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Sample records for ferroelectric bi-layered thin

  1. Microstructure and mechanical behavior of a shape memory Ni-Ti bi-layer thin film

    Energy Technology Data Exchange (ETDEWEB)

    Mohri, Maryam [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Nili-Ahmadabadi, Mahmoud, E-mail: nili@ut.ac.ir [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Center of Excellence for High Performance Materials, University of Tehran, Tehran (Iran, Islamic Republic of); Ivanisenko, Julia [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Schwaiger, Ruth [Karlsruhe Institute of Technology, Institute for Applied Materials, 76021 Karlsruhe (Germany); Hahn, Horst; Chakravadhanula, Venkata Sai Kiran [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany)

    2015-05-29

    Two different single-layers and a bi-layer Ni-Ti thin films with chemical compositions of Ni{sub 45}Ti{sub 50}Cu{sub 5}, Ni{sub 50.8}Ti{sub 49.2} and Ni{sub 50.8}Ti{sub 49.2}/Ni{sub 45}Ti{sub 50}Cu{sub 5} (numbers indicate at.%) determined by energy dispersive X-ray spectroscopy were deposited on Si (111) substrates using DC magnetron sputtering. The structures, surface morphology and transformation temperatures of annealed thin films at 500 °C for 15 min and 1 h were studied using grazing incidence X-ray diffraction, transmission electron microscopy (TEM), atomic force microscopy and differential scanning calorimetry (DSC), respectively. Nanoindentation was used to characterize the mechanical properties. The DSC and X-ray diffraction results indicated the austenitic structure of the Ni{sub 50.8}Ti{sub 49.2} and martensitic structure of the Ni{sub 45}Ti{sub 50}Cu{sub 5} thin films while the bi-layer was composed of austenitic and martensitic thin films. TEM study revealed that copper encourages crystallization in the bi-layer such that crystal structure containing nano-precipitates in the Ni{sub 45}Ti{sub 50}Cu{sub 5} layer was detected after 15 min annealing while the Ni{sub 50.8}Ti{sub 49.2} layer crystallized after 60 min at 500 °C. Furthermore, after annealing at 500 °C for 15 min, a precipitate free zone and thin layer amorphous were observed closely to the interface in the top layer. The bi-layer was completely crystallized at 500 °C for 1 h and the orientation of the Ni-rich precipitates indicated a stress gradient in the bi-layer. The bi-layer thin film showed different transformation temperatures and mechanical behavior from the single-layers. The developed bi-layer has different phase transformation temperatures, the higher temperatures of shape memory effect and lower temperature of pseudo-elastic behavior compared to the single-layers. Also, the bi-layer thin film exhibited a combined pseudo-elastic behavior and shape memory effect with a reduced

  2. Crystallization study of amorphous sputtered NiTi bi-layer thin film

    Energy Technology Data Exchange (ETDEWEB)

    Mohri, Maryam, E-mail: mmohri@ut.ac.ir [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Nili-Ahmadabadi, Mahmoud [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Center of Excellence for High Performance Materials, University of Tehran, Tehran (Iran, Islamic Republic of); Chakravadhanula, Venkata Sai Kiran [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany)

    2015-05-15

    The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure of the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni{sub 45}TiCu{sub 5} layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively.

  3. Ferroelectric Thin Film Development

    National Research Council Canada - National Science Library

    Harman, Taran V

    2003-01-01

    The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate...

  4. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

    Energy Technology Data Exchange (ETDEWEB)

    Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

    2012-10-15

    We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric

  6. Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

    Science.gov (United States)

    Borthakur, Tribeni; Sarma, Ranjit

    2017-05-01

    Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

  7. Control of the optical and crystalline properties of TiO2 in visible-light active TiO2/TiN bi-layer thin-film stacks

    International Nuclear Information System (INIS)

    Smith, Wilson; Fakhouri, Houssam; Pulpytel, Jerome; Arefi-Khonsari, Farzaneh

    2012-01-01

    Multi-layered thin films of TiO 2 and TiN were created by rf reactive magnetron sputtering, and their crystalline, optical, and photoelectrochemical properties were measured. The overall composition of the films (TiO 2 -to-TiN ratio) was kept constant with the height of each film. The number of layers and thickness of each layer was controlled to create bi-layer thin films that were composed of: 9 bi-layers, 18 bi-layers, 27 bi-layers, 36 bi-layers, and 45 bi-layers. XRD patterns were observed for each film after annealing to measure the grain size and composition of anatase and rutile as a function of temperature. It was found that the phase-transition temperature is able to be substantially controlled (between 550 deg. C and 850 deg. C) for the anatase to rutile transition by varying the number of layers/thickness of each layer. In addition, bi-layer stacking significantly affected the film's optical properties by lowering the bandgap into the visible-light region, and also showed up to three times the improvement in photoelectrochemical performance under uv and visible irradiation. Overall, bi-layer stacking of TiO 2 /TiN films has shown a unique and highly desirable control over several important physical characteristics that can be beneficial for many applications, such as high-temperature sensors and optoelectronic devices.

  8. Fabrication of bi-layer graphene and theoretical simulation for its possible application in thin film solar cell.

    Science.gov (United States)

    Behura, Sanjay K; Mahala, Pramila; Nayak, Sasmita; Yang, Qiaoqin; Mukhopadhyay, Indrajit; Janil, Omkar

    2014-04-01

    High quality graphene film is fabricated using mechanical exfoliation of highly-oriented pyrolytic graphite. The graphene films on glass substrates are characterized using field-emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy, UV-vis spectroscopy and Fourier transform infrared spectroscopy. A very high intensity ratio of 2D to G-band (to approximately 1.67) and narrow 2D-band full-width at half maximum (to approximately 40 cm(-1)) correspond to the bi-layer graphene formation. The bi-layer graphene/p-GaN/n-InGaN/n-GaN/GaN/sAl2O3 system is studied theoretically using TCAD Silvaco software, in which the properties of exfoliated bi-layer graphene are used as transparent and conductive film, and the device exhibits an efficiency of 15.24% compared to 13.63% for ITO/p-GaN/n-InGaN/n-GaN/GaN/Al2O3 system.

  9. Nanoscale phenomena in ferroelectric thin films

    Science.gov (United States)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  10. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  11. Ferroelectricity in Sodium Nitrite Thin Films | Britwum | Journal of the ...

    African Journals Online (AJOL)

    Investigations have been conducted on the ferroelectric property of thin films of NaNO2. The thin films were prepared with the dip coating technique. The phase transition was investigated by observing the change in the dielectric constant with temperature change. The presence of ferro-electricity was investigated with a ...

  12. Functional Properties of Polydomain Ferroelectric Oxide Thin Films

    NARCIS (Netherlands)

    Houwman, Evert Pieter; Vergeer, Kurt; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Nishikawa, H.; Iwata, N.; Endo, T.; Takamura, Y.; Lee, G-H.; Mele, P.

    2017-01-01

    The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally, instead of the two-domain structure

  13. Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors.

    Science.gov (United States)

    Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

    2016-02-25

    In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al₂O₃ and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

  14. Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

    Science.gov (United States)

    Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

    2018-04-01

    In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

  15. Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS-Bi2S3 thin films prepared by solution growth technique at room temperature

    Science.gov (United States)

    Shaikh, Shaheed U.; Siddiqui, Farha Y.; Desale, Deepali J.; Ghule, Anil V.; Singh, Fouran; Kulriya, Pawan K.; Sharma, Ramphal

    2015-01-01

    CdS-Bi2S3 bi-layer thin films have been deposited by chemical bath deposition method on Indium Tin Oxide glass substrate at room temperature. The as-deposited thin films were annealed at 250 °C in an air atmosphere for 1 h. An air annealed thin film was irradiated using Au9+ ions with the energy of 120 MeV at fluence 5×1012 ions/cm2 using tandem pelletron accelerator. The irradiation induced modifications were studied using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Raman spectroscopy, UV spectroscopy and I-V characteristics. XRD study reveals that the as-deposited thin films were nanocrystalline in nature. The decrease in crystallite size, increase in energy band gap and resistivity were observed after irradiation. Results are explained on the basis of energy deposited by the electronic loss after irradiation. The comparative results of as-deposited, air annealed and irradiated CdS-Bi2S3 bi-layer thin films are presented.

  16. Performance of thin-film ferroelectric capacitors for EMC decoupling.

    Science.gov (United States)

    Li, Huadong; Subramanyam, Guru

    2008-12-01

    This paper studied the effects of thin-film ferroelectrics as decoupling capacitors for electromagnetic compatibility applications. The impedance and insertion loss of PZT capacitors were measured and compared with the results from commercial off-the-shelf capacitors. An equivalent circuit model was extracted from the experimental results, and a considerable series resistance was found to exist in ferroelectric capacitors. This resistance gives rise to the observed performance difference around series resonance between ferroelectric PZT capacitors and normal capacitors. Measurements on paraelectric (Ba,Sr)TiO(3)-based integrated varactors do not show this significant resistance. Some analyses were made to investigate the mechanisms, and it was found that it can be due to the hysteresis in the ferroelectric thin films.

  17. Giant flexoelectric effect in ferroelectric epitaxial thin films.

    Science.gov (United States)

    Lee, D; Yoon, A; Jang, S Y; Yoon, J-G; Chung, J-S; Kim, M; Scott, J F; Noh, T W

    2011-07-29

    We report on nanoscale strain gradients in ferroelectric HoMnO(3) epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane x-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves. © 2011 American Physical Society

  18. Oxide ferroelectric thin films: synthesis from organometallic compounds and properties

    International Nuclear Information System (INIS)

    Vertoprakhov, Vladimir N; Nikulina, Lyubov' D; Igumenov, Igor K

    2005-01-01

    Chemical methods for the preparation of oxide ferroelectric thin films from organometallic compounds published over the last 10-15 years are considered systematically and generalised. Layers of these films are promising for the creation of non-volatile memory elements and for use in nano- and microelectronic devices.

  19. Ferroelectric thin films for future thermonuclear reactor diagnostic applications

    International Nuclear Information System (INIS)

    Zauls, V.; Kundzins, K.; Aulika, I.; Kundzins, M.; Stenbergs, A.

    2006-01-01

    Full text: General overview of active material selection requirements for use in bolometric radiation diagnostics systems of future nuclear fusion reactors in comparison with our results of ferroelectric material based elements will be presented. Under modulated thermal irradiation bolometric sensitivity with the range of few mili-Kelvin temperature resolution at 0,2 s time response constant has been demonstrated by thin ferroelectric film capacitive sensor model on thick substrate. Sample measurement system has been developed to be compatible with Wheatstone bridge type bolometric heads measurement concept of ASDEX or ToreSupra reactor sites for future tests

  20. Dimensional scaling of perovskite ferroelectric thin films

    Science.gov (United States)

    Keech, Ryan R.

    Dimensional size reduction has been the cornerstone of the exponential improvement in silicon based logic devices for decades. However, fundamental limits in the device physics were reached ˜2003, halting further reductions in clock speed without significant penalties in power consumption. This has motivated the research into next generation transistors and switching devices to reinstate the scaling laws for clock speed. This dissertation aims to support the scaling of devices that are based on ferroelectricity and piezoelectricity and to provide a roadmap for the corresponding materials performance. First, a scalable growth process to obtain highly {001}-oriented lead magnesium niobate - lead titanate (PMN-PT) thin films was developed, motivated by the high piezoelectric responses observed in bulk single crystals. It was found that deposition of a 2-3 nm thick PbO buffer layer on {111} Pt thin film bottom electrodes, prior to chemical solution deposition of PMN-PT reduces the driving force for Pb diffusion from the PMN-PT to the bottom electrode, and facilitates nucleation of {001}-oriented perovskite grains. Energy dispersive spectroscopy demonstrated that up to 10% of the Pb from a PMN-PT precursor solution may diffuse into the bottom electrode. PMN-PT grains with a mixed {101}/{111} orientation in a matrix of Pb-deficient pyrochlore phase were then promoted near the interface. When this is prevented, phase pure films with {001} orientation with Lotgering factors of 0.98-1.0, can be achieved. The resulting films of only 300 nm in thickness exhibit longitudinal effective d33,f coefficients of ˜90 pm/V and strain values of ˜1% prior to breakdown. 300 nm thick epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) blanket thin films were studied for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO3, while

  1. Flexoelectric rotation of polarization in ferroelectric thin films.

    Science.gov (United States)

    Catalan, G; Lubk, A; Vlooswijk, A H G; Snoeck, E; Magen, C; Janssens, A; Rispens, G; Rijnders, G; Blank, D H A; Noheda, B

    2011-10-16

    Strain engineering enables modification of the properties of thin films using the stress from the substrates on which they are grown. Strain may be relaxed, however, and this can also modify the properties thanks to the coupling between strain gradient and polarization known as flexoelectricity. Here we have studied the strain distribution inside epitaxial films of the archetypal ferroelectric PbTiO(3), where the mismatch with the substrate is relaxed through the formation of domains (twins). Synchrotron X-ray diffraction and high-resolution scanning transmission electron microscopy reveal an intricate strain distribution, with gradients in both the vertical and, unexpectedly, the horizontal direction. These gradients generate a horizontal flexoelectricity that forces the spontaneous polarization to rotate away from the normal. Polar rotations are a characteristic of compositionally engineered morphotropic phase boundary ferroelectrics with high piezoelectricity; flexoelectricity provides an alternative route for generating such rotations in standard ferroelectrics using purely physical means.

  2. Stress effects in ferroelectric perovskite thin-films

    Science.gov (United States)

    Zednik, Ricardo Johann

    The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

  3. Modeling Kinetics of Distortion in Porous Bi-layered Structures

    DEFF Research Database (Denmark)

    Tadesse Molla, Tesfaye; Frandsen, Henrik Lund; Bjørk, Rasmus

    2013-01-01

    Shape distortions during constrained sintering experiment of bi-layer porous and dense cerium gadolinium oxide (CGO) structures have been modeled. Technologies like solid oxide fuel cells require co-firing thin layers with different green densities, which often exhibit differential shrinkage...

  4. Flexoelectric control of defect formation in ferroelectric epitaxial thin films.

    Science.gov (United States)

    Lee, Daesu; Jeon, Byung Chul; Yoon, Aram; Shin, Yeong Jae; Lee, Myang Hwan; Song, Tae Kwon; Bu, Sang Don; Kim, Miyoung; Chung, Jin-Seok; Yoon, Jong-Gul; Noh, Tae Won

    2014-08-06

    Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Characterisation of ferroelectric bulk materials and thin films

    CERN Document Server

    Cain, Markys G

    2014-01-01

    This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and - most importantly - relevant and applicable measurement and characterisation methods and models. In the past f

  6. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  7. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  8. Discriminator Stabilized Superconductor/Ferroelectric Thin Film Local Oscillator

    Science.gov (United States)

    Romanofsky, Robert R. (Inventor); Miranda, Felix A. (Inventor)

    2000-01-01

    A tunable local oscillator with a tunable circuit that includes a resonator and a transistor as an active element for oscillation. Tuning of the circuit is achieved with an externally applied dc bias across coupled lines on the resonator. Preferably the resonator is a high temperature superconductor microstrip ring resonator with integral coupled lines formed over a thin film ferroelectric material. A directional coupler samples the output of the oscillator which is fed into a diplexer for determining whether the oscillator is performing at a desired frequency. The high-pass and lowpass outputs of the diplexer are connected to diodes respectively for inputting the sampled signals into a differential operational amplifier. The amplifier compares the sampled signals and emits an output signal if there is a difference between the resonant and crossover frequencies. Based on the sampled signal, a bias supplied to the ring resonator is either increased or decreased for raising or lowering the resonant frequency by decreasing or increasing, respectively, the dielectric constant of the ferroelectric.

  9. PbTiO3-based perovskite ferroelectric and multiferroic thin films.

    Science.gov (United States)

    Wang, Yilin; Zhao, Hanqing; Zhang, Linxing; Chen, Jun; Xing, Xianran

    2017-07-21

    Ferroelectric thin films, especially PbTiO 3 -based perovskite thin films which possess robust spontaneous electrical polarization, are widely investigated and applied in various devices. With the advances in synthesis, characterization and calculation techniques, diverse phenomena and properties are uncovered in ferroelectric thin films. Herein some typical PbTiO 3 -based perovskite thin films through composition control are introduced, which gives more choices with various ferroelectric or other properties. Strain engineering, as well as some other interfacial effects, is also included to show the possibilities of controlling the lattice structure, the electronic structure as well as the domain structure which are closely connected to ferroelectricity. Multiferroic thin films, which could achieve magnetic-field-controlled polarization reversal, expand the novel applications of ferroelectric thin films. Typical and remarkable progress made in the case of multiferroic PbTiO 3 -based perovskite thin films is discussed here. Critical problems such as leakage current and fatigue hinder the practical use of ferroelectric and multiferroic thin films, and are also included in this article.

  10. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  11. Modeling the influence of the seeding layer on the transition behavior of a ferroelectric thin film

    International Nuclear Information System (INIS)

    Oubelkacem, A.; Essaoudi, I.; Ainane, A.; Saber, M.; Dujardin, F.

    2011-01-01

    The transition properties of a ferroelectric thin film with seeding layers were studied using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions. The effect of interaction parameters for the seeding layer on the phase diagram was also examined. We calculated the critical temperature and the polarization of the ferroelectric thin film for different seeding layer structures. We found that the seeding layer can greatly increase the Curie temperature and the polarization.

  12. Quinuclidinium salt ferroelectric thin-film with duodecuple-rotational polarization-directions

    Science.gov (United States)

    You, Yu-Meng; Tang, Yuan-Yuan; Li, Peng-Fei; Zhang, Han-Yue; Zhang, Wan-Ying; Zhang, Yi; Ye, Heng-Yun; Nakamura, Takayoshi; Xiong, Ren-Gen

    2017-04-01

    Ferroelectric thin-films are highly desirable for their applications on energy conversion, data storage and so on. Molecular ferroelectrics had been expected to be a better candidate compared to conventional ferroelectric ceramics, due to its simple and low-cost film-processability. However, most molecular ferroelectrics are mono-polar-axial, and the polar axes of the entire thin-film must be well oriented to a specific direction to realize the macroscopic ferroelectricity. To align the polar axes, an orientation-controlled single-crystalline thin-film growth method must be employed, which is complicated, high-cost and is extremely substrate-dependent. In this work, we discover a new molecular ferroelectric of quinuclidinium periodate, which possesses six-fold rotational polar axes. The multi-axes nature allows the thin-film of quinuclidinium periodate to be simply prepared on various substrates including flexible polymer, transparent glasses and amorphous metal plates, without considering the crystallinity and crystal orientation. With those benefits and excellent ferroelectric properties, quinuclidinium periodate shows great potential in applications like wearable devices, flexible materials, bio-machines and so on.

  13. The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Catalan, G [Institut Mediterrani d' Estudis Avancats (IMEDEA), C/Miquel Marques 21, Esporles 07190, Mallorca (Spain); Sinnamon, L J [Department of Pure and Applied Physics, Queen' s University of Belfast, University Road, Belfast BT7 1NN (United Kingdom); Gregg, J M [Department of Pure and Applied Physics, Queen' s University of Belfast, University Road, Belfast BT7 1NN (United Kingdom)

    2004-04-07

    Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics suggest that strain gradients can affect the polarization and permittivity behaviour of inhomogeneously strained ferroelectrics. Here we present a phenomenological model of the effect of flexoelectricity on the dielectric constant, polarization, Curie temperature (T{sub C}), temperature of maximum dielectric constant (T{sub m}) and temperature of the onset of reversible polarization (T{sub ferro}) for ferroelectric thin films subject to substrate-induced epitaxial strains that are allowed to relax with thickness, and the qualitative and quantitative predictions of the model are compared with experimental results for (Ba{sub 0.5}Sr{sub 0.5})TiO{sub 3} thin films on SrRuO{sub 3} electrodes. It is shown that flexoelectricity can play an important role in decreasing the maximum dielectric constant of ferroelectric thin films under inhomogeneous in-plane strain, regardless of the sign of the strain gradient.

  14. The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin films

    International Nuclear Information System (INIS)

    Catalan, G; Sinnamon, L J; Gregg, J M

    2004-01-01

    Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics suggest that strain gradients can affect the polarization and permittivity behaviour of inhomogeneously strained ferroelectrics. Here we present a phenomenological model of the effect of flexoelectricity on the dielectric constant, polarization, Curie temperature (T C ), temperature of maximum dielectric constant (T m ) and temperature of the onset of reversible polarization (T ferro ) for ferroelectric thin films subject to substrate-induced epitaxial strains that are allowed to relax with thickness, and the qualitative and quantitative predictions of the model are compared with experimental results for (Ba 0.5 Sr 0.5 )TiO 3 thin films on SrRuO 3 electrodes. It is shown that flexoelectricity can play an important role in decreasing the maximum dielectric constant of ferroelectric thin films under inhomogeneous in-plane strain, regardless of the sign of the strain gradient

  15. Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

    Science.gov (United States)

    Haridasan, Vrinda

    Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband

  16. On the structural origins of ferroelectricity in HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sang, Xiahan; Grimley, Everett D.; LeBeau, James M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Schenk, Tony; Schroeder, Uwe [NaMLab gGmbH/TU Dresden, Noethnitzer Str. 64, Dresden D-01187 (Germany)

    2015-04-20

    Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO{sub 2} thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO{sub 2} thin films.

  17. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    Science.gov (United States)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  18. Study of Sb/SnO2 bi-layer films prepared by ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Wang, Chun-Min; Huang, Chun-Chieh; Kuo, Jui-Chao; Huang, Jow-Lay

    2014-01-01

    In the present work, bi-layer thin films of Sb/SnO 2 were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO 2 layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO 2 bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10 −3 Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO 2 structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases

  19. Reduction of leakage currents in ferroelectric thin films by flexoelectricity: a phase field study

    Science.gov (United States)

    Xu, Xiaofei; Jiang, Limei; Zhou, Yichun

    2017-11-01

    With the development of integrated circuit technology and the decreasing size of devices, ferroelectric films used in nano ferroelectric devices must become thinner and thinner. Along with the downscaling of the ferroelectric film is the increasing serious leakage current which has seriously hindered the broad application of ferroelectric devices. Here we tuned the leakage currents in Pb(Zr0.1Ti0.9)O3 ferroelectric thin films through flexoelectricity by means of the phase field method with diffusion equations for the electron/hole. It is shown that the strain gradient generated by the local compressive force can raise the hole current but reduce the electron current in ferroelectric film. Pure mechanical force can therefore be used to diminish the leakage current. With the further study of the effects of different flexoelectric coupling types on leakage current, we demonstrate that the flexocoupling type described by the longitudinal flexoelectric coefficient promotes the increase of the hole current but has a side-effect on the increase of the electron current. In contrast, the role of the flexocoupling type described by the transverse flexoelectric coefficient is just the opposite.

  20. Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

    CERN Document Server

    Okuyama, Masanori

    2005-01-01

    Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

  1. Far infrared and terahertz spectroscopy of ferroelectric soft modes in thin films: a review

    Czech Academy of Sciences Publication Activity Database

    Petzelt, Jan; Kamba, Stanislav

    2016-01-01

    Roč. 503, č. 1 (2016), s. 19-44 ISSN 0015-0193 R&D Projects: GA ČR GA15-08389S Institutional support: RVO:68378271 Keywords : soft mode * central mode * ferroelectric thin film * terahertz spectroscopy * far-infrared spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.551, year: 2016

  2. Performance Enhancement of Tunable Bandpass Filters Using Selective Etched Ferroelectric Thin Films

    Science.gov (United States)

    Miranda, Felix A.; Mueller, Carl H.; VanKeuls, Fred W.; Subramanyam, Guru; Vignesparamoorthy, Sivaruban

    2003-01-01

    The inclusion of voltage-tunable barium strontium titanate (BSTO) thin films into planar band pass filters offers tremendous potential to increase their versatility. The ability to tune the passband so as to correct for minor deviations in manufacturing tolerances, or to completely reconfigure the operating frequencies of a microwave communication system, are highly sought-after goals. However, use of ferroelectric films in these devices results in higher dielectric losses, which in turn increase the insertion loss and decrease the quality factors of the filters. This study explores the use of patterned ferroelectric layers to minimize dielectric losses without degrading tunability. Patterning the ferroelectric layers enables us to constrict the width of the ferroelectric layers between the coupled microstrip lines, and minimize losses due to ferroelectric layers. Coupled one-pole microstrip bandpass filters with fundamental resonances at approx. 7.2 GHz and well defined harmonic resonances at approx. 14.4 and approx. 21.6 GHz, were designed, simulated and tested. For one of the filters, experimental results verified that its center frequency was tunable by 528 MHz at a center frequency of 21.957 GHz, with insertion losses varying from 4.3 to 2.5 dB, at 0 and 3.5 V/micron, respectively. These data demonstrate that the tuning-to-loss figure of merit of tunable microstrip filters can be greatly improved using patterned ferroelectric thin films as the tuning element, and tuning can be controlled by engineering the ferroelectric constriction in the coupled sections.

  3. Analysis and Optimization of Thin Film Ferroelectric Phase Shifters

    Science.gov (United States)

    Romanofsky, Robert R.; VanKeuls, Fred W.; Warner, Joseph D.; Mueller, Carl H.; Alterovitz, Samuel A.; Miranda, Felix A.; Qureshi, A. Haq; Romanofsky, Robert R. (Technical Monitor)

    2000-01-01

    Microwave phase shifters have been fabricated from (YBa2Cu3O(7-delta) or Au)/SrTiO3 and Au/Ba(x)Sr(1-x)TiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counter-parts parts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is approximately equal 5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.

  4. Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Guan, Yan; Vopson, Melvin M.; Xu, Jin; Liang, Hailong; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    HfO 2 -based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E c ), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E c ), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

  5. Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films

    International Nuclear Information System (INIS)

    Kim, D J; Gruverman, A; Connell, J G; Seo, S S A

    2016-01-01

    Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO 3 and Pb(Zr,Ti)O 3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO 3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO 3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects. (paper)

  6. Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

    Science.gov (United States)

    M. Bedoya-Hincapié, C.; H. Ortiz-Álvarez, H.; Restrepo-Parra, E.; J. Olaya-Flórez, J.; E. Alfonso, J.

    2015-11-01

    The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal (x-y) direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response. Project sponsored by the research departments of the Universidad Nacional de Colombia DIMA and DIB under Project 201010018227-“Crecimiento y caracterización eléctrica y estructural de películas delgadas de BixTiyOz producidas mediante Magnetrón Sputtering” and Project 12920-“Desarrollo teóricoexperimental de nanoestructuras basadas en Bismuto y materiales similares” and “Bisnano Project.”

  7. The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Guan, Yan; Liu, Xiaohua; Zhou, Dayu; Xu, Jin; Cao, Fei; Dong, Xianlin; Mueller, Johannes; Schenk, Tony; Schroeder, Uwe

    2015-01-01

    A wealth of studies have confirmed that the low-field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro-mechanism. Recently, HfO 2 thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub-coercive polarization reversal properties were investigated for 10 nm thick Si-doped HfO 2 thin films. The applicability of the Rayleigh law to ultra-thin ferroelectric films was first confirmed, indicating the existence of a multi-domain structure. Since the grain size is about 20-30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

    International Nuclear Information System (INIS)

    Misirlioglu, I B; Yildiz, M

    2013-01-01

    We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>10 25 m −3 ) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density ( 24 m −3 ). We demonstrate that partially depleted films should be expected to exhibit peculiar capacitance–voltage characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZr x Ti 1−x O 3 . (paper)

  9. Ferroelectric properties of lead-free polycrystalline CaBi2Nb2O9 thin films on glass substrates

    Science.gov (United States)

    Ahn, Yoonho; Jang, Joonkyung; Son, Jong Yeog

    2016-03-01

    CaBi2Nb2O9 (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm2 (2Pr ˜9.6 μC/cm2), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.

  10. Large built-in electric fields due to flexoelectricity in compositionally graded ferroelectric thin films

    Science.gov (United States)

    Karthik, J.; Mangalam, R. V. K.; Agar, J. C.; Martin, L. W.

    2013-01-01

    We investigate the origin of large built-in electric fields that have been reported in compositionally graded ferroelectric thin films using PbZr1-xTixO3 (0.2material. Using a Ginzburg-Landau-Devonshire phenomenological formalism that includes the effects of compositional gradients, mechanical strain relaxation, and flexoelectricity, we demonstrate that the flexoelectric coupling between the out-of-plane polarization and the gradient of the epitaxial strain throughout the thickness of the film, not other inhomogeneities (i.e., composition or polarization), is directly responsible for the observed voltage offsets. This work demonstrates the importance of flexoelectricity in influencing the properties of ferroelectric thin films and provides a powerful mechanism to control their properties.

  11. Characterization of the effective electrostriction coefficients in ferroelectric thin films

    Science.gov (United States)

    Kholkin, A. L.; Akdogan, E. K.; Safari, A.; Chauvy, P.-F.; Setter, N.

    2001-06-01

    Electromechanical properties of a number of ferroelectric films including PbZrxTi1-xO3(PZT), 0.9PbMg1/3Nb2/3O3-0.1PbTiO3(PMN-PT), and SrBi2Ta2O9(SBT) are investigated using laser interferometry combined with conventional dielectric measurements. Effective electrostriction coefficients of the films, Qeff, are determined using a linearized electrostriction equation that couples longitudinal piezoelectric coefficient, d33, with the polarization and dielectric constant. It is shown that, in PZT films, electrostriction coefficients slightly increase with applied electric field, reflecting the weak contribution of non-180° domains to piezoelectric properties. In contrast, in PMN-PT and SBT films electrostriction coefficients are field independent, indicating the intrinsic nature of the piezoelectric response. The experimental values of Qeff are significantly smaller than those of corresponding bulk materials due to substrate clamping and possible size effects. Electrostriction coefficients of PZT layers are shown to depend strongly on the composition and preferred orientation of the grains. In particular, Qeff of (100) textured rhombohedral films (x=0.7) is significantly greater than that of (111) layers. Thus large anisotropy of the electrostrictive coefficients is responsible for recently observed large piezoelectric coefficients of (100) textured PZT films. Effective electrostriction coefficients obtained by laser interferometry allow evaluation of the electromechanical properties of ferroelectric films based solely on the dielectric parameters and thus are very useful in the design and fabrication of microsensors and microactuators.

  12. Modeling constrained sintering of bi-layered tubular structures

    DEFF Research Database (Denmark)

    Tadesse Molla, Tesfaye; Kothanda Ramachandran, Dhavanesan; Ni, De Wei

    2015-01-01

    Constrained sintering of tubular bi-layered structures is being used in the development of various technologies. Densification mismatch between the layers making the tubular bi-layer can generate stresses, which may create processing defects. An analytical model is presented to describe...... the densification and stress developments during sintering of tubular bi-layered samples. The correspondence between linear elastic and linear viscous theories is used as a basis for derivation of the model. The developed model is first verified by finite element simulation for sintering of tubular bi-layer system....... Furthermore, the model is validated using densification results from sintering of bi-layered tubular ceramic oxygen membrane based on porous MgO and Ce0.9Gd0.1O1.95-d layers. Model input parameters, such as the shrinkage kinetics and viscous parameters are obtained experimentally using optical dilatometry...

  13. Piezoelectric MEMS: Ferroelectric thin films for MEMS applications

    Science.gov (United States)

    Kanno, Isaku

    2018-04-01

    In recent years, piezoelectric microelectromechanical systems (MEMS) have attracted attention as next-generation functional microdevices. Typical applications of piezoelectric MEMS are micropumps for inkjet heads or micro-gyrosensors, which are composed of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films and have already been commercialized. In addition, piezoelectric vibration energy harvesters (PVEHs), which are regarded as one of the key devices for Internet of Things (IoT)-related technologies, are promising future applications of piezoelectric MEMS. Significant features of piezoelectric MEMS are their simple structure and high energy conversion efficiency between mechanical and electrical domains even on the microscale. The device performance strongly depends on the function of the piezoelectric thin films, especially on their transverse piezoelectric properties, indicating that the deposition of high-quality piezoelectric thin films is a crucial technology for piezoelectric MEMS. On the other hand, although the difficulty in measuring the precise piezoelectric coefficients of thin films is a serious obstacle in the research and development of piezoelectric thin films, a simple unimorph cantilever measurement method has been proposed to obtain precise values of the direct or converse transverse piezoelectric coefficient of thin films, and recently this method has become to be the standardized testing method. In this article, I will introduce fundamental technologies of piezoelectric thin films and related microdevices, especially focusing on the deposition of PZT thin films and evaluation methods for their transverse piezoelectric properties.

  14. Synthesis of PVDF/SBT composite thin films by spin coating technology and their ferroelectric properties

    Directory of Open Access Journals (Sweden)

    Chen Changchun

    2016-09-01

    Full Text Available Ferroelectric composite thin films of x-SBT/PVDF with different SBT content (weight ratios of SBT to PVDF, x = 0 %, 5 %, 10 %, 15 %, 20 % were prepared by spin-coating method. The crystal structures of x-SBT/PVDF films were analyzed by X-ray diffraction (XRD measurements and Fourier transform-infrared spectroscopy (FT-IR, respectively. Experimental results demonstrated that both α, β-phases PVDF and the layered perovskite SBT co-existed in the x-SBT/PVDF samples. With an increase of SBT content in the x-SBT/PVDF thin films, both the dielectric constant and the saturated polarization were also increased, compared with those of pure PVDF thin film. More importantly, when the SBT content in the x-SBT/PVDF thin films was larger than 15 %, the coercive field of x-SBT/PVDF thin films was also decreased.

  15. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

    Science.gov (United States)

    Huang, Fei; Chen, Xing; Liang, Xiao; Qin, Jun; Zhang, Yan; Huang, Taixing; Wang, Zhuo; Peng, Bo; Zhou, Peiheng; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Liu, Ming; Liu, Qi; Tian, He; Bi, Lei

    2017-02-01

    Owing to their prominent stability and CMOS compatibility, HfO 2 -based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO 2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

  16. Total-dose radiation-induced degradation of thin film ferroelectric capacitors

    International Nuclear Information System (INIS)

    Schwank, J.R.; Nasby, R.D.; Miller, S.L.; Rodgers, M.S.; Dressendorfer, P.V.

    1990-01-01

    Thin film PbZr y Ti 1-y O 3 (PZT) ferroelectric memories offer the potential for radiation-hardened, high-speed nonvolatile memories with good retention and fatigue properties. In this paper we explore in detail the radiation hardness of PZT ferroelectric capacitors. Ferroelectric capacitors were irradiated using x-ray and Co-60 sources to dose levels up to 16 Mrad(Si). The capacitors were characterized for their memory properties both before and after irradiation. The radiation hardness was process dependent. Three out of four processes resulted in capacitors that showed less than 30% radiation-induced degradation in retained polarization charge and remanent polarization after irradiating to 16 Mrad(Si). On the other hand, one of the processes showed significant radiation-induced degradation in retained polarization charge and remanent polarization at dose levels above 1 Mrad(Si). The decrease in retained polarization charge appears to be due to an alteration of the switching characteristics of the ferroelectric due to changes in the internal fields. The radiation-induced degradation is recoverable by a postirradiation biased anneal and can be prevented entirely if devices are cycled during irradiation. The authors have developed a model to simulate the observed degradation

  17. Ferroelectric ultrathin perovskite films

    Science.gov (United States)

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  18. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-04-24

    A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

  19. Investigation of ferroelectric domains in thin films of vinylidene fluoride oligomers

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Pankaj, E-mail: psharma@huskers.unl.edu; Poddar, Shashi; Ducharme, Stephen; Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu [Department of Physics and Astronomy, and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Nebraska 68588 (United States); Korlacki, Rafal [Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Nebraska 68588 (United States)

    2014-07-14

    High-resolution vector piezoresponse force microscopy (PFM) has been used to investigate ferroelectric domains in thin vinylidene fluoride oligomer films fabricated by the Langmuir-Blodgett deposition technique. Molecular chains are found to be preferentially oriented normal to the substrate, and PFM imaging shows that the films are in ferroelectric β-phase with a predominantly in-plane polarization, in agreement with infrared spectroscopic ellipsometry and X-ray diffraction measurements. The fractal analysis of domain structure has yielded the Hausdorff dimension (D) in the range of ∼1.3–1.5 indicating a random-bond nature of the disorder potential, with domain size exhibiting Landau-Lifshitz-Kittel scaling.

  20. Flexoelectric rotation of polarization in ferroelectric thin films

    NARCIS (Netherlands)

    Catalan, G.; Lubk, A.; Vlooswijk, A.H.G.; Snoeck, E.; Magen, C.; Janssens, J.A.; Janssens, A.; Rispens, G.; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Noheda, B.

    2011-01-01

    Strain engineering enables modification of the properties of thin films using the stress from the substrates on which they are grown. Strain may be relaxed, however, and this can also modify the properties thanks to the coupling between strain gradient and polarization known as flexoelectricity.

  1. Optical refraction index and polarization profile of ferroelectric thin films

    Czech Academy of Sciences Publication Activity Database

    Glinchuk, M. D.; Eliseev, E. A.; Deineka, Alexander; Jastrabík, Lubomír; Suchaneck, G.; Sandner, T.; Gerlach, G.; Hrabovský, Miroslav

    2001-01-01

    Roč. 38, 1-4 (2001), s. 101-110 ISSN 1058-4587 R&D Projects: GA MŠk LN00A015; GA ČR GA202/00/1425 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin film * refraction index * polarization * film thickness Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.512, year: 2001

  2. Bi-Layer Wound Dressing System for Combat Casualty Care

    National Research Council Canada - National Science Library

    Martineau, Lucie; Shek, Pang N

    2004-01-01

    .... Considering that commercially available dressings are not designed to meet the challenges of treating combat burn wounds, DRDC-Toronto has designed a novel, absorbent and medicated bi-layer wound...

  3. Bi-Layer Wound Dressing System for Combat Casualty Care

    National Research Council Canada - National Science Library

    Martineau, Lucie; Shek, Pang N

    2004-01-01

    .... Considering that commercially available dressings are not designed to meet the challenges of treating combat burn wounds, DRDC Toronto has designed a novel, absorbent and medicated bi-layer wound...

  4. Optically controlled polarization in highly oriented ferroelectric thin films

    Science.gov (United States)

    Borkar, Hitesh; Tomar, M.; Gupta, Vinay; Katiyar, Ram S.; Scott, J. F.; Kumar, Ashok

    2017-08-01

    The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3 (PLBZT) thin film has been studied in the dark and under illumination from a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on a LaNiO3/LaAlO3 substrate by pulsed laser deposition; it showed well-saturated polarization which was significantly enhanced under light illumination. We employed two configurations for polarization characterization: the first deals with out-of-plane polarization with a single capacitor under investigation, whereas the second uses two capacitors connected in series via the bottom electrode. Two different configurations were illuminated using different energy sources and their effects were studied. The latter configuration shows a significant change in polarization under light illumination that may provide an extra degree of freedom for device miniaturization. The polarization was also tested using positive-up and negative-down measurements, confirming robust polarization and its switching under illumination.

  5. The enhanced piezoelectricity in compositionally graded ferroelectric thin films under electric field: A role of flexoelectric effect

    Science.gov (United States)

    Qiu, Ye; Wu, Huaping; Wang, Jie; Lou, Jia; Zhang, Zheng; Liu, Aiping; Chai, Guozhong

    2018-02-01

    Compositionally graded ferroelectric thin films are found to produce large strain gradients, which can be used to tune the physical properties of materials through the flexoelectric effect, i.e., the coupling of polarization and the strain gradient. The influences of the flexoelectric effect on the polarization distribution and the piezoelectric properties in compositionally graded Ba1-xSrxTiO3 ferroelectric thin films are investigated by using an extended thermodynamic theory. The calculation results show that the presence of the flexoelectric effect tends to enhance and stabilize polarization components. The polarization rotation induced by the flexoelectric field has been predicted, which is accompanied by more uniform and orderly polarization components. A remarkable enhancement of piezoelectricity is obtained when the flexoelectric field is considered, suggesting that compositionally graded Ba1-xSrxTiO3 ferroelectric thin films with a large strain gradient are promising candidates for piezoelectric devices.

  6. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou Hao; Hong Jiawang; Zhang Yihui; Li Faxin; Pei Yongmao; Fang Daining

    2012-01-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO 3 thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  7. Screening effects in ferroelectric resistive switching of BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    S. Farokhipoor

    2014-05-01

    Full Text Available We investigate ferroelectric resistive switching in BiFeO3 thin films by performing local conductivity measurements. By comparing conduction characteristics at artificially up-polarized domains with those at as-grown down-polarized domains, the change in resistance is attributed to the modification of the electronic barrier height at the interface with the electrodes, upon the reversal of the electrical polarization. We also study the effect of oxygen vacancies on the observed conduction and we propose the existence of a different screening mechanism for up and down polarized domains.

  8. Modification of photosensing property of CdS–Bi{sub 2}S{sub 3} bi-layer by thermal annealing and swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shaikh, Shaheed U.; Siddiqui, Farha Y. [Thin Film and Nanotechnology Laboratory, Department of Physics (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Singh, Fouran; Kulriya, Pawan K. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Phase, D.M. [UGC DAE Consortium for Scientific Research, Khandwa Road, Indore 452017 (India); Sharma, Ramphal, E-mail: ramphalsharma@yahoo.com [Thin Film and Nanotechnology Laboratory, Department of Physics (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India)

    2016-02-01

    The CdS–Bi{sub 2}S{sub 3} bi-layer thin films have been deposited on Indium Tin Oxide (ITO) glass substrates at room temperature by Chemical Bath Deposition Technique (CBD) and bi-layer thin films were annealed in air atmosphere for 1 h at 250 {sup °}C. The air annealed sample was irradiated using Au{sup 9+} ions at the fluence 5 × 10{sup 11} ion/cm{sup 2} with 120 MeV energy. Effects of Swift Heavy Ion (SHI) irradiation on CdS–Bi{sub 2}S{sub 3} bi-layer thin films were studied. The results are explained on the basis annealing and high electronic excitation, using X-ray diffraction (XRD), Selective Electron Area Diffraction (SEAD), Atomic Force Microscopy (AFM), Raman Spectroscopy, UV spectroscopy and I–V characteristics. The photosensing property after illumination of visible light over the samples is studied. These as-deposited, annealed and irradiated bi-layer thin films are used to sense visible light at room temperature. - Graphical abstract: Schematic illustration of CdS–Bi{sub 2}S{sub 3} bi-layer thin film (a) As-deposited (b) Annealed (c) irradiated sample respectively (d) Model of bi-layer photosensor device (e) Graph of illumination intensity verses photosensitivity. - Highlights: • CdS–Bi{sub 2}S{sub 3} bi-layer thin film prepared at room temperature. • Irradiated using Au{sup 9+} ions at the fluence of 5 × 10{sup 11} ion/cm{sup 2} with 120 MeV energy. • Study of modification induced by irradiations. • Study of Photosensitivity after annealing and irradiation.

  9. Ferroelectric and piezoelectric thin films and their applications for integrated capacitors, piezoelectric ultrasound transducers and piezoelectric switches

    International Nuclear Information System (INIS)

    Klee, M; Boots, H; Kumar, B; Heesch, C van; Mauczok, R; Keur, W; Wild, M de; Esch, H van; Roest, A L; Reimann, K; Leuken, L van; Wunnicke, O; Zhao, J; Schmitz, G; Mienkina, M; Mleczko, M; Tiggelman, M

    2010-01-01

    Ferroelectric and piezoelectric thin films are gaining more and more importance for the integration of high performance devices in small modules. High-K 'Integrated Discretes' devices have been developed, which are based on thin film ferroelectric capacitors integrated together with resistors and ESD protection diodes in a small Si-based chip-scale package. Making use of ferroelectric thin films with relative permittivity of 950-1600 and stacking processes of capacitors, extremely high capacitance densities of 20-520 nF/mm 2 , high breakdown voltages up to 140 V and lifetimes of more than 10 years at operating voltages of 5 V and 85 deg. C are achieved. Thin film high-density capacitors play also an important role as tunable capacitors for applications such as tuneable matching circuits for RF sections of mobile phones. The performance of thin film tuneable capacitors at frequencies between 1 MHz and 1 GHz is investigated. Finally thin film piezoelectric ultrasound transducers, processed in Si- related processes, are attractive for medical imaging, since they enable large bandwidth (>100%), high frequency operation and have the potential to integrate electronics. With these piezoelectric thin film ultrasound transducers real time ultrasound images have been realized. Finally, piezoelectric thin films are used to manufacture galvanic MEMS switches. A model for the quasi-static mechanical behaviour is presented and compared with measurements.

  10. Comment on 'extrinsic versus intrinsic ferroelectric switching : experimental investigations using ultra-thin PVDF Langmuir-Blodgett films'

    NARCIS (Netherlands)

    Naber, R.C.G.; Blom, P.W.M.; de Leeuw, DM

    2006-01-01

    Previous work on ultra-thin P(VDF-TrFE) Langmuir-Blodgett films has indicated a transition from extrinsic to intrinsic ferroelectric switching. The lack of several key features of intrinsic switching in the experimental work reported by Kliem et al argues against intrinsic switching. In this Comment

  11. Development and construction of a novel MOCVD facility for the growth of ferroelectric thin layers

    International Nuclear Information System (INIS)

    Schaefer, P.R.

    2002-02-01

    This thesis deals with the production of ferroelectric thin films using the MOCVD technology. The main focus is put on the design and construction of a complete MOCVD research system that is equipped with a novel non-contact vaporizer system. The precursors are nebulized in an ultrasonic atomizer and injected into a hot gas stream, so they can vaporize without getting into contact with a hot surface. Hence, one of the biggest disadvantages of conventional vaporizer concepts, the contamination of the vaporizing element with decomposing chemicals, could be avoided completely, resulting in a nearly maintenance-free system. In a direct comparison with the well-established Direct Liquid Injection Subsystem DLI-25C from MKS Instruments, the advantages of non-contact evaporation were clearly demonstrated. Additionally, the scope of this work included the development of standard deposition processes for the ternary oxides SrTiO 3 , BaTiO 3 und PbTiO 3 and growth studies were performed. Electrical measurements performed on MIM structures with Pt electrodes and SrTiO 3 as dielectric indicate a high film quality comparable with results presented in the literature. Furthermore, for the first time the solid solution (Pb x Ba 1-x )TiO 3 has been deposited by MOCVD. This material system is widely unknown in thin film form and it is well suited as a model system to investigate the influence of mechanical stresses on the film properties, because it represents a transition between the (as a thin film) superparaelectric barium titanate and the ferroelectric lead titanate. Through variation of the lead/barium ratio the tetragonal distortion of the lattice cell could be adjusted in a wide range. (orig.)

  12. Chemical preparation of ferroelectric mesoporous barium titanate thin films: drastic enhancement of Curie temperature induced by mesopore-derived strain.

    Science.gov (United States)

    Suzuki, Norihiro; Jiang, Xiangfen; Salunkhe, Rahul R; Osada, Minoru; Yamauchi, Yusuke

    2014-09-01

    Mesoporous barium titanate (BT) thin films are synthesized by a surfactant-assisted sol-gel method. The obtained mesoporous BT thin films show enhanced ferroelectricity due to the effective strains induced by mesopores. The Curie temperature (T(c)) of the mesoporous BT reaches approximately 470 °C. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Silicon-doped hafnium oxide anti-ferroelectric thin films for energy storage

    Science.gov (United States)

    Ali, Faizan; Liu, Xiaohua; Zhou, Dayu; Yang, Xirui; Xu, Jin; Schenk, Tony; Müller, Johannes; Schroeder, Uwe; Cao, Fei; Dong, Xianlin

    2017-10-01

    Motivated by the development of ultracompact electronic devices as miniaturized energy autonomous systems, great research efforts have been expended in recent years to develop various types of nano-structural energy storage components. The electrostatic capacitors characterized by high power density are competitive; however, their implementation in practical devices is limited by the low intrinsic energy storage density (ESD) of linear dielectrics like Al2O3. In this work, a detailed experimental investigation of energy storage properties is presented for 10 nm thick silicon-doped hafnium oxide anti-ferroelectric thin films. Owing to high field induced polarization and slim double hysteresis, an extremely large ESD value of 61.2 J/cm3 is achieved at 4.5 MV/cm with a high efficiency of ˜65%. In addition, the ESD and the efficiency exhibit robust thermal stability in 210-400 K temperature range and an excellent endurance up to 109 times of charge/discharge cycling at a very high electric field of 4.0 MV/cm. The superior energy storage performance together with mature technology of integration into 3-D arrays suggests great promise for this recently discovered anti-ferroelectric material to replace the currently adopted Al2O3 in fabrication of nano-structural supercapacitors.

  14. Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

    Science.gov (United States)

    Nguyen, Minh D.; Dekkers, Matthijn; Houwman, Evert; Steenwelle, Ruud; Wan, Xin; Roelofs, Andreas; Schmitz-Kempen, Thorsten; Rijnders, Guus

    2011-12-01

    A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film stacks are grown on different substrate-buffer-layer combinations by pulsed laser deposition. Compressive or tensile strain caused by the difference in thermal expansion of the PZT film and substrate influences the ferroelectric and piezoelectric properties. All the PZT stacks show ferroelectric and piezoelectric behavior that is consistent with the theoretical model for strained thin films in the ferroelectric r-phase. We conclude that clamped (001) oriented Pb(Zr0.52Ti0.48)O3 thin films strained by the substrate always show rotation of the polarization vector.

  15. Polarization enhancement and ferroelectric switching enabled by interacting magnetic structures in DyMnO3 thin films

    KAUST Repository

    Lu, Chengliang

    2013-12-02

    The mutual controls of ferroelectricity and magnetism are stepping towards practical applications proposed for quite a few promising devices in which multiferroic thin films are involved. Although ferroelectricity stemming from specific spiral spin ordering has been reported in highly distorted bulk perovskite manganites, the existence of magnetically induced ferroelectricity in the corresponding thin films remains an unresolved issue, which unfortunately halts this step. In this work, we report magnetically induced electric polarization and its remarkable response to magnetic field (an enhancement of ?800% upon a field of 2 Tesla at 2 K) in DyMnO3 thin films grown on Nb-SrTiO3 substrates. Accompanying with the large polarization enhancement, the ferroelectric coercivity corresponding to the magnetic chirality switching field is significantly increased. A picture based on coupled multicomponent magnetic structures is proposed to understand these features. Moreover, different magnetic anisotropy related to strain-suppressed GdFeO 3-type distortion and Jahn-Teller effect is identified in the films.

  16. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Hao [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Hong Jiawang; Zhang Yihui [Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Li Faxin [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Pei Yongmao, E-mail: peiym@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Fang Daining, E-mail: fangdn@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

    2012-09-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO{sub 3} thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  17. Low temperature dielectric relaxation and charged defects in ferroelectric thin films

    Directory of Open Access Journals (Sweden)

    A. Artemenko

    2013-04-01

    Full Text Available We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

  18. Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe

    2013-01-01

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO 2 film under bipolar pulsed-field operation. High field cycling causes a “wake-up” in virgin “pinched” polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up

  19. A Reconfigurable Coplanar Waveguide Bowtie Antenna Using an Integrated Ferroelectric Thin-Film Varactor

    Directory of Open Access Journals (Sweden)

    K. C. Pan

    2012-01-01

    Full Text Available A novel printed antenna with a frequency reconfigurable feed network is presented. The antenna consists of a bowtie structure patch radiating element in the inner space of an annulus that is on a nongrounded substrate with a ferroelectric (FE Barium Strontium Titanate (BST thin film. The bowtie patch is fed by a coplanar waveguide (CPW transmission line that also includes a CPW-based BST shunt varactor. Reconfiguration of the compact 8 mm × 8 mm system has been demonstrated by shifting the antenna system’s operating frequency 500 MHz in the 7–9 GHz band by applying a DC voltage bias.

  20. Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Guang-hao; Bai, Yu-hang; Cui, Guo-xin; Li, Chen; Qiu, Xiang-biao; Wu, Di; Lu, Yan-qing, E-mail: yqlu@nju.edu.cn [National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Geng, De-qiang [Jinan Jingzheng Electronics Co., Ltd., Jinan 250100 (China)

    2016-07-15

    Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (∼28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

  1. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application.

    Science.gov (United States)

    Shen, Zhenkui; Chen, Zhihui; Lu, Qian; Qiu, Zhijun; Jiang, Anquan; Qu, Xinping; Chen, Yifang; Liu, Ran

    2011-07-27

    In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

  2. Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7O3 for multi-bit storage application

    Directory of Open Access Journals (Sweden)

    Lu Qian

    2011-01-01

    Full Text Available Abstract In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7O3 (PZT] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.

  3. The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin films

    NARCIS (Netherlands)

    Catalan, G; Sinnamon, LJ; Gregg, JM

    2004-01-01

    Recent experimental measurements of large flexoelectric coefficients in ferroelectric ceramics suggest that strain gradients can affect the polarization and permittivity behaviour of inhomogeneously strained ferroelectrics. Here we present a phenomenological model of the effect of flexoelectricity

  4. Ferroelectric BaTiO3 thin films on Ti substrate fabricated using pulsed-laser deposition.

    Science.gov (United States)

    He, J; Jiang, J C; Liu, J; Collins, G; Chen, C L; Lin, B; Giurgiutiu, V; Guo, R Y; Bhalla, A; Meletis, E I

    2010-09-01

    We report on the fabrication of ferroelectric BaTiO3 thin films on titanium substrates using pulsed laser deposition and their microstructures and properties. Electron microscopy studies reveal that BaTiO3 films are composed of crystalline assemblage of nanopillars with average cross sections from 100 nm to 200 nm. The BaTiO3 films have good interface structures and strong adhesion with respect to Ti substrates by forming a rutile TiO2 intermediate layer with a gradient microstructure. The room temperature ferroelectric polarization measurements show that the as-deposited BTO films possess nearly the same spontaneous polarization as the bulk BTO ceramics indicating formation of ferroelectric domains in the films. Successful fabrication of such ferroelectric films on Ti has significant importance for the development of new applications such as structural health monitoring spanning from aerospace to civil infrastructure. The work can be extended to integrate other ferroelectric oxide films with various promising properties to monitor the structural health of materials.

  5. Influence of an Fe cap layer on the structural and magnetic properties of Fe49Pt51/Fe bi-layers

    International Nuclear Information System (INIS)

    Chao-Yang, Duan; Bin, Ma; Zong-Zhi, Zhang; Qing-Yuan, Jin; Fu-Lin, Wei

    2009-01-01

    The influences of an Fe cap layer on the structural and magnetic properties of FePt/Fe bi-layers are investigated. Compared with single FePt alloy films, a thin Fe layer can affect the crystalline orientation and improve the chemical ordering of L1 0 FePt films. Moreover, the coercivity increases when a thin Fe layer covers the FePt layer. Beyond a critical thickness, however, the Fe cover layer quickens the magnetization reversal of Fe 49 Pt 51 /Fe bi-layers by their exchange coupling

  6. THIN FILMS OF A NEW ORGANIC SINGLE-COMPONENT FERROELECTRIC 2-METHYLBENZIMIDAZOLE

    Directory of Open Access Journals (Sweden)

    E. V. Balashova

    2016-09-01

    Full Text Available Subject of Research.We present results of structural and dielectric study of organic ferroelectric 2-methylbenzimidazole (MBI thin films. Method. The films have been grown on substrates of leuco-sapphire, fused and crystalline silica, neodymium gallate, bismuth germanate, gold, aluminium, platinum. The films have been grown by two different methods: substrate covering by ethanol solution of MBI and subsequent ethanol evaporation; sublimation at the temperature near 375 K under atmospheric pressure. Crystallographic orientation studies have been performed by means of «DRON-3» X-ray diffractometer, block structure of the films has been determined by «LaboPol-3» polarizing microscope. Small-signal dielectric response has been received with the use of «MIT 9216A» digital LCR-meter, while strong-signal dielectric response has been studied by Sawyer-Tower circuit. Main Resuts. We have shown that the films obtained by evaporation are continuous and textured. Obtained film structure depends on the concentration of the solution. Films may consist of blocks that are splitted crystals like spherulite. Spontaneous polarization components in such films may be directed both perpendicularly and in the film plane. We have also obtained structures consisting of single-crystal blocks with spontaneous polarization components being allocated in the film plane. Block sizes vary from a few to hundreds of microns. Films obtained by sublimation are amorphous or dendritic. The dielectric properties of the films obtained by evaporation have been studied. We have shown that the dielectric constant and dielectric loss tangent increase under heating. The dielectric hysteresis loops are observed at the temperature equal to 291-379 K. The remnant polarization increases with temperature for constant amplitude of the external electric field, and achieves 4.5mC/cm2, while the coercive field remains constant. We propose that such behavior is explained by increase of the

  7. Pulsed-Laser Crystallization of Ferroelectric/Piezoelectric Oxide Thin Films

    Science.gov (United States)

    Rajashekhar, Adarsh

    Integration of ferroelectric/piezoelectric thin films, such as those of lead zirconate titanate (PZT), with temperature sensitive substrates (complementary metal oxide semiconductors (CMOS), or polymers) would benefit from growth at substrate temperatures below 400°C. However, high temperatures are usually required for obtaining good quality PZT films via conventional routes like rapid thermal processing (>550°C). Those conditions are not compatible either with polymer substrates or completed CMOS circuits and dictate exploration of alternative methods to realize integration with such substrates. In part of this work, factors influencing KrF excimer laser induced crystallization of amorphous sputtered Pb(Zr0.30Ti0.70)O3 thin films at substrate temperatures fluorite phase, while annealing in pure oxygen produced the perovskite phase at relatively lower annealing laser energy densities. Heterogeneous nucleation from the substrate is favored on utilizing a layer-by-layer growth and crystallization process. Films were also grown on polymers using this method. Ferroelectric switching was demonstrated, but extensive process optimization would be needed to reduce leakage and porosity. Real time laser annealing during growth allows for scaling of the layer-by-layer growth process. A pulsed laser deposition system with in situ laser annealing was thus designed, built, and utilized to grow Pb(Zr 0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of 370°C. Polycrystalline 1.1 microm thick films exhibited columnar grains with small grain sizes ( 30 nm). The films showed well-saturated hysteresis loops (with a remanent polarization of 25 microC/cm2, and a coercive field of 50 kV/cm) and exhibited loss tangents surface accompanying increased bombardment. It was found that varying the fractional annealing duration with respect to the deposition duration produced little effect on lateral grain growth. However, increasing the

  8. Enhanced Switchable Ferroelectric Photovoltaic Effects in Hexagonal Ferrite Thin Films via Strain Engineering.

    Science.gov (United States)

    Han, Hyeon; Kim, Donghoon; Chu, Kanghyun; Park, Jucheol; Nam, Sang Yeol; Heo, Seungyang; Yang, Chan-Ho; Jang, Hyun Myung

    2018-01-17

    Ferroelectric photovoltaics (FPVs) are being extensively investigated by virtue of switchable photovoltaic responses and anomalously high photovoltages of ∼10 4 V. However, FPVs suffer from extremely low photocurrents due to their wide band gaps (E g ). Here, we present a promising FPV based on hexagonal YbFeO 3 (h-YbFO) thin-film heterostructure by exploiting its narrow E g . More importantly, we demonstrate enhanced FPV effects by suitably exploiting the substrate-induced film strain in these h-YbFO-based photovoltaics. A compressive-strained h-YbFO/Pt/MgO heterojunction device shows ∼3 times enhanced photovoltaic efficiency than that of a tensile-strained h-YbFO/Pt/Al 2 O 3 device. We have shown that the enhanced photovoltaic efficiency mainly stems from the enhanced photon absorption over a wide range of the photon energy, coupled with the enhanced polarization under a compressive strain. Density functional theory studies indicate that the compressive strain reduces E g substantially and enhances the strength of d-d transitions. This study will set a new standard for determining substrates toward thin-film photovoltaics and optoelectronic devices.

  9. Origin of thermally stable ferroelectricity in a porous barium titanate thin film synthesized through block copolymer templating

    Directory of Open Access Journals (Sweden)

    Norihiro Suzuki

    2017-07-01

    Full Text Available A porous barium titanate (BaTiO3 thin film was chemically synthesized using a surfactant-assisted sol-gel method in which micelles of amphipathic diblock copolymers served as structure-directing agents. In the Raman spectrum of the porous BaTiO3 thin film, a peak corresponding to the ferroelectric tetragonal phase was observed at around 710 cm−1, and it remained stable at much higher temperature than the Curie temperature of bulk single-crystal BaTiO3 (∼130 °C. Measurements revealed that the ferroelectricity of the BaTiO3 thin film has high thermal stability. By analyzing high-resolution transmission electron microscope images of the BaTiO3 thin film by the fast Fourier transform mapping method, the spatial distribution of stress in the BaTiO3 framework was clearly visualized. Careful analysis also indicated that the porosity in the BaTiO3 thin film introduced anisotropic compressive stress, which deformed the crystals. The resulting elongated unit cell caused further displacement of the Ti4+ cation from the center of the lattice. This displacement increased the electric dipole moment of the BaTiO3 thin film, effectively enhancing its ferro(piezoelectricity.

  10. Depolarization corrections to the coercive field in thin-film ferroelectrics

    CERN Document Server

    Dawber, M; Littlewood, P B; Scott, J F

    2003-01-01

    Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 mu m to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

  11. Improved ferroelectric property and domain structure of highly a-oriented polycrystalline CaBi2Nb2O9 thin film

    Science.gov (United States)

    Ahn, Yoonho; Son, Jong Yeog

    2015-12-01

    A Lead-free ferroelectric CaBi2Nb2O9 (CBNO) thin film was deposited on Si substrate by pulsed laser deposition. TiO2 buffer layer was employed and Pt electrode was used for nano-scale capacitor. The x-ray diffraction reveals that the CBNO thin film has highly a-oriented polycrystalline structure. The highly a-oriented polycrystalline CBNO thin film significantly exhibit the enhanced ferroelectric property with a remnant polarization of 10 μC/cm2 compared to other values reported previously. In particular, the highly a-oriented polycrystalline CBNO thin film show faster ferroelectric switching characteristics than the epitaxially c-oriented CBNO thin film.

  12. Impulsive Stimulated Scattering Spectroscopy of Thin Film and Bulk Ferroelectric Systems.

    Science.gov (United States)

    Dhar, Lisa

    A laser-based ultrasonic technique, impulsive stimulated thermal scattering (ISTS), is used to characterize the acoustic waveguide behavior in a series of silicon -supported and free-standing polyimide bilayer structures. The experimental results demonstrate that multilayer structures are characterizable using ISTS measurements. In addition, simulations of acoustic waveguide behavior in coatings with very thin interfacial layers adjacent to the substrate and in films with continuously changing elastic properties are presented. The results indicate depth-profiling possibilities using ISTS. The same technique is used to evaluate the acoustic wave properties of the piezoelectric film lead zirconium titanate. In this study, numerical results are also presented calculating the electric fields and potentials that accompany the acoustic excitations in this material. Femtosecond impulsive stimulated Raman scattering (ISRS) experiments are performed on the lowest frequency A_1 polariton in the ferroelectric crystal lead titanate. The experimental results coupled with numerical simulations of the polariton behavior focus upon the anharmonic nature of the lattice potential demonstrating that the anharmonicity can be detected in ISRS experiments. An optical technique for performing single-shot pump-probe spectroscopy with femtosecond time resolution is demonstrated. The time-dependent absorption of the laser dyes nile blue, cresyl violet, and ethyl violet is monitored using this technique. The possibility of probing the dynamics of irreversible processes initiated through photoexcitation is discussed. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617 -253-5668; Fax 617-253-1690.).

  13. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

    2017-07-01

    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  14. Piezoelectric Properties of CaBi4Ti4O15 Ferroelectric Thin Films Investigated by Atomic Force Microscopy

    Science.gov (United States)

    Fu, Desheng; Suzuki, Kazuyuki; Kato, Kazumi

    2003-09-01

    Atomic force microscopy (AFM) is used to probe the local piezoelectric properties of CaBi4Ti4O15 (CBT) bismuth-layer-structured ferroelectric thin films. Calibration with Z-cut LaTiO3 and X-cut quartz crystals shows that a conductive AFM tip can be employed as a top electrode to accurately evaluate the piezoelectric displacement in ferroelectric materials without a top electrode. Our measurements on individual grains in CBT film clearly reveal that the local piezoelectric properties are determined by the polarization state in the grain. In a grain with a polar axis very close to the normal direction, a piezoelectric coefficient of 16 pm/V was attained after poling.

  15. Ferroelectric Properties of CaBi4Ti4O15 Thin Films on Ito/glass Substrates Prepared by Sol-Gel Technology

    Science.gov (United States)

    Cheng, Chien-Min; Kuan, Ming-Chang; Chen, Kai-Hunag; Tsai, Jen-Hwan

    In this study, ferroelectric CaBi4Ti4O15 (CBT) thin films prepared by sol-gel method and deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices were fabricated and investigated. The electrical and physical characteristics of as-deposited and annealed CBT thin films for metal-ferroelectric-metal (MFM) structures was discussed and investigated. In addition, the ferroelectric properties in annealed CBT thin films on ITO/glass substrate showed and exhibited clear polarization versus electrical field curves. From p-E curves, the 2Pr value and coercive field of annealed CBT thin films were calculated to be 10μC/cm2 and 180 kV/cm, respectively. Finally, the maximum capacitance, leakage current density, and transmittance within the ultraviolet-visible (UV-vis) spectrum were also investigated and discussed.

  16. Ferroelectrics onto silicon prepared by chemical solution deposition methods: from the thin film to the self-assembled systems

    Directory of Open Access Journals (Sweden)

    Calzada, M. L.

    2006-06-01

    Full Text Available The work of the authors during the last years on ferroelectric thin and ultra-thin films deposited by Chemical Solution Deposition (CSD onto silicon based substrates is reviewed in this paper. Ferroelectric layers integrated with silicon substrates have potential use in the new micro/nanoelectronic devices. Two hot issues are here considered: 1 the use of low processing temperatures of the ferroelectric film, with the objective of not producing any damage on the different elements of the device heterostructure, and 2 the downscaling of the ferroelectric material with the aim of achieving the high densities of integration required in the next generation of nanoelectronic devices. The UV-assisted Rapid Thermal Processing has successfully been used in our laboratory for the fabrication of ferroelectric films at low temperatures. Preliminary results on the CSD preparation of nanosized ferroelectric structures are shown.

    Este artículo revisa el trabajo realizado por los autores durante los últimos años sobre lámina delgada y ultra-delgada ferroeléctrica preparada mediante el depósito químico de disoluciones (CSD sobre substratos de silicio. Las películas ferroeléctricas integradas con silicio tienen potenciales usos en los nuevos dispositivos micro/nanoelectrónicos. Dos aspectos claves son aquí considerados: 1 el uso de bajas temperaturas de procesado de la lámina ferroeléctrica, con el fin de no dañar los diferentes elementos que forman la heteroestructura del dispositivo y 2 la disminución de tamaño del material ferroeléctrico con el fin de conseguir las altas densidades de integración requeridas en la próxima generación de dispositivos nanoelectróncos. Los procesos térmicos rápidos asistidos con irradiación UV se están usando en nuestro laboratorio para conseguir la fabricación del material ferroeléctrico a temperaturas bajas compatibles con la tecnología del silicio. Se muestran resultados preliminares sobre

  17. Down-conversion luminescence and its temperature-sensing properties from Er3+-doped sodium bismuth titanate ferroelectric thin films

    Science.gov (United States)

    Wang, Shanshan; Zheng, Shanshan; Zhou, Hong; Pan, Anlian; Wu, Guangheng; Liu, Jun-ming

    2015-11-01

    Here, we demonstrate outstanding temperature-sensing properties from Na0.5Bi0.49Er0.01TiO3 (NBT:Er) thin films. The perovskite phase for them is stable in the temperature range from 80 to 440 K. Interestingly, the Er doping enhances the ferroelectric polarization and introduces local dipolar, which are positive for temperature sensing. Pumped by a 488-nm laser, the NBT:Er thin films show strong green luminescence with two bands around 525 and 548 nm. The intensity ratio I 525/ I 548 can be used for temperature sensing, and the maximum sensitivity is about 2.3 × 10-3 K-1, higher than that from Er-doped silicon oxide. These suggest NBT:Er thin film is a promising candidate for temperature sensor.

  18. Nanoscale observation of the distribution of the polarization orientation of ferroelectric domains in lithium niobate thin films

    International Nuclear Information System (INIS)

    Gautier, B.; Bornand, V.

    2006-01-01

    In this paper, an Atomic Force Microscope (AFM) in the so-called piezoresponse mode is used to image the ferroelectric domains in radio frequency sputtered lithium niobate (LiNbO 3 ) thin films. It is shown that ferroelectric domains are clearly detectable and most of the time confined in the grains. The vertical and the lateral motion of the vibration of the tip in response to the applied alternating voltage is recorded in order to reconstruct a cartography of the orientation of the ferroelectric domains, allowing us to observe the distribution of the orientation of the polarization in the polycrystalline film and providing additional information about the direction of the polarization, although it is not a fully 3D cartography. From Piezoresponse Force Microscopy images, it is clear that the dispersion of the orientation of the polarization vector in the studied LiNbO 3 sample is very high. It is shown that the AFM quasi-3D mapping of the distribution of orientation in the material provides a valuable information and may help understanding the fundamental phenomena which govern the growth of the material

  19. Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

    Science.gov (United States)

    Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

    2017-07-01

    4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

  20. Influence of processing conditions on the structure, composition and ferroelectric properties of sputtered PZT thin films on Ti-substrates

    Science.gov (United States)

    Bose, Ankita; Sreemany, Monjoy

    2014-01-01

    PZT thin (∼500 nm) films are synthesized on titanium (Ti) substrates by r.f. magnetron sputtering under various processing conditions. Present work aims to investigate the influence of working pressure and post-annealing temperature on the quality of the films. Phase evolution, surface morphology with local chemical composition and dielectric/ferroelectric properties of PZT films have been studied as the functions of working pressure and post-annealing temperature. A working pressure of ∼0.7 Pa and a post-crystallization temperature of ∼650 °C are found to be the optimum processing conditions for growing perovskite PZT films on Ti-substrates. Irrespective of processing conditions, however, all PZT films on Ti-substrates show poor electrical response. Depth dependent change in the chemical states of Pb, Zr, Ti and oxygen within the PZT films and across the PZT/Ti interfaces has also been scrutinized by XPS depth profiling. It is observed that within PZT films, Pb exists both in Pb2+ and Pb0 (metallic-Pb) states. Surfaces of the PZT films are found to be enriched with a thin (∼60 nm) Pb-deficient and Zr-rich pyrochlore/fluorite (Py/Fl) phase. Existence of a thin titanium oxide layer in the form of a TiO2/TiO stack has also been confirmed at the PZT/Ti interface. Processing conditions dependant structural modifications have been correlated with the dielectric and ferroelectric properties of the films.

  1. Ferroelectric phase transition in polycrystalline KTaO.sub.3./sub. thin film revealed by terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Skoromets, Volodymyr; Glinšek, S.; Bovtun, Viktor; Kempa, Martin; Petzelt, Jan; Kamba, Stanislav; Malič, B.; Kosec, M.; Kužel, Petr

    2011-01-01

    Roč. 99, č. 5 (2011), 052908/1-052908/3 ISSN 0003-6951 R&D Projects: GA ČR GD202/09/H041; GA AV ČR(CZ) IAA100100907 Grant - others:GAUK(CZ) SVV-2011-263303 Institutional research plan: CEZ:AV0Z10100520 Keywords : thin film * terahertz spectroscopy * ferroelectric phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.844, year: 2011 http://link.aip.org/link/?APL/99/052908

  2. Slow wave structures integrated with ferromagnetic and ferro-electric thin films for smart RF applications

    Science.gov (United States)

    Rahman, B. M. Farid

    Modern communications systems are following a common trend to increase the operational frequency, level of integration and number of frequency bands. Although 90-95% components in a cell phone are passives which take 80% of the total board area. High performance RF passive components play limited role and are desired towards this technological advancement. Slow wave structure is one of the most promising candidates to design compact RF and mm-Wave passive components. Slow wave structures are the specially designed transmission line realized by placing the alternate narrow and wide signal conductors in order to reduce the physical size of the components. This dissertation reports multiband slow wave structures integrated with ferromagnetic and ferroelectric thin films and their RF applications. A comparative study on different types of coplanar wave-guide (CPW) slow wave structures (SWS) has been demonstrated for the first time. Slow wave structures with various shapes have been investigated and optimized with various signal conductor shapes, ground conductor shapes and pitch of the sections. Novel techniques i.e. the use of the defected ground structure and the different signal conductor length has been implemented to achieve higher slow wave effect with minimum loss. The measured results have shown the reduction of size over 43.47% and 37.54% in the expense of only 0.27dB and 0.102dB insertion loss respectively which can reduce the area of a designed branch line coupler by 68% and 61% accordingly. Permalloy (Py) is patterned on top of the developed SWS for the first time to further increase the slow wave effect and provide tunable inductance value. High frequency applications of Py are limited by its ferro-magnetic resonance frequency since the inductance value decreases beyond that. Sub-micrometer patterning of Py has increased FMR frequency until 6.3GHz and 3.2GHz by introducing the shape anisotropy. For the SWS with patterned Py, the size of the quarter

  3. Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis

    Science.gov (United States)

    Bi, Han; Sun, Qingqing; Zhao, Xuebing; You, Wenbin; Zhang, David Wei; Che, Renchao

    2018-04-01

    Recently, non-volatile semiconductor memory devices using a ferroelectric Hf0.5Zr0.5O2 film have been attracting extensive attention. However, at the nano-scale, the phase structure remains unclear in a thin Hf0.5Zr0.5O2 film, which stands in the way of the sustained development of ferroelectric memory nano-devices. Here, a series of electron microscopy evidences have illustrated that the interfacial strain played a key role in inducing the orthorhombic phase and the distorted tetragonal phase, which was the origin of the ferroelectricity in the Hf0.5Zr0.5O2 film. Our results provide insight into understanding the association between ferroelectric performances and microstructures of Hf0.5Zr0.5O2-based systems.

  4. Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

    KAUST Repository

    Nayak, Pradipta K.

    2012-06-22

    High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.

  5. Ferroelectric domain structures of epitaxial CaBi2Nb2O9 thin films on single crystalline Nb doped (1 0 0) SrTiO3 substrates

    Science.gov (United States)

    Ahn, Yoonho; Seo, Jeong Dae; Son, Jong Yeog

    2015-07-01

    Epitaxial CaBi2Nb2O9 (CBNO) thin films were deposited on Nb-doped SrTiO3 substrates. The CBNO thin films as a lead-free ferroelectric material exhibit a good ferroelectric property with the remanent polarization of 10.6 μC/cm2. In the fatigue resistance test, the CBNO thin films have no degradation in polarization up to 1×1012 switching cycles, which is applicable for non-volatile ferroelectric random access memories (FeRAMs). Furthermore, piezoresponse force microscopy study (PFM) reveals that the CBNO thin films have larger ferroelectric domain structures than those of PbTiO3 thin films. From the Landau, Lifshiftz, and Kittel's scaling law, it is inferred that the domain wall energy of CBNO thin films is probably very similar to that of the PbTiO3 thin films.

  6. Local electric field screening in bi-layer graphene devices

    Directory of Open Access Journals (Sweden)

    Vishal ePanchal

    2014-02-01

    Full Text Available We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG and bi-layer graphene (2LG devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing amounts of 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme.

  7. Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures)

    Science.gov (United States)

    Pintilie, I.; Pintilie, L.; Filip, L. D.; Nistor, L. C.; Ghica, C.

    Oxide materials are becoming of increasing interest due to their large variety of physical properties such as dielectric, magnetism, superconductivity, conductivity, ferroelectricity, multiferroism, etc. In addition, interfacing oxides with other materials is conferring new or better device functionalities. The main physical properties of oxides interfaces and their impact on the electrical properties of interest for microelectronic applications are presented. Further on, this subchapter is also devoted to the investigation and understanding of interface effects observed in heterostructures containing linear (SiO2) and non-linear (ferroelectrics) dielectrics in combination with wide-band gap semiconductor materials (e.g. ZnO and SiC) with special emphasis on size effects, interface quality and the opportunity to control the emergent phenomena in Metal-Oxide-Semiconductor (MOS) and Metal-Ferroelectric-Semiconductor (MFS) materials systems.

  8. Bi-layer structure of counterstreaming energetic electron fluxes: a diagnostic tool of the acceleration mechanism in the Earth's magnetotail

    Directory of Open Access Journals (Sweden)

    D. V. Sarafopoulos

    2010-02-01

    Full Text Available For the first time we identify a bi-layer structure of energetic electron fluxes in the Earth's magnetotail and establish (using datasets mainly obtained by the Geotail Energetic Particles and Ion Composition (EPIC/ICS instrument that it actually provides strong evidence for a purely spatial structure. Each bi-layer event is composed of two distinct layers with counterstreaming energetic electron fluxes, parallel and antiparallel to the local ambient magnetic field lines; in particular, the tailward directed fluxes always occur in a region adjacent to the lobes. Adopting the X-line as a standard reconnection model, we determine the occurrence of bi-layer events relatively to the neutral point, in the substorm frame; four (out of the shown seven events are observed earthward and three tailward, a result implying that four events probably occurred with the substorm's local recovery phase. We discuss the bi-layer events in terms of the X-line model; they add more constraints for any candidate electron acceleration mechanism. It should be stressed that until this time, none proposed electron acceleration mechanism has discussed or predicted these layered structures with all their properties. Then we discuss the bi-layer events in terms of the much promising "akis model", as introduced by Sarafopoulos (2008. The akis magnetic field topology is embedded in a thinned plasma sheet and is potentially causing charge separation. We assume that as the Rc curvature radius of the magnetic field line tends to become equal to the ion gyroradius rg, then the ions become non-adiabatic. At the limit Rc=rg the demagnetization process is also under way and the frozen-in magnetic field condition is violated by strong wave turbulence; hence, the ion particles in this geometry are stochastically scattered. In addition, ion diffusion probably takes place across the magnetic field, since an intense pressure gradient is directed earthward; hence, ions are ejected tailward

  9. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  10. Ferroelectric size effects in multiferroic BiFeO3 thin films

    NARCIS (Netherlands)

    Chu, Y.H.; Zhao, T.; Cruz, M.P.; Zhan, Q.; Yang, P.L.; Martin, L.W.; Huijben, Mark; Yang, C.H.; Zavaliche, F.; Zheng, H.; Ramesh, R.

    2007-01-01

    Ferroelectric size effects in multiferroic BiFeO3 have been studied using a host of complementary measurements. The structure of such epitaxial films has been investigated using atomic force microscopy, transmission electron microscopy, and x-ray diffraction. The crystal structure of the films has

  11. Growth and characterization of epitaxial thin films and multiferroic heterostructures of ferromagnetic and ferroelectric materials

    Science.gov (United States)

    Mukherjee, Devajyoti

    Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

  12. Thermal conductivity of SrBi.sub.2./sub.Nb.sub.2./sub.O.sub.9./sub. ferroelectric thin films

    Czech Academy of Sciences Publication Activity Database

    Boffoué, M.O.; Jacquot, A.; Duclère, L.-R.; Guilloux-Viry, M.; Hejtmánek, Jiří; Dauscher, A.; Lenoir, B.

    2006-01-01

    Roč. 89, - (2006), 092904/1-092904/3 ISSN 0003-6951 Grant - others:MŠMT, FR(XE) BARRANDE 2005-2006-020-1 Institutional research plan: CEZ:AV0Z10100521 Keywords : thermal conductivity * ferroelectric thin film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.977, year: 2006

  13. High energy storage responses in all-oxide epitaxial relaxor ferroelectric thin films with the coexistence of relaxor and antiferroelectric-like behaviors

    NARCIS (Netherlands)

    Nguyen, Chi T.Q.; Nguyen, Duc Minh; Vu, H.T.; Houwman, Evert Pieter; Vu, Hung N.; Rijnders, A.J.H.M.

    2017-01-01

    Relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films have been epitaxially grown via pulsed laser deposition on SrRuO3/SrTiO3 single crystal with different orientations. The high recoverable energy-storage density and energy-storage efficiency in the epitaxial PLZT thin films are

  14. Two-dimensional ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L M; Fridkin, Vladimir M; Palto, Sergei P [A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federaion (Russian Federation); Bune, A V; Dowben, P A; Ducharme, Stephen [Department of Physics and Astronomy, Behlen Laboratory of Physics, Center for Materials Research and Analysis, University of Nebraska-Linkoln, Linkoln, NE (United States)

    2000-03-31

    The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of {approx}200 A and the thinnest ferroelectric films were {approx}200 A thick, macroscopic sizes on an atomic scale. Langmuir-Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir-Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric-paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the two-dimensional layers. (reviews of topical problems)

  15. Ferroelectric properties of lead-free polycrystalline CaBi{sub 2}Nb{sub 2}O{sub 9} thin films on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Yoonho, E-mail: yahn@khu.ac.kr; Son, Jong Yeog, E-mail: jyson@khu.ac.kr [Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin 446-701 (Korea, Republic of); Jang, Joonkyung [Department of Nanoenergy Engineering, Pusan National University, Busan 609-735 (Korea, Republic of)

    2016-03-15

    CaBi{sub 2}Nb{sub 2}O{sub 9} (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm{sup 2} (2P{sub r} ∼9.6 μC/cm{sup 2}), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.

  16. Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films

    Science.gov (United States)

    Lu, Zeng-Xing; Song, Xiao; Zhao, Li-Na; Li, Zhong-Wen; Lin, Yuan-Bin; Zeng, Min; Zhang, Zhang; Lu, Xu-Bing; Wu, Su-Juan; Gao, Xing-Sen; Yan, Zhi-Bo; Liu, Jun-Ming

    2015-10-01

    We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage (I-V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures (> 253 K), the I-V behaviors are governed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of > 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272078 and 51332007), the State Key Program for Basic Research of China (Grant No 2015CB921202), the Guangdong Provincial Universities and Colleges Pearl River Scholar Funded Scheme, China (2014), the International Science & Technology Cooperation Platform Program of Guangzhou, China (Grant No. 2014J4500016), and the Program for Changjiang Scholars and Innovative Research Team in University of China (Grant No. IRT1243).

  17. Room temperature ferromagnetic and ferroelectric properties of Bi1−xCaxMnO3 thin films

    Directory of Open Access Journals (Sweden)

    K. S. Pugazhvadivu

    2014-11-01

    Full Text Available Bi1−xCaxMnO3 (BCMO thin films with x = 0, 0.1, 0.2, 0.3 and 0.4 are successfully deposited on the n-type Si (100 substrate at two different temperatures of 400 °C and 800 °C using RF magnetron sputtering. The stoichiometry of the films and oxidation state of the elements have been described by X-ray photoelectron spectroscopy analysis. Dielectric measurement depicts the insulating property of BCMO films. Magnetic and ferroelectric studies confirm the significant enhancement in spin orientation as well as electric polarization at room temperature due to incorporation of Ca2+ ions into BiMnO3 films. The BCMO (x = 0.2 film grown at 400 °C shows better magnetization (Msat and polarization (Pswith the measured values of 869 emu / cc and 6.6 μC/ cm2 respectively than the values of the other prepared films. Thus the realization of room temperature ferromagnetic and ferroelectric ordering in Ca2+ ions substituted BMO films makes potentially interesting for spintronic device applications.

  18. Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Matzen, Sylivia [University of Groningen, The Netherlands; Nesterov, Okeksiy [ORNL; Rispens, Gregory [University of Groningen, The Netherlands; Heuver, J. A. [University of Groningen, The Netherlands; Bark, C [University of Wisconsin, Madison; Biegalski, Michael D [ORNL; Christen, Hans M [ORNL; Noheda, Beatriz [University of Groningen, The Netherlands

    2014-01-01

    Nanoscale ferroelectrics, the active elements of a variety of nanoelectronic devices, develop denser and richer domain structures than the bulk counterparts. With shrinking device sizes understanding and controlling domain formation in nanoferroelectrics is being intensely studied. Here we show that a precise control of the epitaxy and the strain allows stabilizing a hierarchical domain architecture in PbxSr1-xTiO3 thin films, showing periodic, purely in-plane polarized, ferroelectric nano-domains that can be switched by a scanning probe.

  19. Effect of Top Electrode Material on Radiation-Induced Degradation of Ferroelectric Thin Films

    Science.gov (United States)

    2016-03-31

    film applications, mostly due to its very high conductivity, maintained through the high processing temperatures (~700C) required for processing...were carried out at 1 kHz at fields up to 400 kV/cm using a P-PM2 Radiant ferroelectric test system. Measurements to probe the converse, effective...electrodes shown below. Shaded regions indicate 95% confidence interval from the mean for all measurements. Irradiation of films with both electrode

  20. Doping of bi-layer graphene by gradually polarizing a ferroelectric polymer

    Czech Academy of Sciences Publication Activity Database

    Kalbáč, Martin; Kong, J.; Dresselhaus, M. S.

    2013-01-01

    Roč. 250, č. 12 (2013), s. 2649-2652 ISSN 0370-1972 R&D Projects: GA MŠk LH13022; GA ČR(CZ) GAP208/12/1062 Institutional support: RVO:61388955 Keywords : doping * graphene * Raman spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.605, year: 2013

  1. Electrical conduction mechanism in BiFeO3-based ferroelectric thin-film capacitors: Impact of Mn doping

    Directory of Open Access Journals (Sweden)

    Hiroki Matsuo

    2015-12-01

    Full Text Available Electrical conduction properties of SrRuO3(SRO/BiFeO3(BFO/SRO and SRO/10% Mn-doped BFO(BFMO/SRO ferroelectric thin-film capacitors are investigated. The BFO capacitors exhibit a switchable diode effect accompanied by a conduction change from ohmic to space-charge-limited current with increasing external field. In contrast, the BFMO capacitors show only an ohmic conduction, arising from a considerable reduction in depletion layer width at the SRO/BFMO interfaces. These results suggest that the diode property can be tuned by Mn content in the BFO film. Our study opens the possibility of controlling the diode effect in BFO-based devices by a dilute Mn doping.

  2. Growth of ferroelectric CaBi_2Ta_2O9 Thin Film Using rf Magnetron Sputtering

    Science.gov (United States)

    Peng, Jin; Huang, Z. J.; Jiang, Q. D.; Brazdeikis, A.; Zhang, Z. H.; Liu, J. R.; Chu, W. K.; Chu, C. W.

    1998-03-01

    Ferroelectric CaBi_2Ta_2O_9(CBTO) films were deposited at various temperature on SrTiO_3(001) and SrTiO_3(111), MgO(001) and R-cut sapphire and Pt-buffered SrTiO3 (001) and SrTi O_3(111), MgO(001) and R-cut sapphire substrate by rf magnetron sputtering. It is found that crystallinity and chemical composition of CBTO thin films were strongly dependent on substrate and temperature. X-ray diffraction, scanning electron microscopy, atomic force microscopy and rutherford backscattering were employed to examine the structure, surface morphology and composition. In addition, comparisons of growth orientation and stoichiometry between CBTO and SrBi_2Ta_2O9 were made.

  3. Highly oriented ferroelectric CaBi2Nb2O9 thin films deposited on Si(100) by pulsed laser deposition

    Science.gov (United States)

    Desu, S. B.; Cho, H. S.; Joshi, P. C.

    1997-03-01

    We report the successful deposition of highly c-axis oriented CaBi2Nb2O9 (CBN) thin films directly on p-type Si(100) substrates by pulsed laser deposition. The CBN thin films exhibited good structural, dielectric, and CBN/Si interface characteristics. The electrical measurements were conducted on CBN thin films in a metal-ferroelectric-semiconductor (MFS) capacitor configuration. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 80 and 0.051, respectively. The leakage current of the MFS capacitor structure was governed by the Schottky barrier conduction mechanism and the leakage current density was lower than 10-7A/cm2 at an applied electric field of 100 kV/cm. The capacitance-voltage measurements on MFS capacitors established good ferroelectric polarization switching characteristics.

  4. Photo-assisted non-destructive readout of thin-film ferroelectric memories

    International Nuclear Information System (INIS)

    Gu Junxing; Jin Kuijuan

    2015-01-01

    By combining piezoelectric force microscopy with scanning surface potential microscopy and introducing a laser beam, we have demonstrated that the surface potential contrast of BiFeO 3 films can be recovered by light illumination. The recovering mechanism is understood based on the redistribution of the photo-induced charges driven by the internal electric field. Furthermore, we have created a 12-cell memory pattern based on a BiFeO 3 film to show the feasibility of such photo-assisted non-volatile and non-destructive readout of the ferroelectric memory. (authors)

  5. Switching of both local ferroelectric and magnetic domains in multiferroic Bi0.9La0.1FeO3 thin film by mechanical force.

    Science.gov (United States)

    Jia, Tingting; Kimura, Hideo; Cheng, Zhenxiang; Zhao, Hongyang

    2016-08-22

    Cross-coupling of ordering parameters in multiferroic materials by multiple external stimuli other than electric field and magnetic field is highly desirable from both practical application and fundamental study points of view. Recently, mechanical force has attracted great attention in switching of ferroic ordering parameters via electro-elastic coupling in ferroelectric materials. In this work, mechanical force induced both polarization and magnetization switching were visualized in a polycrystalline multiferroic Bi0.9La0.1FeO3 thin film using a scanning probe microscopy system. The piezoresponse force microscopy and magnetic force microscopy responses suggest that both the ferroelectric domains and the magnetic domains in Bi0.9La0.1FeO3 film could be switched by mechanical force as well as by electric field. High tip stress applied on our thin film is demonstrated as able to induce ferroelastic switching and thus induce both ferroelectric dipole and magnetic spin flipping, as a consequence of electro-elastic coupling and magneto-electric coupling. The demonstration of mechanical force control of both the ferroelectric and the magnetic domains at room temperature provides a new freedom for manipulation of multiferroics and could result in devices with novel functionalities.

  6. Investigations on the effects of electrode materials on the device characteristics of ferroelectric memory thin film transistors fabricated on flexible substrates

    Science.gov (United States)

    Yang, Ji-Hee; Yun, Da-Jeong; Seo, Gi-Ho; Kim, Seong-Min; Yoon, Myung-Han; Yoon, Sung-Min

    2018-03-01

    For flexible memory device applications, we propose memory thin-film transistors using an organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator and an amorphous In-Ga-Zn-O (a-IGZO) active channel. The effects of electrode materials and their deposition methods on the characteristics of memory devices exploiting the ferroelectric field effect were investigated for the proposed ferroelectric memory thin-film transistors (Fe-MTFTs) at flat and bending states. It was found that the plasma-induced sputtering deposition and mechanical brittleness of the indium-tin oxide (ITO) markedly degraded the ferroelectric-field-effect-driven memory window and bending characteristics of the Fe-MTFTs. The replacement of ITO electrodes with metal aluminum (Al) electrodes prepared by plasma-free thermal evaporation greatly enhanced the memory device characteristics even under bending conditions owing to their mechanical ductility. Furthermore, poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) was introduced to achieve robust bending performance under extreme mechanical stress. The Fe-MTFTs using PEDOT:PSS source/drain electrodes were successfully fabricated and showed the potential for use as flexible memory devices. The suitable choice of electrode materials employed for the Fe-MTFTs is concluded to be one of the most important control parameters for highly functional flexible Fe-MTFTs.

  7. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

    Science.gov (United States)

    Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

    2018-03-01

    For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical–electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this. ).

  8. Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

    Energy Technology Data Exchange (ETDEWEB)

    Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

    2018-01-25

    For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.

  9. Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method

    Science.gov (United States)

    Othmani, Cherif; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi

    2016-09-01

    The propagation of Rayleigh-Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh-Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

  10. Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method

    Energy Technology Data Exchange (ETDEWEB)

    Othmani, Cherif, E-mail: othmanicheriffss@gmail.com; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi

    2016-09-01

    The propagation of Rayleigh–Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh–Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

  11. Preparation of zigzag-free ferroelectric liquid crystal between rubbed polyimide thin films

    International Nuclear Information System (INIS)

    Zheng, W J; Wang, C C; Lu, C H

    2009-01-01

    Conditions for producing a zigzag-free chiral smectic C phase ferroelectric liquid crystal layer have been investigated based on the consideration of the surface free energy of rubbed polyimide alignment films. Rubbing breaks the azimuthal uniformity in the surface free energy of the polymer alignment layer and induces in-line anisotropy in the surface free energy in the rubbing direction. This anisotropy in the surface free energy is found to have a significant effect on the formation of zigzag lines. Properly rubbing the polymer surface can eliminate or reduce the difference between the surface free energies along and against the rubbing direction, respectively, and favours the formation of a single domain chevron structure and a zigzag-free smectic C layer in the cell.

  12. Preparation of Layer-Structured CaBi2Ta2O9 Ferroelectric Thin Films through a Triple Alkoxide Route

    Science.gov (United States)

    Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi

    2000-09-01

    A triple alkoxide solution for CaBi2Ta2O9 (CBT) thin films was prepared. CBT thin films were deposited on Pt-passivated silicon and Pt-passivated quartz glass substrates. The thin films on Pt-passivated silicon crystallized to form the perovskite structure at low temperatures and showed preferred orientation along the c-axis. The thin films did not show ferroelectric P-E hysteresis loops. In contrast, the 750°C-annealed thin film on Pt-passivated quartz glass showed random orientation and exhibited excellent P-E hysteresis loops. The remanent polarization (Pr) and the coercive electric field (Ec) at 13 V were 6.9 μC/cm2 and 170 kV/cm, respectively.

  13. Ferroelectric properties of alkoxy-derived CaBi2Ta2O9 thin films

    Science.gov (United States)

    Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi

    2000-09-01

    CaBi2Ta2O9 thin films were deposited on Pt-passivated quartz glass substrates. The 750 °C-annealed thin film was a single phase of layer-structured perovskite and showed random orientation. The thin film exhibited a P-E hysteresis loop. The remanent polarization (Pr) and coercive electric field (Ec) at 13 V were 6 μC/cm2 and 160 kV/cm, respectively. The polarization did not show fatigue after 2×1010 switching cycles.

  14. 0.6ST-0.4NBT thin film with low level Mn doping as a lead-free ferroelectric capacitor with high energy storage performance

    Science.gov (United States)

    Zhang, Yulei; Li, Weili; Qiao, Yulong; Zhao, Yu; Wang, Zhenyu; Yu, Yang; Xia, Hetian; Li, Ze; Fei, Weidong

    2018-02-01

    Srx(Na0.5Bi0.5)1-xTi0.99Mn0.01O3 (x = 0.2, 0.4, 0.6, and 0.8) relaxor ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates by the Sol-Gel method. The influence of the Sr content on the microstructures, ferroelectric properties, and energy-storage performances of the thin films were investigated in detail. The Sr0.6(Na0.5Bi0.5)0.4Ti0.99Mn0.01O3 thin film exhibits very slim hysteresis loops with the highest electric breakdown field strength due to reduced oxygen vacancies. Owing to the high breakdown field strength of 3134.3 kV/cm, the Sr0.6(Na0.5Bi0.5)0.4Ti0.99Mn0.01O3 thin film shows a giant recoverable energy-storage density of 33.58 J/cm3. These results indicate that the Sr0.6(Na0.5Bi0.5)0.4Ti0.99Mn0.01O3 thin film is promising for applications of advanced capacitors with high energy-storage density.

  15. Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates

    Directory of Open Access Journals (Sweden)

    D.H. Minh

    2016-03-01

    Full Text Available In a ferroelectric-gate thin film transistor memory (FGT type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZT films crystallized at 450, 500 and 550 °C, instead of at conventional high temperatures (≥600 °C. Investigation of the crystalline structure and electrical properties indicated that the PZT film, crystallized at 500 °C, was suitable for FGT fabrication because of a high (111 orientation, large remnant polarization of 38 μC/cm2 on SiO2/Si substrate and 17.8 μC/cm2 on glass, and low leakage current of 10−6 A/cm2. In sequence, we successfully fabricated FGT with all processes below 500 °C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of 105, field-effect mobility of 0.092 cm2 V−1 s−1, and retention time of 1 h.

  16. Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

    Directory of Open Access Journals (Sweden)

    P. T. Tue

    2013-01-01

    Full Text Available We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT which uses solution-processed indium-tin-oxide (ITO and lead-zirconium-titanate (PZT film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1 a reduction of the charge injection and (2 an increase of effective coercive voltage dropped on the insulator.

  17. Ferroelectric materials and their applications

    CERN Document Server

    Xu, Y

    2013-01-01

    This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable

  18. Bi-layer plate-type acoustic metamaterials with Willis coupling

    Science.gov (United States)

    Ma, Fuyin; Huang, Meng; Xu, Yicai; Wu, Jiu Hui

    2018-01-01

    Dynamic effective negative parameters are principal to the representation of the physical properties of metamaterials. In this paper, a bi-layer plate-type unit was proposed with both a negative mass density and a negative bulk modulus; moreover, through analysis of these bi-layer structures, some important problems about acoustic metamaterials were studied. First, dynamic effective mass densities and the bulk modulus of the bi-layer plate-type acoustic structure were clarified through both the direct and the retrieval methods, and, in addition, the intrinsic relationship between the sound transmission (absorption) characteristics and the effective parameters was analyzed. Furthermore, the properties of dynamic effective parameters for an asymmetric bi-layer acoustic structure were further considered through an analysis of experimental data, and the modified effective parameters were then obtained through consideration of the Willis coupling in the asymmetric passive system. In addition, by taking both the clamped and the periodic boundary conditions into consideration in the bi-layer plate-type acoustic system, new perspectives were presented for study on the effective parameters and sound insulation properties in the range below the cut-off frequency. The special acoustic properties established by these effective parameters could enrich our knowledge and provide guidance for the design and installation of acoustic metamaterial structures in future sound engineering practice.

  19. Bi-layered calcium phosphate cement-based composite scaffold mimicking natural bone structure.

    Science.gov (United States)

    He, Fupo; Ye, Jiandong

    2013-08-01

    In this study, a core/shell bi-layered calcium phosphate cement (CPC)-based composite scaffold with adjustable compressive strength, which mimicked the structure of natural cortical/cancellous bone, was fabricated. The dense tubular CPC shell was prepared by isostatic pressing CPC powder with a specially designed mould. A porous CPC core with unidirectional lamellar pore structure was fabricated inside the cavity of dense tubular CPC shell by unidirectional freeze casting, followed by infiltration of poly(lactic-co-glycolic acid) and immobilization of collagen. The compressive strength of bi-layered CPC-based composite scaffold can be controlled by varying thickness ratio of dense layer to porous layer. Compared to the scaffold without dense shell, the pore interconnection of bi-layered scaffold was not obviously compromised because of its high unidirectional interconnectivity but poor three dimensional interconnectivity. The in vitro results showed that the rat bone marrow stromal cells attached and proliferated well on the bi-layered CPC-based composite scaffold. This novel bi-layered CPC-based composite scaffold is promising for bone repair.

  20. The effect of Nb doping on ferroelectric properties of PZT thin films prepared from polymeric precursors

    International Nuclear Information System (INIS)

    Souza, E.C.F.; Simoes, A.Z.; Cilense, M.; Longo, E.; Varela, J.A.

    2004-01-01

    Pure and Nb doped PbZr 0.4 Ti 0.6 O 3 thin films was prepared by the polymeric precursor method and deposited by spin coating on Pt/Ti/SiO 2 /Si (100) substrates and annealed at 700 deg. C. The films are oriented in (1 1 0) and (1 0 0) direction. The electric properties of PZT thin films show strong dependence of the crystallographic orientation. The P-E hysteresis loops for the thin film with composition PbZr 0.39 Ti 0.6 Nb 0.1 O 3 showed good saturation, with values for coercive field (E c ) equal to 60 KV cm -1 and for remanent polarization (P r ) equal to 20 μC cm -2 . The measured dielectric constant (ε) is 1084 for this film. These results show good potential for application in FERAM

  1. Multiscale numerical study on ferroelectric nonlinear response of PZT thin films (Conference Presentation)

    Science.gov (United States)

    Wakabayashi, Hiroki; Uetsuji, Yasutomo; Tsuchiya, Kazuyoshi

    2017-06-01

    PZT thin films have excellent performance in deformation precision and response speed, so it is used widely for actuators and sensors of Micro Electro Mechanical System (MEMS). Although PZT thin films outputs large piezoelectricity at morphotropic phase bounfary (MPB), it shows a complicated hysteresis behavior caused by domain switching and structural phase transition between tetragonal and rhombohedral. In general, PZT thin films have some characteristic crystal morphologies. Additionally mechanical strains occur by lattice mismatch with substrate. Therefore it is important for fabrication and performance improvement of PZT thin films to understand the relation between macroscopic hysteresis response and microstructural changes. In this study, a multiscale nonlinear finite element simulation was proposed for PZT thin films at morphotropic phase boundary (MPB) on the substrate. The homogenization theory was employed for scale-bridging between macrostructure and microstructure. Figure 1 shows the proposed multiscale nonlinear simulation [1-3] based on the homogenization theory. Macrostructure is a homogeneous structure to catch the whole behaviors of actuators and sensors. And microstructure is a periodic inhomogeneous structure consisting of domains and grains. Macrostructure and microstructure are connected perfectly by homogenization theory and are analyzed by finite element method. We utilized an incremental form of fundamental constitutive law in consideration with physical property change caused by domain switching and structural phase transition. The developed multiscale finite element method was applied to PZT thin films with lattice mismatch strain on the substrate, and the relation between the macroscopic hysteresis response and microscopic domain switching and structural phase transition were investigated. Especially, we discuss about the effect of crystal morphologies and lattice mismatch strain on hysteresis response.

  2. Platinum-assisted phase transition in bismuth-based layer-structured ferroelectric CaBi4Ti4O15 thin films

    Science.gov (United States)

    Kato, Kazumi; Suzuki, Kazuyuki; Fu, Desheng; Nishizawa, Kaori; Miki, Takeshi

    2002-10-01

    The phase transition of nonferroelectric pyrochlore to ferroelectric perovskite in CaBi4Ti4O15 thin films depends on platinum bottom electrodes. Rather than the strain and crystallinity of the bottom electrode, matching of the atomic arrangement to the Ca-Bi-Ti-O thin films is predominant. CaBi4Ti4O15 thin films crystallized on (200)-oriented platinum at 650 degC showed c-axis orientation. In contrast, thin films crystallized on highly crystalline (111)-oriented platinum at the same temperature contained pyrochlore grains which were about several tens of nanometers in diameter and located in the interface region. They showed P-V hysteresis loops. The remanent polarization and coercive electric field depended on platinum top electrode size.

  3. Optical and microwave properties of CaBi4Ti4O15 ferroelectric thin films deposited by pulsed laser deposition

    Science.gov (United States)

    Emani, Sivanagi Reddy; Joseph, Andrews; Raju, K. C. James

    2016-05-01

    Transparent CaBi4Ti4O15 (CBTi) ferroelectric thin films are deposited by pulsed laser deposition method. The structural, optical and microwave dielectric properties were investigated. CBTi thin films had polycrystalline bismuth-layered perovskite structure and exhibited excellent optical properties. The X-ray analysis of the thin film demonstrates the phase formation and crystallinity. The optical transmission studies show that film is transparent in VIS-NIR region with a direct band gap of 3.53 EV. Morphological studies provide surface roughness as 3 mm. Dielectric constant and loss factors were 48 and 0.060 respectively, at 10GHz. These results suggest that CBTi thin films are promising multifunctional materials for applications in optoelectronic and microwave devices.

  4. Cloaking magnetic field and generating electric field with topological insulator and superconductor bi-layer sphere

    Science.gov (United States)

    Xu, Jin

    2017-12-01

    When an electric field is applied on a topological insulator, not only the electric field is generated, but also the magnetic field is generated, vice versa. I designed topological insulator and superconductor bi-layer magnetic cloak, derived the electric field and magnetic field inside and outside the topological insulator and superconductor sphere. Simulation and calculation results show that the applied magnetic field is screened by the topological insulator and superconductor bi-layer, and the electric field is generated in the cloaked region.

  5. Microstructural Evolution and Domain Structures of Flux-grown Ferroelectric Thin Films

    Science.gov (United States)

    Burch, Matthew James

    Barium titanate is one of the most commonly utilized dielectric materials for commercial applications. As devices continue to scale smaller, it is necessary to find processing routes that allow for the integration of high-permittivity barium titanate into the thin film geometry. In the bulk, high permittivity barium titanate can be produced at high processing temperatures (>1250°C). This is several hundred degrees higher than many low temperature substrates are able to withstand, which makes integration of high-permittivity barium titanate onto these substrates a challenge.One method to lower the processing temperature and maintain bulk-like permittivity of barium titanate thin films is through the addition of a liquid forming flux. The fluxing agent increases the kinetics of the system while encouraging densification. This increase in kinetics results in large-grained, dense samples, with high dielectric properties at relatively low processing temperatures. In this dissertation, the underlying mechanisms of how the flux system actually impacts the microstructural evolution of physically vapor deposited barium titanate thin films on sapphire substrates is explored. The flux-system utilized is the barium-borate system (BaOB2O3). It will be shown that the flux system results in large-grained, dense barium titanate thin films grown on sapphire. However, the evolution of the microstructure depends on a complex interaction between the liquid forming flux, a reaction between the sapphire substrate and barium titanate, the resulting reactionary phase of BaAl2O4, and {111}-barium titanate twins. (Abstract shortened by ProQuest.).

  6. Structural and ferroelectric properties of Sr1−xBaxBi2Nb2O9 thin films obtained by dip-coating

    Directory of Open Access Journals (Sweden)

    Y. González-Abreu

    2017-10-01

    Full Text Available The paper presents the structural and ferroelectric results for Sr1−xBaxBi2Nb2O9(x=0.30; 0.85 thin films, which were obtained by using dip-coating. The solutions containing the desirable ions were prepared from the powders of the previous studied ceramic samples. The films were deposited at room temperature on Fluorine-doped Tin Oxide (FTO substrates and submitted to a heat treatment for crystallization. The films were characterized by using scanning microscopy electronic, energy dispersive spectroscopy and ellipsometry. Hysteresis ferroelectric loops were obtained, at room temperature, by using a Sawyer-Tower circuit at several frequencies. A well-defined grain structure was observed for both compositions. The energy dispersive spectroscopy (EDS measurements revealed the presence of the corresponding elements from the chemical composition of the ceramic systems. The band-gap energy was around 3.3eV for both samples. Typical hysteresis loops for normal and relaxor ferroelectrics were obtained for x=0.30 and 0.85, respectively.

  7. Improved Modeling Approaches for Constrained Sintering of Bi-Layered Porous Structures

    DEFF Research Database (Denmark)

    Tadesse Molla, Tesfaye; Frandsen, Henrik Lund; Esposito, Vincenzo

    2012-01-01

    Shape instabilities during constrained sintering experiment of bi-layer porous and dense cerium gadolinium oxide (CGO) structures have been analyzed. An analytical and a numerical model based on the continuum theory of sintering has been implemented to describe the evolution of bow and densificat...

  8. CaBi2Ta2O9 ferroelectric thin films prepared by pulsed laser deposition

    Science.gov (United States)

    Das, Rasmi R.; Rodriguéz, R. J.; Katiyar, Ram S.; Krupanidhi, S. B.

    2001-05-01

    Thin films of CaBi2Ta2O9 (CBT) were deposited on Pt/TiO2/SiO2/Si substrates using the pulsed laser deposition technique at temperatures ranging from 500 to 700 °C. The presence of (115) and (0010¯) orientations confirm the phase formation at the lower temperature (500 °C). Microstructure evolution of CBT films with oxygen pressure of 100-200 mTorr at a substrate temperature of 650 °C shows that the films deposited at lower pressure have a relatively smaller grain size and less surface roughness. The films grown at 650 °C exhibited a maximum polarization of (2Pm) 17 μC/cm2, remanent polarization of (2Pr) 8 μC/cm2 and coercive field of (Ec) 128 kV/cm, with fatigue endurance up to 1010 switching cycles. The higher dielectric constant (˜115 at 100 kHz) with a relatively lower dissipation factor (0.02) at higher growth temperature (700 °C) was explained by the increased grain size. The higher leakage current density (˜10-7A/cm2) at higher deposition temperature is attributed to the interfacial diffusion of the film and the substrate.

  9. Bi-layer sandwich film for antibacterial catheters.

    Science.gov (United States)

    Franz, Gerhard; Schamberger, Florian; Zare, Hamideh Heidari; Bröskamp, Sara Felicitas; Jocham, Dieter

    2017-01-01

    Background: Approximately one quarter of all nosocomial infections can be attributed to the urinary tract. The infections are supposed to be mainly caused by implantations of urethral catheters and stents. A new catheter design is introduced with the aim to lower the high number of nosocomial urethral infections. In order to avoid limitations to use, the design is first applied to conventional commercially available balloon catheters. Results: The main feature of the design is a sandwich layer on both sides of the catheter wall, which is composed of a fragmented base layer of silver capped by a thin film of poly( p -xylylene). This top layer is mainly designed to release a controlled amount of Ag + ions, which is bactericidal, but not toxic to humans. Simultaneously, the lifetime is prolonged to at least one year. The base layer is electrolessly deposited applying Tollens' reagens, the cap layer is deposited by using chemical vapor deposition. Conclusion: The three main problems of this process, electroless deposition of a fragmented silver film on the surface of an electrically insulating organic polymer, irreproducible evaporation during heating of the precursor, and exponential decrease of the layer thickness along the capillary, have been solved trough the application of a simple electrochemical reaction and two standard principles of physics: Papin's pot and the principle of Le Chatelier.

  10. Bi-layer sandwich film for antibacterial catheters

    Directory of Open Access Journals (Sweden)

    Gerhard Franz

    2017-09-01

    Full Text Available Background: Approximately one quarter of all nosocomial infections can be attributed to the urinary tract. The infections are supposed to be mainly caused by implantations of urethral catheters and stents. A new catheter design is introduced with the aim to lower the high number of nosocomial urethral infections. In order to avoid limitations to use, the design is first applied to conventional commercially available balloon catheters.Results: The main feature of the design is a sandwich layer on both sides of the catheter wall, which is composed of a fragmented base layer of silver capped by a thin film of poly(p-xylylene. This top layer is mainly designed to release a controlled amount of Ag+ ions, which is bactericidal, but not toxic to humans. Simultaneously, the lifetime is prolonged to at least one year. The base layer is electrolessly deposited applying Tollens’ reagens, the cap layer is deposited by using chemical vapor deposition.Conclusion: The three main problems of this process, electroless deposition of a fragmented silver film on the surface of an electrically insulating organic polymer, irreproducible evaporation during heating of the precursor, and exponential decrease of the layer thickness along the capillary, have been solved trough the application of a simple electrochemical reaction and two standard principles of physics: Papin’s pot and the principle of Le Chatelier.

  11. Flexoelectricity in Nanoscale Ferroelectrics

    Science.gov (United States)

    Catalan, Gustau

    2012-02-01

    All ferroelectrics are piezoelectric and thus have an intrinsic coupling between polarization and strain. There exists an additional electromechanical coupling, however, between polarization and strain gradients. Strain gradients are intrinsically vectorial fields and, therefore, they can in principle be used to modify both the orientation and the sign of the polarization, thanks to the coupling known as flexoelectricity. Flexoelectricity is possible even in paraelectric materials, but is generally stronger in ferroelectrics on account of their high permittivity (the flexoelectric coefficient is proportional to the dielectric constant). Moreover, strain gradients can be large at the nanoscale due to the smallness of the relaxation length and, accordingly, strong flexoelectric effects can be expected in nanoscale ferroelectrics. In this talk we will present two recent results that highlight the above features. In the first part, I will show how polarization tilting can be achieved in a nominally tetragonal ferroelectric (PbTiO3) thanks to the internal flexoelectric fields generated in nano-twinned epitaxial thin films. Flexoelectricity thus offers a purely physical means of achieving rotated polarizations, which are thought to be useful for enhanced piezoelectricity. In the second part, we will show how the large strain gradients generated by pushing the sharp tip of an atomic force microscope against the surface of a thin ferroelectric film can be used to actively switch its polarity by 180^o. This enables a new concept for ``multiferroic'' memory operation in which the memory bits are written mechanically and read electrically.

  12. Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2009-05-01

    We report the effects of Ba, Ti, and Mn dopants on ferroelectric polarization and leakage current of (K0.44Na0.52Li0.04)(Nb0.84Ta0.1Sb0.06)O3 (KNN-LT-LS) thin films deposited by pulsed laser deposition. It is shown that donor dopants such as Ba2+, which increased the resistivity in bulk KNN-LT-LS, had an opposite effect in the thin film. Ti4+ as an acceptor B-site dopant reduces the leakage current by an order of magnitude, while the polarization values showed a slight degradation. Mn4+, however, was found to effectively suppress the leakage current by over two orders of magnitude while enhancing the polarization, with 15 and 23 μC/cm2 remanent and saturated polarization, whose values are ˜70% and 82% of the reported values for bulk composition. This phenomenon has been associated with the dual effect of Mn4+ in KNN-LT-LS thin film, by substituting both A- and B-site cations. A detailed description on how each dopant affects the concentrations of vacancies in the lattice is presented. Mn-doped KNN-LT-LS thin films are shown to be a promising candidate for lead-free thin films and applications.

  13. Ferroelectric properties of BaTiO3/PbZr0.2Ti.08O3 bilayer thin film

    Science.gov (United States)

    Salev, Pavel; Yang, Chun; Grigoriev, Alexei

    2014-03-01

    The thin film ferroelectric BaTiO3/PbZr0.2Ti0.8O3 bilayer was epitaxially grown on SrRuO3/SrTiO3 substrate by RF sputtering. Electrical measurements of polarization switching revealed two different switching regimes - a small ferroelectric hysteresis loop at low applied voltage and a larger loop at a high voltage. The measured dielectric permittivity corresponds to weak electrostatic coupling between two layers according to Landau-Ginsburg-Devonshire theory. This weak coupling may allow for independent polarization states to exist in individual layers. This can lead to stable head-to-head and tail-to-tail polarization domain configurations, which would explain the two switching regimes observed in electrical measurements. The compensation of polarization gradient across the interface can be explained by the enhancement of interface charge carrier density due to strong bending of electron energy bands. This work was supported by NSF award DMR-1057159.

  14. Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

    Science.gov (United States)

    Silva, J. P. B.; Sekhar, K. C.; Almeida, A.; Agostinho Moreira, J.; Pereira, M.; Gomes, M. J. M.

    2013-11-01

    The Ba0.8Sr0.2TiO3 thin films were grown on the Pt-Si substrate at 700 °C by using a pulsed laser deposition technique at different oxygen partial pressure (PO2) in the range of 1-20 Pa and their properties were investigated. It is observed that the PO2 during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO2, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance-voltage ( C- V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO2 of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field.

  15. Raman scattering spectra, magnetic and ferroelectric properties of BiFeO3-CoFe2O4 nanocomposite thin films structure

    Science.gov (United States)

    Tyagi, Mintu; Kumari, Mukesh; Chatterjee, Ratnamala; Sharma, Puneet

    2014-09-01

    Multiferroic (1-x)BiFeO3(BFO)-xCoFe2O4(CFO) (x=0 and 0.1) nanocomposite thin films were deposited on ITO coated glass using sol-gel spin coating technique. X-ray diffraction and transmission electron microscopy examinations confirm the coexistence of both perovskite BFO and spinel CFO phases. The effect of addition of CFO in BFO matrix has been studied on Raman spectra, magnetic and ferroelectric properties. BFO/CFO nanocomposite showed good magnetic behavior (Ms 40.3 emu/cm3, Mr 12.9 emu/cm3, Hc 90 Oe) with no change in ferroelectric properties. The strain analysis carried out by Raman spectroscopy reveals that both BFO and CFO bands are found to be strained in BFO/CFO composite nanostructure. The strain of the bands is discussed on the basis of lattice mismatch (interfacial stress) between CFO (a=0.839 nm) and BFO (a=0.396 nm) phases.

  16. Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layers

    International Nuclear Information System (INIS)

    Conde, J.C.; Chiussi, S.; Martin, E.; Gontad, F.; Fornarini, L.; Leon, B.

    2010-01-01

    In this manuscript, a 3-D axisymmetric model for the heteroepitaxial growth induced by irradiating thin patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers on Si (100) with pulsed UV-laser radiation, is presented. For reducing optimization steps, an efficient simulation of the laser induced processes that include rapid heating and solidification phenomena in the range of several tenth of nanoseconds, must be performed, if alloy composition and quality has to be adjusted. In this study, the effects of various laser energy densities on different amorphous Si/Ge bi-layer structures has been predicted and adjusted to obtain the desired Ge concentration profiles for applications as sacrificial layers, i.e. a Ge containing film buried under a Si rich surface layer. The numerical model includes the temperature dependent variations of the thermophysical properties and takes the coupled effects of temperature and hydrodynamic phenomena for a Boussinesq fluid, to estimate the element interdiffusion during the process and predicting the concentration profiles.

  17. KTa0.6Nb0.4O3 Ferroelectric Thin Film Behavior at Microwave Frequencies for Tunable Applications

    OpenAIRE

    Laur, Vincent; Rousseau, Anthony; Tanné, Gérard; Laurent, Paul; Députier, Stéphanie; Guilloux-Viry, Maryline; Huret, Fabrice

    2006-01-01

    "©20xx IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."; International audience; In this study about the relationships between structural and microwave electrical properties of KTa1-xNbxO3 (KTN) ferroelectric materi...

  18. Fabrication of multi-electrode array platforms for neuronal interfacing with bi-layer lift-off resist sputter deposition

    International Nuclear Information System (INIS)

    Kim, Yong Hee; Kim, Gook Hwa; Baek, Nam Seob; Han, Young Hwan; Kim, Ah-Young; Chung, Myung-Ae; Jung, Sang-Don

    2013-01-01

    We report a bi-layer lift-off resist (LOR) technique in combination with sputter deposition of silicon dioxide (SiO 2 ) as a new passivation method in the fabrication of a multi-electrode array (MEA). Using the photo-insensitive LOR as a sacrificial bottom layer and the negative photoresist as a patterning top layer, and performing low-temperature sputter deposition of SiO 2 followed by lift-off, we could successfully fabricate damage-free indium-tin oxide (ITO) and Au MEA. The bi-layer LOR sputter deposition processed Au MEA showed an impedance value of 6 × 10 5 Ω (at 1 kHz), with good consistency over 60 electrodes. The passivation performance of the bi-layer LOR sputter-deposited SiO 2 was tested by electrodepositing Au nanoparticles (NPs) on the Au electrode, resulting in the well-confined and uniformly coated Au NPs. The bi-layer LOR sputter deposition processed ITO, Au, and Au NP-modified MEAs were evaluated and found to have a neuronal spike recording capability at a single unit level, confirming the validity of the bi-layer LOR sputter deposition as an effective passivation technique in fabrication of a MEA. These results suggest that the damage-free Au MEA fabricated with bi-layer LOR sputter deposition would be a viable platform for screening surface modification techniques that are available in neuronal interfacing. (technical note)

  19. Nano-scale ferroelectric memories

    International Nuclear Information System (INIS)

    Scott, J.F.

    1998-01-01

    Since 1986 there has been a minor renaissance in the study of ferroelectrics. Studied for a century in the form of single-crystals or bulk ceramics, ferroelectrics are now fully integrated in thin-film (100 nm or less) form in both Si and GaAs chips. Four embodiments have reached large-volume commercial production. A brief review of this field of device physics is given, emphasizing memory applications. (author)

  20. Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

  1. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures (Postprint)

    Science.gov (United States)

    2016-09-01

    reliable and compact devices. Attention has therefore been turned to magnetic/high-k dielectric bilayers such as Fe/MgO11,40, CoFe /MgO41,42, Co/GdOx20...VDF-TrFE)12, and CoFe /BST44, where the functionality is similar to recently proposed magnetic/high-k dielectric stacks but the associated volatile...polarization such as PZT, BiFeO3 , or doped HfO2. Our results thus provide a pathway towards ferroelectric switching of magnetism that could be useful for

  2. Bi-layer structure of counterstreaming energetic electron fluxes: a diagnostic tool of the acceleration mechanism in the Earth's magnetotail

    Directory of Open Access Journals (Sweden)

    D. V. Sarafopoulos

    2010-02-01

    Full Text Available For the first time we identify a bi-layer structure of energetic electron fluxes in the Earth's magnetotail and establish (using datasets mainly obtained by the Geotail Energetic Particles and Ion Composition (EPIC/ICS instrument that it actually provides strong evidence for a purely spatial structure. Each bi-layer event is composed of two distinct layers with counterstreaming energetic electron fluxes, parallel and antiparallel to the local ambient magnetic field lines; in particular, the tailward directed fluxes always occur in a region adjacent to the lobes. Adopting the X-line as a standard reconnection model, we determine the occurrence of bi-layer events relatively to the neutral point, in the substorm frame; four (out of the shown seven events are observed earthward and three tailward, a result implying that four events probably occurred with the substorm's local recovery phase. We discuss the bi-layer events in terms of the X-line model; they add more constraints for any candidate electron acceleration mechanism. It should be stressed that until this time, none proposed electron acceleration mechanism has discussed or predicted these layered structures with all their properties. Then we discuss the bi-layer events in terms of the much promising "akis model", as introduced by Sarafopoulos (2008. The akis magnetic field topology is embedded in a thinned plasma sheet and is potentially causing charge separation. We assume that as the Rc curvature radius of the magnetic field line tends to become equal to the ion gyroradius rg, then the ions become non-adiabatic. At the limit Rc=rg the demagnetization process is also under way and the frozen-in magnetic field condition is violated by strong wave turbulence; hence, the ion particles in this geometry are stochastically scattered. In addition, ion diffusion probably takes place across the magnetic field, since an

  3. Fatigue crack growth simulations of interfacial cracks in bi-layered FGMs using XFEM

    Science.gov (United States)

    Bhattacharya, S.; Singh, I. V.; Mishra, B. K.; Bui, T. Q.

    2013-10-01

    An investigation of fatigue crack growth of interfacial cracks in bi-layered materials using the extended finite element method is presented. The bi-material consists of two layers of dissimilar materials. The bottom layer is made of aluminium alloy while the upper one is made of functionally graded material (FGM). The FGM layer consists of 100 % aluminium alloy on the left side and 100 % ceramic (alumina) on the right side. The gradation in material property of the FGM layer is assumed to be exponential from the alloy side to the ceramic side. The domain based interaction integral approach is extended to obtain the stress intensity factors for an interfacial crack under thermo-mechanical load. The edge and centre cracks are taken at the interface of bi-layered material. The fatigue life of the interface crack plate is obtained using the Paris law of fatigue crack growth under cyclic mode-I, mixed-mode and thermal loads. This study reveals that the crack propagates into the FGM layer under all types of loads.

  4. Anisotropic carrier mobility in single- and bi-layer C3N sheets

    Science.gov (United States)

    Wang, Xueyan; Li, Qingfang; Wang, Haifeng; Gao, Yan; Hou, Juan; Shao, Jianxin

    2018-05-01

    Based on the density functional theory combined with the Boltzmann transport equation with relaxation time approximation, we investigate the electronic structure and predict the carrier mobility of single- and bi-layer newly fabricated 2D carbon nitrides C3N. Although C3N sheets possess graphene-like planar hexagonal structure, the calculated carrier mobility is remarkably anisotropic, which is found mainly induced by the anisotropic effective masses and deformation potential constants. Importantly, we find that both the electron and hole mobilities are considerable high, for example, the hole mobility along the armchair direction of single-layer C3N sheets can arrive as high as 1.08 ×104 cm2 V-1 s-1, greatly larger than that of C2N-h2D and many other typical 2D materials. Owing to the high and anisotropic carrier mobility and appropriate band gap, single- and bi-layer semiconducting C3N sheets may have great potential applications in high performance electronic and optoelectronic devices.

  5. Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor.

    Science.gov (United States)

    Pham, Hien Thu; Yang, Jin Ho; Lee, Don-Sung; Lee, Byoung Hun; Jeong, Hyun-Dam

    2016-03-23

    Barium titanate nanocrystals (BT NCs) were prepared under solvothermal conditions at 200 °C for 24 h. The shape of the BT NCs was tuned from nanodot to nanocube upon changing the polarity of the alcohol solvent, varying the nanosize in the range of 14-22 nm. Oleic acid-passivated NCs showed good solubility in a nonpolar solvent. The effect of size and shape of the BT NCs on the ferroelectric properties was also studied. The maximum polarization value of 7.2 μC/cm(2) was obtained for the BT-5 NC thin film. Dielectric measurements of the films showed comparable dielectric constant values of BT NCs over 1-100 kHz without significant loss. Furthermore, the bottom gate In2O3 NC thin film transistors exhibited outstanding device performance with a field-effect mobility of 11.1 cm(2) V(-1) s(-1) at a low applied gate voltage with BT-5 NC/SiO2 as the gate dielectric. The low-density trapped state was observed at the interface between the In2O3 NC semiconductor and the BT-5 NCs/SiO2 dielectric film. Furthermore, compensation of the applied gate field by an electric dipole-induced dipole field within the BT-5 NC film was also observed.

  6. Nanoscale fabrication of the ferroelectric polymer poly(vinylidene fluoride with trifluoroethylene) P(VDF-TrFE) 75:25 thin films by atomic force microscope nanolithography.

    Science.gov (United States)

    Vega, Omar; Delgado, David; Wong, Freddy; Gonzalez, Rosette; Rosa, Luis G

    2012-01-01

    Thin films of an organic ferroelectric system, poly(vinylidene fluoride with trifluoroethylene) P(VDF-TrFE, Kureha Corporation, Tokyo, Japan) 75:25 layers, have been deposited on highly ordered pyrolytic graphite and silicon dioxide by the horizontal Schaefer method of Langmuir-Blodgett techniques. It is possible to "shave" or mechanically displace small regions of the polymer film by using atomic force microscope nanolithography techniques such as nanoshaving, leaving swaths of the surface cut to a depth of 4 nm and 12 nm exposing the substrate. The results of fabricating stripes by nanoshaving two holes close to each other show a limit to the material "stripe" widths of an average of 153.29 nm and 177.67 nm that can be produced. Due to the lack of adhesion between the substrates and the polymer P(VDF-TrFE) film, smaller "stripes" of P(VDF-TrFE) cannot be produced, and it can be shown by the sequencing of nanoshaved regions that "stripes" of thin films can be removed. © Wiley Periodicals, Inc.

  7. The Nanostructure Formation and Growth Evolution of Ferroelectric/Ferromagnetic BiFeO3-CoFe2O4 Thin Films

    Science.gov (United States)

    Young, Sheng Yu; Salamanca-Riba, Lourdes G.; Zheng, Haimei

    2006-03-01

    We have investigated the mechanism of the self-assembly of BiFeO3-CoFe2O4 (BFO-CFO) ferroelectric/ferromagnetic thin film nanostructures using high-resolution transmission electron microscopy. We discuss the formation of the CFO columnar structure during the deposition process. The BFO-CFO thin films were deposited on SrTiO3 (001) single crystal substrates using pulsed laser deposition at a substrate temperature of 700 ^oC and deposition rate of around 5nm/min. In the early stages of growth, CFO domains form with dome like island shape and are covered by a BFO layer. After approximately 10 mins of continuous deposition, the nanocomposite rearranges and diffusion dominates to form a self-assembly of faceted CFO columns that extend to the surface of the film. These columns show pyramidal-like faceted shape and are embedded in the BFO matrix. A few atomic layers of BFO lie at the interface between the CFO columnar structures and the substrate. This layer helps relax the misfit strain between CFO and STO. The magnetic properties of the nanocomposite samples will also be presented.

  8. Ferroelectric devices

    CERN Document Server

    Uchino, Kenji

    2009-01-01

    Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments-and setbacks-in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding materials and device development.Filling the informational void, this collection of information reviews state-of-the-art research and development trends reflecting nano and optical technologies, environmental regulat

  9. A new method of dielectric characterization in the microwave range for high-k ferroelectric thin films

    OpenAIRE

    Nadaud, Kevin; Gundel, Hartmut,; Borderon, Caroline; Gillard, Raphaël; Fourn, Erwan

    2013-01-01

    International audience; In this paper we propose a new method of dielectric characterization of high-k thin films based on the measurement of coplanar capacitor inserts between two coplanar waveguide transmission lines. The measurement geometry is deposed on the thin film which is elaborate on an insulating substrate. The thin film permittivity is extracted with the help of a mathematical model describing the capacitance between two conductor plates deposed on a 2-layers substrate. A simple c...

  10. Electrical properties of two-dimensional thin films of the ferroelectric material Polyvinylidene Fluoride as a function of electric field

    Energy Technology Data Exchange (ETDEWEB)

    Belouadah, R., E-mail: r_belouadah74@yahoo.f [Departement de physique, Universite de M' sila, PB 116 Ichebilia, M' sila (Algeria); Laboratoire des Systemes Integres a base de Capteurs, Ecole Normale Superieure B.P 92 Kouba, Alger (Algeria); Kendil, D.; Bousbiat, E. [Laboratoire des Systemes Integres a base de Capteurs, Ecole Normale Superieure B.P 92 Kouba, Alger (Algeria); Guyomar, D.; Guiffard, B. [Laboratoire de Genie Electrique et Ferroelectricite, INSA-Lyon, Bat. Gustave Ferrie, 8 rue de la Physique, Villeurbanne (France)

    2009-06-01

    The study of the electrical properties of two-dimensional ferroelectric materials is very interesting because of the many possible applications relating to effects on their polarization properties. In this work we study the effect of a sinusoidal electric field on the dielectric and electrical properties of uni-axially and biaxially stretched polyvinylidene fluoride (PVDF) films. We have determined the polarization current, remanent polarization, maximal polarization, the hysteresis loop and coercive field as a function of applied electric field amplitude. The most interesting effects are the electric field (E) dependences of the resistivity. It is shown that for the biaxially stretched PVDF sample, the resistivity is almost constant, whereas for the uni-axially stretched specimen, a large decrease of resistivity is observed.

  11. Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    T. Young

    2018-02-01

    Full Text Available We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ∼50 nm thick grown on (001 LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T′ phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T′ phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T′-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

  12. Effects on Ferroelectric Thin-Film Stacks and Devices for Piezoelectric MEMS Applications at Varied Total Ionizing Dose (TID)

    Science.gov (United States)

    2017-03-01

    Atlanta, GA, USA, 30332 Abstract: Lead zirconate titanate (PZT) based thin films play a key role in a wide variety of applications due to its...thin films deposited on platinized silicon wafers, with IrO2 or Pt top electrodes. All samples were irradiated with 0.2, 0.5, 1, 2, 5, and 10

  13. Bi-layer graphene structure with non-equivalent planes: Magnetic properties study

    Science.gov (United States)

    Mhirech, A.; Aouini, S.; Alaoui-Ismaili, A.; Bahmad, L.

    2018-05-01

    In this paper, we study the magnetic properties of a ferromagnetic bi-layer graphene structure with non-equivalent planes. The geometry of the studied system is formed by two layers (A) and (B) consisting of the spins σ = 1 / 2 and S = 1 . For this purpose, the influence of the coupling exchange interactions, the external magnetic and the crystal fields are investigated and presented as well as the ground state phase diagrams. The Monte Carlo simulations have been used to examine the behavior of the partial and the total magnetizations as a function of the system parameters. These effects on the compensation and critical temperatures behavior are also presented in different phase diagrams, for the studied system.

  14. Ferroelectric SrBi sub 2 Ta sub 2 O sub 9 thin films deposited by plasma-enhanced MOCVD for nonvolatile memory device applications

    CERN Document Server

    Shin, W C; Choi, E S; Yoon, S G

    1999-01-01

    Ferroelectric bismuth-layer SrBi sub 2 Ta sub 2 O sub 9 (SBT) thin films were prepared on Pt/SiO sub 2 /Si substrates by using plasma-enhanced metalorganic chemical vapor deposition. The platinum bottom electrode deposited by using metalorganic chemical vapor deposition (MOCVD) showed a dense, smooth state after deposition of the SBT films and prevented bismuth diffusion into the platinum layer. The c-axis oriented SBT films were crystallized at a deposition temperature of 550 .deg. C. The remanent polarization (2Pr) and the coercive field (Ec) obtained for 180 nm-thick Sr sub 0 sub . sub 9 Bi sub 2 sub . sub 0 Ta sub 2 sub . sub 0 O sub 9 films deposited at 550 .deg. C were 15 mu C/cm sup 2 and 50 kV/cm, respectively, at an applied voltage of 5 V. The films showed fatigue-free characteristics up to 7.0 x 10 sup 9 bipolar switching pulses under 5 V. The leakage-current density of the SBT films was about 4 x 10 sup - sup 7 A/cm sup 2 at an applied electric field of 250 kV/cm. The leakage-current behavior of th...

  15. Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

    KAUST Repository

    Yao, Yingbang

    2014-02-01

    Multiferroic BiFeO3-(K0.5Na0.5) 0.4(Sr0.6Ba0.4)0.8Nb 2O6 (BFO-KNSBN) trilayer thin films, were epitaxially grown on MgO(0 0 1) and SrTiO3(0 0 1) by using pulsed laser deposition (PLD). Their ferroelectric, magnetic, dielectric and optical properties were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis magnetic loop was observed in the KNSBN-BFO-KNSBN trilayer films, where exchange bias and secondary phase in the BFO layer played crucial roles. Interactions between adjacent layers were revealed by temperature-dependent Raman spectroscopic measurements. © 2013 Elsevier B.V. All rights reserved.

  16. Structural properties of 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 relaxor ferroelectric thin films on SrRuO3 conducting oxides

    International Nuclear Information System (INIS)

    Lee, Ji Hye; Choi, Mi Ri; Jo, William; Jang, Ji Young; Kim, Mi Young

    2008-01-01

    Coating of 0.65Pb(Mg 1/3 Nb 2/3 )O 3 -0.35PbTiO 3 (PMN-PT) relaxor ferroelectrics by a sol-gel method is followed by growth of epitaxial SrRuO 3 (SRO) metallic oxide electrodes on SrTiO 3 (STO) single-crystal substrate by pulsed laser deposition. High-quality PMN-PT films on SRO with preferred growth orientation were successfully fabricated by controlling the operation parameters. Structural properties of relaxor ferroelectric PMN-PT thin films on SRO/STO substrates have been studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). In-plane and out-of-plane alignments of the heterostructure are confirmed and the structural twinning of the materials are also revealed

  17. Photoelectron spectroscopic and microspectroscopic probes of ferroelectrics

    Science.gov (United States)

    Tǎnase, Liviu C.; Abramiuc, Laura E.; Teodorescu, Cristian M.

    2017-12-01

    This contribution is a review of recent aspects connected with photoelectron spectroscopy of free ferroelectric surfaces, metals interfaced with these surfaces, graphene-like layers together with some exemplifications concerning molecular adsorption, dissociations and desorptions occurring from ferroelectrics. Standard photoelectron spectroscopy is used nowadays in correlation with other characterization techniques, such as piezoresponse force microscopy, high resolution transmission electron spectroscopy, and ferroelectric hysteresis cycles. In this work we will concentrate mainly on photoelectron spectroscopy and spectro-microscopy characterization of ferroelectric thin films, starting from atomically clean ferroelectric surfaces of lead zirco-titanate, then going towards heterostructures using this material in combination with graphene-like carbon layers or with metals. Concepts involving charge accumulation and depolarization near surface will be revisited by taking into account the newest findings in this area.

  18. Strain gradients in epitaxial ferroelectrics

    International Nuclear Information System (INIS)

    Catalan, G.; Noheda, B.; McAneney, J.; Sinnamon, L.J.; Gregg, J.M.

    2005-01-01

    X-ray analysis of ferroelectric thin layers of Ba 1/2 Sr 1/2 TiO 3 with different thicknesses reveals the presence of strain gradients across the films and allows us to propose a functional form for the internal strain profile. We use this to calculate the influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of films with decreasing thickness, in excellent agreement with the observed behavior. This paper shows that strain relaxation can lead to smooth, continuous gradients across hundreds of nanometers, and it highlights the pressing need to avoid such strain gradients in order to obtain ferroelectric films with bulklike properties

  19. Polarisation Dynamics in Ferroelectric Materials

    Science.gov (United States)

    Buchacher, Till

    Ferroelectric materials have established themselves as indispensable in key applications such as piezoelectric transducers and energy storage devices. While the use of ferroelectrics in these fields dates back more than 50 years, little progress has been made to extend applications of ferroelectrics into new fields. To a large extend the observed slow progress is not caused by a lack of potential applications, but to by the inherent complexity associated with a structural phase transition, combined with strong coupling of polarisation, strain and temperature, and the strong modification of the phenomena by material defects. This thesis takes a look at prospective applications in energy storage for pulse power applications, solid state cooling and non-volatile random access memory and identifies key issues that need to be resolved. The thesis delivers time-domain based approaches to determine ferroelectric switching behaviour of bulk materials and thin films down to sub-ns time scales. The approach permitted study of how information written to a ferroelectric memory decays as a result of multiple non-destructive read operations. Furthermore simultaneous direct measurements of temperature and ferroelectric switching established a direct link between the retarded switching phenomenon observed in ferroelectrics and temperature changes brought by the electrocaloric effect. By comparison with analytical models and numerical simulation a large localised temperature change on the scale of individual domains is postulated. It implies a much larger coupling between switching and local temperature than has been previously considered. In extension of the model the frequency dependence of polarisation fatigue under bipolar conditions is explained by the occurrence of large temperature gradients in the material.

  20. Interface strain coupling and its impact on the transport and magnetic properties of LaMnO3 thin films grown on ferroelectrically active substrates

    International Nuclear Information System (INIS)

    Zheng, R.K.; Wang, Y.; Habermeier, H.-U.; Chan, H.L.W.; Li, X.M.; Luo, H.S.

    2012-01-01

    Highlights: ► Strong interface strain coupling in LaMnO 3 /PMN-PT heterostructure. ► In situ dynamic turning of the strain and lattice distortion of LaMnO 3 films. ► Coupling of electrons to lattice strain is crucial to understand the strain effect. - Abstract: Thin films of LaMnO 3 have been epitaxially grown on 〈0 0 1〉 oriented ferroelectric 0.67Pb(Mg 1/3 Nb 2/3 )O 3 -0.33PbTiO 3 (PMN-PT) single-crystal substrates. The poling of the PMN-PT crystal causes a decrease in the resistance and an increase in the magnetization and magnetoresistance of the LaMnO 3 film. In situ X-ray diffraction measurements revealed that these changes arise from the poling-induced strain in the PMN-PT substrate, which reduces the in-plane tensile strain and the Jahn–Teller (JT) distortion of MnO 6 octahedra of the LaMnO 3 film. Moreover, it was found that the transport properties of LaMnO 3 films are much more sensitive to the poling-induced strain than that of CaMnO 3 films for which there is no JT distortion, implying that the electron–lattice coupling is one of the most important ingredients in understanding the strain effect in LaMnO 3 films.

  1. Theory of low-power ultra-broadband terahertz sideband generation in bi-layer graphene

    Science.gov (United States)

    Crosse, J. A.; Xu, Xiaodong; Sherwin, Mark S.; Liu, R. B.

    2014-01-01

    In a semiconductor illuminated by a strong terahertz (THz) field, optically excited electron–hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the THz frequency. Such high-order THz sideband generation is of interest both as an example of extreme nonlinear optics and also as a method for ultrafast electro-optical modulation. So far, this phenomenon has only been observed with large field strengths (~10 kV cm−1), an obstacle for technological applications. Here we predict that bi-layer graphene generates high-order sidebands at much weaker THz fields. We find that a THz field of strength 1 kV cm−1 can produce a high-sideband spectrum of about 30 THz, 100 times broader than in GaAs. The sidebands are generated despite the absence of classical collisions, with the quantum coherence of the electron–hole pairs enabling recombination. These remarkable features lower the barrier to desktop electro-optical modulation at THz frequencies, facilitating ultrafast optical communications. PMID:25249245

  2. Study on calcination of bi-layered films produced by anodizing iron in dimethyl sulfoxide electrolyte

    International Nuclear Information System (INIS)

    Jagminas, Arūnas; Klimas, Vaclovas; Mažeika, Kęstutis; Mickevičius, Sigitas; Balakauskas, Saulius

    2012-01-01

    Research on well adherent, thick and nanoporous oxide film formation onto the metal substrates underwent a major burst throughout the last decade. In the current study, thick bi-layered films produced onto a pure iron surface by anodizing way in dimethyl sulfoxide (DMSO) electrolyte containing silica hexafluoride acid have been investigated upon the annealing in air. Compositional, phase and structural transformations of the film material to hematite, α-Fe 2 O 3 , were studied using Mössbauer spectroscopy at room to cryogenic temperatures, thermogravimetry (TG), differential thermal analysis (DTA), photoemission spectroscopy, scanning electron microscopy (SEM), and wave dispersive X-ray spectroscopy (WDX). Experimental findings indicated that much longer heating in air is required for these films to be fully transformed to hematite. This effect is linked here with the complex nature of DMSO films. Based on the combined WDX, photoemission and Mössbauer spectroscopy results, the transformations taken place during calcination of such amorphous films by heat-treatment in air to crystalline hematite have been determined. Investigations on the calcination effects of thick iron anodic films reported here offer opportunities for both fundamental research and practical applications.

  3. A study on DPL model of heat transfer in bi-layer tissues during MFH treatment.

    Science.gov (United States)

    Kumar, Dinesh; Kumar, P; Rai, K N

    2016-08-01

    In this paper, dual-phase-lag bioheat transfer model subjected to Fourier and non-Fourier boundary conditions for bi-layer tissues has been solved using finite element Legendre wavelet Galerkin method (FELWGM) during magnetic fluid hyperthermia. FELWGM localizes small scale variation of solution and fast switching of functional bases. It has been observed that moderate hyperthermia temperature range (41-46°C) can be better achieved in spherical symmetric coordinate system and treatment method will be independent of the Fourier and non-Fourier boundary conditions used. The effect of phase-lag times has been observed only in tumor region. FCC FePt magnetic nano-particle produces more effective treatment with respect to other magnetic nano-particles. The effect of variability of magnetic heat source parameters (magnetic induction, frequency, diameter of magnetic nano-particles, volume fractional of magnetic nano-particles and ligand layer thickness) has been investigated. The physical property of these parameters has been described in detail during magnetic fluid hyperthermia (MFH) treatment and also discussed the clinical application of MFH in Oncology. Copyright © 2016 Elsevier Ltd. All rights reserved.

  4. Attractive mechanical properties of a lightweight highly sensitive bi layer thermistor: polycarbonate/organic molecular conductor

    International Nuclear Information System (INIS)

    Laukhina, E; Lebedev, V; Rovira, C; Laukhin, V; Veciana, J

    2016-01-01

    The paper covers some of the basic mechanical characteristics of a recently developed bi layer thermistor: polycarbonate/(001) oriented layer of organic molecular conductor α’-(BEDT-TTF) 2 I x Br 3-x , were BEDT-TTF=bis(ethylenedithio)tetrathiafulvalen. The nano and macro mechanical properties have been studied in order to use this flexible, low cost thermistor in sensing applications by proper way. The nano-mechanical properties of the temperature sensitive semiconducting layer of α’-(BEDT-TTF) 2 I x Br 3-x were tested using nanoindentation method. The value of Young's modulus in direction being perpendicular to the layer plan was found as 9.0 ±1.4 GPa. The macro mechanical properties of the thermistor were studied using a 5848 MicroTester. The tensile tests showed that basic mechanical characteristics of the thermistor are close to those of polycarbonate films. This indicates a good mechanical strength of the developed sensor. Therefore, the thermistor can be used in technologies that need to be instrumented with highly robustness lightweight low cost temperature sensors. The paper also reports synthetic details on fabricating temperature sensing e-textile. As the temperature control is becoming more and more important in biomedical technologies like healthcare monitoring, this work strongly contributes on the ongoing research on engineering sensitive conducting materials for biomedical applications. (paper)

  5. Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

    KAUST Repository

    Altynnikov, A. G.

    2014-01-27

    The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).

  6. Thickness Dependence of Switching Behavior in Ferroelectric BiFeO3 Thin Films: A Phase-Field Simulation

    Directory of Open Access Journals (Sweden)

    Guoping Cao

    2017-11-01

    Full Text Available A phase-field approach to the analysis of the thickness effects in electric-field-induced domain switching in BiFeO3 thin films has been formulated. Time evolutions of domain switching percentage for films with different thicknesses were explored to reveal the primary switching path and its dependence on film thickness. In addition, hysteresis loop for these films were calculated to obtain their coercive fields. Results show a nonlinear thickness dependence of coercive field for ultrathin films. A parametric study of the interactions between film thickness, coercive field, current-voltage (I-V response, and polarization switching behavior is herein discussed, which could provide physical insights into materials engineering.

  7. Electrolyte bi-layering strategy to improve the performance of an intermediate temperature solid oxide fuel cell: A review

    Science.gov (United States)

    Shri Prakash, B.; Pavitra, R.; Senthil Kumar, S.; Aruna, S. T.

    2018-03-01

    Lowering of operation temperature has become one of the primary goals of solid oxide fuel (SOFC) research as reduced temperature improves the prospects for widespread commercialization of this energy system. Reduced operational temperature also mitigates the issues associated with high temperature SOFCs and paves way not only for the large scale stationary power generation but also makes SOFCs viable for portable and transport applications. However, there are issues with electrolyte and cathode materials at low temperatures, individually as well as in association with other components, which makes the performance of the SOFCs less satisfactory than expected at lowered temperatures. Bi-layering of electrolytes and impregnation of cathodes have emerged as two important strategies to overcome these issues and achieve higher performance at low temperatures. This review article provides the perspective on the strategy of bi-layering of electrolyte to achieve the desired high performance from SOFC at low to intermediate temperatures.

  8. Energy Storage Characteristics of BiFeO3/BaTiO3 Bi-Layers Integrated on Si

    Directory of Open Access Journals (Sweden)

    Menglin Liu

    2016-11-01

    Full Text Available BiFeO3/BaTiO3 bi-layer thick films (~1 μm were deposited on Pt/Ti/SiO2/(100 Si substrates with LaNiO3 buffer layers at 500 °C via a rf magnetron sputtering process. X-ray diffraction (XRD analysis revealed that both BiFeO3 and BaTiO3 layers have a (00l preferred orientation. The films showed a small remnant polarization (Pr ~ 7.8 μC/cm2 and a large saturated polarization (Ps ~ 65 μC/cm2, resulting in a slim polarization-electric field (P-E hysteresis loop with improved energy storage characteristics (Wc = 71 J/cm3, η = 61%. The successful “slim-down” of the P-E loop from that of the pure BiFeO3 film can be attributed to the competing effects of space charges and the interlayer charge coupling on charge transport of the bi-layer film. The accompanying electrical properties of the bi-layer films were measured and the results confirmed their good quality.

  9. Evaluation of Double Process Lithography (DPL) with bi-layer photo-resist process for contact layer-patterning

    Science.gov (United States)

    Chen, Gong; Wu, Kevin

    2008-10-01

    Double Process Lithography (DPL) has been widely accepted as a viable printing technique for critical layers at 45nm nodes and below. In addition, DPL technique also allows us to use available process tool-sets with less capability to develop the next node CMOS devices in early research and development stages with additional photo-masks. One practical issue of applying DPL technique is the process crosstalk, which is the impact of the existing etched patterns after the 1st process to the overall lithography performance during the 2nd printing process. In this paper, we evaluated the DPL process for contact holetype patterning with a 193nm silicon-containing bi-layer photo-resist. We explained the bi-layer photoresist process flow and its low process cross-talk characteristics when applied in our DPL process. We also discussed the challenges of printing small contacts in the DPL process. The preliminary experiment results indicated that silicon-containing photo-resist process is a good candidate for DPL process in the contact hole-type of patterns, and it has good characteristics of low process cross-talk. The flexibility of the drydevelop process in bi-layer resist also offered us another way to form small contacts in the substrate film. At the end, we provided some suggestions in contact pattern decomposition algorithm and related exposure-tool alignment strategies for future implementation of DPL technology.

  10. Effect of potassium content on electrostrictive properties of Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}-based relaxor ferroelectric thin films with morphotropic phase boundary

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, X.J., E-mail: zhengxuejun@usst.edu.cn [School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China); Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, Hunan 411105 (China); Liu, J.Y.; Peng, J.F.; Liu, X.; Gong, Y.Q. [Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, Hunan 411105 (China); Zhou, K.S.; Huang, D.H. [School of Physics Science and Technology, Central South University, Changsha, Hunan 410083 (China)

    2013-12-02

    (1 − x)Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}–xK{sub 0.5}Bi{sub 0.5}TiO{sub 3} (NBT–KBT100x) (x = 0.13, 0.15, 0.18, 0.20, 0.25) thin films were prepared by metal–organic decomposition, and the crystalline structures, surface morphologies, leakage current densities and dielectric, piezoelectric, and ferroelectric properties were investigated by X-ray diffractometer, scanning electron microscopy, semiconductor characterization system, scanning probe microscopy, and ferroelectric tester, respectively. The electrostrictive equation in phenomenological theory is used to model the piezoelectric and electrostriction behaviors of relaxor ferroelectric thin films, and the electrostriction coefficient couples effective piezoelectric coefficient with the polarization and relative permittivity. The electrostriction strains are larger than the piezoelectric strains for NBT–KBT100x thin films, and the electrostriction coefficients and electrostrictive strains are at the ranges of 0.019–0.025 m{sup 4}/C{sup 2} and 0.12%–0.26%, respectively. NBT–KBT15 thin film is of the largest electrostriction coefficient and electrostrictive strain, and it is attributed to the appropriate potassium content near morphotropic phase boundary and the equivalent energy for the phase coexistence. The results indicate that NBT-based thin film with high electrostrictive properties is a promising candidate for the application in electromechanical devices. - Highlights: • Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}–xK{sub 0.5}Bi{sub 0.5}TiO{sub 3} films were prepared by metal–organic decomposition. • The electrostrictive properties were measured based on the electrostrictive equation. • Largest electrostriction coefficient and strain were 0.025 m{sup 4}/C{sup 2} and 0.26%. • Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}–xK{sub 0.5}Bi{sub 0.5}TiO{sub 3} thin films are promising for transducer applications.

  11. Substrate-dependent ferroelectric and dielectric properties of Mn doped Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} thin films derived by chemical solution decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Feng, C. [School of Materials Science and Engineering, University of Jinan, Jinan, 250022 (China); Yang, C.H., E-mail: fengchao901008@163.com [School of Materials Science and Engineering, University of Jinan, Jinan, 250022 (China); Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan, 250022 (China); Zhou, Y.Y.; Geng, F.J.; Lv, P.P.; Yao, Q. [School of Materials Science and Engineering, University of Jinan, Jinan, 250022 (China)

    2016-09-15

    Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Mn{sub 0.02})O{sub 3} (NBTMn) thin films have been fabricated on Pt/TiO{sub 2}/SiO{sub 2}/Si and LaNiO{sub 3} (LNO)/Si substrates via chemical solution decomposition. The microstructure, ferroelectric and dielectric properties were investigated. Both films on different substrates can be crystallized into the phase-pure perovskite structures. The NBTMn thin film deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate shows random orientation with (l00) and (110) diffraction peaks, while the sample on LNO/Si exhibits preferred orientation with strong diffraction peaks of (l00). The NBTMn thin film deposited on LNO/Si substrate exhibits a denser and smoother microstructure. Compared with the round shaped polarization-electric field hysteresis loops of NBTMn on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate, the enhanced ferroelectric property can be observed in NBTMn thin film fabricated on LNO/Si with a remanent polarization (P{sub r}) of 10.2 μC/cm{sup 2} due to the reduced leakage current. The dielectric tunabilities of two films increase gradually with the increasing of applied voltage, and the sample on LNO/Si substrate has a relatively larger dielectric tunability with 20% at 14 V and 1 MHz. - Graphical abstract: Na{sub 0.5}Bi{sub 0.5}(Ti{sub 0.98}Mn{sub 0.02})O{sub 3} (NBTMn) thin films have been fabricated on Pt/Si and LaNiO{sub 3} (LNO)/Si substrates. Compared with the NBTMn thin film deposited on Pt/Si substrate which shows poor P-E loops with a round shaped feature because of the high leakage current, the NBTMn thin film on LNO/Si substrate exhibits much improved P-E loops with a slim shaped feature and a remanent polarization of 10.2 μC/cm{sup 2}. - Highlights: • The phase-pure perovskite can be obtained with both adopted substrates. • Obviously reduced leakage current can be obtained in thin film on LNO/Si substrate. • A well-defined P-E loop is achieved in NBTMn thin film on LNO/Si substrate. • The dielectric properties of

  12. Secretion of wound healing mediators by single and bi-layer skin substitutes.

    Science.gov (United States)

    Maarof, Manira; Law, Jia Xian; Chowdhury, Shiplu Roy; Khairoji, Khairul Anuar; Saim, Aminuddin Bin; Idrus, Ruszymah Bt Hj

    2016-10-01

    Limitations of current treatments for skin loss caused by major injuries leads to the use of skin substitutes. It is assumed that secretion of wound healing mediators by these skin substitutes plays a role in treating skin loss. In our previous study, single layer keratinocytes (SK), single layer fibroblast (SF) and bilayer (BL; containing keratinocytes and fibroblasts layers) skin substitutes were fabricated using fibrin that had shown potential to heal wounds in preclinical studies. This study aimed to quantify the secretion of wound healing mediators, and compare between single and bi-layer skin substitutes. Skin samples were digested to harvest fibroblasts and keratinocytes, and expanded to obtain sufficient cells for the construction of skin substitutes. Acellular fibrin (AF) construct was used as control. Substitutes i.e. AF, SK, SF and BL were cultured for 2 days, and culture supernatant was collected to analyze secretion of wound healing mediators via multiplex ELISA. Among 19 wound healing mediators tested, BL substitute secreted significantly higher amounts of CXCL1 and GCSF compared to SF and AF substitute but this was not significant with respect to SK substitute. The BL substitute also secreted significantly higher amounts of CXCL5 and IL-6 compared to other substitutes. In contrast, the SK substitute secreted significantly higher amounts of VCAM-1 compared to other substitutes. However, all three skin substitutes also secreted CCL2, CCL5, CCL11, GM-CSF, IL8, IL-1α, TNF-α, ICAM-1, FGF-β, TGF-β, HGF, VEGF-α and PDGF-BB factors, but no significant difference was seen. Secretion of these mediators after transplantation may play a significant role in promoting wound healing process for the treatment of skin loss.

  13. Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.

    Science.gov (United States)

    Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao

    2015-06-24

    A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.

  14. Ferroelectric tunnel junctions for information storage and processing.

    Science.gov (United States)

    Garcia, Vincent; Bibes, Manuel

    2014-07-24

    Computer memory that is non-volatile and therefore able to retain its information even when switched off enables computers that do not need to be booted up. One of the technologies for such applications is ferroelectric random access memories, where information is stored as ferroelectric polarization. To miniaturize such devices to the size of a few nanometres, ferroelectric tunnel junctions have seen considerable interest. There, the electric polarization determines the electrical resistance of these thin films, switching the current on and off. With control over other parameters such as magnetism also being possible, ferroelectric tunnel junctions represent a promising and flexible device design.

  15. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  16. Comment on "Interesting Evidence for Template-Induced Ferroelectric Behavior in Ultra-Thin Titanium Dioxide Films Grown on (110) Neodymium Gallium Oxide Substrates"

    Czech Academy of Sciences Publication Activity Database

    Skiadopoulou, Styliani; Kamba, Stanislav; Drahokoupil, Jan; Kroupa, Jan; Deepak, N.; Pemble, M.E.; Whatmore, R.W.

    2016-01-01

    Roč. 26, č. 5 (2016), s. 642-646 ISSN 1616-301X R&D Projects: GA ČR GA15-08389S EU Projects: European Commission(XE) 607521 - NOTEDEV Institutional support: RVO:68378271 Keywords : ferroelectrics * soft modes * phase transitions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 12.124, year: 2016

  17. Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers

    International Nuclear Information System (INIS)

    Rodrigo, J.F.; Sales, D.L.; Shafi, M.; Henini, M.; Turyanska, L.; Novikov, S.; Molina, S.I.

    2010-01-01

    The influence of post-growth annealing on the microstructure and photoluminescence (PL) of GaAsBi alloys grown on (3 1 1)B GaAs is analyzed. Conventional transmission electron microscopy (TEM) performed on as-grown samples evidence the presence of structural defects and a mosaic structure in the GaAsBi layer. A sequence of stacking faults at regions close to the GaAs/GaAsBi interface are observed in high resolution TEM images. After annealing at 473 K during 3 h the mosaic structure disappears, the presence of defects is reduced and the PL peak intensely enhances.

  18. Ferroelectric properties of NaNbO3-BaTiO3 thin films deposited on SrRuO3/(001)SrTiO3 substrate by pulsed laser deposition

    International Nuclear Information System (INIS)

    Yamazoe, Seiji; Oda, Shinya; Sakurai, Hiroyuki; Wada, Takahiro; Adachi, Hideaki

    2009-01-01

    (NaNbO 3 ) 1-x (BaTiO 3 ) x (NN-xBT) thin films with low BaTiO 3 (BT) concentrations x (x=0.05 and 0.10) were fabricated on SrRuO 3 /(001)SrTiO 3 (SRO)/(001)STO) substrate by pulsed laser deposition (PLD). X-ray diffraction pattern (XRD) and transmission electron diffraction pattern (TED) showed that NN-0.10BT thin film was epitaxially grown on SRO/(001)STO substrate with a crystallographic relationship of [001] NN-xBT parallel [001] STO . From reciprocal space maps, the lattice parameters of the out-of-plane direction of NN-xBT thin films became larger with an increase in BT concentration, although the lattice parameter of the in-plane was hardly changed by the BT concentration. The value of relative dielectric constant ε r of the NN-xBT thin films were increased with BT concentration. The ε r and the dielectric loss tanδ of NN-0.10BT were 1220 and 0.02 at 1 kHz, respectively. The P-E hysteresis loops of the NN-xBT thin films showed clear ferroelectricity. Although the value of remanent polarization P r decreased with the BT concentration, the behaviors of ε r , P r , and coercive electric field E c of the NN-xBT thin films against the BT concentration accorded with those of NN-xBT ceramics, in which NN-0.10BT ceramics exhibited the largest piezoelectric property. Therefore, the NN-0.10BT thin film is expected to show high piezoelectricity. (author)

  19. Effects of Bi doping on dielectric and ferroelectric properties of ...

    Indian Academy of Sciences (India)

    Abstract. [Pb0·95(La1−yBiy)0·05][Zr0·53Ti0·47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low tem- perature of 550 ◦C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric ...

  20. Effects of Bi doping on dielectric and ferroelectric properties

    Indian Academy of Sciences (India)

    [Pb0.95(La1−Bi)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of ...

  1. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  2. Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

    Science.gov (United States)

    Abadli, S.; Mansour, F.; Perrera, E. Bedel

    We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

  3. Evaluation of a non-woven fabric coated with a chitosan bi-layer composite for wound dressing.

    Science.gov (United States)

    Liu, Bai-Shuan; Yao, Chun-Hsu; Fang, Shr-Shin

    2008-05-13

    This study presents a novel design of an easily stripped bi-layer composite that consists of an upper layer of a soybean protein non-woven fabric coated with a lower layer, a genipin-crosslinked chitosan film, as a wound dressing material. This study examines the in vitro properties of the genipin-crosslinked chitosan film and the bi-layer composite. Furthermore, in vivo experiments are conducted to study wounds treated with the composite in a rat model. Experimental results show that the degree of crosslinking and the in vitro degradation rate of the genipin-crosslinked chitosan films can be controlled by varying the genipin contents. In addition, the genipin contents should exceed 0.025 wt.-% of the chitosan-based material if complete crosslinking reactions between genipin and chitosan molecules are required. Water contact angle analysis shows that the genipin-crosslinked chitosan film is not highly hydrophilic; therefore, the genipin-crosslinked chitosan layer is not entangled with the soybean protein non-woven fabric, which forms an easily stripped interface layer between them. Furthermore, this new wound dressing material provides adequate moisture, thereby minimizing the risk of wound dehydration, and exhibits good mechanical properties. The in vivo histological assessment results reveal that epithelialization and reconstruction of the wound are achieved by covering the wound with the composite, and the composite is easily stripped from the wound surface without damaging newly regenerated tissue.

  4. Collagen-PVA aligned nanofiber on collagen sponge as bi-layered scaffold for surface cartilage repair.

    Science.gov (United States)

    Lin, Hsin-Yi; Tsai, Wen-Chi; Chang, Shih-Hsing

    2017-05-01

    Researchers have made bi-layered scaffolds but mostly for osteochondral repairs. The anatomic structure of human cartilage has different zones and that each has varying matrix morphology and mechanical properties is often overlooked. Two bi-layered collagen-based composites were made to replicate the superficial and transitional zones of an articular cartilage. Aligned and random collagen-PVA nanofibers were electrospun onto a freeze-dried collagen sponge to make the aligned and random composites, respectively. The morphology, swelling ratio, degradation and tensile properties of the two composites were examined. Primary porcine chondrocytes were cultured on the composites for three weeks and their proliferation and secretion of glycosaminoglycan (GAG) and type II collagen were measured. The influences of the cell culture on the tensile properties of the composites were studied. The nanofiber layer remained adhered to the sponge after three weeks of cell culture. Both composites lost 30-35% of their total weight in a saline buffer after three weeks. The tensile strength and Young's modulus of both composites increased after three weeks of chondrocyte culture (p collagen. They were seen embedded in lacunae after three weeks. The aligned composite may be more suitable for articular cartilage repair because of the higher tensile strength from the aligned nanofibers on the surface that can better resist wear.

  5. Effect of substrate temperature in the structural, optical and ferroelectric properties of thin films of BaTiO{sub 3} deposited by RF sputtering; Efecto de la temperatura de substrato en las propiedades estructurales, opticas y ferroelectricas de peliculas delgadas de BaTiO{sub 3} depositadas por RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Marquez H, A. [Universidad Autonoma de San Luis Potosi, Coordinacion Academica Region Altiplano, Carretera a Cedral Km. 5 -600, Matehuala, 78800 San Luis Potosi (Mexico); Hernandez R, E.; Zapata T, M. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria, Calz. Legaria 694, Col. Irrigacion, 11500 Mexico D. F. (Mexico); Calzadilla A, O. [Universidad de la Habana, Facultad de Fisica-IMRE, San Lazaro y L. Municipio Plaza de la Revolucion, La Habana (Cuba); Melendez L, M. [IPN, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2012-07-01

    Thin films of Barium Titanate (BaTiO{sub 3}) were grown on nichrome and quartz substrates, using a BaTiO{sub 3} target, by RF sputtering technique. We varied the substrate temperature in order to study its effect on the structural, optical and ferroelectric properties of the samples. The results of the X-ray diffraction showed tetragonal structure with increases of the crystallinity as increases the substrate temperature. Furthermore, it observed by ultraviolet-visible spectroscopy that the band gap decreased as the substrate temperature increases showing abrupt sharp decrease at 494.8{sup o} C. The ferroelectric properties of the films showed a dependence with substrate temperature, the best ferroelectric answer was obtained at 494.8{sup o} C. (Author)

  6. Microstructure and nanoscale piezoelectric/ferroelectric properties in La{sub 2}Ti{sub 2}O{sub 7} thin films grown on (110)-oriented doped Nb:SrTiO{sub 3} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Zhenmian [Universite Lille Nord de France, F-59000 Lille (France); CNRS, UMR 8181, F-59650 Villeneuve d' Ascq (France); Universite d' Artois, UCCS, F-62300 Lens (France); USTL, ENSCL, UCCS, F-59652 Villeneuve d' Ascq (France); Saitzek, Sebastien; Ferri, Anthony; Bruyer, Emilie; Sayede, Adlane; Desfeux, Rachel [Universite Lille Nord de France, F-59000 Lille (France); CNRS, UMR 8181, F-59650 Villeneuve d' Ascq (France); Universite d' Artois, UCCS, F-62300 Lens (France); Roussel, Pascal [Unite de Catalyse et de Chimie du Solide, UCCS CNRS UMR 8181, F-59652 Villeneuve d' Ascq (France); Universite Lille Nord de France, F-59000 Lille (France); CNRS, UMR 8181, F-59650 Villeneuve d' Ascq (France); USTL, ENSCL, UCCS, F-59652 Villeneuve d' Ascq (France); Rguiti, Mohamed [Universite Lille Nord de France, F-59000 Lille (France); Universite de Valenciennes et du Hainaut-Cambresis, LMCPA, EA 2443, F-59600 Maubeuge (France); Mentre, Olivier [Universite Lille Nord de France, F-59000 Lille (France); CNRS, UMR 8181, F-59650 Villeneuve d' Ascq (France); USTL, ENSCL, UCCS, F-59652 Villeneuve d' Ascq (France)

    2011-10-15

    (00l)-Oriented La{sub 2}Ti{sub 2}O{sub 7} (LTO) thin films with monoclinic perovskite-layer structure [a = 7.806(2)A, b = 5.552(3)A, c = 13.015(5)A, {beta} = 98.62(2) ] have been grown by a sol-gel route on conducting (110)-oriented doped Nb:SrTiO{sub 3} (STO) substrates. The narrow rocking curves (0.24 width for 004{sub LTO} peak) demonstrate the sharp mosaicity of the films. Using high-resolution X-ray diffraction (HR-XRD), epitaxial relationships between the LTO, and the STO substrate are given. In addition, HR-XRD evidences the existence of (212)-oriented crystallites 1.5 disoriented with respect to the plane of the substrate. We confirm, by DFT calculations, that the polarization vector lies in the b-axis of the LTO cell and consequently, the existence of these (212)-oriented crystallites enables to explain the origin of the various contrasts observed both on the in-plane and out-of-plane images when collected by piezoresponse force microscopy. Finally, both successful poling experiments performed via the tip of atomic force microscope and the existence of local piezoloops within the domains, unambiguously confirm the ferroelectric state of the films at the nanoscale level. Once again, this study demonstrates that a clear understanding of nanoscale piezoelectric/ferroelectric phenomena in oriented thin films passes through a carefully structural analysis as performed by HR-XRD. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Transport Asymmetry of Novel Bi-Layer Hybrid Perfluorinated Membranes on the Base of MF-4SC Modified by Halloysite Nanotubes with Platinum

    Directory of Open Access Journals (Sweden)

    Anatoly Filippov

    2018-03-01

    Full Text Available Three types of bi-layer hybrid nanocomposites on the base of perfluorinated cation-exchange membrane MF-4SC (Russian analogue of Nafion®-117 were synthesized and characterized. It was found that two membranes possess the noticeable asymmetry of the current–voltage curve (CVC under changing their orientation towards the applied electric field, despite the absence of asymmetry of diffusion permeability. These phenomena were explained in the frame of the “fine-porous model” expanded for bi-layer membranes. A special procedure to calculate the real values of the diffusion layers thickness and the limiting current density was proposed. Due to asymmetry effects of the current voltage curves of bi-layer hybrid membranes on the base of MF-4SC, halloysite nanotubes and platinum nanoparticles, it is prospective to assemble membrane switches (membrane relays or diodes with predictable transport properties, founded upon the theory developed here.

  8. Transitions between paraelectric and ferroelectric phases of bent-core smectic liquid crystals in the bulk and in thin freely suspended films

    Science.gov (United States)

    Eremin, Alexey; Floegel, Martin; Kornek, Ulrike; Stern, Stephan; Stannarius, Ralf; Nádasi, Hajnalka; Weissflog, Wolfgang; Zhu, Chenhui; Shen, Yongqiang; Park, Cheol Soo; Maclennan, Joseph; Clark, Noel

    2012-11-01

    We report on the contrasting phase behavior of a bent-core liquid crystal with a large opening angle between the mesogenic units in the bulk and in freely suspended films. Second-harmonic generation experiments and direct observation of director inversion walls in films in an applied electric field reveal that the nonpolar smectic C phase observed in bulk samples becomes a ferroelectric “banana” phase in films, showing that a mesogen with a small steric moment can give a phase with polar order in freely suspended films even when the corresponding bulk phase is paraelectric.

  9. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Directory of Open Access Journals (Sweden)

    Murali Gedda

    2013-11-01

    Full Text Available Polyvinyl alcohol (PVA and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc wire base field-effect transistors (OFETs. CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  10. High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Gedda, Murali; Obaidulla, Sk. Md. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India); Subbarao, Nimmakayala V. V. [Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India); Goswami, Dipak K. [Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India); Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India)

    2013-11-15

    Polyvinyl alcohol (PVA) and anodized Al{sub 2}O{sub 3} layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO{sub 2} surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μ{sub EF}) value of 1.11 cm{sup 2}/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.

  11. Pulse width and height modulation for multi-level resistance in bi-layer TaOx based RRAM

    Science.gov (United States)

    Alamgir, Zahiruddin; Beckmann, Karsten; Holt, Joshua; Cady, Nathaniel C.

    2017-08-01

    Mutli-level switching in resistive memory devices enables a wide range of computational paradigms, including neuromorphic and cognitive computing. To this end, we have developed a bi-layer tantalum oxide based resistive random access memory device using Hf as the oxygen exchange layer. Multiple, discrete resistance levels were achieved by modulating the RESET pulse width and height, ranging from 2 kΩ to several MΩ. For a fixed pulse height, OFF state resistance was found to increase gradually with the increase in the pulse width, whereas for a fixed pulse width, the increase in the pulse height resulted in drastic changes in resistance. Resistive switching in these devices transitioned from Schottky emission in the OFF state to tunneling based conduction in the ON state, based on I-V curve fitting and temperature dependent current measurements. These devices also demonstrated endurance of more than 108 cycles with a satisfactory Roff/Ron ratio and retention greater than 104 s.

  12. Flexoelectricity: strain gradient effects in ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Ma Wenhui [Department of Physics, Shantou Unversity, Shantou, Guangdong 515063 (China)

    2007-12-15

    Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 {mu} C m{sup -1} for lead zirconate titanate to 100 {mu} C m{sup -1} for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems.

  13. Flexoelectricity: strain gradient effects in ferroelectrics

    International Nuclear Information System (INIS)

    Ma Wenhui

    2007-01-01

    Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 μ C m -1 for lead zirconate titanate to 100 μ C m -1 for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems

  14. Illumination effects on the ferroelectric and photovoltaic properties of Pb0.95La0.05Zr0.54Ti0.46O3 thin film based asymmetric MFM structure

    Science.gov (United States)

    Batra, V.; Kotru, S.

    2017-12-01

    We report the effects of illumination on the ferroelectric and photovoltaic properties of the Pb0.95La0.05Zr0.54Ti0.46O3 (PLZT) thin film based asymmetric metal/ferroelectric/metal capacitor structure, using Au as a top electrode and Pt as a bottom electrode. Conductive-AFM (atomic force microscopy) measurements demonstrate the evolution of charge carriers in PLZT films on illumination. The capacitance-voltage, the polarization-electric field, and the leakage current-voltage characteristics of the asymmetric Au/PLZT/Pt capacitor are discussed under dark and illuminated conditions. The light generates charge carriers in the film, which increase the coercive field and net remnant polarization and decrease the capacitance. The leakage current of the capacitor increases by an order of magnitude upon illumination. The leakage current data analyzed to study the conduction mechanism shows that the capacitor structure follows the Schottky emission "1/4" law. The illuminated current density-voltage curve of the capacitor shows non-zero photovoltaic parameters. An open circuit voltage (Voc) of -0.19 V and a short circuit current density (Jsc) of 1.48 μA/cm2 were obtained in an unpoled film. However, after positive poling, the illuminated curve shifts towards a higher voltage value resulting in a Voc of -0.93 V. After negative poling, the curve shows no change in the Voc value. For both poling directions, the Jsc values decrease. The photocurrent in the capacitor shows a linear variation with the incident illumination intensity.

  15. Ferroelectricity in wurtzite structure simple chalcogenide

    Science.gov (United States)

    Moriwake, Hiroki; Konishi, Ayako; Ogawa, Takafumi; Fujimura, Koji; Fisher, Craig A. J.; Kuwabara, Akihide; Shimizu, Takao; Yasui, Shintaro; Itoh, Mitsuru

    2014-06-01

    The possibility of the new class ferroelectric materials of wurtzite structure simple chalcogenide was discussed using modern first-principles calculation technique. Ferroelectricity in the wurtzite structure (P63mc) can be understood by structure distortion from centrosymmetric P63/mmc by relative displacement of cation against anion along c-axis. Calculated potential surface of these compounds shows typical double well between two polar variants. The potential barriers for the ferroelectric polarization switching were estimated to be 0.25 eV/f.u. for ZnO. It is slightly higher energy to the common perovskite ferroelectric compound PbTiO3. Epitaxial tensile strain on the ab-plane (0001) is effective to lower the potential barrier. The potential barrier decreased from 0.25 to 0.15 eV/f.u. by 5% ab-plane expansion in wurtzite structure ZnO. Epitaxial ZnO thin film with donor type defect reduction should be a possible candidate to confirm this ferroelectricity in wurtzite structure simple chalcogenide.

  16. Mechanical switching of ferroelectric domains beyond flexoelectricity

    Science.gov (United States)

    Chen, Weijin; Liu, Jianyi; Ma, Lele; Liu, Linjie; Jiang, G. L.; Zheng, Yue

    2018-02-01

    The resurgence of interest in flexoelectricity has prompted discussions on the feasibility of switching ferroelectric domains 'non-electrically'. In this work, we perform three-dimensional thermodynamic simulations in combination with ab initio calculations and effective Hamiltonian simulations to demonstrate the great effects of surface screening and surface bonding on ferroelectric domain switching triggered by local tip loading. A three-dimensional simulation scheme has been developed to capture the tip-induced domain switching behavior in ferroelectric thin films by adequately taking into account the surface screening effect and surface bonding effect of the ferroelectric film, as well as the finite elastic stiffness of the substrate and the electrode layers. The major findings are as follows. (i) Compared with flexoelectricity, surface effects can be overwhelming and lead to much more efficient mechanical switching caused by tip loading. (ii) The surface-assisted mechanical switching can be bi-directional without the necessity of reversing strain gradients. (iii) A mode transition from local to propagating domain switching occurs when the screening below a critical value. A ripple effect of domain switching appears with the formation of concentric loop domains. (iv) The ripple effect can lead to 'domain interference' and a deterministic writing of confined loop domain patterns by local excitations. Our study reveals the hidden switching mechanisms of ferroelectric domains and the possible roles of surface in mechanical switching. The ripple effect of domain switching, which is believed to be general in dipole systems, broadens our current knowledge of domain engineering.

  17. A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications

    Directory of Open Access Journals (Sweden)

    Ahmad Faraz

    2015-08-01

    Full Text Available The ability to control the growth, texture and orientation of self-nanostructured lead-free Aurivillius phase thin films can in principle, greatly improve their ferroelectric properties, since in these materials the polarization direction is dependent on crystallite orientation. Here, we report the growth of c-plane oriented Bi6Ti3Fe2O18 (B6TFO functional oxide Aurivillius phase thin films on c-plane sapphire substrates by liquid injection chemical vapour deposition (LI-CVD. Microstructural analysis reveals that B6TFO thin films annealed at 850°C are highly crystalline, well textured (Lotgering factor of 0.962 and single phase. Typical Aurivillius plate-like morphology with an average film thickness of 110nm and roughness 24nm was observed. The potential of B6TFO for use as a material in lead-free piezoelectric and ferroelectric data storage applications was explored by investigating local electromechanical (piezoelectric and ferroelectric properties at the nano-scale. Vertical and lateral piezoresponse force microscopy (PFM reveals stronger in-plane polarization due to the controlled growth of the a-axis oriented grains lying in the plane of the B6TFO films. Switching spectroscopy PFM (SS-PFM hysteresis loops obtained at higher temperatures (up to 200°C and at room temperature reveal a clear ferroelectric signature with only minor changes in piezoresponse observed with increasing temperature. Ferroelectric domain patterns were written at 200°C using PFM lithography. Hysteresis loops generated inside the poled regions at room and higher temperatures show a significant increase in piezoresponse due to alignment of the c-axis polarization components under the external electric field. No observable change in written domain patterns was observed after 20hrs of PFM scanning at 200°C, confirming that B6TFO retains polarization over this finite period of time. These studies demonstrate the potential of B6TFO thin films for use in piezoelectric

  18. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  19. Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2010-12-01

    Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

  20. Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

    National Research Council Canada - National Science Library

    Ahn, Charles H

    2006-01-01

    The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

  1. A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

    Directory of Open Access Journals (Sweden)

    S. Riedel

    2016-09-01

    Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

  2. Enormous excitonic effects in bulk, mono- and bi- layers of cuprous halides using many-body perturbation technique

    Science.gov (United States)

    Azhikodan, Dilna; Nautiyal, Tashi

    2017-10-01

    Cuprous halides (CuX with X = Cl, Br, I), intensely studied about four decades ago by experimentalists for excitons, are again drawing attention of researchers recently. Potential of cuprous halide systems for device applications has not yet been fully explored. We go beyond the one-particle picture to capture the two-particle physics (electron-hole interaction to form excitons). We have deployed the full tool kit of many-body perturbation technique, GW approximation + Bethe Salpeter equation, to unfurl the rich excitonic physics of the bulk as well as layers of CuX. The negative spin-orbit contribution at the valence band top in CuCl, compared to CuBr and CuI, is in good agreement with experiments. We note that CuX have exceptionally strong excitons, defying the linear fit (between the excitonic binding energy and band gap) encompassing many semiconductors. The mono- and bi- layers of cuprous halides are predicted to be rich in excitons, with exceptionally large binding energies and the resonance energies in UV/visible region. Hence this work projects CuX layers as good candidates for optoelectronic applications. With advancement of technology, we look forward to experimental realization of CuX layers and harnessing of their rich excitonic potential.

  3. Solid oxide fuel cell bi-layer anode with gadolinia-doped ceria for utilization of solid carbon fuel

    Science.gov (United States)

    Kellogg, Isaiah D.; Koylu, Umit O.; Dogan, Fatih

    Pyrolytic carbon was used as fuel in a solid oxide fuel cell (SOFC) with a yttria-stabilized zirconia (YSZ) electrolyte and a bi-layer anode composed of nickel oxide gadolinia-doped ceria (NiO-GDC) and NiO-YSZ. The common problems of bulk shrinkage and emergent porosity in the YSZ layer adjacent to the GDC/YSZ interface were avoided by using an interlayer of porous NiO-YSZ as a buffer anode layer between the electrolyte and the NiO-GDC primary anode. Cells were fabricated from commercially available component powders so that unconventional production methods suggested in the literature were avoided, that is, the necessity of glycine-nitrate combustion synthesis, specialty multicomponent oxide powders, sputtering, or chemical vapor deposition. The easily-fabricated cell was successfully utilized with hydrogen and propane fuels as well as carbon deposited on the anode during the cyclic operation with the propane. A cell of similar construction could be used in the exhaust stream of a diesel engine to capture and utilize soot for secondary power generation and decreased particulate pollution without the need for filter regeneration.

  4. Metglas-Elgiloy bi-layer, stent cell resonators for wireless monitoring of viscosity and mass loading

    KAUST Repository

    Viswanath, Anupam

    2012-12-21

    This paper presents the design and evaluation of magnetoelastic sensors intended for wireless monitoring of tissue accumulation in peripheral artery stents. The sensors are fabricated from 28 μm thick foils of magnetoelastic 2826MB Metglas™, an amorphous Ni-Fe alloy. The sensor layer consists of a frame and an active resonator portion. The frame consists of 150 μm wide struts that are patterned in the same wishbone array pattern as a 12 mm × 1.46 mm Elgiloy stent cell. The active portion is a 10 mm long symmetric leaf shape and is anchored to the frame at mid length. The active portion nests within the stent cell, with a uniform gap separating the two. A gold-indium eutectic bonding process is used to bond Metglas™ and Elgiloy foils, which are subsequently patterned to form bi-layer resonators. The response of the sensor to viscosity changes and mass loading that precede and accompany artery occlusion is tested in vitro. The typical sensitivity to viscosity of the fundamental, longitudinal resonant frequency at 361 kHz is 427 ppm cP -1 over a 1.1-8.6 cP range. The sensitivity to mass loading is typically between 63000 and 65000 ppm mg-1 with the resonant frequency showing a reduction of 8.1% for an applied mass that is 15% of the unloaded mass of the sensor. This is in good agreement with the theoretical response. © 2013 IOP Publishing Ltd.

  5. Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr0.45Ti0.55O3 thin films on silicon in relation to grain tilt

    Directory of Open Access Journals (Sweden)

    Evert P Houwman, Minh D Nguyen, Matthijn Dekkers and Guus Rijnders

    2013-01-01

    Full Text Available Piezoelectric thin films of PbZr0.45Ti0.55O3 were grown on Si substrates in four different ways, resulting in different crystalline structures, as determined by x-ray analysis. The crystalline structures were different in the spread in tilt angle and the in-plane alignment of the crystal planes between different grains. It is found that the deviations of the ferroelectric polarization loop from that of the ideal rectangular loop (reduction of the remanent polarization with respect to the saturation polarization, dielectric constant of the film, slanting of the loop, coercive field value all scale with the average tilt angle. A model is derived based on the assumption that the tilted grain boundaries between grains affect the film properties locally. This model describes the observed trends. The effective piezoelectric coefficient d33,eff shows also a weak dependence on the average tilt angle for films grown in a single layer, whereas it is strongly reduced for the films deposited in multiple layers. The least affected properties are obtained for the most epitaxial films, i.e. grown on a SrTiO3 epitaxial seed layer, by pulsed laser deposition. These films are intrinsically stable and do not require poling to acquire these stable properties.

  6. Crystallization and electrical characteristics of ferroelectric Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} thin films prepared by a sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Y. [Department of Physics, Jianghan University, Wuhan 430056 (China); Department of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); Lu, C.J. [Department of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); Laboratory of Fiber Materials and Modern Textile, the Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)], E-mail: chaojing_lu@yahoo.com; Qi, Y.J. [Department of Materials Science and Engineering, Hubei University, Wuhan 430062 (China); Zhou, Y.H. [Department of Physics, Jianghan University, Wuhan 430056 (China)

    2008-07-01

    Ferroelectric Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} (BNdT) thin films were deposited on Pt/Ti/SiO{sub 2}/Si substrates using a sol-gel process and Bi(NO{sub 3}){sub 3} was used as one of starting materials. Upon heating the major weight loss of the wet films occurred below 320 deg. C and nitrogen was almost completely removed at 650 deg. C. The films began to crystallize around 520 deg. C. The films annealed at 750 deg. C contain grains of 50-100 nm in diameter. The BNdT film capacitors with Pt top electrodes exhibited well-saturated hysteresis loops with a remanent polarization (2P{sub r}) of 57.4 {mu}C/cm{sup 2} and a coercive field of 108.3 kV/cm. The Pt/BNdT/Pt capacitors did not show any significant fatigue up to 6x10{sup 10} read/write switching cycles, and the retained charges remained nearly constant up to 10{sup 4} s after applying a writing pulse. The leakage current density of the BNdT films is less than 5x10{sup -8} A/cm{sup 2} under a low external field below 73 kV/cm.

  7. Proceedings of the 8th International Symposium on Applications of Ferroelectrics

    Science.gov (United States)

    Liu, M.; Safari, A.; Kingon, A.; Haertling, G.

    1993-02-01

    The eighth International Symposium on the Applications of Ferroelectrics was held in Greenville, SC, on August 30 to Sept 2, 1992. It was attended by approximately 260 scientists and engineers who presented nearly 200 oral and poster papers. The three plenary presentations covered ferroelectric materials which are currently moving into commercial exploitation or have strong potential to do so. These were (1) pyroelectric imaging, (2) ferroelectric materials integrated with silicon for use as micromotors and microsensors and (3) research activity in Japan on high permittivity materials for DRAM's. Invited papers covered such subjects as pyroelectric and electrooptic properties of thin films, photorefractive effects, ferroelectric polymers, piezoelectric transducers, processing of ferroelectrics, domain switching in ferroelectrics, thin film memories, thin film vacuum deposition techniques and the fabrication of chemically prepared PZT and PLZT thin films. The papers continued to reflect the large interest in ferroelectric thin films. It was encouraging that there have been substantial strides made in both the processing and understanding of the films in the last two years. It was equally clear, however, that much still remains to be done before reliable thin film devices will be available in the marketplace.

  8. Ferroelectricity at the nanoscale basics and applications

    CERN Document Server

    Fridkin, Vladimir

    2014-01-01

    This book examines a wide range of ferroelectric materials. It explains the theoretical background of ultrathin ferroelectric films,  presents applications of ferroelectric materials, and displays the mechanism of switching of nanosized ferroelectric films.

  9. Crystal structural evolution and hybrid improper ferroelectricity in Ruddlesden-Popper Ca3-xSrxTi2O7 ceramics

    Science.gov (United States)

    Li, G. J.; Liu, X. Q.; Lu, J. J.; Zhu, H. Y.; Chen, X. M.

    2018-01-01

    Hybrid improper ferroelectricity (HIF) has been proposed as a candidate approach to create room-temperature multiferroic materials with an intrinsic electric-field controlled magnetism effect, and HIFs in bi-layered Ruddlesden-Popper Ca3-xSrxTi2O7 ceramics have been confirmed in the present work. The ferroelectric hysteresis loops are observed in these ceramics at room temperature, and the polar orthorhombic structures with oxygen octahedral rotation and tilt modes have been confirmed by room-temperature X-ray powder diffraction. The amplitudes of oxygen octahedral rotation and tilt modes decrease with the increasing x value, which in turn leads to the decrease of remnant polarization in these ceramics. A first-order phase transition has been evidenced by the differential scanning calorimetry measurement, and the temperature of phase transition decreases linearly with the increasing content of strontium cations. It is found that the amplitude of oxygen octahedral distortion is the dominating factor that affects ferroelectric polarization in partial-ordered bi-layered Ca3Ti2O7-based ceramics.

  10. Ferroelectric properties of alkoxy-derived CaBi4Ti4O15 thin films on Pt-passivated Si

    Science.gov (United States)

    Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi

    2001-02-01

    CaBi4Ti4O15 (CBTi144) thin films were prepared by spin coating a precursor solution of metal alkoxides. As-deposited thin films began crystallization below 550 °C and reached full crystallinity of a single phase of layered perovskite at 650 °C via rapid thermal annealing in oxygen. The 650 °C annealed CBTi144 thin film showed random orientation on Pt-passivated Si substrate and exhibited P-E hysteresis loops. The remanent polarization (Pr) and coercive electric field (Ec) were 9.4 μC/cm2 and 106 kV/cm, respectively, at 11 V. The dielectric constant and loss factor were 300 and 0.033, respectively, at 100 kHz.

  11. Effects of accelerated degradation on metal supported thin film-based solid oxide fuel cell

    DEFF Research Database (Denmark)

    Reolon, R. P.; Sanna, S.; Xu, Yu

    2018-01-01

    A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte and nanostruct......A thin film-based solid oxide fuel cell is deposited on a Ni-based metal porous support by pulsed laser deposition with a multi-scale-graded microstructure design. The fuel cell, around 1 μm in thickness, is composed of a stabilized-zirconia/doped-ceria bi-layered dense electrolyte...

  12. Formation and optical characteristics of sol-gel derived highly oriented ferroelectric (Sr,Ba)Na2O6 optical waveguide thin films

    International Nuclear Information System (INIS)

    Koo, Jun Mo; Kang, Eun Seok; Bae, Byeong Soo

    2003-01-01

    Highly c-axis oriented SBN thin films with various compositions were obtained by sol-gel process. The preferential orientation of sol-gel derived film was enhanced by poling the film with high dc electric field, and growing the film on seeded MgO substrate. The mechanisms of these methods were discussed in this study. For their optical waveguide applications, the optical properties of SBN thin films were investigated. The anisotropy of refractive indices (n o and n e ) of the oriented films decreased certainly as Sr content in the film composition increased

  13. SEM and EBSD characterization of bi-layered functionally graded hard metal composites; REM- und EBSD-Charakterisierung von zweischichtigen, funktionell abgestuften Metallverbundwerkstoffen

    Energy Technology Data Exchange (ETDEWEB)

    Prat, Orlando; Sanhueza, Felipe [Univ. de Concepcion (Chile). Dept. de Ingenieria de Materiales; Suarez, Sebastian [Saarland Univ., Saarbruecken (Germany). Chair of Functional Materials; Garcia, Jose [AB Sandvik Coromant R and D, Stockholm (Sweden)

    2016-11-15

    WC-Co bi-layer functionally graded composites were produced by powder metallurgy techniques. The influence of WC particle size and the grain growth inhibitor on the formation of the functionally graded composite was investigated. SEM images show that all sintered samples present a graded microstructure after sintering, with two side regions of extra-coarse and coarse WC-Co and a clear, dense interface without defects or other phases. EBSD results showed a change of WC particle size depending on the processing and the addition of Mo{sub 2}C. Cobalt binder distribution corresponds to WC particle size. Hardness values correlate to WC particle size and binder content. It is shown that tailored hardness/toughness can be produced by adjusting the WC particle size and binder content on both sides of the bi-layer composite.

  14. Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates

    International Nuclear Information System (INIS)

    Ramírez-Camacho, M.C.; Sánchez-Valdés, C.F.; Gervacio-Arciniega, J.J.; Font, R.; Ostos, C.; Bueno-Baques, D.; Curiel, M.; Sánchez-Llamazares, J.L.

    2017-01-01

    A novel ferromagnetic state coexisting with ferroelectric ordering at room temperature in strained BiFeO 3 (BFO) thin films grown using a sputtering technique on La 0.7 Sr 0.3 MnO 3 /SiO 2 /Si(100) (LSMO/SOS) substrates is reported. The properties of BFO films with different thicknesses (t BFO  = 15, 50, 70, 120, and 140 nm) on 40 nm LSMO layers are explored. [012] out-of-plane highly textured BFO/LSMO stacks grew with rhombohedral structures. LSMO layers are nanostructured in nature, constituted by ferromagnetic single-domain nanoregions induced by the constrain of the SiO 2 surface, with T C ∼200 K and high coercive field (H C ) of ∼1100 Oe at 2.5 K. BFO films grew epitaxially nanostructured on LSMO, exhibiting ∼4 nm spherical nanoregions. The BFO layers show typical antiferromagnetic behavior (in a greater volume fraction) when made thicker (t BFO  > 70 nm). The thinner films (t BFO  < 50 nm) display ferromagnetic behavior with T C  > 400 K, H C  ∼ 1600 Oe for 15 nm and ∼1830 Oe for 50 nm. We propose that such ferromagnetic behavior is originated by the establishment of a new magnetic configuration in the Fe 3+ −O−Fe 3+ sublattice of the BFO structure, induced by strong hybridization at the interface as consequence of superexchange coupling interactions with the ferromagnetic Mn 3+ −O−Mn 3+ /Mn 4+ sublattice of LSMO. All BFO layers show excellent ferroelectric and piezoelectric properties (coercive field ∼ 740 kV/cm, and d 33  = 23 p.m./V for 50 nm; ∼200 kV/cm and 55 p.m./V for 140 nm), exhibiting 180° and 109° DWs structures depending on the thickness. Such multiferroic properties predict the potential realization of new magneto-electronic devices integrated with Si technology.

  15. Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

    DEFF Research Database (Denmark)

    Xu, Zhang-Cheng; Zhang, Ya-Ting; Hvam, Jørn Märcher

    2009-01-01

    The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which...... can be explained by considering the resonant F¨orster energy transfer between the wetting layer states at elevated temperatures....

  16. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    Science.gov (United States)

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  17. Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X. L.; Wang, J. L., E-mail: jlwang@mail.sitp.ac.cn, E-mail: lin-tie@mail.sitp.ac.cn; Tian, B. B.; Liu, B. L.; Wang, X. D.; Sun, S.; Zou, Y. H.; Lin, T., E-mail: jlwang@mail.sitp.ac.cn, E-mail: lin-tie@mail.sitp.ac.cn; Sun, J. L.; Meng, X. J.; Chu, J. H. [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083 (China); University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049 (China)

    2014-12-01

    An actuator with a high piezoelectric response, the ferroelectric polymer multilayer actuator, is described. The ferroelectric polymer multilayers consisting of alternative ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and relaxor poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) (P(VDF-TrFE-CFE)) terpolymer with different periodicities and fixed total thickness are prepared by the Langmuir-Blodgett technique. Both X-ray diffraction and Raman spectroscopic measurements indicate that the structure of the multilayer with thin alternating layer is similar to that of the ferroelectric copolymer. Compared with that of the copolymer, it is found that the piezoelectric coefficient of the multilayer could be improved by 57%. We attributed the enhanced piezoelectric response of the multilayers to the internal electric fields that arises from the electrostatic couplings between different layers.

  18. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

  19. Structural consequences of ferroelectric nanolithography.

    Science.gov (United States)

    Jo, Ji Young; Chen, Pice; Sichel, Rebecca J; Baek, Seung-Hyub; Smith, Ryan T; Balke, Nina; Kalinin, Sergei V; Holt, Martin V; Maser, Jörg; Evans-Lutterodt, Kenneth; Eom, Chang-Beom; Evans, Paul G

    2011-08-10

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O(3) thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  20. Asymmetric bi-layer PFSA membranes as model systems for the study of water management in the PEMFC.

    Science.gov (United States)

    Peng, Z; Peng, A Z; Morin, A; Huguet, P; Lanteri, Y; Deabate, S

    2014-10-14

    New bi-layer PFSA membranes made of Nafion® NRE212 and Aquivion™ E79-05s with different equivalent weights are prepared with the aim of managing water repartition in the PEMFC. The membrane water transport properties, i.e. back-diffusion and electroosmosis, as well as the electrochemical performances, are compared to those of state-of-art materials. The actual water content (the inner water concentration profile across the membrane thickness) is measured under operation in the fuel cell by in situ Raman microspectroscopy. The orientation of the equivalent weight gradient with respect to the water external gradient and to the proton flow direction affects the membrane water content, the water transport ability and, thus, the fuel cell performances. Higher power outputs, related to lower ohmic losses, are observed when the membrane is assembled with the lower equivalent weight layer (Aquivion™) at the anode side. This orientation, corresponding to enhanced water transport by back-flow while electroosmosis remains unaffected, results in the higher hydration of the membrane and of the anode active layer during operation. Also, polarization data suggest a different water repartition in the fuel cell along the on-plane direction. Even if the interest in multi-layer PFSA membranes as perspective electrolytes for PEMFCs is not definitively attested, these materials appear to be excellent model systems to establish relationships between the membrane transport properties, the water distribution in the fuel cell and the electrochemical performances. Thanks to the micrometric resolution, in situ Raman microspectroscopy proves to be a unique tool to measure the actual hydration of the membrane at the surface swept by the hydrated feed gases during operation, so that it can be used as a local probe of the water concentration evolution along the gas distribution channels according to changing working conditions.

  1. Surface modification and effects of organic ferroelectrics with blending hyperbranched polymer

    Science.gov (United States)

    Morimoto, Masahiro; Ito, Genta; Koshiba, Yasuko; Ishida, Kenji

    2018-03-01

    The surface modification of ferroelectric films is expected to improve the properties of fatigue, which is important for application in memory devices. In this study, we fabricated thin insulators at an electrode-ferroelectric interface by the phase separation of a ferroelectric polymer and an insulator. The surface and bulk characterization indicated that the insulators consisting of a hyperbranched polymer spontaneously phase-separated from the organic ferroelectric polymer by thermal annealing. It was revealed that the separated layers were composed of three layers and had a lower surface energy than the ferroelectric films. The annealing time evolution of the surface contact angle and dielectric spectra indicated the phase separation dynamics and structural behavior. The fatigue properties of the surface-modified ferroelectric films improved, but the remanent polarization and coercive electric field value resulted in a trade-off.

  2. Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.

    Science.gov (United States)

    Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; van Bentum, Ralf; Mikolajick, Thomas; Slesazeck, Stefan

    2017-02-01

    The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices. Although both experimental and theoretical studies on this new ferroelectric system have been undertaken, much remains to be unveiled regarding its domain landscape and switching kinetics. Here we demonstrate that the switching of single domains can be directly observed in ultrascaled ferroelectric field effect transistors. Using models of ferroelectric domain nucleation we explain the time, field and temperature dependence of polarization reversal. A simple stochastic model is proposed as well, relating nucleation processes to the observed statistical switching behavior. Our results suggest novel opportunities for hafnium oxide based ferroelectrics in nonvolatile memory devices.

  3. Phase transition, ferroelectric, and dielectric properties of layer-structured perovskite CaBi3Ti3O12-δ thin films

    Science.gov (United States)

    Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi

    2001-07-01

    Thin films of a bismuth-based layer-structured perovskite compound with a number of oxygen octahedron along the c axis between Bi-O layers of three, CaBi3Ti3O12-δ, were prepared using a mixture solution of complex alkoxides. The films crystallized below 550 °C. The crystal structure and surface morphology of these films changed between 600 and 650 °C. The 650 °C-annealed thin film consisted of well-developed grains and exhibited polarization-electric hysteresis loops. The remanent polarization and coercive electric field were 8.5 μC/cm2 and 124 kV/cm, respectively, at 7 V. The dielectric constant and loss factor were about 250 and 0.048, respectively, at 100 kHz.

  4. Losses in Ferroelectric Materials

    Science.gov (United States)

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  5. Ferroelectric domains and phase transition of sol-gel processed epitaxial Sm-doped BiFeO3 (001 thin films

    Directory of Open Access Journals (Sweden)

    Zhen Zhou

    2018-03-01

    Full Text Available BiFeO3, a room-temperature multiferroic material, has recently been increasingly applied as a potential lead-free piezoelectric material due to its large piezoelectricity achieved by doping. In this work, 12% Sm-doped BiFeO3 epitaxial thin films were fabricated on Nb-doped SrTiO3 (001 single crystal substrates via sol-gel method. The epitaxy was verified by reciprocal space mapping (RSM and transmission electron microscope (TEM. The TEM results indicated the coexistence of R3c and Pbam phases in the film. The domains and piezoelectric properties from room temperature to 200 °C were characterized by piezoresponse force microscopy (PFM. Domains became active from 110 °C to 170 °C, and domain configurations changed obviously. A partially fading piezoresponse indicated the emergence of antiferroelectric Pbam. The in-situ domain analysis suggested that the phase transition was accompanied by domain wall motion. Switching spectroscopy PFM (SS-PFM was further conducted to investigate the piezoresponse during the phase transition. Anomalous responses were found in both ON and OFF states at 170 °C, and the film exhibits typical antiferroelectric behavior at 200 °C, implying that the completion of phase transition and structure turned to the Pbam phase. This work revealed the origin of the high piezoresponse of Sm-doped BiFeO3 thin films at the morphotropic phase boundary (MPB.

  6. Ferroelectric lanthanum-substituted Bi4Ti3O12 thin films fabricated on p-type Si(100) substrates by a sol-gel method

    International Nuclear Information System (INIS)

    Bae, Ji Cheul; Kim, Sang Su; Kim, Won-Jeong; Choi, Eun Kyung; Song, Tae Kwon

    2004-01-01

    Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films have been successfully fabricated on p-type Si(100) substrates by a sol-gel spin-coating method. The microstructures and surface morphologies of the BLT thin films on p-type Si(100) substrates annealed at 700 deg. C for 30 min in oxygen atmosphere were examined by an X-ray diffractometer and a scanning electron microscope, respectively. The BLT/p-type Si(100) capacitors annealed at 700 deg. C for 30 min exhibit good capacitance-voltage (C-V) characteristics and large memory window of approximately 6 V with a sweep voltage of ±16 V. From the frequency dependency of C-V characteristics of the BLT/p-type Si(100) capacitors, the fixed charge density (N fc ) at the interface of BLT/p-type Si(100) was calculated as approximately 1.24x10 12 /cm 2 . The humps and valleys observed in C-V curves were interpreted by introducing the electron charge injection and barrier-lowering effect at the interface of BLT/p-type Si(100). Based on the voltage and the frequency dependent C-V measurements, the memory windows of BLT/p-type Si(100) capacitor are significantly influenced by the electron charge injection and polarization reverse

  7. Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Minh D. Nguyen

    2016-08-01

    Full Text Available Pb0.9La0.1(Zr0.52Ti0.48O3 (PLZT relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco of 13.7 J/cm3 together with a high energy efficiency (η of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48O3 ferroelectric thin films (Ureco = 9.2 J/cm3 and η = 56.4% which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

  8. Ferroelectrics principles, structure and applications

    CERN Document Server

    Merchant, Serena

    2014-01-01

    Ferroelectric physics is a theory on ferroelectric phase transition for explaining various related phenomena, which is different from dielectric physics. Ferroelectric materials are important functional materials for various applications such as NVRAMs, high energy density capacitors, actuators, MEMs, sonar sensors, microphones and scanning electron microscopes (SEM). This book investigates the dielectric, ferroelectric and energy storage properties of barium zirconate-titanate/barium calcium-titanate (BZT-BCT) based ceramic for high energy density capacitors. It also compares the energy storage capabilities of ceramic powders with polymer-ceramic nanocomposites; and discusses dielectric properties of ferroelectricity in composition distributions.

  9. Proceedings of the International Symposium on Integrated Ferroelectrics (5th) Held at Colorado Springs, Colorado on April 1993. Volume 5, Number 3. Part 4.

    Science.gov (United States)

    FERROELECTRIC FILMS; HIGH-PERMITTIVITY LEAD-BASED PEROVSKITE DIELECTRICS FOR DRAM APPLICATIONS; DEPOSITION OF THIN FILM ZnO WITH CHARACTERISTICS CLOSE...TO BULK CRYSTAL ZnO ; GROWTH AND ELECTRICAL PROPERTIES OF Pb(Zr,Ti)O3 THIN FILMS BY SPUTTERING USING AN ALLOY TARGET; and MODELING OF METAL-FERROELECTRIC-SEMICONDUCTOR FIELD EFFECT TRANSISTOR SUBTHRESHOLD CURRENT.

  10. Controlling the properties of ferroelectric-nickelate interfaces

    Science.gov (United States)

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit; Han, Myung-Geun; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick; Ahn, Charles

    2015-03-01

    Ferroelectrics are a class of materials that exhibit a stable, reversible polarization making them useful for non-volatile electronic devices. In devices consisting of thin film ferroelectric PZT acting as a gate and a thin film of the conductive oxide LaNiO3 grown on LaAlO3(001) acting as a channel, we have realized a large change in room temperature channel resistance by switching the ferroelectric polarization. The effect of switching the polarization of the ferroelectric is to modify the electronic structure of the interface between the gate and channel, resulting in conduction in the otherwise insulating ferroelectric. Here, we discuss how changing the epitaxial strain and interface termination of LaNiO3 can result in larger changes in resistivity. The epitaxial strain is varied by growing the devices on LaAlO3 for tensile strain and SrTiO3 for compressive strain. An interface termination of either an atomic layer of NiO2 or LaO is achieved via atomic layering using oxygen plasma assisted molecular beam epitaxy (MBE).

  11. Insight into magnetic, ferroelectric and elastic properties of strained BiFeO{sub 3} thin films through Mössbauer spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Agbelele, A.; Jouen, S.; Le Breton, J.-M.; Juraszek, J., E-mail: jean.juraszek@univ-rouen.fr [Normandie Univ., UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, 76000 Rouen (France); Sando, D. [Unité Mixte de Physique CNRS/Thales, 1 av. Fresnel, 91767 Palaiseau & Université Paris-Sud, 91405 Orsay (France); School of Materials Science and Engineering, University of New South Wales, 2052 Sydney (Australia); Infante, I. C.; Dkhil, B. [Laboratoire SPMS, Centrale-Supélec, CNRS-UMR 8580, Université Paris-Saclay, 92290 Châtenay-Malabry (France); Carrétéro, C.; Barthélémy, A.; Bibes, M. [Unité Mixte de Physique CNRS/Thales, 1 av. Fresnel, 91767 Palaiseau & Université Paris-Sud, 91405 Orsay (France)

    2016-07-25

    We have studied the magnetic order of highly strained (001)-oriented BiFeO{sub 3} (BFO) thin films using {sup 57}Fe Conversion Electron Mössbauer Spectrometry. From 90 K to 620 K the films exhibit a collinear antiferromagnetic structure, in contrast with the cycloidal structure observed in bulk BFO. Moreover, we find that both the planar magnetic anisotropy for compressive strain and out-of-plane anisotropy for tensile strain persist from 90 K up to the Néel temperature (T{sub N}), which itself shows only a weak strain dependence. An analysis of the line asymmetry of the paramagnetic doublet for temperatures above T{sub N} is used to reveal the strain-dependent rotation of the polarization direction, consistent with previous observations. Our results show that the lattice dynamics in BFO films are strongly strain-dependent, offering avenues toward acoustic phonon devices. Finally, we use the versatility of Mössbauer spectroscopy technique to reveal various multi-property features including magnetic states, polarization direction and elastic strain.

  12. Composition dependence of the ferroelectric properties of lanthanum-modified bismuth titanate thin films grown by using pulsed-laser deposition

    CERN Document Server

    Bu, S D; Park, B H; Noh, T W

    2000-01-01

    Lanthanum-modified bismuth titanate, Bi sub 4 sub - sub x La sub x Ti sub 3 O sub 1 sub 2 (BLT), thin films with a La concentration of 0.25<=x<=1.00 were grown on Pt/Ti/SiO sub 2 /Si substrates by using pulsed-laser deposition. The BLT films showed well-saturated polarization-electric field curves whose remnant polarizations were 16.1 mu C/cm sup 2 , 27.8 mu C/cm sup 2 , 19.6 mu C/cm sup 2 , and 2.7 mu C/cm sup 2 , respectively, for x=0.25, 0.05, 0.75, and 1.00. The fatigue characteristics became better with increasing x up to 0.75. The Au/BLT/Pt capacitor with a La concentration of 0.50 showed an interesting dependence of the remanent polarization on the number of repetitive read/write cycles. On the other hand, the capacitor with a La concentration of 0.75 showed fatigue-free characteristics.

  13. Development of Microwave-Excited Plasma-Enhanced Metal-Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2

    Science.gov (United States)

    Takahashi, Ichirou; Funaiwa, Kiyoshi; Azumi, Keita; Yamashita, Satoru; Shirai, Yasuyuki; Hirayama, Masaki; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro

    2007-04-01

    Sr2(Ta1-x,Nbx)2O7 (STN; x = 0.3) is suitable for use as ferroelectric gate field-effect transistors (FETs) for one-transistor-type ferroelectric memory devices, because it has a low dielectric constant. For applications using metal-ferroelectric-insulator-semiconductor (MFIS) FETs, crystallization of ferroelectric film on insulator is necessary. Perovskite STN can be successfully obtained on amorphous SiO2 by ferroelectric-multilayer-stack (FMLS) deposition, which uses alternating steps of STN sputtering deposition and oxygen radical treatment. In this study, we report on a newly developed microwave-excited plasma-enhanced metal-organic chemical vapor deposition (MOCVD) system, in which STN can be deposited in radical oxygen atmosphere. We succeeded in the fabrication of STN on amorphous SiO2 in a single process. The IrO2/STN (200 nm)/SiO2 (10 nm)/p-type Si device shows capacitance-voltage (C-V) hysteresis curves and a memory window of 1.2 V with a 5 V writing operation.

  14. Effects of ferroelectric-poling-induced strain on the electronic transport and magnetic properties of (001)- and (111)-oriented La{sub 0.5}Ba{sub 0.5}MnO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, X.Y. [Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zheng, M.; Zhu, Q.X.; Yang, M.M.; Li, X.M.; Shi, X. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Yuan, G.L., E-mail: yuanguoliang@mail.njust.edu.cn [Department of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Wang, Y.; Chan, H.L.W. [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China); Li, X.G. [Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Luo, H.S. [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zheng, R.K., E-mail: zrk@ustc.edu [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2014-04-01

    We epitaxially grew La{sub 0.5}Ba{sub 0.5}MnO{sub 3} (LBMO) films on (001)- and (111)-oriented ferroelectric single-crystal substrates and reduced the in-plane tensile strain of LBMO films by poling the ferroelectric substrates along the 〈001〉 or 〈111〉 direction. Upon poling, a large decrease in the resistance and a considerable increase in the magnetization, Curie temperature, and magnetoresistance were observed for the LBMO film, which are driven by interface strain coupling. Such strain effects can be significantly enhanced by the application of a magnetic field. An overall analysis of the findings reveals that the mutual interaction between the strain and the magnetic field is mediated by the electronic phase separation which is sensitive to both strain and magnetic field. Our findings highlight that the electronic phase separation is crucial in understanding the electric-field-manipulated strain effects in manganite film/ferroelectric crystal heterostructures. - Highlights: • La{sub 0.5}Ba{sub 0.5}MnO{sub 3} films were epitaxially grown on ternary ferroelectric single crystals. • Ferroelectric poling modifies the strain and physical properties of films. • Magnetic field enhances the strain effects of films. • Phase separation is crucial to understand the magnetic-field-tuned strain effect.

  15. Ferroelectric quantum criticality

    International Nuclear Information System (INIS)

    Rowley, S.; Spalek, L.; Scott, J.F.; Lonzarich, G.G.; Saxena, S.S.

    2007-01-01

    Full text: Materials tuned to the neighbourhood of a zero temperature phase transition often show the emergence of novel quantum phenomena. Much of the effort to study these new emergent effects, like the break down of the conventional Fermi-liquid theory of metals, has been focused in narrow band electronic systems. Ferroelectric crystals provide another class of materials in which to study quantum criticality and its resulting effects. In many cases the ferroelectric phase can be tuned to absolute zero using hydrostatic pressure. Close to such a zero temperature phase transition, the dielectric constant and other quantities change into radically unconventional forms due to the fluctuations experienced in this region. Measurements in pure single crystals of SrTi1 6 O 3 and SrTi1 8 O 3 will be shown and a simple model for describing the Ferroelectric quantum critical point will be outlined. The expected 1/T 2 dependence of the dielectric constant in SrTi1 6 O 3 over a wide temperature range at low temperatures will be highlighted as well as some further novel features. Looking to the future, one might imagine that quantum paraelectric fluctuations could lead to new low temperature states and mediate novel interactions in ferroelectric crystals supporting itinerant electrons.(authors)

  16. Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

    DEFF Research Database (Denmark)

    Phatak, C.; Petford-Long, A. K.; Beleggia, Marco

    2014-01-01

    Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present...... a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift...

  17. Nonlinear piezoelectricity in epitaxial ferroelectrics at high electric fields.

    Science.gov (United States)

    Grigoriev, Alexei; Sichel, Rebecca; Lee, Ho Nyung; Landahl, Eric C; Adams, Bernhard; Dufresne, Eric M; Evans, Paul G

    2008-01-18

    Nonlinear effects in the coupling of polarization with elastic strain have been predicted to occur in ferroelectric materials subjected to high electric fields. Such predictions are tested here for a PbZr0.2Ti0.8O3 ferroelectric thin film at electric fields in the range of several hundred MV/m and strains reaching up to 2.7%. The piezoelectric strain exceeds predictions based on constant piezoelectric coefficients at electric fields from approximately 200 to 400 MV/m, which is consistent with a nonlinear effect predicted to occur at corresponding piezoelectric distortions.

  18. Modeling of charge switching in ferroelectric capacitors.

    Science.gov (United States)

    Sun, Shunming; Kalkur, Thottam S

    2004-07-01

    To simulate charge switching in ferroelectric capacitors, a pair of exponential growth and decay currents is mapped to the process of polarization reversal. This is based on the fact that these exponential currents [i.e., i = I(m) e(t/tau) (t or = 0)], are completely specified by two constants I(m) and tau and each accommodates an integral charge Q = I(m) x tau. Equating this charge to the remanent spontaneous polarization allows for the modeling of switching current. For practical circuit simulations for charge switching, this modeling of switching current is simplified to an exponential decay current whose integral charge is set equal to the total reversed spontaneous polarization. This is because an exponential decay current can be conveniently implemented by charging a series resistor and capacitor (RC) circuit with a pulse-voltage source. The voltage transitions of the pulse source are associated with the polarization reversal and can be controlled with a noninverting Schmitt trigger that toggles at the positive and negative coercive voltages of a ferroelectric capacitor. The final circuit model incorporates such electrical and geometrical parameters as capacitance, remanent spontaneous polarization, coercive field, electrode area, and film thickness of a ferroelectric, thin-film capacitor.

  19. A bi-layer model for nondestructive prediction of soluble solids content in apple based on reflectance spectra and peel pigments.

    Science.gov (United States)

    Tian, Xi; Li, Jiangbo; Wang, Qingyan; Fan, Shuxiang; Huang, Wenqian

    2018-01-15

    Hyperspectral imaging technology was used to investigate the effect of various peel colors on soluble solids content (SSC) prediction model and build a SSC model insensitive to the color distribution of apple peel. The SSC and peel pigments were measured, effective wavelengths (EWs) of SSC and pigments were selected from the acquired hyperspectral images of the intact and peeled apple samples, respectively. The effect of pigments on the SSC prediction was studied and optimal SSC EWs were selected from the peel-flesh layers spectra after removing the chlorophyll and anthocyanin EWs. Then, the optimal bi-layer model for SSC prediction was built based on the finally selected optimal SSC EWs. Results showed that the correlation coefficient of prediction, root mean square error of prediction and selected bands of the bi-layer model were 0.9560, 0.2528 and 41, respectively, which will be more acceptable for future online SSC prediction of various colors of apple. Copyright © 2017 Elsevier Ltd. All rights reserved.

  20. Bi-layered self-emulsifying pellets prepared by co-extrusion and spheronization: influence of formulation variables and preliminary study on the in vivo absorption.

    Science.gov (United States)

    Iosio, Tamara; Voinovich, Dario; Grassi, Mario; Pinto, João F; Perissutti, Beatrice; Zacchigna, Marina; Quintavalle, Ugo; Serdoz, Francesca

    2008-06-01

    The aim of this work was to produce by co-extrusion-spheronization pellets with two cohesive layers, one of them containing a self-emulsifying system for vinpocetine, a poorly water soluble model drug. Two layers were prepared: an inert layer of microcrystalline cellulose, lactose and water and a second one wetted with the self-emulsifying system. Different formulations of both layers were tested, evaluating the effects of formulation variables with an experimental design. The screening amongst formulations was performed preparing rod extrudates and using the extrusion profiles to assess their suitability for extrusion and to anticipate quality of the spheronized extrudates. Tubular extrudates and co-extrudates/spheronized pellets were then produced. Two types of bi-layered pellets were prepared: type I with the self-emulsifying system internally and the inert matrix externally, whereas type II vice versa. The pellets were characterized for sizing and shape, density, hardness, in vitro dissolution and disintegration and released droplets size and in vivo tests. Although both types of pellets demonstrated adequate morphological and technological characteristics, pellets type II revealed an improved drug solubility and in vivo bioavailability. These preliminary technological and pharmacokinetic data demonstrated that co-extrusion/spheronization is a viable technology to produce bi-layered cohesive self-emulsifying pellets of good quality and improved in vivo bioavailability.

  1. Rational design of a bi-layered reduced graphene oxide film on polystyrene foam for solar-driven interfacial water evaporation

    KAUST Repository

    Shi, Le

    2016-12-20

    Solar-driven water evaporation has been emerging as a highly efficient way for utilizing solar energy for clean water production and wastewater treatment. Here we rationally designed and fabricated a bi-layered photothermal membrane with a porous film of reduced graphene oxide (rGO) on the top and polystyrene (PS) foam at the bottom. The top porous rGO layer acts as a light absorber to harvest and convert light efficiently to thermal energy and the bottom PS layer, which purposefully disintegrates water transport channels, acts as an excellent thermal barrier to minimize heat transfer to the nonevaporative bulk water. The optimized bi-layered membrane was able to produce water evaporation rate as high as 1.31 kg m−2 h−1 with light to evaporation conversion efficiency as high as 83%, which makes it a promising photothermal material in the literature. Furthermore, the experiments and theoretical simulation were both conducted to examine the relationship between the overall energy efficiency and the depth of the photothermal material underwater and the experimental and simulations results coincided with each other. Therefore, this work provides systematic evidence in support of the concept of the interfacial heating and shines important light on practical applications of solar-driven processes for clean water production.

  2. Evaluation of Ferroelectric Materials for Memory Applications

    Science.gov (United States)

    1990-06-01

    1014 1-Mev neutrons/cm 2 without performance degradation [Ref. 4: p. 14001 . Basically, the radiation hardness of a ferroelectric memory device is...shows this relationship for PZT thin- films [Ref. 29: p. 790, Fig. 6]. 250 ,5200 , toA (Tc-T)m ..? - Tc- 663K ISO m 1.73 ± 0.21 I- I-s 10I - 0 -50 , o)0 I...decreases as the material is brought toward the transition temperature from below and the ratio of the c axes (shorter axes) to the a axes (longer axes

  3. Ferroelectric memory based on molybdenum disulfide and ferroelectric hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Xia, Qiangfei; Zhu, Wenjuan

    Recently, ferroelectric hafnium oxide (HfO2) was discovered as a new type of ferroelectric material with the advantages of high coercive field, excellent scalability (down to 2.5 nm), and good compatibility with CMOS processing. In this work, we demonstrate, for the first time, 2D ferroelectric memories with molybdenum disulfide (MoS2) as the channel material and aluminum doped HfO2 as the ferroelectric gate dielectric. A 16 nm thick layer of HfO2, doped with 5.26% aluminum, was deposited via atomic layer deposition (ALD), then subjected to rapid thermal annealing (RTA) at 1000 °C, and the polarization-voltage characteristics of the resulting metal-ferroelectric-metal (MFM) capacitors were measured, showing a remnant polarization of 0.6 μC/cm2. Ferroelectric memories with embedded ferroelectric hafnium oxide stacks and monolayer MoS2 were fabricated. The transfer characteristics after program and erase pulses revealed a clear ferroelectric memory window. In addition, endurance (up to 10,000 cycles) of the devices were tested and effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, were observed. This research can potentially lead to advances of 2D materials in low-power logic and memory applications.

  4. Molecular ferroelectrics: where electronics meet biology.

    Science.gov (United States)

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-12-28

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

  5. Ferroelectric Negative Capacitance Domain Dynamics

    OpenAIRE

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2017-01-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transien...

  6. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Varo, Pilar [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Bertoluzzi, Luca [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Bisquert, Juan, E-mail: bisquert@uji.es [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Alexe, Marin [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Coll, Mariona [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia (Spain); Huang, Jinsong [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States); Jimenez-Tejada, Juan Antonio [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Kirchartz, Thomas [IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Faculty of Engineering and CENIDE, University of Duisburg–Essen, Carl-Benz-Str. 199, 47057 Duisburg (Germany); Nechache, Riad; Rosei, Federico [INRS—Center Énergie, Matériaux et Télécommunications, Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2 (Canada); Yuan, Yongbo [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States)

    2016-10-07

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  7. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Directory of Open Access Journals (Sweden)

    Masaharu Kobayashi

    2016-02-01

    Full Text Available Internet-of-Things (IoT technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  8. Epitaxial growth of Co(0 0 0 1)hcp/Fe(1 1 0)bcc magnetic bi-layer films on SrTiO3(1 1 1) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Shikada, Kouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2008-01-01

    Co(0 0 0 1) hcp /Fe(1 1 0) bcc epitaxial magnetic bi-layer films were successfully prepared on SrTiO 3 (1 1 1) substrates. The crystallographic properties of Co/Fe epitaxial magnetic bi-layer films were investigated. Fe(1 1 0) bcc soft magnetic layer grew epitaxially on SrTiO 3 (1 1 1) substrate with two type variants, Nishiyama-Wasserman and Kurdjumov-Sachs relationships. An hcp-Co single-crystal layer is obtained on Ru(0 0 0 1) hcp interlayer, while hcp-Co layer formed on Au(1 1 1) fcc or Ag(1 1 1) fcc interlayer is strained and may involve fcc-Co phase. It has been shown possible to prepare Co/Fe epitaxial magnetic bi-layer films which can be usable for patterned media application

  9. On the persistence of polar domains in ultrathin ferroelectric capacitors

    Science.gov (United States)

    Zubko, Pavlo; Lu, Haidong; Bark, Chung-Wung; Martí, Xavi; Santiso, José; Eom, Chang-Beom; Catalan, Gustau; Gruverman, Alexei

    2017-07-01

    The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferroelectric heterostructures: epitaxial single-crystalline BaTiO3 films sandwiched between the most habitual perovskite electrodes, SrRuO3, on top of the most used perovskite substrate, SrTiO3. We use a combination of piezoresponse force microscopy, dielectric measurements and structural characterization to provide conclusive evidence for the ferroelectric nature of the relaxed polarization state in ultrathin BaTiO3 capacitors. We show that even the high screening efficiency of SrRuO3 electrodes is still insufficient to stabilize polarization in SrRuO3/BaTiO3/SrRuO3 heterostructures at room temperature. We identify the key role of domain wall motion in determining the macroscopic electrical properties of ultrathin capacitors and discuss their dielectric response in the light of the recent interest in negative capacitance behaviour.

  10. Ferroelectricity the fundamentals collection

    CERN Document Server

    Jimenez, Basilio

    2008-01-01

    This indispensable collection of seminal papers on ferroelectricity provides an overview over almost a hundred years of basic and applied research. Containing historic contributions from renowned authors, this book presents developments in an area of science that is still rapidly growing. Although primarily aimed at scientists and academics involved in research, this will also be of use to students as well as newcomers to the field.

  11. A Review of Domain Modelling and Domain Imaging Techniques in Ferroelectric Crystals.

    Science.gov (United States)

    Potnis, Prashant R; Tsou, Nien-Ti; Huber, John E

    2011-02-16

    The present paper reviews models of domain structure in ferroelectric crystals, thin films and bulk materials. Common crystal structures in ferroelectric materials are described and the theory of compatible domain patterns is introduced. Applications to multi-rank laminates are presented. Alternative models employing phase-field and related techniques are reviewed. The paper then presents methods of observing ferroelectric domain structure, including optical, polarized light, scanning electron microscopy, X-ray and neutron diffraction, atomic force microscopy and piezo-force microscopy. Use of more than one technique for unambiguous identification of the domain structure is also described.

  12. A Review of Domain Modelling and Domain Imaging Techniques in Ferroelectric Crystals

    Directory of Open Access Journals (Sweden)

    John E. Huber

    2011-02-01

    Full Text Available The present paper reviews models of domain structure in ferroelectric crystals, thin films and bulk materials. Common crystal structures in ferroelectric materials are described and the theory of compatible domain patterns is introduced. Applications to multi-rank laminates are presented. Alternative models employing phase-field and related techniques are reviewed. The paper then presents methods of observing ferroelectric domain structure, including optical, polarized light, scanning electron microscopy, X-ray and neutron diffraction, atomic force microscopy and piezo-force microscopy. Use of more than one technique for unambiguous identification of the domain structure is also described.

  13. Bi-layered zirconia/fluor-apatite bridges supported by ceramic dental implants: a prospective case series after thirty months of observation.

    Science.gov (United States)

    Spies, Benedikt Christopher; Witkowski, Siegbert; Butz, Frank; Vach, Kirstin; Kohal, Ralf-Joachim

    2016-10-01

    The aim of this study was to determine the success and survival rate of all-ceramic bi-layered implant-supported three-unit fixed dental prostheses (IS-FDPs) 3 years after implant placement. Thirteen patients (seven males, six females; age: 41-78 years) received two one-piece ceramic implants (alumina-toughened zirconia) each in the region of the premolars or the first molar and were finally restored with adhesively cemented bi-layered zirconia-based IS-FDPs (3 in the maxilla, 10 in the mandible) composed of CAD/CAM-fabricated zirconia frameworks pressed-over with fluor-apatite glass-ceramic ingots. At prosthetic delivery and the follow-ups after 1, 2 and 3 years, the restorations were evaluated using modified United States Public Health Service (USPHS) criteria. Restorations with minor veneer chippings, a small-area occlusal roughness, slightly soundable restoration margins, minimal contour deficiencies and tolerable color deviations were regarded as success. In case of more distinct defects that could, however, be repaired to a clinically acceptable level, IS-FDPs were regarded as surviving. Kaplan-Meier plots were used for the success/survival analyses. To verify an impact on subjective patients' perceptions, satisfaction was evaluated by visual analog scales (VAS). All patients were seen 3 years after implant installation. No IS-FDP had to be replaced, resulting in 100% survival after a mean observation period of 29.5 months (median: 30.7). At the 3-year follow-up, 7/13 IS-FDPs showed a veneer chipping, 13/13 an occlusal roughness and 12/13 minimal deficiencies of contour/color. Since six restorations showed a major chipping and/or a major occlusal roughness, the Kaplan-Meier success rate was 53.8%. However, patients' significantly improved perceptions of function, esthetics, sense, and speech at prosthetic delivery remained stable over time. Bi-layered zirconia/fluor-apatite IS-FDPs entirely survived the observation period but showed a high frequency of

  14. Nanoscale organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

    2014-01-01

    Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

  15. Single crystal ternary oxide ferroelectric integration with Silicon

    Science.gov (United States)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  16. Peak divergence in the curve of magnetoelectric coefficient versus dc bias magnetic field at resonance region for bi-layer magnetostrictive/piezoelectric composites

    Directory of Open Access Journals (Sweden)

    Z. J. Zuo

    2013-12-01

    Full Text Available Magnetoelectric (ME coefficient dependence on the bias magnetic field at resonance frequencies for the bi-layered bonded Terfenol-D/Pb(Zr,TiO3 composite was investigated. The resonance frequency decreases first and then increases with the bias magnetic field (HDC, showing a “V” shape in the range of 0 ∼ 5 kOe. Below the resonance frequency, the pattern of ME coefficient dependence on the HDC shows a single peak, but splits into a double-peak pattern when the testing frequency increases into a certain region. With increasing the frequency, a divergent evolution of the HDC patterns was observed. Domain motion and ΔE effect combined with magnetostriction-piezoelectric coupling effect were employed to explain this experimental result.

  17. Structure and Dynamics of Domains in Ferroelectric Nanostructures. In-situ TEM Studies

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Xiaoqing [Univ. of Michigan, Ann Arbor, MI (United States)

    2015-06-30

    The goal of this project was to explore the structure and dynamic behaviors of ferroelectric domains in ferroelectric thin films and nanostructures by advanced transmission electron microscopy (TEM) techniques in close collaboration with phase field modeling. The experimental techniques used include aberration-corrected sub-Å resolution TEM and in-situ TEM using a novel scanning tunneling microscopy (STM) - TEM holder that allows the direct observation of nucleation and dynamic evolution of ferroelectric domains under applied electric field. Specifically, this project was aimed to (1) to study the roles of static electrical boundary conditions and electrical charge in controlling the equilibrium domain structures of BiFeO3 thin films with controlled substrate constraints, (2) to explore the fundamental mechanisms of ferroelectric domain nucleation, growth, and switching under an applied electric field in both uniform thin films and nanostructures, and to understand the roles of crystal defects such as dislocations and interfaces in these processes, (3) to understand the physics of ferroelectric domain walls and the influence of defects on the electrical switching of ferroelectric domains.

  18. SHEAR BOND STRENGTHS BETWEEN CERAMIC CORES AND VENEERING CERAMICS OF DENTAL BI-LAYERED CERAMIC SYSTEMS AND THE SENSITIVITY TO THERMOCYCLING

    Directory of Open Access Journals (Sweden)

    SUN TING, BDS, DDS

    2012-09-01

    Full Text Available The purpose of this study was to investigate the bond strength between various commercial ceramic core materials and veneering ceramics of dental bi-layered ceramic combinations and the effect of thermocycling. The shear bond strength of four dental bi-layered ceramic combinations (white Cercon, yellow Cercon, white Lava, yellow Lava, IPS E.max were tested. Metal ceramic combinations were conducted as a control group. Half of each group was subjected to thermocycling. All specimens were thereafter subjected to a shear force. The initial mean shear bond strength values in MPa ± S.D were 28.02 ± 3.04 for White Cercon Base/Cercon Ceram Kiss, 27.54 ± 2.20 for Yellow Cercon Base/Cercon Ceram Kiss, 28.43 ± 2.13for White Lava Frame/Lava Ceram, 27.36 ± 2.25 for Yellow Lava Frame/Lava Ceram, 47.10 ± 3.77 for IPS E.max Press/IPS E.max Ceram and 30.11 ± 2.15 for metal ceramic control. The highest shear strength was recorded for IPS E.max Press/IPS E.max Ceram before and after thermocycling. The mean shear bond strength values of five other combinations were not significantly different (P < 0.05. Lithium-disilicate based combinations produced the highest core-veneer bonds that overwhelmed the metal ceramic combinations. Thermocycling had no effect on the core-veneer bonds. The core-veneer bonds of zirconia based combinations were not weakened by the addition of coloring pigments.

  19. Tunable multiband ferroelectric devices for reconfigurable RF-frontends

    CERN Document Server

    Zheng, Yuliang

    2013-01-01

    Reconfigurable RF-frontends aim to cope with the continuous pursuit of wider frequency coverage, higher efficiency, further compactness and lower cost of ownership. They are expected to lay the foundations of future software defined or cognitive radios. As a potential enabling technology for the frontends, the tunable ferroelectric devices have shown not only enhanced performance but also new functionalities. This book explores the recent developments in the field. It provides a cross-sectional perspective on the interdisciplinary research. With attention to the devices based on ceramic thick-films and crystal thin-films, the book reviews the adapted technologies of material synthesis, film deposition and multilayer circuitry. Next, it highlights the original classes of thin-film ferroelectric devices, including stratified metal-insulator-metal varactors with suppression of acoustic resonance and programmable bi-stable high frequency capacitors. At the end the book analyzes how the frontends can be reformed b...

  20. An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Moghadam, Reza M. [Department; Xiao, Zhiyong [Department; Ahmadi-Majlan, Kamyar [Department; Grimley, Everett D. [Department; Bowden, Mark [Environmental; amp, Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ong, Phuong-Vu [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Chambers, Scott A. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Lebeau, James M. [Department; Hong, Xia [Department; Sushko, Peter V. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ngai, Joseph H. [Department

    2017-09-13

    The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

  1. Ferroelectric capacitor with reduced imprint

    Science.gov (United States)

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  2. Elastic recoil detection analysis of ferroelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Stannard, W.B.; Johnston, P.N.; Walker, S.R.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Scott, J.F. [New South Wales Univ., Kensington, NSW (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1996-12-31

    There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the determination of separate energy spectra for individual elements or for small groups of elements In this work ERDA employing 77 MeV {sup 127}I ions has been used to analyse Strontium Bismuth Tantalate thin films at the heavy ion recoil facility at ANSTO, Lucas Heights. 9 refs., 5 figs.

  3. Ferroelectric substrate effects on the magnetism, magnetotransport, and electroresistance of La0.7Ca0.3MnO3 thin films on BaTiO3

    OpenAIRE

    Alberca, A.; Munuera, C.; Tornos, J.; Mompean, F. J.; Biskup, N.; Ruiz, Amalia; Nemes, N. M.; Andrés, Alicia de; León, Carlos; Santamaría, Jacobo; García-Hernández, M.

    2012-01-01

    La 0.7Ca 0.3MnO 3 optimally doped epitaxial films were grown on ferroelectric BaTiO 3 substrates. Electronic transport (magnetoresistance and electroresistance) and magnetic properties showed important anomalies in the temperature interval between 60 and 150 K, below the metal-insulator transition. Scanning probe microscopy revealed changes in BaTiO 3 surface morphology at those temperatures. La 0.7Ca 0.3MnO 3 thickness is a critical factor: 120-thick films showed large anomalies sensitive to...

  4. Process optimization of high aspect ratio sub-32nm HSQ/AR3 bi-layer resist pillar

    Science.gov (United States)

    Chen, Wei-Su; Tsai, Ming-Jinn

    2011-04-01

    RRAM is the candidate of next generation new non-volatile memory. The etched stacking film thickness of RRAM cell pillar is not easy to reduce below 50 nm during CD scaling down since part of RRAM cell pillar height is removed during CMP polishing of dielectric passivation to expose the pillar top surface for the following metallization process. Therefore resist pillar pattern with high aspect ratio (AR) is needed to act as etch mask for defining thick RRAM cell pillar structure. Bilayer resist (BLR) process is most suitable for forming high AR pattern. Dry develop process is the key step for generating sub-32 nm high AR BLR pillar pattern. In this study optimization of dry develop process is investigated for high AR pillar with hydrogen silsesquioxane (HSQ) as upper thin imaging layer for e-beam exposure and AR3-600 as the thick underlayer for etching resistant. Experimental results are summarized below. Highest AR of ~6 for HSQ/AR3 BLR semi-dense L/S=1/2 pillar with vertical profile is obtained under optimized dry develop condition with O2, N2, Ar flow rates, chamber pressure, top and bottom power of 8, 5, 0 sccm, 1 mTorr, 200 and 100 watts respectively. AR is lower for looser pattern density. CD variation between HSQ/AR3-600 BLR pillars with different pattern density is optimized to 5.6 nm. The pillar profile is vertical in vacuum for pattern of any density but distorts more severe for denser pattern during ventilation to atmosphere. The most critical process parameters for obtaining high aspect ratio BLR pillar are O2 flow rate and top power. Sidewall profile angle of pillar is mainly dependent on chamber pressure and bottom power.

  5. Domain Selectivity in BiFeO3 Thin Films by Modified Substrate Termination

    NARCIS (Netherlands)

    Solmaz, Alim; Huijben, Mark; Koster, Gertjan; Egoavil, Ricardo; Gauquelin, Nicolas; Van Tendeloo, Gustaaf; Verbeeck, Jo; Noheda, Beatriz; Rijnders, Guus

    2016-01-01

    Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial

  6. A review of a bi-layered living cell treatment (Apligraf® in the treatment of venous leg ulcers and diabetic foot ulcers

    Directory of Open Access Journals (Sweden)

    Larissa Zaulyanov

    2007-04-01

    Full Text Available Larissa Zaulyanov, Robert S Kirsner Department of Dermatology and Cutaneous Surgery; University of Miami Miller School of Medicine, Miami, Florida, USAAbstract: Apligraf® (Organogenesis, Canton, MA is a bi-layered bioengineered skin substitute and was the first engineered skin US Food and Drug Administration (FDA-approved to promote the healing of ulcers that have failed standard wound care. Constructed by culturing human foreskin-derived neonatal fibroblasts in a bovine type I collagen matrix over which human foreskin-derived neonatal epidermal keratinocytes are then cultured and allowed to stratify, Apligraf provides both cells and matrix for the nonhealing wound. Its exact mechanism of action is not known, but it is known to produce cytokines and growth factors similar to healthy human skin. Initially approved by the FDA in 1998 for the treatment of venous ulcers greater than one-month duration that have not adequately responded to conventional therapy, Apligraf later received approval in 2000 for treatment of diabetic foot ulcers of greater than three weeks duration. Herein, we review the use of Apligraf in the treatment of chronic venous leg ulcers and diabetic foot ulcers. Our goal is to provide a working understanding of appropriate patient selection and proper use of the product for any physician treating this segment of the aging population.Keywords: wound healing, Apligraf®, venous leg ulcer, diabetic foot ulcer

  7. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C., E-mail: jconde@uvigo.e [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas y Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Gontad, F.; Chiussi, S. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Fornarini, L. [Enea-Frascati, Via Enrico Fermi 45, I-00044 Frascati (Roma) (Italy); Leon, B. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain)

    2010-02-26

    A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

  8. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    International Nuclear Information System (INIS)

    Conde, J.C.; Martin, E.; Gontad, F.; Chiussi, S.; Fornarini, L.; Leon, B.

    2010-01-01

    A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

  9. The Narrowest Band Gap Ever Observed in Molecular Ferroelectrics: Hexane-1,6-diammonium Pentaiodobismuth(III).

    Science.gov (United States)

    Zhang, Han-Yue; Wei, Zhenhong; Li, Peng-Fei; Tang, Yuan-Yuan; Liao, Wei-Qiang; Ye, Heng-Yun; Cai, Hu; Xiong, Ren-Gen

    2018-01-08

    Narrow band gaps and excellent ferroelectricity are intrinsically paradoxical in ferroelectrics as the leakage current caused by an increase in the number of thermally excited carriers will lead to a deterioration of ferroelectricity. A new molecular ferroelectric, hexane-1,6-diammonium pentaiodobismuth (HDA-BiI 5 ), was now developed through band gap engineering of organic-inorganic hybrid materials. It features an intrinsic band gap of 1.89 eV, and thus represents the first molecular ferroelectric with a band gap of less than 2.0 eV. Simultaneously, low-temperature solution processing was successfully applied to fabricate high-quality ferroelectric thin films based on HDA-BiI 5 , for which high-precision controllable domain flips were realized. Owing to its narrow band gap and excellent ferroelectricity, HDA-BiI 5 can be considered as a milestone in the exploitation of molecular ferroelectrics, with promising applications in high-density data storage and photovoltaic conversion. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Synthesis of ferroelectric nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Roervik, Per Martin

    2008-12-15

    The increasing miniaturization of electric and mechanical components makes the synthesis and assembly of nanoscale structures an important step in modern technology. Functional materials, such as the ferroelectric perovskites, are vital to the integration and utility value of nanotechnology in the future. In the present work, chemical methods to synthesize one-dimensional (1D) nanostructures of ferroelectric perovskites have been studied. To successfully and controllably make 1D nanostructures by chemical methods it is very important to understand the growth mechanism of these nanostructures, in order to design the structures for use in various applications. For the integration of 1D nanostructures into devices it is also very important to be able to make arrays and large-area designed structures from the building blocks that single nanostructures constitute. As functional materials, it is of course also vital to study the properties of the nanostructures. The characterization of properties of single nanostructures is challenging, but essential to the use of such structures. The aim of this work has been to synthesize high quality single-crystalline 1D nanostructures of ferroelectric perovskites with emphasis on PbTiO3 , to make arrays or hierarchical nanostructures of 1D nanostructures on substrates, to understand the growth mechanisms of the 1D nanostructures, and to investigate the ferroelectric and piezoelectric properties of the 1D nanostructures. In Paper I, a molten salt synthesis route, previously reported to yield BaTiO3 , PbTiO3 and Na2Ti6O13 nanorods, was re-examined in order to elucidate the role of volatile chlorides. A precursor mixture containing barium (or lead) and titanium was annealed in the presence of NaCl at 760 degrees Celsius or 820 degrees Celsius. The main products were respectively isometric nanocrystalline BaTiO3 and PbTiO3. Nanorods were also detected, but electron diffraction revealed that the composition of the nanorods was

  11. Observation of ferroelectricity at room temperature in 1 nm thick conducting BaTiO3'δ

    Science.gov (United States)

    Lee, Seungran; Baasanforj, Lkhagvasuren; Chang, Jungwon; Hwang, Inwoong; Kim, Jungrae; Shim, Seungbo; Song, Jonghyun; Kim, Jinhee

    Requirements of multi-functionalities in thin-film systems have led important findings of unique physical character and degree of freedom which only exist in film forms. As growth technique gets advanced, one can decrease the film thickness even nm scale where its unique physical character still appears. Among those intriguing film systems, ferroelectric has been of interest. As a prototype ferroelectric, electrical properties of ultra-thin BaTiO3 (BTO) films have extensively studied, which is found that ferroelectricity sustains down to nm-thick films as theoretically predicted. However, efforts on determination of the minimum thickness in ferroelectric films was hindered by large leakage current. In this study, we used nm-thick BTO films showing metallic-like behaviour around room temperature (RT). Surprisingly, even the 2 unit-cells-thick metallic-like BTO film shows ferroelectric switching behaviour at RT! Observation of such ultra-thin conducting ferroelectric will enlarge its applicable fields leading realization of new functional devices and investigations of further physical phenomena.

  12. Mechanical writing of ferroelectric polarization.

    Science.gov (United States)

    Lu, H; Bark, C-W; Esque de los Ojos, D; Alcala, J; Eom, C B; Catalan, G; Gruverman, A

    2012-04-06

    Ferroelectric materials are characterized by a permanent electric dipole that can be reversed through the application of an external voltage, but a strong intrinsic coupling between polarization and deformation also causes all ferroelectrics to be piezoelectric, leading to applications in sensors and high-displacement actuators. A less explored property is flexoelectricity, the coupling between polarization and a strain gradient. We demonstrate that the stress gradient generated by the tip of an atomic force microscope can mechanically switch the polarization in the nanoscale volume of a ferroelectric film. Pure mechanical force can therefore be used as a dynamic tool for polarization control and may enable applications in which memory bits are written mechanically and read electrically.

  13. Ferroelectrics as Smart Mechanical Materials.

    Science.gov (United States)

    Cordero-Edwards, Kumara; Domingo, Neus; Abdollahi, Amir; Sort, Jordi; Catalan, Gustau

    2017-10-01

    The mechanical properties of materials are insensitive to space inversion, even when they are crystallographically asymmetric. In practice, this means that turning a piezoelectric crystal upside down or switching the polarization of a ferroelectric should not change its mechanical response. Strain gradients, however, introduce an additional source of asymmetry that has mechanical consequences. Using nanoindentation and contact-resonance force microscopy, this study demonstrates that the mechanical response to indentation of a uniaxial ferroelectric (LiNbO 3 ) does change when its polarity is switched, and use this mechanical asymmetry both to quantify its flexoelectricity and to mechanically read the sign of its ferroelectric domains. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Mechanical Writing of Ferroelectric Polarization

    Science.gov (United States)

    Lu, H.; Bark, C.-W.; Esque de los Ojos, D.; Alcala, J.; Eom, C. B.; Catalan, G.; Gruverman, A.

    2012-04-01

    Ferroelectric materials are characterized by a permanent electric dipole that can be reversed through the application of an external voltage, but a strong intrinsic coupling between polarization and deformation also causes all ferroelectrics to be piezoelectric, leading to applications in sensors and high-displacement actuators. A less explored property is flexoelectricity, the coupling between polarization and a strain gradient. We demonstrate that the stress gradient generated by the tip of an atomic force microscope can mechanically switch the polarization in the nanoscale volume of a ferroelectric film. Pure mechanical force can therefore be used as a dynamic tool for polarization control and may enable applications in which memory bits are written mechanically and read electrically.

  15. A gastro-resistant ovalbumin bi-layered mini-tablet-in-tablet system for the delivery of Lactobacillus acidophilus probiotic to simulated human intestinal and colon conditions.

    Science.gov (United States)

    Govender, Mershen; Choonara, Yahya Essop; van Vuuren, Sandy; Kumar, Pradeep; du Toit, Lisa Claire; Pillay, Viness

    2015-07-01

    The viability of probiotic bacteria during formulation processes and delivery is vital to ensure health benefits. This study focuses on the use of gastro-resistant denatured ovalbumin for the targeted delivery of probiotic Lactobacillus acidophilus to simulated human intestinal and colon conditions through a bi-layered mini-tablet-in-tablet system (BMTTS). The BMTTS consists of two gastro-resistant ovalbumin mini-tablets containing L. acidophilus suspended in lactose and eudragit S100 for targeted intestinal and colonic delivery respectively. Luminescence has been utilized to ensure probiotic viability during formulation processes in addition to determining all probiotic release profiles. The mechanism of probiotic release from the ovalbumin matrix was ascertained using mathematical modelling and molecular docking studies. Magnetic resonance imaging and differential scanning calorimetry are also included as part of the in-vitro characterization of the ovalbumin system. The BMTTS was effective in the delivery of L. acidophilus to simulated human intestinal and colon conditions. Formulation processes were furthermore determined to maintain probiotic viability. Statistical analysis of the release data noted a significant effect of pH denaturation on the release properties of ovalbumin. Magnetic resonance imaging results have indicated a decrease in ovalbumin matrix size upon exposure to simulated intestinal fluid. Molecular docking studies carried out depicted the interaction and binding positions inherent to the ovalbumin-pancreatic trypsin interaction complex indicating the possible enzymatic degradation of ovalbumin leading to the release of the probiotic from the protein matrix. The BMTTS has been determined to be effective in the protection and delivery of probiotic L. acidophilus to simulated human intestinal and colonic conditions. Molecular docking analysis has noted that pancreatin exerts a significant effect on probiotic release from the gastro

  16. Electric double layer transistors with ferroelectric BaTiO3 channels

    NARCIS (Netherlands)

    Ito, M.; Matsubara, Y.; Kozuka, Y.; Takahashi, K. S.; Kagawa, F.; Ye, J. T.; Iwasa, Y.; Ueno, K.; Tokura, Y.; Kawasaki, M.

    2014-01-01

    We report the surface conduction of a BaTiO3 thin film using electric double layer transistor (EDLT) structure. A transistor operation was observed at 220 K with an on/off ratio exceeding 10(5), demonstrating that ionic liquid gating is effective to induce carriers at the surface of ferroelectric

  17. Local Weak Ferromagnetism in Single-Crystalline Ferroelectric BiFeO3

    DEFF Research Database (Denmark)

    Ramazanoglu, M.; Laver, Mark; Ratcliff, W.

    2011-01-01

    regions of dimension 0.03 microns along [11̅ 0], to several microns along [111], confirming a long-standing theoretical prediction. The average local magnetization is 0.06  μB/Fe. Our results provide an indication of the intrinsic macroscopic magnetization to be expected in ferroelectric BiFeO3 thin films...

  18. Dual strain mechanisms in a lead-free morphotropic phase boundary ferroelectric

    DEFF Research Database (Denmark)

    Walker, Julian; Simons, Hugh; Alikin, Denis O

    2016-01-01

    )-based ferroelectric ceramics. In the search for Pb-free alternatives, systems with MPBs between polar and non-polar phases have recently been theorized as having great promise. While such an MPB was identified in rare-earth (RE) modified bismuth ferrite (BFO) thin films, synthesis challenges have prevented its...

  19. Crossbar arrays of nonvolatile, rewritable polymer ferroelectric diode memories on plastic substrates

    NARCIS (Netherlands)

    Breemen, A.J.J.M. van; Steen, J.L. van der; Heck, G. van; Wang, R.; Khiklovskyi, V.; Kemerink, M.; Gelinck, G.H.

    2014-01-01

    In this paper, we demonstrate a scalable and low-cost memory technology using a phase separated blend of a ferroelectric polymer and a semiconducting polymer as data storage medium on thin, flexible polyester foils of only 25μm thickness. By sandwiching this polymer blend film between rows and

  20. Investigation of ferroelectric materials by the thermal noise method: advantages and limitations

    Czech Academy of Sciences Publication Activity Database

    Bednyakov, Petr; Shnaidshtein, I. V.; Strukov, B. A.

    2016-01-01

    Roč. 500, č. 1 (2016), 203-217 ISSN 0015-0193 R&D Projects: GA ČR GA13-15110S Institutional support: RVO:68378271 Keywords : thermal noise * ferroelectricity * thin films * dielectric permittivity * equivalent circuit Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.551, year: 2016

  1. Ferroelectric Fluid Flow Control Valve

    Science.gov (United States)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    An active valve is controlled and driven by external electrical actuation of a ferroelectric actuator to provide for improved passage of the fluid during certain time periods and to provide positive closure of the valve during other time periods. The valve provides improved passage in the direction of flow and positive closure in the direction against the flow. The actuator is a dome shaped internally prestressed ferroelectric actuator having a curvature, said dome shaped actuator having a rim and an apex. and a dome height measured from a plane through said rim said apex that varies with an electric voltage applied between an inside and an outside surface of said dome shaped actuator.

  2. Graded ferroelectrics, transpacitors and transponents

    CERN Document Server

    Mantese, Joseph V

    2005-01-01

    The text details the experimental and theoretical aspects of newly emerging ferroelectric devices, and their extensions to other ferroic systems such as: ferromagnetics, ferroelastics, piezoelectrics, etc. The theory and experimental results pertaining to non-homogeneous active ferroic devices and structures are presented.

  3. Surface Acoustic Waves in ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Tarasenko A., Nataliya; Jastrabík, Lubomír; Tarasenko, Alexander

    2004-01-01

    Roč. 298, - (2004), s. 325-333 ISSN 0015-0193 R&D Projects: GA AV ČR IBS1010203 Keywords : Rayleigh waves * ferroelectric films * phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.517, year: 2004

  4. Nonvolatile data storage using mechanical force-induced polarization switching in ferroelectric polymer

    International Nuclear Information System (INIS)

    Chen, Xin; Tang, Xin; Chen, Xiang-Zhong; Chen, Yu-Lei; Shen, Qun-Dong; Guo, Xu; Ge, Hai-Xiong

    2015-01-01

    Ferroelectric polymers offer the promise of low-cost and flexible electronic products. They are attractive for information storage due to their spontaneous polarization which is usually switched by electric field. Here, we demonstrate that electrical signals can be readily written on ultra-thin ferroelectric polymer films by strain gradient-induced polarization switching (flexoelectric effect). A force with magnitude as small as 64nN is enough to induce highly localized (40 nm feature size) change in the polarization states. The methodology is capable of realizing nonvolatile memory devices with miniaturized cell size and storage density of tens to hundreds Gbit per square inch

  5. Photovoltaic properties of low band gap ferroelectric perovskite oxides

    Science.gov (United States)

    Huang, Xin; Paudel, Tula; Dong, Shuai; Tsymbal, Evgeny

    2015-03-01

    Low band gap ferroelectric perovskite oxides are promising for photovoltaic applications due to their high absorption in the visible optical spectrum and a possibility of having large open circuit voltage. Additionally, an intrinsic electric field present in these materials provides a bias for electron-hole separation without requiring p-n junctions as in conventional solar cells. High quality thin films of these compounds can be grown with atomic layer precision allowing control over surface and defect properties. Initial screening based on the electronic band gap and the energy dependent absorption coefficient calculated within density functional theory shows that hexagonal rare-earth manganites and ferrites are promising as photovoltaic absorbers. As a model, we consider hexagonal TbMnO3. This compound has almost ideal band gap of about 1.4 eV, very high ferroelectric Curie temperature, and can be grown epitaxially. Additionally hexagonal TbMnO3 offers possibility of coherent structure with transparent conductor ZnO. We find that the absorption is sufficiently high and dominated by interband transitions between the Mn d-bands. We will present the theoretically calculated photovoltaic efficiency of hexagonal TbMnO3 and explore other ferroelectric perovskite oxides.

  6. Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

    Science.gov (United States)

    Vasudevan, R. K.; Bogle, K. A.; Kumar, A.; Jesse, S.; Magaraggia, R.; Stamps, R.; Ogale, S. B.; Potdar, H. S.; Nagarajan, V.

    2011-12-01

    Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1-xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of ˜1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

  7. Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, Rama K [ORNL; Bogle, K A [University of New South Wales, Sydney, Australia; Kumar, Amit [ORNL; Jesse, Stephen [ORNL; Magaraggia, R [University of Glasgow; Stamps, R [University of Glasgow; Ogale, S [National Chemical Laboratory, India; Potdar, H S [National Chemical Laboratory, India

    2011-01-01

    Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of 1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

  8. Nanoscale ferroelectrics and multiferroics key processes and characterization issues, and nanoscale effects

    CERN Document Server

    Alguero, Miguel

    2016-01-01

    This book reviews the key issues in processing and characterization of nanoscale ferroelectrics and multiferroics, and provides a comprehensive description of their properties, with an emphasis in differentiating size effects of extrinsic ones like boundary or interface effects. Recently described nanoscale novel phenomena are also addressed. Organized into three parts it addresses key issues in processing (nanostructuring), characterization (of the nanostructured materials) and nanoscale effects. Taking full advantage of the synergies between nanoscale ferroelectrics and multiferroics, it covers materials nanostructured at all levels, from ceramic technologies like ferroelectric nanopowders, bulk nanostructured ceramics and thick films, and magnetoelectric nanocomposites, to thin films, either polycrystalline layer heterostructures or epitaxial systems, and to nanoscale free standing objects with specific geometries, such as nanowires and tubes at different levels of development. The book is developed from t...

  9. Percolation Magnetism in Ferroelectric Nanoparticles

    Science.gov (United States)

    Golovina, Iryna S.; Lemishko, Serhii V.; Morozovska, Anna N.

    2017-06-01

    Nanoparticles of potassium tantalate (KTaO3) and potassium niobate (KNbO3) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  10. Percolation Magnetism in Ferroelectric Nanoparticles.

    Science.gov (United States)

    Golovina, Iryna S; Lemishko, Serhii V; Morozovska, Anna N

    2017-12-01

    Nanoparticles of potassium tantalate (KTaO 3 ) and potassium niobate (KNbO 3 ) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe 3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  11. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  12. Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

    Science.gov (United States)

    Zhao, Dong; Katsouras, Ilias; Asadi, Kamal; Groen, Wilhelm A.; Blom, Paul W. M.; de Leeuw, Dago M.

    2016-06-01

    A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of intermediate polarization states, formed upon incomplete, or partial, switching, we have systematically studied their retention in capacitors comprising two classic ferroelectric materials, viz. random copolymer of vinylidene fluoride with trifluoroethylene, P(VDF-TrFE), and Pb(Zr,Ti)O3. Each experiment started from a discharged and electrically depolarized ferroelectric capacitor. Voltage pulses were applied to set the given polarization states. The retention was measured as a function of time at various temperatures. The intermediate polarization states are stable over time, up to the Curie temperature. We argue that the remarkable stability originates from the coexistence of effectively independent domains, with different values of polarization and coercive field. A domain growth model is derived quantitatively describing deterministic switching between the intermediate polarization states. We show that by using well-defined voltage pulses, the polarization can be set to any arbitrary value, allowing arithmetic programming. The feasibility of arithmetic programming along with the inherent stability of intermediate polarization states makes ferroelectric materials ideal candidates for multibit data storage.

  13. Enhancement of ferroelectricity in nanocones

    Czech Academy of Sciences Publication Activity Database

    Bykov, Pavlo; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

    2009-01-01

    Roč. 246, č. 10 (2009), s. 2396-2396 ISSN 0370-1972 R&D Projects: GA AV ČR KAN301370701; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : ferroelectric size effect of cone-shaped nanoparticles * phase transition temperature dependence on nanocone volume Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.150, year: 2009

  14. Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode

    NARCIS (Netherlands)

    Kaleli, B.; Nguyen, Duc Minh; Schmitz, Jurriaan; Wolters, Robertus A.M.; Hueting, Raymond Josephus Engelbart

    2014-01-01

    We realized metal-ferroelectric-metal (MFM) capacitors comprising high-quality ferroelectric lead zirconate titanate (Pb(Zr0.52Ti0.48)O3 or PZT) thin films on an LaNiO3/poly-Si/titanium nitride (TiN)/SiO2 integrated on a 100 mm Si wafer. Promising effective piezoelectric coefficient and remnant

  15. Polymer Ferroelectric Memory for Flexible Electronics

    KAUST Repository

    Khan, Mohd Adnan

    2013-11-01

    With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

  16. Negative Thermal Expansion and Ferroelectric Oxides in Electronic Device Composites

    Science.gov (United States)

    Trujillo, Joy Elizabeth

    Electronic devices increasingly pervade our daily lives, driving the need to develop components which have material properties that can be designed to target a specific need. The principle motive of this thesis is to investigate the effects of particle size and composition on three oxides which possess electronic and thermal properties essential to designing improved ceramic composites for more efficient, high energy storage devices. A metal matrix composite project used the negative thermal expansion oxide, ZrW2O 8, to offset the high thermal expansion of the metal matrix without sacrificing high thermal conductivity. Composite preparation employed a powder mixing technique to achieve easy composition control and homogenous phase distribution in order to build composites which target a specific coefficient of thermal expansion (CTE). A tailorable CTE material is desirable for overcoming thermomechanical failure in heat sinks or device casings. This thesis also considers the particle size effect on dielectric properties in a common ferroelectric perovskite, Ba1-xSrxTiO 3. By varying the Ba:Sr ratio, the Curie temperature can be adjusted and by reducing the particle size, the dielectric constant can be increased and hysteresis decreased. These conditions could yield anonymously large dielectric constants near room temperature. However, the ferroelectric behavior has been observed to cease below a minimum size of a few tens of nanometers in bulk or thin film materials. Using a new particle slurry approach, electrochemical impedance spectroscopy allows dielectric properties to be determined for nanoparticles, as opposed to conventional methods which measure only bulk or thin film dielectric properties. In this manner, Ba1-xSrxTiO3 was investigated in a new size regime, extending the theory on the ferroelectric behavior to film heterostructures of STO/YSZ are used in electrochemical energy devices due to their enhanced interfacial ionic conductivity. This work

  17. Novel Photovoltaic Devices Using Ferroelectric Material and Colloidal Quantum Dots

    Science.gov (United States)

    Paik, Young Hun

    the two materials, this dissertation focused on material synthesis for low cost solution process for both materials, fabrication of various device structures and electrical/optical characterization to understand the underlying physics. We successfully demonstrated lead sulfide quantum dots (PbS QDs) and lead zirconate titanate nanoparticles (PZT NPs) in an aqueous solution and fabricated a photosensitive device. Solution based low-temperature process was used to fabricate a PbS QD and a PZT NP device. We exhibited a superior photoresponse and ferroelectric photovoltaic properties with the novel PZT NP device and studied the physics on domain wall effect and internal polarity effect. PZT NP was mainly investigated because PZT NP device is the first report as a photosensitive device with a successful property demonstration, as we know of. PZT's crystalline structure and the size of the nanocrystals were studied using X-ray diffraction and TEM (Transmission electron microscopy) respectively. We observed < 100 nm of PZT NPs and this result matched with DLS (dynamic light scattering) measurement. We fabricated ferroelectric devices using the PZT NPs for the various optical and electrical characterizations and verified ferroelectric properties including ferroelectric hysteresis loop. We also observed a typical ferroelectric photovoltaic effect from a PZT NP based device which was fabricated on an ITO substrate. We synthesized colloidal quantum dots (CQD) with the inexpensive soluble process. Fabricated PbS QD was used for the hybrid device with PZT thin films. J-V measured and the result shows superior open circuit voltage characteristics compared to conventional PbS QD PV devices, and resulting the improvement of the solar cell efficiency. This Ferroelectrics and Quantum Dots (FE-QDs) device also the first trial and the success as we know of.

  18. Effect of (Cd:Zn)S Particle Concentration and Photoexcitation on the Electrical and Ferroelectric Properties of (Cd:Zn)S/P(VDF-TrFE) Composite Films

    OpenAIRE

    Sebastian Engel; David Smykalla; Bernd Ploss; Stephan Gräf; Frank A. Müller

    2017-01-01

    The influence of semiconductor particle concentration and photoexcitation on the electrical and ferroelectric properties of ferroelectric-semiconductor-composites was investigated. For this purpose, 32 µm thin films of poly(vinylidene fluoride-co-trifluoroethylene) with (Cd:Zn)S particle concentrations of between 0 and 20 vol % were fabricated and characterized by scanning electron microscopy, Fourier transformed infrared spectroscopy, X-ray diffraction, and optical spectroscopy. It was shown...

  19. Multilevel information storage in ferroelectric polymer memories

    NARCIS (Netherlands)

    Tripathi, A.K.; Breemen, A.J.J.M. van; Shen, J.; Gao, Q.; Ivan, M.G.; Reimann, K.; Meinders, E.R.; Gelinck, G.H.

    2011-01-01

    Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors

  20. Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming, and relaxation

    Science.gov (United States)

    Scott, J. F.; Hershkovitz, A.; Ivry, Y.; Lu, H.; Gruverman, A.; Gregg, J. M.

    2017-12-01

    Recent experimental work shows that ferroelectric switching can occur in large jumps in which ferroelastic superdomains switch together, rather than having the numerous smaller ferroelectric domains switch within them. In this sense, the superdomains play a role analogous to that of Abrikosov vortices in thin superconducting films under the Kosterlitz-Thouless framework, which control the dynamics more than individual Cooper pairs within them do. Here, we examine the dynamics of ferroelastic superdomains in ferroelastic ferroelectrics and their role in switching devices such as memories. Jamming of ferroelectric domains in thin films has revealed an unexpected time dependence of t-1/4 at long times (hours), but it is difficult to discriminate between power-law and exponential relaxation. Other aspects of this work, including spatial period doubling of domains, led to a description of ferroelastic domains as nonlinear processes in a viscoelastic medium, which produce folding and metastable kinetically limited states. This ¼ exponent is a surprising agreement with the well-known value of ¼ for coarsening dynamics in viscoelastic media. We try to establish a link between these two processes, hitherto considered unrelated, and with superdomains and domain bundles. We note also that high-Tc superconductors share many of the ferroelastic domain properties discussed here and that several new solar cell materials and metal-insulator transition systems are ferroelastic.

  1. Local symmetry approach to relaxor ferroelectrics

    Science.gov (United States)

    Nahas, Y.; Kornev, I.

    2013-08-01

    We propose a theoretical framework based on local gauge symmetries and develop a first-principles-derived effective Hamiltonian to study relaxor ferroelectrics. The approach is applied to PLZT relaxor and i) qualitatively reproduces many of its generic features, such as all the characteristic temperatures inherent to relaxor ferroelectrics and their dependence on the La concentration, ii) yields a rich variety of ferroelectric phases, depending on La content, iii) reveals the existence of non-perfectly ordered regions even in the ferroelectric state, iv) allows, for the first time, to compute the critical exponent γ in a relaxor ferroelectric, and v) clearly elucidates how the relaxor behavior, such as a diffusive phase transition, arises due to the disorder-induced non-trivial interplay between local and global scales.

  2. Ferroelectric Electron Emission Principles and Technology

    CERN Document Server

    Riege, H

    1997-01-01

    The spontaneous electrical polarization of ferroelectric materials can be changed either by reversal or by phase transition from a ferroelectric into a non-ferroelectric state or vice versa. If spontaneous polarization changes are induced with fast heat, mechanical pressure, laser or electric field pulses on a submicrosecond time scale, strong uncompensated surface charge densities and related polarization fields are generated, which may lead to the intense self-emission of electrons from the negatively charged free surface areas of the ferroelectric sample. Hence, electron guns can be built with extraction-field-free ferroelectric cathodes, which may be easily separated from the high-field regions of post-accelerating gap structures. The intensity, the energy, the temporal and spatial distribution, and the repetitition rate of the emitted electron beams can be controlled within wide limits via the excitation pulses and external focusing and accelerating electromagnetic fields. The technological advantages an...

  3. Features and Technology of Ferroelectric Electron Emission

    CERN Document Server

    Boscolo, I; Herleb, U; Riege, H

    1998-01-01

    Spontaneous electrical polarization of ferroelectric materials can be changed either by reversal or by phase transition from a ferroelectric into a non-polar state or vice versa. If spontaneous polarization changes are induced at a submicrosecond time-scale, strong uncompensated surface charge densities and related fields are generated, which may lead to the intense self-emission of electrons from the negatively-charged free surface areas of the ferroelectric cathode. The nature of this self-emission differs essentially from other methods of ferroelectric electron emission and from conventional electron emission in that the latter methods are only achieved by extracting electrons with externally applied electric fields. When electron guns are constructed with ferroelectric cathodes, new design criteria have to be taken into account. The intensity, the energy, the temporal and spatial distribution and the repetition rate of the emitted electron beams can be adjusted within wide limits. The advantages of ferroe...

  4. Negative capacitance in multidomain ferroelectric superlattices.

    Science.gov (United States)

    Zubko, Pavlo; Wojdeł, Jacek C; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-23

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  5. Interband transitions in epitaxial ferroelectric films of NaNbO.sub.3./sub

    Czech Academy of Sciences Publication Activity Database

    Tyunina, Marina; Chvostová, Dagmar; Yao, L.D.; Dejneka, Alexandr; Kocourek, Tomáš; Jelínek, Miroslav; van Dijken, S.

    2015-01-01

    Roč. 92, č. 10 (2015), "104101-1"-"104101-6" ISSN 1098-0121 R&D Projects: GA ČR GA15-13778S; GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : oxygen-octahedra ferroelectrics * optical-properties * thin-films * evolution Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  6. Strain Engineering of Ferroelectric Domains in KxNa1−xNbO3 Epitaxial Layers

    Directory of Open Access Journals (Sweden)

    Jutta Schwarzkopf

    2017-08-01

    Full Text Available The application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural properties of ferroelectric domains and their corresponding piezoelectric behavior. The formation of different ferroelectric phases can be understood by a strain-phase diagram, which is calculated within the framework of the Landau–Ginzburg–Devonshire theory. In this paper, we illustrate the opportunity of ferroelectric domain engineering in the KxNa1−xNbO3 lead-free material system. In particular, the following examples are discussed in detail: (i Different substrates (NdGaO3, SrTiO3, DyScO3, TbScO3, and GdScO3 are used to systematically tune the incorporated epitaxial strain from compressive to tensile. This can be exploited to adjust the NaNbO3 thin film surface orientation and, concomitantly, the vector of electrical polarization, which rotates from mainly vertical to exclusive in-plane orientation. (ii In ferroelectric NaNbO3, thin films grown on rare-earth scandate substrates, highly regular stripe domain patterns are observed. By using different film thicknesses, these can be tailored with regard to domain periodicity and vertical polarization component. (iii A featured potassium concentration of x = 0.9 of KxNa1−xNbO3 thin films grown on (110 NdScO3 substrates favors the coexistence of two equivalent, monoclinic, but differently oriented ferroelectric phases. A complicated herringbone domain pattern is experimentally observed which consists of alternating MC and a1a2 domains. The coexistence of different types of ferroelectric domains leads to polarization discontinuities at the domain walls, potentially enabling high piezoelectric responses. In each of these examples, the experimental results are in excellent agreement with predictions based on the linear elasticity theory.

  7. Differential voltage amplification from ferroelectric negative capacitance

    Science.gov (United States)

    Khan, Asif I.; Hoffmann, Michael; Chatterjee, Korok; Lu, Zhongyuan; Xu, Ruijuan; Serrao, Claudy; Smith, Samuel; Martin, Lane W.; Hu, Chenming; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2017-12-01

    We demonstrate that a ferroelectric can cause a differential voltage amplification without needing an external energy source. As the ferroelectric switches from one polarization state to the other, a transfer of energy takes place from the ferroelectric to the dielectric, determined by the ratio of their capacitances, which, in turn, leads to the differential amplification. This amplification is very different in nature from conventional inductor-capacitor based circuits where an oscillatory amplification can be observed. The demonstration of differential voltage amplification from completely passive capacitor elements only has fundamental ramifications for next generation electronics.

  8. Static Characteristics of the Ferroelectric Transistor Inverter

    Science.gov (United States)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  9. Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

    Science.gov (United States)

    Tenne, D A; Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Katiyar, R S; Cantarero, A; Soukiassian, A; Vaithyanathan, V; Haeni, J H; Tian, W; Schlom, D G; Choi, K J; Kim, D M; Eom, C B; Sun, H P; Pan, X Q; Li, Y L; Chen, L Q; Jia, Q X; Nakhmanson, S M; Rabe, K M; Xi, X X

    2006-09-15

    We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

  10. Ferroelectric and piezoelectric properties of MOCVD Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}PbTiO{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Baumann, P. K.; Bai, G. R.; Streiffer, S. K.; Ghosh, K.; Auciello, O.; Stemmer, S.; Munkholm, A.; Thompson, C.; Kim, D.-J.; Maria, J.-P.; Kingon, A. I.

    2000-02-02

    The authors have grown epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} (PMN) and (1-x)(Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3})-x(PBTiO{sub 3})(PMN-PT)thin films by metalorganic chemical vapor deposition at 700 -- 780 C on (100) SrTiO{sub 3} and SrRuO{sub 3}/SrTiO{sub 3} substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30--0.35, polarization hysteresis with P{sub r}{approximately}18{mu}C/cm{sup 2} was obtained. Initial piezoresponse data are discussed.

  11. Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO3

    Energy Technology Data Exchange (ETDEWEB)

    Chen, F.; Zhu, Y.; Liu, S.; Qi, Y.; Hwang, H. Y.; Brandt, N. C.; Lu, J.; Quirin, F.; Enquist, H.; Zalden, P.; Hu, T.; Goodfellow, J.; Sher, M. -J.; Hoffmann, M. C.; Zhu, D.; Lemke, H.; Glownia, J.; Chollet, M.; Damodaran, A. R.; Park, J.; Cai, Z.; Jung, I. W.; Highland, M. J.; Walko, D. A.; Freeland, J. W.; Evans, P. G.; Vailionis, A.; Larsson, J.; Nelson, K. A.; Rappe, A. M.; Sokolowski-Tinten, K.; Martin, L. W.; Wen, H.; Lindenberg, A. M.

    2016-11-22

    The dynamical processes associated with electric field manipulation of the polarization in a ferroelectric remain largely unknown but fundamentally determine the speed and functionality of ferroelectric materials and devices. Here we apply subpicosecond duration, single-cycle terahertz pulses as an ultrafast electric field bias to prototypical BaTiO3 ferroelectric thin films with the atomic-scale response probed by femtosecond x-ray-scattering techniques. We show that electric fields applied perpendicular to the ferroelectric polarization drive large-amplitude displacements of the titanium atoms along the ferroelectric polarization axis, comparable to that of the built-in displacements associated with the intrinsic polarization and incoherent across unit cells. This effect is associated with a dynamic rotation of the ferroelectric polarization switching on and then off on picosecond time scales. These transient polarization modulations are followed by long-lived vibrational heating effects driven by resonant excitation of the ferroelectric soft mode, as reflected in changes in the c-axis tetragonality. The ultrafast structural characterization described here enables a direct comparison with first-principles-based molecular-dynamics simulations, with good agreement obtained.

  12. Four-state ferroelectric spin-valve

    Czech Academy of Sciences Publication Activity Database

    Quindeau, A.; Fina, I.; Martí, Xavier; Apachitei, G.; Ferrer, P.; Nicklin, C.; Pippel, E.; Hesse, D.; Alexe, M.

    2015-01-01

    Roč. 5, May (2015), 09749 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic and spintronic devices * ferroelectrics and multiferroics Subject RIV: BE - Theoretical Physics Impact factor: 5.228, year: 2015

  13. Ferroelectricity in the multiferroic hexagonal manganites

    OpenAIRE

    Lilienblum, Martin; Lottermoser, Thomas; Manz, Sebastian; Selbach, Sverre Magnus; Cano, Andres; Fiebig, Manfred

    2015-01-01

    Since their discovery in 1963 the hexagonal manganites have consolidated their role as exotic ferroelectrics with astonishing functionalities. Their introduction as room-temperature device ferroelectrics was followed by observations of giant flexoelectricity, multiferroicity with magnetoelectric domain and domain-wall coupling, protected vortex domain structures, topological domain-scaling behaviour and domain walls with tunable conductance and magnetism. Even after half a century, however, t...

  14. Ferroelectric Phase Diagram of PVDF:PMMA

    OpenAIRE

    Li, Mengyuan; Stingelin, Natalie; Michels, Jasper J.; Spijkman, Mark-Jan; Asadi, Kamal; Feldman, Kirill; Blom, Paul W. M.; de Leeuw, Dago M.

    2012-01-01

    We have investigated the ferroelectric phase diagram of poly(vinylidene fluoride) (PVDF) and poly(methyl methacrylate) (PMMA). The binary nonequilibrium temperature composition diagram was determined and melting of alpha- and beta-phase PVDF was identified. Ferroelectric beta-PVDF:PMMA blend films were made by melting, ice quenching, and subsequent annealing above the glass transition temperature of PMMA, close to the melting temperature of PVDF. Addition of PMMA suppresses the crystallizatio...

  15. Ferroelectric domain continuity over grain boundaries

    DEFF Research Database (Denmark)

    Mantri, Sukriti; Oddershede, Jette; Damjanovic, Dragan

    2017-01-01

    Formation and mobility of domain walls in ferroelectric materials is responsible for many of their electrical and mechanical properties. Domain wall continuity across grain boundaries has been observed since the 1950's and is speculated to affect the grain boundary-domain interactions, thereby...... techniques in manipulating the micro-structure and domain structure to result in desired interactions between neighbouring grains could prove to be beneficial for future polycrystalline ferroelectric materials....

  16. An epitaxial ferroelectric tunnel junction on silicon.

    Science.gov (United States)

    Li, Zhipeng; Guo, Xiao; Lu, Hui-Bin; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang

    2014-11-12

    Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field.

    Science.gov (United States)

    Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin-Seok; Yoon, Jong-Gul; Chen, Long-Qing; Yang, Sang Mo; Noh, Tae Won

    2018-03-12

    Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient 1 that enables mechanical manipulation of polarization without applying an electrical bias 2,3 . Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip 3,4 . However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO 3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

  18. A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

    KAUST Repository

    Park, Jihoon

    2015-01-01

    We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. © The Royal Society of Chemistry 2015.

  19. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-01-12

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

  20. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    International Nuclear Information System (INIS)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing

    2015-01-01

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force

  1. Nanoscale mechanical switching of ferroelectric polarization via flexoelectricity

    Science.gov (United States)

    Gu, Yijia; Hong, Zijian; Britson, Jason; Chen, Long-Qing

    2015-01-01

    Flexoelectric coefficient is a fourth-rank tensor arising from the coupling between strain gradient and electric polarization and thus exists in all crystals. It is generally ignored for macroscopic crystals due to its small magnitude. However, at the nanoscale, flexoelectric contributions may become significant and can potentially be utilized for device applications. Using the phase-field method, we study the mechanical switching of electric polarization in ferroelectric thin films by a strain gradient created via an atomic force microscope tip. Our simulation results show good agreement with existing experimental observations. We examine the competition between the piezoelectric and flexoelectric effects and provide an understanding of the role of flexoelectricity in the polarization switching. Also, by changing the pressure and film thickness, we reveal that the flexoelectric field at the film bottom can be used as a criterion to determine whether domain switching may happen under a mechanical force.

  2. Simulation of inhomogeneous magnetoelastic anisotropy in ferroelectric/ferromagnetic nanocomposites

    Science.gov (United States)

    Aimon, Nicolas M.; Liao, Jiexi; Ross, C. A.

    2012-12-01

    The magnetic response of CoFe2O4/BiFeO3 (CFO/BFO) nanocomposite thin films, in which ferromagnetic CFO nanopillars are embedded in a ferroelectric BFO matrix, has been modeled by including the position-dependent magnetoelastic anisotropy of the CFO. A finite element simulation of the strain state of an arrangement of CFO pillars was performed in which the BFO matrix surrounding one or all of the pillars was subject to a piezoelectric strain. The strain transferred to the CFO pillars was calculated and transformed into a spatially varying magnetoelastic anisotropy in the CFO, and a micromagnetic model was then used to calculate the hysteresis of the pillar, which differed significantly from a macrospin model. The position-dependent anisotropy led to a complex reversal process and to a reorientation of the easy axis to the in-plane direction at sufficient applied electric fields.

  3. Atomic layer-deposited Al–HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory

    International Nuclear Information System (INIS)

    Congedo, Gabriele; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina

    2013-01-01

    A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO 2 as tunnel oxide, Al–HfO 2 as charge trapping layer, SiO 2 as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N 2 , as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si 3 N 4 as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO 2 storage layer is fabricated and characterized. ► Al–HfO 2 and SiO 2 blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories

  4. Tailoring ferroelectric interfaces: surface modification of PZT mediated through functionalized thiophene derivates

    Energy Technology Data Exchange (ETDEWEB)

    Milde, Peter; Koehler, Denny; Zerweck, Ulrich; Eng, Lukas M. [Department of Applied Photophysics, TU Dresden (Germany); Haubner, Kinga [Leibniz Institute for Solid State and Materials Research, TU Dresden (Germany); Institute of Macromolecular Chemistry and Textile Chemistry, TU Dresden (Germany); Jaehne, Evelyn [Institute of Macromolecular Chemistry and Textile Chemistry, TU Dresden (Germany)

    2010-07-01

    Organic field effect transistors (OFETs) with a gate ''electrode'' that is made out of a ferroelectric (FE) have become a field of intense research. Non-volatile memory functionality is expected due to the strong and remanent electric field arising from bound surface charges at the FE/molecular interface. In order to achieve excellent electric transport properties, a high degree of intermolecular ordering is inevitable. In our approach, lead zirconate titanate (PZT) is used as material of choice for the design of an ultra-thin ferroelectric gate electrode in a Ferroelectric-OFET. The focus of the present work lays on the growth process of the molecularly thin organic conduction layer, based on {alpha},{omega}-dicyano-{beta},{beta}*-dibutylquaterthiophene (DCNDBQT). Film formation is effectively promoted through specifically designed, bifunctional self-assembling molecules (CNBTPA: 5-cyano-2-(butyl-4-phosphonic acid)-3-butylthiophene) which act as template layer. We report on nc-AFM and KPFM investigation of the template layer's structural and electronic properties.

  5. Strain-induced improper ferroelectricity in Ruddlesden-Popper perovskite halides

    Science.gov (United States)

    Zhang, Yajun; Sahoo, M. P. K.; Shimada, Takahiro; Kitamura, Takayuki; Wang, Jie

    2017-10-01

    Activating multiple symmetry modes and promoting a strong coupling between different modes by strain are indispensable to stabilize a polar ferroelectric (FE) phase from a nonpolar perovskite. Herein, through first-principles calculations, we propose an undiscovered and general avenue to engineering ferroelectricity in photovoltaic perovskites with a Ruddlesden-Popper (RP) structure. It is demonstrated that an experimentally accessible compressive strain can induce an in-plane polarization in RP perovskite halides thin films, resulting in an unusual paraelectric to FE phase transition. The detailed analysis on structure and energy reveals that the unusual FE phase transition in the perovskite halides stems from the strong coupling between strain and antiferrodistortive (AFD) mode. Further calculations show that the strain-AFD coupling-induced ferroelectricity is not only exhibited by perovskite halides but also observed in perovskite sulfides such as Ba3Zr2S7 . Moreover, it is found that the strained FE thin film possesses a suitable band gap of 1.6 eV for photovoltaic application. These findings not only unfold a general way to engineering nonpolar-to-polar transition, but also open an avenue to design optimal FE semiconductors for solar cell applications.

  6. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

    Science.gov (United States)

    Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

    2011-05-01

    The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

  7. Ferroelectricity in the multiferroic hexagonal manganites

    Science.gov (United States)

    Lilienblum, Martin; Lottermoser, Thomas; Manz, Sebastian; Selbach, Sverre M.; Cano, Andres; Fiebig, Manfred

    2015-12-01

    Since their discovery in 1963 the hexagonal manganites have consolidated their role as exotic ferroelectrics with astonishing functionalities. Their introduction as room-temperature device ferroelectrics was followed by observations of giant flexoelectricity, multiferroicity with magnetoelectric domain and domain-wall coupling, protected vortex domain structures, topological domain-scaling behaviour and domain walls with tunable conductance and magnetism. Even after half a century, however, the emergence of the ferroelectric state has remained the subject of fierce debate. We resolve the interplay of electric polarization, topological trimerization and temperature by direct access to the polarization for temperatures up to 1,400 K. Nonlinear optical experiments and piezoresponse force microscopy, complemented by Monte Carlo simulations, reveal a single phase transition with ferroelectricity determined by topology rather than electrostatics. Fundamental properties of the hexagonal manganites, including an explanation for the two-phase-transition controversy as a finite-size scaling effect, are derived from this and highlight why improper ferroelectrics are an inherent source of novel functionalities.

  8. Flexible graphene–PZT ferroelectric nonvolatile memory

    International Nuclear Information System (INIS)

    Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

    2013-01-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

  9. Role of flexoelectric coupling in polarization rotations at the a-c domain walls in ferroelectric perovskites

    Science.gov (United States)

    Cao, Ye; Chen, Long-Qing; Kalinin, Sergei V.

    2017-05-01

    Ferroelectric and ferroelastic domain walls play important roles in ferroelectric properties. However, their couplings with flexoelectricity have been less understood. In this work, we applied phase-field simulation to investigate the flexoelectric coupling with ferroelectric a/c twin structures in lead ziconate titanate thin films. Local stress gradients were found to exist near twin walls that created both lateral and vertical electric fields through the flexoelectric effect, resulting in polarization inclinations from either horizontal or normal orientation, polarization rotation angles deviated from 90°, and consequently highly asymmetric a/c twin walls. By tuning the flexoelectric strengths in a reasonable range from first-principles calculations, we found that the transverse flexoelectric coefficient has a larger influence on the polarization rotation than longitudinal and shear coefficients. As polar rotations that commonly occur at compositional morphotropic phase boundaries contribute to the piezoelectric enhancement, this work calls for further exploration of alternative strain-engineered polar rotations via flexoelectricity in ferroelectric thin films.

  10. Poly (vinylidene fluoride-trifluoroethylene)/barium titanate nanocomposite for ferroelectric nonvolatile memory devices

    International Nuclear Information System (INIS)

    Valiyaneerilakkal, Uvais; Varghese, Soney

    2013-01-01

    The effect of barium titanate (BaTiO 3 ) nanoparticles (particle size <100 nm) on the ferroelectric properties of poly (vinylidenefluoride-trifluoroethylene) P(VDF-TrFE) copolymer has been studied. Different concentrations of nanoparticles were added to P(VDF-TrFE) using probe sonication, and uniform thin films were made. Polarisation - Electric field (P-E) hysteresis analysis shows an increase in remnant polarization (P r ) and decrease in coercive voltage (V c ). Piezo-response force microscopy analysis shows the switching capability of the polymer composite. The topography and surface roughness was studied using atomic force microscopy. It has been observed that this nanocomposite can be used for the fabrication of non-volatile ferroelectric memory devices.

  11. Ferroelectric Properties of Nanoscale PbTiO3 Films by Hydrothemal Method

    International Nuclear Information System (INIS)

    Htet Htet Nwe; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Lead (II) nitride (Pb(NO3)2), titanium dioxide (TiO2) and potassium hydroxide (KOH) were used as starting materials. Lead titanate powder was formed by hydrothermal method at 150 C for 6h. The calcuim fluoride (CaF2) and titanium dioxide (TiO2) were separately adapted as intermediate layer on p-Si (100) substrate. Lead titanate thin film was formed onto CaF2/Si and TiO2/Si substrates by spin processor. 100kHz C-V characteristics of PbTiO3 films were measured by impedance analyzer (LCR meter). Polarization-electric field (P-E) characteristics were measured for both MFIS (Metal/ Ferroelectric/ Insulator/ Semiconductor) structures by applying the same triangular wave electric field in order to allow their application in NVFRAM (Non Volatile Ferroelectric Random Access Memory).

  12. Poly (vinylidene fluoride-trifluoroethylene/barium titanate nanocomposite for ferroelectric nonvolatile memory devices

    Directory of Open Access Journals (Sweden)

    Uvais Valiyaneerilakkal

    2013-04-01

    Full Text Available The effect of barium titanate (BaTiO3 nanoparticles (particle size <100nm on the ferroelectric properties of poly (vinylidenefluoride-trifluoroethylene P(VDF-TrFE copolymer has been studied. Different concentrations of nanoparticles were added to P(VDF-TrFE using probe sonication, and uniform thin films were made. Polarisation - Electric field (P-E hysteresis analysis shows an increase in remnant polarization (Pr and decrease in coercive voltage (Vc. Piezo-response force microscopy analysis shows the switching capability of the polymer composite. The topography and surface roughness was studied using atomic force microscopy. It has been observed that this nanocomposite can be used for the fabrication of non-volatile ferroelectric memory devices.

  13. Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

    Science.gov (United States)

    Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

    2018-02-01

    Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

  14. Dimension effect in the layered structures: ferroelectric - normal metal and ferroelectric - HTSC

    International Nuclear Information System (INIS)

    Vendik, O.G.; Ter-Martirosyan, L.T.

    1994-01-01

    Modified form of differential equation describing the dynamic polarization distribution in ferroelectric layer is proposed. Distribution of polarization and electrical field in ferroelectric layer is identified. The expression is obtained for dielectric permittivity for the layer averaged by thickness both in case of normal metal electrodes (zero boundary conditions for polarization) and in case of electrodes of metal-oxide high-temperature super conductor with assumed availability of ferroelectric properties. The dimension effects in the second case seem to be significantly suppressed. 16 refs.; 3 figs

  15. Bismuth Oxychalcogenides: A New Class of Ferroelectric/Ferroelastic Materials with Ultra High Mobility.

    Science.gov (United States)

    Wu, Menghao; Zeng, Xiao Cheng

    2017-10-11

    Atomically thin Bi 2 O 2 Se has been recently synthesized, and it possesses ultrahigh mobility (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021). Herein, we show first-principles evidence that Bi 2 O 2 Se and a related class of bismuth oxychalcogenides, such as Bi 2 O 2 S and Bi 2 O 2 Te, not only are novel semiconductors with ultrahigh mobility but also possess previously unreported ferroelectricity/ferroelasticity. Such a unique combination of semiconducting with ferroelectric/ferroelastic properties enables bismuth oxychalcogenides to potentially meet a great challenge, that is, integration of room-temperature functional nonvolatile memories into future nanocircuits. Specifically, we predict that bulk Bi 2 O 2 S is both ferroelastic and antiferroelectric and that a thin film with odd number of layers can even be multiferroic with nonzero in-plane polarization, and this polarization can be switchable via ferroelasticity. Moreover, Bi 2 O 2 Te possesses intrinsic out-of-plane ferroelectricity, while Bi 2 O 2 Se possesses piezoelectricity and ferroelectricity upon an in-plane strain. The in-plane strain on Bi 2 O 2 Se can induce giant polarizations (56.1 μC/cm 2 upon 4.1% strain) with the piezoelectric coefficient being about 35 times higher than that of MoS 2 monolayer. The in-plane strain can also enhance the bandgap or even convert indirect to direct bandgap beyond a critical value. The good match among the lattice constants of bismuth oxychalcogenides is also desirable, rendering the epitaxial growth of heterostructure devices free of fabrication issues related to lattice mismatch, thereby allowing high-quality bismuth oxychalcogenide heterostructures tailored by design for a variety of applications.

  16. Lattice Dynamical Properties of Ferroelectric Thin Films at the Nanoscale

    Energy Technology Data Exchange (ETDEWEB)

    Xi, Xiaoxing [Temple University

    2014-01-13

    In this project, we have successfully demonstrated atomic layer-by-layer growth by laser MBE from separate targets by depositing SrTiO3 films from SrO and TiO2 targets. The RHEED intensity oscillation was used to monitor and control the growth of each SrO and TiO2 layer. We have shown that by using separate oxide targets, laser MBE can achieve the same level of stoichiometry control as the reactive MBE. We have also studied strain relaxation in LaAlO3 films and its effect on the 2D electron gas at LaAlO3/SrTiO3 interface. We found that there are two layers of different in-plane lattice constants in the LaAlO3 films, one next to the SrTiO3 substrate nearly coherently strained, while the top part relaxed as the film thickness increases above 20 unit cells. This strain relaxation significantly affect the transport properties of the LaAlO3/SrTiO3 interface.

  17. Spin-driven ferroelectricity in ferroaxial crystals

    Science.gov (United States)

    Chapon, Laurent

    2012-02-01

    Spin-driven ferroelectricity in most non-collinear magnets, such as TbMnO3, is induced by the so-called inverse Dzyalonshinskii-Moriya mechanism and requires a cycloidal magnetic structure, an ordered magnetic state that is not truly chiral (or lacks helicity). Conversely, in a truly chiral magnetic state (proper helix), the pseudo-scalar helicity can not couple directly to the electric polarization, and therefore can't induce ferroelectric order. However, in systems of specific crystal symmetry, named here ``ferroaxials,'' the presence of collective structural rotations mediates an indirect coupling between magnetic helicity and ferroelectricity. I will review our recent experimental results for new compounds of this class, obtained by magnetic X-ray and neutron diffraction techniques, including a clear demonstration that the magnetic helicity can be controlled by an electric field.

  18. Quantum switching of polarization in mesoscopic ferroelectrics

    International Nuclear Information System (INIS)

    Sa de Melo, C.A.

    1996-01-01

    A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. copyright 1996 The American Physical Society

  19. Composition driven structural instability in perovskite ferroelectrics

    Directory of Open Access Journals (Sweden)

    Chao Xu

    2017-04-01

    Full Text Available Ferroelectric solid solutions usually exhibit enhanced functional properties at the morphotropic phase boundary separating two ferroelectric phases with different orientations of polarization. The underlying mechanism is generally associated with polarization rotational instability and the flattened free energy profile. In this work we show that the polarization extensional instability can also be induced at the morphotropic phase boundary beyond the reported polar-nonpolar phase boundary. The piezoelectricity enhanced by this mechanism exhibits excellent thermal stability, which helps to develop high performance piezoelectric materials with good temperature stability.

  20. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  1. Ferroelectric Cathodes in Transverse Magnetic Fields

    International Nuclear Information System (INIS)

    Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

    2002-01-01

    Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode

  2. Residual ferroelectricity, piezoelectricity, and flexoelectricity in barium strontium titanate tunable dielectrics

    Science.gov (United States)

    Garten, Lauren M.

    Loss reduction is critical to the development of Ba 1-xSrxTiO3 (BST) thin film tunable microwave dielectrics. This work addresses mechanisms of loss and performance of Ba1-xSr xTiO3, such as residual ferroelectricity, enhanced flexocoupling, and dc electric field induced piezoelectricity. The presence of residual ferroelectricity --a persistent ferroelectric response above the global phase transition temperature, adds a contribution to dielectric loss from either motion of domain walls or the boundaries of micropolar regions, degrading the tunable performance over a wide frequency range. Rayleigh behavior as a function of temperature was used to track the ferroelectric behavior of BST materials through the ferroelectric to paraelectric transition temperature. The irreversible Rayleigh parameter serve as a metric for the presence of ferroelectricity because this response is dependent on the presence of domain walls, cluster boundaries or phase boundaries. Chemical solution deposited Ba0.7Sr0.3TiO3 films, with relative tunabilities of 86% over 250kV/cm at 100kHz, demonstrated residual ferroelectricity at least 65°C above the ostensible paraelectric transition temperature. The Rayleigh behavior was further corroborated with second harmonic generation, polarization-electric field hysteresis loops and the frequency dependence of the Rayleigh response. The temperature extent of residual ferroelectricity in sputtered and chemical solution deposited films and bulk ceramics was investigated as a function of chemical inhomogeneity on the A-site using electron energy loss spectroscopy. All samples showed some residual ferroelectricity, where the temperature extent was a function of the sample processing. The application of AC electric field for residual ferroelectric measurements of these samples lead to a 100% increase in loss for ac fields exceeding 10kV/cm at room temperature. The presence of residual ferroelectricity in BST also correlates to the increased flexoelectric

  3. Ferroelectric dielectrics integrated on silicon

    CERN Document Server

    Defay, Emmanuel

    2013-01-01

    This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat

  4. Pressure-induced switching in ferroelectrics: Phase-field modeling, electrochemistry, flexoelectric effect, and bulk vacancy dynamics

    Science.gov (United States)

    Cao, Ye; Morozovska, Anna; Kalinin, Sergei V.

    2017-11-01

    Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing us to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However, the mechanisms for pressure-induced polarization switching in ferroelectrics remain highly controversial, with flexoelectricity, polarization rotation and suppression, and bulk and surface electrochemical processes all being potentially relevant. Here we classify possible pressure-induced switching mechanisms, perform elementary estimates, and study in depth using phase-field modeling. We show that magnitudes of these effects are remarkably close and give rise to complex switching diagrams as a function of pressure and film thickness with nontrivial topology or switchable and nonswitchable regions.

  5. Distribution of correlation radii in disordered ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Glinchuk, M. D.; Eliseev, E. A.; Stepanovich, V. A.; Jastrabík, Lubomír

    2002-01-01

    Roč. 81, č. 25 (2002), s. 4808-4810 ISSN 0003-6951 R&D Projects: GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : disordered ferroelectrics * distribution of correlation radii * polar nanoregions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.207, year: 2002

  6. Ferroelectrics under the Synchrotron Light: A Review

    Directory of Open Access Journals (Sweden)

    Luis E. Fuentes-Cobas

    2015-12-01

    Full Text Available Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS and X-ray absorption fine structure (XAFS experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described.

  7. Ferroelectrics under the Synchrotron Light: A Review

    Science.gov (United States)

    Fuentes-Cobas, Luis E.; Montero-Cabrera, María E.; Pardo, Lorena; Fuentes-Montero, Luis

    2015-01-01

    Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described. PMID:28787814

  8. Organic nonvolatile memory devices based on ferroelectricity

    NARCIS (Netherlands)

    Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  9. Organic ferroelectric opto-electronic memories

    NARCIS (Netherlands)

    Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

    2011-01-01

    Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

  10. Pyroelectric Ferroelectric and Resistivity Studies on Samarium ...

    African Journals Online (AJOL)

    Barium Strontium Sodium Niobate (Ba1-xSrx)2NaNb5O15 (BSNN) belongs to tungsten bronze ferroelectric morphotrophic phase boundary (MPB) system at x = 0.6, having large spontaneous polarisation, pyroelectric coefficient and low dielectic constant and is expected to be applicable for piezoceramic filter and ...

  11. From antiferroelectricity to ferroelectricity in smectic mesophases ...

    Indian Academy of Sciences (India)

    PRAMANA c Indian Academy of Sciences. Vol. 61, No. 2. — journal of. August 2003 physics pp. 455–481. From antiferroelectricity to ferroelectricity in smectic mesophases formed by bent-core ... Hence, the materials themselves .... nar mesophases there is an energetic and entropic penalty resulting from the unfavourable.

  12. Photovoltaics with Ferroelectrics: Current Status and Beyond.

    Science.gov (United States)

    Paillard, Charles; Bai, Xiaofei; Infante, Ingrid C; Guennou, Maël; Geneste, Grégory; Alexe, Marin; Kreisel, Jens; Dkhil, Brahim

    2016-07-01

    Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. BiFeO 3 thin films: Novel effects

    Indian Academy of Sciences (India)

    In this paper we report synthesis of phase-pure highly resistive magnetoelectric BiFeO3 thin films on Pt/TiO2/SiO2/Si substrate by using pulsed laser deposition technique. For the first time saturated ferroelectric hysteresis loop has been observed. It has confirmed the presence of ferroelectricity in BiFeO3 compound.

  14. Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

    Science.gov (United States)

    Kim, Yu Jin; Park, Hyeon Woo; Hyun, Seung Dam; Kim, Han Joon; Kim, Keum Do; Lee, Young Hwan; Moon, Taehwan; Lee, Yong Bin; Park, Min Hyuk; Hwang, Cheol Seong

    2017-12-13

    Ferroelectric (FE) capacitor is a critical electric component in microelectronic devices. Among many of its intriguing properties, the recent finding of voltage drop (V-drop) across the FE capacitor while the positive charges flow in is especially eye-catching. This finding was claimed to be direct evidence that the FE capacitor is in negative capacitance (NC) state, which must be useful for (infinitely) high capacitance and ultralow voltage operation of field-effect transistors. Nonetheless, the NC state corresponds to the maximum energy state of the FE material, so it has been widely accepted in the community that the material alleviates that state by forming ferroelectric domains. This work reports a similar V-drop effect from the 150 nm thick epitaxial BaTiO 3 ferroelectric thin film, but the interpretation was completely disparate; the V-drop can be precisely simulated by the reverse domain nucleation and propagation of which charge effect cannot be fully compensated for by the supplied charge from the external charge source. The disappearance of the V-drop effect was also observed by repeated FE switching only up to 10 cycles, which can hardly be explained by the involvement of the NC effect. The retained reverse domain nuclei even after the subsequent poling can explain such behavior.

  15. Giant quadratic electro-optical effect during polarization switching in ultrathin ferroelectric polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L. M., E-mail: lev39blinov@gmail.com; Lazarev, V. V.; Palto, S. P.; Yudin, S. G. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-04-15

    The low-frequency quadratic electro-optical effect with a maximum electro-optical coefficient of g = 8 Multiplication-Sign 10{sup -19} m{sup 2}/V{sup 2} (i.e., four orders of magnitude greater than the standard high-frequency value) has been studied in thin films of ferroelectric polymer PVDF(70%)-TrFE(30%). The observed effect is related to the process of spontaneous polarization switching, during which the electron oscillators of C-F and C-H dipole groups rotate to become parallel to the applied field. As a result, the ellipsoid of the refractive index exhibits narrowing in the direction perpendicular to the field. The field dependence of the electro-optical coefficient g correlates with that of the apparent dielectric permittivity, which can be introduced under the condition of ferroelectric polarization switching. The observed electro-optical effect strongly decreases when the frequency increases up to several hundred hertz. The temperature dependence of the effect exhibits clearly pronounced hysteresis in the region of the ferroelectric phase transition.

  16. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications ...

  17. Room-temperature relaxor ferroelectricity and photovoltaic effects in tin titanate directly deposited on a silicon substrate

    Science.gov (United States)

    Agarwal, Radhe; Sharma, Yogesh; Chang, Siliang; Pitike, Krishna C.; Sohn, Changhee; Nakhmanson, Serge M.; Takoudis, Christos G.; Lee, Ho Nyung; Tonelli, Rachel; Gardner, Jonathan; Scott, James F.; Katiyar, Ram S.; Hong, Seungbum

    2018-02-01

    Tin titanate (SnTi O3 ) has been notoriously impossible to prepare as a thin-film ferroelectric, probably because high-temperature annealing converts much of the S n2 + to S n4 + . In the present paper, we show two things: first, perovskite phase SnTi O3 can be prepared by atomic-layer deposition directly onto p -type Si substrates; and second, these films exhibit ferroelectric switching at room temperature, with p -type Si acting as electrodes. X-ray diffraction measurements reveal that the film is single-phase, preferred-orientation ferroelectric perovskite SnTi O3 . Our films showed well-saturated, square, and repeatable hysteresis loops of around 3 μ C /c m2 remnant polarization at room temperature, as detected by out-of-plane polarization versus electric field and field cycling measurements. Furthermore, photovoltaic and photoferroelectricity were found in Pt /SnTi O3/Si /SnTi O3/Pt heterostructures, the properties of which can be tuned through band-gap engineering by strain according to first-principles calculations. This is a lead-free room-temperature ferroelectric oxide of potential device application.

  18. Stoichiometry as key to ferroelectricity in compressively strained SrTiO{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Haislmaier, R. C.; Engel-Herbert, R.; Gopalan, V. [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-07-18

    While strain is a powerful tuning parameter for inducing ferroelectricity in thin film oxides, the role of stoichiometry control is critical, but far less explored. A series of compressively strained SrTiO{sub 3} films on (001) (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.35} substrates were grown by hybrid molecular beam epitaxy where the Ti cation was supplied using a metal-organic titanium tetraisopropoxide molecule that helps systematically and precisely control Sr:Ti stoichiometry in the resulting films. A stoichiometric growth window is located through X-ray diffraction and in-situ reflection high-energy electron diffraction measurements, which show a minimum out-of-plane lattice parameter as well as constant growth rate within the stoichiometric growth window range. Using temperature dependent optical second harmonic generation (SHG) characterization, a ferroelectric-to-paraelectric transition at T ∼ 180 K is observed for a stoichiometric SrTiO{sub 3} film, as well as a higher temperature structural transition at T ∼ 385 K. Using SHG polarimetry modeling, the polar point group symmetry is determined to be tetragonal 4mm with the polarization pointing out-of-plane of the film. The SHG coefficients, d{sub 31}/d{sub 15}=3 and d{sub 33}/d{sub 15}=21, were determined at 298 K. The ferroelectric transition disappears in films grown outside the growth window, thus proving the critical role of stoichiometry control in realizing strain-induced ferroelectricity.

  19. Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

    Science.gov (United States)

    Ramesh, R.; Chan, W. K.; Wilkens, B.; Gilchrist, H.; Sands, T.; Tarascon, J. M.; Keramidas, V. G.; Fork, D. K.; Lee, J.; Safari, A.

    1992-09-01

    Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y-Ba-Cu-O(YBCO) thin-film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria-stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a- and c-axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.

  20. High-Mobility and High-Optical Quality Atomically Thin WS 2.

    Science.gov (United States)

    Reale, Francesco; Palczynski, Pawel; Amit, Iddo; Jones, Gareth F; Mehew, Jake D; Bacon, Agnes; Ni, Na; Sherrell, Peter C; Agnoli, Stefano; Craciun, Monica F; Russo, Saverio; Mattevi, Cecilia

    2017-11-02

    The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS 2 ) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS 2 leads to superior material quality compared to the widely used direct sulfidization of WO 3 -based precursors. Record high room temperature charge carrier mobility up to 52 cm 2 /Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes.

  1. Ferroelectric nanostructure having switchable multi-stable vortex states

    Science.gov (United States)

    Naumov, Ivan I [Fayetteville, AR; Bellaiche, Laurent M [Fayetteville, AR; Prosandeev, Sergey A [Fayetteville, AR; Ponomareva, Inna V [Fayetteville, AR; Kornev, Igor A [Fayetteville, AR

    2009-09-22

    A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

  2. Ferroelectric devices, interconnects, and methods of manufacture thereof

    KAUST Repository

    Alshareef, Husam N.

    2013-12-12

    A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

  3. A Temperature-Dependent Hysteresis Model for Relaxor Ferroelectric Compounds

    National Research Council Canada - National Science Library

    Raye, Julie K; Smith, Ralph C

    2004-01-01

    This paper summarizes the development of a homogenized free energy model which characterizes the temperature-dependent hysteresis and constitutive nonlinearities inherent to relaxor ferroelectric materials...

  4. Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jia-Ling; Lin, Han-Yu; Su, Bo-Yuan; Chen, Yu-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liu, Ssu-Yin [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Chang, Chia-Chiang; Wu, Chin-Jyi [Industrial Technology Research Institute, Mechanical and Systems Research Laboratories, Hsinchu 310, Taiwan (China)

    2014-04-01

    Highlights: • The electrodes of bi-layer GZO/ ZnO and single-layer GZO in α-IGZO TFT were compared. • The TFT performances of two different structures were systematically investigated. • The bi-layer GZO/100-nm ZnO S/D electrodes showed the better TFT device properties. - Abstract: In this research, top-gate bottom-contact thin-film transistors (TFTs) made with amorphous indium gallium zinc oxide (α-IGZO) active layers were grown using the radio-frequency sputtering technique. Two kinds of source and drain (S/D) electrodes, namely bi-layer GZO/100-nm ZnO buffer layer/Corning 1737 and single-layer GZO/Corning 1737, used in the TFT devices and the electric characteristics of the devices were compared. To explain the differences in the TFT performances with these different S/D electrodes, X-ray reflectivity (XRR) and contact angles were measured. The α-IGZO TFT with the bi-layer GZO/100-nm ZnO buffer layer structure as S/D electrodes exhibited superior device performance compared to that of the TFT with a single-layer GZO structure, with a higher thin film density (5.94 g/cm{sup 3}), lower surface roughness (0.817 nm), and larger surface energy (62.07 mJ/m{sup 2}) and better adhesion properties of neighboring α-IGZO films. In addition, the mechanisms responsible for the GZO/100-nm ZnO buffer layer/Corning 1737 structure S/D electrodes improving the device characteristics were systematically investigated. The α-IGZO TFT saturation mobility, subthreshold voltage, on/off current ratio, and the trap density of the GZO/100-nm ZnO buffer layer/Corning 1737 S/D electrodes were 13.5 cm{sup 2} V{sup −1} S{sup −1}, 0.43 V/decade, 3.56 × 10{sup 7}, and 5.65 × 10{sup 12} eV{sup −1} cm{sup −2}, respectively, indicating the potential of this bi-layer structure to be applied to large-area flat-panel displays.

  5. Fast Ferroelectric L-band Tuner

    International Nuclear Information System (INIS)

    Kazakov, S. Yu.; Yakovlev, V. P.; Hirshfield, J. L.; Kanareykin, A. D.; Nenasheva, E. A.

    2006-01-01

    Description is given of a preliminary conceptual design for a tuner that employs a new ferroelectric ceramic that allows fast changes in coupling between the SRF acceleration structure of a linac and the external RF feeding line. The switching time of this device is in the range of a few microseconds. Utilization of this tuner is predicted to decrease Ohmic losses in the acceleration structure and thereby to reduce the power consumption of the linac. Using parameters of the TESLA-800 collider as an example, it is shown that it may be possible to reduce the ac mains power consumption by 12 MW, or about by 10%. The design of the tuner that is described allows reduced pulsed and average heating of the ferroelectric ceramics

  6. Nanostructure and Defect Chemistry of Relaxor Ferroelectrics

    Science.gov (United States)

    1988-07-31

    Pb(Scl/ 2Ta1 )O3._ (PST), undoped and La/Na-doped Pb(Mg1P3Nb2/3 )O (PMN) and ,yBa(Zn1/3Nb2 )O (BZN), 2) micro -polar domains in normal ferroelectrics...1 /2Ta1/2)03 (PST), undoped and La/Na-doped Pb(Mg 1 /3Nb 2 / 3)03 (PMIN) and Ba(Zn1 /3Nb2/ 3)03 (BZN), 2) micro -polar domains in normal ferroelectrics...meeting of Amer. Cer. Soc., (1987) [18] L. PADEL, P. POIX, and A.MICHEL; Revue de chimie minerale , 337, 9, (1972) [19] E. J. FRESIA, L. KATZ and R

  7. Glucose Suppresses Biological Ferroelectricity in Aortic Elastin

    Science.gov (United States)

    Liu, Yuanming; Wang, Yunjie; Chow, Ming-Jay; Chen, Nataly Q.; Ma, Feiyue; Zhang, Yanhang; Li, Jiangyu

    2013-04-01

    Elastin is an intriguing extracellular matrix protein present in all connective tissues of vertebrates, rendering essential elasticity to connective tissues subjected to repeated physiological stresses. Using piezoresponse force microscopy, we show that the polarity of aortic elastin is switchable by an electrical field, which may be associated with the recently discovered biological ferroelectricity in the aorta. More interestingly, it is discovered that the switching in aortic elastin is largely suppressed by glucose treatment, which appears to freeze the internal asymmetric polar structures of elastin, making it much harder to switch, or suppressing the switching completely. Such loss of ferroelectricity could have important physiological and pathological implications from aging to arteriosclerosis that are closely related to glycation of elastin.

  8. A ferroelectric memory technology for embedded LSI

    CERN Document Server

    Kunio, T

    1999-01-01

    We have developed an FeRAM (Ferroelectric Random Access Memory) embedded smart card LSI by using double metal 0.8- mu m CMOS technology. The smart-card has a 256-byte FeRAM macro and an 8-bit microcontroller. The FeRAM macro has the $9 performance of 10/sup 8/ endurance cycles and is half the size of an EEPROM macro. We have also developed a new CMVP (Capacitor on Meta/Via Stacked Plug) cell for an advanced FeRAM embedded LSI by using 0.25- mu m CMOS technology. $9 The ferroelectric capacitors of this cell are fabricated after the multiple interconnect is formed, and a cell area of 3.2 mu m/sup 2/ is obtained. (8 refs).

  9. Upper bounds for flexoelectric coefficients in ferroelectrics

    Science.gov (United States)

    Yudin, P. V.; Ahluwalia, R.; Tagantsev, A. K.

    2014-02-01

    Flexoelectric effect is the response of electric polarization to the mechanical strain gradient. At the nano-scale, where large strain gradients are expected, the flexoelectric effect becomes appreciable and may substitute piezoelectric effect in centrosymmetric materials. These features make flexoelectricity of growing interest during the last decade. At the same time, the available theoretical and experimental results are rather contradictory. In particular, experimentally measured flexoelectric coefficients in some ferroelectric materials largely exceed theoretically predicted values. Here, we determine the upper limits for the magnitude of the static bulk contribution to the flexoelectric effect in ferroelectrics, the contribution which was customarily considered as the dominating one. The magnitude of the upper bounds obtained suggests that the anomalously high flexoelectric coupling documented for perovskite ceramics can hardly be attributed to a manifestation of the static bulk effect.

  10. Fracture mechanics of piezoelectric and ferroelectric solids

    CERN Document Server

    Fang, Daining

    2013-01-01

    Fracture Mechanics of Piezoelectric and Ferroelectric Solids presents a systematic and comprehensive coverage of the fracture mechanics of piezoelectric/ferroelectric materials, which includes the theoretical analysis, numerical computations and experimental observations. The main emphasis is placed on the mechanics description of various crack problems such static, dynamic and interface fractures as well as the physical explanations for the mechanism of electrically induced fracture. The book is intended for postgraduate students, researchers and engineers in the fields of solid mechanics, applied physics, material science and mechanical engineering. Dr. Daining Fang is a professor at the School of Aerospace, Tsinghua University, China; Dr. Jinxi Liu is a professor at the Department of Engineering Mechanics, Shijiazhuang Railway Institute, China.

  11. Light-Activated Gigahertz Ferroelectric Domain Dynamics

    Science.gov (United States)

    Akamatsu, Hirofumi; Yuan, Yakun; Stoica, Vladimir A.; Stone, Greg; Yang, Tiannan; Hong, Zijian; Lei, Shiming; Zhu, Yi; Haislmaier, Ryan C.; Freeland, John W.; Chen, Long-Qing; Wen, Haidan; Gopalan, Venkatraman

    2018-03-01

    Using time- and spatially resolved hard x-ray diffraction microscopy, the striking structural and electrical dynamics upon optical excitation of a single crystal of BaTiO3 are simultaneously captured on subnanoseconds and nanoscale within individual ferroelectric domains and across walls. A large emergent photoinduced electric field of up to 20 ×106 V /m is discovered in a surface layer of the crystal, which then drives polarization and lattice dynamics that are dramatically distinct in a surface layer versus bulk regions. A dynamical phase-field modeling method is developed that reveals the microscopic origin of these dynamics, leading to gigahertz polarization and elastic waves traveling in the crystal with sonic speeds and spatially varying frequencies. The advances in spatiotemporal imaging and dynamical modeling tools open up opportunities for disentangling ultrafast processes in complex mesoscale structures such as ferroelectric domains.

  12. The impact of charge compensated and uncompensated strontium defects on the stabilization of the ferroelectric phase in HfO2

    Science.gov (United States)

    Materlik, Robin; Künneth, Christopher; Mikolajick, Thomas; Kersch, Alfred

    2017-08-01

    Different dopants with their specific dopant concentration can be utilized to produce ferroelectric HfO2 thin films. In this work, it is explored for Sr in a comprehensive first-principles study. Density functional calculations reveal structure, formation energy, and total energy of the Sr related defects in HfO2. We found the charge compensated defect with an associated oxygen vacancy SrHfVO to strongly favour the non-ferroelectric, tetragonal P42/mnc phase energetically. In contrast, the uncompensated defect without oxygen vacancy SrHf favours the ferroelectric, orthorhombic Pca21 phase. According to the formation energy, the uncompensated defect can form easily under oxygen rich conditions in the production process. Low oxygen partial pressure existing over the lifetime promotes the loss of oxygen leading to VO, and thus, the destabilization of the ferroelectric, orthorhombic Pca21 phase is accompanied by an increase of the leakage current. This study attempts to fundamentally explain the stabilization of the ferroelectric, orthorhombic Pca21 phase by doping.

  13. Electrically induced mechanical precompression of ferroelectric plates

    Science.gov (United States)

    Chen, P.J.

    1987-03-02

    A method of electrically inducing mechanical precompression of ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion. 2 figs.

  14. Tunable Metallic Conductivity in Ferroelectric Nanodomains

    Science.gov (United States)

    Maksymovych, P.; Morozovska, A. N.; Yu, P.; Eliseev, E. A.; Chu, Y.-H.; Ramesh, R.; Baddorf, A. P.; Kalinin, S. V.

    2012-02-01

    Domain wall conductivity in ferroelectric and multiferroic oxides is an essential example of new electronic properties created by topological defects. So far electron transport through domain walls in canonical BiFeO3 and PbZr0.2Ti0.8O3 (PZT) ferroelectrics has been dominated by thermally activated hopping, concealing the enabling physics and limiting potential applications. We will present a pioneering observation of metallic conductivity in nanoscale ferroelectric domains in PZT, that unambiguously identifies a new conduction channel created through the bulk of the oxide film [1]. From a corollary theoretical analysis, we conclude that metallic conductance is enabled by the interplay of charging and flexoelectric effects at tilted and curved walls of the nanodomain. Furthermore, both type and density of carriers can be tuned by manipulation of the order parameter. Thus, a new family of electronic properties may be found in multiferroic and topologically nanostructured complex oxides. [1] Maksymovych et al, Nano Lett. in review (2011). Research conducted at the Center for Nanophase Materials Sciences, sponsored by BES, U. S. DOE.

  15. Experimental evidence of enhanced ferroelectricity in Ca doped BiFeO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Costa, L.V.; Deus, R.C. [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil); Foschini, C.R.; Longo, E. [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Bauru, Dept. de Eng. Mecânica, Av. Eng. Luiz Edmundo C. Coube 14-01, 17033-360 Bauru, SP (Brazil); Cilense, M. [Universidade Estadual Paulista, UNESP, Instituto de Química – Laboratório Interdisciplinar em Cerâmica (LIEC), Rua Professor Francisco Degni s/n, 14800-90 Araraquara, SP (Brazil); Simões, A.Z., E-mail: alezipo@yahoo.com [Universidade Estadual Paulista, UNESP, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil)

    2014-04-01

    Calcium (Ca)-doped bismuth ferrite (BiFeO{sub 3}) thin films prepared by using the polymeric precursor method (PPM) were characterized by X-ray diffraction (XRD), field emission gun scanning electron microscopy (FEG-SEM), transmission electron microscopy (TEM), polarization and piezoelectric measurements. Structural studies by XRD and TEM reveal the co-existence of distorted rhombohedral and tetragonal phases in the highest doped BiFeO{sub 3} where enhanced ferroelectric and piezoelectric properties are produced by internal strain. Resistive switching is observed in BFO and Ca-doped BFO which are affected by the barrier contact and work function of multiferroic materials and Pt electrodes. A high coercive field in the hysteresis loop is observed for the BiFeO{sub 3} film. Piezoelectric properties are improved in the highest Ca-doped sample due to changes in the crystal structure of BFO for a primitive cubic perovskite lattice with four-fold symmetry and a large tetragonal distortion within the crystal domain. This observation introduces magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom which are already present in the multiferroic BiFeO{sub 3}. - Highlights: • Ca doped BiFeO{sub 3} thin films were obtained by the polymeric precursor method. • Co-existence of distorted rhombohedral and tetragonal phases are evident. • Enhanced ferroelectric and piezoelectric properties are produced by the internal strain in the Ca doped BiFeO{sub 3} film.

  16. Effect of domains configuration on crystal structure in ferroelectric ...

    Indian Academy of Sciences (India)

    2017-09-09

    Sep 9, 2017 ... high piezoelectric response of ferroelectrics material can be achieved at the morphotropic phase boundary (MPB) region among two ferroelectric phases in their phase diagrams due to a low polarization anisotropy caused by the phase instabil- ity [6,7]. Nevertheless, the exact structure at MPB region is.

  17. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  18. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  19. Phase transition in triglycine family of hydrogen bonded ferroelectrics

    Indian Academy of Sciences (India)

    Hydrogen bonded ferroelectric crystals form a subclass of ferroelectrics in which hydrogen bonds play an important role in determining the properties. Triglycine family is one such class which includes triglycine sulphate (TGS), triglycine selenate. (TGSe), triglycine fluoroberyllate (TGFBe), mixed crystals like ...

  20. Organic ferroelectrics based on hydrogen-bonded supermolecules

    International Nuclear Information System (INIS)

    Horiuchi, Sachio; Kumai, Reiji; Tokura, Yoshinori

    2007-01-01

    This article describes a new design strategy and prospective approaches to the fabrication of novel organic ferroelectrics. Ferroelectricity and a significant dielectric response as well as collective proton transfer are demonstrated in the hydrogen-bonded supramolecular chains composed of 2,5-dihydroxy-p-benzoquinone derivatives (acid) and nitrogen-containing aromatic bases. (author)

  1. Improving information density in ferroelectric polymer films by using nanoimprinted gratings

    Science.gov (United States)

    Martínez-Tong, Daniel E.; Soccio, Michela; Rueda, Daniel R.; Nogales, Aurora; García-Gutiérrez, Mari Cruz; Ezquerra, Tiberio A.

    2015-03-01

    The development of polymer non-volatile memories depends on the effective fabrication of devices with high density of information. Well-defined low aspect ratio nanogratings on thin films of poly(vinylidene fluoride-trifluoroethylene) copolymers can be fabricated by using Nanoimprint Lithography (NIL). By using these nanogratings, an improved management of writing and reading information can be reached as revealed by Piezoresponse Force Microscopy (PFM). Structural investigation by means of Grazing Incidence X-ray (GIX) scattering techniques indicates that the physical confinement generated by nanoimprint promotes the development of smaller and edge-on oriented crystals. Our results evidence that one-dimensional nanostructuring can be a straightforward approach to improve the control of the polarization in ferroelectric polymer thin films.

  2. Electric field effect in superconductor-ferroelectric structures

    Science.gov (United States)

    Lemanov, V. V.

    1995-01-01

    Electric field effect (the E-effect) in superconductors has been studied since 1960 when Glover and Sherill published their results on a shift of the critical temperature T(sub c) about 0.1 mK in Sn and In thin films under the action Off the field E=300 kV/cm. Stadler was the first to study the effect or spontaneous polarization of ferroelectric substrate on the electric properties of superconductors. He observed that the reversal of polarization of TGS substrate under action of external electric field in Sn-TGS structures induced the T(sub c) shift in Sn about 1.3 mK. Since in this case the effect is determined not by the electric field but by the spontaneous polarization, we may call this effect the P-effect. High-T(sub c) superconductors opened the new possibilities to study the E- and P-effects due to low charge carrier density, as compared to conventional superconductors, and to anomalously small coherence length. Experiments in this field began in many laboratories but a breakthrough was made where a shift in T(sub c) by 50 mK was observed in YBCO thin films. Much higher effects were observed in subsequent studies. The first experiments on the P-effect in high-T(sub c) superconductors were reported elsewhere. In this report we shall give a short description of study on the P-effect in high-T(sub c) superconductors.

  3. Temperature dependence of electronic transport property in ferroelectric polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.L.; Wang, J.L., E-mail: jlwang@mail.sitp.ac.cn; Tian, B.B.; Liu, B.L.; Zou, Y.H.; Wang, X.D.; Sun, S.; Sun, J.L., E-mail: jlsun@mail.sitp.ac.cn; Meng, X.J.; Chu, J.H.

    2014-10-15

    Highlights: • The ferroelectric polymer was fabricated by Langmuir–Blodgett method. • The electrons as the dominant injected carrier were conformed in the ferroelectric polymer films. • The leakage current conduction mechanisms in ferroelectric polymer were investigated. - Abstract: The leakage current mechanism of ferroelectric copolymer of polyvinylidene fluoride with trifluoroethylene prepared by Langmuir–Blodgett was investigated in the temperature range from 100 K to 350 K. The electron as the dominant injected carrier was observed in the ferroelectric copolymer films. The transport mechanisms in copolymer strongly depend on the temperature and applied voltage. From 100 K to 200 K, Schottky emission dominates the conduction. With temperature increasing, the Frenkel–Poole emission instead of the Schottky emission to conduct the carrier transport. When the temperature gets to 260 K, the leakage current becomes independent of temperature, and the space charge limited current conduction was observed.

  4. An Automated Ab Initio Framework for Identifying New Ferroelectrics

    Science.gov (United States)

    Smidt, Tess; Reyes-Lillo, Sebastian E.; Jain, Anubhav; Neaton, Jeffrey B.

    Ferroelectric materials have a wide-range of technological applications including non-volatile RAM and optoelectronics. In this work, we present an automated first-principles search for ferroelectrics. We integrate density functional theory, crystal structure databases, symmetry tools, workflow software, and a custom analysis toolkit to build a library of known and proposed ferroelectrics. We screen thousands of candidates using symmetry relations between nonpolar and polar structure pairs. We use two search strategies 1) polar-nonpolar pairs with the same composition and 2) polar-nonpolar structure type pairs. Results are automatically parsed, stored in a database, and accessible via a web interface showing distortion animations and plots of polarization and total energy as a function of distortion. We benchmark our results against experimental data, present new ferroelectric candidates found through our search, and discuss future work on expanding this search methodology to other material classes such as anti-ferroelectrics and multiferroics.

  5. Effects of BaBi2Ta2O9 thin buffer layer on crystallization and electrical properties of CaBi2Ta2O9 thin films on Pt-coated silicon

    Science.gov (United States)

    Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi

    2001-05-01

    Non-c-axis oriented CaBi2Ta2O9 (CBT) thin films have been successfully deposited via the triple alkoxide solution method on Pt-coated Si substrates by inserting BaBi2Ta2O9 (BBT) thin buffer layers. The BBT thin buffer layer, which was prepared on Pt-coated Si, was a key material for suppression of the nonpolar c-axis orientation and promoting the ferroelectric structure perpendicular to the in-plane direction of CBT thin film. The annealing temperature and thickness of the BBT thin buffer layers affected the dielectric, ferroelectric, and fatigue properties of the stacked CBT/BBT thin films. The resultant 650 °C annealed CBT/BBT(30 nm) thin film exhibited good P-E hysteresis properties and fatigue behaviors.

  6. Intermixing at the heterointerface between ZnS Zn S,O bilayer buffer and CuInS2 thin film solar cell absorber

    OpenAIRE

    Bär, M.; Ennaoui, A.; Klaer, J.; Kropp, T.; S ez Araoz, R.; Lehmann, S.; Grimm, A.; Lauermann, I.; Loreck, Ch.; Sokoll, St.; Schock, H. W.; Fischer, Ch. H.; Lux Steiner, M.C.; Jung, Ch

    2006-01-01

    The application of Zn compounds as buffer layers was recently extended to wide gap CuInS2 CIS based thin film solar cells. Using a new chemical deposition route for the buffer preparation aiming at the deposition of a single layer, nominal ZnS buffer without the need for any toxic reactants such as, e.g. hydrazine has helped to achieve a similar efficiency as respective CdS buffered reference devices. After identifying the deposited Zn compound, as ZnS Zn S,O bi layer buffer in former in...

  7. A Ferroelectric Oxide Made Directly on Silicon

    Science.gov (United States)

    2009-04-17

    study were doped with n-type phosphorus (1 × 1015 to 5 × 1015 phosphorus atoms/cm3) having a resistivity of 1 to 4 ohm·cm. Each layer that was grown...substantially reduced tran- sition temperature, as has been shown for the related ferroelectrics PbTiO3 (28) and BaTiO3 (29). Thus, the observed...1024 1024 pixel image was rebinned to 512 512 pixels. A B C -300 -200 -100 0 100 200 300 In te ns it y (a rb it ra ry u ni ts ) (arc seconds

  8. Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

    International Nuclear Information System (INIS)

    Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

    2005-01-01

    The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

  9. Crystallinity and electrical properties of neodymium-substituted bismuth titanate thin films

    International Nuclear Information System (INIS)

    Chen, Y.-C.; Hsiung, C.-P.; Chen, C.-Y.; Gan, J.-Y.; Sun, Y.-M.; Lin, C.-P.

    2006-01-01

    We report on the properties of Nd-substituted bismuth titanate Bi 4-x Nd x Ti 3 O 12 (BNdT) thin films for ferroelectric non-volatile memory applications. The Nd-substituted bismuth titanate thin films fabricated by modified chemical solution deposition technique showed much improved properties compared to pure bismuth titanate. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 640 deg. C and grain size was found to be considerably increased as the annealing temperature increased. The film properties were found to be strongly dependent on the Nd content and annealing temperatures. The measured dielectric constant of BNdT thin films was in the range 172-130 for Bi 4-x Nd x Ti 3 O 12 with x 0.0-0.75. Ferroelectric properties of Nd-substituted bismuth titanate thin films were significantly improved compared to pure bismuth titanate. For example, the observed 2P r and E c for Bi 3.25 Nd 0.75 Ti 3 O 12 , annealed at 680 deg. C, were 38 μC/cm 2 and 98 kV/cm, respectively. The improved microstructural and ferroelectric properties of BNdT thin films suggest their suitability for high density ferroelectric random access memory applications

  10. Ultrahigh piezoelectricity in ferroelectric ceramics by design

    Science.gov (United States)

    Li, Fei; Lin, Dabin; Chen, Zibin; Cheng, Zhenxiang; Wang, Jianli; Li, ChunChun; Xu, Zhuo; Huang, Qianwei; Liao, Xiaozhou; Chen, Long-Qing; Shrout, Thomas R.; Zhang, Shujun

    2018-03-01

    Piezoelectric materials, which respond mechanically to applied electric field and vice versa, are essential for electromechanical transducers. Previous theoretical analyses have shown that high piezoelectricity in perovskite oxides is associated with a flat thermodynamic energy landscape connecting two or more ferroelectric phases. Here, guided by phenomenological theories and phase-field simulations, we propose an alternative design strategy to commonly used morphotropic phase boundaries to further flatten the energy landscape, by judiciously introducing local structural heterogeneity to manipulate interfacial energies (that is, extra interaction energies, such as electrostatic and elastic energies associated with the interfaces). To validate this, we synthesize rare-earth-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), as rare-earth dopants tend to change the local structure of Pb-based perovskite ferroelectrics. We achieve ultrahigh piezoelectric coefficients d33 of up to 1,500 pC N-1 and dielectric permittivity ɛ33/ɛ0 above 13,000 in a Sm-doped PMN-PT ceramic with a Curie temperature of 89 °C. Our research provides a new paradigm for designing material properties through engineering local structural heterogeneity, expected to benefit a wide range of functional materials.

  11. Transformable ferroelectric control of dynamic magnetic permeability

    Science.gov (United States)

    Jiang, Changjun; Jia, Chenglong; Wang, Fenglong; Zhou, Cai; Xue, Desheng

    2018-02-01

    Magnetic permeability, which measures the response of a material to an applied magnetic field, is crucial to the performance of magnetic devices and related technologies. Its dynamic value is usually a complex number with real and imaginary parts that describe, respectively, how much magnetic power can be stored and lost in the material. Control of permeability is therefore closely related to energy redistribution within a magnetic system or energy exchange between magnetic and other degrees of freedom via certain spin-dependent interactions. To avoid a high power consumption, direct manipulation of the permeability with an electric field through magnetoelectric coupling leads to high efficiency and simple operation, but remains a big challenge in both the fundamental physics and material science. Here we report unambiguous evidence of ferroelectric control of dynamic magnetic permeability in a Co /Pb (Mg1/3Nb2/3) 0.7Ti0.3O3 (Co/PMN-PT) heterostructure, in which the ferroelectric PMN-PT acts as an energy source for the ferromagnetic Co film via an interfacial linear magnetoelectric interaction. The electric field tuning of the magnitude and line shape of the permeability offers a highly localized means of controlling magnetization with ultralow power consumption. Additionally, the emergence of negative permeability promises a new way of realizing functional nanoscale metamaterials with adjustable refraction index.

  12. Ultrahigh piezoelectricity in ferroelectric ceramics by design.

    Science.gov (United States)

    Li, Fei; Lin, Dabin; Chen, Zibin; Cheng, Zhenxiang; Wang, Jianli; Li, ChunChun; Xu, Zhuo; Huang, Qianwei; Liao, Xiaozhou; Chen, Long-Qing; Shrout, Thomas R; Zhang, Shujun

    2018-04-01

    Piezoelectric materials, which respond mechanically to applied electric field and vice versa, are essential for electromechanical transducers. Previous theoretical analyses have shown that high piezoelectricity in perovskite oxides is associated with a flat thermodynamic energy landscape connecting two or more ferroelectric phases. Here, guided by phenomenological theories and phase-field simulations, we propose an alternative design strategy to commonly used morphotropic phase boundaries to further flatten the energy landscape, by judiciously introducing local structural heterogeneity to manipulate interfacial energies (that is, extra interaction energies, such as electrostatic and elastic energies associated with the interfaces). To validate this, we synthesize rare-earth-doped Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT), as rare-earth dopants tend to change the local structure of Pb-based perovskite ferroelectrics. We achieve ultrahigh piezoelectric coefficients d 33 of up to 1,500 pC N -1 and dielectric permittivity ε 33 /ε 0 above 13,000 in a Sm-doped PMN-PT ceramic with a Curie temperature of 89 °C. Our research provides a new paradigm for designing material properties through engineering local structural heterogeneity, expected to benefit a wide range of functional materials.

  13. Ferroelectric Polymer Composite with Enhanced Breakdown Strength

    Science.gov (United States)

    Han, Kuo; Gadinski, Matthew; Wang, Qing

    2013-03-01

    Numerous efforts have been made in the past decades to improve the energy storage capability of dielectric capacitors by incorporating ceramic addictives into polymers. Ferroelectric polymers have been particularly interesting as matrix for dielectric composites because of their highest dielectric permittivity and energy density. However, most polymer composites suffer from significantly reduced breakdown strength, which compromises the potential gain in energy density. In this work, various metallic alkoxide were introduced into the functionalized ferroelectric poly(vinylidene fluoride-co- chlorotrifluoroethylene), P(VDF-CTFE), via covalent bonding. The composite with the optimized composition exhibited the Weibull statistical breakdown strength of 504.8 MV/m, 67.6 % higher than the pristine polymer. The enhanced breakdown strength was mainly ascribed to the cross-linking and the formation of deep traps, which effectively reduced the conduction and further lowered the energy loss. Additionally, the homogeneous dispersion of the inorganic phase and the small contrast in permittivity between the polymer and amorphous oxides also contribute to the improved dielectric strength. The dielectric spectra of the composites have been recorded at varied temperatures and frequencies, which revealed the presence of the interfacial polarization layer in the composites.

  14. Ferroelectric based catalysis: Switchable surface chemistry

    Science.gov (United States)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab

    2015-03-01

    We describe a new class of catalysts that uses an epitaxial monolayer of a transition metal oxide on a ferroelectric substrate. The ferroelectric polarization switches the surface chemistry between strongly adsorptive and strongly desorptive regimes, circumventing difficulties encountered on non-switchable catalytic surfaces where the Sabatier principle dictates a moderate surface-molecule interaction strength. This method is general and can, in principle, be applied to many reactions, and for each case the choice of the transition oxide monolayer can be optimized. Here, as a specific example, we show how simultaneous NOx direct decomposition (into N2 and O2) and CO oxidation can be achieved efficiently on CrO2 terminated PbTiO3, while circumventing oxygen (and sulfur) poisoning issues. One should note that NOx direct decomposition has been an open challenge in automotive emission control industry. Our method can expand the range of catalytically active elements to those which are not conventionally considered for catalysis and which are more economical, e.g., Cr (for NOx direct decomposition and CO oxidation) instead of canonical precious metal catalysts. Primary support from Toyota Motor Engineering and Manufacturing, North America, Inc.

  15. Non-local domain switching in ferroelectric nanostructures

    Science.gov (United States)

    Jeong, Seuri; Kim, Kwang-Eun; Yang, Chan-Ho

    Nanoscale ferroic materials have attracted considerable interest due to their novel properties including electronic, electromachanical and magnetoelectric properties. Until now, exotic ferroelectric structures have been described theoretically such as flux-closure domains, but experimental studies for ferroelectric multi-domains in nanostructures have been a lack of research due to their large domain wall energy. In this study, we realized the radial-quadrant domain structures using strain relaxation known as flexoelectricity. Moreover, we observed that local electric polarization switching can affect distant domain regions to minimize free energy. Our findings provide basic concepts to demonstrate and understand ferroelectric nano-scale multi-domain structures.

  16. Enhanced flexoelectric effect in a non-ferroelectric composite

    Science.gov (United States)

    Li, Yong; Shu, Longlong; Zhou, Yongcun; Guo, Jing; Xiang, Feng; He, Li; Wang, Hong

    2013-09-01

    Direct flexoelectric effect was investigated in a non-ferroelectric composite (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7/Ag (BZN/Ag) where the structure symmetry permits no macro-piezoelectricity. The flexoelectric coefficient of the BZN/Ag composite approaches 0.17 μC/m at room temperature. This value is 3-4 orders of magnitude higher than those of common dielectrics. Our research confirms the existence of flexoelectric effect in insulated non-ferroelectric materials except for ferroelectric relaxors.

  17. Piezoelectricity and Ferroelectricity in Amino Acid Glycine =

    Science.gov (United States)

    Seyedhosseini, Ensieh

    Bioorganic ferroelectrics and piezoelectrics are becoming increasingly important in view of their intrinsic compatibility with biological environment and biofunctionality combined with strong piezoelectric effect and switchable polarization at room temperature. Here we study piezoelectricity and ferroelectricity in the smallest amino acid glycine, representing a broad class of non-centrosymmetric amino acids. Glycine is one of the basic and important elements in biology, as it serves as a building block for proteins. Three polymorphic forms with different physical properties are possible in glycine (alpha, beta and gamma), Of special interest for various applications are non-centrosymmetric polymorphs: beta-glycine and gamma-glycine. The most useful beta-polymorph being ferroelectric took much less attention than the other due to its instability under ambient conditions. In this work, we could grow stable microcrystals of beta-glycine by the evaporation of aqueous solution on a (111)Pt/Ti/SiO2/Si substrate as a template. The effects of the solution concentration and Pt-assisted nucleation on the crystal growth and phase evolution were characterized by X-ray diffraction analysis and Raman spectroscopy. In addition, spin-coating technique was used for the fabrication of highly aligned nano-islands of beta-glycine with regular orientation of the crystallographic axes relative the underlying substrate (Pt). Further we study both as-grown and tip-induced domain structures and polarization switching in the beta-glycine molecular systems by Piezoresponse Force Microscopy (PFM) and compare the results with molecular modeling and computer simulations. We show that beta-glycine is indeed a room-temperature ferroelectric and polarization can be switched by applying a bias to non-polar cuts via a conducting tip of atomic force microscope (AFM). Dynamics of these in-plane domains is studied as a function of applied voltage and pulse duration. The domain shape is dictated by

  18. Ferroelectric domains in epitaxial PbTiO.sub.3./sub. films on LaAlO.sub.3./sub. substrate investigated by piezoresponse force microscopy and far-infrared reflectance

    Czech Academy of Sciences Publication Activity Database

    Simon, Elizabeth; Borodavka, Fedir; Gregora, Ivan; Nuzhnyy, Dmitry; Kamba, Stanislav; Hlinka, Jiří; Bartasyte, A.; Margueron, S.

    2011-01-01

    Roč. 110, č. 8 (2011), 084115/1-084115/6 ISSN 0021-8979 R&D Projects: GA ČR GD202/09/H041; GA AV ČR KAN301370701; GA ČR GAP204/10/0616 Grant - others:GA UK(CZ) SVV-2011-263303 Institutional research plan: CEZ:AV0Z10100520 Keywords : electric domain walls * epitaxial layers * ferroelectric ceramics * ferroelectric thin films * infrared spectra * lead compounds * MOCVD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.168, year: 2011

  19. Thickness-dependent a1/a2 domain evolution in ferroelectric PbTiO3 films

    International Nuclear Information System (INIS)

    Li, S.; Zhu, Y.L.; Tang, Y.L.; Liu, Y.; Zhang, S.R.; Wang, Y.J.; Ma, X.L.

    2017-01-01

    Ferroelectric a 1 /a 2 domain structure has great potentials in high dielectric capacitors and tunable microwave devices. Understanding its structure is crucial to better control the domain configurations for future applications. In this paper, PbTiO 3 thin films with variant thicknesses are deposited on (110)-oriented GdScO 3 substrates by Pulsed Laser Deposition (PLD) and investigated by using conventional transmission electron microscopy (TEM) and Cs-corrected Scanning TEM. Contrast analysis and electron diffractions reveal that PbTiO 3 films are domain oriented consisting of a 1 /a 2 and a/c domain structure. The a 1 /a 2 domains are found to distribute periodically and its width increases with increasing film thickness following square root rule. Cs-corrected STEM imaging demonstrates that the domain walls of a 1 /a 2 domain structure have the rotation characteristic of 90° ferroelastic domain wall. The interchange of a 1 /a 2 domains induces the formation of vertex domains composed of two 90° and one 180° domain walls. Strains are mainly concentrated on the domain walls. The formation of this complex domain configuration is discussed in terms of the effect of the misfit strain, film thickness and cooling rate. These results provide novel information about a 1 /a 2 domain structures and are expected to shed some light on modulating a 1 /a 2 ferroelectric domain patterns in the design of ferroelectric-based devices.

  20. Atomic layer deposition of environmentally benign SnTiO{sub x} as a potential ferroelectric material

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Siliang; Selvaraj, Sathees Kannan [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Choi, Yoon-Young; Hong, Seungbum [Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States); Nakhmanson, Serge M. [Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Department of Bioengineering and Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

    2016-01-15

    Inspired by the need to discover environmentally friendly, lead-free ferroelectric materials, here the authors report the atomic layer deposition of tin titanate (SnTiO{sub x}) aiming to obtain the theoretically predicted perovskite structure that possesses ferroelectricity. In order to establish the growth conditions and probe the film structure and ferroelectric behavior, the authors grew SnTiO{sub x} films on the commonly used Si(100) substrate. Thin films of SnTiO{sub x} have been successfully grown at a deposition temperature of 200 °C, with a Sn/Ti atomic layer deposition (ALD) cycle ratio of 2:3 and postdeposition heat treatments under different conditions. X-ray photoelectron spectroscopy revealed excellent composition tunability of ALD. X-ray diffraction spectra suggested anatase phase for all films annealed at 650 and 350 °C, with peak positions shifted toward lower 2-theta angles indicating enlarged unit cell volume. The film annealed in O{sub 2} at 350 °C exhibited piezoresponse amplitude and phase hysteresis loops, indicative of the existence of switchable polarization.

  1. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene ultrathin films

    Directory of Open Access Journals (Sweden)

    ChangLi Liu

    2016-05-01

    Full Text Available The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene (P(VDF-TrFE films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene:poly(styrene sulfonic (PEDOT-PSSH as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  2. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, ChangLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Wang, XueJun [Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237 (China); Zhang, XiuLi [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Du, XiaoLi [School of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620 (China); Xu, HaiSheng, E-mail: hsxu@ecust.edu.cn [Department of Physics, East China University of Science and Technology, Shanghai 200237 (China); Kunshan Hisense Electronics Co., Ltd., Kunshan, Jiangsu 215300 (China)

    2016-05-15

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

  3. Effect of SHI irradiation on NBT-BT ceramics: Transformation of relaxor ferroelectric to ferroelectric nature

    Energy Technology Data Exchange (ETDEWEB)

    Shanmuga Sundari, S. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Kumar, Binay [Crystal Lab, Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Asokan, K. [Inter University Accelerator Centre, New Delhi 110 067 (India); Dhanasekaran, R., E-mail: rdcgc@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer The NBT-BT ceramics at MPB were synthesized by conventional solid state reaction method. Black-Right-Pointing-Pointer The prepared ceramics were irradiated with 120 MeV Au{sup 9+} ions at different fluencies. Black-Right-Pointing-Pointer The grain size is increased after irradiation due to the increase of local lattice temperature. Black-Right-Pointing-Pointer As the fluence increases the relaxor nature of the material is transformed to the ferroelectric nature. - Abstract: The lead free NBT-BT ceramics prepared by conventional solid state reaction method were irradiated with 120 MeV Au{sup 9+} ions with different fluences. The structural, dielectric and piezoelectric studies were carried out before and after irradiation. The agglomeration and increase of grain size are observed in SEM analysis after the irradiation. The diffuse phase transition disappeared after high fluence of irradiation and the material becomes ferroelectric in nature. The piezoelectric properties were decreased due to the reduced stability of the ferroelectric domains after the irradiation.

  4. On the long-time behavior of ferroelectric systems

    Energy Technology Data Exchange (ETDEWEB)

    Greenberg, J. M.; MacCamy, R. C.; Coffman, C. V.

    2003-07-16

    In this note we investigate a new model for the behavior of ferroelectric materials. This model is analogous to one used in [1] to describe the dynamics of elastic materials which exhibit phase changes.

  5. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

    2017-05-03

    This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

  6. Ferroelectric molecular films for nanoscopic ultrahigh-density memories.

    Science.gov (United States)

    Matsushige, Kazumi; Yamada, Hirofumi

    2002-04-01

    The formation and visualization of nanometer-scale polarized domains in ultrathin ferroelectric molecular films by scanning-probe microscopy are described. These operations to the ferroelectric domains correspond to the "writing" and the "reading" process, respectively, for the data-storage application. In addition, nanometer-scale structures and the local electrical properties of the local domains, including the interface effect, are discussed. The achieved minimum diameter of the written ferroelectric domains was 30 nm. The size of the "recording" dot corresponds to the recording density of about 230 Gbit/in.(2). The "erasing" process by switching domains was also demonstrated. Furthermore, nanometer-scale ferroelectric domains using VDF oligomer molecular films were successfully formed, which has opened the way to the control of single molecular dipoles.

  7. Field-effect transistor memories based on ferroelectric polymers

    Science.gov (United States)

    Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

    2017-11-01

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

  8. Concurrent transition of ferroelectric and magnetic ordering near room temperature.

    Science.gov (United States)

    Ko, Kyung-Tae; Jung, Min Hwa; He, Qing; Lee, Jin Hong; Woo, Chang Su; Chu, Kanghyun; Seidel, Jan; Jeon, Byung-Gu; Oh, Yoon Seok; Kim, Kee Hoon; Liang, Wen-I; Chen, Hsiang-Jung; Chu, Ying-Hao; Jeong, Yoon Hee; Ramesh, Ramamoorthy; Park, Jae-Hoon; Yang, Chan-Ho

    2011-11-29

    Strong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic Néel temperature of the multiferroic compound BiFeO(3) is suppressed to around room temperature by heteroepitaxial misfit strain. Remarkably, the ferroelectric state undergoes a first-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our findings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.

  9. Photostriction and elasto-optic response in multiferroics and ferroelectrics from first principles

    Science.gov (United States)

    Yang, Yurong; Paillard, Charles; Xu, Bin; Bellaiche, L.

    2018-02-01

    The present work reviews a series of recent first-principles studies devoted to the description of the interaction of light and strain in ferroelectric and multiferroic materials. Specifically, the modelling schemes used in these works to describe the so-called photostriction and elasto-optic effects are presented, in addition to the results and analysis provided by these ab initio calculations. In particular, the large importance of the piezoelectric effect in the polar direction in the photostriction of ferroelectric materials is stressed. Similarly, the occurrence of low-symmetry phases in lead titanate thin films under tensile strain is demonstrated to result in large elasto-optic constants. In addition, first-principle calculations allow to gain microscopic knowledge of subtle effects, for instance in the case of photostriction, where the deformation potential effect in directions perpendicular to the polar axis is shown to be almost as significant as the piezoelectric effect. As a result, the numerical methods presented here could propel the design of efficient opto-mechanical devices.

  10. High-frequency electromechanical imaging of ferroelectrics in a liquid environment.

    Science.gov (United States)

    Balke, Nina; Jesse, Stephen; Chu, Ying-Hao; Kalinin, Sergei V

    2012-06-26

    The coupling between electrical and mechanical phenomena is a ubiquitous feature of many information and energy storage materials and devices. In addition to involvement in performance and degradation mechanisms, electromechanical effects underpin a broad spectrum of nanoscale imaging and spectroscopies including piezoresponse force and electrochemical strain microscopies. Traditionally, these studies are conducted under ambient conditions. However, applications related to imaging energy storage and electrophysiological phenomena require operation in a liquid phase and therefore the development of electromechanical probing techniques suitable to liquid environments. Due to the relative high conductivity of most liquids and liquid decomposition at low voltages, the transfer of characterization techniques from ambient to liquid is not straightforward. Here we present a detailed study of ferroelectric domain imaging and manipulation in thin film BiFeO(3) using piezoresponse force microscopy in liquid environments as model systems for electromechanical phenomena in general. We explore the use of contact resonance enhancement and the application of multifrequency excitation and detection principles to overcome the experimental problems introduced by a liquid environment. Understanding electromechanical sample characterization in liquid is a key aspect not only for ferroelectric oxides but also for biological and electrochemical sample systems.

  11. Model of two-dimensional electron gas formation at ferroelectric interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Aguado-Puente, P.; Bristowe, N. C.; Yin, B.; Shirasawa, R.; Ghosez, Philippe; Littlewood, P. B.; Artacho, Emilio

    2015-07-01

    The formation of a two-dimensional electron gas at oxide interfaces as a consequence of polar discontinuities has generated an enormous amount of activity due to the variety of interesting effects it gives rise to. Here, we study under what circumstances similar processes can also take place underneath ferroelectric thin films. We use a simple Landau model to demonstrate that in the absence of extrinsic screening mechanisms, a monodomain phase can be stabilized in ferroelectric films by means of an electronic reconstruction. Unlike in the LaAlO3/SrTiO3 heterostructure, the emergence with thickness of the free charge at the interface is discontinuous. This prediction is confirmed by performing first-principles simulations of free-standing slabs of PbTiO3. The model is also used to predict the response of the system to an applied electric field, demonstrating that the two-dimensional electron gas can be switched on and off discontinuously and in a nonvolatile fashion. Furthermore, the reversal of the polarization can be used to switch between a two-dimensional electron gas and a two-dimensional hole gas, which should, in principle, have very different transport properties. We discuss the possible formation of polarization domains and how such configuration competes with the spontaneous accumulation of free charge at the interfaces.

  12. Magnetic fingerprint of interfacial coupling between CoFe and nanoscale ferroelectric domain walls

    Science.gov (United States)

    Zhang, Qintong; Murray, Peyton; You, Lu; Wan, Caihua; Zhang, Xuan; Li, Wenjing; Khan, Usman; Wang, Junling; Liu, Kai; Han, Xiufeng

    2016-08-01

    Magnetoelectric coupling in ferromagnetic/multiferroic systems is often manifested in the exchange bias effect, which may have combined contributions from multiple sources, such as domain walls, chemical defects, or strain. In this study we magnetically "fingerprint" the coupling behavior of CoFe grown on epitaxial BiFeO3 (BFO) thin films by magnetometry and the first-order-reversal-curves (FORC). The contribution to exchange bias from 71°, 109° and charged ferroelectric domain walls (DWs) was elucidated by the FORC distribution. CoFe samples grown on BFO with 71° DWs only exhibit an enhancement of the coercivity, but little exchange bias. Samples grown on BFO with 109° DWs and mosaic DWs exhibit a much larger exchange bias, with the main enhancement attributed to 109° and charged DWs. Based on the Malozemoff random field model, a varying-anisotropy model is proposed to account for the exchange bias enhancement. This work sheds light on the relationship between the exchange bias effect of the CoFe/BFO heterointerface and the ferroelectric DWs, and provides a path for multiferroic device analysis and design.

  13. Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

    NARCIS (Netherlands)

    Nguyen, M. D.; Tiggelaar, R.; Aukes, Thomas; Rijnders, G.; Roelof, G.

    2017-01-01

    Piezoelectric lead-zirconate-Titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-Area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films.

  14. Differential geometric aspects of the theory of ferroelectricity

    International Nuclear Information System (INIS)

    Khosiainov, V.T.

    1988-11-01

    In connection with the problem of the ferroelectricity a differential formalism is developed as a tool to describe the fine electronic properties in solids. This includes the gauge invariant definition of the differentiation in k-space (position operator), the notion of holonomy group and characteristic gauge field in k-space of electron states. A variational principle and possible solutions of resulting field equations are discussed. A criterion for the appearance of the ferroelectricity is proposed. (author). 5 refs

  15. Investigation of ferroelectric effects in two sulfide deposits1

    Science.gov (United States)

    Corry, Charles E.

    1994-04-01

    Laboratory studies by different investigators using various techniques have expanded the number of known ferroelectric ore minerals to about twenty at present from the first discovery of makedonite (PbTiO 3) in 1950. These include such common ore minerals as bismuthinite (Bi 2S 3), cassiterite (SnO 2), chalcocite (Cu 2S), pyrrhotite (Fe 1- xS), and stibnite (Sb 2S 3). Two field investigations of sulfide ore bodies that contain known ferroelectric minerals were undertaken to investigate possible in-situ effects in these deposits. These deposits, at Mount Emmons (38°53'N, 107°03'W), Colorado, and Three R Canyon (31°28'N, 110°46'W) in the Patagonia Mountains, Arizona, demonstrate ferroelectric effects that include directional polarization and apparent resistivity, electrically-excited resonance, and lack of reciprocity. Other phenomena include history-dependent electrical behavior and inductive effects. Ferroelectrics polarize as a function of applied potential. It is much easier to generate a large potential than the high currents commonly used in IP surveys. Thus, in electrical surveys of deposits known, or suspected, to contain ferroelectric minerals it may be advantageous to maximize the applied potential. It may also be relatively easy to induce electrical resonance in these deposits that could provide an inexpensive reconnaissance technique. In IP and CR surveys, ferroelectric effects can mask the deposit since ϱa may approach zero in the polar direction, or chargeability may be undetectable. Phase relations will most likely be uninterpretable in CR surveys over such deposits. In CSAMT surveys, directional resonance effects may preclude depth interpretation. Frequency-dependent inductive and capacitive effects may be observed in CR and CSAMT surveys over deposits containing significant quantities of ferroelectric minerals. Ferroelectricity may also be useful in exploitation efforts for electrical beneficiation during ore processing.

  16. Tunability response in exponentially graded ferroelectrics: A TIM model approach

    Energy Technology Data Exchange (ETDEWEB)

    Vivas C, H., E-mail: hvivasc@unal.edu.co [Grupo de Propiedades Opticas de los Materiales, Departamento de Fisica, Bloque Y, Universidad Nacional de Colombia, Manizales A.A. 127 (Colombia); Jurado, J.F.; Vargas-Hernandez, C. [Grupo de Propiedades Opticas de los Materiales, Departamento de Fisica, Bloque Y, Universidad Nacional de Colombia, Manizales A.A. 127 (Colombia)

    2012-02-01

    Relative dielectric function response associate to a non-homogeneous layered ferroelectric system is calculated in the framework of the Mean Field Approximation (MFA) for the Transverse Ising Model (TIM). Analytical self-consistent expressions for the average polarization, dielectric susceptibility, and tunability percentage are outlined and solved for different configurations and sizes. It is found that exponentially graded ferroelectrics magnify the tunability response for stronger interlayer coupling and it reaches its saturation value for smaller intensities of the applied electric field.

  17. Electric Control of Spin Helicity in a Magnetic Ferroelectric

    International Nuclear Information System (INIS)

    Yamasaki, Y.; Goto, T.; Sagayama, H.; Matsuura, M.; Hirota, K.; Arima, T.; Tokura, Y.

    2007-01-01

    Magnetic ferroelectrics or multiferroics, which are currently extensively explored, may provide a good arena to realize a novel magnetoelectric function. Here we demonstrate the genuine electric control of the spiral magnetic structure in one such magnetic ferroelectric, TbMnO 3 . A spin-polarized neutron scattering experiment clearly shows that the spin helicity, clockwise or counterclockwise, is controlled by the direction of spontaneous polarization and hence by the polarity of the small electric field applied on cooling

  18. Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films

    Science.gov (United States)

    Song, Zhiwei; Li, Gang; Xiong, Ying; Cheng, Chuanpin; Zhang, Wanli; Tang, Minghua; Li, Zheng; He, Jiangheng

    2018-05-01

    A memory device with a Pt/SrBi2Ta2O9(SBT)/Pt(111) structure was shown to have excellent combined ferroelectricity and resistive switching properties, leading to higher multistate storage memory capacity in contrast to ferroelectric memory devices. In this device, SBT polycrystalline thin films with significant (115) orientation were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates using CVD (chemical vapor deposition) method. Measurement results of the electric properties exhibit reproducible and reliable ferroelectricity switching behavior and bipolar resistive switching effects (BRS) without an electroforming process. The ON/OFF ratio of the resistive switching was found to be about 103. Switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents are likely attributed to the Ohmic and space charge-limited current (SCLC) behavior, respectively. Moreover, the ferroelectricity and resistive switching effects were found to be mutually independent, and the four logic states were obtained by controlling the periodic sweeping voltage. This work holds great promise for nonvolatile multistate memory devices with high capacity and low cost.

  19. Structural and magneto-dielectric property of (1-x)SBT-xLSMO nanocomposite thin films

    International Nuclear Information System (INIS)

    Maity, Sarmistha; Bhattacharya, D.; Dhar, A.; Ray, S.K.

    2009-01-01

    Full text: In recent years, interest in multiferroic materials has been increasing due to their potential applications. As single-phase multiferroic materials have very low room temperature magnetoelectric coefficient, recent studies have been concentrated on the possibility of attaining a coupling between the two order parameters by designing composites with magnetostrictive and piezoelectric phases via stress mediation. Composite thin films with homogenous matrix, composition spread with terminal layers being ferromagnetic and ferroelectric, layer-by-layer growth, superlattices, as well as epitaxial growth of ferromagnetic and ferroelectric layers on suitable substrates are been currently considered. In the present work, a nanostructured composite thin film of strontium bismuth tantalate (SBT) (ferroelectric layer) and lanthanum strontium manganese oxide (LSMO) (ferromagnetic layer) were fabricated using pulsed laser deposition. Phase separated multiferroic thin films with thickness varying from 50nm to 150nm were deposited from composite target (1-x)SBT-xLSMO with x=0.2, 0.5, 0.8. Grazing angle X-ray diffraction study combined with photo electron spectroscopy with depth profiling was carried out to study the phase separation. Interface quality of the thin film on silicon substrate was studied by Rutherford backscattering spectroscopy. Influence of film thickness and composition (x) on the electrical property of film was examined using impedance spectroscopy. The composite films exhibited ferroelectric as well as ferromagnetic characteristics at room temperature. A small kink in the dielectric spectra near the Neel temperature of LSMO confirmed the magneto-electric effect in the nanocomposite films

  20. Fork gratings based on ferroelectric liquid crystals.

    Science.gov (United States)

    Ma, Y; Wei, B Y; Shi, L Y; Srivastava, A K; Chigrinov, V G; Kwok, H-S; Hu, W; Lu, Y Q

    2016-03-21

    In this article, we disclose a fork grating (FG) based on the photo-aligned ferroelectric liquid crystal (FLC). The Digital Micro-mirror Device based system is used as a dynamic photomask to generated different holograms. Because of controlled anchoring energy, the photo alignment process offers optimal conditions for the multi-domain FLC alignment. Two different electro-optical modes namely DIFF/TRANS and DIFF/OFF switchable modes have been proposed where the diffraction can be switched either to no diffraction or to a completely black state, respectively. The FLC FG shows high diffraction efficiency and fast response time of 50µs that is relatively faster than existing technologies. Thus, the FLC FG may pave a good foundation toward optical vertices generation and manipulation that could find applications in a variety of devices.

  1. Growth of ferroelectric oxide films on n-GaN/c-sapphire structures

    Science.gov (United States)

    Fuflyigin, V.; Osinsky, A.; Wang, F.; Vakhutinsky, P.; Norris, P.

    2000-03-01

    High-quality (Pb, La)(Ti, Zr)O3 films were grown on n-GaN. The film thickness ranged from 0.5 to 5 μm. The material was prepared by a chemical solution method with compositions of 8/65/35 and 0/52/48. The films grown on GaN buffered with a thin layer of indium in oxide were highly textured and exhibited excellent ferroelectric properties with Pr=20-26 μC/cm2. A large field-induced birefringence of 0.025 was measured in the film with a composition of 8/65/35 under a field strength of 2×105 V/cm.

  2. Millimeter-Wave Dielectric Properties of Single Crystal Ferroelectric and Dielectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    McCloy, John S.; Korolev, Konstantin A.; Li, Zijing; Afsar, Mohammed N.; Sundaram, S. K.

    2011-01-03

    Transmittance measurements on various single crystal ferroelectric materials over a broad millimeter-wave frequency range have been performed. Frequency dependence of the complex dielectric permittivity has been determined in the millimeter wave region for the first time. The measurements have been employed using a free-space quasi-optical millimeter-wave spectrometer equipped with a set of high power backward wave oscillators (BWOs) as sources of coherent radiation, tunable in the range from 30 - 120 GHz. The uncertainties and possible sources of instrumentation and measurement errors related to the free-space millimeter-wave technique are discussed. This work has demonstrated that precise MMW permittivities can be obtained even on small thin crystals using the BWO quasi-optical approach.

  3. Thermally-treated Pt-coated silicon AFM tips for wear resistance in ferroelectric data storage

    International Nuclear Information System (INIS)

    Bhushan, Bharat; Palacio, Manuel; Kwak, Kwang Joo

    2008-01-01

    In ferroelectric data storage, a conductive atomic force microscopy (AFM) probe with a noble metal coating is placed in contact with a lead zirconate titanate (PZT) film. The understanding and improvement of probe tip wear, particularly at high velocities, is needed for high data rate recording. A commercial Pt-coated silicon AFM probe was thermally treated in order to form platinum silicide at the near-surface. Nanoindentation, nanoscratch and wear experiments were performed to evaluate the mechanical properties and wear performance at high velocities. The thermally treated tip exhibited lower wear than the untreated tip. The tip wear mechanism is adhesive and abrasive wear with some evidence of impact wear. The enhancement in mechanical properties and wear resistance in the thermally treated film is attributed to silicide formation in the near-surface. Auger electron spectroscopy and electrical resistivity measurements confirm the formation of platinum silicide. This study advances the understanding of thin film nanoscale surface interactions

  4. Fully Printed Wearable Vital Sensor for Human Pulse Rate Monitoring using Ferroelectric Polymer.

    Science.gov (United States)

    Sekine, Tomohito; Sugano, Ryo; Tashiro, Tomoya; Sato, Jun; Takeda, Yasunori; Matsui, Hiroyuki; Kumaki, Daisuke; Domingues Dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2018-03-13

    The ability to monitor subtle changes in vital and arterial signals using flexible devices attached to the human skin can be valuable for the detection of various health conditions such as cardiovascular disease. Conventional Si device technologies are being utilised in traditional clinical systems; however, its fabrication is not easy owing to the difficulties in adapting to conventional processes. Here, we present the development of a fully printed, wearable, ferroelectric-polymer vital sensor for monitoring the human pulse wave/rate on the skin. This vital sensor is compact, thin, sufficiently flexible, and conforms to the skin while providing high pressure sensitivity, fast response time, superior operational stability, and excellent mechanical fatigue properties. Moreover, the vital sensor is connected to a communication amplifier circuit for monitoring the pulse waves with a wireless sensing system. This sensor system can realise the development of new healthcare devices for wearable sensor applications.

  5. Novel oxide buffer approach for GaN integration on Si(111) platform through Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} bi-layer

    Energy Technology Data Exchange (ETDEWEB)

    Tarnawska, Lidia

    2012-12-19

    topography of the films is characterized by scanning electron microscopy and chemical inter-diffusion is investigated by energy-dispersive X-ray spectroscopy. The nucleation processes of the GaN on Sc{sub 2}O{sub 3} buffer are followed in-situ by reflection high energy electron diffraction and the interface chemistry is analyzed by means of X-ray photoelectron spectroscopy. Results: It is found, that the Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer approach provides a template of high structural quality for GaN overgrowth. The bi-layer buffer plays a lattice match mediator role between GaN and Si and acts as a barrier against impurity diffusion. GaN grown on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) templates is single crystalline with a wurtzite structure and (0001) oriented. Due to the -8% lattice mismatch between GaN and Sc{sub 2}O{sub 3}, GaN growth proceeds by the nucleation of 3D islands. The size of the islands, coalescence time and the relaxation process depend on the GaN growth conditions and have a strong influence on the topography of closed layers, crystalline quality (defect density) as well as optical properties. The best GaN material parameters are obtained for the layers grown in Ga-rich regime when the Ga/N ratio is slightly higher than unity. The main three defects found in the um-thick GaN layers are (a) threading dislocation, with density in the order of 10{sup 10} cm{sup -2}, (b) stacking faults, resulting in cubic inclusions in the hexagonal matrix and (c) inversion domain boundaries causing Ga-polar regions in the mainly N-polar film. A theoretical GaN/Sc{sub 2}O{sub 3} interface model is discussed to explain these experimental findings. Despite the relatively large number of structural defects, photoluminescence shows sharp and strong donor-bound exciton transition and very low intensity yellow emission, which indicate that GaN layers grown on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) are promising for future optoelectronic applications. Outlook

  6. Pulsed Laser Deposition of BaTiO3 Thin Films on Different Substrates

    Directory of Open Access Journals (Sweden)

    Yaodong Yang

    2010-01-01

    Full Text Available We have studied the deposition of BaTiO3 (BTO thin films on various substrates. Three representative substrates were selected from different types of material systems: (i SrTiO3 single crystals as a typical oxide, (ii Si wafers as a semiconductor, and (iii Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

  7. High surface stability of magnetite on bi-layer Fe3O4/Fe/MgO(0 0 1) films under 1 MeV Kr+ ion irradiation

    Czech Academy of Sciences Publication Activity Database

    Kim-Ngan, N.-T.H.; Krupska, M.; Balogh, A.G.; Malinský, Petr; Macková, Anna

    2017-01-01

    Roč. 8, č. 4 (2017), č. článku 045005. E-ISSN 2043-6262 R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : nanoscience * thin film * surface and interface Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics

  8. A novel readout integrated circuit for ferroelectric FPA detector

    Science.gov (United States)

    Bai, Piji; Li, Lihua; Ji, Yulong; Zhang, Jia; Li, Min; Liang, Yan; Hu, Yanbo; Li, Songying

    2017-11-01

    Uncooled infrared detectors haves some advantages such as low cost light weight low power consumption, and superior reliability, compared with cryogenically cooled ones Ferroelectric uncooled focal plane array(FPA) are being developed for its AC response and its high reliability As a key part of the ferroelectric assembly the ROIC determines the performance of the assembly. A top-down design model for uncooled ferroelectric readout integrated circuit(ROIC) has been developed. Based on the optical thermal and electrical properties of the ferroelectric detector the RTIA readout integrated circuit is designed. The noise bandwidth of RTIA readout circuit has been developed and analyzed. A novel high gain amplifier, a high pass filter and a low pass filter circuits are designed on the ROIC. In order to improve the ferroelectric FPA package performance and decrease of package cost a temperature sensor is designed on the ROIC chip At last the novel RTIA ROIC is implemented on 0.6μm 2P3M CMOS silicon techniques. According to the experimental chip test results the temporal root mean square(RMS)noise voltage is about 1.4mV the sensitivity of the on chip temperature sensor is 0.6 mV/K from -40°C to 60°C the linearity performance of the ROIC chip is better than 99% Based on the 320×240 RTIA ROIC, a 320×240 infrared ferroelectric FPA is fabricated and tested. Test results shows that the 320×240 RTIA ROIC meets the demand of infrared ferroelectric FPA.

  9. Electrodeposition of CdTe thin films onto n-Si(1 0 0): nucleation and growth mechanisms

    International Nuclear Information System (INIS)

    Gomez, H.; Henriquez, R.; Schrebler, R.; Cordova, R.; Ramirez, D.; Riveros, G.; Dalchiele, E.A.

    2005-01-01

    The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1 0 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of -0.200 V to values comprised between -0.515 and -0.600 V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below -0.540 V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D) ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D) diff , both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions

  10. "Negative capacitance" in resistor-ferroelectric and ferroelectric-dielectric networks: Apparent or intrinsic?

    Science.gov (United States)

    Saha, Atanu K.; Datta, Suman; Gupta, Sumeet K.

    2018-03-01

    In this paper, we describe and analytically substantiate an alternate explanation for the negative capacitance (NC) effect in ferroelectrics (FE). We claim that the NC effect previously demonstrated in resistance-ferroelectric (R-FE) networks does not necessarily validate the existence of "S" shaped relation between polarization and voltage (according to Landau theory). In fact, the NC effect can be explained without invoking the "S"-shaped behavior of FE. We employ an analytical model for FE (Miller model) in which the steady state polarization strictly increases with the voltage across the FE and show that despite the inherent positive FE capacitance, reduction in FE voltage with the increase in its charge is possible in a R-FE network as well as in a ferroelectric-dielectric (FE-DE) stack. This can be attributed to a large increase in FE capacitance near the coercive voltage coupled with the polarization lag with respect to the electric field. Under certain conditions, these two factors yield transient NC effect. We analytically derive conditions for NC effect in R-FE and FE-DE networks. We couple our analysis with extensive simulations to explain the evolution of NC effect. We also compare the trends predicted by the aforementioned Miller model with Landau-Khalatnikov (L-K) model (static negative capacitance due to "S"-shape behaviour) and highlight the differences between the two approaches. First, with an increase in external resistance in the R-FE network, NC effect shows a non-monotonic behavior according to Miller model but increases according to L-K model. Second, with the increase in ramp-rate of applied voltage in the FE-DE stack, NC effect increases according to Miller model but decreases according to L-K model. These results unveil a possible way to experimentally validate the actual reason of NC effect in FE.

  11. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

    Science.gov (United States)

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Priya, Shashank

    2015-02-16

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10(6) s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

  12. Photoluminescence and ferroelectric properties of sol-gel-grown Eu-doped CaBi{sub 4}Ti{sub 4}O{sub 15} : Nd films

    Energy Technology Data Exchange (ETDEWEB)

    Wang Weichao; Zheng Haiwu; Liu Yuefeng; Li Zonghui; Zhang Ting; Zhang Weifeng [Key Laboratory of Photovoltaic Materials of Henan Province, Department of Physics, Institute of Physics for Microsystem, Henan University, Kaifeng 475004 (China)], E-mail: zhenghaiwu76@yahoo.com.cn, E-mail: wfzhang@henu.edu.cn

    2009-05-21

    Eu-doped CaBi{sub 4}Ti{sub 4}O{sub 15} : Nd (CBENT) ferroelectric thin films were prepared on Pt/Ti/SiO{sub 2}/Si substrates by a sol-gel method. The photoluminescence (PL) and ferroelectric properties of the films were investigated by using different annealing temperatures and concentrations of europium ions. All the CaBi{sub 3.75-x}Eu{sub x}Nd{sub 0.25}Ti{sub 4}O{sub 15} films have a polycrystalline bismuth-layered perovskite structure, and a morphotropic phase boundary (MPB) between orthorhombic and tetragonal phases was shown to exist. The PL intensity of the CBENT films is significantly dependent on annealing temperature and Eu concentration. The remanent polarization 2Pr values of the Eu-doped CaBi{sub 4}Ti{sub 4}O{sub 15} : Nd thin films reaches a maximum value of 30.7 {mu}C cm{sup -2} when x is 0.2. The PL and ferroelectric properties suggest that CBENT films can be considered as promising multifunctional materials.

  13. Photoluminescence and ferroelectric properties of sol-gel-grown Eu-doped CaBi4Ti4O15 : Nd films

    Science.gov (United States)

    Wang, Weichao; Zheng, Haiwu; Liu, Yuefeng; Li, Zonghui; Zhang, Ting; Zhang, Weifeng

    2009-05-01

    Eu-doped CaBi4Ti4O15 : Nd (CBENT) ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. The photoluminescence (PL) and ferroelectric properties of the films were investigated by using different annealing temperatures and concentrations of europium ions. All the CaBi3.75-xEuxNd0.25Ti4O15 films have a polycrystalline bismuth-layered perovskite structure, and a morphotropic phase boundary (MPB) between orthorhombic and tetragonal phases was shown to exist. The PL intensity of the CBENT films is significantly dependent on annealing temperature and Eu concentration. The remanent polarization 2Pr values of the Eu-doped CaBi4Ti4O15 : Nd thin films reaches a maximum value of 30.7 µC cm-2 when x is 0.2. The PL and ferroelectric properties suggest that CBENT films can be considered as promising multifunctional materials.

  14. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

    Science.gov (United States)

    Jiang, Jun; Bai, Zi Long; Chen, Zhi Hui; He, Long; Zhang, David Wei; Zhang, Qing Hua; Shi, Jin An; Park, Min Hyuk; Scott, James F.; Hwang, Cheol Seong; Jiang, An Quan

    2018-01-01

    Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.

  15. Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Kumaragurubaran, Somu [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044,Japan (Japan); Nagata, Takahiro, E-mail: NAGATA.Takahiro@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044,Japan (Japan); Tsunekawa, Yoshifumi; Takahashi, Kenichiro; Ri, Sung-Gi; Suzuki, Setsu [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044,Japan (Japan); Comet Inc., c/o National Institute for Materials Science, 1-1 Namiki, Tsukuba,Ibaraki 305-0044 (Japan); Chikyow, Toyohiro [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044,Japan (Japan)

    2015-10-01

    An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO{sub 3}–Bi(Mg{sub 2/3}Nb{sub 1/3})O{sub 3} (BT–BMN), has been realized on Nb:SrTiO{sub 3} substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT–BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75–400 °C temperature range with a low dielectric loss. This exemplifies BT–BMN as a dielectric for monolithically integrated capacitors that can function up to 400 °C, breaking the present 175 °C limit of bulky capacitors, in high-power high-temperature electronic devices. - Highlights: • We optimized epitaxial growth conditions of lead-free relaxor ferroelectrics. • (111) oriented BaTiO{sub 3}–Bi(Mg{sub 2/3}Nb{sub 1/3})O{sub 3} film was grown on Nb:SrTiO{sub 3} substrate epitaxially. • High-temperature annealed films showed high dielectric constant exceeding 400. • Dielectric constant stability below 10% was achieved in 75–400 °C temperature range.

  16. Organic non-volatile memories from ferroelectric phase separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

    2009-03-01

    Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

  17. Ferroelectric Nanoparticles in Liquid Crystals: Recent Progress and Current Challenges

    Science.gov (United States)

    Glushchenko, Anatoliy

    2017-01-01

    The dispersion of ferroelectric nanomaterials in liquid crystals has recently emerged as a promising way for the design of advanced and tunable electro-optical materials. The goal of this paper is a broad overview of the current technology, basic physical properties, and applications of ferroelectric nanoparticle/liquid crystal colloids. By compiling a great variety of experimental data and discussing it in the framework of existing theoretical models, both scientific and technological challenges of this rapidly developing field of liquid crystal nanoscience are identified. They can be broadly categorized into the following groups: (i) the control of the size, shape, and the ferroelectricity of nanoparticles; (ii) the production of a stable and aggregate-free dispersion of relatively small (~10 nm) ferroelectric nanoparticles in liquid crystals; (iii) the selection of liquid crystal materials the most suitable for the dispersion of nanoparticles; (iv) the choice of appropriate experimental procedures and control measurements to characterize liquid crystals doped with ferroelectric nanoparticles; and (v) the development and/or modification of theoretical and computational models to account for the complexity of the system under study. Possible ways to overcome the identified challenges along with future research directions are also discussed. PMID:29104276

  18. Hierarchical ferroelectric and ferrotoroidic polarizations coexistent in nano-metamaterials.

    Science.gov (United States)

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jie; Kitamura, Takayuki

    2015-10-01

    Tailoring materials to obtain unique, or significantly enhanced material properties through rationally designed structures rather than chemical constituents is principle of metamaterial concept, which leads to the realization of remarkable optical and mechanical properties. Inspired by the recent progress in electromagnetic and mechanical metamaterials, here we introduce the concept of ferroelectric nano-metamaterials, and demonstrate through an experiment in silico with hierarchical nanostructures of ferroelectrics using sophisticated real-space phase-field techniques. This new concept enables variety of unusual and complex yet controllable domain patterns to be achieved, where the coexistence between hierarchical ferroelectric and ferrotoroidic polarizations establishes a new benchmark for exploration of complexity in spontaneous polarization ordering. The concept opens a novel route to effectively tailor domain configurations through the control of internal structure, facilitating access to stabilization and control of complex domain patterns that provide high potential for novel functionalities. A key design parameter to achieve such complex patterns is explored based on the parity of junctions that connect constituent nanostructures. We further highlight the variety of additional functionalities that are potentially obtained from ferroelectric nano-metamaterials, and provide promising perspectives for novel multifunctional devices. This study proposes an entirely new discipline of ferroelectric nano-metamaterials, further driving advances in metamaterials research.

  19. Ferroelectric Nanoparticles in Liquid Crystals: Recent Progress and Current Challenges.

    Science.gov (United States)

    Garbovskiy, Yuriy; Glushchenko, Anatoliy

    2017-11-01

    The dispersion of ferroelectric nanomaterials in liquid crystals has recently emerged as a promising way for the design of advanced and tunable electro-optical materials. The goal of this paper is a broad overview of the current technology, basic physical properties, and applications of ferroelectric nanoparticle/liquid crystal colloids. By compiling a great variety of experimental data and discussing it in the framework of existing theoretical models, both scientific and technological challenges of this rapidly developing field of liquid crystal nanoscience are identified. They can be broadly categorized into the following groups: (i) the control of the size, shape, and the ferroelectricity of nanoparticles; (ii) the production of a stable and aggregate-free dispersion of relatively small (~10 nm) ferroelectric nanoparticles in liquid crystals; (iii) the selection of liquid crystal materials the most suitable for the dispersion of nanoparticles; (iv) the choice of appropriate experimental procedures and control measurements to characterize liquid crystals doped with ferroelectric nanoparticles; and (v) the development and/or modification of theoretical and computational models to account for the complexity of the system under study. Possible ways to overcome the identified challenges along with future research directions are also discussed.

  20. Hierarchical ferroelectric and ferrotoroidic polarizations coexistent in nano-metamaterials

    Science.gov (United States)

    Shimada, Takahiro; Lich, Le Van; Nagano, Koyo; Wang, Jie; Kitamura, Takayuki

    2015-10-01

    Tailoring materials to obtain unique, or significantly enhanced material properties through rationally designed structures rather than chemical constituents is principle of metamaterial concept, which leads to the realization of remarkable optical and mechanical properties. Inspired by the recent progress in electromagnetic and mechanical metamaterials, here we introduce the concept of ferroelectric nano-metamaterials, and demonstrate through an experiment in silico with hierarchical nanostructures of ferroelectrics using sophisticated real-space phase-field techniques. This new concept enables variety of unusual and complex yet controllable domain patterns to be achieved, where the coexistence between hierarchical ferroelectric and ferrotoroidic polarizations establishes a new benchmark for exploration of complexity in spontaneous polarization ordering. The concept opens a novel route to effectively tailor domain configurations through the control of internal structure, facilitating access to stabilization and control of complex domain patterns that provide high potential for novel functionalities. A key design parameter to achieve such complex patterns is explored based on the parity of junctions that connect constituent nanostructures. We further highlight the variety of additional functionalities that are potentially obtained from ferroelectric nano-metamaterials, and provide promising perspectives for novel multifunctional devices. This study proposes an entirely new discipline of ferroelectric nano-metamaterials, further driving advances in metamaterials research.

  1. Nanocomposites of ferroelectric polymers with surface-hydroxylated BaTiO 3 nanoparticles for energy storage applications

    KAUST Repository

    Almadhoun, Mahmoud Nassar Mahmoud

    2012-01-01

    A facile surface hydroxylation treatment using hydrogen peroxide to modify the surface of BaTiO 3 nanofillers dispersed in a ferroelectric copolymer host has been investigated. We demonstrate that the surface functionalization of the BaTiO 3 nanofillers (<100 nm) with hydroxyl groups results in as much as two orders of magnitude reduction in the leakage current of nanocomposite thin-film capacitors. This reduction is observed concurrently with the enhancement of the effective permittivity and breakdown strength of the thin-film nanocomposites. Surface modified BaTiO 3 particles display better dispersion within the polymer matrix, resulting in enhanced relative permittivity and reduced dielectric loss. The dielectric behavior of the nanocomposite films containing up to 30 vol.% BaTiO 3 agreed well with the Bruggeman model. These results demonstrate the potential of facile surface hydroxylation of nanoparticles towards the fabrication of higher energy-density nanocomposites. © 2012 The Royal Society of Chemistry.

  2. Emission from ferroelectric cathodes. Revision 1

    Energy Technology Data Exchange (ETDEWEB)

    Sampayan, S.E.; Caporaso, G.J.; Holmes, C.L.; Lauer, E.J.; Prosnitz, D.; Trimble, D.O.; Westenskow, G.A.

    1993-05-01

    The authors have recently initiated an investigation of electron emission from ferroelectric cathodes. The experimental apparatus consisted of an electron diode and a 250 kV, 12 ohm, 70 ns pulsed high voltage power source. A planar triode modulator driven by a synthesized waveform generator initiates the polarization inversion and allows inversion pulse tailoring. The pulsed high voltage power source is capable of delivering two high voltage pulses within 50 {mu}s of each other and is capable of operating at a sustained repetition rate of 5 Hz. The initial measurements indicate that emission current densities above the Child-Langmuir Space Charge Limit, J{sub CL}, are possible. They explain this effect to be based on a non-zero initial energy of the emitted electrons. They also determined that this effect is strongly coupled to relative timing between the inversion pulse and application of the main anode-cathode pulse. They also have initiated brightness measurements of the emitted beam and estimate a preliminary lower bound to be on the order of 10{sup 9} A/m{sup 2}-rad{sup 2} for currents close to J{sub CL} and factor of two less at currents over 4J{sub CL}. As in previous measurements at this Laboratory, they performed the measurement using a pepper pot technique. Beamlet profiles are recorded with a fast phosphor and gated cameras. They describe their apparatus and preliminary measurements.

  3. Polarization switching kinetics in ultrathin ferroelectric barium titanate film

    Energy Technology Data Exchange (ETDEWEB)

    Gaynutdinov, R., E-mail: rgaynutdinov@gmail.com [Institute of Crystallography, Russian Academy of Sciences, Moscow 119333 (Russian Federation); Minnekaev, M., E-mail: m.minnekaev@gmail.com [NRNU Moscow Engineering Physics Institute, Moscow 115409 (Russian Federation); Mitko, S., E-mail: sergey_m@ntmdt.ru [NT-MDT Co., Moscow 124482 (Russian Federation); Tolstikhina, A., E-mail: alla@ns.crys.ras.ru [Institute of Crystallography, Russian Academy of Sciences, Moscow 119333 (Russian Federation); Zenkevich, A., E-mail: avzenkevich@mephi.ru [NRNU Moscow Engineering Physics Institute, Moscow 115409 (Russian Federation); NRC Kurchatov Institute, Moscow 123182 (Russian Federation); Ducharme, S., E-mail: sducharme@unl.edu [Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, NE 68588-0299 (United States); Fridkin, V., E-mail: fridkin@ns.crys.ras.ru [Institute of Crystallography, Russian Academy of Sciences, Moscow 119333 (Russian Federation)

    2013-09-01

    The investigation of polarization switching kinetics in an ultrathin barium titanate film reveals true threshold switching at a large coercive electric field, evidence that switching is of intrinsic thermodynamic nature, rather than of extrinsic nature initiated by thermal nucleation, which has no true threshold field. The switching speed of a 7 nm thick epitaxial film exhibits a critical slowing as the threshold is approached from above, a key characteristic of intrinsic switching. In contrast, a bulk crystal exhibits nucleation-initiated switching, which has no threshold, and proceeds even at fields well below the nominal coercive field, which was determined independently from the polarization-electric field hysteresis loop. Previously, this phenomenon was only reported for ultrathin ferroelectric polymer Langmuir–Blodgett films. Since both the thermodynamic coercive field and the intrinsic switching kinetics are derived from the mean field theory of ferroelectricity, we expect that these phenomena will be found in other ferroelectric films at the nanoscale.

  4. Static negative capacitance of a ferroelectric nano-domain nucleus

    Science.gov (United States)

    Sluka, Tomas; Mokry, Pavel; Setter, Nava

    2017-10-01

    Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could be eliminated by placing a ferroelectric layer between the FET gate electrode and the channel, which effectively amplifies the gate voltage. The original idea of using a bulk ferroelectric negative capacitor suffers however from irreversible multi-domain ferroelectric switching, which does not allow us to stabilize static negative capacitance, while a recent reversible solution with super-lattices may be difficult to integrate onto FET. Here, we introduce a solution which provides static negative capacitance from a nano-domain nucleus. Phase-field simulations confirm the robustness of this concept, the conveniently achievable small effective negative capacitance and the potentially high compatibility of such a negative nano-capacitor with FET technology.

  5. Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

    Science.gov (United States)

    Ghittorelli, Matteo; Lenz, Thomas; Sharifi Dehsari, Hamed; Zhao, Dong; Asadi, Kamal; Blom, Paul W. M.; Kovács-Vajna, Zsolt M.; de Leeuw, Dago M.; Torricelli, Fabrizio

    2017-06-01

    Non-volatile memories--providing the information storage functionality--are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is not space charge limited. The proposed model explains and unifies a wide range of experiments, provides important design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm-2.

  6. Graphene Dirac point tuned by ferroelectric polarization field.

    Science.gov (United States)

    Wang, Xudong; Chen, Yan; Wu, Guangjian; Wang, Jianlu; Tian, Bobo; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Kang, Tingting; Tang, Minghua; Xiao, Yongguang; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

    2018-04-03

    Graphene has received numerous attention for future nanoelectronics and optoelectronics. The Dirac point is a key parameter of graphene that provides information about its carrier properties. There are lots of methods to tune the Dirac point of graphene, such as chemical doping, impurities, defects, and disorder. In this study, we report a different approach to tune the Dirac point of graphene using a ferroelectric polarization field. The Dirac point can be adjusted to near the ferroelectric coercive voltage regardless its original position. We have ensured this phenomenon by temperature-dependent experiments, and analyzed its mechanism with the theory of impurity correlation in graphene. Additionally, with the modulation of ferroelectric polymer, the current on/off ratio and mobility of graphene transistor both have been improved. This work provides an effective method to tune the Dirac point of graphene, which can be readily used to configure functional devices such as p-n junctions and inverters.

  7. Heterogeneous Ferroelectric Solid Solutions Phases and Domain States

    CERN Document Server

    Topolov, Vitaly

    2012-01-01

    The book deals with perovskite-type ferroelectric solid solutions for modern materials science and applications, solving problems of complicated heterophase/domain structures near the morphotropic phase boundary and applications to various systems with morphotropic phases. In this book domain state–interface diagrams are presented for the interpretation of heterophase states in perovskite-type ferroelectric solid solutions. It allows to describe the stress relief in the presence of polydomain phases, the behavior of unit-cell parameters of coexisting phases and the effect of external electric fields. The novelty of the book consists in (i) the first systematization of data about heterophase states and their evolution in ferroelectric solid solutions (ii) the general interpretation of heterophase and domain structures at changing temperature, composition or electric field (iii) the complete analysis of interconnection domain structures, unit-cell parameters changes, heterophase structures and stress relief.

  8. Equivalent circuit analysis of a PbS/ferroelectric heterostructure

    Science.gov (United States)

    Pintilie, L.; Pintilie, I.; Botila, T.; Petre, D.; Licea, I.

    1997-02-01

    The frequency characteristic of the transverse photoelectric signal of a three electroded PbS/ferroelectric heterostructure is analyzed in this paper. The ferroelectric material is a lead titanate-zirconate ceramic obtained by hot pressing. It was found that the frequency characteristic of this signal is similar to a high-pass filter and depends on the properties of the ferroelectric substrates on which the PbS film was deposited. An equivalent circuit was proposed comparing the studied heterostructure with a metal-oxide semiconductor (MOS) structure. The circuit elements were determined fitting the obtained formula for the output signal with the experimental data. Some of the circuit elements were determined experimentally using various measuring techniques. It was found that the experimentally determined values are close to the theoretically determined values. The studied heterostructure can be changed into a band-pass filter adding some external circuit elements such as resistors and capacitors.

  9. Controlling the spin-torque efficiency with ferroelectric barriers

    KAUST Repository

    Useinov, A.

    2015-02-11

    Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

  10. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Draginda, Yu. A. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  11. Graphene Dirac point tuned by ferroelectric polarization field

    Science.gov (United States)

    Wang, Xudong; Chen, Yan; Wu, Guangjian; Wang, Jianlu; Tian, Bobo; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Kang, Tingting; Tang, Minghua; Xiao, Yongguang; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

    2018-04-01

    Graphene has received numerous attention for future nanoelectronics and optoelectronics. The Dirac point is a key parameter of graphene that provides information about its carrier properties. There are lots of methods to tune the Dirac point of graphene, such as chemical doping, impurities, defects, and disorder. In this study, we report a different approach to tune the Dirac point of graphene using a ferroelectric polarization field. The Dirac point can be adjusted to near the ferroelectric coercive voltage regardless its original position. We have ensured this phenomenon by temperature-dependent experiments, and analyzed its mechanism with the theory of impurity correlation in graphene. Additionally, with the modulation of ferroelectric polymer, the current on/off ratio and mobility of graphene transistor both have been improved. This work provides an effective method to tune the Dirac point of graphene, which can be readily used to configure functional devices such as p-n junctions and inverters.

  12. Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2018-01-01

    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

  13. Ferroelectric smectic phase formed by achiral straight core mesogens.

    Science.gov (United States)

    Stannarius, Ralf; Li, Jianjun; Weissflog, Wolfgang

    2003-01-17

    We report electro-optic experiments in liquid crystalline freestanding films of achiral hockey stick shaped mesogens with a straight aromatic core. The material forms two smectic mesophases. In the higher temperature phase, a spontaneous polarization exists in the smectic layer plane and the films show polar switching in electric fields. It is the first example of a ferroelectric phase formed by nearly rodlike achiral mesogens. Mirror symmetry of the phase is spontaneously broken. We propose a molecular configuration similar to a synclinic ferroelectric (C(S)P(F)) high temperature phase and an anticlinic, probably antiferroelectric (C(A)P(A)) low temperature phase.

  14. Engineering ferroelectric tunnel junctions through potential profile shaping

    Directory of Open Access Journals (Sweden)

    S. Boyn

    2015-06-01

    Full Text Available We explore the influence of the top electrode materials (W, Co, Ni, Ir on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO3. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  15. Acoustic emission mechanism at switching of ferroelectric crystals

    International Nuclear Information System (INIS)

    Belov, V.V.; Morozova, G.P.; Serdobol'skaya, O.Yu.

    1986-01-01

    Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO

  16. Voltage tunability of thermal conductivity in ferroelectric materials

    Science.gov (United States)

    Ihlefeld, Jon; Hopkins, Patrick Edward

    2016-02-09

    A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

  17. Phase diagrams of ferroelectric nanocrystals strained by an elastic matrix

    Science.gov (United States)

    Nikitchenko, A. I.; Azovtsev, A. V.; Pertsev, N. A.

    2018-01-01

    Ferroelectric crystallites embedded into a dielectric matrix experience temperature-dependent elastic strains caused by differences in the thermal expansion of the crystallites and the matrix. Owing to the electrostriction, these lattice strains may affect polarization states of ferroelectric inclusions significantly, making them different from those of a stress-free bulk crystal. Here, using a nonlinear thermodynamic theory, we study the mechanical effect of elastic matrix on the phase states of embedded single-domain ferroelectric nanocrystals. Their equilibrium polarization states are determined by minimizing a special thermodynamic potential that describes the energetics of an ellipsoidal ferroelectric inclusion surrounded by a linear elastic medium. To demonstrate the stability ranges of such states for a given material combination, we construct a phase diagram, where the inclusion’s shape anisotropy and temperature are used as two parameters. The ‘shape-temperature’ phase diagrams are calculated numerically for PbTiO3 and BaTiO3 nanocrystals embedded into representative dielectric matrices generating tensile (silica glass) or compressive (potassium silicate glass) thermal stresses inside ferroelectric inclusions. The developed phase maps demonstrate that the joint effect of thermal stresses and matrix-induced elastic clamping of ferroelectric inclusions gives rise to several important features in the polarization behavior of PbTiO3 and BaTiO3 nanocrystals. In particular, the Curie temperature displays a nonmonotonic variation with the ellipsoid’s aspect ratio, being minimal for spherical inclusions. Furthermore, the diagrams show that the polarization orientation with respect to the ellipsoid’s symmetry axis is controlled by the shape anisotropy and the sign of thermal stresses. Under certain conditions, the mechanical inclusion-matrix interaction qualitatively alters the evolution of ferroelectric states on cooling, inducing a structural transition

  18. Ferroelectric phase transition in Ga2Te3 single crystals

    Science.gov (United States)

    Gamal, G. A.; Abdalrahman, M. M.; Ashraf, M. I.; Eman, H. J.

    2005-01-01

    Measurements of the electrical conductivity and Hall effect were carried out in a wide temperature range (200-500 K) for Ga2Te3 crystals. The crystals were grown in single crystalline form by making a modification of the travelling heater method technique. The measurements revealed unusual observations in the electric conductivity and Hall mobility indicating the presence of some type of phase transitions at about 430 K. So, ferroelectric behavior was examined for confirming the presence of second-order (ferroelectric) phase transition. An energy gap of 1.21 eV and depth of the impurity center of 0.11 eV were found.

  19. Enhanced flexoelectricity through residual ferroelectricity in barium strontium titanate

    International Nuclear Information System (INIS)

    Garten, Lauren M.; Trolier-McKinstry, Susan

    2015-01-01

    Residual ferroelectricity is observed in barium strontium titanate ceramics over 30 °C above the global phase transition temperature, in the same temperature range in which anomalously large flexoelectric coefficients are reported. The application of a strain gradient leads to strain gradient-induced poling or flexoelectric poling. This was observed by the development of a remanent polarization in flexoelectric measurements, an induced d 33 piezoelectric response even after the strain gradient was removed, and the production of an internal bias of 9 kV m −1 . It is concluded that residual ferroelectric response considerably enhances the observed flexoelectric response

  20. Enhanced flexoelectricity through residual ferroelectricity in barium strontium titanate

    Energy Technology Data Exchange (ETDEWEB)

    Garten, Lauren M., E-mail: lmg309@psu.edu; Trolier-McKinstry, Susan [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2015-03-07

    Residual ferroelectricity is observed in barium strontium titanate ceramics over 30 °C above the global phase transition temperature, in the same temperature range in which anomalously large flexoelectric coefficients are reported. The application of a strain gradient leads to strain gradient-induced poling or flexoelectric poling. This was observed by the development of a remanent polarization in flexoelectric measurements, an induced d{sub 33} piezoelectric response even after the strain gradient was removed, and the production of an internal bias of 9 kV m{sup −1}. It is concluded that residual ferroelectric response considerably enhances the observed flexoelectric response.

  1. Enhanced flexoelectricity through residual ferroelectricity in barium strontium titanate

    Science.gov (United States)

    Garten, Lauren M.; Trolier-McKinstry, Susan

    2015-03-01

    Residual ferroelectricity is observed in barium strontium titanate ceramics over 30 °C above the global phase transition temperature, in the same temperature range in which anomalously large flexoelectric coefficients are reported. The application of a strain gradient leads to strain gradient-induced poling or flexoelectric poling. This was observed by the development of a remanent polarization in flexoelectric measurements, an induced d33 piezoelectric response even after the strain gradient was removed, and the production of an internal bias of 9 kV m-1. It is concluded that residual ferroelectric response considerably enhances the observed flexoelectric response.

  2. Ferroelectric-antiferroelectric mixed systems. Equation of state, thermodynamic functions

    Directory of Open Access Journals (Sweden)

    N.A.Korynevskii

    2006-01-01

    Full Text Available The problem of equation of state for ferroelectric-antiferroelectric mixed systems in the whole region of a concentration change (0≤n≤1 is discussed. The main peculiarity of the presented model turns out to be the possibility for the site dipole momentum to be oriented ferroelectrically in z-direction and antiferroelectrically in x-direction. Such a situation takes place in mixed compounds of KDP type. The different phases (ferro-, antiferro-, paraelectric, dipole glass and some combinations of them have been found and analyzed.

  3. Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

    Science.gov (United States)

    Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.

    2010-01-01

    This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

  4. Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

    Science.gov (United States)

    Kim, Do-Kyung; Lee, Gyu-Jeong; Lee, Jae-Hyun; Kim, Min-Hoi; Bae, Jin-Hyuk

    2018-05-01

    We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on–off ratio and a low-voltage reading operation.

  5. An electrode-free method of characterizing the microwave dielectric properties of high-permittivity thin films

    Czech Academy of Sciences Publication Activity Database

    Bovtun, Viktor; Pashkov, V.; Kempa, Martin; Kamba, Stanislav; Eremenko, A.; Molchanov, V.; Poplavko, Y.; Yakymenko, Y.; Lee, J.H.; Schlom, D. G.

    2011-01-01

    Roč. 109, č. 2 (2011), 024106/1-024106/6 ISSN 0021-8979 R&D Projects: GA ČR(CZ) GA202/09/0682 Institutional research plan: CEZ:AV0Z10100520 Keywords : microwave characterization * ferroelectrics * thin film * dielectric resonator Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.168, year: 2011

  6. Large area deposition of Pb(Zr,Ti)O.sub.3./sub. thin films for piezoelectric MEMS

    Czech Academy of Sciences Publication Activity Database

    Suchaneck, G.; Vidyarthi, V.S.; Reibold, M.; Deyneka, Alexander; Jastrabík, Lubomír; Gerlach, G.; Hartung, J.

    2008-01-01

    Roč. 20, - (2008), s. 17-20 ISSN 1385-3449 Institutional research plan: CEZ:AV0Z10100522; CEZ:AV0Z10100521 Keywords : ferroelectric thin films * PZT * high resolution transmission electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.990, year: 2008

  7. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  8. Electric-field-induced weakly chaotic transients in ferroelectric liquid crystals.

    Science.gov (United States)

    Śliwa, I; Jeżewski, W; Kuczyński, W

    2016-01-01

    Nonlinear dynamics induced in surface stabilized ferroelectric liquid crystals by strong alternating external electric fields is studied both theoretically and experimentally. As has already been shown, molecular reorientations induced by sufficiently strong fields of high-enough frequencies can reveal a long transient behavior that has a weakly chaotic character. The resulting complex dynamics of ferroelectric liquid crystals can be considered not only as a consequence of irregular motions of particular molecules but also as a repercussion of a surface-enforced partial decorrelation of nonlinear molecular motions within smectic layers. To achieve more insight into the nature of this phenomenon and to show that the underlying complex field-induced behavior of smectic liquid crystals is not exceptional, ranges of system parameters for which the chaotic behavior occurs are determined. It is proved that there exists a large enough set of initial phase trajectory points, for which weakly chaotic long-time transitory phenomena occur, and, thereby, it is demonstrated that such a chaotic behavior can be regarded as being typical for strongly field-driven thin liquid crystal systems. Additionally, the influence of low-amplitude random noise on the duration of the transient processes is numerically studied. The strongly nonlinear contribution to the electro-optic response, experimentally determined for liquid crystal samples at frequencies lower than the actual field frequency, is also analyzed for long-time signal sequences. Using a statistical approach to distinguish numerically response signals of samples from noise generated by measuring devices, it is shown that the distribution of sample signals distinctly differs from the device noise. This evidently corroborates the occurrence of the nonlinear low-frequency effect, found earlier for different surface stabilized liquid crystal samples.

  9. Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-11-01

    Oxygen partial pressure (PO_2) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450nm ⟨001⟩ oriented epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated SrTiO3. Films deposited at 400mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5μC /cm2, respectively, which is ˜100% increase over the ones grown at 100mTorr. The dielectric constant linearly increases from 220 to 450 with increasing PO2. The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.

  10. Ferroelectric nanodomains in epitaxial PbTiO.sub.3./sub. films grown on SmScO.sub.3./sub. and TbScO.sub.3./sub. substrates

    Czech Academy of Sciences Publication Activity Database

    Borodavka, Fedir; Gregora, Ivan; Bartasyte, A.; Margueron, S.; Plausinaitiene, V.; Abrutis, A.; Hlinka, Jiří

    2013-01-01

    Roč. 113, č. 18 (2013), "187216-1"-"187216-7" ISSN 0021-8979 R&D Projects: GA ČR GD202/09/H041; GA ČR GAP204/10/0616 Grant - others:GA UK(CZ) SVV-2011-263303 Institutional support: RVO:68378271 Keywords : electric domains * epitaxial layers * ferroelectric thin films * lead compounds * MOCVD * phonons * Raman spectra * texture Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.185, year: 2013

  11. Dipole pinning effect on photovoltaic characteristics of ferroelectric BiFeO3 films

    Science.gov (United States)

    Biswas, P. P.; Thirmal, Ch.; Pal, S.; Murugavel, P.

    2018-01-01

    Ferroelectric bismuth ferrite is an attractive candidate for switchable devices. The effect of dipole pinning due to the oxygen vacancy layer on the switching behavior of the BiFeO3 thin film fabricated by the chemical solution deposition method was studied after annealing under air, O2, and N2 environment. The air annealed film showed well defined and dense grains leading to a lower leakage current and superior electrical properties compared to the other two films. The photovoltage and transient photocurrent measured under positive and negative poling elucidated the switching nature of the films. Though the air and O2 annealed films showed a switchable photovoltaic response, the response was severely affected by oxygen vacancies in the N2 annealed film. In addition, the open circuit voltage was found to be mostly dependent on the polarization of BiFeO3 rather than the Schottky barriers at the interface. This work provides an important insight into the effect of dipole pinning caused by oxygen vacancies on the switchable photovoltaic effect of BiFeO3 thin films along with the importance of stoichiometric, defect free, and phase pure samples to facilitate meaningful practical applications.

  12. Ising lines: natural topological defects within ferroelectric Bloch walls

    Czech Academy of Sciences Publication Activity Database

    Stepkova, Vilgelmina; Márton, Pavel; Hlinka, Jiří

    2015-01-01

    Roč. 92, č. 9 (2015), "094106-1"-"094106-5" ISSN 1098-0121 R&D Projects: GA ČR GA15-04121S Institutional support: RVO:68378271 Keywords : ferroelectrics * Ginzburg-Landau-Devonshire model * domain structure * topological defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  13. Nanocharacterization of the negative stiffness of ferroelectric materials

    Czech Academy of Sciences Publication Activity Database

    Skandani, A.A.; Čtvrtlík, Radim; Al-Haik, M.

    2014-01-01

    Roč. 105, č. 8 (2014), "082906-1"-"082906-5" ISSN 0003-6951 R&D Projects: GA TA ČR TA03010743 Institutional support: RVO:68378271 Keywords : ferroelectric materials * negative stiffness * thermomechanical environments Subject RIV: JJ - Other Materials Impact factor: 3.302, year: 2014

  14. Domain walls and ferroelectric reversal in corundum derivatives

    Science.gov (United States)

    Ye, Meng; Vanderbilt, David

    2017-01-01

    Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding of the static and dynamic properties of domain walls is of pressing interest. In this work, we use first-principles methods to study the structures of 180∘ domain walls, both in their relaxed state and along the ferroelectric reversal pathway, in ferroelectrics belonging to the family of corundum derivatives. Our calculations predict their orientation, formation energy, and migration energy and also identify important couplings between polarization, magnetization, and chirality at the domain walls. Finally, we point out a strong empirical correlation between the height of the domain-wall-mediated polarization reversal barrier and the local bonding environment of the mobile A cations as measured by bond-valence sums. Our results thus provide both theoretical and empirical guidance for future searches for ferroelectric candidates in materials of the corundum derivative family.

  15. Structure and dynamics of hexatic ferroelectric liquid crystals

    Czech Academy of Sciences Publication Activity Database

    Rychetský, Ivan; Glogarová, Milada; Novotná, Vladimíra

    2004-01-01

    Roč. 301, - (2004), s. 225-228 ISSN 0015-0193 R&D Projects: GA ČR GA202/03/0551; GA ČR GA202/02/0840 Institutional research plan: CEZ:AV0Z1010914 Keywords : hexatic phases * phase transition * ferroelectric Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.517, year: 2004

  16. Reversible spin texture in ferroelectric Hf O2

    Science.gov (United States)

    Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

    2017-06-01

    Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

  17. A comparative study regarding effects of interfacial ferroelectric ...

    Indian Academy of Sciences (India)

    A comparative study regarding effects of interfacial ferroelectric. Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structures. M YILDIRIM and M GÖKÇEN. ∗. Department of Physics, Faculty of Arts & Science, Düzce University, 81620 Düzce, Turkey. MS received 11 July 2012; revised 7 January 2013. Abstract.

  18. Operation of Ferroelectric Plasma Sources in a Gas Discharge Mode

    International Nuclear Information System (INIS)

    Dunaevsky, A.; Fisch, N.J.

    2004-01-01

    Ferroelectric plasma sources in vacuum are known as sources of ablative plasma, formed due to surface discharge. In this paper, observations of a gas discharge mode of operation of the ferroelectric plasma sources (FPS) are reported. The gas discharge appears at pressures between approximately 20 and approximately 80 Torr. At pressures of 1-20 Torr, there is a transition from vacuum surface discharge to the gas discharge, when both modes coexist and the surface discharges sustain the gas discharge. At pressures between 20 and 80 Torr, the surface discharges are suppressed, and FPS operate in pure gas discharge mode, with the formation of almost uniform plasma along the entire surface of the ceramics between strips. The density of the expanding plasma is estimated to be about 1013 cm-3 at a distance of 5.5 mm from the surface. The power consumption of the discharge is comparatively low, making it useful for various applications. This paper also presents direct measurements of the yield of secondary electron emission from ferroelectric ceramics, which, at low energies of primary electrons, is high and dependent on the polarization of the ferroelectric material

  19. Mechanism of negative ion emission from surfaces of ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Šroubek, Zdeněk

    2012-01-01

    Roč. 606, 15-16 (2012), s. 1327-1330 ISSN 0039-6028 Institutional support: RVO:67985882 Keywords : Surface of ferroelectrics * Ion emission Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.838, year: 2012 http://www.sciencedirect.com/science/article/pii/S0039602812001525#gts0005

  20. Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

    NARCIS (Netherlands)

    Ghittorelli, M.; Lenz, Thomas; Dehsari, H.S.; Zhao (赵冬), Dong; Asadi, Kamal; Blom, Paul W.M.; Kovács-Vajna, Z. M.; de Leeuw, D.M.; Torricelli, F.

    2017-01-01

    Non-volatile memories—providing the information storage functionality—are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory