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Sample records for ferroelectric antiferromagnetic bifeo

  1. Ferroelectric control of magnetization in BiFeO3/CoFe heterostructures.

    Science.gov (United States)

    Gajek, Martin; Martin, Lane; Heron, John; Seidel, Jan; Ramesh, Ramamoorthy

    2009-03-01

    The cross coupling between ferroic order parameters in multiferroics opens an alternative for the control of magnetism in magnetoelectric devices by purely electrical means. We first report on the exchange coupling between BiFeO3, an antiferromagnetic ferroelectric , and CoFe. We then show that the domain structure of the ferromagnet can be changed by poling the ferroelectric layer. Finally, we will discuss the implementation of our findings into possible device schemes.

  2. Specific features of nonlinear optical properties of Eu3+ doped BiFeO3 nanopowders near antiferromagnetic transition

    Science.gov (United States)

    El Bahraoui, T.; Sekkati, M.; Taibi, M.; Abd-Lefdil, M.; El-Naggar, A. M.; AlZayed, N. S.; Albassam, A. A.; Kityk, I. V.; Maciag, A.

    2016-01-01

    The monitoring of the Eu3+ doped BiFeO3 nanopowders was performed near the antiferromagnetic transformation by photoinduced optical second harmonic generation. As photoinduced laser beams we have used bicolor coherent excitations of the Er:glass laser emitting at 1540 nm with frequency repetition about 15 ns. The studies of the photoinduced SHG were performed versus temperature including the temperature range of ferromagnetic-ferroelectric transition (350 °C…390 °C). The optimal light polarization and intensity ratio were chosen; the sensitivity of the photoinduced SHG to the multiferroic phase transitions was explored.

  3. Rewritable ferroelectric vortex pairs in BiFeO3

    Science.gov (United States)

    Li, Yang; Jin, Yaming; Lu, Xiaomei; Yang, Jan-Chi; Chu, Ying-Hao; Huang, Fengzhen; Zhu, Jinsong; Cheong, Sang-Wook

    2017-08-01

    Ferroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices.

  4. Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

    Science.gov (United States)

    Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

    2013-06-25

    Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

  5. Ferroelectricity down to at least 2 nm in multiferroic BiFeO3 epitaxial thin films

    International Nuclear Information System (INIS)

    Bea, H.; Fusil, S.; Bouzehouane, K.; Sirena, M.; Herranz, G.; Jacquet, E.; Contour, J.-P.; Barthelemy, A.; Bibes, M.

    2006-01-01

    We report here on the preservation of ferroelectricity down to 2 nm in BiFeO 3 ultrathin films. The electric polarization can be switched reversibly and is stable over several days. Our findings insight on the fundamental problem of ferroelectricity at low thickness and confirm the potential of BiFeO 3 as a lead-free ferroelectric and multiferroic material for nanoscale devices. (author)

  6. Local Weak Ferromagnetism in Single-Crystalline Ferroelectric BiFeO3

    DEFF Research Database (Denmark)

    Ramazanoglu, M.; Laver, Mark; Ratcliff, W.

    2011-01-01

    Polarized small-angle neutron scattering studies of single-crystalline multiferroic BiFeO3 reveal a long-wavelength spin density wave generated by ∼1° spin canting of the spins out of the rotation plane of the antiferromagnetic cycloidal order. This signifies weak ferromagnetism within mesoscopic...

  7. Ferroelectric and magnetic properties in high-pressure synthesized BiFeO3 compound

    International Nuclear Information System (INIS)

    Zhai, L.; Shi, Y.G.; Gao, J.L.; Tang, S.L.; Du, Y.W.

    2011-01-01

    Highlights: → A high-density polycrystalline BiFeO 3 compound was synthesized by high-pressure annealing method. → The sample showed weak ferromagnetic at room temperature, which could be attributed to the lattice distortion induced by the high-pressure annealing. → Irregular domains were observed on the surface of the sample by piezoresponse force microscopy, and a typical hysteresis loop was obtained. - Abstract: High-density polycrystalline BiFeO 3 compound was synthesized by high-pressure annealing. Measurements of crystal structure, magnetic, and ferroelectric properties were made on the sample. It was found that the sample was almost single phase with a distorted R3c structure. The results of the X-ray photoelectron spectra demonstrate that the oxidation state of Fe in the sample is Fe 3+ . The room-temperature field dependence of magnetization for BiFeO 3 exhibits a hysteretic behavior. The observed weak ferromagnetism could be ascribed to the lattice distortion induced by the high-pressure annealing. In addition, the local ferroelectric performance of the sample was studied by piezoresponse force microscopy.

  8. Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, Rama K [ORNL; Bogle, K A [University of New South Wales, Sydney, Australia; Kumar, Amit [ORNL; Jesse, Stephen [ORNL; Magaraggia, R [University of Glasgow; Stamps, R [University of Glasgow; Ogale, S [National Chemical Laboratory, India; Potdar, H S [National Chemical Laboratory, India

    2011-01-01

    Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of 1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

  9. Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

    Science.gov (United States)

    Vasudevan, R. K.; Bogle, K. A.; Kumar, A.; Jesse, S.; Magaraggia, R.; Stamps, R.; Ogale, S. B.; Potdar, H. S.; Nagarajan, V.

    2011-12-01

    Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1-xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of ˜1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

  10. Dipole pinning effect on photovoltaic characteristics of ferroelectric BiFeO3 films

    Science.gov (United States)

    Biswas, P. P.; Thirmal, Ch.; Pal, S.; Murugavel, P.

    2018-01-01

    Ferroelectric bismuth ferrite is an attractive candidate for switchable devices. The effect of dipole pinning due to the oxygen vacancy layer on the switching behavior of the BiFeO3 thin film fabricated by the chemical solution deposition method was studied after annealing under air, O2, and N2 environment. The air annealed film showed well defined and dense grains leading to a lower leakage current and superior electrical properties compared to the other two films. The photovoltage and transient photocurrent measured under positive and negative poling elucidated the switching nature of the films. Though the air and O2 annealed films showed a switchable photovoltaic response, the response was severely affected by oxygen vacancies in the N2 annealed film. In addition, the open circuit voltage was found to be mostly dependent on the polarization of BiFeO3 rather than the Schottky barriers at the interface. This work provides an important insight into the effect of dipole pinning caused by oxygen vacancies on the switchable photovoltaic effect of BiFeO3 thin films along with the importance of stoichiometric, defect free, and phase pure samples to facilitate meaningful practical applications.

  11. Effect of strain on voltage-controlled magnetism in BiFeO3-based heterostructures

    Science.gov (United States)

    Wang, J. J.; Hu, J. M.; Yang, T. N.; Feng, M.; Zhang, J. X.; Chen, L. Q.; Nan, C. W.

    2014-01-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures. PMID:24686503

  12. Enhancement of magnetic and ferroelectric properties of BiFeO3 by Er and transition element (Mn, Co) co-doping

    International Nuclear Information System (INIS)

    Han, Yumin; Mao, Weiwei; Quan, Chuye; Wang, Xingfu; Yang, Jianping; Yang, Tao; Li, Xing’ao

    2014-01-01

    Highlights: • BiFeO 3 , Bi 0.8 Er 0.2 FeO 3 , Bi 0.8 Er 0.2 Fe 0.9 Mn 0.1 O 3 and Bi 0.8 Er 0.2 Fe 0.9 Co 0.1 O 3 nanoparticles were prepared by sol–gel method. • The introduction of Er and Mn, Co into BiFeO 3 leads into a phase transition with reduced grain size. • The phase transformation combined with size reduction has significantly increased saturated polarization (Ps), remanent polarization (Pr) and saturated magnetization (Ms), remanent magnetization (Mr) behaviors of the doped samples with the same variation trend. • The formation of dipolar defect complexes (DDCs) in the doped samples may also contribute to the improved ferroelectric property. • Bi 0.8 Er 0.2 Fe 0.9 Mn 0.1 O 3 exhibits significantly improved ferroelectric and ferromagnetic properties. - Abstract: BiFeO 3 (BFO), Bi 0.8 Er 0.2 FeO 3 (BEFO), Bi 0.8 Er 0.2 Fe 0.9 Mn 0.1 O 3 (BEFMO) and Bi 0.8 Er 0.2 Fe 0.9 Co 0.1 O 3 (BEFCO) nanoparticles were prepared by sol–gel method having an average size of 200 nm for BFO, under100 nm for BEFO and under 60 nm for BEFMO and BEFCO. Phase transition from a rhombohedral symmetry (R3c) for BFO to an orthorhombic symmetry (Ibmm) for BEFO, BEFMO and BEFCO has been observed. The phase transformation combined with size reduction has significantly improved both ferroelectric and ferromagnetic behaviors of the doped samples in a similar way. The formation of dipolar defect complexes (DDCs) in the doped samples also contributes to the improved ferroelectric property with saturated polarization (Ps) of 0.375 μC/cm 2 and remanent polarization (Pr) of 0.244 μC/cm 2 for BEFMO. Size effect may also impact the simultaneously developed Pr for BEFMO and BEFCO. Owning to the interactions between the ferromagnetic and antiferromagnetic microdomains, improved saturated magnetization (Ms) and remanent magnetization (Mr) are also observed in BEFMO

  13. Ferroelectric domain switching dynamics and memristive behaviors in BiFeO3-based magnetoelectric heterojunctions

    Science.gov (United States)

    Huang, Weichuan; Liu, Yukuai; Luo, Zhen; Hou, Chuangming; Zhao, Wenbo; Yin, Yuewei; Li, Xiaoguang

    2018-06-01

    The ferroelectric domain reversal dynamics and the corresponding resistance switching as well as the memristive behaviors in epitaxial BiFeO3 (BFO, ~150 nm) based multiferroic heterojunctions were systematically investigated. The ferroelectric domain reversal dynamics could be described by the nucleation-limited-switching model with the Lorentzian distribution of logarithmic domain-switching times. By engineering the domain states, multi and even continuously tunable resistances states, i.e. memristive states, could be non-volatilely achieved. The resistance switching speed can be as fast as 30 ns in the BFO-based multiferroic heterojunctions with a write voltage of ~20 V. By reducing the thickness of BFO, the La0.6Sr0.4MnO3/BFO (~5 nm)/La0.6Sr0.4MnO3 multiferroic tunnel junction (MFTJ) shows an even a quicker switching speed (20 ns) with a much lower operation voltage (~4 V). Importantly, the MFTJ exhibits a tunable interfacial magnetoelectric coupling related to the ferroelectric domain switching dynamics. These findings enrich the potential applications of multiferroic BFO based devices in high-speed, low-power, and high-density memories as well as future neuromorphic computational architectures.

  14. Observation of room temperature saturated ferroelectric polarization in Dy substituted BiFeO3 ceramics

    KAUST Repository

    Zhang, Shuxia

    2012-04-06

    High quality Bi1− x Dy x FeO3 (0 ≤ x ≤ 0.15) ceramics have been fabricated by sintering Dy-doped BiFeO3 (BFO) precursor powders at a low temperature of 780 °C. The magnetic properties of BFO were improved by the introduction of Dy on the Bi-site. More importantly, well saturated ferroelectric hysteresis loops and polarization switching currents have been observed at room temperature. A large remnant polarization (2P r) value of 62 μC/cm2 is achieved, which is the highest value reported so far for rare-earth-doped BFO ceramics. Moreover, mechanisms for improved multiferroic properties depending on chemical doping-caused structure evolutions have also been discussed.

  15. Observation of room temperature saturated ferroelectric polarization in Dy substituted BiFeO3 ceramics

    KAUST Repository

    Zhang, Shuxia; Wang, Lei; Chen, Yao; Wang, Dongliang; Yao, Yingbang; Ma, Yanwei

    2012-01-01

    High quality Bi1− x Dy x FeO3 (0 ≤ x ≤ 0.15) ceramics have been fabricated by sintering Dy-doped BiFeO3 (BFO) precursor powders at a low temperature of 780 °C. The magnetic properties of BFO were improved by the introduction of Dy on the Bi-site. More importantly, well saturated ferroelectric hysteresis loops and polarization switching currents have been observed at room temperature. A large remnant polarization (2P r) value of 62 μC/cm2 is achieved, which is the highest value reported so far for rare-earth-doped BFO ceramics. Moreover, mechanisms for improved multiferroic properties depending on chemical doping-caused structure evolutions have also been discussed.

  16. Effect of surface modification of BiFeO3 on the dielectric, ferroelectric, magneto-dielectric properties of polyvinylacetate/BiFeO3 nanocomposites

    Directory of Open Access Journals (Sweden)

    O. P. Bajpai

    2014-09-01

    Full Text Available Bismuth ferrite (BiFeO3 is considered as one of the most promising materials in the field of multiferroics. In this work, a simple green route as well as synthetic routes has been used for the preparation of pure phase BiFeO3. An extract of Calotropis Gigantea flower was used as a reaction medium in green route. In each case so formed BiFeO3 particles are of comparable quality. These particles are in the range of 50–60 nm and exhibit mixed morphology (viz., spherical and cubic as confirmed by TEM analysis. These pure phase BiFeO3 nanoparticles were first time surface modified effectively by mean of two silylating agent’s viz., tetraethyl orthosilicate (TEOS and (3-Aminopropyltriethoxysilane (APTES. Modified and unmodified BiFeO3 nanoparticles were efficiently introduced into polyvinylacetate (PVAc matrix. It has been shown that nanocomposite prepared by modified BiFeO3 comprise superior dispersion characteristics, improved ferroelectric properties and favorable magneto-dielectric properties along with excellent wettability in compare to nanocomposite prepared by unmodified BiFeO3. These preliminary results demonstrate possible applications of this type of nanocomposites particularly in the field of multiferroic coating and adhesives.

  17. Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

    Science.gov (United States)

    Young, T.; Sharma, P.; Kim, D. H.; Ha, Thai Duy; Juang, Jenh-Yih; Chu, Y.-H.; Seidel, J.; Nagarajan, V.; Yasui, S.; Itoh, M.; Sando, D.

    2018-02-01

    We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ˜50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T') phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T' phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T'-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

  18. Room-temperature saturated ferroelectric polarization in BiFeO3 ceramics synthesized by rapid liquid phase sintering

    International Nuclear Information System (INIS)

    Wang, Y.P.; Zhou, L.; Zhang, M.F.; Chen, X.Y.; Liu, J.-M.; Liu, Z.G.

    2004-01-01

    Single-phased ferroelectromagnet BiFeO 3 ceramics with high resistivity were synthesized by a rapid liquid phase sintering technique. Saturated ferroelectric hysteresis loops were observed at room temperature in the ceramics sintered at 880 deg. C for 450 s. The spontaneous polarization, remnant polarization, and the coercive field are 8.9 μC/cm 2 , 4.0 μC/cm 2 , and 39 kV/cm, respectively, under an applied field of 100 kV/cm. It is proposed that the formation of Fe 2+ and an oxygen deficiency leading to the higher leakage can be greatly suppressed by the very high heating rate, short sintering period, and liquid phase sintering technique. The latter was also found effective in increasing the density of the ceramics. The sintering technique developed in this work is expected to be useful in synthesizing other ceramics from multivalent or volatile starting materials

  19. Magnetic structure driven ferroelectricity and large magnetoelectric coupling in antiferromagnet Co4Nb2O9

    Science.gov (United States)

    Srivastava, P.; Chaudhary, S.; Maurya, V.; Saha, J.; Kaushik, S. D.; Siruguri, V.; Patnaik, S.

    2018-05-01

    Synthesis and extensive structural, pyroelectric, magnetic, dielectric and magneto-electric characterizations are reported for polycrystalline Co4Nb2O9 towards unraveling the multiferroic ground state. Magnetic measurements confirm that Co4Nb2O9 becomes an anti-ferromagnet at around 28 K. Associated with the magnetic phase transition, a sharp peak in pyroelectric current indicates the appearance of strong magneto-electric coupling below Neel temperature (TN) along with large coupling constant upto 17.8 μC/m2T. Using temperature oscillation technique, we establish Co4Nb2O9 to be a genuine multiferroic with spontaneous electric polarization in the anti-ferromagnetic state in the absence of magnetic field poling. This is in agreement with our low temperature neutron diffraction studies that show the magnetic structure of Co4Nb2O9 to be that of a non-collinear anti-ferromagnet with ferroelectric ground state.

  20. BiFeO3 epitaxial thin films and devices: past, present and future

    Science.gov (United States)

    Sando, D.; Barthélémy, A.; Bibes, M.

    2014-11-01

    The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

  1. Ferroelectric BiFeO3as an Oxide Dye in Highly Tunable Mesoporous All-Oxide Photovoltaic Heterojunctions

    KAUST Repository

    Wang, Lingfei

    2016-10-12

    As potential photovoltaic materials, transition-metal oxides such as BiFeO3 (BFO) are capable of absorbing a substantial portion of solar light and incorporating ferroic orders into solar cells with enhanced performance. But the photovoltaic application of BFO has been hindered by low energy-conversion efficiency due to poor carrier transport and collection. In this work, a new approach of utilizing BFO as a light-absorbing sensitizer is developed to interface with charge-transporting TiO2 nanoparticles. This mesoporous all-oxide architecture, similar to that of dye-sensitized solar cells, can effectively facilitate the extraction of photocarriers. Under the standard AM1.5 (100 mW cm−2) irradiation, the optimized cell shows an open-circuit voltage of 0.67 V, which can be enhanced to 1.0 V by tailoring the bias history. A fill factor of 55% is achieved, which is much higher than those in previous reports on BFO-based photovoltaic devices. The results provide here a new viable approach toward developing highly tunable and stable photovoltaic devices based on ferroelectric transition-metal oxides.

  2. Ferroelectric BiFeO3 as an Oxide Dye in Highly Tunable Mesoporous All-Oxide Photovoltaic Heterojunctions.

    Science.gov (United States)

    Wang, Lingfei; Ma, He; Chang, Lei; Ma, Chun; Yuan, Guoliang; Wang, Junling; Wu, Tom

    2017-01-01

    As potential photovoltaic materials, transition-metal oxides such as BiFeO 3 (BFO) are capable of absorbing a substantial portion of solar light and incorporating ferroic orders into solar cells with enhanced performance. But the photovoltaic application of BFO has been hindered by low energy-conversion efficiency due to poor carrier transport and collection. In this work, a new approach of utilizing BFO as a light-absorbing sensitizer is developed to interface with charge-transporting TiO 2 nanoparticles. This mesoporous all-oxide architecture, similar to that of dye-sensitized solar cells, can effectively facilitate the extraction of photocarriers. Under the standard AM1.5 (100 mW cm -2 ) irradiation, the optimized cell shows an open-circuit voltage of 0.67 V, which can be enhanced to 1.0 V by tailoring the bias history. A fill factor of 55% is achieved, which is much higher than those in previous reports on BFO-based photovoltaic devices. The results provide here a new viable approach toward developing highly tunable and stable photovoltaic devices based on ferroelectric transition-metal oxides. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Mn55 NMR investigation of the correlation between antiferromagnetism and ferroelectricity in TbMn2O5

    Science.gov (United States)

    Baek, S.-H.; Reyes, A. P.; Hoch, M. J. R.; Moulton, W. G.; Kuhns, P. L.; Harter, A. G.; Hur, N.; Cheong, S.-W.

    2006-10-01

    The correlation between antiferromagnetism and ferroelectricity in magnetoelectric multiferroic TbMn2O5 has been investigated by zero-field Mn55 NMR. Antiferromagnetic transition near 40K is found to be first order. When an external field up to 7T is applied along the easy a axis, a dramatic change in the signal intensity is observed which is hysteretic in nature. Such effects are absent for H along the b and c axes. The observed field-induced signal enhancement is attributed to antiferromagnetic domain walls which are strongly coupled to ferroelectric domain walls. Experimental data suggest that this may be related to the field-induced ferromagnetic ordering of the Tb ion.

  4. Ferroelectric BiFeO3as an Oxide Dye in Highly Tunable Mesoporous All-Oxide Photovoltaic Heterojunctions

    KAUST Repository

    Wang, Lingfei; Ma, He; Chang, Lei; Ma, Chun; Yuan, Guoliang; Wang, Junling; Wu, Tao

    2016-01-01

    As potential photovoltaic materials, transition-metal oxides such as BiFeO3 (BFO) are capable of absorbing a substantial portion of solar light and incorporating ferroic orders into solar cells with enhanced performance. But the photovoltaic

  5. Coexistence of room temperature ferroelectricity and ferrimagnetism in multiferroic BiFeO3-Bi0.5Na0.5TiO3 solid solution

    International Nuclear Information System (INIS)

    Tian, Z.M.; Wang, C.H.; Yuan, S.L.; Wu, M.S.; Ma, Z.Z.; Duan, H.N.; Chen, L.

    2011-01-01

    Highlights: → In this study, the coexistence of ferroelectrics and ferrimagnetism have been observed at room temperature for the (1 - x)BiFeO 3 -xBi 0.5 Na 0.5 TiO 3 (x = 0.37) solid solutions. → X-ray diffraction and Raman spectroscopy measurements show a single-phase perovskite structure with no impurities identified. → A magnetic transition from paramagnetic (PM) to ferrimagnetic (Ferri) ordering is observed for the solution with Curie temperature T C ∼ 330 K. - Abstract: The structure, ferroelectric and magnetic properties of (1 - x)BiFeO 3 -xBi 0.5 Na 0.5 TiO 3 (x = 0.37) solid solution fabricated by a sol-gel method have been investigated. X-ray diffraction and Raman spectroscopy measurements show a single-phase perovskite structure with no impurities identified. Compared with pure BiFeO 3 , the coexistence of ferroelectricity and ferrimagnetism have been observed at room temperature for the solution with remnant polarization P r = 1.41 μC/cm 2 and remnant magnetization M r = 0.054 emu/g. Importantly, a magnetic transition from ferrimagnetic (FM) ordering to paramagnetic (PM) state is observed, with Curie temperature T C ∼ 330 K, being explained in terms of the suppression of cycloid spin configuration by the structural distortion.

  6. Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films

    International Nuclear Information System (INIS)

    Guo Yiping; Guo Bing; Dong Wen; Li Hua; Liu Hezhou

    2013-01-01

    The diode and photovoltaic effects of BiFeO 3 and Bi 0.9 Sr 0.1 FeO 3−δ polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi 0.9 Sr 0.1 FeO 3−δ thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO 3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities. (paper)

  7. Electric-field switchable magnetization via the Dzyaloshinskii-Moriya interaction: FeTiO3 versus BiFeO3

    International Nuclear Information System (INIS)

    Ederer, Claude; Fennie, Craig J

    2008-01-01

    In this paper we review and discuss a mechanism for coupling between electric polarization and magnetization that can ultimately lead to electric-field switchable magnetization. The basic idea is that a ferroelectric distortion in an antiferromagnetic material can 'switch on' the Dzyaloshinskii-Moriya interaction which leads to a canting of the antiferromagnetic sublattice magnetizations, and thus to a net magnetization. This magnetization M-vector is coupled to the polarization P-vector via a trilinear free energy contribution of the form P-vector·(M-vectorxxL-vector), where L-vector is the antiferromagnetic order parameter. In particular, we discuss why such an invariant is present in R3c FeTiO 3 but not in the isostructural multiferroic BiFeO 3 . Finally, we construct symmetry groups that in general allow for this kind of ferroelectrically-induced weak ferromagnetism.

  8. Relation between ferroelectric and antiferromagnetic order in RMn2O5

    International Nuclear Information System (INIS)

    Noda, Yukio; Kimura, Hiroyuki; Kamada, Youichi; Osawa, Toshihiro; Fukuda, Yosikazu; Ishikawa, Yoshihisa; Kobayashi, Satoru; Wakabayashi, Yusuke; Sawa, Hiroshi; Ikeda, Naoshi; Kohn, Kay

    2006-01-01

    RMn 2 O 5 (R=Y and rare earth) shows successive magnetic and ferroelectric phase transitions at about 45, 40, 39, 20 and 10K. We have reinvestigated the magnetic structure of YMn 2 O 5 at the commensurate phase (T=25K) using a single crystal four-circle diffractometer in order to discuss the mechanism of magnetoelectric interaction and the origin of ferroelectricity. We also observed the lattice modulation vectors (q L ) to compare the magnetic propagation vectors (q M ) by synchrotron X-ray diffraction. Improved magnetic structure data are compared with the theory recently proposed

  9. Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

    KAUST Repository

    Yao, Yingbang

    2014-02-01

    Multiferroic BiFeO3-(K0.5Na0.5) 0.4(Sr0.6Ba0.4)0.8Nb 2O6 (BFO-KNSBN) trilayer thin films, were epitaxially grown on MgO(0 0 1) and SrTiO3(0 0 1) by using pulsed laser deposition (PLD). Their ferroelectric, magnetic, dielectric and optical properties were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis magnetic loop was observed in the KNSBN-BFO-KNSBN trilayer films, where exchange bias and secondary phase in the BFO layer played crucial roles. Interactions between adjacent layers were revealed by temperature-dependent Raman spectroscopic measurements. © 2013 Elsevier B.V. All rights reserved.

  10. Investigation of electromagnetic properties of BiFeO3 by Time Differential Perturbed Angular Correlation (TDPAC) technique at ISOLDE

    CERN Document Server

    Efe, Ipek

    2017-01-01

    Time differential perturbed angular correlation (TDPAC) technique is one of the most sensitive techniques to study about the electric and magnetic fields at the individual lattice points. It benefits from the hyperfine interactions between the probe atom and its neighborhood. Multiferroic materials have been intensively studied to promote and understand the possibility of controlling magnetic properties by electric fields instead of magnetic fields which opens the path to faster, smaller, and more energy-efficient spintronic devices, such as memory elements, high-frequency magnetic devices, and micro-electro-mechanical systems, for data-storage technologies. BiFeO3 is one of the famous and important multiferroic materials since it shows both antiferromagnetic and ferroelectric behavior at room temperature. In this study, we report on the first time-differential perturbed angular correlation (TDPAC) measurements carried out on polycrystalline BiFeO3 samples using the nuclear probe 181Hf(181Ta) after implantati...

  11. Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

    Science.gov (United States)

    Yang, C.-H.; Seidel, J.; Kim, S. Y.; Rossen, P. B.; Yu, P.; Gajek, M.; Chu, Y. H.; Martin, L. W.; Holcomb, M. B.; He, Q.; Maksymovych, P.; Balke, N.; Kalinin, S. V.; Baddorf, A. P.; Basu, S. R.; Scullin, M. L.; Ramesh, R.

    2009-06-01

    Many interesting materials phenomena such as the emergence of high-Tc superconductivity in the cuprates and colossal magnetoresistance in the manganites arise out of a doping-driven competition between energetically similar ground states. Doped multiferroics present a tantalizing evolution of this generic concept of phase competition. Here, we present the observation of an electronic conductor-insulator transition by control of band-filling in the model antiferromagnetic ferroelectric BiFeO3 through Ca doping. Application of electric field enables us to control and manipulate this electronic transition to the extent that a p-n junction can be created, erased and inverted in this material. A `dome-like' feature in the doping dependence of the ferroelectric transition is observed around a Ca concentration of ~1/8, where a new pseudo-tetragonal phase appears and the electric modulation of conduction is optimized. Possible mechanisms for the observed effects are discussed on the basis of the interplay of ionic and electronic conduction. This observation opens the door to merging magnetoelectrics and magnetoelectronics at room temperature by combining electronic conduction with electric and magnetic degrees of freedom already present in the multiferroic BiFeO3.

  12. Electric Field Controlled Magnetism in BiFeO3/Ferromagnet Films

    Science.gov (United States)

    Holcomb, M. B.; Chu, Y. H.; Martin, L. W.; Gajek, M.; Seidel, J.; Ramesh, R.; Scholl, A.; Fraile-Rodriguez, A.

    2008-03-01

    Electric field control of magnetism is a hot technological topic at the moment due to its potential to revolutionize today's devices. Magnetoelectric materials, those having both electric and magnetic order and the potential for coupling between the two, are a promising avenue to approach electric control. BiFeO3, both a ferroelectric and an antiferromagnet, is the only single phase room temperature magnetoelectric that is currently known. In addition to other possibilities, its multiferroic nature has potential in the very active field of exchange bias, where an antiferromagnetic thin film pins the magnetic direction of an adjoining ferromagnetic layer. Since this antiferromagnet is electrically tunable, this coupling could allow electric-field control of the ferromagnetic magnetization. Direction determination of antiferromagnetic domains in BFO has recently been shown using linear and circular dichroism studies. Recently, this technique has been extended to look at the magnetic domains of a ferromagnetic grown on top of BFO. The clear magnetic changes induced by application of electric fields reveal the possibility of electric control.

  13. Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

    KAUST Repository

    Yao, Yingbang; Zhang, Bei; Chen, Long; Yang, Yang; Wang, Zhihong; Alshareef, Husam N.; Zhang, Xixiang

    2012-01-01

    Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar

  14. Microstructure, Piezoelectric, and Ferroelectric Properties of BZT-Modified BiFeO3-BaTiO3 Multiferroic Ceramics with MnO2 and CuO Addition

    Science.gov (United States)

    Guan, Shibo; Yang, Huabin; Chen, Guangcong; Zhang, Rui

    2018-02-01

    A new lead-free piezoelectric ceramic, 0.67BiFeO3-0.33BaTiO3-xBi(Zn0.5Ti0.5) O3 + 0.0035MnO2 + 0.004CuO, was prepared through the solid-state reaction route. The ceramic was sintered in the 950-990°C range. In this paper, the crystal structure of the sample is pure perovskite structure with a pseudo-cubic structure in the range of x = 0-0.05, and does not change greatly with the increase of x. The grain size increases first and then decreases with the increase of x. The addition of Bi(Zn0.5Ti0.5) O3(BZT) promoted the grain growth of the sample. The piezoelectric constant reached the maximum value of d 33 = 188 pC/N, electromechanical coupling coefficient k p = 0.301 and the remanent polarization P r = 61.20 μC/cm2 at x = 0.03. It has a high Curie temperature of T c = 420°C. On the other hand, the depolarization temperature reaches the maximum value, T d = 426°C, at x = 0. A small amount of BZT doping can improve the piezoelectric, dielectric, and ferroelectric properties of the samples. Therefore, this material can be considered as a promising lead-free piezoelectric ceramic material in the application field of high-temperature materials.

  15. BiFeO3 thin films: Novel effects

    Indian Academy of Sciences (India)

    photolithography followed by etching of the silver film. Saturation ... Fe in +3 state. Films thus obtained are therefore highly resistive (ρ ∼ 108–109 cm) and hence exhibit saturated ferroelectric hysteresis loop (figure 3). Anomaly in ... BiFeO3 bulk sample by Rogniskaya et al [4] had indicated abrupt change in lattice parame-.

  16. Graphene/semiconductor silicon modified BiFeO3/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

    International Nuclear Information System (INIS)

    Gupta, Surbhi; Medwal, Rohit; Limbu, Tej B.; Katiyar, Rajesh K.; Pavunny, Shojan P.; Morell, G.; Katiyar, R. S.; Tomar, Monika; Gupta, Vinay

    2015-01-01

    We report photovoltaic response of highly transparent graphene/BiFe 0.95 Si 0.05 O 3 (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I SC 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V OC  ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I SC of 0.63 mA and V OC of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I SC and V OC with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows

  17. Functional Properties at Domain Walls in BiFeO3: Electrical, Magnetic, and Structural investigations

    Science.gov (United States)

    He, Qing; Yang, C.-H.; Yu, P.; Gajek, M.; Seidel, J.; Ramesh, R.; Wang, F.; Chu, Y.-H.; Martin, L. W.; Spaldin, N.; Rother, A.

    2009-03-01

    BiFeO3 (BFO) is a widely studied robust ferroelectric, antiferromagnetic multiferroic. Conducting-atomic force microscopy studies reveal the presence of enhanced conductivity at certain types of domain walls in BFO. We have completed detailed TEM studies of the physical structure at these domain walls as well as in-depth DFT calculations of the evolution of electronic structure at these domain walls. These studies reveal two major contributions to the observed conduction: the formation of an electrostatic potential at the domain walls as well as a structurally-driven change in the electronic structure (i.e., a lower band gap locally) at the domain walls. We will discuss the use of optical characterization techniques as a way of probing this change in electronic structure at domain walls as well as detailed IV characterization both in atmospheric and UHV environments. Finally, the evolution of magnetism at these domain walls has been studied through the use of photoemission measurements. Initial findings point to a significant change in the magnetic order at these domain walls in BFO.

  18. Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO3 thin film

    International Nuclear Information System (INIS)

    Gupta, Surbhi; Gupta, Vinay; Tomar, Monika; James, A. R.; Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar

    2014-01-01

    Multiferroic Bismuth Ferrite (BiFeO 3 ) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO 3 thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO 3 and Fe 2 O 3 to pure BiFeO 3 phase and, subsequently, to a mixture of BiFeO 3 and Bi 2 O 3 with increase in the concentration of excess Bi from 0% to 15%. BiFeO 3 thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe 2 O 3 ). Deterioration in ferroic properties of BiFeO 3 thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO 3 thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm 2 and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO 3 thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO 3 thin films exhibiting the improved multiferroic properties.

  19. On the room temperature multiferroic BiFeO3: magnetic, dielectric and thermal properties

    Science.gov (United States)

    Lu, J.; Günther, A.; Schrettle, F.; Mayr, F.; Krohns, S.; Lunkenheimer, P.; Pimenov, A.; Travkin, V. D.; Mukhin, A. A.; Loidl, A.

    2010-06-01

    Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at mm-wavelengths, as well as ferroelectric polarization are reported for single crystalline BiFeO3. A well developed anomaly in the magnetic susceptibility signals the onset of antiferromagnetic order close to 635 K. Beside this anomaly no further indications of phase or glass transitions are indicated in the magnetic dc and ac susceptibilities down to the lowest temperatures. The heat capacity has been measured from 2 K up to room temperature and significant contributions from magnon excitations have been detected. From the low-temperature heat capacity an anisotropy gap of the magnon modes of the order of 6 meV has been determined. The dielectric constants measured in standard two-point configuration are dominated by Maxwell-Wagner like effects for temperatures T > 300 K and frequencies below 1 MHz. At lower temperatures the temperature dependence of the dielectric constant and loss reveals no anomalies outside the experimental errors, indicating neither phase transitions nor strong spin phonon coupling. The temperature dependence of the dielectric constant was measured contact free at microwave frequencies. At room temperature the dielectric constant has an intrinsic value of 53. The loss is substantial and strongly frequency dependent indicating the predominance of hopping conductivity. Finally, in small thin samples we were able to measure the ferroelectric polarization between 10 and 200 K. The saturation polarization is of the order of 40 μC/cm2, comparable to reports in literature.

  20. Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

    KAUST Repository

    Yao, Yingbang; Mak, C. L.

    2014-01-01

    were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis

  1. Electronic conduction in doped multiferroic BiFeO3

    Science.gov (United States)

    Yang, Chan-Ho; Seidel, Jan; Kim, Sang-Yong; Gajek, M.; Yu, P.; Holcomb, M. B.; Martin, L. W.; Ramesh, R.; Chu, Y. H.

    2009-03-01

    Competition between multiple ground states, that are energetically similar, plays a key role in many interesting material properties and physical phenomena as for example in high-Tc superconductors (electron kinetic energy vs. electron-electron repulsion), colossal magnetoresistance (metallic state vs. charge ordered insulating state), and magnetically frustrated systems (spin-spin interactions). We are exploring the idea of similar competing phenomena in doped multiferroics by control of band-filling. In this paper we present systematic investigations of divalent Ca doping of ferroelectric BiFeO3 in terms of structural and electronic conduction properties as well as diffusion properties of oxygen vacancies.

  2. Ultrathin limit and dead-layer effects in local polarization switching of BiFeO3

    NARCIS (Netherlands)

    Maksymovych, P.; Huijben, Mark; Pan, M.; Jesse, S.; Balke, N.; Chu, Y.H.; Chang, H.J.; Borisevich, A.Y.; Baddorf, A.P.; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Ramesh, R.; Kalinin, S.V.

    2012-01-01

    Using piezoresponse force microscopy in an ultrahigh vacuum, polarization switching has been detected and quantified in epitaxial BiFeO3 films from 200 to about 4 unit cells thick. Local remnant piezoresponse was utilized to probe both ferroelectric properties and effects of imperfect electrical

  3. Analogies between antiferromagnets and antiferroelectrics

    International Nuclear Information System (INIS)

    Enz, C.P.; Matthias, B.T.

    1980-01-01

    Ferro- and antiferromagnetism in the Laves phase TiBesub(2-x) Cusub(x) occurs for 0.1 4 H 2 PO 4 and its solid solutions with TlH 2 PO 4 and with the ferroelectric KH 2 PO 4 are discussed as function of deuteration and of pressure. Another analogy as function of pressure is established with the antiferroelectric perovskite PbZrO 3 . (author)

  4. Tuning the competition between ferromagnetism and antiferromagnetism in a half-doped manganite through magnetoelectric coupling

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Di [University of California; Liu, Jian [University of California, Berkeley & LBNL; Okamoto, Satoshi [ORNL; Jagannatha, Suresha [Lawrence Berkeley National Laboratory (LBNL); Chen, Yi-Chun [National Cheng Kung University, Tainan, Taiwan; Yu, Pu [Tsinghua University; Chu, Ying-Hao [National Chiao Tung University, Hsinchu, Taiwan; Arenholz, Elke [Lawrence Berkeley National Laboratory (LBNL); Ramesh, Ramamoorthy [University of California, Berkeley

    2013-01-01

    We investigate the possibility of controlling the magnetic phase transition of the heterointerface between a half-doped manganite La0:5Ca0:5MnO3 and a multiferroic BiFeO3 (BFO) through magnetoelectric coupling. Using macroscopic magnetometry and element-selective x-ray magnetic circular dichroism at the Mn and Fe L edges, we discover that the ferroelectric polarization of BFO controls simultaneously the magnetization of BFO and La0.5Ca0.5MnO3 (LCMO). X-ray absorption spectra at the oxygen K edge and linear dichroism at the Mn L edge suggest that the interfacial coupling is mainly derived from the superexchange between Mn and Fe t2g spins. The combination of x-ray absorption spectroscopy and mean-field theory calculations reveals that the d-electron modulation of Mn cations changes the magnetic coupling in LCMO, which controls the enhanced canted moments of interfacial BFO via the interfacial coupling. Our results demonstrate that the competition between ferromagnetic and antiferromagnetic instability can be modulated by an electric field at the heterointerface, providing another pathway for the electrical field control of magnetism.

  5. Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.

    Science.gov (United States)

    Ihlefeld, Jon F; Tian, Wei; Liu, Zi-Kui; Doolittle, W Alan; Bernhagen, Margitta; Reiche, Peter; Uecker, Reinhard; Ramesh, Ramamoorthy; Schlom, Darrell G

    2009-08-01

    BiFeO3 thin films have been deposited on (001) SrTiO3, (101) DyScO3, (011) DyScO3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002 degrees). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have 2 in-plane orientations: [1120] BiFeO3 || [1120] GaN (SiC) plus a twin variant related by a 180 degrees in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with high bandgap semiconductors is an important step toward novel field-effect devices.

  6. Multiferroic properties of BiFeO3/BaTiO3 multilayered thin films

    International Nuclear Information System (INIS)

    Sharma, Savita; Tomar, Monika; Kumar, Ashok; Puri, Nitin K.; Gupta, Vinay

    2014-01-01

    Multilayered structures of multiferroic BiFeO 3 (BFO) and ferroelectric BaTiO 3 (BTO) have been fabricated using pulsed laser deposition (PLD). Ferromagnetic and ferroelectric properties of the multilayered system (BFO/BTO) have been investigated. It could be inferred that the magnetization increases with the incorporation of BTO buffer layer, which indicates a coupling between the ferroelectric and ferromagnetic orders. Vibrating sample magnetometer (VSM) measurements performed on the prepared multiferroic samples show that the magnetization is significantly increased (M s =56.88 emu/cm 3 ) for the multilayer system with more number of layers (four) keeping the total thickness of the multilayered system constant (350 nm) meanwhile maintaining the sufficiently enhanced ferroelectric properties (P r =29.68 µC/cm 2 )

  7. Antiferromagnetic spintronics

    Science.gov (United States)

    Baltz, V.; Manchon, A.; Tsoi, M.; Moriyama, T.; Ono, T.; Tserkovnyak, Y.

    2018-01-01

    Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

  8. Antiferromagnetic spintronics

    KAUST Repository

    Baltz, V.; Manchon, Aurelien; Tsoi, M.; Moriyama, T.; Ono, T.; Tserkovnyak, Y.

    2018-01-01

    Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and

  9. Antiferromagnetic spintronics

    KAUST Repository

    Baltz, V.

    2018-02-15

    Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and

  10. Antiferromagnetic skyrmions

    Science.gov (United States)

    Tretiakov, Oleg; Barker, Joseph

    Skyrmions are topologically protected entities in magnetic materials which have the potential to be used in spintronics for information storage and processing. However, skyrmions in ferromagnets have some intrinsic difficulties which must be overcome to use them for spintronic applications, such as the inability to move straight along current. We show that skyrmions can also be stabilized and manipulated in antiferromagnetic materials. An antiferromagnetic skyrmion is a compound topological object with a similar but of opposite sign spin texture on each sublattice, which e.g. results in a complete cancelation of the Magnus force. We find that the composite nature of antiferromagnetic skyrmions gives rise to different dynamical behavior, both due to an applied current and temperature effects. O.A.T. and J.B. acknowledge support by the Grants-in-Aid for Scientific Research (Nos. 25800184, 25247056, 25220910 and 15H01009) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan and SpinNet.

  11. Controllable Photovoltaic Effect of Microarray Derived from Epitaxial Tetragonal BiFeO3 Films.

    Science.gov (United States)

    Lu, Zengxing; Li, Peilian; Wan, Jian-Guo; Huang, Zhifeng; Tian, Guo; Pan, Danfeng; Fan, Zhen; Gao, Xingsen; Liu, Jun-Ming

    2017-08-16

    Recently, the ferroelectric photovoltaic (FePV) effect has attracted great interest due to its potential in developing optoelectronic devices such as solar cell and electric-optical sensors. It is important for actual applications to realize a controllable photovoltaic process in ferroelectric-based materials. In this work, we prepared well-ordered microarrays based on epitaxially tetragonal BiFeO 3 (T-BFO) films by the pulsed laser deposition technique. The polarization-dependent photocurrent image was directly observed by a conductive atomic force microscope under ultraviolet illumination. By choosing a suitable buffer electrode layer and controlling the ferroelectric polarization in the T-BFO layer, we realized the manipulation of the photovoltaic process. Moreover, based on the analysis of the band structure, we revealed the mechanism of manipulating the photovoltaic process and attributed it to the competition between two key factors, i.e., the internal electric field caused by energy band alignments at interfaces and the depolarization field induced by the ferroelectric polarization in T-BFO. This work is very meaningful for deeply understanding the photovoltaic process of BiFeO 3 -based devices at the microscale and provides us a feasible avenue for developing data storage or logic switching microdevices based on the FePV effect.

  12. Self-Poling of BiFeO3 Thick Films.

    Science.gov (United States)

    Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

    2016-08-03

    Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

  13. Antiferromagnetic spintronics

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Martí, Xavier; Wadley, P.; Wunderlich, Joerg

    2016-01-01

    Roč. 11, č. 3 (2016), 231-241 ISSN 1748-3387 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : antiferromagnets * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 38.986, year: 2016

  14. Magnetic and ferroelectric characteristics of Gd 3 and Ti 4 co-doped ...

    Indian Academy of Sciences (India)

    2016-08-26

    Aug 26, 2016 ... Home; Journals; Bulletin of Materials Science; Volume 39; Issue 2. Magnetic and ferroelectric characteristics of Gd3+ and ... X-ray powder diffraction (XRD) results confirmed the presence of a significant amount of Bi2Fe4O9 impurity phase in the undoped BiFeO3 sample. Mössbauer spectroscopy studies ...

  15. Crystal structure and Mössbauer effect in multiferroic 0.5BiFeO3-0.5Pb(Fe0.5Ta0.5O3 solid solution

    Directory of Open Access Journals (Sweden)

    Stoch Agata

    2017-06-01

    Full Text Available Multiferroic 0.5BiFeO3-0.5Pb(Fe0.5Ta0.5O3 solid solution is a material that exhibits ferroelectric and antiferromagnetic orderings in ambient temperature. The solid solution was obtained as a result of a conventional reaction in a solid state. The obtained material is a dense, fine-grained sinter whose surface was observed by scanning electron microscopy (SEM and stoichiometry was confirmed by energy dispersive X-ray spectroscopic (EDS analysis. According to the X-ray powder diffraction (XRD measurements, the main phase is R3c space group with admixture of Pm-3m regular phase. Small contribution of pyrochlore-like phase was also observed. Mössbauer spectroscopy suggested random distribution of Fe3+/Ta5+ cations in the B sites of ABO3 compound. Reduction of the magnetic hyperfine field with an increase in the substitution of Ta5+ in Fe3+ neighbourhood was also observed.

  16. Concurrent transition of ferroelectric and magnetic ordering near room temperature.

    Science.gov (United States)

    Ko, Kyung-Tae; Jung, Min Hwa; He, Qing; Lee, Jin Hong; Woo, Chang Su; Chu, Kanghyun; Seidel, Jan; Jeon, Byung-Gu; Oh, Yoon Seok; Kim, Kee Hoon; Liang, Wen-I; Chen, Hsiang-Jung; Chu, Ying-Hao; Jeong, Yoon Hee; Ramesh, Ramamoorthy; Park, Jae-Hoon; Yang, Chan-Ho

    2011-11-29

    Strong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic Néel temperature of the multiferroic compound BiFeO(3) is suppressed to around room temperature by heteroepitaxial misfit strain. Remarkably, the ferroelectric state undergoes a first-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our findings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.

  17. Real-space imaging of non-collinear antiferromagnetic order with a single-spin magnetometer

    Science.gov (United States)

    Gross, I.; Akhtar, W.; Garcia, V.; Martínez, L. J.; Chouaieb, S.; Garcia, K.; Carrétéro, C.; Barthélémy, A.; Appel, P.; Maletinsky, P.; Kim, J.-V.; Chauleau, J. Y.; Jaouen, N.; Viret, M.; Bibes, M.; Fusil, S.; Jacques, V.

    2017-09-01

    Although ferromagnets have many applications, their large magnetization and the resulting energy cost for switching magnetic moments bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem, and often have extra functionalities: non-collinear spin order may break space-inversion symmetry and thus allow electric-field control of magnetism, or may produce emergent spin-orbit effects that enable efficient spin-charge interconversion. To harness these traits for next-generation spintronics, the nanoscale control and imaging capabilities that are now routine for ferromagnets must be developed for antiferromagnetic systems. Here, using a non-invasive, scanning single-spin magnetometer based on a nitrogen-vacancy defect in diamond, we demonstrate real-space visualization of non-collinear antiferromagnetic order in a magnetic thin film at room temperature. We image the spin cycloid of a multiferroic bismuth ferrite (BiFeO3) thin film and extract a period of about 70 nanometres, consistent with values determined by macroscopic diffraction. In addition, we take advantage of the magnetoelectric coupling present in BiFeO3 to manipulate the cycloid propagation direction by an electric field. Besides highlighting the potential of nitrogen-vacancy magnetometry for imaging complex antiferromagnetic orders at the nanoscale, these results demonstrate how BiFeO3 can be used in the design of reconfigurable nanoscale spin textures.

  18. Superior Properties of Energetically Stable La2/3Sr1/3MnO3/Tetragonal BiFeO3 Multiferroic Superlattices

    KAUST Repository

    Feng, Nan; Mi, Wenbo; Wang, Xiaocha; Cheng, Yingchun; Schwingenschlö gl, Udo

    2015-01-01

    The superlattice of energetically stable La2/3Sr1/3MnO3 and tetragonal BiFeO3 is investigated by means of density functional theory. The superlattice as a whole exhibits a half-metallic character, as is desired for spintronic devices. The interfacial electronic states and exchange coupling are analyzed in details. We demonstrate that the interfacial O atoms play a key role in controlling the coupling. The higher ferroelectricity of tetragonal BiFeO3 and stronger response to the magnetic moment in La2/3Sr1/3MnO3/BiFeO3 superlattice show a strongly enhanced electric control of the magnetism as compared to the rhombohedral one. Therefore, it is particularly practical interest in the magnetoelectric controlled spintronic devices.

  19. Superior Properties of Energetically Stable La2/3Sr1/3MnO3/Tetragonal BiFeO3 Multiferroic Superlattices

    KAUST Repository

    Feng, Nan

    2015-04-30

    The superlattice of energetically stable La2/3Sr1/3MnO3 and tetragonal BiFeO3 is investigated by means of density functional theory. The superlattice as a whole exhibits a half-metallic character, as is desired for spintronic devices. The interfacial electronic states and exchange coupling are analyzed in details. We demonstrate that the interfacial O atoms play a key role in controlling the coupling. The higher ferroelectricity of tetragonal BiFeO3 and stronger response to the magnetic moment in La2/3Sr1/3MnO3/BiFeO3 superlattice show a strongly enhanced electric control of the magnetism as compared to the rhombohedral one. Therefore, it is particularly practical interest in the magnetoelectric controlled spintronic devices.

  20. Structural, magnetic and electric properties of Nd and Ni co-doped BiFeO3 materials

    Directory of Open Access Journals (Sweden)

    Dao Viet Thang

    2017-09-01

    Full Text Available Multiferroic Bi1−xNdxFe0.975Ni0.025O3 (x = 0.00, 0.05, 0.10, 0.125, and 0.15 (BNFNO and BiFeO3 (BFO materials were synthesized by a sol-gel method. Crystal structure, ferromagnetic and ferroelectric properties of the as-synthesized materials were investigated. Results showed that Nd3+ and Ni2+ co-doping affected to the electrical leakage, enhanced ferroelectric polarization and magnetization of BiFeO3. Co-doped sample with 12.5 mol% of Nd3+ and 2.5 mol% of Ni2+ exhibited an enhancement in both ferromagnetism and ferroelectric properties up to MS ~ 0.528 emu/g and PS ~ 18.35 μC/cm2 with applied electric field at 5 kV/cm, respectively. The origins of ferromagnetism and ferroelectricity enhancement were discussed in the paper.

  1. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures (Postprint)

    Science.gov (United States)

    2016-09-01

    deformation potentially leads to fatigue and fracture over time. Moreover, we show that by simply applying voltage pulses, a robust, non-volatile...polarization such as PZT , BiFeO3, or doped HfO2. Our results thus provide a pathway towards ferroelectric switching of magnetism that could be useful for

  2. BiFeO3-doped (Na0.5K0.5NbO3 lead-free piezoelectric ceramics

    Directory of Open Access Journals (Sweden)

    Xueyi Sun et al

    2008-01-01

    Full Text Available Lead-free piezoelectric ceramics (1−x(Na0.5K0.5NbO3-xBiFeO3 (x=0~0.07 were synthesized by the solid-state reaction. Differential scanning calorimetry (DSC measurements revealed that an increase in the amount of BiFeO3 dopant resulted in a decrease in the orthorhombic-tetragonal and tetragonal-cubic phase transition temperature of the material. One percent BiFeO3 additive suppressed grain growth, which not only benefits the sintering of ceramics but also enhances the piezoelectric and ferroelectric properties, where d33=145pC/N, kp=0.31, Qm=80, Pr=11.3 μC cm−2 and Ec=16.5 kV cm−1. As xBF>0.01, both piezoelectric and ferroelectric properties decreased rapidly with an increasing amount of dopant.

  3. Local and average structure of Mn- and La-substituted BiFeO3

    Science.gov (United States)

    Jiang, Bo; Selbach, Sverre M.

    2017-06-01

    The local and average structure of solid solutions of the multiferroic perovskite BiFeO3 is investigated by synchrotron X-ray diffraction (XRD) and electron density functional theory (DFT) calculations. The average experimental structure is determined by Rietveld refinement and the local structure by total scattering data analyzed in real space with the pair distribution function (PDF) method. With equal concentrations of La on the Bi site or Mn on the Fe site, La causes larger structural distortions than Mn. Structural models based on DFT relaxed geometry give an improved fit to experimental PDFs compared to models constrained by the space group symmetry. Berry phase calculations predict a higher ferroelectric polarization than the experimental literature values, reflecting that structural disorder is not captured in either average structure space group models or DFT calculations with artificial long range order imposed by periodic boundary conditions. Only by including point defects in a supercell, here Bi vacancies, can DFT calculations reproduce the literature results on the structure and ferroelectric polarization of Mn-substituted BiFeO3. The combination of local and average structure sensitive experimental methods with DFT calculations is useful for illuminating the structure-property-composition relationships in complex functional oxides with local structural distortions.

  4. Ferroelectric devices

    CERN Document Server

    Uchino, Kenji

    2009-01-01

    Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments-and setbacks-in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding materials and device development.Filling the informational void, this collection of information reviews state-of-the-art research and development trends reflecting nano and optical technologies, environmental regulat

  5. Electric control of antiferromagnets

    OpenAIRE

    Fina, I.; Marti, X.

    2016-01-01

    In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and probe the magnetic moments in antiferromagnets have been gradually established a new and independent field known as antiferromagnetic spintronics. In this paper, we focus on the electrical control and detection of antiferromagnetic moments at a constant tem...

  6. Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate

    International Nuclear Information System (INIS)

    Leontyev, I N; Janolin, P-E; Dkhil, B; Yuzyuk, Yu I; El-Marssi, M; Chernyshov, D; Dmitriev, V; Golovko, Yu I; Mukhortov, V M

    2011-01-01

    A Nd-doped BiFeO 3 thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45 0 with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

  7. Perspectives of antiferromagnetic spintronics

    Science.gov (United States)

    Jungfleisch, Matthias B.; Zhang, Wei; Hoffmann, Axel

    2018-04-01

    Antiferromagnets are promising for future spintronic applications owing to their advantageous properties: They are magnetically ordered, but neighboring magnetic moments point in opposite directions, which results in zero net magnetization. This means antiferromagnets produce no stray fields and are insensitive to external magnetic field perturbations. Furthermore, they show intrinsic high frequency dynamics, exhibit considerable spin-orbit and magneto-transport effects. Over the past decade, it has been realized that antiferromagnets have more to offer than just being utilized as passive components in exchange bias applications. This development resulted in a paradigm shift, which opens the pathway to novel concepts using antiferromagnets for spin-based technologies and applications. This article gives a broad perspective on antiferromagnetic spintronics. In particular, the manipulation and detection of antiferromagnetic states by spintronics effects, as well as spin transport and dynamics in antiferromagnetic materials will be discussed. We will also outline current challenges and future research directions in this emerging field.

  8. Perspectives of antiferromagnetic spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Jungfleisch, Matthias B.; Zhang, Wei; Hoffmann, Axel

    2018-04-01

    Antiferromagnets are promising for future spintronics applications owing to their interesting properties: They are magnetically ordered, but neighboring magnetic moments point in opposite directions which results in zero net magneti- zation. This means antiferromagnets produce no stray fields and are insensitive to external magnetic field perturbations. Furthermore, they show intrinsic high frequency dynamics, exhibit considerable spin-orbit and magneto-transport effects. Over the past decade, it has been realized that antiferromagnets have more to offer than just being utilized as passive components in exchange bias applications. This development resulted in a paradigm shift, which opens the pathway to novel concepts using antiferromagnets for spin-based technologies and applications. This article gives a broad per- spective on antiferromagnetic spintronics. In particular, the manipulation and detection of anitferromagnetic states by spintronics effects, as well as spin transport and dynamics in antiferromagnetic materials will be discussed. We will also outline current challenges and future research directions in this emerging field.

  9. Effects of magnetic annealing on structure and multiferroic properties of pure and dysprosium substituted BiFeO 3

    KAUST Repository

    Zhang, Shuxia; Yao, Yingbang; Chen, Yao; Wang, Dongliang; Zhang, Xianping; Awaji, Satoshi; Watanabe, Kazuo; Ma, Yanwei

    2012-01-01

    In this work, the effects of magnetic annealing on crystal structure and multiferroic properties of BiFeO 3 and Bi 0.85Dy 0.15FeO 3 have been investigated. It is found that the X-ray diffraction patterns of pure BiFeO 3 samples are obviously broadened after magnetic annealing, whereas those of Bi 0.85Dy 0.15FeO 3 samples are almost unchanged. Magnetic field annealing did not affect the magnetic properties of these two kinds of samples much. However, ferroelectric properties of the two materials exhibited different behaviors after magnetic field annealing. For pure BiFeO 3 samples, the remnant polarizations (P r) are suppressed; in contrast, for Bi 0.85Dy 0.15FeO 3 samples, P r is greatly enhanced. Possible mechanisms for the effects of magnetic field annealing have been discussed. © 2012 Elsevier B.V. All rights reserved.

  10. Effects of magnetic annealing on structure and multiferroic properties of pure and dysprosium substituted BiFeO 3

    KAUST Repository

    Zhang, Shuxia

    2012-07-01

    In this work, the effects of magnetic annealing on crystal structure and multiferroic properties of BiFeO 3 and Bi 0.85Dy 0.15FeO 3 have been investigated. It is found that the X-ray diffraction patterns of pure BiFeO 3 samples are obviously broadened after magnetic annealing, whereas those of Bi 0.85Dy 0.15FeO 3 samples are almost unchanged. Magnetic field annealing did not affect the magnetic properties of these two kinds of samples much. However, ferroelectric properties of the two materials exhibited different behaviors after magnetic field annealing. For pure BiFeO 3 samples, the remnant polarizations (P r) are suppressed; in contrast, for Bi 0.85Dy 0.15FeO 3 samples, P r is greatly enhanced. Possible mechanisms for the effects of magnetic field annealing have been discussed. © 2012 Elsevier B.V. All rights reserved.

  11. Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2017-12-01

    Multiferroic BiFeO3 (BFO) thin films and nanodots are deposited on highly oriented pyrolytic graphite (HOPG) substrates via a pulsed laser deposition technique, where the HOPG surface has a honeycomb lattice structure made of carbon atoms, similar to graphene. A graphene/BFO/HOPG capacitor exhibited multiferroic properties, namely ferroelectricity (a residual polarization of 26.8 μC/cm2) and ferromagnetism (a residual magnetization of 1.1 × 10-5 emu). The BFO thin film had high domain wall energies and demonstrated switching time of approximately 82 ns. An 8-nm BFO nanodot showed a typical piezoelectric hysteresis loop with an effective residual piezoelectric constant of approximately 110 pm/V and exhibited two clearly separated current curves depending on the ferroelectric polarization direction.

  12. Enhancement of switching speed of BiFeO3 capacitors by magnetic fields

    Directory of Open Access Journals (Sweden)

    E. J. Guo

    2014-09-01

    Full Text Available The effect of a magnetic field on the ferroelectric switching kinetics of BiFeO3 (BFO capacitors with La0.8Ca0.2MnO3 (LCMO bottom electrode and Pt top contact has been investigated. We find a strong dependence of the remnant polarization and coercive field on the magnetic field. The switching time can be systematically tuned by magnetic field and reaches a tenfold reduction around the Curie temperature of LCMO at 4 T. We attribute this behavior to the splitting of the voltage drops across the BFO film and the LCMO bottom electrode, which can be strongly influenced by an external magnetic field due to the magnetoresistance. Further experiments on the BFO capacitors with SrRuO3 bottom electrodes show little magnetic field dependence of ferroelectric switching confirming our interpretation. Our results provide an efficient route to control the ferroelectric switching speed through the magnetic field, implying potential application in multifunctional devices.

  13. Synthesis of BiFeO3 thin films on single-terminated Nb : SrTiO3 (111 substrates by intermittent microwave assisted hydrothermal method

    Directory of Open Access Journals (Sweden)

    Ivan Velasco-Davalos

    2016-06-01

    Full Text Available We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO3 (111 substrates and the deposition of ferroelectric BiFeO3 thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO34− or Ti4+ layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d111 and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO3 single crystal substrates. Multiferroic BiFeO3 thin films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO3 (111 substrates. Bi(NO33 and Fe(NO33 along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO3 films on Nb : SrTiO3 (100 substrates was verified by piezoresponse force microscopy.

  14. Electric field control of magnetism using BiFeO3-based heterostructures

    International Nuclear Information System (INIS)

    Heron, J. T.; Schlom, D. G.; Ramesh, R.

    2014-01-01

    Conventional CMOS based logic and magnetic based data storage devices require the shuttling of electrons for data processing and storage. As these devices are scaled to increasingly smaller dimensions in the pursuit of speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations between ferroic orders in multiferroics, specifically the coupling between ferroelectric and magnetic orders (magnetoelectricity), new device functionalities with ultra-low energy consumption can be envisioned. In this article, we review the advances and highlight challenges toward this goal with a particular focus on the room temperature magnetoelectric multiferroic, BiFeO 3 , exchange coupled to a ferromagnet. We summarize our understanding of the nature of exchange coupling and the mechanisms of the voltage control of ferromagnetism observed in these heterostructures

  15. Tetragonal BiFeO3 on yttria-stabilized zirconia

    International Nuclear Information System (INIS)

    Liu, Heng-Jui; Du, Yu-Hao; Gao, Peng; Ikuhara, Yuichi; Huang, Yen-Chin; Chen, Yi-Chun; Chen, Hsiao-Wen; Liu, Hsiang-Lin; He, Qing; Chu, Ying-Hao

    2015-01-01

    High structural susceptibility of multiferroic BiFeO 3 (BFO) makes it a potential replacement of current Pb-based piezoelectrics. In this study, a tetragonal phase is identified based on a combination of x-ray diffraction, scanning transmission electronic microscopy, x-ray absorption spectroscopy, and Raman spectroscopy when BFO is grown on yttria-stabilized zirconia (YSZ) substrates. To distinguish the discrepancy between this tetragonal phase and common cases of monoclinic BFO, piezoelectric force microscopy images and optical property are also performed. It shows a lower electrostatic energy of ferroelectric domains and a large reduction of band gap for BFO grown on YSZ substrate comparing to the well-known one grown on LaAlO 3 substrate. Our findings in this work can provide more insights to understand the structural diversity of multiferroic BFO system for further applications

  16. Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

    KAUST Repository

    Yao, Yingbang

    2012-12-28

    Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar or bipolar poling with various applied electric fields. The effects of polarization relaxation and fatigue on the currents were also investigated. We found that the conduction currents and the associated rectifications were controlled by the amplitude and direction of the polarization. We clearly observed the linear dependence of the current on the polarization. It is suggested that the space-charge-limited conduction and the charge injection at the Schottky interface between the film and the electrodes dominate the current. The electrically controlled rectifying behaviour observed in this study may be useful in nonvolatile resistance memory devices or tunable diodes. © 2013 IOP Publishing Ltd.

  17. Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

    International Nuclear Information System (INIS)

    Puli, Venkata Sreenivas; Chrisey, Douglas B; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Misra, Pankaj; Scott, J F; Katiyar, Ram S; Coondoo, Indrani; Panwar, Neeraj

    2014-01-01

    We report photovoltaic (PV) effect in multiferroic Bi 0.9 Sm 0.1 Fe 0.95 Co 0.05 O 3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (V oc ) and the short-circuit current density (J sc ) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm −2 . Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. (paper)

  18. Electric-field control of spin waves in multiferroic BiFeO3: Theory

    Science.gov (United States)

    de Sousa, Rogério; Rovillain, P.; Gallais, Y.; Sacuto, A.; Méasson, M. A.; Colson, D.; Forget, A.; Bibes, M.; Barthélémy, A.; Cazayous, M.

    2011-03-01

    Our recent experiment demonstrated gigantic (30%) electric-field tuning of magnon frequencies in multiferroic BiFeO3. We demonstrate that the origin of this effect is related to two linear magnetoelectric interactions that couple the component of electric field perpendicular to the ferroelectric vector to a quadratic form of the Néel vector. We calculate the magnon spectra due to each of these interactions and show that only one of them is consistent with experimental data. At high electric fields, this interaction induces a phase transition to a homogeneous state, and the multi-magnon spectra will fuse into two magnon frequencies. We discuss the possible microscopic mechanisms responsible for this novel interaction and the prospect for applications in magnonics. We acknowledge support from NSERC-Discovery (Canada) and the Agence Nationale pour la Recherche (France).

  19. Giant Polarization Rotation in BiFeO3/SrTiO3 Thin Films.

    Science.gov (United States)

    Langner, M. C.; Chu, Y. H.; Martin, L. M.; Gajek, M.; Ramesh, R.; Orenstein, J.

    2008-03-01

    We use optical second harmonic generation to probe dynamics of the ferroelectric polarization in (111) oriented BiFeO3 thin films grown on SrTiO3 substrates. The second harmonic response indicates 3m point group symmetry and is consistent with a spontaneous polarization normal to the surface of the film. We measure large changes in amplitude and lowering of symmetry, consistent with polarization rotation, when modest electric fields are applied in the plane of the film. At room temperature the rotation is an order of magnitude larger than expected from reported values of the dielectric constant and increases further (as 1/T) as temperature is lowered. We propose a substrate interaction model to explain these results.

  20. Electrical conduction at domain walls in multiferroic BiFeO3

    Science.gov (United States)

    Seidel, Jan; Martin, Lane; He, Qing; Zhan, Qian; Chu, Ying-Hao; Rother, Axel; Hawkridge, Michael; Maksymovych, Peter; Yu, Pu; Gajek, Martin; Balke, Nina; Kalinin, Sergei; Gemming, Sybille; Wang, Feng; Catalán, Gustau; Scott, James; Spaldin, Nicola; Orenstein, Joseph; Ramesh, Ramamoorthy

    2009-03-01

    We report the observation of room temperature electronic conductivity at ferroelectric domain walls in BiFeO3. The origin and nature of the observed conductivity is probed using a combination of conductive atomic force microscopy, high resolution transmission electron microscopy and first-principles density functional computations. We show that a structurally driven change in both the electrostatic potential and local electronic structure (i.e., a decrease in band gap) at the domain wall leads to the observed electrical conductivity. We estimate the conductivity in the wall to be several orders of magnitude higher than for the bulk material. Additionally we demonstrate the potential for device applications of such conducting nanoscale features.

  1. Magnetic Field Control of Cycloidal Domains and Electric Polarization in Multiferroic BiFeO3

    Science.gov (United States)

    Bordács, S.; Farkas, D. G.; White, J. S.; Cubitt, R.; DeBeer-Schmitt, L.; Ito, T.; Kézsmárki, I.

    2018-04-01

    The magnetic field induced rearrangement of the cycloidal spin structure in ferroelectric monodomain single crystals of the room-temperature multiferroic BiFeO3 is studied using small-angle neutron scattering. The cycloid propagation vectors are observed to rotate when magnetic fields applied perpendicular to the rhombohedral (polar) axis exceed a pinning threshold value of ˜5 T . In light of these experimental results, a phenomenological model is proposed that captures the rearrangement of the cycloidal domains, and we revisit the microscopic origin of the magnetoelectric effect. A new coupling between the magnetic anisotropy and the polarization is proposed that explains the recently discovered magnetoelectric polarization perpendicular to the rhombohedral axis.

  2. Spintronics of antiferromagnetic systems

    International Nuclear Information System (INIS)

    Gomonaj, E.V.; Loktev, V.M.

    2014-01-01

    Spintronics of antiferromagnetics is a new field that has developed in a fascinating research topic in physics of magnetism. Antiferromagnetics, like ferromagnetic materials experience the influence of spin-polarized current, even though they show no macroscopic magnetization. The mechanism of this phenomenon is related to spin-dependent interaction between free and localized electrons-sd-exchange. Due to the peculiarities of antiferromagnetic materials (complicated magnetic structure, essential role of the exchange interactions, lack of macroscopic magnetization) spintronics of antiferromagnets appeals to new theoretical and experimental approaches. The purpose of this review is to systemize and summarize the recent progress in this field. We start with a short introduction into the structure and dynamics of antiferromagnets and proceed with discussion of different microscopic and phenomenological theories for description of current-induced phenomena in ferro-/antiferromagnetic heterostructures. We also consider the problems of the reverse influence of antiferromagnetic ordering on current, and effectiveness of the fully antiferromagnetic spin valve. In addition, we shortly review and interpret the available experimental results.

  3. Optical spectroscopic study of multiferroic BiFeO3 and LuFe2O4

    Science.gov (United States)

    Xu, Xiaoshan

    2010-03-01

    Iron-based multiferroics such as BiFeO3 and LuFe2O4 exhibit the highest magnetic and ferroelectric ordering temperatures among known multiferroics. LuFe2O4 is a frustrated system with several phase transitions that result in electronically driven multiferroicity. To understand how this peculiar multiferroic mechanism correlates with magnetism, we studied electronic excitations by optical spectroscopy and other complementary techniques. We show that the charge order, which determines the dielectric properties, is due to the ``order by fluctuation'' mechanism, evidenced by the onset of charge fluctuation well below the charge ordering transition. We also find a low temperature monoclinic distortion driven by both temperature and magnetic field, indicating strong coupling between structure, magnetism and charge order. BiFeO3 is the only known single phase multiferroics with room temperature magnetism and ferroelectricity. To investigate the spin-charge coupling, we measured the optical properties of BiFeO3. We find that the absorption onset occurs due to on-site Fe^3+ excitations at 1.41 and 1.90 eV. Temperature and magnetic-field-induced spectral changes reveal complex interactions between on-site crystal-field and magnetic excitations in the form of magnon sidebands. The sensitivity of the magnon sidebands allows us to map out the magnetic-field temperature phase diagram which demonstrates optical evidence for spin spiral quenching above 20 T and suggests a spin domain reorientation near 10 T. Work done in collaboration with T.V. Brinzari, R.C. Rai, M. Angst, R.P. Hermann, A.D. Christianson, J.-W. Kim, Z. Islam, B.C. Sales, D. Mandrus, S. Lee, Y.H. Chu, L. W. Martin, A. Kumar, R. Ramesh, S.W. Cheong, S. McGill, and J.L. Musfeldt.

  4. Non-volatile memory based on the ferroelectric photovoltaic effect

    Science.gov (United States)

    Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

    2013-01-01

    The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

  5. Structural transitions and multiferroic properties of high Ni-doped BiFeO3

    Science.gov (United States)

    Betancourt-Cantera, L. G.; Bolarín-Miró, A. M.; Cortés-Escobedo, C. A.; Hernández-Cruz, L. E.; Sánchez-De Jesús, F.

    2018-06-01

    Nickel doped bismuth ferrite powders, BiFe1-x NixO3 (0 ≤ x ≤ 0.5), were synthesized by high-energy ball milling followed by an annealing at 700 °C. A detailed study about the substitution of Fe3+ by Ni2+ on the crystal structure and multiferroic properties is presented. The X-ray diffraction patterns reveal the formation of rhombohedral structure with small amounts of Bi2Fe4O9 as a secondary phase for x behavior indicates the frustration of the G-antiferromagnetic order typical of the un-doped BiFeO3, caused by the presence of small amounts of Ni2+ (x Behavior modifications of electrical conductivity, permittivity and dielectric loss versus frequency are related with crystal structure transformations, when nickel concentration is increased.

  6. BiFeO3 Crystal Structure at Low Temperatures

    International Nuclear Information System (INIS)

    Palewicz, A.; Sosnowska, I.; Przenioslo, R.; Hewat, A.W.

    2010-01-01

    The crystal and magnetic structure of BiFeO 3 have been studied with the use of high resolution neutron diffraction between 5 K and 300 K. The atomic coordinates in BiFeO 3 are almost unchanged between 5 K and 300 K. (authors)

  7. Excitation of spin waves in BiFeO3 multiferroic film by the slot line transducer

    Science.gov (United States)

    Korneev, V. I.; Popkov, A. F.; Solov'yov, S. V.

    2018-01-01

    Analysis of the efficiency of magnetoelectric excitation of spin-waves in BiFeO3 multiferroic films by a slot line is performed based on the solution of dynamic Ginzburg-Landau equations for the antiferromagnetic vector. The excitation efficiency is determined by the magnitude of the conversion coefficient of the electromagnetic wave to the spin wave by the slot line transducer or in other words, losses on conversion in the slot line. Calculations are made for a homogeneous antiferromagnetic state of the multiferroic in the presence of a sufficiently large magnetic field and for a spatially modulated spin state (SMSS) at zero magnetic field. It is shown that in the case of a homogeneous antiferromagnetic state, the losses on the excitation of spin waves exceed the excitation efficiency in the SMSS state; however, as the frequency approaches the spin excitation gap, it falls and becomes lower than in the SMSS state. Spin wave excitation in the presence of antiferromagnetic cycloid strongly depends on the relation of the slot width of the transducer to the cycloid periodicity and on the magnitude of the shift of the position of the transducer along the cycloid on its period. The usage of multiferroics for delay lines in the considered frequency range from 100 to 600 GHz requires significant reduction in conversion and propagation losses. More promising seems multiferroic usage in phase shifters and switches for this range.

  8. Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films

    International Nuclear Information System (INIS)

    Kim, D J; Gruverman, A; Connell, J G; Seo, S S A

    2016-01-01

    Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO 3 and Pb(Zr,Ti)O 3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO 3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO 3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects. (paper)

  9. Coexisting exchange bias effect and ferroelectricity in geometrically frustrated ZnCr2O4

    Science.gov (United States)

    Dey, J. K.; Majumdar, S.; Giri, S.

    2018-06-01

    Concomitant occurrence of exchange bias effect and ferroelectric order is revealed in antiferromagnetic spinel ZnCr2O4. The exchange bias effect is observed below antiferromagnetic Neél temperature (T N) with a reasonable value of exchange bias field ( Oe at 2 K). Intriguingly, the ratio is found unusually high as  ∼2.2, where H C is the coercivity. This indicates that large H C is not always primary for obtaining large exchange bias effect. Ferroelectric order is observed at T N, where non-centrosymmetric magnetic structure with space group associated with the magnetoelectric coupling correlates the ferroelectric order, proposing that, ZnCr2O4 is an improper multiferroic material. Rare occurrence of exchange bias effect and ferroelectric order in ZnCr2O4 attracts the community for fundamental interest and draws special attention in designing new materials for possible electric field control of exchange bias effect.

  10. Ferroelectric ultrathin perovskite films

    Science.gov (United States)

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  11. Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

    Science.gov (United States)

    Klug, Jeffrey A.

    The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

  12. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  13. First-principles approach to the dynamic magnetoelectric couplings for the non-reciprocal directional dichroism in BiFeO3

    International Nuclear Information System (INIS)

    Lee, Jun Hee; Fishman, Randy S; Kézsmáki, István

    2016-01-01

    Due to the complicated magnetic and crystallographic structures of BiFeO 3 , its magnetoelectric (ME) couplings and microscopic model Hamiltonian remain poorly understood. By employing a first-principles approach, we uncover all possible ME couplings associated with the spin-current (SC) and exchange-striction (ES) polarizations, and construct an appropriate Hamiltonian for the long-range spin-cycloid in BiFeO 3 . First-principles calculations are used to understand the microscopic origins of the ME couplings. We find that inversion symmetries broken by ferroelectric and antiferroelectric distortions induce the SC and the ES polarizations, which cooperatively produce the dynamic ME effects in BiFeO 3 . A model motivated by first principles reproduces the absorption difference of counter-propagating light beams called non-reciprocal directional dichroism. The current paper focuses on the spin-driven (SD) polarizations produced by a dynamic electric field, i.e. the dynamic ME couplings. Due to the inertial properties of Fe, the dynamic SD polarizations differ significantly from the static SD polarizations. Our systematic approach can be generally applied to any multiferroic material, laying the foundation for revealing hidden ME couplings on the atomic scale and for exploiting optical ME effects in the next generation of technological devices such as optical diodes. (paper)

  14. Dielectric and piezoelectric properties of BiFeO3 modified Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

    International Nuclear Information System (INIS)

    Zhou Changrong; Liu Xinyu; Li Weizhou

    2008-01-01

    The (0.82 - x)Bi 0.5 Na 0.5 TiO 3 -0.18Bi 0.5 K 0.5 TiO 3 -xBiFeO 3 (x = 0-0.07) lead-free piezoelectric ceramics were fabricated by a conventional solid-state reaction method and the effect of BiFeO 3 addition on microstructure and electrical properties of the ceramics was investigated. The specimens with x ≤ 0.05 maintained a rhombohedral-tetragonal phase coexistence and changed into a rhombohedral phase when x > 0.05 in crystal structure. The addition of BiFeO 3 caused a promoted grain growth. All the specimens reveal a low-frequency dielectric dispersion in the frequency range of 40-1 MHz. The piezoelectric constant d 33 and the electromechanical coupling factor k p show an obvious improvement by the addition of small amount of BiFeO 3 , which shows optimum values of d 33 = 170 pC/N and k p = 0.366 at x = 0.03. Contrary to the enhancement of piezoelectric properties, Q m decreases with increasing BiFeO 3 content. The mechanisms of intrinsic and extrinsic contributions to the dielectric and piezoelectric responses have been proposed. Intrinsic contributions are from the relative ion/cation shift that preserves the ferroelectric crystal structure. The remaining extrinsic contributions are from the domain-wall motion and point defects

  15. Antiferromagnetic spin-orbitronics

    KAUST Repository

    Manchon, Aurelien; Saidaoui, Hamed Ben Mohamed; Ghosh, Sumit

    2015-01-01

    Antiferromagnets have long remained an intriguing and exotic state of matter, whose application has been restricted to enabling interfacial exchange bias in metallic and tunneling spin-valves [1]. Their role in the expanding field of applied spintronics has been mostly passive and the in-depth investigation of their basic properties mostly considered from a fundamental perspective.

  16. Nanoparticles of antiferromagnetic materials

    DEFF Research Database (Denmark)

    Madsen, Daniel Esmarch

    2008-01-01

    I denne Ph.D. afhandling studeres forskellige egenskaber ved antiferromagnetiske nanopartikler. I en ideel antiferromagnet er spinnene orienteret således at der ikke er et resulterende magnetisk moment. I nanopartikler af antiferromagnetiske materialer er denne kompensation på grund af forskellig...

  17. Antiferromagnetic spin-orbitronics

    KAUST Repository

    Manchon, Aurelien

    2015-05-01

    Antiferromagnets have long remained an intriguing and exotic state of matter, whose application has been restricted to enabling interfacial exchange bias in metallic and tunneling spin-valves [1]. Their role in the expanding field of applied spintronics has been mostly passive and the in-depth investigation of their basic properties mostly considered from a fundamental perspective.

  18. Prospect for antiferromagnetic spintronics

    Czech Academy of Sciences Publication Activity Database

    Martí, Xavier; Fina, I.; Jungwirth, Tomáš

    2015-01-01

    Roč. 51, č. 4 (2015), s. 2900104 ISSN 0018-9464 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.277, year: 2015

  19. Evidence of sharp and diffuse domain walls in BiFeO3 by means of unit-cell-wise strain and polarization maps obtained with high resolution scanning transmission electron microscopy.

    Science.gov (United States)

    Lubk, A; Rossell, M D; Seidel, J; He, Q; Yang, S Y; Chu, Y H; Ramesh, R; Hÿtch, M J; Snoeck, E

    2012-07-27

    Domain walls (DWs) substantially influence a large number of applications involving ferroelectric materials due to their limited mobility when shifted during polarization switching. The discovery of greatly enhanced conduction at BiFeO(3) DWs has highlighted yet another role of DWs as a local material state with unique properties. However, the lack of precise information on the local atomic structure is still hampering microscopical understanding of DW properties. Here, we examine the atomic structure of BiFeO(3) 109° DWs with pm precision by a combination of high-angle annular dark-field scanning transmission electron microscopy and a dedicated structural analysis. By measuring simultaneously local polarization and strain, we provide direct experimental proof for the straight DW structure predicted by ab initio calculations as well as the recently proposed theory of diffuse DWs, thus resolving a long-standing discrepancy between experimentally measured and theoretically predicted DW mobilities.

  20. Superconductivity in doped antiferromagnets

    International Nuclear Information System (INIS)

    Lagos, M.

    1990-09-01

    The antiferromagnetic S = 1/2 Heisenberg model is extended to account for the presence of holes. The holes move along a sublattice whose sites are located in between the spin sites. The spin-hole coupling arises from the modification of the exchange interaction between two neighbouring spins when the site between them is occupied by a hole. this physical picture leads to a generalized version of the so called t-J model Hamiltonian. The use of a recently developed method that introduces spin-O excitations for dealing with the Heisenberg antiferromagnetic model allows us to map the model Hamiltonian onto a Froelich one, with the spin-O magnetic excitations substituting phonons. The case of electrons moving along the spin sites is discussed as well. (author). 16 refs, 2 figs

  1. Doping effect on ferromagnetism, ferroelectricity and dielectric constant in sol-gel derived Bi1-xNdxFe1-yCoyO3 nanoceramics

    Science.gov (United States)

    Das, Sananda; Sahoo, R. C.; Bera, K. P.; Nath, T. K.

    2018-04-01

    Doping at the post-transition metal site by trivalent rare-earth ions and 3d transition metal site by transition metal ions in perovskite lattice has observed a variety of magnetic and electronic orders with spatially correlated charge, spin and orbital degrees of freedom. Here, we report large ferromagnetism and enhanced dielectric constant (at ∼100 Hz) in chemically synthesized single phase multiferroic Bi1-xNdxFe1-yCoyO3 (x = 0, 0.10; y = 0, 0.10) nanoparticles (average particles size ∼45 nm). We have also examined the ferroelectric nature of our chemically synthesized samples. The Rietveld refinement of the XRD data reveals the structural symmetry breaking from distorted rhombohedral R3c structure of BiFeO3 to the triclinic P1 structure in Bi0.9Nd0.1Fe0.9Co0.1O3 (BNFCO) without having any iron rich impurity phase. The magnetization in these nanoceramics most likely originates from the coexistence of mixed valence states of Fe ion (Fe2+ and Fe3+). A high room temperature dielectric constant (∼1050) has been observed at 100 Hz of BNFCO sample. The frequency dependent anomalies near Neel temperature of antiferromagnet in temperature variation of dielectric study have been observed for all the doped and co-doped samples exhibiting typical characteristic of relaxor ferroelectrics. A spectacular enhancement of remanent magnetization MR (∼7.2 emu/gm) and noticeably large coercivity HC (∼17.4 kOe) at 5 K have been observed in this BNFCO sample. Such emergence of ferromagnetic ordering indicates the canting of the surface spins at the surface boundaries because of the reduction of particle size in nanodimension. We have also observed P-E hysteresis loops with a remanent polarization of 26 μC/cm2 and coercive field of 5.6 kV/cm of this sample at room temperature. From impedance spectroscopy study the estimated activation energy of 0.41 eV suggests the semiconducting nature of our nanoceramic BNCFO sample.

  2. Concepts of antiferromagnetic spintronics

    Czech Academy of Sciences Publication Activity Database

    Gomonay, O.; Jungwirth, Tomáš; Sinova, Jairo

    2017-01-01

    Roč. 11, č. 4 (2017), 1-8, č. článku 1700022. ISSN 1862-6254 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.032, year: 2016

  3. Two-dimensional ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Blinov, L M; Fridkin, Vladimir M; Palto, Sergei P [A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federaion (Russian Federation); Bune, A V; Dowben, P A; Ducharme, Stephen [Department of Physics and Astronomy, Behlen Laboratory of Physics, Center for Materials Research and Analysis, University of Nebraska-Linkoln, Linkoln, NE (United States)

    2000-03-31

    The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of {approx}200 A and the thinnest ferroelectric films were {approx}200 A thick, macroscopic sizes on an atomic scale. Langmuir-Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir-Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric-paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the two-dimensional layers. (reviews of topical problems)

  4. Spin reorientation via antiferromagnetic coupling

    Energy Technology Data Exchange (ETDEWEB)

    Ranjbar, M., E-mail: mojtaba.ranjbar@physics.gu.se [Data Storage Institute, A-STAR (Agency for Science, Technology and Research), 5, Engineering Drive 1, Singapore 117608 (Singapore); Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Sbiaa, R. [Data Storage Institute, A-STAR (Agency for Science, Technology and Research), 5, Engineering Drive 1, Singapore 117608 (Singapore); Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123, Muscat (Oman); Dumas, R. K. [Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Åkerman, J. [Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Materials Physics, School of ICT, Royal Institute of Technology (KTH), 164 40 Kista (Sweden); Piramanayagam, S. N. [Data Storage Institute, A-STAR (Agency for Science, Technology and Research), 5, Engineering Drive 1, Singapore 117608 (Singapore)

    2014-05-07

    Spin reorientation in antiferromagnetically coupled (AFC) Co/Pd multilayers, wherein the thickness of the constituent Co layers was varied, was studied. AFC-Co/Pd multilayers were observed to have perpendicular magnetic anisotropy even for a Co sublayer thickness of 1 nm, much larger than what is usually observed in systems without antiferromagnetic coupling. When similar multilayer structures were prepared without antiferromagnetic coupling, this effect was not observed. The results indicate that the additional anisotropy energy contribution arising from the antiferromagnetic coupling, which is estimated to be around 6 × 10{sup 6} ergs/cm{sup 3}, induces the spin-reorientation.

  5. Anharmonic phonons and magnons in BiFeO3

    Energy Technology Data Exchange (ETDEWEB)

    Delaire, Olivier A [ORNL; Ma, Jie [ORNL; Stone, Matthew B [ORNL; Huq, Ashfia [ORNL; Gout, Delphine J [ORNL; Brown, Craig [National Institute of Standards and Technology (NIST); Wang, Kefeng [Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing; Ren, Zhifeng [Boston College, Chestnut Hill

    2012-01-01

    The phonon density of states (DOS) and magnetic excitation spectrum of polycrystalline BiFeO3 were measured for temperatures 200 < T < 750K , using inelastic neutron scattering (INS). Our results indicate that the magnetic spectrum of BiFeO3 closely resembles that of similar Fe perovskites, such as LaFeO3, despite the cycloid modulation in BiFeO3. We do not find any evidence for a spin gap. A strong T-dependence of the phonon DOS was found, with a marked broadening of the whole spectrum, providing evidence of strong anharmonicity. This anharmonicity is corroborated by large amplitude motions of Bi and O ions observed with neutron diffraction. These results highlight the importance of spin-phonon coupling in this material.

  6. Diamond lattice Heisenberg antiferromagnet

    Science.gov (United States)

    Oitmaa, J.

    2018-04-01

    We investigate ground-state and high-temperature properties of the nearest-neighbour Heisenberg antiferromagnet on the three-dimensional diamond lattice, using series expansion methods. The ground-state energy and magnetization, as well as the magnon spectrum, are calculated and found to be in good agreement with first-order spin-wave theory, with a quantum renormalization factor of about 1.13. High-temperature series are derived for the free energy, and physical and staggered susceptibilities for spin S  =  1/2, 1 and 3/2, and analysed to obtain the corresponding Curie and Néel temperatures.

  7. Bulk photovoltaic effect in epitaxial (K, Nb) substituted BiFeO3 thin films

    Science.gov (United States)

    Agarwal, Radhe; Zheng, Fan; Sharma, Yogesh; Hong, Seungbum; Rappe, Andrew; Katiyar, Ram

    We studied the bulk photovoltaic effect in epitaxial (K, Nb) modified BiFeO3 (BKFNO) thin films using theoretical and experimental methods. Epitaxial BKFNO thin films were grown by pulsed laser deposition (PLD). First, we have performed first principles density function theory (DFT) using DFT +U method to calculate electronic band structure, including Hubbard-Ueff (Ueff =U-J) correction into Hamiltonian. The electronic band structure calculations showed a direct band gap at 1.9 eV and a defect level at 1.7 eV (in a 40 atom BKFNO supercell), sufficiently lower in comparison to the experimentally observed values. Furthermore, the piezoforce microscopy (PFM) measurements indicated the presence of striped polydomains in BKFNO thin films. Angle-resolved PFM measurements were also performed to find domain orientation and net polarization directions in these films. The experimental studies of photovoltaic effect in BKNFO films showed a short circuit current of 59 micro amp/cm2 and open circuit voltage of 0.78 V. We compared our experimental results with first principles shift current theory calculations of bulk photovoltaic effect (BPVE).The synergy between theory and experimental results provided a realization of significant role of BPVE in order to understand the photovoltaic mechanism in ferroelectrics.

  8. Presence of glassy state and large exchange bias in nanocrystalline BiFeO3

    Science.gov (United States)

    Srivastav, Simant Kumar; Johari, Anima; Patel, S. K. S.; Gajbhiye, N. S.

    2017-11-01

    We investigated the static and dynamic aspects of the magnetic properties for single phase nanocrystalline BiFeO3 with average crystallite size of 35 nm. The frequency dependence of the peak is observed in the real part of ac susceptibility χ‧ac vs T measurement and described well by the Vogel-Fulcher law as well as the power law. These analyses indicated the existence of cluster glass state with significant interaction among the spin clusters and results in cluster-glass like cooperative freezing at low temperature. The influence of temperature and magnetic field cooling on the exchange bias effect is investigated. A training effect is also observed. We have reported a significantly high ZFC & FC exchange bias of 200 Oe & 450 Oe at 300 K and 900 Oe & 2100 Oe at 5 K. The obtained results are interpreted in the framework of core-shell model, where the core of the BFO nanoparticles shows antiferromagnetic behavior and surrounded by CG-like ferromagnetic (FM) shell associated to uncompensated surface spins.

  9. Magnetic ordering induced giant optical property change in tetragonal BiFeO3

    Science.gov (United States)

    Tong, Wen-Yi; Ding, Hang-Chen; Gong, Shi Jing; Wan, Xiangang; Duan, Chun-Gang

    2015-12-01

    Magnetic ordering could have significant influence on band structures, spin-dependent transport, and other important properties of materials. Its measurement, especially for the case of antiferromagnetic (AFM) ordering, however, is generally difficult to be achieved. Here we demonstrate the feasibility of magnetic ordering detection using a noncontact and nondestructive optical method. Taking the tetragonal BiFeO3 (BFO) as an example and combining density functional theory calculations with tight-binding models, we find that when BFO changes from C1-type to G-type AFM phase, the top of valance band shifts from the Z point to Γ point, which makes the original direct band gap become indirect. This can be explained by Slater-Koster parameters using the Harrison approach. The impact of magnetic ordering on band dispersion dramatically changes the optical properties. For the linear ones, the energy shift of the optical band gap could be as large as 0.4 eV. As for the nonlinear ones, the change is even larger. The second-harmonic generation coefficient d33 of G-AFM becomes more than 13 times smaller than that of C1-AFM case. Finally, we propose a practical way to distinguish the two AFM phases of BFO using the optical method, which is of great importance in next-generation information storage technologies.

  10. Ferroelectric switching of elastin

    Science.gov (United States)

    Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

    2014-01-01

    Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

  11. Ferroelectricity at the nanoscale basics and applications

    CERN Document Server

    Fridkin, Vladimir

    2014-01-01

    This book examines a wide range of ferroelectric materials. It explains the theoretical background of ultrathin ferroelectric films,  presents applications of ferroelectric materials, and displays the mechanism of switching of nanosized ferroelectric films.

  12. Synthesis of BiFeO 3 by carbonate precipitation

    Indian Academy of Sciences (India)

    Magnetoelectric multiferroic BiFeO3 (BFO) was synthesized by a simple carbonate precipitation technique of metal nitrate solutions. X-ray powder diffraction and thermo-gravimetric analysis (TGA) revealed that the precipitate consists of an intimate mixture of crystalline bismuth carbonate and an amorphous hydroxide of ...

  13. Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

    Science.gov (United States)

    Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin-Seok; Yoon, Jong-Gul; Chen, Long-Qing; Yang, Sang Mo; Noh, Tae Won

    2018-05-01

    Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip3,4. However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

  14. Enhanced Photocurrent in BiFeO3 Materials by Coupling Temperature and Thermo-Phototronic Effects for Self-Powered Ultraviolet Photodetector System.

    Science.gov (United States)

    Qi, Jia; Ma, Nan; Ma, Xiaochen; Adelung, Rainer; Yang, Ya

    2018-04-25

    Ferroelectric materials can be utilized for fabricating photodetectors because of the photovoltaic effect. Enhancing the photovoltaic performance of ferroelectric materials is still a challenge. Here, a self-powered ultraviolet (UV) photodetector is designed based on the ferroelectric BiFeO 3 (BFO) material, exhibiting a high current/voltage response to 365 nm light in heating/cooling states. The photovoltaic performance of the BFO-based device can be well modulated by applying different temperature variations, where the output current and voltage can be enhanced by 60 and 75% in heating and cooling states, respectively. The enhancement mechanism of the photocurrent is associated with both temperature effect and thermo-phototronic effect in the photovoltaic process. Moreover, a 4 × 4 matrix photodetector array has been designed for detecting the 365 nm light distribution in the cooling state by utilizing photovoltage signals. This study clarifies the role of the temperature effect and the thermo-phototronic effect in the photovoltaic process of the BFO material and provides a feasible route for pushing forward practical applications of self-powered UV photodetectors.

  15. Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures.

    Science.gov (United States)

    Wang, J J; Hu, J M; Yang, T N; Feng, M; Zhang, J X; Chen, L Q; Nan, C W

    2014-04-01

    Voltage-modulated magnetism in magnetic/BiFeO3 heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO3 and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO3 film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO3 that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO3-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO3-based heterostructures.

  16. First-principles approach to the dynamic magnetoelectric couplings for the non-reciprocal directional dichroism in BiFeO3

    Science.gov (United States)

    Lee, Jun Hee; Kézsmáki, István; Fishman, Randy S.

    2016-04-01

    Due to the complicated magnetic and crystallographic structures of BiFeO3, its magnetoelectric (ME) couplings and microscopic model Hamiltonian remain poorly understood. By employing a first-principles approach, we uncover all possible ME couplings associated with the spin-current (SC) and exchange-striction (ES) polarizations, and construct an appropriate Hamiltonian for the long-range spin-cycloid in BiFeO3. First-principles calculations are used to understand the microscopic origins of the ME couplings. We find that inversion symmetries broken by ferroelectric and antiferroelectric distortions induce the SC and the ES polarizations, which cooperatively produce the dynamic ME effects in BiFeO3. A model motivated by first principles reproduces the absorption difference of counter-propagating light beams called non-reciprocal directional dichroism. The current paper focuses on the spin-driven (SD) polarizations produced by a dynamic electric field, i.e. the dynamic ME couplings. Due to the inertial properties of Fe, the dynamic SD polarizations differ significantly from the static SD polarizations. Our systematic approach can be generally applied to any multiferroic material, laying the foundation for revealing hidden ME couplings on the atomic scale and for exploiting optical ME effects in the next generation of technological devices such as optical diodes. This manuscript has been written by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the US Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan.

  17. Multiferroic BiFeO3-BiMnO3 Nanocheckerboard From First Principles

    OpenAIRE

    Palova, L.; Chandra, P.; Rabe, K. M.

    2010-01-01

    We present a first principles study of an unusual heterostructure, an atomic-scale checkerboard of BiFeO3-BiMnO3, and compare its properties to the two bulk constituent materials, BiFeO3 and BiMnO3. The "nanocheckerboard" is found to have a multiferroic ground state with the desired properties of each constituent: polar and ferrimagnetic due to BiFeO3 and BiMnO3, respectively. The effect of B-site cation ordering on magnetic ordering in the BiFeO3-BiMnO3 system is studied. The checkerboard ge...

  18. Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

    KAUST Repository

    Yang, Yang; Yao, Yingbang; Zhang, Q.; Zhang, Xixiang

    2014-01-01

    Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences

  19. Losses in Ferroelectric Materials

    Science.gov (United States)

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  20. Losses in Ferroelectric Materials.

    Science.gov (United States)

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-03-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  1. Quantum Number Fractionalization in Antiferromagnets

    OpenAIRE

    Laughlin, R. B.; Giuliano, D.; Caracciolo, R.; White, O.

    1998-01-01

    This is a pedagogical introduction to the mathematics of 1-dimensional spin-1/2 antiferromagnets. Topics covered include the Haldane-Shastry Hamiltonian, vector ``supercharges'', conserved spin currents, spinons, the supersymmetric Kuramoto-Yokoyama Hamiltonian, and holons.

  2. Effect of synthesis route on the multiferroic properties of BiFeO3: A comparative study between solid state and sol–gel methods

    International Nuclear Information System (INIS)

    Suresh, Pittala; Srinath, S.

    2015-01-01

    Polycrystalline BiFeO 3 (BFO) powder was prepared through optimized solid state (SS) and sol–gel (SG) reaction methods. The effect of preparation routes on the crystal purity and multiferroic properties of the BFO was investigated. Sol–gel synthesis results almost a single-phase material at relatively lower temperatures while the solid-state method results into BFO with a small amount of Bi 2 Fe 4 O 9 secondary phase. The grain size of SG processed sample reduces to half the size of the one that is prepared by SS. Elemental analysis shows a stoichiometric Bi:Fe content for SG samples by restricting the Bi loss. In comparison with the SS samples, dielectric constant of SG samples exhibit higher values with Maxwell–Wagner type dielectric dispersion. A cusp at 50 K was seen in M–T curves for SS samples, for which no frequency dependence was observed in a.c susceptibility measurements ruling out the earlier predictions of spin glass nature in this system. M−H loops show a typical antiferromagnetic nature at 300 K while a weak ferromagnetic behavior is found at 10 K. A slight increase in H C and M r was observed for SG samples over SS. The improved properties of SG processed BFO makes it more promising for applications. - Highlights: • Optimized conditions to attain the BiFeO 3 with minimized impurities are reported. • The influence of the impurities on the dielectric, magnetic properties is reported. • Maxwell–Wagner relaxation is found for BiFeO 3 prepared by sol–gel technique. • a.c. susceptibility measurements ruled out the possibility of spin glass nature. • The anomalous behavior of H C with the temperature is reported

  3. Ferroelectrics principles, structure and applications

    CERN Document Server

    Merchant, Serena

    2014-01-01

    Ferroelectric physics is a theory on ferroelectric phase transition for explaining various related phenomena, which is different from dielectric physics. Ferroelectric materials are important functional materials for various applications such as NVRAMs, high energy density capacitors, actuators, MEMs, sonar sensors, microphones and scanning electron microscopes (SEM). This book investigates the dielectric, ferroelectric and energy storage properties of barium zirconate-titanate/barium calcium-titanate (BZT-BCT) based ceramic for high energy density capacitors. It also compares the energy storage capabilities of ceramic powders with polymer-ceramic nanocomposites; and discusses dielectric properties of ferroelectricity in composition distributions.

  4. Photoconductivity in BiFeO3 thin films

    Science.gov (United States)

    Basu, S. R.; Martin, L. W.; Chu, Y. H.; Gajek, M.; Ramesh, R.; Rai, R. C.; Xu, X.; Musfeldt, J. L.

    2008-03-01

    The optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17eV, a direct gap (2.667±0.005eV at 300K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO3 films under illumination from a 100mW /cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1Torr. Large increases in photoconductivity are observed in light.

  5. modified BiFeO3–BaTiO3

    Indian Academy of Sciences (India)

    based perovskite structures lead- free BiFeO3–BaTiO3 solid solutions are popularly studied due to the high Curie temperature (TC). It was reported that the BiFeO3–BaTiO3 system possessed high piezoelectric. ∗. Author for correspondence ...

  6. Nanoscale Control of Exchange Bias with BiFeO3 Thin Films

    NARCIS (Netherlands)

    Martin, Lane W.; Chu, Ying-Hao; Holcomb, Mikel B.; Huijben, Mark; Yu, Pu; Han, Shu-Jen; Lee, Donkoun; Wang, Shan X.; Ramesh, R.

    2008-01-01

    We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions − an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field

  7. Enhanced magnetic behavior, exchange bias effect, and dielectric property of BiFeO3 incorporated in (BiFeO30.50 (Co0.4Zn0.4Cu0.2 Fe2O40.5 nanocomposite

    Directory of Open Access Journals (Sweden)

    K. Mukhopadhyay

    2014-03-01

    Full Text Available Nanoparticles of BiFeO3 (BFO are incorporated in the nanocomposite of (BiFeO30.50 (Co0.4Zn0.4Cu0.2 Fe2O40.5, (BFO-CZCF and these are prepared by chemical route. The formation of pure crystallographic phase of each component (BFO and CZCF in the nanocomposite of BFO-CZCF has been confirmed by Rietveld analysis of the X-ray diffractograms using FULLPROF program. Morphology, average particle size and its distribution, crystallographic phase etc. are obtained from the high-resolution transmission electron microscopy of BFO-CZCF. Magnetic measurements of BFO-CZCF have been carried out to explore the modulation of magnetic behavior of BFO in BFO-CZCF. Interestingly, magnetization of BFO-CZCF has been drastically enhanced compared to that of the pristine BFO. An exchange bias effect is also observed in the M vs. H loops of BFO-CZCF recorded in field cooled and zero field cooled conditions, which suggest that nanoparticles of BFO (AFM are encapsulated by nanoparticles of CZCF (FM in BFO-CZCF. Thermal variation of dielectric constant of BFO-CZCF is recorded in the range of 300 to 1073 K and a ferroelectric to paraelectric transition is observed at ∼728 K. Enhanced magnetic property of BFO would quite interesting for this important multiferroic.

  8. Study on superstructure in ion co-doped BiFeO3 by using transmission electron microscopy

    Science.gov (United States)

    Pu, Shi-Zhou; Guo, Chao; Li, Mei-Ya; Chen, Zhen-Lian; Zou, Hua-Min

    2015-04-01

    La3+ and V5+ co-doped BiFeO3 ceramics are synthesized by rapid liquid sintering technique. The modulated structure in Bi0.85La0.15Fe0.97V0.03O3 is investigated by using transmission electron microscopy (TEM). Two kinds of superstructures are observed in the samples. One is the component modulated superstructure and twin-domain, which is generated by La3+ ordered substitution for Bi3+ and frequently appears. The chemical composition of the superstructure is explored by x-ray energy dispersive spectroscopy (EDS). The model of the ordered structure is proposed. Simulation based on the model is conducted. The second is the fluorite-type δ-Bi2O3 related superstructure. The relation between the ferroelectric property and the microstructure of the sample is also discussed. Project supported by the National Natural Science Foundation of China (Grant Nos. 51372174, 11074193, and 51132001) and the Fundamental Research Funds for the Central Universities.

  9. Molecular ferroelectrics: where electronics meet biology.

    Science.gov (United States)

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-12-28

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

  10. Ferroelectric Negative Capacitance Domain Dynamics

    OpenAIRE

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2017-01-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transien...

  11. Ferroelectric materials and their applications

    CERN Document Server

    Xu, Y

    2013-01-01

    This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable

  12. Structural, electrical and multiferroic characteristics of thermo-mechanically fabricated BiFeO3-(BaSr)TiO3 solid solutions

    Science.gov (United States)

    Behera, C.; Choudhary, R. N. P.; Das, Piyush R.

    2018-05-01

    A solid solution consisting of two perovskite compounds (BiFeO3 and (BaSr)TiO3) of chemical composition (Bi1/2Ba1/4Sr1/4)(Fe1/2Ti1/2)O3 has been fabricated in the low dimensional regime by thermo-mechanical (ball milling and heating) approach. The effect of particle size on the structural, micro-structural, relative permittivity, switching (ferroelectric and magnetic) and conduction phenomena of the material has been studied using various experimental techniques such as x-rays diffraction, transmission and scanning electron microscopy, ferroelectric and magnetic hysteresis, dynamic magneto-electric coupling measurement and impedance spectroscopy techniques. All the above extracted properties are found to be particle size dependent. The first order magneto-electric coupling constant is found to be 2.56, 6.6 and 8.7 mV cm‑1.Oe for 30, 60 and 90 h milled calcined (hmc) sample respectively. As the above micro/nano-material with different particle size, has a high relative dielectric constant and low tangent loss, it can be used for some multifunctional devices including capacity energy storage device in nano-electronics.

  13. Stress induced enhanced polarization in multilayer BiFeO3/BaTiO3 structure with improved energy storage properties

    Directory of Open Access Journals (Sweden)

    Savita Sharma

    2015-10-01

    Full Text Available Present work reports the fabrication of a multilayer (5-layer structure of BiFeO3(BFO/BaTiO3(BTO using spin-coating technique. The crystallographic structure, surface morphology and ferroelectric behavior of multilayer structure in metal-ferroelectric-metal capacitor have been studied. Le-Bail refinement of X-ray diffraction data revealed the formation of polycrystalline pure perovskite phase with induced stress. The values of remnant (Pr and saturation polarization (Ps for BFO/BTO multilayer structure are found to be 38.14 μC/cm2 and 71.54 μC/cm2 respectively, which are much higher than the corresponding values reported for bare BFO thin film. A large value of dielectric constant of 187 has been obtained for multilayer structure with a low leakage current density of 1.09 × 10−7 A/cm2 at applied bias of 10 V. The BFO/BTO multilayer structure favors the enhanced energy storage capacity as compared to bare BFO thin film with improved values of energy-density and charge-discharge efficiency as 121 mJ/cm3 and 59% respectively, suggesting futuristic energy storage applications.

  14. Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

    Science.gov (United States)

    Prasannakumara, R.; Naik, K. Gopalakrishna

    2018-05-01

    Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

  15. Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

    Directory of Open Access Journals (Sweden)

    Hao-Min Xu

    2016-11-01

    Full Text Available Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3 thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2. By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation.

  16. How to manipulate magnetic states of antiferromagnets

    Science.gov (United States)

    Song, Cheng; You, Yunfeng; Chen, Xianzhe; Zhou, Xiaofeng; Wang, Yuyan; Pan, Feng

    2018-03-01

    Antiferromagnetic materials, which have drawn considerable attention recently, have fascinating features: they are robust against perturbation, produce no stray fields, and exhibit ultrafast dynamics. Discerning how to efficiently manipulate the magnetic state of an antiferromagnet is key to the development of antiferromagnetic spintronics. In this review, we introduce four main methods (magnetic, strain, electrical, and optical) to mediate the magnetic states and elaborate on intrinsic origins of different antiferromagnetic materials. Magnetic control includes a strong magnetic field, exchange bias, and field cooling, which are traditional and basic. Strain control involves the magnetic anisotropy effect or metamagnetic transition. Electrical control can be divided into two parts, electric field and electric current, both of which are convenient for practical applications. Optical control includes thermal and electronic excitation, an inertia-driven mechanism, and terahertz laser control, with the potential for ultrafast antiferromagnetic manipulation. This review sheds light on effective usage of antiferromagnets and provides a new perspective on antiferromagnetic spintronics.

  17. Exchange bias in diluted-antiferromagnet/antiferromagnet bilayers

    International Nuclear Information System (INIS)

    Mao, Zhongquan; Zhan, Xiaozhi; Chen, Xi

    2015-01-01

    The hysteresis-loop properties of a diluted-antiferromagnetic (DAF) layer exchange coupling to an antiferromagnetic (AF) layer are investigated by means of numerical simulations. Remarkable loop shift and coercivity enhancement are observed in such DAF/AF bilayers, while they are absent in the uncoupled DAF single layer. The influences of pinned domains, dilution, cooling field and DAF layer thickness on the loop shift are investigated systematically. The result unambiguously confirms an exchange bias (EB) effect in the DAF/AF bilayers. It also reveals that the EB effect originates from the pinned AF domains within the DAF layer. In contrast to conventional EB systems, frozen uncompensated spins are not found at the interface of the AF pinning layer. (paper)

  18. Ferroelectricity the fundamentals collection

    CERN Document Server

    Jimenez, Basilio

    2008-01-01

    This indispensable collection of seminal papers on ferroelectricity provides an overview over almost a hundred years of basic and applied research. Containing historic contributions from renowned authors, this book presents developments in an area of science that is still rapidly growing. Although primarily aimed at scientists and academics involved in research, this will also be of use to students as well as newcomers to the field.

  19. Unidirectional THz radiation propagation in BiFeO3

    Science.gov (United States)

    Room, Toomas

    The mutual coupling between magnetism and electricity present in many multiferroic materials permit the magnetic control of the electric polarization and the electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to write a magnetic state current-free by an electric voltage would provide a huge technological advantage. However, ME coupling changes the low energy electrodynamics of these materials in unprecedented way - optical ME effects give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. The transparent direction can be switched with dc magnetic or electric field, thus opening up new possibilities to manipulate the propagation of electromagnetic waves in multiferroic materials. We studied the unidirectional transmission of THz radiation in BiFeO3 crystals, the unique multiferroic compound offering a real potential for room temperature applications. The electrodynamics of BiFeO3 at 1THz and below is dominated by the spin wave modes of cycloidal spin order. We found that the optical magnetoelectric effect generated by spin waves in BiFeO3 is robust enough to cause considerable nonreciprocal directional dichroism in the GHz-THz range even at room temperature. The supporting theory attributes the observed unidirectional transmission to the spin-current-driven dynamic ME effect. Our work demonstrates that the nonreciprocal directional dichroism spectra of low energy excitations and their theoretical analysis provide microscopic model of ME couplings in multiferroic materials. Recent THz spectroscopy studies of multiferroic materials are an important step toward the realization of optical diodes, devices which transmit light in one but not in the opposite direction.

  20. Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

    KAUST Repository

    Jungwirth, T.

    2017-05-30

    This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets.

  1. Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

    KAUST Repository

    Jungwirth, T.; Sinova, J.; Manchon, Aurelien; Marti, X.; Wunderlich, J.; Felser, C.

    2017-01-01

    This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets.

  2. Spin Structure Analyses of Antiferromagnets

    International Nuclear Information System (INIS)

    Chung, Jae Ho; Song, Young Sang; Lee, Hak Bong

    2010-05-01

    We have synthesized series of powder sample of incommensurate antiferromagnetic multiferroics, (Mn, Co)WO 4 and Al doped Ba 0.5 Sr 1.5 Zn 2 Fe 12 O 22 , incommensurate antiferromagnetic multiferroics. Their spin structure was studied by using the HRPD. In addition, we have synthesized series of crystalline samples of incommensurate multiferroics, (Mn, Co)WO 4 and olivines. Their spin structure was investigated using neutron diffraction under high magnetic field. As a result, we were able to draw the phase diagram of (Mn, Co)WO 4 as a function of composition and temperature. We learned the how the spin structure changes with increased ionic substitution. Finally we have drawn the phase diagram of the multicritical olivine Mn2SiS4/Mn2GeS4 as a function of filed and temperature through the spin structure studies

  3. Nanoscale organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

    2014-01-01

    Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

  4. Structural, spectroscopic, and dielectric characterizations of Mn-doped 0.67BiFeO3-0.33BaTiO3 multiferroic ceramics

    KAUST Repository

    Hang, Qiming

    2013-09-07

    0.67BiFeO3-0.33BaTiO3 multiferroic ceramics doped with x mol% MnO2 (x = 2–10) were synthesized by solid-state reaction. The formation of a perovskite phase with rhombohedral symmetry was confirmed by X-ray diffraction (XRD). The average grain sizes were reduced from 0.80 μm to 0.50 μm as increasing the Mn-doped levels. Single crystalline nature of the grains was revealed by high-resolution transmission electron microscopy (HRTEM) images and electron diffraction patterns. Polar nano-sized ferroelectric domains with an average size of 9 nm randomly distributed in the ceramic samples were revealed by TEM images. Ferroelectric domain lamellae (71° ferroelectric domains) with an average width of 5 nm were also observed. Vibrational modes were examined by Raman spectra, where only four Raman peaks at 272 cm−1 (E-4 mode), 496 cm−1 (A 1-4 mode), 639 cm−1, and 1338 cm−1 were observed. The blue shifts in the E-4 and A 1-4 Raman mode frequencies were interpreted by a spring oscillator model. The dieletric constants of the present ceramics as a function of the Mn-doped levels exhibited a V-typed curve. They were in the range of 350–700 measured at 103 Hz, and the corresponding dielectric losses were in range of 0.43–0.96, approaching to 0.09 at 106 Hz.

  5. Structural, spectroscopic, and dielectric characterizations of Mn-doped 0.67BiFeO3-0.33BaTiO3 multiferroic ceramics

    KAUST Repository

    Hang, Qiming; Zhou, Wenke; Zhu, Xinhua; Zhu, Jianmin; Liu, Zhiguo; Al-Kassab, Talaat

    2013-01-01

    0.67BiFeO3-0.33BaTiO3 multiferroic ceramics doped with x mol% MnO2 (x = 2–10) were synthesized by solid-state reaction. The formation of a perovskite phase with rhombohedral symmetry was confirmed by X-ray diffraction (XRD). The average grain sizes were reduced from 0.80 μm to 0.50 μm as increasing the Mn-doped levels. Single crystalline nature of the grains was revealed by high-resolution transmission electron microscopy (HRTEM) images and electron diffraction patterns. Polar nano-sized ferroelectric domains with an average size of 9 nm randomly distributed in the ceramic samples were revealed by TEM images. Ferroelectric domain lamellae (71° ferroelectric domains) with an average width of 5 nm were also observed. Vibrational modes were examined by Raman spectra, where only four Raman peaks at 272 cm−1 (E-4 mode), 496 cm−1 (A 1-4 mode), 639 cm−1, and 1338 cm−1 were observed. The blue shifts in the E-4 and A 1-4 Raman mode frequencies were interpreted by a spring oscillator model. The dieletric constants of the present ceramics as a function of the Mn-doped levels exhibited a V-typed curve. They were in the range of 350–700 measured at 103 Hz, and the corresponding dielectric losses were in range of 0.43–0.96, approaching to 0.09 at 106 Hz.

  6. Transition metal modified bulk BiFeO3 with improved magnetization and linear magneto-electric coupling

    International Nuclear Information System (INIS)

    Puli, Venkata Sreenivas; Kumar, A.; Panwar, N.; Panwar, I.C.; Katiyar, R.S.

    2011-01-01

    Highlights: → Present composition (Bi 0.9 Sm 0.10 Fe 0.95 Co 0.05 O 3 (BSFCO) have shown very high magnetization compared to parent BFO. → The magnetic hysteresis loops are well saturated with high saturation magnetization 2.89 emu/gm (unpoled and unleached) and 2.18 emu/gm (poled and unleached) respectively. → Converse ME coupling were found 0.8e-10 s m -1 (H||E) and 0.6-0.8 x 10 -10 s m -1 (H-perpendicular E) which are better than the single phase multiferroic obeying linear ME coupling. - Abstract: At present BiFeO 3 (BFO) is the most attractive and sole example, which possesses low magnetization value, high leakage current and low polarization in ceramic form. Single-phase room temperature multiferroics are rare in nature. This paper deals with the improved magnetic and observed linear magneto-electric coupling in Co and Sm co-doped BiFeO 3 ceramics synthesized by sol-gel process at low temperature ∼600 deg. C. As synthesized Bi 0.9 Sm 0.10 Fe 0.95 Co 0.05 O 3 (BSFCO) showed high impurities phases (20%) over wide range of calcination temperatures. Impurity phases reduced drastically from 20% to 5% after leaching with nitric acid. However the electrical and the magnetic properties were almost the same for both phases. Well-defined magnetic hysteresis with high magnetic moment was found at room temperature. Ferroelectric polarization studies demonstrated similar values and shape as reported in literature for the pure bulk BFO. Linear magneto-electric (ME) coupling and weak ME coefficient (α) ∼ 0.6 e-10 s m -1 were observed in the co-doped BFO. The origin of the strong ferromagnetic property in our samples may be due to the presence of rare earth and transition metal ions at the lattice sites of BFO or due to impurity phase, since we have not seen any change in magnetization with reduction of impurity phase the later effect is more unlikely.

  7. Enhanced photocatalytic property of BiFeO_3/N-doped graphene composites and mechanism insight

    International Nuclear Information System (INIS)

    Li, Pai; Li, Lei; Xu, Maji; Chen, Qiang; He, Yunbin

    2017-01-01

    Highlights: • A hydrothermal process was used to prepare BiFeO_3/N-doped graphene composites. • BiFeO_3/N-doped graphene exhibits superior photocatalytic activity and stability. • The energy band of BiFeO_3 bends downward by ∼1.0 eV at the composite interface. • Downward band bending leads to rapid electron transfer at the composite interface. • Holes and ·OH are predominant active species in the photo-degradation process. - Abstract: A series of BiFeO_3/(N-doped) graphene composites are prepared by a facile hydrothermal method. BiFeO_3/N-doped graphene shows photocatalytic performance superior to that of BiFeO_3/graphene and pristine BiFeO_3. The enhanced photo-degradation performance of BiFeO_3/N-doped graphene are mainly attributable to the improved light absorbance of the composite, abundant active adsorption sites and high electrical charge mobility of N-doped graphene, and the downward band bending of BiFeO_3 at the composite interface. In particular, X-ray photoelectron spectroscopy analyses reveal that the electron energy band of BiFeO_3 is downward bent by 1.0 eV at the interface of BiFeO_3/N-doped graphene, because of different work functions of both materials. This downward band bending facilitates the transfer of photogenerated electrons from BiFeO_3 to N-doped graphene and prompts the separation of photo-generated electron-hole pairs, leading eventually to the enhanced photocatalytic performance.

  8. Enhanced magnetic properties of chemical solution deposited BiFeO3 thin film with ZnO buffer layer

    International Nuclear Information System (INIS)

    Rajalakshmi, R.; Kambhala, Nagaiah; Angappane, S.

    2012-01-01

    Highlights: ► Enhanced magnetization of BiFeO 3 is important for strong magnetoelectric coupling. ► BiFeO 3 film with ZnO buffer layer was successfully synthesized by chemical method. ► Magnetization of BiFeO 3 has increased by more than 10 times with ZnO buffer layer. ► A mechanism for enhancement in ferromagnetism of BiFeO 3 film is proposed. - Abstract: Magnetic properties of BiFeO 3 films deposited on Si substrates with and without ZnO buffer layer have been studied in this work. We adopted the chemical solution deposition method for the deposition of BiFeO 3 as well as ZnO films. The x-ray diffraction measurements on the deposited films confirm the formation of crystalline phase of BiFeO 3 and ZnO films, while our electron microscopy measurements help to understand the morphology of few micrometers thick films. It is found that the deposited ZnO film exhibit a hexagonal particulate surface morphology, whereas BiFeO 3 film fully covers the ZnO surface. Our magnetic measurements reveal that the magnetization of BiFeO 3 has increased by more than ten times in BiFeO 3 /ZnO/Si film compared to BiFeO 3 /Si film, indicating the major role played by ZnO buffer layer in enhancing the magnetic properties of BiFeO 3 , a technologically important multiferroic material.

  9. Spin diffusion and torques in disordered antiferromagnets

    KAUST Repository

    Manchon, Aurelien

    2017-02-01

    We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

  10. Spin diffusion and torques in disordered antiferromagnets

    KAUST Repository

    Manchon, Aurelien

    2017-01-01

    We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

  11. Photocatalytic and Magnetic Behaviors Observed in BiFeO3 Nanofibers by Electrospinning

    Directory of Open Access Journals (Sweden)

    Xuehui Zhang

    2013-01-01

    Full Text Available Perovskite-type BiFeO3 nanofibers with wave nodes-like morphology were prepared by electrospinning. The nanofibers show a highly enhanced visible-light-active photocatalytic property. The results also showed that the diameter could affect the band gap and photocatalytic performances of nanofibers. Additionally, weak ferromagnetic behaviors can be observed at room temperature, which should be correlated to the size-confinement effect on the magnetic ordering of BiFeO3 structure.

  12. Fabrication, Characterization, Properties, and Applications of Low-Dimensional BiFeO3 Nanostructures

    Directory of Open Access Journals (Sweden)

    Heng Wu

    2014-01-01

    Full Text Available Low-dimensional BiFeO3 nanostructures (e.g., nanocrystals, nanowires, nanotubes, and nanoislands have received considerable attention due to their novel size-dependent properties and outstanding multiferroic properties at room temperature. In recent years, much progress has been made both in fabrications and (microstructural, electrical, and magnetic in characterizations of BiFeO3 low-dimensional nanostructures. An overview of the state of art in BiFeO3 low-dimensional nanostructures is presented. First, we review the fabrications of high-quality BiFeO3 low-dimensional nanostructures via a variety of techniques, and then the structural characterizations and physical properties of the BiFeO3 low-dimensional nanostructures are summarized. Their potential applications in the next-generation magnetoelectric random access memories and photovoltaic devices are also discussed. Finally, we conclude this review by providing our perspectives to the future researches of BiFeO3 low-dimensional nanostructures and some key problems are also outlined.

  13. Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

    KAUST Repository

    Yao, Yingbang

    2012-06-01

    (001)-oriented BiFeO 3 (BFO) thin films were grown on Sr xCa 1-xRuO 3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO 3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.

  14. Spiral phases of doped antiferromagnets

    International Nuclear Information System (INIS)

    Shraiman, B.I.; Siggia, E.D.

    1990-01-01

    The dipole density field describing the holls in a doped antiferromagnet is considered for law hole density in the semiclassical limit. This yields a phase in which the order parameter is planar and spirals round a fixed direction. The single spiral state breaks the continuous spin rotational symmetry and exhibits long-range order at zero temperature. In it there is a global spin direction as rotation axis. The double spiral state, in which there are two perpendicular directions, is isotropic in both spin and real space. Several results of microscopic calculations, carried out to understand the electronic states, quantum fluctuations, lattice effects and normal mode dynamics, are recapitulated. 8 refs

  15. Role of an ultrathin platinum seed layer in antiferromagnet-based perpendicular exchange coupling and its electrical manipulation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Y., E-mail: wangyy@buaa.edu.cn [Department of Physics, Beihang University, Beijing 100191 (China); Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Song, C., E-mail: songcheng@mail.tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhang, J.Y. [Department of Physics, Beihang University, Beijing 100191 (China); Pan, F. [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2017-04-15

    The requirement for low-power consumption advances the development of antiferromagnetic (AFM) spintronics manipulated by electric fields. Here we report an electrical manipulation of metallic AFM moments within IrMn/[Co/Pt] by interface engineering, where ultrathin non-magnetic metals are highlighted between IrMn and ferroelectric substrates. Ultrathin Pt seed layers are proved to be vital in elevating the blocking temperature and enhancing the perpendicular exchange coupling through modulating the domain structures of as-prepared IrMn AFM. Further electrical manipulations of perpendicular magnetic anisotropy crucially verify the indispensable role of pre-deposited ultrathin Pt layers in modulating IrMn antiferromagnetic moments, which is confirmed by the intimate correlation between the electrically manipulating AFM and improving its blocking temperature. Instead of immediate contact between IrMn AFM and ferroelectric substrates in a conventional way, interface engineering by adopting ultrathin seed layers here adds a new twist to the electrical modulation of AFM metals. This would provide scientific basis on how to manipulate AFM moments and optimize the design of practical AFM spintronics. - Highlights: • An alternative for manipulating antiferromagnet by interface engineering is provided. • Ultrathin Pt seed layers are vital in elevating the blocking temperature of IrMn. • Perpendicular exchange coupling in IrMn/[Co/Pt] can be modulated by seed layers. • Ultrathin Pt seed layers enable electrical control of perpendicular exchange coupling.

  16. Role of an ultrathin platinum seed layer in antiferromagnet-based perpendicular exchange coupling and its electrical manipulation

    International Nuclear Information System (INIS)

    Wang, Y.Y.; Song, C.; Zhang, J.Y.; Pan, F.

    2017-01-01

    The requirement for low-power consumption advances the development of antiferromagnetic (AFM) spintronics manipulated by electric fields. Here we report an electrical manipulation of metallic AFM moments within IrMn/[Co/Pt] by interface engineering, where ultrathin non-magnetic metals are highlighted between IrMn and ferroelectric substrates. Ultrathin Pt seed layers are proved to be vital in elevating the blocking temperature and enhancing the perpendicular exchange coupling through modulating the domain structures of as-prepared IrMn AFM. Further electrical manipulations of perpendicular magnetic anisotropy crucially verify the indispensable role of pre-deposited ultrathin Pt layers in modulating IrMn antiferromagnetic moments, which is confirmed by the intimate correlation between the electrically manipulating AFM and improving its blocking temperature. Instead of immediate contact between IrMn AFM and ferroelectric substrates in a conventional way, interface engineering by adopting ultrathin seed layers here adds a new twist to the electrical modulation of AFM metals. This would provide scientific basis on how to manipulate AFM moments and optimize the design of practical AFM spintronics. - Highlights: • An alternative for manipulating antiferromagnet by interface engineering is provided. • Ultrathin Pt seed layers are vital in elevating the blocking temperature of IrMn. • Perpendicular exchange coupling in IrMn/[Co/Pt] can be modulated by seed layers. • Ultrathin Pt seed layers enable electrical control of perpendicular exchange coupling.

  17. The microscopic model of BiFeO3

    Science.gov (United States)

    Fishman, R. S.

    2018-05-01

    Many years and great effort have been spent constructing the microscopic model for the room temperature multiferroic BiFeO3. However, earlier models implicitly assumed that the cycloidal wavevector q was confined to one of the three-fold symmetric axes in the hexagonal plane normal to the electric polarization. Because recent measurements indicate that q can be rotated by a magnetic field, it is essential to properly treat the anisotropy that confines q at low fields. We propose that the anisotropy energy -K3S6sin6 θ cos 6 ϕ confines the wavevectors q to the three-fold axis ϕ = 0 and ± 2 π / 3 within the hexagonal plane with θ = π / 2 .

  18. Ferroelectric capacitor with reduced imprint

    Science.gov (United States)

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  19. Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films.

    Science.gov (United States)

    Kim, Tae Heon; Yoon, Jong-Gul; Baek, Seung Hyub; Park, Woong-kyu; Yang, Sang Mo; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Noh, Tae Won

    2015-07-01

    Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

  20. Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films

    Science.gov (United States)

    Heon Kim, Tae; Yoon, Jong-Gul; Hyub Baek, Seung; Park, Woong-Kyu; Mo Yang, Sang; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Won Noh, Tae

    2015-07-01

    Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

  1. Origin of Ferrimagnetism and Ferroelectricity in Room-Temperature Multiferroic ɛ -Fe2O3

    Science.gov (United States)

    Xu, K.; Feng, J. S.; Liu, Z. P.; Xiang, H. J.

    2018-04-01

    Exploring and identifying room-temperature multiferroics is critical for developing better nonvolatile random-access memory devices. Recently, ɛ -Fe2O3 was found to be a promising room-temperature multiferroic with a large polarization and magnetization. However, the origin of the multiferroicity in ɛ -Fe2O3 is still puzzling. In this work, we perform density-functional-theory calculations to reveal that the spin frustration between tetrahedral-site Fe3 + spins gives rise to the unexpected ferrimagnetism. For the ferroelectricity, we identify a low-energy polarization switching path with an energy barrier of 85 meV /f .u . by performing a stochastic surface walking simulation. The switching of the ferroelectric polarization is achieved by swapping the tetrahedral Fe ion with the octahedral Fe ion, different from the usual case (e.g., in BaTiO3 and BiFeO3 ) where the coordination number remains unchanged after the switching. Our results not only confirm that ɛ -Fe2O3 is a promising room-temperature multiferroic but also provide guiding principles to design high-performance multiferroics.

  2. Programmable ferroelectric tunnel memristor

    Directory of Open Access Journals (Sweden)

    Andy eQuindeau

    2014-02-01

    Full Text Available We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8]O[3] film sandwiched between La[0.7]Sr[0.3]MnO[3] and cobalt electrodes obeys the Kolmogorov-Avrami-Ishibashi model for bidimensional growth with a characteristic switching time in the order of 10^-7 seconds. The analytical description of switching kinetics allows us to develop a characteristic transfer function that has only one parameter viz. the characteristic switching time and fully predicts the resistive states of this type of memristor.

  3. Synthesis, microstructure and properties of BiFeO3-based multiferroic materials: A review

    Directory of Open Access Journals (Sweden)

    Bernardo, M. S.

    2014-02-01

    Full Text Available BiFeO3-based materials are currently one of the most studied multiferroics due to their possible applications at room temperature. However, among the large number of published papers there is much controversy. For example, possibility of synthesizing a pure BiFeO3 phase is still source of discussion in literature. Not even the nature of the binary Bi2O3-Fe2O3 diagram has been clarified yet. The difficulty in controlling the formation of parasite phases reaches the consolidation step. Accordingly, the sintering conditions must be carefully determined both to get dense materials and to avoid bismuth ferrite decomposition. However, the precise conditions to attain dense bismuth ferrite materials are frequently contradictory among different works. As a consequence, the reported properties habitually result opposed and highly irreproducible hampering the preparation of BiFeO3 materials suitable for practical applications. In this context, the purpose of the present review is to summarize the main researches regarding BiFeO3 synthesis, microstructure and properties in order to provide an easier understanding of these materials.Los materiales basados en BiFeO3 son en la actualidad uno de los multiferroicos más estudiados debido a sus posibles aplicaciones a temperatura ambiente. Sin embargo, entre la multitud de trabajos publicados referentes a estos materiales existe mucha controversia. Por ejemplo, la posibilidad de sintetizar una fase BiFeO3 pura es aún objeto de discusión en la bibliografía y la naturaleza de los diagramas de fases del sistema Bi2O3-Fe2O3 aún no está clara. La dificultad para controlar las fases parásitas se extiende al proceso de consolidación por lo que las condiciones de sinterización deben ser cuidadosamente controladas para obtener materiales densos y al mismo tiempo evitar la descomposición de la ferrita. No obstante, las condiciones precisas para obtener materiales densos de BiFeO3 son frecuentemente

  4. Ferroelectric ferrimagnetic LiFe2F6 : Charge-ordering-mediated magnetoelectricity

    Science.gov (United States)

    Lin, Ling-Fang; Xu, Qiao-Ru; Zhang, Yang; Zhang, Jun-Jie; Liang, Yan-Ping; Dong, Shuai

    2017-12-01

    Trirutile-type LiFe2F6 is a charge-ordered material with an Fe2 +/Fe3 + configuration. Here, its physical properties, including magnetism, electronic structure, phase transition, and charge ordering, are studied theoretically. On one hand, the charge ordering leads to improper ferroelectricity with a large polarization. On the other hand, its magnetic ground state can be tuned from the antiferromagnetic to ferrimagnetic by moderate compressive strain. Thus, LiFe2F6 can be a rare multiferroic with both large magnetization and polarization. Most importantly, since the charge ordering is the common ingredient for both ferroelectricity and magnetization, the net magnetization may be fully switched by flipping the polarization, rendering intrinsically strong magnetoelectric effects and desirable functions.

  5. Containerless solidification of BiFeO3 oxide under microgravity

    Science.gov (United States)

    Yu, Jianding; Arai, Yasutomo; Koshikawa, Naokiyo; Ishikawa, Takehito; Yoda, Shinichi

    1999-07-01

    Containerless solidification of BiFeO3 oxide has been carried out under microgravity with Electrostatic Levitation Furnace (ELF) aboard on the sounding rocket (TR-IA). It is a first containerless experiment using ELF under microgravity for studying the solidification of oxide insulator material. Spherical BiFeO3 sample with diameter of 5mm was heated by two lasers in oxygen and nitrogen mixing atmosphere, and the sample position by electrostatic force under pinpoint model and free drift model. In order to compare the solidification behavior in microgravity with on ground, solidification experiments of BiFeO3 in crucible and drop tube were carried out. In crucible experiment, it was very difficult to get single BiFeO3 phase, because segregation of Fe2O3 occured very fast and easily. In drop tube experiment, fine homogeneous BiFeO3 microstructure was obtained in a droplet about 300 μm. It implies that containerless processing can promote the phase selection in solidification. In microgravity experiment, because the heating temperature was lower than that of estimated, the sample was heated into Fe2O3+liquid phase region. Fe2O3 single crystal grew on the surface of the spherical sample, whose sample was clearly different from that observed in ground experiments.

  6. Synthesis of ferroelectric nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Roervik, Per Martin

    2008-12-15

    The increasing miniaturization of electric and mechanical components makes the synthesis and assembly of nanoscale structures an important step in modern technology. Functional materials, such as the ferroelectric perovskites, are vital to the integration and utility value of nanotechnology in the future. In the present work, chemical methods to synthesize one-dimensional (1D) nanostructures of ferroelectric perovskites have been studied. To successfully and controllably make 1D nanostructures by chemical methods it is very important to understand the growth mechanism of these nanostructures, in order to design the structures for use in various applications. For the integration of 1D nanostructures into devices it is also very important to be able to make arrays and large-area designed structures from the building blocks that single nanostructures constitute. As functional materials, it is of course also vital to study the properties of the nanostructures. The characterization of properties of single nanostructures is challenging, but essential to the use of such structures. The aim of this work has been to synthesize high quality single-crystalline 1D nanostructures of ferroelectric perovskites with emphasis on PbTiO3 , to make arrays or hierarchical nanostructures of 1D nanostructures on substrates, to understand the growth mechanisms of the 1D nanostructures, and to investigate the ferroelectric and piezoelectric properties of the 1D nanostructures. In Paper I, a molten salt synthesis route, previously reported to yield BaTiO3 , PbTiO3 and Na2Ti6O13 nanorods, was re-examined in order to elucidate the role of volatile chlorides. A precursor mixture containing barium (or lead) and titanium was annealed in the presence of NaCl at 760 degrees Celsius or 820 degrees Celsius. The main products were respectively isometric nanocrystalline BaTiO3 and PbTiO3. Nanorods were also detected, but electron diffraction revealed that the composition of the nanorods was

  7. Ferroelectricity in undoped hafnium oxide

    International Nuclear Information System (INIS)

    Polakowski, Patrick; Müller, Johannes

    2015-01-01

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

  8. Ferroelectric negative capacitance domain dynamics

    Science.gov (United States)

    Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

    2018-05-01

    Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

  9. Dynamic rotor mode in antiferromagnetic nanoparticles

    DEFF Research Database (Denmark)

    Lefmann, Kim; Jacobsen, H.; Garde, J.

    2015-01-01

    We present experimental, numerical, and theoretical evidence for an unusual mode of antiferromagnetic dynamics in nanoparticles. Elastic neutron scattering experiments on 8-nm particles of hematite display a loss of diffraction intensity with temperature, the intensity vanishing around 150 K...

  10. Antiferromagnetic resonance excited by oscillating electric currents

    Science.gov (United States)

    Sluka, Volker

    2017-12-01

    In antiferromagnetic materials the order parameter exhibits resonant modes at frequencies that can be in the terahertz range, making them interesting components for spintronic devices. Here, it is shown that antiferromagnetic resonance can be excited using the inverse spin-Hall effect in a system consisting of an antiferromagnetic insulator coupled to a normal-metal waveguide. The time-dependent interplay between spin torque, ac spin accumulation, and magnetic degrees of freedom is studied. It is found that the dynamics of the antiferromagnet affects the frequency-dependent conductivity of the normal metal. Further, a comparison is made between spin-current-induced and Oersted-field-induced excitation under the condition of constant power injection.

  11. Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method

    Science.gov (United States)

    Gupta, Shashaank; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai; Bansal, Vipul; Bhargava, Suresh K.; Peng, Ju Lin; Garg, Ashish

    2011-07-01

    We report an unusual behavior observed in (BiFeO3)1- x -(PbTiO3) x (BF- xPT) thin films prepared using a multilayer chemical solution deposition method. Films of different compositions were grown by depositing several bilayers of BF and PT precursors of varying BF and PT layer thicknesses followed by heat treatment in air. X-ray diffraction showed that samples of all compositions show mixing of two compounds resulting in a single-phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk compositions, samples show a monoclinic (MA-type) structure suggesting disappearance of the morphotropic phase boundary (MPB) at x=0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of the remanent polarization at the MPB, as shown by the ferroelectric measurements. Magnetic measurements showed an increase in the magnetization of the samples with increasing BF content. Significant magnetization in the samples indicates melting of spin spirals in the BF- xPT films, arising from a random distribution of iron atoms. Absence of Fe2+ ions was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that thin film processing methodology significantly changes the structural evolution, in contrast to predictions from the equilibrium phase diagram, besides modifying the functional characteristics of the BP- xPT system dramatically.

  12. Control of oxygen octahedral rotation in BiFeO3 films using modulation of SrRuO3 bottom electrode layer

    Science.gov (United States)

    Lee, Sungsu; Jo, Ji Young

    2015-03-01

    Oxygen octahedral rotation of multiferroic BiFeO3 (BFO) has attracted great attention due to changes of electrical and magnetic properties. Coupling of octahedral rotation in BFO-bottom electrode layer interface remains unexplored. Recently, there have been reported the control of octahedral rotation in SrRuO3 (SRO) film on SrTiO3 (001) substrate by coherently controlling the oxygen pressure during growth and interfacial coupling. Here we demonstrate that the octahedral rotation of BFO film is changed using tetragonal a0a0c- tilted-SRO bottom electrodes. In this work, BFO/SRO heterostructure is fabricated to SrTiO3 (001) single crystal substrates by pulsed laser deposition at different oxygen partial pressures. The rotation pattern of FeO6 and the structural symmetry are identified from half-integer reflections using high-resolution X-ray diffraction. The effects depending on octahedral tilting of BFO films on the magnetic and ferroelectric properties will be presented.

  13. Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

    International Nuclear Information System (INIS)

    Ostos, C.; Raymond, O.; Siqueiros, J. M.; Suarez-Almodovar, N.; Bueno-Baques, D.; Mestres, L.

    2011-01-01

    In this study, (011)-highly oriented Sr, Nb co-doped BiFeO 3 (BFO) thin films were successfully grown on SrRuO 3 /Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of ≅5.3 nm and average grain sizes of ≅65-70 nm for samples with different thicknesses. Remanent polarization values (2P r ) of 54 μC cm -2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe 3+ /Fe 2+ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO 3 /Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

  14. Magnon Spin Nernst Effect in Antiferromagnets

    Science.gov (United States)

    Zyuzin, Vladimir A.; Kovalev, Alexey A.

    2016-11-01

    We predict that a temperature gradient can induce a magnon-mediated spin Hall response in an antiferromagnet with nontrivial magnon Berry curvature. We develop a linear response theory which gives a general condition for a Hall current to be well defined, even when the thermal Hall response is forbidden by symmetry. We apply our theory to a honeycomb lattice antiferromagnet and discuss a role of magnon edge states in a finite geometry.

  15. Magnon Spin Nernst Effect in Antiferromagnets.

    Science.gov (United States)

    Zyuzin, Vladimir A; Kovalev, Alexey A

    2016-11-18

    We predict that a temperature gradient can induce a magnon-mediated spin Hall response in an antiferromagnet with nontrivial magnon Berry curvature. We develop a linear response theory which gives a general condition for a Hall current to be well defined, even when the thermal Hall response is forbidden by symmetry. We apply our theory to a honeycomb lattice antiferromagnet and discuss a role of magnon edge states in a finite geometry.

  16. Pressure-induced phase transitions of multiferroic BiFeO3

    OpenAIRE

    XiaoLi, Zhang; Ye, Wu; Qian, Zhang; JunCai, Dong; Xiang, Wu; Jing, Liu; ZiYu, Wu; DongLiang, Chen

    2013-01-01

    Pressure-induced phase transitions of multiferroic BiFeO3 have been investigated using synchrotron radiation X-ray diffraction with diamond anvil cell technique at room temperature. Present experimental data clearly show that rhombohedral (R3c) phase of BiFeO3 first transforms to monoclinic (C2/m) phase at 7 GPa, then to orthorhombic (Pnma) phase at 11 GPa, which is consistent with recent theoretical ab initio calculation. However, we observe another peak at 2{\\theta}=7{\\deg} in the pressure ...

  17. Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

    KAUST Repository

    Yang, Yang

    2014-11-01

    Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences. The symmetries of the fundamental Raman modes in 50-700 cm-1 were identified based on group theory. The symmetries of the high order Raman modes in 900-1500 cm-1 of BiFeO3 are determined for the first time, which can provide strong clarifications to the symmetry of the fundamental peaks in 400-700 cm-1 in return. Moreover, the lattice structures of BiFeO3 films are identified consequently on the basis of Raman spectroscopy. BiFeO3 films on SrRuO3 coated SrTiO3 (0 0 1) substrate, CaRuO3 coated SrTiO3 (0 0 1) substrate and tin-doped indium oxide substrate are found to be in the rhombohedral structure, while BiFeO3 film on SrRuO3 coated Nb: SrTiO3 (0 0 1) substrate is in the monoclinic structure. Our results suggest that polarized Raman spectroscopy would be a feasible tool to study the lattice structure of BiFeO3 films.

  18. Graded ferroelectrics, transpacitors and transponents

    CERN Document Server

    Mantese, Joseph V

    2005-01-01

    The text details the experimental and theoretical aspects of newly emerging ferroelectric devices, and their extensions to other ferroic systems such as: ferromagnetics, ferroelastics, piezoelectrics, etc. The theory and experimental results pertaining to non-homogeneous active ferroic devices and structures are presented.

  19. Surface Acoustic Waves in ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Tarasenko A., Nataliya; Jastrabík, Lubomír; Tarasenko, Alexander

    2004-01-01

    Roč. 298, - (2004), s. 325-333 ISSN 0015-0193 R&D Projects: GA AV ČR IBS1010203 Keywords : Rayleigh waves * ferroelectric films * phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.517, year: 2004

  20. Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

    KAUST Repository

    Yin, Y. W.

    2015-03-03

    As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

  1. Electric and Magnetic Properties of Sputter Deposited BiFeO3 Films

    Directory of Open Access Journals (Sweden)

    N. Siadou

    2013-01-01

    Full Text Available Polycrystalline BiFeO3 films have been magnetron sputter deposited at room temperature and subsequently heat-treated ex situ at temperatures between 400 and 700°C. The deposition was done in pure Ar atmosphere, as the use of oxygen-argon mixture was found to lead to nonstoichiometric films due to resputtering effects. At a target-to-substrate distance d=2′′ the BiFeO3 structure can be obtained in larger range process gas pressures (2–7 mTorr but the films do not show a specific texture. At d=6′′ codeposition from BiFeO3 and Bi2O3 has been used. Films sputtered at low rate tend to grow with the (001 texture of the pseudo-cubic BiFeO3 structure. As the film structure does not depend on epitaxy similar results are obtained on different substrates. A result of the volatility of Bi, Bi rich oxide phases occur after heat treatment at high temperatures. A Bi2SiO5 impurity phase forms on the substrate side, and does not affect the properties of the main phase. Despite the deposition on amorphous silicon oxide substrate weak ferromagnetism phenomena and displaced loops have been observed at low temperatures showing that their origin is not strain. Ba, La, Ca, and Sr doping suppress the formation of impurity phases and leakage currents.

  2. Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

    NARCIS (Netherlands)

    Domingo, N.; Farokhipoor, S.; Santiso, J.; Noheda, B.; Catalan, G.

    2017-01-01

    We measure the magnetotransport properties of individual 71 degrees domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of

  3. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field

  4. Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

    Science.gov (United States)

    Jiang, Jun; Bai, Zi Long; Chen, Zhi Hui; He, Long; Zhang, David Wei; Zhang, Qing Hua; Shi, Jin An; Park, Min Hyuk; Scott, James F.; Hwang, Cheol Seong; Jiang, An Quan

    2018-01-01

    Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.

  5. Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

    International Nuclear Information System (INIS)

    Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

    2014-01-01

    Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

  6. Magnetoelectric effect in antiferromagnetic multiferroic Pb(Fe.sub.1/2./sub. N b.sub.1/2./sub.)O.sub.3./sub. and its solid solutions with PbTi O.sub.3./sub.

    Czech Academy of Sciences Publication Activity Database

    Laguta, Valentyn; Stephanovich, V. A.; Raevski, I. P.; Raevskaya, S. I.; Titov, V.V.; Smotrakov, V. G.; Eremkin, V. V.

    2017-01-01

    Roč. 95, č. 1 (2017), 1-13, č. článku 014207. ISSN 1098-0121 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088; GA ČR GA13-11473S Institutional support: RVO:68378271 Keywords : multiferroic * antiferromagnetic * ferroelectrics * magnetoelectric effect * Landau theory Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)

  7. Theoretical modeling of diluted antiferromagnetic systems

    International Nuclear Information System (INIS)

    Pozo, J; Elgueta, R; Acevedo, R

    2000-01-01

    Some magnetic properties of a Diluted Antiferromagnetic System (DAFS) are studied. The model of the two sub-networks for antiferromagnetism is used and a Heisenberg Hamiltonian type is proposed, where the square operators are expressed in terms of boson operators with the approach of spin waves. The behavior of the diluted system's fundamental state depends basically on the competition effect between the anisotropy field and the Weiss molecular field. The approach used allows the diluted system to be worked for strong anisotropies as well as when these are very weak

  8. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien

    2017-01-01

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque

  9. Photocatalytic performances of BiFeO3 particles with the average size in nanometer, submicrometer, and micrometer

    International Nuclear Information System (INIS)

    Hao, Chunxue; FushengWen,; Xiang, Jianyong; Hou, Hang; Lv, Weiming; Lv, Yifei; Hu, Wentao; Liu, Zhongyuan

    2014-01-01

    Highlights: • Three different synthesis routes have been taken to successfully prepare the BiFeO 3 particles with the different morphologies and average size in 50, 500 nm, and 15 μm. • For photodegradation of dyes under visible irradiation in the presence of BiFeO 3 , the photocatalytic efficiency increases quickly with the decrease in size. • The enhanced photocatalytic efficiency of BiFeO 3 nanoparticles may attribute to more surface active catalytic-sites and shorter distances carriers have to migrate to the surface reaction sites. - Abstract: Three different synthesis routes were taken to successfully prepare the BiFeO 3 particles with the different morphologies and average size in 50, 500 nm, and 15 μm, respectively. The crystal structure was recognized to be a distorted rhombohedral one with the space group R3c. With the decrease in particle size, obvious decrease in peak intensity and redshift in peak position were observed for the Raman active bands. The narrow band gap was determined from the UV–vis absorption spectra, indicating the semiconducting nature of the BiFeO 3 . For photodegradation of dyes under visible irradiation in the presence of BiFeO 3 , the photocatalytic efficiency increased quickly with the decrease in size which may attribute to more surface active catalytic-sites and shorter distances carriers had to migrate to the surface reaction sites

  10. Structural, magnetic, and electrical properties of Gd-doped BiFeO3 nanoparticles with reduced particle size

    International Nuclear Information System (INIS)

    Lotey, Gurmeet Singh; Verma, N. K.

    2012-01-01

    Pure and Gd-doped BiFeO 3 nanoparticles have been synthesized by sol–gel method. The significant effects of size and Gd-doping on structural, electrical, and magnetic properties have been investigated. X-ray diffraction study reveals that the pure BiFeO 3 nanoparticles possess rhombohedral structure, but with 10% Gd-doping complete structural transformation from rhombohedral to orthorhombic has been observed. The particle size of pure and Gd-doped BiFeO 3 nanoparticles, calculated using Transmission electron microscopy, has been found to be in the range 25–15 nm. Pure and Gd-doped BiFeO 3 nanoparticles show ferromagnetic character, and the magnetization increases with decrease in particle size and increase in doping concentration. Scanning electron microscopy study reveals that grain size decreases with increase in Gd concentration. Well-saturated polarization versus electric field loop is observed for the doped samples. Leakage current density decreases by four orders by doping Gd in BiFeO 3 . The incorporation of Gd in BiFeO 3 enhances spin as well as electric polarization at room temperature. The possible origin of enhancement in these properties has been explained on the basis of dopant and its concentration, phase purity, small particle, and grain size.

  11. Magneto-optical properties of BiFeO3 thin films using surface plasmon resonance technique

    International Nuclear Information System (INIS)

    Paliwal, Ayushi; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

    2014-01-01

    Indigeneously assembled surface plasmon resonance (SPR) set up has been exploited to study the magnetic field dependent optical properties of BiFeO 3 thin films. BiFeO 3 thin films have been deposited onto gold (Au) coated glass prism by using pulsed laser deposition technique. The surface plasmon modes in prism/Au/BiFeO 3 /air structure have been excited in Kretschmann configuration at the interface of Au/BiFeO 3 thin films. The SPR reflectance curves obtained for prism/Au/BiFeO 3 /air structure were utilized to investigate the optical properties of BiFeO 3 thin films at optical frequency (λ=633 nm) as a function of applied magnetic field. SPR curves shows a continuous shift towards lower angles with increasing applied magnetic field, which indicate the promising application of ferromagnetic BiFeO 3 film as a magnetic field sensor. Complex dielectric constant of deposited BiFeO 3 film was determined by fitting the experimental SPR data with Fresnel's equations. The variation of complex dielectric constant and refractive index of BiFeO 3 film was studied with increase in magnetic field, and the sensitivity of magnetic field sensor was found to be about 0.52 RIU/T

  12. Percolation Magnetism in Ferroelectric Nanoparticles

    Science.gov (United States)

    Golovina, Iryna S.; Lemishko, Serhii V.; Morozovska, Anna N.

    2017-06-01

    Nanoparticles of potassium tantalate (KTaO3) and potassium niobate (KNbO3) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  13. Quantum fluctuations in insulating ferroelectrics

    International Nuclear Information System (INIS)

    Riseborough, Peter S.

    2010-01-01

    Graphical abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility. - Abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero-point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility.

  14. Percolation Magnetism in Ferroelectric Nanoparticles.

    Science.gov (United States)

    Golovina, Iryna S; Lemishko, Serhii V; Morozovska, Anna N

    2017-12-01

    Nanoparticles of potassium tantalate (KTaO 3 ) and potassium niobate (KNbO 3 ) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe 3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

  15. Transparent Ferroelectric Capacitors on Glass

    Directory of Open Access Journals (Sweden)

    Daniele Sette

    2017-10-01

    Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

  16. Guest Editoria, Ferroelectrics, 323, 1

    OpenAIRE

    Krupanidhi, SB

    2005-01-01

    The Fourth Asian Meeting on Ferroelectricity (AMF-4)was organized at the Indian Institute of Science, Bangalore, INDIA during December 12–15, 2003. The organization of the conferencewas cosponsored by various agencies which included the Department of Science & Technology (DST), Defense R&D Organization (DRDO), Council of Scientific and Industrial Research (CSIR), Materials Research Society of India (MRSI), Indian Institute of Science (IISC), IEEE UFFC (USA), Taylor and Francis Scientific P...

  17. Displacement-type ferroelectric transition with magnetic Mn ions in perovskite Sr1-xBaxMnO3

    Science.gov (United States)

    Sakai, Hideaki; Fujioka, Jun; Fukuda, Tatsuo; Okuyama, Daisuke; Hashizume, Daisuke; Kagawa, Fumitaka; Nakao, Hironori; Murakami, Youich; Arima, Takahisa; Baron, Alfred Q. R.; Taguchi, Yasujiro; Tokura, Yoshinori

    2012-02-01

    Almost all the proper ferroelectrics with a perovskite structure discovered so far have no d-electrons in the off-center transition metal site, as exemplified by BaTiO3 and Pb(Zr,Ti)O3. This empirical d^0 rule is incompatible with the emergence of magnetism and has significantly restricted the variety of multiferroic materials. In this work, we have discovered a displacement-type ferroelectric transition originating from off-center Mn^4+ ions in antiferromagnetic Mott insulators Sr1-xBaxMnO3. As Ba concentration increases, the perovskite lattice shows the typical soft mode dynamics, and the ferroelectricity shows up for x .45. In addition to the large polarization and high transition temperature comparable to BaTiO3, we demonstrate that the magnetic order suppresses the ferroelectric lattice dilation by ˜70% and increases the soft-phonon energy by ˜50%, indicating gigantic magnetoelectric effects [1]. This work was supported by the FIRST program on ``Quantum Science on Strong Correlation''. [4pt] [1] H. Sakai et al., Phys. Rev. Lett. 107, 137601 (2011).

  18. Hole pairing induced by antiferromagnetic spin fluctuations

    International Nuclear Information System (INIS)

    Su, Z.B.; Yu Lu; Dong, J.M.; Tosatti, E.

    1987-08-01

    The effective interaction induced by antiferromagnetic spin fluctuations is considered in the random phase approximation in the context of the recently discovered high T c oxide superconductors. This effective attraction favours a triplet pairing of holes. The implications of such pairing mechanism are discussed in connection with the current experimental observations. (author). 30 refs, 2 figs

  19. Antiferromagnetism in chromium alloy single crystals

    DEFF Research Database (Denmark)

    Bjerrum Møller, Hans; Trego, A.L.; Mackintosh, A.R.

    1965-01-01

    The antiferromagnetism of single crystals of dilute alloys of V, Mn and Re in Cr has been studied at 95°K and 300°K by neutron diffraction. The addition of V causes the diffraction peaks to decrease in intensity and move away from (100), while Mn and Re cause them to increase and approach (100) s...

  20. The electronic structure of antiferromagnetic chromium

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt

    1981-01-01

    The author has used the local spin density formalism to perform self-consistent calculations of the electronic structure of chromium in the non-magnetic and commensurate antiferromagnetic phases, as a function of the lattice parameter. A change of a few per cent in the atomic radius brings...

  1. Metallic and antiferromagnetic fixed points from gravity

    Science.gov (United States)

    Paul, Chandrima

    2018-06-01

    We consider SU(2) × U(1) gauge theory coupled to matter field in adjoints and study RG group flow. We constructed Callan-Symanzik equation and subsequent β functions and study the fixed points. We find there are two fixed points, showing metallic and antiferromagnetic behavior. We have shown that metallic phase develops an instability if certain parametric conditions are satisfied.

  2. Shape-induced anisotropy in antiferromagnetic nanoparticles

    International Nuclear Information System (INIS)

    Gomonay, O.; Kondovych, S.; Loktev, V.

    2014-01-01

    High fraction of the surface atoms considerably enhances the influence of size and shape on the magnetic and electronic properties of nanoparticles. Shape effects in ferromagnetic nanoparticles are well understood and allow us to set and control the parameters of a sample that affect its magnetic anisotropy during production. In the present paper we study the shape effects in the other widely used magnetic materials – antiferromagnets, – which possess vanishingly small or zero macroscopic magnetization. We take into account the difference between the surface and bulk magnetic anisotropy of a nanoparticle and show that the effective magnetic anisotropy depends on the particle shape and crystallographic orientation of its faces. The corresponding shape-induced contribution to the magnetic anisotropy energy is proportional to the particle volume, depends on magnetostriction, and can cause formation of equilibrium domain structure. Crystallographic orientation of the nanoparticle surface determines the type of domain structure. The proposed model allows us to predict the magnetic properties of antiferromagnetic nanoparticles depending on their shape and treatment. - Highlights: • We demonstrate that the shape effects in antiferromagnetic nanoparticles stem from the difference of surface and bulk magnetic properties combined with strong magnetoelastic coupling. • We predict shape-induced anisotropy in antiferromagnetic particles with large aspect ratio. • We predict different types of domain structures depending on the orientation of the particle faces

  3. Thermoinduced magnetization in nanoparticles of antiferromagnetic materials

    DEFF Research Database (Denmark)

    Mørup, Steen; Frandsen, Cathrine

    2004-01-01

    We show that there is a thermoinduced contribution to the magnetic moment of nanoparticles of antiferromagnetic materials. It arises from thermal excitations of the uniform spin-precession mode, and it has the unusual property that its magnitude increases with increasing temperature. This has...

  4. Polymer Ferroelectric Memory for Flexible Electronics

    KAUST Repository

    Khan, Mohd Adnan

    2013-11-01

    With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

  5. Polymer Ferroelectric Memory for Flexible Electronics

    KAUST Repository

    Khan, Mohd Adnan

    2013-01-01

    With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

  6. Structure and phase transition of BiFeO3 cubic micro-particles prepared by hydrothermal method

    International Nuclear Information System (INIS)

    Zhou, Jian-Ping; Yang, Ruo-Lin; Xiao, Rui-Juan; Chen, Xiao-Ming; Deng, Chao-Yong

    2012-01-01

    Graphical abstract: Bismuth ferrite (BiFeO 3 ) cubic micro-particles with smooth surfaces were synthesized. BiFeO 3 has a hexagonal perovskite structure with a space group R3c below 370 °C and rhombohedral perovskite structure with a space group R3m below 755 °C, undergoes a phase transition in the temperature range of 755–817 °C to a cubic structure, then decompose to liquid and Fe 2 O 3 above 939 °C. Highlights: ► BiFeO 3 micro-particles with smooth surface were synthesized by hydrothermal method. ► BiFeO 3 enjoys hexagonal structure with well element ratio and chemical valence. ► BiFeO 3 transition from rhombohedral phase to cubic phase lasts 60 °C. -- Abstract: Single-phase bismuth ferrite (BiFeO 3 ) powders were synthesized with a hydrothermal method by controlling the experimental conditions carefully. The powder structure, morphology and composition were characterized by using X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscope, Raman measurement and X-ray photoelectron spectroscopy. The particles change from irregular agglomerations to regular cubes with increasing KOH concentration. The large BiFeO 3 cubic particles enjoy much smooth surfaces with well-matched element ratio (Bi:Fe:O = 1:1:3) and chemical valence (Bi 3+ , Fe 3+ and O 2− ). The high temperature XRD and differential scanning calorimetry show that BiFeO 3 powders have a hexagonal perovskite structure with a space group R3c below 370 °C and a rhombohedral structure with a space group R3m below 755 °C. BiFeO 3 undergoes a phase transition in the temperature range of 755–817 °C from rhombohedral structure to a cubic phase, then decomposes to liquid and Fe 2 O 3 above 939 °C.

  7. A concept of ferroelectric microparticle propulsion thruster

    International Nuclear Information System (INIS)

    Yarmolich, D.; Vekselman, V.; Krasik, Ya. E.

    2008-01-01

    A space propulsion concept using charged ferroelectric microparticles as a propellant is suggested. The measured ferroelectric plasma source thrust, produced mainly by microparticles emission, reaches ∼9x10 -4 N. The obtained trajectories of microparticles demonstrate that the majority of the microparticles are positively charged, which permits further improvement of the thruster

  8. Structure-Function Relationships of Ferroelectric Polymers.

    Science.gov (United States)

    Pavlopoulou, Eleni; Maiz, Jon; Spampinato, Nicoletta; Maglione, Mario; Hadziioannou, Georges

    Poly(vinylidene fluoride), PVDF, and its copolymers with trifluoroethylene, P(VDF-co-TrFE) have been long appreciated for their excellent ferroelectric properties. Although they have been mainly studied in the 80s and 90s, understanding their performance is still lacking. Yet the increasing use of P(VDF-co-TrFE) thin films in organic electronic devices during the last ten years revives the need for apprehending the function of these materials. In this work we investigate the structure of P(VDF-co-TrFE) films and correlate it to their ferroelectric properties. Our results show that ferroelectric performance is solely driven by the fraction of polymer that has been crystallized in the ferroelectric phases of PVDF. The relations between remnant polarization, coercive field and dipole switching rate of P(VDF-co-TrFE) with the ferroelectric crystallinity are demonstrated. The French Research Agency (ANR), the Aquitaine Region, Arkema and STMicroelectronics are kindly acknowledged for financial support.

  9. Photoelectron spectroscopic and microspectroscopic probes of ferroelectrics

    Science.gov (United States)

    Tǎnase, Liviu C.; Abramiuc, Laura E.; Teodorescu, Cristian M.

    2017-12-01

    This contribution is a review of recent aspects connected with photoelectron spectroscopy of free ferroelectric surfaces, metals interfaced with these surfaces, graphene-like layers together with some exemplifications concerning molecular adsorption, dissociations and desorptions occurring from ferroelectrics. Standard photoelectron spectroscopy is used nowadays in correlation with other characterization techniques, such as piezoresponse force microscopy, high resolution transmission electron spectroscopy, and ferroelectric hysteresis cycles. In this work we will concentrate mainly on photoelectron spectroscopy and spectro-microscopy characterization of ferroelectric thin films, starting from atomically clean ferroelectric surfaces of lead zirco-titanate, then going towards heterostructures using this material in combination with graphene-like carbon layers or with metals. Concepts involving charge accumulation and depolarization near surface will be revisited by taking into account the newest findings in this area.

  10. Ferroelectric Electron Emission Principles and Technology

    CERN Document Server

    Riege, H

    1997-01-01

    The spontaneous electrical polarization of ferroelectric materials can be changed either by reversal or by phase transition from a ferroelectric into a non-ferroelectric state or vice versa. If spontaneous polarization changes are induced with fast heat, mechanical pressure, laser or electric field pulses on a submicrosecond time scale, strong uncompensated surface charge densities and related polarization fields are generated, which may lead to the intense self-emission of electrons from the negatively charged free surface areas of the ferroelectric sample. Hence, electron guns can be built with extraction-field-free ferroelectric cathodes, which may be easily separated from the high-field regions of post-accelerating gap structures. The intensity, the energy, the temporal and spatial distribution, and the repetitition rate of the emitted electron beams can be controlled within wide limits via the excitation pulses and external focusing and accelerating electromagnetic fields. The technological advantages an...

  11. Pressure-induced phase transitions of multiferroic BiFeO3

    International Nuclear Information System (INIS)

    Zhang Xiaoli; Dong Juncai; Liu Jing; Chen Dongliang; Wu Ye; Zhang Qian; Wu Xiang; Wu Ziyu

    2013-01-01

    Pressure-induced phase transitions of multiferroic BiFeO 3 have been investigated using synchrotron radiation X-ray diffraction with diamond anvil cell technique at room temperature. Present experimental data clearly show that rhombohedral (R3c) phase of BiFeO 3 first transforms to monoclinic (C2/m) phase at 7 GPa, then to orthorhombic (Pnma) phase at 11 GPa, which is consistent with recent theoretical ab initio calculation. However, we observe another peak at 2θ=7° in the pressure range of 5-7 GPa that has not been reported previously. Further analysis reveals that this reflection peak is attributed to the orthorhombic (Pbam) phase, indicating the coexistence of monoclinic phase with orthorhombic phase in low pressure range. (authors)

  12. Exchange coupling in permalloy/BiFeO3 heterostructures

    Science.gov (United States)

    Heron, John; Wang, Chen; Carlton, David; Nowakowski, Mark; Gajek, Martin; Awschalom, David; Bokor, Jeff; Ralph, Dan; Ramesh, R.

    2010-03-01

    BiFeO3 is a ferroelectric and antiferromagnetic multiferroic with the ferroelectric and antiferromagnetic order parameters coupled at room temperature. This coupling results in the reorientation of the ferroelectric and magnetic domains as applied voltages switch the electric polarization. Previous studies using ferromagnet/BiFeO3 heterostructures have shown that the anisotropy of the ferromagnetic layer can be tuned by the ferroelectric domain structure of the BiFeO3 film [1, 2]. The physical mechanism driving this exchange bias with BiFeO3 is still under investigation. We use patterned permalloy structures, with varying aspect ratios, on BiFeO3 thin films to investigate the physics of this interaction. The results of our studies using MFM, PEEM, and MOKE to understand this mechanism as a means to electric field control of magnetic structures will be presented. [4pt] [1] H. Bea et al., Physical Review Letters 100, 017204 (2008).[0pt] [2] L.W. Martin et al., Nanoletters 8, 2050 (2008).

  13. Theory of antiferromagnetic pairing in cuprate superconductors

    International Nuclear Information System (INIS)

    Plakida, N.M.

    2006-01-01

    A review of the antiferromagnetic exchange and spin-fluctuation pairing theory in the cuprate superconductors is given. We briefly discuss a phenomenological approach and a theory in the limit of weak Coulomb correlations. A microscopic theory in the strong correlation limit is presented in more detail. In particular, results of our recently developed theory for the effective p-d Hubbard model and the reduced t-J model are given. We have proved that retardation effects for the antiferromagnetic exchange interaction are unimportant that results in pairing of all charge carriers in the conduction band and high Tc proportional to the Fermi energy. The spin-fluctuation interaction caused by kinematic interaction gives an additional contribution to the d-wave pairing. Dependence of Tc on the hole concentration and the lattice constant (or pressure) and an oxygen isotope shift are discussed

  14. Magnetic behaviour of interacting antiferromagnetic nanoparticles

    International Nuclear Information System (INIS)

    Markovich, V; Jung, G; Gorodetsky, G; Puzniak, R; Wisniewski, A; Skourski, Y; Mogilyanski, D

    2012-01-01

    Magnetic properties of interacting La 0.2 Ca 0.8 MnO 3 nanoparticles have been investigated. The field-induced transition from antiferromagnetic (AFM) to ferromagnetic (FM) state in the La 0.2 Ca 0.8 MnO 3 bulk has been observed at exceptionally high magnetic fields. For large particles, the field-induced transition widens while magnetization progressively decreases. In small particles the transition is almost fully suppressed. The thermoremanence and isothermoremanence curves constitute fingerprints of irreversible magnetization originating from nanoparticle shells. We have ascribed the magnetic behaviour of nanoparticles to a core-shell scenario with two main magnetic contributions; one attributed to the formation of a collective state formed by FM clusters in frustrated coordination at the surfaces of interacting AFM nanoparticles and the other associated with inner core behaviour as a two-dimensional diluted antiferromagnet. (paper)

  15. Weyl magnons in breathing pyrochlore antiferromagnets

    Science.gov (United States)

    Li, Fei-Ye; Li, Yao-Dong; Kim, Yong Baek; Balents, Leon; Yu, Yue; Chen, Gang

    2016-01-01

    Frustrated quantum magnets not only provide exotic ground states and unusual magnetic structures, but also support unconventional excitations in many cases. Using a physically relevant spin model for a breathing pyrochlore lattice, we discuss the presence of topological linear band crossings of magnons in antiferromagnets. These are the analogues of Weyl fermions in electronic systems, which we dub Weyl magnons. The bulk Weyl magnon implies the presence of chiral magnon surface states forming arcs at finite energy. We argue that such antiferromagnets present a unique example, in which Weyl points can be manipulated in situ in the laboratory by applied fields. We discuss their appearance specifically in the breathing pyrochlore lattice, and give some general discussion of conditions to find Weyl magnons, and how they may be probed experimentally. Our work may inspire a re-examination of the magnetic excitations in many magnetically ordered systems. PMID:27650053

  16. Antiferromagnetic transition in graphene functionalized with nitroaniline

    Science.gov (United States)

    Komlev, Anton A.; Makarova, Tatiana L.; Lahderanta, Erkki; Semenikhin, Petr Valeryevich; Veinger, Anatoly I.; Kochman, Igor V.; Magnani, Giacomo; Bertoni, Giovanni; Pontiroli, Daniele; Ricco, Mauro

    2017-07-01

    Magnetic properties of graphene nanostructures functionalized with aromatic radicals were investigated by electron spin resonance (ESR) and superconducting quantum interference device (SQUID) techniques. Three types of functionalized graphene samples were investigated (functionalization was performed by 4-bromoaniline, 4-nitroaniline, or 4-chloroaniline). According to SQUID measurements, in case of functionalization by nitroaniline, sharp change in temperature dependence of magnetic susceptibility was observed near 120 K. Such behavior was explained as antiferromagnetic ordering. The same but more extended effect was observed in ESR measurements below 160 K. In the ESR measurements, only one resonance line with g-factor equal to 2.003 was observed. Based on the temperature dependencies of spin concentration and resonance position and intensity, the effect was explained as antiferromagnetic ordering along the extended defects on the basal planes of the graphene.

  17. Heat-driven spin torques in antiferromagnets

    Science.gov (United States)

    Białek, Marcin; Bréchet, Sylvain; Ansermet, Jean-Philippe

    2018-04-01

    Heat-driven magnetization damping, which is a linear function of a temperature gradient, is predicted in antiferromagnets by considering the sublattice dynamics subjected to a heat-driven spin torque. This points to the possibility of achieving spin torque oscillator behavior. The model is based on the magnetic Seebeck effect acting on sublattices which are exchange coupled. The heat-driven spin torque is estimated and the feasibility of detecting this effect is discussed.

  18. Spin Transport in Ferromagnetic and Antiferromagnetic Textures

    KAUST Repository

    Akosa, Collins A.

    2016-12-07

    In this dissertation, we provide an accurate description of spin transport in magnetic textures and in particular, we investigate in detail, the nature of spin torque and magnetic damping in such systems. Indeed, as will be further discussed in this thesis, the current-driven velocity of magnetic textures is related to the ratio between the so-called non-adiabatic torque and magnetic damping. Uncovering the physics underlying these phenomena can lead to the optimal design of magnetic systems with improved efficiency. We identified three interesting classes of systems which have attracted enormous research interest (i) Magnetic textures in systems with broken inversion symmetry: We investigate the nature of magnetic damping in non-centrosymmetric ferromagnets. Based on phenomenological and microscopic derivations, we show that the magnetic damping becomes chiral, i.e. depends on the chirality of the magnetic texture. (ii) Ferromagnetic domain walls, skyrmions and vortices: We address the physics of spin transport in sharp disordered magnetic domain walls and vortex cores. We demonstrate that upon spin-independent scattering, the non-adiabatic torque can be significantly enhanced. Such an enhancement is large for vortex cores compared to transverse domain walls. We also show that the topological spin currents owing in these structures dramatically enhances the non-adiabaticity, an effect unique to non-trivial topological textures (iii) Antiferromagnetic skyrmions: We extend this study to antiferromagnetic skyrmions and show that such an enhanced topological torque also exist in these systems. Even more interestingly, while such a non-adiabatic torque inuences the undesirable transverse velocity of ferromagnetic skyrmions, in antiferromagnetic skyrmions, the topological non-adiabatic torque directly determines the longitudinal velocity. As a consequence, scaling down the antiferromagnetic skyrmion results in a much more efficient spin torque.

  19. Entanglement in a Dimerized Antiferromagnetic Heisenberg Chain

    OpenAIRE

    Hao, Xiang; Zhu, Shiqun

    2008-01-01

    The entanglement properties in an antiferromagnetic dimerized Heisenberg spin-1/2 chain are investigated. The entanglement gap, which is the difference between the ground-state energy and the minimal energy that any separable state can attain, is calculated to detect the entanglement. It is found that the entanglement gap can be increased by varying the alternation parameter. Through thermal energy, the witness of the entanglement can determine a characteristic temperature below that an entan...

  20. Enhanced antiferromagnetic coupling in dual-synthetic antiferromagnet with Co2FeAl electrodes

    International Nuclear Information System (INIS)

    Zhang, D.L.; Xu, X.G.; Wu, Y.; Li, X.Q.; Miao, J.; Jiang, Y.

    2012-01-01

    We study dual-synthetic antiferromagnets (DSyAFs) using Co 2 FeAl (CFA) Heusler electrodes with a stack structure of Ta/CFA/Ru/CFA/Ru/CFA/Ta. When the thicknesses of the two Ru layers are 0.45 nm, 0.65 nm or 0.45 nm, 1.00 nm, the CFA-based DSyAF has a strong antiferromagnetic coupling between adjacent CFA layers at room temperature with a saturation magnetic field of ∼11,000 Oe, a saturation magnetization of ∼710 emu/cm 3 and a coercivity of ∼2.0 Oe. Moreover, the DSyAF has a good thermal stability up to 400 °C, at which CFA films show B2-ordered structure. Therefore, the CFA-based DSyAFs are favorable for applications in future spintronic devices. - Graphical abstract: Display Omitted Highlights: ► Co 2 FeAl can be applied in room temperature dual-synthetic antiferromagnets. ► Co 2 FeAl dual-synthetic antiferromagnets have a good thermal stability up to 400 °C. ► The Co 2 FeAl has B2-ordered structure in annealed dual-synthetic antiferromagnets.

  1. Noncollinear antiferromagnetic Mn3Sn films

    Science.gov (United States)

    Markou, A.; Taylor, J. M.; Kalache, A.; Werner, P.; Parkin, S. S. P.; Felser, C.

    2018-05-01

    Noncollinear hexagonal antiferromagnets with almost zero net magnetization were recently shown to demonstrate giant anomalous Hall effect. Here, we present the structural and magnetic properties of noncollinear antiferromagnetic Mn3Sn thin films heteroepitaxially grown on Y:ZrO2 (111) substrates with a Ru underlayer. The Mn3Sn films were crystallized in the hexagonal D 019 structure with c -axis preferred (0001) crystal orientation. The Mn3Sn films are discontinuous, forming large islands of approximately 400 nm in width, but are chemical homogeneous and characterized by near perfect heteroepitaxy. Furthermore, the thin films show weak ferromagnetism with an in-plane uncompensated magnetization of M =34 kA/m and coercivity of μ0Hc=4.0 mT at room temperature. Additionally, the exchange bias effect was studied in Mn3Sn /Py bilayers. Exchange bias fields up to μ0HEB=12.6 mT can be achieved at 5 K. These results show Mn3Sn films to be an attractive material for applications in antiferromagnetic spintronics.

  2. Model calculation of thermal conductivity in antiferromagnets

    Energy Technology Data Exchange (ETDEWEB)

    Mikhail, I.F.I., E-mail: ifi_mikhail@hotmail.com; Ismail, I.M.M.; Ameen, M.

    2015-11-01

    A theoretical study is given of thermal conductivity in antiferromagnetic materials. The study has the advantage that the three-phonon interactions as well as the magnon phonon interactions have been represented by model operators that preserve the important properties of the exact collision operators. A new expression for thermal conductivity has been derived that involves the same terms obtained in our previous work in addition to two new terms. These two terms represent the conservation and quasi-conservation of wavevector that occur in the three-phonon Normal and Umklapp processes respectively. They gave appreciable contributions to the thermal conductivity and have led to an excellent quantitative agreement with the experimental measurements of the antiferromagnet FeCl{sub 2}. - Highlights: • The Boltzmann equations of phonons and magnons in antiferromagnets have been studied. • Model operators have been used to represent the magnon–phonon and three-phonon interactions. • The models possess the same important properties as the exact operators. • A new expression for the thermal conductivity has been derived. • The results showed a good quantitative agreement with the experimental data of FeCl{sub 2}.

  3. Structural Consequences of Ferroelectric Nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    J Young Jo; P Chen; R Sichel; S Bake; R Smith; N Balke; S Kalinin; M Holt; J Maser; et al.

    2011-12-31

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O{sub 3} thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  4. Chemical segregation and self polarisation in ferroelectrics

    Directory of Open Access Journals (Sweden)

    Bernard E. Watts

    2009-06-01

    Full Text Available Chemical partitioning or segregation is commonly encountered in solid-state syntheses. It is driven by compositional, thermal and electric field gradients. These phenomena can be quite extreme in thin films and lead to notable effects on the electrical properties of ferroelectrics. The segregation in ferroelectric thin films will be illustrated and the mechanisms explained in terms of diffusion processes driven by a potential gradient of the oxygen. The hypothesis can also explain self polarisation and imprint in ferroelectric hysteresis.

  5. Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

    Science.gov (United States)

    Tenne, D A; Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Katiyar, R S; Cantarero, A; Soukiassian, A; Vaithyanathan, V; Haeni, J H; Tian, W; Schlom, D G; Choi, K J; Kim, D M; Eom, C B; Sun, H P; Pan, X Q; Li, Y L; Chen, L Q; Jia, Q X; Nakhmanson, S M; Rabe, K M; Xi, X X

    2006-09-15

    We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

  6. Static Characteristics of the Ferroelectric Transistor Inverter

    Science.gov (United States)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  7. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    Energy Technology Data Exchange (ETDEWEB)

    Daranciang, Dan

    2012-02-15

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  8. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    International Nuclear Information System (INIS)

    Daranciang, Dan

    2012-01-01

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  9. Robust spin transfer torque in antiferromagnetic tunnel junctions

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2017-04-18

    We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

  10. Voltage Control of Antiferromagnetic Phases at Near-Terahertz Frequencies

    Science.gov (United States)

    Barra, Anthony; Domann, John; Kim, Ki Wook; Carman, Greg

    2018-03-01

    A method to control antiferromagnetism using voltage-induced strain is proposed and theoretically examined. Voltage-induced magnetoelastic anisotropy is shown to provide sufficient torque to switch an antiferromagnetic domain 90° either from out of plane to in plane or between in-plane axes. Numerical results indicate that strain-mediated antiferromagnetic switching can occur in an 80-nm nanopatterned disk at frequencies approaching 1 THz but that the switching speed heavily depends on the system's mechanical design. Furthermore, the energy cost to induce magnetic switching is only 450 aJ, indicating that magnetoelastic control of antiferromagnetism is substantially more energy efficient than other approaches.

  11. Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO3 Ultrathin Films

    Directory of Open Access Journals (Sweden)

    Chuanwei Huang

    2014-07-01

    Full Text Available In functional oxide films, different electrical/mechanical boundaries near film surfaces induce rich phase diagrams and exotic phenomena. In this paper, we review some key points which underpin structure, phase transition and related properties in BiFeO3 ultrathin films. Compared with the bulk counterparts, we survey the recent results of epitaxial BiFeO3 ultrathin films to illustrate how the atomic structure and phase are markedly influenced by the interface between the film and the substrate, and to emphasize the roles of misfit strain and depolarization field on determining the domain patterns, phase transformation and associated physical properties of BiFeO3 ultrathin films, such as polarization, piezoelectricity, and magnetism. One of the obvious consequences of the misfit strain on BiFeO3 ultrathin films is the emergence of a sequence of phase transition from tetragonal to mixed tetragonal & rhombohedral, the rhombohedral, mixed rhombohedral & orthorhombic, and finally orthorhombic phases. Other striking features of this system are the stable domain patterns and the crossover of 71° and 109° domains with different electrical boundary conditions on the film surface, which can be controlled and manipulated through the depolarization field. The external field-sensitive enhancements of properties for BiFeO3 ultrathin films, including the polarization, magnetism and morphotropic phase boundary-relevant piezoelectric response, offer us deeper insights into the investigations of the emergent properties and phenomena of epitaxial ultrathin films under various mechanical/electrical constraints. Finally, we briefly summarize the recent progress and list open questions for future study on BiFeO3 ultrathin films.

  12. Modeling of Toroidal Ordering in Ferroelectric Nanodots

    National Research Council Canada - National Science Library

    Crone, Joshua C; Chung, Peter W

    2007-01-01

    .... Beginning with an introduction of basic concepts, the report reviews the current state-of-the-art of ferroelectric nanodot technology through a literature review and identifies areas of need for continued study...

  13. Negative capacitance in a ferroelectric capacitor.

    Science.gov (United States)

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  14. Four-state ferroelectric spin-valve

    Czech Academy of Sciences Publication Activity Database

    Quindeau, A.; Fina, I.; Martí, Xavier; Apachitei, G.; Ferrer, P.; Nicklin, C.; Pippel, E.; Hesse, D.; Alexe, M.

    2015-01-01

    Roč. 5, May (2015), 09749 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic and spintronic devices * ferroelectrics and multiferroics Subject RIV: BE - Theoretical Physics Impact factor: 5.228, year: 2015

  15. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    Science.gov (United States)

    2016-04-19

    the free energy of the system [3,4,8]. Intensive research has been aimed at bypassing the intrinsic size limits imposed by the depolarization field...Page 1 of 21   Ultrafast photovoltaic response in ferroelectric nanolayers Dan Daranciang1,2, Matthew J. Highland3, Haidan Wen4, Steve M. Young5...ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on

  16. Ferroelectric Phase Diagram of PVDF:PMMA

    OpenAIRE

    Li, Mengyuan; Stingelin, Natalie; Michels, Jasper J.; Spijkman, Mark-Jan; Asadi, Kamal; Feldman, Kirill; Blom, Paul W. M.; de Leeuw, Dago M.

    2012-01-01

    We have investigated the ferroelectric phase diagram of poly(vinylidene fluoride) (PVDF) and poly(methyl methacrylate) (PMMA). The binary nonequilibrium temperature composition diagram was determined and melting of alpha- and beta-phase PVDF was identified. Ferroelectric beta-PVDF:PMMA blend films were made by melting, ice quenching, and subsequent annealing above the glass transition temperature of PMMA, close to the melting temperature of PVDF. Addition of PMMA suppresses the crystallizatio...

  17. Anisotropic magnetoresistance in an antiferromagnetic semiconductor

    Czech Academy of Sciences Publication Activity Database

    Fina, I.; Martí, Xavier; Yi, D.; Liu, J.; Chu, J.-H.; Rayan-Serrao, C.; Suresha, S.; Shick, Alexander; Železný, Jakub; Jungwirth, Tomáš; Fontcuberta, J.; Ramesh, R.

    2014-01-01

    Roč. 5, SEP (2014), "4671-1"-"4671-7" ISSN 2041-1723 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G; GA ČR(CZ) GAP204/10/0330 EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:68378271 Keywords : antiferromagnets * semiconductors * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 11.470, year: 2014

  18. Room-temperature antiferromagnetic memory resistor

    Czech Academy of Sciences Publication Activity Database

    Martí, Xavier; Fina, I.; Frontera, C.; Liu, J.; Wadley, P.; He, P.; Paull, R.J.; Clarkson, J.D.; Kudrnovský, Josef; Turek, Ilja; Kuneš, Jan; Yi, D.; Chu, J.-H.; Nelson, C.T.; You, L.; Arenholz, E.; Salahuddin, S.; Fontcuberta, J.; Jungwirth, Tomáš; Ramesh, R.

    2014-01-01

    Roč. 13, č. 4 (2014), s. 367-374 ISSN 1476-1122 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR(CZ) GAP204/11/1228 EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:68378271 ; RVO:68081723 Keywords : spintronics * antiferromagnets * memories Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 36.503, year: 2014

  19. Solitons in one-dimensional antiferromagnetic chains

    International Nuclear Information System (INIS)

    Pires, A.S.T.; Talim, S.L.; Costa, B.V.

    1989-01-01

    We study the quantum-statistical mechanics, at low temperatures, of a one-dimensional antiferromagnetic Heisenberg model with two anisotropies. In the weak-coupling limit we determine the temperature dependences of the soliton energy and the soliton density. We have found that the leading correction to the sine-Gordon (SG) expression for the soliton density and the quantum soliton energy comes from the out-of-plane magnon mode, not present in the pure SG model. We also show that when an external magnetic field is applied, the chain supports a new type of kink, where the sublattices rotate in opposite directions

  20. Magnetic and ferroelectric properties of Fe doped SrTiO{sub 3-{delta}} films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A Sendil; Suresh, P; Srinath, S [School of Physics, University of Hyderabad, Hyderabad, 500 046 (India); Kumar, M Mahesh; Post, M L [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, ON, K1A 0R6 (Canada); Srikanth, H [Materials Physics Laboratory, Department of Physics, University of South Florida, Tampa, Florida, 33620 (United States); Sahner, Kathy; Moos, Ralf, E-mail: sssp@uohyd.ernet.i [Functional Materials, University of Bayreuth, 95447, Bayreuth (Germany)

    2010-01-01

    Recent interest in SrTiO{sub 3} stems from its wide applicability in microwave devices based on the tunable characteristics of dielectric constant in the microwave frequency range. It is obvious that for any such application, SrTiO{sub 3} should have a ferroelectric Curie temperature (T{sub C}) close to room temperature or higher. By inducing strains by chemical substitutions, it was possible to obtain T{sub C} as high as 200{sup 0}C in SrTiO{sub 3} modified with Fe{sup 4+}. Hysteresis loops obtained confirms the presence of ferroelectric domains. Two apparent transitions, one at {approx}200 {sup 0}C and another {approx}300 {sup 0}C were seen in {epsilon}', which are replicated as sharp drops in resistivity curves. These temperatures far exceed the T{sub C}s reported in the literature till now and could open new avenues for innumerable other applications for SrTiO{sub 3}. The magnetic properties of Fe doped SrTiO{sub 3} are also investigated. Low doping of Fe exhibits simple antiferromagnetic behaviour.

  1. Dirac Fermions in an Antiferromagnetic Semimetal

    Science.gov (United States)

    Tang, Peizhe; Zhou, Quan; Xu, Gang; Zhang, Shou-Cheng; Shou-Cheng Zhang's Group Team, Prof.

    Analogues of the elementary particles have been extensively searched for in condensed matter systems for both scientific interest and technological applications. Recently, massless Dirac fermions were found to emerge as low energy excitations in materials now known as Dirac semimetals. All the currently known Dirac semimetals are nonmagnetic with both time-reversal symmetry  and inversion symmetry "". Here we show that Dirac fermions can exist in one type of antiferromagnetic systems, where both  and "" are broken but their combination "" is respected. We propose orthorhombic antiferromagnet CuMnAs as a candidate, analyze the robustness of the Dirac points under symmetry protections, and demonstrate its distinctive bulk dispersions as well as the corresponding surface states by ab initio calculations. Our results provide a possible platform to study the interplay of Dirac fermion physics and magnetism. We acknowledge the DOE, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SF00515, NSF under Grant No.DMR-1305677 and FAME, one of six centers of STARnet.

  2. Antiferromagnetic domains in rare earth metals and alloys

    Energy Technology Data Exchange (ETDEWEB)

    Palmer, S B [Hull Univ. (UK). Dept. of Applied Physics

    1975-12-01

    Anomalies in the c-axis elastic properties of antiferromagnetic Dy, 50% Tb-Ho and 60% Gd-Y are reported. The anomalies are only present when the sample is cycled from the ferromagnetic to the antiferromagnetic state and are attributed to domains in the helical regime.

  3. Spin transport and spin torque in antiferromagnetic devices

    Science.gov (United States)

    Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

    2018-03-01

    Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

  4. Scattering of neutrons and critical phenomena in antiferromagnetic fermi liquid

    International Nuclear Information System (INIS)

    Akhiezer, I.A.; Barannik, E.A.

    1980-01-01

    The scattering of slow neutrons in an antiferromagnetic with collectivized magnetic electrons is considered and it is shown to significantly differ from the neutron scattering in an antiferromagnetic with localized magnetic electrons. The behaviour of scattering cross sections and fluctuation correlators near the Neel point is studied. These magnitudes are shown to increase with the critical index r=-1 [ru

  5. Possible coexistence of antiferromagnetism and superconductivity in the Hubbard model

    International Nuclear Information System (INIS)

    Su Zhaobin; Dong Jinming; Yu Lu; Shen Juelian

    1988-01-01

    The Hubbard model in the nearly half-filled case was studied in the mean field approximation using the effective Hamiltonian approach. Both antiferromagnetic order parameter and condensation of singlet pairs were considered. In certain parameter ranges the coexistence of antiferromagnetism and superconductivity is energetically favourable. Relevance to the high temperature superconductivity and other theoretical approaches is also discussed. (author). 10 refs, 3 figs

  6. Experimental and theoretical studies of nanoparticles of antiferromagnetic materials

    DEFF Research Database (Denmark)

    Mørup, Steen; Madsen, Daniel Esmarch; Frandsen, Cathrine

    2007-01-01

    The magnetic properties of nanoparticles of antiferromagnetic materials are reviewed. The magnetic structure is often similar to the bulk structure, but there are several examples of size-dependent magnetic structures. Owing to the small magnetic moments of antiferromagnetic nanoparticles, the co...

  7. Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy.

    Science.gov (United States)

    Domingo, N; Farokhipoor, S; Santiso, J; Noheda, B; Catalan, G

    2017-08-23

    We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO 3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

  8. Superconductivity, Antiferromagnetism, and Kinetic Correlation in Strongly Correlated Electron Systems

    Directory of Open Access Journals (Sweden)

    Takashi Yanagisawa

    2015-01-01

    Full Text Available We investigate the ground state of two-dimensional Hubbard model on the basis of the variational Monte Carlo method. We use wave functions that include kinetic correlation and doublon-holon correlation beyond the Gutzwiller ansatz. It is still not clear whether the Hubbard model accounts for high-temperature superconductivity. The antiferromagnetic correlation plays a key role in the study of pairing mechanism because the superconductive phase exists usually close to the antiferromagnetic phase. We investigate the stability of the antiferromagnetic state when holes are doped as a function of the Coulomb repulsion U. We show that the antiferromagnetic correlation is suppressed as U is increased exceeding the bandwidth. High-temperature superconductivity is possible in this region with enhanced antiferromagnetic spin fluctuation and pairing interaction.

  9. Enhancement in magnetic and dielectric properties of La and Pr co substituted BiFeO3

    International Nuclear Information System (INIS)

    Srivastava, Amit; Singh, H.K.; Awana, V.P.S.; Srivastava, O.N.

    2013-01-01

    Highlights: ► Significant enhancement in magnetization of BiFeO 3 is found on La and Pr co substitution. ► It is correlated with structural phase transformation and nanosized crystallites. ► Dielectric losses strongly diminish with La and Pr co substitution. -- Abstract: This report underlines the systematic studies of crystalline structure, magnetic and ferroelectric properties of polycrystalline Bi 1−x−y La x Pr y FeO 3 ceramic samples, in which x changes continuously from 0 to 0.2 for y = 0 and y from 0 to 0.2 for x = 0.2. X-ray diffraction (XRD) patterns revealed that La and Pr substitution at Bi site in the ceramic eliminates the usual impurity phases completely. Rietveld refinement of the XRD patterns shows that the crystal structure changes gradually from Rhombohedral (R3c) to Orthorhombic (pbnm) with increasing La and Pr concentration. This transition has significant effects on the multiferroic properties of Bi 1−x−y La x Pr y FeO 3 ceramics. Substantial enhancement in magnetization of Bi 1−x−y La x Pr y FeO 3 has been observed and this is found to be correlated with the evolution of structural phase change with doping of Pr in samples having lanthanum concentration of x = 0.2. This leads to the suppression of helical spin order. However, the enhancement in magnetic behavior also takes place due to nanocrystallite nature of Bi 1−x−y La x Pr y FeO 3 (x = 0.2, y = 0.05–0.2). For the nanocrystallites having sizes lower than 62 nm, which is the period of spin cycloid, this spin configuration will get destroyed resulting in the enhancement of magnetization. The studies of microstructures employing SEM and TEM revealed that Bi 1−x−y La x Pr y FeO 3 consists of nano size grained microstructures. It is also found that dielectric constant and dielectric loss get improved by La and Pr co-substitution. The dielectric constant for x = 0.0, y = 0.0 is 81 which changes to 354 for x = 0.2, y = 0.15 at 100 Hz. Dielectric losses are strongly

  10. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NARCIS (Netherlands)

    Cai, R.; Kassa, H.G.; Haouari, R.; Marrani, A.; Geerts, Y.H.; Ruzié, C.; Breemen, A.J.J.M. van; Gelinck, G.H.; Nysten, B.; Hu, Z.; Jonas, A.M.

    2016-01-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and

  11. Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

    NARCIS (Netherlands)

    Farokhipoor, S.; Noheda, Beatriz

    2012-01-01

    BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71 degrees domain walls. A smaller amount of 109 degrees domain walls are also present at the boundaries between two adjacent

  12. Flexible graphene–PZT ferroelectric nonvolatile memory

    International Nuclear Information System (INIS)

    Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

    2013-01-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

  13. Impact induced depolarization of ferroelectric materials

    Science.gov (United States)

    Agrawal, Vinamra; Bhattacharya, Kaushik

    2018-06-01

    We study the large deformation dynamic behavior and the associated nonlinear electro-thermo-mechanical coupling exhibited by ferroelectric materials in adiabatic environments. This is motivated by a ferroelectric generator which involves pulsed power generation by loading the ferroelectric material with a shock, either by impact or a blast. Upon impact, a shock wave travels through the material inducing a ferroelectric to nonpolar phase transition giving rise to a large voltage difference in an open circuit situation or a large current in a closed circuit situation. In the first part of this paper, we provide a general continuum mechanical treatment of the situation assuming a sharp phase boundary that is possibly charged. We derive the governing laws, as well as the driving force acting on the phase boundary. In the second part, we use the derived equations and a particular constitutive relation that describes the ferroelectric to nonpolar phase transition to study a uniaxial plate impact problem. We develop a numerical method where the phase boundary is tracked but other discontinuities are captured using a finite volume method. We compare our results with experimental observations to find good agreement. Specifically, our model reproduces the observed exponential rise of charge as well as the resistance dependent Hugoniot. We conclude with a parameter study that provides detailed insight into various aspects of the problem.

  14. Flexible graphene-PZT ferroelectric nonvolatile memory.

    Science.gov (United States)

    Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-29

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  15. Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

    Science.gov (United States)

    Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

    2018-02-01

    Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

  16. Understanding Strain-Induced Phase Transformations in BiFeO3 Thin Films.

    Science.gov (United States)

    Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M; Cooper, Valentino R

    2015-08-01

    Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO 3 thin films, which comprises a tetragonal-like ( T ') and an intermediate S ' polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T ' phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S ' phase is energetically very close to the T ' phase, but is structurally similar to the bulk rhombohedral ( R ) phase. By fully characterizing the intermediate S ' polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T ' and S ' phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S ' and T ' polymorphs, which have very different octahedral rotation patterns and c / a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO 3 films. Additionally, a blueshift in the band gap when moving from R to S ' to T ' is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

  17. Structural and electrical characterization of BiFeO3-NaTaO3 multiferroic

    International Nuclear Information System (INIS)

    Mohanty, Suchismita; Choudhary, R.N.P.; Parida, B.N.; Padhee, R.

    2014-01-01

    Using a standard high-temperature solid-state reaction technique, polycrystalline samples of (Bi 1-x , Na x ) (Fe 1-x , Ta x ) O 3 (x = 0.0, 0.5) were prepared. The formation of the desired materials was confirmed by X-ray diffraction. The surface texture of the prepared materials recorded by scanning electron microscope exhibits a uniform grain distribution with small voids suggesting the formation of high-density pellet samples. The impedance and dielectric properties of the materials were investigated as a function of temperature and frequency. The relative dielectric constant and loss tangent of BiFeO 3 decrease on addition of NaTaO 3 (x = 0.5). The effect of addition of NaTaO 3 on grain and grain boundary contributions in the resistive and capacitive components of BiFeO 3 was studied using complex impedance spectroscopy. The value of activation energy due to both grain and grain boundary of both the samples is nearly same. The nature of variation of dc conductivity confirms the Arrhenius behavior of the materials. Study of frequency dependence of ac conductivity suggests that the materials obey Jonscher's universal power law and the presence of ionic conductivity. (orig.)

  18. Pinning, rotation, and metastability of BiFeO3 cycloidal domains in a magnetic field

    Science.gov (United States)

    Fishman, Randy S.

    2018-01-01

    Earlier models for the room-temperature multiferroic BiFeO3 implicitly assumed that a very strong anisotropy restricts the domain wave vectors q to the threefold-symmetric axis normal to the static polarization P . However, recent measurements demonstrate that the domain wave vectors q rotate within the hexagonal plane normal to P away from the magnetic field orientation m . We show that the previously neglected threefold anisotropy K3 restricts the wave vectors to lie along the threefold axis in zero field. Taking m to lie along a threefold axis, the domain with q parallel to m remains metastable below Bc 1≈7 T. Due to the pinning of domains by nonmagnetic impurities, the wave vectors of the other two domains start to rotate away from m above 5.6 T, when the component of the torque τ =M ×B along P exceeds a threshold value τpin. Since τ =0 when m ⊥q , the wave vectors of those domains never become completely perpendicular to the magnetic field. Our results explain recent measurements of the critical field as a function of field orientation, small-angle neutron scattering measurements of the wave vectors, as well as spectroscopic measurements with m along a threefold axis. The model developed in this paper also explains how the three multiferroic domains of BiFeO3 for a fixed P can be manipulated by a magnetic field.

  19. Uncooled monolithic ferroelectric IRFPA technology

    Science.gov (United States)

    Belcher, James F.; Hanson, Charles M.; Beratan, Howard R.; Udayakumar, K. R.; Soch, Kevin L.

    1998-10-01

    Once relegated to expensive military platforms, occasionally to civilian platforms, and envisioned for individual soldiers, uncooled thermal imaging affords cost-effective solutions for police cars, commercial surveillance, driving aids, and a variety of other industrial and consumer applications. System prices are continuing to drop, and swelling production volume will soon drive prices substantially lower. The impetus for further development is to improve performance. Hybrid barium strontium titanate (BST) detectors currently in production are relatively inexpensive, but have limited potential for improved performance. The MTF at high frequencies is limited by thermal conduction through the optical coating. Microbolometer arrays in development at Raytheon have recently demonstrated performance superior to hybrid detectors. However, microbolometer technology lacks a mature, low-cost system technology and an abundance of upgradable, deployable system implementations. Thin-film ferroelectric (TFFE) detectors have all the performance potential of microbolometers. They are also compatible with numerous fielded and planned system implementations. Like the resistive microbolometer, the TFFE detector is monolithic; i.e., the detector material is deposited directly on the readout IC rather than being bump bonded to it. Imaging arrays of 240 X 320 pixels have been produced, demonstrating the feasibility of the technology.

  20. Ising antiferromagnet on the Archimedean lattices

    Science.gov (United States)

    Yu, Unjong

    2015-06-01

    Geometric frustration effects were studied systematically with the Ising antiferromagnet on the 11 Archimedean lattices using the Monte Carlo methods. The Wang-Landau algorithm for static properties (specific heat and residual entropy) and the Metropolis algorithm for a freezing order parameter were adopted. The exact residual entropy was also found. Based on the degree of frustration and dynamic properties, ground states of them were determined. The Shastry-Sutherland lattice and the trellis lattice are weakly frustrated and have two- and one-dimensional long-range-ordered ground states, respectively. The bounce, maple-leaf, and star lattices have the spin ice phase. The spin liquid phase appears in the triangular and kagome lattices.

  1. Antiferromagnetic spinor condensates in a bichromatic superlattice

    Science.gov (United States)

    Tang, Tao; Zhao, Lichao; Chen, Zihe; Liu, Yingmei

    2017-04-01

    A spinor Bose-Einstein condensate in an optical supelattice has been considered as a good quantum simulator for understanding mesoscopic magnetism. We report an experimental study on an antiferromagnetic spinor condensate in a bichromatic superlattice constructed by a cubic red-detuned optical lattice and a one-dimensional blue-detuned optical lattice. Our data demonstrate a few advantages of this bichromatic superlattice over a monochromatic lattice. One distinct advantage is that the bichromatic superlattice enables realizing the first-order superfluid to Mott-insulator phase transitions within a much wider range of magnetic fields. In addition, we discuss an apparent discrepancy between our data and the mean-field theory. We thank the National Science Foundation and the Oklahoma Center for the Advancement of Science and Technology for financial support.

  2. Magnetostriction and magnetoelastic domains in antiferromagnets

    International Nuclear Information System (INIS)

    Gomonay, Helen; Loktev, Vadim M.

    2002-01-01

    The problem of the observable equilibrium domain structure (DS) in pure antiferromagnets is investigated with the use of continuous elasticity theory. It is shown that the difference between the bulk and surface magnetoelastic strains causes imaginary 'incompatibility elastic charges' analogous to the surface 'magnetic' charges in ferromagnets. The corresponding long-range field is shown to contribute to the 'stray' energy of the sample that governs the appearance of the DS, the contribution from the 'elastic charges' being proportional to the sample volume. Competition between the elastic 'stray' field, which favours inhomogeneous strain distribution, and an external field, which tends to make the sample homogeneous, provides a reversible reconstruction of the DS under the action of the external magnetic field. (author)

  3. Quantum switching of polarization in mesoscopic ferroelectrics

    International Nuclear Information System (INIS)

    Sa de Melo, C.A.

    1996-01-01

    A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. copyright 1996 The American Physical Society

  4. Electrostatic micromotor based on ferroelectric ceramics

    Science.gov (United States)

    Baginsky, I. L.; Kostsov, E. G.

    2004-11-01

    A new electrostatic micromotor is described that utilizes the electromechanical energy conversion principle earlier described by the authors. The electromechanical energy conversion is based on reversible electrostatic rolling of thin metallic films (petals) on a ferroelectric surface. The motor's active media are layers of ferroelectric ceramics (about 100 µm in thickness). The characteristics of the electrostatic rolling of the petals on different ceramic surfaces are studied, as well as the dynamic characteristics of the micromotors. It is shown that the use of antiferroelectric material allows one to reach a specific energy capacitance comparable to that of the micromotors based on ferroelectric films and to achieve a specific power of 30-300 µW mm-2.

  5. Flexoelectricity: strain gradient effects in ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Ma Wenhui [Department of Physics, Shantou Unversity, Shantou, Guangdong 515063 (China)

    2007-12-15

    Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 {mu} C m{sup -1} for lead zirconate titanate to 100 {mu} C m{sup -1} for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems.

  6. Ferroelectric domain continuity over grain boundaries

    DEFF Research Database (Denmark)

    Mantri, Sukriti; Oddershede, Jette; Damjanovic, Dragan

    2017-01-01

    Formation and mobility of domain walls in ferroelectric materials is responsible for many of their electrical and mechanical properties. Domain wall continuity across grain boundaries has been observed since the 1950's and is speculated to affect the grain boundary-domain interactions, thereby...... impacting macroscopic ferroelectric properties in polycrystalline systems. However detailed studies of such correlated domain structures across grain boundaries are limited. In this work, we have developed the mathematical requirements for domain wall plane matching at grain boundaries of any given...... orientation. We have also incorporated the effect of grain boundary ferroelectric polarization charge created when any two domains meet at the grain boundary plane. The probability of domain wall continuity for three specific grain misorientations is studied. Use of this knowledge to optimize processing...

  7. Ferroelectric Cathodes in Transverse Magnetic Fields

    International Nuclear Information System (INIS)

    Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

    2002-01-01

    Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode

  8. Quantum mechanical studies of complex ferroelectric perovskites

    Science.gov (United States)

    Ramer, Nicholas John

    In many electronic device applications, there is a need to interconvert electrical energy and other types of energy. Ferroelectric materials, which possess a voltage-dependent polarization, can enable this energy conversion process. Because of the broad interest in ferroelectric materials for these devices, there is a critical research effort, both experimental and theoretical, to understand these materials and aid in the development of materials with improved properties. This thesis presents detailed quantum mechanical investigations of the behavior of a complex ferroelectric perovskite under applied stress. In particular, we have chosen to study the solid solution PbZr1-xTix O3 (PZT). Since the study of ferroelectricity involves understanding both its structural and electronic signatures in materials, it has necessitated the development of a novel theoretical technique which improves the accuracy of the pseudopotentials used in our density functional theory calculations as well as a new method for constructing three-dimensional atomistic responses to small amounts of external stress. To examine the material's behavior under larger amounts of stress, we have studied the behavior of a composition of PZT lying near a structural phase boundary. On either side of the phase boundary, the material is characterized by a different polarization direction and may easily be switched between phases by applying external stress. In addition to stress-induced phase transitions, most ferroelectric materials also have composition dependent phase boundaries. Since different compositions of PZT would require increased computational effort, we have formulated an improved virtual crystal approach that makes tractable the study of the entire composition range. Using this method, we have been able to show for the first time via first-principles calculations, a composition dependent phase transition in a ferroelectric material. This thesis has accomplished three important goals: new

  9. Composition driven structural instability in perovskite ferroelectrics

    Directory of Open Access Journals (Sweden)

    Chao Xu

    2017-04-01

    Full Text Available Ferroelectric solid solutions usually exhibit enhanced functional properties at the morphotropic phase boundary separating two ferroelectric phases with different orientations of polarization. The underlying mechanism is generally associated with polarization rotational instability and the flattened free energy profile. In this work we show that the polarization extensional instability can also be induced at the morphotropic phase boundary beyond the reported polar-nonpolar phase boundary. The piezoelectricity enhanced by this mechanism exhibits excellent thermal stability, which helps to develop high performance piezoelectric materials with good temperature stability.

  10. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  11. Band-gap tuning and magnetic properties of heterovalent ions (Ba, Sr and Ca) substituted BiFeO_3 nanoparticles

    International Nuclear Information System (INIS)

    Chauhan, Sunil; Kumar, Manoj; Katyal, S. C.

    2016-01-01

    A Comparative study of heterovalent Ba, Sr and Ca ions substitution on the structural, vibrational, optical and magnetic properties of BiFeO_3 nanoparticles was carried out. The distorted rhombohedral structure was confirmed from both X-ray diffraction and Raman spectroscopy techniques in pure BiFeO_3 and Bi_0_._8_5A_0_._1_5FeO_3 (A= Ba, Sr and Ca) samples. UV-Visible spectroscopy results show that the band-gap of BiFeO_3 nanoparticles can be tuned by heterovalent ions substitution from 2.12 eV for BiFeO_3 to 2.10, 2.06 and 2.03 eV for Ca, Sr and Ba substituted BiFeO_3 nanoparticles respectively. The magnetic measurements indicate enhancement in magnetization for heterovalent A"2"+ substituted BiFeO_3 samples and the magnetization increases with increase of ionic radius of the substituted ions.

  12. Reciprocal propagation of surface modes in an antiferromagnetic film

    International Nuclear Information System (INIS)

    Oliveira, F.A.; Amato, M.A.

    1987-09-01

    Linear response theory is used to evaluate the Green's functions describing the fluctuations in an antiferromagnetic film at zero applied field. It is shown the similarities between the dielectric and magnetic excitations. (Author) [pt

  13. Long-range interactions in antiferromagnetic quantum spin chains

    Science.gov (United States)

    Bravo, B.; Cabra, D. C.; Gómez Albarracín, F. A.; Rossini, G. L.

    2017-08-01

    We study the role of long-range dipolar interactions on antiferromagnetic spin chains, from the classical S →∞ limit to the deep quantum case S =1 /2 , including a transverse magnetic field. To this end, we combine different techniques such as classical energy minima, classical Monte Carlo, linear spin waves, bosonization, and density matrix renormalization group (DMRG). We find a phase transition from the already reported dipolar ferromagnetic region to an antiferromagnetic region for high enough antiferromagnetic exchange. Thermal and quantum fluctuations destabilize the classical order before reaching magnetic saturation in both phases, and also close to zero field in the antiferromagnetic phase. In the extreme quantum limit S =1 /2 , extensive DMRG computations show that the main phases remain present with transition lines to saturation significatively shifted to lower fields, in agreement with the bosonization analysis. The overall picture maintains a close analogy with the phase diagram of the anisotropic XXZ spin chain in a transverse field.

  14. Electronic energy spectra in antiferromagnetic media with broken reciprocity

    International Nuclear Information System (INIS)

    Vitebsky, I.; Edelkind, J.; Bogachek, E.N.; Scherbakov, A.G.; Landman, U.

    1997-01-01

    Electronic energy spectra var-epsilon(q) of antiferromagnetically ordered media may display nonreciprocity; that is, the energies corresponding to Bloch states with wave numbers q and -q may be different. In this paper a simple Kronig-Penney model, which includes a staggered microscopic magnetic and electric fields of the proper symmetry, is employed to estimate the magnitude of nonreciprocity effects in systems such as antiferromagnetically ordered crystals as well as periodical layered structures. copyright 1997 The American Physical Society

  15. Reversal of exchange bias in nanocrystalline antiferromagnetic-ferromagnetic bilayers

    International Nuclear Information System (INIS)

    Prados, C; Pina, E; Hernando, A; Montone, A

    2002-01-01

    The sign of the exchange bias in field cooled nanocrystalline antiferromagnetic-ferromagnetic bilayers (Co-O and Ni-O/permalloy) is reversed at temperatures approaching the antiferromagnetic (AFM) blocking temperature. A similar phenomenon is observed after magnetic training processes at similar temperatures. These effects can be explained assuming that the boundaries of nanocrystalline grains in AFM layers exhibit lower transition temperatures than grain cores

  16. Isostructural magnetic phase transition and magnetocaloric effect in Ising antiferromagnet

    International Nuclear Information System (INIS)

    Lavanov, G.Yu; Kalita, V.M.; Loktev, V.M.

    2014-01-01

    It is shown that the external magnetic field induced isostructural I st order magnetic phase transition between antiferromagnetic phases with different antiferromagnetic vector values is associated with entropy. It is found, that depending on temperature the entropy jump and the related heat release change their sign at this transition point. In the low-temperature region of metamagnetic I st order phase tensition the entropy jump is positive, and in the triple point region this jump for isostructural magnetic transition is negative

  17. Organic ferroelectric opto-electronic memories

    NARCIS (Netherlands)

    Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

    2011-01-01

    Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

  18. Ferroelectrics under the Synchrotron Light: A Review

    Science.gov (United States)

    Fuentes-Cobas, Luis E.; Montero-Cabrera, María E.; Pardo, Lorena; Fuentes-Montero, Luis

    2015-01-01

    Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described. PMID:28787814

  19. Ferroelectrics under the Synchrotron Light: A Review

    Directory of Open Access Journals (Sweden)

    Luis E. Fuentes-Cobas

    2015-12-01

    Full Text Available Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS and X-ray absorption fine structure (XAFS experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described.

  20. Distribution of correlation radii in disordered ferroelectrics

    Czech Academy of Sciences Publication Activity Database

    Glinchuk, M. D.; Eliseev, E. A.; Stepanovich, V. A.; Jastrabík, Lubomír

    2002-01-01

    Roč. 81, č. 25 (2002), s. 4808-4810 ISSN 0003-6951 R&D Projects: GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : disordered ferroelectrics * distribution of correlation radii * polar nanoregions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.207, year: 2002

  1. Organic Nonvolatile Memory Devices Based on Ferroelectricity

    NARCIS (Netherlands)

    Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  2. Organic nonvolatile memory devices based on ferroelectricity

    NARCIS (Netherlands)

    Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  3. Giant electrocaloric effect in a cracked ferroelectrics

    Science.gov (United States)

    Huang, Cheng; Yang, Hai-Bing; Gao, Cun-Fa

    2018-04-01

    The electrocaloric effect (ECE) is the temperature change in a material induced by electrical field variation under adiabatic condition. Considering an external electric load applied on a cracked ferroelectric solid, a non-uniform electric field would be induced at the crack tip, and thus, incompatible strain field and local stress concentration would be generated around it. Furthermore, the enormous strain energy and the electrostatic energy would affect the polarization switching of the ferroelectric solid, important for the electrocaloric response. In this paper, the large negative and positive ECEs in a ferroelectric sheet with a conducting crack are investigated by the phase field method with the consideration of time-dependent Ginzburg-Landau equation. The numerical calculations indicated that the polarization field generates a sharp rise during the domain transition from polydomain to monodomain under a certain electric load. Large negative ECEs, about -10.21 K and -7.55 K, are obtained at 135 °C and 85 °C, respectively. The domain transition temperature is much lower than the Curie temperature, which enlarges the existence scope of the large ECE in ferroelectrics. The results also imply that the domain transition from a multi-domain state to a single domain takes place with the minimization of total free energy, which involves the courses of the electric field, stress field, temperature, and polarization interaction. Therefore, the non-uniform distributions of the stress-electric fields induced by the crack play an important role in ECE.

  4. From antiferroelectricity to ferroelectricity in smectic mesophases ...

    Indian Academy of Sciences (India)

    are not ferroelectric in the ground state, but upon alignment within an electric field .... Figure 3. Molecular organisation within polar smectic phases and possible ways to escape from a macroscopic polarisation in mesophases built up by polar layers. .... in which the molecules adapt a twisted orientation from the top to bottom.

  5. A hybrid ferroelectric-flash memory cells

    Science.gov (United States)

    Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

    2014-09-01

    A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

  6. Data retention in organic ferroelectric resistive switches

    NARCIS (Netherlands)

    Khikhlovskyi, V.; Breemen, A.J.J.M. van; Janssen, R.A.J.; Gelinck, G.H.; Kemerink, M.

    2016-01-01

    Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can

  7. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon

  8. Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

    Science.gov (United States)

    Hoffman, Jason D.; Wu, Stephen M.; Kirby, Brian J.; Bhattacharya, Anand

    2018-04-01

    Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show that by relaxing the strict criterion on pure antiferromagnetism, we can engineer an alternative class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a noncollinear magnetic phase in LaNiO3 /La2 /3Sr1 /3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying the superlattice spacing, strain, applied magnetic field, or temperature. By using this alternative "knob" to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagneticlike controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable properties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the noncollinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.

  9. Thermodynamic and critical properties of an antiferromagnetically stacked triangular Ising antiferromagnet in a field

    Science.gov (United States)

    Žukovič, M.; Borovský, M.; Bobák, A.

    2018-05-01

    We study a stacked triangular lattice Ising model with both intra- and inter-plane antiferromagnetic interactions in a field, by Monte Carlo simulation. We find only one phase transition from a paramagnetic to a partially disordered phase, which is of second order and 3D XY universality class. At low temperatures we identify two highly degenerate phases: at smaller (larger) fields the system shows long-range ordering in the stacking direction (within planes) but not in the planes (stacking direction). Nevertheless, crossovers to these phases do not have a character of conventional phase transitions but rather linear-chain-like excitations.

  10. Helical waves in easy-plane antiferromagnets

    Science.gov (United States)

    Semenov, Yuriy G.; Li, Xi-Lai; Xu, Xinyi; Kim, Ki Wook

    2017-12-01

    Effective spin torques can generate the Néel vector oscillations in antiferromagnets (AFMs). Here, it is theoretically shown that these torques applied at one end of a normal AFM strip can excite a helical type of spin wave in the strip whose properties are drastically different from characteristic spin waves. An analysis based on both a Néel vector dynamical equation and the micromagnetic simulation identifies the direction of magnetic anisotropy and the damping factor as the two key parameters determining the dynamics. Helical wave propagation requires the hard axis of the easy-plane AFM to be aligned with the traveling direction, while the damping limits its spatial extent. If the damping is neglected, the calculation leads to a uniform periodic domain wall structure. On the other hand, finite damping decelerates the helical wave rotation around the hard axis, ultimately causing stoppage of its propagation along the strip. With the group velocity staying close to spin-wave velocity at the wave front, the wavelength becomes correspondingly longer away from the excitation point. In a sufficiently short strip, a steady-state oscillation can be established whose frequency is controlled by the waveguide length as well as the excitation energy or torque.

  11. Antiferromagnetism and magnetoleasticity of UNiAl

    International Nuclear Information System (INIS)

    Sechovsky, V.; Honda, F.; Svoboda, P.; Prokes, K.; Chernyavsky, O.; Doerr, M.; Rotter, M.; Loewenhaupt, M.

    2003-01-01

    We report on a thermal-expansion (TE) and magnetostriction (MS) study of the antiferromagnet UNiAl at temperatures 2-90 K and in magnetic fields up to 16.5 T applied along the c-axis. The TE along the c-axis (in 0 T) exhibits a broad valley centered around 35 K. This anomaly is nearly removed in 16.5 T. For T≤7 K a sharp metamagnetic transition (MT) observed in UNiAl at 11.4 T and it is accompanied by abrupt MS effects of +1.3x10 -4 and -1.8x10 -4 along the a- and c-axis, respectively. In fields above the MT a negligible additional negative MS is induced along c-axis whereas the a-axis and consequently the volume expand considerably, which indicates a field-induced enhancement of the U magnetic moment. T>7 K, the MT becomes gradually smeared out but a non-negligible MS is observed even for T>T N . In the light of these results the TE anomaly measured in zero field may be attributed to AF that survives at temperatures far above T N

  12. Weyl magnons in noncoplanar stacked kagome antiferromagnets

    Science.gov (United States)

    Owerre, S. A.

    2018-03-01

    Weyl nodes have been experimentally realized in photonic, electronic, and phononic crystals. However, magnonic Weyl nodes are yet to be seen experimentally. In this paper, we propose Weyl magnon nodes in noncoplanar stacked frustrated kagome antiferromagnets, naturally available in various real materials. Most crucially, the Weyl nodes in the current system occur at the lowest excitation and possess a topological thermal Hall effect, therefore they are experimentally accessible at low temperatures due to the population effect of bosonic quasiparticles. In stark contrast to other magnetic systems, the current Weyl nodes do not rely on time-reversal symmetry breaking by the magnetic order. Rather, they result from explicit macroscopically broken time reversal symmetry by the scalar spin chirality of noncoplanar spin textures and can be generalized to chiral spin liquid states. Moreover, the scalar spin chirality gives a real space Berry curvature which is not available in previously studied magnetic Weyl systems. We show the existence of magnon arc surface states connecting projected Weyl magnon nodes on the surface Brillouin zone. We also uncover the first realization of triply-degenerate nodal magnon point in the noncollinear regime with zero scalar spin chirality.

  13. Antiferromagnetic Skyrmion: Stability, Creation and Manipulation

    Science.gov (United States)

    Zhang, Xichao; Zhou, Yan; Ezawa, Motohiko

    2016-04-01

    Magnetic skyrmions are particle-like topological excitations in ferromagnets, which have the topo-logical number Q = ± 1, and hence show the skyrmion Hall effect (SkHE) due to the Magnus force effect originating from the topology. Here, we propose the counterpart of the magnetic skyrmion in the antiferromagnetic (AFM) system, that is, the AFM skyrmion, which is topologically protected but without showing the SkHE. Two approaches for creating the AFM skyrmion have been described based on micromagnetic lattice simulations: (i) by injecting a vertical spin-polarized current to a nanodisk with the AFM ground state; (ii) by converting an AFM domain-wall pair in a nanowire junction. It is demonstrated that the AFM skyrmion, driven by the spin-polarized current, can move straightly over long distance, benefiting from the absence of the SkHE. Our results will open a new strategy on designing the novel spintronic devices based on AFM materials.

  14. Dilute antiferromagnetism in magnetically doped phosphorene

    Directory of Open Access Journals (Sweden)

    Andrew Allerdt

    2017-11-01

    Full Text Available We study the competition between Kondo physics and indirect exchange on monolayer black phos-phorous using a realistic description of the band structure in combination with the density matrixrenormalization group (DMRG method. The Hamiltonian is reduced to a one-dimensional problemvia an exact canonical transformation that makes it amenable to DMRG calculations, yielding exactresults that fully incorporate the many-body physics. We find that a perturbative description of theproblem is not appropriate and cannot account for the slow decay of the correlations and the completelack of ferromagnetism. In addition, at some particular distances, the impurities decouple formingtheir own independent Kondo states. This can be predicted from the nodes of the Lindhard function.Our results indicate a possible route toward realizing dilute anti-ferromagnetism in phosphorene. Received: 19 September 2017, Accepted: 12 October 2017; Edited by: K. Hallberg; DOI: http://dx.doi.org/10.4279/PIP.090008 Cite as: A Allerdt, A E Feiguin, Papers in Physics 9, 090008 (2017

  15. Room-temperature antiferromagnetic memory resistor.

    Science.gov (United States)

    Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

    2014-04-01

    The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

  16. Quantum disordered phase in a doped antiferromagnet

    International Nuclear Information System (INIS)

    Kuebert, C.; Muramatsu, A.

    1995-01-01

    A quantitative description of the transition to a quantum disordered phase in a doped antiferromagnet is obtained for the long-wavelength limit of the spin-fermion model, which is given by the O(3) non-linear σ model, a free fermionic part and current-current interactions. By choosing local spin quantization axes for the fermionic spinor we show that the low-energy limit of the model is equivalent to a U(1) gauge theory, where both the bosonic and fermionic degrees of freedom are minimally coupled to a vector gauge field. Within a large-N expansion, the strength of the gauge fields is found to be determined by the gap in the spin-wave spectrum, which is dynamically generated. The explicit doping dependence of the spin-gap is determined as a function of the parameters of the original model. As a consequence of the above, the gauge-fields mediate a long-range interaction among dopant holes and S-1/2 magnetic excitations only in the quantum disordered phase. The possible bound-states in this regime correspond to charge-spin separation and pairing

  17. A note on structural and dielectric properties of BiFeO3- PbTiO3 and BiFeO3- PbZrO3 composites

    International Nuclear Information System (INIS)

    Satpathy, S. K.; Mohanty, N. K.; Behera, A. K.; Behera, B.; Nayak, P.

    2015-01-01

    The composites of BiFeO 3 -PbTiO 3 (BF-PT) and BiFeO 3 -PbZrO 3 (BF-PZ) were prepared by mixed oxide method. Room temperature X-ray diffraction data confirms the rhombohedral and tetragonal crystal structure respectively. Dielectric constant of BF-PZ is found to give high value compared to BF-PT and hence, there is an increase value of ac conductivity for the former. Both the composites show negative temperature coefficient of resistance (NTCR) behavior. The activation energies of BF-PT and BF-PZ are found to be 0.35 eV and 0.53 eV respectively. The d 33 coefficients are found to be 2.0 and 2.1 pC/N for BF-PT and BF-PZ respectively

  18. Structural phase transition and magnetic properties of Er-doped BiFeO3 nanoparticles

    International Nuclear Information System (INIS)

    Li, Y T; Zhang, H G; Dong, X G; Li, Q; Mao, W W; Dong, C L; Ren, S L; Li, X A; Wei, S Q

    2013-01-01

    The structural phase transition and local structural distortion of Er-doped BiFeO 3 nanoparticles have been discussed in order to understand the variation of magnetic properties in this system. The X-ray diffraction patterns and X-ray absorption fine structure of these samples demonstrate that there is structural phase transition and no obvious local structural distortion with the increasing of doping concentration. Unfortunately, no ferromagnetic properties have been observed even at a lower temperature. And the X-ray absorption spectra of Fe 2p core level of these samples are totally same, especially the energy positions do not shift which means the consistent valence states of Fe ions.

  19. Critical slowing down of spin fluctuations in BiFeO3

    International Nuclear Information System (INIS)

    Scott, J F; Singh, M K; Katiyar, R S

    2008-01-01

    In earlier work we reported the discovery of phase transitions in BiFeO 3 evidenced by divergences in the magnon light-scattering cross-sections at 140 and 201 K (Singh et al 2008 J. Phys.: Condens. Matter 20 252203) and fitted these intensity data to critical exponents α = 0.06 and α' = 0.10 (Scott et al 2008 J. Phys.: Condens. Matter 20 322203), under the assumption that the transitions are strongly magnetoelastic (Redfern et al 2008 at press) and couple to strain divergences through the Pippard relationship (Pippard 1956 Phil. Mag. 1 473). In the present paper we extend those criticality studies to examine the magnon linewidths, which exhibit critical slowing down (and hence linewidth narrowing) of spin fluctuations. The linewidth data near the two transitions are qualitatively different and we cannot reliably extract a critical exponent ν, although the mean field value ν = 1/2 gives a good fit near the lower transition.

  20. Investigation on structural, Mössbauer and ferroelectric properties of (1−x)PbFe{sub 0.5}Nb{sub 0.5}O{sub 3}–(x)BiFeO{sub 3} solid solution

    Energy Technology Data Exchange (ETDEWEB)

    Dadami, Sunanda T.; Matteppanavar, Shidaling; Shivaraja, I. [Department of Physics, JB Campus, Bangalore University, Bangalore 560056 (India); Rayaprol, Sudhindra [UGC-DAE-Consortium for Scientific Research, Mumbai Centre, BARC Campus, Mumbai 400085 (India); Angadi, Basavaraj, E-mail: brangadi@gmail.com [Department of Physics, JB Campus, Bangalore University, Bangalore 560056 (India); Sahoo, Balaram [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)

    2016-11-15

    In this study, (1−x)PbFe{sub 0.5}Nb{sub 0.5}O{sub 3}(PFN)–(x)BiFeO{sub 3}(BFO) multiferroic solid solutions with x=0.0, 0.1, 0.2, 0.3 and 0.4 were synthesized through single step solid state reaction method and characterized thoroughly through X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Fourier Transform Infra-Red (FTIR), Raman, Mössbauer spectroscopy and ferroelectric studies. The room temperature (RT) XRD studies confirmed the formation of single phase with negligible amount of secondary phases (x=0.2 and 0.4). The zoomed XRD patterns of (1−x)PFN–(x)BFO solid solutions showed the clear structural phase transition from monoclinic (Cm) to rhombohedral (R3c) at x=0.4. The Raman spectra of the (1−x)PFN–(x)BFO solid solutions showed the composition dependent phase transition from monoclinic (Cm) to rhombohedral (R3c). With increasing x in PFN, the modes related monoclinic symmetry changes to those of rhombohedral symmetry. The RT Mössbauer spectroscopy results evidenced the existence of composition dependent phase transition from paramagnetic to weak antiferromagnetic ordering and weak antiferromagnetic to antiferromagnetic ordering. The Mössbauer spectroscopy showed paramagnetic behavior with a doublet for x=0.0, 0.1 and 0.2 are shows the weak antiferromagnetic with paramagnetic ordering. For x=0.3 and 0.4 shows the sextet pattern and it is a clear evidence of antiferromagnetism. The ferroelectric (P–E) loops at RT indicate the presence of small polarization, as the x concentration increases in PFN, the remnant polarization and coercive field were decreased, which may due to the increase in the conductivity and leaky behavior of the samples. - Highlights: • Structural, Mössbauer, ferroelectric studies on (1−x)PFN–xBiFeO{sub 3} multiferroics. • Composition dependent changes in crystallographic and magnetic structure. • System exhibits phase transition from monoclinic to rhombohedral with x. • Supporting results from Raman

  1. Structural, magnetic and dielectric properties of Pr-modified BiFeO3 multiferroic

    International Nuclear Information System (INIS)

    Varshney, Dinesh; Sharma, Poorva; Satapathy, S.; Gupta, P.K.

    2014-01-01

    Graphical abstract: -- Highlights: • BFO and Bi 0.95 Pr 0.05 FeO 3 prepared successfully via solid state reaction route. • XRD confirms rhombohedral structure with space group R3c. • Relaxation process is attributed to thermal motion and hopping of V O 2+ . • Magnetization is enhanced in Bi 0.95 Pr 0.05 FeO 3 sample. • Enhanced magnetization stem from suppression of the spiral spin modulation. -- Abstract: The structural, vibrational, magnetic and dielectric properties of polycrystalline BiFeO 3 and Bi 0.95 Pr 0.05 FeO 3 are investigated by combining X-ray diffraction, Raman scattering spectra, magnetometry and dielectric measurements. Structural symmetry with rhombohedral R3c phase is revealed for both parent and 5% Pr substitution at Bi site, serving no chemical pressure and causes no structural transition from R3c to any other phase is identified from X-ray diffraction patterns and Raman scattering spectra. The shifting of phonon modes towards higher frequency side is attributed to lower atomic mass of Pr ion as compared to Bi ion. The magnetic measurements at room temperature indicate that Pr substitution induces ferromagnetism and discerns large and non-zero remnant magnetization as compare to pristine BiFeO 3 . Both dielectric permittivity and loss factor of Bi 0.95 Pr 0.05 FeO 3 strongly decreases with increased frequency. Significant role of hopping of oxygen ion vacancies in Bi 0.95 Pr 0.05 FeO 3 is inferred from modulus spectra and ac conductivity analysis

  2. Síntese e caracterização de perovesquites do sistema BiFeO3

    OpenAIRE

    Carvalho, Teresa Maria Tranchete de

    2007-01-01

    Dissertação de Mestrado em Física e Química para o Ensino, apresentada à Universidade de Trás-os-Montes e Alto Douro Os materiais multiferróicos, como o caso do BiFeO3, são bastante promissores em termos tecnológicos, possuindo uma potencial aplicação em sensores, memórias não voláteis e actuadores. A perovesquite BiFeO3 apresenta vantagens relativamente a outros compostos multiferróicos: elevada temperatura de Curie (TC=1100 K); elevada temperatura de Néel (TN=640 K); não contém chumbo...

  3. Ferroelectric domain engineering by focused infrared femtosecond pulses

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin; Shvedov, Vladlen; Sheng, Yan, E-mail: yan.sheng@anu.edu.au [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Karpinski, Pawel [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Wroclaw University of Technology, Wybrzeze Wyspianskiego, Wroclaw (Poland); Koynov, Kaloian [Max-Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz (Germany); Wang, Bingxia; Trull, Jose; Cojocaru, Crina [Departament de Fisica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Rambla Sant Nebridi, 08222 Terrassa, Barcelona (Spain); Krolikowski, Wieslaw [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Texas A& M University at Qatar, Doha (Qatar)

    2015-10-05

    We demonstrate infrared femtosecond laser-induced inversion of ferroelectric domains. This process can be realised solely by using tightly focused laser pulses without application of any electric field prior to, in conjunction with, or subsequent to the laser irradiation. As most ferroelectric crystals like LiNbO{sub 3}, LiTaO{sub 3}, and KTiOPO{sub 4} are transparent in the infrared, this optical poling method allows one to form ferroelectric domain patterns much deeper inside a ferroelectric crystal than by using ultraviolet light and hence can be used to fabricate practical devices. We also propose in situ diagnostics of the ferroelectric domain inversion process by monitoring the Čerenkov second harmonic signal, which is sensitive to the appearance of ferroelectric domain walls.

  4. Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

    Science.gov (United States)

    Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

    2016-02-19

    We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

  5. Patterned piezo-, pyro-, and ferroelectricity of poled polymer electrets

    International Nuclear Information System (INIS)

    Qiu, Xunlin

    2010-01-01

    Polymers with strong piezo-, pyro-, and ferroelectricity are attractive for a wide range of applications. In particular, semicrystalline ferroelectric polymers are suitable for a large variety of piezo- and pyroelectric transducers or sensors, while amorphous polymers containing chromophore molecules are particularly interesting for photonic devices. Recently, a new class of polymer materials has been added to this family: internally charged cellular space-charge polymer electrets (so-called “ferroelectrets”), whose piezoelectricity can be orders of magnitude higher than that of conventional ferroelectric polymers. Suitable patterning of these materials leads to improved or unusual macroscopic piezo-, pyro-, and ferroelectric or nonlinear optical properties that may be particularly useful for advanced transducer or waveguide applications. In the present paper, the piezo-, pyro-, and ferroelectricity of poled polymers is briefly introduced, an overview on the preparation of polymer electrets with patterned piezo-, pyro-, and ferroelectricity is provided and a survey of selected applications is presented.

  6. Residual tensile stresses and piezoelectric properties in BiFeO3-Bi(Zn1/2Ti1/2O3-PbTiO3 ternary solid solution perovskite ceramics

    Directory of Open Access Journals (Sweden)

    Weilin Zheng

    2016-08-01

    Full Text Available For low dielectric loss perovskite-structured (1-x-yBiFeO3-xBi(Zn1/2Ti1/2O3-yPbTiO3 (BF-BZT-PT (x = 0.04-0.15 and y = 0.15-0.26 ceramics in rhombohedral/tetragonal coexistent phase, structural phase transitions were studied using differential thermal analyzer combined with temperature-dependent dielectric measurement. Two lattice structural phase transitions are disclosed in various BF-BZT-PT perovskites, which is different from its membership of BiFeO3 exhibiting just one lattice structural phase transition at Curie temperature TC= 830oC. Consequently, residual internal tensile stresses were revealed experimentally through XRD measurements on ceramic pellets and counterpart powders, which are reasonably attributed to special structural phase transition sequence of BF-BZT-PT solid solution perovskites. Low piezoresponse was observed and argued extrinsically resulting from residual tensile stresses pinning ferroelectric polarization switching. Post-annealing and subsequent quenching was found effective for eliminating residual internal stresses in those BZT-less ceramics, and good piezoelectric property of d33 ≥ 28 pC/N obtained for 0.70BF-0.08BZT-0.22PT and 0.05 wt% MnO2-doped 0.70BF-0.04BZT-0.26PT ceramics with TC ≥ 640oC, while it seemed no effective for those BZT-rich BF-BZT-PT ceramics with x = 0.14 and 0.15 studied here.

  7. Accuracy and Transferability of Ab Initio Electronic Band Structure Calculations for Doped BiFeO3

    Science.gov (United States)

    Gebhardt, Julian; Rappe, Andrew M.

    2017-11-01

    BiFeO3 is a multiferroic material and, therefore, highly interesting with respect to future oxide electronics. In order to realize such devices, pn junctions need to be fabricated, which are currently impeded by the lack of successful p-type doping in this material. In order to guide the numerous research efforts in this field, we recently finished a comprehensive computational study, investigating the influence of many dopants onto the electronic structure of BiFeO3. In order to allow for this large scale ab initio study, the computational setup had to be accurate and efficient. Here we discuss the details of this assessment, showing that standard density-functional theory (DFT) yields good structural properties. The obtained electronic structure, however, suffers from well-known shortcomings. By comparing the conventional DFT results for alkali and alkaline-earth metal doping with more accurate hybrid-DFT calculations, we show that, in this case, the problems of standard DFT go beyond a simple systematic error. Conventional DFT shows bad transferability and the more reliable hybrid-DFT has to be chosen for a qualitatively correct prediction of doping induced changes in the electronic structure of BiFeO3.

  8. Influence of the collector and heat treatment in the structure of BiFeO_3 electrospun nanofibers

    International Nuclear Information System (INIS)

    Melo, G.H.F.; Santos, J.P.F.; Bretas, R.E.S.

    2016-01-01

    The objective of this work was to analyze the influence of the collector type and heat treatment on the morphology and crystalline phases of BiFeO_3 electrospun nanofibers. A solution containing (Fe(NO_3)_3_._9H_2O and Bi(NO_3)_3_._5H_2O) as precursors together with a polyvinylpyrrolidone solution was electrospun using 2.8KV/cm as electrical field. The collector type was however, changed (aluminum and glass). After the electrospinning, the as-spun nanofibers were submitted to two different heat treatments: one at 550°C and the other at 750°C, both during 2h. The collector type changed the morphology of the nanofibers; while in the glass collector, a non-woven mat of flat and rough nanofibers was obtained, in the aluminum collector, mats of circular and smooth nanofibers were obtained. The thermal treatment also changed the morphology and amount of crystalline phases; at 550°C, the nanofiber morphology was maintained and only one crystalline phase (BiFeO_3) was detected. On the other hand, at 750°C, flakes were obtained of two crystalline phases (BiFeO_3 and Bi_2Fe_4O_9). (author)

  9. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

    International Nuclear Information System (INIS)

    Yurchuk, Ekaterina

    2015-01-01

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  10. Magnetization manipulation in multiferroic devices.

    Science.gov (United States)

    Gajek, Martin; Martin, Lane; Hao Chu, Ying; Huijben, Mark; Barry, Micky; Ramesh, Ramamoorthy

    2008-03-01

    Controlling magnetization by purely electrical means is a a central topic in spintronics. A very recent route towards this goal is to exploit the coupling between multiple ferroic orders which coexist in multiferroic materials. BiFeO3 (BFO) displays antiferromagnetic and ferroelectric orderings at room temperature and can thus be used as an electrically controllable pinning layer for a ferromagnetic electrode. Furthermore BFO remains ferroelectric down to 2nm and can therefore be integrated as a tunnel barrier in MTJ's. We will describe these two architecture schemes and report on our progresses towards the control of magnetization via the multiferroic layer in those structures.

  11. Ferroelectric devices, interconnects, and methods of manufacture thereof

    KAUST Repository

    Alshareef, Husam N.

    2013-12-12

    A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

  12. A Temperature-Dependent Hysteresis Model for Relaxor Ferroelectric Compounds

    National Research Council Canada - National Science Library

    Raye, Julie K; Smith, Ralph C

    2004-01-01

    This paper summarizes the development of a homogenized free energy model which characterizes the temperature-dependent hysteresis and constitutive nonlinearities inherent to relaxor ferroelectric materials...

  13. Ferroelectric devices, interconnects, and methods of manufacture thereof

    KAUST Repository

    Alshareef, Husam N.; Unnat, Bhansali; Khan, Mohd Adnan; Saleh, Moussa M.; Odeh, Ihab N.

    2013-01-01

    A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

  14. Ferroelectric nanostructure having switchable multi-stable vortex states

    Science.gov (United States)

    Naumov, Ivan I [Fayetteville, AR; Bellaiche, Laurent M [Fayetteville, AR; Prosandeev, Sergey A [Fayetteville, AR; Ponomareva, Inna V [Fayetteville, AR; Kornev, Igor A [Fayetteville, AR

    2009-09-22

    A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

  15. Identifying Two-Dimensional Z 2 Antiferromagnetic Topological Insulators

    Science.gov (United States)

    Bègue, F.; Pujol, P.; Ramazashvili, R.

    2018-01-01

    We revisit the question of whether a two-dimensional topological insulator may arise in a commensurate Néel antiferromagnet, where staggered magnetization breaks the symmetry with respect to both elementary translation and time reversal, but retains their product as a symmetry. In contrast to the so-called Z 2 topological insulators, an exhaustive characterization of antiferromagnetic topological phases with the help of topological invariants has been missing. We analyze a simple model of an antiferromagnetic topological insulator and chart its phase diagram, using a recently proposed criterion for centrosymmetric systems [13]. We then adapt two methods, originally designed for paramagnetic systems, and make antiferromagnetic topological phases manifest. The proposed methods apply far beyond the particular examples treated in this work, and admit straightforward generalization. We illustrate this by two examples of non-centrosymmetric systems, where no simple criteria have been known to identify topological phases. We also present, for some cases, an explicit construction of edge states in an antiferromagnetic topological insulator.

  16. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

    Science.gov (United States)

    Galceran, R; Fina, I; Cisneros-Fernández, J; Bozzo, B; Frontera, C; López-Mir, L; Deniz, H; Park, K-W; Park, B-G; Balcells, Ll; Martí, X; Jungwirth, T; Martínez, B

    2016-10-20

    Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.

  17. R-curve behaviour of ferroelectric ceramics

    International Nuclear Information System (INIS)

    Egorov, N.Ya.; Kramarov, S.O.

    2004-01-01

    The attempt's made to identify and evaluate the regularities of developing the fractures in the ferroelectric ceramics and also-study the effect of the polishing operation on the strength characteristics of the piezoceramics. The R-curve behaviour in the ferroelectric ceramics is studied on the samples of the barium titanate and lead zirconate-titanate by the four-point bending with controlled surface fractures. It is established that increasing curve of resistance to the fracture growth is observed in the piezoceramics under the conditions of the fracture stable growth. The results obtained on the polished samples prove that the mechanical processing introduces the compression surface stresses into the piezoceramic materials [ru

  18. High-Tc ferroelectrics and superconductors

    International Nuclear Information System (INIS)

    Muller, K.A.

    1990-01-01

    The meaning of the title refers to transition temperatures T c in ferroelectrics (FE) and superconductors (S). The highest T c 's in either field are observed in oxides: 1770 K in the ferroelectric La 2 TiO 7 and 125 K in the superconductor Tl 2 Ca 2 Cu 3 O 10 . Therefore, the question can be asked whether the observed high T c 's in oxide FE and S are a pure coincidence or whether there may be an underlying reason for it. This question is addressed first by recalling recent advances concerning anharmonic FE-properties and then by reviewing S-findings in the new compounds related to these properties

  19. Domain switching of fatigued ferroelectric thin films

    Science.gov (United States)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-05-01

    We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  20. Domain switching of fatigued ferroelectric thin films

    International Nuclear Information System (INIS)

    Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

    2014-01-01

    We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

  1. A ferroelectric memory technology for embedded LSI

    CERN Document Server

    Kunio, T

    1999-01-01

    We have developed an FeRAM (Ferroelectric Random Access Memory) embedded smart card LSI by using double metal 0.8- mu m CMOS technology. The smart-card has a 256-byte FeRAM macro and an 8-bit microcontroller. The FeRAM macro has the $9 performance of 10/sup 8/ endurance cycles and is half the size of an EEPROM macro. We have also developed a new CMVP (Capacitor on Meta/Via Stacked Plug) cell for an advanced FeRAM embedded LSI by using 0.25- mu m CMOS technology. $9 The ferroelectric capacitors of this cell are fabricated after the multiple interconnect is formed, and a cell area of 3.2 mu m/sup 2/ is obtained. (8 refs).

  2. Fast Ferroelectric L-band Tuner

    International Nuclear Information System (INIS)

    Kazakov, S. Yu.; Yakovlev, V. P.; Hirshfield, J. L.; Kanareykin, A. D.; Nenasheva, E. A.

    2006-01-01

    Description is given of a preliminary conceptual design for a tuner that employs a new ferroelectric ceramic that allows fast changes in coupling between the SRF acceleration structure of a linac and the external RF feeding line. The switching time of this device is in the range of a few microseconds. Utilization of this tuner is predicted to decrease Ohmic losses in the acceleration structure and thereby to reduce the power consumption of the linac. Using parameters of the TESLA-800 collider as an example, it is shown that it may be possible to reduce the ac mains power consumption by 12 MW, or about by 10%. The design of the tuner that is described allows reduced pulsed and average heating of the ferroelectric ceramics

  3. Fracture mechanics of piezoelectric and ferroelectric solids

    CERN Document Server

    Fang, Daining

    2013-01-01

    Fracture Mechanics of Piezoelectric and Ferroelectric Solids presents a systematic and comprehensive coverage of the fracture mechanics of piezoelectric/ferroelectric materials, which includes the theoretical analysis, numerical computations and experimental observations. The main emphasis is placed on the mechanics description of various crack problems such static, dynamic and interface fractures as well as the physical explanations for the mechanism of electrically induced fracture. The book is intended for postgraduate students, researchers and engineers in the fields of solid mechanics, applied physics, material science and mechanical engineering. Dr. Daining Fang is a professor at the School of Aerospace, Tsinghua University, China; Dr. Jinxi Liu is a professor at the Department of Engineering Mechanics, Shijiazhuang Railway Institute, China.

  4. Light-Activated Gigahertz Ferroelectric Domain Dynamics

    Science.gov (United States)

    Akamatsu, Hirofumi; Yuan, Yakun; Stoica, Vladimir A.; Stone, Greg; Yang, Tiannan; Hong, Zijian; Lei, Shiming; Zhu, Yi; Haislmaier, Ryan C.; Freeland, John W.; Chen, Long-Qing; Wen, Haidan; Gopalan, Venkatraman

    2018-03-01

    Using time- and spatially resolved hard x-ray diffraction microscopy, the striking structural and electrical dynamics upon optical excitation of a single crystal of BaTiO3 are simultaneously captured on subnanoseconds and nanoscale within individual ferroelectric domains and across walls. A large emergent photoinduced electric field of up to 20 ×106 V /m is discovered in a surface layer of the crystal, which then drives polarization and lattice dynamics that are dramatically distinct in a surface layer versus bulk regions. A dynamical phase-field modeling method is developed that reveals the microscopic origin of these dynamics, leading to gigahertz polarization and elastic waves traveling in the crystal with sonic speeds and spatially varying frequencies. The advances in spatiotemporal imaging and dynamical modeling tools open up opportunities for disentangling ultrafast processes in complex mesoscale structures such as ferroelectric domains.

  5. High temperature phases in PZT ferroelectric films

    Czech Academy of Sciences Publication Activity Database

    Deineka, Alexander; Suchaneck, G.; Jastrabík, Lubomír; Gerlach, G.

    2003-01-01

    Roč. 293, - (2003), s. 111-118 ISSN 0015-0193 R&D Projects: GA ČR GP202/02/D078; GA MŠk LN00A015 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferroelectric film * phase transition * film profile Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.406, year: 2003

  6. Resonant tunneling across a ferroelectric domain wall

    Science.gov (United States)

    Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.

    2018-04-01

    Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

  7. Ferroelectricity with Ferromagnetic Moment in Orthoferrites

    Science.gov (United States)

    Tokunaga, Yusuke

    2010-03-01

    Exotic multiferroics with gigantic magnetoelectric (ME) coupling have recently been attracting broad interests from the viewpoints of both fundamental physics and possible technological application to next-generation spintronic devices. To attain a strong ME coupling, it would be preferable that the ferroelectric order is induced by the magnetic order. Nevertheless, the magnetically induced ferroelectric state with the spontaneous ferromagnetic moment is still quite rare apart from a few conical-spin multiferroics. To further explore multiferroic materials with both the strong ME coupling and spontaneous magnetization, we focused on materials with magnetic structures other than conical structure. In this talk we present that the most orthodox perovskite ferrite systems DyFeO3 and GdFeO3 have ``ferromagnetic-ferroelectric,'' i.e., genuinely multiferroic states in which weak ferromagnetic moment is induced by Dzyaloshinskii-Moriya interaction working on Fe spins and electric polarization originates from the striction due to symmetric exchange interaction between Fe and Dy (Gd) spins [1] [2]. Both materials showed large electric polarization (>0.1 μC/cm^2) and strong ME coupling. In addition, we succeeded in mutual control of magnetization and polarization with electric- and magnetic-fields in GdFeO3, and attributed the controllability to novel, composite domain wall structure. [4pt] [1] Y. Tokunaga et al., Phys. Rev. Lett. 101, 097205 (2008). [0pt] [2] Y. Tokunaga et al., Nature Mater. 8, 558 (2009).

  8. Role of the antiferromagnetic bulk spins in exchange bias

    Energy Technology Data Exchange (ETDEWEB)

    Schuller, Ivan K. [Center for Advanced Nanoscience and Physics Department, University of California San Diego, La Jolla, CA 92093 (United States); Morales, Rafael, E-mail: rafael.morales@ehu.es [Department of Chemical-Physics & BCMaterials, University of the Basque Country UPV/EHU (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Batlle, Xavier [Departament Física Fonamental and Institut de Nanociència i Nanotecnologia, Universitat de Barcelona, c/ Martí i Franqués s/n, 08028 Barcelona, Catalonia (Spain); Nowak, Ulrich [Department of Physics, University of Konstanz, 78464 Konstanz (Germany); Güntherodt, Gernot [Physics Institute (IIA), RWTH Aachen University, Campus RWTH-Melaten, 52074 Aachen (Germany)

    2016-10-15

    This “Critical Focused Issue” presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this bulk, pinned uncompensated moments as a new type of a ferromagnet which has a low total moment, an ordering temperature given by the AFM Néel temperature, with parallel aligned moments randomly distributed on the regular AFM lattice. - Highlights: • We address the role of bulk antiferromagnetic spins in the exchange bias phenomenon. • Significant experiments on how bulk AFM spins determine exchange bias are highlighted. • We explain the model that accounts for experimental results.

  9. Vertex functions at finite momentum: Application to antiferromagnetic quantum criticality

    Science.gov (United States)

    Wölfle, Peter; Abrahams, Elihu

    2016-02-01

    We analyze the three-point vertex function that describes the coupling of fermionic particle-hole pairs in a metal to spin or charge fluctuations at nonzero momentum. We consider Ward identities, which connect two-particle vertex functions to the self-energy, in the framework of a Hubbard model. These are derived using conservation laws following from local symmetries. The generators considered are the spin density and particle density. It is shown that at certain antiferromagnetic critical points, where the quasiparticle effective mass is diverging, the vertex function describing the coupling of particle-hole pairs to the spin density Fourier component at the antiferromagnetic wave vector is also divergent. Then we give an explicit calculation of the irreducible vertex function for the case of three-dimensional antiferromagnetic fluctuations, and show that it is proportional to the diverging quasiparticle effective mass.

  10. Role of the antiferromagnetic bulk spins in exchange bias

    International Nuclear Information System (INIS)

    Schuller, Ivan K.; Morales, Rafael; Batlle, Xavier; Nowak, Ulrich; Güntherodt, Gernot

    2016-01-01

    This “Critical Focused Issue” presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this bulk, pinned uncompensated moments as a new type of a ferromagnet which has a low total moment, an ordering temperature given by the AFM Néel temperature, with parallel aligned moments randomly distributed on the regular AFM lattice. - Highlights: • We address the role of bulk antiferromagnetic spins in the exchange bias phenomenon. • Significant experiments on how bulk AFM spins determine exchange bias are highlighted. • We explain the model that accounts for experimental results.

  11. Antiferromagnetic phase of the gapless semiconductor V3Al

    Science.gov (United States)

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D.; Lewis, L. H.; Saúl, A. A.; Radtke, G.; Heiman, D.

    2015-03-01

    Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D 03 phase of V3Al was successfully synthesized via arc-melting and annealing. The AF properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing AF elements.

  12. Anti-ferromagnetic Heisenberg model on bilayer honeycomb

    International Nuclear Information System (INIS)

    Shoja, M.; Shahbazi, F.

    2012-01-01

    Recent experiment on spin-3/2 bilayer honeycomb lattice antiferromagnet Bi 3 Mn 4 O 12 (NO 3 ) shows a spin liquid behavior down to very low temperatures. This behavior can be ascribed to the frustration effect due to competitions between first and second nearest neighbour's antiferromagnet interaction. Motivated by the experiment, we study J 1 -J 2 Antiferromagnet Heisenberg model, using Mean field Theory. This calculation shows highly degenerate ground state. We also calculate the effect of second nearest neighbor through z direction and show these neighbors also increase frustration in these systems. Because of these degenerate ground state in these systems, spins can't find any ground state to be freeze in low temperatures. This behavior shows a novel spin liquid state down to very low temperatures.

  13. Phase-Field Simulations of Topological Structures and Topological Phase Transitions in Ferroelectric Oxide Heterostructures

    Science.gov (United States)

    Zijian Hong

    of insulating STO is further revealed, which shows that a rich phase diagram can be formed by simply tuning the thickness of this layer. Wave-like polar spiral phase is simulated by substituting part of the PTO with BiFeO3 (BFO) in the PTO/STO superlattice (i.e., in a (PTO) 4/(BFO)4/(PTO)4/(STO)12 tricolor system) which has demonstrate ordered polar vortex lattice. This spiral phase is made up of semi-vortex cores that are floating up-down in the ferroelectric PTO layers, giving rise to a net in-plane polarization. An increase of Curie temperature and topological to regular domain transition temperature (over 200 K) is observed, due to the higher Curie temperature and larger spontaneous polarization in BFO layers. This unidirectional spiral state can be reversibly switched by experimentally feasible in-plane field, which evolves into a metastable vortex structure in-between two spiral phases with opposite in-plane directions. (Abstract shortened by ProQuest.).

  14. Spin waves in antiferromagnetic FeF2

    DEFF Research Database (Denmark)

    Hutchings, M T; Rainford, B.D.; Guggenheim, H J

    1970-01-01

    Spin-wave dispersion in antiferromagnetic FeF2 has been investigated by inelastic neutron scattering using a chopper time-of-flight spectrometer. The single mode observed has a relatively flat dispersion curve rising from 53 cm-1 at the zone centre to 79 cm-1 at the zone boundary. A spin Hamilton......Spin-wave dispersion in antiferromagnetic FeF2 has been investigated by inelastic neutron scattering using a chopper time-of-flight spectrometer. The single mode observed has a relatively flat dispersion curve rising from 53 cm-1 at the zone centre to 79 cm-1 at the zone boundary. A spin...

  15. Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

    KAUST Repository

    Manchon, Aurelien

    2017-01-01

    We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

  16. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  17. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  18. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, M.; Asadi, K. (Kamal); Blom, P.W.M.; Leeuw, de D.M.

    2012-01-01

    The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  19. The operational mechanism of ferroelectric-driven organic resistive switches

    NARCIS (Netherlands)

    Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

    The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

  20. Dynamic Control of Tunneling Conductance in Ferroelectric Tunnel Junctions

    International Nuclear Information System (INIS)

    Zou Ya-Yi; Zhou Yan; Chew Khian-Hooi

    2013-01-01

    We investigate the dynamic characteristics of electric polarization P(t) in a ferroelectric junction under ac applied voltage and stress, and calculate the frequency response and the cut-off frequency f 0 , which provides a reference for the upper limit of the working frequency. Our study might be significant for sensor and memory applications of nanodevices based on ferroelectric junctions

  1. Geometric shape control of thin film ferroelectrics and resulting structures

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  2. Ferroelectrics: A pathway to switchable surface chemistry and catalysis

    Science.gov (United States)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab; Altman, Eric I.

    2016-08-01

    It has been known for more than six decades that ferroelectricity can affect a material's surface physics and chemistry thereby potentially enhancing its catalytic properties. Ferroelectrics are a class of materials with a switchable electrical polarization that can affect surface stoichiometry and electronic structure and thus adsorption energies and modes; e.g., molecular versus dissociative. Therefore, ferroelectrics may be utilized to achieve switchable surface chemistry whereby surface properties are not fixed but can be dynamically controlled by, for example, applying an external electric field or modulating the temperature. Several important examples of applications of ferroelectric and polar materials in photocatalysis and heterogeneous catalysis are discussed. In photocatalysis, the polarization direction can control band bending at water/ferroelectric and ferroelectric/semiconductor interfaces, thereby facilitating charge separation and transfer to the electrolyte and enhancing photocatalytic activity. For gas-surface interactions, available results suggest that using ferroelectrics to support catalytically active transition metals and oxides is another way to enhance catalytic activity. Finally, the possibility of incorporating ferroelectric switching into the catalytic cycle itself is described. In this scenario, a dynamic collaboration of two polarization states can be used to drive reactions that have been historically challenging to achieve on surfaces with fixed chemical properties (e.g., direct NOx decomposition and the selective partial oxidation of methane). These predictions show that dynamic modulation of the polarization can help overcome some of the fundamental limitations on catalytic activity imposed by the Sabatier principle.

  3. Guest–host interaction in ferroelectric liquid crystal–nanoparticle

    Indian Academy of Sciences (India)

    Ferroelectric Cu-doped ZnO (Cu–ZnO) nanoparticles have been added to the pure ferroelectric liquid crystal (FLC) Felix 17/100. The nanoparticles are bigger in size as compared to FLC molecules; therefore, they distort the existing geometry of FLC matrix and set up an antiparallel correlation with the dipole moments of the ...

  4. Functional Properties of Polydomain Ferroelectric Oxide Thin Films

    NARCIS (Netherlands)

    Houwman, Evert Pieter; Vergeer, Kurt; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Nishikawa, H.; Iwata, N.; Endo, T.; Takamura, Y.; Lee, G-H.; Mele, P.

    2017-01-01

    The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally, instead of the two-domain structure

  5. Temperature dependence of electronic transport property in ferroelectric polymer films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.L.; Wang, J.L., E-mail: jlwang@mail.sitp.ac.cn; Tian, B.B.; Liu, B.L.; Zou, Y.H.; Wang, X.D.; Sun, S.; Sun, J.L., E-mail: jlsun@mail.sitp.ac.cn; Meng, X.J.; Chu, J.H.

    2014-10-15

    Highlights: • The ferroelectric polymer was fabricated by Langmuir–Blodgett method. • The electrons as the dominant injected carrier were conformed in the ferroelectric polymer films. • The leakage current conduction mechanisms in ferroelectric polymer were investigated. - Abstract: The leakage current mechanism of ferroelectric copolymer of polyvinylidene fluoride with trifluoroethylene prepared by Langmuir–Blodgett was investigated in the temperature range from 100 K to 350 K. The electron as the dominant injected carrier was observed in the ferroelectric copolymer films. The transport mechanisms in copolymer strongly depend on the temperature and applied voltage. From 100 K to 200 K, Schottky emission dominates the conduction. With temperature increasing, the Frenkel–Poole emission instead of the Schottky emission to conduct the carrier transport. When the temperature gets to 260 K, the leakage current becomes independent of temperature, and the space charge limited current conduction was observed.

  6. An Automated Ab Initio Framework for Identifying New Ferroelectrics

    Science.gov (United States)

    Smidt, Tess; Reyes-Lillo, Sebastian E.; Jain, Anubhav; Neaton, Jeffrey B.

    Ferroelectric materials have a wide-range of technological applications including non-volatile RAM and optoelectronics. In this work, we present an automated first-principles search for ferroelectrics. We integrate density functional theory, crystal structure databases, symmetry tools, workflow software, and a custom analysis toolkit to build a library of known and proposed ferroelectrics. We screen thousands of candidates using symmetry relations between nonpolar and polar structure pairs. We use two search strategies 1) polar-nonpolar pairs with the same composition and 2) polar-nonpolar structure type pairs. Results are automatically parsed, stored in a database, and accessible via a web interface showing distortion animations and plots of polarization and total energy as a function of distortion. We benchmark our results against experimental data, present new ferroelectric candidates found through our search, and discuss future work on expanding this search methodology to other material classes such as anti-ferroelectrics and multiferroics.

  7. Excitations in a Two-Dimensional Random Antiferromagnet

    DEFF Research Database (Denmark)

    Birgeneau, R. J.; Walker, L. R.; Guggenheim, H. J.

    1975-01-01

    Inelastic neutron scattering studies of the magnetic excitations in the planar Heisenberg random antiferromagnet Rb2Mn0.5Ni0.5F4 at 7K are reported. Two well-defined bands of excitations are observed. A simple mean crystal model is found to predict accurately the measured dispersion relations using...

  8. Observation of Antiferromagnetic Resonance in an Organic Superconductor

    DEFF Research Database (Denmark)

    Torrance, J. B.; Pedersen, H. J.; Bechgaard, K.

    1982-01-01

    Anomalous microwave absorption has been observed in the organic superconductor TMTSF2AsF6 (TMTSF: tetramethyltetraselenafulvalene) below its metal-nonmetal transition near 12 K. This absorption is unambiguously identified as antiferromagnetic resonance by the excellent agreement between a spin...

  9. Static and dynamic behaviour of antiferromagnetic linear chains

    International Nuclear Information System (INIS)

    Henkens, L.S.J.M.

    1977-01-01

    This thesis deals with an experimental study of the static and dynamic behaviour of s=1/2 heisenberg antiferromagnetic linear chains in the temperature range of 0,05K 4 , CuSeO 4 .5H 2 O, and CuBeF 4 .5H 2 O, all of which are isomorphic salts

  10. Antiferromagnetic ground state in NpCoGe

    Czech Academy of Sciences Publication Activity Database

    Colineau, E.; Griveau, J.C.; Eloirdi, R.; Gaczyński, P.; Khmelevskyi, S.; Shick, Alexander; Caciuffo, R.

    2014-01-01

    Roč. 89, č. 11 (2014), "115135-1"-"115135-11" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP204/10/0330 Institutional support: RVO:68378271 Keywords : neptunium * anti-ferromagnetism * quantum critical phenomena Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  11. On the magnetism of Heisenberg double-layer antiferromagnets

    International Nuclear Information System (INIS)

    Uijen, C.M.J. van.

    1980-01-01

    The author investigates the sublattice magnetization and the susceptibility of the double-layer Heisenberg antiferromagnet K 3 M 2 F 7 by employing the techniques of elastic and quasi-elastic critical magnetic scattering of neutrons. (G.T.H.)

  12. 235U NMR study of the itinerant antiferromagnet USb2

    International Nuclear Information System (INIS)

    Kato, Harukazu; Sakai, Hironori; Ikushima, Kenji; Kambe, Shinsaku; Tokunaga, Yo; Aoki, Dai; Haga, Yoshinori; O-bar nuki, Yoshichika; Yasuoka, Hiroshi; Walstedt, Russell E.

    2005-01-01

    We have succeeded in resolving a 235 U antiferromagnetic nuclear magnetic resonance (AFNMR) signal using 235 U-enriched samples of USb 2 . The uranium hyperfine field and coupling constant estimated for this compound are consistent with those from other experiments. This is the first reported observation of 235 U NMR in conducting host material

  13. NdRhSn: A ferromagnet with an antiferromagnetic precursor

    Czech Academy of Sciences Publication Activity Database

    Mihalik, M.; Prokleška, J.; Kamarád, Jiří; Prokeš, K.; Isnard, O.; McIntyre, G. J.; Dönni, A.; Yoshii, S.; Kitazawa, H.; Sechovský, V.; de Boer, F.R.

    2011-01-01

    Roč. 83, č. 10 (2011), "104403-1"-"104403-10" ISSN 1098-0121 R&D Projects: GA ČR GA202/09/1027 Institutional research plan: CEZ:AV0Z10100521 Keywords : NdRhSn * ferromagnet * antiferromagnetic precursor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

  14. Dynamics of an inhomogeneous anisotropic antiferromagnetic spin chain

    International Nuclear Information System (INIS)

    Daniel, M.; Amuda, R.

    1994-11-01

    We investigate the nonlinear spin excitations in the two sublattice model of a one dimensional classical continuum Heisenberg inhomogeneous antiferromagnetic spin chain. The dynamics of the inhomogeneous chain reduces to that of its homogeneous counterpart when the inhomogeneity assumes a particular form. Apart from the usual twists and pulses, we obtain some planar configurations representing the nonlinear dynamics of spins. (author). 12 refs

  15. Ferro- and antiferro-magnetism in (Np, Pu)BC

    Czech Academy of Sciences Publication Activity Database

    Klimczuk, T.; Shick, Alexander; Kozub, Agnieszka L.; Griveau, J.C.; Colineau, E.; Falmbigl, M.; Wastin, F.; Rogl, P.

    2015-01-01

    Roč. 3, č. 4 (2015), "041803-1"-"041803-9" ISSN 2166-532X R&D Projects: GA ČR GA15-07172S Institutional support: RVO:68378271 Keywords : ferromagetism * antiferromagnetism * magnetic anisotropy * strong electron correlations * spin-orbit coupling Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.323, year: 2015

  16. Influence of cobalt doping on structural and magnetic properties of BiFeO3 nanoparticles

    Science.gov (United States)

    Khan, U.; Adeela, N.; Javed, K.; Riaz, S.; Ali, H.; Iqbal, M.; Han, X. F.; Naseem, S.

    2015-11-01

    Nanocrystalline cobalt-doped bismuth ferrites with general formula of BiFe1- δ Co δ O3 (0 ≤ δ ≤ 0.1) have been synthesized using solution evaporation method. Structure and phase identification was performed with X-ray diffraction (XRD) technique. The results confirm the formation of rhombohedral-distorted Perovskite structure with R3c symmetry. A decrease in lattice parameters and an increase in X-ray density have been observed with increasing cobalt concentration in BiFeO3. Particle size determined by transmission electron microscope was in good agreement with XRD, i.e., 39 nm. Room-temperature coercivity and saturation magnetization of nanoparticles were increased up to 7.5 % of cobalt doping. Low-temperature magnetic measurements of selected sample showed increasing behavior in saturation magnetization, coercivity, effective magnetic moments, and anisotropy constant. An increase in coercivity with decrease in temperature followed theoretical model of Kneller's law, while modified Bloch's model was employed for saturation magnetization in temperature range of 5-300 K.

  17. Calcination temperature influenced multiferroic properties of Ca-doped BiFeO3 nanoparticles

    International Nuclear Information System (INIS)

    Dhir, Gitanjali; Uniyal, Poonam; Verma, N. K.

    2015-01-01

    The influence of Ca-doping and particle size on structural, morphological and magnetic properties of BiFeO 3 nanoparticles has been studied. A sol-gel method was employed for the synthesis of nanoparticles and their particle size was tailored by varying the calcination temperature. Structural analysis revealed a rhombohedral distortion induced by Ca-substitution. The broadening of diffraction peaks with decreasing calcination temperature was indicative of reduction in crystallite size. The morphological analysis revealed the formation of agglomerated nanoparticles having average particle size ranging from 10-15 and 50-55 nm for C4 and C6, respectively. The agglomeration is attributed to high surface energy of nanoparticles. Ferromagnetism has been displayed by all the synthesized nanoparticles. Enhancement of saturation magnetization with Ca-substitution is attributed to suppression of spin cycloid structure by the reduction in size, lattice distortion and creation of oxygen vacancies by the substitution of divalent ion at trivalent site. Further, this value increases as a function of decreasing particle size. Strong particle size effects on magnetic properties of the synthesized nanoparticles are owed to increasing surface to volume ratio. All these observations are indicative of strong dependence of multiferroism on particle size

  18. Photo catalytic BiFeO3 Nano fibrous Mats for Effective Water Treatment

    International Nuclear Information System (INIS)

    Shaibani, P.M.; Prashanthi, K.; Sohrabi, A.; Thundat, Th.

    2013-01-01

    One-dimensional BiFeO 3 (BFO) nano fibers fabricated by electro spinning of a solution of Nylon 6 /BFO followed by calcination were used for photo catalytic degradation of contaminants in water. The BFO fibers were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-Vis spectroscopy. The SEM images of the as-spun samples demonstrated the successful production of nano fibers and the SEM images of the samples after calcination confirmed the integrity of the continuous BFO nano fibers. XRD analysis indicated the dominant presence of BFO phase throughout the calcinated nano fibers. Photo catalytic activity of the nano fibers and their application in water purification were investigated against 4-chloro phenol (4CP) as a model water contaminant. The results of the UV-Vis spectroscopy show the degradation of the 4CP by means of the photo catalytic activity of the BFO nano fibers. The kinetics of the photodegradation of 4CP is believed to be governed by a pseudo-first-order kinetics model.

  19. Spatially Resolved Large Magnetization in Ultrathin BiFeO3

    KAUST Repository

    Guo, Er-Jia

    2017-06-19

    Here, a quantitative magnetic depth profile across the planar interfaces in BiFeO3 /La0.7 Sr0.3 MnO3 (BFO/LSMO) superlattices using polarized neutron reflectometry is obtained. An enhanced magnetization of 1.83 ± 0.16 μB /Fe in BFO layers is observed when they are interleaved between two manganite layers. The enhanced magnetic order in BFO persists up to 200 K. The depth dependence of magnetic moments in BFO/LSMO superlattices as a function of the BFO layer thickness is also explored. The results show the enhanced net magnetic moment in BFO from the LSMO/BFO interface extends 3-4 unit cells into BFO. The interior part of a thicker BFO layer has a much smaller magnetization, suggesting it still keeps the small canted AFM state. The results exclude charge transfer, intermixing, epitaxial strain, and octahedral rotations/tilts as dominating mechanisms for the large net magnetization in BFO. An explanation-one suggested by others previously and consistent with the observations-attributes the temperature dependence of the net magnetization of BFO to strong orbital hybridization between Fe and Mn across the interfaces. Such orbital reconstruction would establish an upper temperature limit for magnetic ordering of BFO.

  20. Pyroelectric properties and electrical conductivity in samarium doped BiFeO 3 ceramics

    KAUST Repository

    Yao, Yingbang

    2012-06-01

    Samarium (Sm 3+) doped BiFeO 3 (BFO) ceramics were prepared by a modified solid-state-reaction method which adopted a rapid heating as well as cooling during the sintering process. The pyroelectric coefficient increased from 93 to 137 μC/m 2 K as the Sm 3+ doping level increased from 1 mol% to 8 mol%. Temperature dependence of the pyroelectric coefficient showed an abrupt decrease above 80 °C in all samples, which was associated with the increase of electrical conductivity with temperature. This electrical conduction was attributed to oxygen vacancy existing in the samples. An activation energy of ∼0.7 eV for the conduction process was found to be irrespective of the Sm 3+ doping level. On the other hand, the magnetic Néel temperature (T N) decreased with increasing Sm 3+ doping level. On the basis of our results, the effects of Sm doping level on the pyroelectric and electrical properties of the BFO were revealed. © 2011 Elsevier Ltd. All rights reserved.

  1. Origin of ferroelectricity and exotic magnetism in frustrated LiCuVO4

    Science.gov (United States)

    Mourigal, Martin

    2013-03-01

    The spin-1/2 Heisenberg chain with competing ferromagnetic nearest-neighbor (J1) and antiferromagnetic next-nearest neighbor (J2) interactions is probably one the simplest, yet richest model in frustrated magnetism. It is experimentally realized in a diversity of Mott insulators, in particular in copper-oxide materials built-up from edge-sharing CuO6 octahedra. The quasi-1D compound LiCuVO4 stands out for the diverse emergent magnetic and multiferroic phenomena it displays, its simple crystal structure and its availability as high-quality single crystals. I will review recent elastic neutron scattering works on LiCuVO4 which elucidate the nature of its ground-state as a function of applied electric field and magnetic field up to 14 T. Below 3.5 T, a model long-range ordered ferroelectric spin-cycloid is unveiled, its chirality fully controlled by an applied electric field, and the corresponding magnetoelectric coupling in excellent agreement with the predictions of a purely electronic mechanism based on spin currents. Above 8 T, a transition to a new quantum state is observed. This new phase resembles the longitudinal density-wave of magnon-pairs (p=2 SDW) predicted in the purely 1D case but is characterized by the intriguing absence of long-ranged dipolar correlations. Work performed at the Institut Laue-Langevin in Grenoble and in collaboration with M. Enderle, B. Fåk, R. K. Kremer and J. Law.

  2. Texture and anisotropy in ferroelectric lead metaniobate

    Science.gov (United States)

    Iverson, Benjamin John

    Ferroelectric lead metaniobate, PbNb2O6, is a piezoelectric ceramic typically used because of its elevated Curie temperature and anisotropic properties. However, the piezoelectric constant, d33, is relatively low in randomly oriented ceramics when compared to other ferroelectrics. Crystallographic texturing is often employed to increase the piezoelectric constant because the spontaneous polarization axes of grains are better aligned. In this research, crystallographic textures induced through tape casting are distinguished from textures induced through electrical poling. Texture is described using multiple quantitative approaches utilizing X-ray and neutron time-of-flight diffraction. Tape casting lead metaniobate with an inclusion of acicular template particles induces an orthotropic texture distribution. Templated grain growth from seed particles oriented during casting results in anisotropic grain structures. The degree of preferred orientation is directly linked to the shear behavior of the tape cast slurry. Increases in template concentration, slurry viscosity, and casting velocity lead to larger textures by inducing more particle orientation in the tape casting plane. The maximum 010 texture distributions were two and a half multiples of a random distribution. Ferroelectric texture was induced by electrical poling. Electric poling increases the volume of material oriented with the spontaneous polarization direction in the material. Samples with an initial paraelectric texture exhibit a greater change in the domain volume fraction during electrical poling than randomly oriented ceramics. In tape cast samples, the resulting piezoelectric response is proportional to the 010 texture present prior to poling. This results in property anisotropy dependent on initial texture. Piezoelectric properties measured on the most textured ceramics were similar to those obtained with a commercial standard.

  3. Structural and electronic parameters of ferroelectric KWOF

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Kesler, V. G.; Molokeev, M. S.; Aleksandrov, K. S.

    2010-11-01

    The low-temperature ferroelectric G2 polymorph of K 3WO 3F 3 oxyfluoride is formed by chemical synthesis. The electronic parameters of G2-K 3WO 3F 3 have been measured by X-ray photoelectron spectroscopy under excitation with Al Kα radiation (1486.6 eV). Detailed spectra have been recorded for all element core levels and Auger lines. The chemical bonding effects in the WO 3F 3 and WO 6 octahedrons are considered by using the binding energy difference ΔBE(O-W)=BE(O 1s)-BE(W 4f).

  4. The synthesis, structure and reactivity of iron-bismuth complexes : Potential Molecular Precursors for Multiferroic BiFeO3

    OpenAIRE

    Wójcik, Katarzyna

    2009-01-01

    The thesis presented here is focused on the synthesis of iron-bismuth alkoxides and siloxides as precursors for multiferroic BiFeO3 systems. Spectrum of novel cyclopentadienyl substituted iron-bismuth complexes of the general type [{Cpy(CO)2Fe}BiX2], as potential precursors for cyclopentadienyl iron-bismuth alkoxides or siloxides [{Cpy(CO)2Fe}Bi(OR)2] (R-OtBu, OSiMe2tBu), were obtained and characterised. The use of wide range of cyclopentadienyl rings in the iron carbonyl compounds allowed fo...

  5. Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

    International Nuclear Information System (INIS)

    Yakovlev, S.; Zekonyte, J.; Solterbeck, C.-H.; Es-Souni, M.

    2005-01-01

    Polycrystalline BiFeO 3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO 2 /Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode-film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film-electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms

  6. Transformable ferroelectric control of dynamic magnetic permeability

    Science.gov (United States)

    Jiang, Changjun; Jia, Chenglong; Wang, Fenglong; Zhou, Cai; Xue, Desheng

    2018-02-01

    Magnetic permeability, which measures the response of a material to an applied magnetic field, is crucial to the performance of magnetic devices and related technologies. Its dynamic value is usually a complex number with real and imaginary parts that describe, respectively, how much magnetic power can be stored and lost in the material. Control of permeability is therefore closely related to energy redistribution within a magnetic system or energy exchange between magnetic and other degrees of freedom via certain spin-dependent interactions. To avoid a high power consumption, direct manipulation of the permeability with an electric field through magnetoelectric coupling leads to high efficiency and simple operation, but remains a big challenge in both the fundamental physics and material science. Here we report unambiguous evidence of ferroelectric control of dynamic magnetic permeability in a Co /Pb (Mg1/3Nb2/3) 0.7Ti0.3O3 (Co/PMN-PT) heterostructure, in which the ferroelectric PMN-PT acts as an energy source for the ferromagnetic Co film via an interfacial linear magnetoelectric interaction. The electric field tuning of the magnitude and line shape of the permeability offers a highly localized means of controlling magnetization with ultralow power consumption. Additionally, the emergence of negative permeability promises a new way of realizing functional nanoscale metamaterials with adjustable refraction index.

  7. Elastic recoil detection analysis of ferroelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Stannard, W.B.; Johnston, P.N.; Walker, S.R.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Scott, J.F. [New South Wales Univ., Kensington, NSW (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1996-12-31

    There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the determination of separate energy spectra for individual elements or for small groups of elements In this work ERDA employing 77 MeV {sup 127}I ions has been used to analyse Strontium Bismuth Tantalate thin films at the heavy ion recoil facility at ANSTO, Lucas Heights. 9 refs., 5 figs.

  8. Elastic recoil detection analysis of ferroelectric films

    Energy Technology Data Exchange (ETDEWEB)

    Stannard, W B; Johnston, P N; Walker, S R; Bubb, I F [Royal Melbourne Inst. of Tech., VIC (Australia); Scott, J F [New South Wales Univ., Kensington, NSW (Australia); Cohen, D D; Dytlewski, N [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)

    1997-12-31

    There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the determination of separate energy spectra for individual elements or for small groups of elements In this work ERDA employing 77 MeV {sup 127}I ions has been used to analyse Strontium Bismuth Tantalate thin films at the heavy ion recoil facility at ANSTO, Lucas Heights. 9 refs., 5 figs.

  9. Mechanisms of aging and fatigue in ferroelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Genenko, Yuri A. [Sonderforschungsbereich 595, Institut für Materialwissenschaft, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany); Glaum, Julia [Department of Materials Science and Engineering, University of New South Wales, Sydney (Australia); Hoffmann, Michael J. [Institut für keramische Werkstoffe, Haid-und-Neu Str. 7, Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Albe, Karsten, E-mail: albe@mm.tu-darmstadt.de [Sonderforschungsbereich 595, Institut für Materialwissenschaft, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany)

    2015-02-15

    Highlights: • Experiments on aging and fatigue of bulk ferroelectrics are thoroughly reviewed. • Lead-based PZT and lead-free BNT–BT and KNN materials are covered. • Various fatigue regimes and factors are classified. • Defect associate formation and alignment are analyzed by density functional theory. • Emerging of internal bias field is studied within drift-diffusion approach. - Abstract: A comprehensive review of aging and fatigue phenomena in bulk polycrystalline ferroelectrics is presented. Three material classes are covered, namely the most widely used Pb[Zr{sub 1−x}Ti{sub x}]O{sub 3} (PZT) ceramics and lead-free materials, including those based on bismuth sodium titanate Bi{sub 1/2}Na{sub 1/2}TiO{sub 3} (BNT) and alkali niobate [K{sub x}Na{sub 1−x}]NbO{sub 3} (KNN). Aging is studied in poled and unpoled states both experimentally and theoretically. The variety of different loading regimes for fatigue includes DC electric field, unipolar, sesquipolar and bipolar cycling and all these differently combined with mechanical loading at different frequencies and temperatures. The role of device geometries and electrode materials is addressed and models describing charge migration and defect dipole re-orientation are discussed in the context of recent experimental studies.

  10. Mechanisms of aging and fatigue in ferroelectrics

    International Nuclear Information System (INIS)

    Genenko, Yuri A.; Glaum, Julia; Hoffmann, Michael J.; Albe, Karsten

    2015-01-01

    Highlights: • Experiments on aging and fatigue of bulk ferroelectrics are thoroughly reviewed. • Lead-based PZT and lead-free BNT–BT and KNN materials are covered. • Various fatigue regimes and factors are classified. • Defect associate formation and alignment are analyzed by density functional theory. • Emerging of internal bias field is studied within drift-diffusion approach. - Abstract: A comprehensive review of aging and fatigue phenomena in bulk polycrystalline ferroelectrics is presented. Three material classes are covered, namely the most widely used Pb[Zr 1−x Ti x ]O 3 (PZT) ceramics and lead-free materials, including those based on bismuth sodium titanate Bi 1/2 Na 1/2 TiO 3 (BNT) and alkali niobate [K x Na 1−x ]NbO 3 (KNN). Aging is studied in poled and unpoled states both experimentally and theoretically. The variety of different loading regimes for fatigue includes DC electric field, unipolar, sesquipolar and bipolar cycling and all these differently combined with mechanical loading at different frequencies and temperatures. The role of device geometries and electrode materials is addressed and models describing charge migration and defect dipole re-orientation are discussed in the context of recent experimental studies

  11. Ultrahigh piezoelectricity in ferroelectric ceramics by design

    Science.gov (United States)

    Li, Fei; Lin, Dabin; Chen, Zibin; Cheng, Zhenxiang; Wang, Jianli; Li, ChunChun; Xu, Zhuo; Huang, Qianwei; Liao, Xiaozhou; Chen, Long-Qing; Shrout, Thomas R.; Zhang, Shujun

    2018-03-01

    Piezoelectric materials, which respond mechanically to applied electric field and vice versa, are essential for electromechanical transducers. Previous theoretical analyses have shown that high piezoelectricity in perovskite oxides is associated with a flat thermodynamic energy landscape connecting two or more ferroelectric phases. Here, guided by phenomenological theories and phase-field simulations, we propose an alternative design strategy to commonly used morphotropic phase boundaries to further flatten the energy landscape, by judiciously introducing local structural heterogeneity to manipulate interfacial energies (that is, extra interaction energies, such as electrostatic and elastic energies associated with the interfaces). To validate this, we synthesize rare-earth-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), as rare-earth dopants tend to change the local structure of Pb-based perovskite ferroelectrics. We achieve ultrahigh piezoelectric coefficients d33 of up to 1,500 pC N-1 and dielectric permittivity ɛ33/ɛ0 above 13,000 in a Sm-doped PMN-PT ceramic with a Curie temperature of 89 °C. Our research provides a new paradigm for designing material properties through engineering local structural heterogeneity, expected to benefit a wide range of functional materials.

  12. Ferroelectric based catalysis: Switchable surface chemistry

    Science.gov (United States)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab

    2015-03-01

    We describe a new class of catalysts that uses an epitaxial monolayer of a transition metal oxide on a ferroelectric substrate. The ferroelectric polarization switches the surface chemistry between strongly adsorptive and strongly desorptive regimes, circumventing difficulties encountered on non-switchable catalytic surfaces where the Sabatier principle dictates a moderate surface-molecule interaction strength. This method is general and can, in principle, be applied to many reactions, and for each case the choice of the transition oxide monolayer can be optimized. Here, as a specific example, we show how simultaneous NOx direct decomposition (into N2 and O2) and CO oxidation can be achieved efficiently on CrO2 terminated PbTiO3, while circumventing oxygen (and sulfur) poisoning issues. One should note that NOx direct decomposition has been an open challenge in automotive emission control industry. Our method can expand the range of catalytically active elements to those which are not conventionally considered for catalysis and which are more economical, e.g., Cr (for NOx direct decomposition and CO oxidation) instead of canonical precious metal catalysts. Primary support from Toyota Motor Engineering and Manufacturing, North America, Inc.

  13. Nanopolar reorientation in ferroelectric thin films

    International Nuclear Information System (INIS)

    Hubert, C.; Levy, J.; Rivkin, T. V.; Carlson, C.; Parilla, P. A.; Perkins, J. D.; Ginley, D. S.

    2001-01-01

    The influence of varying oxygen pressure P(O 2 ) during the growth of Ba 0.4 Sr 0.6 TiO 3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O 2 ). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (P c =85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O 2 )=P c

  14. Ferroelectric properties of tungsten bronze morphotropic phase boundary systems

    International Nuclear Information System (INIS)

    Oliver, J.R.; Neurgaonkar, R.R.; Cross, L.E.; Pennsylvania State Univ., University Park, PA

    1989-01-01

    Tungsten bronze ferroelectrics which have a morphotropic phase boundary (MPB) can have a number or enhanced dielectric, piezoelectric, and electrooptic properties compared to more conventional ferroelectric materials. The structural and ferroelectric properties of several MPB bronze systems are presented, including data from sintered and hot-pressed ceramics, epitaxial thin films, and bulk single crystals. Included among these are three systems which had not been previously identified as morphotropic. The potential advantages and limitations of these MPB systems are discussed, along with considerations of the appropriate growth methods for their possible utilization in optical, piezoelectric, or pyroelectric device applications

  15. Structural, dielectric and ferroelectric characterization of PZT thin films

    Directory of Open Access Journals (Sweden)

    Araújo E.B.

    1999-01-01

    Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

  16. The lineshape of inelastic neutron scattering in the relaxor ferroelectrics

    International Nuclear Information System (INIS)

    Ivanov, M.A.; Kozlovski, M.; Piesiewicz, T.; Stephanovich, V.A.; Weron, A.; Wymyslowski, A.

    2005-01-01

    The possibilities of theoretical and experimental investigations of relaxor ferroelectrics by inelastic neutron scattering method are considered. The simple model to description of the peculiarities of inelastic neutron scattering lineshapes in ferroelectric relaxors is suggested. The essence of this model is to consider the interaction of the phonon subsystem of relaxor ferroelectrics with the ensemble of defects and impurities. The modification of the Latin Hypercube Sampling (LHS) method is presented. The optimization of planning of experiment by the modified LHS method is considered [ru

  17. Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

    Science.gov (United States)

    Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.

    2016-05-01

    BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ priced target.

  18. Study of magnetization and magnetoelectricity in CoFe2O4/BiFeO3 core-shell composites

    Science.gov (United States)

    Kuila, S.; Tiwary, Sweta; Sahoo, M. R.; Barik, A.; Babu, P. D.; Siruguri, V.; Birajdar, B.; Vishwakarma, P. N.

    2018-02-01

    CoFe2O4 (core)/BiFeO3 (shell) nanoparticles are prepared by varying the relative molar concentration of core and shell materials (40%CoFe2O4-60%BiFeO3, 50%CoFe2O4-50%BiFeO3, and 60%CoFe2O4-40%BiFeO3). The core-shell nature is confirmed from transmission electron microscopy on these samples. A plot of ΔM (=MFC-MZFC) vs temperature suggests the presence of two types of spin dynamics: (a) particle size dependent spin blocking and (b) spin-disorder. These two spin dynamic processes are found to contribute independently to the generation of magnetoelectric voltage. Very clear first order and second order magnetoelectric voltages are recorded. The resemblance of the first order magnetoelectric coefficient vs temperature plot to that of building up of order parameters in the mean field theory suggests that spin disorder can act like one of the essential ingredients in building the magnetoelectric coupling. The best result is obtained for the 50-50 composition sample, which may be due to better coupling of magnetostrictive CoFe2O4, and piezoelectric BiFeO3, because of the optimum thickness of shell and core.

  19. Antiferromagnetic exchange coupling measurements on single Co clusters

    Science.gov (United States)

    Wernsdorfer, W.; Leroy, D.; Portemont, C.; Brenac, A.; Morel, R.; Notin, L.; Mailly, D.

    2009-03-01

    We report on single-cluster measurements of the angular dependence of the low-temperature ferromagnetic core magnetization switching field in exchange-coupled Co/CoO core-shell clusters (4 nm) using a micro-bridge DC superconducting quantum interference device (μ-SQUID). It is observed that the coupling with the antiferromagnetic shell induces modification in the switching field for clusters with intrinsic uniaxial anisotropy depending on the direction of the magnetic field applied during the cooling. Using a modified Stoner-Wohlfarth model, it is shown that the core interacts with two weakly coupled and asymmetrical antiferromagnetic sublattices. Ref.: C. Portemont, R. Morel, W. Wernsdorfer, D. Mailly, A. Brenac, and L. Notin, Phys. Rev. B 78, 144415 (2008)

  20. Soft modes in the easy plane pyrochlore antiferromagnet

    International Nuclear Information System (INIS)

    Champion, J D M; Holdsworth, P C W

    2004-01-01

    Thermal fluctuations lift the high ground state degeneracy of the classical nearest neighbour pyrochlore antiferromagnet, with easy plane anisotropy, giving a first-order phase transition to a long range ordered state. We show, from spin wave analysis and numerical simulation, that even below this transition a continuous manifold of states, of dimension N 2/3 , exist (N is the number of degrees of freedom). As the temperature goes to zero a further 'order by disorder' selection is made from this manifold. The pyrochlore antiferromagnet Er 2 Ti 2 O 7 is believed to have an easy plane anisotropy and is reported to have the same magnetic structure. This is perhaps surprising, given that the dipole interaction lifts the degeneracy of the classical model in favour of a different structure. We interpret our results in the light of these facts

  1. Magnetoelectric effect in (BiFeO3x–(BaTiO31-x solid solutions

    Directory of Open Access Journals (Sweden)

    Kowal Karol

    2015-03-01

    Full Text Available The aim of the present work was to study magnetoelectric effect (ME in (BiFeO3x-(BaTiO31-x solid solutions in terms of technological conditions applied in the samples fabrication process. The rapidly growing interest in these materials is caused by their multiferroic behaviour, i.e. coexistence of both electric and magnetic ordering. It creates possibility for many innovative applications, e.g. in steering the magnetic memory by electric field and vice versa. The investigated samples of various chemical compositions (i.e. x = 0.7, 0.8 and 0.9 were prepared by the solid-state sintering method under three sets of technological conditions differing in the applied temperature and soaking time. Measurements of the magnetoelectric voltage coefficient αME were performed using a dynamic lock-in technique. The highest value of αME was observed for 0.7BiFeO3-0.3BaTiO3 solid solution sintered at the highest temperature (T = 1153 K after initial electrical poling despite that the soaking time was reduced 10 times in this case.

  2. Effects of (La, Sr) co-doping on electrical conduction and magnetic properties of BiFeO3 nanoparticles

    International Nuclear Information System (INIS)

    Liu Li; Wang Shouyu; Yin Zi; Zhang Chuang; Li Xiu; Yang Jiabin; Liu Weifang; Xu Xunling

    2016-01-01

    Multiferroic material as a photovoltaic material has gained considerable attention in recent years. Nanoparticles (NPs) La 0.1 Bi 0.9−x Sr x FeO y (LBSF, x = 0, 0.2, 0.4) with dopant Sr 2+ ions were synthesized by the sol–gel method. A systematic change in the crystal structure from rhombohedral to tetragonal upon increasing Sr doping was observed. There is an obvious change in the particle size from 180 nm to 50 nm with increasing Sr substitution into LBFO. It was found that Sr doping effectively narrows the band gap from ∼ 2.08 eV to ∼ 1.94 eV, while it leads to an apparent enhancement in the electrical conductivity of LBSF NPs, making a transition from insulator to semiconductor. This suggests an effective way to modulate the conductivity of BiFeO 3 -based multiferroic materials with pure phase by co-doping with La and Sr at the A sites of BiFeO 3 . (paper)

  3. Phase pure synthesis of BiFeO3 nanopowders using diverse precursor via co-precipitation method

    International Nuclear Information System (INIS)

    Shami, M. Yasin; Awan, M.S.; Anis-ur-Rehman, M.

    2011-01-01

    Highlights: → Synthesized phase pure BiFeO 3 using diverse precursor by co-precipitation method. → Optimized synthesis and processing parameters. → Thermal behavior, structure and microstructure were analyzed. → Resistivity vs temperature and dielectric constant vs frequency were measured. → Multiferroicity at room temperature was confirmed by M-H and P-E loops. - Abstract: Amorphous powder of BiFeO 3 (BFO) was synthesized at low-temperature (80 deg. C) by co-precipitation method. Optimal synthesis conditions for phase pure BFO were obtained. Powders were calcined in the temperature range from 400 to 600 deg. C for 1 h. Iso-statically pressed powder was sintered at 500 deg. C for 2 h. Differential scanning calorimetric thermo-gram guided for phase transition, crystallization and melting temperatures. X-ray diffraction confirmed the amorphous nature of as synthesized powder and phase formation of calcined powders. Calcination at temperature ≥400 deg. C resulted in nano crystalline powders with perovskite structure. Average crystallite size increased with the increase in calcination temperature. Scanning electron microscopic studies revealed dense granular microstructure of the sintered samples. The sintered samples exhibited high dc resistivity at room temperature which decreased with the increase in temperature. Dielectric constant, dielectric loss tangent and ac conductivity measurements were carried out in the frequency range (10 Hz to 2 MHz). The samples responded weak electric and magnetic polarization at room temperature with unsaturated and hysteresis free loops, respectively.

  4. Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates

    International Nuclear Information System (INIS)

    Chen Xinman; Zhang Hu; Ruan Kaibin; Shi Wangzhou

    2012-01-01

    Highlights: ► Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films with Pt/BiFeO 3 /LNO was reported. ► Rectification property was explained from the asymmetrical contact between top and bottom interfaces and the distinct oxygen vacancy density. ► The modification of Schottky-like barrier was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices. - Abstract: We reported the annealing effect on the electrical behaviors of BiFeO 3 thin films integrated on LaNiO 3 (LNO) layers buffered Si substrates by sol–gel spin-coating technique. All the BiFeO 3 thin films exhibit the reversible bipolar resistive switching behaviors with Pt/BiFeO 3 /LNO configuration. The electrical conduction mechanism of the devices was dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. Good diode-like rectification property was observed in device with BiFeO 3 film annealed at 500 °C, but vanished in device with BiFeO 3 film annealed at 600 °C. This was attributed to the asymmetrical contact between top and bottom interfaces as well as the distinct oxygen vacancy density verified by XPS. Furthermore, the modification of Schottky-like barrier due to the drift of oxygen vacancies was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices.

  5. Antiferromagnetic ordering of Er2NiSi3 compound

    International Nuclear Information System (INIS)

    Pakhira, Santanu; Mazumdar, Chandan; Ranganathan, R.

    2014-01-01

    Ternary intermetallics of the stoichiometric composition R 2 TX 3 , where, R = rare earth element, T = d-electron transition metal and X= p-electron element, crystallizes in hexagonal A1B 2 type crystal structure with space group P6/mmm. We report here the synthesis and basic magnetic properties of the compound Er 2 NiSi 3 . Paramagnetic to antiferromagnetic phase change occurs below 5.4 K for this compound. (author)

  6. Magnetization behavior of nanocrystalline systems combining ferromagnetic and antiferromagnetic phases

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, J.; Wagner, W.; Svygenhoven, H. van [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Meier, J.; Doudin, B.; Ansermet, J.P. [Ecole Polytechnique Federale, Lausanne (Switzerland)

    1997-09-01

    The magnetic properties of nanostructured materials on the basis of Fe and Ni have been investigated with a SQUID magnetometer, complementary to the small-angle neutron scattering study reported in the same volume. Measurements of the coercive field in a temperature range from 5 to 300 K confirm the validity of the random anisotropy model for our nanostructured systems. Furthermore, we obtain information about the presence and distribution of the antiferromagnetic oxides, joining the ferromagnetic grains. (author) 2 figs., 3 refs.

  7. Spintronic materials and devices based on antiferromagnetic metals

    OpenAIRE

    Wang, Y.Y.; Song, C.; Zhang, J.Y.; Pan, F.

    2017-01-01

    In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring i...

  8. Highly tunable perpendicularly magnetized synthetic antiferromagnets for biotechnology applications

    OpenAIRE

    Vemulkar, T; Mansell, Rhodri; Petit, Dorothee Celine; Cowburn, Russell Paul; Lesniak, MS

    2015-01-01

    Magnetic micro and nanoparticles are increasingly used in biotechnological applications due to the ability to control their behavior through an externally applied field. We demonstrate the fabrication of particles made from ultrathin perpendicularly magnetized CoFeB/Pt layers with antiferromagnetic interlayer coupling. The particles are characterized by zero moment at remanence, low susceptibility at low fields, and a large saturated moment created by the stacking of the basic coupled bilayer...

  9. Magnetization behavior of nanocrystalline systems combining ferromagnetic and antiferromagnetic phases

    International Nuclear Information System (INIS)

    Loeffler, J.; Wagner, W.; Svygenhoven, H. van; Meier, J.; Doudin, B.; Ansermet, J.P.

    1997-01-01

    The magnetic properties of nanostructured materials on the basis of Fe and Ni have been investigated with a SQUID magnetometer, complementary to the small-angle neutron scattering study reported in the same volume. Measurements of the coercive field in a temperature range from 5 to 300 K confirm the validity of the random anisotropy model for our nanostructured systems. Furthermore, we obtain information about the presence and distribution of the antiferromagnetic oxides, joining the ferromagnetic grains. (author) 2 figs., 3 refs

  10. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  11. High-field spin dynamics of antiferromagnetic quantum spin chains

    DEFF Research Database (Denmark)

    Enderle, M.; Regnault, L.P.; Broholm, C.

    2000-01-01

    present recent work on the high-field spin dynamics of the S = I antiferromagnetic Heisenberg chains NENP (Haldane ground state) and CsNiCl3 (quasi-1D HAF close to the quantum critical point), the uniform S = 1/2 chain CTS, and the spin-Peierls system CuGeO3. (C) 2000 Elsevier Science B,V. All rights...

  12. Fractional excitations in the square-lattice quantum antiferromagnet

    DEFF Research Database (Denmark)

    Piazza, B. Dalla; Mourigal, M.; Christensen, Niels Bech

    2015-01-01

    -projected trial wavefunctions. The excitation continuum is accounted for by the existence of spatially extended pairs of fractional S=1/2 quasiparticles, 2D analogues of 1D spinons. Away from the anomalous wavevector, these fractional excitations are bound and form conventional magnons. Our results establish...... the existence of fractional quasiparticles in the high-energy spectrum of a quasi-two-dimensional antiferromagnet, even in the absence of frustration....

  13. Long range anti-ferromagnetic spin model for prebiotic evolution

    International Nuclear Information System (INIS)

    Nokura, Kazuo

    2003-01-01

    I propose and discuss a fitness function for one-dimensional binary monomer sequences of macromolecules for prebiotic evolution. The fitness function is defined by the free energy of polymers in the high temperature random coil phase. With repulsive interactions among the same kind of monomers, the free energy in the high temperature limit becomes the energy function of the one-dimensional long range anti-ferromagnetic spin model, which is shown to have a dynamical phase transition and glassy states

  14. Superconductivity and antiferromagnetism in heavy-electron systems

    International Nuclear Information System (INIS)

    Konno, R.; Ueda, K.

    1989-01-01

    Superconductivity and antiferromagnetism in heavy-electron systems are investigated from a general point of view. First we classify superconducting states in a simple cubic lattice, a body-centered tetragonal lattice, and a hexagonal close-packed lattice, having URu 2 Si 2 and UPt 3 in mind. For that purpose we take an approach to treat the effective couplings in real space. The approach is convenient to discuss the relation between the nature of fluctuations in the system and the superconducting states. When we assume that the antiferromagnetic fluctuations reported by neutron experiments are dominant, the most promising are some of the anisotropic singlet states and there remains the possibility for some triplet states too. Then we discuss the coupling between the two order parameters based on a Ginzburg-Landau theory. We derive a general expression of the coupling term. It is pointed out that the coupling constant can be large in heavy-electron systems. The general trend of the coexistence of the superconductivity and antiferromagnetism is discussed, and it is shown that the anisotropic states are generally more favorable to the coexistence than the conventional isotropic singlet. Experimental data of URu 2 Si 2 and UPt 3 are analyzed by the Ginzburg-Landau theory. According to the analysis URu 2 Si 2 has a small coupling constant and a large condensation energy of the antiferromagnetism. On the other hand, UPt 3 has a large coupling constant and a small condensation energy. It means that the specific-heat anomaly at T N should be small in UPt 3 and its superconductivity is easily destroyed when a large moment is formed

  15. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

    Czech Academy of Sciences Publication Activity Database

    Galceran, R.; Fina, I.; Cisneros-Fernandez, J.; Bozzo, B.; Frontera, C.; Lopez-Mir, L.; Deniz, H.; Park, K.W.; Park, B.G.; Balcells, J.; Martí, Xavier; Jungwirth, Tomáš; Martínez, B.

    2016-01-01

    Roč. 6, Oct (2016), 1-6, č. článku 35471. ISSN 2045-2322 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : antiferromagnets * spintronics * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.259, year: 2016

  16. Antiferromagnetism in reduced YBa2Cu3O6+x

    International Nuclear Information System (INIS)

    Casalta, H.; Schleger, P.; Montfrooij, W.; Andersen, N.H.; Lebech, B.; Liang Ruixing; Hardy, W.N.

    1995-01-01

    Magnetic ordering was investigated by neutron scattering in an YBa 2 Cu 3 O 6+x single crystal. We observed antiferromagnetic ordering (AFI) (T N =410 K for x=0.1 and T N =368 K for x=0.18), but found no evidence for a reordering down to 2 K (AFII). The magnetic structure factors are presented to emphasize the anisotropic character of the form factor. ((orig.))

  17. Interface states in stressed semiconductor heterojunction with antiferromagnetic ordering

    International Nuclear Information System (INIS)

    Kantser, V.G.

    1995-08-01

    The stressed heterojunctions with antiferromagnetic ordering in which the constituents have opposite band edge symmetry and their gaps have opposite signs have been investigated. The interface states have been shown to appear in these heterojunctions and they are spin-split. As a result if the Fermi level gets into one of the interface bands then it leads to magnetic ordering in the interface plane. That is if the interface magnetization effect can be observed. (author). 14 refs, 2 figs

  18. Spintronics with multiferroics

    Science.gov (United States)

    Béa, H.; Gajek, M.; Bibes, M.; Barthélémy, A.

    2008-10-01

    In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO3 allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

  19. Spintronics with multiferroics

    International Nuclear Information System (INIS)

    Bea, H; Gajek, M; Bibes, M; Barthelemy, A

    2008-01-01

    In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO 3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO 3 allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO 3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO 3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO 3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO 3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

  20. On bistable states retention in ferroelectric Langmuir-Blodgett films

    Science.gov (United States)

    Geivandov, A. R.; Palto, S. P.; Yudin, S. G.; Fridkin, V. M.; Blinov, L. M.; Ducharme, S.

    2003-08-01

    A new insight into the nature of ferroelectricity is emerging from the study of ultra-thin ferroelectric films prepared of poly(vinylidene fluoride with trifluoroethylene) copolymer using Langmuir-Blodgett (LB) technique. Unique properties of these films indicate the existence of two-dimensional ferroelectricity. The retention of two polarized states in ferroelectric polymer LB films is studied using nonlinear dielectric spectroscopy. The technique is based on phase sensitive measurements of nonlinear dielectric spectroscopy. The amplitude of the current response at the 2nd harmonic of the applied voltage is proportional to the magnitude of the remnant polarization, while its phase gives the sign. We have found that 10 - 20 mm thick LB films can show fast switching time and long retention of the two polarized states. Nevertheless, LB films show a pronounced asymmetry in switching to the opposite states. Possible mechanisms of such behavior are discussed.

  1. Ferroelectric relaxor Ba(TiCe)O3

    International Nuclear Information System (INIS)

    Chen Ang; Zhi Jing; Yu Zhi

    2002-01-01

    The dielectric behaviour of Ba(Ti 1-y Ce y )O 3 solid solutions (y=0-0.3) has been studied. A small amount of Ce doping (y=0.02) has weak influence on the dielectric behaviour of Ba(Ti 1-y Ce y )O 3 . With increasing Ce concentration, three phase transitions of pure BaTiO 3 are pinched into one rounded dielectric peak with frequency dispersion, and the relaxation time follows the Vogel-Fulcher relation. The evolution from a normal ferroelectric to a ferroelectric relaxor is emphasized. High strains (S=∼0.1-0.19%) with a small hysteresis under ac fields are obtained in ferroelectric relaxors Ba(Ti 1-y Ce y )O 3 . The physical mechanism of the relaxation process, the pinching effect of the phase transitions and their influence on the ferroelectric and electrostrictive behaviour are discussed. (author)

  2. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

    2017-05-03

    This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

  3. Fast Ferroelectric L-Band Tuner for ILC Cavities

    Energy Technology Data Exchange (ETDEWEB)

    Hirshfield, Jay L

    2010-03-15

    Design, analysis, and low-power tests are described on a 1.3 GHz ferroelectric tuner that could find application in the International Linear Collider or in Project X at Fermi National Accelerator Laboratory. The tuner configuration utilizes a three-deck sandwich imbedded in a WR-650 waveguide, in which ferroelectric bars are clamped between conducting plates that allow the tuning bias voltage to be applied. Use of a reduced one-third structure allowed tests of critical parameters of the configuration, including phase shift, loss, and switching speed. Issues that were revealed that require improvement include reducing loss tangent in the ferroelectric material, development of a reliable means of brazing ferroelectric elements to copper parts of the tuner, and simplification of the mechanical design of the configuration.

  4. Hybrid dual gate ferroelectric memory for multilevel information storage

    KAUST Repository

    Khan, Yasser

    2015-01-01

    Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

  5. Field-effect transistor memories based on ferroelectric polymers

    Science.gov (United States)

    Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

    2017-11-01

    Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

  6. A prediction of rate-dependent behaviour in ferroelectric polycrystals

    International Nuclear Information System (INIS)

    Kim, Sang-Joo

    2007-01-01

    Rate-dependent behaviour of a polycrystalline ferroelectric material is predicted based on thermal activation theory and a representative volume element model. First, the behaviour of a ferroelectric single crystal is calculated from a recently proposed three-dimensional free energy model [S.J. Kim, S. Seelecke, Int. J. Solids Struct. 44 (2007) 1196-1209]. Then, from the calculated single crystal responses, poling behaviour of a ferroelectric polycrystal is obtained in three different ways, two representative volume element models and Gaussian integration method. It is found that a dodecahedron representative volume element consisting of 210 crystallites is the best choice among the three methods. Finally, the behaviour of a ferroelectric polycrystal under various electric and stress loads is calculated using the chosen RVE model. The calculated responses are compared qualitatively with experimental observations, and the effects of crystal orientation and polycrystallinity are discussed

  7. Spin Wave Theory in Two-Dimensional Coupled Antiferromagnets

    Science.gov (United States)

    Shimahara, Hiroshi

    2018-04-01

    We apply spin wave theory to two-dimensional coupled antiferromagnets. In particular, we primarily examine a system that consists of small spins coupled by a strong exchange interaction J1, large spins coupled by a weak exchange interaction J2, and an anisotropic exchange interaction J12 between the small and large spins. This system is an effective model of the organic antiferromagnet λ-(BETS)2FeCl4 in its insulating phase, in which intriguing magnetic phenomena have been observed, where the small and large spins correspond to π electrons and 3d spins, respectively. BETS stands for bis(ethylenedithio)tetraselenafulvalene. We obtain the antiferromagnetic transition temperature TN and the sublattice magnetizations m(T) and M(T) of the small and large spins, respectively, as functions of the temperature T. When T increases, m(T) is constant with a slight decrease below TN, even where M(T) decreases significantly. When J1 ≫ J12 and J2 = 0, an analytical expression for TN is derived. The estimated value of TN and the behaviors of m(T) and M(T) agree with the observations of λ-(BETS)2FeCl4.

  8. Magnetic Transport in Spin Antiferromagnets for Spintronics Applications

    Directory of Open Access Journals (Sweden)

    Mohamed Azzouz

    2017-10-01

    Full Text Available Had magnetic monopoles been ubiquitous as electrons are, we would probably have had a different form of matter, and power plants based on currents of these magnetic charges would have been a familiar scene of modern technology. Magnetic dipoles do exist, however, and in principle one could wonder if we can use them to generate magnetic currents. In the present work, we address the issue of generating magnetic currents and magnetic thermal currents in electrically-insulating low-dimensional Heisenberg antiferromagnets by invoking the (broken electricity-magnetism duality symmetry. The ground state of these materials is a spin-liquid state that can be described well via the Jordan–Wigner fermions, which permit an easy definition of the magnetic particle and thermal currents. The magnetic and magnetic thermal conductivities are calculated in the present work using the bond–mean field theory. The spin-liquid states in these antiferromagnets are either gapless or gapped liquids of spinless fermions whose flow defines a current just as the one defined for electrons in a Fermi liquid. The driving force for the magnetic current is a magnetic field with a gradient along the magnetic conductor. We predict the generation of a magneto-motive force and realization of magnetic circuits using low-dimensional Heisenberg antiferromagnets. The present work is also about claiming that what the experiments in spintronics attempt to do is trying to treat the magnetic degrees of freedoms on the same footing as the electronic ones.

  9. Differential geometric aspects of the theory of ferroelectricity

    International Nuclear Information System (INIS)

    Khosiainov, V.T.

    1988-11-01

    In connection with the problem of the ferroelectricity a differential formalism is developed as a tool to describe the fine electronic properties in solids. This includes the gauge invariant definition of the differentiation in k-space (position operator), the notion of holonomy group and characteristic gauge field in k-space of electron states. A variational principle and possible solutions of resulting field equations are discussed. A criterion for the appearance of the ferroelectricity is proposed. (author). 5 refs

  10. Effects of Bi doping on dielectric and ferroelectric properties

    Indian Academy of Sciences (India)

    [Pb0.95(La1−Bi)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of ...

  11. Improper ferroelectrics as high-efficiency energy conversion materials

    Energy Technology Data Exchange (ETDEWEB)

    Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki [Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

    2017-05-15

    An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O{sub 3} and BaTiO{sub 3}, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca{sub 0.84}Sr{sub 0.16}){sub 8}[AlO{sub 2}]{sub 12}(MoO{sub 4}){sub 2} (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

    Science.gov (United States)

    Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

    2018-04-01

    In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

  13. Second harmonic generation in generalized Thue-Morse ferroelectric superlattices

    International Nuclear Information System (INIS)

    Wang Longxiang; Yang Xiangbo; Chen Tongsheng

    2009-01-01

    In this paper the second harmonic generation (SHG) in generalized Thue-Morse (GTM(m, n)) ferroelectric superlattices is studied. Under the small-signal approximation, the SHG spectra in both real and reciprocal spaces are investigated. It is found that: (1) only when the structure parameters l, l A , and l B are all chosen to be proper, can SHG in GTM(m, n) ferroelectric superlattices be generated; (2) for Family A of generalized Thue-Morse, GTM(m, 1) ferroelectric systems, with the increase of parameter m, the intense peaks of SHG concentrate on the long wavelength 1.4-1.5μm (the fundamental beam (FB) wavelength is within 0.8-1.5μm), but for Family B of generalized Thue-Morse, GTM(1, n) ferroelectric superlattices, with the increase of parameter n, the intense peaks of SHG concentrate on the middle wavelength 1.1-1.2μm; and (3) for GTM(m, 1) ferroelectric superlattices, the bigger the m, the stronger the relative integral intensity (RII) of SHG would be, but for GTM(1, n) ferroelectric systems, the bigger the n, the weaker the RII of SHG would be.

  14. Improper ferroelectrics as high-efficiency energy conversion materials

    International Nuclear Information System (INIS)

    Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki

    2017-01-01

    An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O_3 and BaTiO_3, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca_0_._8_4Sr_0_._1_6)_8[AlO_2]_1_2(MoO_4)_2 (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

    Science.gov (United States)

    Yusuf, Mohammed; Du, Xu; Dawber, Matthew

    2013-03-01

    Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

  16. Modelling of creep hysteresis in ferroelectrics

    Science.gov (United States)

    He, Xuan; Wang, Dan; Wang, Linxiang; Melnik, Roderick

    2018-05-01

    In the current paper, a macroscopic model is proposed to simulate the hysteretic dynamics of ferroelectric ceramics with creep phenomenon incorporated. The creep phenomenon in the hysteretic dynamics is attributed to the rate-dependent characteristic of the polarisation switching processes induced in the materials. A non-convex Helmholtz free energy based on Landau theory is proposed to model the switching dynamics. The governing equation of single-crystal model is formulated by applying the Euler-Lagrange equation. The polycrystalline model is obtained by combining the single crystal dynamics with a density function which is constructed to model the weighted contributions of different grains with different principle axis orientations. In addition, numerical simulations of hysteretic dynamics with creep phenomenon are presented. Comparison of the numerical results and their experimental counterparts is also presented. It is shown that the creep phenomenon is captured precisely, validating the capability of the proposed model in a range of its potential applications.

  17. Efficient photoemission from robust ferroelectric ceramics

    International Nuclear Information System (INIS)

    Boscolo, I.; Castellano, M.; Catani, L.; Ferrario, M.; Tazzioli, F.; Giannessi, L.

    1999-01-01

    Experimental results on photoemission by ferroelectric ceramic disks, with a possible interpretation, are present. Two types of lead zirconate titanate lanthanum doped, PLZT, ceramics have been used for tests. 25 ps light pulses of 532 and 355 nm were used for excitation. The intensity ranged within the interval 0.1-3 GW/cm 2. The upper limit of the intensity was established by the damage threshold tested by the onset of ion emission. At low value of the intensity the yield was comparable at the two wavelengths. At the highest intensity of green light the emitted charge was 1 nC per 10 mm 2, but it was limited by the space charge effect. In fact, the applied field was only 20 kV/cm, allowed both by the mechanical design of the apparatus and the poor vacuum, 10 - 4 mbar. No surface processing was required. The measurement of the electron pulse length under way

  18. Lithium niobate. Defects, photorefraction and ferroelectric switching

    Energy Technology Data Exchange (ETDEWEB)

    Volk, Tatyana [Russian Academy of Sciences, Inst. for Crystallography, Moscow (Russian Federation); Woehlecke, Manfred [Osnabrueck Univ. (Germany). Fachbereich Physik

    2008-07-01

    The book presents the current state of studies of point defects, both intrinsic and extrinsic (impurities, radiation centers, etc.), in LiNbO{sub 3}. The contribution of intrinsic defects to photoinduced charge transport, i.e. to the photorefraction, is explained. The photorefractive and optical properties of LiNbO{sub 3} crystals with different stoichiometry and of those doped with so-called ''optical-damage resistant'' impurities controlling the intrinsic defect structure are described in detail. Applications included are to the problem of non-erasable recording of photorefractive holograms in LiNbO{sub 3} and the current situation of studies in the ferroelectric switching and domain structure of LiNbO{sub 3}, as well as the creation of periodically-poled structures for the optical frequency conversion. (orig.)

  19. Radiation evaluation of commercial ferroelectric nonvolatile memories

    International Nuclear Information System (INIS)

    Benedetto, J.M.; DeLancey, W.M.; Oldham, T.R.; McGarrity, J.M.; Tipton, C.W.; Brassington, M.; Fisch, D.E.

    1991-01-01

    This paper reports on ferroelectric (FE) on complementary metal-oxide semiconductor (CMOS) 4-kbit nonvolatile memories, 8-bit octal latches (with and without FE), and process control test chips that were used to establish a baseline characterization of the radiation response of CMOS/FE integrated devices and to determine whether the additional FE processing caused significant degradation to the baseline CMOS process. Functional failure of all 4-kbit memories and octal latches occurred at total doses of between 2 and 4 krad(Si), most likely due to field- oxide effects in the underlying CMOS. No significant difference was observed between the radiation responses of devices with and without the FE film in this commercial process

  20. Reversible Polarization Rotation in Epitaxial Ferroelectric Bilayers

    DEFF Research Database (Denmark)

    Liu, Guangqing; Zhang, Qi; Huang, Hsin-Hui

    2016-01-01

    Polarization rotation engineering is a promising path to giant dielectric and electromechanical responses in ferroelectric materials and devices. This work demonstrates robust and reversible in- to out-of-plane polarization rotation in ultrathin (nanoscale) epitaxial (001) tetragonal PbZr0.3Ti0.7O3...... large-scale polarization rotation switching (≈60 μC cm−2) and an effective d 33 response 500% (≈250 pm V−1) larger than the PZT-R layer alone. Furthermore, this enhancement is stable for more than 107 electrical switching cycles. These bilayers present a simple and highly controllable means to design...... and optimize rotational polar systems as an alternate to traditional composition-based approaches. The precise control of the subtle interface-driven interactions between the lattice and the external factors that control polarization opens a new door to enhanced—or completely new—functional properties....

  1. Metallic magnets without inversion symmetry and antiferromagnetic quantum critical points

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, I.A.

    2006-07-01

    This thesis focusses on two classes of systems that exhibit non-Fermi liquid behaviour in experiments: we investigated aspects of chiral ferromagnets and of antiferromagnetic metals close to a quantum critical point. In chiral ferromagnets, the absence of inversion symmetry makes spin-orbit coupling possible, which leads to a helical modulation of the ferromagnetically ordered state. We studied the motion of electrons in the magnetically ordered state of a metal without inversion symmetry by calculating their generic band-structure. We found that spin-orbit coupling, although weak, has a profound effect on the shape of the Fermi surface: On a large portion of the Fermi surface the electron motion parallel to the helix practically stops. Signatures of this effect can be expected to show up in measurements of the anomalous Hall effect. Recent neutron scattering experiments uncovered the existence of a peculiar kind of partial order in a region of the phase diagram adjacent to the ordered state of the chiral ferromagnet MnSi. Starting from the premise that this partially ordered state is a thermodynamically distinct phase, we investigated an extended Ginzburg-Landau theory for chiral ferromagnets. In a certain parameter regime of the Ginzburg-Landau theory we identified crystalline phases that are reminiscent of the so-called blue phases in liquid crystals. Many antiferromagnetic heavy-fermion systems can be tuned into a regime where they exhibit non-Fermi liquid exponents in the temperature dependence of thermodynamic quantities such as the specific heat capacity; this behaviour could be due to a quantum critical point. If the quantum critical behaviour is field-induced, the external field does not only suppress antiferromagnetism but also induces spin precession and thereby influences the dynamics of the order parameter. We investigated the quantum critical behavior of clean antiferromagnetic metals subject to a static, spatially uniform external magnetic field. We

  2. Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

    Science.gov (United States)

    Haridasan, Vrinda

    Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband

  3. High-accuracy determination for optical indicatrix rotation in ferroelectric DTGS

    OpenAIRE

    O.S.Kushnir; O.A.Bevz; O.G.Vlokh

    2000-01-01

    Optical indicatrix rotation in deuterated ferroelectric triglycine sulphate is studied with the high-accuracy null-polarimetric technique. The behaviour of the effect in ferroelectric phase is referred to quadratic spontaneous electrooptics.

  4. Single crystal magnetic, dielectric and thermal studies of the relaxor ferroelectric Pb(Fe2/3W1/3)O3

    International Nuclear Information System (INIS)

    Ye, Z.G.; Sato, M.; Kita, E.; Bursill, L.A.; Schmid, H.

    1998-01-01

    The magnetic, dielectric and thermal properties of the complex perovskite Pb(Fe 2/3 W 1/3 )O 3 [PFW] have been studied on single crystals by means of a SQUID magnetometer, dielectric measurements and thermal analysis. Anomalies in the temperature dependence of the magnetization have revealed magnetic phase transitions at T N1 =350 K and T N2 =20 K. These two steps of antiferromagnetic ordering are attributed to the microstructural feature of the complex perovskite, characterized by ordered and disordered arrangements on the B-site, giving rise to a strong superexchange interaction of - Fe 3 + - O - Fe 3+ - type with a higher ordering temperature, and to a weak superexchange interaction of the B-site ordered elpasolite type - Fe 3+ + - O - W - O - Fe 3+ - with a lower Neel temperature. The low temperature antiferromagnetic phase exhibits a weak ferromagnetism. The dielectric properties of PFW show a relaxor ferroelectric behaviour with a dispersive maximum of permittivity at Tm (170 -190 K). The magnetic phase transition at T N2 =20 K results in anomalies both of the real part of permittivity and the dissipation factor, suggesting a magneto-electric coupling via magneto-structural interactions

  5. A novel readout integrated circuit for ferroelectric FPA detector

    Science.gov (United States)

    Bai, Piji; Li, Lihua; Ji, Yulong; Zhang, Jia; Li, Min; Liang, Yan; Hu, Yanbo; Li, Songying

    2017-11-01

    Uncooled infrared detectors haves some advantages such as low cost light weight low power consumption, and superior reliability, compared with cryogenically cooled ones Ferroelectric uncooled focal plane array(FPA) are being developed for its AC response and its high reliability As a key part of the ferroelectric assembly the ROIC determines the performance of the assembly. A top-down design model for uncooled ferroelectric readout integrated circuit(ROIC) has been developed. Based on the optical thermal and electrical properties of the ferroelectric detector the RTIA readout integrated circuit is designed. The noise bandwidth of RTIA readout circuit has been developed and analyzed. A novel high gain amplifier, a high pass filter and a low pass filter circuits are designed on the ROIC. In order to improve the ferroelectric FPA package performance and decrease of package cost a temperature sensor is designed on the ROIC chip At last the novel RTIA ROIC is implemented on 0.6μm 2P3M CMOS silicon techniques. According to the experimental chip test results the temporal root mean square(RMS)noise voltage is about 1.4mV the sensitivity of the on chip temperature sensor is 0.6 mV/K from -40°C to 60°C the linearity performance of the ROIC chip is better than 99% Based on the 320×240 RTIA ROIC, a 320×240 infrared ferroelectric FPA is fabricated and tested. Test results shows that the 320×240 RTIA ROIC meets the demand of infrared ferroelectric FPA.

  6. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Varo, Pilar [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Bertoluzzi, Luca [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Bisquert, Juan, E-mail: bisquert@uji.es [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Alexe, Marin [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Coll, Mariona [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia (Spain); Huang, Jinsong [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States); Jimenez-Tejada, Juan Antonio [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Kirchartz, Thomas [IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Faculty of Engineering and CENIDE, University of Duisburg–Essen, Carl-Benz-Str. 199, 47057 Duisburg (Germany); Nechache, Riad; Rosei, Federico [INRS—Center Énergie, Matériaux et Télécommunications, Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2 (Canada); Yuan, Yongbo [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States)

    2016-10-07

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  7. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    International Nuclear Information System (INIS)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

    2016-01-01

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  8. "Negative capacitance" in resistor-ferroelectric and ferroelectric-dielectric networks: Apparent or intrinsic?

    Science.gov (United States)

    Saha, Atanu K.; Datta, Suman; Gupta, Sumeet K.

    2018-03-01

    In this paper, we describe and analytically substantiate an alternate explanation for the negative capacitance (NC) effect in ferroelectrics (FE). We claim that the NC effect previously demonstrated in resistance-ferroelectric (R-FE) networks does not necessarily validate the existence of "S" shaped relation between polarization and voltage (according to Landau theory). In fact, the NC effect can be explained without invoking the "S"-shaped behavior of FE. We employ an analytical model for FE (Miller model) in which the steady state polarization strictly increases with the voltage across the FE and show that despite the inherent positive FE capacitance, reduction in FE voltage with the increase in its charge is possible in a R-FE network as well as in a ferroelectric-dielectric (FE-DE) stack. This can be attributed to a large increase in FE capacitance near the coercive voltage coupled with the polarization lag with respect to the electric field. Under certain conditions, these two factors yield transient NC effect. We analytically derive conditions for NC effect in R-FE and FE-DE networks. We couple our analysis with extensive simulations to explain the evolution of NC effect. We also compare the trends predicted by the aforementioned Miller model with Landau-Khalatnikov (L-K) model (static negative capacitance due to "S"-shape behaviour) and highlight the differences between the two approaches. First, with an increase in external resistance in the R-FE network, NC effect shows a non-monotonic behavior according to Miller model but increases according to L-K model. Second, with the increase in ramp-rate of applied voltage in the FE-DE stack, NC effect increases according to Miller model but decreases according to L-K model. These results unveil a possible way to experimentally validate the actual reason of NC effect in FE.

  9. The spatially anisotropic triangular lattice antiferromagnet: Popov-Fedotov method

    International Nuclear Information System (INIS)

    Nga, Pham Thi Thanh; Trang, Phan Thu; Thang, Nguyen Toan

    2017-01-01

    We present an analysis of the antiferromagnetic Heisenberg model on an triangular lattice with spatially anisotropic J 1 - J 2 exchange interactions. We apply the Popov-Fedotov method based on introducing an imaginary valued chemical potential to enforce the auxiliary fermion constraint exactly. The staggered magnetization, magnon spectra, free energy are computed in one loop approximation and compared using two different constraints: exact and on average. In the limit of zero temperature the results are identical, whereas at higher temperature significant differences are found. The comparisons with the results obtained by other methods are discussed. (paper)

  10. Antiferromagnetism in EuPdGe{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Albedah, Mohammed A. [Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Al-Qadi, Khalid [Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Department of Mathematics, Statistics and Physics, Qatar University, P.O. Box 2713, Doha (Qatar); Stadnik, Zbigniew M., E-mail: stadnik@uottawa.ca [Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Przewoźnik, Janusz [Solid State Physics Department, Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, 30-059 Kraków (Poland)

    2014-11-15

    Highlights: • We show that EuPdGe{sub 3} crystallizes in the BaNiSn{sub 3}-type structure with the lattice constants a = 4.4457(1) Å and c = 10.1703(2). • We demonstrate that EuPdGe{sub 3} is an antiferromagnet with the Néel temperature T{sub N} = 12.16(1) K. • The temperature dependence of the hyperfine magnetic field follows a S = 7/2 Brillouin function. • We find that the Debye temperature of the studied compound is 199(2) K. - Abstract: The results of X-ray diffraction, magnetic susceptibility and magnetization, and {sup 151}Eu Mössbauer spectroscopy measurements of polycrystalline EuPdGe{sub 3} are reported. EuPdGe{sub 3} crystallizes in the BaNiSn{sub 3}-type tetragonal structure (space group I4mm) with the lattice constants a=4.4457(1)Å and c=10.1703(2)Å. The results are consistent with EuPdGe{sub 3} being an antiferromagnet with the Néel temperature T{sub N}=12.16(1)K and with the Eu spins S=7/2 in the ab plane. The temperature dependence of the magnetic susceptibility above T{sub N} follows the modified Curie-Weiss law with the effective magnetic moment of 7.82(1) μ{sub B} per Eu atom and the paramagnetic Curie temperature of -5.3(1)K indicative of dominant antiferromagnetic interactions. The M(H) isotherms for temperatures approaching T{sub N} from above are indicative of dynamical short-range antiferromagnetic ordering in the sample. The temperature dependence of the hyperfine magnetic field follows a S=7/2 Brillouin function. The principal component of the electric field gradient tensor is shown to increase with decreasing temperature and is well described by a T{sup 3/2} power-law relation. The Debye temperature of EuPdGe{sub 3} determined from the Mössbauer data is 199(2) K.

  11. Critical Behaviour of a Two-Dimensional Random Antiferromagnet

    DEFF Research Database (Denmark)

    Als-Nielsen, Jens Aage; Birgeneau, R. J.; Guggenheim, H. J.

    1976-01-01

    A neutron scattering study of the order parameter, correlation length and staggered susceptibility of the two-dimensional random antiferromagnet Rb2Mn0.5Ni0.5F4 is reported. The system is found to exhibit a well-defined phase transition with critical exponents identical to those of the isomorphou...... pure materials K2NiF4 and K2MnF4. Thus, in these systems, which have the asymptotic critical behaviour of the two-dimensional Ising model, randomness has no measurable effect on the phase-transition behaviour....

  12. Competing interactions in ferromagnetic/antiferromagnetic perovskite superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Takamura, Y.; Biegalski, M.B.; Christen, H.M.

    2009-10-22

    Soft x-ray magnetic dichroism, magnetization, and magnetotransport measurements demonstrate that the competition between different magnetic interactions (exchange coupling, electronic reconstruction, and long-range interactions) in La{sub 0.7}Sr{sub 0.3}FeO{sub 3}(LSFO)/La{sub 0.7}Sr{sub 0.3}MnO{sub 3}(LSMO) perovskite oxide superlattices leads to unexpected functional properties. The antiferromagnetic order parameter in LSFO and ferromagnetic order parameter in LSMO show a dissimilar dependence on sublayer thickness and temperature, illustrating the high degree of tunability in these artificially layered materials.

  13. Quantum phase transitions of a disordered antiferromagnetic topological insulator

    Science.gov (United States)

    Baireuther, P.; Edge, J. M.; Fulga, I. C.; Beenakker, C. W. J.; Tworzydło, J.

    2014-01-01

    We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase diagram contains regions where the increase of disorder first causes the appearance of surface conduction (via a topological phase transition), followed by the appearance of bulk conduction (via a metal-insulator transition). The conducting surface states are stabilized by an effective time-reversal symmetry that is broken locally by the disorder but restored on long length scales. A simple self-consistent Born approximation reliably locates the boundaries of this so-called "statistical" topological phase.

  14. Microscopic theory of coexistence of superconductivity and antiferromagnetism

    International Nuclear Information System (INIS)

    Ashkenazi, J.; Kuper, C.G.; Ron, A.

    1983-01-01

    A theory of the coexistence of superconductivity and antiferromagnetism is presented. We study the role of the ''diagonal'' exchange coupling between magnetic ions and conduction electrons, using Eliashberg's formalism. This coupling generates a spatial displacement of the Cooper-paired states, and thus reduces the pairing strength. The reduction is linear in the exchange integral and the staggered magnetization. The theory agrees well with experiment for Dy/sub 1.2/Mo 6 S 8 and Tb/sub 1.2/Mo 6 S 8

  15. Analytical results for a hole in an antiferromagnet

    International Nuclear Information System (INIS)

    Li, Y.M.; d'Ambrumenil, N.; Su, Z.B.

    1996-04-01

    The Green's function for a hole moving in an antiferromagnet is derived analytically in the long-wavelength limit. We find that the infrared divergence is eliminated in two and higher dimensions so that the quasiparticle weight is finite. Our results also suggest that the hole motion is polaronic in nature with a bandwidth proportional to t 2 /J exp[-c(t/J) 2 ] (c is a constant) for J/t >or approx 0.5. The connection of the long-wavelength approximation to the first-order approximation in the cumulant expansion is also clarified. (author). 23 refs, 2 figs

  16. Collective impurity effects in the Heisenberg triangular antiferromagnet

    International Nuclear Information System (INIS)

    Maryasin, V S; Zhitomirsky, M E

    2015-01-01

    We theoretically investigate the Heisenberg antiferromagnet on a triangular lattice doped with nonmagnetic impurities. Two nontrivial effects resulting from collective impurity behavior are predicted. The first one is related to presence of uncompensated magnetic moments localized near vacancies as revealed by the low-temperature Curie tail in the magnetic susceptibility. These moments exhibit an anomalous growth with the impurity concentration, which we attribute to the clustering mechanism. In an external magnetic field, impurities lead to an even more peculiar phenomenon lifting the classical ground-state degeneracy in favor of the conical state. We analytically demonstrate that vacancies spontaneously generate a positive biquadratic exchange, which is responsible for the above degeneracy lifting

  17. Anomalous atomic displacement parameters and local dynamics in the Curie range of a Pb-free relaxor ferroelectric system (Bi1-xBax)(Fe1-xTix)O3(0.36 ≤ x ≤ 0.50)

    Science.gov (United States)

    Singh, Anar; Moriyoshi, Chikako; Kuroiwa, Yoshihiro; Pandey, Dhananjai

    2018-04-01

    We report here the relaxor ferroelectric (RFE) behaviour in a multiferroic solid solution system, (Bi1-xBax)(Fe1-xTix)O3, at a critical disorder level of xC ˜ 0.35 in BiFeO3 and 0.65 (i.e., 1-xC = 0.35) in BaTiO3 similar to the 1:2 ratio of Mg2+ and Nb5+ in the canonical RFE Pb(Mg1/3Nb2/3)O3. This Pb-free system, like canonical Pb-based RFEs, does not exhibit macroscopic symmetry breaking and shows only the signatures of ergodicity breaking at Vogel-Fulcher freezing temperature (TVF). The atomic displacement parameters (ADPs) of Fe3+/Ti4+ and O2-, obtained using high wave vector (Q) and high-resolution synchrotron x-ray diffraction data as a function of temperature, show anomalous diffuse peaks in the Curie range. It is shown that the diffuse peak in ADPs is due to softening of the vibrational frequencies of the B-O chain (B = Fe3+/Ti4+ and O = O2-) below the Burns temperature (TB) followed by hardening below the characteristic temperature (T'm), which corresponds to a peak in the dielectric permittivity (ɛ').

  18. Alignment structures in ferroelectric liquid crystals

    Energy Technology Data Exchange (ETDEWEB)

    Islam, N.U

    1998-07-01

    Although for many years liquid crystals were of purely scientific interest, they have now become ubiquitous in everyday life. The use of the nematic liquid crystal phase in flat panel display applications has been the main factor in this popularity. However, with the advent of the SuperTwist Nematic (STN) device, the limits to which this phase could be exploited for display applications was perhaps reached. With the discovery by Clark et al. of the Surface Stabilised Ferroelectric Liquid Crystal (SSFLC) configuration, the possibility arose of using chiral smectic liquid crystals to create large area, passively addressed, fast switching, flat panel displays. Unfortunately, the structures that form within smectic liquid crystals, and the dynamics of the switching within these, are still not fully understood. In this thesis we address the former of these, making a detailed the study of the structures that form within tilted smectic liquid crystal devices. We present here the first complete theoretical and experimental study of various different ferroelectric liquid crystal materials, where we employed theoretical models based on a simple set of assumptions to understand the behaviour of a set of increasingly complex experimental systems. We started with the simplest of these, Freely Suspended Smectic Films (FSSFs) and then worked with progressively more realistic systems in the form of homeotropically, and later, homogeneously aligned liquid crystal cells. The equilibrium structures that form get particularly complex in the last case, taking the form of tilted and chevron layering structures. In each of these cases, the predictions of the modelling are compared with our experimental results. Further, we present here the first model of the chevron cusp that seeks to include the effects of biaxiality in the S{sub C} phase. We also present a model that seeks to analyse the stability of the chevron layering structure and its relationship with tilted layers. This includes

  19. Alignment structures in ferroelectric liquid crystals

    International Nuclear Information System (INIS)

    Islam, N.U.

    1998-01-01

    Although for many years liquid crystals were of purely scientific interest, they have now become ubiquitous in everyday life. The use of the nematic liquid crystal phase in flat panel display applications has been the main factor in this popularity. However, with the advent of the SuperTwist Nematic (STN) device, the limits to which this phase could be exploited for display applications was perhaps reached. With the discovery by Clark et al. of the Surface Stabilised Ferroelectric Liquid Crystal (SSFLC) configuration, the possibility arose of using chiral smectic liquid crystals to create large area, passively addressed, fast switching, flat panel displays. Unfortunately, the structures that form within smectic liquid crystals, and the dynamics of the switching within these, are still not fully understood. In this thesis we address the former of these, making a detailed the study of the structures that form within tilted smectic liquid crystal devices. We present here the first complete theoretical and experimental study of various different ferroelectric liquid crystal materials, where we employed theoretical models based on a simple set of assumptions to understand the behaviour of a set of increasingly complex experimental systems. We started with the simplest of these, Freely Suspended Smectic Films (FSSFs) and then worked with progressively more realistic systems in the form of homeotropically, and later, homogeneously aligned liquid crystal cells. The equilibrium structures that form get particularly complex in the last case, taking the form of tilted and chevron layering structures. In each of these cases, the predictions of the modelling are compared with our experimental results. Further, we present here the first model of the chevron cusp that seeks to include the effects of biaxiality in the S C phase. We also present a model that seeks to analyse the stability of the chevron layering structure and its relationship with tilted layers. This includes an

  20. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto

    2011-03-01

    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  1. Interfacial effects revealed by ultrafast relaxation dynamics in BiFeO 3 / YBa 2 Cu 3 O 7 bilayers

    KAUST Repository

    Springer, D.

    2016-02-12

    The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO3 (BFO) and superconducting YBa2Cu3O7 (YBCO) grown on a (001) SrTiO3 substrate is studied by a time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCO interface as observed in magnetization data. An extension of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.

  2. Effect of alkaline earth metal doping on thermal, optical, magnetic and dielectric properties of BiFeO3 nanoparticles

    International Nuclear Information System (INIS)

    Bhushan, B; Das, D; Basumallick, A; Bandopadhyay, S K; Vasanthacharya, N Y

    2009-01-01

    Substrate-free pure-phase BiFeO 3 (BFO) nanoparticles doped with alkaline earth metals (Ba, Sr and Ca) have been synthesized by a sol-gel route and their thermal, optical, dielectric and magnetic properties are discussed. The characteristic structural phase transitions of BFO nanoparticles are found to occur at much lower temperatures. A reduction of the Neel temperature has been observed in the doped samples in comparison with the pristine one, whereas the band gap shows a reverse trend. Iron was found to be only in the Fe 3+ valence state in all the doped samples. Magnetoelectric coupling is seen in our samples. Weak ferromagnetism is observed at room temperature in all of the doped and undoped BFO nanoparticles with the largest value of coercive field ∼1.78 kOe and saturation magnetization ∼2.38 emu g -1 for Ba and Ca doped BFO nanoparticles, respectively.

  3. Investigation of the annealing temperature effect on structural, morphology, dielectric and magnetic properties of BiFeO3 nanoparticles

    Science.gov (United States)

    Ranjbar, M.; Ghazi, M. E.; Izadifard, M.

    2018-06-01

    In this paper we have investigated the annealing temperature effect on the structure, morphology, dielectric and magnetic properties of sol-gel synthesized multiferroic BiFeO3 nanoparticles. X-ray diffraction spectroscopy revealed that all the samples have rhombohedrally distorted perovskite structure and the most pure BFO phase is obtained on the sample annealed at 800 °C. Field emission scanning electron microscopy (FESEM) revealed that increasing annealing temperature would increase the particle size. Decrease in dielectric constant was also observed by increasing annealing temperature. Vibrating sample method (VSM) analysis confirmed that samples annealed at 500-700 °C with particle size below the BFO's spiral spin structure length, have well saturated M-H curve and show ferromagnetic behavior.

  4. Combinatorial processing libraries for bulk BiFeO3-PbTiO3 piezoelectric ceramics

    International Nuclear Information System (INIS)

    Hu, W.; Tan, X.; Rajan, K.

    2010-01-01

    A high throughput approach for generating combinatorial libraries with varying processing conditions for bulk ceramics has been developed. This approach utilized the linear temperature gradient in a tube furnace to screen a whole temperature range for optimized preparation. With this approach, the processing of 0.98[0.6BiFeO 3 -0.4PbTiO 3 ]-0.02Pb(Mg 1/3 Nb 2/3 )O 3 ceramic powders and pellets for high-temperature piezoelectric applications was demonstrated to identify the best synthesis conditions for phase purity. The dielectric property measurement on the as-processed solid solution ceramics confirmed the high Curie temperature and the improved loss tangent with the Pb(Mg 1/3 Nb 2/3 )O 3 doping. (orig.)

  5. Interfacial effects revealed by ultrafast relaxation dynamics in BiFeO 3 / YBa 2 Cu 3 O 7 bilayers

    KAUST Repository

    Springer, D.; Nair, Saritha K.; He, Mi; Lu, C. L.; Cheong, S. A.; Wu, Tao; Panagopoulos, C.; Chia, Elbert E. M.; Zhu, Jian-Xin

    2016-01-01

    The temperature dependence of the relaxation dynamics in the bilayer thin film heterostructure composed of multiferroic BiFeO3 (BFO) and superconducting YBa2Cu3O7 (YBCO) grown on a (001) SrTiO3 substrate is studied by a time-resolved pump-probe technique, and compared with that of pure YBCO thin film grown under the same growth conditions. The superconductivity of YBCO is found to be retained in the heterostructure. We observe a speeding up of the YBCO recombination dynamics in the superconducting state of the heterostructure, and attribute it to the presence of weak ferromagnetism at the BFO/YBCO interface as observed in magnetization data. An extension of the Rothwarf-Taylor model is used to fit the ultrafast dynamics of BFO/YBCO, that models an increased quasiparticle occupation of the ferromagnetic interfacial layer in the superconducting state of YBCO.

  6. Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.

    Science.gov (United States)

    Soni, Rohit; Petraru, Adrian; Meuffels, Paul; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Pertsev, Nikolay A; Kohlstedt, Hermann

    2014-11-17

    Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO(3) barrier, La(0.7)Sr(0.3)MnO(3) bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

  7. Organic non-volatile memories from ferroelectric phase separated blends

    Science.gov (United States)

    Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

    2009-03-01

    Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

  8. Why is the electrocaloric effect so small in ferroelectrics?

    Directory of Open Access Journals (Sweden)

    G. G. Guzmán-Verri

    2016-06-01

    Full Text Available Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we derive from well-known microscopic models of ferroelectricity meaningful figures of merit for a wide class of ferroelectric materials. Such figures of merit provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipolar forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. In addition, we bring into question other widely used but empirical figures of merit and facilitate understanding of the recently observed secondary broad peak in the electrocalorics of relaxor ferroelectrics.

  9. Reversible optical control of macroscopic polarization in ferroelectrics

    Science.gov (United States)

    Rubio-Marcos, Fernando; Ochoa, Diego A.; Del Campo, Adolfo; García, Miguel A.; Castro, Germán R.; Fernández, José F.; García, José E.

    2018-01-01

    The optical control of ferroic properties is a subject of fascination for the scientific community, because it involves the establishment of new paradigms for technology1-9. Domains and domain walls are known to have a great impact on the properties of ferroic materials1-24. Progress is currently being made in understanding the behaviour of the ferroelectric domain wall, especially regarding its dynamic control10-12,17,19. New research is being conducted to find effective methodologies capable of modulating ferroelectric domain motion for future electronics. However, the practical use of ferroelectric domain wall motion should be both stable and reversible (rewritable) and, in particular, be able to produce a macroscopic response that can be monitored easily12,17. Here, we show that it is possible to achieve a reversible optical change of ferroelectric domains configuration. This effect leads to the tuning of macroscopic polarization and its related properties by means of polarized light, a non-contact external control. Although this is only the first step, it nevertheless constitutes the most crucial one in the long and complex process of developing the next generation of photo-stimulated ferroelectric devices.

  10. Controlling the properties of ferroelectric-nickelate interfaces

    Science.gov (United States)

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit; Han, Myung-Geun; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick; Ahn, Charles

    2015-03-01

    Ferroelectrics are a class of materials that exhibit a stable, reversible polarization making them useful for non-volatile electronic devices. In devices consisting of thin film ferroelectric PZT acting as a gate and a thin film of the conductive oxide LaNiO3 grown on LaAlO3(001) acting as a channel, we have realized a large change in room temperature channel resistance by switching the ferroelectric polarization. The effect of switching the polarization of the ferroelectric is to modify the electronic structure of the interface between the gate and channel, resulting in conduction in the otherwise insulating ferroelectric. Here, we discuss how changing the epitaxial strain and interface termination of LaNiO3 can result in larger changes in resistivity. The epitaxial strain is varied by growing the devices on LaAlO3 for tensile strain and SrTiO3 for compressive strain. An interface termination of either an atomic layer of NiO2 or LaO is achieved via atomic layering using oxygen plasma assisted molecular beam epitaxy (MBE).

  11. Electron beam diodes using ferroelectric cathodes

    International Nuclear Information System (INIS)

    Ivers, J.D.; Schaechter, L.; Nation, J.A.; Kerslick, G.S.

    1993-01-01

    A new high current density electron source is investigated. The source consists of a polarized ceramic disk with aluminum electrodes coated on both faces. The front electrode is etched in a periodic grid to expose the ceramic beneath. A rapid change in the polarization state of the ceramic results in the emission of a high density electron cloud into a 1 to 10mm diode gap. The anode potential is maintained by a charged transmission line. Some of the emitted electrons traverse the gap and an electron current flows. The emitted electron current has been measured as a function of the gap spacing and the anode potential. Current densities in excess of 70 A/cm 2 have been measured. The current is found to vary linearly with the anode voltage for gaps < 10 mm, and exceeds the Child-Langmuir current by at least two orders of magnitude. The experimental data will be compared with predictions from a model based on the emission of a cloud of electrons from the ferroelectric which in turn reflex in the diode gap

  12. Atomic resolution imaging of ferroelectric domains

    International Nuclear Information System (INIS)

    Bursill, L.A.

    1997-01-01

    Electron optical principles involved in obtaining atomic resolution images of ferroelectric domains are reviewed, including the methods available to obtain meaningful interpretation and analysis of the image detail in terms of the atomic structures. Recent work is concerned with establishing the relationship between the essentially static chemical nanodomains and the spatial and temporal fluctuations of the nanoscale polar domains present in the relaxor class of materials, including lead scandium tantalate (PST) and lead magnesium niobate (PMN). Correct interpretation of the images required use of Next Nearest Neighbour Ising model simulations for the chemical domain textures upon which we must superimpose the polar domain textures; an introduction to this work is presented. A thorough analysis of the atomic scale chemical inhomogeneities, based upon the HRTEM results, has lead to an improved formulation of the theory of the dielectric response of PMN and PST, which is capable to predict the observed temperature and frequency dependence. HRTEM may be combined with solid state and statistical physics principles to provide a deeper understanding of structure/property relationships. 15 refs., 6 figs

  13. Antiferromagnetism and d-wave superconductivity in the Hubbard model

    Energy Technology Data Exchange (ETDEWEB)

    Krahl, H.C.

    2007-07-25

    The two-dimensional Hubbard model is a promising effective model for the electronic degrees of freedom in the copper-oxide planes of high temperature superconductors. We present a functional renormalization group approach to this model with focus on antiferromagnetism and d-wave superconductivity. In order to make the relevant degrees of freedom more explicitly accessible on all length scales, we introduce composite bosonic fields mediating the interaction between the fermions. Spontaneous symmetry breaking is reflected in a non-vanishing expectation value of a bosonic field. The emergence of a coupling in the d-wave pairing channel triggered by spin wave fluctuations is demonstrated. Furthermore, the highest temperature at which the interaction strength for the electrons diverges in the renormalization flow is calculated for both antiferromagnetism and d-wave superconductivity over a wide range of doping. This ''pseudo-critical'' temperature signals the onset of local ordering. Moreover, the temperature dependence of d-wave superconducting order is studied within a simplified model characterized by a single coupling in the d-wave pairing channel. The phase transition within this model is found to be of the Kosterlitz-Thouless type. (orig.)

  14. Anisotropic Magnetoresistance in Antiferromagnetic Sr_{2}IrO_{4}

    Directory of Open Access Journals (Sweden)

    C. Wang

    2014-11-01

    Full Text Available We report point-contact measurements of anisotropic magnetoresistance (AMR in a single crystal of antiferromagnetic Mott insulator Sr_{2}IrO_{4}. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature reveal negative magnetoresistances (up to 28% for modest magnetic fields (250 mT applied within the IrO_{2} a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of magnetoresistance shows a crossover from fourfold to twofold symmetry in response to an increasing magnetic field with angular variations in resistance from 1% to 14%. We tentatively attribute the fourfold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of antiferromagnetic-coupled moments in Sr_{2}IrO_{4}. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys or oxides (0.1%–0.5% and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order, and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also to better harness the power of spintronics in a more technically favorable fashion.

  15. Stability of the antiferromagnetic state in the electron doped iridates

    Science.gov (United States)

    Bhowal, Sayantika; Moradi Kurdestany, Jamshid; Satpathy, Sashi

    2018-06-01

    Iridates such as Sr2IrO4 are of considerable interest owing to the formation of the Mott insulating state driven by a large spin–orbit coupling. However, in contrast to the expectation from the Nagaoka theorem that a single doped hole or electron destroys the anti-ferromagnetic (AFM) state of the half-filled Hubbard model in the large U limit, the anti-ferromagnetism persists in the doped Iridates for a large dopant concentration beyond half-filling. With a tight-binding description of the relevant states by the third-neighbor (t 1, t 2, t 3, U) Hubbard model on the square lattice, we examine the stability of the AFM state to the formation of a spin spiral state in the strong coupling limit. The third-neighbor interaction t 3 is important for the description of the Fermi surface of the electron doped system. A phase diagram in the parameter space is obtained for the regions of stability of the AFM state. Our results qualitatively explain the robustness of the AFM state in the electron doped iridate (such as Sr2‑x La x IrO4), observed in many experiments, where the AFM state continues to be stable until a critical dopant concentration.

  16. Small-scale phase separation in doped anisotropic antiferromagnets

    International Nuclear Information System (INIS)

    Kagan, M Yu; Kugel, K I; Rakhmanov, A L; Pazhitnykh, K S

    2006-01-01

    We analyse the possibility of nanoscale phase separation manifesting itself in the formation of ferromagnetic (FM) polarons (FM droplets) in the general situation of doped anisotropic three- and two-dimensional antiferromagnets. In these cases, we calculate the shape of the most energetically favourable droplets. We show that the binding energy and the volume of a FM droplet in the three-dimensional (3D) case depend upon only two universal parameters J-bar=(J x +J y +J z )S 2 and t eff (t x t y t z ) 1/3 , where J-bar and t eff are effective antiferromagnetic (AFM) exchange and hopping integrals, respectively. In the two-dimensional (2D) case these parameters have the form J-bar=(J x +J y )S 2 and t eff (t x t y ) 1/2 . The most favourable shape of a ferromagnetic droplet corresponds to an ellipse in the 2D case and to an ellipsoid in the 3D case

  17. Electrical control of antiferromagnetic metal up to 15 nm

    Science.gov (United States)

    Zhang, PengXiang; Yin, GuFan; Wang, YuYan; Cui, Bin; Pan, Feng; Song, Cheng

    2016-08-01

    Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in [Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction, the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics.

  18. Low Field Magnetic and Thermal Hysteresis in Antiferromagnetic Dysprosium

    Directory of Open Access Journals (Sweden)

    Iuliia Liubimova

    2017-06-01

    Full Text Available Magnetic and thermal hysteresis (difference in magnetic properties on cooling and heating have been studied in polycrystalline Dy (dysprosium between 80 and 250 K using measurements of the reversible Villari effect and alternating current (AC susceptibility. We argue that measurement of the reversible Villari effect in the antiferromagnetic phase is a more sensitive method to detect magnetic hysteresis than the registration of conventional B(H loops. We found that the Villari point, recently reported in the antiferromagnetic phase of Dy at 166 K, controls the essential features of magnetic hysteresis and AC susceptibility on heating from the ferromagnetic state: (i thermal hysteresis in AC susceptibility and in the reversible Villari effect disappears abruptly at the temperature of the Villari point; (ii the imaginary part of AC susceptibility is strongly frequency dependent, but only up to the temperature of the Villari point; (iii the imaginary part of the susceptibility drops sharply also at the Villari point. We attribute these effects observed at the Villari point to the disappearance of the residual ferromagnetic phase. The strong influence of the Villari point on several magnetic properties allows this temperature to be ranked almost as important as the Curie and Néel temperatures in Dy and likely also for other rare earth elements and their alloys.

  19. The Heisenberg antiferromagnet on the square-kagomé lattice

    Directory of Open Access Journals (Sweden)

    J. Richter

    2009-01-01

    Full Text Available We discuss the ground state, the low-lying excitations as well as high-field thermodynamics of the Heisenberg antiferromagnet on the two-dimensional square-kagomé lattice. This magnetic system belongs to the class of highly frustrated spin systems with an infinite non-trivial degeneracy of the classical ground state as it is also known for the Heisenberg antiferromagnet on the kagomé and on the star lattice. The quantum ground state of the spin-half system is a quantum paramagnet with a finite spin gap and with a large number of non-magnetic excitations within this gap. We also discuss the magnetization versus field curve that shows a plateaux as well as a macroscopic magnetization jump to saturation due to independent localized magnon states. These localized states are highly degenerate and lead to interesting features in the low-temperature thermodynamics at high magnetic fields such as an additional low-temperature peak in the specific heat and an enhanced magnetocaloric effect.

  20. Effects of interfacial frustration in ferromagnet/antiferromagnet bilayers

    Science.gov (United States)

    Urazhdin, Sergei; Ma, Tianyu

    While the ferromagnet (F)/antiferromagnet (AF) bilayers have been extensively studied in the context of exchange bias, and more recently in the context of antiferromagnetic spintronics, the fundamental understanding of the nature of the magnetic state in this system is still a subject a debate. We will present measurements of magnetization aging in several F/AF systems based on AF=FeMn, CoO, and NiO, universally observed in all of these systems when AF layers are sufficiently thin. Quite generally, the aging curves are well-described by the power law with a small exponent. We show that the aging characteristics such as the dependence on temperature and the magnetic history are inconsistent with the Arrhenius activation, disproving the granular models of exchange bias. Furthermore, we show that the aging characteristics qualitatively change across the exchange bias blocking temperature, demonstrating that the latter is similar to the glass transition temperature, and is not simply of a characteristic activation temperature of the AF domains. We discuss the our findings in the context of frustration due to the random effective exchange field at the F/AF interface. supported by NSF DMR.

  1. Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina

    2015-02-06

    Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

  2. Spin wave spectrum and zero spin fluctuation of antiferromagnetic solid 3He

    International Nuclear Information System (INIS)

    Roger, M.; Delrieu, J.M.

    1981-08-01

    The spin wave spectrum and eigenvectors of the uudd antiferromagnetic phase of solid 3 He are calculated; an optical mode is predicted around 150 - 180 Mc and a zero point spin deviation of 0.74 is obtained in agreement with the antiferromagnetic resonance frequency measured by Osheroff

  3. Mn2Au: Body-centered-tetragonal bimetallic antiferromagnets grown by molecular beam epitataxy

    Czech Academy of Sciences Publication Activity Database

    Wu, H.C.; Liao, Z.M.; Sofin, R.G.S.; Feng, G.; Ma, X.M.; Shick, Alexander; Mryasov, O. N.; Shvets, I.V.

    2012-01-01

    Roč. 24, č. 47 (2012), s. 6374-6379 ISSN 0935-9648 Institutional research plan: CEZ:AV0Z10100520 Keywords : antiferromagnets * antiferromagnetic spintronics * exchange bias * molecular beam epitaxy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 14.829, year: 2012

  4. Long range order in the ground state of two-dimensional antiferromagnets

    International Nuclear Information System (INIS)

    Neves, E.J.; Perez, J.F.

    1985-01-01

    The existence of long range order is shown in the ground state of the two-dimensional isotropic Heisenberg antiferromagnet for S >= 3/2. The method yields also long range order for the ground state of a larger class of anisotropic quantum antiferromagnetic spin systems with or without transverse magnetic fields. (Author) [pt

  5. Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

    Science.gov (United States)

    Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

    2013-01-01

    Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

  6. Fast Ferroelectric L-Band Tuner for Superconducting Cavities

    Energy Technology Data Exchange (ETDEWEB)

    Jay L. Hirshfield

    2011-03-01

    Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

  7. A study of radiation vulnerability of ferroelectric material and devices

    International Nuclear Information System (INIS)

    Coiec, Y.M.; Musseau, O.; Leray, J.L.

    1994-01-01

    The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad(Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' x-rays and 60 Co gamma rays

  8. A study of radiation vulnerability of ferroelectric material and devices

    Energy Technology Data Exchange (ETDEWEB)

    Coic, Y M; Musseau, O; Leray, J L [CEA Centre d` Etudes de Bruyeres-le-Chatel, 91 (France)

    1994-12-31

    The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ``10 keV Aracor`` s-rays and {sup 60}Co gamma rays. (author). 24 refs., 11 figs., 7 tabs.

  9. A study of radiation vulnerability of ferroelectric material and devices

    International Nuclear Information System (INIS)

    Coic, Y.M.; Musseau, O.; Leray, J.L.

    1994-01-01

    The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' s-rays and 60 Co gamma rays. (author). 24 refs., 11 figs., 7 tabs

  10. Graphene Dirac point tuned by ferroelectric polarization field

    Science.gov (United States)

    Wang, Xudong; Chen, Yan; Wu, Guangjian; Wang, Jianlu; Tian, Bobo; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Kang, Tingting; Tang, Minghua; Xiao, Yongguang; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

    2018-04-01

    Graphene has received numerous attention for future nanoelectronics and optoelectronics. The Dirac point is a key parameter of graphene that provides information about its carrier properties. There are lots of methods to tune the Dirac point of graphene, such as chemical doping, impurities, defects, and disorder. In this study, we report a different approach to tune the Dirac point of graphene using a ferroelectric polarization field. The Dirac point can be adjusted to near the ferroelectric coercive voltage regardless its original position. We have ensured this phenomenon by temperature-dependent experiments, and analyzed its mechanism with the theory of impurity correlation in graphene. Additionally, with the modulation of ferroelectric polymer, the current on/off ratio and mobility of graphene transistor both have been improved. This work provides an effective method to tune the Dirac point of graphene, which can be readily used to configure functional devices such as p-n junctions and inverters.

  11. Controlling the spin-torque efficiency with ferroelectric barriers

    KAUST Repository

    Useinov, A.; Chshiev, M.; Manchon, Aurelien

    2015-01-01

    Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

  12. Fast Ferroelectric L-Band Tuner for Superconducting Cavities

    International Nuclear Information System (INIS)

    Hirshfield, Jay L.

    2011-01-01

    Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

  13. Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok553@nplindia.org; Shukla, A. K. [National Physical Laboratory (CSIR), Dr. K. S. Krishnan Road, New Delhi-110012 (India); Barrionuevo, D.; Ortega, N.; Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 (United States); Shannigrahi, Santiranjan [Institute of Materials Research and Engineering - IMRE, Agency for Science Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Scott, J. F. [Department of Chemistry and Department of Physics, University of St. Andrews, St. Andrews KY16 ST (United Kingdom)

    2015-03-30

    Self-poled ultra-thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn{sup 3+}/Mn{sup 4+} ion ratio in the LSMO with 7 nm polar capping.

  14. Structural, magnetic and electrical properties of ferromagnetic/ferroelectric multilayers

    International Nuclear Information System (INIS)

    Sirena, M.; Kaul, E.; Guimpel, J.; Steren, L. B.; Pedreros, M. B.; Rodriguez, C. A.

    2011-01-01

    The La 0.75 Sr 0.25 MnO 3 (LSMO)/Ba 0.7 Sr 0.3 TiO 3 (BSTO) superlattices and bilayers, where LSMO is ferromagnetic and BSTO is ferroelectric, were grown by dc sputtering. X-ray diffraction indicates that the samples present a textured growth with the c axis perpendicular to the substrate. Magnetization measurements show a decrease of the sample's magnetization for decreasing ferromagnetic thickness. This effect could be related to the presence of biaxial strain and a magnetic dead layer in the samples. Conductive atomic force microscopy indicates that the samples present a total covering of the ferromagnetic layer for a ferroelectric thickness higher than four unit cells. Transport tunneling of the carriers seems to be the preferred conduction mechanism through the ferroelectric layer. These are promising results for the development of multiferroic tunnel junctions.

  15. Controlling the spin-torque efficiency with ferroelectric barriers

    KAUST Repository

    Useinov, A.

    2015-02-11

    Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

  16. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Draginda, Yu A [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  17. Room temperature ferroelectricity in continuous croconic acid thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

    2016-09-05

    Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

  18. Heterogeneous Ferroelectric Solid Solutions Phases and Domain States

    CERN Document Server

    Topolov, Vitaly

    2012-01-01

    The book deals with perovskite-type ferroelectric solid solutions for modern materials science and applications, solving problems of complicated heterophase/domain structures near the morphotropic phase boundary and applications to various systems with morphotropic phases. In this book domain state–interface diagrams are presented for the interpretation of heterophase states in perovskite-type ferroelectric solid solutions. It allows to describe the stress relief in the presence of polydomain phases, the behavior of unit-cell parameters of coexisting phases and the effect of external electric fields. The novelty of the book consists in (i) the first systematization of data about heterophase states and their evolution in ferroelectric solid solutions (ii) the general interpretation of heterophase and domain structures at changing temperature, composition or electric field (iii) the complete analysis of interconnection domain structures, unit-cell parameters changes, heterophase structures and stress relief.

  19. Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2014-05-28

    Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green\\'s function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

  20. Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien; Waintal, Xavier

    2014-01-01

    Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green's function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

  1. Enhanced magnetization in morphologically and magnetically distinct BiFeO3 and La0.7Sr0.3MnO3 composites

    Science.gov (United States)

    Pillai, Shreeja; Reshi, Hilal Ahmad; Bagwaiya, Toshi; Banerjee, Alok; Shelke, Vilas

    2017-09-01

    Nanomaterials exhibit properties different from those of their bulk counterparts. The modified magnetic characteristics of manganite nanoparticles were exploited to improve magnetization in multiferroic BiFeO3 compound. We studied the composite of two morphologically and magnetically distinct compounds BiFeO3 (BFO) and La0.7Sr0.3MnO3 (LSMO). The microcrystalline BiFeO3 sample was prepared by solid state reaction method and the nanocrystalline La0.7Sr0.3MnO3 by sol-gel method. Composites with nominal compositions (1-x)BiFeO3-(x)La0.7Sr0.3MnO3 were prepared by modified solid state reaction method. The phase purity and crystal structures were checked by using X-ray diffraction. The formation of composites with phase separated BFO and LSMO was confirmed using Raman and Fourier Transform Infrared spectroscopy studies. The composite samples showed relatively high value of magnetization with finite coercivity. This improvement in magnetic behavior is ascribed to the coexistence of multiple magnetic orderings in composite samples. We scrutinized the possibility of oxygen vacancy or Fe mixed valency formation in the samples using X-ray photoelectron spectroscopy technique.

  2. Magnetic and dielectric properties of alkaline earth Ca2+ and Ba2+ ions co-doped BiFeO3 nanoparticles

    International Nuclear Information System (INIS)

    Yang, C.; Liu, C.Z.; Wang, C.M.; Zhang, W.G.; Jiang, J.S.

    2012-01-01

    Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles, Bi 0.8 Ca 0.2−x Ba x FeO 3 (x=0–0.20), were prepared by a sol–gel method. The phase structure, grain size, dielectric and magnetic properties of the prepared samples were investigated. The results showed that the lattice structure of the nanoparticles transformed from rhombohedral (x=0) to orthorhombic (x=0.07–0.19) and then to tetragonal (x=0.20) with x increased. The dielectric properties of the nanoparticles were affected by the properties of the substitutional ions as well as the crystalline structure of the samples. The magnetic properties of the nanoparticles were greatly improved and the T N of the nanoparticles was obviously increased. All the Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles presented the high ratio of M r /M from 0.527 to 0.571 and large coercivity from 4.335 to 5.163 KOe. - Highlights: ► Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles were prepared using a sol–gel method. ► The magnetic properties of the nanoparticles are greatly improved. ► The Neel temperature (T N ) of the nanoparticles is greatly increased. ► Doped ions and crystal structure affect the dielectric properties of the nanoparticles.

  3. Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Woo Young, E-mail: semigumi@kaist.ac.kr [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Lee, Hee Chul [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

    2015-09-30

    Ferroelectricity refers to the property of a dielectric material to undergo spontaneous polarization which originates from the crystalline phase. Hence, ferroelectric materials have a certain degree of surface roughness when they are formed as a thin film. A high degree of surface roughness may cause unintended phenomena when the ferroelectric material is used in electronic devices. Specifically, the quality of subsequently deposited film could be affected by the rough surface. The present study reports that the surface roughness of ferroelectric polymer film can be reduced by a double-spin-coating method of a solution, with control of the solubility of the solution. At an identical thickness of 350 nm, double-spin-coated ferroelectric film has a root-mean-square roughness of only 3 nm, while for single-spin-coated ferroelectric film this value is approximately 16 nm. A ferroelectric-gated field-effect transistor was fabricated using the proposed double-spin-coating method, showing a maximum saturation mobility as much as seven-fold than that of a transistor fabricated with single-spin-coated ferroelectric film. The enhanced saturation mobility could be explained by the Poole–Frenkel conduction mechanism. The proposed method to reduce the surface roughness of ferroelectric film would be useful for high performance organic electronic devices, including crystalline-phase dielectric film. - Highlights: • Single and double-layer solution-processed polymer ferroelectric films were obtained. • Adjusting the solvent solubility allows making double-layer ferroelectric (DF) films. • The DF film has a smoother surface than single-layer ferroelectric (SF) film. • DF-gated transistor has faster saturation mobility than SF-based transistor. • Solvent solubility adjustment led to higher performance organic devices.

  4. Nonlinear piezoelectricity in epitaxial ferroelectrics at high electric fields.

    Science.gov (United States)

    Grigoriev, Alexei; Sichel, Rebecca; Lee, Ho Nyung; Landahl, Eric C; Adams, Bernhard; Dufresne, Eric M; Evans, Paul G

    2008-01-18

    Nonlinear effects in the coupling of polarization with elastic strain have been predicted to occur in ferroelectric materials subjected to high electric fields. Such predictions are tested here for a PbZr0.2Ti0.8O3 ferroelectric thin film at electric fields in the range of several hundred MV/m and strains reaching up to 2.7%. The piezoelectric strain exceeds predictions based on constant piezoelectric coefficients at electric fields from approximately 200 to 400 MV/m, which is consistent with a nonlinear effect predicted to occur at corresponding piezoelectric distortions.

  5. Phase diagrams of ferroelectric nanocrystals strained by an elastic matrix

    Science.gov (United States)

    Nikitchenko, A. I.; Azovtsev, A. V.; Pertsev, N. A.

    2018-01-01

    Ferroelectric crystallites embedded into a dielectric matrix experience temperature-dependent elastic strains caused by differences in the thermal expansion of the crystallites and the matrix. Owing to the electrostriction, these lattice strains may affect polarization states of ferroelectric inclusions significantly, making them different from those of a stress-free bulk crystal. Here, using a nonlinear thermodynamic theory, we study the mechanical effect of elastic matrix on the phase states of embedded single-domain ferroelectric nanocrystals. Their equilibrium polarization states are determined by minimizing a special thermodynamic potential that describes the energetics of an ellipsoidal ferroelectric inclusion surrounded by a linear elastic medium. To demonstrate the stability ranges of such states for a given material combination, we construct a phase diagram, where the inclusion’s shape anisotropy and temperature are used as two parameters. The ‘shape-temperature’ phase diagrams are calculated numerically for PbTiO3 and BaTiO3 nanocrystals embedded into representative dielectric matrices generating tensile (silica glass) or compressive (potassium silicate glass) thermal stresses inside ferroelectric inclusions. The developed phase maps demonstrate that the joint effect of thermal stresses and matrix-induced elastic clamping of ferroelectric inclusions gives rise to several important features in the polarization behavior of PbTiO3 and BaTiO3 nanocrystals. In particular, the Curie temperature displays a nonmonotonic variation with the ellipsoid’s aspect ratio, being minimal for spherical inclusions. Furthermore, the diagrams show that the polarization orientation with respect to the ellipsoid’s symmetry axis is controlled by the shape anisotropy and the sign of thermal stresses. Under certain conditions, the mechanical inclusion-matrix interaction qualitatively alters the evolution of ferroelectric states on cooling, inducing a structural transition

  6. Ferroelectric and ferroelastic domain structures in piezoelectric ceramics

    International Nuclear Information System (INIS)

    Bursill, L.A.; Julin Peng.

    1990-01-01

    A discussion of the results of conventional and high-resolution high-voltage electron microscopic studies of two ferroelectrics, barium sodium niobate and lead zirconium titanate is presented. It is shown that a rich variety of information such as ferroelectric and/or ferroelastic domains discommensurations versus antiphase boundaries, extended versus localized chemical defects and multiphase versus grain boundaries, become accessible in both single crystal and polycrystalline piezoelectrics, when a combination of high-resolution and conventional electron optical techniques is used. 15 refs., 8 figs

  7. Ferroelectric-antiferroelectric mixed systems. Equation of state, thermodynamic functions

    Directory of Open Access Journals (Sweden)

    N.A.Korynevskii

    2006-01-01

    Full Text Available The problem of equation of state for ferroelectric-antiferroelectric mixed systems in the whole region of a concentration change (0≤n≤1 is discussed. The main peculiarity of the presented model turns out to be the possibility for the site dipole momentum to be oriented ferroelectrically in z-direction and antiferroelectrically in x-direction. Such a situation takes place in mixed compounds of KDP type. The different phases (ferro-, antiferro-, paraelectric, dipole glass and some combinations of them have been found and analyzed.

  8. Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

    Science.gov (United States)

    Phatak, C.; Petford-Long, A. K.; Beleggia, M.; De Graef, M.

    2014-06-01

    Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift computation for a uniformly polarized prolate ellipsoid with varying aspect ratio in the absence of screening charges.

  9. Acoustic emission mechanism at switching of ferroelectric crystals

    International Nuclear Information System (INIS)

    Belov, V.V.; Morozova, G.P.; Serdobol'skaya, O.Yu.

    1986-01-01

    Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO

  10. Acoustic emission mechanism at switching of ferroelectric crystals

    Energy Technology Data Exchange (ETDEWEB)

    Belov, V V; Morozova, G P; Serdobol' skaya, O Yu

    1986-01-01

    Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO.

  11. Voltage tunability of thermal conductivity in ferroelectric materials

    Science.gov (United States)

    Ihlefeld, Jon; Hopkins, Patrick Edward

    2016-02-09

    A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

  12. Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

    Science.gov (United States)

    Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.

    2010-01-01

    This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

  13. Stress effects in ferroelectric perovskite thin-films

    Science.gov (United States)

    Zednik, Ricardo Johann

    The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

  14. Ferroelectric tunnel junctions with multi-quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)

    2014-06-02

    Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

  15. Composition-driven magnetic and structural phase transitions in Bi1-xPrxFe1-xMnxO3 multiferroics

    Science.gov (United States)

    Khomchenko, V. A.; Ivanov, M. S.; Karpinsky, D. V.; Paixão, J. A.

    2017-09-01

    Magnetic ferroelectrics continue to attract much attention as promising multifunctional materials. Among them, BiFeO3 is distinguished by exceptionally high transition temperatures and, thus, is considered as a prototype room-temperature multiferroic. Since its properties are known to be strongly affected by chemical substitution, recognition of the doping-related factors determining the multiferroic behavior of the material would pave the way towards designing the structures with enhanced magnetoelectric functionality. In this paper, we report on the crystal structure and magnetic and local ferroelectric properties of the Bi1-xPrxFe1-xMnxO3 (x ≤ 0.3) compounds prepared by a solid state reaction method. The polar R3c structure specific to the parent BiFeO3 has been found to be unstable with respect to doping for x ≳ 0.1. Depending on the Pr/Mn concentration, either the antipolar PbZrO3-like or nonpolar PrMnO3-type structure can be observed. It has been shown that the non-ferroelectric compounds are weak ferromagnetic with the remanent/spontaneous magnetization linearly decreasing with an increase in x. The samples containing the polar R3c phase exhibit a mixed antiferromagnetic/weak ferromagnetic behavior. The origin of the magnetic phase separation taking place in the ferroelectric phase is discussed as related to the local, doping-introduced structural heterogeneity contributing to the suppression of the cycloidal antiferromagnetic ordering characteristic of the pure BiFeO3.

  16. Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

    Science.gov (United States)

    Kim, Do-Kyung; Lee, Gyu-Jeong; Lee, Jae-Hyun; Kim, Min-Hoi; Bae, Jin-Hyuk

    2018-05-01

    We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on–off ratio and a low-voltage reading operation.

  17. Ferroelectric BaTiO3 and LiNbO3 Nanoparticles Dispersed in Ferroelectric Liquid Crystal Mixtures: Electrooptic and Dielectric (Postprint)

    Science.gov (United States)

    2016-10-14

    strength for non- doped LF4 and LiNbO3/LF4 nanocolloids at temperature 30C. 146 R. K . SHUKLA ET AL. 6 Distribution A. Approved for public release (PA...AFRL-RX-WP-JA-2017-0210 FERROELECTRIC BaTiO3 AND LiNbO3 NANOPARTICLES DISPERSED IN FERROELECTRIC LIQUID CRYSTAL MIXTURES: ELECTROOPTIC...COMMAND UNITED STATES AIR FORCE Ferroelectric BaTiO3 and LiNbO3 nanoparticles dispersed in ferroelectric liquid crystal mixtures: Electrooptic and

  18. Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun; Kim, Young-Min; Jeong, Hu Young; Borisevich, Albina Y.; Lee, Su Yong; Noh, Do Young; Kwon, Owoong; Kim, Yunseok; Jo, Ji Young

    2016-12-01

    For epitaxial films, a critical thickness (tc) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO3/SrRuO3/SrTiO3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.

  19. Charge dynamics of the antiferromagnetically ordered Mott insulator

    International Nuclear Information System (INIS)

    Han, Xing-Jie; Li, Xin; Chen, Jing; Liao, Hai-Jun; Xiang, Tao; Liu, Yu; Liu, Zhi-Yuan; Xie, Zhi-Yuan; Normand, B

    2016-01-01

    We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon–doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon–doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott–Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of

  20. Charge dynamics of the antiferromagnetically ordered Mott insulator

    Science.gov (United States)

    Han, Xing-Jie; Liu, Yu; Liu, Zhi-Yuan; Li, Xin; Chen, Jing; Liao, Hai-Jun; Xie, Zhi-Yuan; Normand, B.; Xiang, Tao

    2016-10-01

    We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon-doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon-doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott-Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the