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Sample records for ferromagnetic thin film

  1. Ferromagnetic properties of fcc Gd thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bertelli, T. P., E-mail: tambauh@gmail.com; Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y. [Universidade Federal do Espírito Santo, Departamento de Física, Vitória/ES 29075-910 (Brazil); Pessoa, M. S. [Universidade Federal do Espírito Santo, Departamento de Ciências Naturais, São Mateus/ES 29932-540 (Brazil)

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  2. Phase transitions in pure and dilute thin ferromagnetic films

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1983-10-01

    The mean-field model of a thin ferromagnetic film where the nearest-neighbor exchange coupling in surface layers can be different from that inside the film is considered. The phase diagram, equations for the second-order phase-transition lines, and the spontaneous magnetization profiles near the phase transitions are given. It is shown that there is no extra-ordinary transition in a thin film. If the thickness of the film tends to infinity the well-known results for the mean-field model of a semi-infinite ferromagnet are obtained. The generalization for disordered dilute thin ferromagnetic films and semi-infinite ferromagnets is also given.

  3. Stripe glasses in ferromagnetic thin films

    Science.gov (United States)

    Principi, Alessandro; Katsnelson, Mikhail I.

    2016-02-01

    Domain walls in magnetic multilayered systems can exhibit a very complex and fascinating behavior. For example, the magnetization of thin films of hard magnetic materials is in general perpendicular to the thin-film plane, thanks to the strong out-of-plane anisotropy, but its direction changes periodically, forming an alternating spin-up and spin-down stripe pattern. The latter is stabilized by the competition between the ferromagnetic coupling and dipole-dipole interactions, and disappears when a moderate in-plane magnetic field is applied. It has been suggested that such a behavior may be understood in terms of a self-induced stripe glassiness. In this paper we show that such a scenario is compatible with the experimental findings. The strong out-of-plane magnetic anisotropy of the film is found to be beneficial for the formation of both stripe-ordered and glassy phases. At zero magnetic field the system can form a glass only in a narrow interval of fairly large temperatures. An in-plane magnetic field, however, shifts the glass transition towards lower temperatures, therefore enabling it at or below room temperature. In good qualitative agreement with the experimental findings, we show that a moderate in-plane magnetic field of the order of 50 mT can lead to the formation of defects in the stripe pattern, which sets the onset of the glass transition.

  4. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  5. Engineering Curvature-Induced Anisotropy in Thin Ferromagnetic Films

    Science.gov (United States)

    Tretiakov, Oleg A.; Morini, Massimiliano; Vasylkevych, Sergiy; Slastikov, Valeriy

    2017-08-01

    We investigate the effect of large curvature and dipolar energy in thin ferromagnetic films with periodically modulated top and bottom surfaces on magnetization behavior. We predict that the dipolar interaction and surface curvature can produce perpendicular anisotropy which can be controlled by engineering special types of periodic surface structures. Similar effects can be achieved by a significant surface roughness in the film. We demonstrate that, in general, the anisotropy can point in an arbitrary direction depending on the surface curvature. Furthermore, we provide simple examples of these periodic surface structures to show how to engineer particular anisotropies in thin films.

  6. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    Prasenjit Sen

    2010-04-01

    Electronic and magnetic structures of (1 0 0) films of K and Cs, having thicknesses of one to seven layers, are calculated within the plane-wave projector augmented wave (PAW) formalism of the density functional theory (DFT), using both local spin density approximation (LSDA) and the PW91 generalized gradient approximation (GGA). Only a six-layer Cs film is found to have a ferromagnetic (FM) state which is degenerate with a paramagnetic (PM) state within the accuracy of these calculations. These results are compared with those obtained from calculations on a finite-thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films and bulk hosts are also discussed.

  7. Vanishing magnetic interactions in ferromagnetic thin films.

    Science.gov (United States)

    Dunn, J Hunter; Karis, O; Andersson, C; Arvanitis, D; Carr, R; Abrikosov, I A; Sanyal, B; Bergqvist, L; Eriksson, O

    2005-06-03

    We have used element-specific hysteresis measurements, based on the x-ray magnetic circular dichroism technique, to investigate magnetic trilayer structures composed of Fe and Ni layers. Within a critical regime we have discovered a class of structures in which the exchange interaction, the mechanism responsible for the macroscopic magnetism, can become vanishingly small. The experimental observations are supported by first principles theory and are explained as arising from a cancellation of several competing magnetic interactions. Hence, we have discovered a system with a novel exchange interaction between magnetic layers in direct contact that replaces the conventional exchange interaction in ferromagnets.

  8. Peltier cooling and onsager reciprocity in ferromagnetic thin films.

    Science.gov (United States)

    Avery, A D; Zink, B L

    2013-09-20

    We present direct measurements of the Peltier effect as a function of temperature from 77 to 325 K in Ni, Ni(80)Fe(20), and Fe thin films made using a suspended Si-N membrane structure. Measurement of the Seebeck effect in the same films allows us to directly test predictions of Onsager reciprocity between the Peltier and Seebeck effects. The Peltier coefficient Π is negative for both Ni and Ni(80)Fe(20) films and positive for the Fe film. The Fe film also exhibits a peak associated with the magnon drag Peltier effect. The observation of magnon drag in the Fe film verifies that the coupling between the phonon, magnon, and electron systems in the film is the same whether driven by heat current or charge current. The excellent agreement between Π values predicted using the experimentally determined Seebeck coefficient for these films and measured values offers direct experimental confirmation of the Onsager reciprocity between these thermoelectric effects in ferromagnetic thin films near room temperature.

  9. Peltier Cooling and Onsager Reciprocity in Ferromagnetic Thin Films

    Science.gov (United States)

    Avery, A. D.; Zink, B. L.

    2013-09-01

    We present direct measurements of the Peltier effect as a function of temperature from 77 to 325 K in Ni, Ni80Fe20, and Fe thin films made using a suspended Si-N membrane structure. Measurement of the Seebeck effect in the same films allows us to directly test predictions of Onsager reciprocity between the Peltier and Seebeck effects. The Peltier coefficient Π is negative for both Ni and Ni80Fe20 films and positive for the Fe film. The Fe film also exhibits a peak associated with the magnon drag Peltier effect. The observation of magnon drag in the Fe film verifies that the coupling between the phonon, magnon, and electron systems in the film is the same whether driven by heat current or charge current. The excellent agreement between Π values predicted using the experimentally determined Seebeck coefficient for these films and measured values offers direct experimental confirmation of the Onsager reciprocity between these thermoelectric effects in ferromagnetic thin films near room temperature.

  10. Ferromagnetism and interlayer exchange coupling in thin metallic films

    Energy Technology Data Exchange (ETDEWEB)

    Kienert, Jochen

    2008-07-15

    This thesis is concerned with the ferromagnetic Kondo lattice (s-d,s-f) model for film geometry. The spin-fermion interaction of this model refers to substances in which localized spins interact with mobile charge carriers like in (dilute) magnetic semiconductors, manganites, or rare-earth compounds. The carrier-mediated, indirect interaction between the localized spins comprises the long-range, oscillatory RKKY exchange interaction in the weak-coupling case and the short-range doubleexchange interaction for strong spin-fermion coupling. Both limits are recovered in this work by mapping the problem onto an effective Heisenberg model. The influence of reduced translational symmetry on the effective exchange interaction and on the magnetic properties of the ferromagnetic Kondo lattice model is investigated. Curie temperatures are obtained for different parameter constellations. The consequences of charge transfer and of lattice relaxation on the magnetic stability at the surface are considered. Since the effective exchange integrals are closely related to the electronic structure in terms of the density of states and of the kinetic energy, the discussion is based on the modifications of these quantities in the dimensionally-reduced case. The important role of spin waves for thin film and surface magnetism is demonstrated. Interlayer exchange coupling represents a particularly interesting and important manifestation of the indirect interaction among localized magnetic moments. The coupling between monatomic layers in thin films is studied in the framework of an RKKY approach. It is decisively determined by the type of in-plane and perpendicular dispersion of the charge carriers and is strongly suppressed above a critical value of the Fermi energy. Finally, the temperature-dependent magnetic stability of thin interlayer-coupled films is addressed and the conditions for a temperature-driven magnetic reorientation transition are discussed. (orig.)

  11. The fabrication and microwave characterisation of ferromagnetic thin films

    CERN Document Server

    Hood, K A

    2001-01-01

    This thesis discusses work carried out on the examination of the magnetic and microwave properties of samples based on the ferromagnetic material, METGLAS 2605SC. Sputter deposited thin film samples were stacked together to produce arrays and their permittivity and permeability was measured over a frequency range of 8-12 GHz. Powdered METGLAS 2605SC was mixed with wax and moulded to form composite samples for similar testing over the frequency range 2-20 GHz. The fabrication of the samples was monitored at each stage, and the measurement techniques were shown to be precise and accurate. Similar work in this field is discussed, as is the basic theory used in this project. It is hoped that this thesis constitutes a comprehensive text on the fabrication and measurement and analysis of magnetic samples at microwave frequencies should this work he continued.

  12. Anisotropic magnetothermopower in ferromagnetic thin films grown on macroscopic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jayathilaka, P.B. [Department of Physical Sciences, Faculty of Applied Sciences, Rajarata University of Sri Lanka, Mihintale (Sri Lanka); Belyea, D.D. [Department of Physics, University of South Florida, 4202 East Fowler Avenue, Tampa, FL 33620 (United States); Fawcett, T.J. [College of Engineering, University of South Florida, 4202 East Fowler Avenue, Tampa, FL 33620 (United States); Miller, Casey W. [School of Chemistry and Materials Science, Rochester Institute of Technology, 85 Lomb Memorial Drive, Rochester, NY 14623 (United States)

    2015-05-15

    We report observing the anisotropic magnetothermopower in a variety of ferromagnetic thin films grown on macroscopic substrates. These measurements were enabled by eliminating spurious signals related to the Anomalous Nernst Effect by butt-mounting the sample to the heat source and sink, and appropriate positioning of electrical contacts to avoid unwanted thermal gradients. This protocol enabled detailed measurements of the magnetothermopower in the transverse and longitudinal configurations. This may enable Spin Seebeck Effect studies in the in-plane geometry. - Highlights: • Unintentional thermal gradients along surface normal mitigated via butt-mounting. • Longitudinal/transverse magnetothermopower measured on many systems. • Anomalous Nernst Effect reduced. • Importance of magnetic anisotropy identified with angle-dependent measurements.

  13. Near room temperature ferromagnetism of copper phthalocyanine thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, XueYan, E-mail: xueyanadeline@163.com; Zheng, JianBang; Chen, Lei; Qiao, Kai; Xu, JiaWei; Cao, ChongDe

    2015-11-30

    Highlights: • The α-CuPc films without and with light Ni-doping were characterized by X-ray photoelectron spectroscopy to confirm the absence of other ferromagnetic impurities. • The α-CuPc film exhibited ferromagnetic hysteresis with saturation magnetization of ∼6.77 emu/cm{sup 3} and coercivity of ∼96 Oe at 280 K, while that of the Ni-doped α-CuPc film are ∼0.69 emu/cm{sup 3} and ∼113 Oe, respectively. • Through the density functional theory calculations, the origin of the ferromagnetism arise from Cu 3d states and N 2s2p electronic spin polarization, as well as p–d exchange coupling interactions, and spin-unbalanced electronic structure of C 2p induced by the π–π interactions. - Abstract: We reported near room temperature ferromagnetism of α-CuPc films without and with light Ni-doping. Two samples were characterized by X-ray photoelectron spectroscopy (XPS) to confirm the absence of other ferromagnetic impurities. The α-CuPc film exhibited ferromagnetic hysteresis with saturation magnetization of ∼6.77 emu/cm{sup 3} and coercivity of ∼96 Oe at 280 K, while that of the Ni-doped α-CuPc film are ∼0.69 emu/cm{sup 3} and ∼113 Oe, respectively. Through the density functional theory (DFT) calculations, the origin of the ferromagnetism arise from Cu 3d states and N 2s2p electronic spin polarization, as well as p-d exchange coupling interactions, and spin-unbalanced electronic structure of C 2p induced by the π–π interactions.

  14. Strain-Induced Ferromagnetism in Antiferromagnetic LuMnO3 Thin Films

    Science.gov (United States)

    White, J. S.; Bator, M.; Hu, Y.; Luetkens, H.; Stahn, J.; Capelli, S.; Das, S.; Döbeli, M.; Lippert, Th.; Malik, V. K.; Martynczuk, J.; Wokaun, A.; Kenzelmann, M.; Niedermayer, Ch.; Schneider, C. W.

    2013-07-01

    Single phase and strained LuMnO3 thin films are discovered to display coexisting ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (≈1μB), which is absent in bulk samples, is shown to display a magnetic moment distribution that is peaked at the highly strained substrate-film interface. We further show that the strain-induced ferromagnetism and the antiferromagnetic order are coupled via an exchange field, therefore demonstrating strained rare-earth manganite thin films as promising candidate systems for new multifunctional devices.

  15. Ferromagnetism in tetragonally distorted LaCoO3 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mehta, Virat Vasav; Liberati, Marco; Wong, Franklin J.; Chopdekar, Rajesh Vilas; Arenholz, Elke; Suzuki, Yuri

    2008-09-17

    Thin films of epitaxial LaCoO{sub 3} were synthesized on SrTiO{sub 3} and (La, Sr)(Al, Ta)O{sub 3} substrates varying the oxygen background pressure in order to evaluate the impact of epitaxial growth as well as oxygen vacancies on the long range magnetic order. The epitaxial constraints from the substrate impose a tetragonal distortion compared to the bulk form. X-ray absorption and x-ray magnetic circular dichroism measurements confirmed that the ferromagnetism arises from the Co ions and persists through the entire thickness of the film. It was found that for the thin films to show ferromagnetic order they have to be grown under the higher oxygen pressures, since a decrease in oxygen deposition pressure alters the film structure and suppresses ferromagnetism in the LaCoO{sub 3} films. A correlation of the structure and magnetism suggests that the tetragonal distortions induce the ferromagnetism.

  16. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

  17. Quantum-well-induced ferromagnetism in thin films

    DEFF Research Database (Denmark)

    Niklasson, A.M.N.; Mirbt, S.; Skriver, Hans Lomholt;

    1997-01-01

    We have used a first-principles Green's-function technique to investigate the magnetic properties of thin films of Rh, Pd, and Pt deposited on a fee Ag (001) substrate. We find that the magnetic moment of the film is periodically suppressed and enhanced as a function of film thickness....... The phenomenon is explained in terms of quantum-well states moving through the Fermi level with increasing film thickness....

  18. Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

    Institute of Scientific and Technical Information of China (English)

    LI Xi-Jun; ZHOU YI-Kai; KIM M.; KIMURA S.; TERAGUCHI N.; EMURA S.; HASEGAWA S.; ASAHI H.

    2005-01-01

    @@ Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 10K to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.

  19. Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    AU; ChakTong

    2010-01-01

    Ni-doped ZnO thin films (Ni concentration up to 10 mol%) were generated on Si (100) substrates by a sol-gel technique. The films showed wurtzite structure and no other phase was found. The chemical state of Ni was found to be bivalent by X-ray photoelectron spectroscopy. The results of magnetic measurements at room temperature indicated that the films were ferromagnetic, and magnetic moment decreased with rise of Ni concentration. The magnetization of Ni (10 mol%)-doped ZnO film annealed in nitrogen was lower than that annealed in argon, suggesting that the density of defects had an effect on ferromagnetism.

  20. Topological textures and their bifurcation processes in 2D ferromagnetic thin films

    Science.gov (United States)

    Cao, Jinlü; Yang, Guo-Hong; Jiang, Ying

    2016-10-01

    In this paper, by the use of the topological current theory, the topological structures and the dynamic processes in thin-film ferromagnetic systems are investigated directly from the viewpoint of topology. It is found that the topological charge of a thin-film ferromagnetic system can be changed by annihilation or creation processes of opposite polarized vortex-antivortex pairs taking place at space-time singularities of the normalized magnetization vector field of the system, the variation of the topological charge is integer and can further be expressed in terms of the Hopf indices and Brouwer degrees of the magnetization vector field around the singularities. Moreover, the change of the topological charge of the system is crucial to vortex core reversal processes in ferromagnetic thin films. With the help of the topological current theory and implicit function theorem, the processes of vortex merging, splitting as well as vortex core reversal are discussed in detail.

  1. High temperature ferromagnetism in cubic Mn-doped ZrO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Nguyen Hoa, E-mail: nguyenhong@snu.ac.kr [Nanomagnetism Laboratory, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Park, Chul-Kwon; Raghavender, A.T. [Nanomagnetism Laboratory, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Ruyter, Antoine [Laboratoire GREMAN, UMR 7347 CNRS - Universite F. Rabelais, Parc de Grandmont, 37200 Tours (France); Chikoidze, Ekaterina; Dumont, Yves [Laboratoire GEMaC, UMR 8635 Universite de Versailles St Quentin en Yvelines - CNRS, 45, Av. des Etats-Unis, 78035 Versailles Cedex (France)

    2012-09-15

    Theory has predicted that high temperature ferromagnetism (FM) should be found in cubic fake-diamonds, Mn-doped ZrO{sub 2}. Experimentally, it is shown that Mn-doped ZrO{sub 2} ceramics are not ferromagnetic, but the nanosized Mn-doped ZrO{sub 2} thin films grown on LaAlO{sub 3} substrates can be ferromagnets with T{sub C} above 400 K. The largest saturated magnetic moment (M{sub s}) is huge as of about 230 emu/cm{sup 3} for the Mn{sub 0.05}Zr{sub 0.95}O{sub 2} films, and it decreases as the Mn content increases. The intrinsic FM is strongly associated with the cubic structure of Mn-doped ZrO{sub 2}, and the Mn-Mn interactions via oxygen intermediates are important. No electrical conductivity is observed. Mn-doped ZrO{sub 2} thin films can be truly considered as excellent candidates for spintronic applications. - Highlights: Black-Right-Pointing-Pointer Mn-doped ZrO2 thin films can be ferromagnetic above room temperature. Black-Right-Pointing-Pointer Huge magnetic moment of 13.8 {mu}{sub B} per Mn is found in the sampledoping with 5% of Mn. Black-Right-Pointing-Pointer Magnetic force measurements confirm intrinsic ferromagnetism. Black-Right-Pointing-Pointer Important feedback to the theoretical work. Black-Right-Pointing-Pointer Good candidates for spintronics applications.

  2. Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qi I., E-mail: qiyang@stanford.edu [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Zhao, Jinfeng; Risbud, Subhash H. [Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616 (United States); Zhang, Li; Dolev, Merav [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Fried, Alexander D. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Marshall, Ann F. [Stanford Nanocharacterization Laboratory, Stanford University, Stanford, California 94305 (United States); Kapitulnik, Aharon [Department of Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)

    2014-02-24

    High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

  3. Ferromagnetic resonance study of MnAs/GaAs(1 1 1) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Repetto Llamazares, A.H.V. [CNEA - Centro Atomico Bariloche and Instituto Balseiro, UNCu (R8402AGP) San Carlos de Bariloche, Rio Negro (Argentina); Milano, J. [CNEA - Centro Atomico Bariloche and Instituto Balseiro, UNCu (R8402AGP) San Carlos de Bariloche, Rio Negro (Argentina)]. E-mail: milano@cab.cnea.gov.ar; Steren, L.B. [CNEA - Centro Atomico Bariloche and Instituto Balseiro, UNCu (R8402AGP) San Carlos de Bariloche, Rio Negro (Argentina); Garcia, V. [Institut des NanoSciences de Paris, UMR CNRS 7588, Universites Paris 6 et Paris 7, Campus Boucicaut - 140 rue de Lourmel - 75015 Paris (France); Marangolo, M. [Institut des NanoSciences de Paris, UMR CNRS 7588, Universites Paris 6 et Paris 7, Campus Boucicaut - 140 rue de Lourmel - 75015 Paris (France); Eddrief, M. [Institut des NanoSciences de Paris, UMR CNRS 7588, Universites Paris 6 et Paris 7, Campus Boucicaut - 140 rue de Lourmel - 75015 Paris (France); Etgens, V.H. [Institut des NanoSciences de Paris, UMR CNRS 7588, Universites Paris 6 et Paris 7, Campus Boucicaut - 140 rue de Lourmel - 75015 Paris (France)

    2007-09-01

    In this contribution we present a study of the magnetic properties of MnAs thin films grown over GaAs(1 1 1) substrates, performed by ferromagnetic resonance experiments. We have calculated the magneto-crystalline anisotropy of the system analyzing the angular dependence of the resonance field with the applied field direction. The anisotropy measured for these films is much smaller than the calculated for MnAs bulk samples and MnAs/GaAs(1 0 0) thin films. We propose different microscopic mechanism for addressing the change in the anisotropy.

  4. Cell culture arrays using micron-sized ferromagnetic ring-shaped thin films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Chen-Yu; Wei, Zung-Hang, E-mail: wei@pme.nthu.edu.tw [Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu City 300, Taiwan (China); Lai, Mei-Feng; Ger, Tzong-Rong [Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu City 300, Taiwan (China)

    2015-05-07

    Cell patterning has become an important technology for tissue engineering. In this research, domain walls are formed at the two ends of a ferromagnetic ring thin film after applying a strong external magnetic field, which can effectively attract magnetically labeled cells and control the position for biological cell. Magnetophoresis experiment was conducted to quantify the magnetic nanoparticle inside the cells. A ring-shaped magnetic thin films array was fabricated through photolithography. It is observed that magnetically labeled cells can be successfully attracted to the two ends of the ring-shaped magnetic thin film structure and more cells were attracted and further attached to the structures. The cells are co-cultured with the structure and kept proliferating; therefore, such ring thin film can be an important candidate for in-vitro biomedical chips or tissue engineering.

  5. Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering

    Energy Technology Data Exchange (ETDEWEB)

    Debbichi, M., E-mail: mourad_fsm@yahoo.fr [Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Souissi, M. [College of Arts and Science Nayriya, Dammam University, 31441 Dammam (Saudi Arabia); Fouzri, A. [Laboratoire Physico-Chimie des Matériaux, Unité de Service Commun de Recherche ‘‘High Resolution X-ray Diffractometer’’, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Schmerber, G. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) UMR 7504 CNRS-Université de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France); Said, M. [Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Alouani, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) UMR 7504 CNRS-Université de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France)

    2014-06-15

    Highlights: • ZnO:Cd thin film grown on c-sapphire substrate by MOCVD method. • RTFM in ZnO:Cd thin film is detected by SQUID magnetometer measurement. • DFT theory is conducted to elucidate the mechanism of RTFM in Cd-doped ZnO. - Abstract: Room-temperature ferromagnetism is detected in undoped and cadmium-doped ZnO (ZnO:Cd) thin film grown on c-plane sapphire substrate by metal–organic chemical vapor deposition method. To elucidate the origin of ferromagnetism, a theoretical study based on density functional theory is conducted, focusing on the role of the neutral cation vacancy on the appearance of magnetism in Cd-doped ZnO thin film. The calculations revealed that Cd substitution at Zn sites contributes to the long-ranged ferromagnetism in ZnO by lowering the formation energy of Zn vacancies and thereby stabilizing Zn vacancies from which the magnetic moments originate.

  6. Ferromagnetism in doped TiO{sub 2} thin films prepared by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Duhalde, S [Laboratorio de Ablacion Laser, Facultad de IngenierIa, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Torres, C E RodrIguez [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Vignolo, M F [Laboratorio de Ablacion Laser, Facultad de IngenierIa, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Golmar, F [Laboratorio de Ablacion Laser, Facultad de IngenierIa, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Chillote, C [Laboratorio de Bajas Temperaturas, Fac. de Ciencias Exactas, Universidad de Buenos Aires, Av. Int. Gueiraldes 2160, 1428 Buenos Aires (Argentina); Cabrera, A F [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina); Sanchez, F H [Dpto de Fisica-IFLP, Fac. Cs. Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata (Argentina)

    2007-04-15

    Transition-Metal-doped TiO{sub 2} thin films, with nominal composition Ti{sub 0.9}TM{sub 0.1}O{sub 2-{delta}} (TM = Mn, Fe, Co, Ni, Cu), were grown by pulsed laser deposition (PLD), in order to study the role of dopants in the origin and significance of room temperature ferromagnetism in these systems. The crystallographic structures and their magnetic properties were characterized and the experimental results are compared to ab-initio calculations previously reported. The films are ferromagnetic at room temperature in the cases of Fe, Co, Ni and even Cu impurities, but not in the case of Mn doping. Our results support the hypothesis that oxygen vacancies play a key role in the origin of magnetism in doped TiO{sub 2} films, and can explain the diversity of magnetic moments observed experimentally for films grown under different conditions.

  7. A contribution from the magnetoelastic effect to measured microwave permeability of thin ferromagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Iakubov, Igor T.; Kashurkin, Oleg Yu.; Lagarkov, Andrey N.; Maklakov, Sergey A. [Institute for Theoretical and Applied Electromagnetics RAS, Izhorskaya 13, Moscow 125412 (Russian Federation); Osipov, Alexey V., E-mail: osipov@eldyn.msk.ru [Institute for Theoretical and Applied Electromagnetics RAS, Izhorskaya 13, Moscow 125412 (Russian Federation); Rozanov, Konstantin N.; Ryzhikov, Ilya A.; Starostenko, Sergey N. [Institute for Theoretical and Applied Electromagnetics RAS, Izhorskaya 13, Moscow 125412 (Russian Federation)

    2012-10-15

    Microwave magnetic performance of thin ferromagnetic films is of interest in view of many technical problems. For measuring the microwave permeability, a shorted stripline technique is in common use. Recently, a coaxial technique has been developed for permeability measurements of films deposited onto a flexible substrate. The coaxial technique is reported to be advantageous over the conventional stripline method in wideband operating range and accuracy. In this paper, measurement results are presented which are obtained with these two techniques for Fe-N films. It is found that the magnetoelastic effect contributes greatly to the measured microwave permeability of the films. With the coaxial measurements under an external magnetic bias, this effect may be accounted for to estimate the permeability of a plane film sample. Additional information on the properties of the film can also be extracted from these data, such as estimations of average magnetic anisotropy field and of the magnetostriction constant of the film.

  8. Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

    Science.gov (United States)

    Lee, Hwachol; Sukegawa, Hiroaki; Liu, Jun; Ohkubo, Tadakatsu; Kasai, Shinya; Mitani, Seiji; Hono, Kazuhiro

    2015-07-01

    Perpendicularly magnetized flat thin films of antiperovskite Mn67Ga24N9 were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn70Ga30 target. The films showed a saturation magnetization of 80 -100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1-0.2 MJ/m3, and a Curie temperature of 660-740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn3GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D022-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.

  9. Coupled Lattice Polarization and Ferromagnetism in Multiferroic NiTiO 3 Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Varga, Tamas; Droubay, Timothy C.; Kovarik, Libor; Nandasiri, Manjula I.; Shutthanandan, Vaithiyalingam; Hu, Dehong; Kim, Bumsoo; Jeon, Seokwoo; Hong, Seungbum; Li, Yulan; Chambers, Scott A.

    2017-06-22

    Polarization-induced weak ferromagnetism has been predicted recently in LiNbO3-type MTiO3 (M = Fe, Mn, Ni). While coexisting ferroelectric polarization and ferromagnetism have been demonstrated in this family before, first in bulk FeTiO3, then in thin-film NiTiO3, the coupling of the two order parameters has not been confirmed. Here we report the stabilization of polar, ferromagnetic NiTiO3 by oxide epitaxy on LiNbO3 substrate utilizing tensile strain, and demonstrate the theory-predicted coupling between its polarization and ferromagnetism by x-ray magnetic circular dichroism under applied fields. The experimentally observed direction of ferroic ordering in the film is supported by simulation using phase-field approach. Our work validates symmetry-based criteria and first-principles calculations of the coexistence of ferroelectricity and weak ferromagnetism in MTiO3 transition metal titanates crystallizing in the LiNbO3 structure. It also demonstrates the applicability of epitaxial strain as a viable alternative to high-pressure crystal growth to stabilize metastable materials, and a valuable tuning parameter to simultaneously control two ferroic order parameters to create a multiferroic.

  10. Enhancement of room temperature ferromagnetic behavior of rf sputtered Ni-CeO2 thin films

    Science.gov (United States)

    Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Ravi, G.

    2016-12-01

    Ni-doped CeO2 thin films were prepared under Ar+ atmosphere on glass substrates using rf magnetron sputtering. To assess the properties of the prepared thin films, the influence of various amounts of Ni dopant on structural, morphological, optical, vibrational, compositional and magnetic properties of the CeO2 films were studied by using X-Ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL), micro-Raman, X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). XRD patterns for all the samples revealed the expected CeO2 cubic fluorite-type structure and Ni ions were uniformly distributed in the samples. AFM images of the prepared samples indicate high dense, columnar structure with uniform distribution of CeO2. Room-temperature photoluminescence (PL) and micro-Raman spectroscopic studies revealed an increase of oxygen vacancies with higher concentration of Ni in CeO2. XPS results confirm the presence of Ni2p, O1s and Ce and depict that cerium is present as both Ce4+ and Ce3+ oxidation states in Ce1-xNixO2 (x = 15%) thin film. Field dependent magnetization measurements revealed a paramagnetic behavior for pure CeO2, while a ferromagnetic behavior appeared when Ni is doped in CeO2 films. Doping dependent magnetization measurements suggest that the observed ferromagnetism is due to the presence of metallic Ni clusters with nanometric size and broad size distribution.

  11. Thickness dependent ferromagnetism in thermally decomposed NiO thin films

    Science.gov (United States)

    Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy

    2016-11-01

    We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50-300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (TA) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing TA, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing TA and changing annealing conditions.

  12. Electric field-controlled magnetization switching in Co/Pt thin-film ferromagnets

    Directory of Open Access Journals (Sweden)

    A. Siddique

    2016-12-01

    Full Text Available A study of dynamic and reversible voltage-controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is observed in a relatively thick film of 15 nm. A surface charge is induced by the formation of electrochemical double layer between the metallic thin film and non-aqueous lithium LiClO4 electrolyte to manipulate the magnetism. The change in the magnetic properties occurred by the application of an external electric field. As the negative voltage was increased, the coercivity and the switching magnetic field decreased thus activating magnetization switching. The results are envisaged to lead to faster and ultra-low-power magnetization switching as compared to spin-transfer torque (STT switching in spintronic devices.

  13. Coupled Lattice Polarization and Ferromagnetism in Multiferroic NiTiO 3 Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Varga, Tamas; Droubay, Timothy C.; Kovarik, Libor; Nandasiri, Manjula I. [Imaging; Shutthanandan, Vaithiyalingam; Hu, Dehong; Kim, Bumsoo [Materials; Department; Jeon, Seokwoo [Department; Hong, Seungbum [Materials; Department; Li, Yulan; Chambers, Scott A.

    2017-06-22

    Polarization-induced weak ferromagnetism (WFM) was demonstrated a few years back in LiNbO3-type compounds, MTiO3 (M = Fe, Mn, Ni). Although the coexistence of ferroelectric polarization and ferromagnetism has been demonstrated in this rare multiferroic family before, first in bulk FeTiO3, then in thin-film NiTiO3, the coupling of the two order parameters has not been confirmed Here, we report the stabilization of polar, ferromagnetic NiTiO3 by oxide epitaxy on a LiNbO3 substrate utilizing tensile strain and demonstrate the theoretically predicted coupling between its polarization and ferromagnetism by X-ray magnetic circular dichroism under applied fields. The experimentally observed direction of ferroic ordering in the film is supported by simulations using the phase-field approach. Our work validates symmetry-based criteria and first-principles calculations of the coexistence of ferroelectricity and WFM in MTiO3 transition metal titanates crystallizing in the LiNbO3 structure. It also demonstrates the applicability of epitaxial strain as a viable alternative to high-pressure crystal growth to stabilize metastable materials and a valuable tuning parameter to simultaneously control two ferroic order parameters to create a multiferroic. Multiferroic NiTiO3 has potential applications in spintronics where ferroic switching is used, such as new four-stage memories and electromagnetic switches.

  14. Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Zhenghe; Kim, Ki Wook [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nori, Sudhakar; Lee, Yi-Fang; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kumar, D. [Department of Mechanical Engineering, North Carolina A & T State University, Greensboro, North Carolina 27411 (United States); Wu, Fan [Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08540 (United States); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2015-10-28

    We report on the epitaxial growth and room-temperature ferromagnetic properties of MgO thin films deposited on hexagonal c-sapphire substrates by pulsed laser deposition. The epitaxial nature of the films has been confirmed by both θ-2θ and φ-scans of X-ray diffraction pattern. Even though bulk MgO is a nonmagnetic insulator, we have found that the MgO films exhibit ferromagnetism and hysteresis loops yielding a maximum saturation magnetization up to 17 emu/cc and large coercivity, H{sub c} = 1200 Oe. We have also found that the saturation magnetization gets enhanced and that the crystallization degraded with decreased growth temperature, suggesting that the origin of our magnetic coupling could be point defects manifested by the strain in the films. X-ray (θ-2θ) diffraction peak shift and strain analysis clearly support the presence of strain in films resulting from the presence of point defects. Based on careful investigations using secondary ion mass spectrometer and X-ray photoelectron spectroscopy studies, we have ruled out the possibility of the presence of any external magnetic impurities. We discuss the critical role of microstructural characteristics and associated strain on the physical properties of the MgO films and establish a correlation between defects and magnetic properties.

  15. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    Science.gov (United States)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  16. Room temperature magnetocaloric effect in Ni-Mn-In-Cr ferromagnetic shape memory alloy thin films

    Science.gov (United States)

    Akkera, Harish Sharma; Singh, Inderdeep; Kaur, Davinder

    2017-02-01

    The influence of Cr substitution for In on the martensitic phase transformation and magnetocaloric effect (MCE) has been investigated in Ni-Mn-Cr-In ferromagnetic shape memory alloy (FSMA) thin films fabricated by magnetron sputtering. Temperature dependent magnetization (M-T) measurements demonstrated that the martensitic transformation temperatures (TM) monotonously increase with the increase of Cr content due to change in valence electron concentration (e/a) and cell volume. From the study of isothermal magnetization curves (M-H), magnetocaloric effect around the martensitic transformation has been investigated in these FSMA thin films. The magnetic entropy change ∆SM of 7.0 mJ/cm3-K was observed in Ni51.1Mn34.9In9.5Cr4.5 film at 302 K in an applied field of 2 T. Further, the refrigerant capacity (RC) was also calculated for all the films in an applied field of 2 T. These findings indicate that the Cr doped Ni-Mn-In FSMA thin films are potential candidates for room temperature micro-length-scale magnetic refrigeration applications.

  17. Gilbert damping constant of FePd alloy thin films estimated by broadband ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Kawai T.

    2014-07-01

    Full Text Available Magnetic relaxation of FePd alloy epitaxial thin films with very flat surfaces prepared on MgO(001 substrate are measured by in-plane broadband ferromagnetic resonance (FMR. Magnetic relaxation is investigated as Δω for FMR absorption peak by frequency sweep measurements. ΔH is calculated by using the measured Δω. Gilbert damping constant, α, is estimated by employing a straight line fitting of the resonant frequency dependence of ΔH. The α value for an FePd film deposited at 200 ˚C, which shows disordered A1 structure, is 0.010 and ΔH0, which is frequency independent part of ΔH, is 10 Oe. The α value for a film annealed at 400 ˚C, which shows partially L10 ordered structure (S=0.32, is 0.013, which is slightly larger than that for the disorder A1 structure film. However, ΔH0 for the annealed film is 85 Oe, which is much larger than that for the film with disordered structure. The results show that the magnetic relaxation of the 400 ˚C annealed film is mainly dominated by ΔH0, which is related with magnetic in-homogeneity caused by the appearance of perpendicular anisotropy of partially ordered phase.

  18. Defect engineered d{sup 0} ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com, E-mail: sghoshphysics@gmail.com; Sarkar, Ayan [Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Technology Campus, Block JD-2, Sector III, Salt Lake City, Kolkata 700 098 (India); Ghosh, Shyamsundar, E-mail: gobinda.gk@gmail.com, E-mail: sghoshphysics@gmail.com [Department of Physics, Bejoy Narayan Mahavidyalaya, P.O. Itachuna, Hooghly 712 147 (India); Mandal, Guruprasad; Mukherjee, Goutam Dev [Department of Physical Sciences, Indian Institute of Science Education and Research, Kolkata, Mohanpur Campus, BCKV Campus Main Office, Nadia 741 252 (India); Manju, Unnikrishnan [Materials Characterization Division, CSIR-Central Glass and Ceramic Research Institute, 2A & 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700 032 (India); Banu, Nasrin; Dev, Bhupendra Nath [Department of Material Science, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Jadavpur, Kolkata 700 032 (India)

    2015-08-21

    Origin of unexpected defect engineered room-temperature ferromagnetism observed in tin-doped indium oxide (ITO) nanostructures (Nanowires, Nano-combs) and nanocrystalline thin films fabricated by pulsed laser deposition has been investigated. It is found that the ITO nanostructures prepared under argon environment exhibit strongest ferromagnetic signature as compared to that nanocrystalline thin films grown at oxygen. The evidence of singly ionized oxygen vacancy (V{sub 0}{sup +}) defects, obtained from various spectroscopic measurements, suggests that such V{sub 0}{sup +} defects are mainly responsible for the intrinsic ferromagnetic ordering. The exchange interaction of the defects provides extensive opportunity to tune the room-temperature d{sup 0} ferromagnetism and optical properties of ITOs.

  19. Materials optimization and ghz spin dynamics of metallic ferromagnetic thin film heterostructures

    Science.gov (United States)

    Cheng, Cheng

    Metallic ferromagnetic (FM) thin film heterostructures play an important role in emerging magnetoelectronic devices, which introduce the spin degree of freedom of electrons into conventional charge-based electronic devices. As the majority of magnetoelectronic devices operate in the GHz frequency range, it is critical to understand the high-frequency magnetization dynamics in these structures. In this thesis, we start with the static magnetic properties of FM thin films and their optimization via the field-sputtering process incorporating a specially designed in-situ electromagnet. We focus on the origins of anisotropy and hysteresis/coercivity in soft magnetic thin films, which are most relevant to magentic susceptibility and power dissipation in applications in the sub-GHz frequency regime, such as magnetic-core integrated inductors. Next we explore GHz magnetization dynamics in thin-film heterostructures, both in semi-infinite samples and confined geometries. All investigations are rooted in the Landau-Lifshitz-Gilbert (LLG) equation, the equation of motion for magnetization. The phenomenological Gilbert damping parameter in the LLG equation has been interpreted, since the 1970's, in terms of the electrical resistivity. We present the first interpretation of the size effect in Gilbert damping in single metallic FM films based on this electron theory of damping. The LLG equation is intrinsically nonlinear, which provides possibilities for rf signal processing. We analyze the frequency doubling effect at small-angle magnetization precession from the first-order expansion of the LLG equation, and demonstrate second harmonic generation from Ni81 Fe19 (Permalloy) thin film under ferromagnetic resonance (FMR), three orders of magnitude more efficient than in ferrites traditionally used in rf devices. Though the efficiency is less than in semiconductor devices, we provide field- and frequency-selectivity in the second harmonic generation. To address further the

  20. Ferromagnetic MnGaN thin films with perpendicular magnetic anisotropy for spintronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hwachol; Sukegawa, Hiroaki, E-mail: sukegawa.hiroaki@nims.go.jp; Ohkubo, Tadakatsu; Kasai, Shinya [National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Liu, Jun; Mitani, Seiji; Hono, Kazuhiro [National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8577 (Japan)

    2015-07-20

    Perpendicularly magnetized flat thin films of antiperovskite Mn{sub 67}Ga{sub 24}N{sub 9} were grown on an MgO(001) substrate by reactive sputtering using an argon/1% nitrogen gas mixture and a Mn{sub 70}Ga{sub 30} target. The films showed a saturation magnetization of 80 –100 kA/m, an effective perpendicular magnetic anisotropy (PMA) energy of 0.1–0.2 MJ/m{sup 3}, and a Curie temperature of 660–740 K. Upon increasing the N composition, the films transformed from ferromagnetic to antiferromagnetic as expected in the stoichiometric Mn{sub 3}GaN phase. Point contact Andreev reflection spectroscopy revealed that the ferromagnetic MnGaN has a current spin polarization of 57%, which is comparable to D0{sub 22}-MnGa. These findings suggest that MnGaN is a promising PMA layer for future spintronics devices.

  1. Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

    Directory of Open Access Journals (Sweden)

    Yu-Jun Zhang

    2015-07-01

    Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

  2. Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

    2015-06-24

    Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

  3. Exchange anisotropy and the dynamic phase transition in thin ferromagnetic Heisenberg films.

    Science.gov (United States)

    Jang, Hyunbum; Grimson, Malcolm J; Hall, Carol K

    2003-10-01

    Monte Carlo simulations have been performed to investigate the dependence of the dynamic phase behavior on the bilinear exchange anisotropy of a classical Heisenberg spin system. The system under consideration is a planar thin ferromagnetic film with competing surface fields subject to a pulsed oscillatory external field. The results show that the films exhibit a single discontinuous dynamic phase transition (DPT) as a function of the anisotropy of the bilinear exchange interaction in the Hamiltonian. Furthermore, there is no evidence of stochastic resonance associated with the DPT. These results are in marked contrast to the continuous DPT observed in the same system as a function of temperature and applied field strength for a fixed bilinear exchange anisotropy.

  4. Room-temperature ferromagnetism in V-doped GaN thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Souissi, M.; El Jani, B. [Unite de Recherche sur les Hetero-Epitaxies et Applications, Faculte des Sciences de Monastir, 5000 Monastir (Tunisia); Schmerber, G.; Derory, A. [Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS), UMR7504 CNRS-UDS, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France)

    2010-09-15

    V-doped GaN thin films were grown on c-sapphire substrate by metal organic chemical vapour deposition method (MOCVD). We have used vanadium tetrachloride (VCl{sub 4}) to intentionally incorporate vanadium (V) during the crystal growth of GaN. X-ray diffraction measurements revealed no secondary phase in the samples. Magnetic experiments using superconducting quantum interference device (SQUID) showed clear hysteresis loop in magnetization versus applied field (M -H) curves for V-doped GaN films. The ferromagnetic behavior was evidenced at 300 K, implying the Curie temperature to be over 300 K. Strong and broad blue-luminescent band (centered at 2.6 eV) is induced by the V doping in GaN. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Room-temperature ferromagnetism in Co-doped ZnO thin films prepared by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Belghazi, Y. [Laboratoire de Physique des Materiaux, Faculte des Sciences, B.P. 1014, Rabat (Morocco); IPCMS-GMI (UMR 7504 du CNRS) (ECPM-ULP), 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2 (France); Schmerber, G. [IPCMS-GMI (UMR 7504 du CNRS) (ECPM-ULP), 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2 (France); Colis, S. [IPCMS-GMI (UMR 7504 du CNRS) (ECPM-ULP), 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2 (France); Rehspringer, J.L. [IPCMS-GMI (UMR 7504 du CNRS) (ECPM-ULP), 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2 (France); Berrada, A. [Laboratoire de Physique des Materiaux, Faculte des Sciences, B.P. 1014, Rabat (Morocco); Dinia, A. [IPCMS-GMI (UMR 7504 du CNRS) (ECPM-ULP), 23 rue du Loess, BP 43, F-67034 Strasbourg Cedex 2 (France)]. E-mail: aziz.dinia@ipcms.u-strasbg.fr

    2007-03-15

    We report on room-temperature ferromagnetism in Co-doped ZnO thin films grown onto Si(100) and SiO{sub 2} substrates using the spin-coating technique. X-ray diffraction measurements show that the films have the wurtzite structure with a preferential orientation along the c-axis. UV-Visible spectroscopy has shown that the Co{sup 2+} ions are substituted to Zn{sup 2+} ions in ZnO matrix. The analysis of the magnetization measurements indicates that the observed ferromagnetism in ZnO and Co-doped ZnO films is extrinsic and can be due to a pollution.

  6. Unexpected large room-temperature ferromagnetism in porous Cu{sub 2}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xue [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

    2015-05-15

    Porous Cu{sub 2}O films have been fabricated on porous anodic alumina substrates using DC-reactive magnetron sputtering with pure Cu targets, and unexpectedly large room temperature ferromagnetism has been observed in the films. The maximum saturation magnetic moment along the out-of-plane direction was as high as 94 emu/cm{sup 3}. Photoluminescence spectra show that the ferromagnetism originates with oxygen vacancies. The ferromagnetism could be adjusted by changing the concentration of oxygen vacancies through annealing in an oxygen atmosphere. These observations suggest that the origin of the ferromagnetism is due to coupling between oxygen vacancies with local magnetic moments in the porous Cu{sub 2}O films, which can occur either directly through exchange interactions between oxygen vacancies, or through the mediation of conduction electrons. Such a ferromagnet without the presence of any ferromagnetic dopant may find applications in spintronic devices. - Highlights: • Porous Cu{sub 2}O films were deposited on porous anodic alumina (PAA) substrates. • Significant room-temperature ferromagnetism has been observed in porous Cu{sub 2}O films. • Ferromagnetism of Cu{sub 2}O films exhibited different magnetic signals with the field. • The saturation magnetization is 94 emu/cm{sup 3} with an out-of-plane.

  7. Interplay between carrier and cationic defect concentration in ferromagnetism of anatase Ti1-xTaxO2 thin films

    Directory of Open Access Journals (Sweden)

    A. Roy Barman

    2012-03-01

    Full Text Available Thin films of Ta incorporated TiO2 grown by pulsed laser deposition under specific growth conditions show room temperature ferromagnetism. Ta introduces carriers and concomitantly cationic defects, the combination of which leads to ferromagnetism. In this paper, we report on the dependence of the carrier and cationic defect density (compensation on various parameters such as oxygen growth pressure, temperature and Ta concentration. Most likely, the Ti vacancies act as magnetic centers and the free electrons help with the exchange leading to ferromagnetism via Ruderman-Kittel-Kasuya-Yosida mechanism.

  8. Thin perovskite-type ferromagnetic film (La,Sr)CoO3

    Science.gov (United States)

    Łoziński, A.

    2016-01-01

    Properties of materials having a perovskite-type oxide crystal structure ABO3 can easily be modified by means of partial substitution of cations located at A or B sites. Nonstoichiometric lanthanum-strontium cobalt oxides (La,Sr)CoO3 also referred to as LSCO exhibit electrical conductivity and ferromagnetic properties. Perovskite-type compounds LaCoO3 and SrCoO3 can form solid solutions in every ratios to each other. Notation (La,Sr)CoO3, or La(1-x)SrxCoO3 means that some lanthanum ions are substituted with the strontium ones at A sites of crystal cell. This paper describes a sol-gel manufacturing process of LSCO thin films, presents measurements of their resistivity vs. composition, shows thermal coefficient of selected composition resistivity as well as its magnetoresistive properties.

  9. Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

    KAUST Repository

    Xing, G. Z.

    2014-05-23

    We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

  10. Ferromagnetism, variable range hopping, and the anomalous Hall effect in epitaxial Co:ZnO thin film

    Institute of Scientific and Technical Information of China (English)

    Bai Hong-Liang; Chen Yan-Xue; Mei Liang-Mo; He Shu-Min; Xu Tong-Shuai; Liu Guo-Lei; Yan Shi-Shen; Zhu Da-Peng; Dai Zheng-Kun; Yang Feng-Fan; Dai You-Yong

    2012-01-01

    A series of high quality single crystalline epitaxial Zn0.95Co0.05O thin films is prepared by molecular beam epitaxy.Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 1018 cm-3- 1020 cm-3 by changing the oxygen partial pressure during film growth.The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature.The ferromagnetism can be maintained up to room temperature.However,the anomalous Hall effect is observed only at low temperature and disappears above 160 K.This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.

  11. Magnetoelastic coupling in multilayered ferroelectric/ferromagnetic thin films: A quantitative evaluation

    Science.gov (United States)

    Chiolerio, A.; Quaglio, M.; Lamberti, A.; Celegato, F.; Balma, D.; Allia, P.

    2012-08-01

    The electrical control of magnetization in a thin film, achieved by means of magnetoelastic coupling between a ferroelectric and a ferromagnetic layer represents an attractive way to implement magnetic information storage and processing within logical architectures known as Magnetic Quantum Cellular Automata (MQCA). Such systems have been addressed as multiferroics. We exploited cost-effective techniques to realize multi-layered multiferroic systems, such as sol-gel deposition and RF sputtering, introducing a specific technique to control the crystal structure and film roughness effect on the magnetic domain wall motion and reconfiguration, induced by magnetoelastic coupling, by evaluating the 2-dimensional statistical properties of enhanced MFM matrices. A RF sputtered 50-nm-thick Co layer on a Si/SiO2/Si3N4/Ti/Pt/PbTiO3/Pb(Zr0.53Ti0.47)O3 substrate was realized, exploiting two differently engineered PZT nano-crystalline structures and the conditions leading to a favorable compromise in order to realize functional devices were elucidated.

  12. Magnetoelastic coupling in multilayered ferroelectric/ferromagnetic thin films: A quantitative evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Chiolerio, A., E-mail: alessandro.chiolerio@iit.it [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Turin (Italy); Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, IT-10129 Turin (Italy); Quaglio, M. [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, IT-10129 Turin (Italy); Lamberti, A. [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Turin (Italy); Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, IT-10129 Turin (Italy); Celegato, F. [Electromagnetism Division, INRIM, Strada delle Cacce 91, IT-10135 Turin (Italy); Balma, D.; Allia, P. [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Turin (Italy)

    2012-08-01

    The electrical control of magnetization in a thin film, achieved by means of magnetoelastic coupling between a ferroelectric and a ferromagnetic layer represents an attractive way to implement magnetic information storage and processing within logical architectures known as Magnetic Quantum Cellular Automata (MQCA). Such systems have been addressed as multiferroics. We exploited cost-effective techniques to realize multi-layered multiferroic systems, such as sol-gel deposition and RF sputtering, introducing a specific technique to control the crystal structure and film roughness effect on the magnetic domain wall motion and reconfiguration, induced by magnetoelastic coupling, by evaluating the 2-dimensional statistical properties of enhanced MFM matrices. A RF sputtered 50-nm-thick Co layer on a Si/SiO{sub 2}/Si{sub 3}N{sub 4}/Ti/Pt/PbTiO{sub 3}/Pb(Zr{sub 0.53}Ti{sub 0.47})O{sub 3} substrate was realized, exploiting two differently engineered PZT nano-crystalline structures and the conditions leading to a favorable compromise in order to realize functional devices were elucidated.

  13. Unexpected observation of spatially separated Kondo scattering and ferromagnetism in Ta alloyed anatase TiO2 thin films.

    Science.gov (United States)

    Sarkar, T P; Gopinadhan, K; Motapothula, M; Saha, S; Huang, Z; Dhar, S; Patra, A; Lu, W M; Telesio, F; Pallecchi, I; Ariando; Marré, D; Venkatesan, T

    2015-08-12

    We report the observation of spatially separated Kondo scattering and ferromagnetism in anatase Ta0.06Ti0.94O2 thin films as a function of thickness (10-200 nm). The Kondo behavior observed in thicker films is suppressed on decreasing thickness and vanishes below ~25 nm. In 200 nm film, transport data could be fitted to a renormalization group theory for Kondo scattering though the carrier density in this system is lower by two orders of magnitude, the magnetic entity concentration is larger by a similar magnitude and there is strong electronic correlation compared to a conventional system such as Cu with magnetic impurities. However, ferromagnetism is observed at all thicknesses with magnetic moment per unit thickness decreasing beyond 10 nm film thickness. The simultaneous presence of Kondo and ferromagnetism is explained by the spatial variation of defects from the interface to surface which results in a dominantly ferromagnetic region closer to substrate-film interface while the Kondo scattering is dominant near the surface and decreasing towards the interface. This material system enables us to study the effect of neighboring presence of two competing magnetic phenomena and the possibility for tuning them.

  14. Room-Temperature Ferromagnetism of Co-Doped CeO2 Thin Films on Si(111) substrates

    Institute of Scientific and Technical Information of China (English)

    SONG Yuan-Qiang; ZHANG Huai-Wu; WEN Qi-Ye; LI Yuan-Xun; John Q. Xiao

    2007-01-01

    @@ Using Co2O3 as the Co source, doped cerium oxide thin films with the composition of Ce0.97Co0.03O2-δ (CCO)are deposited on Si(111) and glass substrates by pulse laser deposition technique. X-ray diffraction reveals that CCO films with (111) preferential orientation are grown on Si, while the film on glass is polycrystalline with nanocrystal. X-ray photoelectron spectroscopy shows that the Co displaces the Ce atom and exists in high spin state rather than low spin state, which contributes to the room-temperature ferromagnetism confirmed by vibration sample magnetometer.

  15. Ferromagnetic resonance in thin films submitted to multiaxial stress state: application of the uniaxial equivalent stress concept and experimental validation

    Science.gov (United States)

    Gueye, M.; Zighem, F.; Belmeguenai, M.; Gabor, M.; Tiusan, C.; Faurie, D.

    2016-07-01

    In this paper a unique expression of the anisotropy field induced by any multiaxial stress state in a magnetic thin film and probed by ferromagnetic resonance is derived. This analytical development has been made using the uniaxial equivalent stress concept, for which correspondances between definitions given by different authors in the literature is found. The proposed model for the anisotropy field has been applied to \\text{C}{{\\text{o}}2}\\text{FeAl} thin films (25 nm) stressed both by piezoelectric actuation (non-equi-biaxial) or by bending tests (uniaxial) and measured with a broadband ferromagnetic resonance technique. The overall exprimental data can be easily plotted on a unique graph from which the magnetostriction coefficient has been estimated.

  16. Spectroscopic study of Zn{sub 1−x}Co{sub x}O thin films showing intrinsic ferromagnetism

    Energy Technology Data Exchange (ETDEWEB)

    Gautam, S.; Thakur, P. [Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Bazylewski, P.; Bauer, R. [Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, SK, S7N 5E2 Canada (Canada); Singh, A.P.; Kim, J.Y. [Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Subramanian, M.; Jayavel, R. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Asokan, K. [Inter-University Accelerator Centre, JNU Campus, New Delhi 110 067 (India); Chae, K.H., E-mail: khchae@kist.re.kr [Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Chang, G.S., E-mail: gapsoo.chang@usask.ca [Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, SK, S7N 5E2 Canada (Canada)

    2013-06-15

    Dilute magnetic semiconductors are widely studied due to their potential applications in spin-resolved electronics. We report the direct evidences of intrinsic ferromagnetism in the primarily ferromagnetic ZnO:Co thin films using near-edge X-ray absorption fine structure (NEXAFS) and soft X-ray magnetic circular dichroism (XMCD). The single phase Zn{sub 1−x}Co{sub x}O thin films with nominal compositions (0.00 ≤ x ≤ 0.15) were synthesized by a spray pyrolysis technique, which exhibit room temperature ferromagnetism as revealed by alternating gradient force magnetometer (AGFM) measurements. The spectroscopic measurements indicate that most of Co dopants have substituted for Zn sites in ZnO matrix and they are present in divalent Co{sup 2+} (d{sup 7}) state with tetrahedral symmetry according to the atomic multiplet calculations. The O 1s NEXAFS spectra suggest strong hybridization between O 2p and Co 3d electrons within ZnO matrix. The Co 2p XMCD measurements rule out the magnetism due to the presence of Co clusters, and show that Co–O–Co bonding provides localized magnetic moments leading to ferromagnetism. - Highlights: • We have studied the electronic and magnetic properties of ZnO:Co thin films. • The study uses X-ray absorption and magnetic circular dichroism spectroscopies. • Co dopants substitute for Zn sites in ZnO matrix and are divalent Co{sup 2+}. • Measurements indicate Co clusters are not formed. • Co–O–Co bonding provide localized magnetic moments leading to ferromagnetism.

  17. Interplay between electronic transport and magnetic order in ferromagnetic magnetic manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hundley, M.F.; Neumeier, J.J.; Heffner, R.H.; Jia, Q.X.; Wu, X.D.; Thompson, J.D.

    1997-05-01

    The transition metal oxides La{sub 1{minus}x}A{sub x}MnO{sub 3} (A = Ba, Ca, or Sr) order ferromagnetically with Curie temperatures ranging from as low as 50 K to well above room temperature. Magnetic order in these compounds results in a concomitant metal-insulator transition. The feature displayed by the manganites that is most important technologically is the extremely large negative magnetoresistance that achieves its largest values near the magnetic ordering temperature. Qualitatively, this colossal magnetoresistance (CMR) phenomenon involves the suppression of the relatively sharp maximum in the resistivity that is centered at T{sub C}. When considered collectively, the anomalous temperature-dependent transport properties, the CMR effect, and the magnetically ordered ground state indicate that a novel interplay between magnetism and electronic transport occurs in the manganites. General features of the magnetic-field and temperature-dependent electrical resistivity and magnetization as displayed by PLD-grown thin films are examined. Particular emphasis is placed on what these measurements tell us about the conduction process both above and below the magnetic ordering temperature.

  18. Perpendicular Magnetic Anisotropy in Amorphous Ferromagnetic CoSiB/Pd Thin-Film Layered Structures.

    Science.gov (United States)

    Jung, Sol; Yim, Haein

    2015-10-01

    Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd multilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 Å/Pd 14 Å], and [CoSiB 9 Å/Pd 14 Å], multilayers, respectively. The PMA arises from tCoSiB = 3 Å to tCoSiB = 9 Å and disappears after tCoSiB = 9 Å.

  19. Room temperature ferromagnetism in epitaxial Cr{sub 2}O{sub 3} thin films grown on r-sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Punugupati, Sandhyarani, E-mail: spunugu@ncsu.edu; Narayan, Jagdish; Hunte, Frank [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-05-21

    We report on the epitaxial growth and magnetic properties of Cr{sub 2}O{sub 3} thin films grown on r-sapphire substrate using pulsed laser deposition. The X-ray diffraction (XRD) (2θ and Φ) and TEM characterization confirm that the films are grown epitaxially. The r-plane (011{sup ¯}2) of Cr{sub 2}O{sub 3} grows on r-plane of sapphire. The epitaxial relations can be written as [011{sup ¯}2] Cr{sub 2}O{sub 3} ‖ [011{sup ¯}2] Al{sub 2}O{sub 3} (out-of-plane) and [1{sup ¯}1{sup ¯}20] Cr{sub 2}O{sub 3} ‖ [1{sup ¯}1{sup ¯}20] Al{sub 2}O{sub 3} (in-plane). The as-deposited films showed ferromagnetic behavior up to 400 K but ferromagnetism almost vanishes with oxygen annealing. The Raman spectroscopy data together with strain measurements using high resolution XRD indicate that ferromagnetism in r-Cr{sub 2}O{sub 3} thin films is due to the strain caused by defects, such as oxygen vacancies.

  20. Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

    Energy Technology Data Exchange (ETDEWEB)

    Roqan, I. S., E-mail: iman.roqan@kaust.edu.sa; Venkatesh, S.; Zhang, Z.; Hussain, S.; Bantounas, I.; Flemban, T. H.; Schwingenschlogl, U. [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Franklin, J. B.; Zou, B.; Petrov, P. K.; Ryan, M. P.; Alford, N. M. [Department of Materials and London Centre for Nanotechnology, Imperial College London, London SW7 2AZ (United Kingdom); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

    2015-02-21

    We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline Gd{sub x}Zn{sub 1−x}O thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μ{sub B} per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.

  1. Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

    KAUST Repository

    Roqan, Iman S.

    2015-02-21

    We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.

  2. Synthesis of colloidal Mn2+:ZnO quantum dots and high-TC ferromagnetic nanocrystalline thin films.

    Science.gov (United States)

    Norberg, Nick S; Kittilstved, Kevin R; Amonette, James E; Kukkadapu, Ravi K; Schwartz, Dana A; Gamelin, Daniel R

    2004-08-04

    We report the synthesis of colloidal Mn(2+)-doped ZnO (Mn(2+):ZnO) quantum dots and the preparation of room-temperature ferromagnetic nanocrystalline thin films. Mn(2+):ZnO nanocrystals were prepared by a hydrolysis and condensation reaction in DMSO under atmospheric conditions. Synthesis was monitored by electronic absorption and electron paramagnetic resonance (EPR) spectroscopies. Zn(OAc)(2) was found to strongly inhibit oxidation of Mn(2+) by O(2), allowing the synthesis of Mn(2+):ZnO to be performed aerobically. Mn(2+) ions were removed from the surfaces of as-prepared nanocrystals using dodecylamine to yield high-quality internally doped Mn(2+):ZnO colloids of nearly spherical shape and uniform diameter (6.1 +/- 0.7 nm). Simulations of the highly resolved X- and Q-band nanocrystal EPR spectra, combined with quantitative analysis of magnetic susceptibilities, confirmed that the manganese is substitutionally incorporated into the ZnO nanocrystals as Mn(2+) with very homogeneous speciation, differing from bulk Mn(2+):ZnO only in the magnitude of D-strain. Robust ferromagnetism was observed in spin-coated thin films of the nanocrystals, with 300 K saturation moments as large as 1.35 micro(B)/Mn(2+) and T(C) > 350 K. A distinct ferromagnetic resonance signal was observed in the EPR spectra of the ferromagnetic films. The occurrence of ferromagnetism in Mn(2+):ZnO and its dependence on synthetic variables are discussed in the context of these and previous theoretical and experimental results.

  3. Magnetotransport Methods to Probe Surface States of Topological Insulator Thin Films and Topological Insulator/Ferromagnet (TI/FM) Heterostructures

    Science.gov (United States)

    Kumar, Raj

    confirmed by the cos(theta) dependence of field titled MR measurements on the Bi2Se3 thin films. No switching in the AMR or hysteresis behavior in the MR was observed in control experiments performed on non TI materials with superconducting electrodes and metal electrodes on Bi2Se3 TI films. The growth and characterization of Bi2Se3/Bi 2Se3/La0.70Sr0.30MnO3 (TI/FM), a topological insulator/ferromagnet heterostructure is discussed in the last part of the thesis. We have grown Bi2Se3/Bi2Se 3/La0.70Sr0.30MnO3 (TI/FM) heterostructures by the method of pulsed laser deposition. Bi2Se3/La 0.70Sr0.30MnO3 (LSMO) is a strong ferromagnetic material with Tc ˜ 350 K and Bi2Se3 is the most studied topological insulator. XRD and phi scan measurements of Bi2Se3/La 0.70Sr0.30MnO3 (TI/FM) heterostructure showed that epitaxial thin films of Bi2Se3 were grown on the LSMO template. Strong in-plane magnetization was confirmed by magnetometry measurements of the Bi2Se3/LSMO heterostructure. Magnetotransport measurements showed a distorted weak anti-localization effect with hysteretic behavior due to interface induced ferromagnetism in the Bi2Se 3 TI films.

  4. Diffusive Spin Dynamics in Ferromagnetic Thin Films with a Rashba Interaction

    KAUST Repository

    Wang, Xuhui

    2012-03-13

    In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The misalignment between the magnetization and the nonequilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, i.e., T=T Sy×m+T Sm×(y×m). Numerical simulations on a two-dimensional nanowire consider the impact of diffusion on the Rashba torque and reveal a large enhancement to the ratio T/T S for thin wires. Our theory provides an explanation for the mechanism driving the magnetization switching in a single ferromagnet as observed in the recent experiments. © 2012 American Physical Society.

  5. High-temperature ferromagnetism in Zn{sub 1-} {sub x} Mn {sub x} O semiconductor thin films

    Energy Technology Data Exchange (ETDEWEB)

    Theodoropoulou, Nikoleta [Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)]. E-mail: nineta@mit.edu; Misra, Vinith [Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Philip, John [Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); LeClair, Patrick [Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Berera, Geetha P. [Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Moodera, Jagadeesh S. [Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Satpati, Biswarup [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India); Som, Tapobrata [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)

    2006-05-15

    Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in Zn{sub 1-} {sub x} Mn {sub x} O thin films grown on Al{sub 2}O{sub 3} and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8 {mu} {sub B}/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin-polarized and participate in the observed ferromagnetic behavior.

  6. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yu-Min, E-mail: ymhu@nuk.edu.tw; Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Li, Sih-Sian [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2015-05-07

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu{sup 2+} state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu{sup 1+} ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites.

  7. Ion-Irradiation-Induced Ferromagnetism in Undoped ZnO Thin Films

    Science.gov (United States)

    2013-01-01

    Ion-irradiation-induced ferromagnetism in undoped ZnO thin filmsq Siddhartha Mal a,⇑, Sudhakar Nori a, J. Narayan a, J.T. Prater b, D.K. Avasthi c...S, Narayan J, Nori S, Prater JT, Kumar D. Solid State Commun 2010;150:1660. [8] Mal S, Nori S, Jin C, Narayan J, Nellutla S, Smirnov AI, et al. J

  8. Ferromagnetism in post-annealed sputtered Cr-doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ait-El-Aoud, Yassine; Hickey, Mark C.; Akyurtlu, Alkim [Department of Electrical and Computer Engineering, Center for Electromagnetic Materials and Optical Systems, University of Massachusetts, Lowell, MA (United States); Kussow, Adil-Gerai [Department of Physics, University of Massachusetts, Lowell, MA (United States)

    2013-12-15

    In the present work, we have studied the effect of a post-annealing process on the magnetic properties of thin films of Cr-doped indium oxide, In{sub 2-x}Cr{sub x}O{sub 3-{delta}}. Samples with low stoichiometric oxygen deficiency, {delta}, which is required for ferromagnetic behavior, were fabricated using a DC/RF magnetron sputtering method. The post-annealing process described in this paper allows control of the oxygen deficiency. This method has led to samples which show clear ferromagnetic behavior at both low temperatures and at room temperature with saturation magnetic moments up to {proportional_to}1.5 {mu}{sub B}/Cr-atoms. The measured high Curie temperature, T{sub C} {proportional_to} 740 K, justifies the indirect electron-mediated ferromagnetic coupling of the spins of Cr ions. The ferromagnetic coupling was found to be mostly a bulk effect, which is not affected by the surface of the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Room temperature ferromagnetism of Mn-doped SnO{sub 2} thin films fabricated by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Xiao Yuhua [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China)], E-mail: xiaoyh04@lzu.cn; Ge Shihui; Xi Li; Zuo Yalu; Zhou Xueyun; Zhang Bangmin; Zhang Li [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Li Chengxian; Han Xiufeng; Wen Zhenchao [State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

    2008-09-15

    Sn{sub 1-x}Mn{sub x}O{sub 2} (x {<=} 0.11) thin films spin-coated on Si (1 1 1) substrate were fabricated by sol-gel method. X-ray diffraction revealed that single-phase rutile polycrystalline structure was obtained for x up to about 0.078. Evolution of the lattice parameters and X-ray photoelectron spectroscopy studies confirmed the incorporation of Mn{sup 3+} cations into rutile SnO{sub 2} lattice. Magnetic measurements revealed that all Sn{sub 1-x}Mn{sub x}O{sub 2} thin films exhibit ferromagnetism at room temperature, which is identified as an intrinsic characteristic. Magnetization data showed that the average magnetic moment per Mn atom decreased and the coercivity increases with increasing Mn content. The origin of room temperature ferromagnetism can be understood in terms of the percolation of the bound magnetic polaron. Our experimental results prove that the sol-gel method is an effective method for fabrication of transition metal doped SnO{sub 2} nanostructures with room temperature ferromagnetism by chemical synthesis.

  10. Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films

    KAUST Repository

    Benali Kanoun, Mohammed

    2012-05-29

    We present first-principles results for Sc-doped ZnOthin films. Neighboring Sc atoms in the surface and/or subsurface layers are found to be coupled ferromagnetically, where only two of the possible configurations induce spin polarization. In the first configuration, the polarization is carried by the Sc d states as expected for transition metaldoping. However, there is a second configuration which is energetically favorable. It is governed by polarized hybrid states of the Zns, O p, and Sc d orbitals. Such highly delocalized states can be an important ingredient for understanding the magnetism of dopedZnOthin films.

  11. Real-time observation of Snell’s law for spin waves in thin ferromagnetic films

    Science.gov (United States)

    Tanabe, Kenji; Matsumoto, Ryo; Ohe, Jun-ichiro; Murakami, Shuichi; Moriyama, Takahiro; Chiba, Daichi; Kobayashi, Kensuke; Ono, Teruo

    2014-05-01

    We report the real-time observation of spin-wave propagation across a step inserted between two ferromagnetic films with different thicknesses. Because the dispersion relation of the spin wave depends on the thickness of the film, the step works as a junction to affect the spin wave propagation. When the spin wave transmits through the junction, the wavenumber undergoes modulation as per Snell’s law, which states that the refraction index is proportional to the wavenumber. From the viewpoint of magnonics, the present achievement opens up new possibilities of controlling the wavenumber of spin waves.

  12. Effect of temperature on the ferromagnetic resonance of Ni{sub 50}Fe{sub 50} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Diaz de Sihues, M. [Departamento de Fisica, Facultad de Ciencias, Universidad del Zulia, Apartado. Postal 526, Maracaibo 4001, Zulia (Venezuela); Silva, P.J. [Laboratorio de Fisica de la Materia Condensada, Centro de Fisica, Instituto Venezolano de Investigaciones Cientificas (IVIC), Carretera Panamericana Km. 11, Apartado 21827, Caracas 1020-A (Venezuela); Fermin, J.R. [Departamento de Fisica, Facultad de Ciencias, Universidad del Zulia, Apartado. Postal 526, Maracaibo 4001, Zulia (Venezuela)]. E-mail: fermin@luz.ve

    2004-12-31

    We report on the effect of temperature on the ferromagnetic resonance (FMR) spectra of Ni{sub 50}Fe{sub 50} thin films sputtered on Si (001) wafers. The FMR field and linewidth were studied as a function of the ferromagnetic layer thickness t, and temperature T. The data are interpreted in the framework of a phenomenological model that includes in- and out-of-plane uniaxial anisotropy fields. The main effect of temperature on the magnetic properties of these films is to increase the in-plane uniaxial anisotropy and to induce a surface anisotropy that pushes the magnetization out-of-plane. The temperature dependence of the resonance field is explained assuming the magnetic anisotropies varying as m{sup 3}, where m=M(T)/M(0) is a reduce magnetization and M(T) follows the law (1-CTe{sup -E/KT}), where E{proportional_to} T{sub C} is the energy gap of the spin wave spectrum, and T{sub C} being the Curie temperature. The resonance field as a function of temperature shows a transition temperature separating two different ferromagnetic regimes. At lower temperatures a new magnetic transition is observed in thinner films. The temperature dependence of the FMR linewidth departs from that expected in other transition metal structures at very low temperatures. This behavior is unique and may be associated with interface and surface effects.

  13. Thickness dependent phase transformation of magnetron-sputtered Ni-Mn-Sn ferromagnetic shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vishnoi, Ritu; Singhal, Rahul; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Functional Nanomaterials Research Laboratory, Department of Physics and Center of Nanotechnology (India)

    2011-09-15

    In this study, the influence of film thickness on the first-order martensite-austenite phase transformation of Ni-Mn-Sn ferromagnetic shape memory alloy thin films has been systematically investigated. Different thicknesses of the Ni-Mn-Sn films (from {approx}100 to 2,500 nm) were deposited by DC magnetron sputtering on Si (100) substrates at 550 Degree-Sign C. X-ray analysis reveals that all the films exhibit austenitic phase with the L2{sub 1} cubic crystal structure at room temperature. The grain size and crystallization extent increase with the increase in film thickness, but the films with thickness above {approx}1,400 nm show structural deterioration due to the formation of MnSn{sub 2} and Ni{sub 3}Sn{sub 4} precipitates. The improvement in the crystallinity of the film with thickness is attributed to the decrease in film-substrate interfacial strain resulting in preferred oriented growth of the films. Temperature-dependent magnetization measurements as well as electrical measurements demonstrate the complete absence of phase transformation for the film of thickness of {approx}120 nm. For thickness greater than 400 nm, film exhibits the structural transformation, and it occurs at higher temperature with better hysteresis as film thickness is increased up to {approx}1,400 nm, after which degradation of phase transformation phenomenon is observed. This degradation is attributed to the disorders present in the films at higher thicknesses. Film with thickness {approx}1,400 nm possesses the highest magnetization with the smallest thermal hysteresis among all the films and therefore best suited for the actuators based on first-order structural phase transformation. Nanoindentation measurements reveal that the higher values of hardness and elastic modulus of about 5.5 and 215.0 GPa obtained in film of 1,014 nm thickness can considerably improve the ductility of ferromagnetic shape memory alloys (FSMA) and their applicability for MEMS applications. The exchange bias

  14. Structural; morphological; optical and magnetic properties of Mn doped ferromagnetic ZnO thin film

    Science.gov (United States)

    Karmakar, R.; Neogi, S. K.; Banerjee, Aritra; Bandyopadhyay, S.

    2012-12-01

    The structural, optical and magnetic properties of the Zn1-xMnxO (0 disorder developed in the samples due to Mn doping. The films are of single phase in nature; no formation of any secondary phase has been detected from structural analysis. Absence of magnetic impurity phase in these films has been confirmed from morphological study also. Increasing tendency of lattice parameters and unit cell volume has been observed with increasing Mn doping concentration. The incorporation of Mn2+ ions introduces disorder in the system. That also leads to slight degradation in crystalline quality of the films with increasing doping. The grain size reduces with increase in Mn doping proportion. The band gaps shows red shift with doping and the width of localized states shows an increasing tendency with doping concentration. It is due to the formation of impurity band and trapping of Mn atoms, which leads to the generation of the defect states within the forbidden band. Photoluminescence (PL) spectra show gradual decrease of intensity of exitonic and defect related peaks with increasing Mn doping. Defect mediated intrinsic ferromagnetism has been observed even at room temperature for 5 at% Mn doped ZnO film. The strong presence of antiferromagnetic (AFM) interaction reduces the observed ferromagnetic moments.

  15. Temperature-dependent stoichiometric alteration in ZnO:Mn nanostructured thin films for enhanced ferromagnetic response

    Science.gov (United States)

    Ilyas, Usman; Lee, P.; Tan, T. L.; Chen, R.; Anwar, Abdul Waheed; Zhang, Sam; Sun, H. D.; Rawat, R. S.

    2016-11-01

    The study investigates the effect of in-situ substrate temperature and argon-oxygen ambient gas pressure of pulsed laser deposition facility on material composition, optical quality and magnetic response of ZnO:Mn thin films. Structural and optical analyses revealed the existence of an optimal in-situ substrate temperature (450 °C) at which thin films showed relatively better texture and optical quality with minimum concentration of structural defects. The detailed analysis of Zn 2p3/2 and O 1s core level XPS spectra revealed that the structural disorder was considerably reduced in thin films after being annealed (in-situ) at substrate temperature of 450 °C. Magnetic measurements revealed the stronger p-d hybridization between oxygen 2p and Mn 3d orbitals in ZnO:Mn thin films being annealed in-situ at 450 °C under Ar:O2 admixture of 2.5 mbar subsequently leading to improved ferromagnetic response.

  16. Native defect induced charge and ferromagnetic spin ordering and coexisting electronic phases in CoO epitaxial thin film

    Energy Technology Data Exchange (ETDEWEB)

    Negi, D. S., E-mail: devendranegi@jncasr.ac.in, E-mail: ranjan@jncasr.ac.in; Loukya, B.; Datta, R., E-mail: devendranegi@jncasr.ac.in, E-mail: ranjan@jncasr.ac.in [International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

    2015-12-07

    We report on the observation of Co vacancy (V{sub Co}) induced charge ordering and ferromagnetism in CoO epitaxial thin film. The ordering is associated with the coexistence of commensurate, incommensurate, and discommensurate electronic phases. Density functional theory calculation indicates the origin of ordering in Co atoms undergoing high spin to low spin transition immediately surrounding the V{sub Co(16.6 at. %)}. Electron magnetic chiral dichroism experiment confirms the ferromagnetic signal at uncompensated Co spins. Such a native defects induced coexistence of different electronic phases at room temperature in a simple compound CoO is unique and adds to the richness of the field with the possibility of practical device application.

  17. Ferromagnetic resonance of Co sub 1 sub 0 sub 0 sub - sub x Hf sub x thin films

    CERN Document Server

    Baek, J S; Lee, S H; Lim, W Y

    1999-01-01

    In order to examine the temperature dependence of the magnetic properties in Co sub 1 sub 0 sub 0 sub - sub x Hf sub x (x=16, 24, 32 at.%) thin films, such as the effective magnetization M sub e sub f sub f , the spectroscopic splitting factor g, the exchange stiffness constant A, and the surface magnetic anisotropy constant K sub s , we carried out ferromagnetic resonance (FMR) experiments in the temperature range of 113 approx 293 K. Spin wave modes, as well as the surface modes, appeared in the Co sub 8 sub 4 Hf sub 1 sub 6 and the Co sub 7 sub 6 Hf sub 2 sub 4 thin films. In the Co sub 6 sub 8 Hf sub 3 sub 2 thin films, however, the spin wave modes appeared only below 233 K. The M sub e sub f sub f and the A increased slightly with decreasing temperature down to 113 K for all samples, but the g were almost constant, regardless of the temperature. The surface magnetic anisotropy constant K sub s sub 1 of the film-air interface and the surface magnetic anisotropy constant K sub s sub 2 of the film-substrate...

  18. Interface Coupling Transition in a Thin EpitaxialAntiferromagnetic Film Interacting with a Ferromagnetic Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Finazzi, M.; Brambilla, A.; Biagioni, P.; Graf, J.; Gweon, G.-H.; Scholl, A.; Lanzara, A.; Duo, L.

    2006-09-07

    We report experimental evidence for a transition in theinterface coupling between an antiferromagnetic film and a ferromagneticsubstrate. The transition is observed in a thin epitaxial NiO film grownon top of Fe(001) as the film thickness is increased. Photoemissionelectron microscopy excited with linearly polarized x rays shows that theNiO film is antiferromagnetic at room temperature with in-plane uniaxialmagnetic anisotropy. The anisotropy axis is perpendicular to the Fesubstrate magnetization when the NiO thickness is less than about 15A,but rapidly becomes parallel to the Fe magnetization for a NiO coveragehigher than 25 A.

  19. Investigation of ferromagnetic heterogeneities in La0.7Sr0.3MnO3 thin films

    Science.gov (United States)

    Mercone, S.; Belmeguenai, M.; Malo, S.; Ott, F.; Cayrel, F.; Golosovsky, M.; Leridon, B.; Adamo, C.; Monod, P.

    2017-02-01

    La0.7Sr0.3MnO3 manganite thin films are interesting since they have a fully spin-polarized conduction band at room temperature and this opens the way for applications in electronics. An important issue is their magnetic heterogeneity, which is very difficult to detect. We address here the heterogeneity detection issue in two epitaxial LSMO thin films (57 nm and 90 nm thick) on Si substrate fabricated by reactive molecular beam epitaxy (MBE) deposition. Combining three complementary analytic techniques, we measured structural and magnetic behavior of these films. The high frequency ferromagnetic resonance behavior observed in these two LSMO samples put in evidence a standard dynamic behaviour in the case of the homogeneous material and an uncommon multi-mode behavior in the heterogeneous bi-layered film. The multi-mode behavior can be attributed to the presence of two magnetic sub-layers inside the LSMO film. Indeed, transmission electron microscopy observations and neutron reflectivity measurements are essential to give a microscopic description of the structure and intrinsic magnetic homo/heterogeneity of the composite film.

  20. Room temperature ferromagnetism in (In{sub 1-x}Ni{sub x}){sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sai Krishna, N. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632014, Tamilnadu (India); Kaleemulla, S., E-mail: skaleemulla@gmail.com [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632014, Tamilnadu (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamilnadu (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu 603104,Tamilnadu (India); Madhusudhana Rao, N.; Krishnamoorthi, C.; Rigana Begam, M. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632014, Tamilnadu (India); Omkaram, I. [Department of Electronics and Radio Engineering, Kyung Hee University, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Sreekantha Reddy, D. [Department of Physics and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-06-15

    Polycrystalline (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} thin films (x=0.00, 0.03, 0.05 and 0.07) were deposited on glass substrates by electron beam evaporation technique. The effect of Ni concentration on composition, structural and magnetic properties of (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} thin films was studied. Increment in the Ni concentration does increase the oxygen vacancies and ferromagnetic strength in (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} thin films. X-ray photoelectron spectroscopy (XPS) studies indicate the dopant Ni exists in Ni (II) state in In{sub 2}O{sub 3} host. Ferromagnetism was attributed to intrinsic nature of the sample rather than any secondary magnetic phases exist in the films. The observed ferromagnetism in (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} was attributed to ferromagnetic exchange interaction between Ni{sup 2+} ions via single free electron trapped in oxygen vacancy. Increase in oxygen vacancies with Ni concentration lead to increase in such an oxygen vacancy mediated ferromagnetic pairs resulting in increase in ferromagnetic strength with Ni concentration.

  1. Uniform annealing effect of electron irradiation on ferromagnetic GaMnAs thin films

    Science.gov (United States)

    Luo, Jia; Xiang, Gang; Gu, Gangxu; Zhang, Xi; Wang, Hailong; Zhao, Jianhua

    2017-01-01

    For more than a decade, researchers have been searching for means to improve the Curie temperature of ferromagnetic GaMnAs samples, among which post-growth annealing in furnace has been treated as the most important one. In this work, we demonstrate that the Curie temperature can be improved by electron irradiation for the first time. Different doses of electron irradiation (1 × 1014, 1 × 1015 and 1 × 1016 electrons/cm2) at 1.7 MeV were applied, the enhancement of magnetic and electrical properties of ferromagnetic GaMnAs films was experimentally confirmed by HR-XRD, SQUID and Magneto-transport measurements. Further SIMS characterizations and analyses reveal that electron irradiation causes bi-directional out-diffusion and redistribution of compensating Mn interstitials towards both the upper surface and the lower interface, a newly found uniform effect clearly different from that of conventional post-growth annealing. The technique of electron irradiation annealing may provide an alternative way to improve the properties of electronic and magnetic compounds such as GaMnAs films.

  2. Temperature and Angular Dependence of Ferromagnetic Resonance (FMR Signal of La0.7Sr0.3MnO3 (LSMO Thin Film Using FMR Technique

    Directory of Open Access Journals (Sweden)

    G. Inkoom

    2014-04-01

    Full Text Available This research study was aimed at determining the temperature dependence of Ferromagnetic Resonance (FMR, the recorded signal versus angle and the magnetic property of the 15 uc thick La0.7Sr0.3MnO3 (LSMO thin film sample on a single crystalline SrTiO3 (STO substrate at 150 K and 9.75 GHz using ferromagnetic resonance technique. We observed from the Ferromagnetic Resonance (FMR spectra at various temperatures (150, 200 and 250 K, respectively that as the temperature increases, the FMR spectra shifts to higher fields and this might be as a result of transition into the ferromagnetic state. The recorded signal versus the angle showed an unusual phenomenon at all temperatures (150, 200 and 250 K, respectively and this might be due to shape effects and other contributing factors such as misfit strain and crystal misfit in the LSMO thin film. The plot of resonance field versus the in-plane angle showed a spectrum which was sinusoidal-like in nature with maximum and minimum curvatures. The resonance position and the Full Width Half Maximum (FWHM of the 15 uc thick LSMO thin film were 718.15 and 561.45 Oe, respectively. The 15 uc thick LSMO thin film displayed ferromagnetic resonance at 150, 200 and 250 K, respectively and this has been confirmed using the surface plot.

  3. Solid state synthesis and characterization of ferromagnetic nanocomposite Fe–In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Myagkov, V.G. [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation); Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014 (Russian Federation); Tambasov, I.A., E-mail: tambasov_igor@mail.ru [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation); Bayukov, O.A. [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation); Zhigalov, V.S. [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation); Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014 (Russian Federation); Bykova, L.E. [Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036 (Russian Federation); Mikhlin, Yu.L. [Institute of Chemistry and Chemical Technology, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660049 (Russian Federation); Volochaev, M.N. [Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014 (Russian Federation); Bondarenko, G.N. [Institute of Chemistry and Chemical Technology, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660049 (Russian Federation)

    2014-11-05

    Highlights: • Ferromagnetic Fe–In{sub 2}O{sub 3} nanocomposites were prepared by solid-state reactions. • The reaction starts above the initiation temperature T{sub in} ∼ 180 °S. • The reaction products contain α-Fe nanocrystals enveloped by an In{sub 2}O{sub 3} shell. • The formation mechanisms of the Fe–In{sub 2}O{sub 3} core/shell-like structures were discussed. - Abstract: We have successfully synthesized ferromagnetic Fe–In{sub 2}O{sub 3} nanocomposite thin films for the first time using the thermite reaction Fe{sub 2}O{sub 3} + In = In{sub 2}O{sub 3} + Fe. The initial In/Fe{sub 2}O{sub 3} bilayers were obtained by the deposition of In layers on α-Fe{sub 2}O{sub 3} films. The reaction occurs in a self-propagating mode in a homogeneous thermal film plane field at heating rates above 20 K/s and at temperatures above initiation temperature T{sub in} ∼ 180 °S. At heating rates lower than 20 K/s the mixing of the In and Fe{sub 2}O{sub 3} layers occurs across the whole In/Fe{sub 2}O{sub 3} interface and the synthesis of the ferromagnetic α-Fe phase starts above the initiation temperature T{sub in} = 180 °S. X-ray diffraction, X-ray photoelectron spectroscopy, Mossbauer spectroscopy, transmission electron microscopy and magnetic measurements were used for phase identification and microstructure observation of the synthesized Fe–In{sub 2}O{sub 3} samples. The reaction products contain (1 1 0) textured α-Fe nanocrystals with a diameter around 100 nm and surrounded by an In{sub 2}O{sub 3} matrix. These results enable new efficient low-temperature methods for synthesizing ferromagnetic nanocomposite films containing ferromagnetic nanoclusters embedded in transparent conducting oxides.

  4. Magnetization reversal in ferromagnetic thin films induced by spin-orbit interaction with Slonczewski-like spin transfer torque

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jia, E-mail: lijia@wipm.ac.cn [State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan 430071 (China)

    2014-10-07

    We theoretically investigate the dynamics of magnetization in ferromagnetic thin films induced by spin-orbit interaction with Slonczewski-like spin transfer torque. We reproduce the experimental results of perpendicular magnetic anisotropy films by micromagnetic simulation. Due to the spin-orbit interaction, the magnetization can be switched by changing the direction of the current with the assistant of magnetic field. By increasing the current amplitude, wider range of switching events can be achieved. Time evolution of magnetization has provided us a clear view of the process, and explained the role of minimum external field. Slonczewski-like spin transfer torque modifies the magnetization when current is present. The magnitude of the minimum external field is determined by the strength of the Slonczewski-like spin transfer torque. The investigations may provide potential applications in magnetic memories.

  5. Shock wave induced martensitic transformations and morphology changes in Fe-Pd ferromagnetic shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bischoff, A. J., E-mail: alina.bischoff@iom-leipzig.de; Arabi-Hashemi, A.; Ehrhardt, M.; Lorenz, P.; Zimmer, K. [Leibniz Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig (Germany); Mayr, S. G., E-mail: stefan.mayr@iom-leipzig.de [Leibniz Institute for Surface Modification, Permoserstr. 15, 04318 Leipzig (Germany); Department of Physics and Earth Sciences, Leipzig University, Linnéstr. 5, 04103 Leipzig (Germany)

    2016-04-11

    Combining experimental methods and classical molecular dynamics (MD) computer simulations, we explore the martensitic transformation in Fe{sub 70}Pd{sub 30} ferromagnetic shape memory alloy thin films induced by laser shock peening. X-ray diffraction and scanning electron microscope measurements at shock wave pressures of up to 2.5 GPa reveal formation of martensitic variants with preferred orientation of the shorter c-axis of the tetragonal unit cell perpendicular to the surface plane. Moreover, consequential merging of growth islands on the film surface is observed. MD simulations unveil the underlying physics that are characterized by an austenite-martensite transformation with a preferential alignment of the c-axis along the propagation direction of the shock wave, resulting in flattening and in-plane expansion of surface features.

  6. Origin of fieldlike spin-orbit torques in heavy metal/ferromagnet/oxide thin film heterostructures

    Science.gov (United States)

    Ou, Yongxi; Pai, Chi-Feng; Shi, Shengjie; Ralph, D. C.; Buhrman, R. A.

    2016-10-01

    We report measurements of the thickness and temperature (T ) dependencies of current-induced spin-orbit torques, especially the fieldlike (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/oxide (MgO and Hf Ox/MgO ) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.

  7. Preparation and characterization of thin ferromagnetic CrO{sub 2} films for applications in magnetoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Rabe, M. E-mail: rabe@physik.rwth-aachen.de; Dressen, J.; Dahmen, D.; Pommer, J.; Stahl, H.; Ruediger, U.; Guentherodt, G.; Senz, S.; Hesse, D

    2000-03-01

    The theoretically predicted high spin polarization of half-metallic ferromagnets like CrO{sub 2} and NiMnSb make them to promising materials for magnetoelectronic applications. Highly textured CrO{sub 2} films have been prepared by chemical vapor deposition and molecular beam epitaxy. The temperature-dependent magnetotransport data has been correlated with electronic properties of CrO{sub 2}. Over a wide temperature range (150-330 K) the resistivity follows a T{sup 2} behaviour, consistent with electron-electron scattering. Near the Curie temperature of CrO{sub 2} no metal-insulator transition, a magnetoresistance of -7% (B=9 T) and an enhancement of the resistance due to electron-magnon scattering are observed.

  8. How antiferromagnetism drives the magnetization of a ferromagnetic thin film to align out of plane.

    Science.gov (United States)

    Wang, Bo-Yao; Hong, Jhen-Yong; Yang, Kui-Hon Ou; Chan, Yuet-Loy; Wei, Der-Hsin; Lin, Hong-Ji; Lin, Minn-Tsong

    2013-03-15

    Interfacial moments of an antiferromagnet are known for their prominent effects of induced coercivity enhancement and exchange bias in ferromagnetic-antiferromagnetic exchange-coupled systems. Here we report that the unpinned moments of an antiferromagnetic face-centered-cubic Mn layer can drive the magnetization of an adjacent Fe film perpendicular owing to a formation of intrinsic perpendicular anisotropy. X-ray magnetic circular dichroism and hysteresis loops show establishment of perpendicular magnetization on Fe/Mn bilayers while temperature was decreased. The fact that the magnitude of perpendicular anisotropy of the Fe layer is enhanced proportionally to the out-of-plane oriented orbital moment of the Mn unpinned layer, rather than that of Fe itself, gives evidence for the Mn unpinned moments to be the origin of the established perpendicular magnetization.

  9. A new strip line broad-band measurement evaluation for determining the complex permeability of thin ferromagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Bekker, V.; Seemann, K. E-mail: klaus.seemann@imf.fzk.de; Leiste, H

    2004-04-01

    In the present paper, a new method for determining the frequency dependent complex permeability of thin magnetic films, designed for measurements up to 5 GHz, is presented. The measurement technique described here was carried out by a one-port permeameter, which is based on a short-circuited strip line. The complex permeability was deduced by a new analytical approach from the measured reflection coefficient of a strip line (S{sub 11}) with and without a ferromagnetic film material inside. An adaptive error correction was applied in the measurement procedure. The spectral permeability of thin FeCoAlN films with an in-plane uniaxial anisotropy of {mu}{sub 0}{sup *}H{sub a}=3.2 mT induced by annealing at CMOS temperatures in a static magnetic field was investigated. The measurements were compared with a theoretical model taking the Landau-Lifshitz and eddy current theories into account. A resonant frequency of about 1.6 GHz was observed.

  10. Frequency mixer having ferromagnetic film

    Energy Technology Data Exchange (ETDEWEB)

    Khitun, Alexander; Roshchin, Igor V.; Galatsis, Kosmas; Bao, Mingqiang; Wang, Kang L.

    2016-03-29

    A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.

  11. Strain induced ferromagnetism in epitaxial Cr{sub 2}O{sub 3} thin films integrated on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Punugupati, Sandhyarani, E-mail: spunugu@ncsu.edu; Narayan, Jagdish; Hunte, Frank [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-09-29

    We report on the epitaxial growth and magnetic properties of antiferromagnetic and magnetoelectric (ME) Cr{sub 2}O{sub 3} thin films deposited on cubic yttria stabilized zirconia (c-YSZ)/Si(001) using pulsed laser deposition. The X-ray diffraction (2ϴ and Φ) and TEM characterizations confirm that the films were grown epitaxially. The Cr{sub 2}O{sub 3}(0001) growth on YSZ(001) occurs with twin domains. There are four domains of Cr{sub 2}O{sub 3} with in-plane rotation of 30° or 150° from each other about the [0001] growth direction. The epitaxial relation between the layers is given as [001]Si ‖ [001]YSZ ‖ [0001]Cr{sub 2}O{sub 3} and [100]Si ǁ [100]YSZ ǁ [101{sup ¯}0] Cr{sub 2}O{sub 3} or [112{sup ¯}0] Cr{sub 2}O{sub 3}. Though the bulk Cr{sub 2}O{sub 3} is an antiferromagnetic with T{sub N} = 307 K, we found that the films exhibit ferromagnetic like hysteresis loops with high saturation and finite coercive field up to 400 K. The thickness dependent magnetizations together with oxygen annealing results suggest that the ferromagnetism (FM) is due to oxygen related defects whose concentration is controlled by strain present in the films. This FM, in addition to the intrinsic magneto-electric properties of Cr{sub 2}O{sub 3}, opens the door to relevant spintronics applications.

  12. Granular and layered ferroelectric-ferromagnetic thin-film nanocomposites as promising materials with high magnetotransmission effect

    Science.gov (United States)

    Akbashev, A. R.; Telegin, A. V.; Kaul, A. R.; Sukhorukov, Yu. P.

    2015-06-01

    Epitaxial thin films of granular and layered nanocomposites consisting of ferromagnetic perovskite Pr1-xSrxMnO3 and ferroelectric hexagonal LuMnO3 were grown on ZrO2(Y2O3) substrates using metal-organic chemical vapor deposition (MOCVD). A self-organized growth of the granular composite took place in situ as a result of phase separation of the Pr-Sr-Lu-Mn-O system into the perovskite and hexagonal phases. Optical transmission measurements revealed a large negative magnetotransmission effect in the layered nanocomposite over a wide spectral and temperature range. The granular nanocomposite unexpectedly showed an even larger, but positive, magnetotransmission effect at room temperature.

  13. Spin-scattering rates in metallic thin films measured by ferromagnetic resonance damping enhanced by spin-pumping

    Energy Technology Data Exchange (ETDEWEB)

    Boone, C. T.; Shaw, J. M.; Nembach, H. T.; Silva, T. J. [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

    2015-06-14

    We determined the spin-transport properties of Pd and Pt thin films by measuring the increase in ferromagnetic resonance damping due to spin-pumping in ferromagnetic (FM)-nonferromagnetic metal (NM) multilayers with varying NM thicknesses. The increase in damping with NM thickness depends strongly on both the spin- and charge-transport properties of the NM, as modeled by diffusion equations that include both momentum- and spin-scattering parameters. We use the analytical solution to the spin-diffusion equations to obtain spin-diffusion lengths for Pt and Pd. By measuring the dependence of conductivity on NM thickness, we correlate the charge- and spin-transport parameters, and validate the applicability of various models for momentum-scattering and spin-scattering rates in these systems: constant, inverse-proportional (Dyakanov-Perel), and linear-proportional (Elliot-Yafet). We confirm previous reports that the spin-scattering time appears to be shorter than the momentum scattering time in Pt, and the Dyakanov-Perel-like model is the best fit to the data.

  14. Ferromagnetic boundary magnetization properties of epitaxial Cr(2 - x)Al(x)O3 thin films

    Science.gov (United States)

    Fallarino, Lorenzo; Binek, Christian; Berger, Andreas

    2015-03-01

    The existence of an equilibrium net magnetization at (0001) surfaces is enabled by symmetry constrains for the magnetoelectric antiferromagnet α-Cr2O3. The occurrence of this boundary magnetization (BM) is furthermore roughness insensitive. The BM is hereby fully coupled to the bulk antiferromagnetic order parameter and can be reversed together with it by a combination of E and H fields in bulk materials, or solely by magnetic means for single crystal (0001) oriented thin chromia films. In order to understand whether the BM can be extended to alloys containing different oxide materials, we investigated the effect of Al2O3 doping onto the structural and magnetic properties of α-Cr2O3. We grew, using a hybrid growth procedure, 100 nm thick high-quality epitaxial Cr2-xAlxO3(0001) thin films in the concentration range between x =0 to x =0.6, preserving the original corundum crystal structure and symmetry. Using SQUID magnetometry, we showed that the critical temperature TN can be tuned by alloying with α-Al2O3 using the BM as a probe to study the magnetic transition. Furthermore, we were able to evaluate the critical exponent and the absolute BM values for different samples. Both properties are consistent with the expected values, corroborating the BM nature of the observed magnetic signals.

  15. Ferroelectric, ferromagnetic and optical properties of KBiFe2O5 thin film: a structure property relationship

    Science.gov (United States)

    Jalaja, M. A.; Predeep, P.; Dutta, Soma

    2017-01-01

    KBiFe2O5 thin film was prepared by spin-coating on platinized (111) Si wafer and characterized for its structure, microstructure, ferroelectric, magnetic and optical properties. X-ray diffraction (XRD) revealed a noncentrosymmetric, orthorhombic crystal structure of KBiFe2O5. The well-distributed dense microstructure with large grain and narrow grain boundaries in KBiFe2O5 enhanced its ferroelectric properties. The strong, frequency-dependent behavior of the ferroelectric hysteresis loop suggested the leaky nature of the material. Piezoelectricity was confirmed by determining the piezoelectric charge coefficients (d 33 = 2.82 nm V-1 at positive bias and 3.195 nm V-1 at negative bias voltage) from the field versus the displacement plot. The weak ferromagnetism of the film is attributed to the high spin state of Fe3+ in the FeO4 tetrahedron of KBiFe2O5. Optical properties (refractive indices and extinction coefficients) are studied from the reflectance spectrum. The refractive indices are higher in the visible region and showed a normal dispersion in the blue region. The bandgap of the film was calculated to be 1.61 eV.

  16. Coupling of microwave magnetic dynamics in thin ferromagnetic films to stripline transducers in the geometry of the broadband stripline ferromagnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Kostylev, M., E-mail: mikhail.kostylev@uwa.edu.au [School of Physics, The University of Western Australia, Crawley 6009 (Australia)

    2016-01-07

    We constructed a quasi-analytical self-consistent model of the stripline-based broadband ferromagnetic resonance (FMR) measurements of ferromagnetic films. Exchange-free description of magnetization dynamics in the films allowed us to obtain simple analytical expressions. They enable quick and efficient numerical simulations of the dynamics. With this model, we studied the contribution of radiation losses to the ferromagnetic resonance linewidth, as measured with the stripline FMR. We found that for films with large conductivity of metals the radiation losses are significantly smaller than for magneto-insulating films. Excitation of microwave eddy currents in these materials contributes to the total microwave impedance of the system. This leads to impedance mismatch with the film environment resulting in decoupling of the film from the environment and, ultimately, to smaller radiation losses. We also show that the radiation losses drop with an increase in the stripline width and when the sample is lifted up from the stripline surface. Hence, in order to eliminate this measurement artefact, one needs to use wide striplines and introduce a spacer between the film and the sample surface. The radiation losses contribution is larger for thicker films.

  17. Electric field induced changes in the coercivity of a thin-film ferromagnet

    Energy Technology Data Exchange (ETDEWEB)

    Fowley, C; Rode, K; Oguz, K; Kurt, H; Coey, J M D [CRANN and School of Physics, Trinity College Dublin (Ireland)

    2011-08-03

    Data are presented which indicate a modification of magnetic anisotropy in the MgO/CoFeB/Pd and MgO/CoFeB/Pt systems, using electric fields of order 500 MV m{sup -1} (0.5 V nm{sup -1}) applied across a thermally grown SiO{sub 2} as a gate dielectric. The effect is most prominent at low temperature (12 K) and is manifested as a small change in coercivity. The sign of the effect depends on the choice of both capping layer and annealing temperature. The results suggest that both interfaces play a role in the appearance of perpendicular magnetic anisotropy in these thin-film stacks, and not just the interface with MgO.

  18. Full spin switch effect for the superconducting current in a superconductor/ferromagnet thin film heterostructure

    Science.gov (United States)

    Leksin, P. V.; Garif'yanov, N. N.; Garifullin, I. A.; Schumann, J.; Vinzelberg, H.; Kataev, V.; Klingeler, R.; Schmidt, O. G.; Büchner, B.

    2010-09-01

    Using the spin switch design F1/F2/S theoretically proposed by Oh et al., [Appl. Phys. Lett. 71, 2376 (1997)], that comprises a ferromagnetic bilayer as a ferromagnetic component, and an ordinary superconductor as the second interface component, we have realized a full spin switch effect for the superconducting current. An experimental realization of this spin switch construction was achieved for the CoOx/Fe1/Cu/Fe2/In multilayer.

  19. Angular dependence of ferromagnetic resonance in Tb-doped Ni{sub 80}Fe{sub 20} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Chen [Physics Department, Southeast University, Nanjing 211189 (China); Zhang, Dong [Physics Department, Southeast University, Nanjing 211189 (China); School of Physics Science and Information Engineering, Liaocheng University, Liaocheng 252059 (China); Wang, Yukun [Physics Department, Southeast University, Nanjing 211189 (China); Huang, Haibo [College of Material Science and Engineering, Southeast University, Nanjing 211189 (China); Zhai, Ya, E-mail: yazhai@seu.edu.cn [Physics Department, Southeast University, Nanjing 211189 (China); Zhai, Hongru [National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093 (China)

    2014-06-15

    Highlights: • The soft magnetic properties of Ni{sub 80}Fe{sub 20} films with Tb dopants up to 8.4% are kept. • The different mechanisms of FMR linewidth are separated and studied. • Magnetic anisotropy constants, Lande g factor, etc. are discussed quantitatively. • The Gilbert damping is increased by more than 50 times with 8.4% of Tb dopants. - Abstract: The mechanisms of angular dependence of ferromagnetic resonance (FMR) linewidth of dilute Tb doping in Ni{sub 80}Fe{sub 20} thin films are investigated by experimental approach and the theoretical fitting by considering the contributions from intrinsic spin–orbit coupling, two-magnon scattering and inhomogeneous broadening. It is shown that the damping coefficient α, by intrinsic contribution extracted from FMR linewidth, is increased by more than 50 times as the Tb concentration increases to 8.4%, indicating that the spin–orbit coupling of this system increases with the introduction of Tb impurities. The magnetic anisotropy constants K{sub 1} and K{sub 2} are obtained and show an increasing trend from negative to positive, which implies that the Tb dopants could enhance the perpendicular anisotropy.

  20. In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, T. [Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Aikoh, K. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Sakamaki, M.; Amemiya, K. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Iwase, A. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

    2015-12-15

    Surface ferromagnetic state of FeRh thin films irradiated with 1 keV Ar ion-beam has been investigated by using soft X-ray Magnetic Circular Dichroism (XMCD). It was revealed that the Fe atoms of the samples were strongly spin-polarized after Ar ion-beam irradiation. Due to its small penetration depth, 1 keV Ar ion-beam irradiation can modify the magnetic state at subsurface of the samples. In accordance with the XMCD sum rule analysis, the main component of the irradiation induced ferromagnetism at the FeRh film surface was to be effective spin magnetic moment, and not to be orbital moment. We also confirmed that the surface ferromagnetic state could be produced by thermal annealing of the excessively ion irradiated paramagnetic subsurface of the FeRh thin films. This novel magnetic modification technique by using ion irradiation and subsequent annealing can be a potential tool to control the surface magnetic state of FeRh thin films.

  1. Comparison of ferromagnetism in n- and p-type magnetic semiconductor thin films of ZnCoO

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y.H., E-mail: yuhua@phys.ncku.edu.t [Department of Physics, National Cheng Kung University, No. 1, Ta-Shuei Road, Tainan 70101, Taiwan (China); Lee, J.C.; Min, J.F. [Department of Physics, National Cheng Kung University, No. 1, Ta-Shuei Road, Tainan 70101, Taiwan (China); Su, C.W. [Department of Applied Physics, National Chiayi University, Chiayi 60004, Taiwan (China)

    2011-07-15

    Both n- and p-type diluted magnetic semiconductor ZnCoO are made by magnetron co-sputtering with, respectively, dopants of Al and dual dopants of Al and N. The two sputtering targets are compound ZnCoO with 5% weight of Co and pure metal Al. Sputtering gases for n- and p-type films are pure Ar and N{sub 2}, respectively. These films are magnetic at room temperature and possess free electron- and hole-concentration of 5.34x10{sup 20} and 5.27x10{sup 13} cm{sup -3}. Only the n-type film exhibits anomalous Hall-effect signals. Magnetic properties of these two types of films are compared and discussed based on measurements of microstructure and magneto-transport properties. - Research highlights: n-type ZnCoO:Al and p-type ZnCoO:(Al, N) films are made and are both ferromagnetic at room temperature. Signal of anomalous Hall-effect (AHE) is clearly observed only for n-type film but not for p-type film. Photoluminescence (PL) spectrum shows a peak attributed to shallow acceptor band of N. Ferromagnetic exchange coupling between magnetic ions in n-type film is through spin polarized free electrons. Ferromagnetism in p-type film is not attributed to the free hole-carriers mediation but to the overlap of BMP.

  2. Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

    Institute of Scientific and Technical Information of China (English)

    LIN Ying-Bin; ZHANG Feng-Ming; DU You-Wei; HUANG Zhi-Gao; ZHENG Jian-Guo; LU Zhi-Hai; ZOU Wen-Qin; LU Zhong-Lin; XU Jian-Ping; JI Jian-Ti; LIU Xing-Chong; WANG Jian-Feng; LV Li-Ya

    2007-01-01

    Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si (001) substrates by plasma enhanced chemical vapour deposition (PECVD). X-ray diffraction measurements reveal that the Zn1-xMnxO films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn2+ ions in Mndoped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device (SQUID) measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.

  3. Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Heidarian, A.; Bali, R.; Grenzer, J.; Wilhelm, R.A.; Heller, R.; Yildirim, O.; Lindner, J.; Potzger, K.

    2015-09-01

    Ion irradiation induced modifications of the thermomagnetic properties of equiatomic FeRh thin films have been investigated. The application of 20 keV Ne{sup +} ions at different fluencies leads to broadening of the antiferromagnetic to ferromagnetic phase transition as well as a shift of the transition temperature towards lower temperatures with increasing ion fluence. Moreover, the ferromagnetic background at low temperatures generated by the ion irradiation leads to pronounced saturation magnetisation at 5 K. Complete erasure of the transition, i.e. ferromagnetic ordering through the whole temperature regime was achieved at a Ne{sup +} fluence of 3 × 10{sup 14} ions/cm{sup 2}. It does not coincide with the complete randomization of the chemical ordering of the crystal lattice.

  4. Measurement of high frequency conductivity of oxide-doped anti-ferromagnetic thin film with a near-field scanning microwave microscope

    Directory of Open Access Journals (Sweden)

    Z. Wu

    2014-04-01

    Full Text Available In this manuscript, we describe how the map of high frequency conductivity distribution of an oxide-doped anti-ferromagnetic 200 nm thin film can be obtained from the quality factor (Q measured by a near-field scanning microwave microscope (NSMM. Finite element analysis (FEA is employed to simulate the NSMM tip-sample interaction and obtain a curve related between the simulated quality factor (Q and conductivity. The curve is calibrated by a standard Cu thin film with thickness of 200 nm, together with NSMM measured Q of Ag, Au, Fe, Cr and Ti thin films. The experimental conductivity obtained by the NSMM for IrMn thin films with various doped concentrations of Al2O3 is found consistent with conventional voltammetry measurement in the same tendency. That conductivity decreases as the content of doped Al2O3 increases. The results and images obtained demonstrate that NSMM can be employed in thin film analysis for characterization of local electrical properties of materials in a non-destructive manner and for obtaining a map of conductivity distribution on the same film.

  5. Thickness dependent Curie temperature and power-law behavior of layering transitions in ferromagnetic classical and quantum thin films described by Ising, XY and Heisenberg models

    Energy Technology Data Exchange (ETDEWEB)

    Yüksel, Yusuf, E-mail: yusuf.yuksel@deu.edu.tr; Akıncı, Ümit

    2015-04-01

    Ferromagnetic–paramagnetic phase transitions in classical and quantum thin films have been studied up to 50 mono-layers using effective field theory with two-site cluster approximation. Variation of the Curie temperature as a function of film thickness has been examined. The relative shift of the Curie temperature from the corresponding bulk value has been investigated in terms of the shift exponent λ. We have found that shift exponent λ clearly depends on the strength of the ferromagnetic exchange coupling of the surface. Moreover, we have not observed any significant difference between classical and quantum exponents for a particular model.

  6. Micromagnetic Simulation of Magnetic Domains in Exchange-coupled Ferromagnetic Thin Films

    Institute of Scientific and Technical Information of China (English)

    WANG; Zi-jun

    2013-01-01

    The reversal process of exchange spring double layers was simulated,investigating the impact of anisotropy constant and film thickness of both hard and soft layer on the magnetic domain structures.We also worked over the magnetization configuration in hard/soft/hard and soft/hard/soft trilayer exchange springs.Changing the anisotropy constant and film thickness of hard and soft layer would greatly impact

  7. Breaking of Galilean Invariance in the Hydrodynamic Formulation of Ferromagnetic Thin Films

    Science.gov (United States)

    Iacocca, Ezio; Silva, T. J.; Hoefer, Mark A.

    2017-01-01

    Microwave magnetodynamics in ferromagnets are often studied in the small-amplitude or weakly nonlinear regime corresponding to modulations of a well-defined magnetic state. However, strongly nonlinear regimes, where the aforementioned approximations are not applicable, have become experimentally accessible. By reinterpreting the governing Landau-Lifshitz equation of motion, we derive an exact set of equations of dispersive hydrodynamic form that are amenable to analytical study even when full nonlinearity and exchange dispersion are included. The resulting equations are shown to, in general, break Galilean invariance. A magnetic Mach number is obtained as a function of static and moving reference frames. The simplest class of solutions are termed uniform hydrodynamic states (UHSs), which exhibit fluidlike behavior including laminar flow at subsonic speeds and the formation of a Mach cone and wave fronts at supersonic speeds. A regime of modulational instability is also possible, where the UHS is violently unstable. The hydrodynamic interpretation opens up novel possibilities in magnetic research.

  8. Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni{sup 2+} ion implanted zinc oxide (ZnO) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, B. [Gautam Buddha University, Department of Applied Sciences, Greater Noida (India); Ghosh, S.; Srivastava, P. [Indian Institute of Technology Delhi, Nanostech Laboratory, New Delhi (India); Kumar, P.; Kanjilal, D. [Aruna Asaf Ali Marg, Inter University Accelerator Centre, New Delhi (India)

    2012-05-15

    We report variable temperature resistivity measurements and mechanisms related to electrical conduction in 200 keV Ni{sup 2+} ion implanted ZnO thin films deposited by vapor phase transport. The dc electrical resistivity versus temperature curves show that all polycrystalline ZnO films are semiconducting in nature. In the room temperature range they exhibit band conduction and conduction due to thermionic emission of electrons from grain boundaries present in the polycrystalline films. In the low temperature range, nearest neighbor hopping (NNH) and variable range hopping (VRH) conduction are observed. The detailed conduction mechanism of these films and the effects of grain boundary (GB) barriers on the electrical conduction process are discussed. An attempt is made to correlate electrical conduction behavior and previously observed room temperature ferromagnetism of these films. (orig.)

  9. Effect of Cr addition on the structural, magnetic and mechanical properties of magnetron sputtered Ni-Mn-In ferromagnetic shape memory alloy thin films

    Science.gov (United States)

    Akkera, Harish Sharma; Kaur, Davinder

    2016-12-01

    The effect of Cr substitution for In on the structural, martensitic phase transformation and mechanical properties of Ni-Mn-In ferromagnetic shape memory alloy (FSMA) thin films was systematically investigated. X-ray diffraction results revealed that the Ni-Mn-In-Cr thin films possessed purely austenitic cubic L21 structure at lower content of Cr, whereas higher Cr content, the Ni-Mn-In-Cr thin films exhibited martensitic structure at room temperature. The temperature-dependent magnetization ( M- T) and resistance ( R- T) results confirmed that the monotonous increase in martensitic transformation temperatures ( T M) with the addition of Cr content. Further, the room temperature nanoindentation studies revealed the mechanical properties such as hardness ( H), elastic modulus ( E), plasticity index ( H/ E) and resistance to plastic deformation ( H 3/ E 2) of all the samples. The addition of Cr content significantly enhanced the hardness (28.2 ± 2.4 GPa) and resistance to plastic deformation H 3/ E 2 (0.261) of Ni50.4Mn34.96In13.56Cr1.08 film as compared with pure Ni-Mn-In film. As a result, the appropriate addition of Cr significantly improved the mechanical properties with a decrease in grain size, which could be further attributed to the grain boundary strengthening mechanism. These findings indicate that the Cr-doped Ni-Mn-In FSMA thin films are potential candidates for microelectromechanical systems applications.

  10. Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe{sub 100−x}Co{sub x}(001) thin films (x < 11)

    Energy Technology Data Exchange (ETDEWEB)

    Kusaoka, A.; Kimura, J.; Takahashi, Y., E-mail: takahasy@yz.yamagata-u.ac.jp; Inaba, N. [Graduate School of Science and Engineering, Yamagata University, Yonezawa, Yamagata 992-8510 (Japan); Kirino, F. [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, Tokyo 110-8714 (Japan); Ohtake, M.; Futamoto, M. [Faculty of Science and Engineering, Chuo University, Tokyo 112-8551 (Japan)

    2015-05-07

    Effects of post-growth annealing on the magnetic damping of 3d transition alloy thin films were investigated. Fe{sub 100−x}Co{sub x} (x < 11 at. %) thin films were epitaxially deposited on GaAs(001) substrates by rf magnetron sputtering, and some of them were annealed without exposing to atmosphere. Electrical measurement showed that in-plane resistivity was smaller in the annealed films than in the as-deposited ones, indicating that the annealing mitigates crystalline imperfections and leads to reduced electron scattering rates. Magnetic damping was evaluated by the peak widths of ferromagnetic resonance (FMR) spectra obtained by a conventional Q-band spectrometer. Comparison of as-deposited and annealed specimens showed that the damping was decreased by annealing. Combined with the electrical and FMR measurements, these observations are consistent with the theoretical predictions that crystalline imperfections strongly influence the magnetic damping, both in intrinsic and extrinsic origins.

  11. Shape-induced ultrahigh magnetic anisotropy and ferromagnetic resonance frequency of micropatterned thin Permalloy films

    NARCIS (Netherlands)

    Zhuang, Y.; Vroubel, M.; Rejaei, B.; Burghartz, J.N.; Attenborough, K.

    2006-01-01

    Magnetic anisotropy Hk>200 Oe was observed from bar-shaped Permalloy strips. The film was deposited on sputtered Cr seed layer by electroplating under ∼ 800 Oe external magnetic field. Tiny degradation of Hk was observed after 30 min postannealing at 400 °C in the absence of external magnetic field.

  12. Dispersive shock waves in Bose-Einstein condensates and nonlinear nano-oscillators in ferromagnetic thin films

    Science.gov (United States)

    Hoefer, Mark A.

    This thesis examines nonlinear wave phenomena, in two physical systems: a Bose-Einstein condensate (BEC) and thin film ferromagnets where the magnetization dynamics are excited by the spin momentum transfer (SMT) effect. In the first system, shock waves generated by steep gradients in the BEC wavefunction are shown to be of the disperse type. Asymptotic and averaging methods are used to determine shock speeds and structure in one spatial dimension. These results are compared with multidimensional numerical simulations and experiment showing good, qualitative agreement. In the second system, a model of magnetization dynamics due to SMT is presented. Using this model, nonlinear oscillating modes---nano-oscillators---are found numerically and analytically using perturbative methods. These results compare well with experiment. A Bose-Einstein condensate (BEC) is a quantum fluid that gives rise to interesting shock wave nonlinear dynamics. Experiments depict a BEC that exhibits behavior similar to that of a shock wave in a compressible gas, e.g. traveling fronts with steep gradients. However, the governing Gross-Pitaevskii (GP) equation that describes the mean field of a BEC admits no dissipation hence classical dissipative shock solutions do not explain the phenomena. Instead, wave dynamics with small dispersion is considered and it is shown that this provides a mechanism for the generation of a dispersive shock wave (DSW). Computations with the GP equation are compared to experiment with excellent agreement. A comparison between a canonical 1D dissipative and dispersive shock problem shows significant differences in shock structure and shock front speed. Numerical results associated with laboratory experiments show that three and two-dimensional approximations are in excellent agreement and one dimensional approximations are in qualitative agreement. The interaction of two DSWs is investigated analytically and numerically. Using one dimensional DSW theory it is argued

  13. Study of spin pumping in Co thin film vis-à-vis seed and capping layers using ferromagnetic resonance spectroscopy

    Science.gov (United States)

    Bhusan Singh, Braj; Jena, Sukanta Kumar; Bedanta, Subhankar

    2017-08-01

    We investigated the dependence of the seed (Ta/Pt, Ta/Au) and capping (Pt/Ta, Au/Ta) layers on the spin pumping effect in a 3 nm thick Co thin film using ferromagnetic resonance spectroscopy (FMR). The FMR data were fitted with Kittel’s equation to extract the values of the damping constant and g-factor. A strong dependence of the seed and capping layers on spin pumping has been discussed. The value of the damping constant (α) is found to be relatively large i.e. 0.0326  ±  0.0008 for the Ta(3)/Pt(3)/Co(3)/Pt(3)/Ta(3) (nm) multilayer structure, while it is 0.0104  ±  0.0003 for Ta(3)/Co(3)/Ta(3) (nm). An increase in α is observed, due to the Pt layer that works as a good sink for spins, due to high spin orbit coupling. In addition, we measured the effective spin conductance {{g}\\downarrow \\uparrow }   =  5.82  ±  0.08  ×  1018 m-2 for the structure Ta(3)/Pt(3)/Co(3)/Pt(3)/Ta(3) (nm) as a result of the enhancement in α relative to its bulk value. We observed that the evaluated g-factor decreases as effective demagnetizing magnetic field increases in all of the studied samples. The azimuthal dependence of the magnetic resonance field and line width showed relatively high anisotropy in the tri-layer Ta(3)/Co(3)/Ta(3) (nm) structure.

  14. Growth and magnetotransport study of thin ferromagnetic CrO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Rabe, M.; Pommer, J.; Samm, K.; Ozyilmaz, B.; Koenig, C.; Fraune, M.; Ruediger, U.; Guentherodt, G. [II. Physikalisches Institut, Rheinisch-Westfaelische Technische Hochschule Aachen, Aachen (Germany); Senz, S.; Hesse, D. [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Germany)

    2002-01-14

    Highly a-axis-textured CrO{sub 2} films have been deposited on Al{sub 2}O{sub 3}(0001) and on isostructural TiO{sub 2}(100) substrates by a chemical vapour deposition technique. For Al{sub 2}O{sub 3} substrates a columnar growth of CrO{sub 2}(010) on an initial Cr{sub 2}O{sub 3}(0001) layer has been found in transmission electron microscopy as well as in x-ray diffraction investigations. The sixfold in-plane symmetry of a (0001)-oriented Cr{sub 2}O{sub 3} initial layer leads to three equivalent in-plane orientations of the CrO{sub 2} unit cell as confirmed by electron diffraction and scanning electron microscopy. The growth can be understood by a simple model of the in-plane symmetries of the Al{sub 2}O{sub 3}(0001), Cr{sub 2}O{sub 3}(0001), and CrO{sub 2}(010) lattices. The growth on TiO{sub 2}(100) substrates leads to (100)-oriented CrO{sub 2} films of higher crystalline quality than the ones grown on Al{sub 2}O{sub 3}(0001). Transmission electron microscope images show growth of CrO{sub 2}(100) directly on the TiO{sub 2}(100) substrates and no significant Cr{sub 2}O{sub 3} inclusions within the CrO{sub 2}(100) layer. All contributions to the magnetoresistance (MR) due to anisotropic MR, Lorentz MR, spin disorder, and intergrain tunnelling MR have been determined and partly correlated with the crystalline properties of the samples investigated. For films of both types the intrinsic linear contribution to the high-field MR does not depend on the crystalline quality of the films and supports the suggested intrinsic double-exchange mechanism for CrO{sub 2}. (author)

  15. Stress analysis, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

    Science.gov (United States)

    Annadurai, A.; Manivel Raja, M.; Prabahar, K.; Kumar, Atul; Kannan, M. D.; Jayakumar, S.

    2011-11-01

    The residual stress instituted in Ni-Mn-Ga thin films during deposition is a key parameter influencing their shape memory applications by affecting its structural and magnetic properties. A series of Ni-Mn-Ga thin films were prepared by dc magnetron sputtering on Si(1 0 0) and glass substrates at four different sputtering powers of 25, 45, 75 and 100 W for systematic investigation of the residual stress and its effect on structure and magnetic properties. The residual stresses in thin films were characterized by a laser scanning technique. The as-deposited films were annealed at 600 °C for 1 h in vacuum for structural and magnetic ordering. The compressive stresses observed in as-deposited films transformed into tensile stresses upon annealing. The annealed films were found to be crystalline and possess mixed phases of both austenite and martensite, exhibiting good soft magnetic properties. It was found that the increase of sputtering power induced coarsening in thin films. Typical saturation magnetization and coercivity values were found to be 330 emu/cm 3 and 215 Oe, respectively. The films deposited at 75 and 100 W display both structural and magnetic transitions above room temperature.

  16. Influence of film thickness and oxygen partial pressure on cation-defect-induced intrinsic ferromagnetic behavior in luminescent p-type Na-doped ZnO thin films.

    Science.gov (United States)

    Ghosh, S; Khan, Gobinda Gopal; Varma, Shikha; Mandal, K

    2013-04-10

    In this article, we have investigated the effect of oxygen partial pressure (PO2) and film thickness on defect-induced room-temperature (RT) ferromagnetism (FM) of highly c-axis orientated p-type Na-doped ZnO thin films fabricated by pulse laser deposition (PLD) technique. We have found that the substitution of Na at Zn site (NaZn) can be effective to stabilize intrinsic ferromagnetic (FM) ordering in ZnO thin films with Curie temperature (TC) as high as 509 K. The saturation magnetization (MS) is found to decrease gradually with the increase in thickness of the films, whereas an increase in "MS" is observed with the increase in PO2 of the PLD chamber. The enhancement of ferromagnetic signature with increasing PO2 excludes the possibility of oxygen vacancy (VO) defects for the magnetic origin in Na-doped ZnO films. On the other hand, remarkable enhancement in the green emission (IG) are observed in the photoluminescence (PL) spectroscopic measurements due to Na-doping and that indicates the stabilization of considerable amount of Zn vacancy (VZn)-type defects in Na-doped ZnO films. Correlating the results of PL and X-ray photoelectron spectroscopy (XPS) studies with magnetic measurements we have found that VZn and Na substitutional (NaZn) defects are responsible for the hole-mediated FM in Na-doped ZnO films, which might be an effective candidate for modern spintronic technology.

  17. Observation of strong magnetoelectric coupling and ferromagnetism at room temperature in Fe substituted ferroelectric BaZr0.05Ti0.95O3 thin films

    Science.gov (United States)

    Kumari, Mukesh; Barrionuevo Diestra, Danilo G.; Katiyar, Ram; Shah, Jyoti; Kotnala, R. K.; Chatterjee, Ratnamala

    2017-01-01

    Single phase polycrystalline thin films (˜100 nm) of BaZr0.05(FexTi1-3x/4)0.95O3, with x = 0 (BZT) and 0.015 (BZFT15), were grown on Pt/TiO2/SiO2/Si substrate using pulsed laser deposition technique. Room temperature ferromagnetism with a remanent magnetization (Mr) ˜ 1.1 × 10-1 emu/cm3 and a coercive field (Hc) ˜ 0.1 kOe was observed in BZFT15 film. The ferroelectric domain switching in both BZT and BZFT15 films is confirmed by piezoresponse force microscopy (PFM). The magnetoelectric coupling coefficient (α) measured at room temperature in the BZFT15 film in in-plane magnetized-out of plane polarized configuration (L-T mode) was found to be ˜165 mV/cm Oe. It is argued that the observed ferromagnetism in BZFT15 films arises from the oxygen vacancy (Ov) mediated (Fe3+-Ov-Fe3+) exchange.

  18. Development and optimisation of thin soft ferromagnetic Fe-Co-Ta-N and Fe-Co-Al-N films with in-plane uniaxial anisotropy for HF applications

    Energy Technology Data Exchange (ETDEWEB)

    Bekker, V. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Seemann, K. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)]. E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Forschungszentrum Karlsruhe, Institut fuer Materialforschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2006-01-15

    Thin ferromagnetic Fe-Co-Ta-N and Fe-Co-Al-N films with strong in-plane uniaxial anisotropy were successfully prepared by RF reactive magnetron sputtering and subsequent vacuum field annealing. The magnetic properties of as-deposited and field annealed films were investigated in order to optimise the deposition and annealing conditions. The films exhibit good soft magnetic properties and an excellent thermal stability because of their nanocrystalline microstructure. The critical temperature of degradation of the magnetic properties is around 500{sup o}C; therefore, the films can be integrated in a standard semiconductor CMOS process. After a 1-h heat treatment at 400{sup o}C, the following magnetic properties were achieved: saturation polarisation J{sub s}=1.2T, coercive field {mu}{sub 0}H{sub c}=0.3mT, electrical resistivity {rho}=2x10{sup -6}{omega}m, anisotropy field {mu}{sub 0}H{sub a}=3.5-5mT. This results in a ferromagnetic resonance frequency of f{sub r}=1.8-2.1GHz and initial permeability of {mu}{sub low}=400-300. The influence of intrinsic material parameters, such as saturation polarisation, uniaxial anisotropy field, electrical resistivity and film thickness, on HF permeability was analysed. The frequency-dependent permeability spectra were measured up to 4.5GHz with a strip line parameter.

  19. The study of high Curie temperature ferromagnetism properties in Mn-doped SiC thin film

    Directory of Open Access Journals (Sweden)

    Chaoyang Kang

    2015-01-01

    Full Text Available Mn-doped 3C-SiC film has been prepared onto the Si (111 substrate by employing a molecular beam epitaxy method. The experimental analysis establishes that the prepared sample shows the ferromagnetic property with a relatively high Curie temperature (Tc of 355 K, which is an exciting phenomenon on account of the scarceness in the SiC-based diluted magnetic semiconductor. The analysis derived from the X-ray diffraction and absorption spectroscopy patterns indicates that Mn atoms should react with Si atoms and then form Mn4Si7 compounds. Combined with the theoretical simulation, it is speculated that a new alloy phase of Mn4Si7Cx maybe appear, which should be responsible for the exceptionally high Tc ferromagnetic behavior in the sample.

  20. Dynamic phase reversal of photo-induced precession of magnetization in ferromagnetic (Ga,Mn)As thin film

    Science.gov (United States)

    Li, Hang; Zhang, Xinhui; Liu, Xinyu; Furdyna, Jacek K.

    2015-11-01

    Ultrafast laser-triggered coherent magnetization dynamics in ferromagnetic (Ga,Mn)As films have been investigated by time-resolved magneto-optical spectroscopy. Dynamic phase reversal in the magnetic precession process is observed when the ambient temperature or the external magnetic field is varied. This phenomenon is found to be sensitive to the spontaneous magnetization orientation, and is attributed to the giant magnetic linear dichroism (MLD) effect in (Ga,Mn)As. Our findings suggest that this effect will enable the sensitive measurement of the dynamic phase of in-plane magnetization precession on picosecond time scale in the collective spin excitation in (Ga,Mn)As, thus enabling efficient and ultrafast magneto-optical detection for magnetization dynamics in ferromagnetic semiconductor-based spintronic devices.

  1. Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

    Energy Technology Data Exchange (ETDEWEB)

    Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

    2016-01-15

    The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

  2. Symmetry of Longitudinal Magneto-resistance in the Presence of Multiple Domain Walls in Ferromagnetic Thin Films with Perpendicular Magnetic Anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Xiang Gang; Zhang Xi, E-mail: gxiang@scu.edu.cn [Department of Physics, Sichuan University Chengdu, Sichuan 610064 (China)

    2011-01-01

    Symmetry of the longitudinal mangetoresistance (MR) of ferromagnetic thin films with perpendicular magnetic anisotropy (PMA) in the presence of multiple domain walls (DWs) has been studied. Based on exact solutions, schematic representations of electric fields and MR have been established considering anomalous Hall effect and the effect from the eddy currents in the proximity of domain walls in the ferromagnetic samples with PMA. Symmetry analysis shows that MR with single DW in opposite sweeps is antisymmetric with respect to H = 0, MR with two or 2n (n is integer, n >0) evenly distributed DWs is symmetric, and MR with the three or 2n+1 (n is integer, n >0) evenly distributed DWs is antisymmetric.

  3. Oxygen vacancy induced phase formation and room temperature ferromagnetism in undoped and Co-doped TiO2 thin films

    Science.gov (United States)

    Mohanty, P.; Mishra, N. C.; Choudhary, R. J.; Banerjee, A.; Shripathi, T.; Lalla, N. P.; Annapoorni, S.; Rath, Chandana

    2012-08-01

    TiO2 and Co-doped TiO2 (CTO) thin films deposited at various oxygen partial pressures by pulsed laser deposition exhibit room temperature ferromagnetism (RTFM) independent of their phase. Films deposited at 0.1 mTorr oxygen partial pressure show a complete rutile phase confirmed from glancing angle x-ray diffraction and Raman spectroscopy. At the highest oxygen partial pressure, i.e. 300 mTorr, although the TiO2 film shows a complete anatase phase, a small peak corresponding to the rutile phase along with the anatase phase is identified in the case of CTO film. An increase in O to Ti/(Ti+Co) ratio with increase in oxygen partial pressure is observed from Rutherford backscattering spectroscopy. It is revealed from x-ray photoelectron spectroscopy (XPS) that oxygen vacancies are found to be higher in the CTO film than TiO2, while the valency of cobalt remains in the +2 state. Therefore, the CTO film deposited at 300 mTorr does not show a complete anatase phase unlike the TiO2 film deposited at the same partial pressure. We conclude that RTFM in both films is not due to impurities/contaminants, as confirmed from XPS depth profiling and cross-sectional transmission electron microscopy (TEM), but due to oxygen vacancies. The magnitude of moment, however, depends not only on the phase of TiO2 but also on the crystallinity of the films.

  4. Room-temperature ferromagnetism in thin films of LaMnO3 deposited by a chemical method over large areas.

    Science.gov (United States)

    Vila-Fungueiriño, José Manuel; Rivas-Murias, Beatriz; Rodríguez-González, Benito; Txoperena, O; Ciudad, D; Hueso, Luis E; Lazzari, Massimo; Rivadulla, Francisco

    2015-03-11

    Hole-doping into the Mott insulator LaMnO3 results in a very rich magneto-electric phase diagram, including colossal magnetoresistance and different types of charge and orbital ordering. On the other hand, LaMnO3 presents an important catalytic activity for oxygen reduction, which is fundamental for increasing the efficiency of solid-oxide fuel cells and other energy-conversion devices. In this work, we report the chemical solution (water-based) synthesis of high-quality epitaxial thin films of LaMnO3, free of defects at square-centimeter scales, and compatible with standard microfabrication techniques. The films show a robust ferromagnetic moment and large magnetoresistance at room temperature. Through a comparison with films grown by pulsed laser deposition, we show that the quasi-equilibrium growth conditions characteristic of this chemical process can be exploited to tune new functionalities of the material.

  5. Phase-resolved detection of the spin Hall angle by optical ferromagnetic resonance in perpendicularly magnetized thin films

    Science.gov (United States)

    Capua, Amir; Wang, Tianyu; Yang, See-Hun; Rettner, Charles; Phung, Timothy; Parkin, Stuart S. P.

    2017-02-01

    The conversion of charge current to spin current by the spin Hall effect is of considerable current interest from both fundamental and technological perspectives. Measurement of the spin Hall angle, especially for atomically thin systems with large magnetic anisotropies, is not straightforward. Here we demonstrate a hybrid phase-resolved optical-electrical ferromagnetic resonance method that we show can robustly determine the spin Hall angle in heavy-metal/ferromagnet bilayer systems with large perpendicular magnetic anisotropy. We present an analytical model of the ferromagnetic resonance spectrum in the presence of the spin Hall effect, in which the spin Hall angle can be directly determined from the changes in the amplitude response as a function of the spin current that is generated from a dc charge current passing through the heavy-metal layer. Increased sensitivity to the spin current is achieved by operation under conditions for which the magnetic potential is shallowest at the "Smit point." Study of the phase response reveals that the spin Hall angle can be reliably extracted from a simplified measurement that does not require scanning over time or magnetic field but rather only on the dc current. The method is applied to the Pt-Co/Ni/Co system whose spin Hall angle was to date characterized only indirectly and that is especially relevant for spin-orbit torque devices.

  6. Effect of Cr addition on the structural, magnetic and mechanical properties of magnetron sputtered Ni-Mn-In ferromagnetic shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akkera, Harish Sharma [Indian Institute of Technology Roorkee, Functional Nanomaterials Research Lab, Department of Physics, Roorkee, Uttarakhand (India); Madanapalle Institute of Technology and Science, Department of Physics, Madanapalle, Chittoor, Andhra Pradesh (India); Kaur, Davinder [Indian Institute of Technology Roorkee, Functional Nanomaterials Research Lab, Department of Physics, Roorkee, Uttarakhand (India)

    2016-12-15

    The effect of Cr substitution for In on the structural, martensitic phase transformation and mechanical properties of Ni-Mn-In ferromagnetic shape memory alloy (FSMA) thin films was systematically investigated. X-ray diffraction results revealed that the Ni-Mn-In-Cr thin films possessed purely austenitic cubic L2{sub 1} structure at lower content of Cr, whereas higher Cr content, the Ni-Mn-In-Cr thin films exhibited martensitic structure at room temperature. The temperature-dependent magnetization (M-T) and resistance (R-T) results confirmed that the monotonous increase in martensitic transformation temperatures (T{sub M}) with the addition of Cr content. Further, the room temperature nanoindentation studies revealed the mechanical properties such as hardness (H), elastic modulus (E), plasticity index (H/E) and resistance to plastic deformation (H{sup 3}/E {sup 2}) of all the samples. The addition of Cr content significantly enhanced the hardness (28.2 ± 2.4 GPa) and resistance to plastic deformation H{sup 3}/E{sup 2} (0.261) of Ni{sub 50.4}Mn{sub 34.96}In{sub 13.56}Cr{sub 1.08} film as compared with pure Ni-Mn-In film. As a result, the appropriate addition of Cr significantly improved the mechanical properties with a decrease in grain size, which could be further attributed to the grain boundary strengthening mechanism. These findings indicate that the Cr-doped Ni-Mn-In FSMA thin films are potential candidates for microelectromechanical systems applications. (orig.)

  7. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO{sub 2} thin films deposited by electron beam evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Mohanty, P. [School of Materials Science and Technology, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kabiraj, D. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Mandal, R.K. [Department of Metallurgical Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kulriya, P.K. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sinha, A.S.K. [Department of Chemical Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Rath, Chandana, E-mail: chandanarath@yahoo.com [School of Materials Science and Technology, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India)

    2014-04-15

    TiO{sub 2} thin films deposited by electron beam evaporation technique annealed in either O{sub 2} or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O{sub 2} atmosphere. While the pristine film shows a super-paramagnetic behavior, both O{sub 2} and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O{sub 2} annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O{sub 2} annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O{sub 2} annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO{sub 2} film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO{sub 2} films were deposited by e-beam evaporation technique and post annealed under O{sub 2}/Ar at 500 °C. • The pristine film shows SPM behavior where as O{sub 2} and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O{sub 2} annealed film than the Ar annealed one. • The higher M{sub s} in O{sub 2

  8. Theoretic 3-D study of the high-frequency magnetic moment dynamics in thin ferromagnetic films with in-plane uniaxial anisotropy by considering eddy-current generation

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K., E-mail: klaus.seemann@kit.edu [Karlsruhe Institute of Technology KIT (Campus North), Institute for Applied Materials, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Leiste, H.; Krueger, K. [Karlsruhe Institute of Technology KIT (Campus North), Institute for Applied Materials, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2012-06-15

    In the present paper, theoretic investigations of polarisation vector precession trajectories represented by a macro spin in ferromagnetic films with in-plane uniaxial anisotropy were realised. For this purpose, the Landau-Lifschitz-Gilbert differential equation (LLG) in combination with the Maxwell equations were solved for three dimensions by considering a linear progression of the magnetisation or polarisation with an external field. The frequency and time dependent polarisation trajectories illustrate how a magnetic moment precesses if effective damping and eddy-currents impacts its motion. For computation, typical parameter values like the saturation polarisation J{sub s}={mu}{sub 0}{center_dot}M{sub s}=1.4 T and in-plane uniaxial anisotropy {mu}{sub 0}{center_dot}H{sub u}=4.5 mT were employed. The main focus of simulation was on the variation of the effective damping parameter {alpha}{sub eff} between 0.01 and 0.05 and ferromagnetic film thickness t{sub m} between 200 nm and 1200 nm. The frequency-dependent calculations were carried out between 50 MHz and 6 GHz. The time-dependent simulations were done for a duration between 5 and 30 ns. - Highlights: Black-Right-Pointing-Pointer Frequency- and time domain solution of the LLG and Maxwell differential equation. Black-Right-Pointing-Pointer 3D magnetic moment or macro spin trajectories by eddy-current impact. Black-Right-Pointing-Pointer Progression of a magnetic excitation field in thin ferromagnetic films. Black-Right-Pointing-Pointer Transient response evaluation of uniform magnetic moments excited by an r.f. field.

  9. Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. J.; Xing, G. Z., E-mail: guozhong.xing@unsw.edu.au; Yi, J. B.; Li, S. [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia); Chen, T. [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong); Ionescu, M. [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)

    2014-01-06

    Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200 Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu{sup 3+} ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

  10. Tunnel magnetoresis-tance(TMR) in ferromagnetic metalinsulator granular films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    We review the recently discovered tunnel-type giant magnetoresistance (GMR) in ferromagnetic metal- insulator granular thin films, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal particles. The theoretical and ex-perimental results including electrical resistivity, magnetore-sistance and their temperature dependence are described. Limitations to the applications of the ferromagnetic metal- insulator granular films are also discussed. Additionally, a brief survey of another two magnetic properties, high- fre-quency property and giant Hall effect (GHE) associated strongly with the granular structures is also presented.

  11. Suppression of ferromagnetism and observation of quantum well states in epitaxial thin films of the cubic ruthenate BaRuO3

    Science.gov (United States)

    Burganov, Bulat; Paik, Hanjong; Shen, Kyle; Schlom, Darrell

    The pseudocubic perovskite ruthenates ARuO3, where A is alkaline earth metal, are correlated materials where Hund's coupling drives correlations and leads to a low coherence scale, large renormalization, and formation of local moments. The ferromagnetic BaRuO3 has an ideal cubic structure and a larger bandwidth, compared to its GdFeO3-distorted counterparts, CaRuO3 and SrRuO3. In stark contrast to SrRuO3, which is a Fermi liquid below TC, BaRuO3 exhibits critical fluctuations near TC that are enhanced under hydrostatic pressure, which suppresses the Fermi liquid coherence scale and TC and drives a crossover into non-FL regime. Here we use ARPES to characterize the momentum-resolved electronic structure of strained ultrathin BaRuO3 films grown in situ by molecular beam epitaxy. The films on STO (001) are metallic down to 2 u.c. thickness and manifest clearly defined subbands of well-defined quasiparticles which arise due to quantum confinement effects. We observe that the bands are moderately renormalized compared to bare GGA bands and discover that the ferromagnetism can be suppressed in the atomically thin limit. We discuss our results on BaRuO3 in the context of our recent ARPES studies of the other perovskite ruthenates, SrRuO3 and CaRuO3.

  12. Microstructure of epitaxial thin films of the ferromagnetic shape memory alloy Ni{sub 2}MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Eichhorn, Tobias

    2011-12-09

    This work is concerned with the preparation and detailed characterization of epitaxial thin films of the Heusler compound Ni{sub 2}MnGa. This multiferroic compound is of both technological and scientific interest due to the outstanding magnetic shape memory (MSM) behavior. Huge magnetic-field-induced strains up to 10 % have been observed for single crystals close to a Ni{sub 2}MnGa composition. The effect is based on a redistribution of crystallographic twin variants of tetragonal or orthorhombic symmetry. Under the driving force of the external magnetic field twin boundaries can move through the crystal, which largely affects the macroscopic shape. The unique combination of large reversible strain, high switching frequency and high work output makes the alloy a promising actuator material. Since the MSM effect results from an intrinsic mechanism, MSM devices possess great potential for implementation in microsystems, e.g. microfluidics. So far significant strains, in response to an external magnetic field, have been observed for bulk single crystals and foams solely. In order to take advantage of the effect in applications concepts for miniaturization are needed. The rather direct approach, based on epitaxial thin films, is explored in the course of this work. This involves sample preparation under optimized deposition parameters and fabrication of freestanding single-crystalline films. Different methods to achieve freestanding microstructures such as bridges and cantilevers are presented. The complex crystal structure is extensively studied by means of X-ray diffraction. Thus, the different crystallographic twin variants that are of great importance for the MSM effect are identified. In combination with microscopy the twinning architecture for films of different crystallographic orientation is clarified. Intrinsic blocking effects in samples of (100) orientation are explained on basis of the variant configuration. In contrast, a promising twinning microstructure

  13. Origin of ferromagnetism in aluminum-doped TiO{sub 2} thin films: Theory and experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xianjie; Song, Yongli; Sui, Yu, E-mail: suiyu@hit.edu.cn, E-mail: jtang2@uwyo.edu, E-mail: xfhan@iphy.ac.cn; Zhang, Yu [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Tao, L. L.; Feng, J. F.; Han, X. F., E-mail: suiyu@hit.edu.cn, E-mail: jtang2@uwyo.edu, E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Tang, Jinke, E-mail: suiyu@hit.edu.cn, E-mail: jtang2@uwyo.edu, E-mail: xfhan@iphy.ac.cn [Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071 (United States); Song, Bo; Wang, Yi; Wang, Yang [Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001 (China)

    2014-12-29

    In this paper, we combine first-principles calculations and experiments to investigate the magnetic properties of aluminum-doped TiO{sub 2} films of rutile structure. Density-functional theory with generalized gradient approximation based calculations were carried out for three cases, where the TiO{sub 2} lattice contains oxygen vacancies V{sub O} only, an oxygen is substituted by a fluorine atom, or a Ti is substituted by an aluminum. Magnetic moments associated with the formation of Ti{sup 3+} ions are found in all cases but they couple differently resulting in different magnetic states. Al-doped samples prepared in our labs exhibit ferromagnetism at room temperature with a T{sub C} near 340 K. The experimental results are consistent with the first principles calculations, and the magnetism is associated with the V{sub O} defect electrons induced by the Al doping. The defect electron occupies nearby Ti sites giving rise to the Ti{sup 3+} moments and, at the same time, has spatially extended wavefunctions assuring overlapping between neighbors.

  14. Theory of Strain-Controlled Magnetotransport and Stabilization of the Ferromagnetic Insulating Phase in Manganite Thin Films

    Science.gov (United States)

    Mukherjee, Anamitra; Cole, William S.; Woodward, Patrick; Randeria, Mohit; Trivedi, Nandini

    2013-04-01

    We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic charge-ordered insulator, previously inaccessible to experiments, becomes stable.

  15. Vectorial magnetometry using magnetooptic Kerr effect including first- and second-order contributions for thin ferromagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Kuschel, T; Wilkens, H; Schubert, R; Wollschlaeger, J [Fachbereich Physik, Universitaet Osnabrueck, Barbarastrasse 7, D-49069 Osnabrueck (Germany); Bardenhagen, H [Physikalisches Institut, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg (Germany); Hamrle, J; Pistora, J, E-mail: joachim.wollschlaeger@uos.de [Department of Physics and Nanotechnology Centre, VSB - Technical University of Ostrava, 17. listopadu 15, 70833 Ostrava-Poruba (Czech Republic)

    2011-07-06

    A new combination of different vectorial magnetometry techniques using magnetooptic Kerr effect is described. The processing of the experimental data contains the separation of linear and quadratic parts of the magnetization curves and determination of all three components of the magnetization vector in units of Kerr rotation without any normalization to the saturation values. The experimental procedure includes measurements with parallel and perpendicular polarized incident light and an external magnetic field parallel and perpendicular to the plane of incidence of light. The determination of the complex Kerr amplitude and the theoretic description of the data processing in assumption of small angles of incidence and also for larger angles of incidence using adequate scaling to the mean saturation value validate this vectorial magnetometry method. In the case of an absent out-of-plane component of the magnetization vector, the complete reversal process can easily be reconstructed and interpreted by monodomain states and domain splitting. The measurement procedure and the processing of the data are demonstrated for an ultra-thin epitaxial Fe film on MgO(0 0 1).

  16. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  17. Ferromagnetic resonance studies and magnetization curvesof Co-Cr and Co-Cr/Ni-Fe thin films

    NARCIS (Netherlands)

    Stam, Maria Theresia Helena Clasina Wilhelmina

    1989-01-01

    In this thesis CoCr and CoCr/NiFe double layers are studied by ferromagnetic resonance. The coercivity and the initial susceptibility of these layers are measured. An approximation of the Kooy and Enz model which is suitable for calculating the initial suceptibility is presented [3.36]. A theoretica

  18. Ferromagnetic resonance, transverse bias initial inverse susceptibility and torque studies of magnetic properties of Co2MnSi thin films

    Directory of Open Access Journals (Sweden)

    Devolder T.

    2013-01-01

    Full Text Available Magnetic properties of Co2MnSi thin films of 20 nm and 50 nm in thickness grown by radio frequency sputtering on a-plane sapphire substrates have been studied. X-ray diffraction (XRD revealed that the cubic Co2MnSi axis is normal to the substrate and that well defined preferential in-plane orientations are present. The static magnetic properties were studied at room temperature by conventional magneto-optical Kerr effect (MOKE, transverse bias initial inverse susceptibility and torque (TBIIST MOKE. The dynamic magnetic properties were investigated by micro-strip ferromagnetic resonance (MS-FMR at room temperature. The resonance and TBIIST measurements versus the direction of the in-plane applied magnetic field reveal that the in-plane anisotropy results from the superposition of a two-fold and a four-fold symmetry. The directions of the principal axes of the twofold anisotropy are sample dependent. The angular dependence of remanent normalized magnetizations and coercive fields, studied by MOKE are analyzed within the frame of a coherent rotation model. A good agreement is observed between the field anisotropy values obtained from MSFMR and from TBIIST data. Frequency and angular dependence of FMR linewidth has been studied. Apparent damping coefficient of 0.0112 has been measured for 50 nm thick sample.

  19. Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

    Science.gov (United States)

    Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2016-06-07

    Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

  20. Magnetostrictive thin films for microwave spintronics.

    Science.gov (United States)

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  1. Magnetization of Coupled Ultrathin Ferromagnetic Films

    Institute of Scientific and Technical Information of China (English)

    WANG Huai-Yu; ZHOU Yun-Song; WANG Chong-Yu

    2002-01-01

    The magnetization of coupled ferromagnetic films is calculated by Green's function method. The coupling can either be ferromagnetic or antiferromagnetic. For the latter case, a concept of pseudo-spin is suggested to make calculation possible. A pseudo-spin is actually an anti-spin with its properties being analogue to other known anti particles such as a hole. The decreasing of Curie point as the coupling strength decays is computed. It is noted that with the same strength, antiferromagnetic coupling has higher Curie point than ferromagnetic coupling.

  2. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  3. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  4. Ferromagnetism and increased ionicity in epitaxially grown TbMnO3 films

    NARCIS (Netherlands)

    Rubi, D.; de Graaf, C.; Daumont, C. J. M.; Mannix, D.; Broer, R; Noheda, B

    2009-01-01

    Thin films of TbMnO3 have been grown on SrTiO3 substrates. The films grow under compressive strain and are only partially clamped to the substrate. This produces remarkable changes in the magnetic properties and, unlike the bulk material, the films display ferromagnetic interactions below the orderi

  5. Room temperature ferromagnetism with large magnetic moment at low field in rare-earth-doped BiFeO₃ thin films.

    Science.gov (United States)

    Kim, Tae-Young; Hong, Nguyen Hoa; Sugawara, T; Raghavender, A T; Kurisu, M

    2013-05-22

    Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

  6. Theoretic 3-D study of the high-frequency magnetic moment dynamics in thin ferromagnetic films with in-plane uniaxial anisotropy by considering eddy-current generation

    Science.gov (United States)

    Seemann, K.; Leiste, H.; Krüger, K.

    2012-06-01

    In the present paper, theoretic investigations of polarisation vector precession trajectories represented by a macro spin in ferromagnetic films with in-plane uniaxial anisotropy were realised. For this purpose, the Landau-Lifschitz-Gilbert differential equation (LLG) in combination with the Maxwell equations were solved for three dimensions by considering a linear progression of the magnetisation or polarisation with an external field. The frequency and time dependent polarisation trajectories illustrate how a magnetic moment precesses if effective damping and eddy-currents impacts its motion. For computation, typical parameter values like the saturation polarisation Js=μ0·Ms=1.4 T and in-plane uniaxial anisotropy μ0·Hu=4.5 mT were employed. The main focus of simulation was on the variation of the effective damping parameter αeff between 0.01 and 0.05 and ferromagnetic film thickness tm between 200 nm and 1200 nm. The frequency-dependent calculations were carried out between 50 MHz and 6 GHz. The time-dependent simulations were done for a duration between 5 and 30 ns.

  7. The correlation length in thin film and semi-infinite medium

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1983-03-01

    Correlation lengths in directions parallel and perpendicular to a surface of a thin ferromagnetic film and a semi-infinite ferromagnet are calculated. Their dependences both on temperature and distance to a surface are discussed.

  8. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  9. Optimization of Pr(0.9)Ca(0.1)MnO(3) thin films and observation of coexisting spin-glass and ferromagnetic phases at low temperature.

    Science.gov (United States)

    Svedberg, M; Majumdar, S; Huhtinen, H; Paturi, P; Granroth, S

    2011-09-28

    Optimization of thin films of small bandwidth manganite, Pr(1-x)Ca(x)MnO3 (for x = 0.1), and their magnetic properties are investigated. Using different pulsed laser deposition (PLD) conditions, several films were deposited from the stoichiometric target material on SrTiO3 (001) substrate and their thorough structural and magnetic characterizations were carried out using x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy (XPS), SQUID magnetometry and ac susceptibility measurements. A systematic investigation shows that irrespective of the growth temperature (between 550 and 750 °C), all the as-deposited films have twin boundaries and magnetic double phases. Post-annealing in partial or full oxygen pressure removes the extra phase and the twin boundaries. Zero-field-cooled magnetization data show an antiferromagnetic to paramagnetic transition at around 100 K whereas the field-cooled magnetization data exhibit a paramagnetic to ferromagnetic transition close to 120 K. However, depending on the oxygen treatments, the saturation magnetization and Curie temperature of the films change significantly. Redistribution of oxygen vacancies due to annealing treatments leading to a change in ratio of Mn3+ and Mn4+ in the films is observed from XPS measurements. Low temperature (below 100 K) dc magnetization of these films shows metamagnetic transition, high coercivity and irreversibility magnetizations, indicating the presence of a spin-glass phase at low temperature. The frequency dependent shift in spin-glass freezing temperature from ac susceptibility measurement confirms the coexistence of spin-glass and ferromagnetic phases in these samples at low temperature.

  10. An Extension Landau-Lifshitz Model in Studying Soft Ferromagnetic Films

    Institute of Scientific and Technical Information of China (English)

    Jing-na Li; Xiao-feng Wang; Zheng-an Yao

    2007-01-01

    In this paper, we propose a model in studying soft ferromagnetic films, which is readily accessible experimentally. By using penalty approximation and compensated compactness, we prove that the dynamical equation in thin film has a local weak solution. Moreover, the corresponding linear equation is also dealt with in great detail.

  11. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  12. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  13. Amorphous grain boundary layers in the ferromagnetic nanograined ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Straumal, B.B., E-mail: straumal@mf.mpg.de [National University of Science and Technology ' Moscow Institute of Steel and Alloys, MISiS' , Leninsky prospect 4, 119991 Moscow (Russian Federation); Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432 (Russian Federation); Karlsruher Institut fuer Technologie, Institut fuer Nanotechnologie, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Mazilkin, A.A.; Protasova, S.G. [Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432 (Russian Federation); Max-Planck-Institut fuer Intelligente Systeme (former Institut fuer Metallforschung), Heisenbergstrasse 3, 70569 Stuttgart (Germany); Myatiev, A.A. [National University of Science and Technology ' Moscow Institute of Steel and Alloys, MISiS' , Leninsky prospect 4, 119991 Moscow (Russian Federation); Straumal, P.B. [National University of Science and Technology ' Moscow Institute of Steel and Alloys, MISiS' , Leninsky prospect 4, 119991 Moscow (Russian Federation); Institut fuer Materialphysik, Universitaet Muenster, Wilhelm-Klemm-Str. 10, D-48149 Muenster (Germany); Goering, E. [Max-Planck-Institut fuer Intelligente Systeme (former Institut fuer Metallforschung), Heisenbergstrasse 3, 70569 Stuttgart (Germany); and others

    2011-12-01

    Pure ZnO thin films were obtained by the wet chemistry ('liquid ceramics') method from the butanoate precursors. Films consist of dense equiaxial nanograins and reveal ferromagnetic behaviour. The structure of the ZnO films was studied by the high-resolution transmission electron microscopy. The intergranular regions in the nanograined ZnO films obtained by the 'liquid ceramics' method are amorphous. It looks like fine areas of the second amorphous phase which wets (covers) some of the ZnO/ZnO grain boundaries. Most probably these amorphous intergranular regions contain the defects which are responsible for the ferromagnetic behaviour.

  14. Sol-gel preparation of La-doped bismuth ferrite thin film and its low-temperature ferromagnetic and ferroelectric properties

    Institute of Scientific and Technical Information of China (English)

    YAN Fuxue; ZHAO Gaoyang; SONG Na

    2013-01-01

    Bi0.85La0.15FeO3 thin film was prepared on ATO glass substrates by sol-gel technique.The effect of La doping on phase structure,film surface quality,ion valence,and ferroelectric/magnetic properties of Bi0.85La0.15FeO3 film were investigated.La doping suppressed the formation of impurity phases and the transition of Fe3+ to Fe2+ ions at room temperature.Compared with the un-doped BiFeO3,La-doping also increased the average grain size and the film density,which resulted in the decrease of film leakage current density.The remanent polarization and saturation magnetization were enhanced significantly by La doping.The remanent polarization of Bi0.85La0.15FeO3 films gradually decreased while saturation magnetization increased with the decrcase of measuring temperature within a range from 50 to 300 K.

  15. Ferromagnetism in laser ablated ZnO and Mn-doped ZnO thin films: A comparative study from magnetization and Hall effect measurements

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Hoa Hong, E-mail: nguyen.hoahong@univ-tours.f [Laboratoire LEMA, UMR 6157 CNRS - Universite F. Rabelais, Parc de Grandmont, 37200 Tours (France); Chikoidze, Ekaterina; Dumont, Yves [Laboratoire GeMAC, UMR 8635 CNRS - Universite de Versailles, Place A. Briand, 92195 Meudon (France)

    2009-11-15

    Room temperature FM was observed in pristine ZnO thin films grown by pulsed laser deposition on Al{sub 2}O{sub 3} substrates. It seems to originate from other defects but not oxygen vacancies. Magnetization of thinner films is much larger than that of the thicker films, indicating that defects are mostly located at the surface and/or the interface between the film and the substrate. Data on the Fe:ZnO and Mn:ZnO films show that a transition-metal doping does not play any essential role in introducing the magnetism into ZnO. In the case of Mn doping, the magnetic moment could be very slightly enhanced. Hall effect measurements reveal that an incorporation of Mn does not change the carrier type, but decreases the carrier concentration, and increases the Hall mobility, resulting in more resistive Mn:ZnO films. Since no anomalous Hall effect was observed, it is understood that the observed FM is not due to the interaction between the free-carrier and the Mn impurity.

  16. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  17. Laser stimulated kinetics effects on the phase transition of the ferromagnetic/superconducting MgB{sub 2}/(CrO{sub 2}) bilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    AlZayed, N.S. [Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Kityk, I.V., E-mail: ikityk@el.pcz.czest.pl [Faculty of Electrical Engineering, Czestochowa University Technology, Armii Krajowej 17, PL-42201 Czestochowa (Poland); Soltan, S. [Max Planck Institute, Solid State Research, D-70569 Stuttgart (Germany); Physics Department, Faculty of Science, Helwan University, 11798 Helwan, Cairo (Egypt); Wojciechowski, A. [Faculty of Electrical Engineering, Czestochowa University Technology, Armii Krajowej 17, PL-42201 Czestochowa (Poland); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St., 50, 79010 Lviv (Ukraine); Lakshminarayana, G. [Materials Science and Technology Division (MST-7), Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Shahabuddin, M. [Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2014-05-01

    Graphical abstract: Dependence of resistance versus temperature for different power densities. The nonzero value is generated from the bottom CrO{sub 2} resistive layer. The onset transition temperature is our reference for the enhancement value. - Highlights: • Photoinduced enhancement of critical temperature in MgB{sub 2}–Cr{sub 2}O{sub 3} films was found. • Crucail role of electron–phonon interacton was shown. • Optimal ratio fundamental/SHG intensities was varied within 4:1 and 6:1. - Abstract: Using bicolor laser treatment by Nd:YAG 20 ns laser (1064–532 nm) and 180 ns CO{sub 2} laser beams (10.6–5.3 μm) it was shown a possibility of critical temperature enhancement in ferromagnetic superconducting MgB{sub 2}/CrO{sub 2} bilayer films. The role of the phonon sub-system effectively interacting with 3d Cr originating localized trapping levels is discussed. The pump–probe laser kinetics for the probing second harmonic generation at 1064 nm is explored in details to show principal role of the localized trapping levels. The relaxation of the processes after the switching off the photo inducing beams show the disappearance of the enhanced superconductivity after the 20–30 s. The temperature dependence of the resistance show nonlinear dependence versus the pumping power and different optimal fundamental to writing power density beams ratio.

  18. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  19. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  20. Bridging amount of spin-glasses over ferromagnetic/antiferromagnetic thin films and bit-cell dispersion of exchange bias in corresponding TA-MRAM devices

    Science.gov (United States)

    Akmaldinov, Kamil; Ducruet, Clarisse; Alvarez-Herault, Jeremy; Baltz, Vincent

    2015-03-01

    For thermally-assisted magnetic random access memories (TA-MRAM), lowering bit-cells dispersions of exchange bias is necessary. In this study, we prove that spin-glass-like phases (SG) spread over the ferromagnetic/antiferromagnetic (F/AF) storage layer are the main cause of such distributions once the film is nanofabricated into a device. In particular, we show that the less the SG, the lower the bit-cell dispersion. More precisely, the amount of SG was varied from sample to sample by sputtering various AFs: IrMn, FeMn and their alloys. Blocking temperature distributions were measured to quantify the amount of SG at the wafer level. The wafers were then patterned to obtain 1kb devices and all the cells were tested electrically. Finally, the resulting loop shift cumulative distribution functions accounting for the bit-cell dispersions were correlated to the initial amount of SG. In addition to bridging the gap between fundamental SG and a technological application, we also demonstrated that blocking temperature distributions are a versatile method to qualify TA-MRAM production batches before processing. Univ. Grenoble-Alpes/CNRS/INAC-CEA, 38000 Grenoble, France.

  1. Ion-irradiation-assisted phase selection in single crystalline Fe7Pd3 ferromagnetic shape memory alloy thin films: from fcc to bcc along the Nishiyama-Wassermann path.

    Science.gov (United States)

    Arabi-Hashemi, A; Mayr, S G

    2012-11-09

    When processing Fe-Pd ferromagnetic shape memory thin films, selection of the desired phases and their transformation temperatures constitutes one of the largest challenges from an application point of view. In the present contribution we demonstrate that irradiation with 1.8 MeV Kr(+) ions is the method of choice to achieve this goal: Single crystalline Fe(7)Pd(3) thin films that are grown with molecular beam epitaxy on MgO (001) substrates and subsequently irradiated with ions reveal a phase transformation along the whole phase transformation path ranging from fcc austenite to bcc martensite. While for 10(14) ions/cm(2) a fcc-fct phase transformation is observed, increasing the fluence to 5 × 10(14) ions/cm(2) and 5 × 10(15) ions/cm(2) leads to a phase transformation to the bcc phase. Pole figure measurements reveal an orientation relationship for the fcc-bcc phase transformation according to Nishiyama and Wassermann.

  2. Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Remes, Zdenek [Institute of Physics ASCR v.v.i., Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Varga, Marian [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Chou, Hsiung [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University of Education, Pingtung 900, Taiwan (China); Kromka, Alexander [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Horak, Pavel [Nuclear Physics Institute, 250 68 Rez (Czech Republic)

    2015-11-15

    The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure. - Highlights: • Nitrogen implanted nanocrystalline diamond films exhibit ferromagnetism at room temperature. • Nitrogen implants made a Raman deviation from the typical nanocrystalline diamond films. • The ferromagnetism induced from the structure distortion is dominant at low temperature.

  3. Abnormal magnetic ordering and ferromagnetism in perovskite ScMnO3 film

    Science.gov (United States)

    Wang, F.; Zhang, Y. Q.; Liu, W.; Ning, X. K.; Bai, Y.; Dai, Z. M.; Ma, S.; Zhao, X. G.; Li, S. K.; Zhang, Z. D.

    2015-06-01

    Bulk multiferroic ScMnO3 is the stable hexagonal phase, and it is very difficult to prepare its perovskite orthorhombic phase even under high pressure. We fabricated the orthorhombic ScMnO3 thin film by pulsed laser deposition through suitable substrate LaAlO3 and found that nano-scale twin-like domains are naturally formed in the thin film. Magnetic properties of the orthorhombic ScMnO3 thin films show that, besides normal antiferromagnetic ordering at 47 K, an anomalous magnetic transition occurs at 27 K for 60 nm film and at 36 K for 150 nm film only along the c-axis, which is absent in the ab-plane. Moreover, the second magnetic transition for both films is suppressed when the applied field increases from 1 kOe to 10 kOe. In addition, the ferromagnetism shows up in both films at 10 K, and saturation magnetization increases dramatically in 60 nm film compared with 150 nm film. We propose that the second magnetic transition might be more of lattice strain effect and also related to magnetism-induced ferroelectric polarization in orthorhombic RMnO3 thin films and low-temperature ferromagnetic properties in our films originate from the nano-scale twin-like domain structure.

  4. Spin-wave modes of ferromagnetic films

    Science.gov (United States)

    Arias, R. E.

    2016-10-01

    The spin-wave modes of ferromagnetic films have been studied for a long time experimentally as well as theoretically, either in the magnetostatic approximation or also considering the exchange interaction. A theoretical method is presented that allows one to determine with ease the exact frequency dispersion relations of dipole-exchange modes under general conditions: an obliquely applied magnetic field, and surface boundary conditions that allow for partial pinning, which may be of different origins. The method is a generalization of Green's theorem to the problem of solving the linear dynamics of ferromagnetic spin-wave modes. Convolution integral equations for the magnetization and the magnetostatic potential of the modes are derived on the surfaces of the film. For the translation-invariant film these become simple local algebraic equations at each in-plane wave vector. Eigenfrequencies result from imposing a 6 ×6 determinant to be null, and spin-wave modes follow everywhere through solving linear 6 ×6 inhomogeneous systems. An interpretation of the results is that the Green's functions represent six independent plane-wave solutions to the equations of motion, with six associated complex perpendicular wave vectors: volume modes correspond to the cases in which two of these are purely real at a given frequency. Furthermore, the convolution extinction equations enforce the boundary conditions: this is possible at specific eigenfrequencies for a given in-plane wave vector. Magnetostatic modes may also be obtained in detail. At low frequencies and for some obliquely applied magnetic fields, magnetostatic and dipole-exchange volume modes may have forward or backward character depending on the frequency range.

  5. Control of room-temperature defect-mediated ferromagnetism in VO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Tsung-Han, E-mail: tyang3@ncsu.edu [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States); Nori, Sudhakar; Mal, Siddhartha; Narayan, Jagdish [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

    2011-09-15

    We report interesting ferromagnetic properties and their control in a vanadium-based oxide system driven by stoichiometric defects. Vanadium oxide (VO{sub 2}) thin films were grown on c-plane sapphire substrates by a pulsed laser deposition technique under different ambient conditions. The ferromagnetism of the epitaxial VO{sub 2} films can be switched on and off by altering the cooling ambient parameters. In addition, the saturated magnetic moments and coercivity of the VO{sub 2} films were found to be a function of the oxygen partial pressure during the growth process. The room-temperature ferromagnetic properties of VO{sub 2} films were correlated with the nature of the microstructure and the growth parameters. The origin of the induced magnetic properties are qualitatively understood to stem from intrinsic structural and stoichiometric defects.

  6. Electrically detected ferromagnetic resonance

    NARCIS (Netherlands)

    Goennenwein, S.T.B.; Schink, S.W.; Brandlmaier, A.; Boger, A.; Opel, M.; Gross, R.; Keizer, R.S.; Klapwijk, T.M.; Gupta, A.; Huebl, H.; Bihler, C.; Brandt, M.S.

    2007-01-01

    We study the magnetoresistance properties of thin ferromagnetic CrO2 and Fe3O4 films under microwave irradiation. Both the sheet resistance ρ and the Hall voltage VHall characteristically change when a ferromagnetic resonance (FMR) occurs in the film. The electrically detected ferromagnetic resonanc

  7. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  8. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  9. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  10. A hysteresis model for an orthogonal thin-film magnetometer

    NARCIS (Netherlands)

    Ridder, de René M.; Fluitman, Jan H.

    1990-01-01

    The operation of a ferromagnetic thin-film magnetometer using the anisotropic magnetoresistance effect in a permalloy film is discussed. Measurements showed the presence of a hysteresis effect not predicted by available models. It is shown that the sensitivity of the magnetometer is predicted by app

  11. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  12. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  13. Spin Waves in a Ferromagnetic Film with a Periodic System of Antidots

    Directory of Open Access Journals (Sweden)

    V.V. Kulish

    2015-03-01

    Full Text Available In the paper, spin waves in a thin film (composed of a uniaxial ferromagnet with a two-dimensional periodical system of antidots are studied. The film ferromagnet is considered to have the “easy axis” type. To describe such waves, the magnetostatic approximation with account for the magnetic dipole-dipole interaction, the exchange interaction and the anisotropy effects is used. For such waves, an equation for the magnetic potential is derived; for the case of remote antidots, the dispersion relation and the transverse wavenumber spectrum are found. For the case of a film thin compared to the exchange length and for the case of a film bounded by a high-conductivity metal, the longitudinal wavenumber spectrum and the frequency spectrum of such spin waves are also obtained.

  14. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  15. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  16. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  17. Zapping thin film transistors

    NARCIS (Netherlands)

    Golo-Tosic, N.; Kuper, F.G.; Mouthaan, A.J.

    2002-01-01

    It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD

  18. Green's function theory for a magnetic impurity layer in a ferromagnetic Ising film with transverse field

    OpenAIRE

    Leite, R. V.; Morais, B. T. F.; Pereira Jr, J. Milton; Filho, R. N. Costa

    2004-01-01

    A Green's function formalism is used to calculate the spectrum of localized modes of an impurity layer implanted within a ferromagnetic thin film. The equations of motion for the Green's functions are determined in the framework of the Ising model in a transverse field. We show that depending on the thickness, exchange and effective field parameters, there is a ``crossover'' effect between the surface modes and impurity localized modes. For thicker films the results show that the degeneracy o...

  19. Magnetization Profiles of Ferromagnetic Ising Films in a Transverse Field

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Guang; PAN Shao-Hua; YANG Guo-Zhen

    2000-01-01

    Within the framework of the mean field theory, we study the magnetization profiles of ferromagnetic Ising films in a transverse field. By the transfer matrix method, we first derive a general nonlinear equation for phase transition temperatures and then calculate the magnetization profiles of the system. The method proposed here can be applied to ferromagnetic films with arbitrary surface layer number, bulk layer number, exchange interaction constants and transverse fields.

  20. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  1. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  2. Boundary Effects in Magnetization Reversal of Micro-square Ferromagnetic Thin Films%小尺寸正方形铁磁薄膜边界效应对磁化翻转过程的影响

    Institute of Scientific and Technical Information of China (English)

    李梅; 苏垣昌; 胡经国

    2012-01-01

    用自旋动力学方法系统地研究磁偶极相互作用表现的边界效应对小尺寸正方形铁磁薄膜的磁化翻转过程的影响.在确定的磁偶极相互作用强度下,针对不同的单轴各向异性强度和不同的磁化角(外磁场与易轴间的夹角),具体给出矫顽场与磁化角及单轴各向异性强度之间的依赖关系和一些有代表性的磁滞回线,并给出磁化翻转过程中一些有代表性的微观磁结构.模拟结果表明:磁偶极相互作用表现的边界钉扎作用与单轴各向异性场之间的竞争决定磁滞回线的形状和矫顽场的大小,从而在不同磁化角情况下会导致不同的矫顽场机理.本文提出可有效地描述正方形铁磁性薄膜复杂微观磁畴结构的形成与演变的五磁畴模型.这种五磁畴模型既能直接揭示单轴各向异性正方形铁磁薄膜的几何特性和物理特性,也方便于磁化翻转过程的分析.%Boundary effects in magnetization reversal induced by dipole-dipole interaction in micro-square ferromagnetic films are studied by means of spin dynamics simulation. Fixing strength of dipole-dipole interaction, coercive force is calculated as functions of strength of uniaxial anisotropy and magnetization angle θ (the angle between applied field and easy axis). Typical hysteresis loops and spin configurations are given. It shows that shape of hysteresis loop and magnitude of coercive force are determined by a competition between boundary pinning effect and uniaxial anisotropic field,which leads to different coercivity mechanism under different θ. An effective five-magnetic-domain model is proposed to describe spin configurations of square ferromagnetic thin films. The model shows conveniently geometric and physical properties of square ferromagnetic thin films with uniaxial anisotropy as well as its magnetization reversal process.

  3. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  4. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  5. The ferroelectric and ferromagnetic characterization of CoFe{sub 2}O{sub 4}/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-PbTiO{sub 3} multilayered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Guo Hongli; Liu Guo; Li Xuedong; Li Haimin [College of Materials Science and engineering, Sichuan University, Chengdu 610064 (China); Zhang Wanli [College of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhu Jianguo, E-mail: nic0400@scu.edu.cn [College of Materials Science and engineering, Sichuan University, Chengdu 610064 (China); Xiao Dingquan [College of Materials Science and engineering, Sichuan University, Chengdu 610064 (China)

    2011-05-15

    The multiferroic (PMN-PT/CFO){sub n} (n = 1,2) multilayered thin films have been prepared on SiO{sub 2}/Si(1 0 0) substrate with LNO as buffer layer via a rf magnetron sputtering method. The structure and surface morphology of multilayered thin films were determined by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. The smooth, dense and crack-free surface shows the excellent crystal quality with root-mean-square (RMS) roughness only 2.9 nm, and average grain size of CFO thin films on the surface is about 44 nm. The influence of the thin films thickness size, periodicity n and crystallite orientation on their properties including ferroelectric, ferromagnetic properties in the (PMN-PT/CFO){sub n} multilayered thin films were investigated. For multilayered thin films with n = 1 and n 2, the remanent polarization Pr are 17.9 {mu}C/cm{sup 2} and 9.9 {mu}C/cm{sup 2}; the coercivity H{sub c} are 1044 Oe and 660 Oe, respectively. In addition, the relative mechanism are also discussed.

  6. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  7. Critical thickness for ferromagnetism in insulating LaMnO3 films

    Science.gov (United States)

    Renshaw Wang, X.; Poccia, N.; Leusink, D. P.; Paudel, Tura R.; Tsymbal, E. Y.; Li, C. J.; Lv, W. M.; Venkatesan, T.; Ariando, Ariando; Hilgenkamp, H.

    2014-03-01

    The interplay between exchange interactions, interfacial charges, and confinement effects controls the electronic, magnetic, and transport properties of complex oxide thin films. Here we report the emergence of ferromagnetism in insulating LaMnO3 thin films grown on SrTiO3 substrates beyond a critical thickness. LaMnO3 (001) films are deposited by a pulsed laser deposition technique with thicknesses varying from 1 unit cell to 24 unit cells. The position dependent local magnetization is then mapped with micrometer resolution using scanning superconducting quantum interference device microscopy. We find that the magnetic ground state switches from non-ferromagnetic to ferromagnetic within a change of one unit cell above the critical thickness of 5 unit cells with characteristic domain size of about 20 μm. Further increase of film thickness up to 24 unit cells leads to reduction of the domain size to about 10 μm. The critical thickness is qualitatively explained in terms of the charge transfer in polar LaMnO3 (001) thin films based on results of additional experimental data, density-functional calculations, and the electrostatic modeling.

  8. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  9. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  10. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  11. Metastable bcc phase formation in 3d ferromagnetic transition metal thin films sputter-deposited on GaAs(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Minakawa, Shigeyuki, E-mail: s-minakawa@futamoto.elect.chuo-u.ac.jp; Ohtake, Mitsuru; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan); Kirino, Fumiyoshi [Graduate School of Fine Arts, Tokyo University of the Arts, Taito-ku, Tokyo 110-8714 (Japan); Inaba, Nobuyuki [Faculty of Engineering, Yamagata University, Yonezawa, Yamagata 992-8510 (Japan)

    2015-05-07

    Co{sub 100−x}Fe{sub x} and Ni{sub 100−y}Fe{sub y} (at. %, x = 0–30, y = 0–60) films of 10 nm thickness are prepared on GaAs(100) substrates at room temperature by using a radio-frequency magnetron sputtering system. The detailed growth behavior is investigated by in-situ reflection high-energy electron diffraction. (100)-oriented Co and Ni single-crystals with metastable bcc structure are formed in the early stage of film growth, where the metastable structure is stabilized through hetero-epitaxial growth. With increasing the thickness up to 2 nm, the Co and the Ni films start to transform into more stable hcp and fcc structures through atomic displacements parallel to bcc(110) slide planes, respectively. The stability of bcc phase is improved by adding a small volume of Fe atoms into a Co film. The critical thickness of bcc phase formation is thicker than 10 nm for Co{sub 100−x}Fe{sub x} films with x ≥ 10. On the contrary, the stability of bcc phase for Ni-Fe system is less than that for Co-Fe system. The critical thicknesses for Ni{sub 100−y}Fe{sub y} films with y = 20, 40, and 60 are 1, 3, and 5 nm, respectively. The Co{sub 100−x}Fe{sub x} single-crystal films with metastable bcc structure formed on GaAs(100) substrates show in-plane uniaxial magnetic anisotropies with the easy direction along GaAs[011], similar to the case of Fe film epitaxially grown on GaAs(100) substrate. A Co{sub 100−x}Fe{sub x} film with higher Fe content shows a higher saturation magnetization and a lower coercivity.

  12. Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects

    Energy Technology Data Exchange (ETDEWEB)

    Simimol, A. [Nanomaterials Research Lab, Surface Engineering Division, CSIR-National Aerospace Laboratories, Post Bag No. 1779, Bangalore 560017 (India); Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Anappara, Aji A. [Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Greulich-Weber, S. [Department of Physics, Nanophotonic Materials, Faculty of Science, University of Paderborn, 33095 Paderborn (Germany); Chowdhury, Prasanta [Nanomaterials Research Lab, Surface Engineering Division, CSIR-National Aerospace Laboratories, Post Bag No. 1779, Bangalore 560017 (India); Barshilia, Harish C., E-mail: harish@nal.res.in

    2015-06-07

    We report the growth of un-doped and cobalt doped ZnO nanostructures fabricated on FTO coated glass substrates using electrodeposition method. A detailed study on the effects of dopant concentration on morphology, structural, optical, and magnetic properties of the ZnO nanostructures has been carried out systematically by varying the Co concentration (c.{sub Co}) from 0.01 to 1 mM. For c.{sub Co }≤ 0.2 mM, h-wurtzite phase with no secondary phases of Co were present in the ZnO nanostructures. For c.{sub Co} ≤ 0.2 mM, the photoluminescence spectra exhibited a decrease in the intensity of ultraviolet emission as well as band-gap narrowing with an increase in dopant concentration. All the doped samples displayed a broad emission in the visible range and its intensity increased with an increase in Co concentration. It was found that the defect centers such as oxygen vacancies and zinc interstitials were the source of the visible emission. The X-ray photoelectron spectroscopy studies revealed, Co was primarily in the divalent state, replacing the Zn ion inside the tetrahedral crystal site of ZnO without forming any cluster or secondary phases of Co. The un-doped ZnO nanorods exhibited diamagnetic behavior and it remained up to a c.{sub Co} of 0.05 mM, while for c.{sub Co }> 0.05 mM, the ZnO nanostructures exhibited ferromagnetic behavior at room temperature. The coercivity increased to 695 G for 0.2 mM Co-doped sample and then it decreased for c.{sub Co }> 0.2 mM. Our results illustrate that up to a threshold concentration of 0.2 mM, the strong ferromagnetism is due to the oxygen vacancy defects centers, which exist in the Co-doped ZnO nanostructures. The origin of strong ferromagnetism at room temperature in Co-doped ZnO nanostructures is attributed to the s-d exchange interaction between the localized spin moments resulting from the oxygen vacancies and d electrons of Co{sup 2+} ions. Our findings provide a new insight for tuning the

  13. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  14. Multiferroic oxide thin films and heterostructures

    Science.gov (United States)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  15. Multiferroic oxide thin films and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Chengliang, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Hu, Weijin; Wu, Tom, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tian, Yufeng [School of Physics, Shandong University, Jinan 250100 (China)

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  16. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  17. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  18. Coexistence of Weak Ferromagnetism and Polar Lattice Distortion in Epitaxial NiTiO3 thin films of the LiNbO3-Type Structure

    Energy Technology Data Exchange (ETDEWEB)

    Varga, Tamas [Environmental Molecular Sciences Lab., Richland, WA (United States); Droubay, Timothy C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Bowden, Mark E. [Environmental Molecular Sciences Lab., Richland, WA (United States); Colby, Robert J. [Environmental Molecular Sciences Lab., Richland, WA (United States); Manandhar, Sandeep [Environmental Molecular Sciences Lab., Richland, WA (United States); Shutthanandan, Vaithiyalingam [Environmental Molecular Sciences Lab., Richland, WA (United States); Hu, Dehong [Environmental Molecular Sciences Lab., Richland, WA (United States); Kabius, Bernd C. [Environmental Molecular Sciences Lab., Richland, WA (United States); Apra, Edoardo [Environmental Molecular Sciences Lab., Richland, WA (United States); Shelton, William A. [Environmental Molecular Sciences Lab., Richland, WA (United States); Chambers, Scott A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2013-04-15

    We report the magnetic and structural characteristics of epitaxial NiTiO3 films grown by pulsed laser deposition that are isostructural with acentric LiNbO3 (space group R3c). Optical second harmonic generation and magnetometry demonstrate lattice polarization at room temperature and weak ferromagnetism below 250 K, respectively. These results appear to be consistent with earlier predictions from first-principles calculations of the coexistence of ferroelectricity and weak ferromagnetism in a series of transition metal titanates crystallizing in the LiNbO3 structure. This acentric form of NiTiO3 is believed to be one of the rare examples of ferroelectrics exhibiting weak ferromagnetism generated by a Dzyaloshinskii-Moriya interaction.

  19. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  20. Determination of magnetic properties of multilayer metallic thin films

    CERN Document Server

    Birlikseven, C

    2000-01-01

    and magnetization measurements were taken. In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the exper...

  1. Observation of the stray field of thin film magnetic tips using electron holography

    NARCIS (Netherlands)

    Lunedei, E.; Matteucci, G.; Frost, B.G.; Greve, J.

    1996-01-01

    The stray field around thin film ferromagnetic tips employed for magnetic force microscopy has been revealed using electron holography. The experimental phase difference maps are in good agreement with simulations. Quantitative flux measurements of the leakage field are obtained.

  2. First Thin Film Festival

    Science.gov (United States)

    Samson, Philippe

    2005-05-01

    The constant evolution of the satellite market is asking for better technical performances and reliability for a reduced cost. Solar array is in front line of this challenge. This can be achieved by present technologies progressive improvement in cost reduction or by technological breakthrough. To reach an effective End Of Live performance100 W/kg of solar array is not so easy, even if you suppose that the mass of everything is nothing! Thin film cells are potential candidate to contribute to this challenge with certain confidence level and consequent development plan validation and qualification on ground and flight. Based on a strong flight heritage in flexible Solar Array design, the work has allowed in these last years, to pave the way on road map of thin film technologies . This is encouraged by ESA on many technological contracts put in concurrent engineering. CISG was selected cell and their strategy of design, contributions and results will be presented. Trade-off results and Design to Cost solutions will discussed. Main technical drivers, system design constraints, market access, key technologies needed will be detailed in this paper and the resulting road-map and development plan will be presented.

  3. The behaviour of physical quantities in thin films near the Curie point

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1982-05-01

    The Valenta model of a thin ferromagnetic film in the critical region above the Curie point has been considered. Spatial and temperature dependence for spin correlation time and magnetic susceptibility has been obtained and discussed. The results have been generalized and expressions describing the behaviour of any physical quantity in more complicated models of a thin ferromagnetic film near the Curie temperature have been given.

  4. Thin Film Inorganic Electrochemical Systems.

    Science.gov (United States)

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  5. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  6. Spin-Orbit Effects in Spin-Resolved L2,3 Core Level Photoemission of 3d Ferromagnetic Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Komesu, T; Waddill, G D; Yu, S W; Butterfield, M; Tobin, J G

    2007-10-02

    We present spin-resolved 2p core level photoemission for the 3d transition metal films of Fe and Co grown on Cu(100). We observe clear spin asymmetry in the main 2p core level photoemission peaks of Fe and Co films consistent with trends in the bulk magnetic moments. The spin polarization can be strongly enhanced, by variation of the experimental geometry, when the photoemission is undertaken with circularly polarized light, indicating that spin-orbit interaction can have a profound in spin polarized photoemission. Further spin polarized photoemission studies using variable circularly polarized light at high photon energies, high flux are indicated, underscoring the value of synchrotron measurements at facilities with increased beam stability.

  7. Ferromagnetic behaviour of Fe-doped ZnO nanograined films

    Directory of Open Access Journals (Sweden)

    Boris B. Straumal

    2013-06-01

    Full Text Available The influence of the grain boundary (GB specific area sGB on the appearance of ferromagnetism in Fe-doped ZnO has been analysed. A review of numerous research contributions from the literature on the origin of the ferromagnetic behaviour of Fe-doped ZnO is given. An empirical correlation has been found that the value of the specific grain boundary area sGB is the main factor controlling such behaviour. The Fe-doped ZnO becomes ferromagnetic only if it contains enough GBs, i.e., if sGB is higher than a certain threshold value sth = 5 × 104 m2/m3. It corresponds to the effective grain size of about 40 μm assuming a full, dense material and equiaxial grains. Magnetic properties of ZnO dense nanograined thin films doped with iron (0 to 40 atom % have been investigated. The films were deposited by using the wet chemistry “liquid ceramics” method. The samples demonstrate ferromagnetic behaviour with Js up to 0.10 emu/g (0.025 μB/f.u.ZnO and coercivity Hc ≈ 0.03 T. Saturation magnetisation depends nonmonotonically on the Fe concentration. The dependence on Fe content can be explained by the changes in the structure and contiguity of a ferromagnetic “grain boundary foam” responsible for the magnetic properties of pure and doped ZnO.

  8. Ferromagnetic behaviour of Fe-doped ZnO nanograined films.

    Science.gov (United States)

    Straumal, Boris B; Protasova, Svetlana G; Mazilkin, Andrei A; Tietze, Thomas; Goering, Eberhard; Schütz, Gisela; Straumal, Petr B; Baretzky, Brigitte

    2013-01-01

    The influence of the grain boundary (GB) specific area s GB on the appearance of ferromagnetism in Fe-doped ZnO has been analysed. A review of numerous research contributions from the literature on the origin of the ferromagnetic behaviour of Fe-doped ZnO is given. An empirical correlation has been found that the value of the specific grain boundary area s GB is the main factor controlling such behaviour. The Fe-doped ZnO becomes ferromagnetic only if it contains enough GBs, i.e., if s GB is higher than a certain threshold value s th = 5 × 10(4) m(2)/m(3). It corresponds to the effective grain size of about 40 μm assuming a full, dense material and equiaxial grains. Magnetic properties of ZnO dense nanograined thin films doped with iron (0 to 40 atom %) have been investigated. The films were deposited by using the wet chemistry "liquid ceramics" method. The samples demonstrate ferromagnetic behaviour with J s up to 0.10 emu/g (0.025 μB/f.u.ZnO) and coercivity H c ≈ 0.03 T. Saturation magnetisation depends nonmonotonically on the Fe concentration. The dependence on Fe content can be explained by the changes in the structure and contiguity of a ferromagnetic "grain boundary foam" responsible for the magnetic properties of pure and doped ZnO.

  9. Spinodal dewetting of thin films

    Science.gov (United States)

    Jaiswal, Prabhat K.; Puri, S.

    2009-01-01

    Stable thin liquid films are of various scientific and technological applications, e.g., in optical coating, painting technologies, coating thin wires and fibers, lubricants, adhesives, etc. However, the instabilities in a thin film may lead to rupture, hole formation, and other morphological changes which amplify the nonuniformity in the thin film [1]. This morphological evolution in an unstable thin film is generally known as `dewetting' [2]. There have recently been a number of theoretical and experimental studies on dewetting in thin films [3-6]. The process of `spinodal dewetting' comes into the category of a general class of phenomena, spinodal decomposition [7]. The pattern formation taking place during dewetting can also be of great importance in nanotechnology, e.g., for preparing quantum dots [8], nanorings [9], etc. We numerically solve the nonlinear two-dimensional thin film equation [2] for a thin liquid film subjected to the long range van der Waals attraction and short range Born repulsion. The simulation results for the temporal evolution of domains and height profile along diagonal direction of the lattice show the `hills and valleys' short of structures which is the typical morphology obtained during the spinodal dewetting [10]. We obtain the dynamical correlation function and structure factor showing the existence of a characteristic length scale in the system at late time. We give the scaling arguments for the length scale of the drops to be proportional to t1/3 which is in agreement with our numerical results for the domain growth.

  10. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  11. Study of the leakage field of magnetic force microscopy thin-film tips using electron holography

    NARCIS (Netherlands)

    Frost, B.G.; Hulst, van N.F.; Lunedei, E.; Matteucci, G.; Rikkers, E.

    1996-01-01

    Electron holography is applied for the study of the leakage field of thin-film ferromagnetic tips used as probes in magnetic force microscopy. We used commercially available pyramidal tips covered o­n o­ne face with a thin NiCo film, which were then placed in a high external magnetic field directed

  12. The spin-wave spectrum of layered magnetic thin films

    Science.gov (United States)

    van Stapele, R. P.; Greidanus, F. J. A. M.; Smits, J. W.

    1985-02-01

    The ferromagnetic resonance spectrum of a layered magnetic thin film is expected to show a number of standing spin-wave resonances with a wavelength that matches the thickness of the film. For the case of perpendicular resonance such spectra were calculated for some typical films in which magnetic layers are alternated with weaker magnetic layers. Some useful approximations are discussed. The results of the calculations are compared with experimental perpendicular spectra measured on films in which fifty Permalloy layers alternate with Ni layers.

  13. Dynamic Characterization of Thin Film Magnetic Materials

    Science.gov (United States)

    Gu, Wei

    A broadband dynamic method for characterizing thin film magnetic material is presented. The method is designed to extract the permeability and linewidth of thin magnetic films from measuring the reflection coefficient (S11) of a house-made and short-circuited strip line testing fixture with or without samples loaded. An adaptive de-embedding method is applied to remove the parasitic noise of the housing. The measurements were carried out with frequency up to 10GHz and biasing magnetic fields up to 600 Gauss. Particular measurement setup and 3-step experimental procedures are described in detail. The complex permeability of a 330nm thick continuous FeGaB, 435nm thick laminated FeGaB film and a 100nm thick NiFe film will be induced dynamically in frequency-biasing magnetic field spectra and compared with a theoretical model based on Landau-Lifshitz-Gilbert (LLG) equations and eddy current theories. The ferromagnetic resonance (FMR) phenomenon can be observed among these three magnetic materials investigated in this thesis.

  14. Damping and ferromagnetic resonance linewidth broadening in nanocrystalline soft ferromagnetic Fe-Co-Hf-N films

    Energy Technology Data Exchange (ETDEWEB)

    Seemann, K. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material-forschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)], E-mail: klaus.seemann@imf.fzk.de; Leiste, H. [Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, Institut fuer Material-forschung I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Kovacs, A. [Institute of Scientific and Industrial Research, 8-1 Mihogaoka, Ibaraki, Osaka 5670047 (Japan)

    2008-07-15

    In order to describe high-frequency damping mechanisms of ferromagnetic films by means of the imaginary part of the frequency-dependant permeability, CMOS compatible ferromagnetic Fe{sub 36}Co{sub 44}Hf{sub 9}N{sub 11} films were deposited by reactive r.f. magnetron sputtering on oxidised 5x5 mm{sup 2}x380 {mu}m (1 0 0)-silicon substrates with a 6-in. Fe{sub 38}Co{sub 47}Hf{sub 15} target, as well as magnetic field annealing between 300 and 600 deg. C. An in-plane uniaxial anisotropy of around 4.5 mT as well as an excellent soft magnetic behaviour with a saturation polarisation of approximately 1.4 T could be observed after heat treatment at the above-mentioned temperatures, which drives these films to a high-frequency suitability. Ferromagnetic resonance frequencies of approximately up to 2.4 GHz could be obtained. The frequency-dependant permeability was measured with a broadband permeameter. Depending on the heat treatment, an increase of the full-width at half-maximum (FWHM) of the imaginary part of the frequency-dependant permeability is discussed in terms of two-magnon scattering, anisotropy-type competition and local resonance generation through predominant grain growth causing magnetisation and anisotropy inhomogeneities in the magnetic films. The grain size of the films was determined by (HRTEM) imaging and amounts from a few nanometres for films heat treated at 300 deg. C to more than 10 nm at 600 deg. C where the FWHM {delta}f{sub eff} and the Landau-Lifschitz-Gilbert equation damping parameter {alpha}{sub eff} increases with d{sub nm}{sup 2} and d{sub nm} (e.g. d{sub nm} is the grain diameter of the nonmagnetic Hf-N phase), respectively.

  15. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  16. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  17. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  18. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  19. Room temperature ferromagnetism down to 10 nanometer Ni–Fe–Mo alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, Mitali, E-mail: akm@bose.res.in [Department of Materials Science, S.N. Bose National Centre for Basic Sciences, JD Block, Sector III, Salt Lake City, Kolkata 700098 (India); Majumdar, A.K. [Department of Materials Science, S.N. Bose National Centre for Basic Sciences, JD Block, Sector III, Salt Lake City, Kolkata 700098 (India); Ramakrishna Mission Vivekananda University, PO Belur Math, Howrah 711202 (India); Rai, S.; Tiwari, Pragya; Lodha, G.S. [Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Banerjee, A. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452017 (India); Nair, K.G.M [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu 603102 (India); Sarkar, Jayanta [Low Temperature Laboratory, Aalto University, P.O. Box 15100, FI-00076 AALTO (Finland); Choudhary, R.J.; Phase, D.M. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452017 (India)

    2013-10-31

    Magnetic behavior of a few pulsed laser deposited soft ferromagnetic thin films of Ni–Fe–Mo alloys of different thickness on sapphire single crystals is interpreted on the basis of their structural characteristics. Highly textured thin films have high void density due to island-like growth. X-ray reflectivity (XRR) of the thin films indicate that instead of a uniform density there are effectively three layers with density gradient across the thickness, which is further supported by atomic force microscopy and cross-sectional scanning electron microscopy. Rutherford backscattering spectroscopy and energy dispersive spectrum measurements reveal that the composition in the films is not too far from that of the bulk target with a trend of enhanced Fe yield in the films. The structural disorder strongly affected the magnetic property of the films resulting in much higher values of the Curie temperature T{sub C} and coercive field H{sub C} than those of the bulk targets. Bifurcations of low-field zero-field-cooled and field-cooled magnetization reflect the disorder-induced anisotropy in the thin films. The spin wave stiffness constants D are higher than their bulk counterparts which are supportive of the enhanced Fe yield in the films. The saturation magnetization, M calculated from measurements in field transverse to the films strongly supports the thickness found from XRR. Finally, even the 10 nm thin films have sizable M and H{sub C} and T{sub C} > 300 K, making them good candidates for magnetic applications. Overall, the magnetic behavior and the structural characteristics have reasonably complemented each other. - Highlights: • Correlated structural and magnetic properties of pulsed laser grown Ni–Fe–Mo filmsFilm thickness from scanning microscopy agrees with X-ray reflectivity analysis. • Experiments reveal that targets and the films have somewhat similar compositions. • Low-field M(T) shows spin-glass-like features in all films in contrast to

  20. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  1. Periodic instantons and domain structure in a ferromagnetic film

    Science.gov (United States)

    Zheng, G.-P.; Liang, J.-Q.; Nie, Y.-H.; Yin, W.

    2003-11-01

    We in this paper study periodic instantons and domain structures in a theoretical film consisting of biaxial-anisotropic ferromagnets. In a proper approximation the equation of motion of the magnetization vector as a space-time function in the film is reduced to the 1 + 2-dimensional sine-Gordon field equation in strong anisotropy limit. Static periodic instantons, which are solutions of Euclidean field equantion, and various new domain structures are obtained analytically. We also investigate the energy density and stability of the periodic instantons.

  2. Thin-film metal hydrides.

    Science.gov (United States)

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  3. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI Hongji; HONG Ruijin; HE Hongbo; SHAO Jianda; FAN Zhengxiu

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  4. Drying of thin colloidal films

    Science.gov (United States)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  5. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  6. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  7. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  8. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; Kuznetsov, V. I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  9. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; V. I. Kuznetsov

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  10. Dielectric Spectroscopy of Localized Electrical Charges in Ferrite Thin Film

    Science.gov (United States)

    Abdellatif, M. H.; Azab, A. A.; Moustafa, A. M.

    2017-09-01

    A thin film of Gd-doped Mn-Cr ferrite has been prepared by pulsed laser deposition from a bulk sample of the same ferrite prepared by the conventional double sintering ceramic technique. The charge localization and surface conduction in the ferromagnetic thin film were studied. The relaxation of the dielectric dipoles after exposure to an external alternating-current (AC) electric field was investigated. The effect of charge localization on the real and imaginary parts of the dielectric modulus was studied. The charge localization in the thin film was enhanced and thereby the Maxwell-Wagner-type interfacial polarization. The increase in interfacial polarization is a direct result of the enhanced charge localization. The sample was characterized in terms of its AC and direct-current (DC) electrical conductivity, and thermally stimulated discharge current.

  11. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  12. Thin Film Research. Volume 1

    Science.gov (United States)

    1985-05-30

    1928), and later by Coper, Frommer and Zocher (1931), followed. From that time, when thin film technology was in its early stages of evolution, we...personal communication (1983). Cau, Marcel, Comtes Rendues 186, 1293 (1928). Coper, H. K., Frommer , L., and Zocher, H., Ztschr. Elektrochem. 37, 571

  13. Ferroelectric Thin Film Development

    Science.gov (United States)

    2003-12-10

    less. The film temper- ature is monitored by thermocouple sensors. Process gases pass through the chamber during the process. An advantage of RTP is the...semiconductor InSe ,” J. Appl. Phys., vol. 86, pp. 5687–5691, November 1999. 37. R. Mollers and R. Memming Ber. Bunsenges. Phys. Chem., vol. 76, 1972. 38. M

  14. Dimensionality crossover in critical behaviour of ultrathin ferromagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Prudnikov, Pavel V., E-mail: prudnikp@univer.omsk.su; Prudnikov, Vladimir V.; Menshikova, Maria A.; Piskunova, Natalia I.

    2015-08-01

    We propose the model which takes account of magnetocrystalline anisotropy effects in thin magnetic films. The dimensionality crossover from two-dimensional monolayer to three-dimensional system in multilayer magnetic films is studied using a Monte Carlo technique. Finite-size scaling is applied for the determination of the critical characteristics as a function of film thickness. The transition to intermediate planar phase is discussed. - Highlights: • We make Monte Carlo simulations in a anisotropy Heisenberg films. • Anisotropy effects lead to dimensionality crossover in Heisenberg films. • The transition to intermediate XY-like phase for 14–19 ML was discovered. • The critical exponents agree with experiments for Ni and Co films.

  15. Magnetic properties of a long, thin-walled ferromagnetic nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Chen, E-mail: chen.sun@physics.tamu.edu [Department of Physics and Astronomy, Texas A and M University, College Station, TX 77843-4242 (United States); Pokrovsky, Valery L. [Department of Physics and Astronomy, Texas A and M University, College Station, TX 77843-4242 (United States); Landau Institute for Theoretical Physics, Chernogolovka, Moscow District, 142432 (Russian Federation)

    2014-04-15

    We consider magnetic properties of a long, thin-walled ferromagnetic nanotube. We assume that the tube consists of isotropic homogeneous magnet whose spins interact via the exchange energy, the dipole–dipole interaction energy, and also interact with an external field via Zeeman energy. Possible stable states are the parallel state with the magnetization along the axis of the tube, and the vortex state with the magnetization along azimuthal direction. For a given material, which of them has lower energy depends on the value γ=R{sup 2}d/(Lλ{sub x}{sup 2}), where R is the radius of the tube, d is its thickness, L is its length and λ{sub x} is an intrinsic scale of length characterizing the ratio of exchange and dipolar interaction. At γ<1, the parallel state wins, otherwise the vortex state is stable. A domain wall in the middle of the tube is always energy unfavorable, but it can exist as a metastable structure. Near the ends of a tube magnetized parallel to the axis a half-domain structure transforming gradually the parallel magnetization to a vortex just at the edge of the tube is energy favorable. We also consider the equilibrium magnetization textures in an external magnetic field either parallel or perpendicular to the tube. Finally, magnetic field produced by a nanotube and an array of tubes is analyzed. - Highlights: • We obtain a simple criterion for stable state of a long, thin-walled magnetic tube. • A domain wall in the middle is always energy unfavorable, but can be metastable. • In external field different states show different hystereses. • Field produced by a tube and an array of tubes is calculated.

  16. Thin-Film Metamaterials called Sculptured Thin Films

    CERN Document Server

    Lakhtakia, Akhlesh

    2010-01-01

    Morphology and performance are conjointed attributes of metamaterials, of which sculptured thin films (STFs) are examples. STFs are assemblies of nanowires that can be fabricated from many different materials, typically via physical vapor deposition onto rotating substrates. The curvilinear--nanowire morphology of STFs is determined by the substrate motions during fabrication. The optical properties, especially, can be tailored by varying the morphology of STFs. In many cases prototype devices have been fabricated for various optical, thermal, chemical, and biological applications.

  17. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  18. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  19. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  20. Magneto-optical and magnetic properties in a Co/Pd multilayered thin film

    Science.gov (United States)

    Nwokoye, Chidubem A.; Bennett, Lawrence H.; Della Torre, Edward; Ghahremani, Mohammadreza; Narducci, Frank A.

    2017-01-01

    The paper describes investigation of ferromagnetism at low temperatures. We explored the magneto-optical properties, influenced by photon-magnon interactions, of a ferromagnetic Co/Pd multilayered thin film below and above the magnon Bose-Einstein Condensation (BEC) temperature. Analyses of SQUID and MOKE low temperature experimental results reveal a noticeable phase transition in both magnetic and magneto-optical properties of the material at the BEC temperature.

  1. Ferromagnetism in vanadium-doped Bi2Se3 topological insulator films

    Science.gov (United States)

    Zhang, Liguo; Zhao, Dapeng; Zang, Yunyi; Yuan, Yonghao; Jiang, Gaoyuan; Liao, Menghan; Zhang, Ding; He, Ke; Ma, Xucun; Xue, Qikun

    2017-07-01

    With molecular beam epitaxy, we grew uniformly vanadium-doped Bi2Se3 films which exhibit ferromagnetism with perpendicular magnetic anisotropy. A systematic study on the magneto-transport properties of the films revealed the crucial role of topological surface states in ferromagnetic coupling. The enhanced ferromagnetism with reduced carrier density can support quantum anomalous Hall phase in the films, though the anomalous Hall resistance is far from quantization due to high carrier density. The topological surface states of films exhibit a gap of ˜180 meV which is unlikely to be magnetically induced but may significantly influence the quantum anomalous Hall effect in the system.

  2. Microwave Magnetic Properties of Laminates with Thin FeCoBSi Films

    Institute of Scientific and Technical Information of China (English)

    LU Haipeng; JIANG Yongjun; YANG Jing; DENG Longjiang

    2011-01-01

    The microwave permeability of laminated composites based on thin FeCoBSi films was unoer study.The level of permeability increased with increasing of the ferromagnetic inclusions in the laminates.The intrinsic permeability spectra of ferromagnetic inclusion are parametrically reconstructed.The obtained parameters of magnetic resonance were specially analyzed.To avoid the effect of eddy current and to obtain large-volume fractions of ferromagnetic constituent,laminates consisting of alternating FeCoBSi/SiO2 multilayers and mylar substrates were also investigated.For the same volume fractions of ferromagnetic constituent (8.7%),laminates based on multi-layered films are found to possess higher values of permeability than those based on one-layered films.

  3. Photoconductivity of thin organic films

    Science.gov (United States)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  4. Photoconductivity of thin organic films

    Energy Technology Data Exchange (ETDEWEB)

    Tkachenko, Nikolai V. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Chukharev, Vladimir, E-mail: Vladimir.Chukharev@tut.fi [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Kaplas, Petra; Tolkki, Antti; Efimov, Alexander [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland); Lemmetyinen, Helge [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland)

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 {mu}m), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C{sub 60}), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C{sub 60} and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10{sup 3} {Omega} m and 3 x 10{sup 4} {Omega} m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10{sup 8} {Omega} m in dark to 3.1 x 10{sup 6} {Omega} m under the light.

  5. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  6. Engineering helimagnetism in MnSi thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, S. L.; Hesjedal, T., E-mail: Thorsten.Hesjedal@physics.ox.ac.uk [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Chalasani, R.; Kohn, A. [Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv 6997801, Tel Aviv (Israel); Baker, A. A. [Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom); Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom); Steinke, N.-J. [ISIS, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0QX (United Kingdom); Figueroa, A. I.; Laan, G. van der [Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom)

    2016-01-15

    Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

  7. Engineering helimagnetism in MnSi thin films

    Directory of Open Access Journals (Sweden)

    S. L. Zhang

    2016-01-01

    Full Text Available Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

  8. Selective epitaxial growth for YBCO thin films

    NARCIS (Netherlands)

    Damen, C.A.J.; Smilde, H.-J.H.; Blank, D.H.A.; Rogalla, H.

    1998-01-01

    A novel selective epitaxial growth (SEG) technique for (YBCO) thin films is presented. The method involves the deposition of a thin (about 10 nm) metal layer, in the desired pattern, on a substrate before the deposition of the superconducting thin film. During growth the metal reacts with the YBCO,

  9. A laminate of ferromagnetic films with high effective permeability at high frequencies

    Directory of Open Access Journals (Sweden)

    I. T. Iakubov

    2014-10-01

    Full Text Available The paper reports on development of magnetodielectric material with high microwave permeability. The material is a laminate of multi-layer permalloy films deposited onto a thin mylar substrate by magnetron sputtering. The deposited films are arranged into a stack and glued together under pressure to obtain the laminate. With the content of ferromagnetic component in the laminate being 22 % vol., its measured quasistatic permeability is 60. The peak value of imaginary permeability attains 50 and the peak is located near 1 GHz. As compared with the multi-layer films, which the laminate is made of, it exhibits lower magnetic loss tangent at frequencies below the magnetic loss peak and may therefore be useful for many technical applications. Lower low-frequency loss may be attributed to pressing of the glued sample. This rectifies wrinkling appearing due to sputtering of rigid multi-layer film onto flexible mylar substrate and, therefore, makes the magnetic structure of the film more uniform.

  10. Tunable flux pinning landscapes achieved by functional ferromagnetic Fe{sub 2}O{sub 3}:CeO{sub 2} vertically aligned nanocomposites in YBa{sub 2}Cu{sub 3}O{sub 7−δ} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Chen-Fong; Huang, Jijie; Lee, Joon-Hwan [Material Science and Engineering Program, Texas A& M University, College Station, TX 77843-3128 (United States); Khatkhatay, Fauzia [Department of Electrical and Computer Engineering, Texas A& M University, College Station, TX 77843-3128 (United States); Chen, Li [Material Science and Engineering Program, Texas A& M University, College Station, TX 77843-3128 (United States); Chen, Aiping [Department of Electrical and Computer Engineering, Texas A& M University, College Station, TX 77843-3128 (United States); Su, Qing [Material Science and Engineering Program, Texas A& M University, College Station, TX 77843-3128 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Material Science and Engineering Program, Texas A& M University, College Station, TX 77843-3128 (United States); Department of Electrical and Computer Engineering, Texas A& M University, College Station, TX 77843-3128 (United States)

    2015-03-15

    Highlights: • Functional ferromagnetic (Fe{sub 2}O{sub 3}){sub x}:(CeO{sub 2}){sub 1−x} vertically aligned nanocomposites (VAN). • An ordered arrangement of ferromagnetic Fe{sub 2}O{sub 3} nanoinclusions. • Significant in-field improvement of J{sub c} (H//c) in both VAN nanolayer capped and buffered samples. • T{sub c} above 90 K and the J{sub c}{sup sf} maximized at 3.07 MA/cm{sup 2} (75 K) and 9.2 MA/cm{sup 2} (65 K) for 30% Fe{sub 2}O{sub 3} sample. - Abstract: Functional ferromagnetic (Fe{sub 2}O{sub 3}){sub x}:(CeO{sub 2}){sub 1−x} vertically aligned nanocomposite (VAN) layers were deposited as either buffer or cap layers for YBa{sub 2}Cu{sub 3}O{sub 7−δ} (YBCO) thin films. The composition of Fe{sub 2}O{sub 3} dopants in the VAN nanolayers is controlled at 10%, 30% and 50% in order to create different arrangements of Fe{sub 2}O{sub 3} and CeO{sub 2} nanopillars and therefore to tune the flux pining landscapes. The composition variation provides tunable and ordered arrangements of magnetic nanodopants and interfacial defects as pinning centers in the YBCO thin films. The superconducting property measurements show that most doped samples obtain a T{sub c} above 90 K and the J{sub c}{sup sf} measured at 75 K and 65 K maximized at 3.07 MA/cm{sup 2} and 9.2 MA/cm{sup 2} for 30% Fe{sub 2}O{sub 3} VAN doped sample. As the temperature decreased to 5 K, the sample with 50% Fe{sub 2}O{sub 3} VAN doped sample show the best pinning effect due to pronounced magnetic pinning effects. This work demonstrates the tunable density of magnetic pinning centers can be achieved by VAN to meet the specific pinning requirement.

  11. Effective thermal boundary resistance from thermal decoupling of magnons and phonons in SrRuO3 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Langner, M.C.; Kantner, C.L.S.; Chu, Y.H.; Martin, L.M.; Yu, P.; Ramesh, R.; Orenstein, J.

    2010-01-20

    We use the time-resolved magneto-optical Kerr effect (TRMOKE) to measure the local temperature and heat flow dynamics in ferromagnetic SrRuO3 thin films. After heating by a pump pulse, the film temperature decays exponentially, indicating that the heat flow out of the film is limited by the film/substrate interface. We show that this behavior is consistent with an effective boundary resistance resulting from disequilibrium between the spin and phonon temperatures in the film.

  12. Long-range ferromagnetic order in LaCoO3 -δ epitaxial films due to the interplay of epitaxial strain and oxygen vacancy ordering

    Science.gov (United States)

    Mehta, V. V.; Biskup, N.; Jenkins, C.; Arenholz, E.; Varela, M.; Suzuki, Y.

    2015-04-01

    We demonstrate that a combination of electronic structure modification and oxygen vacancy ordering can stabilize a long-range ferromagnetic ground state in epitaxial LaCoO3 thin films. Highest saturation magnetization values are found in the thin films in tension on SrTiO3 and (La ,Sr )(Al ,Ta )O3 substrates and the lowest values are found in thin films in compression on LaAlO3. Electron microscopy reveals oxygen vacancy ordering to varying degrees in all samples, although samples with the highest magnetization are the most defective. Element-specific x-ray absorption techniques reveal the presence of high spin Co2 + and Co3 + as well as low spin Co3 + in different proportions depending on the strain state. The interactions among the high spin Co ions and the oxygen vacancy superstructure are correlated with the stabilization of the long-range ferromagnetic order.

  13. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  14. Effects of doping concentration on properties of Mn-doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    Gao Li; Zhang Jian-Min

    2009-01-01

    This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500 ℃. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn_(2p3/2) increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mn-doped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4 wt. % and 10 wt. % Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20 wt. % Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.

  15. Thin film fuel cell electrodes.

    Science.gov (United States)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  16. Asymptotic behavior of local dipolar fields in thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bowden, G.J., E-mail: gjb@phys.soton.ac.uk [School of Physics and Astronomy, University of Southampton, SO17 1BJ (United Kingdom); Stenning, G.B.G., E-mail: Gerrit.vanderlaan@diamond.ac.uk [Magnetic Spectroscopy Group, Diamond Light Source, Didcot OX11 0DE (United Kingdom); Laan, G. van der, E-mail: gavin.stenning@stfc.ac.uk [ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Didcot OX11 0QX (United Kingdom)

    2016-10-15

    A simple method, based on layer by layer direct summation, is used to determine the local dipolar fields in uniformly magnetized thin films. The results show that the dipolar constants converge ~1/m where the number of spins in a square film is given by (2m+1){sup 2}. Dipolar field results for sc, bcc, fcc, and hexagonal lattices are presented and discussed. The results can be used to calculate local dipolar fields in films with either ferromagnetic, antiferromagnetic, spiral, exponential decay behavior, provided the magnetic order only changes normal to the film. Differences between the atomistic (local fields) and macroscopic fields (Maxwellian) are also examined. For the latter, the macro B-field inside the film is uniform and falls to zero sharply outside, in accord with Maxwell boundary conditions. In contrast, the local field for the atomistic point dipole model is highly non-linear inside and falls to zero at about three lattice spacing outside the film. Finally, it is argued that the continuum field B (used by the micromagnetic community) and the local field B{sub loc}(r) (used by the FMR community) will lead to differing values for the overall demagnetization energy. - Highlights: • Point-dipolar fields in uniformly magnetized thin films are characterized by just three numbers. • Maxwell's boundary condition is partially violated in the point-dipole approximation. • Asymptotic values of point dipolar fields in circular monolayers scale as π/r.

  17. Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Mal, Siddhartha; Nori, Sudhakar; Narayan, J. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Mula, Suhrit [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769008 (India); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2012-12-01

    We have introduced defects in ZnO (undoped and doped with Co and Mn) epitaxial thin films using laser irradiation from nanosecond laser pulses and thermal annealing in oxygen ambient. In contrast to the as grown samples, the laser irradiated films show a significant increase in conductivity, enhancement in UV emission, while maintaining the same wurtzite crystal structure. Room-temperature ferromagnetism (RTFM) is observed in laser-irradiated samples, which increased with the number of laser pulses up to a certain value where magnetic moment saturates. The induced ferromagnetism as well as the enhanced electrical conductivity can be reversed with thermal annealing in oxygen ambient. The magnetization in Co and Mn doped films was found to be strong function of growth conditions and defect concentration. X-ray diffraction and optical absorption experiments suggested a 2+ valance state and tetrahedral coordination for both Co and Mn ions. There is a simultaneous increase in n-type electrical conductivity with the number of laser pulses and continue to exhibit semiconducting behavior in both undoped and doped films. The saturation magnetization was found to be 0.08 {mu}{sub B}/Co and 0.05 {mu}{sub B}/Mn, much lower than 3.0 {mu}{sub B}/Co and 5.0 {mu}{sub B}/Mn, indicating the prominent role of intrinsic defects in RTFM with some contribution from Co{sup 2+}-oxygen vacancy complexes. We propose a unified mechanism based upon introduction of intrinsic defects to explain RTFM and n-type conductivity enhancements during pulsed laser and thermal annealing.

  18. Exotic thin films made from cobalt ferrite

    NARCIS (Netherlands)

    Lisfi, A.; Lisfi, A.; Williams, C.M.; Johnson, A.; Chang, P.; Corcoran, H.; Nguyen, L.T.; Lodder, J.C.; Morgan, W.; Soohoo, R.F.

    2005-01-01

    Epitaxial CoFe2O4 thin films have been grown by PLD on (100) MgO substrate. Two types of spin-reorientation have been observed in such films upon annealing or increasing the film-thickness. In the as-deposited layers and at low thickness the easy axis is confined to the normal to the film plane

  19. Magneto-electric effect for multiferroic thin film by Monte Carlo simulation

    Science.gov (United States)

    Wang, Zidong; Grimson, Malcolm J.

    2015-06-01

    Magneto-electric (ME) effect in a multiferroic heterostructure film, i.e., a coupled ferromagnetic-ferroelectric thin film, has been investigated through the use of the Metropolis algorithm in Monte Carlo simulations. A classical Heisenberg model describes the energy stored in the ferromagnetic (FM) film, and we use a pseudo-spin model with a transverse Ising Hamiltonian to characterise the energy of electric dipoles in the ferroelectric (FE) film. The purpose of this article is to demonstrate the dynamic response of polarisation is driven by an external magnetic field, when there is a linear magneto-electric coupling at the interface between the ferromagnetic and ferroelectric components. Contribution to the topical issue "Advanced Electromagnetics Symposium (AES 2014) - Elected submissions", edited by Adel Razek

  20. Magnetic properties of electroplated nano/microgranular NiFe thin films for rf application

    NARCIS (Netherlands)

    Zhuang, Y.; Vroubel, M.; Rejaei, B.; Burghartz, J.N.; Attenborough, K.

    2005-01-01

    A granular NiFe thin film with large in-plane magnetic anisotropy and high ferromagnetic-resonance frequency developed for radio-frequency integrated circuit (IC) applications is presented. During the deposition, three-dimensional (3D) growth occurs, yielding NiFe grains (ϕ ∼ 1.0 μm). Nanonuclei (ϕ

  1. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  2. Synthesis and properties of Ag-doped ZnO films with room temperature ferromagnetism

    Science.gov (United States)

    Xu, Qin; Wang, Zhi-Jun; Chang, Ze-Jiang; Liu, Jing-Jin; Ren, Ya-Xuan; Sun, Hui-Yuan

    2016-12-01

    A series of Ag-doped ZnO films were prepared by DC magnetron sputtering. XRD and SEM results showed that the doping amount of Ag had a great influence on the films' morphology and ferromagnetism, and their magnetism can be improved by doping an appropriate amount of Ag. The theoretical analysis suggested that the magnetism resulted mainly from the film grain boundary surfaces. Further research revealed that these films had strong timeliness. Such a result indicated that the room temperature ferromagnetism of Ag-doped ZnO films did not stem from the cation vacancies but from the oxygen vacancies on the boundary surfaces.

  3. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  4. Transport critical-current density of superconducting films with hysteretic ferromagnetic dots

    Directory of Open Access Journals (Sweden)

    Nuria Del-Valle

    2012-06-01

    Full Text Available Superconductor-ferromagnet hybrids present a rich and complex phenomenology. Particularly, a hysteretic behavior on the transport critical-current density, as a function of a uniform perpendicular applied field, has been experimentally found in superconducting films with some embedded ferromagnets. Here we analyze the interaction superconductor-ferromagnets by means of an iterative model based on the critical-state model with field-dependent internal critical-current density and compare the results with actual transport measurements. By using arguments of field compensation, we show how the change in the magnetization of the ferromagnetic inclusions is responsible for the observed hysteresis on the transport critical current.

  5. Ferromagnetism and temperature-dependent electronic structure in metallic films

    CERN Document Server

    Herrmann, T

    1999-01-01

    reduced at the surface compared to the inner layers. This observation clearly contradicts the well-known Stoner picture of band magnetism and can be explained in terms of general arguments which are based on exact results in the limit of strong Coulomb interaction. The magnetic behavior of the Hubbard films can be analyzed in detail by inspecting the local quasi particle density of states as well as the wave vector dependent spectral density. The electronic structure is found to be strongly spin-, layer-, and temperature-dependent. The last part of this work is concerned about the temperature-driven reorientation transition in thin metallic films. For the description of the magnetic anisotropy in thin films the dipole interaction as well as the spin-orbit interaction have to be included in the model. By calculating the temperature-dependence of the magnetic anisotropy energy it is found that both types of temperature-driven reorientation transitions, from out-of-plane to in-plane (''Fe-type'') and from in-pla...

  6. Magnetization states in epitaxial thin films subjected to misfit strains and demagnetization field

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Junqing [Department of Applied Mathematics, School of Science, Zhejiang University of Technology, Hangzhou, Zhejiang 310014 (China); Wang, Jie, E-mail: jw@zju.edu.cn [Institute of Applied Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou, Zhejiang 310027 (China)

    2015-01-15

    The effect of non-equally biaxial in-plane misfit strains and demagnetization field on the magnetization states of ferromagnetic thin films is analytically investigated by using a nonlinear thermodynamic theory. The “misfit strain–misfit strain” phase diagrams of the magnetization states at room temperature for α-Fe and CoFe{sub 2}O{sub 4} thin films epitaxially grown on tetragonal substrates are developed by minimizing the total free energy. For a cubic ferromagnetic thin film, an out-of-plane magnetization state exists in the region of tensile misfit strains if the magnetostrictive coefficient of λ{sub 100} is negative and the demagnetization field is small, whereas the out-of-plane magnetization vanishes in the whole region of misfit strains when the demagnetization field is large.

  7. Epitaxial strain induced atomic ordering in stoichiometric LaCoO3 thin films

    Science.gov (United States)

    Choi, Woo Seok; Kwon, Ji-Hwan; Jeen, Hyoungjeen; Sawatzky, George A.; Hinkov, Vladimir; Kim, Miyoung; Lee, Ho Nyung

    2015-03-01

    Heteroepitaxial strain imposed in complex transition metal oxide thin films is recognized as an effective tool for identifying and controlling emergent physical phenomena. Stoichiometric LaCoO3 is particularly interesting, since the thin film form of the material exhibits a robust macroscopic ferromagnetic ordering, while the bulk form of the material is a zero spin, nonmagnetic insulator. In this work, we show that the ferromagnetic ordering observed in LaCoO3 thin films is related to a lattice modulation in the atomic scale, originating from the epitaxial strain. The possibility of oxygen vacancies have been carefully ruled out using various macroscopic and microscopic spectroscopic techniques, and an unconventional strain relaxation behavior identified by strip-like lattice modulation pattern was responsible for the non-zero spin ground state of Co3+ ions. We further note that the unconventional strain relaxation did not involve any uncontrolled misfit dislocations.

  8. Raman spectroscopy of thin films

    Science.gov (United States)

    Burgess, James Shaw

    Raman spectroscopy was used in conjunction with x-ray diffraction and x-ray photoelectron spectroscopy to elucidate structural and compositional information on a variety of samples. Raman was used on the unique La 2NiMnO6 mixed double perovskite which is a member of the LaMnO3 family of perovskites and has multiferroic properties. Raman was also used on nanodiamond films as well as some boron-doped carbon compounds. Finally, Raman was used to identify metal-dendrimer bonds that have previously been overlooked. Vibrational modes for La2NiMnO6 were ascribed by comparing spectra with that for LaMnO3 bulk and thin film spectra. The two most prominent modes were labeled as an asymmetric stretch (A g) centered around 535 cm-1 and a symmetric stretch (B g) centered around 678 cm. The heteroepitaxial quality of La2NiMnO 6 films on SrTiO3 (100) and LaAlO3 (100) substrates were examined using the Raman microscope by way of depth profile experiments and by varying the thickness of the films. It was found that thin films (10 nm) had much greater strain on the LaAlO3 substrate than on the SrTiO3 substrate by examining the shifts of the Ag and the Bg modes from their bulk positions. Changes in the unit cell owing to the presence of oxygen defects were also monitored using Raman spectroscopy. It was found that the Ag and Bg modes shifted between samples formed with different oxygen partial pressures. These shifts could be correlated to changes in the symmetry of the manganese centers due to oxygen defects. Raman spectroscopy was used to examine the structural and compositional characteristics of carbon materials. Nanocrystalline diamond coated cutting tools were examined using the Raman Microscope. Impact, abrasion, and depth profile experiments indicated that delamination was the primary cause of film failure in these systems. Boron doped material of interest as catalyst supports were also examined. Monitoring of the G-mode and intensities of the D- and G-modes indicated that

  9. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  10. Room Temperature Ferromagnetism and Structure of Zn_(1-x)Cu_xO Films Synthesized by Radio Frequency Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    CHEN Xuemei; ZHUGE Lanjian; WU Xuemei; WU Zhaofeng

    2009-01-01

    Zn_(1-x)Cu_xO thin films were synthesized by the radio frequency (RF) magnetron sputtering technique using a ZnO target containing different pieces of small Cu-chips.X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to analyze the crystalline and microstructure of the film,and X-ray photoelectron spectroscopy (XPS) was used to establish the bonding characteristics and oxidation states of copper inside the ZnO host.Room temperature (RT) ferromagnetism was observed in the Zn_(1-x)Cu_xO films by a Quantum Design superconducting quantum interference device (SQUID) and the saturation magnetic moment of the films was found to decrease with the increase in Cu content.

  11. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  12. Observation of a low Curie temperature ferromagnetic phase of ultrathin epitaxial Fe films on GaAs(0 0 1)

    Energy Technology Data Exchange (ETDEWEB)

    Spangenberg, M. [Joule Physics Laboratory, The Crescent, Institute for Materials Research, University of Salford, Salford M5 4WT (United Kingdom); Neal, J.R. [Joule Physics Laboratory, The Crescent, Institute for Materials Research, University of Salford, Salford M5 4WT (United Kingdom); Shen, T.-H. [Joule Physics Laboratory, The Crescent, Institute for Materials Research, University of Salford, Salford M5 4WT (United Kingdom)]. E-mail: t.shen@salford.ac.uk; Morton, S.A. [Department of Chemistry and Materials Science, Lawrence Livermore National Laboratory, CA 94550 (United States); Tobin, J.G. [Department of Chemistry and Materials Science, Lawrence Livermore National Laboratory, CA 94550 (United States); Waddill, G.D. [Department of Physics, University of Missouri-Rolla, Rolla, MO 65409 (United States); Matthew, J.A.D. [Department of Physics, University of York, York YO1 5DD (United Kingdom); Greig, D. [Department of Physics and Astronomy, University of Leeds, Leeds LS2 9JT (United Kingdom); Malins, A.E.R. [CLRC Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Seddon, E.A. [CLRC Daresbury Laboratory, Warrington WA4 4AD (United Kingdom); Hopkinson, M. [EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)

    2005-04-15

    The magnetic properties of epitaxial Fe films on GaAs in the range of the first few monolayers have been the subject of a considerable number of investigations in recent years. The absence of magnetic signatures at room temperature has been attributed to the existence of a magnetic 'dead' layer as well as superparamagnetism. By examining the temperature dependence of the magnetic linear dichroism of the Fe core level photoelectrons, we found a ferromagnetic regime with a Curie temperature, T {sub c} substantially lower than room temperature, e.g., a T {sub c} of about 240 K for thin films of a nominal thickness of 0.9 nm. The values of Curie temperature were sensitive to the initial GaAs substrate conditions and the thickness of the Fe over-layer with a layer of thickness of 1.25 nm showing a T {sub c} above room temperature. The data suggest that the thin Fe films on GaAs(0 0 1) may have ferromagnetic character at an earlier stage of growth than previously expected, although a weaker exchange interaction in the films leads to a substantial reduction in Curie temperature.

  13. Local imaging of magnetic flux in superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shapoval, Tetyana

    2010-01-26

    Local studies of magnetic flux line (vortex) distribution in superconducting thin films and their pinning by natural and artificial defects have been performed using low-temperature magnetic force microscopy (LT-MFM). Taken a 100 nm thin NbN film as an example, the depinning of vortices from natural defects under the influence of the force that the MFM tip exerts on the individual vortex was visualized and the local pinning force was estimated. The good agreement of these results with global transport measurements demonstrates that MFM is a powerful and reliable method to probe the local variation of the pinning landscape. Furthermore, it was demonstrated that the presence of an ordered array of 1-{mu}m-sized ferromagnetic permalloy dots being in a magneticvortex state underneath the Nb film significantly influences the natural pinning landscape of the superconductor leading to commensurate pinning effects. This strong pinning exceeds the repulsive interaction between the superconducting vortices and allows vortex clusters to be located at each dot. Additionally, for industrially applicable YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films the main question discussed was the possibility of a direct correlation between vortices and artificial defects as well as vortex imaging on rough as-prepared thin films. Since the surface roughness (droplets, precipitates) causes a severe problem to the scanning MFM tip, a nanoscale wedge polishing technique that allows to overcome this problem was developed. Mounting the sample under a defined small angle results in a smooth surface and a monotonic thickness reduction of the film along the length of the sample. It provides a continuous insight from the film surface down to the substrate with surface sensitive scanning techniques. (orig.)

  14. Low temperature magnetic imaging of strained multiferroic EuTiO3 thin films

    Science.gov (United States)

    Geng, Yanan; Wu, Weida; Freeland, J. W.; Ryan, P.; Kim, J. W.; Ke, X.; Schiffer, P.; Lee, J. H.; Schlom, D. G.; Fennie, C. J.

    2010-03-01

    It has been predicted that the competition between paraelectric antiferromagnetic state and ferroelectric ferromagnetic state in perovskite EuTiO3 can be tuned by epitaxial strain.footnotetextC.J. Fennie and K.M. Rabe, Phys. Rev. Lett. 97, 267602 (2006). Tensile-strained EuTiO3 thin films grown on DyScO3 (110) substrate by molecular-beam epitaxy are confirmed to be ferromagnetic at low temperature by magnetometry and magneto-capacitance. Here we present magnetic imaging of EuTiO3/DyScO3 thin film using low temperature magnetic force microscopy (LT-MFM). Temperature dependence of MFM contrast confirms the ferromagnetic ground state. The magnetic field dependence of MFM images will be discussed in conjunction with magnetometry and magneto-capacitance measurements.

  15. Microwave properties of RF- sputtered ZnFe{sub 2}O{sub 4} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Garg, T., E-mail: gargphy@iitb.ac.in; Kulkarni, A. R.; Venkataramani, N. [Department of Metallurgical Engineering and Materials Science, IIT Bombay, Mumbai-400076 (India); Sahu, B. N.; Prasad, Shiva [Department of Physics, IIT Bombay, Mumbai-400076 (India)

    2014-04-24

    In this work, RF- magnetron sputtering technique has been employed to deposit nanocrystalline ZnFe{sub 2}O{sub 4} thin films at room temperature. The as grown films were ex-situ annealed in air for 2 h at temperatures from 150°C to 650°C. X-ray diffraction, vibrating sample magnetometer and ferromagnetic resonance were used to analyze the phase formation, magnetic properties and microwave properties respectively. From the hysteresis loops and ferromagnetic resonance spectra taken at room temperature, a systematic study on the effect of O{sub 2} plasma on microwave properties with respect to processing temperature has been carried out.

  16. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  17. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  18. Carbon nanotube based transparent conductive thin films.

    Science.gov (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T

    2006-07-01

    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.

  19. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  20. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  1. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  2. Magnetic ordering in nickel-zinc nanoferrite thin film formed by Langmuir Blodgett technique

    Science.gov (United States)

    Thakur, Sangeeta; Pandit, Pallavi; Sharma, S. K.; Katyal, S. C.; Singh, Mahavir; Gupta, Ajay

    2013-12-01

    Nickel-zinc nanoferrite thin films, which reveal application for magnetic materials, were prepared by Langmuir-Blodgett technique. X-ray reflectivity fitting was done using three layer model. Thickness of a monolayer of nanoparticles is obtained as 23.5 Å. Surface roughness increases as the thickness of the film increases. Fourier transform infrared spectra confirmed that the structure remains cubic spinel after thin film formation. We have measured zero-field cooled and field cooled magnetization and discussed the behavior in three parts: the ferromagnetic part, transition region, and the superparamagnetic part.

  3. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  4. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  5. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  6. The Influence of Deposition Temperature on the Epitaxial Growth of La0. 7 Ca0.3 MnO3 Thin Film

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    The growth conditions epitaxial thin film are investigated of Lao. 7 Cao. 3 MnO3 ( LCMO ) The results indicate that the deposition temperature plays a crucial role on the growth mode of LCMO thin film. There is an optimal deposition temperature, To, for the epitaxial growth of LCMO thin film. Just only at the To, the real epitaxial LCMO thin film can be obtained. When the deposition temperature deviates from the T,,, the thin film tends to be polycrystalline, although it orientes growth along a certain direction (a or c axis). Moreover, the experimental results show that just only for the epitaxial thin film the ferromagnetic-paramagnetic transition temperature (i. e. the Courier temperature T ) equals to the metal-semiconductor transition temperature ( To ). The ferromagnetic state shows metallicity and the paramagnetic state exhibits semiconducting character.

  7. Difference in magnetic properties between Co-doped ZnO powder and thin film

    Institute of Scientific and Technical Information of China (English)

    Liu Xue-Chao; Shi Er-Wei; Chen Zhi-Zhan; Zhang Hua-Wei; Zhang Tao; Song Li-Xin

    2007-01-01

    This paper reports that the Zn0.95Co0.05O polycrystalline powder and thin film were prepared by sol-gel technique under the similar preparation conditions. The former does not show typical ferromagnetic behaviour, while the latter exhibits obvious ferromagnetic properties at 5 K and room temperature. The UV-vis spectra and x-ray absorption spectra show that Co2+ ions are homogeneously incorporated into ZnO lattice without forming secondary phases. The distinct difference between film and powder sample is the c-axis (002) preferential orientation indicated by the x-ray diffraction pattern and field emission scanning electron microscopy measurement, which may be the reason why Zn0.95Co0.05O film shows ferromagnetic behaviour.

  8. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  9. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet

    2008-11-01

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  10. Micromotors using magnetostrictive thin films

    Science.gov (United States)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  11. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo

    2004-01-01

    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  12. Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films

    Directory of Open Access Journals (Sweden)

    M. Stiller

    2016-12-01

    Full Text Available The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.

  13. Novel metal-carbon(60) nanocrystalline magnetic thin films

    Science.gov (United States)

    Zheng, Lingyi

    1999-11-01

    A novel type of nanocrystalline magnetic thin films consisting of ferromagnetic metals and C60 have been developed and investigated. CO-C 60, Fe-C60 and CoFe-C60 with different concentrations of C60 thin films have been manufactured by thermal vapor codeposition. The microstructures and magnetic properties of the films can be significantly enhanced by varying the concentrations of C60 in the films. The stability of C60 and the compatibility of C60 with the metallic matrices are confirmed by mass spectrometry, Raman, WDS, XRD and TEM. Strong metal- C60 interaction is indicated by higher desorption temperatures of C60 in the meta- C60 films than that in pure C60 and the peak shift in Raman spectra. TEM shows that the grain size of the matrix metal decreases proportionally with increasing C60 concentration. Nanosize uniform columnar grains with nanoscale dispersion of C60 on the grain boundaries are commonly observed in the metal-C60 films. A self- assembly grain growth model based on the size effect of C60 and the metal-C60 interaction is proposed to delineate the microstructural evolution by C60. Calculations based on this model are consistent with experimental observations and give a grain size vs. C60 (carbon) concentration relationship. Grain growth retardation by C60 is observed in a CO-C60 film. Out-plane magnetic remanence and coercivity are enhanced in both the CO-C60 and Fe-C60 films. In the in-plane direction, the coercivity deceases in CO- C60 films but increases slightly in Fe- C60 films with increasing C60 concentrations. In-plane magnetic anisotropy is detected in CO-C60 films but not in Fe-C60 films. Strong temperature-dependent magnetization remanence and saturation are found in both the Co- C60 and Fe-C60 films with high C60 concentrations due to the nanosize grain effects. Temperature effects on the coercivity of CO- C60 and Fe-C60 are different and determined by the intrinsic magnetocrystalline anisotropy energy. Coercivity of the CoFe-C60 films

  14. Interfacial Effects on Pentablock Ionomer Thin Films

    Science.gov (United States)

    Etampawala, Thusitha; Ratnaweera, Dilru; Osti, Naresh; Shrestha, Umesh; Perahia, Dvora; Majewski, Jaroslaw

    2011-03-01

    The interfacial behavior of multi block copolymer thin films results from a delicate balance between inherent phase segregation due to incompatibility of the blocks and the interactions of the individual blocks with the interfaces. Here in we report a study of thin films of ABCBA penta block copolymers, anionically synthesized, comprising of centered randomly sulfonated polystyrene block to which rubbery poly-ethylenebutalene is connected, terminated by blocks of poly-t-butylstyrene, kindly provided by Kraton. AFM and neutron reflectometry studies have shown that the surface structure of pristine films depends on film thickness and ranges from trapped micelles to thin layered films. Annealing above Tg for the styrene block results in rearrangements into relatively featureless air interface. Neutron reflectivity studies have shown that annealed films forms layers whose plane are parallel to the solid substrate with the bulky block at the air interface and the ionic block at the solid interface.

  15. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  16. High Curie temperature Mn5Ge3 thin films produced by non-diffusive reaction

    Science.gov (United States)

    Assaf, E.; Portavoce, A.; Hoummada, K.; Bertoglio, M.; Bertaina, S.

    2017-02-01

    Polycrystalline Mn5Ge3 thin films were produced on SiO2 using magnetron sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic force microscopy were used to determine the layer structures, and magnetic force microscopy, superconducting quantum interference device, and ferromagnetic resonance were used to determine their magnetic properties. RD-mediated layers exhibit similar magnetic properties as molecular beam epitaxy-grown monocrystalline Mn5Ge3 thin films, while NDR-mediated layers show magnetic properties similar to monocrystalline C-doped Mn5Ge3Cx thin films with 0.1 ≤ x ≤ 0.2. NDR appears as a complementary metal oxide semi-conductor-compatible efficient method to produce good magnetic quality high-Curie temperature Mn5Ge3 thin films.

  17. Microscopic properties of degradation-free capped GdN thin films studied by electron spin resonance

    Energy Technology Data Exchange (ETDEWEB)

    Shimokawa, Tokuro [Center for Collaborative Research and Technology Development, Kobe University, 1-1 Rokkodai, Nada, Kobe, Hyogo 657-8501 (Japan); Fukuoka, Yohei [Graduate School of Science, Kobe University, 1-1 Rokkodai, Nada, Kobe, Hyogo 657-8501 (Japan); Fujisawa, Masashi [Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8551 (Japan); Zhang, Weimin; Okubo, Susumu; Ohta, Hitoshi, E-mail: hohta@kobe-u.ac.jp [Molecular Photoscience Research Center, Kobe University, 1-1 Rokkodai, Nada, Kobe, Hyogo 657-8501 (Japan); Sakurai, Takahiro [Center for Supports to Research and Education Activities, Kobe University, 1-1 Rokkodai, Nada, Kobe, Hyogo 657-8501 (Japan); Vidyasagar, Reddithota; Yoshitomi, Hiroaki; Kitayama, Shinya; Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan)

    2015-01-28

    The microscopic magnetic properties of high-quality GdN thin films have been investigated by electron spin resonance (ESR) and ferromagnetic resonance (FMR) measurements. Detailed temperature dependence ESR measurements have shown the existence of two ferromagnetic components at lower temperatures, which was not clear from the previous magnetization measurements. The temperature, where the resonance shift occurs for the major ferromagnetic component, seems to be consistent with the Curie temperature obtained from the previous magnetization measurement. On the other hand, the divergence of line width is observed around 57 K for the minor ferromagnetic component. The magnetic anisotropies of GdN thin films have been obtained by the analysis of FMR angular dependence observed at 4.2 K. Combining the X-ray diffraction results, the correlation between the magnetic anisotropies and the lattice constants is discussed.

  18. Epitaxial growth of magnetic ZnCuO thin films by pulsed laser deposition

    Science.gov (United States)

    Kim, Dong Hun; Kim, Tae Cheol; Lee, Seung Han; Jung, Hyun Kyu; Jeong, Jaeeun; Han, Seung Ho

    2017-02-01

    The crystal structure and magnetic properties of epitaxial ZnO thin films doped with 5 at% Cu on SrTiO3 (001) and (111) substrates were investigated. In the case of films deposited in oxygen, unique crystallographic growth directions on different substrates were observed, while a metallic phase was detected in films grown under vacuum. The Cu-doped ZnO thin films deposited on the SrTiO3 (111) substrates, with hexagonal structures, showed a single epitaxial relationship with the substrates, whereas those deposited on the SrTiO3 (001) substrates showed a double epitaxial growth mode. The epitaxial ZnCuO thin films deposited on the SrTiO3 (111) substrates under high vacuum exhibited a ferromagnetic signal at room temperature.

  19. Insulating ferromagnetic oxide films: the controlling role of oxygen vacancy ordering

    Energy Technology Data Exchange (ETDEWEB)

    Salafranca Laforga, Juan I [ORNL; Salafranca, Juan [Universidad Complutense de Madrid, Spain; Biskup, Nevenko [ORNL; Mehta, Virat [University of California, Berkeley; Oxley, Mark P [ORNL; Suzuki, Yuri [Stanford University; Pennycook, Stephen J [University of Tennessee, Knoxville (UTK); Pantelides, Sokrates T. [Vanderbilt University, Nashville; Varela del Arco, Maria [ORNL

    2014-01-01

    The origin of ferromagnetism in strained epitaxial LaCoO3 films has been a long-standing mystery. Here, we combine atomically resolved Z-contrast imaging, electron-energy-loss spectroscopy, and density-functional calculations to demonstrate that, in epitaxial LaCoO3 films, oxygen-vacancy superstructures release strain, control the film s electronic properties, and produce the observed ferromagnetism via the excess electrons in the Co d states. Although oxygen vacancies typically dope a material n-type, we find that ordered vacancies induce Peierls-like minigaps which, combined with strain relaxation, trigger a nonlinear rupture of the energy bands, resulting in insulating behavior.

  20. Sequential assembly of phototunable ferromagnetic ultrathin films with perpendicular magnetic anisotropy.

    Science.gov (United States)

    Suda, Masayuki; Einaga, Yasuaki

    2009-01-01

    Getting organized: Assemblies of ferromagnetic FePt nanoparticles were generated with large perpendicular magnetic anisotropy by a magnetic-field-assisted layer-by-layer method, and subsequently layer-by-layer films consisting of L1(0)-FePt nanoparticles and organic polymers were prepared. These films are phototunable when photochromic molecules are used as polymer layers.

  1. Anisotropic Heisenberg model in thin film geometry

    Energy Technology Data Exchange (ETDEWEB)

    Akıncı, Ümit

    2014-01-01

    The effect of the anisotropy in the exchange interaction on the phase diagrams and magnetization behavior of the Heisenberg thin film has been investigated with effective field formulation in a two spin cluster using the decoupling approximation. Phase diagrams and magnetization behaviors have been obtained for several different cases, by grouping the systems in accordance with, whether the surfaces/interior of the film has anisotropic exchange interaction or not. - Highlights: • Phase diagrams of the anisotropic Heisenberg model on the thin film obtained • Dependence of the critical properties on the film thickness obtained • Effect of the anisotropy on the magnetic properties obtained.

  2. Insect thin films as solar collectors.

    Science.gov (United States)

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  3. Perpendicularly oriented barium ferrite thin films with low microwave loss, prepared by pulsed laser deposition

    Science.gov (United States)

    Da-Ming, Chen; Yuan-Xun, Li; Li-Kun, Han; Chao, Long; Huai-Wu, Zhang

    2016-06-01

    Barium ferrite (BaM) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition (PLD). The effects of deposition substrate temperature on the microstructure, magnetic and microwave properties of BaM thin films are investigated in detail. It is found that microstructure, magnetic and microwave properties of BaM thin film are very sensitive to deposition substrate temperature, and excellent BaM thin film is obtained when deposition temperature is 910 °C and oxygen pressure is 300 mTorr (1 Torr = 1.3332 × 102 Pa). X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology, and the crystallographic alignment degree can be calculated to be 0.94. Hysteresis loops reveal that the squareness ratio (M r/M s) is as high as 0.93, the saturated magnetization is 4004 Gs (1 Gs = 104 T), and the anisotropy field is 16.5 kOe (1 Oe = 79.5775 A·m-1). Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe, and the ferromagnetic resonance linewith is 108 Oe at 50 GHz, which means that this thin film has low microwave loss. These properties make the BaM thin films have potential applications in microwave devices. Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (Grant No. KFJJ201506), the Scientific Research Starting Foundation of Hainan University (Grant No. kyqd1539), and the Natural Science Foundation of Hainan Province (Grant No. 20165187).

  4. Local structure and magnetization of ferromagnetic Cu-doped ZnO films: No magnetism at the dopant?

    Energy Technology Data Exchange (ETDEWEB)

    Vachhani, P.S., E-mail: prashjdg@gmail.com [School of Physics, University of Hyderabad, Hyderabad 500 046 (India); Department of Physics, University of Trento, 38123 Povo, Trento (Italy); Šipr, O. [Institute of Physics AS CR v. v. i., Cukrovarnická 10, Prague (Czech Republic); Bhatnagar, A.K. [School of Physics, University of Hyderabad, Hyderabad 500 046 (India); School of Engineering Sciences & Technology, University of Hyderabad, Hyderabad 500 046 (India); Ramamoorthy, R.K. [Department of Physics, University of Trento, 38123 Povo, Trento (Italy); School of Engineering Sciences & Technology, University of Hyderabad, Hyderabad 500 046 (India); Choudhary, R.J.; Phase, D.M. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452 017 (India); Dalba, G. [Department of Physics, University of Trento, 38123 Povo, Trento (Italy); Kuzmin, A. [Institute of Solid State Physics, University of Latvia, LV-1063 Riga (Latvia); Rocca, F. [IFN-CNR, Institute for Photonics and Nanotechnologies, Unit “FBK-Photonics” of Trento, 38123 Povo, Trento (Italy)

    2016-09-05

    Relationship between magnetism and structure of Cu-doped ZnO was investigated at macroscopic and microscopic levels. Thin Zn{sub 1−x}Cu{sub x}O films (x = 0.02, 0.04, 0.07 and 0.10) were prepared by a pulsed laser deposition and characterized via superconducting quantum interference device (SQUID) magnetometry, high-resolution x-ray diffraction, and Cu K-edge and Zn K-edge x-ray absorption, x-ray linear dichroism and x-ray circular magnetic dichroism spectroscopy. Even though the samples exhibit room-temperature ferromagnetism with magnetization that increases with Cu concentration, we did not detect signatures of local magnetic moments associated with Cu atoms, as evidenced by the lack of any XMCD signal. The host ZnO wurtzite lattice is not significantly altered by the addition of Cu. At the same time, most of the Cu atoms are not incorporated into the wurtzite lattice but rather have a CuO-like coordination. These results indicate that ferromagnetism of the investigated Zn{sub 1−x}Cu{sub x}O films is not directly linked to the doping atoms but rather is due to some other changes which have been introduced to the host ZnO by the dopants. - Highlights: • Ferromagnetic Cu doped ZnO films have been prepared. • Magnetic moments are not actually associated with Cu atoms. • Observed ferromagnetism can be devoted to doping induced yet unspecified changes.

  5. Thin Ising films with competing walls: A Monte Carlo study

    Science.gov (United States)

    Binder, K.; Landau, D. P.; Ferrenberg, A. M.

    1995-04-01

    Ising magnets with a nearest neighbor ferromagnetic exchange interaction J on a simple cubic lattice are studied in a thin film geometry using extensive Monte Carlo simulations. The system has two large L×L parallel free surfaces, a distance D apart from each other, at which competing surface fields act, i.e., HD=-H1. In this geometry, the phase transition occurring in the bulk at a temperature Tcb is suppressed, and instead one observes the gradual formation of an interface between coexisting phases stabilized by the surface fields. While this interface is located in the center of the film for temperatures Tc(D)interface localization-delocalization transition predicted by Parry and Evans [Phys. Rev. Lett. 64, 439 (1990); Physica A 181, 250 (1992)]. For Tinterface is located either close to the left wall where H10 (and the total magnetization is negative). As predicted, for large D this transition temperature Tc(D) is close to the wetting transition Tw(H1) of the semi-infinite system, but the transition nevertheless has a two-dimensional Ising character. Due to crossover problems (for D-->∞ the width of the asymptotic Ising region shrinks to zero, and one presumably observes critical wetting in this model) this Ising nature is clearly seen only for rather thin films. For Tc(D)film thickness is obtained and compared to corresponding theoretical predictions.

  6. Annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Alves, M. J. P.; Gonzalez-Chavez, D. E.; Sommer, R. L. [Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, Urca, 22290-180 Rio de Janeiro, RJ (Brazil); Bohn, F. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

    2015-03-28

    We systematically investigate the annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films with thickness of 100 nm. We correlate the non-uniform residual stress obtained from grazing incidence x-ray diffraction measurements with the ferromagnetic resonance (FMR) linewidth due to effective field inhomogeneities measured from broadband ferromagnetic resonance absorption measurements. We also estimate the annealing temperature effect on the Gilbert and two-magnon scattering contributions to the total ferromagnetic resonance FMR linewidth. We show that the effective field inhomogeneities constitute the main contribution to the microwave linewidth, while this contribution is related to the non-uniform residual stress in the films which is reduced by thermal annealing.

  7. ANALYSES ON NONLINEAR COUPLING OF MAGNETO-THERMO-ELASTICITY OF FERROMAGNETIC THIN SHELL-Ⅰ: GENERALIZED VARIATIONAL THEORETICAL MODELING

    Institute of Scientific and Technical Information of China (English)

    Xingzhe Wang; Xiaojing Zheng

    2009-01-01

    Based on the generalized variational principle of magneto-thermo-elasticity of the ferromagnetic elastic medium, a nonlinear coupling theoretical modeling for a ferromagnetic thin shell is developed. All governing equations and boundary conditions for the ferromagnetic shell are obtained from the variational manipulations on the magnetic scalar potential, temperature and the elastic displacement related to the total energy functional. The multi-field couplings and geometrical nonlinearity of the ferromagnetic thin shell are taken into account in the modeling. The general modeling can be further deduced to existing models of the magneto-elasticity and the thermo-elasticity of a ferromagnetic shell and magneto-thermo-elasticity of a ferromagnetic plate, which axe coincident with the ones in literature.

  8. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  9. Manganese ferrite thin films Part II: Properties

    NARCIS (Netherlands)

    Hulscher, W.S.

    1972-01-01

    Some properties of evaporated manganese ferrite thin films are investigated, e.g. resistivity, magnetization reversal, Curie temperature, Faraday rotation and optical absorption. The properties are partly related to the partial oxygen pressure present during a preceding annealing process.

  10. Thin Film Photovoltaics: Markets and Industry

    National Research Council Canada - National Science Library

    Jäger-Waldau, Arnulf

    2012-01-01

    ...% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for solar modules...

  11. Highly stretchable wrinkled gold thin film wires

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  12. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  13. Thin solid-lubricant films in space

    Science.gov (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  14. Studies in thin film flows

    CERN Document Server

    McKinley, I S

    2000-01-01

    the general case of non-zero capillary number numerically. Using the lubrication approximation to the Navier-Stokes equations we investigate the evolution and stability of a thin film of incompressible Newtonian fluid on a planar substrate subjected to a jet of air blowing normally to the substrate. For the simple model of the air jet we adopt, the initially axisymmetric problems we study are identical to those of a drop spreading on a turntable rotating at constant angular velocity (the simplest model for spin coating). We consider both drops without a dry patch (referred to as 'non-annular') and drops with a dry patch at their centre (referred to as 'annular'). First, both symmetric two-dimensional and axisymmetric three-dimensional drops are considered in the quasi-static limit of small capillary number. The evolution of both non-annular and annular drops and the stability of equilibrium solutions to small perturbations with zero wavenumber are determined. Using a specially developed finite-difference code...

  15. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  16. ANALYSES ON NONLINEAR COUPLING OF MAGNETO-THERMO-ELASTICITY OF FERROMAGNETIC THIN SHELL-Ⅱ: FINITE ELEMENT MODELING AND APPLICATION

    Institute of Scientific and Technical Information of China (English)

    Xingzhe Wang; Xiaojing Zheng

    2009-01-01

    Based on the generalized variational principle of magneto-thermo-elasticity of a ferromagnetic thin shell established (see, Analyses on nonlinear coupling of magneto-thermo-elasticity of ferromagnetic thin shell-Ⅰ), the present paper developed a finite element modeling for the mechanical-magneto-thermal multi-field coupling of a ferromagnetic thin shell. The numerical modeling composes of finite element equations for three sub-systems of magnetic, thermal and deformation fields, as well as iterative methods for nonlinearities of the geometrical large-deflection and the multi-field coupling of the ferromagnetic shell. As examples, the numerical simulations on magneto-elastic behaviors of a ferromagnetic cylindrical shell in an applied magnetic field, and magneto-thermo-elastic behaviors of the shell in applied magnetic and thermal fields are carried out. The results are in good agreement with the experimental ones.

  17. Printable CIGS thin film solar cells

    Science.gov (United States)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  18. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  19. Photophysical properties of Alq3 thin films

    Science.gov (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Łukasiak, Z.; Sahraoui, B.

    2013-11-01

    This work contains investigation results of the photophysical properties of aluminum (III) tris(8-hydroxyquinoline) thin films. The Alq3 thin films were successfully fabricated by Physical Vapor Deposition technique. The films were grown on transparent: (quartz and glass) and semiconductor (n-type silica) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 100 °C and 150 °C. Morphology of the films was investigated by AFM technique. Photophysical properties were characterized via photoluminescence, transmission, second and third harmonic generation measurements. The thin films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. Photoluminescence of Alq3 films obtained in air were efficient and stable. The measurements of transmission, SHG and THG spectra allowed us to determine optical constant of the films. We find that the photophysical properties were strictly connected with the morphology and the annealing process significantly changes the structural properties of the films.

  20. Liquid phase deposition of electrochromic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  1. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  2. A thin-film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, Kees J.M.; Wieberdink, Johan W.; Fluitman, Jan H.J; Popma, Theo J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  3. Adhesion and friction of thin metal films

    Science.gov (United States)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  4. Thickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films

    Directory of Open Access Journals (Sweden)

    Anna Behler

    2013-12-01

    Full Text Available A thickness dependent exchange bias in the low temperature martensitic state of epitaxial Ni-Mn-Sn thin films is found. The effect can be retained down to very small thicknesses. For a Ni50Mn32Sn18 thin film, which does not undergo a martensitic transformation, no exchange bias is observed. Our results suggest that a significant interplay between ferromagnetic and antiferromagnetic regions, which is the origin for exchange bias, is only present in the martensite. The finding is supported by ab initio calculations showing that the antiferromagnetic order is stabilized in the phase.

  5. Robust room temperature ferromagnetism and band gap tuning in nonmagnetic Mg doped ZnO films

    Science.gov (United States)

    Quan, Zhiyong; Liu, Xia; Qi, Yan; Song, Zhilin; Qi, Shifei; Zhou, Guowei; Xu, Xiaohong

    2017-03-01

    Mg doped ZnO films with hexagonal wurtzite structure were deposited on c-cut sapphire Al2O3 substrates by pulsed laser deposition. Both room temperature ferromagnetism and band gap of the films simultaneously tuned by the concentration of oxygen vacancies were performed. Our results further reveal that the singly occupied oxygen vacancies should be responsible for the room temperature ferromagnetism and band gap narrowing. Singly occupied oxygen vacancies having the localized magnetic moments form bound magnetic polarons, which results in a long-range ferromagnetic ordering due to Mg doping. Moreover, band gap narrowing of the films is probably due to the formation of impurity band in the vicinity of valence band, originating from singly occupied oxygen vacancies. These results may build a bridge to understand the relationship between the magnetic and optical properties in oxide semiconductor, and are promising to integrate multiple functions in one system.

  6. Flexible Thin Metal Film Thermal Sensing System

    Science.gov (United States)

    Thomsen, Donald Laurence (Inventor)

    2012-01-01

    A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

  7. Magnetic properties of high Li doped ZnO sol–gel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vettumperumal, R. [P.G and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi (India); Kalyanaraman, S., E-mail: mayura_priya2003@yahoo.co.in [P.G and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi (India); Santoshkumar, B. [P.G and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi (India); Thangavel, R. [Department of Physics, Indian School of Mines, Dhanbad (India)

    2014-02-01

    Highlights: • Ferromagnetism in high Li doped ZnO films. • Magnetic properties observed by Guoy's and VSM method. • The rod and wrinkle like structures are observed from the surface of the films. • Band gap of ZnO does not get altered by high Li doping. - Abstract: Undoped and Li doped ZnO thin films were deposited on a glass substrate using the sol–gel dip coating method. The films were prepared at 5 mol.% and 10 mol.% of Li doped ZnO at 550 °C annealing temperature and the deposited films were characterized by X-ray diffraction (XRD), microscopic studies, Gouy's method, vibrating sample magnetometer (VSM) and UV–visible spectroscopy. All the deposited thin films had a hexagonal wurtzite structure with polycrystalline grains at random. Primarily magnetic properties of pure and Li doped ZnO films were observed by Guoy's method which depicted Dia and Para magnetic behavior at room temperature. VSM measurement reveals a coercivity of 97.7 Oe in the films. An inverse relative ferromagnetism was perceived in Li doped ZnO films which had an average transmission of <90%.

  8. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  9. NLO properties of functionalized DNA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Oksana [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)], E-mail: okrupka@mail.ru; El-ghayoury, Abdelkrim [University d' Angers, UFR Sciences, Laboratoire CIMMA UMR CNRS 6200, 2 Bd. Lavoisier, 49045 (France); Rau, Ileana; Sahraoui, Bouchta [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France); Grote, James G. [Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, 3005 Hobson Way, Dayton, OH 45433-7707 (United States); Kajzar, Francois [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)

    2008-10-31

    In this paper we investigate the third-order nonlinear optical properties of spin deposited thin films of DNA-based complexes using the optical third harmonic generation (THG) technique at a fundamental wavelength of 1064 nm. We found that the third-order susceptibility, {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}), of DNA-based films was about one order of magnitude larger than that of our reference, a pure silica slab. In thin films doped with 5% of the chromophore disperse red 1 (DR1), a two order of magnitude larger value of {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}) was observed.

  10. Preparation and Properties of Amorphous NiFe/Cu/NiFe Thin Films

    Institute of Scientific and Technical Information of China (English)

    YE Yun; JIANG Ya-dong; HU Wen-cheng; ZENG Hong-juan

    2004-01-01

    The amorphous of Permalloy on the copper subtract was studied using composite electroplating method. A portion of hydrogen brings the counteraction on the surface of cathode leading nickel-iron alloys to be anomalous in the process of co-depositing. The results of X-ray diffraction (XRD) show that the Ni-Fe alloys layer is amorphous. The Giant Magneto -Impedance (GMI) effect of Ni-Fe alloys was obtained under the optimal conditions, dependence on the soft magnetic property of Ni-Fe amorphous thin film. As a result, the ratios△ Z/Z of NiFe/Cu/NiFe amorphous thin film are 30% at 40 kHz which is in low frequency. Furthermore, the GMI value of NiFe/Cu/NiFe amorphous thin film with a sandwich structure is higher than that of single-layer ferromagnetic films of the same thickness.

  11. Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, W., E-mail: xiaotur@gmail.com; Jiang, S.; Sun, L.; Wang, Y. K.; Zhai, Y. [Department of Physics, Southeast University, Nanjing 211189 (China); Wong, P. K. J.; Wang, K.; Jong, M. P. de; Wiel, W. G. van der [NanoElectronics Group, MESA Institute for Nanotechnology, P.O. Box 217, 7500 AE Enschede (Netherlands); Laan, G. van der [Diamond Light Source, Magnetic Spectroscopy Group, Didcot OX11 0DE (United Kingdom)

    2014-05-07

    By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ∼6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd inclusion. X-ray magnetic circular dichroism measurements reveal a strong increase in the orbital-to-spin moment ratio of Fe with increasing Gd concentration, in full agreement with the increase in the Gilbert damping obtained for these thin films. Combined with x-ray diffraction and vibrating sample magnetometry, the results demonstrate that the FeGd thin films with dilute Gd doping of up to 20% are promising candidates for spin-transfer-torque applications in soft magnetic devices, in which an enhanced damping is required.

  12. Dip coated nickel zinc oxide thin films: Structural, optical and magnetic investigations

    Science.gov (United States)

    Kayani, Zohra Nazir; Kiran, Faiza; Riaz, Saira; Zia, Rehana; Naseem, Shahzad

    2015-01-01

    Dip-coating technique was used to deposit NiZnO thin films on glass substrates at varying withdrawal speed in the range of 150-350 mm/s and annealed at 500 °C for 4 h. X-ray diffraction (XRD) results showed that the deposited NiZnO thin films have a pure wurtzite structure without any significant change in the structure caused by substituting Zn ion with Ni ion. Crystallite size increased from 248 to 497 nm with increase in withdrawal speed. Vibrating Sample magnetometer (VSM) results indicated that NiZnO thin films exhibit ferromagnetic properties. Increase in saturation magnetization with increase in withdrawal speed is observed. Evaluated optical band gap of the films reduced from 3.18 eV to 2.50 eV with the increase in withdrawal speed of the substrate.

  13. Thin Ice Films at Mineral Surfaces.

    Science.gov (United States)

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood.

  14. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  15. Magnetoelectric thin film composites with interdigital electrodes

    Science.gov (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  16. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  17. Tungsten-doped thin film materials

    Science.gov (United States)

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  18. MOF thin films: existing and future applications.

    Science.gov (United States)

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  19. Significant room-temperature ferromagnetism in porous ZnO films: The role of oxygen vacancies

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xue; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

    2015-10-15

    Graphical abstract: - Highlights: • Porous ZnO films were deposited on porous anodic alumina substrates. • Significant ferromagnetism (FM) has been observed in porous ZnO films (110 emu/cm{sup 3}). • The strong magnetic anisotropy was observed in the porous ZnO films. • The origin of FM is attributed to the oxygen vacancy with a local magnetic moment. - Abstract: Pure porous ZnO films were prepared by direct current reactive magnetron sputtering on porous anodic alumina substrates. Remarkably large room-temperature ferromagnetism was observed in the films. The highest saturation moment along the out-of-plane direction was about 110 emu/cm{sup 3}. Experimental and theoretical results suggested that the oxygen vacancies and the unique porous structure of the films are responsible for the large ferromagnetism. There are two modes of coupling between oxygen vacancies in the porous ZnO films: (i) exchange interactions directly between the oxygen vacancies and (ii) with the mediation of conduction electrons. In addition, it was found that the magnetic moment of ZnO films can be changed by tuning the concentration of oxygen vacancies. These observations may be useful in the development of ZnO-based spintronics devices.

  20. Sprayed lanthanum doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouznit, Y., E-mail: Bouznit80@gmail.com [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Beggah, Y. [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Ynineb, F. [Laboratory of Thin Films and Interface, University Mentouri, Constantine 25000 (Algeria)

    2012-01-15

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  1. Sprayed lanthanum doped zinc oxide thin films

    Science.gov (United States)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  2. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  3. Influence of electrostatic charging on the magnetic and other physical properties of thin metallic films

    Energy Technology Data Exchange (ETDEWEB)

    Steinbeck, K.

    1971-01-01

    Electrical, superconducting and optical properties of thin metal films can be influenced by electrostatic charging. In the same way attempts have been made to change the saturation magnetization of ferromagnetic films, which was measured, e.g., with the torque method. Using the film as one plate of a capacitor torque changes are measured for different voltages. The torque changes are assumed to be caused by magnetization changes due to an altered electron concentration of the metal. The contribution of one unit charge to the magnetic moment was estimated to ca. /sup 1///sub 2/ mu/sub B/.

  4. Magnetowetting of Ferrofluidic Thin Liquid Films

    Science.gov (United States)

    Tenneti, Srinivas; Subramanian, Sri Ganesh; Chakraborty, Monojit; Soni, Gaurav; Dasgupta, Sunando

    2017-03-01

    An extended meniscus of a ferrofluid solution on a silicon surface is subjected to axisymmetric, non-uniform magnetic field resulting in significant forward movement of the thin liquid film. Image analyzing interferometry is used for accurate measurement of the film thickness profile, which in turn, is used to determine the instantaneous slope and the curvature of the moving film. The recorded video, depicting the motion of the film in the Lagrangian frame of reference, is analyzed frame by frame, eliciting accurate information about the velocity and acceleration of the film at any instant of time. The application of the magnetic field has resulted in unique changes of the film profile in terms of significant non-uniform increase in the local film curvature. This was further analyzed by developing a model, taking into account the effect of changes in the magnetic and shape-dependent interfacial force fields.

  5. Optical Constants of Cadmium Telluride Thin Film

    Science.gov (United States)

    Nithyakalyani, P.; Pandiaraman, M.; Pannir, P.; Sanjeeviraja, C.; Soundararajan, N.

    2008-04-01

    Cadmium Telluride (CdTe) is II-VI direct band gap semiconductor compound with potential application in Solar Energy conversion process. CdTe thin film of thickness 220 mn was prepared by thermal evaporation technique at a high vacuum better than 10-5 m.bar on well cleaned glass substrates of dimensions (l cm×3 cm). The transmittance spectrum and the reflectance spectrum of the prepared CdTc thin film was recorded using UV-Vis Spectrophotometer in the wavelength range between 300 nm and 900 nm. These spectral data were analyzed and the optical band and optical constants of CdTe Thin film have been determined by adopting suitable relations. The optical band gap of CdTe thin film is found to be 1.56 eV and this value is also agreeing with the published works of CdTe thin film prepared by various techniques. The absorption coefficient (α) has been higher than 106 cm-1. The Refractive index (n) and the Extinction Coefficient (k) are found to be varying from 3.0 to 4.0 and 0.1 Cm-1 to 0.5 Cm-1 respectively by varying the energy from l.0 eV to 4.0 eV. These results are also compared with the literature.

  6. Pulsed laser deposition of ferroelectric thin films

    Science.gov (United States)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  7. Photoluminescence Study of Copper Selenide Thin Films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.

    2011-10-01

    Thin films of Copper Selenide of composition of composition Cu7Se4 with thickness 350 nm are deposited on glass substrate at a temperature of 498 K±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%) and Selenium (99.99%) as the elemental starting material. The deposited film is characterized structurally using X-ray Diffraction. The structural parameters such as lattice constant, particle size, dislocation density; number of crystallites per unit area and strain in the film are evaluated. Photoluminescence of the film is analyzed at room temperature using Fluoro Max-3 Spectrofluorometer.

  8. Exciting transition metal doped dilute magnetic thin films: MgO:Er and ZnO:Er

    Science.gov (United States)

    Ćakıcı, T.; Sarıtaş, S.; Muǧlu, G. Merhan; Yıldırım, M.

    2017-02-01

    Erbium doped MgO and doped ZnO thin films have reasonably important properties applications in spintronic devices. These films were synthesized on glass substrates by Chemical Spray Pyrolysis (CSP) method. In the literature there has been almost no report on preparation of MgO:Er dilute magnetic thin films by means of CSP. Because doped thin films show different magnetic behaviors, depending upon the type of magnetic material ions, concentration of them, synthesis route and experimental conditions, synthesized MgO:Er and ZnO:Er films were compared to thin film properties. Optical analyses of the synthesized thin films were examined spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Structural analysis of the thin films was examined by using XRD, Raman Analysis, FE-SEM, EDX and AFM techniques. Also, magnetic properties of the MgO:Er and ZnO:Er films were investigated by vibrating sample magnetometer (VSM) which show that diamagnetic behavior of the MgO:Er thin film and ferromagnetic (FM) behavior of the ZnO:Er film were is formed.

  9. Thin film calorimetry of polymer films

    Science.gov (United States)

    Zhang, Wenhua; Rafailovich, Miriam; Sokolov, Jonathan; Salamon, William

    2000-03-01

    Polystryene and polymethylmethacrylate films for thicknesses ranging from 50nm to 500nm using a direct calorimetric technique (Lai et al, App. Phys. Lett. 67, p9(1995)). Samples were deposited on Ni foils(2-2.5um) and placed in a high vacuum oven. Calibrated heat pulses were input to the polymer films by current pulses to the Ni substrate and temperature changes were determined from the change in Ni resistance. Pulses producing temperature jumps of 3-8K were used and signal averaging over pulses reduced noise levels enough to identify glass transitions down to 50nm. Molecular weight dependence of thick films Tg was used as a temperature calibration.

  10. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  11. Competing magnetic anisotropies in obliquely deposited thin permalloy film

    Energy Technology Data Exchange (ETDEWEB)

    Belyaev, B.A. [Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Reshetnev Siberian State Aerospace University, 31, pr. Imeni Gazety “Krasnoyarskii Rabochii”, Krasnoyarsk 660014 (Russian Federation); Izotov, A.V. [Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation); Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 50/38, Akademgorodok, Krasnoyarsk 660036 (Russian Federation); Solovev, P.N., E-mail: platon.solovev@gmail.com [Siberian Federal University, 79, pr. Svobodnyi, Krasnoyarsk 660041 (Russian Federation)

    2016-01-15

    Distribution of the magnetic anisotropy in thin film prepared by thermal vacuum oblique deposition of permalloy with small off-normal angle of incident in the presence of an external magnetic field has been studied by ferromagnetic resonance technique. On local area of the sample, a mutual compensation of near orthogonal in-plane uniaxial magnetic anisotropies induced by oblique deposition and by applied magnetic field has been found. Moreover, in addition to the uniaxial (twofold) magnetic anisotropy, fourfold and sixfold magnetic anisotropies have been observed in the sample. To explain the obtained high-order anisotropies, we assumed that the sample has exchange coupled adjacent regions or phases with different parameters of magnetic anisotropy. The results of the micromagnetic analysis of a two-layer model of the sample confirm the hypothesis.

  12. FMR study of thin film FeGe skyrmionic material

    Science.gov (United States)

    Bhallamudi, Vidya P.; Page, Michael R.; Gallagher, James; Purser, Carola; Schulze, Joseph; Yang, Fengyuan; Hammel, P. Chris

    Magnetic Skyrmions have attracted intense interest due to their novel topological properties and the potential for energy efficient computing. Magnetic dynamics play an important part in enabling some of these functionalities. Understanding these dynamics can shed light on the interplay of the various magnetic interactions that exist in these materials and lead to a rich magnetic phase diagram, including the Skyrmion phase. We have grown phase-pure FeGe epitaxial films on Si (111) and studied them using ferromagnetic resonance (FMR). FeGe has one of the highest recorded skyrmion transition temperatures, close to room temperature, and thin films are known to further stabilize the Skyrmion phase in the magnetic field-temperature space. We have performed cavity-based single frequency FMR from liquid nitrogen to room temperature on 120 nm thick films in both in-plane and out-of-plane geometries. The resulting complex spectra are consistent with those reported in literature for the bulk material and can be understood in terms of a conical model for the magnetism. Variable temperature broadband spectroscopy and measurements on thinner films, to better identify the various magnetic phases and their dynamic behavior, are ongoing and their progress will be discussed. Funding for this research was provided by the Center for Emergent Materials: an NSF MRSEC under Award Number DMR-1420451.

  13. Crystallization of zirconia based thin films.

    Science.gov (United States)

    Stender, D; Frison, R; Conder, K; Rupp, J L M; Scherrer, B; Martynczuk, J M; Gauckler, L J; Schneider, C W; Lippert, T; Wokaun, A

    2015-07-28

    The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C.

  14. Discontinuity in heat capacity of Fe0.5Co0.5(110) alloy thin films

    Science.gov (United States)

    Ramírez-Dámaso, G.; Castillo-Alvarado, F.-L.; Cruz-Torres, A.; Rójas-Hernández, E.

    2016-07-01

    In this work we calculate heat capacity of alloy thin films of FeCo on the surface of the plane (110), using three parameters, the concentration x(i), the lattice long range order parameter t(i) and the magnetic order parameter σ(i), being i the number of layers of the thin film. The formulations reported by Hill [1] in the context of small particles and Valenta's model [2] can be applied to the film structure when we treat a thin film as a system divided into subsystems equivalent to two-dimensional parallel layers. The FeCo bulk alloy is completely homogeneous while a thin film have spatial discontinuities in their surfaces. We consider three ferromagnetic thin films formed by 11, 15 and 19 layers in the Helmholtz's free energy, which is minimized applying their first partial derivatives with respect to chemical composition, long range order parameter and magnetic order parameter. We calculate internal energy and heat capacity as a function of temperature and we verify that have two jumps as are reported in literature for the bulk; there are many results of bulk or surface effects of FeCo, but no enough results about ferromagnetic FeCo thin films and this fact does this work interesting.

  15. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  16. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  17. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  18. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  19. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  20. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2015-09-01

    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  1. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  2. Structural and magnetic properties of pulsed laser deposited Fe–SiC thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mukesh [Nanoscience Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee, UK 247 667 (India); Chandra, Ramesh, E-mail: ramesfic@iitr.ac.in [Nanoscience Laboratory, Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee, UK 247 667 (India); Goyat, Manjeet S. [University of Petroleum & Energy Studies, Dehradun, Uttarakhand 248007 (India); Mishra, Raghwesh; Tiwari, Rajesh K.; Saxena, A.K. [Applied Chemistry Division, Defence Materials & Stores Research & Development Establishment (DMSRDE), GT Road, Kanpur, UP 208013 (India)

    2015-03-31

    Structural and magnetic properties of Fe–SiC thin films have been studied. The Fe–SiC thin films were fabricated by pulsed laser deposition on Si (100) substrate and isochronally annealed at 1073 K and 1273 K in argon atmosphere for 2.5 h. The crystalline ordering of SiC into β-SiC phase and growths of other phases like Fe{sub 3}Si, SiO{sub 2} and FeSiO{sub 3} during annealing were investigated by X-ray diffraction and X-ray photoelectron spectroscopy measurements. The morphology of thin films was changed from voided structure to dense pyramidal-like structure due to annealing. A continuous decrease in the saturation magnetization and non-monotonic change in coercivity of Fe–SiC thin films were observed with increase in annealing temperature. - Highlights: • Structural and magnetic properties of Fe–SiC thin films have been studied. • Crystalline ordering of SiC into β-SiC phase was obtained at T ≥ 800 °C. • Annealed Fe–SiC thin films show ferromagnetic hysteresis at room temperature. • Coercivity was found to be dependent on the annealing temperature.

  3. Magnetically actuated peel test for thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ostrowicki, G.T.; Sitaraman, S.K., E-mail: suresh.sitaraman@me.gatech.edu

    2012-03-30

    Delamination along thin film interfaces is a prevalent failure mechanism in microelectronic, photonic, microelectromechanical systems, and other engineering applications. Current interfacial fracture test techniques specific to thin films are limited by either sophisticated mechanical fixturing, physical contact near the crack tip, or complicated stress fields. Moreover, these techniques are generally not suitable for investigating fatigue crack propagation under cyclical loading. Thus, a fixtureless and noncontact experimental test technique with potential for fatigue loading is proposed and implemented to study interfacial fracture toughness for thin film systems. The proposed test incorporates permanent magnets surface mounted onto micro-fabricated released thin film structures. An applied external magnetic field induces noncontact loading to initiate delamination along the interface between the thin film and underlying substrate. Characterization of the critical peel force and peel angle is accomplished through in situ deflection measurements, from which the fracture toughness can be inferred. The test method was used to obtain interfacial fracture strength of 0.8-1.9 J/m{sup 2} for 1.5-1.7 {mu}m electroplated copper on natively oxidized silicon substrates. - Highlights: Black-Right-Pointing-Pointer Non-contact magnetic actuation test for interfacial fracture characterization. Black-Right-Pointing-Pointer Applied load is determined through voltage applied to the driving electromagnet. Black-Right-Pointing-Pointer Displacement and delamination propagation is measured using an optical profiler. Black-Right-Pointing-Pointer Critical peel force and peel angle is measured for electroplated Cu thin-film on Si. Black-Right-Pointing-Pointer The measured interfacial fracture energy of Cu/Si interface is 0.8-1.9 J/m{sup 2}.

  4. Optically transparent magnetic and electrically conductive Fe-Cr-Zr ultra-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Louzguine-Luzgin, D.V.; Ketov, S.V.; Mizukami, S. [Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai (Japan); Orava, J. [Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai (Japan); Department of Materials Science and Metallurgy, University of Cambridge (United Kingdom)

    2014-05-15

    The transparent magnetic thin films having a nominal composition of Fe{sub 75}Cr{sub 15}Zr{sub 10} and containing nanocrystalline BCC Fe particles embedded in a metallic glassy matrix were deposited by a magnetron sputtering technique. The nanoparticles were homogeneously distributed in the glassy matrix, which results in the appearance of ferromagnetic properties. The phase composition and microstructure of the films were examined by X-ray diffractometry and scanning electron microscopy equipped with EDX spectroscopy. The magneto-optical properties of the obtained films were also studied by magnetic circular dichroism (MCD) method. The material obtained possesses three key properties: it is optically transparent in the visible-light range as well as electrically conductive and it shows ferromagnetism, which all of these are often mutually alternative. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. The magnetic mechanism of Zn0.93Co0.07O thin films

    Institute of Scientific and Technical Information of China (English)

    AU; ChakTong

    2009-01-01

    Zn0.93Co0.07O thin films infiltrated with nitrogen and aluminum were prepared by means of magneton sputtering. The structural and magnetic properties of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; whereas in the case of N infiltration, saturated magnetization decreased with the increase in N concentration. The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons.

  6. Capillary instabilities in thin films. I. Energetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    A stability theory is presented which describes the conditions under which thin films rupture. It is found that holes in the film will either grow or shrink, depending on whether their initial radius is larger or smaller than a critical value. If the holes grow large enough, they impinge to form islands; the size of which are determined by the surface energies. The formation of grooves where the grain boundary meets the free surface is a potential source of holes which can lead to film rupture. Equilibrium grain boundary groove depths are calculated for finite grain sizes. Comparison of groove depth and film thickness yields microstructural conditions for film rupture. In addition, pits which form at grain boundary vertices, where three grains meet, are another source of film instability.

  7. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2010-09-01

    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  8. Magnetite thin films: A simulational approach

    Energy Technology Data Exchange (ETDEWEB)

    Mazo-Zuluaga, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)]. E-mail: jomazo@fisica.udea.edu.co; Restrepo, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)

    2006-10-01

    In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent {nu}=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed.

  9. Thin Film Electrodes for Rare Event Detectors

    Science.gov (United States)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  10. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  11. Micro-sensor thin-film anemometer

    Science.gov (United States)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  12. Optimisation of superconducting thin films by TEM

    NARCIS (Netherlands)

    Bals, S.; van Tendeloo, G.; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Leca, V.; Salluzzo, M.

    2002-01-01

    High-resolution electron microscopy is used to study the initial growth of different REBa2Cu3O7−δ thin films. In DyBa2Cu3O7−δ ultra-thin films, deposited on TiO2 terminated SrTiO3, two different types of interface arrangements occur: bulk–SrO–TiO2–BaO–CuO–BaO–CuO2–Dy–CuO2–BaO–bulk and bulk–SrO–TiO2–

  13. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  14. Emittance Theory for Thin Film Selective Emitter

    Science.gov (United States)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  15. Environmentally stable sputter-deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, D.J.

    1978-03-01

    Accelerated corrosion data are presented for the titanium-silver and chrome-gold thin film metallization systems presently used at Sandia Laboratories. Improvements in corrosion, hence reliability, as a result of interposing a thin intermediate layer of either platinum or palladium are shown. Potentiometric measurements showing the alteration of corrosion potential with the use of palladium for the titanium-silver system are also presented.

  16. Electrical analysis of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Graça, M.P.F., E-mail: mpfg@ua.pt [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Saraiva, M. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Freire, F.N.A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Valente, M.A.; Costa, L.C. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2015-06-30

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O{sub 2} was kept constant at 1 Pa, while the O{sub 2} partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb{sub 2}O{sub 5} stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O{sub 2}). • Raman showed that increasing P(O{sub 2}), Nb{sub 2}O{sub 5} amorphous increases. • Conductivity tends to decrease with the increase of P(O{sub 2}). • Dielectric analysis indicates the inexistence of preferential grow direction.

  17. The origin of magnetism in transition metal-doped ZrO2 thin films: Experiment and theory

    KAUST Repository

    Hong, Nguyenhoa

    2013-10-04

    We have investigated the magnetic properties of Fe/Co/Ni-doped ZrO 2 laser ablated thin films in comparison with the known results of Mn-doped ZrO2, which is thought to be a promising material for spintronics applications. It is found that doping with a transition metal can induce room temperature ferromagnetism in \\'fake\\' diamond. Theoretical analysis based on density functional theory confirms the experimental measurements, by revealing that the magnetic moments of Mn- and Ni-doped ZrO2 thin films are much larger than that of Fe- or Co-doped ZrO2 thin films. Most importantly, our calculations confirm that Mn- and Ni-doped ZrO2 show a ferromagnetic ground state in comparison to Co- and Fe-doped ZrO 2, which favor an antiferromagnetic ground state. © 2013 IOP Publishing Ltd.

  18. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  19. Transport properties of nanoperforated Nb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Trezza, M., E-mail: trezza@sa.infn.i [Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica ' E. R. Caianiello' , Universita degli Studi di Salerno, Baronissi I-84081 (Italy); Cirillo, C. [Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica ' E. R. Caianiello' , Universita degli Studi di Salerno, Baronissi (Saudi Arabia) I-84081 (Italy); Prischepa, S.L. [State University of Informatics and RadioElectronics, P. Brovka Street 6, Minsk 220013 (Belarus); Attanasio, C. [Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica ' E. R. Caianiello' , Universita degli Studi di Salerno, Baronissi I-84081 (Italy)

    2010-10-01

    Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering, inherited from the Si substrates their structure, made of holes of 10 nm diameter and of 20 and 40 nm spacing, which provide an artificial pinning lattice. Commensurability effects between the Abrikosov vortex lattice and the artificial array of holes were investigated by transport measurements.

  20. Silver buffer layers for YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Tel Aviv Univ. (Israel). Center for Technol. Education Holon

    1999-09-01

    A simple economical conventional vacuum system was used for evaporation of YBCO thin films on as-deposited unbuffered Ag layers on MgO substrates. The subsequent heat treatment was carried out in low oxygen partial pressure at a relative low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using dc four probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). (orig.)

  1. Perovskite thin films via atomic layer deposition.

    Science.gov (United States)

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  2. Phase Coexistence in Nanoscopically Thin Films Confined by Asymmetric Walls

    Science.gov (United States)

    Albano, Ezequiel V.; Binder, Kurt

    2009-06-01

    Thin Ising films with nearest-neighbor ferromagnetic exchange in a bulk magnetic field H are studied in a L× L× D geometry, where at the opposite walls, given by the L× L surfaces, local magnetic fields H 1, and H D act. While in previous work, the symmetric case H 1= H D (leading to "capillary condensation", when one applies the lattice gas terminology) as well as the antisymmetric case H 1=- H D (leading to "interface localization transitions") were studied, we focus here on the general `asymmetric' case. Monte Carlo simulations are carried out and analyses based on thermodynamic integration methods are used to establish the phase diagrams and study the properties of the coexisting phases. A discussion is given why for the range of thicknesses that is explored (16≤ D≤80 lattice spacings) this is the most suitable methodology. Restricting attention to cases where in the semi-infinite system a first-order wetting transition occurs, it is shown that the latter, due to confinement, is turned in a thin-film triple point. Above the triple point, narrow two-phase coexistence curves are found, which are the analog of prewetting transitions in the semi-infinite system. A comparison to related results for (symmetrical) polymer blends and (asymmetric) colloid-polymer mixtures is made.

  3. Structural and magnetic properties of pure and Cu doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam –603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

    2015-06-24

    Pure and Cu (7 at.%) doped In{sub 2}O{sub 3} thin films were prepared using an electron beam evaporation technique. A systematic study was carried out on the structural, chemical and magnetic properties of the thin films. X-ray diffraction analysis revealed that all the films were cubic in structure. The pure and Cu doped In{sub 2}O{sub 3} thin films showed ferromagnetism at room temperature. The Cu doped In{sub 2}O{sub 3} thin films showed the saturation magnetization, coercivity and retentivity of 38.71 emu/cm{sup 3}, 245 G and 5.54 emu/cm{sup 3}, respectively.

  4. Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

    Institute of Scientific and Technical Information of China (English)

    Zhou Xin; Wang Shi-Qi; Lian Gui-Jun; Xiong Guang-Cheng

    2006-01-01

    High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlO3 substrates by pulsed laser deposition (PLD) in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600℃ in 1Pa of the mixture gas. In addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification Ⅰ-Ⅴ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.

  5. Perpendicular magnetic anisotropy in ultrathin Co|Ni multilayer films studied with ferromagnetic resonance and magnetic x-ray microspectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Macia, F., E-mail: ferran.macia@gmail.com [Department of Physics, New York University, 4 Washington Place, New York, NY 10003 (United States); Warnicke, P. [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, NY 11973 (United States); Bedau, D. [Department of Physics, New York University, 4 Washington Place, New York, NY 10003 (United States); Im, M.-Y.; Fischer, P. [Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Arena, D.A. [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, NY 11973 (United States); Kent, A.D. [Department of Physics, New York University, 4 Washington Place, New York, NY 10003 (United States)

    2012-11-15

    Ferromagnetic resonance (FMR) spectroscopy, x-ray magnetic circular dichroism (XMCD) spectroscopy and magnetic transmission soft x-ray microscopy (MTXM) experiments have been performed to gain insight into the magnetic anisotropy and domain structure of ultrathin Co|Ni multilayer films with a thin permalloy layer underneath. MTXM images with a spatial resolution better than 25 nm were obtained at the Co L{sub 3} edge down to an equivalent thickness of Co of only 1 nm, which establishes a new lower boundary on the sensitivity limit of MTXM. Domain sizes are shown to be strong functions of the anisotropy and thickness of the film. - Highlights: Black-Right-Pointing-Pointer We show record sensitivity of x-ray microscopy in a 1 nm Co effective thickness. Black-Right-Pointing-Pointer We found extreme sensitivity of the domain structure to number of bilayer repeats. Black-Right-Pointing-Pointer Perpendicular anisotropy is nearly independent of the number of bilayers. Black-Right-Pointing-Pointer We have combined Ferromagnetic resonance and high resolution XMCD microscopy.

  6. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and prospect

    Indian Academy of Sciences (India)

    M S Hegde

    2001-10-01

    Pulsed laser deposition (PLD) is a unique method to obtain epitaxial multi-component oxide films. Highly stoichiometric, nearly single crystal-like materials in the form of films can be made by PLD. Oxides which are synthesized at high oxygen pressure can be made into films at low oxygen partial pressure. Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications are presented. Future prospects of the method for fabricating epitaxial films of transition metal nitrides, chalcogenides, carbides and borides are discussed.

  7. YBCO thin films in ac and dc films

    CERN Document Server

    Shahzada, S

    2001-01-01

    We report studies on the dc magnetization of YBCO thin films in simultaneously applied dc and ac fields. The effect of the ac fields is to decrease the irreversible magnetization drastically leading to complete collapse of the hysteresis loops for relatively small ac fields (250e). The magnitude of the decrease depends on the component of the ac field parallel to the c-axis. The decrease is non-linear with ac amplitude and is explained in the framework of the critical state response of ultra thin films in perpendicular geometry. The ac fields increase the relaxation rapidly at short times while the long time response appears unaffected. (author)

  8. Workshop on thin film thermal conductivity measurements

    Science.gov (United States)

    Feldman, Albert; Balzaretti, Naira M.; Guenther, Arthur H.

    1998-04-01

    On a subject of considerable import to the laser-induced damage community, a two day workshop on the topic, Thin Film Thermal Conductivity Measurement was held as part of the 13th Symposium on Thermophysical Properties at the University of Colorado in Boulder CO, June 25 and 26, 1997. The Workshop consisted of 4 sessions of 17 oral presentations and two discussion sessions. Two related subjects of interest were covered; 1) methods and problems associated with measuring thermal conductivity ((kappa) ) of thin films, and 2) measuring and (kappa) of chemical vapor deposited (CVD) diamond. On the subject of thin film (kappa) measurement, several recently developed imaginative techniques were reviewed. However, several authors disagreed on how much (kappa) in a film differs from (kappa) in a bulk material of the same nominal composition. A subject of controversy was the definition of an interface. In the first discussion session, several questions were addressed, a principal one being, how do we know that the values of (kappa) we obtain are correct and is there a role for standards in thin film (kappa) measurement. The second discussion session was devoted to a round-robin interlaboratory comparison of (kappa) measurements on a set of CVD diamond specimens and several other specimens of lower thermal conductivity. Large interlaboratory differences obtained in an earlier round robin had been attributed to specimen inhomogeneity. Unfortunately, large differences were also observed in the second round robin even though the specimens were more homogenous. There was good consistency among the DC measurements, however, the AC measurements showed much greater variability. There was positive feedback from most of the attenders regarding the Workshop with nearly all respondents recommending another Workshop in three or fewer years. There was general recognition that thin film thermal conductivity measurements are important for predicting the resistance of optical coating

  9. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  10. Spin orientation driven static and dynamic magnetic process in amorphous FeCoBSi thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Peiheng; Luo, Xiaojia; Zhang, Li; Lu, Haipeng; Xie, Jianliang; Deng, Longjiang [State Key Laboratory of Electronic Thin Film and Integrated Devices, National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2015-06-07

    The spin orientation dependence of magnetic hysteresis and microwave ferromagnetic resonance data are investigated in FeCoBSi amorphous thin films. Demagnetization effect allows the weak interface-rooted out-of-plane anisotropy to build up local spin orientation domains under the dominant in-plane anisotropy. As a result, two phase magnetization reversal and double-peak ferromagnetic resonance traces with varying damping behavior are observed. Due to the distribution of in-plane and out-of-plane spin orientations, the ferromagnetic resonance bandwidth has been extensively expanded with the full width at half maximum increased from 1.2 GHz to 3.5 GHz.

  11. Magnetic, magnetooptical, and magnetotransport properties of Ti-substituted Co2FeGa thin films

    Science.gov (United States)

    Khovaylo, Vladimir; Rodionova, Valeria; Lyange, Maria; Chichay, Ksenia; Gan'shina, Elena; Novikov, Andrey; Zykov, Georgy; Bozhko, Alexei; Ohtsuka, Makoto; Umetsu, Rie Y.; Okubo, Akinari; Kainuma, Ryosuke

    2014-08-01

    Magnetic, magnetooptical and magnetotransport properties of Co50.3Fe20.3Ti5.6Ga23.8 thin films were studied for the as prepared as well as annealed samples. Measurements of transverse magnetooptical Kerr effect revealed that the spectral response of the films strongly depends on the structural ordering which can be manipulated by annealing conditions. Peculiarities in the magnetic properties of the films were attributed to the coexisting phases with different degree of structural disorder. Magnetoresistance of Co50.3Fe20.3Ti5.6Ga23.8 thin films was found to be linear in the fields above 1 T which is typical for half-Heusler systems as well as for Heusler-based ferromagnetic shape memory alloys.

  12. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)

    2007-07-15

    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Study of iron mononitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil, E-mail: mgupta@csr.res.in; Gupta, Mukul, E-mail: mgupta@csr.res.in; Phase, D. M., E-mail: mgupta@csr.res.in; Reddy, V. R., E-mail: mgupta@csr.res.in; Gupta, Ajay, E-mail: mgupta@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore,-452001 (India)

    2014-04-24

    In this work we have studied the crystal structural and local ordering of iron and nitrogen in iron mononitride thin films prepared using dc magnetron sputtering at sputtering power of 100W and 500W. The films were sputtered using pure nitrogen to enhance the reactivity of nitrogen with iron. The x-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and soft x-ray absorption spectroscopy (SXAS) studies shows that the film crystallizes in ZnS-type crystal structure.

  14. Epitaxy of layered semiconductor thin films

    Science.gov (United States)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.

    1993-03-01

    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  15. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  16. Thin films for micro solid oxide fuel cells

    Science.gov (United States)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  17. Multiferroic BiFeO{sub 3} thin films: Structural and magnetic characterization

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Z. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt); Atta, A. [National Center for Radiation Research and Technology (NCRRT), Nasr City, Cairo (Egypt); Abbas, Y. [Physics Department, Faculty of Science, Suez Canal University, Ismailia (Egypt); Sedeek, K.; Adam, A.; Abdeltwab, E. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt)

    2015-02-27

    BiFeO{sub 3} (BFO) film has been deposited on indium tin oxide (ITO) substrate by a simple sol–gel spin-coating technique. The crystal phase composition, surface morphology, topography and magnetization measurements of the BFO thin film were investigated using grazing incidence X-ray diffraction (GIXRD), scanning electronic microscope (SEM), atomic force microscope and vibrating sample magnetometer, respectively. GIXRD analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section SEM results indicated that compact and homogeneous BFO thin film was deposited on ITO with a thickness of about 180 nm. Moreover, most of A and E-symmetry normal modes of R3c BFO were assigned by Raman spectroscopy. We report here that the pure phase BFO film shows ferromagnetism at room temperature with remarkably high saturation magnetization of 63 kA m{sup −1}. Our results are discussed mainly in correlation with the condition of processing technique and destruction of the spiral spin cycloid at interface layers and grain boundaries. - Highlights: • Multiferroic BiFeO{sub 3} (BFO) thin film was prepared by sol–gel spin-coating method. • BFO film w asdeposited on indium tin oxide substrate with a thickness of 180 nm. • The film exhibits pure rhombohedral perovskite structure. • High saturation magnetization was recorded for our film at room temperature.

  18. Converse magnetoelectric effect via strain-driven magnetization reorientations in ultrathin ferromagnetic films on ferroelectric substrates

    Science.gov (United States)

    Pertsev, N. A.

    2015-07-01

    A phenomenological theory is developed for the strain-driven magnetization reorientations occurring in ultrathin ferromagnetic films coupled to ferroelectric substrates experiencing electric-field-induced piezoelectric deformations. The theory takes into account the surface/interface magnetic anisotropy playing an important role in the energetics of such films and first describes the thickness-driven spin reorientation transitions emerging in the presence of substrate-induced lattice strains. Then the threshold and critical intensities of the electric field created in a ferroelectric substrate are calculated, at which different magnetic states acquire the same energy or become unstable in a strained ferromagnetic overlayer. To demonstrate stability ranges of various possible magnetization orientations, we introduce magnetoelectric orientational diagrams, where the electric-field intensity and film thickness are employed as two variables. Such diagrams are constructed for ultrathin Ni, Fe, and F e60C o40 films coupled to single crystals of classical and relaxor ferroelectrics. The inspection of these diagrams shows that the use of multiferroic hybrids comprising ultrathin ferromagnetic films significantly enlarges the range of ferroic materials suitable for experimental observations of the strain-mediated converse magnetoelectric effect.

  19. Ternary compound thin film solar cells

    Science.gov (United States)

    Kazmerski, L. L.

    1975-01-01

    A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

  20. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji

    2008-11-01

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  1. Correlated dewetting patterns in thin polystyrene films

    Energy Technology Data Exchange (ETDEWEB)

    Neto, Chiara [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Jacobs, Karin [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Seemann, Ralf [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Blossey, Ralf [Centre for Bioinformatics, Saarland University, PO Box 151150, D-66041 Saarbruecken (Germany); Becker, Juergen [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany); Gruen, Guenther [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany)

    2003-01-15

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  2. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  3. Evidence of Microscopic Phase Segregation in CMR thin films

    Science.gov (United States)

    Imtiaz, Atif; Anlage, Steven

    2003-03-01

    We have used a Near Field Scanning Microwave Microscope (NFMM) to study local sheet resistance (Rx) contrast in 100nm thick La_0.67Ca_0.33MnO3 thin films. These films show a transition from charge-ordered insulating or paramagnetic insulating to a ferro-magnetic metallic state at a transition temperature Tc ( 250K for the film we studied). No Magnetic Field is applied when performing the experiment. We used our NFMM to study this sample above and below the Tc. Probe/sample distance control is achieved by employing a Scanning Tunneling Microscope feedback. Scanning is done in constant tunnel current mode, and microwave data is collected simultaneously. Several models (transmission line model and lumped element model) of microwave microscope are used to extract the Rx from the data of frequency shift and Quality factor versus position. The Rx images show evidence of the phase transition: we find that the sheet resistance distribution is broader for the data below Tc. Upon closer examination, we see evidence of inhomogeneous conductivity on the scale of 2.5nm below Tc. Discussion of these results and their modeling will be presented. [1] Atif Imtiaz and Steven M. Anlage, "A novel STM-assisted microwave microscope with capacitance and loss imaging capability", Ultramicroscopy (in press); cond-mat/0203540.

  4. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addres

  5. Electrostatic Discharge Effects in Thin Film Transistors

    NARCIS (Netherlands)

    Golo, Natasa

    2002-01-01

    Although amorphous silicon thin film transistors (α-Si:H TFT’s) have a very low electron mobility and pronounced instabilities of their electrical characteristics, they are still very useful and they have found their place in the semiconductors industry, as they possess some very good properties: th

  6. Thin-Film Solid Oxide Fuel Cells

    Science.gov (United States)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  7. Welding Wires To Thin Thermocouple Films

    Science.gov (United States)

    Holanda, Raymond; Kim, Walter S.; Danzey, Gerald A.; Pencil, Eric; Wadel, Mary

    1993-01-01

    Parallel-gap resistance welding yields joints surviving temperatures of about 1,000 degrees C. Much faster than thermocompression bonding. Also exceeds conductive-paste bonding and sputtering thin films through porous flame-sprayed insulation on prewelded lead wires. Introduces no foreign material into thermocouple circuit and does not require careful control of thickness of flame-sprayed material.

  8. Intelligent Processing of Ferroelectric Thin Films

    Science.gov (United States)

    1994-05-31

    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  9. Recent progress in thin film organic photodiodes

    NARCIS (Netherlands)

    Inganäs, Olle; Roman, Lucimara S.; Zhang, Fengling; Johansson, D.M.; Andersson, M.R.; Hummelen, J.C.

    2001-01-01

    We review current developments in organic photodiodes, with special reference to multilayer thin film optics, and modeling of organic donor-acceptor photodiodes. We indicate possibilities to enhance light absorption in devices by nanopatterning as well as by blending, and also discuss materials

  10. Recent progress in thin film organic photodiodes

    NARCIS (Netherlands)

    Inganäs, Olle; Roman, Lucimara S.; Zhang, Fengling; Johansson, D.M.; Andersson, M.R.; Hummelen, J.C.

    2001-01-01

    We review current developments in organic photodiodes, with special reference to multilayer thin film optics, and modeling of organic donor-acceptor photodiodes. We indicate possibilities to enhance light absorption in devices by nanopatterning as well as by blending, and also discuss materials scie

  11. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and prem

  12. Polarization Fatigue in Ferroelectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    王忆; K.H.WONG; 吴文彬

    2002-01-01

    The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.

  13. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic inst

  14. Rechargeable Thin-film Lithium Batteries

    Science.gov (United States)

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  15. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager;

    2015-01-01

    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

  16. Flexible thin-film NFC tags

    NARCIS (Netherlands)

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.

    2015-01-01

    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance char

  17. Bauschinger effect in unpassivated freestanding thin films

    NARCIS (Netherlands)

    Shishvan, S.S.; Nicola, L.; Van der Giessen, E.

    2010-01-01

    Two-dimensional (2D) discrete dislocation plasticity simulations are carried out to investigate the Bauschinger effect (BE) in freestanding thin films. The BE in plastic flow of polycrystalline materials is generally understood to be caused by inhomogeneous deformation during loading, leading to res

  18. Quasifree Mg–H thin films

    NARCIS (Netherlands)

    Baldi, A.; Palmisano, V.; Gonzalez-Silveira, M.; Pivak, Y.; Slaman, M.; Schreuders, H.; Dam, B.; Griessen, R.

    2009-01-01

    The thermodynamics of hydrogen absorption in Pd-capped Mg films are strongly dependent on the magnesium thickness. In the present work, we suppress such dependency by inserting a thin Ti layer between Mg and Pd. By means of optical measurements, we show that the surface energy contribution to the de

  19. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  20. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  1. Resistance contact thin-film resistor

    Directory of Open Access Journals (Sweden)

    Spirin V. G.

    2008-10-01

    Full Text Available The analytical model of the calculation of the contact resistance of the thin-film resistor is Offered. The Explored dependency of the contact resistance from wedge of the pickling. The Considered influence adhesive layer on warm-up stability of the resistor. They Are Received formulas of the calculation systematic and casual inaccuracy contributed by contact resistance.

  2. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  3. Surface roughness evolution of nanocomposite thin films

    NARCIS (Netherlands)

    Turkin, A; Pei, Y.T.; Shaha, K.P.; Chen, C.Q.; Vainchtein, David; Hosson, J.Th.M. De

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growin

  4. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  5. Electron spin resonance study of the demagnetization fields of the ferromagnetic and paramagnetic films

    Directory of Open Access Journals (Sweden)

    I.I. Gimazov, Yu.I. Talanov

    2015-12-01

    Full Text Available The results of the electron spin resonance study of the La1-xCaxMnO3 manganite and the diphenyl-picrylhydrazyl thin films for the magnetic field parallel and perpendicular to plane of the films are presented. The temperature dependence of the demagnetizing field is obtained. The parameters of the Curie-Weiss law are estimated for the paramagnetic thin film.

  6. 涂覆聚甲基丙酸甲酯的磁性膜外磁场作用下的往复滑动摩擦行为研究∗%Trib ological b ehavior of recipro cating motion b etween ferromagnetic films coated with p olymethylmethacrylate films under magnetic field

    Institute of Scientific and Technical Information of China (English)

    李绿洲; 蒋继乐; 卫荣汉; 李俊鹏; 田煜; 丁建宁

    2016-01-01

    Magnetic thin films are widely used in magnetic recording and magnetorheology, and also in magnetic lubrication such as ferromagnetic fluids. Polymethylmethacrylate (PMMA) is used as a coating material on the surface of the magnetic material in an electromagnetic system because of its good dielectric properties. In this study, the tribological behavior of reciprocating motion between ferromagnetic films coated with PMMA films under a magnetic field is evalu-ated. The system of ferromagnetic films coated with PMMA films based on glass is called ferromagnetic/PMMA double membrane in this paper. Two pieces of membranes in each tribological experiment are absolutely the same. Two kinds of experimental conditions, that is, under dry friction and silicone oil lubrication, are used to investigate the influences of load and magnetic field strength on the friction performance of ferromagnetic/PMMA double membranes. Experimental results show that the magnetic field directly affects the friction performance of a ferromagnetic /PMMA double-film system, and the performance changes with the normal load and intensity of the magnetic field. However, the influence of magnetic field on the tribological property in the dry friction mode is different from that in the silicone oil lubrication mode. The influences of magnetic force and the changes of the physical properties of the friction pair on friction and friction coefficient, which are both induced by the magnetic field, are analyzed. The theoretical analysis results are in good agreement with the experimental date. This work provides a basis for designing and controlling magnetic film interface media.

  7. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

    OpenAIRE

    2013-01-01

    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  8. Monte Carlo simulation of magnetic nanostructured thin films

    Institute of Scientific and Technical Information of China (English)

    Guan Zhi-Qiang; Yutaka Abe; Jiang Dong-Hua; Lin Hai; Yoshitake Yamazakia; Wu Chen-Xu

    2004-01-01

    @@ Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.

  9. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  10. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  11. Nonlocal thin films in calculations of the Casimir force

    NARCIS (Netherlands)

    Esquivel-Sirvent, R.; Svetovoy, V.B.

    2005-01-01

    The Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than th

  12. Ferromagnetism of Mn{sub x}Li{sub y}Zn{sub 1-x-y}O films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Xueyun [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Ge Shihui [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China)], E-mail: zhxy06@lzu.cn; Yao Dongsheng; Zuo Yalu; Xiao Yuhua [Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2008-08-15

    We had prepared Mn-doped ZnO and Li, Mn codoped-ZnO films with different concentrations using spin coating method. Crystal structure and magnetic measurements demonstrate that the impurity phases (ZnMnO{sub 3}) are not contributed to room temperature ferromagnetism and the ferromagnetism in Mn-doped ZnO film is intrinsic. Interesting, saturated magnetization decreases with Mn or Li concentration increase, showing that some antiferromagnetism exists in the samples with high Mn or Li concentration. In addition, Mn{sub 0.05}Zn{sub 0.95}O film annealed in vaccum shows larger ferromagnetism than the as-prepared sample and more oxygen vacancies induced by annealing in reducing atmosphere enhance ferromagnetism, which supports the bound magnetic polaron model on the origin of room temperature ferromagnetism.

  13. Impedance of nanometer thickness ferromagnetic Co40Fe40B20 films

    Directory of Open Access Journals (Sweden)

    Lo Chi

    2011-01-01

    Full Text Available Abstract Nanocrystalline Co40Fe40B20 films, with film thickness t f = 100 nm, were deposited on glass substrates by the magnetron sputtering method at room temperature. During the film deposition period, a dc magnetic field, h = 40 Oe, was applied to introduce an easy axis for each film sample: one with h||L and the other with h||w, where L and w are the length and width of the film. Ferromagnetic resonance (FMR, ultrahigh frequency impedance (IM, dc electrical resistivity (ρ, and magnetic hysteresis loops (MHL of these films were studied. From the MHL and r measurements, we obtain saturation magnetization 4πMs = 15.5 kG, anisotropy field H k = 0.031 kG, and r = 168 mW.cm. From FMR, we can determine the Kittel mode ferromagnetic resonance (FMR-K frequency f FMRK = 1,963 MHz. In the h||L case, IM spectra show the quasi-Kittel-mode ferromagnetic resonance (QFMR-K at f 0 and the Walker-mode ferromagnetic resonance (FMR-W at fn , where n = 1, 2, 3, and 4. In the h||w case, IM spectra show QFMR-K at F 0 and FMR-W at Fn . We find that f 0 and F 0 are shifted from f FMRK, respectively, and fn = Fn . The in-plane spin-wave resonances are responsible for those relative shifts. PACS No. 76.50.+q; 84.37.+q; 75.70.-i

  14. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    the increase in ionized impurity scattering.       Figure 1.48: Resistivity versus %Ga [125]  ZnO:Ga films were also  deposited  by  spray   pyrolysis ...Ilican  [137]  deposited   In‐doped  ZnO  thin  films  onto  glass  substrates  by  the  spray   pyrolysis   method at 350 oC substrate temperature. The...structure  of  ZnO  presented  the  following  findings:     The Polycrystalline ZnO  thin  films were  deposited  on a glass  substrate by a  spray

  15. MISSE 5 Thin Films Space Exposure Experiment

    Science.gov (United States)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  16. Determination of perpendicular magnetic anisotropy in ultrathin ferromagnetic films by extraordinary Hall voltage measurement.

    Science.gov (United States)

    Moon, Kyoung-Woong; Lee, Jae-Chul; Choe, Sug-Bong; Shin, Kyung-Ho

    2009-11-01

    A magnetometric technique for detecting the magnetic anisotropy field of ferromagnetic films is described. The technique is based on the extraordinary Hall voltage measurement with rotating the film under an external magnetic field. By analyzing the angle-dependent Hall voltage based on the Stoner-Wohlfarth theory, the magnetic anisotropy field is uniquely determined. The present technique is pertinent especially for ultrathin films with strong intrinsic signal, in contrast to the conventional magnetometric techniques of which the signal is in proportion to the sample volume and geometry.

  17. Thin blend films of cellulose and polyacrylonitrile

    Science.gov (United States)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  18. Thin-film semiconductor rectifier has improved properties

    Science.gov (United States)

    1966-01-01

    Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

  19. Thin Film Electrochemical Power Cells

    Science.gov (United States)

    1991-01-01

    Anion Intercalating Polymer Cathode", proceedings of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. K. Naoi, W.H...of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. M. Lien and W.H. Smyrl, "An Impedance Study of Polyvinylferrocene...Films", in Transient Techniques in Corrosion Science and Engineering, eds. W.H. Smyrl, et al., Electrochemical Society , 1989. K, Naoi, M.M. Lien and

  20. Fabrication and properties of SmFe2-PZT magnetoelectric thin films

    KAUST Repository

    Giouroudi, Ioanna

    2013-05-17

    Magnetoelectric (ME) thin film composites are attracting a continually increasing interest due to their unique features and potential applications in multifunctional microdevices and integrated units such as sensors, actuators and energy harvesting modules. By combining piezoelectric and highly magnetostrictive thin films, the potentialities of these materials increase. In this paper we report the fabrication of SmFe2 and PZT thin films and the investigation of their properties. First of all, a ~ 400 nm thin SmFe film was deposited on top of Si/SiO2 substrate by magnetron sputter deposition. Afterwards, a 140 nm Pt bottom electrode was sputtered on top of the SmFe film forming a bottom electrode. Spin coating was employed for the deposition of the 150 nm thin PZT layer. A PZT solution with 10 %Pb excess was utilized for this fabrication step. Finally, circular Pt top electrodes were sputtered as top electrodes. This paper focuses on the microstructure of the individual films characterized by X-Ray diffractometer (XRD) and scanning electron microscopy (SEM). A piezoelectric evaluation system, aixPES, with TF2000E analyzer component was used for the electric hysteresis measurements of PZT thin films and a vibrating sample magnetometer (VSM) was employed for the magnetic characterization of the SmFe. The developed thin films and the fabricated double layer SmFe-PZT exhibit both good ferromagnetic and piezoelectric responses which predict a promising ME composite structure. The quantitative chemical composition of the samples was confirmed by energy dispersive spectroscopy (EDX). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  1. Low-field microwave absorption in pulse laser deposited FeSi thin film

    Energy Technology Data Exchange (ETDEWEB)

    Gavi, H. [Department of Physics, SARCHI Chair in Carbon Technology and Materials, Institute of Applied Materials, University of Pretoria, Pretoria 0028 (South Africa); Ngom, B.D. [Groupe d Laboratoires de Physique des Solid et des Materiaux, Faculte deSciences et Techniques, Universite Cheikh Anta de Dakar, BP 25114 Dakar-Fann, Daka 16996 (Senegal); Institut National de la Recherche Scientifique Centre-Energie Materiaux, Telecommunications 1650, Boulevard Lionel Boulet Varennes (Quebec), Canada J3X 1S2 (Canada); Beye, A.C. [Groupe d Laboratoires de Physique des Solid et des Materiaux, Faculte deSciences et Techniques, Universite Cheikh Anta de Dakar, BP 25114 Dakar-Fann, Daka 16996 (Senegal); Strydom, A.M. [Department of Physics, University of Johannesburg, Johannesburg 2006 (South Africa); Srinivasu, V.V., E-mail: vallavs@unisa.ac.za [Department of Physics, University of South Africa, Pretoria 0003 (South Africa); Chaker, M. [Institut National de la Recherche Scientifique Centre-Energie Materiaux, Telecommunications 1650, Boulevard Lionel Boulet Varennes (Quebec), Canada J3X 1S2 (Canada); Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, SARCHI Chair in Carbon Technology and Materials, Institute of Applied Materials, University of Pretoria, Pretoria 0028 (South Africa)

    2012-03-15

    Low field microwave absorption (LFMA) measurements at 9.4 GHz (X-band), were carried out on pulse laser deposited (PLD) polycrystalline B20 cubic structure FeSi thin film grown on Si (111) substrate. The LFMA properties of the films were investigated as a function of DC field, temperature, microwave power and the orientation of DC field with respect to the film surface. The LFMA signal is very strong when the DC field is parallel to the film surface and vanishes at higher angles. The LFMA signal strength increases as the microwave power is increased. The LFMA signal disappears around 340 K, which can be attributed to the disappearance of ferromagnetic state well above room temperature in these films. We believe that domain structure evolution in low fields, which in turn modifies the low field permeability as well as the anisotropy, could be the origin of the LFMA observed in these films. The observation of LFMA opens the possibility of the FeSi films to be used as low magnetic field sensors in the microwave and rf frequency regions. - Highlights: Black-Right-Pointing-Pointer B20 crystalline FeSi thin film shows low field microwave absorption. Black-Right-Pointing-Pointer Usual ferromagnic resonance typical of magnetic materials is observed in FeSi film. Black-Right-Pointing-Pointer FeSi film can be used for low magnetic field sensors.

  2. Thin film bismuth iron oxides useful for piezoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  3. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  4. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  5. When are thin films of metals metallic?

    Science.gov (United States)

    Plummer, E. W.; Dowben, P. A.

    1993-04-01

    There is an increasing body of experimental information suggesting that very thin films of materials, normally considered to be metals, exhibit behavior characteristic of a nonmetal. In almost all cases, there is a nonmetal-to-metal transition as a function of film density or thickness, frequently accompanied by a structural transition. Amazingly, this behavior seems to occur for metal films on metal substrates, as well as for metals on semiconductors. The identification of this phenomena and the subsequent explanation has been slow in developing, due to the inability to directly measure the conductivity of a submonolayer film. This paper will discuss the evidence accumulated from variety of spectroscopic experimental techniques for three systems: a Mott-Hubbard transition, a Peierls-like distortion, and a Wilson transition.

  6. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  7. Cathodoluminescence degradation of PLD thin films

    Science.gov (United States)

    Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Nsimama, P. D.; Dejene, F. B.; Dolo, J. J.

    2010-12-01

    The cathodoluminescence (CL) intensities of Y2SiO5:Ce3+, Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10-6 Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y2SiO5:Ce3+ a luminescent SiO2 layer formed during the electron bombardment. Gd2O3 and SrO thin films formed on the surfaces of Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+, respectively, due to ESSCRs.

  8. Thin Films for Coating Nanomaterials

    Institute of Scientific and Technical Information of China (English)

    S.M.Mukhopadhyay; P.Joshi; R.V.Pulikollu

    2005-01-01

    For nano-structured solids (those with one or more dimensions in the 1-100 nm range), attempts of surface modification can pose significant and new challenges. In traditional materials, the surface coating could be several hundreds nanometers in thickness, or even microns and millimeters. In a nano-structured material, such as particle or nanofibers, the coating thickness has to be substantially smaller than the bulk dimensions (100 nm or less), yet be durable and effective. In this paper, some aspects of effective nanometer scale coatings have been discussed. These films have been deposited by a non-line of sight (plasma)techniques; and therefore, they are capable of modifying nanofibers, near net shape cellular foams, and other high porosity materials. Two types of coatings will be focused upon: (a) those that make the surface inert and (b) those designed to enhance surface reactivity and bonding. The former has been achieved by forming 1-2 nm layer of -CF2- (and/or CF3) groups on the surface, and the latter by creating a nanolayer of SiO2-type compound. Nucleation and growth studies of the plasma-generated film indicate that they start forming as 2-3 nm high islands that grow laterally, and eventually completely cover the surface with 2-3nm film. Contact angle measurements indicate that these nano-coatings are fully functional even before they have achieved complete coverage of 2-3 nm. They should therefore be applicable to nano-structural solids.This is corroborated by application of these films on vapor grown nanofibers of carbon, and on graphitic foams. Coated and uncoated materials are infiltrated with epoxy matrix to form composites and their microstructure, as well as mechanical behaviors are compared. The results show that the nano-oxide coating can significantly enhance bond formation between carbon and organic phases, thereby enhancing wettability,dispersion, and composite behavior. The fluorocarbon coating, as expected, reduces bond formation, and

  9. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  10. Left-handed materials in magnetized metallic magnetic thin films

    Institute of Scientific and Technical Information of China (English)

    WU Rui-xin; XIAO John Q.

    2006-01-01

    The authors' theoretical investigation on the high-frequency response of magnetized metallic magnetic films showed that magnetic films may become left-handed materials (LHMs) near the ferromagnetic resonance frequency of incident waves with right-handed circular polarization (RCP) and linear polarization (LP). The frequency range where LHM exists depends on the waves polarization, the magnetic damping coefficient, and the ferromagnetic characteristic frequency ωm of the film. There also exists a critical damping coefficient αc, above which the left-handed properties disappear completely.

  11. Exchange bias and anisotropy analysis of nano-composite Co{sub 84}Zr{sub 16}N thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jitendra, E-mail: jitendra@ceeri.ernet.in [CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031 (India); Academy of Scientific and Innovative Research, Chennai 600113 (India); Taube, William Ringal [CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031 (India); Academy of Scientific and Innovative Research, Chennai 600113 (India); Ansari, Akhtar Saleem [Department of Applied Physics, Aligarh Muslim University, Aligarh 202002 (India); Gupta, Sanjeev Kumar [Academy of Scientific and Innovative Research, Chennai 600113 (India); Kulriya, Pawan Kumar [Inter-University Accelerator Centre, New Delhi 110067 (India); Akhtar, Jamil [CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031 (India); Academy of Scientific and Innovative Research, Chennai 600113 (India)

    2015-03-15

    Nano-composite Co{sub 84}Zr{sub 16}N (CZN) films were prepared by reactive co-sputter deposition. As-deposited CZN films have not shown any exchange bias effect. But annealed (390 K) and field cooled samples have shown exchange bias phenomena. The observed exchange bias is attributed to inter-cluster exchange coupling between ferromagnetic and antiferromagnetic nano-composite phase. High resolution transmission electron microscope study reveals that, the CZN films are composed of ordered and crystalline ferromagnetic Cobalt nano-clusters embedded in an antiferromagnetic matrix. X-ray diffraction confirms the poly-crystalline growth of the CZN films with a preferred fcc (622) phase formation. In-plane anisotropy of the exchange biased films was investigated by rotational magnetization curve, and the analysis shows that the magnetization reversal behaves according to the coherent rotation of the magnetic moment vector. Effectively, exchange bias effect in such single layer films could be attributed to co-existing antiferromagnetic and ferromagnetic phase within the single layer. Such single layer nano-composite films can be a possible alternative to the bilayer combination of antiferromagnetic/ferromagnetic exchange biased films and are ideally suited for spintronics and tunnel junction applications. - Highlights: • Exchange bias effect observed in 390 K annealed and field cooled single layer nanocomposite Co{sub 84}Zr{sub 16}N (CZN) thin films. • CZN films are composed of ordered and crystalline ferromagnetic Cobalt nano-clusters embedded in antiferromagnetic matrix. • Uniaxial magnetic anisotropy investigated by rotational magnetization curve, and magnetization reversal behaves according to coherent rotation of magnetic moment vector. • Co-existing FM and AF phases in composite matrix are lead to extraordinary EB behavior.

  12. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  13. Out-of-Plane Magnetic Anisotropy and Microwave Permeability of Magnetoelastic FeCoSiB Amorphous Thin Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The amorphous magnetoelastic Fe66Co17Si1B6 thin films have been deposited by dc magnetron sputtering. A lot of "nano-trenches" have been observed on the film surfaces by AFM. The permeability of amorphous Fe66Co17Si1B6 thin films was measured within the frequency range of 0.6GHz-10.2 GHz. The ferromagnetic resonance frequency was found to be 1.2 GHz. MFM shows that the domain of thin film is a maze-type pattern, which indicates that an out-of-plane magnetic anisotropy exists. The out-of-plane anisotropy is believed due to the stress-induced magnetic anisotropy. It can be inferred that the internal stress is tensile stress and normal to the film plane.

  14. Using neutron scattering to explore new magnetoelectric phenomena in both thin films and skyrmion lattices

    Science.gov (United States)

    White, Jonathan

    2014-03-01

    Neutron scattering continues to be an invaluable tool for exploring the microscopic magnetic properties of magnetoelectric (ME) and multiferroic materials. Here I will present studies where neutron scattering techniques less commonly used for studying MEs have provided pivotal insight into new ME coupling phenomena. Firstly, we have used polarized neutron reflectometry (PNR) in a study of multiferroic and strained orthorhombic (o-) LuMnO3 thin films. Unlike bulk o-LuMnO3 which is a commensurate antiferromagnet, the films display drastically different properties and are simultaneously incommensurately antiferromagnetic and ferromagnetic at low temperature. The pivotal PNR experiments allowed us to measure the spatial distribution of the ferromagnetic magnetization in the films, and show that the ferromagnetism is most pronounced close to the film-substrate interface which is highly strained due to the lattice mismatch. We could further show the ferromagnetism and antiferromagnetism in the film to be directly coupled, and so demonstrate the promising functional properties of these films. Secondly, we have used small-angle neutron scattering (SANS) to study the topologically protected magnetic spin vortices, or skyrmions, in the chiral-lattice ME insulator Cu2OSeO3. Until 2012, skyrmions had been observed only in (semi)conducting B20 compounds where it is known that they can be manipulated by conduction electrons. From our SANS experiments on Cu2OSeO3, we show that applied electric fields can control the skyrmion lattice orientation in insulators, and in an essentially lossless manner that is dependent on both the size and sign of the electric field. These results provide the first evidence for a the electric field control of topologically protected magnetism in bulk magnetoelectrics.

  15. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  16. Effect of Ar pressure on the magnetic properties of Fe-Si sub 3 N sub x thin films prepared by co-sputtering

    CERN Document Server

    Yoo, Y G; Kim, W T; Jang, P W; Kim, C S

    2000-01-01

    The magnetic properties of Fe-Si sub 3 N sub x thin films fabricated by a co-sputtering technique were studied by electrical resistivity, magnetometry, and Moessbauer spectroscopy as a function of the Ar pressure. As the Ar pressure increased, the electrical resistivity increased while the saturation magnetization decreased. The temperature and the field dependences of the magnetization of the co-sputtered thin films can be explained by a mixture of ferromagnetic and paramagnetic components. also, the Moessbauer spectra showed good agreement with the magnetization results; the ferromagnetic contribution to the magnetization decreased with increasing Ar pressure.

  17. Room-Temperature Anisotropic Ferromagnetism in Fe-Doped In2O3 Heteroepitaxial Films

    Institute of Scientific and Technical Information of China (English)

    XING Peng-Fei; CHEN Yan-Xue; TANG Min-Jian; YAN Shi-Shen; LIU Guo-Lei; MEI Liang-Mo; JIAO Jun

    2009-01-01

    Fe-doped In_2O_3 films are grown epitaxially on YSZ (100) substrates by pulsed laser deposition. The in-situ reflection high-energy electron diffraction, the atomic force microscopy, and the x-ray diffraction patterns show that the films have a well defined cubic structure epitaxially oriented in the (100) direction. Room temperature ferromagnetism is observed by an alternating gradient magnetometer. Strong perpendicular magnetic anisotropy with a remnant magnetization ratio of 0.83 and a coercivity of 2.S kOe is revealed. Both the structural and the magnetic measurements suggest that this ferromagnetism is an intrinsic property deriving from the spin-orbit coupling between the diluted Fe atoms.

  18. Properties of NiZnO Thin Films with Different Amounts of Al Doping

    Science.gov (United States)

    Kayani, Zohra N.; Fatima, Gulnaz; Zulfiqar, Bareera; Riaz, Saira; Naseem, Shahzad

    2017-10-01

    Transparent Al-doped NiZnO thin films have been fabricated by sol-gel dip coating and investigated using scanning electron microscopy, x-ray diffraction analysis, ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry, vibrating-sample magnetometry, and Fourier-transform infrared spectroscopy. The Al-doped NiZnO films consisted of ZnO hexagonal and α-Al2O3 rhombohedral phases as the Al incorporation was gradually increased from 1 at.% up to 3 at.%. A decrease in the optical bandgap from 3.90 eV to 3.09 eV was observed for films grown with Al content of 1 at.% to 2.5 at.%, but at 3 at.% Al, the bandgap increased to 3.87 eV. Optical transmittance of 96% was achieved for these transparent oxide films. Study of their magnetic properties revealed that increasing Al percentage resulted in enhanced ferromagnetism. The saturated magnetization increased with increasing Al percentage. The ferromagnetic properties of Al-doped NiZnO are mediated by electrons. The surface of the deposited thin films consisted of nanowires, nanorods, porous surface, and grains.

  19. Electric polarization in bi-layered ferromagnetic film with combined magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Gareeva, Z.V., E-mail: gzv@anrb.ru [Institute of Molecule and Crystal Physics, Academy of Sciences, 151, prospect Octobrya, Ufa 450075 (Russian Federation); Doroshenko, R.A. [Institute of Molecule and Crystal Physics, Academy of Sciences, 151, prospect Octobrya, Ufa 450075 (Russian Federation); Mazhitova, F.A. [Bashkir State University, 32 Z. Validi str., Ufa 450076 (Russian Federation); Shulga, N.V. [Institute of Molecule and Crystal Physics, Academy of Sciences, 151, prospect Octobrya, Ufa 450075 (Russian Federation)

    2015-07-01

    Magnetoelectric phenomena become one of the most attractive fields of magnetism. One of discussable items is inhomogeneous magnetoelectricity leading to appearance of electric polarization of magnetic domain walls, improper polarization of multiferroics etc. In our article we attract attention to the modulation of electric polarization by magnetic inhomogeneity in exchange coupled ferromagnetic film whose layers differ by magnetic anisotropy. Our goal is to explore the influence of combined magnetic anisotropy (especially its cubic component) on the behavior of electric polarization of bi-layered film placed in magnetic field. We perform theoretical analysis in a frame of phenomenological modeling of spins structures considering two geometries of magnetic field (magnetic field oriented perpendicular to a film plane and magnetic field oriented in a film plane along “hard magnetization” axis). Our results show that the presence of cubic magnetic anisotropy (K{sub c}<0) in the layers allocates the planes of magnetic inhomogeneities and correspondingly the directions of electric polarization. We demonstrate that magnetic field applied along the “hard magnetization” axis leads to the rotation of electric polarization in the 45° range and magnetic field applied along normal to a film influences the magnitude of electric polarization leading to the lowering of polarization after attaining the maximum value. - Highlights: • Magnetic inhomogeneity in bi-layered ferromagnetic film generates electric polarization. • Cubic magnetic anisotropy allocates the direction of electric polarization. • Magnetic field applied along “hard magnetization” axis rotates electric polarization.

  20. Asymmetric magnetoimpedance in two-phase ferromagnetic film structures

    Science.gov (United States)

    Antonov, A. S.; Buznikov, N. A.

    2016-08-01

    The magnetoimpedance of a film trilayer consisting of magnetically soft and magnetically hard films separated by a high-conductivity nonmagnetic spacer is theoretically investigated. A model for describing the dependences of the sample impedance on the external magnetic field and frequency is proposed, which is based on simultaneous solution of the linearized Maxwell and Landau-Lifshitz equations and takes into account the magnetostatic interaction between the magnetic layers. It is demonstrated that the magnetostatic interaction changes the distribution of magnetization of the magnetically soft film and leads to the occurrence of asymmetry in the field dependence of the impedance. The results obtained can be used in the development of weak magnetic field sensors.

  1. Electrochromism in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  2. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  3. Magnetic Thin Films of Inorganic Nanosheets

    Science.gov (United States)

    Yamamoto, Takashi; Namba, Hiroaki; Einaga, Yasuaki

    2012-02-01

    Molecule-based magnets have been fascinating materials because of the potential applications in information storage, electronic and spintronic devices. However, such applications would require arraying the active materials on a substrate or interfacing with other components. Here, we focus on fabricating multi-functional magnetic films using inorganic nanosheets as a building block. The thin films could be prepared by the modified Langmuir-Blodgett, LB, technique or the layer-by-layer, LbL, method, which are representative wet-processings for film preparation. As the magnetic LB film, we chose semiconductive titania nanosheets and magnetic Prussian Blue. Upon band gap excitation of titania nanosheets, electron injection into Prussian Blue was achieved with scavenging interlayer water molecules, leading to photoreduction to Prussian White. As the magnetic LbL film, we chose magnetic layered double hydroxide, LDH, nanosheets and non-magnetic smectite nanosheets. In powdered LDH, a coercivity increased with expanding the interlayer spacing. On the other hand, despite the larger interlayer spacing for the LbL film, a coercivity was less than that of the comparative powdered LDH. It is indicated LDH nanosheets are integrated in an anisotropic manner in the LbL films.

  4. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...... is that the experimentally inaccessible out-of-plane material properties are determined by fitting the model predictions to the measured nonlinear behavior of the film. Creep tests, uniaxial tension tests, and biaxial bubble tests are used to determine the material parameters. The model has been validated experimentally...

  5. INVESTIGATION OF PHOTOELECTROCHROMIC THIN FILM AND DEVICE

    Institute of Scientific and Technical Information of China (English)

    M.J. Chen; H. Shen

    2005-01-01

    Photoelectrochromic device is a combination of dye-sensitized solar cells and electrochromic WO3 layers. Ectrochroelmic WO3 layer and TiO2 layer had been prepared by the sol-gel process, then be assembled to pohotoelectrochromic device. The effects of heating temperature on photoelectrochromic were investigated. The results showed that thin films prepared by dip-coating and spin-coating had good film quality and the device made by the method mentioned in the paper had good photoelectrochromie properties.

  6. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2016-01-04

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  7. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    Science.gov (United States)

    Li, Xiaopu; Ma, Chung T.; Lu, Jiwei; Devaraj, Arun; Spurgeon, Steven R.; Comes, Ryan B.; Poon, S. Joseph

    2016-01-01

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  8. Tuning of Transport and Magnetic Properties in Epitaxial LaMnO3+δ Thin Films

    Directory of Open Access Journals (Sweden)

    J. Chen

    2014-01-01

    Full Text Available The effect of compressive strain on the transport and magnetic properties of epitaxial LaMnO3+δ thin films has been investigated. It is found that the transport and magnetic properties of the LaMnO3+δ thin films grown on the LaAlO3 substrates can be tuned by the compressive strain through varying film thickness. And the insulator-metal transition, charge/orbital ordering transition, and paramagnetic-ferromagnetic transition are suppressed by the compressive strain. Consequently, the related electronic and magnetic transition temperatures decrease with an increase in the compressive strain. The present results can be explained by the strain-controlled lattice deformation and the consequent orbital occupation. It indicates that the lattice degree of freedom is crucial for understanding the transport and magnetic properties of the strongly correlated LaMnO3+δ.

  9. Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

    KAUST Repository

    Baras, Abdulaziz

    2011-07-01

    Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

  10. Colossal magnetoresistance and phase separation in manganite thin films

    Science.gov (United States)

    Srivastava, M. K.; Agarwal, V.; Kaur, A.; Singh, H. K.

    2017-05-01

    In the present work, polycrystalline Sm0.55Sr0.45MnO3 thin films were prepared on LSAT (001) single crystal substrates by ultrasonic nebulized spray pyrolysis technique. The X-ray diffraction θ-2θ scan reveals that these films (i) have very good crystallinity, (ii) are oriented along out-of-plane c-direction, and (iii) are under small tensile strain. The impact of oxygen vacancy results into (i) higher value of paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature, i.e., TC/TIM, (ii) sharper PMI-FMM transition, (iii) higher value of magnetization and magnetic saturation moment, and (iv) higher value of magnetoresistance (˜99%). We suggest here that oxygen vacancy favors FMM phase while oxygen vacancy annihilation leads to antiferromagnetic-charge ordered insulator (AFM-COI) phase. The observed results have been explained in context of phase separation (PS) caused by different fractions of the competing FMM and AFM-COI phases.

  11. Electrostatic Discharge Effects on Thin Film Resistors

    Science.gov (United States)

    Sampson, Michael J.; Hull, Scott M.

    1999-01-01

    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  12. Triboelectric Nanogenerator Using Lithium Niobate Thin Film

    Science.gov (United States)

    Geng, Juan; Zhang, Xinzheng; Kong, Yongfa; Xu, Jingjun

    2017-06-01

    We present a triboelectric nanogenerator (TENG) using a lithium niobate thin film, as one of the triboelectric pairs which was grown on a silicon substrate by laser molecule beam epitaxy (LMBE). The designed TENG has the advantages of simple structure, easy fabrication, small size (1.1*1.0*0.15 cm3). An open-circuit voltage of 136 V and a short-circuit current of 8.40 μA have been achieved. The maximum output power is 307.5μW under the load resistance of 10MΩ. This is the first time to use lithium niobate thin film as one of the friction pair, which may make it possible to expand the application of triboelectric nanogenerator to optical field.

  13. Thin Films of Polypyrrole on Particulate Aluminum

    Science.gov (United States)

    2009-02-01

    C H R I S T O P H E R V E T T E R , X I A O N I N G Q I , S U B R A M A N Y A M V . K A S I S O M A Y A J U L A , A N D Thin Films of Polypyrrole on...1. REPORT DATE FEB 2009 2. REPORT TYPE 3. DATES COVERED 00-00-2009 to 00-00-2009 4. TITLE AND SUBTITLE Thin Films of Polypyrrole on...layer 3 Why Polypyrrole /Flake? Polypyrrole  Poor mechanical properties  Poor adhesion  Solubility issues  Continuous layer needed 4 Polypyrrole Coated

  14. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. [ed.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  15. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. (ed.)

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  16. Silver nanowire composite thin films as transparent electrodes for Cu(In,Ga)Se₂/ZnS thin film solar cells.

    Science.gov (United States)

    Tan, Xiao-Hui; Chen, Yu; Liu, Ye-Xiang

    2014-05-20

    Solution processed silver nanowire indium-tin oxide nanoparticle (AgNW-ITONP) composite thin films were successfully applied as the transparent electrodes for Cu(In,Ga)Se₂ (CIGS) thin film solar cells with ZnS buffer layers. Properties of the AgNW-ITONP thin film and its effects on performance of CIGS/ZnS thin film solar cells were studied. Compared with the traditional sputtered ITO electrodes, the AgNW-ITONP thin films show comparable optical transmittance and electrical conductivity. Furthermore, the AgNW-ITONP thin film causes no physical damage to the adjacent surface layer and does not need high temperature annealing, which makes it very suitable to use as transparent conductive layers for heat or sputtering damage-sensitive optoelectronic devices. By using AgNW-ITONP electrodes, the required thickness of the ZnS buffer layers for CIGS thin film solar cells was greatly decreased.

  17. Rechargeable thin-film lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6-{mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin-film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin-film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin-film lithium batteries.

  18. Incoherent and Laser Photodeposition on Thin Films.

    Science.gov (United States)

    1980-09-01

    mixing system. Both a carbon dioxide and dry chemical fire extinguisher were on hand in case a fire was initiated by the compounds. The dimethvlzinc was...summarizes three months of experimental effort devoted toward the production of thin films by the photodissociation of organometallic molecules containing the...that the threshold wavelength for the photodissociation of both Zn- 0 and Se- (CH3 )2 was approximately 2420A. Consequently, these laser photodeposition

  19. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  20. Surface morphology of thin films polyoxadiazoles

    OpenAIRE

    J. Weszka; M.M. Szindler; M. Chwastek-Ogierman; BRUMA M.; P. Jarka; Tomiczek, B.

    2011-01-01

    urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used....

  1. Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shah, Jyoti, E-mail: shah.jyoti1@gmail.com; Kotnala, Ravinder K., E-mail: rkkotnala@nplindia.org, E-mail: rkkotnala@gmail.com [Multiferroic and Magnetics Laboratory, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India)

    2014-04-07

    Thin film of BaTiO{sub 3} doped with 0.1 at. % Cr (Cr:BTO) has been prepared by pulsed laser deposition technique. Film was deposited on Pt/SrTiO{sub 3} substrate at 500 °C in 50 mTorr Oxygen gas pressure using KrF (298 nm) laser. Polycrystalline growth of single phase Cr:BTO thin film has been confirmed by grazing angle X-ray diffraction. Cr:BTO film exhibited remnant polarization 6.4 μC/cm{sup 2} and 0.79 MV/cm coercivity. Magnetization measurement of Cr:BTO film showed magnetic moment 12 emu/cc. Formation of weakly magnetic domains has been captured by magnetic force microscopy. Theoretical impedance equation fitted to experimental data in Cole-Cole plot for thin film in presence of transverse magnetic field resolved the increase in grain capacitance from 4.58 × 10{sup −12} to 5.4 × 10{sup −11} F. Film exhibited high value 137 mV/cm-Oe magneto-electric (ME) coupling coefficient at room temperature. The high value of ME coupling obtained can reduce the typical processing steps involved in multilayer deposition to obtain multiferrocity in thin film. Barium titanate being best ferroelectric material has been tailored to be multiferroic by non ferromagnetic element, Cr, doping in thin film form opens an avenue for more stable and reliable spintronic material for low power magnetoelectric random excess memory applications.

  2. Additives to silane for thin film silicon photovoltaic devices

    Science.gov (United States)

    Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

    2013-09-17

    Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

  3. Design and characterization of thin film microcoolers

    Science.gov (United States)

    LaBounty, Chris; Shakouri, Ali; Bowers, John E.

    2001-04-01

    Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 °C at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20-30 °C degrees centigrade cooling with cooling power densities of several 1000 W/cm2.

  4. Uniaxial ferromagnetic film in magnetic field perpendicular to the easy axis

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1987-08-01

    The spin model of single domain ferromagnetic film is considered. Only the nearest-neighbor interactions are taken into account. The interactions depend on distances from surfaces. The external magnetic field is applied perpendicular to the easy axis lying in the plane of the film. The thermodynamic behaviour of the model is studied near the second-order ferro-paramagnetic phase transition for the component of the magnetization in the direction of the easy axis. The molecular-field theory is used. The phase diagram and profiles of the order parameter are obtained. Different feasible investigations of the phase transition are compared.

  5. A Langmuir Blodgett film presenting a ferromagnetic state below 25 K

    Science.gov (United States)

    Lafuente, C.; Mingotaud, C.; Delhaes, P.

    1999-03-01

    A positively charged monolayer spread on a sub-phase containing copper hexacyanoferrate leads to hybrid inorganic-organic LB films. Those multilayers present a spin ordering below 25 K. The Curie temperature of the LB films is found to be independent of the multilayer thickness. Their magnetization is clearly proportional to the number of transferred layers, demonstrating that the deposition process is perfectly regular. These results show that a bulk ferromagnetic behavior can be observed in this hybrid material, even if the distance between magnetic layers is considered as large.

  6. Titanium diffusion in gold thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, William E. [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States); Gregori, Giuliano, E-mail: g.gregori@fkf.mpg.d [California NanoSystems Institute, University of California, Santa Barbara, CA 93106-5050 (United States); Mates, Thomas [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States)

    2010-03-01

    In the present study, diffusion phenomena in titanium/gold (Ti/Au) thin films occurring at temperatures ranging between 200 and 400 {sup o}C are investigated. The motivation is twofold: the first objective is to characterize Ti diffusion into Au layer as an effect of different heat-treatments. The second goal is to prove that the implementation of a thin titanium nitride (TiN) layer between Ti and Au can remarkably reduce Ti diffusion. It is observed that Ti atoms can fully diffuse through polycrystalline Au thin films (260 nm thick) already at temperatures as a low as 250 {sup o}C. Starting from secondary ion mass spectroscopy data, the overall diffusion activation energy {Delta}E = 0.66 eV and the corresponding pre-exponential factor D{sub 0} = 5 x 10{sup -11} cm{sup 2}/s are determined. As for the grain boundary diffusivity, both the activation energy range 0.54 < {Delta}E{sub gb} < 0.66 eV and the pre-exponential factor s{sub 0}D{sub gb0} = 1.14 x 10{sup -8} cm{sup 2}/s are obtained. Finally, it is observed that the insertion of a thin TiN layer (40 nm) between gold and titanium acts as an effective diffusion barrier up to 400 {sup o}C.

  7. Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

    Science.gov (United States)

    Yu, Ying; Zhan, Qingfeng; Wei, Jinwu; Wang, Jianbo; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Xie, Shuhong; Wang, Baomin; Li, Run-Wei

    2015-04-01

    Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

  8. Static and high frequency magnetic properties of FeGa thin films deposited on convex flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ying [Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China); Zhan, Qingfeng, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn; Dai, Guohong; Zuo, Zhenghu; Zhang, Xiaoshan; Liu, Yiwei; Yang, Huali; Zhang, Yao; Wang, Baomin; Li, Run-Wei, E-mail: zhanqf@nimte.ac.cn, E-mail: runweili@nimte.ac.cn [Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wei, Jinwu; Wang, Jianbo [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Xie, Shuhong [Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2015-04-20

    Magnetostrictive FeGa thin films were deposited on the bowed flexible polyethylene terephthalate (PET) substrates, which were fixed on the convex mold. A compressive stress was induced in FeGa films when the PET substrates were shaped from convex to flat. Due to the effect of magnetostriction, FeGa films exhibit an obvious in-plane uniaxial magnetic anisotropy which could be enhanced by increasing the applied pre-strains on the substrates during growth. Consequently, the ferromagnetic resonance frequency of the films was significantly increased, but the corresponding initial permeability was decreased. Moreover, the films with pre-strains less than 0.78% exhibit a working bandwidth of microwave absorption about 2 GHz. Our investigations demonstrated a convenient method via the pre-strained substrates to tune the high frequency properties of magnetic thin films which could be applied in flexible microwave devices.

  9. Magnetism switching and band-gap narrowing in Ni-doped PbTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Wenliang; Yu, Lu; Yang, Pingxiong, E-mail: pxyang@ee.ecnu.edu.cn; Chu, Junhao [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Deng, Hongmei [Instrumental Analysis and Research Center, Institute of Materials, Shanghai University, 99 Shangda Road, Shanghai 200444 (China)

    2015-05-21

    Ions doping-driven structural phase transition accompanied by magnetism switching and band-gap narrowing effects has been observed in PbTi{sub 1−x}Ni{sub x}O{sub 3−δ} (xPTNO, x = 0.00, 0.06, and 0.33) thin films. With the increase of x, the xPTNO thin films exhibit not only a phase transition from the pseudotetragonal structure to a centrosymmetric cubic structure but also a drastic decrease of grain size. Moreover, the as-grown Ni-doped PbTiO{sub 3} (PTO) thin films show obvious room-temperature ferromagnetism and an increased saturation magnetization with increasing the Ni content, in contrast to undoped PTO, which shows diamagnetism. A bound magnetic polaron model was proposed to understand the observed ferromagnetic behavior of PTO-derived perovskite thin films. Furthermore, the 0.33PTNO thin film presents a narrowed band-gap, much smaller than that of PTO, which is attributed to new states of both the highest occupied molecular orbital and the lowest unoccupied molecular orbital in an electronic structure with the presence of Ni. These findings may open up a route to explore promising perovskite oxides as candidate materials for use in multiferroics and solar-energy devices.

  10. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  11. Preparation and properties of antimony thin film anode materials

    Institute of Scientific and Technical Information of China (English)

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  12. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  13. Optical properties of thin polymer films

    Science.gov (United States)

    Kasarova, Stefka N.; Sultanova, Nina G.; Petrova, Tzveta; Dragostinova, Violeta; Nikolov, Ivan

    2009-10-01

    In this report three types of optical polymer thin films deposited on glass substrates are investigated. Transmission spectra of the polymer samples are obtained in the range from 400 nm to 1500 nm. A laser microrefractometer has been used to measure the refractive indices of the examined materials at 406, 656, 910 and 1320 nm. Dispersion properties of the polymer films are analyzed on the base of the Cauchy-Schott's and Sellmeier`s approximations. Dispersion coefficients are calculated and dispersion charts in the visible and near infrared spectral regions are presented and compared. Abbe numbers of mean and partial dispersion of the polymer films are obtained. Calculation of refractive indices at many laser emission wavelengths in the considered spectral range is accomplished.

  14. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  15. Inorganic and Organic Solution-Processed Thin Film Devices

    Institute of Scientific and Technical Information of China (English)

    Morteza Eslamian

    2017-01-01

    Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging tech-nologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique prop-erties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

  16. Magnetic Properties of Heisenberg Thin Films in an External Field

    Institute of Scientific and Technical Information of China (English)

    CHEN Hong; ZHANG Jing

    2004-01-01

    The magnetic properties of Heisenberg ferromagnetic films in an external magnetic field are investigated by means of the variational cumulant expansion (VCE). The magnetization can be in principle calculated analytically as the function of the temperature and the number of atomic layers in the film to an arbitrary order of accuracy in the VCE. We calculate the spontaneous magnetization and coercivity to the third order for spin-1/2 Heisenberg films with simple cubic lattices by using a graphic technique.

  17. Tuning the magnetic properties of Fe50-xMnxPt50 thin films

    Science.gov (United States)

    Manoharan, Ezhil A.; Mankey, Gary; Hong, Yang-Ki

    2017-09-01

    The magnetic and structural properties of highly ordered (S ∼ 0.82) epitaxial Fe50-xMnxPt50 thin films were investigated. L10 Fe50-xMnxPt50 (x = 0, 6, 9, 12 and 15) thin films with a constant thickness of 45 nm were prepared by co-sputtering Fe50Pt50 and Mn50Pt50 on to MgO (100) single crystal substrate. We find a significant increase in the coercivity for FeMnPt thin films. We have shown that this increase coincides with a tetragonal distortion, while a recent first principles study of Mn doped FePt showed the sub lattice ordering of ferromagnetically aligned Mn atoms would lead to increase in magnetic anisotropy in the FeMnPt ternary alloy system with fixed Pt concentration. At x = 12 the coercivity has increased by 46.4% relative to that of Fe50Pt50 (x = 0). We attribute the increase in coercivity to the tetragonal distortion as the experimentally determined c/a ratio is larger than the expected c/a ratio for ferromagnetically ordered Mn atoms in the sublattice at the concentration x = 12. High temperature deposition and high temperature annealing was applied to achieve large coercivity in Mn doped FePt as these process lead to the observed tetragonal distortion.

  18. Annealed SnO{sub 2} thin films: Structural, electrical and their magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Mehraj, Sumaira, E-mail: sumairamehraj07@gmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh 202002 (India); Ansari, M. Shahnawaze, E-mail: shah.csengg@gmail.com [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alimuddin [Department of Applied Physics, Aligarh Muslim University, Aligarh 202002 (India)

    2015-08-31

    SnO{sub 2} thin films of ~ 150 nm thicknesses were deposited on quartz substrate by pulse laser deposition technique and annealed at 600–900 °C for 1 h with a variation of 100 °C per sample. The X-ray diffraction patterns show that as deposited SnO{sub 2} thin film was completely amorphous while annealed SnO{sub 2} thin films were randomly oriented, polycrystalline in nature and correspond to the rutile phase. The average crystallite size estimated using Scherrer and Williamson–Hall equations was found to increase with annealing temperature. In addition to the three fundamental Raman peaks at 473 cm{sup −1}, 627 cm{sup −1} and 766 cm{sup −1} corresponding to the tetragonal rutile phase of SnO{sub 2}, two IR active Raman bands and one Raman forbidden mode were also observed at 500 cm{sup −1}, 690 cm{sup −1} and 544 cm{sup −1} respectively. The dc resistivity measurements in the temperature range of 297–400 K show semiconducting behavior of all the annealed thin films. Room temperature dielectric properties of all the samples show dispersion which is explained in the light of Koop's theory based on Maxwell–Wagner two layer models. The dielectric parameters: real part of dielectric constant, dielectric loss and ac conductivity show their maximum value for SnO{sub 2} film sample annealed at 600 °C. The dielectric loss shows anomalous behavior and exhibits relaxation peaks (Debye peaks) at lower and middle frequencies. Complex impedance plots (Nyquist plots) for annealed SnO{sub 2} thin films show two well-resolved semicircles corresponding to two different electrical transport mechanisms which stand for grain and grain boundary. It is observed that the contribution of grains in the conduction process starts dominating over the grain boundary with the increase in annealing temperature. From a magnetic hysteresis loop, it is clear that all the single phase SnO{sub 2} thin films annealed at different temperatures are ferromagnetic at room

  19. Band gap widening and d{sup 0} ferromagnetism in epitaxial Li-doped SnO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jianchun; Zhou, Wei; Wu, Ping, E-mail: Pingwu@tju.edu.cnpingwu

    2014-09-30

    Highlights: • The band gap widening is observed in Li-doped SnO{sub 2} films. • All the films are ferromagnetic and the largest saturation magnetization of 7.9 emu/cm{sup 3} has been observed in Sn{sub 0.88}Mg{sub 0.12}O{sub 2}film. • The holes induced by Li replacing Sn enhance the magnetism. • The p–p interaction between the 2p states of the O atom is responsible for the long-range ferromagnetic order. - Abstract: Epitaxial grown Li doped SnO{sub 2} films with room temperature d{sup 0} ferromagnetism were prepared by radio frequency magnetron sputtering. X-ray diffraction and X-ray photoelectron spectroscopy give clear evidence of Li presence at both substitutional and interstitial sites. A conversion of conductivity from n-type to p-type was observed as the Li concentration reaches 6 at.%. The band gap of films increased non-montonically with the Li concentration. All the films are ferromagnetic, and the largest saturation magnetization of 7.9 emu/cm{sup 3} is observed in the Sn{sub 0.88}Li{sub 0.12}O{sub 2} film which has the widest band gap. The consistency of the variation between the magnetic, structural, electrical and optical properties indicates that holes introduced by Li substitutions can enhance the ferromagnetism though p–p interaction.

  20. Magneto-optic properties and optical parameter of thin MnCo films

    Directory of Open Access Journals (Sweden)

    E Attaran Kakhki

    2009-09-01

    Full Text Available Having precise hysterics loop of thin ferroelectric and ferromagnetic layers for optical switching and optical storages are important. A hysterieses loop can be achieved from a phenomenon call the magneto-optic effect. The magneto-optic effect is the rotation of a linear polarized electromagnetic wave propagated through a ferromagnetic medium. When light is transmitted through a layer of magnetic material the result is called the Faraday effects and in the reflection mode Kerr effect. In the present work we prepared a thin layer of MnxCo3-xO4 (0≤ x ≤ 1 and a binary form of MnO/Co3O4 by the spray pyrolysis method. The films have been characterized by a special set up of magneto-optic hysterics loop plotter containing a polarized He- Ne laser beam and a special electronic circuit. Faraday rotation were measured for these films by hysterics loop plotter and their optical properties were also obtained by spatial software designed for this purpose according to Swane Poel theoretical method. The measurements show that the samples at diluted Mn study has are ferromagnetic and the magneto-optic rotation show a good enhance respect to the single Co layers. Also, the study has shown that the MnCo oxide layer have two different energy gaps and by increasing of Mn this energy decreases and fall to 0.13 eV.