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Sample records for fets field-effect transistors

  1. Analysis of long-channel nanotube field-effect-transistors (NT FETs)

    Science.gov (United States)

    Toshishige, Yamada; Kwak, Dochan (Technical Monitor)

    2001-01-01

    This viewgraph presentation provides an analysis of long-channel nanotube (NT) field effect transistors (FET) from NASA's Ames Research Center. The structure of such a transistor including the electrode contact, 1D junction, and the planar junction is outlined. Also mentioned are various characteristics of a nanotube tip-equipped scanning tunnel microscope (STM).

  2. The Development and Study of Molecular Electronic Switches and their Field-Effect Transistor (FET) Device Properties

    Science.gov (United States)

    2015-02-27

    used in molecular switches, electro- and photochromatic materials, field-effect transistors (FETs), OLEDs, and photovoltaic and solar cells . We are...materials that have interesting properties as photovoltaic or materials suitable in field-effect transistor (FET). (a) Papers published in peer-reviewed...effect transistors (FETs), electrochromic materials and solar cells . The goal of this research project is to synthesize fluorene- and perylene-based

  3. A simple model for atomic layer doped field-effect transistor (ALD-FET) electronic states

    International Nuclear Information System (INIS)

    Mora R, M.E.; Gaggero S, L.M.

    1998-01-01

    We propose a simple potential model based on the Thomas-Fermi approximation to reproduce the main properties of the electronic structure of an atomic layer doped field effect transistor. Preliminary numerical results for a Si-based ALD-FET justify why bound electronic states are not observed in the experiment. (Author)

  4. A simple ionizing radiation spectrometer/dosimeter based on radiation sensing field effect transistors (RadFETs)

    International Nuclear Information System (INIS)

    Moreno, D.J.; Hughes, R.C.; Jenkins, M.W.; Drumm, C.R.

    1997-01-01

    This paper reports on the processing steps in a silicon foundry leading to improved performance of the Radiation Sensing Field Effect Transistor (RadFET) and the use of multiple RadFETs in a handheld, battery operated, combination spectrometer/dosimeter

  5. Top-down nanofabrication of silicon nanoribbon field effect transistor (Si-NR FET) for carcinoembryonic antigen detection.

    Science.gov (United States)

    Bao, Zengtao; Sun, Jialin; Zhao, Xiaoqian; Li, Zengyao; Cui, Songkui; Meng, Qingyang; Zhang, Ye; Wang, Tong; Jiang, Yanfeng

    2017-01-01

    Sensitive and quantitative detection of tumor markers is highly required in the clinic for cancer diagnosis and consequent treatment. A field-effect transistor-based (FET-based) nanobiosensor emerges with characteristics of being label-free, real-time, having high sensitivity, and providing direct electrical readout for detection of biomarkers. In this paper, a top-down approach is proposed and implemented to fulfill a novel silicon nano-ribbon FET, which acts as biomarker sensor for future clinical application. Compared with the bottom-up approach, a top-down fabrication approach can confine width and length of the silicon FET precisely to control its electrical properties. The silicon nanoribbon (Si-NR) transistor is fabricated on a Silicon-on-Insulator (SOI) substrate by a top-down approach with complementary metal oxide semiconductor (CMOS)-compatible technology. After the preparation, the surface of Si-NR is functionalized with 3-aminopropyltriethoxysilane (APTES). Glutaraldehyde is utilized to bind the amino terminals of APTES and antibody on the surface. Finally, a microfluidic channel is integrated on the top of the device, acting as a flowing channel for the carcinoembryonic antigen (CEA) solution. The Si-NR FET is 120 nm in width and 25 nm in height, with ambipolar electrical characteristics. A logarithmic relationship between the changing ratio of the current and the CEA concentration is measured in the range of 0.1-100 ng/mL. The sensitivity of detection is measured as 10 pg/mL. The top-down fabricated biochip shows feasibility in direct detecting of CEA with the benefits of real-time, low cost, and high sensitivity as a promising biosensor for tumor early diagnosis.

  6. Extended-gate field-effect transistor (EG-FET) with molecularly imprinted polymer (MIP) film for selective inosine determination.

    Science.gov (United States)

    Iskierko, Zofia; Sosnowska, Marta; Sharma, Piyush Sindhu; Benincori, Tiziana; D'Souza, Francis; Kaminska, Izabela; Fronc, Krzysztof; Noworyta, Krzysztof

    2015-12-15

    A novel recognition unit of chemical sensor for selective determination of the inosine, renal disfunction biomarker, was devised and prepared. For that purpose, inosine-templated molecularly imprinted polymer (MIP) film was deposited on an extended-gate field-effect transistor (EG-FET) signal transducing unit. The MIP film was prepared by electrochemical polymerization of bis(bithiophene) derivatives bearing cytosine and boronic acid substituents, in the presence of the inosine template and a thiophene cross-linker. After MIP film deposition, the template was removed, and was confirmed by UV-visible spectroscopy. Subsequently, the film composition was characterized by spectroscopic techniques, and its morphology and thickness were determined by AFM. The finally MIP film-coated extended-gate field-effect transistor (EG-FET) was used for signal transduction. This combination is not widely studied in the literature, despite the fact that it allows for facile integration of electrodeposited MIP film with FET transducer. The linear dynamic concentration range of the chemosensor was 0.5-50 μM with inosine detectability of 0.62 μM. The obtained detectability compares well to the levels of the inosine in body fluids which are in the range 0-2.9 µM for patients with diagnosed diabetic nephropathy, gout or hyperuricemia, and can reach 25 µM in certain cases. The imprinting factor for inosine, determined from piezomicrogravimetric experiments with use of the MIP film-coated quartz crystal resonator, was found to be 5.5. Higher selectivity for inosine with respect to common interferents was also achieved with the present molecularly engineered sensing element. The obtained analytical parameters of the devised chemosensor allow for its use for practical sample measurements. Copyright © 2015 Elsevier B.V. All rights reserved.

  7. Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs

    Directory of Open Access Journals (Sweden)

    Jeong-S. Moon

    2013-07-01

    Full Text Available This paper investigates total ionizing dose (TID effects in top-gated epitaxial graphene field-effect-transistors (GFETs. Measurements reveal voltage shifts in the current-voltage (I-V characteristics and degradation of carrier mobility and minimum conductivity, consistent with the buildup of oxide-trapped charges. A semi-empirical approach for modeling radiation-induced degradation in GFETs effective carrier mobility is described in the paper. The modeling approach describes Coulomb and short-range scattering based on calculations of charge and effective vertical field that incorporate radiation-induced oxide trapped charges. The transition from the dominant scattering mechanism is correctly described as a function of effective field and oxide trapped charge density. Comparison with experimental data results in good qualitative agreement when including an empirical component to account for scatterer transparency in the low field regime.

  8. Bipolar-FET combinational power transistors for power conversion applications

    Science.gov (United States)

    Chen, D. Y.; Chin, S. A.

    1984-01-01

    Four bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT).

  9. pH-sensitive diamond field-effect transistors (FETs) with directly aminated channel surface

    International Nuclear Information System (INIS)

    Song, Kwang-Soup; Nakamura, Yusuke; Sasaki, Yuichi; Degawa, Munenori; Yang, Jung-Hoon; Kawarada, Hiroshi

    2006-01-01

    We have introduced pH sensors fabricated on diamond thin films through modification of the surface-terminated atom. We directly modified the diamond surface from hydrogen to amine or oxygen with ultraviolet (UV) irradiation under ammonia gas. The quantified amine site based on the spectra obtained by X-ray photoelectron spectroscopy (XPS) is 26% (2.6 x 10 14 cm -2 ) with UV irradiation for 8 h and its coverage is dependent on the UV irradiation time. This directly aminated diamond surface is stable with long-term exposure in air and electrolyte solution. We fabricated diamond solution-gate field-effect transistors (SGFETs) without insulating layers on the channel surface. These diamond SGFETs with amine modified by direct amination are sensitive to pH (45 mV/pH) over a wide range from pH 2 to 12 and their sensitivity is dependent on the density of binding sites corresponding to UV irradiation time on the channel surface

  10. Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

    Science.gov (United States)

    Es-Sakhi, Azzedin D.

    Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the

  11. Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film.

    Science.gov (United States)

    Sonmez, Bedri Gurkan; Ertop, Ozan; Mutlu, Senol

    2017-09-22

    We introduced a novel water-gated field effect transistor (WG-FET) which uses 16-nm-thick mono-Si film as active layer. WG-FET devices use electrical double layer (EDL) as gate insulator and operate under 1 V without causing any electrochemical reactions. Performance parameters based on voltage distribution on EDL are extracted and current-voltage relations are modelled. Both probe- and planar-gate WG-FETs with insulated and uninsulated source-drain electrodes are simulated, fabricated and tested. Best on/off ratios are measured for probe-gate devices as 23,000 A/A and 85,000 A/A with insulated and uninsulated source-drain electrodes, respectively. Planar-gate devices with source-drain insulation had inferior on/off ratio of 1,100 A/A with 600 μm gate distance and it decreased to 45 A/A when gate distance is increased to 3000 μm. Without source-drain electrode insulation, proper transistor operation is not obtained with planar-gate devices. All measurement results were in agreement with theoretical models. WG-FET is a promising device platform for microfluidic applications where sensors and read-out circuits can be integrated at transistor level.

  12. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  13. On device architectures, subthreshold swing, and power consumption of the piezoelectric field-effect transistor (π-FET)

    NARCIS (Netherlands)

    Hueting, Raymond Josephus Engelbart; van Hemert, T.; Kaleli, B.; Wolters, Robertus A.M.; Schmitz, Jurriaan

    2015-01-01

    This paper describes the potential of tunable strain in field-effect transistors to boost performance of digital logic. Voltage-controlled strain can be imposed on a semiconductor body by the integration of a piezoelectric material improving transistor performance. In this paper, we derive the

  14. Effect of human serum on the electrical detection of amyloid-β fibrils in biological environments using azo-dye immobilized field effect transistor (FET biosensor

    Directory of Open Access Journals (Sweden)

    Sho Hideshima

    2018-02-01

    Full Text Available As amyloid-β peptide 1–42 (Aβ42 was found to be an emerging and important biomarker for Alzheimer's disease, the detection of this peptide in biological samples such as human serum (HS has become very important for evaluating the potential disease state and determining the appropriate treatment. In this study, we developed an electrical analysis strategy based on a field effect transistor (FET biosensor as a simple and reliable technique for confirming the presence of Aβ42 aggregates (fibrils in biological samples. By utilizing Congo red immobilized on the FET gate surface as a biorecognition element, we observed remarkable sensitivity and specificity for detecting Aβ42 fibrils. Furthermore, we optimized the procedure to minimize the interference of abundant human serum albumin for the detection system using HS samples. The optimized system of Congo red-immobilized FET enables measurement of Aβ42 fibrils in the 100-pM level in HS samples, which is lower than its clinical concentration. The FET device can be applied as a biosensing system for mass and routine screening of peptide biomarkers related to Alzheimer's disease.

  15. Field Effect Transistor in Nanoscale

    Science.gov (United States)

    2017-04-26

    significant alteration in transport behaviour of these molecular junctions. 15. SUBJECT TERMS Theory , Nanoscale, Field Effect Transistor (FET), Devices...Density Functional Theory (DFT), Non-equilibrium Green Function 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER OF PAGES     13...Keep in mind the amount of funding you received relative to the amount of effort you put into the report. References: 1. J. R. Heath and M

  16. Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)

    Science.gov (United States)

    Bayani, Amir Hossein; Voves, Jan; Dideban, Daryoosh

    2018-01-01

    Here, we compare the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET) with 2.36 nm2 square cross-section area using tight-binding (TB) sp3d5s∗ model (full atomistic model (FAM)) and effective mass approximation (EMA). Synopsys/QuantumWise Atomistix ToolKit (ATK) and Silvaco Atlas3D are used to consider the TB model and EMA, respectively. Results show that EMA predicted only one quantum state (QS) for quantum transport, whereas FAM predicted three QSs. A cosine function behavior is obtained by both methods for the first quantum state. The calculated bandgap value by EMA is almost twice smaller than that of the FAM. Also, a fluctuating current is predicted by both methods but in different oscillation values.

  17. Ambipolar phosphorene field effect transistor.

    Science.gov (United States)

    Das, Saptarshi; Demarteau, Marcel; Roelofs, Andreas

    2014-11-25

    In this article, we demonstrate enhanced electron and hole transport in few-layer phosphorene field effect transistors (FETs) using titanium as the source/drain contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect mobility values were extracted to be ∼38 cm(2)/Vs for electrons and ∼172 cm(2)/Vs for the holes. On the basis of our experimental data, we also comprehensively discuss how the contact resistances arising due to the Schottky barriers at the source and the drain end effect the different regime of the device characteristics and ultimately limit the ON state performance. We also propose and implement a novel technique for extracting the transport gap as well as the Schottky barrier height at the metal-phosphorene contact interface from the ambipolar transfer characteristics of the phosphorene FETs. This robust technique is applicable to any ultrathin body semiconductor which demonstrates symmetric ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, chemical doping free, and fully complementary logic inverter based on ambipolar phosphorene FETs.

  18. Graphene-based field-effect transistor biosensors

    Science.gov (United States)

    Chen; , Junhong; Mao, Shun; Lu, Ganhua

    2017-06-14

    The disclosure provides a field-effect transistor (FET)-based biosensor and uses thereof. In particular, to FET-based biosensors using thermally reduced graphene-based sheets as a conducting channel decorated with nanoparticle-biomolecule conjugates. The present disclosure also relates to FET-based biosensors using metal nitride/graphene hybrid sheets. The disclosure provides a method for detecting a target biomolecule in a sample using the FET-based biosensor described herein.

  19. Functional organic field-effect transistors.

    Science.gov (United States)

    Guo, Yunlong; Yu, Gui; Liu, Yunqi

    2010-10-25

    Functional organic field-effect transistors (OFETs) have attracted increasing attention in the past few years due to their wide variety of potential applications. Research on functional OFETs underpins future advances in organic electronics. In this review, different types of functional OFETs including organic phototransistors, organic memory FETs, organic light emitting FETs, sensors based on OFETs and other functional OFETs are introduced. In order to provide a comprehensive overview of this field, the history, current status of research, main challenges and prospects for functional OFETs are all discussed.

  20. Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

    NARCIS (Netherlands)

    Nishiguchi, K.; Yamaguchi, H.; Fujiwara, A.; Van der Zant, H.S.J.; Steele, G.A.

    2013-01-01

    We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET

  1. Vertically Integrated Multiple Nanowire Field Effect Transistor.

    Science.gov (United States)

    Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Park, Jun-Young; Bang, Tewook; Jeon, Seung-Bae; Hur, Jae; Lee, Dongil; Choi, Yang-Kyu

    2015-12-09

    A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use of wet etching. The driving current is increased by 5-fold due to the inherent vertically stacked five-level nanowires, thus showing good feasibility of three-dimensional integration-based high performance transistor. The developed fabrication process, which is simple and reproducible, is used to create multiple stiction-free and uniformly sized nanowires with the aid of the one-route all-dry etching process (ORADEP). Furthermore, the proposed FET is revamped to create nonvolatile memory with the adoption of a charge trapping layer for enhanced practicality. Thus, this research suggests an ultimate design for the end-of-the-roadmap devices to overcome the limits of scaling.

  2. Ambipolar Phosphorene Field Effect Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Das, Saptarshi [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States; Demarteau, Marcel [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States; Roelofs, Andreas [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States

    2014-10-23

    Two dimensional materials provide an intriguing platform to investigate rich physical phenomena which could ultimately lead to the development of innovative nanotechnologies (1-17). Semiconducting black phosphorous (BP) with high carrier mobility (18-20), anisotropic transport (21, 22) and tunable bandgap (23, 24) is the most recent addition to this exotic class of two dimensional materials. In this article we experimentally demonstrate room temperature quasi ballistic transport of both holes and electrons in ionic liquid gated black phosphorous (BP) field effect transistors (FET) with sub-100nm channel length. The carrier mean free path (mfp) was found to be 15nm for the holes and 5nm for the electrons. By improving the carrier injection through superior electrostatic gate control (EOT=1.5nm), highly symmetric ambipolar conduction with record high hole current of ~0.78mA/µm and electron current of ~0.68mA/µm are achieved for VDD=0.2V. The extracted record low contact resistance of 220Ω-µm is similar to the state of the art Si technology. This is also the best contact resistance value achieved for any two dimensional metal-semiconductor interfaces. Finally, we provide an analytical framework to compare the experimental results with ballistic simulations which includes quantum capacitance considerations.

  3. Nanowire field effect transistors principles and applications

    CERN Document Server

    Jeong, Yoon-Ha

    2014-01-01

    “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

  4. Organic semiconductors for organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yoshiro Yamashita

    2009-01-01

    Full Text Available The advantages of organic field-effect transistors (OFETs, such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed.

  5. Physics of organic ferroelectric field-effect transistors

    NARCIS (Netherlands)

    Brondijk, J.J.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model

  6. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  7. Top- and side-gated epitaxial graphene field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xuebin; Wu, Xiaosong; Sprinkle, Mike; Ming, Fan; Ruan, Ming; Hu, Yike; De Heer, Walt A. [Georgia Institute of Technology, School of Physics, Atlanta, GA (United States); Berger, Claire [Georgia Institute of Technology, School of Physics, Atlanta, GA (United States); CNRS-Institut Neel, Grenoble (France)

    2010-02-15

    Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm{sup 2}/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side-gate FET structures are promising. Conductivity (left panel) and transport resistances {rho}{sub xx} and {rho}{sub xy} of a top gate graphene Hall bar on SiC Si-face, showing a sign reversal of the hall coefficient at the resistance peak. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  8. Electromechanical field effect transistors based on multilayer phosphorene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Z.T., E-mail: jiangzhaotan@hotmail.com; Lv, Z.T.; Zhang, X.D.

    2017-06-21

    Based on the tight-binding Hamiltonian approach, we demonstrate that the electromechanical field effect transistors (FETs) can be realized by using the multilayer phosphorene nanoribbons (PNRs). The synergistic combination of the electric field and the external strains can establish the on–off switching since the electric field can shift or split the energy band, and the mechanical strains can widen or narrow the band widths. This kind of multilayer PNR FETs, much solider than the monolayer PNR one and more easily biased by different electric fields, has more transport channels consequently leading to the higher on–off current ratio or the higher sensitivity to the electric fields. Meanwhile, the strain-induced band-flattening will be beneficial for improving the flexibility in designing the electromechanical FETs. In addition, such electromechanical FETs can act as strain-controlled FETs or mechanical detectors for detecting the strains, indicating their potential applications in nano- and micro-electromechanical fields. - Highlights: • Electromechanical transistors are designed with multilayer phosphorene nanoribbons. • Electromechanical synergistic effect can establish the on–off switching more flexibly. • Multilayer transistors, solider and more easily biased, has more transport channels. • Electromechanical transistors can act as strain-controlled transistors or mechanical detectors.

  9. Electromechanical field effect transistors based on multilayer phosphorene nanoribbons

    Science.gov (United States)

    Jiang, Z. T.; Lv, Z. T.; Zhang, X. D.

    2017-06-01

    Based on the tight-binding Hamiltonian approach, we demonstrate that the electromechanical field effect transistors (FETs) can be realized by using the multilayer phosphorene nanoribbons (PNRs). The synergistic combination of the electric field and the external strains can establish the on-off switching since the electric field can shift or split the energy band, and the mechanical strains can widen or narrow the band widths. This kind of multilayer PNR FETs, much solider than the monolayer PNR one and more easily biased by different electric fields, has more transport channels consequently leading to the higher on-off current ratio or the higher sensitivity to the electric fields. Meanwhile, the strain-induced band-flattening will be beneficial for improving the flexibility in designing the electromechanical FETs. In addition, such electromechanical FETs can act as strain-controlled FETs or mechanical detectors for detecting the strains, indicating their potential applications in nano- and micro-electromechanical fields.

  10. Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

    OpenAIRE

    Sylvia, Somaia Sarwat

    2014-01-01

    The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling cu...

  11. Recent Trends in Field-Effect Transistors-Based Immunosensors

    Directory of Open Access Journals (Sweden)

    Ana Carolina Mazarin de Moraes

    2016-10-01

    Full Text Available Immunosensors are analytical platforms that detect specific antigen-antibody interactions and play an important role in a wide range of applications in biomedical clinical diagnosis, food safety, and monitoring contaminants in the environment. Field-effect transistors (FET immunosensors have been developed as promising alternatives to conventional immunoassays, which require complicated processes and long-time data acquisition. The electrical signal of FET-based immunosensors is generated as a result of the antigen-antibody conjugation. FET biosensors present real-time and rapid response, require small sample volume, and exhibit higher sensitivity and selectivity. This review brings an overview on the recent literature of FET-based immunosensors, highlighting a diversity of nanomaterials modified with specific receptors as immunosensing platforms for the ultrasensitive detection of various biomolecules.

  12. Intrinsic noise in aggressively scaled field-effect transistors

    International Nuclear Information System (INIS)

    Albareda, G; Jiménez, D; Oriols, X

    2009-01-01

    According to roadmap projections, nanoscale field-effect transistors (FETs) with channel lengths below 30 nm and several gates (for improving their gate control over the source–drain conductance) will come to the market in the next few years. However, few studies deal with the noise performance of these aggressively scaled FETs. In this work, a study of the effect of the intrinsic (thermal and shot) noise of such FETs on the performance of an analog amplifier and a digital inverter is carried out by means of numerical simulations with a powerful Monte Carlo (quantum) simulator. The numerical data indicate important drawbacks in the noise performance of aggressively scaled FETs that could invalidate roadmap projections as regards analog and digital applications

  13. Temperature dependent properties of InSb and InAs nanowire field-effect transistors

    Science.gov (United States)

    Nilsson, Henrik A.; Caroff, Philippe; Thelander, Claes; Lind, Erik; Karlström, Olov; Wernersson, Lars-Erik

    2010-04-01

    We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.

  14. IC Compatible Wafer Level Fabrication of Silicon Nanowire Field Effect Transistors for Biosensing Applications

    NARCIS (Netherlands)

    Moh, T.S.Y.

    2013-01-01

    In biosensing, nano-devices such as Silicon Nanowire Field Effect Transistors (SiNW FETs) are promising components/sensors for ultra-high sensitive detection, especially when samples are low in concentration or a limited volume is available. Current processing of SiNW FETs often relies on expensive

  15. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa

    2015-12-29

    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  16. Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

    Science.gov (United States)

    Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

    2018-04-01

    We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

  17. Nanowire Field-Effect Transistors : Sensing Simplicity?

    NARCIS (Netherlands)

    Mescher, M.

    2014-01-01

    Silicon nanowires are structures made from silicon with at least one spatial dimension in the nanometer regime (1-100 nm). From these nanowires, silicon nanowire field-effect transistors can be constructed. Since their introduction in 2001 silicon nanowire field-effect transistors have been studied

  18. Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

    Science.gov (United States)

    Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

    2001-01-01

    A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

  19. Organic tunnel field effect transistors

    KAUST Repository

    Tietze, Max Lutz

    2017-06-29

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.

  20. Direct coupled amplifiers using field effect transistors

    International Nuclear Information System (INIS)

    Fowler, E.P.

    1964-03-01

    The concept of the uni-polar field effect transistor (P.E.T.) was known before the invention of the bi-polar transistor but it is only recently that they have been made commercially. Being produced as yet only in small quantities, their price imposes a restriction on use to circuits where their peculiar properties can be exploited to the full. One such application is described here where the combination of low voltage drift and relatively low input leakage current are necessarily used together. One of the instruments used to control nuclear reactors has a logarithmic response to the mean output current from a polarised ionisation chamber. The logarithmic signal is then differentiated electrically, the result being displayed on a meter calibrated to show the reactor divergence or doubling time. If displayed in doubling time the scale is calibrated reciprocally. Because of the wide range obtained in the logarithmic section and the limited supply voltage, an output of 1 volt per decade change in ionisation current is used. Differentiating this gives a current of 1.5 x 10 -8 A for p.s.D. (20 sec. doubling time) in the differentiating amplifier. To overcome some of the problems of noise due to statistical variations in input current, the circuit design necessitates a resistive path to ground at the amplifier input of 20 M.ohms. A schematic diagram is shown. 1. It is evident that a zero drift of 1% can be caused by a leakage current of 1.5 x 10 -10 A or an offset voltage of 3 mV at the amplifier input. Although the presently used electrometer valve is satisfactory from the point of view of grid current, there have been sudden changes in grid to grid voltage (the valve is a double triode) of up to 10 m.V. It has been found that a pair of F.E.T's. can be used to replace the electrometer valve so long as care is taken in correct balance of the two devices. An investigation has been made into the characteristics of some fourteen devices to see whether those with very

  1. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

    Science.gov (United States)

    Zafar, Sufi; Lu, Minhua; Jagtiani, Ashish

    2017-01-01

    Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements show that the transducer choice significantly impacts the electrochemical sensor characteristics. Signal to noise ratio is 20 to 2 times greater for the BJT sensor. Sensitivity is also enhanced: BJT sensing signal changes by 10 times per pCl, whereas the FET signal changes by 8 or less times. Also, sensor calibration curves are impacted by the transducer choice. Unlike a FET sensor, the calibration curve of the BJT sensor is independent of applied voltages. Hence, a BJT sensor can make quantitative sensing measurements with minimal calibration requirements, an important characteristic for mobile sensing applications. As a demonstration for mobile applications, these BJT sensors are further investigated by measuring chloride levels in artificial human sweat for potential cystic fibrosis diagnostic use. In summary, the BJT device is demonstrated to be a superior transducer in comparison to a FET in an electrochemical sensor.

  2. A Micro-Machined Microphone Based on a Combination of Electret and Field-Effect Transistor.

    Science.gov (United States)

    Shin, Kumjae; Jeon, Junsik; West, James Edward; Moon, Wonkyu

    2015-08-18

    Capacitive-type transduction is now widely used in MEMS microphones. However, its sensitivity decreases with reducing size, due to decreasing air gap capacitance. In the present study, we proposed and developed the Electret Gate of Field Effect Transistor (ElGoFET) transduction based on an electret and FET (field-effect-transistor) as a novel mechanism of MEMS microphone transduction. The ElGoFET transduction has the advantage that the sensitivity is dependent on the ratio of capacitance components in the transduction structure. Hence, ElGoFET transduction has high sensitivity even with a smaller air gap capacitance, due to a miniaturization of the transducer. A FET with a floating-gate electrode embedded on a membrane was designed and fabricated and an electret was fabricated by ion implantation with Ga(+) ions. During the assembly process between the FET and the electret, the operating point of the FET was characterized using the static response of the FET induced by the electric field due to the trapped positive charge at the electret. Additionally, we evaluated the microphone performance of the ElGoFET by measuring the acoustic response in air using a semi-anechoic room. The results confirmed that the proposed transduction mechanism has potential for microphone applications.

  3. A Micro-Machined Microphone Based on a Combination of Electret and Field-Effect Transistor

    Directory of Open Access Journals (Sweden)

    Kumjae Shin

    2015-08-01

    Full Text Available Capacitive-type transduction is now widely used in MEMS microphones. However, its sensitivity decreases with reducing size, due to decreasing air gap capacitance. In the present study, we proposed and developed the Electret Gate of Field Effect Transistor (ElGoFET transduction based on an electret and FET (field-effect-transistor as a novel mechanism of MEMS microphone transduction. The ElGoFET transduction has the advantage that the sensitivity is dependent on the ratio of capacitance components in the transduction structure. Hence, ElGoFET transduction has high sensitivity even with a smaller air gap capacitance, due to a miniaturization of the transducer. A FET with a floating-gate electrode embedded on a membrane was designed and fabricated and an electret was fabricated by ion implantation with Ga+ ions. During the assembly process between the FET and the electret, the operating point of the FET was characterized using the static response of the FET induced by the electric field due to the trapped positive charge at the electret. Additionally, we evaluated the microphone performance of the ElGoFET by measuring the acoustic response in air using a semi-anechoic room. The results confirmed that the proposed transduction mechanism has potential for microphone applications.

  4. Field-effect transistor memories based on ferroelectric polymers

    Science.gov (United States)

    Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

    2017-11-01

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

  5. Graphene Field Effect Transistors for Radiation Detection

    Data.gov (United States)

    National Aeronautics and Space Administration — This is propose to develop Graphene Field Effect Transistor based Radiation Sensors (GFET-RS) for NASA Manned Spaceflight Missions anticipated in next several...

  6. Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors

    DEFF Research Database (Denmark)

    Sandberg, H.G.O.; Frey, G.L.; Shkunov, M.N.

    2002-01-01

    Ultrathin films of regioregular poly(3-hexyl thiophene) (RR-P3HT) were deposited through a dip-coating technique and utilized as the semiconducting film in field-effect transistors (FETs). Proper selection of the substrate and solution concentration enabled the growth of a monolayer-thick RR-P3HT...... film. Atomic force microscopy (AFM), U-V-vis absorption spectroscopy, X-ray reflectivity, and grazing incidence diffraction were used to study the growth mechanism, thickness and orientation of self-organized monolayer thick RR-P3HT films on SiO2 surfaces. Films were found to adopt a Stranski...

  7. Transient nature of negative capacitance in ferroelectric field-effect transistors

    Science.gov (United States)

    Ng, Kwok; Hillenius, Steven J.; Gruverman, Alexei

    2017-10-01

    Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper, we discuss the implications of the transient nature of negative capacitance for its practical application. It is suggested that the NC effect needs to be characterized at the proper time scale to identify the type of circuits where functional NC-FETs can be used effectively.

  8. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  9. Electrical coupling of single cardiac rat myocytes to field-effect and bipolar transistors.

    Science.gov (United States)

    Kind, Thomas; Issing, Matthias; Arnold, Rüdiger; Müller, Bernt

    2002-12-01

    A novel bipolar transistor for extracellular recording the electrical activity of biological cells is presented, and the electrical behavior compared with the field-effect transistor (FET). Electrical coupling is examined between single cells separated from the heart of adults rats (cardiac myocytes) and both types of transistors. To initiate a local extracellular voltage, the cells are periodically stimulated by a patch pipette in voltage clamp and current clamp mode. The local extracellular voltage is measured by the planar integrated electronic sensors: the bipolar and the FET. The small signal transistor currents correspond to the local extracellular voltage. The two types of sensor transistors used here were developed and manufactured in the laboratory of our institute. The manufacturing process and the interfaces between myocytes and transistors are described. The recordings are interpreted by way of simulation based on the point-contact model and the single cardiac myocyte model.

  10. Potential of carbon nanotube field effect transistors for analogue circuits

    KAUST Repository

    Hayat, Khizar

    2013-05-11

    This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET\\'s potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

  11. Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

    Science.gov (United States)

    Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

    2017-11-07

    This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

  12. Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

    Directory of Open Access Journals (Sweden)

    Yu-Ru Lin

    2017-11-01

    Full Text Available This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs. The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A, subthreshold slope (186 mV/dec., and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

  13. Characteristic Variations of Graphene Field-Effect Transistors Induced by CF4 Gas

    Science.gov (United States)

    Park, Jaehoon; Park, Kun-Sik; Jeong, Ye-Sul; Baek, Kyu-Ha; Kuk Lee, Bong; Kim, Dong-Pyo; Ryu, Jin-Hwa; Do, Lee-Mi; Imamura, Hiroshi; Yase, Kiyoshi; Choi, Jong Sun

    2012-08-01

    The influence of tetrafluoromethane (CF4) gas on the electrical characteristics of monolithic graphene field-effect transistors (FETs) is reported. Compared with the results in nitrogen ambient, FETs in CF4 ambient exhibit a positive shift in the Dirac point voltage and an increase in drain current. These changes are ascribed to the electronegative nature of the fluorine atoms in CF4 gas, which is found to induce p-type doping and excess charge carriers in graphene. The electrical response to CF4 gas exposure demonstrates the feasibility of using monolithic graphene FETs as chemical sensors.

  14. Ternary logic implemented on a single dopant atom field effect silicon transistor

    NARCIS (Netherlands)

    Klein, M.; Mol, J.A.; Verduijn, J.; Lansbergen, G.P.; Rogge, S.; Levine, R.D.; Remacle, F.

    2010-01-01

    We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through

  15. Graphene Field Effect Transistor for Radiation Detection

    Science.gov (United States)

    Li, Mary J. (Inventor); Chen, Zhihong (Inventor)

    2016-01-01

    The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

  16. High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization.

    Science.gov (United States)

    Fu, W; Nef, C; Tarasov, A; Wipf, M; Stoop, R; Knopfmacher, O; Weiss, M; Calame, M; Schönenberger, C

    2013-12-21

    Noncovalent functionalization is a well-known nondestructive process for property engineering of carbon nanostructures, including carbon nanotubes and graphene. However, it is not clear to what extend the extraordinary electrical properties of these carbon materials can be preserved during the process. Here, we demonstrated that noncovalent functionalization can indeed delivery graphene field-effect transistors (FET) with fully preserved mobility. In addition, these high-mobility graphene transistors can serve as a promising platform for biochemical sensing applications.

  17. A scanning probe mounted on a field-effect transistor: Characterization of ion damage in Si.

    Science.gov (United States)

    Shin, Kumjae; Lee, Hoontaek; Sung, Min; Lee, Sang Hoon; Shin, Hyunjung; Moon, Wonkyu

    2017-10-01

    We have examined the capabilities of a Tip-On-Gate of Field-Effect Transistor (ToGoFET) probe for characterization of FIB-induced damage in Si surface. A ToGoFET probe is the SPM probe which the Field Effect Transistor(FET) is embedded at the end of a cantilever and a Pt tip was mounted at the gate of FET. The ToGoFET probe can detect the surface electrical properties by measuring source-drain current directly modulated by the charge on the tip. In this study, a Si specimen whose surface was processed with Ga+ ion beam was prepared. Irradiation and implantation with Ga+ ions induce highly localized modifications to the contact potential. The FET embedded on ToGoFET probe detected the surface electric field profile generated by schottky contact between the Pt tip and the sample surface. Experimentally, it was shown that significant differences of electric field due to the contact potential barrier in differently processed specimens were observed using ToGOFET probe. This result shows the potential that the local contact potential difference can be measured by simple working principle with high sensitivity. Copyright © 2017 Elsevier Ltd. All rights reserved.

  18. Fundamentals of nanoscaled field effect transistors

    CERN Document Server

    Chaudhry, Amit

    2013-01-01

    Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.

  19. Germanium field-effect transistor made from a high-purity substrate

    International Nuclear Information System (INIS)

    Hansen, W.L.; Goulding, F.S.; Haller, E.E.

    1978-11-01

    Field effect transistors have been fabricated on high-purity germanium substrates using low-temperature technology. The aim of this work is to preserve the low density of trapping centers in high-quality starting material by low-temperature ( 0 C) processing. The use of germanium promises to eliminate some of the traps which cause generation-recombination noise in silicon field-effect transistors (FET's) at low temperatures. Typically, the transconductance (g/sub m/) in the germanium FET's is 10 mA/V and the gate leakage can be less than 10 -12 A. Present devices exhibit a large 1/f noise component and most of this noise must be eliminated if they are to be competitive with silicon FET's commonly used in high-resolution nuclear spectrometers

  20. Cylindrical Field Effect Transistor: A Full Volume Inversion Device

    KAUST Repository

    Fahad, Hossain M.

    2010-12-01

    The increasing demand for high performance as well as low standby power devices has been the main reason for the aggressive scaling of conventional CMOS transistors. Current devices are at the 32nm technology node. However, due to physical limitations as well as increase in short-channel effects, leakage, power dissipation, this scaling trend cannot continue and will eventually hit a barrier. In order to overcome this, alternate device topologies have to be considered altogether. Extensive research on ultra thin body double gate FETs and gate all around nanowire FETs has shown a lot of promise. Under strong inversion, these devices have demonstrated increased performance over their bulk counterparts. This is mainly attributed to full carrier inversion in the body. However, these devices are still limited by lithographic and processing challenges making them unsuitable for commercial production. This thesis explores a unique device structure called the CFET (Cylindrical Field Effect Transistors) which also like the above, relies on complete inversion of carriers in the body/bulk. Using dual gates; an outer and an inner gate, full-volume inversion is possible with benefits such as enhanced drive currents, high Ion/Ioff ratios and reduced short channel effects.

  1. Dielectric Engineered Tunnel Field-Effect Transistor

    OpenAIRE

    Ilatikhameneh, Hesameddin; Ameen, Tarek A.; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib

    2015-01-01

    The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface stat...

  2. Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Ping Feng

    2014-09-01

    Full Text Available One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed.

  3. Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

    Science.gov (United States)

    Ko, Eunah; Shin, Jaemin; Shin, Changhwan

    2018-01-01

    Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance FET), in which a threshold selector is added to an electrode (e.g., source or drain) of conventional field effect transistor. Although the concept of the aforementioned two devices was presented more or less recently, numerous studies have been published. In this review paper, by reviewing the published studies over the last decade, we shall de-brief and discuss the history and the future perspectives of NCFET/phase FET, respectively. The background, experimental investigation, and future direction for developing the aforementioned two representative steep switching devices (i.e., NCFET and phase FET/negative resistance FET) are to be discussed in detail.

  4. Planar graphene tunnel field-effect transistor

    OpenAIRE

    Katkov, V. L.; Osipov, V. A.

    2013-01-01

    We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.

  5. Biomolecular detection using a metal semiconductor field effect transistor

    Science.gov (United States)

    Estephan, Elias; Saab, Marie-Belle; Buzatu, Petre; Aulombard, Roger; Cuisinier, Frédéric J. G.; Gergely, Csilla; Cloitre, Thierry

    2010-04-01

    In this work, our attention was drawn towards developing affinity-based electrical biosensors, using a MESFET (Metal Semiconductor Field Effect Transistor). Semiconductor (SC) surfaces must be prepared before the incubations with biomolecules. The peptides route was adapted to exceed and bypass the limits revealed by other types of surface modification due to the unwanted unspecific interactions. As these peptides reveal specific recognition of materials, then controlled functionalization can be achieved. Peptides were produced by phage display technology using a library of M13 bacteriophage. After several rounds of bio-panning, the phages presenting affinities for GaAs SC were isolated; the DNA of these specific phages were sequenced, and the peptide with the highest affinity was synthesized and biotinylated. To explore the possibility of electrical detection, the MESFET fabricated with the GaAs SC were used to detect the streptavidin via the biotinylated peptide in the presence of the bovine Serum Albumin. After each surface modification step, the IDS (current between the drain and the source) of the transistor was measured and a decrease in the intensity was detected. Furthermore, fluorescent microscopy was used in order to prove the specificity of this peptide and the specific localisation of biomolecules. In conclusion, the feasibility of producing an electrical biosensor using a MESFET has been demonstrated. Controlled placement, specific localization and detection of biomolecules on a MESFET transistor were achieved without covering the drain and the source. This method of functionalization and detection can be of great utility for biosensing application opening a new way for developing bioFETs (Biomolecular Field-Effect Transistor).

  6. Potential of carbon nanotube field effect transistors for analogue circuits

    Directory of Open Access Journals (Sweden)

    Khizar Hayat

    2013-11-01

    Full Text Available This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs and metal oxide semiconductor field effect transistors (MOSFETs with special focus on carbon nanotube FET's potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g(m, f(T and f(max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

  7. Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?

    KAUST Repository

    Fahad, Hossain M.

    2012-06-27

    Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation.

  8. Modeling nanowire and double-gate junctionless field-effect transistors

    CERN Document Server

    Jazaeri, Farzan

    2018-01-01

    The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

  9. Field Effect Transistor Biosensor Using Antigen Binding Fragment for Detecting Tumor Marker in Human Serum

    Science.gov (United States)

    Cheng, Shanshan; Hotani, Kaori; Hideshima, Sho; Kuroiwa, Shigeki; Nakanishi, Takuya; Hashimoto, Masahiro; Mori, Yasuro; Osaka, Tetsuya

    2014-01-01

    Detection of tumor markers is important for cancer diagnosis. Field-effect transistors (FETs) are a promising method for the label-free detection of trace amounts of biomolecules. However, detection of electrically charged proteins using antibody-immobilized FETs is limited by ionic screening by the large probe molecules adsorbed to the transistor gate surface, reducing sensor responsiveness. Here, we investigated the effect of probe molecule size on the detection of a tumor marker, α-fetoprotein (AFP) using a FET biosensor. We demonstrated that the small receptor antigen binding fragment (Fab), immobilized on a sensing surface as small as 2–3 nm, offers a higher degree of sensitivity and a wider concentration range (100 pg/mL–1 μg/mL) for the FET detection of AFP in buffer solution, compared to the whole antibody. Therefore, the use of a small Fab probe molecule instead of a whole antibody is shown to be effective for improving the sensitivity of AFP detection in FET biosensors. Furthermore, we also demonstrated that a Fab-immobilized FET subjected to a blocking treatment, to avoid non-specific interactions, could sensitively and selectively detect AFP in human serum. PMID:28788579

  10. The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

    International Nuclear Information System (INIS)

    Hellings, Geert; Hikavyy, Andriy; Mitard, Jerome; Witters, Liesbeth; Benbakhti, Brahim; Alian, AliReza; Waldron, Niamh; Bender, Hugo; Eneman, Geert; Krom, Raymond; Schulze, Andreas; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Meuris, Marc; Hoffmann, Thomas; De Meyer, Kristin

    2012-01-01

    The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures. The Implant-Free architecture fully utilizes the band offsets between different materials, whereby charge carriers are effectively confined to a thin channel layer. This prevents sub-surface source/drain leakage observed in classical bulk Metal-Oxide-Semiconductor FETs at small gate lengths. An investigation of the V T -tuning capabilities of this technology reveals sensitivity to both well doping and bulk voltage.

  11. Solution-processed organic field-effect transistors based on dinaphthothienothiophene precursor with chemically modified electrodes

    Science.gov (United States)

    Nagase, Takashi; Abe, Souichiro; Kobayashi, Takashi; Kimura, Yu; Hamaguchi, Azusa; Ikeda, Yoshinori; Naito, Hiroyoshi

    2017-11-01

    Bottom-gate organic field-effect transistors (OFETs) based on a soluble precursor of dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT) with bottom-contact source-drain electrodes chemically modified with pentafluorobenzenethiol (PFBT) have been fabricated. The preparation of DNTT films using CYTOP overcoat layers allows the solution processing of bottom-gate/bottom-contact DNTT FETs with good electrical contacts between the PFBT-treated Au electrodes and the DNTT molecules. The DNTT FETs processed using CYTOP overcoat layers exhibit the field-effect mobilities of up to 0.37 cm2 V‑1 s‑1. High maximum mobility of 0.29 cm2 V‑1 s‑1 has been achieved in solution-processed DNTT FETs with channel length of 5 μm.

  12. Field effect transistors based on phosphorene nanoribbon with selective edge-adsorption: A first-principles study

    Science.gov (United States)

    Hu, Mengli; Yang, Zhixiong; Zhou, Wenzhe; Li, Aolin; Pan, Jiangling; Ouyang, Fangping

    2018-04-01

    By using density functional theory (DFT) and nonequilibrium Green's function (NEGF), field effect transistor (FET) based on zigzag shaped phosphorene nanoribbons (ZPNR) are investigated. The FETs are constructed with bare-edged ZPNRs as electrodes and H, Cl or OH adsorbed ZPNRs as channel. It is found FETs with the three kinds of channel show similar transport properties. The FET is p-type with a maximum current on/off ratio of 104 and a minimum off-current of 1 nA. The working mode of FETs is dependent on the parity of channel length. It can be either enhancement mode or depletion mode and the off-state current shows an even-odd oscillation. The current oscillations are interpreted with density of states (DOS) analysis and methods of evolution operator and tight-binding Hamiltonian. Operating mechanism of the designed FETs is also presented with projected local density of states and band diagrams.

  13. Construction and evaluation of photovoltaic power generation and power storage system using SiC field-effect transistor inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Koichi; Yasuda, Masashi; Ohishi, Yuya; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2016-02-01

    A power storage system using spherical silicon (Si) solar cells, maximum power point tracking charge controller, lithium-ion battery and a direct current-alternating current (DC-AC) inverter was constructed. Performance evaluation of the DC-AC inverter was carried out, and the DC-AC conversion efficiencies of the SiC field-effect transistor (FET) inverter was improved compared with those of the ordinary Si-FET based inverter.

  14. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

    Science.gov (United States)

    Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.

    2018-04-01

    Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

  15. A Single Polyaniline Nanofiber Field Effect Transistor and Its Gas Sensing Mechanisms

    Science.gov (United States)

    Chen, Dajing; Lei, Sheng; Chen, Yuquan

    2011-01-01

    A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. We studied the morphology, field effect characteristics and gas sensitivity of conductive nanofibers. The fibers showed Schottky and Ohmic contacts based on different electrode materials. Higher applied gate voltage contributes to an increase in gas sensitivity. The nanofiber transistor showed a 7% reversible resistance change to 1 ppm NH3 with 10 V gate voltage. The FET characteristics of the sensor when exposed to different gas concentrations indicate that adsorption of NH3 molecules reduces the carrier mobility in the polyaniline nanofiber. As such, nanofiber-based sensors could be promising for environmental and industrial applications. PMID:22163969

  16. Graphene Field Effect Transistors for Biomedical Applications: Current Status and Future Prospects

    Directory of Open Access Journals (Sweden)

    Rhiannan Forsyth

    2017-07-01

    Full Text Available Since the discovery of the two-dimensional (2D carbon material, graphene, just over a decade ago, the development of graphene-based field effect transistors (G-FETs has become a widely researched area, particularly for use in point-of-care biomedical applications. G-FETs are particularly attractive as next generation bioelectronics due to their mass-scalability and low cost of the technology’s manufacture. Furthermore, G-FETs offer the potential to complete label-free, rapid, and highly sensitive analysis coupled with a high sample throughput. These properties, coupled with the potential for integration into portable instrumentation, contribute to G-FETs’ suitability for point-of-care diagnostics. This review focuses on elucidating the recent developments in the field of G-FET sensors that act on a bioaffinity basis, whereby a binding event between a bioreceptor and the target analyte is transduced into an electrical signal at the G-FET surface. Recognizing and quantifying these target analytes accurately and reliably is essential in diagnosing many diseases, therefore it is vital to design the G-FET with care. Taking into account some limitations of the sensor platform, such as Debye–Hükel screening and device surface area, is fundamental in developing improved bioelectronics for applications in the clinical setting. This review highlights some efforts undertaken in facing these limitations in order to bring G-FET development for biomedical applications forward.

  17. Pressure Sensitive Insulated Gate Field Effect Transistor

    Science.gov (United States)

    Suminto, James Tjan-Meng

    A pressure sensitive insulated gate field effect transistor has been developed. The device is an elevated gate field-effect-transistor. It consists of a p-type silicon substrate in which two n^+ region, the source and drain, are formed. The gate electrode is a metal film sandwiched in an insulated micro-diaphragm resembling a pill-box which covers the gate oxide, drain, and source. The space between the gate electrode and the oxide is vacuum or an air-gap. When pressure is applied on the diaphragm it deflects and causes a change in the gate capacitance, and thus modulates the conductance of the channel between source and drain. A general theory dealing with the characteristic of this pressure sensitive insulated gate field effect transistor has been derived, and the device fabricated. The fabrication process utilizes the standard integrated circuit fabrication method. It features a batch fabrication of field effect devices followed by the batch fabrication of the deposited diaphragm on top of each field effect device. The keys steps of the diaphragm fabrication are the formation of spacer layer, formation of the diaphragm layer, and the subsequent removal of the spacer layer. The chip size of the device is 600 μm x 1050 mum. The diaphragm size is 200 μm x 200 mum. Characterization of the device has been performed. The current-voltage characteristics with pressure as parameters have been demonstrated and the current-pressure transfer curves obtained. They show non-linear characteristics as those of conventional capacitive pressure sensors. The linearity of threshold voltage versus pressure transfer curves has been demonstrated. The temperature effect on the device performances has been tested. The temperature coefficient of threshold voltage, rather than the electron mobility, has dominated the temperature coefficient of the device. Two temperature compensation schemes have been tested: one method is by connecting two identical PSIGFET in a differential amplifier

  18. Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

    OpenAIRE

    Kang, Seok Ju; Lee, Gwan-Hyoung; Yu, Young-Jun; Zhao, Yue; Kim, Bumjung; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Kim, Philip; Nuckolls, Colin

    2014-01-01

    Enhancing the device performance of single crystal organic field effect transistors (OFETs) requires both optimized engineering of efficient injection of the carriers through the contact and improvement of the dielectric interface for reduction of traps and scattering centers. Since the accumulation and flow of charge carriers in operating organic FETs takes place in the first few layers of the semiconductor next to the dielectric, the mobility can be easily degraded by surface roughness, cha...

  19. Silicon junctionless field effect transistors as room temperature terahertz detectors

    Science.gov (United States)

    Marczewski, J.; Knap, W.; Tomaszewski, D.; Zaborowski, M.; Zagrajek, P.

    2015-09-01

    Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that the junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.

  20. Novel Organic Field Effect Transistors via Nano-Modification

    National Research Council Canada - National Science Library

    Wen, Ten-Chin; Chou, Wei-Yang; Guo, Tzung-Fang; Wang, Yeong-Her

    2005-01-01

    .... The performance of organic FETs is determined primarily by the field effect mobility of the carriers in the organic semiconductor layers and by the efficiency of injecting and extracting carriers...

  1. Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

    Science.gov (United States)

    Khayer, M. Abul; Lake, Roger K.

    2010-11-01

    The real and imaginary bandstructures of deeply scaled GaN nanowire (NW) field-effect transistors (FETs) are calculated with an eight-band k ṡp model. Analysis of the transport properties of both GaN NW FETs and NW band-to-band tunneling FETs (TFETs) is presented. Deeply scaled n-type GaN NW FETs operate in the classical capacitance limit (CCL) in stead of operating in the quantum capacitance limit. This is a result of the high electron effective mass and high density of states. We discuss how the CCL operation of these devices affect the device performance. For the GaN NW FETs, within a source Fermi level of 0.2 eV, the current density varies from 5 to 8.5 A/mm. For the GaN TFETs, we present analysis on the effect of NW diameter on the on-currents, the off-currents, and the required electric fields. We show that a drive current of ˜0.05 A/mm can be achieved for the GaN NW TFETs. These devices show potential for high-speed and high-power applications.

  2. Individual SWCNT based ionic field effect transistor

    Science.gov (United States)

    Pang, Pei; He, Jin; Park, Jae Hyun; Krstic, Predrag; Lindsay, Stuart

    2011-03-01

    Here we report that the ionic current through a single-walled carbon nanotube (SWCNT) can be effectively gated by a perpendicular electrical field from a top gate electrode, working as ionic field effect transistor. Both our experiment and simulation confirms that the electroosmotic current (EOF) is the main component in the ionic current through the SWCNT and is responsible for the gating effect. We also studied the gating efficiency as a function of solution concentration and pH and demonstrated that the device can work effectively in the physiological relevant condition. This work opens the door to use CNT based nanofluidics for ion and molecule manipulation. This work was supported by the DNA Sequencing Technology Program of the National Human Genome Research Institute (1RC2HG005625-01, 1R21HG004770-01), Arizona Technology Enterprises and the Biodesign Institute.

  3. Antiferromagnetic Spin Wave Field-Effect Transistor

    Science.gov (United States)

    Cheng, Ran; Daniels, Matthew W.; Zhu, Jian-Gang; Xiao, Di

    2016-01-01

    In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale. PMID:27048928

  4. Modeling quantization effects in field effect transistors

    CERN Document Server

    Troger, C

    2001-01-01

    Numerical simulation in the field of semiconductor device development advanced to a valuable, cost-effective and flexible facility. The most widely used simulators are based on classical models, as they need to satisfy time and memory constraints. To improve the performance of field effect transistors such as MOSFETs and HEMTs these devices are continuously scaled down in their dimensions. Consequently the characteristics of such devices are getting more and more determined by quantum mechanical effects arising from strong transversal fields in the channel. In this work an approach based on a two-dimensional electron gas is used to describe the confinement of the carriers. Quantization is considered in one direction only. For the derivation of a one-dimensional Schroedinger equation in the effective mass framework a non-parabolic correction for the energy dispersion due to Kane is included. For each subband a non-parabolic dispersion relation characterized by subband masses and subband non-parabolicity coeffi...

  5. Space charge field effect on light emitting from tetracene field-effect transistor under AC electric field

    Energy Technology Data Exchange (ETDEWEB)

    Ohshima, Yuki; Kohn, Hideki; Manaka, Takaaki [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo, 152-8552 (Japan); Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.j [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo, 152-8552 (Japan)

    2009-11-30

    By applying square wave AC voltage to the Au source electrode of tetracene based field-effect transistor (FET), electroluminescence (EL) was obtained. The results suggest that electrons and holes were injected alternately from the source electrode and recombined each other, and lead to the EL. This type of EL was localized at the interface between the source electrode and tetracene, and enhanced periodically with two relaxation times in accordance with the applied AC voltage cycle. We modeled the carrier behavior in the FET and explained the decay of EL, taking into account the space charge field contribution. Finally, using an AC voltage superposed on DC bias voltage, it was shown that electron injection was prompted only by space charge field.

  6. Toward a very low-power integrated charge preamplifier by using III-V field effect transistors

    International Nuclear Information System (INIS)

    Geronimo, G. de; Longoni, A.

    1998-01-01

    The future high-energy physics experiments, based on the new high-luminosity accelerators, will require a new generation of front-end monolithic electronics characterized, in particular, by high speed and low-power dissipation. In this perspective, the performances of Si and GaAs field effect transistors (FETs) are compared here in conditions of low-power dissipation. The advantages of solutions based on GaAs FETs, in applications requiring fast shaping times, are presented and experimental results are reported. The criteria for the optimum choice of the input transistor dimension and of its bias point are discussed

  7. Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

    Science.gov (United States)

    Sylvia, Somaia Sarwat

    The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling current because of their small direct bandgap. Our simulation results show that although they require highly degenerate source doping to support the high electric fields in the tunnel region, the devices achieve minimum inverse subthreshold slopes of 30 mV/dec. In subthreshold, these devices experience both regimes of voltage-controlled tunneling and cold-carrier injection. Numerical results based on a discretized 8-band k.p model are compared to analytical WKB theory. For both regular FETs and TFETs, direct channel tunneling dominates the leakage current when the physical gate length is reduced to 5 nm. Therefore, a survey of materials is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The tunneling effective mass gives the best indication of the relative size of the tunnel currents. Si gives the lowest overall tunnel current for both the conduction and valence band and, therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. Our numerical simulation shows that the finite number, random placement, and discrete nature of the dopants in the source of an InAs nanowire (NW) TFET affect both the mean value and the variance of the drive current and the inverse subthreshold slope. The discrete doping model gives an average drive current and an inverse subthreshold slope that are less than those predicted from the homogeneous doping model. The doping density required to achieve a target drive current is

  8. All-carbon-based field effect transistors fabricated by aerosol jet printing on flexible substrates

    International Nuclear Information System (INIS)

    Liu, Rui; Shen, Fangping; Ding, Haiyan; Gu, Wen; Zhang, Ting; Lin, Jian; Cui, Zheng

    2013-01-01

    An all-carbon-based field effect transistor (FET) was fabricated on flexible polyethylene terephthalate substrates by the aerosol jet printing method described in this paper. Three different types of homogeneous conductive inks were made and then printed layer-by-layer to form the FET chips. The conducting-reduced graphene oxide was used as electrodes (source and drain) and channel, respectively. Graphene oxide was used as dielectrics while multi-walled carbon nanotubes acted as the gate electrode. The all-carbon-based FET shows a good mobility of 350 cm 2 (V s) –1 at a drain bias of −1 V. This simple and novel method explores a promising way to fabricate all-carbon-based, flexible and low-cost electronic devices. (paper)

  9. Biofunctionalized Zinc Oxide Field Effect Transistors for Selective Sensing of Riboflavin with Current Modulation

    Directory of Open Access Journals (Sweden)

    Morley O. Stone

    2011-06-01

    Full Text Available Zinc oxide field effect transistors (ZnO-FET, covalently functionalized with single stranded DNA aptamers, provide a highly selective platform for label-free small molecule sensing. The nanostructured surface morphology of ZnO provides high sensitivity and room temperature deposition allows for a wide array of substrate types. Herein we demonstrate the selective detection of riboflavin down to the pM level in aqueous solution using the negative electrical current response of the ZnO-FET by covalently attaching a riboflavin binding aptamer to the surface. The response of the biofunctionalized ZnO-FET was tuned by attaching a redox tag (ferrocene to the 3’ terminus of the aptamer, resulting in positive current modulation upon exposure to riboflavin down to pM levels.

  10. Applications of interface controlled pulsed-laser deposited polymer films in field-effect transistors

    Science.gov (United States)

    Adil, Danish; Ukah, Ndubuisi; Guha, Suchi; Gupta, Ram; Ghosh, Kartik

    2010-03-01

    Matrix assisted pulsed laser evaporation, a derivative of pulsed laser deposition (PLD), is an alternative method of depositing polymer and biomaterial films that allows homogeneous film coverage of high molecular weight organic materials for layer-by-layer growth without any laser induced damage. Polyfluorene (PF)-based conjugated polymers have attracted considerable attention in organic field-effect transistors (FETs). A co-polymer of PF (PFB) was deposited as a thin film using matrix assisted PLD employing a KrF excimer laser. Electrical characteristics of FETs fabricated using these PLD grown films were compared to those of FETs using spin-coated films. We show that threshold voltages, on/off ratios, and charge carrier motilities are significantly improved in PLD grown films. This is attributed to an improved dielectric-polymer interface.

  11. Impact of substrate on performance of band gap engineered graphene field effect transistor

    Science.gov (United States)

    Tiwari, Durgesh Laxman; Sivasankaran, K.

    2018-01-01

    In this paper, we investigate the graphene field effect transistor (G-FET) to enhance the drain current saturation and to minimize the drain conductance (gd) using numerical simulation. This work focus on suppressing the drain conductance using silicon substrate. We studied the impact of different substrate on the performance of band gap engineered G-FET device. We used a non-equilibrium green function with mode space (NEGF_MS) to model the transport behavior of carriers for 10 nm channel length G-FET device. We compared the drain current saturation of G-FET at higher drain voltage regime on silicon, SiC, and the SiO2 substrate. This paper clearly demonstrates the effect of substrate on an electric field near drain region of G-FET device. It is shown that the substrate of G-FET is not only creating a band gap in graphene, which is important for current saturation and gd minimization, but also selection of suitable substrate can suppress generation of carrier concentration near drain region is also important.

  12. Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors.

    Science.gov (United States)

    Kim, Min Je; Jung, A-Ra; Lee, Myeongjae; Kim, Dongjin; Ro, Suhee; Jin, Seon-Mi; Nguyen, Hieu Dinh; Yang, Jeehye; Lee, Kyung-Koo; Lee, Eunji; Kang, Moon Sung; Kim, Hyunjung; Choi, Jong-Ho; Kim, BongSoo; Cho, Jeong Ho

    2017-11-22

    We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10 7 . The highest hole mobility of 1.51 cm 2 V -1 s -1 and the highest electron mobility of 0.85 cm 2 V -1 s -1 were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

  13. Detection of heart failure-related biomarker in whole blood with graphene field effect transistor biosensor.

    Science.gov (United States)

    Lei, Yong-Min; Xiao, Meng-Meng; Li, Yu-Tao; Xu, Li; Zhang, Hong; Zhang, Zhi-Yong; Zhang, Guo-Jun

    2017-05-15

    Since brain natriuretic peptide (BNP) has become internationally recognized biomarkers in the diagnosis and prognosis of heart failure (HF), it is highly desirable to search for a novel sensing tool for detecting the patient's BNP level at the early stage. Here we report a platinum nanoparticles (PtNPs)-decorated reduced graphene oxide (rGO) field effect transistor (FET) biosensor coupled with a microfilter system for label-free and highly sensitive detection of BNP in whole blood. The PtNPs-decorated rGO FET sensor was obtained by drop-casting rGO onto the pre-fabricated FET chip and subsequently assembling PtNPs on the graphene surface. After anti-BNP was bound to the PtNPs surface, BNP was successfully detected by the anti-BNP immobilized FET biosensor. It was found that the developed FET biosensor was able to achieve a low detection limitation of 100fM. Moreover, BNP was successfully detected in human whole blood sample treated by a custom-made microfilter, suggesting the sensor's capability of working in a complex sample matrix. The developed FET biosensor provides a new sensing platform for protein detection, showing its potential applications in clinic sample. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. A sub k{sub B}T/q semimetal nanowire field effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Ansari, L.; Fagas, G.; Gity, F.; Greer, J. C., E-mail: Jim.Greer@Tyndall.ie [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland)

    2016-08-08

    The key challenge for nanoelectronics technologies is to identify the designs that work on molecular length scales, provide reduced power consumption relative to classical field effect transistors (FETs), and that can be readily integrated at low cost. To this end, a FET is introduced that relies on the quantum effects arising for semimetals patterned with critical dimensions below 5 nm, that intrinsically has lower power requirements due to its better than a “Boltzmann tyranny” limited subthreshold swing (SS) relative to classical field effect devices, eliminates the need to form heterojunctions, and mitigates against the requirement for abrupt doping profiles in the formation of nanowire tunnel FETs. This is achieved through using a nanowire comprised of a single semimetal material while providing the equivalent of a heterojunction structure based on shape engineering to avail of the quantum confinement induced semimetal-to-semiconductor transition. Ab initio calculations combined with a non-equilibrium Green's function formalism for charge transport reveals tunneling behavior in the OFF state and a resonant conduction mechanism for the ON state. A common limitation to tunnel FET (TFET) designs is related to a low current in the ON state. A discussion relating to the semimetal FET design to overcome this limitation while providing less than 60 meV/dec SS at room temperature is provided.

  15. A sub kBT/q semimetal nanowire field effect transistor

    Science.gov (United States)

    Ansari, L.; Fagas, G.; Gity, F.; Greer, J. C.

    2016-08-01

    The key challenge for nanoelectronics technologies is to identify the designs that work on molecular length scales, provide reduced power consumption relative to classical field effect transistors (FETs), and that can be readily integrated at low cost. To this end, a FET is introduced that relies on the quantum effects arising for semimetals patterned with critical dimensions below 5 nm, that intrinsically has lower power requirements due to its better than a "Boltzmann tyranny" limited subthreshold swing (SS) relative to classical field effect devices, eliminates the need to form heterojunctions, and mitigates against the requirement for abrupt doping profiles in the formation of nanowire tunnel FETs. This is achieved through using a nanowire comprised of a single semimetal material while providing the equivalent of a heterojunction structure based on shape engineering to avail of the quantum confinement induced semimetal-to-semiconductor transition. Ab initio calculations combined with a non-equilibrium Green's function formalism for charge transport reveals tunneling behavior in the OFF state and a resonant conduction mechanism for the ON state. A common limitation to tunnel FET (TFET) designs is related to a low current in the ON state. A discussion relating to the semimetal FET design to overcome this limitation while providing less than 60 meV/dec SS at room temperature is provided.

  16. Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

    Science.gov (United States)

    Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

    2015-08-01

    Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively.

  17. Graphene-based field effect transistors for radiation-induced field sensing

    Energy Technology Data Exchange (ETDEWEB)

    Di Gaspare, Alessandra, E-mail: alessandra.digaspare@lnf.infn.it [INFN-Laboratori Nazionali Frascati, Frascati, Rome (Italy); Valletta, Antonio [CNR-Istituto per la Microelettronica e i Microsistemi, TorVergata, Rome (Italy); Fortunato, Guglielmo [CNR-Istituto per la Microelettronica e i Microsistemi, TorVergata, Rome (Italy); INFN-Laboratori Nazionali Frascati, Frascati, Rome (Italy); Larciprete, Rosanna [CNR-Istituto di Sistemi Complessi, TorVergata, Rome (Italy); INFN-Laboratori Nazionali Frascati, Frascati, Rome (Italy); Mariucci, Luigi [CNR-Istituto per la Microelettronica e i Microsistemi, TorVergata, Rome (Italy); INFN-Laboratori Nazionali Frascati, Frascati, Rome (Italy); Notargiacomo, Andrea [CNR-Istituto di Fotonica e Nanotecnologie, Rome (Italy); INFN-Laboratori Nazionali Frascati, Frascati, Rome (Italy); Cimino, Roberto [INFN-Laboratori Nazionali Frascati, Frascati, Rome (Italy); CERN, Geneva (Switzerland)

    2016-07-11

    We propose the implementation of graphene-based field effect transistor (FET) as radiation sensor. In the proposed detector, graphene obtained via chemical vapor deposition is integrated into a Si-based field effect device as the gate readout electrode, able to sense any change in the field distribution induced by ionization in the underneath absorber, because of the strong variation in the graphene conductivity close to the charge neutrality point. Different 2-dimensional layered materials can be envisaged in this kind of device.

  18. Light-emitting ambipolar organic heterostructure field-effect transistor

    NARCIS (Netherlands)

    Rost, Constance; Karg, Siegfried; Riess, Walter; Loi, Maria Antonietta; Murgia, Mauro; Muccini, Michele

    2004-01-01

    We have investigated ambipolar charge injection and transport in organic field-effect transistors (OFETs) as prerequisites for a light-emitting organic field-effect transistor (LEOFET). OFETs containing a single material as active layer generally function either as a p- or an n-channel device.

  19. Intrinsic Charge Transport in Organic Field-Effect Transistors

    Science.gov (United States)

    Podzorov, Vitaly

    2005-03-01

    Organic field-effect transistors (OFETs) are essential components of modern electronics. Despite the rapid progress of organic electronics, understanding of fundamental aspects of the charge transport in organic devices is still lacking. Recently, the OFETs based on highly ordered organic crystals have been fabricated with innovative techniques that preserve the high quality of single-crystal organic surfaces. This technological progress facilitated the study of transport mechanisms in organic semiconductors [1-4]. It has been demonstrated that the intrinsic polaronic transport, not dominated by disorder, with a remarkably high mobility of ``holes'' μ = 20 cm^2/Vs can be achieved in these devices at room temperature [4]. The signatures of the intrinsic polaronic transport are the anisotropy of the carrier mobility and an increase of μ with cooling. These and other aspects of the charge transport in organic single-crystal FETs will be discussed. Co-authors are Etienne Menard, University of Illinois at Urbana Champaign; Valery Kiryukhin, Rutgers University; John Rogers, University of Illinois at Urbana Champaign; Michael Gershenson, Rutgers University. [1] V. Podzorov et al., Appl. Phys. Lett. 82, 1739 (2003); ibid. 83, 3504 (2003). [2] V. C. Sundar et al., Science 303, 1644 (2004). [3] R. W. I. de Boer et al., Phys. Stat. Sol. (a) 201, 1302 (2004). [4] V. Podzorov et al., Phys. Rev. Lett. 93, 086602 (2004).

  20. Spearhead Nanometric Field-Effect Transistor Sensors for Single-Cell Analysis

    Science.gov (United States)

    Córdoba, Ainara López; Ali, Tayyibah; Shevchuk, Andrew; Takahashi, Yasufumi; Novak, Pavel; Edwards, Christopher; Lab, Max; Gopal, Sahana; Chiappini, Ciro; Anand, Uma; Magnani, Luca; Coombes, R. Charles; Gorelik, Julia; Matsue, Tomokazu; Schuhmann, Wolfgang; Klenerman, David; Sviderskaya, Elena V.; Korchev, Yuri

    2016-01-01

    Nanometric field-effect-transistor (FET) sensors are made on the tip of spear-shaped dual carbon nanoelectrodes derived from carbon deposition inside double-barrel nanopipettes. The easy fabrication route allows deposition of semiconductors or conducting polymers to comprise the transistor channel. A channel from electrodeposited poly pyrrole (PPy) exhibits high sensitivity toward pH changes. This property is exploited by immobilizing hexokinase on PPy nano-FETs to give rise to a selective ATP biosensor. Extracellular pH and ATP gradients are key biochemical constituents in the microenvironment of living cells; we monitor their real-time changes in relation to cancer cells and cardiomyocytes. The highly localized detection is possible because of the high aspect ratio and the spear-like design of the nano-FET probes. The accurately positioned nano-FET sensors can detect concentration gradients in three-dimensional space, identify biochemical properties of a single living cell, and after cell membrane penetration perform intracellular measurements. PMID:26816294

  1. Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

    KAUST Repository

    Tian, He

    2014-08-11

    Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.

  2. Nanopore extended field-effect transistor for selective single-molecule biosensing.

    Science.gov (United States)

    Ren, Ren; Zhang, Yanjun; Nadappuram, Binoy Paulose; Akpinar, Bernice; Klenerman, David; Ivanov, Aleksandar P; Edel, Joshua B; Korchev, Yuri

    2017-09-19

    There has been a significant drive to deliver nanotechnological solutions to biosensing, yet there remains an unmet need in the development of biosensors that are affordable, integrated, fast, capable of multiplexed detection, and offer high selectivity for trace analyte detection in biological fluids. Herein, some of these challenges are addressed by designing a new class of nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advantages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry. We report on a polypyrrole functionalized nexFET, with controllable gate voltage that can be used to switch on/off, and slow down single-molecule DNA transport through a nanopore. This strategy enables higher molecular throughput, enhanced signal-to-noise, and even heightened selectivity via functionalization with an embedded receptor. This is shown for selective sensing of an anti-insulin antibody in the presence of its IgG isotype.Efficient detection of single molecules is vital to many biosensing technologies, which require analytical platforms with high selectivity and sensitivity. Ren et al. combine a nanopore sensor and a field-effect transistor, whereby gate voltage mediates DNA and protein transport through the nanopore.

  3. High-performance integrated field-effect transistor-based sensors

    Energy Technology Data Exchange (ETDEWEB)

    Adzhri, R., E-mail: adzhri@gmail.com [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Md Arshad, M.K., E-mail: mohd.khairuddin@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); School of Microelectronic Engineering (SoME), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Gopinath, Subash C.B., E-mail: subash@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); School of Bioprocess Engineering (SBE), Universiti Malaysia Perlis (UniMAP), Arau, Perlis (Malaysia); Ruslinda, A.R., E-mail: ruslinda@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Fathil, M.F.M., E-mail: faris.fathil@gmail.com [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Ayub, R.M., E-mail: ramzan@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Nor, M. Nuzaihan Mohd, E-mail: m.nuzaihan@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Voon, C.H., E-mail: chvoon@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia)

    2016-04-21

    Field-effect transistors (FETs) have succeeded in modern electronics in an era of computers and hand-held applications. Currently, considerable attention has been paid to direct electrical measurements, which work by monitoring changes in intrinsic electrical properties. Further, FET-based sensing systems drastically reduce cost, are compatible with CMOS technology, and ease down-stream applications. Current technologies for sensing applications rely on time-consuming strategies and processes and can only be performed under recommended conditions. To overcome these obstacles, an overview is presented here in which we specifically focus on high-performance FET-based sensor integration with nano-sized materials, which requires understanding the interaction of surface materials with the surrounding environment. Therefore, we present strategies, material depositions, device structures and other characteristics involved in FET-based devices. Special attention was given to silicon and polyaniline nanowires and graphene, which have attracted much interest due to their remarkable properties in sensing applications. - Highlights: • Performance of FET-based biosensors for the detection of biomolecules is presented. • Silicon nanowire, polyaniline and graphene are the highlighted nanoscaled materials as sensing transducers. • The importance of surface material interaction with the surrounding environment is discussed. • Different device structure architectures for ease in fabrication and high sensitivity of sensing are presented.

  4. Current trends in nanomaterial embedded field effect transistor-based biosensor.

    Science.gov (United States)

    Nehra, Anuj; Pal Singh, Krishna

    2015-12-15

    Recently, as metal-, polymer-, and carbon-based biocompatible nanomaterials have been increasingly incorporated into biosensing applications, with various nanostructures having been used to increase the efficacy and sensitivity of most of the detecting devices, including field effect transistor (FET)-based devices. These nanomaterial-based methods also became the ideal for the amalgamation of biomolecules, especially for the fabrication of ultrasensitive, low-cost, and robust FET-based biosensors; these are categorically very successful at binding the target specified entities in the confined gated micro-region for high functionality. Furthermore, the contemplation of nanomaterial-based FET biosensors to various applications encompasses the desire for detection of many targets with high selectivity, and specificity. We assess how such devices have empowered the achievement of elevated biosensor performance in terms of high sensitivity, selectivity and low detection limits. We review the recent literature here to illustrate the diversity of FET-based biosensors, based on various kinds of nanomaterials in different applications and sum up that graphene or its assisted composite based FET devices are comparatively more efficient and sensitive with highest signal to noise ratio. Lastly, the future prospects and limitations of the field are also discussed. Copyright © 2015 Elsevier B.V. All rights reserved.

  5. High-performance integrated field-effect transistor-based sensors

    International Nuclear Information System (INIS)

    Adzhri, R.; Md Arshad, M.K.; Gopinath, Subash C.B.; Ruslinda, A.R.; Fathil, M.F.M.; Ayub, R.M.; Nor, M. Nuzaihan Mohd; Voon, C.H.

    2016-01-01

    Field-effect transistors (FETs) have succeeded in modern electronics in an era of computers and hand-held applications. Currently, considerable attention has been paid to direct electrical measurements, which work by monitoring changes in intrinsic electrical properties. Further, FET-based sensing systems drastically reduce cost, are compatible with CMOS technology, and ease down-stream applications. Current technologies for sensing applications rely on time-consuming strategies and processes and can only be performed under recommended conditions. To overcome these obstacles, an overview is presented here in which we specifically focus on high-performance FET-based sensor integration with nano-sized materials, which requires understanding the interaction of surface materials with the surrounding environment. Therefore, we present strategies, material depositions, device structures and other characteristics involved in FET-based devices. Special attention was given to silicon and polyaniline nanowires and graphene, which have attracted much interest due to their remarkable properties in sensing applications. - Highlights: • Performance of FET-based biosensors for the detection of biomolecules is presented. • Silicon nanowire, polyaniline and graphene are the highlighted nanoscaled materials as sensing transducers. • The importance of surface material interaction with the surrounding environment is discussed. • Different device structure architectures for ease in fabrication and high sensitivity of sensing are presented.

  6. Carrier polarity engineering in carbon nanotube field-effect transistors by induced charges in polymer insulator

    Science.gov (United States)

    Aikawa, Shinya; Kim, Sungjin; Thurakitseree, Theerapol; Einarsson, Erik; Inoue, Taiki; Chiashi, Shohei; Tsukagoshi, Kazuhito; Maruyama, Shigeo

    2018-01-01

    We present that the electrical conduction type in carbon nanotube field-effect transistors (CNT-FETs) can be converted by induced charges in a polyvinyl alcohol (PVA) insulator. When the CNT channels are covered with pure PVA, the FET characteristics clearly change from unipolar p-type to ambipolar. The addition of ammonium ions (NH4+) in the PVA leads to further conversion to unipolar n-type conduction. The capacitance - voltage characteristics indicate that a high density of positive charges is induced at the PVA/SiO2 interface and within the bulk PVA. Electrons are electrostatically accumulated in the CNT channels due to the presence of the positive charges, and thus, stable n-type conduction of PVA-coated CNT-FETs is observed, even under ambient conditions. The mechanism for conversion of the conduction type is considered to be electrostatic doping due to the large amount of positive charges in the PVA. A blue-shift of the Raman G-band peak was observed for CNTs coated with NH4+-doped PVA, which corresponds to unipolar n-type CNT-FET behavior. These results confirm that carrier polarity engineering in CNT-FETs can be achieved with a charged PVA passivation layer.

  7. Poly(3-hexylthiophene) (P3HT)/graphene nanocomposite material based organic field effect transistor with enhanced mobility.

    Science.gov (United States)

    Tiwari, Shashi; Singh, Arun Kumar; Prakash, Rajiv

    2014-04-01

    The major drawback of organic field effect transistors (OFETs) is its lower mobility, which restricts their applications for high performance devices. Recently, graphene exhibits excellent carrier mobility, therefore, is used as a novel electronic substance for the fundamental research and several potential applications. Pristine graphene is not applicable in field effect transistors (FETs) for satisfactory on/off current ratio as it has no forbidden energy gap. Here, we report the fabrication as well as characterizations of poly-3-hexylthiophene (P3HT)/graphene nanocomposite (with two distinct concentrations i.e., 0.05 and 0.1 mg/ml of graphene in P3HT solution) based FETs to over come the limitations. The current-voltage (I-V) characteristics of P3HT/graphene based FETs are measured and key performance parameters of device are compared against only polymer P3HT based FETs. The analysis demonstrates that, in P3HT/graphene transistors some crucial parameters such as drain saturation current and mobility enhanced drastically although the on/off ratio reduced significantly. Our study demonstrates that presence of graphene in organic semiconductor and a synergic effect due to uniform distribution in the nanospace is an ordinary route to achieve high mobility OFETs which impart an affordable way for raising the performance of organic transistors.

  8. SiC Optically Modulated Field-Effect Transistor

    Science.gov (United States)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  9. Silicon Tunneling Field Effect Transistors with a Hemicylindrical Nanowire Channel for Ultra-Low Power Application

    Science.gov (United States)

    Park, Byung-Gook; Sun, Min-Chul; Kim, Sang Wan

    In order to decrease the threshold voltage while maintaining the OFF current low, reduction of the subthreshold swing is essential in field effect transistors (FETs). To reduce the subthreshold swing below 60 mV/decade, inter-band tunneling can be used for injection of carriers and the device that utilizes such a mechanism is tunneling field effect transistor (TFET). Silicon(Si) TFETs, which are favored due to their compatibility with currently dominant complementary metal-oxide-semiconductor (CMOS) technology, suffer from low ON current because of the relatively large bandgap of Si. The ON current of Si TFETs can be increased by field and area enhancement in a cylindrical nanowire channel. Numerical analysis has confirmed that the cylindrical channel structure shows significantly higher tunneling rate and wider tunneling area than the double gate structure. Si TFETs with a hemicylindrical nanowire channel are fabricated and characterized, and the effectiveness of nanowire channel approach is demonstrated.

  10. An innovative large scale integration of silicon nanowire-based field effect transistors

    Science.gov (United States)

    Legallais, M.; Nguyen, T. T. T.; Mouis, M.; Salem, B.; Robin, E.; Chenevier, P.; Ternon, C.

    2018-05-01

    Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.

  11. Bidirectional mediation of TiO2 nanowires field effect transistor by dipole moment from purple membrane

    Science.gov (United States)

    Li, Rui; Gan, Ye; Song, Qun Liang; Zhu, Zhi Hong; Shi, Jingsheng; Yang, Hongbin; Wang, Wei; Chen, Peng; Li, Chang Ming

    2010-08-01

    Bacteriorhodopsin-embedded purple membrane (bR-PM) is one of the most promising biomaterials for various bioelectronics applications. In this work, we demonstrate that a dipole bio-originated from bR-PM can bidirectionally mediate the performance of a bottom-contact TiO2 nanowire field effect transistor (FET) for performance improvement. When negative gate voltage is applied, both transfer and output characteristics of the TiO2 nanowire FET are enhanced by the bR-PM modification, resulting in a hole mobility increased by a factor of 2. The effect of the number of the deposited bR-PM layers on the normalized ΔID of the FET suggests that the additional electric field generated by the dipole moment natively existing in bR-PM actually boosts the performance of the TiO2 nanowires FET.

  12. Long-term and real-time monitoring of chondrocyte behavior synthesizing extracellular matrix with biologically coupled field effect transistor

    Science.gov (United States)

    Satake, Hiroto; Saito, Akiko; Mizuno, Shuichi; Kajisa, Taira; Sakata, Toshiya

    2017-04-01

    In this study, we report the differential measurement method of accurately monitoring cellular metabolism with a semiconductor-based field effect transistor (FET), focusing on the proliferation potency of chondrocytes utilized in the field of orthopedics. By adding growth factors to chondrocytes on the gate, cellular activity was induced and continuously monitored as a change in pH during a cellular respiration for ten days using the FET biosensor. Moreover, the electrical signal of the FET device reflected the reproduction property of chondrocytes to synthesize extracellular matrix (ECM). A platform based on the FET device is suitable as a noninvasive, real-time and long-term monitoring system for cellular functions; it will contribute to the elucidation of the mechanism of ECM synthesis by chondrocytes.

  13. A subthermionic tunnel field-effect transistor with an atomically thin channel.

    Science.gov (United States)

    Sarkar, Deblina; Xie, Xuejun; Liu, Wei; Cao, Wei; Kang, Jiahao; Gong, Yongji; Kraemer, Stephan; Ajayan, Pulickel M; Banerjee, Kaustav

    2015-10-01

    The fast growth of information technology has been sustained by continuous scaling down of the silicon-based metal-oxide field-effect transistor. However, such technology faces two major challenges to further scaling. First, the device electrostatics (the ability of the transistor's gate electrode to control its channel potential) are degraded when the channel length is decreased, using conventional bulk materials such as silicon as the channel. Recently, two-dimensional semiconducting materials have emerged as promising candidates to replace silicon, as they can maintain excellent device electrostatics even at much reduced channel lengths. The second, more severe, challenge is that the supply voltage can no longer be scaled down by the same factor as the transistor dimensions because of the fundamental thermionic limitation of the steepness of turn-on characteristics, or subthreshold swing. To enable scaling to continue without a power penalty, a different transistor mechanism is required to obtain subthermionic subthreshold swing, such as band-to-band tunnelling. Here we demonstrate band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-dimensional semiconductor, that exhibit steep turn-on; subthreshold swing is a minimum of 3.9 millivolts per decade and an average of 31.1 millivolts per decade for four decades of drain current at room temperature. By using highly doped germanium as the source and atomically thin molybdenum disulfide as the channel, a vertical heterostructure is built with excellent electrostatics, a strain-free heterointerface, a low tunnelling barrier, and a large tunnelling area. Our atomically thin and layered semiconducting-channel tunnel-FET (ATLAS-TFET) is the only planar architecture tunnel-FET to achieve subthermionic subthreshold swing over four decades of drain current, as recommended in ref. 17, and is also the only tunnel-FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts. Our

  14. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Organic semiconductor; field effect transistor; phthalocyanine; high mobility. Abstract. Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film prepared by chemical vapour deposition was used as the organic gate insulator. The annealing of the samples was ...

  15. A disorder induced field effect transistor in bilayer and trilayer graphene

    International Nuclear Information System (INIS)

    Xu Dongwei; Liu Haiwen; Sacksteder IV, Vincent; Sun Qingfeng; Song Juntao; Jiang Hua; Xie, X C

    2013-01-01

    We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene and gapped bilayer graphene. (paper)

  16. ZnO nanorods array based field-effect transistor biosensor for phosphate detection.

    Science.gov (United States)

    Ahmad, Rafiq; Ahn, Min-Sang; Hahn, Yoon-Bong

    2017-07-15

    A promising field-effect transistor (FET) biosensor has been fabricated based on pyruvate oxidase (PyO) functionalized ZnO nanorods (ZnO NRs) array grown on seeded SiO 2 /Si substrate. The direct and vertically grown ZnO NRs on the seeded SiO 2 /Si substrate offers high surface area for enhanced PyO immobilization, which further helps to detect phosphate with higher specificity. Under optimum conditions, the fabricated FET biosensor provided a convenient method for phosphate detection with high sensitivity (80.57μAmM -1 cm -2 ) in a wide-linear range (0.1µM-7.0mM). Additionally, it also showed very low effect of electroactive species, stability and good reproducibility. Encouraging results suggest that this approach presents a promising method to be used for field measurements to detect phosphate. Copyright © 2017. Published by Elsevier Inc.

  17. A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

    International Nuclear Information System (INIS)

    Jimenez, D; Cartoixa, X; Miranda, E; Sune, J; Chaves, F A; Roche, S

    2007-01-01

    We report on a new computational model to efficiently simulate carbon nanotube-based field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by a thin oxide layer and a metal gate electrode. At both ends of the semiconducting channel, two semi-infinite metallic reservoirs act as source and drain contacts. The current-voltage characteristics are computed using the Landauer formalism, including the effect of the Schottky barrier physics. The main operational regimes of the CNT-FET are described, including thermionic and tunnel current components, capturing ambipolar conduction, multichannel ballistic transport and electrostatics dominated by the nanotube capacitance. The calculations are successfully compared to results given by more sophisticated methods based on non-equilibrium Green's function formalism (NEGF)

  18. Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, Himadri; Kataria, Satender [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); Aguirre-Morales, Jorge-Daniel; Fregonese, Sebastien; Zimmer, Thomas [IMS Laboratory, Centre National de la Recherche Scientifique, University of Bordeaux, Talence (France); Passi, Vikram [University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany); Iannazzo, Mario; Alarcon, Eduard [Technical University of Catalonia, Department of Electronics Engineering, UPC, Barcelona (Spain); Lemme, Max C. [RWTH Aachen University, Chair for Electronic Devices, Aachen (Germany); University of Siegen, School of Science and Technology, Siegen (Germany); AMO GmbH, Advanced Microelectronics Center Aachen (Germany)

    2017-11-15

    We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors

    International Nuclear Information System (INIS)

    Kim, Taekyung; Kim, Seongwon; Olson, Eric; Zuo Jianmin

    2008-01-01

    We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles

  20. A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip.

    Science.gov (United States)

    Shin, Kumjae; Kang, Dae sil; Lee, Sang hoon; Moon, Wonkyu

    2015-12-01

    We propose a method for measuring the capacitance of a thin layer using a Tip-on-Gate of Field-Effect Transistor (ToGoFET) probe. A ToGoFET probe with a metal-oxide-semiconductor field-effect transistor (MOSFET) with an ion-implant channel was embedded at the end of a cantilever and a Pt tip was fabricated using micro-machining. The ToGoFET probe was used to detect an alternating electric field at the dielectric surface. A dielectric buried metal sample was prepared; a sinusoidal input signal was applied to the buried metal lines; and the ToGoFET probe detected the electric field at the tip via the dielectric. The AC signal detected by the ToGoFET probe was demodulated by a simple AC-to-DC converter. Experimentally, it was shown that an electric field could be measured at the surface of the dielectric layer above a buried metal line. This promising result shows that it is possible to measure the surface local capacitance. Copyright © 2015 Elsevier B.V. All rights reserved.

  1. P-type field effect transistor based on Na-doped BaSnO3

    Science.gov (United States)

    Jang, Yeaju; Hong, Sungyun; Park, Jisung; Char, Kookrin

    We fabricated field effect transistors (FET) based on the p-type Na-doped BaSnO3 (BNSO) channel layer. The properties of epitaxial BNSO channel layer were controlled by the doping rate. In order to modulate the p-type FET, we used amorphous HfOx and epitaxial BaHfO3 (BHO) gate oxides, both of which have high dielectric constants. HfOx was deposited by atomic-layer-deposition and BHO was epitaxially grown by pulsed laser deposition. The pulsed laser deposited SrRuO3 (SRO) was used as the source and the drain contacts. Indium-tin oxide and La-doped BaSnO3 were used as the gate electrodes on top of the HfOx and the BHO gate oxides, respectively. We will analyze and present the performances of the BNSO field effect transistor such as the IDS-VDS, the IDS-VGS, the Ion/Ioff ratio, and the field effect mobility. Samsung Science and Technology Foundation.

  2. Enrichment of semiconducting single-walled carbon nanotubes by carbothermic reaction for use in all-nanotube field effect transistors.

    Science.gov (United States)

    Li, Shisheng; Liu, Chang; Hou, Peng-Xiang; Sun, Dong-Ming; Cheng, Hui-Ming

    2012-11-27

    Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 °C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of ∼10(3).

  3. Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films

    Science.gov (United States)

    Aleshin, A. N.; Shcherbakov, I. P.; Trapeznikova, I. N.; Petrov, V. N.

    2017-12-01

    Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH3NH3PbBr3, were obtained and their electrical properties were studied. FETs made of CH3NH3PbBr3 films possess current- voltage characteristics (IVs) typical for ambipolar FETs with saturation regime. The transfer characteristics of FETs based on CH3NH3PbBr3 have an insignificant hysteresis and slightly depend on voltage at the source-drain. Mobilities of charge carriers (holes) calculated from IVs of FETs based on CH3NH3PbBr3 at 300 K in saturation and weak field regimes were 5 and 2 cm2/V s, respectively, whereas electron mobility is 3 cm2/V s, which exceeds the mobility value 1 cm2/V s obtained earlier for FETs based on CH3NH3PbI3.

  4. Strain and deformations engineered germanene bilayer double gate-field effect transistor by first principles

    Science.gov (United States)

    Meher Abhinav, E.; Chandrasekaran, Gopalakrishnan; Kasmir Raja, S. V.

    2017-10-01

    Germanene, silicene, stanene, phosphorene and graphene are some of single atomic materials with novel properties. In this paper, we explored bilayer germanene-based Double Gate-Field Effect Transistor (DG-FET) with various strains and deformations using Density Functional Theory (DFT) and Green's approach by first-principle calculations. The DG-FET of 1.6 nm width, 6 nm channel length (Lch) and HfO2 as gate dielectric has been modeled. For intrinsic deformation of germanene bilayer, we have enforced minute mechanical deformation of wrap and twist (5°) and ripple (0.5 Å) on germanene bilayer channel material. By using NEGF formalism, I-V Characteristics of various strains and deformation tailored DG-FET was calculated. Our results show that rough edge and single vacancy (5-9) in bilayer germanene diminishes the current around 47% and 58% respectively as compared with pristine bilayer germanene. In case of strain tailored bilayer DG-FET, multiple NDR regions were observed which can be utilized in building stable multiple logic states in digital circuits and high frequency oscillators using negative resistive techniques.

  5. Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

    Science.gov (United States)

    Ahlberg, Patrik; Hinnemo, Malkolm; Zhang, Shi-Li; Olsson, Jörgen

    2018-03-01

    By pretreating the substrate of a graphene field-effect transistor (G-FET), a stable unipolar transfer characteristic, instead of the typical V-shape ambipolar behavior, has been demonstrated. This behavior is achieved through functionalization of the SiO2/Si substrate that changes the SiO2 surface from hydrophilic to hydrophobic, in combination with postdeposition of an Al2O3 film by atomic layer deposition (ALD). Consequently, the back-gated G-FET is found to have increased apparent hole mobility and suppressed apparent electron mobility. Furthermore, with addition of a top-gate electrode, the G-FET is in a double-gate configuration with independent top- or back-gate control. The observed difference in mobility is shown to also be dependent on the top-gate bias, with more pronounced effect at higher electric field. Thus, the combination of top and bottom gates allows control of the G-FET's electron and hole mobilities, i.e., of the transfer behavior. Based on these observations, it is proposed that polar ligands are introduced during the ALD step and, depending on their polarization, result in an apparent increase of the effective hole mobility and an apparent suppressed effective electron mobility.

  6. Molecular recognition by synthetic receptors: Application in field-effect transistor based chemosensing.

    Science.gov (United States)

    Iskierko, Zofia; Noworyta, Krzysztof; Sharma, Piyush Sindhu

    2018-03-06

    Molecular recognition, i.e., ability of one molecule to recognize another through weak bonding interactions, is one of the bases of life. It is often implemented to sensing systems of high merits. Preferential recognition of the analyte (guest) by the receptor (host) induces changes in physicochemical properties of the sensing system. These changes are measured by using suitable signal transducers. Because of possibility of miniaturization, fast response, and high sensitivity, field-effect transistors (FETs) are more frequently being used for that purpose. A FET combined with a biological material offers the potential to overcome many challenges approached in sensing. However, low stability of biological materials under measurement conditions is a serious problem. To circumvent this problem, synthetic receptors were integrated with the gate surface of FETs to provide robust performance. In the present critical review, the approach utilized to devise chemosensors integrating synthetic receptors and FET transduction is discussed in detail. The progress in this field was summarized and important outcome was provided. Copyright © 2018 Elsevier B.V. All rights reserved.

  7. Optical AND operation in n-AlGaAs/GaAs heterojunction field effect transistor

    Science.gov (United States)

    Kawazu, T.; Noda, T.; Sakuma, Y.

    2018-02-01

    The near-infrared photoresponses of an n-AlGaAs/GaAs heterojunction field-effect transistor (FET) were investigated for the irradiation of two lights: (A) a laser beam with the energy above the Schottky-barrier which uniformly illuminates the gate region and (B) a laser beam with the energy above the GaAs bandgap which locally illuminates the ungate region. We measured a lateral photocurrent in the two dimensional electron gas (2DEG) channel at the n-AlGaAs/GaAs heterojunction and found that the FET acts as an optical AND element; the lateral photocurrent is generated only when both the light A and B simultaneously illuminate the FET. The lateral current flows from left to right when the left side of the FET is illuminated with the light B, while the right side irradiation leads to the current from right to left. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by an asymmetric electron transfer resulting from the simultaneous irradiation of the light A and B.

  8. High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

    KAUST Repository

    Huang, Ruo-Gu

    2011-06-24

    We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

  9. Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

    Science.gov (United States)

    Pud, S.; Gasparyan, F.; Petrychuk, M.; Li, J.; Offenhäusser, A.; Vitusevich, S. A.

    2014-06-01

    Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

  10. Recent progress in photoactive organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yutaka Wakayama

    2014-04-01

    Full Text Available Recent progress in photoactive organic field-effect transistors (OFETs is reviewed. Photoactive OFETs are divided into light-emitting (LE and light-receiving (LR OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  11. Recent progress in photoactive organic field-effect transistors.

    Science.gov (United States)

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-04-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  12. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

    Science.gov (United States)

    Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

    2016-07-13

    The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

  13. Assessment of Phospohrene Field Effect Transistors

    Science.gov (United States)

    2018-01-28

    Promising transistors based on a few layers of phosphorus atoms," in IEEE MTT-5 IMWS- AMP , Suzhou, China, Jul. 2015, pp. 1-3. DOI: 10.1109/LED...2014.2362841. DOI: 10.1109/IMWS- AMP .2015.7324944. Keywords: Contacts, dielectric films, MOSFETs, passivation, stability. [5] X. Luo, K. Xiong, J.C. M. Hwang, Y

  14. Experimental Observation of Quantum Confinement Effect in and Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature

    Science.gov (United States)

    Suzuki, Ryota; Nozue, Motoki; Saraya, Takuya; Hiramoto, Toshiro

    2013-10-01

    The quantum confinement effect (QCE) in ultranarrow silicon nanowire channel field-effect transistors (FETs) as well as single-electron/hole transistors (SET/SHTs) operating at room temperature is intensively investigated for the optimization of device design and fabrication. By adopting a “shared channel” structure with the directions of and , a carrier-dependent QCE is systematically examined. It is found that nanowire pFETs exhibit a smaller threshold voltage (Vth) variability due to a weaker QCE, while nFETs and n/pFETs show comparable Vth variabilities coming from the QCE. It is also found that only SETs exhibit clear Coulomb oscillations in the case of the channel, suggesting the formation of higher tunnel barriers than SHTs. On the other hand, SHTs show undesirable multidot behavior in spite of their comparable QCEs for electrons and holes. It is concluded that -directed nanowire channel SETs and n/pFETs are suitable for the integration of CMOS and SETs.

  15. Fabrication and characterization on reduced graphene oxide field effect transistor (RGOFET) based biosensor

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, A. Diyana [School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Pauh, Perlis (Malaysia); Ruslinda, A. Rahim, E-mail: ruslinda@unimap.edu.my; Fatin, M. F. [Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis (Malaysia); Hashim, U.; Arshad, M. K. [School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), Pauh, Perlis (Malaysia); Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis (Malaysia)

    2016-07-06

    The fabrication and characterization on reduced graphene oxide field effect transistor (RGO-FET) were demonstrated using a spray deposition method for biological sensing device purpose. A spray method is a fast, low-cost and simple technique to deposit graphene and the most promising technology due to ideal coating on variety of substrates and high production speed. The fabrication method was demonstrated for developing a label free aptamer reduced graphene oxide field effect transistor biosensor. Reduced graphene oxide (RGO) was obtained by heating on hot plate fixed at various temperatures of 100, 200 and 300°C, respectively. The surface morphology of RGO were examined via atomic force microscopy to observed the temperature effect of produced RGO. The electrical measurement verify the performance of electrical conducting RGO-FET at temperature 300°C is better as compared to other temperature due to the removal of oxygen groups in GO. Thus, reduced graphene oxide was a promising material for biosensor application.

  16. Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

    Science.gov (United States)

    Phillips, Thomas A.; MacLeond, Todd C.; Sayyah, Rana; Ho, Fat Duen

    2009-01-01

    Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

  17. Modeling of pH Dependent Electrochemical Noise in Ion Sensitive Field Effect Transistors ISFET

    Directory of Open Access Journals (Sweden)

    M. P. Das

    2013-02-01

    Full Text Available pH ISFETs are very important sensor for in vivo continuous monitoring application of physiological and environmental system. The accuracy of Ion Sensitive Field Effect Transistor (ISFET output measurement is greatly affected by the presences of noise, drift and slow response of the device. Although the noise analysis of ISFET so far performed in different literature relates only to sources originated from Field Effect Transistor (FET structure which are almost constant for a particular device, the pH dependent electrochemical noise has not been substantially explored and analyzed. In this paper we have investigated the low frequency pH dependent electrochemical noise that originates from the ionic conductance of the electrode-electrolyte-Field Effect Transistor structure of the device and that the noise depends on the concentration of the electrolyte and 1/f in nature. The statistical and frequency analysis of this electrochemical noise of a commercial ISFET sensor, under room temperature has been performed for six different pH values ranging from pH2 to pH9.2. We have also proposed a concentration dependent a/f & b/f2 model of the noise with different values of the coefficients a, b.

  18. Dopamine Receptor D1 Agonism and Antagonism Using a Field-Effect Transistor Assay.

    Science.gov (United States)

    Park, Seon Joo; Yang, Heehong; Lee, Seung Hwan; Song, Hyun Seok; Park, Chul Soon; Bae, Joonwon; Kwon, Oh Seok; Park, Tai Hyun; Jang, Jyongsik

    2017-06-27

    The field-effect transistor (FET) has been used in the development of diagnostic tools for several decades, leading to high-performance biosensors. Therefore, the FET platform can provide the foundation for the next generation of analytical methods. A major role of G-protein-coupled receptors (GPCRs) is in the transfer of external signals into the cell and promoting human body functions; thus, their principle application is in the screening of new drugs. The research community uses efficient systems to screen potential GPCR drugs; nevertheless, the need to develop GPCR-conjugated analytical devices remains for next-generation new drug screening. In this study, we proposed an approach for studying receptor agonism and antagonism by combining the roles of FETs and GPCRs in a dopamine receptor D1 (DRD1)-conjugated FET system, which is a suitable substitute for conventional cell-based receptor assays. DRD1 was reconstituted and purified to mimic native binding pockets that have highly discriminative interactions with DRD1 agonists/antagonists. The real-time responses from the DRD1-nanohybrid FET were highly sensitive and selective for dopamine agonists/antagonists, and their maximal response levels were clearly different depending on their DRD1 affinities. Moreover, the equilibrium constants (K) were estimated by fitting the response levels. Each K value indicates the variation in the affinity between DRD1 and the agonists/antagonists; a greater K value corresponds to a stronger DRD1 affinity in agonism, whereas a lower K value in antagonism indicates a stronger dopamine-blocking effect.

  19. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2016-06-09

    We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

  20. Fabrication and independent control of patterned polymer gate for a few-layer WSe2 field-effect transistor

    Directory of Open Access Journals (Sweden)

    Sung Ju Hong

    2016-08-01

    Full Text Available We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D semiconductor, few-layer tungsten diselenide (WSe2 field-effect transistor (FET. We expose an electron-beam in a desirable region to form the patterned structure. The WSe2 FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS2 FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibility in transition metal dichalcogenide (TMD-based electronics.

  1. Field effect transistors and RC filters from pencil-trace on paper.

    Science.gov (United States)

    Kurra, Narendra; Dutta, Dipanwita; Kulkarni, Giridhar U

    2013-06-07

    We report the fabrication of Resistor-Capacitor (RC) filters and field effect transistors (FETs) based on pencil drawings on paper, which contain turbostratic graphite crystallites as evidenced from Raman analysis. Pencil drawings have been employed as resistor and an ion gel, 1-butyl-3-methylimidazolium octyl sulfate mixed with polydimethylsiloxane (PDMS) as dielectric, for the fabrication of RC filters with a cut-off frequency of 9 kHz. With ion gel as gate dielectric, an ambipolar electric field effect has been obtained from the pencil-trace at low operating voltages. The carrier mobilities were found to be ∼106 and 59 cm(2) V(-1) s(-1) for holes and electrons, respectively. The mobility value showed only 15% variation among the devices tested, truly remarkable given the simplicity of the fabrication process.

  2. Signal amplification in electrochemical detection of buckwheat allergenic protein using field effect transistor biosensor by introduction of anionic surfactant

    Directory of Open Access Journals (Sweden)

    Sho Hideshima

    2016-03-01

    Full Text Available Food allergens, especially buckwheat proteins, sometimes induce anaphylactic shock in patients after ingestion. Development of a simple and rapid screening method based on a field effect transistor (FET biosensor for food allergens in food facilities or products is in demand. In this study, we achieved the FET detection of a buckwheat allergenic protein (BWp16, which is not charged enough to be electrically detected by FET biosensors, by introducing additional negative charges from anionic surfactants to the target proteins. A change in the FET characteristics reflecting surface potential caused by the adsorption of target charged proteins was observed when the target sample was coupled with the anionic surfactant (sodium dodecyl sulfate; SDS, while no significant response was detected without any surfactant treatment. It was suggested that the surfactant conjugated with the protein could be useful for the charge amplification of the target proteins. The surface plasmon resonance analysis revealed that the SDS-coupled proteins were successfully captured by the receptors immobilized on the sensing surface. Additionally, we obtained the FET responses at various concentrations of BWp16 ranging from 1 ng/mL to 10 μg/mL. These results suggest that a signal amplification method for FET biosensing is useful for allergen detection in the food industry.

  3. Full-Wave Analysis of Traveling-Wave Field-Effect Transistors Using Finite-Difference Time-Domain Method

    Directory of Open Access Journals (Sweden)

    Koichi Narahara

    2012-01-01

    Full Text Available Nonlinear transmission lines, which define transmission lines periodically loaded with nonlinear devices such as varactors, diodes, and transistors, are modeled in the framework of finite-difference time-domain (FDTD method. Originally, some root-finding routine is needed to evaluate the contributions of nonlinear device currents appropriately to the temporally advanced electrical fields. Arbitrary nonlinear transmission lines contain large amount of nonlinear devices; therefore, it costs too much time to complete calculations. To reduce the calculation time, we recently developed a simple model of diodes to eliminate root-finding routines in an FDTD solver. Approximating the diode current-voltage relation by a piecewise-linear function, an extended Ampere's law is solved in a closed form for the time-advanced electrical fields. In this paper, we newly develop an FDTD model of field-effect transistors (FETs, together with several numerical examples that demonstrate pulse-shortening phenomena in a traveling-wave FET.

  4. Two-dimensional negative capacitance field-effect transistor with organic ferroelectric.

    Science.gov (United States)

    Zhang, Heng; Chen, Yan; Ding, Shi-Jin; Wang, Jianlu; Bao, Wen-Zhong; Zhang, David Wei; Zhou, Peng

    2018-03-27

    In the past fifty years, the complementary metal-oxide-semiconductor(CMOS) integrated circuits have got great development, but Moore's law will soon come to an end. In order to break through the physical limit of Moore's law, two-dimensional materials have been widely used in many electronic devices because of its high mobility and large quantum capacitances. And the emergence of negative capacitance field-effect transistor(FET) could not only break the thermal limit of conventional devices, but also reduce operating voltage and power consumption. This paper demonstrates a two-dimensional negative capacitance FET treating molybdenum disulfide(MoS2) as channel material and organic P(VDF-TrFE) as gate dielectric directly, which makes a new attempt for preparation of negative capacitance FETs and producing flexible electronic devices. It exhibited 10^6 on-/off-current ratio. And the minimum subthreshold swing(SS) of 21mV/decade and average subthreshold swing of 44mV/decade in four orders magnitude of drain current were also observed at room temperature of 300K. © 2018 IOP Publishing Ltd.

  5. A high sensitivity field effect transistor biosensor for methylene blue detection utilize graphene oxide nanoribbon.

    Science.gov (United States)

    Lin, Ting-Chun; Li, Yan-Sheng; Chiang, Wei-Hung; Pei, Zingway

    2017-03-15

    In this work, we developed a field effect transistor (FET) biosensor utilizing solution-processed graphene oxide nanoribbon (GONR) for methylene blue (MB) sensing. MB is a unique material; one of its crucial applications is as a marker in the detection of biomaterials. Therefore, a highly sensitive biosensor with a low detection limit that can be fabricated simply in a noncomplex detection scheme is desirable. GONR is made by unzipping multiwall carbon nanotubes, which can be mass-produced at low temperature. The GONR-FET biosensor demonstrated a sensitivity of 12.5μA/mM (determined according to the drain current difference caused by the MB concentration change). The Raman spectra indicate that the materials quality of the GONR and the domain size for the C=C sp 2 bonding were both improved after MB detection. X-ray photoelectron spectroscopy revealed that the hydroxyl groups on the GONR were removed by the reductive MB. According to XPS and Raman, the positive charge is proposed to transfer from MB to GONR during sensing. This transfer causes charge in-neutrality in the GONR which is compensated by releasing •OH functional groups. With high sensitivity, a low detection limit, and a simple device structure, the GONR-FET sensor is suitable for sensing biomaterials. Copyright © 2016 Elsevier B.V. All rights reserved.

  6. Field-effect transistor biosensors with two-dimensional black phosphorus nanosheets.

    Science.gov (United States)

    Chen, Yantao; Ren, Ren; Pu, Haihui; Chang, Jingbo; Mao, Shun; Chen, Junhong

    2017-03-15

    A black phosphorous (BP)-based field-effect transistor (FET) biosensor was fabricated by using few-layer BP nanosheets labeled with gold nanoparticle-antibody conjugates. BP nanosheets were mechanically exfoliated and used as the sensing/conducting channel in the FET, with an Al 2 O 3 thin film as the dielectric layer for surface passivation. Antibody probes were conjugated with gold nanoparticles that were sputtered on the BP through surface functionalization. The sensor response was measured by the change in the BP's electrical resistance after antigens were introduced. The adsorbed antigens through specific antigen-antibody binding interactions induced a gate potential, thereby changing the drain-source current. The as-produced BP biosensor showed both high sensitivity (lower limit of detection ~10ng/ml) and selectivity towards human immunoglobulin G. Results from this study demonstrate the outstanding performance of BP as a sensing channel for FET biosensor applications. Copyright © 2016 Elsevier B.V. All rights reserved.

  7. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Mater. Sci., Vol. 37, No. 1, February 2014, pp. 95–99. c Indian Academy of Sciences. High mobility polymer gated organic field effect transistor using zinc phthalocyanine. K R RAJESH. ∗. , V KANNAN, M R KIM, Y S CHAE and J K RHEE. Millimeter- Wave Innovation Technology Research Centre (MINT), Dongguk University,.

  8. Ambipolar light-emitting organic field-effect transistor

    NARCIS (Netherlands)

    Rost, Constance; Karg, Siegfried; Riess, Walter; Loi, Maria Antonietta; Murgia, Mauro; Muccini, Michele

    2004-01-01

    We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α-quinquethiophene (α-5T) as hole-transport material and N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide

  9. Bimolecular recombination in ambipolar organic field effect transistors

    NARCIS (Netherlands)

    Charrier, D.S.H.; Vries, T. de; Mathijssen, S.G.J.; Geluk, E.-J.; Smits, E.C.P.; Kemerink, M.; Janssen, R.A.J.

    2009-01-01

    In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy

  10. Electronic properties of germanane field-effect transistors

    NARCIS (Netherlands)

    Madhushankar, B.N.; Kaverzin, A.; Giousis, T.; Potsi, G.; Gournis, D.; Rudolf, P.; Blake, G.R.; van der Wal, C.H.; van Wees, B.J.

    2017-01-01

    A new two dimensional (2D) material—germanane—has been synthesised recently with promising electrical and optical properties. In this paper we report the first realisation of germanane field-effect transistors fabricated from multilayer single crystal flakes. Our germanane devices show transport in

  11. Single-molecule probes in organic field-effect transistors

    NARCIS (Netherlands)

    Nicolet, Aurélien Armel Louis

    2007-01-01

    The goal of this thesis is to study charge transport phenomena in organic materials. This is done optically by means of single-molecule spectroscopy in a field-effect transistor based on a molecular crystal. We present (in Chapter 2) a fundamental requirement for single-molecule spectroscopy

  12. Nanoscaled biological gated field effect transistors for cytogenetic analysis

    DEFF Research Database (Denmark)

    Kwasny, Dorota; Dimaki, Maria; Andersen, Karsten Brandt

    2014-01-01

    Cytogenetic analysis is the study of chromosome structure and function, and is often used in cancer diagnosis, as many chromosome abnormalities are linked to the onset of cancer. A novel label free detection method for chromosomal translocation analysis using nanoscaled field effect transistors...

  13. Reaching saturation in patterned source vertical organic field effect transistors

    Science.gov (United States)

    Greenman, Michael; Sheleg, Gil; Keum, Chang-min; Zucker, Jonathan; Lussem, Bjorn; Tessler, Nir

    2017-05-01

    Like most of the vertical transistors, the Patterned Source Vertical Organic Field Effect Transistor (PS-VOFET) does not exhibit saturation in the output characteristics. The importance of achieving a good saturation is demonstrated in a vertical organic light emitting transistor; however, this is critical for any application requiring the transistor to act as a current source. Thereafter, a 2D simulation tool was used to explain the physical mechanisms that prevent saturation as well as to suggest ways to overcome them. We found that by isolating the source facet from the drain-source electric field, the PS-VOFET architecture exhibits saturation. The process used for fabricating such saturation-enhancing structure is then described. The new device demonstrated close to an ideal saturation with only 1% change in the drain-source current over a 10 V change in the drain-source voltage.

  14. Photo-excited charge collection spectroscopy probing the traps in field-effect transistors

    CERN Document Server

    Im, Seongil; Kim, Jae Hoon

    2013-01-01

    Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materia...

  15. Single Nucleotide Polymorphism Detection Using Au-Decorated Single-Walled Carbon Nanotube Field Effect Transistors

    Directory of Open Access Journals (Sweden)

    Keum-Ju Lee

    2011-01-01

    Full Text Available We demonstrate that Au-cluster-decorated single-walled carbon nanotubes (SWNTs may be used to discriminate single nucleotide polymorphism (SNP. Nanoscale Au clusters were formed on the side walls of carbon nanotubes in a transistor geometry using electrochemical deposition. The effect of Au cluster decoration appeared as hole doping when electrical transport characteristics were examined. Thiolated single-stranded probe peptide nucleic acid (PNA was successfully immobilized on Au clusters decorating single-walled carbon nanotube field-effect transistors (SWNT-FETs, resulting in a conductance decrease that could be explained by a decrease in Au work function upon adsorption of thiolated PNA. Although a target single-stranded DNA (ssDNA with a single mismatch did not cause any change in electrical conductance, a clear decrease in conductance was observed with matched ssDNA, thereby showing the possibility of SNP (single nucleotide polymorphism detection using Au-cluster-decorated SWNT-FETs. However, a power to discriminate SNP target is lost in high ionic environment. We can conclude that observed SNP discrimination in low ionic environment is due to the hampered binding of SNP target on nanoscale surfaces in low ionic conditions.

  16. 3D modeling of dual-gate FinFET

    OpenAIRE

    Mil?shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

    2012-01-01

    The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence...

  17. Charge carrier velocity in graphene field-effect transistors

    Science.gov (United States)

    Bonmann, Marlene; Vorobiev, Andrei; Andersson, Michael A.; Stake, Jan

    2017-12-01

    To extend the frequency range of transistors into the terahertz domain, new transistor technologies, materials, and device concepts must be continuously developed. The quality of the interface between the involved materials is a highly critical factor. The presence of impurities can degrade device performance and reliability. In this paper, we present a method that allows the study of the charge carrier velocity in a field-effect transistor vs impurity levels. The charge carrier velocity is found using high-frequency scattering parameter measurements followed by delay time analysis. The limiting factors of the saturation velocity and the effect of impurities are then analysed by applying analytical models of the field-dependent and phonon-limited carrier velocity. As an example, this method is applied to a top-gated graphene field-effect transistor (GFET). We find that the extracted saturation velocity is ca. 1.4 ×107 cm/s and is mainly limited by silicon oxide substrate phonons. Within the considered range of residual charge carrier concentrations, charged impurities do not limit the saturation velocity directly by the phonon mechanism. Instead, the impurities act as traps that emit charge carriers at high fields, preventing the current from saturation and thus limiting power gain of the GFETs. The method described in this work helps to better understand the influence of impurities and clarifies methods of further transistor development. High quality interfaces are required to achieve current saturation via velocity saturation in GFETs.

  18. Directionally Aligned Amorphous Polymer Chains via Electrohydrodynamic-Jet Printing: Analysis of Morphology and Polymer Field-Effect Transistor Characteristics.

    Science.gov (United States)

    Kim, Yebyeol; Bae, Jaehyun; Song, Hyun Woo; An, Tae Kyu; Kim, Se Hyun; Kim, Yun-Hi; Park, Chan Eon

    2017-11-15

    Electrohydrodynamic-jet (EHD-jet) printing provides an opportunity to directly assembled amorphous polymer chains in the printed pattern. Herein, an EHD-jet printed amorphous polymer was employed as the active layer for fabrication of organic field-effect transistors (OFETs). Under optimized conditions, the field-effect mobility (μ FET ) of the EHD-jet printed OFETs was 5 times higher than the highest μ FET observed in the spin-coated OFETs, and this improvement was achieved without the use of complex surface templating or additional pre- or post-deposition processing. As the chain alignment can be affected by the surface energy of the dielectric layer in EHD-jet printed OFETs, dielectric layers with varying wettability were examined. Near-edge X-ray absorption fine structure measurements were performed to compare the amorphous chain alignment in OFET active layers prepared by EHD-jet printing and spin coating.

  19. Recent progress in photoactive organic field-effect transistors

    OpenAIRE

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-01-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These ar...

  20. MoS₂ field-effect transistor for next-generation label-free biosensors.

    Science.gov (United States)

    Sarkar, Deblina; Liu, Wei; Xie, Xuejun; Anselmo, Aaron C; Mitragotri, Samir; Banerjee, Kaustav

    2014-04-22

    Biosensors based on field-effect transistors (FETs) have attracted much attention, as they offer rapid, inexpensive, and label-free detection. While the low sensitivity of FET biosensors based on bulk 3D structures has been overcome by using 1D structures (nanotubes/nanowires), the latter face severe fabrication challenges, impairing their practical applications. In this paper, we introduce and demonstrate FET biosensors based on molybdenum disulfide (MoS2), which provides extremely high sensitivity and at the same time offers easy patternability and device fabrication, due to its 2D atomically layered structure. A MoS2-based pH sensor achieving sensitivity as high as 713 for a pH change by 1 unit along with efficient operation over a wide pH range (3-9) is demonstrated. Ultrasensitive and specific protein sensing is also achieved with a sensitivity of 196 even at 100 femtomolar concentration. While graphene is also a 2D material, we show here that it cannot compete with a MoS2-based FET biosensor, which surpasses the sensitivity of that based on graphene by more than 74-fold. Moreover, we establish through theoretical analysis that MoS2 is greatly advantageous for biosensor device scaling without compromising its sensitivity, which is beneficial for single molecular detection. Furthermore, MoS2, with its highly flexible and transparent nature, can offer new opportunities in advanced diagnostics and medical prostheses. This unique fusion of desirable properties makes MoS2 a highly potential candidate for next-generation low-cost biosensors.

  1. Vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2012-10-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.

  2. Enhanced stability of black phosphorus field-effect transistors with SiO₂ passivation.

    Science.gov (United States)

    Wan, Bensong; Yang, Bingchao; Wang, Yue; Zhang, Junying; Zeng, Zhongming; Liu, Zhongyuan; Wang, Wenhong

    2015-10-30

    Few-layer black phosphorus (BP) has attracted much attention due to its high mobility and suitable band gap for potential applic5ations in optoelectronics and flexible devices. However, its instability under ambient conditions limits its practical applications. Our investigations indicate that by passivation of the mechanically exfoliated BP flakes with a SiO2 layer, the fabricated BP field-effect transistors (FETs) exhibit greatly enhanced environmental stability. Compared to the unpassivated BP devices, which show a fast drop of on/off current ratio by a factor of 10 after one week of ambient exposure, the SiO2-passivated BP devices display a high retained on/off current ratio of over 600 after one week of exposure, just a little lower than the initial value of 810. Our investigations provide an effective route to passivate the few-layer BPs for enhancement of their environmental stability.

  3. Modeling of lightly doped drain and source graphene nanoribbon field effect transistors

    Science.gov (United States)

    Saremi, Mehdi; Saremi, Maryam; Niazi, Hamid; Goharrizi, Arash Yazdanpanah

    2013-08-01

    In this paper, to minimize the tunneling leakage current, we propose a graphene nanoribbon (GNR) field effect transistor (FET) using lightly doped drain and source (LDDS) between intrinsic channel region and highly doped source and drain regions. By using a nonequilibrium Green’s function (NEGF) method, the transport characteristics of LDDS-GNRFET in comparison to those of conventional GNRFET are investigated. According to simulation results, LDDS-GNRFET with proper doping in LDDS regions, demonstrates much less leakage current, larger ON-OFF ratio (Ion/Ioff), better subthreshold-swing (SS), no ambipolar characteristic, and better switching parameters. These advantages represent the proposed structure as a suitable candidate for low-power and high-speed applications.

  4. Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor.

    Science.gov (United States)

    Park, Jun-Young; Lee, Byung-Hyun; Lee, Geon-Beom; Bae, Hagyoul; Choi, Yang-Kyu

    2018-02-07

    This work investigates localized electrothermal annealing (ETA) with extremely low power consumption. The proposed method utilizes, for the first time, tunneling-current-induced Joule heat in a p-i-n diode, consisting of p-type, intrinsic, and n-type semiconductors. The consumed power used for dopant control is the lowest value ever reported. A metal-oxide-semiconductor field-effect transistor (MOSFET) composed of a p-i-n silicon nanowire, which is a substructure of a tunneling FET (TFET), was fabricated and utilized as a test platform to examine the annealing behaviors. A more than 2-fold increase in the on-state (I ON ) current was achieved using the ETA. Simulations are conducted to investigate the location of the hot spot and how its change in heat profile activates the dopants.

  5. Performance improvement of junctionless field effect transistors using p-GaAs/AlGaAs heterostructure

    Science.gov (United States)

    Bajelan, F.; Goharrizi, A. Yazdanpanah; Faez, R.; Darvish, G.

    2017-10-01

    The performance analysis of junctionless (JL) gate-all-around (GAA) metal oxide semiconductor field effect transistors (MOSFETs) is investigated using the Non-Equilibrium Green's Function (NEGF) formalism. The main problem of JL transistors is found to be the OFF-state current. In the present work, the OFF-state current of such devices is decreased by choosing channel materials with a large band gap and heavy effective mass. Our simulation results show that the OFF-state current of JL transistors with p-type GaAs is less than that of n-type GaAs. Plus, the heterostructure (HES) channel is proposed in this study for improving the device characteristics of JL-FETs as compared to homostructure (HOS). Therefore, p-type GaAs and GaAs/AlGaAs are used as the channel material for HOS and HES devices, respectively. The simulation is performed for different thicknesses of GaAs and AlGaAs with a fixed diameter of 5 nm for the nanowire. It is shown that the optimum electronic characteristics of HES devices is achieved when the thicknesses of GaAs and AlGaAs layers are chosen to be 0.5 nm and 4 nm, respectively. OFF-state current (IOFF) of 5.32 × 10-16 A, ON-state current (ION) of 6.44 × 10-6 A, ON/OFF current ratio (ION/IOFF) of 1.21 × 1010, subthreshold slope (SS) of 60.8 mV/dec, drain induced barrier lowering (DIBL) of 4.6 mV/V, and threshold voltage (VTH) of 330 mV are obtained for the proposed HES JL-GAA-FET.

  6. Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode

    Science.gov (United States)

    Ali, Ghusoon M.

    2017-02-01

    An interdigitated extended gate field effect transistor (IEGFET) has been proposed as a modified pH sensor structure of an extended gate field effect transistor (EGFET). The reference electrode and the extended gate in the conventional device have been replaced by a single interdigitated extended gate. A metal-semiconductor-metal interdigitated extended gate containing two multi-finger Ni electrodes based on zinc oxide (ZnO) thin film as a pH-sensitive membrane. ZnO thin film was grown on a p-type Si (100) substrate by the sol-gel technique. The fabricated extended gate is connected to a commercial metal-oxide-semiconductor field-effect transistor device in CD4007UB. The experimental data show that this structure has real time and linear pH voltage and current sensitivities in a concentration range between pH 4 and 11. The voltage and current sensitivities are found to be about 22.4 mV/pH and 45 μA/pH, respectively. Reference electrode elimination makes the IEGFET device simple to fabricate, easy to carry out the measurements, needing a small volume of solution to test and suitable for disposable biosensor applications. Furthermore, this uncomplicated structure could be extended to fabricate multiple ions microsensors and lab-on-chip devices.

  7. Organic field-effect transistors using single crystals.

    Science.gov (United States)

    Hasegawa, Tatsuo; Takeya, Jun

    2009-04-01

    Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  8. Organic field-effect transistors using single crystals

    Directory of Open Access Journals (Sweden)

    Tatsuo Hasegawa and Jun Takeya

    2009-01-01

    Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  9. Lead iodide perovskite light-emitting field-effect transistor

    Science.gov (United States)

    Chin, Xin Yu; Cortecchia, Daniele; Yin, Jun; Bruno, Annalisa; Soci, Cesare

    2015-06-01

    Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

  10. Coupling between electrolyte and organic semiconductor in electrolyte-gated organic field effect transistors (Conference Presentation)

    Science.gov (United States)

    Biscarini, Fabio; Di Lauro, Michele; Berto, Marcello; Bortolotti, Carlo A.; Geerts, Yves H.; Vuillaume, Dominique

    2016-11-01

    Organic field effect transistors (OFET) operated in aqueous environments are emerging as ultra-sensitive biosensors and transducers of electrical and electrochemical signals from a biological environment. Their applications range from detection of biomarkers in bodily fluids to implants for bidirectional communication with the central nervous system. They can be used in diagnostics, advanced treatments and theranostics. Several OFET layouts have been demonstrated to be effective in aqueous operations, which are distinguished either by their architecture or by the respective mechanism of doping by the ions in the electrolyte solution. In this work we discuss the unification of the seemingly different architectures, such as electrolyte-gated OFET (EGOFET), organic electrochemical transistor (OECT) and dual-gate ion-sensing FET. We first demonstrate that these architectures give rise to the frequency-dependent response of a synapstor (synapse-like transistor), with enhanced or depressed modulation of the output current depending on the frequency of the time-dependent gate voltage. This behavior that was reported for OFETs with embedded metal nanoparticles shows the existence of a capacitive coupling through an equivalent network of RC elements. Upon the systematic change of ions in the electrolyte and the morphology of the charge transport layer, we show how the time scale of the synapstor is changed. We finally show how the substrate plays effectively the role of a second bottom gate, whose potential is actually fixed by the pH/composition of the electrolyte and the gate voltage applied.

  11. Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene.

    Science.gov (United States)

    Zheng, Chao; Huang, Le; Zhang, Hong; Sun, Zhongyue; Zhang, Zhiyong; Zhang, Guo-Jun

    2015-08-12

    Most graphene field-effect transistor (G-FET) biosensors are fabricated through a routine process, in which graphene is transferred onto a Si/SiO2 substrate and then devices are subsequently produced by micromanufacture processes. However, such a fabrication approach can introduce contamination onto the graphene surface during the lithographic process, resulting in interference for the subsequent biosensing. In this work, we have developed a novel directional transfer technique to fabricate G-FET biosensors based on chemical-vapor-deposition- (CVD-) grown single-layer graphene (SLG) and applied this biosensor for the sensitive detection of DNA. A FET device with six individual array sensors was first fabricated, and SLG obtained by the CVD-growth method was transferred onto the sensor surface in a directional manner. Afterward, peptide nucleic acid (PNA) was covalently immobilized on the graphene surface, and DNA detection was realized by applying specific target DNA to the PNA-functionalized G-FET biosensor. The developed G-FET biosensor was able to detect target DNA at concentrations as low as 10 fM, which is 1 order of magnitude lower than those reported in a previous work. In addition, the biosensor was capable of distinguishing the complementary DNA from one-base-mismatched DNA and noncomplementary DNA. The directional transfer technique for the fabrication of G-FET biosensors is simple, and the as-constructed G-FET DNA biosensor shows ultrasensitivity and high specificity, indicating its potential application in disease diagnostics as a point-of-care tool.

  12. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

    International Nuclear Information System (INIS)

    Yu Jun-Ting; Chen Shu-Ming; Chen Jian-Jun; Huang Peng-Cheng; Song Rui-Qiang

    2016-01-01

    Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. (paper)

  13. High-Performance Organic Field-Effect Transistors with Dielectric and Active Layers Printed Sequentially by Ultrasonic Spraying

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Ming [ORNL; Sanjib, Das [University of Tennessee, Knoxville (UTK); Chen, Jihua [ORNL; Keum, Jong Kahk [ORNL; Ivanov, Ilia N [ORNL; Gu, Gong [University of Tennessee, Knoxville (UTK); Geohegan, David B [ORNL; Xiao, Kai [ORNL

    2013-01-01

    High-performance, flexible organic field-effect transistors (OFETs) are reported with PVP dielectric and TIPS-PEN active layers sequentially deposited by ultrasonic spray-coating on plastic substrate. OFETs fabricated in ambient air with a bottom-gate/top-contact geometry are shown to achieve on/off ratios of >104 and mobilities as high as 0.35 cm2/Vs. These rival the characteristics of the best solution-processible small molecule FETs fabricated by other fabrication methods such as drop casting and ink-jet printing.

  14. A CMOS-MEMS arrayed resonant-gate field effect transistor (RGFET) oscillator

    Science.gov (United States)

    Chin, Chi-Hang; Li, Ming-Huang; Chen, Chao-Yu; Wang, Yu-Lin; Li, Sheng-Shian

    2015-11-01

    A high-frequency CMOS-MEMS arrayed resonant-gate field effect transistor (RGFET) fabricated by a standard 0.35 μm 2-poly-4-metal CMOS-MEMS platform is implemented to enable a Pierce-type oscillator. The proposed arrayed RGFET exhibits low motional impedance of only 5 kΩ under a purely capacitive transduction and decent power handling capability. With such features, the implemented oscillator shows impressive phase noise of  -117 dBc Hz-1 at the far-from-carrier offset (1 MHz). In this work, we design a clamped-clamped beam (CCB) arrayed resonator utilizing a high-velocity mechanical coupling scheme to serve as the resonant-gate array. To achieve a functional arrayed RGFET, a corresponding FET array is directly placed underneath the resonant gate array to convert the motional current on the resonant-gate array into a voltage output with a tunable transconductance gain. To understand the behavior of the proposed device, an equivalent circuit model consisting of the resonant unit and FET is also provided. To verify the effects of the post-CMOS process on device performance, a conventional MOS I D current measurement is carried out. Finally, a CMOS-MEMS arrayed RGFET oscillator is realized by utilizing a Pierce oscillator architecture, showing decent phase noise performance that benefits from the array design to alleviate the nonlinear effect of the resonant gate.

  15. High-Throughput Peptide Epitope Mapping Using Carbon Nanotube Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Steingrimur Stefansson

    2013-01-01

    Full Text Available Label-free and real-time detection technologies can dramatically reduce the time and cost of pharmaceutical testing and development. However, to reach their full promise, these technologies need to be adaptable to high-throughput automation. To demonstrate the potential of single-walled carbon nanotube field-effect transistors (SWCNT-FETs for high-throughput peptide-based assays, we have designed circuits arranged in an 8 × 12 (96-well format that are accessible to standard multichannel pipettors. We performed epitope mapping of two HIV-1 gp160 antibodies using an overlapping gp160 15-mer peptide library coated onto nonfunctionalized SWCNTs. The 15-mer peptides did not require a linker to adhere to the non-functionalized SWCNTs, and binding data was obtained in real time for all 96 circuits. Despite some sequence differences in the HIV strains used to generate these antibodies and the overlapping peptide library, respectively, our results using these antibodies are in good agreement with known data, indicating that peptides immobilized onto SWCNT are accessible and that linear epitope mapping can be performed in minutes using SWCNT-FET.

  16. Implementing Silicon Nanoribbon Field-Effect Transistors as Arrays for Multiple Ion Detection.

    Science.gov (United States)

    Stoop, Ralph L; Wipf, Mathias; Müller, Steffen; Bedner, Kristine; Wright, Iain A; Martin, Colin J; Constable, Edwin C; Fanget, Axel; Schönenberger, Christian; Calame, Michel

    2016-05-06

    Ionic gradients play a crucial role in the physiology of the human body, ranging from metabolism in cells to muscle contractions or brain activities. To monitor these ions, inexpensive, label-free chemical sensing devices are needed. Field-effect transistors (FETs) based on silicon (Si) nanowires or nanoribbons (NRs) have a great potential as future biochemical sensors as they allow for the integration in microscopic devices at low production costs. Integrating NRs in dense arrays on a single chip expands the field of applications to implantable electrodes or multifunctional chemical sensing platforms. Ideally, such a platform is capable of detecting numerous species in a complex analyte. Here, we demonstrate the basis for simultaneous sodium and fluoride ion detection with a single sensor chip consisting of arrays of gold-coated SiNR FETs. A microfluidic system with individual channels allows modifying the NR surfaces with self-assembled monolayers of two types of ion receptors sensitive to sodium and fluoride ions. The functionalization procedure results in a differential setup having active fluoride- and sodium-sensitive NRs together with bare gold control NRs on the same chip. Comparing functionalized NRs with control NRs allows the compensation of non-specific contributions from changes in the background electrolyte concentration and reveals the response to the targeted species.

  17. Implementing Silicon Nanoribbon Field-Effect Transistors as Arrays for Multiple Ion Detection

    Directory of Open Access Journals (Sweden)

    Ralph L. Stoop

    2016-05-01

    Full Text Available Ionic gradients play a crucial role in the physiology of the human body, ranging from metabolism in cells to muscle contractions or brain activities. To monitor these ions, inexpensive, label-free chemical sensing devices are needed. Field-effect transistors (FETs based on silicon (Si nanowires or nanoribbons (NRs have a great potential as future biochemical sensors as they allow for the integration in microscopic devices at low production costs. Integrating NRs in dense arrays on a single chip expands the field of applications to implantable electrodes or multifunctional chemical sensing platforms. Ideally, such a platform is capable of detecting numerous species in a complex analyte. Here, we demonstrate the basis for simultaneous sodium and fluoride ion detection with a single sensor chip consisting of arrays of gold-coated SiNR FETs. A microfluidic system with individual channels allows modifying the NR surfaces with self-assembled monolayers of two types of ion receptors sensitive to sodium and fluoride ions. The functionalization procedure results in a differential setup having active fluoride- and sodium-sensitive NRs together with bare gold control NRs on the same chip. Comparing functionalized NRs with control NRs allows the compensation of non-specific contributions from changes in the background electrolyte concentration and reveals the response to the targeted species.

  18. Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

    International Nuclear Information System (INIS)

    Song, In-Hyouk; Forfang, William B D; Cole, Bryan; Hee You, Byoung

    2014-01-01

    The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz. (paper)

  19. Impact of device engineering on analog/RF performances of tunnel field effect transistors

    Science.gov (United States)

    Vijayvargiya, V.; Reniwal, B. S.; Singh, P.; Vishvakarma, S. K.

    2017-06-01

    The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain underlap (UL) and different dielectric materials for the spacer and gate oxide on DG-TFET (double gate TFET) and its analog/RF performance for low power applications. Here, it is found that the drive current behavior in DG-TFET with a UL feature while implementing dielectric material for the spacer is different in comparison to that of DG-FET. Further, hetero gate dielectric-based DG-TFET (HGDG-TFET) is more resistive against drain-induced barrier lowering (DIBL) as compared to DG-TFET with high-k (HK) gate dielectric. Along with that, as compared to DG-FET, this paper also analyses the attributes of UL and dielectric material on analog/RF performance of DG-TFET in terms of transconductance (gm ), transconductance generation factor (TGF), capacitance, intrinsic resistance (Rdcr), cut-off frequency (F T), and maximum oscillation frequency (F max). The LK spacer-based HGDG-TFET with a gate-drain UL has the potential to improve the RF performance of device.

  20. Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

    Science.gov (United States)

    Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

    2018-02-01

    We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

  1. BioFET-SIM

    DEFF Research Database (Denmark)

    Hediger, M. R.; Martinez, K. L.; Nygård, J.

    2013-01-01

    Biosensors based on nanowire field effect transistor (FET) have received much attention in recent years as a way to achieve ultra-sensitive and label-free sensing of molecules of biological interest. The BioFET-SIM computer model permits the analysis and interpretation of experimental sensor...... signals through its web-based interface www.biofetsim.org. The model also allows for predictions of the effects of changes in the experimental setup on the sensor signal. After an introduction to nanowire-based FET biosensors, this chapter reviews the theoretical basis of BioFET-SIM models describing both...... single and multiple charges on the analyte. Afterwards the usage of the interface and its relative command line version is briefly shown. Finally, possible applications of the BioFET-SIM model are presented. Among the possible uses of the interface, the effects on the predicted signal of pH, buffer ionic...

  2. Design and Fabrication of a Carbone Nanotube Field Effect Transistor Based on Dielectrophoresis Technique and Low Cost Photolithography

    Directory of Open Access Journals (Sweden)

    Haider AL-Mumen

    2018-03-01

    Full Text Available In this work, Micro- and Nanofabrication technology was used to fabricate and demonstrate a simple Carbon nanotubes (CNTs field effect transistors (FETs which is constructed on Si/SiO2 substrate. Simple photolithography technique was used for patterning the photoresist using a mask and a UV LEDs. Thermal evaporator was utilized to deposit coper metal on the substrate. After liftoff, electrodes of 5 μm width and spacing of 3 μm were achieved. Deilecrophrisis technique was adopted to fetch the CNTs towards the fabricated electrode fingers.  The fabricated CNT-FETs exhibit high electron mobility, around 10000 cm2/Vs. Current transfer characteristic observed that the device has p-type semiconductor properties, which can be attributed to the oxygen molecules absorption of CNTs oxygen from the testing environment.

  3. Understanding noise suppression in heterojunction field-effect transistors

    International Nuclear Information System (INIS)

    Green, F.

    1996-01-01

    Full text: The enhanced transport properties displayed by quantum-well-confined, two-dimensional, electron systems underpin the success of heterojunction, field-effect transistors. At cryogenic temperatures, these devices exhibit impressive mobilities and, as a result, high signal gain and low noise. Conventional wisdom has it that the same favourable conditions also hold for normal room-temperature operation. In that case, however, high mobilities are precluded by abundant electron-phonon scattering. Our recent study of nonequilibrium current noise shows that quantum confinement, not high mobility, is the principal source of noise in these devices; this opens up new and exciting opportunities in low-noise transistor design. As trends in millimetre-wave technology push frequencies beyond 100 GHz, it is essential to develop a genuine understanding of noise processes in heterojunction devices

  4. Graphene-graphite oxide field-effect transistors.

    Science.gov (United States)

    Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

    2012-03-14

    Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

  5. Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.

    Science.gov (United States)

    Dey, Anil W; Svensson, Johannes; Ek, Martin; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik

    2013-01-01

    The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al., IEEE Int. Devices Meeting 2011, 15.1.1-15.1.4). The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors (TFETs), requires the implementation of advanced transistor architectures including FinFETs and nanowire devices. Moreover, integration of novel materials with high electron mobilities, such as III-V semiconductors and graphene, are also being considered to further enhance the device properties (del Alamo, Nature 2011, 479, 317-323, and Liao et al., Nature 2010, 467, 305-308). In nanowire devices, boosting the drive current at a fixed supply voltage or maintaining a constant drive current at a reduced supply voltage may be achieved by increasing the cross-sectional area of a device, however at the cost of deteriorated electrostatics. A gate-all-around nanowire device architecture is the most favorable electrostatic configuration to suppress short channel effects; however, the arrangement of arrays of parallel vertical nanowires to address the drive current predicament will require additional chip area. The use of a core-shell nanowire with a radial heterojunction in a transistor architecture provides an attractive means to address the drive current issue without compromising neither chip area nor device electrostatics. In addition to design advantages of a radial transistor architecture, we in this work illustrate the benefit in terms of drive current per unit chip area and compare the experimental data for axial GaSb/InAs Esaki diodes and TFETs to their radial counterparts and normalize the electrical data to the largest cross-sectional area of the nanowire, i.e. the occupied chip area, assuming a vertical device geometry. Our data on lateral devices show that radial Esaki diodes deliver almost 7 times higher peak

  6. Directly grown nanocrystalline diamond field-effect transistor microstructures

    Czech Academy of Sciences Publication Activity Database

    Kozak, Halyna; Kromka, Alexander; Babchenko, Oleg; Rezek, Bohuslav

    2010-01-01

    Roč. 8, č. 3 (2010), s. 482-487 ISSN 1546-198X R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR(CZ) IAAX00100902; GA AV ČR KAN400100652 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * microstructures * atomic force microscopy * surface conductivity * field-effect transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.602, year: 2010

  7. ReS2-based interlayer tunnel field effect transistor

    Science.gov (United States)

    Mohammed, Omar B.; Movva, Hema C. P.; Prasad, Nitin; Valsaraj, Amithraj; Kang, Sangwoo; Corbet, Chris M.; Taniguchi, Takashi; Watanabe, Kenji; Register, Leonard F.; Tutuc, Emanuel; Banerjee, Sanjay K.

    2017-12-01

    In this study, we report the fabrication and characterization of a vertical resonant interlayer tunneling field-effect transistor created using exfoliated, few-layer rhenium disulfide (ReS2) flakes as the electrodes and hexagonal boron nitride as the tunnel barrier. Due to the Γ-point conduction band minimum, the ReS2 based system offers the possibility of resonant interlayer tunneling and associated low-voltage negative differential resistance (NDR) without rotational alignment of the electrode crystal orientations. Substantial NDR is observed, which appears consistent with in-plane crystal momentum conserving tunneling, although considerably broadened by scattering consistent within low mobility ReS2 flakes.

  8. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

    Science.gov (United States)

    Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

    2017-04-05

    In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

  9. Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

    Science.gov (United States)

    Rigante, Sara; Scarbolo, Paolo; Wipf, Mathias; Stoop, Ralph L; Bedner, Kristine; Buitrago, Elizabeth; Bazigos, Antonios; Bouvet, Didier; Calame, Michel; Schönenberger, Christian; Ionescu, Adrian M

    2015-05-26

    Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suitable device architectures for sensing integrated circuits. In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon by a fully CMOS compatible approach, as an alternative to the widely investigated silicon nanowires on silicon-on-insulator substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully depleted FinFETs with critical dimensions on the order of 20 nm and HfO2 as a high-k gate insulator have been developed and characterized, showing excellent electrical properties, subthreshold swing, SS ∼ 70 mV/dec, and on-to-off current ratio, Ion/Ioff ∼ 10(6), at room temperature. The same FinFET architecture is validated as a highly sensitive, stable, and reproducible pH sensor. An intrinsic sensitivity close to the Nernst limit, S = 57 mV/pH, is achieved. The pH response in terms of output current reaches Sout = 60%. Long-term measurements have been performed over 4.5 days with a resulting drift in time δVth/δt = 0.10 mV/h. Finally, we show the capability to reproduce experimental data with an extended three-dimensional commercial finite element analysis simulator, in both dry and wet environments, which is useful for future advanced sensor design and optimization.

  10. SENSOR GAS BERBASIS FILM TIPIS DENGAN KONFIGURASI TRANSISTOR EFEK MEDAN (FET UNTUK DETEKSI GAS CO

    Directory of Open Access Journals (Sweden)

    Sujarwata Sujarwata

    2013-02-01

    Full Text Available Pembuatan dan karakterisasi Transistor Efek Medan (FET berbasis film tipis dengan struktur bottom-contact dan panjang channel 100 ?m untuk aplikasi sensor gas. Pembuatan FET dengan cara: permulaan dilakukan pencucian substrat Si/SiO 2 dengan etanol dalam ultrasonic cleaner, kemudian dilakukan pendeposisian elektroda source/ drain dengan metode penguapan hampa udara dan teknik lithography. Selanjutnya dilakukan deposisi film tipis CuPc diantara source/drain sebagai panjang channel dan elektrode gate. Karakteristik FET, untuk daerah aktif untuk V DS (2,80 s/d 3,42 V dan kuat arus I (0,00095 s/d 0,00169 A. FET akan aktif beroperasi hanya diperlukan tegangan V DS (2,79 V s/d 3,43 V dan dengan ukuran sangat kecil ( 1,5 mm x 3,1 mm serta jarak antara S ke D adalah 100 ?m. Aplikasi sensor gas telah dilakukan untuk mendeteksi gas CO, diperoleh hasil untuk response time 90 detik dan recovery time 120 detik. DS

  11. Nano field effect transistors as basic building blocks for sensing

    OpenAIRE

    Keller, Dino

    2008-01-01

    SiNW FETs and CNT FETs have been studied as candidates for integrable biosensors. Both types show sensing capability, CNT FETs even for uncharged molecules. The “top–down” process developed for SiNW FET fabrication gives much freedom in device designing and is fully compatible with CMOS production schemes. Due to the fact that the SiNW fabrication reported here uses the same structuring techniques as in CMOS processing, it is very reliable. The fabrication of CNT FETs is bas...

  12. High-performance silicon nanotube tunneling FET for ultralow-power logic applications

    KAUST Repository

    Fahad, Hossain M.

    2013-03-01

    To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET\\'s effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.

  13. Liquid Crystals for Organic Field-Effect Transistors

    Science.gov (United States)

    O'Neill, Mary; Kelly, Stephen M.

    Columnar, smectic and lamellar polymeric liquid crystals are widely recognized as very promising charge-transporting organic semiconductors due to their ability to spontaneously self-assemble into highly ordered domains in uniform thin films over large areas. The transport properties of smectic and columnar liquid crystals are discussed in Chaps. 2 (10.1007/978-90-481-2873-0_2) and 3 (10.1007/978-90-481-2873-0_3). Here we examine their application to organic field-effect transistors (OFETs): after a short introduction in Sect. 9.1 we introduce the OFET configuration and show how the mobility is measured in Sect. 9.2. Section 9.3 discusses polymeric liquid crystalline semiconductors in OFETs. We review research that shows that annealing of polymers in a fluid mesophase gives a more ordered microcrystalline morphology on cooling than that kinetically determined by solution processing of the thin film. We also demonstrate the benefits of monodomain alignment and show the application of liquid crystals in light-emitting field-effect transistors. Some columnar and smectic phases are highly ordered with short intermolecular separation to give large π-π coupling. We discuss their use in OFETs in Sects. 9.4, and 9.5 respectively. Section 9.6 summarises the conclusions of the chapter.

  14. Design and Simulation of Nano Wire FET

    OpenAIRE

    Anil Kumar, M; Kiran, Y N S Sai; Jagadeesh, U; Durga Prakash, M

    2017-01-01

    International audience; As the era of classical planar metal-oxide-semiconductor field-effect transistors (MOSFETs) comes to an end, the semiconductor industry is beginning to adopt 3D device architectures, such as FETs, starting at the 22 nm technology node. Since physical limits such as short channel effect (SCE) and self-heating may dominate, it may be difficult to scale Si FinFET below 10 nm. In this regard, transistors with different materials, geometries, or operating principles may hel...

  15. Capacitance–voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

    Science.gov (United States)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

    2018-02-01

    Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance–voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

  16. A comparative study of spin coated and floating film transfer method coated poly (3-hexylthiophene)/poly (3-hexylthiophene)-nanofibers based field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, Shashi; Balasubramanian, S. K. [Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India); Takashima, Wataru [Research Center for Advanced Eco-fitting Technology, Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196 (Japan); Nagamatsu, S. [Department of Computer Science and Systems Engineerings, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502 (Japan); Prakash, Rajiv, E-mail: rajivprakash12@yahoo.com [School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2014-09-07

    A comparative study on electrical performance, optical properties, and surface morphology of poly(3-hexylthiophene) (P3HT) and P3HT-nanofibers based “normally on” type p-channel field effect transistors (FETs), fabricated by two different coating techniques has been reported here. Nanofibers are prepared in the laboratory with the approach of self-assembly of P3HT molecules into nanofibers in an appropriate solvent. P3HT (0.3 wt. %) and P3HT-nanofibers (∼0.25 wt. %) are used as semiconductor transport materials for deposition over FETs channel through spin coating as well as through our recently developed floating film transfer method (FTM). FETs fabricated using FTM show superior performance compared to spin coated devices; however, the mobility of FTM films based FETs is comparable to the mobility of spin coated one. The devices based on P3HT-nanofibers (using both the techniques) show much better performance in comparison to P3HT FETs. The best performance among all the fabricated organic field effect transistors are observed for FTM coated P3HT-nanofibers FETs. This improved performance of nanofiber-FETs is due to ordering of fibers and also due to the fact that fibers offer excellent charge transport facility because of point to point transmission. The optical properties and structural morphologies (P3HT and P3HT-nanofibers) are studied using UV-visible absorption spectrophotometer and atomic force microscopy , respectively. Coating techniques and effect of fiber formation for organic conductors give information for fabrication of organic devices with improved performance.

  17. A comparative study of spin coated and floating film transfer method coated poly (3-hexylthiophene)/poly (3-hexylthiophene)-nanofibers based field effect transistors

    International Nuclear Information System (INIS)

    Tiwari, Shashi; Balasubramanian, S. K.; Takashima, Wataru; Nagamatsu, S.; Prakash, Rajiv

    2014-01-01

    A comparative study on electrical performance, optical properties, and surface morphology of poly(3-hexylthiophene) (P3HT) and P3HT-nanofibers based “normally on” type p-channel field effect transistors (FETs), fabricated by two different coating techniques has been reported here. Nanofibers are prepared in the laboratory with the approach of self-assembly of P3HT molecules into nanofibers in an appropriate solvent. P3HT (0.3 wt. %) and P3HT-nanofibers (∼0.25 wt. %) are used as semiconductor transport materials for deposition over FETs channel through spin coating as well as through our recently developed floating film transfer method (FTM). FETs fabricated using FTM show superior performance compared to spin coated devices; however, the mobility of FTM films based FETs is comparable to the mobility of spin coated one. The devices based on P3HT-nanofibers (using both the techniques) show much better performance in comparison to P3HT FETs. The best performance among all the fabricated organic field effect transistors are observed for FTM coated P3HT-nanofibers FETs. This improved performance of nanofiber-FETs is due to ordering of fibers and also due to the fact that fibers offer excellent charge transport facility because of point to point transmission. The optical properties and structural morphologies (P3HT and P3HT-nanofibers) are studied using UV-visible absorption spectrophotometer and atomic force microscopy , respectively. Coating techniques and effect of fiber formation for organic conductors give information for fabrication of organic devices with improved performance

  18. BioFET-SIM

    DEFF Research Database (Denmark)

    Hediger, M. R.; Martinez, K. L.; Nygård, J.

    2013-01-01

    Biosensors based on nanowire field effect transistor (FET) have received much attention in recent years as a way to achieve ultra-sensitive and label-free sensing of molecules of biological interest. The BioFET-SIM computer model permits the analysis and interpretation of experimental sensor sign...... strength, analyte concentration, and analyte relative orientation on nanowire surface are illustrated. Wherever possible, a comparison to experimental data available in literature is given, displaying the potential of BioFETSIM for interpreting experimental results.......Biosensors based on nanowire field effect transistor (FET) have received much attention in recent years as a way to achieve ultra-sensitive and label-free sensing of molecules of biological interest. The BioFET-SIM computer model permits the analysis and interpretation of experimental sensor...... signals through its web-based interface www.biofetsim.org. The model also allows for predictions of the effects of changes in the experimental setup on the sensor signal. After an introduction to nanowire-based FET biosensors, this chapter reviews the theoretical basis of BioFET-SIM models describing both...

  19. High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor.

    Science.gov (United States)

    Song, Xiaoxian; Zhang, Yating; Zhang, Haiting; Yu, Yu; Cao, Mingxuan; Che, Yongli; Wang, Jianlong; Dai, Haitao; Yang, Junbo; Ding, Xin; Yao, Jianquan

    2016-10-07

    Most lateral PbSe quantum dot field effect transistors (QD FETs) show a low on current/off current (I on/I off) ratio in charge transport measurements. A new strategy to provide generally better performance is to design PbSe QD FETs with vertical architecture, in which the structure parameters can be tuned flexibly. Here, we fabricated a novel room-temperature operated vertical quantum dot field effect transistor with a channel of 580 nm, where self-assembled Au/Ag nanowires served as source transparent electrodes and PbSe quantum dots as active channels. Through investigating the electrical characterization, the ambipolar device exhibited excellent characteristics with a high I on/I off current ratio of about 1 × 10(5) and a low sub-threshold slope (0.26 V/decade) in the p-type regime. The all-solution processing vertical architecture provides a convenient way for low cost, large-area integration of the device.

  20. Gas Sensors Based on Polymer Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Aifeng Lv

    2017-01-01

    Full Text Available This review focuses on polymer field-effect transistor (PFET based gas sensor with polymer as the sensing layer, which interacts with gas analyte and thus induces the change of source-drain current (ΔISD. Dependent on the sensing layer which can be semiconducting polymer, dielectric layer or conducting polymer gate, the PFET sensors can be subdivided into three types. For each type of sensor, we present the molecular structure of sensing polymer, the gas analyte and the sensing performance. Most importantly, we summarize various analyte–polymer interactions, which help to understand the sensing mechanism in the PFET sensors and can provide possible approaches for the sensor fabrication in the future.

  1. Touching polymer chains by organic field-effect transistors.

    Science.gov (United States)

    Shao, Wei; Dong, Huanli; Wang, Zhigang; Hu, Wenping

    2014-09-17

    Organic field-effect transistors (OFETs) are used to directly "touch" the movement and dynamics of polymer chains, and then determine Tg. As a molecular-level probe, the conducting channel of OFETs exhibits several unique advantages: 1) it directly detects the motion and dynamics of polymer chain at Tg; 2) it allows the measurement of size effects in ultrathin polymer films (even down to 6 nm), which bridges the gap in understanding effects between surface and interface. This facile and reliable determination of Tg of polymer films and the understanding of polymer chain dynamics guide a new prospect for OFETs besides their applications in organic electronics and casting new light on the fundamental understanding of the nature of polymer chain dynamics.

  2. Two dimensional analytical model for a reconfigurable field effect transistor

    Science.gov (United States)

    Ranjith, R.; Jayachandran, Remya; Suja, K. J.; Komaragiri, Rama S.

    2018-02-01

    This paper presents two-dimensional potential and current models for a reconfigurable field effect transistor (RFET). Two potential models which describe subthreshold and above-threshold channel potentials are developed by solving two-dimensional (2D) Poisson's equation. In the first potential model, 2D Poisson's equation is solved by considering constant/zero charge density in the channel region of the device to get the subthreshold potential characteristics. In the second model, accumulation charge density is considered to get above-threshold potential characteristics of the device. The proposed models are applicable for the device having lightly doped or intrinsic channel. While obtaining the mathematical model, whole body area is divided into two regions: gated region and un-gated region. The analytical models are compared with technology computer-aided design (TCAD) simulation results and are in complete agreement for different lengths of the gated regions as well as at various supply voltage levels.

  3. A tunable colloidal quantum dot photo field-effect transistor

    KAUST Repository

    Ghosh, Subir

    2011-01-01

    We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel. © 2011 American Institute of Physics.

  4. Theoretical study of phosphorene tunneling field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Jiwon; Hobbs, Chris [SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)

    2015-02-23

    In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe{sub 2} TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe{sub 2} TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.

  5. Tin - an unlikely ally for silicon field effect transistors?

    KAUST Repository

    Hussain, Aftab M.

    2014-01-13

    We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Electronic Model of a Ferroelectric Field Effect Transistor

    Science.gov (United States)

    MacLeod, Todd C.; Ho, Fat Duen; Russell, Larry (Technical Monitor)

    2001-01-01

    A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

  7. Slowing DNA Translocation in a Nanofluidic Field-Effect Transistor.

    Science.gov (United States)

    Liu, Yifan; Yobas, Levent

    2016-04-26

    Here, we present an experimental demonstration of slowing DNA translocation across a nanochannel by modulating the channel surface charge through an externally applied gate bias. The experiments were performed on a nanofluidic field-effect transistor, which is a monolithic integrated platform featuring a 50 nm-diameter in-plane alumina nanocapillary whose entire length is surrounded by a gate electrode. The field-effect transistor behavior was validated on the gating of ionic conductance and protein transport. The gating of DNA translocation was subsequently studied by measuring discrete current dips associated with single λ-DNA translocation events under a source-to-drain bias of 1 V. The translocation speeds under various gate bias conditions were extracted by fitting event histograms of the measured translocation time to the first passage time distributions obtained from a simple 1D biased diffusion model. A positive gate bias was observed to slow the translocation of single λ-DNA chains markedly; the translocation speed was reduced by an order of magnitude from 18.4 mm/s obtained under a floating gate down to 1.33 mm/s under a positive gate bias of 9 V. Therefore, a dynamic and flexible regulation of the DNA translocation speed, which is vital for single-molecule sequencing, can be achieved on this device by simply tuning the gate bias. The device is realized in a conventional semiconductor microfabrication process without the requirement of advanced lithography, and can be potentially further developed into a compact electronic single-molecule sequencer.

  8. Semiconductor data book characteristics of approx. 10,000 transistors, FETs, UJTs, diodes, rectifiers, optical semiconductors, triacs and SCRs

    CERN Document Server

    Ball, A M

    1981-01-01

    Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.

  9. Isolation and Identification of Post-Transcriptional Gene Silencing-Related Micro-RNAs by Functionalized Silicon Nanowire Field-effect Transistor

    Science.gov (United States)

    Chen, Kuan-I.; Pan, Chien-Yuan; Li, Keng-Hui; Huang, Ying-Chih; Lu, Chia-Wei; Tang, Chuan-Yi; Su, Ya-Wen; Tseng, Ling-Wei; Tseng, Kun-Chang; Lin, Chi-Yun; Chen, Chii-Dong; Lin, Shih-Shun; Chen, Yit-Tsong

    2015-11-01

    Many transcribed RNAs are non-coding RNAs, including microRNAs (miRNAs), which bind to complementary sequences on messenger RNAs to regulate the translation efficacy. Therefore, identifying the miRNAs expressed in cells/organisms aids in understanding genetic control in cells/organisms. In this report, we determined the binding of oligonucleotides to a receptor-modified silicon nanowire field-effect transistor (SiNW-FET) by monitoring the changes in conductance of the SiNW-FET. We first modified a SiNW-FET with a DNA probe to directly and selectively detect the complementary miRNA in cell lysates. This SiNW-FET device has 7-fold higher sensitivity than reverse transcription-quantitative polymerase chain reaction in detecting the corresponding miRNA. Next, we anchored viral p19 proteins, which bind the double-strand small RNAs (ds-sRNAs), on the SiNW-FET. By perfusing the device with synthesized ds-sRNAs of different pairing statuses, the dissociation constants revealed that the nucleotides at the 3‧-overhangs and pairings at the terminus are important for the interactions. After perfusing the total RNA mixture extracted from Nicotiana benthamiana across the device, this device could enrich the ds-sRNAs for sequence analysis. Finally, this bionanoelectronic SiNW-FET, which is able to isolate and identify the interacting protein-RNA, adds an additional tool in genomic technology for the future study of direct biomolecular interactions.

  10. Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yabin [Univ. of California, Berkeley, CA (United States); Ke, Feng [Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Ci, Penghong [Univ. of California, Berkeley, CA (United States); Ko, Changhyun [Univ. of California, Berkeley, CA (United States); Park, Taegyun [Univ. of California, Berkeley, CA (United States); Saremi, Sahar [Univ. of California, Berkeley, CA (United States); Liu, Huili [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lee, Yeonbae [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Suh, Joonki [Univ. of California, Berkeley, CA (United States); Martin, Lane W. [Univ. of California, Berkeley, CA (United States); Ager, Joel W. [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Chen, Bin [Center for High Pressure Science and Technology Advanced Research, Shanghai (China); Wu, Junqiao [Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-12-08

    Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. In this paper, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS2 and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS2 can all be significantly enhanced with pressure. Finally, we expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.

  11. Targeting Antibodies to Carbon Nano tube Field Effect Transistors by Pyrene Hydrazide Modification of Heavy Chain Carbohydrates

    International Nuclear Information System (INIS)

    Stefansson, S.; Ahn, S.N.; Kwon, H.H.

    2012-01-01

    Many carbon nano tube field-effect transistor (CNT-FET) studies have used immobilized antibodies as the ligand binding moiety. However, antibodies are not optimal for CNT-FET detection due to their large size and charge. Their size can prevent ligands from reaching within the Debye length of the CNTs and a layer of charged antibodies on the circuits can drown out any ligand signal. In an attempt to minimize the antibody footprint on CNT-FETs, we examined whether pyrene hydrazide modification of antibody carbohydrates could reduce the concentration required to functionalized CNT circuits. The carbohydrates are almost exclusively on the antibody Fc region and this site-specific modification could mediate uniform antibody orientation on the CNTs. We compared the hydrazide modification of anti-E. coli O157:H7 polyclonal antibodies to pyrenebutanoic acid succinimidyl ester-coated CNTs and carbodiimide-mediated antibody CNT attachment. Our results show that the pyrene hydrazide modification was superior to those methods with respect to bacteria detection and less than 1 nM labeled antibody was required to functionalized the circuits.

  12. Field effect transistors and phototransistors based upon p-type solution-processed PbS nanowires

    Science.gov (United States)

    Giraud, Paul; Hou, Bo; Pak, Sangyeon; Inn Sohn, Jung; Morris, Stephen; Cha, SeungNam; Kim, Jong Min

    2018-02-01

    We demonstrate the fabrication of solution processed highly crystalline p-type PbS nanowires via the oriented attachment of nanoparticles. The analysis of single nanowire field effect transistor (FET) devices revealed a hole conduction behaviour with average mobilities greater than 30 cm2 V-1 s-1, which is an order of magnitude higher than that reported to date for p-type PbS colloidal nanowires. We have investigated the response of the FETs to near-infrared light excitation and show herein that the nanowires exhibited gate-dependent photo-conductivities, enabling us to tune the device performances. The responsivity was found to be greater than 104 A W-1 together with a detectivity of 1013 Jones, which benefits from a photogating effect occurring at negative gate voltages. These encouraging detection parameters are accompanied by relatively short switching times of 15 ms at positive gate voltages, resulting from a combination of the standard photoconduction and the high crystallinity of the nanowires. Collectively, these results indicate that solution-processed PbS nanowires are promising nanomaterials for infrared photodetectors as well as p-type nanowire FETs.

  13. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  14. Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

    Science.gov (United States)

    Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

    2018-01-01

    Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

  15. In-situ SiN{sub x}/InN structures for InN field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

    2016-04-04

    Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

  16. Nozzle-jet printed flexible field-effect transistor biosensor for high performance glucose detection.

    Science.gov (United States)

    Bhat, Kiesar Sideeq; Ahmad, Rafiq; Yoo, Jin-Young; Hahn, Yoon-Bong

    2017-11-15

    Printable electronics is a subject of great interest for low-cost, facile and environmentally-friendly large scale device production. But, it still remains challenging for printable biosensor development. Herein, we present the fabrication of nozzle-jet printed flexible field-effect transistor (FET) glucose biosensor. The silver source-drain electrodes and ZnO seed layers were printed on flexible substrate by nozzle-jet printer followed by ZnO nanorods (ZnO NRs) synthesis and glucose oxidase (GOx) immobilization. Utilization of nozzle-jet printing methods resulted in highly reproducible electrodes with well-defined vertical grown ZnO NRs for high GOx loading and enhanced glucose sensing performance in a wide glucose detection range. The stability, anti-interference ability, reproducibility, reusability, and applicability in human serum samples were also assessed. Overall, biosensor fabrication using nozzle-jet printer will not only provide large scale production of highly reproducible electrodes but also reduce the fabrication cost. Additionally, printed electrodes can be modified accordingly for different analyte detection. Copyright © 2017 Elsevier Inc. All rights reserved.

  17. Dual metal gate tunneling field effect transistors based on MOSFETs: A 2-D analytical approach

    Science.gov (United States)

    Ramezani, Zeinab; Orouji, Ali A.

    2018-01-01

    A novel 2-D analytical drain current model of novel Dual Metal Gate Tunnel Field Effect Transistors Based on MOSFETs (DMG-TFET) is presented in this paper. The proposed Tunneling FET is extracted from a MOSFET structure by employing an additional electrode in the source region with an appropriate work function to induce holes in the N+ source region and hence makes it as a P+ source region. The electric field is derived which is utilized to extract the expression of the drain current by analytically integrating the band to band tunneling generation rate in the tunneling region based on the potential profile by solving the Poisson's equation. Through this model, the effects of the thin film thickness and gate voltage on the potential, the electric field, and the effects of the thin film thickness on the tunneling current can be studied. To validate our present model we use SILVACO ATLAS device simulator and the analytical results have been compared with it and found a good agreement.

  18. A comprehensive model on field-effect pnpn devices (Z2-FET)

    Science.gov (United States)

    Taur, Yuan; Lacord, Joris; Parihar, Mukta Singh; Wan, Jing; Martinie, Sebastien; Lee, Kyunghwa; Bawedin, Maryline; Barbe, Jean-Charles; Cristoloveanu, Sorin

    2017-08-01

    A comprehensive model for field-effect pnpn devices (Z2-FET) is presented. It is based on three current continuity equations coupled to two MOS equations. The model reproduces the characteristic S-shaped I-V curve when the device is driven by a current source. The negative resistance region at intermediate currents occurs as the center junction undergoes a steep transition from reverse to forward bias. Also playing a vital role are the mix and match of the minority carrier diffusion current and the generation recombination current. Physical insights to the key mechanisms at work are gained by regional approximations of the model, from which analytical expressions for the maximum and minimum voltages at the switching points are derived. From 1981 to 2001, he was with the Silicon Technology Department of IBM Thomas J. Watson Research Center, Yorktown Heights, New York, where he was Manager of Exploratory Devices and Processes. Areas in which he has worked and published include latchup-free 1-um CMOS, self-aligned TiSi2, 0.5-um CMOS and BiCMOS, shallow trench isolation, 0.25-um CMOS with n+/p + poly gates, SOI, low-temperature CMOS, and 0.1-um CMOS. Since October 2001, he has been a professor in the Department of Electrical and Computer Engineering, University of California, San Diego. Dr. Yuan Taur was elected a Fellow of the IEEE in 1998. He has served as Editor-in-Chief of the IEEE Electron Device Letters from 1999 to 2011. He authored or co-authored over 200 technical papers and holds 14 U.S. patents. He co-authored a book, ;Fundamentals of Modern VLSI Devices,; published by Cambridge University Press in 1998. The 2nd edition was published in 2009. Dr. Yuan Taur received IEEE Electron Devices Society's J. J. Ebers Award in 2012 ;for contributions to the advancement of several generations of CMOS process technologies.;

  19. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111

    Directory of Open Access Journals (Sweden)

    J. Hennig

    2015-07-01

    Full Text Available We report on GaN based field-effect transistor (FET structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally xIn = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InxGa1−xN/GaN/AlN/Al0.87In0.13N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of ISD = 1300 mA/mm (560 mA/mm. In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  20. Tailoring Functional Interlayers in Organic Field-Effect Transistor Biosensors.

    Science.gov (United States)

    Magliulo, Maria; Manoli, Kyriaki; Macchia, Eleonora; Palazzo, Gerardo; Torsi, Luisa

    2015-12-09

    This review aims to provide an update on the development involving dielectric/organic semiconductor (OSC) interfaces for the realization of biofunctional organic field-effect transistors (OFETs). Specific focus is given on biointerfaces and recent technological approaches where biological materials serve as interlayers in back-gated OFETs for biosensing applications. Initially, to better understand the effects produced by the presence of biomolecules deposited at the dielectric/OSC interfacial region, the tuning of the dielectric surface properties by means of self-assembled monolayers is discussed. Afterward, emphasis is given to the modification of solid-state dielectric surfaces, in particular inorganic dielectrics, with biological molecules such as peptides and proteins. Special attention is paid on how the presence of an interlayer of biomolecules and bioreceptors underneath the OSC impacts on the charge transport and sensing performance of the device. Moreover, naturally occurring materials, such as carbohydrates and DNA, used directly as bulk gating materials in OFETs are reviewed. The role of metal contact/OSC interface in the overall performance of OFET-based sensors is also discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Organic field-effect transistor-based gas sensors.

    Science.gov (United States)

    Zhang, Congcong; Chen, Penglei; Hu, Wenping

    2015-04-21

    Organic field-effect transistors (OFETs) are one of the key components of modern organic electronics. While the past several decades have witnessed huge successes in high-performance OFETs, their sophisticated functionalization with regard to the responses towards external stimulations has also aroused increasing attention and become an important field of general concern. This is promoted by the inherent merits of organic semiconductors, including considerable variety in molecular design, low cost, light weight, mechanical flexibility, and solution processability, as well as by the intrinsic advantages of OFETs including multiparameter accessibility and ease of large-scale manufacturing, which provide OFETs with great potential as portable yet reliable sensors offering high sensitivity, selectivity, and expeditious responses. With special emphases on the works achieved since 2009, this tutorial review focuses on OFET-based gas sensors. The working principles of this type of gas sensors are discussed in detail, the state-of-the-art protocols developed for high-performance gas sensing are highlighted, and the advanced gas discrimination systems in terms of sensory arrays of OFETs are also introduced. This tutorial review intends to provide readers with a deep understanding for the future design of high-quality OFET gas sensors for potential uses.

  2. Low frequency noise in tunneling field effect transistors

    Science.gov (United States)

    Bu, S. T.; Huang, D. M.; Jiao, G. F.; Yu, H. Y.; Li, Ming-Fu

    2017-11-01

    An analytical model is developed for the fluctuation of the electrostatic potential induced by a charged trap in the gate oxide in tunneling field effect transistor (TFET). The model is applied to get the fluctuation of the drain current induced by an interface trap in TFET. A low frequency noise model based on the current transportation through the tunneling and the channel is proposed. The dependency of the normalized power spectra SId/Id2 on the frequency f and the gate bias Vg for TFET is obtained. The noise spectra in TFET are found to be very different from those of conventional MOSFETs, and have the superposition of Lorentzian and 1/f lineshapes with the former associated with tunneling and the later with channel transportation. The potential and current models are compared with TCAD simulation. The calculated IdVg and the noise spectra are also compared with our experimental observations. The results show that the normalized spectra of the current noise due to the tunneling are more significantly affected by Vg than that due to the transportation through the channel. The results also show that the noise from the channel is dominated by the mobility fluctuation rather than the carrier number fluctuation.

  3. Tunnel field-effect transistor with two gated intrinsic regions

    Directory of Open Access Journals (Sweden)

    Y. Zhang

    2014-07-01

    Full Text Available In this paper, we propose and validate (using simulations a novel design of silicon tunnel field-effect transistor (TFET, based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of switching performance compared with more conventional devices based on p-i-n structure. With independent gate voltages applied to two gated intrinsic regions, band-to-band tunneling (BTBT could take place at the p-n junction, and no abrupt degenerate doping profile is required. We developed single-side-gate (SSG structure and double-side-gate (DSG structure. SSG devices with HfO2 gate dielectric have a point subthreshold swing of 9.58 mV/decade, while DSG devices with polysilicon gate electrode material and HfO2 gate dielectric have a point subthreshold swing of 16.39 mV/decade. These DSG devices have ON-current of 0.255 μA/μm, while that is lower for SSG devices. Having two nano-scale independent gates will be quite challenging to realize with good uniformity across the wafer and the improved behavior of our TFET makes it a promising steep-slope switch candidate for further investigations.

  4. Solution-processed barium salts as charge injection layers for high performance N-channel organic field-effect transistors.

    Science.gov (United States)

    Kim, Nam-Koo; Khim, Dongyoon; Xu, Yong; Lee, Seung-Hoon; Kang, Minji; Kim, Jihong; Facchetti, Antonio; Noh, Yong-Young; Kim, Dong-Yu

    2014-06-25

    N-channel organic field-effect transistors (OFETs) have generally shown lower field-effect mobilities (μFET) than their p-type counterparts. One of the reasons is the energetic misalignment between the work function (WF) of commonly used charge injection electrode, i.e. gold (Au), and the lowest unoccupied molecular orbital (LUMO) of n-channel electron-transporting organic semiconductors. Here, we report barium salts as solution-processed interlayers, to improve the electron-injection and/or hole-blocking in top-gate/bottom-contact n-channel OFETs, based on poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-dithiophene)} (P(NDI2OD-T2)) and phenyl-C61-butyric acid methyl ester (PC61BM). Two different barium salts, barium hydroxide (Ba(OH)2) and barium chloride (Ba(Cl)2), are employed as the ultrathin interlayer (∼2 nm); and they effectively tune the WF of Au from 4.9 eV, to as low as 3.5 eV. The resulting n-channel OFETs exhibit significantly improved μFET, approaching 2.6 cm(2)/(V s) and 0.1 cm(2)/(V s) for the best P(NDI2OD-T2) and PC61BM devices, respectively, with Ba(OH)2 as interlayer.

  5. Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment

    Science.gov (United States)

    Kang, Won-Mook; Lee, SungTae; Cho, In-Tak; Park, Tae Hyung; Shin, Hyeonwoo; Hwang, Cheol Seong; Lee, Changhee; Park, Byung-Gook; Lee, Jong-Ho

    2018-02-01

    This paper investigates the effect of an oxygen (O2) plasma treatment on multi-layer tungsten diselenide (WSe2) field-effect transistor (FET) by forming tungsten trioxide (WO3) layers. Palladium (Pd), which is known to form an Ohmic contact with WSe2, is used for the source and drain (S/D) contact electrodes as a control group for metal variables. And then, Nickel (Ni), which is thought to form a Schottky contact with WSe2 experimentally, is used as an experimental group. For both cases of the control group and the experimental group, the electrical characteristics including drain current (ID), on/off ratio (ION/IOFF), subthreshold swing (SS) and field effect mobility (μeff) are analyzed according to the presence or absence of WO3. In case of adopting the WO3 contact layer between the WSe2 and the Ni for the S/D contact electrode, we observe a remarkable improvement in ID, ION/IOFF, μeff, and SS compared to the case without the WO3 contact layer. The analyzed electrical characteristics show that an efficient hole-injection contact was achieved for the multi-layer WSe2 FET by the O2 plasma treatment, which leads to the formation of an Ohmic-like contact at an electrode/WSe2 interface.

  6. High Mobility of Graphene-Based Flexible Transparent Field Effect Transistors Doped with TiO2 and Nitrogen-Doped TiO2.

    Science.gov (United States)

    Wu, Yu-Hsien; Tseng, Po-Yuan; Hsieh, Ping-Yen; Chou, Hung-Tao; Tai, Nyan-Hwa

    2015-05-13

    Graphene with carbon atoms bonded in a honeycomb lattice can be tailored by doping various species to alter the electrical properties of the graphene for fabricating p-type or n-type field-effect transistors (FETs). In this study, large-area and single-layer graphene was grown on electropolished Cu foil using the thermal chemical vapor deposition method; the graphene was then transferred onto a poly(ethylene terephthalate) (PET) substrate to produce flexible, transparent FETs. TiO2 and nitrogen-doped TiO2 (N-TiO2) nanoparticles were doped on the graphene to alter its electrical properties, thereby enhancing the carrier mobility and enabling the transistors to sense UV and visible light optically. The results indicated that the electron mobility of the graphene was 1900 cm(2)/(V·s). Dopings of TiO2 and N-doped TiO2 (1.4 at. % N) lead to n-type doping effects demonstrating extremely high carrier mobilities of 53000 and 31000 cm(2)/(V·s), respectively. Through UV and visible light irradiation, TiO2 and N-TiO2 generated electrons and holes; the generated electrons transferred to graphene channels, causing the FETs to exhibit n-type electric behavior. In addition, the Dirac points of the graphene recovered to their original state within 5 min, confirming that the graphene-based FETs were photosensitive to UV and visible light. In a bending state with a radius of curvature greater than 2.0 cm, the carrier mobilities of the FETs did not substantially change, demonstrating the application possibility of the fabricated graphene-based FETs in photosensors.

  7. Tunnel field-effect transistor charge-trapping memory with steep subthreshold slope and large memory window

    Science.gov (United States)

    Kino, Hisashi; Fukushima, Takafumi; Tanaka, Tetsu

    2018-04-01

    Charge-trapping memory requires the increase of bit density per cell and a larger memory window for lower-power operation. A tunnel field-effect transistor (TFET) can achieve to increase the bit density per cell owing to its steep subthreshold slope. In addition, a TFET structure has an asymmetric structure, which is promising for achieving a larger memory window. A TFET with the N-type gate shows a higher electric field between the P-type source and the N-type gate edge than the conventional FET structure. This high electric field enables large amounts of charges to be injected into the charge storage layer. In this study, we fabricated silicon-oxide-nitride-oxide-semiconductor (SONOS) memory devices with the TFET structure and observed a steep subthreshold slope and a larger memory window.

  8. A study on III-nitride recessed-gate field-effect transistors using a remote-oxygen-plasma treatment

    International Nuclear Information System (INIS)

    Lee, Y-C; Kao, T-T; Shen, S-C

    2015-01-01

    We report a comparative study of the device performance of III-nitride (III-N) heterojunction field-effect transistors (HFETs) and metal-insulator-semiconductor field-effect transistors (MISFETs). The influence of a remote-oxygen-plasma treatment was investigated. The plasma-treated recessed-gate HFETs and MISFETs show normally-off characteristics with higher peak transconductance, lower sub-threshold slope, smaller hysteresis. An on-off ratio greater than 2.2E11 with a significant suppression of gate leakage can be achieved in plasma-treated III-N MISFETs. A drain current transient measurement was performed to analyze the traps in these devices and possible origins of these traps are studied. Six traps with characteristic time constants (τ) ranging from 180 s to 3 ms are identified in both HFETs and MISFETs, in addition to a trap which is associated with the ALD-grown gate dielectrics for the MISFETs. The results suggest that improved device performance in these plasma-treated III-N FETs is attributed to the reduced trap states with τ < 400 ms, which are located on III-N surfaces. The slower traps (τ > 2 s) cannot be reduced by the plasma treatment and are related to the oxygen and carbon impurities and the buffer traps in the bulk semiconductors. (paper)

  9. 3D modeling of dual-gate FinFET.

    Science.gov (United States)

    Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

    2012-11-13

    The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

  10. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.

    2011-10-12

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  11. All-(111) surface silicon nanowire field effect transistor devices: Effects of surface preparations

    NARCIS (Netherlands)

    Masood, M.N.; Carlen, Edwin; van den Berg, Albert

    2014-01-01

    Etching/hydrogen termination of All-(111) surface silicon nanowire field effect (SiNW-FET) devices developed by conventional photolithography and plane dependent wet etchings is studied with X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and

  12. CHEMICALLY MODIFIED FIELD-EFFECT TRANSISTORS - POTENTIOMETRIC AG+ SELECTIVITY OF PVC MEMBRANES BASED ON MACROCYCLIC THIOETHERS

    NARCIS (Netherlands)

    BRZOZKA, Z; COBBEN, PLHM; REINHOUDT, DN; EDEMA, JJH; KELLOGG, RM

    1993-01-01

    A chemically modified field-effect transistor (CHEMFET) with satisfactory Ag+ selectivity is described. The potentiometric Ag+ selectivities of CHEMFETs with plasticized PVC membranes based on macrocyclic thioethers have been determined. All the macrocyclic thioethers tested showed silver response

  13. Solution-processed ambipolar organic field-effect transistors and inverters

    NARCIS (Netherlands)

    Meijer, E.J.; Leeuw, D.M. de; Setayesh, S.; Veenendaal, E. van; Huisman, B.H.; Blom, P.W.M.; Hummelen, J.C.; Scherf, U.; Klapwijk, T.M.

    2003-01-01

    There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors. Monocrystalline silicon technology is largely based on complementary MOS (CMOS) structures that use both n-type and

  14. Fabrication of a vertical channel field effect transistor and a study of its electrical performances

    International Nuclear Information System (INIS)

    Bhuiyan, A.S.

    1983-01-01

    A vertical channel field effect transistor on silicon was fabricated by diffusion technique and its electrical characteristics were studied as a function of voltage and temperature. It was found that this transistor has relatively high breakdown voltage of 65 volts for drain source and of 7.5 volts for gate source terminals. (author)

  15. Micro pH Sensors and Biosensors Based on Electrochemical Field Effect Transistors

    Science.gov (United States)

    Sasano, Junji; Niwa, Daisuke; Osaka, Tetsuya

    A study on ion-sensing using field effect transistor (FET) was begun by Bergveld in the 1970s [1-3]. The ion-sensitive (IS) FET is now widely used as a miniaturized pH sensor, commercialized by some companies. First, the principle and structure of the ISFET are introduced in this section. A basic design of ISFET is shown in Fig. 10.1 a. ISFET has silicon substrate with field-effect structures such as electrolyte/IS layer/(insulator)/semiconductor structures; the space charge region in the semiconductor is modulated depending on the gate voltage (V g), same as a typical metal-oxide-semiconductor (MOS) FET. A typical bias V g versus drain-source current (I ds) characteristic of the device that has silicon nitride/silicon dioxide/silicon is shown in Fig. 10.1 b. This characteristic is quite similar to the MOSFET. A prominent difference between ISFET and MOSFET is that the gate voltage for the operation of the device is applied by an electrochemical reference electrode through the electrolyte in contact with the gate insulator. The threshold voltage (V th) could shift according to the value of the pH of the solution. In the MOSFET, the V th would shift depending on the change in the space charge region in the MOS capacitor structure by the application of V g. On the other hand, the V th in ISFET would shift according to the change in the surface potential in the electrolyte/IS layer interface. Therefore, the IS layers and their interfaces in ISFET play an important role in the performance of pH responsibility. It is well-known that the silicon nitride surface shows a good pH response in solution. The silicon nitride layer is often formed by plasma-enhanced chemical vapor deposition (PECVD), which is generally formed at the thickness of 100-500 nm. The V g vs. I ds, characteristics of the silicon nitride-based ISFET indicate a good pH responsibility of 58 mV/decade that shows Nernstian response (Fig. 10.1 c). The shift of the V th depends on the changes of surface

  16. Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor

    OpenAIRE

    Manjula Vijh; R.S. Gupta; Sujata Pandey

    2017-01-01

    Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor. This device, due to its varied advantages, is considered in applications where devices are scaled down to deep sub-micron level. Like MOSFETs, many geometries of TFETs have been studied and analyzed in the past few years. This work, presents a two dimensional analytical model for a III-V Heterojunction ...

  17. Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor

    OpenAIRE

    Saurabh, Sneh; Kumar, M. Jagadesh

    2011-01-01

    In this paper, we propose the application of a Dual Material Gate (DMG) in a Tunnel Field Effect Transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage, and also improve the average subthreshold slope, the nature of the output characteristics and the immunity against the DIBL effects. We demonstrate that if appropriate work-functions are chosen for the gate materials on the source side and the drain side, the tunnel field effect transistor shows...

  18. Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications

    Science.gov (United States)

    Du, Jiangfeng; Liu, Dong; Liu, Yong; Bai, Zhiyuan; Jiang, Zhiguang; Liu, Yang; Yu, Qi

    2017-11-01

    A high voltage GaN-based vertical field effect transistor with interfacial charge engineering (GaN ICE-VFET) is proposed and its breakdown mechanism is presented. This vertical FET features oxide trenches which show a fixed negative charge at the oxide/GaN interface. In the off-state, firstly, the trench oxide layer acts as a field plate; secondly, the n-GaN buffer layer is inverted along the oxide/GaN interface and thus a vertical hole layer is formed, which acts as a virtual p-pillar and laterally depletes the n-buffer pillar. Both of them modulate electric field distribution in the device and significantly increase the breakdown voltage (BV). Compared with a conventional GaN vertical FET, the BV of GaN ICE-VFET is increased from 1148 V to 4153 V with the same buffer thickness of 20 μm. Furthermore, the proposed device achieves a great improvement in the tradeoff between BV and on-resistance; and its figure of merit even exceeds the GaN one-dimensional limit.

  19. Effect of substrate and temperature on the electronic properties of monolayer molybdenum disulfide field-effect transistors

    Science.gov (United States)

    Yang, Qizhi; Fang, Jiajia; Zhang, Guangru; Wang, Quan

    2018-03-01

    The use of two-dimensional nanostructured molybdenum disulfide (MoS2) films in field-effect transistors (FETs) in place of graphene was investigated. Monolayer MoS2 films were fabricated by chemical vapor deposition. The output and transfer curves of supported and suspended MoS2 FETs were measured. The mobility of the suspended device reached 364.2 cm2 V-1 s-1 at 150 °C. The hysteresis of the supported device in transfer curves was much larger than that of the suspended device, and it increased at higher temperatures. These results indicate that the device mobility was limited by Coulomb scattering at ambient temperature, and surface/interface phonon scattering at 150 °C, and the injection of electrons, via quantum tunneling through the Schottky barrier at the contact, was enhanced at higher temperatures and led to the increase of the hysteresis. The suspended MoS2 films show potential for application as a channel material in electronic devices, and further understanding the causes of hysteresis in a material is important for its use in technologies, such as memory devices and sensing cells.

  20. Graphene quantum dot (GQD)-induced photovoltaic and photoelectric memory elements in a pentacene/GQD field effect transistor as a probe of functional interface

    Science.gov (United States)

    Kim, Youngjun; Cho, Seongeun; Kim, Hyeran; Seo, Soonjoo; Lee, Hyun Uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam

    2017-09-01

    Electric field-induced charge trapping and exciton dissociation were demonstrated at a penatcene/grapheme quantum dot (GQD) interface using a bottom contact bi-layer field effect transistor (FET) as an electrical nano-probe. Large threshold voltage shift in a pentacene/GQD FET in the dark arises from field-induced carrier trapping in the GQD layer or GQD-induced trap states at the pentacene/GQD interface. As the gate electric field increases, hysteresis characterized by the threshold voltage shift depending on the direction of the gate voltage scan becomes stronger due to carrier trapping associated with the presence of a GQD layer. Upon illumination, exciton dissociation and gate electric field-induced charge trapping simultaneously contribute to increase the threshold voltage window, which can potentially be exploited for photoelectric memory and/or photovoltaic devices through interface engineering.

  1. Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2015-07-21

    Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

  2. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.

    Science.gov (United States)

    Zhang, Kexiong; Sumiya, Masatomo; Liao, Meiyong; Koide, Yasuo; Sang, Liwen

    2016-03-29

    The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a drain-source current density of 0.51 mA/mm at the gate voltage of -2 V and drain bias of -15 V, an ON/OFF ratio of two orders of magnitude and effective hole mobility of 10 cm(2)/Vs at room temperature. The normal operation of MOSFET without freeze-out at 8 K further proves that the p-channel behavior is originated from the polarization-induced 2DHG.

  3. High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

    KAUST Repository

    Nikolka, Mark

    2016-12-12

    Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

  4. Ambipolar MoS2 Thin Flake Transistors

    NARCIS (Netherlands)

    Zhang, Yijin; Ye, Jianting; Matsuhashi, Yusuke; Iwasa, Yoshihiro

    Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS2, a

  5. Rapid detection of single E. coli bacteria using a graphene-based field-effect transistor device.

    Science.gov (United States)

    Thakur, Bhawana; Zhou, Guihua; Chang, Jingbo; Pu, Haihui; Jin, Bing; Sui, Xiaoyu; Yuan, Xiaochen; Yang, Ching-Hong; Magruder, Matthew; Chen, Junhong

    2018-07-01

    Contamination of surface and drinking water due to the presence of Escherichia coli bacteria is a major cause of water-borne disease outbreak. To address unmet challenges for practical pathogen detection in contaminated samples, we report fabrication of thermally reduced graphene oxide-based field-effect transistor (rGO FET) passivated with an ultrathin layer of Al 2 O 3 for real-time detection of E. coli bacteria. The sensor could detect a single E. coli cell within 50 s in a 1 µL sample volume. The ultrathin layer of Al 2 O 3 acted as a barrier between rGO and potential interferents present in the sample. E. coli specific antibodies anchored on gold nanoparticles acted as probes for selective capture of E. coli. The high density of negative charge on the surface of E. coli cells strongly modulates the concentration of majority charge carriers in the rGO monolayer, thereby allowing real-time monitoring of E. coli concentration in a given sample. With a low detection limit of single cell, the FET sensor had a linear range of 1-100 CFU in 1 µL volume of sample (i.e., 10 3 to 10 5 CFU/ mL). The biosensor with good selectivity and rapid detection was further successfully demonstrated for E. coli sensing in river water. The rGO-based FET sensor provides a low cost and label-free approach, and can be mass produced for detection of a broad spectrum of pathogens in water or other liquid media. Copyright © 2018 Elsevier B.V. All rights reserved.

  6. Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device.

    Science.gov (United States)

    Sanctis, Shawn; Hoffmann, Rudolf C; Eiben, Sabine; Schneider, Jörg J

    2015-01-01

    Tobacco mosaic virus (TMV) has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET). A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO) nanoparticles, employing a molecular precursor. Insightful studies of the decomposition of the precursor were done using NMR spectroscopy and material characterization of the hybrid material derived from the decomposition was achieved using dynamic light scattering (DLS), transmission electron microscopy (TEM), grazing incidence X-ray diffractometry (GI-XRD) and atomic force microscopy (AFM). TEM and DLS data confirm the formation of crystalline ZnO nanoparticles tethered on top of the virus template. GI-XRD investigations exhibit an orientated nature of the deposited ZnO film along the c-axis. FET devices fabricated using the zinc oxide mineralized virus template material demonstrates an operational transistor performance which was achieved without any high-temperature post-processing steps. Moreover, a further improvement in FET performance was observed by adjusting an optimal layer thickness of the deposited ZnO on top of the TMV. Such a bio-inorganic nanocomposite semiconductor material accessible using a mild and straightforward microwave processing technique could open up new future avenues within the field of bio-electronics.

  7. Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device

    Directory of Open Access Journals (Sweden)

    Shawn Sanctis

    2015-03-01

    Full Text Available Tobacco mosaic virus (TMV has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET. A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO nanoparticles, employing a molecular precursor. Insightful studies of the decomposition of the precursor were done using NMR spectroscopy and material characterization of the hybrid material derived from the decomposition was achieved using dynamic light scattering (DLS, transmission electron microscopy (TEM, grazing incidence X-ray diffractometry (GI-XRD and atomic force microscopy (AFM. TEM and DLS data confirm the formation of crystalline ZnO nanoparticles tethered on top of the virus template. GI-XRD investigations exhibit an orientated nature of the deposited ZnO film along the c-axis. FET devices fabricated using the zinc oxide mineralized virus template material demonstrates an operational transistor performance which was achieved without any high-temperature post-processing steps. Moreover, a further improvement in FET performance was observed by adjusting an optimal layer thickness of the deposited ZnO on top of the TMV. Such a bio-inorganic nanocomposite semiconductor material accessible using a mild and straightforward microwave processing technique could open up new future avenues within the field of bio-electronics.

  8. Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade.

    Science.gov (United States)

    Memisevic, Elvedin; Hellenbrand, Markus; Lind, Erik; Persson, Axel R; Sant, Saurabh; Schenk, Andreas; Svensson, Johannes; Wallenberg, Reine; Wernersson, Lars-Erik

    2017-07-12

    Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/In x Ga 1-x As y Sb 1-y /GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized using transmission electron microscopy with emphasis on the heterojunction. Using Technology Computer Aided Design (TCAD) simulations and Random Telegraph Signal (RTS) noise measurements, effects of different type of defects are studied. The study reveals that the bulk defects have the largest impact on the performance of these devices, although for these highly scaled devices interaction with even few oxide defects can have large impact on the performance. Understanding the contribution by individual defects, as outlined in this letter, is essential to verify the fundamental physics of device operation, and thus imperative for taking the III-V TunnelFETs to the next level.

  9. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  10. Light Scattering Studies of Organic Field Effect Transistors

    Science.gov (United States)

    Adil, Danish

    Organic semiconductors hold a great promise of enabling new technology based on low cost and flexible electronic devices. While much work has been done in the field of organic semiconductors, the field is still quite immature when compared to that of traditional inorganic based devices. More work is required before the full potential of organic field effect transistors (OFETs), organic light emitting diodes (OLEDs), and organic photovoltaics (OPVs) is realized. Among such work, a further development of diagnostic tools that characterize charge transport and device robustness more efficiently is required. Charge transport in organic semiconductors is limited by the nature of the metal-semiconductor interfaces where charge is injected into the semiconductor film and the semiconductor-dielectric interface where the charge is accumulated and transported. This, combined with that fact that organic semiconductors are especially susceptible to having structural defects induced via oxidation, charge transport induced damage, and metallization results in a situation where a semiconductor film's ability to conduct charge can degrade over time. This degradation manifests itself in the electrical device characteristics of organic based electronic devices. OFETs, for example, may display changes in threshold voltage, lowering of charge carrier mobilities, or a decrease in the On/Off ratio. All these effects sum together to result in degradation in device performance. The work begins with a study where matrix assisted pulsed laser deposition (MAPLE), an alternative organic semiconductor thin film deposition method, is used to fabricate OFETs with improved semiconductor-dielectric interfaces. MAPLE allows for the controlled layer-by-layer growth of the semiconductor film. Devices fabricated using this technique are shown to exhibit desirable characteristics that are otherwise only achievable with additional surface treatments. MAPLE is shown to be viable alternative to other

  11. Detailed investigation of the conducting channel in poly(3-hexylthiophene) field effect transistors

    NARCIS (Netherlands)

    von Hauff, Elizabeth; Johnen, Fabian; Tunc, Ali Veysel; Govor, Leonid; Parisi, Juergen

    2010-01-01

    In this study, the conducting channel in poly(3-hexylthiophene) (P3HT) organic field effect transistors (OFETs) was investigated. The effect of varying the P3HT layer thickness on the OFET parameters was studied. The threshold voltage and the field effect mobility were determined from both the

  12. Investigation of Electronic and Opto-Electronic Properties of Two-Dimensional (2D) Layers of Copper Indium Selenide Field Effect Transistors

    Science.gov (United States)

    Patil, Prasanna Dnyaneshwar

    Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide (CuIn7Se11) are reported. In general, field effect transistors (FETs), electric double layer field effect transistors (EDL-FETs), and photodetectors are crucial part of several electronics based applications such as tele-communication, bio-sensing, and opto-electronic industry. After the discovery of graphene, several 2D semiconductor materials like TMDs (MoS2, WS2, and MoSe2 etc.), group III-VI materials (InSe, GaSe, and SnS2 etc.) are being studied rigorously in order to develop them as components in next generation FETs. Traditionally, thin films of ternary system of Copper Indium Selenide have been extensively studied and used in optoelectronics industry as photoactive component in solar cells. Thus, it is expected that atomically thin 2D layered structure of Copper Indium Selenide can have optical properties that could potentially be more advantageous than its thin film counterpart and could find use for developing next generation nano devices with utility in opto/nano electronics. Field effect transistors were fabricated using few-layers of CuIn7Se11 flakes, which were mechanically exfoliated from bulk crystals grown using chemical vapor transport technique. Our FET transport characterization measurements indicate n-type behavior with electron field effect mobility microFE ≈ 36 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. We found that in such back gated field effect transistor an on/off ratio of 104 and a subthreshold swing ≈ 1 V/dec can be obtained. Our investigations further indicate that Electronic performance of these materials can be increased significantly when gated from top using an ionic liquid electrolyte [1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)]. We found that electron field effect mobility microFE can be increased from

  13. On-chip electrical detection of parallel loop-mediated isothermal amplification with DG-BioFETs for the detection of foodborne bacterial pathogens

    Science.gov (United States)

    The use of field effect transistors (FETs) as the transduction element for the detection of DNA amplification reactions will enable portable and inexpensive nucleic acid analysis. Transistors used as biological sensors,or BioFETs, minimize the cost and size of detection platforms by leveraging fabri...

  14. A High-Performance Top-Gated Graphene Field-Effect Transistor with Excellent Flexibility Enabled by an iCVD Copolymer Gate Dielectric.

    Science.gov (United States)

    Oh, Joong Gun; Pak, Kwanyong; Kim, Choong Sun; Bong, Jae Hoon; Hwang, Wan Sik; Im, Sung Gap; Cho, Byung Jin

    2018-03-01

    A high-performance top-gated graphene field-effect transistor (FET) with excellent mechanical flexibility is demonstrated by implementing a surface-energy-engineered copolymer gate dielectric via a solvent-free process called initiated chemical vapor deposition. The ultrathin, flexible copolymer dielectric is synthesized from two monomers composed of 1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane and 1-vinylimidazole (VIDZ). The copolymer dielectric enables the graphene device to exhibit excellent dielectric performance and substantially enhanced mechanical flexibility. The p-doping level of the graphene can be tuned by varying the polar VIDZ fraction in the copolymer dielectric, and the Dirac voltage (V Dirac ) of the graphene FET can thus be systematically controlled. In particular, the V Dirac approaches neutrality with higher VIDZ concentrations in the copolymer dielectric, which minimizes the carrier scattering and thereby improves the charge transport of the graphene device. As a result, the graphene FET with 20 nm thick copolymer dielectrics exhibits field-effect hole and electron mobility values of over 7200 and 3800 cm 2 V -1 s -1 , respectively, at room temperature. These electrical characteristics remain unchanged even at the 1 mm bending radius, corresponding to a tensile strain of 1.28%. The formed gate stack with the copolymer gate dielectric is further investigated for high-frequency flexible device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Unraveling the mechanism of ultraviolet-induced optical gating in Zn1-x Mg x O nanocrystal solid solution field effect transistors

    Science.gov (United States)

    Kim, Youngjun; Cho, Seongeun; Park, Byoungnam

    2018-03-01

    We report ultraviolet (UV)-induced optical gating in a Zn1-x Mg x O nanocrystal solid solution (NCSS) field effect transistor (FET) through a systematic study in which UV-induced charge transport properties are probed as a function of Mg composition. Change in the electrical properties of Zn1-x Mg x O NCSS associated with electronic traps is investigated by field effect-modulated current-voltage characteristic curves in the dark and under illumination. Under UV illumination, significant threshold voltage shift to a more negative value in an n-channel Zn1-x Mg x O NCSS FET is observed. Importantly, as the Mg composition increases, the effect of UV illumination on the threshold voltage shift is alleviated. We found that threshold voltage shift as a function of Mg composition in the dark and under illumination is due to difference in the deep trap density in the Zn1-x Mg x O NCSS. This is supported by Mg composition dependent photoluminescence intensity in the visible range and reduced FET mobility with Mg addition. The presence of the deep traps and the corresponding trap energy levels in the Zn1-x Mg x O NCSS are ensured by photoelectron spectroscopy in air.

  16. Practical guide to organic field effect transistor circuit design

    CERN Document Server

    Sou, Antony

    2016-01-01

    The field of organic electronics spans a very wide range of disciplines from physics and chemistry to hardware and software engineering. This makes the field of organic circuit design a daunting prospect full of intimidating complexities, yet to be exploited to its true potential. Small focussed research groups also find it difficult to move beyond their usual boundaries and create systems-on-foil that are comparable with the established silicon world.This book has been written to address these issues, intended for two main audiences; firstly, physics or materials researchers who have thus far designed circuits using only basic drawing software; and secondly, experienced silicon CMOS VLSI design engineers who are already knowledgeable in the design of full custom transistor level circuits but are not familiar with organic devices or thin film transistor (TFT) devices.In guiding the reader through the disparate and broad subject matters, a concise text has been written covering the physics and chemistry of the...

  17. Bipolar single-wall carbon nanotube field-effect transistor

    OpenAIRE

    Babic, Bakir; Iqbal, Mahdi; Schonenberger, Christian

    2002-01-01

    We use a simultaneous flow of ethylene and hydrogen gases to grow single wall carbon nanotubes by chemical vapor deposition. Strong coupling to the gate is inferred from transport measurements for both metallic and semiconducting tubes. At low-temperatures, our samples act as single-electron transistors where the transport mechanism is mainly governed by Coulomb blockade. The measurements reveal very rich quantized energy level spectra spanning from valence to conduction band. The Coulomb dia...

  18. Non-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing

    KAUST Repository

    Rojas, Jhonathan Prieto

    2015-05-01

    The ability to incorporate rigid but high-performance nano-scale non-planar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in-situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nano-scale, non-planar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stack, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 μm gate length exhibits ION ~70 μA/μm (VDS = 2 V, VGS = 2 V) and a low sub-threshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device’s performance with insignificant deterioration even at a high bending state.

  19. Characterization of field effect transistor with TiO{sub 2} nanotube channel fabricated by dielectrophoresis

    Energy Technology Data Exchange (ETDEWEB)

    Ishii, M; Yoshimura, T; Fujimura, N [Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka (Japan); Terauchi, M; Nakayama, T, E-mail: tyoshi@pe.osakafu-u.ac.jp [Extreme Energy-Density Research Institute, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka, Niigata (Japan)

    2011-10-29

    Field effect transistor with TiO{sub 2} nanotube channel was fabricated by dielectrophoresis. Although TiO{sub 2} nanotube channel is not formed at 10 MHz of the dielectrophoresis, the channel is formed at 100 kHz. It is suggested that migration distance is not enough at 10MHz. The drain current-drain voltage characteristics of the transistor and the temperature dependence indicate that the electric transport is dominated by double Schottky barrier.

  20. Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor

    OpenAIRE

    Glebov, A. A.; Katkov, V. L.; Osipov, V. A.

    2017-01-01

    The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are performed by using the Green's function method and the tight-binding approximation. It is shown that the transistor performance depends critically on two important factors associated with the defects: the destruction of the edge-localized electronic states and the ...

  1. Tuning the threshold voltage in electrolyte-gated organic field-effect transistors

    Science.gov (United States)

    Kergoat, Loïg; Herlogsson, Lars; Piro, Benoit; Pham, Minh Chau; Horowitz, Gilles; Crispin, Xavier; Berggren, Magnus

    2012-01-01

    Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals. The influence of the work function of the metal is investigated in metal-electrolyte-organic semiconductor diodes and electrolyte-gated OFETs. A good correlation is found between the flat-band potential and the threshold voltage. The possibility to tune the threshold voltage over half the potential range applied and to obtain depletion-like (positive threshold voltage) and enhancement (negative threshold voltage) transistors is of great interest when integrating these transistors in logic circuits. The combination of a depletion-like and enhancement transistor leads to a clear improvement of the noise margins in depleted-load unipolar inverters. PMID:22586088

  2. Highly stable organic polymer field-effect transistor sensor for selective detection in the marine environment

    Science.gov (United States)

    Knopfmacher, Oren; Hammock, Mallory L.; Appleton, Anthony L.; Schwartz, Gregor; Mei, Jianguo; Lei, Ting; Pei, Jian; Bao, Zhenan

    2014-01-01

    In recent decades, the susceptibility to degradation in both ambient and aqueous environments has prevented organic electronics from gaining rapid traction for sensing applications. Here we report an organic field-effect transistor sensor that overcomes this barrier using a solution-processable isoindigo-based polymer semiconductor. More importantly, these organic field-effect transistor sensors are stable in both freshwater and seawater environments over extended periods of time. The organic field-effect transistor sensors are further capable of selectively sensing heavy-metal ions in seawater. This discovery has potential for inexpensive, ink-jet printed, and large-scale environmental monitoring devices that can be deployed in areas once thought of as beyond the scope of organic materials.

  3. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  4. Enhanced transconductance in a double-gate graphene field-effect transistor

    Science.gov (United States)

    Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

    2018-03-01

    Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

  5. Multi-functional integration of organic field-effect transistors (OFETs): advances and perspectives.

    Science.gov (United States)

    Di, Chong-an; Zhang, Fengjiao; Zhu, Daoben

    2013-01-18

    Multi-functional organic field-effect transistors (OFETs), an emerging focus of organic optoelectronic devices, hold great potential for a variety of applications. This report introduces recent progress on multi-functional OFETs including OFETs based sensors, phototransistors, light-emitting transistors, memory cells, and magnetic field-effect OFETs. Key strategies towards multi- functional integration of OFETs, which involves the exploration of functional materials, interfaces modifications, modulation of condensed structures, optimization of device geometry, and device integration, are summarized. Furthermore, remaining challenges and perspectives are discussed, giving a comprehensive overview of multi-functional OFETs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  7. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    International Nuclear Information System (INIS)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-01-01

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  8. Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor

    Science.gov (United States)

    Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

    2017-11-01

    To reduce the thermal budget and the short channel effects in state of the art CMOS technology, Junctionless field effect transistor (JLFET) has been proposed in the literature. Numerous experimental, modeling, and simulation based works have been done on this new FET with bulk materials for various geometries until now. On the other hand, the two-dimensional layered material is considered as an alternative to current Si technology because of its ultra-thin body and high mobility. Very recently few simulation based works have been done on monolayer molybdenum disulfide based JLFET mainly to show the advantage of JLFET over conventional FET. However, no comprehensive simulation-based work has been done for double gate JLFET keeping in mind the prominent transition metal dichalcogenides (TMDC) to the authors' best knowledge. In this work, we have studied quantum ballistic drain current-gate voltage characteristics of such FETs within non-equilibrium Green's function (NEGF) framework. Our simulation results reveal that all these TMDC materials are viable options for implementing state of the art Junctionless MOSFET with emphasis on their performance at short gate lengths. Besides evaluating the prospect of TMDC materials in the digital logic application, the performance of Junctionless Double Gate trilayer TMDC heterostructure FET for the label-free electrical detection of biomolecules in dry environment has been investigated for the first time to the authors' best knowledge. The impact of charge neutral biomolecules on the electrical characteristics of the biosensor has been analyzed under dry environment situation. Our study shows that these materials could provide high sensitivity in the sub-threshold region as a channel material in nano-biosensor, a trend demonstrated by silicon on insulator FET sensor in the literature. Thus, going by the trend of replacing silicon with these novel materials in device level, TMDC heterostructure could be a viable alternative to

  9. Development and characterization of vertical double-gate MOS field-effect transistors

    International Nuclear Information System (INIS)

    Trellenkamp, S.

    2004-07-01

    Planar MOS-field-effect transistors are common devices today used by the computer industry. When their miniaturization reaches its limit, alternate transistor concepts become necessary. In this thesis the development of vertical Double-Gate-MOS-field-effect transistors is presented. These types of transistors have a vertically aligned p-n-p junction (or n-p-n junction, respectively). Consequently, the source-drain current flows perpendicular with respect to the surface of the wafer. A Double-Gate-field-effect transistor is characterized by a very thin channel region framed by two parallel gates. Due to the symmetry of the structure and less bulk volume better gate control and hence better short channel behavior is expected, as well as an improved scaling potential. Nanostructuring of the transistor's active region is very challenging. Approximately 300 nm high and down to 30 nm wide silicon ridges are requisite. They can be realized using hydrogen silsesquioxane (HSQ) as inorganic high resolution resist for electron beam lithography. Structures defined in HSQ are then transferred with high anisotropy and selectivity into silicon using ICP-RIE (reactive ion etching with inductive coupled plasma). 25 nm wide and 330 nm high silicon ridges are achieved. Different transistor layouts are realized. The channel length is defined by epitaxial growth of doped silicon layers before or by ion implantation after nanostructuring, respectively. The transistors show source-drain currents up to 380 μA/μm and transconductances up to 480 μS/μm. Improved short channel behavior for decreasing width of the silicon ridges is demonstrated. (orig.)

  10. Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yuchen Du

    2014-09-01

    Full Text Available Layered two-dimensional (2D semiconducting transition metal dichalcogenides (TMDs have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are identified as the potential candidates as channel materials for future thin film technology due to their high mobility and the exhibiting bandgaps. While many TMD filed-effect transistors (FETs have been widely demonstrated along with a significant progress to clearly understand the device physics, large contact resistance at metal/semiconductor interface still remain a challenge. From 2D device research point of view, how to minimize the Schottky barrier effects on contacts thus reduce the contact resistance of metals on 2D materials is very critical for the further development of the field. Here, we present a review of contact research on molybdenum disulfide and other TMD FETs from the fundamental understanding of metal-semiconductor interfaces on 2D materials. A clear contact research strategy on 2D semiconducting materials is developed for future high-performance 2D FETs with aggressively scaled dimensions.

  11. Negative Differential Transconductance in a MoS2 /WSe2 Heterojunction Field Effect Transistor

    Science.gov (United States)

    Zubair, Ahmad; Nourbakhsh, Amirhasan; Dresselhaus, Mildred; de Gendt, Stefan; Palacios, Tomas

    2015-03-01

    In this work, we demonstrate the negative transconductance in heterojunction transistors made of two-dimensional materials for the first time. Negative transconductance plays a key role in multi-valued logic/memory and frequency multiplication circuits. The simpler fabrication method of stacked van der Waals heterostructures compared to the conventional bulk semiconductors and large area CVD growth of the layered 2D materials systems makes it a prime candidate for scalable novel applications of their heterostructures. Vertically stacked MoS2/WSe2 heterostructures are fabricated by mechanical exfoliation and an in-house dry transfer process. A two-step process of e-beam lithography and metal deposition (Au on MoS2, and Pd on WSe2) were performed to fabricate n-type MoS2 and ambipolar WSe2 FET. The transfer characteristics on the non-overlapping regions shows the expected characteristics of the n-type, MoS2 FET and ambipolar WSe2 FET. At the same time, the transfer characteristics of the overlapping region between MoS2 and WSe2 show negative differential transconductance. With proper scaling and careful optimization this negative differential transconductance will lead to novel applications.

  12. A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

    Science.gov (United States)

    Cho, Ah-Jin; Park, Kee Chan; Kwon, Jang-Yeon

    2015-01-01

    For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

  13. Solution-processed ambipolar organic field-effect transistors and inverters.

    Science.gov (United States)

    Meijer, E J; de Leeuw, D M; Setayesh, S; van Veenendaal, E; Huisman, B H; Blom, P W M; Hummelen, J C; Scherf, U; Kadam, J; Klapwijk, T M

    2003-10-01

    There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors. Monocrystalline silicon technology is largely based on complementary MOS (CMOS) structures that use both n-type and p-type transistor channels. This complementary technology has enabled the construction of digital circuits, which operate with a high robustness, low power dissipation and a good noise margin. For the design of efficient organic integrated circuits, there is an urgent need for complementary technology, where both n-type and p-type transistor operation is realized in a single layer, while maintaining the attractiveness of easy solution processing. We demonstrate, by using solution-processed field-effect transistors, that hole transport and electron transport are both generic properties of organic semiconductors. This ambipolar transport is observed in polymers based on interpenetrating networks as well as in narrow bandgap organic semiconductors. We combine the organic ambipolar transistors into functional CMOS-like inverters.

  14. Reduction of ambipolar characteristics of vertical channel tunneling field-effect transistor by using dielectric sidewall

    International Nuclear Information System (INIS)

    Park, Chun Woong; Cho, Il Hwan; Choi, Woo Young; Lee, Jong-Ho

    2013-01-01

    Ambipolar characteristics of tunneling FETs have been improved by introducing a novel structure which contains dielectric sidewall in the gate region. In the ambipolar operation mode, gate field effect on intrinsic-drain junction region can be reduced with dielectric sidewall. As a result, ambipolar state tunneling probability is decreased at the intrinsic-drain junction. Since the sidewall region is located near the drain region, tunneling probability of source-intrinsic region is not affected by dielectric sidewall. This asymmetric characteristics means only ambipolar current of tunneling FETs can be prohibited by dielectric sidewall. Reduction of ambipolar characteristic of proposed structure has been evaluated with dimension and location of dielectric sidewall. Quantitative analysis of ambipolar characteristics is also investigated with tunneling. (paper)

  15. Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2018-01-01

    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

  16. Change in Electronic States in the Accumulation Layer at Interfaces in a Poly(3-hexylthiophene) Field-Effect Transistor and the Impact of Encapsulation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Byoungnam; Kim, Yongjin; Graham, Samuel; Reichmanis, Elsa

    2011-09-28

    The electrical properties of organic field-effect transistors (OFETs) are largely determined by the accumulation layer that extends only a few molecular layers away from the gate dielectric/organic semiconductor interface. To understand degradation processes that occur within the device structure under ambient conditions, it is thus essential to probe the interface using an architecture that minimizes the effects of bulk transport of contaminating species through upper layers of material in a thick film device. Using FETs designed with multiple voltage probes along the conducting channel and an ultrathin film of the active material, we found that the charge carrier density and the FET mobility decrease, and further, the contact and channel properties are strongly correlated. FET devices prepared with an ultrathin film of P3HT become significantly contact limited in air due to a hole diffusion barrier near the drain electrode. Encapsulation of the device with a layered organic/inorganic barrier material consisting of parylene and Al₂O₃ appreciably retarded diffusion of molecular species from ambient air into P3HT.

  17. Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons.

    Science.gov (United States)

    Chang, Ye; Hui, Zhipeng; Wang, Xiayu; Qu, Hemi; Pang, Wei; Duan, Xuexin

    2018-01-25

    In this paper, we develop a novel dual-mode gas sensor system which comprises a silicon nanoribbon field effect transistor (Si-NR FET) and a film bulk acoustic resonator (FBAR). We investigate their sensing characteristics using polar and nonpolar organic compounds, and demonstrate that polarity has a significant effect on the response of the Si-NR FET sensor, and only a minor effect on the FBAR sensor. In this dual-mode system, qualitative discrimination can be achieved by analyzing polarity with the Si-NR FET and quantitative concentration information can be obtained using a polymer-coated FBAR with a detection limit at the ppm level. The complementary performance of the sensing elements provides higher analytical efficiency. Additionally, a dual mixture of two types of freons (CFC-113 and HCFC-141b) is further analyzed with the dual-mode gas sensor. Owing to the small size and complementary metal-oxide semiconductor (CMOS)-compatibility of the system, the dual-mode gas sensor shows potential as a portable integrated sensing system for the analysis of gas mixtures in the future.

  18. Nonenzymatic flexible field-effect transistor based glucose sensor fabricated using NiO quantum dots modified ZnO nanorods.

    Science.gov (United States)

    Jung, Da-Un-Jin; Ahmad, Rafiq; Hahn, Yoon-Bong

    2018-02-15

    Herein, we fabricated nonenzymatic flexible field-effect transistor (f-FET) based glucose sensor using nickel oxide quantum dots (NiO QDs) modified zinc oxide nanorods (ZnO NRs). The ZnO NRs surfaces were coated with NiO QDs using radio frequency (RF) magnetron sputtering to enhance the electrocatalytic feature and the surface area of ZnO NRs. Under physiological conditions (pH 7.4), the nonenzymatic f-FET glucose sensor shows two linear ranges of 0.001-10mM and 10-50mM with the high sensitivity of 13.14μAcm -2 mM -1 and 7.31μAcm -2 mM -1 , respectively, along with good selectivity, stability and repeatability during glucose detection. The examination of human whole blood and serum samples reveal that the nonenzymatic f-FET based glucose sensor is capable of measuring glucose concentration efficiently in the presence of interfering species and thus can be offered as a promising device for further applications in clinical and non-clinical fields. Copyright © 2017 Elsevier Inc. All rights reserved.

  19. Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons

    Directory of Open Access Journals (Sweden)

    Ye Chang

    2018-01-01

    Full Text Available In this paper, we develop a novel dual-mode gas sensor system which comprises a silicon nanoribbon field effect transistor (Si-NR FET and a film bulk acoustic resonator (FBAR. We investigate their sensing characteristics using polar and nonpolar organic compounds, and demonstrate that polarity has a significant effect on the response of the Si-NR FET sensor, and only a minor effect on the FBAR sensor. In this dual-mode system, qualitative discrimination can be achieved by analyzing polarity with the Si-NR FET and quantitative concentration information can be obtained using a polymer-coated FBAR with a detection limit at the ppm level. The complementary performance of the sensing elements provides higher analytical efficiency. Additionally, a dual mixture of two types of freons (CFC-113 and HCFC-141b is further analyzed with the dual-mode gas sensor. Owing to the small size and complementary metal-oxide semiconductor (CMOS-compatibility of the system, the dual-mode gas sensor shows potential as a portable integrated sensing system for the analysis of gas mixtures in the future.

  20. Real-time detection of mercury ions in water using a reduced graphene oxide/DNA field-effect transistor with assistance of a passivation layer

    Directory of Open Access Journals (Sweden)

    Jingbo Chang

    2015-09-01

    Full Text Available Field-effect transistor (FET sensors based on reduced graphene oxide (rGO for detecting chemical species provide a number of distinct advantages, such as ultra-sensitivity, label-free, and real-time response. However, without a passivation layer, channel materials directly exposed to an ionic solution could generate multiple signals from ionic conduction through the solution droplet, doping effect, and gating effect. Therefore, a method that provides a passivation layer on the surface of rGO without degrading device performance will significantly improve device sensitivity, in which the conductivity changes solely with the gating effect. In this work, we report rGO FET sensor devices with Hg2+-dependent DNA as a probe and the use of an Al2O3 layer to separate analytes from conducting channel materials. The device shows good electronic stability, excellent lower detection limit (1 nM, and high sensitivity for real-time detection of Hg2+ in an underwater environment. Our work shows that optimization of an rGO FET structure can provide significant performance enhancement and profound fundamental understanding for the sensor mechanism.

  1. Hysteresis in single-layer MoS2 field effect transistors.

    Science.gov (United States)

    Late, Dattatray J; Liu, Bin; Matte, H S S Ramakrishna; Dravid, Vinayak P; Rao, C N R

    2012-06-26

    Field effect transistors using ultrathin molybdenum disulfide (MoS(2)) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS(2) devices measured under ambient environment. Here, we report the origin of their hysteretic and transient behaviors and suggest that hysteresis of MoS(2) field effect transistors is largely due to absorption of moisture on the surface and intensified by high photosensitivity of MoS(2). Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.

  2. Device characteristics of polymer dual-gate field-effect transistors

    NARCIS (Netherlands)

    Maddalena, F.; Spijkman, M.; Brondijk, J. J.; Fonteijn, P.; Brouwer, F.; Hummelen, J. C.; de Leeuw, D. M.; Blom, P. W. M.; de Boer, B.

    2008-01-01

    Dual-gate organic field-effect transistors (OFETs) were fabricated by solution processing using different p-type polymer semiconductors and polymer top-dielectric materials on prefabricated substrates with gold source-drain contacts defined by photolithography. The semiconductors and top dielectrics

  3. Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors

    NARCIS (Netherlands)

    De Boer, R.W.I.; Stassen, A.F.; Craciun, M.F.; Mulder, C.L.; Molinari, A.; Rogge, S.; Morpurgo, A.F.

    2005-01-01

    We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper- and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches

  4. Charge transport in dual-gate organic field-effect transistors

    NARCIS (Netherlands)

    Brondijk, J.J.; Spijkman, M.; Torricelli, F.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The charge carrier distribution in dual-gate field-effect transistors is investigated as a function of semiconductor thickness. A good agreement with 2-dimensional numerically calculated transfer curves is obtained. For semiconductor thicknesses larger than the accumulation width, two spatially

  5. Thiadiazoloquinoxaline-Fused Naphthalenediimides for n-Type Organic Field-Effect Transistors (OFETs).

    Science.gov (United States)

    Hu, Ben-Lin; Zhang, Ke; An, Cunbin; Pisula, Wojciech; Baumgarten, Martin

    2017-12-01

    Thiadiazoloquinoxaline-fused naphthalenediimides (TQ-f-NDIs) are designed and synthesized. They show high electron affinities (EAs) of ∼4.5 eV. Organic field-effect transistor (OFET) devices, fabricated by dip-coating, provided maximum high electron mobilities of 0.03 cm 2 /(V·s) with an on/off ratio of 2 × 10 5 .

  6. Gate-bias assisted charge injection in organic field-effect transistors

    NARCIS (Netherlands)

    Brondijk, J. J.; Torricelli, F.; Smits, E. C. P.; Blom, P. W. M.; de Leeuw, D. M.

    The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively, we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact, although the

  7. N-type self-assembled monolayer field-effect transistors

    NARCIS (Netherlands)

    Ringk, A.; Li, X.; Gholamrezaie, F.; Smits, E.C.P.; Neuhold, A.; Moser, A.; Gelinck, G.H.; Resel, R.; Leeuw, D.M. de; Strohriegl, P.

    2012-01-01

    Within this work we present the synthesis and applications of a novel material designed for n-type self-assembled monolayer field-effect transistors (SAMFETs). Our novel perylene bisimide based molecule was obtained in six steps and is functionalized with a phosphonic acid linker which enables a

  8. Ambipolar organic field-effect transistors based on a solution-processed methanofullerene

    NARCIS (Netherlands)

    Anthopoulos, Thomas D.; Tanase, Cristina; Setayesh, Sepas; Meijer, Eduard J.; Hummelen, Jan C.; Blom, Paul W.M.; de Leeuw, Dagobert

    2004-01-01

    Organic field-effect transistors (OFETs, see Figure), based on the solution-processible methanofullerene [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM), have been fabricated in a bottom-contact device configuration using gold electrodes. The OFET functions either as a p- or n-channel device,

  9. Near-Infrared Light-Emitting Ambipolar Organic Field-Effect Transistors

    NARCIS (Netherlands)

    Smits, E.C.P.; Setayesh, S.; Anthopoulos, T.D.; Buechel, M.; Nijssen, W.; Coehoorn, R.; Blom, P.W.M.; Leeuw, D.M. de

    2006-01-01

    Recent years have seen tremendous advances in the area of organic-based optoelectronic devices and several applications previously envisioned are now reaching the stage of commercial exploitation.[1] Organic field-effect transistors (OFETs) are among these devices and can be arguably viewed as a

  10. Gate-bias assisted charge injection in organic field-effect transistors

    NARCIS (Netherlands)

    Brondijk, J.J.; Torricelli, F.; Smits, E.C.P.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively, we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact, although the

  11. The ion-sensitive field effect transistor in rapid acid-base titrations

    NARCIS (Netherlands)

    Bos, M.; Bergveld, Piet; van Veen-Blaauw, A.M.W.

    1979-01-01

    Ion-sensitive field effect transistors (ISFETs) are used as the pH sensor in rapid acid—base titrations. Titration speeds at least five times greater than those with glass electrodes are possible for accuracies better than ±1%.

  12. Intrinsic hydrogen-terminated diamond as ion-sensitive field effect transistor

    Czech Academy of Sciences Publication Activity Database

    Rezek, Bohuslav; Shin, D.; Watanabe, H.; Nebel, C.E.

    2007-01-01

    Roč. 122, - (2007), s. 596-599 ISSN 0925-4005 Institutional research plan: CEZ:AV0Z10100521 Keywords : diamond film * surface electronic properties * field effect transistor * pH sensor * semiconductor-electrolyte interface Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.934, year: 2007

  13. Microstructure-mobility correlation in self-organised, conjugated polymer field-effect transistors

    DEFF Research Database (Denmark)

    Sirringhaus, H.; Brown, P.J.; Friend, R.H.

    2000-01-01

    We have investigated the correlation between polymer microstructure and charge carrier mobility in high-mobility, self-organised field-effect transistors of poly-3-hexyl-thiophene (P3HT). Two different preferential orientations of the microcrystalline P3HT domains with respect to the substrate have...

  14. Proton migration mechanism for operational instabilities in organic field-effect transistors

    NARCIS (Netherlands)

    Sharma, A.; Mathijssen, S.G.J.; Smits, E.C.P.; Kemerink, M.; Leeuw, D.M. de; Bobbert, P.A.

    2010-01-01

    Organic field-effect transistors exhibit operational instabilities involving a shift of the threshold gate voltage when a gate bias is applied. For a constant gate bias the threshold voltage shifts toward the applied gate bias voltage, an effect known as the bias-stress effect. Here, we report on a

  15. Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders

    International Nuclear Information System (INIS)

    Radeka, V.; Rescia, S.; Rehn, L.A.; Manfredi, P.F.; Speziali, V.

    1991-11-01

    The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described

  16. The Influence of Morphology on High-Performance Polymer Field-Effect Transistors

    DEFF Research Database (Denmark)

    Tsao, Hoi Nok; Cho, Don; Andreasen, Jens Wenzel

    2009-01-01

    The influence of molecular packing on the performance of polymer organic field-effect transistors is illustrated in this work. Both close -stacking distance and long-range order are important for achieving high mobilities. By aligning the polymers from solution, long-range order is induced...

  17. Organic nanofibers integrated by transfer technique in field-effect transistor devices

    DEFF Research Database (Denmark)

    Tavares, Luciana; Kjelstrup-Hansen, Jakob; Thilsing-Hansen, Kasper

    2011-01-01

    The electrical properties of self-assembled organic crystalline nanofibers are studied by integrating these on field-effect transistor platforms using both top and bottom contact configurations. In the staggered geometries, where the nanofibers are sandwiched between the gate and the source-drain...

  18. Graphene electrodes for n-type organic field-effect transistors

    DEFF Research Database (Denmark)

    Henrichsen, Henrik Hartmann; Boggild, P.

    2010-01-01

    field-effect transistor configuration (OFET). Single tip tungsten as well as microscale multi-point probes were used to electrically contact individual devices, making permanent connections unnecessary. The device platform has been tested with a thin film of para-hexaphenylene (p6P...

  19. High Performance Ambipolar Field-Effect Transistor of Random Network Carbon Nanotubes

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Gao, Jia; Derenskyi, Vladimir; Gomulya, Widianta; Iezhokin, Igor; Gordiichuk, Pavlo; Herrmann, Andreas; Loi, Maria Antonietta

    2012-01-01

    Ambipolar field-effect transistors of random network carbon nanotubes are fabricated from an enriched dispersion utilizing a conjugated polymer as the selective purifying medium. The devices exhibit high mobility values for both holes and electrons (3 cm(2)/V.s) with a high on/off ratio (10(6)). The

  20. Gas sensing with self-assembled monolayer field-effect transistors

    NARCIS (Netherlands)

    Andringa, Anne-Marije; Spijkman, Mark-Jan; Smits, Edsger C. P.; Mathijssen, Simon G. J.; van Hal, Paul A.; Setayesh, Sepas; Willard, Nico P.; Borshchev, Oleg V.; Ponomarenko, Sergei A.; Blom, Paul W. M.; de Leeuw, Dago M.

    A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for

  1. Reproducibility and stability of C60 based organic field effect transistor

    Science.gov (United States)

    Ahmed, Rizwan; Sams, Michael; Simbrunner, Clemens; Ullah, Mujeeb; Rehman, Kamila; Schwabegger, Günther; Sitter, H.; Ostermann, Timm

    2012-01-01

    A comprehensive study concerning the reproducibility and stability of organic n-type field effect transistors is presented. C60 based OFETs were chosen to investigate the fabrication reproducibility and the long term stability because C60 is a high mobility n-type material. We fabricated 48 transistors and each transistor was measured for 24 h inside the glove box. To test for life time stability – long term measurements up to three months have been undertaken. We report about the fluctuations in the device parameters of all investigated transistors by comparing the transfer characteristics, and on/off ratio for short time and long time measurements. C60 based OFETs showed good reproducibility and stability for short time measurements and a decay for long time measurements. PMID:22368321

  2. Sub-threshold-like charge transport in organic field effect transistor: A study on effective channel thickness

    Science.gov (United States)

    Kavala, A. K.; Mukherjee, A. K.

    2015-09-01

    A short channel organic field effect transistors (OFET) based on Pentacene, having channel length in the range of sub-micrometer, has been numerically modelled for low values of drain voltage. The output characteristics show a nonlinear concave increase of drain current for all values of gate voltages. This anomalous current-voltage behavior, which resembles sub-threshold characteristics of silicon FETs, shows a good match with earlier experimental reports on OFET at low drain voltages. The sub-threshold-like characteristics has been interpreted in light of thermionic-emission model because of the presence of hole injection barrier at drain (gold)/Pentacene interface. The associated analysis has facilitated to obtain a significant parameter, effective channel thickness (teff), for the first time in case of OFETs. It came out to be roughly 4 nm and 8 nm for experimental devices of poly(3-hexylthiophene-2,5-diyl) and Pentacene, respectively, while the numerically modelled device yielded a value of about 60 nm. Increase of teff with transverse gate electric field is also observed. Physical explanation of the observations is also presented.

  3. Label-free attomolar detection of lactate based on radio frequency sputtered of nickel oxide thin film field effect transistor.

    Science.gov (United States)

    Mansouri Majd, Samira; Salimi, Abdollah; Astinchap, Bandar

    2017-06-15

    The radio frequency sputtered nickel oxide thin film nanostrtablucture deposited on glass substrate was used as a potential matrix for the realization of highly sensitive and selective field effect transistor-type lactate biosensor. Firstly, NiO-FET was tested for NADH detection showing a linear concentration range 1aM to 1nM and a low detection limit of 0.2aM. Then, NiO surface modified with chitosan and functionalized with glutaraldehyde and lactate dehydrogenase enzyme was immobilized on the aldehyde terminal. The biosensor is found to exhibit highly efficient sensing response characteristics with good linearity of 1aM to 1pM and low limit of detection of 0.5aM. The biosensor shows high stability without interferences from commonly interfering compounds in biological fluids, including uric acid, ascorbic acid, glucose and acetaminophen. Furthermore, the application of the proposed biosensor for analysis of lactate in artificial serum samples was evaluated with good satisfactory results. This protocol can be used to develop of disposable, low cost, and portable various types of dehydrogenase based biosensor devices using metal oxide nanomaterials. Copyright © 2016 Elsevier B.V. All rights reserved.

  4. Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors

    Science.gov (United States)

    Jung, Haesun; Choi, Sungju; Jang, Jun Tae; Yoon, Jinsu; Lee, Juhee; Lee, Yongwoo; Rhee, Jihyun; Ahn, Geumho; Yu, Hye Ri; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan

    2018-02-01

    We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS tests and interface trap extraction, BS instability is explained regardless of either the BS polarity or ambient condition, using a single platform constituted by four key factors: OH- adsorption/desorption followed by a change in carrier concentration, electron concentration in CNT channel corroborated with H2O/O2 molecules in ambient, charge trapping/detrapping, and interface trap generation. Under negative BS (NBS), the negative threshold voltage shift (ΔVT) is dominated by OH- desorption, which is followed by hole trapping in the interface and/or gate insulator. Under positive BS (PBS), the positive ΔVT is dominated by OH- adsorption, which is followed by electron trapping in the interface and/or gate insulator. This instability is compensated by interface trap extraction; PBS instability is slightly more complicated than NBS instability. Furthermore, our model is verified using device simulation, which gives insights on how much each mechanism contributes to BS instability. Our result is potentially useful for the design of highly stable CNT-based flexible circuits in the Internet of Things wearable healthcare era.

  5. A comparison between bottom contact and top contact all organic field effect transistors assembled by soft lithography

    International Nuclear Information System (INIS)

    Cosseddu, P.; Bonfiglio, A.

    2007-01-01

    All-organic Field Effect Transistors (FETs) on plastic were fabricated by means of an innovative, simple and inexpensive technique. A thin Mylar (registered) foil acts both as substrate and gate dielectric. We used pentacene, deposited by thermal sublimation, as semiconducting layer while contacts were fabricated with poly(ethylene-dioxythiophene)/polystyrene sulfonate (PEDOT/PSS) by means of soft lithography. On the opposite side of the foil a thin PEDOT/PSS film, acting as gate electrode, was spin coated. It is worth noting that this technique allows the realization of bottom contact and top contact devices on the same substrate and with the same semiconducting layer. Furthermore, assisted by Scanning Probe Microscopy investigations, we investigated how the device structure influences its electrical properties in terms of hole mobility, Series Contact Resistance and parasitic capacitance effects. The comparison between top-contact and bottom-contact devices shows interesting marked differences that can be mainly attributed to a different quality of PEDOT/PSS-semiconductor interface. The flexibility of the obtained structure and the easy scalability of the technological process open the way for economic production of high-resolution organic devices

  6. Gate dielectric surface treatments for performance improvement of poly(3-hexylthiophene-2,5-diyl) based organic field-effect transistors

    Science.gov (United States)

    Nawaz, Ali; de, Cristiane, , Col; Cruz-Cruz, Isidro; Kumar, Anshu; Kumar, Anil; Hümmelgen, Ivo A.

    2015-08-01

    We report on enhanced performance in poly(3-hexylthiophene-2,5-diyl) (P3HT) based organic field effect transistors (OFETs) achieved by improvement in hole transport along the channel near the insulator/semiconductor (I/S) interface. The improvement in hole transport is demonstrated to occur very close to the I/S interface, after treatment of the insulator layer with sodium dodecyl sulfate (SDS). SDS is an anionic surfactant, with negatively charged heads, known for formation of micelles above critical micelle concentration (CMC), which contribute to the passivation of positively charged traps. Investigation of field-effect mobility (μFET) as a function of channel bottleneck thickness in OFETs reveals the favorable gate voltage regime where mobility is the highest. In addition, it shows that the gate dielectric surface treatment not only leads to an increase in mobility in that regime, but also displaces charge transport closer to the interface, hence pointing toward passivation of the charge traps at I/S interface. OFETs with SDS treatment were compared with untreated and vitamin C or hexadecyltrimethylammonium bromide (CTAB) treated OFETs. All the treatments resulted in significant improvements in specific dielectric capacitance, μFET, on/off current ratio and transconductance.

  7. Pulse-Driven Capacitive Lead Ion Detection with Reduced Graphene Oxide Field-Effect Transistor Integrated with an Analyzing Device for Rapid Water Quality Monitoring.

    Science.gov (United States)

    Maity, Arnab; Sui, Xiaoyu; Tarman, Chad R; Pu, Haihui; Chang, Jingbo; Zhou, Guihua; Ren, Ren; Mao, Shun; Chen, Junhong

    2017-11-22

    Rapid and real-time detection of heavy metals in water with a portable microsystem is a growing demand in the field of environmental monitoring, food safety, and future cyber-physical infrastructure. Here, we report a novel ultrasensitive pulse-driven capacitance-based lead ion sensor using self-assembled graphene oxide (GO) monolayer deposition strategy to recognize the heavy metal ions in water. The overall field-effect transistor (FET) structure consists of a thermally reduced graphene oxide (rGO) channel with a thin layer of Al 2 O 3 passivation as a top gate combined with sputtered gold nanoparticles that link with the glutathione (GSH) probe to attract Pb 2+ ions in water. Using a preprogrammed microcontroller, chemo-capacitance based detection of lead ions has been demonstrated with this FET sensor. With a rapid response (∼1-2 s) and negligible signal drift, a limit of detection (LOD) < 1 ppb and excellent selectivity (with a sensitivity to lead ions 1 order of magnitude higher than that of interfering ions) can be achieved for Pb 2+ measurements. The overall assay time (∼10 s) for background water stabilization followed by lead ion testing and calculation is much shorter than common FET resistance/current measurements (∼minutes) and other conventional methods, such as optical and inductively coupled plasma methods (∼hours). An approximate linear operational range (5-20 ppb) around 15 ppb (the maximum contaminant limit by US Environmental Protection Agency (EPA) for lead in drinking water) makes it especially suitable for drinking water quality monitoring. The validity of the pulse method is confirmed by quantifying Pb 2+ in various real water samples such as tap, lake, and river water with an accuracy ∼75%. This capacitance measurement strategy is promising and can be readily extended to various FET-based sensor devices for other targets.

  8. Contribution to the study of fluctuations in transistors (bipolar and junction field effect types)

    International Nuclear Information System (INIS)

    Borel, J.

    1970-01-01

    A brief review of the basic theory of fluctuations in semiconductors is given: shot, thermal low frequency noise. A measuring set has been built to draw noise spectrums (current or voltage). Noise parameters of bipolar transistors are given, mainly noise voltage. Noise current, noise factor and correlation between noise sources are also calculated. Measurements of noise parameters fit well with theory for various devices made in different technologies: alloyed, mesa, planar. Then we give results of the calculation of noise parameters in a FET starting from a simplified model of the device. Low frequency noise is taken into account. Measurements of the parameters and of the spectrum agree fairly well with the theory. Studies of low frequency noise versus temperature give the density and energy of traps located in the space charge layers and an idea of the impurity encountered in these space charge layers [fr

  9. Modeling of strain effects on the device behaviors of ferroelectric memory field-effect transistors

    International Nuclear Information System (INIS)

    Yang, Feng; Hu, Guangda; Wu, Weibing; Yang, Changhong; Wu, Haitao; Tang, Minghua

    2013-01-01

    The influence of strains on the channel current–gate voltage behaviors and memory windows of ferroelectric memory field-effect transistors (FeMFETs) were studied using an improved model based on the Landau–Devonshire theory. ‘Channel potential–gate voltage’ ferroelectric polarization and silicon surface potential diagrams were constructed for strained single-domain BaTiO 3 FeMFETs. The compressive strains can increase (or decrease) the amplitude of transistor currents and enlarge memory windows. However, tensile strains only decrease the maximum value of transistor currents and compress memory windows. Mismatch strains were found to have a significant influence on the electrical behaviors of the devices, therefore, they must be considered in FeMFET device designing. (fast track communication)

  10. Unidirectional coating technology for organic field-effect transistors: materials and methods

    Science.gov (United States)

    Sun, Huabin; Wang, Qijing; Qian, Jun; Yin, Yao; Shi, Yi; Li, Yun

    2015-05-01

    Solution-processed organic field-effect transistors (OFETs) are essential for developing organic electronics. The encouraging development in solution-processed OFETs has attracted research interest because of their potential in low-cost devices with performance comparable to polycrystalline-silicon-based transistors. In recent years, unidirectional coating technology, featuring thin-film coating along only one direction and involving specific materials as well as solution-assisted fabrication methods, has attracted intensive interest. Transistors with organic semiconductor layers, which are deposited via unidirectional coating methods, have achieved high performance. In particular, carrier mobility has been greatly enhanced to values much higher than 10 cm2 V-1 s-1. Such significant improvement is mainly attributed to better control in morphology and molecular packing arrangement of organic thin film. In this review, typical materials that are being used in OFETs are discussed, and demonstrations of unidirectional coating methods are surveyed.

  11. Fabrication of metal nanopatterns for organic field effect transistor electrodes by cracking and transfer printing

    Science.gov (United States)

    Wang, Xiaonan; Fu, Tingting; Wang, Zhe

    2018-04-01

    In this paper, we demonstrate a novel method for fabricating metal nanopatterns using cracking to address the limitations of traditional techniques. Parallel crack arrays were created in a polydimethylsiloxane (PDMS) mold using a combination of surface modification and control of strain fields. The elastic PDMS containing the crack arrays was subsequently used as a stamp to prepare nanoscale metal patterns on a substrate by transfer printing. To illustrate the functionality of this technique, we employed the metal patterns as the source and drain contacts of an organic field effect transistor. Using this approach, we fabricated transistors with channel lengths ranging from 70–600 nm. The performance of these devices when the channel length was reduced was studied. The drive current density increases as expected, indicating the creation of operational transistors with recognizable properties.

  12. Extended Gate Field-Effect Transistor Biosensors for Point-Of-Care Testing of Uric Acid.

    Science.gov (United States)

    Guan, Weihua; Reed, Mark A

    2017-01-01

    An enzyme-free redox potential sensor using off-chip extended-gate field effect transistor (EGFET) with a ferrocenyl-alkanethiol modified gold electrode has been used to quantify uric acid concentration in human serum and urine. Hexacyanoferrate (II) and (III) ions are used as redox reagent. The potentiometric sensor measures the interface potential on the ferrocene immobilized gold electrode, which is modulated by the redox reaction between uric acid and hexacyanoferrate ions. The device shows a near Nernstian response to uric acid and is highly specific to uric acid in human serum and urine. The interference that comes from glucose, bilirubin, ascorbic acid, and hemoglobin is negligible in the normal concentration range of these interferents. The sensor also exhibits excellent long term reliability and is regenerative. This extended gate field effect transistor based sensor is promising for point-of-care detection of uric acid due to the small size, low cost, and low sample volume consumption.

  13. Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

    Science.gov (United States)

    Kanbur, Yasin; Irimia-Vladu, Mihai; Głowacki, Eric D.; Voss, Gundula; Baumgartner, Melanie; Schwabegger, Günther; Leonat, Lucia; Ullah, Mujeeb; Sarica, Hizir; Erten-Ela, Sule; Schwödiauer, Reinhard; Sitter, Helmut; Küçükyavuz, Zuhal; Bauer, Siegfried; Sariciftci, Niyazi Serdar

    2012-01-01

    We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C60 as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm2/Vs. Devices with pentacene showed a mobility of 0.16 cm2/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of ∼0.3 cm2/Vs. These devices demonstrate low hysteresis and operational stability over at least several months. Grazing-angle infrared spectroscopy of evaporated thin films shows that the structure of the polyethylene is similar to solution-cast films. We report also on the morphological and dielectric properties of these films. Our experiments demonstrate that polyethylene is a stable dielectric supporting both hole and electron channels. PMID:23483783

  14. Graphene Field Effect Transistor-Based Detectors for Detection of Ionizing Radiation

    International Nuclear Information System (INIS)

    Jovanovic, Igor; Cazalas, Edward; Childres, I.; Patil, A.; Koybasi, O.; Chen, Y-P.

    2013-06-01

    We present the results of our recent efforts to develop novel ionizing radiation sensors based on the nano-material graphene. Graphene used in the field effect transistor architecture could be employed to detect the radiation-induced charge carriers produced in undoped semiconductor absorber substrates, even without the need for charge collection. The detection principle is based on the high sensitivity of graphene to ionization-induced local electric field perturbations in the electrically biased substrate. We experimentally demonstrated promising performance of graphene field effect transistors for detection of visible light, X-rays, gamma-rays, and alpha particles. We propose improved detector architectures which could result in a significant improvement of speed necessary for pulsed mode operation. (authors)

  15. Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

    International Nuclear Information System (INIS)

    Toccoli, T.; Pallaoro, A.; Coppede, N.; Iannotta, S.; De Angelis, F.; Mariucci, L.; Fortunato, G.

    2006-01-01

    We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (K E ). The major role played by K E is in achieving highly ordered and flat films. In the range K E ≅3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor ∼5. The highest value (1.0 cm 2 V -1 s -1 ) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at K E >6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at K E ≤5.5 eV

  16. High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts.

    Science.gov (United States)

    Dankert, André; Langouche, Lennart; Kamalakar, Mutta Venkata; Dash, Saroj Prasad

    2014-01-28

    Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nanoelectronic, optoelectronic, and spintronic applications. Here, we investigate the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics. In such devices, we elucidate that the presence of a large Schottky barrier resistance at the MoS2/ferromagnet interface is a major obstacle for the electrical spin injection and detection. We circumvent this problem by a reduction in the Schottky barrier height with the introduction of a thin TiO2 tunnel barrier between the ferromagnet and MoS2. This results in an enhancement of the transistor on-state current by 2 orders of magnitude and an increment in the field-effect mobility by a factor of 6. Our magnetoresistance calculation reveals that such integration of ferromagnetic tunnel contacts opens up the possibilities for MoS2-based spintronic devices.

  17. Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

    KAUST Repository

    Kanimozhi, Catherine K.

    2012-10-10

    In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to ∼1100 nm) and field-effect electron mobility values of >1 cm 2 V -1 s -1. The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics. © 2012 American Chemical Society.

  18. Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    KAUST Repository

    Montes Muñoz, Enrique

    2017-01-24

    We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green\\'s function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.

  19. In-situ tuning threshold voltage of field-effect transistors based on blends of poly(3-hexylthiophene) with an insulator electret

    Science.gov (United States)

    Lu, Guanghao; Koch, Norbert; Neher, Dieter

    2015-08-01

    Blending the conjugated polymer poly(3-hexylthiophene) (P3HT) with the insulating electret polystyrene (PS), we show that the threshold voltage Vt of organic field-effect transistors (OFETs) can be easily and reversely tuned by applying a gate bias stress at 130 °C. It is proposed that this phenomenon is caused by thermally activated charge injection from P3HT into PS matrix, and that this charge is immobilized within the PS matrix after cooling down to room temperature. Therefore, room-temperature hysteresis-free FETs with desired Vt can be easily achieved. The approach is applied to reversely tune the OFET mode of operation from accumulation to depletion, and to build inverters.

  20. Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

    Science.gov (United States)

    Nugraha, Mohamad I; Häusermann, Roger; Watanabe, Shun; Matsui, Hiroyuki; Sytnyk, Mykhailo; Heiss, Wolfgang; Takeya, Jun; Loi, Maria A

    2017-02-08

    We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport.

  1. Design and simulation of high-breakdown-voltage GaN-based vertical field-effect transistor with interfacial charge engineering

    Science.gov (United States)

    Du, Jiangfeng; Liu, Dong; Bai, Zhiyuan; Luo, Qian; Yu, Qi

    2016-05-01

    A high-breakdown-voltage GaN-based vertical field-effect transistor with negative fixed interfacial charge engineering (GaN ICE-VHFET) is proposed in this work. The negative charge inverts an n-GaN buffer layer along the oxide/GaN interface, inducing a vertical hole layer. Thus, the entire buffer layer consists of a p+-hole inversion layer and an n-pillar buffer layer, and the p-pillar laterally depletes the n-GaN buffer layer, and the electric field distribution becomes more uniform. Simulation results show that the breakdown voltage of the GaN ICE-VHFET increases by 193% and the on-resistance of such a device is still very low when compared with those of conventional vertical FETs. Its figure of merit even exceeds the GaN one-dimensional limit.

  2. Multifunctional Self-Assembled Monolayers for Organic Field-Effect Transistors

    Science.gov (United States)

    Cernetic, Nathan

    Organic field effect transistors (OFETs) have the potential to reach commercialization for a wide variety of applications such as active matrix display circuitry, chemical and biological sensing, radio-frequency identification devices and flexible electronics. In order to be commercially competitive with already at-market amorphous silicon devices, OFETs need to approach similar performance levels. Significant progress has been made in developing high performance organic semiconductors and dielectric materials. Additionally, a common route to improve the performance metric of OFETs is via interface modification at the critical dielectric/semiconductor and electrode/semiconductor interface which often play a significant role in charge transport properties. These metal oxide interfaces are typically modified with rationally designed multifunctional self-assembled monolayers. As means toward improving the performance metrics of OFETs, rationally designed multifunctional self-assembled monolayers are used to explore the relationship between surface energy, SAM order, and SAM dipole on OFET performance. The studies presented within are (1) development of a multifunctional SAM capable of simultaneously modifying dielectric and metal surface while maintaining compatibility with solution processed techniques (2) exploration of the relationship between SAM dipole and anchor group on graphene transistors, and (3) development of self-assembled monolayer field-effect transistor in which the traditional thick organic semiconductor is replaced by a rationally designed self-assembled monolayer semiconductor. The findings presented within represent advancement in the understanding of the influence of self-assembled monolayers on OFETs as well as progress towards rationally designed monolayer transistors.

  3. Evaluation of photovoltaic power generation system using spherical silicon solar cells and SiC-FET inverter

    Science.gov (United States)

    Matsumoto, Taisuke; Oku, Takeo; Hiramatsu, Koichi; Yasuda, Masashi; Shirahata, Yasuhiro; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2016-02-01

    A photovoltaic power generation system using spherical silicon (Si) solar cells and silicon carbide (SiC) field effect transistor (FET) inverter for photovoltaic applications was constructed and evaluated. The spherical Si solar cells were connected to the SiC-FET inverter and were used as a power source. Comparing the photovoltaic power generation system using an ordinary Si-FET inverter, direct current-alternating current conversion efficiencies of the SiC-FET inverter were improved due to reduction of power loss in the SiC-FET inverter.

  4. Organic Field Effect Transistors with Dipole-Polarized Polymer Gate Dielectrics for Control of Threshold Voltage

    OpenAIRE

    Sakai, Heisuke; Takahashi, Yoshikazu; Murata, Hideyuki

    2007-01-01

    The authors demonstrate organic field effect transistors (OFETs) with a dipole-polarized polyurea for the gate dielectrics. In the dielectrics, the internal electric field induces the mobile charge carrier in the semiconductor layer to the semiconductor-dielectric interface. OFETs with dipole-polarized gate dielectrics exhibit lower threshold voltage. With nonpolarized gate dielectrics, the threshold voltage was -11.4 V, whereas that decreased to -5.3 V with polarized gate dielectrics. In a...

  5. Charge carrier transport in polycrystalline organic thin film based field effect transistors

    Science.gov (United States)

    Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

    2016-05-01

    The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

  6. Organic phthalocyanine films with high mobilities for efficient field-effect transistor switches

    Czech Academy of Sciences Publication Activity Database

    Schauer, F.; Zhivkov, I.; Nešpůrek, Stanislav

    266-269, 1-3 (2000), s. 999-1003 ISSN 0022-3093. [International Conference on Amorphous and Microcrystalline Semiconductors /18./. Snowbird, 23.08.1999-27.08.1999] R&D Projects: GA MŠk OC 518.10; GA AV ČR KSK2050602 Institutional research plan: CEZ:AV0Z4050913 Keywords : phthalocyanine * charge mobility * field-effect transistor Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.269, year: 2000

  7. Gate-induced carrier delocalization in quantum dot field effect transistors.

    Science.gov (United States)

    Turk, Michael E; Choi, Ji-Hyuk; Oh, Soong Ju; Fafarman, Aaron T; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R; Kikkawa, James M

    2014-10-08

    We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the "localization product" (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.

  8. Direct-current amplifier using a field effect transistor as entrance element

    International Nuclear Information System (INIS)

    Quenee, R.; Vaux, Ch.

    1967-01-01

    The difficulties associated with the construction of amplifier for small direct-currents using presently available semi-conductors are first pointed out. A detailed description is given of an amplifier with direct connections making use of a MOS-type field-effect transistor, and average characteristics for six amplifiers are then presented. The various causes of drift and their corrections are analyzed in the appendix, as well as the possibilities of measuring very small currents. (authors) [fr

  9. Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

    KAUST Repository

    Lan, Yann Wen

    2016-09-05

    The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

  10. Incorporating TCNQ into thiophene-fused heptacene for n-channel field effect transistor

    KAUST Repository

    Ye, Qun

    2012-06-01

    Incorporation of electron-deficient tetracyanoquinodimethane (TCNQ) into electron-rich thiophene-fused heptacene was successfully achieved for the purpose of stabilizing longer acenes and generating new n-type organic semiconductors. The heptacene-TCNQ derivative 1 was found to have good stability and an expected electron transporting property. Electron mobility up to 0.01 cm 2 V -1 s -1 has been obtained for this novel material in solution processed organic field effect transistors. © 2012 American Chemical Society.

  11. Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.

    Science.gov (United States)

    Yuan, Shuoguo; Yang, Zhibin; Xie, Chao; Yan, Feng; Dai, Jiyan; Lau, Shu Ping; Chan, Helen L W; Hao, Jianhua

    2016-12-01

    A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Bisacenaphthopyrazinoquinoxaline derivatives: Synthesis, physical properties and applications as semiconductors for n-channel field effect transistors

    KAUST Repository

    Tong, Chenhua

    2013-01-01

    Several bisacenaphthopyrazinoquinoxaline (BAPQ) based derivatives 1-3 were synthesized by condensation between the acenaphthenequinones and 1,2,4,5-tetraaminobenzene tetrahydrochloride. Their optical, electrochemical and self-assembling properties are tuned by different substituents. Among them, compound 3 possesses a homogeneously distributed low-lying LUMO due to the peripheral substitution with four cyano groups. The corresponding n-channel field effect transistors showed a field effect electron mobility of 5 × 10-3 cm2 V-1 s-1. © 2013 The Royal Society of Chemistry.

  13. 3D modeling of dual-gate FinFET

    Science.gov (United States)

    Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

    2012-11-01

    The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at V g1 > V g2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

  14. Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications

    International Nuclear Information System (INIS)

    Nozaki, D; Kunstmann, J; Zoergiebel, F; Cuniberti, G; Weber, W M; Mikolajick, T

    2011-01-01

    We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite element method is used to model realistic device geometries and to calculate the electrostatic potential across the Schottky barrier by solving the Poisson equation, and (2) the Landauer-Buettiker approach combined with the method of non-equilibrium Green's functions is employed to calculate the charge transport through the device. Our model correctly reproduces typical I-V characteristics of field-effect transistors, and the dependence of the saturated drain current on the gate field and the device geometry are in good agreement with experiments. Our approach is suitable for one-dimensional Schottky-barrier field-effect transistors of arbitrary device geometry and it is intended to be a simulation platform for the development of nanowire-based sensors.

  15. Tunable SnSe2/WSe2Heterostructure Tunneling Field Effect Transistor.

    Science.gov (United States)

    Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2017-09-01

    The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Investigations on field-effect transistors based on two-dimensional materials

    Energy Technology Data Exchange (ETDEWEB)

    Finge, T.; Riederer, F.; Grap, T.; Knoch, J. [Institute of Semiconductor Electronics, RWTH Aachen University (Germany); Mueller, M.R. [Institute of Semiconductor Electronics, RWTH Aachen University (Germany); Infineon Technologies, Villach (Austria); Kallis, K. [Intelligent Microsystems Chair, TU Dortmund University (Germany)

    2017-11-15

    In the present article, experimental and theoretical investigations regarding field-effect transistors based on two-dimensional (2D) materials are presented. First, the properties of contacts between a metal and 2D material are discussed. To this end, metal-to-graphene contacts as well to transition metal dichalcogenides (TMD) are studied. Whereas metal-graphene contacts can be tuned with an appropriate back-gate, metal-TMD contacts exhibit strong Fermi level pinning showing substantially limited maximum possible drive current. Next, tungsten diselenide (WSe{sub 2}) field-effect transistors are presented. Employing buried-triple-gate substrates allows tuning source, channel and drain by applying appropriate gate voltages so that the device can be reconfigured to work as n-type, p-type and as so-called band-to-band tunnel field-effect transistor on the same WSe{sub 2} flake. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. The memory effect of a pentacene field-effect transistor with a polarizable gate dielectric

    Science.gov (United States)

    Unni, K. N. N.; de Bettignies, Remi; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel

    2004-06-01

    The nonvolatile transistor memory element is an interesting topic in organic electronics. In this case a memory cell consists of only one device where the stored information is written as a gate insulator polarization by a gate voltage pulse and read by the channel conductance control with channel voltage pulse without destruction of the stored information. Therefore such transistor could be the base of non-volatile non-destructively readable computer memory of extremely high density. Also devices with polarizable gate dielectrics can function more effectively in certain circuits. The effective threshold voltage Vt can be brought very close to zero, for applications where the available gate voltage is limited. Resonant and adaptive circuits can be tuned insitu by polarizing the gates. Poly(vinylidene fluoride), PVDF and its copolymer with trifluoroethylene P(VDF-TrFE) are among the best known and most widely used ferroelectric polymers. In this manuscript, we report new results of an organic FET, fabricated with pentacene as the active material and P(VDF-TrFE) as the gate insulator. Application of a writing voltage of -50 V for short duration results in significant change in the threshold voltage and remarkable increase in the drain current. The memory effect is retained over a period of 20 hours.

  18. Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications

    Science.gov (United States)

    Kang, Sangwoo; Mou, Xuehao; Fallahazad, Babak; Prasad, Nitin; Wu, Xian; Valsaraj, Amithraj; Movva, Hema C. P.; Kim, Kyounghwan; Tutuc, Emanuel; Register, Leonard F.; Banerjee, Sanjay K.

    2017-09-01

    The scaling challenges of complementary metal oxide semiconductors (CMOS) are increasing with the pace of scaling showing marked signs of slowing down. This slowing has brought about a widespread search for an alternative beyond-CMOS device concept. While the charge tunneling phenomenon has been known for almost a century, and tunneling based transistors have been studied in the past few decades, its possibilities are being re-examined with the emergence of a new class of two-dimensional (2D) materials. By stacking varying 2D materials together, with two electrode layers sandwiching a tunnel dielectric layer, it could be possible to make vertical tunnel transistors without the limitations that have plagued such devices implemented within other material systems. When the two electrode layers are of the same material, under certain conditions, one can achieve resonant tunneling between the two layers, manifesting as negative differential resistance (NDR) in the interlayer current-voltage characteristics. We call this type of device an interlayer tunnel FET (ITFET). We review the basic operation principles of this device, experimental and theoretical studies, and benchmark simulation results for several digital logic gates based on a compact model that we developed. The results are placed in the context of work going on in other groups.

  19. An All-Solid-State pH Sensor Employing Fluorine-Terminated Polycrystalline Boron-Doped Diamond as a pH-Insensitive Solution-Gate Field-Effect Transistor.

    Science.gov (United States)

    Shintani, Yukihiro; Kobayashi, Mikinori; Kawarada, Hiroshi

    2017-05-05

    A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2-10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

  20. Nature of size effects in compact models of field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Torkhov, N. A., E-mail: trkf@mail.ru [Tomsk State University, Tomsk 634050 (Russian Federation); Scientific-Research Institute of Semiconductor Devices, Tomsk 634050 (Russian Federation); Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050 (Russian Federation); Babak, L. I.; Kokolov, A. A.; Salnikov, A. S.; Dobush, I. M. [Tomsk State University of Control Systems and Radioelectronics, Tomsk 634050 (Russian Federation); Novikov, V. A., E-mail: novikovvadim@mail.ru; Ivonin, I. V. [Tomsk State University, Tomsk 634050 (Russian Federation)

    2016-03-07

    Investigations have shown that in the local approximation (for sizes L < 100 μm), AlGaN/GaN high electron mobility transistor (HEMT) structures satisfy to all properties of chaotic systems and can be described in the language of fractal geometry of fractional dimensions. For such objects, values of their electrophysical characteristics depend on the linear sizes of the examined regions, which explain the presence of the so-called size effects—dependences of the electrophysical and instrumental characteristics on the linear sizes of the active elements of semiconductor devices. In the present work, a relationship has been established for the linear model parameters of the equivalent circuit elements of internal transistors with fractal geometry of the heteroepitaxial structure manifested through a dependence of its relative electrophysical characteristics on the linear sizes of the examined surface areas. For the HEMTs, this implies dependences of their relative static (A/mm, mA/V/mm, Ω/mm, etc.) and microwave characteristics (W/mm) on the width d of the sink-source channel and on the number of sections n that leads to a nonlinear dependence of the retrieved parameter values of equivalent circuit elements of linear internal transistor models on n and d. Thus, it has been demonstrated that the size effects in semiconductors determined by the fractal geometry must be taken into account when investigating the properties of semiconductor objects on the levels less than the local approximation limit and designing and manufacturing field effect transistors. In general, the suggested approach allows a complex of problems to be solved on designing, optimizing, and retrieving the parameters of equivalent circuits of linear and nonlinear models of not only field effect transistors but also any arbitrary semiconductor devices with nonlinear instrumental characteristics.

  1. Field-Induced Superconductivity in Electric Double Layer Transistors

    NARCIS (Netherlands)

    Ueno, Kazunori; Shimotani, Hidekazu; Yuan, Hongtao; Ye, Jianting; Kawasaki, Masashi; Iwasa, Yoshihiro

    Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electric-field-induced superconductivity was believed to be

  2. Strain characterization of FinFETs using Raman spectroscopy

    NARCIS (Netherlands)

    Kaleli, B.; van Hemert, T.; Hueting, Raymond Josephus Engelbart; Wolters, Robertus A.M.

    2013-01-01

    Metal induced strain in the channel region of silicon (Si) fin-field effect transistor (FinFET) devices has been characterized using Raman spectroscopy. The strain originates from the difference in thermal expansion coefficient of Si and titanium-nitride. The Raman map of the device region is used

  3. Low Temperature Characterization of PMOS-type Gate-all-around Silicon nanowire FETs as single-hole-transistors

    Science.gov (United States)

    Hong, B. H.; Hwang, S. W.; Lee, Y. Y.; Son, M. H.; Ahn, D.; Cho, K. H.; Yeo, K. H.; Kim, D.-W.; Jin, G. Y.; Park, D.

    2011-12-01

    We report the single hole tunneling characteristics observed from a PMOS-type gate-all-around silicon nanowire field-effect-transistor with the radius 5 nm and the length 44 nm. The total capacitance of the quantum dot obtained from the measured Coulomb oscillations and Coulomb diamonds matches with the ideal capacitance of the silicon cylinder. It suggests that the observed single hole tunneling is originated from the fabricated structure.

  4. PH MEASUREMENTS WITH AN ION SENSITIVE FIELD-EFFECT TRANSISTOR IN THE MOUTH OF PATIENTS WITH XEROSTOMIA

    NARCIS (Netherlands)

    VISCH, LL; BERGVELD, P; LAMPRECHT, W; SGRAVENMADE, EJ

    A transistor pH electrode (ion sensitive field effect transistor), placed in the upper dentures of eleven xerostomia patients and five healthy volunteers, was used to register pH changes in five-, six- and seven-day-old dental plaque. A mouth rinse with a 10% sucrose solution caused a pH fall of

  5. Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors

    Directory of Open Access Journals (Sweden)

    Gorev N. B.

    2007-12-01

    Full Text Available It is shown that the threshold voltage of a GaAs ion-implanted metal-semiconductor field-effect transistor corresponds with a good accuracy to the voltage at which an inflection point appears in the capacitance-voltage characteristic. A method for predicting the threshold voltage of ion-implanted field-effect transistors using capacitance-voltage measurements prior to contact formation is proposed.

  6. Patterning technology for solution-processed organic crystal field-effect transistors

    Science.gov (United States)

    Li, Yun; Sun, Huabin; Shi, Yi; Tsukagoshi, Kazuhito

    2014-01-01

    Organic field-effect transistors (OFETs) are fundamental building blocks for various state-of-the-art electronic devices. Solution-processed organic crystals are appreciable materials for these applications because they facilitate large-scale, low-cost fabrication of devices with high performance. Patterning organic crystal transistors into well-defined geometric features is necessary to develop these crystals into practical semiconductors. This review provides an update on recentdevelopment in patterning technology for solution-processed organic crystals and their applications in field-effect transistors. Typical demonstrations are discussed and examined. In particular, our latest research progress on the spin-coating technique from mixture solutions is presented as a promising method to efficiently produce large organic semiconducting crystals on various substrates for high-performance OFETs. This solution-based process also has other excellent advantages, such as phase separation for self-assembled interfaces via one-step spin-coating, self-flattening of rough interfaces, and in situ purification that eliminates the impurity influences. Furthermore, recommendations for future perspectives are presented, and key issues for further development are discussed. PMID:27877656

  7. Patterning technology for solution-processed organic crystal field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yun Li

    2014-04-01

    Full Text Available Organic field-effect transistors (OFETs are fundamental building blocks for various state-of-the-art electronic devices. Solution-processed organic crystals are appreciable materials for these applications because they facilitate large-scale, low-cost fabrication of devices with high performance. Patterning organic crystal transistors into well-defined geometric features is necessary to develop these crystals into practical semiconductors. This review provides an update on recent development in patterning technology for solution-processed organic crystals and their applications in field-effect transistors. Typical demonstrations are discussed and examined. In particular, our latest research progress on the spin-coating technique from mixture solutions is presented as a promising method to efficiently produce large organic semiconducting crystals on various substrates for high-performance OFETs. This solution-based process also has other excellent advantages, such as phase separation for self-assembled interfaces via one-step spin-coating, self-flattening of rough interfaces, and in situ purification that eliminates the impurity influences. Furthermore, recommendations for future perspectives are presented, and key issues for further development are discussed.

  8. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    Science.gov (United States)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  9. Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

    International Nuclear Information System (INIS)

    Klein, P B; Binari, S C

    2003-01-01

    This review is concerned with the characterization and identification of the deep centres that cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy is an optical technique that has been developed to probe the characteristics of these defects. Measured spectral dependences provide information on trap depth, lattice coupling and on the location of the defects in the device structure. The spectrum of an individual trap may also be regarded as a 'fingerprint' of the defect, allowing the trap to be followed in response to the variation of external parameters. The basis for these measurements is derived through a modelling procedure that accounts quantitatively for the light-induced drain current increase in the collapsed device. Applying the model to fit the measured variation of drain current increase with light illumination provides an estimate of the concentrations and photoionization cross-sections of the deep defects. The results of photoionization studies of GaN metal-semiconductor field effect transistors and AlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapour deposition (MOCVD) are presented and the conclusions regarding the nature of the deep traps responsible are discussed. Finally, recent photoionization studies of current collapse induced by short-term (several hours) bias stress in AlGaN/GaN HEMTs are described and analysed for devices grown by both MOCVD and molecular beam epitaxy. (topical review)

  10. Enhancing the electrical properties of a flexible transparent graphene-based field-effect transistor using electropolished copper foil for graphene growth.

    Science.gov (United States)

    Tsai, Lei-Wei; Tai, Nyan-Hwa

    2014-07-09

    Flexible transparent graphene-based field-effect transistors (Gr-FETs) were fabricated using large-area single-layer graphene synthesized through low-pressure chemical vapor deposition on a pretreated copper (Cu) foil, followed by transfer of the graphene from the Cu foil to a poly(ethylene terephthalate) (PET) substrate. The electropolishing method was adopted to smooth the surface of the Cu foil, which is a crucial factor because it affects the defect density of graphene films on the PET substrate after transfer and the electronic transport property of the graphene-based devices. The influence of the electropolishing process on the graphene properties was examined using a Raman spectroscope, a scanning electron microscope, and an optical microscope. When the electropolishing process was adopted to improve the graphene quality, the carrier mobility of the flexible transparent Gr-FETs was enhanced from 90 to 340 cm(2)/(V s). Furthermore, variation of the carrier mobility was lower than 10% when the bending radius of the flexible device was decreased from 6.0 to 1.0 cm.

  11. Ultrasensitive in situ label-free DNA detection using a GaN nanowire-based extended-gate field-effect-transistor sensor.

    Science.gov (United States)

    Chen, Chin-Pei; Ganguly, Abhijit; Lu, Ching-Ying; Chen, Ting-Yu; Kuo, Chun-Chiang; Chen, Reui-San; Tu, Wen-Hsun; Fischer, Wolfgang B; Chen, Kuei-Hsien; Chen, Li-Chyong

    2011-03-15

    In this study, we have successfully demonstrated that a GaN nanowire (GaNNW) based extended-gate field-effect-transistor (EGFET) biosensor is capable of specific DNA sequence identification under label-free in situ conditions. Our approach shows excellent integration of the wide bandgap semiconducting nature of GaN, surface-sensitivity of the NW-structure, and high transducing performance of the EGFET-design. The simple sensor-architecture, by direct assembly of as-synthesized GaNNWs with a commercial FET device, can achieve an ultrahigh detection limit below attomolar level concentrations: about 3 orders of magnitude higher in resolution than that of other FET-based DNA-sensors. Comparative in situ studies on mismatches ("hotspot" mutations related to human p53 tumor-suppressor gene) and complementary targets reveal excellent selectivity and specificity of the sensor, even in the presence of noncomplementary DNA strands, suggesting the potential pragmatic application in complex clinical samples. In comparison with GaN thin film, NW-based EGFET exhibits excellent performance with about 2 orders higher sensitivity, over a wide detection range, 10(-19)-10(-6) M, reaching about a 6-orders lower detection limit. Investigations illustrate the unique and distinguished feature of nanomaterials. Detailed studies indicate a positive effect of energy band alignment at the biomaterials-semiconductor hybrid interface influencing the effective capacitance and carrier-mobility of the system.

  12. Capacitive effective thickness of a few nanometers by atomic layer deposition and device performance in Ge gate-all-around fin field effect transistors

    Science.gov (United States)

    Chu, Chu-Lin; Chen, Bo-Yuan; Fuh, Yiin-Kuen

    2015-10-01

    Ge gate-all-around fin field-effect transistors (Ge FinFETs) with a capacitive effective thickness of a few nanometers have been successfully achieved via atomic-layer-deposited (ALD) high-dielectric Al2O3 on GeO2/Ge and by adopting low-cost thermo ALD equipment. The MOS interface properties of the ZrO2 or Al2O3/GeO2/Ge structures have been studied systematically. It has been found that a GeO2 interfacial layer that is greater than approximately 2.5 nm results in a significant degradation of the MOS interfaces, while an equivalent oxide thickness of MOS interface quality obtained with the technique developed for high-permittivity/Ge gate stacks is also extremely useful for the fabrication of triangle-fin complementary metal oxide semiconductor devices. An I/I ratio of 3.2×104 and a subthreshold swing of 103 mV/dec were obtained for the triangular n-type Ge gate-all-around FET with (111) sidewalls. The drain current at VGS-VT=VDS=-1.5 V is 88 mA/mm.

  13. P-channel differential multiple-time programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

    Science.gov (United States)

    Wang, Tai-Min; Chien, Wei-Yu; Hsu, Chia-Ling; Lin, Chrong Jung; King, Ya-Chin

    2018-04-01

    In this paper, we present a new differential p-channel multiple-time programmable (MTP) memory cell that is fully compatible with advanced 16 nm CMOS fin field-effect transistors (FinFET) logic processes. This differential MTP cell stores complementary data in floating gates coupled by a slot contact structure, which make different read currents possible on a single cell. In nanoscale CMOS FinFET logic processes, the gate dielectric layer becomes too thin to retain charges inside floating gates for nonvolatile data storage. By using a differential architecture, the sensing window of the cell can be extended and maintained by an advanced blanket boost scheme. The charge retention problem in floating gate cells can be improved by periodic restoring lost charges when significant read window narrowing occurs. In addition to high programming efficiency, this p-channel MTP cells also exhibit good cycling endurance as well as disturbance immunity. The blanket boost scheme can remedy the charge loss problem under thin gate dielectrics.

  14. SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Okojie, Robert S.; Beheim, Glenn M.; Meredith, Roger; Ferrier, Terry

    2006-01-01

    While there have been numerous reports of short-term transistor operation at 500 degree C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 degree C to be considered viable for most envisioned applications. This paper reports the development of Silicone Carbi field effect transistors capable of long-term electrical operation at 500 degree C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 degree C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 degree C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 degree C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 degree C electrical operation.

  15. Palladium configuration dependence of hydrogen detection sensitivity based on graphene FET for breath analysis

    Science.gov (United States)

    Sakamoto, Yuri; Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

    2018-04-01

    We have succeeded in fabricating a hydrogen gas sensor based on palladium-modified graphene field-effect transistors (FETs). The negative-voltage shift in the transfer characteristics was observed with exposure to hydrogen gas, which was explained by the change in work function. The hydrogen concentration dependence of the voltage shift was investigated using graphene FETs with palladium deposited by three different evaporation processes. The results indicate that the hydrogen detection sensitivity of the palladium-modified graphene FETs is strongly dependent on the palladium configuration. Therefore, the palladium-modified graphene FET is a candidate for breath analysis.

  16. The physical analysis on electrical junction of junctionless FET

    Directory of Open Access Journals (Sweden)

    Lun-Chun Chen

    2017-02-01

    Full Text Available We propose the concept of the electrical junction in a junctionless (JL field-effect-transistor (FET to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW junctionless poly-Si thin-film transistors are used to demonstrate this conception of the electrical junction. Though the dopant and the dosage of the source, of the drain, and of the channel are exactly the same in the JL FET, the transfer characteristics of the JL FET is similar to these of the conventional inversion-mode FET rather than these of a resistor, which is because of the electrical junction at the boundary of the gate and the drain in the JL FET. The electrical junction helps us to understand the JL FET, and also to explain the superior transfer characteristic of the JL FET with the gated raised S/D (Gout structure which reveals low drain-induced-barrier-lowering (DIBL and low breakdown voltage of ion impact ionization.

  17. An ultrasensitive detection of miRNA-155 in breast cancer via direct hybridization assay using two-dimensional molybdenum disulfide field-effect transistor biosensor.

    Science.gov (United States)

    Majd, Samira Mansouri; Salimi, Abdollah; Ghasemi, Foad

    2018-05-15

    MicroRNAs (miRNAs), critical biomarkers of acute and chronic diseases, play key regulatory roles in many biological processes. As a result, robust assay platforms to enable an accurate and efficient detection of low-level miRNAs in complex biological samples are of great significance. In this work, a label-free and direct hybridization assay using molybdenum disulfide (MoS 2 ) field-effect transistor (FET) biosensor has been developed for ultrasensitive detection of miRNA-155 as a breast cancer biomarker in human serum and cell-line samples. MoS 2 , the novel 2D layered material with excellent physical and chemical properties, was prepared through sequential solvent exchange method and was used as an active channel material. MoS 2 was comprehensively characterized by spectroscopic and microscopic methods and it was applied for fabrication of FET device by drop-casting MoS 2 flacks suspension onto the FET surface. MoS 2 FET device showed a relatively low subthreshold swing of 48.10mV/decade and a high mobility of 1.98 × 10 3 cm 2 V -1 s -1 . Subsequently, probe miRNA-155 strands were immobilized on the surface of the MoS 2 FET device. Under optimized conditions detection limit of 0.03fM and concentration range 0.1fM to 10nM were achieved. The developed biosensor not only was capable to identification of fully matched versus one-base mismatch miRNA-155 sequence, but also it could detect target miRNA-155 in spiked real human serum and extracts from human breast cancer cell-line samples. This approach paves a way for label-free, early detection of miRNA as a biomarker in cancer diagnostics with very high sensitivity and good specificity, thus offering a significant potential for clinical application. Copyright © 2018 Elsevier B.V. All rights reserved.

  18. Characterisation of organic field-effect transistors using metal phthalocyanines as active layers

    Energy Technology Data Exchange (ETDEWEB)

    Korodi, Iulia G.; Lehmann, Daniel; Zahn, Dietrich R.T. [Semiconductor Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany); Tippo, Tossapol [Faculty of Engineering and College of Data Storage Technology and Applications, King Mongkut' s Institute of Technology Ladkrabang, Ladkrabang Bangkok 10520 (Thailand); Hietschold, Michael [Solid Surface Analysis Physics, Chemnitz University of Technology, 09107 Chemnitz (Germany)

    2010-02-15

    In this work the performance of organic field-effect transistors (OFETs) using copper phthalocyanine (CuPc) and titanyl phthalocyanine (TiOPc) as active layers is compared. Current/voltage measurements were first performed in vacuum and later under ambient conditions. The highest hole mobility {mu}{sub vac} = (1.5 {+-} 0.6) x 10{sup -3} cm{sup 2}/Vs was obtained for the CuPc OFETs. The mobility remained constant within the error bar after exposing the OFETs to atmosphere ({mu}{sub atm} = (1.2 {+-} 0.2) x 10{sup -3} cm{sup 2}/Vs). For the TiOPc transistors a hole mobility of {mu}{sub vac} = (7.2 {+-} 4.0) x 10{sup -5} cm{sup 2}/Vs was found in vacuum. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Studies on different configurations of cobalt phthalocyanine based flexible organic field effect transistor

    Science.gov (United States)

    Kumar, A.; Jha, P.; Samanta, S.; Singh, A.; Debnath, A. K.; Aswal, D. K.; Gupta, S. K.

    2016-05-01

    Organic Field Effect Transistors (OFETs) are being investigated for a number of low-cost, large area applications; particularly those that are compatible with flexible plastic substrates. Development of low temperature processes can make way for OFETs to be integrated on flexible plastic substrates. Here we have made systematic studies on OFETs in different configurations wherein we have chosen Cobalt Phthalocyanine (CoPc) as active material. We have found the best mobility (1.86 × 10-5 cm2/V-s) in Bottom Gate Top Contact configuration. However, threshold voltage (-5V) and On off ratio (62)were found to be better in Top Gate Bottom Contact configuration The electromechanical properties of the Bottom Gate Top Contact transistors were studied by measuring the transfer characteristics of the devices in bend condition and thereby calculating mobility under different radii of bending. No significant change in the mobility of the device was observed under bent conditions.

  20. Plasmon Field Effect Transistor for Plasmon to Electric Conversion and Amplification.

    Science.gov (United States)

    Shokri Kojori, Hossein; Yun, Ju-Hyung; Paik, Younghun; Kim, Joondong; Anderson, Wayne A; Kim, Sung Jin

    2016-01-13

    Direct coupling of electronic excitations of optical energy via plasmon resonances opens the door to improving gain and selectivity in various optoelectronic applications. We report a new device structure and working mechanisms for plasmon resonance energy detection and electric conversion based on a thin film transistor device with a metal nanostructure incorporated in it. This plasmon field effect transistor collects the plasmonically induced hot electrons from the physically isolated metal nanostructures. These hot electrons contribute to the amplification of the drain current. The internal electric field and quantum tunneling effect at the metal-semiconductor junction enable highly efficient hot electron collection and amplification. Combined with the versatility of plasmonic nanostructures in wavelength tunability, this device architecture offers an ultrawide spectral range that can be used in various applications.

  1. Removing the current-limit of vertical organic field effect transistors

    Science.gov (United States)

    Sheleg, Gil; Greenman, Michael; Lussem, Bjorn; Tessler, Nir

    2017-11-01

    The reported Vertical Organic Field Effect Transistors (VOFETs) show either superior current and switching speeds or well-behaved transistor performance, especially saturation in the output characteristics. Through the study of the relationship between the device architecture or dimensions and the device performance, we find that achieving a saturation regime in the output characteristics requires that the device operates in the injection limited regime. In current structures, the existence of the injection limited regime depends on the source's injection barrier as well as on the buried semiconductor layer thickness. To overcome the injection limit imposed by the necessity of injection barrier, we suggest a new architecture to realize VOFETs. This architecture shows better gate control and is independent of the injection barrier at the source, thus allowing for several A cm-2 for a semiconductor having a mobility value of 0.1 cm2 V-1 s-1.

  2. Tunnel field-effect transistor using InAs nanowire/Si heterojunction

    Science.gov (United States)

    Tomioka, Katsuhiro; Fukui, Takashi

    2011-02-01

    We report on fabrication of tunnel field-effect transistor with III-V nanowire (NW)/Si heterojunction and surrounding-gate structure. The device fabricated by selective-area growth of an n+-InAs/undoped-InAs axial NW on a p+-Si(111) substrate showed switching behavior with an average subthreshold slope (SS) of 104 mV/dec under reverse bias condition. The switching behavior appeared under small supply voltage (Vds=50 mV). Transmission electron microscopy revealed misfit dislocation formed at the interface degraded the SS and ON-state current. Coherent growth without misfit dislocations would promise realization of steep-slope transistor with a SS of <60 mV/dec.

  3. Si/Ge hetero-structure nanotube tunnel field effect transistor

    Science.gov (United States)

    Hanna, A. N.; Hussain, M. M.

    2015-01-01

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd = 1 V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60 mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5 V.

  4. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  5. Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

    KAUST Repository

    Chen, Hu

    2017-07-19

    The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.

  6. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.

    2015-01-07

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  7. Producing of pover GaAs structures of bipolar and field-effect transistor by CVD-method

    Directory of Open Access Journals (Sweden)

    Voronin V. A.

    2010-03-01

    Full Text Available Investigation results in technology of doping Sn and Bi of perfect GaAs structures preparation by the lowe-temperature isothermal chloride epitaxy method are presented. A complex problem has been solved to obtain planar layers of the n+–n–n0–p type bipolar transistors and planar layers of the i–n0–n–n+ type Schottky field-effect transistors. Heterogenetty in the thickness less than 3% and doping level less than 5% has been achieved. This allowed to get the discrete Schottky field-effect transistors with improved operation characteristics.

  8. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

    Science.gov (United States)

    Sirringhaus, Henning

    2014-01-01

    Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm2 V–1 s–1 have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. PMID:24443057

  9. Field-effect and capacitive properties of water-gated transistors based on polythiophene derivatives

    Directory of Open Access Journals (Sweden)

    R. Porrazzo

    2015-01-01

    Full Text Available Recently, water-gated organic field-effect transistors (WGOFET have been intensively studied for their application in the biological field. Surprisingly, a very limited number of conjugated polymers have been reported so far. Here, we systematically explore a series of polythiophene derivatives, presenting different alkyl side chains lengths and orientation, and characterized by various morphologies: comparative evaluation of their performances allows highlighting the critical role played by alkyl side chains, which significantly affects the polymer/water interface capacitance. Reported results provide useful guidelines towards further development of WGOFETs and represent a step forward in the understanding of the polymer/water interface phenomena.

  10. High Current Density InAsSb/GaSb Tunnel Field Effect Transistors

    OpenAIRE

    Dey, Anil; Borg, Mattias; Ganjipour, Bahram; Ek, Martin; Dick Thelander, Kimberly; Lind, Erik; Nilsson, Peter; Thelander, Claes; Wernersson, Lars-Erik

    2012-01-01

    Steep-slope devices, such as tunnel field-effect transistors (TFETs), have recently gained interest due to their potential for low power operation at room temperature. The devices are based on inter-band tunneling which could limit the on-current since the charge carriers must tunnel through a barrier to traverse the device. The InAs/GaSb heterostructure forms a broken type II band alignment which enables inter-band tunneling without a barrier, allowing high on-currents. We ha...

  11. Extended-gate organic field-effect transistor for the detection of histamine in water

    Science.gov (United States)

    Minamiki, Tsukuru; Minami, Tsuyoshi; Yokoyama, Daisuke; Fukuda, Kenjiro; Kumaki, Daisuke; Tokito, Shizuo

    2015-04-01

    As part of our ongoing research program to develop health care sensors based on organic field-effect transistor (OFET) devices, we have attempted to detect histamine using an extended-gate OFET. Histamine is found in spoiled or decayed fish, and causes foodborne illness known as scombroid food poisoning. The new OFET device possesses an extended gate functionalized by carboxyalkanethiol that can interact with histamine. As a result, we have succeeded in detecting histamine in water through a shift in OFET threshold voltage. This result indicates the potential utility of the designed OFET devices in food freshness sensing.

  12. Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors

    International Nuclear Information System (INIS)

    Appenzeller, J.; Martel, R.; Solomon, P.; Chan, K.; Avouris, Ph.; Knoch, J.; Benedict, J.; Tanner, M.; Thomas, S.; Wang, K. L.

    2000-01-01

    We present a scheme for the fabrication of ultrashort channel length metal-oxide-semiconductor field-effect transistors (MOSFETs) involving nanolithography and molecular-beam epitaxy. The active channel is undoped and is defined by a combination of nanometer-scale patterning and anisotropic etching of an n ++ layer grown on a silicon on insulator wafer. The method is self-limiting and can produce MOSFET devices with channel lengths of less than 10 nm. Measurements on the first batch of n-MOSFET devices fabricated with this approach show very good output characteristics and good control of short-channel effects. (c) 2000 American Institute of Physics

  13. High performance solution-processable tetrathienoacene (TTAR) based small molecules for organic field effect transistors (OFETs).

    Science.gov (United States)

    Vegiraju, Sureshraju; Huang, Deng-Yi; Priyanka, Pragya; Li, Yo-Shan; Luo, Xian-Lun; Hong, Shao-Huan; Ni, Jen-Shyang; Tung, Shih-Huang; Wang, Chien-Lung; Lien, Wei-Chieh; Yau, Shueh Lin; Liu, Cheng-Liang; Chen, Ming-Chou

    2017-05-30

    Three new organic semiconductors with alkyl chain-substituted tetrathienoacene (TTAR) as the central core and both ends capped with thiophene (DT-TTAR), thienothiophene (DTT-TTAR) and dithienothiophene (DDTT-TTAR) have been synthesized and characterized for organic field effect transistor (OFET) applications. A hole mobility of 0.81 cm 2 V -1 s -1 was achieved for the DDTT-TTAR film, which represents the highest mobility yet found for a solution-processable p-type TTAR-based small molecular semiconductors.

  14. Top-gate organic field-effect transistors fabricated on shape-memory polymer substrates

    Science.gov (United States)

    Choi, Sangmoo; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Wei, Andrew; Voit, Walter; Zhang, Yadong; Barlow, Stephen; Marder, Seth R.; Kippelen, Bernard

    2015-08-01

    We demonstrate top-gate organic field-effect transistors (OFETs) with a bilayer gate dielectric and doped contacts fabricated on shape-memory polymer (SMP) substrates. SMPs exhibit large variations in Young's modulus dependent on temperature and have the ability to fix two or more geometric configurations when a proper stimulus is applied. These unique properties make SMPs desirable for three-dimensional shape applications of OFETs. The electrical properties of OFETs on SMP substrates are presented and compared to those of OFETs on traditional glass substrates.

  15. 25th anniversary article: key points for high-mobility organic field-effect transistors.

    Science.gov (United States)

    Dong, Huanli; Fu, Xiaolong; Liu, Jie; Wang, Zongrui; Hu, Wenping

    2013-11-20

    Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Jiménez, David; Chaves, Ferney [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, 08193-Bellaterra (Spain); Cummings, Aron W.; Van Tuan, Dinh [ICN2, Institut Català de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Kotakoski, Jani [Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Wien (Austria); Department of Physics, University of Helsinki, P.O. Box 43, 00014 University of Helsinki (Finland); Roche, Stephan [ICN2, Institut Català de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

    2014-01-27

    We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.

  17. Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

    International Nuclear Information System (INIS)

    Jiménez, David; Chaves, Ferney; Cummings, Aron W.; Van Tuan, Dinh; Kotakoski, Jani; Roche, Stephan

    2014-01-01

    We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices

  18. An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

    Science.gov (United States)

    Liu, Ying; He, Jin; Chan, Mansun; Du, Cai-Xia; Ye, Yun; Zhao, Wei; Wu, Wen; Deng, Wan-Ling; Wang, Wen-Ping

    2014-09-01

    An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

  19. Integrated Materials Design of Organic Semiconductors for Field-Effect Transistors

    KAUST Repository

    Mei, Jianguo

    2013-05-08

    The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm2/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications. © 2013 American Chemical Society.

  20. Field-effect transistors based on self-organized molecular nanostripes

    DEFF Research Database (Denmark)

    Cavallini, M.; Stoliare, P.; Moulin, J.-F.

    2005-01-01

    Charge transport properties in organic semiconductors depend strongly on molecular order. Here we demonstrate field-effect transistors where drain current flows through a precisely defined array of nanostripes made of crystalline and highly ordered molecules. The molecular stripes are fabricated ...... by the menisci once the critical concentration is reached and self-organizes into molecularly ordered stripes 100-200 nm wide and a few monolayers high. The charge mobility measured along the stripes is 2 orders of magnitude larger than the values measured for spin-coated thin films....

  1. High temperature study of flexible silicon-on-insulator fin field-effect transistors

    KAUST Repository

    Diab, Amer El Hajj

    2014-09-29

    We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry\\'s most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

  2. Thienoacene-fused pentalenes: Syntheses, structures, physical properties and applications for organic field-effect transistors

    KAUST Repository

    Dai, Gaole

    2014-11-27

    Three soluble and stable thienoacene-fused pentalene derivatives (1-3) with different π-conjugation lengths were synthesized. X-ray crystallographic analysis and density functional theory (DFT) calculations revealed their unique geometric and electronic structures due to the interaction between the aromatic thienoacene units and antiaromatic pentalene moiety. As a result, they all possess a small energy gap and show amphoteric redox behaviour. Time dependent (TD) DFT calculations were used to explain their unique electronic absorption spectra. These new compounds exhibited good thermal stability and ordered packing in solid state and thus their applications in organic field-effect transistors (OFETs) were also investigated. The highest field-effect hole mobility of 0.016, 0.036 and 0.001 cm2 V-1 s-1 was achieved for solution-processed thin films of 1-3, respectively.

  3. Nature of electronic states in atomically thin MoS₂ field-effect transistors.

    Science.gov (United States)

    Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam

    2011-10-25

    We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states in all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below ∼30 K, the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.

  4. Dianthraceno[a,e]pentalenes: Synthesis, crystallographic structures and applications in organic field-effect transistors

    KAUST Repository

    Dai, Gaole

    2015-01-01

    Two soluble and stable dianthraceno[a,e]pentalenes with two (DAP1) and six (DAP2) phenyl substituents were synthesized. Both compounds possess a small energy band gap and show amphoteric redox behaviour due to intramolecular donor-accepter interactions. X-ray crystallographic analysis revealed that DAP2 has a closely packed structure with multi-dimensional [C-H⋯π] interactions although there are no π-π interactions between the dianthraceno[a,e]pentalene cores. As a result, solution-processed field effect transistors based on DAP2 exhibited an average hole mobility of 0.65 cm2 V-1 s-1. Under similar conditions, DAP1 showed an average field effect hole mobility of 0.001 cm2 V-1 s-1. This journal is

  5. Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.

    Science.gov (United States)

    Lee, Sungsik; Nathan, Arokia; Alexander-Webber, Jack; Braeuninger-Weimer, Philipp; Sagade, Abhay A; Lu, Haichang; Hasko, David; Robertson, John; Hofmann, Stephan

    2018-03-21

    A positive shift in the Dirac point in graphene field-effect transistors was observed with Hall-effect measurements coupled with Kelvin-probe measurements at room temperature. This shift can be explained by the asymmetrical behavior of the contact resistance by virtue of the electron injection barrier at the source contact. As an outcome, an intrinsic resistance is given to allow a retrieval of an intrinsic carrier mobility found to be decreased with increasing gate bias, suggesting the dominance of short-range scattering in a single-layer graphene field-effect transistor. These results analytically correlate the field-effect parameters with intrinsic graphene properties.

  6. Energetic mapping of oxide traps in MoS2 field-effect transistors

    Science.gov (United States)

    Illarionov, Yury Yu; Knobloch, Theresia; Waltl, Michael; Rzepa, Gerhard; Pospischil, Andreas; Polyushkin, Dmitry K.; Furchi, Marco M.; Mueller, Thomas; Grasser, Tibor

    2017-06-01

    The performance of MoS2 transistors is strongly affected by charge trapping in oxide traps with very broad distributions of time constants. These defects degrade the mobility and additionally lead to the hysteresis of the gate transfer characteristics, which presents a crucial performance and reliability issue for these new technologies. Here we perform a detailed study of the hysteresis in double-gated MoS2 FETs and show that this issue is nothing else than a combination of threshold voltage shifts resulting from positive and negative bias-temperature instabilities. While these instabilities are well known from silicon devices, they are even more important in 2D devices given the considerably larger defect densities. Most importantly, the magnitudes of these threshold voltage shifts depend strongly on the density and energetic alignment of the active oxide traps. Based on this, we introduce the incremental hysteresis sweep method which allows for an accurate mapping of these defects and extract their energy distributions from simulations. By applying our method to analyze the impact of oxide traps situated in the Al2O3 top gate of several devices, we confirm its versatility. Since all 2D devices investigated so far suffer from a similar hysteresis behavior, the incremental hysteresis sweep method provides a unique and powerful way for the detailed characterization of their defect bands.

  7. 3D assembly of carbon nanotubes for fabrication of field-effect transistors through nanomanipulation and electron-beam-induced deposition

    Science.gov (United States)

    Yu, Ning; Shi, Qing; Nakajima, Masahiro; Wang, Huaping; Yang, Zhan; Sun, Lining; Huang, Qiang; Fukuda, Toshio

    2017-10-01

    Three-dimensional carbon nanotube field-effect transistors (3D CNTFETs) possess predictable characteristics that rival those of planar CNTFETs and Si-based MOSFETs. However, due to the lack of a reliable assembly technology, they are rarely reported on, despite the amount of attention they receive. To address this problem, we propose the novel concept of a 3D CNTFET and develop its assembly strategy based on nanomanipulation and the electron-beam-induced deposition (EBID) technique inside a scanning electron microscope (SEM). In particular, the electrodes in our transistor design are three metallic cuboids of the same size, and their front, top and back surfaces are all wrapped up in CNTs. The assembly strategy is employed to build the structure through a repeated basic process of pick-up, placement, fixing and cutting of CNTs. The pick-up and placement is performed through one nanomanipulator with four degrees of freedom. Fixing is carried out through the EBID technique so as to improve the mechanical and electrical characteristics of the CNT/electrodes connection. CNT cutting is undertaken using the typical method of electrical breakdown. Experimental results showed that two CNTs were successfully assembled on the front sides of the cubic electrodes. This validates our assembly method for the 3D CNTFET. Also, when contact resistance was measured, tens of kilohms of resistance was observed at the CNT-EBID deposition-FET electrodes junction.. This manifests the electrical reliability of our assembly strategy.

  8. Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics.

    Science.gov (United States)

    Marconcini, Paolo; Cresti, Alessandro; Triozon, François; Fiori, Gianluca; Biel, Blanca; Niquet, Yann-Michel; Macucci, Massimo; Roche, Stephan

    2012-09-25

    We report fully quantum simulations of realistic models of boron-doped graphene-based field-effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated boron-doped graphene nanoribbon. Using a 3D Poisson/Schrödinger solver within the non-equilibrium Green's function (NEGF) formalism, self-consistent calculations of the gate-screened scattering potentials induced by the boron impurities have been performed, allowing the theoretical exploration of the tunability of transistor characteristics. The boron-doped graphene transistors are found to approach unipolar behavior as the boron concentration is increased and, by tuning the density of chemical dopants, the electron-hole transport asymmetry can be finely adjusted. Correspondingly, the onset of a mobility gap in the device is observed. Although the computed asymmetries are not sufficient to warrant proper device operation, our results represent an initial step in the direction of improved transfer characteristics and, in particular, the developed simulation strategy is a powerful new tool for modeling doped graphene nanostructures.

  9. Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor.

    Science.gov (United States)

    Gonzalez-Zalba, M Fernando; Shevchenko, Sergey N; Barraud, Sylvain; Johansson, J Robert; Ferguson, Andrew J; Nori, Franco; Betz, Andreas C

    2016-03-09

    Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunneling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio frequency resonant circuit coupled via the gate. Differential capacitance changes at the interdot charge transitions allow us to monitor the state of the system in the strong-driving regime where we observe the emergence of Landau-Zener-Stückelberg-Majorana interference on the phase response of the resonator. A theoretical analysis of the dispersive signal demonstrates that quantum and tunneling capacitance changes must be included to describe the qubit-resonator interaction. Furthermore, a Fourier analysis of the interference pattern reveals a charge coherence time, T2 ≈ 100 ps. Our results demonstrate charge coherent control and readout in a simple silicon transistor and open up the possibility to implement charge and spin qubits in existing CMOS technology.

  10. Memristive device based on a depletion-type SONOS field effect transistor

    Science.gov (United States)

    Himmel, N.; Ziegler, M.; Mähne, H.; Thiem, S.; Winterfeld, H.; Kohlstedt, H.

    2017-06-01

    State-of-the-art SONOS (silicon-oxide-nitride-oxide-polysilicon) field effect transistors were operated in a memristive switching mode. The circuit design is a variation of the MemFlash concept and the particular properties of depletion type SONOS-transistors were taken into account. The transistor was externally wired with a resistively shunted pn-diode. Experimental current-voltage curves show analog bipolar switching characteristics within a bias voltage range of ±10 V, exhibiting a pronounced asymmetric hysteresis loop. The experimental data are confirmed by SPICE simulations. The underlying memristive mechanism is purely electronic, which eliminates an initial forming step of the as-fabricated cells. This fact, together with reasonable design flexibility, in particular to adjust the maximum R ON/R OFF ratio, makes these cells attractive for neuromorphic applications. The relative large set and reset voltage around ±10 V might be decreased by using thinner gate-oxides. The all-electric operation principle, in combination with an established silicon manufacturing process of SONOS devices at the Semiconductor Foundry X-FAB, promise reliable operation, low parameter spread and high integration density.

  11. Regulating charge injection in ambipolar organic field-effect transistors by mixed self-assembled monolayers.

    Science.gov (United States)

    Xu, Yong; Baeg, Kang-Jun; Park, Won-Tae; Cho, Ara; Choi, Eun-Young; Noh, Yong-Young

    2014-08-27

    We report on a technique using mixed self-assembled monolayers (SAMs) to finely regulate ambipolar charge injection in polymer organic field-effect transistors. Differing from the other works that employ single SAM specifically for efficient charge injection in p-type and n-type transistors, we blend two different SAMs of alkyl- and perfluoroalkyl thiols at different ratios and apply them to ambipolar OFETs and inverter. Thanks to the utilization of ambipolar semiconductor and one SAM mixture, the device and circuit fabrications are facile with only one step for semiconductor deposition and another for SAM treatment. This is much simpler with respect to the conventional scheme for the unipolar-device-based complementary circuitry that demands separate deposition and processing for individual p-channel and n-channel transistors. Our results show that the mixed-SAM treatments not only improve ambipolar charge injection manifesting as higher hole- and electron-mobility and smaller threshold voltage but also gradually tune the device characteristics to reach a desired condition for circuit application. Therefore, this simple but useful approach is promising for ambipolar electronics.

  12. 3D NANOTUBE FIELD EFFECT TRANSISTORS FOR HYBRID HIGH-PERFORMANCE AND LOW-POWER OPERATION WITH HIGH CHIP-AREA EFFICIENCY

    KAUST Repository

    Fahad, Hossain M.

    2014-03-01

    scaling on silicon, the amount of current generated per device has to be increased while keeping short channel effects and off-state leakage at bay. The objective of this doctoral thesis is the investigation of an innovative vertical silicon based architecture called the silicon nanotube field effect transistor (Si NTFET). This topology incorporates a dual inner/outer core/shell gate stack strategy to control the volume inversion properties in a hollow silicon 1D quasi-nanotube under a tight electrostatic configuration. Together with vertically aligned source and drain, the Si NTFET is capable of very high on-state performance (drive current) in an area-efficient configuration as opposed to arrays of gate-all-around nanowires, while maintaining leakage characteristics similar to a single nanowire. Such a device architecture offsets the need of device arraying that is needed with fin and nanowire architectures. Extensive simulations are used to validate the potential benefits of Si NTFETs over GAA NWFETs on a variety of platforms such as conventional MOSFETs, tunnel FETs, junction-less FETs. This thesis demonstrates a novel CMOS compatible process flow to fabricate vertical nanotube transistors that offer a variety of advantages such as lithography-independent gate length definition, integration of epitaxially grown silicon nanotubes with spacer based gate dielectrics and abrupt in-situ doped source/drain junctions. Experimental measurement data will showcase the various materials and processing challenges in fabricating these devices. Finally, an extension of this work to topologically transformed wavy channel FinFETs is also demonstrated keeping in line with the theme of area efficient high-performance electronics.

  13. Biosensors based on enzyme field-effect transistors for determination of some substrates and inhibitors.

    Science.gov (United States)

    Dzyadevych, Sergei V; Soldatkin, Alexey P; Korpan, Yaroslav I; Arkhypova, Valentyna N; El'skaya, Anna V; Chovelon, Jean-Marc; Martelet, Claude; Jaffrezic-Renault, Nicole

    2003-10-01

    This paper is a review of the authors' publications concerning the development of biosensors based on enzyme field-effect transistors (ENFETs) for direct substrates or inhibitors analysis. Such biosensors were designed by using immobilised enzymes and ion-selective field-effect transistors (ISFETs). Highly specific, sensitive, simple, fast and cheap determination of different substances renders them as promising tools in medicine, biotechnology, environmental control, agriculture and the food industry. The biosensors based on ENFETs and direct enzyme analysis for determination of concentrations of different substrates (glucose, urea, penicillin, formaldehyde, creatinine, etc.) have been developed and their laboratory prototypes were fabricated. Improvement of the analytical characteristics of such biosensors may be achieved by using a differential mode of measurement, working solutions with different buffer concentrations and specific agents, negatively or positively charged additional membranes, or genetically modified enzymes. These approaches allow one to decrease the effect of the buffer capacity influence on the sensor response in an aim to increase the sensitivity of the biosensors and to extend their dynamic ranges. Biosensors for the determination of concentrations of different toxic substances (organophosphorous pesticides, heavy metal ions, hypochlorite, glycoalkaloids, etc.) were designed on the basis of reversible and/or irreversible enzyme inhibition effect(s). The conception of an enzymatic multibiosensor for the determination of different toxic substances based on the enzyme inhibition effect is also described. We will discuss the respective advantages and disadvantages of biosensors based on the ENFETs developed and also demonstrate their practical application.

  14. Metal oxide-graphene field-effect transistor: interface trap density extraction model

    Directory of Open Access Journals (Sweden)

    Faraz Najam

    2016-09-01

    Full Text Available A simple to implement model is presented to extract interface trap density of graphene field effect transistors. The presence of interface trap states detrimentally affects the device drain current–gate voltage relationship Ids–Vgs. At the moment, there is no analytical method available to extract the interface trap distribution of metal-oxide-graphene field effect transistor (MOGFET devices. The model presented here extracts the interface trap distribution of MOGFET devices making use of available experimental capacitance–gate voltage Ctot–Vgs data and a basic set of equations used to define the device physics of MOGFET devices. The model was used to extract the interface trap distribution of 2 experimental devices. Device parameters calculated using the extracted interface trap distribution from the model, including surface potential, interface trap charge and interface trap capacitance compared very well with their respective experimental counterparts. The model enables accurate calculation of the surface potential affected by trap charge. Other models ignore the effect of trap charge and only calculate the ideal surface potential. Such ideal surface potential when used in a surface potential based drain current model will result in an inaccurate prediction of the drain current. Accurate calculation of surface potential that can later be used in drain current model is highlighted as a major advantage of the model.

  15. Charge transport behavior of benodithiophene-diketopyrrololpyrrole-based conjugated polymer in organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jin Kuen [Dept. of Chemistry, Hankuk University of Foreign Studies, Yongin (Korea, Republic of)

    2015-07-15

    Organic optoelectronic devices, such as light-emitting diodes, organic solar cells (OSCs), and organic field effect transistors (OFETs), have emerged due to the development of π-conjugated polymers. Because the delocalized π-framework can significantly reduce the energy gap between the highest-occupied molecular orbital (HOMO) and the lowest-unoccupied molecular orbital (LUMO), their intrinsic optoelectronic properties can be tunable with their conjugation length in terms of average molecular weights and their π-backbone structures. The new type of low bandgap conjugated polymer (P1) has been successively polymerized via a palladium- catalyzed Stille cross-coupling reaction with bis-ethylhexyl BDT and bis-n-decane DPP. With a linear alkyl chain in the DPP units, the intermolecular packing structure was thought to be enhanced by proving the UV–Vis and UPS spectra. In addition, the electronic properties of P1 via field-effect transistors well illustrate the typical p-type semiconducting property without showing the significant improvement by thermal annealing. From a broader perspective, this research indicates that a wider choice of linear alkyl chain length in DPP units and modification of the interface between dielectric and active layers should be sought to further optimize device performance. Hence, progressive works with the strategy presented in this report will be pursued to address the different challenges in attaining target OFET performances.

  16. A Water-Soluble Polythiophene for Organic Field-Effect Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Ming [ORNL; He, Youjun [ORNL; Hong, Kunlun [ORNL; Rouleau, Christopher M [ORNL; Geohegan, David B [ORNL; Xiao, Kai [ORNL

    2013-01-01

    Synthesis of a non-ionic, water-soluble poly(thiophene) (PT) derivative, poly(3-(2-(2-methoxyethoxy) ethoxy)ethoxy) methylthiophene) (P3TEGT) with a hydrophilic tri-ethylene glycol side group, is reported and thin films of the polymer suitable for organic field-effect transistors (OFETs) are characterized by combining analysis techniques that include UV-Vis absorption and fluorescence spectroscopy, x-ray diffraction, and atomic force microscopy. After thermal annealing, P3TEGT films exhibit a well-organized nanofibrillar lamellar nanostructure that originates from the strong - stacking of the thiophene backbones. P-type organic field-effect transistors (OFETs) with hole mobilities of 10-5 cm2V-1s-1 were fabricated from this water-soluble poly(thiophene) derivative, demonstrating the possibility that environmentally-friendly solvents may be promising alternatives for the low-cost, green solution-based organic electronic device manufacturing of OFETs, organic photovoltaics (OPVs), and biosensors.

  17. Optical and electrical properties of electrochemically doped organic field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Yumusak, Cigdem, E-mail: yumusak@yildiz.edu.tr [Department of Physics, Faculty of Arts and Sciences, Yildiz Technical University, Davutpasa Campus, Esenler, 34210 Istanbul (Turkey); Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University of Linz, A-4040 Linz (Austria); Abbas, Mamatimin; Sariciftci, Niyazi Serdar [Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University of Linz, A-4040 Linz (Austria)

    2013-02-15

    Mixed ionic/electronic conduction in conducting polymers introduces new physics/chemistry and an additional functionality in organic optoelectronic devices. The incorporation of an ionic species in a conjugated polymer matrix results in the increase in electrical conductivity associated with the electrochemical doping of the material. In recent years polymer light emitting electrochemical cells (LECs) have been demonstrated. In such electrochemical optoelectronic devices, mobile ions facilitate the efficient injection of electronic charge carriers creating 'in situ' doping regions near the electrodes and lead to efficient electroluminescence light emission. Here, we introduce the same concept of an LEC in the organic field effect transistors (OFETs). The presence of both electronic and ionic charge carriers in the active layers of OFETs brings high charge carrier mobility and light emission even using symmetric source and drain metal electrodes. - Highlights: Black-Right-Pointing-Pointer Light emission from an electrochemically doped organic field effect transistor. Black-Right-Pointing-Pointer High charge carrier mobility as high as 3 cm{sup 2} V{sup -1} s{sup -1}. Black-Right-Pointing-Pointer Light emission intensity can be controlled by the gate as well as drain voltages.

  18. Semiconducting thin films of fluorinated and unsubstituted phthalocyanines for applications in organic field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Brinkmann, Harry; Keil, Christopher; Schlettwein, Derck [Institute of Applied Physics, Justus-Liebig-University Giessen (Germany); Tsaryova, Olga; Woehrle, Dieter [Institute of Organic and Macromolecular Chemistry, University of Bremen (Germany)

    2010-07-01

    Perfluorinated phthalocyanines (F{sub 16}Pc) show n-type characteristics as active layers in organic field transistors while organic field transistors with unsubstituted phthalocyanines (Pc) exhibit p-type characteristics. The growth of F{sub 16}Pc and Pc films has been studied in OFETs on organic (polyimide, PMMA) and inorganic insulating layers (SiO{sub 2}) with different surface modifications (HMDS treatments). We report here about the dependence of the growth mode of the films and the field effect mobility on the used substrate for the copper complexes. The development of the electrical conduction was studied in-situ during film growth and the field effect mobility was determined for various film thicknesses in different regimes of the Stranski-Krastanov growth mechanism that led to the formation of ultrathin conductive layers in the monolayer range followed by reorganization towards island growth. Optical absorbance was measured in reflection or transmission in dependence of the used substrate to investigate details of the intermolecular coupling.

  19. Fabrication, electrical characterization and device simulation of vertical P3HT field-effect transistors

    Directory of Open Access Journals (Sweden)

    Bojian Xu

    2017-12-01

    Full Text Available Vertical organic field-effect transistors (VOFETs provide an advantage over lateral ones with respect to the possibility to conveniently reduce the channel length. This is beneficial for increasing both the cut-off frequency and current density in organic field-effect transistor devices. We prepared P3HT (poly[3-hexylthiophene-2,5-diyl] VOFETs with a surrounding gate electrode and gate dielectric around the vertical P3HT pillar junction. Measured output and transfer characteristics do not show a distinct gate effect, in contrast to device simulations. By introducing in the simulations an edge layer with a strongly reduced charge mobility, the gate effect is significantly reduced. We therefore propose that a damaged layer at the P3HT/dielectric interface could be the reason for the strong suppression of the gate effect. We also simulated how the gate effect depends on the device parameters. A smaller pillar diameter and a larger gate electrode-dielectric overlap both lead to better gate control. Our findings thus provide important design parameters for future VOFETs.

  20. Fabrication of ambipolar gate-all-around field-effect transistors using silicon nanobridge arrays

    Science.gov (United States)

    Oh, Jin Yong; Park, Jong-Tae; Islam, M. Saif

    2013-09-01

    Nanowire bridges have been almost dormant in a nanostructured device community due to the challenges in reproducible growth and device fabrication. In this work, we present simple methods for creating silicon nanobridge arrays with repeatability, and demonstrate integration of gate-all-around field-effect-transistors in the arrays. P-type silicon nanowires air-bridges were synthesized using gold nanoparticles via the VLS technique on the array of predefined silicon electrode-pairs, and then surrounding gates were formed on the suspended air-bridge nanowires. The nanowire air-bridge field-effect-transistors with the surrounding gate exhibited p-type accumulation-mode characteristics with a subthreshold swing of 187 mV/dec and an on/off current ratio of 1.6×106. Despite the surrounding gate that helps gate biases govern the channel, off current substantially increased as drain bias increases. This ambipolar current-voltage property was attributable to gate-induced-drain-leakage at the overlap of gate and drain electrodes and trap-assisted tunneling at the nanowire and electrode connection.

  1. Strategies for Improving the Performance of Sensors Based on Organic Field-Effect Transistors.

    Science.gov (United States)

    Wu, Xiaohan; Mao, Shun; Chen, Junhong; Huang, Jia

    2018-01-29

    Organic semiconductors (OSCs) have been extensively studied as sensing channel materials in field-effect transistors due to their unique charge transport properties. Stimulation caused by its environmental conditions can readily change the charge-carrier density and mobility of OSCs. Organic field-effect transistors (OFETs) can act as both signal transducers and signal amplifiers, which greatly simplifies the device structure. Over the past decades, various sensors based on OFETs have been developed, including physical sensors, chemical sensors, biosensors, and integrated sensor arrays with advanced functionalities. However, the performance of OFET-based sensors still needs to be improved to meet the requirements from various practical applications, such as high sensitivity, high selectivity, and rapid response speed. Tailoring molecular structures and micro/nanofilm structures of OSCs is a vital strategy for achieving better sensing performance. Modification of the dielectric layer and the semiconductor/dielectric interface is another approach for improving the sensor performance. Moreover, advanced sensory functionalities have been achieved by developing integrated device arrays. Here, a brief review of strategies used for improving the performance of OFET sensors is presented, which is expected to inspire and provide guidance for the design of future OFET sensors for various specific and practical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Temperature sensitivity analysis of polarity controlled electrostatically doped tunnel field-effect transistor

    Science.gov (United States)

    Nigam, Kaushal; Pandey, Sunil; Kondekar, P. N.; Sharma, Dheeraj

    2016-09-01

    The conventional tunnel field-effect transistors (TFETs) have shown potential to scale down in sub-22 nm regime due to its lower sub-threshold slope and robustness against short-channel effects (SCEs), however, sensitivity towards temperature variation is a major concern. Therefore, for the first time, we investigate temperature sensitivity analysis of a polarity controlled electrostatically doped tunnel field-effect transistor (ED-TFET). Different performance metrics and analog/RF figure-of-merits were considered and compared for both devices, and simulations were performed using Silvaco ATLAS device tool. We found that the variation in ON-state current in ED-TFET is almost temperature independent due to electrostatically doped mechanism, while, it increases in conventional TFET at higher temperature. Above room temperature, the variation in ION, IOFF, and SS sensitivity in ED-TFET are only 0.11%/K, 2.21%/K, and 0.63%/K, while, in conventional TFET the variations are 0.43%/K, 2.99%/K, and 0.71%/K, respectively. However, below room temperature, the variation in ED-TFET ION is 0.195%/K compared to 0.27%/K of conventional TFET. Moreover, it is analysed that the incomplete ionization effect in conventional TFET severely affects the drive current and the threshold voltage, while, ED-TFET remains unaffected. Hence, the proposed ED-TFET is less sensitive towards temperature variation and can be used for cryogenics as well as for high temperature applications.

  3. Diazaisoindigo bithiophene and terthiophene copolymers for application in field-effect transistors and solar cells

    KAUST Repository

    Yue, Wan

    2017-06-10

    Two donor–acceptor conjugated polymers with azaisoindigo as acceptor units and bithiophene and terthiophene as donor units have been synthesized by Stille polymerization. These two polymers have been successfully applied in field-effect transistors and polymer solar cells. By changing the donor component of the conjugated polymer backbone from bithiophene to terthiophene, the density of thiophene in the backbone is increased, manifesting as a decrease in both ionization potential and in electron affinity. Therefore, the charge transport in field-effect transistors switches from ambipolar to predominantly hole transport behavior. PAIIDTT exhibits hole mobility up to 0.40 cm2/Vs and electron mobility of 0.02 cm2/Vs, whereas PAIIDTTT exhibits hole mobility of 0.62 cm2/Vs. Polymer solar cells were fabricated based on these two polymers as donors with PC61BM and PC71BM as acceptor where PAIIDTT shows a modest efficiency of 2.57% with a very low energy loss of 0.55 eV, while PAIIDTTT shows a higher efficiency of 6.16% with a higher energy loss of 0.74 eV. Our results suggest that azaisoindgo is a useful building block for the development of efficient polymer solar cells with further improvement possibility by tuning the alternative units on the polymer backbone. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017

  4. Phenacyl-thiophene and quinone semiconductors designed for solution processability and air-stability in high mobility n-channel field-effect transistors.

    Science.gov (United States)

    Letizia, Joseph A; Cronin, Scott; Ortiz, Rocio Ponce; Facchetti, Antonio; Ratner, Mark A; Marks, Tobin J

    2010-02-08

    Electron-transporting organic semiconductors (n-channel) for field-effect transistors (FETs) that are processable in common organic solvents or exhibit air-stable operation are rare. This investigation addresses both these challenges through rational molecular design and computational predictions of n-channel FET air-stability. A series of seven phenacyl-thiophene-based materials are reported incorporating systematic variations in molecular structure and reduction potential. These compounds are as follows: 5,5'''-bis(perfluorophenylcarbonyl)-2,2':5',- 2'':5'',2'''-quaterthiophene (1), 5,5'''-bis(phenacyl)-2,2':5',2'': 5'',2'''-quaterthiophene (2), poly[5,5'''-(perfluorophenac-2-yl)-4',4''-dioctyl-2,2':5',2'':5'',2'''-quaterthiophene) (3), 5,5'''-bis(perfluorophenacyl)-4,4'''-dioctyl-2,2':5',2'':5'',2'''-quaterthiophene (4), 2,7-bis((5-perfluorophenacyl)thiophen-2-yl)-9,10-phenanthrenequinone (5), 2,7-bis[(5-phenacyl)thiophen-2-yl]-9,10-phenanthrenequinone (6), and 2,7-bis(thiophen-2-yl)-9,10-phenanthrenequinone, (7). Optical and electrochemical data reveal that phenacyl functionalization significantly depresses the LUMO energies, and introduction of the quinone fragment results in even greater LUMO stabilization. FET measurements reveal that the films of materials 1, 3, 5, and 6 exhibit n-channel activity. Notably, oligomer 1 exhibits one of the highest mu(e) (up to approximately = 0.3 cm(2) V(-1) s(-1)) values reported to date for a solution-cast organic semiconductor; one of the first n-channel polymers, 3, exhibits mu(e) approximately = 10(-6) cm(2) V(-1) s(-1) in spin-cast films (mu(e)=0.02 cm(2) V(-1) s(-1) for drop-cast 1:3 blend films); and rare air-stable n-channel material 5 exhibits n-channel FET operation with mu(e)=0.015 cm(2) V(-1) s(-1), while maintaining a large I(on:off)=10(6) for a period greater than one year in air. The crystal structures of 1 and 2 reveal close herringbone interplanar pi-stacking distances (3.50 and 3.43 A, respectively

  5. Precision X-ray Measurement of the Position Sensitivity of Graphene Field Effect Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Cazalas, Edward [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA. (United States); Sarker, Biddut K. [Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, IN. (United States); Moore, Michael [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park (United States); Childres, Isaac [Department of Physics, Purdue University, West Lafayette, IN (United States); Chen, Yong P. [Department of Physics, Department of Electrical and Computer Engineering, and Birck Nanotechnology Center, Purdue University, West Lafayette, IN (United States); Jovanovic, Igor [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA. (United States)

    2015-07-01

    We have been exploring the graphene field-effect transistor (GFET) as a platform for detection of ionizing radiation, whereby the detection is achieved indirectly by use of the field effect in graphene, which is induced by the generation and transport of ionized charge carriers in the underlying undoped semiconductor substrate. An important characteristic of such a detector is scalability to large areas. Previous experimental studies suggest that the effective area significantly exceeds the size of graphene for field effect-based architectures, and this is also predicted from the operational principle of these devices. We describe the results of the experimental studies of GFETs on silicon carbide (SiC) substrates by use a microbeam Xray facility, provided by the Advanced Photon Source at Argonne National Laboratory. The results confirm that the effective area of the GFET is significantly larger than that of graphene with response measured at distances as large as 1000 μm from 10-μm size graphene. A simple transport model has been developed and is used to explain the spatial dependence of the GFET response. (authors)

  6. A review of selected topics in physics based modeling for tunnel field-effect transistors

    Science.gov (United States)

    Esseni, David; Pala, Marco; Palestri, Pierpaolo; Alper, Cem; Rollo, Tommaso

    2017-08-01

    The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrödinger equation problems. We will then address models that solve the open-boundary Schrödinger equation problem, based either on the non-equilibrium Green’s function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

  7. Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

    Directory of Open Access Journals (Sweden)

    M. H. Lee

    2014-10-01

    Full Text Available Using a ferroelectric PbZrTiO3 gate stack, the range of the steep subthreshold swing in tunnel field-effect transistors was extended by 3.5 orders of magnitude demonstrating an improvement in the swing (by approximately double the slope. The drain conductance (gd shows only 16% enhancement with large V DS (∼−1.5V indicates internal voltage amplification with ferroelectric negative capacitance effect beneficial to small lateral drain-source bias voltages (−0.1 V. The concept of coupling the ferroelectric polarization is proposed. The power consumption is also discussed in low-power applications of steep subthreshold slope devices.

  8. Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires.

    Science.gov (United States)

    Ganjipour, Bahram; Wallentin, Jesper; Borgström, Magnus T; Samuelson, Lars; Thelander, Claes

    2012-04-24

    We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.

  9. Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor

    Science.gov (United States)

    Ciccarelli, C.; Park, B. G.; Ogawa, S.; Ferguson, A. J.; Wunderlich, J.

    2010-08-01

    We present a study of the magnetoresistance (MR) of a Si metal-oxide-semiconductor field-effect-transistor (MOSFET) at the break-down regime when a magnetic field is applied perpendicular to the plane of the device. We have identified two different regimes where we observe a large and gate-voltage dependent MR. We suggest two different mechanisms which can explain the observed high MR. Moreover, we have studied how the MR of the MOSFET scales with the dimensions of the channel for gate voltages below the threshold. We observed a decrease in the MR by two orders of magnitude by reducing the dimensions of the channel from 50×280 μm2 to 5×5 μm2.

  10. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    Science.gov (United States)

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  11. Auger generation as an intrinsic limit to tunneling field-effect transistor performance

    Energy Technology Data Exchange (ETDEWEB)

    Teherani, James T., E-mail: j.teherani@columbia.edu [Department of Electrical Engineering, Columbia University, New York, New York 10027 (United States); Agarwal, Sapan [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Chern, Winston; Antoniadis, Dimitri A. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Solomon, Paul M. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Yablonovitch, Eli [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)

    2016-08-28

    Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, we show that Auger generation imposes a fundamental limit on ultimate TFET performance.

  12. Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

    Science.gov (United States)

    Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

    2018-02-01

    The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10‑2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

  13. Optical and electrical properties of electrochemically doped organic field effect transistors

    Science.gov (United States)

    Yumusak, Cigdem; Abbas, Mamatimin; Sariciftci, Niyazi Serdar

    2013-01-01

    Mixed ionic/electronic conduction in conducting polymers introduces new physics/chemistry and an additional functionality in organic optoelectronic devices. The incorporation of an ionic species in a conjugated polymer matrix results in the increase in electrical conductivity associated with the electrochemical doping of the material. In recent years polymer light emitting electrochemical cells (LECs) have been demonstrated. In such electrochemical optoelectronic devices, mobile ions facilitate the efficient injection of electronic charge carriers creating “in situ” doping regions near the electrodes and lead to efficient electroluminescence light emission. Here, we introduce the same concept of an LEC in the organic field effect transistors (OFETs). The presence of both electronic and ionic charge carriers in the active layers of OFETs brings high charge carrier mobility and light emission even using symmetric source and drain metal electrodes. PMID:23482672

  14. Current-voltage characteristics in organic field-effect transistors. Effect of interface dipoles

    Science.gov (United States)

    Sworakowski, Juliusz

    2015-07-01

    The role of polar molecules present at dielectric/semiconductor interfaces of organic field-effect transistors (OFETs) has been assessed employing the electrostatic model put forward in a recently published paper (Sworakowski et al., 2014). The interface dipoles create dipolar traps in the surface region of the semiconductor, their depths decreasing with the distance from the interface. This feature results in appearance of mobility gradients in the direction perpendicular to the dielectric/semiconductor interface, manifesting themselves in modification of the shapes of current-voltage characteristics. The effect may account for differences in carrier mobilities determined from the same experimental data using methods scanning different ranges of channel thicknesses (e.g., transconductances vs. transfer characteristics), differences between turn-on voltages and threshold voltages, and gate voltage dependence of mobility.

  15. Photopatternable Conducting Polymer Nanocomposite with Incorporated Gold Nanoparticles for Use in Organic Field Effect Transistors

    Energy Technology Data Exchange (ETDEWEB)

    Huh, Sung; Choi, Hyun Ho; Cho, Kil Won; Kim, Seung Bin [Pohang University of Science and Technology, Pohang (Korea, Republic of)

    2012-04-15

    We investigated a new method for patterning organic field-effect transistors (OFETs) using a photopatternable conducting polymer nanocomposite, consisting of poly(3-hexylthiophene) (P3HT)-coated gold nanoparticles (AuNPs) that had been modified with a photoreactive cinnamate group, to form P3HT-AuNP-CI. We found that the addition of the cinnamate group to the nanoparticle surface assisted the preparation of a solvent resistive semiconducting film and preserved the P3HT ordering, which was interrupted by Au-P3HT interactions, as well as provided UV-controllable electrical properties. The P3HT-AuNPs-CI films could be microscale-patterned via a UV crosslinking photoreaction, represented as a promising photopatternable semiconductor material for use in advanced applications, with tunable electrical properties for fabrication of sub-micron and microscale electronic devices

  16. Organic semiconductors for solution-processable field-effect transistors (OFETs).

    Science.gov (United States)

    Allard, Sybille; Forster, Michael; Souharce, Benjamin; Thiem, Heiko; Scherf, Ullrich

    2008-01-01

    The cost-effective production of flexible electronic components will profit considerably from the development of solution-processable, organic semiconductor materials. Particular attention is focused on soluble semiconductors for organic field-effect transistors (OFETs). The hitherto differentiation between "small molecules" and polymeric materials no longer plays a role, rather more the ability to process materials from solution to homogeneous semiconducting films with optimal electronic properties (high charge-carrier mobility, low threshold voltage, high on/off ratio) is pivotal. Key classes of materials for this purpose are soluble oligoacenes, soluble oligo- and polythiophenes and their respective copolymers, and oligo- and polytriarylamines. In this context, micro- or nanocrystalline materials have the general advantage of somewhat higher charge-carrier mobilities, which, however, could be offset in the case of amorphous, glassy materials by simpler and more reproducible processing.

  17. Hysteresis mechanism and control in pentacene organic field-effect transistors with polymer dielectric

    Directory of Open Access Journals (Sweden)

    Wei Huang

    2013-05-01

    Full Text Available Hysteresis mechanism of pentacene organic field-effect transistors (OFETs with polyvinyl alcohol (PVA and/or polymethyl methacrylate (PMMA dielectrics is studied. Through analyzing the electrical characteristics of OFETs with various PVA/PMMA arrangements, it shows that charge, which is trapped in PVA bulk and at the interface of pentacene/PVA, is one of the origins of hysteresis. The results also show that memory window is proportional to both trap amount in PVA and charge density at the gate/PVA or PVA/pentacene interfaces. Hence, the controllable memory window of around 0 ∼ 10 V can be realized by controlling the thickness and combination of triple-layer polymer dielectrics.

  18. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

    2016-01-01

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project....... The presented research is based on this sensor structure and investigates its potential as a versatile biomarker detection platform by evaluating different functionalization approaches. The functionalization of the silicon sensor surface with organic molecules was investigated in detail to determine...... the suitability of different methods for the preparation of organic interfaces for protein attachment. Oxide-free silicon surfaces offer unique possibilities to create highly sensitive sensor surfaces for charge detection due to the lack of an insulating oxide layer, but the highly reactive surface presents...

  19. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project....... The presented research is based on this sensor structure and investigates its potential as a versatile biomarker detection platform by evaluating different functionalization approaches. The functionalization of the silicon sensor surface with organic molecules was investigated in detail to determine...... the suitability of different methods for the preparation of organic interfaces for protein attachment. Oxide-free silicon surfaces offer unique possibilities to create highly sensitive sensor surfaces for charge detection due to the lack of an insulating oxide layer, but the highly reactive surface presents...

  20. Vinyl Flanked Difluorobenzothiadiazole-Dithiophene Conjugated Polymer for High Performance Organic Field-Effect Transistors.

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Xianfeng; Sun, Wandong; Chen, Yanlin; Tan, Luxi; Cai, Zheng-Xu; Liu, Zitong; Wang, Lin; Li, Jing; Chen, Wei; Dong, Lichun

    2018-02-21

    Fluorine containing conjugated polymers have been widely applied in high performance organic solar cells, but their use in field-effect transistors is still quite limited. In this work, a conjugated polymer PTFBTV based on difluorobenzothiadiazole (DFBT) and dithiophene was synthesized, utilizing multiple vinylene as linkers. The polymer exhibits a relatively high hole mobility up to 2.0 cm(2) V-1 s(-1) compared with the reported DFBT-oligothiophene based polymers, yet its structural complexity is much simpler. The polymer thin film exhibits a typical 'face on' molecular orientation. A single crystal of its monomer revealed a non-covalent intramolecular contact between fluorine and the neighbouring proton, which strengthens the backbone co-planarity. Meanwhile an intermolecular F...F contact was also observed, which might cause rather scattered lamellar crystallinity for PTFBTV in the solid state.

  1. Photopatternable Conducting Polymer Nanocomposite with Incorporated Gold Nanoparticles for Use in Organic Field Effect Transistors

    International Nuclear Information System (INIS)

    Huh, Sung; Choi, Hyun Ho; Cho, Kil Won; Kim, Seung Bin

    2012-01-01

    We investigated a new method for patterning organic field-effect transistors (OFETs) using a photopatternable conducting polymer nanocomposite, consisting of poly(3-hexylthiophene) (P3HT)-coated gold nanoparticles (AuNPs) that had been modified with a photoreactive cinnamate group, to form P3HT-AuNP-CI. We found that the addition of the cinnamate group to the nanoparticle surface assisted the preparation of a solvent resistive semiconducting film and preserved the P3HT ordering, which was interrupted by Au-P3HT interactions, as well as provided UV-controllable electrical properties. The P3HT-AuNPs-CI films could be microscale-patterned via a UV crosslinking photoreaction, represented as a promising photopatternable semiconductor material for use in advanced applications, with tunable electrical properties for fabrication of sub-micron and microscale electronic devices

  2. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.

    Science.gov (United States)

    Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; van Bentum, Ralf; Mikolajick, Thomas; Slesazeck, Stefan

    2017-02-01

    The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices. Although both experimental and theoretical studies on this new ferroelectric system have been undertaken, much remains to be unveiled regarding its domain landscape and switching kinetics. Here we demonstrate that the switching of single domains can be directly observed in ultrascaled ferroelectric field effect transistors. Using models of ferroelectric domain nucleation we explain the time, field and temperature dependence of polarization reversal. A simple stochastic model is proposed as well, relating nucleation processes to the observed statistical switching behavior. Our results suggest novel opportunities for hafnium oxide based ferroelectrics in nonvolatile memory devices.

  3. Understanding the electrolyte background for biochemical sensing with ion-sensitive field-effect transistors.

    Science.gov (United States)

    Tarasov, Alexey; Wipf, Mathias; Stoop, Ralph L; Bedner, Kristine; Fu, Wangyang; Guzenko, Vitaliy A; Knopfmacher, Oren; Calame, Michel; Schönenberger, Christian

    2012-10-23

    Silicon nanowire field-effect transistors have attracted substantial interest for various biochemical sensing applications, yet there remains uncertainty concerning their response to changes in the supporting electrolyte concentration. In this study, we use silicon nanowires coated with highly pH-sensitive hafnium oxide (HfO(2)) and aluminum oxide (Al(2)O(3)) to determine their response to variations in KCl concentration at several constant pH values. We observe a nonlinear sensor response as a function of ionic strength, which is independent of the pH value. Our results suggest that the signal is caused by the adsorption of anions (Cl(-)) rather than cations (K(+)) on both oxide surfaces. By comparing the data to three well-established models, we have found that none of those can explain the present data set. Finally, we propose a new model which gives excellent quantitative agreement with the data.

  4. Threshold voltage roll-off modelling of bilayer graphene field-effect transistors

    International Nuclear Information System (INIS)

    Saeidmanesh, M; Ismail, Razali; Khaledian, M; Karimi, H; Akbari, E

    2013-01-01

    An analytical model is presented for threshold voltage roll-off of double gate bilayer graphene field-effect transistors. To this end, threshold voltage models of short- and long-channel states have been developed. In the short-channel case, front and back gate potential distributions have been modelled and used. In addition, the tunnelling probability is modelled and its effect is taken into consideration in the potential distribution model. To evaluate the accuracy of the potential model, FlexPDE software is employed with proper boundary conditions and a good agreement is observed. Using the proposed models, the effect of several structural parameters on the threshold voltage and its roll-off are studied at room temperature. (paper)

  5. Hole states in diamond p-delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Rodriguez-Vargas, I [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad Esquina con Paseo la Bufa S/N, CP 98060 Zacatecas, ZAC. (Mexico); Mora-Ramos, M E, E-mail: jcmover@correo.unam.m [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, CP 62209 Cuernavaca, MOR. (Mexico)

    2009-05-01

    The p-delta-doping in diamond allows to create high density two-dimensional hole gases. This technique has already been applied in the design and fabrication of diamond-based field effect transistors. Consequently, the knowledge of the electronic structure is of significant importance to understand the transport properties of diamond p-delta-doped systems. In this work the hole subbands of diamond p-type delta-doped quantum wells are studied within the framework of a local-density Thomas-Fermi-based approach for the band bending profile. The calculation incorporates an independent three-hole-band scheme and considers the effects of the contact potential, the delta-channel to contact distance, and the ionized impurity density.

  6. Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model

    Energy Technology Data Exchange (ETDEWEB)

    Boscá, A., E-mail: alberto.bosca@upm.es [Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Dpto. de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Pedrós, J. [Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Campus de Excelencia Internacional, Campus Moncloa UCM-UPM, Madrid 28040 (Spain); Martínez, J. [Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Dpto. de Ciencia de Materiales, E.T.S.I de Caminos, Canales y Puertos, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Calle, F. [Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Dpto. de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, Madrid 28040 (Spain); Campus de Excelencia Internacional, Campus Moncloa UCM-UPM, Madrid 28040 (Spain)

    2015-01-28

    Due to its intrinsic high mobility, graphene has proved to be a suitable material for high-speed electronics, where graphene field-effect transistor (GFET) has shown excellent properties. In this work, we present a method for extracting relevant electrical parameters from GFET devices using a simple electrical characterization and a model fitting. With experimental data from the device output characteristics, the method allows to calculate parameters such as the mobility, the contact resistance, and the fixed charge. Differentiated electron and hole mobilities and direct connection with intrinsic material properties are some of the key aspects of this method. Moreover, the method output values can be correlated with several issues during key fabrication steps such as the graphene growth and transfer, the lithographic steps, or the metalization processes, providing a flexible tool for quality control in GFET fabrication, as well as a valuable feedback for improving the material-growth process.

  7. Exploration of conductance peak splitting in carbon nanotube field effect transistors at critical field strengths

    Science.gov (United States)

    Stephens, Jeffrey D.; Licini, Jerome C.; Johnson, A. T. Charlie; Strachan, Doug R.; Johnston, Danvers E.; Khamis, Sam

    2009-03-01

    Carbon nanotube field effect transistors were produced by chemical vapor deposition growth of nanotubes on oxidized silicon substrate. Samples were back gated on doped silicon and contacted with gold/chrome contacts. Conductance measurements were performed at low temperature and high magnetic field using a dilution refrigerator and a superconducting magnet. Data was taken at 0.5 Tesla increments from 0-11Tesla. The differential conductance (dI/dV) shows an interesting asymmetry with bias voltage as well as a near zero bias conductance peak. The near zero bias conductance peak demonstrates splitting at two critical magnetic field strengths on the 0.5T scale. These two critical regimes are further explored on a finer magnetic field scale.

  8. Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

    Science.gov (United States)

    Nilsson, Henrik A.; Caroff, Philippe; Lind, Erik; Pistol, Mats-Erik; Thelander, Claes; Wernersson, Lars-Erik

    2011-09-01

    We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgap InSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction.

  9. Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors

    Science.gov (United States)

    Ueda, Akiko; Luisier, Mathieu; Sano, Nobuyuki

    2015-12-01

    We examine the transport properties of heavily doped ultra-scaled Si junctionless nanowire field-effect transistors, by means of atomistic quantum transport simulations based on the s p 3 d 5 s ∗ tight-binding model, the nonequilibrium Green's function formalism, and including electron-phonon scattering. Each individual doping atom is treated explicitly and its potential is determined by solving the Poisson equation. The impurity atoms are assumed to be aligned along a single line or to slightly vary from this well-ordered configuration. We find that the impurity-limited mobility enhances as the carrier concentration increases due to the screening effect. The mobility also improves with the doping concentration because closely placed impurities induce resonant tunneling states that positively affect the current magnitude. This behavior is found to persist even in the case of slight disorder.

  10. Graphene field-effect transistors as room-temperature terahertz detectors

    Science.gov (United States)

    Vicarelli, L.; Vitiello, M. S.; Coquillat, D.; Lombardo, A.; Ferrari, A. C.; Knap, W.; Polini, M.; Pellegrini, V.; Tredicucci, A.

    2012-10-01

    The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples.

  11. Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors

    Science.gov (United States)

    Hur, Ji-Hyun; Kim, Deok-Kee

    2018-05-01

    In this paper, we theoretically investigate the highest possible expected performance for graphene nanoribbon field effect transistors (GNRFETs) for a wide range of operation voltages and device structure parameters, such as the width of the graphene nanoribbon and gate length. We formulated a self-consistent, non-equilibrium Green’s function method in conjunction with the Poisson equation and modeled the operation of nanometer sized GNRFETs, of which GNR channels have finite bandgaps so that the GNRFET can operate as a switch. We propose a metric for competing with the current silicon CMOS high performance or low power devices and explain that this can vary greatly depending on the GNRFET structure parameters.

  12. Detection of influenza A virus using carbon nanotubes field effect transistor based DNA sensor

    Science.gov (United States)

    Tran, Thi Luyen; Nguyen, Thi Thuy; Huyen Tran, Thi Thu; Chu, Van Tuan; Thinh Tran, Quang; Tuan Mai, Anh

    2017-09-01

    The carbon nanotubes field effect transistor (CNTFET) based DNA sensor was developed, in this paper, for detection of influenza A virus DNA. Number of factors that influence the output signal and analytical results were investigated. The initial probe DNA, decides the available DNA strands on CNTs, was 10 μM. The hybridization time for defined single helix was 120 min. The hybridization temperature was set at 30 °C to get a net change in drain current of the DNA sensor without altering properties of any biological compounds. The response time of the DNA sensor was less than one minute with a high reproducibility. In addition, the DNA sensor has a wide linear detection range from 1 pM to 10 nM, and a very low detection limit of 1 pM. Finally, after 7-month storage in 7.4 pH buffer, the output signal of DNA sensor recovered 97%.

  13. Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

    Science.gov (United States)

    Seema; Chauhan, Sudakar Singh

    2018-05-01

    In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

  14. Optimal design of an electret microphone metal-oxide-semiconductor field-effect transistor preamplifier.

    Science.gov (United States)

    van der Donk, A G; Bergveld, P

    1992-04-01

    A theoretical noise analysis of the combination of a capacitive microphone and a preamplifier containing a metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-value resistive bias element is given. It is found that the output signal-to-noise ratio for a source follower and for a common-source circuit is almost the same. It is also shown that the output noise can be reduced by making the microphone capacitance as well as the bias resistor as large as possible, and furthermore by keeping the parasitic gate capacitances as low as possible and finally by using an optimum value for the gate area of the MOSFET. The main noise source is the thermal noise of the gate leakage resistance of the MOSFET. It is also shown that short-channel MOSFETs produce more thermal channel noise than longer channel devices.

  15. A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport

    Science.gov (United States)

    Ghoreishi, Seyed Saleh; Yousefi, Reza; Saghafi, Kamyar; Aderang, Habib

    2017-08-01

    In this article, a detailed performance comparison is made between ballistic and dissipative quantum transport of metal oxide semicondutor-like graphene nanoribbon field-effect transistor, in ON and OFF-state conditions. By the self-consistent mode-space non-equilibrium Green's function approach, inter- and intraband scattering is accounted and the role of acoustic and optical phonon scattering on the performance of the devices is evaluated. We found that in this structure the dominant mechanism of scattering changes according to the ranges of voltage bias. Under large biasing conditions, the influence of optical phonon scattering becomes important. Also, the ambipolar and OFF-current are impressed by the phonon-assisted band-to-band tunneling and increased considerably compared to the ballistic conditions, although sub-threshold swing degrades due to optical phonon scattering.

  16. Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors

    Science.gov (United States)

    Cao, Jiang; Logoteta, Demetrio; Pala, Marco G.; Cresti, Alessandro

    2018-02-01

    We numerically investigate electron quantum transport in 2D van der Waals tunnel field-effect-transistors in the presence of lateral momentum mismatch induced by lattice mismatch or rotational misalignment between the two-dimensional layers. We show that a small momentum mismatch induces a threshold voltage shift without altering the subthreshold swing. On the contrary, a large momentum mismatch produces significant potential variations and ON-current reduction. Short-range scattering, such as that due to phonons or system edges, enables momentum variations, thus enhancing interlayer tunneling. The coupling of electrons with acoustic phonons is shown to increase the ON current without affecting the subthreshold swing. In the case of optical phonons, the ON-current increase is accompanied by a subthreshold swing degradation due to the inelastic nature of the scattering.

  17. Chemical oxidative and solid state synthesis of low molecular weight polymers for organic field effect transistors

    Science.gov (United States)

    Mahale, Rajashree Y.; Dharmapurikar, Satej S.; Chini, Mrinmoy Kumar

    2018-03-01

    Solution processability of the precursor molecules is a major issue owing to their limited solubility for the synthesis of conjugated polymers. Therefore, we favour the solvent free solid state chemical oxidative polymerization route for the synthesis of diketopyrrolopyrrole (DPP) based donor-acceptor (D-A) type conjugated polymers. D-A type polymer Poly(S-OD-EDOT) which contains DPP coupled with EDOT donor units is synthesized via solid state polymerization method. The polymer is employed as an active layer for organic field-effect transistors to measure charge transport properties. The Polymer shows good hole mobility 3.1 × 10-2 cm2 V-1 s-1, with a on/off ratio of 1.1 × 103.

  18. Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model

    International Nuclear Information System (INIS)

    Boscá, A.; Pedrós, J.; Martínez, J.; Calle, F.

    2015-01-01

    Due to its intrinsic high mobility, graphene has proved to be a suitable material for high-speed electronics, where graphene field-effect transistor (GFET) has shown excellent properties. In this work, we present a method for extracting relevant electrical parameters from GFET devices using a simple electrical characterization and a model fitting. With experimental data from the device output characteristics, the method allows to calculate parameters such as the mobility, the contact resistance, and the fixed charge. Differentiated electron and hole mobilities and direct connection with intrinsic material properties are some of the key aspects of this method. Moreover, the method output values can be correlated with several issues during key fabrication steps such as the graphene growth and transfer, the lithographic steps, or the metalization processes, providing a flexible tool for quality control in GFET fabrication, as well as a valuable feedback for improving the material-growth process

  19. Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

    Directory of Open Access Journals (Sweden)

    Keanchuan Lee

    2012-06-01

    Full Text Available A silver nanoparticles self-assembled monolayer (SAM was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I − V and impedance spectroscopy (IS measurements. The I − V results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state.

  20. InGaP/InGaAs field-effect transistor typed hydrogen sensor

    Science.gov (United States)

    Tsai, Jung-Hui; Liou, Syuan-Hao; Lin, Pao-Sheng; Chen, Yu-Chi

    2018-02-01

    In this article, the Pd-based mixture comprising silicon dioxide (SiO2) is applied as sensing material for the InGaP/InGaAs field-effect transistor typed hydrogen sensor. After wet selectively etching the SiO2, the mixture is turned into Pd nanoparticles on an interlayer. Experimental results depict that hydrogen atoms trapped inside the mixture could effectively decrease the gate barrier height and increase the drain current due to the improved sensing properties when Pd nanoparticles were formed by wet etching method. The sensitivity of the gate forward current from air (the reference) to 9800 ppm hydrogen/air environment approaches the high value of 1674. Thus, the studied device shows a good potential for hydrogen sensor and integrated circuit applications.

  1. Robust thresholdlike effect of internal noise on stochastic resonance in an organic field-effect transistor

    Science.gov (United States)

    Suzuki, Yoshiharu; Asakawa, Naoki

    2018-01-01

    The application of noise to a nonlinear system can have the effect of increasing the signal transmission of the system through the phenomenon of stochastic resonance (SR). This paper presents an analytical characterization of the dependence of the signal transmission performance of an organic field-effect transistor (OFET) on external noise. Similarly to the threshold of a nonlinear system, the additive internal noise of the system can be used to control the emergence of SR. Internal noise or the addition of random numbers to the system enables one to observe the SR phenomenon in an OFET under an intrinsically nonresonant condition. Internal noise plays a thresholdlike role, but it functions in a different manner. The fluctuations in performance due to external noise become smaller when the effect of internal noise becomes dominant compared with that of the threshold. In conclusion, it is found that internal noise plays a robust thresholdlike role with respect to variations in external noise intensity.

  2. Photojunction Field-Effect Transistor Based on a Colloidal Quantum Dot Absorber Channel Layer

    KAUST Repository

    Adinolfi, Valerio

    2015-01-27

    © 2015 American Chemical Society. The performance of photodetectors is judged via high responsivity, fast speed of response, and low background current. Many previously reported photodetectors based on size-tuned colloidal quantum dots (CQDs) have relied either on photodiodes, which, since they are primary photocarrier devices, lack gain; or photoconductors, which provide gain but at the expense of slow response (due to delayed charge carrier escape from sensitizing centers) and an inherent dark current vs responsivity trade-off. Here we report a photojunction field-effect transistor (photoJFET), which provides gain while breaking prior photoconductors\\' response/speed/dark current trade-off. This is achieved by ensuring that, in the dark, the channel is fully depleted due to a rectifying junction between a deep-work-function transparent conductive top contact (MoO3) and a moderately n-type CQD film (iodine treated PbS CQDs). We characterize the rectifying behavior of the junction and the linearity of the channel characteristics under illumination, and we observe a 10 μs rise time, a record for a gain-providing, low-dark-current CQD photodetector. We prove, using an analytical model validated using experimental measurements, that for a given response time the device provides a two-orders-of-magnitude improvement in photocurrent-to-dark-current ratio compared to photoconductors. The photoJFET, which relies on a junction gate-effect, enriches the growing family of CQD photosensitive transistors.

  3. Investigation of the dimensionality of charge transport in organic field effect transistors

    Science.gov (United States)

    Abdalla, Hassan; Fabiano, Simone; Kemerink, Martijn

    2017-02-01

    Ever since the first experimental investigations of organic field effect transistors (OFETs) the dimensionality of charge transport has alternately been described as two dimensional (2D) and three dimensional (3D). More recently, researchers have turned to an analytical analysis of the temperature-dependent transfer characteristics to classify the dimensionality as either 2D or 3D as well as to determine the disorder of the system, thereby greatly simplifying dimensionality investigations. We applied said analytical analysis to the experimental results of our OFETs comprising molecularly well-defined polymeric layers as the active material as well as to results obtained from kinetic Monte Carlo simulations and found that it was not able to correctly distinguish between 2D and 3D transports or give meaningful values for the disorder and should only be used for quasiquantitative and comparative analysis. We conclude to show that the dimensionality of charge transport in OFETs is a function of the interplay between transistor physics and morphology of the organic material.

  4. High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Chaure, Nandu B [Department of Physics, University of Pune, Ganeshkhind, Pune 411007 (India); Cammidge, Andrew N; Chambrier, Isabelle; Cook, Michael J [School of Chemistry, University of East Anglia, Norwich, NR4 7TJ (United Kingdom); Cain, Markys G; Murphy, Craig E [National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW (United Kingdom); Pal, Chandana; Ray, Asim K, E-mail: Asim.Ray@brunel.ac.uk [The Wolfson Centre for Materials Processing, Brunel University, Uxbridge, Middlesex UB8 3PH (United Kingdom)

    2011-03-15

    Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc{sub 6}) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO{sub 2}) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4x10{sup -2} cm{sup 2} V{sup -1} s{sup -1} and 10{sup 6} for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

  5. Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

    Science.gov (United States)

    Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

    2017-01-25

    We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

  6. Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

    International Nuclear Information System (INIS)

    Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo; Kim, Hwajeong; Lee, Joon-Hyung; Park, Soo-Young; Kang, Inn-Kyu

    2014-01-01

    We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4 ′ -pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm 2 /Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V D ) and gate (V G ) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V D and V G . The best voltage combination was V D = −0.2 V and V G = −1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors

  7. Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

    KAUST Repository

    Li, Jingqi

    2014-07-01

    A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

  8. Experimental apparatus for teaching electrostatic topics: the electroscope with field-effect transistor

    Directory of Open Access Journals (Sweden)

    Thiago Alves de Sá Muniz Sampaio

    2017-05-01

    Full Text Available Regular school labs lack experiments that can properly identify many of the phenomena present in the electrostatic study. This paper proposes the implementation of a new kind of simple experimental apparatus for teaching topics in this area of physics, consisting of an electroscope kind that uses the field-effect transistor for detecting electric charges coming from electrified bodies. An explanation is given on the principles that makes this type of transistor an effective device due to its high sensitivity to electrostatic fields, as well as an analysis of the usefulness of this project for viewing many peculiar phenomena, such as polarization and induction. Based on this, we propose some simple activities that can be done in the classroom to involve students in the initial subject of electrostatics. We expect that this form of teaching along with experimental and explanatory approach of the phenomena in the classroom can bring to students a better learning of these concepts, demonstrating the utility of experimentation on teaching electrostatics.

  9. Field Effect Transistors Based on Composite Films of Poly(4-vinylphenol) with ZnO Nanoparticles

    Science.gov (United States)

    Boughias, Ouiza; Belkaid, Mohammed Said; Zirmi, Rachid; Trigaud, Thierry; Ratier, Bernard; Ayoub, Nouh

    2018-01-01

    In order to adjust the characteristic of pentacene thin film transistor, we modified the dielectric properties of the gate insulator, poly(4-vinylphenol), or PVP. PVP is an organic polymer with a low dielectric constant, limiting the performance of organic thin film transistors (OTFTs). To increase the dielectric constant of PVP, a controlled amount of ZnO nanoparticles was homogeneously dispersed in a dielectric layer. The effect of the concentration of ZnO on the relative permittivity of PVP was measured using impedance spectroscopy and it has been demonstrated that the permittivity increases from 3.6 to 5.5 with no percolation phenomenon even at a concentration of 50 vol.%. The performance of OTFTs in terms of charge carrier mobility, threshold voltage and linkage current was evaluated. The results indicate a dramatic increase in both the field effect mobility and the linkage current by a factor of 10. It has been demonstrated that the threshold voltage can be adjusted. It shifts from 8 to 0 when the volume concentration of ZnO varied from 0 vol.% to 50 vol.%.

  10. High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Nandu B Chaure, Andrew N Cammidge, Isabelle Chambrier, Michael J Cook, Markys G Cain, Craig E Murphy, Chandana Pal and Asim K Ray

    2011-01-01

    Full Text Available Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl copper phthalocyanine (CuPc6 were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2 as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

  11. Electrostatic melting in a single-molecule field-effect transistor with applications in genomic identification

    Science.gov (United States)

    Vernick, Sefi; Trocchia, Scott M.; Warren, Steven B.; Young, Erik F.; Bouilly, Delphine; Gonzalez, Ruben L.; Nuckolls, Colin; Shepard, Kenneth L.

    2017-05-01

    The study of biomolecular interactions at the single-molecule level holds great potential for both basic science and biotechnology applications. Single-molecule studies often rely on fluorescence-based reporting, with signal levels limited by photon emission from single optical reporters. The point-functionalized carbon nanotube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative based on intrinsic molecular charge that offers significantly higher signal levels for detection. Such devices are effective for characterizing DNA hybridization kinetics and thermodynamics and enabling emerging applications in genomic identification. In this work, we show that hybridization kinetics can be directly controlled by electrostatic bias applied between the device and the surrounding electrolyte. We perform the first single-molecule experiments demonstrating the use of electrostatics to control molecular binding. Using bias as a proxy for temperature, we demonstrate the feasibility of detecting various concentrations of 20-nt target sequences from the Ebolavirus nucleoprotein gene in a constant-temperature environment.

  12. A method for direct contact resistance evaluation in low voltage coplanar organic field-effect transistors

    Science.gov (United States)

    Lai, S.; Cosseddu, P.; Bonfiglio, A.

    2017-04-01

    In this paper, a method for the extrapolation of contact resistance in organic field-effect transistors (OFETs) from a single transfer characteristic curve in the linear regime is proposed. The method, namely DIrect Contact Resistance Extrapolation (DICRE), is based on the idea of making the current dependent only on contact resistance by setting the device in large over-threshold conditions. Constant contact resistance with respect to gate-to-source voltage is considered as an acceptable approximation, as confirmed by other examples in the literature. The effectiveness of the method is demonstrated by extrapolating the contact resistance of two different OFET structures (self-aligned and not self-aligned) and comparing the results with standard reference techniques, namely the Modified Transmission Line Method (M-TLM) and the Y function method. The results demonstrate that the DICRE method can be applied to low voltage devices without any damage to the gate insulator, even if the applied gate-to-source voltage drop is well beyond the values normally employed for transistor operation. The proposed method allows extrapolating a value of contact resistance comparable with the ones derived by TLM, with restrained variability. Moreover, the capability of properly recognizing the differences in contact resistance values between OFET structures with different features in terms of source/drain-gate overlap is reported. Finally, the possibility of correctly deriving the contact resistance dependence on drain-to-source voltage using DICRE is discussed.

  13. Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2013-01-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been experimentally demonstrated (J. Li et al., Carbon, 2012, 50, 4628-4632). The source and drain contact heights in vertical CNTFETs could be much higher than in flat CNTFETs if the fabrication process is not optimized. To understand the impact of contact height on transistor performance, we use a semi-classical method to calculate the characteristics of CNTFETs with different contact heights. The results show that the drain current decreases with increasing contact height and saturates at a value governed by the thickness of the oxide. The current reduction caused by the increased contact height becomes more significant when the gate oxide is thicker. The higher the drain voltage, the larger the current reduction. It becomes even worse when the band gap of the carbon nanotube is larger. The current can differ by a factor of more than five between the CNTEFTs with low and high contact heights when the oxide thickness is 50 nm. In addition, the influence of the contact height is limited by the channel length. The contact height plays a minor role when the channel length is less than 100 nm. © 2013 The Royal Society of Chemistry.

  14. Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.

    Science.gov (United States)

    Wu, Di; Li, Xiao; Luan, Lan; Wu, Xiaoyu; Li, Wei; Yogeesh, Maruthi N; Ghosh, Rudresh; Chu, Zhaodong; Akinwande, Deji; Niu, Qian; Lai, Keji

    2016-08-02

    The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because of the imperfections, electrons moving on these 2D crystals experience a spatially nonuniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS2 flakes, which can be explained by our first-principles calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.

  15. MOBILITAS PEMBAWA MUATAN PADA OFET (ORGANIC FIELD EFFECT TRANSISTOR BERBASIS FILM TIPIS

    Directory of Open Access Journals (Sweden)

    Sujarwata -

    2014-06-01

    Full Text Available Abstrak __________________________________________________________________________________________ Tujuan penelitian ini adalah pembuatan dan karakterisasi pada OFET (Organic Field Effect Transistor berbasis film tipis dengan struktur bottom-contact. Pembuatan OFET dilakukan dengan cara pencucian substrat dengan etanol dalam ultrasonic cleaner, kemudian dilakukan deposisi elektroda source dan drain di atas substrat SiO2 dengan metode  penguapan hampa udara pada suhu ruang dan teknik lithography. Selanjutnya dilakukan deposisi film tipis CuPc diantara source (S dan drain (D sebagai panjang saluran (channel dan diakhiri dengan deposisi elektrode gate (G. Karakterisai OFET berbasis film tipis dilakukan dengan El-Kahfi 100, untuk menentukan karakteristik keluaran V-I. Hasil karakterisasi OFET dengan panjang channel (L 100 μm dan lebar (W 1 mm, mempunyai daerah aktif, yaitu: 2,80 V sampai dengan 3,42. Mobilitas pembawa muatan OFET untuk daerah saturasi, µ = 0,00182278 cm2 /Vs dan untuk daerah linier, µ = 0,000343818  cm2 /Vs   Abstract __________________________________________________________________________________________ The purpose of this research is to produce and characterize the OFET (Organic Field Effect Transistor based on thin film with bottom-contact structure. The OFET production consists of the substract wash by using ethanol in the ultrasonic cleaner, then electrode deposition of source and drain on the SiO2 substract by using vacuum evaporation in the room temperature and lithography technique.  Then, the deposition of thin film of CuPc between source (S and drain (D was done as the channel length and ended with electrode gate (G deposition. The OFET characterization  with channel length (L  100 μm and wide (W 1 mm  obtained the active area of 2,80 - 3,42 v. While the mobility of OFET charge carrier  obtained µ =  0,00182278 cm2 /Vs for the saturation area and µ = 0,000343818  cm2 /Vs for linier area.

  16. Graphene-based field effect transistor in two-dimensional paper networks

    Energy Technology Data Exchange (ETDEWEB)

    Cagang, Aldrine Abenoja; Abidi, Irfan Haider; Tyagi, Abhishek [Department of Chemical and Biomolecular Engineering, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong); Hu, Jie; Xu, Feng [Bioinspired Engineering and Biomechanics Center (BEBC), Xi' an Jiaotong University, Xi' an 710049 (China); The Key Laboratory of Biomedical Information Engineering of Ministry of Education, School of Life Science and Technology, Xi' an Jiaotong University, Xi' an 710049 (China); Lu, Tian Jian [Bioinspired Engineering and Biomechanics Center (BEBC), Xi' an Jiaotong University, Xi' an 710049 (China); Luo, Zhengtang, E-mail: keztluo@ust.hk [Department of Chemical and Biomolecular Engineering, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong)

    2016-04-21

    We demonstrate the fabrication of a graphene-based field effect transistor (GFET) incorporated in a two-dimensional paper network format (2DPNs). Paper serves as both a gate dielectric and an easy-to-fabricate vessel for holding the solution with the target molecules in question. The choice of paper enables a simpler alternative approach to the construction of a GFET device. The fabricated device is shown to behave similarly to a solution-gated GFET device with electron and hole mobilities of ∼1256 cm{sup 2} V{sup −1} s{sup −1} and ∼2298 cm{sup 2} V{sup −1} s{sup −1} respectively and a Dirac point around ∼1 V. When using solutions of ssDNA and glucose it was found that the added molecules induce negative electrolytic gating effects shifting the conductance minimum to the right, concurrent with increasing carrier concentrations which results to an observed increase in current response correlated to the concentration of the solution used. - Highlights: • A graphene-based field effect transistor sensor was fabricated for two-dimensional paper network formats. • The constructed GFET on 2DPN was shown to behave similarly to solution-gated GFETs. • Electrolyte gating effects have more prominent effect over adsorption effects on the behavior of the device. • The GFET incorporated on 2DPN was shown to yield linear response to presence of glucose and ssDNA soaked inside the paper.

  17. Non-Planar Nanotube and Wavy Architecture Based Ultra-High Performance Field Effect Transistors

    KAUST Repository

    Hanna, Amir

    2016-11-01

    This dissertation presents a unique concept for a device architecture named the nanotube (NT) architecture, which is capable of higher drive current compared to the Gate-All-Around Nanowire architecture when applied to heterostructure Tunnel Field Effect Transistors. Through the use of inner/outer core-shell gates, heterostructure NT TFET leverages physically larger tunneling area thus achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. We discuss the physics of p-type (Silicon/Indium Arsenide) and n-type (Silicon/Germanium hetero-structure) based TFETs. Numerical TCAD simulations have shown that NT TFETs have 5x and 1.6 x higher normalized ION when compared to GAA NW TFET for p and n-type TFETs, respectively. This is due to the availability of larger tunneling junction cross sectional area, and lower Shockley-Reed-Hall recombination, while achieving sub 60 mV/dec performance for more than 5 orders of magnitude of drain current, thus enabling scaling down of Vdd to 0.5 V. This dissertation also introduces a novel thin-film-transistors architecture that is named the Wavy Channel (WC) architecture, which allows for extending device width by integrating vertical fin-like substrate corrugations giving rise to up to 50% larger device width, without occupying extra chip area. The novel architecture shows 2x higher output drive current per unit chip area when compared to conventional planar architecture. The current increase is attributed to both the extra device width and 50% enhancement in field effect mobility due to electrostatic gating effects. Digital circuits are fabricated to demonstrate the potential of integrating WC TFT based circuits. WC inverters have shown 2× the peak-to-peak output voltage for the same input, and ~2× the operation frequency of the planar inverters for the same peak-to-peak output voltage. WC NAND circuits have shown 2× higher peak-to-peak output voltage, and 3× lower high-to-low propagation

  18. Ambipolar field-effect transistors by few-layer InSe with asymmetry contact metals

    Directory of Open Access Journals (Sweden)

    Chang-Yu Lin

    2017-07-01

    Full Text Available Group IIIA−VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties. In this study, we demonstrated that metal and InSe junctions can lead to carrier behaviors in few-layered InSe FETs. These results indicate that the polarity of few-layered InSe FETs can be determined by using metals with different work functions. We adopted FET S/D metal contacts with asymmetric work functions to reduce the Schottky barriers of electrons and holes, and discovered that few-layered InSe FETs with carefully selected metal contacts can achieve ambipolar behaviors. These results indicate that group IIIA−VIA layered semiconductor FETs with asymmetry contact metals have great potential for applications in photovoltaic devices, optical sensors, and CMOS inverter circuits.

  19. Impact of strain on electronic and transport properties of 6 nm hydrogenated germanane nano-ribbon channel double gate field effect transistor

    Science.gov (United States)

    Meher Abhinav, E.; Sundararaj, Anuraj; Gopalakrishnan, Chandrasekaran; Kasmir Raja, S. V.; Chokhra, Saurabh

    2017-11-01

    In this work, chair like fully hydrogenated germanane (CGeH) nano-ribbon 6 nm short channel double gate field effect transistor (DG-FET) has been modeled and the impact of strain on the I-V characteristics of CGeH channel has been examined. The bond lengths, binding and formation energies of various hydrogenated geometries of buckled germanane channel were calculated using local density approximation (LDA) with Perdew-Zunger (PZ) and generalized gradient approximation (GGA) with Perdew Burke Ernzerhof (PBE) parameterization. From four various geometries, chair like structure is found to be more stable compared to boat like obtuse, stiruup structure and table like structure. The bandgap versus width, bandgap versus strain characteristics and I-V characteristics had been analyzed at room temperature using density functional theory (DFT). Using self consistent calculation it was observed that the electronic properties of nano-ribbon is independent of length and band structure, but dependent on edge type, strain [Uni-axial (ɛ xx ), bi-axial (ɛ xx   =  ɛ yy )] and width of the ribbon. The strain engineered hydrogenated germanane (GeH) showed wide direct bandgap (2.3 eV) which could help to build low noise electronic devices that operates at high frequencies. The observed bi-axial compression has high impact on the device transport characteristics with peak to valley ratio (PVR) of 2.14 and 380% increase in peak current compared to pristine CGeH device. The observed strain in CGeH DG-FET could facilitate in designing novel multiple-logic memory devices due to multiple negative differential resistance (NDR) regions.

  20. Organic Electrolyte Based Pulsed Nanoplating and Fabrication of Carbon Nanotube Network Transistors

    Science.gov (United States)

    Kang, Myung Gil; Hwang, Dong Hoon; Kim, Tae Geun; Hwang, Jong Seung; Ahn, Doyeol; Whang, Dongmok; Hwang, Sung Woo

    2011-06-01

    The formation of gold nanocontacts was performed using a pulsed electrochemical plating technique. The effect of various plating variables on the surface roughness of the plated electrodes was studied in the high frequency regime where the reduction reaction of gold complex becomes the bottleneck process. We demonstrated the selective contact formation of single wall carbon nanotube network field effect transistors (FETs) with this technique. The fabricated FETs exhibit usual p-type behavior with the performance comparable to usual network FETs.

  1. Scaling behavior of hysteresis in multilayer MoS{sub 2} field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tao; Du, Gang; Zhang, Baoshun; Zeng, Zhongming, E-mail: zmzeng2012@sinano.ac.cn [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123 (China)

    2014-09-01

    Extrinsic hysteresis effects are often observed in MoS{sub 2} field effect devices due to adsorption of gas molecules on the surface of MoS{sub 2} channel. Scaling is a common method used in ferroics to quantitatively study the hysteresis. Here, the scaling behavior of hysteresis in multilayer MoS{sub 2} field effect transistors with a back-gated configuration was investigated. The power-law scaling relations were obtained for hysteresis area (〈A〉) and memory window (ΔV) with varying the region of back-gate voltage (V{sub bg,max}). It is interesting to find that the transition voltage in the forward sweep (V{sub FW}) and in the backward sweep (V{sub BW}) shifted to the opposite directions of back-gate voltage (V{sub bg}) with increasing V{sub bg,max}. However, when decreasing V{sub bg,max}, V{sub FW} shifted to positive and reversibly recovered, but V{sub BW} almost kept unchanged. The evolution of 〈A〉, ΔV, V{sub FW,} and V{sub BW} with V{sub bg,max} were discussed by the electrons transferring process between the adsorbate and MoS{sub 2} channel.

  2. Dynamic character of charge transport parameters in disordered organic semiconductor field-effect transistors.

    Science.gov (United States)

    Chen, Y; Lee, B; Yi, H T; Lee, S S; Payne, M M; Pola, S; Kuo, C-H; Loo, Y-L; Anthony, J E; Tao, Y T; Podzorov, V

    2012-11-07

    In this perspective article, we discuss the dynamic instability of charge carrier transport in a range of popular organic semiconductors. We observe that in many cases field-effect mobility, an important parameter used to characterize the performance of organic field-effect transistors (OFETs), strongly depends on the rate of the gate voltage sweep during the measurement. Some molecular systems are so dynamic that their nominal mobility can vary by more than one order of magnitude, depending on how fast the measurements are performed, making an assignment of a single mobility value to devices meaningless. It appears that dispersive transport in OFETs based on disordered semiconductors, those with a high density of localized trap states distributed over a wide energy range, is responsible for the gate voltage sweep rate dependence of nominal mobility. We compare such rate dependence in different materials and across different device architectures, including pristine and trap-dominated single-crystal OFETs, as well as solution-processed polycrystalline thin-film OFETs. The paramount significance given to a single mobility value in the organic electronics community and the practical importance of OFETs for applications thus suggest that such an issue, previously either overlooked or ignored, is in fact a very important point to consider when engaging in fundamental studies of charge carrier mobility in organic semiconductors or designing applied circuits with organic semiconductors.

  3. Electrospray-processed soluble acenes toward the realization of high-performance field-effect transistors.

    Science.gov (United States)

    Pitsalidis, Charalampos; Pappa, Anna-Maria; Hunter, Simon; Payne, Marcia M; Anthony, John E; Anthopoulos, Thomas D; Logothetidis, Stergios

    2015-04-01

    Functionalized acenes have proven to be promising compounds in the field of molecular electronics because of their unique features in terms of the stability, performance, and ease of processing. The emerging concept of large-area-compatible techniques for flexible electronics has brought about a wide variety of well-established techniques for the deposition of soluble acenes, with spray-coating representing an especially fruitful approach. In the present study, electrostatic spray deposition is proposed as an alternative to the conventional spray-coating processes, toward the realization of high-performance organic field-effect transistors (OFETs), on both rigid and flexible substrates. Particularly, a thorough study on the effect of the solvent and spraying regime on the resulting crystalline film's morphology is performed. By optimization of the process conditions in terms of control over the size as well as the crystallization scheme of the droplets, desirable morphological features along with high-quality crystal domains are obtained. The fabricated OFETs exhibit excellent electrical characteristics, with high field-effect mobility up to 0.78 cm(2)/(V s), I(on)/I(off) >10(4), and near-zero threshold voltages. Additionally, the good performance of the OFETs realized on plastic substrates gives great potentiality to the proposed method for applications in the challenging field of large-area electronics.

  4. Chemical vapor deposition grown monolayer graphene field-effect transistors with reduced impurity concentration

    Science.gov (United States)

    Ha, Tae-Jun; Lee, Alvin

    2015-07-01

    We report on the restoration of the electronic characteristics of waferscale chemical vapor deposition (CVD) monolayer graphene field-effect transistors (GFETs) by reducing the impurity concentration. An optimized electropolishing process on copper foils combined with carbon-fluorine encapsulation using a suitable amorphous fluoropolymer enables reducing the surface roughness of graphene and screening out interfacial impurity scattering, which leads to an improvement in all key device metrics. The conductivity at the Dirac point is substantially reduced, resulting in an increase in the on-off current ratio. In addition, the field-effect mobility increased from 1817 to 3918 cm2/V-s, the impurity concentration decreased from 1.1 × 1012 to 2.1 × 1011 cm-2 and the electron and hole transport became more symmetric. Significantly, favorable shifts toward zero voltage were observed in the Dirac point. We postulate that the smoother surface due to electropolishing and a pool of strong dipole-dipole moments in the flouropolymer coating provide a charge buffer that relaxes the fluctuation in the electron-hole puddles. We also investigate the long-term stability in GFETs encapsulated with fluoropolymer, which exhibit a high hydrophobicity that suppresses the chemical interaction with water molecules. [Figure not available: see fulltext.

  5. Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems

    Directory of Open Access Journals (Sweden)

    Thomas Reichert

    2017-05-01

    Full Text Available We present magnetoresistive organic field-effect transistors featuring ultrasmall magnetic field-effects as well as a sign reversal. The employed material systems are coevaporated thin films with different compositions consisting of the electron donor 2,2',7,7'-tetrakis-(N,N-di-p-methylphenylamino-9,9'-spirobifluorene (Spiro-TTB and the electron acceptor 1,4,5,8,9,12-hexaazatriphenylene hexacarbonitrile (HAT-CN. Intermolecular charge transfer between Spiro-TTB and HAT-CN results in a high intrinsic charge carrier density in the coevaporated films. This enhances the probability of bipolaron formation, which is the process responsible for magnetoresistance effects in our system. Thereby even ultrasmall magnetic fields as low as 0.7 mT can influence the resistance of the charge transport channel. Moreover, the magnetoresistance is drastically influenced by the drain voltage, resulting in a sign reversal. An average B0 value of ≈2.1 mT is obtained for all mixing compositions, indicating that only one specific quasiparticle is responsible for the magnetoresistance effects. All magnetoresistance effects can be thoroughly clarified within the framework of the bipolaron model.

  6. Interface engineering: an effective approach toward high-performance organic field-effect transistors.

    Science.gov (United States)

    Di, Chong-an; Liu, Yunqi; Yu, Gui; Zhu, Daoben

    2009-10-20

    By virtue of their excellent solution processibility and flexibility, organic field-effect transistors (OFETs) are considered outstanding candidates for application in low-cost, flexible electronics. Not only does the performance of OFETs depend on the molecular properties of the organic semiconductors involved, but it is also dramatically affected by the nature of the interfaces present. Therefore, interface engineering, a novel approach towards high-performance OFETs, has attracted considerable attention. In this Account, we focus on recent advances in the study of OFET interfaces--including electrode/organic layer interfaces, dielectric/organic layer interfaces, and organic/organic layer interfaces--that have resulted in improved device performance, enhanced stability, and the realization of organic light-emitting transistors. The electrode/organic layer interface, one of the most important interfaces in OFETs, usually determines the carrier injection characteristics. Focusing on OFETs with copper and silver electrodes, we describe effective modification approaches of the electrode/organic layer interfaces. Furthermore, the influence of electrode morphology on device performance is demonstrated. These results provide novel approaches towards high-performance, low-cost OFETs. The dielectric/organic layer interface is a vital interface that dominates carrier transport; modification of this interface therefore offers a general way to improve carrier transport accordingly. The dielectric layer also affects the device stability of OFETs. For example, high-performance pentacene OFETs with excellent stability are obtained by the selection of a dielectric layer with an appropriate surface energy. The organic/organic layer interface is a newly investigated topic in OFETs. Introduction of organic/organic layer interfaces, such as heterojunctions, can improve device performance and afford ambipolar OFETs. By designing laterally arranged heterojunctions made of organic

  7. Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: Theory versus experiment

    Energy Technology Data Exchange (ETDEWEB)

    Pasadas, Francisco, E-mail: Francisco.Pasadas@uab.cat; Jiménez, David [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, 08193 Bellaterra (Spain)

    2015-12-28

    Bilayer graphene is a promising material for radio-frequency transistors because its energy gap might result in a better current saturation than the monolayer graphene. Because the great deal of interest in this technology, especially for flexible radio-frequency applications, gaining control of it requires the formulation of appropriate models for the drain current, charge, and capacitance. In this work, we have developed them for a dual-gated bilayer graphene field-effect transistor. A drift-diffusion mechanism for the carrier transport has been considered coupled with an appropriate field-effect model taking into account the electronic properties of the bilayer graphene. Extrinsic resistances have been included considering the formation of a Schottky barrier at the metal-bilayer graphene interface. The proposed model has been benchmarked against experimental prototype transistors, discussing the main figures of merit targeting radio-frequency applications.

  8. Gate-bias controlled charge trapping as a mechanism for NO2 detection with field-effect transistors

    NARCIS (Netherlands)

    Andringa, A.-M.; Meijboom, J.R.; Smits, E.C.P.; Mathijssen, S.G.J.; Blom, P.W.M.; Leeuw, D.M. de

    2011-01-01

    Detection of nitrogen dioxide, NO2, is required to monitor the air-quality for human health and safety. Commercial sensors are typically chemiresistors, however field-effect transistors are being investigated. Although numerous investigations have been reported, the NO2 sensing mechanism is not

  9. Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

    NARCIS (Netherlands)

    Andringa, A.; Vlietstra, N.; Smits, E.C.P.; Spijkman, M.J.; Gomes, H.L.; Klootwijk, J.H.; Blom, P.W.M.; Leeuw, D.M. de

    2013-01-01

    Nitrogen dioxide (NO2) detection with ZnO field-effect transistors is based on changes in the threshold voltage caused by charge carriertrapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature. The threshold voltage shifts for both trapping and recovery

  10. Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors

    NARCIS (Netherlands)

    Andringa, Anne-Marije; Meijboom, Juliaan R.; Smits, Edsger C. P.; Mathijssen, Simon G. J.; Blom, Paul W. M.; de Leeuw, Dago M.

    2011-01-01

    Detection of nitrogen dioxide, NO2, is required to monitor the air-quality for human health and safety. Commercial sensors are typically chemiresistors, however field-effect transistors are being investigated. Although numerous investigations have been reported, the NO2 sensing mechanism is not

  11. Influence of molecular weight on the short-channel effect in polymer-based field-effect transistors

    NARCIS (Netherlands)

    Tunc, Ali Veysel; Ecker, Bernhard; Dogruyol, Zekeriya; Juechter, Sabrina; Ugur, Ahmet Lutfi; Erdogmus, Ali; San, Sait Eren; Parisi, Juergen; von Hauff, Elizabeth

    2012-01-01

    In this study, we demonstrate how the intrinsic properties of a polymer can influence the electrical characteristics of organic field-effect transistors (OFETs). OFETs fabricated with three batches of poly[2-methoxy,5-(3′,7′-dimethyl-octyloxy)]-p-phenylene vinylene (MDMO-PPV) were investigated. The

  12. Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

    Science.gov (United States)

    Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

    2015-01-01

    We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/ Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal−glycerol (CNC/glycerol...

  13. Controlling of the surface energy of the gate dielectric in organic field-effect transistors by polymer blend

    NARCIS (Netherlands)

    Gao, Jia; Asadi, Kamal; Xu, Jian Bin; An, Jin

    2009-01-01

    In this letter, we demonstrate that by blending insulating polymers, one can fabricate an insulating layer with controllable surface energy for organic field-effect transistors. As a model system, we used copper phthalocyanine evaporated on layers of polymethyl metacrylate blended with polystyrene

  14. Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

    NARCIS (Netherlands)

    Sharma, A.; Janssen, N.M.A.; Matthijssen, S.J.G.; de Leeuw, D.M.; Kemerink, M.; Bobbert, P.A.

    2011-01-01

    We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a

  15. High I on/I off current ratio graphene field effect transistor: the role of line defect.

    Science.gov (United States)

    Tajarrod, Mohammad Hadi; Saghai, Hassan Rasooli

    2015-01-01

    The present paper casts light upon the performance of an armchair graphene nanoribbon (AGNR) field effect transistor in the presence of one-dimensional topological defects. The defects containing 5-8-5 sp(2)-hybridized carbon rings were placed in a perfect graphene sheet. The atomic scale behavior of the transistor was investigated in the non-equilibrium Green's function (NEGF) and tight-binding Hamiltonian frameworks. AGNRFET basic terms such as the on/off current, transconductance and subthreshold swing were investigated along with the extended line defect (ELD). The results indicated that the presence of ELDs had a significant effect on the parameters of the GNRFET. Compared to conventional transistors, the increase of the I on/I off ratio in graphene transistors with ELDs enhances their applicability in digital devices.

  16. G(sup 4)FET Implementations of Some Logic Circuits

    Science.gov (United States)

    Mojarradi, Mohammad; Akarvardar, Kerem; Cristoleveanu, Sorin; Gentil, Paul; Blalock, Benjamin; Chen, Suhan

    2009-01-01

    Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration

  17. Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

    Science.gov (United States)

    Gan, Kwang-Jow; Tsai, Cher-Shiung; Liang, Dong-Shong; Wen, Chun-Ming; Chen, Yaw-Hwang

    2006-09-01

    A trivalued memory circuit based on two cascoded metal-oxide-semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance (MOS-BJT-NDR) devices is investigated. The MOS-BJT-NDR device is made of MOS and BJT devices, but it can show the NDR current-voltage characteristic by suitably arranging the MOS parameters. We demonstrate a trivalued memory circuit using the two-peak MOS-BJT-NDR circuit as the driver and a resistor as the load. The MOS-BJT-NDR devices and memory circuits are fabricated by the standard 0.35 μm SiGe process.

  18. Thiophene-Thiazole-Based Semiconducting Copolymers for High-Performance Polymer Field-Effect Transistors.

    Science.gov (United States)

    Chung, Jong Won; Park, Won-Tae; Park, Jeong-Il; Yun, Youngjun; Gu, Xiaodan; Lee, Jiyoul; Noh, Yong-Young

    2017-11-08

    We report a newly synthesized donor (D)-acceptor (A)type semiconducting copolymer, consisting of thiophene as an electron-donating unit and thiazole as an electron-accepting unit (PQTBTz-TT-C8) for the active layer of the organic field-effect transistors (OFETs). Specifically, this study investigates the structure and electrical property relationships of PQTBTz-TT-C8 with comprehensive analyses on the charge-transporting properties corresponding to the spin rate of the spin coater during the formation of the PQTBTz-TT-C8 film. The crystallinity of PQTBTz-TT-C8 films is examined with grazing incidence X-ray diffraction. Temperature-dependent transfer measurements of the OFETs are conducted to extract the density of states (DOS) and characterize the charge-transport properties. Comparative analyses on charge transports within the framework of the physical model, based on polaron hopping and Gaussian DOS, reveal that the prefactors of both physical charge-transport models are independent of the spin-coating condition for the films. For staggered structural transistors, however, the thickness of the PQTBTz-TT-C8 films, which strongly affect the series resistance along the charge-transfer path in a vertical direction, is changed in accordance with the spin-coating rate. In other words, the spin-coating rate of the PQTBTz-TT-C8 films influences the thickness of the polymer films, yet any significant changes in the crystallinity of the film or electronic coupling between the neighboring molecules upon the spin-coating condition were barely noticeable. Because the PQTBTz-TT-C8 backbone chains inside the thin film are stacked up with the edge-on, the series resistances are changed according to the thickness of the film and thus the performance of the device varies depending on the thickness.

  19. Lifetime of Poly(triaryl amine) Based Organic Field Effect Transistors under Different Environmental Conditions

    Science.gov (United States)

    Lau, Tobias; Lorenz, Enno; Koyuncu, Metin

    2013-04-01

    Characterization of reliability and lifetime is a key issue on the way to commercialization of products based on organic electronics. Prediction of the lifetime requires the understanding of failure mechanisms and the circumstances leading to failure. In this work the stability of poly(triaryl amine) (PTAA) based organic field effect transistors (OFETs) on a poly(ethylene naphthalate) (PEN) substrate is investigated under environmental stressing. PTAA is known to form amorphous thin films after spin coating and to be air stable for extended periods of time. This inherent air stability makes it a good candidate for testing of environmental influences. The samples were electrically characterized regularly between storage cycles at 85 °C and 85 °C/85% relative humidity (RH). Samples stored under dry atmosphere and inert gas were used as reference. More than 1700 OFETs were produced in multiple batches and measured using an automated measurement system to collect statistically significant data. Circuit-relevant OFET parameters such as on- and off-current, mobility, threshold voltage and gate leakage current were extracted applying a thin film transistor (TFT) device model to the measured transfer and output curves. The threshold voltage is found to be the most sensitive parameter especially for the samples stored at 85 °C. The effect of storage under 85 °C/85%RH is observed to be comparably small. Fourier transform infrared (FT-IR) measurements of the aged OFET samples indicate a correlation between the shift of the electrical parameters and the appearance of carbonyl groups in the dielectric layer of the devices. Possible degradation mechanisms are discussed based on this observation.

  20. Highly aligned conjugated polymer films prepared by rotation coating for high-performance organic field-effect transistors

    Science.gov (United States)

    Van Tho, Luu; Park, Won-Tae; Choi, Eun-Young; Noh, Yong-Young

    2017-04-01

    Recently, exceptionally high field-effect mobility in organic field-effect transistors (OFETs) has been fabricated using semiconducting films with one-dimensionally aligned, highly planar electron donor-acceptor copolymers, within the channel of transistors. Here, we propose an extremely simple coating method, called rotation coating, for preparing highly aligned, conjugated polymer thin films for applications in various organic electronic devices. We realize highly aligned polymer films using various conjugated polymers and applied the films as active layers for high-performance OFETs. Significantly high field-effect mobility values of 1.45 ± 0.46 cm2/Vs have been achieved for rotation coated diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer films.

  1. Correlation between crystal structure and mobility in organic field-effect transistors based on single crystals of tetrathiafulvalene derivatives.

    Science.gov (United States)

    Mas-Torrent, Marta; Hadley, Peter; Bromley, Stefan T; Ribas, Xavi; Tarrés, Judit; Mas, Montserrat; Molins, Elies; Veciana, Jaume; Rovira, Concepció

    2004-07-14

    Recently, it was reported that crystals of the organic material dithiophene-tetrathiafulvalene (DT-TTF) have a high field-effect charge carrier mobility of 1.4 cm(2)/(V x s). These crystals were formed by a simple drop-casting method, making this material interesting to investigate for possible applications in low-cost electronics. Here, organic single-crystal field-effect transistors based on materials related to DT-TTF are presented and a clear correlation between the crystal structure and the electrical characteristics is observed. The observed relationship between the mobilities in the different crystal structures is strongly corroborated by calculations of both the molecular reorganization energies and the maximum intermolecular transfer integrals. The most suitable materials described here exhibit mobilities that are among the highest reported for organic field-effect transistors and that are the highest reported for solution-processed materials.

  2. Sensing properties of separative paper-based extended-gate ion-sensitive field-effect transistor for cost effective pH sensor applications

    Science.gov (United States)

    Cho, Won-Ju; Lim, Cheol-Min

    2018-02-01

    In this study, we developed a cost-effective ion-sensing field-effect transistor (FET) with an extended gate (EG) fabricated on a separative paper substrate. The pH sensing characteristics of the paper EG was compared with those of other EGs fabricated on silicon, glass, or polyimide substrates. The fabricated paper-based EGFET exhibited excellent sensitivity close to the Nernst response limit as well as to that of the other substrate-based EGFETs. In addition, we found that all EGFETs, regardless of the substrate, have similar non-ideal behavior, i.e., drift phenomenon and hysteresis width. To investigate the degradation and durability of the paper EG after prolonged use, aging-effect tests were carried out in terms of the hysteresis width and sensitivity over a course of 30 days. As a result, the paper EG maintained stable pH sensing characteristics after 30 days. Therefore, we expect that paper EGFETs can provide a cost-effective sensor platform.

  3. Diamond field-effect transistors for RF power electronics: Novel NO2 hole doping and low-temperature deposited Al2O3 passivation

    Science.gov (United States)

    Kasu, Makoto

    2017-01-01

    Diamond possesses a combination of exceptional physical properties and is expected to be used as a semiconductor material in high-efficiency and high-power electronic devices. In this study, hole doping was observed when using NO2 molecules on a H-diamond surface. The activation energy of hole concentration in NO2/H-diamond was measured as 0.006 eV, and holes were fully activated at room temperature. A thermal stabilization of the hole channel was realized by passivation with an atomic-layer-deposited Al2O3 layer. The passivation method enabled the realization of a thermally stable high-performance diamond field-effect transistor (FET), which exhibited high-performance DC and RF characteristics. NO2 hole-doping and Al2O3-passivation technologies enabled reproducible measurements of MOS structure electric properties. Such technologies also facilitated observations of two-dimensional holes at the MOS interface and type-II band alignment of Al2O3/NO2/H-diamond. Additionally, the band diagram under various gate bias conditions was proposed on the basis of capacitance-voltage measurements and analysis using Poisson’s equations.

  4. Polarization induced doped transistor

    Science.gov (United States)

    Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  5. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length

    International Nuclear Information System (INIS)

    Jyegal, Jang

    2015-01-01

    Velocity overshoot is a critically important nonstationary effect utilized for the enhanced performance of submicron field-effect devices fabricated with high-electron-mobility compound semiconductors. However, the physical mechanisms of velocity overshoot decay dynamics in the devices are not known in detail. Therefore, a numerical analysis is conducted typically for a submicron GaAs metal-semiconductor field-effect transistor in order to elucidate the physical mechanisms. It is found that there exist three different mechanisms, depending on device bias conditions. Specifically, at large drain biases corresponding to the saturation drain current (dc) region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid decrease of the momentum relaxation time, not the mobility, arising from the effect of velocity-randomizing intervalley scattering. It then continues to drop rapidly and decays completely by severe mobility reduction due to intervalley scattering. On the other hand, at small drain biases corresponding to the linear dc region, the velocity overshoot suddenly begins to drop very sensitively due to the onset of a rapid increase of thermal energy diffusion by electrons in the channel of the gate. It then continues to drop rapidly for a certain channel distance due to the increasing thermal energy diffusion effect, and later completely decays by a sharply decreasing electric field. Moreover, at drain biases close to a dc saturation voltage, the mechanism is a mixture of the above two bias conditions. It is suggested that a large secondary-valley energy separation is essential to increase the performance of submicron devices

  6. In-situ doped junctionless polysilicon nanowires field effect transistors for low-cost biosensors

    Directory of Open Access Journals (Sweden)

    Azeem Zulfiqar

    2017-04-01

    Full Text Available Silicon nanowire (SiNW field effect transistor based biosensors have already been proven to be a promising tool to detect biomolecules. However, the most commonly used fabrication techniques involve expensive Silicon-On-Insulator (SOI wafers, E-beam lithography and ion-implantation steps. In the work presented here, a top down approach to fabricate SiNW junctionless field effect biosensors using novel in-situ doped polysilicon is demonstrated. The p-type polysilicon is grown with an optimum boron concentration that gives a good metal-silicon electrical contact while maintaining the doping level at a low enough level to provide a good sensitivity for the biosensor. The silicon nanowires are patterned using standard photolithography and a wet etch method. The metal contacts are made from magnetron sputtered TiW and e-beam evaporation of gold. The passivation of electrodes has been done by sputtered Si3N4 which is patterned by a lift-off process. The characterization of the critical fabrication steps is done by Secondary Ion Mass Spectroscopy (SIMS and by statistical analysis of the measurements made on the width of the SiNWs. The electrical characterization of the SiNW in air is done by sweeping the back gate voltage while keeping the source drain potential to a constant value and surface characterization is done by applying liquid gate in phosphate buffered saline (PBS solution. The fabricated SiNWs sensors functionalized with (3-aminopropyltriethoxysilane (APTES have demonstrated good sensitivity in detecting different pH buffer solutions.

  7. Bipolar redox behaviour, field-effect mobility and transistor switching of the low-molecular azo glass AZOPD.

    Science.gov (United States)

    Arlt, Michael; Scheffler, Ayna; Suske, Irina; Eschner, Michael; Saragi, Tobat P I; Salbeck, Josef; Fuhrmann-Lieker, Thomas

    2010-11-07

    We present electrochemical and spectroelectrochemical data for the bipolar azo compound N,N'-diphenyl-N,N'-bis[4-(phenylazo)phenyl]-4,4'diaminobiphenyl (AZOPD) demonstrating reversible bipolar redox behaviour with a bandgap of 2.1 eV. The reduced species formed upon two-electron transfer can be described as bis(radical anion) as was confirmed by comparison with a reference compound with only one azo chromophore. Hole and electron transport behaviour in amorphous films was demonstrated by the fabrication of organic field-effect transistors using gold and magnesium contacts, respectively. The transistors are sensitive to light due to E-Z photoisomerization.

  8. Nitrogen plasma-treated multilayer graphene-based field effect transistor fabrication and electronic characteristics

    Science.gov (United States)

    Su, Wei-Jhih; Chang, Hsuan-Chen; Honda, Shin-ichi; Lin, Pao-Hung; Huang, Ying-Sheng; Lee, Kuei-Yi

    2017-08-01

    Chemical doping with hetero-atoms is an effective method used to change the characteristics of materials. Nitrogen doping technology plays a critical role in regulating the electronic properties of graphene. Nitrogen plasma treatment was used in this work to dope nitrogen atoms to modulate multilayer graphene electrical properties. The measured I-V multilayer graphene-base field-effect transistor characteristics (GFETs) showed a V-shaped transfer curve with the hole and electron region separated from the measured current-voltage (I-V) minimum. GFETs fabricated with multilayer graphene from chemical vapor deposition (CVD) exhibited p-type behavior because of oxygen adsorption. After using different nitrogen plasma treatment times, the minimum in I-V characteristic shifted into the negative gate voltage region with increased nitrogen concentration and the GFET channel became an n-type semiconductor. GFETs could be easily fabricated using this method with potential for various applications. The GFET transfer characteristics could be tuned precisely by adjusting the nitrogen plasma treatment time.

  9. Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.

    Science.gov (United States)

    Tan, Wee Chong; Cai, Yongqing; Ng, Rui Jie; Huang, Li; Feng, Xuewei; Zhang, Gang; Zhang, Yong-Wei; Nijhuis, Christian A; Liu, Xinke; Ang, Kah-Wee

    2017-06-01

    Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈10 5 cm 2 V -1 s -1 ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm 2 V -1 s -1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Relation between film thickness and surface doping of MoS2 based field effect transistors

    Science.gov (United States)

    Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

    2018-05-01

    Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

  11. Radical Polymer Utilization for Interfacial Improvement of Organic Field-Effect Transistors

    Science.gov (United States)

    Sung, Seung Hyun; Bajaj, Nikhil; Rhoads, Jeffrey; Chiu, George; Boudouris, Bryan

    Metal-semiconductor interfacial contact is one of the crucial factors for high-performance organic electronic device applications. In particular, the performance of organic field-effect transistors (OFETs) is critically dependent on the engineering of the interface between the organic semiconductor and the source/drain electrodes. Here, we modulate the performance of pentacene-based OFETs through the inclusion of a specific radical polymer, poly(2,2,6,6-tetramethylpiperidine-1-oxyl methacrylate) (PTMA), at the pentacene-gold electrode interface. Using a simple and fast inkjet printing method, the OFET performance is highly enhanced by the systematic deposition of a thin PTMA layer. The insertion of the radical polymer has an impact on the highly-improved OFET performance due to its redox charge transport ability and the amorphous nature allowing the stable growth of the pentacene. The synergistic effect facilitates the charge injection at the interface of the metal and organic semiconductor, resulting in the highly improved OFET performance. As such, the fundamental insights associated with radical polymers can be widened and their utilization as a highly-improved, low-cost interfacial modifier in myriad organic electronic devices is of great promise.

  12. Investigation of protein detection parameters using nanofunctionalized organic field-effect transistors.

    Science.gov (United States)

    Hammock, Mallory L; Knopfmacher, Oren; Naab, Benjamin D; Tok, Jeffrey B-H; Bao, Zhenan

    2013-05-28

    Biodetection using organic field-effect transistors (OFETs) is gaining increasing interest for applications as diverse as food security, environmental monitoring, and medical diagnostics. However, there still lacks a comprehensive, empirical study on the fundamental limits of OFET sensors. In this paper, we present a thorough study of the various parameters affecting biosensing using an OFET decorated with gold nanoparticle (AuNP) binding sites. These parameters include the spacing between receptors, pH of the buffer, and ionic strength of the buffer. To this end, we employed the thrombin protein and its corresponding DNA binding aptamer to form our model detection system. We demonstrate a detection limit of 100 pM for this protein with high selectivity over other proteases in situ. We describe herein a feasible approach for protein detection with OFETs and a thorough investigation of parameters governing biodetection events using OFETs. Our obtained results should provide important guidelines to tailor the sensor's dynamic range to suit other desired OFET-based biodetection applications.

  13. Characteristics of carrier-generated field-effect transistors with pentacene/vanadium pentoxide

    Energy Technology Data Exchange (ETDEWEB)

    Minagawa, M. [Nagaoka National College of Technology, Niigata (Japan); Nakai, K.; Baba, A.; Shinbo, K.; Kato, K.; Kaneko, F. [Niigata University, Niigata (Japan); Lee, C. [Inha University, Incheon (Korea, Republic of)

    2011-05-15

    In this paper, the driving mechanism of carrier-generated organic field-effect transistors (OFETs) with pentacene and vanadium pentoxide (V{sub 2}O{sub 5}) layers is discussed. In this study, large on-currents were observed in an OFET with a 35-nm V{sub 2}O{sub 5} layer. Devices with aluminum (Al)/pentacene/V{sub 2}O{sub 5}/Al layer structures were also prepared. These devices exhibited a large current density in spite of their high carrier injection barriers between each layer and the Al electrodes. Moreover, new absorption bands corresponding to the radical cation absorption of pentacene were observed within the absorption spectrum of the pentacene and V{sub 2}O{sub 5} mixed layers. It was inferred that the charge transfer (CT) complexes that formed at the interface between the pentacene and V{sub 2}O{sub 5} layers were dissociated by the applied gate voltage and that the generated holes contributed to driving the OFETs.

  14. An analytical solution for contact resistance of staggered organic field-effect transistors

    Science.gov (United States)

    Karimi-Alavijeh, Hamidreza; Katebi-Jahromi, Alireza

    2017-03-01

    We have developed analytical models for bias dependent contact resistance (RC) and output characteristics of staggered organic field-effect transistors (OFETS) based on a bulk resistance-approximated and mobility-modified current-crowding method. Numerical evaluations of RC and its resistive components show that the bias dependency of the bulk resistance is negligible. Consequently, the properties of the active layer interfaces determine RC and its characteristics. Effective parameters include a normally constant charge injection barrier at the organic-metal interface (Eb) and a gate induced surface carrier-concentration (PS0) at the organic-insulator boundary. The energy barrier pertains to the fabrication process, and its related resistance (rc) can be determined as the fitting parameter of the theoretical model. However, PS0 is strongly gate bias dependent and the results of the numerical model indicate that the resulting component (rch) is dominant and has a considerable effect on RC and its characteristics. More importantly, PS0 as the key parameter of the contact resistance is analytically expressible and by using a proposed mobility-modified current-crowding model, the contact resistance can be analytically formulated. Accordingly, the output characteristics of the OFETs in the triode region can be also analytically modeled using the developed relation of RC.

  15. Kelvin-probe studies of n-conductive organic field-effect transistors during operation

    Energy Technology Data Exchange (ETDEWEB)

    Luettich, Franziska; Graaf, Harald; Borczyskowski, Christian von [Chemnitz University of Technology, Institute of Physics, Optical Spectroscopy and Molecular Physics, 09126 Chemnitz (Germany); Lehmann, Daniel; Zahn, Dietrich R.T. [Chemnitz University of Technology, Institute of Physics, Semiconductor Physics, 09126 Chemnitz (Germany)

    2010-02-15

    We report on our investigations of the structural and electronic properties of n-conductive organic field-effect transistors (OFETs). For this purpose we employed the atomic force microscopy (AFM) and Kelvin-probe force microscopy (KPFM) in dual frequency mode. This study facilitates the determination of the local potential in the channel of active OFETs. We studied the influence of insulator treatment on the electrical potential and field distribution within the channel using a self-assembled monolayer of N-octadecyltrichlorosilane (OTS). For the investigated OFETs we used air-stable and electron conducting N,N{sup '}-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN{sub 2}). It appears that the insulator treatment improves the performance even if the surface topography did not change. These results can lead to a better understanding of the charge transport and injection and pave the way towards the optimisation of the electronical properties of active organic devices (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Interfacial electronic effects in functional biolayers integrated into organic field-effect transistors

    Science.gov (United States)

    Angione, Maria Daniela; Cotrone, Serafina; Magliulo, Maria; Mallardi, Antonia; Altamura, Davide; Giannini, Cinzia; Cioffi, Nicola; Sabbatini, Luigia; Fratini, Emiliano; Baglioni, Piero; Scamarcio, Gaetano; Palazzo, Gerardo; Torsi, Luisa

    2012-01-01

    Biosystems integration into an organic field-effect transistor (OFET) structure is achieved by spin coating phospholipid or protein layers between the gate dielectric and the organic semiconductor. An architecture directly interfacing supported biological layers to the OFET channel is proposed and, strikingly, both the electronic properties and the biointerlayer functionality are fully retained. The platform bench tests involved OFETs integrating phospholipids and bacteriorhodopsin exposed to 1–5% anesthetic doses that reveal drug-induced changes in the lipid membrane. This result challenges the current anesthetic action model relying on the so far provided evidence that doses much higher than clinically relevant ones (2.4%) do not alter lipid bilayers’ structure significantly. Furthermore, a streptavidin embedding OFET shows label-free biotin electronic detection at 10 parts-per-trillion concentration level, reaching state-of-the-art fluorescent assay performances. These examples show how the proposed bioelectronic platform, besides resulting in extremely performing biosensors, can open insights into biologically relevant phenomena involving membrane weak interfacial modifications. PMID:22493224

  17. Influence of nickel(II) oxide nanoparticle addition on the performance of organic field effect transistors.

    Science.gov (United States)

    Park, Soohyeong; Nam, Sungho; Kim, Joonhyeon; Seo, Jooyeok; Jeong, Jaehoon; Woo, Sungho; Kim, Hwajeong; Kim, Youngkyoo

    2013-09-01

    Here, the improved performance of organic field effect transistors (OFET) by doping inorganic nanoparticles into a semiconducting polymer as a channel layer is briefly reported. Nickel(II) oxide nanoparticle (NiOnp) was used as an inorganic dopant while regioregular poly(3-hexylthiophene) (P3HT) was used as a matrix polymer for the channel layer in the OFETs. The doping ratio of NiOnp was made 1 wt.% so that it would minimally influence the nanostructure of the P3HT channel layer. The results showed that the optical absorption spectrum of the P3HT film was slightly red-shifted by the NiOnp doping, which reflects the improved crystallinity of the P3HT domains in the P3HT:NiOnp films. The drain current of the OFETs with the P3HT:NiOnp films was significantly enhanced ca. three-to-seven fold by the NiOnp doping under appying gate voltages while the hole mobility of the OFETs P3HT:NiOnp films was improved as much as three fold by the NiOnp doping. The enhanced performance has been assigned to the role of NiOnp that has relatively higher hole mobility than the P3HT polymer.

  18. Development of high-performance printed organic field-effect transistors and integrated circuits.

    Science.gov (United States)

    Xu, Yong; Liu, Chuan; Khim, Dongyoon; Noh, Yong-Young

    2015-10-28

    Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.

  19. Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

    Science.gov (United States)

    Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

    2015-09-01

    We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10-2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

  20. Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

    Science.gov (United States)

    Hou, Ji-Ling; Kasemann, Daniel; Widmer, Johannes; Günther, Alrun A.; Lüssem, Björn; Leo, Karl

    2016-03-01

    Emerging organic integrated electronics require capability of high speed and the compatibility with high-resolution structuring processes such as photolithography. When downscaling the channel length, the contact resistance is known to limit the performance of the short channel devices. In this report, orthogonal photolithography is used for the patterning of the source/drain electrodes of the organic field-effect transistors (OFETs) as well as the interface dopant insertion layers for further modifications of the contact resistance. Bottom-gate top-contact pentacene OFETs with different thicknesses of the p-dopant 2,2'-(perfluoronaphthalene-2,6-diylidene)dimalononitrile under the Au electrodes show a significant decrease in threshold voltage from -2.2 V to -0.8 V and in contact resistance from 55 k Ω cm to 10 k Ω cm by adding a 1 nm thin dopant interlayer. The influence of doping on charge carrier injection is directly visible in the temperature-dependent output characteristics and a charge-transfer activation energy of ˜20 meV is obtained. Our results provide a systematic study of interface contact doping and also show the connection between interface contact doping and improved charge carrier injection by the activation of charge transfer process.