Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyeon Jun; Lee, Sung Su; Kwak, Jeong Hun; Kim, Young-Min; Jeong, Hu Young; Borisevich, Albina Y.; Lee, Su Yong; Noh, Do Young; Kwon, Owoong; Kim, Yunseok; Jo, Ji Young

2016-12-01

For epitaxial films, a critical thickness (t_c) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO₃ thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO₃/SrRuO₃/SrTiO₃ substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO₃ film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

Science.gov (United States)

Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

2016-10-01

In this work, Pd:NiFe2O4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe2O4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost.

Nanoscale Control of Exchange Bias with BiFeO3 Thin Films

NARCIS (Netherlands)

Martin, Lane W.; Chu, Ying-Hao; Holcomb, Mikel B.; Huijben, Mark; Yu, Pu; Han, Shu-Jen; Lee, Donkoun; Wang, Shan X.; Ramesh, R.

2008-01-01

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co0.9Fe0.1/BiFeO3 heterostructures. Two distinct types of interactions − an enhancement of the coercive field (exchange enhancement) and an enhancement of the coercive field

BiFeO3 thin films: Novel effects

Indian Academy of Sciences (India)

photolithography followed by etching of the silver film. Saturation ... Fe in +3 state. Films thus obtained are therefore highly resistive (ρ ∼ 108–109 cm) and hence exhibit saturated ferroelectric hysteresis loop (figure 3). Anomaly in ... BiFeO3 bulk sample by Rogniskaya et al [4] had indicated abrupt change in lattice parame-.

Physical properties of Fe doped Mn3O4 thin films synthesized by SILAR method and their antibacterial performance against E. coli

Directory of Open Access Journals (Sweden)

M.R. Belkhedkar

2016-09-01

Full Text Available Nanocrystalline Fe doped Mn3O4 thin films were deposited by successive ionic layer adsorption and reaction method onto glass substrates. The X-ray diffraction study revealed that Fe doped Mn3O4 films are nanocrystalline in nature. The morphological investigations were carried out by using field emission scanning electron and atomic force microscopy studies. The optical absorption measurements showed that Mn3O4 films exhibit direct band gap energy of the order of 2.78 eV and it increased to 2.89 eV as the percentage of Fe doping in it increases from 0 to 8 wt.%. The room temperature electrical resistivity of Mn3O4 increases from 1.84 × 103 to 2.64 × 104 Ω cm as Fe doping increases from 0 to 8 wt.%. The SILAR grown Mn3O4 showed antibacterial performance against Escherichia coli bacteria which improved remarkably with doping.

Kinetics and Mechanisms of Oxygen Surface Exchange on La0.6Sr0.4FeO3-delta Thin Films

OpenAIRE

Mosleh, Majid; Søgaard, Martin; Hendriksen, Peter Vang

2009-01-01

The thermodynamic properties as well as oxygen exchange kinetics were examined on mixed ionic and electronic conducting (La0.6Sr0.4)0.99FeO3− (LSF64) thin films deposited on MgO single crystals. It is found that thin films and bulk material have the same oxygen stoichiometry for a given temperature and oxygen partial pressure [i.e., the incorporation reaction has the same reaction enthalpy (H0=−105 KJ/mol) and entropy (S0=−75.5 J/mol/K) as found for bulk material]. The thin film shows smaller...

Structure and magnetic properties of Fe doped In{sub 2}O{sub 3} thin films prepared by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu, Tamilnadu -603104 (India)

2015-06-24

Pure and Fe (7 at.%) doped In{sub 2}O{sub 3} thin films were grown onto the glass substrates by electron beam evaporation technique. The structural and magnetic properties of the pure and Fe doped In{sub 2}O{sub 3} thin films have been studied. The undoped and Fe doped In{sub 2}O{sub 3} thin films shown ferromagnetic property at room temperature. A magnetization of 24 emu/cm{sup 3} was observed for pure In{sub 2}O{sub 3} thin films. The magnetization of 38.23 emu/cm{sup 3} was observed for the Fe (7 at.%) doped In{sub 2}O{sub 3} thin films.

Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

International Nuclear Information System (INIS)

Puli, Venkata Sreenivas; Chrisey, Douglas B; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Misra, Pankaj; Scott, J F; Katiyar, Ram S; Coondoo, Indrani; Panwar, Neeraj

2014-01-01

We report photovoltaic (PV) effect in multiferroic Bi 0.9 Sm 0.1 Fe 0.95 Co 0.05 O 3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (V oc ) and the short-circuit current density (J sc ) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm −2 . Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. (paper)

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films

Science.gov (United States)

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-03-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu1 - x Fe x O3 - δ epitaxial thin films ( x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu1 - x Fe x O3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR ( 36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies ( δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr1 - x La x )(Ru1 - x Fe x )O3. These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu1 - x Fe x O3 - δ thin films.

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

Science.gov (United States)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

Electronic structure of Cr doped Fe3O4 thin films by X-ray absorption near-edge structure spectroscopy

Science.gov (United States)

Chen, Chi-Liang; Dong, Chung-Li; Asokan, Kandasami; Chern, G.; Chang, C. L.

2018-04-01

Present study reports the electronic structures of Cr doped Fe3O4 (Fe3-xCrxO4 (0 ≤ x ≤ 3) grown on MgO (100) substrates in the form of thin films fabricated by a plasma-oxygen assisted Molecular Beam Epitaxy (MBE). X-ray absorption near-edge structure (XANES) spectra at Cr & Fe L-, and O K-edges were used to understand the electronic structure: changes in the bonding nature, valence states, and site occupancies. Cr doping in Fe3O4 results in the change of charge transfer, crystal structure, and selective occupation of ions in octahedral and tetrahedral sites. Such change modifies the electrical and magnetic properties due to the covalency of Cr ions. The physical and chemical properties of ferrites are strongly dependent on the lattice site, ion size of dopant, and magnetic nature present at different structural symmetry of the spinel structure.

Synthesis of nanocrystalline nickel-zinc ferrite (Ni0.8Zn0.2Fe2O4) thin films by chemical bath deposition method

International Nuclear Information System (INIS)

Pawar, D.K.; Pawar, S.M.; Patil, P.S.; Kolekar, S.S.

2011-01-01

Graphical abstract: Display Omitted Research highlights: → We have successfully synthesized nickel-zinc ferrite (Ni 0.8 Zn 0.2 Fe 2 O 4 ) thin films on stainless steel substrates using a low temperature chemical bath deposition method. → The surface morphological study showed the compact flakes like morphology. → The as-deposited thin films are hydrophilic (10 o o ) whereas the annealed thin films are super hydrophilic (θ o ) in nature. → Ni 0.8 Zn 0.2 Fe 2 O 4 thin films could be used in supercapacitor. - Abstract: The nickel-zinc ferrite (Ni 0.8 Zn 0.2 Fe 2 O 4 ) thin films have been successfully deposited on stainless steel substrates using a chemical bath deposition method from alkaline bath. The films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), static water contact angle and cyclic voltammetry measurements. The X-ray diffraction pattern shows that deposited Ni 0.8 Zn 0.2 Fe 2 O 4 thin films were oriented along (3 1 1) plane. The FTIR spectra showed strong absorption peaks around 600 cm -1 which are typical for cubic spinel crystal structure. SEM study revealed compact flakes like morphology having thickness ∼1.8 μm after air annealing. The annealed films were super hydrophilic in nature having a static water contact angle (θ) of 5 o .The electrochemical supercapacitor study of Ni 0.8 Zn 0.2 Fe 2 O 4 thin films has been carried out in 6 M KOH electrolyte. The values of interfacial and specific capacitances obtained were 0.0285 F cm -2 and 19 F g -1 , respectively.

Synthesis of BiFeO3 thin films on single-terminated Nb : SrTiO3 (111 substrates by intermittent microwave assisted hydrothermal method

Directory of Open Access Journals (Sweden)

Ivan Velasco-Davalos

2016-06-01

Full Text Available We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO3 (111 substrates and the deposition of ferroelectric BiFeO3 thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO34− or Ti4+ layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d111 and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO3 single crystal substrates. Multiferroic BiFeO3 thin films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO3 (111 substrates. Bi(NO33 and Fe(NO33 along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO3 films on Nb : SrTiO3 (100 substrates was verified by piezoresponse force microscopy.

Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates

International Nuclear Information System (INIS)

Chen Xinman; Zhang Hu; Ruan Kaibin; Shi Wangzhou

2012-01-01

Highlights: ► Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films with Pt/BiFeO 3 /LNO was reported. ► Rectification property was explained from the asymmetrical contact between top and bottom interfaces and the distinct oxygen vacancy density. ► The modification of Schottky-like barrier was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices. - Abstract: We reported the annealing effect on the electrical behaviors of BiFeO 3 thin films integrated on LaNiO 3 (LNO) layers buffered Si substrates by sol–gel spin-coating technique. All the BiFeO 3 thin films exhibit the reversible bipolar resistive switching behaviors with Pt/BiFeO 3 /LNO configuration. The electrical conduction mechanism of the devices was dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. Good diode-like rectification property was observed in device with BiFeO 3 film annealed at 500 °C, but vanished in device with BiFeO 3 film annealed at 600 °C. This was attributed to the asymmetrical contact between top and bottom interfaces as well as the distinct oxygen vacancy density verified by XPS. Furthermore, the modification of Schottky-like barrier due to the drift of oxygen vacancies was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices.

Multiferroic BiFeO{sub 3} thin films: Structural and magnetic characterization

Energy Technology Data Exchange (ETDEWEB)

Ali, Z. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt); Atta, A. [National Center for Radiation Research and Technology (NCRRT), Nasr City, Cairo (Egypt); Abbas, Y. [Physics Department, Faculty of Science, Suez Canal University, Ismailia (Egypt); Sedeek, K.; Adam, A.; Abdeltwab, E. [Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt)

2015-02-27

BiFeO{sub 3} (BFO) film has been deposited on indium tin oxide (ITO) substrate by a simple sol–gel spin-coating technique. The crystal phase composition, surface morphology, topography and magnetization measurements of the BFO thin film were investigated using grazing incidence X-ray diffraction (GIXRD), scanning electronic microscope (SEM), atomic force microscope and vibrating sample magnetometer, respectively. GIXRD analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section SEM results indicated that compact and homogeneous BFO thin film was deposited on ITO with a thickness of about 180 nm. Moreover, most of A and E-symmetry normal modes of R3c BFO were assigned by Raman spectroscopy. We report here that the pure phase BFO film shows ferromagnetism at room temperature with remarkably high saturation magnetization of 63 kA m{sup −1}. Our results are discussed mainly in correlation with the condition of processing technique and destruction of the spiral spin cycloid at interface layers and grain boundaries. - Highlights: • Multiferroic BiFeO{sub 3} (BFO) thin film was prepared by sol–gel spin-coating method. • BFO film w asdeposited on indium tin oxide substrate with a thickness of 180 nm. • The film exhibits pure rhombohedral perovskite structure. • High saturation magnetization was recorded for our film at room temperature.

Photoelectrochemical Characterization of Sprayed alpha-Fe2O3 Thin Films : Influence of Si Doping and SnO2 Interfacial Layer

NARCIS (Netherlands)

Liang, Y.; Enache, C.S.; Van De Krol, R.

2008-01-01

a-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc)3. The donor density in the Fe2O3 films could be tuned between 10171020cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting

On stoichiometry and intermixing at the spinel/perovskite interface in CoFe2O4/BaTiO3 thin films.

Science.gov (United States)

Tileli, Vasiliki; Duchamp, Martial; Axelsson, Anna-Karin; Valant, Matjaz; Dunin-Borkowski, Rafal E; Alford, Neil McN

2015-01-07

The performance of complex oxide heterostructures depends primarily on the interfacial coupling of the two component structures. This interface character inherently varies with the synthesis method and conditions used since even small composition variations can alter the electronic, ferroelectric, or magnetic functional properties of the system. The focus of this article is placed on the interface character of a pulsed laser deposited CoFe2O4/BaTiO3 thin film. Using a range of state-of-the-art transmission electron microscopy methodologies, the roles of substrate morphology, interface stoichiometry, and cation intermixing are determined on the atomic level. The results reveal a surprisingly uneven BaTiO3 substrate surface formed after the film deposition and Fe atom incorporation in the top few monolayers inside the unit cell of the BaTiO3 crystal. Towards the CoFe2O4 side, a disordered region extending several nanometers from the interface was revealed and both Ba and Ti from the substrate were found to diffuse into the spinel layer. The analysis also shows that within this somehow incompatible composite interface, a different phase is formed corresponding to the compound Ba2Fe3Ti5O15, which belongs to the ilmenite crystal structure of FeTiO3 type. The results suggest a chemical activity between these two oxides, which could lead to the synthesis of complex engineered interfaces.

Synthesis of BiFeO{sub 3} thin films on single-terminated Nb : SrTiO{sub 3} (111) substrates by intermittent microwave assisted hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Velasco-Davalos, Ivan; Ambriz-Vargas, Fabian; Kolhatkar, Gitanjali; Thomas, Reji, E-mail: ruediger@emt.inrs.ca, E-mail: reji.thomas@emt.inrs.ca; Ruediger, Andreas, E-mail: ruediger@emt.inrs.ca, E-mail: reji.thomas@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650 Lionel-Boulet, Varennes, Québec, J3X1S2 (Canada)

2016-06-15

We report on a simple and fast procedure to create arrays of atomically flat terraces on single crystal SrTiO{sub 3} (111) substrates and the deposition of ferroelectric BiFeO{sub 3} thin films on such single-terminated surfaces. A microwave-assisted hydrothermal method in deionized water and ammonia solution selectively removes either (SrO{sub 3}){sup 4−} or Ti{sup 4+} layers to ensure the same chemical termination on all terraces. Measured step heights of 0.225 nm (d{sub 111}) and uniform contrast in the phase image of the terraces confirm the single termination in pure and Nb doped SrTiO{sub 3} single crystal substrates. Multiferroic BiFeO{sub 3} thin films were then deposited by the same microwave assisted hydrothermal process on Nb : SrTiO{sub 3} (111) substrates. Bi(NO{sub 3}){sub 3} and Fe(NO{sub 3}){sub 3} along with KOH served as the precursors solution. Ferroelectric behavior of the BiFeO{sub 3} films on Nb : SrTiO{sub 3} (100) substrates was verified by piezoresponse force microscopy.

Structural and photodegradation behaviors of Fe{sup 3+}-doping TiO{sub 2} thin films prepared by a sol–gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Lin, Huey-Jiuan; Yang, Tien-Syh [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China); Wang, Moo-Chin, E-mail: mcwang@kmu.edu.tw [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 80782, Taiwan (China); Hsi, Chi-Shiung, E-mail: chsi@nuu.edu.tw [Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2014-10-15

Highlights: • Pure and various Fe{sup 3+}-doped TiO{sub 2} thin films have been successfully fabricated. • The phase of all thin films was single phase of anatase TiO{sub 2} when calcined at 823 K. • The crystallinity of TiO{sub 2} thin films decreased as Fe{sup 3+}-doping increased. • The photodegradation of each sample increased as the irradiation time increased. • The photodegradation increased as Fe{sup 3+}-doping increased at a fixed irradiation time. - Abstract: Pure and various Fe{sup 3+}-doping TiO{sub 2} thin films have been successfully fabricated on glass substrate prepared by a sol–gel spin coating route. The structural and photodegradation behavior of these films after calcined at various temperatures for 1 h were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectrum and degradation of 1.0 × 10{sup −5} M methylene blue solution. When all thin films after calcined at 823 K for 1 h, the crystalline phase are comprised only contained single phase of anatase TiO{sub 2}. The crystallinity of various Fe{sup 3+}-doping TiO{sub 2} thin films decreases with Fe{sup 3+}-doping concentration increased. The PL intensity of all thin films also decreases with Fe{sup 3+}-doping concentration increased. When all various Fe{sup 3+}-doping TiO{sub 2} thin films after calcined at 823 K for 1 h, the photodegradation of each sample increases with irradiation time increased. Moreover, the photodegradation also increases with Fe{sup 3+}-doping concentration increased when fixed at constant irradiation time.

Giant Polarization Rotation in BiFeO3/SrTiO3 Thin Films.

Science.gov (United States)

Langner, M. C.; Chu, Y. H.; Martin, L. M.; Gajek, M.; Ramesh, R.; Orenstein, J.

2008-03-01

We use optical second harmonic generation to probe dynamics of the ferroelectric polarization in (111) oriented BiFeO3 thin films grown on SrTiO3 substrates. The second harmonic response indicates 3m point group symmetry and is consistent with a spontaneous polarization normal to the surface of the film. We measure large changes in amplitude and lowering of symmetry, consistent with polarization rotation, when modest electric fields are applied in the plane of the film. At room temperature the rotation is an order of magnitude larger than expected from reported values of the dielectric constant and increases further (as 1/T) as temperature is lowered. We propose a substrate interaction model to explain these results.

Structure and cation distribution of (Mn0.5Zn0.5)Fe2O4 thin films on SrTiO3(001)

Science.gov (United States)

Welke, M.; Brachwitz, K.; Lorenz, M.; Grundmann, M.; Schindler, K.-M.; Chassé, A.; Denecke, R.

2017-06-01

A comprehensive study on growth of ferrimagnetic manganese zinc ferrite (Mn0.5Zn0.5Fe2O4) films on single crystalline strontium titanate(001) (SrTiO3) substrates was carried out. Under the optimized conditions, a thin film with a layer thickness of 200 nm was deposited, and the structural properties were investigated. Contrary to data published in literature, no buffer layer was necessary to achieve epitaxial growth of a poorly lattice-matched layer. This was confirmed for Mn0.5Zn0.5Fe2O4(001) on SrTiO3(001) by x-ray diffraction and the adjoined phi scans, which also revealed a lattice compression of 1.2% of the manganese zinc ferrite film in the out-of-plane direction. Using x-ray photoelectron spectroscopy, the near surface stoichiometry of the film could be shown to agree with the intended one within the uncertainty of the method. X-ray absorption spectroscopy showed an electronic structure close to that published for bulk samples. Additional x-ray magnetic circular dichroism investigations were performed to answer detailed structural questions by a comparison of experimental data with the calculated ones. The calculations took into account ion sites (tetrahedral vs. octahedral coordination) as well as the charge of Fe ions (Fe2+ vs. Fe3+). Contrary to the expectation for a perfect normal spinel that only Fe3+ ions are present in octahedral sites, hints regarding the presence of additional Fe2+ in octahedral sites as well as Fe3+ ions in tetrahedral sites have been obtained. Altogether, the layer could be shown to be mostly in a normal spinel configuration.

Spin Seebeck effect in insulating epitaxial γ−Fe2O3 thin films

Directory of Open Access Journals (Sweden)

P. Jiménez-Cavero

2017-02-01

Full Text Available We report the fabrication of high crystal quality epitaxial thin films of maghemite (γ−Fe2O3, a classic ferrimagnetic insulating iron oxide. Spin Seebeck effect (SSE measurements in γ−Fe2O3/Pt bilayers as a function of sample preparation conditions and temperature yield a SSE coefficient of 0.5(1 μV/K at room temperature. Dependence on temperature allows us to estimate the magnon diffusion length in maghemite to be in the range of tens of nanometers, in good agreement with that of conducting iron oxide magnetite (Fe3O4, establishing the relevance of spin currents of magnonic origin in magnetic iron oxides.

Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

KAUST Repository

Yao, Yingbang; Zhang, Bei; Chen, Long; Yang, Yang; Wang, Zhihong; Alshareef, Husam N.; Zhang, Xixiang

2012-01-01

Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar

Fe3O4 epitaxial films

KAUST Repository

Liu, Xiang; Mi, Wenbo; Zhang, Qiang; Zhang, Xixiang

2017-01-01

fast charge ordering process and a continuous formation process of trimeron, which is comfirmed by the temperature-dependent Raman spectra. Just below T-V, the twofold AMR in Fe3O4(100) film originates from uniaxial magnetic anisotropy. The fourfold AMR

Room temperature multiferroic properties of (Fe{sub x}, Sr{sub 1−x})TiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Kim, Kyoung-Tae; Kim, Cheolbok; Fang, Sheng-Po; Yoon, Yong-Kyu, E-mail: ykyoon@ece.ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2014-09-08

This letter reports the structural, dielectric, ferroelectric, and magnetic properties of Fe substituted SrTiO{sub 3} thin films in room temperature. The structural data obtained from x-ray diffraction indicates that (Fe{sub x},Sr{sub 1−x})TiO{sub 3}, the so called FST, transforms from pseudocubic to tetragonal structures with increase of the Fe content in SrTiO{sub 3} thin films, featuring the ferroelectricity, while vibrating sample magnetometer measurements show magnetic hysteresis loops for the samples with low iron contents indicating their ferromagnetism. The characterized ferroelectricity and ferromagnetism confirms strong multiferroitism of the single phase FST thin films in room temperature. Also, an FST thin film metal-insulator-metal multiferroic capacitor has been fabricated and characterized in microwave frequencies between 10 MHz and 5 GHz. A capacitor based on Fe{sub 0.1}Sr{sub 0.9}TiO{sub 3} with a thickness of 260 nm shows a high electric tunability of 18.6% at 10 V and a maximum magnetodielectric value of 1.37% at 0.4 mT with a loss tangent of 0.021 at 1 GHz. This high tuning and low loss makes this material as a good candidate for frequency agile microwave devices such as tunable filters, phase shifters, and antennas.

Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

Directory of Open Access Journals (Sweden)

Glenda Biasotto

2011-03-01

Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

Magnetically tunable dielectric, impedance and magnetoelectric response in MnFe{sub 2}O{sub 4}/(Pb{sub 1−x}Sr{sub x})TiO{sub 3} composites thin films

Energy Technology Data Exchange (ETDEWEB)

Bala, Kanchan, E-mail: bala.kanchan1987@gmail.com [Department of Physics, Himachal Pradesh University, Shimla 171005 (India); Kotnala, R.K. [CSIR, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012 (India); Negi, N.S., E-mail: nsn_phy_hpu@yahoo.com [Department of Physics, Himachal Pradesh University, Shimla 171005 (India)

2017-02-15

We have synthesized piezomagnetic–piezoelectric composites thin films MnFe{sub 2}O{sub 4}/(Pb{sub 1−x}Sr{sub x})TiO{sub 3}, where x=0.1, 0.2, and 0.3, using the metalorganic deposition (MOD) reaction method. The structural and microstructural analysis using the X-ray diffraction (XRD), AFM, and SEM reveals the presence of homogenous growth of both pervoskite and spinel phases in the composite films. Our results show that all the composites films exhibit good multiferroic as well as considerable magnetoelectric coupling. The impedance (Z′ and Z″) and electrical modulus (M′ and M″) Nyquist plots show distinct electrical responses with the magnetic field. Our analyses suggest that this electrical response arises due to the coexistence of the high resistive phase and the comparatively conductive phase in the MFO/PST composite films. The maximum magnetoelectric coefficient (α) is found to be 4.29 V Oe{sup −1} cm{sup −1} and 2.82 V Oe{sup −1} cm{sup −1} for compositions x=0.1 and 0.2. These values are substantially larger than those reported for bilayer composites thin films in literature and make them interesting for room temperature device applications. - Highlights: • Influence of Sr doping on multiferroic and magnetoelectric properties composites thin films of MnFe{sub 2}O{sub 4} and (Pb, Sr)TiO{sub 3}. • Dielectric constant and dielectric loss with application of magnetic field. • Magnetically tunable AC electrical properties. • Magnetoelectric coupling in MnFe{sub 2}O{sub 4}/(Pb, Sr)TiO{sub 3} composite films by passive method.

Structural characterization of epitaxial LiFe_5O_8 thin films grown by chemical vapor deposition

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Sahu, R.; Pachauri, N.; Gupta, A.; Datta, R.

2016-01-01

We report on detailed microstructural and atomic ordering characterization by transmission electron microscopy in epitaxial LiFe_5O_8 (LFO) thin films grown by chemical vapor deposition (CVD) on MgO (001) substrates. The experimental results of LFO thin films are compared with those for bulk LFO single crystal. Electron diffraction studies indicate weak long-range ordering in LFO (α-phase) thin films in comparison to bulk crystal where strong ordering is observed in optimally annealed samples. The degree of long-range ordering depends on the growth conditions and the thickness of the film. Annealing experiment along with diffraction study confirms the formation of α-Fe_2O_3 phase in some regions of the films. This suggests that under certain growth conditions γ-Fe_2O_3-like phase forms in some pockets in the as-grown LFO thin films that then convert to α-Fe_2O_3 on annealing. - Highlights: • Atomic ordering in LiFe_5O_8 bulk single crystal and epitaxial thin films. • Electron diffraction studies reveal different level of ordering in the system. • Formation of γ-Fe_2O_3 like phase has been observed.

Influences of annealing temperature on sprayed CuFeO2 thin films

Science.gov (United States)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Magnetic properties of pure and Fe doped HoCrO{sub 3} thin films fabricated via a solution route

Energy Technology Data Exchange (ETDEWEB)

Yin, Shiqi; Sauyet, Theodore [Department of Physics, University of Connecticut, Storrs, CT 06269 (United States); Guild, Curt [Department of Chemistry, University of Connecticut, Storrs, CT 06269 (United States); Suib, S.L. [Department of Chemistry, University of Connecticut, Storrs, CT 06269 (United States); Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Jain, Menka, E-mail: menka.jain@uconn.edu [Department of Physics, University of Connecticut, Storrs, CT 06269 (United States); Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States)

2017-04-15

Multiferroic properties of orthorhombically distorted perovskite rare-earth chromites, such as HoCrO{sub 3}, are being investigated extensively in recent years. In the present work, we report on the effect of Fe substitution on the magnetic properties of HoCrO{sub 3} thin films. Thin films of HoCrO{sub 3} and HoCr{sub 0.7}Fe{sub 0.3}O{sub 3} were fabricated via a solution route on platinized silicon substrates. Structural properties of the films were evaluated by X-ray diffraction and Raman spectroscopy techniques. The surface morphology and cross-sections of the films were examined using scanning electron microscopy. Optical band gaps of pure and Fe doped HoCrO{sub 3} films are found to be 3.45 eV and 3.39 eV, respectively. The magnetization measurements show that the Néel temperatures (where Cr{sup 3+} orders) for the HoCrO{sub 3} and HoCr{sub 0.7}Fe{sub 0.3}O{sub 3} films are 134 and 148 K, respectively. In a magnetic field of 2 T, the maximum entropy change and relative cooling power, two parameters to evaluate the magnetocaloric properties of a material, were 0.813 J/kg K at 11 K and 21.1 J/kg for HoCrO{sub 3} film, in comparison with 0.748 J/kg K at 15 K and 26.8 J/kg for HoCr{sub 0.7}Fe{sub 0.3}O{sub 3} film. To our knowledge, this is the first work exploring the band gap and magnetocaloric properties of rare-earth chromite thin films. These findings should inspire the development of rare-earth chromite thin films for temperature control of nanoscale electronic devices and sensors in the low temperature region (< 30 K). - Highlights: • Phase-pure HoCrO{sub 3} and HoCr{sub 0.7}Fe{sub 0.3}O{sub 3}films were fabricated on platinized Sivia a solution route. • This is the first work on the exploration of band gap and magnetocaloric properties of rare-earth chromitefilms. • From 0-2 T, maximum entropy change for the HoCrO{sub 3} film was 0.813 J/kg K at 11 K.From 0-2 T, maximum entropy change for HoCr{sub 0.7}Fe{sub 0.3}O{sub 3} film was 0.748 J/kg K at 15

A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

Science.gov (United States)

Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

2013-03-01

Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

Nanotextured Spikes of α-Fe2O3/NiFe2O4 Composite for Efficient Photoelectrochemical Oxidation of Water.

Science.gov (United States)

Hussain, Shabeeb; Tavakoli, Mohammad Mahdi; Waleed, Aashir; Virk, Umar Siddique; Yang, Shihe; Waseem, Amir; Fan, Zhiyong; Nadeem, Muhammad Arif

2018-03-27

We demonstrate for the first time the application of p-NiFe 2 O 4 /n-Fe 2 O 3 composite thin films as anode materials for light-assisted electrolysis of water. The p-NiFe 2 O 4 /n-Fe 2 O 3 composite thin films were deposited on planar fluorinated tin oxide (FTO)-coated glass as well as on 3D array of nanospike (NSP) substrates. The effect of substrate (planar FTO and 3D-NSP) and percentage change of each component (i.e., NiFe 2 O 4 and Fe 2 O 3 ) of composite was studied on photoelectrochemical (PEC) water oxidation reaction. This work also includes the performance comparison of p-NiFe 2 O 4 /n-Fe 2 O 3 composite (planar and NSP) devices with pure hematite for PEC water oxidation. Overall, the nanostructured p-NiFe 2 O 4 /n-Fe 2 O 3 device with equal molar 1:1 ratio of NiFe 2 O 4 and Fe 2 O 3 was found to be highly efficient for PEC water oxidation as compared with pure hematite, 1:2 and 1:3 molar ratios of composite. The photocurrent density of 1:1 composite thin film on planar substrate was equal to 1.07 mA/cm 2 at 1.23 V RHE , which was 1.7 times higher current density as compared with pure hematite device (0.63 mA/cm 2 at 1.23 V RHE ). The performance of p-NiFe 2 O 4 /n-Fe 2 O 3 composites in PEC water oxidation was further enhanced by their deposition over 3D-NSP substrate. The highest photocurrent density of 2.1 mA/cm 2 at 1.23 V RHE was obtained for the 1:1 molar ratio p-NiFe 2 O 4 /n-Fe 2 O 3 composite on NSP (NF1-NSP), which was 3.3 times more photocurrent density than pure hematite. The measured applied bias photon-to-current efficiency (ABPE) value of NF1-NSP (0.206%) was found to be 1.87 times higher than that of NF1-P (0.11%) and 4.7 times higher than that of pure hematite deposited on FTO-coated glass (0.044%). The higher PEC water oxidation activity of p-NiFe 2 O 4 /n-Fe 2 O 3 composite thin film as compared with pure hematite is attributed to the Z-path scheme and better separation of electrons and holes. The increased surface area and greater light

The effects of Fe2O3 nanoparticles on MgB2 superconducting thin films

International Nuclear Information System (INIS)

Koparan, E.T.; Sidorenko, A.; Yanmaz, E.

2013-01-01

Full text: Since the discovery of superconductivity in binary MgB 2 compounds, extensive studies have been carried out because of its excellent properties for technological applications, such as high transition temperature (T c = 39 K), high upper critical field (H c2 ), high critical current density (J c ). Thin films are important for fundamental research as well as technological applications of any functional materials. Technological applications primarily depend on critical current density. The strong field dependence of J c for MgB 2 necessitates an enhancement in flux pinning performance in order to improve values in high magnetic fields. An effective way to improve the flux pinning is to introduce flux pinning centers into MgB 2 through a dopant having size comparable to the coherence length of MgB 2 . In this study, MgB 2 film with a thickness of about 600 nm was deposited on the MgO (100) single crystal substrate using a 'two-step' synthesis technique. Firstly, deposition of boron thin film was carried out by rf magnetron sputtering on MgO substrates and followed by a post deposition annealing at 850 degrees Celsius in magnesium vapour. In order to investigate the effect of Fe 2 O 3 nanoparticles on the structural and magnetic properties of films, MgB 2 films were coated with different concentrations of Fe 2 O 3 nanoparticles by a spin coating process. The effects of different concentrations of ferromagnetic Fe 2 O 3 nanoparticles on superconducting properties of obtained films were carried out by using structural (XRD, SEM, AFM), electrical (R-T) and magnetization (M-H, M-T and AC Susceptibility) measurements. It was calculated that anisotropic coefficient was about γ = 1.2 and coherence length of 5 nm for the uncoated film. As a result of coherence length, the appropriate diameters of Fe 2 O 3 nanoparticles were found to be 10 nm, indicating that these nanoparticles served as the pinning centers. Based on the data obtained from this study, it can be

A Novel Ternary CoFe2O4/CuO/CoFe2O4 as a Giant Magnetoresistance Sensor

Directory of Open Access Journals (Sweden)

Ramli

2016-12-01

Full Text Available This paper reports the results of a study relating to the synthesis of a novel ternary CoFe2O4/CuO/CoFe2O4 thin film as a giant magnetoresistance (GMR sensor. The CoFe2O4/CuO/CoFe2O4 thin film was prepared onto silicon substrate via DC magnetron sputtering with the targets facing each other. X-ray diffraction was used to determine the structure of the thin film and a 4-point method was used to measure the MR ratio. The GMR ratio is highly dependent on the ferrimagnetic (CoFe2O4 and nonmagnetic (CuO layer thickness. The maximum GMR ratio at room temperature obtained in the CoFe2O4/CuO/CoFe2O4 thin film was 70% when the CoFe2O4 and the CuO layer had a thickness of 62.5 nm and 14.4 nm respectively.

Vibrational spectroscopy and analytical electron microscopy studies of Fe-V-O and In-V-O thin films

CERN Document Server

Vuk, A S; Drazic, G; Colomban, P

2002-01-01

Orthovanadate (M sup 3 sup + VO sub 4; M= Fe, In) and vanadate (Fe sub 2 V sub 4 O sub 1 sub 3) thin films were prepared using sol-gel synthesis and dip coating deposition. Using analytical electron microscopy (AEM), the chemical composition and the degree of crystallization of the phases present in the thin Fe-V-O films were investigated. TEM samples were prepared in both orientations: parallel (plan view) and perpendicular (cross section) to the substrate. In the first stages of crystallization, when the particle sizes were in the nanometer range, the classical identification of phases using electron diffraction was not possible. Instead of measuring d values, experimentally selected area electron diffraction (SAED) patterns were compared to calculated (simulated) patterns in order to determine the phase composition. The problems of evaluating the ratio of amorphous and crystalline phases in thin films are reported. Results of TEM and XRD as well as IR and Raman spectroscopy showed that the films made at lo...

Magnetic and transport properties of Zn0.4Fe2.6O4 thin films with highly preferential orientation

International Nuclear Information System (INIS)

Lu, Z.L.; Zou, W.Q.; Liu, X.C.; Lin, Y.B.; Lu, Z.H.; Wang, J.F.; Xu, J.P.; Lv, L.Y.; Zhang, F.M.; Du, Y.W.

2007-01-01

Highly preferentially oriented Zn 0.4 Fe 2.6 O 4 thin films have been fabricated on Si, SrTiO 3 and ZrO 2 substrates, respectively, using RF magnetron sputtering. All the films show a large saturation magnetization of about 4.2μ B and low coercive field at 300 K and a spin (cluster) glass transition at about 60 K due to the non-magnetic Zn 2+ ions substitution. Moreover, the fairly high spin polarization of the carrier at 300 K has been confirmed by both the giant magnetoresistance and anomalous Hall coefficient measurements

Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate

International Nuclear Information System (INIS)

Leontyev, I N; Janolin, P-E; Dkhil, B; Yuzyuk, Yu I; El-Marssi, M; Chernyshov, D; Dmitriev, V; Golovko, Yu I; Mukhortov, V M

2011-01-01

A Nd-doped BiFeO 3 thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45 0 with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

BiFeO3 epitaxial thin films and devices: past, present and future

Science.gov (United States)

Sando, D.; Barthélémy, A.; Bibes, M.

2014-11-01

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films.

Science.gov (United States)

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-12-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu 1 - x Fe x O 3 - δ epitaxial thin films (x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu 1 - x Fe x O 3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR (~36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies (δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr 1 - x La x )(Ru 1 - x Fe x )O 3 . These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu 1 - x Fe x O 3 - δ thin films.

Comparative study on substitution effects in BiFeO{sub 3} thin films fabricated on FTO substrates by chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Xue, Xu; Tan, Guoqiang, E-mail: tan3114@163.com; Hao, Hangfei; Ren, Huijun

2013-10-01

Pure BiFeO{sub 3} (BFO), BiFe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BFCO) and Bi{sub 0.90}Gd{sub 0.10}Fe{sub 0.97}Co{sub 0.03}O{sub 3−δ} (BGFCO) thin films were successfully deposited on FTO substrates by chemical solution deposition technique. The field emission scanning electron microscope reveals that the surface morphology of the BGFCO thin film becomes more compact and uniform than that of the other two films. A slight lattice distortion is created in the BFCO thin film, whereas 10% Gd doping gives rise to tetragonal phase transition and (1 1 0) preferentially oriented film texture for the BGFCO thin film, as evidenced by Raman scattering spectra and X-ray diffraction analyses. X-ray photoelectron spectroscopy analyses clarify that Co-doping results in the increase of oxygen vacancy concentration in the BFCO film, while further introduction of Gd into the BFCO lattice can decrease oxygen vacancy concentration, and the concentrations of Fe{sup 2+} ions in the BFCO and BGFCO thin films are less than that in the BFO counterpart. The BFCO film shows the improved remanent polarization (P{sub r}) of 11.2 μC/cm{sup 2} compared with that of 1.4 μC/cm{sup 2} for the BFO film. The high breakdown strength, low leakage current density in the high electric filed, improved dielectric properties as well as the increased stereochemical activity of Bi ion lone electron pair of the BGFCO thin film all together contribute to the giant P{sub r} of 139.6 μC/cm{sup 2} at room temperature.

Thin film composites in the BiFeO3–Bi4Ti3O12 system obtained by an aqueous solution-gel deposition methodology

Directory of Open Access Journals (Sweden)

Carlos Gumiel

2018-01-01

Full Text Available Thin film multiferroic composites, with a high quantity of interfaces between the different materials, represent a more feasible alternative to single phase systems in which the multifunctional response is usually hampered due to intrinsic physical constraints. Nowadays some of these composites can be produced by applying deposition techniques such as PLD, CVD, MBE or the like, which allow a high degree of crystallographic control. However, despite their effectiveness, all these techniques also involve a high consumption of energy in terms of temperature and/or vacuum. Within this frame, the present contribution proposes a sustainable chemical solution deposition process to prepare thin films of the multiferroic BiFeO3–Bi4Ti3O12 composite system. More specifically an aqueous solution-gel plus spin-coating methodology is employed which also avoids the organic solvents typically used in a conventional sol–gel method, so further keeping an eye on the environmentally friendly conditions. Attempts are conducted that demonstrate how by systematically controlling the processing parameters it is possible to obtain thin film composites with a promising 3-3 type connectivity at temperatures as low as 600 °C.

Thin film composites in the BiFeO3–Bi4Ti3O12 system obtained by an aqueous solution-gel deposition methodology

International Nuclear Information System (INIS)

Gumiel, C.; Vranken, T.; Bernardo, M.S.; Jardiel, T.; Hardy, A.; Van Bael, M.K.; Peiteado, M.

2018-01-01

Thin film multiferroic composites, with a high quantity of interfaces between the different materials, represent a more feasible alternative to single phase systems in which the multifunctional response is usually hampered due to intrinsic physical constraints. Nowadays some of these composites can be produced by applying deposition techniques such as PLD, CVD, MBE or the like, which allow a high degree of crystallographic control. However, despite their effectiveness, all these techniques also involve a high consumption of energy in terms of temperature and/or vacuum. Within this frame, the present contribution proposes a sustainable chemical solution deposition process to prepare thin films of the multiferroic BiFeO3–Bi4Ti3O12 composite system. More specifically an aqueous solution-gel plus spin-coating methodology is employed which also avoids the organic solvents typically used in a conventional sol–gel method, so further keeping an eye on the environmentally friendly conditions. Attempts are conducted that demonstrate how by systematically controlling the processing parameters it is possible to obtain thin film composites with a promising 3-3 type connectivity at temperatures as low as 600°C. [es

Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO3 thin films

International Nuclear Information System (INIS)

Habib, Zubida; Ikram, Mohd; Mir, Sajad A.; Sultan, Khalid; Abida; Majid, Kowsar; Asokan, K.

2017-01-01

Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO 3 thin films grown by pulsed laser deposition on LaAlO 3 substrates. Electronic excitations were induced by 200 MeV Ag 12+ ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe 1-x Ni x O 3 (x = 0.1 and 0.3) films compared to HoFeO 3 film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

Improved photoelectrochemical performance of BiVO4/MoO3 heterostructure thin films

Science.gov (United States)

Kodan, Nisha; Mehta, B. R.

2018-05-01

Bismuth vanadate (BiVO4) and Molybdenum trioxide (MoO3) thin films have been prepared by RF sputtering technique. BiVO4 thin films were deposited on indium doped tin oxide (In: SnO2; ITO) substrates at room temperature and 80W applied rf power. The prepared BiVO4 thin films were further annealed at 450°C for 2 hours in air to obtain crystalline monoclinic phase and successively coated with MoO3 thin films deposited at 150W rf power and 400°C for 30 minutes. The effect of coupling BiVO4 and MoO3 on the structural, optical and photoelectrochemical (PEC) properties have been studied. Optical studies reveal that coupling of BiVO4 and MoO3 results in improvement of optical absorption in visible region of solar spectrum. PEC study shows approximate 3-fold and 38-fold increment in photocurrent values of BiVO4/MoO3 (0.38 mA/cm2) heterostructure thin film as compared to MoO3 (0.15 mA/cm2) and BiVO4 (10 µA/cm2) thin films at applied bias of 1 V vs Ag/AgCl in 0.5 M Na2SO4 (pH=7) electrolyte.

Magnetron-sputter deposition of Fe3S4 thin films and their conversion into pyrite (FeS2) by thermal sulfurization for photovoltaic applications

International Nuclear Information System (INIS)

Liu Hongfei; Chi Dongzhi

2012-01-01

The authors report on the fabrication of FeS 2 (pyrite) thin films by sulfurizing Fe 3 S 4 that were deposited by direct current magnetron sputtering at room temperature. Under the selected sputtering conditions, Fe 3 S 4 nanocrystal films are obtained and the nanocrystals tend to locally cluster and closely pack into ricelike nanoparticles with an increase in film thickness. Meanwhile, the film tends to crack when the film thickness is increased over ∼1.3 μm. The film cracking can be effectively suppressed by an introduction of a 3-nm Cu intermediate layer prior to Fe 3 S 4 deposition. However, an introduction of a 3-nm Al intermediate layer tends to enhance the film cracking. By post-growth thermal sulfurization of the Fe 3 S 4 thin films in a tube-furnace, FeS 2 with high phase purity, as determined by using x ray diffraction, is obtained. Optical absorption spectroscopy was employed to characterize the resultant FeS 2 thin films, which revealed two absorption edges at 0.9 and 1.2 eV, respectively. These two absorption edges are assigned to the direct bandgap (0.9 eV) and the indirect allowed transitions (1.2 eV) of FeS 2 , respectively.

Liquid flow deposited spinel (Ni,Mn){sub 3}O{sub 4} thin films for microbolometer applications

Energy Technology Data Exchange (ETDEWEB)

Le, Duc Thang, E-mail: ducthang36@skku.edu [Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jeon, Chang Jun; Lee, Kui Woong; Jeong, Young Hun; Yun, Ji Sun [Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of); Yoon, Dae Ho, E-mail: dhyoon@skku.edu [School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, Jeong Ho, E-mail: goedc@kicet.re.kr [Intelligent Electronic Component Team, Electronic Materials Convergence Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801 (Korea, Republic of)

2015-03-01

Highlights: • Highly quality (Ni,Mn){sub 3}O{sub 4} thin films were grown using liquid flow deposited (LFD) technique. • It is possible to deposit multi–component manganite–oxide thin films by LFD at low temperatures. • Nickel–manganite films showed a good negative temperature coefficient (NTC) characteristic. • Liquid flow deposited (Ni,Mn){sub 3}O{sub 4} thin films are very potential for microbolometer applications. - Abstract: A liquid flow deposition (LFD) technique was initially used for the fabrication of single-component Mn{sub 3}O{sub 4} thin films onto Si wafer substrates at a range of substrate temperatures of 30–80 °C, with the introduction of an oxidizing reagent (H{sub 2}O{sub 2}). As a result, solid thin films were well formed from an aqueous solution. An X-ray diffraction (XRD) analysis showed typical characteristics of hausmannite Mn{sub 3}O{sub 4} with a spinel tetragonal phase. Field-emission scanning electron microscopy (FE-SEM) observations revealed nano-sized grains arranged uniformly on a dense and smooth surface for all of the as-deposited films. On the other hand, the LFD method was then extended to prepare two-component nickel–manganite films according to the binary chemical composition of Ni{sub x}Mn{sub 3−x}O{sub 4} with x = 0.02–0.2. The as-grown nickel–manganite films showed a surface with a good quality with a spherical bead-like architecture when x ≤ 0.10, while a conversion from spherical grains into highly porous nanowalls in the microstructure was noted in films when x ≥ 0.12. These results signify that it is possible to fabricate various multi-component manganite-oxide thin films at a low temperature. In addition, the dependences of the room-temperature electrical resistivity (ρ) and the temperature coefficient of resistance (TCR) on the Ni substitution level (x) were investigated on films annealed at 400 °C.

Quasicubic α-Fe{sub 2}O{sub 3} nanoparticles embedded in TiO{sub 2} thin films grown by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tamm, Aile [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu (Estonia); Seinberg, Liis [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Kozlova, Jekaterina [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu (Estonia); Link, Joosep [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Pikma, Piret [University of Tartu, Institute of Chemistry, Ravila 14A, 50411 Tartu (Estonia); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn (Estonia); Kukli, Kaupo [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu (Estonia); Department of Chemistry, University of Helsinki, P.O. Box 55, FI-00014 Helsinki (Finland)

2016-08-01

Monodispersed quasicubic α-Fe{sub 2}O{sub 3} nanoparticles were synthesized from ferric nitrite (Fe(NO{sub 3}){sub 3}), N,N-dimethyl formamide and poly(N-vinyl-2-pyrrolidone). Layers of nanoparticles were attached to HF-etched Si substrates by dip coating and subsequently embedded in thin titanium oxide films grown by atomic layer deposition from TiCl{sub 4} and H{sub 2}O. The deposition of TiO{sub 2} onto Fe{sub 2}O{sub 3} nanoparticles covered the nanoparticles uniformly and anatase phase of TiO{sub 2} was observed in Si/Fe{sub 2}O{sub 3}/TiO{sub 2} nanostructures. In Si/Fe{sub 2}O{sub 3}/TiO{sub 2} nanostructure magnetic domains, observable by magnetic force microscopy, were formed and these nanostructures implied ferromagnetic-like behavior at room temperature with the saturative magnetization and coercivity of 10 kA/m. - Highlights: • Cubic-shaped iron oxide crystallites were supported by thin titanium oxide films. • The process chemistry applied allowed formation of heterogeneous composite. • Atomic layer deposition of titanium oxide on nanocubes was uniform and conformal. • The nanostructures formed can be regarded as magnetically susceptible materials.

Synthesis of nanocrystalline nickel-zinc ferrite (Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4}) thin films by chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Pawar, D.K. [Department of Chemistry, Shivaji University, Kolhapur 416 004 (M.S.) (India); Pawar, S.M. [Department of Materials Science and Engineering, Chonnam National University, 500 757 (Korea, Republic of); Patil, P.S. [Department of Physics, Shivaji University, Kolhapur 416 004 (M.S.) (India); Kolekar, S.S., E-mail: kolekarss2003@yahoo.co.in [Department of Chemistry, Shivaji University, Kolhapur 416 004 (M.S.) (India)

2011-02-24

Graphical abstract: Display Omitted Research highlights: > We have successfully synthesized nickel-zinc ferrite (Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4}) thin films on stainless steel substrates using a low temperature chemical bath deposition method. > The surface morphological study showed the compact flakes like morphology. > The as-deposited thin films are hydrophilic (10{sup o} < {theta} < 90{sup o}) whereas the annealed thin films are super hydrophilic ({theta} < 10{sup o}) in nature. > Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} thin films could be used in supercapacitor. - Abstract: The nickel-zinc ferrite (Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4}) thin films have been successfully deposited on stainless steel substrates using a chemical bath deposition method from alkaline bath. The films were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), static water contact angle and cyclic voltammetry measurements. The X-ray diffraction pattern shows that deposited Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} thin films were oriented along (3 1 1) plane. The FTIR spectra showed strong absorption peaks around 600 cm{sup -1} which are typical for cubic spinel crystal structure. SEM study revealed compact flakes like morphology having thickness {approx}1.8 {mu}m after air annealing. The annealed films were super hydrophilic in nature having a static water contact angle ({theta}) of 5{sup o}.The electrochemical supercapacitor study of Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} thin films has been carried out in 6 M KOH electrolyte. The values of interfacial and specific capacitances obtained were 0.0285 F cm{sup -2} and 19 F g{sup -1}, respectively.

Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

International Nuclear Information System (INIS)

Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

2009-01-01

FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe 50 Co 50 alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal

Direct growth of superconducting NdFeAs(O,F) thin films by MBE

Energy Technology Data Exchange (ETDEWEB)

Chihara, Masashi, E-mail: chihara@iku.xtal.nagoya-u.ac.jp [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Sumiya, Naoki; Arai, Kenta [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, Yokosuka-shi, Kanagawa 240-0101 (Japan); Hatano, Takafumi; Iida, Kazumasa; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-11-15

Highlights: • Highly textured NdFeAs(O,F) thin films were obtained by a direct growth method. • Enhancing the migration was crucial to realize the direct growth. • The critical current density exceeded 3 MA/cm{sup 2} at self-field and 1 MA/cm{sup 2} at 9 T. • A two-dimensional growth was confirmed by the observation of surface morphology. - Abstract: We report on the growth of NdFeAs(O,F) superconducting thin films by molecular beam epitaxy without having a NdOF secondary layer that was necessary for fluorine doping in our previous studies. The key to realizing the direct growth of a superconducting film was the enhancement of migration of the raw materials on the substrate, which was accomplished by two steps. Firstly, we increased the growth temperature that improved the crystalline quality of parent NdFeAsO thin films. Secondly, the atmosphere in the chamber during the growth was improved by changing the crucible material of the Fe source cell. Highly textured NdFeAs(O,F) thin films with critical temperatures up to 50 K were obtained, and terraces were observed by atomic force microscope, indicating a two-dimensional growth. However, precipitates were also found on the surface, which suggests that enhancing further the migration is necessary for obtaining a NdFeAs(O,F) thin film with a better quality.

Orthorhombic polar Nd-doped BiFeO{sub 3} thin film on MgO substrate

Energy Technology Data Exchange (ETDEWEB)

Leontyev, I N; Janolin, P-E; Dkhil, B [Laboratoire Structures, Proprietes et Modelisation des Solides, UMR CNRS-Ecole Centrale Paris, 92295 Chatenay-Malabry Cedex (France); Yuzyuk, Yu I [Faculty of Physics, Southern Federal University, Zorge 5, Rostov-on-Don 344090 (Russian Federation); El-Marssi, M [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens (France); Chernyshov, D; Dmitriev, V [Swiss-Norwegian Beam Lines at ESRF, Boite Postale 220, F-38043 Grenoble (France); Golovko, Yu I; Mukhortov, V M, E-mail: i.leontiev@rambler.ru [Southern Scientific Center RAS, Rostov-on-Don, 344006 (Russian Federation)

2011-08-24

A Nd-doped BiFeO{sub 3} thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45{sup 0} with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism. (fast track communication)

Third generation biosensing matrix based on Fe-implanted ZnO thin film

Science.gov (United States)

Saha, Shibu; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

2010-09-01

Third generation biosensor based on Fe-implanted ZnO (Fe-ZnO) thin film has been demonstrated. Implantation of Fe in rf-sputtered ZnO thin film introduces redox center along with shallow donor level and thereby enhance its electron transfer property. Glucose oxidase (GOx), chosen as model enzyme, has been immobilized on the surface of the matrix. Cyclic voltammetry and photometric assay show that the prepared bioelectrode, GOx/Fe-ZnO/ITO/Glass is sensitive to the glucose concentration with enhanced response of 0.326 μA mM-1 cm-2 and low Km of 2.76 mM. The results show promising application of Fe-implanted ZnO thin film as an attractive matrix for third generation biosensing.

Third generation biosensing matrix based on Fe-implanted ZnO thin film

International Nuclear Information System (INIS)

Saha, Shibu; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

2010-01-01

Third generation biosensor based on Fe-implanted ZnO (Fe-ZnO) thin film has been demonstrated. Implantation of Fe in rf-sputtered ZnO thin film introduces redox center along with shallow donor level and thereby enhance its electron transfer property. Glucose oxidase (GOx), chosen as model enzyme, has been immobilized on the surface of the matrix. Cyclic voltammetry and photometric assay show that the prepared bioelectrode, GOx/Fe-ZnO/ITO/Glass is sensitive to the glucose concentration with enhanced response of 0.326 μA mM -1 cm -2 and low Km of 2.76 mM. The results show promising application of Fe-implanted ZnO thin film as an attractive matrix for third generation biosensing.

Magnetic anisotropies in epitaxial Fe3O4/GaAs(100) patterned structures

International Nuclear Information System (INIS)

Zhang, W.; Zhang, D.; Yuan, S. J.; Huang, Z. C.; Zhai, Y.; Wong, P. K. J.; Wu, J.; Xu, Y. B.

2014-01-01

Previous studies on epitaxial Fe 3 O 4 rings in the context of spin-transfer torque effect have revealed complicated and undesirable domain structures, attributed to the intrinsic fourfold magnetocrystalline anisotropy in the ferrite. In this Letter, we report a viable solution to this problem, utilizing a 6-nm-thick epitaxial Fe 3 O 4 thin film on GaAs(100), where the fourfold magnetocrystalline anisotropy is negligible. We demonstrate that in the Fe 3 O 4 planar wires patterned from our thin film, such a unique magnetic anisotropy system has been preserved, and relatively simple magnetic domain configurations compared to those previous reports can be obtained

Preparation of Nd-doped BiFeO{sub 3} films and their electrical properties

Energy Technology Data Exchange (ETDEWEB)

Cheng Meng [Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi' an 710021 (China); Tan Guoqiang, E-mail: tan3114@163.com [Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi' an 710021 (China); Xue Xu; Xia Ao; Ren Huijun [Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi' an 710021 (China)

2012-09-01

The Nd-doped BiFeO{sub 3} thin films were prepared on SnO{sub 2}(FTO) substrates spin-coated by the sol-gel method using Nd(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O, Fe(NO{sub 3}){sub 3}{center_dot}9H{sub 2}O and Bi(NO{sub 3}){sub 3}{center_dot}5H{sub 2}O as raw materials. The microstructure and electric properties of the BiFeO{sub 3} thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO{sub 3} films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi{sub 0.85}Nd{sub 0.15}FeO{sub 3} films gives rise to the largest Pr of 64 {mu}C/cm{sup 2}. The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi{sub 0.85}Nd{sub 0.15}FeO{sub 3} thin film at 10 kHz are 190 and 0.017 respectively.

Modified voltammetric, impedimetric and optical behavior of polymer- assisted sol-gel MgFe2O4 nanostructured thin films

International Nuclear Information System (INIS)

Bazhan, Z.; Ghodsi, F.E.; Mazloom, J.

2017-01-01

Highlights: •Electrochemical properties of spinel PEG/PVP MgFe 2 O 4 thin films prepared by spin coating technique have been investigated. •PSD analysis indicated that spectral roughness of films decreased by polymer incorporation. •Optical calculations exhibited a blue shift on optical band gap by polymer addition. •CV curves revealed that ion storage capacitance of PEG/MgFe 2 O 4 is two times higher than MgFe 2 O 4 thin films. •EIS analysis confirmed that incorporation of appropriate amount of PEG reduced the charge transfer resistance. -- Abstract: The effect of polyethylene glycol (PEG) and polyvinylpyrrolidone (PVP) on physical properties of sol-gel prepared magnesium ferrite (MF) thin films was investigated. The X-ray diffraction (XRD) results showed the formation of cubic spinel magnesium ferrite for all samples. The surface morphology of films changed and average surface roughness decreased by polymer addition. The height-height correlation function and fractal dimension were evaluated using cube counting and triangulation methods from atomic force microscopy (AFM) images. The refractive index and extinction coefficient of MF thin films decreased by adding polymer while the band gap value increased from 2.24 to 2.72 eV. The PEG addition enhanced the electrochemical performance while PVP addition didn’t have significant effect on cyclic voltammetry (CV) of magnesium ferrite thin films. The sample with highest value of PEG showed the maximum specific capacitance (68.5 mF cm −2 ) and the smallest charge transfer resistance (565 Ω) among all samples.

Graphene derivatives/Fe_3O_4/polymer nanocomposite films: Optical and electrical properties

International Nuclear Information System (INIS)

Hatel, Rhizlane; Goumri, Meryem; Ratier, Bernard; Baitoul, Mimouna

2017-01-01

This paper reports a simple solution casting method for the preparation of nanocomposite films in which graphene oxide (GO)/Fe_3O_4 nanocomposites are incorporated into poly (vinyl alcohol) (PVA) matrix. The films obtained with different weight percent of GO/Fe_3O_4 (0.5, 0.7 and 1 wt%) are subjected an in situ chemical and thermal reduction in order to explore the evolution and interactions between these components under different treatments and get an insight into on how this can affects the optical and electrical properties of these nanocomposites. Characterization was carried out using, UV–Vis absorption, Photoluminescence, electrical conductivity measurements, Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy. Strong covalent functionalization occurs between the polymer and graphene derivatives (GD)/Fe_3O_4 hybrids. The experimental results obtained for our nanocomposites films exhibit significant enhancement in properties highlighted the efficiency of the in situ thermal reduction. The high absorption with strong photoluminescence and electrical conductivity achieved might promote these nanocomposites for opto-electronic devices in near future. - Highlights: • Novel inorganic-organic hybrid flexible films were successfully prepared. • Good interfacial interaction between the graphene/Fe_3O_4 and the hydroxyl-rich PVA. • Optical and electrical properties of Graphene Derivatives/Fe_3O_4/PVA were investigated. • Thermally reduced GO/Fe_3O_4/PVA films show high absorption and strong photoluminescence.

Electronic excitation-induced structural, optical, and magnetic properties of Ni-doped HoFeO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Habib, Zubida [National Institute of Technology, Department of Chemistry, Srinagar (India); National Institute of Technology, Department of Physics, Srinagar (India); Ikram, Mohd; Mir, Sajad A. [National Institute of Technology, Department of Physics, Srinagar (India); Sultan, Khalid [Central University of Kashmir, Department of Physics, Srinagar (India); Abida [Govt Degree College for Women, Department of Physics, Anantnag, Kashmir (India); Majid, Kowsar [National Institute of Technology, Department of Chemistry, Srinagar (India); Asokan, K. [Inter University Accelerator Centre, New Delhi (India)

2017-06-15

Present study investigates the electronic excitation-induced modifications in the structural, optical, and magnetic properties of Ni-doped HoFeO{sub 3} thin films grown by pulsed laser deposition on LaAlO{sub 3} substrates. Electronic excitations were induced by 200 MeV Ag{sup 12+} ion beam. These thin films were then characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectroscopy, and magnetic measurements. X-ray diffraction analysis confirms that the crystallite growth occurs in the preferred (111) orientation with orthorhombic structure. The XRD results also show that the crystallite size decreases with ion irradiation. AFM results after irradiation show significant changes in the surface roughness and morphology of these films. The optical parameters measured from absorption measurements reveal reduction in the band gap with Ni doping and enhancement of band gap after irradiation. The magnetization vs field measurement at 75 K shows enhancement in saturation magnetization after irradiation for HoFe{sub 1-x}Ni{sub x}O{sub 3} (x = 0.1 and 0.3) films compared to HoFeO{sub 3} film. Present study shows electronic excitation induces significant changes in the physical properties of these films. (orig.)

Understanding Strain-Induced Phase Transformations in BiFeO3 Thin Films.

Science.gov (United States)

Dixit, Hemant; Beekman, Christianne; Schlepütz, Christian M; Siemons, Wolter; Yang, Yongsoo; Senabulya, Nancy; Clarke, Roy; Chi, Miaofang; Christen, Hans M; Cooper, Valentino R

2015-08-01

Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO 3 thin films, which comprises a tetragonal-like ( T ') and an intermediate S ' polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T ' phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S ' phase is energetically very close to the T ' phase, but is structurally similar to the bulk rhombohedral ( R ) phase. By fully characterizing the intermediate S ' polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T ' and S ' phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S ' and T ' polymorphs, which have very different octahedral rotation patterns and c / a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO 3 films. Additionally, a blueshift in the band gap when moving from R to S ' to T ' is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

Evidence of Room Temperature Ferromagnetism Due to Oxygen Vacancies in (In1- x Fe x )2O3 Thin Films

Science.gov (United States)

Chakraborty, Deepannita; Munuswamy, Kuppan; Shaik, Kaleemulla; Nasina, Madhusudhana Rao; Dugasani, Sreekantha Reddy; Inturu, Omkaram

2018-03-01

Iron substituted indium oxide (In1- x Fe x )2O3 thin films at x = 0.00, 0.03, 0.05 and 0.07 were coated onto Corning 7059 glass substrates using the electron beam evaporation technique followed by annealing at different temperatures. The prepared thin films were subjected to different characterization techniques to study their structural, optical and magnetic properties. The structural properties of the thin films were studied using x-ray diffractometry (XRD). From the XRD results it was found that the films were crystallized in cubic structure, and no change in crystal structure was observed with annealing temperature. No secondary phases related to iron were observed from the XRD profiles. The chemical composition and surface morphology of the films were examined by field emission scanning electron microscope (FE-SEM) attached with energy dispersive analysis of x-ray (EDAX). The valence state of the elements were studied by x-ray photoelectron spectroscopy (XPS) and found that the indium, iron and oxygen were in In+3, Fe+3 and O-2 states. From the data, the band gap of the (In1- x Fe x )2O3 thin films were calculated and it increased with increase of annealing temperature. The magnetic properties of the films were studied at room temperature by vibrating sample magnetometer (VSM). The films exhibited ferromagnetism at room temperature.

Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1−xRuO3-buffered SrTiO3 substrates

KAUST Repository

Yao, Yingbang

2012-06-01

(001)-oriented BiFeO 3 (BFO) thin films were grown on Sr xCa 1-xRuO 3- (SCRO; x = 1, 0.67, 0.33, 0) buffered SrTiO 3 (001) substrates using pulsed laser deposition. The microstructural, electrical, ferroelectric, and piezoelectric properties of the thin films were considerably affected by the buffer layers. The interface between the BFO films and the SCRO-buffer layer was found to play a dominant role in determining the electrical and piezoelectric behaviors of the films. We found that films grown on SrRuO 3-buffer layers exhibited minimal electrical leakage while films grown on Sr 0.33Ca 0.67RuO 3-buffer layers had the largest piezoelectric response. The origin of this difference is discussed. © 2012 American Institute of Physics.

Photoelectrochemical Characterization of Sprayed α-Fe2O3 Thin Films: Influence of Si Doping and SnO2 Interfacial Layer

Directory of Open Access Journals (Sweden)

Yongqi Liang

2008-01-01

Full Text Available α-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc3. The donor density in the Fe2O3 films could be tuned between 1017–1020 cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting substrates, both the reproducibility and the photocurrent can be enhanced. The effects of Si doping and the presence of the SnO2 interfacial layer were systematically studied. The highest photoresponse is obtained for Fe2O3 doped with 0.2% Si, resulting in a photocurrent of 0.37 mA/cm2 at 1.23 VRHE in a 1.0 M KOH solution under 80 mW/cm2 AM1.5 illumination.

First report on synthesis of ZnFe_2O_4 thin film using successive ionic layer adsorption and reaction: Approach towards solid-state symmetric supercapacitor device

International Nuclear Information System (INIS)

Raut, Shrikant S.; Sankapal, Babasaheb R.

2016-01-01

Highlights: • First report on synthesis of ZnFe_2O_4 thin film using SILAR method. • ZnFe_2O_4 electrode yields the specific capacitance of 471 Fg"−"1 at a scan rate of 5 mV s"−"1 in 1 M NaOH aqueous solution. • Solid-state symmetric supercapacitor device based on ZnFe_2O_4 sandwiched in polyvinyl alcohol (PVA)–LiClO_4 gel electrolyte exhibits voltage windows of 1.0 V. • ZnFe_2O_4-SSS supercapacitor device shows good energy and power density with long cycle life. - Abstract: ZnFe_2O_4 thin film has been synthesized by a simple and low cost successive ionic layer adsorption and reaction (SILAR) method without the use of surfactant or template. The nanoplate composed of nanoparticles with porous surface morphology has been revealed which is beneficial towards supercapacitor application. Formed ZnFe_2O_4 thin film has been tested as an electrode material for supercapacitor through electrochemical analysis. First attempt for SILAR synthesized ZnFe_2O_4 thin film exhibited a specific capacitance of 471 Fg"−"1 at a scan rate of 5 mVs"−"1 in 1 M NaOH aqueous solution. Further, ZnFe_2O_4 solid-state symmetric (SSS) supercapacitor device demonstrated voltage window of 1.0 V with specific capacitance of 32 Fg"−"1, energy density of 4.47 Whkg"−"1 and power density of 277 Wkg"−"1 at 1 Ag"−"1 current density. Such high performance capacitive behavior indicates ZnFe_2O_4 thin film is promising and low cost electrode material towards energy storage devices for various portable electronic systems.

Pulsed-laser deposition and growth studies of Bi3Fe5O12 thin films

International Nuclear Information System (INIS)

Lux, Robert; Heinrich, Andreas; Leitenmeier, Stephan; Koerner, Timo; Herbort, Michael; Stritzker, Bernd

2006-01-01

Magneto-optical garnets are attractive because of their high Faraday rotation and low optical loss in the near infrared. Therefore their use is generally in nonreciprocal devices, i.e., as optical isolators in optical communication. In this paper we present data concerning the deposition of Bi 3 Fe 5 O 12 (BIG) thin films on (100) and (111) Gd 3 Ga 5 O 12 substrates using pulsed-laser deposition. Laser-induced processes on the surface of the oxide target used for ablation were analyzed and numerous films were deposited. We found the BIG film quality to be strongly affected by oxygen pressure, laser energy density, and the Bi/Fe film ratio, whereas temperature had a minor influence. We also investigated the BIG-film deposition using a target pressed from metallic Bi and Fe powders and found information on the growth behavior of BIG. We report on details of the film deposition and film properties determined by environmental scanning electron microscopy, energy dispersive x-ray analysis, Rutherford backscattering spectroscopy, and x-ray diffraction. In addition, we determined the Faraday rotation of the films

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

Science.gov (United States)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Structural and magnetic anisotropy in the epitaxial FeV2O4 (110) spinel thin films

Science.gov (United States)

Shi, Xiaolan; Wang, Yuhang; Zhao, Kehan; Liu, Na; Sun, Gaofeng; Zhang, Liuwan

2015-11-01

The epitaxial 200-nm-thick FeV2O4(110) films on (110)-oriented SrTiO3, LaAlO3 and MgAl2O4 substrates were fabricated for the first time by pulsed laser deposition, and the structural, magnetic, and magnetoresistance anisotropy were investigated systematically. All the films are monoclinic, whereas its bulk is cubic. Compared to FeV2O4 single crystals, films on SrTiO3 and MgAl2O4 are strongly compressively strained in [001] direction, while slightly tensily strained along normal [110] and in-plane [ 1 1 ¯ 0 ] directions. In contrast, films on LaAlO3 are only slightly distorted from cubic. The magnetic hard axis is in direction, while the easier axis is along normal [110] direction for films on SrTiO3 and MgAl2O4, and in-plane [ 1 1 ¯ 0 ] direction for films on LaAlO3. Magnetoresistance anisotropy follows the magnetization. The magnetic anisotropy is dominated by the magnetocrystalline energy, and tuned by the magneto-elastic coupling.

Optical Properties of Fe3O4 Thin Films Prepared from the Iron Sand by Spin Coating Method

Science.gov (United States)

Yulfriska, N.; Rianto, D.; Murti, F.; Darvina, Y.; Ramli, R.

2018-04-01

Research on magnetic oxide is growing very rapidly. This magnetic oxide can be found in nature that is in iron sand. One of the beaches in Sumatera Barat containing iron sand is Tiram Beach, Padang Pariaman District, Sumatera Barat. The content of iron sand is generally in the form of magnetic minerals such as magnetite, hematite, and maghemit. Magnetite has superior properties that can be developed into thin films. The purpose of this research is to investigate the optical properties of transmittance, absorbance, reflectance and energy gap from Fe3O4 thin films. This type of research is an experimental research. The iron sand obtained from nature is first purified using a permanent magnet, then made in nanoparticle size using HEM-E3D with milling time for 30 hours. After that, the process of making thin film with sol-gel spin coating method. In this research, variation of rotation speed from spin coating is 1000 rpm, 2000 rpm and 3000 rpm. Based on XRD results indicated that the iron sand of Tiram beach contains magnetite minerals and the SEM results show that the thickness of the thin films formed is 25μm, 24μm and 11μm. The characterization tool used for characterizing optical properties is the UV-VIS Spectrophotometer. So it can be concluded that the greater the speed of rotation the thickness of the thin layer will be smaller, resulting in the transmittance and reflectance will be greater, while the absorbance will be smaller. Energy gap obtained from this research is 3,75eV, 3,75eV and 3,74eV. So the average energy gap obtained is 3,75eV.

Structure and electrical properties of (La, Zn) Co-doped BiFeO3 thin films prepared by using chemical solution deposition

Science.gov (United States)

Kim, Y. J.; Kim, H. J.; Kim, J. W.; Raghavan, C. M.; Kim, S. S.

2012-08-01

We prepared pure BiFeO3 (BFO) and (Bi0.9La0.1)(Fe0.975Zn0.025)O3- δ (BLFZO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BLFZO thin film. The leakage current density of the BLFZO thin film was four orders of magnitude lower than that of the pure BFO, 4.17 × 10-7 A/cm2 at 100 kV/cm. The remnant polarization (2 P r ) and the coercive electric field (2 E c ) of the BLFZO thin film were 97 µC/cm2 and 903 kV/cm at an applied electric field of 972 kV/cm and at a frequency of 1 kHz, and the values decreased with increasing measurement frequency to 63 µC/cm2 and 679 kV/cm at 10 kHz, respectively. Also, after 1.44 × 1010 cycles, a better fatigue endurance was observed in the BLFZO thin film, which was 90% of its initial value. We also confirmed that the remnant polarization (2 P r ) and the coercive electric field (2 E c ) were fairly saturated above a measurement frequency of 15 kHz for the BLFZO thin film.

Magnetic and magneto-optical characteristics of spin coated Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} thin films on Pt (1 1 1) coated Si substrate

Energy Technology Data Exchange (ETDEWEB)

Gupta, Arti, E-mail: artigupta80@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi110007 (India); Dutta, Shankar [Solid State Physics Laboratory, DRDO, Lucknow Road, Timarpur, Delhi110054 (India); Tandon, Ram Pal [Department of Physics and Astrophysics, University of Delhi, Delhi110007 (India)

2016-05-15

Highlights: • Properties of Co{sub 0.6}Zn{sub 0.4}Mn{sub 0.3}Fe{sub 1.7}O{sub 4} thin films on Pt-Si substrate are reported. • Reduction in thickness ∼27% with increased annealing temperature was found. • Partial (3 3 3) plane textured orientation was noted for these films. - Abstract: This paper reports magnetic and magneto-optical properties of Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} nanocrystalline thin films (thickness ∼140–200 nm) deposited on Pt (1 1 1)/Ti/SiO{sub 2}/Si substrates by spin coating technique. Deposited films are then annealed at 600 °C and 700 °C for 60 min (significant reduction in film thickness from 200 nm to 140 nm was noted with the increase in post deposition annealing temperature). The X ray diffraction patterns confirmed the spinel cubic structure of Co{sub 0.6}Zn{sub 0.4}Fe{sub 1.7}Mn{sub 0.3}O{sub 4} films with polycrystalline phase and also indicated a partial <3 3 3> texture orientation. Deposited films showed magnetic anisotropy as evidenced from magnetic and magneto-optical measurements. Higher in plane remnant magnetization and low coercivity values as compared to out of plane ones were observed for both samples, indicating in plane alignment of easy axis of magnetization.

Enhanced magnetic properties of chemical solution deposited BiFeO3 thin film with ZnO buffer layer

International Nuclear Information System (INIS)

Rajalakshmi, R.; Kambhala, Nagaiah; Angappane, S.

2012-01-01

Highlights: ► Enhanced magnetization of BiFeO 3 is important for strong magnetoelectric coupling. ► BiFeO 3 film with ZnO buffer layer was successfully synthesized by chemical method. ► Magnetization of BiFeO 3 has increased by more than 10 times with ZnO buffer layer. ► A mechanism for enhancement in ferromagnetism of BiFeO 3 film is proposed. - Abstract: Magnetic properties of BiFeO 3 films deposited on Si substrates with and without ZnO buffer layer have been studied in this work. We adopted the chemical solution deposition method for the deposition of BiFeO 3 as well as ZnO films. The x-ray diffraction measurements on the deposited films confirm the formation of crystalline phase of BiFeO 3 and ZnO films, while our electron microscopy measurements help to understand the morphology of few micrometers thick films. It is found that the deposited ZnO film exhibit a hexagonal particulate surface morphology, whereas BiFeO 3 film fully covers the ZnO surface. Our magnetic measurements reveal that the magnetization of BiFeO 3 has increased by more than ten times in BiFeO 3 /ZnO/Si film compared to BiFeO 3 /Si film, indicating the major role played by ZnO buffer layer in enhancing the magnetic properties of BiFeO 3 , a technologically important multiferroic material.

Growth and surface modification of LaFeO3 thin films induced by reductive annealing

International Nuclear Information System (INIS)

Flynn, Brendan T.; Zhang, Kelvin H.L.; Shutthanandan, Vaithiyalingam; Varga, Tamas; Colby, Robert J.; Oleksak, Richard P.; Manandhar, Sandeep; Engelhard, Mark H.; Chambers, Scott A.; Henderson, Michael A.; Herman, Gregory S.; Thevuthasan, Suntharampillai

2015-01-01

Highlights: • LaFeO 3 was grown by molecular beam epitaxy on ZrO 2 :Y 2 O 3 . • The film was highly oriented but not single crystalline. • Angle resolved XPS revealed differences between surface and bulk oxygen. • Annealing the film in vacuum resulted in the sequential reduction of Fe cations. • A greater degree of Fe reduction was found at the surface. - Abstract: The mixed electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO 3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) demonstrated that the film is primarily textured in the [1 0 0] direction and is stoichiometric. High-resolution transmission electron microscopy measurements show regions that are dominated by [1 0 0] oriented LFO grains that are oriented with respect to the substrates lattice. However, selected regions of the film show multiple domains of grains that are not [1 0 0] oriented. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved X-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of LFO materials for catalytic applications

Unraveling the magnetic properties of BiFe0.5Cr0.5O3 thin films

Directory of Open Access Journals (Sweden)

G. Vinai

2015-11-01

Full Text Available We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3 (BFCO thin films grown on (001 (110 and (111 oriented SrTiO3 (STO substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

Science.gov (United States)

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-04-28

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe(2+) and Fe(3+) are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.

Enhanced photoelectrocatalytic performance of α-Fe2O3 thin films by surface plasmon resonance of Au nanoparticles coupled with surface passivation by atom layer deposition of Al2O3.

Science.gov (United States)

Liu, Yuting; Xu, Zhen; Yin, Min; Fan, Haowen; Cheng, Weijie; Lu, Linfeng; Song, Ye; Ma, Jing; Zhu, Xufei

2015-12-01

The short lifetime of photogenerated charge carriers of hematite (α-Fe2O3) thin films strongly hindered the PEC performances. Herein, α-Fe2O3 thin films with surface nanowire were synthesized by electrodeposition and post annealing method for photoelectrocatalytic (PEC) water splitting. The thickness of the α-Fe2O3 films can be precisely controlled by adjusting the duration of the electrodeposition. The Au nanoparticles (NPs) and Al2O3 shell by atom layer deposition were further introduced to modify the photoelectrodes. Different constructions were made with different deposition orders of Au and Al2O3 on Fe2O3 films. The Fe2O3-Au-Al2O3 construction shows the best PEC performance with 1.78 times enhancement by localized surface plasmon resonance (LSPR) of NPs in conjunction with surface passivation of Al2O3 shells. Numerical simulation was carried out to investigate the promotion mechanisms. The high PEC performance for Fe2O3-Au-Al2O3 construction electrode could be attributed to the Al2O3 intensified LSPR, effective surface passivation by Al2O3 coating, and the efficient charge transfer due to the Fe2O3-Au Schottky junctions.

Kinetics and intermediate phases in epitaxial growth of Fe{sub 3}O{sub 4} films from deposition and thermal reduction

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiaozhe [School of Science, MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049, ShaanXi (China); Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Yang, Sen; Yang, Zhimao, E-mail: zmyang@xjtu.edu.cn, E-mail: xiaoshan.xu@unl.edu [School of Science, MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049, ShaanXi (China); Xu, Xiaoshan, E-mail: zmyang@xjtu.edu.cn, E-mail: xiaoshan.xu@unl.edu [Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)

2016-08-28

We have studied the kinetics of the transitions between the Fe{sub 2}O{sub 3} and Fe{sub 3}O{sub 4} phases as thin epilayers (∼2.5 nm) on Al{sub 2}O{sub 3} (001) substrates using time-resolved reflection high energy electron diffraction. The different iron oxide phases were identified using a combination of in-situ and ex-situ characterizations. The transition from an α-Fe{sub 2}O{sub 3} (001) epilayer to a Fe{sub 3}O{sub 4} (111) epilayer through thermal reduction was found to be determined by the Fe-O bonding energy, resulting in a long time scale. The oxidation at high temperature converts a Fe{sub 3}O{sub 4} (111) epilayer to an α-Fe{sub 2}O{sub 3} (001) epilayer quickly; at low temperature, a γ-Fe{sub 2}O{sub 3} (111) epilayer was slowly generated instead. By repeating the deposition/thermal reduction processes, a thicker Fe{sub 3}O{sub 4} (111) film was obtained, which exhibit high crystallinity and moderate magnetic coercivity.

Chemical solution deposition of CaCu3Ti4O12 thin film

Indian Academy of Sciences (India)

Administrator

CaCu3Ti4O12; thin film; chemical solution deposition; dielectric properties. 1. Introduction. The CaCu3Ti4O12. (CCTO) compound has recently attracted considerable ... and Kelvin probe force microscopy (Chung et al 2004). Intrinsic .... SEM images of CCTO thin films as a function of sintering temperature. silicon based ...

Electrochemical Characterization of La0.58Sr0.4Co0.2Fe0.8O3-δ Thin Film Electrodes Prepared by Pulsed Laser Deposition

DEFF Research Database (Denmark)

Plonczak, Pawel; Søgaard, Martin; Bieberle-Hütter, Anja

2012-01-01

Electrochemical properties of La0.58Sr0.4Co0.2Fe0.8O3-δ (LSCF) thin films with well defined microstructures have been investigated. Symmetrical cells were characterized by impedance spectroscopy in the temperature range from 625 to 750°C and the oxygen partial pressure, range from 10-2 to 1 atm...... have only an area specific resistance of 0.38 Ω cm2. It is shown that the polarization resistance of thin films is approximately proportional to the inverse of the surface area of the porous cathodes in the temperature regime 625 to 750°C. The activation energy of the surface oxygen exchange process...... depends on the thin film microstructure as it decreased from 2.4 eV for dense films to 1.6 eV for porous films....

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

Science.gov (United States)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

Science.gov (United States)

Guo, Daoyou; An, Yuehua; Cui, Wei; Zhi, Yusong; Zhao, Xiaolong; Lei, Ming; Li, Linghong; Li, Peigang; Wu, Zhenping; Tang, Weihua

2016-01-01

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3. PMID:27121446

Effect of oxygen partial pressure on the density of antiphase boundaries in Fe3O4 thin films on Si(100)

Science.gov (United States)

Singh, Suraj Kumar; Husain, Sajid; Kumar, Ankit; Chaudhary, Sujeet

2018-02-01

Polycrystalline Fe3O4 thin films were grown on Si(100) substrate by reactive DC sputtering at different oxygen partial pressures PO2 for controlling the growth associated density of antiphase boundaries (APBs). The micro-Raman analyses were performed to study the structural and electronic properties in these films. The growth linked changes in the APBs density are probed by electron-phonon coupling strength (λ) and isothermal magnetization measurements. The estimated values of λ are found to vary from 0.39 to 0.56 with the increase in PO2 from 2.2 × 10-5 to 3.0 × 10-5 Torr, respectively. The saturation magnetization (saturation field) values are found to increase (decrease) from 394 (5.9) to 439 (3.0) emu/cm3 (kOe) with the increase in PO2 . The sharp Verwey transition (∼120 K), low saturation field, high saturation magnetization and low value of λ (comparable to the bulk value ∼0.51) clearly affirm the negligible amount of APBs in the high oxygen partial pressure deposited thin films.

Anisotropic magnetoresistance across Verwey transition in charge ordered Fe3O4 epitaxial films

KAUST Repository

Liu, Xiang

2017-12-26

The anisotropic magnetoresistance (AMR) near the Verwey temperature (T-V) is investigated in charge ordered Fe3O4 epitaxial films. When the temperature continuously decreases below T-V, the symmetry of AMR in Fe3O4(100) film evolves from twofold to fourfold at a magnetic field of 50 kOe, where the magnetic field is parallel to the film surface, whereas AMR in Fe3O4(111) film maintains twofold symmetry. By analyzing AMR below T-V, it is found that the Verwey transition contains two steps, including a fast charge ordering process and a continuous formation process of trimeron, which is comfirmed by the temperature-dependent Raman spectra. Just below T-V, the twofold AMR in Fe3O4(100) film originates from uniaxial magnetic anisotropy. The fourfold AMR at a lower temperature can be ascribed to the in-plane trimerons. By comparing the AMR in the films with two orientations, it is found that the trimeron shows a smaller resistivity in a parallel magnetic field. The field-dependent AMR results show that the trimeron-sensitive field has a minimum threshold of about 2 kOe.

Nonstoichiometry of Epitaxial FeTiO(3+delta) Films

Science.gov (United States)

2003-01-01

nonstoichiometry of the FeTiO3 +8 films was probably produced by cation vacancies and disarrangement of Fe3+ and Ti4 ions, which randomly occupied both interstitial...and substitutional sites of the FeTiO 3 related structure. INTRODUCTION Solid solutions of ot-Fe20 3- FeTiO3 (hematite-ilmenite) series are known to...tried to confirm preparation conditions of stoichiometric FeTiO 3 films. According to a literature on bulk crystal growth of FeTiO3 [5], very low oxygen

Photoelectrochemical Properties of FeO Supported on TiO2-Based Thin Films Converted from Self-Assembled Hydrogen Titanate Nanotube Powders

Directory of Open Access Journals (Sweden)

Kyung-Jong Noh

2012-01-01

Full Text Available A photoanode was fabricated using hematite (α-Fe2O3 nanoparticles which had been held in a thin film of hydrogen titanate nanotubes (H-TiNT, synthesized by repetitive self-assembling method on FTO (fluorine-doped tin oxide glass, which were incorporated via dipping process in aqueous Fe(NO33 solution. Current voltage (I-V electrochemical properties of the photoanode heat-treated at 500°C for 10 min in air were evaluated under ultraviolet-visible light irradiation. Microstructure and crystallinity changes were also investigated. The prepared Fe2O3/H-TiNT/FTO composite thin film exhibited about threefold as much photocurrent as the Fe2O3/FTO film. The improvement in photocurrent was considered to be caused by reduced recombination of electrons and holes, with an appropriate amount of Fe2O3 spherical nanoparticles supported on the H-TiNT/FTO film. Nanosized spherical Fe2O3 particles with about 65 wt% on the H-TiNT/FTO film showed best performance in our study.

Transparent nanostructured Fe-doped TiO2 thin films prepared by ultrasonic assisted spray pyrolysis technique

Science.gov (United States)

Rasoulnezhad, Hossein; Hosseinzadeh, Ghader; Ghasemian, Naser; Hosseinzadeh, Reza; Homayoun Keihan, Amir

2018-05-01

Nanostructured TiO2 and Fe-doped TiO2 thin films with high transparency were deposited on glass substrate through ultrasonic-assisted spray pyrolysis technique and were used in the visible light photocatalytic degradation of MB dye. The resulting thin films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence spectroscopy, x-ray diffraction (XRD), and UV-visible absorption spectroscopy techniques. Based on Raman spectroscopy results, both of the TiO2 and Fe-doped TiO2 films have anatase crystal structure, however, because of the insertion of Fe in the structure of TiO2 some point defects and oxygen vacancies are formed in the Fe-doped TiO2 thin film. Presence of Fe in the structure of TiO2 decreases the band gap energy of TiO2 and also reduces the electron–hole recombination rate. Decreasing of the electron–hole recombination rate and band gap energy result in the enhancement of the visible light photocatalytic activity of the Fe-doped TiO2 thin film.

Graphene derivatives/Fe{sub 3}O{sub 4}/polymer nanocomposite films: Optical and electrical properties

Energy Technology Data Exchange (ETDEWEB)

Hatel, Rhizlane [University Sidi Mohammed Ben Abdellah, Faculty of Sciences Dhar El Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, PO Box 1796, Atlas, Fez 30000 (Morocco); Goumri, Meryem [University Sidi Mohammed Ben Abdellah, Faculty of Sciences Dhar El Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, PO Box 1796, Atlas, Fez 30000 (Morocco); XLIM UMR 7252- University of Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges Cedex (France); Ratier, Bernard [XLIM UMR 7252- University of Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges Cedex (France); Baitoul, Mimouna, E-mail: baitoul@yahoo.fr [University Sidi Mohammed Ben Abdellah, Faculty of Sciences Dhar El Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, PO Box 1796, Atlas, Fez 30000 (Morocco)

2017-06-01

This paper reports a simple solution casting method for the preparation of nanocomposite films in which graphene oxide (GO)/Fe{sub 3}O{sub 4} nanocomposites are incorporated into poly (vinyl alcohol) (PVA) matrix. The films obtained with different weight percent of GO/Fe{sub 3}O{sub 4} (0.5, 0.7 and 1 wt%) are subjected an in situ chemical and thermal reduction in order to explore the evolution and interactions between these components under different treatments and get an insight into on how this can affects the optical and electrical properties of these nanocomposites. Characterization was carried out using, UV–Vis absorption, Photoluminescence, electrical conductivity measurements, Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy. Strong covalent functionalization occurs between the polymer and graphene derivatives (GD)/Fe{sub 3}O{sub 4} hybrids. The experimental results obtained for our nanocomposites films exhibit significant enhancement in properties highlighted the efficiency of the in situ thermal reduction. The high absorption with strong photoluminescence and electrical conductivity achieved might promote these nanocomposites for opto-electronic devices in near future. - Highlights: • Novel inorganic-organic hybrid flexible films were successfully prepared. • Good interfacial interaction between the graphene/Fe{sub 3}O{sub 4} and the hydroxyl-rich PVA. • Optical and electrical properties of Graphene Derivatives/Fe{sub 3}O{sub 4}/PVA were investigated. • Thermally reduced GO/Fe{sub 3}O{sub 4}/PVA films show high absorption and strong photoluminescence.

Influences of the iron ion (Fe3+)-doping on structural and optical properties of nanocrystalline TiO2 thin films prepared by sol-gel spin coating

International Nuclear Information System (INIS)

Ben Naceur, J.; Mechiakh, R.; Bousbih, F.; Chtourou, R.

2011-01-01

Titanium dioxide (TiO 2 ) thin films doping of various iron ion (Fe 3+ ) concentrations were deposited on silicon (Si) (100) and quartz substrates by sol-gel Spin Coating technique followed by a thermal treatment at 600 deg. C. The structure, surface morphology and optical properties, as a function of the doping, have been studied by X-ray diffractometer (XRD), Raman, ultraviolet-visible (UV-vis) and Spectroscopic Ellipsometry (SE). XRD and Raman analyzes of our thin films show that the crystalline phase of TiO 2 thin films comprised only the anatase TiO 2 , but the crystallinity decreased when the Fe 3+ content increased from 0% to 20%. During the Fe 3+ addition to 20%, the phase of TiO 2 thin film still maintained the amorphous state. The grain size calculated from XRD patterns varies from 29.3 to 22.6 nm. The complex index and the optical band gap (E g ) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreased with an increasing Fe 3+ content.

Growth and giant coercive field of spinel-structured Co3- x Mn x O4 thin films

Science.gov (United States)

Kwak, Yongsu; Song, Jonghyun; Koo, Taeyeong

2016-08-01

We grew epitaxial thin films of CoMn2O4 and Co2MnO4 on Nb-doped SrTiO3(011) and SrTiO3(001) single crystal substrates using pulsed laser deposition. The magnetic Curie temperature ( T c ) of the Co2MnO4 thin films was ~176 K, which is higher than that of the bulk whereas CoMn2O4 thin films exhibited a value of T c (~151 K) lower than that of the bulk. For the Co2MnO4 thin films, the M - H loop showed a coercive field of ~0.7 T at 10 K, similar to the value for the bulk. However, the M -H loop of the CoMn2O4(0 ll) thin film grown on a Nb-doped SrTiO3(011) substrate exhibited a coercive field of ~4.5 T at 30 K, which is significantly higher than those of the Co2MnO4 thin film and bulk. This giant coercive field, only observed for the CoMn2O4(0 ll) thin film, can be attributed to the shape anisotropy and strong spin-orbit coupling.

Growth and Characterization of Magnetoelectric Fe2TeO6 Thin Films

Science.gov (United States)

Wang, Junlei; Colon Santana, Juan; Wu, Ning; Dowben, Peter; Binek, Christian

2013-03-01

Voltage-controlled spintronics is of vital importance in information technology where power consumption and Joule heating restrict progress through scaling. Motivated by spintronic concepts and specifically by device applications utilizing electrically controlled interface or boundary magnetization (BM) in magnetic thin film heterostructures, we report on growth, structural, magnetic and magnetoelectric (ME) characterization of the antiferromagnet Fe2TeO6. Magnetometry of synthesized Fe2TeO6 powder, in combination with ME susceptibility data reveals 3D Heisenberg criticality in striking similarity to the archetypical ME chromia. X-ray diffraction shows (110) texture of the PLD grown films. Measurements of the magnetic susceptibility of the latter confirm in-plane magnetic anisotropy. X-ray photoemission spectroscopy indicates a Te-O terminated (110) surface. We interpret it in terms of surface reconstruction. Measurements of X-ray magnetic circular dichroism combined with photoemission electron microscopy support the presence of electrically controllable BM in the PLD-grown Fe2TeO6 thin film. We acknowledge financial support by NSF-MRSEC & Nanoelectronics Research Initiative.

Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

NARCIS (Netherlands)

Farokhipoor, S.; Noheda, Beatriz

2012-01-01

BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71 degrees domain walls. A smaller amount of 109 degrees domain walls are also present at the boundaries between two adjacent

Magnetic and optical properties of MgAl2O4-(Ni0.5Zn0.5Fe2O4 thin films prepared by pulsed laser deposition

Directory of Open Access Journals (Sweden)

Takeshi Misu, Naonori Sakamoto, Kazuo Shinozaki, Nobuyasu Adachi, Hisao Suzuki and Naoki Wakiya

2011-01-01

Full Text Available Thin films composed of MgAl2O4 and (Ni0.5Zn0.5Fe2O4 ([MA(100-x-NZFx] films were grown on fused SiO2 substrates by pulsed laser deposition. X-ray diffraction measurements revealed that the films were polycrystalline, and that their lattice constant varied linearly with composition, indicating the formation of a solid solution. The film with x=60 was paramagnetic and those with x ≥ 70 were ferromagnetic. The films had a transparency above 75% in the visible range, but the transparency decreased with the x value. The optical band gaps were 2.95, 2.55, 2.30 and 1.89 eV for x=20, 40, 60, 80 and 100, respectively. The Faraday rotation angle increased with x in the visible range, and the film with x=70 exhibited a value of 2000 degrees cm-1 at 570 nm, which is comparable to the rotation angle of Y3Fe5O12. Owing to their high transparency, which extends into the visible range, the [MA(100-x-NZFx] films can be used in novel magneto-optical devices.

Highly-efficient forward osmosis membrane tailored by magnetically responsive graphene oxide/Fe3O4 nanohybrid

Science.gov (United States)

Rastgar, Masoud; Shakeri, Alireza; Bozorg, Ali; Salehi, Hasan; Saadattalab, Vahid

2018-05-01

Emerging forward osmosis (FO) process as a potentially more energy efficient method has recently gained remarkable attention. Herein, considering the unique features of graphene oxide (GO), a new facile method has been proposed to magnetically modify GO within the polyamide active layer to obtain highly efficient osmotically driven membranes. While exposed to magnetic field, thin film nanocomposite membranes modified by GO/Fe3O4 nanohybrids (TFN-MMGO/Fe3O4) were synthesized by in-situ interfacial polymerization of the prepared monomer solution and organic trimesoyl chloride. Water permeability, salt rejection, and fouling tendency of the modified membranes were then evaluated and compared with both pristine thin film composite (TFC) membrane and the ones modified by GO/Fe3O4 nanohybrides in the absence of magnetic field (TFN-GO/Fe3O4). According to the experimental results, when compared to the TFC and TFN-GO/Fe3O4 membranes, respectively, 117.4% and 63.2% water flux enhancements were achieved in TFN-MMGO/Fe3O4 membrane with optimal GO/Fe3O4 nanohybrid concentration of 100 ppm. In spite of such improvements in water flux, little compromise in reverse salt leakages were observed in the TFN-MMGO/Fe3O4 membranes compared to the TFC one. As well, the TFN-MMGO/Fe3O4 and TFN-GO/Fe3O4 membranes revealed higher fouling resistances than the TFC membrane due to their distinguished manipulated surface characteristics.

Fabricate BC/Fe3O4@PPy 3D nanofiber film as flexible electrode for supercapacitor application

Science.gov (United States)

Lv, Xvdan; Li, Guohui; Pang, Zengyuan; Li, Dawei; Lei, Luo; Lv, Pengfei; Mushtaq, Muhammad; Wei, Qufu

2018-05-01

For flexible film supercapacitor, high areal capacitance is a main evaluating indicator. In this paper, bacterial cellulose (BC) with special three-dimensional structure was used as the natural flexible base material. Fe3O4 nanoparticles with average diameter of 20 nm were synthesized on the surface of BC fibers. The conductive path polypyrrole (PPy) was introduced as shell of BC/Fe3O4 fibers to further improve the pseudo capacitance in 1 mol/L H2SO4 solution. Besides, the BC/Fe3O4@PPy was used for supercapacitor application in acid electrolyte, and delivered higher areal capacitance compared to other Fe3O4 composites in previous reports. The obtained BC/Fe3O4@PPy film showed excellent mechanical strength (tensile strength reached 11 MPa), high areal specific capacitance (5.4 F cm-2 at active mass of 8.4 mg cm-2), and long cycle life (1.95 F cm-2 over 3500 cycles).

Characteristics and optical properties of iron ion (Fe{sup 3+})-doped titanium oxide thin films prepared by a sol-gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Wang, M.C. [Faculty of Fragrance and Cosmetics, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 807, Taiwan (China); Lin, H.J. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)], E-mail: hjlin@nuu.edu.tw; Yang, T.S. [Department of Materials Science and Engineering, National United University, 1 Lein-Da, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

2009-04-03

Titanium dioxide (TiO{sub 2}) thin films doping of various iron ion (Fe{sup 3+}) concentrations have been prepared on a glass substrate by the sol-gel spin coating process. Characteristics and optical properties of TiO{sub 2} thin films doping of various Fe content were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy (UV-vis) and spectroscopic ellipsometry. The crystalline phase of TiO{sub 2} thin films comprised only the anatase TiO{sub 2}, but the crystallinity decreased when the Fe{sup 3+} content increased from 0 to 25.0 wt%. During the Fe{sup 3+} addition to 25.0 wt%, the phase of TiO{sub 2} thin film still maintained the amorphous state. The absorption edge of TiO{sub 2} thin films shifted towards longer wavelengths (i.e. red shifted) from 355 to 415 nm when the Fe{sup 3+}-doped concentration increased from 0 to 25.0 wt%. The values of the refractive index (n), and extinction coefficient (k), decreased with an increasing Fe{sup 3+} content. Moreover, the band-gap energy of TiO{sub 2} thin films also decreased from 3.29 to 2.83 eV with an increase in the Fe{sup 3+} content from 0 to 25.0 wt%.

Optical, ferroelectric and magnetic properties of multiferroelectric BiFeO3-(K0.5Na0.5)0.4(Sr 0.6Ba0.4)0.8Nb2O6 thin films

KAUST Repository

Yao, Yingbang

2014-02-01

Multiferroic BiFeO3-(K0.5Na0.5) 0.4(Sr0.6Ba0.4)0.8Nb 2O6 (BFO-KNSBN) trilayer thin films, were epitaxially grown on MgO(0 0 1) and SrTiO3(0 0 1) by using pulsed laser deposition (PLD). Their ferroelectric, magnetic, dielectric and optical properties were investigated. It was found that both ferroelectric polarization and dielectric constant of the films were enhanced by introducing KNSBN as a barrier layer. Meanwhile, ferromagnetism of BFO was maintained. More interestingly, a double hysteresis magnetic loop was observed in the KNSBN-BFO-KNSBN trilayer films, where exchange bias and secondary phase in the BFO layer played crucial roles. Interactions between adjacent layers were revealed by temperature-dependent Raman spectroscopic measurements. © 2013 Elsevier B.V. All rights reserved.

Preparation of LiMn2O4 cathode thin films for thin film lithium secondary batteries by a mist CVD process

International Nuclear Information System (INIS)

Tadanaga, Kiyoharu; Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro; Duran, Alicia; Aparacio, Mario

2014-01-01

Highlights: • LiMn 2 O 4 thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn 2 O 4 thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn 2 O 4 cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles

Study on the Heating Behavior of Fe_3O_4-Embedded Thermoplastic Polyurethane Adhesive Film via Induction heating

International Nuclear Information System (INIS)

Bae, Duck Hwan; Shon, Min Young; Oh, Sang Taek; Kim, Gu Ni

2016-01-01

The heating behavior of thermoplastic polyurethane adhesive (TPU) embedded by nanometer or micrometer Fe_3O_4 particle is examined by induction heating. The effects of the size and the amount of Fe_3O_4 particle, TPU film thickness, and input power of the induction heater were examined on heating behaviors of TPU. The quantity of heat generated in the TPU films increased with the amount of Fe_3O_4 particles, film thickness, or input power. On the other hand, the quantity of heat generation of TPU is decreased with increasing Fe_3O_4 size. We confirmed that the mechanism of hysteresis led to heat loss in the nanometer and micrometer-sized Fe_3O_4 particles, and it was the key controller of the quantity of heat generated in the Fe_3O_4 particle-embedded TPU films by induction heating.

Absence of traditional magnetoresistivity mechanisms in Sr2FeMoO6 thin films grown on SrTiO3, MgO and NdGaO3 substrates.

Science.gov (United States)

Saloaro, M; Majumdar, S; Huhtinen, H; Paturi, P

2012-09-12

Magnetoresistive double perovskite Sr(2)FeMoO(6) thin films were grown with two different deposition pressures on SrTiO(3), MgO and NdGaO(3) substrates by pulsed laser deposition and thorough structural, magnetic and magneto-transport characterization was made. According to x-ray diffraction, all the films were phase pure and fully textured. Indication of substrate dependent strain and low angle grain boundaries was found, especially in films on MgO. Both the deposition pressure and the choice of the substrate have a strong influence on the saturation magnetization, M(s), and Curie temperature, T(C). The structural and magnetic data indicate the presence of anti-site disorder (ASD) in the films. The temperature dependence of resistivity showed semiconductive behaviour at temperatures below 100 K and metallic behaviour at higher temperatures. The semiconductive behaviour was found to increase with increasing ASD. In good quality films, up to 12% negative magnetoresistance (MR) was observed and films grown on MgO and NGO substrates also showed low field MR. However, the most significant observation of this study was that the magnetoresistivity of these Sr(2)FeMoO(6) thin films could not be explained with any traditional MR mechanism, but carried the clear signature of superposition of different mechanisms, in particular low angle grain boundary tunnelling and suppression of antiferromagnetically ordered domains under a magnetic field.

Raman scattering in La1-xSrxFeO3-δ thin films: annealing-induced reduction and phase transformation

Science.gov (United States)

Islam, Mohammad A.; Xie, Yujun; Scafetta, Mark D.; May, Steven J.; Spanier, Jonathan E.

2015-04-01

Raman scattering in thin film La0.2Sr0.8FeO3-δ on MgO(0 0 1) collected at 300 K after different stages of annealing at selected temperatures T (300 K topotactic transformation of the crystal structure from that of the rhombohedral ABO3 perovskites to that of Brownmillerite-like structure consisting of octahedrally and tetrahedrally coordinated Fe atoms.

Magnetic and superconductivity studies on (In{sub 1−x}Fe{sub x}){sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Sai Krishna, N. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632 014, Tamil Nadu (India); Kaleemulla, S., E-mail: skaleemulla@gmail.com [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632 014, Tamil Nadu (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Tamil Nadu (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu 603 104, Tamil Nadu (India); Madhusudhana Rao, N.; Krishnamoorthi, C.; Rigana Begam, M. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632 014, Tamil Nadu (India); Omkaram, I. [Department of Electronics and Radio Engineering, Kyung Hee University, Yongin-si Gyeonggi-do 446-701 (Korea, Republic of); Sreekantha Reddy, D. [Department of Physics and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-07-15

Highlights: • Fe doped In{sub 2}O{sub 3} thin films deposited using electron beam evaporation technique. • Characterization of the samples using XRD, SEM, EDAX, AES, Raman spectroscopy, FT-IR, VSM and magnetoresistance. • All Fe doped In{sub 2}O{sub 3} thin films exhibited the cubic structure of In{sub 2}O{sub 3}. • Pure and Fe doped In{sub 2}O{sub 3} samples exhibited room temperature ferromagnetism and superconductivity at 2 K. - Abstract: Magnetic, magnetoresistivity and superconductivity studies were carried out on (In{sub 1−x}Fe{sub x}){sub 2}O{sub 3} (x = 0.00, 0.03, 0.05 and 0.07) thin films (2D structures) grown on glass substrate by electron beam evaporation technique at 350 °C. The films have an average size of 120 nm particles. All the samples shown soft ferromagnetic hysteresis loops at room temperature and saturation magnetization increased with iron dopant concentration. Observed magnetization could be best interpreted by F-center mediated magnetic exchange interaction in the samples. Temperature dependent resistivity of the sample (x = 0.00 and 0.07) showed metallic behavior down to very low temperatures and superconductivity at 2 K for undoped In{sub 2}O{sub 3} whereas the In{sub 1.86}Fe{sub 0.14}O{sub 3} sample shows superconductivity below 2 K in the absence of magnetic fields. The reduction in transition temperature was attributed to increase electrical disorder with iron doping. Both samples showed positive magnetoresistivity (MR) in superconducting state due to increase of resistivity resulting from breaking of superconducting Cooper pairs upon application of magnetic field. In addition, both the samples show feeble negative MR in normal electrical state. The observed MR in normal state is not due to spin polarized tunneling instead it is due to suppression of scattering of charge carrier by single occupied localized states.

A comparative study on the magnetic and electrical properties of Bi{sub 0.89}Tb{sub 0.11}FeO{sub 3} and Bi{sub 0.89}Tb{sub 0.11}FeO{sub 3}/CoFe{sub 2}O{sub 4} multiferroic thin films

Energy Technology Data Exchange (ETDEWEB)

Tan, Guoqiang, E-mail: tan3114@163.com; Luo, Yangyang; Dong, Guohua; Liu, Wenlong; Ren, Huijun; Xia, Ao

2015-02-25

Highlights: • BTFO and CFO phases have perfect double layered structure on FTO substrates. • The CFO layer has a large effect on the dielectric properties of the BTFO/CFO. • The huge ferroelectric polarization (2P{sub r} ∼ 218 μC/cm{sup 2}) is obtained in BTFO/CFO. • BTFO/CFO exhibits the desired magnetic characteristics (2M{sub r} ∼ 100.9 emu/cm{sup 3}). - Abstract: A double layered multiferroic thin film consisting of Bi{sub 0.89}Tb{sub 0.11}FeO{sub 3} (BTFO) and CoFe{sub 2}O{sub 4} (CFO) layers has been deposited on a FTO/glass substrate by the chemical solution deposition method. The influence of magnetic layer on the crystal structure, dielectric, ferroelectric and magnetic properties of the double layered film was investigated. X-ray diffraction, Raman spectra and scanning electron microscope results demonstrate the perfect formation of double layered thin film structure without second phase. With the introduction CFO magnetic layer, the double layered film of dielectric constant shows strong frequency dependence, and the leakage current density and the multiferroic properties have been significantly improved. It is believed that at room temperature the superior multiferroic parameters (2P{sub r} ∼ 218 μC/cm{sup 2} and 2M{sub r} ∼ 100.9 emu/cm{sup 3}) of the BTFO/CFO film are a major breakthrough in the double layered BFO-based films. The double layered film with excellent multiferroic properties become an attractive research focus in potential multifunctional devices.

Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films

International Nuclear Information System (INIS)

Guo Yiping; Guo Bing; Dong Wen; Li Hua; Liu Hezhou

2013-01-01

The diode and photovoltaic effects of BiFeO 3 and Bi 0.9 Sr 0.1 FeO 3−δ polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi 0.9 Sr 0.1 FeO 3−δ thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO 3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities. (paper)

Ab initio understanding of magnetic properties in Zn2+ substitution of Fe3O4 ultra-thin film with dilute Zn substitution

Science.gov (United States)

Huang, Zhaocong; Chen, Qian; Jiang, Sheng; Dong, Shuai; Zhai, Ya

2018-05-01

The mechanism of the magnetic properties on the Zn2+ substituted Fe3O4 film have been investigated based on first principle calculations. It is found that the surface effect plays an important role in the occupation of Zn ion, and in turn changes the magnetic moment. It may also destroy the half metallic behavior of Fe3O4 film even if the Zn2+ concentration only is one Zn2+ per unit cell (4%), which is different from that in bulk material.

Optical Properties and Electrochemical Performance of LiFePO4 Thin Films Deposited on Transparent Current Collectors.

Science.gov (United States)

Lee, HyunSeok; Yim, Haena; Kim, Kwang-Bum; Choi, Ji-Won

2015-11-01

LiFePO4 thin film cathodes are deposited on various transparent conducting oxide thin films on glass, which are used as cathode current collectors. The XRD patterns show that the thin films have the phase of LiFePO4 with an ordered olivine structure indexed to the orthorhombic Pmna space group. LiFePO4 thin film deposited on various TCO glass substrates exhibits transmittance of about 53%. The initial specific discharge capacities of LiFePO4 thin films are 25.0 μAh/cm2 x μm on FTO, 33.0 μAh/cm2 x μm on ITO, and 13.0 μAh/cm2 x μm on AZO coated glass substrates. Interestingly, the retention capacities of LiFePO4 thin films are 76.0% on FTO, 31.2% on ITO, and 37.7% on AZO coated glass substrates at 20th cycle. The initial specific discharge capacity of the LiFePO4/FTO electrode is slightly lower, but the discharge capacities of the LiFePO4/FTO electrode relatively decrease less than those of the others such as LiFePO4/ITO and LiFePO4/AZO with cycling. The results reported here provide the high transparency of LiFePO4 thin films cathode materials and the good candidate as FTO current collector of the LiFePO4 thin film cathode of transparent thin film rechargeable batteries due to its high transparency and cyclic retention.

Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

International Nuclear Information System (INIS)

Ostos, C.; Raymond, O.; Siqueiros, J. M.; Suarez-Almodovar, N.; Bueno-Baques, D.; Mestres, L.

2011-01-01

In this study, (011)-highly oriented Sr, Nb co-doped BiFeO 3 (BFO) thin films were successfully grown on SrRuO 3 /Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of ≅5.3 nm and average grain sizes of ≅65-70 nm for samples with different thicknesses. Remanent polarization values (2P r ) of 54 μC cm -2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe 3+ /Fe 2+ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO 3 /Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.

Enhancement of the electrical properties of (Eu,Zn) co-doped BiFeO3 thin films prepared by using chemical solution deposition

Science.gov (United States)

Kim, Youn-Jang; Kim, Jin Won; Kim, Hae Jin; Kim, Sang Su

2013-04-01

We prepared pure BiFeO3 (BFO) and (Bi0.9Eu0.1)(Fe0.975Zn0.025)O3-δ (BEFZO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BEFZO thin film. The leakage current density of the BEFZO thin film was three orders of magnitude lower than that of the pure BFO, 3.93 × 10-6 A/cm2 at 100 kV/cm. The remnant polarization (2 P r ) and the coercive electric field (2 E c ) of the BEFZO thin film were 42 µC/cm2 and 898 kV/cm at an applied electric field of 1000 kV/cm and at a frequency of 1 kHz and the values decreased with increasing measurement frequency to 18 µC/cm2 and 866 kV/cm at 10 kHz, respectively. Also, the fatigue endurances were evaluated at peak voltages of 8-10 V after 1.44 × 1010 cycles in the BEFZO thin films and were 70 ˜ 90% of the initial values. We also confirmed that the 2 P r was fairly saturated at measurement frequency about 30 kHz for the BEFZO thin film.

Interfacial effects on the electrical properties of multiferroic BiFeO3/Pt/Si thin film heterostructures

International Nuclear Information System (INIS)

Yakovlev, S.; Zekonyte, J.; Solterbeck, C.-H.; Es-Souni, M.

2005-01-01

Polycrystalline BiFeO 3 thin films of various thickness were fabricated on (111)Pt/Ti/SiO 2 /Si substrates via chemical solution deposition. The electrical properties were investigated using impedance and leakage current measurements. X-ray photoelectron spectroscopy (XPS) combined with Ar ion milling (depth profiling) was used to investigate elemental distribution near the electrode-film interface. It is shown that the dielectric constant depends on film thickness due to the presence of an interfacial film-electrode layer evidenced by XPS investigation. Direct current conductivity is found to be governed by Schottky and/or Poole-Frenkel mechanisms

Dipole pinning effect on photovoltaic characteristics of ferroelectric BiFeO3 films

Science.gov (United States)

Biswas, P. P.; Thirmal, Ch.; Pal, S.; Murugavel, P.

2018-01-01

Ferroelectric bismuth ferrite is an attractive candidate for switchable devices. The effect of dipole pinning due to the oxygen vacancy layer on the switching behavior of the BiFeO3 thin film fabricated by the chemical solution deposition method was studied after annealing under air, O2, and N2 environment. The air annealed film showed well defined and dense grains leading to a lower leakage current and superior electrical properties compared to the other two films. The photovoltage and transient photocurrent measured under positive and negative poling elucidated the switching nature of the films. Though the air and O2 annealed films showed a switchable photovoltaic response, the response was severely affected by oxygen vacancies in the N2 annealed film. In addition, the open circuit voltage was found to be mostly dependent on the polarization of BiFeO3 rather than the Schottky barriers at the interface. This work provides an important insight into the effect of dipole pinning caused by oxygen vacancies on the switchable photovoltaic effect of BiFeO3 thin films along with the importance of stoichiometric, defect free, and phase pure samples to facilitate meaningful practical applications.

Magnetic and magneto-optical properties of FeRh thin films

International Nuclear Information System (INIS)

Inoue, Sho; Nam, Nguyen T.; Phuoc, Nguyen N.; Cao Jiangwei; Yu Ko, Hnin Yu; Suzuki, Takao

2008-01-01

The magnetic and magneto-optical properties of FeRh thin films epitaxially deposited onto MgO(1 0 0) substrates by RF sputter-deposition system have been investigated in conjunction with the structure. An intriguing virgin effect has been found in the M-T curves of the as-deposited FeRh thin films, which is presumably interpreted in term of a change in structural phase when heating. Also, a (negative) maximum peak of Kerr rotation at around 3.8 eV has been observed when FeRh thin films are in ferromagnetic state. The polar Kerr rotation angle is found to increase at temperatures above 100 deg. C, which corresponds to the antiferromagnet (AF)-ferromagnet (FM) transition of FeRh thin films

Tunable flux pinning landscapes achieved by functional ferromagnetic Fe2O3:CeO2 vertically aligned nanocomposites in YBa2Cu3O7−δ thin films

International Nuclear Information System (INIS)

Tsai, Chen-Fong; Huang, Jijie; Lee, Joon-Hwan; Khatkhatay, Fauzia; Chen, Li; Chen, Aiping; Su, Qing; Wang, Haiyan

2015-01-01

Highlights: • Functional ferromagnetic (Fe 2 O 3 ) x :(CeO 2 ) 1−x vertically aligned nanocomposites (VAN). • An ordered arrangement of ferromagnetic Fe 2 O 3 nanoinclusions. • Significant in-field improvement of J c (H//c) in both VAN nanolayer capped and buffered samples. • T c above 90 K and the J c sf maximized at 3.07 MA/cm 2 (75 K) and 9.2 MA/cm 2 (65 K) for 30% Fe 2 O 3 sample. - Abstract: Functional ferromagnetic (Fe 2 O 3 ) x :(CeO 2 ) 1−x vertically aligned nanocomposite (VAN) layers were deposited as either buffer or cap layers for YBa 2 Cu 3 O 7−δ (YBCO) thin films. The composition of Fe 2 O 3 dopants in the VAN nanolayers is controlled at 10%, 30% and 50% in order to create different arrangements of Fe 2 O 3 and CeO 2 nanopillars and therefore to tune the flux pining landscapes. The composition variation provides tunable and ordered arrangements of magnetic nanodopants and interfacial defects as pinning centers in the YBCO thin films. The superconducting property measurements show that most doped samples obtain a T c above 90 K and the J c sf measured at 75 K and 65 K maximized at 3.07 MA/cm 2 and 9.2 MA/cm 2 for 30% Fe 2 O 3 VAN doped sample. As the temperature decreased to 5 K, the sample with 50% Fe 2 O 3 VAN doped sample show the best pinning effect due to pronounced magnetic pinning effects. This work demonstrates the tunable density of magnetic pinning centers can be achieved by VAN to meet the specific pinning requirement

Unraveling the magnetic properties of BiFe{sub 0.5}Cr{sub 0.5}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Vinai, G.; Petrov, A. Yu.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy); Khare, A. [CNR-SPIN Napoli and Dipartimento di Fisica, Università di Napoli “Federico II,” I-80126 Napoli (Italy); Department of Physics, Sungkyunkwan University, Suwon 440 746 (Korea, Republic of); Rana, D. S. [Department of Physics, Indian Institute of Science Education and Research Bhopal, Govindpura, Bhopal 462023 (India); Di Gennaro, E.; Scotti di Uccio, U.; Miletto Granozio, F. [CNR-SPIN Napoli and Dipartimento di Fisica, Università di Napoli “Federico II,” I-80126 Napoli (Italy); Gobaut, B. [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Moroni, R. [CNR-SPIN, Corso Perrone 24, I-16152 Genova (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy); Department of Physics, Università degli Studi di Milano, via Celoria 16, I-20133 Milano (Italy)

2015-11-01

We investigate the structural, chemical, and magnetic properties on BiFe{sub 0.5}Cr{sub 0.5}O{sub 3} (BFCO) thin films grown on (001) (110) and (111) oriented SrTiO{sub 3} (STO) substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field.

High magnetic field properties of Fe-pnictide thin films

Energy Technology Data Exchange (ETDEWEB)

Kurth, Fritz

2015-11-20

The recent discovery of high-temperature superconductivity in Fe-based materials triggered worldwide efforts to investigate their fundamental properties. Despite a lot of similarities to cuprates and MgB{sub 2}, important differences like near isotropic behaviour in contrast to cuprates and the peculiar pairing symmetry of the order parameter (OP) have been reported. The OP symmetry of Fe-based superconductors (FBS) was theoretically predicted to be of so-called s± state prior to various experimental works. Still, most of the experimental results favour the s± scenario; however, definitive evidence has not yet been reported. Although no clear understanding of the superconducting mechanisms yet exists, potential applications such as high-field magnets and Josephson devices have been explored. Indeed, a lot of reports about FBS tapes, wires, and even SQUIDs have been published to this date. In this thesis, the feasibility of high-field magnet applications of FBS is addressed by studying their transport properties, involving doped BaFe{sub 2}As{sub 2} (Ba-122) and LnFeAs(O,F) [Ln=Sm and Nd]. Particularly, it is important to study physical properties in a sample form (i.e. thin films) that is close to the conditions found in applications. However, the realisation of epitaxial FBS thin films is not an easy undertaking. Recent success in growing epitaxial FBS thin films opens a new avenue to delve into transport critical current measurements. The information obtained through this research will be useful for exploring high-field magnet applications. This thesis consists of 7 chapters: Chapter 1 describes the motivation of this study, the basic background of superconductivity, and a brief summary of the thin film growth of FBS. Chapter 2 describes experimental methods employed in this study. Chapter 3 reports on the fabrication of Co-doped Ba-122 thin films on various substrates. Particular emphasis lies on the discovery of fluoride substrates to be beneficial for

Characterization of nanostructured Mn3O4 thin films grown by SILAR method at room temperature

International Nuclear Information System (INIS)

Ubale, A.U.; Belkhedkar, M.R.; Sakhare, Y.S.; Singh, Arvind; Gurada, Chetan; Kothari, D.C.

2012-01-01

A novel successive ionic layer adsorption and reaction method has been successfully employed to grow nanostructured conducting nearly transparent thin films of Mn 3 O 4 on to glass substrates at room temperature using MnCl 2 and NaOH as cationic and anionic precursors. The structural and morphological characterizations of the as deposited Mn 3 O 4 films have been carried out by means of X-ray diffraction (XRD), Field Emission Scanning Electron Micrograph (FESEM), EDAX, Atomic Fore Microscopy (AFM) and Fourier Transform Infrared Spectrum (FTIR) analysis. The optical absorption and electrical resistivity measurements were carried out to investigate optical band gap and activation energy of Mn 3 O 4 films deposited by SILAR method. The optical band gap and activation energy of the as deposited film is found to be 2.70 and 0.14 eV respectively. The thermo-emf measurements of Mn 3 O 4 thin film confirm its p-type semiconducting nature. Highlights: ► Nanostructured Mn 3 O 4 thin film is prepared by SILAR method at room temperature. ► The film is nanocrystalline with orthorhombic structure of Mn 3 O 4 . ► The XRD, FTIR, FESEM, EDX and AFM characterization confirms nanocrystalline nature. ► Optical band gap, electrical resistivity and activation energy of film is reported. ► A thermo-emf measurement confirms p-type conductivity of Mn 3 O 4 films.

Epitaxial growth and characterization of CoO/Fe(001) thin film layered structures

International Nuclear Information System (INIS)

Brambilla, A.; Sessi, P.; Cantoni, M.; Duo, L.; Finazzi, M.; Ciccacci, F.

2008-01-01

By means of X-ray photoemission spectroscopy and low energy electron diffraction, we show that it is possible to grow good quality thin epitaxial CoO films on Fe(001) substrates, through deposition in oxygen atmosphere. In particular, the composition and the structure of CoO(001)/Fe(001) bilayer systems and Fe(001)/CoO(001)/Fe(001) trilayer systems have been investigated by monitoring the evolution of the chemical interactions at the interfaces as a function of CoO thickness and growth temperature. We observe the presence of Fe oxides at the CoO/Fe interface and of a thin layer of metallic cobalt at the upper Fe/CoO interface of trilayer systems

Multiferroic properties of BiFeO3/Bi4Ti3O12 double-layered thin films fabricated by chemical solution deposition

International Nuclear Information System (INIS)

Yi, Seung Woo; Kim, Sang Su; Kim, Jin Won; Jo, Hyun Kyung; Do, Dalhyun; Kim, Won-Jeong

2009-01-01

Multiferroic BiFeO 3 /Bi 4 Ti 3 O 12 (BFO/BTO) double-layered film was fabricated on a Pt(111)/Ti/SiO 2 /Si(100) substrate by a chemical solution deposition method. The effect of an interfacial BTO layer on electrical and magnetic properties of BFO was investigated by comparing those of pure BFO and BTO films prepared by the same condition. The X-ray diffraction result showed that no additional phase was formed in the double-layered film, except BFO and BTO phases. The remnant polarization (2P r ) of the double-layered film capacitor was 100 μC/cm 2 at 250 kV/cm, which is much larger than that of the pure BFO film capacitor. The magnetization-magnetic field hysteresis loop revealed weak ferromagnetic response with remnant magnetization (2M r ) of 0.4 kA/m. The values of dielectric constant and dielectric loss of the double-layered film capacitor were 240 and 0.03 at 100 kHz, respectively. Leakage current density measured from the double-layered film capacitor was 6.1 x 10 -7 A/cm 2 at 50 kV/cm, which is lower than the pure BFO and BTO film capacitors.

The effect of Cr substitution on the structural, electronic and magnetic properties of pulsed laser deposited NiFe_2O_4 thin films

International Nuclear Information System (INIS)

Panwar, Kalpana; Tiwari, Shailja; Bapna, Komal; Heda, N.L.; Choudhary, R.J.; Phase, D.M.; Ahuja, B.L.

2017-01-01

We have studied the structural, electronic and magnetic properties of pulsed laser deposited thin films of Ni_1_−_xCr_xFe_2O_4 (x=0.02 and 0.05) on Si (111) and Si (100) substrates. The films reveal single phase, polycrystalline structure with larger grain size on Si (111) substrate than that on Si (100) substrate. Contrary to the expected inverse spinel structure, x-ray photoemission (XPS) studies reveal the mixed spinel structure. XPS results suggest that Ni and Fe ions exist in 2+ and 3+ states, respectively, and they exist in tetrahedral as well as octahedral sites. The deviation from the inverse spinel leads to modified magnetic properties. It is observed that saturation magnetization drastically drops compared to the expected saturation value for inverse spinel structure. Strain in the films and lattice distortion produced by the Cr doping also appear to influence the magnetic properties. - Highlights: • Thin films of Ni_1_−_xCr_xFe_2O_4 are grown on Si(111) and Si(100) substrates. • Films on Si(111) substrate are better crystalline than those on Si(100). • XRD and FTIR results confirm the single phase growth of the films. • Cationic distribution deviates from inverse spinel structure, as revealed by XPS. • Saturation magnetization is larger on Si(100) but lower than the bulk value.

Epitaxial growth and structural characterization of Pb(Fe1/2Nb1/2)O3 thin films

International Nuclear Information System (INIS)

Peng, W.; Lemee, N.; Holc, J.; Kosec, M.; Blinc, R.; Karkut, M.G.

2009-01-01

We have grown lead iron niobate thin films with composition Pb(Fe 1/2 Nb 1/2 )O 3 (PFN) on (0 0 1) SrTiO 3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar thermodynamic stability spaces, a pyrochlore phase often coexists with the PFN perovskite phase. By optimizing the kinetic parameters, we succeeded in identifying a deposition window which resulted in epitaxial perovskite-phase PFN thin films with no identifiable trace of impurity phases appearing in the X-ray diffractograms. PFN films having thicknesses between 20 and 200 nm were smooth and epitaxially oriented with the substrate and as demonstrated by RHEED streaks which were aligned with the substrate axes. X-ray diffraction showed that the films were completely c-axis oriented and of excellent crystalline quality with low mosaicity (X-ray rocking curve FWHM≤0.09 deg.). The surface roughness of thin films was also investigated by atomic force microscopy. The root-mean-square roughness varies between 0.9 nm for 50-nm-thick films to 16 nm for 100-nm-thick films. We also observe a correlation between grain size, surface roughness and film thickness.

Influences of the iron ion (Fe{sup 3+})-doping on structural and optical properties of nanocrystalline TiO{sub 2} thin films prepared by sol-gel spin coating

Energy Technology Data Exchange (ETDEWEB)

Ben Naceur, J. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Mechiakh, R., E-mail: raouf_mechiakh@yahoo.fr [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia); Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar, Batna (Algeria); Bousbih, F.; Chtourou, R. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche des Sciences et Technologies de l' Energie, BP.95, Hammam-Lif 2050 (Tunisia)

2011-10-01

Titanium dioxide (TiO{sub 2}) thin films doping of various iron ion (Fe{sup 3+}) concentrations were deposited on silicon (Si) (100) and quartz substrates by sol-gel Spin Coating technique followed by a thermal treatment at 600 deg. C. The structure, surface morphology and optical properties, as a function of the doping, have been studied by X-ray diffractometer (XRD), Raman, ultraviolet-visible (UV-vis) and Spectroscopic Ellipsometry (SE). XRD and Raman analyzes of our thin films show that the crystalline phase of TiO{sub 2} thin films comprised only the anatase TiO{sub 2}, but the crystallinity decreased when the Fe{sup 3+} content increased from 0% to 20%. During the Fe{sup 3+} addition to 20%, the phase of TiO{sub 2} thin film still maintained the amorphous state. The grain size calculated from XRD patterns varies from 29.3 to 22.6 nm. The complex index and the optical band gap (E{sub g}) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreased with an increasing Fe{sup 3+} content.

New Method for Fabrication of Co3O4 Thin Film Sensors: Structural, Morphological and Optoelectronic Properties

Directory of Open Access Journals (Sweden)

Vikas PATIL

2011-05-01

Full Text Available Nanocrystalline Co3O4 thin films have been deposited by spin coating technique and then have been analyzed to test their application in NH3 gas-sensing technology. In particular, spectrophotometric and conductivity measurements have been performed in order to determine the optical and electrical properties of Co3O4 thin films. The structure and the morphology of such material have been investigated by X ray diffraction and Scanning electron microscopy. The X-ray diffraction studies confirmed that the films grown by this technique have good crystalline cubic spinel structure and present a random orientation. The morphology of the sol gel derived Co3O4 shows nanocrystalline grains with some overgrown clusters .The optical band gap has been determined from the absorption coefficient. We found that the optical band gap energy decreases from 2.58 eV to 2.07 eV with increasing annealing temperature between 400-700 oC. These mean that the optical quality of Co3O4 films is improved by annealing. The dc electrical conductivity of Co3O4 thin films were increased from 10-4 to 10-2(Ω cm-1 with increase in annealing temperature. The electron carrier concentration (n and mobility (μ of Co3O4 films annealed at 400-700 oC were estimated to be of the order of 2.4 to 4.5 x 1019 cm-3 and 5.2 to 7.0 x 10-5 cm2 V-1 s-1 respectively. It is observed that Co3O4 thin film annealing at 700 oC after deposition provide a smooth and flat texture suited for optoelectronic applications. Gas sensing properties showed that the Co3O4 films (at 700 oC were sensitive as well as fast in responding to NH3. A high sensitivity for ammonia indicates that the Co3O4 films are selective for this gas.

Structural, electrical and magnetic properties of (Bi{sub 0.9}RE{sub 0.1})(Fe{sub 0.97}Co{sub 0.03})O{sub 3} (RE = Nd and Gd) thin films

Energy Technology Data Exchange (ETDEWEB)

Xue, Xu, E-mail: xuexu9@163.com; Tan, Guoqiang, E-mail: tan3114@163.com; Liu, Wenlong; Ren, Huijun

2014-04-01

Highlights: • Nd–Co and Gd–Co codoped BiFeO{sub 3} thin films are synthesized by chemical solution deposition method. • Enhanced magnetic property is observed in BGFC thin film at room temperature. • The onset electric field of FN tunneling of the films is associated with band gaps. • Both ferromagnetism and diamagnetism coexist in the BNFC film. - Abstract: Rhombohedral (Bi{sub 0.9}RE{sub 0.1})(Fe{sub 0.97}Co{sub 0.03})O{sub 3} (RE = Nd and Gd) thin films were deposited on FTO substrates by using a chemical solution deposition method. Raman scattering spectra reveal that the BiFeO{sub 3} lattices are able to incorporate Nd/Gd and Co ions with no effect on the basic rhombohedral structure. The chemical shift of Bi 4f, Fe 2p and O 1s core levels of the films is investigated by the X-ray photoelectron spectroscopy (XPS) analysis. The presence of defects in the films has been estimated through XPS study, which has a great effect on the dielectric dispersion and ferroelectric polarization. The intrinsic density of free electrons associated with band gap is the dominating factor which controls the FN tunneling conductance mechanism of the films. Both ferromagnetism and diamagnetism coexist in the BNFC film, while only ferromagnetism is observed in the BGFC film.

Electrochromic properties of nanocrystalline MoO3 thin films

International Nuclear Information System (INIS)

Hsu, C.-S.; Chan, C.-C.; Huang, H.-T.; Peng, C.-H.; Hsu, W.-C.

2008-01-01

Electrochromic MoO 3 thin films were prepared by a sol-gel spin-coating technique. The spin-coated films were initially amorphous; they were calcined, producing nanocrystalline MoO 3 thin films. The effects of annealing temperatures ranging from 100 o C to 500 o C were investigated. The electrochemical and electrochromic properties of the films were measured by cyclic voltammetry and by in-situ optical transmittance techniques in 1 M LiClO 4 /propylene carbonate electrolyte. Experimental results showed that the transmittance of MoO 3 thin films heat-treated at 350 o C varied from 80% to 35% at λ = 550 nm (ΔT = ∼ 45%) and from 86% to 21% at λ ≥ 700 nm (ΔT = ∼ 65%) after coloration. Films heat-treated at 350 deg. C exhibited the best electrochromic properties in the present study

Bulk photovoltaic effect in epitaxial (K, Nb) substituted BiFeO3 thin films

Science.gov (United States)

Agarwal, Radhe; Zheng, Fan; Sharma, Yogesh; Hong, Seungbum; Rappe, Andrew; Katiyar, Ram

We studied the bulk photovoltaic effect in epitaxial (K, Nb) modified BiFeO3 (BKFNO) thin films using theoretical and experimental methods. Epitaxial BKFNO thin films were grown by pulsed laser deposition (PLD). First, we have performed first principles density function theory (DFT) using DFT +U method to calculate electronic band structure, including Hubbard-Ueff (Ueff =U-J) correction into Hamiltonian. The electronic band structure calculations showed a direct band gap at 1.9 eV and a defect level at 1.7 eV (in a 40 atom BKFNO supercell), sufficiently lower in comparison to the experimentally observed values. Furthermore, the piezoforce microscopy (PFM) measurements indicated the presence of striped polydomains in BKFNO thin films. Angle-resolved PFM measurements were also performed to find domain orientation and net polarization directions in these films. The experimental studies of photovoltaic effect in BKNFO films showed a short circuit current of 59 micro amp/cm2 and open circuit voltage of 0.78 V. We compared our experimental results with first principles shift current theory calculations of bulk photovoltaic effect (BPVE).The synergy between theory and experimental results provided a realization of significant role of BPVE in order to understand the photovoltaic mechanism in ferroelectrics.

Preparation of LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries by a mist CVD process

Energy Technology Data Exchange (ETDEWEB)

Tadanaga, Kiyoharu, E-mail: tadanaga@chem.osakafu-u.ac.jp [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Yamaguchi, Akihiro; Sakuda, Atsushi; Hayashi, Akitoshi; Tatsumisago, Masahiro [Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka, 599-8531 (Japan); Duran, Alicia; Aparacio, Mario [Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas, Kelsen 5 (Campus de Cantoblanco), Madrid, 28049 (Spain)

2014-05-01

Highlights: • LiMn{sub 2}O{sub 4} thin films were prepared by using the mist CVD process. • An aqueous solution of lithium and manganese acetates is used for the precursor solution. • The cell with the LiMn{sub 2}O{sub 4} thin films exhibited a capacity of about 80 mAh/g. • The cell showed good cycling performance during 10 cycles. - Abstract: LiMn{sub 2}O{sub 4} cathode thin films for thin film lithium secondary batteries were prepared by using so-called the “mist CVD process”, employing an aqueous solution of lithium acetate and manganese acetate, as the source of Li and Mn, respectively. The aqueous solution of starting materials was ultrasonically atomized to form mist particles, and mists were transferred by nitrogen gas to silica glass substrate to form thin films. FE-SEM observation revealed that thin films obtained by this process were dense and smooth, and thin films with a thickness of about 750 nm were obtained. The electrochemical cell with the thin films obtained by sintering at 700 °C exhibited a capacity of about 80 mAh/g, and the cell showed good cycling performance during 10 cycles.

Study on the Heating Behavior of Fe{sub 3}O{sub 4}-Embedded Thermoplastic Polyurethane Adhesive Film via Induction heating

Energy Technology Data Exchange (ETDEWEB)

Bae, Duck Hwan; Shon, Min Young [Pukyong National University, Busan (Korea, Republic of); Oh, Sang Taek; Kim, Gu Ni [Korea Institute of Footwear and Leather Technology, Busan (Korea, Republic of)

2016-08-15

The heating behavior of thermoplastic polyurethane adhesive (TPU) embedded by nanometer or micrometer Fe{sub 3}O{sub 4} particle is examined by induction heating. The effects of the size and the amount of Fe{sub 3}O{sub 4} particle, TPU film thickness, and input power of the induction heater were examined on heating behaviors of TPU. The quantity of heat generated in the TPU films increased with the amount of Fe{sub 3}O{sub 4} particles, film thickness, or input power. On the other hand, the quantity of heat generation of TPU is decreased with increasing Fe{sub 3}O{sub 4} size. We confirmed that the mechanism of hysteresis led to heat loss in the nanometer and micrometer-sized Fe{sub 3}O{sub 4} particles, and it was the key controller of the quantity of heat generated in the Fe{sub 3}O{sub 4} particle-embedded TPU films by induction heating.

Magnetoelectric Bi3.15Nd0.85Ti3O12–NiFe2O4 bilayer films derived by a SOL–GEL method

Directory of Open Access Journals (Sweden)

Feng Yang

2015-08-01

Full Text Available Magnetoelectric Bi3.15Nd0.85Ti3O12–NiFe2O4 (BNT–NFO bilayer films were deposited on Pt/Ti/SiO2/Si(100 substrates by a simple SOL–GEL method and spin-coating process with different growth sequences of BNT and NFO yielding the following layered structures: BNT/NFO/substrate (BNS and NFO/BNT/substrate (NBS. Such heterostructures present simultaneously strong ferroelectric and ferromagnetic responses, as well as magnetoelectric effects at room temperature. BNS thin films showed larger ME voltage coefficient than NBS films, revealing that the layer sequences have a significant influence on the magnetoelectric coupling behavior of these bilayer structures, which may be caused by a interfacial effect.

Polarization-tuned diode behaviour in multiferroic BiFeO3 thin films

KAUST Repository

Yao, Yingbang

2012-12-28

Asymmetric rectifying I-V behaviour of multiferroic BiFeO3 (BFO) thin films grown on transparent ITO-coated glass was quantitatively studied as a function of ferroelectric polarization. Different polarized states were established by unipolar or bipolar poling with various applied electric fields. The effects of polarization relaxation and fatigue on the currents were also investigated. We found that the conduction currents and the associated rectifications were controlled by the amplitude and direction of the polarization. We clearly observed the linear dependence of the current on the polarization. It is suggested that the space-charge-limited conduction and the charge injection at the Schottky interface between the film and the electrodes dominate the current. The electrically controlled rectifying behaviour observed in this study may be useful in nonvolatile resistance memory devices or tunable diodes. © 2013 IOP Publishing Ltd.

Study of structure and properties of oxide electrode materials (Fe3O4, AZO, SRO) and their device applications

Science.gov (United States)

Olga, Chichvarina

Ferroelectric thin film capacitor heterostructures have attracted considerable attention in the last decade because of their potential applications in piezoelectric sensors, actuators, power generators and non-volatile memory devices. Strongly correlated all-perovskite oxide heterojunctions are of a particular interest, as their material properties (electronic, structural, magnetic and optical, etc.) can be tuned via doping, interface effect, applied electrical field, and formation of two-dimensional electron gas (2DEG), etc. The right selection of electrode material for this type of capacitor-like structures may modify and enhance the performance of a device, as the electrode/barrier layer interfaces can significantly influence its macroscopic properties. Although there is a number of reports on the effect of electrode interfaces on the properties of PZT capacitors deposited on SRO buffered STO substrate, very little is known about Fe3O4/PZT and AZO/PZT electrode interfaces. This thesis comprises two parts. In the first part we present a systematic study of the structural, transport, magnetic and optical properties of oxide thin films: AZO, Fe3O4 and SRO. These monolayers were fabricated via pulsed laser deposition technique on quartz, MgO and STO substrates respectively. The second part of this thesis elucidates the behaviour of these three oxides as electrode components in PZT/SRO/STO heteroepitaxial structures. The highlights of the work are summarized below: 1) Zinc-blende (ZB) phase of ZnO was predicted to possess higher values of conductivity and higher doping efficiency compared to its wurzite counterpart and thus has greater chances of facilitating the fabrication of ZnO-electrode-based devices. However, zinc-blende is a metastable phase, and it is challenging to obtain single-phase ZB. To tackle this challenge we tuned parameters such-as film thickness, substrate and annealing effect, and achieved a ZB phase of Ti-doped ZnO, ZB-(Zn1-xTix)O thin film. An

Preparation of c-axis perpendicularly oriented ultra-thin L10-FePt films on MgO and VN underlayers

Science.gov (United States)

Futamoto, Masaaki; Shimizu, Tomoki; Ohtake, Mitsuru

2018-05-01

Ultra-thin L10-FePt films of 2 nm average thickness are prepared on (001) oriented MgO and VN underlayers epitaxially grown on base substrate of SrTiO3(001) single crystal. Detailed cross-sectional structures are observed by high-resolution transmission electron microscopy. Continuous L10-FePt(001) thin films with very flat surface are prepared on VN(001) underlayer whereas the films prepared on MgO(001) underlayer consist of isolated L10-FePt(001) crystal islands. Presence of misfit dislocation and lattice bending in L10-FePt material is reducing the effective lattice mismatch with respect to the underlayer to be less than 0.5 %. Formation of very flat and continuous FePt layer on VN underlayer is due to the large surface energy of VN material where de-wetting of FePt material at high temperature annealing process is suppressed under a force balance between the surface and interface energies of FePt and VN materials. An employment of underlayer or substrate material with the lattice constant and the surface energy larger than those of L10-FePt is important for the preparation of very thin FePt epitaxial thin continuous film with the c-axis controlled to be perpendicular to the substrate surface.

Effects of Annealing Temperature on Structure and Magnetic Properties of TbxY3−xFe5O12 (x=0.2 and 0.4 Thin Films

Directory of Open Access Journals (Sweden)

N. B. Ibrahim

2012-01-01

Full Text Available Terbium-substituted yttrium iron garnet (TbxY3−xFe5O12 (x=0.2 and 0.4 thin films have been successfully prepared by a sol-gel method followed by spin-coating process. The annealing of the films was performed at different temperatures like 700, 800, and 900°C and found that the films annealed at 900°C turned out to be crystallized into a pure garnet phase. All of the films were bearing grains of nanometer in size. Increasing the annealing temperature gave extra energy to the grains causing to be agglomerates. The lattice contraction occurred as the grain’s sizes were decreased due to the decrease of Fe2+ formation. The magnetic measurements show that all of the films are soft magnetic materials with low saturation magnetization values. The hysteresis loops of the films which were annealed at 900°C were found angular in shape similar to the single crystal-like YIG film.

Experimental and theoretical investigation of electronic structure of SrFeO3-xFx epitaxial thin films prepared via topotactic reaction

Science.gov (United States)

Katayama, Tsukasa; Chikamatsu, Akira; Kamisaka, Hideyuki; Kumigashira, Hiroshi; Hasegawa, Tetsuya

2016-02-01

We investigated the electronic structure of perovskite SrFeO3-xFx (0.6 ≤ x ≤ 1) films by optical absorption, photoemission, and X-ray absorption spectroscopies, as well as density functional theory (DFT)-based calculations. The optical bandgap expanded with x, yielding a wider direct bandgap for the SrFeO2F film than for the LaFeO3 film. The DFT calculations suggested that the majority of FeO4F2 octahedra in the SrFeO2F film had cis configurations and that the enlarged bandgap mainly originated from bond bending in the O-Fe-O chains. We experimentally observed the valence and conduction bands of the SrFeO2F film, and found them to be qualitatively consistent with the results of DFT-based calculations.

Probing magnetism and electronic structure of Fe-doped ZnO thin films

International Nuclear Information System (INIS)

El Amiri, A.; Moubah, R.; Lmai, F.; Abid, M.; Hassanain, N.; Hlil, E.K.; Lassri, H.

2016-01-01

Ab-initio calculations using Korringa–Kohn–Rostoker method combined with the coherent potential approximation were performed in order to study the magnetic properties of Fe-doped ZnO thin films with different Fe contents. The extracted parameters are compared with those determined experimentally. Based on total and partial densities of state curves, we demonstrate that there is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions, respectively. The dominant mechanism is found to be antiferromagnetic. However, with increasing Fe content the ferromagnetic contribution increases. In addition, the effect of structural defects on the magnetism of the system is reported. It is shown that both Zn and O vacancies increase ferromagnetism, which is more pronounced in case of Zn. - Highlights: • The KKR–CPA approach was used to study the magnetism of Fe-doped ZnO thin films. • There is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions. • Zn vacancies are more significant than the O ones for obtaining ferromagnetism.

Probing magnetism and electronic structure of Fe-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

El Amiri, A., E-mail: aelamiri@casablanca.ma [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Moubah, R., E-mail: reda.moubah@hotmail.fr [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Lmai, F. [LPTA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Abid, M. [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Hassanain, N. [Laboratoire de Physique des Matériaux, Faculté des Sciences, BP 1014 Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, 38042 Grenoble (France); Lassri, H. [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco)

2016-01-15

Ab-initio calculations using Korringa–Kohn–Rostoker method combined with the coherent potential approximation were performed in order to study the magnetic properties of Fe-doped ZnO thin films with different Fe contents. The extracted parameters are compared with those determined experimentally. Based on total and partial densities of state curves, we demonstrate that there is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions, respectively. The dominant mechanism is found to be antiferromagnetic. However, with increasing Fe content the ferromagnetic contribution increases. In addition, the effect of structural defects on the magnetism of the system is reported. It is shown that both Zn and O vacancies increase ferromagnetism, which is more pronounced in case of Zn. - Highlights: • The KKR–CPA approach was used to study the magnetism of Fe-doped ZnO thin films. • There is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions. • Zn vacancies are more significant than the O ones for obtaining ferromagnetism.

YIG: Bi2O3 Nanocomposite Thin Films for Magnetooptic and Microwave Applications

Directory of Open Access Journals (Sweden)

M. Nur-E-Alam

2015-01-01

Full Text Available Y3Fe5O12-Bi2O3 composite thin films are deposited onto Gd3Ga5O12 (GGG substrates and their annealing crystallization regimes are optimized (in terms of both process temperatures and durations to obtain high-quality thin film layers possessing magnetic properties attractive for a range of technological applications. The amount of bismuth oxide content introduced into these nanocomposite-type films is controlled by adjusting the RF power densities applied to both Y3Fe5O12 and Bi2O3 sputtering targets during the cosputtering deposition processes. The measured material properties of oven-annealed YIG-Bi2O3 films indicate that cosputtering of YIG-Bi2O3 composites can provide the flexibility of application-specific YIG layers fabrication of interest for several existing, emerging, and also frontier technologies. Experimental results demonstrate large specific Faraday rotation (of more than 1°/µm at 532 nm, achieved simultaneously with low optical losses in the visible range and very narrow peak-to-peak ferromagnetic resonance linewidth of around ΔHpp= 6.1 Oe at 9.77 GHz.

Structural parameters and resistive switching phenomenon study on Cd0.25Co0.75Fe2O4 ferrite thin film

International Nuclear Information System (INIS)

Chhaya, U.V.; Gadhvi, M.R.; Mistry, B.V.; Bhavsar, K.H.; Joshi, U.S.; Lakhani, V.K.; Modi, K.B.

2011-01-01

Cadmium substituted cobalt ferrite thin film with nominal composition Cd 0.25 Co 0.75 Fe 2 O 4 , has been grown on quartz substrate by chemical solution deposition and their structural and electrical properties have been investigated. Grazing incidence X-ray diffraction (XRD) confirmed single phase spine) structure with nanometer grain size. Atomic force microscopic analysis revealed uniform nano structured growth of about 70 nm average crystallite size. The XRD data have been used to determine the distribution of cations among the tetrahedral and octahedral sites of the spinel lattice and various structural parameters. The cation distribution determined from X-ray diffraction line intensity calculations revealed, 60% octahedral sites occupancy of Cd 2+ -ions in the composition. Four terminal I-V measurements show hysteretic curves, suggesting high resistance state (HRS) and low resistance state (LRS) in the film with polarity dependence. Maximum resistance ratio, R high /R low of 57% was observed at room temperature in the Ag/Cd 0.25 Co 0.75 Fe 2 O 4 /Ag planar structure. Observed resistance switching is attributed to combined effects, viz., in the LRS, the major fraction of cadmium occupation and electron exchange between Fe 3+ and Fe 2+ at the B-sites, whereas the HRS shows Schottky-like conduction mechanism at the Ag/Cd 0.25 Co 0.75 Fe 2 O 4 interface. (author)

Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material.

Science.gov (United States)

Li, Shun; AlOtaibi, Bandar; Huang, Wei; Mi, Zetian; Serpone, Nick; Nechache, Riad; Rosei, Federico

2015-08-26

Ferroelectric materials have been studied increasingly for solar energy conversion technologies due to the efficient charge separation driven by the polarization induced internal electric field. However, their insufficient conversion efficiency is still a major challenge. Here, a photocathode material of epitaxial double perovskite Bi(2) FeCrO(6) multiferroic thin film is reported with a suitable conduction band position and small bandgap (1.9-2.1 eV), for visible-light-driven reduction of water to hydrogen. Photoelectrochemical measurements show that the highest photocurrent density up to -1.02 mA cm(-2) at a potential of -0.97 V versus reversible hydrogen electrode is obtained in p-type Bi(2) FeCrO(6) thin film photocathode grown on SrTiO(3) substrate under AM 1.5G simulated sunlight. In addition, a twofold enhancement of photocurrent density is obtained after negatively poling the Bi(2) FeCrO(6) thin film, as a result of modulation of the band structure by suitable control of the internal electric field gradient originating from the ferroelectric polarization in the Bi(2) FeCrO(6) films. The findings validate the use of multiferroic Bi(2) FeCrO(6) thin films as photocathode materials, and also prove that the manipulation of internal fields through polarization in ferroelectric materials is a promising strategy for the design of improved photoelectrodes and smart devices for solar energy conversion. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tuning magnetic properties of magnetoelectric BiFeO 3-NiFe 2O 4 nanostructures

Science.gov (United States)

Crane, S. P.; Bihler, C.; Brandt, M. S.; Goennenwein, S. T. B.; Gajek, M.; Ramesh, R.

2009-02-01

Multifunctional thin film nanostructures containing soft magnetic materials such as nickel ferrite are interesting for potential applications in microwave signal processing because of the possibility to shrink the size of device architecture and limit device power consumption. An essential prerequisite to future applications of such a system is a firm understanding of its magnetic properties. We show that nanostructures composed of ferrimagnetic NiFe 2O 4 pillars in a multiferroic BiFeO 3 matrix can be tuned magnetically by altering the aspect ratio of the pillars by depositing films of varying thickness. Magnetic anisotropy is studied using ferromagnetic resonance, which shows that the uniaxial magnetic anisotropy in the growth direction changes sign upon increasing the film thickness. The magnitude of this anisotropy contribution can be explained via a combination of shape and magnetostatic effects, using the object-oriented micromagnetic framework (OOMMF). The key factors determining the magnetic properties of the films are shown to be the aspect ratio of individual pillars and magnetostatic interactions between neighboring pillars.

Tuning magnetic properties of magnetoelectric BiFeO3-NiFe2O4 nanostructures

International Nuclear Information System (INIS)

Crane, S.P.; Bihler, C.; Brandt, M.S.; Goennenwein, S.T.B.; Gajek, M.; Ramesh, R.

2009-01-01

Multifunctional thin film nanostructures containing soft magnetic materials such as nickel ferrite are interesting for potential applications in microwave signal processing because of the possibility to shrink the size of device architecture and limit device power consumption. An essential prerequisite to future applications of such a system is a firm understanding of its magnetic properties. We show that nanostructures composed of ferrimagnetic NiFe 2 O 4 pillars in a multiferroic BiFeO 3 matrix can be tuned magnetically by altering the aspect ratio of the pillars by depositing films of varying thickness. Magnetic anisotropy is studied using ferromagnetic resonance, which shows that the uniaxial magnetic anisotropy in the growth direction changes sign upon increasing the film thickness. The magnitude of this anisotropy contribution can be explained via a combination of shape and magnetostatic effects, using the object-oriented micromagnetic framework (OOMMF). The key factors determining the magnetic properties of the films are shown to be the aspect ratio of individual pillars and magnetostatic interactions between neighboring pillars

Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates

Science.gov (United States)

Shin, Hyun Wook; Son, Jong Yeog

2017-12-01

Multiferroic BiFeO3 (BFO) thin films and nanodots are deposited on highly oriented pyrolytic graphite (HOPG) substrates via a pulsed laser deposition technique, where the HOPG surface has a honeycomb lattice structure made of carbon atoms, similar to graphene. A graphene/BFO/HOPG capacitor exhibited multiferroic properties, namely ferroelectricity (a residual polarization of 26.8 μC/cm2) and ferromagnetism (a residual magnetization of 1.1 × 10-5 emu). The BFO thin film had high domain wall energies and demonstrated switching time of approximately 82 ns. An 8-nm BFO nanodot showed a typical piezoelectric hysteresis loop with an effective residual piezoelectric constant of approximately 110 pm/V and exhibited two clearly separated current curves depending on the ferroelectric polarization direction.

Structural transformation and multiferroic properties of single-phase Bi{sub 0.89}Tb{sub 0.11}Fe{sub 1−x}Mn{sub x}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Dong, Guohua; Tan, Guoqiang, E-mail: tan3114@163.com; Luo, Yangyang; Liu, Wenlong; Ren, Huijun; Xia, Ao

2014-01-30

Pure BiFeO{sub 3} (BFO) and Tb, Mn co-doped BiFeO{sub 3} (BTFMO) thin films were deposited on SnO{sub 2}: F (FTO)/glass substrates using a chemical solution deposition method. Detailed investigations were made on the influence of (Tb, Mn) co-doping on the structure change and the electric properties of the BFO films. With the co-doping of Tb and Mn, the structural transformation from rhombohedral R3c to triclinic P1 is confirmed through XRD, Rietveld refinement and Raman analysis. XPS analysis clarifies that (Tb, Mn) co-doping avails to decrease oxygen vacancy concentration, showing less Fe{sup 2+} ions in the co-doped BTFMO thin films than that of the pure BFO thin film. Among the co-doped thin films, the BTFM{sub 1}O film shows the highly enhanced ferroelectric properties with a giant remnant polarization value (2P{sub r} = 180.3 μC/cm{sup 2}). The structural transformation, the well-distributed fine grains and the reduction of leakage current favor enhanced ferroelectric property of (Tb, Mn) co-doped BFO films. It is also found that the BTFM{sub 1}O film shows the enhanced ferromagnetism with the saturated magnetization (M{sub s} = 2.5 emu/cm{sup 3}) as a result of the collapse of space modulated spin structure by the structure transformation.

Low-temperature conducting channel switching in hybrid Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si structures

Energy Technology Data Exchange (ETDEWEB)

Vikulov, V.A., E-mail: vikulov@iacp.dvo.ru [Institute of Automation and Control Processes, FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Dimitriev, A.A.; Balashev, V.V.; Pisarenko, T.A.; Korobtsov, V.V. [Institute of Automation and Control Processes, FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

2016-09-15

Highlights: • Conducting channel switching between the polycrystalline Fe{sub 3}O{sub 4} film and the n-Si substrate takes place in the Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si structure at temperature below 125 K. • This effect occurs via the field-assisted tunneling through the composite insulating layer that consists of the highly resistive Fe{sub 3}O{sub 4} and the tunnel SiO{sub 2}. • The switching is attended by a change in the shape of the current-voltage characteristics from the linear at 300 K to the S-type at 80 K. - Abstract: The carrier transport properties of the polycrystalline magnetite (Fe{sub 3}O{sub 4}) films grown on an n-type Si substrate with 5 nm-thick SiO{sub 2} have been investigated between 80 and 300 K in current-in-plane geometry. It was established that at temperature decrease to about 120 K, the resistivity of thin Fe{sub 3}O{sub 4} films increases up to a peak value and then abruptly drops. This process is attended by a change in the shape of the current-voltage characteristics from the linear at 300 K to the S-type at 80 K. The observed peculiarities are explained by conducting channel switching from the Fe{sub 3}O{sub 4} film to the Si substrate via the field-assisted tunneling of carriers through the composite insulating layer consisting of highly resistive Fe{sub 3}O{sub 4} and tunnel SiO{sub 2}.

Fast-LPG Sensors at Room Temperature by α-Fe2O3/CNT Nanocomposite Thin Films

Directory of Open Access Journals (Sweden)

B. Chaitongrat

2018-01-01

Full Text Available We present performance of a room temperature LPG sensor based on α-Fe2O3/CNT (carbon nanotube nanocomposite films. The nanocomposite film was fabricated via the metallic Fe catalyst particle on CNTs in which both the catalyst particles and the CNT were simultaneously synthesized by chemical vapor deposition (CVD synthesis and were subsequently annealed in air to create α-Fe2O3. These methods are simple, inexpensive, and suitable for large-scale production. The structure, surface morphologies, and LPG response of nanocomposite films were investigated. Raman spectroscopy and XPS analysis showed the formation of α-Fe2O3 on small CNTs (SWNTs. Morphological analysis using FE-SEM and AFM revealed the formation of the porous surface along with roughness surface. Additionally, the sensing performance of α-Fe2O3/CNTs showed that it could detect LPG concentration at lower value than 25% of LEL with response/recovery time of less than 30 seconds at room temperature. These results suggest that the α-Fe2O3/CNTs films are challenging materials for monitoring LPG operating at room temperature.

alpha-Fe2O3 versus beta-Fe2O3: Controlling the Phase of the Transformation Product of epsilon-Fe2O3 in the Fe2O3/SiO2 System

Czech Academy of Sciences Publication Activity Database

Brázda, Petr; Kohout, J.; Bezdička, Petr; Kmjec, T.

2014-01-01

Roč. 14, č. 3 (2014), s. 1039-1046 ISSN 1528-7483 R&D Projects: GA ČR GAP204/10/0035 Institutional support: RVO:61388980 Keywords : CHEMICAL-VAPOR-DEPOSITION * OXIDE THIN-FILMS * X-RAY * GAMMA-FE2O3 NANOPARTICLES * THERMAL-DECOMPOSITION Subject RIV: CA - Inorganic Chemistry Impact factor: 4.891, year: 2014

Electrosynthesis and characterization of Fe doped CdSe thin films from ethylene glycol bath

International Nuclear Information System (INIS)

Pawar, S.M.; Moholkar, A.V.; Rajpure, K.Y.; Bhosale, C.H.

2007-01-01

The CdSe and Fe doped CdSe (Fe:CdSe) thin films have been electrodeposited potentiostatically onto the stainless steel and fluorine doped tin oxide (FTO) glass substrates, from ethylene glycol bath containing (CH 3 COO) 2 .Cd.2H 2 O, SeO 2 , and FeCl 3 at room temperature. The doping concentration of Fe is optimized by using (photo) electrochemical (PEC) characterization technique. The deposition mechanism and Fe incorporation are studied by cyclic voltammetry. The structural, surface morphological and optical properties of the deposited CdSe and Fe:CdSe thin films have been studied by X-ray diffraction, scanning electron microscopy (SEM) and optical absorption techniques respectively. The PEC study shows that Fe:CdSe thin films are more photosensitive than that of undoped CdSe thin films. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure. SEM studies reveal that the films with uniformly distributed grains over the entire surface of the substrate. The complete surface morphology has been changed after doping. Optical absorption study shows the presence of direct transition and a considerable decrease in bandgap, E g from 1.95 to 1.65 eV

Structural features of epitaxial NiFe2O4 thin films grown on different substrates by direct liquid injection chemical vapor deposition

Science.gov (United States)

Datta, R.; Loukya, B.; Li, N.; Gupta, A.

2012-04-01

NiFe2O4 (NFO) thin films are grown on four different substrates, i.e., Lead Zinc Niobate-Lead Titanate (PZN-PT), Lead Magnesium Niobate-Lead Titanate (PMN-PT), MgAl2O4 (MAO) and SrTiO3 (STO), by a direct liquid injection chemical vapor deposition technique (DLI-CVD) under optimum growth conditions where relatively high growth rate (˜20 nm/min), smooth surface morphology and high saturation magnetization values in the range of 260-290 emu/ cm3 are obtained. The NFO films with correct stoichiometry (Ni:Fe=1:2) grow epitaxially on all four substrates, as confirmed by energy dispersive X-ray spectroscopy, transmission electron microscopy and x-ray diffraction. While the films on PMN-PT and PZN-PT substrates are partially strained, essentially complete strain relaxation occurs for films grown on MAO and STO. The formations of threading dislocations along with dark diffused contrast areas related to antiphase domains having a different cation ordering are observed on all four substrates. These crystal defects are correlated with lattice mismatch between the film and substrate and result in changes in magnetic properties of the films. Atomic resolution HAADF imaging and EDX line profiles show formation of a sharp interface between the film and the substrate with no inter-diffusion of Pb or other elements across the interface. Antiphase domains are observed to originate at the film-substrate interface.

Influence of Co doping on structural, optical and magnetic properties of BiFeO3 films deposited on quartz substrates by sol-gel method

Science.gov (United States)

Peng, Lin; Deng, Hongmei; Tian, Jianjun; Ren, Qing; Peng, Cheng; Huang, Zhipeng; Yang, Pingxiong; Chu, Junhao

2013-03-01

Multiferroic BiFe1-xCoxO3 (x = 0, 0.03, 0.05, 0.1) thin films have been prepared on quartz substrates using a sol-gel technique. X-ray diffraction data confirms that Co atoms have been successfully incorporated into the host lattice. The scanning electron microscopy (SEM) exhibits that the surface morphologies of BiFe0.97Co0.03O3 and BiFe0.95Co0.05O3 thin films become more compact and uniform. With increasing Co dopant, the position of A1-1 and E-4 modes shift towards the lower wavenumber indicates that Co doping induces structural distortion of BiFeO3. With increasing Co composition, the fundamental absorption edges of BiFe1-xCoxO3 films show red shift. Furthermore, transmittance spectra demonstrates that the optical band gap of BiFe1-xCoxO3 films decreases from 2.66 eV to 2.53 eV with the increase of Co from x = 0 to 0.1. At the wavelength of 720 nm, the refractive index decreases and the extinction coefficient increases with increasing the amount of Co. Optical properties reveal that Co doping in BiFeO3 provides preliminary research for optoelectronic devices and infrared detectors. Compared with BiFeO3 prepared under similar conditions, the remanent magnetization Mr of BiFe1-xCoxO3 (x = 0.03, 0.05, 0.1) thin films significantly enhanced, which provides potential applications in information storage.

Room-Temperature Multiferroics and Thermal Conductivity of 0.85BiFe1-2xTixMgxO3-0.15CaTiO3 Epitaxial Thin Films (x = 0.1 and 0.2).

Science.gov (United States)

Zhang, Ji; Sun, Wei; Zhao, Jiangtao; Sun, Lei; Li, Lei; Yan, Xue-Jun; Wang, Ke; Gu, Zheng-Bin; Luo, Zhen-Lin; Chen, Yanbin; Yuan, Guo-Liang; Lu, Ming-Hui; Zhang, Shan-Tao

2017-08-02

Thin films of 0.85BiFe 1-2x Ti x Mg x O 3 -0.15CaTiO 3 (x = 0.1 and 0.2, abbreviated to C-1 and C-2, respectively) have been fabricated on (001) SrTiO 3 substrate with and without a conductive La 0.7 Sr 0.3 MnO 3 buffer layer. The X-ray θ-2θ and ϕ scans, atomic force microscopy, and cross-sectional transmission electron microscopy confirm the (001) epitaxial nature of the thin films with very high growth quality. Both the C-1 and C-2 thin films show well-shaped magnetization-magnetic field hysteresis at room temperature, with enhanced switchable magnetization values of 145.3 and 42.5 emu/cm 3 , respectively. The polarization-electric loops and piezoresponse force microscopy measurements confirm the room-temperature ferroelectric nature of both films. However, the C-1 films illustrate a relatively weak ferroelectric behavior and the poled states are easy to relax, whereas the C-2 films show a relatively better ferroelectric behavior with stable poled states. More interestingly, the room-temperature thermal conductivity of C-1 and C-2 films are measured to be 1.10 and 0.77 W/(m·K), respectively. These self-consistent multiferroic properties and thermal conductivities are discussed by considering the composition-dependent content and migration of Fe-induced electrons and/or charged point defects. This study not only provides multifunctional materials with excellent room-temperature magnetic, ferroelectric, and thermal conductivity properties but may also stimulate further work to develop BiFeO 3 -based materials with unusual multifunctional properties.

Epitaxial growth and magnetic properties of Fe4-xMnxN thin films grown on MgO(0 0 1) substrates by molecular beam epitaxy

Science.gov (United States)

Anzai, Akihito; Takata, Fumiya; Gushi, Toshiki; Toko, Kaoru; Suemasu, Takashi

2018-05-01

Epitaxial Fe4-xMnxN (x = 0, 1, 2, 3, and 4) thin films were successfully grown on MgO(0 0 1) single-crystal substrates by molecular beam epitaxy, and their crystalline qualities and magnetic properties were investigated. It was found that the lattice constants of Fe4-xMnxN obtained from X-ray diffraction measurement increased with the Mn content. The ratio of the perpendicular lattice constant c to the in-plane lattice constant a of Fe4-xMnxN was found to be about 0.99 at x ⩾ 2. The magnetic properties evaluated using a vibrating sample magnetometer at room temperature revealed that all of the Fe4-xMnxN films exhibited ferromagnetic behavior regardless of the value of x. In addition, the saturation magnetization decreased non-linearly as the Mn content increased. Finally, FeMn3N and Mn4N exhibited perpendicular anisotropy and their uniaxial magnetic anisotropy energies were 2.2 × 105 and 7.5 × 105 erg/cm3, respectively.

Structural characterization of PbTi03, Sm0.6Nd0.4NiO3 and NdMnO3 multifunctional Perovskite thin films

Directory of Open Access Journals (Sweden)

Rapenne L.

2012-06-01

Full Text Available Different multifunctional (PbTiO3, Sm0.6Nd0.4NiO3, NdMnO3 thin films were grown by metalorganic chemical vapor deposition (MOCVD technique on SrTiO3 and LaAlO3 substrates. TEM and X-ray diffraction measurements reveal that almost single crystalline thin films can be epitaxially grown on the top of substrates. The relationship between the crystallographic orientation of the films and those of the substrates were determined by reciprocal space mapping and TEM analyses. PbTi03 thin films appear to be under tensile or compressive strain according to the different mismatch of their cell parameter with those of the substrate. Relaxation mechanism as a function of the film thickness arises from coexistence of different type of domains and size and strain effect are analyzed. SmNiO3 thin films present diffuse scattering strikes and are less well organized when compared to PbTi03 thin films. Different domains are observed as well as an additional parasitic phase close to NiO. Its regular distribution can be associated to reduced transport properties. Preliminary observations on NdMnO3 thin films show that an amorphous phase is obtained during MOCVD that can be transformed in a single crystalline film by annealing. The films are under tensile or compressive strain according to the different mismatch of their cell parameter with those of the substrate. Magnetic properties are investigated.

Characterization of nanostructured Mn{sub 3}O{sub 4} thin films grown by SILAR method at room temperature

Energy Technology Data Exchange (ETDEWEB)

Ubale, A.U., E-mail: ashokuu@yahoo.com [Nanostructure Thin Film Materials Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, VMV Road, Amravati 444604, Maharashtra (India); Belkhedkar, M.R. [Department of Physics, Shri Shivaji College, Akola 444003, Maharashtra (India); Sakhare, Y.S. [Nanostructure Thin Film Materials Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, VMV Road, Amravati 444604, Maharashtra (India); Singh, Arvind [National Centre for Nanomaterials and Nanotechnology, University of Mumbai, Santacruz, Mumbai, Maharashtra (India); Gurada, Chetan; Kothari, D.C. [Department of Physics, University of Mumbai, Santacruz, Mumbai, Maharashtra (India)

2012-10-15

A novel successive ionic layer adsorption and reaction method has been successfully employed to grow nanostructured conducting nearly transparent thin films of Mn{sub 3}O{sub 4} on to glass substrates at room temperature using MnCl{sub 2} and NaOH as cationic and anionic precursors. The structural and morphological characterizations of the as deposited Mn{sub 3}O{sub 4} films have been carried out by means of X-ray diffraction (XRD), Field Emission Scanning Electron Micrograph (FESEM), EDAX, Atomic Fore Microscopy (AFM) and Fourier Transform Infrared Spectrum (FTIR) analysis. The optical absorption and electrical resistivity measurements were carried out to investigate optical band gap and activation energy of Mn{sub 3}O{sub 4} films deposited by SILAR method. The optical band gap and activation energy of the as deposited film is found to be 2.70 and 0.14 eV respectively. The thermo-emf measurements of Mn{sub 3}O{sub 4} thin film confirm its p-type semiconducting nature. Highlights: Black-Right-Pointing-Pointer Nanostructured Mn{sub 3}O{sub 4} thin film is prepared by SILAR method at room temperature. Black-Right-Pointing-Pointer The film is nanocrystalline with orthorhombic structure of Mn{sub 3}O{sub 4}. Black-Right-Pointing-Pointer The XRD, FTIR, FESEM, EDX and AFM characterization confirms nanocrystalline nature. Black-Right-Pointing-Pointer Optical band gap, electrical resistivity and activation energy of film is reported. Black-Right-Pointing-Pointer A thermo-emf measurement confirms p-type conductivity of Mn{sub 3}O{sub 4} films.

Room Temperature Tunable Multiferroic Properties in Sol-Gel-Derived Nanocrystalline Sr(Ti1−xFexO3−δ Thin Films

Directory of Open Access Journals (Sweden)

Yi-Guang Wang

2017-09-01

Full Text Available Sr(Ti1−xFexO3−δ (0 ≤ x ≤ 0.2 thin films were grown on Si(100 substrates with LaNiO3 buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1−xFexO3−δ thin films, were investigated by using the X-ray diffractometer (XRD, atomic force microscopy (AFM, the ferroelectric test system, and the vibrating sample magnetometer (VSM. After substituting a small amount of Ti ion with Fe, highly enhanced ferroelectric properties were obtained successfully in SrTi0.9Ti0.1O3−δ thin films, with a double remanent polarization (2Pr of 1.56, 1.95, and 9.14 μC·cm−2, respectively, for the samples were annealed in air, oxygen, and nitrogen atmospheres. The leakage current densities of the Fe-doped SrTiO3 thin films are about 10−6–10−5 A·cm−2 at an applied electric field of 100 kV·cm−1, and the conduction mechanism of the thin film capacitors with various Fe concentrations has been analyzed. The ferromagnetic properties of the Sr(Ti1−xFexO3−δ thin films have been investigated, which can be correlated to the mixed valence ions and the effects of the grain boundary. The present results revealed the multiferroic nature of the Sr(Ti1−xFexO3−δ thin films. The effect of the annealing environment on the room temperature magnetic and ferroelectric properties of Sr(Ti0.9Fe0.1O3−δ thin films were also discussed in detail.

Effect of the thickness reduction on the structural, surface and magnetic properties of α-Fe{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Aragón, Fermin F.H., E-mail: fherrera@fis.unb.br [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Ardisson, José D. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Aquino, Juan C.R. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Gonzalez, Ismael; Macedo, Waldemar A.A. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Coaquira, José A.H.; Mantilla, John; Silva, Sebastião W. da; Morais, Paulo C. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil)

2016-05-31

Hematite (α-Fe{sub 2}O{sub 3}) polycrystalline thin films of different thicknesses were produced by thermal oxidation in air atmosphere from Fe metallic thin-films deposited by radio frequency (RF) sputtering technique. X-ray diffraction (XRD) patterns confirm the formation of hematite phase in all samples and indicate that the mean grain size decreases as the film thickness becomes thinner. Conversion electron Mössbauer spectroscopy (CEMS) spectra at room temperature show magnetic splitting (six line patterns). It is determined that the resonance peaks become broader and asymmetric as the film thickness decreases. This finding was associated with the structural disorder introduced by the thickness reduction. Magnetization as a function of the magnetic field curve obtained at 300 K shows the presence of a weak-ferromagnetic contribution, which was assigned to the large density of decompensated spins at the films surface. From the magnetization vs. temperature curves it has been determined that the Morin transition temperature (T{sub M}) is shifted from ~ 240 K to ~ 196 K, meanwhile it becomes more broadened as the film thickness decreases. X-ray photoelectron spectroscopy (XPS) measurements show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions whose population increases as the film becomes thinner. The density of chemisorbed oxygen increases as the film thickness is reduced in agreement with the results obtained from the other measurements in this work. - Highlights: • Hematite thin films with different thickness were deposited by RF sputtering technique. • X-ray diffraction patterns confirm the formation of hematite phase in all samples. • Hysteresis curve at 300 K shows the presence of a weak-ferromagnetic phase. • XPS show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions.

The effect of Cr substitution on the structural, electronic and magnetic properties of pulsed laser deposited NiFe{sub 2}O{sub 4} thin films

Energy Technology Data Exchange (ETDEWEB)

Panwar, Kalpana [Department of Physics, Govt. Women Engineering College, Ajmer, 305002 India (India); Department of Pure and Applied Physics, University of Kota, Kota, 324010 India (India); Tiwari, Shailja, E-mail: tiwari_shailja@rediffmail.com [Department of Physics, Govt. Women Engineering College, Ajmer, 305002 India (India); Bapna, Komal [Department of Physics, M. L. Sukhadia University, Udaipur, 313001 India (India); Heda, N.L. [Department of Pure and Applied Physics, University of Kota, Kota, 324010 India (India); Choudhary, R.J.; Phase, D.M. [UGC-DAE Consortium for Scientific Research, University Campus, Indore, 452001 India (India); Ahuja, B.L. [Department of Physics, M. L. Sukhadia University, Udaipur, 313001 India (India)

2017-01-01

We have studied the structural, electronic and magnetic properties of pulsed laser deposited thin films of Ni{sub 1−x}Cr{sub x}Fe{sub 2}O{sub 4} (x=0.02 and 0.05) on Si (111) and Si (100) substrates. The films reveal single phase, polycrystalline structure with larger grain size on Si (111) substrate than that on Si (100) substrate. Contrary to the expected inverse spinel structure, x-ray photoemission (XPS) studies reveal the mixed spinel structure. XPS results suggest that Ni and Fe ions exist in 2+ and 3+ states, respectively, and they exist in tetrahedral as well as octahedral sites. The deviation from the inverse spinel leads to modified magnetic properties. It is observed that saturation magnetization drastically drops compared to the expected saturation value for inverse spinel structure. Strain in the films and lattice distortion produced by the Cr doping also appear to influence the magnetic properties. - Highlights: • Thin films of Ni{sub 1−x}Cr{sub x}Fe{sub 2}O{sub 4} are grown on Si(111) and Si(100) substrates. • Films on Si(111) substrate are better crystalline than those on Si(100). • XRD and FTIR results confirm the single phase growth of the films. • Cationic distribution deviates from inverse spinel structure, as revealed by XPS. • Saturation magnetization is larger on Si(100) but lower than the bulk value.

Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method

Science.gov (United States)

Gupta, Shashaank; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai; Bansal, Vipul; Bhargava, Suresh K.; Peng, Ju Lin; Garg, Ashish

2011-07-01

We report an unusual behavior observed in (BiFeO3)1- x -(PbTiO3) x (BF- xPT) thin films prepared using a multilayer chemical solution deposition method. Films of different compositions were grown by depositing several bilayers of BF and PT precursors of varying BF and PT layer thicknesses followed by heat treatment in air. X-ray diffraction showed that samples of all compositions show mixing of two compounds resulting in a single-phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk compositions, samples show a monoclinic (MA-type) structure suggesting disappearance of the morphotropic phase boundary (MPB) at x=0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of the remanent polarization at the MPB, as shown by the ferroelectric measurements. Magnetic measurements showed an increase in the magnetization of the samples with increasing BF content. Significant magnetization in the samples indicates melting of spin spirals in the BF- xPT films, arising from a random distribution of iron atoms. Absence of Fe2+ ions was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that thin film processing methodology significantly changes the structural evolution, in contrast to predictions from the equilibrium phase diagram, besides modifying the functional characteristics of the BP- xPT system dramatically.

Chemical solution deposition of CaCu 3 Ti 4 O 12 thin film

Indian Academy of Sciences (India)

CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron ...

Oxygen vacancy induced magnetization switching in Fe{sub 3}O{sub 4} epitaxial ultrathin films on GaAs(100)

Energy Technology Data Exchange (ETDEWEB)

Huang, Zhaocong, E-mail: zhaocong.huang@gmail.com [Department of Physics, Southeast University, Nanjing 211189 (China); Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO10 5DD (United Kingdom); School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Chen, Qian; Zhai, Ya, E-mail: yazhai@seu.edu.cn, E-mail: jlwang@seu.edu.cn; Wang, Jinlan, E-mail: yazhai@seu.edu.cn, E-mail: jlwang@seu.edu.cn [Department of Physics, Southeast University, Nanjing 211189 (China); Xu, Yongbing [Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO10 5DD (United Kingdom); Wang, Baoping [School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

2015-05-04

The magnetic and transport properties of half metallic Fe{sub 3}O{sub 4}, which are sensitive to the stoichiometry, are the key issue for applications in spintronics. An anomalous enlargement of the saturation magnetic moment is found in a relatively thick sample of epitaxial Fe{sub 3}O{sub 4} film by post-growth oxidation method. The investigation of the thickness dependence of magnetic moment suggests that the enhanced magnetism moment may come from the existence of oxygen vacancies. First-principles calculations reveal that with oxygen vacancies in Fe{sub 3}O{sub 4} crystal the spin of Fe ions in the tetrahedron site near the vacancy is much easier to switch parallel to the Fe ions in the octahedron site by temperature disturbance, supported by the temperature dependence of magnetic moment of Fe{sub 3}O{sub 4} films in experiment.

Photoluminescence properties of BaMoO4 amorphous thin films

International Nuclear Information System (INIS)

Marques, Ana Paula Azevedo; Melo, Dulce M.A. de; Longo, Elson; Paskocimas, Carlos A.; Pizani, Paulo S.; Leite, Edson R.

2005-01-01

BaMoO 4 amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO 4 was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance. The bond Mo-O present in BaMoO 4 was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 deg. C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 deg. C. The reflectivity spectra showed two bands, positioned at 3.38 and 4.37 eV that were attributed to the excitonic state of Ba 2+ and electronic transitions within MoO 2- 4 , respectively. The optical band gaps of BaMoO 4 were 3.38 and 2.19 eV, for crystalline (600 deg. C/2 h) and amorphous (200 deg. C/8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission band in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO 4 amorphous thin films suggested that this material is a highly promising candidate for photoluminescent applications

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

Science.gov (United States)

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Temperature-dependent anisotropic magnetoresistance inversion behaviors in Fe{sub 3}O{sub 4} films

Energy Technology Data Exchange (ETDEWEB)

Yoon, Kap Soo [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2017-02-01

We address the abnormal anisotropic magnetoresistance (AMR) reversal feature of half-metallic polycrystalline Fe{sub 3}O{sub 4} films occurring at a specific temperature. Experimental results revealed a positive to negative MR transition in the Fe{sub 3}O{sub 4} films at 264 K, which reflect the influence of additional domain wall scattering. These features was described by a correlation between domain wall resistance and inversion behavior of AMR with additional domain wall scattering factors. We further describe a possible model based on systematic structural and electrical measurements that employs a temperature-dependent domain wall width and spin diffusion length of the conducting electrons. This model allows for spin-flipping scattering of spin polarized electrons inside a proper domain width.

A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

International Nuclear Information System (INIS)

Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

2012-01-01

Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

A novel chemical synthesis and characterization of Mn{sub 3}O{sub 4} thin films for supercapacitor application

Energy Technology Data Exchange (ETDEWEB)

Dubal, D.P.; Dhawale, D.S.; Salunkhe, R.R. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S) (India); Pawar, S.M. [Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S) (India)

2010-05-01

Mn{sub 3}O{sub 4} thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), field emission scanning electron microscopy (FESEM), wettability test and optical absorption studies. The XRD pattern showed that the Mn{sub 3}O{sub 4} films exhibit tetragonal hausmannite structure. Formation of manganese oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.30 eV. Mn{sub 3}O{sub 4} film surface showed hydrophilic nature with water contact angle of 55{sup o}. The supercapacitive properties of Mn{sub 3}O{sub 4} thin film investigated in 1 M Na{sub 2}SO{sub 4} electrolyte showed maximum supercapacitance of 314 F g{sup -1} at scan rate 5 mV s{sup -1}.

Chemically fabricated LiFePO{sub 4} thin film electrode for transparent batteries and electrochromic devices

Energy Technology Data Exchange (ETDEWEB)

Béléké, Alexis B. [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Department of Mining and Materials Engineering, McGill University, M.H. Wong Building, 3610 rue University, Montréal, QC H3A 2B2 (Canada); Faure, Cyril [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Röder, Manuel [Center for Applied Electrochemistry, Fraunhofer Institute for Silicate Research, Neunerplatz 2, 97083 Würzburg (Germany); Hovington, Pierre [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Posset, Uwe [Center for Applied Electrochemistry, Fraunhofer Institute for Silicate Research, Neunerplatz 2, 97083 Würzburg (Germany); Guerfi, Abdelbast [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada); Zaghib, Karim, E-mail: zaghib.karim@ireq.ca [Institut de recherche d’Hydro-Québec, 1800 Boul. Lionel-Boulet, Varennes, QC J3X 1S3 (Canada)

2016-12-15

Graphical abstract: Simplified diagram of the novel sol-gel approach of preparation of colorless and transparent LiFePO{sub 4} thin film electrode. - Highlights: • Novel sol-gel synthesis of colorless LFP thin film electrode for transparent Li-ion battery. • High performance of the electrode at various current densities: 5, 10, 20, 50 and 100 μA/cm{sup 2}. • LFP nanoparticles exhibit an excellent electro-activity. • Colorless LFP thin film shows a transmittance above 80% versus FTO. • Higher transmittance of LFP electrode a potential candidate for electrochromic devices. - Abstract: We report a new sol-gel approach of synthesis of LiFePO{sub 4} (LFP) thin film and its application as cathode materials for transparent Li-ion battery in half-cell configuration. LFP thin films were obtained from an alcoholic colloidal suspension of iron acetylacetonate (Fe(AcAc){sub 3}) and aqueous lithium dihydrogen phosphate (LiH{sub 2}PO{sub 4}) deposited on fluorine tin oxide (FTO) glass substrate, followed by heating at 450 °C under nitrogen gas for 1 h. X-ray diffraction (XRD) confirmed that the LFP films have an orthorhombic crystal system with space group Pnma (62). Scanning electron microscopy (SEM) shows spherical LFP nanoparticles aggregates homogenously deposited all over the surface of FTO substrate containing 3-D open pores. The electrochemical behaviors of thin film vs Li/Li{sup +} cell were investigated by cyclic voltammetry and galvanostatic charge-discharge measurements. The cycle life was evaluated by running 1000 cycles of charge-discharge at a current density of 20 μA/cm{sup 2}. The transmission spectra reveal 85–90% of transparency versus FTO as reference, which makes it a potential candidate as a complementary electrode in electrochromic devices (ECDs).

Effect of cerium substitution on microstructure and Faraday rotation of Ce{sub x}Y{sub 3-x}Fe{sub 5}O{sub 12} thin films

Energy Technology Data Exchange (ETDEWEB)

Shahrokhvand, S.M.; Mozaffari, M.; Rozatian, A.S.H. [University of Isfahan, Department of Physics, Faculty of Science, Isfahan (Iran, Islamic Republic of); Hamidi, S.M. [Shahid Beheshti University, Laser and Plasma Research Institute, Evin, Tehran (Iran, Islamic Republic of); Tehranchi, M.M. [Shahid Beheshti University, Laser and Plasma Research Institute, Evin, Tehran (Iran, Islamic Republic of); Shahid Beheshti University, Department of Physics, Evin, Tehran (Iran, Islamic Republic of)

2016-01-15

In this work, cerium-substituted yttrium iron garnet (Ce{sub x}Y{sub 3-x}Fe{sub 5}O{sub 12}, x = 0.25-1) targets were fabricated by conventional ceramic method at different temperatures, and their crystal structures were investigated by X-ray diffraction method. The results showed that the minimum calcining temperature required to get single-phase targets depends on x value and decreased by increasing x value. Then, thin films of the targets were deposited on GGG (444) single-crystal substrates by pulsed laser deposition technique. Based on the previous studies, preferred (444) oriented Ce{sub x}Y{sub 3-x}Fe{sub 5}O{sub 12} thin films were fabricated under optimum conditions. Faraday rotation of the thin films was measured at 635 nm wavelength, and the results showed that Faraday rotation and sensitivity constant increased by increasing x value. Scanning electron microscope images showed that by increasing x value, cracks on the thin films' surface increased. Atomic force microscopy images showed that the films have smooth surfaces and the surface roughness decreased by increasing the x value. (orig.)

Chemical vapor deposition and electric characterization of perovskite oxides LaMO3 (M=Co, Fe, Cr and Mn) thin films

International Nuclear Information System (INIS)

Ngamou, Patrick Herve Tchoua; Bahlawane, Naoufal

2009-01-01

Oxides with a perovskite structure are important functional materials often used for the development of modern devices. In view of extending their applicability, it is necessary to efficiently control their growth as thin films using technologically relevant synthesis methods. Pulsed spray evaporation CVD was used to grow several perovskite-type oxides on planar silicon substrates at temperatures ranging from 500 to 700 deg. C. The optimization of the process control parameters allows the attainment of the perovskite structure as a single phase. The electrical characterization using the temperature-dependent conductivity and thermopower indicates the p-type conduction of the grown films and shows a decreasing concentration of the charge carrier, mobility and band gap energy in the sequence LaCoO 3 >LaMnO 3 >LaCrO 3 >LaFeO 3 . The investigation of the electric properties of the obtained perovskite thin films shows the versatility of CVD as a method for the development of innovative devices. - Graphical abstract: We report a single step deposition of perovskite thin films LaMO 3 (M: Co, Mn, Cr, Fe) using pulsed spray evaporation chemical vapor deposition. Electrical and thermopower properties, similar to these of bulk materials, could promote the development of modern thermoelectric devices based on thin films technology.

Microstructure and electric characteristics of AETiO3 (AE=Mg, Ca, Sr doped CaCu3Ti4O12 thin films prepared by the sol–gel method

Directory of Open Access Journals (Sweden)

Dong Xu

2015-10-01

Full Text Available This paper focuses on the effects of alkline-earth metal titante AETiO3 (AE=Mg, Ca, Sr doping on the microstructure and electric characteristics of CaCu3Ti4O12 thin films prepared by the sol–gel method. The results showed that the grain size of CCTO thin films could be increased by MgTiO3 doping. The movement of the grain boundaries was impeded by the second phases of CaTiO3 and SrTiO3 concentrating at grain boundaries in CaTiO3 and SrTiO3 doped CCTO thin films. Rapid ascent of dielectric constant could be observed in 0.1Mg TiO3 doped CCTO thin films, which was almost as three times high as pure CCTO thin film and the descent of the dielectric loss at low frequency could also be observed. In addition, the nonlinear coefficient (α, threshold voltage (VT and leakage current (IL of AETiO3 doped CCTO thin films (AE=Mg, Ca, Sr showed different variation with the increasing content of the MgTiO3, CaTiO3 and SrTiO3.

Effect of annealing temperature on the magnetoelectric properties of CoFe{sub 2}O{sub 4}/Pt/Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} multilayer films

Energy Technology Data Exchange (ETDEWEB)

Eum, You Jeong; Hwang, Sung Ok; Koo, Chang Young; Lee, Jai Yeoul; Lee, Hee Young [Yeungnam University, Gyeongsan (Korea, Republic of); Ryu, Jung Ho [Korea Institute of Materials Science, Changwon (Korea, Republic of); Park, Jung Min [Osaka University, Osaka (Japan)

2014-08-15

CoFe{sub 2}O{sub 4}(CoFO)/Pt/Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) multilayer films were grown on Pt/Ti/SiO{sub 2}/Si substrates. A thin Pt layer was inserted between the ferrimagnetic and the ferroelectric layers in order to suppress diffusion at high temperatures and thereby to prevent possible interfacial reactions. The effect of annealing on the film's microstructure and multiferroic properties was then investigated using thin film stacks heat-treated at temperatures ranging from 550 to 650 .deg. C. The magnetoelectric coefficients were calculated from the magnetoelectric voltages measured using a magnetoelectric measurement system. The effect of annealing temperature on the magnetoelectric coupling in the CoFO/Pt/PZT multilayer thin film is discussed in detail.

Tailoring the magnetic properties and thermal stability of FeSiAl-Al{sub 2}O{sub 3} thin films fabricated by hybrid oblique gradient-composition sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhong, Xiaoxi, E-mail: xiaoxi.zhong@gmail.com [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China); Phuoc, Nguyen N. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, 117411 Singapore (Singapore); Soh, Wee Tee [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive3, 117542 Singapore (Singapore); Ong, C.K. [Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, 117411 Singapore (Singapore); Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive3, 117542 Singapore (Singapore); Peng, Long; Li, Lezhong [Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225 (China)

2017-05-01

In this study, we systematically investigate the dynamic magnetic properties of FeSiAl-Al{sub 2}O{sub 3} thin films fabricated by hybrid oblique gradient-composition sputtering technique with respect to temperature ranging from 300 K to 420 K. The magnetic anisotropy field H{sub K} and ferromagnetic resonance frequency f{sub FMR} can be tuned from 14.06 to 110.18 Oe and 1.05–3.05 GHz respectively, by changing the oblique angle, which can be interpreted in terms of the contribution of stress-induced anisotropy and shape anisotropy. In addition, the thermal stability of FeSiAl-Al{sub 2}O{sub 3} films in terms of magnetic anisotropy H{sub K} and ferromagnetic resonance frequency f{sub FMR} are enhanced with the increase of oblique angle up to 35° while the thermal stability of effective Gilbert damping factor α{sub eff} and the maximum imaginary permeability μ’’{sub max} are improved with the increase of oblique angle up to 45°. - Highlights: • We prepared FeSiAl-based thin films using hybrid oblique gradient-composition deposition technique. • The microwave properties of FeSiAl-based thin films were systematically studied. • The thermal stability of microwave properties of FeSiAl-based films was studied. • The permeabilities were got using shorted micro-strip transmission-line perturbation. • The thermal stability of properties we studied is relatively good.

Double switching hysteresis loop in a single layer Fe3Pt alloy thin films

International Nuclear Information System (INIS)

Nahid, M.A.I.; Suzuki, Takao

2008-01-01

The Fe 3 Pt alloy thin films were epitaxially grown on MgO(100) substrate by e-beam evaporation. The films were partially ordered at the substrate deposition temperature above 350 deg. C. These partially ordered films exhibit very large biaxial magnetic anisotropy constant in the order of 10 5 J/m 3 and produce double switching in the hysteresis loops. The difference of the switching field of these films can be up to about 3 x 10 5 A/m by tuning the angle of the applied field with respect to the easy axes. This double switching behavior stems from the large biaxial magnetic anisotropy of the films

Magneto-optical Faraday spectroscopy of completely bismuth-substituted Bi3Fe5O12 garnet thin films

International Nuclear Information System (INIS)

Deb, M; Popova, E; Fouchet, A; Keller, N

2012-01-01

We performed a magneto-optical (MO) Faraday spectroscopy study of bismuth iron garnet Bi 3 Fe 5 O 12 thin single-crystalline films with thickness from 5 to 220 nm. The Faraday rotation and ellipticity spectra were measured for photon energies ranging from 1.7 to 4.2 eV. Using a model based on two electric dipole transitions associated with tetrahedral and octahedral iron sites, we successfully reproduce the observed rotation and ellipticity spectra. The sign of both site contributions to the Faraday rotation and ellipticity spectra has been used to interpret the complex thermal dependence of the Faraday rotation and ellipticity. For a Faraday ellipticity, anomalous hysteresis loops have been observed around specific photon energies. To explain the surprising shape of hysteresis loop, a model based on the superposition of two hysteresis loops with opposite sign associated with both sites is proposed. The modelling of these hysteresis loops allows accessing the magnetic properties of each individual sublattice. Finally, we have studied the dependence of the energy level parameters on bismuth content in Yi 3-x Bi x Fe 5 O 12 garnet and on the thickness of bismuth iron garnet. Based on this analysis, we show that MO spectroscopy is a fast and non-destructive technique to determine the bi-deficiency of BIG films.

Effect of swift heavy ion irradiation on structural and magnetic properties of GdFe{sub 1−x}Ni{sub x}O{sub 3} (x≤0.2) thin films

Energy Technology Data Exchange (ETDEWEB)

Kaur, Pawanpreet [Department of Physics, National Institute of Technology, Hamirpur, H.P. 177005 (India); Sharma, K.K., E-mail: kknitham@gmail.com [Department of Physics, National Institute of Technology, Hamirpur, H.P. 177005 (India); Pandit, Rabia [Department of Physics, National Institute of Technology, Hamirpur, H.P. 177005 (India); Choudhary, R.J. [UGC-DAE Consortium for Scientific Research at Indore, M.P. 452 001 (India); Kumar, Ravi [Centre for Material Science and Engineering, National Institute of Technology, Hamirpur, H.P 177005 (India)

2016-01-15

The present work reports the effect of Ni doping and 200 MeV Ag{sup 15+} ion irradiation on the structural and magnetic properties of GdFe{sub 1−x}Ni{sub x}O{sub 3} (x≤0.2) thin films grown on SrTiO{sub 3} (001) substrate by pulse laser deposition (PLD). From the XRD patterns ‘c-axis’ oriented growth in the pristine films is noticed, whereas after irradiation amorphization in the films is noticed. The atomic force microscopic (AFM) images reveal the increase in surface roughness with doping and irradiation as well. The irreversibility in the zero field cooled and field cooled magnetic curves indicates to the possibility of magnetic disorder in all the pristine as well as irradiated samples. Magnetization has been found to decrease with increasing Ni{sup 3+} ion substitution at room temperature whereas an enhancement in magnetization is noticed after ion irradiation for all the films. The disparity in the magnetic properties of pristine GdFe{sub 1−x}Ni{sub x}O{sub 3} (0.0≤x≤0.2) orthoferrites thin films can be correlated to the difference in hybridization in transition metal ion and O{sup 2−} ion orbitals. However, presence of strains caused by the columnar defects is responsible for the change in structural, morphological and magnetic properties in the irradiated samples. - Highlights: • ‘c-axis’ oriented GdFe{sub 1−x}Ni{sub x}O{sub 3} (x≤0.2) thin films grown on SrTiO{sub 3} substrate. • Thin films have been irradiated by 200 MeV Ag{sup 15+} ions. • Presence of columnar defects have been estimated using SRIM. • Magnetic disorder in all the film samples have been seen at lower temperatures. • Structural and magnetic characteristics altered with doping and ion irradiation.

Imprinted sol-gel electrochemical sensor for the determination of benzylpenicillin based on Fe3O4/SiO2 multi-walled carbon nanotubes-chitosans nanocomposite film modified carbon electrode

International Nuclear Information System (INIS)

Hu Yufang; Li Jiaxing; Zhang Zhaohui; Zhang Huabin; Luo Lijuan; Yao Shouzhuo

2011-01-01

Graphical abstract: A novel imprinted sol-gel electrochemical sensor based on Fe 3 O 4 /SiO 2 -MWNTs-CTS nanocomposite film and a thin MIP film has been developed on a carbon electrode. Highlights: → A novel imprinted sol-gel electrochemical sensor based on Fe 3 O 4 /SiO 2 -MWNTs-CTS nanocomposites has been developed. → Fe 3 O 4 /SiO 2 -MWNTs-CTS nanocomposites act as 'electronic wires' to enhance the electron transfer. → The inherent specificity of the MIPs brings about highly selectivity. The imprinted sensor detects benzylpenicillin in real samples successfully. - Abstract: Herein, a novel imprinted sol-gel electrochemical sensor based on multi-walled carbon nanotubes (MWNTs) doped with chitosan film on a carbon electrode has been developed. Prior to doped, the MWNTs have been decorated with Fe 3 O 4 nanoparticles which have been coated uniformly with SiO 2 layer. The characterization of imprinted sensor has been carried out by X-ray diffraction and scanning electron microscopy. The performance of the proposed imprinted sensor has been investigated using cyclic voltammetry and differential pulse voltammetry. The imprinted sensor offers a fast response and sensitive benzylpenicillin quantification. The fabricated benzylpenicillin imprinted sensor exhibits a linear response from 5.0 x 10 -8 to 1.0 x 10 -3 mol L -1 with a detection limit of 1.5 x 10 -9 mol L -1 . For samples analysis, perfect recoveries of the imprinted sensor for benzylpenicillin indicated that the imprinted sensor was able to detect benzylpenicillin in real samples successfully.

Ferroelectric properties of sandwich structured (Bi, La)4T3O12/Pb(Zr, Ti)O3/ (Bi, La)4Ti3O12 thin films on Pt/Ti/SiO2/Si substrates

International Nuclear Information System (INIS)

Bao Dinghua; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

2002-01-01

Sandwich structured (Bi, La) 4 Ti 3 O 12 /Pb(Zr, Ti)O 3 /(Bi, La) 4 Ti 3 O 12 thin films were fabricated on Pt/Ti/SiO 2 /Si substrates, with the intention of simultaneously utilizing the advantages of both (Bi, La) 4 Ti 3 O 12 (BLT) and Pb(Zr, Ti)O 3 (PZT) thin films such as non-fatigue behaviours of BLT and good ferroelectric properties of PZT. Both BLT and PZT layers were prepared by a chemical solution deposition technique. The experiments demonstrated that the sandwich structure showed fatigue-free characteristics at least up to 10 10 switching bipolar pulse cycles under 8 V and excellent retention properties. The sandwich structured thin films also exhibited well-defined hysteresis loops with a remanent polarization (2P r ) of 8.8 μC cm -2 and a coercive field (E c ) of 47 kV cm -1 . The room-temperature dielectric constant and dissipation factor were 210 and 0.031, respectively, at a frequency of 100 kHz. These results suggest that this sandwich structure is a promising material combination for ferroelectric memory applications. (author)

Nanostructured Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction photoelectrode for efficient hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Sharma, Dipika; Upadhyay, Sumant; Verma, Anuradha [Department of Chemistry, Dayalbagh Educational Institute, Agra-282 110 India (India); Satsangi, Vibha R. [Department of Physics Computer Sciences, Dayalbagh Educational Institute, Agra-282 110 India (India); Shrivastav, Rohit [Department of Chemistry, Dayalbagh Educational Institute, Agra-282 110 India (India); Dass, Sahab, E-mail: drsahabdas@gmail.com [Department of Chemistry, Dayalbagh Educational Institute, Agra-282 110 India (India)

2015-01-01

Nanostructured thin films of pristine Fe{sub 2}O{sub 3}, Ti-doped Fe{sub 2}O{sub 3}, Cu{sub 2}O, and Fe{sub 2}O{sub 3}/Cu{sub 2}O, and Ti-doped Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction were deposited on tin-doped indium oxide (Sn:In{sub 2}O{sub 3}) glass substrate using spray pyrolysis method. Ti doping is done to improve photoelectric conversion efficiency and electrical conductivity of hematite thin films. Further enhanced photocurrent is achieved for Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction electrodes. All samples were characterized using X-ray diffractometry, scanning electron microscopy, atomic force microscopy, and UV-Vis spectrometry. Photoelectrochemical properties were also investigated in a three-electrode cell system. UV-Vis absorption spectrum for pristine Fe{sub 2}O{sub 3}, Ti-Fe{sub 2}O{sub 3}, Cu{sub 2}O, Fe{sub 2}O{sub 3}/Cu{sub 2}O, and Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction thin films exhibited absorption in visible region. Nanostructured thin films as prepared were used as photoelectrode in the photoelectrochemical cell for water splitting reaction. Maximum photocurrent density of 2.60 mA/cm{sup 2} at 0.95 V/SCE was exhibited by 454 nm thick Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction photoelectrode. Increased photocurrent density and enhanced incident photon-to-electron conversion efficiency, offered by the heterojunction thin films may be attributed to improved conductivity and efficient separation of the photogenerated charge carriers at the Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O interface. - Highlights: • Heterojunction thin films were deposited using spray pyrolysis techniques. • Titanium doping in Fe{sub 2}O{sub 3} played a significant role in PEC response. • Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O heterojunction shows the absorption in visible range. • Improved charge separation and enhanced PEC response were achieved in Ti-Fe{sub 2}O{sub 3}/Cu{sub 2}O.

Photoelectron diffraction study of Rh nanoparticles growth on Fe3O4/Pd(111) ultrathin film

International Nuclear Information System (INIS)

Abreu, G. J. P.; Pancotti, A; Lima, L. H. de; Landers, R.; Siervo, A. de

2013-01-01

Metallic nanoparticles (NPs) supported on oxides thin films are commonly used as model catalysts for studies of heterogeneous catalysis. Several 4d and 5d metal NPs (for example, Pd, Pt and Au) grown on alumina, ceria and titania have shown strong metal support interaction (SMSI), for instance the encapsulation of the NPs by the oxide. The SMSI plays an important role in catalysis and is very dependent on the support oxide used. The present work investigates the growth mechanism and atomic structure of Rh NPs supported on epitaxial magnetite Fe 3 O 4 (111) ultrathin films prepared on Pd(111) using the Molecular Beam Epitaxy (MBE) technique. The iron oxide and the Rh NPs were characterized using X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction and photoelectron diffraction (PED). The combined XPS and PED results indicate that Rh NPs are metallic, cover approximately 20 % of the iron oxide surface and show height distribution ranging 3–5 ML (monolayers) with essentially a bulk fcc structure.

Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

International Nuclear Information System (INIS)

Zhang, Yijun; Liu, Ming; Ren, Wei; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang

2015-01-01

One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe 3 O 4 thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe 3 O 4 thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7 nm, resulting in a superparamagnetic behavior with a blocking temperature of 210 K. After post-annealing in H 2 /Ar at 400 °C, the as-grown α−Fe 2 O 3 sample is reduced to Fe 3 O 4 phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications

Tuning magnetic properties of magnetoelectric BiFeO{sub 3}-NiFe{sub 2}O{sub 4} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Crane, S.P. [Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States)], E-mail: scrane@berkeley.edu; Bihler, C.; Brandt, M.S. [Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Goennenwein, S.T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, D-85748 Garching (Germany); Gajek, M. [Department of Physics, University of California, Berkeley, CA 94720 (United States); Ramesh, R. [Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States)

2009-02-15

Multifunctional thin film nanostructures containing soft magnetic materials such as nickel ferrite are interesting for potential applications in microwave signal processing because of the possibility to shrink the size of device architecture and limit device power consumption. An essential prerequisite to future applications of such a system is a firm understanding of its magnetic properties. We show that nanostructures composed of ferrimagnetic NiFe{sub 2}O{sub 4} pillars in a multiferroic BiFeO{sub 3} matrix can be tuned magnetically by altering the aspect ratio of the pillars by depositing films of varying thickness. Magnetic anisotropy is studied using ferromagnetic resonance, which shows that the uniaxial magnetic anisotropy in the growth direction changes sign upon increasing the film thickness. The magnitude of this anisotropy contribution can be explained via a combination of shape and magnetostatic effects, using the object-oriented micromagnetic framework (OOMMF). The key factors determining the magnetic properties of the films are shown to be the aspect ratio of individual pillars and magnetostatic interactions between neighboring pillars.

Epitaxial thin-film growth of Ruddlesden-Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

International Nuclear Information System (INIS)

Butt, Shariqa Hassan; Rafique, M.S.; Siraj, K.; Latif, A.; Afzal, Amina; Awan, M.S.; Bashir, Shazia; Iqbal, Nida

2016-01-01

Ruddlesden-Popper Ba 3 Zr 2 O 7 thin films have been synthesized via pulsed laser deposition (PLD) technique. The optimization of deposition parameters in PLD enables the formation of thin film of metastable Ba 3 Zr 2 O 7 phase from BaZrO 3 target. In order to see the post-annealing effects on the structural and optical properties, the deposited Ba 3 Zr 2 O 7 thin films were annealed at 500, 600 and 800 C. X-ray diffraction (XRD) reveals the formation of Ba 3 Zr 2 O 7 phase with tetragonal structure. The changes in the surface of the deposited films were analysed by FE-SEM and AFM. The thin film post-annealed at 500 C exhibited the best structural, optical and surface properties. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Zr and O exist mainly in the form of Ba 3 Zr 2 O 7 Ruddlesden-Popper-type perovskite structure. (orig.)

The effect of solution pH on the electrochemical performance of nanocrystalline metal ferrites MFe2O4 (M=Cu, Zn, and Ni) thin films

Science.gov (United States)

Elsayed, E. M.; Rashad, M. M.; Khalil, H. F. Y.; Ibrahim, I. A.; Hussein, M. R.; El-Sabbah, M. M. B.

2016-04-01

Nanocrystalline metal ferrite MFe2O4 (M=Cu, Zn, and Ni) thin films have been synthesized via electrodeposition-anodization process. Electrodeposited (M)Fe2 alloys were obtained from aqueous sulfate bath. The formed alloys were electrochemically oxidized (anodized) in aqueous (1 M KOH) solution, at room temperature, to the corresponding hydroxides. The parameters controlling the current efficiency of the electrodeposition of (M)Fe2 alloys such as the bath composition and the current density were studied and optimized. The anodized (M)Fe2 alloy films were annealed in air at 400 °C for 2 h. The results revealed the formation of three ferrite thin films were formed. The crystallite sizes of the produced films were in the range between 45 and 60 nm. The microstructure of the formed film was ferrite type dependent. The corrosion behavior of ferrite thin films in different pH solutions was investigated using open circuit potential (OCP) and potentiodynamic polarization measurements. The open circuit potential indicates that the initial potential E im of ZnFe2O4 thin films remained constant for a short time, then sharply increased in the less negative direction in acidic and alkaline medium compared with Ni and Cu ferrite films. The values of the corrosion current density I corr were higher for the ZnFe2O4 films at pH values of 1 and 12 compared with that of NiFe2O4 and CuFe2O4 which were higher only at pH value 1. The corrosion rate was very low for the three ferrite films when immersion in the neutral medium. The surface morphology recommended that Ni and Cu ferrite films were safely used in neutral and alkaline medium, whereas Zn ferrite film was only used in neutral atmospheres.

Strain-mediated magnetic and transport properties of epitaxial LuxFe3-xO4 films

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Wang, P.; Jin, C.; Zheng, D. X.; Bai, H. L.

2015-10-01

Strain mediated structure, magnetic, and transport properties of spinel ferrites were investigated by growing epitaxial LuxFe3-xO4 (LFO, 0 ≤ x ≤ 0.26 ) films on SrTiO3 and MgO substrates with in-plane compressive and tensile strains, respectively. The lattice parameter of LFO films decreases on SrTiO3 substrates, while increases on MgO substrates with the increasing Lu content. The LFO films on SrTiO3 substrates exhibit larger saturation magnetization and smaller exchange bias and coercive field. Phase shift of anisotropic magnetoresistance is also observed in the LFO films on SrTiO3 substrates. In addition, the nonmagnetic Lu3+ ions in spinel ferrites enhance the spin canting, which further increases the exchange bias and coercive field and strengthens the four-fold symmetry of anisotropic magnetoresistance and the two-fold symmetry of planar Hall effect.

Raman Scattering in La0.2Sr0.8FeO3-δ thin film: annealing-induced reduction and phase transformation

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Islam, Mohammad; Xie, Yujun; Scafetta, Mark; May, Steven; Spanier, Jonathan

2015-03-01

Raman scattering in thin film La0.2Sr0.8FeO3-δ on MgO(001) collected at 300 K following different stages of annealing at selected temperatures (300 K topotactic transformation of the crystal structure from that of the rhombohedral ABO3 perovskites to that of Brownmillerite-like structure consisting of octahedrally and tetrahedrally coordinated Fe atoms. We acknowledge the ONR (N00014-11-1-0664), the Drexel Centralized Research Facilities, the Army Research Office DURIP program, the Department of Education (GAANN-RETAIN, Award No. P200A100117), and Leszek Wielunski at Rutgers University.

The Effect of Thickness on the Physical Properties of Fe2O3 Thin Films Prepared by DC Magnetron Sputtering

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Baha'a A. Al-Hilli

2017-11-01

Full Text Available The objective of this study is to assess the influence of nano-particle Fe2O3 thin film thickness on some physical properties which were prepared by magnetron DC- sputtering on glass substrate at room temperature. The structure was tested with X-Ray diffraction and it was to be amorphous and to become single crystal with recognized peak in (003 after annealing at temperature 500oC. The physical properties as a function of deposition parameters and then film thickness were studied. The optical properties such as absorbance, energy gap and some optical constants are measured and found that of about (3eV energy gap.

Fe3O4/γ-Fe2O3 nanoparticle multilayers deposited by the Langmuir-Blodgett technique for gas sensors application.

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Capone, S; Manera, M G; Taurino, A; Siciliano, P; Rella, R; Luby, S; Benkovicova, M; Siffalovic, P; Majkova, E

2014-02-04

Fe3O4/γ-Fe2O3 nanoparticles (NPs) based thin films were used as active layers in solid state resistive chemical sensors. NPs were synthesized by high temperature solution phase reaction. Sensing NP monolayers (ML) were deposited by Langmuir-Blodgett (LB) techniques onto chemoresistive transduction platforms. The sensing ML were UV treated to remove NP insulating capping. Sensors surface was characterized by scanning electron microscopy (SEM). Systematic gas sensing tests in controlled atmosphere were carried out toward NO2, CO, and acetone at different concentrations and working temperatures of the sensing layers. The best sensing performance results were obtained for sensors with higher NPs coverage (10 ML), mainly for NO2 gas showing interesting selectivity toward nitrogen oxides. Electrical properties and conduction mechanisms are discussed.

Dynamic Atomic Reconstruction: How Fe_{3}O_{4} Thin Films Evade Polar Catastrophe for Epitaxy

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C. F. Chang

2016-10-01

Full Text Available Polar catastrophe at the interface of oxide materials with strongly correlated electrons has triggered a flurry of new research activities. The expectations are that the design of such advanced interfaces will become a powerful route to engineer devices with novel functionalities. Here, we investigate the initial stages of growth and the electronic structure of the spintronic Fe_{3}O_{4}/MgO(001 interface. Using soft x-ray absorption spectroscopy, we have discovered that the so-called A-sites are completely missing in the first Fe_{3}O_{4} monolayer. This discovery allows us to develop an unexpected but elegant growth principle in which, during deposition, the Fe atoms are constantly on the move to solve the divergent electrostatic potential problem, thereby ensuring epitaxy and stoichiometry at the same time. This growth principle provides a new perspective for the design of interfaces.

A short literature survey on iron and cobalt ion doped TiO{sub 2} thin films and photocatalytic activity of these films against fungi

Energy Technology Data Exchange (ETDEWEB)

Tatl Latin-Small-Letter-Dotless-I dil, Ilknur [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Bacaks Latin-Small-Letter-Dotless-I z, Emin [Department of Physics, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Buruk, Celal Kurtulus [Department of Microbiology, Faculty of Medicine, Karadeniz Technical University, 61080 Trabzon (Turkey); Breen, Chris [Materials and Engineering Research Institution, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Soekmen, Muenevver, E-mail: msokmen@ktu.edu.tr [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Co or Fe doped TiO{sub 2} thin films were prepared by sol-gel method. Black-Right-Pointing-Pointer We obtained lower E{sub g} values for Fe-doped and Co-TiO{sub 2} thin films. Black-Right-Pointing-Pointer Doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer Photocatalytic killing effect of the doped TiO{sub 2} thin films on C. albicans and A. niger was significantly higher than undoped TiO{sub 2} thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe{sup 3+} or Co{sup 2+} ion doped TiO{sub 2} thin films and suspensions were summarized. Additionally, a sol-gel method was used for preparation of the 2% Co or Fe doped TiO{sub 2} thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E{sub g} value was 3.40 eV for the pure TiO{sub 2}, 3.00 eV for the Fe-doped TiO{sub 2} film and 3.25 eV for Co-TiO{sub 2} thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO{sub 2} thin film on Candida albicans was significantly higher than Fe doped TiO{sub 2} thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Oxygen surface exchange kinetics measurement by simultaneous optical transmission relaxation and impedance spectroscopy: Sr(Ti,Fe)O3-x thin film case study.

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Perry, Nicola H; Kim, Jae Jin; Tuller, Harry L

2018-01-01

We compare approaches to measure oxygen surface exchange kinetics, by simultaneous optical transmission relaxation (OTR) and AC-impedance spectroscopy (AC-IS), on the same mixed conducting SrTi 0.65 Fe 0.35 O 3-x film. Surface exchange coefficients were evaluated as a function of oxygen activity in the film, controlled by gas partial pressure and/or DC bias applied across the ionically conducting yttria-stabilized zirconia substrate. Changes in measured light transmission through the film over time (relaxations) resulted from optical absorption changes in the film corresponding to changes in its oxygen and oxidized Fe (~Fe 4+ ) concentrations; such relaxation profiles were successfully described by the equation for surface exchange-limited kinetics appropriate for the film geometry. The k chem values obtained by OTR were significantly lower than the AC-IS derived k chem values and k q values multiplied by the thermodynamic factor (bulk or thin film), suggesting a possible enhancement in k by the metal current collectors (Pt, Au). Long-term degradation in k chem and k q values obtained by AC-IS was also attributed to deterioration of the porous Pt current collector, while no significant degradation was observed in the optically derived k chem values. The results suggest that, while the current collector might influence measurements by AC-IS, the OTR method offers a continuous, in situ , and contact-free method to measure oxygen exchange kinetics at the native surfaces of thin films.

Oxygen surface exchange kinetics measurement by simultaneous optical transmission relaxation and impedance spectroscopy: Sr(Ti,Fe)O3-x thin film case study

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Perry, Nicola H.; Kim, Jae Jin; Tuller, Harry L.

2018-01-01

Abstract We compare approaches to measure oxygen surface exchange kinetics, by simultaneous optical transmission relaxation (OTR) and AC-impedance spectroscopy (AC-IS), on the same mixed conducting SrTi0.65Fe0.35O3-x film. Surface exchange coefficients were evaluated as a function of oxygen activity in the film, controlled by gas partial pressure and/or DC bias applied across the ionically conducting yttria-stabilized zirconia substrate. Changes in measured light transmission through the film over time (relaxations) resulted from optical absorption changes in the film corresponding to changes in its oxygen and oxidized Fe (~Fe4+) concentrations; such relaxation profiles were successfully described by the equation for surface exchange-limited kinetics appropriate for the film geometry. The kchem values obtained by OTR were significantly lower than the AC-IS derived kchem values and kq values multiplied by the thermodynamic factor (bulk or thin film), suggesting a possible enhancement in k by the metal current collectors (Pt, Au). Long-term degradation in kchem and kq values obtained by AC-IS was also attributed to deterioration of the porous Pt current collector, while no significant degradation was observed in the optically derived kchem values. The results suggest that, while the current collector might influence measurements by AC-IS, the OTR method offers a continuous, in situ, and contact-free method to measure oxygen exchange kinetics at the native surfaces of thin films. PMID:29511391

Self-Poling of BiFeO3 Thick Films.

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Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

2016-08-03

Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

Thick Fe2O3, Fe3O4 films prepared by the chemical solution deposition method

Czech Academy of Sciences Publication Activity Database

Buršík, Josef; Košovan, P.; Šubrt, Jan

2006-01-01

Roč. 39, č. 2 (2006), s. 85-94 ISSN 0928-0707 R&D Projects: GA ČR GA203/01/0408 Institutional research plan: CEZ:AV0Z40320502 Keywords : chemical solution deposition * thick films * alpha-Fe2O3 Subject RIV: CA - Inorganic Chemistry Impact factor: 1.009, year: 2006

Spin-on Bi4Sr3Ca3Cu4O16μ/sub x/ superconducting thin films from citrate precursors

International Nuclear Information System (INIS)

Furcone, S.L.; Chiang, Y.

1988-01-01

Thin films in the Bi-Sr-Ca-Cu-O system have been synthesized from homogeneous liquid citrate precursors by a spin-coating and pyrolysis method. Films prepared on SrTiO 3 substrates of [100] orientation show strongly textured orientations with the c axis of the predominant Bi 4 Sr 3 Ca 3 Cu 4 O 16 μ/sub x/ phase normal to the film plane. In a single coating and firing, crack-free films of 0.2--0.5 μm thickness are obtained. For films fired to peak temperatures of 850--875 0 C, linearly decreasing resistance with temperature is observed, with rho (300 K)∼460 μΩ cm and rho (300 K)rho (100 K)∼2.4. Clear onsets of superconductivity are observed at 90--100 K, with occasional films showing smaller resistant drops at 110--120 K. For all films, T/sub c/ (R = 0) occurs in the range 70--75 K. High critical current densities at 4.2 K of 5--8 x 10 5 Acm 2 are measured by direct transport

Exchange coupling in permalloy/BiFeO3 heterostructures

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Heron, John; Wang, Chen; Carlton, David; Nowakowski, Mark; Gajek, Martin; Awschalom, David; Bokor, Jeff; Ralph, Dan; Ramesh, R.

2010-03-01

BiFeO3 is a ferroelectric and antiferromagnetic multiferroic with the ferroelectric and antiferromagnetic order parameters coupled at room temperature. This coupling results in the reorientation of the ferroelectric and magnetic domains as applied voltages switch the electric polarization. Previous studies using ferromagnet/BiFeO3 heterostructures have shown that the anisotropy of the ferromagnetic layer can be tuned by the ferroelectric domain structure of the BiFeO3 film [1, 2]. The physical mechanism driving this exchange bias with BiFeO3 is still under investigation. We use patterned permalloy structures, with varying aspect ratios, on BiFeO3 thin films to investigate the physics of this interaction. The results of our studies using MFM, PEEM, and MOKE to understand this mechanism as a means to electric field control of magnetic structures will be presented. [4pt] [1] H. Bea et al., Physical Review Letters 100, 017204 (2008).[0pt] [2] L.W. Martin et al., Nanoletters 8, 2050 (2008).

Thin film bismuth iron oxides useful for piezoelectric devices

Science.gov (United States)

Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

2016-05-31

The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Investigation of electronic states of infinite-layer SrFeO2 epitaxial thin films by X-ray photoemission and absorption spectroscopies

International Nuclear Information System (INIS)

Chikamatsu, Akira; Matsuyama, Toshiya; Hirose, Yasushi; Kumigashira, Hiroshi; Oshima, Masaharu; Hasegawa, Tetsuya

2012-01-01

Highlights: ► Electronic states of infinite-layer SrFeO 2 films have been experimentally observed. ► Fe 3d states have higher densities of states in the valence-band region. ► Three peaks derived from Fe 3d states were observed in the conduction-band region. ► Indirect bandgap value was determined to be 1.3 eV. - Abstract: We investigated the electronic states of a single-crystal SrFeO 2 epitaxial thin film in the valence-band and conduction-band regions using synchrotron-radiation X-ray photoemission and absorption spectroscopies. Fe 2p–3d resonant photoemission measurements revealed that the Fe 3d states have higher densities of states at binding energies of 3–5 eV and 5–8.5 eV in the valence-band region. The O K-edge X-ray absorption spectrum exhibited three peaks in the Fe 3d-derived conduction band hybridized with O 2p states; these can be assigned to Fe 3d xy , 3d xz + 3d yz , and 3d x 2 –y 2 . In addition, the indirect bandgap value of the SrFeO 2 film was determined to be 1.3 eV by transmission and absorption spectroscopies.

Carbon dioxide and water adsorption on highly epitaxial Delafossite CuFeO2 thin film

Science.gov (United States)

Rojas, S.; Joshi, T.; Borisov, P.; Sarabia, M.; Lederman, D.; Cabrera, A. L.

2015-03-01

Thermal programmed desorption (TPD) of CO2 and H2O from a 200 nm thick CuFeO2 Delafossite surface was performed in a standard UHV chamber, The CuFeO2 thin film grown using Pulsed Laser Deposition (PLD) over an Al2O3 (0001) substrate with controlled O2 atmosphere resulted with highly epitaxial crystal structure. The adsorption/desorption of CO2 and H2O process was also monitored with X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Our results revealed that carbon dioxide interacts with CuFeO2 forming Fe carbonates compounds on its surface. Hydroxides were also formed on the surface due to water presence. Using TPD data, Arrhenius plots for CO2 and water desorption were done and activation energy for desorption was obtained. Funds FONDECyT 1130372; Thanks to P. Ferrari.

Nd3-xBixFe4GaO12 (x = 2, 2.5 films on glass substrates prepared by MOD method

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Yoshida T.

2014-07-01

Full Text Available We studied Nd3-XBiXFe4GaO12 films to obtain perpendicular magnetic anisotropy as well as large Faraday effect. NdBi2Fe4GaO12 (Bi2:NIGG and Nd0.5Bi2.5Fe4GaO12 (Bi2.5:NIGG films were obtained on Nd2BiFe4GaO12 (Bi1:NIGG layer prepared on glass substrates by metal-organic decomposition (MOD method. Bi2:NIGG and Bi2.5:NIGG films showed large Faraday rotation angles of 7.5 and 10.5 degree/µm, at a wavelength of 520 nm, respectively. Those films have perpendicular magnetic anisotropy with a coercivity of 350 Oe and a saturation magnetic field of 730 Oe.

LiFePO_4_−_xN_y thin-film electrodes coated on carbon fiber-modified current collectors for pseudocapacitors

International Nuclear Information System (INIS)

Chiu, Kuo-Feng; Su, Shih-Hsuan; Leu, Hoang-Jyh; Huang, Wei-Chieh

2015-01-01

LiFePO_4_−_xN_y thin films were sputter-deposited on micron carbon fibers (MCFs) under a gas mixture of N_2/Ar/H_2 as electrode materials in pseudocapacitors. The MCFs were fabricated by thermal chemical vapor deposition on stainless steel substrates as current collectors. Various amounts of N_2 were introduced by controlling the flow ratios of N_2 to Ar/H_2. The LiFePO_4_−_xN_y thin films coated on the surfaces of MCFs were observed by field emission scanning electron microscopy. The electrochemical properties of the LiFePO_4_−_xN_y thin films were characterized using cyclic voltammetry and charge–discharge processes. The LiFePO_4_−_xN_y thin-film electrode deposited under the optimal N_2 contents exhibited a high specific capacitance of 722 F/g at 1 A/g. Even at a current of 20 A/g, the electrode delivered a capacitance of 298 F/g. The pseudocapacitors using LiFePO_4_−_xN_y thin-film electrodes showed no significant capacitance fading after 1000 cycles at 1 A/g. The results indicated that nitrogen doping improved the electrochemical performances of LiFePO_4, demonstrating the potential of LiFePO_4_−_xN_y as an active material in pseudocapacitors. - Highlights: • LiFePO_4_−_xN_y thin films were sputter-deposited on micron carbon fibers (MCFs). • MCFs only act as a three-dimensional current collector in this system. • The pseudocapacitor exhibits a high specific capacitance.

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

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