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Sample records for filled skutterudites rpt4ge12

  1. Dependence of the superconducting transition temperature of the filled skutterudite compound PrPt{sub 4}Ge{sub 12} on hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Foroozani, N. [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Hamlin, J.J. [Department of Physics, University of California, San Diego, La Jolla, CA 92093 (United States); Schilling, J.S., E-mail: jss@wuphys.wustl.edu [Department of Physics, Washington University, St. Louis, MO 63130 (United States); Baumbach, R.E.; Lum, I.K.; Shu, L.; Huang, K.; Maple, M.B. [Department of Physics, University of California, San Diego, La Jolla, CA 92093 (United States)

    2013-02-14

    Highlights: ► Superconductivity in the filled skutterudite PrPt{sub 4}Ge{sub 12}. ► Dependence of T{sub c} on purely hydrostatic pressure to 0.6 GPa. ► Comparison of lattice pressure to external pressure effects on superconductivity. ► Evidence for magnetic pair-breaking effects. -- Abstract: The temperature-dependent ac susceptibility of the filled skutterudite superconductor PrPt{sub 4}Ge{sub 12} has been measured under hydrostatic He-gas pressure to 0.58 GPa. The superconducting transition temperature T{sub c} decreases linearly with pressure P from 7.91 K at ambient pressure to 7.83 K at 0.58 GPa, giving the rate dT{sub c}/dP = −0.19 ± 0.03 K/GPa. Evidence is presented that suggests that the value of T{sub c} in this compound is slightly reduced due to magnetic pair-breaking effects from the Pr{sup 3+} cations.

  2. Structural, electronic, and thermal properties of indium-filled InxIr4Sb12 skutterudites

    Science.gov (United States)

    Wallace, M. K.; Li, Jun; Subramanian, M. A.

    2018-06-01

    The "phonon-glass/electron-crystal" approach has been implemented through incorporation of "rattlers" into skutterudite void sites to increase phonon scattering and thus increase the thermoelectric efficiency. Indium filled IrSb3 skutterudites are reported for the first time. Polycrystalline samples of InxIr4Sb12 (0 ≤ x ≤ 0.2) were prepared by solid-state reaction under a gas mixture of 5% H2 and 95% Ar. The solubility limit of InxIr4Sb12 was found to be close to 0.18. Synchrotron X-ray diffraction refinements reveal all InxIr4Sb12 phases crystallized in body-centered cubic structure (space group : Im 3 bar) with ∼8% antimony site vacancy and with indium partially occupying the 16f site. Unlike known rattler filled skutterudites, under synthetic conditions employed, indium filling in IrSb3 significantly increases the electrical resistivity and decreases the Seebeck coefficient (n-type) while reducing the thermal conductivity by ∼30%. The resultant power factor offsets the decrease in total thermal conductivity giving rise to a substantial decrease in ZT. Principal thermoelectric properties of InxM4Sb12 (M = Co, Rh, Ir) phases are compared. As iridium is a 5d transition metal, zero field cooled (ZFC) magnetization were performed to unravel the effect of spin-orbit interaction on the electronic properties. These results serve to advance the understanding of filled skutterudites, and provide additional insight on the less explored smaller "rattlers" and their influence on key thermoelectric properties.

  3. Specific heat of filled skutterudite PrOs4P12

    International Nuclear Information System (INIS)

    Matsuhira, Kazuyuki; Doi, Yoshihiro; Wakeshima, Makoto; Hinatsu, Yukio; Kihou, Kunihiro; Sekine, Chihiro; Shirotani, Ichimin

    2005-01-01

    We report the specific heat of filled skutterudite compounds PrOs 4 P 12 and LaOs 4 P 12 down to 1.8K. The specific heat divided by temperature C(T)/T in PrOs 4 P 12 shows a shoulder around 13K. This shoulder is caused by a Schottky anomaly due to a crystalline electric field effect. The electronic specific heat coefficients γ of PrOs 4 P 12 and LaOs 4 P 12 are estimated to be 56.5 and 21.6mJ/K 2 mol, respectively. The value of γ in PrOs 4 P 12 is 2.6 times larger than that in LaOs 4 P 12

  4. Electrical and thermal transport properties of Y bxCo4Sb12 filled skutterudites with ultrahigh carrier concentrations

    Directory of Open Access Journals (Sweden)

    Yulong Li

    2015-11-01

    Full Text Available For filled skutterudites, element Yb is one of the most common and important fillers. However, the optimal carrier concentration range in Y bxCo4Sb12 filled skutterudites has not been determined as a result of the low Yb filling fraction limit. In this study, a non-equilibrium fabrication process (MS-SPS process, consisting of a melt-spinning method and a spark plasma sintering technique, has been applied to prepare Y bxCo4Sb12 samples. The Yb filling fraction is successfully extended to 0.35, which provides the possibility to clarify the optimal carrier concentration range for Yb-filled skutterudites. High carrier concentrations, with a maximum of around 1 × 1021 cm−3, were achieved in the MS-SPS Y bxCo4Sb12 samples due to the significantly enhanced Yb filling fractions. The phase compositions, lattice parameters, electrical and thermal transport properties of the MS-SPS Y bxCo4Sb12 samples with high carrier concentrations were systematically investigated. An optimal carrier concentration range of around 5 ∼ 6 × 1020 cm−3, corresponding to the actual Yb filling fraction of around 0.21∼0.26, has been determined, which displays the highest thermoelectric performance in Y bxCo4Sb12 thermoelectric materials.

  5. Preparation and thermopower of new mischmetal-based partially filled skutterudites Mm yFe4-x(Co/Ni) xSb12

    International Nuclear Information System (INIS)

    Bourgoin, B.; Berardan, D.; Alleno, E.; Godart, C.; Rouleau, O.; Leroy, E.

    2005-01-01

    We report on sample preparation and electron probe microanalysis (EPMA) in the series Mm y Fe 4-x (Co/Ni) x Sb 12 with Mm being mischmetal. We show the possibility of preparing mischmetal-based partially filled skutterudites without any segregation of the rare-earths. Room temperature thermopower is similar in mischmetal-based skutterudites to cerium- or ytterbium-based partially filled skutterudites

  6. Neutron diffraction and thermoelectric properties of indium filled In{sub x}Co{sub 4}Sb{sub 12} (x = 0.05, 0.2) and indium cerium filled Ce{sub 0.05}In{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Sesselmann, Andreas [Institute of Materials Research, German Aerospace Center (DLR), Linder Hoehe, 51147 Koeln (Germany); Klobes, Benedikt [Juelich Centre for Neutron Science JCNS und Peter Gruenberg Institute PGI, JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Dasgupta, Titas [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Mumbai (India); Gourdon, Olivier [Los Alamos National Laboratory, LANSCE, Los Alamos, New Mexico 87545 (United States); Hermann, Raphael [Juelich Centre for Neutron Science JCNS und Peter Gruenberg Institute PGI, JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Faculte des Sciences, Universite de Liege, 4000 Liege (Belgium); Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Mueller, Eckhard [Institute of Materials Research, German Aerospace Center (DLR), Linder Hoehe, 51147 Koeln (Germany); Institute of Inorganic and Analytical Chemistry, Justus Liebig University, Heinrich-Buff-Ring 58, 35392 Giessen (Germany)

    2016-03-15

    The thermoelectric properties on polycrystalline single (In) and double filled (Ce, In) skutterudites are characterized between 300 and 700 K. Powder neutron diffraction measurements of the skutterudite compositions In{sub x}Co{sub 4}Sb{sub 12} (x = 0.05, 0.2) and Ce{sub 0.05}In{sub 0.1}Co{sub 4}Sb{sub 12} as a function of temperature (12-300 K) were carried out, which gives more insight into the structural data of single and double-filled skutterudites. Results show that due to the annealing treatment, a Sb deficiency is detectable and thus verifies defects at the Sb lattice site of the skutterudite. Furthermore, we show by electron microprobe analysis that a considerable amount of indium is lost during synthesis and post-processing for the single indium filled samples, but not for the double cerium and indium skutterudite sample. In our experiments, the double-filled skutterudite is superior to the single-filled skutterudite composition due to a higher charge carrier density, a comparable lattice thermal resistivity, and a higher density of states effective mass. Furthermore, we obtained a significantly higher Einstein temperature for the double-filled skutterudite composition in comparison to the single-filled species, which reflects the high sensitivity due to filling of the void lattice position within the skutterudite crystal. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Exotic behaviours in the Pr-based filled skutterudites

    International Nuclear Information System (INIS)

    Sato, H; Sugawara, H; Namiki, T; Saha, S R; Osaki, S; Matsuda, T D; Aoki, Y; Inada, Y; Shishido, H; Settai, R; Onuki, Y

    2003-01-01

    The exotic features of the Pr-based filled skutterudites are reviewed based on the electronic transport properties, specific heat and de Haas-van Alphen experiments, putting the emphasis on PrFe 4 P 12 and PrOs 4 Sb 12 . As references, the experiments on the related La- and Ce-filled skutterudites are also examined and discussed. Compared to their La reference compounds, the Fermi surface is very similar in PrOs 4 Sb 12 , suggesting the well localized character of 4f electrons, while it looks largely different in PrFe 4 P 12 . For the cyclotron effective mass, both PrFe 4 P 12 and PrOs 4 Sb 12 exhibit a strong enhancement, in reasonable agreement with the large specific heat coefficient

  8. NMR study of partially filled skutterudites AxCo4Sb12 (A = Yb, Ba, Sr, Ca) and BaxYbyCo4Sb12.

    Science.gov (United States)

    Tian, Yefan; Sirusi, Ali; Ross, Joseph; Ballikaya, Sedat; Uher, Ctirad; Chen, Yuqi; Sekine, Chihiro

    Partially filled Co-Sb skutterudites have been of considerable interest as thermoelectric materials, particularly with multiple filling for which high ZT values can be obtained. This is due in part to control of phonon thermal conductivity, but also the change in composition leads to subtle changes in electronic behavior as well as magnetism due both to rare earth filler atoms and to native defects. We measured 59Co NMR on several partially filled AxCo4Sb12 skutterudites in order to investigate such behavior. From the T-dependent NMR shifts along with T1 relaxation times we can separate metallic shift contributions from those due to local moments. We compare the results to predicted band-edge behavior with multiple minima, and the estimated g factors, by matching this behavior to transport measurements. Also the behavior of Yb-filled samples provides an estimate of the conduction band mediation of the magnetic response, and we also find magnetic shifts in Ba-doped skutterudite which we address in terms of Co mixed-valence behavior. This work was supported by the Robert A. Welch Foundation, Grant No. A-1526. Synthesis work was partly supported by the Center for Solar and Thermal Energy Conversion and a Grant-in-Aid for Scientific Research (B) (No. 23340092) from the Japan Society.

  9. 121Sb-NMR study of filled skutterudite CeOs4Sb12

    International Nuclear Information System (INIS)

    Yogi, M.; Niki, H.; Mukuda, H.; Kitaoka, Y.; Sugawara, H.; Sato, H.

    2007-01-01

    121 Sb nuclear magnetic resonance (NMR) of filled skutterudite compound CeOs 4 Sb 12 has been carried out to investigate a spin fluctuation below T∼25K. In spite of a powdered sample, many sharp peaks, similar to a data for single crystal, were observed because of an orientation of the sample from the anisotropy of the magnetization. A numerical calculation well reproduces resonance fields for Sb(1) sites with H parallel V zz . The nuclear spin-lattice relaxation rate divided by temperature 1/T 1 T shows continuous decrease with increasing magnetic field, indicating a suppression of the spin fluctuation by the field

  10. Alkaline earth filled nickel skutterudite antimonide thermoelectrics

    Science.gov (United States)

    Singh, David Joseph

    2013-07-16

    A thermoelectric material including a body centered cubic filled skutterudite having the formula A.sub.xFe.sub.yNi.sub.zSb.sub.12, where A is an alkaline earth element, x is no more than approximately 1.0, and the sum of y and z is approximately equal to 4.0. The alkaline earth element includes guest atoms selected from the group consisting of Be, Mb, Ca, Sr, Ba, Ra and combinations thereof. The filled skutterudite is shown to have properties suitable for a wide variety of thermoelectric applications.

  11. Magnetic properties of the filled skutterudite-type structure compounds GdRu4P12 and TbRu4P12 synthesized under high pressure

    OpenAIRE

    Sekine, C; Uchiumi, T; Shirotani, I; Matsuhira, kazuyuki; Sakakibara, T; Goto, T; Yagi, T

    2000-01-01

    We have succeeded in synthesizing filled skutterudite-type structure compounds GdRu4P12 and TbRu4P12 under high pressure. The magnetic properties of GdRu4P12 and TbRu4P12 have been studied by means of electrical resistivity, magnetic susceptibility, and magnetization measurements. Magnetic experiments suggest that the Gd and Tb ions in the compounds have trivalent state. The compound GdRu4P12 displays features that suggest the occurrence of antiferromagnetic ordering below TN=22 K. In TbRu4P1...

  12. High-Pressure Synthesis, Structure, and Magnetic Properties of Ge-Substituted Filled Skutterudite Compounds; LnxCo4Sb12−yGey, Ln = La, Ce, Pr, and Nd

    Directory of Open Access Journals (Sweden)

    Hiroshi Fukuoka

    2017-12-01

    Full Text Available A series of new Ge-substituted skutterudite compounds with the general composition of LnxCo4Sb12−yGey, where Ln = La, Ce, Pr, and Nd, is prepared by high-pressure and high-temperature reactions at 7 GPa and 800 °C. They have a cubic unit cell and the lattice constant for each compound is 8.9504 (3, 8.94481 (6, 8.9458 (3, and 8.9509 (4 Å for the La, Ce, Pr, and Nd derivatives, respectively. Their chemical compositions, determined by electron prove microanalysis, are La0.57Co4Sb10.1Ge2.38, Ce0.99Co4Sb9.65Ge2.51, Pr0.97Co4Sb9.52Ge2.61, and Nd0.87Co4Sb9.94Ge2.28. Their structural parameters are refined by Rietveld analysis. The guest atom size does not affect the unit cell volume. The Co–Sb/Ge distance mainly determines the unit cell size as well as the size of guest atom site. The valence state of lanthanide ions is 3+.

  13. NMR study of magnetic properties in filled skutterudite compound EuRu4P12

    International Nuclear Information System (INIS)

    Magishi, Ko-ichi; Iwahashi, Yoshinori; Horimoto, Takuji; Sugawara, Hitoshi; Saito, Takahito; Koyama, Kuniyuki

    2007-01-01

    We report the results of 31 P NMR measurements on a Eu-based filled skutterudite phosphide EuRu 4 P 12 with ferromagnetic transition at T C =18K in order to investigate the magnetic properties from a microscopic point of view. The temperature dependence of the Knight shift is similar to that of the magnetic susceptibility. Also, the nuclear spin-lattice relaxation rate 1/T 1 is practically constant at higher temperatures above 50K due to the interaction of the 31 P nucleus with fluctuating local moments at the Eu 2+ sites, but decreases rapidly at low temperatures below T C , indicating the supression of the spin fluctuations by magnetic ordering

  14. The structure of filled skutterudites and the local vibration behavior of the filling atom

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Xiaojuan [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Dongguan Institute of Neutron Science, Dongguan 523808 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zong, Peng-an [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Chen, Xihong [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Tao, Juzhou, E-mail: taoj@ihep.ac.cn [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Dongguan Institute of Neutron Science, Dongguan 523808 (China); Lin, He, E-mail: linhe@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Science, Shanghai 201204 (China)

    2017-02-15

    Both of atomic pair distribution function (PDF) and extended x-ray absorption fine structure (EXAFS) experiments have been carried out on unfilled and Yb-filled skutterudites Yb{sub x}Co{sub 4}Sb{sub 12} (x=0, 0.15, 0.2 and 0.25) samples. The structure refinements on PDF data confirm the large amplitude vibration of Yb atom and the dependence of Yb vibration amplitude on the filling content. Temperature dependent EXAFS experiment on filled skutterudites have been carried out at Yb L{sub Ⅲ}-edge in order to explore the local vibration behavior of filled atom. EXAFS experiments show that the Einstein temperature of the filled atom is very low (70.9 K) which agrees with the rattling behavior.

  15. Magnetic properties of Sm-based filled skutterudite phosphides

    Energy Technology Data Exchange (ETDEWEB)

    Giri, R.; Sekine, C.; Shimaya, Y.; Shirotani, I.; Matsuhira, K.; Doi, Y.; Hinatsu, Y.; Yokoyama, M.; Amitsuka, H

    2003-05-01

    Filled skutterudites SmFe{sub 4}P{sub 12} and SmOs{sub 4}P{sub 12} have been prepared at high temperature and high pressure. The temperature dependence of electrical resistivity in both compounds shows metallic behavior. The magnetic susceptibility and specific heat measurements indicate that SmFe{sub 4}P{sub 12} shows a ferromagnetic ordering at 1.5 K, whereas SmOs{sub 4}P{sub 12} is an antiferromagnet with a T{sub N} of 4.6 K.

  16. Preparation and chemical properties of the skutterudites (Ce-Yb) yFe4-x(Co/Ni) xSb12

    International Nuclear Information System (INIS)

    Berardan, D.; Alleno, E.; Godart, C.; Rouleau, O.; Rodriguez-Carvajal, J.

    2005-01-01

    The double-filled skutterudites Ce y/2 Yb y/2 Fe 4-x Co x Sb 12 and Ce y/2 Yb y/2 Fe 4-x Ni x Sb 12 have been synthesized as single phase materials. The evolution of the lattice parameters and of the filling fractions with substitutions on the transition metal site have been studied by X-ray diffraction and electron probe microanalysis, respectively. Both results were compared to that of single filled series (Ce/Yb) y Fe 4-x (Co/Ni) x Sb 12 . It shows that double-filled skutterudites can be understood as a solid solution between single filled ones. The valence states of Ce and Yb in all series have been studied using X-ray absorption spectroscopy at the L 3 edges, and we discuss their relationships with structural parameters. Ce is always trivalent, whereas Yb valence state decreases as Yb fraction increases. No distortion of the environment or sub-position of Yb in the cage have been seen by neutron diffraction. The Seebeck coefficient has been measured using a home made apparatus from 120 K to 300 K. It shows a crossover from p- to n-type conductivity for Co or Ni rich skutterudites in the six series. We discuss the influence on the room temperature thermopower of valence states, filling fractions and substitution rate on the transition metal site. Thermopower seems to be only driven by charge carriers concentration

  17. Improved thermoelectric performance of n-type Ca and Ca-Ce filled skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, Daniel R.; Liu, Chang; Ellison, Nicole D. [Optimal CAE, Plymouth, Michigan 48170 (United States); Salvador, James R.; Meyer, Martin S.; Haddad, Daad B. [General Motors Research and Development, Warren, Michigan 48090 (United States); Wang, Hsin; Cai, W. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2014-12-28

    Thermoelectric (TE) technology for use in automotive waste heat recovery is being advanced by General Motors with support from the US Department of Energy. Skutterudites are a very promising material for this application of TE technology due to their superior mechanical properties and good TE performance. Double-filled Yb{sub x}Ba{sub y}Co{sub 4}Sb{sub 12} with ZT values around 1.1 at 750 K are the best performing n-type skutterudites produced on a large scale using an economically viable approach of melt spinning (MS) in conjunction with spark plasma sintering (SPS). Another economical production method on the tons scale, the melt quench annealing (MQA) technique, has been recently claimed by Treibacher Industrie AG, further information is available [G. Rogl et al., Acta Mater. 76, 434–448 (2014)]. A possible hurdle to commercial implementation of these materials is the use of rare earths as the fillers to reduce thermal conductivity and improve the electrical transport properties. It will be shown herein that skutterudites double-filled with Ca and Ce, both of which are lower-cost fillers, display markedly different TE properties depending on whether they are produced by MQA or MS + SPS synthesis techniques. Ca and Ce double-filled skutterudites prepared by MS + SPS have TE properties that are superior to the same compositions prepared by MQA and that are comparable to the best performing Yb and Ba filled materials. Furthermore, the results of this study suggest that the unusually poor transport properties of MQA Ca-filled skutterudites can be ascribed to deleterious secondary phases, which is contrary to reports in the literature attempting to explain these irregularities via band structure features.

  18. Magnetic properties in the vortex state of Pr1-xNdxPt4Ge12 and PrPt3.88Fe0.12Ge12 superconductors

    Science.gov (United States)

    Chandra, L. S. Sharath; Chattopadhyay, M. K.

    2018-03-01

    We report the temperature and magnetic field dependence of magnetization of Pr1-xNdxPt4Ge12 (x = 0, 0.05 and 0.1) and PrPt3.88Fe0.12Ge12 below 10 K and up to 2 T magnetic field. When compared to the parent PrPt4Ge12, while the critical current density and flux pinning properties are enhanced in the Pr1-xNdxPt4Ge12 samples, they are considerably diminished in the PrPt3.88Fe0.12Ge12 sample. We argue that the observed changes are related to the way the substituting atoms at different crystallographic sites influence the superconductivity in these Germanide skutterudites.

  19. Electronic structure and thermoelectricity of filled skutterudite CeRu{sub 4}Sb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, A., E-mail: amitshan2009@gmail.com [Department of Physics, University of North Bengal, Darjeeling, 734013 (India); Rai, D.P. [Department of Physics, Pachhunga University College, Aizawl, 796001 (India); Sandeep [Condensed Matter Theory Research Group, Department of Physics, Mizoram University, Aizawl, 796004 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 (Algeria); Thapa, R.K. [Condensed Matter Theory Research Group, Department of Physics, Mizoram University, Aizawl, 796004 (India); Mandal, P.K. [Department of Physics, University of North Bengal, Darjeeling, 734013 (India)

    2016-07-05

    First-principles calculations of the energy band structure and density of states of filled skutterudite CeRu{sub 4}Sb{sub 12} have been performed to understand the origin of thermoelectricity. The calculations are carried out using the full potential linear augmented plane wave (FP-LAPW) method within a framework of LDA approach. CeRu{sub 4}Sb{sub 12} is a metal with bands crossing Fermi energy level more than twice with indirect energy band gap of ∼0.09 eV above the Fermi energy level. The study of the elastic properties suggests the ductile nature of the material with covalent contribution in the atomic bonding. Our calculations performed for the density of electronic states near the Fermi energy level show that the large thermo-power at room temperature originates from the hybridized Ru-d and Sb-p orbitals. The study of the thermal transport properties suggests the high value of Seebeck coefficient with figure of merit (ZT) = 0.12, which is consistent to the values obtained for the analogous compounds. - Highlights: • CeRu{sub 4}Sb{sub 12} is ductile material with covalent contribution in bonding. • An indirect energy bandgap of 0.09 eV is present above the Fermi energy level. • The crossing of E{sub F} by the energy bands increases the number of DOS at E{sub F}. • Fermi level is situated within the valence region. • The thermal efficiency of the material is 0.12 at room temperature.

  20. Transport properties of partially-filled Ce{sub y}Co{sub 4}Sb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Uher, C; Chen, B; Hu, S; Morelli, D T; Meisner, G P

    1997-07-01

    The authors have investigated the magnetic and transport properties of Ce{sub y}Co{sub 4}Sb{sub 12} filled skutterudites with the filling fraction y {le} 0.1. These compounds are n-type materials that develop a magnetic moment upon the presence of trivalent cerium. Cerium has a strong influence on all transport properties and even in small amounts it drastically reduces the lattice thermal conductivity. The resulting figures of merit are comparable to the values established previously for the p-type filled skutterudites.

  1. Charge fluctuation in Ce-based filled-skutterudite

    International Nuclear Information System (INIS)

    Yogi, M; Niki, H; Mukuda, H; Kitaoka, Y; Sugawara, H; Sato, H

    2009-01-01

    We carried out 121,123 Sb nuclear quadrupole resonance (NQR) measurement on CeOs 4 Sb 12 to investigate an anomaly observed in ReOs 4 Sb 12 . The full width of half maximum of the NQR spectrum shows a step-like increase at 115 K with decreasing temperature (T). The nuclear spin-spin relaxation rate 1/T 2 also shows a divergence at the same T. These results are considered to be caused by a distribution of the electric field gradient (EFG) and its fluctuation, which might arise from a small deformation of the cage which consists of twelve Sb. It is considered that the anomaly observed in ReOs 4 Sb 12 at T ∼ 120 K is originated from an unique crystal structure of the filled skutterudite.

  2. Novel strongly correlated electron states in filled skutterudite lanthanide osmium antimonides

    International Nuclear Information System (INIS)

    Maple, M.B.; Frederick, N.A.; Ho, P.-C.; Yuhasz, W.M.; Sayles, T.A.; Butch, N.P.; Jeffries, J.R.; Taylor, B.J.

    2005-01-01

    Recent measurements on the filled skutterudite compounds Pr(Os 1-x Ru x ) 4 Sb 12 , NdOs 4 Sb 12 , and SmOs 4 Sb 12 are discussed. Pr(Os 1-x Ru x ) 4 Sb 12 displays superconductivity for all values of x with a minimum at x=0.6, and only the compounds with x 4 Sb 12 and the BCS superconductivity of PrRu 4 Sb 12 . NdOs 4 Sb 12 is a heavy fermion ferromagnet, with a sharp transition observed at 1.0K. SmOs 4 Sb 12 is also a heavy fermion material, and it may display weak ferromagnetic behavior below 2.6K

  3. Structural, electronic and magnetic properties of Pr-based filled skutterudites: A first principle study

    Science.gov (United States)

    Yadav, Priya; Nautiyal, Shashank; Verma, U. P.

    2018-04-01

    Ternary skutterudites materials exhibit good electronic properties due to the unpaired d- and f- electrons of the transition and rare-earth metals, respectively. In this communication, we have performed the structural optimization of Pr-based filled skutterudite (PrCo4P12) for the first time and obtained the electronic band structure, density of states and magnetic moments by using the full-potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT). Our obtained magnetic moment of PrCo4P12 is ˜ 1.8 µB in which main contribution is due to Pr atom. Behavior of this material is metallic and it is most stable in body centered cubic (BCC) structure.

  4. Synthesis, crystal structure, and transport properties of Fe substituted rhombohedral skutterudite derivatives Co4−xFexGe6Se6

    KAUST Repository

    Wei, Kaya

    2014-11-01

    We report on the synthesis and low temperature transport properties of rhombohedral derivatives of the cubic skutterudite CoSb3, namely Co4-xFexGe6Se6 with x = 0, 1, 1.5. Rietveld refinement and elemental analyses were used to identify the structure and stoichiometry of the compositions. The thermal conductivity was investigated by employing the Debye model with different phonon-scattering parameters. This investigation demonstrates that Fe substitution is feasible in these skutterudite derivatives and can significantly affect the transport properties as compared with Co4Ge6Se6. © 2014 Elsevier B.V. All rights reserved.

  5. Synthesis, crystal structure, and transport properties of Fe substituted rhombohedral skutterudite derivatives Co4−xFexGe6Se6

    KAUST Repository

    Wei, Kaya; Dong, Yongkwan; Puneet, Pooja; Tritt, Terry M.; Nolas, George S.

    2014-01-01

    We report on the synthesis and low temperature transport properties of rhombohedral derivatives of the cubic skutterudite CoSb3, namely Co4-xFexGe6Se6 with x = 0, 1, 1.5. Rietveld refinement and elemental analyses were used to identify the structure and stoichiometry of the compositions. The thermal conductivity was investigated by employing the Debye model with different phonon-scattering parameters. This investigation demonstrates that Fe substitution is feasible in these skutterudite derivatives and can significantly affect the transport properties as compared with Co4Ge6Se6. © 2014 Elsevier B.V. All rights reserved.

  6. Preparation and thermoelectric properties of p-Type PrzFe4-xCoxSb12 skutterudites

    International Nuclear Information System (INIS)

    Shin, Dong-Kil; Kim, Il-Ho

    2014-01-01

    p-Type Pr z Fe 4-x Co x Sb 12 (z = 0.8, 1.0 and x = 0, 0.5, 1.0) skutterudites were synthesized by encapsulated melting and annealing and were consolidated with hot pressing. The effects of Pr filling and Co substitution for Fe (charge compensation) on the transport and the thermoelectric properties were examined. A few secondary phases, such as Sb and FeSb 2 , were formed together with the skutterudite phase, but the formation was suppressed with increasing Pr and Co contents. We confirmed that Pr filled in the voids and that Co was substituted for Fe in all specimens because the lattice constant increased with increasing Pr content and decreased with increasing Co content. The electrical conductivity decreased slightly with increasing temperature, showing degenerate semiconductor characteristics. The Hall and the Seebeck coefficients showed positive signs, indicating that the major carriers were holes (p-type conduction). The electrical conductivity and the thermal conductivity were decreased due to a decrease in the carrier concentration with increasing Pr and Co contents. As a result, the dimensionless figure of merit, ZT, was improved by Pr filling and Co substitution, and a maximum ZT = 0.89 was obtained at 723 K for Pr 0.8 Fe 3 CoSb 12 .

  7. Enhancement of thermoelectric efficiency of CoSb3-based skutterudites by double filling with K and Tl

    Directory of Open Access Journals (Sweden)

    Ken eKurosaki

    2014-10-01

    Full Text Available The high-temperature thermoelectric properties of thallium (Tl and potassium (K double-filled cobalt antimonide (CoSb3-based skutterudites with nominal compositions TlxK0.3Co4Sb12 (x = 0.1–0.3 were investigated. The filling fraction of Tl in CoSb3 was enhanced by co-filling with K, which resulted in all of the samples showing the filled-skutterudite single phase. Owing to the high filling ratio, the carrier concentration in the sample with x = 0.3 was as high as 4.3 × 1020 cm−3 at room temperature. Furthermore, quite low lattice thermal conductivity (as low as 0.9 W m−1 K−1 was obtained for the sample with x = 0.3, probably because of strong phonon scattering by the Tl and K co-rattling effect, which resulted in a maximum zT of around one at 773 K.

  8. Filled skutterudite antimonides: Validation of the electron-crystal phonon-glass approach to new thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Mandrus, D; Sales, B C; Keppens, V [and others

    1997-07-01

    After a brief review of the transport and thermoelectric properties of filled skutterudite antimonides, the authors present resonant ultrasound, specific heat, and inelastic neutron scattering results that establish the existence of two low-energy vibrational modes in the filled skutterudite LaFe{sub 3}CoSb{sub 12}. It is likely that at least one of these modes represents the localized, incoherent vibrations of the La ion in an oversized atomic cage. These results support the usefulness of weakly bound, rattling ions for the improvement of thermoelectric performance.

  9. The filled skutterudite PrOs4Sb12: superconductivity and correlations

    International Nuclear Information System (INIS)

    Measson, M.A.

    2005-12-01

    The filled skutterudite PrOs 4 Sb 12 is the first Pr-based heavy fermion superconductor. This thesis addresses several important open questions including the determination of the quasi-particle mass renormalisation, the nature and mechanism of superconductivity, and the intrinsic or extrinsic nature of the double superconducting transition seen in the specific heat. A fit of the specific heat with magnetic interactions between the ions Pr is proposed. We extract from it an electronic term of between 300-750 mJ/K 2 .mol(Pr). Analysis of the specific heat jump provides evidence that heavy carriers are involved in Cooper pairing and that superconductivity is strongly coupled. Extensive characterizations by specific heat, resistivity, susceptibility measurements show that a double transition appears in the best samples. Nevertheless we bring the first serious doubts on the intrinsic nature of the double transition, because we have found samples with a single sharp transition at Tc2 and because the ratio of the two specific heat jumps shows strong dispersion among the samples. Furthermore we have measured the superconducting phase diagrams with an A.C. specific heat technique under magnetic field and under pressure up to 4.2 GPa, and we show that the two transitions, Tc1 and Tc2, exhibit similar behaviours with magnetic field and pressure. We find a strong change in the pressure dependence of Tc's above 2 GPa which might be related to a change in the nature of the superconductivity under pressure (at least partially mediated by fluctuations and only by phonons at respectively low and high pressure) which may be linked to the increase of the crystal field gap of the Pr ions. Analysis of the upper critical field shows the presence of at least two superconducting bands and concludes to a singlet nature of the pairing. A strong distortion of the flux-line lattice, which is constant with temperature and field, is obtained by small angle neutron scattering measurement

  10. FP-LAPW calculations of the elastic, electronic and thermoelectric properties of the filled skutterudite CeRu4Sb12

    International Nuclear Information System (INIS)

    Shankar, A.; Rai, D.P.; Chettri, Sandeep; Khenata, R.; Thapa, R.K.

    2016-01-01

    We have investigated the electronic structure, elastic and thermoelectric properties of the filled skutterudite CeRu 4 Sb 12 using the density functional theory (DFT). The full potential linearized augmented plane wave (FP-LAPW) method within a framework of the generalized gradient approximation (GGA) approach is used to perform the calculations presented here. The electronic structure calculation suggests an indirect band gap semiconducting nature of the material with energy band gap of 0.08 eV. The analysis of the elastic constants at relaxed positions reveals the ductile nature of the sample material with covalent contribution in the inter-atomic bonding. The narrow band gap semiconducting nature with high value of Seebeck coefficient suggests the possibility of the thermoelectric application of the material. The analysis of the thermal transport properties confirms the result obtained from the energy band structure of the material with high thermopower and dimensionless figure of merit 0.19 at room temperature.

  11. Local structure investigation of Ga and Yb dopants in Co4Sb12 skutterudites

    Science.gov (United States)

    Hu, Yanyun; Chen, Ning; Clancy, J. P.; Salvador, James R.; Kim, Chang-Yong; Shi, Xiaoya; Li, Qiang; Kim, Young-June

    2017-12-01

    We report comprehensive x-ray absorption spectroscopy studies at both the Ga K edge and Yb L2 edge to elucidate the local structure of Ga and Yb dopants in YbxGayCo4Sb12 . Our extended x-ray absorption fine structure (EXAFS) data confirm that Ga atoms occupy two crystallographic sites: one is the 24 g site replacing Sb, and the other is the 2 a site in the off-center void position. We find that the occupancy ratio of these two sites varies significantly as a function of the filling fraction of additional Yb, which exclusively occupies the 2 a on-center site. At low concentrations of Yb, Ga24 g and Ga2 a dopants coexist and they form a charge-compensated compound defect proposed by Qiu et al. [Adv. Funct. Mater. 23, 3194 (2013), 10.1002/adfm.201202571]. The Ga24 g occupancy increases gradually with increasing Yb concentration, and almost all Ga occupies the 24 g site for the highest Yb concentration studied (x =0.4 ). In addition to the local structural evidence provided by our EXAFS data, we also present x-ray absorption near-edge structure (XANES) spectra, which show a small Ga K -edge energy shift as a function of Yb concentration consistent with the change from predominantly Ga2 a to Ga24 g states. Our result suggests that the increased solubility of Yb in Yb-Ga co-doped Co4Sb12 skutterudites is due to the increased Ga24 g electron acceptor, and thus provides an important strategy to optimize the carrier concentration in partially filled skutterudites.

  12. Electronic band structure, magnetic, transport and thermodynamic properties of In-filled skutterudites InxCo4Sb12

    International Nuclear Information System (INIS)

    Leszczynski, J; Da Ros, V; Lenoir, B; Dauscher, A; Candolfi, C; Masschelein, P; Hejtmanek, J; Kutorasinski, K; Tobola, J; Smith, R I; Stiewe, C; Müller, E

    2013-01-01

    The thermoelectric and thermodynamic properties of polycrystalline In x Co 4 Sb 12 (0.0 ⩽ x ⩽ 0.26) skutterudites were investigated and analysed between 2 and 800 K by means of electrical resistivity, thermopower, thermal conductivity and specific heat measurements. Hall effect, sound velocity and thermal expansion measurements were also made in order to gain insights into the transport and elastic properties of these compounds. The impact of the In filling on the crystal structure as well as the thermal dynamics of the In atoms were tracked down to 4 K using powder neutron diffraction experiments. Analyses of the transport data were compared with the evolution of the electronic band structure with x determined theoretically within the Korringa–Kohn–Rostoker method with the coherent potential approximation. These calculations indicate that In gives rise to a remarkably large p-like density of states located at the conduction band edge. The electrical properties show typical trends of heavily doped semiconductors regardless of the In content. The thermal transport in CoSb 3 is strongly influenced by the presence of In in the voids of the crystal structure resulting in a drop in the lattice thermal conductivity values in the whole temperature range. The low value of the Grüneisen parameter suggests that this decrease mainly originates from enhanced mass-fluctuations and point-defect scattering mechanisms. The highest thermoelectric figure of merit ZT ∼ 1.0 at 750 K was achieved at the maximum In filling fraction, i.e. for x = 0.26. (paper)

  13. f-electron-nuclear hyperfine-coupled multiplets in the unconventional charge order phase of filled skutterudite PrRu4P12

    International Nuclear Information System (INIS)

    Aoki, Yuji; Namiki, Takahiro; Saha, Shanta R.; Sato, Hideyuki; Tayama, Takashi; Sakakibara, Toshiro; Shiina, Ryousuke; Shiba, Hiroyuki; Sugawara, Hitoshi

    2011-01-01

    The filled skutterudite PrRu 4 P 12 is known to undergo an unconventional charge order phase transition at 63 K, below which two sublattices with distinct f-electron crystalline-electric-field ground states are formed. In this paper, we study experimentally and theoretically the properties of the charge order phase at very low temperature, particularly focusing on the nature of the degenerate triplet ground state on one of the sublattices. First, we present experimental results of specific heat and magnetization measured with high quality single crystals. In spite of the absence of any symmetry breaking, the specific heat shows a peak structure at T p =0.30 K in zero field; it shifts to higher temperatures as the magnetic field is applied. In addition, the magnetization curve has a remarkable rounding below 1 T. Then, we study the origin of these experimental findings by considering the hyperfine interaction between 4f electron and nuclear spin. We demonstrate that the puzzling behaviors at low temperatures can be well accounted for by the formation of 4f-electron-nuclear hyperfine-coupled multiplets, the first thermodynamical observation of its kind. (author)

  14. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

    Energy Technology Data Exchange (ETDEWEB)

    Jie, Qing; Ren, Zhifeng; Chen, Gang

    2017-08-01

    Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

  15. FP-LAPW calculations of the elastic, electronic and thermoelectric properties of the filled skutterudite CeRu{sub 4}Sb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, A., E-mail: amitshan2009@gmail.com [Condensed Matter Theory Group, Department of Physics, Mizoram University, 796004 (India); Rai, D.P. [Department of Physics, Pachhunga University College, Aizawl 796001 (India); Chettri, Sandeep [Condensed Matter Theory Group, Department of Physics, Mizoram University, 796004 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 (Algeria); Thapa, R.K. [Condensed Matter Theory Group, Department of Physics, Mizoram University, 796004 (India)

    2016-08-15

    We have investigated the electronic structure, elastic and thermoelectric properties of the filled skutterudite CeRu{sub 4}Sb{sub 12} using the density functional theory (DFT). The full potential linearized augmented plane wave (FP-LAPW) method within a framework of the generalized gradient approximation (GGA) approach is used to perform the calculations presented here. The electronic structure calculation suggests an indirect band gap semiconducting nature of the material with energy band gap of 0.08 eV. The analysis of the elastic constants at relaxed positions reveals the ductile nature of the sample material with covalent contribution in the inter-atomic bonding. The narrow band gap semiconducting nature with high value of Seebeck coefficient suggests the possibility of the thermoelectric application of the material. The analysis of the thermal transport properties confirms the result obtained from the energy band structure of the material with high thermopower and dimensionless figure of merit 0.19 at room temperature.

  16. Crystal structure and high temperature transport properties of Yb-filled p-type skutterudites YbxCo2.5Fe1.5Sb12

    KAUST Repository

    Dong, Yongkwan

    2014-01-01

    Partially Yb-filled Fe substituted polycrystalline p-type skutterudites with nominal compositions YbxCo2.5Fe1.5Sb 12, with varying filler concentrations x, were synthesized by reacting the constituent elements and subsequent solid state annealing, followed by densification by hot-pressing. The compositions and filling fractions were confirmed with a combination of Rietveld refinement and elemental analysis. Their thermoelectric properties were evaluated from 300 to 800 K. The Seebeck coefficients for the specimens increase with increasing temperature and plateau at around 750 K. The thermal conductivity decreases with increasing Yb filling fraction, and bipolar conduction becomes evident and increases at elevated temperatures. A maximum ZT value of 0.8 was obtained at 750 K for Yb 0.47Co2.6Fe1.4Sb12. The thermoelectric properties and potential for further optimization are discussed in light of our results. © 2013 Elsevier Inc.

  17. Electronic and Transport Properties of LaNi4Sb12 Skutterudite: Modified Becke-Johnson Approach

    Science.gov (United States)

    Bhat, Tahir Mohiuddin; Singh, Srishti; Gupta, Dinesh C.

    2018-05-01

    We carried out an ab initio study of structural, electronic, thermodynamic, and thermoelectric properties of the lanthanum-filled skutterudite, LaNi4Sb12. Generalized gradient approximation and modified Becke-Johnson potentials were employed for the exchange-correlation potential. The electronic structure calculations display the metallic behavior of the compound. The alloy offers low lattice thermal conductivity along with a high Seebeck coefficient with a value of - 158 (μVK-1) at room temperature. The effect of high pressure and temperature on thermal properties like thermal expansion coefficient, heat capacity, and Grüneisen parameter are also investigated by means of a quasi-harmonic Debye model. The large Seebeck coefficient and high power factor exhibited by LaNi4Sb12 make it an attractive candidate for thermoelectric materials.

  18. High temperature thermoelectric properties of p-type skutterudites BaxYbyCo4-zFezSb12

    KAUST Repository

    Dong, Y.

    2012-01-01

    Several polycrystalline p-type skutterudites with compositions Ba xYb yCo 4-zFe zSb 12, with varying filler concentrations x and y, and z = 1 to 2, were synthesized by reacting the constituents and subsequent solid state annealing, followed by densification by hot-pressing. Their thermoelectric properties were evaluated from 300 to 820 K. The Yb filling fraction increased with Fe content while the amount of Fe substitution had little influence on the Ba filling fraction. High purity specimens were obtained when the Fe content was low. Bipolar conduction contributed to the thermal conductivity at elevated temperatures. A maximum ZT value of 0.7 was obtained at 750 K for the specimen with the highest Fe content and filling fraction. The potential for thermoelectric applications is also discussed. © 2012 American Institute of Physics.

  19. The filled skutterudite PrOs{sub 4}Sb{sub 12}: superconductivity and correlations; La skutterudite PrOs{sub 4}Sb{sub 12}: supraconductivite et correlations

    Energy Technology Data Exchange (ETDEWEB)

    Measson, M.A

    2005-12-15

    The filled skutterudite PrOs{sub 4}Sb{sub 12} is the first Pr-based heavy fermion superconductor. This thesis addresses several important open questions including the determination of the quasi-particle mass renormalisation, the nature and mechanism of superconductivity, and the intrinsic or extrinsic nature of the double superconducting transition seen in the specific heat. A fit of the specific heat with magnetic interactions between the ions Pr is proposed. We extract from it an electronic term of between 300-750 mJ/K{sup 2}.mol(Pr). Analysis of the specific heat jump provides evidence that heavy carriers are involved in Cooper pairing and that superconductivity is strongly coupled. Extensive characterizations by specific heat, resistivity, susceptibility measurements show that a double transition appears in the best samples. Nevertheless we bring the first serious doubts on the intrinsic nature of the double transition, because we have found samples with a single sharp transition at Tc2 and because the ratio of the two specific heat jumps shows strong dispersion among the samples. Furthermore we have measured the superconducting phase diagrams with an A.C. specific heat technique under magnetic field and under pressure up to 4.2 GPa, and we show that the two transitions, Tc1 and Tc2, exhibit similar behaviours with magnetic field and pressure. We find a strong change in the pressure dependence of Tc's above 2 GPa which might be related to a change in the nature of the superconductivity under pressure (at least partially mediated by fluctuations and only by phonons at respectively low and high pressure) which may be linked to the increase of the crystal field gap of the Pr ions. Analysis of the upper critical field shows the presence of at least two superconducting bands and concludes to a singlet nature of the pairing. A strong distortion of the flux-line lattice, which is constant with temperature and field, is obtained by small angle neutron scattering

  20. Influence of high energy β-radiation on thermoelectric performance of filled skutterudites compounds

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jikun, E-mail: jikunchen@seas.harvard.edu [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zha, Hao [Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Key Laboratory of Particle & Radiation Imaging, Tsinghua University, Ministry of Education, Beijing (China); Xia, Xugui; Qiu, Pengfei; Li, Yulong [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Chuanjing; Han, Yunsheng [Nuctech Company Limited, Beijing (China); Shi, Xun; Chen, Lidong [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Jin, Qingxiu [Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Key Laboratory of Particle & Radiation Imaging, Tsinghua University, Ministry of Education, Beijing (China); Chen, Huaibi, E-mail: chenhb@mail.tsinghua.edu.cn [Department of Engineering Physics, Tsinghua University, Beijing 100084 (China); Key Laboratory of Particle & Radiation Imaging, Tsinghua University, Ministry of Education, Beijing (China)

    2015-08-15

    Highlights: • Impact by MeV β-rays irradiation on skutterudite TE material was investigated. • Monte-Carlo simulation is used to simulate the deposited energy irradiations. • The high deposited energy does not change the TE performance. • The light irradiation does not show a significant impact on TE materials. - Abstract: The influence of MeV β-rays irradiation on the thermoelectric performance of n-type filled skutterudite material has been investigated using an electron accelerator. Using a Monte-Carlo simulation base on Fluka code, the deposited energy in the sample material from the irradiation is estimated, which shows a large power deposited around 50 W/mm. Nevertheless, the thermoelectric performances of the filled skutterudite samples are compared before and after irradiations. It indicates that the thermoelectric material will not be easily jeopardized by ‘light’ irradiations with energy lower than MeV range.

  1. Influence of high energy β-radiation on thermoelectric performance of filled skutterudites compounds

    International Nuclear Information System (INIS)

    Chen, Jikun; Zha, Hao; Xia, Xugui; Qiu, Pengfei; Li, Yulong; Wang, Chuanjing; Han, Yunsheng; Shi, Xun; Chen, Lidong; Jin, Qingxiu; Chen, Huaibi

    2015-01-01

    Highlights: • Impact by MeV β-rays irradiation on skutterudite TE material was investigated. • Monte-Carlo simulation is used to simulate the deposited energy irradiations. • The high deposited energy does not change the TE performance. • The light irradiation does not show a significant impact on TE materials. - Abstract: The influence of MeV β-rays irradiation on the thermoelectric performance of n-type filled skutterudite material has been investigated using an electron accelerator. Using a Monte-Carlo simulation base on Fluka code, the deposited energy in the sample material from the irradiation is estimated, which shows a large power deposited around 50 W/mm. Nevertheless, the thermoelectric performances of the filled skutterudite samples are compared before and after irradiations. It indicates that the thermoelectric material will not be easily jeopardized by ‘light’ irradiations with energy lower than MeV range

  2. Study of 5f electron based filled skutterudite compound EuFe{sub 4}Sb{sub 12}, a thermoelectric (TE) material: FP-LAPW method

    Energy Technology Data Exchange (ETDEWEB)

    Shankar, A., E-mail: amitshan2009@gmail.com [Department of Physics, Mizoram University, Aizawl 796004 (India); Rai, D.P., E-mail: dibyaprakashrai@gmail.com [Beijing Computational Science Research Center, 3 Heqing Road, Beijing 100084 (China); Khenata, R. [Laboratoire de Physique Quantique et de Modlisation Mathmatique (LPQ3M), Dpartement de Technologie, Universit de Mascara, 29000 Mascara (Algeria); Maibam, J. [Department of Physics, Assam University, Silchar 788011 (India); Sandeep, E-mail: sndp.chettri@gmail.com [Department of Physics, Mizoram University, Aizawl 796004 (India); Thapa, R.K., E-mail: r.k.thapa@gmail.com [Department of Physics, Mizoram University, Aizawl 796004 (India)

    2015-01-15

    Highlights: • The compound EuFe{sub 4}Sb{sub 12} shows a semi-metallic behavior with pseudo gap. • The inherent dense band near E{sub F} facilitate the charge carriers. • The magnetic moment within LSDA and mBJ are underestimated. • The inclusion of onsite Coulomb repulsion (U) in LSDA has improved the result. • The results obtained from LSDA + U are consistent with the experimental data. - Abstract: We have studied the elastic, electronic and magnetic properties along with the thermoelectric properties of an undoped filled skutterudite EuFe{sub 4}Sb{sub 12} using full-potential linearized augmented plane wave (FP-LAPW) method. The LSDA, LSDA + U and a new exchange-correlation functional called modified Becke Johnson (mBJ) potential based on density functional theory (DFT) were used for studying material properties. The Eu-f and Fe-d are strongly correlated elements thus the inclusion of Coulomb repulsion (U) expected to give an exact ground state properties. The exchange-splitting of Eu-4f states were analyzed to explain the ferromagnetic behavior of EuFe{sub 4}Sb{sub 12} (half-metallic behavior). The numerical values of isotropic elastic parameters and related properties are estimated in the framework of the Voigt–Reuss–Hill approximation. The calculation of thermal transport properties at various temperature shows the high value of Seebeck coefficient and figure of merit (ZT) = 0.25 at room temperature in consistent to the experimental results.

  3. Low thermal conductivity skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Fleurial, J P; Caillat, T; Borshchevsky, A

    1997-07-01

    Recent experimental results on semiconductors with the skutterudite crystal structure show that these materials possess attractive transport properties and have a good potential for achieving ZT values substantially larger than for state-of-the-art thermoelectric materials. Both n-type and p-type conductivity samples have been obtained, using several preparation techniques. Associated with a low hole effective mass, very high carrier mobilities, low electrical resistivities and moderate Seebeck coefficients are obtained in p-type skutterudites. For a comparable doping level, the carrier mobilities of n-type samples are about an order of magnitude lower than the values achieved on p-type samples. However, the much larger electron effective masses and Seebeck coefficients on p-type samples. However, the much larger electron effective masses and Seebeck coefficients make n-type skutterudite promising candidates as well. Unfortunately, the thermal conductivities of the binary skutterudites compounds are too large, particularly at low temperatures, to be useful for thermoelectric applications. Several approaches to the reduction of the lattice thermal conductivity in skutterudites are being pursued: heavy doping, formation of solid solutions and alloys, study of novel ternary and filled skutterudite compounds. All those approaches have already resulted in skutterudite compositions with substantially lower thermal conductivity values in these materials. Recently, superior thermoelectric properties in the moderate to high temperature range were achieved for compositions combining alloying and filling of the skutterudite structure. Experimental results and mechanisms responsible for low thermal conductivity in skutterudites are discussed.

  4. Influence of Ni on the thermoelectric properties of the partially filled calcium skutterudites Ca.sub.y./sub.Co.sub.4-x./sub.Ni.sub.x./sub.Sb.sub.12./sub..

    Czech Academy of Sciences Publication Activity Database

    Puyet, M.; Dauscher, A.; Lenoir, B.; Bellouard, C.; Stiewe, C.; Müller, E.; Hejtmánek, Jiří; Tobola, J.

    2007-01-01

    Roč. 75, č. 24 (2007), 245110/1-245110/9 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : partially filled skutterudites * thermoelectric properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

  5. “Pesting”-like oxidation phenomenon of p-type filled skutterudite Ce{sub 0.9}Fe{sub 3}CoSb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Pengfei [State Key Laboratory of High Performance Ceramic and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 DingXi Road, Shanghai 200050 (China); Xia, Xugui; Huang, Xiangyang; Gu, Ming [CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 DingXi Road, Shanghai 200050 (China); Qiu, Yuting [State Key Laboratory of High Performance Ceramic and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 DingXi Road, Shanghai 200050 (China); Chen, Lidong, E-mail: chenlidong@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramic and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 DingXi Road, Shanghai 200050 (China)

    2014-11-05

    Highlights: • Ce{sub 0.9}Fe{sub 3}Co{sub 1}Sb{sub 12} exhibits “pesting”-like oxidation phenomenon at high temperature. • The highest oxidation rate of Ce{sub 0.9}Fe{sub 3}Co{sub 1}Sb{sub 12} appears around 800 K. • Severe periodically oxide layer peeling-off behavior is observed around 800 K. • The co-existence of Fe and Co is responsible for the poor oxidation resistance. - Abstract: Oxidation behavior of p-type filled skutterudite Ce{sub 0.9}Fe{sub 3}CoSb{sub 12} in air was investigated and the oxidation mechanism was discussed in this study. Ce{sub 0.9}Fe{sub 3}CoSb{sub 12} exhibits interesting “pesting”-like oxidation phenomenon around 800 K. The bulk sample completely disintegrates into a crowd of plate-like particles under this temperature range after only 24 h exposure in air. However, this abnormal oxidation phenomenon is not observed at temperature below 750 K or above 850 K. This result is consistent with the thermogravimetry and derivative thermogravimetry measurements which show that the oxidation rate for Ce{sub 0.9}Fe{sub 3}CoSb{sub 12} around 800 K is the highest among 650–900 K. Microstructure observations suggest that this “pesting”-like oxidation is related with the severe periodically oxide layer peeling-off behavior around 800 K, which makes the Ce{sub 0.9}Fe{sub 3}CoSb{sub 12} samples are easy to be oxidized because the fresh substrate surface is always exposed to high concentration oxygen atmosphere. X-ray diffraction and X-ray photoelectron spectroscopy measurements indicated that in the oxide scale the direct contact of Fe{sup 3+}-oxide and CoSb{sub 2}O{sub 4} which possess different formation/growth rate and volume expansion coefficient should be responsible for this peculiar oxide layer peeling-off behavior around 800 K. This work can serve as an important reference for the designation of M{sub y}Fe{sub 4−x}Co{sub x}Sb{sub 12}-based skutterudite thermoelectric device.

  6. Raman scattering study of filled skutterudite compounds

    International Nuclear Information System (INIS)

    Ogita, N; Kojima, R; Hasegawa, T; Takasu, Y; Udagawa, M; Kondo, T; Takeda, N; Ikeno, T; Ishikawa, K; Sugawara, H; Kikuchi, D; Sato, H; Sekine, C; Shirotani, I

    2007-01-01

    Raman scattering of skutterudite compounds RT 4 X 12 (R=La, Ce, Pr, Nd, Sm and Yb, T=Fe, Ru and Os, X=P and Sb) have been measured. All first-order Raman active phonons are observed and are assigned as the pnicogen vibrations. At the low energy region, the second-order phonons, due to the vibration of the rare earth ions with a flat phonon dispersion, are observed in the spectra of RRu 4 P 12 (R=La and Sm) and ROs 4 Sb 12 (R=La, Ce, Pr, Nd, and Sm). The appearance of the second-order phonons in the spectra is caused by an anharmonic vibrations of rare earth ions in large cage space and a large density of state due to the flat phonon dispersion. However, in spite of the similar cage space, the 2nd-order phonons are hardly observed for RFe 4 Sb 12 and RRu 4 Sb 12 . Thus, these results suggest that the dynamics of the rare earth ion is closely related to not only the cage size but also the electronic state due to the transition metals. Raman spectra of PrRu 4 P 12 show the drastic spectral change due to the metal-insulator transition. The phonon spectra and crystal field excitations due to the structural change have been assigned above and below the transition temperature

  7. Grain boundary engineering with nano-scale InSb producing high performance InxCeyCo4Sb12+z skutterudite thermoelectrics

    Directory of Open Access Journals (Sweden)

    Han Li

    2017-12-01

    Full Text Available Thermoelectric semiconductors based on CoSb3 hold the best promise for recovering industrial or automotive waste heat because of their high efficiency and relatively abundant, lead-free constituent elements. However, higher efficiency is needed before thermoelectrics reach economic viability for widespread use. In this study, n-type InxCeyCo4Sb12+z skutterudites with high thermoelectric performance are produced by combining several phonon scattering mechanisms in a panoscopic synthesis. Using melt spinning followed by spark plasma sintering (MS-SPS, bulk InxCeyCo4Sb12+z alloys are formed with grain boundaries decorated with nano-phase of InSb. The skutterudite matrix has grains on a scale of 100–200 nm and the InSb nano-phase with a typical size of 5–15 nm is evenly dispersed at the grain boundaries of the skutterudite matrix. Coupled with the presence of defects on the Sb sublattice, this multi-scale nanometer structure is exceptionally effective in scattering phonons and, therefore, InxCeyCo4Sb12/InSb nano-composites have very low lattice thermal conductivity and high zT values reaching in excess of 1.5 at 800 K.

  8. Inelastic neutron scattering study of crystal field levels in PrOs4As12

    International Nuclear Information System (INIS)

    Chi, Songxue; Dai, Pengcheng; Barnes, T.F.E.; Kang, H. J.; Lynn, J. W.; Ye, Feng; Maple, M. B.

    2008-01-01

    We use neutron scattering to study the Pr 3+ crystalline electric field (CEF) excitations in the filled skutterudite PrOs 4 As 12 . By comparing the observed levels and their strengths under neutron excitation with the theoretical spectrum and neutron excitation intensities, we identify the Pr 3+ CEF levels, and show that the ground state is a magnetic Γ 4 (2) triplet, and the excited states Γ 1 , Γ 4 (1) and Γ 23 are at 0.4, 13 and 23 meV, respectively. A comparison of the observed CEF levels in PrOs 4 As 12 with the heavy fermion superconductor PrOs 4 Sb 12 reveals the microscopic origin of the differences in the ground states of these two filled skutterudites

  9. Investigations of structural, elastic, electronic and thermodynamic properties of lutetium filled skutterudite LuFe4P12 under pressure effect: FP-LMTO method

    Directory of Open Access Journals (Sweden)

    Boudia Keltouma

    2015-12-01

    Full Text Available Structural, elastic, electronic and thermodynamic properties of ternary cubic filled skutterudite compound were calculated. We have computed the elastic modulus and its pressure dependence. From the elastic parameter behavior, it is inferred that this compound is elastically stable and ductile in nature. Through the quasi-harmonic Debye model, in which phononic effects are considered, the effect of pressure P (0 to 50 GPa and temperature T (0 to 3000 °C on the lattice constant, elastic parameters, bulk modulus B, heat capacity, thermal expansion coefficient α, internal energy U, entropy S, Debye temperature θD, Helmholtz free energy A, and Gibbs free energy G are investigated.

  10. Density-functional band-structure calculations for La-, Y-, and Sc-filled CoP3-based skutterudite structures

    International Nuclear Information System (INIS)

    Loevvik, O.M.; Prytz, O.

    2004-01-01

    The crystal structure, thermodynamic stability, and electronic structure of La-, Y-, and Sc-filled CoP 3 are predicted from density-functional band-structure calculations. The size of the cubic voids in the skutterudite structure is changed much less than the difference in size between the different filling atoms, and we expect that the larger rattling amplitude of the smaller Sc and Y atoms may decrease the lattice thermal conductivity of Sc- and Y-filled structures significantly compared to La-filled structures. The solubility of La, Y, and Sc in CoP 3 is calculated to be around 5, 3-6 %, and below 1% at 0 K, respectively. Based on similar systems, this is expected to increase considerably if Fe is substituted for Co. Fe substitution is also expected to compensate the increased charge carrier concentration of the filled structures that is seen in the calculated electron density of states. In conclusion, Sc- or Y-filled (FeCo)P 3 skutterudite structures are promising materials for thermoelectric applications

  11. Rare-earth (R) and transition metals (d) based skutterudites RM4Sb12: new materials for thermoelectric power generation; Etude de skutterudites de terres-rares (R) et de metaux d (M) du type RM4Sb12: de nouveaux materiaux thermoelectriques pour la generation d'electricite

    Energy Technology Data Exchange (ETDEWEB)

    Berardan, D.

    2004-07-15

    This thesis presents the physical and thermoelectric properties of new skutterudite compounds, with general formula R{sub y-p}R'{sub p}Fe{sub 4-x}(Co/Ni){sub x}Sb{sub 12} (R and R' = Ce, Yb, Ba, La). It shows that Yb valence state decreases when Yb fraction increases. However, it does not depend on the temperature, which evidences a mixed valence state (two different valence states for two distinct crystallographic sites at a local point of view). Ce is always trivalent in these compounds. The character of the dominant interactions changes from antiferromagnetic to ferromagnetic when one goes from trivalent cerium or lanthanum to nearly divalent ytterbium or divalent barium. The effective paramagnetic moment has been separated into three contributions originating from Ce, Yb and [Fe{sub 4}Sb{sub 12}]. The last one does not depend on the nature or on the valence state or R and R' atoms, but it decreases when Ni substitutes Fe. A magnetic transition occurs at 6.5 K for R = Yb and Ba, possibly to a spin glass state. Electrical and thermal transport properties have been determined from 5 K to 800 K, and the materials properties of the materials have been discussed concerning thermoelectric power generation. The power factor, and the thermoelectric figure of merit ZT are increased in Ce{sub y}/2Yb{sub y}/2Fe{sub 4-x}(Co/Ni){sub x}Sb{sub 12} type skutterudites as compared to R{sub y}Fe{sub 4-x}(Co/Ni){sub x}Sb{sub 12} type skutterudites. (author)

  12. Thermoelectric properties of In{sub 0.2}Co{sub 4}Sb{sub 12} skutterudites with embedded PbTe or ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Chubilleau, C.; Lenoir, B.; Candolfi, C.; Masschelein, P. [Université de Lorraine, CNRS, UMR 7198, Institut Jean Lamour, Parc de Saurupt, 54011 Nancy (France); Dauscher, A., E-mail: anne.dauscher@univ-lorraine.fr [Université de Lorraine, CNRS, UMR 7198, Institut Jean Lamour, Parc de Saurupt, 54011 Nancy (France); Guilmeau, E. [Laboratoire CRISMAT, UMR 6508, 6 boulevard Maréchal Juin, 14050 Caen Cedex (France); Godart, C. [ICMPE-CMTR, CNRS-UMR 7182, 2-8 rue H. Dunant, 94320 Thiais (France)

    2014-03-15

    Highlights: • Fabrication of nanostructured skutterudites ZnO or PbTe/In{sub 0.2}Co{sub 4}Sb{sub 12.} • Thermal conductivity modeling accounts for experimental results. • Greater lattice thermal conductivity decrease in In{sub 0.2}Co{sub 4}Sb{sub 12} than in CoSb{sub 3}. • A max ZT of 1.05 is obtained at 700 K in a 2 wt% ZnO-containing sample. -- Abstract: Transport properties of the skutterudite compound In{sub 0.2}Co{sub 4}Sb{sub 12} containing ZnO or PbTe nano-sized particles (2–12 wt%) were investigated by means of electrical resistivity, thermopower and thermal conductivity between 5 and 800 K. The composite powders were prepared by freeze-drying the nanoparticles with micron-sized In{sub 0.2}Co{sub 4}Sb{sub 12} powders. Densification was achieved by spark plasma sintering. All composites were characterized by X-ray powder diffraction and scanning electron microscopy. All the transport coefficients show similar temperature dependences suggesting little influence of the nature, semiconducting or insulating, of the nanoparticles. Both the electrical and the thermal conductivities decrease with increasing the PbTe or ZnO content. The impact of ZnO and PbTe on the thermal conductivity was modelled based on the Debye model taking into account a relaxation time constant reflecting phonon scattering by spherical nanoparticles. A maximum dimensionless figure of merit ZT of 1.05 at 700 K was achieved in a sample containing 2 wt% ZnO, a value quite similar to that of the reference In{sub 0.2}Co{sub 4}Sb{sub 12} compound.

  13. Thermoelectric properties of high pressure synthesized lithium and calcium double-filled CoSb3

    Directory of Open Access Journals (Sweden)

    Xiaohui Li

    2017-01-01

    Full Text Available Lithium and calcium are inefficient filling elements of CoSb3 at ambient pressure, but show nice filling behavior under high pressure. In this work, we synthesized Li/Ca double-filled CoSb3 with high pressure synthesis method. The products show the skutterudite structure of Im3¯ symmetry. Thermoelectric properties were effectively enhanced through Li and Ca co-filling. For the optimal Li0.08Ca0.18Co4Sb12 sample, the power factor maintains a relatively high value over the whole measurement temperature range and peaks at 4700μWm−1K−2, meanwhile the lattice thermal conductivity is greatly suppressed, leading to a maximal ZT of 1.18 at 700 K. Current work demonstrates high pressure synthesis as an effective method to produce multiple elemental filled CoSb3 skutterudites.

  14. Phase stability and lattice thermal conductivity reduction in CoSb{sub 3} skutterudites, doped with chalcogen atoms

    Energy Technology Data Exchange (ETDEWEB)

    Battabyal, M., E-mail: manjusha.battabyal@project.arci.res.in; Priyadarshini, B.; Gopalan, R. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Taramani, Chennai-600113 (India); Pradipkanti, L.; Satapathy, Dillip K. [Department of Physics, Indian Institute of Technology Madras, Chennai-600036 (India)

    2016-07-15

    We report a significant reduction in the lattice thermal conductivity of the CoSb{sub 3} skuttertudites, doped with chalcogen atoms. Te/Se chalcogen atoms doped CoSb{sub 3} skutterudite samples (Te{sub 0.1}Co{sub 4}Sb{sub 12}, Se{sub 0.1}Co{sub 4}Sb{sub 12}, Te{sub 0.05}Se{sub 0.05}Co{sub 4}Sb{sub 12}) are processed by ball milling and spark plasma sintering. X-ray diffraction data combined with energy dispersive X-ray spectra indicate the doping of Te/Se chalcogen atoms in the skutterudite. The temperature dependent X-ray diffraction confirms the stability of the Te/Se doped CoSb{sub 3} skutterudite phase and absence of any secondary phase in the temperature range starting from 300 K to 773 K. The Raman spectroscopy reveals that different chalcogen dopant atoms cause different resonant optical vibrational modes between the dopant atom and the host CoSb{sub 3} skutterudite lattice. These optical vibrational modes do scatter heat carrying acoustic phonons in a different spectral range. It was found that among the Te/Se chalcogen atoms, Te atoms alter the host CoSb{sub 3} skutterudite lattice vibrations to a larger extent than Se atoms, and can potentially scatter more Sb related acoustic phonons. The Debye model of lattice thermal conductivity confirms that the resonant phonon scattering has important contributions to the reduction of lattice thermal conductivity in CoSb{sub 3} skutterudites doped with Te/Se chalcogen atoms. Lattice thermal conductivity ∼ 0.9 W/mK at 773 K is achieved in Te{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites, which is the lowest value reported so far in CoSb{sub 3} skutterudites, doped with single Te chalcogen atom.

  15. Anomalous enhancement of the lower critical field deep in the superconducting state of LaRu4As12

    Science.gov (United States)

    Juraszek, J.; Bochenek, Ł.; Wawryk, R.; Henkie, Z.; Konczykowski, M.; Cichorek, T.

    2018-05-01

    LaRu4As12 with the critical temperature Tc = 10.4 K displays several features which point at a non-singlet superconducting order parameter, although the bcc crystal structure of the filled skutterudites does not favour the emergence of multiple energy gaps. LaRu4As12 displays an unexpected enhancement of the lower critical field deep in superconducting state which can be attributed to the existence of two superconducting gaps. At T = 0.4 K, the local magnetization measurements were performed utilizing miniaturized Hall sensors.

  16. {sup 106}Ruthenium Plaque Therapy (RPT) for Retinoblastoma

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Naoya, E-mail: namuraka@ncc.go.jp [Department of Radiation Oncology, National Cancer Center Hospital, Tokyo (Japan); Suzuki, Shigenobu [Department of Ophthalmic Oncology, National Cancer Center Hospital, Tokyo (Japan); Ito, Yoshinori [Department of Radiation Oncology, National Cancer Center Hospital, Tokyo (Japan); Yoshimura, Ryoichi [Department of Diagnostic Radiology and Oncology, Head and Neck Reconstruction Division, Graduate School, Tokyo Medical and Dental University, Tokyo (Japan); Inaba, Koji; Kuroda, Yuki; Morota, Madoka; Mayahara, Hiroshi; Sakudo, Mototake; Wakita, Akihisa; Okamoto, Hiroyuki; Sumi, Minako; Kagami, Yoshikazu [Department of Radiation Oncology, National Cancer Center Hospital, Tokyo (Japan); Nakagawa, Keiichi; Ohtomo, Kuni [Department of Radiology, University of Tokyo Hospital, Tokyo (Japan); Itami, Jun [Department of Radiation Oncology, National Cancer Center Hospital, Tokyo (Japan)

    2012-09-01

    Purpose: To evaluate the effectiveness of episcleral {sup 106}ruthenium plaque therapy (RPT) in the management of retinoblastoma. Methods and Materials: One hundred one RPTs were retrospectively analyzed that were performed in 90 eyes of 85 patients with retinoblastoma at National Cancer Center Hospital between 1998 and 2008. Each RPT had a corresponding tumor and 101 tumors were considered in the analysis of local control. Median follow-up length was 72.8 months. Median patient age at the RPT was 28 months. Median prescribed doses at reference depth and outer surface of the sclera were 47.4 Gy and 162.3 Gy, respectively. Results: Local control rate (LCR) and ocular retention rate (ORR) at 2 years were 33.7% and 58.7%, respectively. Unilateral disease, International Classification of Retinoblastoma group C or more advanced at the first presentation or at the time of RPT, vitreous and/or subretinal seeding, tumor size greater than 5 disc diameter (DD), reference depth greater than 5 mm, dose rate at reference depth lower than 0.7 Gy/hour, dose at the reference depth lower than 35 Gy, and (biologically effective dose with an {alpha}/{beta} ratio of 10 Gy) at the reference depth lower than 40 Gy{sub 10} were associated with unfavorable LCR. Two patients died of metastatic disease. Radiation complications included retinal detachment in 12 eyes (13.3%), proliferative retinopathy in 6 (6.7%), rubeosis iris in 2 (2.2%), and posterior subcapsular cataract in 23 (25.6%). Conclusion: RPT is an effective eye-preserving treatment for retinoblastoma.

  17. Synthesis crystal stuctrure and thermoelectric properties of the ternary skutterudite Fe2Pd2Sb12

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Jiří; Laufek, F.; Plecháček, T.; Plášil, J.

    2010-01-01

    Roč. 493, 1-2 (2010), s. 50-54 ISSN 0925-8388 R&D Projects: GA ČR GA203/07/0267 Institutional research plan: CEZ:AV0Z40500505 Keywords : Fe2Pd2Sb12 * crystal structure * skutterudite Subject RIV: CA - Inorganic Chemistry Impact factor: 2.138, year: 2010

  18. Structure, microstructure and microhardness of rapidly solidified Smy(FexNi1-x)4Sb12 (x = 0.45, 0.50, 0.70, 1) thermoelectric compounds

    Science.gov (United States)

    Artini, C.; Castellero, A.; Baricco, M.; Buscaglia, M. T.; Carlini, R.

    2018-05-01

    Skutterudites are interesting compounds for thermoelectric applications. The main drawback in the synthesis of skutterudites by solidification of the melt is the occurrence of two peritectic reactions requiring long annealing times to form a single phase. Aim of this work is to investigate an alternative route for synthesis, based on rapid solidification by planar flow casting. The effect of cooling rate on phases formation and composition, as well as on structure, microstructure and mechanical properties of the filled Smy(FexNi1-x)4Sb12 (x = 0.45, 0.50, 0.70, 1) skutterudites was studied. Conversely to slowly cooled ingots, rapidly quenched ribbons show skutterudite as the main phase, suggesting that deep undercooling of the liquid prevents the nucleation of high temperature phases, such as (Fe,Ni)Sb and (Fe,Ni)Sb2. In as-quenched samples, a slightly out of equilibrium Sm content is revealed, which does not alter the position of the p/n boundary; nevertheless, it exerts an influence on crystallographic properties, such as the cell parameter and the shape of the Sb4 rings in the structure. As-quenched ribbons show a fine microstructure of the skutterudite phase (grain size of 2-20 μm), which only moderately coarsens after annealing at 873 K for 4 days. Vickers microhardness values (350-400 HV) of the skutterudite phase in as-quenched ribbons are affected by the presence of softer phases (i.e. Sb), which are homogeneously and finely dispersed within the sample. The skutterudite hardens after annealing as a consequence of a moderate grain growth, which limits the matrix effect due to the presence of additional phases.

  19. Field-induced magnetic phase transitions and correlated electronic states in the hexagonal RAgGE and RPtIn series

    Energy Technology Data Exchange (ETDEWEB)

    Morosan, Emilia [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    The present work was initially motivated by the desire to continue the study of complex metamagnetism in relation to the crystal structure of various compounds; this study already included tetragonal compounds like HoNi2B2C (Canfield 1997b; Kalatsky 1998) and DyAgSb2 (Myers 1999), in which the rare earths occupy unique tetragonal positions. We intended to find hexagonal systems suited for such a study, with complex metamagnetic properties, and the search for extremely anisotropic hexagonal compounds turned into a rewarding exploration. We identified and grew most of the heavy rare earth members of two isostructural series, RAgGe and RPtIn, both belonging to the hexagonal Fe2P family of materials. In each of these series we found one compound, TmAgGe, and TbPtIn respectively, that was suitable for a simple study of angular dependent metamagnetism: they had three rare earth ions in the unit cell, positioned at a unique crystallographic site with orthorhombic point symmetry. The magnetization of both TmAgGe and TbPtIn was extremely anisotropic, with larger values for the in-plane orientation of the applied field than in the axial direction. Complex metamagnetic transitions existed for field within the ab-plane, and, similar to the case of the tetragonal compounds RNi2B2C and DyAgSb2, they depended on the field orientation within the basal plane. We were thus able to develop a two-dimensional model, the three co-planar Ising-like systems model, which described well the angular dependence of the metamagnetic transitions in the TmAgGe and TbPtIn hexagonal compounds. Having three magnetic moments in the hexagonal unit cell, in orthorhombic point symmetry positions, added to the complexity of the analysis compared to the case of tetragonal compounds having one rare earth atom per unit cell, in tetragonal point symmetry. However, the three co-planar Ising-like systems model yielded complex, but

  20. Optical study on metal-insulator change in PrFe4P12 under high pressure

    International Nuclear Information System (INIS)

    Irizawa, Akinori; Sato, Kazuyuki; Kobayashi, Masayo; Nanba, Takao; Matsunami, Masaharu; Sugawara, Hitoshi; Sato, Hideyuki

    2007-01-01

    The optical study has been performed on filled-skutterudite PrFe 4 P 12 applying pressure up to 16 GPa. The reflectivity at far-infrared (FIR) region showed that the metallic reflectivity looses its intensity and the weak phonon peaks at ambient pressure become prominent with pressures at lower temperature. It insists that the electronic states near Fermi level in this compound changes drastically from metallic properties to insulating ones at high pressures and low temperatures, and the insulating phase persists up to 16 GPa against the electrical resistivity data under pressure

  1. スクッテルド鉱型化合物LnRu4P12(Ln=ランタニド)の構造と電子物性

    OpenAIRE

    内海, 貴徳; 関根, ちひろ; 木村, 繁之; 井上, 雅士; 城谷, 一民

    1999-01-01

    Ternary ruthenium phosphides LnRu4P12 (Ln=La,Ce,Pr,Nd,Sm,Eu,Gd and Tb) with the filled skutterudite-type structure have been prepared at high temperatures and high pressures. The crystal structure of a new compound TbRu4P12 is refined by the Rietveld analysis of the powder X-ray diffraction data. The physical properties of LnRu4P12 have been studied by means of electrical resistivity, magnetic susceptibility, magnetization and specific-heat measurements at low temperatures. LaRu4P12 is a supe...

  2. Analyzing proteasomal subunit expression reveals Rpt4 as a prognostic marker in stage II colorectal cancer.

    LENUS (Irish Health Repository)

    2012-02-01

    Colorectal cancer is a leading cause of cancer-related deaths worldwide. Early diagnosis and treatment of colorectal cancer is the key to improving survival rates and as such a need exists to identify patients who may benefit from adjuvant chemotherapy. The dysregulation of the ubiquitin-proteasome system (UPS) has been implicated in oncogenesis and cancer cell survival, and proteasome inhibitors are in clinical use for a number of malignancies including multiple myeloma. In our study, we examined the protein expression of several key components of the UPS in colorectal cancer using immunohistochemistry to determine expression levels of ubiquitinylated proteins and the proteasomal subunits, 20S core and Rpt4 in a cohort of 228 patients with colon cancer. Multivariate Cox analysis revealed that neither the intensity of either ubiquitinylated proteins or the 20S core was predictive in either Stage II or III colon cancer for disease free survival or overall survival. In contrast, in Stage II patients increased Rpt4 staining was significantly associated with disease free survival (Cox proportional hazard ratio 0.605; p = 0.0217). Our data suggest that Rpt4 is an independent prognostic variable for Stage II colorectal cancer and may aid in the decision of which patients undergo adjuvant chemotherapy.

  3. Muon spin relaxation and rotation studies of the filled skutterudite alloys praseodymium osmium ruthenium antimonide and praseodymium lanthanum osmium antimonide

    Science.gov (United States)

    Shu, Lei

    Some filled skutterudite compounds have recently been found to exhibit very interesting properties. The first Pr-based heavy-fermion superconductor, PrOs4Sb12, is an intriguing material due to the unusual properties of both its normal and superconducting states. Comprehensive muon spin rotation and relaxation studies and magnetic susceptibility measurements, described in this dissertation, have been performed to investigate the microscopic properties of PrOs4Sb12 and its Ru and La doped alloys. The temperature dependence of penetration depth measured in the vortex state of PrOs4Sb12 using transverse-field muon spin rotation (TF-muSR) is weaker than those measured by radiofrequency measurements. A scenario based on two-band superconductivity in PrOs4Sb 12, is proposed to resolve this difference. TF-muSR experiments also suggest the suppression of superfluid density with Ru doping, probably due to impurity scattering. In addition, magnetic susceptibility data as well as analysis of the muSR data in PrOs4Sb12 reveal a nearly linear relation of mu+ Knight shift vs. magnetic susceptibility. This suggests that the muon charge does not affect the crystalline electric field splitting of Pr3+ near neighbors. Additional evidence comes from the fact that the superconducting transition temperature Tc measured from muSR is consistent with the bulk superconducting values. Zero-field muon spin relaxation (ZF-muSR) experiments have been carried out in the Pr(Os1-xRux) 4Sb12 and Pr1-yLayOs 4Sb12 alloy systems to investigate the time-reversal symmetry (TRS) breaking found in an earlier ZF-muSR study of the end compound PrOs 4Sb12. The results from measurements at KEK, Japan, suggest that Ru doping is considerably more efficient than La doping in suppressing TRS breaking superconducting in PrOs4Sb12. However, we think that the spontaneous local field that indicates TRS breaking detected by ZF-muSR may depend on sample quality if those fields are from inhomogeneity in the

  4. High-temperature thermoelectric properties of p-type skutterudites Ba0.15Yb x Co3FeSb12 and Yb y Co3FeSb9As3

    KAUST Repository

    Dong, Yongkwan

    2014-08-28

    Two series of p-type polycrystalline skutterudites, Ba0.15YbxCo3FeSb12 and YbyCo3FeSb9As3 with varying Yb concentrations, were synthesized by solid-state reaction and then densified by hot pressing. The phase and stoichiometries of the resulting materials were characterized by powder X-ray diffraction and energy dispersive spectroscopy, while their high-temperature transport properties were investigated from 300 to 800 K. The Seebeck coefficients and electrical resistivities increased linearly with increasing temperature for the double-filled specimens. The Seebeck coefficients and electrical resistivities did not change very much for the As-substituted specimens. The thermal conductivity for all specimens decreased with increasing temperature up to 700 K, corresponding to the plateau in the Seebeck coefficient, and then increased again due to bipolar diffusion. We find that double filling is a more feasible approach to thermoelectric property optimization than single filling with As substitution. © 2014 Springer Science+Business Media New York.

  5. Thermoelectric skutterudite compositions and methods for producing the same

    Science.gov (United States)

    Ren, Zhifeng; Yang, Jian; Yan, Xiao; He, Qinyu; Chen, Gang; Hao, Qing

    2014-11-11

    Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials.

  6. Polar Kerr Effect from Time-Reversal Symmetry Breaking in the Heavy-Fermion Superconductor PrOs4Sb12

    Science.gov (United States)

    Levenson-Falk, E. M.; Schemm, E. R.; Aoki, Y.; Maple, M. B.; Kapitulnik, A.

    2018-05-01

    We present polar Kerr effect measurements of the filled skutterudite superconductor PrOs4 Sb12 . Simultaneous ac susceptibility measurements allow us to observe the superconducting transition under the influence of heating from the optical beam. A nonzero Kerr angle θK develops below the superconducting transition, saturating at ˜300 nrad at low temperatures. This result is repeated across several measurements of multiple samples. By extrapolating the measured θK(T ) to zero optical power, we are able to show that the Kerr angle onset temperature in one set of measurements is consistent with the transition to the B phase at TC 2. We discuss the possible explanations for this result and its impact on the understanding of multiphase and inhomogeneous superconductivity in PrOs4 Sb12 .

  7. Low-temperature anomalies of photoinduced second harmonic generation in skutterudites

    International Nuclear Information System (INIS)

    Viennois, R; Kityk, I V; Terki, F; Charar, S; Muntzer, A; Kasperczyk, J; Ravot, D; Tedenac, J C

    2003-01-01

    Photoinduced second harmonic generation (PISHG) was found in skutterudite compounds of CeFe 4 Sb 12 and Ce 0.7 Fe 3.5 Ni 0.5 Sb 12 . Measurements versus temperature, pump-probe delaying time and external magnetic field were performed. The studied compounds belong to moderate heavy fermion compounds (HFC) in the ground state. The PISHG signals appear at 6.8 and 4.9 K for CeFe 4 Sb 12 and Ce 0.7 Fe 3.5 Ni 0.5 Sb 12 , respectively. We suspect that these signals are due to anharmonic electron-phonon interactions creating a charge density non-centrosymmetry. The observed effects are caused either by a possible phase transition or by drastic changes in the electron structure of the HFC with decreasing temperature

  8. Properties of thin N-type Yb0.14Co4Sb12 and P-type Ce0.09Fe0.67Co3.33Sb12 skutterudite layers prepared by laser ablation

    Czech Academy of Sciences Publication Activity Database

    Zeipl, Radek; Walachová, Jarmila; Lorinčík, J.; Leshkov, Sergey; Josieková, M.; Jelínek, M.; Kocourek, Tomáš; Jurek, Karel; Navrátil, Jiří; Beneš, L.; Plecháček, T.

    2010-01-01

    Roč. 28, č. 4 (2010), s. 523-527 ISSN 0734-2101 R&D Projects: GA ČR GAP108/10/1315; GA ČR GA203/07/0267 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z40500505; CEZ:AV0Z10100521 Keywords : thermoelectrics * thin layers * skutterudites Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.291, year: 2010

  9. Structure and Chemical Bond of Thermoelectric Ce-Co-Sb Skutterudites

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The correlations among composition,structure,chemical bond and thermoelectric property of skutterudites CoSb3 and CeCo5Fe3Sb12 have been studied by using density function and discrete variation (DFT-DVM) method.Three models for this study were proposed and calculated by which the "rattling" pattern was described.Model 1 is with Ce in the center,model 2 is with Ce away the center and near to Sb,and model 3 is also with Ce away the center but near to Fe.The calculated results show that in model 3,the ionic bond is the strongest,but the covalent bond is the weakest.Due to the different changes between ionic and covalent bond,there is less difference in the stability among the models 1,2 and 3.Therefore,these different models can exist at the same time,or can translate from one to another more easily.In other words,the "rattling" pattern has taken place.Unfilled model of CoSb3,without Ce and Fe,is called model 4.The covalent bond of Co-Sb or Fe-Sb in models 1,2 and 3 is weaker than that of Co-Sb in model 4,as some electrical cloud of Sb takes part in the covalent bond of Ce-Sb in the filled models.The result is consistent with the experimental result that the thermal conductivity of CeCo5Fe3Sb12 is lower than that of CoSb3,and the thermoelectric property of CeCo5Fe3Sb12 is superior to that of CoSb3.

  10. Crystal structure, {sup 139}La NMR and transport properties of the As-based filled skutterudites LaOs{sub 4}As{sub 12} and PrOs{sub 4}As{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Wawryk, R.; Zogal, O.; Pietraszko, A.; Paluch, S.; Cichorek, T. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland); Yuhasz, W.M.; Sayles, T.A.; Ho, P.-C.; Yanagisawa, T.; Butch, N.P.; Maple, M.B. [Department of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego (United States); Henkie, Z. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland)], E-mail: Z.Henkie@int.pan.wroc.pl

    2008-02-28

    We have grown single crystals of LaOs{sub 4}As{sub 12} and PrOs{sub 4}As{sub 12}, which crystallize in the LaFe{sub 4}P{sub 12}-type structure (Im3-bar space group) with the lattice parameters of 8.542(1) A and 8.520(1) A, respectively. From a narrow {sup 139}La NMR line, we estimated an appreciable Knight shift ({sup 139}K) and a relatively long spin-lattice-relaxation time in the non-4f electron system LaOs{sub 4}As{sub 12}. Surprisingly, while {sup 139}K vary non-monotonically with temperature, the magnetic susceptibility increases upon cooling over the whole temperature range. Interestingly, the high-temperature dependence of the thermoelectric power of LaOs{sub 4}As{sub 12} is remarkably similar to that one of PrOs{sub 4}As{sub 12}.

  11. Electronic band structures of binary skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Banaras [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Saifullah [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Jalali-Asadabadi, S. [Department of Physics, Faculty of Science, University of Isfahan (UI), 81744 Isfahan (Iran, Islamic Republic of); Khan, Imad [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Ahmad, Iftikhar, E-mail: ahma5532@gmail.com [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan)

    2015-10-25

    The electronic properties of complex binary skutterudites, MX{sub 3} (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures.

  12. Electronic band structures of binary skutterudites

    International Nuclear Information System (INIS)

    Khan, Banaras; Aliabad, H.A. Rahnamaye; Saifullah; Jalali-Asadabadi, S.; Khan, Imad; Ahmad, Iftikhar

    2015-01-01

    The electronic properties of complex binary skutterudites, MX 3 (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures

  13. 'cold' events in 12C–AgBr interactions at 4.5 A GeV

    Indian Academy of Sciences (India)

    from the same data of 12C–AgBr interactions at 4.5 A GeV by Takagi moments method, which are different from those obtained in the present work. The quan- titative disagreement in the values of Dq's is due to the different approaches for determination of the generalized dimension (Dq). It is extremely interesting to observe ...

  14. The 12 GeV Upgrade at Jefferson Lab

    International Nuclear Information System (INIS)

    Rolf Ent

    2002-01-01

    There has been a remarkable fruitful evolution of our picture of the behavior of strongly interacting matter during the almost two decades that have passed since the parameters of the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab were defined. These advances have revealed important new experimental questions best addressed by a CEBAF-class machine at higher energy. Fortunately, favorable technical developments coupled with foresight in the design of the facility make it feasible to triple (double) CEBAF's design (achieved) beam energy from 4 (6) GeV to 12 GeV, in a cost-effective manner: the Upgrade can be realized for about 15% of the cost of the initial facility. This Upgrade would enable the worldwide community to greatly expand its physics horizons. In addition to in general improving the figure of merit and momentum transfer range of the present Jefferson Lab physics program, raising the energy of the accelerator to 12 GeV opens up two main new areas of physics: (1) It allows direct exploration of the quark-gluon structure of hadrons and nuclei in the ''valence quark region''. It is known that inclusive electron scattering at the high momentum and energy transfers available at 12 GeV is governed by elementary interactions with quarks and, indirectly, gluons. The original CEBAF energy is not adequate to study this critical region, while with continuous 12 GeV beams one can cleanly access the entire ''valence quark region'' and exploit the newly discovered Generalized Parton Distributions. In addition, a 12-GeV Jefferson Lab can essentially complete the studies of the transition from hadronic to quark-gluon degrees of freedom. (2) It allows crossing the threshold above which the origins of quark confinement can be investigated. Specifically, 12 GeV will enable the production of certain ''exotic'' mesons. Whereas in the QCD region of asymptotic freedom ample evidence for the role of gluons exist through the observation of gluon jets

  15. RPP-PRT-58489, Revision 1, One Systems Consistent Safety Analysis Methodologies Report. 24590-WTP-RPT-MGT-15-014

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Mukesh [URS Professional Solutions LLC, Aiken, SC (United States); Niemi, Belinda [Washington River Protection Solutions, LLC, Richland, WA (United States); Paik, Ingle [Washington River Protection Solutions, LLC, Richland, WA (United States)

    2015-09-02

    In 2012, One System Nuclear Safety performed a comparison of the safety bases for the Tank Farms Operations Contractor (TOC) and Hanford Tank Waste Treatment and Immobilization Plant (WTP) (RPP-RPT-53222 / 24590-WTP-RPT-MGT-12-018, “One System Report of Comparative Evaluation of Safety Bases for Hanford Waste Treatment and Immobilization Plant Project and Tank Operations Contract”), and identified 25 recommendations that required further evaluation for consensus disposition. This report documents ten NSSC approved consistent methodologies and guides and the results of the additional evaluation process using a new set of evaluation criteria developed for the evaluation of the new methodologies.

  16. Integral measurement of the $^{12}$C(n,p)$^{12}$B reaction up to 10 GeV

    CERN Document Server

    Žugec, P; Bosnar, D; Ventura, A; Mengoni, A; Altstadt, S; Andrzejewski, J; Audouin, L; Barbagallo, M; Bécares, V; Bečvář, F; Belloni, F; Berthoumieux, E; Billowes, J; Boccone, V; Brugger, M; Calviani, M; Calviño, F; Cano-Ott, D; Carrapiço, C; Cerutti, F; Chiaveri, E; Chin, M; Cortés, G; Cortés-Giraldo, M.A; Cosentino, L; Diakaki, M; Domingo-Pardo, C; Dressler, R; Duran, I; Eleftheriadis, C; Ferrari, A; Finocchiaro, P; Fraval, K; Ganesan, S; García, A R; Giubrone, G; Gómez-Hornillos, M B; Gonçalves, I F; González-Romero, E; Griesmayer, E; Guerrero, C; Gunsing, F; Gurusamy, P; Heinitz, S; Jenkins, D G; Jericha, E; Käppeler, F; Karadimos, D; Kivel, N; Kokkoris, M; Krtička, M; Kroll, J; Langer, C; Lederer, C; Leeb, H; Leong, L S; Meo, S Lo; Losito, R; Manousos, A; Marganiec, J; Martínez, T; Massimi, C; Mastinu, P; Mastromarco, M; Mendoza, E; Milazzo, P M; Mingrone, F; Mirea, M; Mondalaers, W; Musumarra, A; Paradela, C; Pavlik, A; Perkowski, J; Plompen, A; Praena, J; Quesada, J; Rauscher, T; Reifarth, R; Riego, A; Roman, F; Rubbia, C; Sarmento, R; Saxena, A; Schillebeeckx, P; Schmidt, S; Schumann, D; Tagliente, G; Tain, J L; Tarrío, D; Tassan-Got, L; Tsinganis, A; Valenta, S; Vannini, G; Variale, V; Vaz, P; Versaci, R; Vermeulen, M J; Vlachoudis, V; Vlastou, R; Wallner, A; Ware, T; Weigand, M; Weiß, C; Wright, T

    2016-01-01

    The integral measurement of the $^{12}$C(n,p)$^{12}$B reaction was performed at the neutron time of flight facility n_TOF at CERN. The total number of $^{12}$B nuclei produced per neutron pulse of the n_TOF beam was determined using the activation technique in combination with a time of flight technique. The cross section is integrated over the n_TOF neutron energy spectrum from reaction threshold at 13.6 MeV to 10 GeV. Having been measured up to 1 GeV on basis of the $^{235}$U(n,f) reaction, the neutron energy spectrum above 200 MeV has been reevaluated due to the recent extension of the cross section reference for this particular reaction, which is otherwise considered a standard up to 200 MeV. The results from the dedicated GEANT4 simulations have been used to evaluate the neutron flux from 1 GeV up to 10 GeV. The experimental results related to the $^{12}$C(n,p)$^{12}$B reaction are compared with the evaluated cross sections from major libraries and with the predictions of different GEANT4 models, which m...

  17. Elastic p-4He scattering near 1 GeV

    International Nuclear Information System (INIS)

    Wallace, S.J.; Alexander, Y.

    1977-02-01

    New 1.029 GeV p- 4 He data from an Argonne-UCLA-Minnesota collaboration are in excellent agreement with existing multiple diffraction theory predictions. The theoretical calculation includes spin and isospin dependence of the Δ intermediate state process that fills the first diffraction minimum. The recently normalized Saclay data and the older Brookhaven data disagree with our calculation and the new data

  18. Magnetic properties of CeyFe4-xNixSb12

    International Nuclear Information System (INIS)

    Viennois, R.; Ravot, D.; Tedenac, J.C.; Charar, S.; Mauger, Alain

    2005-01-01

    The structural and magnetic properties of the metallic skutterudite CeFe 4 Sb 12 have been investigated, with those of Ce y Fe 4-x Ni x Sb z with compositions approaching the relations y=(4-2x)/3, z=12 for which the materials are semiconductors. The large and temperature-dependent contribution of Fe to the magnetic susceptibility of CeFe 4 Sb 12 has been isolated from the Ce contribution, which makes possible a quantitative analysis of the Kondo lattice behavior. In CeFe 4 Sb 12 the Wilson-Sommerfeld ratio is modified by a factor two with respect to former analyses where the magnetic contribution of Fe had been neglected. The main effect of the reduction of the free carrier (hole) concentration in Ce y Fe 4 Sb 12 is to suppress the Kondo effect and the Fe contribution to the magnetic susceptibility. The samples with theoretical hole concentration per unit cell p*=z-8-3y-2x smaller than 0.5 behave like semiconductors in which the exchange between localized Ce 3+ spins is negligible, and are most promising for a potential use as thermoelements

  19. Evaluation of Thermoelectric Performance and Durability of Functionalized Skutterudite Legs

    Science.gov (United States)

    Skomedal, Gunstein; Kristiansen, Nils R.; Sottong, Reinhard; Middleton, Hugh

    2017-04-01

    Thermoelectric generators are a promising technology for waste heat recovery. As new materials and devices enter a market penetration stage, it is of interest to employ fast and efficient measurement methods to evaluate the long-term stability of thermoelectric materials in combination with metallization and coating (functionalized thermoelectric legs). We have investigated a method for measuring several thermoelectric legs simultaneously. The legs are put under a common temperature gradient, and the electrical characteristics of each leg are measured individually during thermal cycling. Using this method, one can test different types of metallization and coating applied to skutterudite thermoelectric legs and look at the relative changes over time. Postcharacterization of these initial tests with skutterudite legs using a potential Seebeck microprobe and an electron microscope showed that oxidation and interlayer diffusion are the main reasons for the gradual increase in internal resistance and the decrease in open-circuit voltage. Although we only tested skutterudite material in this work, the method is fully capable of testing all kinds of material, metallization, and coating. It is thus a promising method for studying the relationship between failure modes and mechanisms of functionalized thermoelectric legs.

  20. Space-filling, multifractal, localized thermal spikes in Si, Ge and ZnO

    Science.gov (United States)

    Ahmad, Shoaib; Abbas, Muhammad Sabtain; Yousuf, Muhammad; Javeed, Sumera; Zeeshan, Sumaira; Yaqub, Kashif

    2018-04-01

    The mechanism responsible for the emission of clusters from heavy ion irradiated solids is proposed to be thermal spikes. Collision cascade-based theories describe atomic sputtering but cannot explain the consistently observed experimental evidence for significant cluster emission. Statistical thermodynamic arguments for thermal spikes are employed here for qualitative and quantitative estimation of the thermal spike-induced cluster emission from Si, Ge and ZnO. The evolving cascades and spikes in elemental and molecular semiconducting solids are shown to have fractal characteristics. Power law potential is used to calculate the fractal dimension. With the loss of recoiling particles' energy the successive branching ratios get smaller. The fractal dimension is shown to be dependent upon the exponent of the power law interatomic potential D = 1/2m. Each irradiating ion has the probability of initiating a space-filling, multifractal thermal spike that may sublime a localized region near the surface by emitting clusters in relative ratios that depend upon the energies of formation of respective surface vacancies.

  1. Integral measurement of the {sup 12}C(n, p){sup 12}B reaction up to 10 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Zugec, P.; Bosnar, D. [University of Zagreb, Department of Physics, Faculty of Science, Zagreb (Croatia); Colonna, N.; Barbagallo, M.; Mastromarco, M.; Tagliente, G.; Variale, V. [Istituto Nazionale di Fisica Nucleare, Bari (Italy); Ventura, A. [Istituto Nazionale di Fisica Nucleare, Bologna (Italy); Mengoni, A. [ENEA, Bologna (Italy); Altstadt, S.; Langer, C.; Lederer, C.; Reifarth, R.; Schmidt, S.; Weigand, M. [Johann-Wolfgang-Goethe Universitaet, Frankfurt (Germany); Andrzejewski, J.; Marganiec, J.; Perkowski, J. [Uniwersytet Lodzki, Lodz (Poland); Audouin, L.; Leong, L.S.; Tassan-Got, L. [Centre National de la Recherche Scientifique/IN2P3 - IPN, Orsay (France); Becares, V.; Cano-Ott, D.; Garcia, A.R.; Gonzalez-Romero, E.; Martinez, T.; Mendoza, E. [Centro de Investigaciones Energeticas Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Becvar, F.; Krticka, M.; Kroll, J.; Valenta, S. [Charles University, Prague (Czech Republic); Belloni, F.; Mondalaers, W.; Plompen, A.; Schillebeeckx, P. [European Commission JRC, Institute for Reference Materials and Measurements, Geel (Belgium); Berthoumieux, E.; Fraval, K.; Gunsing, F. [CEA/Saclay - IRFU, Gif-sur-Yvette (France); Billowes, J.; Ware, T.; Wright, T. [University of Manchester, Manchester (United Kingdom); Boccone, V.; Brugger, M.; Calviani, M.; Cerutti, F.; Chiaveri, E.; Chin, M.; Ferrari, A.; Guerrero, C.; Losito, R.; Roman, F.; Rubbia, C.; Tsinganis, A.; Versaci, R.; Vlachoudis, V.; Weiss, C. [CERN, Geneva (Switzerland); Calvino, F.; Cortes, G.; Gomez-Hornillos, M.B.; Riego, A. [Universitat Politecnica de Catalunya, Barcelona (Spain); Carrapico, C.; Goncalves, I.F.; Sarmento, R.; Vaz, P. [Universidade de Lisboa, C2TN-Instituto Superior Tecnico, Lisboa (Portugal); Cortes-Giraldo, M.A.; Praena, J.; Quesada, J. [Universidad de Sevilla, Sevilla (Spain); Cosentino, L.; Finocchiaro, P. [INFN - Laboratori Nazionali del Sud, Catania (Italy); Diakaki, M.; Karadimos, D.; Kokkoris, M.; Vlastou, R. [National Technical University of Athens (NTUA), Athens (Greece); Domingo-Pardo, C.; Giubrone, G.; Tain, J.L. [CSIC-Universidad de Valencia, Instituto de Fisica Corpuscular, Valencia (Spain); Dressler, R.; Heinitz, S.; Kivel, N.; Schumann, D. [Paul Scherrer Institut, Villigen (Switzerland); Duran, I.; Tarrio, D. [Universidade de Santiago de Compostela, Santiago de Compostela (Spain); Eleftheriadis, C.; Manousos, A. [Aristotle University of Thessaloniki, Thessaloniki (Greece); Ganesan, S.; Gurusamy, P.; Saxena, A. [Bhabha Atomic Research Centre (BARC), Mumbai (India); Griesmayer, E.; Jericha, E.; Leeb, H. [Atominstitut der Oesterreichischen Universitaeten, Technische Universitaet Wien, Wien (Austria); Jenkins, D.G.; Vermeulen, M.J. [University of York, York, Heslington (United Kingdom); Kaeppeler, F. [Karlsruhe Institute of Technology (KIT), Institut fuer Kernphysik, Karlsruhe (Germany); Lo Meo, S. [Istituto Nazionale di Fisica Nucleare, Bologna (Italy); ENEA, Bologna (Italy); Massimi, C.; Mingrone, F.; Vannini, G. [Dipartimento di Fisica, Universita di Bologna (IT); INFN, Bologna (IT); Mastinu, P. [Laboratori Nazionali di Legnaro, Istituto Nazionale di Fisica Nucleare, Legnaro (IT); Milazzo, P.M. [Istituto Nazionale di Fisica Nucleare, Trieste (IT); Mirea, M. [Horia Hulubei National Institute of Physics and Nuclear Engineering - IFIN HH, Magurele (RO); Musumarra, A. [Universita di Catania, Dipartimento di Fisica e Astronomia DFA, Catania (IT); INFN-Laboratori Nazionali del Sud, Catania (IT); Paradela, C. [European Commission JRC, Institute for Reference Materials and Measurements, Geel (BE); Universidade de Santiago de Compostela, Santiago de Compostela (ES); Pavlik, A. [Faculty of Physics, University of Vienna, Wien (AT); Rauscher, T. [University of Hertfordshire, Centre for Astrophysics Research, School of Physics, Astronomy and Mathematics, Hatfield (GB); University of Basel, Department of Physics, Basel (CH); Wallner, A. [Faculty of Physics, University of Vienna, Wien (AT); Australian National University, Research School of Physics and Engineering, Canberra (AU)

    2016-04-15

    The integral measurement of the {sup 12}C(n, p){sup 12}B reaction was performed at the neutron time-of-flight facility nTOF at CERN. The total number of {sup 12}B nuclei produced per neutron pulse of the nTOF beam was determined using the activation technique in combination with a time-of-flight technique. The cross section is integrated over the nTOF neutron energy spectrum from reaction threshold at 13.6 MeV to 10 GeV. Having been measured up to 1GeV on basis of the {sup 235}U(n, f) reaction, the neutron energy spectrum above 200 MeV has been re-evaluated due to the recent extension of the cross section reference for this particular reaction, which is otherwise considered a standard up to 200 MeV. The results from the dedicated GEANT4 simulations have been used to evaluate the neutron flux from 1 GeV up to 10 GeV. The experimental results related to the {sup 12}C(n, p){sup 12}B reaction are compared with the evaluated cross sections from major libraries and with the predictions of different GEANT4 models, which mostly underestimate the {sup 12}B production. On the contrary, a good reproduction of the integral cross section derived from measurements is obtained with TALYS-1.6 calculations, with optimized parameters. (orig.)

  2. Commissioning and operational results of helium refrigeration system at JLab for the 12GeV upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Knudsen, Peter N. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Ganni, Venkatarao [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Dixon, Kelly D. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Norton, Robert O. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Creel, Jonathan D. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2015-12-01

    The new 4.5 K refrigerator system at the Jefferson Lab (JLab) Central Helium Liquefier (CHL-2) for the 12 GeV upgrade was commissioned in late spring of 2013, following the commissioning of the new compressor system, and has been supporting 12 GeV LINAC commissioning since that time. Six design modes were tested during commissioning, consisting of a maximum capacity, nominal capacity, maximum liquefaction, maximum refrigeration, maximum fill and a stand-by/reduced load condition. The maximum capacity was designed to support a 238 g/s, 30 K and 1.16 bar cold compressor return flow, a 15 g/s, 4.5 K liquefaction load and a 12.6 kW, 35-55 K shield load. The other modes were selected to ensure proper component sizing and selection to allow the cold box to operate over a wide range of conditions and capacities. The cold box system is comprised of two physically independent cold boxes with interconnecting transfer-lines. The outside (upper) 300-60 K vertical cold box has no turbines and incorporates a liquid nitrogen pre-cooler and 80-K beds. The inside (lower) 60-4.5 K horizontal cold box houses seven turbines that are configured in four expansion stages including one Joule-Thompson expander and a 20-K bed. The helium compression system has five compressors to support three pressure levels in the cold box. This paper will summarize the analysis of the test data obtained over the wide range of operating conditions and capacities which were tested.

  3. Gold fillings unravel the vacancy role in the phase transition of GeTe

    Science.gov (United States)

    Feng, Jinlong; Xu, Meng; Wang, Xiaojie; Lin, Qi; Cheng, Xiaomin; Xu, Ming; Tong, Hao; Miao, Xiangshui

    2018-02-01

    Phase change memory (PCM) is an important candidate for future memory devices. The crystalline phase of PCM materials contains abundant intrinsic vacancies, which plays an important role in the rapid phase transition upon memory switching. However, few experimental efforts have been invested to study these invisible entities. In this work, Au dopants are alloyed into the crystalline GeTe to fill the intrinsic Ge vacancies so that the role of these vacancies in the amorphization of GeTe can be indirectly studied. As a result, the reduction of Ge vacancies induced by Au dopants hampers the amorphization of GeTe as the activation energy of this process becomes higher. This is because the vacancy-interrupted lattice can be "repaired" by Au dopants with the recovery of bond connectivity. Our results demonstrate the importance of vacancies in the phase transition of chalcogenides, and we employ the percolation theory to explain the impact of these intrinsic defects on this vacancy-ridden crystal quantitatively. Specifically, the threshold of amorphization increases with the decrease in vacancies. The understanding of the vacancy effect sheds light on the long-standing puzzle of the mechanism of ultra-fast phase transition in PCMs. It also paves the way for designing low-power-consumption electronic devices by reducing the threshold of amorphization in chalcogenides.

  4. On the chemical synthesis route to bulk-scale skutterudite materials

    DEFF Research Database (Denmark)

    Tafti, Mohsen Y.; Saleemi, Mohsin; Han, Li

    2016-01-01

    In this article an alternative high yield route for the synthesis of CoSb3-based unfilled skutterudites is presented. Using low-melting temperature salts of the constituents, melting and mixing them homogeneously in a hydrophobic liquid with postprocessing of the powders we achieve a more intimat......, compaction of the powders with SPS technique provided a safe route to maintaining the nanopowder size and achieving low thermal conductivity (3 W/mK). The proposed method can easily be scaled up and adopted by the industry.......In this article an alternative high yield route for the synthesis of CoSb3-based unfilled skutterudites is presented. Using low-melting temperature salts of the constituents, melting and mixing them homogeneously in a hydrophobic liquid with postprocessing of the powders we achieve a more...

  5. Mechanical Property Analysis in the Retracted Pin-Tool (RPT) Region of Friction Stir Welded (FSW) Aluminum Lithium 2195

    Science.gov (United States)

    Ding, R. Jeffrey; Oelgoetz, Peter A.

    1999-01-01

    The "Auto-Adjustable Pin Tool for Friction Stir Welding", was developed at The Marshall Space Flight Center to address process deficiencies unique to the FSW process. The auto-adjustable pin tool, also called the retractable pin-tool (R.PT) automatically withdraws the welding probe of the pin-tool into the pin-tool's shoulder. The primary function of the auto-adjustable pin-tool is to allow for keyhole closeout, necessary for circumferential welding and localized weld repair, and, automated pin-length adjustment for the welding of tapered material thickness. An overview of the RPT hardware is presented. The paper follows with studies conducted using the RPT. The RPT was used to simulate two capabilities; welding tapered material thickness and closing out the keyhole in a circumferential weld. The retracted pin-tool regions in aluminum- lithium 2195 friction stir weldments were studied through mechanical property testing and metallurgical sectioning. Correlation's can be =de between retractable pin-tool programmed parameters, process parameters, microstructure, and resulting weld quality.

  6. Synthesis and structure of novel lithium-ion conductor Li{sub 7}Ge{sub 3}PS{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, Yuki [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Suzuki, Kota [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Matsui, Naoki [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Hirayama, Masaaki [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Kanno, Ryoji, E-mail: kanno@echem.titech.ac.jp [Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan); Department of Chemical Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8502 (Japan)

    2017-02-15

    The novel lithium-ion conductor Li{sub 7}Ge{sub 3}PS{sub 12} was synthesized by slow cooling from the ternary Li{sub 2}S–GeS{sub 2}–P{sub 2}S{sub 5} system, and was shown to exhibit a cubic argyrodite-type structure. The phase composition was determined by varying the ratio of starting materials; the observed monophasic properties were close to those for the Li{sub 7}Ge{sub 3}PS{sub 12} composition. The lattice parameter (a =9.80192(3) Å) of Li{sub 7}Ge{sub 3}PS{sub 12} was slightly smaller than that of Li{sub 7}PS{sub 6} (a =9.993 Å), indicating that substitution of a Li cation by the smaller Ge cation contracted the cubic lattice. In addition, the novel structure consisted of a framework composed of four isolated (Ge/P)S{sub 4} tetrahedra. Li{sup +} ions occupied tetrahedral sites within the framework, forming a three-dimensional conduction pathway. Finally, Li{sub 7}Ge{sub 3}PS{sub 12} exhibited a high ionic conductivity of 1.1×10{sup −4} S cm{sup −1} at 25 °C and an activation energy of 25 kJ mol{sup −1}. - Graphical abstract: A novel Li{sub 7}Ge{sub 3}PS{sub 12} solid lithium ion conductor, with cubic argyrodite strucuture, shows high ion conductivity of 1.1×10{sup –4} S cm{sup –1} with an activation energy of 25 kJ mol{sup –1}. The argyrodite structure consists of (Ge/P)S{sub 4} tetrahedra units along with partial occupation of lithium and germanium at 48 h site. - Highlights: • A novel lithium-ion conductor Li{sub 7}Ge{sub 3}PS{sub 12} was detected. • This was achieved through slow cooling of the ternary Li{sub 2}S–GeS{sub 2}–P{sub 2}S{sub 5} system. • This novel conductor revealed a cubic argyrodite-type structure. • Li{sub 7}Ge{sub 3}PS{sub 12} exhibited a high ionic conductivity of 1.1×10{sup −4} S cm{sup −1} at 25 °C. • These properties will aid in the design of superior lithium-ion conductors.

  7. Field-orientation dependence of the specific heat of PrOs4Sb12

    International Nuclear Information System (INIS)

    Custers, Jeroen; Namai, Yukie; Tayama, Takashi; Sakakibara, Toshiro; Sugawara, Hitoshi; Aoki, Yuji; Sato, Hideyuki

    2006-01-01

    The superconducting (SC) gap of the Pr-based skutterudite PrOs 4 Sb 12 has been investigated by means of field-angle-dependent specific heat C(H,φ) experiments. At fixed temperatures, H was varied and rotated in the basal planes. A 4-fold oscillation of C(H,φ) is observed in the entire H-T SC phase diagram. The minima are located along the [100] directions suggesting the excistence of gap nodes or minima along these directions. The oscillation amplitude vertical bar A vertical bar becomes maximum at H/H c2 ∼0.3. Below, vertical bar A vertical bar->0. The temperature variation of vertical bar A vertical bar follows a quadratic dependence

  8. Inclusive γ, π0, K0, and Λ production in 12.4-GeV/c pp interactions

    International Nuclear Information System (INIS)

    Jaeger, K.; Campbell, J.; Charlton, G.; Swanson, D.; Fu, C.; Rubin, H.A.; Glasser, R.G.; Koetke, D.; Whitmore, J.

    1975-01-01

    In an exposure of the Argonne National Laboratory 12-foot hydrogen bubble chamber to a beam of 12.4-GeV/c protons, we have measured the total and differential cross sections for the inclusive reactions p + p → γ + X, π 0 + X, K 0 + X, and Λ + X, as well as estimates for the inclusive eta and Σ 0 cross sections. We present the average number of π 0 , K 0 , and Λ as a function of the associated charge multiplicity. We observe that the average charge multiplicity in pp collisions is the same whether or not a π 0 , K 0 , or Λ is also produced in the interaction. Invariant cross sections are presented as a function of P/subT/ 2 and x, the Feynman scaling variable. The π 0 differential cross sections are consistent with the relation (dsigma/dP)(π 0 ) = 1 / 2 [(dsigma/dP)(π + ) + (dsigma/dP)(π - )]/2 for all pion momenta P. The differential cross section for Λ production indicates a break in the distribution of vertical-bart - t/sub min/vertical-bar = 1.4 (GeV/c) 2 . The polarization of the Λ's is found to be consistent with zero for all values of x

  9. On centrality and rapidity dependences of transverse momentum spectra of negative pions in 12C + 12C collisions at 4.2 GeV/c per nucleon

    International Nuclear Information System (INIS)

    Iqbal, A.; Haseeb, M.Q.; Olimov, K.K.; Khan, Imran; Yuldashev, B.S.

    2014-01-01

    The dependences of the experimental transverse momentum spectra of the negative pions, produced in minimum bias 12 C + 12 C collisions at a momentum of 4.2A GeV/c, on the collision centrality and the pion rapidity range were studied. To analyze quantitatively the change in the p t spectra of π - mesons with the changes of collision centrality and pion rapidity range, the extracted p t spectra were fitted by Hagedorn, Boltzmann, simple exponential and Gaussian functions. The values of the extracted spectral temperatures T 1 and T 2 were consistently larger for the p t spectra of π - mesons coming from midrapidity range as compared to those of the negative pions generated in the target and projectile fragmentation regions. The spectral temperatures T 1 and T 2 extracted from fitting the p t spectra of π - mesons in range p t = 0.1–1.2 GeV/c practically coincided with each other in peripheral, semicentral and central 12 C + 12 C collision events, and thus did not show any collision centrality dependence. However, the values of T 1 and T 2 extracted from fitting in range p t = 0.1–0.7 GeV/c were consistently and noticeably larger in case of central collisions as compared to peripheral and semicentral 12 C + 12 C collisions. Hagedorn and Boltzmann functions provided significantly better fits of the transverse momentum spectra of the negative pions with the physically acceptable values of the extracted temperatures as compared to Gaussian and simple exponential functions. (author)

  10. Crystal structure of LaFe5Ge3O15 = LaFe5[GeO4][Ge2O7]O4

    International Nuclear Information System (INIS)

    Genkina, E.A.; Maksimov, B.A.; Mill, B.V.

    1991-01-01

    The authors have determined the structure of a new lanthanum-iron germanate LaFe 5 [GeO 4 ][GeO 4 ][Ge 2 O 7 ]O 4 (a = 18.040(4), b = 17.012(4), c = 7.591(1) angstrom, V = 2330.2(9) angstrom 3 , Z = 8, ρ t = 4.99 g/cm 3 , space ground Cmca, 1976 I hkl ≥ 3 σ(I), R = 4.5%). The compound is interesting because the framework simultaneously contains ortho- and diorthogroups of Ge and because of a classical set of coordination numbers (4,5,6) characteristic of trivalent iron within the composition of one structure. The coordination polyhedron of La has nine vertices

  11. Structural and thermodynamic similarities of phases in the Li-Tt (Tt = Si, Ge) systems: redetermination of the lithium-rich side of the Li-Ge phase diagram and crystal structures of Li17Si4.0-xGex for x = 2.3, 3.1, 3.5, and 4 as well as Li4.1Ge.

    Science.gov (United States)

    Zeilinger, Michael; Fässler, Thomas F

    2014-10-28

    A reinvestigation of the lithium-rich section of the Li-Ge phase diagram reveals the existence of two new phases, Li17Ge4 and Li4.10Ge (Li16.38Ge4). Their structures are determined by X-ray diffraction experiments of large single crystals obtained from equilibrated melts with compositions Li95Ge5 and Li85Ge15. Excess melt is subsequently removed through isothermal centrifugation at 400 °C and 530 °C, respectively. Li17Ge4 crystallizes in the space group F4[combining macron]3m (a = 18.8521(3) Å, V = 6700.1(2) Å(3), Z = 20, T = 298 K) and Li4.10Ge (Li16.38Ge4) in Cmcm (a = 4.5511(2) Å, b = 22.0862(7) Å, c = 13.2751(4) Å, V = 1334.37(8) Å(3), Z = 16, T = 123 K). Both phases are isotypic with their Si counterparts and are further representative of the Li17Pb4 and Li4.11Si structure types. Additionally, the solid solutions Li17Si4-xGex follows Vegard's law. A comparison of the GeLin coordination polyhedra shows that isolated Ge atoms are 13- and 14-coordinated in Li17Ge4, whereas in Li16.38Ge4 the Ge atoms possess coordination numbers 12 and 13. Regarding the thermodynamic stability, Li16.38Ge4 is assigned a high-temperature phase existing between ∼400 °C and 627 °C, whereas Li17Ge4 decomposes peritectically at 520-522 °C. Additionally, the decomposition of Li16.38Ge4 below ∼400 °C was found to be very sluggish. These findings are manifested by differential scanning calorimetry, long-term annealing experiments and the results from melt equilibration experiments. Interestingly, the thermodynamic properties of the lithium-rich tetrelides Li17Tt4 and Li4.1Tt (Li16.4Tt4) are very similar (Tt = Si, Ge). Besides Li15Tt4, Li14Tt6, Li12Tt7, and LiTt, the title compounds are further examples of isotypic tetrelides in the systems Li-Tt.

  12. Quasi-elastic cross sections for 1GeV proton incident on {sup 4}He and {sup 12}C

    Energy Technology Data Exchange (ETDEWEB)

    Nishimura, M.; Nakamoto, T.; Shigyo, N. [Kyushu Univ., Fukuoka (Japan). Faculty of Engineering] [and others

    1997-03-01

    The experiment of p-n quasi-elastic scattering cross sections was carried out for 1GeV protons on {sup 4}He and {sup 12}C. The coincident measurement was made at c.m. angles of {+-} 90deg. The experiment was simulated by the use of HETC (High Energy Transport Code). It was examined to apply the p-n quasi-elastic scattering cross sections to neutron flux measurement. (author)

  13. Average number of neutrons in π-p, π-n, and π-12C interactions at 4 GeV/c

    International Nuclear Information System (INIS)

    Bekmirzaev, R.N.; Grishin, V.G.; Muminov, M.M.; Suvanov, I.; Trka, Z.; Trkova, J.

    1984-01-01

    The average numbers of secondary neutrons in π - p, π - n, and π -12 C interactions at 4 GeV/c have been determined by investigating secondary neutral stars produced by neutrons in a propane bubble chamber. The following values were obtained for the charge-exchange coefficients: α(p→n) = 0.39 +- 0.04 and α(n→p) = 0.37 +- 0.08

  14. First-principles study of defect formation in a photovoltaic semiconductor Cu2ZnGeSe4

    Science.gov (United States)

    Nishihara, Hironori; Maeda, Tsuyoshi; Wada, Takahiro

    2018-02-01

    The formation energies of neutral Cu, Zn, Ge, and Se vacancies in kesterite-type Cu2ZnGeSe4 were evaluated by first-principles pseudopotential calculations using plane-wave basis functions. The calculations were performed at typical points in Cu-(Zn1/2Ge1/2)-Se and Cu3Se2-ZnSe-GeSe2 pseudoternary phase diagrams for Cu2ZnGeSe4. The results were compared with those for Cu2ZnSnSe4, Cu2ZnGeS4, and Cu2ZnSnS4 calculated using the same version of the CASTEP program code. The results indicate that Cu vacancies are easily formed in Cu2ZnGeSe4 under the Cu-poor condition as in the above compounds and CuInSe2, suggesting that Cu2ZnGeSe4 is also a preferable p-type absorber material for thin-film solar cells. The formation energies of possible antisite defects, such as CuZn and CuGe, and of possible complex defects, such as CuZn+ZnCu, were also calculated and compared within the above materials. The antisite defect of CuZn, which has the smallest formation energy within the possible defects, is concluded to be the most hardly formed in Cu2ZnGeSe4 among the compounds.

  15. Partial inelasticity coefficients of negative pions in p, d, α, 12C + 12C and p, 12C + 181Ta collisions at 4.2 GeV/c per nucleon

    International Nuclear Information System (INIS)

    Olimov, K.K.; Olimov, K.; Gulamov, K.G.; Olimov, A.K.; Lutpullaev, S.L.; Yuldashev, B.S.; Haseeb, M.Q.

    2015-01-01

    The partial inelasticity coefficients of the negative pions were determined in minimum bias p, d, α, 12 C + 12 C and p, 12 C + 18 Ta collisions at 4.2A GeV/c taking into account the average number of participant nucleons of a projectile nucleus. In nucleus–nucleus collisions, the average values of partial inelasticity coefficients (〈K(π-)〉) of the negative pions did not depend on the mass numbers of projectile and target nuclei. Increase of 〈K(π - )〉 in going from p + 12 C to d, α, 12 C + 12 C collisions was due to an additional source of production of fast negative pions in nucleus–nucleus collisions — a charge exchange conversion of one or more neutrons of a projectile nucleus into a proton and π - . Linking the experimental results of the present analysis at intermediate energy with those obtained at high and ultra-high energies, it was concluded that the average values of partial inelasticity coefficients of pions in nucleon–nucleus and nucleus–nucleus collisions manifest a transitive behavior. At intermediate energies, the values of 〈K(π - )〉 were smaller by a factor of two and more as compared to those at high energies, and they increased further with increasing incident energy, reaching a plateau at E 0 > 100A GeV. (author)

  16. Thermoelectric properties of RuSb2Te ternary skutterudites

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Jiří; Plecháček, T.; Drašar, Č.; Laufek, F.

    2013-01-01

    Roč. 42, č. 7 (2013), s. 1864-1869 ISSN 0361-5235 R&D Projects: GA ČR GAP108/10/1315 Institutional support: RVO:61389013 Keywords : RuSb2Te * ternary skutterudite * doping Subject RIV: CA - Inorganic Chemistry Impact factor: 1.675, year: 2013 http://link.springer.com/article/10.1007/s11664-012-2451-5

  17. Monoclinic superstructure of Pr{sub 3}Rh{sub 4}Ge{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Vosswinkel, Daniel; Hoffmann, Rolf-Dieter; Greiwe, Magnus; Eul, Matthias; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2016-07-01

    Pr{sub 3}Rh{sub 4}Ge{sub 4} was synthesized by melting of the elements in an arc-melting furnace followed by annealing in a sealed tantalum ampoule in a muffle furnace. Structure refinement was based on temperature dependent single-crystal X-ray diffractometer data. At ambient temperature Pr{sub 3}Rh{sub 4}Ge{sub 4} adopts the U{sub 3}Ni{sub 4}Si{sub 4} type structure with strongly enhanced anisotropic displacement parameters for Rh1. Below 230 K additional reflections start to appear and at 110 K the structure could be described with the (3+1)D superspace group I2/m(α0γ)00; α=1/2, γ=1/2; (Z=2). This commensurately modulated structure could be refined with 1448 F{sup 2} values, 39 variables and residuals of wR=0.0417 for the main reflections and wR=0.1520 for the satellites of 1{sup st} order, [a=408.36(2), b=421.12(3) and c=2504.4(2) pm]. The commensurate description could be transformed to a 3D supercell with space group A2/m and Z=4: a=816.72(2), b=421.12(3), c=2537.5(1) pm, β=99.26(1) , 1448 F{sup 2} values, 69 variables and wR=0.0499. The relation of the U{sub 3}Ni{sub 4}Si{sub 4} type structure, the (3+1)D modulated and the 3D supercell is discussed on the basis of a group-subgroup scheme. Temperature dependent magnetic susceptibility data reveal Curie-Weiss paramagnetism with an experimental moment of 3.72(2) μ{sub B}/Pr atom and a Weiss constant of -12.6(5) K. No magnetic ordering is evident down to 3 K.

  18. Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy

    Directory of Open Access Journals (Sweden)

    Zélia Soares Macedo

    2003-12-01

    Full Text Available Bi4Ge3O12 (bismuth germanate - BGO single crystals were produced by the Czochralski technique and their electrical and dielectric properties were investigated by impedance spectroscopy. The isothermal ac measurements were performed for temperatures from room temperature up to 750 °C, but only the data taken above 500 °C presented a complete semicircle in the complex impedance diagrams. Experimental data were fitted to a parallel RC equivalent circuit, and the electrical conductivity was obtained from the resistivity values. Conductivity values from 5.4 × 10(9 to 4.3 × 10-7 S/cm were found in the temperature range of 500 to 750 °C. This electrical conductivity is thermally activated, following the Arrhenius law with an apparent activation energy of (1.41 ± 0.04 eV. The dielectric properties of BGO single crystal were also studied for the same temperature interval. Permittivity values of 20 ± 2 for frequencies higher than 10³ Hz and a low-frequency dispersion were observed. Both electric and dielectric behavior of BGO are typical of systems in which the conduction mechanism dominates the dielectric response.

  19. Dielectron production in {sup 12}C+{sup 12}C collisions at 1 GeV per nucleon; Dielektronenproduktion in {sup 12}C+{sup 12}C Kollisionen bei 1 GeV pro Nukleon

    Energy Technology Data Exchange (ETDEWEB)

    Pachmayer, Yvonne C.

    2008-08-22

    This thesis contains the experimental results on dielectron production in {sup 12}C+{sup 12}C collisions at 1 GeV/u recorded with HADES. Within this work, the analysis is demonstrated, showing that leptons are efficiently reconstructed and hadrons very well discriminated. The described pair analysis shows that the combinatorial background is successfully reduced and the amount of true electron-positron pairs is not decreased. After subtracting the combinatorial background, the efficiency-corrected and normalized invariant-mass, transverse momentum and rapidity distributions of the dileptons are investigated. In the invariant-mass region 0.2-0.6 GeV/c{sup 2} the measured pair yield shows a strong excess above the contribution expected from hadron decays after freeze-out according to predictions. Together with the results obtained in {sup 12}C+{sup 12}C at 2 GeV/u it becomes evident that the overshoot of the data increases with decreasing beam energy. A detailed analysis shows that the beam energy dependence of the excess yield, i.e. the pair yield above the known eta contribution, integrated over the 0.15-0.5 GeV/c{sup 2} mass range, scales like pion production. (orig.)

  20. Cluster self-organization of germanate systems: suprapolyhedral precursor clusters and self-assembly of K2Nd4Ge4O13(OH)4, K2YbGe4O10(OH), K2Sc2Ge2O7(OH)2, and KScGe2O6(PYR)

    International Nuclear Information System (INIS)

    Ilyushin, G.D.; Dem'yanets, L.N.

    2008-01-01

    One performed the computerized (the TOPOS 4.0 software package) geometric and topological analyses of all known types of K, TR-germanates (TR = La-Lu, Y, Sc, In). The skeleton structure are shown as three-dimensional 3D, K, TR, Ge-patterns (graphs) with remote oxygen atoms. TR 4 3 3 4 3 3 + T 4 3 4 3, K 2 YbGe 4 O 14 (OH) pattern, TR 6 6 3 6 + T1 6 8 6 + T2 3 6 8, K 2 Sc 2 Ge 2 O 7 (OH) 2 , TR 6 4 6 4 + T 6 4 6 and KScGe 2 O 6 - TR 6 6 3 6 3 4 + T1 6 3 6 + T2 6 4 3 patterns served as crystal-forming 2D TR,Ge-patterns for K 2 Nd 4 Ge 4 O 13 (OH) 4 . One performed the 3D-simulation of the mechanism of self-arrangement of the crystalline structures: cluster-precursor - parent chain - microlayer - microskeleton (super-precursor). Within K 2 Nd 4 Ge 4 O 13 (OH) 4 , K 2 Sc 2 Ge 2 O 7 (OH) 2 and KScGe 2 O 6 one identified the invariant type of the cyclic hexapolyhedral cluster-precursor consisting of TR-octahedrons linked by diorthogroups stabilized by K atoms. For K 2 Nd 4 Ge 4 O 13 (OH) 4 one determined the type of the cyclic tetrapolyhedral cluster-precursor consisting of TR-octavertices linked by tetrahedrons. The cluster CN within the layer just for KScGe 2 O 6 water-free germanate (the PYR pyroxene analog) is equal to 6 (the maximum possible value), while in the rest OH-containing germanates it constitutes 4. One studied the formation mechanism of Ge-radicals in the form of Ge 2 O 7 and Ge 4 O 13 groupings, GeO 3 chain and the tubular structure consisting of Ge 8 O 20 fixed cyclic groupings [ru

  1. Study of the pπ- system produced in reaction K+n→K+π-p at 8.25GeV/c and comparison with data at 4.6 and 12GeV/c

    International Nuclear Information System (INIS)

    Vignaud, D.; Ginestet, J.; Burlaud, D.; Sene, M.

    1975-01-01

    The fragmentation of the neutron into pπ - induced by incident K + of 8.25GeV/c is studied using data from the CERN 2m deuterium bubble chamber and compared with data at 4.6 and 12GeV/c. The pπ - low mass enhancement below 1.85GeV/c is analyzed and the major part exhibits the properties expected for diffraction dissociation. The presence of resonances is discussed. The data are fairly well represented by a double Regge exchange model involving pion and Pomeron exchanges. The violation of the s-channel and t-channel helicity conservation is observed and compared to the s-channel description of Humble [fr

  2. First-principles calculations of the elastic, electronic, and optical properties of the filled skutterudites CeFe4P12 and ThFe4P12

    Czech Academy of Sciences Publication Activity Database

    Khenata, R.; Bouhemadou, A.; Reshak, Ali H; Ahmed, R.; Rached, D.; Al-Douri, Y.

    2007-01-01

    Roč. 60, č. 4 (2007), s. 463-468 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z60870520 Keywords : MAGNETIC-PROPERTIES Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.172, year: 2007

  3. Atomistic explanation of brittle failure of thermoelectric skutterudite CoSb3

    International Nuclear Information System (INIS)

    Li, Guodong; An, Qi; Goddard, William A.; Hanus, Riley; Zhai, Pengcheng; Zhang, Qingjie; Snyder, G. Jeffrey

    2016-01-01

    CoSb 3 based skutterudite thermoelectric material has superior thermoelectric properties, but the low fracture toughness prevents its widespread commercial application. To determine the origin of its brittle failure, we examined the response of shear deformation in CoSb 3 along the most plausible slip system (010)/<100>, using large-scale molecular dynamics simulations. We find that the brittle failure of CoSb 3 arises from the formation of shear bands due to the destruction of Sb4-rings and the slippage of Co-octahedraes. This leads to the breakage of Co-octahedraes and cavitation, resulting in the crack opening and mechanical failure.

  4. The germanides Er{sub 5}Pd{sub 4}Ge{sub 8} and Tm{sub 5}Pd{sub 4}Ge{sub 8}. 3D [Pd{sub 4}Ge{sub 8}] polyanions with Ge{sub 2} dumb-bells and Ge{sub 4} chains in cis-conformation

    Energy Technology Data Exchange (ETDEWEB)

    Heying, Birgit; Rodewald, Ute C.; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

    2017-07-01

    Tm{sub 5}Pd{sub 4}Ge{sub 8} was synthesized by melting of the elements in an arc-melting furnace. The new germanide was characterized by powder and single-crystal X-ray diffraction: own structure type, P2{sub 1}/m, a=574.3(1), b=1380.4(3), c=836.4(1) pm, β=107.57(2) , V=0.6321 nm{sup 3}, wR2=0.0578, 2533 F{sup 2} values, 86 variables. The palladium and germanium atoms built up a three-dimensional [Pd{sub 4}Ge{sub 8}]{sup 15-} polyanionic network which contains a unique germanium substructure composed of the Zintl anions Ge{sub 2}{sup 6-} dumb-bells and Ge{sub 4}{sup 10-} chains in cis-conformation. The palladium atoms within the network have distorted square pyramidal germanium coordination. The three crystallographically independent thulium atoms have coordination numbers 15, 16 and 17 with partial motifs of the Frank-Kasper type polyhedra. The isotypic germanide Er{sub 5}Pd{sub 4}Ge{sub 8} forms only after annealing the arc-melted sample at 1070 K for 1 week: a=575.14(9), b=1386.3(3), c=838.4(1) pm, β=107.51(2) , V=0.6375 nm{sup 3}.

  5. Synthesis and structure of Li{sub 4}GeS{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Matsushita, Y [National Inst. of Materials and Chemical Research, Tsukuba (Japan). High Pressure Lab.; Kanatzidis, M G [Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry

    1998-01-01

    The compound Li{sub 4}GeS{sub 4} has been prepared as transparent, light yellow moisture-sensitive crystals. Li{sub 4}GeS{sub 4} belongs to the space group Pnma with a = 14.107(6) A, b = 7.770(3) A and c = 6.162(2) A. The crystal structure was solved by direct-methods. The final R and R{sub w}-values are 1.85 and 1.65% for 866 observed reflections. The Li{sub 4}GeS{sub 4} structure has three crystallographically independent lithium sites and one germanium site. The lithium atoms adopt two different coordination types. The Li1 atom is coordinated to five sulfur atoms in a square pyramidal geometry, while the Li2 and Li3 atoms have distorted tetrahedral coordination. The Ge atom is tetrahedrally coordinated by four sulfur atoms and is found as [GeS{sub 4}]{sup 4-} units. The anisotropic three-dimensional crystal structure of Li{sub 4}GeS{sub 4} is described. (orig.) 57 refs.

  6. 12 GeV detector technology at Jefferson Lab

    Energy Technology Data Exchange (ETDEWEB)

    Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

    2013-04-19

    The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

  7. Dielectron production in 12C+12C collisions at 1 GeV per nucleon

    International Nuclear Information System (INIS)

    Pachmayer, Yvonne C.

    2008-01-01

    This thesis contains the experimental results on dielectron production in 12 C+ 12 C collisions at 1 GeV/u recorded with HADES. Within this work, the analysis is demonstrated, showing that leptons are efficiently reconstructed and hadrons very well discriminated. The described pair analysis shows that the combinatorial background is successfully reduced and the amount of true electron-positron pairs is not decreased. After subtracting the combinatorial background, the efficiency-corrected and normalized invariant-mass, transverse momentum and rapidity distributions of the dileptons are investigated. In the invariant-mass region 0.2-0.6 GeV/c 2 the measured pair yield shows a strong excess above the contribution expected from hadron decays after freeze-out according to predictions. Together with the results obtained in 12 C+ 12 C at 2 GeV/u it becomes evident that the overshoot of the data increases with decreasing beam energy. A detailed analysis shows that the beam energy dependence of the excess yield, i.e. the pair yield above the known eta contribution, integrated over the 0.15-0.5 GeV/c 2 mass range, scales like pion production. (orig.)

  8. Influence of thickness on properties of YbxCo4Sb12 layers prepared by laser ablation

    Czech Academy of Sciences Publication Activity Database

    Zeipl, Radek; Jelínek, M.; Kocourek, Tomáš; Navrátil, Jiří; Yatskiv, Roman; Josieková, M.; Leshkov, Sergey; Jurek, Karel; Walachová, Jarmila

    2010-01-01

    Roč. 12, č. 3 (2010), s. 572-575 ISSN 1454-4164 R&D Projects: GA ČR GA203/07/0267 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z40500505; CEZ:AV0Z10100521 Keywords : thermoelectrics * thin layers * skutterudites Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering Impact factor: 0.412, year: 2010

  9. Negative-binomial multiplicity distributions in the interaction of light ions with 12C at 4.2 GeV/c

    International Nuclear Information System (INIS)

    Tucholski, A.; Bogdanowicz, J.; Moroz, Z.; Wojtkowska, J.

    1989-01-01

    Multiplicity distribution of single-charged particles in the interaction of p, d, α and 12 C projectiles with C target nuclei at 4.2 GeV/c were analysed in terms of the negative binomial distribution. The experimental data obtained by the Dubna Propane Bubble Chamber Group were used. It is shown that the experimental distributions are satisfactorily described by the negative-binomial distribution. Values of the parameters of these distributions are discussed. (orig.)

  10. Two superstructures of Ce{sub 3}Rh{sub 4}Ge{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Vosswinkel, Daniel; Hoffmann, Rolf-Dieter [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Svitlyk, Volodymyr [European Synchrotron Radiation Facility, Grenoble (France); and others

    2018-04-01

    Two different samples of Ce{sub 3}Rh{sub 4}Ge{sub 4} were synthesized from different starting compositions by melting of the elements in an arc-melting furnace followed by annealing sequences in a sealed tantalum ampoule in a muffle furnace. The structures of two different stacking variants were refined on the basis of temperature dependent single-crystal X-ray diffractometer data. At high temperature Ce{sub 3}Rh{sub 4}Ge{sub 4} adopts the U{sub 3}Ni{sub 4}Si{sub 4} type structure with strongly enhanced anisotropic displacement parameters for the Rh1 atoms. For the two different crystals, additional reflections start to appear at different temperatures. The first crystal showed additional reflections already at room temperature (stacking variant I) and the second one showed additional reflections emerging below 270 K (stacking variant II). Stacking variant I could be described with the (3+1)D superspace group I2/m(α0γ)00; α=1/2a*, γ=1/2c*; (Z=2), 1252 F{sup 2} values, 48 variables, wR=0.0306 for the main and wR=0.0527 for 440 1{sup st} order satellite reflections, similar to Pr{sub 3}Rh{sub 4}Ge{sub 4}. For stacking variant II the (3+1)D superspace group is Immm(α00)00s; α=1/2a*; (Z=2). The structure could be refined with 1261 F{sup 2} values, 53 variables and residuals of wR=0.0331 for the main reflections and wR=0.1755 (R1{sub obs}=0.0788) for the 1{sup st} order satellite reflections, [a=406.2(1), b=423.7(1) and c=2497.1(1) pm]. The commensurate description could be transformed to a three-dimensional (3D) supercell with space group Pnma and Z=4: a=812.5(1), b=423.7(1), c=2497.1(2) pm, 1261 F{sup 2} values, 69 variables and wR=0.0525. The relation of the U{sub 3}Ni{sub 4}Si{sub 4} type structure, the (3+1)D modulated and the 3D supercells are discussed on the basis of group-subgroup schemes. Ab initio electronic structure calculations are in line with the diffraction experiments, revealing the lowest total energy for the Pnma phase.

  11. Commissioning of the 123 MeV injector for 12 GeV CEBAF

    International Nuclear Information System (INIS)

    Wang, Yan; Hofler, Alicia S.; Kazimi, Reza

    2015-09-01

    The upgrade of CEBAF to 12GeV included modifications to the injector portion of the accelerator. These changes included the doubling of the injection energy and relocation of the final transport elements to accommodate changes in the CEBAF recirculation arcs. This paper will describe the design changes and the modelling of the new 12GeV CEBAF injector. Stray magnetic fields have been a known issue for the 6 GeV CEBAF injector, the results of modelling the new 12GeV injector and the resulting changes implemented to mitigate this issue are described in this paper. The results of beam commissioning of the injector are also presented.

  12. Synthesis and Characterization of the Quaternary Thio-aluminogermanates A(AlS2)(GeS2) (A = Na, K)

    KAUST Repository

    Al-Bloushi, Mohammed

    2015-05-27

    The quaternary thioaluminogermanates Na(AlS2)(GeS2) (1) and K(AlS2)(GeS2) (2) crystallize in the tetragonal space group I4/mcm (no. 140) with unit cell parameters a = 7.4274(11) Å, c = 5.8560(12) Å for Na(AlS2)(GeS2) and a = 7.8826(2) Å, c = 5.8642(4) Å for K(AlS2)(GeS2). The crystal structure comprises of one-dimensional [(AlS2)(GeS2)]- anionic chains with Al and Ge sharing the tetrahedral site. The alkali metal cations fill the square antiprismatic voids between chains. Both 1 and 2 are semiconductors with bandgap of around 3.6 eV and 3.5 eV, respectively. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. A 100 GeV SLAC Linac

    International Nuclear Information System (INIS)

    Farkas, Zoltan D

    2002-01-01

    The SLAC beam energy can be increased from the current 50 GeV to 100 GeV, if we change the operating frequency from the present 2856 MHz to 11424 MHz, using technology developed for the NLC. We replace the power distribution system with a proposed NLC distribution system as shown in Fig. 1. The four 3 meter s-band 820 nS fill time accelerator sections are replaced by six 2 meter x-band 120 nS fill time sections. Thus the accelerator length per klystron retains the same length, 12 meters. The 4050 65MW-3.5(micro)S klystrons are replaced by 75MW-1.5(micro)S permanent magnet klystrons developed here and in Japan. The present input to the klystrons would be multiplied by a factor of 4 and possibly amplified. The SLED [1] cavities have to be replaced. The increase in beam voltage is due to the higher elastance to group velocity ratio, higher compression ratio and higher unloaded to external Q ratio of the new SLED cavities. The average power input is reduced because of the narrower klystron pulse width and because the klystron electro-magnets are replaced by permanent magnets

  14. Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe4

    International Nuclear Information System (INIS)

    Prokofieva, Violetta K.; Pavlova, Lydia M.

    2014-01-01

    Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe 4 grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe 4 grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe 4 crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition

  15. CEBAF SRF Performance during Initial 12 GeV Commissioning

    International Nuclear Information System (INIS)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a Q L of 3x10 7 . Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  16. Photoinduced second harmonic generation of LaFe4Sb12near spin fluctuated critical points

    International Nuclear Information System (INIS)

    Nouneh, K.; Viennois, R.; Kityk, I.V.; Terki, F.; Charar, S.; Benet, S.; Paschen, S.

    2004-01-01

    The temperature dependence of the resistivity, the Seebeck coefficient and photoinduced second harmonic generation (PISHG) are studied near the quantum critical point in the skutterudite compound LaFe 4 Sb 12 , possessing increased spin fluctuations. We observed a large maximum of the PISHG at a temperature of about 15 K. The PISHG signal increases substantially below 35 K. We found a correlation between the temperature dependences of PISHG, resistivity and Seebeck coefficient. We proposed a phenomenological explanation for the occurrence of the PISHG signal in LaFe 4 Sb 12 implying strong spin fluctuations exist in this system, which may present some interest for the study of other spin fluctuation systems. Physical insight into the phenomenon observed is grounded in the participation of anharmonic electron-phonon and electron-paramagnon interactions stimulated by inducing light in the interactions with the photoexcited dipole moments. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. KNO type scaling of secondary charged particles produced in 4.5 a GeV 12C-nucleus collisions

    International Nuclear Information System (INIS)

    Khushnood, H.; Singh, Prithipal; Shukla, Praveen Prakash; Saleem Khan, M.

    2011-01-01

    Study of the secondary charged particles produced in heavy ion collisions is attracting a great deal of attention during the recent years. It is reported that the multiplicity distribution of secondary charged particles produced in high energy hadron-hadron and hadron-nucleus collisions Obey Koba, Nielson and Olesen (KNO) scaling. However, no attention has been paid to study the nature of the multiplicity distribution of secondary charged particles produced in relativistic heavy ions reactions. Thus, an attempt has been made to study the multiplicity distribution of secondary charged particles produced in 4.5 A GeV 12 C-nucleus interactions

  18. Three new chalcohalides, Ba4Ge2PbS8Br2, Ba4Ge2PbSe8Br2 and Ba4Ge2SnS8Br2: Syntheses, crystal structures, band gaps, and electronic structures

    International Nuclear Information System (INIS)

    Lin, Zuohong; Feng, Kai; Tu, Heng; Kang, Lei; Lin, Zheshuai; Yao, Jiyong; Wu, Yicheng

    2014-01-01

    Highlights: • Three new chalcohalides: Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have been synthesized. • The MQ 5 Br octahedra and GeQ 4 tetrahedra form a three-dimensional framework with Ba 2+ in the channels. • Band Gaps and electronic structures of the three compounds were studied. - Abstract: Single crystals of three new chalcohalides: Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have been synthesized for the first time. These isostructural compounds crystallize in the orthorhombic space group Pnma. In the structure, the tetra-valent Ge atom is tetrahedrally coordinated with four Q (Q = S, Se) atoms, while the bi-valent M atom (M = Pb, Sn) is coordinated with an obviously distorted octahedron of five Q (Q = S, Se) atoms and one Br atom, showing the stereochemical activity of the ns 2 lone pair electron. The MQ 5 Br (M = Sn, Pb; Q = S, Se) distorted octahedra and the GeQ 4 (Q = S, Se) tetrahedra are connected to each other to form a three-dimensional framework with channels occupied by Ba 2+ cations. Based on UV–vis–NIR spectroscopy measurements and the electronic structure calculations, Ba 4 Ge 2 PbS 8 Br 2 , Ba 4 Ge 2 PbSe 8 Br 2 and Ba 4 Ge 2 SnS 8 Br 2 have indirect band gaps of 2.054, 1.952, and 2.066 eV respectively, which are mainly determined by the orbitals from the Ge, M and Q atoms (M = Pb, Sn; Q = S, Se)

  19. Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

    Science.gov (United States)

    Nahali, Masoud; Mehri, Ali

    2018-06-01

    The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

  20. Itinerant 5f electrons and the Fermi surface properties in neptunium compounds

    International Nuclear Information System (INIS)

    Aoki, D.; Yamagami, H.; Homma, Y.; Sakai, H.; Ikeda, S.; Shiokawa, Y.; Yamamoto, E.; Nakamura, A.; Haga, Y.; Settai, R.; Onuki, Y.

    2007-01-01

    We grew high-quality single crystals of NpGe 3 , NpIn 3 , NpCoGa 5 , NpRhGa 5 and NpFe 4 P 12 by the flux method, and measured the de Haas-van Alphen (dHvA) effect, magnetic susceptibility and resistivity. The results of dHvA experiments in NpGe 3 , NpCoGa 5 and NpRhGa 5 were well explained by the energy band calculation based on the 5f-itinerant model, while the topology of Fermi surfaces in NpIn 3 is similar to those of LaIn 3 , implying the 5f-localized nature of NpIn 3 . The skutterudite compound NpFe 4 P 12 is a low carrier system with the 5f 3 configuration

  1. X-ray spectra and electronic structure of the Ca3Ga2Ge12 compound

    Science.gov (United States)

    Shcherba, I. D.; Kostyk, L. V.; Noga, H.; Bekenov, L. V.; Uskokovich, D.; Jatsyk, B. M.

    2017-09-01

    The band structure of Ca3Ga2Ge12 with the garnet structure has been determined for the first time by X-ray emission and photoelectron spectroscopy. It has been established that the bottom of the valence band is formed by Ge d states, which are not dominant in the chemical bonding. Strong hybridization of oxygen 2s states with 4p states of Ga and Ge revealed by the presence of an extra structure in the X-ray emission spectra has been found. The middle of the valence band has been demonstrated to be occupied by d states of Ga, while Ga and Ge 4рstates with a considerable admixture of oxygen 2p states form the top of the valence band.

  2. Evaporation induced diameter control in fiber crystal growth by micro-pulling-down technique: Bi{sub 4}Ge{sub 3}O{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Chani, V.; Lebbou, K.; Hautefeuille, B.; Tillement, O. [Physical Chemistry of Luminescent Materials, Claude Bernard Lyon1 University, CNRS UMR 5620, Bat. A. Kastler, 10 rue Ampere, 69622 Villeurbanne Cedex (France); Fourmigue, J.M. [FiberCryst, 23 rue Royale, F-69001 Lyon (France)

    2006-10-15

    Diameter self-control was established in Bi{sub 4}Ge{sub 3}O{sub 12} fiber crystal growth by micro-pulling-down technique. In accordance with Bi{sub 2}O{sub 3}-GeO{sub 2} phase diagram, the diameter was controlled due to compensation of solidification with evaporation of volatile Bi{sub 2}O{sub 3} self-flux charged into the crucible with excess. The crucibles had capillary channels of 310 or 650 {mu}m in outer diameter. The crystals up to 400 mm long and 50-300 {mu}m in diameter were grown at pulling-down rates of 0.04-1.00 mm/min. The melt composition and the pulling rate were generally only two parameters determining solidification rate. As a result, crystals with uniform ({+-} 10%) diameter and aspect ratio up to 10{sup 4} were produced without automation of the process. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Experiments at the 12 GeV PS in 1986 - 1990

    International Nuclear Information System (INIS)

    Yoshimura, Y.

    1990-12-01

    This book has been edited mainly to introduce the various activities at the KEK 12 GeV PS. In the chapter 4, experiments which are currently in the stages of preparation, running and data analyzing are briefly described using information extracted from the 'KEK PS Proposal', 'KEK Annual Report 1986-1989' and various published papers listed in chapter 5. In the descriptions the author sometimes gives 'sensitive' information concerning the experimental groups very directly. Readers of this publication are therefore requested not to directly quote the descriptions given in chapter 4 (since that information was not provided by them). (author)

  4. Origin of structural analogies and differences between the atomic structures of GeSe4 and GeS4 glasses: A first principles study.

    Science.gov (United States)

    Bouzid, Assil; Le Roux, Sébastien; Ori, Guido; Boero, Mauro; Massobrio, Carlo

    2015-07-21

    First-principles molecular dynamics simulations based on density functional theory are employed for a comparative study of structural and bonding properties of two stoichiometrically identical chalcogenide glasses, GeSe4 and GeS4. Two periodic cells of 120 and 480 atoms are adopted. Both glasses feature a coexistence of Ge-centered tetrahedra and Se(S) homopolar connections. Results obtained for N = 480 indicate substantial differences at the level of the Se(S) environment, since Ge-Se-Se connections are more frequent than the corresponding Ge-S-S ones. The presence of a more prominent first sharp diffraction peak in the total neutron structure factor of glassy GeS4 is rationalized in terms of a higher number of large size rings, accounting for extended Ge-Se correlations. Both the electronic density of states and appropriate electronic localization tools provide evidence of a higher ionic character of Ge-S bonds when compared to Ge-Se bonds. An interesting byproduct of these investigations is the occurrence of discernible size effects that affect structural motifs involving next nearest neighbor distances, when 120 or 480 atoms are used.

  5. Radioactive Particle Tracking (RPT): The Powerful Industrial Radiotracer Techniques for Hydrodynamics and Flow Visualization Studies

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos

    2016-01-01

    Full text: Radioactive particle tracking (RPT) techniques have been widely applied in the field of chemical engineering, especially in hydrodynamics in multiphase reactors. This technique is widely used to monitor the motion of the flow inside a reactor by using a single radioactive particle tracer that is neutrally buoyant with respect to the phase is used as a tracker. The particle moves inside the volume of interest and its positions are determined by an array of scintillation detectors counting in coming photons. Particle position reconstruction algorithms have been traditionally used to map measured counts rate into the coordinates by solving a minimization problem between measured events and calibration data. RPT have been used to validate respective-scale CFD models to partial success. This presentation described an introduction to radioactive particle tracking and summarizing a history of such developments and the current state of this method in Malaysian Nuclear Agency, with a perspective towards the future and how these investigations may help scale-up developments. (author)

  6. Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6).

    Science.gov (United States)

    Li, Qian-Shu; Lü, Rui-Hua; Xie, Yaoming; Schaefer, Henry F

    2002-12-01

    The GeH(n) (n = 0-4) and Ge(2)H(n) (n = 0-6) systems have been studied systematically by five different density functional methods. The basis sets employed are of double-zeta plus polarization quality with additional s- and p-type diffuse functions, labeled DZP++. For each compound plausible energetically low-lying structures were optimized. The methods used have been calibrated against a comprehensive tabulation of experimental electron affinities (Chemical Reviews 102, 231, 2002). The geometries predicted in this work include yet unknown anionic species, such as Ge(2)H(-), Ge(2)H(2)(-), Ge(2)H(3)(-), Ge(2)H(4)(-), and Ge(2)H(5)(-). In general, the BHLYP method predicts the geometries closest to the few available experimental structures. A number of structures rather different from the analogous well-characterized hydrocarbon radicals and anions are predicted. For example, a vinylidene-like GeGeH(2) (-) structure is the global minimum of Ge(2)H(2) (-). For neutral Ge(2)H(4), a methylcarbene-like HGë-GeH(3) is neally degenerate with the trans-bent H(2)Ge=GeH(2) structure. For the Ge(2)H(4) (-) anion, the methylcarbene-like system is the global minimum. The three different neutral-anion energy differences reported in this research are: the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). For this family of molecules the B3LYP method appears to predict the most reliable electron affinities. The adiabatic electron affinities after the ZPVE correction are predicted to be 2.02 (Ge(2)), 2.05 (Ge(2)H), 1.25 (Ge(2)H(2)), 2.09 (Ge(2)H(3)), 1.71 (Ge(2)H(4)), 2.17 (Ge(2)H(5)), and -0.02 (Ge(2)H(6)) eV. We also reported the dissociation energies for the GeH(n) (n = 1-4) and Ge(2)H(n) (n = 1-6) systems, as well as those for their anionic counterparts. Our theoretical predictions provide strong motivation for the further experimental study of these important germanium hydrides. Copyright 2002 Wiley

  7. A search for parity violation in the inelastic scattering of polarized electrons from deuterium at 19.4 GeV

    International Nuclear Information System (INIS)

    Prescott, C.Y.; Atwood, W.B.; Cottrell, R.L.A.

    1977-01-01

    A search for parity violating effects in the inelastic scattering of polarized electrons off an unpolarized deuterium target at 19.4 GeV has recently been performed at SLAC. Using the 20-GeV/c and 8-GeV/c spectrometers, two kinematical points with Q 2 values of 1.2 GeV/c 2 and 4.2 GeV/c 2 , respectively, have been measured. Statistical accuracy of the measurements approaches the level of the weak interactions. Systematic errors are still being studied. Techniques to measure and control systematic errors and the present status of the data analysis are discussed

  8. The coarsening process of Ge precipitates in an Al-4 wt.% Ge alloy

    Energy Technology Data Exchange (ETDEWEB)

    Deaf, G.H

    2004-05-01

    In this paper the results of a quantitative transmission electron microscopy (TEM) investigation of the precipitation process of Ge in an Al-4 wt.% Ge alloy are described. Two crystallographic orientation relationships between the irregular germanium precipitate and aluminum matrix were found to be [1 0 0]{sub Ge} || [1 1 0]{sub Al} and [1 1 4]{sub Ge} || [1 0 0]{sub Al}. The irregular germanium precipitates formed on [0 0 1]{sub Al} habit planes. The origin of the irregular shape is due to the existence of a highly anisotropic interfacial energy as well as in an isotropic growth rate along <1 1 0>{sub A1} directions. Particles sizes were determined for variety of isothermal ageing times at 348, 423 and 523 K. The coarsening of the different morphologies of Ge precipitates was found to obey Ostwald ripening kinetics. The TEM results showed that the coarsening of irregular particles was due to the interfacial coalescence between these particles. Nine different morphologies have been distinguished in the form of (i) irregular particles, (ii) spheres, (iii) hexagonal plates, (iv) rods, (v) triangular plates, (vi) laths, (vii) small tetrahedra, (viii) rectangular plates, and (ix) Lamellae shape.

  9. Large-angle production of charged pions by 3 GeV/c - 12 GeV/c protons on carbon, copper and tin targets

    CERN Document Server

    Catanesi, M.G.; Ellis, Malcolm; Robbins, S.; Soler, F.J.P.; Gossling, C.; Bunyatov, S.; Krasnoperov, A.; Popov, B.; Serdiouk, V.; Tereschenko, V.; Di Capua, E.; Vidal-Sitjes, G.; Artamonov, A.; Arce, P.; Giani, S.; Gilardoni, S.; Gorbunov, P.; Grant, A.; Grossheim, A.; Gruber, P.; Ivanchenko, V.; Kayis-Topaksu, A.; Panman, J.; Papadopoulos, I.; Pasternak, J.; Tcherniaev, E.; Tsukerman, I.; Veenhof, R.; Wiebusch, C.; Zucchelli, P.; Blondel, A.; Borghi, S.; Campanelli, M.; Morone, M.C.; Prior, G.; Schroeter, R.; Engel, R.; Meurer, C.; Kato, I.; Gastaldi, U.; Mills, G.B.; Graulich, J.S.; Gregoire, G.; Bonesini, M.; Ferri, F.; Paganoni, M.; Paleari, F.; Kirsanov, M.; Bagulya, A.; Grichine, V.; Polukhina, M.; Palladino, V.; Coney, L.; Schmitz, D.; Barr, G.; De Santo, A.; Pattison, C.; Zuber, K.; Bobisut, F.; Gibin, D.; Guglielmi, A.; Mezzetto, M.; Dumarchez, J.; Vannucci, F.; Dore, U.; Orestano, D.; Pastore, F.; Tonazzo, A.; Tortora, L.; Booth, C.; Buttar, C.; Hodgson, P.; howlett, L.; Bogomilov, M.; Chizhov, M.; Kolev, D.; Tsenov, R.; Piperov, Stefan; Temnikov, P.; Apollonio, M.; Chimenti, P.; Giannini, G.; Santin, G.; Burguet-Castell, J.; Cervera-Villanueva, A.; Gomez-Cadenas, J.J.; Martin-Albo, J.; Novella, P.; Sorel, M.; Tornero, A.

    2008-01-01

    A measurement of the double-differential $\\pi^{\\pm}$ production cross-section in proton--carbon, proton--copper and proton--tin collisions in the range of pion momentum $100 \\MeVc \\leq p < 800 \\MeVc$ and angle $0.35 \\rad \\le \\theta <2.15 \\rad$ is presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was done using a small-radius cylindrical time projection chamber (TPC) placed in a solenoidal magnet. An elaborate system of detectors in the beam line ensured the identification of the incident particles. Results are shown for the double-differential cross-sections at four incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc and 12 \\GeVc).

  10. The LBL 1-2 GeV synchrotron radiation source

    International Nuclear Information System (INIS)

    Selph, F.B.

    1987-06-01

    The design of the 1 to 2 GeV Synchrotron Radiation Source to be built at the Lawrence Berkeley Laboratory is described. The goal of this facility is to provide very high brightness photon beams in the ultraviolet and soft x-ray regions. The photon energy range to be served is from 0.5 eV to 10 keV, with the brightest beams available in the 1 eV to 1 keV interval. For time-resolved experiments, beam pulses of a few tens of picoseconds will be available. Emphasis will be on the use of undulators and wigglers to produce high quality, intense beams. Initially, four of the former and one of the latter devices will be installed, with six long straight sections left open for future installations. In addition, provision is being made for 48 beamlines from bending magnets. The storage ring is optimized for operation at 1.5 GeV, with a maximum energy of 1.9 GeV. The injection system includes a 1.5 GeV booster synchrotron for full energy injection at the nominal operating energy of the storage ring. Filling time for the maximum storage ring intensity of 400 mA is about 2 minutes, and beam lifetime will be about 6 hours. Attention has been given to the extraordinary requirements for beam stability, and to the need to independently control photon beam alignment. Typical rms beam size in insertion regions is 201 μm horizontal, and 38 μm vertical. The manner in which this design achieves very high spectral brightness from undulators and wigglers, while maintaining a modest value for the beam current, will be described. Primarily, this requires that the design of the lattice, the arrangement of bending magnets, focusing quadrupoles and straight sections, be done with this in mind

  11. Measurement of charged pions in {sup 12}C+{sup 12}C collisions at 1A GeV and 2A GeV with HADES

    Energy Technology Data Exchange (ETDEWEB)

    Agakishiev, G.; Destefanis, M.; Gilardi, C.; Kirschner, D.; Kuehn, W.; Lange, J.S.; Metag, V.; Novotny, R.; Pechenov, V.; Pechenova, O.; Perez Cavalcanti, T.; Spataro, S.; Spruck, B. [Justus Liebig Universitaet Giessen, II. Physikalisches Institut, Giessen (Germany); Agodi, C.; Coniglione, R.; Finocchiaro, P.; Maiolino, C.; Piattelli, P.; Sapienza, P. [Laboratori Nazionali del Sud, Istituto Nazionale di Fisica Nucleare, Catania (Italy); Balanda, A.; Kozuch, A.; Przygoda, W. [Jagiellonian University of Cracow, Smoluchowski Institute of Physics, Krakow (Poland); Panstwowa Wyzsza Szkola Zawodowa, Nowy Sacz (Poland); Bellia, G. [Laboratori Nazionali del Sud, Istituto Nazionale di Fisica Nucleare, Catania (Italy); Universita di Catania, Dipartimento di Fisica e Astronomia, Catania (Italy); Belver, D.; Cabanelas, P.; Duran, I.; Garzon, J.A.; Lamas-Valverde, J.; Marin, J. [University of Santiago de Compostela, Departamento de Fisica de Particulas, Santiago de Compostela (Spain); Belyaev, A.; Chernenko, S.; Fateev, O.; Ierusalimov, A.; Zanevsky, Y. [Joint Institute of Nuclear Research, Dubna (Russian Federation); Bielcik, J.; Braun-Munzinger, P.; Galatyuk, T.; Gonzalez-Diaz, D.; Heinz, T.; Holzmann, R.; Koenig, I.; Koenig, W.; Kolb, B.W.; Lang, S.; Muench, M.; Palka, M.; Pietraszko, J.; Rustamov, A.; Schroeder, C.; Schwab, E.; Simon, R.S.; Traxler, M.; Yurevich, S.; Zumbruch, P. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Blanco, A.; Lopes, L.; Mangiarotti, A. [LIP-Laboratorio de Instrumentacao e Fisica Experimental de Particulas, Coimbra (Portugal); Bortolotti, A.; Michalska, B. [Sezione di Milano, Istituto Nazionale di Fisica Nucleare, Milano (Italy); Boyard, J.L.; Hennino, T.; Moriniere, E.; Ramstein, B.; Roy-Stephan, M.; Sudol, M. [CNRS/IN2P3 - Universite Paris Sud, Institut de Physique Nucleaire, Orsay Cedex (France); Christ, T.; Eberl, T.; Fabbietti, L.; Friese, J.; Gernhaeuser, R.; Jurkovic, M.; Kruecken, R. [and others

    2009-04-15

    We present the results of a study of charged-pion production in {sup 12}C+{sup 12}C collisions at incident beam energies of 1A GeV and 2A GeV using the HADES spectrometer at GSI. The main emphasis of the HADES program is on the dielectron signal from the early phase of the collision. Here, however, we discuss the data with respect to the emission of charged hadrons, specifically the production of {pi}{sup {+-}} mesons, which are related to neutral pions representing a dominant contribution to the dielectron yield. We have performed the first large-angular-range measurement of the distribution of {pi}{sup {+-}} mesons for the {sup 12}C+{sup 12}C collision system covering a fairly large rapidity interval. The pion yields, transverse-mass and angular distributions are compared with calculations done within a transport model, as well as with existing data from other experiments. The anisotropy of pion production is systematically analyzed. (orig.)

  12. GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

    Science.gov (United States)

    Aubin, J.; Hartmann, J. M.

    2018-01-01

    We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300-350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4-21 nm min-1 range). The evolution of the Sn content x with the F (SnCl4) 2 ·/F (Ge2H6) mass-flow ratio was fitted by x2/(1 - x) = n ·F (SnCl4) 2 ·/F (Ge2H6), with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300-350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min-1. The associated activation energy was low, i.e. Ea = 10 kcal mol-1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

  13. Transport properties of PrxOs4Sb12 single crystals with high Pr-site filling fraction grown under high pressure

    International Nuclear Information System (INIS)

    Tanaka, Kenya; Namiki, Takahiro; Saito, Takashi; Tatsuoka, Sho; Imamura, Atsushi; Kuwahara, Keitaro; Aoki, Yuji; Sato, Hideyuki

    2009-01-01

    We have succeeded in growing Pr x Os 4 Sb 12 single crystals under ∼4GPa with high Pr-site filling fraction x. The electrical resistance measurements clearly show that the superconducting (SC) transition is sharper and the onset temperatures is lower in the single crystal samples grown under high pressure compared to that of the sample grown under ambient pressure. These results suggest that the double SC transition ascribed to sample inhomogeneity is suppressed in the sample grown under high pressure. The change of 4f-electron crystalline electric field energy splitting between the Γ 1 ground state and the Γ 4 (2) first excited state in the sample made under high pressure is proposed as one of the possible origins of the suppression of the double SC transition.

  14. Common Data Acquisition Systems (DAS) Software Development for Rocket Propulsion Test (RPT) Test Facilities

    Science.gov (United States)

    Hebert, Phillip W., Sr.; Davis, Dawn M.; Turowski, Mark P.; Holladay, Wendy T.; Hughes, Mark S.

    2012-01-01

    The advent of the commercial space launch industry and NASA's more recent resumption of operation of Stennis Space Center's large test facilities after thirty years of contractor control resulted in a need for a non-proprietary data acquisition systems (DAS) software to support government and commercial testing. The software is designed for modularity and adaptability to minimize the software development effort for current and future data systems. An additional benefit of the software's architecture is its ability to easily migrate to other testing facilities thus providing future commonality across Stennis. Adapting the software to other Rocket Propulsion Test (RPT) Centers such as MSFC, White Sands, and Plumbrook Station would provide additional commonality and help reduce testing costs for NASA. Ultimately, the software provides the government with unlimited rights and guarantees privacy of data to commercial entities. The project engaged all RPT Centers and NASA's Independent Verification & Validation facility to enhance product quality. The design consists of a translation layer which provides the transparency of the software application layers to underlying hardware regardless of test facility location and a flexible and easily accessible database. This presentation addresses system technical design, issues encountered, and the status of Stennis development and deployment.

  15. Luminescence of one dimensional ZnO, GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanostructure through thermal evaporation of Zn and Ge powder mixture

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Vuong-Hung, E-mail: vuong.phamhung@hust.edu.vn; Kien, Vu Trung; Tam, Phuong Dinh; Huy, Pham Thanh

    2016-07-15

    Graphical abstract: - Highlights: • ZnO and GeO{sub 2}–ZnGeO{sub 4} nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture. • Morphology of specimens were observed to have a nanowire structure to rod-like morphology. • Strong NBE emission band with suppressed visible green emission band were observed on the dominant ZnO nanowires. • Strong emission of ∼530 nm were observed on the GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires. - Abstract: This paper reports the first attempt for fabrication of thermal evaporated Zn–Ge powder mixture to achieve near-band-edge (NBE) emission of ZnO and visible emission of GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires with controllable intensities. The nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture, particularly, by using different Zn:Ge ratio, temperature and evaporated times. The morphology of nanowires was depended on the Zn and Ge ratio that was observed to have a nanowire structure to rod-like morphology. The thermal evaporation of Zn:Ge powder mixture resulted in formation of dominant ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires as a function of evaporated parameters. These results suggest that the application of thermal evaporation of Zn and Ge mixture for potential application in synthesis of ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires for optoelectronic field.

  16. Gadolinium scandium germanide, Gd2Sc3Ge4

    Directory of Open Access Journals (Sweden)

    Sumohan Misra

    2009-04-01

    Full Text Available Gd2Sc3Ge4 adopts the orthorhombic Pu5Rh4-type structure. The crystal structure contains six sites in the asymmetric unit: two sites are statistically occupied by rare-earth atoms with Gd:Sc ratios of 0.967 (4:0.033 (4 and 0.031 (3:0.969 (3, one site (.m. symmetry is occupied by Sc atoms, and three distinct sites (two of which with .m. symmetry are occupied by Ge atoms. The rare-earth atoms form two-dimensional slabs with Ge atoms occupying the trigonal-prismatic voids.

  17. GeP and (Ge1−xSnx)(P1−yGey) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

    International Nuclear Information System (INIS)

    Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

    2015-01-01

    GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge 0.93(3) P 0.95(1) Sn 0.12(3) : a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder

  18. An insight into intrinsic interfacial properties between Li metals and Li10GeP2S12 solid electrolytes.

    Science.gov (United States)

    Chen, Bingbing; Ju, Jiangwei; Ma, Jun; Zhang, Jianjun; Xiao, Ruijuan; Cui, Guanglei; Chen, Liquan

    2017-11-29

    Density functional theory simulations and experimental studies were performed to investigate the interfacial properties, including lithium ion migration kinetics, between lithium metal anode and solid electrolyte Li 10 GeP 2 S 12 (LGPS). The LGPS[001] plane was chosen as the studied surface because the easiest Li + migration pathway is along this direction. The electronic structure of the surface states indicated that the electrochemical stability was reduced at both the PS 4 - and GeS 4 -teminated surfaces. For the interface cases, the equilibrium interfacial structures of lithium metal against the PS 4 -terminated LGPS[001] surface (Li/PS 4 -LGPS) and the GeS 4 -terminated LGPS[001] surface (Li/GeS 4 -LGPS) were revealed based on the structural relaxation and adhesion energy analysis. Solid electrolyte interphases were expected to be formed at both Li/PS 4 -LGPS and Li/GeS 4 -LGPS interfaces, resulting in an unstable state of interface and large interfacial resistance, which was verified by the EIS results of the Li/LGPS/Li cell. In addition, the simulations of the migration kinetics show that the energy barriers for Li + crossing the Li/GeS 4 -LGPS interface were relatively low compared with the Li/PS 4 -LGPS interface. This may contribute to the formation of Ge-rich phases at the Li/LGPS interface, which can tune the interfacial structures to improve the ionic conductivity for future all-solid-state batteries. This work will offer a thorough understanding of the Li/LGPS interface, including local structures, electronic states and Li + diffusion behaviors in all-solid-state batteries.

  19. Analysis of GEANT4 Physics List Properties in the 12 GeV MOLLER Simulation Framework

    Science.gov (United States)

    Haufe, Christopher; Moller Collaboration

    2013-10-01

    To determine the validity of new physics beyond the scope of the electroweak theory, nuclear physicists across the globe have been collaborating on future endeavors that will provide the precision needed to confirm these speculations. One of these is the MOLLER experiment - a low-energy particle experiment that will utilize the 12 GeV upgrade of Jefferson Lab's CEBAF accelerator. The motivation of this experiment is to measure the parity-violating asymmetry of scattered polarized electrons off unpolarized electrons in a liquid hydrogen target. This measurement would allow for a more precise determination of the electron's weak charge and weak mixing angle. While still in its planning stages, the MOLLER experiment requires a detailed simulation framework in order to determine how the project should be run in the future. The simulation framework for MOLLER, called ``remoll'', is written in GEANT4 code. As a result, the simulation can utilize a number of GEANT4 coded physics lists that provide the simulation with a number of particle interaction constraints based off of different particle physics models. By comparing these lists with one another using the data-analysis application ROOT, the most optimal physics list for the MOLLER simulation can be determined and implemented. This material is based upon work supported by the National Science Foundation under Grant No. 714001.

  20. A note on the Sumerian expression SI-ge4-de3/dam

    Directory of Open Access Journals (Sweden)

    Widell, Magnus

    2002-12-01

    Full Text Available The expression SI-ge4-dam/de3 appears in some of the loan documents of the Ur III period where it was used to establish the interest rate or the loan fee. In addition, it is sometimes preceded by ki-ba 'in its/this place/ground' or, in some cases, ma2 -a 'in the boat'. The regular verb SI.g was closely related, perhaps even synonymous with, the reduplication verb ḡar/ḡa2-ḡa2 'to put' or 'to place'. While it may be concluded that SI-ge4-dam/de3 had nothing to do with the verb si 'to fill' or gi4 'to return', the correct analysis of the expression remains somewhat uncertain. The article proposes that the SI should be read se and understood as a phonetic writing for the regular verb se3.g 'to put', 'to place'. The combination of the verb with the ki-ba may suggest that a more parochial form of keeping products existed side by side with the large centralized granaries and storehouses of the city.La expresión SI-ge4-dam/de3 aparece en algunos contratos de préstamo del período de Ur III, donde se empleaba para determinar el interés de dicho préstamo. Por otra parte, este término se hallaba a veces precedido de ki-ba 'en su/este lugar/suelo', y en algunos casos por ma2 -a 'en la barca'. El verbo regular SI.g está muy relacionado (quizás es incluso sinónimo con el verbo de la clase de la reduplicación ḡar/ḡa2-ḡa2 'poner' o 'colocar'. Mientras que puede concluirse que SI-ge4-dam/de3 no tiene nada que ver con el verbo si 'llenar', ni con gi4 'regresar, devolver', el análisis correcto de la expresión sigue siendo, de algún modo, incierto. En el artículo se propone que SI puede leerse como se , entendiéndolo como una escritura fonética del verbo regular se3.g 'poner', 'colocar'. La combinación del verbo con ki-ba podría indicar que, junto a los grandes graneros y almacenes centrales de la ciudad, había un modo distinto y más modesto de conservar los productos.

  1. REAuAl{sub 4}Ge{sub 2} and REAuAl{sub 4}(Au{sub x}Ge{sub 1-x}){sub 2} (RE=rare earth element): Quaternary intermetallics grown in liquid aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Xiuni, Wu [Department of Chemistry, Michigan State University, East Lansing, Michigan 48824 (United States); Kanatzidis, Mercouri G [Department of Chemistry, Michigan State University, East Lansing, Michigan 48824 (United States)

    2005-11-15

    The two families of intermetallic phases REAuAl{sub 4}Ge{sub 2} (1) (RE=Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Er, Tm and Yb) and REAuAl{sub 4}(Au{sub x}Ge{sub 1-x}){sub 2} (2) (x=0.4) (RE=Ce and Eu) were obtained by the reactive combination of RE, Au and Ge in liquid aluminum. The structure of (1) adopts the space group R-3m (CeAuAl{sub 4}Ge{sub 2}, a=4.2384(7)A, c=31.613(7)A; NdAuAl{sub 4}Ge{sub 2}, a=4.2258(4)A, c=31.359(5)A; GdAuAl{sub 4}Ge{sub 2}, a=4.2123(6)A, c=30.994(6)A; ErAuAl{sub 4}Ge{sub 2}, a=4.2074(4)A, c=30.717(5)A). The structure of (2) adopts the tetragonal space group P4/mmm with lattice parameters: a=4.3134(8)A, c=8.371(3)A for EuAuAl{sub 4}(Au{sub x}Ge{sub 1-x}){sub 2} (x=0.4). Both structure types present slabs of ''AuAl{sub 4}Ge{sub 2}'' or ''AuAl{sub 4}(Au{sub x}Ge{sub 1-x}){sub 2}'' stacking along the c-axis with layers of RE atoms in between. Magnetic susceptibility measurements indicate that the RE atoms (except for Ce and Eu) possess magnetic moments consistent with +3 species. The Ce atoms in CeAuAl{sub 4}Ge{sub 2} and CeAuAl{sub 4}(Au{sub x}Ge{sub 1-x}){sub 2} (x=0.4) appear to be in a mixed +3/+4 valence state; DyAuAl{sub 4}Ge{sub 2} undergoes an antiferromagnetic transition at 11K and below this temperature exhibits metamagnetic behavior. The Eu atoms in EuAuAl{sub 4}(Au{sub x}Ge{sub 1-x}){sub 2} (x=0.4) appear to be in a 2+ oxidation state.

  2. Framework 'interstitial' oxygen in La10(GeO4)5-(GeO5)O2 apatite electrolyte

    International Nuclear Information System (INIS)

    Pramana, S.S.; White, T.J.

    2007-01-01

    Oxygen conduction at low temperatures in apatites make these materials potentially useful as electrolytes in solid-oxide fuel cells, but our understanding of the defect structures enabling ion migration is incomplete. While conduction along [001] channels is dominant, considerable inter-tunnel mobility has been recognized. Using neutron powder diffraction of stoichiometric 'La 10 (GeO 4 ) 6 O 3 ', it has been shown that this compound is more correctly described as an La 10 (GeO 4 ) 5- (GeO 5 )O 2 apatite, in which high concentrations of interstitial oxygen reside within the channel walls. It is suggested that these framework interstitial O atoms provide a reservoir of ions that can migrate into the conducting channels of apatite, via a mechanism of inter-tunnel oxygen diffusion that transiently converts GeO 4 tetrahedra to GeO 5 distorted trigonal bipyramids. This structural modification is consistent with known crystal chemistry and may occur generally in oxide apatites. (orig.)

  3. Inclusive rho0 production in anti pp interactions at 22.4 GeV/c

    International Nuclear Information System (INIS)

    Ermilova, D.I.; Filippova, V.V.; Samojlov, V.V.

    1978-01-01

    Inclusive rho 0 production has been investigated in anti pp reactions at 22.4 GeV/c. The total cross section for rho 0 production is 8.1+-2.0 mb. The average number of rhosup(0') s per event is 0.17+-0.03. The average transverse momentum, as obtained by extrapolation of a simple exponential to the psub(T)sup(2) distribution, is 0.52+-0.12 GeV. The Feynman x and center of mass rapidity distributions show rho 0 to be ''centrally'' produced

  4. Coherent fragmentation of 12C nuclei of momentum 4.5 GeV/ c per nucleon through the 8Beg.s.+4He channel in a nuclear photoemulsion containing lead nuclei

    Science.gov (United States)

    Belaga, V. V.; Gerasimov, S. G.; Dronov, V. A.; Peresadko, N. G.; Pisetskaya, A. V.; Rusakova, V. V.; Fetisov, V. N.; Kharlamov, S. P.; Shesterkina, L. N.

    2017-07-01

    A two-particle channel in which an unbound nucleus of 8Be in the ground state (8Beg.s.) was one of the fragments was selected among events where 12C nuclei of momentum 4.5 GeV/c per nucleon undergo coherent dissociation into three alpha particles. The events in question were detected in a track nuclear photoemulsion containing lead nuclei, which was irradiated at the synchrophasotron of the Laboratory of High Energies at the Joint Institute for Nuclear Research (JINR, Dubna). The average transverse momentum of alpha particles produced upon the decay of 8Beg.s. nuclei was 87±6 MeV/ c, while that for "single" alpha (αs) particles was 123±15 MeV/ c. The average value of the transverse-momentum transfer in the reaction being considered, Pt(12C), was 223 ± 20 MeV/ c. The average value of the cross section for this channel involving Ag and Br target nuclei was 13 ± 4 mb, while the cross section for the reaction on the Pb nucleus was 40 ± 15 mb. The Coulomb dissociation contribution evaluated on the basis of the number of events where the momentum P t(12C) did not exceed 0.1 GeV/c saturated about 20%. In nine events, the measured total transverse energy of the fragments in the reference frame comoving with the decaying carbon nucleus did not exceed 0.45 MeV, which did not contradict the excitation of the participant 12C nucleus to the level at 7.65 MeV. The average value of the transverse momentum in those events was 234 ± 25 MeV/ c.

  5. 27 CFR 4.72 - Metric standards of fill.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Metric standards of fill. 4.72 Section 4.72 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS LABELING AND ADVERTISING OF WINE Standards of Fill for Wine § 4.72 Metric...

  6. Unstable behaviour of RPT when testing turbine characteristics in the laboratory

    Science.gov (United States)

    Nielsen, T. K.; Fjørtoft Svarstad, M.

    2014-03-01

    A reversible pump turbine is a machine that can operate in three modes of operation i.e. in pumping mode. in turbine mode and in phase compensating mode (idle speed). Reversible pump turbines have an increasing importance for regulation purposes for obtaining power balance in electric power systems. Especially in grids dominated by thermal energy. reversible pump turbines improve the overall power regulating ability. Increased use of renewables (wind-. wave- and tidal power plants) will utterly demand better regulation ability of the traditional water power systems. enhancing the use of reversible pump turbines. A reversible pump turbine is known for having incredible steep speed - flow characteristics. As the speed increases the flow decreases more than that of a Francis turbines with the same specific speed. The steep characteristics might cause severe stability problems in turbine mode of operation. Stability in idle speed is a necessity for phasing in the generator to the electric grid. In the design process of a power plant. system dynamic simulations must be performed in order to check the system stability. The turbine characteristics will have to be modelled with certain accuracy even before one knows the exact turbine design and have measured characteristics. A representation of the RPT characteristics for system dynamic simulation purposes is suggested and compared with measured characteristics. The model shows good agreement with RPT characteristics measured in The Waterpower Laboratory. Because of the S-shaped characteristics. there is a stability issue involved when measuring these characteristics. Without special measures. it is impossible to achieve stable conditions in certain operational points. The paper discusses the mechanism when using a throttle to achieve system stability. even if the turbine characteristics imply instability.

  7. Unstable behaviour of RPT when testing turbine characteristics in the laboratory

    International Nuclear Information System (INIS)

    Nielsen, T K; Svarstad, M Fjørtoft

    2014-01-01

    A reversible pump turbine is a machine that can operate in three modes of operation i.e. in pumping mode. in turbine mode and in phase compensating mode (idle speed). Reversible pump turbines have an increasing importance for regulation purposes for obtaining power balance in electric power systems. Especially in grids dominated by thermal energy. reversible pump turbines improve the overall power regulating ability. Increased use of renewables (wind-. wave- and tidal power plants) will utterly demand better regulation ability of the traditional water power systems. enhancing the use of reversible pump turbines. A reversible pump turbine is known for having incredible steep speed - flow characteristics. As the speed increases the flow decreases more than that of a Francis turbines with the same specific speed. The steep characteristics might cause severe stability problems in turbine mode of operation. Stability in idle speed is a necessity for phasing in the generator to the electric grid. In the design process of a power plant. system dynamic simulations must be performed in order to check the system stability. The turbine characteristics will have to be modelled with certain accuracy even before one knows the exact turbine design and have measured characteristics. A representation of the RPT characteristics for system dynamic simulation purposes is suggested and compared with measured characteristics. The model shows good agreement with RPT characteristics measured in The Waterpower Laboratory. Because of the S-shaped characteristics. there is a stability issue involved when measuring these characteristics. Without special measures. it is impossible to achieve stable conditions in certain operational points. The paper discusses the mechanism when using a throttle to achieve system stability. even if the turbine characteristics imply instability

  8. Generation of particles with large transverse momenta in π--p- and π-12C-interactions at 40 GeV/c

    International Nuclear Information System (INIS)

    Jordanova, Yu.; Lyubimov, V.; Mitova, S.; Penev, V.N.; Shklovskaya, A.

    1981-01-01

    The generation of a particle with transverse momenta Psub(transverse)>0.8 GeV/c in π - -p- and π - - 12 C-interactions with a π - -meson beam at a momentum Psub(π)=40 GeV/c in a two-meter propan chamber is investigated. Analyses of the secondary particle correlations produced in the interactions, in which the emitted hadron or group of hadrons have large transverse momenta, are carried out. In the investigated interactions the secondary particle momenta are measured with an accuracy not less than 30%. In the experimental data treatment of the π - - 12 C-collisions the interactions of π - -mesons with the quasifree nucleons of 12 C-nucleus are taken into account on the basis of the multiperipherical model. The experimental data analyses indicate that: 1) In the events with one or more secondary particles having large momenta Psub(transverse)>0.8 GeV/c the asymmetric correlations increase for both π - -p- and π - - 12 C-interactions; 2) Most correlated pairs of secondary particles having Psub(transverse)>0.8 GeV/c are produced with an almost equal rapidity and transverse momenta; 3) The presence of the secondary particles with large transverse momenta does not influence the resonance formation (in particular rho 0 -meson); 4) The effective mass distribution of the two secondary particles with Psub(transverse)>0.8 GeV/c has a broad peak at about 2 GeV/c

  9. New solar axion search in CAST with $^4$He filling

    CERN Document Server

    Arik, M; Barth, K; Belov, A; Brauninger, H; Bremer, J; Burwitz, V; Cantatore, G; Carmona, J M; Cetin, S A; Collar, J I; Da Riva, E; Dafni, T; Davenport, M; Dermenev, A; Eleftheriadis, C; Elias, N; Fanourakis, G; Ferrer-Ribas, E; Galan, J; Garcia, J A; Gardikiotis, A.; Garza, J G; Gazis, E N; Geralis, T; Georgiopoulou, E; Giomataris, I; Gninenko, S; Marzoa, M Gomez; Hasinoff, M D; Hoffmann, D H H; Iguaz, F J; Irastorza, I G; Jacoby, J; K.Jakovcic; Karuza, M; Kavuk, M; Krcmar, M; Kuster, M; Lakic, B; Laurent, J M; Liolios, A; Ljubicic, A; Luzon, G; Neff, S; Niinikoski, T; Nordt, A; Ortega, I; Papaevangelou, T; Pivovaroff, M .J; Raffelt, G; Rodriguez, A; Rosu, M; Ruz, J; Savvidis, I; Shilon, I; Solanki, S K; Stewart, L; Tomas, A; Vafeiadis, T; Villar, J; Vogel, J K; Yildiz, S C; Zioutas, K

    2015-01-01

    The CERN Axion Solar Telescope (CAST) searches for $a\\to\\gamma$ conversion in the 9 T magnetic field of a refurbished LHC test magnet that can be directed toward the Sun. Two parallel magnet bores can be filled with helium of adjustable pressure to match the X-ray refractive mass $m_\\gamma$ to the axion search mass $m_a$. After the vacuum phase (2003--2004), which is optimal for $m_a\\lesssim0.02$ eV, we used $^4$He in 2005--2007 to cover the mass range of 0.02--0.39 eV and $^3$He in 2009--2011 to scan from 0.39--1.17 eV. After improving the detectors and shielding, we returned to $^4$He in 2012 to investigate a narrow $m_a$ range around 0.2 eV ("candidate setting" of our earlier search) and 0.39--0.42 eV, the upper axion mass range reachable with $^4$He, to "cross the axion line" for the KSVZ model. We have improved the limit on the axion-photon coupling to $g_{a\\gamma}< 1.47\\times10^{-10} {\\rm GeV}^{-1}$ (95% C.L.), depending on the pressure settings. Since 2013, we have returned to vacuum and aim for a s...

  10. Experimental charge density determination in iso-structural Tellurides: Hf0.85GeTe4 and ZrGeTe4

    International Nuclear Information System (INIS)

    Israel, S.; Saravana Kumar, S.; Sheeba, R.A.J.R.; Saravanan, R.

    2012-01-01

    Hf 0.85 GeTe 4 is isostructural with stoichiometric ZrGeTe 4 and their crystal structure adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensional chains of face sharing Hf/Zr-centered bicapped trigonal prisms and corner sharing Ge- centered tetrahedra. These layers stack on top of each other to complete the three-dimensional structure with undulating van der Waals gaps. Single crystal XRD is used for the refinement of the structural parameters. The space group Cmc2 1 was considered and the structure was the refined using the harmonic model by the software called JANA2006. The refined structure factors were then subsequently used in MEM (Maximum Entropy Method) technique for the construction of the charge density in the unit cell using software called PRIMA and then visualized with the help of visualization software called VESTA

  11. The ferromagnetic Kondo-lattice compound SmFe sub 4 P sub 1 sub 2

    CERN Document Server

    Takeda, N

    2003-01-01

    We report on the magnetic properties of a filled skutterudite compound, SmFe sub 4 P sub 1 sub 2. Magnetic susceptibility and specific heat measurements revealed a ferromagnetic transition at 1.6 K. The temperature dependence of the electrical resistivity exhibits a Kondo-lattice behaviour and the electronic specific heat coefficient attains values as large as 370 mJ mol sup - sup 1 K sup - sup 2. This compound is thereby the first Sm-based heavy-fermion system found with a ferromagnetic ground state. The Kondo temperature is estimated to be about 30 K. (letter to the editor)

  12. Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

    International Nuclear Information System (INIS)

    Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

    2013-01-01

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

  13. A new 1-2 GeV/c separated beam for BNL

    Energy Technology Data Exchange (ETDEWEB)

    Pile, P.H.; Beavis, D.; Brown, R.L.; Chrien, R.; Danby, G.; Jackson, J.; Lazarus, D.M.; Leonhardt, W.; Pearson, C.; Pendzick, A.; Montemurro, P.; Russo, T.; Sandberg, J.; Sawafta, R.; Spataro, C.; Walker, J. (Brookhaven National Lab. Associated Universities, Inc., Upton, NY (United States)); Enge, H.A. (Massachusetts Inst. of Tech., Cambridge, MA (United States))

    1992-09-15

    A 1-2 GeV/c beam line has been constructed at the Brookhaven National Laboratory alternating gradient synchrotron (BNL AGS). The beam line is optimized to deliver an intense clean beam of 1.8 GeV/c negative kaons for an H particle search experiment and incorporates two stages of velocity selection with the magnetic optics corrected to third order. Details of the beam line design as well as results of the commissioning will be discussed. (orig.).

  14. Local distortions about Nd in NdO{sub s4}Sb{sub 12}

    Energy Technology Data Exchange (ETDEWEB)

    Keiber, T.; Bridges, F. [Department of Physics, University of California, Santa Cruz, California 95064 (United States); Baumbach, R.E. [Los Alamos National Laboratory, New Mexico (United States); Maple, M.B. [Physics Department, University of California, San Diego, California (United States)

    2013-02-15

    We present an extended X-ray absorption fine structure (EXAFS) study of the NdOs{sub 4}Sb{sub 12} system at the Nd and Os L{sub III} edges. Nd is expected to be a ''rattler'' atom in this skutterudite crystal and we obtain a low Einstein temperature (61 K) as expected. However, although ultrasonic measurements have suggested a large off-center displacement of Nd, the EXAFS data are inconsistent with such a model. An analysis of the first two Os-Sb peaks in the Os L{sub III} data also shows no evidence for unusual disorder. In contrast the Nd-Os peak in the Nd L{sub III} data and the Os-Os peak in the Os L{sub III} data both show significant disorder at 4 K, with the largest disorder found for the Nd-Os pair. This suggests that a distortion of the structure that involves mainly the Os atoms is present; it is likely that this distortion - which may also be dynamic - also causes the anomalies in the ultrasonic data (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Contact interaction of the Bi12GeO20, Bi12SiO20, and Bi4Ge3O12 melts with noble metals

    Science.gov (United States)

    Denisov, V. M.; Podkopaev, O. I.; Denisova, L. T.; Kuchumova, O. V.; Istomin, S. A.; Pastukhov, E. A.

    2014-02-01

    The sessile drop method is used to study the contact interaction of Ag, Au, Pd, Pt, and Ir with the Bi2O3-GeO2 and Bi2O3-SiO2 melts. These melts spread over Ag and Pd and, in some cases, over Au and Pt at a rather high speed and form equilibrium contact angles on Ir.

  16. Structural, Electronic, and Thermodynamic Properties of Tetragonal t-SixGe3−xN4

    Directory of Open Access Journals (Sweden)

    Chenxi Han

    2018-03-01

    Full Text Available The structural, mechanical, anisotropic, electronic, and thermal properties of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 in the tetragonal phase are systematically investigated in the present work. The mechanical stability is proved by the elastic constants of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4. Moreover, they all demonstrate brittleness, because B/G < 1.75, and v < 0.26. The elastic anisotropy of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 is characterized by Poisson’s ratio, Young’s modulus, the percentage of elastic anisotropy for bulk modulus AB, the percentage of elastic anisotropy for shear modulus AG, and the universal anisotropic index AU. The electronic structures of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 are all wide band gap semiconductor materials, with band gaps of 4.26 eV, 3.94 eV, 3.83 eV, and 3.25 eV, respectively, when using the Heyd-Scuseria-Ernzerhof (HSE06 hybrid functional. Moreover, t-Ge3N4 is a quasi-direct gap semiconductor material. The thermodynamic properties of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 are investigated utilizing the quasi-harmonic Debye model. The effects of temperature and pressure on the thermal expansion coefficient, heat capacity, Debye temperature, and Grüneisen parameters are discussed in detail.

  17. Structural and electronic properties of Pt induced nanowires on Ge(110)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.; Bampoulis, P.; Safaei, A.; Zandvliet, H.J.W.; Houselt, A. van, E-mail: A.vanHouselt@utwente.nl

    2016-11-30

    Highlights: • Deposition of Pt induces regularly spaced (1.13 nm, 1.97 nm and 3.38 nm) nanowires on Ge(110). • In the troughs between the wires spaced 6× the Ge lattice consant pentagons are observed. • Spatially resolved STS reveals a filled electronic state at −0.35 eV. • This state has its highest intensity above the pentagons. • For 2 ML Pt, nanowires coexist with PtGe clusters, which become liquid like above 1040 K. - Abstract: The structural and electronic properties of Pt induced nanowires on Ge(110) surfaces have been studied by scanning tunneling microscopy and low energy electron microscopy. The deposition of a sub-monolayer amount of Pt and subsequent annealing at 1100 (±30) K results into nanowires which are aligned along the densely packed [1–10] direction of the Ge(110) surface. With increasing Pt coverage the nanowires form densely packed arrays with separations of 1.1 ± 0.1 nm, 2.0 ± 0.1 nm and 3.4 ± 0.1 nm. Ge pentagons reside in the troughs for nanowire separations of 3.4 nm, however for smaller nanowire separations no pentagons are found. Spatially resolved scanning tunneling spectroscopy measurements reveal a filled electronic state at −0.35 eV. This electronic state is present in the troughs as well as on the nanowires. The −0.35 eV state has the strongest intensity on the pentagons. For Pt depositions exceeding two monolayers, pentagon free nanowire patches are found, that coexist with Pt/Ge clusters. Upon annealing at 1040 K these Pt/Ge clusters become liquid-like, indicating that we are dealing with eutectic Pt{sub 0.22}Ge{sub 0.78} clusters. Low energy electron microscopy videos reveal the formation and spinodal decomposition of these eutectic Pt/Ge clusters.

  18. Fragmentation of 12C nuclei in emulsion at 50 GeV/c

    International Nuclear Information System (INIS)

    El-Naghy, A.

    1981-01-01

    A total of 852 12 C-emulsion interactions at 4.2 GeV/nucleon was investigated. In 86% of these events, at least one projectile fragment was oberserved in each. The angular distributions of Z = 1,2, and >= 3 projectile fragments are narrow, and the dispersion of the distribution decreases with the increasing of Z. The production cross section of the reaction 12 C + Em → Li (from the projectile) + anything is about 6 x 10 -3 sigmasub(in). Only the projectile-fragmentation events, nsub(h) = O, were studied in detail; the percentage of these events is 10% of the total inelastic events. The events with the maximum probability are those in which α-fragment is the maximum-charged projectile fragment emitted. This indicates that the projectile nuclear structure plays an important role in the fragmentation process. In 1.2% of the total events, 12 C has been dissociated into 3 α-particles. (orig.)

  19. Injection error monitor for KEK 12 GeV PS

    International Nuclear Information System (INIS)

    Shirakata, Masashi; Sato, Hikaru; Toyama, Takeshi; Marutsuka, Katsumi.

    1994-01-01

    The injection error monitor is now developing for an easy tuning of the main ring beam injection at the KEK 12 GeV proton synchrotron. The beam trajectory on the horizontal phase space plane is obtained by a test bench system. The injection error monitor proved to be available for the beam injection tuning. (author)

  20. In vitro characterization of gE negative bovine herpesvirus types 1.1 (BHV-1.1 and 1.2a (BHV-1.2a Caracterização in vitro de herpes vírus bovino tipos 1.1 (BHV-1.1 e 1.2a (BHV-1.2a gE negativos

    Directory of Open Access Journals (Sweden)

    Fernando R. Spilki

    2004-09-01

    Full Text Available This study aimed the in vitro growth characterization of a previously constructed Brazilian bovine herpesvirus 1.2a with a deletion in the glycoprotein E gene (BHV-1.2a gE-. The plaque sizes, penetration and growth kinetics of the Brazilian BHV-1.2a gE- were studied and compared with the parental virus, as well as with a BHV-1.1 gE- recombinant derived from an European BHV-1.1 strain. No statistical differences were observed between the gE- recombinants and the respective parental viruses penetration assays were performed. When single step growth curves were studied, no statistical differences were observed between gE- and parental viruses. However, it was observed that both gE- viruses were excreted from cells in significantly higher titres at 11 hours post infection in comparison with parental viruses. No statistical differences were observed when plaque sizes of parental viruses or gE- viruses we analyzed separately in each cell type. However, both gE- recombinants displayed a significantly reduced plaque areas on three different cell cultures, in comparison with parental viruses, indicating that the lack of gE had the same effect on both BHV-1 subtypes, manifested by a restricted cell-to-cell spread in infected cells.O presente estudo teve como objetivo a caracterização das propriedades de crescimento in vitro de uma amostra brasileira de herpesvírus bovino tipo 1.2a que apresenta uma deleção no gene que codifica a glicoproteína E (BHV-1.2a gE-. Os tamanhos de placa, cinética de penetração e cinética de multiplicação do vírus BHV-1.2a gE- foram estudados e comparados com o vírus parental, bem como com um vírus BHV-1.1 gE- recombinante, o qual é derivado de uma amostra européia de BHV-1.1. Em termos de cinética de penetração, não foram observadas diferenças significativas quando comparados os vírus gE- com os parentais. A determinação da cinética de multiplicação não demonstrou diferenças significativas entre os

  1. Microstructure and microwave dielectric properties of Na1/2Sm1/2TiO3 filled PTFE, an environmental friendly composites

    Science.gov (United States)

    Luo, Fuchuan; Tang, Bin; Yuan, Ying; Fang, Zixuan; Zhang, Shuren

    2018-04-01

    A study on Na1/2Sm1/2TiO3 filled and glassfiber reinforced polytetrafluoroethylene (PTFE) composites was described. The GF content was a fixed value of 4 wt%, and the NST content in the composite matrix changed from 26 to 66 wt%. The paper consisted of the manufactural process of the composite and the effects of filler content on the properties of the substrate, such as morphology, moisture absorption, density, dielectric properties and temperature coefficient of dielectric constant. As NST filler loading increased from 26 to 66 wt%, the dielectric constant and loss tangent experienced a continuously increase while the development in τε was opposite. X-Ray Diffraction, FTIR and XPS were used to analyze the microstructure of modified ceramic powder. It was proved that the silane coupling agent has been grafted on the NST surface successfully. At last, the NST/GF filled PTFE composites exhibited good dielectric constant (εr = 4.95), low dielectric loss (tan δ = 0.00147), acceptable water absorption (0.036) and temperature coefficient of dielectric constant (τε = -164) at filler loading of 4 wt% GF and 46 wt% NST.

  2. Site preference of metal atoms in Gd_5_-_xM_xTt_4 (M = Zr, Hf; Tt = Si, Ge)

    International Nuclear Information System (INIS)

    Yao, Jinlei; Mozharivskyj, Yurij

    2011-01-01

    Zirconium and hafnium were incorporated into the Gd_5Ge_4 and Gd_5Si_4 parent compounds in order to study the metal-site occupation in the M_5X_4 magnetocaloric phases (M = metals; X = p elements) family. The Gd_5_-_xZr_xGe_4 phases adopt the orthorhombic Sm_5Ge_4-type (space group Pnma) structure for x ≤ 1.49 and the tetragonal Zr_5Si_4-type (P4_12_12) structure for x ≥ 1.77. The Gd_5_-_xHf_xSi_4 compounds crystallize in the orthorhombic Gd_5Si_4-type (Pnma) structure for x ≤ 0.41 and the Zr_5Si_4-type structure for x ≥ 0.7. In both systems, single-crystal X-ray diffraction reveals that the Zr/Hf atoms preferentially occupy the slab-surface M2 and slab-center M3 sites, both of which have a significantly larger Zr/Hf population than the slab-surface M1 site. The metal-site preference, i.e. the coloring problem on the three metal sites, is discussed considering geometric and electronic effects of the local coordination environments. The analysis of the metal-site occupation in Gd_5_-_xZr_xGe_4 and Gd_5_-_xHf_xSi_4 as well as other metal-substituted M_5X_4 systems suggests that both geometric and electronic effects can be used to explain the metal-site occupation. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Fragment production in 12-GeV proton-induced reactions

    International Nuclear Information System (INIS)

    Hirata, Yuichi; Ohnishi, Akira; Ohtsuka, Naohiko; Nara, Yasushi; Niida, Koji; Chiba, Satoshi; Takada, Hiroshi

    2000-01-01

    We study mass and angular distribution of Intermediate Mass Fragment (IMF) produced from p(12 GeV)+ 197 Au reaction by using JAM cascade model combined with percolation model. Although the mass distribution of IMF is well reproduced, the experimentally observed sideward peak of IMF angular distribution is not explained within present JAM + percolation model. (author)

  4. XAFS study of GeO sub 2 glass under pressure

    CERN Document Server

    Ohtaka, O; Fukui, H; Murai, K; Okube, M; Takebe, H; Katayama, Y; Utsumi, W

    2002-01-01

    Using a large-volume high-pressure apparatus, Li sub 2 O-4GeO sub 2 glass and pure GeO sub 2 gel have been compressed to 14 GPa at room temperature and their local structural changes have been investigated by an in situ XAFS (x-ray absorption fine-structure) method. On compression of Li sub 2 O-4GeO sub 2 glass, the Ge-O distance gradually becomes short below 7 GPa, showing the conventional compression of the GeO sub 4 tetrahedron. Abrupt increase in the Ge-O distance occurs between 8 and 10 GPa, which corresponds to the coordination number (CN) changing from 4 to 6. The CN change is completed at 10 GPa. On decompression, the reverse transition occurs gradually below 10 GPa. In contrast to the case for Li sub 2 O-4GeO sub 2 glass, the Ge-O distance in GeO sub 2 gel gradually increases over a pressure range from 2 to 12 GPa, indicating that continuous change in CN occurs. The Ge-O distance at 12 GPa is shorter than that of Li-4GeO sub 2 indicating that the change in CN is not completed even at this pressure. O...

  5. Polarisation parameter measurement in the proton-proton elastic scattering from 0.5 to 1.2 GeV

    International Nuclear Information System (INIS)

    Ducros, Yves

    1970-01-01

    The angular distribution of the polarisation parameter was measured in the proton-proton elastic - scattering at seven energies between 0.5 and 1.2 GeV. A polarized proton target was used. The results show a maximum of the polarisation parameter of 0.6, at 0.73 GeV. This maximum is due to the important increase of the total cross section between 0.6 and 0.73 GeV. At 1.2 GeV the angular distribution of the polarisation shows a minimum for a momentum transfer value of -1 (GeV/c) 2 . A phase shift analysis was done at 0.66 GeV, using all available experimental data at this energy. There is no evidence of a di-baryonic resonance in the 1 D 2 phase. (author) [fr

  6. Experimental and theoretical investigations for site preference and anisotropic size change of RE{sub 11}Ge{sub 4}In{sub 6−x}M{sub x} (RE = La, Ce; M = Li, Ge; x = 1, 1.96)

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Beom-Yong; Jeon, Jieun [Department of Chemistry, Chungbuk National University, Cheongju, Chungbuk 361-763 (Korea, Republic of); Lee, Junseong [Department of Chemistry, Chonnam National University, Gwangju, Chonnam 500-757 (Korea, Republic of); Kim, Jongsik [Department of Chemistry, Dong-A University, Pusan 604-714 (Korea, Republic of); You, Tae-Soo [Department of Chemistry, Chungbuk National University, Cheongju, Chungbuk 361-763 (Korea, Republic of)

    2015-01-25

    Graphical abstract: Reported is experimental and theoretical studies to understand the site-preference between anionic elements and the anisotropic size-change of the 3-D anionic frameworks of two polar intermetallic compounds in the RE{sub 11}Ge{sub 4}In{sub 6−x}M{sub x} (RE = La, Ce; M = Li, Ge; x = 1, 1.96) phase. Indium atoms with a smaller electronegativity prefer to occupy the “dumbbell-site” having the smaller QVAL value, and the anisotropic size-change of the anionic framework in La{sub 11}Ge{sub 4}In{sub 5.00(1)}Li{sub 1.00} is rationalized by using various COHP curves analyses. - Highlights: • Site-preference between anions was elucidated by the QVAL value of each site. • Ten models with different atomic orderings were examined by coloring problems. • COHP curves explained the anisotropic size-change of La{sub 11}Ge{sub 4}In{sub 5.00(1)}Li{sub 1.00}. - Abstract: Two polar intermetallic compounds in the RE{sub 11}Ge{sub 4}In{sub 6−x}M{sub x} (RE = La, Ce; M = Li, Ge; x = 1, 1.96) series have been synthesized by conventional high-temperature reactions and characterized by both single-crystal and powder X-ray diffractions. Both compounds crystallized in the tetragonal crystal system (space group I4/mmm, Z = 4, Pearson symbol tI84) with nine crystallographically independent atomic positions in the asymmetric unit and adopted the Sm{sub 11}Ge{sub 4}In{sub 6}-type structure, which can be considered as an ordered version of the Ho{sub 11}Ge{sub 10}-type. The lattice parameters are a = 11.8370(4) Å and c = 17.2308(7) Å for La{sub 11}Ge{sub 4}In{sub 5.00(1)}Li{sub 1.00}; a = 11.8892(4) Å, c = 16.5736(7) Å for Ce{sub 11}Ge{sub 5.96(3)}In{sub 4.04}. The overall crystal structures of two isotypic compounds can be described as a combination of the cage-shaped 3-dimensional (3-D) anionic framework and three different types of cationic polyhedra filling the inside of the 3-D frameworks. Anionic elements consisting of the frameworks indicate the

  7. Tests results of skutterudite based thermoelectric unicouples

    International Nuclear Information System (INIS)

    Saber, Hamed H.; El-Genk, Mohamed S.; Caillat, Thierry

    2007-01-01

    Tests were performed of skutterudite based unicouples with (MAY-04) and without (MAR-03) metallic coating on the legs near the hot junction to quantify the effect on reducing performance degradation with operation time. The p-legs in the unicouples were made of CeFe 3.5 Co 0.5 Sb 12 and the n-legs of CoSb 3 . The MAY-04 test was performed in vacuum (∼9 x 10 -7 torr) for ∼2000 h at hot and cold junction temperatures of 892.1 ± 11.9 K and 316.1 ± 5.5 K, respectively, while the MAR-03 test was performed in argon cover gas (0.051-0.068 MPa) at 972.61 ± 10.0 K and 301.1 ± 5.1 K, respectively. The argon cover gas decreased antimony loss from the legs in the MAR-03 test, but marked degradation in performance occurred over time. Conversely, the metallic coating in the MAY-04 test was very effective in reducing performance degradation of the unicouple. Because the cross sectional areas of the legs in MAY-04 were larger than those in MAR-03, the measured electrical power of the former is much higher than that of the latter, but the Beginning of Test (BOT) open circuit voltages, V oc (204.2 mV) for both unicouples were almost the same. The peak electrical power of the MAY-04 unicouple decreased 12.35% from 1.62W e at BOT to 1.42W e after ∼2000 h of testing, while that of the MAR-03 unicouple decreased 25.37% from 0.67 to 0.5W e after 261 h of testing at the above temperatures. The estimated peak efficiency of the MAY-04 unicouple, shortly after BOT (10.65%), was only ∼0.37% points lower than the theoretical value, calculated assuming zero side heat losses and zero contact resistance per leg

  8. Experiments at the KEK 12-GeV PS in 1991-1995

    International Nuclear Information System (INIS)

    Yoshimura, Y.

    1994-06-01

    This report has been edited mainly to introduce the various activities at the KEK 12-GeV PS. Chapter 1 is a list of experiments which have been approved by the PS-PAC since May 2, 1975. The machine time executed from FY 1990 to Fy 1993 is shown in chapter 2. In chapter 4, experiments which are currently in various stages of preparation, running and data analyzing are briefly described. The information was extracted from the 'KEK-PS Proposal', 'KEK Annual Report 1990-1993' and various published papers listed in chapter 5. In the descriptions the author sometimes might give 'sensitive' information concerning the experimental groups very directly. Readers of this publication are therefore requested not to directly quote the descriptions given in chapter 4. (J.P.N.)

  9. Unexpected Ge-Ge contacts in the two-dimensional Ge{sub 4}Se{sub 3}Te phase and analysis of their chemical cause with the density of energy (DOE) function

    Energy Technology Data Exchange (ETDEWEB)

    Kuepers, Michael; Konze, Philipp M.; Maintz, Stefan; Steinberg, Simon [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Mio, Antonio M.; Cojocaru-Miredin, Oana; Zhu, Min; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Mueller, Merlin; Mayer, Joachim [Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen University (Germany); Luysberg, Martina [Ernst-Ruska-Center, Forschungszentrum Juelich GmbH (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH Aachen University (Germany)

    2017-08-14

    A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe{sub 0.75}Te{sub 0.25} has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge{sub 4}Se{sub 3}Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge{sub 4}Se{sub 3}Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Common Data Acquisition Systems (DAS) Software Development for Rocket Propulsion Test (RPT) Test Facilities - A General Overview

    Science.gov (United States)

    Hebert, Phillip W., Sr.; Hughes, Mark S.; Davis, Dawn M.; Turowski, Mark P.; Holladay, Wendy T.; Marshall, PeggL.; Duncan, Michael E.; Morris, Jon A.; Franzl, Richard W.

    2012-01-01

    The advent of the commercial space launch industry and NASA's more recent resumption of operation of Stennis Space Center's large test facilities after thirty years of contractor control resulted in a need for a non-proprietary data acquisition system (DAS) software to support government and commercial testing. The software is designed for modularity and adaptability to minimize the software development effort for current and future data systems. An additional benefit of the software's architecture is its ability to easily migrate to other testing facilities thus providing future commonality across Stennis. Adapting the software to other Rocket Propulsion Test (RPT) Centers such as MSFC, White Sands, and Plumbrook Station would provide additional commonality and help reduce testing costs for NASA. Ultimately, the software provides the government with unlimited rights and guarantees privacy of data to commercial entities. The project engaged all RPT Centers and NASA's Independent Verification & Validation facility to enhance product quality. The design consists of a translation layer which provides the transparency of the software application layers to underlying hardware regardless of test facility location and a flexible and easily accessible database. This presentation addresses system technical design, issues encountered, and the status of Stennis' development and deployment.

  11. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

    OpenAIRE

    Alassaad, Kassem; Soulière, Véronique; Cauwet, François; Peyre, Hervé; Carole, Davy; Kwasnicki, Pawel; Juillaguet, Sandrine; Kups, Thomas; Pezoldt, Jörg; Ferro, Gabriel

    2014-01-01

    8 pages; International audience; In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the growth temperature and GeH4 flux. Other growth par...

  12. Asymmetry measurements in p--p scattering with polarized beams and targets up to 12 GeV/c

    International Nuclear Information System (INIS)

    Auer, I.P.; Colton, E.; Halpern, H.; Hill, D.; Spinka, H.; Tamura, N.; Theodosiou, G.; Underwood, D.; Wanger, R.; Watanabe, Y.; Yokosawa, A.

    1978-01-01

    The processes of proton--proton scattering for various spin directions was investigated in the beam momentum range of 1 to 12 GeV/c. A striking energy dependence was observed at p/sub lab/ = 1 to 4 GeV/c, especially in Δ sigma/sub L/, the total cross section difference in the longitudinal spin states. The rapid energy dependence has been interpreted as evidence for the formation of diproton resonances. Various pp scattering parameters were measured at 6 GeV/c, including 3-spin parameters, which are sufficient to determine pp elastic scattering amplitudes in a model independent way at 0.2 2 . Measurements of spin--spin correlation parameters were extended to higher t and higher energies, revealing the importance of the spin dependent interaction. These measurements may shed light on the nature of the constituents and their interactions. 24 references

  13. Increasing Polymer Solar Cell Fill Factor by Trap-Filling with F4-TCNQ at Parts Per Thousand Concentration.

    Science.gov (United States)

    Yan, Han; Manion, Joseph G; Yuan, Mingjian; García de Arquer, F Pelayo; McKeown, George R; Beaupré, Serge; Leclerc, Mario; Sargent, Edward H; Seferos, Dwight S

    2016-08-01

    Intrinsic traps in organic semiconductors can be eliminated by trap-filling with F4-TCNQ. Photovoltaic tests show that devices with F4-TCNQ at parts per thousand concentration outperform control devices due to an improved fill factor. Further studies confirm the trap-filling pathway and demonstrate the general nature of this finding. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. RF System Modelling for the JLab 12 GeV Upgrade and RIA

    International Nuclear Information System (INIS)

    Alicia Hofler; Jean Delayen; Hovater, J.; Stefan Simrock

    2003-01-01

    Jefferson Lab is using the MATLAB/Simulink library for RF systems developed for TTF as a tool to develop a model of its 12 GeV upgrade and the Rare Isotope Accelerator (RIA) to study the behavior and performance of the RF control system. The library includes elements describing a superconducting cavity with mechanical modes excited by Lorentz Force effects and a klystron including saturation characteristics. It can be applied to gradient and phase or in-phase and quadrature control for cavities operating in either a self-excited loop or generator driven mode. We will provide an overview of the theory behind the library components and present initial modeling results for Jefferson Lab's 12 GeV Upgrade and the RIA systems

  15. Energy dependence of pi, p and pbar transverse momentum spectra for Au+Au collisions at sqrt sNN = 62.4 and 200 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Ritter, H

    2007-03-26

    We study the energy dependence of the transverse momentum (pT) spectra for charged pions, protons and anti-protons for Au+Au collisions at sqrt sNN = 62.4 and 200 GeV. Data are presented at mid-rapidity (lbar y rbar< 0.5) for 0.2< pT< 12 GeV/c. In the intermediate pT region (2< pT< 6 GeV/c), the nuclear modification factor is higher at 62.4 GeV than at 200 GeV, while at higher pT (pT> 7 GeV/c) the modification is similar for both energies. The p/pi+ and pbar/pi- ratios for central collisions at sqrt sNN = 62.4 GeV peak at pT _~;; 2 GeV/c. In the pT range where recombination is expected to dominate, the p/pi+ ratios at 62.4 GeV are larger than at 200 GeV, while the pbar/pi- ratios are smaller. For pT> 2 GeV/c, the pbar/pi- ratios at the two beam energies are independent of pT and centrality indicating that the dependence of the pbar/pi- ratio on pT does not change between 62.4 and 200 GeV. These findings challenge various models incorporating jet quenching and/or constituent quark coalescence.

  16. Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

    International Nuclear Information System (INIS)

    Oda, Katsuya; Okumura, Tadashi; Tani, Kazuki; Saito, Shin-ichi; Ido, Tatemi

    2014-01-01

    Lattice strain applied by patterned Si 3 N 4 stressors in order to improve the optical properties of Ge layers directly grown on a Si substrate was investigated. Patterned Si 3 N 4 stressors were fabricated by various methods and their effects on the strain and photoluminescence were studied. Although we found that when the stressor was fabricated by thermal chemical vapor deposition (CVD), the Ge waveguide was tensilely and compressively strained in the edge and center positions, respectively, and photoluminescence (PL) could be improved by decreasing the width of the waveguide, the crystallinity of the Ge waveguide was degraded by the thermal impact of the deposition process. Low-temperature methods were therefore used to make the patterned stressors. The tensile strain of the Ge layer increased from 0.14% to 0.2% when the stressor was grown by plasma enhanced CVD at 350 °C, but the effects of the increased tensile strain could not be confirmed because the Si 3 N 4 layer was unstable when irradiated with the excitation light used in photoluminescence measurements. Si 3 N 4 stressors grown by inductively coupled plasma CVD at room temperature increased the tensile strain of the Ge layer up to 0.4%, thus red-shifting the PL peak and obviously increasing the PL intensity. These results indicate that the Si 3 N 4 stressors fabricated by the room-temperature process efficiently improve the performance of Ge light-emitting devices. - Highlights: • Ge layers were directly grown on a Si substrate by low-temperature epitaxial growth. • Si 3 N 4 stressors were fabricated on the Ge layers by various methods. • Tensile strain of the Ge layers was improved by the Si 3 N 4 stressors. • Photoluminescence (PL) intensity was increased with the Si 3 N 4 stressors. • Red-shift of the PL spectra was observed from the tensile strained Ge layers

  17. Finite-size calculations of FQHE states at filling ν = 1/2

    International Nuclear Information System (INIS)

    Fano, G.

    1987-01-01

    The results of numerical calculations, performed in the spherical geometry, of FQHE states of N ≤ 12 electrons on the lowest Landau level at filling ν = 1/2, are presented. The extrapolated value for the energy per particle is -0.469±0.005, in the usual units e 2 /a 0 . Densities and pair correlation functions of the ground states are computed. The pair correlation are 'Wigner-crystal-like', with maxima corresponding to regular polyhedra. For N=4, 8 and 10 it is found that the system presents a broken rotational invariance which generalizes the broken particle-hole symmetry already known in different gauges. Quasi-particles, quasi-holes and the 'exciton' spectrum are computed, and some microscopic wave functions are examined. The quasi-particles and the quasi-holes are not localized; this suggests a possible 'deformability' of the system

  18. Magnetoelastic behaviour of Gd sub 5 Ge sub 4

    CERN Document Server

    Magen, C; Algarabel, P A; Marquina, C; Ibarra, M R

    2003-01-01

    A complete investigation of the complex magnetic behaviour of Gd sub 5 Ge sub 4 by means of linear thermal expansion and magnetostriction measurements (5-300 K, 0-120 kOe) has been carried out. Our results support the suggested existence in this system of a coupled crystallographic-magnetic transition from a Gd sub 5 Ge sub 4 -type Pnma (antiferromagnetic) to a Gd sub 5 Si sub 4 -type Pnma (ferromagnetic) state. Strong magnetoelastic effects are observed at the field-induced first-order magnetic-martensitic transformation. A revised magnetic and crystallographic H- T phase diagram is proposed.

  19. Vacancy-ordering effects in AlB2-type ErGe2 - x(0.4 < x < or = 0.5).

    Science.gov (United States)

    Christensen, Jeppe; Lidin, Sven; Malaman, Bernard; Venturini, Gerard

    2008-06-01

    In the Er-Ge system, the compostion range ErGe(2) to Er(2)Ge(3) has been investigated. Eight samples were produced by arc melting of the elements, and analyzed using X-ray powder diffraction. Nine crystal structures were found to be present in the samples. The structures are described as a homologous series and presented within the superspace formalism using the superspace group X2/m(alpha0gamma)0s, X representing the centring vector ((1/2), (1/2), 0, (1/2)). In this description the modulation vector q = (alphaa* + gammac*) is shown to be a direct measure of the Ge content as ErGe(2 - alpha) (alpha falls in the range 1\\over 3 to (1/2)). The large composition range is achieved by extended vacancy ordering in the planar 6(3) net of Ge with subsequent relaxation.

  20. Studies of bulk materials for thermoelectric cooling

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, J W; Nolas, G S; Volckmann, E H

    1997-07-01

    The authors discuss ongoing work in three areas of thermoelectric materials research: (1) broad band semiconductors featuring anion networks, (2) filled skutterudites, and (3) polycrystalline Bi-Sb alloys. Key results include: a preliminary evaluation of a previously untested ternary semiconductor, KSnSb; the first reported data in which Sn is used as a charge compensator in filled antimonide skutterudites; the finding that Sn doping does not effect polycrystalline Bi{sub 1{minus}x}Sb{sub x} as it does single crystal samples.

  1. (Zn, Mg)2GeO4:Mn2+ submicrorods as promising green phosphors for field emission displays: hydrothermal synthesis and luminescence properties.

    Science.gov (United States)

    Shang, Mengmeng; Li, Guogang; Yang, Dongmei; Kang, Xiaojiao; Peng, Chong; Cheng, Ziyong; Lin, Jun

    2011-10-07

    (Zn(1-x-y)Mg(y))(2)GeO(4): xMn(2+) (y = 0-0.30; x = 0-0.035) phosphors with uniform submicrorod morphology were synthesized through a facile hydrothermal process. X-Ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence (PL), and cathodoluminescence (CL) spectroscopy were utilized to characterize the samples. SEM and TEM images indicate that Zn(2)GeO(4):Mn(2+) samples consist of submicrorods with lengths around 1-2 μm and diameters around 200-250 nm, respectively. The possible formation mechanism for Zn(2)GeO(4) submicrorods has been presented. PL and CL spectroscopic characterizations show that pure Zn(2)GeO(4) sample shows a blue emission due to defects, while Zn(2)GeO(4):Mn(2+) phosphors exhibit a green emission corresponding to the characteristic transition of Mn(2+) ((4)T(1)→(6)A(1)) under the excitation of UV and low-voltage electron beam. Compared with Zn(2)GeO(4):Mn(2+) sample prepared by solid-state reaction, Zn(2)GeO(4):Mn(2+) phosphors obtained by hydrothermal process followed by high temperature annealing show better luminescence properties. In addition, codoping Mg(2+) ions into the lattice to substitute for Zn(2+) ions can enhance both the PL and CL intensity of Zn(2)GeO(4):Mn(2+) phosphors. Furthermore, Zn(2)GeO(4):Mn(2+) phosphors exhibit more saturated green emission than the commercial FEDs phosphor ZnO:Zn, and it is expected that these phosphors are promising for application in field-emission displays.

  2. Inclusive D meson production with the Mark II detector at SPEAR. [3. 9 to 7. 4 GeV (c. m. )

    Energy Technology Data Exchange (ETDEWEB)

    Coles, M.W.

    1980-09-01

    Neutral and charged D meson production cross sections were measured at center-of-mass energies between 3.9 GeV and 7.4 GeV. The quantity R/sub D/(=(sigma/sub D/sup +/+D/sup -// + sigma/sub D/sup 0/+ anti D/sup 0//)/2 sigma/sub ..mu../sup +/..mu../sup -//) is equal to 2 at 4 GeV and 4.4 GeV and about equal to 1 elsewhere. R/sub D/ + 2.5 approximately equals R (sigma/sub hadrons//sigma/sub ..mu../sup +/..mu../sup -//) at all energies. The exclusive cross sections for e/sup +/e/sup -/ annihilation into D anti D, D* anti D, and D* anti D* were measured at center-of-mass energies between 3.9 GeV and 4.3 GeV. sigma/sub D* anti D*/ decreases with increasing center-of-mass energy from 6.6 +- 1.3 nb near 4 GeV to 3.6 +- .9 nb near 4.3 GeV. sigma/sub D* anti D/ also decreases from 4.2 +- .9 nb to 1.8 +- .6 nb over the same energy region. sigma/sub D anti D/ is less than 0.5 +- .3 nb at all energies. The branching fractions for D*/sup +/ and D* decay were measured. B/sub D*/sup 0/..-->..D/sup 0/..pi../sup 0// = 0.5 +- .09, B/sub D*/sup +/..-->..D/sup 0/..pi../sup +// = 0.44 +- .10, and B/sub D*/sup +/..-->..D/sup +/..pi../sup 0// = 0.31 +- .07. At 5.2 GeV, the D meson differential cross section is well described by phase space for e/sup +/e/sup -/ ..-->.. D anti D..pi pi.. or D* anti D*..pi pi... Sd sigma/dz was parameterized as A(1-z)/sup n/ with n = 0.9 +- .4. Quasi-two-body production accounts for less than 20% of the total D cross section. No evidence was found for associated charmed baryon-D meson production. An upper limit of 0.4 nb (90% confidence level) was determined for associated production. 41 figures, 12 tables.

  3. Nanoscale thermoelectric materials

    International Nuclear Information System (INIS)

    Failamani, F.

    2015-01-01

    Thermoelectric (TE) materials directly convert thermal energy to electrical energy when subjected to a temperature gradient, whereas if electricity is applied to thermoelectric materials, a temperature gradient is formed. The performance of thermoelectric materials is characterized by a dimensionless figure of merit (ZT = S2T/ρλ), which consists of three parameters, Seebeck coefficient (S), electrical resistivity (ρ) and thermal conductivity (λ). To achieve good performance of thermoelectric power generation and cooling, ZT's of thermoelectric materials must be as high as possible, preferably above unity. This thesis comprises three main parts, which are distributed into six chapters: (i) nanostructuring to improve TE performance of trivalent rare earth-filled skutterudites (chapter 1 and 2), (ii) interactions of skutterudite thermolectrics with group V metals as potential electrode or diffusion barrier for TE devices (chapter 3 and 4), and (iii) search for new materials for TE application (chapter 5 and 6). Addition of secondary phases, especially nano sized phases can cause additional reduction of the thermal conductivity of a filled skutterudite which improves the figure of merit (ZT) of thermoelectric materials. In chapter 1 we investigated the effect of various types of secondary phases (silicides, borides, etc.) on the TE properties of trivalent rare earth filled Sb-based skutterudites as commercially potential TE materials. In this context the possibilty to introduce borides as nano-particles (via ball-milling in terms of a skutterudite/boride composite) is also elucidated in chapter 2. As a preliminary study, crystal structure of novel high temperature FeB-type phases found in the ternary Ta-{Ti,Zr,Hf,}-B systems were investigated. In case of Ti and Hf this phase is the high temperature stabilization of binary group IV metal monoborides, whereas single crystal study of (Ta,Zr)B proves that it is a true ternary phase as no stable monoboride exist in the

  4. Energy distributions study of spallation neutrons produced at 0 deg. by proton beams (0.8 GeV and 1.6 GeV) and deuteron beams (1.2 and 1.6 GeV)

    International Nuclear Information System (INIS)

    Martinez, Eugenie

    1997-01-01

    We are studying the energy distributions of spallation neutrons produced at 0 deg. by protons of 0.8 GeV up to 1.6 GeV and deuterons of 1.2 and 1.6 GeV with two complementary experimental techniques: the time of flight measurement with tagged incident protons for low energy neutrons (3-400 MeV) and the use of a magnetic spectrometer at high energy (E ≥ 200 MeV). These measurements enable us to measure for the first time the neutron spectra for incident energies higher than 800 MeV. We have compared the double differential cross sections produced with 1.2 GeV protons on several thin targets (Al, Fe, Zr, W, Pb and Th). The neutron production obtained for a lead target is also studied for various energies (0.8 up to 1.6 GeV) and incident particles (p, d). Data are compared with theoretical simulations carried out using the TIERCE system and the intranuclear cascade model of J. Cugnon associated to the decay code of D. Durand. The neutron spectra calculated by using the HETC and MCNP codes, included in TIERCE, are significantly higher than the measured distributions. A better agreement is observed with the results of the Cugnon's cascade model. (author) [fr

  5. Electroexcitation of the Roper resonance for 1.7 < Q**2 < 4.5 -GeV2 in vec-ep ---> en pi+

    Energy Technology Data Exchange (ETDEWEB)

    Aznauryan, Inna; Burkert, Volker; Kim, Wooyoung; Park, Kil; Adams, Gary; Amaryan, Moscov; Amaryan, Moskov; Ambrozewicz, Pawel; Anghinolfi, Marco; Asryan, Gegham; Avagyan, Harutyun; Bagdasaryan, H.; Baillie, Nathan; Ball, J.P.; Ball, Jacques; Baltzell, Nathan; Barrow, Steve; Batourine, V.; Battaglieri, Marco; Bedlinskiy, Ivan; Bektasoglu, Mehmet; Bellis, Matthew; Benmouna, Nawal; Berman, Barry; Biselli, Angela; Blaszczyk, Lukasz; Bonner, Billy; Bookwalter, Craig; Bouchigny, Sylvain; Boyarinov, Sergey; Bradford, Robert; Branford, Derek; Briscoe, Wilbert; Brooks, William; Bultmann, S.; Bueltmann, Stephen; Butuceanu, Cornel; Calarco, John; Careccia, Sharon; Carman, Daniel; Casey, Liam; Cazes, Antoine; Chen, Shifeng; Cheng, Lu; Cole, Philip; Collins, Patrick; Coltharp, Philip; Cords, Dieter; Corvisiero, Pietro; Crabb, Donald; Crede, Volker; Cummings, John; Dale, Daniel; Dashyan, Natalya; De Masi, Rita; De Vita, Raffaella; De Sanctis, Enzo; Degtiarenko, Pavel; Denizli, Haluk; Dennis, Lawrence; Deur, Alexandre; Dhamija, Seema; Dharmawardane, Kahanawita; Dhuga, Kalvir; Dickson, Richard; Djalali, Chaden; Dodge, Gail; Donnelly, J.; Doughty, David; Dugger, Michael; Dytman, Steven; Dzyubak, Oleksandr; Egiyan, Hovanes; Egiyan, Kim; Elfassi, Lamiaa; Elouadrhiri, Latifa; Eugenio, Paul; Fatemi, Renee; Fedotov, Gleb; Feldman, Gerald; Feuerbach, Robert; Forest, Tony; Fradi, Ahmed; Funsten, Herbert; Gabrielyan, Marianna; Garcon, Michel; Gavalian, Gagik; Gevorgyan, Nerses; Gilfoyle, Gerard; Giovanetti, Kevin; Girod, Francois-Xavier; Goetz, John; Gohn, Wesley; Golovach, Evgeny; Gonenc, Atilla; Gordon, Christopher; Gothe, Ralf; Graham, L.; Griffioen, Keith; Guidal, Michel; Guillo, Matthieu; Guler, Nevzat; Guo, Lei; Gyurjyan, Vardan; Hadjidakis, Cynthia; Hafidi, Kawtar; Hafnaoui, Khadija; Hakobyan, Hayk; Hakobyan, Rafael; Hanretty, Charles; Hardie, John; Hassall, Neil; Heddle, David; Hersman, F.; Hicks, Kenneth; Hleiqawi, Ishaq; Holtrop, Maurik; Hyde, Charles; Ilieva, Yordanka; Ireland, David; Ishkhanov, Boris; Isupov, Evgeny; Ito, Mark; Jenkins, David; Jo, Hyon-Suk; Johnstone, John; Joo, Kyungseon; Juengst, Henry; Kalantarians, Narbe; Keller, Dustin; Kellie, James; Khandaker, Mahbubul; Kim, Kui; Klein, Andreas; Klein, Andreas; Klimenko, Alexei; Kossov, Mikhail; Krahn, Zebulun; Kramer, Laird; Kubarovsky, Valery; Kuhn, Joachim; Kuhn, Sebastian; Kuleshov, Sergey; Kuznetsov, Viacheslav; Lachniet, Jeff; Laget, Jean; Langheinrich, Jorn; Lawrence, Dave; Lee, T.; Lima, Ana; Livingston, Kenneth; Lu, Haiyun; Lukashin, Konstantin; MacCormick, Marion; Markov, Nikolai; Mattione, Paul; McAleer, Simeon; McKinnon, Bryan; McNabb, John; Mecking, Bernhard; Mehrabyan, Surik; Melone, Joseph; Mestayer, Mac; Meyer, Curtis; Mibe, Tsutomu; Mikhaylov, Konstantin; Minehart, Ralph; Mirazita, Marco; Miskimen, Rory; Mokeev, Viktor; Morand, Ludyvine; Moreno, Brahim; Moriya, Kei; Morrow, Steven; Moteabbed, Maryam; Mueller, James; Munevar Espitia, Edwin; Mutchler, Gordon; Nadel-Turonski, Pawel; Nasseripour, Rakhsha; Niccolai, Silvia; Niculescu, Gabriel; Niculescu, Maria-Ioana; Niczyporuk, Bogdan; Niroula, Megh; Niyazov, Rustam; Nozar, Mina; O' Rielly, Grant; Osipenko, Mikhail; Ostrovidov, Alexander; Park, S.; Pasyuk, Evgueni; Paterson, Craig; Anefalos Pereira, S.; Philips, Sasha; Pierce, Jerome; Pivnyuk, Nikolay; Pocanic, Dinko; Pogorelko, Oleg; Polli, Ermanno; Popa, Iulian; Pozdnyakov, Sergey; Preedom, Barry; Price, John; Prok, Yelena; Protopopescu, Dan; Qin, Liming; Raue, Brian; Riccardi, Gregory; Ricco, Giovanni; Ripani, Marco; Ritchie, Barry; Rosner, Guenther; Rossi, Patrizia; Rowntree, David; Rubin, Philip; Sabatie, Franck; Saini, Mukesh; Salamanca, Julian; Salgado, Carlos; Santoro, Joseph; Sapunenko, Vladimir; Schott, Diane; Schumacher, Reinhard; Serov, Vladimir; Sharabian, Youri; Sharov, Dmitri; Shaw, J.; Shvedunov, Nikolay; Skabelin, Alexander; Smith, Elton; Smith, Lee; Sober, Daniel; Sokhan, Daria; Stavinskiy, Aleksey; Stepanyan, Samuel; Stepanyan, Stepan; Stokes, Burnham

    2008-10-01

    DOI: http://dx.doi.org/10.1103/PhysRevC.78.045209
    The helicity amplitudes of the electroexcitation of the Roper resonance are extracted for 1.7 < Q2 < 4.5 GeV2 from recent high precision JLab-CLAS cross section and longitudinally polarized beam asymmetry data for pi+ electroproduction on protons at W=1.15-1.69 GeV. The analysis is made using two approaches, dispersion relations and a unitary isobar model, which give consistent results. It is found that the transverse helicity amplitude A_{1/2} for the gamma* p -> N(1440)P11 transition, which is large and negative at Q2=0, becomes large and positive at Q2 ~ 2 GeV2, and then drops slowly with Q2. The longitudinal helicity amplitude S_{1/2}, which was previously found from CLAS ep -> eppi0,enpi+ data to be large and positive at Q2=0.4,0.65 GeV2, drops with Q2. Available model predictions for gamma* p -> N(1440)P11 allow us to conclude that these results provide strong evidence in favor of N(1440)P11 as a first radial excitation of

  6. Peripheral pn production and decay angular distributions in the reaction pi /sup -/p to (pn)p at 12 GeV/c incident momentum

    CERN Document Server

    Ghidini, B; Cantore, A; Di Corato, M; Donald, R A; Eades, John; Edwards, D N; Edwards, M E; French, Bernard R; Fry, J R; Houlden, M A; Mandelli, L; Moebes, J P; Müller, K; Navach, F; Palano, A; Palazzi-Cerrina, C; Paul, E; Picciarelli, V; Renneberg, W; Rühmer, W; Smith, I; Zito, G

    1978-01-01

    The reaction pi /sup -/p to (pn)p/sub s/, where p/sub s/ is a slow proton, was measured at 12 GeV/c incident momentum with the CERN-OMEGA spectrometer. Both antiproton and proton were identified uniquely by electronics information. 1844 events with four-momentum transfer squared in the range 0.13GeV/sup 2/ and with invariant masses M(pn) up to 2.5 GeV were obtained. The corresponding cross section in this t range is determined to be sigma =4+or-0.4 mu b. Extrapolating the differential cross section over the whole t range assuming d sigma /dt approximately exp(5.3 t) a cross section of sigma =9.3+or-2.0 mu b is estimated. Comparison is made with data on pi /sup -/p to (pp)n/sub s/ (where n/sub s/ is a slow neutron) in the same t range. (12 refs).

  7. Multiplicity distributions of projectile fragments in interactions of nuclei with emulsion at 4.1-4.5 A GeV/c

    International Nuclear Information System (INIS)

    Fakhraddin, S; Rahim, Magda A

    2008-01-01

    The results of our systematic studies of projectile fragments (PFs) multiplicity distributions in interactions of 4 He, 12 C, 16 O, 22 Ne and 28 Si with emulsion at 4.1-4.5 A GeV/c are presented in this paper. The mean values for the three different multiplicities of PFs at nearly the same energy are given. The dependence of these mean values on the projectile mass number A p , as well as the dependence of the PFs on target groups (H, CNO and AgBr), has been investigated

  8. Long afterglow properties of Eu2+/Mn2+ doped Zn2GeO4

    International Nuclear Information System (INIS)

    Wan, Minhua; Wang, Yinhai; Wang, Xiansheng; Zhao, Hui; Li, Hailing; Wang, Cheng

    2014-01-01

    Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized via a high temperature solid state reaction. X-ray diffraction (XRD), afterglow spectra, decay curves and thermoluminescence curves were utilized to characterize the samples. The X-ray diffraction phases indicate that the doping of small amount of transition metal ions or rare earth ions has no significant influence on the crystal structure of Zn 2 GeO 4 . According to the afterglow spectra, we found that the Zn 2 GeO 4 :Eu 2+ 0.01 exhibits a broad band emission with a peak at 474 nm, which could be ascribed to Eu 2+ transition between 4f 6 5d 1 and 4f 7 electron configurations. The Zn 2 GeO 4 :Mn 2+ 0.01 shows a narrow band emission peaking at 532 nm corresponding to the characteristic transition of Mn 2+ ( 4 T 1 → 6 A 1 ). The thermoluminescence (TL) curves above room temperature are employed for the discussion of the origin of the traps and the mechanism of the persistent luminescence. The results indicate that Zn 2 GeO 4 may be an excellent host material for the rare earth ions or transition metal ions long afterglows. -- Highlights: • Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized. • Found that these phosphors possess a persistent luminescence property. • The long afterglow spectra were measured. • Found that these phosphors possess a trap level by thermoluminescence

  9. Origin of structural analogies and differences between the atomic structures of GeSe{sub 4} and GeS{sub 4} glasses: A first principles study

    Energy Technology Data Exchange (ETDEWEB)

    Bouzid, Assil; Le Roux, Sébastien; Ori, Guido; Boero, Mauro; Massobrio, Carlo [Institut de Physique et de Chimie des Matériaux de Strasbourg, Université de Strasbourg and CNRS UMR 7504, 23 rue du Loess, BP43, F-67034 Strasbourg Cedex 2 (France)

    2015-07-21

    First-principles molecular dynamics simulations based on density functional theory are employed for a comparative study of structural and bonding properties of two stoichiometrically identical chalcogenide glasses, GeSe{sub 4} and GeS{sub 4}. Two periodic cells of 120 and 480 atoms are adopted. Both glasses feature a coexistence of Ge-centered tetrahedra and Se(S) homopolar connections. Results obtained for N = 480 indicate substantial differences at the level of the Se(S) environment, since Ge–Se–Se connections are more frequent than the corresponding Ge–S–S ones. The presence of a more prominent first sharp diffraction peak in the total neutron structure factor of glassy GeS{sub 4} is rationalized in terms of a higher number of large size rings, accounting for extended Ge–Se correlations. Both the electronic density of states and appropriate electronic localization tools provide evidence of a higher ionic character of Ge–S bonds when compared to Ge–Se bonds. An interesting byproduct of these investigations is the occurrence of discernible size effects that affect structural motifs involving next nearest neighbor distances, when 120 or 480 atoms are used.

  10. MAu2GeS4-Chalcogel (M = Co, Ni): Heterogeneous Intra- and Intermolecular Hydroamination Catalysts

    KAUST Repository

    Davaasuren, Bambar

    2017-08-08

    High surface area macroporous chalcogenide aerogels (chalcogels) MAu2GeS4 (M = Co, Ni) were prepared from K2Au2GeS4 precursor and Co(OAc)2 or NiCl2 by one-pot sol-gel metathesis reactions in aqueous media. The MAu2GeS4-chalcogels were screened for catalytic intramolecular hydroamination of 4-pentyn-1-amine substrate at different temperatures. 87% and 58% conversion was achieved at 100 °C, using CoAu2GeS4- and NiAu2GeS4-chalcogels respectively, and the reaction kinetics follows the first order. It was established that the catalytic performance of the aerogels is associated with the M(2+) centers present in the structure. Intermolecular hydroamination of aniline with 1-R-4-ethynylbenzene (R = -H, -OCH3, -Br, -F) was carried out at 100 °C using CoAu2GeS4-chalcogel catalyst, due to its promising catalytic performance. The CoAu2GeS4-chalcogel regioselectively converted the pair of substrates to respective Markovnikov products, (E)-1-(4-R-phenyl)-N-phenylethan-1-imine, with 38% to 60% conversion.

  11. MAu2GeS4-Chalcogel (M = Co, Ni): Heterogeneous Intra- and Intermolecular Hydroamination Catalysts

    KAUST Repository

    Davaasuren, Bambar; Emwas, Abdul-Hamid M.; Rothenberger, Alexander

    2017-01-01

    High surface area macroporous chalcogenide aerogels (chalcogels) MAu2GeS4 (M = Co, Ni) were prepared from K2Au2GeS4 precursor and Co(OAc)2 or NiCl2 by one-pot sol-gel metathesis reactions in aqueous media. The MAu2GeS4-chalcogels were screened for catalytic intramolecular hydroamination of 4-pentyn-1-amine substrate at different temperatures. 87% and 58% conversion was achieved at 100 °C, using CoAu2GeS4- and NiAu2GeS4-chalcogels respectively, and the reaction kinetics follows the first order. It was established that the catalytic performance of the aerogels is associated with the M(2+) centers present in the structure. Intermolecular hydroamination of aniline with 1-R-4-ethynylbenzene (R = -H, -OCH3, -Br, -F) was carried out at 100 °C using CoAu2GeS4-chalcogel catalyst, due to its promising catalytic performance. The CoAu2GeS4-chalcogel regioselectively converted the pair of substrates to respective Markovnikov products, (E)-1-(4-R-phenyl)-N-phenylethan-1-imine, with 38% to 60% conversion.

  12. Effect of Si/Ge ratio on resistivity and thermopower in Gd{sub 5}Si{sub x}Ge{sub 4-x} magnetocaloric compounds

    Energy Technology Data Exchange (ETDEWEB)

    Raj Kumar, D.M. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.i [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Prabahar, K.; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Poddar, Asok; Ranganathan, R. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Suresh, K.G. [Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2011-07-15

    The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd{sub 5}(Si,Ge){sub 4}-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of -8 {mu}V/K was obtained at the magneto-structural transition for the x=2 compound. - Research highlights: Effect of Si/Ge ratio on microstructure, magneto-structural transitions, resistivity ({rho}) and thermopower S(T) behaviour has been investigated in Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7, 2.0, 2.2 and 2.3. Microstructural studies reveal the presence of a Gd{sub 5}(Si,Ge){sub 4} -matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The resistivity behaviour has shown good correlation with the microstructural studies. A large change in thermopower of -8{mu}V/K was obtained at the magneto-structural transition for the x=2 compound. The resistivity and change in thermopower values were high for the alloys with Si/Ge ratio {<=}1 compared to that of the alloys with Si/Ge ratio >1.

  13. Baryon exchange in 12 GeV/c. pi. /sup -/p interactions. [Differential cross sections

    Energy Technology Data Exchange (ETDEWEB)

    Arenton, M W; Bacino, W J; Hauptman, J M; Rudnick, F D; Shepard, P F; Slater, W E; Stork, D H; Ticho, H K [California Univ., Los Angeles (USA)

    1978-08-14

    Final states produced by charged baryon exchange in ..pi../sup -/p interactions at 12 GeV/c laboratory momentum have been studied. Forward neutrons with momenta determined by a calorimeter to be greater than 8.5 +- 1.4 GeV/c triggered the SLAC 40-inch hydrogen bubble chamber which operated at a 10 Hz expansion rate. Data on the reactions ..pi../sup -/p..-->..n..pi../sup -/..pi../sup +/, ..pi../sup -/p..-->..n..pi../sup -/..pi../sup +/..pi../sup 0/, and ..pi../sup -/p..-->..n..pi../sup -/..pi../sup -/..pi../sup +/..pi../sup +/are reported. In ..pi../sup -/p..-->..n..pi../sup -/..pi../sup +/ production of rho and f mesons is observed. Differential cross sections are derived and compared with data at lower incident momentum and with theoretical models. In ..pi../sup -/p..-->..n..pi../sup -/..pi../sup +/..pi../sup 0/, ..omega.. production is observed with a differential cross section having a deep dip near u' = 0.2 (GeV/c)/sup 2/. In ..pi../sup -/p..-->..n..pi../sup -/..pi../sup -/..pi../sup +/..pi../sup +/, ..delta../sup -/, rho and f production is observed. The observed mass distributions appear to indicate the production of wide resonances decaying into rho..pi pi... Some evidence for rho-..omega.. interference is also observed.

  14. Several new phases in RE-Mg-Ge systems (RE = rare earth metal) - syntheses, structures, and chemical bonding

    International Nuclear Information System (INIS)

    Suen, Nian-Tzu; Bobev, Svilen

    2012-01-01

    Reported are the synthesis and structural characterization of Ce_5Mg_8Ge_8 (its own structure type), CeMg_2_-_xGe_2_+_x (BaAl_4-type structure), RE_4Mg_7Ge_6 (RE = Ce-Nd, Sm; La_4Mg_7Ge_6-type structure), and RE_4Mg_5Ge_6 (RE = Ce, Pr; Tm_4Zn_5Ge_6-type structure). The structures of these compounds have been established by single-crystal and powder X-ray diffraction. These compounds are closely related to each other not only in their chemical compositions but also in their structures. A common structural feature of all are MgGe_4 tetrahedra, which are connected by corner- and/or edge-sharing into complex polyanionic frameworks with the rare-earth metal atoms filling the ''empty'' space. The structures are compared to known types of structures, and we have investigated the chemical bonding in Ce_5Mg_8Ge_8 with electronic structure calculations, which were carried out by the tight-bonding linear muffin-tin orbital (TB-LMTO) method. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Comparison on the production of radionuclides in 1.4 GeV proton irradiated LBE targets of different thickness

    CERN Document Server

    Maiti, Moumita; Mendonça, Tania M; Stora, Thierry; Lahiri, Susanta

    2014-01-01

    This is the first report on the inventory of radionuclides produced in 1.4 GeV proton induced reaction on Lead-Bismuth Eutectic (LBE) targets. LBE targets of 6 mm diameter and 1 to 8 mm lengths were irradiated with 1.4 GeV protons. The radionuclides ranging from Be-7 (53.12 days) to Po-207 (5.8 h) were identified in the samples with the help of time resolved gamma-ray spectroscopy. However, there is no signature of formation of At radioisotopes, which can be produced by the interaction of secondary particles, typical for thick targets.

  16. Design and testing of the measuring equipment for the detection of 71Ge and 69Ge within the gallium-solar-neutrino experiment

    International Nuclear Information System (INIS)

    Huebner, M.

    1980-01-01

    A low level measuring system has been developed for the Ga-solar-neutrino experiment, to detect the reaction 71 Ga (νsub(e),e - ) 71 Ge by the decay 71 Ge (Tsub(1/2) = 11. 4 d, 100% electron capture). An estimate based on the solar standard model gives 15 71 Ge atoms produced by solar neutrinos (pp and pep). As a monitor for background reactions in the target, the detectability of the 69 Ga (p,n) 69 Ge reaction by the decay 69 Ge (Tsub(1/2) = 39 h, 37% β + -decay, 63% electron capture) has been considered. To test the system, the detectors are mounted in a low level laboratory lead box. (orig./WB) [de

  17. Evidence for e+e− →γχc1,2 at center-of-mass energies from 4.009 to 4.360 GeV

    International Nuclear Information System (INIS)

    Ablikim, M.; Achasov, M. N.; Ai, X. C.; Albayrak, O.; Albrecht, M.

    2015-01-01

    Using data samples collected at center-of-mass energies of √s=4.009, 4.230, 4.260, and 4.360 GeV with the BESIII detector operating at the BEPCII collider, we perform a search for the process e + e − → γχ cJ (J=0, 1, 2) and find evidence for e + e − → γχ c1 and e + e − → γχ c2 with statistical significances of 3.0σ and 3.4σ, respectively. The Born cross sections σ B (e + e − → γχ cJ ), as well as their upper limits at the 90% confidence level (C.L.) are determined at each center-of-mass energy

  18. Purification, crystallization and preliminary X-ray diffraction analysis of the non-ATPase subunit Nas6 in complex with the ATPase subunit Rpt3 of the 26S proteasome from Saccharomyces cerevisiae

    International Nuclear Information System (INIS)

    Nakamura, Yoshihiro; Umehara, Takashi; Tanaka, Akiko; Horikoshi, Masami; Padmanabhan, Balasundaram; Yokoyama, Shigeyuki

    2007-01-01

    The complex of the non-ATPase subunit Nas6 with the C-terminal domain of the ATPase subunit Rpt3 of the 26S proteasome from S. cerevisiae was co-expressed in E. coli and purified to homogeneity. The crystals obtained from the protein complex diffracted to a resolution of 2.2 Å. The non-ATPase subunit Nas6, which is the human orthologue of gankyrin, was co-expressed with the C-terminal domain of the ATPase subunit Rpt3 of the yeast 26S proteasome in Escherichia coli, purified to near-homogeneity and crystallized using the hanging-drop vapour-diffusion method. The protein crystallized in space group P2 1 , with unit-cell parameters a = 60.38, b = 100.22, c = 72.20 Å, β = 94.70° and with three Nas6–Rpt3C molecules per asymmetric unit. The crystal diffracted to beyond 2.2 Å resolution using synchrotron radiation

  19. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy

    International Nuclear Information System (INIS)

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Terziotti, Daniela; Bonera, Emiliano; Spinella, Corrado; Nicotra, Giuseppe

    2012-01-01

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe. (paper)

  20. Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

    Science.gov (United States)

    Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Terziotti, Daniela; Bonera, Emiliano; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Spinella, Corrado; Nicotra, Giuseppe

    2012-02-03

    The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe.

  1. Growth of crystallized Ge films from VHF inductively-coupled plasma of H2-diluted GeH4

    International Nuclear Information System (INIS)

    Sakata, T.; Makihara, K.; Murakami, H.; Higashi, S.; Miyazaki, S.

    2007-01-01

    We have studied the Ge crystalline nucleation and film growth on quartz substrate at 250 deg. C from inductively-coupled plasma (ICP) of GeH 4 diluted with H 2 . The ICP was generated by supplying 60 MHz power to an external single-turn antenna which was placed on a quartz plate window of a stainless steel reactor and parallel to the substrate. We have found that the growth rate is significantly increased when the preferential growth of the (110) plane becomes pronounced after the formation of randomly-oriented crystalline network. The (110) oriented Ge films, of which average crystallinity is as high as 70%. The integrated intensity ratio of TO phonons in crystalline phase to those in disordered phase, were grown at a rate of ∼ 4.0 nm/s after the formation of amorphous incubation layer with a thickness of ∼ 0.1 μm on quartz

  2. Low temperature synthesis of Zn{sub 2}GeO{sub 4} nanorods and their photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Meng-Yen [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan (China); Huang, Sheng-Hsin [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Perng, Tsong-Pyng, E-mail: tpperng@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Department of Chemical Engineering and Materials Science, Yuan Ze University, Chungli 320, Taiwan (China)

    2013-04-15

    Zn{sub 2}GeO{sub 4} nanorods were synthesized using a simple reflux method. The product with 0.05 M Zn{sub 2}GeO{sub 4} is an aggregation of short nanorods with the diameter ranging from 30 to 50 nm. If the Zn{sub 2}GeO{sub 4} molarity was increased, the nanorods became longer and aggregated as bundles. An intense white-bluish photoluminescence (PL) was observed from these nanorods, and the PL band can be dissolved into four Gaussian peaks that are associated with the native defects. Since the PL intensity of the nanorods is comparable to that of sintered particles, this reflux method provides a time- and energy-efficient route to prepare Zn{sub 2}GeO{sub 4} phosphor. -- Highlights: ► Zn{sub 2}GeO{sub 4} nanorods were prepared by a simple refluxing method at low temperature without any surfactants. ► The morphologies and crystal structures of Zn{sub 2}GeO{sub 4} growth were studied from beginning to the end (0 min to 3 h). ► The photoluminescence of Zn{sub 2}GeO{sub 4} synthesized by different methods was studied.

  3. HPC4Energy Final Report : GE Energy

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Steven G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Van Zandt, Devin T. [GE Energy Consulting, Schenectady, NY (United States); Thomas, Brian [GE Energy Consulting, Schenectady, NY (United States); Mahmood, Sajjad [GE Energy Consulting, Schenectady, NY (United States); Woodward, Carol S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-02-25

    Power System planning tools are being used today to simulate systems that are far larger and more complex than just a few years ago. Advances in renewable technologies and more pervasive control technology are driving planning engineers to analyze an increasing number of scenarios and system models with much more detailed network representations. Although the speed of individual CPU’s has increased roughly according to Moore’s Law, the requirements for advanced models, increased system sizes, and larger sensitivities have outstripped CPU performance. This computational dilemma has reached a critical point and the industry needs to develop the technology to accurately model the power system of the future. The hpc4energy incubator program provided a unique opportunity to leverage the HPC resources available to LLNL and the power systems domain expertise of GE Energy to enhance the GE Concorda PSLF software. Well over 500 users worldwide, including all of the major California electric utilities, rely on Concorda PSLF software for their power flow and dynamics. This pilot project demonstrated that the GE Concorda PSLF software can perform contingency analysis in a massively parallel environment to significantly reduce the time to results. An analysis with 4,127 contingencies that would take 24 days on a single core was reduced to 24 minutes when run on 4,217 cores. A secondary goal of this project was to develop and test modeling techniques that will expand the computational capability of PSLF to efficiently deal with systems sizes greater than 150,000 buses. Toward this goal the matrix reordering implementation time was sped up 9.5 times by optimizing the code and introducing threading.

  4. Photoluminescence spectroscopies and temperature-dependent luminescence of Mn{sup 4+} in BaGe{sub 4}O{sub 9} phosphor

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Shaoan; Hu, Yihua, E-mail: huyh@gdut.edu.cn

    2016-09-15

    New non-rare-earth red phosphor BaGe{sub 4}O{sub 9}:Mn{sup 4+} was prepared successfully via the traditional solid state reaction method. The luminescent performance was investigated by the steady-state photoluminescence (PL) and temperature-dependent PL/decay measurements. The excitation band of BaGe{sub 4}O{sub 9}:Mn{sup 4+} phosphor covers a broad spectral region from 250 nm to 500 nm, which matches well with the commercial near-UV and blue LEDs. The concentration quenching of Mn{sup 4+} in BaGe{sub 4}O{sub 9}:Mn{sup 4+} occurs at a low content of 0.5% due to the dipole–dipole interaction. We gained insight into the temperature-dependent relative emission intensity of BaGe{sub 4}O{sub 9}:Mn{sup 4+} phosphor, and determined the luminescence quenching temperature and the activation energy for thermal quenching (∆E) to be ~150 K and ~0.17 eV, respectively.

  5. Tuning ZrFe{sub 4}Si{sub 2} by Ge and Y substitution

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Katharina [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Institute of Solid State Physics, TU Dresden (Germany); Mufti, Nandang; Bergmann, Christoph; Rosner, Helge; Geibel, Christoph [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Goltz, Til; Klauss, Hans-Henning [Institute of Solid State Physics, TU Dresden (Germany); Woike, Theo [Institute for Structural Physics, TU Dresden (Germany)

    2016-07-01

    The intermetallic compound series AFe{sub 4}X{sub 2} (A = Y, Lu, Zr; X = Si, Ge) presents a rare case of magnetic frustrated metallic systems. In particular ZrFe{sub 4}Si{sub 2} is of strong interest because our results indicate this system to be very close to a quantum critical point (QCP) where Fe magnetic order disappears. To get a deeper insight into its ground state, we performed a detailed study of Ge and Y substituted ZrFe{sub 4}Si{sub 2}. The isovalent substitution of Ge for Si induces a negative chemical pressure as Ge is larger than Si. As expected from this, the substitution results in the formation of a well-defined antiferromagnetic order with Neel temperatures increasing up to 25 K at 40 % Ge. This confirms ZrFe{sub 4}Si{sub 2} to be extremely close to the QCP, just on the magnetic side of it. With the second substitution series Y{sub x}Zr{sub 1-x}Fe{sub 4}Si{sub 2} we investigate the development from the highly reduced antiferromagnetic order in ZrFe{sub 4}Si{sub 2} towards the two magnetic transitions at 56 K and 76 K, which we see in YFe{sub 4}Si{sub 2}.

  6. Multiplicity distributions of projectile fragments in interactions of nuclei with emulsion at 4.1-4.5 A GeV/c

    Energy Technology Data Exchange (ETDEWEB)

    Fakhraddin, S; Rahim, Magda A [Physics Department, Faculty of Science, Sana' a University, Republic of Yemen (Yemen)], E-mail: sakinafa1@hotmail.com, E-mail: dr.magda2006@hotmail.com

    2008-07-15

    The results of our systematic studies of projectile fragments (PFs) multiplicity distributions in interactions of {sup 4}He, {sup 12}C, {sup 16}O, {sup 22}Ne and {sup 28}Si with emulsion at 4.1-4.5 A GeV/c are presented in this paper. The mean values for the three different multiplicities of PFs at nearly the same energy are given. The dependence of these mean values on the projectile mass number A{sub p}, as well as the dependence of the PFs on target groups (H, CNO and AgBr), has been investigated.

  7. Note on possible glueball production in anti p4He reactions at 0.6 GeV/c incident momentum

    International Nuclear Information System (INIS)

    Breivik, F.O.; Haatuft, A.; Halsteinslid, A.

    1990-10-01

    The invariant mass distribution of six-particle systems in the final states of anti p 4 He-reactions at 0.6 GeV/c incident momentum shows two narrow peaks at about 1500 and 1850 MeV/c 2 which may be due to the production of glueballs. 12 refs., 4 figs

  8. Magnetic properties of the germanides RE3Pt4Ge6 (RE=Y, Pr, Nd, Sm, Gd-Dy)

    International Nuclear Information System (INIS)

    Eustermann, Fabian; Eilers-Rethwisch, Matthias; Renner, Konstantin; Hoffmann, Rolf-Dieter; Poettgen, Rainer; Janka, Oliver; Oldenburg Univ.

    2017-01-01

    The germanides RE 3 Pt 4 Ge 6 (RE=Y, Pr, Nd, Sm, Gd-Dy) have been synthesized by arc-melting of the elements followed by inductive annealing to improve the crystallinity and allow for structural order. The compounds have been studied by powder X-ray diffraction; additionally the structure of Y 3 Pt 4 Ge 6 has been refined from single-crystal X-ray diffractometer data. It exhibits a (3+1)D modulated structure, indicating isotypism with Ce 3 Pt 4 Ge 6 . The crystal structure can be described as an intergrowth between YIrGe 2 - and CaBe 2 Ge 2 -type slabs along [100]. Temperature-dependent magnetic susceptibility measurements showed Pauli paramagnetism for Y 3 Pt 4 Ge 6 and Curie-Weiss paramagnetism for Pr 3 Pt 4 Ge 6 and Nd 3 Pt 4 Ge 6 . Sm 3 Pt 4 Ge 6 exhibits van Vleck paramagnetism, while antiferromagnetic ordering at T N =8.1(1) K and T N =11.0(1) K is observed for Gd 3 Pt 4 Ge 6 and Tb 3 Pt 4 Ge 6 , respectively.

  9. Lattice parameter values and phase transitions for the Cu2Cd1-zMn zGeSe4 and Cu2Cd1-zFe zGeSe4 alloys

    International Nuclear Information System (INIS)

    Quintero, E.; Tovar, R.; Quintero, M.; Delgado, G.E.; Morocoima, M.; Caldera, D.; Ruiz, J.; Mora, A.E.; Briceno, M.; Fernandez, J.L.

    2007-01-01

    X-ray powder diffraction measurements and differential thermal analysis (DTA) were made on polycrystalline samples of the Cu 2 Cd 1-z Mn z GeSe 4 and Cu 2 Cd 1-z Fe z GeSe 4 alloy systems. The diffraction patterns were used to show the equilibrium conditions and to derive lattice parameter values. The effect of the annealing temperature and cooling rate to room temperature are discussed. For the Cu 2 Cd 1-z Fe z GeSe 4 system, only two single solid phase fields, the tetragonal stannite α and the wurtz-stannite δ structures were found to occur in the diagram. For the Cu 2 Cd 1-z Mn z GeSe 4 system, in addition to the tetragonal stannite α and the wurtz-stannite δ phases, MnSe was found to exist in the diagram. The DTA experiments showed that the cooling curves for both systems exhibited effects of undercooling

  10. Improvement of photoluminescence from Ge layer with patterned Si{sub 3}N{sub 4} stressors

    Energy Technology Data Exchange (ETDEWEB)

    Oda, Katsuya, E-mail: Katsuya.Oda.cb@hitachi.com; Okumura, Tadashi; Tani, Kazuki; Saito, Shin-ichi; Ido, Tatemi

    2014-04-30

    Lattice strain applied by patterned Si{sub 3}N{sub 4} stressors in order to improve the optical properties of Ge layers directly grown on a Si substrate was investigated. Patterned Si{sub 3}N{sub 4} stressors were fabricated by various methods and their effects on the strain and photoluminescence were studied. Although we found that when the stressor was fabricated by thermal chemical vapor deposition (CVD), the Ge waveguide was tensilely and compressively strained in the edge and center positions, respectively, and photoluminescence (PL) could be improved by decreasing the width of the waveguide, the crystallinity of the Ge waveguide was degraded by the thermal impact of the deposition process. Low-temperature methods were therefore used to make the patterned stressors. The tensile strain of the Ge layer increased from 0.14% to 0.2% when the stressor was grown by plasma enhanced CVD at 350 °C, but the effects of the increased tensile strain could not be confirmed because the Si{sub 3}N{sub 4} layer was unstable when irradiated with the excitation light used in photoluminescence measurements. Si{sub 3}N{sub 4} stressors grown by inductively coupled plasma CVD at room temperature increased the tensile strain of the Ge layer up to 0.4%, thus red-shifting the PL peak and obviously increasing the PL intensity. These results indicate that the Si{sub 3}N{sub 4} stressors fabricated by the room-temperature process efficiently improve the performance of Ge light-emitting devices. - Highlights: • Ge layers were directly grown on a Si substrate by low-temperature epitaxial growth. • Si{sub 3}N{sub 4} stressors were fabricated on the Ge layers by various methods. • Tensile strain of the Ge layers was improved by the Si{sub 3}N{sub 4} stressors. • Photoluminescence (PL) intensity was increased with the Si{sub 3}N{sub 4} stressors. • Red-shift of the PL spectra was observed from the tensile strained Ge layers.

  11. Observation of a resonance at 4.4 GeV and additional structure near 4.1 GeV in e+e- annihilation

    International Nuclear Information System (INIS)

    Siegrist, J.; Abrams, G.S.; Boyarski, A.M.; Breidenbach, M.; Bulos, F.; Chinowsky, W.; Feldman, G.J.; Friedberg, C.E.; Fryberger, D.; Goldhaber, G.; Hanson, G.; Hartill, D.L.; Jaros, J.; Jean-Marie, B.; Kadyk, J.A.; Larsen, R.R.; Luke, D.; Luth, V.; Lynch, H.L.; Madaras, R.; Morehouse, C.C.; Nguyen, H.K.; Paterson, J.M.; Perl, M.L.; Peruzzi, I.; Pierre, F.M.; Piccolo, M.; Pun, T.P.; Rapidis, P.; Richter, B.; Sadoulet, B.; Schwitters, R.F.; Tanenbaum, W.; Trilling, G.H.; Vannucci, F.; Whitaker, J.S.; Winkelman, F.C.; Wiss, J.E.

    1976-01-01

    We observe a resonancelike structure in the total cross section for hadron production by e + e - colliding beams at a mass of 4414 +- 7 MeV having a total width GAMMA = 33 +- 10 MeV. From the area under this resonance, we deduce the partial width to electron pairs to be GAMMA/sub ee/ = 440 +- 140 eV. Further structure of comparable width is present near 4.1 GeV

  12. Investigations of the R5(SixGe1-x)4 Intermetallic Compounds by X-Ray Resonant Magnetic Scattering

    International Nuclear Information System (INIS)

    Lizhi Tan

    2008-01-01

    The XRMS experiment on the Gd 5 Ge 4 system has shown that, below the Neel temperature, T N = 127 K, the magnetic unit cells is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are aligned along the c-axis and the c-components of the magnetic moments at the three different sites are equal. The ferromagnetic slabs are stacked antiferromagnetically along the b-direction. They found an unusual order parameter curve in Gd 5 Ge 4 . A spin-reorientation transition is a possibility in Gd 5 Ge 4 , which is similar to the Tb 5 Ge 4 case. Tb 5 Ge 4 possesses the same Sm 5 Ge 4 -type crystallographic structure and the same magnetic space group as Gd 5 Ge 4 does. The difference in magnetic structure is that Tb 5 Ge 4 has a canted one but Gd 5 Ge 4 has nearly a collinear one in the low temperature antiferromagnetic phase. The competition between the magneto-crystalline anisotropy and the nearest-neighbor magnetic exchange interactions may allow a 3-dimensional canted antiferromagnetic structure in Tb 5 Ge 4 . The spin-reorientation transition in both Gd 5 Ge 4 and Tb 5 Ge 4 may arise from the competition between the magnetic anisotropy from the spin-orbit coupling of the conduction electrons and the dipolar interactions anisotropy

  13. Revision of the Ge–Ti phase diagram and structural stability of the new phase Ge4Ti5

    International Nuclear Information System (INIS)

    Bittner, Roland W.; Colinet, Catherine; Tedenac, Jean-Claude; Richter, Klaus W.

    2013-01-01

    Highlights: •New compound Ge 4 Ti 5 found by experiments and by DFT ground state calculations. •Enthalpies of formation calculated for different Ge–Ti compounds. •Modifications of the Ge–Ti phase diagram suggested. -- Abstract: The binary phase diagram Ge–Ti was investigated experimentally by powder X-ray diffraction, scanning electron microscopy including EDX analysis, and differential thermal analysis. Total energies of the compounds GeTi 3 , GeTi 2 , Ge 3 Ti 5 , Ge 4 Ti 5 , Ge 5 Ti 6 , GeTi and Ge 2 Ti were calculated for various structure types employing electronic density-functional theory (DFT). Experimental studies as well as electronic calculations show the existence of a new phase Ge 4 Ti 5 (Ge 4 Sm 5 -type, oP36, Pnma) which is formed in a solid state reaction Ge 3 Ti 5 + Ge 5 Ti 6 = Ge 4 Ti 5 . In addition, a significant homogeneity range was observed for the compound Ge 3 Ti 5 and the composition of the liquid phase in the eutectic reaction L = Ge + Ge 2 Ti was found to be at significant higher Ge-content (97.5 at.% Ge) than reported in previous studies. Based on these new results, a modified phase diagram Ge–Ti is suggested. The zero-temperature lattice parameters and the formation enthalpies determined by DTF calculations were found to be in good agreement with experimental data

  14. The main ring polarimeter at KEK 12 GeV PS

    International Nuclear Information System (INIS)

    Sato, Hikaru; Hiramatsu, Shigenori; Toyama, Takeshi; Arakawa, Dai; Sakamoto, Hiroshi; Imai, Ken-ichi; Tamura, Norio.

    1984-03-01

    An internal polarimeter was constructed to detect the beam polarization from T sub(P) = 500 MeV to 12 GeV. The polarimeter was installed in the main ring of KEK proton synchrotron and successfully used for the measurement of the beam polarization at 500 MeV in order to study depolarizing resonances during acceleration in the booster synchrotron. We report the design and the performance of the polarimeter and the results of the first measurement. (author)

  15. Ge{sup 4+} doped TiO{sub 2} for stoichiometric degradation of warfare agents

    Energy Technology Data Exchange (ETDEWEB)

    Stengl, Vaclav, E-mail: stengl@iic.cas.cz [Department of Solid State Chemistry, Institute of Inorganic Chemistry AS CR v.v.i., 250 68 Rez (Czech Republic); Grygar, Tomas Matys [Department of Solid State Chemistry, Institute of Inorganic Chemistry AS CR v.v.i., 250 68 Rez (Czech Republic); Oplustil, Frantisek; Nemec, Tomas [Military Technical Institute of Protection Brno, Veslarska 230, 628 00 Brno (Czech Republic)

    2012-08-15

    Highlights: Black-Right-Pointing-Pointer We prepared nanodisperse Ge{sup 4+} doped titania by a novel synthesis method. Black-Right-Pointing-Pointer Synthesis does not involve organic solvents, organometallics nor thermal processes. Black-Right-Pointing-Pointer The prepared materials are efficient in removal of chemical warfare agents. Black-Right-Pointing-Pointer Ge{sup 4+} doping improves rate of removal of soman and agent VX by TiO{sub 2}. - Abstract: Germanium doped TiO{sub 2} was prepared by homogeneous hydrolysis of aqueous solutions of GeCl{sub 4} and TiOSO{sub 4} with urea. The synthesized samples were characterized by X-ray diffraction, scanning electron microscopy, EDS analysis, specific surface area (BET) and porosity determination (BJH). Ge{sup 4+} doping increases surface area and content of amorphous phase in prepared samples. These oxides were used in an experimental evaluation of their reactivity with chemical warfare agent, sulphur mustard, soman and agent VX. Ge{sup 4+} doping worsens sulphur mustard degradation and improves soman and agent VX degradation. The best degree of removal (degradation), 100% of soman, 99% of agent VX and 95% of sulphur mustard, is achieved with sample with 2 wt.% of germanium.

  16. Neutron production in bombardments of thin and thick W, Hg, Pb targets by 0.4, 0.8, 1.2, 1.8 and 2.5 GeV protons

    International Nuclear Information System (INIS)

    Letrourneau, A.; Galin, J.; Goldenbaum, F.; Lott, B.; Peghaire, A.; Enke, M.; Hilscher, D.; Jahnke, U.; Nuenighoff, K.; Filges, D.; Neef, R.D.; Paul, N.; Schaal, H.; Sterzenbach, G.; Tietze, A.

    2000-05-01

    Neutron experimental data relevant to the design of the target of neutron spallation sources are presented and discussed. The data include the reaction cross sections for W, Hg and Pb investigated with 0.4, 0.8, 1.2, 1.8 and 2.5 GeV proton beams as well as the neutron production, neutron multiplicity distribution, as determined event per event using a high efficiency detector. The production as a function of target material is investigated for both thin (with a single reaction) and thick targets (multiple reactions). Comparisons are made with the predictions of a high energy transport code. (authors)

  17. New solar axion search using the CERN Axion Solar Telescope with 4He filling

    Science.gov (United States)

    Arik, M.; Aune, S.; Barth, K.; Belov, A.; Bräuninger, H.; Bremer, J.; Burwitz, V.; Cantatore, G.; Carmona, J. M.; Cetin, S. A.; Collar, J. I.; Da Riva, E.; Dafni, T.; Davenport, M.; Dermenev, A.; Eleftheriadis, C.; Elias, N.; Fanourakis, G.; Ferrer-Ribas, E.; Galán, J.; García, J. A.; Gardikiotis, A.; Garza, J. G.; Gazis, E. N.; Geralis, T.; Georgiopoulou, E.; Giomataris, I.; Gninenko, S.; Gómez Marzoa, M.; Hasinoff, M. D.; Hoffmann, D. H. H.; Iguaz, F. J.; Irastorza, I. G.; Jacoby, J.; Jakovčić, K.; Karuza, M.; Kavuk, M.; Krčmar, M.; Kuster, M.; Lakić, B.; Laurent, J. M.; Liolios, A.; Ljubičić, A.; Luzón, G.; Neff, S.; Niinikoski, T.; Nordt, A.; Ortega, I.; Papaevangelou, T.; Pivovaroff, M. J.; Raffelt, G.; Rodríguez, A.; Rosu, M.; Ruz, J.; Savvidis, I.; Shilon, I.; Solanki, S. K.; Stewart, L.; Tomás, A.; Vafeiadis, T.; Villar, J.; Vogel, J. K.; Yildiz, S. C.; Zioutas, K.; CAST Collaboration

    2015-07-01

    The CERN Axion Solar Telescope (CAST) searches for a →γ conversion in the 9 T magnetic field of a refurbished LHC test magnet that can be directed toward the Sun. Two parallel magnet bores can be filled with helium of adjustable pressure to match the x-ray refractive mass mγ to the axion search mass ma. After the vacuum phase (2003-2004), which is optimal for ma≲0.02 eV , we used 4He in 2005-2007 to cover the mass range of 0.02-0.39 eV and 3He in 2009-2011 to scan from 0.39 to 1.17 eV. After improving the detectors and shielding, we returned to 4He in 2012 to investigate a narrow ma range around 0.2 eV ("candidate setting" of our earlier search) and 0.39-0.42 eV, the upper axion mass range reachable with 4He, to "cross the axion line" for the KSVZ model. We have improved the limit on the axion-photon coupling to ga γ<1.47 ×10-10 GeV-1 (95% C.L.), depending on the pressure settings. Since 2013, we have returned to the vacuum and aim for a significant increase in sensitivity.

  18. eDT and Model-based Configuration of 12GeV CEBAF

    Energy Technology Data Exchange (ETDEWEB)

    Turner, Dennison L. [Jefferson Lab, Newport News, VA (United States)

    2015-09-01

    This poster will discuss model-driven setup of CEBAF for the 12GeV era, focusing on the elegant Download Tool (eDT). eDT is a new operator tool that generates magnet design setpoints for various machine energies and pass configurations. eDT was developed in the effort towards a process for reducing machine configuration time and reproducibility by way of an accurate accelerator model.

  19. 27 CFR 4.46 - Certificate of nonstandard fill.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Certificate of nonstandard fill. 4.46 Section 4.46 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS LABELING AND ADVERTISING OF WINE Requirements for Withdrawal of Wine From...

  20. Electronic and magnetic properties of quasi-skutterudite PrCo2Ga8 compound

    Science.gov (United States)

    Ogunbunmi, Michael O.; Sondezi, Buyisiwe M.; Nair, Harikrishnan S.; Strydom, André M.

    2018-05-01

    PrCo2Ga8 is an orthorhombic quasi-skutterudite type compound which crystallizes in the CaCo2Al8 structure type, with space group Pbam (No. 55). The Pr3+ ion has a site symmetry of Cs which predicts a crystal electric field (CEF) level splitting into 9 singlets for J = 4. However, a phase transition at Tm = 1.28 K is observed in electrical resistivity and specific heat results and is reported in this paper. The electrical resistivity shows an upturn below Tm due to the superzone-gap formation. This transition is tuneable in fields and is suppressed to lower temperatures with applied magnetic fields. The electronic specific heat Cp(T) / T increases below Tm and reaches a value of 7.37 J/(mol K2) at 0.4 K. The Sommerfeld coefficient, γ extracted from the low temperature analysis of C4f(T) / T is 637 mJ/(mol K2) indicating a possible mass enhancement of the quasiparticles. The calculated entropy value of 3.05 J/(mol K) is recovered around Tm exhibiting almost 53% of Rln2, where R is the universal gas constant. Magnetic susceptibility results obeys the Curie-Weiss law for data above 100 K with an estimated effective magnetic moment, μeff = 3.37 μB/Pr and Weiss temperature, θp = -124 K.

  1. Influence of Ni impurities on the thermoelectric properties of Ca-partially filled skutterudites Ca.sub.x./sub.Co.sub.4./sub.Sb.sub.12./sub..

    Czech Academy of Sciences Publication Activity Database

    Puyet, M.; Lenoir, B.; Dauscher, A.; Candolfi, C.; Hejtmánek, Jiří; Stiewe, C.; Müller, E.

    2012-01-01

    Roč. 101, č. 22 (2012), "222105-1"-"222105-4" ISSN 0003-6951 Institutional research plan: CEZ:AV0Z10100521 Keywords : performance * barium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.794, year: 2012 http://apl.aip.org/

  2. Commissioning and operational results of the 12 GeV helium compression system at Jlab

    Energy Technology Data Exchange (ETDEWEB)

    Knudsen, Peter N. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Ganni, Venkatarao [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Dixon, Kelly D. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Norton, Robert O. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Creel, Jonathan D. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2015-12-01

    The new compressor system at Jefferson Lab (JLab) for the 12 GeV upgrade was commissioned in the spring of 2013 and incorporates many design changes, discussed in previous publications, to improve the operational range, efficiency, reliability and maintainability as compared to previous compressor skids used for this application. The 12 GeV helium compression system has five compressors configured with four pressure levels supporting three pressure levels in the new cold box. During compressor commissioning the compressors were operated independent of the cold box over a wide range of process conditions to verify proper performance including adequate cooling and oil removal. Isothermal and volumetric efficiencies over these process conditions for several built-involume ratios were obtained. This paper will discuss the operational envelope results and the modifications/improvements incorporated into the skids.

  3. Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

    KAUST Repository

    Sarath Kumar, S. R.

    2011-10-24

    Lattice dynamics, low-temperature electrical transport, and high-temperature thermoelectric properties of (In, Yb)-doped CoSb3thin films on different substrates are reported. Pulsed laser deposition under optimized conditions yielded single-phase polycrystalline skutterudite films. Raman spectroscopy studies suggested that In and Yb dopants occupy the cage sites in the skutterudite lattice. Low-temperature electrical transport studies revealed the n-type semiconducting nature of the films with extrinsic and intrinsic conduction mechanisms, in sharp contrast to the degenerate nature reported for identical bulk samples. Calculations yielded a direct bandgap close to 50 meV with no evidence of an indirect gap. The carrier concentration of the films was identical to that reported for the bulk and increased with temperature beyond 250 K. The higher resistivity exhibited is attributed to the enhanced grain boundary scattering in films with a high concentration of grains. The maximum power factor of ∼0.68 W m−1 K−1 obtained at 660 K for the film on glass is found to be nearly four times smaller compared to that reported for the bulk. The observed difference in the power factors of the films on different substrates is explained on the basis of the diffusion of oxygen from the substrates and the formation of highly conducting CoSb2 phase upon the oxidation of CoSb3.

  4. Quasi-exclusive measurement of /sup 12/C(/sup 12/C, 3. cap alpha. )X at 2. 1 GeV/nucleon

    Energy Technology Data Exchange (ETDEWEB)

    Engelage, J; Baumgartner, M; Greiner, D E; Lindstrom, P J; Olson, D L; Wada, R; Crawford, H J; Webb, M L

    1986-05-29

    A study of the reaction /sup 12/C(/sup 12/C,3..cap alpha..)X at 2.1 GeV/nucleon has been completed. The energy and momentum transferred to the /sup 12/C projectile and the cross section for the dissociation of /sup 12/C into three alpha particles have been measured, 9.7 (+5.0/-2.5) millibarns. It is found that the results from this analysis are inconsistent with the predictions of current theoretical models for peripheral relativistic heavy ion collisions.

  5. Correlated decay curve measurement of the lifetime of the 4p2sup(p)sup(o) term in Ge IV

    International Nuclear Information System (INIS)

    Pinnington, E.H.; Bahr, J.L.; Irwin, D.J.G.

    1981-01-01

    An ANDC analysis of beam-foil decay curves for the 4s-4p, 4p-4d and 4p-5s transitions in Ge IV yield 4p lifetimes 0.91 +- 0.05 ns (j = 1/2) and 0.82 +- 0.05 ns (j = 3/2) and hence a 4s-4p multiplet f value of 0.77 +- 0.05, in excellent agreement with MCHF and RHF (+core polarization) calculations. (orig.)

  6. High spin states in 66,68Ge

    International Nuclear Information System (INIS)

    Hermkens, U.; Becker, F.; Eberth, J.; Freund, S.; Mylaeus, T.; Skoda, S.; Teichert, W.; Werth, A. v.d.

    1992-01-01

    High spin states of 66,68 Ge have been investigated at the FN Tandem accelerator of the University of Koeln via the reactions 40 Ca( 32 S,α2p,4p) 66,68 Ge at a beam energy of 100 MeV and 58 Ni( 16 O,α2p) 68 Ge at 65 MeV. The OSIRIS spectrometer with 12 escape suppressed Ge detectors was used to measure γγ coincidences and γ-ray angular distributions. In 66 Ge ( 68 Ge) 33 (22) new levels were found and 63 (62) new γ-transitions were placed in the level scheme. Both nuclei show a rather complicated but similar excitation pattern, ruled by the interplay of quasiparticle and collective degrees of freedom. The results are compared to the recently published EXVAM calculations for 68 Ge. (orig.)

  7. Systematic study of K+ and K- charge exchange at 8.36 and 12.8 GeV/c

    International Nuclear Information System (INIS)

    Gilchriese, M.G.D.

    1977-08-01

    The results of a wire chamber spectrometer experiment at the Stanford Linear Accelerator Center to study kaon charge exchange reactions are reported. The salient experimental features include good relative normalization between the K + and K - charge exchange reactions and a large increase, with respect to previous experiments, in the number of events obtained for K + n charge exchange at the higher energy. Approximately 1500 events at 12.8 GeV/c and 250 events at 8.36 GeV/c were obtained for each of the reactions K + n → K 0 p, K - p → anti K 0 n, K + p → K 0 Δ 2+ and K - n → anti K 0 Δ - . The results of the experiment show that the K + charge exchange cross sections are larger than the K - cross sections at both energies. In particular it is found that sigma/sub tot/ (K + n → K 0 p)/sigma/sub tot/ (K - p → anti K 0 n) is 1.37 +- 0.22 at 8.36 GeV/c and 1.38 +- 0.09 at 12.8 GeV/c. The ratio of these two reactions is also consistent with no momentum transfer dependence at either beam energy. Similarly it was determined that sigma/sub tot/ (K + p → K 0 Δ 2+ )/sigma/sub tot/ (K - n → anti K 0 Δ - ) is 1.05 +- 0.16 at 8.36 GeV/c and 1.56 +- 0.08 at 12.8 GeV/c. The ratio of these two reactions is also consistent with momentum transfer independence for both beam energies. These results are in clear conflict with the predictions of exchange degenerate Regge pole models

  8. Ge14 Br8 (PEt3 )4 : A Subhalide Cluster of Germanium.

    Science.gov (United States)

    Kunz, Tanja; Schrenk, Claudio; Schnepf, Andreas

    2018-04-03

    Heating a metastable solution of Ge I Br to room temperature led to the first structurally characterized metalloid subhalide cluster Ge 14 Br 8 (PEt 3 ) 4 (1). Furthermore 1 can be seen as the first isolated binary halide cluster on the way from Ge I Br to elemental germanium, giving insight into the complex reaction mechanism of its disproportionation reaction. Quantum chemical calculations further indicate that a classical bonding situation is realized within 1 and that the last step of the formation of 1 might include the trapping of GeBr 2 units. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Hypernuclear production cross section in the reaction of 6Li + 12C at 2A GeV

    Directory of Open Access Journals (Sweden)

    C. Rappold

    2015-07-01

    Full Text Available Hypernuclear production cross sections have been deduced for the first time with induced reaction of heavy ion beam on fixed target and by means of the invariant mass method by the HypHI Collaboration exploiting the reaction of 6Li + 12C at 2A GeV or sNN=2.70 GeV. A production cross section of 3.9±1.4 μb for 3ΛH and of 3.1±1.0 μb for 4ΛH respectively in the projectile rapidity region was inferred as well as the total production cross section of the Λ hyperon was measured and found to be equal to 1.7±0.8 mb. A global fit based on a Bayesian approach was performed in order to include and propagate statistical and systematic uncertainties. Production ratios of 3ΛH/4ΛH, 3ΛH/Λ and 4ΛH/Λ were included in the inference procedure. The strangeness population factors S3 and S4 of 3ΛH and 4ΛH respectively were extracted. In addition, the multiplicities of the Λ hyperon, 3ΛH, and 4ΛH together with the rapidity and transversal momentum density distributions of the observed hypernuclei were extracted and reported.

  10. Structural and Magnetothermal Properties of Compounds: Yb5SixGe4-x,Sm5SixGe4-x, EuO, and Eu3O4

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Kyunghan [Iowa State Univ., Ames, IA (United States)

    2007-01-01

    The family of R5SixGe4-x alloys demonstrates a variety of unique physical phenomena related to magneto-structural transitions associated with reversible breaking and reforming of specific bonds that can be controlled by numerous external parameters such as chemical composition, magnetic field, temperature, and pressure. Therefore, R5SixGe4-x systems have been extensively studied to uncover the mechanism of the extraordinary magneto-responsive properties including the giant magnetoresistance (GMR) and colossal magnetostriction, as well as giant magnetocaloric effect (GMCE). Until now, more than a half of possible R5SixGe4-x pseudobinary systems have been completely or partially investigated with respect to their crystallography and phase relationships (R = La, Pr, Nd, Gd, Tb, Dy, Er, Lu, Y). Still, there are other R5SixGe4-x systems (R = Ce, Sm, Ho, Tm, and Yb) that are not studied yet. Here, we report on phase relationships and structural, magnetic, and thermodynamic properties in the Yb5SixGe4-xand Sm5SixGe4-x pseudobinary systems, which may exhibit mixed valence states. The crystallography, phase relationships, and physical properties of Yb5SixGe4-x alloys with 0 ≤ x ≤ 4 have been examined by using single crystal and powder x-ray diffraction at room temperature, and dc magnetization and heat capacity measurements between 1.8 K and 400 K in magnetic fields ranging from 0 to 7 T. Unlike the majority of R5SixGe4-x systems studied to date, where R is the rare earth metal, all Yb-based germanide-silicides with the 5:4 stoichiometry crystallize in the same Gd5Si4-type structure. The magnetic properties of Yb5SixGe4-x materials are nearly composition

  11. Application of JLab 12GeV helium refrigeration system for the FRIB accelerator at MSU

    International Nuclear Information System (INIS)

    Ganni, V.; Knudsen, P.; Arenius, D.; Casagrande, F.

    2014-01-01

    The planned approach to have a turnkey helium refrigeration system for the MSU-FRIB accelerator system, encompassing the design, fabrication, installation and commissioning of the 4.5-K refrigerator cold box(es), cold compression system, warm compression system, gas management, oil removal and utility/ancillary systems, was found to be cost prohibitive. Following JLab’s suggestion, MSU-FRIB accelerator management made a formal request to evaluate the applicability of the recently designed 12GeV JLab cryogenic system for this application. The following paper will outline the findings and the planned approach for the FRIB helium refrigeration system

  12. Magnetotransport of CaCu3Mn4O12 complex perovskite derivatives

    International Nuclear Information System (INIS)

    Sanchez-Benitez, J.; Andres, A. de; Garcia-Hernandez, M.; Alonso, J.A.; Martinez-Lope, M.J.

    2006-01-01

    Neutron powder diffraction, magnetic and magnetotransport studies were carried out on new derivatives of the CaCu 3 Mn 4 O 12 (A'A 3 B 4 O 12 ) complex perovskite. The samples were prepared in polycrystalline form under moderate pressure conditions. Substitutions at A and A' sites of CaCu 3 Mn 4 O 12 , with only Mn 4+ and insulating behavior, imply electron doping that affects the magnetic and transport properties. X-ray Absorption Spectroscopy showed that Mn 3+ /Mn 4+ valence mixing occurs only at B site, progressively filling the e g band and providing the metallic character in these compounds, as we observe in most of these samples. A semiconducting behavior is observed in samples with 50% Mn 3+ at B site. This can be understood by the opening of a gap in the conduction band corresponding to the half filling of the e g states. This is the case of the tetravalent rare earth doped samples (Ce and Th at A' site) and of the appropriate A site doped Ca(CuMn 2 )Mn 4 O 12 sample. At the strongly distorted A positions, Mn 3+ , with localized e g electrons, act as magnetic impurities at very low temperatures (<40 K) giving rise to the observed upturn in the resistivity. The magnetic origin of this scattering is evidenced by its drastic reduction under a magnetic field

  13. Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

    International Nuclear Information System (INIS)

    Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M.; Sun, X.; Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S.

    2011-01-01

    We investigated the molecular beam deposition of Al 2 O 3 on Ge 0.95 Sn 0.05 surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge 1-x Sn x and Ge/Ge 1-x Sn x surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al 2 O 3 high-κ gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge 1-x Sn x /Al 2 O 3 gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge 1-x Sn x layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D it ) in the range of 10 12 eV -1 cm -2 in mid gap and higher close to the valence band edge.

  14. Hybridization Gap and Dresselhaus Spin Splitting in EuIr4In2Ge4.

    Science.gov (United States)

    Calta, Nicholas P; Im, Jino; Rodriguez, Alexandra P; Fang, Lei; Bugaris, Daniel E; Chasapis, Thomas C; Freeman, Arthur J; Kanatzidis, Mercouri G

    2015-08-03

    EuIr4In2Ge4 is a new intermetallic semiconductor that adopts a non-centrosymmetric structure in the tetragonal I4̄2m space group with unit cell parameters a=6.9016(5) Å and c=8.7153(9) Å. The compound features an indirect optical band gap E(g)=0.26(2) eV, and electronic-structure calculations show that the energy gap originates primarily from hybridization of the Ir 5d orbitals, with small contributions from the Ge 4p and In 5p orbitals. The strong spin-orbit coupling arising from the Ir atoms, and the lack of inversion symmetry leads to significant spin splitting, which is described by the Dresselhaus term, at both the conduction- and valence-band edges. The magnetic Eu(2+) ions present in the structure, which do not play a role in gap formation, order antiferromagnetically at 2.5 K. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. DC heating induced shape transformation of Ge structures on ultraclean Si(5 5 12) surfaces.

    Science.gov (United States)

    Dash, J K; Rath, A; Juluri, R R; Raman, P Santhana; Müller, K; Rosenauer, A; Satyam, P V

    2011-04-06

    We report the growth of Ge nanostructures and microstructures on ultraclean, high vicinal angle silicon surfaces and show that self-assembled growth at optimum thickness of the overlayer leads to interesting shape transformations, namely from nanoparticle to trapezoidal structures, at higher thickness values. Thin films of Ge of varying thickness from 3 to 12 ML were grown under ultrahigh vacuum conditions on a Si(5 5 12) substrate while keeping the substrate at a temperature of 600 °C. The substrate heating was achieved by two methods: (i) by heating a filament under the substrate (radiative heating, RH) and (ii) by passing direct current through the samples in three directions (perpendicular, parallel and at 45° to the (110) direction of the substrate). We find irregular, more spherical-like island structures under RH conditions. The shape transformations have been found under DC heating conditions and for Ge deposition more than 8 ML thick. The longer sides of the trapezoid structures are found to be along (110) irrespective of the DC current direction. We also show the absence of such a shape transformation in the case of Ge deposition on Si(111) substrates. Scanning transmission electron microscopy measurements suggested the mixing of Ge and Si. This has been confirmed with a quantitative estimation of the intermixing using Rutherford backscattering spectrometry (RBS) measurements. The role of DC heating in the formation of aligned structures is discussed. Although the RBS simulations show the presence of a possible SiO(x) layer, under the experimental conditions of the present study, the oxide layer would not play a role in determining the formation of the various structures that were reported here.

  16. Surfactant-thermal syntheses, structures, and magnetic properties of Mn-Ge-sulfides/selenides

    KAUST Repository

    Zhang, Guodong

    2014-10-06

    Although either surfactants or amines have been investigated to direct the crystal growth of metal chalcogenides, the synergic effect of organic amines and surfactants to control the crystal growth has not been explored. In this report, several organic bases (hydrazine monohydrate, ethylenediamine (en), 1,2-propanediamine (1,2-dap), and 1,3-propanediamine (1,3-dap)) have been employed as structure-directing agents (SDAs) to prepare four novel chalcogenides (Mn3Ge2S7(NH3)4 (1), [Mn(en)2(H2O)][Mn(en)2MnGe3Se9] (2), (1,2-dapH)2{[Mn(1,2-dap)2]Ge2Se7} (3), and (1,3-dapH)(puH)MnGeSe4(4) (pu = propyleneurea) under surfactant media (PEG-400). These as-prepared new crystalline materials provide diverse metal coordination geometries, including MnS3N tetrahedra, MnGe2Se7 trimer, and MnGe3Se10 T2 cluster. Compounds 1-3 have been fully characterized by single-crystal X-ray diffraction (XRD), powder XRD, UV-vis spectra, Fourier transform infrared spectroscopy, and thermogravimetric analysis. Moreover, magnetic measurements for compound 1 showed an obvious antiferromagnetic transition at ∼9 K. Our research not only enriches the structural chemistry of the transitional-metal/14/16 chalcogenides but also allows us to better understand the synergic effect of organic amines and surfactants on the crystallization of metal chalcogenides.

  17. 4-twist helix snake to maintain polarization in multi-GeV proton rings

    Science.gov (United States)

    Antoulinakis, F.; Chen, Y.; Dutton, A.; Rossi De La Fuente, E.; Haupert, S.; Ljungman, E. A.; Myers, P. D.; Thompson, J. K.; Tai, A.; Aidala, C. A.; Courant, E. D.; Krisch, A. D.; Leonova, M. A.; Lorenzon, W.; Raymond, R. S.; Sivers, D. W.; Wong, V. K.; Yang, T.; Derbenev, Y. S.; Morozov, V. S.; Kondratenko, A. M.

    2017-09-01

    Solenoid Siberian snakes have successfully maintained polarization in particle rings below 1 GeV, but never in multi-GeV rings, because the spin rotation by a solenoid is inversely proportional to the beam momentum. High energy rings, such as Brookhaven's 255 GeV Relativistic Heavy Ion Collider (RHIC), use only odd multiples of pairs of transverse B-field Siberian snakes directly opposite each other. When it became impractical to use a pair of Siberian Snakes in Fermilab's 120 GeV /c Main Injector, we searched for a new type of single Siberian snake that could overcome all depolarizing resonances in the 8.9 - 120 GeV /c range. We found that a snake made of one 4-twist helix and 2 dipoles could maintain the polarization. This snake design could solve the long-standing problem of significant polarization loss during acceleration of polarized protons from a few GeV to tens of GeV, such as in the AGS, before injecting them into multi-hundred GeV rings, such as RHIC.

  18. 4-twist helix snake to maintain polarization in multi-GeV proton rings

    International Nuclear Information System (INIS)

    Antoulinakis, F.; Chen, Y.; Dutton, A.; Rossi De La Fuente, E.; Haupert, S.

    2017-01-01

    Solenoid Siberian snakes have successfully maintained polarization in particle rings below 1 GeV, but never in multi-GeV rings, because the spin rotation by a solenoid is inversely proportional to the beam momentum. High energy rings, such as Brookhaven’s 255 GeV Relativistic Heavy Ion Collider (RHIC), use only odd multiples of pairs of transverse B-field Siberian snakes directly opposite each other. When it became impractical to use a pair of Siberian Snakes in Fermilab’s 120 GeV/c Main Injector, we searched for a new type of single Siberian snake that could overcome all depolarizing resonances in the 8.9–120 GeV/c range. We found that a snake made of one 4-twist helix and 2 dipoles could maintain the polarization. Here, this snake design could solve the long-standing problem of significant polarization loss during acceleration of polarized protons from a few GeV to tens of GeV, such as in the AGS, before injecting them into multi-hundred GeV rings, such as RHIC.

  19. The hexatron, a six-sided 4-GeV 300-μA CW microtron

    International Nuclear Information System (INIS)

    Colton, E.P.; Crosbie, E.A.; Foss, M.

    1984-01-01

    The use of microtron accelerators to provide intense CW beams of electrons with energies in the 1-5 GeV range is discussed. Principles of operation are reviewed and a design is presented for a six-sided hexagonal microtron, a Hexatron, which is capable of furnishing 300 μA of electrons in 3 extracted beams whose energies can be varied individually from injection energy to 4.0 GeV. Results of prototype studies of the hexatron sector magnets are discussed. Two configurations of beam optics, are shown to provide good beam containment. Options for operating the Hexatron at energies above 4 GeV are also discussed. (author)

  20. Atomic-scale structure of GeSe2 glass revisited: a continuous or broken network of Ge-(Se1/2)4 tetrahedra?

    International Nuclear Information System (INIS)

    Petkov, V; Le Messurier, D

    2010-01-01

    The atomic-scale structure of germanium diselenide (GeSe 2 ) glass has been revisited using a combination of high-energy x-ray diffraction and constrained reverse Monte Carlo simulations. The study shows that the glass structure may be very well described in terms of a continuous network of corner- and edge-sharing Ge-Se 4 tetrahedra. The result is in contrast to other recent studies asserting that the chemical order and, hence, network integrity in GeSe 2 glass are intrinsically broken. It is suggested that more elaborate studies are necessary to resolve the controversy.

  1. Evidence for a narrow peak in $K0_{S}\\pi \\pm \\pi^{+}pi^{-}$ at 2.6 GeV in 12 GeV/c $\\overline{p}$p interactions

    CERN Document Server

    Apostolakis, Alcibiades J; Caso, Carlo; Goldschmidt-Clermont, Yves; Pape, L; Porte, J P; Stergiou, Athanase; Tallini, Bruno; Vasileiadis, G; Wenninger, Horst; Grard, G; Henri, V P; Herquet, P; Kesteman, J; Banerjee, S; Barnham, Keith W J; Beuselinck, R; Butterworth, Ian; Campbell, J Ronald; Chaff, J A; Mermikides, Michael E; Miller, D B; Bertrand, D; Johnson, D; Lemonne, J; Renton, P B; Wickens, J H; Van den Bogaert, F; Daugeras, B Y; Jacholkowska, A

    1977-01-01

    The authors report the evidence for a narrow charged peak (5.5 s.d.), which they suggest calling the I, in the 6-prong-V/sup 0/ topology of pp interactions at 12 GeV/c. The mass, width and the product of cross section sigma /sub I/ times the branching ratio BR into the final state (K/sub s//sup 0/ pi /sup +or-/ pi /sup +/ pi /sup -/) are found to be: M/sub I/=2.60+or-0.01 GeV/c/sup 2/, Gamma /sub I/GeV /c/sup 2/, sigma /sub I/.BR approximately=20 mu barn. (5 refs).

  2. Complex open-framework germanate built by 8-coordinated Ge 10 clusters

    KAUST Repository

    Yue, Huijuan

    2012-11-19

    A novel open-framework germanate |(C 5H 14N 2) 2(C 5H 12N 2) 0.5(H 2O) 2.5|[Ge 12.5O 26(OH) 2] with three-dimensional 10- and 11-ring channels, denoted as SU-67, has been synthesized under hydrothermal conditions using 2-methylpiperazine (MPP) as the structure-directing agent (SDA). The synthesis is intimately related to that of JLG-5, a tubular germanate built from Ge 7 clusters. The influences of synthesis parameters are discussed. A strong influence of the hydrofluoric acid quantity on the resulting cluster building units can be concluded. The framework of SU-67 is based on an elaborate topological pattern of connected Ge 10 clusters forming intersecting 10- and 11-ring channels and has a low framework density (12.4 Ge atoms per 1000 ̊ 3). We have discovered that the topology of SU-67 is a new 8-connected nce-8-I4 1/acd net. Strong hydrogen bonding among the organic SDAs, water molecules, and Ge 10 clusters resulted in helical networks in SU-67. © 2012 American Chemical Society.

  3. Distribution of anthropogenic fill material within the Y-12 plant area, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    Sutton, G.E. Jr.; Field, S.M.

    1995-10-01

    Widespread groundwater contamination in the vicinity of the Oak Ridge Y-12 Plant has been documented through a variety of monitoring efforts since the late 1970s. Various contaminants, most notably volatile organic compounds (VOCs), have migrated through the subsurface and formed extensive contaminant plumes within the Knox Aquifer/Maynardville Limestone, the primary exit pathway for groundwater transport within the Bear Creek Valley. In 1991, an integrated, comprehensive effort (Upper East Fork Poplar Creek [UEFPC] Phase I monitoring network) was initiated in order to (1) identify contaminant source areas within the industrialized portions of the plant and (2) define contamination migration pathways existing between the source areas and the Knox Aquifer/Maynardville Limestone. Data obtained during previous studies have indicated that extensive zones of fill and buried utility trenches may serve as preferred migration pathways. In addition, portions of UEFPC were rerouted, with several of its tributaries being filled during the initial construction of the plant. These filled surface drainage features are also believed to serve as preferred migration pathways. The identification of preferred contaminant migration pathways within the Y-12 Plant area is essential and required to refine the current Bear Creek Valley groundwater conceptual model and to assist in the selection of technically feasible and cost effective remedial strategies. This report presents the results of an initial investigation of the occurrence of manmade (anthropogenic) fill and its effect upon groundwater movement within the plant area. These interpretations are subject to revision and improvement as further investigation of the effects of the fill upon contaminant migration progresses

  4. Observation of e(+)e(-) -> eta ' J/psi center-of-mass energies between 4.189 and 4.600 GeV

    NARCIS (Netherlands)

    Ablikim, M.; Achasov, M. N.; Ahmed, S.; Ai, X. C.; Albayrak, O.; Albrecht, M.; Ambrose, D. J.; Amoroso, A.; An, F. F.; An, Q.; Bai, J. Z.; Ferroli, R. Baldini; Ban, Y.; Bennett, D. W.; Bennett, J. V.; Berger, N.; Bertani, M.; Bettoni, D.; Bian, J. M.; Bianchi, F.; Boger, E.; Boyko, I.; Briere, R. A.; Cai, H.; Cai, X.; Cakir, O.; Calcaterra, A.; Cao, G. F.; Cetin, S. A.; Chang, J. F.; Chelkov, G.; Chen, G.; Chen, H. S.; Chen, H. Y.; Chen, J. C.; Chen, M. L.; Chen, S.; Chen, S. J.; Chen, X.; Chen, X. R.; Chen, Y. B.; Cheng, H. P.; Chu, X. K.; Cibinetto, G.; Dai, H. L.; Dai, J. P.; Dbeyssi, A.; Dedovich, D.; Deng, Z. Y.; Denig, A.; Denysenko, I.; Destefanis, M.; De Mori, F.; Ding, Y.; Dong, C.; Dong, J.; Dong, L. Y.; Dong, M. Y.; Dou, Z. L.; Du, S. X.; Duan, P. F.; Fan, J. Z.; Fang, J.; Fang, S. S.; Fang, X.; Fang, Y.; Farinelli, R.; Fava, L.; Fedorov, O.; Feldbauer, F.; Felici, G.; Feng, C. Q.; Fioravanti, E.; Fritsch, M.; Fu, C. D.; Gao, Q.; Gao, X. L.; Gao, X. Y.; Gao, Y.; Gao, Z.; Garzia, I.; Goetzen, K.; Gong, L.; Gong, W. X.; Gradl, W.; Greco, M.; Gu, M. H.; Gu, Y. T.; Guan, Y. H.; Guo, A. Q.; Guo, L. B.; Guo, R. P.; Guo, Y.; Guo, Y. P.; Haddadi, Z.; Hafner, A.; Han, S.; Hao, X. Q.; Harris, F. A.; He, K. L.; Heinsius, F. H.; Held, T.; Heng, Y. K.; Holtmann, T.; Hou, Z. L.; Hu, C.; Hu, H. M.; Hu, J. F.; Hu, T.; Hu, Y.; Huang, G. S.; Huang, J. S.; Huang, X. T.; Huang, X. Z.; Huang, Y.; Huang, Z. L.; Hussain, T.; Ji, Q.; Ji, Q. P.; Ji, X. B.; Ji, X. L.; Jiang, L. W.; Jiang, X. S.; Jiang, X. Y.; Jiao, J. B.; Jiao, Z.; Jin, D. P.; Jin, S.; Johansson, T.; Julin, A.; Kalantar-Nayestanaki, N.; Kang, X. L.; Kang, X. S.; Kavatsyuk, M.; Ke, B. C.; Kiese, P.; Kliemt, R.; Kloss, B.; Kolcu, O. B.; Kopf, B.; Kornicer, M.; Kupsc, A.; Kuehn, W.; Lange, J. S.; Lara, M.; Larin, P.; Leithoff, H.; Leng, C.; Li, C.; Li, Cheng; Li, D. M.; Li, F.; Li, F. Y.; Li, G.; Li, H. B.; Li, H. J.; Li, J. C.; Li, Jin; Li, K.; Li, K.; Li, Lei; Li, P. R.; Li, Q. Y.; Li, T.; Li, W. D.; Li, W. G.; Li, X. L.; Li, X. N.; Li, X. Q.; Li, Y. B.; Li, Z. B.; Liang, H.; Liang, Y. F.; Liang, Y. T.; Liao, G. R.; Lin, D. X.; Liu, B.; Liu, B. J.; Liu, C. X.; Liu, D.; Liu, F. H.; Liu, Fang; Liu, Feng; Liu, H. B.; Liu, H. H.; Liu, H. H.; Liu, H. M.; Liu, J.; Liu, J. B.; Liu, J. P.; Liu, J. Y.; Liu, K.; Liu, K. Y.; Liu, L. D.; Liu, P. L.; Liu, Q.; Liu, S. B.; Liu, X.; Liu, Y. B.; Liu, Y. Y.; Liu, Z. A.; Liu, Zhiqing; Loehner, H.; Lou, X. C.; Lu, H. J.; Lu, J. G.; Lu, Y.; Lu, Y. P.; Luo, C. L.; Luo, M. X.; Luo, T.; Luo, X. L.; Lyu, X. R.; Ma, F. C.; Ma, H. L.; Ma, L. L.; Ma, M. M.; Ma, Q. M.; Ma, T.; Ma, X. N.; Ma, X. Y.; Ma, Y. M.; Maas, F. E.; Maggiora, M.; Mao, Y. J.; Mao, Z. P.; Marcello, S.; Messchendorp, J. G.; Mezzadri, G.; Min, J.; Mitchell, R. E.; Mo, X. H.; Mo, Y. J.; Morales, C. Morales; Muchnoi, N. Yu.; Muramatsu, H.; Musiol, P.; Nefedov, Y.; Nerling, F.; Nikolaev, I. B.; Ning, Z.; Nisar, S.; Niu, S. L.; Niu, X. Y.; Olsen, S. L.; Ouyang, Q.; Pacetti, S.; Pan, Y.; Patteri, P.; Pelizaeus, M.; Peng, H. P.; Peters, K.; Pettersson, J.; Ping, J. L.; Ping, R. G.; Poling, R.; Prasad, V.; Qi, H. R.; Qi, M.; Qian, S.; Qiao, C. F.; Qin, L. Q.; Qin, N.; Qin, X. S.; Qin, Z. H.; Qiu, J. F.; Rashid, K. H.; Redmer, C. F.; Ripka, M.; Rong, G.; Rosner, Ch.; Ruan, X. D.; Sarantsev, A.; Savrie, M.; Schnier, C.; Schoenning, K.; Schumann, S.; Shan, W.; Shao, M.; Shen, C. P.; Shen, P. X.; Shen, X. Y.; Sheng, H. Y.; Shi, M.; Song, W. M.; Song, X. Y.; Sosio, S.; Spataro, S.; Sun, G. X.; Sun, J. F.; Sun, S. S.; Sun, X. H.; Sun, Y. J.; Sun, Y. Z.; Sun, Z. J.; Sun, Z. T.; Tang, C. J.; Tang, X.; Tapan, I.; Thorndike, E. H.; Tiemens, M.; Uman, I.; Varner, G. S.; Wang, B.; Wang, B. L.; Wang, D.; Wang, D. Y.; Wang, K.; Wang, L. L.; Wang, L. S.; Wang, M.; Wang, P.; Wang, P. L.; Wang, S. G.; Wang, W.; Wang, W. P.; Wang, X. F.; Wang, Y.; Wang, Y. D.; Wang, Y. F.; Wang, Y. Q.; Wang, Z.; Wang, Z. G.; Wang, Z. H.; Wang, Z. Y.; Wang, Z. Y.; Weber, T.; Wei, D. H.; Wei, J. B.; Weidenkaff, P.; Wen, S. P.; Wiedner, U.; Wolke, M.; Wu, L. H.; Wu, L. J.; Wu, Z.; Xia, L.; Xia, L. G.; Xia, Y.; Xiao, D.; Xiao, H.; Xiao, Z. J.; Xie, Y. G.; Xiu, Q. L.; Xu, G. F.; Xu, J. J.; Xu, L.; Xu, Q. J.; Xu, Q. N.; Xu, X. P.; Yan, L.; Yan, W. B.; Yan, W. C.; Yan, Y. H.; Yang, H. J.; Yang, H. X.; Yang, L.; Yang, Y. X.; Ye, M.; Ye, M. H.; Yin, J. H.; Yu, B. X.; Yu, C. X.; Yu, J. S.; Yuan, C. Z.; Yuan, W. L.; Yuan, Y.; Yuncu, A.; Zafar, A. A.; Zallo, A.; Zeng, Y.; Zeng, Z.; Zhang, B. X.; Zhang, B. Y.; Zhang, C.; Zhang, C. C.; Zhang, D. H.; Zhang, H. H.; Zhang, H. Y.; Zhang, J.; Zhang, J. J.; Zhang, J. L.; Zhang, J. Q.; Zhang, J. W.; Zhang, J. Y.; Zhang, J. Z.; Zhang, K.; Zhang, L.; Zhang, S. Q.; Zhang, X. Y.; Zhang, Y.; Zhang, Y. H.; Zhang, Y. N.; Zhang, Y. T.; Zhang, Yu; Zhang, Z. H.; Zhang, Z. P.; Zhang, Z. Y.; Zhao, G.; Zhao, J. W.; Zhao, J. Y.; Zhao, J. Z.; Zhao, Lei; Zhao, Ling; Zhao, M. G.; Zhao, Q.; Zhao, Q. W.; Zhao, S. J.; Zhao, T. C.; Zhao, Y. B.; Zhao, Z. G.; Zhemchugov, A.; Zheng, B.; Zheng, J. P.; Zheng, W. J.; Zheng, Y. H.; Zhong, B.; Zhou, L.; Zhou, X.; Zhou, X. K.; Zhou, X. R.; Zhou, X. Y.; Zhu, K.; Zhu, K. J.; Zhu, S.; Zhu, S. H.; Zhu, X. L.; Zhu, Y. C.; Zhu, Y. S.; Zhu, Z. A.; Zhuang, J.; Zotti, L.; Zou, B. S.; Zou, J. H.

    2016-01-01

    The process e(+)e(-) -> eta' J/psi is observed for the first time with a statistical significance of 8.6 sigma at center-of-mass energy root s = 4.226 GeV and 7.3 sigma at root s = 4.258 GeV using data samples collected with the BESIII detector. The Born cross sections are measured to be (3.7 +/-

  5. The Ag2Se-HgSe-GeSe2 system and crystal structures of the compounds

    International Nuclear Information System (INIS)

    Parasyuk, O.V.; Gulay, L.D.; Romanyuk, Ya.E.; Olekseyuk, I.D.; Piskach, L.V.

    2003-01-01

    The phase diagram of the quasi-ternary Ag 2 Se-HgSe-GeSe 2 system at 298 K was investigated using X-ray phase analysis and metallography. The formation of five intermediate quaternary phases β (Ag ∼7.12-∼6.32 Hg ∼0.44-∼0.82 GeSe 6 ), γ (Ag ∼6.08-∼4.00 Hg ∼0.96-∼2.00 GeSe 6 ), δ (Ag 3.4 Hg 2.3 GeSe 6 ), ε (Ag ∼2.24-∼2.00 Hg ∼2.88-∼3.00 GeSe 6 ) and ∼Ag 1.4 Hg 1.3 GeSe 6 was established. The crystal structure of the β-phase (for the Ag 6.504 Hg 0.912 GeSe 6 composition) was determined using X-ray single crystal diffraction. It crystallizes in a cubic structure (space group F4-bar 3m) with the lattice parameter a=1.09026(4) nm. The crystal structure of the δ-phase (Ag 3.4 Hg 2.3 GeSe 6 ) was determined using X-ray powder diffraction (space group F4-bar 3m, a=1.07767(8) nm). The crystal structure determination of the γ-phase (space group Pmn2 1 ) was performed for the compositions Ag 5.6 Hg 1.2 GeSe 6 , Ag 4.8 Hg 1.6 GeSe 6 and Ag 4 Hg 2 GeSe 6 using X-ray powder diffraction. The crystal structure of the LT-Hg 2 GeSe 4 compound (space group I4-bar , a=0.56786(2), c=1.12579(5) nm) was confirmed by powder diffraction also.

  6. 4-twist helix snake to maintain polarization in multi-GeV proton rings

    Directory of Open Access Journals (Sweden)

    F. Antoulinakis

    2017-09-01

    Full Text Available Solenoid Siberian snakes have successfully maintained polarization in particle rings below 1 GeV, but never in multi-GeV rings, because the spin rotation by a solenoid is inversely proportional to the beam momentum. High energy rings, such as Brookhaven’s 255 GeV Relativistic Heavy Ion Collider (RHIC, use only odd multiples of pairs of transverse B-field Siberian snakes directly opposite each other. When it became impractical to use a pair of Siberian Snakes in Fermilab’s 120  GeV/c Main Injector, we searched for a new type of single Siberian snake that could overcome all depolarizing resonances in the 8.9–120  GeV/c range. We found that a snake made of one 4-twist helix and 2 dipoles could maintain the polarization. This snake design could solve the long-standing problem of significant polarization loss during acceleration of polarized protons from a few GeV to tens of GeV, such as in the AGS, before injecting them into multi-hundred GeV rings, such as RHIC.

  7. Double symmetry breaking in TmFe{sub 4}Ge{sub 2} compared to RFe{sub 4}Ge{sub 2} (R=Y, Lu, Er, Ho, Dy) magnetic behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Schobinger-Papamantellos, P., E-mail: Schobinger@mat.ethz.ch [Laboratory of Crystallography, ETH-Zürich, 8093 Zürich (Switzerland); Buschow, K.H.J. [Van der Waals-Zeeman Institute, University of Amsterdam, NL-1018 XE (Netherlands); Rodríguez-Carvajal, J. [Institut Laue-Langevin, 156X, 38042 Grenoble Cédex (France)

    2014-04-15

    TmFe4Ge{sub 2} undergoes a double magneto-elastic first order transition at T{sub N},T{sub c} where the high temperature (HT) tetragonal phase disproportionate into two distinct orthorhombic low temperature (LT) phases with commensurate and incommensurate magnetic wave vectors respectively: P4{sub 2}/mnm(HT)T{sub N},T{sub c}→Cmmmq{sub 1}=(0,1/2 ,0)+Pnnm(q{sub 2}=(0,q{sub y},0),q{sub y}≈2/11(LT) Neutron diffraction shows the relative portions of the LT Cmmm and Pnnm competing phases change linearly with T. The amount of the majority HT phase Pnnm (54% at 30 K) decreases linearly to 30% down to 10 K in favour of the Cmmm phase that dominates the range 26–1.5 K. The Tm moments point along the c-axis in both phases while the Fe moments have canted arrangements. The μ{sub Tm}=3.54(3) μ{sub B}/atom at 1.5 K is strongly reduced below the Tm{sup 3+} free ion value g{sub J}J=7 μ{sub B} for the q{sub 1} phase. The q{sub 2} phase corresponds to a 3D canted sinusoidal arrangement. The results are summarised on a phase diagram and compared to the findings in RFe{sub 4}Ge{sub 2} (R=Y, Lu, Er, Ho, Dy) that are reviewed. The multitude of transition paths occurring in those systems arise from the competing magnetoelastic mechanisms involving the R-crystal field anisotropy, the exchange interactions R–R, R–Fe, Fe–Fe of the two sublattices and their coupling to the lattice strain. The geometrical frustration emerging from the compact tetrahedral Fe arrangement with antiferromagnetic interactions leads to 2D and 3D canted, incommensurate and non-magnetic states. The Cmmm transition is triggered by dominating R–R and R–Fe interactions becoming stronger at LT while the Pnnm phase is promoted by Fe–Fe and R–Fe interactions that prevail at HT. Included is also the magnetic structure of the ferromagnetic impurity phase Fe{sub 3}Ge. - Highlights: • Magnetic phase diagram of tetragonal TmFe{sub 4}Ge{sub 2} compound studied by neutron diffraction. • Unusual first

  8. Transverse beam containment in the ANL 4-GeV microtron

    International Nuclear Information System (INIS)

    Colton, E.

    1983-01-01

    Optical systems have been designed to contain the electrons during the acceleration from 0.185 to 4.0 GeV. These systems are located in the dispersive straight sections and maintain a matched dispersion-free beam with β* = 15.0 m in the linac centers, and transverse beam waists in the centers of the dispersive straight sections. A thin-lens code has been developed to design the multi-energy system. Three versions of the focussing systems have been evolved: (i) two quadruople triplets for E less than or equal to 1.62 GeV; (ii) a single triplet for 1.655 less than or equal to E 2.215 GeV, and (iii) a pentaquad system for E greater than or equal to 2.250 GeV. For case (i) we step the exit edges for the 60 0 bending magnets so as to simulate a zero degree edge - this reduces vertical defocussing effects to an acceptable value. At the higher energies the exit edge angles are -60 0 . The entrance angles are 15 0 on the linac sides of the dipoles. Energy behavior of the Twiss parameters and quadrupole strengths are presented

  9. Evidence for weakly new hadrons in e+e- collisions above 4 GeV cms

    International Nuclear Information System (INIS)

    Braunschweig, W.; Martyn, H.U.; Sander, H.G.; Schmitz, D.; Sturm, W.; Wallraff, W.; Cords, D.; Felst, R.; Fries, R.; Gadermann, E.

    1976-07-01

    Single electrons produced with hadrons in e + e - collisions at cms energies of 4.0 to 4.2 GeV have been observed at DORIS using the double arm spectrometer DASP. The measured electron spectrum peaks at low momentum and the associated hadron multiplicity is high. These experimental results are consistent with the electromagnetic production and weak decay of a hadron with a new quantum number that is conserved by the strong and electromganetic interaction. The electron yield at 3.7 GeV (the PSI' resonance) and at lower energies was found to be consistent with the estimated background, indicating that the production threshold lies between 3.7 and 4.0 GeV. (orig.) [de

  10. Study of the interaction{pi}{sup +}p at 1.2 GeV/c {pi}{sup +} laboratory momentum; Estudio de la inteeraccion {pi}{sup +} p a 1,2 GeV/c

    Energy Technology Data Exchange (ETDEWEB)

    Ladron de Guevara, P

    1973-07-01

    We present the main results of a 0.33 events/urban experiment of {pi}{sup +} interactions in hydrogen at 1.2 GeV/c, using the 80 cm Saclay bubble chamber. the partial cross sections of the different reactions and the elastic differential cross section are computed by normalizing to the total cross section obtained by other groups. (Author) 34 refs.

  11. Revision of the Ge–Ti phase diagram and structural stability of the new phase Ge{sub 4}Ti{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Bittner, Roland W. [University of Vienna, Department of Inorganic Chemistry/Materials Chemistry, Währingerstraße 42, 1090 Wien (Austria); Colinet, Catherine [Science et Ingénierie des Matériaux et Procédés, Grenoble INP, UJF, CNRS, 38402 Saint Martin d’Hères Cedex (France); Tedenac, Jean-Claude [Institut de Chimie Moléculaire et des Matériaux I.C.G., UMR-CNRS 5253, Université Montpellier II, Place E. Bataillon, 34095 Montpellier Cedex 5 (France); Richter, Klaus W., E-mail: klaus.richter@univie.ac.at [University of Vienna, Department of Inorganic Chemistry/Materials Chemistry, Währingerstraße 42, 1090 Wien (Austria)

    2013-11-15

    Highlights: •New compound Ge{sub 4}Ti{sub 5} found by experiments and by DFT ground state calculations. •Enthalpies of formation calculated for different Ge–Ti compounds. •Modifications of the Ge–Ti phase diagram suggested. -- Abstract: The binary phase diagram Ge–Ti was investigated experimentally by powder X-ray diffraction, scanning electron microscopy including EDX analysis, and differential thermal analysis. Total energies of the compounds GeTi{sub 3}, GeTi{sub 2}, Ge{sub 3}Ti{sub 5}, Ge{sub 4}Ti{sub 5}, Ge{sub 5}Ti{sub 6}, GeTi and Ge{sub 2}Ti were calculated for various structure types employing electronic density-functional theory (DFT). Experimental studies as well as electronic calculations show the existence of a new phase Ge{sub 4}Ti{sub 5} (Ge{sub 4}Sm{sub 5}-type, oP36, Pnma) which is formed in a solid state reaction Ge{sub 3}Ti{sub 5} + Ge{sub 5}Ti{sub 6} = Ge{sub 4}Ti{sub 5}. In addition, a significant homogeneity range was observed for the compound Ge{sub 3}Ti{sub 5} and the composition of the liquid phase in the eutectic reaction L = Ge + Ge{sub 2}Ti was found to be at significant higher Ge-content (97.5 at.% Ge) than reported in previous studies. Based on these new results, a modified phase diagram Ge–Ti is suggested. The zero-temperature lattice parameters and the formation enthalpies determined by DTF calculations were found to be in good agreement with experimental data.

  12. Structural, electronic and optical characteristics of SrGe{sub 2} and BaGe{sub 2}: A combined experimental and computational study

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

    2015-05-05

    Highlights: • Charge transfer between cation and anion atoms observed first time in digermandies. • Study yields a band gap of ∼1 eV and ∼0.85 eV for SrGe{sub 2} and BaGe{sub 2}, respectively. • Band gap decrease with the application of hydrostatic pressure. • Localized cation d states lead to a large absorption coefficient (>7.5 × 10{sup 4} cm{sup −1}). - Abstract: SrGe{sub 2} and BaGe{sub 2} were characterized for structural, electronic and optical properties by means of diffuse reflectance and first-principles density functional theory. These two germanides crystallize in the BaSi{sub 2}-type structure, in which Ge atoms are arranged in tetrahedral configuration. The calculation indicates a charge transfer from Sr (or Ba) atoms to Ge atoms along with the formation of covalent bonds among Ge atoms in Ge tetrahedral. The computational results confirm that these two germanies are Zintl phase described as Sr{sub 2}Ge{sub 4} (or Ba{sub 2}Ge{sub 4}), which are characterized by positively charged [Sr{sub 2} (or Ba{sub 2})]{sup 2.59+} and negatively charged [Ge{sub 4}]{sup 2.59−} units acting as cation and anion, respectively. These compounds are indirect gap semiconductors with band gap estimated to be E{sub g} = 1.02 eV for BaGe{sub 2} and E{sub g} = 0.89 eV for SrGe{sub 2} which are in good agreement with our experimental measured values (E{sub g} = 0.97 eV for BaGe{sub 2} and E{sub g} = 0.82 eV for SrGe{sub 2}). Our calculations demonstrate that the band gaps are narrowed by application of hydrostatic pressure; the pressure coefficients are estimated to be −10.54 for SrGe{sub 2} and −10.06 meV/GPa for BaGe{sub 2}. Optical properties reveal that these compounds have large absorption coefficient (∼7.5 × 10{sup 4} cm{sup −1} at 1.5 eV) and the estimated high frequency (static) dielectric constant are, ε{sub ∞}(ε{sub 0}) ≈ 12.8(20.97) for BaGe{sub 2} and ε{sub ∞}(ε{sub 0}) ≈ 14.27(22.87) for SrGe{sub 2}.

  13. Synthesis and photoluminescence spectroscopy of BaGeF6:Mn4+ red phosphor

    Science.gov (United States)

    Sekiguchi, Daisuke; Adachi, Sadao

    2015-04-01

    We synthesized Mn4+-activated BaGeF6 red phosphor by the chemical reaction method from HF, H2SiF6, BaF2, KMnO4, and GeO2 powder. The structural and optical properties of BaGeF6:Mn4+ were investigated using X-ray diffraction analysis, secondary electron microscopy observation, electron spin resonance measurement, photoluminescence (PL), PL excitation (PLE) and Raman scattering spectroscopies, and luminescence decay time measurement. Temperature dependence of the PL intensity was measured from T = 20 to 500 K and analyzed by taking into consideration the Bose-Einstein phonon occupation number. The PLE spectra measured at T = 20 and 300 K and luminescence decay time at T = 20-460 K were also analyzed based on the Franck-Condon and conventional thermal quenching models, respectively. Comprehensive discussion was given on the Mn4+-related PL properties and Raman scattering behaviors in a family of the barium hexafluorometallate phosphors.

  14. Differential cross sections of proton Compton scattering at photon laboratory energies between 1.2 and 1.7 GeV

    International Nuclear Information System (INIS)

    Duda, J.; Hoefner, F.W.; Jung, M.; Kleissler, R.; Kueck, H.; Leu, P.; Marne, K.D. de; Munk, B.; Vogl, W.; Wedemeyer, R.

    1982-11-01

    Differential cross sections of proton Compton scattering have been measured at the Bonn 2.5 GeV synchrotron. The experiment covers photon laboratory energies between 1.2 GeV and 1.7 GeV and the square of the four-momentum transfer ranges from t = -0.17 GeV 2 to -0.98 GeV 2 corresponding to c.m. scattering angles between 35 0 and 80 0 . The cross sections exhibit a forward peak followed by a monotone fall-off up to the largest measured vertical stroketvertical stroke-values. Fits of the form dsigma/dt = A.exp(Bt) to the data points with vertical stroketvertical stroke 2 yield forward cross sections A, which are consistent with the 0 0 cross sections calculated from the measured total photon-proton cross section. The average slope is B = 5.6 +- 0.14 GeV 2 . (orig.)

  15. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

    2015-09-01

    In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

  16. Results from a hadron jet experiment at √s = 19.4 and 27.4 GeV

    International Nuclear Information System (INIS)

    Arenton, M.W.; Chen, H.F.; Corcoran, M.

    1984-01-01

    In Fermilab experiment E609 we have studied the production of high p/sub t/ hadron jets by beams of protons at 200 and 400 GeV/c and pions at 200 GeV/c. Results for the single-jet and di-jet cross sections are given and are compared to QCD predictions. Leading-particle charge ratios from di-jet events are given and compared to QCD-motivated predictions. Evidence is presented concerning a higher twist effect in πp interactions as predicted by Berger and Brodsky. Preliminary results on high transverse energy events from nuclear targets are given. Finally, we present comparisons of our pp high E/sub t/ data with predictions from two Monte Carlo models. 12 references

  17. Phase relations in the quasi-binary Cu{sub 2}GeS{sub 3}-ZnS and quasi-ternary Cu{sub 2}S-Zn(Cd)S-GeS{sub 2} systems and crystal structure of Cu{sub 2}ZnGeS{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Parasyuk, O.V. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine)]. E-mail: oleg@lab.univer.lutsk.ua; Piskach, L.V. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine); Romanyuk, Y.E. [Advanced Photonics Laboratory, Institute of Imaging and Applied Optics, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Olekseyuk, I.D. [Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk (Ukraine); Zaremba, V.I. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, 6 Kyryla and Mefodiya Str., 79005 L' viv (Ukraine); Pekhnyo, V.I. [V.I. Vernadskii Institute of General and Inorganic Chemistry, Ukrainian National Academy of Sciences, Palladina Ave 32-34, 03680 Kiev (Ukraine)

    2005-07-19

    The isothermal section of the Cu{sub 2}S-Zn(Cd)S-GeS{sub 2} systems at 670K was constructed using X-ray diffraction analysis. At this temperature, two quaternary intermediate phases, Cu{sub 2}CdGeS{sub 4} and {approx}Cu{sub 8}CdGeS{sub 7}, exist in the Cu{sub 2}S-CdS-GeS{sub 2} system, and only one phase, Cu{sub 2}ZnGeS{sub 4}, exists in the Cu{sub 2}S-ZnS-GeS{sub 2} system. The phase diagram of the Cu{sub 2}GeS{sub 3}-ZnS system was constructed using differential-thermal analysis and X-ray diffraction, and the existence of Cu{sub 2}ZnGeS{sub 4} has been confirmed. It forms incongruently at 1359K. Powder X-ray diffraction was used to refine the crystal structure of Cu{sub 2}ZnGeS{sub 4}, which crystallizes in the tetragonal stannite-type structure at 670K (space group I4-bar 2m, a=0.534127(9)nm, c=1.05090(2)nm, R{sub I}=0.0477). The possibility of the formation of quaternary compounds in the quasi-ternary systems A{sup I}{sub 2}X-B{sup II}X-C{sup IV}X{sub 2}, where A{sup I}-Cu, Ag; B{sup II}-Zn, Cd, Hg; C{sup IV}-Si, Ge, Sn and X-S, Se, Te is discussed.

  18. Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

    International Nuclear Information System (INIS)

    Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

    2008-01-01

    Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

  19. Measurement of betatron-tune in the KEK 12 GeV-PS/J-PARC

    International Nuclear Information System (INIS)

    Miura, Takako; Toyama, Takeshi; Igarashi, Susumu; Hayashi, Naoki

    2004-01-01

    Measurement of betatron-tune in the KEK 12 GeV-PS is performed by using band limited white noise which excites coherent betatron oscillations via stripline unit. We compared the results of the measurement for betatron oscillation amplitude with the result of calculation, and confirmed the consistency. The design of the tune-monitor in J-PARC was also discussed applying this result. (author)

  20. Ionic conductivity of sodium–strontium germanate Na{sub 4}SrGe{sub 6}O{sub 15}

    Energy Technology Data Exchange (ETDEWEB)

    Sorokin, N. I., E-mail: nsorokin1@yandex.ru [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation)

    2017-03-15

    The electrical conductivity of sodium–strontium germanate Na{sub 4}SrGe{sub 6}O{sub 15} (sp. gr. P6{sub 3}/m) has been studied by impedance spectroscopy in the frequency range of 10{sup 2}–4 × 10{sup 4} Hz and a temperature range of 450–600 K. Na4SrGe6O15 crystals were obtained by hydrothermal technique in the Na{sub 2}O–SrO–GeO{sub 2}–H{sub 2}O system (temperature t = 300–600°C and pressure p = 1.4 × 10{sup 8} Pа in the dissolution zone). The ionic conductivity of ceramic Na{sub 4}SrGe{sub 6}O{sub 15} samples is σ = 2.2 × 10{sup –6} S/cm (at 573 K), the activation energy of Na{sup +} ion transfer is E{sub a} = 0.70 ± 0.03 eV.

  1. R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd): Crystal structures with nets of Ir atoms

    Energy Technology Data Exchange (ETDEWEB)

    Yarema, Maksym [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Swiss Federal Laboratories for Materials Science and Technology (EMPA), Ueberlandstr. 129, CH-8600 Duebendorf (Switzerland); Zaremba, Oksana; Gladyshevskii, Roman [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya Str, 6, UA-79005 Lviv (Ukraine); Hlukhyy, Viktor, E-mail: viktor.hlukhyy@lrz.tu-muenchen.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F. [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

    2012-12-15

    The crystal structures of the new ternary compounds Sm{sub 4}Ir{sub 13}Ge{sub 9} and LaIr{sub 3}Ge{sub 2} were determined and refined on the basis of single-crystal X-ray diffraction data. They belong to the Ho{sub 4}Ir{sub 13}Ge{sub 9} (oP52, Pmmn) and CeCo{sub 3}B{sub 2} (hP5, P6/mmm) structure types, respectively. The formation of isotypic compounds R{sub 4}Ir{sub 13}Ge{sub 9} with R=La, Ce, Pr, Nd, and RIr{sub 3}Ge{sub 2} with R=Ce, Pr, Nd, was established by powder X-ray diffraction. The RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) compounds exist only in as-cast samples and decompose during annealing at 800 Degree-Sign C with the formation of R{sub 4}Ir{sub 13}Ge{sub 9}. The structure of Sm{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting, slightly puckered nets of Ir atoms (4{sup 4})(4{sup 3}.6){sub 2}(4.6{sup 2}){sub 2} and (4{sup 4}){sub 2}(4{sup 3}.6){sub 4}(4.6{sup 2}){sub 2} that are perpendicular to [0 1 1] as well as to [0 -1 1] and [0 0 1]. The Ir atoms are surrounded by Ge atoms that form tetrahedra or square pyramids (where the layers intersect). The Sm and additional Ir atoms (in trigonal-planar coordination) are situated in channels along [1 0 0] (short translation vector). In the structure of LaIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets (3.6.3.6) perpendicular to [0 0 1]. These nets alternate along the short translation vector with layers of La and Ge atoms. - Graphical abstract: The crystal structures contain the nets of Ir atoms as main structural motif: R{sub 4}Ir{sub 13}Ge{sub 9} contains intersecting slightly puckered nets of Ir atoms, whereas in the structure of RIr{sub 3}Ge{sub 2} the Ir atoms form planar Kagome nets. Highlights: Black-Right-Pointing-Pointer The Ir-rich ternary germanides R{sub 4}Ir{sub 13}Ge{sub 9} (R=La, Ce, Pr, Nd, Sm) and RIr{sub 3}Ge{sub 2} (R=La, Ce, Pr, Nd) have been synthesized. Black-Right-Pointing-Pointer The RIr{sub 3}Ge{sub 2} compounds exist only in as-cast samples and decompose during annealing at 800

  2. Crystal structure of a Zn-doped derivative of the Li17Ge4 compound

    International Nuclear Information System (INIS)

    Lacroix-Orio, L.; Tillard, M.; Belin, C.

    2008-01-01

    The compound Li 17-ε Zn ε Ge 4 has been obtained as a side product during the preparation of the intermetallic compound Li 8 Zn 2 Ge 3 from the elements. Its structure has been determined from single crystal X-ray diffraction intensities measured at 173 K. It crystallizes in the cubic system, F4-bar3m space group, a = 18.842(1) A, Z = 20. Its crystal structure is slightly different from those so far reported in the literature for the Zn-free phase Li 17 Ge 4 , particularly concerned are the positions and the site occupations of Li atoms. Most likely, these structural variations result from the presence of a small Zn concentration in the compound. The Zn doping atom has been found only at the specific Li 4d site (about 3 at.% Zn)

  3. 1-2 GeV synchrotron radiation facility at Lawrence Berkeley Laboratory

    International Nuclear Information System (INIS)

    Berkner, K.H.

    1985-10-01

    The Advanced Light Source (ALS), a dedicated synchrotron radiation facility optimized to generate soft x-ray and vacuum ultraviole (XUV) light using magnetic insertion devices, was proposed by the Lawrence Berkeley Laboratory in 1982. It consists of a 1.3-GeV injection system, an electron storage ring optimized at 1.3 GeV (with the capability of 1.9-GeV operation), and a number of photon beamlines emanating from twelve 6-meter-long straight sections, as shown in Fig. 1. In addition, 24 bending-magnet ports will be avialable for development. The ALS was conceived as a research tool whose range and power would stimulate fundamentally new research in fields from biology to materials science (1-4). The conceptual design and associated cost estimate for the ALS have been completed and reviewed by the US Department of Energy (DOE), but preliminary design activities have not yet begun. The focus in this paper is on the history of the ALS as an example of how a technical construction project was conceived, designed, proposed, and validated within the framwork of a national laboratory funded largely by the DOE

  4. Evidence for a narrow peak in K0sub(s)π+-π+π- at 2.6 GeV in 12 GeV/c anti pp interactions

    International Nuclear Information System (INIS)

    Apostolakis, A.; Casali, R.; Caso, C.; Goldschmidt-Clermont, Y.; Pape, L.; Porte, J.P.; Stergiou, A.; Tallini, B.; Vassiliadis, G.; Wenninger, H.; Grard, G.; Henri, V.P.; Herquet, P.; Kesteman, J.; Banerjee, S.; Barnham, K.W.J.; Beuselinck, R.; Butterworth, I.; Campbell, J.R.; Chaff, J.; Mermikides, M.E.; Miller, D.B.; Bertrand, D.; Johnson, D.; Lemonne, J.; Renton, P.; Wickens, J.; Bogaert, F. van den; Daugeras, B.; Jacholkowska, A.

    1977-01-01

    The evidence is reported for a narrow charged peak (5.5 s.d.), which the authors suggest calling the I, in the 6-prong-V 0 topology of anti pp interactions at 12 GeV/c. The mass, width and the product of cross section sigmasub(I) times the branching ratio BR into the final state (K 0 sub(s)π +- π + π - ) are found to be: Msub(I)=2.60+-0.01 GeV/c 2 , GAMMAsub(I) 2 , sigmasub(I).BR approximately 20 μbarn. (Auth.)

  5. Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

    Energy Technology Data Exchange (ETDEWEB)

    Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

    2015-05-01

    Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

  6. Calculation of radiation loss of 1.2 GeV-electrons in a thick silicon monocrystal

    International Nuclear Information System (INIS)

    Keshtova, S.V.; Komarov, F.F.

    1988-01-01

    The angular distribution of radiation loss of different fractions of 1.2 GeV-electrons during axial channeling in a Si monocrystal of 1.6 mm thickness is discussed. The results of the numerical calculations are compared with the experimental data. (author)

  7. Neutron-capture cross-section measurements of 74Ge and 76Ge in the energy region 0.4-14.8 MeV for neutrinoless double β decay applications

    Science.gov (United States)

    Bhike, Megha; Tornow, Werner

    2013-10-01

    Fast neutron capture cross sections for the reactions 74Ge(n, γ)75Ge and 76Ge(n, γ)77Ge have been measured in the neutron energy region 0.4-14.8 MeV with the activation method. The results are important to identify backgrounds in the neutrinoless double- β decay experiments GERDA and MAJORANA, which use germanium as both source and detector. Isotopically enriched targets which consisted of 86% of 76Ge and 14% of 74Ge were irradiated with mono-energetic neutrons produced via 3H(p,n)3He, 2H(d,n)3He and 3H(d,n)4He reactions. The cross sections were determined relative to 197Au(n, γ)198Au, 115In(n,n')115mIn and 197Au(n,2n)196Au standard cross sections. The activities of the products were measured using high-resolution γ-ray spctroscopy. The present results are compared with the evaluated data from ENDF/B-VII.1 and TALYS.

  8. Magnetic properties of the germanides RE{sub 3}Pt{sub 4}Ge{sub 6} (RE=Y, Pr, Nd, Sm, Gd-Dy)

    Energy Technology Data Exchange (ETDEWEB)

    Eustermann, Fabian; Eilers-Rethwisch, Matthias; Renner, Konstantin; Hoffmann, Rolf-Dieter; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Janka, Oliver [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie; Oldenburg Univ. (Germany). Inst. fuer Chemie

    2017-07-01

    The germanides RE{sub 3}Pt{sub 4}Ge{sub 6} (RE=Y, Pr, Nd, Sm, Gd-Dy) have been synthesized by arc-melting of the elements followed by inductive annealing to improve the crystallinity and allow for structural order. The compounds have been studied by powder X-ray diffraction; additionally the structure of Y{sub 3}Pt{sub 4}Ge{sub 6} has been refined from single-crystal X-ray diffractometer data. It exhibits a (3+1)D modulated structure, indicating isotypism with Ce{sub 3}Pt{sub 4}Ge{sub 6}. The crystal structure can be described as an intergrowth between YIrGe{sub 2}- and CaBe{sub 2}Ge{sub 2}-type slabs along [100]. Temperature-dependent magnetic susceptibility measurements showed Pauli paramagnetism for Y{sub 3}Pt{sub 4}Ge{sub 6} and Curie-Weiss paramagnetism for Pr{sub 3}Pt{sub 4}Ge{sub 6} and Nd{sub 3}Pt{sub 4}Ge{sub 6}. Sm{sub 3}Pt{sub 4}Ge{sub 6} exhibits van Vleck paramagnetism, while antiferromagnetic ordering at T{sub N}=8.1(1) K and T{sub N}=11.0(1) K is observed for Gd{sub 3}Pt{sub 4}Ge{sub 6} and Tb{sub 3}Pt{sub 4}Ge{sub 6}, respectively.

  9. Complex open-framework germanate built by 8-coordinated Ge 10 clusters

    KAUST Repository

    Yue, Huijuan; Peskov, Maxim; Sun, Junliang; Zou, Xiaodong

    2012-01-01

    cluster building units can be concluded. The framework of SU-67 is based on an elaborate topological pattern of connected Ge 10 clusters forming intersecting 10- and 11-ring channels and has a low framework density (12.4 Ge atoms per 1000 ̊ 3). We have

  10. Enhanced stability of magic clusters: A case study of icosahedric Al12X, X=B, Al, Ga, C, Si, Ge, Ti, As

    International Nuclear Information System (INIS)

    Gong, X.G.; Kumar, V.

    1992-10-01

    We present results of the electronic structure and stability of some 40 valence electron icosahedric Al 12 X (X=B, Al, Ga, C, Si, Ge, Ti and As) clusters within the local spin density functional theory. It is shown that the stability of Al 13 cluster can be substantially enhanced by proper doping. For neutral clusters, substitution of C at the center of the icosahedron leads to the largest gain in energy. However, Al 12 B - is the most bounded in this family. These results are in agreement with the recent experiments which also find Al 12 B - to be highly abundant. (author). 12 refs, 4 figs, 2 tabs

  11. Observation of a Neutral Structure near the DD[over ¯]^{*} Mass Threshold in e^{+}e^{-}→(DD[over ¯]^{*})^{0}π^{0} at sqrt[s]=4.226 and 4.257 GeV.

    Science.gov (United States)

    Ablikim, M; Achasov, M N; Ai, X C; Albayrak, O; Albrecht, M; Ambrose, D J; Amoroso, A; An, F F; An, Q; Bai, J Z; Ferroli, R Baldini; Ban, Y; Bennett, D W; Bennett, J V; Bertani, M; Bettoni, D; Bian, J M; Bianchi, F; Boger, E; Boyko, I; Briere, R A; Cai, H; Cai, X; Cakir, O; Calcaterra, A; Cao, G F; Cetin, S A; Chang, J F; Chelkov, G; Chen, G; Chen, H S; Chen, H Y; Chen, J C; Chen, M L; Chen, S Chen; Chen, S J; Chen, X; Chen, X R; Chen, Y B; Cheng, H P; Chu, X K; Cibinetto, G; Dai, H L; Dai, J P; Dbeyssi, A; Dedovich, D; Deng, Z Y; Denig, A; Denysenko, I; Destefanis, M; De Mori, F; Ding, Y; Dong, C; Dong, J; Dong, L Y; Dong, M Y; Du, S X; Duan, P F; Fan, J Z; Fang, J; Fang, S S; Fang, X; Fang, Y; Fava, L; Feldbauer, F; Felici, G; Feng, C Q; Fioravanti, E; Fritsch, M; Fu, C D; Gao, Q; Gao, X L; Gao, X Y; Gao, Y; Gao, Z; Garzia, I; Goetzen, K; Gong, W X; Gradl, W; Greco, M; Gu, M H; Gu, Y T; Guan, Y H; Guo, A Q; Guo, L B; Guo, R P; Guo, Y; Guo, Y P; Haddadi, Z; Hafner, A; Han, S; Hao, X Q; Harris, F A; He, K L; He, X Q; Held, T; Heng, Y K; Hou, Z L; Hu, C; Hu, H M; Hu, J F; Hu, T; Hu, Y; Huang, G M; Huang, G S; Huang, J S; Huang, X T; Huang, Y; Hussain, T; Ji, Q; Ji, Q P; Ji, X B; Ji, X L; Jiang, L W; Jiang, X S; Jiang, X Y; Jiao, J B; Jiao, Z; Jin, D P; Jin, S; Johansson, T; Julin, A; Kalantar-Nayestanaki, N; Kang, X L; Kang, X S; Kavatsyuk, M; Ke, B C; Kiese, P; Kliemt, R; Kloss, B; Kolcu, O B; Kopf, B; Kornicer, M; Kühn, W; Kupsc, A; Lange, J S; Lara, M; Larin, P; Leng, C; Li, C; Li, Cheng; Li, D M; Li, F; Li, F Y; Li, G; Li, H B; Li, H J; Li, J C; Li, Jin; Li, K; Li, K; Li, Lei; Li, P R; Li, T; Li, W D; Li, W G; Li, X L; Li, X M; Li, X N; Li, X Q; Li, Z B; Liang, H; Liang, J J; Liang, Y F; Liang, Y T; Liao, G R; Lin, D X; Liu, B J; Liu, C X; Liu, D; Liu, F H; Liu, Fang; Liu, Feng; Liu, H B; Liu, H H; Liu, H H; Liu, H M; Liu, J; Liu, J B; Liu, J P; Liu, J Y; Liu, K; Liu, K Y; Liu, L D; Liu, P L; Liu, Q; Liu, S B; Liu, X; Liu, Y B; Liu, Z A; Liu, Zhiqing; Loehner, H; Lou, X C; Lu, H J; Lu, J G; Lu, Y; Lu, Y P; Luo, C L; Luo, M X; Luo, T; Luo, X L; Lyu, X R; Ma, F C; Ma, H L; Ma, L L; Ma, M M; Ma, Q M; Ma, T; Ma, X N; Ma, X Y; Maas, F E; Maggiora, M; Mao, Y J; Mao, Z P; Marcello, S; Messchendorp, J G; Min, J; Mitchell, R E; Mo, X H; Mo, Y J; Morales, C Morales; Moriya, K; Muchnoi, N Yu; Muramatsu, H; Nefedov, Y; Nerling, F; Nikolaev, I B; Ning, Z; Nisar, S; Niu, S L; Niu, X Y; Olsen, S L; Ouyang, Q; Pacetti, S; Pan, Y; Patteri, P; Pelizaeus, M; Peng, H P; Peters, K; Pettersson, J; Ping, J L; Ping, R G; Poling, R; Prasad, V; Qi, M; Qian, S; Qiao, C F; Qin, L Q; Qin, N; Qin, X S; Qin, Z H; Qiu, J F; Rashid, K H; Redmer, C F; Ripka, M; Rong, G; Rosner, Ch; Ruan, X D; Sarantsev, A; Savrié, M; Schoenning, K; Schumann, S; Shan, W; Shao, M; Shen, C P; Shen, P X; Shen, X Y; Sheng, H Y; Shi, M; Song, W M; Song, X Y; Sosio, S; Spataro, S; Sun, G X; Sun, J F; Sun, S S; Sun, X H; Sun, Y J; Sun, Y Z; Sun, Z J; Sun, Z T; Tang, C J; Tang, X; Tapan, I; Thorndike, E H; Tiemens, M; Ullrich, M; Uman, I; Varner, G S; Wang, B; Wang, D; Wang, D Y; Wang, K; Wang, L L; Wang, L S; Wang, M; Wang, P; Wang, P L; Wang, S G; Wang, W; Wang, W P; Wang, X F; Wang, Y D; Wang, Y F; Wang, Y Q; Wang, Z; Wang, Z G; Wang, Z H; Wang, Z Y; Wang, Z Y; Weber, T; Wei, D H; Wei, J B; Weidenkaff, P; Wen, S P; Wiedner, U; Wolke, M; Wu, L H; Wu, L J; Wu, Z; Xia, L; Xia, L G; Xia, Y; Xiao, D; Xiao, H; Xiao, Z J; Xie, Y G; Xiu, Q L; Xu, G F; Xu, J J; Xu, L; Xu, Q J; Xu, X P; Yan, L; Yan, W B; Yan, W C; Yan, Y H; Yang, H J; Yang, H X; Yang, L; Yang, Y; Yang, Y X; Ye, M; Ye, M H; Yin, J H; Yu, B X; Yu, C X; Yu, J S; Yuan, C Z; Yuan, W L; Yuan, Y; Yuncu, A; Zafar, A A; Zallo, A; Zeng, Y; Zeng, Z; Zhang, B X; Zhang, B Y; Zhang, C; Zhang, C C; Zhang, D H; Zhang, H H; Zhang, H Y; Zhang, J; Zhang, J J; Zhang, J L; Zhang, J Q; Zhang, J W; Zhang, J Y; Zhang, J Z; Zhang, K; Zhang, L; Zhang, X Y; Zhang, Y; Zhang, Y N; Zhang, Y H; Zhang, Y T; Zhang, Yu; Zhang, Z H; Zhang, Z P; Zhang, Z Y; Zhao, G; Zhao, J W; Zhao, J Y; Zhao, J Z; Zhao, Lei; Zhao, Ling; Zhao, M G; Zhao, Q; Zhao, Q W; Zhao, S J; Zhao, T C; Zhao, Y B; Zhao, Z G; Zhemchugov, A; Zheng, B; Zheng, J P; Zheng, W J; Zheng, Y H; Zhong, B; Zhou, L; Zhou, X; Zhou, X K; Zhou, X R; Zhou, X Y; Zhu, K; Zhu, K J; Zhu, S; Zhu, S H; Zhu, X L; Zhu, Y C; Zhu, Y S; Zhu, Z A; Zhuang, J; Zotti, L; Zou, B S; Zou, J H

    2015-11-27

    A neutral structure in the DD[over ¯]^{*} system around the DD[over ¯]^{*} mass threshold is observed with a statistical significance greater than 10σ in the processes e^{+}e^{-}→D^{+}D^{*-}π^{0}+c.c. and e^{+}e^{-}→D^{0}D[over ¯]^{*0}π^{0}+c.c. at sqrt[s]=4.226 and 4.257 GeV in the BESIII experiment. The structure is denoted as Z_{c}(3885)^{0}. Assuming the presence of a resonance, its pole mass and width are determined to be [3885.7_{-5.7}^{+4.3}(stat)±8.4(syst)]  MeV/c^{2} and [35_{-12}^{+11}(stat)±15(syst)]  MeV, respectively. The Born cross sections are measured to be σ[e^{+}e^{-}→Z_{c}(3885)^{0}π^{0},Z_{c}(3885)^{0}→DD[over ¯]^{*}]=[77±13(stat)±17(syst)]  pb at 4.226 GeV and [47±9(stat)±10(syst)]  pb at 4.257 GeV. The ratio of decay rates B[Z_{c}(3885)^{0}→D^{+}D^{*-}+c.c.]/B[Z_{c}(3885)^{0}→D^{0}D[over ¯]^{*0}+c.c.] is determined to be 0.96±0.18(stat)±0.12(syst), consistent with no isospin violation in the process, Z_{c}(3885)^{0}→DD[over ¯]^{*}.

  12. Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

    International Nuclear Information System (INIS)

    Kutsenok, N.L.; Yanson, T.I.

    1987-01-01

    X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

  13. Secondary particle multiplicity depending on the collisions of π--mesons with 12C nucleons at p=40 GeV/c

    International Nuclear Information System (INIS)

    Angelov, N.S.; Grishin, V.G.; Nad', Yu.; Kanarek, T.; Batskovich, S.

    1978-01-01

    The multiplicities of secondary charged particles in π -12 C-interactions with ν-protons of carbon nucleus at p=40 GeV/c (ν=1-5) is presented. It is shown that the dependence of the average values of particle multiplicities on ν approximately equals the dependence on initial pion energy in π - p-interactions in the range from 40 to 200 GeV. KNO scaling and the Wroblewski empirical law for interactions with several nucleons of 12 C nucleus are observed

  14. Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

    Energy Technology Data Exchange (ETDEWEB)

    Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

    2014-10-15

    We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.

  15. Tšaikovski, P. La Fille des neiges (musique de scene op. 12) / Serge Martin

    Index Scriptorium Estoniae

    Martin, Serge

    1995-01-01

    Uuest heliplaadist "Tšaikovski, P. La Fille des neiges (musique de scene op. 12). University Musical Society Choral Union. Detroit Symphony Orchestra, Neeme Järvi. Chandos CHAN 9324, distribution Media 7 (CD: 157 F). 1994. TT: 1h 19'04"

  16. The Effect of Ge Content on the Optical and Electrical Properties of A-Sige: H Thin Films

    Directory of Open Access Journals (Sweden)

    Mursal Mursal

    2014-07-01

    Full Text Available The effect of Ge content on the optical and electrical properties of a-SiGe:H thin films deposited by HWC-PECVD had been investigated. The a-SiGe:H films ware grown on corning glass 7059 substrate using 10% diluted mixture of GeH4 and SiH4 gases, respectively. The GeH4 gas flow rate was varied from 2.5 – 12.5 sccm, while the flow rate of SiH4 was kept constant at 70 sccm. The results showed that the deposition rate of a-SiGe:H thin films increased by  increasing of GeH4 gas flow rate. In addition, the Ge content in the film increased and  the optical band gap decreased. The dark conductivity of a-SiGe:H films were relatively constant, whereas the photo conductivity decreased with increasing of Ge content.

  17. Magnetic properties of PrMn2-xFexGe2-57Fe Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Wang, J L; Campbell, S J; Cadogan, J M; Tegus, O; Studer, A J; Hofmann, M

    2006-01-01

    We have investigated the magnetic behaviour of PrMn 2-x Fe x Ge 2 compounds with x = 0.4, 0.6 and 0.8 over the temperature range 4.2-350 K using ac magnetic susceptibility, dc magnetization and 57 Fe Moessbauer effect spectroscopy, as well as neutron diffraction for the PrMn 1.2 Fe 0.8 Ge 2 compound. Replacement of Mn with Fe leads to contraction of the unit cell and a shortening of the Mn-Mn spacing, resulting in modification of the magnetic structure. PrMn 1.6 Fe 0.4 Ge 2 is an intralayer antiferromagnet at room temperature and ferromagnetic below T C inter ∼230 K with additional ferromagnetic ordering of the Pr sublattice detected below T C Pr ∼30 K. Re-entrant ferromagnetism has been observed in PrMn 1.4 Fe 0.6 Ge 2 with four magnetic transitions (T N intra ∼333 K, T C inter ∼168 K, T N inter ∼152 K and T C Pr ∼40 K). Moreover, it was found that T C inter and T C Pr increase with applied field while T N inter decreases. PrMn 1.2 Fe 0.8 Ge 2 is antiferromagnetic with T N intra ∼242 K and T N inter ∼154 K. The magnetic transition temperatures for all compounds are also marked by changes in the 57 Fe magnetic hyperfine field and the electric quadrupole interaction parameters. The 57 Fe transferred hyperfine field at 4.5 K in PrMn 1.6 Fe 0.4 Ge 2 and PrMn 1.4 Fe 0.6 Ge 2 is reduced (below the ordering temperature of the Pr sublattice) compared with that at 80 K (above T C Pr ), indicating that the transferred hyperfine field from Pr acts in the opposite direction to that from the Mn atoms. The neutron data for PrMn 1.2 Fe 0.8 Ge 2 demonstrate that an anisotropic thermal expansion occurs within the interplanar antiferromagnetic range

  18. Experimental and Theoretical Equation of State of GeO2 to 1.2 Mbars

    Science.gov (United States)

    Dutta, R.; White, C.; Greenberg, E.; Prakapenka, V. B.; Duffy, T. S.

    2017-12-01

    Germanium dioxide, GeO2, has been used widely as an analog in structural studies of crystalline, amorphous, and liquid SiO2 at high pressures (Micoulaut et al. 2006). Crystalline GeO2 follows a similar sequence of phase transitions as crystalline SiO2 but at substantially lower pressures making it useful as an analog for the behavior of silica in deep interiors of terrestrial and extra-solar planets. However, much of the existing work on GeO2 is fragmentary, and there is limited experimental data above 50 GPa. In this study, we report detailed equation of state (EOS) data for four phases (rutile, CaCl2, α-PbO2 and pyrite-type) of GeO2 using both laser-heated diamond anvil cell experiments and theoretical density functional theory (DFT) calculations. Experiments were conducted at sector 13 of the Advanced Photon Source. The rutile phase was synthesized from α-quartz starting material by laser heating at 4.7 GPa. The pressure-volume data for this phase can be fit using a 3rd order Birch-Murnaghan equation of state (EOS) with V0 = 55.33 Å3 (fixed), K0 = 225(10) GPa, K0' = 5(1), where V0, K0, K0' are the zero-pressure volume, bulk modulus and its pressure derivative respectively. In a separate run, the CaCl2-type phase was synthesized at 35.9 GPa and the sample remained in this structure up to 68.3 GPa. The EOS parameters in this case are V0 = 55.9 (1) Å3, K0 = 238 (4) GPa and K0' = 4 (fixed). The α-PbO2-type phase was examined between 51 and 90 GPa, yielding the following EOS parameters: V0 = 107.6 (2) Å3, K0 = 291 (5) GPa and K0' = 4 (fixed). The pyrite-type phase was then synthesized and examined up to the peak pressure of 119.5 GPa. The best fit to the data is obtained using V0 = 100.7 (1) Å3, K0 = 339 (4) GPa and K0' = 4 (fixed). These values will be compared with the results of theoretical calculations using different exchange correlation functionals. Our results will also be compared with shock wave data for GeO2 to better understand the behavior of this

  19. A novel red phosphor Mg2GeO4 doped with Eu3+ for PDP applications

    International Nuclear Information System (INIS)

    Yang Hongmei; Shi Jianxin; Liang Hongbin; Gong Menglian

    2006-01-01

    A novel red emitting phosphor, Eu 3+ -doped Mg 2 GeO 4 , was prepared by the solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed the formation of Mg 2 GeO 4 :Eu 3+ . Field-emission-scanning electron microscopy (FE-SEM) observation indicated a narrow size-distribution of about 0.5-2 μm nm for the particles with spindle-like shape. Photoluminescence (PL) and vacuum ultraviolet (VUV) excitation characteristics of the phosphor Mg 2 GeO 4 :Eu 3+ were studied. We have also studied the effect of preparation conditions such as temperature, heating time on the PL data. Photoluminescence measurements indicated that the phosphor exhibits bright red emission at about 609 nm under UV excitation. And the vacuum ultraviolet spectra present that the novel red phosphor Mg 2 GeO 4 :Eu 3+ shows strong absorption in the VUV region, which ensures the efficient absorption of the Xe plasma emission lines. The phosphor Mg 2 GeO 4 :Eu 3+ shows the strongest emission at 613 nm corresponding to the electric dipole 5 D - 7 F 2 transition of Eu 3+ excited at 147 nm. The optical properties study suggests that it is a potential candidate for plasma display panels (PDPs) application

  20. Production of Λ(1405) in K-p reactions at 4.2 GeV/c

    International Nuclear Information System (INIS)

    Hemingway, R.J.

    1985-01-01

    From a 130 event/μb exposure of the CERN 2 m hydrogen bubble chamber to a 4.2 GeV/c K - beam, a high statistics sample of Λ(1405) in a production reaction has been isolated. The reaction K - p -> Σ + (1660)π - , Σ + (1660) -> Λ(1405)π + , Λ(1405) -> Σπ has enabled an almost pure selection of Λ(1405) events. A Byers-Fenster spin-parity analysis is in agreement with the J=1/2 assignment but gives no parity discrimination. The measured line-shape of the Λ(1405) is particularly useful in allowing a better understanding of the nature of this resonance. (orig.)

  1. Antiferromagnetism in EuPdGe{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Albedah, Mohammed A. [Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Al-Qadi, Khalid [Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Department of Mathematics, Statistics and Physics, Qatar University, P.O. Box 2713, Doha (Qatar); Stadnik, Zbigniew M., E-mail: stadnik@uottawa.ca [Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Przewoźnik, Janusz [Solid State Physics Department, Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, 30-059 Kraków (Poland)

    2014-11-15

    Highlights: • We show that EuPdGe{sub 3} crystallizes in the BaNiSn{sub 3}-type structure with the lattice constants a = 4.4457(1) Å and c = 10.1703(2). • We demonstrate that EuPdGe{sub 3} is an antiferromagnet with the Néel temperature T{sub N} = 12.16(1) K. • The temperature dependence of the hyperfine magnetic field follows a S = 7/2 Brillouin function. • We find that the Debye temperature of the studied compound is 199(2) K. - Abstract: The results of X-ray diffraction, magnetic susceptibility and magnetization, and {sup 151}Eu Mössbauer spectroscopy measurements of polycrystalline EuPdGe{sub 3} are reported. EuPdGe{sub 3} crystallizes in the BaNiSn{sub 3}-type tetragonal structure (space group I4mm) with the lattice constants a=4.4457(1)Å and c=10.1703(2)Å. The results are consistent with EuPdGe{sub 3} being an antiferromagnet with the Néel temperature T{sub N}=12.16(1)K and with the Eu spins S=7/2 in the ab plane. The temperature dependence of the magnetic susceptibility above T{sub N} follows the modified Curie-Weiss law with the effective magnetic moment of 7.82(1) μ{sub B} per Eu atom and the paramagnetic Curie temperature of -5.3(1)K indicative of dominant antiferromagnetic interactions. The M(H) isotherms for temperatures approaching T{sub N} from above are indicative of dynamical short-range antiferromagnetic ordering in the sample. The temperature dependence of the hyperfine magnetic field follows a S=7/2 Brillouin function. The principal component of the electric field gradient tensor is shown to increase with decreasing temperature and is well described by a T{sup 3/2} power-law relation. The Debye temperature of EuPdGe{sub 3} determined from the Mössbauer data is 199(2) K.

  2. Photoemission study of the skutterudite compounds CoSb sub 3 and RhSb sub 3

    CERN Document Server

    Ishii, H; Fujimori, A; Nagamoto, Y; Koyanagi, T; Sofo, J O

    2002-01-01

    We have studied the electronic structure of the skutterudite compounds CoSb sub 3 and Co(Sb sub 0 sub . sub 9 sub 6 Te sub 0 sub . sub 0 sub 4) sub 3 by photoemission spectroscopy. Valence-band spectra revealed that a significant amount Sb 5p states are present near the Fermi level and are hybridized with Co 3d states just below it. The spectra are well reproduced by the band-structure calculation, suggesting that the effect of electron correlations is not important. When Te is substituted for Sb and n-type carriers are doped into CoSb sub 3 , the spectra are shifted to higher binding energies as described by the rigid-band model. From this shift and the free-electron model for the conduction and valence bands, we have estimated the band gap of CoSb sub 3 to be 0.03-0.04 eV, consistent with transport measurements. Photoemission spectra of RhSb sub 3 have also been measured and revealed expected similarities to and differences from those of CoSb sub 3. Unusual temperature dependence has been observed for the s...

  3. Inclusive neutral particle production in anti pp interactions at 22.4 GeV/c

    International Nuclear Information System (INIS)

    Boos, E.G.; Samojlov, V.V.; Takibaev, Zh.S.

    1978-01-01

    The differential distributions over longitudinal and transvers Feynman variables for inclusive γ, Ksub(s)sup(0), Λ production in anti pp interactions at 22.4 GeV/c are presented. The rapidity distributions in the c.m.s. for γ and K 0 /K 0 particles are well described by the quark-antiquark fusion model. In the central region there is some evidence for scaling behaviour of the invariant differential cross sections F for the anti pp → γ+all in the range from 22.4 GeV/c to 100 GeV/c while for the K 0 / K 0 tilde production Frises in this energy interval. A non-zero Λ polarization of -0.414+-0.206 was measured

  4. Electronic excitation to low-lying states of GeF4 molecule by electron impact: A comparative study with CF4 and SiF4 molecules

    International Nuclear Information System (INIS)

    Ohtomi, S; Matsui, M; Mochizuki, Y; Suga, A; Kato, H; Hoshino, M; Tanaka, H; Duflot, D; Limão-Vieira, P

    2015-01-01

    We report on the measurements of the electron impact electronic excitation cross sections for XF 4 (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF 4 molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range. (paper)

  5. Facile synthesis and enhanced visible-light photocatalytic activity of micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jin [School of Resources and Environmental Engineering, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China); The Key Laboratory of Rare Earth Functional Materials and Applications, Zhoukou Normal University, Zhoukou 466001 (China); Zhang, Gaoke, E-mail: gkzhang@whut.edu.cn [School of Resources and Environmental Engineering, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070 (China)

    2015-03-15

    Graphical abstract: - Highlights: • Micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres were synthesized by a facile method. • The formation mechanism for the Ag{sub 2}ZnGeO{sub 4} hollow spheres was investigated. • The catalyst exhibited an enhanced visible-light photocatalytic activity. • The reactive species in the photocatalytic process were studied. - Abstract: Micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres were successfully synthesized by a one-step and low-temperature route under ambient pressure. The micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres have a diameter of 1–2 μm and their shells are composed of numerous nanoparticles and nanorods. The growth process of the micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres was investigated in detail. The results indicated that the morphologies and composition of Ag{sub 2}ZnGeO{sub 4} samples were strongly dependent on the dose of the AgNO{sub 3} and reaction time. Excessive AgNO{sub 3} was favorable for the nucleation and growth rate of Ag{sub 2}ZnGeO{sub 4} crystals and the formation of pure Ag{sub 2}ZnGeO{sub 4}. Moreover, the formation mechanism of the micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres is related to the Ostwald ripening. Under the same conditions, the photocatalytic activity of micro/nanostructured Ag{sub 2}ZnGeO{sub 4} hollow spheres is about 1.7 times and 11 times higher than that of bulk Ag{sub 2}ZnGeO{sub 4} and Degussa P25, respectively. These interesting findings could provide new insight on the synthesis of micro/nanostructured ternary-metal oxides with enhanced photocatalytic activity.

  6. Les mobiles de participation des filles au football et autonomisation ...

    African Journals Online (AJOL)

    Cette étude vise à connaître les mobiles qui conditionnent les filles béninoises à pratiquer le football et à les analyser pour développer l'autonomisation des filles en rapport avec les défis du millénaire. Pour ce faire 108 joueuses, dont la moyenne d'âge est de 17 ans, réparties dans 9 équipes parmi les 17 équipes que ...

  7. Experimental result on the π0π0 system produced in the π+p→π+pπ0π0 reaction at 3.5 GeV/c

    International Nuclear Information System (INIS)

    Grivaz, J.F.

    1975-06-01

    The reaction π + p→π + p π 0 π 0 was investigated at 3.5 GeV/c beam momentum, in the CERN 1.2m heavy liquid bubble chamber, filled with a C 3 H 8 -CF 3 Bsub(r) mixture. 800 K pictures were analyzed and events with outgoing proton momentum + momentum + p) mass greater than 1.12 GeV and smaller than 1.36 GeV and momentum transfer to the (π + p) system smaller than .3 (GeV/c) 2 in absolute value. The π + π - →π 0 π 0 reaction cross section is then deduced from the remaining sample (125 events) and compared with theoretical predictions. Good agreement is found for (π 0 π 0 ) masses larger than approximately 600 MeV, whereas the behavior of the cross section near threshold suggests a value of the S-wave I-spin 0 scattering length larger than usually expected [fr

  8. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

    International Nuclear Information System (INIS)

    Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

    2007-01-01

    The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

  9. Ca{sub 2−x}Li{sub 2x}GeO{sub 4} solid solutions. Chemical composition range and flux crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, V.A. [N.I. Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950 (Russian Federation); Marychev, M.O., E-mail: marychev@yandex.ru [N.I. Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950 (Russian Federation); Andreev, P.V.; Lykov, V.A.; Faddeev, M.A. [N.I. Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950 (Russian Federation); Koseva, I. [Bulgarian Academy of Science, Institute of General and Inorganic Chemistry, BU-1113 Sofia (Bulgaria); Nikolov, V. [N.I. Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod, 603950 (Russian Federation)

    2015-11-01

    A series of Ca{sub 2−x}Li{sub 2x}GeO{sub 4} specimens with 0 < 2x < 2, were synthesized by the classical solid state method. X-ray analysis revealed that for 0 < 2x < 0.6 only Ca{sub 2−x}Li{sub 2x}GeO{sub 4} solid solutions of Ca{sub 2}GeO{sub 4} structure crystallized. The cell parameters of these solid solutions linearly decreased upon increasing the lithium concentration, which means that the solutions are in accordance with the Vegard's law. For 2x > 0.6 the specimens contained two phases: (i) Ca{sub 2−x}Li{sub 2x}GeO{sub 4} solid solutions with maximum lithium concentration approximately equal to that for 2x = 0.6 and minimum values of the cell parameters and (ii) Li{sub 2}CaGeO{sub 4} phase. Li{sub 2}O·MoO{sub 3}–Ca{sub 2}GeO{sub 4} high-temperature solutions were used to grow Ca{sub 2−x}Li{sub 2x}GeO{sub 4} solid solutions and Li{sub 2}CaGeO{sub 4} single crystals by the high temperature solution (flux) method. Li{sub 2}CaGeO{sub 4} crystals were grown in the concentration range 8–26 wt. % Ca{sub 2}GeO{sub 4} in the temperature range 830–980 °C. Crystals with chemical compositions of the Ca{sub 2−x}Li{sub 2x}GeO{sub 4} solid solutions with different Li concentrations were grown in the concentration range 26–40 wt. % Ca{sub 2}GeO{sub 4} in the temperature range 980–1090 °C. - Highlights: • Ca{sub 2−x}Li{sub 2x}GeO{sub 4} solid solutions are established for the first time. • The Li concentration range into the solutions is between 0 and 0.6. • The solid solutions are in accordance to Vegard's law. • Suitable solutions are found out for Ca{sub 2−x}Li{sub 2x}GeO{sub 4} and Li{sub 2}CaGeO{sub 4} crystal growth.

  10. Cosmological perturbation theory for baryons and dark matter I. One-loop corrections in the RPT framework

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, Gabor [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany); Zurich Univ. (Switzerland). Inst. for Theoretical Physics; Smith, Robert E. [Zurich Univ. (Switzerland). Inst. for Theoretical Physics

    2009-10-15

    We generalize the ''renormalized'' perturbation theory (RPT) formalism of M. Crocce and R. Scoccimarro (2006) to deal with multiple fluids in the Universe and here we present the complete calculations up to the one-loop level in the RPT. We apply this approach to the problem of following the nonlinear evolution of baryon and cold dark matter (CDM) perturbations, evolving from the distinct sets of initial conditions, from the high redshift post-recombination Universe right through to the present day. In current theoretical and numerical models of structure formation, it is standard practice to treat baryons and CDM as an effective single matter fluid - the so called dark matter only modeling. In this approximation, one uses a weighed sum of late time baryon and CDM transfer functions to set initial mass fluctuations. In this paper we explore whether this approach can be employed for high precision modeling of structure formation. We show that, even if we only follow the linear evolution, there is a large-scale scale-dependent bias between baryons and CDM for the currently favored WMAP5 {lambda}CDM model. This time evolving bias is significant (> 1%) until the present day, when it is driven towards unity through gravitational relaxation processes. Using the RPT formalism we test this approximation in the non-linear regime. We show that the non-linear CDM power spectrum in the 2-component fluid differs from that obtained from an effective mean-mass 1-component fluid by {proportional_to} 3% on scales of order k {proportional_to} 0.05 h Mpc{sup -1} at z = 10, and by {proportional_to} 0.5% at z = 0. However, for the case of the non-linear evolution of the baryons the situation is worse and we find that the power spectrum is suppressed, relative to the total matter, by {proportional_to} 15% on scales k {proportional_to} 0.05 hMpc{sup -1} at z = 10, and by {proportional_to} 3 - 5% at z = 0. Importantly, besides the suppression of the spectrum, the

  11. Tensor analysing power T{sub 2}0 in inelastic (d, d`) X scattering at 0{sup 0} on {sup 1}H and {sup 12}C from 4.5 to 9.0 GeV/c

    Energy Technology Data Exchange (ETDEWEB)

    Azhgirej, L S; Chernykh, E V [Laboratory of High Energies, Joint Institute for Nuclear Research, Dubna (Russian Federation); Kobushkin, A P [Institute of Theoretical Physics, Ukrainian Academy of Sciences, Kiev (Ukraine); and others

    1998-12-01

    Tensor analysing power T{sub 20} for inelastic (d, d`) X reaction at deuteron momentum from 4.2 to 9 GeV/c is presented. It is observed that T{sub 20} taken as a function of the four-momentum transfer squared t demonstrates an approximate scaling; its absolute value is small at |t| <{approx_equal} (0.05 - 0.1) GeV{sup 2}/c{sup 2} and has a maximum at -t {approx_equal}0.3 GeV{sup 2}/c{sup 2}. No significant dependence on the type of the target was observed 10 refs., 4 figs., 4 tabs.

  12. Design and Manufacture of the Conduction Cooled Torus Coils for The Jefferson Laboratory 12-GeV Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Wiseman, M. [Jefferson Lab; Elementi, L. [Fermilab; Elouadhiri, L. [Jefferson Lab; Gabrielli, G. [Fermilab; Gardner, T. J. [Fermilab; Ghoshal, P. K. [Jefferson Lab; Kashy, D. [Jefferson Lab; Kiemschies, O. [Fermilab; Krave, S. [Fermilab; Makarov, A. [Fermilab; Robotham, B. [Fermilab; Szal, J. [Fermilab; Velev, G. [Fermilab

    2015-01-01

    The design of the 12-GeV torus required the construction of six superconducting coils with a unique geometry required for the experimental needs of Jefferson Laboratory Hall B. Each of these coils consists of 234 turns of copper-stabilized superconducting cable conduction cooled by 4.6 K helium gas. The finished coils are each roughly 2 × 4 × 0.05 m and supported in an aluminum coil case. Because of its geometry, new tooling and manufacturing methods had to be developed for each stage of construction. The tooling was designed and developed while producing a practice coil at Fermi National Laboratory. This paper describes the tooling and manufacturing techniques required to produce the six production coils and two spare coils required by the project. Project status and future plans are also presented.

  13. Deuteron electrofission in forward direction at a four-momentum transfer of Q2=0.12 (GeV/c)2

    International Nuclear Information System (INIS)

    Boden, B.

    1990-12-01

    The deuteron electrodisintegration has been performed as the first experiment at the new Bonn 3.5 GeV high duty-cycle electron accelerator ELSA (Electron Stretcher and Accelerator). The cross section was measured in the region of the Δ(1232) resonance excitation at four-momentum-transfer of Q 2 = 0.12 (GeV/c) 2 . An enhancement of the cross section has been observed at the mass of the NΔ system(W = 2.19 GeV) at each of the three hadron spectrometer angles Θ p LAB = 44 0 , 56 0 , 68 0 ) which were set. The results are compared with theoretical calculations. (orig.) [de

  14. Software Tools for Emittance Measurement and Matching for 12 GeV CEBAF

    Energy Technology Data Exchange (ETDEWEB)

    Turner, Dennis L. [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2016-05-01

    This paper discusses model-driven setup of the Continuous Electron Beam Accelerator Facility (CEBAF) for the 12GeV era, focusing on qsUtility. qsUtility is a set of software tools created to perform emittance measurements, analyze those measurements, and compute optics corrections based upon the measurements.qsUtility was developed as a toolset to facilitate reducing machine configuration time and reproducibility by way of an accurate accelerator model, and to provide Operations staff with tools to measure and correct machine optics with little or no assistance from optics experts.

  15. Study of thermal properties and the effect of carrier concentration in the ternary compound Ag6Ge10P12

    International Nuclear Information System (INIS)

    Ahmad, K.A.

    1990-01-01

    In this work the thermal properties of the ternary semiconducting compounds (Ag6Ge10P12) have been investigated. Single crystal samples prepared by Bridgman technique low temperature cryostat are illustrated which is suitable to control temperature from liquid nitrogen up to room temperature. The work contains theoretical and experimental study on binary and ternary semiconductors. Also it illustrates the experimental results of thermoelectric properties of AG6Ge10P12 samples as well as the calculated effective mass, Fermi energy and their analysis throughout the temperature range between 80-300 K. 3 tabs.; 18 figs.; 57 refs

  16. Photoproduction of eta mesons from threshold to 1.2 GeV

    International Nuclear Information System (INIS)

    Rigney, A.; Breuer, M.; Hoffman-Rothe, P.; Anton, G.; Arends, J.; Berrier-Ronsin, G.; Beulertz, W.; Blanpied, G.; Bock, A.; Bruns, M.; Didelez, J.; Djaladi, C.; Edel, G.; Frascaria, R.; Maass, R.; Helbing, K.; Hey, J.; Noeldeke, G.; Hourani, E.; Mayers, M.; Preedom, B.; Ritchie, B.; Rosier, L.; Saghai, B.; Schumacher, M.; Smend, F.; Whisnant, S.

    1995-01-01

    We have measured total and differential cross sections for η-meson photo-production on 7 cm thick 1 H, 2 D, and 14 N liquid targets from threshold to 1.2 GeV, using the tagged Bremsstrahlung photon beam produced by the electrons extracted from the ELSA storage ring at Bonn. The photoreaction was identified by detecting the η decay products in the neutral meson spectrometer SPES0-2π, while the recoil baryons (proton, neutron, or deuteron) were detected by a variety of large angle scintillator detectors. Some of our recent preliminary results, both theoretical and experimental, will be discussed. copyright 1995 American Institute of Physics

  17. Confirmation of the observation of 2νββ decay of 76Ge

    International Nuclear Information System (INIS)

    Avignone, F.T. III; Guerard, C.K.; Brodzinski, R.L.; Miley, H.S.; Reeves, J.H.; Kirpichnikov, I.V.; Starostin, A.S.; Pogosov, V.S.; Tamanyan, A.G.

    1991-01-01

    Two previous independent reports of 2v ββ decay by the ITEP-YPI Collaboration, T 1/2 2v =(9±1)x10 20 yr (1σ), and the PNL-USC Collaboration, T 1/2 2v =(1.12(+0.48-0.26)x10 21 yr (2σ), are confirmed. A 0.25 kg Ge(Li) detector, isotopically enriched to 85% in 76 Ge, was operated in the PNL-USC ultralow-background facility in the Homestake gold mine. Following a single correction to the data, a spectrum resembling that observed in the earlier PNL-USC experiment, with about the same intensity per 76 Ge atom per year, was observed. The measured half-life is T 1/2 2v =(9.2(+0.7-0.4)x10 20 yr (2σ). (orig.)

  18. Spallation of 197Au with 4.4-GeV deuterons

    Directory of Open Access Journals (Sweden)

    Karapetyan G. S.

    2014-04-01

    Full Text Available A comprehensive set of 110 radioactive nuclide cross sections with mass numbers 22 ≤ A ≤ 198 amu in the interaction of 4.4-GeV deuterons with 197Au have been measured for the first time. The results including charge distributions have been parameterized in term of a 3-parameter equation in order to reproduces the isobaric distributions. Using data from the charge distributions, the total mass-yield distribution was obtained. The new experimental data of the recoil properties of reaction products were also obtained. Kinematical characteristics of the reaction products obtained from measurements of the residuals emitted in the forward and backward directions exhibit different behavior depending on the mass region. The kinematical features of reaction products have been analyzed on the basis of the two-step model of high-energy nuclear reactions and discussed in terms of the different reaction mechanisms.

  19. Thermal expansion of the magnetorefrigerant Gd5(Si,Ge)4

    NARCIS (Netherlands)

    Brück, E.H.; Nazih, M.; de Visser, A.; Zhang, L.; Tegus, O.

    2003-01-01

    We report thermal expansion measurements carried out on a single-crystal of the giant magnetocaloric effect material Gd5(Si0.43Ge0.57)4. At the magneto-structural phase transition at T0~240 K, large steps in the relative length change ÄL/L along the principle crystallographic axes are observed. The

  20. The Au modified Ge(1 1 0) surface

    Science.gov (United States)

    Zhang, L.; Kabanov, N. S.; Bampoulis, P.; Saletsky, A. M.; Zandvliet, H. J. W.; Klavsyuk, A. L.

    2018-05-01

    The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (16 × 2) and c(8 × 10) unit cells. The deposition of sub-monolayer amounts of Au and mild annealing results into de-reconstructed Ge(1 1 0) regions completely free of Ge pentagons and regions composed of nanowires that are aligned along the high symmetry [ 1 1 bar 0 ] direction of the Ge(1 1 0) surface. The de-reconstructed Ge(1 1 0) regions consist of atomic rows that are aligned along the [ 1 1 bar 0 ] direction. A substantial fraction of these substrate rows are straight and resemble the atom rows of the unreconstructed, i.e. bulk terminated, Ge(1 1 0) surface, whereas the other substrate rows have a meandering appearance. These meandering atom rows are comprised of two types of atoms, one type that appears dim, whereas the other type appears bright in filled-state scanning tunneling microscopy images. Using density functional theory calculations, we have tested more than 20 different atomic models for the meandering atom rows. The density functional theory calculations reveal that it is energetically favorable for the deposited Au atoms to exchange position with Ge atoms in the first layer. Based on these findings we conclude that the bright atoms are Ge atoms, whereas the dim atoms are Au atoms.

  1. Summary of measurements of the spin dependence in NN interactions from 2 to 12 GeV/c

    International Nuclear Information System (INIS)

    Rust, D.R.

    1975-01-01

    The status of experimental measurements of the spin dependence in NN interactions from 2 to 12 GeV/c as of June 1975 is summarized. Older data have been left out if more accurate or more complete results are available

  2. Linear microstructural features in R5(Si,Ge)4-type alloys: Difficulties in identification

    International Nuclear Information System (INIS)

    Chumbley, L.S.; Ugurlu, O.; McCallum, R.W.; Dennis, K.W.; Mudryk, Y.; Gschneidner, K.A.; Pecharsky, V.K.

    2008-01-01

    A brief review of the current literature concerning compounds based upon the R 5 (Si x Ge 1-x ) 4 structure reveals that essentially all examined alloys contain 'linear features' similar to those first observed by Szade et al. on the surface of Gd 5 Si 4 , Gd 5 Si 2 Ge 2 and Gd 5 Ge 4 samples. Attempts to characterize these features, using a variety of techniques, have proven to be a difficult task. Rather than becoming clearer and better understood, discrepancies in the reported data have resulted in much confusion. A series of comprehensive experiments involving optical, scanning and transmission electron microscopy, X-ray diffractometry, magnetization, and heat capacity measurements have been performed in an attempt to clarify the situation. These experiments, coupled with a critical examination of published data, allow certain misconceptions and apparent contradictions to be understood and explained. Of major importance is the discovery that the volume fraction of the linear feature present is far lower than what one may estimate on the basis of etched samples. The results of this study support previous data that show the linear features are a second phase of composition R 5 (Si x Ge 1-x ) 3 , and reveal the various difficulties associated with proper identification of this phase due to its small size scale and low volume percentage

  3. Lattice parameter values and phase transitions for the Cu{sub 2}Cd{sub 1-z}Mn {sub z}GeSe{sub 4} and Cu{sub 2}Cd{sub 1-z}Fe {sub z}GeSe{sub 4} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Quintero, E. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Tovar, R. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Quintero, M. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela)]. E-mail: mquinter@ula.ve; Delgado, G.E. [Laboratorio de Cristalografia, Departamento de Quimica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Morocoima, M. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Caldera, D. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Ruiz, J. [Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida 5101 (Venezuela); Mora, A.E. [Laboratorio de Analisis Quimico y Estructural de Materiales, Departamento de Fisica, Universidad de Los Andes, Merida 5101 (Venezuela); Briceno, M. [Laboratorio de Analisis Quimico y Estructural de Materiales, Departamento de Fisica, Universidad de Los Andes, Merida 5101 (Venezuela); Fernandez, J.L. [Laboratorio de Analisis Quimico y Estructural de Materiales, Departamento de Fisica, Universidad de Los Andes, Merida 5101 (Venezuela)

    2007-04-25

    X-ray powder diffraction measurements and differential thermal analysis (DTA) were made on polycrystalline samples of the Cu{sub 2}Cd{sub 1-z}Mn {sub z}GeSe{sub 4} and Cu{sub 2}Cd{sub 1-z}Fe {sub z}GeSe{sub 4} alloy systems. The diffraction patterns were used to show the equilibrium conditions and to derive lattice parameter values. The effect of the annealing temperature and cooling rate to room temperature are discussed. For the Cu{sub 2}Cd{sub 1-z}Fe {sub z}GeSe{sub 4} system, only two single solid phase fields, the tetragonal stannite {alpha} and the wurtz-stannite {delta} structures were found to occur in the diagram. For the Cu{sub 2}Cd{sub 1-z}Mn {sub z}GeSe{sub 4} system, in addition to the tetragonal stannite {alpha} and the wurtz-stannite {delta} phases, MnSe was found to exist in the diagram. The DTA experiments showed that the cooling curves for both systems exhibited effects of undercooling.

  4. Quaternary germanides RE{sub 3}TRh{sub 4}Ge{sub 4} (RE = Ce, Pr, Nd; T = Nb, Ta) - a new coloring variant of the aristotype AlB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Rolf-Dieter; Vosswinkel, Daniel; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster, Corrensstrasse 30, 48149 Muenster (Germany); Matar, Samir F. [CNRS, Universite de Bordeaux, ICMCB, UPR 9048, 33600 Pessac (France)

    2016-09-15

    The quaternary germanides RE{sub 3}TRh{sub 4}Ge{sub 4} (RE = Ce, Pr, Nd; T = Nb, Ta) were synthesized from the elements by arc-melting and subsequent annealing in a muffle furnace. The structure of Ce{sub 3}TaRh{sub 4}Ge{sub 4} was refined from single-crystal X-ray diffractometer data: new type, Pbam, a = 719.9(2), b = 1495.0(3), c = 431.61(8), wR{sub 2} = 0.0678, 1004 F{sup 2} values, and 40 variables. Isotypy of the remaining phases was evident from X-ray powder patterns. Ce{sub 3}TaRh{sub 4}Ge{sub 4} is a new superstructure variant of the aristotype AlB{sub 2} with an ordering of cerium and tantalum on the aluminum site, whereas the honey-comb network is built up by a 1:1 ordering of rhodium and germanium. This crystal-chemical relationship is discussed based on a group-subgroup scheme. The distinctly different size of tantalum and cerium leads to a pronounced puckering of the [Rh{sub 4}Ge{sub 4}] network, which shows the shortest interatomic distances (253-271 pm Rh-Ge) within the Ce{sub 3}TaRh{sub 4}Ge{sub 4} structure. Another remarkable structural feature concerns the tantalum coordination with six shorter Ta-Rh bonds (265-266 pm) and six longer Ta-Ge bonds (294-295 pm). The [Rh{sub 4}Ge{sub 4}] network fully separates the tantalum and cerium atoms (Ce-Ce > 387 pm, Ta-Ta > 431 pm, and Ce-Ta > 359 pm). The electronic density of states DOS from DFT calculations show metallic behavior with large contributions of localized Ce 4f as well as itinerant ones from all constituents at the Fermi level but no significant magnetic polarization on Ce could be identified. The bonding characteristics described based on overlap populations illustrate further the crystal chemistry observations of the different coordination of Ce1 and Ce2 in Ce{sub 3}TaRh{sub 4}Ge{sub 4}. The Rh-Ge interactions within the network are highlighted as dominant. The bonding magnitudes follow the interatomic distances and identify differences of Ta bonding vs. Ce1/Ce2 bonding with the Rh and Ge

  5. Outstanding laser damage threshold in Li2MnGeS4 and tunable optical nonlinearity in diamond-like semiconductors.

    Science.gov (United States)

    Brant, Jacilynn A; Clark, Daniel J; Kim, Yong Soo; Jang, Joon I; Weiland, Ashley; Aitken, Jennifer A

    2015-03-16

    The new Li2MnGeS4 and Li2CoSnS4 compounds result from employing a rational and simple design strategy that guides the discovery of diamond-like semiconductors (DLSs) with wide regions of optical transparency, high laser damage threshold, and efficient second-order optical nonlinearity. Single-crystal X-ray diffraction was used to solve and refine the crystal structures of Li2MnGeS4 and Li2CoSnS4, which crystallize in the noncentrosymmetric space groups Pna21 and Pn, respectively. Synchrotron X-ray powder diffraction (SXRPD) was used to assess the phase purity, and diffuse reflectance UV-vis-NIR spectroscopy was used to estimate the bandgaps of Li2MnGeS4 (Eg = 3.069(3) eV) and Li2CoSnS4 (Eg = 2.421(3) eV). In comparison with Li2FeGeS4, Li2FeSnS4, and Li2CoSnS4 DLSs, Li2MnGeS4 exhibits the widest region of optical transparency (0.60-25 μm) and phase matchability (≥1.6 μm). All four of the DLSs exhibit second-harmonic generation and are compared with the benchmark NLO material, AgGaSe2. Most remarkably, Li2MnGeS4 does not undergo two- or three-photon absorption upon exposure to a fundamental Nd:YAG beam (λ = 1.064 μm) and exhibits a laser damage threshold > 16 GW/cm(2).

  6. Syntheses, structural variants and characterization of AInM′S4 (A=alkali metals, Tl; M′ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS4 and KInSnS4 compounds

    International Nuclear Information System (INIS)

    Yohannan, Jinu P.; Vidyasagar, Kanamaluru

    2016-01-01

    Ten AInM′S 4 (A=alkali metals, Tl; M′= Ge, Sn) compounds with diverse structure types have been synthesized and characterized by single crystal and powder X-ray diffraction and a variety of spectroscopic methods. They are wide band gap semiconductors. KInGeS 4 (1-β), RbInGeS 4 (2), CsInGeS 4 (3-β), TlInGeS 4 (4-β), RbInSnS 4 (8-β) and CsInSnS 4 (9) compounds with three-dimensional BaGa 2 S 4 structure and CsInGeS 4 (3-α) and TlInGeS 4 (4-α) compounds with a layered TlInSiS 4 structure have tetrahedral [InM′S 4 ] − frameworks. On the other hand, LiInSnS 4 (5) with spinel structure and NaInSnS 4 (6), KInSnS 4 (7), RbInSnS 4 (8-α) and TlInSnS 4 (10) compounds with layered structure have octahedral [InM′S 4 ] − frameworks. NaInSnS 4 (6) and KInSnS 4 (7) compounds undergo facile topotactic ion-exchange, at room temperature, with various mono-, di- and tri-valent cations in aqueous medium to give rise to metastable layered phases. - Graphical abstract: NaInSnS 4 and KInSnS 4 compounds undergo, in aqueous medium at room temperature, facile topotactic ion-exchange with mono, di and trivalent cations. Display Omitted - Highlights: • Ten AInM′S 4 compounds with diverse structure types were synthesized. • They are wide band gap semiconductors. • NaInSnS 4 and KInSnS 4 compounds undergo facile topotactic ion-exchange at room temperature.

  7. Modifications to JLab 12 GeV Refrigerator and Wide Range Mix Mode Performance Testing Results

    Science.gov (United States)

    Knudsen, P.; Ganni, V.; Hasan, N.; Dixon, K.; Norton, R.; Creel, J.

    2017-02-01

    Analysis of data obtained during the spring 2013 commissioning of the new 4.5 K refrigeration system at Jefferson Lab (JLab) for the 12 GeV upgrade indicated a wide capacity range with good efficiency and minimal operator interaction. Testing also showed that the refrigerator required higher liquid nitrogen (LN) consumption for its pre-cooler than anticipated by the design. This does not affect the capacity of the refrigerator, but it does result in an increased LN utility cost. During the summer of 2015 the modifications were implemented by the cold box manufacturer, according to a design similar to the JLab 12 GeV cold box specification. Subsequently, JLab recommissioned the cold box and performed extensive performance testing, ranging from 20% to 100% of the design maximum capacity, and in various modes of operation, ranging from pure refrigeration, pure liquefaction, half-and-half mix mode and at selected design modes using the Floating Pressure - Ganni Cycle. The testing demonstrated that the refrigerator system has a good and fairly constant performance over a wide capacity range and different modes of operation. It also demonstrated the modifications resulted in a LN consumption that met the design for the pure refrigeration mode (which is the most demanding) and was lower than the design for the nominal and maximum capacity modes. In addition, a pulsed-load test, similar to what is expected for cryogenic systems supporting fusion experiments, was conducted to observe the response using the Floating Pressure - Ganni Cycle, which was stable and robust. This paper will discuss the results and analysis of this testing pertaining to the LN consumption, the system efficiency over a wide range of capacity and different modes and the behaviour of the system to a pulsed load.

  8. Study of the interactionπ+p at 1.2 GeV/c π+ laboratory momentum

    International Nuclear Information System (INIS)

    Ladron de Guevara, P.

    1973-01-01

    We present the main results of a 0.33 events/urban experiment of π + interactions in hydrogen at 1.2 GeV/c, using the 80 cm Saclay bubble chamber. the partial cross sections of the different reactions and the elastic differential cross section are computed by normalizing to the total cross section obtained by other groups. (Author) 34 refs

  9. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

    Science.gov (United States)

    Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

    2018-05-01

    We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

  10. Optical properties of individual site-controlled Ge quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Grydlik, Martyna, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany); Brehm, Moritz, E-mail: moritz.brehm@jku.at, E-mail: martyna.grydlik@jku.at [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Tayagaki, Takeshi [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Langer, Gregor; Schäffler, Friedrich [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria); Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany); Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany)

    2015-06-22

    We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

  11. Preparation and characterization of co-evaporated Cu{sub 2}ZnGeSe{sub 4} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Uday Bhaskar, P.; Suresh Babu, G.; Kishore Kumar, Y.B.; Sundara Raja, V., E-mail: sundararajav@rediffmail.com

    2013-05-01

    Cu{sub 2}ZnGeSe{sub 4} (CZGSe), a member of Cu{sub 2}–II–IV–VI{sub 4} family, is a promising material for solar cell absorber layer in thin film heterojunction solar cells like Cu{sub 2}ZnSnS{sub 4} and Cu{sub 2}ZnSnSe{sub 4} which have been explored in recent years as alternate to CuInGaSe{sub 2} solar cells. The effect of substrate temperature (523 K–723 K) on the growth of CZGSe films is investigated by studying their structural, morphological and optical properties. Raman spectroscopy studies have been done to identify the phases in addition to X-ray diffraction studies. CZGSe films deposited at different substrate temperatures and annealed at 723 K in selenium atmosphere are Cu-rich and Ge-poor and contained secondary phases Cu{sub (2−x)}Se and ZnSe. CZGSe films obtained by reducing the starting Cu mass by 10% were found to be single phase with stannite structure, the lattice parameters being a = 0.563 nm, c = 1.101 nm. The direct optical band gap of CZGSe films is found to be 1.63 eV which is close to ideal band gap of 1.50 eV for the highest photovoltaic conversion efficiency. The films are found to be p-type. - Highlights: • Synthesis of Cu{sub 2}ZnGeSe{sub 4} films for solar cell absorber layer • Effect of substrate temperature on the growth of co-evaporated Cu{sub 2}ZnGeSe{sub 4} films • X-ray diffraction, Raman and morphological studies of Cu{sub 2}ZnGeSe{sub 4} thin films.

  12. The JLab 12 GeV Energy Upgrade of CEBAF for QCD and Hadronic Physics

    International Nuclear Information System (INIS)

    Lawrence Cardman; Leigh Harwood

    2007-01-01

    CEBAF at Jefferson Lab is a 5-pass, recirculating cw electron linac operating at ∼6 GeV and devoted to basic research in nuclear physics. The 12 GeV Upgrade is a major project, sponsored by the DOE Office of Nuclear Physics, that will expand its research capabilities substantially by doubling the maximum energy and adding major new experimental apparatus. We anticipate that the project will receive Critical Decision 2 approval this year and begin construction in 2008. The research program motivating the Upgrade includes: the study of hybrid mesons, which involve excited states of the glue, to explore the nature of quark confinement; dramatic improvements in our understanding of the QCD structure of the hadrons through the extension of our knowledge of their parton distribution functions to high xBjorken, where they are dominated by underlying valence quark structure, and a program of nucleon ''tomography'' via measurements of the Generalized Parton Distributions (GPDs), a broad program of experiments in the physics of nuclei that aims to understand the QCD basis for the nucleon-nucleon force and how nucleons and mesons arise as an approximation to the underlying quark-gluon structure; and precision tests of the Standard Model through parity violating deep inelastic and Moeller scattering. The Upgrade includes: doubling the accelerating voltages of the linacs by adding 10 new high-performance cryomodules; the requisite expansion of the 2K cryogenics plant and rf power systems to support these cryomodules; upgrading the beam transport system from 6 to 12 GeV through extensive re-use and/or modification of existing hardware; and the addition of one recirculation arc, a new experimental area, and the beamline to it; and the construction of major new experimental equipment for the GPD, high-xBjorken, and hybrid meson programs. The presentation will describe the science briefly and provide some details about the accelerator plans

  13. Production of charged sigma-hyperons in 4.2 GeV/c K-p interactions

    International Nuclear Information System (INIS)

    Groot, A.J. de

    1975-01-01

    Results from a 4.2 GeV/c K - p experiment are presented. In a general review of the experiment particular attention is paid to the scanning procedure. Problems connected with charged decays (kinks) are dealt with. Modifications are treated that have been implemented in the kinematical fitting programme in order to improve the pass rate of events with a straight hyperon-track. Geometrical losses for kinks and ways to correct for them are discussed. Reactions of the type K - p→0 - 1/2 + are considered and Veneziano models for K - p→Σ + π - and K - p→Σ + π - π 0 . A new B 5 -approach is made to the reaction K - p→Σ + π - π 0 , using a five-point function. (V.J.C.)

  14. GePEToS: A Geant4 Monte Carlo simulation package for positron emission tomography

    International Nuclear Information System (INIS)

    Jan, Sebastien; Collot, Johann; Gallin-Martel, Marie-Laure; Martin, Philippe; Mayet, Frederic; Tournefier, Edwige

    2003-01-01

    GePEToS is a simulation framework developed over the last few years for assessing the instrumental performance of future PET scanners. It is based on Geant4, written in Object- Oriented C++ and runs on Linux platforms. The validity of GePEToS has been tested on the well-known Siemens ECAT EXACT HR+ camera. The results of two application examples are presented: the design optimization of a liquid Xe μPET camera dedicated to small animal imaging as well as the evaluation of the effect of a strong axial magnetic field on the image resolution of a Concorde P4 μPET camera. Index Terms-Positron Emission Tomography, Monte Carlo Simulation, Geant 4. (authors)

  15. Characteristics of the process K+p→K+anti ppp at 12 GeV/c

    International Nuclear Information System (INIS)

    Armstrong, T.A.; Frame, D.; Hughes, I.S.; Kumar, B.R.; Lewis, G.M.; Macallister, J.B.; Stewart, D.T.; Turnbull, R.M.

    1979-01-01

    Data are presented on the reaction K + p→K + anti ppp at 12 GeV/c from an experiment using the OMEGA spectrometer at CERN. A clear Λ(1520) signal is observed in the process K + p→anti Λ(1520)pp and angular distributions and correlations are presented for this process. The angular distributions for the reaction in which anti Λ(1520) is not produced show an appreciable backward K + peak. (Auth.)

  16. 4πβ(PS)–4πγ(GE) list-mode coincidence counter and its applications

    International Nuclear Information System (INIS)

    Yamada, T.; Kawada, Y.; Sato, Y.

    2016-01-01

    We developed a 4πβ–4πγ counter composed of a 4π plastic scintillation detector and a well-type Ge detector, employing digital coincidence counting and data storage in list-mode. In both of the β- and γ-channels, the amplified pulses from a linear amplifier feed the input channel of the digitizer directly via delay circuits. A signal from the peak-hold of each channel is fed to a sliding scale ADC (14 bits, 200 MHz clock) after peak detection and converted into 13 bit digital data, registered along with a time stamp and event channel allowing various data analysis to be implemented offline. When employing multiple gamma window settings, a weighted average of each apparent efficiency might be introduced to improve the efficiency functions. This idea was investigated along with reasonable estimates of the weighing factors, and activity measurements of 59 Fe using this system are presented. - Highlights: • A4πβ–4πγ system was developed, employing a well-type Ge-SSD and a plastic scintillator. • This system was employed to the measurement of 59 Fe with multiple γ-window settings. • An almost flat extrapolation curve could be obtained with appropriate weighting proecdures.

  17. Unconventional emergence of elastic softening induced by magnetic fields in the unusual heavy-fermion compound PrFe sub 4 P sub 1 sub 2

    CERN Document Server

    Nakanishi, Y; Yamaguchi, T; Hazama, H; Nemoto, Y; Goto, T; Matsuda, T D; Sugawara, H; Sato, H

    2002-01-01

    Ultrasonic measurement on the filled skutterudite compound PrFe sub 4 P sub 1 sub 2 exhibits a mysterious temperature dependence of the elastic constant (C sub 1 sub 1 - C sub 1 sub 2)/2. Pronounced elastic softening at low temperatures is revived by applying a magnetic field. This fact strongly suggests the 4f-multiplet ground state of the Pr ion split by the crystalline electric field (CEF) to be a GAMMA sub 3 non-Kramers doublet. The expectation value of a quadrupole moment with GAMMA sub 3 symmetry in the CEF ground state, which leads to elastic softening at low temperature, was evaluated by theoretical fitting to the present results. This may imply that suppression of the electric quadrupole Kondo effect occurs in PrFe sub 4 P sub 1 sub 2 and the quadrupole moment becomes steady due to the application of a magnetic field. (letter to the editor)

  18. High field Moessbauer and magnetic investigations of Pr0.73Fe4Sb12

    International Nuclear Information System (INIS)

    Reissner, Michael; Bauer, Ernst; Steiner, Walter; Rogl, Peter

    2004-01-01

    In accordance with the filling factor determined by X-ray investigations two Fe sites were identified in the in-field 57 Fe Moessbauer spectra. The derived internal fields at 4.2 K were small (0.35 and 1.45 T at external fields of 13.5 T), whereas from magnetic measurements μ eff ∼2.7 μ B was estimated for the Fe 4 Sb 12 -sublattice

  19. Forward $\\pi^{+-}$ production in p-$O_2$ and p-$N_2$ interactions at 12 GeV/c

    CERN Document Server

    Catanesi, M.G.; Edgecock, R.; Ellis, M.; Gossling, C.; Bunyatov, S.; Krasnoperov, A.; Popov, B.; Tereschenko, V.; Di Capua, E.; Vidal-Sitjes, G.; Artamonov, A.; Giani, S.; Gilardoni, S.; Gorbunov, P.; Grant, A.; Grossheim, A.; Ivanchenko, A.; Ivanchenko, V.; Kayis-Topaksu, A.; Panman, J.; Papadopoulos, I.; Tcherniaev, E.; Tsukerman, I.; Wiebusch, C.; Zucchelli, P.; Blondel, A.; Borghi, S.; Morone, M.C.; Prior, G.; Schroeter, R.; Meurer, C.; Gastaldi, U.; Mills, G.B.; Graulich, J.S.; Gregoire, G.; Bonesini, M.; Ferri, F.; Kirsanov, M.; Bagulya, A.; Grichine, V.; Polukhina, N.; Palladino, V.; Coney, L.; Schmitz, D.; Barr, G.; Bobisut, F.; Gibin, D.; Guglielmi, A.; Mezzetto, M.; Dumarchez, J.; Dore, U.; Orestano, D.; Pastore, F.; Tonazzo, A.; Tortora, L.; Booth, C.; Howlett, L.; Bogomilov, M.; Kolev, D.; Tsenov, R.; Piperov, Stefan; Temnikov, P.; Apollonio, M.; Chimenti, P.; Giannini, G.; Burguet-Castell, J.; Cervera-Villanueva, A.; Gomez-Cadenas, J.J.; Martin-Albo, J.; Sorel, M.

    2008-01-01

    Measurements of double-differential charged pion production cross-sections in interactions of 12 GeV/c protons on O_2 and N_2 thin targets are presented in the kinematic range 0.5 GeV/c < p_{\\pi} < 8 GeV/c and 50 mrad < \\theta_{\\pi} < 250 mrad (in the laboratory frame) and are compared with p--C results. For p--N_2 (p--O_2) interactions the analysis is performed using 38576 (7522) reconstructed secondary pions. The analysis uses the beam instrumentation and the forward spectrometer of the HARP experiment at CERN PS. The measured cross-sections have a direct impact on the precise calculation of atmospheric neutrino fluxes and on the improved reliability of extensive air shower simulations by reducing the uncertainties of hadronic interaction models in the low energy range. In particular, the present results allow the common hypothesis that p--C data can be used to predict the p--N_2 and p--O_2 pion production cross-sections to be tested.

  20. Angular distributions of target fragments from the reactions of 292 MeV - 25.2 GeV 12C with 197Au and 238U

    International Nuclear Information System (INIS)

    Morita, Y.

    1983-01-01

    The angular distributions of the 197 Au target fragments were all forwardly peaked. Extensively forward peaked angular distributions were observed at the non-relativistic projectile energies (292 MeV, 1.0 GeV). No obvious differences were observed in the angular distributions at the different relativistic projectile energies of 3.0 GeV, 12.0 GeV and 25.2 GeV. The characteristic angular distribution pattern from the relativistic projectile energy experiments was also observed in the non-relativistic energy experiments. Maximum degree of forward-peaking in the angular distributions at each projectile energy was observed at the product mass number (A) around 190 from the 292 MeV projectile energy, at A = 180 from 1.0 GeV and at A =175 from 3.0 GeV and 12.0 GeV. In general, two different types of angular distributions were observed in the relativistic projectile energy experiments with the 238 U target. Isotropic angular distributions were observed for the fission product nuclides. The angular distributions of the fission products at the intermediate (292 MeV) energy showed slightly forward peaked angular distributions. Because of the long projectile-target interaction time in the primary nuclear reaction, larger momentum was transferred from the projectile to the target nucleus. Steep forward-peaked angular distributions were also observed with the 238 U target

  1. Training effects in Gd5Ge4: role of microstructure

    International Nuclear Information System (INIS)

    Manekar, Meghmalhar; Chattopadhyay, M K; Kaul, R; Pecharsky, V K; Jr, K A Gschneidner

    2006-01-01

    Detailed optical metallographic studies at room temperature on polycrystalline Gd 5 Ge 4 are presented for two cases: (a) a sample in the as-cast condition and (b) the same sample subjected to a known number of temperature and magnetic field cycles. A herringbone- (criss-cross-) like pattern whose characteristic feature size extends to ∼20 μm is observed in the as-cast sample. The herringbone pattern at room temperature is interpreted as arising due to a long-lived (kinetically arrested) metastable phase. This herringbone pattern can be trained to form a pattern having a different morphology by cycling the sample through the low-temperature field induced magneto-structural transition. Training effects are also observed in magneto-transport and magnetization measurements as the sample is subjected to temperature and field cycles. Based on heuristic arguments, a model is proposed which self-consistently explains anomalies in transport and magnetization properties in terms of changes occurring in the microstructure of the sample. These results highlight the need for analysing the interesting properties of Gd 5 Ge 4 and its family of alloys with microstructure as an important component

  2. Cross sections of neutron production with energies of 7,5-190 MeV in the p+A → n+X reaction at 1-9 GeV/c, π++A → n+X reaction at 1-6 GeV/c, π-+A → n+X reaction at 1,4 and 5 GeV/c

    International Nuclear Information System (INIS)

    Bayukov, Yu.D.; Gavrilov, V.B.; Goryainov, N.A.

    1983-01-01

    The tables of cross sections of neutron production with energies 7.5-190 MeV for reactions p+A→n+X at 1-9 GeV/c, π + +A→n+X at 1-6 GeV/c and π - +A→n+X at 1.4 and 5 GeV/c are presented. A-dependence (for Be, C, Al, Ti, Fe, Cu, Nb, Cd, Sn, Ta, Pb and U targets) for incident 7.5 GeV/c protons and dependence on incident particle momentum (for protons at 1, 1.4, 2, 3, 5, 6, 6.25, 6.5, 7, 7.5, 8.25, 8.5 and 9 GeV/c, for π + -mesons at 1, 1.4, 2, 3, 4, 5 and 6 GeV/c, π - -mesons at 1,4 and 5 GeV/c) for C, Cu, Pb, U targets are measured in detail, for secondary neutrons at 119 deg. Detailed angular dependences in the range from 10 deg to 160 deg are presented for C, Cu, Pb, U targets for incident 7.5 GeV/c protons and 5 GeV/c π - -mesons. Some of typical dependences are illustrated by diagrams

  3. Inelastic neutron scattering in the spin wave energy gap of the polydomain γ-Mn(12%Ge) alloy

    International Nuclear Information System (INIS)

    Jankowska-Kisielinska, J.; Mikke, K.

    1999-01-01

    The subject of the present experiment was the investigation of the inelastic neutron scattering (INS) for energy transfers lower than and close to the energy gap of the spin wave spectrum for long wavelengths. The aim was a search for the excitations at the magnetic Brillouin zone (MBZ) boundary in polydomain Mn(12%Ge) alloy. The present measurements were performed by a 3-axis spectrometer at Maria Reactor at IEA in Swierk. We observed the INS in the polydomain Mn(12%Ge) alloy for energies smaller than and close to the energy gap value of the spin wave spectrum at room temperature. The observed intensity can be treated as a sum of intensity of neutrons scattered on spin waves around magnetic Brillouin zone centre and that of neutrons scattered on fluctuations at the zone boundary. The intensity of both components for energies 2-6 MeV was found to be of the same order. For higher energies spin waves around magnetic zone centre dominate. (author)

  4. Specific features of band structure and optical anisotropy of Cu{sub 2}CdGeSe{sub 4} quaternary compounds

    Energy Technology Data Exchange (ETDEWEB)

    Brik, M.G., E-mail: brik@fi.tartu.ee [College of Mathematics and Physics, Chongqing University of Posts and Telecommunications, Chongqing 400065 (China); Institute of Physics, University of Tartu, Riia 142, Tartu 51014 (Estonia); Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, PL-42200 Czestochowa (Poland); Parasyuk, O.V. [Department of Chemistry, Eastern European National University, Voli 13, Lutsk 43025 (Ukraine); Myronchuk, G.L. [Department of Physics, Eastern European National University, Voli 13, Lutsk 43025 (Ukraine); Kityk, I.V. [Institute of Materials Science and Engineering, Technical University of Czestochowa, Al. Armii Krajowej 19, 42-200 Czestochowa (Poland)

    2014-09-15

    Complex theoretical and experimental studies of the band structure and optical functions of a new Cu{sub 2}CdGeSe{sub 4} quaternary crystal are reported. The benchmark band structure calculations were performed using the first-principles methods. As a result, the structural, electronic, optical and elastic properties of Cu{sub 2}CdGeSe{sub 4} were calculated in the general gradient approximation (GGA) and local density approximation (LDA). The calculated dielectric function and optical absorption spectra exhibit some anisotropic behavior. Detailed analysis of the band energy dispersion and effective space charge density helped in establishing the origin of the band structure anisotropy. All calculated properties are compared with the experimental data. An additional comparison with a similar crystal of Cu{sub 2}CdGeSe{sub 4} allowed to reveal the role played by the anions (S or Se) in formation of the optical properties of these two materials. - Highlights: • The structural, electronic, optical properties of Cu{sub 2}CdGeSe{sub 4} were calculated. • Pressure effects on these properties were modeled. • Comparison with a similar compound of Cu{sub 2}CdGeS{sub 4} was performed.

  5. Atomic structure of a stable high-index Ge surface: G2(103)-(4x1)

    DEFF Research Database (Denmark)

    Seehofer, L.; Bunk, O.; Falkenberg, G.

    1997-01-01

    Based on scanning tunneling microscopy and surface X-ray diffraction, we propose a complex structural model for the Ge(103)-(4 x 1) reconstruction. Each unit cell contains two (103) double steps, which gives rise to the formation of stripes of Ge atoms oriented in the [] direction....... The stripes and the spaces between them are covered with threefold-coordinated Ge adatoms. Charge is transferred from the bulk-like edge atoms of the double steps to the adatoms. The formation of the reconstruction can be explained in terms of stress relief, charge transfer, and minimization of the dangling...

  6. Study of the Nuclear Transparency in $\\alpha$ + A Reactions at Energies $\\geq$ 12 GeV/nucleon

    CERN Multimedia

    2002-01-01

    The question about transparency is crucial for heavy ion reaction studies. If the transparency is low at 10-15 GeV per nucleon then very large baryon densities can be achieved in this energy range, maybe enough to produce quark-gluon plasma in U+U collisions. We propose to measure, event by event, pseudo-rapidity and multiplicity distributions of singly charged relativistic particles (@b~$>$~0.7) globally and in selected regions of rapidity as well as multiplicities of recoiling protons (30-400~Me charged nuclear fragments. These studies will explore general features of @a+A reactions at energies @$>$~12~GeV/nucleon. The main goal of the experiment is to measure the transparency of nuclear matter in this energy range. The detector will be nuclear emulsion.

  7. Structure cristalline du composé intermétallique Ni18Ge12

    Directory of Open Access Journals (Sweden)

    Mohammed Kars

    2015-03-01

    Full Text Available Single crystals of octadecanickel dodecagermanide were grown by chemical transport reaction. The intermetallic compound crystallizes in a superstructure of the hexagonal NiAs type (B8 type. All atoms in the asymmetric unit lie on special positions except one Ni atom (two Ni atoms have site symmetry -6.. and another one has site symmetry .2. while the Ge atoms have site symmetries 32., m.. and 3... In the structure, the Ni atoms are arranged in 11- or 13-vertex polyhedra (CN = 11–13. The coordination polyhedra of the Ge atoms are bicapped square antiprisms (CN = 10 or 11-vertex polyhedra (CN = 11. The structure exhibits strong Ge...Ni interactions, but no close Ge...Ge contacts are observed. The Ni atoms with CN = 13 form infinite chains along [001] with an Ni—Ni distance of 2.491 (2 Å.

  8. Phase equilibria, crystal chemistry, electronic structure and physical properties of Ag-Ba-Ge clathrates

    Energy Technology Data Exchange (ETDEWEB)

    Zeiringer, I.; Chen Mingxing [Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria); Bednar, I.; Royanian, E.; Bauer, E. [Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstr. 8-10, 1040 Wien (Austria); Podloucky, R.; Grytsiv, A. [Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria); Rogl, P., E-mail: peter.franz.rogl@univie.ac.at [Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria); Effenberger, H. [Institute of Mineralogy and Crystallography, University of Vienna, A-1090 Wien (Austria)

    2011-04-15

    In the Ag-Ba-Ge system the clathrate type-{Iota} solid solution, Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y}, extends at 800 deg. C from binary Ba{sub 8}Ge{sub 43{open_square}3} ({open_square} is a vacancy) to Ba{sub 8}Ag{sub 5.3}Ge{sub 40.7}. For the clathrate phase (1 {<=} x {<=} 5.3) the cubic space group Pm3-bar n was established by X-ray powder diffraction and confirmed by X-ray single-crystal analyses of the samples Ba{sub 8}Ag{sub 2.3}Ge{sub 41.9{open_square}1.8} and Ba{sub 8}Ag{sub 4.4}Ge{sub 41.3{open_square}0.3}. Increasing the concentration of Ag causes the lattice parameters of the solid solution to increase linearly from a value of a = 1.0656 (x = 0, y = 3) to a = 1.0842 (x = 4.8, y = 0) nm. Site preference determination using X-ray refinement reveals that Ag atoms preferentially occupy the 6d site randomly mixed with Ge and vacancies, which become filled in the compound Ba{sub 8}Ag{sub 4.8}Ge{sub 41.2} when the Ag content increases. At 600 {sup o}C the phase region of the clathrate solution Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y} becomes separated from the Ba-Ge boundary and extends from 6.6 to 9.8 at.% Ag. The compound Ba{sub 6}Ge{sub 25} (clathrate type-{Iota}X) dissolves at 800 {sup o}C a maximum of 1.5 at.% Ag. The homogeneity regions of the two ternary compounds BaAg{sub 2-x}Ge{sub 2+x} (ThCr{sub 2}Si{sub 2}-type, 0.2 {<=} x {<=} 0.7) and Ba(Ag{sub 1-x}Ge{sub x}){sub 2} (AlB{sub 2}-type, 0.65 {<=} x {<=} 0.75) were established at 800 deg. C. Studies of transport properties for the series of Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y} compounds evidenced that electrons are the predominant charge carriers with the Fermi energy close to a gap. Its position can be fine-tuned by the substitution of Ge by Ag atoms and by mechanical processing of the starting material, Ba{sub 8}Ge{sub 43}. The proximity of the electronic structure at Fermi energy of Ba{sub 8}Ag{sub x}Ge{sub 46-x-y{open_square}y} to a gap is also corroborated by density

  9. FMR study of carbon nanotubes filled with Fe{sub 3}O{sub 4} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kopyl, S., E-mail: svitlanakopyl@ua.pt [NRD-TEMA, Department of Mechanical Engineering, Aveiro Institute of Nanotechnology (AIN), University of Aveiro, Aveiro 3810-193 (Portugal); Timopheev, A.A., E-mail: andreyt@ua.pt [Physics Department and I3N, University of Aveiro, Aveiro 3810-193 (Portugal); Bystrov, V.S. [Department of Materials and Ceramic Engineering and CICECO, University of Aveiro, Aveiro 3810-193 (Portugal); Institute of Mathematical Problems of Biology RAS, 142290 Pushchino (Russian Federation); Bdikin, I. [NRD-TEMA, Department of Mechanical Engineering, Aveiro Institute of Nanotechnology (AIN), University of Aveiro, Aveiro 3810-193 (Portugal); Teixeira, B.M.S. [Physics Department and I3N, University of Aveiro, Aveiro 3810-193 (Portugal); Maevskij, E. [Institute of Theoretical and Experimental Biophysics RAS, 142290 Puschino (Russian Federation); Sobolev, N.A. [Physics Department and I3N, University of Aveiro, Aveiro 3810-193 (Portugal); Sousa, A.C.M. [NRD-TEMA, Department of Mechanical Engineering, Aveiro Institute of Nanotechnology (AIN), University of Aveiro, Aveiro 3810-193 (Portugal)

    2014-05-01

    Ordered arrays of carbon nanotubes were produced using a non-catalytic chemical vapour deposition. The multiwall nanotubes with an inner diameter of 120 nm were grown inside porous alumina templates and then filled with a magnetic colloid of 7.5 nm Fe{sub 3}O{sub 4} particles. X-ray diffraction, electron microscopy and ferromagnetic resonance (FMR) were used to characterize structural and magnetic properties of the grown samples. To estimate the filling factor from the angular dependence of the FMR resonance field, we have derived an effective demagnetization factor for our system using the formalism proposed by Skomsky and Dubowik. Angular dependence of the FMR line width allows one to conclude about the non-uniform filling, while temperature dependent measurements reflect typical features of a superparamagnetic resonance. - Highlights: • Synthesis of CNTs inside of alumina membrane and filling it with Fe{sub 3}O{sub 4} particles. • X-ray diffraction and electron microscopy study of the samples. • Magnetic properties of the samples studied by FMR. • Filling factor has been determined from the angular dependences of FMR. • Resulted magnetic CNTs are attractive for production of magnetic nanofluids.

  10. Ripple characteristic of the main ring magnet power supply for the KEK 12 GeV PS

    International Nuclear Information System (INIS)

    Sato, Hikaru; Sueno, Tuyosi; Mikawa, Katsuhiko

    1995-01-01

    First of all, general description of the main ring magnet power supply for the KEK 12 GeV PS will be described. The main power supply consists of thyristor rectifiers, DC filters, reactive power compensators, AC harmonic filters and control systems. Devices and control systems for suppressing ripple component of magnet field will be described. (author)

  11. 75As-NQR study of the hybridization gap semiconductor CeOs4As12

    International Nuclear Information System (INIS)

    Yogi, M; Niki, H; Higa, N; Kawata, T; Sekine, C

    2016-01-01

    We performed an 75 As nuclear quadrupole resonance (NQR) measurement on CeOs 4 As 12 . The 75 As-NQR spectrum shape demonstrates that the Ce-site filling fraction of our high-pressure synthesized sample is close to unity. A presence of the c — f hybridization gap is confirmed from the temperature dependence of the nuclear spin-lattice relaxation rate 1/T 1 . An increase of 1/T 1 below ∼3 K indicates a development of the spin fluctuations. The 1/T 1 for CeOs 4 As 12 shows similar behavior as that for CeOs 4 Sb 12 with different magnitude of the c — f hybridization gap. An absence of phase transition in CeOs 4 As 12 may be caused by the increase of the c — f hybridization, which increases the gap magnitude and reduces the residual density of state inside the gap. (paper)

  12. Monte Carlo simulations for the optimisation of low-background Ge detector designs

    Energy Technology Data Exchange (ETDEWEB)

    Hakenmueller, Janina; Heusser, Gerd; Maneschg, Werner; Schreiner, Jochen; Simgen, Hardy; Stolzenburg, Dominik; Strecker, Herbert; Weber, Marc; Westernmann, Jonas [Max-Planck-Institut fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg (Germany); Laubenstein, Matthias [Laboratori Nazionali del Gran Sasso, Via G. Acitelli 22, 67100 Assergi L' Aquila (Italy)

    2015-07-01

    Monte Carlo simulations for the low-background Ge spectrometer Giove at the underground laboratory of MPI-K, Heidelberg, are presented. In order to reduce the cosmogenic background at the present shallow depth (15 m w.e.) the shielding of the spectrometer includes an active muon veto and a passive shielding (lead and borated PE layers). The achieved background suppression is comparable to Ge spectrometers operated in much greater depth. The geometry of the detector and the shielding were implemented using the Geant4-based toolkit MaGe. The simulations were successfully optimised by determining the correct diode position and active volume. With the help of the validated Monte Carlo simulation the contribution of the single components to the overall background can be examined. This includes a comparison between simulated results and measurements with different fillings of the sample chamber. Having reproduced the measured detector background in the simulation provides the possibility to improve the background by reverse engineering of the passive and active shield layers in the simulation.

  13. Synthesis and properties of Rb2GeF6:Mn4+ red-emitting phosphors

    Science.gov (United States)

    Sakurai, Shono; Nakamura, Toshihiro; Adachi, Sadao

    2018-02-01

    Rb2GeF6:Mn4+ red-emitting phosphors were synthesized by coprecipitation and their structural and optical properties were investigated by laser microscopy observation, X-ray diffraction (XRD) analysis, photoluminescence (PL) analysis, PL excitation (PLE) spectroscopy, and PL decay measurement. Single-crystalline ingots in the form of a hexagonal pyramid were prepared with a basal plane diameter of ˜2 mm. The XRD analysis suggested that Rb2GeF6 crystallizes in the hexagonal structure (C6v4 = P63mc) with a = 0.5955 nm and c = 0.9672 nm. The phosphor exhibited the strong Mn4+-related zero-phonon line (ZPL) emission peak typically observed in host crystals with piezoelectrically active lattices such as a hexagonal lattice. The quantum efficiencies of the bulk ingot and powdered samples were 87 and 74%, respectively, with nearly the same luminescence decay time of ˜6 ms. The exact ZPL energies and related crystal-field and Racah parameters were obtained from the PL and PLE spectra by Franck-Condon analysis. Temperature-dependent PL intensities were analyzed from T = 20 to 500 K using a thermal quenching model by considering Bose-Einstein phonon statistics. A comparative discussion on the phosphor properties of Rb2GeF6:Mn4+ and Rb2MF6:Mn4+ with M = Si and Ti was also given.

  14. The K-p charge exchange and elastic scattering reactions at 4.2 GeV/c

    International Nuclear Information System (INIS)

    Marzano, F.; Toet, D.Z.; Gavillet, Ph.; Gay, J.B.; Hemingway, R.J.; Marechal, B.; Blokzijl, R.; Jongejans, B.; Kluyver, J.C.; Wolters, G.F.; Grossmann, P.; Wells, J.

    1977-01-01

    In this letter results are presented on the reactions K - p→anti K 0 n and K - p→K - p from a high statistics CERN 2 m etre hydrogen bubble chamber exposure a t 4.15 GeV/c. The behaviour of the differential cross section as a function of four-momentum transfer shows remarkable similarities between the two reactions studied. From a comparison of the data with K + p elastic scattering at 4.27 GeV/c some conclusions are drawn concerning the magnitude of the contributing amplitudes. (Auth.)

  15. A measurement of the photon structure function F$_{2}^{\\gamma}$ at an average Q$^{2}$ of 12 GeV$^{2}$/c$^{4}$ : results from DELPHI

    CERN Document Server

    Abreu, P; Adye, T; Agasi, E; Ajinenko, I; Aleksan, Roy; Alekseev, G D; Allport, P P; Almehed, S; Alvsvaag, S J; Amaldi, Ugo; Amato, S; Andreazza, A; Andrieux, M L; Antilogus, P; Apel, W D; Arnoud, Y; Augustin, J E; Augustinus, A; Baillon, Paul; Bambade, P; Barão, F; Barate, R; Bardin, Dimitri Yuri; Barker, G J; Baroncelli, A; Bärring, O; Barrio, J A; Bartl, Walter; Bates, M J; Battaglia, Marco; Batyunya, B; Baubillier, M; Baudot, J; Becks, K H; Begalli, M; Beillière, P; Belokopytov, Yu A; Belous, K S; Benvenuti, Alberto C; Berggren, M; Bertrand, D; Bianchi, F; Bigi, M; Bilenky, S M; Billoir, P; Bloch, D; Blume, M; Blyth, S; Bocci, V; Bolognese, T; Bonesini, M; Bonivento, W; Booth, P S L; Borisov, G; Bosio, C; Bosworth, S; Botner, O; Bouquet, B; Bourdarios, C; Bowcock, T J V; Bozzo, M; Branchini, P; Brand, K D; Brenke, T; Brenner, R A; Bricman, C; Brillault, L; Brown, R C A; Brückman, P; Brunet, J M; Bugge, L; Buran, T; Burgsmüller, T; Buschmann, P; Buys, A; Caccia, M; Calvi, M; Camacho-Rozas, A J; Camporesi, T; Canale, V; Canepa, M; Cankocak, K; Cao, F; Carena, F; Carrilho, P; Carroll, L; Caso, Carlo; Castillo-Gimenez, M V; Cattai, A; Cavallo, F R; Cerrito, L; Chabaud, V; Charpentier, P; Chaussard, L; Chauveau, J; Checchia, P; Chelkov, G A; Chierici, R; Chliapnikov, P V; Chochula, P; Chorowicz, V; Cindro, V; Collins, P; Contreras, J L; Contri, R; Cortina, E; Cosme, G; Cossutti, F; Crawley, H B; Crennell, D J; Crosetti, G; Cuevas-Maestro, J; Czellar, S; Dahl-Jensen, Erik; Dahm, J; D'Almagne, B; Dam, M; Damgaard, G; Daum, A; Dauncey, P D; Davenport, Martyn; Da Silva, W; Defoix, C; Della Ricca, G; Delpierre, P A; Demaria, N; De Angelis, A; De Boeck, H; de Boer, Wim; De Brabandere, S; De Clercq, C; La Vaissière, C de; De Lotto, B; De Min, A; De Paula, L S; De Saint-Jean, C; Dijkstra, H; Di Ciaccio, Lucia; Djama, F; Dolbeau, J; Dönszelmann, M; Doroba, K; Dracos, M; Drees, J; Drees, K A; Dris, M; Dufour, Y; Dupont, F; Edsall, D M; Ehret, R; Eigen, G; Ekelöf, T J C; Ekspong, Gösta; Elsing, M; Engel, J P; Ershaidat, N; Erzen, B; Espirito-Santo, M C; Falk, E; Fassouliotis, D; Feindt, Michael; Fenyuk, A; Ferrer, A; Filippas-Tassos, A; Firestone, A; Föth, H; Fokitis, E; Fontanelli, F; Formenti, F; Franek, B J; Frenkiel, P; Fries, D E C; Frodesen, A G; Frühwirth, R; Fulda-Quenzer, F; Fürstenau, H; Fuster, J A; Galloni, A; Gamba, D; Gandelman, M; García, C; García, J; Gaspar, C; Gasparini, U; Gavillet, P; Gazis, E N; Gelé, D; Gerber, J P; Gibbs, M; Gillespie, D; Gokieli, R; Golob, B; Gopal, Gian P; Gorn, L; Górski, M; Guz, Yu; Gracco, Valerio; Graziani, E; Grosdidier, G; Gunnarsson, P; Günther, M; Guy, J; Haedinger, U; Hahn, F; Hahn, M; Hahn, S; Hajduk, Z; Hallgren, A; Hamacher, K; Hao, W; Harris, F J; Hedberg, V; Hernández, J J; Herquet, P; Herr, H; Hessing, T L; Higón, E; Hilke, Hans Jürgen; Hill, T S; Holmgren, S O; Holt, P J; Holthuizen, D J; Houlden, M A; Hrubec, Josef; Huet, K; Hultqvist, K; Ioannou, P; Jackson, J N; Jacobsson, R; Jalocha, P; Janik, R; Jarlskog, G; Jarry, P; Jean-Marie, B; Johansson, E K; Jönsson, L B; Jönsson, P E; Joram, Christian; Juillot, P; Kaiser, M; Kalmus, George Ernest; Kapusta, F; Karlsson, M; Karvelas, E; Katsanevas, S; Katsoufis, E C; Keränen, R; Khomenko, B A; Khovanskii, N N; King, B J; Kjaer, N J; Klein, H; Klovning, A; Kluit, P M; Köhne, J H; Köne, B; Kokkinias, P; Koratzinos, M; Korcyl, K; Kostyukhin, V; Kourkoumelis, C; Kuznetsov, O; Kramer, P H; Krammer, Manfred; Kreuter, C; Królikowski, J; Kronkvist, I J; Krumshtein, Z; Krupinski, W; Kubinec, P; Kucewicz, W; Kurvinen, K L; Lacasta, C; Laktineh, I; Lamblot, S; Lamsa, J; Lanceri, L; Lane, D W; Langefeld, P; Lapin, V; Last, I; Laugier, J P; Lauhakangas, R; Leder, Gerhard; Ledroit, F; Lefébure, V; Legan, C K; Leitner, R; Lemoigne, Y; Lemonne, J; Lenzen, G; Lepeltier, V; Lesiak, T; Liko, D; Lindner, R; Lipniacka, A; Lippi, I; Lörstad, B; Lokajícek, M; Loken, J G; López, J M; López-Fernandez, A; López-Aguera, M A; Loukas, D; Lutz, P; Lyons, L; MacNaughton, J N; Maehlum, G; Maio, A; Malychev, V; Mandl, F; Marco, J; Maréchal, B; Margoni, M; Marin, J C; Mariotti, C; Markou, A; Maron, T; Martínez-Rivero, C; Martínez-Vidal, F; Martí i García, S; Matorras, F; Matteuzzi, C; Matthiae, Giorgio; Mazzucato, M; McCubbin, M L; McKay, R; McNulty, R; Medbo, J; Meroni, C; Meyer, W T; Myagkov, A; Michelotto, M; Migliore, E; Mirabito, L; Mjörnmark, U; Moa, T; Møller, R; Mönig, K; Monge, M R; Morettini, P; Müller, H; Mundim, L M; Murray, W J; Muryn, B; Myatt, Gerald; Naraghi, F; Navarria, Francesco Luigi; Navas, S; Negri, P; Némécek, S; Neumann, W; Neumeister, N; Nicolaidou, R; Nielsen, B S; Nieuwenhuizen, M; Nikolaenko, V; Niss, P; Nomerotski, A; Normand, Ainsley; Oberschulte-Beckmann, W; Obraztsov, V F; Olshevskii, A G; Onofre, A; Orava, Risto; Österberg, K; Ouraou, A; Paganini, P; Paganoni, M; Pagès, P; Palka, H; Papadopoulou, T D; Pape, L; Parkes, C; Parodi, F; Passeri, A; Pegoraro, M; Peralta, L; Pernegger, H; Pernicka, Manfred; Perrotta, A; Petridou, C; Petrolini, A; Phillips, H T; Piana, G; Pierre, F; Pimenta, M; Plaszczynski, S; Podobrin, O; Pol, M E; Polok, G; Poropat, P; Pozdnyakov, V; Prest, M; Privitera, P; Pukhaeva, N; Pullia, Antonio; Radojicic, D; Ragazzi, S; Rahmani, H; Rames, J; Ratoff, P N; Read, A L; Reale, M; Rebecchi, P; Redaelli, N G; Regler, Meinhard; Reid, D; Renton, P B; Resvanis, L K; Richard, F; Richardson, J; Rídky, J; Rinaudo, G; Ripp, I; Romero, A; Roncagliolo, I; Ronchese, P; Roos, L; Rosenberg, E I; Rosso, E; Roudeau, Patrick; Rovelli, T; Rückstuhl, W; Ruhlmann-Kleider, V; Ruiz, A; Rybicki, K; Saarikko, H; Sacquin, Yu; Sadovskii, A; Sajot, G; Salt, J; Sánchez, J; Sannino, M; Schneider, H; Schyns, M A E; Sciolla, G; Scuri, F; Sedykh, Yu; Segar, A M; Seitz, A; Sekulin, R L; Shellard, R C; Siccama, I; Siegrist, P; Simonetti, S; Simonetto, F; Sissakian, A N; Sitár, B; Skaali, T B; Smadja, G; Smirnov, N; Smirnova, O G; Smith, G R; Sosnowski, R; Souza-Santos, D; Spassoff, Tz; Spiriti, E; Sponholz, P; Squarcia, S; Stanescu, C; Stapnes, Steinar; Stavitski, I; Stepaniak, K; Stichelbaut, F; Stocchi, A; Strauss, J; Strub, R; Stugu, B; Szczekowski, M; Szeptycka, M; Tabarelli de Fatis, T; Tavernet, J P; Chikilev, O G; Tilquin, A; Timmermans, J; Tkatchev, L G; Todorov, T; Toet, D Z; Tomaradze, A G; Tomé, B; Tortora, L; Tranströmer, G; Treille, D; Trischuk, W; Tristram, G; Trombini, A; Troncon, C; Tsirou, A L; Turluer, M L; Tyapkin, I A; Tyndel, M; Tzamarias, S; Überschär, B; Ullaland, O; Uvarov, V; Valenti, G; Vallazza, E; Van der Velde, C; van Apeldoorn, G W; van Dam, P; Van Doninck, W K; Van Eldik, J; Vassilopoulos, N; Vegni, G; Ventura, L; Venus, W A; Verbeure, F; Verlato, M; Vertogradov, L S; Vilanova, D; Vincent, P; Vitale, L; Vlasov, E; Vodopyanov, A S; Vrba, V; Wahlen, H; Walck, C; Waldner, F; Weierstall, M; Weilhammer, Peter; Wetherell, Alan M; Wicke, D; Wickens, J H; Wielers, M; Wilkinson, G R; Williams, W S C; Winter, M; Witek, M; Woschnagg, K; Yip, K; Yushchenko, O P; Zach, F; Zacharatou-Jarlskog, C; Zalewska-Bak, A; Zalewski, Piotr; Zavrtanik, D; Zevgolatakos, E; Zimin, N I; Zito, M; Zontar, D; Zuberi, R; Zucchelli, G C; Zumerle, G

    1996-01-01

    The hadronic photon structure function F_{2}^{\\gamma} has been measured in the Q^{2} range from 4 to 30~GeV^2/c^{4} and down to x values of order 0.001, using data taken with the DELPHI detector at LEP between 1991 and 1993. A comparison is made with several F_{2}^{\\gamma} parameterizations with special emphasis on their low x behaviour. A result on the Q^{2} evolution of F_{2}^{\\gamma} is presented.

  16. Tests results and performance comparisons of coated and un-coated skutterudite based segmented unicouples

    International Nuclear Information System (INIS)

    El-Genk, Mohamed S.; Saber, Hamed H.; Caillat, Thierry; Sakamoto, Jeff

    2006-01-01

    Skutterudite based thermoelectric unicouples are being considered for use in Advanced Radioisotope Power Systems (ARPSs) to support NASA's planetary exploration missions. For these systems, which would be much lighter than state of the art Radioisotope Thermoelectric Generators (RTGs), it is important to ensure minimal degradation in the performance of unicouples that may be caused by material sublimation. In this work, two unicouples, JAN-04 with a thin metallic coating on the legs near the hot junction to suppress antimony sublimation and SEP-03 without coating, are tested for >1000 and 3600 h, respectively. The legs in the two unicouples are of almost the same dimensions and compositions; the p-legs are made of CeFe 3.5 Co 0.5 Sb 12 and Bi 0.4 Sb 1.6 Te 3 segments and the n-legs are made of CoSb 3 and Bi 2 Te 2.95 Se 0.05 segments. SEP-03 is tested at average hot and cold junction temperatures of 961.5 ± 22.0 and 296.3 ± 5.7 K, respectively, in argon gas at ∼0.068 MPa, and JAN-04 is tested at 962.8 ± 20.5 and 294.5 ± 3.3 K, respectively, initially in argon gas at the same pressure for ∼26.5 h then in vacuum ∼9.0 x 10 -7 Torr for >973.5 h. The measured open circuit voltage V oc (240 mV) and peak electrical power (1.64 W e ) for SEP-03 at the beginning of test (BOT) are higher than those for JAN-04 (188 mV and 0.84 W e , respectively). Although the argon gas effectively decreased the antimony loss from the legs of SEP-03, marked degradations in performance occurred. The estimated peak efficiency for SEP-03 decreased from 13.8% at BOT to 5.8% at end of test (EOT), and the peak power decreased from 1.64 W e at BOT to 0.48 W e at EOT, however, V oc decreased by ∼14%. The latter for JAN-04 decreased only by ∼3%, the estimated peak efficiency (∼12%) changed very little and the peak power decreased by ∼20%. Unlike SEP-03, the measured total and contact resistances of the legs in JAN-04 changed very little

  17. Fluoride removal from double four-membered ring (D4R) units in As-synthesized Ge-containing zeolites

    KAUST Repository

    Liu, Xiaolong

    2011-11-22

    Fluoride anions can be removed from the framework of as-prepared Ge-containing zeolites ITQ-13 and ITQ-17 without modification of the crystallinity and crystal habit. By contrast to all-silica ITQ-13 for which fluoride could not get out from D4R units, F is completely removed from Ge rich zeolites, even from D4R cages. This has been explained by the relaxing effect of germanium, making F less necessary for the stabilization of the small D4R units. Si/Ge ratios are similar in as-prepared and treated zeolites, indicating that the framework composition is not affected by the removal of anions. The fluoride-free zeolites possess XRD patterns similar to those of the as-made solids but their 29Si NMR spectra are significantly different, revealing the sensitivity of the method to the environment of silicon atoms in the framework. The extent of fluoride that can be removed from D4R units depends not only on the framework Ge content but also on the zeolite topology: for similar contents, F is much more easily eliminated from ITQ-17 than from ITQ-13. © 2011 American Chemical Society.

  18. Ge and As x-ray absorption fine structure spectroscopic study of homopolar bonding, chemical order, and topology in Ge-As-S chalcogenide glasses

    International Nuclear Information System (INIS)

    Sen, S.; Ponader, C.W.; Aitken, B.G.

    2001-01-01

    The coordination environments of Ge and As atoms in Ge x As y S 1-x-y glasses with x:y=1:2, 1:1, and 2.5:1 and with wide-ranging S contents have been studied with Ge and As K-edge x-ray absorption fine structure spectroscopy. The coordination numbers of Ge and As atoms are found to be 4 and 3, respectively, in all glasses. The first coordination shells of Ge and As atoms in the stoichiometric and S-excess glasses consist of S atoms only, implying the preservation of chemical order at least over the length scale of the first coordination shell. As-As homopolar bonds are found to appear at low and intermediate levels of S deficiency, whereas Ge-Ge bonds are formed only in strongly S-deficient glasses indicating clustering of metal atoms and violation of chemical order in S-deficient glasses. The composition-dependent variation in chemical order in chalcogenide glasses has been hypothesized to result in topological changes in the intermediate-range structural units. The role of such topological transitions in controlling the structure-property relationships in chalcogenide glasses is discussed

  19. Extreme IR absorption in group IV-SiGeSn core-shell nanowires

    Science.gov (United States)

    Attiaoui, Anis; Wirth, Stephan; Blanchard-Dionne, André-Pierre; Meunier, Michel; Hartmann, J. M.; Buca, Dan; Moutanabbir, Oussama

    2018-06-01

    Sn-containing Si and Ge (Ge1-y-xSixSny) alloys are an emerging family of semiconductors with the potential to impact group IV material-based devices. These semiconductors provide the ability to independently engineer both the lattice parameter and bandgap, which holds the premise to develop enhanced or novel photonic and electronic devices. With this perspective, we present detailed investigations of the influence of Ge1-y-xSixSny layers on the optical properties of Si and Ge based heterostructures and nanowires. We found that by adding a thin Ge1-y-xSixSny capping layer on Si or Ge greatly enhances light absorption especially in the near infrared range, leading to an increase in short-circuit current density. For the Ge1-y-xSixSny structure at thicknesses below 30 nm, a 14-fold increase in the short-circuit current is observed with respect to bare Si. This enhancement decreases by reducing the capping layer thickness. Conversely, decreasing the shell thickness was found to improve the short-circuit current in Si/Ge1-y-xSixSny and Ge/Ge1-y-xSixSny core/shell nanowires. The optical absorption becomes very important by increasing the Sn content. Moreover, by exploiting an optical antenna effect, these nanowires show extreme light absorption, reaching an enhancement factor, with respect to Si or Ge nanowires, on the order of 104 in Si/Ge0.84Si0.04Sn0.12 and 12 in Ge/Ge0.84Si0.04Sn0.12. Furthermore, we analyzed the optical response after the addition of a dielectric layer of Si3N4 to the Si/Ge1-y-xSixSny core-shell nanowire and found approximatively a 50% increase in the short-circuit current density for a dielectric layer of thickness equal to 45 nm and both a core radius and a shell thickness greater than 40 nm. The core-shell optical antenna benefits from a multiplication of enhancements contributed by leaky mode resonances in the semiconductor part and antireflection effects in the dielectric part.

  20. Pulsed laser deposition and thermoelectric properties of In-and Yb-doped CoSb3 skutterudite thin films

    KAUST Repository

    Sarath Kumar, S. R.

    2011-07-29

    In-and Yb-doped CoSb3 thin films were prepared by pulsed laser deposition. Process optimization studies revealed that a very narrow process window exists for the growth of single-phase skutterudite films. The electrical conductivity and Seebeck coefficient measured in the temperature range 300-700 K revealed an irreversible change on the first heating cycle in argon ambient, which is attributed to the enhanced surface roughness of the films or trace secondary phases. A power factor of 0.68 W m-1 K-1 was obtained at ∼700 K, which is nearly six times lower than that of bulk samples. This difference is attributed to grain boundary scattering that causes a drop in film conductivity. Copyright © Materials Research Society 2011.

  1. LArGe. A liquid argon scintillation veto for GERDA

    International Nuclear Information System (INIS)

    Heisel, Mark

    2011-01-01

    LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for possible applications in the GERDA experiment. GERDA searches for the neutrinoless double-beta decay in 76 Ge, by operating naked germanium detectors submersed into 65 m 3 of liquid argon. Similarly, LArGe runs Ge-detectors in 1 m 3 (1.4 tons) of liquid argon, which in addition is instrumented with photomultipliers to detect argon scintillation light. The light is used in anti-coincidence with the germanium detectors, to effectively suppress background events that deposit energy in the liquid argon. This work adresses the design, construction, and commissioning of LArGe. The background suppression efficiency has been studied in combination with a pulse shape discrimination (PSD) technique for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times 10 3 have been achieved. First background data of LArGe (without PSD) yield a background index of (0.12-4.6).10 -2 cts/(keV.kg.y) (90% c.l.), which is at the level of the Gerda phase I design goal. Furthermore, for the first time we measure the natural 42 Ar abundance (in parallel to Gerda), and have indication for the 2νββ-decay in natural germanium. (orig.)

  2. LArGe. A liquid argon scintillation veto for GERDA

    Energy Technology Data Exchange (ETDEWEB)

    Heisel, Mark

    2011-04-13

    LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for possible applications in the GERDA experiment. GERDA searches for the neutrinoless double-beta decay in {sup 76}Ge, by operating naked germanium detectors submersed into 65 m{sup 3} of liquid argon. Similarly, LArGe runs Ge-detectors in 1 m{sup 3} (1.4 tons) of liquid argon, which in addition is instrumented with photomultipliers to detect argon scintillation light. The light is used in anti-coincidence with the germanium detectors, to effectively suppress background events that deposit energy in the liquid argon. This work adresses the design, construction, and commissioning of LArGe. The background suppression efficiency has been studied in combination with a pulse shape discrimination (PSD) technique for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times 10{sup 3} have been achieved. First background data of LArGe (without PSD) yield a background index of (0.12-4.6).10{sup -2} cts/(keV.kg.y) (90% c.l.), which is at the level of the Gerda phase I design goal. Furthermore, for the first time we measure the natural {sup 42}Ar abundance (in parallel to Gerda), and have indication for the 2{nu}{beta}{beta}-decay in natural germanium. (orig.)

  3. Experimental study on the ionizing radiation field in absorbers irradiated by the 0.8 GeV and 1.2 GeV electrons

    International Nuclear Information System (INIS)

    Ambrosimov, V.K.; Kalmykov, N.N.; Kovalenko, G.D.

    1987-01-01

    The measurement results of spatial distribution of aluminium detector energy release and radioactivity in absorbers irradiated by 0.8 and 1.2 GeV electrons are given. Absorbers are made of aluminium, iron and lead, 30x30 cm size across the thickness is about 18 radiation length units. Thermoluminescence dosimeters LiF and radiochromium film dosimeters have been used to measure energy release. Induced activity of 18 F and 24 Na nuclides is determined in aluminium detectors. The experimental data are compared with the results of calculation carried out by the Monte-Carlo method

  4. JLab High Efficiency Klystron Baseline Design for 12 GeV Upgrade

    International Nuclear Information System (INIS)

    Hovater, J.; Delayen, Jean; Harwood, Leigh; Nelson, Richard; Wang, Haipeng

    2003-01-01

    A computer design of a 13.5 kW, 1497 MHz, CW type, 55% efficiency, 0.8 microPv beam perveance, ∼40 dB gain, 5-cavity klystron has been developed for JLab 12 GeV Upgrade project.The design uses TRICOMP codes to simulate the gun, mod-anode section, solenoid focus channel and beam dump. The klystron tube was designed by JPNDISK (1D) code initially and then optimized by MASK (2D) code for the baseline parameters. All of these codes have been bunch marked by JLab 5 kW operational klystrons. The details of design parameters and the simulations by MAFIA (3D) for the cavity couplings tuners, and window are also going to be presented.

  5. Spallation of {sup 197}Au with 4.4-GeV deuterons

    Energy Technology Data Exchange (ETDEWEB)

    Karapetyan, G.S. [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica; Balabekyan, A.R. [Yerevan State University (Armenia); Demekhina, N.A. [Yerevan Physics Institute, Alikhanyan Brothers 2, Yerevan (Armenia); Joint Institute for Nuclear Research (JINR), Flerov Laboratory of Nuclear Reactions (LNR), Dubna, Moscow (Russian Federation)

    2014-07-01

    A comprehensive set of 110 radioactive nuclide cross sections with mass numbers 22 ≤ A ≤ 198 amu in the interaction of 4.4-GeV deuterons with {sup 197}Au have been measured for the first time. The results including charge distributions have been parameterized in term of a 3-parameter equation in order to reproduces the isobaric distributions. Using data from the charge distributions, the total mass-yield distribution was obtained. The new experimental data of the recoil properties of reaction products were also obtained. Kinematical characteristics of the reaction products obtained from measurements of the residuals emitted in the forward and backward directions exhibit different behavior depending on the mass region. The kinematical features of reaction products have been analyzed on the basis of the two-step model of high-energy nuclear reactions and discussed in terms of the different reaction mechanisms. (author)

  6. Insights on the origin of the Tb_5Ge_4 magnetocaloric effect

    International Nuclear Information System (INIS)

    Belo, J.H.; Barbosa, M.B.; Pires, A.L.; Costa, R.M.; Teixeira, J.G.V.; Silva, J.; Algarabel, P.A.; Magen, C.; Morellon, L.; Amaral, J.S.

    2017-01-01

    In this report the magnetic, atomic structures and spin-lattice coupling have been thoroughly studied through high magnetic field magnetometry, Synchrotron X-ray diffraction under applied magnetic field and magnetostriction measurements in the Tb_5Ge_4 compounds. A field induced phase transition from an antiferromagnetic towards a ferromagnetic ordering was confirmed but with absence of structural transformation. This absence has been confirmed experimentally through synchrotron x-ray diffraction under applied field (up to 30 T). Moreover, this absence was explained via a thermodynamic free energy model: first principles calculations determined a large energy gap (ΔE=0.65 eV) between the two possible structures, O(I) and O(II). From magnetic and structural properties, a H-T phase diagram has been proposed for Tb_5Ge_4. Finally it was observed a large magnetostriction (up to 600 ppm) induced by ∆H=7 T.

  7. Orientation correlation and intermolecular structure of GeCl4, VCl4 and other tetrachloride liquids

    International Nuclear Information System (INIS)

    Nath, P.P.; Sarkar, S.; Joarder, R.N.

    2007-01-01

    The intermolecular structure and correlation of GeCl 4 , VCl 4 and other tetrachloride liquids can be well described by Misawa's orientation correlation model originally applied to liquid CCl 4 . The model supports on average a specific 'corner' to 'face' correlation, but evidently very different from 'Apollo' type model. The Misawa model appears to work, in some respect, even better than reference interaction site model (RISM) used for long to describe intermolecular structure of such molecular systems. The test and comparison are made through the calculation of small asymmetric part of the intermolecular structure and evaluation of partial atom-atom distribution functions

  8. Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.

    Science.gov (United States)

    Rouifed, Mohamed Said; Chaisakul, Papichaya; Marris-Morini, Delphine; Frigerio, Jacopo; Isella, Giovanni; Chrastina, Daniel; Edmond, Samson; Le Roux, Xavier; Coudevylle, Jean-René; Vivien, Laurent

    2012-10-01

    Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.

  9. Structural and electronic response of U{sub 3}Fe{sub 4}Ge{sub 4} to high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Henriques, M. S., E-mail: henriques@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); CCTN, IST/CFMCUL, University of Lisbon, Nuclear and Technological Campus, P-2695-066 Bobadela (Portugal); Gorbunov, D. I.; Andreev, A. V.; Arnold, Z. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); Prchal, J.; Havela, L. [Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague (Czech Republic); Raison, P.; Heathman, S.; Griveau, J.-C.; Colineau, E. [European Commission, Joint Research Centre, Institute for Transuranium Elements, Postfach 2340, 76125 Karlsruhe (Germany); Gonçalves, A. P. [CCTN, IST/CFMCUL, University of Lisbon, Nuclear and Technological Campus, P-2695-066 Bobadela (Portugal)

    2015-03-21

    Structural, magnetic, and electrical properties have been studied on a U{sub 3}Fe{sub 4}Ge{sub 4} single crystal under hydrostatic pressure. The orthorhombic crystal structure is found to be stable up to 30 GPa, the highest applied pressure, but the compressibility is strongly anisotropic. Contrary to typical uranium intermetallics for which the softest lattice direction is along the shortest inter-uranium links, in U{sub 3}Fe{sub 4}Ge{sub 4} the lattice is compressed most in a perpendicular direction for the high pressure range. The elastic properties are modified considerably in the vicinity of 1 GPa when the b axis is transformed from least compressible to most compressible. The bulk modulus is found to be about 150 GPa. The anomalies in the elastic properties are reflected in the electronic properties that consistently indicate a change of the magnetic ground state from ferromagnetic to antiferromagnetic. Both types of order exhibit a gap in the magnon spectrum; however, it is twice as high for the ferromagnetic state. The magnetoresistance reveals field-induced transitions of different origins in the antiferromagnetic state along the easy and hard magnetization directions.

  10. Local charge trapping in Ge nanoclustersdetected by Kelvin probe force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kondratenko, S.V., E-mail: kondr@univ.kiev.ua [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Lysenko, V.S. [Institute of Semiconductor Physics, 41 Prospect Nauki, 03028, Kyiv (Ukraine); Kozyrev, Yu. N. [O.O. Chuiko Institute of Surface Chemistry, 17 GeneralaNaumova Str. 03164, Kiev (Ukraine); Kratzer, M. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Storozhuk, D.P.; Iliash, S.A. [Taras Shevchenko National University of Kyiv, 64/13 Volodymyrska Str., 01601, Kyiv (Ukraine); Czibula, C. [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria); Teichert, C., E-mail: teichert@unileoben.ac.at [Institute of Physics, MontanuniversitätLeoben, Franz Josef Str. 18, A-8700, Leoben (Austria)

    2016-12-15

    The understanding of local charge trapping on the nanoscale is crucial for the design of novel electronic devices and photodetectors based on SiGe nanoclusters (NCs). Here, the local spatial distribution of the surface potential of the Ge NCs was detected using Kelvin probe force microscopy (KPFM). Different surface potentials between Ge NCs and the wetting layer (WL) surface were detected at room temperature. Changes of the local contact potential differences (CPD) were studied after injection of electrons or holes into single Ge NCs on top of the Si layer using a conductive atomic force microscopy tip. The CPD image contrast was increased after electron injection by applying a forward bias to the n-tip/i-Ge NC/p-Si junction. Injecting holes into a single Ge NC was also accompanied by filling of two-dimensional states in the surrounding region, which is governed by leakage currents through WL or surface states and Coulomb charging effects. A long retention time of holes trapped by the Ge NC was found.

  11. Search for the Y via e(+)e(-) -> gamma phi J/psi at root s=4.23, 4.26 and 4.36 GeV

    NARCIS (Netherlands)

    Ablikim, M.; Achasov, M. N.; Ai, X. C.; Albayrak, O.; Albrecht, M.; Ambrose, D. J.; Amoroso, A.; An, F. F.; An, Q.; Bai, J. Z.; Ferroli, R. Baldini; Ban, Y.; Bennett, D. W.; Bennett, J. V.; Bertani, M.; Bettoni, D.; Bian, J. M.; Bianchi, F.; Boger, E.; Bondarenko, O.; Boyko, I.; Briere, R. A.; Cai, H.; Cai, X.; Cakir, O.; Calcaterra, A.; Cao, G. F.; Cetin, S. A.; Chang, J. F.; Chelkov, G.; Chen, G.; Chen, H. S.; Chen, H. Y.; Chen, J. C.; Chen, M. L.; Chen, S. J.; Chen, X.; Chen, X. R.; Chen, Y. B.; Cheng, H. P.; Chu, X. K.; Cibinetto, G.; Cronin-Hennessy, D.; Dai, H. L.; Dai, J. P.; Dbeyssi, A.; Dedovich, D.; Deng, Z. Y.; Denig, A.; Denysenko, I.; Destefanis, M.; De Mori, F.; Ding, Y.; Dong, C.; Dong, J.; Dong, L. Y.; Dong, M. Y.; Du, S. X.; Duan, P. F.; Fan, J. Z.; Fang, J.; Fang, S. S.; Fang, X.; Fang, Y.; Fava, L.; Feldbauer, F.; Felici, G.; Feng, C. Q.; Fioravanti, E.; Fritsch, M.; Fu, C. D.; Gao, Q.; Gao, Y.; Garzia, I.; Goetzen, K.; Gong, W. X.; Gradl, W.; Greco, M.; Gu, M. H.; Gu, Y. T.; Guan, Y. H.; Guo, A. Q.; Guo, L. B.; Guo, T.; Guo, Y.; Guo, Y. P.; Haddadi, Z.; Hafner, A.; Han, S.; Han, Y. L.; Harris, F. A.; He, K. L.; He, Z. Y.; Held, T.; Heng, Y. K.; Hou, Z. L.; Hu, C.; Hu, H. M.; Hu, J. F.; Hu, T.; Hu, Y.; Huang, G. M.; Huang, G. S.; Huang, H. P.; Huang, J. S.; Huang, X. T.; Huang, Y.; Hussain, T.; Ji, Q.; Ji, Q. P.; Ji, X. B.; Ji, X. L.; Jiang, L. L.; Jiang, L. W.; Jiang, X. S.; Jiao, J. B.; Jiao, Z.; Jin, D. P.; Jin, S.; Johansson, T.; Julin, A.; Kalantar-Nayestanaki, N.; Kang, X. L.; Kang, X. S.; Kavatsyuk, M.; Ke, B. C.; Kliemt, R.; Kloss, B.; Kolcu, O. B.; Kopf, B.; Kornicer, M.; Kuehn, W.; Kupsc, A.; Lai, W.; Lange, J. S.; Lara, M.; Larin, P.; Li, C. H.; Li, Cheng; Li, D. M.; Li, F.; Li, G.; Li, H. B.; Li, J. C.; Li, Jin; Li, K.; Li, K.; Li, P. R.; Li, T.; Li, W. D.; Li, W. G.; Li, X. L.; Li, X. M.; Li, X. N.; Li, X. Q.; Li, Z. B.; Liang, H.; Liang, Y. F.; Liang, Y. T.; Liao, G. R.; Lin, D. X.; Liu, B. J.; Liu, C. L.; Liu, C. X.; Liu, F. H.; Liu, Fang; Liu, Feng; Liu, H. B.; Liu, H. H.; Liu, H. H.; Liu, H. M.; Liu, J.; Liu, J. P.; Liu, J. Y.; Liu, K.; Liu, K. Y.; Liu, L. D.; Liu, P. L.; Liu, Q.; Liu, S. B.; Liu, X.; Liu, X. X.; Liu, Y. B.; Liu, Z. A.; Liu, Zhiqiang; Liu, Zhiqing; Loehner, H.; Lou, X. C.; Lu, H. J.; Lu, J. G.; Lu, R. Q.; Lu, Y.; Lu, Y. P.; Luo, C. L.; Luo, M. X.; Luo, T.; Luo, X. L.; Lv, M.; Lyu, X. R.; Ma, F. C.; Ma, H. L.; Ma, L. L.; Ma, Q. M.; Ma, S.; Ma, T.; Ma, X. N.; Ma, X. Y.; Maas, F. E.; Maggiora, M.; Malik, Q. A.; Mao, Y. J.; Mao, Z. P.; Marcello, S.; Messchendorp, J. G.; Min, J.; Min, T. J.; Mitchell, R. E.; Mo, X. H.; Mo, Y. J.; Morales, C. Morales; Moriya, K.; Muchnoi, N. Yu.; Muramatsu, H.; Nefedov, Y.; Nerling, F.; Nikolaev, I. B.; Ning, Z.; Nisar, S.; Niu, S. L.; Niu, X. Y.; Olsen, S. L.; Ouyang, Q.; Pacetti, S.; Patteri, P.; Pelizaeus, M.; Peng, H. P.; Peters, K.; Ping, J. L.; Ping, R. G.; Poling, R.; Pu, Y. N.; Qi, M.; Qian, S.; Qiao, C. F.; Qin, L. Q.; Qin, N.; Qin, X. S.; Qin, Y.; Qin, Z. H.; Qiu, J. F.; Rashid, K. H.; Redmer, C. F.; Ren, H. L.; Ripka, M.; Rong, G.; Ruan, X. D.; Santoro, V.; Sarantsev, A.; Savrie, M.; Schoenning, K.; Schumann, S.; Shan, W.; Shao, M.; Shen, C. P.; Shen, P. X.; Shen, X. Y.; Sheng, H. Y.; Shepherd, M. R.; Song, W. M.; Song, X. Y.; Sosio, S.; Spataro, S.; Spruck, B.; Sun, G. X.; Sun, J. F.; Sun, S. S.; Sun, Y. J.; Sun, Y. Z.; Sun, Z. J.; Sun, Z. T.; Tang, C. J.; Tang, X.; Tapan, I.; Thorndike, E. H.; Tiemens, M.; Toth, D.; Ullrich, M.; Uman, I.; Varner, G. S.; Wang, B.; Wang, B. L.; Wang, D.; Wang, D. Y.; Wang, K.; Wang, L. L.; Wang, L. S.; Wang, M.; Wang, P.; Wang, P. L.; Wang, Q. J.; Wang, S. G.; Wang, W.; Wang, X. F.; Wang, Y. D.; Wang, Y. F.; Wang, Y. Q.; Wang, Z.; Wang, Z. G.; Wang, Z. H.; Wang, Z. Y.; Weber, T.; Wei, D. H.; Wei, J. B.; Weidenkaff, P.; Wen, S. P.; Wiedner, U.; Wolke, M.; Wu, L. H.; Wu, Z.; Xia, L. G.; Xia, Y.; Xiao, D.; Xiao, Z. J.; Xie, Y. G.; Xu, G. F.; Xu, L.; Xu, Q. J.; Xu, Q. N.; Xu, X. P.; Yan, L.; Yan, W. B.; Yan, W. C.; Yan, Y. H.; Yang, H. X.; Yang, L.; Yang, Y.; Yang, Y. X.; Ye, H.; Ye, M.; Ye, M. H.; Yin, J. H.; Yu, B. X.; Yu, C. X.; Yu, H. W.; Yu, J. S.; Yuan, C. Z.; Yuan, W. L.; Yuan, Y.; Yuncu, A.; Zafar, A. A.; Zallo, A.; Zeng, Y.; Zhang, B. X.; Zhang, B. Y.; Zhang, C.; Zhang, C. C.; Zhang, D. H.; Zhang, H. H.; Zhang, H. Y.; Zhang, J. J.; Zhang, J. L.; Zhang, J. Q.; Zhang, J. W.; Zhang, J. Y.; Zhang, J. Z.; Zhang, K.; Zhang, L.; Zhang, S. H.; Zhang, X. J.; Zhang, X. Y.; Zhang, Y.; Zhang, Y. H.; Zhang, Z. H.; Zhang, Z. P.; Zhang, Z. Y.; Zhao, G.; Zhao, J. W.; Zhao, J. Y.; Zhao, J. Z.; Zhao, Lei; Zhao, Ling; Zhao, M. G.; Zhao, Q.; Zhao, Q. W.; Zhao, S. J.; Zhao, T. C.; Zhao, Y. B.; Zhao, Z. G.; Zhemchugov, A.; Zheng, B.; Zheng, J. P.; Zheng, W. J.; Zheng, Y. H.; Zhong, B.; Zhou, L.; Zhou, Li; Zhou, X.; Zhou, X. K.; Zhou, X. R.; Zhou, X. Y.; Zhu, K.; Zhu, K. J.; Zhu, S.; Zhu, X. L.; Zhu, Y. C.; Zhu, Y. S.; Zhu, Z. A.; Zhuang, J.; Zou, B. S.; Zou, J. H.

    2015-01-01

    Using data samples collected at center-of-mass energies root s = 4.23, 4.26, and 4.36 GeV with the BESIII detector operating at the BEPCII storage ring, we search for the production of the charmoniumlike state Y(4140) through a radiative transition followed by its decay to phi J/psi. No significant

  12. Ferromagnetic ordering in ThSi{sub 2} type CeAu{sub 0.28}Ge{sub 1.72}

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, C. Peter, E-mail: s-peter@northwestern.ed [Department of Chemistry, Northwestern University, 2145 N. Sheridan Road, Evanston, IL 60208-3113 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.ed [Department of Chemistry, Northwestern University, 2145 N. Sheridan Road, Evanston, IL 60208-3113 (United States)

    2010-04-15

    The compound CeAu{sub 0.28}Ge{sub 1.72} crystallizes in the ThSi{sub 2} structure type in the tetragonal space group I4{sub 1}/amd with lattice parameters a=b=4.2415(6) A c=14.640(3) A. CeAu{sub 0.28}Ge{sub 1.72} is a polar intermetallic compound having a three-dimensional Ge/Au polyanion sub-network filled with Ce atoms. The magnetic susceptibility data show Curie-Weiss law behavior above 50 K. The compound orders ferromagnetically at {approx}8 K with estimated magnetic moment of 2.48 mu{sub B}/Ce. The ferromagnetic ordering is confirmed by the heat capacity data which show a rise at {approx}8 K. The electronic specific heat coefficient (gamma) value obtained from the paramagnetic temperature range 15-25 K is {approx}124(5) mJ/ mol K{sup 2}. The entropy change due to the ferromagnetic transition is {approx}4.2 J/mol K which is appreciably reduced compared to the value of R ln(2) expected for a crystal-field-split doublet ground state and/or Kondo exchange interactions. - Graphical abstract: CeAu{sub 0.28}Ge{sub 1.72} crystallizes in the ThSi{sub 2} structure type in the tetragonal space group I4{sub 1}/amd and orders ferromagnetically at {approx}8 K.

  13. Mechanisms of alpha emitter production in 12C induced reactions at 1 GeV

    International Nuclear Information System (INIS)

    Dufour, J.P.; Delagrange, H.; Del Moral, R.

    1982-01-01

    We present cross sections, mean projected recoil ranges and angular distributions of radioactive alpha emitters produced in 12 C-induced reactions at 1 GeV on targets ranging from Gd to Pb. We use a new technique of on-line electrostatic collection. The wide spectrum of produced isotopes corresponds to nuclei close to the target up to nuclei with as much as 60 nucleons less than the target. The intranuclear cascade calculations can reproduce the main features of nuclei having lost up

  14. P-barp and pp elastic scattering from 10 GeV to 1000 GeV centre-of-mass energy

    International Nuclear Information System (INIS)

    Islam, M.M.; Fearnley, T.; Guillaud, J.P.

    1984-01-01

    Antiproton-proton and proton-proton elastic scattering are studied simultaneously over the energy range √s approx. (10-1000) GeV in a nucleon valence core model proposed earlier. The scattering is described as primarily due to two processes: diffraction and hard scattering. The latter originates from the scattering of a nucleon core off another core. Destructive interference between the two processes produces dips in p-barp and pp differential cross-sections. As energy increases beyond the ISR range (√s = (23-62) GeV), the dips get filled up, and eventually transform into shoulders or breaks at collider energies. Differences between p-barp and pp differential cross-sections persist even at collider energies. Comparison with ISR data shows that the model provides a quantitative description of pp elastic scattering in this energy range. Predictions of p-barp and pp differential cross-sections at future collider energies √s = 800 and 2000 GeV are given. In order to distinguish between competing models, need for measuring the p-barp differential cross-section at the ISR and SPS collider in the abs (t)-range (0.5-2.0) (GeV) 2 is stressed

  15. anti pp and pp elastic scattering from 10 GeV to 1000 GeV centre-of-mass energy

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M.M. (Connecticut Univ., Storrs (USA). Dept. of Physics); Fearnley, T. (University Coll., London (UK). Dept. of Physics and Astronomy); Guillaud, J.P. (Grenoble-1 Univ., 74 - Annecy (France). Lab. de Physique des Particules)

    1984-06-21

    Antiproton-proton and proton-proton elastic scattering are studied simultaneously over the energy range ..sqrt..anti s approx.= (10/1000) GeV in a nucleon valence core model proposed earlier. The scattering is described as primarily due to two processes: diffraction and hard scattering. The latter originates from the scattering of a nucleon core off another core. Destructive interference between the two processes produces dips in anti pp and pp differential cross-sections. As energy increases beyond the ISR range (..sqrt..anti s = (23/62) GeV), the dips get filled up, and eventually transform into shoulders or breaks at collider energies. Differences between anti pp and pp differential cross-sections persist even at collider energies. Comparison with ISR data shows that the model provides a quantitative description of pp elastic scattering in this energy range. Predictions of anti pp and pp differential cross-sections at future collider energies ..sqrt..s = 800 and 2000 GeV are given. In order to distinguish between competing models, need for measuring the anti pp differential cross-section at the ISR and SPS collider in the vertical stroketvertical stroke-range (0.5/2.0) (GeV)/sup 2/ is stressed.

  16. P-barp and pp elastic scattering from 10 GeV to 1000 GeV centre-of-mass energy

    Energy Technology Data Exchange (ETDEWEB)

    Islam, M.M. (Connecticut Univ., Storrs (USA). Dept. of Physics); Fearnley, T. (University Coll., London (UK). Dept. of Physics and Astronomy); Guillaud, J.P. (L.A.P.P. - BP909, 74019 Annecy-Le-Vieux Cedex, France)

    1984-06-21

    Antiproton-proton and proton-proton elastic scattering are studied simultaneously over the energy range ..sqrt..s approx. (10-1000) GeV in a nucleon valence core model proposed earlier. The scattering is described as primarily due to two processes: diffraction and hard scattering. The latter originates from the scattering of a nucleon core off another core. Destructive interference between the two processes produces dips in p-barp and pp differential cross-sections. As energy increases beyond the ISR range (..sqrt..s = (23-62) GeV), the dips get filled up, and eventually transform into shoulders or breaks at collider energies. Differences between p-barp and pp differential cross-sections persist even at collider energies. Comparison with ISR data shows that the model provides a quantitative description of pp elastic scattering in this energy range. Predictions of p-barp and pp differential cross-sections at future collider energies ..sqrt..s = 800 and 2000 GeV are given. In order to distinguish between competing models, need for measuring the p-barp differential cross-section at the ISR and SPS collider in the abs (t)-range (0.5-2.0) (GeV)/sup 2/ is stressed.

  17. Elastic scattering of intermediate energy protons on 4He and 12C

    International Nuclear Information System (INIS)

    Khan, Z.A.

    1981-01-01

    The elastic angular distribution and polarization of approx. equal to 1 GeV protons on 4 He and 12 C have been analysed using the recently proposed correlation expansion for the Glauber amplitude by retaining terms up to three-body density only. The calculations include Coulomb and spin effects. Using realistic form factors for target nuclei it is found that we need to consider only up to the second-order density term to provide a satisfactory explanation of both kinds of experimental data in the available momentum transfer region. The contribution of the three-body density term is only marginal except in 4 He differential cross-section in the cm angular range 45 0 0 . (orig.)

  18. Predicting yield-stress anomalies in L12 alloys: Ni3Ge-Fe3Ge pseudo-binaries

    International Nuclear Information System (INIS)

    Liu, J.B.; Johnson, D.D.; Smirnov, A.V.

    2005-01-01

    The L1 2 -based pseudo-binary (Ni 1-c Fe c ) 3 Ge is an ideal system to study yield-strength anomaly and its origin as it has a solid-solution phase vs. c and Ni 3 Ge exhibits an anomaly while Fe 3 Ge does not. Using two ab initio electronic-structure techniques, we calculate the planar-fault energies on the γ-surface, i.e., antiphase boundaries (APB) and stacking faults, both complex and superlattice intrinsic (SISF), for (Ni 1-c Fe c ) 3 Ge as a function of c. Generally, we use the fault energies combined with elasticity theory to predict occurrence/loss of the yield-strength anomaly and show that the loss of anomaly occurs due to APB(1 1 1)-to-SISF(1 1 1) instability. Assessing the stability of APB(1 1 1) on the γ-surface within linear elasticity theory, we predict the transition from anomalous to normal temperature dependence of yield strength for c ∼≥ 0.35 (or 26 at.% Fe), as is observed, after which type-II, rather than type-I, dissociation is energetically favorable. Hence, first-principles calculations can predict reliably the existence/loss of anomalous yield-strength. Finally, we show that (0 0 1) and (1 1 1) APB energies of the binaries and pseudo-binaries agree quantitatively with measured values when chemical antisite disorder, intrinsic to the samples characterized, is included, whereas they are too large by a factor of two in perfect L1 2 . We investigate three types of disorder: thermal and off-stoichiometric antisites, as well as chemical disorder vs. Fe-content in pseudo-binaries

  19. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  20. Microscopic parameters of heterostructures containing nanoclusters and thin layers of Ge in Si matrix

    CERN Document Server

    Erenburg, S B; Stepina, N P; Nikiforov, A I; Nenashev, A V; Mazalov, L N

    2001-01-01

    GeK XAFS measurements have been performed using the total electron yield detection mode for pseudomorphous Ge films deposited on Si(0 0 1) substrate via molecular beam epitaxy at 300 deg. C. The samples have been produced by thrice repeating the growing procedure separated by deposition of blocking Si layers at 500 deg. C. The local microstructure parameters (interatomic distances, Ge coordination numbers) are linked to nanostructure morphology and adequate models are suggested and discussed. It was established that pseudomorphous 4-monolayer Ge films contain 50% of Si atoms on the average. Pyramid-like, pure Ge islands formed in the Stranski-Krastanov growth are characterized by the interatomic Ge-Ge distances of 2.41 A (by 0.04 A less than in bulk Ge) and the Ge-Si distances of 2.37 A. It was revealed that the pure Ge nanoclusters are covered by a 1-2-monolayer film with admixture on the average of a 50% Si atom impurity from blocking Si layers.

  1. Enhanced low-level LSC performance for carbon-14 dating using a bismuth germanate (Bi4Ge3O12) quasi-active guard

    International Nuclear Information System (INIS)

    Cook, G.T.

    1995-01-01

    The Packard 2770TR/SL is a novel low-level liquid scintillation spectrometer which employs bismuth germanate (BGO - Bi 4 Ge 3 O 12 ) as a quasi-active guard to reduce background count rates and improve limits of detection. The results of this study indicate that this system shows tremendous potential for radiocarbon dating. Its great advantage is that it can give exceptional performance using standard low 40 K borosilicate glass vials costing only a few cents each. For example, in an optimized counting window, 4.6-mL 14 C benzene contained in a standard 7-mL glass vial produced a background count rate of 0.49 cpm and an efficiency of 70.3%, yielding a figure of merit (E 2 V 2 /B) value of 213,000 ±9,000 (where B = background count rate in counts per minute [cpm], E = percentage efficiency, and V = volume of benzene). This performance is comparable to published data for low-level instruments which employ active coincidence guard detectors and standard glass vials. When the same vials were recounted in vial holders, specially fabricated from BGO, the corresponding optimum values for background, efficiency and figure of merit, respectively, were 0.24 cpm, 61.0% and 328,000 ± 19,000. This performance is comparable to that of other low-level counting instruments when they are used in combination with specialized Teflon and silica vials. The BGO vial holders were also used in previous generations of Packard instruments which employ time resolved liquid scintillation counting (TR-LSC) for electronic background reduction and this resulted in significant improvements in performance

  2. Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

    International Nuclear Information System (INIS)

    Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

    2008-01-01

    Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

  3. Study on neutron interactions with protons and carbon nuclei at p=4.2 GeV/c

    International Nuclear Information System (INIS)

    Bekmirzaev, R.N.; Muminov, M.M.; Sultanov, M.U.; Grishina, O.V.; Dolejsi, J.; Tas, P.; Trka, Z.

    1988-01-01

    The production of neutrons with p=4.2 GeV/c in d(C 3 H 8 ) collisions and their interaction with proton and carbon nuclei are studied. The experimental material has been obtained using the 2m propane bubble chamber irradiated by deuterons with p=4.2 GeV/c per nucleon at the Dubna synchrophasotron, JINR. The data on multiplicity and momentum characteristics of secondary particles in np and nC interactions compared with the calculations on the LUND model are obtained

  4. Thermoelectric property of fine-grained CoSb3 skutterudite compound fabricated by mechanical alloying and spark plasma sintering

    International Nuclear Information System (INIS)

    Liu Weishu; Zhang Boping; Li Jingfeng; Zhao Lidong

    2007-01-01

    Skutterudite CoSb 3 polycrystalline materials were prepared using a combined process of mechanical alloying (MA) and spark plasma sintering (SPS). The influence of SPS temperature on the thermoelectric properties was focused in this work with a special emphasis on the analysis of the size effects of grains. The average grain sizes decreased from 300 to 50 nm with decreasing SPS temperatures from 600 to 300 deg. C. The electrical resistivities of samples spark plasma sintered at 300-600 deg. C all decreased with increasing temperature, indicating a classic intrinsic conduction behaviour of semiconductors. The samples spark plasma sintered at 300-500 deg. C showed a positive Seebeck coefficient while the sample spark plasma sintered at 600 deg. C showed a negative Seebeck coefficient. The room-temperature thermal conductivities were reduced from 4.30 to 2.92 W m -1 K -1 as the grain sizes were decreased from 300 to 100 nm corresponding to SPS at 600 and 400 deg. C, respectively. The present work indicates that MA and SPS is a good combination for fabricating fine-grained CoSb 3 thermoelectric materials

  5. Backward rho /sup -/ production in the reaction pi /sup -/p to p pi /sup -/ pi /sup 0/ at 9 GeV/c and 12 GeV/c

    CERN Document Server

    Benkheiri, P; D'Almagne, B; De Rosny, G; Eisenstein, B I; Ferrer, A; Fleury, P; Jacholkowski, A; Petroff, P; Richard, F; Rivet, P; Roudeau, P; Rougé, A; Six, J; Thénard, J M; Treille, D; Volte, A; Yoshida, H

    1977-01-01

    The backward production of mesons is studied in the reaction pi /sup - /p to p rho /sup -/. The differential cross section and the rho /sup - / density matrix are obtained using a Monte Carlo analysis of high statistics CERN experimental data on pi /sup -/p to p pi /sup -/ pi /sup 0/ reactions at 9 and 12 GeV/c. (10 refs).

  6. Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Guangyang Lin

    2016-09-01

    Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

  7. Molecular beam electric deflection of the tetrahalides CF4, CCl4, SiF4, SiCl4, GeCl4, TiF4, TiCl4, VF4, and VCl4

    International Nuclear Information System (INIS)

    Muenter, A.A.; Dyke, T.R.; Falconer, W.E.; Klemperer, W.

    1975-01-01

    Using molecular beam electric deflection, the temperature dependence of polar behavior has been studied for the molecules CF 4 , CCl 4 , SiF 4 , SiCl 4 , GeCl 4 , TiF 4 TiCl 4 , VF 4 , VF 4 , and VCl 4 . A number of these molecules show polar behavior consistent with a vibrationally induced dipole moment for states with one or both of the triply degenerate vibrations excited. In four of the tetrachloride species, the presence of a vibrationally induced dipole moment was confirmed by the change in polar behavior with isotopic substituion of the Cl atoms. The deflection behavior of the transition metal tetrahalides varied from nonpolar in VCl 4 to very polar in TiF 4

  8. Event display of a 4-muon candidate in the ATLAS detector

    CERN Multimedia

    ATLAS, Collaboration

    2012-01-01

    Event display of a 4mu candidate. EventNumber: 71902630 RunNumber: 204769 m_4l=125.1 GeV. m_12=86.3 GeV, m_34=31.6 GeV. mu_1: pt=36.1 GeV, eta=1.29, phi=1.33. mu_2: pt=47.5 GeV, eta=0.69, phi=-1.65. mu_3: pt=26.4 GeV, eta=0.47, phi=-2.51. mu_4: pt=71.7 GeV, eta=1.85, phi=1.65.

  9. Lattice parameters values and phase diagram for the Cu2Zn1-zFezGeSe4 alloy system

    International Nuclear Information System (INIS)

    Caldera, D.; Quintero, M.; Morocoima, M.; Quintero, E.; Grima, P.; Marchan, N.; Moreno, E.; Bocaranda, P.; Delgado, G.E.; Mora, A.E.; Briceno, J.M.; Fernandez, J.L.

    2008-01-01

    X-ray powder diffraction and differential thermal analysis (DTA) measurements were made on polycrystalline samples of the Cu 2 Zn 1-z Fe z GeSe 4 alloy system. The diffraction patterns were used to show the equilibrium conditions and to estimate crystalline parameter values. It was found that, at room temperature, a single phase solid solution with the tetragonal stannite α structure (I4-bar2m) occurs across the whole composition range. The DTA thermograms were used to construct the phase diagram of the Cu 2 Zn 1-z Fe z GeSe 4 alloy system. It was confirmed that the Cu 2 ZnGeSe 4 compound melts incongruently. It was observed that undercooling effects occur for samples with z > 0.9

  10. Centrality Dependence of Charged Hadron Transverse Momentum Spectra in Au+Au Collisions from √(sNN)=62.4 to 200 GeV

    Science.gov (United States)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Chai, Z.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Halliwell, C.; Hamblen, J.; Hauer, M.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Seals, H.; Sedykh, I.; Smith, C. E.; Stankiewicz, M. A.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Vaurynovich, S. S.; Verdier, R.; Veres, G. I.; Wenger, E.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wysłouch, B.

    2005-03-01

    We have measured transverse momentum distributions of charged hadrons produced in Au+Au collisions at √(sNN)=62.4 GeV. The spectra are presented for transverse momenta 0.254.5 GeV/c, in a pseudorapidity range of 0.2<η<1.4. The nuclear modification factor RAA is calculated relative to p+p data at the same collision energy as a function of collision centrality. For 24.5 GeV/c, RAA is found to be significantly larger than in Au+Au collisions at √(sNN)= 130 and 200 GeV. In contrast to the large change in RAA, we observe a very similar centrality evolution of the pT spectra at √(sNN)=62.4 and 200 GeV. The dynamical origin of this surprising factorization of energy and centrality dependence of particle production in heavy-ion collisions remains to be understood.

  11. Synthesis of graphitized carbon, nanodiamond and graphene supported Li_4Ti_5O_1_2 and comparison of their electrochemical performance as anodes for lithium ion batteries

    International Nuclear Information System (INIS)

    Yang, Shuai; Miao, Juan; Wang, Qiufen; Lu, Mengwei; Sun, Jiufang; Wen, Tao

    2016-01-01

    Highlights: • We synthesized graphitized carbon, nanodiamond and graphene supported Li_4Ti_5O_1_2, respectively. • The order of the capacities is LTO/GE > LTO/GC > LTO > LTO/ND after 500 cycles. • The rate capabilities and cycling stabilities are in the order of LTO/GE > LTO/ND > LTO/GC > LTO. - Abstract: Graphitized carbon (GC), nanodiamond (ND) and graphene (GE) supported Li_4Ti_5O_1_2 (LTO) composites have been synthesized via a solid-state reaction, respectively. The particle sizes of LTO/GC, LTO/ND and LTO/GE are smaller than pure LTO. When tested as the anode for lithium ion batteries, the discharge capacities of LTO, LTO/GC, LTO/ND and LTO/GE composites are 100.1 mAh g"−"1, 150.4 mAh g"−"1, 90.4 mAh g"−"1 and 218.3 mAh g"−"1 at the current density of 175 mA g"−"1 after 500 cycles. Their rate capacities retain 59.8%, 80.0%, 81.0% and 85.7% at the current density of 175 mA g"−"1, 438 mA g"−"1, 875 mA g"−"1 and 175 mA g"−"1, respectively. Moreover, the recovery rates of their rate capacities are 78.6%, 83.4%, 88.9% and 90.1% when returned to the current density of 175 mA g"−"1, respectively. The reasons can be attributed to the synergistic effect between GC (ND and GE) and LTO as well as the features of the different carbon supports. This strategy, with the carbon constituting a good supporting structure, is an effective way to improve the cycling performance of anode materials for lithium ion batteries.

  12. Influence of Li10GeP2S12-type solid electrolyte on cell thermodynamics

    Directory of Open Access Journals (Sweden)

    Jishnu Bhattacharya

    2016-06-01

    Full Text Available We elucidate few critical facts about the lithium superionic conductor (Li10GeP2S12 and few other compounds of the same family as the electrolyte in Li-ion cells. The dimensionality of diffusion process and existence of ‘structural’ lithiums are not well understood in this material. From the ab-initio MD simulations, we find that the material transport Li-ions predominantly in the crystallographic c-direction. Nevertheless, the cross-channel diffusion is significant as well. We explored the mobility of individual Li-ions and do not find evidence that supports the proposition of structural Li-ions in LGPS. We find nominal effect of local Ge-P ordering and of Li-concentration change on diffusivity, which not only provides information about the invariance of diffusivity at different conditions of operation, but also ensures that identification of the ground state structure in LGPS having partially occupied Li and Ge/P sublattices should have minimal effect on the diffusion analysis. We computed the dilute Li insertion and extraction voltages for LGPS from ab-initio total energy calculation. The dilute voltages indicate that the material is prone to react by exchanging Li-ions with the electrodes at typical operating range of voltages indicating formation of some interphase at the electrode-electrolyte interface, which necessitates further experimental investigation

  13. Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

    Science.gov (United States)

    Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

    2016-04-01

    In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

  14. Cross channel isospin amplitude analysis of the reaction pN→NNπ at 19 GeV/c

    International Nuclear Information System (INIS)

    Bakken, V.; Gennow, H.; Hansen, J.D.; Lundborg, P.; Maekelae, J.; Pimiae, M.; Sellden, B.; Skjevling, G.; Sundell, E.

    1976-10-01

    The reaction N 1 N 2 →N 3 (N 4 π) is analysed in terms of three isospin amplitudes Msub(I)sup(Isub(x)) where Isub(x) and I are the isospin of the exchanged particle and the N 4 π combination respectively. The amplitudes are studied as functions of the momentum transfer to and the mass of the N 4 π system. The M 0 sub(1/2) amplitude exhibits the characteristics of diffraction dissociation with a broad low mass enhancement centered around 1.35 GeV. The dsigma/dt' distribution of M 0 sub(1/2) shows a clear break around 0.2 (GeV/c) 2 for masses smaller than 1.36 GeV. For higher masses the break disappears and the slope of the forward peak becomes smaller. The interference between M 0 sub(1/2) and M 1 sub(1/2) is zero for small values of t' and becomes large in magnitude and negative for larger t' values. The other interference terms are consistent with being zero. The hypothesis of factorization is tested for the M 0 sub(1/2) amplitude by comparison with the corresponding amplitude of π +- N reactions. The agreement is excellent over the whole mass range. (Auth.)

  15. Spontaneous electric polarization in the B-site magnetic spinel GeCu2O4

    Science.gov (United States)

    Yanda, Premakumar; Ghara, Somnath; Sundaresan, A.

    2018-04-01

    We report the observation of a spontaneous electric polarization at the antiferromagnetic ordering temperature (TN ∼ 33 K) of Cu2+ ions in the B-site magnetic spinel GeCu2O4, synthesized at high pressure and high temperature. This compound is known to crystallize in a tetragonal structure (space group I41/amd) due to Jahn-Teller distortion of Cu2+ ions and exhibit a collinear up-up-down-down (↑↑↓↓) antiferromagnetic spin configuration below TN. We found a clear dielectric anomaly at TN, where an electric polarization appears in the absence of applied magnetic field. The electric polarization is suppressed by applied magnetic fields, which demonstrates that the compound GeCu2O4 is a type-II multiferroic.

  16. Handling of high intensity proton beams at 12 GeV

    International Nuclear Information System (INIS)

    Takasaki, M.; Minakawa, M.; Yamanoi, Y.; Ieiri, M.; Kato, Y.; Ishii, H.; Suzuki, Y.; Suzuki, T.; Tanaka, K.H.

    1990-01-01

    A new counter experimental hall is now being constructed at the KEK (National Laboratory for High Energy Physics, Japan) 12 GeV Proton Synchrotron (KEK-PS). This hall will be completed by the end of 1989, immediately followed by magnet installation. The present report describes the new technical achievements employed at the hall. The most important and essential feature of the equipment is that the beam-handling system is maintenance-free, though in case of need, maintenance should be carried out quickly from a distant location in order to reduce the absorbed dose during the maintenance work. This paper is divided into three parts. The first part outlines the general design concept of the hall, focusing on the handling of high-intensity beams. The second part addresses the development of a quick-disconnect system, focusing on electric power, interlock signals, cooling water, pumping port, and vacuum flange. The third part describes the development of radiation-resistant instruments, focusing on polyimide magnets and cement magnets. (N.K.)

  17. Syntheses, structural variants and characterization of AInM′S{sub 4} (A=alkali metals, Tl; M′ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS{sub 4} and KInSnS{sub 4} compounds

    Energy Technology Data Exchange (ETDEWEB)

    Yohannan, Jinu P.; Vidyasagar, Kanamaluru, E-mail: kvsagar@iitm.ac.in

    2016-06-15

    Ten AInM′S{sub 4} (A=alkali metals, Tl; M′= Ge, Sn) compounds with diverse structure types have been synthesized and characterized by single crystal and powder X-ray diffraction and a variety of spectroscopic methods. They are wide band gap semiconductors. KInGeS{sub 4}(1-β), RbInGeS{sub 4}(2), CsInGeS{sub 4}(3-β), TlInGeS{sub 4}(4-β), RbInSnS{sub 4}(8-β) and CsInSnS{sub 4}(9) compounds with three-dimensional BaGa{sub 2}S{sub 4} structure and CsInGeS{sub 4}(3-α) and TlInGeS{sub 4}(4-α) compounds with a layered TlInSiS{sub 4} structure have tetrahedral [InM′S{sub 4}]{sup −} frameworks. On the other hand, LiInSnS{sub 4}(5) with spinel structure and NaInSnS{sub 4}(6), KInSnS{sub 4}(7), RbInSnS{sub 4}(8-α) and TlInSnS{sub 4}(10) compounds with layered structure have octahedral [InM′S{sub 4}]{sup −} frameworks. NaInSnS{sub 4}(6) and KInSnS{sub 4}(7) compounds undergo facile topotactic ion-exchange, at room temperature, with various mono-, di- and tri-valent cations in aqueous medium to give rise to metastable layered phases. - Graphical abstract: NaInSnS{sub 4} and KInSnS{sub 4} compounds undergo, in aqueous medium at room temperature, facile topotactic ion-exchange with mono, di and trivalent cations. Display Omitted - Highlights: • Ten AInM′S{sub 4} compounds with diverse structure types were synthesized. • They are wide band gap semiconductors. • NaInSnS{sub 4} and KInSnS{sub 4} compounds undergo facile topotactic ion-exchange at room temperature.

  18. Solvothermal synthesis of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanophosphor in water/diethylene glycol system

    Energy Technology Data Exchange (ETDEWEB)

    Takeshita, Satoru; Honda, Joji [Department of Applied Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); Isobe, Tetsuhiko, E-mail: isobe@applc.keio.ac.jp [Department of Applied Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan); Sawayama, Tomohiro; Niikura, Seiji [SINLOIHI Company, Limited, 2-19-12 Dai, Kamakura 247-8550 (Japan)

    2012-05-15

    The influence of aging of the suspension containing the amorphous precusors on structural, compositional and photoluminescent properties is studied to understand the mechanism on the formation of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanoparticles during the solvothermal reaction in the water/diethylene glycol mixed solvent. Aging at 200 Degree-Sign C for 20 min forms the crystalline Zn{sub 2}GeO{sub 4} nanorods and then they grow up to {approx} 50 nm in mean length after aging for 240 min. Their interplanar spacing of (410) increases with increasing the aging time. The photoluminescence intensity corresponding to the d-d transition of Mn{sup 2+} increases with increasing the aging time up to 120 min, and then decreases after aging for 240 min. The photoluminescence lifetime decreases with increasing the aging time, indicating the locally concentrated Mn{sup 2+} ions. These results reveal that Mn{sup 2+} ions gradually replace Zn{sup 2+} ions near surface through repeating dissolusion and precipitation processes during prolonged aging after the complete crystallization of Zn{sub 2}GeO{sub 4}. - Graphical abstract: TEM images of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanoparticles aged at 200 Degree-Sign C for different aging times in the mixed solvent of water and diethylene glycol. Highlights: Black-Right-Pointing-Pointer Mechanism on formation of Zn{sub 2}GeO{sub 4}:Mn{sup 2+} nanophosphor under solvothermal condition. Black-Right-Pointing-Pointer Zn{sub 2}GeO{sub 4} nanorods crystallize via amorphous precursors. Black-Right-Pointing-Pointer Gradual substitution of Mn{sup 2+} during prolonged aging. Black-Right-Pointing-Pointer Such an inhomogeneous Mn{sup 2+} doping process results in concentration quenching.

  19. Synthesis and Characterization of the Quaternary Thio-aluminogermanates A(AlS2)(GeS2) (A = Na, K)

    KAUST Repository

    Al-Bloushi, Mohammed; Davaasuren, Bambar; Emwas, Abdul-Hamid M.; Rothenberger, Alexander

    2015-01-01

    The quaternary thioaluminogermanates Na(AlS2)(GeS2) (1) and K(AlS2)(GeS2) (2) crystallize in the tetragonal space group I4/mcm (no. 140) with unit cell parameters a = 7.4274(11) Å, c = 5.8560(12) Å for Na(AlS2)(GeS2) and a = 7.8826(2) Å, c = 5

  20. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  1. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  2. Analysis of elastic and inelastic α12C data (Esub(α)=1.37 GeV) with a multiple diffraction model

    International Nuclear Information System (INIS)

    Alexander, Y.; Rinat, S.

    1976-01-01

    High-energy inelastic α 12 C distributions are analyzed with an eikonalized DWIA. Using an elastic phase function parametrized to fit the elastic α 12 C distribution and further inelastic form factors from electron scattering data, we obtained reasonable agreement for the 2 + and O + ' contributions. The anomalous absence of a predicted diffraction minimum in the 3 - and also the 1 GeV p 12 C data are observed and discussed. (B.G.)

  3. Growth and structure of Si and Ge in vanadium oxide nanomesh on Pd(1 1 1) studied by STM and DFT

    International Nuclear Information System (INIS)

    Chan, Lap Hong; Hayazaki, Shinji; Ogawa, Kokushi; Yuhara, Junji

    2013-01-01

    Highlights: ► We studied the growth and structure of Si and Ge in vanadium oxide nanomesh on Pd(1 1 1) by STM and DFT calculations. ► All the Si atoms formed isolated Si nanoclusters. ► Some Ge atoms formed monomer Ge nanodots on Pd(1 1 1), while the others formed isolated Ge nanoclusters. - Abstract: The growth of silicon (Si)/germanium (Ge) atoms in a well ordered (4 × 4) vanadium (V) oxide nanomesh on Pd(1 1 1) prepared by ultra-high-vacuum evaporation has been studied by scanning tunneling microscopy (STM) and ab initio density functional theory (DFT) calculations. At the very beginning of the Si deposition, all of the Si atoms deposited were adsorbed on top of the V-oxide nanomesh, forming Si nanoclusters, and each Si atom formed was isolated other Si atoms. Two different adsorption sites for Si atoms were observed by STM. In the case of Ge deposition, some Ge atoms filled the vanadium oxide nanoholes, forming Ge nanodots on Pd(1 1 1), while the others were adsorbed on top of the V-oxide nanomesh, forming isolated Ge nanoclusters. The ab initio DFT total-energy calculations indicated that the Ge atoms occupying the nanohole were more stable than those adsorbed on the nanomesh. The simulated images were highly consistent with the experimental STM images with the exception of the Ge nanodots, which exhibited a large, uniform protrusion in the STM images. Therefore, the adsorbed atom might be mobile in the nanohole at room temperature, possibly as a result of interaction with the STM tip.

  4. Acceleration of Polarized Protons up to 3.4 GeV/c in the Nuclotron at JINR

    Science.gov (United States)

    Kovalenko, A. D.; Butenko, A. V.; Mikhaylov, V. A.; Kondratenko, M. A.; Kondratenko, A. M.; Filatov, Yu N.

    2017-12-01

    To preserve proton polarization in the Nuclotron up to 13.5 GeV/c, it is enough to use a partial solenoid snake with maximal field integral of 25 Tm that allows one to eliminate crossings of the most dangerous intrinsic and integer spin resonances. The insertion of weak field integral is sufficient to preserve the proton polarization up to 3.4 GeV/c. This momentum corresponds to the first intrinsic resonance. To preserve polarization during crossings of five integer spin resonances, it is possible to choose crossing rates that correspond to either the fast or the slow resonance crossings. Another possibility is a deliberate increasing of the resonance strength. To eliminate depolarization during protons injection into the Nuclotron, a scheme of matching of the polarization with a vertical direction is presented. During the run in February-March 2017, the three measurements of the proton polarization at kinetic energies of 0.5 GeV, 1 GeV and 2 GeV were made that allow one to obtain the integer spin resonances strengths.

  5. Recirculating Beam Breakup Study for the 12 GeV Upgrade at Jefferson Lab

    International Nuclear Information System (INIS)

    Shin, Ilkyoung; Satogata, Todd; Ahmed, Shahid; Bogacz, Slawomir; Stirbet, Mircea; Wang, Haipeng; Wang, Yan; Yunn, Byung; Bodenstein, Ryan

    2012-01-01

    Two new high gradient C100 cryomodules with a total of 16 new cavities were installed at the end of the CEBAF south linac during the 2011 summer shutdown as part of the 12-GeV upgrade project at Jefferson Lab. We surveyed the higher order modes (HOMs) of these cavities in the Jefferson Lab cryomodule test facility and CEBAF tunnel. We then studied recirculating beam breakup (BBU) in November 2011 to evaluate CEBAF low energy performance, measure transport optics, and evaluate BBU thresholds due to these HOMs. This paper discusses the experiment setup, cavity measurements, machine setup, optics measurements, and lower bounds on BBU thresholds by new cryomodules.

  6. Recirculating Beam Breakup Study for the 12 GeV Upgrade at Jefferson Lab

    Energy Technology Data Exchange (ETDEWEB)

    Ilkyoung Shin, Todd Satogata, Shahid Ahmed, Slawomir Bogacz, Mircea Stirbet, Haipeng Wang, Yan Wang, Byung Yunn, Ryan Bodenstein

    2012-07-01

    Two new high gradient C100 cryomodules with a total of 16 new cavities were installed at the end of the CEBAF south linac during the 2011 summer shutdown as part of the 12-GeV upgrade project at Jefferson Lab. We surveyed the higher order modes (HOMs) of these cavities in the Jefferson Lab cryomodule test facility and CEBAF tunnel. We then studied recirculating beam breakup (BBU) in November 2011 to evaluate CEBAF low energy performance, measure transport optics, and evaluate BBU thresholds due to these HOMs. This paper discusses the experiment setup, cavity measurements, machine setup, optics measurements, and lower bounds on BBU thresholds by new cryomodules.

  7. Processing and characterization of a carbon black-filled electrically conductive Nylon-12 nanocomposite produced by selective laser sintering

    International Nuclear Information System (INIS)

    Athreya, Siddharth Ram; Kalaitzidou, Kyriaki; Das, Suman

    2010-01-01

    Selective laser sintering (SLS), a layered manufacturing technique was explored to process an electrically conductive polymer nanocomposite made of Nylon-12 reinforced with 4 wt% of carbon black. SLS process parameters were optimized in order to maximize the flexural modulus. The porosity and morphology were studied using optical microscopy and scanning electron microscopy (SEM). The crystalline state was characterized using differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The electrical conductivity was determined using the four probe technique. Results indicate that carbon black-filled Nylon-12 nanocomposites can be successfully made by SLS. Maximum flexural modulus values of 1750 MPa and 1450 MPa were achieved for the neat polymer and the nanocomposite, respectively. A reduction in the flexural modulus of the nanocomposite is likely due to the formation of a segregated structure in the nanocomposite and a weak polymer-filler interface. The optimized neat polymer and the nanocomposites had average densities of around 97% and 96% relative to full density, respectively. The electrical conductivity of the nanocomposite was approximately 1 x 10 -4 S/cm, which is five orders of magnitude higher than that of the neat polymer processed by SLS, and indicates that the onset of percolation behavior occurs below the 4 wt% loading of carbon black.

  8. Evidence for e+e- →γχc1,2 at center-of-mass energies from 4.009 to 4.360 GeV

    Science.gov (United States)

    Ablikim, M.; N. Achasov, M.; Ai, X. C.; Albayrak, O.; Albrecht, M.; J. Ambrose, D.; Amoroso, A.; An, F. F.; An, Q.; Bai, J. Z.; R. Baldini, Ferroli; Ban, Y.; W. Bennett, D.; V. Bennett, J.; Bertani, M.; Bettoni, D.; Bian, J. M.; Bianchi, F.; Boger, E.; Bondarenko, O.; Boyko, I.; A. Briere, R.; Cai, H.; Cai, X.; Cakir, O.; Calcaterra, A.; Cao, G. F.; A. Cetin, S.; Chang, J. F.; Chelkov, G.; Chen, G.; Chen, H. S.; Chen, H. Y.; Chen, J. C.; Chen, M. L.; Chen, S. J.; Chen, X.; Chen, X. R.; Chen, Y. B.; Cheng, H. P.; Chu, X. K.; Cibinetto, G.; Cronin-Hennessy, D.; Dai, H. L.; Dai, J. P.; Dbeyssi, A.; Dedovich, D.; Deng, Z. Y.; Denig, A.; Denysenko, I.; Destefanis, M.; F. De, Mori; Ding, Y.; Dong, C.; Dong, J.; Dong, L. Y.; Dong, M. Y.; Du, S. X.; Duan, P. F.; Fan, J. Z.; Fang, J.; Fang, S. S.; Fang, X.; Fang, Y.; Fava, L.; Feldbauer, F.; Felici, G.; Feng, C. Q.; Fioravanti, E.; Fritsch, M.; Fu, C. D.; Gao, Q.; Gao, Y.; Gao, Z.; Garzia, I.; Goetzen, K.; Gong, W. X.; Gradl, W.; Greco, M.; Gu, M. H.; Gu, Y. T.; Guan, Y. H.; Guo, A. Q.; Guo, L. B.; Guo, T.; Guo, Y.; P. Guo, Y.; Haddadi, Z.; Hafner, A.; Han, S.; Han, Y. L.; A. Harris, F.; He, K. L.; He, Z. Y.; Held, T.; Heng, Y. K.; Hou, Z. L.; Hu, C.; Hu, H. M.; Hu, J. F.; Hu, T.; Hu, Y.; Huang, G. M.; Huang, G. S.; Huang, H. P.; Huang, J. S.; Huang, X. T.; Huang, Y.; Hussain, T.; Ji, Q.; Ji, Q. P.; Ji, X. B.; Ji, X. L.; Jiang, L. L.; Jiang, L. W.; Jiang, X. S.; Jiao, J. B.; Jiao, Z.; Jin, D. P.; Jin, S.; Johansson, T.; Julin, A.; Kalantar-Nayestanaki, N.; Kang, X. L.; Kang, X. S.; Kavatsyuk, M.; C. Ke, B.; Kliemt, R.; Kloss, B.; B. Kolcu, O.; Kopf, B.; Kornicer, M.; Kuehn, W.; Kupsc, A.; Lai, W.; S. Lange, J.; M., Lara; Larin, P.; Li, C. H.; Li, Cheng; Li, D. M.; Li, F.; Li, G.; Li, H. B.; Li, J. C.; Li, Jin; Li, K.; Li, K.; Li, P. R.; Li, T.; Li, W. D.; Li, W. G.; Li, X. L.; Li, X. M.; Li, X. N.; Li, X. Q.; Li, Z. B.; Liang, H.; Liang, Y. F.; Liang, Y. T.; Liao, G. R.; X. Lin(Lin, D.; Liu, B. J.; L. Liu, C.; Liu, C. X.; Liu, F. H.; Liu, Fang; Liu, Feng; Liu, H. B.; Liu, H. H.; Liu, H. H.; Liu, H. M.; Liu, J.; Liu, J. P.; Liu, J. Y.; Liu, K.; Liu, K. Y.; Liu, L. D.; Liu, P. L.; Liu, Q.; Liu, S. B.; Liu, X.; Liu, X. X.; Liu, Y. B.; Liu, Z. A.; Liu, Zhiqiang; Zhiqing, Liu; Loehner, H.; Lou, X. C.; Lu, H. J.; Lu, J. G.; Lu, R. Q.; Lu, Y.; Lu, Y. P.; Luo, C. L.; Luo, M. X.; Luo, T.; Luo, X. L.; Lv, M.; Lyu, X. R.; Ma, F. C.; Ma, H. L.; Ma, L. L.; Ma, Q. M.; Ma, S.; Ma, T.; Ma, X. N.; Ma, X. Y.; E. Maas, F.; Maggiora, M.; A. Malik, Q.; Mao, Y. J.; Mao, Z. P.; Marcello, S.; G. Messchendorp, J.; Min, J.; Min, T. J.; E. Mitchell, R.; Mo, X. H.; Mo, Y. J.; C. Morales, Morales; Moriya, K.; Yu. Muchnoi, N.; Muramatsu, H.; Nefedov, Y.; Nerling, F.; B. Nikolaev, I.; Ning, Z.; Nisar, S.; Niu, S. L.; Niu, X. Y.; Olsen, S. L.; Ouyang, Q.; Pacetti, S.; Patteri, P.; Pelizaeus, M.; Peng, H. P.; Peters, K.; Ping, J. L.; Ping, R. G.; Poling, R.; Pu, Y. N.; Qi, M.; Qian, S.; Qiao, C. F.; Qin, L. Q.; Qin, N.; Qin, X. S.; Qin, Y.; Qin, Z. H.; Qiu, J. F.; H. Rashid, K.; F. Redmer, C.; Ren, H. L.; Ripka, M.; Rong, G.; Ruan, X. D.; Santoro, V.; Sarantsev, A.; Savrié, M.; Schoenning, K.; Schumann, S.; Shan, W.; Shao, M.; Shen, C. P.; Shen, P. X.; Shen, X. Y.; Sheng, H. Y.; R. Shepherd, M.; Song, W. M.; Song, X. Y.; Sosio, S.; Spataro, S.; Spruck, B.; Sun, G. X.; Sun, J. F.; Sun, S. S.; Sun, Y. J.; Sun, Y. Z.; Sun, Z. J.; Sun, Z. T.; Tang, C. J.; Tang, X.; Tapan, I.; H. Thorndike, E.; Tiemens, M.; Toth, D.; Ullrich, M.; Uman, I.; S. Varner, G.; Wang, B.; Wang, B. L.; Wang, D.; Wang, D. Y.; Wang, K.; Wang, L. L.; Wang, L. S.; Wang, M.; Wang, P.; Wang, P. L.; Wang, Q. J.; Wang, S. G.; Wang, W.; Wang, X. F.; D. Wang(Yadi, Y.; Wang, Y. F.; Wang, Y. Q.; Wang, Z.; Wang, Z. G.; Wang, Z. H.; Wang, Z. Y.; Weber, T.; Wei, D. H.; Wei, J. B.; Weidenkaff, P.; Wen, S. P.; Wiedner, U.; Wolke, M.; Wu, L. H.; Wu, Z.; Xia, L. G.; Xia, Y.; Xiao, D.; Xiao, Z. J.; Xie, Y. G.; Xu, G. F.; Xu, L.; Xu, Q. J.; Xu, Q. N.; Xu, X. P.; Yan, L.; Yan, W. B.; Yan, W. C.; Yan, Y. H.; Yang, H. X.; Yang, L.; Yang, Y.; Yang, Y. X.; Ye, H.; Ye, M.; Ye, M. H.; Yin, J. H.; Yu, B. X.; Yu, C. X.; Yu, H. W.; Yu, J. S.; Yuan, C. Z.; Yuan, W. L.; Yuan, Y.; Yuncu, A.; A. Zafar, A.; Zallo, A.; Zeng, Y.; Zhang, B. X.; Zhang, B. Y.; Zhang, C.; Zhang, C. C.; Zhang, D. H.; Zhang, H. H.; Zhang, H. Y.; Zhang, J. J.; Zhang, J. L.; Zhang, J. Q.; Zhang, J. W.; Zhang, J. Y.; Zhang, J. Z.; Zhang, K.; Zhang, L.; Zhang, S. H.; Zhang, X. Y.; Zhang, Y.; Zhang, Y. H.; Zhang, Y. T.; Zhang, Z. H.; Zhang, Z. P.; Zhang, Z. Y.; Zhao, G.; Zhao, J. W.; Zhao, J. Y.; Zhao, J. Z.; Zhao, Lei; Zhao, Ling; Zhao, M. G.; Zhao, Q.; Zhao, Q. W.; Zhao, S. J.; Zhao, T. C.; Zhao, Y. B.; Zhao, Z. G.; Zhemchugov, A.; Zheng, B.; Zheng, J. P.; Zheng, W. J.; Zheng, Y. H.; Zhong, B.; Zhou, L.; Zhou, Li; Zhou, X.; Zhou, X. K.; Zhou, X. R.; Zhou, X. Y.; Zhu, K.; Zhu, K. J.; Zhu, S.; Zhu, X. L.; Zhu, Y. C.; Zhu, Y. S.; Zhu, Z. A.; Zhuang, J.; Zou, B. S.; Zou, J. H.; BESIII Collaboration

    2015-04-01

    Using data samples collected at center-of-mass energies of √s = 4.009, 4.230, 4.260, and 4.360 GeV with the BESIII detector operating at the BEPCII collider, we perform a search for the process e+e- → γχcJ (J=0, 1, 2) and find evidence for e+e- → γχc1 and e+e- → γχc2 with statistical significances of 3.0σ and 3.4σ, respectively. The Born cross sections σB(e+e- → γχcJ), as well as their upper limits at the 90% confidence level (C.L.) are determined at each center-of-mass energy. Supported by National Key Basic Research Program of China (2015CB856700), Joint Funds of National Natural Science Foundation of China (11079008, 11179007, U1232201, U1332201, U1232107), National Natural Science Foundation of China (NSFC) (10935007, 11121092, 11125525, 11235011, 11322544, 11335008), Chinese Academy of Sciences (CAS) Large-Scale Scientific Facility Program, CAS (KJCX2-YW-N29, KJCX2-YW-N45), 100 Talents Program of CAS, INPAC and Shanghai Key Laboratory for Particle Physics and Cosmology; German Research Foundation DFG (Collaborative Research Center CRC-1044), Istituto Nazionale di Fisica Nucleare, Italy, Ministry of Development of Turkey (DPT2006K-120470), Russian Foundation for Basic Research (14-07-91152), U. S. Department of Energy (DE-FG02-04ER41291, DE-FG02-05ER41374, DE-FG02-94ER40823, DESC0010118), U.S. National Science Foundation, University of Groningen (RuG) and Helmholtzzentrum fuer Schwerionenforschung GmbH (GSI), Darmstadt, WCU Program of National Research Foundation of Korea (R32-2008-000-10155-0)

  9. Preparation of special purity Ge - S - I and Ge - Se - I glasses

    Science.gov (United States)

    Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Kotereva, T. V.; Snopatin, G. E.; Churbanov, M. F.

    2017-05-01

    The paper considers the new approaches for the production of special pure Ge - S - I and Ge - Se - I glasses via the germanium(IV) iodide, germanium(II) sulfide, as well as the Ge2S3, Ge2S3I2 and Ge2Se3I2 glassy alloys. The glass samples containing 0.03-0.17 ppm(wt) hydrogen impurity in the form of SH-group, 0.04-0.15 ppm(wt) hydrogen impurity in the form of SeH-group, and 0.5-7.8 ppm(wt) oxygen impurity in the form of Ge-O were produced. Using a crucible technique, the single-index [GeSe4]95I5 glass fibers of 300-400 μm diameter were drawn. The minimum optical losses in the best fiber were 1.7 dB/m at a wavelength of 5.5 μm; the background optical losses were within 2-3 dB/m in the spectral range of 2.5-8 μm.

  10. Dissociative multiple photoionization of SiBr4 and GeBr4 in the VUV and X-ray regions: a comparative study of inner-shell processes involving Si(2p, 2s), Ge(3d, 3p, 3s), and Br(3d, 3p, 3s)

    International Nuclear Information System (INIS)

    Boo, Bong Hyun; Saito, Norio

    2003-01-01

    Dissociative multiple photoionization of MBr 4 (M=Si, Ge) in the Si(2p, 2s), Ge(3d, 3s, 3p), and Br(3d, 3p, 3s) inner-shell regions has been studied by using time-of-flight (TOF) mass spectrometry coupled to synchrotron radiation in the ranges of 50∼944 eV for SiBr 4 and 50∼467 eV for GeBr 4 . Total photoion and photoion-photoion coincidence (PIPICO) yields have been measured as functions of the photon energy. Here, giant shape resonances have been observed beyond the thresholds of the 3d shells owing to the Br(3d 10 )→Br(3d 9 -f) excitation, showing the similar patterns for both of the systems. The ranges and the intensities of the shape resonances are found to be tremendously broad and enhanced, respectively, by the tetrahedral arrangement of the bromine ligands. In addition to the giant resonances, we have observed discrete features corresponding to the Br(3d), Si(2p), and Si(2s) in SiBr 4 and to the Br(3d), Ge(3p), and Ge(3s) in GeBr 4 . The dissociation processes of multiply charged parent ions have also been evaluated from the variations of photoelectron-photoion coincidence (PEPICO) and PIPICO yields with the photon energy. Over the entire energies examined, most efficient PIPICO channels involve Br + -Br + , Br + -MBr + , and M + -Br + (M=Si, Ge), the formation of which indicates that the total destruction of the molecules is a dominant process in the dissociative photoionization of the molecules

  11. Gd5(SixGe1−x)4 system – updated phase diagram

    International Nuclear Information System (INIS)

    Melikhov, Yevgen; Hadimani, R.L.; Raghunathan, Arun

    2015-01-01

    Gd 5 (Si x Ge 1−x ) 4 for 0.41Ge 1−x ) 4 for 0.41Ge 1−x ) 4 for 0.41

  12. Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

    International Nuclear Information System (INIS)

    Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

    2006-01-01

    Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

  13. A Higgs boson candidate decaying into 4 muons in the ATLAS detector

    CERN Multimedia

    ATLAS Collaboration

    2012-01-01

    Event display of a 4mu candidate. EventNumber: 71902630 RunNumber: 204769 m4ell=125.1 GeV. m12=86.3 GeV, m34=31.6 GeV. mu1: pT,eta,phi=36.1 GeV, 1.29, 1.33 . mu2: pT,eta,phi=47.5 GeV, 0.69, -1.65 . mu3: pT,eta,phi=26.4 GeV, 0.47, -2.51 . mu4: pT,eta,phi=71.7 GeV, 1.85, 1.65 . pT4ell= 27.0 GeV. ETmiss=41.8 GeV. (ATLAS-CONF-2012-169)

  14. Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

    International Nuclear Information System (INIS)

    Lu Wei-Fang; Li Cheng; Huang Shi-Hao; Lin Guang-Yang; Wang Chen; Yan Guang-Ming; Huang Wei; Lai Hong-Kai; Chen Song-Yan

    2013-01-01

    Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal—oxide—semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si 3 N 4 or SiO 2 for improving their tensile strain and simulate the strain profiles by using the finite difference time domain (FDTD) method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si 3 N 4 is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Investigations of the R5(SixGe1-x)4 Intermetallic Compounds by X-Ray Resonant Magnetic Scattering

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Lizhi [Iowa State Univ., Ames, IA (United States)

    2008-08-18

    The XRMS experiment on the Gd5Ge4 system has shown that, below the Neel temperature, TN = 127 K, the magnetic unit cells is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are aligned along the c-axis and the c-components of the magnetic moments at the three different sites are equal. The ferromagnetic slabs are stacked antiferromagnetically along the b-direction. They found an unusual order parameter curve in Gd5Ge4. A spin-reorientation transition is a possibility in Gd5Ge4, which is similar to the Tb5Ge4 case. Tb5Ge4 possesses the same Sm5Ge4-type crystallographic structure and the same magnetic space group as Gd5Ge4 does. The difference in magnetic structure is that Tb5Ge4 has a canted one but Gd5Ge4 has nearly a collinear one in the low temperature antiferromagnetic phase. The competition between the magneto-crystalline anisotropy and the nearest-neighbor magnetic exchange interactions may allow a 3-dimensional canted antiferromagnetic structure in Tb5Ge4. The spin-reorientation transition in both Gd5Ge4 and Tb5Ge4 may arise from the competition between the magnetic anisotropy from the spin-orbit coupling of the conduction electrons and the dipolar interactions anisotropy.

  16. Linear microstructural features in R{sub 5}(Si,Ge){sub 4}-type alloys: Difficulties in identification

    Energy Technology Data Exchange (ETDEWEB)

    Chumbley, L.S. [Iowa State University, 214 Wilhelm, Ames, IA 50011 (United States); Ames Laboratory, 126 Metals Development, Ames, IA 50011 (United States)], E-mail: chumbley@iastate.edu; Ugurlu, O. [Los Alamos National Laboratory, Mail stop G755, Los Alamos, NM 87544 (United States); McCallum, R.W.; Dennis, K.W.; Mudryk, Y. [Ames Laboratory, 126 Metals Development, Ames, IA 50011 (United States); Gschneidner, K.A.; Pecharsky, V.K. [Iowa State University, 214 Wilhelm, Ames, IA 50011 (United States); Ames Laboratory, 126 Metals Development, Ames, IA 50011 (United States)

    2008-02-15

    A brief review of the current literature concerning compounds based upon the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} structure reveals that essentially all examined alloys contain 'linear features' similar to those first observed by Szade et al. on the surface of Gd{sub 5}Si{sub 4}, Gd{sub 5}Si{sub 2}Ge{sub 2} and Gd{sub 5}Ge{sub 4} samples. Attempts to characterize these features, using a variety of techniques, have proven to be a difficult task. Rather than becoming clearer and better understood, discrepancies in the reported data have resulted in much confusion. A series of comprehensive experiments involving optical, scanning and transmission electron microscopy, X-ray diffractometry, magnetization, and heat capacity measurements have been performed in an attempt to clarify the situation. These experiments, coupled with a critical examination of published data, allow certain misconceptions and apparent contradictions to be understood and explained. Of major importance is the discovery that the volume fraction of the linear feature present is far lower than what one may estimate on the basis of etched samples. The results of this study support previous data that show the linear features are a second phase of composition R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 3}, and reveal the various difficulties associated with proper identification of this phase due to its small size scale and low volume percentage.

  17. ω production in the reaction π-p → π+π-π0 n at 8 and 12 GeV/c

    International Nuclear Information System (INIS)

    Dowell, J.D.; Garvey, J.; Jobes, M.; Kenyon, I.R.; Mawson, J.; McMahon, T.; Corbett, I.F.; Dagan, S.; Esterling, R.J.; Jane, M.R.; Lipman, N.H.; Litchfield, P.J.; Sumorok, K.C.T.O.; Bellamy, E.H.; Green, M.G.; Lister, J.B.; Lister, J.R.; March, P.V.; Robertson, A.R.; Stacey, B.J.; Strong, J.A.; Thomas, D.H.

    1975-12-01

    The reaction of π - p → ω n has been studied at 8 and 12 GeV/c incident momenta with the CERN Omega spectrometer using a neutron time of flight trigger. The differential cross sections and the ω decay density matrix elements are presented as functions of the momentum transfer squared (-t) in the range 0.02 to 0.80 GeV 2 . The data are used to evaluate the intercept and slope of both the natural and unnatural parity exchange trajectories. Regge exchange amplitude factorisation tests involving the reaction πN → ωN are investigated. (author)

  18. Backward omega /sup 0/ and eta /sup 0/ production in pi p interactions at 9 and 12 GeV/c

    CERN Document Server

    Benkheiri, P; D'Almagne, B; De Rosny, G; Eisenstein, B I; Ferrer, A; Fleury, P; Grossetête, B; Jacholkowski, A; Nguyen, H; Petroff, P; Richard, F; Rivet, P; Roudeau, P; Rougé, A; Six, J; Treille, D; Volte, A; Yiou, T P; Yoshida, H

    1979-01-01

    The backward production of omega /sup 0/ mesons in the u-channel I/sub u/=/sup 1///sub 2/ exchange reaction pi /sup -/p to N/sup 0/ (1680) omega /sup 0/ has been studied at 9 GeV/c and 12 GeV/c incident momenta. The data comes from an experiment performed at the CERN Omega Spectrometer using a fast proton trigger device. The backward production of the eta /sup 0/ meson has also been observed and the coupling constant ratio g/sub eta NN//g/sub pi NN/ has been estimated. (21 refs).

  19. $\\omega$ production in the reaction $\\pi^{-}p \\rightarrow \\pi^{+}\\pi^{-}\\pi^{0}n$ at 8 and 12 GeV/c

    CERN Document Server

    Dowell, John D; Bar-Nir, I; Bellamy, E H; Corbett, I F; Dagan, S; Esterling, R J; Garvey, J; Gnat, Y; Green, M G; Grunhaus, Jacob; Jane, M R; Jobes, M; Kenyon, I R; Lipman, Norman H; Lister, J B; Lister, J R; Litchfield, P J; March, P V; Mawson, J; McMahon, T; Robertson, Alan R; Stacey, B J; Strong, J A; Sumorok, K; Thomas, D H

    1976-01-01

    The reaction pi /sup -/p to omega n has been studied at 8 and 12 GeV/c incident momenta with the CERN Omega spectrometer using a neutron time of flight trigger. The differential cross sections and the omega - decay density matrix elements are presented as functions of the momentum transfer squared -t in the range of 0.02 to 0.80 GeV/sup 2/. The data are used to evaluate the intercept and slope of both the natural and unnatural parity exchange trajectories. Regge exchange amplitude factorisation tests involving the reaction pi N to omega N are investigated. (32 refs).

  20. New silicate-germanate Cs2Pb2[(Si0.6Ge0.4)2O7] from the series A2Pb2[B2O7], A = K, Cs, B = Si, Ge with the umbrella-like [PbO3]4- group

    Science.gov (United States)

    Belokoneva, Elena L.; Morozov, Ivan A.; Volkov, Anatoly S.; Dimitrova, Olga V.; Stefanovich, Sergey Yu.

    2018-04-01

    New silicate-germanate Cs2Pb2[(Si0.6Ge0.4)2O7] was synthesized in multi-components hydrothermal solution with 20 w.% concentration of Cs2CO3 mineralizer, pH = 10. Novel mixed compound belongs to the structure type A2Pb2[B2O7] previously indicated for powders with A = K, B=Si or Ge. Singe crystal structure determination of Cs2Pb2[(Si0.6Ge0.4)2O7] revealed the need for the correction of the space group of the earlier suggested structural model from P-3 to P-3m1, as well as for the splitting of the Pb-atom position. Umbrella-like groups [PbO3]4- are located between [(Si,Ge)O4]4- tetrahedra in mica-like honeycomb layers and play the role of tetrahedra with the Pb-lone-pair as the forth apex. Crystal chemical comparison revealed similarities and differences with the classical structure type of α-celsian Ba[Al2Si2O8] with the tetrahedral double layer. Recently investigated nonlinear optical acentric borates Pb2(BO3)(NO3) and Pb2(BO3)Cl are both related to this structural type, possessing umbrella-like groups [PbO3]4- and honeycomb layers [Pb2(BO3)]+ with the BO3-triangles on the tetrahedral positions.

  1. Fire Response of Concrete Filled Hollow Steel Sections

    DEFF Research Database (Denmark)

    Nyman, Simon; Virdi, Kuldeep

    2011-01-01

    Advanced and simplified methods of analysis and design for the fire resistance of structural elements and assemblages of structures have been developed in recent years. Some simplified methods for the fire design of concrete filled tubes have appeared in Eurocode 4 part 1.2. Experience to date in...... hollow sections....

  2. Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

    Science.gov (United States)

    Lucovsky, Gerald; Zeller, Daniel

    2011-09-01

    Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

  3. Spin-splitting in p-type Ge devices

    Energy Technology Data Exchange (ETDEWEB)

    Holmes, S. N., E-mail: s.holmes@crl.toshiba.co.uk; Newton, P. J.; Llandro, J.; Mansell, R.; Barnes, C. H. W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Morrison, C.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-08-28

    Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρ{sub xx} agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρ{sub xx} with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 10{sup 10} cm{sup −2} in depletion mode to 1.7 × 10{sup 11} cm{sup −2} in enhancement.

  4. Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Richard D’Costa, Vijay, E-mail: elevrd@nus.edu.sg; Wang, Wei; Zhou, Qian; Yeo, Yee-Chia, E-mail: eleyeoyc@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Soon Tok, Eng [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2014-01-13

    The complex dielectric function of biaxially strained Ge{sub 1−x}Sn{sub x} (0 ≤ x ≤ 0.17) alloys grown on Ge (100) has been determined by spectroscopic ellipsometry from 1.2 to 4.7 eV. The effect of substitutional Sn incorporation and the epitaxial strain on the energy transitions E{sub 1}, E{sub 1} + Δ{sub 1}, E{sub 0}′, and E{sub 2} of GeSn alloys is investigated. Our results indicate that the strained GeSn alloys show Ge-like electronic bandstructure with all the transitions shifted downward due to the alloying of Sn. The strain dependence of E{sub 1} and E{sub 1} + Δ{sub 1} transitions is explained using the deformation potential theory, and values of −5.4 ± 0.4 eV and 3.8 ± 0.5 eV are obtained for the hydrostatic and shear deformation potentials, respectively.

  5. Sonographic assessment of normal renal parenchymal and medullary pyramid thicknesses among children in Enugu, Southeast, Nigeria

    International Nuclear Information System (INIS)

    Eze, C.U.; Akpan, V.P.; Nwadike, I.U.

    2016-01-01

    Background: Renal parenchymal thickness (RPT) and renal medullary pyramid thickness (MPT) are important renal size parameters. This study was aimed at establishing normograms for RPT and MPT with respect to age and somatometric parameters among children. Methods: This was a cross sectional study done in Enugu, Nigeria between May 2013 and April 2014. The subjects were 512 children aged 1–17 years scanned with ultrasound equipment with 3.5 MHz and 5 MHz curvilinear transducers. The RPT was measured perpendicularly to the long axis of the kidney from the medullary papilla to the renal capsule and MPT was measured from the apex to the base of the medullary pyramid on the same plane. The age and somatometric parameters of the subjects were recorded. Results: The mean ± SD of RPT and MPT for the right kidney were 12.62 ± 1.67 mm and 7.10 ± 0.92 mm and the left kidney were 12.81 ± 1.7 and 7.23 ± 0.94 mm respectively. There was a significant difference between the right and left RPT and MPT (p < 0.05). The right and left RPT correlated strongly with age, body surface area (BSA), height, and weight but moderately with body mass index (BMI). A moderate positive correlation was observed between MPT and age, BSA, height, and weight. However, a weak correlation was observed between MPT and BMI. Conclusion: Normograms of RPT and MPT in relation to age could be useful for grading hydronephrosis in children. - Highlights: • Sonography of RPT and MPT at the anterior longitudinal axis of the kidney is simple. • RPT and MPT Measurements are reliable within and between experienced sonographers. • No significant gender differences in RPT and MPT values exist in this study. • Significant differences exist between the right and left RPT and MPT measurements. • Normative values of RPT and MPT in relation to age in children are useful.

  6. Temperature and density of nuclear matter in central CC interactions at P=4.2 GeV/c per nucleon

    International Nuclear Information System (INIS)

    Didenko, L.A.; Grishin, V.G.; Kowalski, M.; Kuznetsov, A.A.

    1984-01-01

    An estimation of the temperature and density of nuclear matter in central carbon-carbon interactions at P/A=4.2 GeV/c is presented. It is shown that at energies of about 4 GeV per nucleon it is possible to reach the transitional region between hadronic matter and quark-gluon plasma. The results could be however more convincing if one uses heavier ions than carbon

  7. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  8. Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics

    International Nuclear Information System (INIS)

    Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

    2016-01-01

    Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal–oxide–semiconductor field-effect-transistors (MOSFETs) with GeO x /Al 2 O 3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8–20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al 2 O 3 gate stacks are evaluated experimentally. The bulk charges in Al 2 O 3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  10 12 cm −2 at the GeO x /Ge interface and  −2.3  ×  10 12 cm −2 at the Al 2 O 3 /GeO x interface. The electric dipole at the Al 2 O 3 /GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  10 13 cm −2 . The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al 2 O 3 /GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al 2 O 3 /GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement. (paper)

  9. Synthesis of graphitized carbon, nanodiamond and graphene supported Li{sub 4}Ti{sub 5}O{sub 12} and comparison of their electrochemical performance as anodes for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shuai; Miao, Juan, E-mail: miaojuan@hpu.edu.cn; Wang, Qiufen, E-mail: grp2009wqf@163.com; Lu, Mengwei; Sun, Jiufang; Wen, Tao

    2016-12-15

    Highlights: • We synthesized graphitized carbon, nanodiamond and graphene supported Li{sub 4}Ti{sub 5}O{sub 12}, respectively. • The order of the capacities is LTO/GE > LTO/GC > LTO > LTO/ND after 500 cycles. • The rate capabilities and cycling stabilities are in the order of LTO/GE > LTO/ND > LTO/GC > LTO. - Abstract: Graphitized carbon (GC), nanodiamond (ND) and graphene (GE) supported Li{sub 4}Ti{sub 5}O{sub 12} (LTO) composites have been synthesized via a solid-state reaction, respectively. The particle sizes of LTO/GC, LTO/ND and LTO/GE are smaller than pure LTO. When tested as the anode for lithium ion batteries, the discharge capacities of LTO, LTO/GC, LTO/ND and LTO/GE composites are 100.1 mAh g{sup −1}, 150.4 mAh g{sup −1}, 90.4 mAh g{sup −1} and 218.3 mAh g{sup −1} at the current density of 175 mA g{sup −1} after 500 cycles. Their rate capacities retain 59.8%, 80.0%, 81.0% and 85.7% at the current density of 175 mA g{sup −1}, 438 mA g{sup −1}, 875 mA g{sup −1} and 175 mA g{sup −1}, respectively. Moreover, the recovery rates of their rate capacities are 78.6%, 83.4%, 88.9% and 90.1% when returned to the current density of 175 mA g{sup −1}, respectively. The reasons can be attributed to the synergistic effect between GC (ND and GE) and LTO as well as the features of the different carbon supports. This strategy, with the carbon constituting a good supporting structure, is an effective way to improve the cycling performance of anode materials for lithium ion batteries.

  10. Effect of Ge surface termination on oxidation behavior

    Science.gov (United States)

    Lee, Younghwan; Park, Kibyung; Cho, Yong Soo; Lim, Sangwoo

    2008-09-01

    Sulfur-termination was formed on the Ge(1 0 0) surface using (NH 4) 2S solution. Formation of Ge-S and the oxidation of the S-terminated Ge surface were monitored with multiple internal reflection Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. In the 0.5, 5, or 20% (NH 4) 2S solution, H-termination on the Ge(1 0 0) surface was substituted with S-termination in 1 min. When the S-terminated Ge(1 0 0) surface was exposed in air ambient, the oxidation was retarded for about 3600 min. The preservation time of the oxide layer up to one monolayer of S-terminated Ge(1 0 0) surface was about 120 times longer than for the H-terminated Ge(1 0 0) surface. However, the oxidation of S-terminated Ge(1 0 0) surface drastically increased after the threshold time. There was no significant difference in threshold time between S-terminations formed in 0.5, 5, and 20% (NH 4) 2S solutions. With the surface oxidation, desorption of S on the Ge surface was observed. The desorption behavior of sulfur on the S-terminated Ge(1 0 0) surface was independent of the concentration of the (NH 4) 2S solution that forms S-termination. Non-ideal S-termination on Ge surfaces may be related to drastic oxidation of the Ge surface. Finally, with the desulfurization on the S-terminated Ge(1 0 0) surface, oxide growth is accelerated.

  11. Study of energy-energy correlations between 12 and 46. 8 GeV c. m. energies

    Energy Technology Data Exchange (ETDEWEB)

    Braunschweig, W; Gerhards, R; Kirschfink, F J; Martyn, H U; Rosskamp, P; Bock, B; Eisenmann, J; Fischer, H M; Hartmann, H; Hilger, E

    1987-10-01

    We present data on energy-energy correlations (EEC) and their related asymmetry (AEEC) in e/sup +/e/sup -/ annihilation in the centre of mass energy range 12GeV. The energy and angular dependence of the EEC in the central region is well described by O(..cap alpha../sub s//sup 2/) QCD plus a fragmentation term proportional to 1/..sqrt..s. Bare O(..cap alpha../sub s//sup 2/) QCD reproduces our data for the large angle region of the AEEC. Nonperturbative effects for the latter are estimated with the help of fragmentation models. From various analyses using different approximations, we find that values for ..lambda.. sub(anti Manti S) in the range 0.1-0.3 GeV give a good description of the data. We also compare analytical calculations in QCD for the EEC in the back-to-back region to our data. The theoretical predictions describe well both the angular and energy dependence of the data in the back-to-back region.

  12. Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

    Science.gov (United States)

    Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

    2017-01-18

    Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

  13. [Inactivating Effect of Heat-Denatured Lysozyme on Murine Norovirus in Bread Fillings].

    Science.gov (United States)

    Takahashi, Michiko; Yasuda, Yuka; Takahashi, Hajime; Takeuchi, Akira; Kuda, Takashi; Kimura, Bon

    2018-01-01

    In this study, we investigated the viability of murine norovirus strain 1 (MNV-1), a surrogate for human norovirus, in bread fillings used for making stuffed buns and pastries. The inactivating effect of heat-denatured lysozyme, which was recently reported to have an antiviral effect, on MNV-1 contaminating the bread fillings was also examined. MNV-1 was inoculated into two types of fillings (chocolate cream, marmalade jam) at 4.5 log PFU/g, and the bread fillings were stored at 4℃ for 5 days. MNV-1 remained viable in the bread fillings during storage. However, addition of 1% heat-denatured lysozyme to the fillings resulted in a decrease of MNV-1 infectivity immediately after inoculation, in both fillings. On the fifth day of storage, MNV-1 infectivity was decreased by 1.2 log PFU/g in chocolate cream and by 0.9 log PFU/g in marmalade jam. Although the mechanism underlying the anti-norovirus effect of heat-denatured lysozyme has not been clarified, our results suggest that heat-denatured lysozyme can be used as an inactivating agent against norovirus in bread fillings.

  14. The 1.4 GeV PS Booster in its tunnel.

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The PS Improvement Programme, launched as early as 1964, had a "Booster" as the key element in the quest for higher beam intensity and density. These were limited in the PS at injection of the 50 MeV proton beam from the linac by the incoherent (Laslett-) Q-shift. Boosting the linac beam to 800 MeV would raise the PS intensity limit by an order of magnitude, from 1E12 protons per pulse to 1E13. The main motivation was the supply of intense beams to the ISR. Soon, the Booster proved to be crucial for the neutral current experiment. A unique feature of the Booster are its 4 superposed rings. Its lattice is also unusual: between its 32 bending magnets, every second straight section contains a quadrupole triplet (F,D,F), while the alternate ones are drift spaces (mostly filled with essential components like septa, kickers, RF-cavities, etc.). In each picture we see one of the 16 periods. Following the direction of the beam from right to left: a bending magnet (green); an empty straight section; a bending magnet; ...

  15. The study on Ge-68 production

    International Nuclear Information System (INIS)

    Yang, Seung Dae; Kim, Sang Wook; Hur, Min Goo

    2009-06-01

    The Ge-68 is a correction source of PET and is used in radiopharmaceuticals synthesis. This project is mainly aimed to produce the Ge-68. Based on this project results, the local Ge-68 production can be possible and the revitalization of the radioisotope utilization research areas can be accomplished. The characteristics of the Ge-68 and Ga-68 are obtained and analyzed. The production conditions are also developed, and the domestic and overseas status of the art are considered. The stacked foil target is designed using Al disc and dried Ga 2 O 3 powder, and the irradiation target is also designed. The cross section of the nat. Ga(p,xn) 68 Ge reaction is obtained using the developed target. The separation experiment of cold Ge/Ga in the H 2 SO 4 -HCl solution are carried out as a simulation experiment of the radioactive Ge/Ga sources. The separation of Ge/Ga by liquid extraction of CCl 4 in 8M HCl is also accomplished. And the synthesis experiment of the Hematophorphyrin-Ga complex is performed

  16. Preparation, crystallography, magnetic and magnetothermal properties of Ce5SixGe4-x alloys

    Energy Technology Data Exchange (ETDEWEB)

    Vijayaraghavan, Rangarajan [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    An investigation of the crystal structure and the phase relationships in the Ce5Si4-xGex system has been carried out. The crystal structures of the single phase intermetallics were characterized using X-ray powder diffraction and subsequent refinement employing the Rietveld analysis technique was performed. The intermetallic system was found to crystallize in three distinct crystal structures. The Ce5Si4-based solid solution extends from x = 0 to x = 2.15 and it was found to crystallize in the well-known Zr5Si4-type tetragonal structure. The germanium rich alloys, where 3.1 ≤} x ≤ 4, crystallized in the Sm5Ge4-type orthorhombic structure. The crystal structure of the intermediate phase, when 2.35 ≤ x ≤ 2.8, was found out to be of the Gd5Si2Ge2-type monoclinic structure. Microhardness tests were conducted on the samples in order to probe the trend in mechanical properties in this alloy system as a function of Ge concentration. The magnetic, thermal and magnetocaloric properties of the Ce5Si4-xGex alloy system have been investigated for x = 0, 1.0, 1.8, 2.5, 2.8, 3.5, 3.8 and 4.0. The phases with x = 0, 1.0 and 1.8 crystallize in the tetragonal Zr5Si4 structure and those with x = 2.5, 2.8 form in the Gd5Si2Ge2-type monoclinic structure. The alloys with x = 3.5, 3.8 and 4.0 crystallize in the Sm5Ge4-type orthorhombic structure. The Curie temperature of the tetragonal phases increases with increasing Ge content. The ordering temperatures of the monoclinic and orthorhombic phases remain nearly unaffected by the composition, with the Curie temperatures of the latter slightly higher than those of the former. All the alloys display evidence of antiferromagnetic interactions in the ground state. The orthorhombic and the

  17. A sea cucumber-like BiOBr nanosheet/Zn2GeO4 nanorod heterostructure for enhanced visible light driven photocatalytic activity

    Science.gov (United States)

    Zhang, Zhiping; Ge, Xin; Zhang, Xueyu; Duan, Lianfeng; Li, Xuesong; Yang, Yue; Lü, Wei

    2018-01-01

    In present work, a two-step hydrothermal/solvothermal method was developed to fabricate sea cucumber-like p-n heterojunctions of p-BiOBr/n-Zn2GeO4. The BiOBr nanosheets were grafted onto the surface of Zn2GeO4 nanorods. BiOBr/Zn2GeO4 nanocomposites exhibit remarkable photocatalytic activity under visible-light irradiation, and photocatalytic activity was studied in the catalytic test of rhodamine B decolorization. The mechanism for improved photocatalytic activity is interpreted in terms of the formation of type II band alignment between BiOBr and Zn2GeO4, which is confirmed by UV-vis diffuse absorption and VB-XPS spectra. BiOBr nanosheet as an admirable electron transport medium provide desirable specific surface area for the nanocomposite and a suitable band gap for heterojunction structure. Furthermore, scavenger experiments confirmed that h+ and {{{{O}}}2}\\cdot - were the main oxygen active species in the decolorization process.

  18. Study of Ge loss during Ge condensation process

    International Nuclear Information System (INIS)

    Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

    2014-01-01

    Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

  19. Azimuthal correlations in anti pp interactions at 22.4 GeV/c

    International Nuclear Information System (INIS)

    Reimer, P.

    Data are presented on azimuthal two particle correlations and the effect is estimated of resonance production on these correlations in anti pp interactions at 22.4 GeV/c. Attention is paid to correlations between two charged pions produced in the process anti p+p→ two charged pions + anything. The dependence is described of the azimuthal asymmetry parameter on rapidity difference. (Z.J.)

  20. A non-typical sequence of phase transitions in (NH4)3GeF7: optical and structural characterization.

    Science.gov (United States)

    Mel'nikova, S V; Molokeev, M S; Laptash, N M; Misyul, S V

    2016-03-28

    Single crystals of germanium double salt (NH4)3GeF7 = (NH4)2GeF6·NH4F = (NH4)3[GeF6]F were grown and studied by the methods of polarization optics and X-ray diffraction. The birefringence Δn = (no - ne), the rotation angle of the optical indicatrix ϕ(T) and unit cell parameters were measured in the temperature range 100-400 K. Three structural phase transitions were found at the temperatures: T1↓ = 279.2 K (T1↑ = 279.4 K), T2↑ = 270 K (T2↓ = 268.9 K), T3↓ = 218 K (T3↑ = 227 K). An unusual sequence of symmetry transformations with temperature change was established: P4/mbm (Z = 2) (G1) ↔ Pbam (Z = 4) (G2) ↔ P21/c (Z = 4) (G3) ↔ Pa3[combining macron] (Z = 8) (G4). The crystal structures of different phases were determined. The experimental data were additionally interpreted by a group-theoretical analysis of the complete condensate of order parameters taking into account the critical and noncritical atomic displacements. Strengthening of the N-HF hydrogen bonds can be a driving force of the observed phase transitions.

  1. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  2. Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Keisuke; Nakashima, Hiroshi, E-mail: nakasima@astec.kyushu-u.ac.jp [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Noguchi, Ryutaro; Wang, Dong [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Mitsuhara, Masatoshi; Nishida, Minoru [Department of Engineering Sciences for Electronics and Materials, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Hara, Toru [National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2015-09-21

    Electrical and structural properties were investigated for group-4 transition-metal nitride contacts on Ge (TiN/Ge, ZrN/Ge, and HfN/Ge), which were prepared by direct sputter depositions using nitride targets. These contacts could alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. It was revealed that this phenomenon is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the nitride/Ge interfaces. The strength of FLP alleviation positively depended on the thickness of a-IL. TiN/Ge and ZrN/Ge contacts with ∼2 nm-thick a-ILs showed strong FLP alleviations with hole barrier heights (Φ{sub BP}) in the range of 0.52–56 eV, and a HfN/Ge contact with an ∼1 nm-thick a-IL showed a weaker one with a Φ{sub BP} of 0.39 eV. However, TaN/Ge contact without a-IL did not show such FLP alleviation. Based on the results of depth distributions for respective elements, we discussed the formation kinetics of a-ILs at TiN/Ge and ZrN/Ge interfaces. Finally, we proposed an interfacial dipole model to explain the FLP alleviation.

  3. The pion electromagnetic form factor in the time-like energy range 1.35≤√s≤2.4 GeV

    International Nuclear Information System (INIS)

    1988-10-01

    The e + e - → π + π - cross section has been measured from about 280 events (an order of magnitude more than the previous world statistics) in the energy interval 1.35≤√s≤2.4 GeV with the DM2 detector at DCI. The pion squared form factor shows a deep minimum around 1.6 GeV/c 2 and is best fit under the hypothesis of two ρ like resonances ≅ 0.2 GeV/c 2 wide with 1.43 and 1.76 GeV/c 2 masses

  4. Theory Support for the Excited Baryon Analysis Program at the JLAB 12 GeV Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Burkert, Volker; Lee, Tsung-Shung; Mokeev, Viktor; Aznauryan, Inna; Braun, Vladimir; Capstick, Simon; Cloet, Ian; Edwards, Robert; Gianinni, M.; Lin, Huey-Wen; Roberts, C.D.; Stoler, Paul; Zhao, Qiang; Zou, Bing-Song

    2009-01-01

    This document summarizes the contributions of the Electromagnetic $\\gamma_vNN^*$ Transition Form Factors workshop participants that provide theoretical support of the excited baryon program at the 12 GeV energy upgrade at JLab. The main objectives of the workshop were (a) review the status of the $\\gamma_vNN^*$ transition form factors extracted from the meson electroproduction data, (b) call for the theoretical interpretations of the extracted $N$-$N^*$ transition form factors, that enable access to the mechanisms responsible for the N* formation and to their emergence from QCD.

  5. Effects of high NH4+ on K+ uptake, culm mechanical strength and grain filling in wheat

    Directory of Open Access Journals (Sweden)

    Lingan eKong

    2014-12-01

    Full Text Available It is well established that a high external NH4+ concentration depresses many processes in plant development, but the underlying mechanisms are still not well understood. To determine whether the negative effects of high levels of NH4+ are related to competitive cation uptake, wheat was grown in a field with moderate (18 g N m-2 and high (30 g N m-2 supplies of NH4+ in the presence or absence of additional K+ (6 g K2O m-2 to examine culm mechanical strength, the main components of the vascular bundle, nitrogen (N remobilization and the grain-filling rate. The results indicated that an excessive supply of NH4+ significantly decreased culm mechanical strength, the cellulose and lignin contents of vascular bundles, the N remobilization efficiency (NRE and the grain-filling rate compared with a moderate level of NH4+. The additional provision of K+ considerably alleviated these negative effects of high NH4+, resulting in a 19.41%-26.95% increase in culm mechanical strength during grain filling and a 34.59% increase in the NRE. An assay using the scanning ion-selective electrode technique (SIET showed that the net rate of transmembrane K+ influx decreased by 84.62%, and measurements using flame photometry demonstrated that the K+ content decreased by 36.13% in wheat plants subjected to high NH4+. This study indicates that the effects of high NH4+ on culm mechanical strength, cellulose and lignin contents, the NRE and the grain-filling rate are probably associated with inhibition of K+ uptake in wheat.

  6. The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

    Science.gov (United States)

    Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

    2018-03-01

    The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

  7. Ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) – New representatives of the YIrGe{sub 2} type

    Energy Technology Data Exchange (ETDEWEB)

    Voßwinkel, Daniel; Heletta, Lukas; Hoffmann, Rolf-Dieter; Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de

    2016-11-15

    The YIrGe{sub 2} type ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) were synthesized from the elements by arc-melting and characterized by powder X-ray diffraction. The structure of DyRhGe{sub 2} was refined from single crystal X-ray diffractometer data: Immm, a = 426.49(9), b = 885.0(2), c = 1577.4(3) pm, wR2 = 0.0533, 637 F{sup 2} values, 30 variables (300 K data). The structure contains two crystallographically independent dysprosium atoms in pentagonal prismatic and hexagonal prismatic coordination. The three-dimensional [RhGe{sub 2}] polyanion is stabilized through covalent Rh–Ge (243–261 pm) and Ge–Ge (245–251 pm) bonding. The close structural relationship with the slightly rhodium-poorer germanides RE{sub 5}Rh{sub 4}Ge{sub 10} (≡ RERh{sub 0.8}Ge{sub 2}) is discussed. Temperature-dependent magnetic susceptibility measurements reveal Pauli paramagnetism for YRhGe{sub 2} and Curie-Weiss paramagnetism for RERhGe{sub 2} with RE = Gd, Tb, Dy and Ho. These germanides order antiferromagnetically at T{sub N} = 7.2(5), 10.6(5), 8.1(5), and 6.4(5) K, respectively. - Graphical abstract: The germanides RERhGe{sub 2} (RE = Y, Gd-Ho) are new representatives of the YIrGe{sub 2} type.

  8. Computational modeling of the structure and the ionic conductivity of the solid electrolyte materials Li3AsS4 and its Ge substitutions

    Science.gov (United States)

    Al-Qawasmeh, Ahmad; Holzwarth, N. A. W.

    Oak Ridge National Laboratory (G. Sahu et al.) reported that the substitution of Ge into Li3AsS4 leads to the composition Li3.334Ge0.334As0.666S4 with impressively high ionic conductivity . We use ab initio calculations to examine the structural relationships and the ionic conductivity mechanisms for pure Li3AsS4, Li3.334Ge0.334As0.666S4, and other compositions of these electrolytes. Supported by NSF Grant DMR-1105485 and 1507942 and WFU's DEAC cluster.

  9. High pressure 129I Moessbauer studies of GeI4 molecular crystals

    International Nuclear Information System (INIS)

    Pasternak, M.P.; Taylor, R.D.

    1989-01-01

    The Moessbauer effect in 129 I in conjunction with Diamond-Anvil-Cell high pressure techniques was applied to investigate the high pressure phase(s) of the molecular crystal GeI 4 . The 129 I Quadrupole Interaction was the main probe for characterizing the intermolecular structural transformation with pressure. With increasing pressure, at about 15 GPAa, the onset of a partial molecular-association phase (HP1) is first observed. In HP1 two out of the four iodines strongly overlap to form linear chains of GeI 4 . The HP1 phase coexists with the low pressure (LP) molecular phase, but its population increases with increasing pressure. At P ∼20 GPa a second high pressure phase (HP2) is identified where all four iodines strongly overlap to form a three dimensional, fully molecular-associated structure. With increasing pressure and at P > 20 GPa, HP2 is the only phase up to P = 34 GPa, the highest pressure used. A significant hysteresis of the relative abundances with pressure is observed. The isomer shift of the HP2 and HP1 structures is considerably larger than that of the LP one. 11 refs., 3 figs

  10. High pressure 129I Moessbauer studies of GeI4 molecular crystals

    International Nuclear Information System (INIS)

    Pasternak, M.P.; Los Alamos National Lab.; Taylor, R.D.

    1990-01-01

    The Moessbauer effect in 129 I in cunjunction with Diamond-Anvil-Cell high pressure techniques was applied to investigate the high pressure phase(s) of the molecular crystal GeI 4 . The 129 I Quadrupole Interaction was the main probe for characterizing the intermolecular structural transformation with pressure. With increasing pressure, at about 15 GPa, the onset of a partial molecular-association phase (HP1) is first observed. In HP1 two out of the four iodines strongly overlap to form linear chains of GeI 4 . The HP1 phase coexists with the low pressure (LP) molecular phase, but its population increases with increasing pressure. At P≅20 GPa a second high pressure phase (HP2) is identified where all four iodines strongly overlap to form a three dimensional, fully molecular-associated structure. With increasing pressure and at P>20 GPa, HP2 is the only phase up to P=34 GPa, the highest pressure used. A significant hysteresis of the relative abundances with pressure is observed. The isomer shift of the HP2 and HP1 structures is considerably larger than that of the LP one. (orig.)

  11. Identified hadron transverse momentum spectra in Au+Au collisions at sNN=62.4 GeV

    Science.gov (United States)

    Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Chai, Z.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Halliwell, C.; Hamblen, J.; Hauer, M.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Seals, H.; Sedykh, I.; Smith, C. E.; Stankiewicz, M. A.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; Nieuwenhuizen, G. J. Van; Vaurynovich, S. S.; Verdier, R.; Veres, G. I.; Wenger, E.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wysłouch, B.

    2007-02-01

    Transverse momentum spectra of pions, kaons, protons, and antiprotons from Au+Au collisions at sNN = 62.4 GeV have been measured by the PHOBOS experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. The identification of particles relies on three different methods: low momentum particles stopping in the first detector layers; the specific energy loss (dE/dx) in the silicon spectrometer, and time-of-flight measurement. These methods cover the transverse momentum ranges 0.03 0.2, 0.2 1.0, and 0.5 3.0 GeV/c, respectively. Baryons are found to have substantially harder transverse momentum spectra than mesons. The pT region in which the proton to pion ratio reaches unity in central Au+Au collisions at sNN = 62.4 GeV fits into a smooth trend as a function of collision energy. At low transverse mass, the spectra of various species exhibit a significant deviation from transverse mass scaling. The observed particle yields at very low pT are comparable to extrapolations from higher pT for kaons, protons and antiprotons. By comparing our results to Au+Au collisions at sNN = 200 GeV, we conclude that the net proton yield at midrapidity is proportional to the number of participant nucleons in the collision.

  12. Electronic structure of LaFe{sub 2}X{sub 2} (X = Si,Ge)

    Energy Technology Data Exchange (ETDEWEB)

    Hase, I., E-mail: i.hase@aist.go.jp [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan); Yanagisawa, T. [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan)

    2011-11-15

    We have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which well explains the result of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. D(E{sub F}) strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom, as also found in iron-pnictide system. Recently found iron-pnictide superconductor (Ba,K)Fe{sub 2}As{sub 2} and the heavy-fermion superconductor CeCu{sub 2}Si{sub 2} both have the same crystal structure. In this paper we have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. These compounds also have the same crystal structure and closely related to both of (Ba,K)Fe{sub 2}As{sub 2} and CeRu{sub 2}Ge{sub 2}. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which are already found that they well explain the results of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. The density of states at the Fermi level strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom from the two-dimensional Fe plane, as also found in iron-pnictide system. The electronic specific heat coefficient is 11.8 mJ/mol K{sup 2} for LaFe{sub 2}Si{sub 2} and 12.5 mJ/mol K{sup 2} for LaFe{sub 2}Ge{sub 2}, which is about 1/3 and 1/2 of experimental results, respectively.

  13. Phase transformation in nanocrystalline α-quartz GeO2 up to 51.5 GPa

    International Nuclear Information System (INIS)

    Wang, H; Liu, J F; Wu, H P; He, Y; Chen, W; Wang, Y; Zeng, Y W; Wang, Y W; Luo, C J; Liu, J; Hu, T D; Stahl, K; Jiang, J Z

    2006-01-01

    The high-pressure behaviour of nanocrystalline α-quartz GeO 2 (q-GeO 2 ) with average crystallite sizes of 40 and 260 nm has been studied by in situ high-pressure synchrotron radiation x-ray diffraction measurements up to about 51.5 GPa at ambient temperature. Two phase transformations, q-GeO 2 to amorphous GeO 2 and amorphous GeO 2 to monoclinic GeO 2 , are detected. The onset and end of the transition pressures for the q-GeO 2 -to-amorphous GeO 2 phase transition are found to be approximately 10.8 and 14.9 GPa for the 40 nm q-GeO 2 sample, and 9.5 and 12.4 GPa for the 260 nm q-GeO 2 sample, respectively. The mixture of amorphous and monoclinic GeO 2 phases remains up to 51.5 GPa during compression and even after pressure release. This result strongly suggests that the difference of free energy between the amorphous phase and the monoclinic phase might be small. Consequently, defects in the starting material, which alter the free energies of the amorphous phase and the monoclinic phase, may play a key role for the phase transformation of q-GeO 2

  14. Charge conjugation symmetry in proton--antiproton interactions at 5.4 GeV energy

    International Nuclear Information System (INIS)

    Whittaker, J.D.

    1977-10-01

    The charge conjugation symmetry of the reaction anti pp- → π/sup +-/ + X was checked at radical s = 5.4 GeV. The measurement was made with a double arm spectrometer, with each arm triggered independently. Each spectrometer arm had an acceptance of 15 millisteradians and subtended an angular range of 16 to 20 0 in the lab, 77 to 91 0 in the pion center of mass system (CMS). The asymmetry (N + - N - )/(N + + N - ) was determined at 90 0 CMS over a P/sub t/ range of .5 to 2.7 GeV/c. Corrections were made for target empty, for pions in the incident beam, and for particle misidentification in the spectrometer. The resulting symmetry was .0084 +- .0090; consistent with zero. The asymmetry introduced by differential pion absorption in the spectrometer was estimated to be .0021. In the P/sub t/ regions of .48 to .67 to 1.00 and 1.00 to 2.7 GeV/c, the asymmetries were .0037 +- .0115, .0178 +- .0145, and -.0025 +- .0311, respectively. The corresponding limits on the amplitude ratio V = Re (C-nonconserving amplitude)/(C-conserving amplitude) are one half of the asymmetry limits

  15. FERMI-LAT DETECTION OF PULSED GAMMA-RAYS ABOVE 50 GeV FROM THE VELA PULSAR

    Energy Technology Data Exchange (ETDEWEB)

    Leung, Gene C. K.; Takata, J.; Ng, C. W.; Cheng, K. S. [Department of Physics, The University of Hong Kong, Pokfulam Road (Hong Kong); Kong, A. K. H.; Tam, P. H. T. [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu, Taiwan (China); Hui, C. Y., E-mail: gene930@connect.hku.hk, E-mail: takata@hku.hk [Department of Astronomy and Space Science, Chungnam National University, Daejeon (Korea, Republic of)

    2014-12-20

    The first Fermi-Large Area Telescope (LAT) catalog of sources above 10 GeV reported evidence of pulsed emission above 25 GeV from 12 pulsars, including the Vela pulsar, which showed evidence of pulsation at >37 GeV energy bands. Using 62 months of Fermi-LAT data, we analyzed the gamma-ray emission from the Vela pulsar and searched for pulsed emission above 50 GeV. Having confirmed the significance of the pulsation in 30-50 GeV with the H test (p-value ∼10{sup –77}), we extracted its pulse profile using the Bayesian block algorithm and compared it with the distribution of the five observed photons above 50 GeV using the likelihood ratio test. Pulsation was significantly detected for photons above 50 GeV with a p-value of =3 × 10{sup –5} (4.2σ). The detection of pulsation is significant above 4σ at >79 GeV and above 3σ at >90 GeV energy bands, making this the highest energy pulsation significantly detected by the LAT. We explore the non-stationary outer gap scenario of the very high-energy emissions from the Vela pulsar.

  16. The Effect of Indium Content on the Atomic Environment and Cluster Stability of GeSe4Inx=10,15 Glasses

    Directory of Open Access Journals (Sweden)

    Georgios S. E. Antipas

    2015-01-01

    Full Text Available The atomic environments of two chalcogenide glasses, with compositions GeSe4In10 and GeSe4In15, were studied via Reverse Monte Carlo and Density Functional Theory. Indium content demoted Ge–Se bonding in favor of Se-In while the contribution of Se–Se in the first coordination shell order was faint. Upon transition to the richer In glass, there was formation of rich Ge-centered clusters at radial distances further than 4 Å from the RMC box center, which was taken to signify a reduction of Ge–Se interactions. Cluster coordination by Se promoted stability while, very conclusively, In coordination lowered cluster stability by intervening in the Ge–Se and Se–Se networks.

  17. Control of Laser Plasma Based Accelerators up to 1 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Kei [Univ. of Tokyo (Japan); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2007-12-01

    This dissertation documents the development of a broadband electron spectrometer (ESM) for GeV class Laser Wakefield Accelerators (LWFA), the production of high quality GeV electron beams (e-beams) for the first time in a LWFA by using a capillary discharge guide (CDG), and a statistical analysis of CDG-LWFAs. An ESM specialized for CDG-LWFAs with an unprecedented wide momentum acceptance, from 0.01 to 1.1 GeV in a single shot, has been developed. Simultaneous measurement of e-beam spectra and output laser properties as well as a large angular acceptance (> ± 10 mrad) were realized by employing a slitless scheme. A scintillating screen (LANEX Fast back, LANEX-FB)--camera system allowed faster than 1 Hz operation and evaluation of the spatial properties of e-beams. The design provided sufficient resolution for the whole range of the ESM (below 5% for beams with 2 mrad divergence). The calibration between light yield from LANEX-FB and total charge, and a study on the electron energy dependence (0.071 to 1.23 GeV) of LANEX-FB were performed at the Advanced light source (ALS), Lawrence Berkeley National Laboratory (LBNL). Using this calibration data, the developed ESM provided a charge measurement as well. The production of high quality electron beams up to 1 GeV from a centimeter-scale accelerator was demonstrated. The experiment used a 310 μm diameter gas-filled capillary discharge waveguide that channeled relativistically-intense laser pulses (42 TW, 4.5 x 1018 W/cm2) over 3.3 centimeters of sufficiently low density (≃ 4.3 x 1018/cm3) plasma. Also demonstrated was stable self-injection and acceleration at a beam energy of ≃ 0.5 GeV by using a 225 μm diameter capillary. Relativistically-intense laser pulses (12 TW, 1.3 x 1018W/cm2) were guided over 3.3 centimeters of low density (≃ 3.5 x 1018/cm3) plasma in this experiment. A statistical analysis of the CDG

  18. Optimization of the spatial resolution for the GE discovery PET/CT 710 by using NEMA NU 2-2007 standards

    Science.gov (United States)

    Yoon, Hyun Jin; Jeong, Young Jin; Son, Hye Joo; Kang, Do-Young; Hyun, Kyung-Yae; Lee, Min-Kyung

    2015-01-01

    The spatial resolution in positron emission tomography (PET) is fundamentally limited by the geometry of the detector element, the positron's recombination range with electrons, the acollinearity of the positron, the crystal decoding error, the penetration into the detector ring, and the reconstruction algorithms. In this paper, optimized parameters are suggested to produce high-resolution PET images by using an iterative reconstruction algorithm. A phantom with three point sources structured with three capillary tubes was prepared with an axial extension of less than 1 mm and was filled with 18F-fluorodeoxyglucose (18F-FDG) with concentrations above 200 MBq/cc. The performance measures of all the PET images were acquired according to the National Electrical Manufacturers Association (NEMA) NU 2-2007 standards procedures. The parameters for the iterative reconstruction were adjusted around the values recommended by General Electric GE, and the optimized values of the spatial resolution and the full width at half maximum (FWHM) or the full width at tenth of maximum (FWTM) values were found for the best PET resolution. The axial and the transverse spatial resolutions, according to the filtered back-projection (FBP) at 1 cm off-axis, were 4.81 and 4.48 mm, respectively. The axial and the transaxial spatial resolutions at 10 cm off-axis were 5.63 mm and 5.08 mm, respectively, and the trans-axial resolution at 10 cm was evaluated as the average of the radial and the tangential measurements. The recommended optimized parameters of the spatial resolution according to the NEMA phantom for the number of subsets, the number of iterations, and the Gaussian post-filter are 12, 3, and 3 mm for the iterative reconstruction VUE Point HD without the SharpIR algorithm (HD), and 12, 12, and 5.2 mm with SharpIR (HD.S), respectively, according to the Advantage Workstation Volume Share 5 (AW4.6). The performance measurements for the GE Discovery PET/CT 710 using the NEMA NU 2

  19. Nuclear magnetic resonance investigation of the heavy fermion system Ce2CoAl7Ge4

    Science.gov (United States)

    Dioguardi, A. P.; Guzman, P.; Rosa, P. F. S.; Ghimire, N. J.; Eley, S.; Brown, S. E.; Thompson, J. D.; Bauer, E. D.; Ronning, F.

    2017-12-01

    We present nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) measurements performed on single crystalline Ce2CoAl7Ge4 , a member of a recently discovered family of heavy fermion materials Ce2M Al7Ge4 (M =Co , Ir, Ni, or Pd). Previous measurements indicated a strong Kondo interaction as well as magnetic order below TM=1.8 K . Our NMR spectral measurements show that the Knight shift K is proportional to the bulk magnetic susceptibility χ at high temperatures. A clear Knight shift anomaly (K ¬∝χ ) is observed at coherence temperatures T*˜17.5 K for H0∥c ̂ and 10 K for H0∥a ̂ at the 59Co site, and T*˜12.5 K at the 27Al(3) site for H0∥a ̂ characteristic of the heavy fermion nature of this compound. At high temperatures, the 59Co NMR spin-lattice relaxation rate T1-1 is dominated by spin fluctuations of the 4 f local moments with a weak metallic background. The spin fluctuations probed by 59Co NMR are anisotropic and larger in the basal plane than in the c direction. Furthermore, we find (T1T K ) -1∝T-1 /2 at the 59Co site as expected for a Kondo system for T >T* and T >TK . 59Co NQR T1-1 measurements at low temperatures indicate slowing down of spin fluctuations above the magnetic ordering temperature TM˜1.8 K . A weak ferromagnetic character of fluctuations around q =0 is evidenced by an increase of χ T versus T above the magnetic ordering temperature. We also find good agreement between the observed and calculated electric field gradients at all observed sites.

  20. Insights on the origin of the Tb{sub 5}Ge{sub 4} magnetocaloric effect

    Energy Technology Data Exchange (ETDEWEB)

    Belo, J.H.; Barbosa, M.B. [IFIMUP and IN-Institue of Nanoscience and Nanotechnology, Departamento de Física da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre. 687, 4169-007 Porto (Portugal); Pires, A.L. [CFNUL - Centro de Física Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto, 2, 1649-003 Lisboa (Portugal); Costa, R.M.; Teixeira, J.G.V.; Silva, J. [IFIMUP and IN-Institue of Nanoscience and Nanotechnology, Departamento de Física da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre. 687, 4169-007 Porto (Portugal); Algarabel, P.A. [Instituto de Ciencia de Materiales de Aragón, Universidad de Zaragoza and Consejo Superior de Investigaciones Cientificas, 50009 Zaragoza (Spain); Departamente de Física de la Materia Condensada, Universidad de Zaragoza, 50009 Zaragoza (Spain); Magen, C. [Instituto de Nanociencia de Aragón-ARAID, Universidad de Zaragoza, 50009 Zaragoza (Spain); Departamente de Física de la Materia Condensada, Universidad de Zaragoza, 50009 Zaragoza (Spain); Instituto de Nanociencia de Aragon, Universidad de Zaragoza, 50009 Zaragoza (Spain); Morellon, L. [Departamente de Física de la Materia Condensada, Universidad de Zaragoza, 50009 Zaragoza (Spain); Instituto de Nanociencia de Aragon, Universidad de Zaragoza, 50009 Zaragoza (Spain); Amaral, J.S. [IFIMUP and IN-Institue of Nanoscience and Nanotechnology, Departamento de Física da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre. 687, 4169-007 Porto (Portugal); CICECO, Universidade de Aveiro, 3810-193 Aveiro (Portugal); and others

    2017-05-15

    In this report the magnetic, atomic structures and spin-lattice coupling have been thoroughly studied through high magnetic field magnetometry, Synchrotron X-ray diffraction under applied magnetic field and magnetostriction measurements in the Tb{sub 5}Ge{sub 4} compounds. A field induced phase transition from an antiferromagnetic towards a ferromagnetic ordering was confirmed but with absence of structural transformation. This absence has been confirmed experimentally through synchrotron x-ray diffraction under applied field (up to 30 T). Moreover, this absence was explained via a thermodynamic free energy model: first principles calculations determined a large energy gap (ΔE=0.65 eV) between the two possible structures, O(I) and O(II). From magnetic and structural properties, a H-T phase diagram has been proposed for Tb{sub 5}Ge{sub 4}. Finally it was observed a large magnetostriction (up to 600 ppm) induced by ∆H=7 T.

  1. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    International Nuclear Information System (INIS)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

    2014-01-01

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  2. Observations of the D, E and delta mesons in π-p interactions at 12 and 15 GeV/c

    International Nuclear Information System (INIS)

    Corden, M.J.; Dowell, J.D.; Garvey, J.

    1978-07-01

    The D(1285), E(1420) and delta(975) mesons produced in 12 and 15 GeV/c π - p interactions at the CERN Omega Spectrometer have been observed. Production cross sections and decay branching ratios are presented. Analysis of the decay D(1285) → delta(975) π favours a spin parity assignment of 1 + . (author)

  3. Advanced Light Source, a 1-2 GeV synchrotron radiation facility

    International Nuclear Information System (INIS)

    Berkner, K.H.

    1985-01-01

    The Advanced Light Source (ALS), a dedicated synchrotron radiation facility optimized to generate soft x-ray and vacuum ultraviolet (XUV) light using magnetic insertion devices, was proposed by the Lawrence Berkeley Laboratory in 1982. It consists of a 1.3-GeV injection system, an electron storage ring optimized at 1.3 GeV (with the capability of 1.9-GeV operation), and a number of photon beamlines emanating from twelve 6-meter-long straight sections. In addition, 24 bending-magnet ports will be available for development. The ALS was conceived as a research tool whose range and power would stimulate fundamentally new research in fields from biology to materials science. The conceptual design and associated cost estimate for the ALS have been completed and reviewed by the US Department of Energy (DOE), but Title I activities have not yet begun. The focus in this study is on the history of the ALS as an example of how a technical construction project was conceived, designed, proposed, and validated within the framework of a national laboratory funded largely by the DOE

  4. 73Ge, 119Sn and 207Pb: general cooperative effects of single atom ligands on the NMR signals observed in tetrahedral [MXnY4-n] (M = Ge, Sn, Pb; 1 ≤ n ≤ 4; X, Y = Cl, Br, I) coordination compounds of heavier XIV group elements.

    Science.gov (United States)

    Benedetti, M; De Castro, F; Fanizzi, F P

    2017-02-28

    An inverse linear relationship between 73 Ge, 119 Sn and 207 Pb NMR chemical shifts and the overall sum of ionic radii of coordinated halido ligands has been discovered in tetrahedral [MX n Y 4-n ] (M = Ge, Sn, Pb; 1 ≤ n ≤ 4; X, Y = Cl, Br, I) coordination compounds. This finding is consistent with a previously reported correlation found in octahedral, pentacoordinate and square planar platinum complexes. The effect of the coordinated halido ligands acting on the metal as shielding conducting rings is therefore confirmed also by 73 Ge, 119 Sn and 207 Pb NMR spectroscopy.

  5. Influence of the Localization of Ge Atoms within the Si(001(4 × 2 Surface Layer on Semicore One-Electron States

    Directory of Open Access Journals (Sweden)

    Olha I. Tkachuk

    2016-03-01

    Full Text Available Adsorption complexes of germanium on the reconstructed Si(001(4 × 2 surface have been simulated by the Si96Ge2Н84 cluster. For Ge atoms located on the surface layer, DFT calculations (B3LYP/6-31G** of their 3d semicore-level energies have shown a clear-cut correlation between the 3d5/2 chemical shifts and mutual arrangement of Ge atoms. Such a shift is positive when only one Ge atom penetrates into the crystalline substrate, while being negative for both penetrating Ge atoms. We interpret these results in terms of the charge distribution in clusters under consideration.

  6. Search strange (S = -2) dibaryons in the reaction K-+d->K++MM at 1,4 GeV/c

    International Nuclear Information System (INIS)

    D'Agostini, G.; Auriemma, G.; Marini, G.; Martellotti, G.; Massa, F.; Nigro, A.; Rambaldi, A.; Sciubba, A.

    1982-01-01

    The reaction K - + d -> K + + MM has been studied at 1.4 GeV/c, to search for Q = -1, S = -2 dibaryonic states, in the mass range approx.= 2.1-2.5 GeV/c 2 . No evidence for the presence of structures has been found and upper limits for the backward production differential cross section for narrow states are established. (orig.)

  7. Impact of Ge4+ Ion as Structural Dopant of Ti4+ in Anatase: Crystallographic Translation, Photocatalytic Behavior, and Efficiency under UV and VIS Irradiation

    Directory of Open Access Journals (Sweden)

    Václav Štengl

    2012-01-01

    Full Text Available Nanometric particles of germanium-doped TiO2 were prepared by homogeneous hydrolysis of TiOSO4 and GeCl4 in an aqueous solution using urea as the precipitation agent. Structural evolution during heating of these starting Ge-Ti oxide powders was studied by X-ray diffraction (XRD and high-temperature X-ray powder diffraction (HTXRD. The morphology and microstructure changes were monitored by means of scanning electron microscopy (SEM, Raman and infrared spectroscopy (IR, specific surface area (BET, and porosity determination (BJH. The photocatalytic activity of all samples was determined by decomposition of Orange II dye under irradiation at 365 nm and 400 nm. Moderate doping with concentration upto value 2.05 wt.% positively influences azo dye degradation under UV and Vis light. Further improvement cannot be achieved by higher Ge doping. Effect of the annealing (200, 400, and 700°C on photocatalysis and other properties has been assessed.

  8. Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation

    Energy Technology Data Exchange (ETDEWEB)

    Satoh, Yuhki, E-mail: yu-ki@ecei.tohoku.ac.jp; Itoh, Yuhki; Kawashima, Tomoyuki; Washio, Katsuyoshi

    2016-03-01

    To form Ge dots on a Si substrate, the effect of thermal reaction temperature of sub-monolayer C with Si (100) was investigated and the deposited Ge thickness was optimized. The samples were prepared by solid-source molecular beam epitaxy with an electron-beam gun for C sublimation and a Knudsen cell for Ge evaporation. C of 0.25 ML was deposited on Si (100) at a substrate temperature of 200 °C, followed by a high-temperature treatment at the reaction temperature (T{sub R}) of 650–1000 °C to create Si–C bonds. Ge equivalent to 2 to 5 nm thick was subsequently deposited at 550 °C. Small and dense dots were obtained for T{sub R} = 750 °C but the dot density decreased and the dot diameter varied widely in the case of lower and higher T{sub R}. A dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge deposition equivalent to 3 to 5 nm thick and a standard deviation of dot diameter was the lowest of 10 nm for 5 nm thick Ge. These results mean that C-mediated Ge dot formation was strongly influenced not only by the c(4 × 4) reconstruction condition through the Si–C reaction but also the relationship between the Ge deposition thickness and the exposed Si (100)-(2 × 1) surface area. - Highlights: • The effect of Si–C reaction temperature on Ge dot formation was investigated. • Small and dense dots were obtained for T{sub R} = 750 °C. • The dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge = 3 to 5 nm. • The standard deviation of dot diameter was the lowest of 10 nm at Ge = 5 nm.

  9. Cadmium induces Ca2+ mediated, calpain-1/caspase-3-dependent apoptosis in primary cultured rat proximal tubular cells.

    Science.gov (United States)

    Wang, Hong; Zhai, Nianhui; Chen, Ying; Xu, Haibin; Huang, Kehe

    2017-07-01

    Calcium, as a ubiquitous second messenger, governs a large array of cellular processes and is necessary for cell survival. More recently, it was observed that the cytosolic Ca 2+ concentration ([Ca 2+ ] c ) elevation could induce apoptosis in primary cultured rat proximal tubular (rPT) cells exposed to cadmium (Cd), but the concrete mechanism is still unclear. This study was designed to investigate the signal pathway involved in [Ca 2+ ] c elevation-mediated apoptosis. The results confirmed the elevation of [Ca 2+ ] c by confocal microscopy and enhancement of the apoptosis by Hoechst 33258 staining and flow cytometer when rPT cells were exposed to Cd for 12h. Then we demonstrated that Cd enhanced the protein levels of active calpain-1 and caspase-3 in rPT cells. Pretreatment with a cytosolic Ca 2+ chelator, 1,2-Bis (2-aminophenoxy) ethane-N,N,N',N'-tetraacetic acid acetoxymethyl ester (BAPTA-AM), markedly blocked the up-regulation of active calpain-1 and caspase-3 and inhibited the apoptosis induced by Cd. Further, rPT cells were pretreated with a cell-permeable selective calpain-1 inhibitor, 3-(4-iodophenyl)-2-mercapto-(Z)-2-propenoic acid (PD150606) and caspase-3 inhibitor, N-Acetyl-Asp-Glu-Val-Asp-CHO (Ac-DEVD-CHO), respectively. PD150606 significantly attenuated the up-regulation of active caspase-3 and the apoptosis induced by Cd. As expected, inhibition of active caspase-3 by Ac-DEVD-CHO decreased the apoptosis induced by Cd. Taken together, it could be concluded that [Ca 2+ ] c elevation did act as a pro-apoptotic signal in Cd-induced cytotoxicity of rPT cells, triggered calpain-1 and caspase-3 activation in turn, and induced apoptosis of rPT cells. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. Thioaluminogermanate M(AlS2)(GeS2)4 (M = Na, Ag, Cu): Synthesis, Crystal Structures, Characterization, Ion-Exchange and Solid-State 27Al and 23Na NMR Spectroscopy

    KAUST Repository

    Alahmary, Fatimah S.

    2018-03-14

    The new thioaluminogermanate Na(AlS2)(GeS2)4 (1) was successfully synthesized by a direct combination reaction. The compound crystallizes in the monoclinic space group P21/n (no. 14) with unit cell parameters a = 6.803(3) Å, b = 38.207(2) Å, c = 6.947(4) Å, and β = 119.17(3)°. The crystal structure is composed of a [(AlS2)(GeS2)4]− 3D polyanionic network, in which Al and Ge atoms share the atomic positions and Na cations occupy the channels and voids formed by the connection of (Ge/Al)S4 tetrahedra. The title compound shows a cation-exchange property with monovalent Ag+ and Cu+ ions at room temperature in solvent media, resulting in the formation of the isostructural compounds Ag(AlS2)(GeS2)4 (2) and Cu(AlS2)(GeS2)4 (3), respectively. The ion-exchange products Ag(AlS2)(GeS2)4 (2) and Cu(AlS2)(GeS2)4 (3) show higher air stability and narrower bandgap energies compared to those of the parent compound Na(AlS2)(GeS2)4 (1).

  11. Thioaluminogermanate M(AlS2)(GeS2)4 (M = Na, Ag, Cu): Synthesis, Crystal Structures, Characterization, Ion-Exchange and Solid-State 27Al and 23Na NMR Spectroscopy

    KAUST Repository

    Alahmary, Fatimah S.; Davaasuren, Bambar; Emwas, Abdul-Hamid M.; Rothenberger, Alexander

    2018-01-01

    The new thioaluminogermanate Na(AlS2)(GeS2)4 (1) was successfully synthesized by a direct combination reaction. The compound crystallizes in the monoclinic space group P21/n (no. 14) with unit cell parameters a = 6.803(3) Å, b = 38.207(2) Å, c = 6.947(4) Å, and β = 119.17(3)°. The crystal structure is composed of a [(AlS2)(GeS2)4]− 3D polyanionic network, in which Al and Ge atoms share the atomic positions and Na cations occupy the channels and voids formed by the connection of (Ge/Al)S4 tetrahedra. The title compound shows a cation-exchange property with monovalent Ag+ and Cu+ ions at room temperature in solvent media, resulting in the formation of the isostructural compounds Ag(AlS2)(GeS2)4 (2) and Cu(AlS2)(GeS2)4 (3), respectively. The ion-exchange products Ag(AlS2)(GeS2)4 (2) and Cu(AlS2)(GeS2)4 (3) show higher air stability and narrower bandgap energies compared to those of the parent compound Na(AlS2)(GeS2)4 (1).

  12. Observation of the D, E and delta mesons in π-p interactions at 12 and 15 GeV/c

    International Nuclear Information System (INIS)

    Corden, M.J.; Dowell, J.D.; Garvey, J.; Jobes, M.; Kenyon, I.R.; Mawson, J.; McMahon, T.J.; Corbett, I.F.; Esterling, R.J.; Lipman, N.H.; Litchfield, P.J.; Sumorok, K.C.T.O.; Bellamy, E.H.; Green, M.G.; Harnew, N.; Lister, J.B.; Lister, J.R.; Robertson, A.W.; Stacey, B.J.; Strong, J.A.; Thomas, D.H.

    1978-01-01

    The authors have observed the D(1285), E(1420) and delta(975) mesons produced in 12 and 15 GeV/c π - p interactions at the CERN Omega Spectrometer. Production cross sections and decay branching ratios are presented. Analysis of the decay D(1285)→delta(975)π favours a spin-parity assignment of 1 + . (Auth.)

  13. High-biomass C4 grasses-Filling the yield gap.

    Science.gov (United States)

    Mullet, John E

    2017-08-01

    A significant increase in agricultural productivity will be required by 2050 to meet the needs of an expanding and rapidly developing world population, without allocating more land and water resources to agriculture, and despite slowing rates of grain yield improvement. This review examines the proposition that high-biomass C 4 grasses could help fill the yield gap. High-biomass C 4 grasses exhibit high yield due to C 4 photosynthesis, long growth duration, and efficient capture and utilization of light, water, and nutrients. These C 4 grasses exhibit high levels of drought tolerance during their long vegetative growth phase ideal for crops grown in water-limited regions of agricultural production. The stems of some high-biomass C 4 grasses can accumulate high levels of non-structural carbohydrates that could be engineered to enhance biomass yield and utility as feedstocks for animals and biofuels production. The regulatory pathway that delays flowering of high-biomass C 4 grasses in long days has been elucidated enabling production and deployment of hybrids. Crop and landscape-scale modeling predict that utilization of high-biomass C 4 grass crops on land and in regions where water resources limit grain crop yield could increase agricultural productivity. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Inkjet printing as a technique for filling of micro-wells with biocompatible polymers

    DEFF Research Database (Denmark)

    Marizza, Paolo; Keller, Stephan Sylvest; Boisen, Anja

    2013-01-01

    We present an innovative technique to dispense precise amounts of polymer solutions into large arrays of microscopic wells. An inkjet printer (NP 2.1 GeSim, Germany) is used to fill micro-wells with poly (vinyl pyrrolidone) (PVP K10). The micro-wells are fabricated with cavity diameters of 300 μm...

  15. Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

    Science.gov (United States)

    Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

    2018-06-01

    The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

  16. Particle multiplicity distributions in silicon-emulsion collisions at 4.5A GeV/c

    International Nuclear Information System (INIS)

    Liu Fuhu; Abd Allah, Nabil N.; Zhang Donghai; Duan Maiying

    2003-01-01

    The experimental results of particle multiplicity distributions in silicon-emulsion collisions at 4.5A GeV/c (the Dubna synchrophasotron momentum) are reported. The correlations between the multiplicities of target fragments are given. The saturation effect of target black fragment multiplicity in the collisions is observed

  17. Elliptic flow of electrons from heavy-flavor hadron decays in Au + Au collisions at √{sN N}=200 , 62.4, and 39 GeV

    Science.gov (United States)

    Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Ajitanand, N. N.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bai, X.; Bairathi, V.; Behera, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chankova-Bunzarova, N.; Chatterjee, A.; Chattopadhyay, S.; Chen, X.; Chen, J. H.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Federicova, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, S.; Gupta, A.; Guryn, W.; Hamad, A. I.; Hamed, A.; Harlenderova, A.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Horvat, S.; Huang, H. Z.; Huang, X.; Huang, B.; Huang, T.; Humanic, T. J.; Huo, P.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kisel, I.; Kisiel, A.; Kochenda, L.; Kocmanek, M.; Kollegger, T.; Kosarzewski, L. K.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kulathunga, N.; Kumar, L.; Kvapil, J.; Kwasizur, J. H.; Lacey, R.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, X.; Li, C.; Li, Y.; Li, W.; Lidrych, J.; Lin, T.; Lisa, M. A.; Liu, P.; Liu, Y.; Liu, F.; Liu, H.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Luo, S.; Ma, Y. G.; Ma, L.; Ma, R.; Ma, G. L.; Magdy, N.; Majka, R.; Mallick, D.; Margetis, S.; Markert, C.; Matis, H. S.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mizuno, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nie, M.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pile, P.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Poskanzer, A. M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Salur, S.; Sandweiss, J.; Saur, M.; Schambach, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Schweid, B. R.; Seger, J.; Sergeeva, M.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, M. K.; Sharma, A.; Shen, W. Q.; Shi, Z.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, Y.; Sun, X. M.; Sun, X.; Surrow, B.; Svirida, D. N.; Tang, A. H.; Tang, Z.; Taranenko, A.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, G.; Wang, Y.; Wang, F.; Wang, Y.; Webb, J. C.; Webb, G.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, W.; Xie, G.; Xu, J.; Xu, N.; Xu, Q. H.; Xu, W.; Xu, Y. F.; Xu, Z.; Yang, Y.; Yang, Q.; Yang, C.; Yang, S.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, Z.; Zhang, X. P.; Zhang, J. B.; Zhang, S.; Zhang, J.; Zhang, Y.; Zhang, J.; Zhang, S.; Zhao, J.; Zhong, C.; Zhou, L.; Zhou, C.; Zhu, X.; Zhu, Z.; Zyzak, M.; STAR Collaboration

    2017-03-01

    We present measurements of elliptic flow (v2) of electrons from the decays of heavy-flavor hadrons (eHF) by the STAR experiment. For Au+Au collisions at √{sN N}=200 GeV we report v2, for transverse momentum (pT) between 0.2 and 7 GeV /c , using three methods: the event plane method (v2{EP } ), two-particle correlations (v2{2 } ), and four-particle correlations (v2{4 } ). For Au+Au collisions at √{sN N}=62.4 and 39 GeV we report v2{2 } for pT<2 GeV /c . v2{2 } and v2{4 } are nonzero at low and intermediate pT at 200 GeV, and v2{2 } is consistent with zero at low pT at other energies. The v2{2 } at the two lower beam energies is systematically lower than at √{sN N}=200 GeV for pT<1 GeV /c . This difference may suggest that charm quarks interact less strongly with the surrounding nuclear matter at those two lower energies compared to √{sN N}=200 GeV.

  18. Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

    International Nuclear Information System (INIS)

    Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

    2012-01-01

    Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

  19. Preparation and investigation of [GeSe4]100-xIx glasses as promising materials for infrared fiber sensors

    Science.gov (United States)

    Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Plekhovich, A. D.; Kotereva, T. V.; Snopatin, G. E.; Gerasimenko, V. V.; Pushkin, A. A.

    2016-10-01

    The glasses of [GeSe4]100-xIx (x = 1, 3, 5, 8, 10) compositions are prepared; their thermal properties, transparency in the mid-IR range and stability against crystallization are investigated. The glass transition temperature (Tg) in this system decreases monotonically with increasing iodine content from the value of Tg = 176 °C at x = 1 to Tg = 129 °C at x = 10. It has been determined by X-ray diffraction method that the addition of iodine reduces the volume fraction of the crystalline phase in glasses after annealing at 350 °C. Using a single crucible technique, the rod of [GeSe4]95I5 glass was drawn into a single-index fiber of 300 μm diameter and 10 m length. The optical losses were 2-3 dB/m in the spectral range 2.5-8 μm; the minimum optical losses were 1.7 dB/m at a wavelength of 5.5 μm. The content of impurity hydrogen in the form of Se-H in the fiber was about 3.6 ppm(wt), impurity oxygen in the form of Ge-O is 1 ppm(wt). The possibility of use of such [GeSe4]95I5 glass single-index fiber for infrared analysis of liquids by example of crude oil and water solutions of acetone has been demonstrated.

  20. Measurement of hadron and lepton pair production at 161 GeV < $\\sqrt{s}$ < 172 GeV at LEP

    CERN Document Server

    Acciarri, M; Aguilar-Benítez, M; Ahlen, S P; Alcaraz, J; Alemanni, G; Allaby, James V; Aloisio, A; Alverson, G; Alviggi, M G; Ambrosi, G; Anderhub, H; Andreev, V P; Angelescu, T; Anselmo, F; Arefev, A; Azemoon, T; Aziz, T; Bagnaia, P; Baksay, L; Banerjee, S; Banerjee, Sw; Banicz, K; Barczyk, A; Barillère, R; Barone, L; Bartalini, P; Baschirotto, A; Basile, M; Battiston, R; Bay, A; Becattini, F; Becker, U; Behner, F; Berdugo, J; Berges, P; Bertucci, B; Betev, B L; Bhattacharya, S; Biasini, M; Biland, A; Bilei, G M; Blaising, J J; Blyth, S C; Bobbink, Gerjan J; Böck, R K; Böhm, A; Boldizsar, L; Borgia, B; Bourilkov, D; Bourquin, Maurice; Braccini, S; Branson, J G; Brigljevic, V; Brock, I C; Buffini, A; Buijs, A; Burger, J D; Burger, W J; Busenitz, J K; Button, A M; Cai, X D; Campanelli, M; Capell, M; Cara Romeo, G; Carlino, G; Cartacci, A M; Casaus, J; Castellini, G; Cavallari, F; Cavallo, N; Cecchi, C; Cerrada-Canales, M; Cesaroni, F; Chamizo-Llatas, M; Chang, Y H; Chaturvedi, U K; Chekanov, S V; Chemarin, M; Chen, A; Chen, G; Chen, G M; Chen, H F; Chen, H S; Chéreau, X J; Chiefari, G; Chien, C Y; Cifarelli, Luisa; Cindolo, F; Civinini, C; Clare, I; Clare, R; Cohn, H O; Coignet, G; Colijn, A P; Colino, N; Commichau, V; Costantini, S; Cotorobai, F; de la Cruz, B; Csilling, Akos; Dai, T S; D'Alessandro, R; De Asmundis, R; Degré, A; Deiters, K; Della Volpe, D; Denes, P; De Notaristefani, F; DiBitonto, Daryl; Diemoz, M; Van Dierendonck, D N; Di Lodovico, F; Dionisi, C; Dittmar, Michael; Dominguez, A; Doria, A; Dova, M T; Duchesneau, D; Duinker, P; Durán, I; Dutta, S; Easo, S; Efremenko, Yu V; El-Mamouni, H; Engler, A; Eppling, F J; Erné, F C; Ernenwein, J P; Extermann, Pierre; Fabre, M; Faccini, R; Falciano, S; Favara, A; Fay, J; Fedin, O; Felcini, Marta; Fenyi, B; Ferguson, T; Ferroni, F; Fesefeldt, H S; Fiandrini, E; Field, J H; Filthaut, Frank; Fisher, P H; Fisk, I; Forconi, G; Fredj, L; Freudenreich, Klaus; Furetta, C; Galaktionov, Yu; Ganguli, S N; García-Abia, P; Gau, S S; Gentile, S; Gheordanescu, N; Giagu, S; Goldfarb, S; Goldstein, J; Gong, Z F; Gougas, Andreas; Gratta, Giorgio; Grünewald, M W; Gupta, V K; Gurtu, A; Gutay, L J; Hartmann, B; Hasan, A; Hatzifotiadou, D; Hebbeker, T; Hervé, A; Van Hoek, W C; Hofer, H; Hong, S J; Hoorani, H; Hou, S R; Hu, G; Innocente, Vincenzo; Jenkes, K; Jin, B N; Jones, L W; de Jong, P; Josa-Mutuberria, I; Kasser, A; Khan, R A; Kamrad, D; Kamyshkov, Yu A; Kapustinsky, J S; Karyotakis, Yu; Kaur, M; Kienzle-Focacci, M N; Kim, D; Kim, D H; Kim, J K; Kim, S C; Kim, Y G; Kinnison, W W; Kirkby, A; Kirkby, D; Kirkby, Jasper; Kiss, D; Kittel, E W; Klimentov, A; König, A C; Kopp, A; Korolko, I; Koutsenko, V F; Krämer, R W; Krenz, W; Kunin, A; Ladrón de Guevara, P; Laktineh, I; Landi, G; Lapoint, C; Lassila-Perini, K M; Laurikainen, P; Lebeau, M; Lebedev, A; Lebrun, P; Lecomte, P; Lecoq, P; Le Coultre, P; Le Goff, J M; Leiste, R; Leonardi, E; Levchenko, P M; Li Chuan; Lin, C H; Lin, W T; Linde, Frank L; Lista, L; Liu, Z A; Lohmann, W; Longo, E; Lu, W; Lü, Y S; Lübelsmeyer, K; Luci, C; Luckey, D; Luminari, L; Lustermann, W; Ma Wen Gan; Maity, M; Majumder, G; Malgeri, L; Malinin, A; Maña, C; Mangeol, D J J; Mangla, S; Marchesini, P A; Marin, A; Martin, J P; Marzano, F; Massaro, G G G; McNally, D; McNeil, R R; Mele, S; Merola, L; Meschini, M; Metzger, W J; Von der Mey, M; Mi, Y; Mihul, A; Van Mil, A J W; Mirabelli, G; Mnich, J; Molnár, P; Monteleoni, B; Moore, R; Morganti, S; Moulik, T; Mount, R; Müller, S; Muheim, F; Muijs, A J M; Nahn, S; Napolitano, M; Nessi-Tedaldi, F; Newman, H; Niessen, T; Nippe, A; Nisati, A; Nowak, H; Oh, Yu D; Opitz, H; Organtini, G; Ostonen, R; Palomares, C; Pandoulas, D; Paoletti, S; Paolucci, P; Park, H K; Park, I H; Pascale, G; Passaleva, G; Patricelli, S; Paul, T; Pauluzzi, M; Paus, C; Pauss, Felicitas; Peach, D; Pei, Y J; Pensotti, S; Perret-Gallix, D; Petersen, B; Petrak, S; Pevsner, A; Piccolo, D; Pieri, M; Pinto, J C; Piroué, P A; Pistolesi, E; Plyaskin, V; Pohl, M; Pozhidaev, V; Postema, H; Produit, N; Prokofev, D; Prokofiev, D O; Rahal-Callot, G; Raja, N; Rancoita, P G; Rattaggi, M; Raven, G; Razis, P A; Read, K; Ren, D; Rescigno, M; Reucroft, S; Van Rhee, T; Riemann, S; Riles, K; Robohm, A; Rodin, J; Roe, B P; Romero, L; Rosier-Lees, S; Rosselet, P; Van Rossum, W; Roth, S; Rubio, Juan Antonio; Ruschmeier, D; Rykaczewski, H; Salicio, J; Sánchez, E; Sanders, M P; Sarakinos, M E; Sarkar, S; Sassowsky, M; Sauvage, G; Schäfer, C; Shchegelskii, V; Schmidt-Kärst, S; Schmitz, D; Schmitz, P; Scholz, N; Schopper, Herwig Franz; Schotanus, D J; Schultze, K; Schwenke, J; Schwering, G; Sciacca, C; Sciarrino, D; Servoli, L; Shevchenko, S; Shivarov, N; Shoutko, V; Shukla, J; Shumilov, E; Shvorob, A V; Siedenburg, T; Son, D; Sopczak, André; Smith, B; Spillantini, P; Steuer, M; Stickland, D P; Stone, A; Stone, H; Stoyanov, B; Strässner,