Ferroelectric domain switching dynamics and memristive behaviors in BiFeO3-based magnetoelectric heterojunctions

Science.gov (United States)

Huang, Weichuan; Liu, Yukuai; Luo, Zhen; Hou, Chuangming; Zhao, Wenbo; Yin, Yuewei; Li, Xiaoguang

2018-06-01

The ferroelectric domain reversal dynamics and the corresponding resistance switching as well as the memristive behaviors in epitaxial BiFeO3 (BFO, ~150 nm) based multiferroic heterojunctions were systematically investigated. The ferroelectric domain reversal dynamics could be described by the nucleation-limited-switching model with the Lorentzian distribution of logarithmic domain-switching times. By engineering the domain states, multi and even continuously tunable resistances states, i.e. memristive states, could be non-volatilely achieved. The resistance switching speed can be as fast as 30 ns in the BFO-based multiferroic heterojunctions with a write voltage of ~20 V. By reducing the thickness of BFO, the La0.6Sr0.4MnO3/BFO (~5 nm)/La0.6Sr0.4MnO3 multiferroic tunnel junction (MFTJ) shows an even a quicker switching speed (20 ns) with a much lower operation voltage (~4 V). Importantly, the MFTJ exhibits a tunable interfacial magnetoelectric coupling related to the ferroelectric domain switching dynamics. These findings enrich the potential applications of multiferroic BFO based devices in high-speed, low-power, and high-density memories as well as future neuromorphic computational architectures.

Investigation of electromagnetic properties of BiFeO3 by Time Differential Perturbed Angular Correlation (TDPAC) technique at ISOLDE

CERN Document Server

Efe, Ipek

2017-01-01

Time differential perturbed angular correlation (TDPAC) technique is one of the most sensitive techniques to study about the electric and magnetic fields at the individual lattice points. It benefits from the hyperfine interactions between the probe atom and its neighborhood. Multiferroic materials have been intensively studied to promote and understand the possibility of controlling magnetic properties by electric fields instead of magnetic fields which opens the path to faster, smaller, and more energy-efficient spintronic devices, such as memory elements, high-frequency magnetic devices, and micro-electro-mechanical systems, for data-storage technologies. BiFeO3 is one of the famous and important multiferroic materials since it shows both antiferromagnetic and ferroelectric behavior at room temperature. In this study, we report on the first time-differential perturbed angular correlation (TDPAC) measurements carried out on polycrystalline BiFeO3 samples using the nuclear probe 181Hf(181Ta) after implantati...

Observation of room temperature saturated ferroelectric polarization in Dy substituted BiFeO3 ceramics

KAUST Repository

Zhang, Shuxia

2012-04-06

High quality Bi1− x Dy x FeO3 (0 ≤ x ≤ 0.15) ceramics have been fabricated by sintering Dy-doped BiFeO3 (BFO) precursor powders at a low temperature of 780 °C. The magnetic properties of BFO were improved by the introduction of Dy on the Bi-site. More importantly, well saturated ferroelectric hysteresis loops and polarization switching currents have been observed at room temperature. A large remnant polarization (2P r) value of 62 μC/cm2 is achieved, which is the highest value reported so far for rare-earth-doped BFO ceramics. Moreover, mechanisms for improved multiferroic properties depending on chemical doping-caused structure evolutions have also been discussed.

Observation of room temperature saturated ferroelectric polarization in Dy substituted BiFeO3 ceramics

KAUST Repository

Zhang, Shuxia; Wang, Lei; Chen, Yao; Wang, Dongliang; Yao, Yingbang; Ma, Yanwei

2012-01-01

High quality Bi1− x Dy x FeO3 (0 ≤ x ≤ 0.15) ceramics have been fabricated by sintering Dy-doped BiFeO3 (BFO) precursor powders at a low temperature of 780 °C. The magnetic properties of BFO were improved by the introduction of Dy on the Bi-site. More importantly, well saturated ferroelectric hysteresis loops and polarization switching currents have been observed at room temperature. A large remnant polarization (2P r) value of 62 μC/cm2 is achieved, which is the highest value reported so far for rare-earth-doped BFO ceramics. Moreover, mechanisms for improved multiferroic properties depending on chemical doping-caused structure evolutions have also been discussed.

Structural, magnetic, and ferroelectric properties of T-like cobalt-doped BiFeO3 thin films

Science.gov (United States)

Young, T.; Sharma, P.; Kim, D. H.; Ha, Thai Duy; Juang, Jenh-Yih; Chu, Y.-H.; Seidel, J.; Nagarajan, V.; Yasui, S.; Itoh, M.; Sando, D.

2018-02-01

We present a comprehensive study of the physical properties of epitaxial cobalt-doped BiFeO3 films ˜50 nm thick grown on (001) LaAlO3 substrates. X-ray diffraction and magnetic characterization demonstrate high quality purely tetragonal-like (T') phase films with no parasitic impurities. Remarkably, the step-and-terrace film surface morphology can be fully recovered following a local electric-field-induced rhombohedral-like to T' phase transformation. Local switching spectroscopy experiments confirm the ferroelectric switching to follow previously reported transition pathways. Critically, we show unequivocal evidence for conduction at domain walls between polarization variants in T'-like BFO, making this material system an attractive candidate for domain wall-based nanoelectronics.

Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO3 thin film

International Nuclear Information System (INIS)

Gupta, Surbhi; Gupta, Vinay; Tomar, Monika; James, A. R.; Pal, Madhuparna; Guo, Ruyan; Bhalla, Amar

2014-01-01

Multiferroic Bismuth Ferrite (BiFeO 3 ) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO 3 thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO 3 and Fe 2 O 3 to pure BiFeO 3 phase and, subsequently, to a mixture of BiFeO 3 and Bi 2 O 3 with increase in the concentration of excess Bi from 0% to 15%. BiFeO 3 thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe 2 O 3 ). Deterioration in ferroic properties of BiFeO 3 thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO 3 thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm 2 and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO 3 thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO 3 thin films exhibiting the improved multiferroic properties.

Structural, magnetic and electric properties of Nd and Ni co-doped BiFeO3 materials

Directory of Open Access Journals (Sweden)

Dao Viet Thang

2017-09-01

Full Text Available Multiferroic Bi1−xNdxFe0.975Ni0.025O3 (x = 0.00, 0.05, 0.10, 0.125, and 0.15 (BNFNO and BiFeO3 (BFO materials were synthesized by a sol-gel method. Crystal structure, ferromagnetic and ferroelectric properties of the as-synthesized materials were investigated. Results showed that Nd3+ and Ni2+ co-doping affected to the electrical leakage, enhanced ferroelectric polarization and magnetization of BiFeO3. Co-doped sample with 12.5 mol% of Nd3+ and 2.5 mol% of Ni2+ exhibited an enhancement in both ferromagnetism and ferroelectric properties up to MS ~ 0.528 emu/g and PS ~ 18.35 μC/cm2 with applied electric field at 5 kV/cm, respectively. The origins of ferromagnetism and ferroelectricity enhancement were discussed in the paper.

BiFeO3 thin films: Novel effects

Indian Academy of Sciences (India)

photolithography followed by etching of the silver film. Saturation ... Fe in +3 state. Films thus obtained are therefore highly resistive (ρ ∼ 108–109 cm) and hence exhibit saturated ferroelectric hysteresis loop (figure 3). Anomaly in ... BiFeO3 bulk sample by Rogniskaya et al [4] had indicated abrupt change in lattice parame-.

Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

KAUST Repository

Yao, Yingbang; Zhang, Bei; Chen, Long; Yang, Yang; Wang, Zhihong; Alshareef, Husam N.; Zhang, Xixiang

2012-01-01

Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar

Magnetic structure driven ferroelectricity and large magnetoelectric coupling in antiferromagnet Co4Nb2O9

Science.gov (United States)

Srivastava, P.; Chaudhary, S.; Maurya, V.; Saha, J.; Kaushik, S. D.; Siruguri, V.; Patnaik, S.

2018-05-01

Synthesis and extensive structural, pyroelectric, magnetic, dielectric and magneto-electric characterizations are reported for polycrystalline Co4Nb2O9 towards unraveling the multiferroic ground state. Magnetic measurements confirm that Co4Nb2O9 becomes an anti-ferromagnet at around 28 K. Associated with the magnetic phase transition, a sharp peak in pyroelectric current indicates the appearance of strong magneto-electric coupling below Neel temperature (TN) along with large coupling constant upto 17.8 μC/m2T. Using temperature oscillation technique, we establish Co4Nb2O9 to be a genuine multiferroic with spontaneous electric polarization in the anti-ferromagnetic state in the absence of magnetic field poling. This is in agreement with our low temperature neutron diffraction studies that show the magnetic structure of Co4Nb2O9 to be that of a non-collinear anti-ferromagnet with ferroelectric ground state.

Self-Poling of BiFeO3 Thick Films.

Science.gov (United States)

Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

2016-08-03

Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

Room-temperature saturated ferroelectric polarization in BiFeO3 ceramics synthesized by rapid liquid phase sintering

International Nuclear Information System (INIS)

Wang, Y.P.; Zhou, L.; Zhang, M.F.; Chen, X.Y.; Liu, J.-M.; Liu, Z.G.

2004-01-01

Single-phased ferroelectromagnet BiFeO 3 ceramics with high resistivity were synthesized by a rapid liquid phase sintering technique. Saturated ferroelectric hysteresis loops were observed at room temperature in the ceramics sintered at 880 deg. C for 450 s. The spontaneous polarization, remnant polarization, and the coercive field are 8.9 μC/cm 2 , 4.0 μC/cm 2 , and 39 kV/cm, respectively, under an applied field of 100 kV/cm. It is proposed that the formation of Fe 2+ and an oxygen deficiency leading to the higher leakage can be greatly suppressed by the very high heating rate, short sintering period, and liquid phase sintering technique. The latter was also found effective in increasing the density of the ceramics. The sintering technique developed in this work is expected to be useful in synthesizing other ceramics from multivalent or volatile starting materials

Real-space imaging of non-collinear antiferromagnetic order with a single-spin magnetometer

Science.gov (United States)

Gross, I.; Akhtar, W.; Garcia, V.; Martínez, L. J.; Chouaieb, S.; Garcia, K.; Carrétéro, C.; Barthélémy, A.; Appel, P.; Maletinsky, P.; Kim, J.-V.; Chauleau, J. Y.; Jaouen, N.; Viret, M.; Bibes, M.; Fusil, S.; Jacques, V.

2017-09-01

Although ferromagnets have many applications, their large magnetization and the resulting energy cost for switching magnetic moments bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems do not suffer from this problem, and often have extra functionalities: non-collinear spin order may break space-inversion symmetry and thus allow electric-field control of magnetism, or may produce emergent spin-orbit effects that enable efficient spin-charge interconversion. To harness these traits for next-generation spintronics, the nanoscale control and imaging capabilities that are now routine for ferromagnets must be developed for antiferromagnetic systems. Here, using a non-invasive, scanning single-spin magnetometer based on a nitrogen-vacancy defect in diamond, we demonstrate real-space visualization of non-collinear antiferromagnetic order in a magnetic thin film at room temperature. We image the spin cycloid of a multiferroic bismuth ferrite (BiFeO3) thin film and extract a period of about 70 nanometres, consistent with values determined by macroscopic diffraction. In addition, we take advantage of the magnetoelectric coupling present in BiFeO3 to manipulate the cycloid propagation direction by an electric field. Besides highlighting the potential of nitrogen-vacancy magnetometry for imaging complex antiferromagnetic orders at the nanoscale, these results demonstrate how BiFeO3 can be used in the design of reconfigurable nanoscale spin textures.

Controllable Photovoltaic Effect of Microarray Derived from Epitaxial Tetragonal BiFeO3 Films.

Science.gov (United States)

Lu, Zengxing; Li, Peilian; Wan, Jian-Guo; Huang, Zhifeng; Tian, Guo; Pan, Danfeng; Fan, Zhen; Gao, Xingsen; Liu, Jun-Ming

2017-08-16

Recently, the ferroelectric photovoltaic (FePV) effect has attracted great interest due to its potential in developing optoelectronic devices such as solar cell and electric-optical sensors. It is important for actual applications to realize a controllable photovoltaic process in ferroelectric-based materials. In this work, we prepared well-ordered microarrays based on epitaxially tetragonal BiFeO 3 (T-BFO) films by the pulsed laser deposition technique. The polarization-dependent photocurrent image was directly observed by a conductive atomic force microscope under ultraviolet illumination. By choosing a suitable buffer electrode layer and controlling the ferroelectric polarization in the T-BFO layer, we realized the manipulation of the photovoltaic process. Moreover, based on the analysis of the band structure, we revealed the mechanism of manipulating the photovoltaic process and attributed it to the competition between two key factors, i.e., the internal electric field caused by energy band alignments at interfaces and the depolarization field induced by the ferroelectric polarization in T-BFO. This work is very meaningful for deeply understanding the photovoltaic process of BiFeO 3 -based devices at the microscale and provides us a feasible avenue for developing data storage or logic switching microdevices based on the FePV effect.

Composition-driven magnetic and structural phase transitions in Bi1-xPrxFe1-xMnxO3 multiferroics

Science.gov (United States)

Khomchenko, V. A.; Ivanov, M. S.; Karpinsky, D. V.; Paixão, J. A.

2017-09-01

Magnetic ferroelectrics continue to attract much attention as promising multifunctional materials. Among them, BiFeO3 is distinguished by exceptionally high transition temperatures and, thus, is considered as a prototype room-temperature multiferroic. Since its properties are known to be strongly affected by chemical substitution, recognition of the doping-related factors determining the multiferroic behavior of the material would pave the way towards designing the structures with enhanced magnetoelectric functionality. In this paper, we report on the crystal structure and magnetic and local ferroelectric properties of the Bi1-xPrxFe1-xMnxO3 (x ≤ 0.3) compounds prepared by a solid state reaction method. The polar R3c structure specific to the parent BiFeO3 has been found to be unstable with respect to doping for x ≳ 0.1. Depending on the Pr/Mn concentration, either the antipolar PbZrO3-like or nonpolar PrMnO3-type structure can be observed. It has been shown that the non-ferroelectric compounds are weak ferromagnetic with the remanent/spontaneous magnetization linearly decreasing with an increase in x. The samples containing the polar R3c phase exhibit a mixed antiferromagnetic/weak ferromagnetic behavior. The origin of the magnetic phase separation taking place in the ferroelectric phase is discussed as related to the local, doping-introduced structural heterogeneity contributing to the suppression of the cycloidal antiferromagnetic ordering characteristic of the pure BiFeO3.

Functional Properties at Domain Walls in BiFeO3: Electrical, Magnetic, and Structural investigations

Science.gov (United States)

He, Qing; Yang, C.-H.; Yu, P.; Gajek, M.; Seidel, J.; Ramesh, R.; Wang, F.; Chu, Y.-H.; Martin, L. W.; Spaldin, N.; Rother, A.

2009-03-01

BiFeO3 (BFO) is a widely studied robust ferroelectric, antiferromagnetic multiferroic. Conducting-atomic force microscopy studies reveal the presence of enhanced conductivity at certain types of domain walls in BFO. We have completed detailed TEM studies of the physical structure at these domain walls as well as in-depth DFT calculations of the evolution of electronic structure at these domain walls. These studies reveal two major contributions to the observed conduction: the formation of an electrostatic potential at the domain walls as well as a structurally-driven change in the electronic structure (i.e., a lower band gap locally) at the domain walls. We will discuss the use of optical characterization techniques as a way of probing this change in electronic structure at domain walls as well as detailed IV characterization both in atmospheric and UHV environments. Finally, the evolution of magnetism at these domain walls has been studied through the use of photoemission measurements. Initial findings point to a significant change in the magnetic order at these domain walls in BFO.

Multiferroic properties of BiFeO3/BaTiO3 multilayered thin films

International Nuclear Information System (INIS)

Sharma, Savita; Tomar, Monika; Kumar, Ashok; Puri, Nitin K.; Gupta, Vinay

2014-01-01

Multilayered structures of multiferroic BiFeO 3 (BFO) and ferroelectric BaTiO 3 (BTO) have been fabricated using pulsed laser deposition (PLD). Ferromagnetic and ferroelectric properties of the multilayered system (BFO/BTO) have been investigated. It could be inferred that the magnetization increases with the incorporation of BTO buffer layer, which indicates a coupling between the ferroelectric and ferromagnetic orders. Vibrating sample magnetometer (VSM) measurements performed on the prepared multiferroic samples show that the magnetization is significantly increased (M s =56.88 emu/cm 3 ) for the multilayer system with more number of layers (four) keeping the total thickness of the multilayered system constant (350 nm) meanwhile maintaining the sufficiently enhanced ferroelectric properties (P r =29.68 µC/cm 2 )

Ultrathin limit and dead-layer effects in local polarization switching of BiFeO3

NARCIS (Netherlands)

Maksymovych, P.; Huijben, Mark; Pan, M.; Jesse, S.; Balke, N.; Chu, Y.H.; Chang, H.J.; Borisevich, A.Y.; Baddorf, A.P.; Rijnders, Augustinus J.H.M.; Blank, David H.A.; Ramesh, R.; Kalinin, S.V.

2012-01-01

Using piezoresponse force microscopy in an ultrahigh vacuum, polarization switching has been detected and quantified in epitaxial BiFeO3 films from 200 to about 4 unit cells thick. Local remnant piezoresponse was utilized to probe both ferroelectric properties and effects of imperfect electrical

Ferroelectric BiFeO3as an Oxide Dye in Highly Tunable Mesoporous All-Oxide Photovoltaic Heterojunctions

KAUST Repository

Wang, Lingfei

2016-10-12

As potential photovoltaic materials, transition-metal oxides such as BiFeO3 (BFO) are capable of absorbing a substantial portion of solar light and incorporating ferroic orders into solar cells with enhanced performance. But the photovoltaic application of BFO has been hindered by low energy-conversion efficiency due to poor carrier transport and collection. In this work, a new approach of utilizing BFO as a light-absorbing sensitizer is developed to interface with charge-transporting TiO2 nanoparticles. This mesoporous all-oxide architecture, similar to that of dye-sensitized solar cells, can effectively facilitate the extraction of photocarriers. Under the standard AM1.5 (100 mW cm−2) irradiation, the optimized cell shows an open-circuit voltage of 0.67 V, which can be enhanced to 1.0 V by tailoring the bias history. A fill factor of 55% is achieved, which is much higher than those in previous reports on BFO-based photovoltaic devices. The results provide here a new viable approach toward developing highly tunable and stable photovoltaic devices based on ferroelectric transition-metal oxides.

BiFeO3-doped (Na0.5K0.5NbO3 lead-free piezoelectric ceramics

Directory of Open Access Journals (Sweden)

Xueyi Sun et al

2008-01-01

Full Text Available Lead-free piezoelectric ceramics (1−x(Na0.5K0.5NbO3-xBiFeO3 (x=0~0.07 were synthesized by the solid-state reaction. Differential scanning calorimetry (DSC measurements revealed that an increase in the amount of BiFeO3 dopant resulted in a decrease in the orthorhombic-tetragonal and tetragonal-cubic phase transition temperature of the material. One percent BiFeO3 additive suppressed grain growth, which not only benefits the sintering of ceramics but also enhances the piezoelectric and ferroelectric properties, where d33=145pC/N, kp=0.31, Qm=80, Pr=11.3 μC cm−2 and Ec=16.5 kV cm−1. As xBF>0.01, both piezoelectric and ferroelectric properties decreased rapidly with an increasing amount of dopant.

Coexistence of room temperature ferroelectricity and ferrimagnetism in multiferroic BiFeO3-Bi0.5Na0.5TiO3 solid solution

International Nuclear Information System (INIS)

Tian, Z.M.; Wang, C.H.; Yuan, S.L.; Wu, M.S.; Ma, Z.Z.; Duan, H.N.; Chen, L.

2011-01-01

Highlights: → In this study, the coexistence of ferroelectrics and ferrimagnetism have been observed at room temperature for the (1 - x)BiFeO 3 -xBi 0.5 Na 0.5 TiO 3 (x = 0.37) solid solutions. → X-ray diffraction and Raman spectroscopy measurements show a single-phase perovskite structure with no impurities identified. → A magnetic transition from paramagnetic (PM) to ferrimagnetic (Ferri) ordering is observed for the solution with Curie temperature T C ∼ 330 K. - Abstract: The structure, ferroelectric and magnetic properties of (1 - x)BiFeO 3 -xBi 0.5 Na 0.5 TiO 3 (x = 0.37) solid solution fabricated by a sol-gel method have been investigated. X-ray diffraction and Raman spectroscopy measurements show a single-phase perovskite structure with no impurities identified. Compared with pure BiFeO 3 , the coexistence of ferroelectricity and ferrimagnetism have been observed at room temperature for the solution with remnant polarization P r = 1.41 μC/cm 2 and remnant magnetization M r = 0.054 emu/g. Importantly, a magnetic transition from ferrimagnetic (FM) ordering to paramagnetic (PM) state is observed, with Curie temperature T C ∼ 330 K, being explained in terms of the suppression of cycloid spin configuration by the structural distortion.

Spintronics with multiferroics

Science.gov (United States)

Béa, H.; Gajek, M.; Bibes, M.; Barthélémy, A.

2008-10-01

In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO3 allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

Spintronics with multiferroics

International Nuclear Information System (INIS)

Bea, H; Gajek, M; Bibes, M; Barthelemy, A

2008-01-01

In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO 3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO 3 allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO 3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO 3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO 3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO 3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

Ferroelectric BiFeO3 as an Oxide Dye in Highly Tunable Mesoporous All-Oxide Photovoltaic Heterojunctions.

Science.gov (United States)

Wang, Lingfei; Ma, He; Chang, Lei; Ma, Chun; Yuan, Guoliang; Wang, Junling; Wu, Tom

2017-01-01

As potential photovoltaic materials, transition-metal oxides such as BiFeO 3 (BFO) are capable of absorbing a substantial portion of solar light and incorporating ferroic orders into solar cells with enhanced performance. But the photovoltaic application of BFO has been hindered by low energy-conversion efficiency due to poor carrier transport and collection. In this work, a new approach of utilizing BFO as a light-absorbing sensitizer is developed to interface with charge-transporting TiO 2 nanoparticles. This mesoporous all-oxide architecture, similar to that of dye-sensitized solar cells, can effectively facilitate the extraction of photocarriers. Under the standard AM1.5 (100 mW cm -2 ) irradiation, the optimized cell shows an open-circuit voltage of 0.67 V, which can be enhanced to 1.0 V by tailoring the bias history. A fill factor of 55% is achieved, which is much higher than those in previous reports on BFO-based photovoltaic devices. The results provide here a new viable approach toward developing highly tunable and stable photovoltaic devices based on ferroelectric transition-metal oxides. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Concurrent transition of ferroelectric and magnetic ordering near room temperature.

Science.gov (United States)

Ko, Kyung-Tae; Jung, Min Hwa; He, Qing; Lee, Jin Hong; Woo, Chang Su; Chu, Kanghyun; Seidel, Jan; Jeon, Byung-Gu; Oh, Yoon Seok; Kim, Kee Hoon; Liang, Wen-I; Chen, Hsiang-Jung; Chu, Ying-Hao; Jeong, Yoon Hee; Ramesh, Ramamoorthy; Park, Jae-Hoon; Yang, Chan-Ho

2011-11-29

Strong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic Néel temperature of the multiferroic compound BiFeO(3) is suppressed to around room temperature by heteroepitaxial misfit strain. Remarkably, the ferroelectric state undergoes a first-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our findings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.

Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films

International Nuclear Information System (INIS)

Guo Yiping; Guo Bing; Dong Wen; Li Hua; Liu Hezhou

2013-01-01

The diode and photovoltaic effects of BiFeO 3 and Bi 0.9 Sr 0.1 FeO 3−δ polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi 0.9 Sr 0.1 FeO 3−δ thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO 3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities. (paper)

Synthesis of BiFeO3 thin films on single-terminated Nb : SrTiO3 (111 substrates by intermittent microwave assisted hydrothermal method

Directory of Open Access Journals (Sweden)

Ivan Velasco-Davalos

2016-06-01

Full Text Available We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO3 (111 substrates and the deposition of ferroelectric BiFeO3 thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO34− or Ti4+ layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d111 and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO3 single crystal substrates. Multiferroic BiFeO3 thin films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO3 (111 substrates. Bi(NO33 and Fe(NO33 along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO3 films on Nb : SrTiO3 (100 substrates was verified by piezoresponse force microscopy.

Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors.

Science.gov (United States)

Ihlefeld, Jon F; Tian, Wei; Liu, Zi-Kui; Doolittle, W Alan; Bernhagen, Margitta; Reiche, Peter; Uecker, Reinhard; Ramesh, Ramamoorthy; Schlom, Darrell G

2009-08-01

BiFeO3 thin films have been deposited on (001) SrTiO3, (101) DyScO3, (011) DyScO3, (0001) AlGaN/GaN, and (0001) 6H-SiC single crystal substrates by reactive molecular beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry in accordance with thermodynamic calculations. Four-circle x-ray diffraction and transmission electron microscopy reveal phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002 degrees). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized using intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have 2 in-plane orientations: [1120] BiFeO3 || [1120] GaN (SiC) plus a twin variant related by a 180 degrees in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with high bandgap semiconductors is an important step toward novel field-effect devices.

Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

KAUST Repository

Yao, Yingbang

2014-02-01

Multiferroic BiFeO3-(K0.5Na0.5) 0.4(Sr0.6Ba0.4)0.8Nb 2O6 (BFO-KNSBN) trilayer thin films, were epitaxially grown on MgO(0 0 1) and SrTiO3(0 0 1) by using pulsed laser deposition (PLD). Their ferroelectric, magnetic, dielectric and optical properties were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis magnetic loop was observed in the KNSBN-BFO-KNSBN trilayer films, where exchange bias and secondary phase in the BFO layer played crucial roles. Interactions between adjacent layers were revealed by temperature-dependent Raman spectroscopic measurements. © 2013 Elsevier B.V. All rights reserved.

Synchrotron X-ray studies of epitaxial ferroelectric thin films and nanostructures

Science.gov (United States)

Klug, Jeffrey A.

The study of ferroelectric thin films is a field of considerable scientific and technological interest. In this dissertation synchrotron x-ray techniques were applied to examine the effects of lateral confinement and epitaxial strain in ferroelectric thin films and nanostructures. Three materials systems were investigated: laterally confined epitaxial BiFeO3 nanostructures on SrTiO3 (001), ultra-thin commensurate SrTiO 3 films on Si (001), and coherently strained films of BaTiO3 on DyScO3 (110). Epitaxial films of BiFeO3 were deposited by radio frequency magnetron sputtering on SrRuO3 coated SrTiO 3 (001) substrates. Laterally confined nanostructures were fabricated using focused ion-beam processing and subsequently characterized with focused beam x-ray nanodiffraction measurements with unprecedented spatial resolution. Results from a series of rectangular nanostructures with lateral dimensions between 500 nm and 1 mum and a comparably-sized region of the unpatterned BiFeO3 film revealed qualitatively similar distributions of local strain and lattice rotation with a 2-3 times larger magnitude of variation observed in those of the nanostructures compared to the unpatterned film. This indicates that lateral confinement leads to enhanced variation in the local strain and lattice rotation fields in epitaxial BiFeO3 nanostructures. A commensurate 2 nm thick film of SrTiO3 on Si was characterized by the x-ray standing wave (XSW) technique to determine the Sr and Ti cation positions in the strained unit cell in order to verify strain-induced ferroelectricity in SrTiO3/Si. A Si (004) XSW measurement at 10°C indicated that the average Ti displacement from the midpoint between Sr planes was consistent in magnitude to that predicted by a density functional theory (DFT) calculated ferroelectric structure. The Ti displacement determined from a 35°C measurement better matched a DFT-predicted nonpolar structure. The thin film extension of the XSW technique was employed to

Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

Science.gov (United States)

Zhou, Xiaolan

Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

On the room temperature multiferroic BiFeO3: magnetic, dielectric and thermal properties

Science.gov (United States)

Lu, J.; Günther, A.; Schrettle, F.; Mayr, F.; Krohns, S.; Lunkenheimer, P.; Pimenov, A.; Travkin, V. D.; Mukhin, A. A.; Loidl, A.

2010-06-01

Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at mm-wavelengths, as well as ferroelectric polarization are reported for single crystalline BiFeO3. A well developed anomaly in the magnetic susceptibility signals the onset of antiferromagnetic order close to 635 K. Beside this anomaly no further indications of phase or glass transitions are indicated in the magnetic dc and ac susceptibilities down to the lowest temperatures. The heat capacity has been measured from 2 K up to room temperature and significant contributions from magnon excitations have been detected. From the low-temperature heat capacity an anisotropy gap of the magnon modes of the order of 6 meV has been determined. The dielectric constants measured in standard two-point configuration are dominated by Maxwell-Wagner like effects for temperatures T > 300 K and frequencies below 1 MHz. At lower temperatures the temperature dependence of the dielectric constant and loss reveals no anomalies outside the experimental errors, indicating neither phase transitions nor strong spin phonon coupling. The temperature dependence of the dielectric constant was measured contact free at microwave frequencies. At room temperature the dielectric constant has an intrinsic value of 53. The loss is substantial and strongly frequency dependent indicating the predominance of hopping conductivity. Finally, in small thin samples we were able to measure the ferroelectric polarization between 10 and 200 K. The saturation polarization is of the order of 40 μC/cm2, comparable to reports in literature.

Crystal structure and Mössbauer effect in multiferroic 0.5BiFeO3-0.5Pb(Fe0.5Ta0.5O3 solid solution

Directory of Open Access Journals (Sweden)

Stoch Agata

2017-06-01

Full Text Available Multiferroic 0.5BiFeO3-0.5Pb(Fe0.5Ta0.5O3 solid solution is a material that exhibits ferroelectric and antiferromagnetic orderings in ambient temperature. The solid solution was obtained as a result of a conventional reaction in a solid state. The obtained material is a dense, fine-grained sinter whose surface was observed by scanning electron microscopy (SEM and stoichiometry was confirmed by energy dispersive X-ray spectroscopic (EDS analysis. According to the X-ray powder diffraction (XRD measurements, the main phase is R3c space group with admixture of Pm-3m regular phase. Small contribution of pyrochlore-like phase was also observed. Mössbauer spectroscopy suggested random distribution of Fe3+/Ta5+ cations in the B sites of ABO3 compound. Reduction of the magnetic hyperfine field with an increase in the substitution of Ta5+ in Fe3+ neighbourhood was also observed.

Local and average structure of Mn- and La-substituted BiFeO3

Science.gov (United States)

Jiang, Bo; Selbach, Sverre M.

2017-06-01

The local and average structure of solid solutions of the multiferroic perovskite BiFeO3 is investigated by synchrotron X-ray diffraction (XRD) and electron density functional theory (DFT) calculations. The average experimental structure is determined by Rietveld refinement and the local structure by total scattering data analyzed in real space with the pair distribution function (PDF) method. With equal concentrations of La on the Bi site or Mn on the Fe site, La causes larger structural distortions than Mn. Structural models based on DFT relaxed geometry give an improved fit to experimental PDFs compared to models constrained by the space group symmetry. Berry phase calculations predict a higher ferroelectric polarization than the experimental literature values, reflecting that structural disorder is not captured in either average structure space group models or DFT calculations with artificial long range order imposed by periodic boundary conditions. Only by including point defects in a supercell, here Bi vacancies, can DFT calculations reproduce the literature results on the structure and ferroelectric polarization of Mn-substituted BiFeO3. The combination of local and average structure sensitive experimental methods with DFT calculations is useful for illuminating the structure-property-composition relationships in complex functional oxides with local structural distortions.

Superior Properties of Energetically Stable La2/3Sr1/3MnO3/Tetragonal BiFeO3 Multiferroic Superlattices

KAUST Repository

Feng, Nan; Mi, Wenbo; Wang, Xiaocha; Cheng, Yingchun; Schwingenschlö gl, Udo

2015-01-01

The superlattice of energetically stable La2/3Sr1/3MnO3 and tetragonal BiFeO3 is investigated by means of density functional theory. The superlattice as a whole exhibits a half-metallic character, as is desired for spintronic devices. The interfacial electronic states and exchange coupling are analyzed in details. We demonstrate that the interfacial O atoms play a key role in controlling the coupling. The higher ferroelectricity of tetragonal BiFeO3 and stronger response to the magnetic moment in La2/3Sr1/3MnO3/BiFeO3 superlattice show a strongly enhanced electric control of the magnetism as compared to the rhombohedral one. Therefore, it is particularly practical interest in the magnetoelectric controlled spintronic devices.

Superior Properties of Energetically Stable La2/3Sr1/3MnO3/Tetragonal BiFeO3 Multiferroic Superlattices

KAUST Repository

Feng, Nan

2015-04-30

The superlattice of energetically stable La2/3Sr1/3MnO3 and tetragonal BiFeO3 is investigated by means of density functional theory. The superlattice as a whole exhibits a half-metallic character, as is desired for spintronic devices. The interfacial electronic states and exchange coupling are analyzed in details. We demonstrate that the interfacial O atoms play a key role in controlling the coupling. The higher ferroelectricity of tetragonal BiFeO3 and stronger response to the magnetic moment in La2/3Sr1/3MnO3/BiFeO3 superlattice show a strongly enhanced electric control of the magnetism as compared to the rhombohedral one. Therefore, it is particularly practical interest in the magnetoelectric controlled spintronic devices.

Electronic conduction in doped multiferroic BiFeO3

Science.gov (United States)

Yang, Chan-Ho; Seidel, Jan; Kim, Sang-Yong; Gajek, M.; Yu, P.; Holcomb, M. B.; Martin, L. W.; Ramesh, R.; Chu, Y. H.

2009-03-01

Competition between multiple ground states, that are energetically similar, plays a key role in many interesting material properties and physical phenomena as for example in high-Tc superconductors (electron kinetic energy vs. electron-electron repulsion), colossal magnetoresistance (metallic state vs. charge ordered insulating state), and magnetically frustrated systems (spin-spin interactions). We are exploring the idea of similar competing phenomena in doped multiferroics by control of band-filling. In this paper we present systematic investigations of divalent Ca doping of ferroelectric BiFeO3 in terms of structural and electronic conduction properties as well as diffusion properties of oxygen vacancies.

Enhancement of switching speed of BiFeO3 capacitors by magnetic fields

Directory of Open Access Journals (Sweden)

E. J. Guo

2014-09-01

Full Text Available The effect of a magnetic field on the ferroelectric switching kinetics of BiFeO3 (BFO capacitors with La0.8Ca0.2MnO3 (LCMO bottom electrode and Pt top contact has been investigated. We find a strong dependence of the remnant polarization and coercive field on the magnetic field. The switching time can be systematically tuned by magnetic field and reaches a tenfold reduction around the Curie temperature of LCMO at 4 T. We attribute this behavior to the splitting of the voltage drops across the BFO film and the LCMO bottom electrode, which can be strongly influenced by an external magnetic field due to the magnetoresistance. Further experiments on the BFO capacitors with SrRuO3 bottom electrodes show little magnetic field dependence of ferroelectric switching confirming our interpretation. Our results provide an efficient route to control the ferroelectric switching speed through the magnetic field, implying potential application in multifunctional devices.

Effects of magnetic annealing on structure and multiferroic properties of pure and dysprosium substituted BiFeO 3

KAUST Repository

Zhang, Shuxia; Yao, Yingbang; Chen, Yao; Wang, Dongliang; Zhang, Xianping; Awaji, Satoshi; Watanabe, Kazuo; Ma, Yanwei

2012-01-01

In this work, the effects of magnetic annealing on crystal structure and multiferroic properties of BiFeO 3 and Bi 0.85Dy 0.15FeO 3 have been investigated. It is found that the X-ray diffraction patterns of pure BiFeO 3 samples are obviously broadened after magnetic annealing, whereas those of Bi 0.85Dy 0.15FeO 3 samples are almost unchanged. Magnetic field annealing did not affect the magnetic properties of these two kinds of samples much. However, ferroelectric properties of the two materials exhibited different behaviors after magnetic field annealing. For pure BiFeO 3 samples, the remnant polarizations (P r) are suppressed; in contrast, for Bi 0.85Dy 0.15FeO 3 samples, P r is greatly enhanced. Possible mechanisms for the effects of magnetic field annealing have been discussed. © 2012 Elsevier B.V. All rights reserved.

Effects of magnetic annealing on structure and multiferroic properties of pure and dysprosium substituted BiFeO 3

KAUST Repository

Zhang, Shuxia

2012-07-01

In this work, the effects of magnetic annealing on crystal structure and multiferroic properties of BiFeO 3 and Bi 0.85Dy 0.15FeO 3 have been investigated. It is found that the X-ray diffraction patterns of pure BiFeO 3 samples are obviously broadened after magnetic annealing, whereas those of Bi 0.85Dy 0.15FeO 3 samples are almost unchanged. Magnetic field annealing did not affect the magnetic properties of these two kinds of samples much. However, ferroelectric properties of the two materials exhibited different behaviors after magnetic field annealing. For pure BiFeO 3 samples, the remnant polarizations (P r) are suppressed; in contrast, for Bi 0.85Dy 0.15FeO 3 samples, P r is greatly enhanced. Possible mechanisms for the effects of magnetic field annealing have been discussed. © 2012 Elsevier B.V. All rights reserved.

Tuning the competition between ferromagnetism and antiferromagnetism in a half-doped manganite through magnetoelectric coupling

Energy Technology Data Exchange (ETDEWEB)

Yi, Di [University of California; Liu, Jian [University of California, Berkeley & LBNL; Okamoto, Satoshi [ORNL; Jagannatha, Suresha [Lawrence Berkeley National Laboratory (LBNL); Chen, Yi-Chun [National Cheng Kung University, Tainan, Taiwan; Yu, Pu [Tsinghua University; Chu, Ying-Hao [National Chiao Tung University, Hsinchu, Taiwan; Arenholz, Elke [Lawrence Berkeley National Laboratory (LBNL); Ramesh, Ramamoorthy [University of California, Berkeley

2013-01-01

We investigate the possibility of controlling the magnetic phase transition of the heterointerface between a half-doped manganite La0:5Ca0:5MnO3 and a multiferroic BiFeO3 (BFO) through magnetoelectric coupling. Using macroscopic magnetometry and element-selective x-ray magnetic circular dichroism at the Mn and Fe L edges, we discover that the ferroelectric polarization of BFO controls simultaneously the magnetization of BFO and La0.5Ca0.5MnO3 (LCMO). X-ray absorption spectra at the oxygen K edge and linear dichroism at the Mn L edge suggest that the interfacial coupling is mainly derived from the superexchange between Mn and Fe t2g spins. The combination of x-ray absorption spectroscopy and mean-field theory calculations reveals that the d-electron modulation of Mn cations changes the magnetic coupling in LCMO, which controls the enhanced canted moments of interfacial BFO via the interfacial coupling. Our results demonstrate that the competition between ferromagnetic and antiferromagnetic instability can be modulated by an electric field at the heterointerface, providing another pathway for the electrical field control of magnetism.

Magnetic and ferroelectric characteristics of Gd 3 and Ti 4 co-doped ...

Indian Academy of Sciences (India)

2016-08-26

Aug 26, 2016 ... Home; Journals; Bulletin of Materials Science; Volume 39; Issue 2. Magnetic and ferroelectric characteristics of Gd3+ and ... X-ray powder diffraction (XRD) results confirmed the presence of a significant amount of Bi2Fe4O9 impurity phase in the undoped BiFeO3 sample. Mössbauer spectroscopy studies ...

Optical spectroscopic study of multiferroic BiFeO3 and LuFe2O4

Science.gov (United States)

Xu, Xiaoshan

2010-03-01

Iron-based multiferroics such as BiFeO3 and LuFe2O4 exhibit the highest magnetic and ferroelectric ordering temperatures among known multiferroics. LuFe2O4 is a frustrated system with several phase transitions that result in electronically driven multiferroicity. To understand how this peculiar multiferroic mechanism correlates with magnetism, we studied electronic excitations by optical spectroscopy and other complementary techniques. We show that the charge order, which determines the dielectric properties, is due to the ``order by fluctuation'' mechanism, evidenced by the onset of charge fluctuation well below the charge ordering transition. We also find a low temperature monoclinic distortion driven by both temperature and magnetic field, indicating strong coupling between structure, magnetism and charge order. BiFeO3 is the only known single phase multiferroics with room temperature magnetism and ferroelectricity. To investigate the spin-charge coupling, we measured the optical properties of BiFeO3. We find that the absorption onset occurs due to on-site Fe^3+ excitations at 1.41 and 1.90 eV. Temperature and magnetic-field-induced spectral changes reveal complex interactions between on-site crystal-field and magnetic excitations in the form of magnon sidebands. The sensitivity of the magnon sidebands allows us to map out the magnetic-field temperature phase diagram which demonstrates optical evidence for spin spiral quenching above 20 T and suggests a spin domain reorientation near 10 T. Work done in collaboration with T.V. Brinzari, R.C. Rai, M. Angst, R.P. Hermann, A.D. Christianson, J.-W. Kim, Z. Islam, B.C. Sales, D. Mandrus, S. Lee, Y.H. Chu, L. W. Martin, A. Kumar, R. Ramesh, S.W. Cheong, S. McGill, and J.L. Musfeldt.

Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates

Science.gov (United States)

Shin, Hyun Wook; Son, Jong Yeog

2017-12-01

Multiferroic BiFeO3 (BFO) thin films and nanodots are deposited on highly oriented pyrolytic graphite (HOPG) substrates via a pulsed laser deposition technique, where the HOPG surface has a honeycomb lattice structure made of carbon atoms, similar to graphene. A graphene/BFO/HOPG capacitor exhibited multiferroic properties, namely ferroelectricity (a residual polarization of 26.8 μC/cm2) and ferromagnetism (a residual magnetization of 1.1 × 10-5 emu). The BFO thin film had high domain wall energies and demonstrated switching time of approximately 82 ns. An 8-nm BFO nanodot showed a typical piezoelectric hysteresis loop with an effective residual piezoelectric constant of approximately 110 pm/V and exhibited two clearly separated current curves depending on the ferroelectric polarization direction.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures (Postprint)

Science.gov (United States)

2016-09-01

deformation potentially leads to fatigue and fracture over time. Moreover, we show that by simply applying voltage pulses, a robust, non-volatile...polarization such as PZT , BiFeO3, or doped HfO2. Our results thus provide a pathway towards ferroelectric switching of magnetism that could be useful for

Magnetization manipulation in multiferroic devices.

Science.gov (United States)

Gajek, Martin; Martin, Lane; Hao Chu, Ying; Huijben, Mark; Barry, Micky; Ramesh, Ramamoorthy

2008-03-01

Controlling magnetization by purely electrical means is a a central topic in spintronics. A very recent route towards this goal is to exploit the coupling between multiple ferroic orders which coexist in multiferroic materials. BiFeO3 (BFO) displays antiferromagnetic and ferroelectric orderings at room temperature and can thus be used as an electrically controllable pinning layer for a ferromagnetic electrode. Furthermore BFO remains ferroelectric down to 2nm and can therefore be integrated as a tunnel barrier in MTJ's. We will describe these two architecture schemes and report on our progresses towards the control of magnetization via the multiferroic layer in those structures.

Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films

International Nuclear Information System (INIS)

Kim, D J; Gruverman, A; Connell, J G; Seo, S S A

2016-01-01

Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO 3 and Pb(Zr,Ti)O 3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO 3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO 3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects. (paper)

Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate

International Nuclear Information System (INIS)

Leontyev, I N; Janolin, P-E; Dkhil, B; Yuzyuk, Yu I; El-Marssi, M; Chernyshov, D; Dmitriev, V; Golovko, Yu I; Mukhortov, V M

2011-01-01

A Nd-doped BiFeO 3 thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45 0 with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

Multiferroic properties of nanocrystalline BiFe1−xNixO3 (x=0.0–0.15) perovskite ceramics

International Nuclear Information System (INIS)

Chaudhari, Yogesh; Mahajan, Chandrashekhar M.; Singh, Amrita; Jagtap, Prashant; Chatterjee, Ratnamala; Bendre, Subhash

2015-01-01

Ni doped BiFeO 3 (x=0, 0.05, 0.1 and 0.15) nanocrystalline ceramics were synthesized by the solution combustion method (SCM) to obtain optimal multiferroic properties. The effect of Ni doping on structural, morphological, ferroelectric, magnetic and dielectric properties of BiFeO 3 was studied. The structural investigations by using X-ray diffraction (XRD) pattern confirmed that BiFe 1−x Ni x O 3 ceramics have rhombhohedral perovskite structure. The ferroelectric hysteresis measurements for BiFe 1−x Ni x O 3 (x=0, 0.05, 0.1, 0.15) compound at room temperature found to exhibit unsaturated behavior and presents partial reversal of polarization. The magnetic measurements demonstrated an enhancement of ferromagnetic property due to Ni doping in BiFeO 3 when compared with undoped BiFeO 3 . The variation of dielectric constant with temperature in BiFe 0.9 Ni 0.1 O 3 and BiFe 0.85 Ni 0.15 O 3 samples evidenced an apparent dielectric anomaly around 350 °C and 300 °C which corresponds to antiferromagnetic to paramagnetic phase transition of (T N ) of BiFeO 3 . The dependence of room temperature dielectric properties on frequency signifies that both dielectric constant (ε) and dielectric loss (tan δ) are the strong function of frequency. The results show that solution combustion method leads to synthesis of an excellent and reproducible BiFe 1−x Ni x O 3 multiferroic ceramics. - Highlights: • Synthesis of BiFe 1−x Ni x O 3 (x=0, 0.05, 0.1 and 0.15) multiferroic ceramics. • Solution Combustion Method (SCM). • Ferroelectric and dielectric properties of undoped and Ni doped BiFeO 3 ceramics. • High temperature synthesis of BiFe 1−x Ni x O 3 multiferroic ceramics. • First detailed report about SCM synthesized the BiFe 1−x Ni x O 3 ceramics

Analogies between antiferromagnets and antiferroelectrics

International Nuclear Information System (INIS)

Enz, C.P.; Matthias, B.T.

1980-01-01

Ferro- and antiferromagnetism in the Laves phase TiBesub(2-x) Cusub(x) occurs for 0.1 4 H 2 PO 4 and its solid solutions with TlH 2 PO 4 and with the ferroelectric KH 2 PO 4 are discussed as function of deuteration and of pressure. Another analogy as function of pressure is established with the antiferroelectric perovskite PbZrO 3 . (author)

Coexisting exchange bias effect and ferroelectricity in geometrically frustrated ZnCr2O4

Science.gov (United States)

Dey, J. K.; Majumdar, S.; Giri, S.

2018-06-01

Concomitant occurrence of exchange bias effect and ferroelectric order is revealed in antiferromagnetic spinel ZnCr2O4. The exchange bias effect is observed below antiferromagnetic Neél temperature (T N) with a reasonable value of exchange bias field ( Oe at 2 K). Intriguingly, the ratio is found unusually high as  ∼2.2, where H C is the coercivity. This indicates that large H C is not always primary for obtaining large exchange bias effect. Ferroelectric order is observed at T N, where non-centrosymmetric magnetic structure with space group associated with the magnetoelectric coupling correlates the ferroelectric order, proposing that, ZnCr2O4 is an improper multiferroic material. Rare occurrence of exchange bias effect and ferroelectric order in ZnCr2O4 attracts the community for fundamental interest and draws special attention in designing new materials for possible electric field control of exchange bias effect.

Electrical conduction at domain walls in multiferroic BiFeO3

Science.gov (United States)

Seidel, Jan; Martin, Lane; He, Qing; Zhan, Qian; Chu, Ying-Hao; Rother, Axel; Hawkridge, Michael; Maksymovych, Peter; Yu, Pu; Gajek, Martin; Balke, Nina; Kalinin, Sergei; Gemming, Sybille; Wang, Feng; Catalán, Gustau; Scott, James; Spaldin, Nicola; Orenstein, Joseph; Ramesh, Ramamoorthy

2009-03-01

We report the observation of room temperature electronic conductivity at ferroelectric domain walls in BiFeO3. The origin and nature of the observed conductivity is probed using a combination of conductive atomic force microscopy, high resolution transmission electron microscopy and first-principles density functional computations. We show that a structurally driven change in both the electrostatic potential and local electronic structure (i.e., a decrease in band gap) at the domain wall leads to the observed electrical conductivity. We estimate the conductivity in the wall to be several orders of magnitude higher than for the bulk material. Additionally we demonstrate the potential for device applications of such conducting nanoscale features.

Ferroelectric BiFeO3as an Oxide Dye in Highly Tunable Mesoporous All-Oxide Photovoltaic Heterojunctions

KAUST Repository

Wang, Lingfei; Ma, He; Chang, Lei; Ma, Chun; Yuan, Guoliang; Wang, Junling; Wu, Tao

2016-01-01

As potential photovoltaic materials, transition-metal oxides such as BiFeO3 (BFO) are capable of absorbing a substantial portion of solar light and incorporating ferroic orders into solar cells with enhanced performance. But the photovoltaic

Non-volatile memory based on the ferroelectric photovoltaic effect

Science.gov (United States)

Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

2013-01-01

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

Tetragonal BiFeO3 on yttria-stabilized zirconia

International Nuclear Information System (INIS)

Liu, Heng-Jui; Du, Yu-Hao; Gao, Peng; Ikuhara, Yuichi; Huang, Yen-Chin; Chen, Yi-Chun; Chen, Hsiao-Wen; Liu, Hsiang-Lin; He, Qing; Chu, Ying-Hao

2015-01-01

High structural susceptibility of multiferroic BiFeO 3 (BFO) makes it a potential replacement of current Pb-based piezoelectrics. In this study, a tetragonal phase is identified based on a combination of x-ray diffraction, scanning transmission electronic microscopy, x-ray absorption spectroscopy, and Raman spectroscopy when BFO is grown on yttria-stabilized zirconia (YSZ) substrates. To distinguish the discrepancy between this tetragonal phase and common cases of monoclinic BFO, piezoelectric force microscopy images and optical property are also performed. It shows a lower electrostatic energy of ferroelectric domains and a large reduction of band gap for BFO grown on YSZ substrate comparing to the well-known one grown on LaAlO 3 substrate. Our findings in this work can provide more insights to understand the structural diversity of multiferroic BFO system for further applications

First-principles approach to the dynamic magnetoelectric couplings for the non-reciprocal directional dichroism in BiFeO3

International Nuclear Information System (INIS)

Lee, Jun Hee; Fishman, Randy S; Kézsmáki, István

2016-01-01

Due to the complicated magnetic and crystallographic structures of BiFeO 3 , its magnetoelectric (ME) couplings and microscopic model Hamiltonian remain poorly understood. By employing a first-principles approach, we uncover all possible ME couplings associated with the spin-current (SC) and exchange-striction (ES) polarizations, and construct an appropriate Hamiltonian for the long-range spin-cycloid in BiFeO 3 . First-principles calculations are used to understand the microscopic origins of the ME couplings. We find that inversion symmetries broken by ferroelectric and antiferroelectric distortions induce the SC and the ES polarizations, which cooperatively produce the dynamic ME effects in BiFeO 3 . A model motivated by first principles reproduces the absorption difference of counter-propagating light beams called non-reciprocal directional dichroism. The current paper focuses on the spin-driven (SD) polarizations produced by a dynamic electric field, i.e. the dynamic ME couplings. Due to the inertial properties of Fe, the dynamic SD polarizations differ significantly from the static SD polarizations. Our systematic approach can be generally applied to any multiferroic material, laying the foundation for revealing hidden ME couplings on the atomic scale and for exploiting optical ME effects in the next generation of technological devices such as optical diodes. (paper)

Magnetic Field Control of Cycloidal Domains and Electric Polarization in Multiferroic BiFeO3

Science.gov (United States)

Bordács, S.; Farkas, D. G.; White, J. S.; Cubitt, R.; DeBeer-Schmitt, L.; Ito, T.; Kézsmárki, I.

2018-04-01

The magnetic field induced rearrangement of the cycloidal spin structure in ferroelectric monodomain single crystals of the room-temperature multiferroic BiFeO3 is studied using small-angle neutron scattering. The cycloid propagation vectors are observed to rotate when magnetic fields applied perpendicular to the rhombohedral (polar) axis exceed a pinning threshold value of ˜5 T . In light of these experimental results, a phenomenological model is proposed that captures the rearrangement of the cycloidal domains, and we revisit the microscopic origin of the magnetoelectric effect. A new coupling between the magnetic anisotropy and the polarization is proposed that explains the recently discovered magnetoelectric polarization perpendicular to the rhombohedral axis.

Relation between ferroelectric and antiferromagnetic order in RMn2O5

International Nuclear Information System (INIS)

Noda, Yukio; Kimura, Hiroyuki; Kamada, Youichi; Osawa, Toshihiro; Fukuda, Yosikazu; Ishikawa, Yoshihisa; Kobayashi, Satoru; Wakabayashi, Yusuke; Sawa, Hiroshi; Ikeda, Naoshi; Kohn, Kay

2006-01-01

RMn 2 O 5 (R=Y and rare earth) shows successive magnetic and ferroelectric phase transitions at about 45, 40, 39, 20 and 10K. We have reinvestigated the magnetic structure of YMn 2 O 5 at the commensurate phase (T=25K) using a single crystal four-circle diffractometer in order to discuss the mechanism of magnetoelectric interaction and the origin of ferroelectricity. We also observed the lattice modulation vectors (q L ) to compare the magnetic propagation vectors (q M ) by synchrotron X-ray diffraction. Improved magnetic structure data are compared with the theory recently proposed

Giant Polarization Rotation in BiFeO3/SrTiO3 Thin Films.

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Langner, M. C.; Chu, Y. H.; Martin, L. M.; Gajek, M.; Ramesh, R.; Orenstein, J.

2008-03-01

We use optical second harmonic generation to probe dynamics of the ferroelectric polarization in (111) oriented BiFeO3 thin films grown on SrTiO3 substrates. The second harmonic response indicates 3m point group symmetry and is consistent with a spontaneous polarization normal to the surface of the film. We measure large changes in amplitude and lowering of symmetry, consistent with polarization rotation, when modest electric fields are applied in the plane of the film. At room temperature the rotation is an order of magnitude larger than expected from reported values of the dielectric constant and increases further (as 1/T) as temperature is lowered. We propose a substrate interaction model to explain these results.

Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Puli, Venkata Sreenivas; Chrisey, Douglas B; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Misra, Pankaj; Scott, J F; Katiyar, Ram S; Coondoo, Indrani; Panwar, Neeraj

2014-01-01

We report photovoltaic (PV) effect in multiferroic Bi 0.9 Sm 0.1 Fe 0.95 Co 0.05 O 3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (V oc ) and the short-circuit current density (J sc ) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm −2 . Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. (paper)

Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

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Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin-Seok; Yoon, Jong-Gul; Chen, Long-Qing; Yang, Sang Mo; Noh, Tae Won

2018-05-01

Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip3,4. However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

Enhanced Photocurrent in BiFeO3 Materials by Coupling Temperature and Thermo-Phototronic Effects for Self-Powered Ultraviolet Photodetector System.

Science.gov (United States)

Qi, Jia; Ma, Nan; Ma, Xiaochen; Adelung, Rainer; Yang, Ya

2018-04-25

Ferroelectric materials can be utilized for fabricating photodetectors because of the photovoltaic effect. Enhancing the photovoltaic performance of ferroelectric materials is still a challenge. Here, a self-powered ultraviolet (UV) photodetector is designed based on the ferroelectric BiFeO 3 (BFO) material, exhibiting a high current/voltage response to 365 nm light in heating/cooling states. The photovoltaic performance of the BFO-based device can be well modulated by applying different temperature variations, where the output current and voltage can be enhanced by 60 and 75% in heating and cooling states, respectively. The enhancement mechanism of the photocurrent is associated with both temperature effect and thermo-phototronic effect in the photovoltaic process. Moreover, a 4 × 4 matrix photodetector array has been designed for detecting the 365 nm light distribution in the cooling state by utilizing photovoltage signals. This study clarifies the role of the temperature effect and the thermo-phototronic effect in the photovoltaic process of the BFO material and provides a feasible route for pushing forward practical applications of self-powered UV photodetectors.

Excitation of spin waves in BiFeO3 multiferroic film by the slot line transducer

Science.gov (United States)

Korneev, V. I.; Popkov, A. F.; Solov'yov, S. V.

2018-01-01

Analysis of the efficiency of magnetoelectric excitation of spin-waves in BiFeO3 multiferroic films by a slot line is performed based on the solution of dynamic Ginzburg-Landau equations for the antiferromagnetic vector. The excitation efficiency is determined by the magnitude of the conversion coefficient of the electromagnetic wave to the spin wave by the slot line transducer or in other words, losses on conversion in the slot line. Calculations are made for a homogeneous antiferromagnetic state of the multiferroic in the presence of a sufficiently large magnetic field and for a spatially modulated spin state (SMSS) at zero magnetic field. It is shown that in the case of a homogeneous antiferromagnetic state, the losses on the excitation of spin waves exceed the excitation efficiency in the SMSS state; however, as the frequency approaches the spin excitation gap, it falls and becomes lower than in the SMSS state. Spin wave excitation in the presence of antiferromagnetic cycloid strongly depends on the relation of the slot width of the transducer to the cycloid periodicity and on the magnitude of the shift of the position of the transducer along the cycloid on its period. The usage of multiferroics for delay lines in the considered frequency range from 100 to 600 GHz requires significant reduction in conversion and propagation losses. More promising seems multiferroic usage in phase shifters and switches for this range.

Electric-field control of spin waves in multiferroic BiFeO3: Theory

Science.gov (United States)

de Sousa, Rogério; Rovillain, P.; Gallais, Y.; Sacuto, A.; Méasson, M. A.; Colson, D.; Forget, A.; Bibes, M.; Barthélémy, A.; Cazayous, M.

2011-03-01

Our recent experiment demonstrated gigantic (30%) electric-field tuning of magnon frequencies in multiferroic BiFeO3. We demonstrate that the origin of this effect is related to two linear magnetoelectric interactions that couple the component of electric field perpendicular to the ferroelectric vector to a quadratic form of the Néel vector. We calculate the magnon spectra due to each of these interactions and show that only one of them is consistent with experimental data. At high electric fields, this interaction induces a phase transition to a homogeneous state, and the multi-magnon spectra will fuse into two magnon frequencies. We discuss the possible microscopic mechanisms responsible for this novel interaction and the prospect for applications in magnonics. We acknowledge support from NSERC-Discovery (Canada) and the Agence Nationale pour la Recherche (France).

Electric field control of magnetism using BiFeO3-based heterostructures

International Nuclear Information System (INIS)

Heron, J. T.; Schlom, D. G.; Ramesh, R.

2014-01-01

Conventional CMOS based logic and magnetic based data storage devices require the shuttling of electrons for data processing and storage. As these devices are scaled to increasingly smaller dimensions in the pursuit of speed and storage density, significant energy dissipation in the form of heat has become a center stage issue for the microelectronics industry. By taking advantage of the strong correlations between ferroic orders in multiferroics, specifically the coupling between ferroelectric and magnetic orders (magnetoelectricity), new device functionalities with ultra-low energy consumption can be envisioned. In this article, we review the advances and highlight challenges toward this goal with a particular focus on the room temperature magnetoelectric multiferroic, BiFeO 3 , exchange coupled to a ferromagnet. We summarize our understanding of the nature of exchange coupling and the mechanisms of the voltage control of ferromagnetism observed in these heterostructures

Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

KAUST Repository

Yao, Yingbang

2012-12-28

Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar or bipolar poling with various applied electric fields. The effects of polarization relaxation and fatigue on the currents were also investigated. We found that the conduction currents and the associated rectifications were controlled by the amplitude and direction of the polarization. We clearly observed the linear dependence of the current on the polarization. It is suggested that the space-charge-limited conduction and the charge injection at the Schottky interface between the film and the electrodes dominate the current. The electrically controlled rectifying behaviour observed in this study may be useful in nonvolatile resistance memory devices or tunable diodes. © 2013 IOP Publishing Ltd.

Structural transitions and multiferroic properties of high Ni-doped BiFeO3

Science.gov (United States)

Betancourt-Cantera, L. G.; Bolarín-Miró, A. M.; Cortés-Escobedo, C. A.; Hernández-Cruz, L. E.; Sánchez-De Jesús, F.

2018-06-01

Nickel doped bismuth ferrite powders, BiFe1-x NixO3 (0 ≤ x ≤ 0.5), were synthesized by high-energy ball milling followed by an annealing at 700 °C. A detailed study about the substitution of Fe3+ by Ni2+ on the crystal structure and multiferroic properties is presented. The X-ray diffraction patterns reveal the formation of rhombohedral structure with small amounts of Bi2Fe4O9 as a secondary phase for x behavior indicates the frustration of the G-antiferromagnetic order typical of the un-doped BiFeO3, caused by the presence of small amounts of Ni2+ (x Behavior modifications of electrical conductivity, permittivity and dielectric loss versus frequency are related with crystal structure transformations, when nickel concentration is increased.

Dielectric and piezoelectric properties of BiFeO3 modified Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

International Nuclear Information System (INIS)

Zhou Changrong; Liu Xinyu; Li Weizhou

2008-01-01

The (0.82 - x)Bi 0.5 Na 0.5 TiO 3 -0.18Bi 0.5 K 0.5 TiO 3 -xBiFeO 3 (x = 0-0.07) lead-free piezoelectric ceramics were fabricated by a conventional solid-state reaction method and the effect of BiFeO 3 addition on microstructure and electrical properties of the ceramics was investigated. The specimens with x ≤ 0.05 maintained a rhombohedral-tetragonal phase coexistence and changed into a rhombohedral phase when x > 0.05 in crystal structure. The addition of BiFeO 3 caused a promoted grain growth. All the specimens reveal a low-frequency dielectric dispersion in the frequency range of 40-1 MHz. The piezoelectric constant d 33 and the electromechanical coupling factor k p show an obvious improvement by the addition of small amount of BiFeO 3 , which shows optimum values of d 33 = 170 pC/N and k p = 0.366 at x = 0.03. Contrary to the enhancement of piezoelectric properties, Q m decreases with increasing BiFeO 3 content. The mechanisms of intrinsic and extrinsic contributions to the dielectric and piezoelectric responses have been proposed. Intrinsic contributions are from the relative ion/cation shift that preserves the ferroelectric crystal structure. The remaining extrinsic contributions are from the domain-wall motion and point defects

TOPICAL REVIEW: First principles studies of multiferroic materials

Science.gov (United States)

Picozzi, Silvia; Ederer, Claude

2009-07-01

Multiferroics, materials where spontaneous long-range magnetic and dipolar orders coexist, represent an attractive class of compounds, which combine rich and fascinating fundamental physics with a technologically appealing potential for applications in the general area of spintronics. Ab initio calculations have significantly contributed to recent progress in this area, by elucidating different mechanisms for multiferroicity and providing essential information on various compounds where these effects are manifestly at play. In particular, here we present examples of density-functional theory investigations for two main classes of materials: (a) multiferroics where ferroelectricity is driven by hybridization or purely structural effects, with BiFeO3 as the prototype material, and (b) multiferroics where ferroelectricity is driven by correlation effects and is strongly linked to electronic degrees of freedom such as spin-, charge-, or orbital-ordering, with rare-earth manganites as prototypes. As for the first class of multiferroics, first principles calculations are shown to provide an accurate qualitative and quantitative description of the physics in BiFeO3, ranging from the prediction of large ferroelectric polarization and weak ferromagnetism, over the effect of epitaxial strain, to the identification of possible scenarios for coupling between ferroelectric and magnetic order. For the second class of multiferroics, ab initio calculations have shown that, in those cases where spin-ordering breaks inversion symmetry (e.g. in antiferromagnetic E-type HoMnO3), the magnetically induced ferroelectric polarization can be as large as a few µC cm-2. The examples presented point the way to several possible avenues for future research: on the technological side, first principles simulations can contribute to a rational materials design, aimed at identifying spintronic materials that exhibit ferromagnetism and ferroelectricity at or above room temperature. On the

First principles studies of multiferroic materials

International Nuclear Information System (INIS)

Picozzi, Silvia; Ederer, Claude

2009-01-01

Multiferroics, materials where spontaneous long-range magnetic and dipolar orders coexist, represent an attractive class of compounds, which combine rich and fascinating fundamental physics with a technologically appealing potential for applications in the general area of spintronics. Ab initio calculations have significantly contributed to recent progress in this area, by elucidating different mechanisms for multiferroicity and providing essential information on various compounds where these effects are manifestly at play. In particular, here we present examples of density-functional theory investigations for two main classes of materials: (a) multiferroics where ferroelectricity is driven by hybridization or purely structural effects, with BiFeO 3 as the prototype material, and (b) multiferroics where ferroelectricity is driven by correlation effects and is strongly linked to electronic degrees of freedom such as spin-, charge-, or orbital-ordering, with rare-earth manganites as prototypes. As for the first class of multiferroics, first principles calculations are shown to provide an accurate qualitative and quantitative description of the physics in BiFeO 3 , ranging from the prediction of large ferroelectric polarization and weak ferromagnetism, over the effect of epitaxial strain, to the identification of possible scenarios for coupling between ferroelectric and magnetic order. For the second class of multiferroics, ab initio calculations have shown that, in those cases where spin-ordering breaks inversion symmetry (e.g. in antiferromagnetic E-type HoMnO 3 ), the magnetically induced ferroelectric polarization can be as large as a few μC cm -2 . The examples presented point the way to several possible avenues for future research: on the technological side, first principles simulations can contribute to a rational materials design, aimed at identifying spintronic materials that exhibit ferromagnetism and ferroelectricity at or above room temperature. On the

Enhanced magnetic behavior, exchange bias effect, and dielectric property of BiFeO3 incorporated in (BiFeO30.50 (Co0.4Zn0.4Cu0.2 Fe2O40.5 nanocomposite

Directory of Open Access Journals (Sweden)

K. Mukhopadhyay

2014-03-01

Full Text Available Nanoparticles of BiFeO3 (BFO are incorporated in the nanocomposite of (BiFeO30.50 (Co0.4Zn0.4Cu0.2 Fe2O40.5, (BFO-CZCF and these are prepared by chemical route. The formation of pure crystallographic phase of each component (BFO and CZCF in the nanocomposite of BFO-CZCF has been confirmed by Rietveld analysis of the X-ray diffractograms using FULLPROF program. Morphology, average particle size and its distribution, crystallographic phase etc. are obtained from the high-resolution transmission electron microscopy of BFO-CZCF. Magnetic measurements of BFO-CZCF have been carried out to explore the modulation of magnetic behavior of BFO in BFO-CZCF. Interestingly, magnetization of BFO-CZCF has been drastically enhanced compared to that of the pristine BFO. An exchange bias effect is also observed in the M vs. H loops of BFO-CZCF recorded in field cooled and zero field cooled conditions, which suggest that nanoparticles of BFO (AFM are encapsulated by nanoparticles of CZCF (FM in BFO-CZCF. Thermal variation of dielectric constant of BFO-CZCF is recorded in the range of 300 to 1073 K and a ferroelectric to paraelectric transition is observed at ∼728 K. Enhanced magnetic property of BFO would quite interesting for this important multiferroic.

Evidence of sharp and diffuse domain walls in BiFeO3 by means of unit-cell-wise strain and polarization maps obtained with high resolution scanning transmission electron microscopy.

Science.gov (United States)

Lubk, A; Rossell, M D; Seidel, J; He, Q; Yang, S Y; Chu, Y H; Ramesh, R; Hÿtch, M J; Snoeck, E

2012-07-27

Domain walls (DWs) substantially influence a large number of applications involving ferroelectric materials due to their limited mobility when shifted during polarization switching. The discovery of greatly enhanced conduction at BiFeO(3) DWs has highlighted yet another role of DWs as a local material state with unique properties. However, the lack of precise information on the local atomic structure is still hampering microscopical understanding of DW properties. Here, we examine the atomic structure of BiFeO(3) 109° DWs with pm precision by a combination of high-angle annular dark-field scanning transmission electron microscopy and a dedicated structural analysis. By measuring simultaneously local polarization and strain, we provide direct experimental proof for the straight DW structure predicted by ab initio calculations as well as the recently proposed theory of diffuse DWs, thus resolving a long-standing discrepancy between experimentally measured and theoretically predicted DW mobilities.

Microstructure, Piezoelectric, and Ferroelectric Properties of BZT-Modified BiFeO3-BaTiO3 Multiferroic Ceramics with MnO2 and CuO Addition

Science.gov (United States)

Guan, Shibo; Yang, Huabin; Chen, Guangcong; Zhang, Rui

2018-02-01

A new lead-free piezoelectric ceramic, 0.67BiFeO3-0.33BaTiO3-xBi(Zn0.5Ti0.5) O3 + 0.0035MnO2 + 0.004CuO, was prepared through the solid-state reaction route. The ceramic was sintered in the 950-990°C range. In this paper, the crystal structure of the sample is pure perovskite structure with a pseudo-cubic structure in the range of x = 0-0.05, and does not change greatly with the increase of x. The grain size increases first and then decreases with the increase of x. The addition of Bi(Zn0.5Ti0.5) O3(BZT) promoted the grain growth of the sample. The piezoelectric constant reached the maximum value of d 33 = 188 pC/N, electromechanical coupling coefficient k p = 0.301 and the remanent polarization P r = 61.20 μC/cm2 at x = 0.03. It has a high Curie temperature of T c = 420°C. On the other hand, the depolarization temperature reaches the maximum value, T d = 426°C, at x = 0. A small amount of BZT doping can improve the piezoelectric, dielectric, and ferroelectric properties of the samples. Therefore, this material can be considered as a promising lead-free piezoelectric ceramic material in the application field of high-temperature materials.

BiFeO3 Crystal Structure at Low Temperatures

International Nuclear Information System (INIS)

Palewicz, A.; Sosnowska, I.; Przenioslo, R.; Hewat, A.W.

2010-01-01

The crystal and magnetic structure of BiFeO 3 have been studied with the use of high resolution neutron diffraction between 5 K and 300 K. The atomic coordinates in BiFeO 3 are almost unchanged between 5 K and 300 K. (authors)

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Science.gov (United States)

Jiang, Jun; Bai, Zi Long; Chen, Zhi Hui; He, Long; Zhang, David Wei; Zhang, Qing Hua; Shi, Jin An; Park, Min Hyuk; Scott, James F.; Hwang, Cheol Seong; Jiang, An Quan

2018-01-01

Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.

Enhanced photocatalytic property of BiFeO_3/N-doped graphene composites and mechanism insight

International Nuclear Information System (INIS)

Li, Pai; Li, Lei; Xu, Maji; Chen, Qiang; He, Yunbin

2017-01-01

Highlights: • A hydrothermal process was used to prepare BiFeO_3/N-doped graphene composites. • BiFeO_3/N-doped graphene exhibits superior photocatalytic activity and stability. • The energy band of BiFeO_3 bends downward by ∼1.0 eV at the composite interface. • Downward band bending leads to rapid electron transfer at the composite interface. • Holes and ·OH are predominant active species in the photo-degradation process. - Abstract: A series of BiFeO_3/(N-doped) graphene composites are prepared by a facile hydrothermal method. BiFeO_3/N-doped graphene shows photocatalytic performance superior to that of BiFeO_3/graphene and pristine BiFeO_3. The enhanced photo-degradation performance of BiFeO_3/N-doped graphene are mainly attributable to the improved light absorbance of the composite, abundant active adsorption sites and high electrical charge mobility of N-doped graphene, and the downward band bending of BiFeO_3 at the composite interface. In particular, X-ray photoelectron spectroscopy analyses reveal that the electron energy band of BiFeO_3 is downward bent by 1.0 eV at the interface of BiFeO_3/N-doped graphene, because of different work functions of both materials. This downward band bending facilitates the transfer of photogenerated electrons from BiFeO_3 to N-doped graphene and prompts the separation of photo-generated electron-hole pairs, leading eventually to the enhanced photocatalytic performance.

Fabrication, Characterization, Properties, and Applications of Low-Dimensional BiFeO3 Nanostructures

Directory of Open Access Journals (Sweden)

Heng Wu

2014-01-01

Full Text Available Low-dimensional BiFeO3 nanostructures (e.g., nanocrystals, nanowires, nanotubes, and nanoislands have received considerable attention due to their novel size-dependent properties and outstanding multiferroic properties at room temperature. In recent years, much progress has been made both in fabrications and (microstructural, electrical, and magnetic in characterizations of BiFeO3 low-dimensional nanostructures. An overview of the state of art in BiFeO3 low-dimensional nanostructures is presented. First, we review the fabrications of high-quality BiFeO3 low-dimensional nanostructures via a variety of techniques, and then the structural characterizations and physical properties of the BiFeO3 low-dimensional nanostructures are summarized. Their potential applications in the next-generation magnetoelectric random access memories and photovoltaic devices are also discussed. Finally, we conclude this review by providing our perspectives to the future researches of BiFeO3 low-dimensional nanostructures and some key problems are also outlined.

Role of an ultrathin platinum seed layer in antiferromagnet-based perpendicular exchange coupling and its electrical manipulation

Energy Technology Data Exchange (ETDEWEB)

Wang, Y.Y., E-mail: wangyy@buaa.edu.cn [Department of Physics, Beihang University, Beijing 100191 (China); Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Song, C., E-mail: songcheng@mail.tsinghua.edu.cn [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhang, J.Y. [Department of Physics, Beihang University, Beijing 100191 (China); Pan, F. [Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

2017-04-15

The requirement for low-power consumption advances the development of antiferromagnetic (AFM) spintronics manipulated by electric fields. Here we report an electrical manipulation of metallic AFM moments within IrMn/[Co/Pt] by interface engineering, where ultrathin non-magnetic metals are highlighted between IrMn and ferroelectric substrates. Ultrathin Pt seed layers are proved to be vital in elevating the blocking temperature and enhancing the perpendicular exchange coupling through modulating the domain structures of as-prepared IrMn AFM. Further electrical manipulations of perpendicular magnetic anisotropy crucially verify the indispensable role of pre-deposited ultrathin Pt layers in modulating IrMn antiferromagnetic moments, which is confirmed by the intimate correlation between the electrically manipulating AFM and improving its blocking temperature. Instead of immediate contact between IrMn AFM and ferroelectric substrates in a conventional way, interface engineering by adopting ultrathin seed layers here adds a new twist to the electrical modulation of AFM metals. This would provide scientific basis on how to manipulate AFM moments and optimize the design of practical AFM spintronics. - Highlights: • An alternative for manipulating antiferromagnet by interface engineering is provided. • Ultrathin Pt seed layers are vital in elevating the blocking temperature of IrMn. • Perpendicular exchange coupling in IrMn/[Co/Pt] can be modulated by seed layers. • Ultrathin Pt seed layers enable electrical control of perpendicular exchange coupling.

Role of an ultrathin platinum seed layer in antiferromagnet-based perpendicular exchange coupling and its electrical manipulation

International Nuclear Information System (INIS)

Wang, Y.Y.; Song, C.; Zhang, J.Y.; Pan, F.

2017-01-01

The requirement for low-power consumption advances the development of antiferromagnetic (AFM) spintronics manipulated by electric fields. Here we report an electrical manipulation of metallic AFM moments within IrMn/[Co/Pt] by interface engineering, where ultrathin non-magnetic metals are highlighted between IrMn and ferroelectric substrates. Ultrathin Pt seed layers are proved to be vital in elevating the blocking temperature and enhancing the perpendicular exchange coupling through modulating the domain structures of as-prepared IrMn AFM. Further electrical manipulations of perpendicular magnetic anisotropy crucially verify the indispensable role of pre-deposited ultrathin Pt layers in modulating IrMn antiferromagnetic moments, which is confirmed by the intimate correlation between the electrically manipulating AFM and improving its blocking temperature. Instead of immediate contact between IrMn AFM and ferroelectric substrates in a conventional way, interface engineering by adopting ultrathin seed layers here adds a new twist to the electrical modulation of AFM metals. This would provide scientific basis on how to manipulate AFM moments and optimize the design of practical AFM spintronics. - Highlights: • An alternative for manipulating antiferromagnet by interface engineering is provided. • Ultrathin Pt seed layers are vital in elevating the blocking temperature of IrMn. • Perpendicular exchange coupling in IrMn/[Co/Pt] can be modulated by seed layers. • Ultrathin Pt seed layers enable electrical control of perpendicular exchange coupling.

Ferroelectric ferrimagnetic LiFe2F6 : Charge-ordering-mediated magnetoelectricity

Science.gov (United States)

Lin, Ling-Fang; Xu, Qiao-Ru; Zhang, Yang; Zhang, Jun-Jie; Liang, Yan-Ping; Dong, Shuai

2017-12-01

Trirutile-type LiFe2F6 is a charge-ordered material with an Fe2 +/Fe3 + configuration. Here, its physical properties, including magnetism, electronic structure, phase transition, and charge ordering, are studied theoretically. On one hand, the charge ordering leads to improper ferroelectricity with a large polarization. On the other hand, its magnetic ground state can be tuned from the antiferromagnetic to ferrimagnetic by moderate compressive strain. Thus, LiFe2F6 can be a rare multiferroic with both large magnetization and polarization. Most importantly, since the charge ordering is the common ingredient for both ferroelectricity and magnetization, the net magnetization may be fully switched by flipping the polarization, rendering intrinsically strong magnetoelectric effects and desirable functions.

First-principles approach to the dynamic magnetoelectric couplings for the non-reciprocal directional dichroism in BiFeO3

Science.gov (United States)

Lee, Jun Hee; Kézsmáki, István; Fishman, Randy S.

2016-04-01

Due to the complicated magnetic and crystallographic structures of BiFeO3, its magnetoelectric (ME) couplings and microscopic model Hamiltonian remain poorly understood. By employing a first-principles approach, we uncover all possible ME couplings associated with the spin-current (SC) and exchange-striction (ES) polarizations, and construct an appropriate Hamiltonian for the long-range spin-cycloid in BiFeO3. First-principles calculations are used to understand the microscopic origins of the ME couplings. We find that inversion symmetries broken by ferroelectric and antiferroelectric distortions induce the SC and the ES polarizations, which cooperatively produce the dynamic ME effects in BiFeO3. A model motivated by first principles reproduces the absorption difference of counter-propagating light beams called non-reciprocal directional dichroism. The current paper focuses on the spin-driven (SD) polarizations produced by a dynamic electric field, i.e. the dynamic ME couplings. Due to the inertial properties of Fe, the dynamic SD polarizations differ significantly from the static SD polarizations. Our systematic approach can be generally applied to any multiferroic material, laying the foundation for revealing hidden ME couplings on the atomic scale and for exploiting optical ME effects in the next generation of technological devices such as optical diodes. This manuscript has been written by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the US Department of Energy. The United States Government retains and the publisher, by accepting the article for publication, acknowledges that the United States Government retains a non-exclusive, paid-up, irrevocable, world-wide license to publish or reproduce the published form of this manuscript, or allow others to do so, for United States Government purposes. The Department of Energy will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan.

Origin of Ferrimagnetism and Ferroelectricity in Room-Temperature Multiferroic ɛ -Fe2O3

Science.gov (United States)

Xu, K.; Feng, J. S.; Liu, Z. P.; Xiang, H. J.

2018-04-01

Exploring and identifying room-temperature multiferroics is critical for developing better nonvolatile random-access memory devices. Recently, ɛ -Fe2O3 was found to be a promising room-temperature multiferroic with a large polarization and magnetization. However, the origin of the multiferroicity in ɛ -Fe2O3 is still puzzling. In this work, we perform density-functional-theory calculations to reveal that the spin frustration between tetrahedral-site Fe3 + spins gives rise to the unexpected ferrimagnetism. For the ferroelectricity, we identify a low-energy polarization switching path with an energy barrier of 85 meV /f .u . by performing a stochastic surface walking simulation. The switching of the ferroelectric polarization is achieved by swapping the tetrahedral Fe ion with the octahedral Fe ion, different from the usual case (e.g., in BaTiO3 and BiFeO3 ) where the coordination number remains unchanged after the switching. Our results not only confirm that ɛ -Fe2O3 is a promising room-temperature multiferroic but also provide guiding principles to design high-performance multiferroics.

Multiferroic BiFeO3-BiMnO3 Nanocheckerboard From First Principles

OpenAIRE

Palova, L.; Chandra, P.; Rabe, K. M.

2010-01-01

We present a first principles study of an unusual heterostructure, an atomic-scale checkerboard of BiFeO3-BiMnO3, and compare its properties to the two bulk constituent materials, BiFeO3 and BiMnO3. The "nanocheckerboard" is found to have a multiferroic ground state with the desired properties of each constituent: polar and ferrimagnetic due to BiFeO3 and BiMnO3, respectively. The effect of B-site cation ordering on magnetic ordering in the BiFeO3-BiMnO3 system is studied. The checkerboard ge...

modified BiFeO3–BaTiO3

Indian Academy of Sciences (India)

based perovskite structures lead- free BiFeO3–BaTiO3 solid solutions are popularly studied due to the high Curie temperature (TC). It was reported that the BiFeO3–BaTiO3 system possessed high piezoelectric. ∗. Author for correspondence ...

Anharmonic phonons and magnons in BiFeO3

Energy Technology Data Exchange (ETDEWEB)

Delaire, Olivier A [ORNL; Ma, Jie [ORNL; Stone, Matthew B [ORNL; Huq, Ashfia [ORNL; Gout, Delphine J [ORNL; Brown, Craig [National Institute of Standards and Technology (NIST); Wang, Kefeng [Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing; Ren, Zhifeng [Boston College, Chestnut Hill

2012-01-01

The phonon density of states (DOS) and magnetic excitation spectrum of polycrystalline BiFeO3 were measured for temperatures 200 < T < 750K , using inelastic neutron scattering (INS). Our results indicate that the magnetic spectrum of BiFeO3 closely resembles that of similar Fe perovskites, such as LaFeO3, despite the cycloid modulation in BiFeO3. We do not find any evidence for a spin gap. A strong T-dependence of the phonon DOS was found, with a marked broadening of the whole spectrum, providing evidence of strong anharmonicity. This anharmonicity is corroborated by large amplitude motions of Bi and O ions observed with neutron diffraction. These results highlight the importance of spin-phonon coupling in this material.

Photoelectrochemical Performance Observed in Mn-Doped BiFeO3 Heterostructured Thin Films

Directory of Open Access Journals (Sweden)

Hao-Min Xu

2016-11-01

Full Text Available Pure BiFeO3 and heterostructured BiFeO3/BiFe0.95Mn0.05O3 (5% Mn-doped BiFeO3 thin films have been prepared by a chemical deposition method. The band structures and photosensitive properties of these films have been investigated elaborately. Pure BiFeO3 films showed stable and strong response to photo illumination (open circuit potential kept −0.18 V, short circuit photocurrent density was −0.023 mA·cm−2. By Mn doping, the energy band positions shifted, resulting in a smaller band gap of BiFe0.95Mn0.05O3 layer and an internal field being built in the BiFeO3/BiFe0.95Mn0.05O3 interface. BiFeO3/BiFe0.95Mn0.05O3 and BiFe0.95Mn0.05O3 thin films demonstrated poor photo activity compared with pure BiFeO3 films, which can be explained by the fact that Mn doping brought in a large amount of defects in the BiFe0.95Mn0.05O3 layers, causing higher carrier combination and correspondingly suppressing the photo response, and this negative influence was more considerable than the positive effects provided by the band modulation.

Effect of La3+ substitution on the phase transitions, microstructure and electrical properties of Bi1−xLaxFeO3 ceramics

International Nuclear Information System (INIS)

Zhang, Qiang; Zhu, Xiaohong; Xu, Yunhui; Gao, Haobin; Xiao, Yunjun; Liang, Dayun; Zhu, Jiliang; Zhu, Jianguo; Xiao, Dingquan

2013-01-01

Highlights: ► Structural properties of Bi 1−x La x FeO 3 ceramics are improved by La 3+ substitution. ► Significant magnetoelectric responses are observed in Bi 1−x La x FeO 3 ceramics. ► T C is lowered while T N is enhanced in the La-doped BiFeO 3 ceramics. ► Much higher dielectric constant is obtained in the La-doped BiFeO 3 ceramics. ► The ferroelectric properties are enhanced in the La-doped BiFeO 3 ceramics. - Abstract: Multiferroic Bi 1−x La x FeO 3 (x = 0.00, 0.05, 0.10, 0.15, 0.20) (represented as B 1−x L x FO) ceramics were prepared using the conventional solid state reaction route. The effects of La 3+ doping on the density, phase structure, morphology, dielectric and ferroelectric properties were investigated. Judging from X-ray diffraction patterns, all the B 1−x L x FO ceramic samples were well crystallized in a pure perovskite phase while the crystal structure changed from rhombohedral to orthorhombic with increasing the La 3+ substitution. SEM observations clearly revealed that the grain size was remarkably decreased by La 3+ doping. As a result, the ferroelectric Curie temperature was lowered in the La-doped ceramics. However, the abnormal dielectric responses near the antiferromagnetic Néel temperature (T N ) demonstrated the existence of remarkable magnetoelectric coupling in the Bi 1−x La x FeO 3 ceramics, and the T N was shown to increase substantially with the increase in La 3+ doping content. It was found that the dielectric permittivity of the ceramics was significantly increased and the dielectric loss was slightly increased with the increase in La 3+ content. The dielectric constant ε r of the Bi 0.85 La 0.15 FeO 3 ceramic at 10 kHz reached as high as 1008, 20 times larger than that for pure BiFeO 3 . In addition, the ferroelectric properties of the B 1−x L x FO ceramics were improved and the remanent polarization was increased by La 3+ doping. This is probably because the A-site doping with more stable La 3+ could

Stress induced enhanced polarization in multilayer BiFeO3/BaTiO3 structure with improved energy storage properties

Directory of Open Access Journals (Sweden)

Savita Sharma

2015-10-01

Full Text Available Present work reports the fabrication of a multilayer (5-layer structure of BiFeO3(BFO/BaTiO3(BTO using spin-coating technique. The crystallographic structure, surface morphology and ferroelectric behavior of multilayer structure in metal-ferroelectric-metal capacitor have been studied. Le-Bail refinement of X-ray diffraction data revealed the formation of polycrystalline pure perovskite phase with induced stress. The values of remnant (Pr and saturation polarization (Ps for BFO/BTO multilayer structure are found to be 38.14 μC/cm2 and 71.54 μC/cm2 respectively, which are much higher than the corresponding values reported for bare BFO thin film. A large value of dielectric constant of 187 has been obtained for multilayer structure with a low leakage current density of 1.09 × 10−7 A/cm2 at applied bias of 10 V. The BFO/BTO multilayer structure favors the enhanced energy storage capacity as compared to bare BFO thin film with improved values of energy-density and charge-discharge efficiency as 121 mJ/cm3 and 59% respectively, suggesting futuristic energy storage applications.

Structural, electrical and multiferroic characteristics of thermo-mechanically fabricated BiFeO3-(BaSr)TiO3 solid solutions

Science.gov (United States)

Behera, C.; Choudhary, R. N. P.; Das, Piyush R.

2018-05-01

A solid solution consisting of two perovskite compounds (BiFeO3 and (BaSr)TiO3) of chemical composition (Bi1/2Ba1/4Sr1/4)(Fe1/2Ti1/2)O3 has been fabricated in the low dimensional regime by thermo-mechanical (ball milling and heating) approach. The effect of particle size on the structural, micro-structural, relative permittivity, switching (ferroelectric and magnetic) and conduction phenomena of the material has been studied using various experimental techniques such as x-rays diffraction, transmission and scanning electron microscopy, ferroelectric and magnetic hysteresis, dynamic magneto-electric coupling measurement and impedance spectroscopy techniques. All the above extracted properties are found to be particle size dependent. The first order magneto-electric coupling constant is found to be 2.56, 6.6 and 8.7 mV cm‑1.Oe for 30, 60 and 90 h milled calcined (hmc) sample respectively. As the above micro/nano-material with different particle size, has a high relative dielectric constant and low tangent loss, it can be used for some multifunctional devices including capacity energy storage device in nano-electronics.

Containerless solidification of BiFeO3 oxide under microgravity

Science.gov (United States)

Yu, Jianding; Arai, Yasutomo; Koshikawa, Naokiyo; Ishikawa, Takehito; Yoda, Shinichi

1999-07-01

Containerless solidification of BiFeO3 oxide has been carried out under microgravity with Electrostatic Levitation Furnace (ELF) aboard on the sounding rocket (TR-IA). It is a first containerless experiment using ELF under microgravity for studying the solidification of oxide insulator material. Spherical BiFeO3 sample with diameter of 5mm was heated by two lasers in oxygen and nitrogen mixing atmosphere, and the sample position by electrostatic force under pinpoint model and free drift model. In order to compare the solidification behavior in microgravity with on ground, solidification experiments of BiFeO3 in crucible and drop tube were carried out. In crucible experiment, it was very difficult to get single BiFeO3 phase, because segregation of Fe2O3 occured very fast and easily. In drop tube experiment, fine homogeneous BiFeO3 microstructure was obtained in a droplet about 300 μm. It implies that containerless processing can promote the phase selection in solidification. In microgravity experiment, because the heating temperature was lower than that of estimated, the sample was heated into Fe2O3+liquid phase region. Fe2O3 single crystal grew on the surface of the spherical sample, whose sample was clearly different from that observed in ground experiments.

Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films

Science.gov (United States)

Heon Kim, Tae; Yoon, Jong-Gul; Hyub Baek, Seung; Park, Woong-Kyu; Mo Yang, Sang; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Won Noh, Tae

2015-07-01

Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

Energy landscape scheme for an intuitive understanding of complex domain dynamics in ferroelectric thin films.

Science.gov (United States)

Kim, Tae Heon; Yoon, Jong-Gul; Baek, Seung Hyub; Park, Woong-kyu; Yang, Sang Mo; Yup Jang, Seung; Min, Taeyuun; Chung, Jin-Seok; Eom, Chang-Beom; Noh, Tae Won

2015-07-01

Fundamental understanding of domain dynamics in ferroic materials has been a longstanding issue because of its relevance to many systems and to the design of nanoscale domain-wall devices. Despite many theoretical and experimental studies, a full understanding of domain dynamics still remains incomplete, partly due to complex interactions between domain-walls and disorder. We report domain-shape-preserving deterministic domain-wall motion, which directly confirms microscopic return point memory, by observing domain-wall breathing motion in ferroelectric BiFeO3 thin film using stroboscopic piezoresponse force microscopy. Spatial energy landscape that provides new insights into domain dynamics is also mapped based on the breathing motion of domain walls. The evolution of complex domain structure can be understood by the process of occupying the lowest available energy states of polarization in the energy landscape which is determined by defect-induced internal fields. Our result highlights a pathway for the novel design of ferroelectric domain-wall devices through the engineering of energy landscape using defect-induced internal fields such as flexoelectric fields.

Enhanced magnetic properties of chemical solution deposited BiFeO3 thin film with ZnO buffer layer

International Nuclear Information System (INIS)

Rajalakshmi, R.; Kambhala, Nagaiah; Angappane, S.

2012-01-01

Highlights: ► Enhanced magnetization of BiFeO 3 is important for strong magnetoelectric coupling. ► BiFeO 3 film with ZnO buffer layer was successfully synthesized by chemical method. ► Magnetization of BiFeO 3 has increased by more than 10 times with ZnO buffer layer. ► A mechanism for enhancement in ferromagnetism of BiFeO 3 film is proposed. - Abstract: Magnetic properties of BiFeO 3 films deposited on Si substrates with and without ZnO buffer layer have been studied in this work. We adopted the chemical solution deposition method for the deposition of BiFeO 3 as well as ZnO films. The x-ray diffraction measurements on the deposited films confirm the formation of crystalline phase of BiFeO 3 and ZnO films, while our electron microscopy measurements help to understand the morphology of few micrometers thick films. It is found that the deposited ZnO film exhibit a hexagonal particulate surface morphology, whereas BiFeO 3 film fully covers the ZnO surface. Our magnetic measurements reveal that the magnetization of BiFeO 3 has increased by more than ten times in BiFeO 3 /ZnO/Si film compared to BiFeO 3 /Si film, indicating the major role played by ZnO buffer layer in enhancing the magnetic properties of BiFeO 3 , a technologically important multiferroic material.

Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

Science.gov (United States)

Prasannakumara, R.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

Study on superstructure in ion co-doped BiFeO3 by using transmission electron microscopy

Science.gov (United States)

Pu, Shi-Zhou; Guo, Chao; Li, Mei-Ya; Chen, Zhen-Lian; Zou, Hua-Min

2015-04-01

La3+ and V5+ co-doped BiFeO3 ceramics are synthesized by rapid liquid sintering technique. The modulated structure in Bi0.85La0.15Fe0.97V0.03O3 is investigated by using transmission electron microscopy (TEM). Two kinds of superstructures are observed in the samples. One is the component modulated superstructure and twin-domain, which is generated by La3+ ordered substitution for Bi3+ and frequently appears. The chemical composition of the superstructure is explored by x-ray energy dispersive spectroscopy (EDS). The model of the ordered structure is proposed. Simulation based on the model is conducted. The second is the fluorite-type δ-Bi2O3 related superstructure. The relation between the ferroelectric property and the microstructure of the sample is also discussed. Project supported by the National Natural Science Foundation of China (Grant Nos. 51372174, 11074193, and 51132001) and the Fundamental Research Funds for the Central Universities.

Structural, spectroscopic, and dielectric characterizations of Mn-doped 0.67BiFeO3-0.33BaTiO3 multiferroic ceramics

KAUST Repository

Hang, Qiming

2013-09-07

0.67BiFeO3-0.33BaTiO3 multiferroic ceramics doped with x mol% MnO2 (x = 2–10) were synthesized by solid-state reaction. The formation of a perovskite phase with rhombohedral symmetry was confirmed by X-ray diffraction (XRD). The average grain sizes were reduced from 0.80 μm to 0.50 μm as increasing the Mn-doped levels. Single crystalline nature of the grains was revealed by high-resolution transmission electron microscopy (HRTEM) images and electron diffraction patterns. Polar nano-sized ferroelectric domains with an average size of 9 nm randomly distributed in the ceramic samples were revealed by TEM images. Ferroelectric domain lamellae (71° ferroelectric domains) with an average width of 5 nm were also observed. Vibrational modes were examined by Raman spectra, where only four Raman peaks at 272 cm−1 (E-4 mode), 496 cm−1 (A 1-4 mode), 639 cm−1, and 1338 cm−1 were observed. The blue shifts in the E-4 and A 1-4 Raman mode frequencies were interpreted by a spring oscillator model. The dieletric constants of the present ceramics as a function of the Mn-doped levels exhibited a V-typed curve. They were in the range of 350–700 measured at 103 Hz, and the corresponding dielectric losses were in range of 0.43–0.96, approaching to 0.09 at 106 Hz.

Structural, spectroscopic, and dielectric characterizations of Mn-doped 0.67BiFeO3-0.33BaTiO3 multiferroic ceramics

KAUST Repository

Hang, Qiming; Zhou, Wenke; Zhu, Xinhua; Zhu, Jianmin; Liu, Zhiguo; Al-Kassab, Talaat

2013-01-01

0.67BiFeO3-0.33BaTiO3 multiferroic ceramics doped with x mol% MnO2 (x = 2–10) were synthesized by solid-state reaction. The formation of a perovskite phase with rhombohedral symmetry was confirmed by X-ray diffraction (XRD). The average grain sizes were reduced from 0.80 μm to 0.50 μm as increasing the Mn-doped levels. Single crystalline nature of the grains was revealed by high-resolution transmission electron microscopy (HRTEM) images and electron diffraction patterns. Polar nano-sized ferroelectric domains with an average size of 9 nm randomly distributed in the ceramic samples were revealed by TEM images. Ferroelectric domain lamellae (71° ferroelectric domains) with an average width of 5 nm were also observed. Vibrational modes were examined by Raman spectra, where only four Raman peaks at 272 cm−1 (E-4 mode), 496 cm−1 (A 1-4 mode), 639 cm−1, and 1338 cm−1 were observed. The blue shifts in the E-4 and A 1-4 Raman mode frequencies were interpreted by a spring oscillator model. The dieletric constants of the present ceramics as a function of the Mn-doped levels exhibited a V-typed curve. They were in the range of 350–700 measured at 103 Hz, and the corresponding dielectric losses were in range of 0.43–0.96, approaching to 0.09 at 106 Hz.

Doping effect on ferromagnetism, ferroelectricity and dielectric constant in sol-gel derived Bi1-xNdxFe1-yCoyO3 nanoceramics

Science.gov (United States)

Das, Sananda; Sahoo, R. C.; Bera, K. P.; Nath, T. K.

2018-04-01

Doping at the post-transition metal site by trivalent rare-earth ions and 3d transition metal site by transition metal ions in perovskite lattice has observed a variety of magnetic and electronic orders with spatially correlated charge, spin and orbital degrees of freedom. Here, we report large ferromagnetism and enhanced dielectric constant (at ∼100 Hz) in chemically synthesized single phase multiferroic Bi1-xNdxFe1-yCoyO3 (x = 0, 0.10; y = 0, 0.10) nanoparticles (average particles size ∼45 nm). We have also examined the ferroelectric nature of our chemically synthesized samples. The Rietveld refinement of the XRD data reveals the structural symmetry breaking from distorted rhombohedral R3c structure of BiFeO3 to the triclinic P1 structure in Bi0.9Nd0.1Fe0.9Co0.1O3 (BNFCO) without having any iron rich impurity phase. The magnetization in these nanoceramics most likely originates from the coexistence of mixed valence states of Fe ion (Fe2+ and Fe3+). A high room temperature dielectric constant (∼1050) has been observed at 100 Hz of BNFCO sample. The frequency dependent anomalies near Neel temperature of antiferromagnet in temperature variation of dielectric study have been observed for all the doped and co-doped samples exhibiting typical characteristic of relaxor ferroelectrics. A spectacular enhancement of remanent magnetization MR (∼7.2 emu/gm) and noticeably large coercivity HC (∼17.4 kOe) at 5 K have been observed in this BNFCO sample. Such emergence of ferromagnetic ordering indicates the canting of the surface spins at the surface boundaries because of the reduction of particle size in nanodimension. We have also observed P-E hysteresis loops with a remanent polarization of 26 μC/cm2 and coercive field of 5.6 kV/cm of this sample at room temperature. From impedance spectroscopy study the estimated activation energy of 0.41 eV suggests the semiconducting nature of our nanoceramic BNCFO sample.

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

KAUST Repository

Yin, Y. W.

2015-03-03

As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

Structure and phase transition of BiFeO3 cubic micro-particles prepared by hydrothermal method

International Nuclear Information System (INIS)

Zhou, Jian-Ping; Yang, Ruo-Lin; Xiao, Rui-Juan; Chen, Xiao-Ming; Deng, Chao-Yong

2012-01-01

Graphical abstract: Bismuth ferrite (BiFeO 3 ) cubic micro-particles with smooth surfaces were synthesized. BiFeO 3 has a hexagonal perovskite structure with a space group R3c below 370 °C and rhombohedral perovskite structure with a space group R3m below 755 °C, undergoes a phase transition in the temperature range of 755–817 °C to a cubic structure, then decompose to liquid and Fe 2 O 3 above 939 °C. Highlights: ► BiFeO 3 micro-particles with smooth surface were synthesized by hydrothermal method. ► BiFeO 3 enjoys hexagonal structure with well element ratio and chemical valence. ► BiFeO 3 transition from rhombohedral phase to cubic phase lasts 60 °C. -- Abstract: Single-phase bismuth ferrite (BiFeO 3 ) powders were synthesized with a hydrothermal method by controlling the experimental conditions carefully. The powder structure, morphology and composition were characterized by using X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscope, Raman measurement and X-ray photoelectron spectroscopy. The particles change from irregular agglomerations to regular cubes with increasing KOH concentration. The large BiFeO 3 cubic particles enjoy much smooth surfaces with well-matched element ratio (Bi:Fe:O = 1:1:3) and chemical valence (Bi 3+ , Fe 3+ and O 2− ). The high temperature XRD and differential scanning calorimetry show that BiFeO 3 powders have a hexagonal perovskite structure with a space group R3c below 370 °C and a rhombohedral structure with a space group R3m below 755 °C. BiFeO 3 undergoes a phase transition in the temperature range of 755–817 °C from rhombohedral structure to a cubic phase, then decomposes to liquid and Fe 2 O 3 above 939 °C.

Displacement-type ferroelectric transition with magnetic Mn ions in perovskite Sr1-xBaxMnO3

Science.gov (United States)

Sakai, Hideaki; Fujioka, Jun; Fukuda, Tatsuo; Okuyama, Daisuke; Hashizume, Daisuke; Kagawa, Fumitaka; Nakao, Hironori; Murakami, Youich; Arima, Takahisa; Baron, Alfred Q. R.; Taguchi, Yasujiro; Tokura, Yoshinori

2012-02-01

Almost all the proper ferroelectrics with a perovskite structure discovered so far have no d-electrons in the off-center transition metal site, as exemplified by BaTiO3 and Pb(Zr,Ti)O3. This empirical d^0 rule is incompatible with the emergence of magnetism and has significantly restricted the variety of multiferroic materials. In this work, we have discovered a displacement-type ferroelectric transition originating from off-center Mn^4+ ions in antiferromagnetic Mott insulators Sr1-xBaxMnO3. As Ba concentration increases, the perovskite lattice shows the typical soft mode dynamics, and the ferroelectricity shows up for x .45. In addition to the large polarization and high transition temperature comparable to BaTiO3, we demonstrate that the magnetic order suppresses the ferroelectric lattice dilation by ˜70% and increases the soft-phonon energy by ˜50%, indicating gigantic magnetoelectric effects [1]. This work was supported by the FIRST program on ``Quantum Science on Strong Correlation''. [4pt] [1] H. Sakai et al., Phys. Rev. Lett. 107, 137601 (2011).

Presence of glassy state and large exchange bias in nanocrystalline BiFeO3

Science.gov (United States)

Srivastav, Simant Kumar; Johari, Anima; Patel, S. K. S.; Gajbhiye, N. S.

2017-11-01

We investigated the static and dynamic aspects of the magnetic properties for single phase nanocrystalline BiFeO3 with average crystallite size of 35 nm. The frequency dependence of the peak is observed in the real part of ac susceptibility χ‧ac vs T measurement and described well by the Vogel-Fulcher law as well as the power law. These analyses indicated the existence of cluster glass state with significant interaction among the spin clusters and results in cluster-glass like cooperative freezing at low temperature. The influence of temperature and magnetic field cooling on the exchange bias effect is investigated. A training effect is also observed. We have reported a significantly high ZFC & FC exchange bias of 200 Oe & 450 Oe at 300 K and 900 Oe & 2100 Oe at 5 K. The obtained results are interpreted in the framework of core-shell model, where the core of the BFO nanoparticles shows antiferromagnetic behavior and surrounded by CG-like ferromagnetic (FM) shell associated to uncompensated surface spins.

Effect of synthesis route on the multiferroic properties of BiFeO3: A comparative study between solid state and sol–gel methods

International Nuclear Information System (INIS)

Suresh, Pittala; Srinath, S.

2015-01-01

Polycrystalline BiFeO 3 (BFO) powder was prepared through optimized solid state (SS) and sol–gel (SG) reaction methods. The effect of preparation routes on the crystal purity and multiferroic properties of the BFO was investigated. Sol–gel synthesis results almost a single-phase material at relatively lower temperatures while the solid-state method results into BFO with a small amount of Bi 2 Fe 4 O 9 secondary phase. The grain size of SG processed sample reduces to half the size of the one that is prepared by SS. Elemental analysis shows a stoichiometric Bi:Fe content for SG samples by restricting the Bi loss. In comparison with the SS samples, dielectric constant of SG samples exhibit higher values with Maxwell–Wagner type dielectric dispersion. A cusp at 50 K was seen in M–T curves for SS samples, for which no frequency dependence was observed in a.c susceptibility measurements ruling out the earlier predictions of spin glass nature in this system. M−H loops show a typical antiferromagnetic nature at 300 K while a weak ferromagnetic behavior is found at 10 K. A slight increase in H C and M r was observed for SG samples over SS. The improved properties of SG processed BFO makes it more promising for applications. - Highlights: • Optimized conditions to attain the BiFeO 3 with minimized impurities are reported. • The influence of the impurities on the dielectric, magnetic properties is reported. • Maxwell–Wagner relaxation is found for BiFeO 3 prepared by sol–gel technique. • a.c. susceptibility measurements ruled out the possibility of spin glass nature. • The anomalous behavior of H C with the temperature is reported

Nanoscale Control of Exchange Bias with BiFeO3 Thin Films

NARCIS (Netherlands)

Martin, Lane W.; Chu, Ying-Hao; Holcomb, Mikel B.; Huijben, Mark; Yu, Pu; Han, Shu-Jen; Lee, Donkoun; Wang, Shan X.; Ramesh, R.

2008-01-01

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions − an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field

Magneto-optical properties of BiFeO3 thin films using surface plasmon resonance technique

International Nuclear Information System (INIS)

Paliwal, Ayushi; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

2014-01-01

Indigeneously assembled surface plasmon resonance (SPR) set up has been exploited to study the magnetic field dependent optical properties of BiFeO 3 thin films. BiFeO 3 thin films have been deposited onto gold (Au) coated glass prism by using pulsed laser deposition technique. The surface plasmon modes in prism/Au/BiFeO 3 /air structure have been excited in Kretschmann configuration at the interface of Au/BiFeO 3 thin films. The SPR reflectance curves obtained for prism/Au/BiFeO 3 /air structure were utilized to investigate the optical properties of BiFeO 3 thin films at optical frequency (λ=633 nm) as a function of applied magnetic field. SPR curves shows a continuous shift towards lower angles with increasing applied magnetic field, which indicate the promising application of ferromagnetic BiFeO 3 film as a magnetic field sensor. Complex dielectric constant of deposited BiFeO 3 film was determined by fitting the experimental SPR data with Fresnel's equations. The variation of complex dielectric constant and refractive index of BiFeO 3 film was studied with increase in magnetic field, and the sensitivity of magnetic field sensor was found to be about 0.52 RIU/T

Covering vertically aligned carbon nanotubes with a multiferroic compound

KAUST Repository

Mahajan, Amit; Rodriguez, Brian J.; Saravanan, K. Venkata; Ramana, E. Venkata; Da Costa, Pedro M. F. J.; Vilarinho, Paula M.

2014-01-01

This work highlights the possible use of vertically-aligned multiwall carbon nanotubes (VA-MWCNTs) as bottom electrodes for microelectronics, for example for memory applications. As a proof of concept BiFeO3 (BFO) films were fabricated in-situ deposited on the surface of VA-MWCNTs by RF (radio frequency) magnetron sputtering. For in situ deposition temperature of 400 °C and deposition time up to 2 h, BFO films cover the MWCNTs and no damage occurs either in the film or MWCNTs. In spite of the macroscopic lossy polarization behaviour, the ferroelectric nature, domain structure and switching of these conformal BFO films was verified by piezo force microscopy. G type antiferromagnetic ordering with weak ferromagnetic ordering loop was proved for BFO films on VA-MWCNTs having a coercive field of 700 Oe.

Covering vertically aligned carbon nanotubes with a multiferroic compound

KAUST Repository

Mahajan, Amit

2014-10-30

This work highlights the possible use of vertically-aligned multiwall carbon nanotubes (VA-MWCNTs) as bottom electrodes for microelectronics, for example for memory applications. As a proof of concept BiFeO3 (BFO) films were fabricated in-situ deposited on the surface of VA-MWCNTs by RF (radio frequency) magnetron sputtering. For in situ deposition temperature of 400 °C and deposition time up to 2 h, BFO films cover the MWCNTs and no damage occurs either in the film or MWCNTs. In spite of the macroscopic lossy polarization behaviour, the ferroelectric nature, domain structure and switching of these conformal BFO films was verified by piezo force microscopy. G type antiferromagnetic ordering with weak ferromagnetic ordering loop was proved for BFO films on VA-MWCNTs having a coercive field of 700 Oe.

Photoconductivity in BiFeO3 thin films

Science.gov (United States)

Basu, S. R.; Martin, L. W.; Chu, Y. H.; Gajek, M.; Ramesh, R.; Rai, R. C.; Xu, X.; Musfeldt, J. L.

2008-03-01

The optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17eV, a direct gap (2.667±0.005eV at 300K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO3 films under illumination from a 100mW /cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1Torr. Large increases in photoconductivity are observed in light.

Pressure-induced phase transitions of multiferroic BiFeO3

OpenAIRE

XiaoLi, Zhang; Ye, Wu; Qian, Zhang; JunCai, Dong; Xiang, Wu; Jing, Liu; ZiYu, Wu; DongLiang, Chen

2013-01-01

Pressure-induced phase transitions of multiferroic BiFeO3 have been investigated using synchrotron radiation X-ray diffraction with diamond anvil cell technique at room temperature. Present experimental data clearly show that rhombohedral (R3c) phase of BiFeO3 first transforms to monoclinic (C2/m) phase at 7 GPa, then to orthorhombic (Pnma) phase at 11 GPa, which is consistent with recent theoretical ab initio calculation. However, we observe another peak at 2{\\theta}=7{\\deg} in the pressure ...

Band-gap tuning and magnetic properties of heterovalent ions (Ba, Sr and Ca) substituted BiFeO_3 nanoparticles

International Nuclear Information System (INIS)

Chauhan, Sunil; Kumar, Manoj; Katyal, S. C.

2016-01-01

A Comparative study of heterovalent Ba, Sr and Ca ions substitution on the structural, vibrational, optical and magnetic properties of BiFeO_3 nanoparticles was carried out. The distorted rhombohedral structure was confirmed from both X-ray diffraction and Raman spectroscopy techniques in pure BiFeO_3 and Bi_0_._8_5A_0_._1_5FeO_3 (A= Ba, Sr and Ca) samples. UV-Visible spectroscopy results show that the band-gap of BiFeO_3 nanoparticles can be tuned by heterovalent ions substitution from 2.12 eV for BiFeO_3 to 2.10, 2.06 and 2.03 eV for Ca, Sr and Ba substituted BiFeO_3 nanoparticles respectively. The magnetic measurements indicate enhancement in magnetization for heterovalent A"2"+ substituted BiFeO_3 samples and the magnetization increases with increase of ionic radius of the substituted ions.

Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

KAUST Repository

Yang, Yang

2014-11-01

Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences. The symmetries of the fundamental Raman modes in 50-700 cm-1 were identified based on group theory. The symmetries of the high order Raman modes in 900-1500 cm-1 of BiFeO3 are determined for the first time, which can provide strong clarifications to the symmetry of the fundamental peaks in 400-700 cm-1 in return. Moreover, the lattice structures of BiFeO3 films are identified consequently on the basis of Raman spectroscopy. BiFeO3 films on SrRuO3 coated SrTiO3 (0 0 1) substrate, CaRuO3 coated SrTiO3 (0 0 1) substrate and tin-doped indium oxide substrate are found to be in the rhombohedral structure, while BiFeO3 film on SrRuO3 coated Nb: SrTiO3 (0 0 1) substrate is in the monoclinic structure. Our results suggest that polarized Raman spectroscopy would be a feasible tool to study the lattice structure of BiFeO3 films.

Synthesis, microstructure and properties of BiFeO3-based multiferroic materials: A review

Directory of Open Access Journals (Sweden)

Bernardo, M. S.

2014-02-01

Full Text Available BiFeO3-based materials are currently one of the most studied multiferroics due to their possible applications at room temperature. However, among the large number of published papers there is much controversy. For example, possibility of synthesizing a pure BiFeO3 phase is still source of discussion in literature. Not even the nature of the binary Bi2O3-Fe2O3 diagram has been clarified yet. The difficulty in controlling the formation of parasite phases reaches the consolidation step. Accordingly, the sintering conditions must be carefully determined both to get dense materials and to avoid bismuth ferrite decomposition. However, the precise conditions to attain dense bismuth ferrite materials are frequently contradictory among different works. As a consequence, the reported properties habitually result opposed and highly irreproducible hampering the preparation of BiFeO3 materials suitable for practical applications. In this context, the purpose of the present review is to summarize the main researches regarding BiFeO3 synthesis, microstructure and properties in order to provide an easier understanding of these materials.Los materiales basados en BiFeO3 son en la actualidad uno de los multiferroicos más estudiados debido a sus posibles aplicaciones a temperatura ambiente. Sin embargo, entre la multitud de trabajos publicados referentes a estos materiales existe mucha controversia. Por ejemplo, la posibilidad de sintetizar una fase BiFeO3 pura es aún objeto de discusión en la bibliografía y la naturaleza de los diagramas de fases del sistema Bi2O3-Fe2O3 aún no está clara. La dificultad para controlar las fases parásitas se extiende al proceso de consolidación por lo que las condiciones de sinterización deben ser cuidadosamente controladas para obtener materiales densos y al mismo tiempo evitar la descomposición de la ferrita. No obstante, las condiciones precisas para obtener materiales densos de BiFeO3 son frecuentemente

Structural, magnetic, and electrical properties of Gd-doped BiFeO3 nanoparticles with reduced particle size

International Nuclear Information System (INIS)

Lotey, Gurmeet Singh; Verma, N. K.

2012-01-01

Pure and Gd-doped BiFeO 3 nanoparticles have been synthesized by sol–gel method. The significant effects of size and Gd-doping on structural, electrical, and magnetic properties have been investigated. X-ray diffraction study reveals that the pure BiFeO 3 nanoparticles possess rhombohedral structure, but with 10% Gd-doping complete structural transformation from rhombohedral to orthorhombic has been observed. The particle size of pure and Gd-doped BiFeO 3 nanoparticles, calculated using Transmission electron microscopy, has been found to be in the range 25–15 nm. Pure and Gd-doped BiFeO 3 nanoparticles show ferromagnetic character, and the magnetization increases with decrease in particle size and increase in doping concentration. Scanning electron microscopy study reveals that grain size decreases with increase in Gd concentration. Well-saturated polarization versus electric field loop is observed for the doped samples. Leakage current density decreases by four orders by doping Gd in BiFeO 3 . The incorporation of Gd in BiFeO 3 enhances spin as well as electric polarization at room temperature. The possible origin of enhancement in these properties has been explained on the basis of dopant and its concentration, phase purity, small particle, and grain size.

Antiferromagnetic spintronics

Science.gov (United States)

Baltz, V.; Manchon, A.; Tsoi, M.; Moriyama, T.; Ono, T.; Tserkovnyak, Y.

2018-01-01

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

Investigation on structural, Mössbauer and ferroelectric properties of (1−x)PbFe{sub 0.5}Nb{sub 0.5}O{sub 3}–(x)BiFeO{sub 3} solid solution

Energy Technology Data Exchange (ETDEWEB)

Dadami, Sunanda T.; Matteppanavar, Shidaling; Shivaraja, I. [Department of Physics, JB Campus, Bangalore University, Bangalore 560056 (India); Rayaprol, Sudhindra [UGC-DAE-Consortium for Scientific Research, Mumbai Centre, BARC Campus, Mumbai 400085 (India); Angadi, Basavaraj, E-mail: brangadi@gmail.com [Department of Physics, JB Campus, Bangalore University, Bangalore 560056 (India); Sahoo, Balaram [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)

2016-11-15

In this study, (1−x)PbFe{sub 0.5}Nb{sub 0.5}O{sub 3}(PFN)–(x)BiFeO{sub 3}(BFO) multiferroic solid solutions with x=0.0, 0.1, 0.2, 0.3 and 0.4 were synthesized through single step solid state reaction method and characterized thoroughly through X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Fourier Transform Infra-Red (FTIR), Raman, Mössbauer spectroscopy and ferroelectric studies. The room temperature (RT) XRD studies confirmed the formation of single phase with negligible amount of secondary phases (x=0.2 and 0.4). The zoomed XRD patterns of (1−x)PFN–(x)BFO solid solutions showed the clear structural phase transition from monoclinic (Cm) to rhombohedral (R3c) at x=0.4. The Raman spectra of the (1−x)PFN–(x)BFO solid solutions showed the composition dependent phase transition from monoclinic (Cm) to rhombohedral (R3c). With increasing x in PFN, the modes related monoclinic symmetry changes to those of rhombohedral symmetry. The RT Mössbauer spectroscopy results evidenced the existence of composition dependent phase transition from paramagnetic to weak antiferromagnetic ordering and weak antiferromagnetic to antiferromagnetic ordering. The Mössbauer spectroscopy showed paramagnetic behavior with a doublet for x=0.0, 0.1 and 0.2 are shows the weak antiferromagnetic with paramagnetic ordering. For x=0.3 and 0.4 shows the sextet pattern and it is a clear evidence of antiferromagnetism. The ferroelectric (P–E) loops at RT indicate the presence of small polarization, as the x concentration increases in PFN, the remnant polarization and coercive field were decreased, which may due to the increase in the conductivity and leaky behavior of the samples. - Highlights: • Structural, Mössbauer, ferroelectric studies on (1−x)PFN–xBiFeO{sub 3} multiferroics. • Composition dependent changes in crystallographic and magnetic structure. • System exhibits phase transition from monoclinic to rhombohedral with x. • Supporting results from Raman

Pr and Gd co-doped bismuth ferrite thin films with enhanced ...

Indian Academy of Sciences (India)

in Pr content, the crystal structures of BPGFO thin films retain rhombohedral (R3c) symmetry accompanied by structure distortion. ... Pr and Gd co-modified BiFeO3 thin film; ferroelectric properties; sol-gel. 1. Introduction. In recent years, great attention has been paid to single- phase BiFeO3 (BFO) multiferroic materials ...

Photocatalytic performances of BiFeO3 particles with the average size in nanometer, submicrometer, and micrometer

International Nuclear Information System (INIS)

Hao, Chunxue; FushengWen,; Xiang, Jianyong; Hou, Hang; Lv, Weiming; Lv, Yifei; Hu, Wentao; Liu, Zhongyuan

2014-01-01

Highlights: • Three different synthesis routes have been taken to successfully prepare the BiFeO 3 particles with the different morphologies and average size in 50, 500 nm, and 15 μm. • For photodegradation of dyes under visible irradiation in the presence of BiFeO 3 , the photocatalytic efficiency increases quickly with the decrease in size. • The enhanced photocatalytic efficiency of BiFeO 3 nanoparticles may attribute to more surface active catalytic-sites and shorter distances carriers have to migrate to the surface reaction sites. - Abstract: Three different synthesis routes were taken to successfully prepare the BiFeO 3 particles with the different morphologies and average size in 50, 500 nm, and 15 μm, respectively. The crystal structure was recognized to be a distorted rhombohedral one with the space group R3c. With the decrease in particle size, obvious decrease in peak intensity and redshift in peak position were observed for the Raman active bands. The narrow band gap was determined from the UV–vis absorption spectra, indicating the semiconducting nature of the BiFeO 3 . For photodegradation of dyes under visible irradiation in the presence of BiFeO 3 , the photocatalytic efficiency increased quickly with the decrease in size which may attribute to more surface active catalytic-sites and shorter distances carriers had to migrate to the surface reaction sites

Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

KAUST Repository

Yao, Yingbang

2012-06-01

(001)-oriented BiFeO 3 (BFO) thin films were grown on Sr xCa 1-xRuO 3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO 3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.

Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

2014-01-01

Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

Control of oxygen octahedral rotation in BiFeO3 films using modulation of SrRuO3 bottom electrode layer

Science.gov (United States)

Lee, Sungsu; Jo, Ji Young

2015-03-01

Oxygen octahedral rotation of multiferroic BiFeO3 (BFO) has attracted great attention due to changes of electrical and magnetic properties. Coupling of octahedral rotation in BFO-bottom electrode layer interface remains unexplored. Recently, there have been reported the control of octahedral rotation in SrRuO3 (SRO) film on SrTiO3 (001) substrate by coherently controlling the oxygen pressure during growth and interfacial coupling. Here we demonstrate that the octahedral rotation of BFO film is changed using tetragonal a0a0c- tilted-SRO bottom electrodes. In this work, BFO/SRO heterostructure is fabricated to SrTiO3 (001) single crystal substrates by pulsed laser deposition at different oxygen partial pressures. The rotation pattern of FeO6 and the structural symmetry are identified from half-integer reflections using high-resolution X-ray diffraction. The effects depending on octahedral tilting of BFO films on the magnetic and ferroelectric properties will be presented.

Antiferromagnetic spintronics

KAUST Repository

Baltz, V.

2018-02-15

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and

Antiferromagnetic spintronics

KAUST Repository

Baltz, V.; Manchon, Aurelien; Tsoi, M.; Moriyama, T.; Ono, T.; Tserkovnyak, Y.

2018-01-01

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and

Bulk photovoltaic effect in epitaxial (K, Nb) substituted BiFeO3 thin films

Science.gov (United States)

Agarwal, Radhe; Zheng, Fan; Sharma, Yogesh; Hong, Seungbum; Rappe, Andrew; Katiyar, Ram

We studied the bulk photovoltaic effect in epitaxial (K, Nb) modified BiFeO3 (BKFNO) thin films using theoretical and experimental methods. Epitaxial BKFNO thin films were grown by pulsed laser deposition (PLD). First, we have performed first principles density function theory (DFT) using DFT +U method to calculate electronic band structure, including Hubbard-Ueff (Ueff =U-J) correction into Hamiltonian. The electronic band structure calculations showed a direct band gap at 1.9 eV and a defect level at 1.7 eV (in a 40 atom BKFNO supercell), sufficiently lower in comparison to the experimentally observed values. Furthermore, the piezoforce microscopy (PFM) measurements indicated the presence of striped polydomains in BKFNO thin films. Angle-resolved PFM measurements were also performed to find domain orientation and net polarization directions in these films. The experimental studies of photovoltaic effect in BKNFO films showed a short circuit current of 59 micro amp/cm2 and open circuit voltage of 0.78 V. We compared our experimental results with first principles shift current theory calculations of bulk photovoltaic effect (BPVE).The synergy between theory and experimental results provided a realization of significant role of BPVE in order to understand the photovoltaic mechanism in ferroelectrics.

Electric and Magnetic Properties of Sputter Deposited BiFeO3 Films

Directory of Open Access Journals (Sweden)

N. Siadou

2013-01-01

Full Text Available Polycrystalline BiFeO3 films have been magnetron sputter deposited at room temperature and subsequently heat-treated ex situ at temperatures between 400 and 700°C. The deposition was done in pure Ar atmosphere, as the use of oxygen-argon mixture was found to lead to nonstoichiometric films due to resputtering effects. At a target-to-substrate distance d=2′′ the BiFeO3 structure can be obtained in larger range process gas pressures (2–7 mTorr but the films do not show a specific texture. At d=6′′ codeposition from BiFeO3 and Bi2O3 has been used. Films sputtered at low rate tend to grow with the (001 texture of the pseudo-cubic BiFeO3 structure. As the film structure does not depend on epitaxy similar results are obtained on different substrates. A result of the volatility of Bi, Bi rich oxide phases occur after heat treatment at high temperatures. A Bi2SiO5 impurity phase forms on the substrate side, and does not affect the properties of the main phase. Despite the deposition on amorphous silicon oxide substrate weak ferromagnetism phenomena and displaced loops have been observed at low temperatures showing that their origin is not strain. Ba, La, Ca, and Sr doping suppress the formation of impurity phases and leakage currents.

Spintronics of antiferromagnetic systems

International Nuclear Information System (INIS)

Gomonaj, E.V.; Loktev, V.M.

2014-01-01

Spintronics of antiferromagnetics is a new field that has developed in a fascinating research topic in physics of magnetism. Antiferromagnetics, like ferromagnetic materials experience the influence of spin-polarized current, even though they show no macroscopic magnetization. The mechanism of this phenomenon is related to spin-dependent interaction between free and localized electrons-sd-exchange. Due to the peculiarities of antiferromagnetic materials (complicated magnetic structure, essential role of the exchange interactions, lack of macroscopic magnetization) spintronics of antiferromagnets appeals to new theoretical and experimental approaches. The purpose of this review is to systemize and summarize the recent progress in this field. We start with a short introduction into the structure and dynamics of antiferromagnets and proceed with discussion of different microscopic and phenomenological theories for description of current-induced phenomena in ferro-/antiferromagnetic heterostructures. We also consider the problems of the reverse influence of antiferromagnetic ordering on current, and effectiveness of the fully antiferromagnetic spin valve. In addition, we shortly review and interpret the available experimental results.

Photocatalytic and Magnetic Behaviors Observed in BiFeO3 Nanofibers by Electrospinning

Directory of Open Access Journals (Sweden)

Xuehui Zhang

2013-01-01

Full Text Available Perovskite-type BiFeO3 nanofibers with wave nodes-like morphology were prepared by electrospinning. The nanofibers show a highly enhanced visible-light-active photocatalytic property. The results also showed that the diameter could affect the band gap and photocatalytic performances of nanofibers. Additionally, weak ferromagnetic behaviors can be observed at room temperature, which should be correlated to the size-confinement effect on the magnetic ordering of BiFeO3 structure.

Transition metal modified bulk BiFeO3 with improved magnetization and linear magneto-electric coupling

International Nuclear Information System (INIS)

Puli, Venkata Sreenivas; Kumar, A.; Panwar, N.; Panwar, I.C.; Katiyar, R.S.

2011-01-01

Highlights: → Present composition (Bi 0.9 Sm 0.10 Fe 0.95 Co 0.05 O 3 (BSFCO) have shown very high magnetization compared to parent BFO. → The magnetic hysteresis loops are well saturated with high saturation magnetization 2.89 emu/gm (unpoled and unleached) and 2.18 emu/gm (poled and unleached) respectively. → Converse ME coupling were found 0.8e-10 s m -1 (H||E) and 0.6-0.8 x 10 -10 s m -1 (H-perpendicular E) which are better than the single phase multiferroic obeying linear ME coupling. - Abstract: At present BiFeO 3 (BFO) is the most attractive and sole example, which possesses low magnetization value, high leakage current and low polarization in ceramic form. Single-phase room temperature multiferroics are rare in nature. This paper deals with the improved magnetic and observed linear magneto-electric coupling in Co and Sm co-doped BiFeO 3 ceramics synthesized by sol-gel process at low temperature ∼600 deg. C. As synthesized Bi 0.9 Sm 0.10 Fe 0.95 Co 0.05 O 3 (BSFCO) showed high impurities phases (20%) over wide range of calcination temperatures. Impurity phases reduced drastically from 20% to 5% after leaching with nitric acid. However the electrical and the magnetic properties were almost the same for both phases. Well-defined magnetic hysteresis with high magnetic moment was found at room temperature. Ferroelectric polarization studies demonstrated similar values and shape as reported in literature for the pure bulk BFO. Linear magneto-electric (ME) coupling and weak ME coefficient (α) ∼ 0.6 e-10 s m -1 were observed in the co-doped BFO. The origin of the strong ferromagnetic property in our samples may be due to the presence of rare earth and transition metal ions at the lattice sites of BFO or due to impurity phase, since we have not seen any change in magnetization with reduction of impurity phase the later effect is more unlikely.

Polarized Raman study on the lattice structure of BiFeO3 films prepared by pulsed laser deposition

KAUST Repository

Yang, Yang; Yao, Yingbang; Zhang, Q.; Zhang, Xixiang

2014-01-01

Polarized Raman spectroscopy was used to study the lattice structure of BiFeO3 films on different substrates prepared by pulsed laser deposition. Interestingly, the Raman spectra of BiFeO3 films exhibit distinct polarization dependences

Two-dimensional ferroelectrics

Energy Technology Data Exchange (ETDEWEB)

Blinov, L M; Fridkin, Vladimir M; Palto, Sergei P [A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russian Federaion (Russian Federation); Bune, A V; Dowben, P A; Ducharme, Stephen [Department of Physics and Astronomy, Behlen Laboratory of Physics, Center for Materials Research and Analysis, University of Nebraska-Linkoln, Linkoln, NE (United States)

2000-03-31

The investigation of the finite-size effect in ferroelectric crystals and films has been limited by the experimental conditions. The smallest demonstrated ferroelectric crystals had a diameter of {approx}200 A and the thinnest ferroelectric films were {approx}200 A thick, macroscopic sizes on an atomic scale. Langmuir-Blodgett deposition of films one monolayer at a time has produced high quality ferroelectric films as thin as 10 A, made from polyvinylidene fluoride and its copolymers. These ultrathin films permitted the ultimate investigation of finite-size effects on the atomic thickness scale. Langmuir-Blodgett films also revealed the fundamental two-dimensional character of ferroelectricity in these materials by demonstrating that there is no so-called critical thickness; films as thin as two monolayers (1 nm) are ferroelectric, with a transition temperature near that of the bulk material. The films exhibit all the main properties of ferroelectricity with a first-order ferroelectric-paraelectric phase transition: polarization hysteresis (switching); the jump in spontaneous polarization at the phase transition temperature; thermal hysteresis in the polarization; the increase in the transition temperature with applied field; double hysteresis above the phase transition temperature; and the existence of the ferroelectric critical point. The films also exhibit a new phase transition associated with the two-dimensional layers. (reviews of topical problems)

Pressure-induced phase transitions of multiferroic BiFeO3

International Nuclear Information System (INIS)

Zhang Xiaoli; Dong Juncai; Liu Jing; Chen Dongliang; Wu Ye; Zhang Qian; Wu Xiang; Wu Ziyu

2013-01-01

Pressure-induced phase transitions of multiferroic BiFeO 3 have been investigated using synchrotron radiation X-ray diffraction with diamond anvil cell technique at room temperature. Present experimental data clearly show that rhombohedral (R3c) phase of BiFeO 3 first transforms to monoclinic (C2/m) phase at 7 GPa, then to orthorhombic (Pnma) phase at 11 GPa, which is consistent with recent theoretical ab initio calculation. However, we observe another peak at 2θ=7° in the pressure range of 5-7 GPa that has not been reported previously. Further analysis reveals that this reflection peak is attributed to the orthorhombic (Pbam) phase, indicating the coexistence of monoclinic phase with orthorhombic phase in low pressure range. (authors)

Perspectives of antiferromagnetic spintronics

Science.gov (United States)

Jungfleisch, Matthias B.; Zhang, Wei; Hoffmann, Axel

2018-04-01

Antiferromagnets are promising for future spintronic applications owing to their advantageous properties: They are magnetically ordered, but neighboring magnetic moments point in opposite directions, which results in zero net magnetization. This means antiferromagnets produce no stray fields and are insensitive to external magnetic field perturbations. Furthermore, they show intrinsic high frequency dynamics, exhibit considerable spin-orbit and magneto-transport effects. Over the past decade, it has been realized that antiferromagnets have more to offer than just being utilized as passive components in exchange bias applications. This development resulted in a paradigm shift, which opens the pathway to novel concepts using antiferromagnets for spin-based technologies and applications. This article gives a broad perspective on antiferromagnetic spintronics. In particular, the manipulation and detection of antiferromagnetic states by spintronics effects, as well as spin transport and dynamics in antiferromagnetic materials will be discussed. We will also outline current challenges and future research directions in this emerging field.

Electric control of antiferromagnets

OpenAIRE

Fina, I.; Marti, X.

2016-01-01

In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and probe the magnetic moments in antiferromagnets have been gradually established a new and independent field known as antiferromagnetic spintronics. In this paper, we focus on the electrical control and detection of antiferromagnetic moments at a constant tem...

Magnetic ordering induced giant optical property change in tetragonal BiFeO3

Science.gov (United States)

Tong, Wen-Yi; Ding, Hang-Chen; Gong, Shi Jing; Wan, Xiangang; Duan, Chun-Gang

2015-12-01

Magnetic ordering could have significant influence on band structures, spin-dependent transport, and other important properties of materials. Its measurement, especially for the case of antiferromagnetic (AFM) ordering, however, is generally difficult to be achieved. Here we demonstrate the feasibility of magnetic ordering detection using a noncontact and nondestructive optical method. Taking the tetragonal BiFeO3 (BFO) as an example and combining density functional theory calculations with tight-binding models, we find that when BFO changes from C1-type to G-type AFM phase, the top of valance band shifts from the Z point to Γ point, which makes the original direct band gap become indirect. This can be explained by Slater-Koster parameters using the Harrison approach. The impact of magnetic ordering on band dispersion dramatically changes the optical properties. For the linear ones, the energy shift of the optical band gap could be as large as 0.4 eV. As for the nonlinear ones, the change is even larger. The second-harmonic generation coefficient d33 of G-AFM becomes more than 13 times smaller than that of C1-AFM case. Finally, we propose a practical way to distinguish the two AFM phases of BFO using the optical method, which is of great importance in next-generation information storage technologies.

Non-linear thermal evolution of the crystal structure and phase transitions of LaFeO3 investigated by high temperature X-ray diffraction

International Nuclear Information System (INIS)

Selbach, Sverre M.; Tolchard, Julian R.; Fossdal, Anita; Grande, Tor

2012-01-01

The crystal structure, anisotropic thermal expansion and structural phase transition of the perovskite LaFeO 3 has been studied by high-temperature X-ray diffraction from room temperature to 1533 K. The structural evolution of the orthorhombic phase with space group Pbnm and the rhombohedral phase with R3 ¯ c structure of LaFeO 3 is reported in terms of lattice parameters, thermal expansion coefficients, atomic positions, octahedral rotations and polyhedral volumes. Non-linear lattice expansion across the antiferromagnetic to paramagnetic transition of LaFeO 3 at T N =735 K was compared to the corresponding behavior of the ferroelectric antiferromagnet BiFeO 3 to gain insight to the magnetoelectric coupling in BiFeO 3 , which is also multiferroic. The first order phase transition of LaFeO 3 from Pbnm to R3 ¯ c was observed at 1228±9 K, and a subsequent transition to Pm3 ¯ m was extrapolated to occur at 2140±30 K. The stability of the Pbnm and R3 ¯ c polymorphs of LaFeO 3 is discussed in terms of the competing enthalpy and entropy of the two crystal polymorphs and the thermal evolution of the polyhedral volume ratio V A /V B . - Graphical abstract: Aniostropic thermal evolution of the lattice parameters and phase transition of LaFeO 3 . Highlights: ► The crystal structure of LaFeO 3 is studied by HTXRD from RT to 1533 K. ► A non-linear expansion across the Néel temperature is observed for LaFeO 3 . ► The ratio V A /V B is used to rationalize the thermal evolution of the structure.

Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

KAUST Repository

Jungwirth, T.

2017-05-30

This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets.

Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

KAUST Repository

Jungwirth, T.; Sinova, J.; Manchon, Aurelien; Marti, X.; Wunderlich, J.; Felser, C.

2017-01-01

This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets.

Magnetic and ferroelectric properties of Fe doped SrTiO{sub 3-{delta}} films

Energy Technology Data Exchange (ETDEWEB)

Kumar, A Sendil; Suresh, P; Srinath, S [School of Physics, University of Hyderabad, Hyderabad, 500 046 (India); Kumar, M Mahesh; Post, M L [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, ON, K1A 0R6 (Canada); Srikanth, H [Materials Physics Laboratory, Department of Physics, University of South Florida, Tampa, Florida, 33620 (United States); Sahner, Kathy; Moos, Ralf, E-mail: sssp@uohyd.ernet.i [Functional Materials, University of Bayreuth, 95447, Bayreuth (Germany)

2010-01-01

Recent interest in SrTiO{sub 3} stems from its wide applicability in microwave devices based on the tunable characteristics of dielectric constant in the microwave frequency range. It is obvious that for any such application, SrTiO{sub 3} should have a ferroelectric Curie temperature (T{sub C}) close to room temperature or higher. By inducing strains by chemical substitutions, it was possible to obtain T{sub C} as high as 200{sup 0}C in SrTiO{sub 3} modified with Fe{sup 4+}. Hysteresis loops obtained confirms the presence of ferroelectric domains. Two apparent transitions, one at {approx}200 {sup 0}C and another {approx}300 {sup 0}C were seen in {epsilon}', which are replicated as sharp drops in resistivity curves. These temperatures far exceed the T{sub C}s reported in the literature till now and could open new avenues for innumerable other applications for SrTiO{sub 3}. The magnetic properties of Fe doped SrTiO{sub 3} are also investigated. Low doping of Fe exhibits simple antiferromagnetic behaviour.

Perspectives of antiferromagnetic spintronics

Energy Technology Data Exchange (ETDEWEB)

Jungfleisch, Matthias B.; Zhang, Wei; Hoffmann, Axel

2018-04-01

Antiferromagnets are promising for future spintronics applications owing to their interesting properties: They are magnetically ordered, but neighboring magnetic moments point in opposite directions which results in zero net magneti- zation. This means antiferromagnets produce no stray fields and are insensitive to external magnetic field perturbations. Furthermore, they show intrinsic high frequency dynamics, exhibit considerable spin-orbit and magneto-transport effects. Over the past decade, it has been realized that antiferromagnets have more to offer than just being utilized as passive components in exchange bias applications. This development resulted in a paradigm shift, which opens the pathway to novel concepts using antiferromagnets for spin-based technologies and applications. This article gives a broad per- spective on antiferromagnetic spintronics. In particular, the manipulation and detection of anitferromagnetic states by spintronics effects, as well as spin transport and dynamics in antiferromagnetic materials will be discussed. We will also outline current challenges and future research directions in this emerging field.

Synthesis of BiFeO 3 by carbonate precipitation

Indian Academy of Sciences (India)

Magnetoelectric multiferroic BiFeO3 (BFO) was synthesized by a simple carbonate precipitation technique of metal nitrate solutions. X-ray powder diffraction and thermo-gravimetric analysis (TGA) revealed that the precipitate consists of an intimate mixture of crystalline bismuth carbonate and an amorphous hydroxide of ...

A note on structural and dielectric properties of BiFeO3- PbTiO3 and BiFeO3- PbZrO3 composites

International Nuclear Information System (INIS)

Satpathy, S. K.; Mohanty, N. K.; Behera, A. K.; Behera, B.; Nayak, P.

2015-01-01

The composites of BiFeO 3 -PbTiO 3 (BF-PT) and BiFeO 3 -PbZrO 3 (BF-PZ) were prepared by mixed oxide method. Room temperature X-ray diffraction data confirms the rhombohedral and tetragonal crystal structure respectively. Dielectric constant of BF-PZ is found to give high value compared to BF-PT and hence, there is an increase value of ac conductivity for the former. Both the composites show negative temperature coefficient of resistance (NTCR) behavior. The activation energies of BF-PT and BF-PZ are found to be 0.35 eV and 0.53 eV respectively. The d 33 coefficients are found to be 2.0 and 2.1 pC/N for BF-PT and BF-PZ respectively

Unidirectional THz radiation propagation in BiFeO3

Science.gov (United States)

Room, Toomas

The mutual coupling between magnetism and electricity present in many multiferroic materials permit the magnetic control of the electric polarization and the electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to write a magnetic state current-free by an electric voltage would provide a huge technological advantage. However, ME coupling changes the low energy electrodynamics of these materials in unprecedented way - optical ME effects give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. The transparent direction can be switched with dc magnetic or electric field, thus opening up new possibilities to manipulate the propagation of electromagnetic waves in multiferroic materials. We studied the unidirectional transmission of THz radiation in BiFeO3 crystals, the unique multiferroic compound offering a real potential for room temperature applications. The electrodynamics of BiFeO3 at 1THz and below is dominated by the spin wave modes of cycloidal spin order. We found that the optical magnetoelectric effect generated by spin waves in BiFeO3 is robust enough to cause considerable nonreciprocal directional dichroism in the GHz-THz range even at room temperature. The supporting theory attributes the observed unidirectional transmission to the spin-current-driven dynamic ME effect. Our work demonstrates that the nonreciprocal directional dichroism spectra of low energy excitations and their theoretical analysis provide microscopic model of ME couplings in multiferroic materials. Recent THz spectroscopy studies of multiferroic materials are an important step toward the realization of optical diodes, devices which transmit light in one but not in the opposite direction.

Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO3 Ultrathin Films

Directory of Open Access Journals (Sweden)

Chuanwei Huang

2014-07-01

Full Text Available In functional oxide films, different electrical/mechanical boundaries near film surfaces induce rich phase diagrams and exotic phenomena. In this paper, we review some key points which underpin structure, phase transition and related properties in BiFeO3 ultrathin films. Compared with the bulk counterparts, we survey the recent results of epitaxial BiFeO3 ultrathin films to illustrate how the atomic structure and phase are markedly influenced by the interface between the film and the substrate, and to emphasize the roles of misfit strain and depolarization field on determining the domain patterns, phase transformation and associated physical properties of BiFeO3 ultrathin films, such as polarization, piezoelectricity, and magnetism. One of the obvious consequences of the misfit strain on BiFeO3 ultrathin films is the emergence of a sequence of phase transition from tetragonal to mixed tetragonal & rhombohedral, the rhombohedral, mixed rhombohedral & orthorhombic, and finally orthorhombic phases. Other striking features of this system are the stable domain patterns and the crossover of 71° and 109° domains with different electrical boundary conditions on the film surface, which can be controlled and manipulated through the depolarization field. The external field-sensitive enhancements of properties for BiFeO3 ultrathin films, including the polarization, magnetism and morphotropic phase boundary-relevant piezoelectric response, offer us deeper insights into the investigations of the emergent properties and phenomena of epitaxial ultrathin films under various mechanical/electrical constraints. Finally, we briefly summarize the recent progress and list open questions for future study on BiFeO3 ultrathin films.

Magnetoelectric effect in antiferromagnetic multiferroic Pb(Fe.sub.1/2./sub. N b.sub.1/2./sub.)O.sub.3./sub. and its solid solutions with PbTi O.sub.3./sub.

Czech Academy of Sciences Publication Activity Database

Laguta, Valentyn; Stephanovich, V. A.; Raevski, I. P.; Raevskaya, S. I.; Titov, V.V.; Smotrakov, V. G.; Eremkin, V. V.

2017-01-01

Roč. 95, č. 1 (2017), 1-13, č. článku 014207. ISSN 1098-0121 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088; GA ČR GA13-11473S Institutional support: RVO:68378271 Keywords : multiferroic * antiferromagnetic * ferroelectrics * magnetoelectric effect * Landau theory Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)

Ferroelectric switching of elastin

Science.gov (United States)

Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

2014-01-01

Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

Science.gov (United States)

Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

2018-02-01

Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

Molecular ferroelectrics: where electronics meet biology.

Science.gov (United States)

Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

2013-12-28

In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

Ferroelectrics principles, structure and applications

CERN Document Server

Merchant, Serena

2014-01-01

Ferroelectric physics is a theory on ferroelectric phase transition for explaining various related phenomena, which is different from dielectric physics. Ferroelectric materials are important functional materials for various applications such as NVRAMs, high energy density capacitors, actuators, MEMs, sonar sensors, microphones and scanning electron microscopes (SEM). This book investigates the dielectric, ferroelectric and energy storage properties of barium zirconate-titanate/barium calcium-titanate (BZT-BCT) based ceramic for high energy density capacitors. It also compares the energy storage capabilities of ceramic powders with polymer-ceramic nanocomposites; and discusses dielectric properties of ferroelectricity in composition distributions.

Antiferromagnetic skyrmions

Science.gov (United States)

Tretiakov, Oleg; Barker, Joseph

Skyrmions are topologically protected entities in magnetic materials which have the potential to be used in spintronics for information storage and processing. However, skyrmions in ferromagnets have some intrinsic difficulties which must be overcome to use them for spintronic applications, such as the inability to move straight along current. We show that skyrmions can also be stabilized and manipulated in antiferromagnetic materials. An antiferromagnetic skyrmion is a compound topological object with a similar but of opposite sign spin texture on each sublattice, which e.g. results in a complete cancelation of the Magnus force. We find that the composite nature of antiferromagnetic skyrmions gives rise to different dynamical behavior, both due to an applied current and temperature effects. O.A.T. and J.B. acknowledge support by the Grants-in-Aid for Scientific Research (Nos. 25800184, 25247056, 25220910 and 15H01009) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan and SpinNet.

Study of magnetization and magnetoelectricity in CoFe2O4/BiFeO3 core-shell composites

Science.gov (United States)

Kuila, S.; Tiwary, Sweta; Sahoo, M. R.; Barik, A.; Babu, P. D.; Siruguri, V.; Birajdar, B.; Vishwakarma, P. N.

2018-02-01

CoFe2O4 (core)/BiFeO3 (shell) nanoparticles are prepared by varying the relative molar concentration of core and shell materials (40%CoFe2O4-60%BiFeO3, 50%CoFe2O4-50%BiFeO3, and 60%CoFe2O4-40%BiFeO3). The core-shell nature is confirmed from transmission electron microscopy on these samples. A plot of ΔM (=MFC-MZFC) vs temperature suggests the presence of two types of spin dynamics: (a) particle size dependent spin blocking and (b) spin-disorder. These two spin dynamic processes are found to contribute independently to the generation of magnetoelectric voltage. Very clear first order and second order magnetoelectric voltages are recorded. The resemblance of the first order magnetoelectric coefficient vs temperature plot to that of building up of order parameters in the mean field theory suggests that spin disorder can act like one of the essential ingredients in building the magnetoelectric coupling. The best result is obtained for the 50-50 composition sample, which may be due to better coupling of magnetostrictive CoFe2O4, and piezoelectric BiFeO3, because of the optimum thickness of shell and core.

Exchange bias in diluted-antiferromagnet/antiferromagnet bilayers

International Nuclear Information System (INIS)

Mao, Zhongquan; Zhan, Xiaozhi; Chen, Xi

2015-01-01

The hysteresis-loop properties of a diluted-antiferromagnetic (DAF) layer exchange coupling to an antiferromagnetic (AF) layer are investigated by means of numerical simulations. Remarkable loop shift and coercivity enhancement are observed in such DAF/AF bilayers, while they are absent in the uncoupled DAF single layer. The influences of pinned domains, dilution, cooling field and DAF layer thickness on the loop shift are investigated systematically. The result unambiguously confirms an exchange bias (EB) effect in the DAF/AF bilayers. It also reveals that the EB effect originates from the pinned AF domains within the DAF layer. In contrast to conventional EB systems, frozen uncompensated spins are not found at the interface of the AF pinning layer. (paper)

Polar-antipolar transition and weak ferromagnetism in Mn-doped Bi0.86La0.14FeO3

Science.gov (United States)

Khomchenko, V. A.; Karpinsky, D. V.; Troyanchuk, I. O.; Sikolenko, V. V.; Többens, D. M.; Ivanov, M. S.; Silibin, M. V.; Rai, R.; Paixão, J. A.

2018-04-01

Having been considered as a prime example of a room-temperature magnetoelectric multiferroic, BiFeO3 continues to attract much interest. Since functional properties of this material can be effectively influenced by chemical, electrical, magnetic, mechanical and thermal stimuli, it can serve as a model for the investigation of cross-coupling phenomena in solids. Special attention is currently paid to the study of chemical pressure-driven magneto-structural transformations. In this paper, we report on the effect of the Mn doping on the crystal structure and magnetic behavior of the Bi1‑x La x FeO3 multiferroics near their polar-antipolar (antiferromagnetic-weak ferromagnetic) phase boundary. Synchrotron x-ray and neutron powder diffraction measurements of the Bi0.86La0.14Fe1‑x Mn x O3 (x  =  0.05, 0.1, 0.15) compounds have been performed. The diffraction data suggest that the Mn substitution results in the suppression of the ferroelectric polarization and gives rise to the appearance of the antiferroelectric (generally, PbZrO3-related) phase characteristic of the phase diagrams of the Bi1‑x RE x FeO3 (RE  =  rare-earth) systems. Depending on the Mn concentration (determining phase composition of the Bi0.86La0.14Fe1‑x Mn x O3 samples at room temperature), either complete or partial revival of the polar phase can be observed with increasing temperature. Magnetic measurements of the samples indicate that the Mn doping affects the stability of the cycloidal antiferromagnetic order specific to the polar phase, thus resulting in the formation of a ferroelectric and weak ferromagnetic state.

Enhanced antiferromagnetic coupling in dual-synthetic antiferromagnet with Co2FeAl electrodes

International Nuclear Information System (INIS)

Zhang, D.L.; Xu, X.G.; Wu, Y.; Li, X.Q.; Miao, J.; Jiang, Y.

2012-01-01

We study dual-synthetic antiferromagnets (DSyAFs) using Co 2 FeAl (CFA) Heusler electrodes with a stack structure of Ta/CFA/Ru/CFA/Ru/CFA/Ta. When the thicknesses of the two Ru layers are 0.45 nm, 0.65 nm or 0.45 nm, 1.00 nm, the CFA-based DSyAF has a strong antiferromagnetic coupling between adjacent CFA layers at room temperature with a saturation magnetic field of ∼11,000 Oe, a saturation magnetization of ∼710 emu/cm 3 and a coercivity of ∼2.0 Oe. Moreover, the DSyAF has a good thermal stability up to 400 °C, at which CFA films show B2-ordered structure. Therefore, the CFA-based DSyAFs are favorable for applications in future spintronic devices. - Graphical abstract: Display Omitted Highlights: ► Co 2 FeAl can be applied in room temperature dual-synthetic antiferromagnets. ► Co 2 FeAl dual-synthetic antiferromagnets have a good thermal stability up to 400 °C. ► The Co 2 FeAl has B2-ordered structure in annealed dual-synthetic antiferromagnets.

Spin reorientation via antiferromagnetic coupling

Energy Technology Data Exchange (ETDEWEB)

Ranjbar, M., E-mail: mojtaba.ranjbar@physics.gu.se [Data Storage Institute, A-STAR (Agency for Science, Technology and Research), 5, Engineering Drive 1, Singapore 117608 (Singapore); Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Sbiaa, R. [Data Storage Institute, A-STAR (Agency for Science, Technology and Research), 5, Engineering Drive 1, Singapore 117608 (Singapore); Department of Physics, Sultan Qaboos University, P.O. Box 36, PC 123, Muscat (Oman); Dumas, R. K. [Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Åkerman, J. [Department of Physics, University of Gothenburg, 412 96 Gothenburg (Sweden); Materials Physics, School of ICT, Royal Institute of Technology (KTH), 164 40 Kista (Sweden); Piramanayagam, S. N. [Data Storage Institute, A-STAR (Agency for Science, Technology and Research), 5, Engineering Drive 1, Singapore 117608 (Singapore)

2014-05-07

Spin reorientation in antiferromagnetically coupled (AFC) Co/Pd multilayers, wherein the thickness of the constituent Co layers was varied, was studied. AFC-Co/Pd multilayers were observed to have perpendicular magnetic anisotropy even for a Co sublayer thickness of 1 nm, much larger than what is usually observed in systems without antiferromagnetic coupling. When similar multilayer structures were prepared without antiferromagnetic coupling, this effect was not observed. The results indicate that the additional anisotropy energy contribution arising from the antiferromagnetic coupling, which is estimated to be around 6 × 10{sup 6} ergs/cm{sup 3}, induces the spin-reorientation.

Síntese e caracterização de perovesquites do sistema BiFeO3

OpenAIRE

Carvalho, Teresa Maria Tranchete de

2007-01-01

Dissertação de Mestrado em Física e Química para o Ensino, apresentada à Universidade de Trás-os-Montes e Alto Douro Os materiais multiferróicos, como o caso do BiFeO3, são bastante promissores em termos tecnológicos, possuindo uma potencial aplicação em sensores, memórias não voláteis e actuadores. A perovesquite BiFeO3 apresenta vantagens relativamente a outros compostos multiferróicos: elevada temperatura de Curie (TC=1100 K); elevada temperatura de Néel (TN=640 K); não contém chumbo...

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-01-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-11-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Losses in Ferroelectric Materials

Science.gov (United States)

Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

2015-01-01

Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

Losses in Ferroelectric Materials.

Science.gov (United States)

Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

2015-03-01

Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

Multiferroicity in an organic charge-transfer salt that is suggestive of electric-dipole-driven magnetism

Science.gov (United States)

Lunkenheimer, Peter; Müller, Jens; Krohns, Stephan; Schrettle, Florian; Loidl, Alois; Hartmann, Benedikt; Rommel, Robert; de Souza, Mariano; Hotta, Chisa; Schlueter, John A.; Lang, Michael

2012-09-01

Multiferroics, showing simultaneous ordering of electrical and magnetic degrees of freedom, are remarkable materials as seen from both the academic and technological points of view. A prominent mechanism of multiferroicity is the spin-driven ferroelectricity, often found in frustrated antiferromagnets with helical spin order. There, as for conventional ferroelectrics, the electrical dipoles arise from an off-centre displacement of ions. However, recently a different mechanism, namely purely electronic ferroelectricity, where charge order breaks inversion symmetry, has attracted considerable interest. Here we provide evidence for ferroelectricity, accompanied by antiferromagnetic spin order, in a two-dimensional organic charge-transfer salt, thus representing a new class of multiferroics. We propose a charge-order-driven mechanism leading to electronic ferroelectricity in this material. Quite unexpectedly for electronic ferroelectrics, dipolar and spin order arise nearly simultaneously. This can be ascribed to the loss of spin frustration induced by the ferroelectric ordering. Hence, here the spin order is driven by the ferroelectricity, in marked contrast to the spin-driven ferroelectricity in helical magnets.

Ferroelectricity at the nanoscale basics and applications

CERN Document Server

Fridkin, Vladimir

2014-01-01

This book examines a wide range of ferroelectric materials. It explains the theoretical background of ultrathin ferroelectric films,  presents applications of ferroelectric materials, and displays the mechanism of switching of nanosized ferroelectric films.

How to manipulate magnetic states of antiferromagnets

Science.gov (United States)

Song, Cheng; You, Yunfeng; Chen, Xianzhe; Zhou, Xiaofeng; Wang, Yuyan; Pan, Feng

2018-03-01

Antiferromagnetic materials, which have drawn considerable attention recently, have fascinating features: they are robust against perturbation, produce no stray fields, and exhibit ultrafast dynamics. Discerning how to efficiently manipulate the magnetic state of an antiferromagnet is key to the development of antiferromagnetic spintronics. In this review, we introduce four main methods (magnetic, strain, electrical, and optical) to mediate the magnetic states and elaborate on intrinsic origins of different antiferromagnetic materials. Magnetic control includes a strong magnetic field, exchange bias, and field cooling, which are traditional and basic. Strain control involves the magnetic anisotropy effect or metamagnetic transition. Electrical control can be divided into two parts, electric field and electric current, both of which are convenient for practical applications. Optical control includes thermal and electronic excitation, an inertia-driven mechanism, and terahertz laser control, with the potential for ultrafast antiferromagnetic manipulation. This review sheds light on effective usage of antiferromagnets and provides a new perspective on antiferromagnetic spintronics.

Multiferroic and magnetoelectric materials – Developments and perspectives

Directory of Open Access Journals (Sweden)

Shvartsman V. V.

2012-06-01

Full Text Available Multiferroic (MF materials with simultaneous magnetic and electric long range order and occasionally, mutual magnetoelectric (ME coupling, have recently attracted considerable interest. The small linear ME effect has been shown to control spintronic devices very efficiently, e.g. via the classic ME antiferromagnet Cr2O3 using exchange bias. Similar nano-engineering concepts exist also for type-I MF single phase materials, whose magnetic and polar orders have distinct origins like BiFeO3. Strong ME coupling occurs in type-II multiferroics, where ferroelectricity is due to spiral spin order as in TbMnO3. Record high ME response coming close to applicability arises in stress-strain coupled multiphase magnetoelectrics such as PZT/FeBSiC composites. Higher order ME response in disordered systems (“type-III multiferroics” extends the conventional MF scenario toward ME quantum paraelectric and multiglass materials with polarization-induced control of magnetic exchange, as e.g. in EuTiO3, Sr0.98Mn0.02TiO3, and PbFe0.5Nb0.5O3.

Accuracy and Transferability of Ab Initio Electronic Band Structure Calculations for Doped BiFeO3

Science.gov (United States)

Gebhardt, Julian; Rappe, Andrew M.

2017-11-01

BiFeO3 is a multiferroic material and, therefore, highly interesting with respect to future oxide electronics. In order to realize such devices, pn junctions need to be fabricated, which are currently impeded by the lack of successful p-type doping in this material. In order to guide the numerous research efforts in this field, we recently finished a comprehensive computational study, investigating the influence of many dopants onto the electronic structure of BiFeO3. In order to allow for this large scale ab initio study, the computational setup had to be accurate and efficient. Here we discuss the details of this assessment, showing that standard density-functional theory (DFT) yields good structural properties. The obtained electronic structure, however, suffers from well-known shortcomings. By comparing the conventional DFT results for alkali and alkaline-earth metal doping with more accurate hybrid-DFT calculations, we show that, in this case, the problems of standard DFT go beyond a simple systematic error. Conventional DFT shows bad transferability and the more reliable hybrid-DFT has to be chosen for a qualitatively correct prediction of doping induced changes in the electronic structure of BiFeO3.

Ferroelectric devices

CERN Document Server

Uchino, Kenji

2009-01-01

Updating its bestselling predecessor, Ferroelectric Devices, Second Edition assesses the last decade of developments-and setbacks-in the commercialization of ferroelectricity. Field pioneer and esteemed author Uchino provides insight into why this relatively nascent and interdisciplinary process has failed so far without a systematic accumulation of fundamental knowledge regarding materials and device development.Filling the informational void, this collection of information reviews state-of-the-art research and development trends reflecting nano and optical technologies, environmental regulat

Spin diffusion and torques in disordered antiferromagnets

KAUST Repository

Manchon, Aurelien

2017-02-01

We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

Spin diffusion and torques in disordered antiferromagnets

KAUST Repository

Manchon, Aurelien

2017-01-01

We have developed a drift-diffusion equation of spin transport in collinear bipartite metallic antiferromagnets. Starting from a model tight-binding Hamiltonian, we obtain the quantum kinetic equation within Keldysh formalism and expand it to the lowest order in spatial gradient using Wigner expansion method. In the diffusive limit, these equations track the spatio-temporal evolution of the spin accumulations and spin currents on each sublattice of the antiferromagnet. We use these equations to address the nature of the spin transfer torque in (i) a spin-valve composed of a ferromagnet and an antiferromagnet, (ii) a metallic bilayer consisting of an antiferromagnet adjacent to a heavy metal possessing spin Hall effect, and in (iii) a single antiferromagnet possessing spin Hall effect. We show that the latter can experience a self-torque thanks to the non-vanishing spin Hall effect in the antiferromagnet.

Spin transport and spin torque in antiferromagnetic devices

Science.gov (United States)

Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

2018-03-01

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Ferroelectric ultrathin perovskite films

Science.gov (United States)

Rappe, Andrew M; Kolpak, Alexie Michelle

2013-12-10

Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film

Energy Technology Data Exchange (ETDEWEB)

Kim, Woo Young, E-mail: semigumi@kaist.ac.kr [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Lee, Hee Chul [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2015-09-30

Ferroelectricity refers to the property of a dielectric material to undergo spontaneous polarization which originates from the crystalline phase. Hence, ferroelectric materials have a certain degree of surface roughness when they are formed as a thin film. A high degree of surface roughness may cause unintended phenomena when the ferroelectric material is used in electronic devices. Specifically, the quality of subsequently deposited film could be affected by the rough surface. The present study reports that the surface roughness of ferroelectric polymer film can be reduced by a double-spin-coating method of a solution, with control of the solubility of the solution. At an identical thickness of 350 nm, double-spin-coated ferroelectric film has a root-mean-square roughness of only 3 nm, while for single-spin-coated ferroelectric film this value is approximately 16 nm. A ferroelectric-gated field-effect transistor was fabricated using the proposed double-spin-coating method, showing a maximum saturation mobility as much as seven-fold than that of a transistor fabricated with single-spin-coated ferroelectric film. The enhanced saturation mobility could be explained by the Poole–Frenkel conduction mechanism. The proposed method to reduce the surface roughness of ferroelectric film would be useful for high performance organic electronic devices, including crystalline-phase dielectric film. - Highlights: • Single and double-layer solution-processed polymer ferroelectric films were obtained. • Adjusting the solvent solubility allows making double-layer ferroelectric (DF) films. • The DF film has a smoother surface than single-layer ferroelectric (SF) film. • DF-gated transistor has faster saturation mobility than SF-based transistor. • Solvent solubility adjustment led to higher performance organic devices.

Ferroelectric Negative Capacitance Domain Dynamics

OpenAIRE

Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

2017-01-01

Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transien...

Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates

International Nuclear Information System (INIS)

Chen Xinman; Zhang Hu; Ruan Kaibin; Shi Wangzhou

2012-01-01

Highlights: ► Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films with Pt/BiFeO 3 /LNO was reported. ► Rectification property was explained from the asymmetrical contact between top and bottom interfaces and the distinct oxygen vacancy density. ► The modification of Schottky-like barrier was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices. - Abstract: We reported the annealing effect on the electrical behaviors of BiFeO 3 thin films integrated on LaNiO 3 (LNO) layers buffered Si substrates by sol–gel spin-coating technique. All the BiFeO 3 thin films exhibit the reversible bipolar resistive switching behaviors with Pt/BiFeO 3 /LNO configuration. The electrical conduction mechanism of the devices was dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. Good diode-like rectification property was observed in device with BiFeO 3 film annealed at 500 °C, but vanished in device with BiFeO 3 film annealed at 600 °C. This was attributed to the asymmetrical contact between top and bottom interfaces as well as the distinct oxygen vacancy density verified by XPS. Furthermore, the modification of Schottky-like barrier due to the drift of oxygen vacancies was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices.

Ferroelectric materials and their applications

CERN Document Server

Xu, Y

2013-01-01

This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable

Influence of the collector and heat treatment in the structure of BiFeO_3 electrospun nanofibers

International Nuclear Information System (INIS)

Melo, G.H.F.; Santos, J.P.F.; Bretas, R.E.S.

2016-01-01

The objective of this work was to analyze the influence of the collector type and heat treatment on the morphology and crystalline phases of BiFeO_3 electrospun nanofibers. A solution containing (Fe(NO_3)_3_._9H_2O and Bi(NO_3)_3_._5H_2O) as precursors together with a polyvinylpyrrolidone solution was electrospun using 2.8KV/cm as electrical field. The collector type was however, changed (aluminum and glass). After the electrospinning, the as-spun nanofibers were submitted to two different heat treatments: one at 550°C and the other at 750°C, both during 2h. The collector type changed the morphology of the nanofibers; while in the glass collector, a non-woven mat of flat and rough nanofibers was obtained, in the aluminum collector, mats of circular and smooth nanofibers were obtained. The thermal treatment also changed the morphology and amount of crystalline phases; at 550°C, the nanofiber morphology was maintained and only one crystalline phase (BiFeO_3) was detected. On the other hand, at 750°C, flakes were obtained of two crystalline phases (BiFeO_3 and Bi_2Fe_4O_9). (author)

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2017-04-18

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

Antiferromagnetic resonance excited by oscillating electric currents

Science.gov (United States)

Sluka, Volker

2017-12-01

In antiferromagnetic materials the order parameter exhibits resonant modes at frequencies that can be in the terahertz range, making them interesting components for spintronic devices. Here, it is shown that antiferromagnetic resonance can be excited using the inverse spin-Hall effect in a system consisting of an antiferromagnetic insulator coupled to a normal-metal waveguide. The time-dependent interplay between spin torque, ac spin accumulation, and magnetic degrees of freedom is studied. It is found that the dynamics of the antiferromagnet affects the frequency-dependent conductivity of the normal metal. Further, a comparison is made between spin-current-induced and Oersted-field-induced excitation under the condition of constant power injection.

Ferroelectric Electron Emission Principles and Technology

CERN Document Server

Riege, H

1997-01-01

The spontaneous electrical polarization of ferroelectric materials can be changed either by reversal or by phase transition from a ferroelectric into a non-ferroelectric state or vice versa. If spontaneous polarization changes are induced with fast heat, mechanical pressure, laser or electric field pulses on a submicrosecond time scale, strong uncompensated surface charge densities and related polarization fields are generated, which may lead to the intense self-emission of electrons from the negatively charged free surface areas of the ferroelectric sample. Hence, electron guns can be built with extraction-field-free ferroelectric cathodes, which may be easily separated from the high-field regions of post-accelerating gap structures. The intensity, the energy, the temporal and spatial distribution, and the repetitition rate of the emitted electron beams can be controlled within wide limits via the excitation pulses and external focusing and accelerating electromagnetic fields. The technological advantages an...

Ferroelectricity in undoped hafnium oxide

International Nuclear Information System (INIS)

Polakowski, Patrick; Müller, Johannes

2015-01-01

We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P r of up to 10 μC cm −2 as well as a read/write endurance of 1.6 × 10 5 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems

Ferroelectric negative capacitance domain dynamics

Science.gov (United States)

Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

2018-05-01

Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

International Nuclear Information System (INIS)

Yurchuk, Ekaterina

2015-01-01

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO 2 ) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO 2 -based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

A -Site Ordered Double Perovskite CaMnTi ₂ O ₆ as a Multifunctional Piezoelectric and Ferroelectric–Photovoltaic Material

Energy Technology Data Exchange (ETDEWEB)

Gou, Gaoyang [Frontier Institute; Charles, Nenian [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States; Shi, Jing [MOE Key Laboratory; Rondinelli, James M. [Department; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States

2017-09-11

The double perovskite CaMnTi2O6, is a rare A site ordered perovskite oxide that exhibits a sizable ferroelectric polarization and relatively high Curie temperature. Using first-principles calculations combined with detailed symmetry analyses, we identify the origin of the ferroelectricity in CaMnTi2O6. We further explore the material properties of CaMnTi2O6, including its ferroelectric polarization, dielectric and piezoelectric responses, magnetic order, electronic structure, and optical absorption coefficient. It is found that CaMnTi2O6 exhibits room-temperature-stable ferroelectricity and moderate piezoelectric responses. Moreover, CaMnTi2O6 is predicted to have a semiconducting energy band gap similar to that of BiFeO3, and its band gap can further be tuned-via distortions of the planar Mn-O bond lengths. CaMnTi2O6 exemplifies a new class of single-phase semiconducting ferroelectric perovskites for potential applications in ferroelectric photovoltaic solar cells.

Single crystal magnetic, dielectric and thermal studies of the relaxor ferroelectric Pb(Fe2/3W1/3)O3

International Nuclear Information System (INIS)

Ye, Z.G.; Sato, M.; Kita, E.; Bursill, L.A.; Schmid, H.

1998-01-01

The magnetic, dielectric and thermal properties of the complex perovskite Pb(Fe 2/3 W 1/3 )O 3 [PFW] have been studied on single crystals by means of a SQUID magnetometer, dielectric measurements and thermal analysis. Anomalies in the temperature dependence of the magnetization have revealed magnetic phase transitions at T N1 =350 K and T N2 =20 K. These two steps of antiferromagnetic ordering are attributed to the microstructural feature of the complex perovskite, characterized by ordered and disordered arrangements on the B-site, giving rise to a strong superexchange interaction of - Fe 3 + - O - Fe 3+ - type with a higher ordering temperature, and to a weak superexchange interaction of the B-site ordered elpasolite type - Fe 3+ + - O - W - O - Fe 3+ - with a lower Neel temperature. The low temperature antiferromagnetic phase exhibits a weak ferromagnetism. The dielectric properties of PFW show a relaxor ferroelectric behaviour with a dispersive maximum of permittivity at Tm (170 -190 K). The magnetic phase transition at T N2 =20 K results in anomalies both of the real part of permittivity and the dissipation factor, suggesting a magneto-electric coupling via magneto-structural interactions

Structure-Function Relationships of Ferroelectric Polymers.

Science.gov (United States)

Pavlopoulou, Eleni; Maiz, Jon; Spampinato, Nicoletta; Maglione, Mario; Hadziioannou, Georges

Poly(vinylidene fluoride), PVDF, and its copolymers with trifluoroethylene, P(VDF-co-TrFE) have been long appreciated for their excellent ferroelectric properties. Although they have been mainly studied in the 80s and 90s, understanding their performance is still lacking. Yet the increasing use of P(VDF-co-TrFE) thin films in organic electronic devices during the last ten years revives the need for apprehending the function of these materials. In this work we investigate the structure of P(VDF-co-TrFE) films and correlate it to their ferroelectric properties. Our results show that ferroelectric performance is solely driven by the fraction of polymer that has been crystallized in the ferroelectric phases of PVDF. The relations between remnant polarization, coercive field and dipole switching rate of P(VDF-co-TrFE) with the ferroelectric crystallinity are demonstrated. The French Research Agency (ANR), the Aquitaine Region, Arkema and STMicroelectronics are kindly acknowledged for financial support.

Ferroelectric domain engineering by focused infrared femtosecond pulses

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin; Shvedov, Vladlen; Sheng, Yan, E-mail: yan.sheng@anu.edu.au [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Karpinski, Pawel [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Wroclaw University of Technology, Wybrzeze Wyspianskiego, Wroclaw (Poland); Koynov, Kaloian [Max-Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz (Germany); Wang, Bingxia; Trull, Jose; Cojocaru, Crina [Departament de Fisica i Enginyeria Nuclear, Universitat Politecnica de Catalunya, Rambla Sant Nebridi, 08222 Terrassa, Barcelona (Spain); Krolikowski, Wieslaw [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Texas A& M University at Qatar, Doha (Qatar)

2015-10-05

We demonstrate infrared femtosecond laser-induced inversion of ferroelectric domains. This process can be realised solely by using tightly focused laser pulses without application of any electric field prior to, in conjunction with, or subsequent to the laser irradiation. As most ferroelectric crystals like LiNbO{sub 3}, LiTaO{sub 3}, and KTiOPO{sub 4} are transparent in the infrared, this optical poling method allows one to form ferroelectric domain patterns much deeper inside a ferroelectric crystal than by using ultraviolet light and hence can be used to fabricate practical devices. We also propose in situ diagnostics of the ferroelectric domain inversion process by monitoring the Čerenkov second harmonic signal, which is sensitive to the appearance of ferroelectric domain walls.

Nanoscale organic ferroelectric resistive switches

NARCIS (Netherlands)

Khikhlovskyi, V.; Wang, R.; Breemen, A.J.J.M. van; Gelinck, G.H.; Janssen, R.A.J.; Kemerink, M.

2014-01-01

Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their

Photoelectron spectroscopic and microspectroscopic probes of ferroelectrics

Science.gov (United States)

Tǎnase, Liviu C.; Abramiuc, Laura E.; Teodorescu, Cristian M.

2017-12-01

This contribution is a review of recent aspects connected with photoelectron spectroscopy of free ferroelectric surfaces, metals interfaced with these surfaces, graphene-like layers together with some exemplifications concerning molecular adsorption, dissociations and desorptions occurring from ferroelectrics. Standard photoelectron spectroscopy is used nowadays in correlation with other characterization techniques, such as piezoresponse force microscopy, high resolution transmission electron spectroscopy, and ferroelectric hysteresis cycles. In this work we will concentrate mainly on photoelectron spectroscopy and spectro-microscopy characterization of ferroelectric thin films, starting from atomically clean ferroelectric surfaces of lead zirco-titanate, then going towards heterostructures using this material in combination with graphene-like carbon layers or with metals. Concepts involving charge accumulation and depolarization near surface will be revisited by taking into account the newest findings in this area.

Graphene/semiconductor silicon modified BiFeO3/indium tin oxide ferroelectric photovoltaic device for transparent self-powered windows

International Nuclear Information System (INIS)

Gupta, Surbhi; Medwal, Rohit; Limbu, Tej B.; Katiyar, Rajesh K.; Pavunny, Shojan P.; Morell, G.; Katiyar, R. S.; Tomar, Monika; Gupta, Vinay

2015-01-01

We report photovoltaic response of highly transparent graphene/BiFe 0.95 Si 0.05 O 3 (BFSiO)/ITO/glass derived from bottom-up spin coating technique. The device exhibits short-circuit-current (I SC 0.75 mA) with 1000 fold upsurge and open-circuit-voltage (V OC  ∼ 0.45 V) under standard AM 1.5 illumination through graphene. In combination, I SC of 0.63 mA and V OC of 0.35 V for same illumination through ITO, reveals the prospects of harvesting indoor light. Also, crystallographic structure, red shift in band gap, leakage behavior, and ferroelectric characteristics of BFSiO thin films are reported. Reproducible transient response of I SC and V OC with quick switching (<100 ms) for 20 consecutive cycles and stability (95%) over test period of 16 weeks signifies high endurance and retentivity, promising for building integrated self-powered windows

Ferroelectric capacitor with reduced imprint

Science.gov (United States)

Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

1997-01-01

An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

Flexible graphene–PZT ferroelectric nonvolatile memory

International Nuclear Information System (INIS)

Lee, Wonho; Ahn, Jong-Hyun; Kahya, Orhan; Toh, Chee Tat; Özyilmaz, Barbaros

2013-01-01

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr 0.35 ,Ti 0.65 )O 3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (P r ) of 30 μC cm −2 and a coercive voltage (V c ) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits. (paper)

Flexible graphene-PZT ferroelectric nonvolatile memory.

Science.gov (United States)

Lee, Wonho; Kahya, Orhan; Toh, Chee Tat; Ozyilmaz, Barbaros; Ahn, Jong-Hyun

2013-11-29

We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

Science.gov (United States)

Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

2016-02-19

We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yurchuk, Ekaterina

2015-02-06

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Negative capacitance in a ferroelectric capacitor.

Science.gov (United States)

Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2015-02-01

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

International Nuclear Information System (INIS)

Ostos, C.; Raymond, O.; Siqueiros, J. M.; Suarez-Almodovar, N.; Bueno-Baques, D.; Mestres, L.

2011-01-01

In this study, (011)-highly oriented Sr, Nb co-doped BiFeO 3 (BFO) thin films were successfully grown on SrRuO 3 /Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of ≅5.3 nm and average grain sizes of ≅65-70 nm for samples with different thicknesses. Remanent polarization values (2P r ) of 54 μC cm -2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe 3+ /Fe 2+ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO 3 /Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

The microscopic model of BiFeO3

Science.gov (United States)

Fishman, R. S.

2018-05-01

Many years and great effort have been spent constructing the microscopic model for the room temperature multiferroic BiFeO3. However, earlier models implicitly assumed that the cycloidal wavevector q was confined to one of the three-fold symmetric axes in the hexagonal plane normal to the electric polarization. Because recent measurements indicate that q can be rotated by a magnetic field, it is essential to properly treat the anisotropy that confines q at low fields. We propose that the anisotropy energy -K3S6sin6 θ cos 6 ϕ confines the wavevectors q to the three-fold axis ϕ = 0 and ± 2 π / 3 within the hexagonal plane with θ = π / 2 .

Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

Science.gov (United States)

Yusuf, Mohammed; Du, Xu; Dawber, Matthew

2013-03-01

Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

NARCIS (Netherlands)

Domingo, N.; Farokhipoor, S.; Santiso, J.; Noheda, B.; Catalan, G.

2017-01-01

We measure the magnetotransport properties of individual 71 degrees domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of

Identifying Two-Dimensional Z 2 Antiferromagnetic Topological Insulators

Science.gov (United States)

Bègue, F.; Pujol, P.; Ramazashvili, R.

2018-01-01

We revisit the question of whether a two-dimensional topological insulator may arise in a commensurate Néel antiferromagnet, where staggered magnetization breaks the symmetry with respect to both elementary translation and time reversal, but retains their product as a symmetry. In contrast to the so-called Z 2 topological insulators, an exhaustive characterization of antiferromagnetic topological phases with the help of topological invariants has been missing. We analyze a simple model of an antiferromagnetic topological insulator and chart its phase diagram, using a recently proposed criterion for centrosymmetric systems [13]. We then adapt two methods, originally designed for paramagnetic systems, and make antiferromagnetic topological phases manifest. The proposed methods apply far beyond the particular examples treated in this work, and admit straightforward generalization. We illustrate this by two examples of non-centrosymmetric systems, where no simple criteria have been known to identify topological phases. We also present, for some cases, an explicit construction of edge states in an antiferromagnetic topological insulator.

Improper ferroelectrics as high-efficiency energy conversion materials

International Nuclear Information System (INIS)

Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki

2017-01-01

An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O_3 and BaTiO_3, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca_0_._8_4Sr_0_._1_6)_8[AlO_2]_1_2(MoO_4)_2 (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Understanding Strain-Induced Phase Transformations in BiFeO3 Thin Films.

Science.gov (United States)

Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M; Cooper, Valentino R

2015-08-01

Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO 3 thin films, which comprises a tetragonal-like ( T ') and an intermediate S ' polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T ' phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S ' phase is energetically very close to the T ' phase, but is structurally similar to the bulk rhombohedral ( R ) phase. By fully characterizing the intermediate S ' polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T ' and S ' phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S ' and T ' polymorphs, which have very different octahedral rotation patterns and c / a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO 3 films. Additionally, a blueshift in the band gap when moving from R to S ' to T ' is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

Ferroelectric BaTiO3 and LiNbO3 Nanoparticles Dispersed in Ferroelectric Liquid Crystal Mixtures: Electrooptic and Dielectric (Postprint)

Science.gov (United States)

2016-10-14

strength for non- doped LF4 and LiNbO3/LF4 nanocolloids at temperature 30C. 146 R. K . SHUKLA ET AL. 6 Distribution A. Approved for public release (PA...AFRL-RX-WP-JA-2017-0210 FERROELECTRIC BaTiO3 AND LiNbO3 NANOPARTICLES DISPERSED IN FERROELECTRIC LIQUID CRYSTAL MIXTURES: ELECTROOPTIC...COMMAND UNITED STATES AIR FORCE Ferroelectric BaTiO3 and LiNbO3 nanoparticles dispersed in ferroelectric liquid crystal mixtures: Electrooptic and

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

Energy Technology Data Exchange (ETDEWEB)

Daranciang, Dan

2012-02-15

We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

International Nuclear Information System (INIS)

Daranciang, Dan

2012-01-01

We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

Ferroelectric nanostructure having switchable multi-stable vortex states

Science.gov (United States)

Naumov, Ivan I [Fayetteville, AR; Bellaiche, Laurent M [Fayetteville, AR; Prosandeev, Sergey A [Fayetteville, AR; Ponomareva, Inna V [Fayetteville, AR; Kornev, Igor A [Fayetteville, AR

2009-09-22

A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

Ferroelectric devices, interconnects, and methods of manufacture thereof

KAUST Repository

Alshareef, Husam N.; Unnat, Bhansali; Khan, Mohd Adnan; Saleh, Moussa M.; Odeh, Ihab N.

2013-01-01

A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

Ferroelectric devices, interconnects, and methods of manufacture thereof

KAUST Repository

Alshareef, Husam N.

2013-12-12

A doped electroconductive organic polymer is used for forming the electrode of a ferroelectric device or an interconnect. An exemplary ferroelectric device is a ferrelectric capacitor comprising: a substrate (101); a first electrode (106) disposed on the substrate; a ferroelectric layer (112) disposed on and in contact with the first electrode; and a second electrode (116) disposed on and in contact with the ferroelectric layer, wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer, for example DMSO-doped PEDOT-PSS.

Hybrid dual gate ferroelectric memory for multilevel information storage

KAUST Repository

Khan, Yasser; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

2015-01-01

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field

Antiferromagnetic spintronics

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Martí, Xavier; Wadley, P.; Wunderlich, Joerg

2016-01-01

Roč. 11, č. 3 (2016), 231-241 ISSN 1748-3387 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : antiferromagnets * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 38.986, year: 2016

Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method

Science.gov (United States)

Gupta, Shashaank; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai; Bansal, Vipul; Bhargava, Suresh K.; Peng, Ju Lin; Garg, Ashish

2011-07-01

We report an unusual behavior observed in (BiFeO3)1- x -(PbTiO3) x (BF- xPT) thin films prepared using a multilayer chemical solution deposition method. Films of different compositions were grown by depositing several bilayers of BF and PT precursors of varying BF and PT layer thicknesses followed by heat treatment in air. X-ray diffraction showed that samples of all compositions show mixing of two compounds resulting in a single-phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk compositions, samples show a monoclinic (MA-type) structure suggesting disappearance of the morphotropic phase boundary (MPB) at x=0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of the remanent polarization at the MPB, as shown by the ferroelectric measurements. Magnetic measurements showed an increase in the magnetization of the samples with increasing BF content. Significant magnetization in the samples indicates melting of spin spirals in the BF- xPT films, arising from a random distribution of iron atoms. Absence of Fe2+ ions was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that thin film processing methodology significantly changes the structural evolution, in contrast to predictions from the equilibrium phase diagram, besides modifying the functional characteristics of the BP- xPT system dramatically.

Improper ferroelectrics as high-efficiency energy conversion materials

Energy Technology Data Exchange (ETDEWEB)

Wakamatsu, Toru; Tanabe, Kenji; Terasaki, Ichiro; Taniguchi, Hiroki [Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2017-05-15

An improper ferroelectric is a certain type of ferroelectrics whose primary order parameter is not polarization but another physical quantity such as magnetization. In contrast to a conventional proper ferroelectrics as represented by Pb(Zr,Ti)O{sub 3} and BaTiO{sub 3}, the improper ferroelectrics has been inconceivable for practical applications thus far. Herein, we illustrate the great potential of improper ferroelectrics for efficient conversion of temperature fluctuation to electric energy, as demonstrated with (Ca{sub 0.84}Sr{sub 0.16}){sub 8}[AlO{sub 2}]{sub 12}(MoO{sub 4}){sub 2} (CSAM-16). The present study has experimentally proven that CSAM-16 achieves an excellent electrothermal coupling factor and high electric field sensitivity for pyroelectric energy conversion that approach a practical level for application to self-powered autonomous electronic devices for rapidly spreading wireless sensor networks. The present results provide a novel approach to developing innovative pyroelectric energy harvesting devices using improper ferroelectrics. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Organic non-volatile memories from ferroelectric phase-separated blends

Science.gov (United States)

Asadi, Kamal; de Leeuw, Dago M.; de Boer, Bert; Blom, Paul W. M.

2008-07-01

New non-volatile memories are being investigated to keep up with the organic-electronics road map. Ferroelectric polarization is an attractive physical property as the mechanism for non-volatile switching, because the two polarizations can be used as two binary levels. However, in ferroelectric capacitors the read-out of the polarization charge is destructive. The functionality of the targeted memory should be based on resistive switching. In inorganic ferroelectrics conductivity and ferroelectricity cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. Here we present an integrated solution by blending semiconducting and ferroelectric polymers into phase-separated networks. The polarization field of the ferroelectric modulates the injection barrier at the semiconductor-metal contact. The combination of ferroelectric bistability with (semi)conductivity and rectification allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read out non-destructively. The concept of an electrically tunable injection barrier as presented here is general and can be applied to other electronic devices such as light-emitting diodes with an integrated on/off switch.

Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

NARCIS (Netherlands)

Cai, R.; Kassa, H.G.; Haouari, R.; Marrani, A.; Geerts, Y.H.; Ruzié, C.; Breemen, A.J.J.M. van; Gelinck, G.H.; Nysten, B.; Hu, Z.; Jonas, A.M.

2016-01-01

Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and

The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

Energy Technology Data Exchange (ETDEWEB)

Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R.; Chen, Long-Qing (Penn); (Xian Jiaotong); (CIW); (Simon); (TRS Techn); (Wollongong)

2016-12-19

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals.

Science.gov (United States)

Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R; Chen, Long-Qing

2016-12-19

The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50-80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

Controlling the properties of ferroelectric-nickelate interfaces

Science.gov (United States)

Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit; Han, Myung-Geun; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick; Ahn, Charles

2015-03-01

Ferroelectrics are a class of materials that exhibit a stable, reversible polarization making them useful for non-volatile electronic devices. In devices consisting of thin film ferroelectric PZT acting as a gate and a thin film of the conductive oxide LaNiO3 grown on LaAlO3(001) acting as a channel, we have realized a large change in room temperature channel resistance by switching the ferroelectric polarization. The effect of switching the polarization of the ferroelectric is to modify the electronic structure of the interface between the gate and channel, resulting in conduction in the otherwise insulating ferroelectric. Here, we discuss how changing the epitaxial strain and interface termination of LaNiO3 can result in larger changes in resistivity. The epitaxial strain is varied by growing the devices on LaAlO3 for tensile strain and SrTiO3 for compressive strain. An interface termination of either an atomic layer of NiO2 or LaO is achieved via atomic layering using oxygen plasma assisted molecular beam epitaxy (MBE).

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien

2017-01-01

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque

Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

Science.gov (United States)

Herchig, Ryan Christopher

Perovskite ferroelectrics and antiferroelectrics have attracted a lot of attention owing to their potential for device applications including THz sensors, solid state cooling, ultra high density computer memory, and electromechanical actuators to name a few. The discovery of ferroelectricity at the nanoscale provides not only new and exciting possibilities for device miniaturization, but also a way to study the fundamental physics of nanoscale phenomena in these materials. Ferroelectric nanowires show a rich variety of physical characteristics which are advantageous to the design of nanoscale ferroelectric devices such as exotic dipole patterns, a strong dependence of the polarization and phonon frequencies on the electrical and mechanical boundary conditions, as well as a dependence of the transition temperatures on the diameter of the nanowire. Antiferroelectricity also exists at the nanoscale and, due to the proximity in energy of the ferroelectric and antiferroelectric phases, a phase transition from the ferroelectric to the antiferroelectric phase can be facilitated through the application of the appropriate mechanical and electrical boundary conditions. While much progress has been made over the past several decades to understand the nature of ferroelectricity/antiferroelectricity in nanowires, many questions remain unanswered. In particular, little is known about how the truncated dimensions affect the soft mode frequency dynamics or how various electrical and mechanical boundary conditions might change the nature of the phase transitions in these ferroelectric nanowires. Could nanowires offer a distinct advantage for solid state cooling applications? Few studies have been done to elucidate the fundamental physics of antiferroelectric nanowires. How the polarization in ferroelectric nanowires responds to a THz electric field remains relatively underexplored as well. In this work, the aim is to to develop and use computational tools that allow first

Voltage Control of Antiferromagnetic Phases at Near-Terahertz Frequencies

Science.gov (United States)

Barra, Anthony; Domann, John; Kim, Ki Wook; Carman, Greg

2018-03-01

A method to control antiferromagnetism using voltage-induced strain is proposed and theoretically examined. Voltage-induced magnetoelastic anisotropy is shown to provide sufficient torque to switch an antiferromagnetic domain 90° either from out of plane to in plane or between in-plane axes. Numerical results indicate that strain-mediated antiferromagnetic switching can occur in an 80-nm nanopatterned disk at frequencies approaching 1 THz but that the switching speed heavily depends on the system's mechanical design. Furthermore, the energy cost to induce magnetic switching is only 450 aJ, indicating that magnetoelastic control of antiferromagnetism is substantially more energy efficient than other approaches.

Magnetoelectric effect in (BiFeO3x–(BaTiO31-x solid solutions

Directory of Open Access Journals (Sweden)

Kowal Karol

2015-03-01

Full Text Available The aim of the present work was to study magnetoelectric effect (ME in (BiFeO3x-(BaTiO31-x solid solutions in terms of technological conditions applied in the samples fabrication process. The rapidly growing interest in these materials is caused by their multiferroic behaviour, i.e. coexistence of both electric and magnetic ordering. It creates possibility for many innovative applications, e.g. in steering the magnetic memory by electric field and vice versa. The investigated samples of various chemical compositions (i.e. x = 0.7, 0.8 and 0.9 were prepared by the solid-state sintering method under three sets of technological conditions differing in the applied temperature and soaking time. Measurements of the magnetoelectric voltage coefficient αME were performed using a dynamic lock-in technique. The highest value of αME was observed for 0.7BiFeO3-0.3BaTiO3 solid solution sintered at the highest temperature (T = 1153 K after initial electrical poling despite that the soaking time was reduced 10 times in this case.

Chemical segregation and self polarisation in ferroelectrics

Directory of Open Access Journals (Sweden)

Bernard E. Watts

2009-06-01

Full Text Available Chemical partitioning or segregation is commonly encountered in solid-state syntheses. It is driven by compositional, thermal and electric field gradients. These phenomena can be quite extreme in thin films and lead to notable effects on the electrical properties of ferroelectrics. The segregation in ferroelectric thin films will be illustrated and the mechanisms explained in terms of diffusion processes driven by a potential gradient of the oxygen. The hypothesis can also explain self polarisation and imprint in ferroelectric hysteresis.

Stress effects in ferroelectric perovskite thin-films

Science.gov (United States)

Zednik, Ricardo Johann

The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

Enhanced magnetization in morphologically and magnetically distinct BiFeO3 and La0.7Sr0.3MnO3 composites

Science.gov (United States)

Pillai, Shreeja; Reshi, Hilal Ahmad; Bagwaiya, Toshi; Banerjee, Alok; Shelke, Vilas

2017-09-01

Nanomaterials exhibit properties different from those of their bulk counterparts. The modified magnetic characteristics of manganite nanoparticles were exploited to improve magnetization in multiferroic BiFeO3 compound. We studied the composite of two morphologically and magnetically distinct compounds BiFeO3 (BFO) and La0.7Sr0.3MnO3 (LSMO). The microcrystalline BiFeO3 sample was prepared by solid state reaction method and the nanocrystalline La0.7Sr0.3MnO3 by sol-gel method. Composites with nominal compositions (1-x)BiFeO3-(x)La0.7Sr0.3MnO3 were prepared by modified solid state reaction method. The phase purity and crystal structures were checked by using X-ray diffraction. The formation of composites with phase separated BFO and LSMO was confirmed using Raman and Fourier Transform Infrared spectroscopy studies. The composite samples showed relatively high value of magnetization with finite coercivity. This improvement in magnetic behavior is ascribed to the coexistence of multiple magnetic orderings in composite samples. We scrutinized the possibility of oxygen vacancy or Fe mixed valency formation in the samples using X-ray photoelectron spectroscopy technique.

Structural and electrical characterization of BiFeO3-NaTaO3 multiferroic

International Nuclear Information System (INIS)

Mohanty, Suchismita; Choudhary, R.N.P.; Parida, B.N.; Padhee, R.

2014-01-01

Using a standard high-temperature solid-state reaction technique, polycrystalline samples of (Bi 1-x , Na x ) (Fe 1-x , Ta x ) O 3 (x = 0.0, 0.5) were prepared. The formation of the desired materials was confirmed by X-ray diffraction. The surface texture of the prepared materials recorded by scanning electron microscope exhibits a uniform grain distribution with small voids suggesting the formation of high-density pellet samples. The impedance and dielectric properties of the materials were investigated as a function of temperature and frequency. The relative dielectric constant and loss tangent of BiFeO 3 decrease on addition of NaTaO 3 (x = 0.5). The effect of addition of NaTaO 3 on grain and grain boundary contributions in the resistive and capacitive components of BiFeO 3 was studied using complex impedance spectroscopy. The value of activation energy due to both grain and grain boundary of both the samples is nearly same. The nature of variation of dc conductivity confirms the Arrhenius behavior of the materials. Study of frequency dependence of ac conductivity suggests that the materials obey Jonscher's universal power law and the presence of ionic conductivity. (orig.)

Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

Science.gov (United States)

Galceran, R; Fina, I; Cisneros-Fernández, J; Bozzo, B; Frontera, C; López-Mir, L; Deniz, H; Park, K-W; Park, B-G; Balcells, Ll; Martí, X; Jungwirth, T; Martínez, B

2016-10-20

Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.

Superconductivity, Antiferromagnetism, and Kinetic Correlation in Strongly Correlated Electron Systems

Directory of Open Access Journals (Sweden)

Takashi Yanagisawa

2015-01-01

Full Text Available We investigate the ground state of two-dimensional Hubbard model on the basis of the variational Monte Carlo method. We use wave functions that include kinetic correlation and doublon-holon correlation beyond the Gutzwiller ansatz. It is still not clear whether the Hubbard model accounts for high-temperature superconductivity. The antiferromagnetic correlation plays a key role in the study of pairing mechanism because the superconductive phase exists usually close to the antiferromagnetic phase. We investigate the stability of the antiferromagnetic state when holes are doped as a function of the Coulomb repulsion U. We show that the antiferromagnetic correlation is suppressed as U is increased exceeding the bandwidth. High-temperature superconductivity is possible in this region with enhanced antiferromagnetic spin fluctuation and pairing interaction.

Impact induced depolarization of ferroelectric materials

Science.gov (United States)

Agrawal, Vinamra; Bhattacharya, Kaushik

2018-06-01

We study the large deformation dynamic behavior and the associated nonlinear electro-thermo-mechanical coupling exhibited by ferroelectric materials in adiabatic environments. This is motivated by a ferroelectric generator which involves pulsed power generation by loading the ferroelectric material with a shock, either by impact or a blast. Upon impact, a shock wave travels through the material inducing a ferroelectric to nonpolar phase transition giving rise to a large voltage difference in an open circuit situation or a large current in a closed circuit situation. In the first part of this paper, we provide a general continuum mechanical treatment of the situation assuming a sharp phase boundary that is possibly charged. We derive the governing laws, as well as the driving force acting on the phase boundary. In the second part, we use the derived equations and a particular constitutive relation that describes the ferroelectric to nonpolar phase transition to study a uniaxial plate impact problem. We develop a numerical method where the phase boundary is tracked but other discontinuities are captured using a finite volume method. We compare our results with experimental observations to find good agreement. Specifically, our model reproduces the observed exponential rise of charge as well as the resistance dependent Hugoniot. We conclude with a parameter study that provides detailed insight into various aspects of the problem.

Magnon Spin Nernst Effect in Antiferromagnets

Science.gov (United States)

Zyuzin, Vladimir A.; Kovalev, Alexey A.

2016-11-01

We predict that a temperature gradient can induce a magnon-mediated spin Hall response in an antiferromagnet with nontrivial magnon Berry curvature. We develop a linear response theory which gives a general condition for a Hall current to be well defined, even when the thermal Hall response is forbidden by symmetry. We apply our theory to a honeycomb lattice antiferromagnet and discuss a role of magnon edge states in a finite geometry.

Magnon Spin Nernst Effect in Antiferromagnets.

Science.gov (United States)

Zyuzin, Vladimir A; Kovalev, Alexey A

2016-11-18

We predict that a temperature gradient can induce a magnon-mediated spin Hall response in an antiferromagnet with nontrivial magnon Berry curvature. We develop a linear response theory which gives a general condition for a Hall current to be well defined, even when the thermal Hall response is forbidden by symmetry. We apply our theory to a honeycomb lattice antiferromagnet and discuss a role of magnon edge states in a finite geometry.

Patterned piezo-, pyro-, and ferroelectricity of poled polymer electrets

International Nuclear Information System (INIS)

Qiu, Xunlin

2010-01-01

Polymers with strong piezo-, pyro-, and ferroelectricity are attractive for a wide range of applications. In particular, semicrystalline ferroelectric polymers are suitable for a large variety of piezo- and pyroelectric transducers or sensors, while amorphous polymers containing chromophore molecules are particularly interesting for photonic devices. Recently, a new class of polymer materials has been added to this family: internally charged cellular space-charge polymer electrets (so-called “ferroelectrets”), whose piezoelectricity can be orders of magnitude higher than that of conventional ferroelectric polymers. Suitable patterning of these materials leads to improved or unusual macroscopic piezo-, pyro-, and ferroelectric or nonlinear optical properties that may be particularly useful for advanced transducer or waveguide applications. In the present paper, the piezo-, pyro-, and ferroelectricity of poled polymers is briefly introduced, an overview on the preparation of polymer electrets with patterned piezo-, pyro-, and ferroelectricity is provided and a survey of selected applications is presented.

Geometric shape control of thin film ferroelectrics and resulting structures

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

2000-01-01

A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

Ferroelectrics: A pathway to switchable surface chemistry and catalysis

Science.gov (United States)

Kakekhani, Arvin; Ismail-Beigi, Sohrab; Altman, Eric I.

2016-08-01

It has been known for more than six decades that ferroelectricity can affect a material's surface physics and chemistry thereby potentially enhancing its catalytic properties. Ferroelectrics are a class of materials with a switchable electrical polarization that can affect surface stoichiometry and electronic structure and thus adsorption energies and modes; e.g., molecular versus dissociative. Therefore, ferroelectrics may be utilized to achieve switchable surface chemistry whereby surface properties are not fixed but can be dynamically controlled by, for example, applying an external electric field or modulating the temperature. Several important examples of applications of ferroelectric and polar materials in photocatalysis and heterogeneous catalysis are discussed. In photocatalysis, the polarization direction can control band bending at water/ferroelectric and ferroelectric/semiconductor interfaces, thereby facilitating charge separation and transfer to the electrolyte and enhancing photocatalytic activity. For gas-surface interactions, available results suggest that using ferroelectrics to support catalytically active transition metals and oxides is another way to enhance catalytic activity. Finally, the possibility of incorporating ferroelectric switching into the catalytic cycle itself is described. In this scenario, a dynamic collaboration of two polarization states can be used to drive reactions that have been historically challenging to achieve on surfaces with fixed chemical properties (e.g., direct NOx decomposition and the selective partial oxidation of methane). These predictions show that dynamic modulation of the polarization can help overcome some of the fundamental limitations on catalytic activity imposed by the Sabatier principle.

Static Characteristics of the Ferroelectric Transistor Inverter

Science.gov (United States)

Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

2010-01-01

The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

Electrostatic micromotor based on ferroelectric ceramics

Science.gov (United States)

Baginsky, I. L.; Kostsov, E. G.

2004-11-01

A new electrostatic micromotor is described that utilizes the electromechanical energy conversion principle earlier described by the authors. The electromechanical energy conversion is based on reversible electrostatic rolling of thin metallic films (petals) on a ferroelectric surface. The motor's active media are layers of ferroelectric ceramics (about 100 µm in thickness). The characteristics of the electrostatic rolling of the petals on different ceramic surfaces are studied, as well as the dynamic characteristics of the micromotors. It is shown that the use of antiferroelectric material allows one to reach a specific energy capacitance comparable to that of the micromotors based on ferroelectric films and to achieve a specific power of 30-300 µW mm-2.

Field-effect transistor memories based on ferroelectric polymers

Science.gov (United States)

Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

2017-11-01

Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

Magnetic and dielectric properties of alkaline earth Ca2+ and Ba2+ ions co-doped BiFeO3 nanoparticles

International Nuclear Information System (INIS)

Yang, C.; Liu, C.Z.; Wang, C.M.; Zhang, W.G.; Jiang, J.S.

2012-01-01

Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles, Bi 0.8 Ca 0.2−x Ba x FeO 3 (x=0–0.20), were prepared by a sol–gel method. The phase structure, grain size, dielectric and magnetic properties of the prepared samples were investigated. The results showed that the lattice structure of the nanoparticles transformed from rhombohedral (x=0) to orthorhombic (x=0.07–0.19) and then to tetragonal (x=0.20) with x increased. The dielectric properties of the nanoparticles were affected by the properties of the substitutional ions as well as the crystalline structure of the samples. The magnetic properties of the nanoparticles were greatly improved and the T N of the nanoparticles was obviously increased. All the Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles presented the high ratio of M r /M from 0.527 to 0.571 and large coercivity from 4.335 to 5.163 KOe. - Highlights: ► Ca 2+ and Ba 2+ ions co-doped BiFeO 3 nanoparticles were prepared using a sol–gel method. ► The magnetic properties of the nanoparticles are greatly improved. ► The Neel temperature (T N ) of the nanoparticles is greatly increased. ► Doped ions and crystal structure affect the dielectric properties of the nanoparticles.

Antiferromagnetic domains in rare earth metals and alloys

Energy Technology Data Exchange (ETDEWEB)

Palmer, S B [Hull Univ. (UK). Dept. of Applied Physics

1975-12-01

Anomalies in the c-axis elastic properties of antiferromagnetic Dy, 50% Tb-Ho and 60% Gd-Y are reported. The anomalies are only present when the sample is cycled from the ferromagnetic to the antiferromagnetic state and are attributed to domains in the helical regime.

Shape-induced anisotropy in antiferromagnetic nanoparticles

International Nuclear Information System (INIS)

Gomonay, O.; Kondovych, S.; Loktev, V.

2014-01-01

High fraction of the surface atoms considerably enhances the influence of size and shape on the magnetic and electronic properties of nanoparticles. Shape effects in ferromagnetic nanoparticles are well understood and allow us to set and control the parameters of a sample that affect its magnetic anisotropy during production. In the present paper we study the shape effects in the other widely used magnetic materials – antiferromagnets, – which possess vanishingly small or zero macroscopic magnetization. We take into account the difference between the surface and bulk magnetic anisotropy of a nanoparticle and show that the effective magnetic anisotropy depends on the particle shape and crystallographic orientation of its faces. The corresponding shape-induced contribution to the magnetic anisotropy energy is proportional to the particle volume, depends on magnetostriction, and can cause formation of equilibrium domain structure. Crystallographic orientation of the nanoparticle surface determines the type of domain structure. The proposed model allows us to predict the magnetic properties of antiferromagnetic nanoparticles depending on their shape and treatment. - Highlights: • We demonstrate that the shape effects in antiferromagnetic nanoparticles stem from the difference of surface and bulk magnetic properties combined with strong magnetoelastic coupling. • We predict shape-induced anisotropy in antiferromagnetic particles with large aspect ratio. • We predict different types of domain structures depending on the orientation of the particle faces

Quantum mechanical studies of complex ferroelectric perovskites

Science.gov (United States)

Ramer, Nicholas John

In many electronic device applications, there is a need to interconvert electrical energy and other types of energy. Ferroelectric materials, which possess a voltage-dependent polarization, can enable this energy conversion process. Because of the broad interest in ferroelectric materials for these devices, there is a critical research effort, both experimental and theoretical, to understand these materials and aid in the development of materials with improved properties. This thesis presents detailed quantum mechanical investigations of the behavior of a complex ferroelectric perovskite under applied stress. In particular, we have chosen to study the solid solution PbZr1-xTix O3 (PZT). Since the study of ferroelectricity involves understanding both its structural and electronic signatures in materials, it has necessitated the development of a novel theoretical technique which improves the accuracy of the pseudopotentials used in our density functional theory calculations as well as a new method for constructing three-dimensional atomistic responses to small amounts of external stress. To examine the material's behavior under larger amounts of stress, we have studied the behavior of a composition of PZT lying near a structural phase boundary. On either side of the phase boundary, the material is characterized by a different polarization direction and may easily be switched between phases by applying external stress. In addition to stress-induced phase transitions, most ferroelectric materials also have composition dependent phase boundaries. Since different compositions of PZT would require increased computational effort, we have formulated an improved virtual crystal approach that makes tractable the study of the entire composition range. Using this method, we have been able to show for the first time via first-principles calculations, a composition dependent phase transition in a ferroelectric material. This thesis has accomplished three important goals: new

Ferroelectric relaxor Ba(TiCe)O3

International Nuclear Information System (INIS)

Chen Ang; Zhi Jing; Yu Zhi

2002-01-01

The dielectric behaviour of Ba(Ti 1-y Ce y )O 3 solid solutions (y=0-0.3) has been studied. A small amount of Ce doping (y=0.02) has weak influence on the dielectric behaviour of Ba(Ti 1-y Ce y )O 3 . With increasing Ce concentration, three phase transitions of pure BaTiO 3 are pinched into one rounded dielectric peak with frequency dispersion, and the relaxation time follows the Vogel-Fulcher relation. The evolution from a normal ferroelectric to a ferroelectric relaxor is emphasized. High strains (S=∼0.1-0.19%) with a small hysteresis under ac fields are obtained in ferroelectric relaxors Ba(Ti 1-y Ce y )O 3 . The physical mechanism of the relaxation process, the pinching effect of the phase transitions and their influence on the ferroelectric and electrostrictive behaviour are discussed. (author)

Long-range interactions in antiferromagnetic quantum spin chains

Science.gov (United States)

Bravo, B.; Cabra, D. C.; Gómez Albarracín, F. A.; Rossini, G. L.

2017-08-01

We study the role of long-range dipolar interactions on antiferromagnetic spin chains, from the classical S →∞ limit to the deep quantum case S =1 /2 , including a transverse magnetic field. To this end, we combine different techniques such as classical energy minima, classical Monte Carlo, linear spin waves, bosonization, and density matrix renormalization group (DMRG). We find a phase transition from the already reported dipolar ferromagnetic region to an antiferromagnetic region for high enough antiferromagnetic exchange. Thermal and quantum fluctuations destabilize the classical order before reaching magnetic saturation in both phases, and also close to zero field in the antiferromagnetic phase. In the extreme quantum limit S =1 /2 , extensive DMRG computations show that the main phases remain present with transition lines to saturation significatively shifted to lower fields, in agreement with the bosonization analysis. The overall picture maintains a close analogy with the phase diagram of the anisotropic XXZ spin chain in a transverse field.

Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

Science.gov (United States)

Hoffman, Jason D.; Wu, Stephen M.; Kirby, Brian J.; Bhattacharya, Anand

2018-04-01

Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show that by relaxing the strict criterion on pure antiferromagnetism, we can engineer an alternative class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a noncollinear magnetic phase in LaNiO3 /La2 /3Sr1 /3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying the superlattice spacing, strain, applied magnetic field, or temperature. By using this alternative "knob" to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagneticlike controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable properties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the noncollinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.

Superconductivity in doped antiferromagnets

International Nuclear Information System (INIS)

Lagos, M.

1990-09-01

The antiferromagnetic S = 1/2 Heisenberg model is extended to account for the presence of holes. The holes move along a sublattice whose sites are located in between the spin sites. The spin-hole coupling arises from the modification of the exchange interaction between two neighbouring spins when the site between them is occupied by a hole. this physical picture leads to a generalized version of the so called t-J model Hamiltonian. The use of a recently developed method that introduces spin-O excitations for dealing with the Heisenberg antiferromagnetic model allows us to map the model Hamiltonian onto a Froelich one, with the spin-O magnetic excitations substituting phonons. The case of electrons moving along the spin sites is discussed as well. (author). 16 refs, 2 figs

Fast Ferroelectric L-Band Tuner for ILC Cavities

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay L

2010-03-15

Design, analysis, and low-power tests are described on a 1.3 GHz ferroelectric tuner that could find application in the International Linear Collider or in Project X at Fermi National Accelerator Laboratory. The tuner configuration utilizes a three-deck sandwich imbedded in a WR-650 waveguide, in which ferroelectric bars are clamped between conducting plates that allow the tuning bias voltage to be applied. Use of a reduced one-third structure allowed tests of critical parameters of the configuration, including phase shift, loss, and switching speed. Issues that were revealed that require improvement include reducing loss tangent in the ferroelectric material, development of a reliable means of brazing ferroelectric elements to copper parts of the tuner, and simplification of the mechanical design of the configuration.

Direct evidence of strong local ferroelectric ordering in a thermoelectric semiconductor

Energy Technology Data Exchange (ETDEWEB)

Aggarwal, Leena; Sekhon, Jagmeet S.; Arora, Ashima; Sheet, Goutam, E-mail: goutam@iisermohali.ac.in [Department of Physical Sciences, Indian Institute of Science Education and Research Mohali (IISER M), Sector 81, S. A. S. Nagar, Manauli PO-140306 (India); Guin, Satya N.; Negi, Devendra S.; Datta, Ranjan; Biswas, Kanishka, E-mail: kanishka@jncasr.ac.in [New Chemistry Unit and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore 560064 (India)

2014-09-15

It is thought that the proposed new family of multi-functional materials, namely, the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in solids. Therefore, the ferroelectric thermoelectrics are expected to be of immense technological and fundamental significance. As a first step towards this direction, it is most important to identify the existing high performance thermoelectric materials exhibiting ferroelectricity. Herein, through the direct measurement of local polarization switching, we show that the recently discovered thermoelectric semiconductor AgSbSe{sub 2} has local ferroelectric ordering. Using piezo-response force microscopy, we demonstrate the existence of nanometer scale ferroelectric domains that can be switched by external electric field. These observations are intriguing as AgSbSe{sub 2} crystalizes in cubic rock-salt structure with centro-symmetric space group (Fm–3m), and therefore, no ferroelectricity is expected. However, from high resolution transmission electron microscopy measurement, we found the evidence of local superstructure formation which, we believe, leads to local distortion of the centro-symmetric arrangement in AgSbSe{sub 2} and gives rise to the observed ferroelectricity. Stereochemically active 5S{sup 2} lone-pair of Sb may also give rise to local structural distortion thereby creating ferroelectricity in AgSbSe{sub 2}.

Ferroelectric domain continuity over grain boundaries

DEFF Research Database (Denmark)

Mantri, Sukriti; Oddershede, Jette; Damjanovic, Dragan

2017-01-01

Formation and mobility of domain walls in ferroelectric materials is responsible for many of their electrical and mechanical properties. Domain wall continuity across grain boundaries has been observed since the 1950's and is speculated to affect the grain boundary-domain interactions, thereby...... impacting macroscopic ferroelectric properties in polycrystalline systems. However detailed studies of such correlated domain structures across grain boundaries are limited. In this work, we have developed the mathematical requirements for domain wall plane matching at grain boundaries of any given...... orientation. We have also incorporated the effect of grain boundary ferroelectric polarization charge created when any two domains meet at the grain boundary plane. The probability of domain wall continuity for three specific grain misorientations is studied. Use of this knowledge to optimize processing...

Ferroelectric-gate field effect transistor memories device physics and applications

CERN Document Server

Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

2016-01-01

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

Anti-ferromagnetic Heisenberg model on bilayer honeycomb

International Nuclear Information System (INIS)

Shoja, M.; Shahbazi, F.

2012-01-01

Recent experiment on spin-3/2 bilayer honeycomb lattice antiferromagnet Bi 3 Mn 4 O 12 (NO 3 ) shows a spin liquid behavior down to very low temperatures. This behavior can be ascribed to the frustration effect due to competitions between first and second nearest neighbour's antiferromagnet interaction. Motivated by the experiment, we study J 1 -J 2 Antiferromagnet Heisenberg model, using Mean field Theory. This calculation shows highly degenerate ground state. We also calculate the effect of second nearest neighbor through z direction and show these neighbors also increase frustration in these systems. Because of these degenerate ground state in these systems, spins can't find any ground state to be freeze in low temperatures. This behavior shows a novel spin liquid state down to very low temperatures.

A hybrid ferroelectric-flash memory cells

Science.gov (United States)

Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

2014-09-01

A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

Second harmonic generation in generalized Thue-Morse ferroelectric superlattices

International Nuclear Information System (INIS)

Wang Longxiang; Yang Xiangbo; Chen Tongsheng

2009-01-01

In this paper the second harmonic generation (SHG) in generalized Thue-Morse (GTM(m, n)) ferroelectric superlattices is studied. Under the small-signal approximation, the SHG spectra in both real and reciprocal spaces are investigated. It is found that: (1) only when the structure parameters l, l A , and l B are all chosen to be proper, can SHG in GTM(m, n) ferroelectric superlattices be generated; (2) for Family A of generalized Thue-Morse, GTM(m, 1) ferroelectric systems, with the increase of parameter m, the intense peaks of SHG concentrate on the long wavelength 1.4-1.5μm (the fundamental beam (FB) wavelength is within 0.8-1.5μm), but for Family B of generalized Thue-Morse, GTM(1, n) ferroelectric superlattices, with the increase of parameter n, the intense peaks of SHG concentrate on the middle wavelength 1.1-1.2μm; and (3) for GTM(m, 1) ferroelectric superlattices, the bigger the m, the stronger the relative integral intensity (RII) of SHG would be, but for GTM(1, n) ferroelectric systems, the bigger the n, the weaker the RII of SHG would be.

An Automated Ab Initio Framework for Identifying New Ferroelectrics

Science.gov (United States)

Smidt, Tess; Reyes-Lillo, Sebastian E.; Jain, Anubhav; Neaton, Jeffrey B.

Ferroelectric materials have a wide-range of technological applications including non-volatile RAM and optoelectronics. In this work, we present an automated first-principles search for ferroelectrics. We integrate density functional theory, crystal structure databases, symmetry tools, workflow software, and a custom analysis toolkit to build a library of known and proposed ferroelectrics. We screen thousands of candidates using symmetry relations between nonpolar and polar structure pairs. We use two search strategies 1) polar-nonpolar pairs with the same composition and 2) polar-nonpolar structure type pairs. Results are automatically parsed, stored in a database, and accessible via a web interface showing distortion animations and plots of polarization and total energy as a function of distortion. We benchmark our results against experimental data, present new ferroelectric candidates found through our search, and discuss future work on expanding this search methodology to other material classes such as anti-ferroelectrics and multiferroics.

Effects of (La, Sr) co-doping on electrical conduction and magnetic properties of BiFeO3 nanoparticles

International Nuclear Information System (INIS)

Liu Li; Wang Shouyu; Yin Zi; Zhang Chuang; Li Xiu; Yang Jiabin; Liu Weifang; Xu Xunling

2016-01-01

Multiferroic material as a photovoltaic material has gained considerable attention in recent years. Nanoparticles (NPs) La 0.1 Bi 0.9−x Sr x FeO y (LBSF, x = 0, 0.2, 0.4) with dopant Sr 2+ ions were synthesized by the sol–gel method. A systematic change in the crystal structure from rhombohedral to tetragonal upon increasing Sr doping was observed. There is an obvious change in the particle size from 180 nm to 50 nm with increasing Sr substitution into LBFO. It was found that Sr doping effectively narrows the band gap from ∼ 2.08 eV to ∼ 1.94 eV, while it leads to an apparent enhancement in the electrical conductivity of LBSF NPs, making a transition from insulator to semiconductor. This suggests an effective way to modulate the conductivity of BiFeO 3 -based multiferroic materials with pure phase by co-doping with La and Sr at the A sites of BiFeO 3 . (paper)

Theoretical modeling of diluted antiferromagnetic systems

International Nuclear Information System (INIS)

Pozo, J; Elgueta, R; Acevedo, R

2000-01-01

Some magnetic properties of a Diluted Antiferromagnetic System (DAFS) are studied. The model of the two sub-networks for antiferromagnetism is used and a Heisenberg Hamiltonian type is proposed, where the square operators are expressed in terms of boson operators with the approach of spin waves. The behavior of the diluted system's fundamental state depends basically on the competition effect between the anisotropy field and the Weiss molecular field. The approach used allows the diluted system to be worked for strong anisotropies as well as when these are very weak

Probing nanoscale ferroelectricity by ultraviolet Raman spectroscopy.

Science.gov (United States)

Tenne, D A; Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Katiyar, R S; Cantarero, A; Soukiassian, A; Vaithyanathan, V; Haeni, J H; Tian, W; Schlom, D G; Choi, K J; Kim, D M; Eom, C B; Sun, H P; Pan, X Q; Li, Y L; Chen, L Q; Jia, Q X; Nakhmanson, S M; Rabe, K M; Xi, X X

2006-09-15

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

Flexoelectricity: strain gradient effects in ferroelectrics

Energy Technology Data Exchange (ETDEWEB)

Ma Wenhui [Department of Physics, Shantou Unversity, Shantou, Guangdong 515063 (China)

2007-12-15

Mechanical strain gradient induced polarization effect or flexoelectricity in perovskite-type ferroelectric and relaxor ferroelectric ceramics was investigated. The flexoelectric coefficients measured at room temperature ranged from about 1 {mu} C m{sup -1} for lead zirconate titanate to 100 {mu} C m{sup -1} for barium strontium titanate. Flexoelectric effects were discovered to be sensitive to chemical makeup, phase symmetry, and domain structures. Based on phenomenological discussion and experimental data on flexoelectricity, the present study proposed that mechanical strain gradient field could influence polarization responses in a way analogous to electric field. Flexoelectric coefficients were found to be nonlinearly enhanced by dielectric permittivity and strain gradient. Interfacial mismatch in epitaxial thin films can give rise to high strain gradients, enabling flexoelectric effects to make a significant impact in properly engineered ferroelectric heterostructure systems.

Specific features of nonlinear optical properties of Eu{sup 3+} doped BiFeO{sub 3} nanopowders near antiferromagnetic transition

Energy Technology Data Exchange (ETDEWEB)

El Bahraoui, T.; Sekkati, M. [University of Mohammed V, Materials Physics Laboratory, P.B. 1014 Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIO, Ecole Normale Supérieure, Rabat (Morocco); Abd-Lefdil, M. [University of Mohammed V, Materials Physics Laboratory, P.B. 1014 Rabat (Morocco); El-Naggar, A.M. [Research chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Department, College of Science, King Saud University, P.O.Box 2455, Riyadh 11451 (Saudi Arabia); Physics Department, Faculty of Science, Ain Shams University, Abassia, Cairo 11566 (Egypt); AlZayed, N.S. [Physics & Astronomy Department, College of Science, King Saud University, P.O.Box 2455, Riyadh 11451, Saudi Arabi (Saudi Arabia); Albassam, A.A. [Research chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Department, College of Science, King Saud University, P.O.Box 2455, Riyadh 11451 (Saudi Arabia); Kityk, I.V., E-mail: iwank74@gmail.com [Faculty of Electrical Engineering, Czestochowa University Technology, Armii Krajowej 17, PL-42201 Czestochowa (Poland); Maciag, A. [Faculty of Electrical Engineering, Czestochowa University Technology, Armii Krajowej 17, PL-42201 Czestochowa (Poland)

2016-01-15

The monitoring of the Eu{sup 3+} doped BiFeO{sub 3} nanopowders was performed near the antiferromagnetic transformation by photoinduced optical second harmonic generation. As photoinduced laser beams we have used bicolor coherent excitations of the Er:glass laser emitting at 1540 nm with frequency repetition about 15 ns. The studies of the photoinduced SHG were performed versus temperature including the temperature range of ferromagnetic–ferroelectric transition (350 °C…390 °C). The optimal light polarization and intensity ratio were chosen; the sensitivity of the photoinduced SHG to the multiferroic phase transitions was explored. - Highlights: • The photoinduced optical second harmonic generation for the Eu{sup 3+} doped BiFeO{sub 3} nanopowders which use two bicolor coherent laser beams incident under different angles gives some enhancement of the SHG. • The photoinduced SHG may be used as sensitive tools for detection of multiferroelectricity. • The nonlinear optical scattering processes play here principal role.

Experimental and theoretical studies of nanoparticles of antiferromagnetic materials

DEFF Research Database (Denmark)

Mørup, Steen; Madsen, Daniel Esmarch; Frandsen, Cathrine

2007-01-01

The magnetic properties of nanoparticles of antiferromagnetic materials are reviewed. The magnetic structure is often similar to the bulk structure, but there are several examples of size-dependent magnetic structures. Owing to the small magnetic moments of antiferromagnetic nanoparticles, the co...

Organic non-volatile memories from ferroelectric phase separated blends

Science.gov (United States)

Asadi, Kamal; de Leeuw, Dago; de Boer, Bert; Blom, Paul

2009-03-01

Ferroelectric polarisation is an attractive physical property for non-volatile binary switching. The functionality of the targeted memory should be based on resistive switching. Conductivity and ferroelectricity however cannot be tuned independently. The challenge is to develop a storage medium in which the favourable properties of ferroelectrics such as bistability and non-volatility can be combined with the beneficial properties provided by semiconductors such as conductivity and rectification. In this contribution we present an integrated solution by blending semiconducting and ferroelectric polymers into phase separated networks. The polarisation field of the ferroelectric modulates the injection barrier at the semiconductor--metal contact. This combination allows for solution-processed non-volatile memory arrays with a simple cross-bar architecture that can be read-out non-destructively. Based on this general concept a non-volatile, reversible switchable Schottky diode with relatively fast programming time of shorter than 100 microseconds, long information retention time of longer than 10^ days, and high programming cycle endurance with non-destructive read-out is demonstrated.

A concept of ferroelectric microparticle propulsion thruster

International Nuclear Information System (INIS)

Yarmolich, D.; Vekselman, V.; Krasik, Ya. E.

2008-01-01

A space propulsion concept using charged ferroelectric microparticles as a propellant is suggested. The measured ferroelectric plasma source thrust, produced mainly by microparticles emission, reaches ∼9x10 -4 N. The obtained trajectories of microparticles demonstrate that the majority of the microparticles are positively charged, which permits further improvement of the thruster

Ferroelectric Phase Diagram of PVDF:PMMA

OpenAIRE

Li, Mengyuan; Stingelin, Natalie; Michels, Jasper J.; Spijkman, Mark-Jan; Asadi, Kamal; Feldman, Kirill; Blom, Paul W. M.; de Leeuw, Dago M.

2012-01-01

We have investigated the ferroelectric phase diagram of poly(vinylidene fluoride) (PVDF) and poly(methyl methacrylate) (PMMA). The binary nonequilibrium temperature composition diagram was determined and melting of alpha- and beta-phase PVDF was identified. Ferroelectric beta-PVDF:PMMA blend films were made by melting, ice quenching, and subsequent annealing above the glass transition temperature of PMMA, close to the melting temperature of PVDF. Addition of PMMA suppresses the crystallizatio...

Reversible optical control of macroscopic polarization in ferroelectrics

Science.gov (United States)

Rubio-Marcos, Fernando; Ochoa, Diego A.; Del Campo, Adolfo; García, Miguel A.; Castro, Germán R.; Fernández, José F.; García, José E.

2018-01-01

The optical control of ferroic properties is a subject of fascination for the scientific community, because it involves the establishment of new paradigms for technology1-9. Domains and domain walls are known to have a great impact on the properties of ferroic materials1-24. Progress is currently being made in understanding the behaviour of the ferroelectric domain wall, especially regarding its dynamic control10-12,17,19. New research is being conducted to find effective methodologies capable of modulating ferroelectric domain motion for future electronics. However, the practical use of ferroelectric domain wall motion should be both stable and reversible (rewritable) and, in particular, be able to produce a macroscopic response that can be monitored easily12,17. Here, we show that it is possible to achieve a reversible optical change of ferroelectric domains configuration. This effect leads to the tuning of macroscopic polarization and its related properties by means of polarized light, a non-contact external control. Although this is only the first step, it nevertheless constitutes the most crucial one in the long and complex process of developing the next generation of photo-stimulated ferroelectric devices.

Antiferromagnetic spin-orbitronics

KAUST Repository

Manchon, Aurelien; Saidaoui, Hamed Ben Mohamed; Ghosh, Sumit

2015-01-01

Antiferromagnets have long remained an intriguing and exotic state of matter, whose application has been restricted to enabling interfacial exchange bias in metallic and tunneling spin-valves [1]. Their role in the expanding field of applied spintronics has been mostly passive and the in-depth investigation of their basic properties mostly considered from a fundamental perspective.

Antiferromagnetic spin-orbitronics

KAUST Repository

Manchon, Aurelien

2015-05-01

Antiferromagnets have long remained an intriguing and exotic state of matter, whose application has been restricted to enabling interfacial exchange bias in metallic and tunneling spin-valves [1]. Their role in the expanding field of applied spintronics has been mostly passive and the in-depth investigation of their basic properties mostly considered from a fundamental perspective.

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials.

Science.gov (United States)

Grinberg, Ilya; West, D Vincent; Torres, Maria; Gou, Gaoyang; Stein, David M; Wu, Liyan; Chen, Guannan; Gallo, Eric M; Akbashev, Andrew R; Davies, Peter K; Spanier, Jonathan E; Rappe, Andrew M

2013-11-28

Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices, and for the coupling of light absorption with other functional properties. In these materials, the strong inversion symmetry breaking that is due to spontaneous electric polarization promotes the desirable separation of photo-excited carriers and allows voltages higher than the bandgap, which may enable efficiencies beyond the maximum possible in a conventional p-n junction solar cell. Ferroelectric oxides are also stable in a wide range of mechanical, chemical and thermal conditions and can be fabricated using low-cost methods such as sol-gel thin-film deposition and sputtering. Recent work has shown how a decrease in ferroelectric layer thickness and judicious engineering of domain structures and ferroelectric-electrode interfaces can greatly increase the current harvested from ferroelectric absorber materials, increasing the power conversion efficiency from about 10(-4) to about 0.5 per cent. Further improvements in photovoltaic efficiency have been inhibited by the wide bandgaps (2.7-4 electronvolts) of ferroelectric oxides, which allow the use of only 8-20 per cent of the solar spectrum. Here we describe a family of single-phase solid oxide solutions made from low-cost and non-toxic elements using conventional solid-state methods: [KNbO3]1 - x[BaNi1/2Nb1/2O3 - δ]x (KBNNO). These oxides exhibit both ferroelectricity and a wide variation of direct bandgaps in the range 1.1-3.8 electronvolts. In particular, the x = 0.1 composition is polar at room temperature, has a direct bandgap of 1.39 electronvolts and has a photocurrent density approximately 50 times larger than that of the classic ferroelectric (Pb,La)(Zr,Ti)O3 material. The ability of KBNNO to absorb three to six times more solar energy than the current ferroelectric materials suggests a route to viable ferroelectric semiconductor-based cells for solar energy conversion and

Ferroelectricity in high-density H{sub 2}O ice

Energy Technology Data Exchange (ETDEWEB)

Caracas, Razvan, E-mail: razvan.caracas@ens-lyon.fr, E-mail: rhemley@ciw.edu [CNRS, Laboratoire de Géologie de Lyon UMR5276, Ecole Normale Supérieure de Lyon, 46, alleé d’Italie, Université Claude-Bernard Lyon 1, Université de Lyon, 69364 Lyon cedex 07 (France); Hemley, Russell J., E-mail: razvan.caracas@ens-lyon.fr, E-mail: rhemley@ciw.edu [Geophysical Laboratory, 5251 Broad Branch Road NW, Carnegie Institution of Washington, Washington, DC 20015 (United States)

2015-04-07

The origin of longstanding anomalies in experimental studies of the dense solid phases of H{sub 2}O ices VII, VIII, and X is examined using a combination of first-principles theoretical methods. We find that a ferroelectric variant of ice VIII is energetically competitive with the established antiferroelectric form under pressure. The existence of domains of the ferroelectric form within anti-ferroelectric ice can explain previously observed splittings in x-ray diffraction data. The ferroelectric form is stabilized by density and is accompanied by the onset of spontaneous polarization. The presence of local electric fields triggers the preferential parallel orientation of the water molecules in the structure, which could be stabilized in bulk using new high-pressure techniques.

Noncollinear antiferromagnetic Mn3Sn films

Science.gov (United States)

Markou, A.; Taylor, J. M.; Kalache, A.; Werner, P.; Parkin, S. S. P.; Felser, C.

2018-05-01

Noncollinear hexagonal antiferromagnets with almost zero net magnetization were recently shown to demonstrate giant anomalous Hall effect. Here, we present the structural and magnetic properties of noncollinear antiferromagnetic Mn3Sn thin films heteroepitaxially grown on Y:ZrO2 (111) substrates with a Ru underlayer. The Mn3Sn films were crystallized in the hexagonal D 019 structure with c -axis preferred (0001) crystal orientation. The Mn3Sn films are discontinuous, forming large islands of approximately 400 nm in width, but are chemical homogeneous and characterized by near perfect heteroepitaxy. Furthermore, the thin films show weak ferromagnetism with an in-plane uncompensated magnetization of M =34 kA/m and coercivity of μ0Hc=4.0 mT at room temperature. Additionally, the exchange bias effect was studied in Mn3Sn /Py bilayers. Exchange bias fields up to μ0HEB=12.6 mT can be achieved at 5 K. These results show Mn3Sn films to be an attractive material for applications in antiferromagnetic spintronics.

Designing pseudocubic perovskites with enhanced nanoscale polarization

Energy Technology Data Exchange (ETDEWEB)

Levin, I. [Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA; Laws, W. J. [Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA; Wang, D. [Department of Materials Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom; Reaney, I. M. [Department of Materials Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

2017-11-20

A crystal-chemical framework has been proposed for the design of pseudocubic perovskites with nanoscale ferroelectric order, and its applicability has been demonstrated using a series of representative solid solutions that combined ferroelectric (K0.5Bi0.5TiO3, BaTiO3, and PbTiO3) and antiferroelectric (Nd-substituted BiFeO3) end members. The pseudocubic structures obtained in these systems exhibited distortions that were coherent on a scale ranging from sub-nanometer to tens of nanometers, but, in all cases, the macroscopic distortion remained unresolvable even if using high-resolution X-ray powder diffraction. Different coherence lengths for the local atomic displacements account for the distinctly different dielectric, ferroelectric, and electromechanical properties exhibited by the samples. The guidelines identified provide a rationale for chemically tuning the coherence length to obtain the desired functional response.

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

Science.gov (United States)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Tunable Microwave Filter Design Using Thin-Film Ferroelectric Varactors

Science.gov (United States)

Haridasan, Vrinda

Military, space, and consumer-based communication markets alike are moving towards multi-functional, multi-mode, and portable transceiver units. Ferroelectric-based tunable filter designs in RF front-ends are a relatively new area of research that provides a potential solution to support wideband and compact transceiver units. This work presents design methodologies developed to optimize a tunable filter design for system-level integration, and to improve the performance of a ferroelectric-based tunable bandpass filter. An investigative approach to find the origins of high insertion loss exhibited by these filters is also undertaken. A system-aware design guideline and figure of merit for ferroelectric-based tunable band- pass filters is developed. The guideline does not constrain the filter bandwidth as long as it falls within the range of the analog bandwidth of a system's analog to digital converter. A figure of merit (FOM) that optimizes filter design for a specific application is presented. It considers the worst-case filter performance parameters and a tuning sensitivity term that captures the relation between frequency tunability and the underlying material tunability. A non-tunable parasitic fringe capacitance associated with ferroelectric-based planar capacitors is confirmed by simulated and measured results. The fringe capacitance is an appreciable proportion of the tunable capacitance at frequencies of X-band and higher. As ferroelectric-based tunable capac- itors form tunable resonators in the filter design, a proportionally higher fringe capacitance reduces the capacitance tunability which in turn reduces the frequency tunability of the filter. Methods to reduce the fringe capacitance can thus increase frequency tunability or indirectly reduce the filter insertion-loss by trading off the increased tunability achieved to lower loss. A new two-pole tunable filter topology with high frequency tunability (> 30%), steep filter skirts, wide stopband

Nanoparticles of antiferromagnetic materials

DEFF Research Database (Denmark)

Madsen, Daniel Esmarch

2008-01-01

I denne Ph.D. afhandling studeres forskellige egenskaber ved antiferromagnetiske nanopartikler. I en ideel antiferromagnet er spinnene orienteret således at der ikke er et resulterende magnetisk moment. I nanopartikler af antiferromagnetiske materialer er denne kompensation på grund af forskellig...

A novel readout integrated circuit for ferroelectric FPA detector

Science.gov (United States)

Bai, Piji; Li, Lihua; Ji, Yulong; Zhang, Jia; Li, Min; Liang, Yan; Hu, Yanbo; Li, Songying

2017-11-01

Uncooled infrared detectors haves some advantages such as low cost light weight low power consumption, and superior reliability, compared with cryogenically cooled ones Ferroelectric uncooled focal plane array(FPA) are being developed for its AC response and its high reliability As a key part of the ferroelectric assembly the ROIC determines the performance of the assembly. A top-down design model for uncooled ferroelectric readout integrated circuit(ROIC) has been developed. Based on the optical thermal and electrical properties of the ferroelectric detector the RTIA readout integrated circuit is designed. The noise bandwidth of RTIA readout circuit has been developed and analyzed. A novel high gain amplifier, a high pass filter and a low pass filter circuits are designed on the ROIC. In order to improve the ferroelectric FPA package performance and decrease of package cost a temperature sensor is designed on the ROIC chip At last the novel RTIA ROIC is implemented on 0.6μm 2P3M CMOS silicon techniques. According to the experimental chip test results the temporal root mean square(RMS)noise voltage is about 1.4mV the sensitivity of the on chip temperature sensor is 0.6 mV/K from -40°C to 60°C the linearity performance of the ROIC chip is better than 99% Based on the 320×240 RTIA ROIC, a 320×240 infrared ferroelectric FPA is fabricated and tested. Test results shows that the 320×240 RTIA ROIC meets the demand of infrared ferroelectric FPA.

Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

KAUST Repository

Yao, Yingbang; Mak, C. L.

2014-01-01

were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis

Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

Science.gov (United States)

2016-04-19

the free energy of the system [3,4,8]. Intensive research has been aimed at bypassing the intrinsic size limits imposed by the depolarization field...Page 1 of 21   Ultrafast photovoltaic response in ferroelectric nanolayers Dan Daranciang1,2, Matthew J. Highland3, Haidan Wen4, Steve M. Young5...ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on

Functional Properties of Polydomain Ferroelectric Oxide Thin Films

NARCIS (Netherlands)

Houwman, Evert Pieter; Vergeer, Kurt; Koster, Gertjan; Rijnders, Augustinus J.H.M.; Nishikawa, H.; Iwata, N.; Endo, T.; Takamura, Y.; Lee, G-H.; Mele, P.

2017-01-01

The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed experimentally, instead of the two-domain structure

Depolarization corrections to the coercive field in thin-film ferroelectrics

International Nuclear Information System (INIS)

Dawber, M; Chandra, P; Littlewood, P B; Scott, J F

2003-01-01

Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 μm to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

Depolarization corrections to the coercive field in thin-film ferroelectrics

CERN Document Server

Dawber, M; Littlewood, P B; Scott, J F

2003-01-01

Empirically, the coercive field needed to reverse the polarization in a ferroelectric increases with decreasing film thickness. For ferroelectric films of 100 mu m to 100 nm in thickness the coercive field has been successfully described by a semi-empirical scaling law. Accounting for depolarization corrections, we show that this scaling behaviour is consistent with field measurements of ultrathin ferroelectric capacitors down to one nanometre in film thickness. Our results also indicate that the minimum film thickness, determined by a polarization instability, can be tuned by the choice of electrodes, and recommendations for next-generation ferroelectric devices are discussed. (letter to the editor)

Raman analysis of ferroelectric switching in niobium-doped lead zirconate titanate thin films

International Nuclear Information System (INIS)

Ferrari, P.; Ramos-Moore, E.; Guitar, M.A.; Cabrera, A.L.

2014-01-01

Characteristic Raman vibration modes of niobium-doped lead zirconate titanate (PNZT) are studied as a function of ferroelectric domain switching. The microstructure of PNZT is characterized by scanning electron microscopy and X-ray diffraction. Ferroelectric switching is achieved by applying voltages between the top (Au) and bottom (Pt) electrodes, while acquiring the Raman spectra in situ. Vibrational active modes associated with paraelectric and ferroelectric phases are identified after measuring above and below the ferroelectric Curie temperature, respectively. Changes in the relative intensities of the Raman peaks are observed as a function of the switching voltage. The peak area associated with the ferroelectric modes is analyzed as a function of the applied voltage within one ferroelectric polarization loop, showing local maxima around the coercive voltage. This behavior can be understood in terms of the correlation between vibrational and structural properties, since ferroelectric switching modifies the interaction between the body-centered atom (Zr, Ti or Nb) and the Pb–O lattice. - Highlights: • Electric fields induce structural distortions on ferroelectric perovskites. • Ferroelectric capacitor was fabricated to perform hysteresis loops. • Raman analysis was performed in situ during ferroelectric switching. • Raman modes show hysteresis and inflections around the coercive voltages. • Data can be understood in terms of vibrational–structural correlations

Proceedings of the 8th International Symposium on Applications of Ferroelectrics

Science.gov (United States)

Liu, M.; Safari, A.; Kingon, A.; Haertling, G.

1993-02-01

The eighth International Symposium on the Applications of Ferroelectrics was held in Greenville, SC, on August 30 to Sept 2, 1992. It was attended by approximately 260 scientists and engineers who presented nearly 200 oral and poster papers. The three plenary presentations covered ferroelectric materials which are currently moving into commercial exploitation or have strong potential to do so. These were (1) pyroelectric imaging, (2) ferroelectric materials integrated with silicon for use as micromotors and microsensors and (3) research activity in Japan on high permittivity materials for DRAM's. Invited papers covered such subjects as pyroelectric and electrooptic properties of thin films, photorefractive effects, ferroelectric polymers, piezoelectric transducers, processing of ferroelectrics, domain switching in ferroelectrics, thin film memories, thin film vacuum deposition techniques and the fabrication of chemically prepared PZT and PLZT thin films. The papers continued to reflect the large interest in ferroelectric thin films. It was encouraging that there have been substantial strides made in both the processing and understanding of the films in the last two years. It was equally clear, however, that much still remains to be done before reliable thin film devices will be available in the marketplace.

Antiferromagnetic CsCrF{sub 5} and canted antiferromagnetism in RbCrF{sub 5} and KCrF{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Jagličić, Zvonko, E-mail: zvonko.jaglicic@imfm.si [University of Ljubljana, Faculty of Civil and Geodetic Engineering, and Institute of Mathematics, Physics and Mechanics, Jadranska 19, 1000 Ljubljana (Slovenia); Mazej, Zoran, E-mail: zoran.mazej@ijs.si [Department of Inorganic Chemistry and Technology, Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia)

2017-07-15

Highlights: • Cr(IV) ions are antiferromagnetically coupled within chains in ACrF{sub 5} (A = Cs, Rb, K). • Small structural difference causes huge difference in magnetic properties below 10 K. • Canted antiferromagnetism has been observed in RbCrF{sub 5} and KCrF{sub 5} at low temperature. - Abstract: In ACrF{sub 5} (A = Cs, Rb, K), Cr(IV) ions are coordinated by six fluoride ligands where the resulting CrF{sub 6} octahedra share cis vertexes to form infinite chains of ([Cr{sup IV}F{sub 5}]{sup −}){sub n}. The geometry of the latter in Cs compound differs from that in K and Rb compounds. The results of investigations of the magnetic behaviour of these compounds have shown that an antiferromagnetic superexchange interaction is present within the chains with J{sub Cs} = −10.2 cm{sup −1}, J{sub Rb} = −13.3 cm{sup −1}, and J{sub K} = −13.1 cm{sup −1}. Additional ferromagnetic-like long-range ordering has been observed in KCrF{sub 5} and RbCrF{sub 5} below 6 K which can be explained, in a correlation with their crystal structures, as canted antiferromagnetism.

Temperature dependence of electronic transport property in ferroelectric polymer films

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.L.; Wang, J.L., E-mail: jlwang@mail.sitp.ac.cn; Tian, B.B.; Liu, B.L.; Zou, Y.H.; Wang, X.D.; Sun, S.; Sun, J.L., E-mail: jlsun@mail.sitp.ac.cn; Meng, X.J.; Chu, J.H.

2014-10-15

Highlights: • The ferroelectric polymer was fabricated by Langmuir–Blodgett method. • The electrons as the dominant injected carrier were conformed in the ferroelectric polymer films. • The leakage current conduction mechanisms in ferroelectric polymer were investigated. - Abstract: The leakage current mechanism of ferroelectric copolymer of polyvinylidene fluoride with trifluoroethylene prepared by Langmuir–Blodgett was investigated in the temperature range from 100 K to 350 K. The electron as the dominant injected carrier was observed in the ferroelectric copolymer films. The transport mechanisms in copolymer strongly depend on the temperature and applied voltage. From 100 K to 200 K, Schottky emission dominates the conduction. With temperature increasing, the Frenkel–Poole emission instead of the Schottky emission to conduct the carrier transport. When the temperature gets to 260 K, the leakage current becomes independent of temperature, and the space charge limited current conduction was observed.

Hybrid dual gate ferroelectric memory for multilevel information storage

KAUST Repository

Khan, Yasser

2015-01-01

Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.

Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

NARCIS (Netherlands)

Farokhipoor, S.; Noheda, Beatriz

2012-01-01

BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71 degrees domain walls. A smaller amount of 109 degrees domain walls are also present at the boundaries between two adjacent

Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

Science.gov (United States)

Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.

2016-05-01

BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ priced target.

Superconductivity and antiferromagnetism in cuprates and pnictides: Evidence of the role of Coulomb correlation

International Nuclear Information System (INIS)

Fan, J.D.; Malozovsky, Y.M.

2013-01-01

Highlights: • In a layered 2D cuprates the long-range order antiferromagnetism is driven mainly by the Van Hove singularity. • The long-range antiferromagnetism quickly disappear with doping away from the Van Hove singularity. • For pnictides the antiferromagnetism exists as a result of the nesting condition. • Since the doping steadily changes the nesting conditions, the antiferromagnetism and superconductivity may coexist. -- Abstract: We consider the Hubbard model in terms of the perturbative diagrammatic approach (UN F ⩽1) where the interaction between two electrons with antiparallel spins in the lowest order of perturbation is described by the short-range repulsive contact (on-site) interaction (U>0). We argue that in layered 2D cuprates the long-range order antiferromagnetism is driven mainly by the Van Hove singularity, whereas in the case of pnictides the antiferromagnetism exists as a result of the nesting condition. We show that when the interaction is quite strong (UN F ≈1) in the case of the Van Hove singularity the electron system undergoes the antiferromagnetic phase transition with the log-range order parameter and large insulating gap. The long-range antiferromagnetism quickly disappear, as shown, with the doping away from the Van Hove singularity, but the antiferromagnetic short-range correlation persists (UN F < 1) due to Coulomb repulsive interaction which is the mechanism for superconductivity in cuprates. We argue that in the case of pnictides the antiferromagnetism appears when the nesting conditions for the Fermi surface are met. Since the doping steadily changes the nesting conditions, the antiferromagnetism and superconductivity may coexist as has been observed in pnictides. We show that the proximity of the antiferromagnetism and superconductivity implies the repulsive interaction between electrons, which turns into attractive between quasiparticles as shown by the authors in the article published on the same issue as this one

Quantum Number Fractionalization in Antiferromagnets

OpenAIRE

Laughlin, R. B.; Giuliano, D.; Caracciolo, R.; White, O.

1998-01-01

This is a pedagogical introduction to the mathematics of 1-dimensional spin-1/2 antiferromagnets. Topics covered include the Haldane-Shastry Hamiltonian, vector ``supercharges'', conserved spin currents, spinons, the supersymmetric Kuramoto-Yokoyama Hamiltonian, and holons.

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.

Science.gov (United States)

Soni, Rohit; Petraru, Adrian; Meuffels, Paul; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Pertsev, Nikolay A; Kohlstedt, Hermann

2014-11-17

Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO(3) barrier, La(0.7)Sr(0.3)MnO(3) bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

Energy Technology Data Exchange (ETDEWEB)

Moghadam, Reza M. [Department; Xiao, Zhiyong [Department; Ahmadi-Majlan, Kamyar [Department; Grimley, Everett D. [Department; Bowden, Mark [Environmental; amp, Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ong, Phuong-Vu [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Chambers, Scott A. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Lebeau, James M. [Department; Hong, Xia [Department; Sushko, Peter V. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ngai, Joseph H. [Department

2017-09-13

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

Why is the electrocaloric effect so small in ferroelectrics?

Directory of Open Access Journals (Sweden)

G. G. Guzmán-Verri

2016-06-01

Full Text Available Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we derive from well-known microscopic models of ferroelectricity meaningful figures of merit for a wide class of ferroelectric materials. Such figures of merit provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipolar forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. In addition, we bring into question other widely used but empirical figures of merit and facilitate understanding of the recently observed secondary broad peak in the electrocalorics of relaxor ferroelectrics.

A prediction of rate-dependent behaviour in ferroelectric polycrystals

International Nuclear Information System (INIS)

Kim, Sang-Joo

2007-01-01

Rate-dependent behaviour of a polycrystalline ferroelectric material is predicted based on thermal activation theory and a representative volume element model. First, the behaviour of a ferroelectric single crystal is calculated from a recently proposed three-dimensional free energy model [S.J. Kim, S. Seelecke, Int. J. Solids Struct. 44 (2007) 1196-1209]. Then, from the calculated single crystal responses, poling behaviour of a ferroelectric polycrystal is obtained in three different ways, two representative volume element models and Gaussian integration method. It is found that a dodecahedron representative volume element consisting of 210 crystallites is the best choice among the three methods. Finally, the behaviour of a ferroelectric polycrystal under various electric and stress loads is calculated using the chosen RVE model. The calculated responses are compared qualitatively with experimental observations, and the effects of crystal orientation and polycrystallinity are discussed

Structural, dielectric and ferroelectric characterization of PZT thin films

Directory of Open Access Journals (Sweden)

Araújo E.B.

1999-01-01

Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

Science.gov (United States)

Kim, Do-Kyung; Lee, Gyu-Jeong; Lee, Jae-Hyun; Kim, Min-Hoi; Bae, Jin-Hyuk

2018-05-01

We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on–off ratio and a low-voltage reading operation.

High-performance solution-processed polymer ferroelectric field-effect transistors

NARCIS (Netherlands)

Naber, RCG; Tanase, C; Blom, PWM; Gelinck, GH; Marsman, AW; Touwslager, FJ; Setayesh, S; De Leeuw, DM; Naber, Ronald C.G.; Gelinck, Gerwin H.; Marsman, Albert W.; Touwslager, Fred J.

We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor

Ferroelectric tunneling element and memory applications which utilize the tunneling element

Science.gov (United States)

Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

2010-07-20

A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

Guest–host interaction in ferroelectric liquid crystal–nanoparticle

Indian Academy of Sciences (India)

Ferroelectric Cu-doped ZnO (Cu–ZnO) nanoparticles have been added to the pure ferroelectric liquid crystal (FLC) Felix 17/100. The nanoparticles are bigger in size as compared to FLC molecules; therefore, they distort the existing geometry of FLC matrix and set up an antiparallel correlation with the dipole moments of the ...

Spin Structure Analyses of Antiferromagnets

International Nuclear Information System (INIS)

Chung, Jae Ho; Song, Young Sang; Lee, Hak Bong

2010-05-01

We have synthesized series of powder sample of incommensurate antiferromagnetic multiferroics, (Mn, Co)WO 4 and Al doped Ba 0.5 Sr 1.5 Zn 2 Fe 12 O 22 , incommensurate antiferromagnetic multiferroics. Their spin structure was studied by using the HRPD. In addition, we have synthesized series of crystalline samples of incommensurate multiferroics, (Mn, Co)WO 4 and olivines. Their spin structure was investigated using neutron diffraction under high magnetic field. As a result, we were able to draw the phase diagram of (Mn, Co)WO 4 as a function of composition and temperature. We learned the how the spin structure changes with increased ionic substitution. Finally we have drawn the phase diagram of the multicritical olivine Mn2SiS4/Mn2GeS4 as a function of filed and temperature through the spin structure studies

Ferroelectrics under the Synchrotron Light: A Review

Directory of Open Access Journals (Sweden)

Luis E. Fuentes-Cobas

2015-12-01

Full Text Available Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS and X-ray absorption fine structure (XAFS experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described.

Ferroelectrics under the Synchrotron Light: A Review

Science.gov (United States)

Fuentes-Cobas, Luis E.; Montero-Cabrera, María E.; Pardo, Lorena; Fuentes-Montero, Luis

2015-01-01

Currently, an intensive search for high-performance lead-free ferroelectric materials is taking place. ABO3 perovskites (A = Ba, Bi, Ca, K and Na; B = Fe, Nb, Ti, and Zr) appear as promising candidates. Understanding the structure–function relationship is mandatory, and, in this field, the roles of long- and short-range crystal orders and interactions are decisive. In this review, recent advances in the global and local characterization of ferroelectric materials by synchrotron light diffraction, scattering and absorption are analyzed. Single- and poly-crystal synchrotron diffraction studies allow high-resolution investigations regarding the long-range average position of ions and subtle global symmetry break-downs. Ferroelectric materials, under the action of electric fields, undergo crystal symmetry, crystallite/domain orientation distribution and strain condition transformations. Methodological aspects of monitoring these processes are discussed. Two-dimensional diffraction clarify larger scale ordering: polycrystal texture is measured from the intensities distribution along the Debye rings. Local order is investigated by diffuse scattering (DS) and X-ray absorption fine structure (XAFS) experiments. DS provides information about thermal, chemical and displacive low-dimensional disorders. XAFS investigation of ferroelectrics reveals local B-cation off-centering and oxidation state. This technique has the advantage of being element-selective. Representative reports of the mentioned studies are described. PMID:28787814

Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

Energy Technology Data Exchange (ETDEWEB)

Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

2017-05-03

This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

On bistable states retention in ferroelectric Langmuir-Blodgett films

Science.gov (United States)

Geivandov, A. R.; Palto, S. P.; Yudin, S. G.; Fridkin, V. M.; Blinov, L. M.; Ducharme, S.

2003-08-01

A new insight into the nature of ferroelectricity is emerging from the study of ultra-thin ferroelectric films prepared of poly(vinylidene fluoride with trifluoroethylene) copolymer using Langmuir-Blodgett (LB) technique. Unique properties of these films indicate the existence of two-dimensional ferroelectricity. The retention of two polarized states in ferroelectric polymer LB films is studied using nonlinear dielectric spectroscopy. The technique is based on phase sensitive measurements of nonlinear dielectric spectroscopy. The amplitude of the current response at the 2nd harmonic of the applied voltage is proportional to the magnitude of the remnant polarization, while its phase gives the sign. We have found that 10 - 20 mm thick LB films can show fast switching time and long retention of the two polarized states. Nevertheless, LB films show a pronounced asymmetry in switching to the opposite states. Possible mechanisms of such behavior are discussed.

Switching Characteristics of Ferroelectric Transistor Inverters

Science.gov (United States)

Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

2010-01-01

This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

High-accuracy determination for optical indicatrix rotation in ferroelectric DTGS

OpenAIRE

O.S.Kushnir; O.A.Bevz; O.G.Vlokh

2000-01-01

Optical indicatrix rotation in deuterated ferroelectric triglycine sulphate is studied with the high-accuracy null-polarimetric technique. The behaviour of the effect in ferroelectric phase is referred to quadratic spontaneous electrooptics.

Structural, magnetic and dielectric properties of Pr-modified BiFeO3 multiferroic

International Nuclear Information System (INIS)

Varshney, Dinesh; Sharma, Poorva; Satapathy, S.; Gupta, P.K.

2014-01-01

Graphical abstract: -- Highlights: • BFO and Bi 0.95 Pr 0.05 FeO 3 prepared successfully via solid state reaction route. • XRD confirms rhombohedral structure with space group R3c. • Relaxation process is attributed to thermal motion and hopping of V O 2+ . • Magnetization is enhanced in Bi 0.95 Pr 0.05 FeO 3 sample. • Enhanced magnetization stem from suppression of the spiral spin modulation. -- Abstract: The structural, vibrational, magnetic and dielectric properties of polycrystalline BiFeO 3 and Bi 0.95 Pr 0.05 FeO 3 are investigated by combining X-ray diffraction, Raman scattering spectra, magnetometry and dielectric measurements. Structural symmetry with rhombohedral R3c phase is revealed for both parent and 5% Pr substitution at Bi site, serving no chemical pressure and causes no structural transition from R3c to any other phase is identified from X-ray diffraction patterns and Raman scattering spectra. The shifting of phonon modes towards higher frequency side is attributed to lower atomic mass of Pr ion as compared to Bi ion. The magnetic measurements at room temperature indicate that Pr substitution induces ferromagnetism and discerns large and non-zero remnant magnetization as compare to pristine BiFeO 3 . Both dielectric permittivity and loss factor of Bi 0.95 Pr 0.05 FeO 3 strongly decreases with increased frequency. Significant role of hopping of oxygen ion vacancies in Bi 0.95 Pr 0.05 FeO 3 is inferred from modulus spectra and ac conductivity analysis

Prospect for antiferromagnetic spintronics

Czech Academy of Sciences Publication Activity Database

Martí, Xavier; Fina, I.; Jungwirth, Tomáš

2015-01-01

Roč. 51, č. 4 (2015), s. 2900104 ISSN 0018-9464 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.277, year: 2015

Reversal of exchange bias in nanocrystalline antiferromagnetic-ferromagnetic bilayers

International Nuclear Information System (INIS)

Prados, C; Pina, E; Hernando, A; Montone, A

2002-01-01

The sign of the exchange bias in field cooled nanocrystalline antiferromagnetic-ferromagnetic bilayers (Co-O and Ni-O/permalloy) is reversed at temperatures approaching the antiferromagnetic (AFM) blocking temperature. A similar phenomenon is observed after magnetic training processes at similar temperatures. These effects can be explained assuming that the boundaries of nanocrystalline grains in AFM layers exhibit lower transition temperatures than grain cores

Antiferromagnetic phase of the gapless semiconductor V3Al

Science.gov (United States)

Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D.; Lewis, L. H.; Saúl, A. A.; Radtke, G.; Heiman, D.

2015-03-01

Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D 03 phase of V3Al was successfully synthesized via arc-melting and annealing. The AF properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing AF elements.

Antiferromagnetic MnN layer on the MnGa(001) surface

Energy Technology Data Exchange (ETDEWEB)

Guerrero-Sánchez, J., E-mail: guerrero@cnyn.unam.mx; Takeuchi, Noboru

2016-12-30

Highlights: • A ferromagnetic Gallium terminated surface is stable before N incorporation. • After N incorporation, an antiferromagnetic MnN layer becomes stable in a wide range of chemical potential. • Spin density distribution shows an antiferromagnetic/ferromagnetic (MnN/MnGa) arrangement at the surface. - Abstract: Spin polarized first principles total energy calculations have been applied to study the stability and magnetic properties of the MnGa(001) surface and the formation of a topmost MnN layer with the deposit of nitrogen. Before nitrogen adsorption, surface formation energies show a stable gallium terminated ferromagnetic surface. After incorporation of nitrogen atoms, the antiferromagnetic manganese terminated surface becomes stable due to the formation of a MnN layer (Mn-N bonding at the surface). Spin density distribution shows a ferromagnetic/antiferromagnetic arrangement in the first surface layers. This thermodynamically stable structure may be exploited to growth MnGa/MnN magnetic heterostructures as well as to look for exchange biased systems.

The operational mechanism of ferroelectric-driven organic resistive switches

NARCIS (Netherlands)

Kemerink, M.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

2012-01-01

The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

The operational mechanism of ferroelectric-driven organic resistive switches

NARCIS (Netherlands)

Kemerink, M.; Asadi, K. (Kamal); Blom, P.W.M.; Leeuw, de D.M.

2012-01-01

The availability of a reliable memory element is crucial for the fabrication of ‘plastic’ logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

The operational mechanism of ferroelectric-driven organic resistive switches

NARCIS (Netherlands)

Kemerink, Martijn; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.

The availability of a reliable memory element is crucial for the fabrication of 'plastic' logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field

Ferroelectric properties of tungsten bronze morphotropic phase boundary systems

International Nuclear Information System (INIS)

Oliver, J.R.; Neurgaonkar, R.R.; Cross, L.E.; Pennsylvania State Univ., University Park, PA

1989-01-01

Tungsten bronze ferroelectrics which have a morphotropic phase boundary (MPB) can have a number or enhanced dielectric, piezoelectric, and electrooptic properties compared to more conventional ferroelectric materials. The structural and ferroelectric properties of several MPB bronze systems are presented, including data from sintered and hot-pressed ceramics, epitaxial thin films, and bulk single crystals. Included among these are three systems which had not been previously identified as morphotropic. The potential advantages and limitations of these MPB systems are discussed, along with considerations of the appropriate growth methods for their possible utilization in optical, piezoelectric, or pyroelectric device applications

Giant enhancement in the ferroelectric field effect using a polarization gradient

Energy Technology Data Exchange (ETDEWEB)

Gu, Zongquan [Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Islam, Mohammad A. [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Department of Physics, State University of New York at Oswego, Oswego, New York 13126 (United States); Spanier, Jonathan E., E-mail: spanier@drexel.edu [Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104 (United States)

2015-10-19

Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO{sub 3} (LAO)-SrTiO{sub 3} (STO) interface. However, strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Here, through application of phenomenological Landau-Ginzburg-Devonshire theory and self-consistent Poisson-Schrödinger model calculations, we show how compositional grading of PbZr{sub 1−x}Ti{sub x}O{sub 3} ferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable breakthrough performance of ferroelectric non-volatile memories.

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

Science.gov (United States)

Heidler, Jonas; Yang, Sheng; Feng, Xinliang; Müllen, Klaus; Asadi, Kamal

2018-06-01

Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

Spin waves in antiferromagnetic FeF2

DEFF Research Database (Denmark)

Hutchings, M T; Rainford, B.D.; Guggenheim, H J

1970-01-01

Spin-wave dispersion in antiferromagnetic FeF2 has been investigated by inelastic neutron scattering using a chopper time-of-flight spectrometer. The single mode observed has a relatively flat dispersion curve rising from 53 cm-1 at the zone centre to 79 cm-1 at the zone boundary. A spin Hamilton......Spin-wave dispersion in antiferromagnetic FeF2 has been investigated by inelastic neutron scattering using a chopper time-of-flight spectrometer. The single mode observed has a relatively flat dispersion curve rising from 53 cm-1 at the zone centre to 79 cm-1 at the zone boundary. A spin...

Phase diagrams of ferroelectric nanocrystals strained by an elastic matrix

Science.gov (United States)

Nikitchenko, A. I.; Azovtsev, A. V.; Pertsev, N. A.

2018-01-01

Ferroelectric crystallites embedded into a dielectric matrix experience temperature-dependent elastic strains caused by differences in the thermal expansion of the crystallites and the matrix. Owing to the electrostriction, these lattice strains may affect polarization states of ferroelectric inclusions significantly, making them different from those of a stress-free bulk crystal. Here, using a nonlinear thermodynamic theory, we study the mechanical effect of elastic matrix on the phase states of embedded single-domain ferroelectric nanocrystals. Their equilibrium polarization states are determined by minimizing a special thermodynamic potential that describes the energetics of an ellipsoidal ferroelectric inclusion surrounded by a linear elastic medium. To demonstrate the stability ranges of such states for a given material combination, we construct a phase diagram, where the inclusion’s shape anisotropy and temperature are used as two parameters. The ‘shape-temperature’ phase diagrams are calculated numerically for PbTiO3 and BaTiO3 nanocrystals embedded into representative dielectric matrices generating tensile (silica glass) or compressive (potassium silicate glass) thermal stresses inside ferroelectric inclusions. The developed phase maps demonstrate that the joint effect of thermal stresses and matrix-induced elastic clamping of ferroelectric inclusions gives rise to several important features in the polarization behavior of PbTiO3 and BaTiO3 nanocrystals. In particular, the Curie temperature displays a nonmonotonic variation with the ellipsoid’s aspect ratio, being minimal for spherical inclusions. Furthermore, the diagrams show that the polarization orientation with respect to the ellipsoid’s symmetry axis is controlled by the shape anisotropy and the sign of thermal stresses. Under certain conditions, the mechanical inclusion-matrix interaction qualitatively alters the evolution of ferroelectric states on cooling, inducing a structural transition

High-Tc ferroelectrics and superconductors

International Nuclear Information System (INIS)

Muller, K.A.

1990-01-01

The meaning of the title refers to transition temperatures T c in ferroelectrics (FE) and superconductors (S). The highest T c 's in either field are observed in oxides: 1770 K in the ferroelectric La 2 TiO 7 and 125 K in the superconductor Tl 2 Ca 2 Cu 3 O 10 . Therefore, the question can be asked whether the observed high T c 's in oxide FE and S are a pure coincidence or whether there may be an underlying reason for it. This question is addressed first by recalling recent advances concerning anharmonic FE-properties and then by reviewing S-findings in the new compounds related to these properties

Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Manchon, Aurelien; Waintal, Xavier

2014-01-01

Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green's function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

Spin transfer torque in antiferromagnetic spin valves: From clean to disordered regimes

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2014-05-28

Current-driven spin torques in metallic spin valves composed of antiferromagnets are theoretically studied using the nonequilibrium Green\\'s function method implemented on a tight-binding model. We focus our attention on G-type and L-type antiferromagnets in both clean and disordered regimes. In such structures, spin torques can either rotate the magnetic order parameter coherently (coherent torque) or compete with the internal antiferromagnetic exchange (exchange torque). We show that, depending on the symmetry of the spin valve, the coherent and exchange torques can either be in the plane, ∝n×(q×n) or out of the plane ∝n×q, where q and n are the directions of the order parameter of the polarizer and the free antiferromagnetic layers, respectively. Although disorder conserves the symmetry of the torques, it strongly reduces the torque magnitude, pointing out the need for momentum conservation to ensure strong spin torque in antiferromagnetic spin valves.

Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

Science.gov (United States)

Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

2017-07-01

In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide

Directory of Open Access Journals (Sweden)

S. Riedel

2016-09-01

Full Text Available Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and CMOS-compatibility. However, the variety of physical phenomena connected to ferroelectricity allows a wider range of applications for these materials than ferroelectric memory. Especially mixed HfxZr1-xO2 thin films exhibit a broad compositional range of ferroelectric phase stability and provide the possibility to tailor material properties for multiple applications. Here it is shown that the limited thermal stability and thick-film capability of HfxZr1-xO2 can be overcome by a laminated approach using alumina interlayers.

Ferroelectricity and Piezoelectricity in Free-Standing Polycrystalline Films of Plastic Crystals.

Science.gov (United States)

Harada, Jun; Yoneyama, Naho; Yokokura, Seiya; Takahashi, Yukihiro; Miura, Atsushi; Kitamura, Noboru; Inabe, Tamotsu

2018-01-10

Plastic crystals represent a unique compound class that is often encountered in molecules with globular structures. The highly symmetric cubic crystal structure of plastic crystals endows these materials with multiaxial ferroelectricity that allows a three-dimensional realignment of the polarization axes of the crystals, which cannot be achieved using conventional molecular ferroelectric crystals with low crystal symmetry. In this work, we focused our attention on malleability as another characteristic feature of plastic crystals. We have synthesized the new plastic/ferroelectric ionic crystals tetramethylammonium tetrachloroferrate(III) and tetramethylammonium bromotrichloroferrate(III), and discovered that free-standing translucent films can be easily prepared by pressing powdered samples of these compounds. The thus obtained polycrystalline films exhibit ferroelectric polarization switching and a relatively large piezoelectric response at room temperature. The ready availability of functional films demonstrates the practical utility of such plastic/ferroelectric crystals, and considering the vast variety of possible constituent cations and anions, a wide range of applications should be expected for these unique and attractive functional materials.

Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review

Directory of Open Access Journals (Sweden)

Jianyi Liu

2014-09-01

Full Text Available This review covers methods and recent developments of the theoretical study of domain structures in ultrathin ferroelectric films. The review begins with an introduction to some basic concepts and theories (e.g., polarization and its modern theory, ferroelectric phase transition, domain formation, and finite size effects, etc. that are relevant to the study of domain structures in ultrathin ferroelectric films. Basic techniques and recent progress of a variety of important approaches for domain structure simulation, including first-principles calculation, molecular dynamics, Monte Carlo simulation, effective Hamiltonian approach and phase field modeling, as well as multiscale simulation are then elaborated. For each approach, its important features and relative merits over other approaches for modeling domain structures in ultrathin ferroelectric films are discussed. Finally, we review recent theoretical studies on some important issues of domain structures in ultrathin ferroelectric films, with an emphasis on the effects of interfacial electrostatics, boundary conditions and external loads.

The lineshape of inelastic neutron scattering in the relaxor ferroelectrics

International Nuclear Information System (INIS)

Ivanov, M.A.; Kozlovski, M.; Piesiewicz, T.; Stephanovich, V.A.; Weron, A.; Wymyslowski, A.

2005-01-01

The possibilities of theoretical and experimental investigations of relaxor ferroelectrics by inelastic neutron scattering method are considered. The simple model to description of the peculiarities of inelastic neutron scattering lineshapes in ferroelectric relaxors is suggested. The essence of this model is to consider the interaction of the phonon subsystem of relaxor ferroelectrics with the ensemble of defects and impurities. The modification of the Latin Hypercube Sampling (LHS) method is presented. The optimization of planning of experiment by the modified LHS method is considered [ru

Reversible spin texture in ferroelectric Hf O2

Science.gov (United States)

Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

2017-06-01

Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

Ferroelectric Cathodes in Transverse Magnetic Fields

International Nuclear Information System (INIS)

Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

2002-01-01

Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode

Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

Energy Technology Data Exchange (ETDEWEB)

Lopez-Varo, Pilar [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Bertoluzzi, Luca [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Bisquert, Juan, E-mail: bisquert@uji.es [Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló (Spain); Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Alexe, Marin [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Coll, Mariona [Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia (Spain); Huang, Jinsong [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States); Jimenez-Tejada, Juan Antonio [Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada (Spain); Kirchartz, Thomas [IEK5-Photovoltaik, Forschungszentrum Jülich, 52425 Jülich (Germany); Faculty of Engineering and CENIDE, University of Duisburg–Essen, Carl-Benz-Str. 199, 47057 Duisburg (Germany); Nechache, Riad; Rosei, Federico [INRS—Center Énergie, Matériaux et Télécommunications, Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2 (Canada); Yuan, Yongbo [Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0656 (United States)

2016-10-07

Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

International Nuclear Information System (INIS)

Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

2016-01-01

Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron–hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

Superconductivity and antiferromagnetism in heavy-electron systems

International Nuclear Information System (INIS)

Konno, R.; Ueda, K.

1989-01-01

Superconductivity and antiferromagnetism in heavy-electron systems are investigated from a general point of view. First we classify superconducting states in a simple cubic lattice, a body-centered tetragonal lattice, and a hexagonal close-packed lattice, having URu 2 Si 2 and UPt 3 in mind. For that purpose we take an approach to treat the effective couplings in real space. The approach is convenient to discuss the relation between the nature of fluctuations in the system and the superconducting states. When we assume that the antiferromagnetic fluctuations reported by neutron experiments are dominant, the most promising are some of the anisotropic singlet states and there remains the possibility for some triplet states too. Then we discuss the coupling between the two order parameters based on a Ginzburg-Landau theory. We derive a general expression of the coupling term. It is pointed out that the coupling constant can be large in heavy-electron systems. The general trend of the coexistence of the superconductivity and antiferromagnetism is discussed, and it is shown that the anisotropic states are generally more favorable to the coexistence than the conventional isotropic singlet. Experimental data of URu 2 Si 2 and UPt 3 are analyzed by the Ginzburg-Landau theory. According to the analysis URu 2 Si 2 has a small coupling constant and a large condensation energy of the antiferromagnetism. On the other hand, UPt 3 has a large coupling constant and a small condensation energy. It means that the specific-heat anomaly at T N should be small in UPt 3 and its superconductivity is easily destroyed when a large moment is formed

Theoretical model for thin ferroelectric films and the multilayer structures based on them

Energy Technology Data Exchange (ETDEWEB)

Starkov, A. S., E-mail: starkov@iue.tuwien.ac.at; Pakhomov, O. V. [St. Petersburg National Research Univeristy ITMO, Institute of Refrigeration and Biotechnologies (Russian Federation); Starkov, I. A. [Vienna University of Technology, Institute for Microelectronics (Austria)

2013-06-15

A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.

Theoretical model for thin ferroelectric films and the multilayer structures based on them

International Nuclear Information System (INIS)

Starkov, A. S.; Pakhomov, O. V.; Starkov, I. A.

2013-01-01

A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data

Theoretical model for thin ferroelectric films and the multilayer structures based on them

Science.gov (United States)

Starkov, A. S.; Pakhomov, O. V.; Starkov, I. A.

2013-06-01

A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.

Concepts of antiferromagnetic spintronics

Czech Academy of Sciences Publication Activity Database

Gomonay, O.; Jungwirth, Tomáš; Sinova, Jairo

2017-01-01

Roč. 11, č. 4 (2017), 1-8, č. článku 1700022. ISSN 1862-6254 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.032, year: 2016

Model calculation of thermal conductivity in antiferromagnets

Energy Technology Data Exchange (ETDEWEB)

Mikhail, I.F.I., E-mail: ifi_mikhail@hotmail.com; Ismail, I.M.M.; Ameen, M.

2015-11-01

A theoretical study is given of thermal conductivity in antiferromagnetic materials. The study has the advantage that the three-phonon interactions as well as the magnon phonon interactions have been represented by model operators that preserve the important properties of the exact collision operators. A new expression for thermal conductivity has been derived that involves the same terms obtained in our previous work in addition to two new terms. These two terms represent the conservation and quasi-conservation of wavevector that occur in the three-phonon Normal and Umklapp processes respectively. They gave appreciable contributions to the thermal conductivity and have led to an excellent quantitative agreement with the experimental measurements of the antiferromagnet FeCl{sub 2}. - Highlights: • The Boltzmann equations of phonons and magnons in antiferromagnets have been studied. • Model operators have been used to represent the magnon–phonon and three-phonon interactions. • The models possess the same important properties as the exact operators. • A new expression for the thermal conductivity has been derived. • The results showed a good quantitative agreement with the experimental data of FeCl{sub 2}.

Residual tensile stresses and piezoelectric properties in BiFeO3-Bi(Zn1/2Ti1/2O3-PbTiO3 ternary solid solution perovskite ceramics

Directory of Open Access Journals (Sweden)

Weilin Zheng

2016-08-01

Full Text Available For low dielectric loss perovskite-structured (1-x-yBiFeO3-xBi(Zn1/2Ti1/2O3-yPbTiO3 (BF-BZT-PT (x = 0.04-0.15 and y = 0.15-0.26 ceramics in rhombohedral/tetragonal coexistent phase, structural phase transitions were studied using differential thermal analyzer combined with temperature-dependent dielectric measurement. Two lattice structural phase transitions are disclosed in various BF-BZT-PT perovskites, which is different from its membership of BiFeO3 exhibiting just one lattice structural phase transition at Curie temperature TC= 830oC. Consequently, residual internal tensile stresses were revealed experimentally through XRD measurements on ceramic pellets and counterpart powders, which are reasonably attributed to special structural phase transition sequence of BF-BZT-PT solid solution perovskites. Low piezoresponse was observed and argued extrinsically resulting from residual tensile stresses pinning ferroelectric polarization switching. Post-annealing and subsequent quenching was found effective for eliminating residual internal stresses in those BZT-less ceramics, and good piezoelectric property of d33 ≥ 28 pC/N obtained for 0.70BF-0.08BZT-0.22PT and 0.05 wt% MnO2-doped 0.70BF-0.04BZT-0.26PT ceramics with TC ≥ 640oC, while it seemed no effective for those BZT-rich BF-BZT-PT ceramics with x = 0.14 and 0.15 studied here.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.; Chshiev, M.; Manchon, Aurelien

2015-01-01

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Controlling the spin-torque efficiency with ferroelectric barriers

KAUST Repository

Useinov, A.

2015-02-11

Nonequilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schrödinger equation for electron tunneling in the presence of interfacial screening are obtained by combining Bessel and Airy functions. We demonstrate that the spin transfer torque efficiency, and more generally the bias dependence of tunneling magneto- and electroresistance, can be controlled by switching the ferroelectric polarization of the barrier. In particular, the critical voltage at which the in-plane torque changes sign can be strongly enhanced or reduced depending on the direction of the ferroelectric polarization of the barrier. This effect provides a supplementary way to electrically control the current-driven dynamic states of the magnetization and related magnetic noise in spin transfer devices.

Fast Ferroelectric L-band Tuner

International Nuclear Information System (INIS)

Kazakov, S. Yu.; Yakovlev, V. P.; Hirshfield, J. L.; Kanareykin, A. D.; Nenasheva, E. A.

2006-01-01

Description is given of a preliminary conceptual design for a tuner that employs a new ferroelectric ceramic that allows fast changes in coupling between the SRF acceleration structure of a linac and the external RF feeding line. The switching time of this device is in the range of a few microseconds. Utilization of this tuner is predicted to decrease Ohmic losses in the acceleration structure and thereby to reduce the power consumption of the linac. Using parameters of the TESLA-800 collider as an example, it is shown that it may be possible to reduce the ac mains power consumption by 12 MW, or about by 10%. The design of the tuner that is described allows reduced pulsed and average heating of the ferroelectric ceramics

Transparent Ferroelectric Capacitors on Glass

Directory of Open Access Journals (Sweden)

Daniele Sette

2017-10-01

Full Text Available We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO transparent electrodes with an interdigitated electrode (IDE design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range. Fully crystallized Pb(Zr0.52Ti0.48O3 (PZT films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

Quantum switching of polarization in mesoscopic ferroelectrics

International Nuclear Information System (INIS)

Sa de Melo, C.A.

1996-01-01

A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. copyright 1996 The American Physical Society

Investigation of the switching characteristics in ferroelectrics by first-order reversal curve diagrams

International Nuclear Information System (INIS)

Stancu, Alexandru; Mitoseriu, Liliana; Stoleriu, Laurentiu; Piazza, Daniele; Galassi, Carmen; Ricinschi, Dan; Okuyama, Masanori

2006-01-01

First-order reversal curves (FORC) diagrams are proposed for describing the switching properties in ferroelectric materials. The method is applied for Pb(Zr,Ti)O 3 (PZT) ferroelectric ceramics and films with different P(E) hysteresis and microstructural characteristics. The separation of the reversible and irreversible contributions to the ferroelectric polarization is explained in terms of microstructural characteristics of the investigated samples. The influence of parameters as field frequency, crystallite orientation, ferroelectric fatigue and porosity degree on the FORC diagrams is discussed

Thick-film processing of Pb5Ge3O11-based ferroelectric glass-ceramics

International Nuclear Information System (INIS)

Cornejo, I.A.; Haun, M.J.

1996-01-01

Processing techniques were investigated to produce c-axis orientation, or texture, of ferroelectric Pb 5 Ge 3 O 11 -based glass-ceramic compositions during crystallization of amorphous thick-film printed samples from the Pb 5 Ge 3 O 11 -PbTiO 3 (PG-PT) and Pb 5 Ge 3 O 11 -Pb(Zr 1/2 Ti 1/2 )O 3 (PG-PZT) systems. In these systems the PG crystallized into a ferroelectric phase, producing a multiple ferroelectric phase composite at low temperatures, PG-PT or PG-PZT. In this way the non-ferroelectric component of traditional ferroelectric glass-ceramics was eliminated

Phase-Field Simulations of Topological Structures and Topological Phase Transitions in Ferroelectric Oxide Heterostructures

Science.gov (United States)

Zijian Hong

of insulating STO is further revealed, which shows that a rich phase diagram can be formed by simply tuning the thickness of this layer. Wave-like polar spiral phase is simulated by substituting part of the PTO with BiFeO3 (BFO) in the PTO/STO superlattice (i.e., in a (PTO) 4/(BFO)4/(PTO)4/(STO)12 tricolor system) which has demonstrate ordered polar vortex lattice. This spiral phase is made up of semi-vortex cores that are floating up-down in the ferroelectric PTO layers, giving rise to a net in-plane polarization. An increase of Curie temperature and topological to regular domain transition temperature (over 200 K) is observed, due to the higher Curie temperature and larger spontaneous polarization in BFO layers. This unidirectional spiral state can be reversibly switched by experimentally feasible in-plane field, which evolves into a metastable vortex structure in-between two spiral phases with opposite in-plane directions. (Abstract shortened by ProQuest.).

Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

KAUST Repository

Manchon, Aurelien

2017-01-01

We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

A new method to study ferroelectrics using the remanent Henkel plots

Science.gov (United States)

Vopson, Melvin M.

2018-05-01

Analysis of experimental curves constructed from dc demagnetization and isothermal remanent magnetization known as Henkel and delta M plots, have served for over 53 years as an important tool for characterization of interactions in ferromagnets. In this article we address the question whether the same experimental technique could be applied to the study of ferroelectric systems. The successful measurement of the equivalent dc depolarisation and isothermal remanent polarization curves and the construction of the Henkel and delta P plots for ferroelectrics is reported here. Full measurement protocol is provided together with experimental examples for two ferroelectric ceramic samples. This new measurement technique is an invaluable experimental tool that could be used to further advance our understanding of ferroelectric materials and their applications.

Single-site approximation for the s-f model of antiferromagnetic semiconductors

International Nuclear Information System (INIS)

Takahashi, Masao; Nolting, Wolfgang

2001-01-01

For the s-f model of an antiferromagnetic semiconductor, the effect of the antiferromagnetic ordering of the localized spins on the conduction-electron state is investigated over a wide range of exchange strengths by combining the effective-medium approach with the Green's function in the 2x2 sublattice Bloch function representation. The band splitting due to the reduced magnetic Brillouin zone occurs below the Neel temperature. There is a marked effect of the thermal fluctuation of the antiferromagnetically ordered localized spins on the conduction electron at the energies near the top (bottom) of the lower- (higher-) energy subband

Four-state ferroelectric spin-valve

Czech Academy of Sciences Publication Activity Database

Quindeau, A.; Fina, I.; Martí, Xavier; Apachitei, G.; Ferrer, P.; Nicklin, C.; Pippel, E.; Hesse, D.; Alexe, M.

2015-01-01

Roč. 5, May (2015), 09749 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic and spintronic devices * ferroelectrics and multiferroics Subject RIV: BE - Theoretical Physics Impact factor: 5.228, year: 2015

A qualitative test for intrinsic size effect on ferroelectric phase transitions

OpenAIRE

Wang, Jin; Tagantsev, Alexander K.; Setter, Nava

2010-01-01

The size effect in ferroelectrics is treated as a competition between the geometrical symmetry of the ferroelectric sample and its crystalline symmetry. The manifestation of this competition is shown to be polarization rotation, which is driven by temperature and/or size variations, thus providing a qualitative indication of intrinsic finite size effect on ferroelectrics. The concept is demonstrated in a simple case of PbTiO3 nanowires having their axis parallel to [111]C direction, where the...

Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films

KAUST Repository

Hu, Weijin

2014-11-12

We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

Strain tunable ferroelectric and dielectric properties of BaZrO3

International Nuclear Information System (INIS)

Zhang, Yajun; Liu, Man; Shimada, Takahiro; Kitamura, Takayuki; Wang, Jie

2014-01-01

The crucial role of epitaxial (in-plane) strain on the structural, electronic, energetic, ferroelectric, and dielectric properties of BaZrO 3 (BZO) is investigated using density-functional theory calculations. We demonstrate that the BZO crystal subjected to a critical compressive (or tensile) strain exhibits non-trivial spontaneous polarization that is higher than that of well-known ferroelectrics BaTiO 3 , while the BZO crystal is essentially paraelectric in the absence of strain. The electronic structure and Born-effective-charge analyses elucidate that the strain-induced paraelectric-to-ferroelectric transition is driven by the orbital hybridization of d-p electrons between zirconium and oxygen. Through the strain-induced paraelectric-to-ferroelectric phase transition, the dielectric response of BZO is significantly enhanced by the in-plane strain. The tensile strain increases the in-plane dielectric constant by a factor of seven with respect to that without the strain, while the compression tends to enhance the out-of-plane dielectric response. Therefore, strain engineering makes BZO an important electromechanical material due to the diversity in ferroelectric and dielectric properties.

Pinning, rotation, and metastability of BiFeO3 cycloidal domains in a magnetic field

Science.gov (United States)

Fishman, Randy S.

2018-01-01

Earlier models for the room-temperature multiferroic BiFeO3 implicitly assumed that a very strong anisotropy restricts the domain wave vectors q to the threefold-symmetric axis normal to the static polarization P . However, recent measurements demonstrate that the domain wave vectors q rotate within the hexagonal plane normal to P away from the magnetic field orientation m . We show that the previously neglected threefold anisotropy K3 restricts the wave vectors to lie along the threefold axis in zero field. Taking m to lie along a threefold axis, the domain with q parallel to m remains metastable below Bc 1≈7 T. Due to the pinning of domains by nonmagnetic impurities, the wave vectors of the other two domains start to rotate away from m above 5.6 T, when the component of the torque τ =M ×B along P exceeds a threshold value τpin. Since τ =0 when m ⊥q , the wave vectors of those domains never become completely perpendicular to the magnetic field. Our results explain recent measurements of the critical field as a function of field orientation, small-angle neutron scattering measurements of the wave vectors, as well as spectroscopic measurements with m along a threefold axis. The model developed in this paper also explains how the three multiferroic domains of BiFeO3 for a fixed P can be manipulated by a magnetic field.

Overview of one transistor type of hybrid organic ferroelectric non-volatile memory

Institute of Scientific and Technical Information of China (English)

Young; Tea; Chun; Daping; Chu

2015-01-01

Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.

R-curve behaviour of ferroelectric ceramics

International Nuclear Information System (INIS)

Egorov, N.Ya.; Kramarov, S.O.

2004-01-01

The attempt's made to identify and evaluate the regularities of developing the fractures in the ferroelectric ceramics and also-study the effect of the polishing operation on the strength characteristics of the piezoceramics. The R-curve behaviour in the ferroelectric ceramics is studied on the samples of the barium titanate and lead zirconate-titanate by the four-point bending with controlled surface fractures. It is established that increasing curve of resistance to the fracture growth is observed in the piezoceramics under the conditions of the fracture stable growth. The results obtained on the polished samples prove that the mechanical processing introduces the compression surface stresses into the piezoceramic materials [ru

Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

Energy Technology Data Exchange (ETDEWEB)

Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

2018-01-25

For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical-electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this.

Surface-screening mechanisms in ferroelectric thin films and their effect on polarization dynamics and domain structures

Science.gov (United States)

Kalinin, Sergei V.; Kim, Yunseok; Fong, Dillon D.; Morozovska, Anna N.

2018-03-01

For over 70 years, ferroelectric materials have been one of the central research topics for condensed matter physics and material science, an interest driven both by fundamental science and applications. However, ferroelectric surfaces, the key component of ferroelectric films and nanostructures, still present a significant theoretical and even conceptual challenge. Indeed, stability of ferroelectric phase per se necessitates screening of polarization charge. At surfaces, this can lead to coupling between ferroelectric and semiconducting properties of material, or with surface (electro) chemistry, going well beyond classical models applicable for ferroelectric interfaces. In this review, we summarize recent studies of surface-screening phenomena in ferroelectrics. We provide a brief overview of the historical understanding of the physics of ferroelectric surfaces, and existing theoretical models that both introduce screening mechanisms and explore the relationship between screening and relevant aspects of ferroelectric functionalities starting from phase stability itself. Given that the majority of ferroelectrics exist in multiple-domain states, we focus on local studies of screening phenomena using scanning probe microscopy techniques. We discuss recent studies of static and dynamic phenomena on ferroelectric surfaces, as well as phenomena observed under lateral transport, light, chemical, and pressure stimuli. We also note that the need for ionic screening renders polarization switching a coupled physical–electrochemical process and discuss the non-trivial phenomena such as chaotic behavior during domain switching that stem from this. ).

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

Directory of Open Access Journals (Sweden)

Aditya Chauhan

2015-11-01

Full Text Available With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

Anomalous Z2 antiferromagnetic topological phase in pressurized SmB6

Science.gov (United States)

Chang, Kai-Wei; Chen, Peng-Jen

2018-05-01

Antiferromagnetic materials, whose time-reversal symmetry is broken, can be classified into the Z2 topology if they respect some specific symmetry. Since the theoretical proposal, however, no materials have been found to host such Z2 antiferromagnetic topological (Z2-AFT ) phase to date. Here we demonstrate that the topological Kondo insulator SmB6 can be a Z2-AFT system when pressurized to undergo an antiferromagnetic phase transition. In addition to proposing the possible candidate for a Z2-AFT material, in this work we also illustrate the anomalous topological surface states of the Z2-AFT phase which have not been discussed before. Originating from the interplay between the topological properties and the antiferromagnetic surface magnetization, the topological surface states of the Z2-AFT phase behave differently as compared with those of a topological insulator. Besides, the Z2-AFT insulators are also found promising in the generation of tunable spin currents, which is an important application in spintronics.

Interrelationship between flexoelectricity and strain gradient elasticity in ferroelectric nanofilms: A phase field study

Science.gov (United States)

Jiang, Limei; Xu, Xiaofei; Zhou, Yichun

2016-12-01

With the development of the integrated circuit technology and decreasing of the device size, ferroelectric films used in nano ferroelectric devices become thinner and thinner. Along with the downscaling of the ferroelectric film, there is an increasing influence of two strain gradient related terms. One is the strain gradient elasticity and the other one is flexoelectricity. To investigate the interrelationship between flexoelectricity and strain gradient elasticity and their combined effect on the domain structure in ferroelectric nanofilms, a phase field model of flexoelectricity and strain gradient elasticity on the ferroelectric domain evolution is developed based on Mindlin's theory of strain-gradient elasticity. Weak form is derived and implemented in finite element formulations for numerically solving the model equations. The simulation results show that upper bounds for flexoelectric coefficients can be enhanced by increasing strain gradient elasticity coefficients. While a large flexoelectricity that exceeds the upper bound can induce a transition from a ferroelectric state to a modulated/incommensurate state, a large enough strain gradient elasticity may lead to a conversion from an incommensurate state to a ferroelectric state. Strain gradient elasticity and the flexoelectricity have entirely opposite effects on polarization. The observed interrelationship between the strain gradient elasticity and flexoelectricity is rationalized by an analytical solution of the proposed theoretical model. The model proposed in this paper could help us understand the mechanism of phenomena observed in ferroelectric nanofilms under complex electromechanical loads and provide some guides on the practical application of ferroelectric nanofilms.

Giant electrocaloric effect in a cracked ferroelectrics

Science.gov (United States)

Huang, Cheng; Yang, Hai-Bing; Gao, Cun-Fa

2018-04-01

The electrocaloric effect (ECE) is the temperature change in a material induced by electrical field variation under adiabatic condition. Considering an external electric load applied on a cracked ferroelectric solid, a non-uniform electric field would be induced at the crack tip, and thus, incompatible strain field and local stress concentration would be generated around it. Furthermore, the enormous strain energy and the electrostatic energy would affect the polarization switching of the ferroelectric solid, important for the electrocaloric response. In this paper, the large negative and positive ECEs in a ferroelectric sheet with a conducting crack are investigated by the phase field method with the consideration of time-dependent Ginzburg-Landau equation. The numerical calculations indicated that the polarization field generates a sharp rise during the domain transition from polydomain to monodomain under a certain electric load. Large negative ECEs, about -10.21 K and -7.55 K, are obtained at 135 °C and 85 °C, respectively. The domain transition temperature is much lower than the Curie temperature, which enlarges the existence scope of the large ECE in ferroelectrics. The results also imply that the domain transition from a multi-domain state to a single domain takes place with the minimization of total free energy, which involves the courses of the electric field, stress field, temperature, and polarization interaction. Therefore, the non-uniform distributions of the stress-electric fields induced by the crack play an important role in ECE.

Spin Transport in Ferromagnetic and Antiferromagnetic Textures

KAUST Repository

Akosa, Collins A.

2016-12-07

In this dissertation, we provide an accurate description of spin transport in magnetic textures and in particular, we investigate in detail, the nature of spin torque and magnetic damping in such systems. Indeed, as will be further discussed in this thesis, the current-driven velocity of magnetic textures is related to the ratio between the so-called non-adiabatic torque and magnetic damping. Uncovering the physics underlying these phenomena can lead to the optimal design of magnetic systems with improved efficiency. We identified three interesting classes of systems which have attracted enormous research interest (i) Magnetic textures in systems with broken inversion symmetry: We investigate the nature of magnetic damping in non-centrosymmetric ferromagnets. Based on phenomenological and microscopic derivations, we show that the magnetic damping becomes chiral, i.e. depends on the chirality of the magnetic texture. (ii) Ferromagnetic domain walls, skyrmions and vortices: We address the physics of spin transport in sharp disordered magnetic domain walls and vortex cores. We demonstrate that upon spin-independent scattering, the non-adiabatic torque can be significantly enhanced. Such an enhancement is large for vortex cores compared to transverse domain walls. We also show that the topological spin currents owing in these structures dramatically enhances the non-adiabaticity, an effect unique to non-trivial topological textures (iii) Antiferromagnetic skyrmions: We extend this study to antiferromagnetic skyrmions and show that such an enhanced topological torque also exist in these systems. Even more interestingly, while such a non-adiabatic torque inuences the undesirable transverse velocity of ferromagnetic skyrmions, in antiferromagnetic skyrmions, the topological non-adiabatic torque directly determines the longitudinal velocity. As a consequence, scaling down the antiferromagnetic skyrmion results in a much more efficient spin torque.

Scattering of neutrons and critical phenomena in antiferromagnetic fermi liquid

International Nuclear Information System (INIS)

Akhiezer, I.A.; Barannik, E.A.

1980-01-01

The scattering of slow neutrons in an antiferromagnetic with collectivized magnetic electrons is considered and it is shown to significantly differ from the neutron scattering in an antiferromagnetic with localized magnetic electrons. The behaviour of scattering cross sections and fluctuation correlators near the Neel point is studied. These magnitudes are shown to increase with the critical index r=-1 [ru

Possible coexistence of antiferromagnetism and superconductivity in the Hubbard model

International Nuclear Information System (INIS)

Su Zhaobin; Dong Jinming; Yu Lu; Shen Juelian

1988-01-01

The Hubbard model in the nearly half-filled case was studied in the mean field approximation using the effective Hamiltonian approach. Both antiferromagnetic order parameter and condensation of singlet pairs were considered. In certain parameter ranges the coexistence of antiferromagnetism and superconductivity is energetically favourable. Relevance to the high temperature superconductivity and other theoretical approaches is also discussed. (author). 10 refs, 3 figs

Fast Ferroelectric L-Band Tuner for Superconducting Cavities

Energy Technology Data Exchange (ETDEWEB)

Jay L. Hirshfield

2011-03-01

Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

Fast Ferroelectric L-Band Tuner for Superconducting Cavities

International Nuclear Information System (INIS)

Hirshfield, Jay L.

2011-01-01

Analysis and modeling is presented for a fast microwave tuner to operate at 700 MHz which incorporates ferroelectric elements whose dielectric permittivity can be rapidly altered by application of an external voltage. This tuner could be used to correct unavoidable fluctuations in the resonant frequency of superconducting cavities in accelerator structures, thereby greatly reducing the RF power needed to drive the cavities. A planar test version of the tuner has been tested at low levels of RF power, but at 1300 MHz to minimize the physical size of the test structure. This test version comprises one-third of the final version. The tests show performance in good agreement with simulations, but with losses in the ferroelectric elements that are too large for practical use, and with issues in bonding of ferroelectric elements to the metal walls of the tuner structure.

Heterogeneous Ferroelectric Solid Solutions Phases and Domain States

CERN Document Server

Topolov, Vitaly

2012-01-01

The book deals with perovskite-type ferroelectric solid solutions for modern materials science and applications, solving problems of complicated heterophase/domain structures near the morphotropic phase boundary and applications to various systems with morphotropic phases. In this book domain state–interface diagrams are presented for the interpretation of heterophase states in perovskite-type ferroelectric solid solutions. It allows to describe the stress relief in the presence of polydomain phases, the behavior of unit-cell parameters of coexisting phases and the effect of external electric fields. The novelty of the book consists in (i) the first systematization of data about heterophase states and their evolution in ferroelectric solid solutions (ii) the general interpretation of heterophase and domain structures at changing temperature, composition or electric field (iii) the complete analysis of interconnection domain structures, unit-cell parameters changes, heterophase structures and stress relief.

Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

International Nuclear Information System (INIS)

Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

2008-01-01

Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy.

Science.gov (United States)

Domingo, N; Farokhipoor, S; Santiso, J; Noheda, B; Catalan, G

2017-08-23

We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO 3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

Electrical transport through Pb(Zr,Ti)O3 p-n and p-p heterostructures modulated by bound charges at a ferroelectric surface: Ferroelectric p-n diode

Science.gov (United States)

Watanabe, Yukio

1999-05-01

Current through (Pb,La)(Zr,Ti)O3 ferroelectrics on perovskite semiconductors is found to exhibit diode characteristics of which polarity is universally determined by the carrier conduction-type semiconductors. A persisting highly reproducible resistance modulation by a dc voltage, which has a short retention, is observed and is ascribed to a band bending of the ferroelectric by the formation of charged traps. This interpretation is consistent with a large relaxation current observed at a low voltage. On the other hand, a reproducible resistance modulation by a pulse voltage, which has a long retention, is observed in metal/(Pb,La)(Zr,Ti)O3/SrTiO3:Nb but not in metal/(Pb,La)(Zr,Ti)O3/(La,Sr)2CuO4 and is attributed to a possible band bending due to the spontaneous polarization (P) switching. The observed current voltage (IV) characteristics, the polarity dependence, the relaxation, and the modulation are explicable, if we assume a p-n or a p-p junction at the ferroelectric semiconductor interface (p: hole conduction type, n: electron conduction type). The analysis suggests that an intrinsically inhomogeneous P (∇P) near the ferroelectric/metal interface is likely very weak or existing in a very thin layer, when a reaction of the metal with the ferroelectric is eliminated. Additionally, the various aspects of transport through ferroelectrics are explained as a transport in the carrier depleted region.

Nuclear spin-magnon relaxation in two-dimensional Heisenberg antiferromagnets

International Nuclear Information System (INIS)

Wal, A.J. van der.

1979-01-01

Experiments are discussed of the dependence on temperature and magnetic field of the longitudinal relaxation time of single crystals of antiferromagnetically ordered insulators, i.e. in the temperature range below the Neel temperature and in fields up to the spin-flop transition. The experiments are done on 19 F nuclei in the Heisenberg antiferromagnets K 2 MnF 4 and K 2 NiF 4 , the magnetic structure of which is two-dimensional quadratic. (C.F.)

Electronic energy spectra in antiferromagnetic media with broken reciprocity

International Nuclear Information System (INIS)

Vitebsky, I.; Edelkind, J.; Bogachek, E.N.; Scherbakov, A.G.; Landman, U.

1997-01-01

Electronic energy spectra var-epsilon(q) of antiferromagnetically ordered media may display nonreciprocity; that is, the energies corresponding to Bloch states with wave numbers q and -q may be different. In this paper a simple Kronig-Penney model, which includes a staggered microscopic magnetic and electric fields of the proper symmetry, is employed to estimate the magnitude of nonreciprocity effects in systems such as antiferromagnetically ordered crystals as well as periodical layered structures. copyright 1997 The American Physical Society

Composition driven structural instability in perovskite ferroelectrics

Directory of Open Access Journals (Sweden)

Chao Xu

2017-04-01

Full Text Available Ferroelectric solid solutions usually exhibit enhanced functional properties at the morphotropic phase boundary separating two ferroelectric phases with different orientations of polarization. The underlying mechanism is generally associated with polarization rotational instability and the flattened free energy profile. In this work we show that the polarization extensional instability can also be induced at the morphotropic phase boundary beyond the reported polar-nonpolar phase boundary. The piezoelectricity enhanced by this mechanism exhibits excellent thermal stability, which helps to develop high performance piezoelectric materials with good temperature stability.

Quantum fluctuations in insulating ferroelectrics

International Nuclear Information System (INIS)

Riseborough, Peter S.

2010-01-01

Graphical abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility. - Abstract: It has been proposed that in a ferroelectric insulator, an applied magnetic field may couple the transverse phonon modes and produce left and right circularly polarized phonon modes which are no longer degenerate. We quantize the theory and examine the effects of quantal fluctuations. In particular, we show that the zero-point fluctuations result in a large diamagnetic contribution to the magnetic susceptibility.

Magnetic behaviour of interacting antiferromagnetic nanoparticles

International Nuclear Information System (INIS)

Markovich, V; Jung, G; Gorodetsky, G; Puzniak, R; Wisniewski, A; Skourski, Y; Mogilyanski, D

2012-01-01

Magnetic properties of interacting La 0.2 Ca 0.8 MnO 3 nanoparticles have been investigated. The field-induced transition from antiferromagnetic (AFM) to ferromagnetic (FM) state in the La 0.2 Ca 0.8 MnO 3 bulk has been observed at exceptionally high magnetic fields. For large particles, the field-induced transition widens while magnetization progressively decreases. In small particles the transition is almost fully suppressed. The thermoremanence and isothermoremanence curves constitute fingerprints of irreversible magnetization originating from nanoparticle shells. We have ascribed the magnetic behaviour of nanoparticles to a core-shell scenario with two main magnetic contributions; one attributed to the formation of a collective state formed by FM clusters in frustrated coordination at the surfaces of interacting AFM nanoparticles and the other associated with inner core behaviour as a two-dimensional diluted antiferromagnet. (paper)

Dynamic Control of Tunneling Conductance in Ferroelectric Tunnel Junctions

International Nuclear Information System (INIS)

Zou Ya-Yi; Zhou Yan; Chew Khian-Hooi

2013-01-01

We investigate the dynamic characteristics of electric polarization P(t) in a ferroelectric junction under ac applied voltage and stress, and calculate the frequency response and the cut-off frequency f 0 , which provides a reference for the upper limit of the working frequency. Our study might be significant for sensor and memory applications of nanodevices based on ferroelectric junctions

Defect-Induced Hedgehog Polarization States in Multiferroics

Science.gov (United States)

Li, Linze; Cheng, Xiaoxing; Jokisaari, Jacob R.; Gao, Peng; Britson, Jason; Adamo, Carolina; Heikes, Colin; Schlom, Darrell G.; Chen, Long-Qing; Pan, Xiaoqing

2018-03-01

Continuous developments in nanotechnology require new approaches to materials synthesis that can produce novel functional structures. Here, we show that nanoscale defects, such as nonstoichiometric nanoregions (NSNRs), can act as nano-building blocks for creating complex electrical polarization structures in the prototypical multiferroic BiFeO3 . An array of charged NSNRs are produced in BiFeO3 thin films by tuning the substrate temperature during film growth. Atomic-scale scanning transmission electron microscopy imaging reveals exotic polarization rotation patterns around these NSNRs. These polarization patterns resemble hedgehog or vortex topologies and can cause local changes in lattice symmetries leading to mixed-phase structures resembling the morphotropic phase boundary with high piezoelectricity. Phase-field simulations indicate that the observed polarization configurations are mainly induced by charged states at the NSNRs. Engineering defects thus may provide a new route for developing ferroelectric- or multiferroic-based nanodevices.

A neutron scattering study on the antiferromagnet in an exchange biased systems

Energy Technology Data Exchange (ETDEWEB)

Solina, Danica; Lott, Dieter; Fenske, Jochen; Schreyer, Andreas [Institute of Materials Research, GKSS Research Centre, Geesthacht (Germany); Schmidt, Wolfgang [Institut-Laue-Langevin, Grenoble (France); Wu, Yu-Chang; Lai, Chih-Huang [Department of Materials Science and Engineering, National Tsing Hua University, HsinChu (China)

2008-07-01

The magnetic structure of single crystal antiferromagnetic PtMn that biases CoFe has been studied using neutron scattering. Polarized neutron reflection (PNR) was used to determine the switching behaviour of the ferromagnetic layer and polarized neutron diffraction (PND) to probe the magnetic configuration of the anti-ferromagnetic layer. PNR suggests a combination of rotation and domain formation. Changes were observed in the PND patterns taken at points around the hysteresis loop. The diffraction data has been simulated with a 'twisting' of part of the anti-ferromagnetic layer as the ferromagnetic layer changes.

"Negative capacitance" in resistor-ferroelectric and ferroelectric-dielectric networks: Apparent or intrinsic?

Science.gov (United States)

Saha, Atanu K.; Datta, Suman; Gupta, Sumeet K.

2018-03-01

In this paper, we describe and analytically substantiate an alternate explanation for the negative capacitance (NC) effect in ferroelectrics (FE). We claim that the NC effect previously demonstrated in resistance-ferroelectric (R-FE) networks does not necessarily validate the existence of "S" shaped relation between polarization and voltage (according to Landau theory). In fact, the NC effect can be explained without invoking the "S"-shaped behavior of FE. We employ an analytical model for FE (Miller model) in which the steady state polarization strictly increases with the voltage across the FE and show that despite the inherent positive FE capacitance, reduction in FE voltage with the increase in its charge is possible in a R-FE network as well as in a ferroelectric-dielectric (FE-DE) stack. This can be attributed to a large increase in FE capacitance near the coercive voltage coupled with the polarization lag with respect to the electric field. Under certain conditions, these two factors yield transient NC effect. We analytically derive conditions for NC effect in R-FE and FE-DE networks. We couple our analysis with extensive simulations to explain the evolution of NC effect. We also compare the trends predicted by the aforementioned Miller model with Landau-Khalatnikov (L-K) model (static negative capacitance due to "S"-shape behaviour) and highlight the differences between the two approaches. First, with an increase in external resistance in the R-FE network, NC effect shows a non-monotonic behavior according to Miller model but increases according to L-K model. Second, with the increase in ramp-rate of applied voltage in the FE-DE stack, NC effect increases according to Miller model but decreases according to L-K model. These results unveil a possible way to experimentally validate the actual reason of NC effect in FE.

Dynamic rotor mode in antiferromagnetic nanoparticles

DEFF Research Database (Denmark)

Lefmann, Kim; Jacobsen, H.; Garde, J.

2015-01-01

We present experimental, numerical, and theoretical evidence for an unusual mode of antiferromagnetic dynamics in nanoparticles. Elastic neutron scattering experiments on 8-nm particles of hematite display a loss of diffraction intensity with temperature, the intensity vanishing around 150 K...

Resonant tunneling across a ferroelectric domain wall

Science.gov (United States)

Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.

2018-04-01

Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

Differential geometric aspects of the theory of ferroelectricity

International Nuclear Information System (INIS)

Khosiainov, V.T.

1988-11-01

In connection with the problem of the ferroelectricity a differential formalism is developed as a tool to describe the fine electronic properties in solids. This includes the gauge invariant definition of the differentiation in k-space (position operator), the notion of holonomy group and characteristic gauge field in k-space of electron states. A variational principle and possible solutions of resulting field equations are discussed. A criterion for the appearance of the ferroelectricity is proposed. (author). 5 refs

Long range order in the ground state of two-dimensional antiferromagnets

International Nuclear Information System (INIS)

Neves, E.J.; Perez, J.F.

1985-01-01

The existence of long range order is shown in the ground state of the two-dimensional isotropic Heisenberg antiferromagnet for S >= 3/2. The method yields also long range order for the ground state of a larger class of anisotropic quantum antiferromagnetic spin systems with or without transverse magnetic fields. (Author) [pt

Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

Energy Technology Data Exchange (ETDEWEB)

Draginda, Yu. A., E-mail: lbf@ns.crys.ras.ru; Yudin, S G; Lazarev, V V; Yablonskii, S V; Palto, S P [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

2012-05-15

The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

Role of the antiferromagnetic bulk spins in exchange bias

Energy Technology Data Exchange (ETDEWEB)

Schuller, Ivan K. [Center for Advanced Nanoscience and Physics Department, University of California San Diego, La Jolla, CA 92093 (United States); Morales, Rafael, E-mail: rafael.morales@ehu.es [Department of Chemical-Physics & BCMaterials, University of the Basque Country UPV/EHU (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Batlle, Xavier [Departament Física Fonamental and Institut de Nanociència i Nanotecnologia, Universitat de Barcelona, c/ Martí i Franqués s/n, 08028 Barcelona, Catalonia (Spain); Nowak, Ulrich [Department of Physics, University of Konstanz, 78464 Konstanz (Germany); Güntherodt, Gernot [Physics Institute (IIA), RWTH Aachen University, Campus RWTH-Melaten, 52074 Aachen (Germany)

2016-10-15

This “Critical Focused Issue” presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this bulk, pinned uncompensated moments as a new type of a ferromagnet which has a low total moment, an ordering temperature given by the AFM Néel temperature, with parallel aligned moments randomly distributed on the regular AFM lattice. - Highlights: • We address the role of bulk antiferromagnetic spins in the exchange bias phenomenon. • Significant experiments on how bulk AFM spins determine exchange bias are highlighted. • We explain the model that accounts for experimental results.

Role of the antiferromagnetic bulk spins in exchange bias

International Nuclear Information System (INIS)

Schuller, Ivan K.; Morales, Rafael; Batlle, Xavier; Nowak, Ulrich; Güntherodt, Gernot

2016-01-01

This “Critical Focused Issue” presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this bulk, pinned uncompensated moments as a new type of a ferromagnet which has a low total moment, an ordering temperature given by the AFM Néel temperature, with parallel aligned moments randomly distributed on the regular AFM lattice. - Highlights: • We address the role of bulk antiferromagnetic spins in the exchange bias phenomenon. • Significant experiments on how bulk AFM spins determine exchange bias are highlighted. • We explain the model that accounts for experimental results.

CuInP₂S₆ Room Temperature Layered Ferroelectric.

Science.gov (United States)

Belianinov, A; He, Q; Dziaugys, A; Maksymovych, P; Eliseev, E; Borisevich, A; Morozovska, A; Banys, J; Vysochanskii, Y; Kalinin, S V

2015-06-10

We explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces, whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V-likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. The existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing "graphene family".

Effects of Bi doping on dielectric and ferroelectric properties

Indian Academy of Sciences (India)

[Pb0.95(La1−Bi)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of ...

High-frequency effects in antiferromagnetic Sr3Ir2O7

Science.gov (United States)

Williamson, Morgan; Seinige, Heidi; Shen, Shida; Wang, Cheng; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

Antiferromagnetic (AFM) spintronics is one of many promising routes for `beyond the CMOS' technologies where unique properties of AFM materials are exploited to achieve new and improved functionalities. AFMs are especially interesting for high-speed memory applications thanks to their high natural frequencies. Here we report the effects of high-frequency (microwave) currents on transport properties of antiferromagnetic Mott insulator Sr3Ir2O7. The microwaves at 3-7 GHz were found to affect the material's current-voltage characteristic and produce resonance-like features that we tentatively associate with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by NSF Grants DMR-1207577, DMR-1265162, DMR-1600057, and DMR-1122603, and by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-CRG4-2626.

Antiferromagnetic spin phase transition in nuclear matter with effective Gogny interaction

International Nuclear Information System (INIS)

Isayev, A.A.; Yang, J.

2004-01-01

The possibility of ferromagnetic and antiferromagnetic phase transitions in symmetric nuclear matter is analyzed within the framework of a Fermi liquid theory with the effective Gogny interaction. It is shown that at some critical density nuclear matter with the D1S effective force undergoes a phase transition to the antiferromagnetic spin state (opposite directions of neutron and proton spins). The self-consistent equations of spin polarized nuclear matter with the D1S force have no solutions corresponding to ferromagnetic spin ordering (the same direction of neutron and proton spins) and, hence, the ferromagnetic transition does not appear. The dependence of the antiferromagnetic spin polarization parameter as a function of density is found at zero temperature

Relativistic Néel-Order Fields Induced by Electrical Current in Antiferromagnets

KAUST Repository

Železný, J.

2014-10-06

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intraband and to the intrinsic interband spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we consider bulk Mn2Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modeled by a Rashba spin-orbit coupling. We propose an antiferromagnetic memory device with electrical writing and reading.

Relativistic Néel-Order Fields Induced by Electrical Current in Antiferromagnets

KAUST Repository

Železný , J.; Gao, H.; Vý borný , K.; Zemen, J.; Mašek, J.; Manchon, Aurelien; Wunderlich, J.; Sinova, Jairo; Jungwirth, T.

2014-01-01

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced fields analogous to the intraband and to the intrinsic interband spin-orbit fields previously reported in ferromagnets with a broken inversion-symmetry crystal. To illustrate their rich physics and utility, we consider bulk Mn2Au with the two spin sublattices forming inversion partners, and a 2D square-lattice antiferromagnet with broken structural inversion symmetry modeled by a Rashba spin-orbit coupling. We propose an antiferromagnetic memory device with electrical writing and reading.

Influence of Co doping on structural, optical and magnetic properties of BiFeO3 films deposited on quartz substrates by sol-gel method

Science.gov (United States)

Peng, Lin; Deng, Hongmei; Tian, Jianjun; Ren, Qing; Peng, Cheng; Huang, Zhipeng; Yang, Pingxiong; Chu, Junhao

2013-03-01

Multiferroic BiFe1-xCoxO3 (x = 0, 0.03, 0.05, 0.1) thin films have been prepared on quartz substrates using a sol-gel technique. X-ray diffraction data confirms that Co atoms have been successfully incorporated into the host lattice. The scanning electron microscopy (SEM) exhibits that the surface morphologies of BiFe0.97Co0.03O3 and BiFe0.95Co0.05O3 thin films become more compact and uniform. With increasing Co dopant, the position of A1-1 and E-4 modes shift towards the lower wavenumber indicates that Co doping induces structural distortion of BiFeO3. With increasing Co composition, the fundamental absorption edges of BiFe1-xCoxO3 films show red shift. Furthermore, transmittance spectra demonstrates that the optical band gap of BiFe1-xCoxO3 films decreases from 2.66 eV to 2.53 eV with the increase of Co from x = 0 to 0.1. At the wavelength of 720 nm, the refractive index decreases and the extinction coefficient increases with increasing the amount of Co. Optical properties reveal that Co doping in BiFeO3 provides preliminary research for optoelectronic devices and infrared detectors. Compared with BiFeO3 prepared under similar conditions, the remanent magnetization Mr of BiFe1-xCoxO3 (x = 0.03, 0.05, 0.1) thin films significantly enhanced, which provides potential applications in information storage.

Weyl magnons in breathing pyrochlore antiferromagnets

Science.gov (United States)

Li, Fei-Ye; Li, Yao-Dong; Kim, Yong Baek; Balents, Leon; Yu, Yue; Chen, Gang

2016-01-01

Frustrated quantum magnets not only provide exotic ground states and unusual magnetic structures, but also support unconventional excitations in many cases. Using a physically relevant spin model for a breathing pyrochlore lattice, we discuss the presence of topological linear band crossings of magnons in antiferromagnets. These are the analogues of Weyl fermions in electronic systems, which we dub Weyl magnons. The bulk Weyl magnon implies the presence of chiral magnon surface states forming arcs at finite energy. We argue that such antiferromagnets present a unique example, in which Weyl points can be manipulated in situ in the laboratory by applied fields. We discuss their appearance specifically in the breathing pyrochlore lattice, and give some general discussion of conditions to find Weyl magnons, and how they may be probed experimentally. Our work may inspire a re-examination of the magnetic excitations in many magnetically ordered systems. PMID:27650053

Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

International Nuclear Information System (INIS)

Krivoruchko, V.N.

1996-01-01

The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

Surface Acoustic Waves in ferroelectrics

Czech Academy of Sciences Publication Activity Database

Tarasenko A., Nataliya; Jastrabík, Lubomír; Tarasenko, Alexander

2004-01-01

Roč. 298, - (2004), s. 325-333 ISSN 0015-0193 R&D Projects: GA AV ČR IBS1010203 Keywords : Rayleigh waves * ferroelectric films * phase transition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.517, year: 2004

Ferroelectric and ferroelastic domain structures in piezoelectric ceramics

International Nuclear Information System (INIS)

Bursill, L.A.; Julin Peng.

1990-01-01

A discussion of the results of conventional and high-resolution high-voltage electron microscopic studies of two ferroelectrics, barium sodium niobate and lead zirconium titanate is presented. It is shown that a rich variety of information such as ferroelectric and/or ferroelastic domains discommensurations versus antiphase boundaries, extended versus localized chemical defects and multiphase versus grain boundaries, become accessible in both single crystal and polycrystalline piezoelectrics, when a combination of high-resolution and conventional electron optical techniques is used. 15 refs., 8 figs

Manipulating the ferroelectric polarization state of BaTiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Datta, S.; Rioult, M.; Stanescu, D.; Magnan, H.; Barbier, A., E-mail: antoine.barbier@cea.fr

2016-05-31

Controlling the ferroelectric polarization at macroscopic or microscopic levels is crucial in the framework of the development of ferroelectric materials used in yet challenging photo-electrochemical (PEC) cells and spintronic applications. We report here on polarization methods allowing to electrically polarize prototypical samples of BaTiO{sub 3} (001) films. Epitaxial single crystalline layers were grown up to a thickness of 25 nm by atomic oxygen assisted molecular beam epitaxy on 1 at.% Nb doped SrTiO{sub 3} (001) single crystals. The samples were both microscopically and macroscopically polarized using Piezoresponse Force Microscopy and electrochemical poling in an electrolyte respectively. In addition we demonstrate the possibility to retrieve a quasi-native mixed ferroelectric polarization state after annealing. These polarization methods may be applied to many other ferroelectric thin films. - Highlights: • Ferroelectricity of BaTiO{sub 3} layers can be micro- and macroscopically controlled. • Microscopic ferroelectric domains are defined with piezoresponse force microscopy. • Poling in a LiClO{sub 4} electrolyte is a macroscopic poling method. • Air annealing above the Curie temperature “resets” the polarization state.

Phase pure synthesis of BiFeO3 nanopowders using diverse precursor via co-precipitation method

International Nuclear Information System (INIS)

Shami, M. Yasin; Awan, M.S.; Anis-ur-Rehman, M.

2011-01-01

Highlights: → Synthesized phase pure BiFeO 3 using diverse precursor by co-precipitation method. → Optimized synthesis and processing parameters. → Thermal behavior, structure and microstructure were analyzed. → Resistivity vs temperature and dielectric constant vs frequency were measured. → Multiferroicity at room temperature was confirmed by M-H and P-E loops. - Abstract: Amorphous powder of BiFeO 3 (BFO) was synthesized at low-temperature (80 deg. C) by co-precipitation method. Optimal synthesis conditions for phase pure BFO were obtained. Powders were calcined in the temperature range from 400 to 600 deg. C for 1 h. Iso-statically pressed powder was sintered at 500 deg. C for 2 h. Differential scanning calorimetric thermo-gram guided for phase transition, crystallization and melting temperatures. X-ray diffraction confirmed the amorphous nature of as synthesized powder and phase formation of calcined powders. Calcination at temperature ≥400 deg. C resulted in nano crystalline powders with perovskite structure. Average crystallite size increased with the increase in calcination temperature. Scanning electron microscopic studies revealed dense granular microstructure of the sintered samples. The sintered samples exhibited high dc resistivity at room temperature which decreased with the increase in temperature. Dielectric constant, dielectric loss tangent and ac conductivity measurements were carried out in the frequency range (10 Hz to 2 MHz). The samples responded weak electric and magnetic polarization at room temperature with unsaturated and hysteresis free loops, respectively.

Spin Wave Theory in Two-Dimensional Coupled Antiferromagnets

Science.gov (United States)

Shimahara, Hiroshi

2018-04-01

We apply spin wave theory to two-dimensional coupled antiferromagnets. In particular, we primarily examine a system that consists of small spins coupled by a strong exchange interaction J1, large spins coupled by a weak exchange interaction J2, and an anisotropic exchange interaction J12 between the small and large spins. This system is an effective model of the organic antiferromagnet λ-(BETS)2FeCl4 in its insulating phase, in which intriguing magnetic phenomena have been observed, where the small and large spins correspond to π electrons and 3d spins, respectively. BETS stands for bis(ethylenedithio)tetraselenafulvalene. We obtain the antiferromagnetic transition temperature TN and the sublattice magnetizations m(T) and M(T) of the small and large spins, respectively, as functions of the temperature T. When T increases, m(T) is constant with a slight decrease below TN, even where M(T) decreases significantly. When J1 ≫ J12 and J2 = 0, an analytical expression for TN is derived. The estimated value of TN and the behaviors of m(T) and M(T) agree with the observations of λ-(BETS)2FeCl4.

Determination of ferroelectric contributions to electromechanical response by frequency dependent piezoresponse force microscopy.

Science.gov (United States)

Seol, Daehee; Park, Seongjae; Varenyk, Olexandr V; Lee, Shinbuhm; Lee, Ho Nyung; Morozovska, Anna N; Kim, Yunseok

2016-07-28

Hysteresis loop analysis via piezoresponse force microscopy (PFM) is typically performed to probe the existence of ferroelectricity at the nanoscale. However, such an approach is rather complex in accurately determining the pure contribution of ferroelectricity to the PFM. Here, we suggest a facile method to discriminate the ferroelectric effect from the electromechanical (EM) response through the use of frequency dependent ac amplitude sweep with combination of hysteresis loops in PFM. Our combined study through experimental and theoretical approaches verifies that this method can be used as a new tool to differentiate the ferroelectric effect from the other factors that contribute to the EM response.

Graphene Dirac point tuned by ferroelectric polarization field

Science.gov (United States)

Wang, Xudong; Chen, Yan; Wu, Guangjian; Wang, Jianlu; Tian, Bobo; Sun, Shuo; Shen, Hong; Lin, Tie; Hu, Weida; Kang, Tingting; Tang, Minghua; Xiao, Yongguang; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2018-04-01

Graphene has received numerous attention for future nanoelectronics and optoelectronics. The Dirac point is a key parameter of graphene that provides information about its carrier properties. There are lots of methods to tune the Dirac point of graphene, such as chemical doping, impurities, defects, and disorder. In this study, we report a different approach to tune the Dirac point of graphene using a ferroelectric polarization field. The Dirac point can be adjusted to near the ferroelectric coercive voltage regardless its original position. We have ensured this phenomenon by temperature-dependent experiments, and analyzed its mechanism with the theory of impurity correlation in graphene. Additionally, with the modulation of ferroelectric polymer, the current on/off ratio and mobility of graphene transistor both have been improved. This work provides an effective method to tune the Dirac point of graphene, which can be readily used to configure functional devices such as p-n junctions and inverters.

Above-room-temperature ferroelectricity and antiferroelectricity in benzimidazoles

Science.gov (United States)

Horiuchi, Sachio; Kagawa, Fumitaka; Hatahara, Kensuke; Kobayashi, Kensuke; Kumai, Reiji; Murakami, Youichi; Tokura, Yoshinori

2012-12-01

The imidazole unit is chemically stable and ubiquitous in biological systems; its proton donor and acceptor moieties easily bind molecules into a dipolar chain. Here we demonstrate that chains of these amphoteric molecules can often be bistable in electric polarity and electrically switchable, even in the crystalline state, through proton tautomerization. Polarization-electric field (P-E) hysteresis experiments reveal a high electric polarization ranging from 5 to 10 μC cm-2 at room temperature. Of these molecules, 2-methylbenzimidazole allows ferroelectric switching in two dimensions due to its pseudo-tetragonal crystal symmetry. The ferroelectricity is also thermally robust up to 400 K, as is that of 5,6-dichloro-2-methylbenzimidazole (up to ~373 K). In contrast, three other benzimidazoles exhibit double P-E hysteresis curves characteristic of antiferroelectricity. The diversity of imidazole substituents is likely to stimulate a systematic exploration of various structure-property relationships and domain engineering in the quest for lead- and rare-metal-free ferroelectric devices.

Vertex functions at finite momentum: Application to antiferromagnetic quantum criticality

Science.gov (United States)

Wölfle, Peter; Abrahams, Elihu

2016-02-01

We analyze the three-point vertex function that describes the coupling of fermionic particle-hole pairs in a metal to spin or charge fluctuations at nonzero momentum. We consider Ward identities, which connect two-particle vertex functions to the self-energy, in the framework of a Hubbard model. These are derived using conservation laws following from local symmetries. The generators considered are the spin density and particle density. It is shown that at certain antiferromagnetic critical points, where the quasiparticle effective mass is diverging, the vertex function describing the coupling of particle-hole pairs to the spin density Fourier component at the antiferromagnetic wave vector is also divergent. Then we give an explicit calculation of the irreducible vertex function for the case of three-dimensional antiferromagnetic fluctuations, and show that it is proportional to the diverging quasiparticle effective mass.

Ferroelectric materials for FeRAMs; FeRAM yo kyoyudentai zairyo

Energy Technology Data Exchange (ETDEWEB)

Miyasaka, Y [NEC Corp., Tokyo (Japan)

1998-10-01

Studies to utilize bistable spontaneous polarization of ferroelectric materials for non-volatile memory have already been started in the 1950`s. Recently, a possibility was indicated on a high-speed non-volatile RAM (FeRAM) with memory cell configuration combined with switching transistors as in DRAMs. This situation has led to performing very active studies on ferroelectric materials and electrode materials used in ferroelectric film cell capacitors. This paper summarizes the above research and development circumstances, as well as their future problems. On the other hand of having shown excellent fatigue resistance in the SrBi2Ta209(SBT) system, improvement has progressed steadily on the Pb(ZR, Ti)03 (abbreviated to PZT) system, which retains the mainstream position as the ferroelectric material for FeRAMs. Aiming at realizing a high integration FeRAM in the future will require discussions on property changes due to use of lower temperature and micronization in film formation, further improvement in relation with degradation such as in imprint, and elucidation of the mechanism. 31 refs., 3 figs.

Charging and switching of ferroelectrets: how much can ferroelectrets behave like ferroelectrics?

International Nuclear Information System (INIS)

Schwoediauer, R.; Graz, I.; Bauer, S.

2004-01-01

Dielectrics with good charge storage capability, so called charge electrets, are non or weakly-polar materials. Despite their non-polar nature porous charge electrets with internally charged surfaces can exhibit very pronounced piezoelectricity. Such systems have been termed 'ferroelectrets' and they have been receiving growing attention over the last few years. Their puzzling and unexpected features resemble very much those normally known from traditional ferroelectrics: ferroelectrets are piezo- and pyroelectric, their polarization can be reversed by means of an external field and electrical as well as mechanical hysteresis loops were observed. As conventional ferroelectrics are different and more complicated than ferromagnets, so are ferroelectrets different and more complex than most ferroelectrics. Here we report about the very different charging and switching mechanism in ferroelectrets, both in simple model-systems and in less simple foam structures. These mechanisms are crucial and form the basis for the striking phenomenological similarities to ferroelectrics. We also want to address some of the specific peculiarities and pitfalls related to present ferroelectrets and their characterization. Interfacial charge injection at high electric fields and anelastic non-linearities, for instance, can be the cause for false ferroelectric-like hysteresis effects which do not reflect any polarization reversal. Our contribution is an attempt towards a more comprehensive picture of how much ferroelectrets behave like ferroelectrics. (author)

Giant Magnetoelectric Energy Conversion Utilizing Inter-Ferroelectric Phase Transformations in Ferroics

Science.gov (United States)

Finkel, Peter; Staruch, Margo

Phase transition-based electromechanical transduction permits achieving a non-resonant broadband mechanical energy conversion see (Finkel et al Actuators, 5 [1] 2. (2015)) , the idea is based on generation high energy density per cycle , at least 100x of magnitude larger than linear piezoelectric type generators in stress biased [011]cut relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystal can generate reversible strain >0.35% at remarkably low fields (0.1 MV/m) for tens of millions of cycles. Recently we demonstrated that large strain and polarization rotation can be generated for over 40 x 106cycles with little fatigue by realization of reversible ferroelectric-ferroelectric phase transition in [011] cut PIN-PMN-PT relaxor ferroelectric single crystal while sweeping through the transition with a low applied electric field <0.18 MV/m under mechanical stress. This methodology was extended in the present work to propose magnetoelectric (ME) composite hybrid system comprised of highly magnetostrictive alloymFe81.4Ga18.6 (Galfenol), and lead indium niobate-lead magnesium niobate-lead titanate (PIN-PMN-PT) domain engineered relaxor ferroelectric single crystal. A small time-varying magnetic field applied to this system causes the magnetostrictive element to expand, and the resulting stress forces the phase change in the relaxor ferroelectric single crystal. ME coupling coefficient was fond to achieve 80 V/cm Oe near the FR-FO phase transition that is at least 100X of magnitude higher than any currently reported values.

Innovative architectures in ferroelectric multi-materials: Chemistry, interfaces and strain

Directory of Open Access Journals (Sweden)

C. Elissalde

2015-06-01

Full Text Available Breakthroughs can be expected in multi-component ceramics by adjusting the phase assembly and the micro–nanostructure. Controlling the architecture of multi-materials at different scales is still challenging and provides a great opportunity to broaden the range of functionalities in the field of ferroelectric-based ceramics. We used the potentialities of Spark Plasma Sintering (SPS to control a number of key parameters regarding the properties: anisotropy, interfaces, grain size and strain effects. The flexibility of the wet and supercritical chemistry routes associated with the versatility of SPS allowed designing new ferroelectric composite ceramics at different scales. These approaches are illustrated through various examples based on our work on ferroelectric/dielectric composites.

Spin wave spectrum and zero spin fluctuation of antiferromagnetic solid 3He

International Nuclear Information System (INIS)

Roger, M.; Delrieu, J.M.

1981-08-01

The spin wave spectrum and eigenvectors of the uudd antiferromagnetic phase of solid 3 He are calculated; an optical mode is predicted around 150 - 180 Mc and a zero point spin deviation of 0.74 is obtained in agreement with the antiferromagnetic resonance frequency measured by Osheroff

Structural phase transition and magnetic properties of Er-doped BiFeO3 nanoparticles

International Nuclear Information System (INIS)

Li, Y T; Zhang, H G; Dong, X G; Li, Q; Mao, W W; Dong, C L; Ren, S L; Li, X A; Wei, S Q

2013-01-01

The structural phase transition and local structural distortion of Er-doped BiFeO 3 nanoparticles have been discussed in order to understand the variation of magnetic properties in this system. The X-ray diffraction patterns and X-ray absorption fine structure of these samples demonstrate that there is structural phase transition and no obvious local structural distortion with the increasing of doping concentration. Unfortunately, no ferromagnetic properties have been observed even at a lower temperature. And the X-ray absorption spectra of Fe 2p core level of these samples are totally same, especially the energy positions do not shift which means the consistent valence states of Fe ions.

Two-magnon Raman scattering in a spin density wave antiferromagnet

OpenAIRE

Schoenfeld, Friedhelm; Kampf, Arno P.; Mueller-Hartmann, Erwin

1996-01-01

We present the results for a model calculation of resonant two-magnon Raman scattering in a spin density wave (SDW) antiferromagnet. The resonant enhancement of the two-magnon intensity is obtained from a microscopic analysis of the photon-magnon coupling vertex. By combining magnon-magnon interactions with `triple resonance` phenomena in the vertex function the resulting intensity line shape is found to closely resemble the measured two-magnon Raman signal in antiferromagnetic cuprates. Both...

The application of nonlinear dynamics in the study of ferroelectric materials

International Nuclear Information System (INIS)

Blochwitz, S.; Habel, R.; Diestelhorst, M.; Beige, H.

1996-01-01

It is well known that the structural phase transitions in ferroelectric materials are connected with strong nonlinear properties. So we can expect all features of nonlinear dynamical systems such as period-doubling cascades and chaos in a dynamical system that contains ferroelectric materials. Therefore we can apply nonlinear dynamics to these ferroelectric materials and we are doing it in two directions: (i) We study the structural phase transitions by analyzing the large signal behaviour with means of nonlinear dynamics. (ii) We control the chaotic behaviour of the system with the method proposed by Ott, Grebogi and Yorke. (authors)

Modelling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects

International Nuclear Information System (INIS)

Morozovska, Anna N; Eliseev, Eugene A

2004-01-01

We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. We have modified the Landau-Ginsburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic values and the various hysteresis-loop deformations (constricted and double loops) have been obtained in the framework of our model. The obtained results quantitatively explain the ferroelectric switching in such ferroelectric materials as thick PZT films

Spin-driven ferroelectricity and magneto-electric effects in frustrated magnetic systems

International Nuclear Information System (INIS)

Arima, Taka-hisa

2011-01-01

The interplay between magnetism and electricity in matter has become a central issue of condensed-matter physics. This review focuses on the ferroelectricity induced by magnetic order mostly in frustrated magnets, which is nowadays referred to as magneto-electric (ME) multiferroic, or often only as multiferroic. Some distinct types of microscopic origins relevant to the spin-driven ferroelectricity are discussed in detail. Then one sees that the frustration-based spin-driven ferroelectrics can exhibit nonlinear and giant ME responses of phase-transition type and of domain-control type, in contrast to the conventional magnetoelectrics hosting linear ME effects. (author)

Voltage tunability of thermal conductivity in ferroelectric materials

Science.gov (United States)

Ihlefeld, Jon; Hopkins, Patrick Edward

2016-02-09

A method to control thermal energy transport uses mobile coherent interfaces in nanoscale ferroelectric films to scatter phonons. The thermal conductivity can be actively tuned, simply by applying an electrical potential across the ferroelectric material and thereby altering the density of these coherent boundaries to directly impact thermal transport at room temperature and above. The invention eliminates the necessity of using moving components or poor efficiency methods to control heat transfer, enabling a means of thermal energy control at the micro- and nano-scales.

Antiferromagnetism in EuPdGe{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Albedah, Mohammed A. [Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Al-Qadi, Khalid [Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Department of Mathematics, Statistics and Physics, Qatar University, P.O. Box 2713, Doha (Qatar); Stadnik, Zbigniew M., E-mail: stadnik@uottawa.ca [Department of Physics, University of Ottawa, Ottawa, Ontario K1N 6N5 (Canada); Przewoźnik, Janusz [Solid State Physics Department, Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, 30-059 Kraków (Poland)

2014-11-15

Highlights: • We show that EuPdGe{sub 3} crystallizes in the BaNiSn{sub 3}-type structure with the lattice constants a = 4.4457(1) Å and c = 10.1703(2). • We demonstrate that EuPdGe{sub 3} is an antiferromagnet with the Néel temperature T{sub N} = 12.16(1) K. • The temperature dependence of the hyperfine magnetic field follows a S = 7/2 Brillouin function. • We find that the Debye temperature of the studied compound is 199(2) K. - Abstract: The results of X-ray diffraction, magnetic susceptibility and magnetization, and {sup 151}Eu Mössbauer spectroscopy measurements of polycrystalline EuPdGe{sub 3} are reported. EuPdGe{sub 3} crystallizes in the BaNiSn{sub 3}-type tetragonal structure (space group I4mm) with the lattice constants a=4.4457(1)Å and c=10.1703(2)Å. The results are consistent with EuPdGe{sub 3} being an antiferromagnet with the Néel temperature T{sub N}=12.16(1)K and with the Eu spins S=7/2 in the ab plane. The temperature dependence of the magnetic susceptibility above T{sub N} follows the modified Curie-Weiss law with the effective magnetic moment of 7.82(1) μ{sub B} per Eu atom and the paramagnetic Curie temperature of -5.3(1)K indicative of dominant antiferromagnetic interactions. The M(H) isotherms for temperatures approaching T{sub N} from above are indicative of dynamical short-range antiferromagnetic ordering in the sample. The temperature dependence of the hyperfine magnetic field follows a S=7/2 Brillouin function. The principal component of the electric field gradient tensor is shown to increase with decreasing temperature and is well described by a T{sup 3/2} power-law relation. The Debye temperature of EuPdGe{sub 3} determined from the Mössbauer data is 199(2) K.

Graded ferroelectrics, transpacitors and transponents

CERN Document Server

Mantese, Joseph V

2005-01-01

The text details the experimental and theoretical aspects of newly emerging ferroelectric devices, and their extensions to other ferroic systems such as: ferromagnetics, ferroelastics, piezoelectrics, etc. The theory and experimental results pertaining to non-homogeneous active ferroic devices and structures are presented.

Spin Dynamics and Critical Fluctuations in a Two-Dimensional Random Antiferromagnet

DEFF Research Database (Denmark)

Als-Nielsen, Jens Aage; Birgeneau, R. J.; Guggenheim, H. J.

1975-01-01

A comprehensive elastic- and inelastic-neutron-scattering study of the binary mixed antiferromagnet Rb2Mn0.5Ni0.5F4 has been carried out. The pure materials, Rb2MnF4 and Rb2NiF4 are [2d] near-Heisenberg antiferromagnets of the K2NiF4 type. Elastic-scattering experiments demonstrate that the Mn...

Tunable ferroelectric polarization and its interplay with spin-orbit coupling in tin iodide perovskites

Science.gov (United States)

Stroppa, Alessandro; di Sante, Domenico; Barone, Paolo; Bokdam, Menno; Kresse, Georg; Franchini, Cesare; Whangbo, Myung-Hwan; Picozzi, Silvia

2014-12-01

Ferroelectricity is a potentially crucial issue in halide perovskites, breakthrough materials in photovoltaic research. Using density functional theory simulations and symmetry analysis, we show that the lead-free perovskite iodide (FA)SnI3, containing the planar formamidinium cation FA, (NH2CHNH2)+, is ferroelectric. In fact, the perpendicular arrangement of FA planes, leading to a ‘weak’ polarization, is energetically more stable than parallel arrangements of FA planes, being either antiferroelectric or ‘strong’ ferroelectric. Moreover, we show that the ‘weak’ and ‘strong’ ferroelectric states with the polar axis along different crystallographic directions are energetically competing. Therefore, at least at low temperatures, an electric field could stabilize different states with the polarization rotated by π/4, resulting in a highly tunable ferroelectricity appealing for multistate logic. Intriguingly, the relatively strong spin-orbit coupling in noncentrosymmetric (FA)SnI3 gives rise to a co-existence of Rashba and Dresselhaus effects and to a spin texture that can be induced, tuned and switched by an electric field controlling the ferroelectric state.

The electronic structure of antiferromagnetic chromium

DEFF Research Database (Denmark)

Skriver, Hans Lomholt

1981-01-01

The author has used the local spin density formalism to perform self-consistent calculations of the electronic structure of chromium in the non-magnetic and commensurate antiferromagnetic phases, as a function of the lattice parameter. A change of a few per cent in the atomic radius brings...

Percolation Magnetism in Ferroelectric Nanoparticles

Science.gov (United States)

Golovina, Iryna S.; Lemishko, Serhii V.; Morozovska, Anna N.

2017-06-01

Nanoparticles of potassium tantalate (KTaO3) and potassium niobate (KNbO3) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

Percolation Magnetism in Ferroelectric Nanoparticles.

Science.gov (United States)

Golovina, Iryna S; Lemishko, Serhii V; Morozovska, Anna N

2017-12-01

Nanoparticles of potassium tantalate (KTaO 3 ) and potassium niobate (KNbO 3 ) were synthesized by oxidation of metallic tantalum in molten potassium nitrate with the addition of potassium hydroxide. Magnetization curves obtained on these ferroelectric nanoparticles exhibit a weak ferromagnetism, while these compounds are nonmagnetic in a bulk. The experimental data are used as a start point for theoretical calculations. We consider a microscopic mechanism that leads to the emerging of a ferromagnetic ordering in ferroelectric nanoparticles. Our approach is based on the percolation of magnetic polarons assuming the dominant role of the oxygen vacancies. It describes the formation of surface magnetic polarons, in which an exchange interaction between electrons trapped in oxygen vacancies is mediated by magnetic impurity Fe 3+ ions. The dependences of percolation radius on concentration of the oxygen vacancies and magnetic defects are determined in the framework of percolation theory.

Antiferromagnetic transition in graphene functionalized with nitroaniline

Science.gov (United States)

Komlev, Anton A.; Makarova, Tatiana L.; Lahderanta, Erkki; Semenikhin, Petr Valeryevich; Veinger, Anatoly I.; Kochman, Igor V.; Magnani, Giacomo; Bertoni, Giovanni; Pontiroli, Daniele; Ricco, Mauro

2017-07-01

Magnetic properties of graphene nanostructures functionalized with aromatic radicals were investigated by electron spin resonance (ESR) and superconducting quantum interference device (SQUID) techniques. Three types of functionalized graphene samples were investigated (functionalization was performed by 4-bromoaniline, 4-nitroaniline, or 4-chloroaniline). According to SQUID measurements, in case of functionalization by nitroaniline, sharp change in temperature dependence of magnetic susceptibility was observed near 120 K. Such behavior was explained as antiferromagnetic ordering. The same but more extended effect was observed in ESR measurements below 160 K. In the ESR measurements, only one resonance line with g-factor equal to 2.003 was observed. Based on the temperature dependencies of spin concentration and resonance position and intensity, the effect was explained as antiferromagnetic ordering along the extended defects on the basal planes of the graphene.

Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Kumar, Ashok, E-mail: ashok553@nplindia.org; Shukla, A. K. [National Physical Laboratory (CSIR), Dr. K. S. Krishnan Road, New Delhi-110012 (India); Barrionuevo, D.; Ortega, N.; Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 (United States); Shannigrahi, Santiranjan [Institute of Materials Research and Engineering - IMRE, Agency for Science Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Scott, J. F. [Department of Chemistry and Department of Physics, University of St. Andrews, St. Andrews KY16 ST (United Kingdom)

2015-03-30

Self-poled ultra-thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn{sup 3+}/Mn{sup 4+} ion ratio in the LSMO with 7 nm polar capping.

Structural, magnetic and electrical properties of ferromagnetic/ferroelectric multilayers

International Nuclear Information System (INIS)

Sirena, M.; Kaul, E.; Guimpel, J.; Steren, L. B.; Pedreros, M. B.; Rodriguez, C. A.

2011-01-01

The La 0.75 Sr 0.25 MnO 3 (LSMO)/Ba 0.7 Sr 0.3 TiO 3 (BSTO) superlattices and bilayers, where LSMO is ferromagnetic and BSTO is ferroelectric, were grown by dc sputtering. X-ray diffraction indicates that the samples present a textured growth with the c axis perpendicular to the substrate. Magnetization measurements show a decrease of the sample's magnetization for decreasing ferromagnetic thickness. This effect could be related to the presence of biaxial strain and a magnetic dead layer in the samples. Conductive atomic force microscopy indicates that the samples present a total covering of the ferromagnetic layer for a ferroelectric thickness higher than four unit cells. Transport tunneling of the carriers seems to be the preferred conduction mechanism through the ferroelectric layer. These are promising results for the development of multiferroic tunnel junctions.

Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

Energy Technology Data Exchange (ETDEWEB)

Palto, S. P., E-mail: palto@online.ru; Draginda, Yu A [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

2010-11-15

The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

Critical Behaviour of Pure and Site-Random Two Dimensional Antiferromagnets

DEFF Research Database (Denmark)

Birgenau, R. J.; Als-Nielsen, Jens Aage; Shirane, G.

1977-01-01

Quasielastic neutron scattering studies of the static critical behavior in the two-dimensional antiferromagnets K2NiF4, K2MnF4, and Rb2Mn0.5Ni0.5F4 are reported. For T......Quasielastic neutron scattering studies of the static critical behavior in the two-dimensional antiferromagnets K2NiF4, K2MnF4, and Rb2Mn0.5Ni0.5F4 are reported. For T...

Domain switching of fatigued ferroelectric thin films

Science.gov (United States)

Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

2014-05-01

We investigate the domain wall speed of a ferroelectric PbZr0.48Ti0.52O3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

Domain switching of fatigued ferroelectric thin films

International Nuclear Information System (INIS)

Tak Lim, Yun; Yeog Son, Jong; Shin, Young-Han

2014-01-01

We investigate the domain wall speed of a ferroelectric PbZr 0.48 Ti 0.52 O 3 (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue

Quasi-one-dimensional Heisenberg antiferromagnetic model for an organic polymeric chain

International Nuclear Information System (INIS)

Wu, F; Wang, W Z

2006-01-01

Using the exact diagonalization technique, we study the properties of the ground state of a spin-1/2 antiferromagnetic Heisenberg model for a zigzag polymer chain with side radicals connected to the even sites. We consider the nearest-neighbour exchange J and the next-nearest-neighbour exchange αJ along the main chain, and J 1 between the even site on the main chain and the radical site. For small α the ground state is ferrimagnetic. For α>α c1 , the ground state is a spiral phase, which is characterized by a peak of the static structure factor S(q) locating at an incommensurate value q max . For α>α c2 , the ground state is antiferromagnetic. With increasing J 1 , α c1 decreases while α c2 has a maximum at about J 1 = 0.5. For very small J 1 and α = 0.5, the spin configuration on the main chain is a product of nearest-neighbour singlets. In the antiferromagnetic phase, if J 1 is large enough the even site and the radical site form a singlet with exchange-decoupling from the odd site while the odd sites approximately form an antiferromagnetic chain

Precessional switching of antiferromagnets by electric field induced Dzyaloshinskii-Moriya torque

Science.gov (United States)

Kim, T. H.; Grünberg, P.; Han, S. H.; Cho, B. K.

2018-05-01

Antiferromagnetic insulators (AFIs) have attracted much interest from many researchers as promising candidates for use in ultrafast, ultralow-dissipation spintronic devices. As a fast method of reversing magnetization, precessional switching is realized when antiferromagnetic Néel orders l =(s1+s2 )/2 surmount the magnetic anisotropy or potential barrier in a given magnetic system, which is described well by the antiferromagnetic plane pendulum (APP) model. Here, we report that, as an alternative switching scenario, the direct coupling of an electric field with Dzyaloshinskii-Moriya (DM) interaction, which stems from spin-orbit coupling, is exploited for optimal switching. We derive the pendulum equation of motion of antiferromagnets, where DM torque is induced by a pulsed electric field. The temporal DM interaction is found to not only be in the form of magnetic torques (e.g., spin-orbit torque or magnetic field) but also modifies the magnetic potential that limits l 's activity; as a result, appropriate controls (e.g., direction, magnitude, and pulse shape) of the induced DM vector realize deterministic reversal in APP. The results present an approach for the control of a magnetic storage device by means of an electric field.

Acoustic emission mechanism at switching of ferroelectric crystals

International Nuclear Information System (INIS)

Belov, V.V.; Morozova, G.P.; Serdobol'skaya, O.Yu.

1986-01-01

Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO

Acoustic emission mechanism at switching of ferroelectric crystals

Energy Technology Data Exchange (ETDEWEB)

Belov, V V; Morozova, G P; Serdobol' skaya, O Yu

1986-01-01

Process of acoustic emission (AE) in lead germanate (PGO) representing pure ferroelectric, and gadolinium molybdate (GMO) representing ferroelectric-ferroelastic, for which switching may be conducted both by the field and pressure, were studied. A conclusion has been drawn that piezoelectric excitation of a crystal from the surface by pulses of overpolarization current in the process of domain coalescence is the main AE source in PGO. Not only piezoresponse, but also direct sound generation in the moment of domain penetration and collapse is considered as AE mechanism in GMO.

Ferroelectric tunnel junctions with multi-quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)

2014-06-02

Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

Morphology-dependent photo-induced polarization recovery in ferroelectric thin films

Science.gov (United States)

Wang, J. Y.; Liu, G.; Sando, D.; Nagarajan, V.; Seidel, J.

2017-08-01

We investigate photo-induced ferroelectric domain switching in a series of Pb(Zr0.2Ti0.8)O3/La0.7Sr0.3MnO3 (PZT/LSMO) bilayer thin films with varying surface morphologies by piezoresponse force microscopy under light illumination. We demonstrate that reverse poled ferroelectric regions can be almost fully recovered under laser irradiation of the PZT layer and that the recovery process is dependent on the surface morphology on the nanometer scale. The recovery process is well described by the Kolmogorov-Avrami-Ishibashi model, and the evolution speed is controlled by light intensity, sample thickness, and initial write voltage. Our findings shed light on optical control of the domain structure in ferroelectric thin films with different surface morphologies.

A study of radiation vulnerability of ferroelectric material and devices

International Nuclear Information System (INIS)

Coiec, Y.M.; Musseau, O.; Leray, J.L.

1994-01-01

The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad(Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' x-rays and 60 Co gamma rays

Antiferromagnetic exchange coupling measurements on single Co clusters

Science.gov (United States)

Wernsdorfer, W.; Leroy, D.; Portemont, C.; Brenac, A.; Morel, R.; Notin, L.; Mailly, D.

2009-03-01

We report on single-cluster measurements of the angular dependence of the low-temperature ferromagnetic core magnetization switching field in exchange-coupled Co/CoO core-shell clusters (4 nm) using a micro-bridge DC superconducting quantum interference device (μ-SQUID). It is observed that the coupling with the antiferromagnetic shell induces modification in the switching field for clusters with intrinsic uniaxial anisotropy depending on the direction of the magnetic field applied during the cooling. Using a modified Stoner-Wohlfarth model, it is shown that the core interacts with two weakly coupled and asymmetrical antiferromagnetic sublattices. Ref.: C. Portemont, R. Morel, W. Wernsdorfer, D. Mailly, A. Brenac, and L. Notin, Phys. Rev. B 78, 144415 (2008)

Synthesis, characterization, properties, and applications of nanosized ferroelectric, ferromagnetic, or multiferroic materials

International Nuclear Information System (INIS)

Dhak, Debasis; Das, Soma; Communication Engineering.); Dhak, Prasanta

2015-01-01

Recently, there has been an enormous increase in research activity in the field of ferroelectrics and ferromagnetics especially in multiferroic materials which possess both ferroelectric and ferromagnetic properties simultaneously. However, the ferroelectric, ferromagnetic, and multiferroic properties should be further improved from the utilitarian and commercial viewpoints. Nanostructural materials are central to the evolution of future electronics and information technologies. Ferroelectrics and ferromagnetics have already been established as a dominant branch in electronics sector because of their diverse applications. The ongoing dimensional downscaling of materials to allow packing of increased numbers of components into integrated circuits provides the momentum for evolution of nanostructural devices. Nanoscaling of the above materials can result in a modification of their functionality. Furthermore, nanoscaling can be used to form high density arrays of nanodomain nanostructures, which is desirable for miniaturization of devices

Effect of Yb substitution on room temperature magnetic and dielectric properties of bismuth ferrite nanoparticles

Science.gov (United States)

Remya, K. P.; Amirthapandian, S.; Manivel Raja, M.; Viswanathan, C.; Ponpandian, N.

2016-10-01

Effect of the Yb dopant on the structural, magnetic, and electrical properties of the multiferroic BiFeO3 have been studied. The structural properties of sol-gel derived Bi1-xYbxFeO3 (x = 0.0, 0.1, and 0.2) nanoparticles reveal the formation of a rhombohedrally distorted perovskite in XRD and a reduction in the average grain size have been observed with an increase in the Yb concentration. Microstructural studies exhibited the formation of sphere like morphology with decreasing particle size with increase in the dopant concentration. The effective doping also resulted in larger magnetization as well as coercivity with the maximum of 257 Oe and 1.76 emu/g in the Bi0.8Yb0.2FeO3 nanoparticles. Ferroelectric as well as dielectric properties of the nanoparticles were also improved on doping. The best results were obtained for the BiFeO3 nanoparticles having Yb concentration x = 0.2.

Critical properties of a ferroelectric superlattice described by a transverse spin-1/2 Ising model

International Nuclear Information System (INIS)

Tabyaoui, A; Saber, M; Baerner, K; Ainane, A

2007-01-01

The phase transition properties of a ferroelectric superlattice with two alternating layers A and B described by a transverse spin-1/2 Ising model have been investigated using the effective field theory within a probability distribution technique that accounts for the self spin correlation functions. The Curie temperature T c , polarization and susceptibility have been obtained. The effects of the transverse field and the ferroelectric and antiferroelectric interfacial coupling strength between two ferroelectric materials are discussed. They relate to the physical properties of antiferroelectric/ferroelectric superlattices

Frontiers of ferroelectricity a special issue of the journal of materials science

CERN Document Server

Lang, Sidney B

2007-01-01

The book presents theory, fundamentals and some applications of ferroelectricy. The 24 chapters comprise reviews and research reports covering the spectrum of ferroelectricity. It is intended to describe the current levels of understanding of various aspects of ferroelectricity as presented by authorities in the field. Topics include relaxors, piezoelectrics, microscale and nanoscale studies, polymers and composites, unusual properties, and techniques and devices. The information in this book is intended for physicists, engineers and materials scientists working with ferroelectric materials including ceramics, single crystals, polymers, composites and even some biological materials.

Mn2Au: Body-centered-tetragonal bimetallic antiferromagnets grown by molecular beam epitataxy

Czech Academy of Sciences Publication Activity Database

Wu, H.C.; Liao, Z.M.; Sofin, R.G.S.; Feng, G.; Ma, X.M.; Shick, Alexander; Mryasov, O. N.; Shvets, I.V.

2012-01-01

Roč. 24, č. 47 (2012), s. 6374-6379 ISSN 0935-9648 Institutional research plan: CEZ:AV0Z10100520 Keywords : antiferromagnets * antiferromagnetic spintronics * exchange bias * molecular beam epitaxy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 14.829, year: 2012

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

Science.gov (United States)

Tian, Bo Bo; Liu, Yang; Chen, Liu Fang; Wang, Jian Lu; Sun, Shuo; Shen, Hong; Sun, Jing Lan; Yuan, Guo Liang; Fusil, Stéphane; Garcia, Vincent; Dkhil, Brahim; Meng, Xiang Jian; Chu, Jun Hao

2015-12-01

Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.

Total-dose radiation-induced degradation of thin film ferroelectric capacitors

International Nuclear Information System (INIS)

Schwank, J.R.; Nasby, R.D.; Miller, S.L.; Rodgers, M.S.; Dressendorfer, P.V.

1990-01-01

Thin film PbZr y Ti 1-y O 3 (PZT) ferroelectric memories offer the potential for radiation-hardened, high-speed nonvolatile memories with good retention and fatigue properties. In this paper we explore in detail the radiation hardness of PZT ferroelectric capacitors. Ferroelectric capacitors were irradiated using x-ray and Co-60 sources to dose levels up to 16 Mrad(Si). The capacitors were characterized for their memory properties both before and after irradiation. The radiation hardness was process dependent. Three out of four processes resulted in capacitors that showed less than 30% radiation-induced degradation in retained polarization charge and remanent polarization after irradiating to 16 Mrad(Si). On the other hand, one of the processes showed significant radiation-induced degradation in retained polarization charge and remanent polarization at dose levels above 1 Mrad(Si). The decrease in retained polarization charge appears to be due to an alteration of the switching characteristics of the ferroelectric due to changes in the internal fields. The radiation-induced degradation is recoverable by a postirradiation biased anneal and can be prevented entirely if devices are cycled during irradiation. The authors have developed a model to simulate the observed degradation

Operation of Ferroelectric Plasma Sources in a Gas Discharge Mode

International Nuclear Information System (INIS)

Dunaevsky, A.; Fisch, N.J.

2004-01-01

Ferroelectric plasma sources in vacuum are known as sources of ablative plasma, formed due to surface discharge. In this paper, observations of a gas discharge mode of operation of the ferroelectric plasma sources (FPS) are reported. The gas discharge appears at pressures between approximately 20 and approximately 80 Torr. At pressures of 1-20 Torr, there is a transition from vacuum surface discharge to the gas discharge, when both modes coexist and the surface discharges sustain the gas discharge. At pressures between 20 and 80 Torr, the surface discharges are suppressed, and FPS operate in pure gas discharge mode, with the formation of almost uniform plasma along the entire surface of the ceramics between strips. The density of the expanding plasma is estimated to be about 1013 cm-3 at a distance of 5.5 mm from the surface. The power consumption of the discharge is comparatively low, making it useful for various applications. This paper also presents direct measurements of the yield of secondary electron emission from ferroelectric ceramics, which, at low energies of primary electrons, is high and dependent on the polarization of the ferroelectric material

Isostructural magnetic phase transition and magnetocaloric effect in Ising antiferromagnet

International Nuclear Information System (INIS)

Lavanov, G.Yu; Kalita, V.M.; Loktev, V.M.

2014-01-01

It is shown that the external magnetic field induced isostructural I st order magnetic phase transition between antiferromagnetic phases with different antiferromagnetic vector values is associated with entropy. It is found, that depending on temperature the entropy jump and the related heat release change their sign at this transition point. In the low-temperature region of metamagnetic I st order phase tensition the entropy jump is positive, and in the triple point region this jump for isostructural magnetic transition is negative

Organic ferroelectric opto-electronic memories

NARCIS (Netherlands)

Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

2011-01-01

Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

Theory of antiferromagnetic pairing in cuprate superconductors

International Nuclear Information System (INIS)

Plakida, N.M.

2006-01-01

A review of the antiferromagnetic exchange and spin-fluctuation pairing theory in the cuprate superconductors is given. We briefly discuss a phenomenological approach and a theory in the limit of weak Coulomb correlations. A microscopic theory in the strong correlation limit is presented in more detail. In particular, results of our recently developed theory for the effective p-d Hubbard model and the reduced t-J model are given. We have proved that retardation effects for the antiferromagnetic exchange interaction are unimportant that results in pairing of all charge carriers in the conduction band and high Tc proportional to the Fermi energy. The spin-fluctuation interaction caused by kinematic interaction gives an additional contribution to the d-wave pairing. Dependence of Tc on the hole concentration and the lattice constant (or pressure) and an oxygen isotope shift are discussed

Origin of ferroelectricity and exotic magnetism in frustrated LiCuVO4

Science.gov (United States)

Mourigal, Martin

2013-03-01

The spin-1/2 Heisenberg chain with competing ferromagnetic nearest-neighbor (J1) and antiferromagnetic next-nearest neighbor (J2) interactions is probably one the simplest, yet richest model in frustrated magnetism. It is experimentally realized in a diversity of Mott insulators, in particular in copper-oxide materials built-up from edge-sharing CuO6 octahedra. The quasi-1D compound LiCuVO4 stands out for the diverse emergent magnetic and multiferroic phenomena it displays, its simple crystal structure and its availability as high-quality single crystals. I will review recent elastic neutron scattering works on LiCuVO4 which elucidate the nature of its ground-state as a function of applied electric field and magnetic field up to 14 T. Below 3.5 T, a model long-range ordered ferroelectric spin-cycloid is unveiled, its chirality fully controlled by an applied electric field, and the corresponding magnetoelectric coupling in excellent agreement with the predictions of a purely electronic mechanism based on spin currents. Above 8 T, a transition to a new quantum state is observed. This new phase resembles the longitudinal density-wave of magnon-pairs (p=2 SDW) predicted in the purely 1D case but is characterized by the intriguing absence of long-ranged dipolar correlations. Work performed at the Institut Laue-Langevin in Grenoble and in collaboration with M. Enderle, B. Fåk, R. K. Kremer and J. Law.

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

Science.gov (United States)

Lu, Haidong; Wang, Bo; Li, Tao; Lipatov, Alexey; Lee, Hyungwoo; Rajapitamahuni, Anil; Xu, Ruijuan; Hong, Xia; Farokhipoor, Saeedeh; Martin, Lane W; Eom, Chang-Beom; Chen, Long-Qing; Sinitskii, Alexander; Gruverman, Alexei

2016-10-12

Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.

Electric field cycling behavior of ferroelectric hafnium oxide.

Science.gov (United States)

Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

2014-11-26

HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

Antiferromagnetism and its origin in iron-based superconductors (Review Article)

International Nuclear Information System (INIS)

Ding, Ming-Cui; Zhang, Yu-Zhong; Lin, Hai-Qing

2014-01-01

In iron-based superconductors, unravelling the origin of the antiferromagnetism is a crucial step towards understanding the high-T c superconductivity as it is widely believed that the magnetic fluctuations play important roles in the formation of the Cooper pairs. Therefore, in this paper, we will briefly review experimental results related to the antiferromagnetic state in iron-based superconductors and focus on a review of the theoretical investigations which show applicability of the itinerant scenario to the observed antiferromagnetism and corresponding phase transitions in various families of the iron-based superconductors. A proposal of coupling between frustrated and un frustrated bands for understanding the reduced magnetic moment typically observed in iron pnictides is also reviewed. While all the above theoretical investigations do not rule out a possible existence of localized electrons in iron-based superconductors, these results strongly indicate a close relation between itinerant electrons and the magnetically ordered state and point out the importance of taking into account the orbital degrees of freedom.

Improper ferroelectric polarization in a perovskite driven by intersite charge transfer and ordering

Science.gov (United States)

Chen, Wei-Tin; Wang, Chin-Wei; Wu, Hung-Cheng; Chou, Fang-Cheng; Yang, Hung-Duen; Simonov, Arkadiy; Senn, M. S.

2018-04-01

It is of great interest to design and make materials in which ferroelectric polarization is coupled to other order parameters such as lattice, magnetic, and electronic instabilities. Such materials will be invaluable in next-generation data storage devices. Recently, remarkable progress has been made in understanding improper ferroelectric coupling mechanisms that arise from lattice and magnetic instabilities. However, although theoretically predicted, a compact lattice coupling between electronic and ferroelectric (polar) instabilities has yet to be realized. Here we report detailed crystallographic studies of a perovskite HgAMn3A'Mn4BO12 that is found to exhibit a polar ground state on account of such couplings that arise from charge and orbital ordering on both the A'- and B-sites, which are themselves driven by a highly unusual MnA '-MnB intersite charge transfer. The inherent coupling of polar, charge, orbital, and hence magnetic degrees of freedom make this a system of great fundamental interest, and demonstrating ferroelectric switching in this and a host of recently reported hybrid improper ferroelectrics remains a substantial challenge.

Electrostrain in excess of 1% in polycrystalline piezoelectrics

Science.gov (United States)

Narayan, Bastola; Malhotra, Jaskaran Singh; Pandey, Rishikesh; Yaddanapudi, Krishna; Nukala, Pavan; Dkhil, Brahim; Senyshyn, Anatoliy; Ranjan, Rajeev

2018-05-01

Piezoelectric actuators transform electrical energy into mechanical energy, and because of their compactness, quick response time and accurate displacement, they are sought after in many applications. Polycrystalline piezoelectric ceramics are technologically more appealing than single crystals due to their simpler and less expensive processing, but have yet to display electrostrain values that exceed 1%. Here we report a material design strategy wherein the efficient switching of ferroelectric-ferroelastic domains by an electric field is exploited to achieve a high electrostrain value of 1.3% in a pseudo-ternary ferroelectric alloy system, BiFeO3-PbTiO3-LaFeO3. Detailed structural investigations reveal that this electrostrain is associated with a combination of several factors: a large spontaneous lattice strain of the piezoelectric phase, domain miniaturization, a low-symmetry ferroelectric phase and a very large reverse switching of the non-180° domains. This insight for the design of a new class of polycrystalline piezoceramics with high electrostrains may be useful to develop alternatives to costly single-crystal actuators.

Fracture mechanics of piezoelectric and ferroelectric solids

CERN Document Server

Fang, Daining

2013-01-01

Fracture Mechanics of Piezoelectric and Ferroelectric Solids presents a systematic and comprehensive coverage of the fracture mechanics of piezoelectric/ferroelectric materials, which includes the theoretical analysis, numerical computations and experimental observations. The main emphasis is placed on the mechanics description of various crack problems such static, dynamic and interface fractures as well as the physical explanations for the mechanism of electrically induced fracture. The book is intended for postgraduate students, researchers and engineers in the fields of solid mechanics, applied physics, material science and mechanical engineering. Dr. Daining Fang is a professor at the School of Aerospace, Tsinghua University, China; Dr. Jinxi Liu is a professor at the Department of Engineering Mechanics, Shijiazhuang Railway Institute, China.

A study of radiation vulnerability of ferroelectric material and devices

Energy Technology Data Exchange (ETDEWEB)

Coic, Y M; Musseau, O; Leray, J L [CEA Centre d` Etudes de Bruyeres-le-Chatel, 91 (France)

1994-12-31

The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ``10 keV Aracor`` s-rays and {sup 60}Co gamma rays. (author). 24 refs., 11 figs., 7 tabs.

A study of radiation vulnerability of ferroelectric material and devices

International Nuclear Information System (INIS)

Coic, Y.M.; Musseau, O.; Leray, J.L.

1994-01-01

The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' s-rays and 60 Co gamma rays. (author). 24 refs., 11 figs., 7 tabs

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers

International Nuclear Information System (INIS)

Stolichnov, I; Riester, S W E; Mikheev, E; Setter, N; Rushforth, A W; Edmonds, K W; Campion, R P; Foxon, C T; Gallagher, B L; Jungwirth, T; Trodahl, H J

2011-01-01

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor. (topical review)

Liquid crystals with novel terminal chains as ferroelectric liquid crystal hosts

International Nuclear Information System (INIS)

Cosquer, G.Y.

2000-02-01

Changes to the molecular structure of liquid crystals can have a significant effect upon their mesomorphism and ferroelectric properties. Most of the research in liquid crystal for display applications concentrates on the design and synthesis of novel mesogenic cores to which straight terminal alkyl or alkoxy chains are attached. However, little is known about the effects upon the mesomorphism and ferroelectric properties of varying the terminal chains. The compounds prepared in this work have a common core - a 2,3-difluoroterphenyl unit with a nine-atom alkyl (nonyl) or alkoxy (octyloxy) chain at the 4-position, but with an unusual chain at the 4''-position. In some cases the terminal chain contains hetero atoms such as silicon, oxygen, chlorine and bromine or has a bulky end group. In total 46 final materials were synthesised in an attempt to understand the effect of an unusual terminal chains on mesomorphism and for some of these compounds the effect upon the switching times when added to a standard ferroelectric mixture were investigated. It was found that most compounds containing a bulky end group only displayed a smectic C phase, compounds with a halogen substituent as an end unit displayed a smectic A phase and that increasing the chain flexibility by introducing an oxygen atom in the chain reduces the melting and clearing points. The electro-optical measurements carried out on ferroelectric mixtures containing a bulky end group compound showed that shorter switching times were produced than for the ferroelectric mixture containing a straight chain compound. It is suggested that a bulky end group diminishes te extent of interlayer mixing in the chiral smectic C phase and therefore the molecules move more easily with ferroelectric switching. (author)

Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode

NARCIS (Netherlands)

Lee, J.; Breemen, A.J.J.M. van; Khikhlovskyi, V.; Kemerink, M.; Janssen, R.A.J.; Gelinck, G.H.

2016-01-01

We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism

Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

Science.gov (United States)

Lee, Jung-Kun; Nastasi, Michael

2012-11-01

The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.

A Review of Domain Modelling and Domain Imaging Techniques in Ferroelectric Crystals

Directory of Open Access Journals (Sweden)

John E. Huber

2011-02-01

Full Text Available The present paper reviews models of domain structure in ferroelectric crystals, thin films and bulk materials. Common crystal structures in ferroelectric materials are described and the theory of compatible domain patterns is introduced. Applications to multi-rank laminates are presented. Alternative models employing phase-field and related techniques are reviewed. The paper then presents methods of observing ferroelectric domain structure, including optical, polarized light, scanning electron microscopy, X-ray and neutron diffraction, atomic force microscopy and piezo-force microscopy. Use of more than one technique for unambiguous identification of the domain structure is also described.

Ferroelectricity with Ferromagnetic Moment in Orthoferrites

Science.gov (United States)

Tokunaga, Yusuke

2010-03-01

Exotic multiferroics with gigantic magnetoelectric (ME) coupling have recently been attracting broad interests from the viewpoints of both fundamental physics and possible technological application to next-generation spintronic devices. To attain a strong ME coupling, it would be preferable that the ferroelectric order is induced by the magnetic order. Nevertheless, the magnetically induced ferroelectric state with the spontaneous ferromagnetic moment is still quite rare apart from a few conical-spin multiferroics. To further explore multiferroic materials with both the strong ME coupling and spontaneous magnetization, we focused on materials with magnetic structures other than conical structure. In this talk we present that the most orthodox perovskite ferrite systems DyFeO3 and GdFeO3 have ``ferromagnetic-ferroelectric,'' i.e., genuinely multiferroic states in which weak ferromagnetic moment is induced by Dzyaloshinskii-Moriya interaction working on Fe spins and electric polarization originates from the striction due to symmetric exchange interaction between Fe and Dy (Gd) spins [1] [2]. Both materials showed large electric polarization (>0.1 μC/cm^2) and strong ME coupling. In addition, we succeeded in mutual control of magnetization and polarization with electric- and magnetic-fields in GdFeO3, and attributed the controllability to novel, composite domain wall structure. [4pt] [1] Y. Tokunaga et al., Phys. Rev. Lett. 101, 097205 (2008). [0pt] [2] Y. Tokunaga et al., Nature Mater. 8, 558 (2009).

Ferroelectric Polarization in Nanocrystalline Hydroxyapatite Thin Films on Silicon

Science.gov (United States)

Lang, S. B.; Tofail, S. A. M.; Kholkin, A. L.; Wojtaś, M.; Gregor, M.; Gandhi, A. A.; Wang, Y.; Bauer, S.; Krause, M.; Plecenik, A.

2013-01-01

Hydroxyapatite nanocrystals in natural form are a major component of bone- a known piezoelectric material. Synthetic hydroxyapatite is widely used in bone grafts and prosthetic pyroelectric coatings as it binds strongly with natural bone. Nanocrystalline synthetic hydroxyapatite films have recently been found to exhibit strong piezoelectricity and pyroelectricity. While a spontaneous polarization in hydroxyapatite has been predicted since 2005, the reversibility of this polarization (i.e. ferroelectricity) requires experimental evidence. Here we use piezoresponse force microscopy to demonstrate that nanocrystalline hydroxyapatite indeed exhibits ferroelectricity: a reversal of polarization under an electrical field. This finding will strengthen investigations on the role of electrical polarization in biomineralization and bone-density related diseases. As hydroxyapatite is one of the most common biocompatible materials, our findings will also stimulate systematic exploration of lead and rare-metal free ferroelectric devices for potential applications in areas as diverse as in vivo and ex vivo energy harvesting, biosensing and electronics. PMID:23884324

Room temperature ferroelectricity in continuous croconic acid thin films

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xuanyuan; Lu, Haidong; Yin, Yuewei; Ahmadi, Zahra; Costa, Paulo S. [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Zhang, Xiaozhe [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Department of Physics, Xi' an Jiaotong University, Xi' an 710049 (China); Wang, Xiao; Yu, Le; Cheng, Xuemei [Department of Physics, Bryn Mawr College, Bryn Mawr, Pennsylvania 19010 (United States); DiChiara, Anthony D. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Gruverman, Alexei, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Enders, Axel, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu; Xu, Xiaoshan, E-mail: alexei-gruverman@unl.edu, E-mail: a.enders@me.com, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)

2016-09-05

Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of the nanoscale domain structure by piezoresponse force microscopy. The fabrication of continuous thin films of the hydrogen-bonded croconic acid was achieved by the suppression of the thermal decomposition using low evaporation temperatures in high vacuum, combined with growth conditions far from thermal equilibrium. For nominal coverages ≥20 nm, quasi 2D and polycrystalline films, with an average grain size of 50–100 nm and 3.5 nm roughness, can be obtained. Spontaneous ferroelectric domain structures of the thin films have been observed and appear to correlate with the grain patterns. The application of this solvent-free growth protocol may be a key to the development of flexible organic ferroelectric thin films for electronic applications.

Ferroelectricity the fundamentals collection

CERN Document Server

Jimenez, Basilio

2008-01-01

This indispensable collection of seminal papers on ferroelectricity provides an overview over almost a hundred years of basic and applied research. Containing historic contributions from renowned authors, this book presents developments in an area of science that is still rapidly growing. Although primarily aimed at scientists and academics involved in research, this will also be of use to students as well as newcomers to the field.

Light-Activated Gigahertz Ferroelectric Domain Dynamics

Science.gov (United States)

Akamatsu, Hirofumi; Yuan, Yakun; Stoica, Vladimir A.; Stone, Greg; Yang, Tiannan; Hong, Zijian; Lei, Shiming; Zhu, Yi; Haislmaier, Ryan C.; Freeland, John W.; Chen, Long-Qing; Wen, Haidan; Gopalan, Venkatraman

2018-03-01

Using time- and spatially resolved hard x-ray diffraction microscopy, the striking structural and electrical dynamics upon optical excitation of a single crystal of BaTiO3 are simultaneously captured on subnanoseconds and nanoscale within individual ferroelectric domains and across walls. A large emergent photoinduced electric field of up to 20 ×106 V /m is discovered in a surface layer of the crystal, which then drives polarization and lattice dynamics that are dramatically distinct in a surface layer versus bulk regions. A dynamical phase-field modeling method is developed that reveals the microscopic origin of these dynamics, leading to gigahertz polarization and elastic waves traveling in the crystal with sonic speeds and spatially varying frequencies. The advances in spatiotemporal imaging and dynamical modeling tools open up opportunities for disentangling ultrafast processes in complex mesoscale structures such as ferroelectric domains.

Thermoinduced magnetization in nanoparticles of antiferromagnetic materials

DEFF Research Database (Denmark)

Mørup, Steen; Frandsen, Cathrine

2004-01-01

We show that there is a thermoinduced contribution to the magnetic moment of nanoparticles of antiferromagnetic materials. It arises from thermal excitations of the uniform spin-precession mode, and it has the unusual property that its magnitude increases with increasing temperature. This has...

Dirac Fermions in an Antiferromagnetic Semimetal

Science.gov (United States)

Tang, Peizhe; Zhou, Quan; Xu, Gang; Zhang, Shou-Cheng; Shou-Cheng Zhang's Group Team, Prof.

Analogues of the elementary particles have been extensively searched for in condensed matter systems for both scientific interest and technological applications. Recently, massless Dirac fermions were found to emerge as low energy excitations in materials now known as Dirac semimetals. All the currently known Dirac semimetals are nonmagnetic with both time-reversal symmetry  and inversion symmetry "". Here we show that Dirac fermions can exist in one type of antiferromagnetic systems, where both  and "" are broken but their combination "" is respected. We propose orthorhombic antiferromagnet CuMnAs as a candidate, analyze the robustness of the Dirac points under symmetry protections, and demonstrate its distinctive bulk dispersions as well as the corresponding surface states by ab initio calculations. Our results provide a possible platform to study the interplay of Dirac fermion physics and magnetism. We acknowledge the DOE, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SF00515, NSF under Grant No.DMR-1305677 and FAME, one of six centers of STARnet.

Spin-orbit torque in two-dimensional antiferromagnetic topological insulators

KAUST Repository

Ghosh, Sumit; Manchon, Aurelien

2017-01-01

We investigate spin transport in two-dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In the presence of an in-plane magnetization AFTI supports zero energy modes, which enables topologically protected edge conduction at low energy. We address the nature of current-driven spin torque in these structures and study the impact of spin-independent disorder. Interestingly, upon strong disorder the spin torque develops an antidamping component (i.e., even upon magnetization reversal) along the edges, which could enable current-driven manipulation of the antiferromagnetic order parameter. This antidamping torque decreases when increasing the system size and when the system enters the trivial insulator regime.

Spin-orbit torque in two-dimensional antiferromagnetic topological insulators

KAUST Repository

Ghosh, Sumit

2017-01-24

We investigate spin transport in two-dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In the presence of an in-plane magnetization AFTI supports zero energy modes, which enables topologically protected edge conduction at low energy. We address the nature of current-driven spin torque in these structures and study the impact of spin-independent disorder. Interestingly, upon strong disorder the spin torque develops an antidamping component (i.e., even upon magnetization reversal) along the edges, which could enable current-driven manipulation of the antiferromagnetic order parameter. This antidamping torque decreases when increasing the system size and when the system enters the trivial insulator regime.

Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures.

Science.gov (United States)

Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

2016-03-08

Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

Simulation of fatigue damage in ferroelectric polycrystals under mechanical/electrical loading

Science.gov (United States)

Kozinov, S.; Kuna, M.

2018-07-01

The reliability of smart-structures made of ferroelectric ceramics is essentially reduced by the formation of cracks under the action of external electrical and/or mechanical loading. In the current research a numerical model for low-cycle fatigue in ferroelectric mesostructures is proposed. In the finite element simulations a combination of two user element routines is utilized. The first one is used to model a micromechanical ferroelectric domain switching behavior inside the grains. The second one is used to simulate fatigue damage of grain boundaries by a cohesive zone model (EMCCZM) based on an electromechanical cyclic traction-separation law (TSL). For numerical simulations a scanning electron microscope image of the ceramic's grain structure was digitalized and meshed. The response of this mesostructure to cyclic electrical or mechanical loading is systematically analyzed. As a result of the simulations, the distribution of electric potential, field, displacement and polarization as well as mechanical stresses and deformations inside the grains are obtained. At the grain boundaries, the formation and evolution of damage are analyzed until final failure and induced degradation of electric permittivity. It is found that the proposed model correctly mimics polycrystalline behavior during poling processes and progressive damage under cyclic electromechanical loading. To the authors' knowledge, it is the first model and numerical analysis of ferroelectric polycrystals taking into account both domain reorientation and cohesive modeling of intergranular fracture. It can help to understand failure mechanisms taking place in ferroelectrics during fatigue processes.

ZnFe{sub 2}O{sub 4} antiferromagnetic structure redetermination

Energy Technology Data Exchange (ETDEWEB)

Kremenović, Aleksandar, E-mail: akremenovic@rgf.bg.ac.rs [Laboratory for Crystallography, Faculty of Mining and Geology, University of Belgrade, Đušina 7, Belgrade 11000 (Serbia); Antić, Bratislav [Condensed Matter Physics Laboratory, Institute of Nuclear Sciences “Vinča”, University of Belgrade, P.O. Box 522, Belgrade 11001 (Serbia); Vulić, Predrag [Laboratory for Crystallography, Faculty of Mining and Geology, University of Belgrade, Đušina 7, Belgrade 11000 (Serbia); Blanuša, Jovan [Condensed Matter Physics Laboratory, Institute of Nuclear Sciences “Vinča”, University of Belgrade, P.O. Box 522, Belgrade 11001 (Serbia); Tomic, Aleksandra [Condensed Matter Physics Laboratory, Institute of Nuclear Sciences “Vinča”, University of Belgrade, P.O. Box 522, Belgrade 11001 (Serbia); Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, 10027 (United States)

2017-03-15

Magnetic structure of ZnFe{sub 2}O{sub 4} normal spinel is re-examined. Antiferromagnetic structure non-collinear model is established within C{sub a}2 space group having four different crystallographic/magnetic sites for 32 Fe{sup 3+} spins within magnetic unit cell. - Highlights: • Magnetic structure of ZnFe{sub 2}O{sub 4} normal spinel is re-examined. • Antiferromagnetic non-collinear structure model is established within C{sub a}2 space group. • Four different crystallographic/magnetic sites contain 32 Fe{sup 3+} spins within magnetic unit cell.

Organic ferroelectric memory devices with inkjet-printed polymer electrodes on flexible substrates

KAUST Repository

Bhansali, Unnat Sampatraj

2013-05-01

Drop-on-demand piezoelectric inkjet-printing technique has been used to fabricate a functional cross-bar array of all-organic ferroelectric memory devices. The polymer-ferroelectric-polymer device consists of a ferroelectric copolymer P(VDF-TrFE) film sandwiched between inkjet-patterned, continuous, orthogonal lines of PEDOT:PSS polymer as the bottom and top electrodes. These devices exhibit well-saturated hysteresis curves with a maximum remnant polarization (Pr) = 6.7 μC/cm2, coercive field (E c) = 55 MV/m and a peak capacitance density of 45 nF/cm2. Our polarization fatigue measurements show that these devices retain ∼100% and 45% of their initial Pr values after 103 and 10 5 stress cycles, respectively. The overall performance and polarization retention characteristics of these ferroelectric capacitors with inkjet-printed polymer electrodes are comparable to metal and spin-cast polymer electrodes suggesting their potential use in large-area flexible electronics. © 2013 Elsevier Ltd. All rights reserved.

Hysteresis loop behaviors of ferroelectric thin films:A Monte Carlo simulation study

Institute of Scientific and Technical Information of China (English)

C. M. Bedoya-Hincapi´e; H. H. Ortiz-´Alvarez; E. Restrepo-Parra; J. J. Olaya-Fl´orez; J. E. Alfonso

2015-01-01

The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole–dipole interaction in the transversal (x–y) direction, and the nearest dipole–dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.

Ferroelectric-antiferroelectric mixed systems. Equation of state, thermodynamic functions

Directory of Open Access Journals (Sweden)

N.A.Korynevskii

2006-01-01

Full Text Available The problem of equation of state for ferroelectric-antiferroelectric mixed systems in the whole region of a concentration change (0≤n≤1 is discussed. The main peculiarity of the presented model turns out to be the possibility for the site dipole momentum to be oriented ferroelectrically in z-direction and antiferroelectrically in x-direction. Such a situation takes place in mixed compounds of KDP type. The different phases (ferro-, antiferro-, paraelectric, dipole glass and some combinations of them have been found and analyzed.

Solution combustion synthesis and characterization of nanosized bismuth ferrite

Science.gov (United States)

Sai Kumar, V. Sesha; Rao, K. Venkateswara; Krishnaveni, T.; Kishore Goud, A. Shiva; Reddy, P. Ranjith

2012-06-01

The present paper describes a simple method of nanosized BiFeO3 by the solution combustion synthesis using bismuth and iron nitrates as oxidizers and the combination fuel of citric acid and ammonium hydroxide, with fuel to oxidizer ratio (Ψ = 1) one. The X-ray Diffraction results indicated rhombohedral phase (R3m) with JCPDS data card no: 72-2035. The ferroelectric transition of the sample at 8310C was detected by differential thermal analysis. Thermal analysis was done by Thermal gravimetric-Differential thermal analyzer and obtained results were presented in this paper.

The synthesis, structure and reactivity of iron-bismuth complexes : Potential Molecular Precursors for Multiferroic BiFeO3

OpenAIRE

Wójcik, Katarzyna

2009-01-01

The thesis presented here is focused on the synthesis of iron-bismuth alkoxides and siloxides as precursors for multiferroic BiFeO3 systems. Spectrum of novel cyclopentadienyl substituted iron-bismuth complexes of the general type [{Cpy(CO)2Fe}BiX2], as potential precursors for cyclopentadienyl iron-bismuth alkoxides or siloxides [{Cpy(CO)2Fe}Bi(OR)2] (R-OtBu, OSiMe2tBu), were obtained and characterised. The use of wide range of cyclopentadienyl rings in the iron carbonyl compounds allowed fo...

Antiferromagnetism in chromium alloy single crystals

DEFF Research Database (Denmark)

Bjerrum Møller, Hans; Trego, A.L.; Mackintosh, A.R.

1965-01-01

The antiferromagnetism of single crystals of dilute alloys of V, Mn and Re in Cr has been studied at 95°K and 300°K by neutron diffraction. The addition of V causes the diffraction peaks to decrease in intensity and move away from (100), while Mn and Re cause them to increase and approach (100) s...

Polarization-induced transport in organic field-effect transistors: the role of ferroelectric dielectrics

Science.gov (United States)

Guha, Suchismita; Laudari, Amrit

2017-08-01

The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport in organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and its copolymers are a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. The charge transport mechanism in an organic semiconductor often occurs at the intersection of band-like coherent motion and incoherent hopping through localized states. By choosing two small molecule organic semiconductors - pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) - along with a copolymer of PVDF (PVDF-TrFe) as the dielectric layer, the transistor characteristics are monitored as a function of temperature. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric. In contrast, TIPS-pentacene FETs show an activated transport with non-ferroelectric dielectrics. Pentacene FETs, on the other hand, show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. Further, we show that there is a strong correlation between the nature of traps in the organic semiconductor and interfacial transport in organic FETs, especially in the presence of a ferroelectric dielectric.

Composition dependent room temperature structure, electric and magnetic properties in magnetoelectric Pb(Fe{sub 1/2}Nb{sub 1/2})O{sub 3}−Pb(Fe{sub 2/3}W{sub 1/3})O{sub 3} solid-solutions

Energy Technology Data Exchange (ETDEWEB)

Matteppanavar, Shidaling [Department of Physics, Jnanabharathi Campus, Bangalore University, Bangalore, 560056 (India); Rayaprol, Sudhindra [UGC-DAE-Consortium for Scientific Research, Mumbai Centre, B A R C Campus, Mumbai, 400085 (India); Angadi, Basavaraj, E-mail: brangadi@gmail.com [Department of Physics, Jnanabharathi Campus, Bangalore University, Bangalore, 560056 (India); Sahoo, Balaram [Materials Research Centre, Indian Institute of Science, Bangalore, 560012 (India)

2016-08-25

We report on the studies of room temperature (RT) crystal structure, electric and magnetic properties of (1−x) Pb(Fe{sub 1/2}Nb{sub 1/2})O{sub 3} – x Pb(Fe{sub 2/3}W{sub 1/3})O{sub 3} (PFN{sub 1−x} – PFW{sub x}) (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) solid solutions through the measurements of X-ray diffraction, FTIR, scanning electron microscopy (SEM), Neutron diffraction, Raman, Magnetic, Mössbauer and ferroelectric measurements. FTIR spectra showed two main perovskite related transmission bands. The SEM analysis shows an average grain size of 2 μm for all the solid solutions. Rietveld refinement was performed on RT X-ray diffraction (XRD) and neutron diffraction (ND), which reveals, the monoclinic phase for x = 0.0 with space group Cm and Cubic phase for x = 1.0 with space group Pm-3m. In other words, increasing x, the samples exhibit a gradual phase transition from monoclinic to cubic. In addition, the Raman spectroscopy corroborates the change in structural symmetry from monoclinic (Cm) to cubic (Pm-3m) on varying x. The coexistence of both monoclinic and cubic symmetries was observed between x = 0.2–0.8. Magnetic measurements shows that, the magnetic phase transition from paramagnetic to antiferromagnetic (AFM) was observed at or above RT for x = 0.6 and above. The magnetic structure was refined using the propagation vector k = (½, ½, ½) and structure was found to be G-type antiferromagnetic. Magnetic properties (M-H loops) shows, a weak ferromagnetic behaviour with antiferromagnetic ordering at RT. At RT, x = 0.0–0.6 the samples exhibits disordered paramagnetic property but weakly coupled with antiferromagnetic domains. But, x = 0.8 and 1.0 samples show antiferromagnetic and they are weakly coupled with paramagnetic domains. The temperature dependent magnetization (M(T)) confirms, the augmentation of Néel temperature (T{sub N}) from 155 K to 350 K on increasing x. Mössbauer spectroscopy confirms superparamagnetic nature with the presence of

Critical slowing down of spin fluctuations in BiFeO3

International Nuclear Information System (INIS)

Scott, J F; Singh, M K; Katiyar, R S

2008-01-01

In earlier work we reported the discovery of phase transitions in BiFeO 3 evidenced by divergences in the magnon light-scattering cross-sections at 140 and 201 K (Singh et al 2008 J. Phys.: Condens. Matter 20 252203) and fitted these intensity data to critical exponents α = 0.06 and α' = 0.10 (Scott et al 2008 J. Phys.: Condens. Matter 20 322203), under the assumption that the transitions are strongly magnetoelastic (Redfern et al 2008 at press) and couple to strain divergences through the Pippard relationship (Pippard 1956 Phil. Mag. 1 473). In the present paper we extend those criticality studies to examine the magnon linewidths, which exhibit critical slowing down (and hence linewidth narrowing) of spin fluctuations. The linewidth data near the two transitions are qualitatively different and we cannot reliably extract a critical exponent ν, although the mean field value ν = 1/2 gives a good fit near the lower transition.

A ferroelectric memory technology for embedded LSI

CERN Document Server

Kunio, T

1999-01-01

We have developed an FeRAM (Ferroelectric Random Access Memory) embedded smart card LSI by using double metal 0.8- mu m CMOS technology. The smart-card has a 256-byte FeRAM macro and an 8-bit microcontroller. The FeRAM macro has the $9 performance of 10/sup 8/ endurance cycles and is half the size of an EEPROM macro. We have also developed a new CMVP (Capacitor on Meta/Via Stacked Plug) cell for an advanced FeRAM embedded LSI by using 0.25- mu m CMOS technology. $9 The ferroelectric capacitors of this cell are fabricated after the multiple interconnect is formed, and a cell area of 3.2 mu m/sup 2/ is obtained. (8 refs).

New antiferromagnetic semiconductor CuCr1.5Sb0.5S4

International Nuclear Information System (INIS)

Kesler, Ya.A.; Koroleva, L.I.; Mikheev, M.G.; Odintsov, A.G.; Filimonov, D.S.

1993-01-01

New halcogenide compound with spinel-antiferromagnetic semiconductor CuCr 1.5 Sb 0.5 S 4 are obtained and studied for the first time. Magnetic properties of this compound, namely, magnetization linear dependence, maximum on PHI(T) curve in the low-temperature area and realization of the Curie-Weis law for paramagnetic susceptibility with negative paramagnetic temperature testiby to the fact that this compound is antiferromagnetic

Nonlinear piezoelectricity in epitaxial ferroelectrics at high electric fields.

Science.gov (United States)

Grigoriev, Alexei; Sichel, Rebecca; Lee, Ho Nyung; Landahl, Eric C; Adams, Bernhard; Dufresne, Eric M; Evans, Paul G

2008-01-18

Nonlinear effects in the coupling of polarization with elastic strain have been predicted to occur in ferroelectric materials subjected to high electric fields. Such predictions are tested here for a PbZr0.2Ti0.8O3 ferroelectric thin film at electric fields in the range of several hundred MV/m and strains reaching up to 2.7%. The piezoelectric strain exceeds predictions based on constant piezoelectric coefficients at electric fields from approximately 200 to 400 MV/m, which is consistent with a nonlinear effect predicted to occur at corresponding piezoelectric distortions.