Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

Science.gov (United States)

Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

2014-08-01

Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

High performance p-i-n CdTe and CdZnTe detectors

CERN Document Server

Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

1999-01-01

A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

Performance characteristics of CdTe drift ring detector

Science.gov (United States)

Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Veeramani, P.; Kazemi, S.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

2014-03-01

CdTe and CdZnTe material is an excellent candidate for the fabrication of high energy X-ray spectroscopic detectors due to their good quantum efficiency and room temperature operation. The main material limitation is associated with the poor charge transport properties of holes. The motivation of this work is to investigate the performance characteristics of a detector fabricated with a drift ring geometry that is insensitive to the transport of holes. The performance of a prototype Ohmic CdTe drift ring detector fabricated by Acrorad with 3 drift rings is reported; measurements include room temperature current voltage characteristics (IV) and spectroscopic performance. The data shows that the energy resolution of the detector is limited by leakage current which is a combination of bulk and surface leakage currents. The energy resolution was studied as a function of incident X-ray position with an X-ray microbeam at the Diamond Light Source. Different ring biasing schemes were investigated and the results show that by increasing the lateral field (i.e. the bias gradient across the rings) the active area, evaluated by the detected count rate, increased significantly.

Tests of UFXC32k chip with CdTe pixel detector

Science.gov (United States)

Maj, P.; Taguchi, T.; Nakaye, Y.

2018-02-01

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.

Evaluation of K x-ray escape and crosstalk in CdTe detectors and multi-channel detectors

International Nuclear Information System (INIS)

Ohtsuchi, Tetsuro; Ohmori, Koichi; Tsutsui, Hiroshi; Baba, Sueki

1995-01-01

The simple structure of CdTe semiconductor detectors facilitates their downsizing, and their possible application to radiographic sensors has been studied. The escape of K X-rays from these detectors increases with reduction of their dimensions and affects the measurements of X- and gamma-ray spectra. K X-rays also produce crosstalk in multi-channel detectors with adjacent channels. Therefore, K X-rays which escape from the detector elements degrade both the precision of energy spectra and spatial resolution. The ratios of escape peak integrated counts to total photon counts for various sizes of CdTe single detectors were calculated for gamma rays using the Monte Carlo method. Also, escape and crosstalk ratios were simulated for the CdTe multi-channel detectors. The theoretical results were tested experimentally for 59.54-keV gamma rays from a 241 Am radioactive source. Results showed that escape ratios for single detectors were strongly dependent on element size and thickness. The escape and crosstalk ratios increased with closer channel pitch. The calculated results showed a good agreement with the experimental data. The calculations made it clear that K X-rays which escaped to neighboring channels induced crosstalk more frequently at smaller channel pitch in multichannel detectors. A radiation shielding grid which blocked incident photons between the boundary channels was also tested by experiment and by calculation. It was effective in reducing the probability of escape and crosstalk

Preparation of High Purity CdTe for Nuclear Detector: Electrical and Nuclear Characterization

Science.gov (United States)

Zaiour, A.; Ayoub, M.; Hamié, A.; Fawaz, A.; Hage-ali, M.

High purity crystal with controllable electrical properties, however, control of the electrical properties of CdTe has not yet been fully achieved. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical THM. The nature of the defects involved in the transitions was studied by analyzing the position of the energy levels by TSC method. The resolution of 4.2 keV (FWHM) confirms the high quality and stability of the detectors: TSC spectrum was in coherence with detectors spectrum with a horizontal plate between 0.2 and 0.6 eV. The enhancement in resolution of detectors with a full width at half- maximum (less than 0.31 meV), lead to confirm that the combination of vacuum distillation and zone refining was very effective to obtain more purified CdTe single crystals for photovoltaic or nuclear detectors with better physical properties.

Polycrystalline diamond detectors with three-dimensional electrodes

Energy Technology Data Exchange (ETDEWEB)

Lagomarsino, S., E-mail: lagomarsino@fi.infn.it [University of Florence, Department of Physics, Via Sansone 1, 50019 Sesto Fiorentino (Italy); INFN Firenze, Via B. Rossi 1, 50019 Sesto Fiorentino (Italy); Bellini, M. [INO-CNR Firenze, Largo E. Fermi 6, 50125 Firenze (Italy); Brianzi, M. [INFN Firenze, Via B. Rossi 1, 50019 Sesto Fiorentino (Italy); Carzino, R. [Smart Materials-Nanophysics, Istituto Italiano di Tecnologia, Genova, Via Morego 30, 16163 Genova (Italy); Cindro, V. [Joseph Stefan Institute, Jamova Cesta 39, 1000 Ljubljana (Slovenia); Corsi, C. [University of Florence, Department of Physics, Via Sansone 1, 50019 Sesto Fiorentino (Italy); LENS Firenze, Via N. Carrara 1, 50019 Sesto Fiorentino (Italy); Morozzi, A.; Passeri, D. [INFN Perugia, Perugia (Italy); Università degli Studi di Perugia, Dipartimento di Ingegneria, via G. Duranti 93, 06125 Perugia (Italy); Sciortino, S. [University of Florence, Department of Physics, Via Sansone 1, 50019 Sesto Fiorentino (Italy); INFN Firenze, Via B. Rossi 1, 50019 Sesto Fiorentino (Italy); Servoli, L. [INFN Perugia, Perugia (Italy)

2015-10-01

The three-dimensional concept in diamond detectors has been applied, so far, to high quality single-crystal material, in order to test this technology in the best available conditions. However, its application to polycrystalline chemical vapor deposited diamond could be desirable for two reasons: first, the short inter-electrode distance of three-dimensional detectors should improve the intrinsically lower collection efficiency of polycrystalline diamond, and second, at high levels of radiation damage the performances of the poly-crystal material are not expected to be much lower than those of the single crystal one. We report on the fabrication and test of three-dimensional polycrystalline diamond detectors with several inter-electrode distances, and we demonstrate that their collection efficiency is equal or higher than that obtained with conventional planar detectors fabricated with the same material. - Highlights: • Pulsed laser fabrication of polycristalline diamond detectors with 3D electrodes. • Measurement of the charge collection efficiency (CCE) under beta irradiation. • Comparation between the CCE of 3D and conventional planar diamond sensors. • A rationale for the behavior of three-dimensional and planar sensors is given.

Correction of diagnostic x-ray spectra measured with CdTe and CdZnTe detectors

Energy Technology Data Exchange (ETDEWEB)

Matsumoto, M [Osaka Univ., Suita (Japan). Medical School; Kanamori, H; Toragaito, T; Taniguchi, A

1996-07-01

We modified the formula of stripping procedure presented by E. Di. Castor et al. We added the Compton scattering and separated K{sub {alpha}} radiation of Cd and Te (23 and 27keV, respectively). Using the new stripping procedure diagnostic x-ray spectra (object 4mm-Al) of tube voltage 50kV to 100kV for CdTe and CdZnTe detectors are corrected with comparison of those spectra for the Ge detector. The corrected spectra for CdTe and CdZnTe detectors coincide with those for Ge detector at lower tube voltage than 70kV. But the corrected spectra at higher tube voltage than 70kV do not coincide with those for Ge detector. The reason is incomplete correction for full energy peak efficiencies of real CdTe and CdZnTe detectors. (J.P.N.)

Prototype of high resolution PET using resistive electrode position sensitive CdTe detectors

International Nuclear Information System (INIS)

Kikuchi, Yohei; Ishii, Keizo; Matsuyama, Shigeo; Yamazaki, Hiromichi

2008-01-01

Downsizing detector elements makes it possible that spatial resolutions of positron emission tomography (PET) cameras are improved very much. From this point of view, semiconductor detectors are preferable. To obtain high resolution, the pixel type or the multi strip type of semiconductor detectors can be used. However, in this case, there is a low packing ratio problem, because a dead area between detector arrays cannot be neglected. Here, we propose the use of position sensitive semiconductor detectors with resistive electrode. The CdTe detector is promising as a detector for PET camera because of its high sensitivity. In this paper, we report development of prototype of high resolution PET using resistive electrode position sensitive CdTe detectors. We made 1-dimensional position sensitive CdTe detectors experimentally by changing the electrode thickness. We obtained 750 A as an appropriate thickness of position sensitive detectors, and evaluated the performance of the detector using a collimated 241 Am source. A good position resolution of 1.2 mm full width half maximum (FWHM) was obtained. On the basis of the fundamental development of resistive electrode position sensitive detectors, we constructed a prototype of high resolution PET which was a dual head type and was consisted of thirty-two 1-dimensional position sensitive detectors. In conclusion, we obtained high resolutions which are 0.75 mm (FWHM) in transaxial, and 1.5 mm (FWHM) in axial. (author)

A stacked CdTe pixel detector for a compton camera

International Nuclear Information System (INIS)

Oonuki, Kousuke; Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Nakazawa, Kazuhiro; Ushio, Masayoshi; Mitani, Takefumi; Takahashi, Tadayuki; Tajima, Hiroyasu

2007-01-01

We are developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. A detector material of combined Si strip and CdTe pixel is used to cover the energy range around 60keV. For energies above several hundred keV, in contrast, the higher detection efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as both an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton camera, we developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton kinematics within the energy band from 122 to 662keV. The energy resolution (FWHM) of reconstructed spectra is 7.3keV at 511keV. The angular resolution obtained at 511keV is measured to be 12.2 deg. (FWHM)

CVD polycrystalline diamond. A novel neutron detector and applications

International Nuclear Information System (INIS)

Mongkolnavin, R.

1998-01-01

Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte-Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometer for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. Also other neutron related applications have been suggested. (author)

CVD polycrystalline diamond. A novel neutron detector and applications

International Nuclear Information System (INIS)

Mongkolnavin, R.

1998-07-01

Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation-hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometry for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. (author)

ASTRO-H CdTe detectors proton irradiation at PIF

International Nuclear Information System (INIS)

Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

2015-01-01

Asbstract: The French Atomic Energy Commission (CEA), with the support of the European Space Agency (ESA), is partner of the Soft Gamma-Ray Detector (SGD) and the Hard X-ray Imager (HXI) onboard the 6th Japanese X-ray scientific satellite ASTRO-H (JAXA) initiated by the Institute of Space and Astronautical Science (ISAS). Both scientific instruments, one hosting a series of Compton Gamma Cameras and the other being a focal plane of a grazing incidence mirror telescope in the hard X-ray domain, are equipped with Cadmium Telluride based detectors. ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 µm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper

Local polarization phenomena in In-doped CdTe x-ray detector arrays

International Nuclear Information System (INIS)

Sato, Toshiyuki; Sato, Kenji; Ishida, Shinichiro; Kiri, Motosada; Hirooka, Megumi; Yamada, Masayoshi; Kanamori, Hitoshi

1995-01-01

Local polarization phenomena have been studied in detector arrays with the detector element size of 500 microm x 500 microm, which are fabricated from high-resistivity In-doped CdTe crystals grown by the vertical Bridgman technique. It has been found for the first time that a polarization effect, which is characterized by a progressive decrease of the pulse counting rate with increasing photon fluence, strongly depends on the detector elements, that is, the portion of crystals used. The influence of several parameters, such as the applied electric field strength, time, and temperature, on this local polarization effect is also investigated. From the photoluminescence measurements of the inhomogeneity of In dopant, it is concluded that the local polarization effect observed here originates from a deep level associated with In dopant in CdTe crystals

Physics of grain boundaries in polycrystalline photovoltaic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Yan, Yanfa, E-mail: yanfa.yan@utoledo.edu; Yin, Wan-Jian; Wu, Yelong; Shi, Tingting; Paudel, Naba R. [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Ohio 43606 (United States); Li, Chen [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Poplawsky, Jonathan [The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Wang, Zhiwei [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Ohio 43606 (United States); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Moseley, John; Guthrey, Harvey; Moutinho, Helio; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Pennycook, Stephen J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

2015-03-21

Thin-film solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

Characterization of a pixelated CdTe Timepix detector operated in ToT mode

International Nuclear Information System (INIS)

Billoud, T.; Leroy, C.; Papadatos, C.; Roux, J.S.; Pichotka, M.; Pospisil, S.

2017-01-01

A 1 mm thick CdTe sensor bump-bonded to a Timepix readout chip operating in Time-over-Threshold (ToT) mode has been characterized in view of possible applications in particle and medical physics. The CdTe sensor layer was segmented into 256 × 256 pixels, with a pixel pitch of 55  μm. This CdTe Timepix device, of ohmic contact type, has been exposed to alpha-particles and photons from an 241 Am source, photons from a 137 Cs source, and protons of different energies (0.8–10 MeV) delivered by the University of Montreal Tandem Accelerator. The device was irradiated on the negatively biased backside electrode. An X-ray per-pixel calibration commonly used for this type of detector was done and its accuracy and resolution were assessed and compared to those of a 300  μm thick silicon Timepix device. The electron mobility-lifetime product (μ e τ e ) of CdTe for protons of low energy has been obtained from the Hecht equation. Possible polarization effects have been also investigated. Finally, information about the homogeneity of the detector was obtained from X-ray irradiation.

Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

International Nuclear Information System (INIS)

Eisen, Y.

1996-01-01

Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

International Nuclear Information System (INIS)

Ede, Anthony

2001-01-01

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and γ-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with preliminary results from the fabricated films presented. Attention is then turned to the CdS/CdTe films that are produced commercially for the photovoltaic industry. In this case the crystalline nature, surface topography and optical properties are investigated. A conclusion examines the progress that has been made towards the development of a large area fiat panel digital imaging technique. (author)

Polycrystalline diamond film UV detectors for excimer lasers

International Nuclear Information System (INIS)

Ralchenko, V G; Savel'ev, A V; Konov, Vitalii I; Mazzeo, G; Spaziani, F; Conte, G; Polyakov, V I

2006-01-01

Photoresistive metal-semiconductor-metal detectors based on polycrystalline diamond films are fabricated for recording cw and pulsed UV radiation. The detectors have a high spectral selectivity (the UV-to-VIS response ratio is ∼10 5 ) and a temporal resolution of the order of 10 9 s. 'Solar-blind' photostable diamond detectors are promising for applications in UV lithography, laser micromachining, medicine, and space research. (letters)

Characterization inconsistencies in CdTe and CZT gamma-ray detectors

International Nuclear Information System (INIS)

Lavietes, A.D.; McQuaid, J.H.

1994-10-01

In the past few years, significant developments in cadmium telluride (CdTe) and cadmium zinc telluride (CZT) semiconductor materials have taken place with respect to both quality and yield. Many of the more recent developments have occurred in the area of CZT crystal growth. This has resulted in an explosion of interest in the use of these materials in ambient temperature gamma-ray detectors. Most, if not all, of the manufacturers of CdTe and CZT have acquired government funding to continue research in development and applications, indicating the importance of these improvements in material quality. We have examined many detectors, along with the accompanying manufacturer's data, and it has become apparent that a clear standard does not exist by which each manufacturer characterizes the performance of their material. Result is a wide variety of performance claims that have no basis for comparison and normally cannot be readily reproduced. This paper first supports our observations and then proposes a standard that all manufacturers and users of these materials may use for characterization

Comparison of efficiency degradation in polycrystalline-Si and CdTe thin-film PV modules via accelerated lifecycle testing

Science.gov (United States)

Lai, T.; Potter, B. G.; Simmons-Potter, K.

2017-08-01

Thin-film solar cells normally have the shortest energy payback time due to their simpler mass-production process compared to polycrystalline-Si photovoltaic (PV) modules, despite the fact that crystalline-Si-based technology typically has a longer total lifetime and a higher initial power conversion efficiency. For both types of modules, significant aging occurs during the first two years of usage with slower long-term aging over the module lifetime. The PV lifetime and the return-on-investment for local PV system installations rely on long-term device performance. Understanding the efficiency degradation behavior under a given set of environmental conditions is, therefore, a primary goal for experimental research and economic analysis. In the present work, in-situ measurements of key electrical characteristics (J, V, Pmax, etc.) in polycrystalline-Si and CdTe thin-film PV modules have been analyzed. The modules were subjected to identical environmental conditions, representative of southern Arizona, in a full-scale, industrial-standard, environmental degradation chamber, equipped with a single-sun irradiance source, temperature, and humidity controls, and operating an accelerated lifecycle test (ALT) sequence. Initial results highlight differences in module performance with environmental conditions, including temperature de-rating effects, for the two technologies. Notably, the thin-film CdTe PV module was shown to be approximately 15% less sensitive to ambient temperature variation. After exposure to a seven-month equivalent compressed night-day weather cycling regimen the efficiency degradation rates of both PV technology types were obtained and will be discussed.

Study of the effect of the stress on CdTe nuclear detectors

International Nuclear Information System (INIS)

Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

2013-01-01

CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given

Study of the effect of the stress on CdTe nuclear detectors

Energy Technology Data Exchange (ETDEWEB)

Ayoub, M.; Radley, I.; Mullins, J. T. [Kromek, Thomas Wright way, TS21 3FD, Sedgefield, County Durham (United Kingdom); Hage-Ali, M. [CLEA, Airport road, Beirut (Lebanon)

2013-09-14

CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

A pixellated gamma-camera based on CdTe detectors clinical interests and performances

CERN Document Server

Chambron, J; Eclancher, B; Scheiber, C; Siffert, P; Hage-Ali, M; Regal, R; Kazandjian, A; Prat, V; Thomas, S; Warren, S; Matz, R; Jahnke, A; Karman, M; Pszota, A; Németh, L

2000-01-01

A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the gamma-camera performances. But their use as gamma detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed ...

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications.

Science.gov (United States)

Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

2016-05-01

High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 μm. After resampling to 54 �

Feasibility study on BNCT-SPECT using a CdTe detector

International Nuclear Information System (INIS)

Murata, Isao; Mukai, Taiki; Ito, Masao; Miyamaru, Hiroyuki; Yoshida, Shigeo

2011-01-01

There is no doubt that boron neutron capture therapy (BNCT) is a promising cancer therapy in the near future. At present, one of the severest problems to solve is monitoring of the treatment effect during neutron irradiation. It is known to be difficult in real time. So far, activation foils, small detectors and so on were used to measure the thermal neutron fluence in a certain place of the tumor. The dose distribution is thus estimated from the measured result and prediction with a transport code. In the present study, 478 keV gamma-rays emitted from the excited state of 7 Li produced by 10 B(n,α) 7 Li reaction are directly measured to realize real time monitoring of the treatment effect of BNCT. In this paper, the result of the feasibility study carried out using a Monte Carlo transport code is summarized. We used CdTe detectors with a quite narrow collimator to obtain a BNCT image keeping good spatial resolution. The intensity of capture gamma-rays of 2223 keV produced by 1 H(n,γ) 2 H reaction is very much higher than that of 478 keV. We thus adjusted the detector efficiency by selecting an appropriate thickness so as to optimize the efficiency ratio between 478 and 2223 keV. From the result of the detector response calculation, in case of 20 mm thick CdTe detector with the collimator of 2 mm in diameter, sufficient net count of ∼1000 for 478 keV in 30 min. was realized. It means an efficient and high-resolution BNCT-SPECT image could be obtained. (author)

Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

Science.gov (United States)

Munshi, Amit Harenkumar

with processes suitable for mass production. These are the highest efficiencies reported by any university or national laboratory for polycrystalline thin-film CdTe photovoltaics bettered only by researchers at First Solar Inc. Processing experiments are traditionally designed based on simulation results however in these study microscopic materials characterization has been used as the primary driving force to understand the effects of processing conditions. Every structure and efficiency reported in this study has been extensively studied using microscopic imaging and materials characterization and processing conditions accordingly altered to achieve higher efficiencies. Understanding CdCl2 passivation treatment out of this has been critical to this process. Several observations with regard to effect of CdCl 2 passivation have allowed the use to this treatment to achieve optimum performance. The effects of deposition temperature are also studied in rigorous details. All of these studies have played an important role in optimization of process that lead to high efficiency thin-film CdTe photovoltaic devices. An effort is made in this study to better understand and establish a 3-way relationship between processing conditions, film microstructure and device efficiency for sublimated thin-film CdTe photovoltaics. Some crucial findings include impact of grain size on efficiency of photovoltaic devices and improvement in fill-factor resulting from use of thicker CdTe absorber with larger grain size. An attempt is also made to understand the microstructure as the device efficiency improves from 1% efficiency to over 18% efficiency.

Spectroscopic Imaging Using Ge and CdTe Based Detector Systems for Hard X-ray Applications

Science.gov (United States)

Astromskas, Vytautas

Third generation synchrotron facilities such as the Diamond Light Source (DLS) have a wide range of experiments performed for a wide range of science fields. The DLS operates at energies up to 150 keV which introduces great challenges to radiation detector technology. This work focuses on the requirements that the detector technology faces for X-ray Absorption Fine Structure (XAFS) and powder diffraction experiments in I12 and I15 beam lines, respectively. A segmented HPGe demonstrator detector with in-built charge sensitive CUBE preamplifiers and a Schottky e- collection CdTe Medipix3RX detector systems were investigated to understand the underlying mechanisms that limit spectroscopic, imaging performances and stability and to find ways to overcome or minimise those limitations. The energy resolution and stability of the Ge demonstrator detector was found to have the required characteristics for XAFS measurements. Charge sharing was identified as a limiting factor to the resolution which is going to be addressed in the future development of a full detector system as well as reductions in electronic noise and cross-talk effects. The stability study of the Schottky CdTe Medipix3RX detector showed that polarization is highly dependent on temperature, irradiation duration and incoming flux. A new pixel behaviour called tri-phase (3-P) pixel was identified and a novel method for determining optimum operational conditions was developed. The use of the 3-P pixels as a criterion for depolarization resulted in a stable performance of the detector. Furthermore, the detector was applied in powder diffraction measurement at the I15 beam line and resulted in the detector diffraction pattern matching the simulated data. CdTe Medipix3RX and HEXITEC spectroscopic imaging detectors were applied in identification and discrimination of transitional metals for security application and K-edge subtraction for medical applications. The results showed that both detectors have potential

Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

Energy Technology Data Exchange (ETDEWEB)

Gimenez, E.N., E-mail: Eva.Gimenez@diamond.ac.uk [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom); Astromskas, V. [University of Surrey (United Kingdom); Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N. [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom)

2016-07-11

A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e{sup −} collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system. - Highlights: • A high atomic number (CdTe sensor based) photon-counting detector was developed. • Polarization effects affected the image were minimized by regularly refreshing the bias voltage and stabilizing the temperature. • Good spatial resolution and image quality was achieved following this procedure.

Improvement of the sensitivity of CdTe detectors in the high energy regions

Energy Technology Data Exchange (ETDEWEB)

Nishizawa, Hiroshi; Ikegami, Kazunori; Takashima, Kazuo; Usami, Teruo [Mitsubishi Electric Corp., Tokyo (Japan); Yamamoto, Takayoshi

1996-07-01

In order to improve the efficiency of the full energy peak in the high energy regions, we had previously suggested a multi-layered structure of CdTe elements and have since confirmed the sensitivity improvement of the full energy peak. And furthermore, we have suggested a new type structure of multi-layered elements in this paper and we confirmed that the efficiency of the full energy peak became higher and that more proper energy spectra were obtained by our current experiment than by the detector with the conventional structure. This paper describes a simulation and experiment to improve the efficiency of the full energy peak and to obtain the more proper energy spectra of {sup 137}Cs (662keV) and {sup 60}Co (1.17 and 1.33MeV) using the new structure of CdTe detector. (J.P.N.)

Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

Directory of Open Access Journals (Sweden)

Wagner Anacleto Pinheiro

2006-03-01

Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

International Nuclear Information System (INIS)

Jambi, L.K.; Lees, J.E.; Bugby, S.L.; Alqahtani, M.S.; Tipper, S.; Perkins, A.C.

2015-01-01

Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported

Tracking performance of a single-crystal and a polycrystalline diamond pixel-detector

Energy Technology Data Exchange (ETDEWEB)

Menasce, D.; et al.

2013-06-01

We present a comparative characterization of the performance of a single-crystal and a polycrystalline diamond pixel-detector employing the standard CMS pixel readout chips. Measurements were carried out at the Fermilab Test Beam Facility, FTBF, using protons of momentum 120 GeV/c tracked by a high-resolution pixel telescope. Particular attention was directed to the study of the charge-collection, the charge-sharing among adjacent pixels and the achievable position resolution. The performance of the single-crystal detector was excellent and comparable to the best available silicon pixel-detectors. The measured average detection-efficiency was near unity, ε = 0.99860±0.00006, and the position-resolution for shared hits was about 6 μm. On the other hand, the performance of the polycrystalline detector was hampered by its lower charge collection distance and the readout chip threshold. A new readout chip, capable of operating at much lower threshold (around 1 ke^$-$), would be required to fully exploit the potential performance of the polycrystalline diamond pixel-detector.

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications

Energy Technology Data Exchange (ETDEWEB)

Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew, E-mail: andrew.karellas@umassmed.edu; Shi, Linxi; Gounis, Matthew J. [Department of Radiology, University of Massachusetts Medical School, Worcester, Massachusetts 01655 (United States); Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo [Istituto Nazionale di Fisica Nucleare (INFN), Pisa 56127, Italy and Pixirad Imaging Counters s.r.l., L. Pontecorvo 3, Pisa 56127 (Italy)

2016-05-15

Purpose: High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. Methods: A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. Results: At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 �

Fractal features of CdTe thin films grown by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

2015-12-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Fractal features of CdTe thin films grown by RF magnetron sputtering

International Nuclear Information System (INIS)

Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

2015-01-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Review of CdTe medical applications

Energy Technology Data Exchange (ETDEWEB)

Entine, G; Garcia, D A; Tow, D E

1977-02-01

CdTe sensors are now being used in several areas of nuclear medicine. CdTe probe technics, originally developed to study dental pathology in dog models, are being used clinically to diagnose venous thrombosis of the legs and to detect occult dental infections in patients scheduled for prosthetic cardiovascular and orthopedic surgery. Similar instrumentation is in use in animal research of myocardial infarction and synthetic tooth substitutes. Transmission technics have also been developed to diagnose pulmonary edema and to measure bone mineral changes in space flight. Investigations are also underway in the use of linear or two-dimensional arrays of CdTe gamma sensors for medical imaging. Economic considerations have slowed this work, but the technology appears to be available. Development of photoconductive CdTe X-ray detectors for scintigraphic scanners has also begun. Rapid detector improvement will be needed for success in this field, but the potential usefulness is very great. Together, the present application results are encouraging and wide use of CdTe detectors should occur within only a few years.

CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

International Nuclear Information System (INIS)

Eisen, Y.; Shor, A.; Mardor, I.

1999-01-01

CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

CERN Document Server

Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

2011-01-01

We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil.

Science.gov (United States)

Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R; Buecheler, Stephan; Tiwari, Ayodhya N

2013-01-01

Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

Possible use of CdTe detectors in kVp monitoring of diagnostic X-ray tubes

International Nuclear Information System (INIS)

Krmar, M.; Bucalovic, N.; Baucal, M.; Jovancevic, N.

2010-01-01

It has been suggested that kVp of diagnostic X-ray devices (or maximal energy of X-ray photon spectra) should be monitored routinely; however a standardized non-invasive technique has yet to be developed and proposed. It is well known that the integral number of Compton scattered photons and the intensities of fluorescent X-ray lines registered after irradiation of some material by an X-ray beam are a function of the maximal beam energy. CdTe detectors have sufficient energy resolution to distinguish individual X-ray fluorescence lines and high efficiency for the photon energies in the diagnostic region. Our initial measurements have demonstrated that the different ratios of the integral number of Compton scattered photons and intensities of K and L fluorescent lines detected by CdTe detector are sensitive function of maximal photon energy and could be successfully applied for kVp monitoring.

Spectral resolution and high-flux capability tradeoffs in CdTe detectors for clinical CT.

Science.gov (United States)

Hsieh, Scott S; Rajbhandary, Paurakh L; Pelc, Norbert J

2018-04-01

Photon-counting detectors using CdTe or CZT substrates are promising candidates for future CT systems but suffer from a number of nonidealities, including charge sharing and pulse pileup. By increasing the pixel size of the detector, the system can improve charge sharing characteristics at the expense of increasing pileup. The purpose of this work is to describe these considerations in the optimization of the detector pixel pitch. The transport of x rays through the CdTe substrate was simulated in a Monte Carlo fashion using GEANT4. Deposited energy was converted into charges distributed as a Gaussian function with size dependent on interaction depth to capture spreading from diffusion and Coulomb repulsion. The charges were then collected in a pixelated fashion. Pulse pileup was incorporated separately with Monte Carlo simulation. The Cramér-Rao lower bound (CRLB) of the measurement variance was numerically estimated for the basis material projections. Noise in these estimates was propagated into CT images. We simulated pixel pitches of 250, 350, and 450 microns and compared the results to a photon counting detector with pileup but otherwise ideal energy response and an ideal dual-energy system (80/140 kVp with tin filtration). The modeled CdTe thickness was 2 mm, the incident spectrum was 140 kVp and 500 mA, and the effective dead time was 67 ns. Charge summing circuitry was not modeled. We restricted our simulations to objects of uniform thickness and did not consider the potential advantage of smaller pixels at high spatial frequencies. At very high x-ray flux, pulse pileup dominates and small pixel sizes perform best. At low flux or for thick objects, charge sharing dominates and large pixel sizes perform best. At low flux and depending on the beam hardness, the CRLB of variance in basis material projections tasks can be 32%-55% higher with a 250 micron pixel pitch compared to a 450 micron pixel pitch. However, both are about four times worse in variance

Fine-Pitch CdTe Detector for Hard X-Ray Imaging and Spectroscopy of the Sun with the FOXSI Rocket Experiment

Science.gov (United States)

Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'lchiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Bultrago-Casas, Juan Camilo; Krucker, Sam;

Basic performance and stability of a CdTe solid-state detector panel.

Science.gov (United States)

Tsuchiya, Katsutoshi; Takahashi, Isao; Kawaguchi, Tsuneaki; Yokoi, Kazuma; Morimoto, Yuuichi; Ishitsu, Takafumi; Suzuki, Atsurou; Ueno, Yuuichirou; Kobashi, Keiji

2010-05-01

We have developed a prototype gamma camera system (R1-M) using a cadmium telluride (CdTe) detector panel and evaluated the basic performance and the spectral stability. The CdTe panel consists of 5-mm-thick crystals. The field of view is 134 x 268 mm comprising 18,432 pixels with a pixel pitch of 1.4 mm. Replaceable small CdTe modules are mounted on to the circuit board by dedicated zero insertion force connectors. To make the readout circuit compact, the matrix read out is processed by dedicated ASICs. The panel is equipped with a cold-air cooling system. The temperature and humidity in the panel were kept at 20 degrees C and below 70% relative humidity. CdTe polarization was suppressed by the bias refresh technique to stabilize the detector. We also produced three dedicated square pixel-matched collimators: LEGP (20 mm-thick), LEHR (27 mm-thick), and LEUHR (35 mm-thick). We evaluated their basic performance (energy resolution, system resolution, and sensitivity) and the spectral stability in terms of short-term (several hours of continuous acquisition) and long-term (infrequent measurements over more than a year) activity. The intrinsic energy resolution (FWHM) acquired with Tc-99m (140.5 keV) was 6.6%. The spatial resolutions (FWHM at a distance of 100 mm) with LEGP, LEHR, and LEUHR collimators were 5.7, 4.9, and 4.2 mm, and the sensitivities were 71, 39, and 23 cps/MBq, respectively. The energy peak position and the intrinsic energy resolution after several hours of operation were nearly the same as the values a few minutes after the system was powered on; the variation of the peak position was <0.2%, and that of the resolution was about 0.3%. Infrequent measurements conducted over a year showed that the variations of the energy peak position and the intrinsic energy resolution of the system were at a similar level to those described above. The basic performance of the CdTe-gamma camera system was evaluated, and its stability was verified. It was shown that the

X-ray micro-beam characterization of a small pixel spectroscopic CdTe detector

Science.gov (United States)

Veale, M. C.; Bell, S. J.; Seller, P.; Wilson, M. D.; Kachkanov, V.

2012-07-01

A small pixel, spectroscopic, CdTe detector has been developed at the Rutherford Appleton Laboratory (RAL) for X-ray imaging applications. The detector consists of 80 × 80 pixels on a 250 μm pitch with 50 μm inter-pixel spacing. Measurements with an 241Am γ-source demonstrated that 96% of all pixels have a FWHM of better than 1 keV while the majority of the remaining pixels have FWHM of less than 4 keV. Using the Diamond Light Source synchrotron, a 10 μm collimated beam of monochromatic 20 keV X-rays has been used to map the spatial variation in the detector response and the effects of charge sharing corrections on detector efficiency and resolution. The mapping measurements revealed the presence of inclusions in the detector and quantified their effect on the spectroscopic resolution of pixels.

About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

International Nuclear Information System (INIS)

Marin, E.; Calderon, A.; Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J.; Saucedo, E.; Ruiz, C.M.

2006-01-01

CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 μm, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10 3 cm -1 because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several growth

Carrier Transport, Recombination, and the Effects of Grain Boundaries in Polycrystalline Cadmium Telluride Thin Films for Photovoltaics

Science.gov (United States)

Tuteja, Mohit

Cadmium Telluride (CdTe), a chalcogenide semiconductor, is currently used as the absorber layer in one of the highest efficiency thin film solar cell technologies. Current efficiency records are over 22%. In 2011, CdTe solar cells accounted for 8% of all solar cells installed. This is because, in part, CdTe has a low degradation rate, high optical absorption coefficient, and high tolerance to intrinsic defects. Solar cells based on polycrystalline CdTe exhibit a higher short-circuit current, fill factor, and power conversion efficiency than their single crystal counterparts. This is despite the fact that polycrystalline CdTe devices exhibit lower open-circuit voltages. This is contrary to the observation for silicon and III-V semiconductors, where material defects cause a dramatic drop in device performance. For example, grain boundaries in covalently-bonded semiconductors (a) act as carrier recombination centers, and (b) lead to localized energy states, causing carrier trapping. Despite significant research to date, the mechanism responsible for the superior current collection properties of polycrystalline CdTe solar cells has not been conclusively answered. This dissertation focuses on the macro-scale electronic band structure, and micro scale electronic properties of grains and grain boundaries in device-grade CdTe thin films to answer this open question. My research utilized a variety of experimental techniques. Samples were obtained from leading groups fabricating the material and devices. A CdCl 2 anneal is commonly performed as part of this fabrication and its effects were also investigated. Photoluminescence (PL) spectroscopy was employed to study the band structure and defect states in CdTe polycrystals. Cadmium vacancy- and chlorine-related states lead to carrier recombination, as in CdTe films grown by other methods. Comparing polycrystalline and single crystal CdTe, showed that the key to explaining the improved performance of polycrystalline CdTe does

Comparative study for small computer supported clearance determination with 131iodine hippuran using CdTe detectors

International Nuclear Information System (INIS)

Duerr, G.

1986-01-01

With the goal to work out a simple, non-invasive method for the total clearance determination also for immobile patients, we carried out this clearance study with CdTe semi-conductor detectors. The 131 iodine hippuran clearance determination was carried out on 69 patients in the nuclear medicine department of the Radiological Policlinic in the framework of a routine diagnosis with ambulant and stationary patients with a gamma camera and a connecting evaluation system. At the same time we recorded the shoulder curves using two CdTe semi-conductor detectors and deposited the data in a portable semi-conductor memory. Next the hypotheses for the routine use with the inclusion of commercially common small computers was worked out. The plasma disappearance curves which were recorded over the shoulder region were evaluated with a small computer according to the method of the modified Oberhausen tables and the Oberhausen formula. (orig./DG) [de

On the doping problem of CdTe films: The bismuth case

Energy Technology Data Exchange (ETDEWEB)

Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

2008-08-30

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

On the doping problem of CdTe films: The bismuth case

International Nuclear Information System (INIS)

Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

2008-01-01

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

Photoluminescence measurement of polycrystalline CdTe made of high purity source material

Energy Technology Data Exchange (ETDEWEB)

Hempel, Hannes; Kraft, Christian; Heisler, Christoph; Geburt, Sebastian; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, Friedrich Schiller Universitaet Jena, Helmholtzweg 3, 07743 Jena (Germany)

2012-07-01

CdTe is a common material for thin film solar cells. However, the mainly used CdTe source material is known to contain a high number of intrinsic defects and impurities. In this work we investigate the defect structure of high purity CdTe by means of Photoluminescence, which is a common method to detect the energy levels of defects in the band gap of semiconductors. We used a 633 nm HeNe-Laser at sample temperatures of 8 K. The examined samples were processed in a new vacuum system based on the PVD method. They yield significantly different spectra on as-grown samples compared to those measured on samples which are grown by the standard process, since the double peak at 1.55 eV was hardly detectable and the A-center correlated transition vanished. Instead a peak at 1.50 eV with pronounced phonon coupling was observed. The 1.50 eV peak is known from other measurements but has not been characterized so far. The intention of this work is to characterize this new feature and the influence of post deposition treatments of the CdTe layers on the PL spectra.

Measurements of low noise 64 channel counting ASIC for Si and CdTe strip detectors

International Nuclear Information System (INIS)

Kachel, M; Grybos, P; Szczygiel, R; Takeyoshi, T

2011-01-01

We present the design and performance of a 64-channel ASIC called SXDR64. The circuit is intended to work with DC coupled CdTe detectors as well as with standard AC coupled Si detectors. A single channel of the ASIC consists of a charge sensitive amplifier with a pole-zero cancellation circuit, a 4 th order programmable shaper, a base-line restorer and two independent discriminators with 20-bit counters equipped with RAM. The circuit is able to operate correctly with both polarities of the input signal and the detectors leakage current in a few nA range, with the average rate of input pulses up to 1 Mcps.

About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

Energy Technology Data Exchange (ETDEWEB)

Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

2006-07-01

CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

Thrombus detection using 125I-fibrinogen and a CdTe probe

International Nuclear Information System (INIS)

Garcia, D.A.; Frisbie, J.H.; Tow, D.E.; Sasahara, A.A.; Entine, G.

1976-01-01

A compact CdTe detector system was developed for use in a clinical screening test for venous thrombosis of the legs. Patients given intravenously administered autologous 125 I-fibrinogen were probed externally at selected points on the thighs and calves for abnormal accumulations of radioactivity. Measurements made with the CdTe probe were compared to those obtained with a standard portable NaI detector system. The CdTe probe was the equal of the NaI detector in diagnostic capability. The compact design of the semiconductor system considerably eased the probing procedure, especially in bedridden patients with limited mobility of the extremities

IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

International Nuclear Information System (INIS)

Gevin, O.; Baron, P.; Coppolani, X.; Delagnes, E.; Lugiez, F.; Daly, F.; Limousin, O.; Meuris, A.; Pinsard, F.; Renaud, D.

2009-01-01

The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e - rms) and to its radiation hardened design (Single Event Latch-up Linear Energy Transfer threshold of 56 MeV.cm 2 .mg -1 ), the chip is well suited for soft X-rays energy discrimination and high energy resolution, 'space proof', hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7e - /pF obtained with a 6 μs peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky mono-pixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission. (authors)

IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

Science.gov (United States)

Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

2009-08-01

The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

International Nuclear Information System (INIS)

Montemont, Guillaume

2000-01-01

This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author) [fr

Indigenous development of diamond detectors for monitoring neutrons

International Nuclear Information System (INIS)

Singh, Arvind; Amit Kumar; Topkar, Anita; Pithawa, C.K.

2013-01-01

High purity synthetic chemically vapor deposited (CVD) diamond has several outstanding characteristics that make it as an important material for detector applications specifically for extreme environmental conditions like high temperature, high radiation, and highly corrosive environments. Diamond detectors are especially considered promising for monitoring fast neutrons produced by the D-T nuclear fusion reactions in next generation fusion facilities such as ITER. When fast neutrons interact with carbon, elastic, inelastic and (n,α) type reactions can occur. These reactions can be employed for the detection of fast neutrons using diamond. We have initiated the development of diamond detectors based on synthetic CVD substrates. In this paper, the first test of a polycrystalline CVD diamond detector with fast neutrons is reported. The test results demonstrate that this detector can be used for monitoring fast neutrons. The diamond detectors have been fabricated using 5 mm x 5 mm, 300 μm polycrystalline diamond substrates. Aluminum metallization has been used on both sides of the detector to provide electrical contacts. The performance of fabricated detectors was first evaluated using current and capacitance measurements. The leakage current was observed to be stable and about a few pAs for voltages up to 300V. The capacitance-voltage characteristics showed a constant capacitance which is as expected. To confirm the response of the detector to charged particles, the pulse height spectrum (PHS) was obtained using 238 Pu- 239 Pu dual α- source. The PHS showed a continuum without any peak due to polycrystalline nature of diamond film. The response of the detector to fast neutrons has been studied using the fast neutron facility at NXF, BARC. The PHS obtained for a neutron yield of 4 x 10 8 n/s is shown. The average counts per second (cps) measured for diamond detector for different neutron yields is shown. The plot shows linearity with coefficient of determination R

CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

CERN Document Server

Ricq, S; Garcin, M

2000-01-01

The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

Application of CdTe for the NeXT mission

International Nuclear Information System (INIS)

Takahashi, Tadayuki; Nakazawa, Kazuhiro; Watanabe, Shin; Sato, Goro; Mitani, Takefumi; Tanaka, Takaaki; Oonuki, Kousuke; Tamura, Ken'ichi; Tajima, Hiroyasu; Kamae, Tuneyoshi; Madejski, Greg; Nomachi, Masaharu; Fukazawa, Yasushi; Makishima, Kazuo; Kokubun, Motohide; Terada, Yukikatsu; Kataoka, Jun; Tashiro, Makoto

2005-01-01

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ-ray detection. The high-atomic number of the materials (Z Cd =48,Z Te =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (E g =1.5eV) allows to operate the detector at room temperature. Based on recent achievements in high-resolution CdTe detectors, in the technology of ASICs and in bump-bonding, we have proposed the novel hard X-ray and γ-ray detectors for the NeXT mission in Japan. The high-energy response of the super mirror onboard NeXT will enable us to perform the first sensitive imaging observations up to 80keV. The focal plane detector, which combines a fully depleted X-ray CCD and a pixellated CdTe detector, will provide spectra and images in the wide energy range from 0.5 to 80keV. In the soft γ-ray band up to ∼ 1MeV, a narrow field-of-view Compton γ-ray telescope utilizing several tens of layers of thin Si or CdTe detector will provide precise spectra with much higher sensitivity than present instruments. The continuum sensitivity will reach several x10 -8 photons -1 keV -1 cm -2 in the hard X-ray region and a few x10 -7 photons -1 keV -1 cm -2 in the soft γ-ray region

Electrical characterization of CdTe grain-boundary properties from as processed CdTe/CdS solar cells

Energy Technology Data Exchange (ETDEWEB)

Woods, L.M.; Robinson, G.Y. [Colorado State Univ., Fort Collins, CO (United States); Levi, D.H.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States); Kaydanov, V. [Colorado School of Mines, Golden, CO (United States)

1998-09-01

An ability to liftoff or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. The authors use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of the grain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. The light and dark barrier potentials change after the NP etch, and the origin of this change is postulated. Also, a variable doping density within the grains of non-etched material has been determined. These results allow a semi-quantitative grain-boundary band diagram to be drawn that should aid in determining more accurate two-dimensional models for polycrystalline CdTe solar cells.

Studies and development of a readout ASIC for pixelated CdTe detectors for space applications

International Nuclear Information System (INIS)

Michalowska, A.

2013-01-01

The work presented in this thesis is part of a project where a new instrument is developed: a camera for hard X-rays imaging spectroscopy. It is dedicated to fundamental research for observations in astrophysics, at wavelengths which can only be observed using space-borne instruments. In this domain the spectroscopic accuracy as well as the imaging details are of high importance. This work has been realized at CEA/IRFU (Institut de Recherche sur les lois Fondamentales de l'Univers), which has a long-standing and successful experience in instruments for high energy physics and space physics instrumentation. The objective of this thesis is the design of the readout electronics for a pixelated CdTe detector, suitable for a stacked assembly. The principal parameters of this integrated circuit are a very low noise for reaching a good accuracy in X-ray energy measurement, very low power consumption, a critical parameter in space-borne applications, and a small dead area for the full system combining the detector and the readout electronics. In this work I have studied the limits of these three parameters in order to optimize the circuit. In terms of the spectral resolution, two categories of noise had to be distinguished to determine the final performance. The first is the Fano noise limit, related to detector interaction statistics, which cannot be eliminated. The second is the electronic noise, also unavoidable; however it can be minimized through optimization of the detection chain. Within the detector, establishing a small pixel pitch of 300 μm reduces the input capacitance and the dark current. This limits the effects of the electronic noise. Also in order to limit the input capacitance the future camera is designed as a stacked assembly of the detector with the readout ASIC. This allows to reach extremely good input parameters seen by the readout electronics: a capacitance in range of 0.3 pF-1 pF and a dark current below 5 pA. In the frame of this thesis I have

Edge effects in a small pixel CdTe for X-ray imaging

Science.gov (United States)

Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

2013-10-01

Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

A pixellated γ-camera based on CdTe detectors clinical interests and performances

International Nuclear Information System (INIS)

Chambron, J.; Arntz, Y.; Eclancher, B.; Scheiber, Ch.; Siffert, P.; Hage Hali, M.; Regal, R.; Kazandjian, A.; Prat, V.; Thomas, S.; Warren, S.; Matz, R.; Jahnke, A.; Karman, M.; Pszota, A.; Nemeth, L.

2000-01-01

A mobile gamma camera dedicated to nuclear cardiology, based on a 15 cmx15 cm detection matrix of 2304 CdTe detector elements, 2.83 mmx2.83 mmx2 mm, has been developed with a European Community support to academic and industrial research centres. The intrinsic properties of the semiconductor crystals - low-ionisation energy, high-energy resolution, high attenuation coefficient - are potentially attractive to improve the γ-camera performances. But their use as γ detectors for medical imaging at high resolution requires production of high-grade materials and large quantities of sophisticated read-out electronics. The decision was taken to use CdTe rather than CdZnTe, because the manufacturer (Eurorad, France) has a large experience for producing high-grade materials, with a good homogeneity and stability and whose transport properties, characterised by the mobility-lifetime product, are at least 5 times greater than that of CdZnTe. The detector matrix is divided in 9 square units, each unit is composed of 256 detectors shared in 16 modules. Each module consists in a thin ceramic plate holding a line of 16 detectors, in four groups of four for an easy replacement, and holding a special 16 channels integrated circuit designed by CLRC (UK). A detection and acquisition logic based on a DSP card and a PC has been programmed by Eurorad for spectral and counting acquisition modes. Collimators LEAP and LEHR from commercial design, mobile gantry and clinical software were provided by Siemens (Germany). The γ-camera head housing, its general mounting and the electric connections were performed by Phase Laboratory (CNRS, France). The compactness of the γ-camera head, thin detectors matrix, electronic readout and collimator, facilitates the detection of close γ sources with the advantage of a high spatial resolution. Such an equipment is intended to bedside explorations. There is a growing clinical requirement in nuclear cardiology to early assess the extent of an infarct

Development of a 32-detector CdTe matrix for the SVOM ECLAIRs X/Gamma camera: Preliminary results

Energy Technology Data Exchange (ETDEWEB)

Lacombe, K., E-mail: karine.lacombe@irap.omp.eu [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Nasser, G.; Amoros, C.; Atteia, J.-L.; Barret, D. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Billot, M. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Cordier, B.; Gevin, O. [CEA, IRFU, 91191 Gif-sur-Yvette (France); Godet, O. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Gonzalez, F. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Houret, B.; Landé, J. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Lugiez, F. [CEA, IRFU, 91191 Gif-sur-Yvette (France); Mandrou, P.; Martin, J.-A.; Marty, W. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Mercier, K. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Pons, R.; Rambaud, D.; Ramon, P. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); and others

2013-12-21

ECLAIRs, a 2D coded-mask imaging telescope on the Sino-French SVOM space mission, will detect and locate gamma-ray bursts (GRBs) between 4 and 150 keV. The detector array is an assembly of 6400 Schottky CdTe detectors of size 4×4×1 mm{sup 3}, biased from −100 V to −600 V and operated at −20 °C to minimize the leakage current and maximize the polarization time. The remarkable low-energy threshold is achieved through various steps: an extensive detectors selection, a low-noise 32 channels ASIC study, and the design of an innovative detection module called XRDPIX formed by a thick film ceramic holding 32 detectors, a high voltage grid and an HTCC substrate housing the ASIC within a hermetic cavity. In this paper, we describe the XRDPIX module and explain the results of first tests to measure the linearity and compare the sources of noise, such as leakage currents and the Equivalent Noise Charge (ENC) measured on ASIC Ceramics. We confront these values with the energy threshold and spectral resolution made with dedicated test benches. Finally, we present the superposition of 32 calibrated spectra of one XRDPIX module, showing the excellent homogeneity of the 32 detectors and the achievement of a detection threshold at 4 keV over the entire module. -- Highlights: •We develop X and gamma rays detection modules to shape a space telescope. •The main goal of 4 keV threshold is reached thanks to a new hybrid based on CdTe. •Great spectral performance depends on low equivalent noise charge of ASIC on ceramics. •We study the good linearity of the calibration curve below the 16 keV energy. •An outgassing stage will decrease the leakage current of detectors glued on ceramics.

Solid-state cadmium telluride radiation detector

Energy Technology Data Exchange (ETDEWEB)

Takeuchi, Yoji; Kitamoto, Hisashi; Hosomatsu, Haruo

1984-09-01

The growth of CdTe single crystal and its application to CdTe detector array was studied for X-ray computed tomography (XCT) equipment. A p-type CdTe single crystal with 10/sup 4/ ohm.cm specific resistivity was grown in a quartz ampoule under vapor pressure control of Cd in a vertical Bridgman furnace. An 18-element detector array was fabricated with this single crystal. The detector was operated with no bias and the sensitivity was confirmed to be between 2.8 x 10/sup -12/ and 14 x 10/sup -12/ A.h/(R.mm/sup 2/). Commercial CdTe single crystal was used to manufacture as 560-element detector array for XCT. Results show that CdTe detector is sensitive, linear and has high resolution.

Fast photoconductor CdTe detectors for synchrotron x-ray studies

International Nuclear Information System (INIS)

Yoo, Sung Shik; Faurie, J.P.; Huang Qiang; Rodricks, B.

1993-09-01

The Advanced Photon Source will be that brightest source of synchrotron x-rays when it becomes operational in 1996. During normal operation, the ring will be filled with 20 bunches of positrons with an interbunch spacing of 177 ns and a bunch width of 119 ps. To perform experiments with x-rays generated by positrons on these time scales one needs extremely high speed detectors. To achieve the necessary high speed, we are developing MBE-grown CdTe-base photoconductive position sensitive array detectors. The arrays fabricated have 64 pixels with a gap of 100 μm between pixels. The high speed response of the devices was tested using a short pulse laser. X-ray static measurements were performed using an x-ray tube and synchrotron radiation to study the device's response to flux and wavelength changes. This paper presents the response of the devices to some of these tests and discusses different physics aspects to be considered when designing high speed detectors

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

Energy Technology Data Exchange (ETDEWEB)

Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation

CERN Document Server

Niraula, M; Aoki, T; Tomita, Y; Hatanaka, Y

2002-01-01

High-energy resolution diode type CdTe detectors were fabricated by growing an n-type epitaxial layer on high resistivity p-like crystal wafers, and their stability issues during a long-term operation were studied. Room temperature stability of the detectors was not good at low operating biases of around 200 V. However, it could be improved significantly by operating them at higher biases under full depletion conditions. On the other hand, detectors exhibited excellent stability by cooling them slightly below room temperature down to 0 deg. C. The effect of this low level of cooling on detector stability was found to be more significant than that of applying high biases at room temperature. By using the detector type presented here, stable operation could be obtained at moderate operating voltages of around 400 V and with a modest degree of cooling.

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Science.gov (United States)

Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

2018-05-01

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

CdTe quantum dots for an application in the life sciences

International Nuclear Information System (INIS)

Thuy, Ung Thi Dieu; Toan, Pham Song; Chi, Tran Thi Kim; Liem, Nguyen Quang; Khang, Dinh Duy

2010-01-01

This report highlights the results of the preparation of semiconductor CdTe quantum dots (QDs) in the aqueous phase. The small size of a few nm and a very high luminescence quantum yield exceeding 60% of these materials make them promisingly applicable to bio-medicine labeling. Their strong, two-photon excitation luminescence is also a good characteristic for biolabeling without interference with the cell fluorescence. The primary results for the pH-sensitive CdTe QDs are presented in that fluorescence of CdTe QDs was used as a proton sensor to detect proton flux driven by adenosine triphosphate (ATP) synthesis in chromatophores. In other words, these QDs could work as pH-sensitive detectors. Therefore, the system of CdTe QDs on chromatophores prepared from the cells of Rhodospirillum rubrum and the antibodies against the beta-subunit of F0F1–ATPase could be a sensitive detector for the avian influenza virus subtype A/H5N1

CdTe detector based PIXE mapping of geological samples

Energy Technology Data Exchange (ETDEWEB)

Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

2014-01-01

A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

Growth and analysis of micro and nano CdTe arrays for solar cell applications

Science.gov (United States)

Aguirre, Brandon Adrian

CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An

Neutron Detection at JET Using Artificial Diamond Detectors

International Nuclear Information System (INIS)

Pillon, M.; Angelone, M.; Lattanzi, D.; Milani, E.; Tucciarone, A.; Verona-Rinati, G.; Popovichev, S.; Murari, A.

2006-01-01

Three CVD diamond detectors are installed and operated at Joint European Torus, Culham laboratory. Diamond detectors are very promising detectors to be used in fusion environment due to their radiation hardness, gamma discrimination properties, fast response and spectroscopy properties. The aim of this work is to test and qualify artificial diamond detectors as neutron counters and spectrometers on a large fusion device. Two of these detectors are polycrystalline CVD diamond films of thickness 30 mm and 40 mm respectively while the third detector is a monocrystalline CVD of 110 mm thickness. The first polycrystalline diamond is covered with 4 mm of LiF 95 % enriched in 6 Li and enclosed inside a polyethylene moderator cap. This detector is used with a standard electronic chain made with a charge preamplifier, shaping amplifier and threshold discriminator. It is used to measure the time-dependent total neutron yield produced by JET plasma and its signal is compared with JET fission chambers. The second polycrystalline diamond is connected with a fast (1 GHz) preamplifier and a threshold discriminator via a long (about 100 m) double screened cable. This detector is used to detect the 14 MeV neutrons produced by triton burn-up using the reaction 12 C (n, α) 9 Be which occurs in diamond and a proper discriminator threshold. The response of this detector is fast and the electronic is far from the high radiation environment. Its signal is used in comparison with JET silicon diodes. The third monocrystalline diamond is also connected using a standard electronic and is used to demonstrate the feasibility of 14 MeV neutron spectrometry at about 3% peak resolution taking advantage of the spectrometer properties of monocrystalline diamonds. The results obtained are presented in this work. (author)

CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

International Nuclear Information System (INIS)

Szeles, Csaba

2004-01-01

Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1-x Zn x Te-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1-x Zn x Te detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Time-resolved x-ray diffraction techniques for bulk polycrystalline materials under dynamic loading

Energy Technology Data Exchange (ETDEWEB)

Lambert, P. K.; Hustedt, C. J.; Zhao, M.; Ananiadis, A. G.; Hufnagel, T. C. [Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Vecchio, K. S. [Department of NanoEngineering, University of California San Diego, La Jolla, California 92093 (United States); Huskins, E. L. [Oak Ridge Institute for Science and Education, Oak Ridge, Tennessee 37830 (United States); US Army Research Laboratory, Aberdeen Proving Ground, Aberdeen, Maryland 21005 (United States); Casem, D. T. [US Army Research Laboratory, Aberdeen Proving Ground, Aberdeen, Maryland 21005 (United States); Gruner, S. M. [Department of Physics, Cornell University, Ithaca, New York 14853 (United States); Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853 (United States); Tate, M. W.; Philipp, H. T.; Purohit, P.; Weiss, J. T. [Department of Physics, Cornell University, Ithaca, New York 14853 (United States); Woll, A. R. [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, New York 14853 (United States); Kannan, V.; Ramesh, K. T. [Department of Mechanical Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Kenesei, P.; Okasinski, J. S.; Almer, J. [X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

2014-09-15

We have developed two techniques for time-resolved x-ray diffraction from bulk polycrystalline materials during dynamic loading. In the first technique, we synchronize a fast detector with loading of samples at strain rates of ∼10{sup 3}–10{sup 4} s{sup −1} in a compression Kolsky bar (split Hopkinson pressure bar) apparatus to obtain in situ diffraction patterns with exposures as short as 70 ns. This approach employs moderate x-ray energies (10–20 keV) and is well suited to weakly absorbing materials such as magnesium alloys. The second technique is useful for more strongly absorbing materials, and uses high-energy x-rays (86 keV) and a fast shutter synchronized with the Kolsky bar to produce short (∼40 μs) pulses timed with the arrival of the strain pulse at the specimen, recording the diffraction pattern on a large-format amorphous silicon detector. For both techniques we present sample data demonstrating the ability of these techniques to characterize elastic strains and polycrystalline texture as a function of time during high-rate deformation.

A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications.

Science.gov (United States)

Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

2015-10-01

We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μ W. In acquisition mode, the total power consumption of every pixel is 200 μ W. An equivalent noise charge (ENC) of 160 e - RMS at maximum gain and negative polarity conditions has been measured at room temperature.

Characterization of paraffin based breast tissue equivalent phantom using a CdTe detector pulse height analysis.

Science.gov (United States)

Cubukcu, Solen; Yücel, Haluk

2016-12-01

In this study, paraffin was selected as a base material and mixed with different amounts of CaSO 4 ·2H 2 O and H 3 BO 3 compounds in order to mimic breast tissue. Slab phantoms were produced with suitable mixture ratios of the additives in the melted paraffin. Subsequently, these were characterized in terms of first half-value layer (HVL) in the mammographic X-ray range using a pulse-height spectroscopic analysis with a CdTe detector. Irradiations were performed in the energy range of 23-35 kV p under broad beam conditions from Mo/Mo and Mo/Rh target/filter combinations. X-ray spectra were acquired with a CdTe detector without and with phantom material interposition in increments of 1 cm thickness and then evaluated to obtain the transmission data. The net integral areas of the spectra for the slabs were used to plot the transmission curves and these curves were fitted to the Archer model function. The results obtained for the slabs were compared with those of standard mammographic phantoms such as CIRS BR series phantoms and polymethylmethacrylate plates (PMMA). From the evaluated transmission curves, the mass attenuation coefficients and HVLs of some mixtures are close to those of the commercially available standard mammography phantoms. Results indicated that when a suitable proportion of H 3 BO 3 and CaSO 4 ·2H 2 O is added to the paraffin, the resulting material may be a good candidate for a breast tissue equivalent phantom.

Study and development of new CdTe and CdZnTe detection structures for X and {gamma} imagery; Etude et realisation de nouvelles structures de detection a base de CdTe et CdZnTe pour l`imagerie X et {gamma}

Energy Technology Data Exchange (ETDEWEB)

Rosaz, M

1997-10-24

The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and {gamma}- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based {gamma}- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field`s non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and {gamma}- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and {gamma}- ray imaging. (author) 93 refs.

Study and development of new CdTe and CdZnTe detection structures for X and γ imagery

International Nuclear Information System (INIS)

Rosaz, M.

1997-01-01

The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and γ- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based γ- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field's non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and γ- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and γ- ray imaging. (author)

Development of Optical Fiber Detector for Measurement of Fast Neutron

International Nuclear Information System (INIS)

YAGI, Takahiro; KAWAGUCHI, Shinichi; MISAWA, Tsuyoshi; PYEON, Cheol Ho; UNESAKI, Hironobu; SHIROYA, Seiji; OKAJIMA, Shigeaki; TANI, Kazuhiro

2008-01-01

Measurement of fast neutron flux is important for investigation of characteristic of fast reactors. In order to insert a neutron detector in a narrow space such as a gap of between fuel plates and measure the fast neutrons in real time, a neutron detector with an optical fiber has been developed. This detector consists of an optical fiber whose tip is covered with mixture of neutron converter material and scintillator such as ZnS(Ag). The detector for fast neutrons uses ThO 2 as converter material because 232 Th makes fission reaction with fast neutrons. The place where 232 Th can be used is limited by regulations because 232 Th is nuclear fuel material. The purpose of this research is to develop a new optical fiber detector to measure fast neutrons without 232 Th and to investigate the characteristic of the detector. These detectors were used to measure a D-T neutron generator and fast neutron flux distribution at Fast Critical Assembly. The results showed that the fast neutron flux distribution of the new optical fiber detector with ZnS(Ag) was the same as it of the activation method, and the detector are effective for measurement of fast neutrons. (authors)

Measurements of Ultra-Fast single photon counting chip with energy window and 75 μm pixel pitch with Si and CdTe detectors

International Nuclear Information System (INIS)

Maj, P.; Grybos, P.; Kasinski, K.; Koziol, A.; Krzyzanowska, A.; Kmon, P.; Szczygiel, R.; Zoladz, M.

2017-01-01

Single photon counting pixel detectors become increasingly popular in various 2-D X-ray imaging techniques and scientific experiments mainly in solid state physics, material science and medicine. This paper presents architecture and measurement results of the UFXC32k chip designed in a CMOS 130 nm process. The chip consists of about 50 million transistors and has an area of 9.64 mm × 20.15 mm. The core of the IC is a matrix of 128 × 256 pixels of 75 μm pitch. Each pixel contains a CSA, a shaper with tunable gain, two discriminators with correction circuits and two 14-bit ripple counters operating in a normal mode (with energy window), a long counter mode (one 28-bit counter) and a zero-dead time mode. Gain and noise performance were verified with X-ray radiation and with the chip connected to Si (320 μm thick) and CdTe (750 μ m thick) sensors.

Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

Energy Technology Data Exchange (ETDEWEB)

Sato, Goro, E-mail: gsato@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Watanabe, Shin; Ikeda, Hirokazu; Ohta, Masayuki; Ishikawa, Shin' nosuke [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Shiraki, Hiroyuki; Ohno, Ryoichi [ACRORAD Co., Ltd., 13-23 Suzaki, Uruma, Okinawa 904-2234 (Japan)

2011-10-01

Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

International Nuclear Information System (INIS)

Tariq, G.H.; Anis-ur-Rehman, M.

2011-01-01

The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

Design Strategies for High-Efficiency CdTe Solar Cells

Science.gov (United States)

Song, Tao

monocrystalline CdTe cells. Several substrate materials have been discussed and all have challenges. These have generally been addressed through the addition of intermediate layers between the substrate and CdTe absorber. InSb is an attractive substrate choice for CdTe devices, because it has a close lattice match with CdTe, it has low resistivity, and it is easy to contact. However, the valence-band alignment between InSb and p-type CdTe, which can both impede hole current and enhance forward electron current, is not favorable. In addition, the CdTe/back contact interface plays a significant role in carrier transport for conventional polycrystalline thin-film CdTe devices. A significant back-contact barrier φb caused by metallic contact with low work function can block hole transport and enhance the forward current and thus result in a reduced VOC, particularly with fully-depleted CdTe devices. A buffer contact layer between CdTe absorber and metallic contact is strongly needed to mitigate this detrimental impact. The simulation has shown that a thin tellurium (Te) buffer as well as a highly doped p-type CdTe layer can assume such a role by reducing the downward valence-band bending caused by large φb and hence enhancing the extraction of the charge carriers. Finally, experimental CdTe cells are discussed in parallel with the simulation results to identify limiting mechanisms and give guidance for future efficiency improvement. For the monocrystalline CdTe cells made at NREL, it is found that the sputter damage causing large numbers of defect states near the Cd(S,O)/CdTe interface plays an important role in limiting cell performance, particularly for cells with low oxygen Cd(

Thick epitaxial CdTe films grown by close space sublimation on Ge substrates

Energy Technology Data Exchange (ETDEWEB)

Jiang, Q; Haliday, D P; Tanner, B K; Brinkman, A W [Department of Physics, University of Durham. Science Site, Durham, DH1 3LE (United Kingdom); Cantwell, B J; Mullins, J T; Basu, A [Durham Scientific Crystals Ltd., NetPark, Thomas Wright Way, Sedgefield, County Durham, TS21 3FD (United Kingdom)], E-mail: Q.Z.Jiang@durham.ac.uk

2009-01-07

This paper reports, for the first time, the successful growth of 200 {mu}m thick CdTe films on mis-oriented Ge(1 0 0) substrates by a cost-effective optimized close space sublimation method. It is found that, as the thickness increases to a few hundred micrometres, subgrains are formed probably as a result of the large density of dislocations and strain within the initial interfacial layers. The films are of high quality (x-ray rocking curve width {approx}100 arcsec) and high resistance ({approx}10{sup 9} {omega} cm), and are thus candidates for x-ray and {gamma}-ray detectors. (fast track communication)

Fast Timing for Collider Detectors

CERN Multimedia

CERN. Geneva

2017-01-01

Advancements in fast timing particle detectors have opened up new possibilities to design collider detectors that fully reconstruct and separate event vertices and individual particles in the time domain. The applications of these techniques are considered for the physics at HL-LHC.

Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure

International Nuclear Information System (INIS)

Fernandes, Jaquiel Salvi

2005-02-01

In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of 241 Am, 133 Ba, 152 Eu, 3 sources of 137 Cs and soil samples contaminated with 137 Cs. It was performed a factorial planning 2 3 to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 μS and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the 137 Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the 137 Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample 7 Be content the MDA found was 2867 Bq.kg -1 at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the 137 Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured 137 Cs MDA was 71 Bq.kg -1 . For the soil sample 7 Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg -1 . Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma ray spectrometer system allows the quantification of 137 Cs and 7 Be

Sensitization by UV light of α-Al2O3:C polycrystalline detectors

International Nuclear Information System (INIS)

Meira B, L. C.; Rubio F, H.; Neres de A, E.; Santos, A.

2014-08-01

This paper describes an increase in sensitivity to gamma and beta radiation on α-Al 2 O 3 :C polycrystalline detector, which has been produced by a sol-gel process, following previous exposure to ultraviolet light. The increased sensitivity of the detector as a function of the exposure time and ultraviolet wavelength was studied. Since the main luminescent centers have emission peaks at different wavelengths, selective measurements of thermoluminescent emission intensity were done, in order to investigate the possible conversion of centers as a result of the exposition to ultraviolet light. Experimental results indicate that the nature and parameters of the luminescent centers in α-Al 2 O 3 :C sol-gel material can be very different of those in α-Al 2 O 3 :C single crystal. (author)

Diodes based on semi-insulating CdTe crystals with Mo/MoO{sub x} contacts for X- and γ-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Maslyanchuk, O.; Kulchynsky, V.; Solovan, M. [Chernivtsi National University, Chernivtsi (Ukraine); Gnatyuk, V. [Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (Ukraine); Potiriadis, C. [Greek Atomic Energy Commission, Attiki (Greece); Kaissas, I. [Greek Atomic Energy Commission, Attiki (Greece); Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki (Greece); Brus, V. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2017-03-15

This paper reports on the possible applications of molybdenum oxide (Mo/MoO{sub x}) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Applications of CdTe to nuclear medicine. Final report

International Nuclear Information System (INIS)

Entine, G.

1985-01-01

Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

Ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

2013-12-01

We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

nGEM fast neutron detectors for beam diagnostics

International Nuclear Information System (INIS)

Croci, G.; Claps, G.; Cavenago, M.; Dalla Palma, M.; Grosso, G.; Murtas, F.; Pasqualotto, R.; Perelli Cippo, E.; Pietropaolo, A.; Rebai, M.; Tardocchi, M.; Tollin, M.; Gorini, G.

2013-01-01

Fast neutron detectors with a sub-millimetric space resolution are required in order to qualify neutron beams in applications related to magnetically-controlled nuclear fusion plasmas and to spallation sources. A nGEM detector has been developed for the CNESM diagnostic system of the SPIDER NBI prototype for ITER and as beam monitor for fast neutrons lines at spallation sources. The nGEM is a triple GEM gaseous detector equipped with polypropylene and polyethylene layers used to convert fast neutrons into recoil protons through the elastic scattering process. This paper describes the results obtained by testing a nGEM detector at the ISIS spallation source on the VESUVIO beam line. Beam profiles (σ x =14.35 mm, σ y =15.75 mm), nGEM counting efficiency (around 10 -4 for 3 MeV n <15 MeV), detector stability (≈4.5%) and the effect of filtering the beam with different type of materials were successfully measured. The x beam profile was compared to the one measured by a single crystal diamond detector. Finally, the efficiency of the detector was simulated exploiting the GEANT4 tool

Preliminary report on the development of a high resolution PET camera using semiconductor detectors

International Nuclear Information System (INIS)

Kikuchi, Yohei; Ishii, Keizo; Yamazaki, Hiromichi; Matsuyama, Shigeo; Yamaguchi, Takashi; Yamamoto, Yusuke; Sato, Takemi; Aoki, Yasushi; Aoki, Kenichi

2005-01-01

We are developing a PET camera using small semiconductor detectors, whose resolution is equivalent to the physical limit of spatial resolution. First, a coincidence system of 16 Schottky CdTe detectors of 0.5 mm width obtained a resolution of <1 mm and it was confirmed that the Schottky CdTe detector is suitable for high resolution PET. Next, the performance of a pair of 32 channel CdTe arrays (1.2 mm width per channel) was investigated for the development of the prototype of high resolution PET. The time resolution between opposing detector pair was 13 ns (FWHM) when high voltage (700 V) was applied. The image of a 0.6 mm diameter point source was obtained in an experiment with opposing detector arrays using four channels, indicating that, a higher resolution can be achieved with the 32 channel CdTe array

High-speed imaging at high x-ray energy: CdTe sensors coupled to charge-integrating pixel array detectors

Energy Technology Data Exchange (ETDEWEB)

Becker, Julian; Tate, Mark W.; Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.; Purohit, Prafull [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Chamberlain, Darol [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M., E-mail: smg26@cornell.edu [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States)

2016-07-27

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.

Portable gamma- and X-ray analyzers based on CdTe p-i-n detectors

CERN Document Server

Khusainov, A K; Bahlanov, S V; Derbin, A V; Ivanov, V V; Lysenko, V V; Morozov, F; Mouratov, V G; Muratova, V N; Petukhov, Y A; Pirogov, A M; Polytsia, O P; Saveliev, V D; Solovei, V A; Yegorov, K A; Zhucov, M P

1999-01-01

Several portable instruments are designed using previously reported CdTe detector technology. These can be divided into three groups according to their energy ranges: (1) 3-30 keV XRF analyzers, (2) 5-120 keV wide range XRF analyzers and (3) gamma-ray spectrometers for operation up to 1500 keV. These instruments are used to inspect several hundreds of samples in situ during a working day in applications such as a metal alloy verification at customs control. Heavy metals are identified through a 3-100 mm thick package with these instruments. Surface contamination by heavy metals (for example toxins such as Hg, Th and Pb in housing environmental control), the determination of Pb concentration in gasoline, geophysical control in mining, or nuclear material control are other applications. The weight of these XRF probes is about 1 kg and two electronic designs are used: one with embedded computer and another based on a standard portable PC. The instruments have good precision and high productivity for measurements...

Schottky barrier CdTe(Cl) detectors for planetary missions

International Nuclear Information System (INIS)

Eisen, Yosef; Floyd, Samuel

2002-01-01

Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm x 2mm x 1mm and segmented monolithic 3cm x 3 cm x 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm x 2mm x 1mm CdTe operating at -30 degree sign C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm x 3cm x 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed

Spectroscopic study on the doping of polycrystalline CdTe layers for solar cells; Spektroskopische Untersuchungen zur Dotierung von polykristallinen CdTe-Schichten fuer Solarzellen

Energy Technology Data Exchange (ETDEWEB)

Kraft, Christian

2011-11-29

First in the present thesis the fundamental properties of CdTe are described. In the following it is discussed, how a CdTe solar cell is generally constructed, which specialities are to be regarded, and how an improvement of the actually reachable data of such a solar cell in view of the efficiency can be reached fundamentally and in then practical realization. In the third chapter the physical foundations of the most important methods are discussed, which are applied in the framework of this thesis for the analysis of the CdTe layers. The fourth chapter describes the details of the experiments of this thesis. The fifth chapter deals with the analysis of the photoluminescence of CdTe layers. Special attention is put on the analysis of the excitonic luminescence. The sixth chapter treats the implantation of CdTe layers with phosphor. The influence of phosphorus as dopant on the PL spectra of CdTe and the correponding characteristics of implanted solar cells are presented. Also the influence of radiation damages as consequence of the ion implantation is studied in this chapter by means of the analysis of differently thick absorber layers. In the seventh chapter finally a new procedure for the fabrication of solar cells on the base of CdTe as absorber material is introduced, which shall make possible to change the stoichiometry of cadmium mand tellurium specifically and to present additionally a suited material, in order to form the doping of CdTE a solar-cell material variably. The fundamental properties of the new facility are experimentally determined, and first solar cells are fabricated with this facility and analyzed. Also an in-situ doping with phosphorus is thereby performed and the result studied.

Segmented-spectrum detection mechanism for medical x-ray in CdTe

Science.gov (United States)

Shi, Zaifeng; Meng, Qingzhen; Cao, Qingjie; Yao, Suying

2016-01-01

This paper presents a segmented X-ray spectrum detection method based on a layered X-ray detector in Cadmium Telluride (CdTe) substrate. We describe the three-dimensional structure of proposed detector pixel and investigate the matched spectrum-resolving method. Polychromatic X-ray beam enter the CdTe substrate edge on and will be absorbed completely in different thickness varying with photon energy. Discrete potential wells are formed under external controlling voltage to collect the photo-electrons generated in different layers, and segmented X-ray spectrum can be deduced from the quantity of photo-electrons. In this work, we verify the feasibility of the segmented-spectrum detection mechanism by simulating the absorption of monochromatic X-ray in a CdTe substrate. Experiments in simulation show that the number of photo-electrons grow exponentially with the increase of incident thickness, and photons with different energy will be absorbed in various thickness. The charges generated in different layers are collected into adjacent potential wells, and collection efficiency is estimated to be about 87% for different incident intensity under the 40000V/cm electric field. Errors caused by charge sharing between neighboring layers are also analyzed, and it can be considered negligible by setting appropriate size of electrodes.

Polycrystalline CdTe solar cells on elastic substrates

International Nuclear Information System (INIS)

Sibinski, M.; Lisik, Z.

2007-01-01

The presented article is a report on progress in photovoltaic devices and material processing. A cadmium telluride solar cell as one of the most attractive option for thin-film polycrystalline cell constructions is presented. All typical manufacturing steps of this device, including recrystallisation and junction activation are explained. A new potential field of application for this kind of device - the BIPV (Building Integrated Photovoltaic) is named and discussed. All possible configuration options for this application, according to material properties and exploitation demands are considered. The experimental part of the presented paper is focused on practical implementation of the high - temperature polymer foil as the substrate of the newly designed device by the help of ICSVT (Isothermal Close Space Vapour Transport) technique. The evaluation of the polyester and polyamide foils according to the ICSVT/CSS manufacturing process parameters is described and discussed. A final conclusion on practical verification of these materials is also given. (authors)

Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

Energy Technology Data Exchange (ETDEWEB)

Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

2011-09-01

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

Science.gov (United States)

Ojo, A. A.; Dharmadasa, I. M.

2017-08-01

Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

Technology of uncooled fast polycrystalline PbSe focal plane arrays in systems for muzzle flash detection

Science.gov (United States)

Kastek, Mariusz; PiÄ tkowski, Tadeusz; Polakowski, Henryk; Barela, Jaroslaw; Firmanty, Krzysztof; Trzaskawka, Piotr; Vergara, German; Linares, Rodrigo; Gutierrez, Raul; Fernandez, Carlos; Montojo Supervielle, Maria Teresa

2014-05-01

The paper presents some aspects of muzzle flash detection using low resolution polycrystalline PbSe 32×32 and 80×80 detectors FPA operating at room temperature (uncooled performance). These sensors, which detect in MWIR (3 - 5 microns region) and are manufactured using proprietary technology from New Infrared Technologies (VPD PbSe - Vapor Phase Deposition of polycrystalline PbSe), can be applied to muzzle flash detection. The system based in the uncooled 80×80 FPA monolithically integrated with the CMOS readout circuitry has allowed image recording with frame rates over 2000 Hz (true snapshot acquisition), whereas the lower density, uncooled 32×32 FPA is suitable for being used in low cost infrared imagers sensitive in the MWIR band with frame rates above 1000 Hz. The FPA detector, read-out electronics and processing electronics (allows the implementation of some algorithms for muzzle flash detection) of both systems are presented. The systems have been tested at field test ground. Results of detection range measurement with two types of optical systems (wide and narrow field of view) have been shown. The theoretical analysis of possibility detection of muzzle flash and initial results of testing of some algorithms for muzzle flash detection have been presented too.

Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

Energy Technology Data Exchange (ETDEWEB)

Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

1999-09-30

ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

Directory of Open Access Journals (Sweden)

Nor A. Abdul-Manaf

2015-09-01

Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

Sensitization by UV light of α-Al{sub 2}O{sub 3}:C polycrystalline detectors

Energy Technology Data Exchange (ETDEWEB)

Meira B, L. C.; Rubio F, H.; Neres de A, E. [Centro de Desenvolvimento da Tecnologia Nuclear - CNEN, Laboratorio de Dosimetria Termoluminicente, Av. Antonio Carlos 6627, Campus UFMG, CEP 31270-901, Belo Horizonte (Brazil); Santos, A., E-mail: hrf@cdtn.br [Centro de Desenvolvimento da Tecnologia Nuclear - CNEN, Laboratorio de Microesferas Gel, Av. Antonio Carlos 6627, Campus UFMG, CEP 31270-901, Belo Horizonte (Brazil)

2014-08-15

This paper describes an increase in sensitivity to gamma and beta radiation on α-Al{sub 2}O{sub 3}:C polycrystalline detector, which has been produced by a sol-gel process, following previous exposure to ultraviolet light. The increased sensitivity of the detector as a function of the exposure time and ultraviolet wavelength was studied. Since the main luminescent centers have emission peaks at different wavelengths, selective measurements of thermoluminescent emission intensity were done, in order to investigate the possible conversion of centers as a result of the exposition to ultraviolet light. Experimental results indicate that the nature and parameters of the luminescent centers in α-Al{sub 2}O{sub 3}:C sol-gel material can be very different of those in α-Al{sub 2}O{sub 3}:C single crystal. (author)

Fast neutron activating detectors for pulsed flow measurements

International Nuclear Information System (INIS)

Dyatlov, V.D.; Kunaev, G.T.; Popytaev, A.N.; Cheremukhov, B.V.

1979-01-01

The requirements to the activation detectors of the pulsed flows of the fast neutrons are considered; the criteria of optimum measurement time, geometrical moderator sizes and radioactive detector element properties have been obtained. On their analysis parameter selection has been carried out. The neutron detector to register the short pulses has been designed and calibrated. The ways of further increase of sensitivity and efficiency of such detectors are discussed

Electrical properties of grain boundaries in polycrystalline materials under intrinsic or low doping

International Nuclear Information System (INIS)

Chowdhury, M H; Kabir, M Z

2011-01-01

An analytical model is developed to study the electrical properties (electric field and potential distributions, potential energy barrier height and polarization phenomenon) of polycrystalline materials at intrinsic or low doping for detector and solar cell applications by considering an arbitrary amount of grain boundary charge and a finite width of grain boundary region. The general grain boundary model is also applicable to highly doped polycrystalline materials. The electric field and potential distributions are obtained by solving Poisson's equation in both depleted grains and grain boundary regions. The electric field and potential distributions across the detector are analysed under various doping, trapping and applied biases. The electric field collapses, i.e. a nearly zero-average electric field region exists in some part of the biased detector at high trapped charge densities at the grain boundaries. The model explains the conditions of existence of a zero-average field region, i.e. the polarization mechanisms in polycrystalline materials. The potential energy barrier at the grain boundary exists if the electric field changes its sign at the opposite side of the grain boundary. The energy barrier does not exist in all grain boundaries in the low-doped polycrystalline detector and it never exists in intrinsic polycrystalline detectors under applied bias condition provided that there is no charge trapping in the grain.

Fast CsI-phoswich detector

International Nuclear Information System (INIS)

Langenbrunner, J.R.

1996-01-01

An improved phoswich radiation detector used pure CsI crystal and a fast plastic scintillator and a single photomultiplier tube. The plastic is arranged to receive incident radiation, and that which passed through then strikes the CsI crystal. Scintillation light from both the plastic and CsI crystal are applied to the photomultiplier tube, with the light from the plastic passing through the crystal without absorption therein. Electronics are provided for analyzing the output of the photomultiplier tube to discriminate responses due to the plastic and the CsI crystal, through short gate and long gate integration, to produce results which are indicative of the characteristics of the different types of incident radiation, even in the presence of large amounts of radiation. The phoswich detector has excellent timing resolution. The scintillators of the CsI- phoswich were chosen for their fast risetimes, of about 3 ns for NE102A, and 30 ns for the pure CsI. 5 figs

Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure; Aplicabilidade de um espectrometro portatil de CdTe e NaI (Tl) para a medida da atividade de Cesio-137 ({sup 137}Cs) e Berilio-7 ({sup 7}Be)

Energy Technology Data Exchange (ETDEWEB)

Fernandes, Jaquiel Salvi

2005-02-15

In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of {sup 241}Am, {sup 133}Ba, {sup 152}Eu, 3 sources of {sup 137}Cs and soil samples contaminated with {sup 137}Cs. It was performed a factorial planning 2{sup 3} to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 {mu}S and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the {sup 137}Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the {sup 137}Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample {sup 7}Be content the MDA found was 2867 Bq.kg{sup -1} at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the {sup 137}Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured {sup 137}Cs MDA was 71 Bq.kg{sup -1}. For the soil sample {sup 7}Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg{sup -1}. Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma

CdTe ambulatory ventricular function monitor

International Nuclear Information System (INIS)

Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

1979-01-01

A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients

The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

Energy Technology Data Exchange (ETDEWEB)

Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

2016-01-01

Graphical abstract: - Highlights: • The large-area CdTe film has been prepared by PVD under the pressure of 0.9 kPa. • The as-prepared CdTe thin film processes excellent photovoltaic properties. • This technique is suitable for depositing large-area CdTe thin film. • The 14.6% champion efficiency CdS/CdTe cell has been achieved. - Abstract: The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O{sub 2} pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm{sup 2}. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O{sub 2} flow. Through this method, the compact and uniform CdTe film (30 × 40 cm{sup 2}) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm{sup 2}) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (J{sub sc}) of the cell is 26.9 mA/cm{sup 2}, open circuit voltage (V{sub oc}) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

Characterization of CdZnTe ambient temperature detectors

International Nuclear Information System (INIS)

Lavietes, A.

1994-09-01

A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations

High luminescent L-cysteine capped CdTe quantum dots prepared at different reaction times

Science.gov (United States)

Kiprotich, Sharon; Onani, Martin O.; Dejene, Francis B.

2018-04-01

This paper reports a facile synthesis route of high luminescent L-cysteine capped CdTe quantum dots (QDs). The effect of reaction time on the growth mechanism, optical and physical properties of the CdTe QDs was investigated in order to find the suitability of them towards optical and medical applications. The representative high-resolution transmission microscopy (HRTEM) analysis showed that the as-obtained CdTe QDs appeared as spherical particles with excellent monodispersity. The images exhibited clear lattice fringes which are indicative of good crystallinity. The X-ray diffraction (XRD) pattern displayed polycrystalline nature of the QDs which correspond well to zinc blende phase of bulk CdTe. The crystallite sizes calculated from the Scherrer equation were less than 10 nm for different reaction times which were in close agreement with the values estimated from HRTEM. An increase in reaction time improved crystallinity of the sample as explained by highest peak intensity of the XRD supported by the photoluminescence emission spectra which showed high intensity at a longer growth time. It was observed that for prolonged growth time the emission bands were red shifted from about 517-557 nm for 5-180 min of reaction time due to increase in particle sizes. Ultraviolet and visible analysis displayed well-resolved absorption bands which were red shifted upon an increase in reaction time. There was an inverse relation between the band gap and reaction time. Optical band gap decreases from 3.98 to 2.59 eV with the increase in reaction time from 15 to 180 min.

Polarization phenomena in Al/p-CdTe/Pt X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Principato, F., E-mail: fabio.principato@unipa.it; Turturici, A.A.; Gallo, M.; Abbene, L.

2013-12-01

Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium and aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by Acrorad (Japan), through electrical and spectroscopic approaches. In particular, we investigated on the time degradation of the spectroscopic response of the detectors at different temperatures, voltages and energies. Current transient measurements were also performed to better understand the properties of the deep acceptor levels and their correlation with the polarization effect.

Near midplane scintillator-based fast ion loss detector on DIII-D.

Science.gov (United States)

Chen, X; Fisher, R K; Pace, D C; García-Muñoz, M; Chavez, J A; Heidbrink, W W; Van Zeeland, M A

2012-10-01

A new scintillator-based fast-ion loss detector (FILD) installed near the outer midplane of the plasma has been commissioned on DIII-D. This detector successfully measures coherent fast ion losses produced by fast-ion driven instabilities (≤500 kHz). Combined with the first FILD at ∼45° below the outer midplane [R. K. Fisher, et al., Rev. Sci. Instrum. 81, 10D307 (2010)], the two-detector system measures poloidal variation of losses. The phase space sensitivity of the new detector (gyroradius r(L) ∼ [1.5-8] cm and pitch angle α ∼ [35°-85°]) is calibrated using neutral beam first orbit loss measurements. Since fast ion losses are localized poloidally, having two FILDs at different poloidal locations allows for the study of losses over a wider range of plasma shapes and types of loss orbits.

Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL

Energy Technology Data Exchange (ETDEWEB)

Kroposki, B.; Strand, T.; Hansen, R. [National Renewable Energy Lab., Golden, CO (United States); Powell, R.; Sasala, R. [Solar Cells, Inc., Toledo, OH (United States)

1996-05-01

The Engineering and Technology Validation Team at the National Renewable Energy Laboratory (NREL) conducts in-situ technical evaluations of polycrystalline thin-film photovoltaic (PV) modules and arrays. This paper focuses on the technical evaluation of Solar Cells, Inc., (SCI) cadmium telluride (CdTe) module and array performance by attempting to correlate individual module and array performance. This is done by examining the performance and stability of the modules and array over a period of more than one year. Temperature coefficients for module and array parameters (P{sub max}, V{sub oc}, V{sub max}, I{sub sc}, I{sub max}) are also calculated.

Semi-insulating GaAs detectors of fast neutrons

International Nuclear Information System (INIS)

Sagatova, A.; Sedlackova, K.; Necas, V.; Zatko, B.; Dubecky, F.; Bohacek, P.

2012-01-01

The present work deals with the technology of HDPE neutron conversion layer application on the surface of semi-insulating (SI) GaAs detectors via developed polypropylene (PP) based glue. The influence of glue deposition on the electric properties of the detectors was studied as well as the ability of the detectors to register the fast neutrons from "2"3"9Pu-Be neutron source. (authors)

Development of a cadmium telluride pixel detector for astrophysical applications

Science.gov (United States)

Miyasaka, Hiromasa; Harrison, Fiona A.; Cook, Walter R.; Mao, Peter H.; Rana, Vikram R.; Ishikawa, Shin-Nosuke; Ushio, Masayoshi; Aono, Hiroyuki; Watanabe, Shin; Sato, Goro; Kokubun, Motohide; Takahashi, Tadayuki

2009-08-01

We are developing imaging Cadmium Telluride (CdTe) pixel detectors optimized for astrophysical hard X-ray applications. Our hybrid detector consist of a CdTe crystal 1mm thick and 2cm × 2cm in area with segmented anode contacts directly bonded to a custom low-noise application specific integrated circuit (ASIC). The CdTe sensor, fabricated by ACRORAD (Okinawa, Japan), has Schottky blocking contacts on a 605 micron pitch in a 32 × 32 array, providing low leakage current and enabling readout of the anode side. The detector is bonded using epoxy-gold stud interconnects to a custom low noise, low power ASIC circuit developed by Caltech's Space Radiation Laboratory. We have achieved very good energy resolution over a wide energy range (0.62keV FWHM @ 60keV, 10.8keV FWHM @ 662keV). We observe polarization effects at room temperature, but they are suppressed if we operate the detector at or below 0°C degree. These detectors have potential application for future missions such as the International X-ray Observatory (IXO).

A fast neutron detector with IP by track measurement

International Nuclear Information System (INIS)

Miao Zhengqiang; Yang Jun; Zhang Qiang; Zhao Xiangfeng; Wang Daohua

2004-01-01

Imaging Plate(IP) is very sensitive to electric particles, especially to heavy ions. As we know, the recoiling protons are produced while fast neutrons scattered in light material containing hydrogen. When the recoiling proton enters in the sensitive layer of IP, a track will be recorded by IP. In this paper, a fast neutron detector based on IP and (n, p) reaction is described in detail, the detector's efficiency is studied also. (authors)

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

International Nuclear Information System (INIS)

Fedorenko, Y. G.; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

2015-01-01

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

Energy Technology Data Exchange (ETDEWEB)

Fedorenko, Y. G., E-mail: y.fedorenko@liverpool.ac.uk; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K. [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF (United Kingdom)

2015-10-28

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

Design and Performance of Soft Gamma-ray Detector for NeXT Mission

Science.gov (United States)

Tajima, H.; Kamae, T.; Madejski, G.; Takahashi, T.; Nakazawa, K.; Watanabe, S.; Mitani, T.; Tanaka, T.; Fukazawa, Y.; Kataoka, J.; Ikagawa, T.; Kokubun, M.; Makishima, K.; Terada, Y.; Nomachi, M.; Tashiro, M.

The Soft Gamma-ray Detector (SGD) on board NeXT (Japanese future high energy astrophysics mission) is a Compton telescope with narrow field of view, which utilizes Compton kinematics to enhance its background rejection capabilities. It is realized as a hybrid semiconductor gamma-ray detector which consists of silicon and Cadmium Telluride (CdTe) detectors. It can detect photons in an energy band 0.05-1 MeV at a background level of 5×10-7 counts/s/cm2/keV; the silicon layers are required to improve the performance at a lower energy band (development of key technologies to realize the SGD; high quality CdTe, low noise front-end VLSI and bump bonding technology. Energy resolutions of 1.7 keV (FWHM) for CdTe pixel detectors and 1.1 keV for silicon strip detectors have been measured. We also present the validation of Monte Carlo simulation used to evaluate the performance of the SGD.

An analytical X-ray CdTe detector response matrix for incomplete charge collection correction for photon energies up to 300 keV

Science.gov (United States)

Kurková, Dana; Judas, Libor

2018-05-01

Gamma and X-ray energy spectra measured with semiconductor detectors suffer from various distortions, one of them being so-called "tailing" caused by an incomplete charge collection. Using the Hecht equation, a response matrix of size 321 × 321 was constructed which was used to correct the effect of incomplete charge collection. The correction matrix was constructed analytically for an arbitrary energy bin and the size of the energy bin thus defines the width of the spectral window. The correction matrix can be applied separately from other possible spectral corrections or it can be incorporated into an already existing response matrix of the detector. The correction was tested and its adjustable parameters were optimized on the line spectra of 57Co measured with a cadmium telluride (CdTe) detector in a spectral range from 0 up to 160 keV. The best results were obtained when the values of the free path of holes were spread over a range from 0.4 to 1.0 cm and weighted by a Gauss function. The model with the optimized parameter values was then used to correct the line spectra of 152Eu in a spectral range from 0 up to 530 keV. An improvement in the energy resolution at full width at half maximum from 2.40 % ± 0.28 % to 0.96 % ± 0.28 % was achieved at 344.27 keV. Spectra of "narrow spectrum series" beams, N120, N150, N200, N250 and N300, generated with tube voltages of 120 kV, 150 kV, 200 kV, 250 kV and 300 kV respectively, and measured with the CdTe detector, were corrected in the spectral range from 0 to 160 keV (N120 and N150) and from 0 to 530 keV (N200, N250, N300). All the measured spectra correspond both qualitatively and quantitatively to the available reference data after the correction. To obtain better correspondence between N150, N200, N250 and N300 spectra and the reference data, lower values of the free paths of holes (range from 0.16 to 0.65 cm) were used for X-ray spectra correction, which suggests energy dependence of the phenomenon.

Spent-fuel characterization with small CZT detectors

Energy Technology Data Exchange (ETDEWEB)

Berndt, R. [European Commission, Joint Research Centre, Ispra, 21020 Ispra (Vatican City State, Holy See,) (Italy)]. E-mail: Reinhard.Berndt@jrc.it; Mortreau, P. [European Commission, Joint Research Centre, Ispra, 21020 Ispra (Va) (Italy)

2006-08-01

CdTe detectors may be utilised as miniature instruments for the measurement of gamma spectra in safeguards applications [R. Arlt, V. Gryshchuk, P. Sumah, Nucl. Instr. and Meth. A 428 (1999) 127]. This is applicable for measurements both to fresh fuel and irradiated nuclear fuel. The spectrum analysis, however, is more complicated than with Ge detectors. Some reasons are: the peaks are asymmetric, the peak/Compton ratio is low, peak parameters depend on the count rate and on the properties of individual detector crystals. We developed a spectrum-unfolding code for spectra obtained with CdTe detectors. The code makes use of a series of pattern spectra of the individual instrument. It is applied to fission-product spectra and allows the coarse characterisation of the spent fuel in safeguards inspections.

Spent-fuel characterization with small CZT detectors

International Nuclear Information System (INIS)

Berndt, R.; Mortreau, P.

2006-01-01

CdTe detectors may be utilised as miniature instruments for the measurement of gamma spectra in safeguards applications [R. Arlt, V. Gryshchuk, P. Sumah, Nucl. Instr. and Meth. A 428 (1999) 127]. This is applicable for measurements both to fresh fuel and irradiated nuclear fuel. The spectrum analysis, however, is more complicated than with Ge detectors. Some reasons are: the peaks are asymmetric, the peak/Compton ratio is low, peak parameters depend on the count rate and on the properties of individual detector crystals. We developed a spectrum-unfolding code for spectra obtained with CdTe detectors. The code makes use of a series of pattern spectra of the individual instrument. It is applied to fission-product spectra and allows the coarse characterisation of the spent fuel in safeguards inspections

Fast neutron spectra determination by threshold activation detectors using neural networks

International Nuclear Information System (INIS)

Kardan, M.R.; Koohi-Fayegh, R.; Setayeshi, S.; Ghiassi-Nejad, M.

2004-01-01

Neural network method was used for fast neutron spectra unfolding in spectrometry by threshold activation detectors. The input layer of the neural networks consisted of 11 neurons for the specific activities of neutron-induced nuclear reaction products, while the output layers were fast neutron spectra which had been subdivided into 6, 8, 10, 12, 15 and 20 energy bins. Neural network training was performed by 437 fast neutron spectra and corresponding threshold activation detector readings. The trained neural network have been applied for unfolding 50 spectra, which were not in training sets and the results were compared with real spectra and unfolded spectra by SANDII. The best results belong to 10 energy bin spectra. The neural network was also trained by detector readings with 5% uncertainty and the response of the trained neural network to detector readings with 5%, 10%, 15%, 20%, 25% and 50% uncertainty was compared with real spectra. Neural network algorithm, in comparison with other unfolding methods, is very fast and needless to detector response matrix and any prior information about spectra and also the outputs have low sensitivity to uncertainty in the activity measurements. The results show that the neural network algorithm is useful when a fast response is required with reasonable accuracy

Fast method for geometric calibration of detectors and matching testing between two detectors

International Nuclear Information System (INIS)

Pechenova, O.Yu.

2002-01-01

A fast method of geometric calibration of detectors has been proposed. The main idea of this method is to determine offsets by fitting the real data distribution by analytic functions which describe the motion of one detector relative to the other one. This method can be applicable to offsets determination for one detector relative to the other detector or for one part of the detector relative to its other part. The detectors should be placed perpendicular to the beam axis. The form of analytic functions depends on the geometry of the experiment and direction of the coordinate axes. The analytic functions have been obtained using the rotation matrices. This method can be applied to the matching testing between two detectors

Formation of self assembled PbTe quantum dots in CdTe on Si(111)

Science.gov (United States)

Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

2010-01-01

We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

Fast uncooled module 32×32 array of polycrystalline PbSe used for muzzle flash detection

Science.gov (United States)

Kastek, Mariusz; Dulski, Rafał; Trzaskawka, Piotr; Bieszczad, Grzegorz

2011-06-01

The paper presents some aspects of muzzle flash detection using low resolution polycrystalline PbSe uncooled 32×32 detectors array. This system for muzzle flash detection works in MWIR (3 - 5 microns) region and it is based on VPD (Vapor Phase Deposition) technology. The low density uncooled 32×32 array is suitable for being used in low cost IR imagers sensitive in the MWIR band with frame rates exceeding 1.000 Hz. The FPA detector, read-out electronics and processing electronics (allowing the implementation of some algorithms for muzzle flash detection) has been presented. The system has been tested at field test ground. Results of detection range measurement with two types of optical systems (wide and narrow field of view) have been shown. The initial results of testing of some algorithms for muzzle flash detection have been also presented.

Study of CdTe and HgCdTe thin films obtained by electrochemical methods

International Nuclear Information System (INIS)

Guillen, C.

1990-01-01

Cadmium telluride polycrystalline thin films were fabricated on SnO 2 -coated glass substrates by potentiostatic electrodeposition and characterized by X-ray diffraction, energy dispersive X-ray analyses (EDAX), optical and electrical measurements. The films dseposited at potentials more positive than -0.65 V vs.SCE were p-type but those deposited at more negative potentials were n-type. All CdTe thin films showed a band-gap energy about 1.45 eV and a large absorption coeffici-ent (a=10 5 cm -1 ) above de band edge. The addition of even small amounts of mercury to the CdTe produces higuer conductivity values and lower band-gap energies. We have prepared HgCdTe thin films where the band-gap energies ranged between 0.93 and 0.88 eV depending on the ratio of mercury to cadmium. Heat treatment at 300 0 C increases the crystalline diameter and alter the composition of the electrodeposited films, a decrease of the resistivity values was also observed. (Author)

CdTe and Cd1-xZnxTe for nuclear detectors: facts and fictions

International Nuclear Information System (INIS)

Fougeres, P.; Siffert, P.; Hageali, M.; Koebel, J.M.; Regal, R.

1999-01-01

Both CdTe and Cd 1-x Zn x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and γ-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best

Self-Catalyzed CdTe Wires

Directory of Open Access Journals (Sweden)

Tom Baines

2018-04-01

Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

CdTe layer structures for X-ray and gamma-ray detection directly grown on the Medipix readout-chip by MBE

Science.gov (United States)

Vogt, A.; Schütt, S.; Frei, K.; Fiederle, M.

2017-11-01

This work investigates the potential of CdTe semiconducting layers used for radiation detection directly deposited on the Medipix readout-chip by MBE. Due to the high Z-number of CdTe and the low electron-hole pair creation energy a thin layer suffices for satisfying photon absorption. The deposition takes place in a modified MBE system enabling growth rates up to 10 μm/h while the UHV conditions allow the required high purity for detector applications. CdTe sensor layers deposited on silicon substrates show resistivities up to 5.8 × 108 Ω cm and a preferred (1 1 1) orientation. However, the resistivity increases with higher growth temperature and the orientation gets more random. Additionally, the deposition of a back contact layer sequence in one process simplifies the complex production of an efficient contact on CdTe with aligned work functions. UPS measurements verify a decrease of the work function of 0.62 eV induced by Te doping of the CdTe.

A low-cost non-toxic post-growth activation step for CdTe solar cells

Science.gov (United States)

Major, J. D.; Treharne, R. E.; Phillips, L. J.; Durose, K.

2014-07-01

Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface and to passivate the grain boundaries, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 1014 cm-3) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

FastSim: A Fast Simulation for the SuperB Detector

International Nuclear Information System (INIS)

Andreassen, R; Sokoloff, M; Arnaud, N; Burmistrov, L; Brown, D N; Carlson, J; Gaponenko, I; Suzuki, A; Cheng, C-h; Simone, A Di; Manoni, E; Perez, A; Walsh, J; Rama, M; Roberts, D; Rotondo, M; Simi, G

2011-01-01

We have developed a parameterized (fast) simulation for detector optimization and physics reach studies of the proposed SuperB Flavor Factory in Italy. Detector components are modeled as thin sections of planes, cylinders, disks or cones. Particle-material interactions are modeled using simplified cross-sections and formulas. Active detectors are modeled using parameterized response functions. Geometry and response parameters are configured using xml files with a custom-designed schema. Reconstruction algorithms adapted from BaBar are used to build tracks and clusters. Multiple sources of background signals can be merged with primary signals. Pattern recognition errors are modeled statistically by randomly misassigning nearby tracking hits. Standard BaBar analysis tuples are used as an event output. Hadronic B meson pair events can be simulated at roughly 10Hz.

FastSim: A Fast Simulation for the SuperB Detector

Science.gov (United States)

Andreassen, R.; Arnaud, N.; Brown, D. N.; Burmistrov, L.; Carlson, J.; Cheng, C.-h.; Di Simone, A.; Gaponenko, I.; Manoni, E.; Perez, A.; Rama, M.; Roberts, D.; Rotondo, M.; Simi, G.; Sokoloff, M.; Suzuki, A.; Walsh, J.

2011-12-01

We have developed a parameterized (fast) simulation for detector optimization and physics reach studies of the proposed SuperB Flavor Factory in Italy. Detector components are modeled as thin sections of planes, cylinders, disks or cones. Particle-material interactions are modeled using simplified cross-sections and formulas. Active detectors are modeled using parameterized response functions. Geometry and response parameters are configured using xml files with a custom-designed schema. Reconstruction algorithms adapted from BaBar are used to build tracks and clusters. Multiple sources of background signals can be merged with primary signals. Pattern recognition errors are modeled statistically by randomly misassigning nearby tracking hits. Standard BaBar analysis tuples are used as an event output. Hadronic B meson pair events can be simulated at roughly 10Hz.

Evaluation of the quality of semi-insulating CdTe for radiation detectors by measurement of lux-ampere characteristics

International Nuclear Information System (INIS)

Franc, J.; Kubat, J.; Grill, R.; Dedic, V.; Hlidek, P.; Moravec, P.; Belas, E.

2011-01-01

Accumulation of space charge on deep levels represents one of the major problems in fabrication of semi-insulating CdTe and CdZnTe X-ray and gamma-ray detectors, because it influences the applied electric field and can even result in a complete breakdown of the field in part of the sample (polarization and dead layer formation). The goal of the study was to evaluate possibilities of localization of areas of potential space charge accumulation in as grown crystals by steady state measurement of lux-ampere characteristics. All measurements were done at room temperature using He-Ne laser. Voltage was applied parallel to the direction of light propagation in the range 10-100 V. It was observed that all lux-ampere characteristics are sub-linear. Screening effects caused by space charge accumulated on deep levels explain these results. Crystals prepared by Vertical gradient freeze method in our laboratory are compared to a commercially available detector-grade sample prepared by Travelling heater method. Comparison of crystals grown from precursors of different starting purity shows an increase of the slope of lux-ampere characteristics with a decrease of impurity content. A correlation between the slope of lux-ampere characteristics and the mobility-lifetime product of electrons was observed, too.

Evaluation of the quality of semi-insulating CdTe for radiation detectors by measurement of lux-ampere characteristics

Science.gov (United States)

Franc, J.; Kubát, J.; Grill, R.; Dědič, V.; Hlídek, P.; Moravec, P.; Belas, E.

2011-05-01

Accumulation of space charge on deep levels represents one of the major problems in fabrication of semi-insulating CdTe and CdZnTe X-ray and gamma-ray detectors, because it influences the applied electric field and can even result in a complete breakdown of the field in part of the sample (polarization and dead layer formation). The goal of the study was to evaluate possibilities of localization of areas of potential space charge accumulation in as grown crystals by steady state measurement of lux-ampere characteristics. All measurements were done at room temperature using He-Ne laser. Voltage was applied parallel to the direction of light propagation in the range 10-100 V. It was observed that all lux-ampere characteristics are sub-linear. Screening effects caused by space charge accumulated on deep levels explain these results. Crystals prepared by Vertical gradient freeze method in our laboratory are compared to a commercially available detector-grade sample prepared by Travelling heater method. Comparison of crystals grown from precursors of different starting purity shows an increase of the slope of lux-ampere characteristics with a decrease of impurity content. A correlation between the slope of lux-ampere characteristics and the mobility-lifetime product of electrons was observed, too.

Design of a hybrid gas proportional counter with CdTe guard counters for sup 1 sup 4 C dating system

CERN Document Server

Zhang, L; Hinamoto, N; Nakazawa, M; Yoshida, K

2002-01-01

Nowadays uniform, low-cost and large-size compound semiconductor detectors are available up to several square centimeters. We are trying to combine this technology with conventional gas detectors to upgrade an anticoincidence type proportional counter, Oeschger-type thin wall counter of 2.2 l, used for a sup 1 sup 4 C dating facility at the University of Tokyo. In order to increase the ratio of the signal to the background for smaller quantity of samples less than 1 g, an effective approach is to minimize the detector volume at higher gas pressure. However, the anticoincidence function suffers from such a small volume. Therefore we designed a new active wall gas counter of 0.13 l counting volume using CdTe compound semiconductor detectors as the wall of the gas proportional counter to perform anticoincidence. Simulation study showed that at noise thresholds less than 70 keV, the wall counters can reject above 99.8% of events arising from outer gamma rays. Measured noise levels of CdTe detectors were smaller t...

The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

International Nuclear Information System (INIS)

Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

2008-01-01

The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

Conceptual design of the ITER fast-ion loss detector

International Nuclear Information System (INIS)

Garcia-Munoz, M.; Ayllon-Guerola, J.; Galdon, J.; Garcia Lopez, J.; Gonzalez-Martin, J.; Jimenez-Ramos, M. C.; Rodriguez-Ramos, M.; Rivero-Rodriguez, J. F.; Sanchis-Sanchez, L.; Kocan, M.; Bertalot, L.; Bonnet, Y.; Casal, N.; Giacomin, T.; Pinches, S. D.; Reichle, R.; Vayakis, G.; Veshchev, E.; Vorpahl, Ch.; Walsh, M.

2016-01-01

A conceptual design of a reciprocating fast-ion loss detector for ITER has been developed and is presented here. Fast-ion orbit simulations in a 3D magnetic equilibrium and up-to-date first wall have been carried out to revise the measurement requirements for the lost alpha monitor in ITER. In agreement with recent observations, the simulations presented here suggest that a pitch-angle resolution of ∼5° might be necessary to identify the loss mechanisms. Synthetic measurements including realistic lost alpha-particle as well as neutron and gamma fluxes predict scintillator signal-to-noise levels measurable with standard light acquisition systems with the detector aperture at ∼11 cm outside of the diagnostic first wall. At measurement position, heat load on detector head is comparable to that in present devices.

Conceptual design of the ITER fast-ion loss detector

Energy Technology Data Exchange (ETDEWEB)

Garcia-Munoz, M., E-mail: mgm@us.es; Ayllon-Guerola, J.; Galdon, J.; Garcia Lopez, J.; Gonzalez-Martin, J.; Jimenez-Ramos, M. C.; Rodriguez-Ramos, M.; Rivero-Rodriguez, J. F.; Sanchis-Sanchez, L. [Department of Atomic, Molecular and Nuclear Physics, University of Seville, 41012 Seville (Spain); CNA (Universidad de Sevilla-CSIC-J. Andalucía), Seville (Spain); Kocan, M.; Bertalot, L.; Bonnet, Y.; Casal, N.; Giacomin, T.; Pinches, S. D.; Reichle, R.; Vayakis, G.; Veshchev, E.; Vorpahl, Ch.; Walsh, M. [ITER Organization, Route de Vinon-sur-Verdon, CS 90 046, 13067 Saint Paul-lez-Durance Cedex (France); and others

2016-11-15

A conceptual design of a reciprocating fast-ion loss detector for ITER has been developed and is presented here. Fast-ion orbit simulations in a 3D magnetic equilibrium and up-to-date first wall have been carried out to revise the measurement requirements for the lost alpha monitor in ITER. In agreement with recent observations, the simulations presented here suggest that a pitch-angle resolution of ∼5° might be necessary to identify the loss mechanisms. Synthetic measurements including realistic lost alpha-particle as well as neutron and gamma fluxes predict scintillator signal-to-noise levels measurable with standard light acquisition systems with the detector aperture at ∼11 cm outside of the diagnostic first wall. At measurement position, heat load on detector head is comparable to that in present devices.

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography

International Nuclear Information System (INIS)

Ricq, St.

1999-01-01

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

Sensors for ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

2014-11-21

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

Sensors for ultra-fast silicon detectors

International Nuclear Information System (INIS)

Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

2014-01-01

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

Detectors - Electronics

International Nuclear Information System (INIS)

Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J.

1998-01-01

The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X → e - converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the 3 He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

The investigation of fast neutron Threshold Activation Detectors (TAD)

International Nuclear Information System (INIS)

Gozani, T; King, M J; Stevenson, J

2012-01-01

The detection of fast neutrons is usually done by liquid hydrogenous organic scintillators, where the separation between the ever present gamma rays and neutrons is achieved by the pulse shape discrimination (PSD). In many practical situation the detection of fast neutrons has to be carried out while the intense source (be it neutrons, gamma rays or x-rays) that creates these neutrons, for example by the fission process, is present. This source, or ''flash'', usually blinds the neutron detectors and temporarily incapacitates them. By the time the detectors recover the prompt neutron signature does not exist. Thus to overcome the blinding background, one needs to search for processes whereby the desired signature, such as fission neutrons could in some way be measured long after the fission occurred and when the neutron detector is fully recovered from the overload. A new approach was proposed and demonstrated a good sensitivity for the detection of fast neutrons in adverse overload situations where normally it could not be done. A temporal separation of the fission event from the prompt neutrons detection is achieved via the activation process. The main idea, called Threshold Activation Detection (or detector)-TAD, is to find appropriate substances that can be selectively activated by the fission neutrons and not by the source radiation, and then measure the radioactively decaying activation products (typically beta and γ-rays) well after the source pulse has ended. The activation material should possess certain properties: a suitable half-life; an energy threshold below which the numerous source neutrons will not activate it (e.g. about 3 MeV); easily detectable activation products and has a usable cross section for the selected reaction. Ideally the substance would be part of the scintillator. There are several good candidates for TAD. The first one we have selected is based on fluorine. One of the major advantages of this element is the fact that it is a major

The investigation of fast neutron Threshold Activation Detectors (TAD)

Science.gov (United States)

Gozani, T.; King, M. J.; Stevenson, J.

2012-02-01

The detection of fast neutrons is usually done by liquid hydrogenous organic scintillators, where the separation between the ever present gamma rays and neutrons is achieved by the pulse shape discrimination (PSD). In many practical situation the detection of fast neutrons has to be carried out while the intense source (be it neutrons, gamma rays or x-rays) that creates these neutrons, for example by the fission process, is present. This source, or ``flash'', usually blinds the neutron detectors and temporarily incapacitates them. By the time the detectors recover the prompt neutron signature does not exist. Thus to overcome the blinding background, one needs to search for processes whereby the desired signature, such as fission neutrons could in some way be measured long after the fission occurred and when the neutron detector is fully recovered from the overload. A new approach was proposed and demonstrated a good sensitivity for the detection of fast neutrons in adverse overload situations where normally it could not be done. A temporal separation of the fission event from the prompt neutrons detection is achieved via the activation process. The main idea, called Threshold Activation Detection (or detector)-TAD, is to find appropriate substances that can be selectively activated by the fission neutrons and not by the source radiation, and then measure the radioactively decaying activation products (typically beta and γ-rays) well after the source pulse has ended. The activation material should possess certain properties: a suitable half-life; an energy threshold below which the numerous source neutrons will not activate it (e.g. about 3 MeV); easily detectable activation products and has a usable cross section for the selected reaction. Ideally the substance would be part of the scintillator. There are several good candidates for TAD. The first one we have selected is based on fluorine. One of the major advantages of this element is the fact that it is a major

Photon Counting Energy Dispersive Detector Arrays for X-ray Imaging.

Science.gov (United States)

Iwanczyk, Jan S; Nygård, Einar; Meirav, Oded; Arenson, Jerry; Barber, William C; Hartsough, Neal E; Malakhov, Nail; Wessel, Jan C

2009-01-01

The development of an innovative detector technology for photon-counting in X-ray imaging is reported. This new generation of detectors, based on pixellated cadmium telluride (CdTe) and cadmium zinc telluride (CZT) detector arrays electrically connected to application specific integrated circuits (ASICs) for readout, will produce fast and highly efficient photon-counting and energy-dispersive X-ray imaging. There are a number of applications that can greatly benefit from these novel imagers including mammography, planar radiography, and computed tomography (CT). Systems based on this new detector technology can provide compositional analysis of tissue through spectroscopic X-ray imaging, significantly improve overall image quality, and may significantly reduce X-ray dose to the patient. A very high X-ray flux is utilized in many of these applications. For example, CT scanners can produce ~100 Mphotons/mm(2)/s in the unattenuated beam. High flux is required in order to collect sufficient photon statistics in the measurement of the transmitted flux (attenuated beam) during the very short time frame of a CT scan. This high count rate combined with a need for high detection efficiency requires the development of detector structures that can provide a response signal much faster than the transit time of carriers over the whole detector thickness. We have developed CdTe and CZT detector array structures which are 3 mm thick with 16×16 pixels and a 1 mm pixel pitch. These structures, in the two different implementations presented here, utilize either a small pixel effect or a drift phenomenon. An energy resolution of 4.75% at 122 keV has been obtained with a 30 ns peaking time using discrete electronics and a (57)Co source. An output rate of 6×10(6) counts per second per individual pixel has been obtained with our ASIC readout electronics and a clinical CT X-ray tube. Additionally, the first clinical CT images, taken with several of our prototype photon-counting and

Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

Science.gov (United States)

Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

2017-08-01

In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Fast rise time IR detectors for lepton colliders

International Nuclear Information System (INIS)

Drago, A.; Bini, S.; Guidi, M. Cestelli; Marcelli, A.; Pace, E.

2016-01-01

Diagnostics is a fundamental issue for accelerators whose demands are continuously increasing. In particular bunch-by-bunch diagnostics is a key challenge for the latest generation of lepton colliders and storage rings. The Frascati Φ-factory, DAΦNE, colliding at 1.02 GeV in the centre of mass, hosts in the main rings few synchrotron radiation beamlines and two of them collect the synchrotron radiation infrared emission: SINBAD from the electron ring and 3+L from the positron ring. At DAΦNE each bucket is 2.7 ns long and particles are gathered in bunches emitting pulsed IR radiation, whose intensity in the long wavelength regime is directly proportional to the accumulated particles. Compact uncooled photoconductive HgCdTe detectors have been tested in both beamlines using dedicated optical layouts. Actually, the fast rise time of HgCdTe semiconductors give us the chance to test bunch-by-bunch devices for both longitudinal and transverse diagnostics. For the longitudinal case, single pixel detectors have been used, while for the transverse diagnostics, multi-pixel array detectors, with special custom design, are under test. This contribution will briefly describe the status of the research on fast IR detectors at DAΦNE, the results obtained and possible foreseen developments.

New imaging spectrometer CdTe very high spatial and spectral resolution for X and gamma astronomy

International Nuclear Information System (INIS)

Dubos, Sebastien

2015-01-01

The thesis work presented in this manuscript corresponds to the first development phase of the MC2 project, an ambitious R and D effort to realize a new type of cadmium telluride (CdTe) -based imaging spectrometer for future hard X- and gamma-rays astronomy missions. The final goal is to achieve a 300 micron-pitch pixelated detector plane hybridized with a very low noise front-end electronics for a total pixel density multiplied by 4 compared to the most advanced System recently available in the laboratory, the Caliste HD imaging spectrometer. Moreover, thanks to the joint development of readout circuits adapted to the interconnection of pixelated detectors with low capacitance and low leakage current, spectroscopic performances of such system are assumed to approach inherent limitations of the CdTe detector, especially for the lowest energies. The work was organized in parallel and complementary areas: evaluation of current Systems, feedback and identification of issues associated with the development of highly-resolved detection planes, implementation and complete characterization of a new two-dimensional ASIC specifically developed for this application, and modeling and study of the associated sensor to optimize the design of the detector pattern. Finally, a first hybrid prototype was completed and first experimental tests thereby conducted. (author) [fr

Evaluation the image obtained from X-ray flat-panel detectors utilizing a polycrystalline CdZnTe film as the conversion layer

International Nuclear Information System (INIS)

Tokuda, S.; Kishihara, H.; Kaino, M.; Sato, T.

2006-01-01

We can expect that fluoroscopic images with a high sensitivity and excellent detective efficiency can be obtained by using a semiconductor with a small W factor for the conversion layer of X-ray flat-panel detectors, which have experienced a rapid gain inpopularity for medical and non-destructive industrial inspection uses in recent years. We believe that polycrystalline CdZnTe film formed by the closed spaced sublimation (CSS) method is a promising conversion material for next-generation high efficiency X-ray flat-panel detectors, and have previously reported the results of feasibility studies. In this paper, we present an overview of X-ray flat-panel detectors and the features of CdZnTe film, then we describe the CSS method of deposition and evaluation of the physical characteristics of CdZnTe film, and finally we present the results of our fabrication and testing of proto-type detectors utilizing CdZnTe film. (author)

Surface passivation for CdTe devices

Energy Technology Data Exchange (ETDEWEB)

Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

2017-08-01

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Fast neutron dosimetry by means of different solid state nuclear track detectors

International Nuclear Information System (INIS)

Spurny, F.; Turek, K.

1977-01-01

The comparative study of three different types of fast neutron dosimeters based on solid state nuclear track detectors is presented; the dosimeters studied were: - microscopic soda glass in contact with 232 Th; - polycarbonate Makrofol E; and - cellulose nitrate Kodak LR 115. All detectors were evaluated by visual counting in a microscope. The authors have studied such properties as the background, angular as well as energetical dependences of detectors. The results obtained show that all studied detectors are suitable for fast neutron dosimetry; their application depends however on the concrete experimental conditions (neutron spectrum, fluence etc.). Both advantages and disadvantages of each of them are presented. (Auth.)

How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

Energy Technology Data Exchange (ETDEWEB)

Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

2016-10-25

It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

Fast neutron damage in germanium detectors

International Nuclear Information System (INIS)

Kraner, H.W.

1979-10-01

The effects of fast neutron radiation damage on the performance of both Ge(Li) and Ge(HP) detectors have been studied during the past decade and will be summarized. A review of the interaction processes leading to the defect structures causing trapping will be made. The neutron energy dependence of observable damage effects will be considered in terms of interaction and defect production cross sections

Self powered neutron detectors as in-core detectors for Sodium-cooled Fast Reactors

Science.gov (United States)

Verma, V.; Barbot, L.; Filliatre, P.; Hellesen, C.; Jammes, C.; Svärd, S. Jacobsson

2017-07-01

Neutron flux monitoring system forms an integral part of the design of a Generation IV sodium cooled fast reactor. Diverse possibilities of detector system installation must be studied for various locations in the reactor vessel in order to detect any perturbations in the core. Results from a previous paper indicated that it is possible to detect changes in neutron source distribution initiated by an inadvertent withdrawal of outer control rod with in-vessel fission chambers located azimuthally around the core. It is, however, not possible to follow inner control rod withdrawal and precisely know the location of the perturbation in the core. Hence the use of complimentary in-core detectors coupled with the peripheral fission chambers is proposed to enable robust core monitoring across the radial direction. In this paper, we assess the feasibility of using self-powered neutron detectors (SPNDs) as in-core detectors in fast reactors for detecting local changes in the power distribution when the reactor is operated at nominal power. We study the neutron and gamma contributions to the total output current of the detector modelled with Platinum as the emitter material. It is shown that this SPND placed in an SFR-like environment would give a sufficiently measurable prompt neutron induced current of the order of 600 nA/m. The corresponding induced current in the connecting cable is two orders of magnitude lower and can be neglected. This means that the SPND can follow in-core power fluctuations. This validates the operability of an SPND in an SFR-like environment.

Applications of CdTe to nuclear medicine. Annual report, February 1, 1979-January 31, 1980

International Nuclear Information System (INIS)

Entine, G.

1980-01-01

The application of CdTe gamma detectors in nuclear medicine is reported on. An internal probe was developed which can be inserted into the heart to measure the efficiency of various radiopharmaceuticals in the treatment of heart attacks. A second application is an array of detectors which is light enough to be worn by ambulatory patients and can measure the change in cardiac output over an eight hour period during heart attack treatment. The instrument includes an on board tape recorder

Progress on uncooled PbSe detectors for low-cost applications

Science.gov (United States)

Vergara, German; Gomez, Luis J.; Villamayor, Victor; Alvarez, M.; Rodrigo, Maria T.; del Carmen Torquemada, Maria; Sanchez, Fernando J.; Verdu, Marina; Diezhandino, Jorge; Rodriguez, Purificacion; Catalan, Irene; Almazan, Rosa; Plaza, Julio; Montojo, Maria T.

2004-08-01

This work reports on progress on development of polycrystalline PbSe infrared detectors at the Centro de Investigacion y Desarrollo de la Armada (CIDA). Since mid nineties, the CIDA owns an innovative technology for processing uncooled MWIR detectors of polycrystalline PbSe. Based on this technology, some applications have been developed. However, future applications demand smarter, more complex, faster yet cheaper detectors. Aiming to open new perspectives to polycrystalline PbSe detectors, we are currently working on different directions: 1) Processing of 2D arrays: a) Designing and processing low density x-y addressed arrays with 16x16 and 32x32 elements, as an extension of our standard technology. b) Trying to make compatible standard CMOS and polycrystalline PbSe technologies in order to process monolithic large format arrays. 2) Adding new features to the detector such as monolithically integrated spectral discrimination.

Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

Science.gov (United States)

Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

2012-03-01

High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

Self powered neutron detectors as in-core detectors for Sodium-cooled Fast Reactors

Energy Technology Data Exchange (ETDEWEB)

Verma, V., E-mail: vasudha.verma@physics.uu.se [Division of Applied Nuclear Physics, Uppsala University, Box 516, SE-75120 Uppsala (Sweden); CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St-Paul-lez-Durance (France); Barbot, L.; Filliatre, P. [CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St-Paul-lez-Durance (France); Hellesen, C. [Division of Applied Nuclear Physics, Uppsala University, Box 516, SE-75120 Uppsala (Sweden); Jammes, C. [CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St-Paul-lez-Durance (France); Svärd, S. Jacobsson [Division of Applied Nuclear Physics, Uppsala University, Box 516, SE-75120 Uppsala (Sweden)

2017-07-11

Neutron flux monitoring system forms an integral part of the design of a Generation IV sodium cooled fast reactor. Diverse possibilities of detector system installation must be studied for various locations in the reactor vessel in order to detect any perturbations in the core. Results from a previous paper indicated that it is possible to detect changes in neutron source distribution initiated by an inadvertent withdrawal of outer control rod with in-vessel fission chambers located azimuthally around the core. It is, however, not possible to follow inner control rod withdrawal and precisely know the location of the perturbation in the core. Hence the use of complimentary in-core detectors coupled with the peripheral fission chambers is proposed to enable robust core monitoring across the radial direction. In this paper, we assess the feasibility of using self-powered neutron detectors (SPNDs) as in-core detectors in fast reactors for detecting local changes in the power distribution when the reactor is operated at nominal power. We study the neutron and gamma contributions to the total output current of the detector modelled with Platinum as the emitter material. It is shown that this SPND placed in an SFR-like environment would give a sufficiently measurable prompt neutron induced current of the order of 600 nA/m. The corresponding induced current in the connecting cable is two orders of magnitude lower and can be neglected. This means that the SPND can follow in-core power fluctuations. This validates the operability of an SPND in an SFR-like environment. - Highlights: • Studied possibility of using SPNDs as in-core detectors in SFRs. • Study done to detect local power profile changes when reactor is at nominal power. • SPND with a Pt-emitter gives measurable prompt current of the order of 600 nA/m. • Dominant proportion of prompt response is maintained throughout the operation. • Detector signal gives dynamic information on the power fluctuations.

R&D on a new type of micropattern gaseous detector: The Fast Timing Micropattern detector

Energy Technology Data Exchange (ETDEWEB)

Abbaneo, D.; Abbas, M. [CERN, Geneva (Switzerland); Abbrescia, M. [INFN Bari and University of Bari, Bari (Italy); Akl, M. Abi [Texas A& M University at Qatar, Doha (Qatar); Aboamer, O. [Academy of Scientific Research and Technology, Egyptian Network of High Energy Physics, ASRT-ENHEP, Cairo (Egypt); Acosta, D. [University of Florida, Gainesville (United States); Ahmad, A. [National Center for Physics, Quaid-i-Azam University Campus, Islamabad (Pakistan); Ahmed, W. [INFN Bari and University of Bari, Bari (Italy); Aleksandrov, A. [Institute for Nuclear Research and Nuclear Energy, Sofia (Bulgaria); Altieri, P. [INFN Bari and University of Bari, Bari (Italy); Asawatangtrakuldee, C. [Peking University, Beijing (China); Aspell, P. [CERN, Geneva (Switzerland); Assran, Y. [Academy of Scientific Research and Technology, Egyptian Network of High Energy Physics, ASRT-ENHEP, Cairo (Egypt); Awan, I. [National Center for Physics, Quaid-i-Azam University Campus, Islamabad (Pakistan); Bally, S. [CERN, Geneva (Switzerland); Ban, Y. [Peking University, Beijing (China); Banerjee, S. [Saha Institute of Nuclear Physics, Kolkata (India); Barashko, V. [University of Florida, Gainesville (United States); Barria, P. [Universite Libre de Bruxelles, Brussels (Belgium); Bencze, G. [Institute for Particle and Nuclear Physics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Budapest (Hungary); and others

2017-02-11

This contribution introduces a new type of Micropattern Gaseous Detector, the Fast Timing Micropattern (FTM) detector, utilizing fully Resistive WELL structures. The structure of the prototype will be described in detail and the results of the characterization study performed with an X-ray gun will be presented, together with the first results on time resolution based on data collected with muon/pion test beams.

High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

2018-05-08

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Compound polycrystalline solar cells. Recent progress and Y2K perspective

Energy Technology Data Exchange (ETDEWEB)

Birkmire, R.W. [Institute of Energy Conversion, University of Delaware, DE 19716 Newark (United States)

2001-01-01

A historical perspective on the development of polycrystalline thin-film solar cells based on CdTe and CuInSe{sub 2} is presented, and recent progress of these thin-film technologies is discussed. Impressive improvements in the efficiency of laboratory scale devices has not been easy to translate to the manufacturing environment, principally due to our lack of understanding of the basic science and engineering of these materials and devices. 'Next-generation' high-performance thin-film solar cells utilizing multijunction device configurations should achieve efficiencies of more than 25% within ten years. However, our cost-effective manufacturing of these more complex devices will be problematic unless the science and engineering issues associated with processing of thin-film PV devices are addressed.

Fluorescence-tagged metallothionein with CdTe quantum dots analyzed by the chip-CE technique

Energy Technology Data Exchange (ETDEWEB)

Guszpit, Ewelina, E-mail: ewelina.guszpit@gmail.com [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Krizkova, Sona [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic); Kepinska, Marta [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Rodrigo, Miguel Angel Merlos [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic); Milnerowicz, Halina [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Kopel, Pavel; Kizek, Rene [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic)

2015-11-15

Quantum dots (QDs) are fluorescence nanoparticles (NPs) with unique optic properties which allow their use as probes in chemical, biological, immunological, and molecular imaging. QDs linked with target ligands such as peptides or small molecules can be used as tumor biomarkers. These particles are a promising tool for selective, fast, and sensitive tagging and imaging in medicine. In this study, an attempt was made to use QDs as a marker for human metallothionein (MT) isoforms 1 and 2. Four kinds of CdTe QDs of different sizes bioconjugated with MT were analyzed using the chip-CE technique. Based on the results, it can be concluded that MT is willing to interact with QDs, and the chip-CE technique enables the observation of their complexes. It was also observed that changes ranging roughly 6–7 kDa, a value corresponding to the MT monomer, depend on the hydrodynamic diameters of QDs; also, the MT sample without cadmium interacted stronger with QDs than MT saturated with cadmium. Results show that MT is willing to interact with smaller QDs (blue CdTe) rather than larger ones QDs (red CdTe). To our knowledge, chip-CE has not previously been applied in the study of CdTe QDs interaction with MT.Graphical Abstract.

Fluorescence-tagged metallothionein with CdTe quantum dots analyzed by the chip-CE technique

International Nuclear Information System (INIS)

Guszpit, Ewelina; Krizkova, Sona; Kepinska, Marta; Rodrigo, Miguel Angel Merlos; Milnerowicz, Halina; Kopel, Pavel; Kizek, Rene

2015-01-01

Quantum dots (QDs) are fluorescence nanoparticles (NPs) with unique optic properties which allow their use as probes in chemical, biological, immunological, and molecular imaging. QDs linked with target ligands such as peptides or small molecules can be used as tumor biomarkers. These particles are a promising tool for selective, fast, and sensitive tagging and imaging in medicine. In this study, an attempt was made to use QDs as a marker for human metallothionein (MT) isoforms 1 and 2. Four kinds of CdTe QDs of different sizes bioconjugated with MT were analyzed using the chip-CE technique. Based on the results, it can be concluded that MT is willing to interact with QDs, and the chip-CE technique enables the observation of their complexes. It was also observed that changes ranging roughly 6–7 kDa, a value corresponding to the MT monomer, depend on the hydrodynamic diameters of QDs; also, the MT sample without cadmium interacted stronger with QDs than MT saturated with cadmium. Results show that MT is willing to interact with smaller QDs (blue CdTe) rather than larger ones QDs (red CdTe). To our knowledge, chip-CE has not previously been applied in the study of CdTe QDs interaction with MT.Graphical Abstract

Development of a CZT drift ring detector for X and γ ray spectroscopy

Science.gov (United States)

Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Boothman, V.; Veeramani, P.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

2015-04-01

CdTe and CZT detectors are considered better choices for high energy γ and X-ray spectroscopy in comparison to Si and HPGe detectors due to their good quantum efficiency and room temperature operation. The performance limitations in CdTe and CZT detectors are mainly associated with poor hole transport and trapping phenomena. Among many techniques that can be used to eliminate the effect of the poor charge transport properties of holes in CdTe and CZT material, the drift ring technique shows promising results. In this work, the performance of a 2.3 mm thick CZT drift ring detector is investigated. Spatially resolved measurements were carried out with an X-ray microbeam (25 and 75 keV) at the Diamond Light Source synchrotron to study the response uniformity and extent of the active area. Higher energy photon irradiation was also carried out at up to 662 keV using different radioisotopes to complement the microbeam data. Different biasing schemes were investigated in terms of biasing the cathode rear electrode (bulk field) and the ring electrodes (lateral fields). The results show that increasing the bulk field with fixed-ratio ring biases and lateral fields with fixed bulk fields increase the active area of the device significantly, which contrasts with previous studies in CdTe, where only an increasing lateral field resulted in an improvement of device performance. This difference is attributed to the larger thickness of the CZT device reported here.

A Search for Fast Moving Magnetic Monopoles with the MACRO Detector

Science.gov (United States)

Liu, Rongzhi

1995-01-01

From Dirac monopole theory to modern GUT's (Grand Unified Theories), magnetic monopoles have attracted much attention from physicists. While Dirac had demonstrated the consistency of magnetic monopoles with quantum eletrodynamics, 't Hooft and Polyakov demonstrated the necessity of monopoles in GUT's. Furthermore, the GUT's supply more clues about magnetic monopoles, including their exceptionally heavy masses ~ 10^{16 } GeV. Both current theories and previous monopole experiments have suggested that the flux of magnetic monopoles is likely to be very small, so it is necessary to have a large area detector to search for them. This thesis presents a search for fast moving magnetic monopoles with the MACRO detector. The MACRO detector is a large underground detector located at Gran Sasso, Italy. Its primary goal is to search for magnetic monopoles at a flux level beyond the Parker bound. It is underground at 3,000 meters water equivalent depth, with a nominal acceptance of 10,000 m^2 sr. It employs liquid scintillator counters, streamer tubes and track-etch detectors which can supply both independent and cross checks for fast monopole candidate events. This search is mainly based on the liquid scintillator counters with primary event selection and energy reconstruction from the ERP system. The 6.2 mus trigger time is based on the time of flight of a fast moving monopole diagonally through one supermodule with a velocity ~ 10^{-2}c. The search uses the "six-month-run" data which were taken from December of 1992 to July of 1993 with the operation of the lower part of the detector. With energy reconstruction ability up to 8 GeV with 22% error, we apply a double-face high energy requirement to reject most muon events from the data sample. We then apply the WFD, streamer tube and strip information to reject non-monopole events. The live time for this analysis is 5,300 hours, with acceptance of 4050 m^2 sr. With no fast monopole candidate event found, we establish an upper

Caliste 64, an innovative CdTe hard X-ray micro-camera

International Nuclear Information System (INIS)

Meuris, A.; Limousin, O.; Pinsard, F.; Le Mer, I.; Lugiez, F.; Gevin, O.; Delagnes, E.; Vassal, M.C.; Soufflet, F.; Bocage, R.

2008-01-01

A prototype 64 pixel miniature camera has been designed and tested for the Simbol-X hard X-ray observatory to be flown on the joint CNES-ASI space mission in 2014. This device is called Caliste 64. It is a high performance spectro-imager with event time-tagging capability, able to detect photons between 2 keV and 250 keV. Caliste 64 is the assembly of a 1 or 2 min thick CdTe detector mounted on top of a readout module. CdTe detectors equipped with Aluminum Schottky barrier contacts are used because of their very low dark current and excellent spectroscopic performance. Front-end electronics is a stack of four IDeF-X V1.1 ASICs, arranged perpendicular to the detection plane, to read out each pixel independently. The whole camera fits in a 10 * 10 * 20 mm 3 volume and is juxtaposable on its four sides. This allows the device to be used as an elementary unit in a larger array of Caliste 64 cameras. Noise performance resulted in an ENC better than 60 electrons rms in average. The first prototype camera is tested at -10 degrees C with a bias of -400 V. The spectrum summed across the 64 pixels results in a resolution of 697 eV FWHM at 13.9 keV and 808 eV FWFM at 59.54 keV. (authors)

CdTe aggregates in KBr crystalline matrix

International Nuclear Information System (INIS)

Bensouici, A.; Plaza, J.L.; Dieguez, E.; Halimi, O.; Boudine, B.; Addala, S.; Guerbous, L.; Sebais, M.

2009-01-01

In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E g (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

CdTe aggregates in KBr crystalline matrix

Energy Technology Data Exchange (ETDEWEB)

Bensouici, A., E-mail: bensouicia@yahoo.f [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Plaza, J.L., E-mail: joseluis.plaza@uam.e [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Dieguez, E. [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Halimi, O.; Boudine, B.; Addala, S. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Guerbous, L. [Centre de recherche nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Sebais, M. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria)

2009-09-15

In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E{sub g} (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

Diamond detector technology: status and perspectives

CERN Document Server

Kagan, Harris; Artuso, M; Bachmair, F; Bäni, L; Bartosik, M; Beacham, J; Beck, H P; Bellini,, V; Belyaev, V; Bentele, B; Berdermann, E; Bergonzo, P; Bes, A; Brom, J-M; Bruzzi, M; Cerv, M; Chiodini, G; Chren, D; Cindro, V; Claus, G; Collot, J; Cumalat, J; Dabrowski, A; D'Alessandro, R; De Boer, W; Dehning, B; Dorfer, C; Dunser, M; Eremin, V; Eusebi, R; Forcolin, G; Forneris, J; Frais-Kölbl, H; Gan, K K; Gastal, M; Giroletti, C; Goffe, M; Goldstein, J; Golubev, A; Gorišek, A; Grigoriev, E; Grosse-Knetter, J; Grummer, A; Gui, B; Guthoff, M; Haughton, I; Hiti, B; Hits, D; Hoeferkamp, M; Hofmann, T; Hosslet, J; Hostachy, J-Y; Hügging, F; Hutton, C; Jansen, H; Janssen, J; Kanxheri, K; Kasieczka, G; Kass, R; Kassel, F; Kis, M; Kramberger, G; Kuleshov, S; Lacoste, A; Lagomarsino, S; Lo Giudice, A; Lukosi, E; Maazouzi, C; Mandic, I; Mathieu, C; Mcfadden, N; Menichelli, M; Mikuž, M; Morozzi, A; Moss, J; Mountain, R; Murphy, S; Muškinja, M; Oh, A; Oliviero, P; Passeri, D; Pernegger, H; Perrino, R; Picollo, F; Pomorski, M; Potenza, R; Quadt, A; Re, A; Reichmann, M; Riley, G; Roe, S; Sanz, D; Scaringella, M; Schaefer, D; Schmidt, C J; Schnetzer, S; Schreiner, T; Sciortino, S; Scorzoni, A; Seidel, S; Servoli, L; Sopko, B; Sopko, V; Spagnolo, S; Spanier, S; Stenson, K; Stone, R; Sutera, C; Taylor, Aaron; Traeger, M; Tromson, D; Trischuk, W; Tuve, C; Uplegger, L; Velthuis, J; Venturi, N; Vittone, E; Wagner, Stephen; Wallny, R; Wang, J C; Weingarten, J; Weiss, C; Wengler, T; Wermes, N; Yamouni, M; Zavrtanik, M

2017-01-01

The status of material development of poly-crystalline chemical vapor deposition (CVD) diamond is presented. We also present beam test results on the independence of signal size on incident par-ticle rate in charged particle detectors based on un-irradiated and irradiated poly-crystalline CVD diamond over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2. The pulse height of the sensors was measured with readout electronics with a peaking time of 6 ns. In addition the first beam test results from 3D detectors made with poly-crystalline CVD diamond are presented. Finally the first analysis of LHC data from the ATLAS Diamond Beam Monitor (DBM) which is based on pixelated poly-crystalline CVD diamond sensors bump-bonded to pixel readout elec-tronics is shown.

Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

Energy Technology Data Exchange (ETDEWEB)

Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

2015-01-15

The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

Fast timing readout for silicon strip detectors

International Nuclear Information System (INIS)

Jhingan, A.; Saneesh, N.; Kumar, M.

2016-01-01

The development and performance of a 16 channel hybrid fast timing amplifier (FTA), for extracting timing information from silicon strip detectors (SSD), is described. The FTA will be used in a time of flight (TOF) measurement, in which one SSD is used to obtain the ion velocity (A) as well as the energy information of a scattered particle. The TOF information with a thin transmission SSD, acting as ΔE detector (Z) in a detector telescope, will provide a unique detection system for the identification of reaction products in the slowed down beam campaign of low energy branch (LEB) at NUSTAR-FAIR. Such a system will also provide large solid angle coverage with ~ 100% detection efficiency, and adequate segmentation for angular information. A good timing resolution (≤ 100 ps) enables to have shorter flight paths, thus a closely packed 4π array should be feasible. Preamplifiers for energy readout in SSD are easily available. A major constraint with SSDs is the missing high density multichannel preamplifiers which can provide both fast timing as well as energy. Provision of both timing and energy processing, generally makes circuit bulky, with higher power consumption, which may not be suitable in SSD arrays. In case of DSSSD, the problem was overcome by using timing from one side and energy from the other side. A custom designed 16 channel FTA has been developed for DSSSD design W from Micron Semiconductors, UK

New developments in clinical applications of CdTe and CdZnTe detectors

International Nuclear Information System (INIS)

Scheiber, C.

1996-01-01

This review about the medical applications of CdTe and CdZnTe is an update on the 1992 paper (1992). This new paper is legitimized by the recent progress which has been made in this field. First of all, the usefulness of a new material, i.e. CdZnTe, has been demonstrated. While the two materials are still being improved, it seems as yet too early to debate which of CdTe:Cl or CdZnTe will be the best choice. Historical applications span over the past 18 years, involving devices like miniature probes for per-operative scintigraphy or the monitoring of physiological functions and, closer to us, appliances dedicated to bone densitometry, and have been expanding as such devices have become commercially available, for many years now. Newly available microelectronic circuitry allows 2D-arrays to be built for digital quantitative X-ray (chest, dental..) and for high-resolution gamma cameras. The clinical demand is very high, especially in the field of nuclear medicine. Although there already exist clinical demonstrators, the future of such CdTe applications depends on further reduction in material and device mounting costs. New perspectives concern XCT applications, but the data resulting from research work are kept for restricted use within industrial R and D laboratories. (orig.)

Developing fine-pixel CdTe detectors for the next generation of high-resolution hard x-ray telescopes

Science.gov (United States)

Christe, Steven

Over the past decade, the NASA Marshall Space Flight Center (MSFC) has been improving the angular resolution of hard X-ray (HXR; 20 "70 keV) optics to the point that we now routinely manufacture optics modules with an angular resolution of 20 arcsec Half Power Diameter (HDP), almost three times the performance of NuSTAR optics (Ramsey et al. 2013; Gubarev et al. 2013a; Atkins et al. 2013). New techniques are currently being developed to provide even higher angular resolution. High angular resolution HXR optics require detectors with a large number of fine pixels in order to adequately sample the telescope point spread function (PSF) over the entire field of view. Excessively over-sampling the PSF will increase readout noise and require more processing with no appreciable increase in image quality. An appropriate level of over-sampling is to have 3 pixels within the HPD. For the HERO mirrors, where the HPD is 26 arcsec over a 6-m focal length converts to 750 μm, the optimum pixel size is around 250 μm. At a 10-m focal length these detectors can support a 16 arcsec HPD. Of course, the detectors must also have high efficiency in the HXR region, good energy resolution, low background, low power requirements, and low sensitivity to radiation damage (Ramsey 2001). The ability to handle high counting rates is also desirable for efficient calibration. A collaboration between Goddard Space Flight Center (GSFC), MSFC, and Rutherford Appleton Laboratory (RAL) in the UK is developing precisely such detectors under an ongoing, funded APRA program (FY2015 to FY2017). The detectors use the RALdeveloped Application Specific Integrated Circuit (ASIC) dubbed HEXITEC, for High Energy X-Ray Imaging Technology. These HEXITEC ASICs can be bonded to 1- or 2- mm-thick Cadmium Telluride (CdTe) or Cadmium-Zinc-Telluride (CZT) to create a fine (250 μm pitch) HXR detector (Jones et al. 2009; Seller et al. 2011). The objectives of this funded effort are to develop and test a HEXITEC

Detectors - Electronics; Detecteurs - Electronique

Energy Technology Data Exchange (ETDEWEB)

Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J. [Lab. de Physique Corpusculaire, Caen Univ., 14 (France)

1998-04-01

The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X {yields} e{sup -} converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the {sup 3}He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

HEROICA: A fast screening facility for the characterization of germanium detectors

Energy Technology Data Exchange (ETDEWEB)

Andreotti, Erica [Universität Tübingen, Auf der Morgenstelle 14, 72076 Tübingen (Germany); Collaboration: GERDA Collaboration

2013-08-08

In the course of 2012, a facility for the fast screening of germanium detectors called HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) has been installed at the HADES underground laboratory in the premises of the Belgian Nuclear Research Centre SCK•CEN, in Mol (Belgium). The facility allows performing a complete characterization of the critical germanium detectors' operational parameters with a rate of about two detectors per week.

Development of Ultra-Fast Silicon Detectors for 4D tracking

Science.gov (United States)

Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

2017-12-01

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

Radiation effects on II-VI compound-based detectors

CERN Document Server

Cavallini, A; Dusi, W; Auricchio, N; Chirco, P; Zanarini, M; Siffert, P; Fougeres, P

2002-01-01

The performance of room temperature CdTe and CdZnTe detectors exposed to a radiation source can be strongly altered by the interaction of the ionizing particles and the material. Up to now, few experimental data are available on the response of II-VI compound detectors to different types of radiation sources. We have carried out a thorough investigation on the effects of gamma-rays, neutrons and electron irradiation both on CdTe : Cl and Cd sub 0 sub . sub 9 Zn sub 0 sub . sub 1 Te detectors. We have studied the detector response after radiation exposure by means of dark current measurements and of quantitative spectroscopic analyses at low and medium energies. The deep traps present in the material have been characterized by means of PICTS (photo-induced current transient spectroscopy) analyses, which allow to determine the trap apparent activation energy and capture cross-section. The evolution of the trap parameters with increasing irradiation doses has been monitored for all the different types of radiati...

Fast simulation of the trigger system of the ATLAS detector at LHC

International Nuclear Information System (INIS)

Epp, B.; Ghete, V.M.; Kuhn, D.; Zhang, Y.J.

2004-01-01

The trigger system of the ATLAS detector aims to maximize the physics coverage and to be open to new and possibly unforeseen physics signatures. It is a multi-level system, composed from a hardware trigger at level-1, followed by the high-level-trigger (level-2 and event-filter). In order to understand its performance, to optimize it and to reduce its total cost, the trigger system requires a detailed simulation which is time- and resource-consuming. An alternative to the full detector simulation is a so-called 'fast simulation' which starts the analysis from particle level and replaces the full detector simulation and the detailed particle tracking with parametrized distributions obtained from the full simulation and/or a simplified detector geometry. The fast simulation offers a less precise description of trigger performance, but it is faster and less resource-consuming. (author)

Ionization signals from diamond detectors in fast-neutron fields

Energy Technology Data Exchange (ETDEWEB)

Weiss, C. [European Organization for Nuclear Research (CERN), Geneva (Switzerland); CIVIDEC Instrumentation, Wien (Austria); Frais-Koelbl, H. [University of Applied Sciences, Wiener Neustadt (Austria); Griesmayer, E.; Kavrigin, P. [CIVIDEC Instrumentation, Wien (Austria); Vienna University of Technology, Wien (Austria)

2016-09-15

In this paper we introduce a novel analysis technique for measurements with single-crystal chemical vapor deposition (sCVD) diamond detectors in fast-neutron fields. This method exploits the unique electronic property of sCVD diamond sensors that the signal shape of the detector current is directly proportional to the initial ionization profile. In fast-neutron fields the diamond sensor acts simultaneously as target and sensor. The interaction of neutrons with the stable isotopes {sup 12}C and {sup 13}C is of interest for fast-neutron diagnostics. The measured signal shapes of detector current pulses are used to identify individual types of interactions in the diamond with the goal to select neutron-induced reactions in the diamond and to suppress neutron-induced background reactions as well as γ-background. The method is verified with experimental data from a measurement in a 14.3 MeV neutron beam at JRC-IRMM, Geel/Belgium, where the {sup 13}C(n, α){sup 10}Be reaction was successfully extracted from the dominating background of recoil protons and γ-rays and the energy resolution of the {sup 12}C(n, α){sup 9}Be reaction was substantially improved. The presented analysis technique is especially relevant for diagnostics in harsh radiation environments, like fission and fusion reactors. It allows to extract the neutron spectrum from the background, and is particularly applicable to neutron flux monitoring and neutron spectroscopy. (orig.)

CVD diamond based soft X-ray detector with fast response

International Nuclear Information System (INIS)

Li Fang; Hou Lifei; Su Chunxiao; Yang Guohong; Liu Shenye

2010-01-01

A soft X-ray detector has been made with high quality chemical vapor deposited (CVD) diamond and the electrical structure of micro-strip. Through the measurement of response time on a laser with the pulse width of 10 ps, the full width at half maximum of the data got in the oscilloscope was 115 ps. The rise time of the CVD diamond detector was calculated to be 49 ps. In the experiment on the laser prototype facility, the signal got by the CVD diamond detector was compared with that got by a soft X-ray spectrometer. Both signals coincided well. The detector is proved to be a kind of reliable soft X-ray detector with fast response and high signal-to-noise ratio. (authors)

Semidetector-radiation detector arrangement, as well as its application in a tomographic scanner, in a device to determine radiation intensity or to measure the radiation penetration or absorption

International Nuclear Information System (INIS)

Kaufman, L.; Hosier, K.E. Jr.

1979-01-01

The CdTe detector or a plate with several CdTe or HgI 2 detectors is suitable for use in computer controlled tomographic X-ray scanners. The detector is used in connection with a pulsed radiation source (Am 241) and a frequency filter technique for measuring the resulting electrical charge pulse of the detector. Merely a narrow frequency band is selected according to the measured duration of the incident radiation pulses. (DG) [de

Study on the fast neutron sensitivity of thermoluminescent detectors

International Nuclear Information System (INIS)

Szabo, P.P.; Palfalvi, J.

1984-03-01

Fast neutron (14.7 MeV) sensitivity of several thermoluminescent detectors was determined. The investigated detectors were MTS-N type pellets (made in Poland) used routinely in the authors' institute for personnel dosimetry, 7 LiF powder used for accident dosimetry, CaSO 4 :Dy and CaSO 4 :Tm powders (made in Hungary) used for enviromental monitoring and space dosimetry. Both free-in-air and on-phantom irradiations were performed. The new results are compared with responses calculated and measured earlier. (author)

Medipix2 based CdTe microprobe for dental imaging

International Nuclear Information System (INIS)

Vykydal, Z; Jakubek, J; Fauler, A; Fiederle, M; Zwerger, A; Svestkova, M

2011-01-01

Medical imaging devices and techniques are demanded to provide high resolution and low dose images of samples or patients. Hybrid semiconductor single photon counting devices together with suitable sensor materials and advanced techniques of image reconstruction fulfil these requirements. In particular cases such as the direct observation of dental implants also the size of the imaging device itself plays a critical role. This work presents the comparison of 2D radiographs of tooth provided by a standard commercial dental imaging system (Gendex 765DC X-ray tube with VisualiX scintillation detector) and two Medipix2 USB Lite detectors one equipped with a Si sensor (300 μm thick) and one with a CdTe sensor (1 mm thick). Single photon counting capability of the Medipix2 device allows virtually unlimited dynamic range of the images and thus increases the contrast significantly. The dimensions of the whole USB Lite device are only 15 mm × 60 mm of which 25% consists of the sensitive area. Detector of this compact size can be used directly inside the patients' mouth.

Photosensitive space charge limited current in screen printed CdTe thin films

Science.gov (United States)

Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2018-05-01

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

Science.gov (United States)

Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

2009-04-01

The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

Advanced Multilayer Composite Heavy-Oxide Scintillator Detectors for High Efficiency Fast Neutron Detection

Science.gov (United States)

Ryzhikov, Vladimir D.; Naydenov, Sergei V.; Pochet, Thierry; Onyshchenko, Gennadiy M.; Piven, Leonid A.; Smith, Craig F.

2018-01-01

We have developed and evaluated a new approach to fast neutron and neutron-gamma detection based on large-area multilayer composite heterogeneous detection media consisting of dispersed granules of small-crystalline scintillators contained in a transparent organic (plastic) matrix. Layers of the composite material are alternated with layers of transparent plastic scintillator material serving as light guides. The resulting detection medium - designated as ZEBRA - serves as both an active neutron converter and a detection scintillator which is designed to detect both neutrons and gamma-quanta. The composite layers of the ZEBRA detector consist of small heavy-oxide scintillators in the form of granules of crystalline BGO, GSO, ZWO, PWO and other materials. We have produced and tested the ZEBRA detector of sizes 100x100x41 mm and greater, and determined that they have very high efficiency of fast neutron detection (up to 49% or greater), comparable to that which can be achieved by large sized heavy-oxide single crystals of about Ø40x80 cm3 volume. We have also studied the sensitivity variation to fast neutron detection by using different types of multilayer ZEBRA detectors of 100 cm2 surface area and 41 mm thickness (with a detector weight of about 1 kg) and found it to be comparable to the sensitivity of a 3He-detector representing a total cross-section of about 2000 cm2 (with a weight of detector, including its plastic moderator, of about 120 kg). The measured count rate in response to a fast neutron source of 252Cf at 2 m for the ZEBRA-GSO detector of size 100x100x41 mm3 was 2.84 cps/ng, and this count rate can be doubled by increasing the detector height (and area) up to 200x100 mm2. In summary, the ZEBRA detectors represent a new type of high efficiency and low cost solid-state neutron detector that can be used for stationary neutron/gamma portals. They may represent an interesting alternative to expensive, bulky gas counters based on 3He or 10B neutron

High-Sensitivity Fast Neutron Detector KNK-2-8M

Science.gov (United States)

Koshelev, A. S.; Dovbysh, L. Ye.; Ovchinnikov, M. A.; Pikulina, G. N.; Drozdov, Yu. M.; Chuklyaev, S. V.; Pepyolyshev, Yu. N.

2017-12-01

The design of the fast neutron detector KNK-2-8M is outlined. The results of he detector study in the pulse counting mode with pulses from 238U nuclei fission in the radiator of the neutron-sensitive section and in the current mode with separation of functional section currents are presented. The possibilities of determination of the effective number of 238U nuclei in the radiator of the neutron-sensitive section are considered. The diagnostic capabilities of the detector in the counting mode are demonstrated, as exemplified by the analysis of reference data on characteristics of neutron fields in the BR-1 reactor hall. The diagnostic capabilities of the detector in the current mode are demonstrated, as exemplified by the results of measurements of 238U fission intensity in the power startup of the BR-K1 reactor in the fission pulse generation mode with delayed neutrons and the detector placed in the reactor cavity in conditions of large-scale variation of the reactor radiation fields.

Fast neutron detection at near-core location of a research reactor with a SiC detector

Science.gov (United States)

Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

2018-04-01

The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

Fast sub-electron detectors review for interferometry

Science.gov (United States)

Feautrier, Philippe; Gach, Jean-Luc; Bério, Philippe

2016-08-01

New disruptive technologies are now emerging for detectors dedicated to interferometry. The detectors needed for this kind of applications need antonymic characteristics: the detector noise must be very low, especially when the signal is dispersed but at the same time must also sample the fast temporal characteristics of the signal. This paper describes the new fast low noise technologies that have been recently developed for interferometry and adaptive optics. The first technology is the Avalanche PhotoDiode (APD) infrared arrays made of HgCdTe. In this paper are presented the two programs that have been developed in that field: the Selex Saphira 320x256 [1] and the 320x255 RAPID detectors developed by Sofradir/CEA LETI in France [2], [3], [4]. Status of these two programs and future developments are presented. Sub-electron noise can now be achieved in the infrared using this technology. The exceptional characteristics of HgCdTe APDs are due to a nearly exclusive impaction ionization of the electrons, and this is why these devices have been called "electrons avalanche photodiodes" or e-APDs. These characteristics have inspired a large effort in developing focal plan arrays using HgCdTe APDs for low photon number applications such as active imaging in gated mode (2D) and/or with direct time of flight detection (3D imaging) and, more recently, passive imaging for infrared wave front correction and fringe tracking in astronomical observations. In addition, a commercial camera solution called C-RED, based on Selex Saphira and commercialized by First Light Imaging [5], is presented here. Some groups are also working with instruments in the visible. In that case, another disruptive technology is showing outstanding performances: the Electron Multiplying CCDs (EMCCD) developed mainly by e2v technologies in UK. The OCAM2 camera, commercialized by First Light Imaging [5], uses the 240x240 EMMCD from e2v and is successfully implemented on the VEGA instrument on the CHARA

High-speed crystal detection and characterization using a fast-readout detector.

Science.gov (United States)

Aishima, Jun; Owen, Robin L; Axford, Danny; Shepherd, Emma; Winter, Graeme; Levik, Karl; Gibbons, Paul; Ashton, Alun; Evans, Gwyndaf

2010-09-01

A novel raster-scanning method combining continuous sample translation with the fast readout of a Pilatus P6M detector has been developed on microfocus beamline I24 at Diamond Light Source. This fast grid-scan tool allows the rapid evaluation of large sample volumes without the need to increase the beam size at the sample through changes in beamline hardware. A slow version is available for slow-readout detectors. Examples of grid-scan use in centring optically invisible samples and in detecting and characterizing numerous microcrystals on a mesh-like holder illustrate the most common applications of the grid scan now in routine use on I24.

CdTe Photovoltaics for Sustainable Electricity Generation

Science.gov (United States)

Munshi, Amit; Sampath, Walajabad

2016-09-01

Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

Caliste 64, an innovative CdTe hard X-ray micro-camera

Energy Technology Data Exchange (ETDEWEB)

Meuris, A.; Limousin, O.; Pinsard, F.; Le Mer, I. [CEA Saclay, DSM, DAPNIA, Serv. Astrophys., F-91191 Gif sur Yvette (France); Lugiez, F.; Gevin, O.; Delagnes, E. [CEA Saclay, DSM, DAPNIA, Serv. Electron., F-91191 Gif sur Yvette (France); Vassal, M.C.; Soufflet, F.; Bocage, R. [3D-plus Company, F-78532 Buc (France)

2008-07-01

A prototype 64 pixel miniature camera has been designed and tested for the Simbol-X hard X-ray observatory to be flown on the joint CNES-ASI space mission in 2014. This device is called Caliste 64. It is a high performance spectro-imager with event time-tagging capability, able to detect photons between 2 keV and 250 keV. Caliste 64 is the assembly of a 1 or 2 min thick CdTe detector mounted on top of a readout module. CdTe detectors equipped with Aluminum Schottky barrier contacts are used because of their very low dark current and excellent spectroscopic performance. Front-end electronics is a stack of four IDeF-X V1.1 ASICs, arranged perpendicular to the detection plane, to read out each pixel independently. The whole camera fits in a 10 * 10 * 20 mm{sup 3} volume and is juxtaposable on its four sides. This allows the device to be used as an elementary unit in a larger array of Caliste 64 cameras. Noise performance resulted in an ENC better than 60 electrons rms in average. The first prototype camera is tested at -10 degrees C with a bias of -400 V. The spectrum summed across the 64 pixels results in a resolution of 697 eV FWHM at 13.9 keV and 808 eV FWFM at 59.54 keV. (authors)

High Flux Energy-Resolved Photon-Counting X-Ray Imaging Arrays with CdTe and CdZnTe for Clinical CT

International Nuclear Information System (INIS)

Barber, William C.; Hartsough, Neal E.; Gandhi, Thulasidharan; Iwanczyk, Jan S.; Wessel, Jan C.; Nygard, Einar; Malakhov, Nail; Wawrzyniak, Gregor; Dorholt, Ole; Danielsen, Roar

2013-06-01

We have fabricated fast room-temperature energy dispersive photon counting x-ray imaging arrays using pixellated cadmium zinc (CdTe) and cadmium zinc telluride (CdZnTe) semiconductors. We have also fabricated fast application specific integrated circuits (ASICs) with a two dimensional (2D) array of inputs for readout from the CdZnTe sensors. The new CdTe and CdZnTe sensors have a 2D array of pixels with a 0.5 mm pitch and can be tiled in 2D. The new 2D ASICs have four energy discriminators per pixel with a linear energy response across the entire dynamic range for clinical CT. The ASICs can also be tiled in 2D and are designed to fit within the active area of the 2D sensors. We have measured several important performance parameters including; an output count rate (OCR) in excess of 20 million counts per second per square mm, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor less than 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdTE and CdZnTe sensors incurring very little additional capacitance. We present a comparison of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, and noise floor. (authors)

Signal and noise analysis in TRION-Time-Resolved Integrative Optical Fast Neutron detector

International Nuclear Information System (INIS)

Vartsky, D; Feldman, G; Mor, I; Goldberg, M B; Bar, D; Dangendorf, V

2009-01-01

TRION is a sub-mm spatial resolution fast neutron imaging detector, which employs an integrative optical time-of-flight technique. The detector was developed for fast neutron resonance radiography, a method capable of detecting a broad range of conventional and improvised explosives. In this study we have analyzed in detail, using Monte-Carlo calculations and experimentally determined parameters, all the processes that influence the signal and noise in the TRION detector. In contrast to event-counting detectors where the signal-to-noise ratio is dependent only on the number of detected events (quantum noise), in an energy-integrating detector additional factors, such as the fluctuations in imparted energy, number of photoelectrons, system gain and other factors will contribute to the noise. The excess noise factor (over the quantum noise) due to these processes was 4.3, 2.7, 2.1, 1.9 and 1.9 for incident neutron energies of 2, 4, 7.5, 10 and 14 MeV, respectively. It is shown that, even under ideal light collection conditions, a fast neutron detection system operating in an integrative mode cannot be quantum-noise-limited due to the relatively large variance in the imparted proton energy and the resulting scintillation light distributions.

High-quality CdTe films from nanoparticle precursors

Energy Technology Data Exchange (ETDEWEB)

Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

Neutron detection performance of silicon carbide and diamond detectors with incomplete charge collection properties

Energy Technology Data Exchange (ETDEWEB)

Hodgson, M., E-mail: michael.hodgson@becq.co.uk [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Lohstroh, A.; Sellin, P. [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomas, D. [NPL, Teddington TW11 0LW (United Kingdom)

2017-03-01

The benefits of neutron detection and spectroscopy with carbon based, wide band gap, semiconductor detectors have previously been discussed within the literature. However, at the time of writing there are still limitations with these detectors related to availability, cost, size and perceived quality. This study demonstrates that lower quality materials—indicated by lower charge collection efficiency (CCE), poor resolution and polarisation effect—available at wafer scale and lower cost, can fulfil requirements for fast neutron detection and spectroscopy for fluxes over several orders of magnitude, where only coarse energy discrimination is required. In this study, a single crystal diamond detector (D-SC, with 100% CCE), a polycrystalline diamond (D-PC, with ≈4% CCE) and semi-insulating silicon carbide (SiC-SI, with ≈35% CCE) have been compared for alpha and fast neutron performance. All detectors demonstrated alpha induced polarisation effects in the form of a change of both energy peak position and count rate with irradiation time. Despite these operational issues the ability to detect fast neutrons and distinguish neutron energies was observed. This performance was demonstrated over a wide dynamic range (500–40,000 neutrons/s), with neutron induced polarisation being demonstrated in D-PC and SiC-SI at high fluxes.

Linear and mass attenuation coefficient for CdTe compound of X-rays from 10 to 100 keV energy range in different phases

Energy Technology Data Exchange (ETDEWEB)

Saim, A., E-mail: saim1989asma@gmail.com; Tebboune, A.; Berkok, H.; Belameiri, N.; Belbachir, A.H.

2014-07-25

The Full Potential Linear Muffin Tin Orbitals method within the density functional theory has been utilized to calculate structural and electronic properties of the CdTe compound. We have checked that the CdTe has two phase-transitions from zinc-blend to cinnabar and from cinnabar to rocksalt. We have found that the rigidity, the energy and the nature of the gap change according to the phase change, so we can predict that a CdTe detector may have different behaviors in different phase conditions. In order to investigate this behavior change, the linear and the mass attenuation coefficients of X-ray in rocksalt, zinc-blend and cinnabar structures are calculated from 10 keV to100 keV, using the XCOM data. We have found that when CdTe undergoes a phase transition from zinc-blend to cinnabar, its linear attenuation coefficient decreases down to a value of about 100 times smaller than its initial one, and when it undergoes a transition from cinnabar to rocksalt it increases up to a value about 90 times larger than its initial one.

High-sensitivity fast neutron detector KNK-2-7M

Energy Technology Data Exchange (ETDEWEB)

Koshelev, A. S., E-mail: alexsander.coshelev@yandex.ru; Dovbysh, L. Ye.; Ovchinnikov, M. A.; Pikulina, G. N.; Drozdov, Yu. M. [Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics (Russian Federation); Chuklyaev, S. V. [Research Institute of Materials Technology (Russian Federation)

2015-12-15

The construction of the fast neutron detector KNK-2-7M is briefly described. The results of the study of the detector in the pulse-counting mode are given for the fissions of {sup 237}Np nuclei in the radiator of the neutron-sensitive section and in the current mode with the separation of sectional currents of functional sections. The possibilities of determining the effective number of {sup 237}Np nuclei in the radiator of the neutronsensitive section are considered. The diagnostic possibilities of the detector in the counting mode are shown by example of the analysis of the reference data from the neutron-field characteristics in the working hall of the BR-K1 reactor. The diagnostic possibilities of the detector in the current operating mode are shown by example of the results of measuring the {sup 237}Np-fission intensity in the BR-K1 reactor power start-ups implemented in the mode of fission-pulse generation on delayed neutrons at the detector arrangement inside the reactor core cavity under conditions of a wide variation of the reactor radiation field.

Photoconductive Detectors with Fast Temporal Response for Laser Produced Plasma Experiments

International Nuclear Information System (INIS)

M. J. May; C. Halvorson; T. Perry; F. Weber; P. Young; C. Silbernagel

2008-01-01

Processes during laser plasma experiments typically have time scales that are less than 100 ps. The measurement of these processes requires X-ray detectors with fast temporal resolution. We have measured the temporal responses and linearity of several different X-ray sensitive Photoconductive Detectors (PCDs). The active elements of the detectors investigated include both diamond (natural and synthetic) and GaAs crystals. The typical time responses of the GaAs PCDs are approximately 60 ps, respectively. Some characterizations using X-ray light from a synchrotron light source are presented

Charge-carrier transport and recombination in heteroepitaxial CdTe

International Nuclear Information System (INIS)

Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

2014-01-01

We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm 2 (Vs) −1 and diffusion coefficient D of 17 cm 2  s −1 . We find limiting recombination at the epitaxial film surface (surface recombination velocity S surface  = (2.8 ± 0.3) × 10 5  cm s −1 ) and at the heteroepitaxial interface (interface recombination velocity S interface  = (4.8 ± 0.5) × 10 5  cm s −1 ). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

Towards radiation hard converter material for SiC-based fast neutron detectors

Science.gov (United States)

Tripathi, S.; Upadhyay, C.; Nagaraj, C. P.; Venkatesan, A.; Devan, K.

2018-05-01

In the present work, Geant4 Monte-Carlo simulations have been carried out to study the neutron detection efficiency of the various neutron to other charge particle (recoil proton) converter materials. The converter material is placed over Silicon Carbide (SiC) in Fast Neutron detectors (FNDs) to achieve higher neutron detection efficiency as compared to bare SiC FNDs. Hydrogenous converter material such as High-Density Polyethylene (HDPE) is preferred over other converter materials due to the virtue of its high elastic scattering reaction cross-section for fast neutron detection at room temperature. Upon interaction with fast neutrons, hydrogenous converter material generates recoil protons which liberate e-hole pairs in the active region of SiC detector to provide a detector signal. The neutron detection efficiency offered by HDPE converter is compared with several other hydrogenous materials viz., 1) Lithium Hydride (LiH), 2) Perylene, 3) PTCDA . It is found that, HDPE, though providing highest efficiency among various studied materials, cannot withstand high temperature and harsh radiation environment. On the other hand, perylene and PTCDA can sustain harsh environments, but yields low efficiency. The analysis carried out reveals that LiH is a better material for neutron to other charge particle conversion with competent efficiency and desired radiation hardness. Further, the thickness of LiH has also been optimized for various mono-energetic neutron beams and Am-Be neutron source generating a neutron fluence of 109 neutrons/cm2. The optimized thickness of LiH converter for fast neutron detection is found to be ~ 500 μm. However, the estimated efficiency for fast neutron detection is only 0.1%, which is deemed to be inadequate for reliable detection of neutrons. A sensitivity study has also been done investigating the gamma background effect on the neutron detection efficiency for various energy threshold of Low-Level Discriminator (LLD). The detection

Fast infrared detectors for beam diagnostics with synchrotron radiation

International Nuclear Information System (INIS)

Bocci, A.; Marcelli, A.; Pace, E.; Drago, A.; Piccinini, M.; Cestelli Guidi, M.; De Sio, A.; Sali, D.; Morini, P.; Piotrowski, J.

2007-01-01

Beam diagnostic is a fundamental constituent of any particle accelerators either dedicated to high-energy physics or to synchrotron radiation experiments. All storage rings emit radiations. Actually they are high brilliant sources of radiation: the synchrotron radiation emission covers from the infrared range to the X-ray domain with a pulsed structure depending on the temporal characteristics of the stored beam. The time structure of the emitted radiation is extremely useful as a tool to perform time-resolved experiments. However, this radiation can be also used for beam diagnostic to determine the beam stability and to measure the dimensions of the e - or e + beam. Because of the temporal structure of the synchrotron radiation to perform diagnostic, we need very fast detectors. Indeed, the detectors required for the diagnostics of the stored particle bunches at third generation synchrotron radiation sources and FEL need response times in the sub-ns and even ps range. To resolve the bunch length and detect bunch instabilities, X-ray and visible photon detectors may be used achieving response times of a few picoseconds. Recently, photon uncooled infrared devices optimized for the mid-IR range realized with HgCdTe semiconductors allowed to obtain sub-nanosecond response times. These devices can be used for fast detection of intense IRSR sources and for beam diagnostic. We present here preliminary experimental data of the pulsed synchrotron radiation emission of DAΦNE, the electron positron collider of the LNF laboratory of the INFN, performed with new uncooled IR detectors with a time resolution of a few hundreds of picoseconds

Development of an integrated four-channel fast avalanche-photodiode detector system with nanosecond time resolution

Science.gov (United States)

Li, Zhenjie; Li, Qiuju; Chang, Jinfan; Ma, Yichao; Liu, Peng; Wang, Zheng; Hu, Michael Y.; Zhao, Jiyong; Alp, E. E.; Xu, Wei; Tao, Ye; Wu, Chaoqun; Zhou, Yangfan

2017-10-01

A four-channel nanosecond time-resolved avalanche-photodiode (APD) detector system is developed at Beijing Synchrotron Radiation. It uses a single module for signal processing and readout. This integrated system provides better reliability and flexibility for custom improvement. The detector system consists of three parts: (i) four APD sensors, (ii) four fast preamplifiers and (iii) a time-digital-converter (TDC) readout electronics. The C30703FH silicon APD chips fabricated by Excelitas are used as the sensors of the detectors. It has an effective light-sensitive area of 10 × 10 mm2 and an absorption layer thickness of 110 μm. A fast preamplifier with a gain of 59 dB and bandwidth of 2 GHz is designed to readout of the weak signal from the C30703FH APD. The TDC is realized by a Spartan-6 field-programmable-gate-array (FPGA) with multiphase method in a resolution of 1ns. The arrival time of all scattering events between two start triggers can be recorded by the TDC. The detector has been used for nuclear resonant scattering study at both Advanced Photon Source and also at Beijing Synchrotron Radiation Facility. For the X-ray energy of 14.4 keV, the time resolution, the full width of half maximum (FWHM) of the detector (APD sensor + fast amplifier) is 0.86 ns, and the whole detector system (APD sensors + fast amplifiers + TDC readout electronics) achieves a time resolution of 1.4 ns.

A Fast Monte Carlo Simulation for the International Linear Collider Detector

International Nuclear Information System (INIS)

Furse, D.

2005-01-01

The following paper contains details concerning the motivation for, implementation and performance of a Java-based fast Monte Carlo simulation for a detector designed to be used in the International Linear Collider. This simulation, presently included in the SLAC ILC group's org.lcsim package, reads in standard model or SUSY events in STDHEP file format, stochastically simulates the blurring in physics measurements caused by intrinsic detector error, and writes out an LCIO format file containing a set of final particles statistically similar to those that would have found by a full Monte Carlo simulation. In addition to the reconstructed particles themselves, descriptions of the calorimeter hit clusters and tracks that these particles would have produced are also included in the LCIO output. These output files can then be put through various analysis codes in order to characterize the effectiveness of a hypothetical detector at extracting relevant physical information about an event. Such a tool is extremely useful in preliminary detector research and development, as full simulations are extremely cumbersome and taxing on processor resources; a fast, efficient Monte Carlo can facilitate and even make possible detector physics studies that would be very impractical with the full simulation by sacrificing what is in many cases inappropriate attention to detail for valuable gains in time required for results

The semi-conductor detectors: art state, new concepts

International Nuclear Information System (INIS)

Pochet, T.

1993-01-01

After a brief recall of signal formation principle in a detector and of its different operation modes, the high Z materials as CdTe, HgI 2 , GaAs ,Ge and Si are presented, followed by the new 'thin layer' semiconductors

Fast neutron detection using solid state nuclear track detectors

International Nuclear Information System (INIS)

Vilela, E.C.

1990-01-01

CR-39 and Makrofol-E solid state nuclear track detectors were studied aiming their application to fast neutron detection. Optimum etching conditions of those two kinds of materials were determined the followings - the Makrofol-E detector is electrochemically etched in a PEW solution (15% KOH, 40% ethilic alcohol and 45% water) for 2 h., with an applied electric field strength of 30 kV/cm (r/m/s/) and frequency of 2 kHz, at room temperature; - the CR-39 detector is chemically pre-etched during 1 h in a 20% (w/v) NaOH solution at 70 sup(0)C, followed by 13 h electrochemical etch using the same solution at room temperature and an electric field strength of 30 kV/cm (r.m.s.) and frequency of 2 kHz.(E.G.)

Comparison of Experiment and Simulation of the triple GEM-Based Fast Neutron Detector

International Nuclear Information System (INIS)

Wang Xiao-Dong; Luo Wen; Zhang Jun-Wei; Yang He-Run; Duan Li-Min; Lu Chen-Gui; Hu Rong-Jiang; Hu Bi-Tao; Zhang Chun-Hui; Yang Lei; Zhou Jian-Rong; An Lv-Xing

2015-01-01

A detector for fast neutrons based on a 10 × 10 cm"2 triple gas electron multiplier (GEM) device is developed and tested. A neutron converter, which is a high density polyethylene (HDPE) layer, is combined with the triple GEM detector cathode and placed inside the detector, in the path of the incident neutrons. The detector is tested by obtaining the energy deposition spectrum with an Am Be neutron source in the Institute of Modern Physics (IMP) at Lanzhou. In the present work we report the results of the tests and compare them with those of simulations. The transport of fast neutrons and their interactions with the different materials in the detector are simulated with the GEANT4 code, to understand the experimental results. The detector displays a clear response to the incident fast neutrons. However, an unexpected disagreement in the energy dependence of the response between the simulated and measured spectra is observed. The neutron sources used in our simulation include deuterium-tritium (DT, 14 MeV), deuterium-deuterium (DD, 2.45 MeV), and Am Be sources. The simulation results also show that among the secondary particles generated by the incident neutron, the main contributions to the total energy deposition are from recoil protons induced in hydrogen-rich HDPE or Kapton (GEM material), and activation photons induced by neutron interaction with Ar atoms. Their contributions account for 90% of the total energy deposition. In addition, the dependence of neutron deposited energy spectrum on the composition of the gas mixture is presented. (paper)

Neutron detection at jet using artificial diamond detectors

International Nuclear Information System (INIS)

Pillon, M.; Angelone, M.; Lattanzi, D.; Marinelli, M.; Milani, E.; Tucciarone, A.; Verona-Rinati, G.; Popovichev, S.; Montereali, R.M.; Vincenti, M.A.; Murari, A.

2007-01-01

Artificial diamond neutron detectors recently proved to be promising devices to measure the neutron production on large experimental fusion machines. Diamond detectors are very promising detectors to be used in fusion environment due to their radiation hardness, low sensitivity to gamma rays, fast response and high energy resolution. High quality 'electronic grade' diamond films are produced through microwave chemical vapour deposition (CVD) technique. Two CVD diamond detectors have been installed and operated at joint European torus (JET), Culham Science Centre, UK. One of these detectors was a polycrystalline CVD diamond film; about 12 mm 2 area and 30 μm thickness while the second was a monocrystalline film of about 5 mm 2 area and 20 μm thick. Both diamonds were covered with 2 μm of lithium fluoride (LiF) 95% enriched in 6 Li. The LiF layer works as a neutron-to-charged particle converter so these detectors can measure thermalized neutrons. Their output signals were compared to JET total neutron yield monitors (KN1 diagnostic) realized with a set of uranium fission chambers. Despite their small active volumes the diamond detectors were able to measure total neutron yields with good reliability and stability during the recent JET experimental campaign of 2006

Triple GEM gas detectors as real time fast neutron beam monitors for spallation neutron sources

International Nuclear Information System (INIS)

Murtas, F; Claps, G; Croci, G; Tardocchi, M; Pietropaolo, A; Cippo, E Perelli; Rebai, M; Gorini, G; Frost, C D; Raspino, D; Rhodes, N J; Schooneveld, E M

2012-01-01

A fast neutron beam monitor based on a triple Gas Electron Multiplier (GEM) detector was developed and tested for the ISIS spallation neutron source in U.K. The test on beam was performed at the VESUVIO beam line operating at ISIS. The 2D fast neutron beam footprint was recorded in real time with a spatial resolution of a few millimeters thanks to the patterned detector readout.

Monte Carlo simulations of the particle transport in semiconductor detectors of fast neutrons

International Nuclear Information System (INIS)

Sedlačková, Katarína; Zaťko, Bohumír; Šagátová, Andrea; Nečas, Vladimír

2013-01-01

Several Monte Carlo all-particle transport codes are under active development around the world. In this paper we focused on the capabilities of the MCNPX code (Monte Carlo N-Particle eXtended) to follow the particle transport in semiconductor detector of fast neutrons. Semiconductor detector based on semi-insulating GaAs was the object of our investigation. As converter material capable to produce charged particles from the (n, p) interaction, a high-density polyethylene (HDPE) was employed. As the source of fast neutrons, the 239 Pu–Be neutron source was used in the model. The simulations were performed using the MCNPX code which makes possible to track not only neutrons but also recoiled protons at all interesting energies. Hence, the MCNPX code enables seamless particle transport and no other computer program is needed to process the particle transport. The determination of the optimal thickness of the conversion layer and the minimum thickness of the active region of semiconductor detector as well as the energy spectra simulation were the principal goals of the computer modeling. Theoretical detector responses showed that the best detection efficiency can be achieved for 500 μm thick HDPE converter layer. The minimum detector active region thickness has been estimated to be about 400 μm. -- Highlights: ► Application of the MCNPX code for fast neutron detector design is demonstrated. ► Simulations of the particle transport through conversion film of HDPE are presented. ► Simulations of the particle transport through detector active region are presented. ► The optimal thickness of the HDPE conversion film has been calculated. ► Detection efficiency of 0.135% was reached for 500 μm thick HDPE conversion film

The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

CERN Document Server

Zang, A; Ballabriga, R; Bisello, F; Campbell, M; Celi, J C; Fauler, A; Fiederle, M; Jensch, M; Kochanski, N; Llopart, X; Michel, N; Mollenhauer, U; Ritter, I; Tennert, F; Wölfel, S; Wong, W; Michel, T

2015-01-01

The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation wa...

Characterization and photoluminescence studies of CdTe ...

Indian Academy of Sciences (India)

Administrator

Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

CdTe and Cd sub 1 sub - sub x Zn sub x Te for nuclear detectors: facts and fictions

CERN Document Server

Fougeres, P; Hageali, M; Koebel, J M; Regal, R

1999-01-01

Both CdTe and Cd sub 1 sub - sub x Zn sub x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and gamma-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best.

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

Energy Technology Data Exchange (ETDEWEB)

Ricq, St

1999-09-28

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

Ultrafast spin injection from Cd1-x Mn x Te magnetic barriers into a CdTe quantum well studied by pump-probe spectroscopy

International Nuclear Information System (INIS)

Aoshima, I.; Nishibayashi, K.; Souma, I.; Murayama, A.; Oka, Y.

2006-01-01

Spin injection from diluted magnetic semiconductor (DMS) barriers of Cd 1- x Mn x Te into a quantum well (QW) of CdTe is studied, by means of pump-probe absorption spectroscopy in magnetic fields. Fast decay characteristics of circularly polarized differential absorbances of spin-polarized excitons in the DMS barrier show the exciton injection time of 6 ps from the barriers into the QW. In accordance with the fast relaxation of the spin-polarized excitons from the barrier, we observe the rise of circular polarization degree for the differential absorption of the CdTe QW in magnetic fields, evidently indicating the spin injection. In addition, the circular polarization degree up to 0.3 is developed in the well immediately after pumping, originating from the fast relaxation of a heavy hole (hh) spin less than 0.2 ps, due to the giant Zeeman effect caused by the penetration of the hh wave function into the DMS barriers

Spectral correction algorithm for multispectral CdTe x-ray detectors

DEFF Research Database (Denmark)

Christensen, Erik D.; Kehres, Jan; Gu, Yun

2017-01-01

Compared to the dual energy scintillator detectors widely used today, pixelated multispectral X-ray detectors show the potential to improve material identification in various radiography and tomography applications used for industrial and security purposes. However, detector effects, such as charge...

Thermal and fast neutron dosimetry using artificial single crystal diamond detectors

International Nuclear Information System (INIS)

Angelone, M.; Pillon, M.; Prestopino, G.; Marinelli, Marco; Milani, E.; Verona, C.; Verona-Rinati, G.; Aielli, G.; Cardarelli, R.; Santonico, R.; Bedogni, R.; Esposito, A.

2011-01-01

In this work we propose the artificial Single Crystal Diamond (SCD) detector covered with a thin layer (0.5 μm/4 μm) of 6 LiF as a simultaneous thermal and fast neutron fluence monitor. Some interesting properties of the diamond response versus the neutron energy are evidenced thanks to Monte Carlo simulation using the MCNPX code which allows to propose the diamond detector also as an ambient dose equivalent (H∗(10)) monitor (REM counter).

Fast optical recording media based on semiconductor nanostructures for image recording and processing

International Nuclear Information System (INIS)

Kasherininov, P. G.; Tomasov, A. A.

2008-01-01

Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10 6 cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10 -2 V/cm 2 , and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

Science.gov (United States)

Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

2013-08-01

VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μ W from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e - RMS at room temperature.

Development of a two-dimensional ASIC for hard X-ray spectroscopy and imaging with a CdTe pixel detector

International Nuclear Information System (INIS)

Hiruta, Tatsuro; Tamura, K.; Ikeda, H.; Nakazawa, K.; Takasima, T.; Takahashi, T.

2006-01-01

We are developing a two-dimensional analog ASIC for the readout of pixel sensors based on silicon (Si) or cadmium telluride (CdTe) for spectroscopic imaging observations in the X-ray and gamma-ray regions. The aim for the ASIC is to obtain a low-noise performance better than 100 electrons (rms) with self-triggering capabilities. As the first step of prototyping, we have fabricated several ASICs. We obtained an energy resolution of 5.4 keV (FWHM) for 81 keV gamma-rays from 133 Ba with a one-dimensional ASIC connected to a CdTe diode and also verified a readout architecture via a two-dimensional ASIC with 144 pixel channels. Based on the results obtained and experience gained through prototype ASICs, we are developing a 4096-channel two-dimensional analog ASIC

Interaction of porphyrins with CdTe quantum dots

International Nuclear Information System (INIS)

Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

2011-01-01

Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

Ellipsometry of rough CdTe(211)B-Ge(211) surfaces grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Badano, Giacomo; Ballet, Philippe; Zanatta, Jean-Paul; Baudry, Xavier; Million, Alain; Garland, James W.

2006-01-01

The effect of surface roughness on the ellipsometric response of semiconductor surfaces is investigated. CdTe(211)B layers were grown on Ge(211) by molecular beam epitaxy using less than optimal growth conditions to enhance the formation of surface roughness. Their optical properties, measured by rotating-compensator ellipsometry, showed small but significant sample-to-sample differences not explainable in terms of nanometer-scale roughness. A critical-point analysis established that the critical-point structure of the dielectric function was the same for all samples. This result suggested that the observed sample-to-sample variations were due to macroscopic roughness, which scatters off-specular light into the detector, thereby causing errors. We introduced tentative corrections for off-specular reflection that fitted the observed differences and thus supported the idea that off-specular reflection was responsible for the observed differences. These results were obtained using CdTe but are easily extensible to other rough opaque materials

The effect of excitons on CdTe solar cells

International Nuclear Information System (INIS)

Karazhanov, S. Zh.; Zhang, Y.; Mascarenhas, A.; Deb, S.

2000-01-01

Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥10 15 cm -3 . From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. (c) 2000 American Institute of Physics

Photostimulated changes of properties of CdTe films

Energy Technology Data Exchange (ETDEWEB)

Dzhafarov, T.D. [Institute of Physics, Azerbaijan National Academy of Sciences, AZ-1143 Baku (Azerbaijan); Yesilkaya, S.S. [Department of Physics, Yildiz Technical University, 34210 Esenler/Istanbul (Turkey)

2007-08-15

The effect of illumination during the close-spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells were investigated. Data on comparative study by using X-ray diffraction (XRD), scanning electron microscopy (SEM), absorption spectra and conductivity-temperature measurements of CdTe films prepared by CSS method in dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate and the grain size of CdTe films grown under illumination is higher (by factor about of 1.5 and 3 respectively) than those for films prepared without illumination. The energy band gap of CdTe films fabricated by both technology, determined from absorption spectra, is same (about of 1.50 eV), however conductivity of the CdTe films produced by CSSI is considerably greater (by factor of 10{sup 7}) than that of films prepared by CSSD. The photovoltaic parameters of pCdTe/nCdS solar cells fabricated by photostimulated CSSI technology (J{sub sc}=28 mA/cm{sup 2}, V{sub oc}=0.63 V) are considerably larger than those for cells prepared by CSSD method (J{sub sc}=22 mA/cm{sup 2}, V{sub oc}=0.52 V). A mechanism of photostimulated changes of properties of CdTe films and improvement of photovoltaic parameters of CdTe/CdS solar cells is suggested. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

Science.gov (United States)

Lay-Ekuakille, A; Arnesano, A; Vergallo, P

2013-01-01

Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

Fast detector for triggering on charged particle multiplicity for relativistic nucleus-nucleus collisions

International Nuclear Information System (INIS)

Agakishiev, G.; Man'yakov, P.K.; Drees, A.

1997-01-01

The simple and fast detector of charged particle multiplicity for relativistic nucleus-nucleus collision studies is performed. The multiplicity detector has been designed for the first level trigger of the CERES/NA45 experiment to study Pb-Au collisions at CERN SPS energies. The detector has allowed a realization of the 40 ns trigger for selection of events with definite impact parameter. The construction, operation characteristics, method of calibration, and testing results are described in detail

Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

Energy Technology Data Exchange (ETDEWEB)

Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

2006-07-01

CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

Radiative and interfacial recombination in CdTe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

2014-12-01

Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

A fast event preprocessor for the Simbol-X Low-Energy Detector

Science.gov (United States)

Schanz, T.; Tenzer, C.; Kendziorra, E.; Santangelo, A.

2008-07-01

The Simbol-X1 Low Energy Detector (LED), a 128 × 128 pixel DEPFET array, will be read out very fast (8000 frames/second). This requires a very fast onboard data preprocessing of the raw data. We present an FPGA based Event Preprocessor (EPP) which can fulfill this requirements. The design is developed in the hardware description language VHDL and can be later ported on an ASIC technology. The EPP performs a pixel related offset correction and can apply different energy thresholds to each pixel of the frame. It also provides a line related common-mode correction to reduce noise that is unavoidably caused by the analog readout chip of the DEPFET. An integrated pattern detector can block all invalid pixel patterns. The EPP has an internal pipeline structure and can perform all operation in realtime (< 2 μs per line of 64 pixel) with a base clock frequency of 100 MHz. It is utilizing a fast median-value detection algorithm for common-mode correction and a new pattern scanning algorithm to select only valid events. Both new algorithms were developed during the last year at our institute.

He-4 fast neutron detectors in nuclear security applications

International Nuclear Information System (INIS)

Murer, D. E.

2014-01-01

This work presents studies of "4He fast neutron detectors for nuclear security applications. Such devices are high pressure gas scintillation detectors, sensitive to neutrons in the energy range of fission sources. First, an introduction to the scope of the intended application is given. This is followed by a description of all components relevant to the operation of the detector. The next chapter presents studies of various characteristics of the neutron detector, among them properties of its scintillation response, differences between neutron and gamma interactions and effects of the light collection process. The results of the detector characterization are used to develop neutron gamma discrimination methods. These methods are put to the test using measurements with a high gamma flux, and the results are compared to performance requirements of Radiation Portal Monitors. Background neutron measurements are presented next. Measured neutron rates are compared to values published in scientific literature. The fluctuation of the background count rate was studied, and the contribution of muons evaluated. Two applications of the detectors in the field of nuclear security are discussed in the last two chapters. The first one is a novel method to measure the plutonium mass in a container filled with Mixed Oxide Fuel. The last chapter presents the development of a Radiation Portal Monitor which, in addition to neutron and gamma counting, exploits time correlation to detect threats such as plutonium and "6"0Co. (author)

He-4 fast neutron detectors in nuclear security applications

Energy Technology Data Exchange (ETDEWEB)

Murer, D. E.

2014-07-01

This work presents studies of {sup 4}He fast neutron detectors for nuclear security applications. Such devices are high pressure gas scintillation detectors, sensitive to neutrons in the energy range of fission sources. First, an introduction to the scope of the intended application is given. This is followed by a description of all components relevant to the operation of the detector. The next chapter presents studies of various characteristics of the neutron detector, among them properties of its scintillation response, differences between neutron and gamma interactions and effects of the light collection process. The results of the detector characterization are used to develop neutron gamma discrimination methods. These methods are put to the test using measurements with a high gamma flux, and the results are compared to performance requirements of Radiation Portal Monitors. Background neutron measurements are presented next. Measured neutron rates are compared to values published in scientific literature. The fluctuation of the background count rate was studied, and the contribution of muons evaluated. Two applications of the detectors in the field of nuclear security are discussed in the last two chapters. The first one is a novel method to measure the plutonium mass in a container filled with Mixed Oxide Fuel. The last chapter presents the development of a Radiation Portal Monitor which, in addition to neutron and gamma counting, exploits time correlation to detect threats such as plutonium and {sup 60}Co. (author)

A fast readout system for scintillation detectors

International Nuclear Information System (INIS)

Steijger, J.; Kok, E.; Kwakkel, E.; Visschers, J.L.; Zwart, A.N.M.

1991-01-01

A system of fast readout electronics for segmented scintillation detectors has been constructed and is now operational. Instead of delaying the analog signals in long coaxial cables, they are digitized immediately and stored in dual-port memories, while the trigger decision is being made. A VMEbus system collects the data from these memories on the data acquisition modules within one crate. Several VME crates are connected via a transputer network to transport the data to an event builder. A separate transputer network is used to perform the VME cycles, needed for the computer-controlled tuning of the experiment. (orig.)

A fast method for optical simulation of flood maps of light-sharing detector modules

International Nuclear Information System (INIS)

Shi, Han; Du, Dong; Xu, JianFeng; Moses, William W.; Peng, Qiyu

2015-01-01

Optical simulation of the detector module level is highly desired for Position Emission Tomography (PET) system design. Commonly used simulation toolkits such as GATE are not efficient in the optical simulation of detector modules with complicated light-sharing configurations, where a vast amount of photons need to be tracked. We present a fast approach based on a simplified specular reflectance model and a structured light-tracking algorithm to speed up the photon tracking in detector modules constructed with polished finish and specular reflector materials. We simulated conventional block detector designs with different slotted light guide patterns using the new approach and compared the outcomes with those from GATE simulations. While the two approaches generated comparable flood maps, the new approach was more than 200–600 times faster. The new approach has also been validated by constructing a prototype detector and comparing the simulated flood map with the experimental flood map. The experimental flood map has nearly uniformly distributed spots similar to those in the simulated flood map. In conclusion, the new approach provides a fast and reliable simulation tool for assisting in the development of light-sharing-based detector modules with a polished surface finish and using specular reflector materials.

Calibration of the hard x-ray detectors for the FOXSI solar sounding rocket

Science.gov (United States)

Athiray, P. S.; Buitrago-Casas, Juan Camilo; Bergstedt, Kendra; Vievering, Juliana; Musset, Sophie; Ishikawa, Shin-nosuke; Glesener, Lindsay; Takahashi, Tadayuki; Watanabe, Shin; Courtade, Sasha; Christe, Steven; Krucker, Säm.; Goetz, Keith; Monson, Steven

2017-08-01

The Focusing Optics X-ray Solar Imager (FOXSI) sounding rocket experiment conducts direct imaging and spectral observation of the Sun in hard X-rays, in the energy range 4 to 20 keV. These high-sensitivity observations are used to study particle acceleration and coronal heating. FOXSI is designed with seven grazing incidence optics modules that focus X-rays onto seven focal plane detectors kept at a 2m distance. FOXSI-1 was flown with seven Double-sided Si Strip Detectors (DSSD), and two of them were replaced with CdTe detectors for FOXSI-2. The upcoming FOXSI-3 flight will carry DSSD and CdTe detectors with upgraded optics for enhanced sensitivity. The detectors are calibrated using various radioactive sources. The detector's spectral response matrix was constructed with diagonal elements using a Gaussian approximation with a spread (sigma) that accounts for the energy resolution of the detector. Spectroscopic studies of past FOXSI flight data suggest that the inclusion of lower energy X-rays could better constrain the spectral modeling to yield a more precise temperature estimation of the hot plasma. This motivates us to carry out an improved calibration to better understand the finer-order effects on the spectral response, especially at lower energies. Here we report our improved calibration of FOXSI detectors using experiments and Monte-Carlo simulations.

Se-Se isoelectronic centers in high purity CdTe

Energy Technology Data Exchange (ETDEWEB)

Najjar, Rita; Andre, Regis; Mariette, Henri [CEA-CNRS, Nanophysique et Semiconducteurs, Institut Neel, 25 rue des martyrs, 38042 Grenoble (France); Golnik, Andrzej; Kossacki, Piotr; Gaj, Jan A. [Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland)

2010-06-15

We evidence zero-dimensional exciton states trapped on isoelectronic Se centers in CdTe quantum wells, {delta}-doped with Se. Thanks to special precautions taken to have very high purity CdTe heterostructures, it is possible to observe, in photoluminescence spectra, sharp discrete lines arising from individual centers related to the Se doping. These emission lines appear at about 40 meV below the CdTe band gap energy. The most prominent lines are attributed to the recombination of excitons bound to nearest-neighbor selenium pairs in a tetrahedral CdTe environment. This assignment is confirmed by a common linear polarization direction of the emitted light, parallel to <110>. These excitons localized on individual isoelectronic traps are good candidates as single photon emitters (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Calibration and Simulation of the GRB trigger detector of the Ultra Fast Flash Observatory

DEFF Research Database (Denmark)

Huang, M.-H.A.; Ahmad, S.; Barrillon, P.

2013-01-01

The UFFO (Ultra-Fast Flash Observatory) is a GRB detector on board the Lomonosov satellite, to be launched in 2013. The GRB trigger is provided by an X-ray detector, called UBAT (UFFO Burst Alarm & Trigger Telescope), which detects X-rays from the GRB and then triggers to determine the direction ...

Influence of EDTA2− on the hydrothermal synthesis of CdTe nanocrystallites

International Nuclear Information System (INIS)

Gong Haibo; Hao Xiaopeng; Wu Yongzhong; Cao Bingqiang; Xu Hongyan; Xu Xiangang

2011-01-01

Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd 2+ . Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA 2− . Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: ► EDTA serves as a strong ligand with Cd 2+ . ► The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. ► With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. ► Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

Science.gov (United States)

Dhere, Neelkanth G.

1997-03-01

Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

Measurements of Charge Sharing Effects in Pixilated CZT/CdTe Detectors

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl

2007-01-01

In this paper, charge sharing and charge loss effects in pixilated CZT/CdTe detectors are investigated by measurements. We measured charge sharing effects function of the inter-pixel gap (with same pixel pitch), the photon energy and the detector bias voltage for a large numbers of CZT and Cd......Te pixel detector samples. The results are used for the development of the large area X-ray and Gamma ray detector for the Atmosphere-Space Interactions Monitor (ASIM) planned for the ISS ESA Columbus module. Charge sharing measurements on detector samples with identical size and pixel geometry...

X-ray Peltier cooled detectors for X-ray fluorescence analysis

International Nuclear Information System (INIS)

Loupilov, A.; Sokolov, A.; Gostilo, V.

2001-01-01

The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i-n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1.) Si(Li) detectors: S=20 mm 2 , thickness=3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S=100 mm 2 ; thickness=4.5 mm, 270 eV (5.9 keV), 485 eV (59.6 keV). (2.) Si-planar detector: S=10 mm 2 , thickness=0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3.) CdTe p-i-n detectors: S=16 mm 2 , thickness=0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S=16 mm 2 , thickness=1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, cryminalistics and history of art are demonstrated

X-ray Peltier cooled detectors for X-ray fluorescence analysis

International Nuclear Information System (INIS)

Loupilov, A.; Sokolov, A.; Gostilo, V.

2000-01-01

The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i- n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1) Si(Li) detectors: S = 20 mm 2 , thickness = 3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S = 100 mm 2 ; thickness = 4.5 mm, 270 eV (5.9 keV), 485 eV (59,6 keV). (2) Si-planar detector: S = 10 mm 2 , thickness = 0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3) CdTe p-i-n detectors: S = 16 mm 2 , thickness 0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S = 16 mm 2 , thickness = 1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, criminalistics and history of art are demonstrated. (author)

Fast current amplifier for background-limited operation of photovoltaic InSb detectors

Energy Technology Data Exchange (ETDEWEB)

Altmann, J; Koehler, S; Lahmann, W

1981-01-01

A fast current amplifier for use with photovoltaic indium antimonide detectors is described which was designed for detection of lidar return signals. Near background-limited operation was possible for bandwidths up to 0.8 MHz.

Removal of CdTe in acidic media by magnetic ion-exchange resin: A potential recycling methodology for cadmium telluride photovoltaic waste

Energy Technology Data Exchange (ETDEWEB)

Zhang, Teng, E-mail: zhangteng@mail.iee.ac.cn; Dong, Zebin; Qu, Fei; Ding, Fazhu; Peng, Xingyu; Wang, Hongyan; Gu, Hongwei

2014-08-30

Highlights: • Sulfonated magnetic microsphere was prepared as one strong acid cation-exchange resin. • Cd and Te can be removed directly from the highly acidic leaching solution of CdTe. • Good chemical stability, fast adsorbing rate and quick magnetic separation in strong acidic media. • A potential path for recycling CdTe photovoltaic waste. - Abstract: Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste.

Energy deposition measurements in fast reactor safety experiments with fission thermocouple detectors

International Nuclear Information System (INIS)

Wright, S.A.; Scott, H.L.

1979-01-01

The investigation of phenomena occurring in in-pile fast reactor safety experiments requires an accurate measurement of the time dependent energy depositions within the fissile material. At Sandia Laboratories thin-film fission thermocouples are being developed for this purpose. These detectors have high temperature capabilities (400 to 500 0 C), are sodium compatible, and have milli-second time response. A significant advantage of these detectors for use as energy deposition monitors is that they produce an output voltage which is directly dependent on the temperature of a small chip of fissile material within the detectors. However, heat losses within the detector make it necessary to correct the response of the detector to determine the energy deposition. A method of correcting the detector response which uses an inverse convolution procedure has been developed and successfully tested with experimental data obtained in the Sandia Pulse Reactor (SPR-II) and in the Annular Core Research Reactor

The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique

International Nuclear Information System (INIS)

Jany, Ch.

1998-01-01

The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead η to decrease. In contrast, η was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp 2 phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

Band structure of CdTe under high pressure

International Nuclear Information System (INIS)

Jayam, Sr. Gerardin; Nirmala Louis, C.; Amalraj, A.

2005-01-01

The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (P M = 1.935 Mbar) and the corresponding reduced volume ((V/V 0 ) M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)

Recent progress in infrared detector technologies

Science.gov (United States)

Rogalski, A.

2011-05-01

In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VO x) or amorphous silicon (α-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement. Attractive alternatives consist of low-resistance α-SiGe monocrystalline SiGe quantum wells or quantum dots. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in MEMS systems have lead to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

Interface properties of MIS structures based on hetero-epitaxial graded-gap Hg1-xCdxTe with CdTe interlayer created in situ during MBE growth

Science.gov (United States)

Voitsekhovskii, Alexander V.; Nesmelov, Sergey N.; Dzyadukh, Stanislav M.; Varavin, Vasily S.; Dvoretsky, Sergey A.; Mikhailov, Nikolay N.; Yakushev, Maksim V.; Sidorov, Georgy Yu.

2017-11-01

Heterostructures based on n-Hg1-xCdxTe (x = 0.23-0.40) with near-surface graded-gap layers were grown by molecular beam epitaxy on Si (013) substrates. At 77 K, the admittance of the In/Al2O3/Hg1-xCdxTe metal-insulator-semiconductor (MIS) structures with grown in situ CdTe intermediate layer and without such a layer was investigated. It has been established that MIS structures of In/Al2O3/Hg1-xCdxTe with an interlayer of in situ grown CdTe are characterized by the electrical strength of the dielectric and the qualitative interface. The hysteresis of the capacitive characteristics is practically absent within a small range of variation in the bias voltage. The density of fast surface states at the minimum does not exceed 2.2 × 1010 eV-1 cm-2. MIS structures of In/Al2O3/Hg1-xCdxTe without an intermediate layer of CdTe have significantly higher densities of fast and slow surface states, as well as lower values of the differential resistance of the space-charge region in the regime of strong inversion.

A novel detector assembly for detecting thermal neutrons, fast neutrons and gamma rays

Energy Technology Data Exchange (ETDEWEB)

Cester, D., E-mail: davide.cester@gmail.com [Dipartimento di Fisica ed Astronomia dell' Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Lunardon, M.; Moretto, S. [Dipartimento di Fisica ed Astronomia dell' Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN Sezione di Padova, Via Marzolo 8, I-35131 Padova (Italy); Nebbia, G. [INFN Sezione di Padova, Via Marzolo 8, I-35131 Padova (Italy); Pino, F. [Dipartimento di Fisica ed Astronomia dell' Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Sajo-Bohus, L. [Dipartimento di Fisica ed Astronomia dell' Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Laboratorio de Fisica Nuclear, Universidad Simon Bolivar, Apartado 89000, 1080 A Caracas (Venezuela, Bolivarian Republic of); Stevanato, L.; Bonesso, I.; Turato, F. [Dipartimento di Fisica ed Astronomia dell' Università di Padova, Via Marzolo 8, I-35131 Padova (Italy)

2016-09-11

A new composite detector has been developed by combining two different commercial scintillators. The device has the capability to detect gamma rays as well as thermal and fast neutrons; the signal discrimination between the three types is performed on-line by means of waveform digitizers and PSD algorithms. This work describes the assembled detector and its discrimination performance to be employed in the applied field.

A novel detector assembly for detecting thermal neutrons, fast neutrons and gamma rays

International Nuclear Information System (INIS)

Cester, D.; Lunardon, M.; Moretto, S.; Nebbia, G.; Pino, F.; Sajo-Bohus, L.; Stevanato, L.; Bonesso, I.; Turato, F.

2016-01-01

A new composite detector has been developed by combining two different commercial scintillators. The device has the capability to detect gamma rays as well as thermal and fast neutrons; the signal discrimination between the three types is performed on-line by means of waveform digitizers and PSD algorithms. This work describes the assembled detector and its discrimination performance to be employed in the applied field.

Synthesis and characterization of CdTe quantum dots by one-step method

Directory of Open Access Journals (Sweden)

H. Li

2013-09-01

Full Text Available L-Cysteine (Cys-capped CdTe quantum dots (QDs were prepared when sodium tellurite worked as a tellurium source and sodium borohydride acted as a reductant. The influences of various experimental variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the photoluminescence (PL quantum yield (QY of the obtained CdTe QDs have been systematically investigated. Experimental results indicated that green to red emitting CdTe QDs with maximum quantum yield of 19.4% can be prepared at pH 11.5 and n(Cd2+:n(Te2−:n(Cys = 1:0.07:2.0. X-Ray powder diffraction (XRD and transmission electron microscopy (TEM were used to characterize the crystal structure and shape of CdTe QDs. The results showed that the prepared CdTe QDs were of cubic zinc blend crystal structure in a sphere-like shape.DOI: http://dx.doi.org/10.4314/bcse.v27i3.7

Radiometric and dosimetric characteristics of HgI2 detectors

International Nuclear Information System (INIS)

Zaletin, V.M.; Krivozubov, O.V.; Torlin, M.A.; Fomin, V.I.

1988-01-01

The characteristics of HgI 2 detectors in x-ray and gamma detection in applications to radiometric and dosimetric monitoring and as portable instruments for such purposes was considered. Blocks with mosaic and sandwich structures were prepared and tested against each other and, for comparative purposes, against CdTe detectors for relative sensitivities at various gamma-quanta energies. Sensitivity dependencies on gamma radiation energy were plotted for the detector materials and structures as were current dependencies on the dose rate of x rays. Results indicated that the mercury iodide detectors could be used in radiometric and dosimetric measurements at gamma quantum energies up to and in excess of 1000 KeV

Spin dynamics in bulk CdTe at room temperature

International Nuclear Information System (INIS)

Nahalkova, P.; Nemec, P.; Sprinzl, D.; Belas, E.; Horodysky, P.; Franc, J.; Hlidek, P.; Maly, P.

2006-01-01

In this paper, we report on the room temperature dynamics of spin-polarized carriers in undoped bulk CdTe. Platelets of CdTe with different concentration of preparation-induced dislocations were prepared by combining the mechanical polishing and chemical etching. Using the polarization-resolved pump-probe experiment in transmission geometry, we have observed a systematic decrease of both the signal polarization and the electron spin dephasing time (from 52 to 36 ps) with the increased concentration of defects. We have suggested that the Elliot-Yafet mechanism might be the dominant spin dephasing mechanism in platelets of CdTe at room temperature

A facile route to shape controlled CdTe nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R. [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa); Revaprasadu, Neerish, E-mail: nrevapra@pan.uzulu.ac.za [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa)

2011-04-15

Research highlights: {yields} A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. {yields} This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. {yields} The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

A facile route to shape controlled CdTe nanoparticles

International Nuclear Information System (INIS)

Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R.; Revaprasadu, Neerish

2011-01-01

Research highlights: → A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. → This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. → The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

HgCdTe photovoltaic detectors on Si substrates

International Nuclear Information System (INIS)

Zanio, K.R.; Bean, R.C.

1988-01-01

HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents unintentional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered. 40 references

A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

Energy Technology Data Exchange (ETDEWEB)

Lee, Youngjin, E-mail: radioyoungj@gmail.com [Department of Radiological Science, Eulji University, 553, Sanseong-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do (Korea, Republic of); Lee, Amy Candy [Department of Mathematics and Statistics, McGill University (Canada); Kim, Hee-Joung [Department of Radiological Science and Radiation Convergence Engineering, Yonsei University (Korea, Republic of)

2016-09-11

Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

The High Energy Detector of Simbol-X

Science.gov (United States)

Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Le Mer, I.; Pinsard, F.; Cara, C.; Goetschy, A.; Martignac, J.; Tauzin, G.; Hervé, S.; Laurent, P.; Chipaux, R.; Rio, Y.; Fontignie, J.; Horeau, B.; Authier, M.; Ferrando, P.

2009-05-01

The High Energy Detector (HED) is one of the three detection units on board the Simbol-X detector spacecraft. It is placed below the Low Energy Detector so as to collect focused photons in the energy range from 8 to 80 keV. It consists of a mosaic of 64 independent cameras, divided in 8 sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique component. The status of the HED design will be reported. The promising results obtained from the first micro-camera prototypes called Caliste 64 and Caliste 256 will be presented to illustrate the expected performance of the instrument.

The High Energy Detector of Simbol-X

International Nuclear Information System (INIS)

Meuris, A.; Limousin, O.; Blondel, C.; Le Mer, I.; Pinsard, F.; Cara, C.; Goetschy, A.; Martignac, J.; Laurent, P.; Chipaux, R.; Rio, Y.; Fontignie, J.; Horeau, B.; Ferrando, P.; Lugiez, F.; Gevin, O.; Tauzin, G.; Herve, S.; Authier, M.

2009-01-01

The High Energy Detector (HED) is one of the three detection units on board the Simbol-X detector spacecraft. It is placed below the Low Energy Detector so as to collect focused photons in the energy range from 8 to 80 keV. It consists of a mosaic of 64 independent cameras, divided in 8 sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique component. The status of the HED design will be reported. The promising results obtained from the first micro-camera prototypes called Caliste 64 and Caliste 256 will be presented to illustrate the expected performance of the instrument.

A pixel design for X-ray imaging with CdTe sensors

Energy Technology Data Exchange (ETDEWEB)

Lambropoulos, C.P.; Zervakis, E.G. [Technological Educational Institute of Halkis, Psahna - Evia (Greece); Loukas, D. [Institute of Nuclear Physics, NCSR Demokritos, Agia Paraskevi - Attiki (Greece)

2008-07-01

A readout architecture appropriate for X-ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100{mu}m x 100 {mu}m CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A pixel design for X-ray imaging with CdTe sensors

International Nuclear Information System (INIS)

Lambropoulos, C.P.; Zervakis, E.G.; Loukas, D.

2008-01-01

A readout architecture appropriate for X-ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100μm x 100 μm CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Interaction and energy transfer studies between bovine serum albumin and CdTe quantum dots conjugates: CdTe QDs as energy acceptor probes.

Science.gov (United States)

Kotresh, M G; Inamdar, L S; Shivkumar, M A; Adarsh, K S; Jagatap, B N; Mulimani, B G; Advirao, G M; Inamdar, S R

2017-06-01

In this paper, a systematic investigation of the interaction of bovine serum albumin (BSA) with water-soluble CdTe quantum dots (QDs) of two different sizes capped with carboxylic thiols is presented based on steady-state and time-resolved fluorescence measurements. Efficient Förster resonance energy transfer (FRET) was observed to occur from BSA donor to CdTe acceptor as noted from reduction in the fluorescence of BSA and enhanced fluorescence from CdTe QDs. FRET parameters such as Förster distance, spectral overlap integral, FRET rate constant and efficiency were determined. The quenching of BSA fluorescence in aqueous solution observed in the presence of CdTe QDs infers that fluorescence resonance energy transfer is primarily responsible for the quenching phenomenon. Bimolecular quenching constant (k q ) determined at different temperatures and the time-resolved fluorescence data provide additional evidence for this. The binding stoichiometry and various thermodynamic parameters are evaluated by using the van 't Hoff equation. The analysis of the results suggests that the interaction between BSA and CdTe QDs is entropy driven and hydrophobic forces play a key role in the interaction. Binding of QDs significantly shortened the fluorescence lifetime of BSA which is one of the hallmarks of FRET. The effect of size of the QDs on the FRET parameters are discussed in the light of FRET parameters obtained. Copyright © 2016 John Wiley & Sons, Ltd.

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

Energy Technology Data Exchange (ETDEWEB)

Ricq, St

1999-09-28

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

[Oxidative damage effects induced by CdTe quantum dots in mice].

Science.gov (United States)

Xie, G Y; Chen, W; Wang, Q K; Cheng, X R; Xu, J N; Huang, P L

2017-07-20

Objective: To investigate Oxidative damage effects induced by CdTe Quantum Dots (QDs) in mice. Methods: 40 ICR mice were randomly divided into 5 groups: one control group (normal saline) ; four CdTe QDs (exposed by intravenous injection of 0.2 ml of CdTe QDs at the concentration of 0、0.5、5.0、50.0 and 500.0 nmol/ml respectively) . After 24 h, the mice were decapitated and the blood was collected for serum biochemically indexes、hematology indexes, the activities of SOD、GSH-Px and the concentration of MDA were all detected. Results: The results showed in the four CdTe QDs exposure groups, the level of CRE、PLT and the concentration of MDA were all significantly lower than those of the control group ( P control group ( P <0.01) . Conclusion: It was suggested that CdTe QDs at 0.5 nmol/ml could induce Oxidative damage effects in mice.

Fast neutron detection by means of an organic solid state track detector

International Nuclear Information System (INIS)

Doerschel, B.; Streubel, G.

1980-01-01

Solid state track detectors consisting of cellulose triacetate foils are appropriate for measuring the fast neutron fluence without applying external radiators. Detector sensitivity has been determined as a function of neutron energy by performing irradiations with various neutron sources and monoenergetic neutrons of different energies. A comparison with theoretical results given in the literature for a simple model of track recording has shown sufficient agreement. The measuring errors and the influence of spectral changes in the neutron field on detector response are discussed for the studied method of fluence measurement. By means of these errors the measuring range has been determined for well defined irradiation conditions, taking into account spectral changes in the neutron field. (author)

Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

International Nuclear Information System (INIS)

Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong

2015-01-01

Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd 2+ . Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals

Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging

Energy Technology Data Exchange (ETDEWEB)

Onodera, T. E-mail: tosiyuki@smail.tohtech.ac.jp; Hitomi, K.; Shoji, T.; Hiratate, Y

2004-06-01

Recently, pixellated semiconductor detectors exhibit high-energy resolution, which have been studied actively and fabricated from CdTe, CZT and HgI{sub 2}. Thallium bromide (TlBr) is a compound semiconductor characterized with its high atomic numbers (Tl=81, Br=35) and high density (7.56 g/cm{sup 3}). Thus, TlBr exhibits higher photon stopping power than other semiconductor materials used for radiation detector fabrication such as CdTe, CZT and HgI{sub 2}. The wide band gap of TlBr (2.68 eV) permits the detectors low-noise operation at around room temperature. Our studies made an effort to fabricate pixellated TlBr detectors had sufficient detection efficiency and good charge collection efficiency. In this study, pixellated TlBr detectors were fabricated from the crystals purified by the multipass zone-refining method and grown by the horizontal traveling molten zone (TMZ) method. The TlBr detector has a continuous cathode over one crystal surface and 3x3 pixellated anodes (0.57x0.57 mm{sup 2} each) surrounded by a guard ring on the opposite surface. The electrodes were realized by vacuum evaporation of palladium through a shadow mask. Typical thickness of the detector was 2 mm. Spectrometric performance of the TlBr detectors was tested by irradiating them with {sup 241}Am (59.5 keV), {sup 57}Co (122 keV) and {sup 137}Cs (662 keV) gamma-ray sources at temperature of -20 deg. C. Energy resolutions (FWHM) were measured to be 4.0, 6.0 and 9.7 keV for 59.5, 122 and 662 keV gamma-rays, respectively.

The sensitivity calibration of the ultra-fast quench plastic scintillation detector for D-T neutrons

International Nuclear Information System (INIS)

Tang Changhuan; Yan Meiqiong; Xie Chaomei

1998-01-01

The authors introduce some characteristics of ultra-fast quench plastic scintillation detectors. When the detectors are composed of different scintillators, light guides and microchannel plate photomultiplier tube (MCP-PMT), their sensitivities to D-T neutrons are calibrated by a pulse neutron tube with a neutron pulse width about 10 ns

Stilbene crystalline powder in polymer base as a new fast neutron detector

International Nuclear Information System (INIS)

Budakovsky, S.V.; Galunov, N.Z.; Grinyov, B.V.; Karavaeva, N.L.; Kyung Kim, Jong; Kim, Yong-Kyun; Pogorelova, N.V.; Tarasenko, O.A.

2007-01-01

A new organic scintillation material consisting of stilbene grains in a polymer glue base is presented. The crystalline grains of stilbene are obtained by mechanical grinding of stilbene single crystals. The resulting composite scintillators have been studied as detectors for fast neutrons

The ''Flight Chamber'': A fast, large area, zero-time detector

International Nuclear Information System (INIS)

Trautner, N.

1976-01-01

A new, fast, zero-time detector with an active area of 20 cm 2 has been constructed. Secondary electrons from a thin self-supporting foil are accelerated onto a scinitllator. The intrinsic time resolution (fwhm) was 0.85 for 5.5 MeV α-particles and 0.42 ns for 17 MeV 16 O-ions, at an efficiency of 97.5% and 99.6%, respectively. (author)

Ultra-fast HPM detectors improve NAD(P)H FLIM

Science.gov (United States)

Becker, Wolfgang; Wetzker, Cornelia; Benda, Aleš

2018-02-01

Metabolic imaging by NAD(P)H FLIM requires the decay functions in the individual pixels to be resolved into the decay components of bound and unbound NAD(P)H. Metabolic information is contained in the lifetime and relative amplitudes of the components. The separation of the decay components and the accuracy of the amplitudes and lifetimes improves substantially by using ultra-fast HPM-100-06 and HPM-100-07 hybrid detectors. The IRF width in combination with the Becker & Hickl SPC-150N and SPC-150NX TCSPC modules is less than 20 ps. An IRF this fast does not interfere with the fluorescence decay. The usual deconvolution process in the data analysis then virtually becomes a simple curve fitting, and the parameters of the NAD(P)H decay components are obtained at unprecedented accuracy.

Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

Energy Technology Data Exchange (ETDEWEB)

Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta [Panjab University, Department of Physics, Center of Advanced Study in Physics, Chandigarh (India)

2014-10-25

This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

International Nuclear Information System (INIS)

Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta

2015-01-01

This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

Performance of semiconductor radiation sensors for simple and low-cost radiation detector

International Nuclear Information System (INIS)

Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

2008-01-01

In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

Spent Nuclear Fuel Cask and Storage Monitoring with {sup 4}He Scintillation Fast Neutron Detectors

Energy Technology Data Exchange (ETDEWEB)

Chung, Hee jun; Kelley, Ryan P; Jordan, Kelly A [Univ. of Florida, Florida (United States); Lee, Wanno [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Chung, Yong Hyun [Yonsei Univ., Wonju (Korea, Republic of)

2014-10-15

With this increasing quantity of spent nuclear fuel being stored at nuclear plants across S. Korea, the demand exists for building a long-term disposal facility. However, the Korean government first requires a detailed plan for the monitoring and certification of spent fuel. Several techniques have been developed and applied for the purpose of spent fuel monitoring, including the digital Cerenkov viewing device (DCVD), spent fuel attribute tester (SFAT), and FORK detector. Conventional gamma measurement methods, however, suffer from a lack of nuclear data and interfering background radiation. To date, the primary method of neutron detection for spent fuel monitoring has been through the use of thermal neutron detectors such as {sup 3}He and BF{sub 3} proportional counters. Unfolding the neutron spectrum becomes extremely complicated. In an attempt to overcome these difficulties, a new fast neutron measurement system is currently being developed at the University of Florida. This system is based on the {sup 4}He scintillation detector invented by Arktis Radiation Detectors Ltd. These detectors are a relatively new technological development and take advantage of the high {sup 4}He cross-section for elastic scattering at fast neutron energies, particularly the resonance around 1 MeV. This novel {sup 4}He scintillation neutron detector is characterized by its low electron density, leading to excellent gamma rejection. This detector also has a fast response time on the order of nanoseconds and most importantly, preserves some neutron energy information since no moderator is required. Additionally, these detectors rely on naturally abundant {sup 4}He as the fill gas. This study proposes a new technique using the neutron spectroscopy features of {sup 4}He scintillation detectors to maintain accountability of spent fuel in storage. This research will support spent fuel safeguards and the detection of fissile material, in order to minimize the risk of nuclear proliferation

CdTe hybrid pixel detector for imaging with thermal neutrons

Czech Academy of Sciences Publication Activity Database

Jakůbek, J.; Mettivier, G.; Montesi, M.C.; Pospíšil, S.; Russo, P.; Vacík, Jiří

2006-01-01

Roč. 563, č. 1 (2006), s. 238-241 ISSN 0168-9002 R&D Pro jects: GA MŠk 1P04LA211 Institutional research plan: CEZ:AV0Z10480505 Keywords : neutronography * pixel detector * semiconductor detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.185, year: 2006

Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong, E-mail: dayongw@seu.edu.cn

2015-02-11

Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd{sup 2+}. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

Energy Technology Data Exchange (ETDEWEB)

Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

2010-04-15

A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

International Nuclear Information System (INIS)

Accorsi, R.; Autiero, M.; Celentano, L.

2007-01-01

We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256x256 matrix of 55 μm square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. 125 I, 27-35 keV, 99m Tc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 μm at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor

Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code

International Nuclear Information System (INIS)

Sedlakova, K.; Sagatova, A.; Necas, V.; Zatko, B.

2013-01-01

The potential of silicon carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. The wide bandgap of SiC (3.25 eV for 4H-SiC polytype) compared to that for more conventionally used semiconductors, such as silicon (1.12 eV) and germanium (0.67 eV), makes SiC an attractive semiconductor for use in high dose rate and high ionization nuclear environments. The present work focused on the simulation of particle transport in SiC detectors of fast neutrons using statistical analysis of Monte Carlo radiation transport code MCNPX. Its possibilities in detector design and optimization are presented.(authors)

Fast neutron dosimetry using CR-39 track detectors with polyethylene as radiator

International Nuclear Information System (INIS)

Castillo, F.; Espinosa, G.; Golzarri, J.I.; Osorio, D.; Rangel, J.; Reyes, P.G.; Herrera, J.J.E.

2013-01-01

The chemical etching parameters (etching time, temperature, normality of etchant, etc.) for the use of CR-39 (allyl diglycol carbonate – Lantrack ® ) as a fast neutron dosimeter have been optimized. The CR-39 chips, placed under a 1.5 mm polyethylene radiator, were exposed for calibration to an 241 Am-Be source at different time intervals for a given neutron fluence. After several chemical etching processes of the detectors with different conditions, the optimum characteristics for the chemical etching were found at 6N KOH solution, 60 ± 1 °C, for 12 h. An accurate relationship between the dose and fluence calculations was obtained as a function of the track density. - Highlights: ► Optimum etching time for fast neutron irradiated CR-39 track detectors is found. ► Relationship between dose and fluence obtained as a function of the track density. ► Results are consistent with those reported elsewhere, and extend the dose range

CdTe and related compounds: physics, defects, hetero- and nano-structures, crystal growth, surfaces and applications

CERN Document Server

Triboulet, Robert

Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful.

Fast digitization and discrimination of prompt neutron and photon signals using a novel silicon carbide detector

International Nuclear Information System (INIS)

Brandon W. Blackburn; James T. Johnson; Scott M. Watson; David L. Chichester; James L. Jones; Frank H. Ruddy; John G. Seidel; Robert W. Flammang

2007-01-01

Current requirements of some Homeland Security active interrogation projects for the detection of Special Nuclear Material (SNM) necessitate the development of faster inspection and acquisition capabilities. In order to do so, fast detectors which can operate during and shortly after intense interrogation radiation flashes are being developed. Novel silicon carbide (SiC) semiconductor Schottky diodes have been utilized as robust neutron and photon detectors in both pulsed photon and pulsed neutron fields and are being integrated into active inspection environments to allow exploitation of both prompt and delayed emissions. These detectors have demonstrated the capability of detecting both photon and neutron events during intense photon flashes typical of an active inspection environment. Beyond the inherent insensitivity of SiC to gamma radiation, fast digitization and processing has demonstrated that pulse shape discrimination (PSD) in combination with amplitude discrimination can further suppress unwanted gamma signals and extract fast neutron signatures. Usable neutron signals have been extracted from mixed radiation fields where the background has exceeded the signals of interest by >1000:1

Numerical study of the particle transport in fast neutron detectors with conversion layer

International Nuclear Information System (INIS)

Sedlackova, K.; Zatko, B.; Necas, V.

2012-01-01

This paper deals with fast neutron and recoil proton transport simulation using statistical analysis of Monte Carlo radiation transport code (MCNPX). Its possibilities in the detector design and optimization are presented. MCNPX proved as a very advantageous self-contained simulation program for fast neutron and secondary proton tracking. Simulations of respective particle transport through conversion layer of HDPE and further in the active volume of detector let us to follow important characteristics as neutron/proton flux density, reaction rate of elastic scattering on hydrogen nuclei and deposited energy as well as their dependencies on incident neutron energy and conversion layer/active region thickness. The efficiency of neutrons to protons conversion has been calculated and its maximum was reached for 500 μm thick conversion layer. The minimum active region thickness has been estimated to be about 300 μm.(authors)

R and D on a New Technology of Micro-pattern Gaseous Detectors Fast Timing Micro-pattern Detector

CERN Document Server

Salva Diblen, Sinem

2016-01-01

After the upgrades of the Large Hadron Collider (LHC) planned for the second and the third Long Shutdown (LS), the LHC luminosity will approach very high values. Such conditions will affect the performance of the CMS muon system, especially in the very forward region, due to the harsh expected background environment and high pile-up conditions. The CMS collaboration considers upgrading the muon forward region to take advantage of the pixel tracking coverage extension a new detector, ME0 station, possibly behind the new forward calorimeter. New resistive micro-pattern gaseous detectors that are able to handle the very demanding spatial, time resolution and rate capability, are being considered. In this contribution we introduce a new type of MPGD technology the Fast Timing Micro-pattern (FTM) detector, utilizing a fully resistive WELL structure. It consists of a stack of several coupled layers where drift and WELL multiplication stages alternate in the structure, yielding a significant improvement in timing p...

A Fast Event Preprocessor and Sequencer for the Simbol-X Low Energy Detector

Science.gov (United States)

Schanz, T.; Tenzer, C.; Maier, D.; Kendziorra, E.; Santangelo, A.

2009-05-01

The Simbol-X Low Energy Detector (LED), a 128×128 pixel DEPFET (Depleted Field Effect Transistor) array, will be read out at a very high rate (8000 frames/second) and, therefore, requires a very fast on board electronics. We present an FPGA-based LED camera electronics consisting of an Event Preprocessor (EPP) for on board data preprocessing and filtering of the Simbol-X low-energy detector and a related Sequencer (SEQ) to generate the necessary signals to control the readout.

A Fast Event Preprocessor and Sequencer for the Simbol-X Low Energy Detector

International Nuclear Information System (INIS)

Schanz, T.; Tenzer, C.; Maier, D.; Kendziorra, E.; Santangelo, A.

2009-01-01

The Simbol-X Low Energy Detector (LED), a 128x128 pixel DEPFET (Depleted Field Effect Transistor) array, will be read out at a very high rate (8000 frames/second) and, therefore, requires a very fast on board electronics. We present an FPGA-based LED camera electronics consisting of an Event Preprocessor (EPP) for on board data preprocessing and filtering of the Simbol-X low-energy detector and a related Sequencer (SEQ) to generate the necessary signals to control the readout.

Development of Small-Pixel CZT Detectors for Future High-Resolution Hard X-ray Missions

Science.gov (United States)

Beilicke, Matthias

Owing to recent breakthroughs in grazing incidence mirror technology, next-generation hard X-ray telescopes will achieve angular resolutions of between 5 and 10 arc seconds - about an order of magnitude better than that of the NuSTAR hard X-ray telescope. As a consequence, the next generation of hard X-ray telescopes will require pixelated hard X- ray detectors with pixels on a grid with a lattice constant of between 120 and 240 um. Additional detector requirements include a low energy threshold of less than 5 keV and an energy resolution of less than 1 keV. The science drivers for a high angular-resolution hard X-ray mission include studies and measurements of black hole spins, the cosmic evolution of super-massive black holes, AGN feedback, and the behavior of matter at very high densities. We propose a R&D research program to develop, optimize and study the performance of 100-200 um pixel pitch CdTe and Cadmium Zinc Telluride (CZT) detectors of 1-2 mm thickness. Our program aims at a comparison of the performance achieved with CdTe and CZT detectors, and the optimization of the pixel, steering grid, and guard ring anode patterns. Although these studies will use existing ASICs (Application Specific Integrated Circuits), our program also includes modest funds for the development of an ultra-low noise ASIC with a 2-D grid of readout pads that can be directly bonded to the 100-200 um pixel pitch CdTe and CZT detectors. The team includes the Washington University group (Prof. M. Beilicke and Co-I Prof. H.S.W. Krawczynski et al.), and co-investigator G. De Geronimo at Brookhaven National Laboratory (BNL). The Washington University group has a 10 year track record of innovative CZT detector R&D sponsored by the NASA Astronomy and Physics Research and Analysis (APRA) program. The accomplishments to date include the development of CZT detectors with pixel pitches between 350 um and 2.5 mm for the ProtoExist, EXIST, and X-Calibur hard X-ray missions with some of the best

RHEED studies of MBE growth mechanisms of CdTe and CdMnTe

Energy Technology Data Exchange (ETDEWEB)

Waag, A.; Behr, T.; Litz, T.; Kuhn-Heinrich, B.; Hommel, D.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

1993-01-30

We report on reflection high energy electron diffraction (RHEED) studies of molecular beam epitaxy (MBE) growth of CdTe and CdMnTe on (100) oriented CdTe substrates. RHEED oscillations were measured for both the growth and desorption of CdTe and CdMnTe as a function of flux and temperature. For the first time, the influence of laser and electron irradiation on the growth rate, as well as desorption, of CdTe is studied in detail using RHEED oscillations. We found a very small effect on the growth rate as well as on the CdTe desorption rate. The growth rate of CdTe was determined for different temperatures and CdTe flux ratios. The obtained experimental results are compared with a kinetic growth model to get information on the underlying growth processes, taking into account the influence of a precursor by including surface diffusion. From the comparison between model and experimental results the sticking coefficients of Cd and Te are determined. The growth rate of CdMnTe increases with Mn flux. This dependence can be used to calibrate the Mn content during growth by comparing the growth rate of CdTe with the growth rate of CdMnTe. The change in growth rate has been correlated with Mn content via photoluminescence measurements. In addition, the sticking coefficient of Mn is derived by comparing experimental results with a kinetic growth model. For high manganese content a transition to three-dimensional growth occurs. (orig.).

Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole

Science.gov (United States)

Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

2015-04-01

Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL-1 (3.4 ng mL-1) and the quantitative determination range was 0-2.8 μg mL-1 with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

Physical and optical properties of size-selective CdTe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Fok, Alice [Department of Chemistry, The City College of New York, CUNY New York, NY 10031 (United States); Morales, Jorge [Department of Biology, City College of New York, CUNY New York, NY 10031 (United States); Sohel, Mohammad [Natural Sciences Department, Hostos College, CUNY Bronx, NY 10451 (United States)

2010-06-15

Physical and optical properties of colloidal cadmium telluride nanocrystals (CdTe NCs) were investigated. The CdTe NCs were synthesized by reacting elemental tellurium dissolved in tributylphosphine with a mixture of cadmium oxide, octadecene, and oleic acid. These NCs, which were characterized by transmission electron microscopy (TEM) are spherical and ranged from 5 to 7 nm in diameter. The identity of the compound post-synthesis was confirmed by X-Ray diffraction (XRD) patterns. UV-Vis and photoluminescence (PL) properties as grown and pure CdTe samples were investigated. Bright excitonic photoluminescence emission was observed (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The influence of fast neutron irradiation on the noise properties of silicon surface-barrier detectors

International Nuclear Information System (INIS)

Dabrowski, W.; Korbel, K.

1988-01-01

The susceptibility to the fast neutron irradiation of silicon surface-barrier detectors has been investigated. It was shown that the 1/f-noise decreases substantially with increasing fluence in the range from 10 10 n/cm 2 to 10 11 n/cm 2 . The deterioration of the detector performance is caused mainly by the positively-charged defects induced by the radiation. The critical value of the neutron fluence, at which the detector performance begins to be worsened was also determined. 5 refs., 5 figs. (author)

A basic component for ISGRI, the CdTe gamma camera on board the INTEGRAL satellite

International Nuclear Information System (INIS)

Arques, M.; Baffert, N.; Lattard, D.

1999-01-01

A basic component, called Polycell, has been developed for the ISGRI (INTEGRAL Soft Gamma Ray Imager) CdTe camera on board the INTEGRAL (INTErnational Gamma-Ray Astrophysics Laboratory) satellite. Operating at room temperature, it covers the 20 keV--1 MeV energy range. It features a sub-ensemble of 16 CdTe detectors and their associated front end electronics. This electronics is based on 4-channel analog-digital ASICs. Their analog part features a low noise preamplifier, allowing a threshold below 20 keV and a pulse rise-time measurement which permits a charge loss correction. The digital part ensures the internal acquisition timing sequence as well as the dialogue with external electronics. Two versions of the ISGRI ASIC have been developed in a collaboration of two CEA microelectronics teams from CEA/DTA/LETI/DSYS and CEA/DSM/DAPNIA/SEI, respectively on a standard CMOS AMS process hardened against radiation by lay-out, and on a Silicon On Insulator process (DMILL MHS), the latter being latch-up free. This paper presents the ASIC and polycell architecture as well as experimental results obtained with polycells equipped with AMS ASICs

Diamond detectors for high energy physics experiments

Science.gov (United States)

Bäni, L.; Alexopoulos, A.; Artuso, M.; Bachmair, F.; Bartosik, M.; Beacham, J.; Beck, H.; Bellini, V.; Belyaev, V.; Bentele, B.; Berdermann, E.; Bergonzo, P.; Bes, A.; Brom, J.-M.; Bruzzi, M.; Cerv, M.; Chiodini, G.; Chren, D.; Cindro, V.; Claus, G.; Collot, J.; Cumalat, J.; Dabrowski, A.; D'Alessandro, R.; Dauvergne, D.; de Boer, W.; Dorfer, C.; Dünser, M.; Eremin, V.; Eusebi, R.; Forcolin, G.; Forneris, J.; Frais-Kölbl, H.; Gallin-Martel, L.; Gallin-Martel, M. L.; Gan, K. K.; Gastal, M.; Giroletti, C.; Goffe, M.; Goldstein, J.; Golubev, A.; Gorišek, A.; Grigoriev, E.; Grosse-Knetter, J.; Grummer, A.; Gui, B.; Guthoff, M.; Haughton, I.; Hiti, B.; Hits, D.; Hoeferkamp, M.; Hofmann, T.; Hosslet, J.; Hostachy, J.-Y.; Hügging, F.; Hutton, C.; Jansen, H.; Janssen, J.; Kagan, H.; Kanxheri, K.; Kasieczka, G.; Kass, R.; Kassel, F.; Kis, M.; Konovalov, V.; Kramberger, G.; Kuleshov, S.; Lacoste, A.; Lagomarsino, S.; Lo Giudice, A.; Lukosi, E.; Maazouzi, C.; Mandic, I.; Mathieu, C.; Menichelli, M.; Mikuž, M.; Morozzi, A.; Moss, J.; Mountain, R.; Murphy, S.; Muškinja, M.; Oh, A.; Oliviero, P.; Passeri, D.; Pernegger, H.; Perrino, R.; Picollo, F.; Pomorski, M.; Potenza, R.; Quadt, A.; Re, A.; Reichmann, M.; Riley, G.; Roe, S.; Sanz, D.; Scaringella, M.; Schaefer, D.; Schmidt, C. J.; Schnetzer, S.; Sciortino, S.; Scorzoni, A.; Seidel, S.; Servoli, L.; Smith, S.; Sopko, B.; Sopko, V.; Spagnolo, S.; Spanier, S.; Stenson, K.; Stone, R.; Sutera, C.; Tannenwald, B.; Taylor, A.; Traeger, M.; Tromson, D.; Trischuk, W.; Tuve, C.; Uplegger, L.; Velthuis, J.; Venturi, N.; Vittone, E.; Wagner, S.; Wallny, R.; Wang, J. C.; Weingarten, J.; Weiss, C.; Wengler, T.; Wermes, N.; Yamouni, M.; Zavrtanik, M.

2018-01-01

Beam test results of the radiation tolerance study of chemical vapour deposition (CVD) diamond against different particle species and energies is presented. We also present beam test results on the independence of signal size on incident particle rate in charged particle detectors based on un-irradiated and irradiated poly-crystalline CVD diamond over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2. The pulse height of the sensors was measured with readout electronics with a peaking time of 6 ns. In addition functionality of poly-crystalline CVD diamond 3D devices was demonstrated in beam tests and 3D diamond detectors are shown to be a promising technology for applications in future high luminosity experiments.

CdTe Based Hard X-ray Imager Technology For Space Borne Missions

Science.gov (United States)

Limousin, Olivier; Delagnes, E.; Laurent, P.; Lugiez, F.; Gevin, O.; Meuris, A.

2009-01-01

CEA Saclay has recently developed an innovative technology for CdTe based Pixelated Hard X-Ray Imagers with high spectral performance and high timing resolution for efficient background rejection when the camera is coupled to an active veto shield. This development has been done in a R&D program supported by CNES (French National Space Agency) and has been optimized towards the Simbol-X mission requirements. In the latter telescope, the hard X-Ray imager is 64 cm² and is equipped with 625µm pitch pixels (16384 independent channels) operating at -40°C in the range of 4 to 80 keV. The camera we demonstrate in this paper consists of a mosaic of 64 independent cameras, divided in 8 independent sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique 1 cm² component, juxtaposable on its four sides. Recently, promising results have been obtained from the first micro-camera prototypes called Caliste 64 and will be presented to illustrate the capabilities of the device as well as the expected performance of an instrument based on it. The modular design of Caliste enables to consider extended developments toward IXO type mission, according to its specific scientific requirements.

Detector Motion Method to Increase Spatial Resolution in Photon-Counting Detectors

Energy Technology Data Exchange (ETDEWEB)

Lee, Daehee; Park, Kyeongjin; Lim, Kyung Taek; Cho, Gyuseong [Korea Advanced Institute of Science and Technology, Daejon (Korea, Republic of)

2017-03-15

Medical imaging requires high spatial resolution of an image to identify fine lesions. Photoncounting detectors in medical imaging have recently been rapidly replacing energy-integrating detectors due to the former's high spatial resolution, high efficiency and low noise. Spatial resolution in a photon counting image is determined by the pixel size. Therefore, the smaller the pixel size, the higher the spatial resolution that can be obtained in an image. However, detector redesigning is required to reduce pixel size, and an expensive fine process is required to integrate a signal processing unit with reduced pixel size. Furthermore, as the pixel size decreases, charge sharing severely deteriorates spatial resolution. To increase spatial resolution, we propose a detector motion method using a large pixel detector that is less affected by charge sharing. To verify the proposed method, we utilized a UNO-XRI photon-counting detector (1-mm CdTe, Timepix chip) at the maximum X-ray tube voltage of 80 kVp. A similar spatial resolution of a 55-μm-pixel image was achieved by application of the proposed method to a 110-μm-pixel detector with a higher signal-to-noise ratio. The proposed method could be a way to increase spatial resolution without a pixel redesign when pixels severely suffer from charge sharing as pixel size is reduced.

Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

2014-11-12

CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

Recent Results from Beam Tests of 3D and Pad pCVD Diamond Detectors

CERN Document Server

Wallny, Rainer

2017-01-01

Results from prototypes of a detector using chemical vapor deposited (CVD) diamond with embedded resistive electrodes in the bulk forming a 3D diamond device are presented. A detector system consisting of 3D devices based on poly-crystalline CVD (pCVD) diamond was connected to a multi-channel readout and successfully tested in a 120 GeV/c proton beam at CERN proving for the first time the feasibility of the 3D detector concept in pCVD for particle tracking applications. We also present beam test results on the dependence of signal size on incident particle rate in charged particle detectors based on poly-crystalline CVD diamond. The detectors were tested in a 260 MeV/c pion beam over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2 . The pulse height of the sensors was measured with pad readout electronics at a peaking time of 7 ns. Our data from the 2015 beam tests at PSI indicate that the pulse height of poly-crystalline CVD diamond sensor irradiated to 5×1014 neq/cm2 is independent of particle flux...

TFTR alpha extraction and measurement: Development and testing of advanced alpha detectors: Final report

International Nuclear Information System (INIS)

Wehring, B.W.

1988-01-01

Advanced alpha-particle detectors made of heavy elements were investigated as alternatives to silicon surface-barrier detectors for the ''foil-neutralization technique'' of alpha-particle diagnostics in fusion reactors with high neutron backgrounds. From an extensive literature review, it was decided that HgI 2 would make a more suitable detector for alpha-particle diagnostics than other heavy element detectors such as CdTe. Thus, HgI 2 detectors were designed and fabricated. Experimental tests were performed to determine detector characteristics and detector responses to alpha particles. Radiation noise measurements were also performed using the North Carolina State University PULSTAR nuclear reactor for both the HgI 2 detectors and commercial Si(Au) surface barrier detectors. 15 refs., 1 fig

Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques

Energy Technology Data Exchange (ETDEWEB)

Roumie, M. E-mail: mroumie@cnrs.edu.lb; Hageali, M.; Zahraman, K.; Nsouli, B.; Younes, G

2004-06-01

Rutherford backscattering spectrometry (RBS) was applied to characterize Au, Pt and Pd contacts on II-VI semiconductor materials, CdTe and ZnTe, used as nuclear detectors. Electroless thin film depositions were prepared by changing the concentration of the reaction solution. Contrary to the deposition reaction time, it was observed that the amount of solution dilution degree had a considerable effect on increasing the thickness of the metal layer. Furthermore, PICTS electrical measurements confirmed the depth profile analysis performed by RBS and SIMS.

Comparative study of new 130mm diameter fast photomultipliers for neutron detectors

International Nuclear Information System (INIS)

Moszynski, M.; Costa, G.J.; Guillaume, G.; Heusch, B.; Huck, A.; Mouatassim, S.

1991-01-01

The present paper is a summary of the test measurements carried out using new 130 mm diameter fast photomultiplier tubes manufactured by Philips (France), EMI (England) and Hamamatsu (Japan), along with a comparison to the results obtained with the well known XP 2041 Philips model. These tubes will be used in large size neutron detectors

Fast CMOS binary front-end for silicon strip detectors at LHC experiments

CERN Document Server

Kaplon, Jan

2004-01-01

We present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance preamplifier working with an active feedback loop, two stages of the amplifier-integrator circuits providing 22 ns peaking time and two-stage differential discriminator. Particular effort has been made to minimize the current and the power consumption of the preamplifier, while keeping the required noise and timing performance. For a detector capacitance of 20 pF noise below 1500 e/sup -/ ENC has been achieved for 300 mu A bias current in the input transistor, which is comparable with levels achieved in the past for a front-end using bipolar input transistor. The total supply current of the front-end is 600 mu A and the power dissipation is 1.5 mW per channel. The offset spread of the comparator is below 3 mV rms.

A fast high-voltage current-peak detection system for the ALICE transition radiation detector

Energy Technology Data Exchange (ETDEWEB)

Verclas, Robert [Physikalisches Institut, Ruprecht-Karls-Universitaet Heidelberg (Germany); Collaboration: ALICE-Collaboration

2016-07-01

During LHC operation in run 1, the gaseous detectors of ALICE occasionally experienced simultaneous trips in their high voltage which affected the majority of the high voltage channels. These trips are caused by large anode currents in the detector and are potentially related to LHC machine operations. We developed and installed a fast current-peak detection system for the ALICE Transition Radiation Detector. This system is based on FPGA technology and monitors 144 out 522 high voltage channels minimally invasively at a maximum readout rate of 2 MHz. It is an integral part of the LHC beam monitoring system. We report on the latest status.

Scintillator based detector for fast-ion losses induced by magnetohydrodynamic instabilities in the ASDEX upgrade tokamak.

Science.gov (United States)

García-Muñoz, M; Fahrbach, H-U; Zohm, H

2009-05-01

A scintillator based detector for fast-ion losses has been designed and installed on the ASDEX upgrade (AUG) tokamak [A. Herrmann and O. Gruber, Fusion Sci. Technol. 44, 569 (2003)]. The detector resolves in time the energy and pitch angle of fast-ion losses induced by magnetohydrodynamics (MHD) fluctuations. The use of a novel scintillator material with a very short decay time and high quantum efficiency allows to identify the MHD fluctuations responsible for the ion losses through Fourier analysis. A Faraday cup (secondary scintillator plate) has been embedded behind the scintillator plate for an absolute calibration of the detector. The detector is mounted on a manipulator to vary its radial position with respect to the plasma. A thermocouple on the inner side of the graphite protection enables the safety search for the most adequate radial position. To align the scintillator light pattern with the light detectors a system composed by a lens and a vacuum-compatible halogen lamp has been allocated within the detector head. In this paper, the design of the scintillator probe, as well as the new technique used to analyze the data through spectrograms will be described. A last section is devoted to discuss the diagnosis prospects of this method for ITER [M. Shimada et al., Nucl. Fusion 47, S1 (2007)].

Precision timing detectors with cadmium-telluride sensor

Science.gov (United States)

Bornheim, A.; Pena, C.; Spiropulu, M.; Xie, S.; Zhang, Z.

2017-09-01

Precision timing detectors for high energy physics experiments with temporal resolutions of a few 10 ps are of pivotal importance to master the challenges posed by the highest energy particle accelerators such as the LHC. Calorimetric timing measurements have been a focus of recent research, enabled by exploiting the temporal coherence of electromagnetic showers. Scintillating crystals with high light yield as well as silicon sensors are viable sensitive materials for sampling calorimeters. Silicon sensors have very high efficiency for charged particles. However, their sensitivity to photons, which comprise a large fraction of the electromagnetic shower, is limited. To enhance the efficiency of detecting photons, materials with higher atomic numbers than silicon are preferable. In this paper we present test beam measurements with a Cadmium-Telluride (CdTe) sensor as the active element of a secondary emission calorimeter with focus on the timing performance of the detector. A Schottky type CdTe sensor with an active area of 1cm2 and a thickness of 1 mm is used in an arrangement with tungsten and lead absorbers. Measurements are performed with electron beams in the energy range from 2 GeV to 200 GeV. A timing resolution of 20 ps is achieved under the best conditions.

The mirror symmetric centroid difference method for picosecond lifetime measurements via {gamma}-{gamma} coincidences using very fast LaBr{sub 3}(Ce) scintillator detectors

Energy Technology Data Exchange (ETDEWEB)

Regis, J.-M., E-mail: regis@ikp.uni-koeln.d [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Koeln (Germany); Pascovici, G.; Jolie, J.; Rudigier, M. [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Koeln (Germany)

2010-10-01

The ultra-fast timing technique was introduced in the 1980s and is capable of measuring picosecond lifetimes of nuclear excited states with about 3 ps accuracy. Very fast scintillator detectors are connected to an electronic timing circuit and detector vs. detector time spectra are analyzed by means of the centroid shift method. The very good 3% energy resolution of the nowadays available LaBr{sub 3}(Ce) scintillator detectors for {gamma}-rays has made possible an extension of the well-established fast timing technique. The energy dependent fast timing characteristics or the prompt curve, respectively, of the LaBr{sub 3}(Ce) scintillator detector has been measured using a standard {sup 152}Eu {gamma}-ray source. For any energy combination in the range of 200keVfast timing characteristics is calibrated as a function of energy with an accuracy of 2-4 ps. An extension of the centroid shift method providing very attractive features for picosecond lifetime measurements is presented. The mirror symmetric centroid difference method takes advantage of the symmetry obtained when performing {gamma}-{gamma} lifetime measurements using a pair of almost identical very fast scintillator detectors. In particular cases, the use of the mirror symmetric centroid difference method also allows the direct determination of picosecond lifetimes, hence without the need of calibrating the prompt curve.

Comparison of three types of XPAD3.2/CdTe single chip hybrids for hard X-ray applications in material science and biomedical imaging

Energy Technology Data Exchange (ETDEWEB)

Buton, C., E-mail: clement.buton@synchrotron-soleil.fr [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Dawiec, A. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Graber-Bolis, J.; Arnaud, K. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Bérar, J.F.; Blanc, N.; Boudet, N. [Université Grenoble Alpes, Institut NÉEL, F-38042 Grenoble (France); CNRS, Institut NÉEL, F-38042 Grenoble (France); Clémens, J.C.; Debarbieux, F. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Delpierre, P.; Dinkespiler, B. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Gastaldi, T. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Hustache, S. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Morel, C.; Pangaud, P. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Perez-Ponce, H. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Vigeolas, E. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France)

2014-09-11

The CHIPSPECT consortium aims at building a large multi-modules CdTe based photon counting detector for hard X-ray applications. For this purpose, we tested nine XPAD3.2 single chip hybrids in various configurations (i.e. Ohmic vs. Schottky contacts or electrons vs. holes collection mode) in order to select the most performing and best suited configuration for our experimental requirements. Measurements have been done using both X-ray synchrotron beams and {sup 241}Am source. Preliminary results on the image quality, calibration, stability, homogeneity and linearity of the different types of detectors are presented.

A directional fast neutron detector using scintillating fibers and an intensified CCD camera system

International Nuclear Information System (INIS)

Holslin, Daniel; Armstrong, A.W.; Hagan, William; Shreve, David; Smith, Scott

1994-01-01

We have been developing and testing a scintillating fiber detector (SFD) for use as a fast neutron sensor which can discriminate against neutrons entering at angles non-parallel to the fiber axis (''directionality''). The detector/convertor component is a fiber bundle constructed of plastic scintillating fibers each measuring 10 cm long and either 0.3 mm or 0.5 mm in diameter. Extensive Monte Carlo simulations were made to optimize the bundle response to a range of fast neutron energies and to intense fluxes of high energy gamma-rays. The bundle is coupled to a set of gamma-ray insenitive electro-optic intensifiers whose output is viewed by a CCD camera directly coupled to the intensifiers. Two types of CCD cameras were utilized: 1) a standard, interline RS-170 camera with electronic shuttering and 2) a high-speed (up to 850 frame/s) field-transfer camera. Measurements of the neutron detection efficiency and directionality were made using 14 MeV neutrons, and the response to gamma-rays was performed using intense fluxes from radioisotopic sources (up to 20 R/h). Recently, the detector was constructed and tested using a large 10 cm by 10 cm square fiber bundle coupled to a 10 cm diameter GEN I intensifier tube. We present a description of the various detector systems and report the results of experimental tests. ((orig.))

Preparation of bioconjugates of CdTe nanocrystals for cancer marker detection

International Nuclear Information System (INIS)

Hu Fengqin; Ran Yuliang; Zhou Zhuan; Gao Mingyuan

2006-01-01

Highly fluorescent CdTe quantum dots (Q-dots) stabilized by 3-mercaptopropionic acid (MPA) were prepared by an aqueous solution approach and used as fluorescent labels in detecting a cancer marker, carcinoembryonic antigen (CEA), expressed on human colon carcinoma cell line LS 180. Nonspecific adsorptions of CdTe Q-dots on carcinoma cells were observed and effectively eliminated by replacing MPA with a thiolated PEG (poly(ethylene glycol), Mn = 750) synthesized according to literature. It was unexpectedly found out that the PEG-coated CdTe Q-dots exhibited very strong and specific affinity to anti-CEA monoclonal antibody rch 24 (rch 24 mAb). The resultant CdTe-(rch 24 mAb) conjugates were successfully used in detections of CEA expressed on the surface of cell line LS 180. Further experiments demonstrated that the fluorescent CdTe Q-dots exhibited much better photostability and a brighter fluorescence than FITC, which consequently led to a higher efficiency in the cancer marker detection

Recent developments and applications of fast position-sensitive gas detectors

International Nuclear Information System (INIS)

Sauli, Fabio

1999-01-01

The introduction, 30 years ago, of the multiwire proportional chamber initiated a very active and fruitful period of development of fast gas detectors. Performing position-sensitive devices have been perfected, for the needs of elementary particle physics and for applications in medical diagnostics, biology, material analysis. The high rate performance of wire counters, limited by positive ions accumulation, was largely improved with the introduction of the micro-strip gas chamber, capable of achieving position accuracies of few tens of microns at radiation fluxes exceeding 1 MHz/mm 2 . The micro-strip chamber properties have been extensively studied in view of large scale use in high luminosity experiments; some interesting applications in other fields will be described here. Originally conceived as a gain booster to solve reliability problems met with micro-strips, the gas electron multiplier was invented about a year and a half ago. Progress made with high gain models is leading to a new concept in gas detectors, powerful yet cheap and reliable. Possible developments and applications will be discussed: large area position-sensitive photo detectors and X-ray imagers, including devices with non-planar geometry suited to spectrometers and crystal diffraction studies

Fabrication of radiation detector using PbI2 crystals

International Nuclear Information System (INIS)

Shoji, T.; Ohba, K.; Suehiro, T.; Hiratate, Y.

1995-01-01

Radiation detectors have been fabricated from lead iodide (PbI 2 ) crystals grown by two methods: zone melting and Bridgman methods. In response characteristics of the detector fabricated from crystals grown by the zone melting method, a photopeak for γ-rays from an 241 Am source (59.5 KeV) has been clearly observed with applied detector bias of 500 V at room temperature. The hole drift mobility is estimated to be about 5.5 cm 2 /Vs from measurement of pulse rise time for 5.48 MeV α-rays from 241 Am. By comparing the detector bias versus saturated peak position of the PbI 2 detector with that of CdTe detector, the average energy for producing electron-hole pairs is estimated to be about 8.4 eV for the PbI 2 crystal. A radiation detector fabricated from PbI 2 crystals grown by the Bridgman method, however, exhibited no response for γ-rays

Application of energy dispersive X-ray spectrometers with semiconductor detectors in radiometric analyses

International Nuclear Information System (INIS)

Jugelt, P.; Schieckel, M.

1983-01-01

Problems and possibilities of applying semiconductor detector spectrometers in radiometric analyses are described. A summary of the state of the art and tendencies of device engineering and spectra evaluation is given. Liquid-nitrogen cooled Li-drifted Si-detectors and high-purity Ge-detectors are compared. Semiconductor detectors working at room temperature are under development. In this connection CdTe and HgI 2 semiconductor detectors are compared. The use of small efficient computers in the spectrometer systems stimulates the development of algorithms for spectra analyses and for determining the concentration. Fields of application of energy dispersive X-ray spectrometers are X-ray diffraction and X-ray macroanalysis in investigating the structure of extensive surface regions

Elsevier R&D on a new type of micropattern gaseous detector: The Fast Timing Micropattern detector

CERN Document Server

Abbaneo, D; Abbrescia, M; Abi Akl, M; Aboamer, O; Acosta, D; Ahmad, A; Ahmed, W; Aleksandrov, A; Altieri, P; Asawatangtrakuldee, C; Aspell, P; Assran, Y; Awan, I; Bally, S; Ban, Y; Banerjee, S; Barashko, V; Barria, P; Bencze, G; Beni, N; Benussi, L; Bhopatkar, V; Bianco, S; Bos, J; Bouhali, O; Braghieri, A; Braibant, S; Buontempo, S; Calabria, C; Caponero, M; Caputo, C; Cassese, F; Castaneda, A; Cauwenbergh, S; Cavallo, F R; Celik, A; Choi, M; Choi, S; Christiansen, J; Cimmino, A; Colafranceschi, S; Colaleo, A; Conde Garcia, A; Czellar, S; Dabrowski, M M; De Lentdecker, G; Oliveira, R De; De Robertis, G; Dildick, S; Dorney, B; Endroczi, G; Errico, F; Fallavollita, F; Fenyvesi, A; Ferry, S; Furic, I; Giacomelli, P; Gilmore, J; Golovtsov, V; Guiducci, L; Guilloux, F; Gutierrez, A; Hadjiiska, R M; Hauser, J; Hoepfner, K; Hohlmann, M; Hoorani, H; Iaydjiev, P; Jeng, Y G; Kamon, T; Karchin, P; Korytov, A; Krutelyov, S; Kumar, A; Kim, H; Lee, J; Lenzi, T; Litov, L; Loddo, F; Madorsky, A; Maerschalk, T; Maggi, M; Magnani, A; Mal, P K; Mandal, K; Marchioro, A; Marinov, A; Majumdar, N; Merlin, J A; Mitselmakher, G; Mohanty, A K; Mohapatra, A; Molnar, J; Muhammad, S; Mukhopadhyay, S; Naimuddin, M; Nuzzo, S; Oliveri, E; Pant, L M; Paolucci, P; Park, I; Passeggio, G; Pavlov, B; Philipps, B; Piccolo, D; Postema, H; Puig Baranac, A; Radi, A; Radogna, R; Raffone, G; Ranieri, A; Rashevski, G; Ressegotti, M; Riccardi, C; Rodozov, M; Rodrigues, A; Ropelewski, L; RoyChowdhury, S; Ryu, G; Ryu, M S; Safonov, A; Salva, S; Saviano, G; Sharma, A; Sharma, A; Sharma, R; Shah, A H; Shopova, M; Sturdy, J; Sultanov, G; Swain, S K; Szillasi, Z; Talvitie, J; Tatarinov, A; Tuuva, T; Tytgat, M; Vai, I; Van Stenis, M; Venditti, R; Verhagen, E; Verwilligen, P; Vitulo, P; Volkov, S; Vorobyev, A; Wang, D; Wang, M; Yang, U; Yang, Y; Yonamine, R; Zaganidis, N; Zenoni, F; Zhang, A

2017-01-01

Micropattern gaseous detectors (MPGD) underwent significant upgrades in recent years, introducing resistive materials to build compact spark-protected devices. Exploiting this technology further, various features such as space and time resolution, rate capability, sensitive area, operational stability and radiation hardness can be improved. This contribution introduces a new type of MPGD, namely the Fast Timing Micropattern (FTM) detector, utilizing a fully resistive WELL structure. It consists of a stack of several coupled layers where drift and WELL multiplication stages alternate in the structure, yielding a significant improvement in timing properties due to competing ionization processes in the different drift regions. Two FTM prototypes have been developed so far. The first one is uWELL-like, where multiplication takes place in the holes of a kapton foil covered on both sides with resistive material. The second one has a resistive Micromegas-like structure, with multiplication developing in a region del...

Alpha particle response study of polycrstalline diamond radiation detector

Energy Technology Data Exchange (ETDEWEB)

Kumar, Amit; Topkar, Anita [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

2016-05-23

Chemical vapor deposition has opened the possibility to grow high purity synthetic diamond at relatively low cost. This has opened up uses of diamond based detectors for wide range of applications. These detectors are most suitable for harsh environments where standard semiconductor detectors cannot work. In this paper, we present the fabrication details and performance study of polycrystalline diamond based radiation detector. Effect of different operating parameters such as bias voltage and shaping time for charge collection on the performance of detector has been studied.

One-step synthesis of CdTe branched nanowires and nanorod arrays

International Nuclear Information System (INIS)

Hou Junwei; Yang Xiuchun; Lv Xiaoyi; Peng Dengfeng; Huang Min; Wang Qingyao

2011-01-01

Single crystalline CdTe branched nanowires and well-aligned nanorod arrays were simultaneously synthesized by a simple chemical vapor deposition (CVD) technique. X-ray diffraction (XRD), scanning electronic microscopy (SEM), transmission electronic microscopy (TEM) and selected area electronic diffraction (SAED) were used to study the crystalline structure, composition and morphology of different samples. Vapor-liquid-solid (VLS) and vapor-solid (VS) processes were proposed for the formation of the CdTe branched nanowires and nanorod arrays, respectively. As-grown CdTe nanorod arrays show a strong red emission band centered at about 620 nm, which can be well fitted by two Gaussian curves centered at 610 nm and 635 nm, respectively.

Recent Advances in Diamond Detectors

CERN Document Server

Trischuk, W.

2008-01-01

With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2012, ATLAS and CMS are planning for detector upgrades for their innermost layers requiring radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is now planned for all LHC experiments. This material is now being considered as an alternate sensor for use very close to the interaction region of the super LHC where the most extreme radiation conditions will exist. Recently the RD42 collaboration constructed, irradiated and tested polycrystalline and single-crystal chemical vapor deposition diamond sensors to the highest fluences available. We present beam test results of chemical vapor deposition diamond up to fluences of 1.8 x 10^16 protons/cm^2 showing that both polycrystalline and single-crystal chemical vapor deposition diamonds follow a single damage curve allowing one t...

Studying nanotoxic effects of CdTe quantum dots in Trypanosoma cruzi

Directory of Open Access Journals (Sweden)

Cecilia Stahl Vieira

2011-03-01

Full Text Available Semiconductor nanoparticles, such as quantum dots (QDs, were used to carry out experiments in vivo and ex vivo with Trypanosoma cruzi. However, questions have been raised regarding the nanotoxicity of QDs in living cells, microorganisms, tissues and whole animals. The objective of this paper was to conduct a QD nanotoxicity study on living T. cruzi protozoa using analytical methods. This was accomplished using in vitro experiments to test the interference of the QDs on parasite development, morphology and viability. Our results show that after 72 h, a 200 μM cadmium telluride (CdTe QD solution induced important morphological alterations in T. cruzi, such as DNA damage, plasma membrane blebbing and mitochondrial swelling. Flow cytometry assays showed no damage to the plasma membrane when incubated with 200 μM CdTe QDs for up to 72 h (propidium iodide cells, giving no evidence of classical necrosis. Parasites incubated with 2 μM CdTe QDs still proliferated after seven days. In summary, a low concentration of CdTe QDs (2 μM is optimal for bioimaging, whereas a high concentration (200 μM CdTe could be toxic to cells. Taken together, our data indicate that 2 μM QD can be used for the successful long-term study of the parasite-vector interaction in real time.

Fission signal detection using helium-4 gas fast neutron scintillation detectors

Energy Technology Data Exchange (ETDEWEB)

Lewis, J. M., E-mail: lewisj@ufl.edu; Kelley, R. P.; Jordan, K. A. [Nuclear Engineering Program, University of Florida, Gainesville, Florida 32611 (United States); Murer, D. [Arktis Radiation Detectors Ltd., 8045 Zurich (Switzerland)

2014-07-07

We demonstrate the unambiguous detection of the fission neutron signal produced in natural uranium during active neutron interrogation using a deuterium-deuterium fusion neutron generator and a high pressure {sup 4}He gas fast neutron scintillation detector. The energy deposition by individual neutrons is quantified, and energy discrimination is used to differentiate the induced fission neutrons from the mono-energetic interrogation neutrons. The detector can discriminate between different incident neutron energies using pulse height discrimination of the slow scintillation component of the elastic scattering interaction between a neutron and the {sup 4}He atom. Energy histograms resulting from this data show the buildup of a detected fission neutron signal at higher energies. The detector is shown here to detect a unique fission neutron signal from a natural uranium sample during active interrogation with a (d, d) neutron generator. This signal path has a direct application to the detection of shielded nuclear material in cargo and air containers. It allows for continuous interrogation and detection while greatly minimizing the potential for false alarms.

Detector-device-independent quantum key distribution: Security analysis and fast implementation

International Nuclear Information System (INIS)

Boaron, Alberto; Korzh, Boris; Boso, Gianluca; Martin, Anthony; Zbinden, Hugo; Houlmann, Raphael; Lim, Charles Ci Wen

2016-01-01

One of the most pressing issues in quantum key distribution (QKD) is the problem of detector side-channel attacks. To overcome this problem, researchers proposed an elegant “time-reversal” QKD protocol called measurement-device-independent QKD (MDI-QKD), which is based on time-reversed entanglement swapping. However, MDI-QKD is more challenging to implement than standard point-to-point QKD. Recently, an intermediary QKD protocol called detector-device-independent QKD (DDI-QKD) has been proposed to overcome the drawbacks of MDI-QKD, with the hope that it would eventually lead to a more efficient detector side-channel-free QKD system. Here, we analyze the security of DDI-QKD and elucidate its security assumptions. We find that DDI-QKD is not equivalent to MDI-QKD, but its security can be demonstrated with reasonable assumptions. On the more practical side, we consider the feasibility of DDI-QKD and present a fast experimental demonstration (clocked at 625 MHz), capable of secret key exchange up to more than 90 km.

Fast digitizing and digital signal processing of detector signals

International Nuclear Information System (INIS)

Hannaske, Roland

2008-01-01

A fast-digitizer data acquisition system recently installed at the neutron time-of-flight experiment nELBE, which is located at the superconducting electron accelerator ELBE of Forschungszentrum Dresden-Rossendorf, is tested with two different detector types. Preamplifier signals from a high-purity germanium detector are digitized, stored and finally processed. For a precise determination of the energy of the detected radiation, the moving-window deconvolution algorithm is used to compensate the ballistic deficit and different shaping algorithms are applied. The energy resolution is determined in an experiment with γ-rays from a 22 Na source and is compared to the energy resolution achieved with analogously processed signals. On the other hand, signals from the photomultipliers of barium fluoride and plastic scintillation detectors are digitized. These signals have risetimes of a few nanoseconds only. The moment of interaction of the radiation with the detector is determined by methods of digital signal processing. Therefore, different timing algorithms are implemented and tested with data from an experiment at nELBE. The time resolutions achieved with these algorithms are compared to each other as well as to reference values coming from analog signal processing. In addition to these experiments, some properties of the digitizing hardware are measured and a program for the analysis of stored, digitized data is developed. The analysis of the signals shows that the energy resolution achieved with the 10-bit digitizer system used here is not competitive to a 14-bit peak-sensing ADC, although the ballistic deficit can be fully corrected. However, digital methods give better result in sub-ns timing than analog signal processing. (orig.)

Development of a fast multi-line x-ray CT detector for NDT

International Nuclear Information System (INIS)

Hofmann, T.; Nachtrab, F.; Schlechter, T.; Mühlbauer, J.; Schröpfer, S.; Firsching, M.; Uhlmann, N.; Neubauer, H.; Ernst, J.; Schweiger, T.; Oberst, M.; Meyer, A.

2015-01-01

Typical X-ray detectors for non-destructive testing (NDT) are line detectors or area detectors, like e.g. flat panel detectors. Multi-line detectors are currently only available in medical Computed Tomography (CT) scanners. Compared to flat panel detectors, line and multi-line detectors can achieve much higher frame rates. This allows time-resolved 3D CT scans of an object under investigation. Also, an improved image quality can be achieved due to reduced scattered radiation from object and detector themselves. Another benefit of line and multi-line detectors is that very wide detectors can be assembled easily, while flat panel detectors are usually limited to an imaging field with a size of approx. 40 × 40 cm 2 at maximum. The big disadvantage of line detectors is the limited number of object slices that can be scanned simultaneously. This leads to long scan times for large objects. Volume scans with a multi-line detector are much faster, but with almost similar image quality. Due to the promising properties of multi-line detectors their application outside of medical CT would also be very interesting for NDT. However, medical CT multi-line detectors are optimized for the scanning of human bodies. Many non-medical applications require higher spatial resolutions and/or higher X-ray energies. For those non-medical applications we are developing a fast multi-line X-ray detector.In the scope of this work, we present the current state of the development of the novel detector, which includes several outstanding properties like an adjustable curved design for variable focus-detector-distances, conserving nearly uniform perpendicular irradiation over the entire detector width. Basis of the detector is a specifically designed, radiation hard CMOS imaging sensor with a pixel pitch of 200 μ m. Each pixel has an automatic in-pixel gain adjustment, which allows for both: a very high sensitivity and a wide dynamic range. The final detector is planned to have 256 lines of

Effect of shells on photoluminescence of aqueous CdTe quantum dots

International Nuclear Information System (INIS)

Yuan, Zhimin; Yang, Ping

2013-01-01

Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling

Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Heisler, Christoph; Brueckner, Michael; Lind, Felix; Kraft, Christian; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

Influence of the layer parameters on the performance of the CdTe solar cells

Science.gov (United States)

Haddout, Assiya; Raidou, Abderrahim; Fahoume, Mounir

2018-03-01

Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO: Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.

The next generation CdTe technology- Substrate foil based solar cells

Energy Technology Data Exchange (ETDEWEB)

Ferekides, Chris [Univ. of South Florida, Tampa, FL (United States)

2017-03-22

The main objective of this project was the development of one of the most promising Photovoltaic (PV) materials CdTe into a versatile, cost effective, and high throughput technology, by demonstrating substrate devices on foil substrates using high throughput fabrication conditions. The typical CdTe cell is of the superstrate configuration where the solar cell is fabricated on a glass superstrate by the sequential deposition of a TCO, n-type heterojunction partner, p-CdTe absorber, and back contact. Large glass modules are heavy and present significant challenges during manufacturing (uniform heating, etc.). If a substrate CdTe cell could be developed (the main goal of this project) a roll-to-toll high throughput technology could be developed.

Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

CERN Document Server

Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

2000-01-01

Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

Measurements of possible type inversion in silicon junction detectors by fast neutron irradiation

International Nuclear Information System (INIS)

Li, Z.; Kraner, H.W.

1991-05-01

The successful application of silicon position sensitive detectors in experiments at the SSC or LHC depends on an accurate assessment of the radiation tolerance of this detector species. In particular, fast neutrons (E av = 1 MeV) produce bulk displacement damage that is projected, from estimated fluences, to cause increased generation (leakage) current, charge collection deficiencies, resistivity changes and possibly semiconductor type change or inversion. Whereas the leakage current increase was believed to be the major concern for estimated fluences of 10 12 n/cm 2 experiment year at the initial SSC luminosity of 10 33 /cm 2 -sec, increased luminosity and exposure time has raised the possible exposure to 10 14 n/cm 2 , which opens the door for the several other radiation effects suggested above to play observable and significant roles in detector degradation or change. 17 refs., 19 figs

Emissions and encapsulation of cadmium in CdTe PV modules during fires

Energy Technology Data Exchange (ETDEWEB)

Fthenakis, V.M.; Fuhrmann, M.; Heiser, J.; Fitts, J.; Wang, W. [Brookhaven National Laboratory, Upton, NY (United States). Environmental Sciences Dept.; Lanzirotti, A. [University of Chicago, Chicago, IL (United States). Consortium for Advanced Radiation Resources

2005-12-15

Fires in residential and commercial properties are not uncommon. If such fires involve the roof, photovoltaic arrays mounted on the roof will be exposed to the flames. The amount of cadmium that can be released in fires involving CdTe PV and the magnitude of associated health risks has been debated. The current study aims in delineating this issue. Previous thermogravimetric studies of CdTe, involved pure CdTe and single-glass PV modules. The current study is based on glass-glass CdTe PV modules which are the only ones in the market. Pieces of commercial CdTe photovoltaic (PV) modules, sizes 25x3 cm, were heated to temperatures up to 1100{sup o}C to simulate exposure to residential and commercial building fires. The temperature rate and duration in these experiments were defined according to standard protocols. Four different types of analysis were performed to investigate emissions and redistribution of elements in the matrix of heated CdTe PV modules: (1) measurements of sample weight loss as a function of temperature; (2) analyses of Cd and Te in the gaseous emissions; (3) Cd distribution in the heated glass using synchrotron X-ray fluorescence microprobe analysis; and (4) chemical analysis for Cd and Te in the acid-digested glass. These experiments showed that almost all (i.e., 99.5%) of the cadmium content of CdTe PV modules was encapsulated in the molten glass matrix; a small amount of Cd escaped from the perimeter of the samples before the two sheets of glass melted together. Adjusting for this loss in full-size modules, results in 99.96% retention of Cd. Multiplying this with the probability of occurrence for residential fires in wood-frame houses in the US (e.g., 10{sup -4}), results in emissions of 0.06 mg/GWh; the probability of sustained fires and subsequent emissions in adequately designed and maintained utility systems appears to be zero. (Author)

Leakage current measurements on pixelated CdZnTe detectors

NARCIS (Netherlands)

Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

2006-01-01

In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

Time response of fast-gated microchannel plates used as x-ray detectors

International Nuclear Information System (INIS)

Turner, R.E.; Bell, P.; Hanks, R.; Kilkenny, J.D.; Landen, N.; Power, G.; Wiedwald, J.; Meier, M.

1990-01-01

We report measurements of the time response of fast-gated, micro- channel plate (MCP) detectors, using a <10 ps pulsewidth ultra-violet laser and an electronic sampling system to measure time resolutions to better than 25 ps. The results show that framing times of less than 100 ps are attainable with high gain. The data is compared to a Monte Carlo calculation, which shows good agreement. We also measured the relative sensitivity as a function of DC bias, and saturation effects for large signal inputs. In part B, we briefly describe an electrical ''time-of-flight'' technique, which we have used to measure the response time of a fast-gated microchannel plate (MCP). Thinner MCP's than previously used have been tested, and, as expected, show fast gating times and smaller electron multiplication. A preliminary design for an x-ray pinhole camera, using a thin MCP, is presented. 7 refs., 6 figs

Electrodeposition of CdTe thin film from acetate-based ionic liquid bath

Science.gov (United States)

Waldiya, Manmohansingh; Bhagat, Dharini; Mukhopadhyay, Indrajit

2018-05-01

CdTe being a direct band gap semiconductor, is mostly used in photovoltaics. Here we present, the synthesis of CdTe thin film on fluorine doped tin oxide (FTO) substrate potentiostatically using 1-butyl-3-methylimidazolium acetate ([Bmim][Ac]) ionic liquid (IL) bath at 90 °C. Major advantages of using electrodeposition involves process simplicity, large scalability & economic viability. Some of the benefits offered by IL electrolytic bath are low vapour pressure, wide electrochemical window, and good ionic mobility. Cd(CH3COO)2 (anhydrous) and TeO2 were used as the source precursors. The IL electrolytic bath temperature was kept at 90 °C for deposition, owing to the limited solubility of TeO2 in [Bmim][Ac] IL at room temperature. Cathodic electrodeposition was carried out using a three electrode cell setup at a constant potential of -1.20 V vs. platinum (Pt) wire. The CdTe/FTO thin film were annealed in argon (Ar) atmosphere. Optical study of nanostructured CdTe film were done using UV-Vis-IR and Raman spectroscopy. Raman analysis confirms the formation of CdTe having surface optics (SO) mode at 160.6 cm-1 and transverse optics (TO) mode at 140.5 cm-1. Elemental Te peaks at 123, 140.5 and 268 cm-1 were also observed. The optical band gap of Ar annealed CdTe thin film were found to be 1.47 eV (absorbance band edge ˜ 846 nm). The optimization of deposition parameters using acetate-based IL electrolytic bath to get nearly stoichiometric CdTe thin film is currently being explored.

Fast Track Finding in the ILC's Silicon Detector, SiD01

International Nuclear Information System (INIS)

Baker, David E.

2007-01-01

A fast track finder is presented which, unlike its more efficient, more computationally costly O(n3) time counterparts, tracks particles in O(n) time (for n being the number of hits). Developed as a tool for processing data from the ILC's proposed SiD detector, development of this fast track finder began with that proposed by Pablo Yepes in 1996 and adjusted to accommodate the changes in geometry of the SiD detector. First, space within the detector is voxellated, with hits assigned to voxels according to their r, φ, and η coordinates. A hit on the outermost layer is selected, and a 'sample space' is built from the hits in the selected hit's surrounding voxels. The hit in the sample space with the smallest distance to the first is then selected, and the sample space recalculated for this hit. This process continues until the list of hits becomes large enough, at which point the helical circle in the x, y plane is conformally mapped to a line in the x', y' plane, and hits are chosen from the sample spaces of the previous fit by selecting the hits which fit a line to the previously selected points with the smallest χ 2 . Track finding terminates when the innermost layer has been reached or no hit in the sample space fits those previously selected to an acceptable χ 2 . Again, a hit on the outermost layer is selected and the process repeats until no assignable hits remain. The algorithm proved to be very efficient on artificial diagnostic events, such as one hundred muons scattered at momenta of 1 GeV/c to 10 GeV/c. Unfortunately, when tracking simulated events corresponding to actual physics, the track finder's efficiency decreased drastically (mostly due to signal noise), though future data cleaning programs could noticeably increase its efficiency on these events

CDTE alloys and their application for increasing solar cell performance

Science.gov (United States)

Swanson, Drew E.

Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x

Laser-induced surface recrystallization of polycrystalline PbI2 thick films for X-ray detector application

Science.gov (United States)

Sun, Hui; Zhao, Beijun; Zhu, Xinghua; Zhu, Shifu; Yang, Dingyu; Wangyang, Peihua; Gao, Xiuyin

2018-01-01

In this work, laser-induced surface recrystallization process was developed to improve the surface properties and device performance of the polycrystalline PbI2 thick films prepared by using close space vapor deposition method. A continuous polycrystalline PbI2 recrystallized layer with a better mechanical strength and reflectivity improved from 2% to 4%-6% was obtained by this recrystallization process for the films with mechanical pretreatment. Other polytypes is absent in the recrystallized layer with the 2H-polytype remaining before and after treatment and obtaining improved electrical and X-ray photoelectric response performance. The pretreatment such as mechanical cutting/polishing and hydrogenation is necessary to lower the non-wetting crystallization behavior during the recrystallization process due to the rough surface state and oxygen contamination.

A fast neutron spectrometer based on an electrochemically etched CR-39 detector with degrader and front radiator

International Nuclear Information System (INIS)

Matiullah; Durrani, S.A.

1987-01-01

In addition to having promising applications for the development of a fast-neutron dosemeter, electrochemically etched (ECE) CR-39 detectors also offer the possibility of energy-selective fast-neutron detection. This property stems basically from the fact that, to produce 'sparkable' trails in the polymeric detector subjected to ECE, the charged particle resulting from a neutron interaction must fall within a definite 'energy window'. The lower and upper limits of proton energies that can yield ECE spots in CR-39 have been experimentally determined to be ∼ 50 keV and ∼ 2.2 MeV under our processing conditions. To accomplish our objective, we have developed a technique based on ECE spot-density measurements in CR-39 detectors placed in conjuction with judiciously chosen thicknesses of a polyethylene radiator and a lead degrader. The optimum thicknesses of the radiator and the degrader, for a given neutron energy, are determined by computer calculations. (author)

Gamma radiation detectors for safeguards applications

International Nuclear Information System (INIS)

Carchon, R.; Moeslinger, M.; Bourva, L.; Bass, C.; Zendel, M.

2007-01-01

The IAEA uses extensively a variety of gamma radiation detectors to verify nuclear material. These detectors are part of standardized spectrometry systems: germanium detectors for High-Resolution Gamma Spectrometry (HRGS); Cadmium Zinc Telluride (CZT) detectors for Room Temperature Gamma Spectrometry (RTGS); and NaI(Tl) detectors for Low Resolution Gamma Spectrometry (LRGS). HRGS with high-purity Germanium (HpGe) detectors cooled by liquid nitrogen is widely used in nuclear safeguards to verify the isotopic composition of plutonium or uranium in non-irradiated material. Alternative cooling systems have been evaluated and electrically cooled HpGe detectors show a potential added value, especially for unattended measurements. The spectrometric performance of CZT detectors, their robustness and simplicity are key to the successful verification of irradiated materials. Further development, such as limiting the charge trapping effects in CZT to provide improved sensitivity and energy resolution are discussed. NaI(Tl) detectors have many applications-specifically in hand-held radioisotope identification devices (RID) which are used to detect the presence of radioactive material where a lower resolution is sufficient, as they benefit from a generally higher sensitivity. The Agency is also continuously involved in the review and evaluation of new and emerging technologies in the field of radiation detection such as: Peltier-cooled CdTe detectors; semiconductor detectors operating at room temperature such as HgI 2 and GaAs; and, scintillator detectors using glass fibres or LaBr 3 . A final conclusion, proposing recommendations for future action, is made

Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

CERN Document Server

Hitomi, K; Shoji, T; Suehiro, T; Hiratate, Y

1999-01-01

Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime (mu tau) product and the energy required to create an electron-hole pair (the epsilon value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV gamma-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the epsilon value has been estimated to be about 5.85 eV for the TlBr crystal.

Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

International Nuclear Information System (INIS)

Pimentel, A.; Fortunato, E.; Goncalves, A.; Marques, A.; Aguas, H.; Pereira, L.; Ferreira, I.; Martins, R.

2005-01-01

In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5x10 8 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface

An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

Energy Technology Data Exchange (ETDEWEB)

Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

2009-09-07

The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

International Nuclear Information System (INIS)

Guerra, P; Santos, A; Darambara, D G

2009-01-01

The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm 3 CdZnTe pixellated detector.

Modelling and simulation of pixelated photon counting X-ray detectors for imaging; Modellierung und Simulation physikalischer Eigenschaften photonenzaehlender Roentgenpixeldetektoren fuer die Bildgebung

Energy Technology Data Exchange (ETDEWEB)

Durst, Juergen

2008-07-22

First of all the physics processes generating the energy deposition in the sensor volume are investigated. The spatial resolution limits of photon interactions and the range of secondary electrons are discussed. The signatures in the energy deposition spectrum in pixelated detectors with direct conversion layers are described. The energy deposition for single events can be generated by the Monte-Carlo-Simulation package ROSI. The basic interactions of photons with matter are evaluated, resulting in the ability to use ROSI as a basis for the simulation of photon counting pixel detectors with direct conversion. In the context of this thesis a detector class is developed to simulate the response of hybrid photon counting pixel detectors using high-Z sensor materials like Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs) in addition to silicon. To enable the realisation of such a simulation, the relevant physics processes and properties have to be implemented: processes in the sensor layer (provided by EGS4/LSCAT in ROSI), generation of charge carriers as electron hole pairs, diffusion and repulsion of charge carriers during drift and lifetime. Furthermore, several noise contributions of the electronics can be taken into account. The result is a detector class which allows the simulation of photon counting detectors. In this thesis the multiplicity framework is developed, including a formula to calculate or measure the zero frequency detective quantum efficiency (DQE). To enable the measurement of the multiplicity of detected events a cluster analysis program was developed. Random and systematic errors introduced by the cluster analysis are discussed. It is also shown that the cluster analysis method can be used to determine the averaged multiplicity with high accuracy. The method is applied to experimental data. As an example using the implemented detector class, the discriminator threshold dependency of the DQE and modulation transfer function is investigated in

Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

Science.gov (United States)

Moore, Andrew

Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

Joint estimation of the fast and thermal components of a high neutron flux with a two on-line detector system

International Nuclear Information System (INIS)

Filliatre, P.; Oriol, L.; Jammes, C.; Vermeeren, L.

2009-01-01

A fission chamber with a 242 Pu deposit is the best suited detector for on-line measurements of the fast component of a high neutron flux (∼10 14 ncm -2 s -1 or more) with a significant thermal component. To get the fast flux, it is, however, necessary to subtract the contribution of the thermal neutrons, which increases with fluence because of the evolution of the isotopic content of the deposit. This paper presents an algorithm that permits, thanks to measurements provided by a 242 Pu fission chamber and a detector for thermal neutrons, to estimate the thermal and the fast flux at any time. An implementation allows to test it with simulated data.

Polycrystalline scintillators for large area detectors in HEP experiments

Science.gov (United States)

Dosovitskiy, G.; Fedorov, A.; Karpyuk, P.; Kuznetsova, D.; Mikhlin, A.; Kozlov, D.; Dosovitskiy, A.; Korjik, M.

2017-06-01

After significant increase of the accelerator luminosity throughout the High Luminosity phase of LHC, charged hadrons and neutrons with fluences higher than 1014 p/cm2 per year in the largest pseudo-rapidity regions of the detectors will cause increased radiation damage of materials. Increasing activation of the experimental equipment will make periodical maintenance and replacement of detector components difficult. Therefore, the selected materials for new detectors should be tolerant to radiation damage. Y3Al5O12:Ce (YAG:Ce) crystal was found to be one of the most radiation hard scintillation materials. However, production of YAG:Ce in a single crystalline form is costly, because crystal growth is performed at temperature near 1900°C with a very low rate of transformation of a raw material into a crystal. We propose translucent YAG:Ce ceramics as an alternative cheaper solution. Ceramic samples were sintered up to density ~98% of the theoretical value and were translucent. The samples have demonstrated light yield of 2200 phot./MeV under 662 keV γ-quanta, which gives the expected response to minimum ionizing particle around 3000 phot. for 2 mm thick plate. Scintillation light yield, registered under surface layer excitation with α-particles, was 50-70% higher than for the reference single crystal YAG:Ce.

Development of a counting pixel detector for 'Digitales Roentgen'

International Nuclear Information System (INIS)

Lindner, M.

2001-08-01

The development of a single photon counting X-ray imaging detector for medical applications using hybrid pixel detectors is reported. The electronics development from the first prototype derived from detector development for particle physics experiments (ATLAS) to the imaging chip MPEC (multi picture element counters) for medical applications is described. This chip consists of 32 x 32 pixels of 200 μm x 200 μm size, each containing the complete read out electronics, i.e. an amplifier, two discriminators with adjustable thresholds and two 18-bit linear feedback shift-counters allowing energy windowing for contrast increase. Results on electronics performance are shown as well as measurements with several semiconductor materials (Si, GaAs, CdTe). Important aspects like detection efficiency, sensor homogeneity, linearity and spatial resolution are discussed. (orig.)

Feasibility study of Self Powered Neutron Detectors in Fast Reactors for detecting local change in neutron flux distribution

International Nuclear Information System (INIS)

Jammes, Christian; Filliatre, Philippe; Verma, Vasudha; Hellesen, Carl; Jacobsson Svard, Staffan

2015-01-01

Neutron flux monitoring system forms an integral part of the design of a Generation IV sodium cooled fast reactor system. Diverse possibilities of detector systems installation have to be investigated with respect to practicality and feasibility according to the detection parameters. In this paper, we demonstrate the feasibility of using self powered neutron detectors as in-core detectors in fast reactors for detecting local change in neutron flux distribution. We show that the gamma contribution from fission products decay in the fuel and activation of structural materials is very small compared to the fission gammas. Thus, it is possible for the in-core SPND signal to follow changes in local neutron flux as they are proportional to each other. This implies that the signal from an in-core SPND can provide dynamic information on the neutron flux perturbations occurring inside the reactor core. (authors)

Feasibility study of Self Powered Neutron Detectors in Fast Reactors for detecting local change in neutron flux distribution

Energy Technology Data Exchange (ETDEWEB)

Jammes, Christian; Filliatre, Philippe [CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St Paul-Lez-Durance, (France); Verma, Vasudha; Hellesen, Carl; Jacobsson Svard, Staffan [Division of Applied Nuclear Physics, Uppsala University, SE-75120 Uppsala, (Sweden)

2015-07-01

Neutron flux monitoring system forms an integral part of the design of a Generation IV sodium cooled fast reactor system. Diverse possibilities of detector systems installation have to be investigated with respect to practicality and feasibility according to the detection parameters. In this paper, we demonstrate the feasibility of using self powered neutron detectors as in-core detectors in fast reactors for detecting local change in neutron flux distribution. We show that the gamma contribution from fission products decay in the fuel and activation of structural materials is very small compared to the fission gammas. Thus, it is possible for the in-core SPND signal to follow changes in local neutron flux as they are proportional to each other. This implies that the signal from an in-core SPND can provide dynamic information on the neutron flux perturbations occurring inside the reactor core. (authors)

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

2014-09-15

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

International Nuclear Information System (INIS)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

2014-01-01

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Preparation of bubble damage detectors

International Nuclear Information System (INIS)

Tu Caiqing; Guo Shilun; Wang Yulan; Hao Xiuhong; Chen Changmao; Su Jingling

1997-01-01

Bubble damage detectors have been prepared by using polyacrylamide as detector solid and freon as detector liquid. Tests show that the prepared detectors are sensitive to fast neutrons and have proportionality between bubble number and neutron fluence within a certain range of neutron fluence. Therefore, it can be used as a fast neutron detector and a dosimeter

Metastability and reliability of CdTe solar cells

Science.gov (United States)

Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

2018-04-01

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

Current simulation of symmetric contacts on CdTe

International Nuclear Information System (INIS)

Ruzin, A.

2011-01-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Current simulation of symmetric contacts on CdTe

Energy Technology Data Exchange (ETDEWEB)

Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

2011-12-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Study on the novel neutron-to-proton convertor for improving the detection efficiency of a triple GEM based fast neutron detector

International Nuclear Information System (INIS)

Wang Xiaodong; Yang Lei; Zhang Chunhui; Hu Bitao; Yang Herun; Zhang Junwei; Ren Zhongguo; Ha Ri-Ba-La; An Luxing

2015-01-01

A high-efficiency fast neutron detector prototype based on a triple Gas Electron Multiplier (GEM) detector, which, coupled with a novel multi-layered high-density polyethylene (HDPE) as a neutron-to-proton converter for improving the neutron detection efficiency, is introduced and tested with the Am-Be neutron source in the Institute of Modern Physics (IMP) at Lanzhou in the present work. First, the developed triple GEM detector is tested by measuring its effective gain and energy resolution with "5"5Fe X-ray source to ensure that it has a good performance. The effective gain and obtained energy resolution is 5.0 × 10"4 and around 19.2%, respectively. Secondly, the novel multi-layered HDPE converter is coupled with the cathode of the triple GEM detector making it a high-efficiency fast neutron detector. Its effective neutron response is four times higher than that of the traditional single-layered conversion technique when the converter layer number is 38. (authors)

Enhanced glutathione content allows the in vivo synthesis of fluorescent CdTe nanoparticles by Escherichia coli.

Directory of Open Access Journals (Sweden)

Juan P Monrás

Full Text Available The vast application of fluorescent semiconductor nanoparticles (NPs or quantum dots (QDs has prompted the development of new, cheap and safer methods that allow generating QDs with improved biocompatibility. In this context, green or biological QDs production represents a still unexplored area. This work reports the intracellular CdTe QDs biosynthesis in bacteria. Escherichia coli overexpressing the gshA gene, involved in glutathione (GSH biosynthesis, was used to produce CdTe QDs. Cells exhibited higher reduced thiols, GSH and Cd/Te contents that allow generating fluorescent intracellular NP-like structures when exposed to CdCl(2 and K(2TeO(3. Fluorescence microscopy revealed that QDs-producing cells accumulate defined structures of various colors, suggesting the production of differently-sized NPs. Purified fluorescent NPs exhibited structural and spectroscopic properties characteristic of CdTe QDs, as size and absorption/emission spectra. Elemental analysis confirmed that biosynthesized QDs were formed by Cd and Te with Cd/Te ratios expected for CdTe QDs. Finally, fluorescent properties of QDs-producing cells, such as color and intensity, were improved by temperature control and the use of reducing buffers.

A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

Energy Technology Data Exchange (ETDEWEB)

Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

2008-06-18

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

International Nuclear Information System (INIS)

Liu Yan; Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang; Yu Dongdong; Zhou Jianguang

2008-01-01

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals

Joint estimation of the fast and thermal components of a high neutron flux with a two on-line detector system

Energy Technology Data Exchange (ETDEWEB)

Filliatre, P. [CEA, DEN, SPEx/LDCI, F-13108 Saint-Paul-lez-Durance (France); Laboratoire Commun d' Instrumentation CEA-SCK-CEN (France)], E-mail: philippe.filliatre@cea.fr; Oriol, L.; Jammes, C. [CEA, DEN, SPEx/LDCI, F-13108 Saint-Paul-lez-Durance (France); Laboratoire Commun d' Instrumentation CEA-SCK-CEN (France); Vermeeren, L. [SCK-CEN, Boeretang 200, B-2400 Mol (Belgium); Laboratoire Commun d' Instrumentation CEA-SCK-CEN (France)

2009-05-21

A fission chamber with a {sup 242}Pu deposit is the best suited detector for on-line measurements of the fast component of a high neutron flux ({approx}10{sup 14}ncm{sup -2}s{sup -1} or more) with a significant thermal component. To get the fast flux, it is, however, necessary to subtract the contribution of the thermal neutrons, which increases with fluence because of the evolution of the isotopic content of the deposit. This paper presents an algorithm that permits, thanks to measurements provided by a {sup 242}Pu fission chamber and a detector for thermal neutrons, to estimate the thermal and the fast flux at any time. An implementation allows to test it with simulated data.

Fast neutron detection with germanium detectors: computation of response functions for the 692 keV inelastic scattering peak

International Nuclear Information System (INIS)

Fehrenbacher, G.; Meckbach, R.; Paretzke, H.G.

1996-01-01

The dependence of the shape of the right-sided broadening of the inelastic scattering peak at 692 keV in the pulse-height distribution measured with a Ge detector in fast neutron fields on the energy of the incident neutrons has been analyzed. A model incorporating the process contributing to the energy deposition that engender the peak, including the partitioning of the energy deposition by the Ge recoils, was developed. With a Monte Carlo code based on this model, the detector response associated with this peak was computed and compared with results of measurements with quasi-monoenergetic neutrons for energies between 0.88 and 2.1 MeV. A set of 80 response functions for neutron energies in the range from the reaction threshold at 0.7 to 6 MeV was computed, which will serve as a starting point for methods, which aim at obtaining information on the spectral distribution of fast neutron fields for this energy range from measurements with a Ge detector. (orig.)

A fast integrated readout system for a cathode pad photon detector

Energy Technology Data Exchange (ETDEWEB)

French, M. (Rutherford Appleton Lab., Chilton (United Kingdom)); Lovell, M. (Rutherford Appleton Lab., Chilton (United Kingdom)); Chesi, E. (CERN, ECP Div., Geneva (Switzerland)); Racz, A. (CERN, ECP Div., Geneva (Switzerland)); Seguinot, J. (Coll. de France, Paris (France)); Ypsilantis, T. (Coll. de France, Paris (France)); Arnold, R. (CRN, Louis Pasteur Univ., Strasbourg (France)); Guyonnet, J.L. (CRN, Louis Pasteur Univ., Strasbourg (France)); Egger, J. (Paul Scherrer Inst., Villigen (Switzerland)); Gabathuler, K. (Paul Scherrer Inst., Villigen (Switzerland))

1994-04-01

A fast integrated electronic chain is presented to read out the cathode pad array of a multiwire photon detector for a fast RICH counter. Two VLSI circuits have been designed and produced. An analog eight channel, low noise, fast, bipolar, current preamplifier and discriminator chip serves as front-end electronics. It has an rms equivalent noise current of 10 nA (2000 e[sup -]), 50 MHz bandwidth with 10 mW of power consumption per channel. Two analogue chips are coupled to a digital 16 channels CMOS readout chip, operating at 20 MHz, that provides a pipelined delay of 1.3 [mu]s and zero suppression with a power consumption of about 6 mW per channel. Readout of a 4000 pad sector requires 3-4 [mu]s depending on the number of hit pads. The full RICH counter is made up of many of such sectors (the prototype has three fully equipped sectors), read out in parallel. The minimum time to separate successive hits on the same pad is about 70 ns. The time skew of the full chain is about 15 ns. (orig.)

Recent progress of fast-ion loss detector project in Asian fusion experiments

International Nuclear Information System (INIS)

Isobe, Mitsutaka; Zhang Yipo; Kim, Jun-Young

2013-01-01

The A3 foresight program is accelerating close collaboration for fast-ion diagnostics development between Asian three countries. A recent big step in our activities is that the operation of fast-ion loss detector (FILD) on HL-2A has begun lately. The localized bright spot appeared on the scintillator screen while a high-energy neutral beam was tangentially co-injected. The design of FILD system on EAST is steadily ongoing. The diagnostics port available for our purpose was decided in March, 2013. For KSTAR, the FILD is working successfully. In order to understand observed beam-ion loss signals while the RMP coils are turned on, the LORBIT code has been improved recently to treat non-axisymmetric perturbed field due to RMP coils and discreteness of TF coils. (author)

Development of SiPM-based scintillator tile detectors for a multi-layer fast neutron tracker

Directory of Open Access Journals (Sweden)

Jakubek J.

2012-10-01

Full Text Available We are developing thin tile scintillator detectors with silicon photomultiplier (SiPM readout for use in a multi-layer fast-neutron tracker. The tracker is based on interleaved Timepix and plastic scintillator layers. The thin 15 × 15 × 2 mm plastic scintillators require suitable optical readout in order to detect and measure the energy lost by energetic protons that have been recoiled by fast neutrons. Our first prototype used dual SiPMs, coupled to opposite edges of the scintillator tile using light-guides. An alternative readout geometry was designed in an effort to increase the fraction of scintillation light detected by the SiPMs. The new prototype uses a larger SiPM array to cover the entire top face of the tile. This paper details the comparative performance of the two prototype designs. A deuterium-tritium (DT fast-neutron source was used to compare the relative light collection efficiency of the two designs. A collimated UV light source was scanned across the detector face to map the uniformity. The new prototype was found to have 9.5 times better light collection efficiency over the original design. Both prototypes exhibit spatial non-uniformity in their response. Methods of correcting this non-uniformity are discussed.

SYNTHESIS AND CHARACTERIZATION OF CdTe QUANTUM ...

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variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the ... QDs requires nitrogen as the protective gas at the initial stage. ... three-fold volume isopropyl alcohol, and the sediment was collected after centrifugation at 4000.

Excitons in tunnel coupled CdTe and (Cd,Mn)Te quantum wells

Energy Technology Data Exchange (ETDEWEB)

Terletskii, Oleg; Ryabchenko, Sergiy; Tereshchenko, Oleksandr [Institute of Physics NASU, pr. Nauki 46, 03680 Kyiv (Ukraine); Sugakov, Volodymyr; Vertsimakha, Ganna [Institute for Nuclear Research NASU, pr. Nauki 47, 03680 Kyiv (Ukraine); Karczewski, Grzegorz [Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw (Poland)

2017-05-15

The photoluminescence (PL) from structures containing Cd{sub 0.95}Mn{sub 0.05}Te and CdTe quantum wells (QWs) separated by a narrow (1.94 nm) barrier was studied. The PL lines of comparable intensities from several possible exciton states were observed simultaneously at energy distances substantially exceeding kT. This means that the energy transfer in the studied systems is slower than the radiative recombination of the confined excitons. For the CdTe QW width of about 8.7-9 nm, indirect excitons with the electron and heavy hole chiefly localized in the CdTe and Cd{sub 1-x}Mn{sub x}Te QWs, respectively, were detected in the magnetic field. These indirect excitons have PL energy of about 10-20 meV above the PL line of the direct excitons in the CdTe QW. The observation of the PL from the indirect excitons which are not the lowest excitations in the structure is a distinctive feature of the system. Photoluminescence intensity dependence on the energy and the magnetic field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Polycrystalline CVD diamond device level modeling for particle detection applications

Science.gov (United States)

Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

2016-12-01

Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

Polycrystalline CVD diamond device level modeling for particle detection applications

International Nuclear Information System (INIS)

Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

2016-01-01

Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

Facile aqueous synthesis and growth mechanism of CdTe nanorods

International Nuclear Information System (INIS)

Gong Haibo; Hao Xiaopeng; Gao Chang; Wu Yongzhong; Du Jie; Xu Xiangang; Jiang Minhua

2008-01-01

Single-crystal CdTe nanorods with diameters of 50-100 nm were synthesized under a surfactant-assisted hydrothermal condition. The experimental results indicated that with a temporal dependence the morphologies of CdTe nanocrystallites changed from nanoparticles to smooth surface nanorods. The crystal structure, morphology and optical properties of the products were investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) and fluorescence spectrophotometer. Furthermore, the formation mechanisms of the nanorods were investigated and discussed on the basis of the experimental results.

Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells

Energy Technology Data Exchange (ETDEWEB)

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

1992-09-01

This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

Advancements in the development of a directional-position sensing fast neutron detector using acoustically tensioned metastable fluids

Energy Technology Data Exchange (ETDEWEB)

Archambault, Brian C. [Sagamore Adams Laboratories, Lafayette, IN (United States); Webster, Jeffrey A.; Grimes, Thomas F.; Fischer, Kevin F.; Hagen, Alex R. [School of Nuclear Engineering, Purdue University, 400 Central Avenue, West Lafayette, IN 47907 (United States); Taleyakhan, Rusi P., E-mail: rusi@purdue.edu [Sagamore Adams Laboratories, Lafayette, IN (United States); School of Nuclear Engineering, Purdue University, 400 Central Avenue, West Lafayette, IN 47907 (United States)

2015-06-01

Advancements in the development of a direction and position sensing fast neutron detector which utilizes the directional acoustic tensioned metastable fluid detector (D-ATMFD) are described. The resulting D-ATMFD sensor is capable of determining the direction of neutron radiation with a single compact detector versus use of arrays of detectors in conventional directional systems. Directional neutron detection and source positioning offer enhanced detection speeds in comparison to traditional proximity searching; including enabling determination of the neutron source shape, size, and strength in near real time. This paper discusses advancements that provide the accuracy and precision of ascertaining directionality and source localization information utilizing enhanced signal processing-cum-signal analysis, refined computational algorithms, and on-demand enlargement capability of the detector sensitive volume. These advancements were accomplished utilizing experimentation and theoretical modeling. Benchmarking and qualifications studies were successfully conducted with random and fission based special nuclear material (SNM) neutron sources ({sup 239}Pu–Be and {sup 252}Cf). These results of assessments have indicated that the D-ATMFD compares well in technical performance with banks of competing directional fast neutron detector technologies under development worldwide, but it does so with a single detector unit, an unlimited field of view, and at a significant reduction in both cost and size while remaining completely blind to common background (e.g., beta-gamma) radiation. Rapid and direct SNM neutron source imaging with two D-ATMFD sensors was experimentally demonstrated, and furthermore, validated via multidimensional nuclear particle transport simulations utilizing MCNP-PoliMi. Characterization of a scaled D-ATMFD based radiation portal monitor (RPM) as a cost-effective and efficient {sup 3}He sensor replacement was performed utilizing MCNP-PoliMi simulations

Tutorial on X-ray photon counting detector characterization.

Science.gov (United States)

Ren, Liqiang; Zheng, Bin; Liu, Hong

2018-01-01

Recent advances in photon counting detection technology have led to significant research interest in X-ray imaging. As a tutorial level review, this paper covers a wide range of aspects related to X-ray photon counting detector characterization. The tutorial begins with a detailed description of the working principle and operating modes of a pixelated X-ray photon counting detector with basic architecture and detection mechanism. Currently available methods and techniques for charactering major aspects including energy response, noise floor, energy resolution, count rate performance (detector efficiency), and charge sharing effect of photon counting detectors are comprehensively reviewed. Other characterization aspects such as point spread function (PSF), line spread function (LSF), contrast transfer function (CTF), modulation transfer function (MTF), noise power spectrum (NPS), detective quantum efficiency (DQE), bias voltage, radiation damage, and polarization effect are also remarked. A cadmium telluride (CdTe) pixelated photon counting detector is employed for part of the characterization demonstration and the results are presented. This review can serve as a tutorial for X-ray imaging researchers and investigators to understand, operate, characterize, and optimize photon counting detectors for a variety of applications.

CdTe and CdZnTe detectors in nuclear medicine

CERN Document Server

Scheiber, C

2000-01-01

Nuclear medicine diagnostic applications are growing in search for more disease specific or more physiologically relevant imaging. The data are obtained non-invasively from large field gamma cameras or from miniaturised probes. As far as single photon emitters are concerned, often labelled with sup 9 sup 9 sup m Tc (140 keV, gamma), nuclear instrumentation deals with poor counting statistics due to the method of spatial localisation and low contrast to noise due to scatter in the body. Since the 1960s attempts have been made to replace the NaI scintillator by semiconductor detectors with better spectrometric characteristics to improve contrast and quantitative measurements. They allow direct conversion of energy and thus more compact sensors. Room-temperature semiconductor detectors such as cadmium tellure and cadmium zinc tellure have favourable physical characteristics for medical applications which have been investigated in the 1980s. During one decade, they have been used in miniaturised probes such as fo...

Heavy doping of CdTe single crystals by Cr ion implantation

Science.gov (United States)

Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

2018-03-01

Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

Energy Technology Data Exchange (ETDEWEB)

Schwenke, M., E-mail: schwenke@asp.tu-dresden.de [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); Zuber, K.; Janutta, B. [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); He, Z.; Zeng, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104 (United States); Anton, G.; Michel, T.; Durst, J.; Lueck, F.; Gleixner, T. [Erlangen Centre for Astroparticle Physics, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany); Goessling, C.; Schulz, O.; Koettig, T. [Technische Universitaet Dortmund, Physik E IV, 44221 Dortmund (Germany); Krawczynski, H.; Martin, J. [Department of Physics, Washington University in St. Louis, Campus Box 1105, One Brookings Drive, St. Louis, MO 63130-4899 (United States); Stekl, I.; Cermak, P. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague (Czech Republic)

2011-09-11

The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

Study and optimisation of the high energy detector in Cd(Zn)Te of the Simbol-X space mission for X and gamma astronomy

International Nuclear Information System (INIS)

Meuris, A.

2009-09-01

Stars in final phases of evolution are sites of highest energetic phenomena of the Universe. The understanding of their mechanisms is based on the observation of the X and gamma rays from the sources. The Simbol-X French-Italian project is a novel concept of telescope with two satellites flying in formation. This space mission combines upgraded optics from X-ray telescopes with detection Systems from gamma-ray telescopes. CEA Saclay involved in major space missions for gamma astronomy is in charge of the definition and the design of the High Energy Detector (HED) of Simbol-X to cover the spectral range from 8 to 80 keV. Two generations of micro-cameras called Caliste have been designed, fabricated and tested. They integrate cadmium telluride (CdTe) crystals and optimised front-end electronics named Idef-X. The hybridization technique enables to put them side by side as a mosaic to achieve for the first time a CdTe detection plane with fine spatial resolution (600 μm) and arbitrarily large surface. By setting up test benches and leading test campaigns, I was involved in the fabrication of Caliste prototypes and I assessed temporal, spatial and spectral resolutions. At the conclusion of experiments and simulations, I propose a detector type, operating conditions and digital processing on board the spacecraft to optimise HED performance. The best detector candidate is CdTe Schottky, well suited to high resolution spectroscopy; however, it suffers from lost in stability during biasing. Beyond Simbol-X mission, I studied theoretically and experimentally this kind of detector to build an updated model that can apply to other projects of gamma spectroscopy and imaging. (author)

Position sensitive detector for X-ray photons

International Nuclear Information System (INIS)

Barbosa, A.F.

1988-01-01

This work reports the theoretical basis and the details of the construction process, characterization and application of gas X-ray position sensitive detectors. The unidimensional detector consists of a gas camera (argon and CH 4 ), a metallic anode, a cathode and a delay line. Details of the construction process are given in order to allow the reproduction of the detector. It has been characterized by measuring its spatial resolution, homogeneity and linerity. The built linear detector has been used to obtain diffraction diagrams from polycrystalline silicon, C 23 H 48 paraffin and glassy carbon. These diagrams have been compared with those obtained under equivalent conditions with a conventional proportional detector by the step scanning method. It has been shown that the detector provides diffraction diagrams of equivalent quality to those obtained by the step scanning method, in appreciably lower time intervals. (author) [pt

Recent state of CdTe-based radiation detectors

International Nuclear Information System (INIS)

Ohno, R.

2004-01-01

Recent state for development of CdTe-based radiation detectors is reviewed. The progress of the technologies such as the crystal growth of CdTe and CdZnTe, the deposition of electrodes on the crystal, the design of read out ASIC, and the bonding between crystal and ASIC, opened the way for the development of imaging devices for practical uses. A X-ray imager for non destructive inspections and a gamma ray imager for small animal radioisotope experiments or nuclear medicine are presented as examples. (author)

Delayed electron relaxation in CdTe nanorods studied by spectral analysis of the ultrafast transient absorption

International Nuclear Information System (INIS)

Kriegel, I.; Scotognella, F.; Soavi, G.; Brescia, R.; Rodríguez-Fernández, J.; Feldmann, J.; Lanzani, G.; Tassone, F.

2016-01-01

Highlights: • We study the photophysics of CdTe nanorods by ultrafast absorption spectroscopy. • We fit photobleaching and photoinduced absorption features at all time delays. • Dynamics are extracted from superpositions of bleaches (Gaussians) and derivatives. • Fast non-radiative recombination and slower hole trapping processes are extracted. • A potential approach to unveil ultrafast non-radiative recombination processes. - Abstract: In transient absorption (TA) spectra, the bleach features originating from state filling are overlapped by their energy-shifted derivatives, arising from excited state energy level shifts. This makes the direct extraction of carrier dynamics from a single-wavelength time-trace misleading. Fitting TA spectra in time, as Gaussian functions and their derivative-like shifted Gaussians, allows to individually extract the real dynamics of both photobleached transitions, and their energy shifts. In CdTe nanorods (NRs) we found a delayed heating of holes due to the release of the large excess energy in the electron relaxation process. The slow hole-trapping process is consistent with a high number of surface trap states in these model NRs. Our results show that only a correct disentanglement of bleaching and energy shift contributions provides a reliable framework to extract the underlying carrier relaxation dynamics, including trapping, non-radiative recombination, and eventually carrier multiplication.

Delayed electron relaxation in CdTe nanorods studied by spectral analysis of the ultrafast transient absorption

Energy Technology Data Exchange (ETDEWEB)

Kriegel, I., E-mail: ilka.kriegel@iit.it [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Scotognella, F. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy); Soavi, G. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Brescia, R. [Department of Nanochemistry, Istituto Italiano di Tecnologia (IIT), via Morego 30, 16163 Genova (Italy); Rodríguez-Fernández, J.; Feldmann, J. [Photonics and Optoelectronics Group, Department of Physics and CeNS, Ludwig-Maximilians-Universität München, Amalienstr. 54, 80799 Munich (Germany); Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 Munich (Germany); Lanzani, G., E-mail: guglielmo.lanzani@iit.it [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy); Tassone, F. [CNST of IIT@POLIMI, Via Pascoli 70/3, 20133 Milano (Italy)

2016-06-01

Highlights: • We study the photophysics of CdTe nanorods by ultrafast absorption spectroscopy. • We fit photobleaching and photoinduced absorption features at all time delays. • Dynamics are extracted from superpositions of bleaches (Gaussians) and derivatives. • Fast non-radiative recombination and slower hole trapping processes are extracted. • A potential approach to unveil ultrafast non-radiative recombination processes. - Abstract: In transient absorption (TA) spectra, the bleach features originating from state filling are overlapped by their energy-shifted derivatives, arising from excited state energy level shifts. This makes the direct extraction of carrier dynamics from a single-wavelength time-trace misleading. Fitting TA spectra in time, as Gaussian functions and their derivative-like shifted Gaussians, allows to individually extract the real dynamics of both photobleached transitions, and their energy shifts. In CdTe nanorods (NRs) we found a delayed heating of holes due to the release of the large excess energy in the electron relaxation process. The slow hole-trapping process is consistent with a high number of surface trap states in these model NRs. Our results show that only a correct disentanglement of bleaching and energy shift contributions provides a reliable framework to extract the underlying carrier relaxation dynamics, including trapping, non-radiative recombination, and eventually carrier multiplication.

Performance of silicon pad detectors after mixed irradiations with neutrons and fast charged hadrons

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Jozef Stefan Institute, Department of Physics, University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)], E-mail: Gregor.Kramberger@ijs.si; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute, Department of Physics, University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)

2009-10-11

A large set of silicon pad detectors produced on MCz and FZ wafer of p- and n-type was irradiated in two steps, first by fast charged hadrons followed by reactor neutrons. In this way the irradiations resemble the real irradiation fields at LHC. After irradiations controlled annealing started in steps during which the evolution of full depletion voltage, leakage current and charge collection efficiency was monitored. The damage introduced by different irradiation particles was found to be additive. The most striking consequence of that is a decrease of the full depletion voltage for n-type MCz detectors after additional neutron irradiation. This confirms that effective donors introduced by charged hadron irradiation are compensated by acceptors from neutron irradiation.

Performance of silicon pad detectors after mixed irradiations with neutrons and fast charged hadrons

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2009-01-01

A large set of silicon pad detectors produced on MCz and FZ wafer of p- and n-type was irradiated in two steps, first by fast charged hadrons followed by reactor neutrons. In this way the irradiations resemble the real irradiation fields at LHC. After irradiations controlled annealing started in steps during which the evolution of full depletion voltage, leakage current and charge collection efficiency was monitored. The damage introduced by different irradiation particles was found to be additive. The most striking consequence of that is a decrease of the full depletion voltage for n-type MCz detectors after additional neutron irradiation. This confirms that effective donors introduced by charged hadron irradiation are compensated by acceptors from neutron irradiation.

Status of the R&D activity on diamond particle detectors

Science.gov (United States)

Adam, W.; Bellini, B.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Doroshenko, J.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Furetta, C.; Gan, K. K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Karl, C.; Kass, R.; Keil, M.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Perera, L.; Pernicka, M.; Polesello, P.; Potenza, R.; Riester, J. L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

2003-09-01

Chemical Vapor Deposited (CVD) polycrystalline diamond has been proposed as a radiation-hard alternative to silicon in the extreme radiation levels occurring close to the interaction region of the Large Hadron Collider. Due to an intense research effort, reliable high-quality polycrystalline CVD diamond detectors, with up to 270 μm charge collection distance and good spatial uniformity, are now available. The most recent progress on the diamond quality, on the development of diamond trackers and on radiation hardness studies are presented and discussed.

Design and theoretical investigation of a digital x-ray detector with large area and high spatial resolution

Science.gov (United States)

Gui, Jianbao; Guo, Jinchuan; Yang, Qinlao; Liu, Xin; Niu, Hanben

2007-05-01

X-ray phase contrast imaging is a promising new technology today, but the requirements of a digital detector with large area, high spatial resolution and high sensitivity bring forward a large challenge to researchers. This paper is related to the design and theoretical investigation of an x-ray direct conversion digital detector based on mercuric iodide photoconductive layer with the latent charge image readout by photoinduced discharge (PID). Mercuric iodide has been verified having a good imaging performance (high sensitivity, low dark current, low voltage operation and good lag characteristics) compared with the other competitive materials (α-Se,PbI II,CdTe,CdZnTe) and can be easily deposited on large substrates in the manner of polycrystalline. By use of line scanning laser beam and parallel multi-electrode readout make the system have high spatial resolution and fast readout speed suitable for instant general radiography and even rapid sequence radiography.

Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

Science.gov (United States)

Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Pinsard, F.; Vassal, M. C.; Soufflet, F.; Le Mer, I.

2009-10-01

In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm 2 Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 °C and biased at -500 V.

Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

International Nuclear Information System (INIS)

Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Pinsard, F.; Vassal, M.C.; Soufflet, F.; Le Mer, I.

2009-01-01

In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm 2 Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 deg. C and biased at -500 V.

Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

Energy Technology Data Exchange (ETDEWEB)

Meuris, A. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France)], E-mail: aline.meuris@cea.fr; Limousin, O. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Lugiez, F.; Gevin, O. [CEA, Irfu, Service d' Electronique, de Detecteurs et d' Informatique, F-91191 Gif-sur-Yvette (France); Blondel, C.; Pinsard, F. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Vassal, M.C.; Soufflet, F. [3D Plus, 641 rue Helene Boucher, F-78532 Buc (France); Le Mer, I. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France)

2009-10-21

In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm{sup 2} Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 deg. C and biased at -500 V.

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

International Nuclear Information System (INIS)

Oliveira, Icimone B.

2011-01-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

2011-07-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Use of various device geometries to improve the performance of CdTe detectors

International Nuclear Information System (INIS)

Zanio, K.

1977-01-01

Cadmium telluride detectors were fabricated from semi-insulating material (rho>10 7 Ω.cm) with different geometries. So as to take advantages of the superior mobility-trapping time products of electrons (equal to 6.10x10 -4 cm 2 /V) as compared to those of holes approximately 5x10 -6 cm 2 /V) and suit different ranges of photon energies. In the case of X-ray detectors, plane parallel devices were fabricated with active areas up to 3cm 2 . For the case of high energy more penetrating radiation, cube shaped detectors, having nonuniform electric fields, were fabricated. Arrays were also made from such cubes to evaluate their potential use in imaging applications at room temperature. Where a small frontal area but high efficiency is required, such as in ablation studies for reentry vehicles, bar-shaped detectors, 3mmx7mm and up to 2cm in length are appropriate and were also fabricated

Commissioning of the IDS Neutron Detector and $\\beta$-decay fast-timing studies at IDS

CERN Document Server

Piersa, Monika

2016-01-01

The following report describes my scientific activities performed during the Summer Student Programme at ISOLDE. The main part of my project was focused on commissioning the neutron detector dedicated to nuclear decay studies at ISOLDE Decay Station (IDS). I have participated in all the steps needed to make it operational for the IS609 experiment. In the testing phase, we obtained expected detector response and calibrations confirmed its successful commissioning. The detector was mounted in the desired geometry at IDS and used in measurements of the beta-delayed neutron emission of $^8$He. After completing aforementioned part of my project, I became familiar with the fast-timing method. This technique was applied at IDS in the IS610 experiment performed in June 2016 to explore the structure of neutron-rich $^{130-134}$Sn nuclei. Since the main part of my PhD studies will be the analysis of data collected in this experiment, the second part of my project was dedicated to acquiring knowledge about technical de...

Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

Directory of Open Access Journals (Sweden)

M. M. Aliyu

2012-01-01

Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

Dose Calibration of the ISS-RAD Fast Neutron Detector

Science.gov (United States)

Zeitlin, C.

2015-01-01

The ISS-RAD instrument has been fabricated by Southwest Research Institute and delivered to NASA for flight to the ISS in late 2015 or early 2016. ISS-RAD is essentially two instruments that share a common interface to ISS. The two instruments are the Charged Particle Detector (CPD), which is very similar to the MSL-RAD detector on Mars, and the Fast Neutron Detector (FND), which is a boron-loaded plastic scintillator with readout optimized for the 0.5 to 10 MeV energy range. As the FND is completely new, it has been necessary to develop methodology to allow it to be used to measure the neutron dose and dose equivalent. This talk will focus on the methods developed and their implementation using calibration data obtained in quasi-monoenergetic (QMN) neutron fields at the PTB facility in Braunschweig, Germany. The QMN data allow us to determine an approximate response function, from which we estimate dose and dose equivalent contributions per detected neutron as a function of the pulse height. We refer to these as the "pSv per count" curves for dose equivalent and the "pGy per count" curves for dose. The FND is required to provide a dose equivalent measurement with an accuracy of ?10% of the known value in a calibrated AmBe field. Four variants of the analysis method were developed, corresponding to two different approximations of the pSv per count curve, and two different implementations, one for real-time analysis onboard ISS and one for ground analysis. We will show that the preferred method, when applied in either real-time or ground analysis, yields good accuracy for the AmBe field. We find that the real-time algorithm is more susceptible to chance-coincidence background than is the algorithm used in ground analysis, so that the best estimates will come from the latter.

A novel fast timing micropattern gaseous detector: FTM

CERN Document Server

De Oliveira, Rui; Sharma, Archana

2015-01-01

In recent years important progress in micropattern gaseous detectors has been achieved in the use of resistive material to build compact spark-protected devices. The novel idea presented here consists of the polarisation of WELL structures using only resistive coating. This allows a new device to be built with an architecture based on a stack of several coupled layers where drift and WELL multiplication stages alternate in the structure. The signals from each multiplication stage can be read out from any external readout boards through the capacitive couplings. Each layer provides a signal with a gain of 10^4-10^5. The main advantage of this new device is the dramatic improvement of the timing provided by the competition of the ionisation processes in the different drift regions, which can be exploited for fast timing at the high luminosity accelerators (e.g. HL-LHC upgrade) as well as far applications like medical imaging.

A novel fast timing micropattern gaseous detector: FTM

CERN Document Server

De Oliveira, Rui; Maggi, Marcello

2015-01-01

In recent years important progress in micropattern gaseous detectors has been achieved in the use of resistive material to build compact spark-protected devices. The novel idea presented here consists of the polarisation of WELL structures using only resistive electrodes. This allows a new device to be built with an architecture based on a stack of several coupled layers where drift and WELL multiplication stages alternate in the structure. The signals from each multiplication stage can be read out from any external readout boards through the capacitive couplings. Each layer provides a signal with a gain of 10^4 - 10^5. The main advantage of this new device is the dramatic improvement of the timing provided by the competition of the ionisation processes in the different drift regions, which can be exploited for fast timing at the high luminosity accelerators (e.g. HL-LHC upgrade) as well as applications outside particle physics.

Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

Directory of Open Access Journals (Sweden)

M. A. Matin

2013-01-01

Full Text Available This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures. A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 μm. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 μm. The proposed structure with As2Te3 BSF showed the highest conversion efficiency of 20.8% ( V,  mA/cm2, and . Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC of −0.3%/°C.

Application of polycrystalline diffusion barriers

International Nuclear Information System (INIS)

Tsymbal, V.A.; Kolupaev, I.N.

2010-01-01

Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi 2 ) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis diffusion permeability polycrystalline and polyphase DB is made and recommendations for practical methods of increase of blocking properties PDB are made.

Application of cadmium telluride detectors to high energy computed tomography

International Nuclear Information System (INIS)

Glasser, F.; Thomas, G.; Cuzin, M.; Verger, L.

1991-01-01

15 years ago, Cadmium Telluride detectors have been investigated in our laboratory as possible detectors for medical scanners [1]. Today most of these machines are using high pressure Xenon gas as multicells detectors, BGO or CdWO 4 scintillators for industrial computerized tomography. Xenon gas detectors are well suited for detection of 100 KeV X-rays and enables to build 1000 cells homogeneous detector with a dynamic range of 3 decades. BGO and CdWO 4 scintillators, associated with photomultipliers or photodiodes are used for higher energy (400 KeV). They present a low afterglow and a dynamic range of 4 to 5 decades. Non destructive testing of very absorbing objects (eg 2 m diameter solid rocket motor) by X-ray tomography requires much higher energy X-rays (16 MeV) and doses up to 12000 rads/min at 1 meter. For this application Cadmium Telluride detectors operating as photoconductors are well suited. A prototype of tomograph machine, able to scan 0.5 m diameter high density objects has been realized with 25 CdTe detectors (25x15x0.8 mm 3 ). It produces good quality 1024x1024 tomographic images

Ecotoxicity of CdTe quantum dots to freshwater mussels: Impacts on immune system, oxidative stress and genotoxicity

International Nuclear Information System (INIS)

Gagne, F.; Auclair, J.; Turcotte, P.; Fournier, M.; Gagnon, C.; Sauve, S.; Blaise, C.

2008-01-01

The purpose of this study was to examine the toxic effects of cadmium-telluride (CdTe) quantum dots on freshwater mussels. Elliption complanata mussels were exposed to increasing concentrations of CdTe (0, 1.6, 4 and 8 mg/L) and cadmium sulfate (CdSO 4 , 0.5 mg/L) for 24 h at 15 o C. After the exposure period, they were removed for assessments of immunocompetence, oxidative stress (lipid peroxidation) and genotoxicity (DNA strand breaks). Preliminary experiments revealed that CdTe dissolved in aquarium water tended to aggregate in the particulate phase (85%) while 15% of CdTe was found in the dissolved phase. Immunotoxicity was characterized by a significant decrease in the number of hemocytes capable of ingesting fluorescent beads, and hemocyte viability. The cytotoxic capacity of hemocytes to lyse mammalian K-562 cells was significantly increased, but the number of circulating hemocytes remained unchanged. Lipid peroxidation was significantly increased at a threshold concentration of 5.6 mg/L in gills and significantly reduced in digestive glands at a threshold concentration <1.6 mg/L CdTe. The levels of DNA strand breaks were significantly reduced in gills at <1.6 mg/L CdTe. In digestive glands, a transient but marginal increase in DNA strand breaks occurred at the lowest concentration and dropped significantly at the higher concentrations. A multivariate analysis revealed that the various response patterns differed based on the concentration of CdTe, thus permitting the identification of biomarkers associated with the form (colloidal vs. molecular) of cadmium

Ecotoxicity of CdTe quantum dots to freshwater mussels: Impacts on immune system, oxidative stress and genotoxicity

Energy Technology Data Exchange (ETDEWEB)

Gagne, F. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada)], E-mail: francois.gagne@ec.gc.ca; Auclair, J.; Turcotte, P. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada); Fournier, M. [INRS-Institut Armand-Frappier, 245 Hymus, Pointe-Claire, Quebec, H9R 3G6 (Canada); Gagnon, C. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada); Sauve, S. [Departement de Chimie, Universite de Montreal, C.P. 6128, Succursale Centre-ville, Montreal, Quebec, H3C 3J7 (Canada); Blaise, C. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada)

2008-02-18

The purpose of this study was to examine the toxic effects of cadmium-telluride (CdTe) quantum dots on freshwater mussels. Elliption complanata mussels were exposed to increasing concentrations of CdTe (0, 1.6, 4 and 8 mg/L) and cadmium sulfate (CdSO{sub 4}, 0.5 mg/L) for 24 h at 15 {sup o}C. After the exposure period, they were removed for assessments of immunocompetence, oxidative stress (lipid peroxidation) and genotoxicity (DNA strand breaks). Preliminary experiments revealed that CdTe dissolved in aquarium water tended to aggregate in the particulate phase (85%) while 15% of CdTe was found in the dissolved phase. Immunotoxicity was characterized by a significant decrease in the number of hemocytes capable of ingesting fluorescent beads, and hemocyte viability. The cytotoxic capacity of hemocytes to lyse mammalian K-562 cells was significantly increased, but the number of circulating hemocytes remained unchanged. Lipid peroxidation was significantly increased at a threshold concentration of 5.6 mg/L in gills and significantly reduced in digestive glands at a threshold concentration <1.6 mg/L CdTe. The levels of DNA strand breaks were significantly reduced in gills at <1.6 mg/L CdTe. In digestive glands, a transient but marginal increase in DNA strand breaks occurred at the lowest concentration and dropped significantly at the higher concentrations. A multivariate analysis revealed that the various response patterns differed based on the concentration of CdTe, thus permitting the identification of biomarkers associated with the form (colloidal vs. molecular) of cadmium.

Alanine and TLD coupled detectors for fast neutron dose measurements in neutron capture therapy (NCT)

Energy Technology Data Exchange (ETDEWEB)

Cecilia, A.; Baccaro, S.; Cemmi, A. [ENEA-FIS-ION, Casaccia RC, Via Anguillarese 301, 00060 Santa Maria di Galeria, Rome (Italy); Colli, V.; Gambarini, G. [Dept. of Physics of the Univ., INFN, Via Celoria 16, 20133 Milan (Italy); Rosi, G. [ENEA-FIS-ION, Casaccia RC, Via Anguillarese 301, 00060 Santa Maria di Galeria, Rome (Italy); Scolari, L. [Dept. of Physics of the Univ., INFN, Via Celoria 16, 20133 Milan (Italy)

2004-07-01

A method was investigated to measure gamma and fast neutron doses in phantoms exposed to an epithermal neutron beam designed for neutron capture therapy (NCT). The gamma dose component was measured by TLD-300 [CaF{sub 2}:Tm] and the fast neutron dose, mainly due to elastic scattering with hydrogen nuclei, was measured by alanine dosemeters [CH{sub 3}CH(NH{sub 2})COOH]. The gamma and fast neutron doses deposited in alanine dosemeters are very near to those released in tissue, because of the alanine tissue equivalence. Couples of TLD-300 and alanine dosemeters were irradiated in phantoms positioned in the epithermal column of the Tapiro reactor (ENEA-Casaccia RC). The dosemeter response depends on the linear energy transfer (LET) of radiation, hence the precision and reliability of the fast neutron dose values obtained with the proposed method have been investigated. Results showed that the combination of alanine and TLD detectors is a promising method to separate gamma dose and fast neutron dose in NCT. (authors)

A computational study on the energy bandgap engineering in performance enhancement of CdTe thin film solar cells

Directory of Open Access Journals (Sweden)

Ameen M. Ali

Full Text Available In this study, photovoltaic properties of CdTe thin film in the configuration of n-SnO2/n-CdS/p-CdTe/p-CdTe:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D. A modified structure for CdTe thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (CdTe:Te. This layer can serve as a barrier that will decelerate the copper diffusion in CdTe solar cell. Four estimated energy bandgap relations versus the Tellurium (Te concentrations and the (CdTe:Te layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established. Keywords: Numerical modelling, CdTe thin film, Solar cell, AMPS-1D, Bandgap

Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

Energy Technology Data Exchange (ETDEWEB)

Wielunski, L.S.; Kenny, M.J. [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

1993-12-31

Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

Energy Technology Data Exchange (ETDEWEB)

Wielunski, L S; Kenny, M J [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

1994-12-31

Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

Characterization of point defects in CdTe by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Elsharkawy, M. R. M. [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt); Kanda, G. S.; Keeble, D. J., E-mail: d.j.keeble@dundee.ac.uk [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Abdel-Hady, E. E. [Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt)

2016-06-13

Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

Directory of Open Access Journals (Sweden)

Choi Hyojeong

2016-09-01

Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

Determination of density and volumetric water content of soil at multiple photon energies

Energy Technology Data Exchange (ETDEWEB)

Un, A., E-mail: ademun25@yahoo.co [Department of Physics, Faculty of Science and Arts, Agri Ibrahim Cecen University, 04100 Agri (Turkey); Demir, D.; Sahin, Y. [Department of Physics, Faculty of Science, Atatuerk University, 25240 Erzurum (Turkey)

2011-08-15

Gamma ray transmission methods have been used accurately for the study of the properties of soil for agricultural purposes. In this study, density and volumetric water content of soil are determined by using gamma ray transmission method. To this end, the soil sample was collected from Erzurum, Turkey. The attenuation of strongly collimated monoenergetic gamma beam through the soil sample was measured using a 3x3x1 mm{sup 3} cadmium telluride (CdTe) detector. The radioactive sources used in the experiment were {sup 241}Am, {sup 133}Ba and {sup 137}Cs. The mass attenuation coefficients of dry soil sample were calculated from the transmission measurements. It was observed that gamma ray transmission method in measurement of the soil parameters with the portable CdTe detector has advantages such as practical, inexpensive, non-destructive and fast analysis.

Determination of density and volumetric water content of soil at multiple photon energies

International Nuclear Information System (INIS)

Un, A.; Demir, D.; Sahin, Y.

2011-01-01

Gamma ray transmission methods have been used accurately for the study of the properties of soil for agricultural purposes. In this study, density and volumetric water content of soil are determined by using gamma ray transmission method. To this end, the soil sample was collected from Erzurum, Turkey. The attenuation of strongly collimated monoenergetic gamma beam through the soil sample was measured using a 3x3x1 mm 3 cadmium telluride (CdTe) detector. The radioactive sources used in the experiment were 241 Am, 133 Ba and 137 Cs. The mass attenuation coefficients of dry soil sample were calculated from the transmission measurements. It was observed that gamma ray transmission method in measurement of the soil parameters with the portable CdTe detector has advantages such as practical, inexpensive, non-destructive and fast analysis.

Status of the R and D activity on diamond particle detectors

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Bellini, B.; Berdermann, E.; Bergonzo, P.; Boer, W. de; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M. E-mail: bruzzi@fi.infn.it; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Doroshenko, J.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fischer, P.; Fizzotti, F.; Furetta, C.; Gan, K.K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Karl, C.; Kass, R.; Keil, M.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Perera, L.; Pernicka, M.; Polesello, P.; Potenza, R.; Riester, J.L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M

2003-09-21

Chemical Vapor Deposited (CVD) polycrystalline diamond has been proposed as a radiation-hard alternative to silicon in the extreme radiation levels occurring close to the interaction region of the Large Hadron Collider. Due to an intense research effort, reliable high-quality polycrystalline CVD diamond detectors, with up to 270 {mu}m charge collection distance and good spatial uniformity, are now available. The most recent progress on the diamond quality, on the development of diamond trackers and on radiation hardness studies are presented and discussed.

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Fast-timing methods for semiconductor detectors

International Nuclear Information System (INIS)

Spieler, H.

1982-03-01

The basic parameters are discussed which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter