WorldWideScience

Sample records for film deposition processes

  1. ZnS thin film deposited with chemical bath deposition process directed by different stirring speeds

    Science.gov (United States)

    Zhang, Y.; Dang, X. Y.; Jin, J.; Yu, T.; Li, B. Z.; He, Q.; Li, F. Y.; Sun, Y.

    2010-09-01

    In this combined film thickness, scanning electron microscopy (SEM), X-ray diffraction and optical properties study, we explore the effects of different stirring speeds on the growth and optical properties of ZnS film deposited by CBD method. From the disclosed changes of thickness of ZnS film, we conclude that film thickness is independent of the stirring speeds in the heterogeneous process (deposition time less than 40 min), but increases with the stirring speeds and/or deposition time increasing in the homogeneous process. Grazing incident X-ray diffraction (GIXRD) and the study of optical properties disclosed that the ZnS films grown with different stirring speeds show partially crystallized film and exhibit good transmittance (70-88% in the visible region), but the stirring speeds cannot give much effects on the structure and optical properties in the homogeneous process.

  2. Reaction network analysis for thin film deposition processes

    Science.gov (United States)

    Ramakrishnasubramanian, Krishnaprasath

    Understanding the growth of thin films produced by Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) has been one of the most important challenge for surface chemists over the last two to three decades. There has been a lack of complete understanding of the surface chemistry behind these systems due to the dearth of experimental reaction kinetics data available. The data that do exist are generally derived through quantum computations. Thus, it becomes ever so important to develop a deposition model which not only predicts the bulk film chemistry but also explains its self-limiting nature and growth surface stability without the use of reaction rate data. The reaction network analysis tools developed in this thesis are based on a reaction factorization approach that aims to decouple the reaction rates by accounting for the chemical species surface balance dynamic equations. This process eliminates the redundant dynamic modes and identifies conserved modes as reaction invariants. The analysis of these invariants is carried out using a Species-Reaction (S-R) graph approach which also serves to simplify the representation of the complex reaction network. The S-R graph is self explanatory and consistent for all systems. The invariants can be easily extracted from the S-R graph by following a set of straightforward rules and this is demonstrated for the CVD of gallium nitride and the ALD of gallium arsenide. We propose that understanding invariants through these S-R graphs not only provides us with the physical significance of conserved modes but also give us a better insight into the deposition mechanism.

  3. Atomistic study of deposition process of Al thin film on Cu substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yongzhi, E-mail: yzcaohit@gmail.com [Center for Precision Engineering, Harbin Institute of Technology, Harbin (China); Zhang Junjie; Sun Tao; Yan Yongda; Yu Fuli [Center for Precision Engineering, Harbin Institute of Technology, Harbin (China)

    2010-08-01

    In this paper we report molecular dynamics based atomistic simulations of deposition process of Al atoms onto Cu substrate and following nanoindentation process on that nanostructured material. Effects of incident energy on the morphology of deposited thin film and mechanical property of this nanostructured material are emphasized. The results reveal that the morphology of growing film is layer-by-layer-like at incident energy of 0.1-10 eV. The epitaxy mode of film growth is observed at incident energy below 1 eV, but film-mixing mode commences when incident energy increase to 10 eV accompanying with increased disorder of film structure, which improves quality of deposited thin film. Following indentation studies indicate deposited thin films pose lower stiffness than single crystal Al due to considerable amount of defects existed in them, but Cu substrate is strengthened by the interface generated from lattice mismatch between deposited Al thin film and Cu substrate.

  4. Influence of process parameters on the preparation of pharmaceutical films by electrostatic powder deposition.

    Science.gov (United States)

    Prasad, Leena Kumari; LaFountaine, Justin S; Keen, Justin M; Williams, Robert O; McGinity, James W

    2016-12-30

    Electrostatic powder deposition (ESPD) has been developed as a solvent-free method to prepare pharmaceutical films. The aim of this work was to investigate the influence of process parameters during (1) electrostatic powder deposition, (2) curing, and (3) removal of the film from the substrate on the properties of the film. Polyethylene oxide (PEO) was used as the model polymer and stainless steel 316 as the substrate. Deposition efficiency (i.e. deposited weight) was measured with varying charging voltage, gun tip to substrate distance, and environmental humidity. Scanning electron microscopy was utilized to assess film formation, and adhesive and mechanical strength of films were measured with varying cure temperature and time. Adhesive strength was measured for films prepared on substrates of varying surface roughness. When deposition was performed at low humidity conditions, 25%RH, process parameters did not significantly affect deposition behavior. At 40%RH, increasing deposition efficiency with decreasing gun tip to substrate distance and increasing voltage (up to 60kV) was observed. Complete film formation was seen by 30min at 80°C, compared to lower curing temperatures and times. All films were readily removed from the substrates. The results show the ESPD process can be modified to produce films with good mechanical properties (e.g. tensile strength>0.06MPa), suggesting it is a promising dry powder process for preparing pharmaceutical films.

  5. Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C., E-mail: carsten.bundesmann@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Feder, R. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Wunderlich, R.; Teschner, U.; Grundmann, M. [Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig (Germany); Neumann, H. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany)

    2015-08-31

    Several sets of Ge films were grown by ion beam sputter deposition under systematic variation of ion beam parameters (ion species and ion energy) and geometrical parameters (ion incidence angle and polar emission angle). The films were characterized concerning thickness, growth rate, mass density, structural properties and composition. The film thicknesses show a cosine-like angular distribution, and the growth rates were found to increase with increasing ion incidence angle and ion energy. All films are amorphous and the average mass density was found to be (4.3 ± 0.2) g/cm{sup 3}, without a systematic relation to ion energy and geometrical parameters. Slightly higher mass densities were found for Ge films grown by sputtering with Xe than for sputtering with Ar. The Ge films contain a fraction of inert gas atoms from backscattered primary particles. This fraction is found to be higher for sputtering with Ar than for sputtering with Xe. The fraction of inert gas atoms increases with increasing polar emission angle and increasing ion incidence angle. Raman scattering experiments revealed also systematic shifts of the characteristic Raman mode. The shifts are tentatively assigned to the change of the Ge particle densities caused by the incorporation of inert gas particles. There seem to be also slight changes in short range ordering. The experimental data are discussed with respect to the known energy and angular distributions of the sputtered and backscattered particles. - Highlights: • Ion beam sputter deposition under systematic variation of process parameters • Thickness, growth rate, mass density, composition, structure, phonon properties • All germanium films are amorphous with small variations in mass density. • Incorporation of considerable amount of inert process gas • Vibrational properties correlate with composition.

  6. Investigation of Tin (Sn) Film Using an Aerosol Jet Additive Manufacturing Deposition Process

    Science.gov (United States)

    Fortier, Aleksandra; Liu, Yue; Ghamarian, Iman; Collins, Peter C.; Chason, Eric

    2017-08-01

    The quality of a Sn film deposited by the aerosol process is compared against the quality of Sn films deposited with traditional electroplating. Using the aerosol additive deposition technique, a Sn film was deposited on a brass substrate and exposed to room (25°C) temperature environments for 30 days, followed by a laser photosintering process. The film characteristics and content, formation of intermetallic compounds, residual stress distribution, grain texture, and the tendency of the film to grow Sn whiskers were analyzed. The preliminary results show a successful deposition of Sn film with an aerosol jet process and tensile residual stresses, whereas it was compressive in nature for electroplated Sn film. X-ray diffraction results also show the absence of intermetallic compound (IMC) formation in the aerosol jet-deposited film, while electroplated Sn film has a significant presence of IMC. The aerosol jet-deposited Sn film has the potential to resist nucleation of Sn whiskers under the operating conditions used in this study.

  7. Rare earth-doped alumina thin films deposited by liquid source CVD processes

    Energy Technology Data Exchange (ETDEWEB)

    Deschanvres, J.L.; Meffre, W.; Joubert, J.C.; Senateur, J.P. [Ecole Nat. Superieure de Phys. de Grenoble, St. Martin d`Heres (France). Lab. des Materiaux et du Genie Phys.; Robaut, F. [Consortium des Moyens Technologiques Communs, Institut National Polytechnique de Grenoble, BP 75, 38402 St Martin d`Heres (France); Broquin, J.E.; Rimet, R. [Laboratoire d`Electromagnetisme, Microondes et Optoelectronique, CNRS-Ecole Nationale Superieure d`Electronique et Radioelectricite de Grenoble, BP 257, 38016 Grenoble, Cedex (France)

    1998-07-24

    Two types of liquid-source CVD processes are proposed for the growth of rare earth-doped alumina thin films suitable as amplifying media for integrated optic applications. Amorphous, transparent, pure and erbium- or neodymium-doped alumina films were deposited between 573 and 833 K by atmospheric pressure aerosol CVD. The rare earth doping concentration increases by decreasing the deposition temperature. The refractive index of the alumina films increases as a function of the deposition temperature from 1.53 at 573 K to 1.61 at 813 K. Neodymium-doped films were also obtained at low pressure by liquid source injection CVD. (orig.) 7 refs.

  8. UV optical properties of thin film oxide layers deposited by different processes.

    Science.gov (United States)

    Pellicori, Samuel F; Martinez, Carol L

    2011-10-01

    UV optical properties of thin film layers of compound and mixed oxide materials deposited by different processes are presented. Japan Electron Optics Laboratory plasma ion assisted deposition (JEOL PIAD), electron beam with and without IAD, and pulsed DC magnetron sputtering were used. Comparisons are made with published deposition process data. Refractive indices and absorption values to as short as 145 nm were measured by spectroscopic ellipsometry (SE). Electronic interband defect states are detected that are deposition-process dependent. SE might be effective in identifying UV optical film quality, especially in defining processes and material composition beneficial for high-energy excimer laser applications and environments requiring stable optical properties.

  9. The adsorptive-kinetic model of in-situ phosphorus doped film polysilicon deposition process

    Directory of Open Access Journals (Sweden)

    Nalivaiko O. Yu.

    2009-11-01

    Full Text Available The investigation of deposition kinetics of in-situ phosphorus doped polysilicon films has been performed. The adsorptive-kinetic model of in-situ phosphorus doped polysilicon deposition has been developed. The values of heterogeneous reaction constants and constants, which describe the desorption process for monosilane and phosphine, have been defined. The optimal process conditions, which provide the acceptable deposition rate, thickness uniformity, high doping level and conformal step coverage, have been founded.

  10. Atomic layer deposition of copper and copper silver films using an electrochemical process

    Energy Technology Data Exchange (ETDEWEB)

    Fang, J.S., E-mail: jsfang@nfu.edu.tw [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Liu, Y.S. [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Chin, T.S. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

    2015-04-01

    This paper describes the formation and properties of Cu and Cu(Ag) films on a Ru/Si substrate using electrochemical atomic layer deposition. The process was performed layer-by-layer using underpotential deposition (UPD) and surface-limited redox reactions. The first Cu atomic layer was deposited on the Ru/Si substrate via UPD. Using UPD, atomic layered of Pb, which acts as a sacrificial layer, was applied on the Cu layer. Then, a Cu{sup 2+} solution was flushed into the cell at an open-circuit potential, and the Pb layer was exchanged for Cu via redox replacements. The above sequences were repeated 500 times to form a Cu film. The Cu(Ag) alloy films were formed using Cu–UPD and Ag–UPD in predetermined sequences. The lowest electrical resistivity achieved was 3.6 and 2.2 μΩ cm for the Cu film and Cu(Ag) film, respectively, after annealing at 400 °C. Due to the self-limiting reactions, the process has the ability to deposit atomic layers to meet the requirement of Cu interconnects. - Highlights: • Layer-by-layer growth of Cu and Cu(Ag) films are prepared using electrochemical atomic layer deposition. • Cu coverage is from 0.33 to 0.51 ML for each deposition cycle in different NaCl concentrations. • The process can be applied in Cu interconnections.

  11. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  12. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  13. Fabrication of FeSe superconducting films with chemical transport deposition process

    Science.gov (United States)

    Feng, J. Q.; Zhang, S. N.; Liu, J. X.; Hao, Q. B.; Li, C. S.; Zhang, P. X.

    2017-07-01

    FeSe Superconducting films were fabricated with a chemical transport deposition process. During the fabrication process, Fe foils were adopted as substrates and Se powders were put at one end of the tube furnace. During the heating process, Se powders were vaporized, and vaporized atoms were carried by Ar flow and deposited on the Fe substrates. With a heat treatment process under proper temperature, superconducting tetragonal β-FeSe phase can be obtained. The effects of key parameters, including the sintering temperatures and the distances between Fe substrates and Se source on the phase composition and morphology of the obtained films were systematically investigated. The superconducting transition temperature of 7.8 K was obtained on the optimized film. By further optimization of the heat treatment process, it is promising to fabricate FeSe films with higher superconducting phase content and better superconducting properties.

  14. Growth process conditions of tungsten oxide thin films using hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Houweling, Z. Silvester, E-mail: Z.S.Houweling@uu.nl [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CB Utrecht (Netherlands); Geus, John W. [Electron Microscopy, Utrecht University, Padualaan 8, 3584 CH Utrecht (Netherlands); Jong, Michiel de; Harks, Peter-Paul R.M.L.; Werf, Karine H.M. van der; Schropp, Ruud E.I. [Nanophotonics - Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, Princetonlaan 4, 3584 CB Utrecht (Netherlands)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer Process parameters to control hot-wire CVD of WO{sub 3-x} are categorized. Black-Right-Pointing-Pointer Growth time, oxygen partial pressure, filament and substrate temperature are varied. Black-Right-Pointing-Pointer Chemical and crystal structure, optical bandgap and morphology are determined. Black-Right-Pointing-Pointer Oxygen partial pressure determines the deposition rate up to as high as 36 {mu}m min{sup -1}. Black-Right-Pointing-Pointer Nanostructures, viz. wires, crystallites and closed crystallite films, are controllably deposited. - Abstract: We report the growth conditions of nanostructured tungsten oxide (WO{sub 3-x}) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was varied from 6.0 Multiplication-Sign 10{sup -6} to 1.0 mbar and the current through the filaments was varied from 4.0 to 9.0 A, which constitutes a filament temperature of 1390-2340 Degree-Sign C in vacuum. It is observed that the deposition rate of the films is predominantly determined by the oxygen partial pressure; it changes from about 1 to about 36,000 nm min{sup -1} in the investigated range. Regardless of the oxygen partial pressure and filament temperature used, thin films with a nanogranular morphology are obtained, provided that the depositions last for 30 min or shorter. The films consist either of amorphous or partially crystallized WO{sub 3-x} with high averaged transparencies of over 70% and an indirect optical band gap of 3.3 {+-} 0.1 eV. A prolonged deposition time entails an extended exposure of the films to thermal radiation from the filaments, which causes crystallization to monoclinic WO{sub 3} with diffraction maxima due to the (0 0 2), (2 0 0) and (0 2 0) crystallographic planes, furthermore the nanograins sinter and the films exhibit a cone

  15. Biomimetic formation of titania thin films: effect of amino acids on the deposition process.

    Science.gov (United States)

    Durupthy, Olivier; Jeurgens, Lars P H; Bill, Joachim

    2011-05-01

    Different types of amino acids have been used as additives to control the aqueous deposition of titanium dioxide thin films on single-crystal Si wafers. Thin titania films can be obtained through a chemical bath deposition (CBD) process using TiCl₄ as a precursor in an aqueous solution at temperatures below 100 °C. The addition of amino acids to the deposition solution was shown to reduce the thickness and roughness of the films and to increase their density. These protein building blocks were employed to modify the deposition rate as well as the size of aggregates that form the film. The thickness, crystallinity, morphology and composition of the grown films were characterized by a variety of techniques, including XRD, XPS, AFM and SEM. The consequences of the type of the amino acid additive (and its concentration in the solution) on the microstructural evolutions of the deposed films are thus revealed and discussed on the basis of the organic-inorganic interactions in solution and at the film surface.

  16. Molecular dynamics simulation of the deposition process of hydrogenated diamond-like carbon (DLC) films

    Institute of Scientific and Technical Information of China (English)

    ZHANG YuJun; DONG GuangNeng; MAO JunHong; XIE YouBai

    2008-01-01

    The deposition process of hydrogenated diamond-like carbon (DLC) film greatly affects its frictional properties. In this study, CH3 radicals are selected as source species to deposit hydrogenated DLC films for molecular dynamics simulation. The growth and structural properties of hydrogenated DLC films are investigated and elucidated in detail. By comparison and statistical analysis, the authors find that the ratio of carbon to hydrogen in the films generally shows a monotonously increasing trend with the increase of impact energy. Carbon atoms are more reactive during deposition and more liable to bond with substrate atoms than hydrogen atoms. In addition, there exists a peak value of the number of hydrogen atoms deposited in hydrogenated DLC films. The trends of the variation are opposite on the two sides of this peak point, and itbecomes stable when impact energy is greater than 80 eV. The average relative density also indicates a rising trend along with the increment of impact energy, while it does not reach the saturation value until impact energy comes to 50 eV. The hydrogen content in source species is a key factor to determine the hydrogen content in hydrogenated DLC films. When the hydrogen content in source species is high, the hydrogen content in hydrogenated DLC films is accordingly high.

  17. Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO)transparent thin films deposited by pulsed laser deposition process

    Institute of Scientific and Technical Information of China (English)

    Jin-Hyum SHIN; Dong-Kyun SHIN; Hee-Young LEE; Jai-Yeoul LEE

    2011-01-01

    Multilayer gallium and aluminum doped ZnO (GZO/AZO) films were fabricated by alternative deposition of Ga-doped zinc oxide(GZO) and Al-doped zinc oxide(AZO) thin film by using pulsed laser deposition(PLD) process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO GZO/AZO thin films linearly decreases with increasing the Al ratio.

  18. Oxidation of ZnO thin films during pulsed laser deposition process

    Indian Academy of Sciences (India)

    E De Posada; L Moreira; J Pérez De La Cruz; M Arronte; L V Ponce; T Flores; J G Lunney

    2013-06-01

    Pulsed laser deposition of ZnO thin films, using KrF laser, is analysed. The films were deposited on (001) sapphire substrates at 400 °C, at two different oxygen pressures (0.3 and 0.4 mbar) and two different target–substrate distances (30 and 40 mm). It is observed that in order to obtain good quality in the photoluminescence of the films, associated with oxygen stoichiometry, it is needed to maximize the time during which the plasma remains in contact with the growing film (plasma residence time), which is achieved by selecting suitable combinations of oxygen pressures and target to substrate distances. It is also discussed that for the growth parameters used, the higher probability for ZnO films growth results from the oxidation of Zn deposited on the substrate and such process takes place during the time that the plasma is in contact with the substrate. Moreover, it is observed that maximizing the plasma residence time over the growing film reduces the rate of material deposition, favouring the surface diffusion of adatoms, which favours both Zn–O reaction and grain growth.

  19. Plasma polymers deposited in atmospheric pressure dielectric barrier discharges: Influence of process parameters on film properties

    Energy Technology Data Exchange (ETDEWEB)

    Fricke, Katja, E-mail: k.fricke@inp-greifswald.de [Leibniz Institute for Plasma Science and Technology e.V. (INP Greifswald), Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Girard-Lauriault, Pierre-Luc [Plasma Processing Laboratory, Department of Chemical Engineering, McGill University, 3610 rue University, Montreal, QC H3A 0C5 (Canada); Weltmann, Klaus-Dieter [Leibniz Institute for Plasma Science and Technology e.V. (INP Greifswald), Felix-Hausdorff-Str. 2, 17489 Greifswald (Germany); Wertheimer, Michael R. [Department of Engineering Physics, École Polytechnique de Montréal, Box 6079, Station Centre-Ville, Montreal, QC H3C 3A7 (Canada)

    2016-03-31

    We present results on the deposition of plasma polymer (PP) films in a dielectric barrier discharge system fed with mixtures of argon or nitrogen carrier gas plus different hydrocarbon precursors, where the latter possess different carbon-to-hydrogen ratios: CH{sub 4} < C{sub 2}H{sub 6} < C{sub 2}H{sub 4} = C{sub 3}H{sub 6} < C{sub 2}H{sub 2}. The influence of precursor gas mixture and flow rate, excitation frequency, and absorbed power on PP film compositions and properties has been investigated. The discharge was characterized by electrical measurements, while the chemical compositions and structures of coatings were analysed by X-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, total combustion, and elastic recoil detection analyses, the latter two for determining carbon-to-hydrogen ratios. Scanning electron microscopy was used to study the coatings' morphology, and profilometry for evaluating deposition rates. - Highlights: • Atmospheric pressure DBD is used to deposit organic hydrocarbon films. • High deposition rates can be achieved by varying the power and/or gas mixture ratio. • Process parameters affect the films' surface chemical composition and morphology. • Deposited films are not soluble in aqueous environment. • No delamination of coatings produced from argon plasma.

  20. Influence of as-deposited conductive type on sensitization process of PbSe films

    Science.gov (United States)

    Yang, Hao; Chen, Lei; Zheng, Jianbang; Qiao, Kai; Li, Xiaojiang

    2016-07-01

    The as-grown n- and p-type polycrystalline PbSe thin films are fabricated by vapor phase deposition using substrate temperature regulation. The surface polycrystalline structures and photoelectric properties of n- and p-type polycrystalline PbSe films are provided. Surface composition of n-type-sensitized PbSe film has been analyzed according to X-ray photoelectron spectroscopy results. The oxygen roles in n- and p-type PbSe polycrystalline films during the sensitization process are studied experimentally, respectively. The dependence of sensitized photoelectric performance on the initial conductive state has been firstly observed and discussed, as we know presently. It is revealed that oxygen can trigger photo-response in the sensitization process for n-type PbSe film, but not for p-type. These discussions may be useful for understanding the sensitization mechanism of lead salt materials.

  1. Reactive Ar ion beam sputter deposition of TiO{sub 2} films: Influence of process parameters on film properties

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C., E-mail: carsten.bundesmann@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Lautenschläger, T.; Thelander, E. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Spemann, D. [Leibniz-Institut für Oberflächenmodifizierung e.V., Permoserstrasse 15, 04318 Leipzig (Germany); Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, 04103 Leipzig (Germany)

    2017-03-15

    Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Thickness, growth rate, structure, mass density, composition, optical properties. • All TiO{sub 2} films are amorphous with systematic variations in mass density. • Considerable amount of inert process gas correlated with scattering angle. • Correlation of mass density and index of refraction. - Abstract: Several sets of TiO{sub 2} films were grown by Ar ion beam sputter deposition under systematic variation of ion energy and geometrical parameters (ion incidence angle and polar emission angle). The films were characterized concerning thickness, growth rate, structural properties, composition, mass density, and optical properties. The film thicknesses show a cosine-like angular distribution, and the growth rates were found to increase with increasing ion incidence angle and ion energy. All films are amorphous and stoichiometric, but can contain a considerable amount of backscattered primary particles. The atomic fraction of Ar particles decreases systematically with increasing scattering angle, independent from ion energy and ion incidence angle. Mass density and index of refraction show similar systematic variations with ion energy and geometrical parameters. The film properties are mainly influenced by the scattering geometry, and only slightly by ion energy and ion incidence angle. The variations in the film properties are tentatively assigned to changes in the angular and energy distribution of the sputtered target particles and back-scattered primary particles.

  2. Tuning polymorphism and orientation in organic semiconductor thin films via post-deposition processing.

    Science.gov (United States)

    Hiszpanski, Anna M; Baur, Robin M; Kim, Bumjung; Tremblay, Noah J; Nuckolls, Colin; Woll, Arthur R; Loo, Yueh-Lin

    2014-11-05

    Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate chemistry. Here we demonstrate independent tuning of the crystalline polymorph and molecular orientation in thin films of contorted hexabenzocoronene, c-HBC, during post-deposition processing without the need to adjust deposition conditions. Three polymorphs are observed, two of which have not been previously reported. Using our ability to independently tune the crystal structure and out-of-plane molecular orientation in thin films of c-HBC, we have decoupled and evaluated the effects that molecular packing and orientation have on device performance in thin-film transistors (TFTs). In the case of TFTs comprising c-HBC, polymorphism and molecular orientation are equally important; independently changing either one affects the field-effect mobility by an order of magnitude.

  3. Deposition and post-processing techniques for transparent conductive films

    Energy Technology Data Exchange (ETDEWEB)

    Christoforo, Mark Greyson; Mehra, Saahil; Salleo, Alberto; Peumans, Peter

    2017-07-04

    In one embodiment, a method is provided for fabrication of a semitransparent conductive mesh. A first solution having conductive nanowires suspended therein and a second solution having nanoparticles suspended therein are sprayed toward a substrate, the spraying forming a mist. The mist is processed, while on the substrate, to provide a semitransparent conductive material in the form of a mesh having the conductive nanowires and nanoparticles. The nanoparticles are configured and arranged to direct light passing through the mesh. Connections between the nanowires provide conductivity through the mesh.

  4. Effect of Processing Parameters on Performance of Spray-Deposited Organic Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Jack W. Owen

    2011-01-01

    Full Text Available The performance of organic thin-film transistors (OTFTs is often strongly dependent on the fabrication procedure. In this study, we fabricate OTFTs of soluble small-molecule organic semiconductors by spray-deposition and explore the effect of processing parameters on film morphology and device mobility. In particular, we report on the effect of the nature of solvent, the pressure of the carrier gas used in deposition, and the spraying distance. We investigate the surface morphology using scanning force microscopy and show that the molecules pack along the π-stacking direction, which is the preferred charge transport direction. Our results demonstrate that we can tune the field-effect mobility of spray-deposited devices two orders of magnitude, from 10−3 cm2/Vs to 10−1 cm2/Vs, by controlling fabrication parameters.

  5. Studies on Nanostructure Aluminium Thin Film Coatings Deposited using DC magnetron Sputtering Process

    Science.gov (United States)

    Singh M, Muralidhar; G, Vijaya; MS, Krupashankara; Sridhara, B. K.; Shridhar, T. N.

    2016-09-01

    Nanostructured thin film metallic coatings has become an area of intense research particularly in applications related solar, sensor technologies and many other optical applications such as laser windows, mirrors and reflectors. Thin film metallic coatings were deposited using DC magnetron sputtering process. The deposition rate was varied to study its influence on optical behavior of Aluminum thin films at a different argon flow rate. Studies on the optical response of these nanostructure thin film coatings were characterized using UV-VIS-NIR spectrophotometer with integrating sphere in the wavelength range of (250-2500nm) and Surface morphology were carried out using atomic force microscope with roughness ranging from 2 to 20nm and thickness was measured using Dektak measuring instrument. The reflection behavior of aluminium coatings on polycarbonate substrates has been evaluated. UV-VIS-NIR Spectrophotometer analysis indicates higher reflectance of 96% for all the films in the wavelength range of 250 nm to 2500 nm. Nano indentation study revealed that there was a considerable change in hardness values of the films prepared at different conditions.

  6. Study on the effect of film formation process and deposition rate on the orientation of the CsI:Tl thin film

    Science.gov (United States)

    Tan, Xiaochuan; Liu, Shuang; Xie, Yijun; Guo, Lina; Ma, Shijun; Wang, Tianyu; Liu, Yong; Zhong, Zhiyong

    2017-10-01

    Although many new scintillation materials are developed, CsI:Tl is still prevailing because of its high scintillation efficiency. In this work, CsI:Tl thin films were fabricated by vacuum thermal evaporative deposition method and their morphology properties and growth orientation were observed by SEM and XRD. Photoluminescent spectra were used to measure the luminescent properties of the CsI:Tl thin film. The results show us the film formation process of CsI:Tl thin film and analyze the effect of film formation process and the deposition rate on the orientation of the CsI:Tl thin film.

  7. Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Seguini, G.; Cianci, E.; Wiemer, C.; Perego, M. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza MB (Italy); Saynova, D.; Van Roosmalen, J.A.M. [ECN Solar Energy, Westerduinweg 3, NL-1755 ZG Petten (Netherlands)

    2013-04-05

    High-quality surface passivation of crystalline Si is achieved using 10 nm thick Al2O3 films fabricated by thermal atomic layer deposition at 100C. After a 5 min post deposition annealing at 200C, the effective carrier lifetime is 1 ms, indicating a functional level of surface passivation. The interplay between the chemical and the field effect passivation is investigated monitoring the density of interface traps and the amount of fixed charges with conductance-voltage and capacitance-voltage techniques. The physical mechanisms underlying the surface passivation are described. The combination of low processing temperatures, thin layers, and good passivation properties facilitate a technology for low-temperature solar cells.

  8. Deposition of calcium carbonate films by a polymer-induced liquid-precursor (PILP) process

    Science.gov (United States)

    Gower, Laurie B.; Odom, Damian J.

    2000-03-01

    A polypeptide additive has been used to transform the solution crystallization of calcium carbonate to a solidification process of a liquid-phase mineral precursor. In situ observations reveal that polyaspartate induces liquid-liquid phase separation of droplets of a mineral precursor. The droplets deposit on the substrate and coalesce to form a coating, which then solidifies into calcitic tablets and films. Transition bars form during the amorphous to crystalline transition, leading to sectorization of calcite tablets, and the defect textures and crystal morphologies are atypical of solution grown crystals. The formation of nonequilibrium crystal morphologies using an acidic polypeptide may have implications in the field of biomineralization, and the environmentally friendly aspects of this polymer-induced liquid-precursor (PILP) process may offer new techniques for aqueous-based processing of ceramic films, coatings, and particulates.

  9. Simulation of polyatomic discharges for thin film deposition processes in low-pressure plasma reactors

    Science.gov (United States)

    Bera, Kallol

    Comprehensive multi-dimensional self-consistent numerical fluid models for radio-frequency capacitively and inductively coupled methane discharges were developed to predict diamond-like-carbon thin film deposition/etching rate on the wafer. A numerical model of glow discharge provides insight on the physical phenomena in the discharge leading to better understanding and design of the reactor. The developed discharge models included detailed discharge physics, gas-phase chemistry and surface chemistry modeling. To understand the basic discharge phenomena, one- dimensional radio frequency capacitively coupled Ar plasma was simulated using a fluid model. The model was modified for methane plasma to predict the profiles of the plasma variables. The model was then extended to two- dimensional cylindrical coordinates to capture the effects of asymmetry of the reactor on the plasma variables. The necessary dc bias for the discharge was predicted such that the cycle-averaged current to the powered electrode was zero. A discharge chemistry model was also developed to predict various radical and neutral densities in the plasma, and their fluxes to the cathode. The species fluxes are used to predict film deposition rate and the properties of the deposited film. The model predictions of plasma density, self-generated de bias, cathode current and plasma potential compared well with the experimental results. A high density plasma with inductive coupling at low pressure was also considered. Separate rf bias and dc bias are applied to the substrate holder to modulate the ion energy. The present model simulates electron, ion and neutral transport, including detailed discharge and surface chemistry. The model has been implemented for methane discharge to obtain deposition/etching of thin carbon film on the wafer. To the author's knowledge, this is the first attempt to simulate capacitively and inductively coupled plasmas self-consistently for a depositing gas under the operating

  10. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  11. Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Talagrand, C., E-mail: talagrand@emse.fr [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Boddaert, X. [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Selmeczi, D.G.; Defranoux, C. [Semilab Semiconductor Physics Laboratory Co. Ltd., Budapest, 1117 (Hungary); Collot, P. [Ecole Nationale Supérieure d' Arts et Métiers ParisTech, Aix-en-Provence, 2 cours des Arts et Métiers (France)

    2015-09-01

    This paper reports on an InGaZnO optical study by spectrometric ellipsometry. First of all, the fitting results of different models and different structures are analysed to choose the most appropriate model. The Tauc–Lorentz model is suitable for thickness measurements but a more complex model allows the refractive index and extinction coefficient to be extracted more accurately. Secondly, different InGaZnO process depositions are carried out in order to investigate stability, influence of deposition time and uniformity. Films present satisfactory optical stability over time. InGaZnO optical property evolution as a function of deposition time is related to an increase in temperature. To understand the behaviour of uniformity, mapping measurements are correlated to thin film resistivity. Results show that temperature and resputtering are the two phenomena that affect IGZO uniformity. - Highlights: • Model and structure are investigated to fit IGZO ellipsometric angles. • Maximum refractive index rises with substrate temperature and thus deposition time. • Resputtering leads to inhomogeneity in IGZO electrical and optical properties.

  12. Synthesis of Ag-doped hydrogenated carbon thin films by a hybrid PVD–PECVD deposition process

    Indian Academy of Sciences (India)

    Majji Venkatesh; Sukru Taktak; Efstathios I Meletis

    2014-12-01

    Silver-doped hydrogenated amorphous carbon (Ag-DLC) films were deposited on Si substrates using a hybrid plasma vapour deposition–plasma enhanced chemical vapour deposition (PVD–PECVD) process combining Ag target magnetron sputtering and PECVD in an Ar–CH4 plasma. Processing parameters (working pressure, CH4/Ar ratio and magnetron current) were varied to obtain good deposition rate and a wide variety of Ag films. Structure and bonding environment of the films were obtained from transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy studies. Variation of processing parameters was found to produce Ag-doped amorphous carbon or diamond-like carbon (DLC) films with a range of characteristics with CH4/Ar ratio exercising a dominant effect. It was pointed out that Ag concentration and deposition rate of the film increased with the increase in d.c. magnetron current. At higher Ar concentration in plasma, Ag content increased whereas deposition rate of the film decreased. FTIR study showed that the films contained a significant amount of hydrogen and, as a result of an increase in the Ag content in the hydrogenated DLC film, $sp^{2}$ bond content also increased. The TEM cross sectional studies revealed that crystalline Ag particles were formed with a size in the range of 2–4 nm throughout an amorphous DLC matrix.

  13. High deposition rate processes for the fabrication of microcrystalline silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Michard, S. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Meier, M., E-mail: ma.meier@fz-juelich.de [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Grootoonk, B.; Astakhov, O.; Gordijn, A.; Finger, F. [Institute of Energy and Climate Research 5 - Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany)

    2013-05-15

    The increase of deposition rate of microcrystalline silicon absorber layers is an essential point for cost reduction in the mass production of thin-film silicon solar cells. In this work we explored a broad range of plasma enhanced chemical vapor deposition (PECVD) parameters in order to increase the deposition rate of intrinsic microcrystalline silicon layers keeping the industrial relevant material quality standards. We combined plasma excitation frequencies in the VHF band with the high pressure high power depletion regime using new deposition facilities and achieved deposition rates as high as 2.8 nm/s. The material quality evaluated from photosensitivity and electron spin resonance measurements is similar to standard microcrystalline silicon deposited at low growth rates. The influence of the deposition power and the deposition pressure on the electrical and structural film properties was investigated.

  14. Laser-processing of VO2 thin films synthesized by polymer-assisted-deposition

    Science.gov (United States)

    Breckenfeld, Eric; Kim, Heungsoo; Gorzkowski, Edward P.; Sutto, Thomas E.; Piqué, Alberto

    2017-03-01

    We investigate a novel route for synthesis and laser-sintering of VO2 thin films via solution-based polymer-assisted-deposition (PAD). By replacing the traditional solvent for PAD (water) with propylene glycol, we are able to control the viscosity and improve the environmental stability of the precursor. The solution stability and ability to control the viscosity makes for an ideal solution to pattern simple or complex shapes via direct-write methods. We demonstrate the potential of our precursor for printing applications by combining PAD with laser induced forward transfer (LIFT). We also demonstrate large-area film synthesis on 4 in. diameter glass wafers. By varying the annealing temperature, we identify the optimal synthesis conditions, obtaining optical transmittance changes of 60% at a 2500 nm wavelength and a two-order-of-magnitude semiconductor-to-metal transition. We go on to demonstrate two routes for improved semiconductor-to-metal characteristics. The first method uses a multi-coating process to produce denser films with large particles. The second method uses a pulsed-UV-laser sintering step in films annealed at low temperatures (<450° C) to promote particle growth and improve the semiconductor-to-metal transition. By comparing the hysteresis width and semiconductor-to-metal transition magnitude in these samples, we demonstrate that both methods yield high quality VO2 with a three-order-of-magnitude transition.

  15. A Humidity Sensor Based on Silver Nanoparticles Thin Film Prepared by Electrostatic Spray Deposition Process

    Directory of Open Access Journals (Sweden)

    Thutiyaporn Thiwawong

    2013-01-01

    Full Text Available In this work, thin film of silver nanoparticles for humidity sensor application was deposited by electrostatic spray deposition technique. The influence of the deposition times on properties of films was studied. The crystal structures of sample films, their surface morphology, and optical properties have been investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, and UV-VIS spectrophotometer, respectively. The crystalline structure of silver nanoparticles thin film was found in the orientation of (100 and (200 planes of cubic structure at diffraction angles 2θ  =  38.2° and 44.3°, respectively. Moreover, the silver nanoparticles thin films humidity sensor was fabricated onto the interdigitated electrodes. The sensor exhibited the humidity adsorption and desorption properties. The sensing mechanisms of the device were also elucidated by complex impedance analysis.

  16. Processing and characterization of high temperature superconductor thin films deposited by electron beam co-evaporation

    Science.gov (United States)

    Huh, Jeong-Uk

    Ever since the high temperature superconductors (HTS) were discovered in the late 1980s, there have been enormous efforts to make this into applications such as power transmission cables, transformers, motors and generators. However, many obstacles in performance and high manufacturing cost made this difficult. The first generation HTS wires had low critical current density and were expensive to fabricate. The motivation of this research was to make high performance and low cost second generation HTS coated conductor. Electron beam co-evaporation technique was used to deposit YBCO(YBa2Cu3O7-x ) film at a high rate (10nm/s and higher) on single crystals and metal tapes. The oxygen pressure at the stage of depositing Y, Ba, Cu was 5x10 -5 Torr and the process temperature was 810-840°C. In-situ Fourier Transform Infrared spectroscopy (FTIR) was used to monitor the optical properties of the YBCO during and after deposition. The deposit transformed to a glassy amorphous mixture of Y, Ba and Cu at 3 mTorr of oxygen. YBCO crystallization occurred after extra oxygen was applied to several Torr. FTIR showed almost the same signature during the formation of YBCO and liquid Ba-Cu-O during deposition, which indicates the liquid played an important role in determining the properties of YBCO in terms of providing epitaxy and fast transport of atoms to nucleate on the film-metal interface. The transformation was very rapid---seconds to minutes, compared to minutes to hours for other post-reaction processes. The oxygen partial pressure and the rate of oxidation (supersaturation) in the liquid region defined in the YBCO phase stability diagram determined the electrical and microstructural properties. In-situ X-ray diffraction heating stage with ambient control was utilized to study this supersaturation effect and explore the temperature-pressure space during YBCO growth. With all the information gathered from FTIR and XRD in-situ experiments and also with nano-engineering during

  17. Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process

    Directory of Open Access Journals (Sweden)

    S. N. Heo

    2016-03-01

    Full Text Available We established a process for growing highly ordered MoS2 thin films. The process consists of four steps: MoO3 thermal evaporation, first annealing, sulfurization, and second annealing. The main feature of this process is that thermally deposited MoO3 thin films are employed as a precursor for the MoS2 films. The first deposition step enabled us to achieve precise control of the resulting thickness of the MoS2 films with high uniformity. The crystalline structures, surface morphologies, and chemical states at each step were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Based on these characterizations and a careful optimization of the growth conditions, we successfully produced a highly oriented MoS2 thin film with a thickness of five monolayers over an entire one-centimeter-square sapphire substrate.

  18. Deposition and characterization of La 2Ti 2O 7 thin films via spray pyrolysis process

    Science.gov (United States)

    Todorovsky, D. S.; Todorovska, R. V.; Milanova, M. M.; Kovacheva, D. G.

    2007-03-01

    Thin films of La 2Ti 2O 7 have been deposited on fused silica and Si substrates by a spray pyrolysis method using ethylene glycol solution of La(III)-Ti(IV)-citrate complexes as starting material and O 2 as a carrier gas. The composition, crystal structure and morphology of the films are studied.

  19. Pulsed-laser-deposited YBCO thin films using modified MTG processed targets

    CERN Document Server

    Kim, C H; Kim, I T; Hahn, T S

    1999-01-01

    YBCO thin films were deposited by pulsed laser deposition from targets fabricated using the modified melt-textured growth (MTG) method and the solid-state sintering (SSS) method. All of the films showed c-axis orientations, but the films from the MTG targets had better crystallinity than those from the SSS targets. As the substrate temperature was increased, T sub c and J sub c of the films increased. The films from the MTG targets showed better superconducting properties than those from the SSS targets. From the composition analysis of the targets, the Y-richer vapor species arriving at the substrate from the MTG targets are thought to form a thermodynamically more stable YBCO phase with less cation disorder.

  20. New deposition processes for the growth of oxide and nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Apen, E.A.; Atagi, L.M.; Barbero, R.S.; Espinoza, B.F.; Hubbard, K.M.; Salazar, K.V.; Samuels, J.A.; Smith, D.C. [Los Alamos National Lab., NM (US); Hoffman, D.M. [Univ. of Houston, TX (US)

    1998-11-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe{sub 2}]{sub 4} with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr{sub 3}N{sub 4}, and the thermal CVD of GaN and Al N. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors.

  1. Transformation of cadmium hydroxide to cadmium oxide thin films synthesized by SILAR deposition process: Role of varying deposition cycles

    Directory of Open Access Journals (Sweden)

    A.C. Nwanya

    2016-06-01

    Full Text Available Successive Ionic Layer Adsorption and Reaction (SILAR was used to deposit nanocrystalline cadmium oxide (CdO thin films on microscopic glass substrates for various cycles (40–120. This is based on alternate dipping of the substrate in CdCl2 solution made alkaline (pH ∼12 with NaOH, rinsing with distilled water, followed by air treatment with air dryer and annealing at 300 °C for 1 h in air. The prepared films were characterized by X-ray diffraction (XRD, UV–Visible Spectrophotomer (UV–Vis and Scanning Electron Microscopy (SEM. The 80th cycle was observed to be the saturation stage for this reaction. The XRD results confirmed the films to be CdO with some Cd(OH2 phase at higher deposition cycles. The films were polycrystalline in nature having high orientation along (111 and (200 planes. As the number of cycles increases the calculated average crystallite sizes increase gradually up till the 80th cycle after which a gradual decrease in the crystallite size was observed with increasing number of cycles. The films’ transmittance in the visible and near infrared region decreased as the number of cycles increased and ranged between 25 and 80%. This work shows the feasibility of using simple SILAR method at room temperature to obtain Cd(OH2 films which are transformed to CdO thin films after annealing.

  2. Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Jonghoon [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)]. E-mail: jhoon6@hotmail.com; Ma, James [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Becker, Michael F. [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Keto, John W. [Department of Physics, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Kovar, Desiderio [Department of Mechanical Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2007-06-25

    Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10{sup -2} Pa (4.5 x 10{sup -4} Torr) of 99.9% purity.

  3. Transformation of cadmium hydroxide to cadmium oxide thin films synthesized by SILAR deposition process: Role of varying deposition cycles

    OpenAIRE

    2016-01-01

    Successive Ionic Layer Adsorption and Reaction (SILAR) was used to deposit nanocrystalline cadmium oxide (CdO) thin films on microscopic glass substrates for various cycles (40–120). This is based on alternate dipping of the substrate in CdCl2 solution made alkaline (pH ∼12) with NaOH, rinsing with distilled water, followed by air treatment with air dryer and annealing at 300 °C for 1 h in air. The prepared films were characterized by X-ray diffraction (XRD), UV–Visible Spectrophotomer (UV–Vi...

  4. Comparison of TiO2 and ZrO2 Films Deposited by Electron-Beam Evaporation and by Sol-Gel Process

    Institute of Scientific and Technical Information of China (English)

    YAO Jian-Ke; LI Hai-Yuan; FAN Zheng-Xiu; TANG Yong-Xing; JIN Yun-Xia; ZHAO Yuan-An; HE Hong-Bo; SHAO Jian-Da

    2007-01-01

    TiO2 and ZrO2 films are deposited by electron-beam (EB) evaporation and by sol-gel process. The film properties are characterized by visible and Fourier-transform infrared spectrometry, x-ray diffraction analysis, surface roughness measure, absorption and laser-induced damage threshold (LIDT) test. It is found that the sol-gel films have lower refractive index, packing density and roughness than EB deposited films due to their amorphous structure and high OH group concentration in the film. The high LIDT of sol-gel films is mainly due to their amorphous and porous structure, and low absorption. LIDT of EB deposited film is considerably affected by defects in the film, and LIDT of sol-gel deposited film is mainly effected by residual organic impurities and solvent trapped in the film.

  5. Ion beam sputter deposition of Ag films: Influence of process parameters on electrical and optical properties, and average grain sizes

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, C., E-mail: carsten.bundesmann@iom-leipzig.de; Feder, R.; Gerlach, J.W.; Neumann, H.

    2014-01-31

    Ion beam sputter deposition is used to grow several sets of Ag films under systematic variation of ion beam parameters, such as ion species and ion energy, and geometrical parameters, such as ion incidence angle and polar emission angle. The films are characterized concerning their thickness by profilometry, their electrical properties by 4-point-probe-measurements, their optical properties by spectroscopic ellipsometry, and their average grain sizes by X-ray diffraction. Systematic influences of the growth parameters on film properties are revealed. The film thicknesses show a cosine-like angular distribution. The electrical resistivity increases for all sets with increasing emission angle and is found to be considerably smaller for Ag films grown by sputtering with Xe ions than for the Ag films grown by sputtering with Ar ions. Increasing the ion energy or the ion incidence angle also increases the electrical resistivity. The optical properties, which are the result of free charge carrier absorption, follow the same trends. The observed trends can be partly assigned to changes in the average grain size, which are tentatively attributed to different energetic and angular distributions of the sputtered and back-scattered particles. - Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Film characterization: thickness, electrical, optical and structural properties. • Electrical resistivity changes considerably with ion species and polar emission angle. • Electrical and optical data reveal a strong correlation with grain sizes. • Change of film properties related to changing properties of film-forming particles.

  6. Growth Process Conditions of Tungsten Oxide Thin Films Using Hot-Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Houweling, Z.S.; Geus, J.W.; de Jong, M.; Harks, P.P.R.M.L.; van der Werf, C.H.M.; Schropp, R.E.I.

    2011-01-01

    We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was

  7. Antireflection and downconversion response of Nd3+ doped Y2O3/Si thin film deposited by AACVD process

    Science.gov (United States)

    Elleuch, R.; Salhi, R.; Deschanvres, J.-L.; Maalej, R.

    2014-09-01

    Nd3+:Y2O3 nanograins-like structure films with various Nd concentrations, were deposited on Si (1 0 0) substrates by aerosol assisted chemical vapor deposition (AACVD) process. The intense 900 nm emission of Nd3+ corresponding to the 4F3/2 → 4I9/2 transition was investigated as a function of the annealing temperature. The reflectance percentage of the optimized 5 mol.% Nd:Y2O3 film was recorded at about 16% in 400-1000 nm range. The refractive index (n = 1.94) and the low porosity (P = 2.74%) showed the high transparency of this film. The obtained results demonstrate that this film can enhance the Si solar cell efficiency by light trapping and spectrum shifting.

  8. ZnS Thin Films Deposited by a Spin Successive Ionic Layer Adsorption and Reaction Process

    Energy Technology Data Exchange (ETDEWEB)

    Han, Seungyeol; Lee, D. H.; Ryu, S. O.; Chang, Chih-hung

    2010-05-20

    In this article, we reported a spin successive ionic layer adsorption and reaction (SILAR) method for the first time. ZnS thin films were deposited by spin SILAR using ZnCl2 and Na2S aqueous precursor solutions at room temperature and atmosphere pressure. The optical, structural, and morphological characterizations of the films were studied by scanning electron microscopy, atomic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and UV/visible spectroscopy. Smooth (average roughness <3 nm), uniform, and highly transparent ZnS (transmittance of over 90% in the visible band) thin films could be successfully deposited using this technique with shorter cycle time and much less solvent usage.

  9. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  10. Handbook of thin film deposition processes and techniques principles, methods, equipment and applications

    CERN Document Server

    Seshan, Krishna

    2002-01-01

    New second edition of the popular book on deposition (first edition by Klaus Schruegraf) for engineers, technicians, and plant personnel in the semiconductor and related industries. This book traces the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition techniques and the development of highly specialized equipment to enable this deposition. The book includes much cutting-edge material. Entirely new chapters on contamination and contamination control describe the basics and the issues-as feature sizes shrink to sub-micron dimensions, cleanliness and particle elimination has to keep pace. A new chapter on metrology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and e-beam assisted deposition, MBE, and ion beam methods to bring together a...

  11. Reactive Ar ion beam sputter deposition of TiO2 films: Influence of process parameters on film properties

    Science.gov (United States)

    Bundesmann, C.; Lautenschläger, T.; Thelander, E.; Spemann, D.

    2017-03-01

    Several sets of TiO2 films were grown by Ar ion beam sputter deposition under systematic variation of ion energy and geometrical parameters (ion incidence angle and polar emission angle). The films were characterized concerning thickness, growth rate, structural properties, composition, mass density, and optical properties. The film thicknesses show a cosine-like angular distribution, and the growth rates were found to increase with increasing ion incidence angle and ion energy. All films are amorphous and stoichiometric, but can contain a considerable amount of backscattered primary particles. The atomic fraction of Ar particles decreases systematically with increasing scattering angle, independent from ion energy and ion incidence angle. Mass density and index of refraction show similar systematic variations with ion energy and geometrical parameters. The film properties are mainly influenced by the scattering geometry, and only slightly by ion energy and ion incidence angle. The variations in the film properties are tentatively assigned to changes in the angular and energy distribution of the sputtered target particles and back-scattered primary particles.

  12. Pulsed laser deposition: Prospects for commercial deposition of epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Muenchausen, R.E.

    1999-03-01

    Pulsed laser deposition (PLD) is a physical vapor deposition (PVD) technique for the deposition of thin films. The vapor source is induced by the flash evaporation that occurs when a laser pulse of sufficient intensity (about 100 MW/cm{sup 2}) is absorbed by a target. In this paper the author briefly defines pulsed laser deposition, current applications, research directed at gaining a better understanding of the pulsed laser deposition process, and suggests some future directions to enable commercial applications.

  13. Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing

    CERN Document Server

    He, X M; Peters, A M; Taylor, B; Nastasi, M

    2002-01-01

    Fluorine (F) and boron (B) co-doped diamond-like carbon (FB-DLC) films were prepared on different substrates by the plasma immersion ion processing (PIIP) technique. A pulse glow discharge plasma was used for the PIIP deposition and was produced at a pressure of 1.33 Pa from acetylene (C sub 2 H sub 2), diborane (B sub 2 H sub 6), and hexafluoroethane (C sub 2 F sub 6) gas. Films of FB-DLC were deposited with different chemical compositions by varying the flow ratios of the C sub 2 H sub 2 , B sub 2 H sub 6 , and C sub 2 F sub 6 source gases. The incorporation of B sub 2 H sub 6 and C sub 2 F sub 6 into PIIP deposited DLC resulted in the formation of F-C and B-C hybridized bonding structures. The levels of the F and B concentrations effected the chemical bonding and the physical properties as was evident from the changes observed in density, hardness, stress, friction coefficient, and contact angle of water on films. Compared to B-doped or F-doped DLC films, the F and B co-doping of DLC during PIIP deposition...

  14. Trimethyl(phenylsilane — a precursor for gas phase processes of SiCx:H film deposition: Synthesis and characterization

    Directory of Open Access Journals (Sweden)

    Evgeniya N. Ermakova

    2015-12-01

    Full Text Available The technique of synthesis and purification of trimethyl(phenylsilane PhSiMe3, allowing to obtain the product with high yield. Individuality of the product was confirmed by elemental analysis for C, H, Si was developed. IR, UV and 1H NMR-spectroscopic studies were used to define its spectral characteristics. Complex thermal analysis and thermogravimetry defined thermoanalytical behavior of PhSiMe3 in an inert atmosphere. Tensimetric studies have shown that the compound has sufficient volatility and thermal stability for use as a precursor in the process of chemical vapor deposition (CVD. The composition and temperature limits of the possible crystalline phase complexes in equilibrium with the gas phase of different composition has been determined by method of thermodynamic modeling. Calculated CVD diagrams allow us to select the optimal conditions of film deposition. The possibility of using trimethyl(phenylsilane in CVD processes for producing dielectric films of hydrogenated silicon carbide has been demonstrated.

  15. Electrochemical Behaviour of Sputtering Deposited DLC Films

    Institute of Scientific and Technical Information of China (English)

    LIU Erjia; ZENG A,LIU L X

    2003-01-01

    Diamondlike carbon (DLC) films were deposited via magnetron sputtering process. The energetic ion bombardment on the surface of growing film is one of the major parameters that control the atom mobility on the film surface and further the physical and chemical characteristics of the films. In this study, the energy of carbon ions was monitored by changing sputtering power density, and its effect on the electrochemical performance of the films was investigated. For the deposition at a higher sputtering power density, a higher sp3 content in the DLC films was achieved with denser structure and increased film-substrate adhesion. The impedance at the interface of Si substrate/sulfuric acid solution was significantly enhanced, and at the same time higher film resistance, lower capacitance, higher breakdown potential and longer breakdown time were observed, which were related to the significant sp3 content of the DLC films.

  16. Modeling and simulation of the deposition/relaxation processes of polycrystalline diatomic structures of metallic nitride films

    Science.gov (United States)

    García, M. F.; Restrepo-Parra, E.; Riaño-Rojas, J. C.

    2015-05-01

    This work develops a model that mimics the growth of diatomic, polycrystalline thin films by artificially splitting the growth into deposition and relaxation processes including two stages: (1) a grain-based stochastic method (grains orientation randomly chosen) is considered and by means of the Kinetic Monte Carlo method employing a non-standard version, known as Constant Time Stepping, the deposition is simulated. The adsorption of adatoms is accepted or rejected depending on the neighborhood conditions; furthermore, the desorption process is not included in the simulation and (2) the Monte Carlo method combined with the metropolis algorithm is used to simulate the diffusion. The model was developed by accounting for parameters that determine the morphology of the film, such as the growth temperature, the interacting atomic species, the binding energy and the material crystal structure. The modeled samples exhibited an FCC structure with grain formation with orientations in the family planes of , and . The grain size and film roughness were analyzed. By construction, the grain size decreased, and the roughness increased, as the growth temperature increased. Although, during the growth process of real materials, the deposition and relaxation occurs simultaneously, this method may perhaps be valid to build realistic polycrystalline samples.

  17. Electrochemical characterization of YSZ thick films deposited by dip-coating process

    Science.gov (United States)

    Mauvy, F.; Lenormand, P.; Lalanne, C.; Ansart, F.; Bassat, J. M.; Grenier, J. C.; Groupement de Recherches Cnrs "Pacte", Gdr 2985

    Yttria stabilized zirconia (YSZ, 8% Y 2O 3) thick films were coated on dense alumina substrates by a dip-coating process. The suspension was obtained by addition of a polymeric matrix in a stable suspension of commercial YSZ (Tosoh) powders dispersed in an azeotropic mixture MEK-EtOH. The suspension composition was improved by the addition of YSZ Tosoh particles encapsulated by zirconium alkoxide sol containing yttrium nitrate which are the precursors of the 8-YSZ oxide. This optimal formulation allowed preparing, via a dip-coating process, thick films which were, after thermal treatment, homogeneous, dense and crack-free. A specific method was performed to measure the electrical conductivity, i.e. to determine the ionic conductivity of the film: it uses the four-point probe technique combined with ac impedance spectroscopy. The good agreement between the classical two-electrode measurements performed on YSZ pellets and the four-electrode ones performed on YSZ films allows concluding that this method is relevant for characterizing the transport properties of thick films.

  18. Electrochemical characterization of YSZ thick films deposited by dip-coating process

    Energy Technology Data Exchange (ETDEWEB)

    Mauvy, F.; Lalanne, C.; Bassat, J.M.; Grenier, J.C. [Institut de Chimie de la Matiere Condensee de Bordeaux ICMCB - CNRS, Universite Bordeaux 1, 87, av. du Dr. A. Schweitzer, 33 608 Pessac-Cedex (France); Lenormand, P.; Ansart, F. [Centre Interuniversitaire de Recherche et d' Ingenierie et d' Ingenierie des Materiaux, CIRIMAT, Universite Paul Sabatier, Bat. 2R1, 118 route de Narbonne, 31062 Toulouse Cedex (France)

    2007-09-27

    Yttria stabilized zirconia (YSZ, 8% Y{sub 2}O{sub 3}) thick films were coated on dense alumina substrates by a dip-coating process. The suspension was obtained by addition of a polymeric matrix in a stable suspension of commercial YSZ (Tosoh) powders dispersed in an azeotropic mixture MEK-EtOH. The suspension composition was improved by the addition of YSZ Tosoh particles encapsulated by zirconium alkoxide sol containing yttrium nitrate which are the precursors of the 8-YSZ oxide. This optimal formulation allowed preparing, via a dip-coating process, thick films which were, after thermal treatment, homogeneous, dense and crack-free. A specific method was performed to measure the electrical conductivity, i.e. to determine the ionic conductivity of the film: it uses the four-point probe technique combined with ac impedance spectroscopy. The good agreement between the classical two-electrode measurements performed on YSZ pellets and the four-electrode ones performed on YSZ films allows concluding that this method is relevant for characterizing the transport properties of thick films. (author)

  19. In situ ellipsometric study of the three-stage process in CuInSe{sub 2} film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shirakata, Sho; Takahashi, Toshihiro; Matsunaga, Hiroaki [Faculty of Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama (Japan)

    2013-08-15

    In Situ ellipsometric study has been carried out during the deposition of the CuInSe{sub 2} thin film by means of the three-stage process. A rotator analyzing ellipsomerter using a 632.8 nm He-Ne laser was used. Ellipsometric parameters ({Psi} and {Delta}) and reflectivity R was obtained during the entire deposition stages, in which a complex reflection coefficient is {rho}=tan{Psi} exp(i{Delta}). Cu, In and Se were deposited on the Mo-coated SLG substrate. At the first-stage (In-Se deposition), the In-Se film deposition rate and its reflactive index has been obtained on the basis of the light interference. At the second-stage, changes in both {Psi} and {Delta} are observed. Based on the X-ray diffraction measurement, these changes are related to the stoichiometric composition of the film from In-rich to Cu-rich. This signal was utilized as a process switch from the second-stage to the third-stage. At the third stage, the weak change in {Psi} has been observed showing the change of the stoichiometric composition from the Cu- rich to the In-rich. By means of the in situ ellipsometry-controlled three-stage process, the CuInSe{sub 2} layer with single phase chalcopyrite structure has successfully been prepared, which exhibits an intense near-band-edge photoluminescence at 0.998 eV at room temperature. The preliminary fabricated ZnO/CdS/CuInSe{sub 2} solar cell exhibited a conversion efficiency of 5.6%. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Pulsed laser deposition process of PLZT thin films using an infrared Nd:YAG laser

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, T. [CCADET-UNAM, A.P. 70-186, Mexico D.F., C.P. 04510 (Mexico)]. E-mail: tupacgarcia@yahoo.com; Posada, E. de [IMRE-Physics Faculty, Havana University (Cuba); Bartolo-Perez, P. [CINVESTAV-IPN Unidad, Applied Physics Department, A.P. 73 Cordemex, Merida, Yuc. (Mexico); Programa de Corrosion del Golfo de Mexico, UAC, Compeche (Mexico); Pena, J.L. [CINVESTAV-IPN Unidad, Applied Physics Department, A.P. 73 Cordemex, Merida, Yuc. (Mexico); Diamant, R. [UAM-Unidad Iztapalapa, D.F. (Mexico); Calderon, F. [IMRE-Physics Faculty, Havana University (Cuba); Pelaiz, A. [IMRE-Physics Faculty, Havana University (Cuba)

    2006-03-15

    Pulsed laser depositions of PLZT thin films were performed using an Nd:YAG (1064 nm) laser. The growths took place in vacuum or in an oxygen background. Room temperature and 500 deg. C were the used substrate temperatures. The X-ray diffraction analysis revealed a preferential crystallographic orientation in the films grown at room temperature in vacuum. Such result is discussed. The velocity distribution functions of the species in the plasma plume were obtained from a time of flight study using optical emission spectroscopy. The maximums of these distributions functions fall around 10{sup 6} cm/s, equivalent to an energy range of 18-344 eV. Ionic species of heavy elements (like lead) achieved higher velocities than other lighter species. This result is linked to the creation of an accelerating spatial charge and to the thermal nature of the target material extraction that allows some elements to be released first than others. Chemical state variations of the elements present in the films were analyzed. Under these different growing conditions, lead chemical states varied the most.

  1. Characteristics of Fluorine-doped tin oxide thin films grown by Streaming process for Electrodeless Electrochemical Deposition

    Science.gov (United States)

    Yusuf, Gbadebo; Khalilzadeh-Rezaie, Farnood; Cleary, Justin W.; Oladeji, Isaiah O.; Suu, Koukou; Schoenfeld, Winston V.; Peale, Robert E.; Awodugba, Ayodeji O.

    2015-04-01

    This work investigated the characteristics of SnO2: F films grown by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4 F) was dissolved in a mixture of deionized water and organic solvents. The preheated substrate temperature was varied between 450 and 530° C. High quality SnO2: F films were grown at all the substrate temperatures studied. The typical film thickness was 250 nm. XRD shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength of 400 to 1000 nm. The lowest electrical resistivity achieved was 6 x 10-4 Ω cm. The Hall measurements showed that the film is an n-type semiconductor, with the highest carrier mobility of 8.3 cm2/V.s, and concentration of 1 x 1021 cm-3. The direct band gap was determined to be 4 eV from the transmittance spectrum.

  2. Electrochemical Behaviour of Sputtering Deposited DLC Films

    Institute of Scientific and Technical Information of China (English)

    LIUErjia; ZENGA; LIULX

    2003-01-01

    Diamondlike carbon (DLC) films were deposited via magnetron sputtering process. The energetic ion hombardment on the surface of growing film is one of the major parameters that control the atom mobility on the flirt1 surface and further the physical and chemical characteristics of the films. In this study, the energy of carbon ions was monitored by changing sputtering powerdensity, and its effect on the electrochemical performance of the films was investigated. For the deposition at a higher sputtering power density, a higher sp3 content in the DLC films was achieved with denser structure and increased film-substrate adhesion. The impedance at the interface of Si substrate/sulfufic acid solution was significantly enhanced, and at the same time higher film resistance, lower capacitance, higher breakdown potential and longer breakdown time were observed, which were related to the significant sp3 content of the DLC films.

  3. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  4. Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

    Energy Technology Data Exchange (ETDEWEB)

    Abedrabbo, S., E-mail: sxa0215@yahoo.com [Department of Physics, University of Jordan, Amman 11942 (Jordan); Mohammed, Q. [Tadawul Shares and Bonds Mediation L.L.C., Dubai (United Arab Emirates); Fiory, A.T. [Department of Physics, New Jersey Institute of Technology, Newark, NJ 07901 (United States)

    2009-02-01

    Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar{sup +} ions were implanted at 300 keV. Oxygen was incorporated by O{sup +}-ion implantation at 130 keV. Samples were annealed at 600 deg. C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er{sup 3+} transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.

  5. Building a Better Capacitor with Thin-Film Atomic Layer Deposition Processing

    Energy Technology Data Exchange (ETDEWEB)

    Pike, Christopher [North Seattle College, WA (United States)

    2015-08-28

    The goal of this research is to determine procedures for creating ultra-high capacity supercapacitors by using nanofabrication techniques and high k-value dielectrics. One way to potentially solve the problem of climate change is to switch the source of energy to a source that doesn’t release many tons of greenhouse gases, gases which cause global warming, into the Earth’s atmosphere. These trap in more heat from the Sun’s solar energy and cause global temperatures to rise. Atomic layer deposition will be used to create a uniform thin-film of dielectric to greatly enhance the abilities of our capacitors and will build them on the nanoscale.

  6. DEPOSITION OF TiBN HARD FILMS ON HOT-WORKING-STEEL DIES FOR ALUMINIUM EXTRUSION VIA A DUPLEX PROCESS

    Institute of Scientific and Technical Information of China (English)

    K. MUller

    2001-01-01

    Hot working steels have been used as die materials for hot extrusion of aluminium.Due to tribological interaction at elevated temperature between the die bearing and thesurface of extruded aluminium profiles, not only the surface quality of the extrudedproduct, but also the lifetime of the dies decreases. Deposition of TiBN hard films onthe die bearing could improve the die performance. Treatment should be done in aduplex process process combining a plasma nitriding pretreatment (PN) and a plasmaassisted chemical vapour deposition (PACVD) of TiBN. In this study the influence ofthe process conditions on the properties of the duplex coatings was investigated. Therelationship between structure and mechanical property was researched. For testingthese TiBN hardfilms under elevated temperature conditions and for comparison withother possible coatings special extrusion dies with different coated bearings were used.The extrusion trials were performed on the 8MN-extrusion press at the research anddevelopment center for extrusion, Technical University of Berlin.

  7. Photocatalytic evaluation of self-assembled porous network structure of ferric oxide film fabricated by dry deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yunchan; Kim, Hyungsub; Lee, Geon-Yong; Pawar, Rajendra C.; Lee, Jai-Sung; Lee, Caroline Sunyong, E-mail: sunyonglee@hanyang.ac.kr

    2016-09-15

    Ferric oxide powder in the alpha phase (α-Fe{sub 2}O{sub 3}) was deposited on an aluminum oxide (Al{sub 2}O{sub 3}) substrate by a nanoparticle deposition system using the dry deposition method. X-ray diffraction (XRD) images confirmed that the phase of the deposited α-Fe{sub 2}O{sub 3} did not change. The deposited α-Fe{sub 2}O{sub 3} was characterized in terms of its microstructure using scanning electron microscopy (SEM). A porous network microstructure formed when small agglomerates of Fe{sub 2}O{sub 3} (SAF) were deposited. The deposition and formation mechanism of the microstructure were investigated using SEM and three-dimensional (3D) profile analysis. First, a dense coating layer formed when the film was thinner than the particle size. After that, as the film thickness increased to over 5 μm, the porous network structure formed by excavating the surface of the coating layer as it was bombarded by particles. Rhodamine B (RhB) was degraded after 6 h of exposure to the Fe{sub 2}O{sub 3} coating layer with SAF, which has good photocatalytic activity and a high porous network structure. The kinetic rate constants of the SAF and large agglomerates of Fe{sub 2}O{sub 3} (LAF) were calculated to be 0.197(h{sup −1}) and 0.128(h{sup −1}), respectively, based on the absorbance results. Using linear sweep voltammetry, we confirmed that the photoelectric effect occurred in the coating layer by measuring the resulting current under illuminated and dark conditions. - Graphical abstract: Self-assembled porous photocatalytic film fabricated by dry deposition method for water purification. - Highlights: • Different sizes of Fe{sub 2}O{sub 3} agglomerates were used to form porous network structure. • Fe{sub 2}O{sub 3} agglomerate particles were deposited using solvent-free process. • Self-assembled porous network microstructure formed better with small agglomerates of Fe{sub 2}O{sub 3}. • Fabricated porous network structure showed its potential to be used

  8. Variable temperature semiconductor film deposition

    Science.gov (United States)

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  9. Factors controlling the microstructure of Ce0.9Gd0.1O2-δ films in pulsed laser deposition process

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, S.; Döbeli, M.;

    2010-01-01

    Films of Ce0.9Gd0.1O2-delta (CGO10) are prepared at a range of conditions by pulsed laser deposition (PLD) on a single crystal Si (100) and MgO (100), and on a polycrystalline Pt/MgO (100) substrate. The relationship between the film microstructure, crystallography, chemical composition and PLD...... processing parameters is studied. It is found that the laser fluence has no significant impact on the film density, whereas the substrate temperature and the oxygen pressure are of essential importance for the film microstructure development. The reduction of deposition temperature, down to 250 oC, together...

  10. CdTe thin film solar cells produced using a chamberless inline process via metalorganic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kartopu, G., E-mail: giray.kartopu@glyndwr.ac.uk; Barrioz, V.; Monir, S.; Lamb, D.A.; Irvine, S.J.C.

    2015-03-02

    Cd{sub 1−x}Zn{sub x}S and CdTe:As thin films were deposited using a recently developed chamberless inline process via metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure and assessed for fabrication of CdTe photovoltaic (PV) solar cells. Initially, CdS and Cd{sub 1−x}Zn{sub x}S coatings were applied onto 15 × 15 cm{sup 2} float glass substrates, characterised for their optical properties, and then used as the window layer in CdTe solar cells which were completed in a conventional MOCVD (batch) reactor. Such devices provided best conversion efficiency of 13.6% for Cd{sub 0.36}Zn{sub 0.64}S and 10% for CdS which compare favourably to the existing baseline MOCVD (batch reactor) devices. Next, sequential deposition of Cd{sub 0.36}Zn{sub 0.64}S and CdTe:As films was realised by the chamberless inline process. The chemical composition of a 1 μm CdTe:As/150 nm Cd{sub 0.36}Zn{sub 0.64}S bi-layer was observed via secondary ions mass spectroscopy, which showed that the key elements are uniformly distributed and the As doping level is suitable for CdTe device applications. CdTe solar cells formed using this structure provided a best efficiency of 11.8% which is promising for a reduced absorber thickness of 1.25 μm. The chamberless inline process is non-vacuum, flexible to implement and inherits from the legacy of MOCVD towards doping/alloying and low temperature operation. Thus, MOCVD enabled by the chamberless inline process is shown to be an attractive route for thin film PV applications. - Highlights: • CdS, CdZnS and CdTe thin films grown by a chamberless inline process • The inline films assessed for fabricating CdTe solar cells • 13.6% conversion efficiency obtained for CdZnS/CdTe cells.

  11. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  12. Growth process optimization of ZnO thin film using atomic layer deposition

    Science.gov (United States)

    Weng, Binbin; Wang, Jingyu; Larson, Preston; Liu, Yingtao

    2016-12-01

    The work reports experimental studies of ZnO thin films grown on Si(100) wafers using a customized thermal atomic layer deposition. The impact of growth parameters including H2O/DiethylZinc (DEZn) dose ratio, background pressure, and temperature are investigated. The imaging results of scanning electron microscopy and atomic force microscopy reveal that the dose ratio is critical to the surface morphology. To achieve high uniformity, the H2O dose amount needs to be at least twice that of DEZn per each cycle. If the background pressure drops below 400 mTorr, a large amount of nanoflower-like ZnO grains would emerge and increase surface roughness significantly. In addition, the growth temperature range between 200 °C and 250 °C is found to be the optimal growth window. And the crystal structures and orientations are also strongly correlated to the temperature as proved by electron back-scattering diffraction and x-ray diffraction results.

  13. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  14. films using atomic layer deposition

    Science.gov (United States)

    Chervinskii, Semen; Matikainen, Antti; Dergachev, Alexey; Lipovskii, Andrey A.; Honkanen, Seppo

    2014-08-01

    We fabricated self-assembled silver nanoisland films using a recently developed technique based on out-diffusion of silver from an ion-exchanged glass substrate in reducing atmosphere. We demonstrate that the position of the surface plasmon resonance of the films depends on the conditions of the film growth. The resonance can be gradually shifted up to 100 nm towards longer wavelengths by using atomic layer deposition of titania, from 3 to 100 nm in thickness, upon the film. Examination of the nanoisland films in surface-enhanced Raman spectrometry showed that, in spite of a drop of the surface-enhanced Raman spectroscopy (SERS) signal after the titania spacer deposition, the Raman signal can be observed with spacers up to 7 nm in thickness. Denser nanoisland films show slower decay of the SERS signal with the increase in spacer thickness.

  15. Approaches Towards the Minimisation of Toxicity in Chemical Solution Deposition Processes of Lead-Based Ferroelectric Thin Films

    Science.gov (United States)

    Bretos, Iñigo; Calzada, M. Lourdes

    The ever-growing environmental awareness in our lives has also been extended to the electroceramics field during the past decades. Despite the strong regulations that have come up (RoHS directive), a number of scientists work on ferroelectric thin film ceramics containing lead. Although the use of these materials in piezoelectric devices is exempt from the RoHS directive, successful ways of decreasing toxic load must be considered a crucial challenge. Within this framework, a few significant advances are presented here, based on different Chemical Solution Deposition strategies. Firstly, the UV sol-gel photoannealing technique (Photochemical Solution Deposition) avoids the volatilisation of hazardous lead from lead-based ferroelectric films, usually observed at conventional annealing temperatures. The key point of this approach lies in the photo-excitation of a few organic components in the gel film. There is also a subsequent annealing of the photo-activated film at temperatures low enough to prevent lead volatilisation, but allowing crystallisation of the pure perovskite phase. Ozonolysis of the films is also promoted when UV-irradiation is carried out in an oxygen atmosphere. This is known to improve electrical response. By this method, nominally stoichiometric solution (i.e., a solution without PbO-excess) derived films with reliable properties, and free of compositional gradients, may be prepared at temperatures as low as 450°C. A PtxPb interlayer between the ferroelectric film and the Pt silicon substrate is observed in the heterostructure of the low-temperature processed films. This is when lead excesses are present in their microstructure. The influence of this interface on the compositional depth profile of the films will be discussed. We will evaluate the feasibility of the UV sol-gel photoannealing technique in fabricating functional films while fulfilling environmental and technological aspects (like integration with silicon IC technology). The second

  16. Nanofriction properties of molecular deposition films

    Institute of Scientific and Technical Information of China (English)

    王强斌; 高芒来; 张嗣伟

    2000-01-01

    The nanofriction properties of Au substrate and monolayer molecular deposition film and multilayer molecular deposition films on Au substrate and the molecular deposition films modified with alkyl-terminal molecule have been investigated by using an atomic force microscope. It is concluded that ( i ) the deposition of molecular deposition films on Au substrate and the modification of alkyl-terminal molecule to the molecular deposition films can reduce the frictional force; (ii) the molecular deposition films with the same terminal exhibit similar nanofriction properties, which has nothing to do with the molecular chain-length and the layer number; (iii) the unstable nanofriction properties of molecular deposition films are contributed to the active terminal of the molecular deposition film, which can be eliminated by decorating the active molecular deposition film with alkyl-terminal molecule, moreover, the decoration of alkyl-terminal molecule can lower the frictional force conspicuously; (iv) the relat

  17. In-situ deposition and processing of YBa2Cu3O(7-x) films and multilayers for optoelectronic devices

    Science.gov (United States)

    Villegier, J. C.; Moriceau, H.; Boucher, H.; di Cioccio, L.; Chicault, R.

    1991-03-01

    In situ direct deposition at about 700 C of thin YBa2Cu3O(7-x) superconductive films and multilayers has been done by three techniques using stoichiometric YBa2Cu3O(7-x) sintered targets. Excimer laser ablation in a dc magnetron system with hollow and planar targets leads to 0.5-, 1.2-, and 2.5-in diameter uniformly superconductive layers under static conditions. High critical current densities associated with low resistivity and good epitaxial behavior are achieved on top of MgO, SrTiO3, LaAlO3, and YSZ single-crystal wafers. High-quality c-oriented films are routinely obtained by means of a dc magnetron on large sapphire substrates covered by a YSZ RF sputtered buffer layer. The infrared properties of such films have been checked at 1.15-micron wavelength. In order to achieve active devices, small YBa2Cu3O7-YSZ-Ag tunnel junctions and arrays have been successfully patterned in the superconductor/insulator/normal-metal trilayers using SNOP (selective niobium overlap process).

  18. Production of HfO2 thin films using different methods: chemical bath deposition, SILAR and sol-gel process

    Science.gov (United States)

    Kariper, İ. A.

    2014-08-01

    Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction (SILAR), and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300°C in an oven (ambient conditions). After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffraction (XRD). The optical properties are investigated using the ultraviolet-visible (UV-VIS) spectroscopic technique. The film thickness was measured via atomic force microscopy (AFM) in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

  19. Process parameters for fast production of ultra-thin polymer film with electrospray deposition under ambient conditions.

    Science.gov (United States)

    Rietveld, Ivo B; Kobayashi, Kei; Yamada, Hirofumi; Matsushige, Kazumi

    2009-11-15

    Poly(vinylidene fluoride) films between 60 and 120nm have been prepared with electrostatic spray deposition (ESD) in 25-45s. The films are robust and exhibit a strong adhesion to the substrate surface. The important electrospray parameters for ultra-thin film formation are droplet size, initial polymer concentration, shear rate at impact, and volume flux. The latter can be understood as a measure for the solvent balance between deposition and evaporation; it affects overall film quality. The droplet size determines the minimum film thickness at which continuous film forms without voids. Polymer concentration affects thin-film smoothness and below a fixed concentration threshold, films cease to appear. For the very first droplets, wetting behavior on the substrate is most important. Subsequently, shear rate determines how voids are filled up and it determines final film smoothness. In addition to the electrospray conditions, substrates that favor wetting and have a capability to conduct charges away from the surface contribute to the formation of well-defined, ultra-thin films.

  20. Characteristics of diamond – like carbon(DLC film deposited by PACVD process

    Directory of Open Access Journals (Sweden)

    Krzysztof Lukaszkowicz

    2016-10-01

    Full Text Available Diamond – like carbon (DLC film is promising materials for many technical and engineering applications. DLC films are used in many different industries for example: in medicine, in electronics, in optics and the automotive industry. They have excellent tribological properties (low friction coefficient, chemical inertness and high mechanical hardness. This paper provides an analysis of the microstructure, mechanical and tribological properties of DLC films. In the study of the coating used several surface sensitive techniques and methods, i.e. High Resolution Transmission Electron Microscopy (HRTEM, Scanning Electron Microscopy (SEM, Raman spectroscopy and tribological tests like ball-on-disc. HRTEM investigation shows an amorphous character of DLC layer. In sliding dry friction conditions the friction coefficient for the investigated elements is set in the range between 0.02-0.03. The investigated coating reveals high wear resistance. The coating demonstrated a good adhesion to the substrate.

  1. Time-Resolved Observation of Deposition Process of Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films in Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Kenji Hanada

    2009-01-01

    Full Text Available Optical emission spectroscopy was used to study pulsed laser ablation of graphite in a hydrogen atmosphere wherein ultrananocrystalline diamond (UNCD/hydrogenated amorphous carbon (a-C:H composite films were grown on heated substrates. Time-resolved photographs of a plume that expanded from a laser-irradiation spot toward a substrate were taken using a high-speed ICCD camera equipped with narrow-bandpass filters. While the emissions from C atoms and C2 dimers lasted above the laser-irradiation spot on the target, the emission from C+ ions lasted above the substrate surface for approximately 7 microseconds, although the emission lifetime of species is generally approximately 10 nanoseconds. This implies that C+ ions actively collided with each other above the substrate surface for such a long time. We believe that the keys to UNCD growth in PLD are the supply of highly energetic carbon species at a high density to the substrate and existence of atomic hydrogen during the growth.

  2. Highly conductive Cu2-xS nanoparticle films through room-temperature processing and an order of magnitude enhancement of conductivity via electrophoretic deposition.

    Science.gov (United States)

    Otelaja, Obafemi O; Ha, Don-Hyung; Ly, Tiffany; Zhang, Haitao; Robinson, Richard D

    2014-11-12

    A facile room-temperature method for assembling colloidal copper sulfide (Cu2-xS) nanoparticles into highly electrically conducting films is presented. Ammonium sulfide is utilized for connecting the nanoparticles via ligand removal, which transforms the as-deposited insulating films into highly conducting films. Electronic properties of the treated films are characterized with a combination of Hall effect measurements, field-effect transistor measurements, temperature-dependent conductivity measurements, and capacitance-voltage measurements, revealing their highly doped p-type semiconducting nature. The spin-cast nanoparticle films have carrier concentration of ∼ 10(19) cm(-3), Hall mobilities of ∼ 3 to 4 cm(2) V(-1) s(-1), and electrical conductivities of ∼ 5 to 6 S · cm(-1). Our films have hole mobilities that are 1-4 orders of magnitude higher than hole mobilities previously reported for heat-treated nanoparticle films of HgTe, InSb, PbS, PbTe, and PbSe. We show that electrophoretic deposition (EPD) as a method for nanoparticle film assembly leads to an order of magnitude enhancement in film conductivity (∼ 75 S · cm(-1)) over conventional spin-casting, creating copper sulfide nanoparticle films with conductivities comparable to bulk films formed through physical deposition methods. The X-ray diffraction patterns of the Cu2-xS films, with and without ligand removal, match the Djurleite phase (Cu(1.94)S) of copper sulfide and show that the nanoparticles maintain finite size after the ammonium sulfide processing. The high conductivities reported are attributed to better interparticle coupling through the ammonium sulfide treatment. This approach presents a scalable room-temperature route for fabricating highly conducting nanoparticle assemblies for large-area electronic and optoelectronic applications.

  3. Highly Conductive Cu 2– x S Nanoparticle Films through Room-Temperature Processing and an Order of Magnitude Enhancement of Conductivity via Electrophoretic Deposition

    KAUST Repository

    Otelaja, Obafemi O.

    2014-11-12

    © 2014 American Chemical Society. A facile room-temperature method for assembling colloidal copper sulfide (Cu2-xS) nanoparticles into highly electrically conducting films is presented. Ammonium sulfide is utilized for connecting the nanoparticles via ligand removal, which transforms the as-deposited insulating films into highly conducting films. Electronic properties of the treated films are characterized with a combination of Hall effect measurements, field-effect transistor measurements, temperature-dependent conductivity measurements, and capacitance-voltage measurements, revealing their highly doped p-type semiconducting nature. The spin-cast nanoparticle films have carrier concentration of ∼1019 cm-3, Hall mobilities of ∼3 to 4 cm2 V-1 s-1, and electrical conductivities of ∼5 to 6 S·cm-1. Our films have hole mobilities that are 1-4 orders of magnitude higher than hole mobilities previously reported for heat-treated nanoparticle films of HgTe, InSb, PbS, PbTe, and PbSe. We show that electrophoretic deposition (EPD) as a method for nanoparticle film assembly leads to an order of magnitude enhancement in film conductivity (∼75 S·cm-1) over conventional spin-casting, creating copper sulfide nanoparticle films with conductivities comparable to bulk films formed through physical deposition methods. The X-ray diffraction patterns of the Cu2-xS films, with and without ligand removal, match the Djurleite phase (Cu1.94S) of copper sulfide and show that the nanoparticles maintain finite size after the ammonium sulfide processing. The high conductivities reported are attributed to better interparticle coupling through the ammonium sulfide treatment. This approach presents a scalable room-temperature route for fabricating highly conducting nanoparticle assemblies for large-area electronic and optoelectronic applications.

  4. Deposition of biopolymer films on micromechanical sensors

    DEFF Research Database (Denmark)

    Keller, Stephan Sylvest; Gammelgaard, Lene; Jensen, Marie P.

    2011-01-01

    The influence of various parameters on the spray-coating of thin films of poly(l-lactide) (PLLA) was investigated. The optimized processing conditions were used for deposition of the biodegradable polymer on arrays of SU-8 microcantilevers. The resonance frequency of the cantilevers before and af...

  5. Development and characterization of a layer by layer ultrasound assisted spray deposition process for thin polymer films

    Science.gov (United States)

    Balakrishnan, Anandh

    An Ultrasound assisted Atomization (UA) system has been developed and investigated to synthesize ˜20microm polyurethane thin films with uniform, repeatable thickness and microstructure. The UA system comprised a 20 kHz atomizer probe mounted on 750 W/cm2 transducer, a heated glass chamber and a rotating substrate. The rationale for the work has been built through a careful Design of Experiments (DoE) that sought to answer questions regarding the process-microstructure relationships from both the spray and material points of view. The independent variables chosen were the polymer solution weight percentage (0.2%, 2%, and 4%), power amplitude (energy) percentage supplied to the nozzle (23%, 29%, 37%, and 46%),the temperature of deposition (45°C, 80°C) and flow rate (50microL/min, 150microL/min). The research questions focused on influence of the process parameters on the microstructure and properties of the film. One of the problems involved fixing the trajectory of the spray and also making use of the droplet surfaces created by the spray. To achieve this, a simple air-draft attachment was devised and the influence of the same was evaluated through process and film characterization experiments. A mechanism for the draft has been schematically provided. The use of such a draft to fabricate thin polymer films via ultrasound atomization has not been achieved before and represents a 'first step' in advancing this ultrasound technology. The primary findings of the work were that the film microstructure and properties were heavily influenced by the flow rate, energy of atomization, and test temperature. In addition, the droplet diameters seemed to be readily amenable to change for the 0.2 and 2% solutions and the use of the air-draft made the process feasible, repeatable and accurate. For the 4% solutions, viscosity seemed to stabilize the liquid solution film at the tip requiring larger energies of atomization. In all, relative to the 0.2% films the fracture strengths

  6. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  7. Deposition of Aluminium Oxide Films by Pulsed Reactive Sputtering

    Institute of Scientific and Technical Information of China (English)

    Xinhui MAO; Bingchu CAI; Maosong WU; Guoping CHEN

    2003-01-01

    Pulsed reactive sputtering is a novel process used to deposit some compound films, which are not deposited by traditional D.C. reactive sputtering easily. In this paper some experimental results about the deposition of Al oxide films by pulsed reactive sputtering are presented. The hysteresis phenomenon of the sputtering voltage and deposition rate with the change of oxygen flow during sputtering process are discussed.

  8. A rapid process of Yba2Cu3O7-δ thin film fabrication using trifluoroacetate metal-organic deposition with polyethylene glycol additive

    DEFF Research Database (Denmark)

    Wu, Wei; Feng, Feng; Shi, Kai

    2013-01-01

    and oxygenation processes, mass percentage and molecular weight of PEG additive, YBCO thin films with Jc of about 4.5 MA cm-2 (77 K, self-field) could be routinely fabricated using (20-30) wt% PEG(1000-2000) additive with a total treatment time of about 2 h including the 15 min pyrolysis process time. The effects......Trifluoroacetate metal-organic deposition (TFA-MOD) is a promising technique to fabricate YBa2Cu3O7-δ (YBCO) superconducting films. However, its slow pyrolysis process, which usually takes more than 10 h, constitutes a barrier for industrial production. In this study, polyethylene glycol (PEG......) was utilized to reduce the stress generation inside the coated films when the strong pyrolysis reactions happen. With the addition of 30 wt% PEG2000 to the precursor solution, a smooth film surface could be obtained through a rapid pyrolysis process of 15 min. After the optimizations of the crystallization...

  9. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  10. Cd{sub 1−x}Zn{sub x}S thin films with low Zn content obtained by an ammonia-free chemical bath deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Carreón-Moncada, I. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico); González, L.A., E-mail: luis.gonzalez@cinvestav.edu.mx [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico); Pech-Canul, M.I. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Saltillo, Av. Industria Metalúrgica 1062, CP. 25900, Ramos Arizpe, Coah., México (Mexico); Ramírez-Bon, R. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apartado Postal 1-798, CP. 76001 Querétaro, Qro., México (Mexico)

    2013-12-02

    Cd{sub 1−x}Zn{sub x}S films with low Zn content were obtained on glass substrates by an ammonia-free chemical bath deposition process. Alkaline reaction solutions were prepared using cadmium chloride, zinc chloride, sodium citrate, thiourea and potassium hydroxide. As a result of varying the mixture ratio between Cd and Zn precursors, microstructural studies from X-ray diffraction reveal that the resulting films have hexagonal, wurzite type, crystalline structure with changes in the preferential growth orientation. Important changes on the surface morphology and thickness of the Cd{sub 1−x}Zn{sub x}S films were also observed as effects of adding Zn to the CdS lattice. Optical studies show that Cd{sub 1−x}Zn{sub x}S thin films with energy band gaps in the range from 2.48 to 2.65 eV were obtained. - Highlights: • Cd{sub 1−x}Zn{sub x}S layers were grown on glass by ammonia-free chemical bath depositionFilms with low Zn content were obtained using reaction solutions with pH11.5 • Zn addition produced changes on the orientation growth and morphology of the films • Cd{sub 1−x}Zn{sub x}S films have energy band gap values from 2.48 to 2.65 eV.

  11. Room-Temperature Deposition of NbN Superconducting Films

    Science.gov (United States)

    Thakoor, S.; Lamb, J. L.; Thakoor, A. P.; Khanna, S. K.

    1986-01-01

    Films with high superconducting transition temperatures deposited by reactive magnetron sputtering. Since deposition process does not involve significantly high substrate temperatures, employed to deposit counter electrode in superconductor/insulator/superconductor junction without causing any thermal or mechanical degradation of underlying delicate tunneling barrier. Substrates for room-temperature deposition of NbN polymeric or coated with photoresist, making films accessible to conventional lithographic patterning techniques. Further refinements in deposition technique yield films with smaller transition widths, Tc of which might approach predicted value of 18 K.

  12. Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

    Directory of Open Access Journals (Sweden)

    Heberto Gómez-Pozos

    2016-01-01

    Full Text Available A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM and secondary ion mass spectroscopy (SIMS, respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.

  13. Processing and properties of lead zirconate titanate thin films on gallium nitride and ruthenium by sol-gel and chemical vapor deposition

    Science.gov (United States)

    Cao, Wei

    The Pb(ZrxTi1-x)O3 (PZT) thin films are potential candidates for ferroelectric random access memory (FeRAM) devices and components for microelectromechanical systems (MEMS). For example, the PZT/GaN system is being explored as RF MEMS devices for insertion in RF communication systems. A reproducible sol-gel process was developed for the deposition of PZT films on wurtzite (0001) GaN/sapphire substrates. The composition, crystallography, and interfacial nanochemistry were evaluated by various characterization techniques. The PZT/GaN heterostructure exhibited a chemically sharp interface with insignificant interdiffusion between PZT and GaN layers. However, PZT in metal -ferroelectric -semiconductor (MFS) configuration showed lower capacitance and asymmetrical polarization hysteresis compared to PZT in metal-ferroelectric-metal configuration. Such a deviation was attributed to the high depolarization field (Edepol) within PZT. To mitigate this issue, a two-pronged approach was used. First, the calculated spatial distribution of the electric field and potential, which stem from all the charge densities within the MFS configuration, demonstrated that by adjusting controllable parameters, one can minimize Edepol and maximize polarization. Second, a robust metal-organic chemical vapor deposition (MOCVD) process was developed to fabricate high quality PZT thin films on GaN. In this experimental approach, phase-pure and highly (111) oriented PZT films were deposited on GaN/sapphire substrates by MOCVD. The orientation relationships of PZT/GaN system were determined using x-ray pole figure and high-resolution transmission electron microscopy (TEM). The nanochemistry of the PZT/GaN interface, studied using analytical TEM, indicated a chemically sharp interface with interdiffusion limited to a region below 5 nm. The properties of MOCVD-PZT on GaN are briefly compared with PZT by sol-gel processing, rf sputtering, and pulsed laser deposition. Additionally, a preliminary study

  14. Interplay of processing, morphological order, and charge-carrier mobility in polythiophene thin films deposited by different methods: comparison of spin-cast, drop-cast, and inkjet-printed films.

    Science.gov (United States)

    Wong, Loke-Yuen; Png, Rui-Qi; Silva, F B Shanjeera; Chua, Lay-Lay; Repaka, D V Maheswar; Shi-Chen; Gao, Xing-Yu; Ke, Lin; Chua, Soo-Jin; Wee, Andrew T S; Ho, Peter K H

    2010-10-05

    The dependence of morphology and polymer-chain orientation of regioregular poly(3-hexylthiophene) (rrP3HT) thin films on processing conditions have been widely studied. However, their possible variation across the film thickness direction remains largely unknown. We report here a marked difference in the optical dielectric (n,k) spectra between the top and bottom interfaces of spin-cast (sc) rrP3HT films deposited from chlorobenzene solutions. These spectra were obtained from reflection variable-angle spectroscopic ellipsometry using a self-consistent graded optical model with self-imposed Kramers-Krönig consistency. The top interface shows a red-shifted absorption that is characteristic of better order than at the bottom, across a wide range of film thicknesses. This disparity diminishes in drop-cast (dc) and multipass inkjet-printed (ijp) films, and disappears in amorphous films such as those of polystyrene and of a green-emitting phenyl-substituted poly(p-phenylenevinylene). The (n,k) spectra also reveal that crystallinity increases across sc dc > ijp films. Finally, near-edge X-ray absorption fine structure spectroscopy also shows the frontier chains in ijp and dc films are more isotropically oriented than those in sc films. These results suggest that semicrystalline conjugated polymer films can be produced far from equilibrium. This explains the marked variation in their (opto)electronic properties between the top and bottom surfaces that has sometimes been found depending on the film deposition method. In particular, an unusually pronounced crystallization is induced by ijp. We label this marked ijp-induced crystallization the "ijp morphology", which appears to be general, as it is found also in single-inkjet-droplet films. It appears also to be responsible for the lower field-effect mobility measured for ijp films deposited on a variety of linear and circular electrode arrays. This however can fortuitously be reversed by annealing in solvent vapor. As all

  15. Bismuth thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.

    1999-07-01

    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  16. Effects of deposition methods and processing techniques on band gap, interband electronic transitions, and optical absorption in perovskite CH3NH3PbI3 films

    Science.gov (United States)

    Li, Wenwu; Sha, Tingting; Wang, Yan; Yu, Wenlei; Jiang, Kai; Zhou, Hang; Liu, Chuan; Hu, Zhigao; Chu, Junhao

    2017-07-01

    Despite intensive studies on the improvements of conversion efficiencies in solar cells, many questions regarding the effects of deposition techniques on optical properties and electronic band structures of CH3NH3PbI3 (MAPbI3) remain unresolved. Here, perovskite MAPbI3 films were prepared using different deposition methods and processing techniques. The effects of deposition and processing parameters on dielectric functions and optical absorption were investigated by fitting the reflectance spectra in the photon energy range of 0.5-5.16 eV. It is found that the bandgap (Eg) of the films deposited by two-step spinning (1.591 eV) is larger than that prepared by evaporations (1.514 eV), due to different Pb-I orbital hybridization and spin-orbit coupling. Moreover, the Eg value of the films increases from 1.543 eV to 1.591 eV after toluene solution dripping. Five interband electronic transitions ( Ep 1, Ep 2, Ep 3, Ep 4 , and Ep 5 ) are observed, and the origins of Ep 2, Ep 3 , and Ep 4 are assigned to the direct transitions between the highest valence band and the lowest lying conduction band at the R, M, and X symmetry points. Further, the transition energies of the films deposited by evaporation are less than those prepared by two-step spinning. The present results shed light on preparing more reliable and reproducible high performance MAPbI3-based solar cells.

  17. VUV-light-induced deposited silica films

    Science.gov (United States)

    Buck, Christopher K.; Pedraza, Anthony J.; Benson, Roberto S.; Park, Jae-Won

    1998-05-01

    A novel technique to deposit dielectric films at room temperature is described. The deposition of the silica takes place inside a cylindrical glass chamber where a silent discharge is generated between two electrodes connected to a high voltage, high frequency AC source. The chamber contains two parallel glass tubes where the electrodes are located and is filled with argon or xenon at a pressure of 100 mbar. Under these conditions, it has been shown that high intensity VUV light is generated peaking at 126 nm for argon and at 172 nm for xenon. This VUV radiation seems to produce photoablation of the glass tubes that surround the electrodes. Upon operation of the lamp, polyimide, polypropylene and silicon wafer substrates lying at the bottom of the vessel became coated with silica. The films, identified using X-ray photoelectron spectroscopy (XPS), revealed that the silica is oxygen-deficient with a composition of SiO x where x is between 1.7 and 1.8. The deposition rate on silicon wafers was measured by ellipsometry. When Xe gas is used the deposition rate is much lower than when Ar is used. This result is consistent with a photoablation process since the energy of the photons generated in Ar peaks at 10 eV while those generated in Xe peaks at 7 eV. These energy values should be compared with the O-Si bond strength energy that is 8.3 eV. The morphology and structure of the films were examined by scanning and transmission electron microscopies. Deposition of carbonaceous films occurred when the glass tubes containing the electrodes were coated with carbon.

  18. Electrical conduction processes in as-deposited indium phthalocyanine chloride thin films using gold and aluminium electrode combination

    Energy Technology Data Exchange (ETDEWEB)

    Samuel, Mammen; Menon, C S; Unnikrishnan, N V [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686 560, Kerala (India)

    2006-01-11

    Sandwich structures of the type (Au-InPcCl-Al) have been fabricated by successive vacuum deposition of indium phthalocyanine chloride (InPcCl) thin films and aluminium (Al) fingers onto Ohmic gold (Au) electrodes on glass substrates. Device characteristics of as-deposited Au/InPcCl/Al are obtained and found to show rectification properties. Current density-voltage characteristics under forward bias (aluminium electrode negative) are found to be due to Ohmic conduction at lower voltages. At higher voltages there is space charge limited conductivity (SCLC) controlled by an exponential trapping distribution above the valence edge. Transport properties of the material at ambient temperature have been obtained from the analysis of the samples in the Ohmic and SCLC regions. Under the reverse bias, Schottky emission is identified at lower voltages.

  19. Characteristics of TiO2/ZnO bilayer film towards pH sensitivity prepared by different spin coating deposition process

    Science.gov (United States)

    Rahman, Rohanieza Abdul; Zulkefle, Muhammad Al Hadi; Abdullah, Wan Fazlida Hanim; Rusop, M.; Herman, Sukreen Hana

    2016-07-01

    In this study, titanium dioxide (TiO2) and zinc oxide (ZnO) bilayer film for pH sensing application will be presented. TiO2/ZnO bilayer film with different speed of spin-coating process was deposited on Indium Tin Oxide (ITO), prepared by sol-gel method. This fabricated bilayer film was used as sensing membrane for Extended Gate Field-Effect Transistor (EGFET) for pH sensing application. Experimental results indicated that the sensor is able to detect the sensitivity towards pH buffer solution. In order to obtained the result, sensitivity measurement was done by using the EGFET setup equipment with constant-current (100 µA) and constant-voltage (0.3 V) biasing interfacing circuit. TiO2/ZnO bilayer film which the working electrode, act as the pH-sensitive membrane was connected to a commercial metal-oxide semiconductor FET (MOSFET). This MOSFET then was connected to the interfacing circuit. The sensitivity of the TiO2 thin film towards pH buffer solution was measured by dipping the sensing membrane in pH4, pH7 and pH10 buffer solution. These thin films were characterized by using Field Emission Scanning Electron Microscope (FESEM) to obtain the surface morphology of the composite bilayer films. In addition, I-V measurement was done in order to determine the electrical properties of the bilayer films. According to the result obtained in this experiment, bilayer film that spin at 4000 rpm, gave highest sensitivity which is 52.1 mV/pH. Relating the I-V characteristic of the thin films and sensitivity, the sensing membrane with higher conductivity gave better sensitivity.

  20. The application of magnetic self-filter to optimization of AIN film growth process during the impulse plasma deposition synthesis

    Directory of Open Access Journals (Sweden)

    Chodun Rafal

    2016-03-01

    Full Text Available This work presents the very first results of the application of plasma magnetic filtering achieved by a coil coupled with an electrical circuit of a coaxial accelerator during the synthesis of A1N thin films by use of Impulse Plasma Deposition method (IPD. The uniqueness of this technical solution lies in the fact that the filter is not supplied, controlled and synchronized from any external device. Our solution uses the energy from the electrical circuit of plasma accelerator. The plasma state was described on the basis of OES studies. Estimation of the effects of plasma filtering on the film quality was carried out on the basis of characterization of structure morphology (SEM, phase and chemical composition (vibrational spectroscopy. Our work has shown that the use of the developed magnetic self-filter improved the structure of the AlN coatings synthesized under the condition of impulse plasma, especially by the minimization of the tendency to deposit metallic aluminum droplets and columnar growth.

  1. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  2. Properties of electrophoretically deposited single wall carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Junyoung; Jalali, Maryam; Campbell, Stephen A., E-mail: campb001@umn.edu

    2015-08-31

    This paper describes techniques for rapidly producing a carbon nanotube thin film by electrophoretic deposition at room temperature and determines the film mass density and electrical/mechanical properties of such films. The mechanism of electrophoretic deposition of thin layers is explained with experimental data. Also, film thickness is measured as a function of time, electrical field and suspension concentration. We use Rutherford backscattering spectroscopy to determine the film mass density. Films created in this manner have a resistivity of 2.14 × 10{sup −3} Ω·cm, a mass density that varies with thickness from 0.12 to 0.54 g/cm{sup 3}, and a Young's modulus between 4.72 and 5.67 GPa. The latter was found to be independent of thickness from 77 to 134 nm. We also report on fabricating free-standing films by removing the metal seed layer under the CNT film, and selectively etching a sacrificial layer. This method could be extended to flexible photovoltaic devices or high frequency RF MEMS devices. - Highlights: • We explain the electrophoretic deposition process and mechanism of thin SWCNT film deposition. • Characterization of the SWCNT film properties including density, resistivity, transmittance, and Young's modulus. • The film density and resistivity are found to be a function of the film thickness. • Techniques developed to create free standing layers of SW-CNTs for flexible electronics and mechanical actuators.

  3. Dual Ion Beam Deposition Of Diamond Films On Optical Elements

    Science.gov (United States)

    Deutchman, Arnold H.; Partyka, Robert J.; Lewis, J. C.

    1990-01-01

    Diamond film deposition processes are of great interest because of their potential use for the formation of both protective as well as anti-reflective coatings on the surfaces of optical elements. Conventional plasma-assisted chemical vapor deposition diamond coating processes are not ideal for use on optical components because of the high processing temperatures required, and difficulties faced in nucleating films on most optical substrate materials. A unique dual ion beam deposition technique has been developed which now makes possible deposition of diamond films on a wide variety of optical elements. The new DIOND process operates at temperatures below 150 aegrees Farenheit, and has been used to nucleate and grow both diamondlike carbon and diamond films on a wide variety of optical :taterials including borosilicate glass, quartz glass, plastic, ZnS, ZnSe, Si, and Ge.

  4. Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties

    Directory of Open Access Journals (Sweden)

    Andrea Capasso

    2015-10-01

    Full Text Available Graphene films were produced by chemical vapor deposition (CVD of pyridine on copper substrates. Pyridine-CVD is expected to lead to doped graphene by the insertion of nitrogen atoms in the growing sp2 carbon lattice, possibly improving the properties of graphene as a transparent conductive film. We here report on the influence that the CVD parameters (i.e., temperature and gas flow have on the morphology, transmittance, and electrical conductivity of the graphene films grown with pyridine. A temperature range between 930 and 1070 °C was explored and the results were compared to those of pristine graphene grown by ethanol-CVD under the same process conditions. The films were characterized by atomic force microscopy, Raman and X-ray photoemission spectroscopy. The optical transmittance and electrical conductivity of the films were measured to evaluate their performance as transparent conductive electrodes. Graphene films grown by pyridine reached an electrical conductivity of 14.3 × 105 S/m. Such a high conductivity seems to be associated with the electronic doping induced by substitutional nitrogen atoms. In particular, at 930 °C the nitrogen/carbon ratio of pyridine-grown graphene reaches 3%, and its electrical conductivity is 40% higher than that of pristine graphene grown from ethanol-CVD.

  5. High Critical Current Density of YBa2Cu3O7-x Superconducting Films Prepared through a DUV-assisted Solution Deposition Process.

    Science.gov (United States)

    Chen, Yuanqing; Bian, Weibai; Huang, Wenhuan; Tang, Xinni; Zhao, Gaoyang; Li, Lingwei; Li, Na; Huo, Wen; Jia, Jiqiang; You, Caiyin

    2016-12-01

    Although the solution deposition of YBa2Cu3O7-x (YBCO) superconducting films is cost effective and capable of large-scale production, further improvements in their superconductivity are necessary. In this study, a deep UV (DUV) irradiation technique combined with a low-fluorine solution process was developed to prepare YBCO films. An acrylic acidic group as the chelating agent was used in the precursor solution. The acrylic acidic group was highly sensitive to DUV light at 254 nm and significantly absorbed UV light. The coated gel films exposed to DUV light decomposed at 150 °C and copper aggregation was prevented. The UV irradiation promoted the removal of the carbon residue and other by-products in the films, increased the density and enhanced the crystallinity and superconductivity of the YBCO films. Using a solution with F/Ba = 2, YBCO films with thicknesses of 260 nm and enhanced critical current densities of nearly 8 MA/cm(2) were produced on the LaAlO3 (LAO) substrates.

  6. High Critical Current Density of YBa2Cu3O7‑x Superconducting Films Prepared through a DUV-assisted Solution Deposition Process

    Science.gov (United States)

    Chen, Yuanqing; Bian, Weibai; Huang, Wenhuan; Tang, Xinni; Zhao, Gaoyang; Li, Lingwei; Li, Na; Huo, Wen; Jia, Jiqiang; You, Caiyin

    2016-12-01

    Although the solution deposition of YBa2Cu3O7‑x (YBCO) superconducting films is cost effective and capable of large-scale production, further improvements in their superconductivity are necessary. In this study, a deep UV (DUV) irradiation technique combined with a low-fluorine solution process was developed to prepare YBCO films. An acrylic acidic group as the chelating agent was used in the precursor solution. The acrylic acidic group was highly sensitive to DUV light at 254 nm and significantly absorbed UV light. The coated gel films exposed to DUV light decomposed at 150 °C and copper aggregation was prevented. The UV irradiation promoted the removal of the carbon residue and other by-products in the films, increased the density and enhanced the crystallinity and superconductivity of the YBCO films. Using a solution with F/Ba = 2, YBCO films with thicknesses of 260 nm and enhanced critical current densities of nearly 8 MA/cm2 were produced on the LaAlO3 (LAO) substrates.

  7. Effect of Silane Flow Rate on Structure and Corrosion Resistance of Ti-Si-N Thin Films Deposited by a Hybrid Cathodic Arc and Chemical Vapour Process

    Institute of Scientific and Technical Information of China (English)

    YIN Long-Cheng; LUAN Sen; LV Guo-Hua; WANG Xing-Quan; HUANG Jun; JIN Hui; FENG Ke-Cheng; YANG Si-Ze

    2008-01-01

    Ti-Si-N thin films with different silicon contents are deposited by a cathodic arc technique in an Ar+N2+SiH4mixture atmosphere. With the increase of silane flow rate, the content of silicon in the Ti-Si-N films varies from2.0 at. % to 12.2 at.%. Meanwhile, the cross-sectional morphology of these films changes from an apparent columnar microstructure to a dense fine-grained structure. The x-ray diffractometer (XRD) and x-ray photoelectron spectroscopy (XPS) results show that the Ti-Si-N film consists of TiN crystallites and SiNx amorphous phase.The corrosion resistance is improved with the increase of silane flow rate. Growth defects in the films produced play a key role in the corrosion process, especially for the local corrosion. The porosity of the films decreases from 0.13% to 0.00032% by introducing silane at the flow rate of 14 sccm.

  8. Morphological and chemical study of the initial growth of CdS thin films deposited using an ammonia-free chemical process

    Energy Technology Data Exchange (ETDEWEB)

    Mazon-Montijo, D.A.; Sotelo-Lerma, M.; Quevedo-Lopez, M. [Centro de Investigacion en Polimeros y Materiales, Universidad de Sonora, Apdo. Postal 130, 83190 Hermosillo, Son. (Mexico); El-Bouanani, M. [Department of Materials Science and Engineering, University of North Texas, P.O. Box 305310 Denton, TX 76203-5310 (United States); Alshareef, H.N. [SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 (United States); Espinoza-Beltran, F.J. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico); Ramirez-Bon, R. [Centro de Investigacion y Estudios Avanzados del IPN, Unidad Queretaro, Apdo. Postal 1-798, 76001 Queretaro, Qro. (Mexico)], E-mail: rrbon@qro.cinvestav.mx

    2007-11-15

    We study the initial growth stages of CdS thin films deposited by an ammonia-free chemical bath deposition process. This ammonia-free process is more environmentally benign because it reduces potential ammonia release to the environment due to its high volatility. Instead of ammonia, sodium citrate was used as the complexing agent. We used atomic force microscopy (AFM), Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS) to investigate the morphological and chemical modifications at the substrate surface during the first initial stages of the CdS deposition process. Additionally, X-ray diffraction (XRD) and optical transmission spectroscopy measurements were carried out to compliment the study. XPS results show that the first nucleation centers are composed by Cd(OH){sub 2} which agglomerate in patterns of bands, as demonstrated by AFM results. It is also observed that the conversion to CdS (by anionic exchange) of the first nucleus begins before the substrate surface is completely covered by a homogenous film.

  9. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  10. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  11. Density functional theory study on the full ALD process of silicon nitride thin film deposition via BDEAS or BTBAS and NH3.

    Science.gov (United States)

    Huang, Liang; Han, Bo; Han, Bing; Derecskei-Kovacs, Agnes; Xiao, Manchao; Lei, Xinjian; O'Neill, Mark L; Pearlstein, Ronald M; Chandra, Haripin; Cheng, Hansong

    2014-09-14

    A detailed reaction mechanism has been proposed for the full ALD cycle of Si3N4 deposition on the β-Si3N4(0001) surface using bis(diethylamino)silane (BDEAS) or bis(tertiarybutylamino)silane (BTBAS) as a Si precursor with NH3 acting as the nitrogen source. Potential energy landscapes were derived for all elementary steps in the proposed reaction network using a periodic slab surface model in the density functional approximation. Although the dissociative reactivity of BTBAS was slightly better than that of BDEAS, the thermal deposition process was still found to be an inherently high temperature process due to the high activation energies during the dissociative chemisorption of both precursors and the surface re-amination steps. These results underline the need to develop new precursors and alternative nitrogen sources when low temperature thermal silicon nitride films are targeted.

  12. Luminescent thin films by the chemical aerosol deposition technology (CADT)

    NARCIS (Netherlands)

    Martin, F.J.; Martin, F.J.; Albers, H.; Lambeck, Paul; Popma, T.J.A.; van de Velde, G.M.H.

    1992-01-01

    Zinc sulphide thin films have been deposited with CART using zinc chlorideand zinc acetylacetonate as Zn compounds and thiourea and 1,1,3,3-tetramethylthiourea as S compounds soluted in methanol, ethanol, isopropanol and cellosolve. After optimalization of the deposition process homogeneous layers

  13. Sputtering deposition and characterization of ultrathin amorphous carbon films

    Science.gov (United States)

    Lu, Wei

    1999-11-01

    This dissertation focuses on experimental investigations of ultrathin, ultrasmooth amorphous carbon (a-C) films deposited on Si(100) substrates by radio frequency (RF) sputtering and characterization of the nanomechanical and nanotribological properties and thermal stability of the films. Ultrathin a-C films of thickness 5--100 nm and typical root-mean-square roughness of 0.15--1 nm were deposited on ultrasmooth Si(100) substrates using pure argon as the sputtering gas. A low-pressure RF argon discharge model was used to analyze the plasma parameters in the film growth environment. These plasma parameters correlate the deposition conditions with the film growth processes. Atomic force microscopy (AFM) and surface force microscopy (SFM) were used to characterize the nanomechanical and nanotribological properties of the a-C films. X-ray photoelectron spectroscopy (XPS) was used to investigate the compositions and microstructures of the films. Sputter-etching measurements of the a-C films by energetic argon ion bombardment were used to study the surface binding energy of carbon atoms in a-C films deposited under different conditions. The dependence of film properties on deposition conditions was studied, and relations between nanomechanical and nanotribological properties were discussed in terms of a modified deformation index. The deformation and nanotribology mechanisms of the a-C films were compared with those of other films, such as TiC and Cr films (both 100 nm thick), and bulk Si(100). Reactive RF sputtering of nitrogenated amorphous carbon (a-CNx) films was investigated by introducing nitrogen into the a-C films during film growth by using an argon-nitrogen gas mixture as the sputtering gas. The alloying effect of nitrogen on the film growth and properties, such as hardness and surface energy, was studied and interpreted in terms of the changes in the plasma environment induced due to differences in the composition of the sputtering gas mixture. The thermal

  14. Microreactor-Assisted Solution Deposition for Compound Semiconductor Thin Films

    Directory of Open Access Journals (Sweden)

    Chang-Ho Choi

    2014-05-01

    Full Text Available State-of-the-art techniques for the fabrication of compound semiconductors are mostly vacuum-based physical vapor or chemical vapor deposition processes. These vacuum-based techniques typically operate at high temperatures and normally require higher capital costs. Solution-based techniques offer opportunities to fabricate compound semiconductors at lower temperatures and lower capital costs. Among many solution-based deposition processes, chemical bath deposition is an attractive technique for depositing semiconductor films, owing to its low temperature, low cost and large area deposition capability. Chemical bath deposition processes are mainly performed using batch reactors, where all reactants are fed into the reactor simultaneously and products are removed after the processing is finished. Consequently, reaction selectivity is difficult, which can lead to unwanted secondary reactions. Microreactor-assisted solution deposition processes can overcome this limitation by producing short-life molecular intermediates used for heterogeneous thin film synthesis and quenching the reaction prior to homogeneous reactions. In this paper, we present progress in the synthesis and deposition of semiconductor thin films with a focus on CdS using microreactor-assisted solution deposition and provide an overview of its prospect for scale-up.

  15. Liquid phase deposition of electrochromic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  16. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  17. Perovskite thin films via atomic layer deposition.

    Science.gov (United States)

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  18. Fabrication of barium titanate nanoparticles/poly (methylmethacrylate composite films by a combination of deposition process and spin-coating technique

    Directory of Open Access Journals (Sweden)

    Yoshio Kobayashi

    2014-10-01

    Full Text Available The present work proposes a method for fabricating poly(methylmethacrylate (PMMA film containing barium titanate (BT nanoparticles (BT/PMMA film. BT particles with an average size of 77.6 ± 30.5 nm and a crystal size of 28.1 nm were synthesized by adding sodium hydroxide aqueous solution to titanium tetraisopropoxide/acetylacetone/i-propanol solution suspending barium hydroxide. A sodium glass plate, of which surface was modified with polyvinylpyrrolidone, was immersed into water suspending the BT particles, which resulted in deposition of the BT particles on the plate. A BT/PMMA film was fabricated by twice performance of a process composed of spin-coating of N-methyl-2-pyrrolidone (NMP dissolving PMMA on the plate, and then drying the coated plate in the atmosphere at room temperature. Spin-coating of a PMMA/NMP solution with a PMMA concentration of 150 g/L at a rotating speed of 5000 rpm provided fabrication of a BT/PMMA film with a BT volume fraction of 35.5%, a thickness of ca. 300 nm, and a transmittance of ca. 90% in the visible light region.

  19. Contamination control in ion beam sputter-deposited films

    Science.gov (United States)

    Pearson, David I. C.; Pochon, Sebastien; Cooke, Mike

    2013-09-01

    The conventional wisdom to guarantee high purity thin films in IBSD has been to use a large vacuum chamber usually in excess of 1 m3. The chamber size was important to minimise the effect of reflected high energy particles from the target surface sputtering chamber materials onto the substrate and to allow the use of large targets to avoid beam overspill onto chamber furniture. An improved understanding of beam trajectories and re-sputtered material paths has allowed the deposition of thin films with very low metallic impurity content in a chamber volume below 0.5 m3. Thus, by optimizing the sputter ion source, target and substrate configuration, and by arranging suitable shielding made of an appropriate material in the process chamber, the levels of contaminants in the deposited films have been reduced to a minimum. With this optimum hardware arrangement, the ion beam process parameters were then optimized with respect to the ppm levels of contaminants measured in the films by SIMS analysis. Using the deposition of SiO2 as a standard material for DSIMS composition analysis and impurity level determination, it has been shown that our IBS deposition tool is capable of depositing films with contamination levels of <50ppm for the total of all metal impurities in the deposited films.

  20. Composition and structural study of solution-processed Zn(S,O,OH) thin films grown using H{sub 2}O{sub 2} based deposition route

    Energy Technology Data Exchange (ETDEWEB)

    Buffière, M., E-mail: marie.buffiere@imec.be [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); 44Solar, 14 rue Kepler, 44240 La Chapelle-sur-Erdre (France); Gautron, E. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Hildebrandt, T. [Institut de Recherche et Développement sur l' Energie Photovoltaïque (IRDEP)-UMR 7174 EDF-CNRS-ENSCP, 6 quai Watier-78401 Chatou Cedex (France); Harel, S.; Guillot-Deudon, C.; Arzel, L. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Naghavi, N. [Institut de Recherche et Développement sur l' Energie Photovoltaïque (IRDEP)-UMR 7174 EDF-CNRS-ENSCP, 6 quai Watier-78401 Chatou Cedex (France); Barreau, N. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Kessler, J. [Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); 44Solar, 14 rue Kepler, 44240 La Chapelle-sur-Erdre (France)

    2013-05-01

    Recent results have revealed that the low deposition time issue of chemical bath deposited (CBD) Zn(S,O,OH) buffer layer used in Cu(In,Ga)Se{sub 2} (CIGSe) solar cells could be resolved using H{sub 2}O{sub 2} as an additive in the chemical bath solution. Although the use of this additive does not hinder the electrical properties of the resulting Zn(S,O,OH)-buffered CIGSe solar cells, the impact of H{sub 2}O{sub 2} on the Zn(S,O,OH) properties remains unclear. The present contribution aims at determining the chemical composition and the microstructure of Zn(S,O,OH) film deposited by CBD using the alternative deposition bath containing the standard zinc sulfate, thiourea, ammonia but also H{sub 2}O{sub 2} additive. Both X-ray photoemission spectroscopy and energy dispersive X-ray spectroscopy analyses reveal higher sulfur content in alternatively deposited Zn(S,O,OH), since the first step growth of the layer. According to transmission electron microscopy analyses, another consequence of the higher deposition rate achieved when adding H{sub 2}O{sub 2} in the bath is the modification of the absorber/buffer interface. This could be explained by the enhancement of the cluster growth mechanism of the layer. - Highlights: ► The Zn(S,O,OH) layer composition can vary with the chemical bath process used. ► The alternative process leads to a faster incorporation of sulfur in the layer. ► No ZnS epitaxial layer has been found at absorber/alternative buffer interface. ► The use of H{sub 2}O{sub 2} enhances the cluster-by-cluster growth mechanism.

  1. In-situ analyses on the reactive sputtering process to deposit Al-doped ZnO films using an Al-Zn alloy target

    Energy Technology Data Exchange (ETDEWEB)

    Tsukamoto, Naoki; Oka, Nobuto; Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp

    2012-03-01

    The kinetic energies of generated ions were investigated during the reactive sputtering process to deposit Al-doped ZnO (AZO) films using an Al-Zn alloy target. The sputtering system was equipped with specially designed double feedback system to stabilise the reactive sputtering processes and analysis was performed with a quadrupole mass spectrometer combined with an energy analyser. Negative ions O{sup -}, O{sub 2}{sup -}, AlO{sup -} and AlO{sub 2}{sup -} with high kinetic energies corresponding to cathode voltage are generated at the partially oxidised target surface, after which some of the ions undergo subsequent charge exchange and/or dissociation. Positive ions O{sup +}, Ar{sup +}, Zn{sup +} and Al{sup +} with lower kinetic energies (around 10 eV) are generated by charge exchange of sputtered neutral O, Ar, Zn and Al atoms, respectively. As the target surface oxidises, cathode voltage decrease, the flux of high-energy negative ions increases and the electrical properties of the AZO degrade by ion bombardment as well as the AZO films that are deposited by conventional magnetron sputtering using an AZO target.

  2. Influence of Oxygen in Sputtering and Annealing Processes on Properties of ZnO:Ag Films Deposited by rf Sputtering

    Institute of Scientific and Technical Information of China (English)

    DUAN Li; GAO Wei

    2011-01-01

    ZnO:Ag films were prepared by rf sputtering on Si substrates.A detailed study on as-grown and annealed films was carried out using x-ray diffraction(XRD).The results indicate that the film crystalline quality and the Ag doping efficiency were both influenced by oxygen in the sputtering and annealing atmosphere.The optimum conditions are found. Ultraviolet and green emissions of annealed ZnO:Ag films were observed at room temperature.Photoluminescence results show that oxygen in annealing atmosphere reduces the deep-level defects in ZnO:Ag and increases the film quality .

  3. Rapid Deposition of Titanium Oxide and Zinc Oxide Films by Solution Precursor Plasma Spray

    Science.gov (United States)

    Ando, Yasutaka

    In order to develop a high rate atmospheric film deposition process for functional films, as a basic study, deposition of titanium oxide film and zinc oxide film by solution precursor plasma spray (SPPS) was conducted in open air. Consequently, in the case of titanium oxide film deposition, anantase film and amorphous film as well as rutile film could be deposited by varying the deposition distance. In the case of anatase dominant film, photo-catalytic properties of the films could be confirmed by wettability test. In addition, the dye sensitized sollar cell (DSC) using the TiO2 film deposited by this SPPS technique as photo voltaic device generates 49mV in OCV. On the other hand, in the case of zinc oxide film deposition, it was proved that well crystallized ZnO films with photo catalytic properties could be deposited. From these results, this process was found to have high potential for high rate functional film deposition process conducted in the air.

  4. Effect of processing parameters on microstructure of MoS2 ultra-thin films synthesized by chemical vapor deposition method

    Directory of Open Access Journals (Sweden)

    Yang Song

    2015-06-01

    Full Text Available MoS2 ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO3. The ultra-thin layers are characterized by X-ray diffraction (XRD, photoluminescence (PL spectroscopy and atomic force microscope (AFM. Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtained with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS2 thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS2, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS2 atomic layers (1∼10 layers covers an area of more than 2 mm×2 mm.

  5. Effect of In Situ Thermal Annealing Process on Structural, Optical and Electrical Properties of CdSCdTe Thin-Film Solar Cells Fabricated by Pulsed Laser Deposition

    Science.gov (United States)

    Al-mebir, Alaa Ayad Khedhair

    Cadmium Telluride has long been recognized as the second lowest- cost material after Si in the world photovoltaic market, specifically for thin-film solar cells. The two attractive properties of the CdTe are its nearly ideal band gap of ˜1.5 eV for single p-n junction photovoltaic and its high optical absorption coefficient up to 105 cm-1. Therefore, a thickness of ˜1 mum of CdTe can absorb up to 90% of the incident light. The key to high-performance thin film CdTe-based solar cells is controlling microstructure of the CdS/CdTe through obtaining high-quality crystalline CdTe thin films that have low density pinholes and other defects and form high-quality p-n heterojunction interfaces on the CdS or other window layers. Considering these, the relative high temperatures used for CdTe thick film growth may not be suitable in the thin film case due to lack of control in CdTe microstructure evolution. Therefore, development of low-temperature processes for CdTe thin film solar cells is important to achieving a precise control of the CdS/CdTe microstructure and optoelectronic properties. In addition, low temperatures provide benefits in wider selection of substrates especially those for low-cost, flexible solar cells applications. However, the CdS/CdTe solar cells based on thin CdTe films fabricated at low temperature have generally poor performance as a result of increased density of grain boundaries and defects. In order to address this issue, we have developed an in situ thermal annealing process (iTAP) immediately after the CdS/CdTe deposition using Pulsed laser deposition (PLD) at 200 °C and before the common ex situ CdCl2 annealing typically employed for optimization of the CdTe-based solar cells. A systematic study on the microstructure, optical and optoelectronic properties of CdS/CdTe solar cells processed under different iTAP conditions has been carried out. It has been found that these physical properties depend sensitively on the iTAP processing conditions

  6. Thin film zinc oxide deposited by CVD and PVD

    Science.gov (United States)

    Hamelmann, Frank U.

    2016-10-01

    Zinc oxide is known as a mineral since 1810, but it came to scientific interest after its optoelectronic properties found to be tuneable by p-type doping. Since the late 1980’s the number of publications increased exponentially. All thin film deposition technologies, including sol-gel and spray pyrolysis, are able to produce ZnO films. However, for outstanding properties and specific doping, only chemical vapor deposition and physical vapor deposition have shown so far satisfying results in terms of high conductivity and high transparency. In this paper the different possibilities for doping will be discussed, some important applications of doped ZnO thin films will be presented. The deposition technologies used for industrial applications are shown in this paper. Especially sputtering of aluminium doped Zinc Oxide (ZnO:Al or AZO) and LPCVD of boron doped Zinc Oxide (ZnO:B or BZO) are used for the commercial production of transparent conductive oxide films on glass used for thin film photovoltaic cells. For this special application the typical process development for large area deposition is presented, with the important trade-off between optical properties (transparency and ability for light scattering) and electrical properties (conductivity). Also, the long term stability of doped ZnO films is important for applications, humidity in the ambient is often the reason for degradation of the films. The differences between the mentioned materials are presented.

  7. Hard Carbon Films Deposited under Various Atmospheres

    Science.gov (United States)

    Wei, M.-K.; Chen, S.-C.; Wu, T. C.; Lee, Sanboh

    1998-03-01

    Using a carbon target ablated with an XeCl-excimer laser under various gas atmospheres at different pressures, hard carbon was deposited on silicon, iron and tungsten carbide substrates. The hardness, friction coefficient, and wear rate of the film against steel are better than pure substrate material, respectively, so that it has potential to be used as a protective coating for micromechanical elements. The influences of gas pressure, gas atmosphere, and power density of laser irradiation on the thermal stability of film were analyzed by means of Raman-spectroscope, time-of-flight method, and optical emission spectrum. It was found that the film deposited under higher pressure has less diamond-like character. The film deposited under rest gas or argon atmosphere was very unstable and looked like a little graphite-like character. The film deposited at high vacuum (10-5 mbar rest gas) was the most stable and looked like the most diamond-like character. The film deposited at higher power density was more diamond-like than that at lower power density.

  8. Factors controlling the microstructure of Ce0.9Gd0.1O2-δ films in pulsed laser deposition process

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, S.; Döbeli, M.;

    Films of Ce0.9Gd0.1O2-δ(CGO10) are prepared at a range of conditions by pulsed laser deposition (PLD) on a single crystal Si (100) and MgO (100), and on a polycrystalline Pt/MgO (100) substrate. The relationship between the film microstructure, crystallography, chemical composition and PLD...

  9. Self-terminating growth of platinum films by electrochemical deposition.

    Science.gov (United States)

    Liu, Yihua; Gokcen, Dincer; Bertocci, Ugo; Moffat, Thomas P

    2012-12-07

    A self-terminating rapid electrodeposition process for controlled growth of platinum (Pt) monolayer films from a K(2)PtCl(4)-NaCl electrolyte has been developed that is tantamount to wet atomic layer deposition. Despite the deposition overpotential being in excess of 1 volt, Pt deposition was quenched at potentials just negative of proton reduction by an alteration of the double-layer structure induced by a saturated surface coverage of underpotential deposited H (H(upd)). The surface was reactivated for further Pt deposition by stepping the potential to more positive values, where H(upd) is oxidized and fresh sites for the adsorption of PtCl(4)(2-) become available. Periodic pulsing of the potential enables sequential deposition of two-dimensional Pt layers to fabricate films of desired thickness, relevant to a range of advanced technologies.

  10. Process optimization of deposition conditions of PbS thin films grown by a successive ionic layer adsorption and reaction (SILAR) method using response surface methodology

    Science.gov (United States)

    Yücel, Ersin; Yücel, Yasin; Beleli, Buse

    2015-07-01

    In this study, lead sulfide (PbS) thin films were synthesized by a successive ionic layer adsorption and reaction (SILAR) method with different pH, dipping time and dipping cycles. Response surface methodology (RSM) and central composite design (CCD) were successfully used to optimize the PbS films deposition parameters and understand the significance and interaction of the factors affecting the film quality. 5-level-3-factor central composite design was employed to evaluate the effects of the deposition parameters (pH, dipping time and dipping cycles) on the response (the optical band gap of the films). Data obtained from RSM were subjected to the analysis of variance (ANOVA) and analyzed using a second order polynomial equation. The optimal conditions for the PbS films deposition have been found to be: pH of 9.1, dipping time of 10 s and dipping cycles of 10 cycles. The predicted band gap of PbS film was 2.13 eV under the optimal conditions. Verification experiment (2.24 eV) confirmed the validity of the predicted model. The film structures were characterized by X-ray diffractometer (XRD). Morphological properties of the films were studied with a scanning electron microscopy (SEM). The optical properties of the films were investigated using a UV-visible spectrophotometer.

  11. Characteristic Features of the Formation of a Combined Magnetron-Laser Plasma in the Processes of Deposition of Film Coatings

    Science.gov (United States)

    Burmakov, A. P.; Kuleshov, V. N.; Prokopchik, K. Yu.

    2016-09-01

    A block diagram of a facility for combined magnetron-laser deposition of coatings and of the systems of controlling and managing this process is considered. The results of analysis of the influence of the gas medium and of laser radiation parameters on the emission-optical properties of laser plasma are considered. The influence of the laser plasma on the electric characteristics of a magnetron discharge is analyzed. The formation of the laser plasma-initiated pulse arc discharge has been established and the influence of the laser radiation parameters on the electric characteristics of this discharge has been determined. The emission optical spectra of the magnetron discharge plasma and of erosion laser plasma are compared separately and in combination.

  12. Production of HfO2 thin films using different methods:chemical bath deposition, SILAR and sol-gel process

    Institute of Scientific and Technical Information of China (English)

    İ.A.Kariper

    2014-01-01

    Hafnium oxide thin films (HOTFs) were successfully deposited onto amorphous glasses using chemical bath deposition, succes-sive ionic layer absorption and reaction (SILAR), and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300°C in an oven (ambient conditions). After this step, the optical and structural properties of the films pro-duced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffraction (XRD). The opti-cal properties are investigated using the ultraviolet-visible (UV-VIS) spectroscopic technique. The film thickness was measured via atomic force microscopy (AFM) in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy (EDX). The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

  13. Pulsed laser deposition of tantalum pentoxide film

    Science.gov (United States)

    Zhang, J.-Y.; Boyd, I. W.

    We report thin tantalum pentoxide (Ta2O5) films grown on quartz and silicon substrates by the pulsed laser deposition (PLD) technique employing a Nd:YAG laser (wavelength λ=532 nm) in various O2 gas environments. The effect of oxygen pressure, substrate temperature, and annealing under UV irradiation using a 172-nm excimer lamp on the properties of the grown films has been studied. The optical properties determined by UV spectrophotometry were also found to be a sensitive function of oxygen pressure in the chamber. At an O2 pressure of 0.2 mbar and deposition temperatures between 400 and 500 °C, the refractive index of the films was around 2.18 which is very close to the bulk Ta2O5 value of 2.2, and an optical transmittance around 90% in the visible region of the spectrum was obtained. X-ray diffraction measurements showed that the as-deposited films were amorphous at temperatures below 500 °C and possessed an orthorhombic (β-Ta2O5) crystal structure at temperatures above 600 °C. The most significant result of the present study was that oxygen pressure could be used to control the composition and modulate optical band gap of the films. It was also found that UV annealing can significantly improve the optical and electrical properties of the films deposited at low oxygen pressures (<0.1 mbar).

  14. Deposition and Characterization of Zinc Oxide Films

    Directory of Open Access Journals (Sweden)

    Seniye KARAKAYA

    2014-07-01

    Full Text Available Zinc oxide (ZnO is suitable for optoelectronic applications due to its electrical and optical properties. The present work deals with the preparation and characterization of ZnO films deposited by the ultrasonic spray pyrolysis method. The starting solution was zinc acetate. Effects of substrate temperature on films properties have been investigated. Optical properties of the films have been characterized by investigating transmittance, absorbance and photoluminescence (PL spectra. Optical transmission spectrum shows that ZnO films have high transmission (about 80% in visible region for substrate temperatures at 350oC. Surface morphology of the films has also been analyzed by atomic force microscope (AFM. Four probes conductivity measurements have been used for electrical characterization. The resistivity of ZnO films increases with increasing substrate temperatures

  15. Structural and electrical properties of electric field assisted spray deposited pea structured ZnO film

    Science.gov (United States)

    Chaturvedi, Neha; Swami, Sanjay Kumar; Dutta, Viresh

    2016-05-01

    Spray deposition of ZnO film was carried out. The uneven growth of ZnO nanostructures is resulted for spray deposited ZnO film. Application of DC voltage (1000V) during spray deposition provides formation of pea like structures with uniform coverage over the substrate. Electric field assisted spray deposition provides increased crystallinity with reduced resistivity and improved mobility of the ZnO film as compared to spray deposited ZnO film without electric field. This with large area deposition makes the process more efficient than other techniques.

  16. Aerosol deposition of (Cu,Ti) substituted bismuth vanadate films

    Energy Technology Data Exchange (ETDEWEB)

    Exner, Jörg, E-mail: Functional.Materials@Uni-Bayreuth.de [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany); Fuierer, Paul [Materials and Metallurgical Engineering Department, New Mexico Institute of Mining and Technology, Socorro, NM 87801 (United States); Moos, Ralf [University of Bayreuth, Department of Functional Materials, Universitätsstraße 30, 95440 Bayreuth (Germany)

    2014-12-31

    Bismuth vanadate, Bi{sub 4}V{sub 2}O{sub 11}, and related compounds with various metal (Me) substitutions, Bi{sub 4}(Me{sub x}V{sub 1−x}){sub 2}O{sub 11−δ}, show some of the highest ionic conductivities among the known solid oxide electrolytes. Films of Cu and Ti substituted bismuth vanadate were prepared by an aerosol deposition method, a spray coating process also described as room temperature impact consolidation. Resultant films, several microns in thickness, were dense with good adhesion to the substrate. Scanning electron microscopy and high temperature X-ray diffraction were used to monitor the effects of temperature on the structure and microstructure of the film. The particle size remained nano-scale while microstrain decreased rapidly up to 500 °C, above which coarsening and texturing increased rapidly. Impedance measurements of films deposited on inter-digital electrodes revealed an annealing effect on the ionic conductivity, with the conductivity exceeding that of a screen printed film, and approaching that of bulk ceramic. - Highlights: • Cu and Ti doped bismuth vanadate films were prepared by aerosol deposition (AD). • Dense 3–5 μm thick films were deposited on alumina, silicon and gold electrodes. • Annealing of the AD-layer increases the conductivity by 1.5 orders of magnitude. • Effect of temperature on structure and microstructure was investigated.

  17. Deposition of antimony telluride thin film by ECALE

    Institute of Scientific and Technical Information of China (English)

    GAO; Xianhui; YANG; Junyou; ZHU; Wen; HOU; Jie; BAO; Siqian; FAN; Xi'an; DUAN; Xingkai

    2006-01-01

    The process of Sb2Te3 thin film growth on the Pt substrate by electrochemical atomic layer epitaxy (ECALE) was studied. Cyclic voltammetric scanning was performed to analyze the electrochemical behavior of Te and Sb on the Pt substrate. Sb2Te3 film was formed using an automated flow deposition system by alternately depositing Te and Sb atomic layers for 400 circles. The deposited Sb2Te3 films were characterized by XRD, EDX, FTIR and FESEM observation. Sb2Te3 compound structure was confirmed by XRD pattern and agreed well with the results of EDX quantitative analysis and coulometric analysis. FESEM micrographs showed that the deposit was composed of fine nano particles with size of about 20 nm. FESEM image of the cross section showed that the deposited films were very smooth and dense with thickness of about 190 nm. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy, and it was blue shifted in comparison with that of the bulk Sb2Te3 single crystal due to its nanocrystalline microstructure.

  18. Structural characteristics of copper/hydrogenated amorphous carbon composite films prepared by microwave plasma-assisted deposition processes from methane-argon and acetylene-argon gas mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Thiery, F.; Pauleau, Y.; Grob, J.J.; Babonneau, D

    2004-11-01

    Copper/hydrogenated amorphous carbon (Cu/a-C:H) composite films have been deposited on silicon substrates by a hybrid technique combining microwave plasma-assisted chemical vapor deposition and sputter-deposition from methane-argon and acetylene-argon gas mixtures. The major objective of this work was to investigate the effect of the carbon gas precursor on the structural characteristics of Cu/a-C:H composite films deposited at ambient temperature. The major characteristics of CH{sub 4}-argon and C{sub 2}H{sub 2}-argon plasmas were analyzed by Langmuir probe measurements. The composition of films was determined by Rutherford backscattering spectroscopy, energy recoil detection analyses and nuclear reaction analyses. The carbon content in the films was observed to vary in the range 20-77 at.% and 7.5-99 at.% as the CH{sub 4} and C{sub 2}H{sub 2} concentrations in the gas phase increased from 10 to 100%, respectively. The atom number ratio H/C in the films was scattered approximately 0.4 whatever the carbon gas precursor used. The crystallographic structure and the size of copper crystallites incorporated in the a-C were determined by X-ray diffraction techniques. The copper crystallite size decreased from 20 nm in pure copper films to less than 5 nm in Cu/a-C:H films containing more than 40 at.% of carbon. Grazing incidence small angle X-ray scattering measurements were performed to investigate the size distribution and distance of copper crystallites as functions of the deposition parameters. The structural characteristics of copper crystallites were dependent on the hydrocarbon gas precursor used. The crystallite size and the width of the size distribution were homogeneous in films deposited from CH{sub 4}. Copper crystallites with an anisotropic shape were found in films deposited from C{sub 2}H{sub 2}. The major radicals formed in the plasma and condensed on the surface of growing films, namely CH and C{sub 2}H radicals for films produced from CH{sub 4} and C

  19. Iron films deposited on porous alumina substrates

    Science.gov (United States)

    Yamada, Yasuhiro; Tanabe, Kenichi; Nishida, Naoki; Kobayashi, Yoshio

    2016-12-01

    Iron films were deposited on porous alumina substrates using an arc plasma gun. The pore sizes (120 - 250 nm) of the substrates were controlled by changing the temperature during the anodic oxidation of aluminum plates. Iron atoms penetrated into pores with diameters of less than 160 nm, and were stabilized by forming γ-Fe, whereas α-Fe was produced as a flat plane covering the pores. For porous alumina substrates with pore sizes larger than 200 nm, the deposited iron films contained many defects and the resulting α-Fe had smaller hyperfine magnetic fields. In addition, only a very small amount of γ-Fe was obtained. It was demonstrated that the composition and structure of an iron film can be affected by the surface morphology of the porous alumina substrate on which the film is grown.

  20. Sputter deposited Terfenol-D thin films for multiferroic applications

    Directory of Open Access Journals (Sweden)

    K. P. Mohanchandra

    2015-09-01

    Full Text Available In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011 cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10−6.

  1. Sputter deposited Terfenol-D thin films for multiferroic applications

    Science.gov (United States)

    Mohanchandra, K. P.; Prikhodko, S. V.; Wetzlar, K. P.; Sun, W. Y.; Nordeen, P.; Carman, G. P.

    2015-09-01

    In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm) with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011) cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10-6.

  2. Development of ballistic hot electron emitter and its applications to parallel processing: active-matrix massive direct-write lithography in vacuum and thin films deposition in solutions

    Science.gov (United States)

    Koshida, N.; Kojima, A.; Ikegami, N.; Suda, R.; Yagi, M.; Shirakashi, J.; Yoshida, T.; Miyaguchi, H.; Muroyama, M.; Nishino, H.; Yoshida, S.; Sugata, M.; Totsu, K.; Esashi, M.

    2015-03-01

    Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electron source, the alternative lithographic technology is presented based on the two approaches: physical excitation in vacuum and chemical reduction in solutions. The nc-Si cold cathode is a kind of metal-insulator-semiconductor (MIS) diode, composed of a thin metal film, an nc-Si layer, an n+-Si substrate, and an ohmic back contact. Under a biased condition, energetic electrons are uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is available for active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each size: 10×10 μm2, pitch: 100 μm) are fabricated on silicon substrate by conventional planar process, and then every emitter is bonded with integrated complementary metal-oxide-semiconductor (CMOS) driver using through-silicon-via (TSV) interconnect technology. Electron multi-beams emitted from selected devices are focused by a micro-electro-mechanical system (MEMS) condenser lens array and introduced into an accelerating system with a demagnification factor of 100. The electron accelerating voltage is 5 kV. The designed size of each beam landing on the target is 10×10 nm2 in square. Here we discuss the fabrication process of the emitter array with TSV holes, implementation of integrated ctive-matrix driver circuit, the bonding of these components, the construction of electron optics, and the overall operation in the exposure system including the correction of possible aberrations. The experimental results of this mask-less parallel pattern transfer are shown in terms of simple 1:1 projection and parallel lithography under an active-matrix drive scheme. Another application is the use of this emitter as an active electrode supplying highly reducing electrons into solutions. A very small amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven without

  3. Aspects of thin film deposition on granulates by physical vapor deposition

    Science.gov (United States)

    Eder, Andreas; Schmid, Gerwin H. S.; Mahr, Harald; Eisenmenger-Sittner, Christoph

    2016-11-01

    Thin film and coating technology has entered fields which may show significant deviations from classical coating applications where films are deposited on plane, sometimes large substrates. Often surfaces of small and irregularly shaped bodies have to be improved in respect to electrical, thermal or mechanical properties. Film deposition and characterization on such small substrates is not a trivial task. This specially holds for methods based on Physical Vapor Deposition (PVD) processes such as sputter deposition and its ion- and plasma assisted varieties. Due to their line of sight nature a key issue for homogenous films is efficient intermixing. If this problem is mastered, another task is the prediction and determination of the film thickness on single particles as well as on large scale ensembles thereof. In this work a mechanism capable of uniformly coating up to 1000 cm3 of granulate with particle sizes ranging from approx. 10 μm to 150 μm by magnetron sputtering is thoroughly described. A method for predicting the average film thickness on the particles is presented and tested for several differently shaped objects like microspheres, irregular grains of sinter powder or micro diamonds. For assessing the film thickness on single particles as well as on particle ensembles several complementary methods based on optics, X-ray analysis and gravimetry are employed. Their respective merits and limitations are discussed. Finally an outlook on adapting the described technology for surface modification by plasma based reactive and non-reactive processes is given.

  4. Laser deposition of bimetallic island films

    Science.gov (United States)

    Kucherik, A. O.; Arakelyan, S. M.; Kutrovskaya, S. V.; Osipov, A. V.; Istratov, A. V.; Vartanyan, T. A.; Itina, T. E.

    2016-08-01

    In this work the results of a bimetallic Au-Ag structure deposition from the colloidal system by nanosecond laser radiation are presented. The formation of the extended arrays of gold and silver nanoparticles with controlled morphology is examined. We report the results of formation bimetallic islands films with various electrical and optical properties. The changes in the optical properties of the obtained thin films are found to depend on their morphology.

  5. Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Jhang, Pei-Ci; Lu, Chi-Pin; Shieh, Jung-Yu; Yang, Ling-Wu; Yang, Tahone; Chen, Kuang-Chao; Lu, Chih-Yuan

    2017-07-01

    An N-rich silicon nitride film, with a lower refractive index (RI) than the stoichiometric silicon nitride (RI = 2.01), was deposited by alternating the exposure of dichlorosilane (DCS, SiH2Cl2) and that of ammonia (NH3) in a plasma-enhanced atomic layer deposition (PEALD) process. In this process, the plasma ammonia was easily decomposed to reactive radicals by RF power activating so that the N-rich silicon nitride was easily formed by excited ammonia radicals. The growth kinetics of N-rich silicon nitride were examined at various deposition temperatures ranging from 400 °C to 630 °C; the activation energy (Ea) decreased as the deposition temperature decreased below 550 °C. N-rich silicon nitride film with a wide range of values of refractive index (RI) (RI = 1.86-2.00) was obtained by regulating the deposition temperature. At the optimal deposition temperature, the effects of RF power, NH3 flow rate and NH3 flow time were on the characteristics of the N-rich silicon nitride film were evaluated. The results thus reveal that the properties of the N-rich silicon nitride film that was formed by under plasma-enhanced atomic layer deposition (PEALD) are dominated by deposition temperature. In charge trap flash (CTF) study, an N-rich silicon nitride film was applied to MAONOS device as a charge-trapping layer. The films exhibit excellent electron trapping ability and favor a fresh cell data retention performance as the deposition temperature decreased.

  6. Two-dimensional recrystallisation processes of nanometric vanadium oxide thin films grown by atomic layer chemical vapor deposition (ALCVD) evidenced by AFM

    Energy Technology Data Exchange (ETDEWEB)

    Groult, H. [Laboratoire Liquides Ioniques et Interfaces Chargees (CNRS-UMR 7612), Universite P and M Curie, 4 Place Jussieu, 75252 Paris Cedex 05 (France)]. E-mail: groult@ccr.jussieu.fr; Balnois, E. [Laboratoire Liquides Ioniques et Interfaces Chargees (CNRS-UMR 7612), Universite P and M Curie, 4 Place Jussieu, 75252 Paris Cedex 05 (France); Laboratoire Polymeres, Proprietes aux Interfaces et Composites, Universite de Bretagne Sud, rue de St. Maude, BP92116, 56321 Lorient Cedex (France); Mantoux, A. [Laboratoire Liquides Ioniques et Interfaces Chargees (CNRS-UMR 7612), Universite P and M Curie, 4 Place Jussieu, 75252 Paris Cedex 05 (France); Le Van, K. [Laboratoire Liquides Ioniques et Interfaces Chargees (CNRS-UMR 7612), Universite P and M Curie, 4 Place Jussieu, 75252 Paris Cedex 05 (France); Lincot, D. [Laboratoire d' Electrochimie et de Chimie Analytique (UMR CNRS 7575), ENSCP, 11 rue P and M Curie, 75231 Paris Cedex 05 (France)

    2006-06-15

    The influence of thermal annealing on the morphology and structure of nanometer range thickness vanadium oxide films deposited by ALCVD on silicon substrate was investigated by AFM. The appearance of crystalline centres with typical rectangular V{sub 2}O{sub 5} plates was clearly observed from 400 deg. C. Furthermore, spectacular 2D-reorganisation phenomenon with increasing temperature was pointed out since, initial circular particles change to elongated ones with a rectangular shape with increasing temperature. This reorganisation process results from an increase in the high surface atomic mobilities with increasing temperature. The growth of V{sub 2}O{sub 5} particles in the ab-plane occurs preferentially along the b-direction for which the atoms density is higher, in good agreement with results previously deduced from XRD analyses. The latter show limitation of the coherence domains values along the a-axis for temperatures higher than 450 deg. C.

  7. Effect of Processing on the Electrical Properties of Spray-Deposited SnO2:F Thin Films

    Directory of Open Access Journals (Sweden)

    Shadia J. Ikhmayies

    2008-01-01

    Full Text Available Highly transparent SnO2:F thin films were produced by the Spray Pyrolysis (SP technique to be used as forcontacts in the home made CdS/CdTe solar cells. Films of thickness 100-200 nm were prepared at substrate temperatures in the range 380-480°C. To improve the electrical properties of the films, annealing in nitrogen atmosphere at 400°C and etching by HNO3 were tried. The resistivity of the films was calculated from the I-V plots which are all linear. It had significantly decreased after annealing, but slightly decreased after HNO3-etching alone. The improvement in the electrical properties was accompanied by an improvement in the X-Ray Diffraction (XRD spectra and an increase in the grain size as shown by the scanning electron microscope (SEM images. The annealing period needed to obtain the lowest resistivity was longer for films prepared at lower substrate temperatures.

  8. Effects of Power Density and Post Annealing Process on the Microstructure and Wettability of TiO2 Films Deposited by Mid-frequency Magnetron Reactive Sputtering

    Institute of Scientific and Technical Information of China (English)

    Ying CUI; Hao DU; Jinquan XIAO; Lishi WEN

    2008-01-01

    The relationship of "preparation parameters-microstructures-wettability" of TiO2 films was reported. In this work, TiO2 films were deposited onto glass and silicon substrates by using mid-frequency dual magnetron sputtering technique at ambient temperature with various power densities and deposition time. After de- position, the films were heat treated at different annealing temperatures. X-ray diffraction (XRD), Raman spectroscopy, and field-emission scanning electron microscopy (FE-SEM) were utilized to characterize TiO2 films. The wettability of the films was evaluated by water contact angle measurement. The phase transition temperature of TiO2 films depended on the power density. It was demonstrated that wettability was strongly structure dependent and the film with the thickness of 610 nm (the power density was 2.22 W/cm2) showed the lowest contact angle (8°). It can be concluded that smaller crystallite size, the rutile phase with (110) face being parallel to the surface, and tensile stress favored the hydrophilicity of the TiO2 films.

  9. The effect of processing conditions on the structural morphology and physical properties of ZnO and CdS thin films produced via sol-gel synthesis and chemical bath deposition techniques

    Science.gov (United States)

    Salam, Shahzad; Islam, Mohammad; Alam, Mahboob; Akram, Aftab; Ikram, Mujtaba; Mahmood, Asif; Khan, Majid; Mujahid, Mohammad

    2011-12-01

    Cadmium sulfide (CdS) and zinc oxide (ZnO) are used in thin film solar cells as buffer layer and transparent conducting oxide, respectively. The effect of annealing conditions on the morphology and physical properties of CdS and ZnO films prepared using chemical bath deposition and sol-gel synthesis techniques, respectively, was investigated. CdS films obtained from the chemical bath deposition (CBD) process were found to be polycrystalline with dense granular morphology. Electrical characterization of the films annealed at 400 °C for 10 min yielded values of 2.2×10-3 Ω cm and 8.3×1012 cm-3 for resistivity and carrier concentration, respectively. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) studies of intrinsic zinc oxide (i-ZnO) films revealed flake-like morphology and transformation of the as-deposited amorphous structure into a hexagonal wurtzite crystal structure upon annealing at 500 °C for 2 h. Optical and electrical characterization results showed that such films had ~80% transmittance and resistivity values as low as 6.4×102 Ω cm. These films are being explored for fabrication and testing of copper-indium-gallium-(di)selenide (CIGS) thin film solar cells obtained from simple, cost-effective, solution-based synthesis routes.

  10. Impact of In doping on GeTe phase-change materials thin films obtained by means of an innovative plasma enhanced metalorganic chemical vapor deposition process

    Science.gov (United States)

    Szkutnik, P. D.; Aoukar, M.; Todorova, V.; Angélidès, L.; Pelissier, B.; Jourde, D.; Michallon, P.; Vallée, C.; Noé, P.

    2017-03-01

    We investigated the deposition and the phase-change properties of In-doped GeTe thin films obtained by plasma enhanced metalorganic chemical vapor deposition and doped with indium using a solid delivery system. The sublimated indium precursor flow rate was calculated as a function of sublimation and deposition parameters. Indium related optical emission recorded by means of optical emission spectroscopy during deposition plasma allowed proposing the dissociation mechanisms of the [In(CH3)2N(CH3)2]2 solid precursor. In particular, using an Ar + H2 + NH3 deposition plasma, sublimated indium molecules are completely dissociated and do not induce by-product contamination by addition of nitrogen or carbon in the films. X-ray photoelectron spectroscopy evidences the formation of In-Te bonds in amorphous as-deposited In-doped GeTe films. The formation of an InTe phase after 400 °C annealing is also evidenced by means of X-ray diffraction analysis. The crystallization temperature Tx, deduced from monitoring of optical reflectivity of In-doped GeTe films with doping up to 11 at. % slightly varies as a function of the In dopant level with a decrease of Tx down to a minimum value for an In doping level of about 6-8 at. %. In this In doping range, the structure of crystallized In-GeTe films changes and is dominated by the presence of a crystalline In2Te3 phase. Finally, the Kissinger activation energy for crystallization Ea is showing to monotonically decrease as the indium content in the GeTe film is increased indicating a promising effect of In doping on crystallization speed in memory devices while keeping a good thermal stability for data retention.

  11. Fabrication of YBCO/YSZ and YBCO/MgO thick films using electrophoretic deposition with top-seeded melt growth process

    Institute of Scientific and Technical Information of China (English)

    Zhu Ya-Bin; Zhou Yue-Liang; Wang Shu-Fang; Liu Zhen; Zhang Qin; Chen Zheng-Hao; Lü Hui-Bin; Yang Guo-Zhen

    2004-01-01

    Superconducting thick films were grown on single crystals MgO and YSZ by electrophoretic deposition with Y2BaCuOs(Y211) addition. YBCO thick films were then accomplished by sintering the precursor films above the peritectic temperature. Single crystals of MgO (3×3×0.5mm3) were used as top-seed to control crystal structure of the thick films. As shown by scanning electron microscopy, the morphologies of YBCO/YSZ and YBCO/MgO thick films are spherulitic texture and platelet type. The critical temperature is ~89 K for the YBCO/YSZ thick film; the onset transition temperature is 86.4 K and the transition width is ~3 K for YBCO/MgO thick film. The critical current densities (as determined by Bean model) are, in A/cm2, 3870 (77K) for YBCO/YSZ thick films and 2399 (77K) for YBCO/MgO thick films, which are comparable to the best Jc reported of the thick films prepared by the same method.

  12. Properties of alumina films by atmospheric pressure metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin alumina films were deposited at low temperatures (290–420°C) on stainless steel, type AISI 304. The deposition process was carried out in nitrogen by metal-organic chemical vapour deposition using aluminum tri-sec-butoxide. The film properties including the protection of the underlying substrat

  13. Microwave annealing effects on ZnO films deposited by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    Zhao Shirui; Dong Yabin; Yu Mingyan; Guo Xiaolong; Xu Xinwei; Jing Yupeng; Xia Yang

    2014-01-01

    Zinc oxide thin films deposited on glass substrate at 150 ℃ by atomic layer deposition were annealed by the microwave method at temperatures below 500 ℃.The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence.The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films.The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass.

  14. Influence of process parameters on atomic layer deposition of ZrO{sub 2} thin films from CpZr(NMe{sub 2}){sub 3} and H{sub 2}O

    Energy Technology Data Exchange (ETDEWEB)

    Aarik, Lauri, E-mail: lauri.aarik@ut.ee [University of Tartu, Institute of Physics, Ravila 14C, 50411 Tartu (Estonia); Alles, Harry; Aidla, Aleks; Kahro, Tauno [University of Tartu, Institute of Physics, Ravila 14C, 50411 Tartu (Estonia); Kukli, Kaupo [University of Tartu, Institute of Physics, Ravila 14C, 50411 Tartu (Estonia); University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Niinistö, Jaakko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mändar, Hugo; Tamm, Aile; Rammula, Raul [University of Tartu, Institute of Physics, Ravila 14C, 50411 Tartu (Estonia); Sammelselg, Väino [University of Tartu, Institute of Physics, Ravila 14C, 50411 Tartu (Estonia); University of Tartu, Institute of Chemistry, Ravila 14A, 50411 Tartu (Estonia); Aarik, Jaan [University of Tartu, Institute of Physics, Ravila 14C, 50411 Tartu (Estonia)

    2014-08-28

    Atomic layer deposition of ZrO{sub 2} films from tris(dimethylamino)cyclopentadienylzirconium CpZr(NMe{sub 2}){sub 3} and H{sub 2}O, was investigated using real-time characterization of the growth process and post-growth measurements of the films. Self-limited nature of the deposition process was observed at substrate temperatures ranging from 120 to 350 °C. In this temperature range growth rate of 0.08–0.1 nm per cycle was obtained on silicon substrates. The films deposited on silicon substrates at 200 °C and higher temperatures contained tetragonal and monoclinic phases of ZrO{sub 2}. The phase composition of the films depended on the deposition temperature as well as on the film thickness. The concentration of carbon residues decreased with increasing deposition temperature and did not exceed 0.9 at.% in the films deposited at 250 °C and higher temperatures. The refractive indices and densities of films grown from CpZr(NMe{sub 2}){sub 3} and H{sub 2}O at 250–350 °C ranged from 2.15 to 2.20 (at a wavelength of 633 nm) and 5.6 to 6.0 g/cm{sup 3}, respectively, being close to the highest values obtained for films deposited from ZrCl{sub 4} and H{sub 2}O. The former process ensured, however, more uniform nucleation of ZrO{sub 2} on graphene than the latter process did. - Highlights: • Thin films were grown from CpZr(NMe{sub 2}){sub 3} and H{sub 2}O on Si substrates by ALD. • The growth of ZrO{sub 2} was obtained at temperatures 120–350 °C. • Growth rates up to 0.1 nm per cycle were observed. • Films with refractive indices up to 2.2 at 633 nm were obtained.

  15. Glancing angle deposition of thin films engineering the nanoscale

    CERN Document Server

    Hawkeye, Matthew M; Brett, Michael J

    2014-01-01

    This book provides a highly practical treatment of GLAD technology, gathering existing procedures, methodologies, and experimental designs into a single, cohesive volume which will be useful both as a ready reference for those in the field and as a definitive guide for those entering it. It covers: History and development of GLAD techniquesProperties and Characterization of GLAD fabricated filmsDesign and engineering of optical GLAD films including fabrication and testingPost-deposition processing and integrationDeposition systems for GLAD fabrication Also includes a patent survey of relevant literature and a survey of GLAD's wide range of material properties and diverse applications.

  16. Ultraviolet laser deposition of graphene thin films without catalytic layers

    KAUST Repository

    Sarath Kumar, S. R.

    2013-01-09

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  17. Polyelectrolyte Coacervates Deposited as High Gas Barrier Thin Films.

    Science.gov (United States)

    Haile, Merid; Sarwar, Owais; Henderson, Robert; Smith, Ryan; Grunlan, Jaime C

    2017-01-01

    Multilayer coatings consisting of oppositely charged polyelectrolytes have proven to be extraordinarily effective oxygen barriers but require many processing steps to fabricate. In an effort to prepare high oxygen barrier thin films more quickly, a polyelectrolyte complex coacervate composed of polyethylenimine and polyacrylic acid is prepared. The coacervate fluid is applied as a thin film using a rod coating process. With humidity and thermal post-treatment, a 2 µm thin film reduces the oxygen transmission rate of 0.127 mm poly(ethylene terephthalate) by two orders of magnitude, rivalling conventional oxygen barrier technologies. These films are fabricated in ambient conditions using low-cost, water-based solutions, providing a tremendous opportunity for single-step deposition of polymeric high barrier thin films.

  18. Pulsed laser deposition of nanostructured Ag films

    Energy Technology Data Exchange (ETDEWEB)

    Donnelly, Tony [School of Physics, Trinity College, Dublin 2 (Ireland); Doggett, Brendan [School of Physics, Trinity College, Dublin 2 (Ireland); Lunney, James G. [School of Physics, Trinity College, Dublin 2 (Ireland)]. E-mail: jlunney@tcd.ie

    2006-04-30

    Ultra-thin (0.5-5 nm) films of Ag have been prepared by pulsed laser deposition in vacuum using a 26 ns KrF excimer laser at 1 J cm{sup -2}. The deposition was controlled using a Langmuir ion probe and a quartz crystal thickness monitor. Transmission electron microscopy showed that the films are not continuous, but are structured on nanometer size scales. Optical absorption spectra showed the expected surface plasmon resonance feature, which shifted to longer wavelength and increased in strength as the equivalent film thickness was increased. It is shown that Maxwell Garnett effective medium theory can be used to calculate the main features of optical absorption spectra.

  19. Electron-beam deposition of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

    2013-06-15

    Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

  20. Electroless deposition, post annealing and characterization of nickel films on silicon

    Indian Academy of Sciences (India)

    Subir Sabharwal; Siddharth Palit; R B Tokas; A K Poswal; Sangeeta

    2008-10-01

    Electroless deposition of nickel (EN) films on -type silicon has been investigated under different process conditions. The interface between the film and substrate has been characterized for electrical properties by probing the contact resistances. X-ray diffraction and atomic force microscopy have been performed to obtain information about the structural and morphological details of the films. As a comparative study, nickel films have also been sputter deposited on silicon substrates. An as-deposited electroless film is observed to form non-ohmic contact while in a sputtered film prepared without the application of substrate heating, the formation of metal–insulating–semiconductor type junction is seen.

  1. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  2. Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films with k = 2.0

    Science.gov (United States)

    Kimura, Yosuke; Ishikawa, Dai; Nakano, Akinori; Kobayashi, Akiko; Matsushita, Kiyohiro; de Roest, David; Kobayashi, Nobuyoshi

    2012-05-01

    We investigated the effects of UV-assisted restoration on porous plasma-enhanced chemical vapor deposition (PECVD) SiOCH films with k = 2.0 and 2.3 having high porosities. By applying the UV-assisted restoration to O2-plasma-damaged films with k = 2.0 and 2.3, the recovery of the k-value was observed on the k = 2.3 film in proportion to -OH group reduction. However, the k = 2.0 film did not show recovery in spite of -OH group reduction. We found that hydrocarbon content in the k = 2.0 film was significantly increased by the UV-assisted restoration compared with the k = 2.3 film. According to these findings, we optimized the UV-assisted restoration to achieve improved controllability of the hydrocarbon uptake in the k = 2.0 film and confirmed the recovery of the k-value for O2-plasma-damaged film. Thus, adjusting the hydrocarbon uptake was crucial for restoring extremely porous SiOCH film.

  3. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  4. Metallic Tungsten Nanostructures and Highly Nanostructured Thin Films by Deposition of Tungsten Oxide and Subsequent Reduction in a Single Hot-Wire CVD Process

    NARCIS (Netherlands)

    Harks, P.P.R.M.L.; Houweling, Z.S.; de Jong, M.M.; Kuang, Y; Geus, J.W.; Schropp, R.E.I.

    2012-01-01

    The synthesis of metallic tungsten nanostructures and highly nanostructured thin films is presented. Crystalline tungsten oxide nanostructures are deposited on glassy carbon substrates kept at 700 100 8C by oxidizing resistively heated tungsten filaments in an air flow under subatmospheric pressures

  5. Poly-para-xylylene thin films: A study of the deposition chemistry, kinetics, film properties, and film stability

    Science.gov (United States)

    Fortin, Jeffrey Bernard

    Poly-para-xylylene, or parylene, thin films are chemically vapor deposited (CVD), conformal, pin-hole free polymeric thin films. They have found many industrial uses since there invention in 1947 and continue to find new applications in micro-electronics, biotechnology, and micro-electro-mechanical systems. In this study the deposition chemistry, deposition kinetics, film properties, and film stability were investigated. A differentially pumped quadrupole mass spectrometer was used to analyze the vapor species present during the CVD process. The identity of dimer contamination and its impact on the CVD process and film properties was studied. The quantitative conversion of dimer to monomer was investigated and it was found that conversion begins at around 385°C and by 565°C 100% conversion is obtained. The kinetics of the CVD process was analyzed for a range of substrate temperatures and chamber pressures. A new kinetic model based on a two-step adsorption was developed and fit the kinetic data well. This model should be appropriate for use with all parylene family polymers. Many of the properties of the films deposited in this study were analyzed. This includes a detailed study of surface morphology using atomic force microscopy which shows the interface width increases as a power law of film thickness. Other properties analyzed were the thermal stability, electrical properties, index of refraction, birefringence, hardness, and elastic modulus. The effect of ultraviolet (UV) radiation of lambda ≥ 250 nm on the thermal stability, electrical, and optical properties of thin parylene films was studied. The thermal stability and electrical properties of UV treated films were seen to deteriorate as the radiation dose increased. The stability of parylene thin films receiving plasma etching was analyzed. The dielectric constant, dissipation factor, and leakage current of plasma etched thin parylene films were investigated and found to be stable for the range of

  6. Fundamental Mechanisms of Roughening and Smoothing During Thin Film Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Headrick, Randall [Univ. of Vermont, Burlington, VT (United States)

    2016-03-18

    In this research program, we have explored the fundamental limits for thin film deposition in both crystalline and amorphous (i.e. non-crystalline) materials systems. For vacuum-based physical deposition processes such as sputter deposition, the background gas pressure of the inert gas (usually argon) used as the process gas has been found to be a key variable. Both a roughness transition and stress transition as a function of pressure have been linked to a common mechanism involving collisions of energetic particles from the deposition source with the process inert gas. As energetic particles collide with gas molecules in the deposition process they lose their energy rapidly if the pressure (and background gas density) is above a critical value. Both roughness and stress limit important properties of thin films for applications. In the area of epitaxial growth we have also discovered a related effect; there is a critical pressure below which highly crystalline layers grow in a layer-by-layer mode. This effect is also though to be due to energetic particle thermalization and scattering. Several other important effects such as the observation of coalescence dominated growth has been observed. This mode can be likened to the behavior of two-dimensional water droplets on the hood of a car during a rain storm; as the droplets grow and touch each other they tend to coalesce rapidly into new larger circular puddles, and this process proceeds exponentially as larger puddles overtake smaller ones and also merge with other large puddles. This discovery will enable more accurate simulations and modeling of epitaxial growth processes. We have also observed that epitaxial films undergo a roughening transition as a function of thickness, which is attributed to strain induced by the crystalline lattice mismatch with the substrate crystal. In addition, we have studied another physical deposition process called pulsed laser deposition. It differs from sputter deposition due to the

  7. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

    OpenAIRE

    2013-01-01

    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  8. Silicon carbide and other films and method of deposition

    Science.gov (United States)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy (Inventor)

    2011-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  9. Pulsed laser deposition of ferroelectric thin films

    Science.gov (United States)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  10. Fabrication and characterization of vacuum deposited fluorescein thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jalkanen, Pasi, E-mail: pasi.jalkanen@gmail.co [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kulju, Sampo, E-mail: sampo.j.kulju@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Arutyunov, Konstantin, E-mail: konstantin.arutyunov@jyu.f [University of Jyvaeskylae, Department of Physics, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Antila, Liisa, E-mail: liisa.j.antila@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Myllyperkioe, Pasi, E-mail: pasi.myllyperkio@jyu.f [University of Jyvaeskylae, Department of Chemistry, Nanoscience center (NSC) P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Ihalainen, Teemu, E-mail: teemu.o.ihalainen@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland); Kaeaeriaeinen, Tommi, E-mail: tommi.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Kaeaeriaeinen, Marja-Leena, E-mail: marja-leena.kaariainen@lut.f [Lappeenranta University of Technology, ASTRal, P.O. Box 181, FI-50101 Mikkeli (Finland); Korppi-Tommola, Jouko, E-mail: jouko.korppi-tommola@jyu.f [University of Jyvaeskylae, Department of Biology, Nanoscience center (NSC), P.O. Box 35, FI-40014 Jyvaeskylae (Finland)

    2011-03-31

    Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic devices. Thin films of fluorescein were deposited on glass, fluorine-tin-oxide (FTO) coated glass with and without atomically layer deposited (ALD) nanocrystalline 20 nm thick anatase TiO{sub 2} coating. Surface topology, absorption and emission spectra of the films depend on their thickness and the material of supporting substrate. On a smooth glass surface the dye initially forms islands before merging into a uniform layer after 5 to 10 monolayers. On FTO covered glass the absorption spectra are similar to fluorescein solution in ethanol. Absorption spectra on ALD-TiO{sub 2} is red shifted compared to the film deposited on bare FTO. The corresponding emission spectra at {lambda} = 458 nm excitation show various thickness and substrate dependent features, while the emission of films deposited on TiO{sub 2} is quenched due to the effective electron transfer to the semiconductor conduction band.

  11. Piezoelectric film electro-deposition for optical fiber sensor with ZnO coating

    Institute of Scientific and Technical Information of China (English)

    Li Zhou; Ping Gu; Ya Zhou

    2008-01-01

    The piezoelectric film electro-deposition for optical fiber sensor with ZnO coating is studied. The zinc oxide plating film is made on the copper surface directly by cathodic electro-deposition in the Zn(NO3)2 single salt aqueous solution systems. The influences of main experimental conditions on the properties of ZnO thin film in the electro-deposition processes are analyzed and a stable, practical and economic technique is obtained.

  12. Pulsed laser deposition of pepsin thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kecskemeti, G. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary)]. E-mail: kega@physx.u-szeged.hu; Kresz, N. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary); Smausz, T. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Hopp, B. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Nogradi, A. [Department of Ophthalmology, University of Szeged, H-6720, Szeged, Koranyi fasor 10-11 (Hungary)

    2005-07-15

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ({lambda} = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm{sup 2}. The pressure in the PLD chamber was 2.7 x 10{sup -3} Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm{sup 2}. The protein digesting capacity of the transferred pepsin was tested by adapting a modified 'protein cube' method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  13. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  14. The influence of methanol addition during the film growth of SnO 2 by atmospheric pressure chemical vapor deposition

    NARCIS (Netherlands)

    Volintiru, I.; Graaf, A. de; Deelen, J. van; Poodt, P.W.G.

    2011-01-01

    Undoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor from a water/tin tetrachloride mixture. By adding methanol during the deposition process the film electrical properties change significantly: ten times more conductive SnO 2 films are o

  15. High quality plasma-enhanced chemical vapor deposited silicon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Cotler, T.J.; Chapple-Sokol, J. (IBM General Technology Division, Hopewell Junction, NY (United States))

    1993-07-01

    The qualities of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films can be improved by increasing the deposition temperature. This report compares PECVD silicon nitride films to low pressure chemical vapor deposited (LPCVD) films. The dependence of the film properties on process parameters, specifically power and temperature, are investigated. The stress is shown to shift from tensile to compressive with increasing temperature and power. The deposition rate, uniformity, wet etch rate, index of refraction, composition, stress, hydrogen content, and conformality are considered to evaluate the film properties. Temperature affects the hydrogen content in the films by causing decreased incorporation of N-H containing species whereas the dependence on power is due to changes in the gas-phase precursors. All PECVD film properties, with the exception of conformality, are comparable to those of LPCVD films.

  16. Influence of selenium evaporation temperature on the structure of Cu2ZnSnSe4 thin film deposited by a co-evaporation process

    Science.gov (United States)

    Ding, Sun; Shengzhi, Xu; Li, Zhang; Ze, Chen; Yang, Ge; Ning, Wang; Xuejiao, Liang; Changchun, Wei; Ying, Zhao; Xiaodan, Zhang

    2015-04-01

    Cu2ZnSnSe4 (CZTSe) thin film solar cells have been fabricated using a one-step co-evaporation technique. The structural properties of polycrystalline CZTSe films deposited at different selenium evaporation temperatures (TSe) have been investigated using X-ray diffraction spectra, scanning electron microscopy, and atomic force microscopy. A relationship between TSe and the secondary phases deposited in the initial stage is established to explain the experimental observations. The Se flux is not necessarily increased too much to reduce Sn loss and the consumption of Se during fabrication could also be reduced. The best solar cell, with an efficiency of 2.32%, was obtained at a medium TSe of 230 °C (active area 0.34 cm2). Project supported by the Specialized Research Fund for the PhD Program of Higher Education (No. 20120031110039).

  17. Nanoparticle formation and thin film deposition in aniline containing plasmas

    Science.gov (United States)

    Pattyn, Cedric; Dias, Ana; Hussain, Shahzad; Strunskus, Thomas; Stefanovic, Ilija; Boulmer-Leborgne, Chantal; Lecas, Thomas; Kovacevic, Eva; Berndt, Johannes

    2016-09-01

    This contribution deals with plasma based polymerization processes in mixtures of argon and aniline. The investigations are performed in a capacitively coupled RF discharge (in pulsed and continuous mode) and concern both the observed formation of nanoparticles in the plasma volume and the deposition of films. The latter process was used for the deposition of ultra-thin layers on different kind of nanocarbon materials (nanotubes and free standing graphene). The analysis of the plasma and the plasma chemistry (by means of mass spectroscopy and in-situ FTIR spectroscopy) is accompanied by several ex-situ diagnostics of the obtained materials which include NEXAFS and XPS measurements as well as Raman spectroscopy and electron microscopy. The decisive point of the investigations concern the preservation of the original monomer structure during the plasma polymerization processes and the stability of the thin films on the different substrates.

  18. Effect of adding sorbitol to the electroplating solution on the process of depositing lead on copper and the morphology of the film produced

    Science.gov (United States)

    Siqueira, J. L. P.; Carlos, I. A.

    The electrodeposition of lead on to a copper substrate from a plumbite solution, 0.1 M Pb(NO 3) 2 + 0.2 M sorbitol + NaOH, was investigated over a range of concentrations of the hydroxide. Interactions between the copper electrode surface and the lead deposit were investigated by the voltammetric technique. From these experiments, it was concluded that underpotential deposition (upd) of lead does not occur on copper and that lead nucleation occurs as soon as deposition is operative from -0.78 V. Energy-dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM) of the lead films corroborates this result. Lead films obtained at -0.78 and -0.90 V were adherent and could be used as a support in battery plates, but this adhesion of lead to copper cannot be attributed to upd. SEM analysis showed that films produced at potentials down to -0.90 V were smooth and that this is the critical potential for a transition from dense to pyramidal or dendritic crystals patterns. The dendritic crystallites can be transformed into a high-purity lead powder.

  19. Dependence of electro-optical properties on the deposition conditions of chemical bath deposited CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dona, J.M.; Herrero, J. [CIEMAT, Madrid (Spain). Inst. de Energias Renovables

    1997-11-01

    Lately, there has been a sharp increase in the publication of papers on chemical bath deposition of CdS thin films and related materials due to successful results obtained using this method to fabricate CdS thin-film buffer layers for CuInSe{sub 2}- and CdTe-based polycrystalline thin-film solar cells. Generally, these papers focus on previously proposed methods of studying film characteristics without a systematic study of the influence of deposition conditions on film characteristics. In this paper the authors present an exhaustive study of the chemical bath-deposited CdS thin films electro-optical properties dependence on deposition variables. The authors propose not only a set of conditions for obtaining CdS thin films by this method but additionally, suitable deposition process conditions for certain application requirements, such as buffer layers for thin-film solar cells. The observed electro-optical characteristics dependence on the deposition variables corroborates the chemical mechanism that they proposed previously for this process.

  20. Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham; Nikzad, Shouleh [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (United States)

    2016-01-15

    Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

  1. Optical monitoring of surface processes relevant to thin film growth by chemical vapour deposition Oxidation; Surface degradation

    CERN Document Server

    Simcock, M N

    2002-01-01

    This thesis reports on the investigation of the use of reflectance anisotropy spectroscopy (RAS) as an in-situ monitor for the preparation and oxidation of GaAs(100) c(4x4) surfaces using a CVD 2000 MOCVD reactor. These surfaces were oxidised using air. It was found that it was possible to follow surface degradation using RA transients at 2.6eV and 4eV. From this data it was possible to speculate on the nature of the surface oxidation process. A study was performed into the rate of surface degradation under different concentrations of air, it was found that the relation between the air concentration and the surface degradation was complicated but that the behaviour of the first third of the degradation approximated a first order behaviour. An estimation of the activation energy of the process was then made, and an assessment of the potential use of the glove-box for STM studies which is an integral part of the MOCVD equipment was also made. Following this, a description is given of the construction of an inte...

  2. Processing of PbTiO{sub 3} and Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} thin films by novel single-solid-source metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lu, P.; Li, H.; Sun, S. [New Mexico Inst. of Mining and Technology, Socorro, NM (United States). Dept. of Materials Science and Engineering; Tuttle, B. [Sandia National Labs., Albuquerque, NM (United States)

    1997-06-01

    Ferroelectric PbTiO{sub 3} (PT) and Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT) thin films have been deposited on (100) MgO and (111) Pt/SiO{sub 2}/(100)Si substrates by using a novel single-solid-source metalorganic chemical vapor deposition (MOCVD) technique. The new technique uses a powder delivery system to deliver the mixed precursor powders directly into a hot vaporizer from room temperature, therefore, avoiding any problems associated with polymerization or decomposition of the precursors before evaporation. The technique simplifies MOCVD processing significantly and can improve process reliability and reproducibility. The deposited PT and PZT films have a perovskite structure and are highly oriented with respect to the substrate. With improvement of process control, systematic studies of film evolution under various growth conditions have been carried out. Effects of substrate, substrate temperature, system vacuum, and precursor ratios in the mixture on film microstructure and properties will be presented in this paper.

  3. Superconducting MgB2 Thin Films with Tc ≈ 39 K Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    王淑芳; 戴守愚; 周岳亮; 陈正豪; 崔大复; 许佳迪; 何萌; 吕惠宾; 杨国桢

    2001-01-01

    Superconducting MgB2 thin films were fabricated on Al2 O3 (0001) substrates under ex situ processing conditions.Boron thin films were deposited by pulsed laser deposition followed by a post-annealing process. Resistance measurements of the deposited MgB2 films show Tc of ~39 K, while scanning electron microscopy and x-ray vdiffraction analysis indicate that the films consist of well-crystallized grains with a highly c-axis-oriented structure.

  4. Preparation of CoP films by ultrasonic electroless deposition at low initial temperature

    Institute of Scientific and Technical Information of China (English)

    Yundan Yu; Zhenlun Song; Hongliang Ge; Guoying Wei

    2014-01-01

    Electroless deposition technology has been considered as a kind of common ways to obtain cobalt alloy films. However, in order to get cobalt alloy films, high temperature (353 K) is necessary during the electroless deposition process which will increase costs and energy consumption. Ultrasonic was introduced during electroless plating process to obtain cobalt alloy films at lower initial temperature. It was found that the cobalt thin films could be prepared at lower initial temperature (323 K) with the introduction of ultrasonic. Therefore, different powers of ultrasonic were applied during the electroless deposition process to prepare CoP thin films on copper substrates from an alkaline bath in this investigation. The effects of different powers of ultrasonic on deposition rate, surface morphology, anticorrosion performance and magnetic property of films were studied. It was found that the deposition rate increased gradually with the rise in ultrasonic powers due to cavitation phenomenon. All the CoP films presented the typical spherical nodular structures with the impact of ultrasonic. Smaller and regular shaped structures could be observed when the films were deposited with higher power of ultrasonic which contributed directly to enhancement of anticorrosion performance. Saturation magnetization and coercivity of thin films increased gradually with the rise in ultrasonic powers during the electroless deposition process due to the higher amounts of cobalt.

  5. Oxidative chemical vapor deposition of polyaniline thin films.

    Science.gov (United States)

    Smolin, Yuriy Y; Soroush, Masoud; Lau, Kenneth K S

    2017-01-01

    Polyaniline (PANI) is synthesized via oxidative chemical vapor deposition (oCVD) using aniline as monomer and antimony pentachloride as oxidant. Microscopy and spectroscopy indicate that oCVD processing conditions influence the PANI film chemistry, oxidation, and doping level. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) indicate that a substrate temperature of 90 °C is needed to minimize the formation of oligomers during polymerization. Lower substrate temperatures, such as 25 °C, lead to a film that mostly includes oligomers. Increasing the oxidant flowrate to nearly match the monomer flowrate favors the deposition of PANI in the emeraldine state, and varying the oxidant flowrate can directly influence the oxidation state of PANI. Changing the reactor pressure from 700 to 35 mTorr does not have a significant effect on the deposited film chemistry, indicating that the oCVD PANI process is not concentration dependent. This work shows that oCVD can be used for depositing PANI and for effectively controlling the chemical state of PANI.

  6. Deposition and consolidation of porous ceramic films for membrane separation

    DEFF Research Database (Denmark)

    Elmøe, Tobias Dokkedal; Tricoli, Antonio; Johannessen, Tue

    The deposition of porous ceramic films for membrane separation can be done by several processes such as thermophoresis [1], dip-coating [2] and spray pyrolysis [3]. Here we present a high-speed method, in which ceramic nano-particles form a porous film by filtration on top of a porous ceramic...... substrate [4]. Ceramic nano-particles are generated in a flame, using either a premixed (gas) flame, in which a metal-oxide precursor is evaporated in an N2 stream, which is combusted with methane and air, or using a flame spray pyrolysis, in which a liquid metal-oxide precursor is sprayed through a nozzle...

  7. Directed vapor deposition of lithium manganese oxide films

    Science.gov (United States)

    Jin, Sang-Wan

    Electron beam evaporation and sputtering techniques are used to fabricate multilayered thin film structures. However, these techniques suffer several drawbacks resulting from (i) the complex chemistries of the lithiated oxide layers used for the cathode and electrolyte, (ii) the need for precise microstructure control in systems with many metastable phases, and (iii) the low deposition rate and poor material utilization efficiency, which slows the application of this energy storage approach. This dissertation has investigated the use of a novel electron-beam directed vapor deposition (EB-DVD) method for the synthesis of thin film batteries. The dissertation focuses upon the cathode layer of a representative Li-ion thin film battery system and investigates in detail the deposition of lithium manganese oxide films. Many phases with offering various electrochemical performance exist in the Li-Mn-O system and the thesis also investigates the use of processing conditions to control the structure and composition of these cathode layers. In the EB-DVD approach, a high voltage electron beam is used to evaporate a source material in the throat of a nozzle that forms a coaxial transonic gas jet around the vapor. The gas jet entrains and transports the vapor to a substrate where the deposition occurs. Directed simulation of Monte Carlo (DSMC) methods indicated that the vapor plume could be matched to a substrate diameter, and the deposition rate (and vapor utilization efficiency) therefore controlled by adjusting the pressure ratio up and downstream of the nozzle opening in the deposition chamber, and by varying the gas jet density and speed. The highest deposition rates were obtained with a high pressure ratio and the gas jet density. These observations are found to be consistent with the experimental results. Deposition rates up to 16 nm/s could be achieved using the most effective gas entrainment conditions identified by DSMC calculation. This was about a factor of ten

  8. Strontium-Doped Lanthanum Manganite Films Prepared by Magnetic Deposition

    DEFF Research Database (Denmark)

    Menon, Mohan; Larsen, Casper; Andersen, Kjeld Bøhm

    2009-01-01

    Deposition of La0.85Sr0.15MnO3 (LSM) films from suspensions using a magnetic field was found to be a cheap and quick technique. Ninety weight percent of the particles present in the suspensions were deposited within the first minute of the deposition, and the thickness of the film varied linearly...

  9. Resonant infrared pulsed laser deposition of thin biodegradable polymer films

    DEFF Research Database (Denmark)

    Bubb, D.M.; Toftmann, B.; Haglund Jr., R.F.

    2002-01-01

    Thin films of the biodegradable polymer poly(DL-lactide-co-glycolide) (PLGA) were deposited using resonant infrared pulsed laser deposition (RIR-PLD). The output of a free-electron laser was focused onto a solid target of the polymer, and the films were deposited using 2.90 (resonant with O-H str...

  10. Stress in and texture of PVD deposited metal nitride films

    NARCIS (Netherlands)

    Machunze, R.

    2010-01-01

    Thin metal nitride films deposited by Physical Vapor Deposition (PVD) are used amongst many other applications as wear protective coatings in tool industry or as diffusion barriers in integrated circuit technology. Typically these films exhibit a residual in-plane stress when deposited onto rigid su

  11. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  12. Flexible Cu(In,Ga)Se2 Thin-Film Solar Cells on Polyimide Substrate by Low-Temperature Deposition Process

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li; HE Qing; JIANG Wei-Long; LI Chang-Jian; SUN Yun

    2008-01-01

    The electrical and structural properties of polycrystalline Cu(In,Ga)Se2 films grown on polyimide (PI) substrates below 400℃ via one-stage and three-stage co-evaporation process have been investigated by x-ray diffraction spectra (XRD),scanning electron microscopy (SEM) and Hall effect measurement.As shown by XRD spectra,the stoichiometric CIGS films obtained by one-stage process exhibit the characteristic diffraction peaks of the (In0.68Ga0.32)2Se3 and Cu(In0.7Ga0.3)2Se.It is also found that the film structures indicate more columnar and compact than the three-stage process films from SEM images.The stoichiometric CIGS films obtained by three-stage process exhibit the coexistence of the secondary phase of (In0.68Ga0.32)2Se3,Cu2-xSe and Cu(In0.7Ga0.3)2Se.High net carrier concentration and sheet conductivity are also observed for this kind of film,related to the presence of Cu2-xSe phase.As a result,when the CIGS film growth temperature is below 400℃,the three-stage process is inefficient for solar cells.By using the one-stage co-evaporation process,the flexible CIGS solar cell on a PI substrate with the best conversion efficiency of 6.38% is demonstrated (active area 0.16cm2).

  13. CdTe Films Deposited by Closed-space Sublimation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    CdTe films are prepared by closed-space sublimation technology. Dependence of film crystalline on substrate materials and substrate temperature is investigated. It is found that films exhibit higher crystallinity at substrate temperature higher than 400℃. And the CdTe films deposited on CdS films with higher crystallinity have bigger crystallite and higher uniformity. Treatment with CdCl2 methanol solution promotes the crystallite growth of CdTe films during annealing.

  14. Electrolytically deposited Cadmium Selenide Films for Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Palaiologopoulou M. D.

    2012-10-01

    Full Text Available CdSe films were electrodeposited on pure nickel substrates. The nickel substrate was polished to a mirror finish by Al2O3 paste, etched in 10% HCl solution for 40 s and rinsed thoroughly by de-ionized water. The deposition bath contained solutions with excessive Cd2+ (0.2M from CdSO4 and small amounts of SeO2 (1x10-3 M. The pH of the bath was adjusted to a value of 2.2 at RT by adding 10% H2SO4. The bath was first thermostated at the required temperature, which varied from 55°C to 65°C. Plating was accomplished at deposition potential 1000 mV (vs. Hg/Hg2SO4. The films formed had a uniform thickness and it was found to be approximately 2.0 μm thick (for 20 min electrodeposition process. The produced CdSe films were characterized by X-Ray diffraction and SEM. The induced semiconductor doping effect by thermal annealing in pure dry nitrogen gas was also investigated. Gold contacts were placed on top of the CdSe films, either by evaporation, or mechanically. Depending on the deposition parameters the electrical characteristics of the Ni/CdSe/Au structures may exhibit rectification properties. The optical excitation of the structure was investigated for various CdSe thicknesses.

  15. Structural and Optical Study of Chemical Bath Deposited Nano-Structured CdS Thin Films

    Science.gov (United States)

    Kumar, Suresh; Sharma, Dheeraj; Sharma, Pankaj; Sharma, Vineet; Barman, P. B.; Katyal, S. C.

    2011-12-01

    CdS is commonly used as window layer in polycrystalline solar cells. The paper presents a structural and optical study of CdS nano-structured thin films. High quality CdS thin films are grown on commercial glass by means of chemical bath deposition. It involves an alkaline solution of cadmium salt, a complexant, a chalcogen source and a non-ionic surfactant. The films have been prepared under various process parameters. The chemically deposited films are annealed to estimate its effect on the structural and optical properties of films. These films (as -deposited and annealed) have been characterized by means of XRD, SEM and UV-Visible spectrophotometer. XRD of films show the nano-crystalline nature. The energy gap of films is found to be of direct in nature.

  16. Photocatalytic degradation of methylene blue using undoped and Ag-doped TiO{sub 2} thin films deposited by a sol-gel process: Effect of the ageing time of the starting solution and the film thickness

    Energy Technology Data Exchange (ETDEWEB)

    Guillen-Santiago, A.; Mayen, S.A.; Torres-Delgado, G.; Castanedo-Perez, R. [Laboratorio de Investigacion en Materiales, CINVESTAV-IPN, U. Queretaro, Apdo. Postal 1-798, Queretaro, Qro. 76001 (Mexico); Maldonado, A. [Departamento de Ingenieria. Electrica-SEES, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico); Olvera, M. de la L, E-mail: molvera@cinvestav.mx [Departamento de Ingenieria, Electrica-SEES, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico)

    2010-10-25

    Undoped and Ag-doped TiO{sub 2} thin films were deposited on glass substrates by the sol-gel method. A novel propose to prepare the solution is the use of titanium monohydrate oxyacetyl acetonate as the starting reagent. The effect of the ageing time of the starting solution as well as the number of coatings on the photocatalytic degradation of methylene blue (MB) was studied. The variation of the absorption spectra shows the degradation of MB dissolved in water, as a result of the reaction produced on the surface of the films, and promoted by ultraviolet irradiation during 5 h. The results show an optimum photocatalytic activity, in the order of 35%, presented in the 5-immersion Ag-doped TiO{sub 2} thin films, deposited from 7- and 14-day aged solutions. On the other hand, the Ag-doped TiO{sub 2} films deposited at different coatings show small changes in the photocatalytic activity. Morphological studies show the presence of silver particles on the film surface, due to the different number of coatings, affecting the photocatalytic performance.

  17. Polymer-assisted deposition of metal-oxide films.

    Science.gov (United States)

    Jia, Q X; McCleskey, T M; Burrell, A K; Lin, Y; Collis, G E; Wang, H; Li, A D Q; Foltyn, S R

    2004-08-01

    Metal oxides are emerging as important materials for their versatile properties such as high-temperature superconductivity, ferroelectricity, ferromagnetism, piezoelectricity and semiconductivity. Metal-oxide films are conventionally grown by physical and chemical vapour deposition. However, the high cost of necessary equipment and restriction of coatings on a relatively small area have limited their potential applications. Chemical-solution depositions such as sol-gel are more cost-effective, but many metal oxides cannot be deposited and the control of stoichiometry is not always possible owing to differences in chemical reactivity among the metals. Here we report a novel process to grow metal-oxide films in large areas at low cost using polymer-assisted deposition (PAD), where the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of uniform metal-organic films. The latter feature makes it possible to grow simple and complex crack-free epitaxial metal-oxides.

  18. Plasma-enhanced Deposition of Nano-Structured Carbon Films

    Institute of Scientific and Technical Information of China (English)

    Yang Qiaoqin (杨巧勤); Xiao Chijin (肖持进); A. Hirose

    2005-01-01

    By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD).Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310 ℃~550 ℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260 ℃.

  19. 复配分子膜剂处理油泥%Application of mixed molecular deposition film reagent for washing process of oily sludge

    Institute of Scientific and Technical Information of China (English)

    张智芳; 蔡永宽; 杜芳艳; 卜虎; 张美娟

    2011-01-01

    In order to purify the oily sludge and recover the oil, the molecular deposition (MD) film reagents were synthesized using epoxy chloropropane and organic amine as monomer. The MD and the mixed MD reagents were used to wash the oily sludge using chemical heat washing process. The surface tension of the MD reagent, and the relationship between the surface tension and the oil washing efficiency were studied. The results indicated that the mixed MD reagent exhibited more efficient than the MD reagent for washing oily sludge. The residual oil content was 0.4% from oily sludge with 42% oil washed by mixed MD reagent compounded by different MD reagents with equal mass ratio. The mechanism of thermochemical washing oily sludge was supposed.%为了实现净化油泥和回收石油资源,以环氧氯丙烷和有机胺为原料,制备系列分子膜剂和分子膜复配剂,将其用于落地油泥的清洗.测定分子膜剂及其分子膜复配剂的表面张力,研究表面张力与洗油效果的关系.结果表明,分子膜剂及其分子膜复配剂对落地油泥的分离均有一定效果,分子膜复配剂的效果优于单一膜剂,几种分子膜剂以等质量比例进行复配时,洗油效果较好,残油率最低,可将含油率为42%的落地油泥洗至残油率为0.4%.推测了分子膜剂热化学清洗油泥的机理.

  20. Robotic Deposition of TiO2 Films on Flexible Substrates from Hybrid Inks: Investigation of Synthesis-Processing-Microstructure-Photocatalytic Relationships.

    Science.gov (United States)

    Torres Arango, Maria A; Valença de Andrade, Alana S; Cipollone, Domenic T; Grant, Lynnora O; Korakakis, Dimitris; Sierros, Konstantinos A

    2016-09-21

    TiO2 is an important material widely used in optoelectronic devices due to its semiconducting and photocatalytic properties, nontoxicity, and chemically inert nature. Some indicative applications include water purification systems and energy harvesting. The use of solution, water-based inks for the direct writing of TiO2 on flexible substrates is of paramount importance since it enables low-cost and low-energy intensive large-area manufacturing, compatible with roll-to-roll processing. In this work we study the effect of crystalline TiO2 and polymer addition on the rheological and direct writing properties of Ti-organic/TiO2 inks. We also report on the bridging crystallite formation from the Ti-organic precursor into the TiO2 crystalline phase, under ultraviolet (UV) exposure or mild heat treatments up to 150 °C. Such crystallite formation is found to be enhanced by polymers with strong polarity and pKα such as polyacrylic acid (PAA). X-ray diffraction (XRD) coupled with Raman and X-ray photoelectron (XPS) spectroscopy are used to investigate the crystalline-phase transformation dependence based on the initial TiO2 crystalline-phase concentration and polymer addition. Transmission electron microscopy imaging and selected area electron diffraction patterns confirm the crystalline nature of such bridging printed structures. The obtained inks are patterned on flexible substrates using nozzle-based robotic deposition, a lithography-free, additive manufacturing technique that allows the direct writing of material in specific, digitally predefined, substrate locations. Photocatalytic degradation of methylene blue solutions highlights the potential of the studied films for chemical degradation applications, from low-cost environmentally friendly materials systems.

  1. Mineralization of Zein Films by Biomimetic Process

    Institute of Scientific and Technical Information of China (English)

    JIN Xiaoning; ZHANG Yanxiang; MA Ying; ZENG Sheng; WANG Shaozhen; MA Yalu

    2015-01-01

    The transparent or opaque zein film was prepared by a phase separation method with a zein ethanol aqueous solution. The circular zein film was self-assembled on the air-water interface. According to the images by scanning elec-tron microscopy, the upper surface of film is flat and smooth and the downward surface presents a complex reticulation structure of corn protein fiber. Zein film as a biomimetic mineralization template is used to synthesize calcium phosphate crystals by a bioinspired mineralization process. Randomly oriented apatite crystals appear on the both surfaces of zein film after immersion in 10´simulated body fluid, and the phase composition and morphology of the deposited calcium apatite are also distinguished from deposited location and immersion time. The phase transformation process from dical-cium phosphate dihydrate into hydroxyapatite (HAp) phase was investigated by X-ray powder diffraction, transmission electron microscopy and Fourier transform infrared spectroscopy, respectively. Based on the results by energy dispersive X-ray spectroscopy, the Ca/P ratio of the deposited apatite increases with the transformation from DCPD to HAp. The HAp/Zein films possess the excellent biodegradable structural features, and the coating of HAp crystallites has some potential applications for bone repair and regeneration.

  2. Mineralization of Zein Films by Biomimetic Process

    Institute of Scientific and Technical Information of China (English)

    JIN; Xiaoning; ZHANG; Yanxiang; MA; Ying; ZENG; Sheng; WANG; Shaozhen; MA; Yalu

    2015-01-01

    The transparent or opaque zein film was prepared by a phase separation method with a zein ethanol aqueous solution.The circular zein film was self-assembled on the air-water interface.According to the images by scanning electron microscopy,the upper surface of film is flat and smooth and the downward surface presents a complex reticulation structure of corn protein fiber.Zein film as a biomimetic mineralization template is used to synthesize calcium phosphate crystals by a bioinspired mineralization process.Randomly oriented apatite crystals appear on the both surfaces of zein film after immersion in lOxsimulated body fluid,and the phase composition and morphology of the deposited calcium apatite are also distinguished from deposited location and immersion time.The phase transformation process from dicalcium phosphate dihydrate into hydroxyapatite(HAp) phase was investigated by X-ray powder diffraction,transmission electron microscopy and Fourier transform infrared spectroscopy,respectively.Based on the results by energy dispersive X-ray spectroscopy,the Ca/P ratio of the deposited apatite increases with the transformation from DCPD to HAp.The HAp/Zein films possess the excellent biodegradable structural features,and the coating of HAp crystallites has some potential applications for bone repair and regeneration.

  3. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Science.gov (United States)

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm(2)/V·s and saturation current, I/lW > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  4. P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Castillo, A.; Salas-Villasenor, A.; Mejia, I. [Department of Materials Science and Engineering, The University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Aguirre-Tostado, S. [Centro de Investigacion en Materiales Avanzados, S. C. Alianza Norte 202, Parque de Investigacion e Innovacion Tecnologica, Apodaca, Nuevo Leon, C.P. 666000 (Mexico); Gnade, B.E. [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States); Quevedo-Lopez, M.A., E-mail: mxq071000@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas. 800 West Campbell Rd, Richardson, TX 75083 (United States)

    2012-01-31

    In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was {approx} 0.09 cm{sup 2} V{sup -1} s{sup -1} whereas the mobility for devices annealed at 150 Degree-Sign C/h in forming gas increased up to {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Besides the thermal annealing, the entire fabrications process was maintained below 100 Degree-Sign C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 Degree-Sign C anneal as well as a function of the PbS active layer thicknesses. - Highlights: Black-Right-Pointing-Pointer Thin film transistors with PbS as semiconductor deposited by chemical bath deposition. Black-Right-Pointing-Pointer Photolithography-based thin film transistors with PbS films at low temperatures. Black-Right-Pointing-Pointer Electron mobility for anneal-PbS devices of {approx} 0.14 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Highest mobility reported in thin film transistors with PbS as the semiconductor.

  5. Reducing Water Vapor Permeability of Poly(lactic acid Film and Bottle through Layer-by-Layer Deposition of Green-Processed Cellulose Nanocrystals and Chitosan

    Directory of Open Access Journals (Sweden)

    Katalin Halász

    2015-01-01

    Full Text Available Layer-by-layer electrostatic self-assembly technique was applied to improve the barrier properties of poly(lactic acid (PLA films and bottles. The LbL process was carried out by the alternate adsorption of chitosan (CH (polycation and cellulose nanocrystals (CNC produced via ultrasonic treatment. Four bilayers (on each side of chitosan and cellulose nanocrystals caused 29 and 26% improvement in barrier properties in case of films and bottles, respectively. According to the results the LbL process with CH and CNC offered a transparent “green” barrier coating on PLA substrates.

  6. Pulsed laser deposition and characterization of Alnico5 magnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Butt, M.Z., E-mail: mzbutt49@yahoo.com [Department of Physics, GC University, Lahore 54000 (Pakistan); Ali, Dilawar [Department of Physics, GC University, Lahore 54000 (Pakistan); Ahmad, Fayyaz [Department of Physics, University of Engineering and Technology, Lahore 54890 (Pakistan); Magnetophotonics Research Laboratory, Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-09-01

    Alnico5 films were deposited by pulsed laser deposition on glass substrate at room temperature under a vacuum ∼10{sup −3} Torr in the absence and in the presence of 500 Oe external transverse magnetic field applied on the plasma plume during film deposition. For this purpose, Nd:YAG laser was employed to ablate the Alnico5 target. The ablated material was deposited on glass substrate placed at a distance of 2 cm from the target. The structural and magnetic properties of the film were analyzed by X-ray diffraction, atomic force microscope, and vibrating sample magnetometer. X-ray diffraction patterns showed that the Alnico5 films were amorphous in nature. Atomic force microscopy revealed that the Alnico5 film deposited in absence of external magnetic field has larger root-mean-square roughness value (60.2 nm) than the magnetically deposited film (42.9 nm). Vibrating sample magnetometer measurements showed that the in-plane saturation magnetization of Alnico5 film deposited in the presence of external magnetic field increases by 32% as compared to that for the film deposited in the absence of external magnetic field. However, the out-of-plane saturation magnetization was almost independent of the external magnetic field. In magnetically deposited film, there is in-plane anisotropy parallel to the applied external magnetic field.

  7. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  8. Enhanced electrical properties of pulsed laser-deposited CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films via processing control

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Yeon Hwa; Mohanty, Bhaskar Chandra; Cho, Yong Soo [Department of Materials Science and Engineering, Yonsei University, Seoul (Korea, Republic of)

    2010-12-15

    Polycrystalline CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300 mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65 degto 0.54 deg. Slightly Cu-rich surface with Cu{sub 2-x}Se phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of {proportional_to}10{sup 18} cm{sup -3} and resistivity of 10{sup -1}{omega} cm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu{sub 2-x}Se phase and diffusion of Na from substrates to films. (author)

  9. Pulsed laser deposition of carbon nanotube and polystyrene-carbon nanotube composite thin films

    Science.gov (United States)

    Stramel, A. A.; Gupta, M. C.; Lee, H. R.; Yu, J.; Edwards, W. C.

    2010-12-01

    In this work, we report on the fabrication of carbon nanotube thin films via pulsed laser deposition using a pulsed, diode pumped, Tm:Ho:LuLF laser with 2 μm wavelength. The thin films were deposited on silicon substrates using pure carbon nanotube targets and polystyrene-carbon nanotube composite targets. Raman spectra, scanning electron micrographs, and transmission electron micrographs show that carbon nanotubes are present in the deposited thin films, and that the pulsed laser deposition process causes minimal degradation to the quality of the nanotubes when using pure carbon nanotube targets.

  10. Apparatus and method for selective area deposition of thin films on electrically biased substrates

    Science.gov (United States)

    Zuhr, Raymond A.; Haynes, Tony E.; Golanski, Andrzej

    1994-01-01

    An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

  11. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Gellings, P.J.; Vendel, van de D.; Metselaar, H.S.C.; Corbach, van H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical pro

  12. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  13. Underpotential deposition-mediated layer-by-layer growth of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jia Xu; Adzic, Radoslav R.

    2015-05-19

    A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

  14. Deposition of silicon films in presence of nitrogen plasma—A feasibility study

    Indian Academy of Sciences (India)

    Sheetal J Patil; Dhananjay S Bodas; G J Phatak; S A Gangal

    2002-10-01

    A design, development and validation work of plasma based ‘activated reactive evaporation (ARE) system’ is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by e-beam gun in presence of nitrogen plasma, excited by inductively coupled RF source (13.56 MHz). The activated silicon reacts with the ionized nitrogen and the films get deposited on silicon substrate. Different physical and process related parameters are changed. The grown films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and ellipsometry. The results indicate that the film contains silicon nitride and a phase of silicon oxy nitride deposited even at room temperature. This shows the feasibility of using the ARE technique for the deposition of silicon films in nitrogen plasma.

  15. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Shin Jinhong [Texas Materials Institute, University of Texas at Austin, Austin, TX 78750 (United States); Waheed, Abdul [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Winkenwerder, Wyatt A. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Kim, Hyun-Woo [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Agapiou, Kyriacos [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Jones, Richard A. [Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712 (United States); Hwang, Gyeong S. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States); Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712 (United States)]. E-mail: ekerdt@che.utexas.edu

    2007-05-07

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO{sub 2} containing {approx} 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH{sub 2}(PMe{sub 3}){sub 4} (Me = CH{sub 3}) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase.

  16. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  17. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  18. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Henley, W.B.; Sacks, G.J. [Univ. of South Florida, Tampa, FL (United States). Center of Microelectronics

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  19. LDRD Final Report - Investigations of the impact of the process integration of deposited magnetic films for magnetic memory technologies on radiation-hardened CMOS devices and circuits - LDRD Project (FY99)

    Energy Technology Data Exchange (ETDEWEB)

    MYERS,DAVID R.; JESSING,JEFFREY R.; SPAHN,OLGA B.; SHANEYFELT,MARTY R.

    2000-01-01

    This project represented a coordinated LLNL-SNL collaboration to investigate the feasibility of developing radiation-hardened magnetic non-volatile memories using giant magnetoresistance (GMR) materials. The intent of this limited-duration study was to investigate whether giant magnetoresistance (GMR) materials similar to those used for magnetic tunnel junctions (MTJs) were process compatible with functioning CMOS circuits. Sandia's work on this project demonstrated that deposition of GMR materials did not affect the operation nor the radiation hardness of Sandia's rad-hard CMOS technology, nor did the integration of GMR materials and exposure to ionizing radiation affect the magnetic properties of the GMR films. Thus, following deposition of GMR films on rad-hard integrated circuits, both the circuits and the films survived ionizing radiation levels consistent with DOE mission requirements. Furthermore, Sandia developed techniques to pattern deposited GMR films without degrading the completed integrated circuits upon which they were deposited. The present feasibility study demonstrated all the necessary processing elements to allow fabrication of the non-volatile memory elements onto an existing CMOS chip, and even allow the use of embedded (on-chip) non-volatile memories for system-on-a-chip applications, even in demanding radiation environments. However, funding agencies DTRA, AIM, and DARPA did not have any funds available to support the required follow-on technology development projects that would have been required to develop functioning prototype circuits, nor were such funds available from LDRD nor from other DOE program funds.

  20. On the uniformity of films fabricated by glancing angle deposition

    Science.gov (United States)

    Wakefield, Nicholas G.; Sit, Jeremy C.

    2011-04-01

    Films fabricated using the glancing angle deposition technique are subject to significant variations in several important film parameters across a sample due to geometric conditions that are not uniform across the substrate. This paper presents a method to quantify the non-uniformities in these quantities, starting from a generalized geometric framework, for low-pressure, physical vapor deposition of thin films on substrates of arbitrary size and position. This method is applicable to any glancing angle deposition setup including substrate tilt and rotation but focuses on the case of constant deposition angle and arbitrary azimuthal rotation. While some quantities, such as the effective deposition angle and the deposited mass per unit area at any given point on the substrate can be determined purely from the geometry of the deposition setup, obtaining further quantities, such as the film density and thickness, requires additional, material-specific information that is easily measured.

  1. Atomic layer deposition ultrathin film origami using focused ion beams

    Science.gov (United States)

    Supekar, O. D.; Brown, J. J.; Eigenfeld, N. T.; Gertsch, J. C.; Bright, V. M.

    2016-12-01

    Focused ion beam (FIB) micromachining is a powerful tool for maskless lithography and in recent years FIB has been explored as a tool for strain engineering. Ion beam induced deformation can be utilized as a means for folding freestanding thin films into complex 3D structures. FIB of high energy gallium (Ga+) ions induces stress by generation of dislocations and ion implantation within material layers, which create creases or folds upon mechanical relaxation enabled by motion of the material layers. One limitation on such processing is the ability to fabricate flat freestanding thin film structures. This capability is limited by the residual stresses formed during processing and fabrication of the films, which can result in initial curvature and deformation of films upon release from a sacrificial fabrication layer. This paper demonstrates folding in freestanding ultrathin films (1:1000) by ion-induced stress relaxation. The ultrathin flat structures are fabricated using atomic layer deposition on sacrificial polyimide. We have demonstrated vertical folding with 30 keV Ga+ ions in structures with lateral dimensions varying from 10 to 50 μm.

  2. Characterization of copper selenide thin films deposited by chemical bath deposition technique

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    2004-11-01

    A low-cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films onto glass substrates and deposited films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-vis spectrophotometry. Good quality thin films of smooth surface of copper selenide thin films were deposited using sodium selenosulfate as a source of selenide ions. The structural and optical behaviour of the films are discussed in the light of the observed data.

  3. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  4. Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

    2008-05-01

    A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

  5. ZnO thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsoutsouva, M.G. [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Panagopoulos, C.N., E-mail: chpanag@metal.ntua.gr [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Papadimitriou, D. [National Technical University of Athens, Department of Physics, GR-15780 Athens (Greece); Fasaki, I.; Kompitsas, M. [Theor. and Phys./Chem. Institute, National Hellenic Research Foundation, 48 Vas. Konstantinou Ave., 11635 Athens (Greece)

    2011-04-15

    Zinc oxide (ZnO) thin films were deposited on soda lime glass substrates by pulsed laser deposition (PLD) in an oxygen-reactive atmosphere. The structural, optical, and electrical properties of the as-prepared thin films were studied in dependence of substrate temperature and oxygen pressure. High quality polycrystalline ZnO films with hexagonal wurtzite structure were deposited at substrate temperatures of 100 and 300 deg. C. The RMS roughness of the deposited oxide films was found to be in the range 2-9 nm and was only slightly dependent on substrate temperature and oxygen pressure. Electrical measurements indicated a decrease of film resistivity with the increase of substrate temperature and the decrease of oxygen pressure. The ZnO films exhibited high transmittance of 90% and their energy band gap and thickness were in the range 3.26-3.30 eV and 256-627 nm, respectively.

  6. Ion Beam Assisted Deposition Of Optical Thin Films - Recent Results

    Science.gov (United States)

    McNally, J. J.; Al-Jumaily, G. A.; Wilson, S. R.; McNeil, J. R.

    1985-11-01

    We have examined the properties of dielectric (Ti02, Si02, -Al203, Ta205 and Hf02) films deposited using ion-assisted deposition (IAD). The films were characterized using an angularly resolved scatterometer, spectrophotometer and Raman spectroscopy. A reduction in optical scatter, especially that due to low spatial frequencies, is observed for films deposited with simultaneous ion bombardment. Higher values of refractive index are obtained for films deposited using IAD. Raman spectra indicate a crystalline phase change in TiO2 films is induced by bombardment of samples with 02 ions during deposition. Other experimental data and the effects of the induced phase transition on the optical properties of TiO2 will be discussed.

  7. Solution deposition of nanometer scale silver films as an alternative to vapor deposition for plasmonic excitation

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Derek S.; Sathish, R. Sai; Kostov, Yordan [Center for Advanced Sensor Technology and Department of Chemical and Biochemical Engineering, University of Maryland Baltimore County, 1000 Hilltop Circle, Baltimore, MD 21250 (United States); Rao, Govind, E-mail: grao@umbc.ed [Center for Advanced Sensor Technology and Department of Chemical and Biochemical Engineering, University of Maryland Baltimore County, 1000 Hilltop Circle, Baltimore, MD 21250 (United States)

    2010-05-03

    We report the attainment of surface plasmon-coupled emission (SPCE) from highly uniform thin silver films, solution-deposited on glass substrates by a wet chemistry approach. The surface morphology of these films was characterized by atomic force microscopy. The SPCE emission enhancements, polarization and angularity obtained from solution-deposited silver on BK7 glass were comparable to that achieved from conventional SPCE slides prepared via vapor deposition. This facile, wet chemistry procedure for the deposition of SPCE films provides an inexpensive, low maintenance alternative to vapor deposition for SPCE substrate preparation. This would allow the fluorescence observation technique to become more readily available for high sensitivity, low cost applications.

  8. Influence of deposition time on the properties of chemical bath deposited manganese sulfide thin films

    Directory of Open Access Journals (Sweden)

    Anuar Kassim

    2010-12-01

    Full Text Available Manganese sulfide thin films were chemically deposited from an aqueous solution containing manganese sulfate, sodium thiosulfate and sodium tartrate. The influence of deposition time (2, 3, 6 and 8 days on the properties of thin films was investigated. The structure and surface morphology of the thin films were studied by X-ray diffraction and atomic force microscopy, respectively. In addition, in order to investigate the optical properties of the thin films, the UV-visible spectrophotometry was used. The XRD results indicated that the deposited MnS2 thin films exhibited a polycrystalline cubic structure. The number of MnS2 peaks on the XRD patterns initially increased from three to six peaks and then decreased to five peaks, as the deposition time was increased from 2 to 8 days. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the deposition time.

  9. Plasma-deposited a-C(N) H films

    CERN Document Server

    Franceschini, D E

    2000-01-01

    The growth behaviour, film structure and mechanical properties of plasma-deposited amorphous hydrogenated carbon-nitrogen films are shortly reviewed. The effect of nitrogen-containing gas addition to the deposition to the hydrocarbon atmospheres used is discussed, considering the modifications observed in the chemical composition growth kinetics, carbon atom hybridisation and chemical bonding arrangements of a-C(N):H films. The overall structure behaviour is correlated to the variation of the mechanical properties.

  10. Time-Resolved Spectroscopic Observation of Deposition Processes of Ultrananocrystalline Diamond/Amorphous Carbon Composite Films by Using a Coaxial Arc Plasma Gun

    Science.gov (United States)

    Hanada, Kenji; Yoshitake, Tsuyoshi; Nishiyama, Takashi; Nagayama, Kunihito

    2010-08-01

    The deposition of ultrananocrystalline diamond (UNCD)/amorphous carbon composite films using a coaxial arc plasma gun in vacuum and, for comparison, in a 53.3 Pa hydrogen atmosphere was spectroscopically observed using a high-speed camera equipped with narrow-band-pass filters. UNCD crystallites with diameters of approximately 1.6 nm were formed even in vacuum. These extremely small crystallites imply that the formation is predominantly due to nucleation without the subsequent growth. Even in vacuum, emissions from C+ ions, C atoms, and C2 dimers lasted for approximately 100 µs, although the emission lifetimes of these species are generally 10 ns. We consider that the nucleation is due to the supersaturated environment containing excited carbon species with large number densities.

  11. Hysteretic Process of Aluminium Oxide Films Deposited by Reactive Sputtering Method%磁控溅射沉积氧化铝薄膜的迟滞效应

    Institute of Scientific and Technical Information of China (English)

    徐化冰; 徐香坤

    2013-01-01

    The hysteretic behaviour of aluminium oxide films in reactive sputtering was investigated by plasma optical emission spectroscopy technology. The evolutions of aluminium( 396 nm) and aluminium oxide(484 nm) emission lines as functions of oxygen flow rates were measured. The crystal structure, a-tomic ratio and light transmission of aluminium oxide films were analyzed by X-ray diffraction (XRD) , energy dispersive spectrometer (EDS) and ultraviolet - visible spectroscopy (UV-VIS). The results show that because the aluminium oxide deposited on the magnetron target impacts the alumina sputtering, the Al (39 6 nm) line intensity affects the crystal structure, atomic ratio and light transmission of aluminium oxide films. Meanwhile, the hysteresis curves show that an optimum deposition zone exists in the transition region where the oxygen flow rates is 1. 5~2. 0 mL/min. The sample obtains in this deposition zone' and its composition has the best chemical atomic weight ratio of 0. 689. This indicates that the deposited aluminium oxide films have excellent qualities.%利用光发射谱(OES)技术,对反应磁控溅射过程的氧化铝薄膜的迟滞效应进行了研究.对等离子体中的铝(396 nm)谱线和氧化铝(484 nm)谱线随氧气流量的变化进行了实时测量,获得了其迟滞曲线.在迟滞曲线的不同位置分别进行了氧化铝薄膜的沉积试验.采用X射线衍射仪(XRD)、能谱仪(EDS)和紫外可见吸收光谱仪(UV-VIS)对薄膜的晶体结构、成分和透光性进行了分析.结果表明:由于磁控靶表面的氧化铝沉积影响了铝靶材的溅射,导致Al(396 nm)谱线的强度对氧化铝薄膜的晶体结构、原子比以及样品的透光性有明显的影响.同时,由迟滞曲线可知在氧气流量为1.5~2.0 mL/min的过渡区内存在着一个最优沉积带.在这个沉积带获得的样品,其成分具有最佳的化学原子量配比,为0.689.这说明沉积出了高质量的氧化铝薄膜.

  12. Optimized the Parameters in Process of PECVD Deposition Silicon Nitride Film%PECVD氮化硅薄膜工艺参数研究

    Institute of Scientific and Technical Information of China (English)

    张树明; 廖华; 何京鸿; 尹云坤; 胡俊涛; 罗群

    2011-01-01

    According to the structure of solar modules and the performance of encapsulating material, the best antireflection film thickness and refractive index have been designed for silicon solar cell, and the technical parameters have been optimized with TAYLOR formula. Through the experiments, the good deposition parameters have been obtained for CETC-48th tube PECVD equipment.%根据太阳电池组件的结构和封装材料特性,设计出硅太阳电池片减反射薄膜的最佳厚度和折射率,利用泰勒公式进行优化PECVD制备氮化硅薄膜的工艺参数.通过实验,找出适合中电48所工业生产用管式PECVD制备氮化硅薄膜的工艺参数.

  13. Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fang, J.S., E-mail: jsfang@nfu.edu.tw [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Sun, S.L. [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Cheng, Y.L. [Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan (China); Chen, G.S.; Chin, T.S. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

    2016-02-28

    Graphical abstract: - Abstract: The present paper reports Cu and Cu(Mn) films prepared layer-by-layer using an electrochemical atomic layer deposition (ECALD) method. The structure and properties of the films were investigated to elucidate their suitability as Cu interconnects for microelectronics. Previous studies have used primarily a vacuum-based atomic layer deposition to form a Cu metallized film. Herein, an entirely wet chemical process was used to fabricate a Cu film using the ECALD process by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). The experimental results indicated that an inadequate UPD of Pb affected the subsequent SLRR of Cu and lead to the formation of PbSO{sub 4}. A mechanism is proposed to explain the results. Layer-by-layer deposition of Cu(Mn) films was successfully performed by alternating the deposition cycle-ratios of SLRR-Cu and UPD-Mn. The proposed self-limiting growth method offers a layer-by-layer wet chemistry-based deposition capability for fabricating Cu interconnects.

  14. Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

    Science.gov (United States)

    Fang, J. S.; Sun, S. L.; Cheng, Y. L.; Chen, G. S.; Chin, T. S.

    2016-02-01

    The present paper reports Cu and Cu(Mn) films prepared layer-by-layer using an electrochemical atomic layer deposition (ECALD) method. The structure and properties of the films were investigated to elucidate their suitability as Cu interconnects for microelectronics. Previous studies have used primarily a vacuum-based atomic layer deposition to form a Cu metallized film. Herein, an entirely wet chemical process was used to fabricate a Cu film using the ECALD process by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). The experimental results indicated that an inadequate UPD of Pb affected the subsequent SLRR of Cu and lead to the formation of PbSO4. A mechanism is proposed to explain the results. Layer-by-layer deposition of Cu(Mn) films was successfully performed by alternating the deposition cycle-ratios of SLRR-Cu and UPD-Mn. The proposed self-limiting growth method offers a layer-by-layer wet chemistry-based deposition capability for fabricating Cu interconnects.

  15. Deposition of copper selenide thin films and nanoparticles

    Science.gov (United States)

    Hu, Yunxiang; Afzaal, Mohammad; Malik, Mohammad A.; O'Brien, Paul

    2006-12-01

    A new method is reported for the growth of copper selenide thin films and nanoparticles using copper acetylacetonate and trioctylphosphine selenide. Aerosol-assisted chemical vapor deposition experiments lead to successful deposition of tetragonal Cu 2Se films. In contrast, hexadecylamine capped nanoparticles are composed of cubic Cu 2-xSe. The deposited materials are optically and structurally characterized. The results of this comprehensive study are described and discussed.

  16. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    Energy Technology Data Exchange (ETDEWEB)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M. [Argonne National Lab., IL (United States); Lin, Y.P. [Argonne National Lab., IL (United States)]|[Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science; Schultz, J.A. [Ionwerks, Inc., Houston, TX (United States); Schmidt, H. [Schmidt Instruments, Inc., Houston, TX (United States); Liu, Y.L. [Argonne National Lab., IL (United States)]|[Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Auciello, O. [Microelectronics Center of North Carolina, Research Triangle Park, NC (United States); Barr, T. [Wisconsin Univ., Milwaukee, WI (United States). Dept. of Materials Science; Chang, R.P.H. [Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science

    1992-08-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.

  17. Underpotential deposition-mediated layer-by-layer growth of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jia Xu; Adzic, Radoslav R.

    2017-06-27

    A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves electrochemically exchanging a mediating element on a substrate with a noble metal film by alternatingly sweeping potential in forward and reverse directions for a predetermined number of times in an electrochemical cell. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis.

  18. Nanostructured and amorphous-like tungsten films grown by pulsed laser deposition

    Science.gov (United States)

    Dellasega, D.; Merlo, G.; Conti, C.; Bottani, C. E.; Passoni, M.

    2012-10-01

    An experimental investigation of nanostructured, micrometer-thick, tungsten films deposited by pulsed laser deposition is presented. The films are compact and pore-free, with crystal grain sizes ranging from 14 nm to less than 2 nm. It is shown how, by properly tailoring deposition rate and kinetic energy of ablated species, it is possible to achieve a detailed and separate control of both film morphology and structure. The role of the main process parameters, He background pressure, laser fluence, and energy, is elucidated. In contrast with W films produced with other PVD techniques, β-phase growth is avoided and the presence of impurities and contaminants, like oxygen, is not correlated with film structure. These features make these films interesting for the development of coatings with improved properties, like increased corrosion resistance and enhanced diffusion barriers.

  19. Influence of bias on properties of carbon films deposited by MCECR plasma sputtering method

    Institute of Scientific and Technical Information of China (English)

    CAI Chang-long; DIAO Dong-feng; S.Miyake; T.Matsumoto

    2004-01-01

    The mirror-confinement-type electron cyclotron resonance(MCECR) plasma source has high plasma density and high electron temperature. It is quite useful in many plasma processing, and has been used for etching and thin-film deposition. The carbon films with 40 nm thickness were deposited by MCECR plasma sputtering method on Si, and the influence of substrate bias on the properties of carbon films was studied. The bonding structure of the film was analyzed by the X-ray photoelectron spectroscopy(XPS), the tribological properties were measured by the pin-on-disk(POD) tribometer, the nanohardness of the films was measured by the nanoindenter, and the deposition speed and the refractive index were measured by the ellipse meter. The better substrate bias was obtained, and the better properties of carbon films were obtained.

  20. Effects of deposition time in chemically deposited ZnS films in acidic solution

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, H.; Chelouche, A., E-mail: azeddinechelouche@gmail.com; Talantikite, D.; Merzouk, H.; Boudjouan, F.; Djouadi, D.

    2015-08-31

    We report an experimental study on the synthesis and characterization of zinc sulfide (ZnS) single layer thin films deposited on glass substrates by chemical bath deposition technique in acidic solution. The effect of deposition time on the microstructure, surface morphology, optical absorption, transmittance, and photoluminescence (PL) was investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), UV-Vis–NIR spectrophotometry and photoluminescence (PL) spectroscopy. The results showed that the samples exhibit wurtzite structure and their crystal quality is improved by increasing deposition time. The latter, was found to affect the morphology of the thin films as showed by SEM micrographs. The optical measurements revealed a high transparency in the visible range and a dependence of absorption edge and band gap on deposition time. The room temperature PL spectra indicated that all ZnS grown thin films emit a UV and blue light, while the band intensities are found to be dependent on deposition times. - Highlights: • Single layer ZnS thin films were deposited by CBD in acidic solution at 95 °C. • The effect of deposition time was investigated. • Coexistence of ZnS and ZnO hexagonal structures for time deposition below 2 h • Thicker ZnS films were achieved after monolayer deposition for 5 h. • The highest UV-blue emission observed in thin film deposited at 5 h.

  1. Spatial atomic layer deposition of zinc oxide thin films

    NARCIS (Netherlands)

    Illiberi, A.; Roozeboom, F.; Poodt, P.W.G.

    2012-01-01

    Zinc oxide thin films have been deposited at high growth rates (up to ~1 nm/s) by spatial atomic layer deposition technique at atmospheric pressure. Water has been used as oxidant for diethylzinc (DEZ) at deposition temperatures between 75 and 250 °C. The electrical, structural (crystallinity and mo

  2. Antireflection coatings on plastics deposited by plasma polymerization process

    Indian Academy of Sciences (India)

    K M K Srivatsa; M Bera; A Basu; T K Bhattacharya

    2008-08-01

    Antireflection coatings (ARCs) are deposited on the surfaces of optical elements like spectacle lenses to increase light transmission and improve their performance. In the ophthalmic industry, plastic lenses are rapidly displacing glass lenses due to several advantageous features. However, the deposition of ARCs on plastic lenses is a challenging task, because the plastic surface needs treatment for adhesion improvement and surface hardening before depositing the ARC. This surface treatment is usually done in a multi-stage process—exposure to energetic radiations, followed by deposition of a carbonyl hard coating by spin or dip coating processes, UV curing, etc. However, this treatment can also be done by plasma processes. Moreover, the plasma polymerization process allows deposition of optical films at room temperature, essential for plastics. The energetic ions in plasma processes provide similar effects as in ion assisted physical deposition processes to produce hard coatings, without requiring sophisticated ion sources. The plasma polymerization process is more economical than ion-assisted physical vapour deposition processes as regards equipment and source materials and is more cost-effective, enabling the surface treatment and deposition of the ARC in the same deposition system in a single run by varying the system parameters at each step. Since published results of the plasma polymerization processes developed abroad are rather sketchy and the techniques are mostly veiled in commercial secrecy, innovative and indigenous plasma-based techniques have been developed in this work for depositing the complete ARCs on plastic substrates.

  3. Pulsed laser deposition of fluoride glass thin films

    Science.gov (United States)

    Ganser, Dimitri; Gottmann, Jens; Mackens, Uwe; Weichmann, Ulrich

    2010-11-01

    The development of integrated waveguide lasers for different applications such as marking, illumination or medical technology has become highly desirable. Diode pumped planar waveguide lasers emitting in the green visible spectral range, e.g. thin films from praseodymium doped fluorozirconate glass matrix (called ZBLAN, owing to the main components ZrF 4, BaF 2, LaF 3, AlF 3 and NaF) as the active material pumped by a blue laser diode, have aroused great interest. In this work we have investigated the deposition of Pr:ZBLAN thin films using pulsed laser radiation of λ = 193 and λ = 248 nm. The deposition has been carried out on MgF 2 single crystal substrates in a vacuum chamber by varying both processing gas pressure and energy fluence. The existence of an absorption line at 210 nm in Pr:ZBLAN leads to absorption and radiative relaxation of the absorbed laser energy of λ = 193 nm preventing the evaporation of target material. The deposited thin films consist of solidified and molten droplets and irregular particulates only. Furthermore, X-ray radiation has been applied to fluoride glass targets to enhance the absorption in the UV spectral region and to investigate the deposition of X-ray treated targets applying laser radiation of λ = 248 nm. It has been shown that induced F-centres near the target surface are not thermally stable and can be easily ablated. Therefore, λ = 248 nm is not suitable for evaporation of Pr:ZBLAN.

  4. Pulsed laser deposition of fluoride glass thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ganser, Dimitri, E-mail: dimitri.ganser@llt.rwth-aachen.de [Chair for Laser Technology LLT, RWTH Aachen University, Steinbachstr. 15, D-52074 Aachen (Germany); Gottmann, Jens [Chair for Laser Technology LLT, RWTH Aachen University, Steinbachstr. 15, D-52074 Aachen (Germany); Mackens, Uwe; Weichmann, Ulrich [Philips Research Laboratories, Weisshausstrasse 2, D-52066 Aachen (Germany)

    2010-11-15

    The development of integrated waveguide lasers for different applications such as marking, illumination or medical technology has become highly desirable. Diode pumped planar waveguide lasers emitting in the green visible spectral range, e.g. thin films from praseodymium doped fluorozirconate glass matrix (called ZBLAN, owing to the main components ZrF{sub 4}, BaF{sub 2}, LaF{sub 3}, AlF{sub 3} and NaF) as the active material pumped by a blue laser diode, have aroused great interest. In this work we have investigated the deposition of Pr:ZBLAN thin films using pulsed laser radiation of {lambda} = 193 and {lambda} = 248 nm. The deposition has been carried out on MgF{sub 2} single crystal substrates in a vacuum chamber by varying both processing gas pressure and energy fluence. The existence of an absorption line at 210 nm in Pr:ZBLAN leads to absorption and radiative relaxation of the absorbed laser energy of {lambda} = 193 nm preventing the evaporation of target material. The deposited thin films consist of solidified and molten droplets and irregular particulates only. Furthermore, X-ray radiation has been applied to fluoride glass targets to enhance the absorption in the UV spectral region and to investigate the deposition of X-ray treated targets applying laser radiation of {lambda} 248 nm. It has been shown that induced F-centres near the target surface are not thermally stable and can be easily ablated. Therefore, {lambda} = 248 nm is not suitable for evaporation of Pr:ZBLAN.

  5. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

    Science.gov (United States)

    Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.

    2013-01-01

    Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas-solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic-organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

  6. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  7. Controlled Mechanical Cracking of Metal Films Deposited on Polydimethylsiloxane (PDMS

    Directory of Open Access Journals (Sweden)

    Andreas Polywka

    2016-09-01

    Full Text Available Stretchable large area electronics conform to arbitrarily-shaped 3D surfaces and enables comfortable contact to the human skin and other biological tissue. There are approaches allowing for large area thin films to be stretched by tens of percent without cracking. The approach presented here does not prevent cracking, rather it aims to precisely control the crack positions and their orientation. For this purpose, the polydimethylsiloxane (PDMS is hardened by exposure to ultraviolet radiation (172 nm through an exposure mask. Only well-defined patterns are kept untreated. With these soft islands cracks at the hardened surface can be controlled in terms of starting position, direction and end position. This approach is first investigated at the hardened PDMS surface itself. It is then applied to conductive silver films deposited from the liquid phase. It is found that statistical (uncontrolled cracking of the silver films can be avoided at strain below 35%. This enables metal interconnects to be integrated into stretchable networks. The combination of controlled cracks with wrinkling enables interconnects that are stretchable in arbitrary and changing directions. The deposition and patterning does not involve vacuum processing, photolithography, or solvents.

  8. Formation of aluminum films on silicon by ion beam deposition: A comparison with ionized cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zuhr, R.A.; Haynes, T.E.; Galloway, M.D. (Oak Ridge National Lab., TN (USA)); Tanaka, S.; Yamada, A.; Yamada, I. (Kyoto Univ. (Japan). Ion Beam Engineering Lab.)

    1990-01-01

    The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. In this work, we have studied the formation of such films by IBD with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40{degree} to 300{degree}C and with ion energies from 30 to 120 eV per ion. Completed films were analyzed by ion scattering, x-ray diffraction, scanning electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are compared with results for similar films grown by ICB deposition. 15 refs., 3 figs.

  9. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  10. PbS Thin Films for Photovoltaic Applications Obtained by Non-Traditional Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    Pérez-García Claudia Elena

    2015-01-01

    Full Text Available To optimize cost-efficiency relation for thin film solar cells, we explore the recently developed versions of chemical deposition of semiconductor films, together with classic CBD (Chemical Bath Deposition: SILAR (Successive Ionic Layer Adsorption and Reaction and PCBD (Photo Chemical Bath Deposition, all of them ammonia-free and ecologically friendly. The films of CdS and PbS were made, and experimental solar cells with CdS window layer and PbS absorber elaborated. We found that band gap of PbS films can be monitored by deposition process due to porosity-induced quantum confinement which depends on the parameters of the process. We expect that the techniques employed can be successfully used for production of optoelectronic devices.

  11. The role of oxygen in the deposition of copper–calcium thin film as diffusion barrier for copper metallization

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Zhinong, E-mail: znyu@bit.edu.cn [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Ren, Ruihuang [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China); Xue, Jianshe; Yao, Qi; Li, Zhengliang; Hui, Guanbao [Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176 (China); Xue, Wei [School of Optoelectronics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081 (China)

    2015-02-15

    Highlights: • The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film. • The introduction of oxygen into the deposition of CuCa film is necessary to improve the adhesion of Cu film. • The CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate. - Abstract: The properties of copper (Cu) metallization based on copper–calcium (CuCa) diffusion barrier as a function of oxygen flux in the CuCa film deposition were investigated in view of adhesion, diffusion and electronic properties. The CuCa film as the diffusion barrier of Cu film improves the adhesion of Cu film, however, and increases the resistance of Cu film. The introduction of oxygen into the deposition of CuCa film induces the improvement of adhesion and crystallinity of Cu film, but produces a slight increase of resistance. The increased resistance results from the partial oxidation of Cu film. The annealing process in vacuum further improves the adhesion, crystallinity and conductivity of Cu film. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) show that the CuCa alloy barrier layer deposited at oxygen atmosphere has perfect anti-diffusion between Cu film and substrate due to the formation of Ca oxide in the interface of CuCa/substrate.

  12. Photoelectrochemical activity of liquid phase deposited TiO2 film for degradation of benzotriazole.

    Science.gov (United States)

    Ding, Yaobin; Yang, Changzhu; Zhu, Lihua; Zhang, Jingdong

    2010-03-15

    TiO(2) film deposited on glassy carbon electrode surface was prepared via the liquid phase deposition (LPD). The deposited TiO(2) film before and after calcination was characterized with scanning electron microscopy (SEM) and X-ray diffraction (XRD). Based on the high photoelectrochemical activity of calcined LPD TiO(2) film, the photoelectrocatalytic degradation of benzotriazole (BTA) was investigated. Compared with the electrochemical oxidation process, direct photolysis or photocatalysis for treatment of BTA, a synergetic photoelectrocatalytic degradation effect was observed using the LPD TiO(2) film-coated electrode. Various factors influencing the photoelectrocatalytic degradation of BTA such as film calcination, applied bias potential, pH value, supporting electrolyte concentration and initial concentration of BTA were investigated. The COD removal for BTA solution was analyzed to evaluate the mineralization of the PEC process. Based on the degradation experimental results, a possible photoelectrocatalytic degradation mechanism for BTA was proposed.

  13. Photoelectrochemical activity of liquid phase deposited TiO{sub 2} film for degradation of benzotriazole

    Energy Technology Data Exchange (ETDEWEB)

    Ding Yaobin [College of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074 (China); Yang Changzhu [College of Environmental Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Zhu Lihua [College of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074 (China); Zhang Jingdong, E-mail: zhangjd@mail.hust.edu.cn [College of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074 (China)

    2010-03-15

    TiO{sub 2} film deposited on glassy carbon electrode surface was prepared via the liquid phase deposition (LPD). The deposited TiO{sub 2} film before and after calcination was characterized with scanning electron microscopy (SEM) and X-ray diffraction (XRD). Based on the high photoelectrochemical activity of calcined LPD TiO{sub 2} film, the photoelectrocatalytic degradation of benzotriazole (BTA) was investigated. Compared with the electrochemical oxidation process, direct photolysis or photocatalysis for treatment of BTA, a synergetic photoelectrocatalytic degradation effect was observed using the LPD TiO{sub 2} film-coated electrode. Various factors influencing the photoelectrocatalytic degradation of BTA such as film calcination, applied bias potential, pH value, supporting electrolyte concentration and initial concentration of BTA were investigated. The COD removal for BTA solution was analyzed to evaluate the mineralization of the PEC process. Based on the degradation experimental results, a possible photoelectrocatalytic degradation mechanism for BTA was proposed.

  14. Room temperature growth of biaxially aligned yttria-stabilized zirconia films on glass substrates by pulsed-laser deposition

    CERN Document Server

    Li Peng; Mazumder, J

    2003-01-01

    Room temperature deposition of biaxially textured yttria-stabilized zirconia (YSZ) films on amorphous glass substrates was successfully achieved by conventional pulsed-laser deposition. The influence of the surrounding gases, their pressure and the deposition time on the structure of the films was studied. A columnar growth process was revealed based on the experimental results. The grown biaxial texture appears as a kind of substrate independence, which makes it possible to fabricate in-plane aligned YSZ films on various substrates.

  15. Nanocrystalline Diamond Films Deposited by Electron Assisted Hot Filament Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.

  16. Stabilizing laser energy density on a target during pulsed laser deposition of thin films

    Science.gov (United States)

    Dowden, Paul C.; Jia, Quanxi

    2016-05-31

    A process for stabilizing laser energy density on a target surface during pulsed laser deposition of thin films controls the focused laser spot on the target. The process involves imaging an image-aperture positioned in the beamline. This eliminates changes in the beam dimensions of the laser. A continuously variable attenuator located in between the output of the laser and the imaged image-aperture adjusts the energy to a desired level by running the laser in a "constant voltage" mode. The process provides reproducibility and controllability for deposition of electronic thin films by pulsed laser deposition.

  17. Electrochemical preparation of lead-doped amorphous Se films and underpotential deposition of lead onto these films

    Science.gov (United States)

    Ivanov, Dmitry K.; Osipovich, Nikolay P.; Poznyak, Sergey K.; Streltsov, Eugene A.

    2003-06-01

    The process of the underpotential deposition (UPD) of Pb adatoms (Pb ad) onto Se was used to produce nanocomposite films consisting of amorphous Se and nanosized PbSe clusters distributed throughout the film bulk. It was found that doping lead into Se films modifies their optical and photoelectrochemical properties and increases the efficiency of the charge transfer both in the film bulk and through the semiconductor | electrolyte interface. Introducing lead into the bulk of Se films significantly promotes the process of Pb ad UPD onto Se surface. The underpotentially deposited Pb ad interact chemically with Se surface atoms, resulting in the formation of a PbSe monolayer. The PbSe formed can be identified by the anodic peak corresponding to its electrochemical oxidation.

  18. Iridium thin films deposited via pulsed laser deposition for future applications as transition-edge sensors

    Energy Technology Data Exchange (ETDEWEB)

    Galeazzi, M. E-mail: galeazzi@physics.miami.edu; Chen, C.; Cohn, J.L.; Gundersen, J.O

    2004-03-11

    The University of Miami has recently started developing and studying high-resolution microcalorimeters operating near 100 mK for X-ray and particle physics and astrophysics. These detectors will be based on Transition Edge Sensors technology fabricated using iridium thin films deposited via the Pulsed Laser Deposition technique. We report here the preliminary result of the room temperature characterization of the Ir thin films, and an overview of future plans to use the films as transition edge sensors.

  19. Low temperature temporal and spatial atomic layer deposition of TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Aghaee, Morteza, E-mail: m.aghaee@tue.nl; Maydannik, Philipp S. [ASTRaL Group, Laboratory of Green Chemistry, Lappeenranta University of Technology, Sammonkatu 12, 50130 Mikkeli (Finland); Johansson, Petri; Kuusipalo, Jurkka [Paper Converting and Packaging Technology, Tampere University of Technology, P.O. Box 541, FI-33101 Tampere (Finland); Creatore, Mariadriana [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Homola, Tomáš; Cameron, David C. [R& D Center for Low-Cost Plasma and Nanotechnology Surface Modification, Masaryk University, Kotlářská 2, 611 37 Brno (Czech Republic)

    2015-07-15

    Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80–120 °C) were used to grow moisture barrier TiO{sub 2} films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å/cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO{sub 2} films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO{sub 2}, but the deposition time could be reduced using SALD. The TiO{sub 2} films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 × 10{sup −4} g day{sup −1} m{sup −2} (38 °C and 90% RH) was measured for 20 nm of TiO{sub 2} film deposited by plasma-assisted ALD.

  20. Numerical simulations of rarefied gas flows in thin film processes

    NARCIS (Netherlands)

    Dorsman, R.

    2007-01-01

    Many processes exist in which a thin film is deposited from the gas phase, e.g. Chemical Vapor Deposition (CVD). These processes are operated at ever decreasing reactor operating pressures and with ever decreasing wafer feature dimensions, reaching into the rarefied flow regime. As numerical

  1. Numerical simulations of rarefied gas flows in thin film processes

    NARCIS (Netherlands)

    Dorsman, R.

    2007-01-01

    Many processes exist in which a thin film is deposited from the gas phase, e.g. Chemical Vapor Deposition (CVD). These processes are operated at ever decreasing reactor operating pressures and with ever decreasing wafer feature dimensions, reaching into the rarefied flow regime. As numerical simulat

  2. Photoluminescence Response in Carbon Films Deposited by Pulsed Laser Deposition onto GaAs Substrates at Low Vacuum

    Directory of Open Access Journals (Sweden)

    F. Caballero-Briones

    2016-01-01

    Full Text Available Carbon films were deposited onto GaAs substrates by pulsed laser deposition at low vacuum (10–15 mTorr from a graphite target. Films were prepared at different number of pulses (1500 to 6000 with fixed fluence (32 J/cm2, target-to-substrate distance, and pulse frequency using a Q:Switched Nd:YAG laser at 1064 nm operating at a frequency of 10 Hz and producing burst-mode pulses with total duration per shot of 49 ns. Films were characterized by optical microscopy, atomic force microscopy, laser induced breakdown spectroscopy, X-ray diffraction, and photoluminescence spectroscopy. Deposited films were visually smooth and adherent but on the other hand evidence of splashing was observed in all the films. Thickness varied linearly with the number of pulses from 8 to 42 μm with maximum height differences around 700 nm. Hexagonal and orthorhombic carbon was found in all the films and there was no evidence of nitrogen or oxygen incorporation during ablation process. Broad photoluminescence bands were observed and, particularly, emission peaks at 475–480 nm, 540–550 nm, 590 nm, and 625 nm. Bands tend to shift to lower wavelength with film thickness, suggesting that luminescence comes from splashed nanostructures influenced by the semiconducting substrate. This particular substrate effect is vanished as thickness of the films increases.

  3. Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

    OpenAIRE

    Roca i Cabarrocas, Pere; Cariou, Romain; Labrune, Martin

    2012-01-01

    International audience; We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of silicon nanocrystals and point toward silicon nanocrystals being the most p...

  4. Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

    2016-01-15

    It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

  5. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    Directory of Open Access Journals (Sweden)

    Florian Waltz

    2015-03-01

    Full Text Available In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps, a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step. In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

  6. Electrical Field Effects in Phthalocyanine Film Growth by Vapor Deposition

    Science.gov (United States)

    Banks, Curtis E.; Zhu, Shen; Frazier, Donald O.; Penn, Benjamin; Abdeldayem, Hossin; Hicks, Roslin; Sarkisov, Sergey

    1999-01-01

    Phthalocyanine, an organic material, is a very good candidate for non-linear optical application, such as high-speed switching and optical storage devices. Phthalocyanine films have been synthesized by vapor deposition on quartz substrates. Some substrates were coated with a very thin gold film for introducing electrical field. These films have been characterized by surface morphology, material structure, chemical and thermal stability, non-linear optical parameters, and electrical behaviors. The films have excellent chemical and optical stability. However, the surface of these films grown without electrical field shows flower-like morphology. When films are deposited under an electrical field ( an aligned structure is revealed on the surface. A comparison of the optical and electrical properties and the growth mechanism for these films grown with and without an electrical field will be discussed.

  7. Characterization and Electrical Properties of TiO2 Thin Films Deposited by Pulsed Laser Deposition

    Science.gov (United States)

    Badar, Nurhanna; Kamarulzaman, Norlida

    2011-12-01

    Thin film technology is very important in today's high-tech industry. TiO2 is a high-k dielectric material. Problems with thin film deposition arise when the thickness of the thin layers approaches a few hundred nm to less than 100 nm. High quality thin films within these dimensions are difficult to obtain. Issues of adhesion, crystal mismatch, crystal orientation, surface roughness, densification, etc. are problems that need to be addressed if good quality thin films for devices are to be fabricated. These factors have a relation with the thin film technique used. As an example, spin coating technique may be a cheaper technique but may not result in dense and very smooth surfaces. Pulsed LASER deposition (PLD) is a relatively newer method used in thin film fabrication. The advantages of PLD are, capability of very thin films being deposited on different types of substrates (up to monolayers), control of crystal orientation, capability of depositing materials with complex stoichiometry and ease of methodology with high throughput. This has industrial implications as a good method for thin film preparation. This work involves the deposition of TiO2 thin films using different deposition parameters and chamber environments.

  8. Corrosion resistance of various bio-films deposited on austenitic cast steel casted by lost-wax process and in gypsum mould

    Directory of Open Access Journals (Sweden)

    J. Gawroński

    2010-01-01

    Full Text Available This work is the next of a series concerning the improvement of austenitic cast steel utility predicted for use in implantology for complicated long term implants casted by lost-wax process and in gypsum mould. Austenitic cast steel possess chemical composition of AISI 316L medical steel used for implants. In further part of present work investigated cast steel indicated as AISI 316L medical steel. Below a results of electrochemical corrosion resistance of carbon layer and bi-layer of carbon/HAp deposited on AISI 316L researches are presented. Coatings were manufactured by RF PACVD and PLD methods respectively. Obtained results, unequivocally indicates on the improvement of this type of corrosion resistance by substrate material with as deposited carbon layer. While bi-layer of carbon/HAp are characterized by very low corrosion resistance.

  9. Ion beam analysis of copper selenide thin films prepared by chemical bath deposition

    Science.gov (United States)

    Andrade, E.; García, V. M.; Nair, P. K.; Nair, M. T. S.; Zavala, E. P.; Huerta, L.; Rocha, M. F.

    2000-03-01

    Analyses of Rutherford back scattered (RBS) 4He+-particle spectra of copper selenide thin films deposited on glass slides by chemical bath were carried out to determine the changes brought about in the thin film by annealing processes. The atomic density per unit area and composition of the films were obtained from these measurements. This analysis shows that annealing in a nitrogen atmosphere at 400°C leads to the conversion of Cu xSe thin film to Cu 2Se. Results of X-ray diffraction, optical, and electrical characteristics on the films are presented to supplement the RBS results.

  10. n-type In2S3 films deposited by pulsed laser deposition: effect of laser power on the properties of the films

    Science.gov (United States)

    Wu, Chunyan; Mao, Dun; Liu, Zhu; Liang, Qi; Chen, Shirong; Yu, Yongqiang; Wang, Li; Luo, Linbao; Xu, Jun

    2015-05-01

    Pulsed laser deposition (PLD) with different levels of laser power was first used to deposit In2S3 films from homemade, high-purity In2S3 targets. This process was followed by post-annealing in an N2 atmosphere to improve the films’ crystallinity and conductivity. The annealed films were verified to be stoichiometric, body-centered, tetragonal In2S3 with the preferred orientation (103). The bandgap of the films decreased from 2.8 to 2.2 eV with an increase in the laser power, which was believed to be the result of the grain growth caused by the higher laser power. The electrical transport property of the bottom-gate field-effect transistor revealed the n-type conduction of the annealed In2S3 films, and the heterojunction p+-Si/annealed In2S3 film showed remarkable photovoltaic behavior upon light illumination, indicating that PLD-deposited In2S3 films may have great potential as a buffer layer in thin-film solar cells. What’s more, doped In2S3 films can be easily realized due to the fairly stoichiometric transfer of the PLD method.

  11. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dongya; Dong, Guangneng, E-mail: donggn@mail.xjtu.edu.cn; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-30

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm{sup 2} for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  12. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    Science.gov (United States)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  13. Process for fabrication of metal oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Tracy, C.E.; Benson, D.; Svensson, S.

    1990-07-17

    This invention is comprised of a method of fabricating metal oxide films from a plurality of reactants by inducing a reaction by plasma deposition among the reactants. The plasma reaction is effective for consolidating the reactants and producing thin films of metal oxides, e.g. electro-optically active transition metal oxides, at a high deposition rate. The presence of hydrogen during the plasma reaction enhances the deposition rate of the metal oxide. Various types of metal oxide films can be produced.

  14. Preparation of Nano-Particles (Pb,La)TiO3 Thin Films by Liquid Source Misted Chemical Deposition

    Institute of Scientific and Technical Information of China (English)

    张之圣; 曾建平; 李小图

    2004-01-01

    Nano-particles lanthanum-modified lead titanate (PLT) thin films are grown on Pt/Ti/SiO2/Si substrate by liquid source misted chemical deposition (LSMCD). PLT films are deposited for 4-8 times, and then annealed at various temperature. XRD and SEM show that the prepared films have good crystallization behavior and perovskite structure. The crystallite is about 60 nm. The deposition speed is 3 nm/min. This deposition method can exactly control stoichiometry ratios, doping concentration ratio and thickness of PLT thin films. The best annealing process is to bake at 300 ℃ for 10 min and anneal at 600 ℃ for 1 h.

  15. Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

    Directory of Open Access Journals (Sweden)

    J.K. Rath

    2010-01-01

    Full Text Available Nanostructured thin silicon-based films have been deposited using the hot-wire chemical vapour deposition (HWCVD technique at the University of the Western Cape. A variety of techniques including optical and infrared spectroscopy, Raman scattering spectroscopy, X-rays diffraction (XRD and transmission electron microscopy (TEM have been used for characterisation of the films. The electrical measurements show that the films have good values of photoresponse, and the photocurrent remains stable after several hours of light soaking. This contribution will discuss the characteristics of the hydrogenated nanocrystalline silicon thin films deposited using increased process chamber pressure at a fixed hydrogen dilution ratio in monosilane gas.

  16. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  17. Chemical bath ZnSe thin films: deposition and characterisation

    Science.gov (United States)

    Lokhande, C. D.; Patil, P. S.; Ennaoui, A.; Tributsch, H.

    1998-01-01

    The zinc selenide (ZnSe) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method. The selenourea was used as a selenide ion source. The ZnSe films have been characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDAX), Rutherford back scattering (RBS), and optical absorption. The as-deposited ZnSe films on various substrates are found to be amorphous and contain O2 and N2 in addition to Zn and Se. The optical band gap of the film is estimated to be 2.9 eV. The films are photoactive as evidenced by time resolved microwave conductivity (TRMC).

  18. Synthesis and deposition of metal nanoparticles by gas condensation process

    Energy Technology Data Exchange (ETDEWEB)

    Maicu, Marina, E-mail: marina.maicu@fep.fraunhofer.de; Glöß, Daniel; Frach, Peter [Fraunhofer Institut für Elektronenstrahl und Plasmatechnik, FEP, Winterbergstraße 28, 01277 Dresden (Germany); Schmittgens, Ralph; Gerlach, Gerald [Institut für Festkörperelektronik, IFE, TU Dresden, Helmholtz Straße 18, 01069 Dresden (Germany); Hecker, Dominic [Fraunhofer Institut für Elektronenstrahl und Plasmatechnik, FEP, Winterbergstraße 28, 01277 Dresden, Germany and Institut für Festkörperelektronik, IFE, TU Dresden, Helmholtz Straße 18, 01069 Dresden (Germany)

    2014-03-15

    In this work, the synthesis of Pt and Ag nanoparticles by means of the inert gas phase condensation of sputtered atomic vapor is presented. The process parameters (power, sputtering time, and gas flow) were varied in order to study the relationship between deposition conditions and properties of the nanoparticles such as their quantity, size, and size distribution. Moreover, the gas phase condensation process can be combined with a plasma enhanced chemical vapor deposition procedure in order to deposit nanocomposite coatings consisting of metallic nanoparticles embedded in a thin film matrix material. Selected examples of application of the generated nanoparticles and nanocomposites are discussed.

  19. Chemical solution deposition of CaCu3Ti4O12 thin film

    Indian Academy of Sciences (India)

    Viswanathan S Saji; Han Cheol Choe

    2010-06-01

    CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was ∼ 2000 and tan ∼ 0.05.

  20. The Effects of Sputtering Target Preparation and Deposition Temperature on ZnTe:Cu Film Properties

    Energy Technology Data Exchange (ETDEWEB)

    Faulkner, Brooke R.; Ohno, T. R.; Burst, James M.; Duenow, Joel N.; Perkins, Craig L.; To, Bobby; Gessert, Timothy A.

    2015-06-14

    A back contact containing a sputtered ZnTe:Cu interface layer can produce high-performing thin-film CdS/CdTe photovoltaic devices. We have found that varying the ZnTe:Cu sputtering target fabrication processes and deposition temperature can affect material properties of the ZnTe:Cu films and the resulting device performance. Two different target 'recipes' with various copper contents were used to study changes in the compositional, structural, optical, and electrical properties of ZnTe:Cu films. Substrate temperature during deposition was also varied to investigate the temperature dependence of the films. It was found that the target recipe, Cu concentration in the target, and deposition temperature affect the composition of the ZnTe:Cu films, which impacts their structural, optical, and electrical properties.

  1. Morphology Simulation for Ion-Assisted Deposition Process

    Institute of Scientific and Technical Information of China (English)

    Jenn-SenLin; Shin-PonJu; Jian-MingLu

    2004-01-01

    The molecular dynamics simulation is applied to investigate the lnfluence of the incident 1on energy ana mclident angular distribution upon ion-assisted deposition process. The Cu-Cu and Ar-Cu interactions are modeled using the many body tight-binding potential and the Moliere potential, respectively, and the interface width is used to characterize the surface roughness properties at both transient and final state conditions. The results show that the surface roughness of the deposition film is lower when more Ar-to-Cu ratio is used at the same incident energy and angle. For the relative low or high incident energy, the film morphologies are not sensitive to the incident angle. However, if the incident energy of the argon ions is too high, the film morphology will be worse than that without using the ion-assisted deposition.

  2. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  3. Continuous wave infrared laser deposition of organic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yaginuma, Seiichiro [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Yamaguchi, Jun [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Haemori, Masamitsu [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Itaka, Kenji [Department of Advanced Materials Science, Graduate School of Frontier Sciences, Univesity of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8568 (Japan); Matsumoto, Yuji [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Kondo, Michio [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503 (Japan); Koinuma, Hideomi [Department of Advanced Materials Science, Graduate School of Frontier Sciences, Univesity of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8568 (Japan)

    2007-04-15

    We developed a continuous-wave infrared laser molecular beam epitaxy (CW-IR-LMBE) optimized for the fabrication of organic semiconductor films. The crystal quality of these organic thin films deposited by CW-IR-LMBE was substantially the same as those deposited by thermal evaporation. Due to the possibility of quick switching of evaporation sources, CW-IR-LMBE is especially advantageous for rapid screening of composition, thickness, and fabrication parameters in materials and device optimization based on combinatorial technology.

  4. Pulsed laser deposition of AlMgB14 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  5. Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

    Institute of Scientific and Technical Information of China (English)

    Ren Wan-Chun; Liu Bo; Song Zhi-Tang; Xiang Yang-Hui; Wang Zong-Tao; Zhang Bei-Chao; Feng Song-Lin

    2012-01-01

    Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture.Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality,purity,and accurate composition control.However,the conventional physical vapor deposition process cannot meet the gapfilling requirement with the critical device dimension scaling down to 90 nm or below.In this study,we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process,especially at the nano-scale critical dimension.The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed.We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling.We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process.We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.

  6. Hardness and stress of amorphous carbon film deposited by glow discharge and ion beam assisting deposition

    CERN Document Server

    Marques, F C

    2000-01-01

    The hardness and stress of amorphous carbon films prepared by glow discharge and by ion beam assisting deposition are investigated. Relatively hard and almost stress free amorphous carbon films were deposited by the glow discharge technique. On the other hand, by using the ion beam assisting deposition, hard films were also obtained with a stress of the same order of those found in tetrahedral amorphous carbon films. A structural analysis indicates that all films are composed of a sp sup 2 -rich network. These results contradict the currently accepted concept that both stress and hardness are only related to the concentration of sp sup 3 sites. Furthermore, the same results also indicate that the sp sup 2 sites may also contribute to the hardness of the films.

  7. CdS thin films prepared by laser assisted chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, L.V.; Mendivil, M.I.; Garcia Guillen, G.; Aguilar Martinez, J.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Krishnan, B. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Avellaneda, D.; Castillo, G.A.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Ciudad Universitaria, San Nicolas de los Garza, Nuevo Leon 66450 (Mexico); CIIDIT – Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • CdS thin films by conventional CBD and laser assisted CBD. • Characterized these films using XRD, XPS, AFM, optical and electrical measurements. • Accelerated growth was observed in the laser assisted CBD process. • Improved dark conductivity and good photocurrent response for the LACBD CdS. - Abstract: In this work, we report the preparation and characterization of CdS thin films by laser assisted chemical bath deposition (LACBD). CdS thin films were prepared from a chemical bath containing cadmium chloride, triethanolamine, ammonium hydroxide and thiourea under various deposition conditions. The thin films were deposited by in situ irradiation of the bath using a continuous laser of wavelength 532 nm, varying the power density. The thin films obtained during deposition of 10, 20 and 30 min were analyzed. The changes in morphology, structure, composition, optical and electrical properties of the CdS thin films due to in situ irradiation of the bath were analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV–vis spectroscopy. The thin films obtained by LACBD were nanocrystalline, photoconductive and presented interesting morphologies. The results showed that LACBD is an effective synthesis technique to obtain nanocrystalline CdS thin films having good optoelectronic properties.

  8. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  9. Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

    Science.gov (United States)

    Batra, Neha; Gope, Jhuma; Vandana, Panigrahi, Jagannath; Singh, Rajbir; Singh, P. K.

    2015-06-01

    The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, QF. The interface defect density (Dit) decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min).

  10. Characterization of polymer thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Palla-Papavlu, A.; Dinca, V.; Ion, V.; Moldovan, A.; Mitu, B.; Luculescu, C.; Dinescu, M.

    2011-04-01

    The development of laser techniques for the deposition of polymer and biomaterial thin films on solid surfaces in a controlled manner has attracted great attention during the last few years. Here we report the deposition of thin polymer films, namely Polyepichlorhydrin by pulsed laser deposition. Polyepichlorhydrin polymer was deposited on flat substrate (i.e. silicon) using an NdYAG laser (266 nm, 5 ns pulse duration and 10 Hz repetition rate). The obtained thin films have been characterized by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. It was found that for laser fluences up to 1.5 J/cm 2 the chemical structure of the deposited polyepichlorhydrin polymer thin layers resembles to the native polymer, whilst by increasing the laser fluence above 1.5 J/cm 2 the polyepichlorohydrin films present deviations from the bulk polymer. Morphological investigations (atomic force microscopy and scanning electron microscopy) reveal continuous polyepichlorhydrin thin films for a relatively narrow range of fluences (1-1.5 J/cm 2). The wavelength dependence of the refractive index and extinction coefficient was determined by ellipsometry studies which lead to new insights about the material. The obtained results indicate that pulsed laser deposition method is potentially useful for the fabrication of polymer thin films to be used in applications including electronics, microsensor or bioengineering industries.

  11. Vacuum deposition onto webs, films and foils

    CERN Document Server

    Bishop, Charles A

    2011-01-01

    Roll-to-roll vacuum deposition is the technology that applies an even coating to a flexible material that can be held on a roll and provides a much faster and cheaper method of bulk coating than deposition onto single pieces or non-flexible surfaces, such as glass. This technology has been used in industrial-scale applications for some time, including a wide range of metalized packaging (e.g. snack packets). Its potential as a high-speed, scalable process has seen an increasing range of new products emerging that employ this cost-effective technology: solar energy products are moving from rigid panels onto flexible substrates, which are cheaper and more versatile; in a similar way, electronic circuit 'boards' can be produced on a flexible polymer, creating a new range of 'flexible electronics' products; and, flexible displays are another area of new technology in vacuum coating, with flexible display panels and light sources emerging. Charles Bishop has written this book to meet the need he identified, as a t...

  12. Stress development during deposition of CNx thin films

    Science.gov (United States)

    Broitman, E.; Zheng, W. T.; Sjöström, H.; Ivanov, I.; Greene, J. E.; Sundgren, J.-E.

    1998-05-01

    We have investigated the influence of deposition parameters on stress generation in CNx (0.3films deposited onto Si(001) substrates by reactive magnetron sputtering of C in pure N2 discharges. Film stress, σ, which in all cases is compressive, decreases with an increase in the N2 pressure, PN2, due to structural changes induced by the pressure-dependent variation in the average energy of particles bombarding the film during deposition. The film stress σ is also a function of the film growth temperature, Ts, and exhibits a maximum value of ˜5 GPa at 350 °C. Under these conditions, the films have a distorted microstructure consisting of a three-dimensional, primarily sp2 bonded, network. In contrast, films deposited at Ts<200 °C with a low stress are amorphous. At 350 °Cfilms grown at 350 °C exhibit the highest hardness and elasticity.

  13. Optical and mechanical properties of diamond like carbon films deposited by microwave ECR plasma CVD

    Indian Academy of Sciences (India)

    S B Singh; M Pandey; N Chand; A Biswas; D Bhattacharya; S Dash; A K Tyagi; R M Dey; S K Kulkarni; D S Patil

    2008-10-01

    Diamond like carbon (DLC) films were deposited on Si (111) substrates by microwave electron cyclotron resonance (ECR) plasma chemical vapour deposition (CVD) process using plasma of argon and methane gases. During deposition, a d.c. self-bias was applied to the substrates by application of 13.56 MHz rf power. DLC films deposited at three different bias voltages (–60 V, –100 V and –150 V) were characterized by FTIR, Raman spectroscopy and spectroscopic ellipsometry to study the variation in the bonding and optical properties of the deposited coatings with process parameters. The mechanical properties such as hardness and elastic modulus were measured by load depth sensing indentation technique. The DLC film deposited at –100 V bias exhibit high hardness (∼ 19 GPa), high elastic modulus (∼ 160 GPa) and high refractive index (∼ 2.16–2.26) as compared to films deposited at –60 V and –150 V substrate bias. This study clearly shows the significance of substrate bias in controlling the optical and mechanical properties of DLC films.

  14. Characterization of sputter-deposited TiPdNi thin films

    Institute of Scientific and Technical Information of China (English)

    田青超; 吴建生

    2002-01-01

    TiPdNi thin films were prepared by magne tron sputtering onto unheated glass and silicon substrate. Atomic force microscope, energy-dispersive X-ray mi croanalyzer, X-ray diffractometer, differential scanning calorimeter and optical microscope were used to characterize the films. It is found that the surface m orphology of the films change during the sputtering process and a shift of about 3%Ti(mole fraction) content from the center to the edge of the substrate occurs. The freestanding as-deposited films undergo crystallization followed by three kinds of cooling conditions. For all these heat-treated films, B2→B19→B19′ two- stage phase transformation takes place. Many Ti2Ni and Ti2Pd type of precipitates are detected in the films. The constraint films on silicon substrate are crystallized at high temperature. After crystallization, the films show a two-way shape memory effect.

  15. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  16. Characterization of CdTe films deposited at various bath temperatures and concentrations using electrophoretic deposition.

    Science.gov (United States)

    Daud, Mohd Norizam Md; Zakaria, Azmi; Jafari, Atefeh; Ghazali, Mohd Sabri Mohd; Abdullah, Wan Rafizah Wan; Zainal, Zulkarnain

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  17. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    Zulkarnain Zainal

    2012-05-01

    Full Text Available CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111 orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the CdTe film increased with the increase of CdTe concentration. The optical energy band gap of film decreased with the increase of CdTe concentration, and with the increase of isothermal bath temperature. The film thickness increased with respect to the increase of CdTe concentration and bath temperature, and following, the numerical expression for the film thickness with respect to these two variables has been established.

  18. Sputter-deposited Mg-Al-O thin films: linking molecular dynamics simulations to experiments

    Energy Technology Data Exchange (ETDEWEB)

    Georgieva, V; Bogaerts, A [PLASMANT Research Group, Department of Chemistry, University of Antwerp, Universiteitsplein 1, 2610 Antwerp (Belgium); Saraiva, M; Depla, D [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Gent (Belgium); Jehanathan, N; Lebelev, O I, E-mail: violeta.georgieva@ua.ac.b [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B2020 Antwerpen (Belgium)

    2009-03-21

    Using a molecular dynamics model the crystallinity of Mg{sub x}Al{sub y}O{sub z} thin films with a variation in the stoichiometry of the thin film is studied at operating conditions similar to the experimental operating conditions of a dual magnetron sputter deposition system. The films are deposited on a crystalline or amorphous substrate. The Mg metal content in the film ranged from 100% (i.e. MgO film) to 0% (i.e. Al{sub 2}O{sub 3} film). The radial distribution function and density of the films are calculated. The results are compared with x-ray diffraction and transmission electron microscopy analyses of experimentally deposited thin films by the dual magnetron reactive sputtering process. Both simulation and experimental results show that the structure of the Mg-Al-O film varies from crystalline to amorphous when the Mg concentration decreases. It seems that the crystalline Mg-Al-O films have a MgO structure with Al atoms in between.

  19. Physical aspects of the pulsed laser deposition technique: The stoichiometric transfer of material from target to film

    DEFF Research Database (Denmark)

    Schou, Jørgen

    2009-01-01

    The physical processes of pulsed laser deposition (PLD) change strongly from the initial light absorption in a target to the final deposition and growth of a film. One of the primary advantages of PLD is the stoichiometric transfer of material from target to a film on a substrate. Even for a stoi...

  20. Ubiquitous pentacene monolayer on metals deposited onto pentacene films.

    Science.gov (United States)

    Jaeckel, B; Sambur, J B; Parkinson, B A

    2007-11-01

    Photoelectron spectroscopy (XPS and UPS) was used to study the deposition of metal layers (Ag, Cu, and Au) onto pentacene films. Very low work functions were measured (PhiAg = 3.91 eV, PhiCu = 3.93 eV, and PhiAu = 4.3 eV) for all of the metals, in agreement with results from the literature. The intensities of the C 1s core-level signals from pentacene that were monitored during stepwise metal deposition leveled off at a value of about 30% of a thick pentacene film. This C 1s intensity is comparable to that of one monolayer of pentacene deposited onto the respective metal. The valence band spectra of metals deposited onto pentacene and spectra collected for pentacene deposited onto bare metal surfaces are very similar. These findings lead to the conclusion that approximately one monolayer of pentacene is always present on top of the freshly deposited metal film, which explains the very low work function of the metals when they are deposited onto organic films. We expect similar behavior with other nonreactive metals deposited onto stable organic layers.

  1. Stoichiometry controlled oxide thin film growth by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, Rik; Smit, Jasper; Orsel, Kasper; Vailionis, Arturas; Bastiaens, Bert; Huijben, Mark; Boller, Klaus; Rijnders, Guus; Koster, Gertjan

    2015-01-01

    The oxidation of species in the plasma plume during pulsed laser deposition controls both the stoichiometry as well as the growth kinetics of the deposited SrTiO3 thin films, instead of the commonly assumed mass distribution in the plasma plume and the kinetic energy of the arriving species. It was

  2. Engineering the Crystalline Morphology of Polymer Thin Films via Physical Vapor Deposition

    Science.gov (United States)

    Jeong, Hyuncheol; Arnold, Craig; Priestley, Rodney

    Thin-film growth via physical vapor deposition (PVD) has been successfully exploited for the delicate control of film structure for molecular and atomic systems. The application of such a high-energetic process to polymeric film growth has been challenged by chemical degradation. However, recent development of Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique opened up a way to deposit a variety of macromolecules in a PVD manner. Here, employing MAPLE technique to the growth of semicrystalline polymer thin films, we show the engineering of crystalline film morphology can be achieved via manipulation of substrate temperature. This is accomplished by exploiting temperature effect on crystallization kinetics of polymers. During the slow film growth crystallization can either be permitted or suppressed, and crystal thickness can be tuned via temperature modulation. In addition, we report that the crystallinity of polymer thin films may be significantly altered with deposition temperature in MAPLE processing. We expect that this ability to manipulate crystallization kinetics during polymeric film growth will open the possibility to engineer structure in thin film polymeric-based devices in ways that are difficult by other means.

  3. Vacuum deposition of stoichiometric crystalline PbS films: The effect of sulfurizing environment during deposition

    Science.gov (United States)

    Singh, B. P.; Kumar, R.; Kumar, A.; Tyagi, R. C.

    2015-10-01

    Thin film of lead sulfide (PbS) was deposited onto highly cleaned glass and quartz substrates using a vacuum thermal evaporation technique. The effect of the sulfurizing environment on the growth and properties of vacuum-deposited PbS thin film was studied. The ambient sulfurizing environment was created by thermal decomposition of thiourea inside the vacuum chamber during deposition to maintain the stoichiometry and quality of the PbS film. The sulfurizing gas H2S, produced in the thermal decomposition of the solid sulfur containing thiourea readily combines with the cations (Pb2+) without leaving any anions (S2-) at the substrates and also has not produced any excess of sulfur at the substrates. The deposited film was characterized by optical spectroscopy, x-ray diffraction patterns, scanning electron micrographs with energy dispersive analysis of x-rays, and atomic force micrographs. The physical characterization of the deposited PbS film revealed that the surface of film grown in the sulfurizing environment improved and contained more stoichiometric sulfur in comparison to film deposited without the sulfurizing environment.

  4. Ag Nanodots Emitters Embedded in a Nanocrystalline Thin Film Deposited on Crystalline Si Solar Cells.

    Science.gov (United States)

    Park, Seungil; Ryu, Sel Gi; Ji, HyungYong; Kim, Myeong Jun; Peck, Jong Hyeon; Kim, Keunjoo

    2016-06-01

    We fabricated crystalline Si solar cells with the inclusion of various Ag nanodots into the additional emitters of nanocrystallite Si thin films. The fabricated process was carried out on the emitter surface of p-n junction for the textured p-type wafer. The Ag thin films were deposited on emitter surfaces and annealed at various temperatures. The amorphous Si layers were also deposited on the Ag annealed surfaces by hot-wire chemical vapor deposition and then the deposited layers were doped by the second n-type doping process to form an additional emitter. From the characterization, both the Ag nanodots and the deposited amorphous Si thin films strongly reduce photo-reflectances in a spectral region between 200-400 nm. After embedding Ag nanodots in nanocrystallite Si thin films, a conversion efficiency of the sample with added emitter was achieved to 15.1%, which is higher than the 14.1% of the reference sample and the 14.7% of the de-posited sample with a-Si:H thin film after the Ag annealing process. The additional nanocrystallite emitter on crystalline Si with Ag nanodots enhances cell properties.

  5. Thin-film organic photonics molecular layer deposition and applications

    CERN Document Server

    Yoshimura, Tetsuzo

    2011-01-01

    Among the many atomic/molecular assembling techniques used to develop artificial materials, molecular layer deposition (MLD) continues to receive special attention as the next-generation growth technique for organic thin-film materials used in photonics and electronics. Thin-Film Organic Photonics: Molecular Layer Deposition and Applications describes how photonic/electronic properties of thin films can be improved through MLD, which enables precise control of atomic and molecular arrangements to construct a wire network that achieves ""three-dimensional growth"". MLD facilitates dot-by-dot--o

  6. Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition.

    Science.gov (United States)

    D'Arcy, Julio M; Tran, Henry D; Stieg, Adam Z; Gimzewski, James K; Kaner, Richard B

    2012-05-21

    A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.

  7. Nitrogen oxides and ammonia sensing characteristics of SILAR deposited ZnO thin film

    Science.gov (United States)

    Lupan, O. I.; Shishiyanu, S. T.; Shishiyanu, T. S.

    2007-07-01

    Pure and Sn, Ni doped ZnO thin films were deposited on glass substrates using a novel successive ionic layer adsorption and reaction (SILAR) method at room temperature. Microstructures of the deposited films were optimized by adjusting growth parameters. The variation in resistivity of the ZnO film sensors was performed with rapid photothermal processing (RPP). The effect of rapid photothermal processing was found to have an important role in ZnO based sensor sensitivity to NO 2, NH 3. While the undoped ZnO film surface exhibited higher NH 3 sensitivity than that of NO 2, an enhanced NO 2 sensitivity was noticed for the ZnO films doped with Sn and higher NH 3 sensitivity was obtained by Ni doping.

  8. Laser assisted modification and chemical metallization of electron-beam deposited ceria thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krumov, E., E-mail: emodk@clf.bas.bg [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Starbov, N.; Starbova, K. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria); Perea, A.; Solis, J. [Instituto de Optica ' Daza de Valdes' , CSIC, 28006 Madrid (Spain)

    2009-11-15

    Excimer laser processing is applied for tailoring the surface morphology and phase composition of CeO{sub 2} ceramic thin films. E-beam evaporation technique is used to deposit samples on stainless steel and silicate glass substrates. The films are then irradiated with ArF* excimer laser pulses under different exposure conditions. Scanning electron microscopy, optical spectrophotometry, X-ray diffractometry and EDS microanalysis are used to characterize the non-irradiated and laser-processed films. Upon UV laser exposure there is large increase of the surface roughness that is accompanied by photo-darkening and ceria reduction. It is shown that the laser induced changes in the CeO{sub 2} films facilitate the deposition of metal nano-aggregates in a commercial copper electroless plating bath. The significance of laser modification as a novel approach for the production of CeO{sub 2} based thin film catalysts is discussed.

  9. Doped Titanium Dioxide Films Prepared by Pulsed Laser Deposition Method

    Directory of Open Access Journals (Sweden)

    Juguang Hu

    2012-01-01

    Full Text Available TiO2 was intensively researched especially for photocatalystic applications. The nitrogen-doped TiO2 films prepared by pulsed laser deposition (PLD method were reviewed, and some recent new experimental results were also presented in this paper. A new optical transmission method for evaluating the photocatalystic activity was presented. The main results are (1 PLD method is versatile for preparing oxide material or complex component films with excellent controllability and high reproducibility. (2 Anatase nitrogen-doped TiO2 films were prepared at room temperature, 200°C, and 400°C by PLD method using novel ceramic target of mixture of TiN and TiO2. UV/Vis spectra, AFM, Raman spectra, and photocatalystic activity for decomposition of methyl orange (MO tests showed that visible light response was improved at higher temperature. (3 The automatic, continuous optical transmission autorecorder method is suitable for detecting the photodecomposition dynamic process of organic compound.

  10. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  11. Aluminosilicate glass thin films elaborated by pulsed laser deposition

    Science.gov (United States)

    Carlier, Thibault; Saitzek, Sébastien; Méar, François O.; Blach, Jean-François; Ferri, Anthony; Huvé, Marielle; Montagne, Lionel

    2017-03-01

    In the present work, we report the elaboration of aluminosilicate glass thin films by Pulsed Laser Deposition at various temperatures deposition. The amorphous nature of glass thin films was highlighted by Grazing Incidence X-Ray Diffraction and no nanocristallites were observed in the glassy matrix. Chemical analysis, obtained with X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy, showed a good transfer and homogeneous elementary distribution with of chemical species from the target to the film a. Structural studies performed by Infrared Spectroscopy showed that the substrate temperature plays an important role on the bonding configuration of the layers. A slight shift of Si-O modes to larger wavenumber was observed with the synthesis temperature, assigned to a more strained sub-oxide network. Finally, optical properties of thins film measured by Spectroscopic Ellipsometry are similar to those of the bulk aluminosilicate glass, which indicate a good deposition of aluminosilicate bulk glass.

  12. Picosecond and subpicosecond pulsed laser deposition of Pb thin films

    Directory of Open Access Journals (Sweden)

    F. Gontad

    2013-09-01

    Full Text Available Pb thin films were deposited on Nb substrates by means of pulsed laser deposition (PLD with UV radiation (248 nm, in two different ablation regimes: picosecond (5 ps and subpicosecond (0.5 ps. Granular films with grain size on the micron scale have been obtained, with no evidence of large droplet formation. All films presented a polycrystalline character with preferential orientation along the (111 crystalline planes. A maximum quantum efficiency (QE of 7.3×10^{-5} (at 266 nm and 7 ns pulse duration was measured, after laser cleaning, demonstrating good photoemission performance for Pb thin films deposited by ultrashort PLD. Moreover, Pb thin film photocathodes have maintained their QE for days, providing excellent chemical stability and durability. These results suggest that Pb thin films deposited on Nb by ultrashort PLD are a noteworthy alternative for the fabrication of photocathodes for superconductive radio-frequency electron guns. Finally, a comparison with the characteristics of Pb films prepared by ns PLD is illustrated and discussed.

  13. UV laser deposition of metal films by photogenerated free radicals

    Science.gov (United States)

    Montgomery, R. K.; Mantei, T. D.

    1986-01-01

    A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

  14. In situ X-ray diffraction based investigation of crystallization in solution deposited PZT thin films

    Science.gov (United States)

    Nittala, Krishna

    Solution deposited PZT based thin films have potential applications in embedded decoupling capacitors and pulse discharge capacitors. During solution deposition, precursor solution is deposited onto a substrate to obtain an amorphous film. The film is then crystallized by heating it at a high temperature (˜600 - 700°C). Conditions during the crystallization anneal such as precursor stoichiometry in solution, heating rate and adhesion layer in the substrate are known to influence phase and texture evolution in these films. However, a mechanistic understanding of the changes taking place in these thin films during crystallization is lacking. A better understanding of the crystallization processes in these thin films could enable tailoring the properties of thin films to suit specific applications. To explore the crystallization process in solution deposited PZT thin films, high temperature in situ laboratory and synchrotron X-ray diffraction based techniques were developed. Taking advantage of the high X-ray flux available at synchrotron facilities such as beamline 6-ID-B, Advanced Photon Source, Argonne National Laboratory, crystalline phases formed in the thin films during crystallization at the high heating rates (0.5 -- 60°C/s) typically used during film processing could be measured. Using a 2-D detector for these measurements allowed the simultaneous measurement of both phase and texture information during crystallization. Analytical treatment of the unconventional diffraction geometry used during the synchrotron based measurements was performed to develop methodologies for quantitative estimation of texture components. The nominal lead content in the starting solutions and the heating rate used during crystallization was observed to influence the sequence of phases formed during crystallization of the films. In films crystallized at fast heating rates, titanium segregation, probably due to diffusion of titanium from the adhesion layer, was observed. To

  15. Mechanical, tribological and corrosion properties of CrBN films deposited by combined direct current and radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Jahodova, Vera [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Koszalin University of Technology, Sniadeckich 2, 75-0453 Koszalin (Poland); Technical University of Liberec, Studentska 1402/2, 461 17 Liberec1 (Czech Republic); Ding, Xing-zhao, E-mail: xzding@SIMTech.a-star.edu.sg [Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 (Singapore); Seng, Debbie H.L. [Institute of Materials Research and Engineering, 3 Research Link, 117602 (Singapore); Gulbinski, W. [Koszalin University of Technology, Sniadeckich 2, 75-0453 Koszalin (Poland); Louda, P. [Technical University of Liberec, Studentska 1402/2, 461 17 Liberec1 (Czech Republic)

    2013-10-01

    Cr–B–N films were deposited on stainless steel substrates by a combined direct current and radio frequency (RF) reactive unbalanced magnetron sputtering process using two elemental Cr and one compound BN targets. Boron content in the as-deposited films was qualitatively analyzed by time-of-flight secondary ion mass spectroscopy. Films' microstructure, mechanical and tribological properties were characterized by X-ray diffraction, nanoindentation and pin-on-disk tribometer experiments. Corrosion behavior of the Cr–B–N films was evaluated by electrochemical potentiodynamic polarization method in a 3 wt.% NaCl solution. All the films were crystallized into a NaCl-type cubic structure. At lower RF power applied on the BN target (≤ 600 W), films are relatively randomly oriented, and films' crystallinity increased with increasing RF power. With increasing RF power further (≥ 800 W), films became (200) preferentially oriented, and films' crystallinity decreased gradually. With incorporation of a small amount of boron atoms into the CrN films, hardness, wear- and corrosion-resistance were all improved evidently. The best wear and corrosion resistance was obtained for the film deposited with 600 W RF power applied on the BN target. - Highlights: • CrBN films deposited by direct current and radio frequency magnetron sputtering. • CrBN exhibited higher hardness, wear- and corrosion-resistance than pure CrN. • The best wear- and corrosion-resistant film was deposited with 600 W RF power.

  16. Development of vapor deposited thin films for bio-microsystems

    Science.gov (United States)

    Popat, Ketul Chandrakant

    Increasing demands for more biocompatible and sophisticated bio-microsystems in recent years has led to the development of a new technology called BioMEMS (biological micro-electro-mechanical systems). The foundation of this technology is the same as that of the traditional field of IC (integrated circuits), but an emphasis on developing new diagnostic and therapeutic modalities. Micro- and nano-fabrication techniques are currently being used to develop implants that can record, sense, stimulate and deliver to biological systems. Micromachined substrates can provide unique advantages over traditional implantable devices in terms of their ability to control surface micro-architecture, topography and feature size in micron and nano sizes. However, as BioMEMS technology is rapidly being developed, the practical use of these bio-microsystems is limited due to the inability to effectively interface with the biological system in non-immunogenic and stable manner. This is one of the most important considerations, and hence it is useful to focus on the fundamental scientific issues relating to material science, surface chemistry and immunology of silicon based bio-microsystems. This results in development of biomolecular interfaces that are compatible with both microfabrication processing and biological systems. The overall thrust of this research is to develop, characterize and integrate vapor deposited thin films with bio-microsystems in a manner that it is both reproducible and fully integrated with existing technologies. The main strategy is to use silane coatings precursor coatings on which poly (ethylene glycol) (PEG) will be coated in vapor phase. Silane has been coated user vapor phase, but its chemical and biological characterization and stability of the films under physiological conditions has not been investigated for biological applications. PEG has been coated in solution phase on silicon surface. However, it has not been coated under vapor phase. Here we are

  17. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  18. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    Science.gov (United States)

    Al-shurman, Khaled

    Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors. The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an urgent need for a new platform material to replace Si. Graphene is considered a promising material with enormous potential applications in many electronic and optoelectronics devices due to its superior properties. There are several techniques to produce graphene films. Among these techniques, chemical vapor deposition (CVD) offers a very convenient method to fabricate films for large-scale graphene films. Though CVD method is suitable for large area growth of graphene, the need for transferring a graphene film to silicon-based substrates is required. Furthermore, the graphene films thus achieved are, in fact, not single crystalline. Also, graphene fabrication utilizing Cu and Ni at high growth temperature contaminates the substrate that holds Si CMOS circuitry and CVD chamber as well. So, lowering the deposition temperature is another technological milestone for the successful adoption of graphene in integrated circuits fabrication. In this research, direct large-scale graphene film fabrication on silicon based platform (i.e. SiO2 and Si3N4) at low temperature was achieved. With a focus on low-temperature graphene growth, hot-filament chemical vapor deposition (HF-CVD) was utilized to synthesize graphene film using 200 nm thick nickel film. Raman spectroscopy was utilized to examine graphene formation on the bottom side of the Ni film

  19. Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Como, N. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Martinez-Landeros, V. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Mejia, I. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States); Aguirre-Tostado, F.S. [Centro de Investigación en Materiales Avanzados, Monterrey, Nuevo Leon, 66600, México (Mexico); Nascimento, C.D.; Azevedo, G. de M; Krug, C. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Porto Alegre, 91509-900 (Brazil); Quevedo-Lopez, M.A., E-mail: mquevedo@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080 (United States)

    2014-01-01

    The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10{sup −1} to 10{sup 4} Ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 10{sup 19} to 10{sup 13} cm{sup −3} and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm{sup 2}/V-s for the same pressure regime. Although the energy bandgap remains unaffected (∼ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition. - Highlights: • CdS thin films deposited by pulsed laser deposition at room temperature. • The optical, electrical and structural properties were evaluated. • Carrier concentration ranged from 10{sup 19} to 10{sup 13} cm{sup −3}. • The chemical composition was studied by Rutherford back scattering. • The density of sulfur vacancies and cadmium interstitial was varied.

  20. Use of surface plasmon resonance to investigate lateral wall deposition kinetics and properties of polydopamine films.

    Science.gov (United States)

    Li, Hui; Cui, Dafu; Cai, Haoyuan; Zhang, Lulu; Chen, Xing; Sun, Jianhai; Chao, Yapeng

    2013-03-15

    Dopamine (DA) is a particularly important neurotransmitter. Polydopamine (pDA) films have been demonstrated to be important materials for the immobilization of biomolecules onto almost any type of solid substrate. In this study, a surface plasmon resonance (SPR)-based sensor system with the sensor chip surface parallel to the direction of gravity was used to investigate the lateral wall deposition kinetics and properties of pDA films. The deposition kinetics of pDA Films are limited by the oxidation process. The pDA film could not be removed from the sensor chip completely by a strongly alkaline solution, indicating that the pDA film was heterogeneous in the direction of deposition. The pDA film formed near the interior of the solution was less stable than the film formed near the gold-solution interface. Adsorption of proteins on pDA film was studied compared with that on bare gold and dextran sensor chip. The reduction of Au(111) cations by the pDA film, forming a layer of gold particles, was monitored using SPR.

  1. Parylene film for sidewall passivation in SCREAM process

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Trench sidewall passivation is a key step in the SCREAM (single crystal reactive etching and metallization) process for releasing suspended MEMS structures. In this paper, the parylene thin film is reported to serve as the passivation layer owing to its excellent conformality, chemical inertness, mechanical performance, and especially, low growth temperature. The deposited parylene films are characterized and the test structures are released through SCREAM process utilizing the parylene films as a passivation layer. The results show that as a passivation layer the parylene has more merits than the PECVD SiO2 film.

  2. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    Science.gov (United States)

    An, Hongyu; Wang, Jian; Szivos, Janos; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Safran, Gyorgy; Nakamura, Yoshio; Shi, Ji

    2015-11-01

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N2 into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L10 ordering transformation of CoPt.

  3. Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

    Energy Technology Data Exchange (ETDEWEB)

    An, Hongyu; Harumoto, Takashi; Sannomiya, Takumi; Muraishi, Shinji; Nakamura, Yoshio; Shi, Ji, E-mail: Shi.j.aa@m.titech.ac.jp [Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan); Wang, Jian [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Szivos, Janos; Safran, Gyorgy [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly-Thege ut 29-33 (Hungary)

    2015-11-28

    The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N{sub 2} into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L1{sub 0} ordering transformation of CoPt.

  4. Deposition of TiN Films by Novel Filter Cathodic Arc Technique

    Institute of Scientific and Technical Information of China (English)

    NIU Er-Wu; FAN Song-Hua; LI Li; L(U) Guo-Hua; FENG Wen-Ran; ZHANG Gu-Ling; YANG Si-Ze

    2006-01-01

    A straight magnetic filtering arc source is used to deposit thin films of titanium nitride.The properties of thefilms depend strongly on the deposition process.TiN films can be deposited directly onto heated substrates in anitrogen atmosphere or onto unbiased substrates by condensing the Ti+ ion beam in about 300 eV N2+ nitrogen ionbombardment.In the latter case.the film stoichiometry is varied from an N:Ti ratio of 0.6-1.1 by controlling thearrival rates of Ti and nitrogen ions.Meanwhile,simple models are used to describe the evolution of compressivestress as function of the arrival ratio and the composition of the ion-assisted TiN films.

  5. Nanoscale precipitation coating: the deposition of inorganic films through step-by-step spray-assembly.

    Science.gov (United States)

    Popa, Gabriela; Boulmedais, Fouzia; Zhao, Peng; Hemmerlé, Joseph; Vidal, Loïc; Mathieu, Eric; Félix, Olivier; Schaaf, Pierre; Decher, Gero; Voegel, Jean-Claude

    2010-08-24

    Thin films and surface coatings play an important role in basic and applied research. Here we report on a new, versatile, and simple method ("precipitation coating") for the preparation of inorganic films, based on the alternate spraying of complementary inorganic salt solutions against a receiving surface on which the inorganic deposit forms. The method applies whenever the solubility of the deposited material is smaller than that of the salts in the solutions of the reactants. The film thickness is controlled from nanometers to hundreds of micrometers simply by varying the number of spraying steps; 200 spray cycles, corresponding to less than 15 min deposition time, yield films with thicknesses exceeding one micrometer and reaching tens of micrometers in some cases. The new solution-based process is also compatible with conventional layer-by-layer assembly and permits the fabrication of multimaterial sandwich-like coatings.

  6. CdS/FTO thin film electrodes deposited by chemical bath deposition and by electrochemical deposition: A comparative assessment of photo-electrochemical characteristics

    Science.gov (United States)

    Zyoud, Ahed; Saa'deddin, Iyad; Khudruj, Sahar; Hawash, Zafer M.; Park, DaeHoon; Campet, Guy; Hilal, Hikmat S.

    2013-04-01

    CdS thin films have been deposited onto FTO/glass substrates by two different techniques, electrochemical deposition (ECD) and chemical bath deposition (CBD). Feasibility of using these two film types in photoelectrochemical processes has been critically investigated here. The films were comparatively characterized by a number of techniques (solid state absorption spectra, solid state photoluminescence spectra, XRD and SEM). PEC characteristics of the electrodes, including current density-voltage (J-V) plots, conversion efficiency (η), stability and fill-factor (FF) were then studied. The results show that both systems involved nano-sized CdS particles living in coagulates. The ECD was thinner and more uniform than the CBD system. The CBD films were more effective in PEC processes than the ECD counterparts. Effect of annealing on characteristics of both electrode systems has been investigated. Annealing enhanced both film characteristics, but the CBD was affected to a higher extent, and the annealed CBD film was more effective than the ECD counterpart.

  7. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  8. Atmospheric Plasma Deposition of SiO2 Films for Adhesion Promoting Layers on Titanium

    Directory of Open Access Journals (Sweden)

    Liliana Kotte

    2014-12-01

    Full Text Available This paper evaluates the deposition of silica layers at atmospheric pressure as a pretreatment for the structural bonding of titanium (Ti6Al4V, Ti15V3Cr3Sn3Al in comparison to an anodizing process (NaTESi process. The SiO2 film was deposited using the LARGE plasma source, a linearly extended DC arc plasma source and applying hexamethyldisiloxane (HMDSO as a precursor. The morphology of the surface was analyzed by means of SEM, while the characterization of the chemical composition of deposited plasma layers was done by XPS and FTIR. The long-term durability of bonded samples was evaluated by means of a wedge test in hot/wet condition. The almost stoichiometric SiO2 film features a good long-term stability and a high bonding strength compared to the films produced with the wet-chemical NaTESi process.

  9. Growth of tantalum pentoxide film by pulsed laser deposition

    Science.gov (United States)

    Zhang, Jun-Ying; Fang, Qi; Boyd, Ian W.

    1999-01-01

    Thin films of Ta 2O 5 have been deposited on quartz and silicon substrates by 532-nm (Nd:YAG) pulsed laser deposition (PLD) in various O 2 gas environments. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and annealing under UV irradiation using a 172-nm excimer lamp, on the properties of the grown films, has been studied. The refractive index of the films increases with increasing pressure of O 2. X-ray diffraction measurements show that the as-deposited films are amorphous at temperatures below 500°C and possess orthorhombic (β-Ta 2O 5) crystal structure at temperatures above 600°C. The optical properties determined by UV spectrophotometry also strongly depend on the deposition parameters. At O 2 pressures above 0.15 mbar, the refractive index of the films was about 2.12 which is close to the bulk Ta 2O 5 value of 2.2. Optical transmittance around 85% in the visible region of the spectrum was obtained at an oxygen pressure of 0.2 mbar.

  10. Pulsed laser deposition of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Farha, Ashraf Hassan, E-mail: ahass006@odu.edu; Elsayed-Ali, Hani E., E-mail: helsayed@odu.edu [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Applied Research Center, Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Department of Physics, Faculty of Science, Ain Shams University, Cairo 11566 (Egypt); Ufuktepe, Yüksel, E-mail: ufuk@cu.edu.tr [Department of Physics, University of Cukurova, 01330 Adana (Turkey); Myneni, Ganapati, E-mail: rao@jlab.org [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2015-12-04

    Niobium nitride (NbN{sub x}) films were grown on Nb and Si(100) substrates using pulsed laser deposition. NbN{sub x} films were deposited on Nb substrates using PLD with a Q-switched Nd:YAG laser (λ = 1064 nm, ∼40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, nitrogen background pressures and deposition substrate temperatures. When all the fabrication parameters are fixed, except for the laser fluence, the surface roughness, nitrogen content, and grain size increase with increasing laser fluence. Increasing nitrogen background pressure leads to a change in the phase structure of the NbN{sub x} films from mixed β-Nb{sub 2}N and cubic δ-NbN phases to single hexagonal β-Nb{sub 2}N. The substrate temperature affects the preferred orientation of the crystal structure. The structural and electronic, properties of NbN{sub x} deposited on Si(100) were also investigated. The NbN{sub x} films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The observations establish guidelines for adjusting the deposition parameters to achieve the desired NbN{sub x} film morphology and phase.

  11. Effect of the initial structure on the electrical property of crystalline silicon films deposited on glass by hot-wire chemical vapor deposition.

    Science.gov (United States)

    Chung, Yung-Bin; Lee, Sang-Hoon; Bae, Sung-Hwan; Park, Hyung-Ki; Jung, Jae-Soo; Hwang, Nong-Moon

    2012-07-01

    Crystalline silicon films on an inexpensive glass substrate are currently prepared by depositing an amorphous silicon film and then crystallizing it by excimer laser annealing, rapid thermal annealing, or metal-induced crystallization because crystalline silicon films cannot be directly deposited on glass at a low temperature. It was recently shown that by adding HCI gas in the hot-wire chemical vapor deposition (HWCVD) process, the crystalline silicon film can be directly deposited on a glass substrate without additional annealing. The electrical properties of silicon films prepared using a gas mixture of SiH4 and HCl in the HWCVD process could be further improved by controlling the initial structure, which was achieved by adjusting the delay time in deposition. The size of the silicon particles in the initial structure increased with increasing delay time, which increased the mobility and decreased the resistivity of the deposited films. The 0 and 5 min delay times produced the silicon particle sizes of approximately 10 and approximately 28 nm, respectively, in the initial microstructure, which produced the final films, after deposition for 300 sec, of resistivities of 0.32 and 0.13 Omega-cm, mobilities of 1.06 and 1.48 cm2 V(-1) S(-1), and relative densities of 0.87 and 0.92, respectively.

  12. Amorphous carbon film deposition on inner surface of tubes using atmospheric pressure pulsed filamentary plasma source

    CERN Document Server

    Pothiraja, Ramasamy; Awakowicz, Peter

    2011-01-01

    Uniform amorphous carbon film is deposited on the inner surface of quartz tube having the inner diameter of 6 mm and the outer diameter of 8 mm. A pulsed filamentary plasma source is used for the deposition. Long plasma filaments (~ 140 mm) as a positive discharge are generated inside the tube in argon with methane admixture. FTIR-ATR, XRD, SEM, LSM and XPS analyses give the conclusion that deposited film is amorphous composed of non-hydrogenated sp2 carbon and hydrogenated sp3 carbon. Plasma is characterized using optical emission spectroscopy, voltage-current measurement, microphotography and numerical simulation. On the basis of observed plasma parameters, the kinetics of the film deposition process is discussed.

  13. Note: Large area deposition of Rh single and Rh/W/Cu multilayer thin films on stainless steel substrate by pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mostako, A. T. T.; Khare, Alika, E-mail: alika@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

    2014-04-15

    Mirror like thin films of single layer Rh and multilayer Rh/W/Cu are deposited on highly polished 50 mm diameter stainless steel substrate by Pulsed Laser Deposition (PLD) technique for first mirror application in fusion reactors. For this, the conventional PLD technique has been modified by incorporating substrate rastering stage for large area deposition via PLD. Process optimization to achieve uniformity of deposition as estimated from fringe visibility and thickness is also discussed.

  14. Epitaxial yttrium iron garnet films grown by pulsed laser deposition

    Science.gov (United States)

    Dorsey, P. C.; Bushnell, S. E.; Seed, R. G.; Vittoria, C.

    1993-07-01

    Epitaxial Y3Fe5O12 (YIG) films have been grown by the pulsed laser deposition (PLD) technique on (111) gadolinium gallium garnet substrates. The effect of substrate temperature and oxygen partial pressure on the structure, composition, and magnetic properties of the films was investigated and compared to liquid phase epitaxy YIG films. The results demonstrated that epitaxial YIG films could be prepared under a wide range of deposition conditions, but narrow linewidth (ΔH≂1 Oe) films were producible only at low oxygen partial pressures (O2temperatures (Ts≳800 °C). Since the linewidth of single-crystal YIG is dominated by surface and volume defects and/or impurities, the narrow linewidth indicated that PLD is a viable technique for producing high-quality ferrite films for microwave device applications. In addition, under all deposition conditions (50-1000 mTorr and 700-850 °C) there is a uniaxial axis perpendicular to the film plane. However, at low oxygen pressure the uniaxial anisotropy energy constant Ku is negative while at high oxygen pressure Ku is positive.

  15. CdS films deposited by chemical bath under rotation

    Energy Technology Data Exchange (ETDEWEB)

    Oliva-Aviles, A.I., E-mail: aoliva@mda.cinvestav.mx [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico); Patino, R.; Oliva, A.I. [Centro de Investigacion y de Estudios Avanzados Unidad Merida, Departamento de Fisica Aplicada. A.P. 73-Cordemex, 97310 Merida, Yucatan (Mexico)

    2010-08-01

    Cadmium sulfide (CdS) films were deposited on rotating substrates by the chemical bath technique. The effects of the rotation speed on the morphological, optical, and structural properties of the films were discussed. A rotating substrate-holder was fabricated such that substrates can be taken out from the bath during the deposition. CdS films were deposited at different deposition times (10, 20, 30, 40 and 50 min) onto Corning glass substrates at different rotation velocities (150, 300, 450, and 600 rpm) during chemical deposition. The chemical bath was composed by CdCl{sub 2}, KOH, NH{sub 4}NO{sub 3} and CS(NH{sub 2}){sub 2} as chemical reagents and heated at 75 deg. C. The results show no critical effects on the band gap energy and the surface roughness of the CdS films when the rotation speed changes. However, a linear increase on the deposition rate with the rotation energy was observed, meanwhile the stoichiometry was strongly affected by the rotation speed, resulting a better 1:1 Cd/S ratio as speed increases. Rotation effects may be of interest in industrial production of CdTe/CdS solar cells.

  16. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  17. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation.

    Science.gov (United States)

    Alvarado, Jose Alberto; Maldonado, Arturo; Juarez, Héctor; Pacio, Mauricio; Perez, Rene

    2015-01-01

    This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  18. Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iwashita, Shinya, E-mail: shinya.iwashita@tel.com; Aoyama, Shintaro; Nasu, Masayuki; Shimomura, Kouji; Noro, Naotaka; Hasegawa, Toshio; Akasaka, Yasushi [SPE Core Technology Development Department, Tokyo Electron Yamanashi Ltd., 50 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan); Miyashita, Kohei [Leading Edge Process Development Center, Tokyo Electron Ltd., 650 Mitsuzawa, Hosaka-cho, 407-0192 Nirasaki (Japan)

    2016-01-15

    This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient method to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.

  19. Control of crystallite size in diamond film chemical vapor deposition

    Science.gov (United States)

    Moran, Mark B.; Johnson, Linda F.; Klemm, Karl A.

    1992-12-01

    In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.

  20. Characterization of CdTe Films Deposited at Various Bath Temperatures and Concentrations Using Electrophoretic Deposition

    OpenAIRE

    Zulkarnain Zainal; Mohd Norizam Md Daud; Azmi Zakaria; Mohd Sabri Mohd Ghazali; Atefeh Jafari; Wan Rafizah Wan Abdullah

    2012-01-01

    CdTe film was deposited using the electrophoretic deposition technique onto an ITO glass at various bath temperatures. Four batch film compositions were used by mixing 1 to 4 wt% concentration of CdTe powder with 10 mL of a solution of methanol and toluene. X-ray Diffraction analysis showed that the films exhibited polycrystalline nature of zinc-blende structure with the (111) orientation as the most prominent peak. From the Atomic Force Microscopy, the thickness and surface roughness of the ...

  1. Deposition of Cadmium Sulphide Thin Films by Photochemical Deposition and Characterization

    Directory of Open Access Journals (Sweden)

    H.L. Pushpalatha

    2015-03-01

    Full Text Available Deposition of cadmium sulphide (CdS thin films on glass substrates in acidic medium by photochemical deposition (PCD and studies by several characterizations are presented. The structural characterization of the thin films was carried out by XRD. The elemental composition of the thin films was carried out by EDAX. The optical properties have been studied in the wavelength range 200-900 nm and the optical transition has been found to be direct and allowed. The morphological properties are studied by AFM and electrical properties are studied by four probe technique.

  2. Dopamine-melanin film deposition depends on the used oxidant and buffer solution.

    Science.gov (United States)

    Bernsmann, Falk; Ball, Vincent; Addiego, Frédéric; Ponche, Arnaud; Michel, Marc; Gracio, José Joaquin de Almeida; Toniazzo, Valérie; Ruch, David

    2011-03-15

    The deposition of "polydopamine" films, from an aqueous solution containing dopamine or other catecholamines, constitutes a new and versatile way to functionalize solid-liquid interfaces. Indeed such films can be deposited on almost all kinds of materials. Their deposition kinetics does not depend markedly on the surface chemistry of the substrate, and the films can reach thickness of a few tens of nanometers in a single reaction step. Up to now, even if a lot is known about the oxidation mechanism of dopamine in solution, only little information is available to describe the deposition mechanism on surfaces either by oxidation in solution or by electrodeposition. The deposition kinetics of melanin was only investigated from dopamine solutions using oxygen or ammonium persulfate as an oxidant and from a tris(hydroxymethyl) aminomethane (Tris) containing buffer solutions at pH 8.5. Many other oxidants could be used, and the buffer agent containing a primary amine group may influence the deposition process. Herein we show that the deposition kinetics of melanin from dopamine containing buffers at pH 8.5 can be markedly modified using Cu(2+) instead of O2 as an oxidant: the deposition kinetics remains linear up to thicknesses of more than 70 nm, whereas the film growth stops at 45 ± 5 nm in the presence of 02. In addition, the films prepared from Cu(2+) containing solutions display an absorption spectrum with defined peaks at 320 and 370 nm, which are absent in the spectra of films prepared in oxygenated solutions. The replacement of Tris buffer by phosphate buffer also has a marked effect on the melanin deposition kinetics.

  3. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sammelselg, Väino, E-mail: vaino.sammelselg@ut.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu (Estonia); Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-09-02

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H{sub 2}SO{sub 4} was studied. • Smallest etching rates of < 5 pm/s for TiO{sub 2}, Al{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3} were reached. • Highest etching rate of 2.8 nm/s for Al{sub 2}O{sub 3} was occurred. • Remarkable differences in etching of non- and crystalline films were observed.

  4. Effects of laser fluence on the structural properties of pulsed laser deposited ruthenium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Wai-Keat; Wong, Hin-Yong; Chan, Kah-Yoong; Tou, Teck-Yong [Multimedia University, Centre for Advanced Devices and Systems (CADS), Faculty of Engineering, Cyberjaya, Selangor (Malaysia); Yong, Thian-Khok [Universiti Tunku Abdul Rahman, Faculty of Engineering and Science, Setapak, Kuala Lumpur (Malaysia); Yap, Seong-Shan [Norwegian University of Science and Technology, Institute of Physics, Trondheim (Norway)

    2010-08-15

    Ruthenium (Ru) has received great interest in recent years for applications in microelectronics. Pulsed laser deposition (PLD) enables the growth of Ru thin films at low temperatures. In this paper, we report for the first time the characterization of pulsed laser deposited Ru thin films. The deposition processes were carried out at room temperature in vacuum environment for different durations with a pulsed Nd:YAG laser of 355-nm laser wavelength, employing various laser fluences ranging from 2 J/cm{sup 2} to 8 J/cm{sup 2}. The effect of the laser fluence on the structural properties of the deposited Ru films was investigated using surface profilometry, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Ru droplets, some spherical in shape and some flattened into round discs were found on the deposited Ru. The droplets were correlated to ripple formations on the target during the laser-induced ejection from the target. In addition, crystalline Ru with orientations of (100), (101), and (002) was observed in the XRD spectra and their intensities were found to increase with increasing laser fluence and film thickness. Grain sizes ranging from 20 nm to 35 nm were deduced using the Scherrer formula. Optical emission spectroscopy (OES) and energy-dispersive X-ray spectroscopy (EDS) show that the composition of the plume and the deposited Ru film was of high purity. (orig.)

  5. Self-limiting atomic layer deposition of conformal nanostructured silver films

    Science.gov (United States)

    Golrokhi, Zahra; Chalker, Sophia; Sutcliffe, Christopher J.; Potter, Richard J.

    2016-02-01

    The controlled deposition of ultra-thin conformal silver nanoparticle films is of interest for applications including anti-microbial surfaces, plasmonics, catalysts and sensors. While numerous techniques can produce silver nanoparticles, few are able to produce highly conformal coatings on high aspect ratio surfaces, together with sub-nanometre control and scalability. Here we develop a self-limiting atomic layer deposition (ALD) process for the deposition of conformal metallic silver nanoparticle films. The films have been deposited using direct liquid injection ALD with ((hexafluoroacetylacetonato)silver(I)(1,5-cyclooctadiene)) and propan-1-ol. An ALD temperature window between 123 and 128 °C is identified and within this range self-limiting growth is confirmed with a mass deposition rate of ∼17.5 ng/cm2/cycle. The effects of temperature, precursor dose, co-reactant dose and cycle number on the deposition rate and on the properties of the films have been systematically investigated. Under self-limiting conditions, films are metallic silver with a nano-textured surface topography and nanoparticle size is dependent on the number of ALD cycles. The ALD reaction mechanisms have been elucidated using in-situ quartz crystal microbalance (QCM) measurements, showing chemisorption of the silver precursor, followed by heterogeneous catalytic dehydrogenation of the alcohol to form metallic silver and an aldehyde.

  6. Chemical bath deposition of CdS thin films doped with Zn and Cu

    Indian Academy of Sciences (India)

    A I Oliva; J E Corona; R Patiño; A I Oliva-Avilés

    2014-04-01

    Zn- and Cu-doped CdS thin films were deposited onto glass substrates by the chemical bath technique. ZnCl2 and CuCl2 were incorporated as dopant agents into the conventional CdS chemical bath in order to promote the CdS doping process. The effect of the deposition time and the doping concentration on the physical properties of CdS films were investigated. The morphology, thickness, bandgap energy, crystalline structure and elemental composition of Zn- and Cu-doped CdS films were investigated and compared to the undoped CdS films properties. Both Zn- and Cu-doped CdS films presented a cubic crystalline structure with (1 1 1) as the preferential orientation. Lower values of the bandgap energy were observed for the doped CdS films as compared to those of the undoped CdS films. Zn-doped CdS films presented higher thickness and roughness values than those of Cu-doped CdS films. From the photoluminescence results, it is suggested that the inclusion of Zn and Cu into CdS crystalline structure promotes the formation of acceptor levels above the CdS valence band, resulting in lower bandgap energy values for the doped CdS films.

  7. Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects

    Institute of Scientific and Technical Information of China (English)

    Zhao Bin; Zhao Ming-Tao; Zhang Yan-Fei; Yang Jun-He

    2013-01-01

    The deposition of a Cu seed layer film is investigated by supercritical fluid deposition (SCFD) using H2 as a reducing agent for Bis(2,2,6,6-tetramethyl-3,5-heptanedionato) copper in supercritical CO2 (scCO2).The effects of deposition temperature,precursor,and H2 concentration are investigated to optimize Cu deposition.Continuous metallic Cu films are deposited on Ru substrates at 190 ℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2.A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films.For a H2concentration above 0.56 mol/L,the root-mean-square (RMS) roughness of a Cu film decreases as the H2 concentration increases.Finally,a 20-nm thick Cu film with a smooth surface,which is required as a seed layer in advanced interconnects,is successfully deposited at a high H2 concentration (0.75 mol/L).

  8. Plasma deposited fluorinated films on porous membranes

    Energy Technology Data Exchange (ETDEWEB)

    Gancarz, Irena [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Bryjak, Marek, E-mail: marek.bryjak@pwr.edu.pl [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawski, Jan; Wolska, Joanna [Department of Polymer and Carbon Materials, Wrocław University of Technology, 50-370 Wrocław (Poland); Kujawa, Joanna; Kujawski, Wojciech [Nicolaus Copernicus University, Faculty of Chemistry, 7 Gagarina St., 87-100 Torun (Poland)

    2015-02-01

    75 KHz plasma was used to modify track etched poly(ethylene terephthalate) membranes and deposit on them flouropolymers. Two fluorine bearing monomers were used: perflourohexane and hexafluorobenzene. The modified surfaces were analyzed by means of attenuated total reflection infra-red spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and wettability. It was detected that hexaflourobenxene deposited to the larger extent than perflourohaxane did. The roughness of surfaces decreased when more fluoropolymer was deposited. The hydrophobic character of surface slightly disappeared during 20-days storage of hexaflourobenzene modified membrane. Perfluorohexane modified membrane did not change its character within 120 days after modification. It was expected that this phenomenon resulted from post-reactions of oxygen with radicals in polymer deposits. The obtained membranes could be used for membrane distillation of juices. - Highlights: • Plasma deposited hydrophobic layer of flouropolymers. • Deposition degree affects the surface properties. • Hydrohilization of surface due to reaction of oxygen with entrapped radicals. • Possibility to use modified porous membrane for water distillation and apple juice concentration.

  9. Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures

    NARCIS (Netherlands)

    A.D. Verkerk; M.M. de Jong; J.K. Rath; M. Brinza; R.E.I. Schropp; W.J. Goedheer; V.V. Krzhizhanovskaya; Y.E. Gorbachev; K.E. Orlov; E.M. Khilkevitch; A.S. Smirnov

    2008-01-01

    In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by l

  10. Shallow bath chemical deposition of CdS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lo, Y.S. [Department of Molecule Science and Engineering, National Taipei University of Science and Technology, Taipei, 10617, Taiwan (China); Choubey, R.K. [Department of Applied Physics, Birla Institute of Technology, Mesra, Ranchi, 835 215 (India); Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China); Yu, W.C. [Department of Molecule Science and Engineering, National Taipei University of Science and Technology, Taipei, 10617, Taiwan (China); Hsu, W.T. [Green Energy and Environmental Research Laboratory, Industrial Technology Research Institute, Hsin-Chu, Taiwan (China); Lan, C.W., E-mail: cwlan@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)

    2011-10-31

    Cadmium sulfide thin film was grown by shallow chemical bath deposition technique. This technique used a highly conducted hot plate to heat the substrate, while using a shallow bath for higher thermal gradients. As a result, large area uniformity could be achieved and the homogeneous nucleation was suppressed. More importantly, the solution used was greatly reduced, which is crucial for cost reduction in practice. The effects of temperature and shaking on the growth kinetics and film properties were investigated. The reaction activation energy was obtained to be 0.84 eV, and was not affected much by shaking indicating that the deposition is essentially reaction controlled. Furthermore, the films deposited at low or high temperature conditions had better photoconductivity.

  11. Plasma enhanced chemical vapor deposition of ZrO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, K.

    1993-12-09

    Amorphous ZrO{sub 2} thin films were deposited in an inductively coupled PECVD system using a Zr {beta}-diketonate, Zr(C{sub 11}H{sub 19}O{sub 2}){sub 4}, as the precursor. The deposits were air annealed at 900C for 5 min to get pure, single phase, oriented, polycrystalline {alpha}-ZrO{sub 2}. Feasibility of using 2 different types of reactors was investigated. The inductively heated horizontal reactor depositions at 600C had a lower deposition rate and the films were non-uniform in thickness with a columnar structure. The resistively heated vertical reactor depositions at 350C had a higher deposition rate and the films were more uniform in thickness with a fine grained microstructure. The statistical design was demonstrated as an effective technique to analyze the effect of process conditions on the rate of deposition and relative (h00) orientation. The factorial design was used to quantify the two responses in terms of the process variables and their mutual interactions. The statistical design for rate of deposition was found to correlate with the trends observed in classical design.

  12. Cobalt Xanthate Thin Film with Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    İ. A. Kariper

    2013-01-01

    Full Text Available Cobalt xanthate thin films (CXTFs were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate. The structure of the films was analyzed by far-infrared spectrum (FIR, mid-infrared (MIR spectrum, nuclear magnetic resonance (NMR, and scanning electron microscopy (SEM. These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM. The transmittance was about 70–80% (4 hours, 50°C. The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10 Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

  13. Characterization of Thin Films Deposited with Precursor Ferrocene by Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YAO Kailun; ZHENG Jianwan; LIU Zuli; JIA Lihui

    2007-01-01

    In this paper,the characterization of thin films,deposited with the precursor ferrocene(FcH)by the plasma enhanced chemical vapour deposition(PECVD)technique,was investigated.The films were measured by Scanning Electronic Microscopy(SEM),Atomic Force Microscopy(AFM),Electron Spectroscopy for Chemical Analysis(ESCA),and superconducting Quantum Interference Device(SQUID).It was observed that the film's layer is homogeneous in thickness and has a dense morphology without cracks.The surface roughness is about 36 nm.From the results of ESCA,it can be inferred that the film mainly contains the compound FeOOH,and carbon is combined with oxygen in different forms under different supply-powers.The hysteresis loops indicate that the film is of soft magnetism.

  14. Pulsed-laser deposition of vicinal and c-axis oriented high temperature superconducting thin films

    CERN Document Server

    Rössler, R

    2000-01-01

    respect to the temperature, oxygen pressure and laser fluence. (Re,Hg)Ba sub 2 Ca sub ( n-1)Cu sub n O sub x films are synthesized on (001) and vicinal SrTiO sub 3 substrates in a two step process employing pulsed-laser deposition of Hg-free precursor films and Hg-vapour annealing in a sealed quartz tube. The sealed quartz tube technique is described in detail and the thermodynamics and the phase formation are discussed. The influence of the Hg-vapour pressure and the annealing temperature on the film properties are investigated. The influence of Hg-vapour annealing on Bi sub 2 Sr sub 2 CaCu sub 2 O sub x films is described. YBa sub 2 Cu sub 3 O sub x films with thicknesses 20 to 480 nm are deposited on vicinal SrTiO sub 3 substrates (10 degrees tilt angle). Variation of the resistivities and changes in the film morphology depending on film thickness are described. The influence of post-annealing treatments on the film properties is discussed. Pulsed-laser deposition (PLD) of high temperature superconducting ...

  15. Biocidal Silver and Silver/Titania Composite Films Grown by Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    D. W. Sheel

    2008-01-01

    Full Text Available This paper describes the growth and testing of highly active biocidal films based on photocatalytically active films of TiO2, grown by thermal CVD, functionally and structurally modified by deposition of nanostructured silver via a novel flame assisted combination CVD process. The resulting composite films are shown to be highly durable, highly photocatalytically active and are also shown to possess strong antibacterial behaviour. The deposition control, arising from the described approach, offers the potential to control the film nanostructure, which is proposed to be crucial in determining the photo and bioactivity of the combined film structure, and the transparency of the composite films. Furthermore, we show that the resultant films are active to a range of organisms, including Gram-negative and Gram-positive bacteria, and viruses. The very high-biocidal activity is above that expected from the concentrations of silver present, and this is discussed in terms of nanostructure of the titania/silver surface. These properties are especially significant when combined with the well-known durability of CVD deposited thin films, offering new opportunities for enhanced application in areas where biocidal surface functionality is sought.

  16. Growth of thick MgB{sub 2} films by impinging-jet hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lamborn, D.R. [Department of Chemical Engineering, The Pennsylvania State University, University Park, PA 16802 (United States); Wilke, R.H.T.; Li, Q. [Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Xi, X. [Department of Physics, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States); Snyder, D.W. [Applied Research Laboratory, The Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States)

    2008-01-18

    Thick MgB{sub 2} films are grown using a novel impinging-jet hybrid physical-chemical vapor deposition process. An increased amount of the boron source gas generates high growth rates. Superconducting properties of the thick films are comparable to previous results from other processes, which indicate that this is a promising new process for MgB{sub 2} deposition for coated conductor applications, such as wires and tapes for MRI magnets. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  17. Open air plasma deposited antimicrobial SiOx/TiOx composite films for biomedical applications

    Directory of Open Access Journals (Sweden)

    Rapp Christin

    2016-09-01

    Full Text Available Open air atmospheric pressure plasma jet (APPJ enhanced chemical vapour deposition process was used to deposit biocompatible SiOx/TiOx composite coatings. The as deposited films are hydrophilic and show visible light induced photocatalytic effect, which is a consequence of the formation of defects in the TiOx structure due to the plasma process. This photocatalytic effect was verified by the demonstration of an antimicrobial effect under visible light on E. coli as well as by degradation of Rhodamine B. The films are non-cytotoxic as shown by the cytocompatibility tests. The films are conductive to cell growth and are stable in DMEM and isopropanol. The structural evaluation using SEM, EDS and XPS shows a dispersion of TiOx phase in a SiOxCyHz matrix. These analyses were used to correlate the structure-property relationship of the composite coating.

  18. Low-temperature deposition of transparent diamond films with a microwave cavity plasma reactor

    Science.gov (United States)

    Ulczynski, Michael J.

    1998-10-01

    Low-temperature diamond deposition with Microwave Cavity Plasma Reactor (MCPR) technology was investigated for application to temperature sensitive substrates. The substrate temperature during most CVD diamond deposition processes is typically greater then 600 C; however, there are some applications where temperature sensitive materials are used and the deposition temperature must be maintained below 550 C. These applications include materials like boro-silicate glass, which has a relatively low strain-point temperature, and integrated circuits that contain low melting point components. Experiments were conducted in three areas. The first area was MCPR development, the second was benchmark deposition and characterization of diamond films on silicon substrates and the third was deposition and characterization of diamond films on boro-silicate glass substrates. MCPR development included an investigation of various MCPR configurations that were designed and adapted for uniform, low-temperature diamond deposition over areas as large as 80-cm2. Reactors were investigated with end-feed microwave excitation and side-feed microwave excitation for maximum deposition area and uniformity. Various substrate receptor configurations were also investigated including a substrate heater and cooler. From these investigations, deposition parameters such as substrate temperature, deposition rate, deposition area and deposition uniformity were characterized. The benchmark silicon diamond deposition experiments were conducted for comparison to previous high temperature, >550 C, MCPR research and growth models. Here deposition results such as deposition rate and film quality were compared with applications of diamond growth models by Harris-Goodwin and Bachmann. Additionally, characterization experiments were conducted to investigate film attributes that are critical to optical applications, such as film surface roughness and deposition uniformity. Included as variables in these

  19. Spray pyrolysis deposition of indium sulphide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Otto, K.; Katerski, A.; Mere, A.; Volobujeva, O.; Krunks, M., E-mail: malle@staff.ttu.e

    2011-03-01

    In{sub 2}S{sub 3} thin films were grown by the chemical spray pyrolysis (CSP) method using the pneumatic spray set-up and compressed air as a carrier gas. Aqueous solutions containing InCl{sub 3} and SC(NH{sub 2}){sub 2} at a molar ratio of In/S = 1/3 and 1/6 were deposited onto preheated glass sheets at substrate temperatures T{sub s} = 205-410 {sup o}C. The obtained films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM,) optical transmission spectra, X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDS). According to XRD, thin films deposited at T{sub s} = 205-365 {sup o}C were composed of the (0 0 12) orientated tetragonal {beta}-In{sub 2}S{sub 3} phase independent of the In/S ratio in the spray solution. Depositions performed at T{sub s} = 410 {sup o}C led to the formation of the In{sub 2}O{sub 3} phase, preferably when the 1/3 solution was sprayed. Post-deposition annealing in air indicated that oxidation of the sulphide phase has a minor role in the formation of In{sub 2}O{sub 3} at temperatures up to 450 {sup o}C. In{sub 2}S{sub 3} films grown at T{sub s} below 365 {sup o}C exhibited transparency over 70% in the visible spectral region and E{sub g} of 2.90-2.96 eV for direct and 2.15-2.30 eV for indirect transitions, respectively. Film thickness and chlorine content decreased with increasing deposition temperatures. The XPS study revealed that the In/S ratio in the spray solution had a significant influence on the content of oxygen (Me-O, BE = 530.0 eV) in the In{sub 2}S{sub 3} films deposited in the temperature range of 205-365 {sup o}C. Both XPS and EDS studies confirmed that oxygen content in the films deposited using the solution with the In/S ratio of 1/6 was substantially lower than in the films deposited with the In/S ratio of 1/3.

  20. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Study of indium tin oxide thin films deposited on acrylics substrates by Ion beam assisted deposition technique

    OpenAIRE

    Meng Lijian; Liang Erjun; Gao Jinsong; Teixeira, Vasco M. P.; Santos, M. P. dos

    2009-01-01

    Indium tin oxide (ITO) thin films have been deposited onto acrylics (PMMA) substrates by ion beam assisted deposition technique at different oxygen flows. The structural, optical and electrical properties of the deposited films have been characterized by X-ray diffraction, transmittance, FTIR, ellipometry and Hall effect measurements. The optical constants of the deposited films have been calculated by fitting the ellipsometric spectra. The effects of the oxygen flow on the properties of the ...

  2. Structure and electrical properties of quaternary Cr–Si–Ni–W films prepared by ion beam sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.Y., E-mail: wxy@tju.edu.cn [School of Electronic Information Engineering, Tianjin University, Tianjin 300072 (China); Ma, J.X.; Li, C.G. [School of Electronic Information Engineering, Tianjin University, Tianjin 300072 (China); Shao, J.Q. [BDS Electronics Co., Ltd., Bengbu 233010 (China)

    2014-08-01

    Highlights: • Quaternary Cr–Si–Ni–W thin film was prepared by IBSD. • As-deposited Cr–Si–Ni–W films show nanocrystalline state in XRD analysis. • Big massive particles in Cr–Si–Ni–W films are mainly formed in deposition process. • Conduction mechanism was discussed based on microscopic analysis. - Abstract: Si-rich Cr–Si–Ni–W films were deposited by ion beam sputter deposition (IBSD) using a mother alloy target on polished Al{sub 2}O{sub 3} substrates. Effects of ion beam voltage, annealing temperature and deposition time on sheet resistance and TCR of Cr–Si–Ni–W films were studied. Experimental results reveal that the as-deposited Cr–Si–Ni–W films obtained by IBSD show a crystalline state because of a high mobility of deposition atoms and molecules with more energy obtained from high energy ions. XRD and AFM analysis show that the big massive particles mainly composed of Si and CrSi{sub 2} in Cr–Si–Ni–W films are formed in the process of IBSD rather than in post-annealing stage. Long deposition time is significantly important to a decrease of the number and size of gaps between big particles in Cr–Si–Ni–W films and to an improvement of the continuity and compactness of film structure, influencing resistivity and TCR of deposition film. The conduction mechanism was discussed based on microscopic analysis and the conductive model proposed for Cr–Si–Ni–W films mainly composed of big particles.

  3. The Effect of Deposition Time on Textured Magnesium Diboride Thick Films Fabricated by Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    W. G. Mutia

    2004-12-01

    Full Text Available MgB2 powders suspended in ethanol were electrophoretically deposited on high-purity molybdenum substrates having dimensions of 1 x 0.3 x 0.01 cm. The said substrate was set as the cathode and was placed 0.5 cm away from a graphite rod anode. A current density of ~0.02 mA/cm2 and a voltage of 600 V were applied. The effect of deposition time was studied by varying it as follows: 15 s, 30 s, 1 min, and 2 min. Heat treatment at 950 oC for 3 h was done after deposition. MgB2 thick films were successfully fabricated for the deposition carried out for 2 min. Deposition times less than 2 min resulted in insufficient deposited powder; hence formation of MgB2 was not facilitated. Films deposited at 15 and 30 s have good surface characteristics, wherein no microcracks were present. X-ray diffraction and surface image analysis reveal that the deposited films have a preferred orientation along the (10l direction.

  4. Plasma and Laser-Enhanced Deposition of Powders and Thin Films.

    Science.gov (United States)

    David, Moses

    The objective of this thesis has been the development of novel plasma and laser based techniques for the deposition and characterization of thin films and nano-scale powders. The different energy sources utilized for excitation and break -down of reactive species prior to deposition include an RF plasma discharge, an excimer laser and a CO _2 laser. Nanometer-scale (10-20 nm) powders and thin films of aluminum nitride (AlN) have been successfully deposited in a glow discharge by reacting trimethylaluminum and ammonia. Macroquantities (~800 mg/hr) of powder have been collected at the centers of two vortices around which the reactant gases swirl. Powders of AlN have large surface areas (85 m^2/g) and are free from oxygen contamination. Diamond-like-carbon (DLC) films have been deposited from ternary mixtures of butadiene, argon and hydrogen. DLC films have been etched in O _2 and CF_4/O _2 plasmas. The etching behavior was correlated with the deposition feed gas composition by combining the etch rate, bias voltage during deposition and the deposition rate into a new non-dimensional number. Two new processes for depositing copper films have been developed. The first technique involves the hydrogen plasma reduction of copper formate films and the second technique involves the reactive excimer laser ablation of copper formate. Particle forming plasmas have been characterized by measuring the light scattering intensity during the deposition of silicon nitride from silane/ammonia plasmas. Both spatial variations and transients during the plasma start -up and shut-off steps have been measured. The ultraviolet (vacuum ultraviolet and extreme ultraviolet) reflectance characteristics of AlN, DLC and SiC thin films has been measured. AlN and SiC films exhibit a relatively high (~20-40%) reflectance in the different regions of the ultraviolet spectrum. An improved algorithm has been developed for estimating thin film parameters such as thickness, refractive index, band-gap, and

  5. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  6. Alternating deposition films of a polymer and dendrimers bearing diphenylanthracene

    Institute of Scientific and Technical Information of China (English)

    SUN Jing; WANG Liyan; GAO Jian; YU Xi; WANG Zhiqiang

    2005-01-01

    Two generations of carboxyl-terminated poly (aryl ether) dendrimers bearing 9,10-diphenylanthracene cores are designed and synthesized. Alternating deposition of two dendrimers and poly(4-vinylpyridine) is studied with UV-Vis spectroscopy, FT-IR spectroscopy and atomic force microscopy. Experimental results indicate that this method to introduce chromophore into multilayer film can effectively prevent desorption of dye molecule. Moreover, it is found that dendrimer can inhibit the aggregation of fluorophore in film using fluorescence spectroscopy. Increase of dendrimer's generation can enhance fluorescence intensity of each fluorophore. This provides a new approach to design luminescent thin film.

  7. Impact toughness of tungsten films deposited on martensite stainless steel

    Institute of Scientific and Technical Information of China (English)

    HUANG Ning-kang; YANG Bin; WANG De-zhi

    2005-01-01

    Tungsten films were deposited on stainless steel Charpy specimens by magnetron sputtering followed by electron beam heat treatment. Charpy impact tests and scanning electron microscopy were used to investigate the ductile-brittle transition behavior of the specimens. With decreasing test temperature the fracture mode was transformed from ductile to brittle for both kinds of specimens with and without W films. The data of the crack initiation energy, crack propagation energy, impact absorbing energy, fracture time and deflection as well as the fracture morphologies at test temperature of -70 ℃ show that W films can improve the impact toughness of stainless steel.

  8. Oxide films: low-temperature deposition and crystallization

    Science.gov (United States)

    Park, Sangmoon; Herman, Gregory S.; Keszler, Douglas A.

    2003-10-01

    Thin films of CeO 2 and (Ce,Sm)O 2 have been prepared by using the SILAR method of deposition in conjunction with hydrothermal and high-temperature annealing. Low-temperature, low-pressure hydrothermal annealing of amorphous Mn:Zn 2GeO 4 films has lead to the growth of grains having edge lengths near 1 μm. Thick films of crystalline Zn 2SiO 4 exhibiting limited cracking have been prepared by a doctor-blade method also in conjunction with hydrothermal dehydration and annealing.

  9. Deposition of ZnO Films on Freestanding CVD Thick Diamond Films

    Institute of Scientific and Technical Information of China (English)

    SUN Jian; BAI Yi-Zhen; YANG Tian-Peng; XU Yi-Bin; WANG Xin-Sheng; DU Guo-Tong; WU Han-Hua

    2006-01-01

    @@ For ZnO/diamond structured surface acoustic wave (SAW) filters, performance is sensitively dependent on the quality of the ZnO films. In this paper, we prepare highly-oriented and fine grained polycrystalline ZnO thin films with excellent surface smoothness on the smooth nucleation surfaces of freestanding CVD diamond films by metal organic chemical vapour deposition (MOCVD). The properties of the ZnO films are characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectrum. The influences of the deposition conditions on the quality of ZnO films are discussed briefly. ZnO/freestanding thick-diamond-film layered SAW devices with high response frequencies are expected to be developed.

  10. Cadmium Sulfide Thin Films Deposited onto MWCNT/Polysulfone Substrates by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    M. Moreno

    2016-01-01

    Full Text Available Cadmium sulfide (CdS thin films were deposited by chemical bath deposition (CBD onto polymeric composites with electric field-aligned multiwall carbon nanotubes (MWCNTs. MWCNT/polysulfone composites were prepared by dispersing low concentrations of MWCNTs within dissolved polysulfone (PSF. An alternating current electric field was “in situ” applied to align the MWCNTs within the dissolved polymer along the field direction until the solvent was evaporated. 80 μm thick solid MWCNT/PSF composites with an electrical conductivity 13 orders of magnitude higher than the conductivity of the neat PSF were obtained. The MWCNT/PSF composites were subsequently used as flexible substrates for the deposition of CdS thin films by CBD. Transparent and adherent CdS thin films with an average thickness of 475 nm were obtained. The values of the energy band gap, average grain size, rms roughness, crystalline structure, and preferential orientation of the CdS films deposited onto the polymeric substrate were very similar to the corresponding values of the CdS deposited onto glass (conventional substrate. These results show that the MWCNT/PSF composites with electric field-tailored MWCNTs represent a suitable option to be used as flexible conducting substrate for CdS thin films, which represents an important step towards the developing of flexible systems for photovoltaic applications.

  11. Synthesis of thin films by the pyrosol process

    Directory of Open Access Journals (Sweden)

    Tucić Aleksandar

    2002-01-01

    Full Text Available Among many aerosol routes, the Pyrosol process, due to its simplicity, low cost and quality of obtained films, represents a promising technique for the synthesis of thin films. The pyrosol process is based on the transport and pyrolysls of an aerosol of processor solution, generated in an ultrasonic atomizer, on a heated substrate. The theoretical principles of the pyrosol process are presented in this paper, as well as the influence of some synthesis parameters on the deposition of SnO2 thin films.

  12. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  13. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  14. Helium-Charged Titanium Films Deposited by Pulsed Laser Deposition in an Electron-Cyclotron-Resonance Helium Plasma Environment

    Institute of Scientific and Technical Information of China (English)

    金钦华; 胡佩钢; 凌浩; 吴嘉达; 施立群; 周筑颖

    2003-01-01

    Titanium thin films incorporated with helium are produced by pulsed laser deposition in an electron cyclotron resonance helium plasma environment. Helium is distributed evenly in the film and a relatively high He/Ti atomic ratio (~ 20%) is obtained from the proton backscattering spectroscopy. This high concentration ofhelium leads to a surface blistering which is observed by scanning electron microscopy. Laser repetition rate has little influence on film characters. Substrate bias voltage is also changed for the helium incorporating mechanism study, and this is a helium ion implantation process during the film growth. Choosing suitable substrate bias voltage, one can avoid the damage produced by ion implantation, which is always present in general implantation case.

  15. CHEMICALLY DEPOSITED SILVER FILM USED AS A SERS-ACTIVE OVER COATING LAYER FOR POLYMER FILM

    Institute of Scientific and Technical Information of China (English)

    Xiao-ning Liu; Gi Xue; Yun Lu; Jun Zhang; Fen-ting Li; Chen-chen Xue; Stephen Z.D. Cheng

    2001-01-01

    When colloidal silver particles were chemically deposited onto polymer film as an over-coating layer, surfaceenhanced Raman scattering (SERS) spectra could be collected for the surface analysis. SERS measurements of liquid crystal film were successfully performed without disturbing the surface morphology.

  16. Laser deposition and direct-writing of thermoelectric misfit cobaltite thin films

    Science.gov (United States)

    Chen, Jikun; Palla-Papavlu, Alexandra; Li, Yulong; Chen, Lidong; Shi, Xun; Döbeli, Max; Stender, Dieter; Populoh, Sascha; Xie, Wenjie; Weidenkaff, Anke; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

    2014-06-01

    A two-step process combining pulsed laser deposition of calcium cobaltite thin films and a subsequent laser induced forward transfer as micro-pixel is demonstrated as a direct writing approach of micro-scale thin film structures for potential applications in thermoelectric micro-devices. To achieve the desired thermo-electric properties of the cobaltite thin film, the laser induced plasma properties have been characterized utilizing plasma mass spectrometry establishing a direct correlation to the corresponding film composition and structure. The introduction of a platinum sacrificial layer when growing the oxide thin film enables a damage-free laser transfer of calcium cobaltite thereby preserving the film composition and crystallinity as well as the shape integrity of the as-transferred pixels. The demonstrated direct writing approach simplifies the fabrication of micro-devices and provides a large degree of flexibility in designing and fabricating fully functional thermoelectric micro-devices.

  17. Environmentally stable sputter-deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, D.J.

    1978-03-01

    Accelerated corrosion data are presented for the titanium-silver and chrome-gold thin film metallization systems presently used at Sandia Laboratories. Improvements in corrosion, hence reliability, as a result of interposing a thin intermediate layer of either platinum or palladium are shown. Potentiometric measurements showing the alteration of corrosion potential with the use of palladium for the titanium-silver system are also presented.

  18. Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Zhou Kai

    2010-01-01

    Full Text Available Abstract The structure of vertically aligned carbon nanotubes (CNTs severely depends on the properties of pre-prepared catalyst films. Aiming for the preparation of precisely controlled catalyst film, atomic layer deposition (ALD was employed to deposit uniform Fe2O3 film for the growth of CNT arrays on planar substrate surfaces as well as the curved ones. Iron acetylacetonate and ozone were introduced into the reactor alternately as precursors to realize the formation of catalyst films. By varying the deposition cycles, uniform and smooth Fe2O3 catalyst films with different thicknesses were obtained on Si/SiO2 substrate, which supported the growth of highly oriented few-walled CNT arrays. Utilizing the advantage of ALD process in coating non-planar surfaces, uniform catalyst films can also be successfully deposited onto quartz fibers. Aligned few-walled CNTs can be grafted on the quartz fibers, and they self-organized into a leaf-shaped structure due to the curved surface morphology. The growth of aligned CNTs on non-planar surfaces holds promise in constructing hierarchical CNT architectures in future.

  19. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    OpenAIRE

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resist...

  20. In situ measurement of conductivity during nanocomposite film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Blattmann, Christoph O.; Pratsinis, Sotiris E., E-mail: sotiris.pratsinis@ptl.mavt.ethz.ch

    2016-05-15

    Highlights: • Flame-made nanosilver dynamics are elucidated in the gas-phase & on substrates. • The resistance of freshly depositing nanosilver layers is monitored. • Low T{sub g} polymers facilitate rapid synthesis of conductive films. • Conductive nanosilver films form on top of or within the polymer depending on MW. - Abstract: Flexible and electrically conductive nanocomposite films are essential for small, portable and even implantable electronic devices. Typically, such film synthesis and conductivity measurement are carried out sequentially. As a result, optimization of filler loading and size/morphology characteristics with respect to film conductivity is rather tedious and costly. Here, freshly-made Ag nanoparticles (nanosilver) are made by scalable flame aerosol technology and directly deposited onto polymeric (polystyrene and poly(methyl methacrylate)) films during which the resistance of the resulting nanocomposite is measured in situ. The formation and gas-phase growth of such flame-made nanosilver, just before incorporation onto the polymer film, is measured by thermophoretic sampling and microscopy. Monitoring the nanocomposite resistance in situ reveals the onset of conductive network formation by the deposited nanosilver growth and sinternecking. The in situ measurement is much faster and more accurate than conventional ex situ four-point resistance measurements since an electrically percolating network is detected upon its formation by the in situ technique. Nevertheless, general resistance trends with respect to filler loading and host polymer composition are consistent for both in situ and ex situ measurements. The time lag for the onset of a conductive network (i.e., percolation) depends linearly on the glass transition temperature (T{sub g}) of the host polymer. This is attributed to the increased nanoparticle-polymer interaction with decreasing T{sub g}. Proper selection of the host polymer in combination with in situ resistance

  1. Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition

    Science.gov (United States)

    Jung, Jae-Soo; Lee, Sang-Hoon; Kim, Da-Seul; Kim, Kun-Su; Park, Soon-Won; Hwang, Nong-Moon

    2017-01-01

    The deposition behavior of silicon films by hot wire chemical vapor deposition (HWCVD) was approached by non-classical crystallization, where the building block of deposition is a nanoparticle generated in the gas phase of the reactor. The puzzling phenomenon of the formation of an amorphous incubation layer on glass could be explained by the liquid-like property of small charged nanoparticles (CNPs), which are generated in the initial stage of the HWCVD process. Using the liquid-like property of small CNPs, homo-epitaxial growth as thick as 150 nm could be successfully grown on a silicon wafer at 600 °C under the processing condition where CNPs as small as possible could be supplied steadily by a cyclic process which periodically resets the process. The size of CNPs turned out to be an important parameter in the microstructure evolution of thin films.

  2. Structure and Morphology of Phthalocyanine Films Grown in Electrical Fields by Vapor Deposition

    Science.gov (United States)

    Zhu, Shen; Banks, C. E.; Frazier, D. O.; Penn, B.; Abdeldayem, H.; Hicks, R.; Burns, H. D.; Thompson, G. W.

    1999-01-01

    Phthalocyanine (Pc) films have been synthesized by vapor deposition on quartz substrates, some of which were coated with a very thin gold film before depositing Pc films. Electrical fields up to 6200 V/cm between a mech electrode and the substrate are introduced during film growth. These films have been characterized by x-ray diffraction and scanning electron microscopy. The molecular orientations and surface morphology of Pc films were changed under the electrical fields. The surface of these films grown without electrical field shows whisk-like morphology. When films are deposited under an electrical field, a dense film with flat surface is obtained.

  3. Protection of elastomers with DLC film : deposition, characterization and performance

    NARCIS (Netherlands)

    Martinez Martinez, Diego

    2017-01-01

    Elastomers are materials which suffer from strong wear and cause high friction losses when subjected to dynamic contact, leading quite often to failure of the components in devices. In this Thesis, the protection of elastomers by the deposition of carbon-based films (DLC) is studied. To accomplish t

  4. Flame spray pyrolysis synthesis and aerosol deposition of nanoparticle films

    DEFF Research Database (Denmark)

    Tricoli, Antonio; Elmøe, Tobias Dokkedal

    2012-01-01

    The assembly of nanoparticle films by flame spray pyrolysis (FSP) synthesis and deposition on temperature‐controlled substrates (323–723 K) was investigated for several application‐relevant conditions. An exemplary SnO2 nanoparticle aerosol was generated by FSP and its properties (e.g., particle...

  5. Nano-Impact (Fatigue Characterization of As-Deposited Amorphous Nitinol Thin Film

    Directory of Open Access Journals (Sweden)

    Rehan Ahmed

    2012-08-01

    Full Text Available This paper presents nano-impact (low cycle fatigue behavior of as-deposited amorphous nitinol (TiNi thin film deposited on Si wafer. The nitinol film was 3.5 µm thick and was deposited by the sputtering process. Nano-impact tests were conducted to comprehend the localized fatigue performance and failure modes of thin film using a calibrated nano-indenter NanoTest™, equipped with standard diamond Berkovich and conical indenter in the load range of 0.5 mN to 100 mN. Each nano-impact test was conducted for a total of 1000 fatigue cycles. Depth sensing approach was adapted to understand the mechanisms of film failure. Based on the depth-time data and surface observations of films using atomic force microscope, it is concluded that the shape of the indenter test probe is critical in inducing the localized indentation stress and film failure. The measurement technique proposed in this paper can be used to optimize the design of nitinol thin films.

  6. Pulsed laser deposition of nanostructured Co-B-O thin films as efficient catalyst for hydrogen production

    Energy Technology Data Exchange (ETDEWEB)

    Jadhav, H., E-mail: jadhav.hs2013@gmail.com [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Singh, A.K. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Patel, N.; Fernandes, R.; Gupta, S.; Kothari, D.C. [Department of Physics and National Centre for Nanosciences & Nanotechnology, University of Mumbai, Vidyanagari, Santacruz (E), Mumbai 400098 (India); Miotello, A. [Dipartimento di Fisica, Università degli Studi di Trento, I-38123 Povo, Trento (Italy); Sinha, S. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2016-11-30

    Highlights: • Pulsed laser deposition was used to deposit Co-B-O film nanocatalyst. • Co-B-O NPs are well separated, stable and immobilized on film surface. • Catalytic H{sub 2} production was studied by hydrolysis of Sodium Borohydride. • Four times higher H{sub 2} production rate was recorded for Co-B-O film than Co-B-O powder. • High particle density, polycrystalline nature and good stability against agglomeration of Co NPs. - Abstract: Nanoparticles assembled Co-B-O thin film catalysts were synthesized by pulsed laser deposition (PLD) technique for hydrolysis of Sodium Borohydride (SBH). Surface morphology of the deposited films was investigated using SEM and TEM, while compositional analysis was studied using XPS. Structural properties of Co-B-O films were examined using XRD and HRTEM. Laser process is able to produce well separated and immobilized Co-B-O NPs on the film surface which act as active centers leading to superior catalytic activity producing hydrogen at a significantly higher rate as compared to bulk powder. Co-B-O thin film catalyst produces hydrogen at a maximum rate of ∼4400 ml min{sup −1} g{sup −1} of catalyst, which is four times higher than powder catalyst. PLD parameters such as laser fluence and substrate-target distance were varied during deposition in order to understand the role of size and density of the immobilized Co-B-O NPs in the catalytic process. Films deposited at 3–5 cm substrate-target distance showed better performance than that deposited at 6 cm, mainly on account of the higher density of active Co-B-O NPs on the films surface. Features such as high particle density, polycrystalline nature of Co NPs and good stability against agglomeration mainly contribute towards the superior catalytic activity of Co-B-O films deposited by PLD.

  7. Improved liquid-solid-gas interface deposition of nanoparticle thin films

    Institute of Scientific and Technical Information of China (English)

    Diao Jia-Jie; Chen Guang-De; Qiu Fu-Sheng; Yan Guo-Jun

    2004-01-01

    A liquid-solid-gas interface deposition method to prepare nanoparticle thin films is presented in this paper. The nanoparticles in the part of suspension located close to the solid-liquid-gas interface grow on the substrate under the influence of interface force when the partially immersed substrate moves relatively to the suspension. By using statistical theory of the Brownian motion, growth equations for mono-component and multi-component nanoparticle thin films are obtained and some parameters for deposition process are discussed.

  8. Hydrogen-Induced Buckling of Pd Films Deposited on Various Substrates

    KAUST Repository

    Vlček, Marián

    2015-07-01

    A Pd-H system is a model system suitable for studying interactions of hydrogen with metals. In the present work, we studied hydrogen-induced buckling of thin Pd films deposited on various substrates with different bonding strengths (sapphire, glimmer) and also the effect of deposition temperature. Lattice expansion and phase transitions were investigated by X-ray diffraction of synchrotron radiation. The influence of the substrate and microstructure of the film on the buckling process and phase transformation to palladium hydride are discussed.

  9. YBCO thin film evaporation on as-deposited silver film on MgO

    Science.gov (United States)

    Azoulay, J.

    1999-11-01

    YBa 2Cu 3O 7- δ (YBCO) thin film was evaporated on as-deposited Ag buffer layer on MgO substrate. A simple, inexpensive vacuum system equipped with one resistively heated source was used. The subsequent heat treatment was carried out under low oxygen partial pressure at a relatively low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using DC four-probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). It is shown that YBCO thin film can grow on as-deposited thin silver layer on MgO substrate.

  10. Deposition of Ge{sub 23}Sb{sub 7}S{sub 70} chalcogenide glass films by electrospray

    Energy Technology Data Exchange (ETDEWEB)

    Novak, Spencer, E-mail: spencen@g.clemson.edu [Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, SC (United States); College of Optics and Photonics, CREOL, University of Central FL (United States); Johnston, Danvers E.; Li, Cheng; Deng, Weiwei [Department of Mechanical and Aerospace Engineering, University of Central FL (United States); Richardson, Kathleen [Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, SC (United States); College of Optics and Photonics, CREOL, University of Central FL (United States)

    2015-08-03

    Solution-based chalcogenide glass films, traditionally deposited by spin-coating, are attractive for their potential use in chip-based devices operating in the mid-infrared and for ease of nanostructure incorporation. To overcome limitations of spin-coating such as excessive material waste and difficulty for scale-up, this paper introduces electrospray as a film deposition technique for solution-based chalcogenide glasses. Electrospray is shown to produce Ge{sub 23}Sb{sub 7}S{sub 70} films with similar surface quality and optical properties as films deposited by spin-coating. The advantages of electrospray deposition for nanoparticle dispersion, scalable and continuous manufacturing with little material waste, and comparable film quality to spin-coating make electrospray a promising deposition method for practical applications of chalcogenide glass films. - Highlights: • Electrospray film deposition processing of Ge{sub 23}Sb{sub 7}S{sub 70} films was developed. • Traditional spin-coated films were also fabricated in parallel. • Optical properties and surface quality found to be similar between two approaches.

  11. Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp

    Science.gov (United States)

    Maezono, Yoshinari; Toshikawa, Kiyohiko; Kurosawa, Kou; Amari, Kouichi; Ishimura, Sou; Katto, Masahito; Yokotani, Atsushi

    2007-06-01

    In this paper, we report the deposition of silicon nitride (SiNx) films for the production of semiconductor devices and flat panel displays, by chemical vapor deposition with vacuum ultraviolet excimer lamps (VUV-CVD) using SiH4 and NH3 as raw materials. An Ar2* excimer lamp (λ=126 nm, hν=9.8 eV) with a high photon energy was used to directly excite and dissociate SiH4 through a photochemical reaction. SiNx films were successfully formed at a low temperature of 100 °C with the Ar2* excimer lamp. Although the Si-rich films were obtained using an Ar2* lamp, they showed a quality almost similar to that of films obtained by conventional plasma-CVD at 400 °C.

  12. Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

    Indian Academy of Sciences (India)

    Mahtab Ullah; Ejaz Ahmed; Abdelbary Elhissi; Waqar Ahmed

    2014-05-01

    Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications.

  13. Preparation of (Bi, Sb) 2S 3 semiconductor films by photochemical deposition method

    Science.gov (United States)

    Sasaki, H.; Shibayama, K.; Ichimura, M.; Masui, K.

    2002-04-01

    The photochemical deposition (PCD) technique has the advantages of economy, the capability of large area deposition and of a fast reaction rate. In this report, the PCD method using UV light of an ultra-high pressure mercury lamp was applied to form (Bi x, Sb 1- x) 2S 3 semiconducting compounds from solutions containing BiCl 3 and/or SbCl 3 Na 2S 2O 3 at pH in the acidic range 1-3. The pH of the solution was adjusted with the addition of dilute HCl solution. The substrate for the film deposition was pretreated onto the commercial pyrex-glass plate surface with the well-known solution agent of Pd activator plus Sn sensitizer. In the PCD process, the film is only deposited onto the irradiated region of the substrate so as to make a pattern using the mask. This deposition process shows the heterogeneous nucleation and growth mechanism on the substrate surface. The deposition rate of the film using a 500 W mercury lamp was about 1 μm/30 min. The crystallization characteristics of the amorphous (Bi 2S 3) deposits were studied by means of X-ray diffraction, thermal analysis (DSC) and optical transmitted spectra evaluation in order to clarify the amorphous to crystal phase transformation. The amorphous deposits showed gradual light absorption in a wide range of optical wavelengths. On the contrary, annealed film showed a sharp absorption edge near 800 nm. The crystallization temperature of the amorphous deposits was about 250-300°C.

  14. Gaining new insight into low-temperature aqueous photochemical solution deposited ferroelectric PbTiO{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    De Dobbelaere, Christopher, E-mail: christopher.dedobbelaere@uhasselt.be [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, B-3500, Hasselt (Belgium); Calzada, M. Lourdes; Bretos, Iñigo; Jiménez, Ricardo; Ricote, Jesús [Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Cantoblanco, E-28049, Madrid (Spain); Hadermann, Joke [University of Antwerp, Department of Physics, EMAT, B-2020, Antwerp (Belgium); Hardy, An [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, B-3500, Hasselt (Belgium); IMEC vzw, Division IMOMEC, B-3590, Diepenbeek (Belgium); Van Bael, Marlies K., E-mail: marlies.vanbael@uhasselt.be [Hasselt University, Institute for Materials Research, Inorganic and Physical Chemistry, B-3500, Hasselt (Belgium); IMEC vzw, Division IMOMEC, B-3590, Diepenbeek (Belgium)

    2016-05-01

    The nature of the low-temperature photochemical assisted formation process of ferroelectric lead titanate (PbTiO{sub 3}) films is studied in the present work. Films are obtained by the deposition of an aqueous solution containing citric acid based (citrato) metal ion complexes with intrinsic UV activity. This UV activity is crucial for the aqueous photochemical solution deposition (aqueous PCSD) route being used. UV irradiation enhances the early decomposition of organics and results in improved electrical properties for the crystalline oxide film, even if the film is crystallized at low temperature. GATR-FTIR shows that UV irradiation promotes the decomposition of organic precursor components, resulting in homogeneous films if applied in the right temperature window during film processing. The organic content, morphology and crystallinity of the irradiated films, achieved at different processing atmospheres and temperatures, is studied and eventually correlated to the functional behavior of the obtained films. This is an important issue, as crystalline films obtained at low temperatures often lack ferroelectric responses. In this work, the film prepared in pure oxygen at the very low temperature of 400 °C and after an optimized UV treatment presents a significant remanent polarization value of P{sub r} = 8.8 μC cm{sup −2}. This value is attributed to the better crystallinity, the larger grain size and the reduced porosity obtained thanks to the early film crystallization effectively achieved through the UV treatment in oxygen. - Highlights: • Precursor chemistry enables the UV assisted film deposition process. • PbTiO3 films with improved ferroelectric response and crystallinity are obtained. • UV active components are formed during the whole film formation process. • Perovskite, ferroelectric active PbTiO3 films are formed at 400 °C. • Oxide films can be prepared at reduced temperature.

  15. Quantum confinement in amorphous TiO(2) films studied via atomic layer deposition.

    Science.gov (United States)

    King, David M; Du, Xiaohua; Cavanagh, Andrew S; Weimer, Alan W

    2008-11-05

    Despite the significant recent increase in quantum-based optoelectronics device research, few deposition techniques can reliably create the required functional nanoscale systems. Atomic layer deposition (ALD) was used here to study the quantum effects attainable through the use of this ångström-level controlled growth process. Size-dependent quantum confinement has been demonstrated using TiO(2) layers of nanoscale thickness applied to the surfaces of silicon wafers. TiO(2) films were deposited at 100 °C using TiCl(4) and H(2)O(2) in a viscous flow ALD reactor, at a rate of 0.61 Å/cycle. The low-temperature process was utilized to guarantee the amorphous deposition of TiO(2) layers and post-deposition thermal annealing was employed to promote crystallite-size modification. Hydrogen peroxide significantly reduced the residual chlorine that remained from a typical TiCl(4)-H(2)O ALD process at this temperature, down to 1.6%. Spectroscopic ellipsometry was used to quantify the optical properties both below and above the bandgap energy. A central composite design was employed to map the surface response of the film thickness-dependent bandgap shift for the as-deposited case and up to a thermal annealing temperature of 550 °C. The Brus model was used to develop a correlation between the amorphous TiO(2) film thickness and the quantum length to promote equivalent bandgap shifts.

  16. SUBSTRATE EFFECT ON HYDROGENATED MICROCRYSTALLINE SILICON FILMS DEPOSITED WITH VHF-PECVD TECHNIQUE

    Institute of Scientific and Technical Information of China (English)

    H.D. Yang

    2006-01-01

    Raman spectra and scanning electron microscope (SEM) techniques were used to determine the structural properties of microcrystalline silicon (μc-Si:H) films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition ( VHF-PECVD )technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer,corning 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Corning 7059 glass, the surfaces of the μc-Si:H films are fairly smooth because of the homogenous growth or little lattice mismatch. But for general optical glass, the surface of the μc-Si:H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si:H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material, and then the deposition rates, optical and electrical properties are also strongly influenced, hence,deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si:H films with device-grade quality on cheap substrates such as general glass.

  17. Pyrolytic carbon film deposit as an electrochemical interface.

    Directory of Open Access Journals (Sweden)

    M. Hadi

    2009-02-01

    Full Text Available A pyrolytic carbon (PC film was grown on planar substrate (graphite rods by chemical vapor deposition from gaseous feed of methane using a vertical hot-wall deposition reactor. Scanning electron microscopy was used to study the surface structure. The PC film was also characterized by cyclic voltammetry technique to evaluate the background current, stability and the electrochemical response using ascorbic acid, Co(phen32+/3+ and Fe(CN6 3-/4- redox couplesand compared to glassy carbon (GC electrode. High degree of electrochemical activity and the enhanced signal to background (S/B ratio demonstrated that the PC film might be an attractive electrode material for electroanalytical measurements.

  18. Bath Parameter Dependence of Chemically-Deposited Copper Selenide Thin Film

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    In this article, a low cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films on to glass substrate. Different thin films (0.2-0.6 μm) were prepared by adjusting the bath parameter like concentration of ammonia, deposition time, temperature of the solution, and the ratios of the mixing composition between copper and selenium in the reaction bath. From these studies, it reveals that at low concentration of ammonia or TEA, the terminal thicknesses of the films are less, which gradually increases with the increase of concentrations and then drop down at still higher concentrations. It has been found that complexing the Cu2+ ions with TEA first, and then addition of ammonia yields better results than the reverse process. The film thickness increases with the decrease of value x of Cu2-xSe.

  19. Nanostructured rhodium films produced by pulsed laser deposition for nuclear fusion applications

    Science.gov (United States)

    Passoni, M.; Dellasega, D.; Grosso, G.; Conti, C.; Ubaldi, M. C.; Bottani, C. E.

    2010-09-01

    In this paper the possibilities offered by pulsed laser deposition (PLD) for the production of nanostructured rhodium films with improved properties are explored. Thanks to its high reflectivity and low sputtering yield, rhodium is one of the best candidates for the development of thin films to be used in first mirrors, which are crucial components in many diagnostic systems of thermonuclear magnetic fusion machines, like tokamaks. Due to the features of PLD, by varying the process parameters it is possible to tailor both the structure, i.e. the nanocrystalline domain size of the deposited films, down to less than 5 nm and separately control the other relevant physical properties. This leads to modifications in growth regime and annealing dynamics, in such a way that both morphology and reflectivity achieve the properties demanded to use these films as mirrors for fusion applications, opening at the same time new possibilities for the future improvement of thermo-mechanical and adhesion properties.

  20. Structural and optical properties of tellurite thin film glasses deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Munoz-Martin, D.; Fernandez-Navarro, J.M. [Laser Processing Group, Instituto de Optica (CSIC), Serrano 121, 28006 Madrid (Spain); Gonzalo, J., E-mail: j.gonzalo@io.cfmac.csic.es [Laser Processing Group, Instituto de Optica (CSIC), Serrano 121, 28006 Madrid (Spain); Jose, G.; Jha, A. [Institute for Materials Research, University of Leeds, Clarendon Road, Leeds LS2 9JT (United Kingdom); Fierro, J.L.G. [Instituto de Catalisis y Petroleoquimica (CSIC), Marie Curie s/n, 28049 Cantoblanco (Spain); Domingo, C. [Instituto de Estructura de la Materia (CSIC), Serrano 121, 28006 Madrid (Spain); Garcia-Lopez, J. [Centro Nacional de Aceleradores, P. Tecnologico ' Cartuja 93' , 41092 Sevilla (Spain)

    2011-10-31

    Tellurite (TeO{sub 2}-TiO{sub 2}-Nb{sub 2}O{sub 5}) thin film glasses have been produced by pulsed laser deposition at room temperature at laser energy densities in the range of 0.8-1.5 J/cm{sup 2} and oxygen pressures in the range of 3-11 Pa. The oxygen concentration in the films increases with laser energy density to reach values very close to that of the bulk glass at 1.5 J/cm{sup 2}, while films prepared at 1.5 J/cm{sup 2} and pressures above 5 Pa show oxygen concentration in excess of 10% comparing to the glass. X-ray photoelectron spectroscopy shows the presence of elementary Te in films deposited at O{sub 2} pressures {<=} 5 Pa that is not detected at higher pressures, while analysis of Raman spectra of the samples suggests a progressive substitution of TeO{sub 3} trigonal pyramids by TeO{sub 4} trigonal bipyramids in the films when increasing their oxygen content. Spectroscopic ellipsometry analysis combined with Cauchy and effective medium modeling demonstrates the influence of these compositional and structural modifications on the optical response of the films. Since the oxygen content determines their optical response through the structural modifications induced in the films, those can be effectively controlled by tuning the deposition conditions, and films having large n (2.08) and reduced k (< 10{sup -4}) at 1.5 {mu}m have been produced using the optimum deposition conditions.

  1. Thin alumina and silica films by chemical vapor deposition (CVD)

    OpenAIRE

    Hofman, R.; Morssinkhof, R.W.J.; Fransen, T.; Westheim, J.G.F.; Gellings, P.J.

    1993-01-01

    Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) on alloys to protect them against high temperature corrosion. Aluminium Tri-lsopropoxide (ATI) and DiAcetoxyDitertiaryButoxySilane (DAOBS) have been used as metal organic precursors to prepare these ceramic coatings. The influence of several process steps on the deposition rate and surface morphology is discussed. The deposition of SiO2 at atmospheric pressure is kinetically limited below 833 K ...

  2. Dual ion beam deposition of carbon films with diamondlike properties

    Science.gov (United States)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1984-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

  3. Pulsed laser deposition of nano-glassy carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Ossi, P.M. [Dip. Ingegneria Nucleare and Centre of Excellence, NanoEngineered Materials and Surfaces (NEMAS), Politecnico di Milano, via Ponzio, 34-3, 20133 Milan (Italy)]. E-mail: paolo.ossi@polimi.it; Bottani, C.E. [Dip. Ingegneria Nucleare and Centre of Excellence, NanoEngineered Materials and Surfaces (NEMAS), Politecnico di Milano, via Ponzio, 34-3, 20133 Milan (Italy); Miotello, A. [Dip. Fisica, Universita di Trento, 38050 Povo (TN) (Italy)

    2005-07-30

    Carbon films have been deposited at room temperature on (1 0 0) Si substrates by pulsed laser ablation (PLA) from a highly oriented pyrolitic graphite source. Changing the laser power density from 8.5 to 19 MW mm{sup -2} and using various ambient atmospheres (helium, argon from 0.6 Pa to 2 kPa), nano-sized cluster-assembled films were obtained. Scanning electron microscopy shows that the film morphology, changes with increasing ambient gas pressure. We observed in the sequence: dense columns, node-like morphology, platelets (only in argon) and an open dendritic structure. By atomic force microscopy, on representative films, we evaluated the size distribution and relative abundancy of aggregates of carbon clusters, as well as film roughness. Raman spectroscopy shows that all the films are sp{sup 2} coordinated, structurally disordered and belong to the family of carbon nano-glasses. The estimated film coherence length gives an average size of about 5 nm for the agglomerated carbon clusters in the films. The average number of carbon atoms per cluster depends on ambient gas pressure, but is nearly independent of laser intensity.

  4. Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

    NARCIS (Netherlands)

    Rath, J.K.; Verkerk, A.D.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

    2008-01-01

    Fabrication of thin film silicon solar cells on cheap plastics or paper-like substrate requires deposition process at very low substrate temperature, typically ≤ 100 °C. In a chemical vapor deposition process, low growth temperatures lead to materials with low density, high porosity, high disorder a

  5. Gas phase considerations for the deposition of thin film silicon solar cells by VHF-PECVD at low substrate temperatures

    NARCIS (Netherlands)

    Rath, J.K.; Verkerk, A.D.; Brinza, M.; Schropp, R.E.I.; Goedheer, W.J.; Krzhizhanovskaya, V.V.; Gorbachev, Y.E.; Orlov, K.E.; Khilkevitch, E.M.; Smirnov, A.S.

    2008-01-01

    Fabrication of thin film silicon solar cells on cheap plastics or paper-like substrate requires deposition process at very low substrate temperature, typically ≤ 100 °C. In a chemical vapor deposition process, low growth temperatures lead to materials with low density, high porosity, high disorder

  6. Laser annealing study of PECVD deposited hydrogenated amorphous silicon carbon alloy films

    Science.gov (United States)

    Coscia, U.; Ambrosone, G.; Gesuele, F.; Grossi, V.; Parisi, V.; Schutzmann, S.; Basa, D. K.

    2007-12-01

    The influence of carbon content on the crystallization process has been investigated for the excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using silane methane gas mixture diluted in helium, as well as for the hydrogenated microcrystalline silicon carbon alloy films prepared by PECVD from silane methane gas mixture highly diluted in hydrogen, for comparison. The study demonstrates clearly that the increase in the carbon content prevents the crystallization process in the hydrogen diluted samples while the crystallization process is enhanced in the laser annealing of amorphous samples because of the increase in the absorbed laser energy density that occurs for the amorphous films with the higher carbon content. This, in turn, facilitates the crystallization for the laser annealed samples with higher carbon content, resulting in the formation of SiC crystallites along with Si crystallites.

  7. Effective conductivity of chemically deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Robles, M. [Universidad Autonoma del Estado de Morelos (UAEM), Cuernavaca (Mexico). Fac. de Ciencias; Tagueena-Martinez, J. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar; Del Rio, J.A. [IIM-UNAM, Temixco, Morelos (Mexico). Lab. de Energia Solar

    1997-01-30

    Chemically deposited thin films have multiple applications. However, as a result of their complex structure, their physical properties are very difficult to predict. In this paper, we use an effective medium approach to model these heterogeneous systems. We extend Thorpe`s formula for the effective electrical conductivity of elliptical holes randomly distributed in a matrix to a system composed of conducting ellipses in a conducting matrix. This extension is used to calculate the effective electrical conductivity of polycrystalline chemically deposited ZnO thin films. We compare experimental results obtained by two different deposition methods: spray pyrolysis and successive ion layer adsorption and reaction (SILAR) reported here. We select the elliptical geometric parameters from microstructural data. Good agreement between the experimental measurements and our calculation is obtained. In addition, we present a new proof of the reciprocity theorem used to derive the theoretical relation. (orig.)

  8. Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures

    Directory of Open Access Journals (Sweden)

    Beirong Zheng

    2013-01-01

    Full Text Available Surface machining processes are responsible for creating microstructures that reside near the surfaces of a substrate and are characterized by the fabrication of micromechanical structures from deposited thin films. These films can be selectively removed to build three-dimensional structures whose functionality typically requires that they should be freed from the planar substrate. Silicon nitride thin film is one of these important materials. In this paper, by adjusting the SiH2Cl2/NH3 gaseous ratio, low stress silicon nitride (LS SiN is deposited by the low pressure chemical vapor deposition (LPCVD process. The internal stress generally in 135 MPa has been detected using an FLX-2320 film stress tester. Based on the wide application in surface micromachining devices, the mechanical properties of LS SiN are measured by nanoindentation, giving the value of Young’s modulus of 224 GPa and the hardness of 22.5 GPa, respectively. Dry etching and wet etching are utilized to fabricate the LS SiN thin film for structural layers. The etching rate compared with normal Si3N4 film by LPCVD is demonstrated for silicon chip manufacture.

  9. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  10. New insights into selected-area deposition of diamond films by means of selective seeding

    CERN Document Server

    LiuHongWu; Gao Chun Xi; Han Yong; Luo Ji Feng; Zou Guang Tian; Wen Chao

    2002-01-01

    Polycrystalline diamond films have been patterned on a polished Si substrate by means of selective seeding via hot-filament chemical vapour deposition. In addition to the process of selective seeding, the CH sub 4 /H sub 2 concentration and the sizes of the patterns have effects on the selectivity. The mechanism of selective growth of diamond is also discussed in this paper.

  11. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    Science.gov (United States)

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  12. Photocatalytic ability of TiO2 porous film prepared by modified spray pyrolysis deposition technique

    National Research Council Canada - National Science Library

    SUGIYAMA, Osamu; OKUYA, Masayuki; KANEKO, Shoji

    2009-01-01

    In a spray pyrolysis deposition (SPD) technique, deposition of film material and formation of surface structure are simultaneously occur, therefore, it is suitable for the preparation of microstructure-controlled thin films...

  13. Column IIIA metal film deposition by dissociative photoionization of metal halide vapors

    Science.gov (United States)

    Geohegan, D. B.; Eden, J. G.

    1984-11-01

    Films of column IIIA metals (In, Al, and Tl) have been deposited on several different substrates (stainless steel, nickel, copper, and silver) by dissociatively photoionizing the corresponding metal iodide in a uniform electric field. Thin (≲0.2 μm) indium films have been grown on nickel by photoionizing indium monoiodide (InI) vapor with an argon fluoride (ArF) excimer laser at 193 nm. A similar process has resulted in thallium films produced from thallium iodide (TlI) vapor with a high pressure xenon lamp.

  14. Annealing dependence of residual stress and optical properties of TiO2 thin film deposited by different deposition methods.

    Science.gov (United States)

    Chen, Hsi-Chao; Lee, Kuan-Shiang; Lee, Cheng-Chung

    2008-05-01

    Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.

  15. Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Guangjie, E-mail: ygjhzh@dpe.mm.t.u-tokyo.ac.jp; Shimizu, Hideharu; Momose, Takeshi; Shimogaki, Yukihiro [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-01-15

    High-purity Ni films were deposited using hot-wire-assisted atomic layer deposition (HW-ALD) at deposition temperatures of 175, 250, and 350 °C. Negligible amount of nitrogen or carbon contamination was detected, even though the authors used NH{sub 2} radical as the reducing agent and nickelocene as the precursor. NH{sub 2} radicals were generated by the thermal decomposition of NH{sub 3} with the assist of HW and used to reduce the adsorbed metal growth precursors. To understand and improve the deposition process, the kinetics of HW-ALD were analyzed using a Langmuir-type model. Unlike remote-plasma-enhanced atomic layer deposition, HW-ALD does not lead to plasma-induced damage. This is a significant advantage, because the authors can supply sufficient NH{sub 2} radicals to deposit high-purity metallic films by adjusting the distance between the hot wire and the substrate. NH{sub 2} radicals have a short lifetime, and it was important to use a short distance between the radical generation site and substrate. Furthermore, the impurity content of the nickel films was independent of the deposition temperature, which is evidence of the temperature-independent nature of the NH{sub 2} radical flux and the reactivity of the NH{sub 2} radicals.

  16. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition

    OpenAIRE

    Ponja, S. D.; Sehmi, S. K.; Allan, E.; MacRobert, A. J.; Parkin, I. P.; Carmalt, C. J.

    2015-01-01

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activit...

  17. High conductivity transparent carbon nanotube films deposited from superacid

    Energy Technology Data Exchange (ETDEWEB)

    Hecht, David S; Lee, Roland; Hu Liangbing [Unidym Incorporated, 1244 Reamwood Drive, Sunnyvale, CA 94089 (United States); Heintz, Amy M; Moore, Bryon; Cucksey, Chad; Risser, Steven, E-mail: dhecht@gmail.com [Battelle, 505 King Avenue, Columbus, OH 43201 (United States)

    2011-02-18

    Carbon nanotubes (CNTs) were deposited from a chlorosulfonic superacid solution onto PET substrates by a filtration/transfer method. The sheet resistance and transmission (at 550 nm) of the films were 60 {Omega}/sq and 90.9% respectively, which corresponds to a DC conductivity of 12 825 S cm{sup -1} and a DC/optical conductivity ratio of 64.1. This is the highest DC conductivity reported for CNT thin films to date, and attributed to both the high quality of the CNT material and the exfoliation/doping by the superacid. This work demonstrates that CNT transparent films have not reached the conductivity limit; continued improvements will enable these films to be used as the transparent electrode for applications in solid state lighting, LCD displays, touch panels, and photovoltaics.

  18. High conductivity transparent carbon nanotube films deposited from superacid.

    Science.gov (United States)

    Hecht, David S; Heintz, Amy M; Lee, Roland; Hu, Liangbing; Moore, Bryon; Cucksey, Chad; Risser, Steven

    2011-02-18

    Carbon nanotubes (CNTs) were deposited from a chlorosulfonic superacid solution onto PET substrates by a filtration/transfer method. The sheet resistance and transmission (at 550 nm) of the films were 60 Ω/sq and 90.9% respectively, which corresponds to a DC conductivity of 12,825 S cm(-1) and a DC/optical conductivity ratio of 64.1. This is the highest DC conductivity reported for CNT thin films to date, and attributed to both the high quality of the CNT material and the exfoliation/doping by the superacid. This work demonstrates that CNT transparent films have not reached the conductivity limit; continued improvements will enable these films to be used as the transparent electrode for applications in solid state lighting, LCD displays, touch panels, and photovoltaics.

  19. Nanodiamond films deposited at moderate temperature on pure titanium substrate pretreated by ultrasonic scratching in diamond powder suspension

    Institute of Scientific and Technical Information of China (English)

    Syed Jawid Askari; Fanxiu Lv; Akhtar Farid; Fengying Wang; Qi He; Zuyuan Zhou

    2006-01-01

    Nanocrystalline diamond (NCD) film deposition on pure titanium and Ti alloys is extraordinarily difficult because of the high diffusion coefficient of carbon in Ti, the large mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty to achieve very high nucleation density. In this investigation, NCD films were successfully deposited on pure Ti substrate by using a novel substrate pretreatment of ultrasonic scratching in a diamond powder-ethanol suspension and by a two-step process at moderate temperature. It was shown that by scratching with a 30-μm diamond suspension for 1 h, followed by a 10-h diamond deposition, a continuous NCD film was obtained with an average grain size of about 200 nm. Detailed experimental results on the preparation, characterization, and successful deposition of the NCD films on Ti were discussed.

  20. Reactive sputtering deposition of SiO2 thin films

    Directory of Open Access Journals (Sweden)

    IVAN RADOVIC

    2008-01-01

    Full Text Available SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×10-6–2×10-4 mbar and of the ion beam current on the target (1.67–6.85 mA. The argon partial pressure during operation of the ion gun was 1×10-3 mbar. The substrate temperature was held at 550 °C and the films were deposited to a thickness of 12.5–150 nm, at a rate from 0.0018–0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis. Reactive sputtering was proved to be efficient for the deposition of silica at 550 °C, an oxygen partial pressure of 2×10-4 mbar (ion beam current on the target of 5 mA or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6×10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

  1. Analysis of cucl thin-film deposition and growth by close-space sublimation

    Science.gov (United States)

    Nicholson, Anthony

    There is a growing need to implement high fidelity, scalable computational models to various thin-film photovoltaic industries. Developing accurate simulations that govern the thermal and species-transport diffusion characteristics within thin-film manufacturing processes will lead to better predictions of thin-film uniformity at varied deposition conditions that ultimately save time, money, and resources. Thin-film deposition and growth of Copper I Chloride (CuCl) by the Close-Space Sublimation (CSS) process was investigated in an extensive range of operating and thermal conditions. A simulation model based on the ANSYS FLUENT RTM solver platform was developed to encompass the kinetic behavior of the CuCl species within the CSS domain while predicting the growth rate at varied system parameters. Surface physics associated with the process, notably sublimation and adsorption, were studied, quantified, and applied to the continuum-based thin-film deposition model. Experimentation of CuCl thin-film growth was performed across a range of substrate and source temperatures for verification of the model's computational accuracy. Furthermore, characterization of the inherent growth mode exhibited by CuCl was studied in conjunction with simulation and experimental tasks. It was concluded that the simulation model provided predictions for the CuCl thickness as a function of temperature within the range of typical CSS conditions. Equally important was the elucidation of the CuCl growth mechanism, which displays a Volmer-Weber growth mode on the Fluorine-doped Tin Oxide coated layer of the substrate. Such knowledge along with the current modeling capabilities will be useful in extending the computational method to predicting the non-uniformities present in CuCl and other thin-film depositions.

  2. Thin film deposition using rarefied gas jet

    Science.gov (United States)

    Pradhan, Sahadev, , Dr.

    2017-01-01

    The rarefied gas jet of aluminium is studied at Mach number Ma =(U_j /√{ kbTj / m }) in the range .01 mass and diameter, and kb is the Boltzmann constant. An important finding is that the capture width (cross-section of the gas jet deposited on the substrate) is symmetric around the centerline of the substrate, and decreases with increased Mach number due to an increase in the momentum of the gas molecules. DSMC simulation results reveals that at low Knudsen number ((Kn =0.01); shorter mean free paths), the atoms experience more collisions, which direct them toward the substrate. However, the atoms also move with lower momentum at low Mach number ,which allows scattering collisions to rapidly direct the atoms to the substrate.

  3. Porous Gold Films Fabricated by Wet-Chemistry Processes

    Directory of Open Access Journals (Sweden)

    Aymeric Pastre

    2016-01-01

    Full Text Available Porous gold films presented in this paper are formed by combining gold electroless deposition and polystyrene beads templating methods. This original approach allows the formation of conductive films (2 × 106 (Ω·cm−1 with tailored and interconnected porosity. The porous gold film was deposited up to 1.2 μm on the silicon substrate without delamination. An original zirconia gel matrix containing gold nanoparticles deposited on the substrate acts both as an adhesion layer through the creation of covalent bonds and as a seed layer for the metallic gold film growth. Dip-coating parameters and gold electroless deposition kinetics have been optimized in order to create a three-dimensional network of 20 nm wide pores separated by 20 nm thick continuous gold layers. The resulting porous gold films were characterized by GIXRD, SEM, krypton adsorption-desorption, and 4-point probes method. The process is adaptable to different pore sizes and based on wet-chemistry. Consequently, the porous gold films presented in this paper can be used in a wide range of applications such as sensing, catalysis, optics, or electronics.

  4. Chemical bath deposition and characterization of Cu2O-CuxS thin films

    OpenAIRE

    EYA, D. D. O.

    2010-01-01

    Cu2O-CuxS thin films have been deposited on glass substrate by chemical bath deposition technique. The films were obtained by depositing Copper Sulphide (CuxS) on Copper (I) Oxide (Cu2O) and then Cu2O on CuxS. The peak solar transmittance across the thin films were found to be

  5. Piezoelectric ceramic thick films deposited on silicon substrates by screen printing

    Science.gov (United States)

    Yao, Kui; He, Xujiang; Xu, Yuan; Chen, Meima

    2004-07-01

    Screen-printing processes offer advantages in producing directly patterned and integrated piezoelectric elements, and fill an important technological gap between thin film and bulk ceramics. However, several existing problems in the screen-printed piezoelectric thick films, such as the poor reliability and the required high sintering temperature, are significantly limiting their applications. In this work, lead zirconate titanate (PZT) ceramic films of 30 μm in thickness were deposited on Pt-coated silicon substrates by the screen-printing process, in which the ceramic pastes were prepared through a chemical liquid-phase doping approach. Porous thick films with good adhesion were formed on the substrates at a temperature of 925°C. Stable out-of-plane piezoelectric vibration of the thick films was observed with a laser scanning vibrometer (LSV), and the piezoelectric dilatation magnitude was determined accordingly. Our piezoelectric measurements through the areal displacement detection with LSV exhibited distinct advantages for piezoelectric film characterization, including high reliability, high efficiency, and comprehensive information. The longitudinal piezoelectric coefficients of the thick films were calculated from the measured dilatation data through a numerical simulation. High piezoelectric voltage constants were obtained due to the very low dielectric constant of the porous thick films. The application potentials of our screen-printed thick films as integrated piezoelectric sensors are discussed.

  6. Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition

    Science.gov (United States)

    Linzen, S.; Ziegler, M.; Astafiev, O. V.; Schmelz, M.; Hübner, U.; Diegel, M.; Il'ichev, E.; Meyer, H.-G.

    2017-03-01

    We studied and optimised the properties of ultrathin superconducting niobium nitride films fabricated with a plasma-enhanced atomic layer deposition (PEALD) process. By adjusting process parameters, the chemical embedding of undesired oxygen into the films was minimised and a film structure consisting of mainly polycrystalline niobium nitride with a small fraction of amorphous niobium oxide and niobium oxo-nitrides were formed. For this composition a critical temperature of 13.8 K and critical current densities of 7 × 106 A cm-2 at 4.2 K were measured on 40 nm thick films. A fundamental correlation between these superconducting properties and the crystal lattice size of the cubic δ-niobium-nitride grains were found. Moreover, the film thickness variation between 40 and 2 nm exhibits a pronounced change of the electrical conductivity at room temperature and reveals a superconductor-insulator-transition in the vicinity of 3 nm film thickness at low temperatures. The thicker films with resistances up to 5 kΩ per square in the normal state turn to the superconducting one at low temperatures. The perfect thickness control and film homogeneity of the PEALD growth make such films extremely promising candidates for developing novel devices on the coherent quantum phase slip effect.

  7. Production of selective membranes using plasma deposited nanochanneled thin films

    Directory of Open Access Journals (Sweden)

    Rodrigo Amorim Motta Carvalho

    2006-12-01

    Full Text Available The hydrolization of thin films obtained by tetraethoxysilane plasma polymerization results in the formation of a nanochanneled silicone like structure that could be useful for the production of selective membranes. Therefore, the aim of this work is to test the permeation properties of hydrolyzed thin films. The films were tested for: 1 permeation of polar organic compounds and/or water in gaseous phase and 2 permeation of salt in liquid phase. The efficiency of permeation was tested using a quartz crystal microbalance (QCM technique in gas phase and conductimetric analysis (CA in liquid phase. The substrates used were: silicon for characterization of the deposited films, piezoelectric quartz crystals for tests of selective membranes and cellophane paper for tests of permeation. QCM analysis showed that the nanochannels allow the adsorption and/or permeation of polar organic compounds, such as acetone and 2-propanol, and water. CA showed that the films allow salt permeation after an inhibition time needed for hydrolysis of the organic radicals within the film. Due to their characteristics, the films can be used for grains protection against microorganism proliferation during storage without preventing germination.

  8. Growth and microstructure properties of microcrystalline silicon films deposited using jet-ICPCVD

    Institute of Scientific and Technical Information of China (English)

    Zuo Zewen; Guan Wentian; Xin Yu; Lü Jin; Wang Junzhuan; Pu Lin; Shi Yi; Zheng Youdou

    2011-01-01

    Microcrystalline silicon films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD).An investigation into the deposition rate and microstructure properties of the deposited films showed that a high deposition rate of over 20 nm/s can be achieved while maintaining reasonable material quality.The deposition rate can be controlled by regulating the generation rate and transport of film growth precursors.The film with high crystallinity deposited at low temperature could principally result from hydrogen-induced chemical annealing.

  9. Physical investigation of electrophoretically deposited graphene oxide and reduced graphene oxide thin films

    Science.gov (United States)

    Politano, Grazia Giuseppina; Versace, Carlo; Vena, Carlo; Castriota, Marco; Ciuchi, Federica; Fasanella, Angela; Desiderio, Giovanni; Cazzanelli, Enzo

    2016-11-01

    Graphene oxide and reduced graphene oxide thin films are very promising materials because they can be used in optoelectronic devices and in a growing range of applications such as touch screens and flexible displays. In this work, graphene oxide (GO) and thermally reduced graphene oxide (rGO) thin films, deposited on Ti/glass substrates, have been obtained by electrophoretic deposition. The morphological and the structural properties of the samples have been investigated by micro-Raman technique, X-ray reflectometry, and SEM analysis. In order to study the optical and electrical properties, variable angle spectroscopic ellipsometry and impedance analysis have been performed. The thermal annealing changes strongly the structural, electrical, and optical properties, because during the thermal processes some amount of sp3 bonds originally present in GO were removed. In particular, the annealing enhances the Ohmic behavior of the rGO film increasing its conductivity and the estimated optical density. Moreover, using electrophoretic deposition, we have found a higher value of optical density for GO thin films, not observed in GO films obtained with other deposition methods.

  10. Silicon nanomembranes as a means to evaluate stress evolution in deposited thin films

    Science.gov (United States)

    Anna M. Clausen; Deborah M. Paskiewicz; Alireza Sadeghirad; Joseph Jakes; Donald E. Savage; Donald S. Stone; Feng Liu; Max G. Lagally

    2014-01-01

    Thin-film deposition on ultra-thin substrates poses unique challenges because of the potential for a dynamic response to the film stress during deposition. While theoretical studies have investigated film stress related changes in bulk substrates, little has been done to learn how stress might evolve in a film growing on a compliant substrate. We use silicon...

  11. Liposomes as drug deposits in multilayered polymer films.

    Science.gov (United States)

    Lynge, Martin E; Laursen, Marie Baekgaard; Hosta-Rigau, Leticia; Jensen, Bettina E B; Ogaki, Ryosuke; Smith, Anton A A; Zelikin, Alexander N; Städler, Brigitte

    2013-04-24

    The ex vivo growth of implantable hepatic or cardiac tissue remains a challenge and novel approaches are highly sought after. We report an approach to use liposomes embedded within multilayered films as drug deposits to deliver active cargo to adherent cells. We verify and characterize the assembly of poly(l-lysine) (PLL)/alginate, PLL/poly(l-glutamic acid), PLL/poly(methacrylic acid) (PMA), and PLL/cholesterol-modified PMA (PMAc) films, and assess the myoblast and hepatocyte adhesion to these coatings using different numbers of polyelectrolyte layers. The assembly of liposome-containing multilayered coatings is monitored by QCM-D, and the films are visualized using microscopy. The myoblast and hepatocyte adhesion to these films using PLL/PMAc or poly(styrenesulfonate) (PSS)/poly(allyl amine hydrochloride) (PAH) as capping layers is evaluated. Finally, the uptake of fluorescent lipids from the surface by these cells is demonstrated and compared. The activity of this liposome-containing coating is confirmed for both cell lines by trapping the small cytotoxic compound thiocoraline within the liposomes. It is shown that the biological response depends on the number of capping layers, and is different for the two cell lines when the compound is delivered from the surface, while it is similar when administered from solution. Taken together, we demonstrate the potential of liposomes as drug deposits in multilayered films for surface-mediated drug delivery.

  12. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    Science.gov (United States)

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

  13. Deposition and characterization of silicon thin-films by aluminum-induced crystallization

    Science.gov (United States)

    Ebil, Ozgenc

    Polycrystalline silicon (poly-Si) as a thin-film solar cell material could have major advantages compared to non-silicon thin-film technologies. In theory, thin-film poly-Si may retain the performance and stability of c-Si while taking advantage of established manufacturing techniques. However, poly-Si films deposited onto foreign substrates at low temperatures typically have an average grain size of 10--50 nm. Such a grain structure presents a potential problem for device performance since it introduces an excessive number of grain boundaries which, if left unpassivated, lead to poor solar cell properties. Therefore, for optimum device performance, the grain size of the poly-Si film should be at least comparable to the thickness of the films. For this project, the objectives were the deposition of poly-Si thin-films with 2--5 mum grain size on glass substrates using in-situ and conventional aluminum-induced crystallization (AIC) and the development of a model for AIC process. In-situ AIC experiments were performed using Hot-Wire Chemical Vapor Deposition (HWCVD) both above and below the eutectic temperature (577°C) of Si-Al binary system. Conventional AIC experiments were performed using a-Si layers deposited on aluminum coated glass substrates by Electron-beam deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) and HWCVD. Continuous poly-Si films with an average grain size of 10 mum on glass substrates were achieved by both in-situ and conventional aluminum-induced crystallization of Si below eutectic temperature. The grain size was determined by three factors; the grain structure of Al layer, the nature of the interfacial oxide, and crystallization temperature. The interface oxide was found to be crucial for AIC process but not necessary for crystallization itself. The characterization of interfacial oxide layer formed on Al films revealed a bilayer structure containing Al2O3 and Al(OH)3 . The effective activation energy for AIC process was determined

  14. Synthesis, deposition and characterization of ferroelectric films for electrooptic devices

    Science.gov (United States)

    Tunaboylu, Bahadir

    The use of integrable ferroelectric electro-optic thin films is a revolutionary approach in the development of high-speed, low-voltage and high-contrast ratio integrated electro-optic spatial light modulators (SLM) for free-space optoelectronic interconnects. Thin films offer improved performance over bulk ferroelectric (FE) materials because of their lower modulator capacitance and operation at high speeds with low switching energies. Integration of ferroelectric thin films with silicon technology will also impact both the uncooled infrared sensor and dynamic and nonvolatile memory technologies. Ferroelectrics such as lead lanthanum zirconate titanate (PLZT) and patassium tantalate niobate (KTN) present great potential for SLMs due to their large electro-optic (EO) effect in the bulk form. The development of thin-film SLMs require electro-optic films of high optical quality with good dielectric and EO properties. High quality thin films of PLZT and KTN were deposited using RF magnetron sputtering on r-plane sapphire substrates which offer integration capability with semiconductor devices. PLZT films with extremely large peak dielectric constant, 2800 at the Curie temperature of 180sp°C, were achieved with remarkably low dissipation loss factor dielectric frequency dispersion was determined to be very small up to 1 Mhz. Also, the absorption of the light in the films was very low. A giant effective quadratic electrooptic effect was demonstrated in PLZT films. These results represent a huge leap forward for the FE-SLM technology with respect to the goal of fully integrated thin film electrooptic light modulators. Microstructural development and phase transformation kinetics in PLZT films were also analyzed for the first time and are presented here. Energy required for the formation of desirable perovskite phase was determined to be 322 kJ/mol. Single-phase PLZT films with larger average grain size showed higher dielectric constants and better EO properties as

  15. Substrate bias voltage and deposition temperature dependence on properties of rf-magnetron sputtered titanium films on silicon (100)

    Indian Academy of Sciences (India)

    B Geetha Priyadarshini; Shampa Aich; Madhusudan Chakraborty

    2014-12-01

    Thin films or a coating of any sort prior to its application into real world has to be studied for the dependence of process variables on their structural and functional properties. One such study based on the influence of substrate conditions viz. substrate-bias voltage and substrate temperature on the structural and morphological properties, could be of great interest as far as Ti thin films are concerned. From X-ray texture pole figure and electron microscopy analysis, it was found that substrate bias voltage strongly influence preferential orientation and morphology of Ti films grown on Si (100) substrate. Deposition at higher substrate temperature causes the film to react with Si forming silicides at the film/Si substrate interface. Ti film undergoes a microstructural transition from hexagonal plate-like to round-shaped grains as the substrate temperature was raised from 300 to 50 °C during film deposition.

  16. Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    ZnO,as a wide-band gap semiconductor,has recently become a new research fo-cus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy(L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition(PLD) . Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond(ns) pulsed laser abla-tion of ZnO ceramic target,the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

  17. Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

    Institute of Scientific and Technical Information of China (English)

    HE YongNing; ZHANG JingWen; YANG XiaoDong; XU QingAn; ZHU ChangChun; HOU Xun

    2007-01-01

    ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

  18. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  19. Synthesis of LSM films deposited by dip-coating on YSZ substrate; Sintese de filmes de LSM depositados por dip-coating em substratos de YSZ

    Energy Technology Data Exchange (ETDEWEB)

    Conceicao, Leandro da; Souza, Mariana M.V.M., E-mail: mmattos@eq.ufrj.b [Universidade Federal do Rio de Janeiro (EQ/UFRJ), RJ (Brazil). Escola de Quimica; Ribeiro, Nielson F.P. [Coordenacao dos Programas de Pos-graduacao de Engenharia (PEQ/COPPE/UFRJ), Rio de Janeiro, RJ (Brazil). Programa de Engenharia Quimica. Nucleo de Catalise

    2010-07-01

    The dip-coating process was used to deposit films of La{sub 0.7}Sr{sub 0.}3MnO{sub 3} (LSM) used as cathode in solid oxide fuel cells (SOFC). In this study we evaluated the relationship between the deposition parameters such as speed of withdrawal and number of deposited layers of LSM film on a substrate of 8% YSZ commercial, and structural properties, such as thickness and formation of cracks. The structure and morphology of the films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). With parameters set the film had good adhesion to the substrate with a thickness around 10 {mu}m, showing possible adherence problems when more than one layer is deposited on the substrate. (author)

  20. Preparation of silica thin films by novel wet process and study of their optical properties.

    Science.gov (United States)

    Im, Sang-Hyeok; Kim, Nam-Jin; Kim, Dong-Hwan; Hwang, Cha-Won; Yoon, Duck-Ki; Ryu, Bong-Ki

    2012-02-01

    Silicon dioxide (SiO2) thin films have gained considerable attention because of their various industrial applications. For example, SiO2 thin films are used in superhydrophilic self-cleaning surface glass, UV protection films, anti-reflection coatings, and insulating materials. Recently, many processes such as vacuum evaporation, sputtering, chemical vapor deposition, and spin coating have been widely applied to prepare thin films of functionally graded materials. However, these processes suffer from several engineering problems. For example, a special apparatus is required for the deposition of films, and conventional wet processes are not suitable for coating the surfaces of substrates with a large surface area and complex morphology. In this study, we investigated the film morphology and optical properties of SiO2 films prepared by a novel technique, namely, liquid phase deposition (LPD). Images of the SiO2 films were obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM) in order to study the surface morphology of these films: these images indicate that films deposited with different reaction times were uniform and dense and were composed of pure silica. Optical properties such as refractive index and transmittance were estimated by UV-vis spectroscopy and ellipsometry. SiO2 films with porous structures at the nanometer scale (100-250 nm) were successfully produced by LPD. The deposited film had excellent transmittance in the visible wavelength region.

  1. Electrophoretic deposition and constrained sintering of strontium titanate thick films

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, Luís; Vilarinho, Paula M., E-mail: paula.vilarinho@ua.pt; Senos, Ana M.R.

    2015-01-15

    Thick films of functional oxides are currently substituting counterparts bulk ceramics, as in the case of low loss dielectrics. For SrTiO{sub 3} (ST) based compositions it is demonstrated that electrophoretic deposition (EPD), using acetone as a suspension media with iodine addition, is a suitable technology to fabricate 12 μm thick films. The microstructural analysis of the films sintered at 1500 °C shows that highly densified microstructures can be obtained and, by slightly varying the Sr/Ti stoichiometry in the powder composition, increased densification and grain size and enlargement of the distribution with decreasing Sr/Ti ratio can be observed. In spite of the high densification of the films, it is also demonstrated that due to the constraint imposed by the substrate a smaller grain size is observed in thick films as compared to equivalent bulk ceramics. In addition, a preferential vertical pore orientation is observed in ST thick films. These results may have broad implications if one considers that the dielectric losses and dielectric tunability is affected by pore orientation, since it affects the electric field distribution. - Highlights: • Nonstoichiometry effect on microstructure of constrained sintered thick films and bulk is similar. • Increased densification and grain size and enlargement of distribution with decreasing Sr/Ti ratio. • Independent of Sr/Ti ratio smaller grain size for thick films compared to ceramics. • Preferential vertical pore orientation for constrained sintering of thick films. • Anisotropic porosity as tailoring factor to engineer permittivity and tunability.

  2. The structural characterisation of HWCVD-deposited nanocrystalline silicon films

    Directory of Open Access Journals (Sweden)

    Bibhu P. Swain

    2009-12-01

    Full Text Available Nanocrystalline silicon (nc-Si films were deposited by hot-wire chemical vapour deposition (HWCVD in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS and Raman spectroscopy. The crystalline fraction was around 30–50% and the nc-Si crystallite size was in the range 20–35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.

  3. Growth Model for Pulsed-Laser Deposited Perovskite Oxide Films

    Institute of Scientific and Technical Information of China (English)

    WANG Xu; FEI Yi-Yan; ZHU Xiang-Dong; Lu Hui-Bin; YANG Guo-Zhen

    2008-01-01

    We present a multi-level growth model that yields some of the key features of perovskite oxide film growth as observed in the reflection high energy electron diffraction(RHEED)and ellipsometry studies.The model describes the effect of deposition,temperature,intra-layer transport,interlayer transport and Ostwald ripening on the morphology of a growth surface in terms of the distribution of terraces and step edges during and after deposition.The numerical results of the model coincide well with the experimental observation.

  4. Thin film process forms effective electrical contacts on semiconductor crystals

    Science.gov (United States)

    Formigoni, N. P.; Roberts, J. S.

    1967-01-01

    Process makes microscopic, low-resistance electrical contacts on hexagonal n-type silicon carbide crystals used for microelectronic devices. A vacuum deposition of aluminum is etched to expose the bare silicon carbide where the electrical contacts are made. Sputtering alternating layers of tantalum and gold forms the alloy film.

  5. Chemical Stability of Titania and Alumina Thin Films Formed by Atomic Layer Deposition.

    Science.gov (United States)

    Correa, Gabriela C; Bao, Bo; Strandwitz, Nicholas C

    2015-07-15

    Thin films formed by atomic layer deposition (ALD) are being examined for a variety of chemical protection and diffusion barrier applications, yet their stability in various fluid environments is not well characterized. The chemical stability of titania and alumina thin films in air, 18 MΩ water, 1 M KCl, 1 M HNO3, 1 M H2SO4, 1 M HCl, 1 M KOH, and mercury was studied. Films were deposited at 150 °C using trimethylaluminum-H2O and tetrakis(dimethylamido)titanium-H2O chemistries for alumina and titania, respectively. A subset of samples were heated to 450 and 900 °C in inert atmosphere. Films were examined using spectroscopic ellipsometry, atomic force microscopy, optical microscopy, scanning electron microscopy, and X-ray diffraction. Notably, alumina samples were found to be unstable in pure water, acid, and basic environments in the as-synthesized state and after 450 °C thermal treatment. In pure water, a dissolution-precipitation mechanism is hypothesized to cause surface roughening. The stability of alumina films was greatly enhanced after annealing at 900 °C in acidic and basic solutions. Titania films were found to be stable in acid after annealing at or above 450 °C. All films showed a composition-independent increase in measured thickness when immersed in mercury. These results provide stability-processing relationships that are important for controlled etching and protective barrier layers.

  6. Thin film deposition at atmospheric pressure using dielectric barrier discharges: Advances on three-dimensional porous substrates and functional coatings

    Science.gov (United States)

    Fanelli, Fiorenza; Bosso, Piera; Mastrangelo, Anna Maria; Fracassi, Francesco

    2016-07-01

    Surface processing of materials by atmospheric pressure dielectric barrier discharges (DBDs) has experienced significant growth in recent years. Considerable research efforts have been directed for instance to develop a large variety of processes which exploit different DBD electrode geometries for the direct and remote deposition of thin films from precursors in gas, vapor and aerosol form. This article briefly reviews our recent progress in thin film deposition by DBDs with particular focus on process optimization. The following examples are provided: (i) the plasma-enhanced chemical vapor deposition of thin films on an open-cell foam accomplished by igniting the DBD throughout the entire three-dimensional (3D) porous structure of the substrate, (ii) the preparation of hybrid organic/inorganic nanocomposite coatings using an aerosol-assisted process, (iii) the DBD jet deposition of coatings containing carboxylic acid groups and the improvement of their chemical and morphological stability upon immersion in water.

  7. Raman spectra of amorphous carbon films deposited by SWP

    Science.gov (United States)

    Xu, Junqi; Liu, Weiguo; Hang, Lingxia; Su, Junhong; Fan, Huiqing

    2010-10-01

    Amorphous carbon film is one of the most important anti-reflection protective films coated on infrared optical components. In this paper, hydrogen-free amorphous carbon films were deposited by new type surface-wave-sustained plasma (SWP) source with a graphite target at various experiment parameters. The laser Raman spectroscopy at wavelength of 514 nm was used to investigate the structure and bonding of these carbon films. The results showed consanguineous correlations between the intensity ratio ID/IG and the experiment parameters such as microwave power, target voltage and gas pressure applied to the SWP source. Raman spectra proved the structure of these carbon films prepared by SWP technique is typical diamond-like carbon (DLC). The analysis on G peak position and intensity ratio ID/IG indicated that Raman shifts moves to low wavenumber and ID/IG decreases with the increasing of microwave power from 150 W to 330 W. These results means the formation of sp3 bond prefers higher microwave power. DLC films prepared at target voltage of -200 V have higher sp3 content than that of -350 V, moreover, an increase of gas pressure during experiments yields higher sp3 content at the microwave power below 270 W, whereas the change of sp3 content is slight with the various conditions when microwave power exceeds 270 W.

  8. Methods of Boron-carbon Deposited Film Removal

    Science.gov (United States)

    Airapetov, A.; Terentiev, V.; Voituk, A.; Zakharov, A.

    Boron carbide was proposed as a material for in-situ renewable protecting coating for tungsten tiles of the ITER divertor. It is necessary to develop a method of gasification of boron-carbon film which deposits during B4C sputtering. In this paper the results of the first stage investigation of gasification methods of boron-carbon films are presented. Two gasification methods of films are investigated: interaction with the ozone-oxygen mixture and irradiation in plasma with the working gas composed of oxygen, ethanol, and, in some cases, helium. The gasification rate in the ozone-oxygen mixture at 250 °C for B/C films with different B/C ratio and carbon fiber composite (CFC), was measured. For B/C films the gasification rate decreased with increasing B/C ratio (from 45 nm/h at B/C=0.7 to 4 nm/h at B/C=2.1; for CFC - 15 μm/h). Films gasification rates were measured under ion irradiation from ethanol-oxygen-helium plasma at different temperatures, with different ion energies and different gas mixtures. The maximum obtained removal rate was near 230 nm/h in case of ethanol-oxygen plasma and at 150°C of the sample temperature.

  9. Reactive pulsed laser deposition of gold nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Caricato, A.P. [University of Salento, Department of Physics, 73100 Lecce (Italy); Fernandez, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Leggieri, G. [University of Salento, Department of Physics, 73100 Lecce (Italy)]. E-mail: leggieri@le.infn.it; Luches, A. [University of Salento, Department of Physics, 73100 Lecce (Italy); Martino, M. [University of Salento, Department of Physics, 73100 Lecce (Italy); Romano, F. [University of Salento, Department of Physics, 73100 Lecce (Italy); Tunno, T. [University of Salento, Department of Physics, 73100 Lecce (Italy); Valerini, D. [University of Salento, Department of Physics, 73100 Lecce (Italy); Verdyan, A. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Soifer, Y.M. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Azoulay, J. [Science Department, Holon Academic Institute of Technology, Holon 58102 (Israel); Meda, L. [IGD Polimeri Europa S.p.A, Novara (Italy)

    2007-07-31

    We report on the growth and characterization of gold nitride thin films on Si <1 0 0> substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N{sub 2} or NH{sub 3}). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 deg. C. Film resistivity was measured using a four-point probe and resulted in the (4-20) x 10{sup -8} {omega} m range, depending on the ambient pressure, to be compared with the value 2.6 x 10{sup -8} {omega} m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N{sub 2} phase. All these measurements point to the formation of the gold nitride phase.

  10. Reactive pulsed laser deposition of gold nitride thin films

    Science.gov (United States)

    Caricato, A. P.; Fernàndez, M.; Leggieri, G.; Luches, A.; Martino, M.; Romano, F.; Tunno, T.; Valerini, D.; Verdyan, A.; Soifer, Y. M.; Azoulay, J.; Meda, L.

    2007-07-01

    We report on the growth and characterization of gold nitride thin films on Si substrates at room temperature by reactive pulsed laser ablation. A pure (99.95%) Au target was ablated with KrF excimer laser pulses in nitrogen containing atmosphere (N 2 or NH 3). The gas ambient pressure was varied in the range 0.1-100 Pa. The morphology of the films was studied by using optical, scanning electron and atomic force microscopy, evidencing compact films with RMS roughness in the range 3.6-35.1 nm, depending on the deposition pressure. Rutherford backscattering spectrometry and energy dispersion spectroscopy (EDS) were used to detect the nitrogen concentration into the films. The EDS nitrogen peak does not decrease in intensity after 2 h annealing at 250 °C. Film resistivity was measured using a four-point probe and resulted in the (4-20) × 10 -8 Ω m range, depending on the ambient pressure, to be compared with the value 2.6 × 10 -8 Ω m of a pure gold film. Indentation and scratch measurements gave microhardness values of 2-3 GPa and the Young's modulus close to 100 GPa. X-ray photoemission spectra clearly showed the N 1s peak around 400 eV and displaced with respect to N 2 phase. All these measurements point to the formation of the gold nitride phase.

  11. Room temperature radio-frequency plasma-enhanced pulsed laser deposition of ZnO thin films

    Science.gov (United States)

    Huang, S.-H.; Chou, Y.-C.; Chou, C.-M.; Hsiao, V. K. S.

    2013-02-01

    In this study, we compared the crystalline structures, optical properties, and surface morphologies of ZnO thin films deposited on silicon and glass substrates by conventional pulsed laser deposition (PLD) and radio-frequency (RF) plasma-enhanced PLD (RF-PEPLD). The depositions were performed at room temperature under 30-100 mTorr pressure conditions. The RF-PEPLD process was found to have deposited a ZnO structure with preferred (0 0 2) c-axis orientation at a higher deposition rate; however, the RF-PEPLD process generated more defects in the thin films. The application of oxygen pressure to the RF-PEPLD process reduced defects effectively and also increased the deposition rate.

  12. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  13. Tribological characteristics of self-assembled nanometer film deposited on phosphorylated 3-aminopropyltriethoxysilane

    Indian Academy of Sciences (India)

    J Li; X Z Li

    2011-06-01

    Thin films deposited on the phosphonate 3-aminopropyltriethoxysilane (APTES) self-assembled monolayer (SAM) were prepared on the hydroxylated silicon substrate by a self-assembling process from specially formulated solution. Chemical compositions of the films and chemical state of the elements were detected by X-ray photoelectron spectrometry (XPS). The thickness of the films was determined with an ellipsometer, while the morphologies and nanotribological properties of the samples were analyzed by means of atomic force microscopy (AFM). As the results, the target film was obtained and reaction might have taken place between the thin films and the silicon substrate. It was also found that the thin films showed the lowest friction and adhesion followed by APTESSAM and phosphorylated APTES-SAM, whereas silicon substrate showed high friction and adhesion. Microscale scratch/wear studies clearly showed that thin films were much more scratch/wear-resistant than the other samples. The superior friction reduction and scratch/wear resistance of thin films may be attributed to low work of adhesion of nonpolar terminal groups and the strong bonding strength between the films and the substrate.

  14. Deposition and characterization of titanium dioxide and hafnium dioxide thin films for high dielectric applications

    Science.gov (United States)

    Yoon, Meeyoung

    The industry's demand for higher integrated circuit density and performance has forced the gate dielectric layer thickness to decrease rapidly. The use of conventional SiO2 films as gate oxide is reaching its limit due to the rapid increase in tunneling current. Therefore, a need for a high dielectric material to produce large oxide capacitance and low leakage current has emerged. Metal-oxides such as titanium dioxide (TiO2) and hafnium dioxide (HfO2) are attractive candidates for gate dielectrics due to their electrical and physical properties suitable for high dielectric applications. MOCVD of TiO2 using titanium isopropoxide (TTIP) precursor on p-type Si(100) has been studied. Insertion of a TiO x buffer layer, formed by depositing metallic Ti followed by oxidation, at the TiO2/Si interface has reduced the carbon contamination in the TiO2 film. Elemental Ti films, analyzed by in-situ AES, were found to grow according to Stranski-Krastanov mode on Si(100). Carbon-free, stoichiometric TiO2 films were successfully produced on Si(100) without any parasitic SiO2 layers at the TiO 2/Si interface. Electron-beam deposition of HfO2 films on Si(100) has also been investigated in this work. HfO2 films are formed by depositing elemental Hf on Si(100) and then oxidizing it either in O2 or O 3. XPS results reveal that with oxidation Hf(4f) peak shifts +3.45eV with 02 and +3.65eV with O3 oxidation. LEED and AFM studies show that the initially ordered crystalline Hf becomes disordered after oxidation. The thermodynamic stability of HfO2 films on Si has been studied using a unique test-bed structure of Hf/O3/Si. Post-Oxidation of Layer Deposition (POLD) has been employed to produce HfO2 films with a desired thickness. XPS results indicate that stoichiometric HfO 2 films were successfully produced using the POLD process. The investigation of the growth and thin film properties of TiO 2 and HfO2 using oxygen and ozone has laid a foundation for the application of these metal

  15. DLC Films Deposited by the DC PACVD Method

    Directory of Open Access Journals (Sweden)

    D. Palamarchuk

    2003-01-01

    Full Text Available DLC (Diamond-Like Carbon coatings have been suggested as protective surface layers against wear. However hard DLC coatings, especially those of greater thickness, have poor adhesion to substrates. We have used several ways to increase the adhesion of DLC coatings prepared by the PACVD (Plasma Assisted Chemical Vapour Deposition method on steel substrates. One of these is the DC PACVD method for preparing DLC films.

  16. DLC Films Deposited by the DC PACVD Method

    OpenAIRE

    D. Palamarchuk; M. Zoriy; J. Gurovič; F. Černý; S. Konvičková; I. Hüttel

    2003-01-01

    DLC (Diamond-Like Carbon) coatings have been suggested as protective surface layers against wear. However hard DLC coatings, especially those of greater thickness, have poor adhesion to substrates. We have used several ways to increase the adhesion of DLC coatings prepared by the PACVD (Plasma Assisted Chemical Vapour Deposition) method on steel substrates. One of these is the DC PACVD method for preparing DLC films.

  17. Low-temperature atomic layer deposition of copper(II) oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Iivonen, Tomi, E-mail: tomi.iivonen@helsinki.fi; Hämäläinen, Jani; Mattinen, Miika; Popov, Georgi; Leskelä, Markku [Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki (Finland); Marchand, Benoît; Mizohata, Kenichiro [Division of Materials Physics, Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki (Finland); Kim, Jiyeon; Fischer, Roland A. [Chair of Inorganic Chemistry II, Ruhr-University Bochum, Universitätsstrasse 150, 44780 Bochum (Germany)

    2016-01-15

    Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap){sub 2}] and ozone in a temperature window of 80–140 °C. A thorough characterization of the films was performed using x-ray diffraction, x-ray reflectivity, UV‐Vis spectrophotometry, atomic force microscopy, field emission scanning electron microscopy, x-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis techniques. The process was found to produce polycrystalline copper(II) oxide films with a growth rate of 0.2–0.3 Å per cycle. Impurity content in the films was relatively small for a low temperature ALD process.

  18. Visible-light active thin-film WO3 photocatalyst with controlled high-rate deposition by low-damage reactive-gas-flow sputtering

    Directory of Open Access Journals (Sweden)

    Nobuto Oka

    2015-10-01

    Full Text Available A process based on reactive gas flow sputtering (GFS for depositing visible-light active photocatalytic WO3 films at high deposition rates and with high film quality was successfully demonstrated. The deposition rate for this process was over 10 times higher than that achieved by the conventional sputtering process and the process was highly stable. Furthermore, Pt nanoparticle-loaded WO3 films deposited by the GFS process exhibited much higher photocatalytic activity than those deposited by conventional sputtering, where the photocatalytic activity was evaluated by the extent of decomposition of CH3CHO under visible light irradiation. The decomposition time for 60 ppm of CH3CHO was 7.5 times more rapid on the films deposited by the GFS process than on the films deposited by the conventional process. During GFS deposition, there are no high-energy particles bombarding the growing film surface, whereas the bombardment of the surface with high-energy particles is a key feature of conventional sputtering. Hence, the WO3 films deposited by GFS should be of higher quality, with fewer structural defects, which would lead to a decrease in the number of centers for electron-hole recombination and to the efficient use of photogenerated holes for the decomposition of CH3CHO.

  19. Inkjet-based deposition of polymer thin films enabled by a lubrication model incorporating nano-scale parasitics

    Science.gov (United States)

    Singhal, Shrawan; Meissl, Mario J.; Bonnecaze, Roger T.; Sreenivasan, S. V.

    2013-09-01

    Thin film lubrication theory has been widely used to model multi-scale fluid phenomena. Variations of the same have also found application in fluid-based manufacturing process steps for micro- and nano-scale devices over large areas where a natural disparity in length scales exists. Here, a novel inkjet material deposition approach has been enabled by an enhanced thin film lubrication theory that accounts for nano-scale substrate parasitics. This approach includes fluid interactions with a thin flexible superstrate towards a new process called Jet and Coat of Thin-films (JCT). Numerical solutions of the model have been verified, and also validated against controlled experiments of polymer film deposition with good agreement. Understanding gleaned from the experimentally validated model has then been used to facilitate JCT process synthesis resulting in substantial reduction in the influence of parasitics and a concomitant improvement in the film thickness uniformity. Polymer films ranging from 20 to 500 nm mean thickness have been demonstrated with standard deviation of less than 2% of the mean film thickness. The JCT process offers advantages over spin coating which is not compatible with roll-to-roll processing and large area processing for displays. It also improves over techniques such as knife edge coating, slot die coating, as they are limited in the range of thicknesses of films that can be deposited without compromising uniformity.

  20. Electrochemical deposition of conductive and adhesive polypyrrole-dopamine films

    Science.gov (United States)

    Kim, Semin; Jang, Lindy K.; Park, Hyun S.; Lee, Jae Young

    2016-07-01

    Electrode surfaces have been widely modified with electrically conductive polymers, including polypyrrole (PPY), to improve the performance of electrodes. To utilize conductive polymers for electrode modification, strong adhesion between the polymer films and electrode substrates should be ensured with high electrical/electrochemical activities. In this study, PPY films were electrochemically polymerized on electrodes (e.g., indium tin oxide (ITO)) with dopamine as a bio-inspired adhesive molecule. Efficient and fast PPY electrodeposition with dopamine (PDA/PPY) was found; the resultant PDA/PPY films exhibited greatly increased adhesion strengths of up to 3.7 ± 0.8 MPa and the modified electrodes had electrochemical impedances two to three orders of magnitude lower than that of an unmodified electrode. This electrochemical deposition of adhesive and conductive PDA/PPY offers a facile and versatile electrode modification for various applications, such as biosensors and batteries.

  1. Magnetic Phases of Sputter Deposited Thin-Film Erbium

    Science.gov (United States)

    Witt, J. D. S.; Cooper, J. F. K.; Satchell, N.; Kinane, C. J.; Curran, P. J.; Bending, S. J.; Langridge, S.; Heyderman, L. J.; Burnell, G.

    2016-12-01

    We present a detailed structural and magnetic characterization of sputter deposited thin film erbium, determined by x-ray diffraction, transport measurements, magnetometry and neutron diffraction. This provides information on the onset and change of the magnetic state as a function of temperature and applied magnetic field. Many of the features of bulk material are reproduced. Also of interest is the identification of a conical magnetic state which repeats with a wavevector parallel to the c axis τc = 4/17 in units of the reciprocal lattice parameter c*, which is a state not observed in any other thin film or bulk measurements. The data from the various techniques are combined to construct magnetic field, temperature (H, T)–phase diagrams for the 200 nm-thick Er sample that serves as a foundation for future exploitation of this complex magnetic thin film system.

  2. Nanostructured zinc oxide thin film by simple vapor transport deposition

    Science.gov (United States)

    Athma, P. V.; Martinez, Arturo I.; Johns, N.; Safeera, T. A.; Reshmi, R.; Anila, E. I.

    2015-09-01

    Zinc oxide (ZnO) nanostructures find applications in optoelectronic devices, photo voltaic displays and sensors. In this work zinc oxide nanostructures in different forms like nanorods, tripods and tetrapods have been synthesized by thermal evaporation of zinc metal and subsequent deposition on a glass substrate by vapor transport in the presence of oxygen. It is a comparatively simpler and environment friendly technique for the preparation of thin films. The structure, morphology and optical properties of the synthesized nanostructured thin film were characterized in detail by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL). The film exhibited bluish white emission with Commission International d'Eclairage (CIE) coordinates x = 0.22, y = 0.31.

  3. EPD-deposited ZnO thin films: a review

    Energy Technology Data Exchange (ETDEWEB)

    Verde, M.

    2014-07-01

    ZnO-based materials and specifically ZnO films with tailored morphology have been subjected to extensive research in the past few years due to their high potential for multiple prospective applications, mainly in electronics. Electrophoretic Deposition (EPD) constitutes an economical, eco friendly, low energy consuming and easily scalable alternative to the high energy consuming evaporative techniques which are commonly used for the obtaining of these ZnO films. For its application, however, the use of stable, well dispersed suspensions is a necessary requirement, and thus a thorough study of their colloidal chemistry is essential. In this work the main contributions to the study of colloidal chemistry of ZnO nanoparticle suspensions and their shaping into ZnO films by EPD are summarized. (Author)

  4. Carbon film deposition from high velocity rarefied flow

    Energy Technology Data Exchange (ETDEWEB)

    Rebrov, A.K., E-mail: rebrov@itp.nsc.ru; Emelyanov, A.A.; Yudin, I.B.

    2015-01-30

    The presented study is based on the idea of the activation of a gas-precursor high velocity flow by hot wire. The wire forms the channel for flow before expansion to substrate. The construction allows change of the specific flow rate, velocity, composition and temperature of a gas mixture by studying the film synthesis in conditions from free molecular to continuum flow at velocities from hundreds to thousands of m/s. At a high pressure, the film has typical and unusual hexagonal incorporations for diamond tetragonal particles. Raman spectrum with the pronounced diamond peak is typical for diamond-like film. X-ray diffraction points in the presence of lonsdaleite. Conditions of deposition were simulated by Monte Carlo method. Collisions with hot surfaces and chemical transformations were taken into consideration as well.

  5. Inorganic and Organic Solution-Processed Thin Film Devices

    Institute of Scientific and Technical Information of China (English)

    Morteza Eslamian

    2017-01-01

    Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging tech-nologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique prop-erties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

  6. Supercritical fluid molecular spray film deposition and powder formation

    Science.gov (United States)

    Smith, Richard D.

    1986-01-01

    Solid films are deposited, or fine powders formed, by dissolving a solid material into a supercritical fluid solution at an elevated pressure and then rapidly expanding the solution through a short orifice into a region of relatively low pressure. This produces a molecular spray which is directed against a substrate to deposit a solid thin film thereon, or discharged into a collection chamber to collect a fine powder. Upon expansion and supersonic interaction with background gases in the low pressure region, any clusters of solvent are broken up and the solvent is vaporized and pumped away. Solute concentration in the solution is varied primarily by varying solution pressure to determine, together with flow rate, the rate of deposition and to control in part whether a film or powder is produced and the granularity of each. Solvent clustering and solute nucleation are controlled by manipulating the rate of expansion of the solution and the pressure of the lower pressure region. Solution and low pressure region temperatures are also controlled.

  7. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  8. Single step deposition method for nearly stoichiometric CuInSe{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, Sreejith, E-mail: s.karthikeyan@edu.salford.ac.u [Materials and Physics Research Centre, University of Salford, Salford, M5 4WT (United Kingdom); Hill, Arthur E.; Pilkington, Richard D.; Cowpe, John S. [Materials and Physics Research Centre, University of Salford, Salford, M5 4WT (United Kingdom); Hisek, Joerg [Technische Universitaet Braunschweig, Hannover (Germany); Bagnall, Darren M. [School of Electronics and Computer Science, University of Southampton, SO17 1BJ (United Kingdom)

    2011-03-01

    This paper reports the production of high quality copper indium diselenide thin films using pulsed DC magnetron sputtering from a powder target. As-grown thin films consisted of pin-hole free, densely packed grains. X-ray diffraction showed that films were highly orientated in the (112) and/or (204)/(220) direction with no secondary phases present. The most surprising and exciting outcome of this study was that the as-grown films were of near stoichiometric composition, almost independent of the composition of the starting material. No additional steps or substrate heating were necessary to incorporate selenium and create single phase CuInSe{sub 2}. Electrical properties obtained by hot point probe and four point probe gave values of low resistivity and showed that the films were all p-type. The physical and structural properties of these films were analyzed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Resistivity measurements were carried out using the four point probe and hot probe methods. The single step deposition process can cut down the cost of the complex multi step processes involved in the traditional vacuum based deposition techniques.

  9. Atomic layer deposition of nanolaminate oxide films on Si

    Science.gov (United States)

    Tallarida, M.; Weisheit, M.; Kolanek, K.; Michling, M.; Engelmann, H. J.; Schmeisser, D.

    2011-11-01

    Among the methods for depositing thin films, atomic layer deposition is unique for its capability of growing conformal thin films of compounds with a control of composition and thickness at the atomic level. The conformal growth of thin films can be of particular interest for covering nanostructures since it assures the homogeneous growth of the ALD film in all directions, independent of the position of the sample with respect to the incoming precursor flow. Here we describe the technique for growing the HfO2/Al2O3 bilayer on Si substrate and our in situ approach for its investigation by means of synchrotron radiation photoemission. In particular, we study the interface interactions between the two oxides for various thickness compositions ranging from 0.4 to 2.7 nm. We find that the ALD of HfO2 on Si induces the increase of the interfacial SiO2 layer, and a change in the band bending of Si. On the contrary, the ALD of Al2O3 on HfO2 shows negligible interaction between layers as the binding energies of Hf4f, Si2p, and O1s core level peaks and the valence band maximum of HfO2 do not change and the interfacial SiO2 does not increase.

  10. CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Said-Bacar, Z., E-mail: zabardjade@yahoo.fr [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Prathap, P. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Cayron, C. [CEA, LITEN, DEHT, Minatec, 17 rue des Martyrs, 38054 Cedex 9 (France); Mermet, F. [IREPA LASER, Pole API - Parc d' Innovation, 67400 Illkirch (France); Leroy, Y.; Antoni, F.; Slaoui, A.; Fogarassy, E. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer The effect of hydrogen in CW laser crystallization of hydrogenated amorphous silicon thin films has been investigated. Black-Right-Pointing-Pointer Large hydrogen content results in decohesion of the films due to hydrogen effusion. Black-Right-Pointing-Pointer Very low hydrogen content or hydrogen free amorphous silicon film are suitable for crystallization induced by CW laser. Black-Right-Pointing-Pointer Grains of size between 20 and 100 {mu}m in width and about 200 {mu}m in long in scanning direction are obtained with these latter films. - Abstract: This work presents the Continuous Wave (CW) laser crystallization of thin amorphous silicon (a-Si) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Electron Beam Evaporation (EBE) on low cost glass substrate. The films are characterized by Elastic Recoil Detection Analysis (ERDA) and by Fourier-Transform Infrared (FTIR) spectroscopy to evaluate the hydrogen content. Analysis shows that the PECVD films contain a high hydrogen concentration ({approx}10 at.%) while the EBE films are almost hydrogen-free. It is found that the hydrogen is in a bonding configuration with the a-Si network and in a free form, requiring a long thermal annealing for exodiffusion before the laser treatment to avoid explosive effusion. The CW laser crystallization process of the amorphous silicon films was operated in liquid phase regime. We show by Electron Backscatter Diffraction (EBSD) that polysilicon films with large grains can be obtained with EBE as well as for the PECVD amorphous silicon provided that for the latest the hydrogen content is lower than 2 at.%.

  11. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    Science.gov (United States)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  12. Growth parameter enhancement for MoS{sub 2} thin films synthesized by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Serna, Martha I.; Higgins, Marissa; Quevedo-Lopez, Manuel A. [Materials Science and Engineering Department, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States); Moreno, Salvador [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Choi, Hyunjoo [Department of Advanced Materials Engineering, Kookmin University, Jeongneung-dong Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Minary-Jolandan, Majid [Department of Mechanical Engineering, The University of Texas at Dallas, Richardson, TX 75080 (United States); Alan MacDiarmid Nanotech Institute, The University of Texas at Dallas, 800 W Campbell Road RL 10, Richardson TX 75080 (United States)

    2016-12-15

    Two-dimensional materials such as graphene and MoS{sub 2} have been the main focus of intense research efforts over the past few years. The most common method of exfoliating these materials, although efficient for lab-scale experiments, is not acceptable for large area and practical applications. Here, we report the deposition of MoS{sub 2} layered films on amorphous (SiO{sub 2}) and crystalline substrates (sapphire) using a pulsed laser deposition (PLD) method. Increased substrate temperature (∝700 C) and laser energy density (>530 mJ /cm{sup 2}) promotes crystalline MoS{sub 2} films < 20 nm, as demonstrated by fast Fourier transform (FFT) and transmission electron microscopy (TEM). The method reported here opens the possibility for large area layered MoS{sub 2} films by using a laser ablation processes. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Abnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD

    Institute of Scientific and Technical Information of China (English)

    LI Jun-Shuai; YIN Min; WANG Jin-Xiao; HE De-Yan

    2005-01-01

    @@ Silicon thin films are deposited by inductively coupled plasma chemical vapour deposition (ICP-CVD) at a low temperature of 350℃ using a mixture of SiH4 and H2. The structures of the films are characterized by x-ray diffraction and Raman spectra. Under the optimum experimental conditions, we observe that the crystallinity of Si films becomes more excellent and the preferred orientation changes from (111) to (220) with the decreasing dilution of SiH4 in H2. Such an abnormal crystallization is tentatively interpreted in term of the high density,low electron temperature and spatial confinement of the plasma in the process of ICP-CVD.

  14. Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Wan-bing; YU Wei; WU Li-ping; CUI Shuang-kui; FU Guang-sheng

    2006-01-01

    Hydrogenated nanocrystalline silicon carbide (SiC) thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy (AFM), the Fourier transform infrared absorption (FTIR) and the transmission electron microscopy (TEM). The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC (approximately 5.4 nm), and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

  15. Optimization study of the femtosecond laser-induced forward-transfer process with thin aluminum films.

    Science.gov (United States)

    Bera, Sudipta; Sabbah, A J; Yarbrough, J M; Allen, C G; Winters, Beau; Durfee, Charles G; Squier, Jeff A

    2007-07-20

    The parameters for an effective laser-induced forward-transfer (LIFT) process of aluminum thin films using a femtosecond laser are studied. Deposited feature size as a function of laser fluence, donor film thickness, quality of focus, and the pulse duration are varied, providing a metric of the most desirable conditions for femtosecond LIFT with thin aluminum films.

  16. Deposition and Tribological Properties of Sulfur-Doped DLC Films Deposited by PBII Method

    Directory of Open Access Journals (Sweden)

    Nutthanun Moolsradoo

    2010-01-01

    Full Text Available Sulfur-doped diamond-like carbon films (S-DLC fabricated from C2H2 and SF6 mixtures were used to study the effects of sulfur content and negative pulse bias voltage on the deposition and tribological properties of films prepared by plasma-based ion implantation (PBII. The structure and relative concentration of the films were analyzed by Raman spectroscopy and Auger electron spectroscopy. Hardness and elastic modulus of films were measured by nanoindentation hardness testing. Tribological characteristics of films were performed using a ball-on-disk friction tester. The results indicate that with the increasing sulfur content, the hardness and elastic modulus decrease. Additionally, by changing the negative pulse bias voltage from 0 kV to −5 kV, the hardness and elastic modulus increase, while the friction coefficient and specific wear rate tends to decrease. Moreover, at a negative pulse bias voltage of −5 kV and flow-rate ratio of 1 : 2, there is considerable improvement in friction coefficient of 0.05 under ambient air is due to the formation of a transfer films on the interface. The decrease in the friction coefficient of films doped with 4.9 at.% sulfur is greater under high vacuum (0.03 than under ambient air (>0.1.

  17. Superhydrophobic polymer films via aerosol assisted deposition - Taking a leaf out of nature's book

    Energy Technology Data Exchange (ETDEWEB)

    Crick, Colin R. [Materials Chemistry Research Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H OAJ (United Kingdom); Parkin, Ivan P., E-mail: i.p.parkin@ucl.ac.u [Materials Chemistry Research Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H OAJ (United Kingdom)

    2010-05-31

    Aerosol assisted deposition of three sets of polymer films based on commercially available resins was achieved on various substrates. The films were characterised using a range of methods, including water contact and slip angle to determine water repellent properties. The aerosol assisted deposition inside the chemical vapour deposition reactor was unique in generating a highly rough superhydrophobic surface with water contact angles up to 170{sup o}. During the deposition process, two of the polymers were cured resulting in the development of high surface morphology. It was observed that the polymer that did not cure did not develop such a rough surface resulting in a lower water contact angle ({approx} 99{sup o}). The superhydrophobic films had a Cassie-Baxter type wetting with water failing to penetrate the surface porosity, water spraying on the surface would bounce off. These films had exceptionally low slide angles of ca 1-2{sup o} from the horizontal.

  18. Fabrication of ZnO nanoparticles-embedded hydrogenated diamond-like carbon films by electrochemical deposition technique

    Institute of Scientific and Technical Information of China (English)

    Zhang Pei-Zeng; Li Rui-Shan; Pan Xiao-Jun; Xie Er-Qing

    2013-01-01

    ZnO nanoparticles-embedded hydrogenated diamond-like carbon (ZnO-DLC) films have been prepared by electrochemical deposition in ambient conditions.The morphology,composition,and microstructure of the films have been investigated.The results show that the resultant films are hydrogenated diamond-like carbon films embedded with ZnO nanoparticles in wurtzite structure,and the content and size of the ZnO nanoparticles increase with increasing deposition voltage,which are confirmed by X-ray photoelectron spectroscopy (XPS),Raman,and transmission electron microscope (TEM).Furthermore,a possible mechanism used to describe the growth process of ZnO-DLC films by electrochemical deposition is also discussed.

  19. Dynamic scaling and optical properties of Zn(S, O,OH) thin film grown by chemical bath deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Yi; Li Bo-Yan; Dang Xiang-Yu; Wu Li; Jin Jing; Li Feng-Yan; Ao Jian-Ping; Sun Yun

    2011-01-01

    The scaling behavior and optical properties of Zn(S,O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements,scanning electron microscopy and optical properties measurement.From the scaling behaviour,the value of growth scaling exponent β,0.38±0.06,was determined.This value indicated that the Zn(S,O,OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect.Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions.The energy band gap of the film deposited with 40 min was around 3.63 eV.

  20. Process optimization of ultrasonic spray coating of polymer films

    DEFF Research Database (Denmark)

    Bose, Sanjukta; Keller, Stephan Sylvest; Boisen, Anja

    2013-01-01

    In this work we have performed a detailed study of the influence of various parameters on spray coating of polymer films. Our aim is to produce polymer films of uniform thickness (500 nm to 1 μm) and low roughness compared to the film thickness. The coatings are characterized with respect...... these two regimes, where we obtain a film of desired quality. Both with increasing nozzle-substrate distance and temperature, the deposition moves from a wet state to a dry regime. Similar results are also achieved for solvents with low boiling points. Finally, we study film formation during spray coating...... to thickness, roughness (profilometer), and morphology (optical microscopy). Polyvinylpyrrolidone (PVP) is used to do a full factorial design of experiments with selected process parameters such as temperature, distance between spray nozzle and substrate, and speed of the spray nozzle. A mathematical model...

  1. Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

    Science.gov (United States)

    Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

    2010-09-01

    We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

  2. In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

    Science.gov (United States)

    Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P. E.; Kear, B.; Gallois, B.

    1991-01-01

    Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

  3. In Situ deposition of YBCO high-T(sub c) superconducting thin films by MOCVD and PE-MOCVD

    Science.gov (United States)

    Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P.; Gallois, B.; Kear, B.

    1990-01-01

    Metalorganic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T( sub c) greater than 90 K and Jc approx. 10 to the 4th power A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

  4. Simulations of the Dependence of Gas Physical Parameters on Deposition Variables during HFCVD Diamond Films

    Institute of Scientific and Technical Information of China (English)

    Aiying WANG; Kwangryeol Lee; Chao SUN; Lishi WEN

    2006-01-01

    During the growth of the hot filament chemical vapor deposition(HFCVD)diamond films, numerical simulations in a 2-D mathematical model were employed to investigate the influence of various deposition parameters on the gas physical parameters, including the temperature, velocity and volume density of gas. It was found that, even in the case of optimized deposition parameters, the space distributions of gas parameters were heterogeneous due primarily to the thermal blockage come from the hot filaments and cryogenic pump effect arisen from the cold reactor wall. The distribution of volume density agreed well with the thermal round-flow phenomenon, one of the key obstacles to obtaining high growth rate in HFCVD process. In virtue of isothermal boundary with high temperature or adiabatic boundary condition of reactor wall, however, the thermal roundflow was profoundly reduced and as a consequence, the uniformity of gas physical parameters was considerably improved, as identified by the experimental films growth.

  5. Precise thin film synthesis by ion beam sputter deposition; Herstellung von Praezisionsschichten mittels Ionenstrahlsputtern

    Energy Technology Data Exchange (ETDEWEB)

    Gawlitza, P.; Braun, S.; Leson, A.; Lipfert, S. [Fraunhofer-Institut fuer Werkstoffphysik und Schichttechnologie (IWS), Dresden (Germany); Nestler, M. [Roth und Rau AG, Hohenstein-Ernstthal (Germany)

    2007-04-15

    Ion beam sputter deposition (IBSD) is a promising technique for the fabrication of high performance thin films because of the well defined and adjustable particle energies, which are rather high in comparison to other PVD techniques. Recent developments concerning long-term stability and lateral uniformity of the ion beam sources strengthen the position of the IBSD technique in the field of precise thin film synthesis. Furthermore, IBSD offers a