WorldWideScience

Sample records for fabricating semiconductor device

  1. Methods and devices for fabricating and assembling printable semiconductor elements

    Science.gov (United States)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2009-11-24

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  2. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2017-09-19

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  3. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2013-05-14

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  4. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Durham, NC; Lee, Keon Jae [Daejeon, KR; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Champaign, IL; Meitl, Matthew [Raleigh, NC; Zhu, Zhengtao [Urbana, IL

    2011-07-19

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  5. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Urbana, IL; Lee, Keon Jae [Savoy, IL; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Champaign, IL; Meitl, Matthew [Champaign, IL; Zhu, Zhengtao [Urbana, IL

    2009-11-24

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  6. Methods and devices for fabricating and assembling printable semiconductor elements

    Energy Technology Data Exchange (ETDEWEB)

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  7. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    Science.gov (United States)

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  8. Anodic bonded 2D semiconductors: from synthesis to device fabrication.

    Science.gov (United States)

    Chen, Zhesheng; Gacem, Karim; Boukhicha, Mohamed; Biscaras, Johan; Shukla, Abhay

    2013-10-18

    Two-dimensional semiconductors are increasingly relevant for emergent applications and devices, notably for hybrid heterostructures with graphene. We fabricate few-layer, large-area (a few tens of microns across) samples of the III-VI semiconductors GaS, GaSe and InSe using the anodic bonding method and characterize them by simultaneous use of optical microscopy, atomic force microscopy and Raman spectroscopy. Two-terminal devices with a gate are constructed to show the feasibility of applications based on these.

  9. Anodic bonded 2D semiconductors: from synthesis to device fabrication

    Science.gov (United States)

    Chen, Zhesheng; Gacem, Karim; Boukhicha, Mohamed; Biscaras, Johan; Shukla, Abhay

    2013-10-01

    Two-dimensional semiconductors are increasingly relevant for emergent applications and devices, notably for hybrid heterostructures with graphene. We fabricate few-layer, large-area (a few tens of microns across) samples of the III-VI semiconductors GaS, GaSe and InSe using the anodic bonding method and characterize them by simultaneous use of optical microscopy, atomic force microscopy and Raman spectroscopy. Two-terminal devices with a gate are constructed to show the feasibility of applications based on these.

  10. Zinc Alloys for the Fabrication of Semiconductor Devices

    Science.gov (United States)

    Ryu, Yungryel; Lee, Tae S.

    2009-01-01

    ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and

  11. Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

    Science.gov (United States)

    Sopori, Bhushan

    2014-05-27

    Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

  12. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  13. High-performance green semiconductor devices: materials, designs, and fabrication

    Science.gov (United States)

    Jung, Yei Hwan; Zhang, Huilong; Gong, Shaoqin; Ma, Zhenqiang

    2017-06-01

    From large industrial computers to non-portable home appliances and finally to light-weight portable gadgets, the rapid evolution of electronics has facilitated our daily pursuits and increased our life comforts. However, these rapid advances have led to a significant decrease in the lifetime of consumer electronics. The serious environmental threat that comes from electronic waste not only involves materials like plastics and heavy metals, but also includes toxic materials like mercury, cadmium, arsenic, and lead, which can leak into the ground and contaminate the water we drink, the food we eat, and the animals that live around us. Furthermore, most electronics are comprised of non-renewable, non-biodegradable, and potentially toxic materials. Difficulties in recycling the increasing amount of electronic waste could eventually lead to permanent environmental pollution. As such, discarded electronics that can naturally degrade over time would reduce recycling challenges and minimize their threat to the environment. This review provides a snapshot of the current developments and challenges of green electronics at the semiconductor device level. It looks at the developments that have been made in an effort to help reduce the accumulation of electronic waste by utilizing unconventional, biodegradable materials as components. While many semiconductors are classified as non-biodegradable, a few biodegradable semiconducting materials exist and are used as electrical components. This review begins with a discussion of biodegradable materials for electronics, followed by designs and processes for the manufacturing of green electronics using different techniques and designs. In the later sections of the review, various examples of biodegradable electrical components, such as sensors, circuits, and batteries, that together can form a functional electronic device, are discussed and new applications using green electronics are reviewed.

  14. Fabrication and performance of pressure-sensing device consisting of electret film and organic semiconductor

    Science.gov (United States)

    Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu

    2017-04-01

    We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.

  15. Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication.

    Science.gov (United States)

    Wang, Huaping; Yu, Gui

    2016-07-01

    Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication.

  16. Development and fabrication of improved power transistor switches. [fabrication and manufacturing of semiconductor devices

    Science.gov (United States)

    Hower, P. L.; Chu, C. K.

    1976-01-01

    A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

  17. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  18. Stretchable Organic Semiconductor Devices.

    Science.gov (United States)

    Qian, Yan; Zhang, Xinwen; Xie, Linghai; Qi, Dianpeng; Chandran, Bevita K; Chen, Xiaodong; Huang, Wei

    2016-11-01

    Stretchable electronics are essential for the development of intensely packed collapsible and portable electronics, wearable electronics, epidermal and bioimplanted electronics, 3D surface compliable devices, bionics, prosthesis, and robotics. However, most stretchable devices are currently based on inorganic electronics, whose high cost of fabrication and limited processing area make it difficult to produce inexpensive, large-area devices. Therefore, organic stretchable electronics are highly attractive due to many advantages over their inorganic counterparts, such as their light weight, flexibility, low cost and large-area solution-processing, the reproducible semiconductor resources, and the easy tuning of their properties via molecular tailoring. Among them, stretchable organic semiconductor devices have become a hot and fast-growing research field, in which great advances have been made in recent years. These fantastic advances are summarized here, focusing on stretchable organic field-effect transistors, light-emitting devices, solar cells, and memory devices.

  19. Device fabrication, characterization, and thermal neutron detection response of LiZnP and LiZnAs semiconductor devices

    Science.gov (United States)

    Montag, Benjamin W.; Ugorowski, Philip B.; Nelson, Kyle A.; Edwards, Nathaniel S.; McGregor, Douglas S.

    2016-11-01

    Nowotny-Juza compounds continue to be explored as candidates for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q-value of 4.78 MeV, larger than 10B, an energy easily identified above background radiations. Hence, devices fabricated from semiconductor compounds having either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) as constituent atoms may provide a material for compact high efficiency neutron detectors. Starting material was synthesized by preparing equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules lined with boron nitride and subsequently reacted in a compounding furnace [1]. The raw synthesized material indicated the presence high impurity levels (material and electrical property characterizations). A static vacuum sublimation in quartz was performed to help purify the synthesized material [2,3]. Bulk crystalline samples were grown from the purified material [4,5]. Samples were cut using a diamond wire saw, and processed into devices. Bulk resistivity was determined from I-V curve measurements, ranging from 106-1011 Ω cm. Devices were characterized for sensitivity to 5.48 MeV alpha particles, 337 nm laser light, and neutron sensitivity in a thermal neutron diffracted beam at the Kansas State University TRIGA Mark II nuclear reactor. Thermal neutron reaction product charge induction was measured with a LiZnP device, and the reaction product spectral response was observed.

  20. Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices

    OpenAIRE

    Sarwar, A. T. M. Golam; Carnevale, Santino D.; Yang, Fan; Kent, Thomas F.; Jamison, John J.; McComb, David W.; Myers, Roberto C.

    2015-01-01

    Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light emitting diodes (LEDs), lasers, solar cells and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial d...

  1. Unitary lens semiconductor device

    Science.gov (United States)

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  2. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  3. Fabrication of integrated metallic MEMS devices

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Ravnkilde, Jan Tue; Hansen, Ole

    2002-01-01

    A simple and complementary metal oxide semiconductor (CMOS) compatible fabrication technique for microelectromechanical (MEMS) devices is presented. The fabrication technology makes use of electroplated metal layers. Among the fabricated devices, high quality factor microresonators...

  4. Physics of semiconductor devices

    CERN Document Server

    Rudan, Massimo

    2015-01-01

    This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of s...

  5. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  6. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  7. Fabrication and Characterization of Edge-Emitting Semiconductor Lasers

    Science.gov (United States)

    Song, Junyeob

    The semiconductor laser was invented in 1962, and has recently become ubiquitous in modern life. This thesis focuses on the development of a semiconductor laser fabricating process which utilizes semiconductor manufacturing technology in a cleanroom environment including photolithography, etching, deposition, and bonding processes. A photomask for patterning is designed, recipes of photolithography process and etching process are developed with experiments. This work gives how to develop the process of fabrication and determine the parameters for each processes. A series of semiconductor laser devices are then fabricated using the developed process and characterization is performed to assess device performance with industrial standard methods. A fabricated device has 18W power and 11% conversion efficiency.

  8. Integration of carbon nanotubes with semiconductor technology: fabrication of hybrid devices by III–V molecular beam epitaxy

    DEFF Research Database (Denmark)

    Stobbe, Søren; Lindelof, P. E.; Nygård, J.

    2006-01-01

    on incorporation of singlewall nanotubes in III–V semiconductor heterostructures grown by molecular beam epitaxy (MBE). We demonstrate that singlewall carbon nanotubes can be overgrown using MBE; electrical contacts to the nanotubes are obtained by GaMnAs grown at 250 °C. The resulting devices can exhibit field......We review a number of essential issues regarding the integration of carbon nanotubes in semiconductor devices for electronics: material compatibility, electrical contacts, functionalities, circuit architectures and reliability. In the second part of the paper, we present our own recent results...

  9. SEMICONDUCTOR DEVICES Fabrication and characterization of an AlGaN/PZT detector

    Science.gov (United States)

    Yan, Zhang; Jinglan, Sun; Nili, Wang; Li, Han; Xiangyang, Liu; Xiangyang, Li; Xiangjian, Meng

    2010-12-01

    Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al0.3Ga0.7N/i-GaN/p-GaN/SiO2/LaNiO3/PZT/Pt fabricated on a sapphire substrate. Ultraviolet and infrared properties are measured. For the ultraviolet region, a flat band spectral response is achieved in the 302-363 nm band. The detector displays an unbiased responsivity of 0.064 A/W at 355 nm. The current-voltage curve shows that current at zero bias is -1.57 × 10-12 A. This led to a detectivity of 1.81 × 1011 cm · Hz1/2/W. In the infrared region, the detectivity of the detector is 1.58 × 105 cm · Hz1/2/W at 4 μm.

  10. Semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  11. Architectures for Improved Organic Semiconductor Devices

    Science.gov (United States)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  12. Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE

    Science.gov (United States)

    Takamatsu, Shingo; Nomura, Ichirou; Shiraishi, Tomohiro; Kishino, Katsumi

    2015-09-01

    N-doped p-type ZnTe and ZnSeTe contact layers were investigated to evaluate which is more suitable for use in II-VI compound semiconductor optical devices on InP substrates. Contact resistances (Rc) between the contact layers and several electrode materials (Pd/Pt/Au, Pd/Au, and Au) were measured by the circular transmission line model (c-TLM) method using p-n diode samples grown on InP substrates by molecular beam epitaxy (MBE). The lowest Rc (6.5×10-5 Ω cm2) was obtained in the case of the ZnTe contact and Pd/Pt/Au electrode combination, which proves that the combination is suitable for obtaining low Rc. Yellow light-emitting diode devices with a ZnTe and ZnSeTe p-contact layer were fabricated by MBE to investigate the effect of different contact layers. The devices were characterized under direct current injections at room temperature. Yellow emission at around 600 nm was observed for each device. Higher emission intensity and lower slope resistance were obtained for the device with the ZnTe contact layer and Pd/Pt/Au electrode compared with other devices. These device performances are ascribed to the low Rc of the ZnTe contact and Pd/Pt/Au electrode combination.

  13. Advanced Semiconductor Devices

    Science.gov (United States)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  14. Semiconductor-Free Nonvolatile Resistive Switching Memory Devices Based on Metal Nanogaps Fabricated on Flexible Substrates via Adhesion Lithography

    KAUST Repository

    Semple, James

    2017-01-02

    Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios >10⁴ and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

  15. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  16. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  17. Quantum Transport in Semiconductor Devices

    Science.gov (United States)

    1994-06-30

    TITLE AND SUBTITLE S. FUNDING NUMBERS " Quantum Transport in Semiconductor Devices" 6. AUTHOR(S) ,DftftLo3-91-6-oo 7 David K. Ferry 7. PERFORMING...OF ABSTRACT UNCLASSIFIED UNCLASSIFIED UNCLASSIFIED UL NZIN 1540-01-280-5500 Standard Form 298 (Rev 2-89) PrinCrlt>• oy ANSI SIC Z39-18 QUANTUM ... TRANSPORT IN SEMICONDUCTOR DEVICES Final Report on DAAL03-91-G-0067 (28461-EL) David K. Ferry, Principal Investigator Department of Electrical Engineering

  18. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications...

  19. Simulation of semiconductor devices

    CERN Document Server

    Oriato, D

    2001-01-01

    cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system. In chapter 6 an extensive simulation of the dependence of the optical band gap of a single InGaN quantum well on the piezoelectric and spontaneous polarization is reported. Quantum Confined Stark Effect and screening mechanisms are found to play a major role. The simulation of a novel InGaN/GaN double quantum well LED is presented. A wide well is used to capture electrons that tunnels in a narrow well where they recombine with holes. Resonant asymmetric tunneling of electron and holes is used to increase the efficie...

  20. Semiconductor devices having a recessed electrode structure

    Science.gov (United States)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  1. Wafer Fusion for Integration of Semiconductor Materials and Devices

    Energy Technology Data Exchange (ETDEWEB)

    Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Allerman, A.A.; Kravitz, S.; Follstaedt, D.M.; Hindi, J.J.

    1999-05-01

    We have developed a wafer fusion technology to achieve integration of semiconductor materials and heterostructures with widely disparate lattice parameters, electronic properties, and/or optical properties for novel devices not now possible on any one substrate. Using our simple fusion process which uses low temperature (400-600 C) anneals in inert N{sub 2} gas, we have extended the scope of this technology to examine hybrid integration of dissimilar device technologies. As a specific example, we demonstrate wafer bonding vertical cavity surface emitting lasers (VCSELs) to transparent AlGaAs and GaP substrates to fabricate bottom-emitting short wavelength VCSELs. As a baseline fabrication technology applicable to many semiconductor systems, wafer fusion will revolutionize the way we think about possible semiconductor devices, and enable novel device configurations not possible by epitaxial growth.

  2. CMOS MEMS Fabrication Technologies and Devices

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  3. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian

    2013-04-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.

  4. Semiconductor power devices physics, characteristics, reliability

    CERN Document Server

    Lutz, Josef; Scheuermann, Uwe; De Doncker, Rik

    2011-01-01

    Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are esse

  5. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  6. Analysis and simulation of semiconductor devices

    CERN Document Server

    Selberherr, Siegfried

    1984-01-01

    The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the s...

  7. SPM system for semiconductor device applications.

    Science.gov (United States)

    Itoh, Hiroshi; Odaka, Takahiro; Niitsuma, Junichi

    2014-11-01

    Recently, scanning probe microscopy (SPM) is widely used for development of semiconductor devices. One of the important functions of SPM is high resolution topography, such as shape of the nanoscale devices and surface roughness of the films. Additionally, SPM can measure the electronic structure of the nanoscale-devices. SPM system for thin films was developed to characterize the thin films for device applications.First, SPM system which can be apply short pulses to the sample holder is constructed to evaluate the electronic response of the thin film without using complex patterning on the Si wafer as shown in Fig. 1. Current design rule of the semiconductor devices is around 20 nm. The dimension of the devices are close to the probe radius of conductive SPM probes. The instrument was designed to characterize not only the static properties of nanoscale devices, but also the dynamic electronic properties. Shortest pulses which can be applied to the sample without destroying waveform were less than 50 nS. Time response of the current amplifier is ranging from 50 nS to 200 nS depending on the trans-impedance gains. The conditions (time and dimension) are similar to the active devices on the chip in the circuit. Thus, dynamic electronic properties of the thin films can be tested on a film without fabricating to the nanoscale devices. It is very helpful to optimizing the depositing conditions, such as sputtering parameters, of the thin film for semiconductor devices. For example, the system is used to optimize the film qualities for resistive memories [1].jmicro;63/suppl_1/i13-a/DFU091F1F1DFU091F1Fig. 1.Conductive probe microscopy, which is compatible to the pulse signals ranging to 50nS. The second function of the SPM system is the reproducible roughness measurement. Roughness of the film is also important for optimizing the depositing conditions of the thin film. Virtual reference probe method was developed for removing the variations of the SPM probes [2]. One of

  8. neutron-Induced Failures in semiconductor Devices

    Energy Technology Data Exchange (ETDEWEB)

    Wender, Stephen Arthur [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  9. Radiation-Hardness Data For Semiconductor Devices

    Science.gov (United States)

    Price, W. E.; Nichols, D. K.; Brown, S. F.; Gauthier, M. K.; Martin, K. E.

    1984-01-01

    Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

  10. Novel 1.3-micron high-speed directly modulated semiconductor laser device designs and the development of wafer bonding technology for compliant-substrate fabrication

    Science.gov (United States)

    Greenberg, Joseph

    2000-10-01

    High speed optical sources at 1.3 mum are required to drive the fiber optic infrastructure around the world. Of the three components that make up an optical link, these sources limit the overall data transmission capacity of these networks. The importance of operating at 1.3 mum, has led device engineers to rely on InP-based devices, though inferior in many ways to devices based on GaAs. This work seeks to develop new device designs to improve the directly modulated bandwidths of 1.3 mum lasers. Elevated temperatures degrade the DC and high speed performance of semiconductor lasers. InP-based devices are especially susceptible to temperature variations. Lasers were flip chip bonded to diamond heat sinks to improve heat removal from these devices. Although dramatic improvements were seen in their DC performance, the lasers' high frequency response did not improve. Other factors such, as carrier heating, likely limited the performance of these devices. Device designs on GaAs emitting at 1.3 mum were sought as a replacement for the troublesome InP devices. Laser structures employing ordered quantum wells on GaAs (111) substrates have been proposed. Theoretical calculations indicate that 1.3 mum emission should be achievable, and 1.55 mum emission may be possible. Experimental evidence from devices based on GaAs (111) indicates that such lasers should outperform their InP-based counterparts. Lasers grown on InGaAs-like substrates, either bulk ternary or compliant substrates, are promising candidates for improving 1.3 mum device performance. In anticipation of availability of such substrates, a toolkit for designing InxGa1--xAs quantum well lasers on InyGa 1--yAs substrates has been developed. The choice of well and substrate compositions, well width and desired percentage strain combinations emitting at 1.3 mum can be made using a few simple graphs. An analytical valence band model has been employed to qualitatively test competing device designs. Twist bonded compliant

  11. Nitride semiconductor devices fundamentals and applications

    CERN Document Server

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  12. Semiconductor nanoparticles for quantum devices

    Science.gov (United States)

    Erokhin, Victor; Carrara, Sandro; Amenitch, H.; Bernstorff, S.; Nicolini, Claudio

    1998-09-01

    Semiconductor nanoparticles were synthesized by exposing fatty acid salt Langmuir-Blodgett films to the atmosphere of 0957-4484/9/3/004/img8. The particle sizes were characterized by small-angle x-ray scattering of their solutions using synchrotron radiation source at higher resolution, as it was impossible previously to study it with usual laboratory x-ray sources. The particle sizes were found to correspond with the demands of single-electron and quantum junctions. Semiconductor heterostructures were grown by self-aggregation of these particles of different types. Electrical properties of these nanostructures were studied by using STM. Voltage-current characteristics revealed the presence of differential negative resistance. Measurements confirmed the formation of semiconductor superlattices directed towards a development of new nanodevices, such as tunnelling diodes and semiconductor lasers.

  13. Nano-semiconductors devices and technology

    CERN Document Server

    Iniewski, Krzysztof

    2011-01-01

    With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures--including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials--this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution

  14. SEMICONDUCTOR DEVICES: Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAs InP-based HEMT

    Science.gov (United States)

    Jie, Huang; Tianyi, Guo; Haiying, Zhang; Jingbo, Xu; Xiaojun, Fu; Hao, Yang; Jiebin, Niu

    2010-09-01

    A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In0 53Ga0 47As/In0 52Al0 48As InP-based HEMT, of which the material structure is successfully designed and optimized by our group. A 980 nm ultra-wide T-gate head, which is nearly as wide as 8 times the gatefoot (120 nm), is successfully obtained, and the excellent T-gate profile greatly reduces the parasitic resistance and capacitance effect and effectively enhances the RF performances. These fabricated devices demonstrate excellent DC and RF performances such as a maximum current gain frequency of 190 GHz and a unilateral power-gain gain frequency of 146 GHz.

  15. Methods for dry etching semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

    2016-11-01

    The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

  16. Graphene-semiconductor heterojunctions and devices

    Science.gov (United States)

    Ou, Tzu-Min

    on a semiconductor, resulting in a depletion region inside the semiconductor that induces a complementary charge in the graphene. Changing the reverse bias across the graphene-semiconductor junction modulates the depletion region width and thereby changes the total charge in graphene. The charge density of the graphene is also modulated by the doping density of the semiconductor substrate. The GJFET structure provides a solution for Dirac voltage tuning and back gate isolation by location-specific doping on a single device wafer. A detailed understanding of the device is obtained through the design, fabrication, and analysis of GJFETs with atmospheric pressure chemical-vapor deposited graphene on n-type Si and 4H-SiC substrates of various doping densities. A variable depletion width model is built to numerically simulate the performance. A representative n-Si (4.5x10 15 cm-3) GJFET exhibits an on-off ratio of 3.8, an intrinsic hole density of 8x1011 cm-2, and a Dirac voltage of 14.1 V. Fitting the transfer characteristic of the Si GJFET with our device model yields an electron and hole mobility of 300 and 1300 cm2/Vs respectively. The tunability of the threshold voltage by varying the substrate doping density is also demonstrated. With an increasing substrate doping from 8x1014 to 2x10 16 cm-3, the threshold of the Si GJFET decreases from 24.9 V to 3.8 V. With even higher doping density (5x1018 cm-3) in n+4H-SiC, the Dirac voltage of the GJFET is further reduced to 1.5 V. These results also demonstrate the feasibility of integrating GJFET with semiconductor substrates other than Si, widening their potential for use in high-frequency electronics.

  17. Stabilizing Semiconductor Devices With Hydrogen

    Science.gov (United States)

    Overhauser, Albert W.; Maserjian, Joseph

    1989-01-01

    Damage by radiation healed rapidly. Feature provides continuous, rapid recovery of devices from degradation caused by hot electrons, photons, and ionizing radiation. Several candidate sites for palladium film catalysts, inserted during manufacture as integral parts of devices. Paladium films made by evaporation, sputtering, or chemical-vapor deposition. If additional storage required, thick layer of palladium plated on inside of package surrounding device. Hydrogen stored by exposing palladium to hydrogen gas just before package sealed hermetically.

  18. Optical Regeneration and Noise in Semiconductor Devices

    DEFF Research Database (Denmark)

    Öhman, Filip

    2005-01-01

    In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

  19. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  20. Thermovoltaic semiconductor device including a plasma filter

    Science.gov (United States)

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  1. International Semiconductor Device Research Symposium (ISDRS-91)

    Science.gov (United States)

    Shur, Michael

    1992-03-01

    The First International Semiconductor Device Research Symposium (ISDRS-91) took place in Charlottesville, Va on December 4-6, 1991 for the purpose of providing a convenient forum for the exchange of information and new ideas for researchers from industry, university, and government laboratories with leading researchers from the United States, Canada, Europe, Asia, and the former Soviet Union. As the first international conference of its kind to take place after the August 1991 coup attempt in the Soviet Union, it was unique with the presence of an unusually large contingent of Russian scientists. The emphasis of the program was on novel ideas such as advanced semiconductor technologies still in their infancy whose tangible technological outcomes are not expected for another five to ten years. Some of the technologies discussed at the symposium included bandgap engineering, large area semiconductor electronics, new millimeter wave and opto-electronics technologies, and silicon carbide and diamond devices.

  2. Computational Intelligence Characterization Method of Semiconductor Device

    CERN Document Server

    Liau, Eric

    2011-01-01

    Characterization of semiconductor devices is used to gather as much data about the device as possible to determine weaknesses in design or trends in the manufacturing process. In this paper, we propose a novel multiple trip point characterization concept to overcome the constraint of single trip point concept in device characterization phase. In addition, we use computational intelligence techniques (e.g. neural network, fuzzy and genetic algorithm) to further manipulate these sets of multiple trip point values and tests based on semiconductor test equipments, Our experimental results demonstrate an excellent design parameter variation analysis in device characterization phase, as well as detection of a set of worst case tests that can provoke the worst case variation, while traditional approach was not capable of detecting them.

  3. Semiconductor devices for all-optical regeneration

    DEFF Research Database (Denmark)

    Öhman, Filip; Bischoff, Svend; Tromborg, Bjarne

    2003-01-01

    We review different implementations of semiconductor devices for all-optical regeneration. A general model will be presented for all-optical regeneration in fiber links, taking into consideration the trade-off between non-linearity and noise. Furthermore we discuss a novel regenerator type, based...

  4. All optical regeneration using semiconductor devices

    DEFF Research Database (Denmark)

    Mørk, Jesper; Öhman, Filip; Tromborg, Bjarne

    All-optical regeneration is a key functionality for implementing all-optical networks. We present a simple theory for the bit-error-rate in links employing all-optical regenerators, which elucidates the interplay between the noise and and nonlinearity of the regenerator. A novel device structure ...... is analyzed, emphasizing general aspects of active semiconductor waveguides....

  5. Development of solid state moisture sensors for semiconductor fabrication applications

    Energy Technology Data Exchange (ETDEWEB)

    Pfeifer, K.B.; Kelly, M.J.; Guilinger, T.R.; Peterson, D.W.; Sweet, J.N.; Tuck, M.R.

    1994-08-01

    We describe the design and fabrication of two types of solid state moisture sensors, and discuss the results of an evaluation of the sensors for the detection of trace levels of moisture in semiconductor process gases. The first sensor is based on surface acoustic wave (SAW) technology. A moisture sensitive layer is deposited onto a SAW device, and the amount of moisture adsorbed on the layer produces a proportional shift in the operating frequency of the device. Sensors based on this concept have excellent detection limits for moisture in inert gas (100 ppb) and corrosive gas (150 ppb in HCl). The second sensor is a simple capacitor structure that uses porous silicon as a moisture-sensitive dielectric material. The detection limits of these sensors for moisture in inert gas are about 700 ppb prior to HCl exposure, and about 7 ppm following HCl exposure.

  6. Progress in Group Ⅲ nitride semiconductor electronic devices

    Institute of Scientific and Technical Information of China (English)

    Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

    2012-01-01

    Recently there has been a rapid domestic development in group Ⅲ nitride semiconductor electronic materials and devices.This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China,which focuses on the research of the fundamental physical mechanisms of group Ⅲ nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials,develop new GaN heterostructures,and eventually achieve high performance GaN microwave power devices.Some remarkable progresses achieved in the program will be introduced,including those in GaN high electron mobility transistors (HEMTs) and metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators,and material growth,defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication,and quantum transport and spintronic properties ofGaN-based heterostructures,and highelectric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources.

  7. Hot carrier degradation in semiconductor devices

    CERN Document Server

    2015-01-01

    This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices.  Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance. • Describes the intricacies of hot carrier degradation in modern semiconductor technologies; • Covers the entire hot carrier degradation phenomenon, including topics such as characterization, carrier transport, carrier-defect interaction, technological impact, circuit impact, etc.; • Enables detailed understanding of carrier transport, interaction of the carrier ensemble with the defect precursors, and an accurate assessment of how the newly created defects imp...

  8. Blue/pink/purple electroluminescence from metal-oxide-semiconductor devices fabricated by spin-coating of [tantalum:(gadolinium/praseodymium)] and (praseodymium:cerium) organic compounds on silicon

    Science.gov (United States)

    Ohzone, Takashi; Matsuda, Toshihiro; Fukuoka, Ryouhei; Hattori, Fumihiro; Iwata, Hideyuki

    2016-08-01

    Blue/pink/purple electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with an indium tin oxide (ITO)/[Gd/(Ta + Gd/Pr)/(Pr + Ce)-Si-O] insulator layer/n+-Si substrate surface is reported. The insulator layers were fabricated from organic liquid sources of Gd or (Ta + Gd/Pr)/(Pr + Ce) mixtures, which were spin-coated on the n+-Si substrate and annealed at 950 °C for 30 min in air. The EL emission could be observed by the naked eye in the dark in the Fowler-Nordheim (FN) tunnel current regions. Peak wavelengths in the measured EL spectra were independent of the positive current. The EL intensity ratio of ultraviolet (UV) to the visible range varied with the composition ratio of the (Ta + Gd) liquids, and an optimum Ta to Gd ratio existed for the strongest blue emission, which could be attributed to the Ta-related oxide/silicate. The pink EL of the device fabricated with the (\\text{Ta}:\\text{Pr} = 6:4) mixture ratio can be explained by EL emission peaks related to the Pr3+ ions. The purple EL observed from the (\\text{Pr}:\\text{Ce} = 6:4) device corresponds to the strong and broad emission profile near the 357 nm peak, which cannot be assigned to Ce3+ ions. The results suggest that the EL can be attributed to the double-layer oxides with different compositions in the MOS devices. The upper layer consists of various Ta-, Gd-, Pr-, and Ce-related oxides and their silicates, while the lower SiO x -rich layer contributes to the FN current due to the high electric field, and thus the various EL colors.

  9. Methods of measurement for semiconductor materials, process control, and devices

    Science.gov (United States)

    Bullis, W. M. (Editor)

    1972-01-01

    Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

  10. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  11. Thin Film Compound Semiconductor Devices for Photonic Interconnects

    Science.gov (United States)

    Calhoun, Kenneth Harold

    The research conducted for this doctoral dissertation involved the experimental investigation of thin film compound devices for use as photonic interconnection components in both external and direct modulated interconnection configurations. The devices were fabricated using a modified epitaxial liftoff procedure developed at Georgia Tech. This technique, by which single crystal semiconductor layers were separated from their growth substrate and subsequently deposited onto host substrates, allowed the development of novel photonic interconnection elements. It also facilitated the investigation of fundamental optical phenomena in compound semiconductors. Specifically, this work focused on an experimental study of the Franz-Keldysh electrorefractive effect in thin film semiconductor structures. This aspect of the research resulted in the first reported direct measurement of electrorefraction in GaAs at large electric fields (10 ^5 V/cm) and at photon energies within several meV of the band edge of GaAs. Related to this effort was the investigation of thin film, surface-normal optical modulators based on the bulk Franz-Keldysh effect. The novel modulators fabricated for this research demonstrated the largest contrast ratios ever reported for surface-normal Franz-Keldysh devices. Further investigation indicated that, with additional optimization, these thin film elements can achieve further improvements in performance. Such devices would present a low cost, easily manufactured alternative to conventional modulators, which are typically quite complex and expensive to fabricate. Finally, as an alternative to externally modulated interconnection schemes, a novel stacked wafer architecture was demonstrated. This configuration, which facilitated through-wafer optical communication, utilized thin film InP/InGaAsP emitters and detectors which were quasi-monolithically integrated onto silicon substrates using the modified epitaxial liftoff process. This through-wafer scheme is

  12. EDITORIAL: Frontiers in semiconductor-based devices Frontiers in semiconductor-based devices

    Science.gov (United States)

    Krishna, Sanjay; Phillips, Jamie; Ghosh, Siddhartha; Ma, Jack; Sabarinanthan, Jayshri; Stiff-Roberts, Adrienne; Xu, Jian; Zhou, Weidong

    2009-12-01

    This special cluster of Journal of Physics D: Applied Physics reports proceedings from the Frontiers in Semiconductor-Based Devices Symposium, held in honor of the 60th birthday of Professor Pallab Bhattacharya by his former doctoral students. The symposium took place at the University of Michigan, Ann Arbor on 6-7 December 2009. Pallab Bhattacharya has served on the faculty of the Electrical Engineering and Computer Science Department at the University of Michigan, Ann Arbor for 25 years. During this time, he has made pioneering contributions to semiconductor epitaxy, characterization of strained heterostructures, self-organized quantum dots, quantum-dot optoelectronic devices, and integrated optoelectronics. Professor Bhattacharya has been recognized for his accomplishments by membership of the National Academy of Engineering, by chaired professorships (Charles M Vest Distinguished University Professor and James R Mellor Professor of Engineering), and by selection as a Fellow of the IEEE, among numerous other honors and awards. Professor Bhattacharya has also made remarkable contributions in education, including authorship of the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition) and the production of 60 PhD students (and counting). In fact, this development of critical human resources is one of the biggest impacts of Professor Bhattacharya's career. His guidance and dedication have shaped the varied professional paths of his students, many of whom currently enjoy successful careers in academia, industry, and government around the world. This special cluster acknowledges the importance of Professor Bhattacharya's influence as all of the contributions are from his former doctoral students. The symposium reflects the significant impact of Professor Bhattacharya's research in that the topics span diverse, critical research areas, including: semiconductor lasers and modulators, nanoscale quantum structure-based devices, flexible CMOS

  13. Molecular engineering of semiconductor surfaces and devices.

    Science.gov (United States)

    Ashkenasy, Gonen; Cahen, David; Cohen, Rami; Shanzer, Abraham; Vilan, Ayelet

    2002-02-01

    Grafting organic molecules onto solid surfaces can transfer molecular properties to the solid. We describe how modifications of semiconductor or metal surfaces by molecules with systematically varying properties can lead to corresponding trends in the (electronic) properties of the resulting hybrid (molecule + solid) materials and devices made with them. Examples include molecule-controlled diodes and sensors, where the electrons need not to go through the molecules (action at a distance), suggesting a new approach to molecule-based electronics.

  14. Compound Semiconductor Materials, Devices and Circuits

    Science.gov (United States)

    1988-06-01

    Semiconductors", L.A. Coldren, J.G. Mendoza - Alvarez and R.H. Yan, Aopl. Phys. Lett., 51, 792-794 (1987). JSEP PUBLICATIONS AND PRESENTATIONS 1. "Room...self-consistent Monte Carlo transport formulation and its applicat... to small graded heterostructure devices; (e) optical modulation based on the...L.F. Eastman 1 0 TASK 3 FUNDAMENTAL PHENOMENON IN ULTRASHORT DEVICES E.D. Wolf, L.F. Eastman and P.J. Tasker 1 9 TASK 4 ENSEMBLE MONTE CARLO

  15. Memory effects in a Al/Ti:HfO2/CuPc metal-oxide-semiconductor device

    Science.gov (United States)

    Tripathi, Udbhav; Kaur, Ramneek

    2016-05-01

    Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO2) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

  16. Memory effects in a Al/Ti:HfO{sub 2}/CuPc metal-oxide-semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Udbhav, E-mail: udbhav1781996@gmail.com; Kaur, Ramneek [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India)

    2016-05-23

    Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO{sub 2}) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

  17. Ultrafast optical signal processing using semiconductor optical devices

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther;

    2002-01-01

    We discuss the operation principles of semiconductor devices for ultrafast optical processing, emphasizing the physical processes affecting the device characteristics and the approaches taken to simulate these.......We discuss the operation principles of semiconductor devices for ultrafast optical processing, emphasizing the physical processes affecting the device characteristics and the approaches taken to simulate these....

  18. High voltage semiconductor devices and methods of making the devices

    Energy Technology Data Exchange (ETDEWEB)

    Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

    2017-02-28

    A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

  19. Physics and performance of nanoscale semiconductor devices at cryogenic temperatures

    Science.gov (United States)

    Balestra, F.; Ghibaudo, G.

    2017-02-01

    The physics and performance of various advanced semiconductor devices, which are the most promising for the end of the ITRS roadmap, are investigated in a wide temperature range down to 20 K. The transport parameters in front and/or back channels in fully depleted ultrathin film SOI devices, Trigate, FinFET, Omega-gate nanowire FET and 3D-stacked SiGe nanowire FETs, fabricated with high-k dielectrics/metal gate, elevated source/drain, different channel orientations, shapes and strains, are addressed. The impacts of the gate length, Si film and wire diameter down to 10 nm, are also shown. The variations of the phonon, Coulomb, neutral defects and surface roughness scattering as a function of temperature and device architecture are highlighted. An overview of the influence of temperature on other main electrical parameters of MOSFETs, nanowires FETs and tunnel FETs, such as threshold voltage, subthreshold swing, leakage and driving currents is also given.

  20. Semiconductor nanostructures for optoelectronic devices processing, characterization and applications

    CERN Document Server

    Yi, Gyu-Chul

    2012-01-01

    This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.

  1. Semiconductor Nanowires from Materials Science and Device Physics Perspectives

    Science.gov (United States)

    Samuelson, Lars

    2005-03-01

    Realization of extremely down-scaled devices gives tough challenges related to technology and materials science. One reason for the concern is that top-down fabricated nano-devices tend to have their properties dominated by process-induced damage, rendering ultra-small devices not so useful. Alternatively, bottom-up fabrication methods may allow dimensions on the scale even below 10 nm, still with superb device properties. I will in this talk describe our research on catalytically induced growth of semiconductor nanowires. Our method uses catalytic gold nanoparticles, allowing tight control of diameter as well as position of where the nanowire grows, with our work completely focused on epitaxially nucleated nanowires in which the nanowire structure can be seen as a coherent, monolithic extension of the crystalline substrate material. One of the most important achievements in this field of research is the realization of atomically abrupt heterostructures within nanowires, in which the material composition can be altered within only one or a few monolayers, thus allowing 1D heterostructure devices to be realized. This has allowed a variety of quantum devices to be realized, such as single-electron transistors, resonant tunneling devices as well as memory storage devices. A related recent field of progress has been the realization of ideally nucleated III-V nanowires on Si substrates, cases where we have also reported functioning III-V heterostructure device structures on Si. All of these device related challenges evolve from an improved understanding of the materials science involved in nucleation of nanowires, in altering of composition of the growing nanowire, in control of the growth direction etc. I will give examples of these materials science issues and will especially dwell on the opportunities to form new kinds of materials, e.g. as 3D complex nanowire structures, resembling nanotrees or nanoforests.

  2. SEMICONDUCTOR DEVICES: Humidity sensitive organic field effect transistor

    Science.gov (United States)

    Murtaza, I.; Karimov, Kh S.; Ahmad, Zubair; Qazi, I.; Mahroof-Tahir, M.; Khan, T. A.; Amin, T.

    2010-05-01

    This paper reports the experimental results for the humidity dependent properties of an organic field effect transistor. The organic field effect transistor was fabricated on thoroughly cleaned glass substrate, in which the junction between the metal gate and the organic channel plays the role of gate dielectric. Thin films of organic semiconductor copper phthalocynanine (CuPc) and semitransparent Al were deposited in sequence by vacuum thermal evaporation on the glass substrate with preliminarily deposited Ag source and drain electrodes. The output and transfer characteristics of the fabricated device were performed. The effect of humidity on the drain current, drain current-drain voltage relationship, and threshold voltage was investigated. It was observed that humidity has a strong effect on the characteristics of the organic field effect transistor.

  3. Functionalization of Semiconductor Nanomaterials for Optoelectronic Devices And Components

    Science.gov (United States)

    2015-03-04

    alternative for single quarter wavelength coating. Previous investigations on Ta2O5 include corrosion protection coating, electrochromic devices ...Functionalization of semiconductor nanomaterials for optoelectronic devices and components 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-10-1-0136 5c. PROGRAM...Distribution A 13. SUPPLEMENTARY NOTES None 14. ABSTRACT Various semiconductor nanomaterials were functionalized for optoelectronic devices , such

  4. Semiconductor devices incorporating multilayer interference regions

    Science.gov (United States)

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  5. Microwave Semiconductor Research - Materials, Devices, Circuits.

    Science.gov (United States)

    1982-04-30

    fabricated with I micron length gates, gate widths of 50-250 microns, and transconductances of 80-90 ms/mm. The processing sequence for the monolithic circuit...Ballantyne, invited seminar, Comsat Laboratories, 9 July, 1981. 4. " Monolithically Integrated Active Optical Devices", J. Ballantyne, D.K. Wagner, B...an optical Michelson interferometer with calibrated variable spacing in one arm. -. . . . .d* 34 This apparatus permits us to measure optical pulse

  6. Fabrication and Characterization of Nano-Optic Devices

    Science.gov (United States)

    2001-04-01

    FINAL 4. TITLE AND SUBTITLE 5. FUNDING NUMBERS FABRICATION AND CHARACTERIZATION OF NANO -OPTIC DEVICES 6. AUTHOR(S) PROFESSOR SCHERER 7. PERFORMING...has to be pumped to overcome lasing threshold. This compares to thousands of modes which have to be pumped in conventional semiconductor lasers in...lasers, advances in high speed lasers and detectors, low power micro -optical interconnects, and high efficiency LEDs for illumination and display

  7. Flexible non-volatile memory devices based on organic semiconductors

    Science.gov (United States)

    Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

    2015-09-01

    The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

  8. Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells

    Directory of Open Access Journals (Sweden)

    Ryosuke Motoyoshi

    2010-01-01

    Full Text Available Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS- based solar cells with titanium dioxide (TiO2 were produced on F-doped SnO2 (FTO. A device based on an FTO/CIS/TiO2 structure provided better cell performance compared to that based on FTO/TiO2/CIS structure. Cupric oxide- (CuO- and cuprous oxide- (Cu2O- based solar cells with fullerene (C60 were also fabricated on FTO and indium tin oxide (ITO. The microstructure and cell performance of the CuO/C60 heterojunction and the Cu2O:C60 bulk heterojunction structure were investigated. The photovoltaic devices based on FTO/CuO/C60 and ITO/Cu2O:C60 structures provided short-circuit current density of 0.015 mAcm−2 and 0.11 mAcm−2, and open-circuit voltage of 0.045 V and 0.17 V under an Air Mass 1.5 illumination, respectively. The microstructures of the active layers were examined by X-ray diffraction and transmission electron microscopy.

  9. Coated semiconductor devices for neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Klann, Raymond T. (Bolingbrook, IL); McGregor, Douglas S. (Whitmore Lake, MI)

    2002-01-01

    A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

  10. Transient electro-thermal modeling of bipolar power semiconductor devices

    CERN Document Server

    Gachovska, Tanya Kirilova; Du, Bin

    2013-01-01

    This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusio

  11. Physical limitations of semiconductor devices defects, reliability and esd protection

    CERN Document Server

    Vashchenko, V A

    2008-01-01

    Provides an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics. This title focuses on power semiconductor devices and self-triggering pulsed power devices for ESD protection clamps.

  12. Organic semiconductors as candidates for advanced optoelectronic devices:

    OpenAIRE

    Bratina, Gvido; Hudej, Robert

    2001-01-01

    Organic semiconductors are gaining an increasing attention due to their promise of novel optoelectronic devices. The main attraction of these materials stems from their potential integration with flexible materials, which would result in ultrathin flexible multicolor displays. Basic electronic properties of typical representatives of organic semiconductors are reviewed. The operation of a light-emitting device based on organic semiconductors is fundamentally different from its inorganic count...

  13. Advances in Rare Earth Application to Semiconductor Materials and Devices

    Institute of Scientific and Technical Information of China (English)

    屠海令

    2004-01-01

    The development of rare earths (RE) applications to semiconductor materials and devices is reviewed. The recent advances in RE doped silicon light emitting diodes (LED) and display materials are described. The various technologies of incorporating RE into semiconductor materials and devices are presented. The RE high dielectric materials, RE silicides and the phase transition of RE materials are also discussed. Finally, the paper describes the prospects of the RE application to semiconductor industry.

  14. A MICROGAP SURGE ABSORBER FABRICATED USING CONVENTIONAL SEMICONDUCTOR TECHNOLOGY

    Institute of Scientific and Technical Information of China (English)

    李宏; 阮航宇

    2001-01-01

    A new type microgap surge absorber fabricated by only semiconductor technique has in it a special structure silicon chip which forms microgaps for gas discharge with electrodes, and has advantages such as small size, low cost, suitability for mass production besides the desirable characteristics that common microgap surge absorbers have. Applications of this absorber in communication facilities are discussed.

  15. The Physics of Semiconductors An Introduction Including Devices and Nanophysics

    CERN Document Server

    Grundmann, Marius

    2006-01-01

    The Physics of Semiconductors provides material for a comprehensive upper-level-undergrauate and graduate course on the subject, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. For the interested reader some additional advanced topics are included, such as Bragg mirrors, resonators, polarized and magnetic semiconductors are included. Also supplied are explicit formulas for many results, to support better understanding. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from ...

  16. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-06-09

    We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.

  17. Photovoltaic healing of non-uniformities in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

    2006-08-29

    A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

  18. Iterative solution of the semiconductor device equations

    Energy Technology Data Exchange (ETDEWEB)

    Bova, S.W.; Carey, G.F. [Univ. of Texas, Austin, TX (United States)

    1996-12-31

    Most semiconductor device models can be described by a nonlinear Poisson equation for the electrostatic potential coupled to a system of convection-reaction-diffusion equations for the transport of charge and energy. These equations are typically solved in a decoupled fashion and e.g. Newton`s method is used to obtain the resulting sequences of linear systems. The Poisson problem leads to a symmetric, positive definite system which we solve iteratively using conjugate gradient. The transport equations lead to nonsymmetric, indefinite systems, thereby complicating the selection of an appropriate iterative method. Moreover, their solutions exhibit steep layers and are subject to numerical oscillations and instabilities if standard Galerkin-type discretization strategies are used. In the present study, we use an upwind finite element technique for the transport equations. We also evaluate the performance of different iterative methods for the transport equations and investigate various preconditioners for a few generalized gradient methods. Numerical examples are given for a representative two-dimensional depletion MOSFET.

  19. Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates

    Science.gov (United States)

    Norman, Andrew G; Ptak, Aaron J

    2013-08-13

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a') maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.

  20. One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

    Directory of Open Access Journals (Sweden)

    Shen Guozhen

    2009-01-01

    Full Text Available Abstract The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.

  1. Optical devices featuring textured semiconductor layers

    Science.gov (United States)

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  2. A Semiconductor Device Noise Model: A Deterministic Approach to Semiconductor Device Current Noise for Semiclassical Transport

    Science.gov (United States)

    Noaman, B. A.; Korman, C. E.

    2009-04-01

    In this paper, we present a deterministic approach to calculate terminal current noise characteristics in semiconductor devices in the framework of semiclassical transport based on the spherical harmonics of the Boltzmann Transport Equation. The model relies on the solution of the Boltzmann equation in the frequency domain with special initial and boundary conditions. The terminal current fluctuation is directly related to scattering without the additional Langevin noise term added to the calculation. Simulation results are presented for the terminal current spectral density for a 1-D n+nn+ structure due to elastic-acoustic and intervally scattering.

  3. Charge transport in nanoscale lateral and vertical organic semiconductor devices

    NARCIS (Netherlands)

    Xu, Bojian

    2017-01-01

    Organic semiconductors have been drawing more and more attention due to their huge potential for low-cost, flexible, printable electronics and spintronics. In this thesis research, we have investigated charge transport in two organic semiconductors, DXP and P3HT, in different device configurations.

  4. High density semiconductor nanodots by direct laser fabrication

    Science.gov (United States)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density is higher than the critical density above which detrimental large clumps begin to show up in the conventional Stranski-Krastanov growth technique. Atomic force microscopy is used to image the GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces.

  5. Frequency-domain thermal modelling of power semiconductor devices

    DEFF Research Database (Denmark)

    Ma, Ke; Blaabjerg, Frede; Andresen, Markus

    2015-01-01

    to correctly predict the device temperatures, especially when considering the thermal grease and heat sink attached to the power semiconductor devices. In this paper, the frequency-domain approach is applied to the modelling of thermal dynamics for power devices. The limits of the existing RC lump...

  6. Porous Microfluidic Devices - Fabrication adn Applications

    NARCIS (Netherlands)

    de Jong, J.; Geerken, M.J.; Lammertink, Rob G.H.; Wessling, Matthias

    2007-01-01

    The major part of microfluidic devices nowadays consists of a dense material that defines the fluidic structure. A generic fabrication method enabling the production of completely porous micro devices with user-defined channel networks is developed. The channel walls can be used as a (selective) bar

  7. Semiconductor terahertz technology devices and systems at room temperature operation

    CERN Document Server

    Carpintero, G; Hartnagel, H; Preu, S; Raisanen, A

    2015-01-01

    Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap".  This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Tempe

  8. Efficient semiconductor light-emitting device and method

    Science.gov (United States)

    Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

    1996-01-01

    A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

  9. Nitride Semiconductors Handbook on Materials and Devices

    CERN Document Server

    Ruterana, Pierre; Neugebauer, Jörg

    2003-01-01

    Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of t

  10. Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

    Science.gov (United States)

    Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

    2015-05-12

    A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

  11. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

    Science.gov (United States)

    Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2004-11-01

    Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material-namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)-for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10cm2V-1s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9cm2V-1s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

  12. 77 FR 19032 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same Notice of Receipt...

    Science.gov (United States)

    2012-03-29

    ...] [FR Doc No: 2012-7567] INTERNATIONAL TRADE COMMISSION [DN 2888] Certain Semiconductor Integrated... Certain Semiconductor Integrated Circuit Devices and Products Containing Same, DN 2888; the Commission is... importation of certain semiconductor integrated circuit devices and products containing same. The...

  13. Fabrication of Green Electroluminescent Devices

    Institute of Scientific and Technical Information of China (English)

    高德青; 黄春辉; 奎热西; 刘凤琴

    2002-01-01

    A gadolinium ternary complex, tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone) (2, 2′-dipyridyl) gadolinium Gd(PMIP)3(Bipy) was synthesized and used as a light emitting material in the organic electroluminescent devices. The devices exhibited the green electroluminescent (EL) emission peaking at 513 nm, originating from the Gd(PMIP)3(Bipy). By improving the configuration, the device with a structure of ITO/poly(N-vinylcarbazole) (PVK) (40 nm)/Gd(PMIP)3(Bipy) (40 nm)/tris (8-hydroxyquinoline) aluminum (ALQ) (40 nm)/Mg∶Ag(200 nm)/Ag(100 nm) showed higher performance and a maximum luminance of 340 cd*m-2 at 18 V.

  14. Simulation of neutron radiation damage in silicon semiconductor devices.

    Energy Technology Data Exchange (ETDEWEB)

    Shadid, John Nicolas; Hoekstra, Robert John; Hennigan, Gary Lee; Castro, Joseph Pete Jr.; Fixel, Deborah A.

    2007-10-01

    A code, Charon, is described which simulates the effects that neutron damage has on silicon semiconductor devices. The code uses a stabilized, finite-element discretization of the semiconductor drift-diffusion equations. The mathematical model used to simulate semiconductor devices in both normal and radiation environments will be described. Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for each of the defect species. Additionally, details are given describing how Charon can efficiently solve very large problems using modern parallel computers. Comparison between Charon and experiment will be given, as well as comparison with results from commercially-available TCAD codes.

  15. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  16. Fabrication of Optical Fiber Devices

    Science.gov (United States)

    Andres, Miguel V.

    In this paper we present the main research activities of the Laboratorio de Fibras Opticas del Instituto de Ciencia de los Materiales de la Universidad de Valencia. We show some of the main results obtained for devices based on tapered fibers, fiber Bragg gratings, acousto-optic effects and photonic crystal fibers.

  17. Design, Fabrication, and Characterization of Low - Quantum Devices

    Science.gov (United States)

    Chang, Hong

    The realization of a two-dimensional electron gas in semiconductor heterostructures due to advanced epitaxial growth techniques has led to novel high-speed devices such as modulation-doped field effect transistors and quantum well lasers. High resolution lithography and pattern transfer techniques now make it possible to further restrict the electronic motion to lower dimensions. A variety of interesting quantum confinement phenomena have been observed in these mesoscopic systems. This thesis describes the design principle, fabrication technique, and transport characterization of various low-dimensional quantum devices. Nanostructure fabrication techniques are presented in detail in the thesis, from high resolution electron beam lithography, pattern transfer techniques, to various one-dimensional (1D) and zero-dimensional (0D) structures with dimensions in the nanometer scale. The effective wire width as well as sidewall damage for both deep etched and shallow etched quantum wires are characterized by the electrical conductance measurement. Artificial lateral surface superlattice (LSSL) structures of line and dot arrays are fabricated using multilayer resist techniques. A typical 1D quantized conductance of rm 2e^2/h is shown in an airbridge split gate device. Plateaulike transport characteristics are demonstrated in airbridge LSSL gate devices due to electrostatic confinement modulation. Laterally tunable single-gate quantum dot and double-bend quantum dot devices are fabricated and investigated. Negative differential conductance is observed at various drain bias conditions in both of these quantum dot devices. Conductance oscillations observed at a temperature as high as 10 K are, to our understanding, the highest temperature reported in similar laterally confined quantum dot devices.

  18. Electrical contacts for a thin-film semiconductor device

    Science.gov (United States)

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1989-08-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  19. Nanostructured Semiconductor Device Design in Solar Cells

    Science.gov (United States)

    Dang, Hongmei

    We demonstrate the use of embedded CdS nanowires in improving spectral transmission loss and the low mechanical and electrical robustness of planar CdS window layer and thus enhancing the quantum efficiency and the reliability of the CdS-CdTe solar cells. CdS nanowire window layer enables light transmission gain at 300nm-550nm. A nearly ideal spectral response of quantum efficiency at a wide spectrum range provides an evidence for improving light transmission in the window layer and enhancing absorption and carrier generation in absorber. Nanowire CdS/CdTe solar cells with Cu/graphite/silver paste as back contacts, on SnO2/ITO-soda lime glass substrates, yield the highest efficiency of 12% in nanostructured CdS-CdTe solar cells. Reliability is improved by approximately 3 times over the cells with the traditional planar CdS counterpart. Junction transport mechanisms are delineated for advancing the basic understanding of device physics at the interface. Our results prove the efficacy of this nanowire approach for enhancing the quantum efficiency and the reliability in windowabsorber type solar cells (CdS-CdTe, CdS-CIGS and CdS-CZTSSe etc) and other optoelectronic devices. We further introduce MoO3-x as a transparent, low barrier back contact. We design nanowire CdS-CdTe solar cells on flexible foils of metals in a superstrate device structure, which makes low-cost roll-to-roll manufacturing process feasible and greatly reduces the complexity of fabrication. The MoO3 layer reduces the valence band offset relative to the CdTe, and creates improved cell performance. Annealing as-deposited MoO3 in N 2 reduces series resistance from 9.98 O/cm2 to 7.72 O/cm2, and hence efficiency of the nanowire solar cell is improved from 9.9% to 11%, which efficiency comparable to efficiency of planar counterparts. When the nanowire solar cell is illuminated from MoO 3-x /Au side, it yields an efficiency of 8.7%. This reduction in efficiency is attributed to decrease in Jsc from 25.5m

  20. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  1. Recent Developments in p-Type Oxide Semiconductor Materials and Devices.

    Science.gov (United States)

    Wang, Zhenwei; Nayak, Pradipta K; Caraveo-Frescas, Jesus A; Alshareef, Husam N

    2016-05-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  2. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  3. Handbook of compound semiconductors growth, processing, characterization, and devices

    CERN Document Server

    Holloway, Paul H

    1996-01-01

    This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

  4. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  5. The use of semiconductors in nonreciprocal devices for submillimeter wavelengths.

    Science.gov (United States)

    Hayes, R. E.; May, W. G.

    1971-01-01

    This paper reviews the use of anisotropic effects in a passive semiconductor magnetoplasma for the development of submillimeter isolators and circulators. The emphasis is on two schemes that are applicable over the far infrared portion of the spectrum. The theory of transmission devices depending on Faraday rotation is described, and experiments are discussed. At far infrared wavelengths it is not necessary to cool the semiconductor in order to achieve low forward loss. Some experimental results are available in this frequency range, and a theoretical evaluation of device performance is given. Reflection devices in which the desired signal does not propagate through the semiconductor, but is reflected off of its surface, are also discussed. Experimental results show that these devices can have a low forward loss; a variety of novel geometrical arrangements are able to improve isolator performance. Theoretical results indicating satisfactory performance for a far infrared isolator using InSb at room temperature are presented.

  6. Metallization and packaging of compound semiconductor devices at Sandia National Laboratories

    Energy Technology Data Exchange (ETDEWEB)

    Seigal, P.K.; Armendariz, M.G.; Rieger, D.J.; Lear, K.L.; Sullivan, C.T.

    1996-11-01

    Recent advances in compound semiconductor technology utilize a variety of metal thin films fabricated by thermal and electron-beam evaporation, and electroplating. An overview of metal processes used by Sandia`s Compound Semiconductor Research Laboratory is presented. Descriptions of electrical n-type and p-type ohmic contact alloys, interconnect metal, and metal layers specifically included for packaging requirements are addressed. Several illustrations of devices incorporating gold plated air bridges are included. ``Back-end`` processes such as flip-chip under bump metallurgy with fluxless solder reflow and plated solder processes are mentioned as current research areas.

  7. Semiconductor Material and Device Characterization, 3rd Edition

    Science.gov (United States)

    Schroder, Dieter K.

    2005-12-01

    Semiconductor Material and Device Characterizationis the only book on the market devoted to the characterization techniques used by the modern semiconductor industry to measure diverse semiconductor materials and devices. It covers the full range of electrical and optical characterization methods while thoroughly treating the more specialized chemical and physical techniques. In the third edition, Professor Schroder has rewritten parts of each chapter and added two new chapters (Charge Based Measurements and Failure Analysis and Reliability), redrawn and updated most figures, and included new problems and approximately 100 new references. * New end of chapter problems * Outdated figures have been redone and replaced with current data * Up-to-date bibliography with over 1400 references * Professor Schroder is recognized as the authority in the field of semiconductor characterization

  8. Hetero-junction photovoltaic device and method of fabricating the device

    Energy Technology Data Exchange (ETDEWEB)

    Aytug, Tolga; Christen, David K; Paranthaman, Mariappan Parans; Polat, Ozgur

    2014-02-10

    A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

  9. Femtosecond fabricated photomasks for fabrication of microfluidic devices.

    Science.gov (United States)

    Day, Daniel; Gu, Min

    2006-10-30

    This paper describes the direct write laser fabrication of a photolithography mask for prototyping of microfluidic devices in polydimethylsiloxane. An amplified femtosecond pulse laser is used to selectively remove the aluminium metal layer from the poly(methyl methacrylate) photomask substrate. The use of a femtosecond pulse laser to selectively etch a metal layer has several advantages over other conventional methods for binary photomask fabrication, namely rapid prototyping of microfluidic devices using soft lightography. Control of the energy density and defocus position of the focusing objective lens results in the etching of features with widths ranging from 2 microm to 35 microm when using an objective lens with numerical aperture of 0.25.

  10. Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features

    Directory of Open Access Journals (Sweden)

    M. Melvin David Kumar

    2014-01-01

    Full Text Available Metal/semiconductor and transparent conductive oxide (TCO/semiconductor heterojunctions have emerged as an effective modality in the fabrication of photoelectric devices. This review is following a recent shift toward the engineering of TCO layers and structured Si substrates, incorporating metal nanoparticles for the development of next-generation photoelectric devices. Beneficial progress which helps to increase the efficiency and reduce the cost, has been sequenced based on efficient technologies involved in making novel substrates, TCO layers, and electrodes. The electrical and optical properties of indium tin oxide (ITO and aluminum doped zinc oxide (AZO thin films can be enhanced by structuring the surface of TCO layers. The TCO layers embedded with Ag nanoparticles are used to enhance the plasmonic light trapping effect in order to increase the energy harvesting nature of photoelectric devices. Si nanopillar structures which are fabricated by photolithography-free technique are used to increase light-active surface region. The importance of the structure and area of front electrodes and the effect of temperature at the junction are the value added discussions in this review.

  11. Investigation of Ferromagnetic Semiconductor Devices for Spintronics

    Science.gov (United States)

    2010-05-01

    have demonstrated the first bipolar MJT using a magnetic semiconductor. For a InMnAs pnp transistor room temperature magneto-amplification is observed...have been already proposed using these materials. In particular the bipolar magnetic junction transistor (MJT) has been predicted to have unique...temperature operation of a InMnAs based bipolar magnetic junction transistor . Magnetoamplification is observed for the first time in a bipolar

  12. Molecular and polymeric organic semiconductors for applications in photovoltaic devices

    CERN Document Server

    Meinhardt, G

    2000-01-01

    Photovoltaic devices based on molecular as well as polymeric semiconductors were investigated and characterized. The organic materials presented here exhibit the advantages of low price, low processing costs and the possibility of tuning their optical properties. The photovoltaic properties were investigated by photocurrent action spectroscopy and I/V-characterization and the electric field distribution in each layer by electroabsorption spectroscopy. Single layer devices of molecular semiconductors and semiconducting polymers like methyl-substituted polyparaphenylene, CN-Ether-PPV, copper-phthalocyanine, the terryleneimide DOTer, the perylene derivatives BBP-perylene and polyBBP-perylene show low photocurrents as well as a small photovoltaic effect in their pristine form. One way to enhance the performance is to blend the active layer with molecular dopands like a soluble form of titaniumoxophthalocyanine or the aromatic macromolecule RS19 or to combine two organic semiconductors in heterostructure devices. ...

  13. III-V semiconductor devices integrated with silicon III-V semiconductor devices integrated with silicon

    Science.gov (United States)

    Hopkinson, Mark; Martin, Trevor; Smowton, Peter

    2013-09-01

    The integration of III-V semiconductor devices with silicon is one of the most topical challenges in current electronic materials research. The combination has the potential to exploit the unique optical and electronic functionality of III-V technology with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon. Key industrial drivers include the use of high mobility III-V channel materials (InGaAs, InAs, InSb) to extend the performance of Si CMOS, the unification of electronics and photonics by combining photonic components (GaAs, InP) with a silicon platform for next-generation optical interconnects and the exploitation of large-area silicon substrates and high-volume Si processing capabilities to meet the challenges of low-cost production, a challenge which is particularly important for GaN-based devices in both power management and lighting applications. The diverse nature of the III-V and Si device approaches, materials technologies and the distinct differences between industrial Si and III-V processing have provided a major barrier to integration in the past. However, advances over the last decade in areas such as die transfer, wafer fusion and epitaxial growth have promoted widespread renewed interest. It is now timely to bring some of these topics together in a special issue covering a range of approaches and materials providing a snapshot of recent progress across the field. The issue opens a paper describing a strategy for the epitaxial integration of photonic devices where Kataria et al describe progress in the lateral overgrowth of InP/Si. As an alternative, Benjoucef and Reithmaier report on the potential of InAs quantum dots grown direct onto Si surfaces whilst Sandall et al describe the properties of similar InAs quantum dots as an optical modulator device. As an alternative to epitaxial integration approaches, Yokoyama et al describe a wafer bonding approach using a buried oxide concept, Corbett

  14. Scanning probe characterization of novel semiconductor materials and devices

    Science.gov (United States)

    Zhou, Xiaotian

    As semiconductor devices shrink in size, it becomes more important to characterize and understand electronic properties of the materials and devices at the nanoscale. Scanning probe techniques offers numerous advantages over traditional tools used for semiconductor materials and devices characterization including high spatial resolution, ease of use and multi-functionality for electrical characterization, such as current, potential and capacitance, etc. In the first chapter, the basic principle of atomic force microscopy (AFM), and its application to characterization of semiconductor materials and devices are discussed. In the second part of the thesis, scanning capacitance microscopy (SCM), spectroscopy (SCS) and scanning Kelvin probe microscopy (SKPM) are used to investigate the structure and electronic properties of nitride based materials and devices, specifically doping in p-type GaN and electronic structure and morphology of InxGa1-xN/GaN quantum wells. In this work, AFM is used to characterize the local electronic structure in nitride thin film and heterostructures devices. In next part the thesis, AFM is used as an active part of the device, in conductive atomic force microscopy (C-AFM) and scanning gate microscopy (SGM), to study the transport properties and gating effect of InAs semiconductor nanowire based field effect transistor. This is made possible because the nanowire, as a potential one-dimension building block for high performance electronics and optoelectronics, has a diameter comparable to the size of AFM tips. In the last part of the thesis (appendix), SKPM is used to characterize semiconductor-like organic thin films, where measurements of the potential profile along the channel of an organic thin film transistor (OTFT) at different gate bias are presented to illustrate the unique transport property of such devices.

  15. Resistive field structures for semiconductor devices and uses therof

    Energy Technology Data Exchange (ETDEWEB)

    Marinella, Matthew; DasGupta, Sandeepan; Kaplar, Robert; Baca, Albert G.

    2017-09-12

    The present disclosure relates to resistive field structures that provide improved electric field profiles when used with a semiconductor device. In particular, the resistive field structures provide a uniform electric field profile, thereby enhancing breakdown voltage and improving reliability. In example, the structure is a field cage that is configured to be resistive, in which the potential changes significantly over the distance of the cage. In another example, the structure is a resistive field plate. Using these resistive field structures, the characteristics of the electric field profile can be independently modulated from the physical parameters of the semiconductor device. Additional methods and architectures are described herein.

  16. A semiconductor laser device employing optical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Tosikhiro, F.; Akimoto, S.; Katsuyuki, F.; Kun, I.

    1984-06-22

    A method is proposed for obtaining stable lasing parameters using a single longitudinal mode with reduced noise. This method involves reflecting a portion of the laser emission from the semiconductor laser back into the active region. An angular reflector with an angle other than a right angle is used. The laser emission which exits this end of the resonator is collimated by a lens into a parallel beam, which, when reflected off the angular reflector, strikes the lens at specific angles, and is focused at two points on this same end. This makes it possible to obtain single longitudinal mode lasing with significant submodal structure attenuation and a total absence of noise.

  17. Fabrication and characterization of gallium nitride electronic devices

    Science.gov (United States)

    Johnson, Jerry Wayne

    Gallium nitride (GaN)-based high electron mobility transistors (HEMTs), metal oxide semiconductor field effect transistors (MOSFETs), and Schottky rectifiers were fabricated and characterized. Novel dielectric materials Gd 2O3 and ScO were evaluated as potential gate dielectrics for GaN MOS applications. The devices presented herein show tremendous potential for elevated temperature, high frequency, and/or high voltage operation. AlGaN/GaN HEMTs were grown by MOCVD on sapphire and SiC substrates and by RF-MBE on sapphire substrates. Devices were fabricated with gate lengths from 100 nm to 1.2 mum. Drain current density approached 1 A/mm and extrinsic transconductance exceeded 200 mS/mm for small gate periphery devices. For the shortest gate length, a unity-gain cutoff frequency (fT) of 59 GHz and a maximum frequency of oscillation (fmax) of 90 GHz were extracted from measured scattering parameters. The experimental s-parameters were in excellent agreement with simulated results from small-signal linear modeling. Large signal characterization of 0.25 x 150 mum2 devices produced 2.75 W/mm at 3 GHz and 1.7 W/mm at 10 GHz. Devices fabricated on high thermal conductivity SiC substrates exhibited superior high temperature performance and a reduced density of threading dislocations. Novel gate dielectrics Gd2O3 and ScO were grown by gas source molecular beam epitaxy (GSMBE). Current-voltage (I-V) and capacitance-voltage (C-V) data were collected from MOS capacitors to evaluate the bulk and interfacial electrical properties of the insulators. Single crystal Gd2O 3 was demonstrated on GaN, but the resultant MOSFET exhibited a large gate leakage attributed to defects and dislocations in the oxide. MOSFETs with a stacked gate dielectric of Gd2O3/SiO2 were operational at a drain source bias of 80 V and a gate bias of +7 V. Bulk GaN templates grown by hydride vapor phase epitaxy (HYPE) were used to fabricate vertical geometry Schottky rectifiers. Size- and temperature

  18. Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices

    CERN Document Server

    Merten, K; Bulirsch, R

    1990-01-01

    Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in­ cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con­ nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues dis...

  19. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter

    2015-01-01

    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  20. Incorporating Contemporary Education Management Theories into Semiconductor Devices Course

    Institute of Scientific and Technical Information of China (English)

    刘春霞; 李垚

    2007-01-01

    Incorporation of contemporary education theories into semiconductor devices is suggested. According to the analysis of this course and link of theories of the old and new, I point out the importance of student-centered strategies such as workshop tutorial, problem-based learning & concept map, web-based learning etc. Detailed realizations of them are discussed.

  1. The world's first high voltage GaN-on-Diamond power semiconductor devices

    Science.gov (United States)

    Baltynov, Turar; Unni, Vineet; Narayanan, E. M. Sankara

    2016-11-01

    This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices.

  2. Template fabrication of highly ordered arrays of organic semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Heckel, Christian; Ostendorp, Stefan; Lei, Yong; Wilde, Gerhard [Institut fuer Materialphysik, Muenster (Germany)

    2011-07-01

    Porous alumina membrane (PAM) is a widely used template for the fabrication of highly ordered arrays of one-dimensional (1D) nanostructures. The structural parameters of the PAMs are adjustable, including the pore diameter and spacing, and the thickness of the membranes. And thus the structures of the 1D nanomaterials prepared using PAMs can be controlled. On the other hand, the investigation of organic semiconductors opens a new field of applications in computer technology like twistable displays or printing integrated circuits. In the current work, these two technologies are combined by depositing organic n-type semiconductors into the pores of PAMs using different synthesizing processes such as molecular evaporation and solution-phase self-assembly. As a result, highly ordered arrays of organic semiconducting wires are obtained within the pores with a diameter of about 50 nm, which indicates that it is possible to fill the pores with organic materials.The properties of these ''filled'' membranes are characterized by measuring the electrical properties of several nanowires pooled together and also of single nanowires by AFM-based methods.

  3. Release strategies for making transferable semiconductor structures, devices and device components

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J.

    2016-05-24

    Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  4. Release strategies for making transferable semiconductor structures, devices and device components

    Science.gov (United States)

    Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

    2014-11-25

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  5. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    Paul C. McIntyre

    2012-07-01

    Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  6. Electromagnetic radiation screening of semiconductor devices for long life applications

    Science.gov (United States)

    Hall, T. C.; Brammer, W. G.

    1972-01-01

    A review is presented of the mechanism of interaction of electromagnetic radiation in various spectral ranges, with various semiconductor device defects. Previous work conducted in this area was analyzed as to its pertinence to the current problem. The task was studied of implementing electromagnetic screening methods in the wavelength region determined to be most effective. Both scanning and flooding type stimulation techniques are discussed. While the scanning technique offers a considerably higher yield of useful information, a preliminary investigation utilizing the flooding approach is first recommended because of the ease of implementation, lower cost and ability to provide go-no-go information in semiconductor screening.

  7. Amphoteric oxide semiconductors for energy conversion devices: a tutorial review.

    Science.gov (United States)

    Singh, Kalpana; Nowotny, Janusz; Thangadurai, Venkataraman

    2013-03-07

    In this tutorial review, we discuss the defect chemistry of selected amphoteric oxide semiconductors in conjunction with their significant impact on the development of renewable and sustainable solid state energy conversion devices. The effect of electronic defect disorders in semiconductors appears to control the overall performance of several solid-state ionic devices that include oxide ion conducting solid oxide fuel cells (O-SOFCs), proton conducting solid oxide fuel cells (H-SOFCs), batteries, solar cells, and chemical (gas) sensors. Thus, the present study aims to assess the advances made in typical n- and p-type metal oxide semiconductors with respect to their use in ionic devices. The present paper briefly outlines the key challenges in the development of n- and p-type materials for various applications and also tries to present the state-of-the-art of defect disorders in technologically related semiconductors such as TiO(2), and perovskite-like and fluorite-type structure metal oxides.

  8. Molecular detection via hybrid peptide-semiconductor photonic devices

    Science.gov (United States)

    Estephan, E.; Saab, M.-b.; Martin, M.; Cloitre, T.; Larroque, C.; Cuisinier, F. J. G.; Malvezzi, A. M.; Gergely, C.

    2011-03-01

    The aim of this work was to investigate the possibilities to support device functionality that includes strongly confined and localized light emission and detection processes within nano/micro-structured semiconductors for biosensing applications. The interface between biological molecules and semiconductor surfaces, yet still under-explored is a key issue for improving biomolecular recognition in devices. We report on the use of adhesion peptides, elaborated via combinatorial phage-display libraries for controlled placement of biomolecules, leading to user-tailored hybrid photonic systems for molecular detection. An M13 bacteriophage library has been used to screen 1010 different peptides against various semiconductors to finally isolate specific peptides presenting a high binding capacity for the target surfaces. When used to functionalize porous silicon microcavities (PSiM) and GaAs/AlGaAs photonic crystals, we observe the formation of extremely thin (detection was monitored via both linear and nonlinear optical measurements. Our linear reflectance spectra demonstrate an enhanced detection resolution via PSiM devices, when functionalized with the Si-specific peptide. Molecular capture at even lower concentrations (femtomols) is possible via the second harmonic generation of GaAs/AlGaAs photonic crystals when functionalized with GaAs-specific peptides. Our work demonstrates the outstanding value of adhesion peptides as interface linkers between semiconductors and biological molecules. They assure an enhanced molecular detection via both linear and nonlinear answers of photonic crystals.

  9. Physical models of semiconductor quantum devices

    CERN Document Server

    Fu, Ying

    2013-01-01

    The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.

  10. NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices

    CERN Document Server

    Ferry, David; Jacoboni, C

    1988-01-01

    The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES...................

  11. Fabrication of gravity-driven microfluidic device

    Science.gov (United States)

    Yamada, H.; Yoshida, Y.; Terada, N.; Hagihara, S.; Komatsu, T.; Terasawa, A.

    2008-12-01

    We have studied the micro total analysis system as a blood test. A microfluidic device with a three-pronged microchannel and artificial capillary vessels was fabricated. The microchannel is to transport blood, focus blood cells, and line them up. The vessels are to observe red blood cell deformation. An excimer laser was used to form grooves and so on. Numbers of thermosetting resin film and fluororesin were piled up on a cover glass. A laser fabricated part of the channel at the each film every lamination, and then a three-dimensional structure microchannel was fabricated. The channel sizes have widths of 50-150 μm and depths of 45 μm. Through holes used as artificial capillary vessels are made in the fluororesin having a minimum diameter of 5 μm and a length of 100 μm. As blood and a physiological saline are injected into the microchannel, the device stands upward facing the channel, and blood cells go into the vessels by the force of gravity and sheath flow of the saline. By gravity various groove patterns were made changing the width and length for measurement of blood focusing. Moreover, the red blood cell deformation was observed in the vessels with a microscope.

  12. Optimization of semiconductor quantum devices by evolutionary search.

    Science.gov (United States)

    Goldoni, G; Rossi, F

    2000-07-15

    A novel simulation strategy is proposed for searching for semiconductor quantum devices that are optimized with respect to required performances. Based on evolutionary programming, a technique that implements the paradigm of genetic algorithms in more-complex data structures than strings of bits, the proposed algorithm is able to deal with quantum devices with preset nontrivial constraints (e.g., transition energies, geometric requirements). Therefore our approach allows for automatic design, thus avoiding costly by-hand optimizations. We demonstrate the advantages of the proposed algorithm through a relevant and nontrivial application, the optimization of a second-harmonic-generation device working in resonance conditions.

  13. Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield

    Science.gov (United States)

    Connors, Michael K.; Millsapp, Jamal E.; Turner, George W.

    2016-06-01

    The quality and yield of GaAs-based ridge waveguide devices fabricated at MIT Lincoln Laboratory were negatively impacted by the random lot-to-lot appearance of blisters in the front-side contact metal. The blisters signaled compromised adhesion between the front-side contact metal, underlying SiO2 dielectric coating, and semiconductor surface. A thermal-anneal procedure developed for the fabrication of GaAs slab coupled optical waveguide (SCOW) ridge waveguide devices stabilizes the SiO2 dielectric coating by means of outgassing and stress reduction. This process eliminates a primary source of adhesion loss, as well as blister generation, and thereby significantly improves device yield. Stoney's equation was used to analyze stress-induced bow in device wafers fabricated using this stabilization procedure. This analysis suggests that changes in wafer bow contribute to the incidence of metal blisters in SCOW devices.

  14. Screenable contact structure and method for semiconductor devices

    Science.gov (United States)

    Ross, Bernd

    1980-08-26

    An ink composition for deposition upon the surface of a semiconductor device to provide a contact area for connection to external circuitry is disclosed, the composition comprising an ink system containing a metal powder, a binder and vehicle, and a metal frit. The ink is screened onto the semiconductor surface in the desired pattern and is heated to a temperature sufficient to cause the metal frit to become liquid. The metal frit dissolves some of the metal powder and densifies the structure by transporting the dissolved metal powder in a liquid sintering process. The sintering process typically may be carried out in any type of atmosphere. A small amount of dopant or semiconductor material may be added to the ink systems to achieve particular results if desired.

  15. Semiconductor optoelectronic devices for free-space optical communications

    Science.gov (United States)

    Katz, J.

    1983-01-01

    The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

  16. Integrating nanosphere lithography in device fabrication

    Science.gov (United States)

    Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

    2016-03-01

    This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

  17. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    Science.gov (United States)

    Al-shurman, Khaled

    Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors. The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an urgent need for a new platform material to replace Si. Graphene is considered a promising material with enormous potential applications in many electronic and optoelectronics devices due to its superior properties. There are several techniques to produce graphene films. Among these techniques, chemical vapor deposition (CVD) offers a very convenient method to fabricate films for large-scale graphene films. Though CVD method is suitable for large area growth of graphene, the need for transferring a graphene film to silicon-based substrates is required. Furthermore, the graphene films thus achieved are, in fact, not single crystalline. Also, graphene fabrication utilizing Cu and Ni at high growth temperature contaminates the substrate that holds Si CMOS circuitry and CVD chamber as well. So, lowering the deposition temperature is another technological milestone for the successful adoption of graphene in integrated circuits fabrication. In this research, direct large-scale graphene film fabrication on silicon based platform (i.e. SiO2 and Si3N4) at low temperature was achieved. With a focus on low-temperature graphene growth, hot-filament chemical vapor deposition (HF-CVD) was utilized to synthesize graphene film using 200 nm thick nickel film. Raman spectroscopy was utilized to examine graphene formation on the bottom side of the Ni film

  18. Microwave impedance imaging on semiconductor memory devices

    Science.gov (United States)

    Kundhikanjana, Worasom; Lai, Keji; Yang, Yongliang; Kelly, Michael; Shen, Zhi-Xun

    2011-03-01

    Microwave impedance microscopy (MIM) maps out the real and imaginary components of the tip-sample impedance, from which the local conductivity and dielectric constant distribution can be derived. The stray field contribution is minimized in our shielded cantilever design, enabling quantitative analysis of nano-materials and device structures. We demonstrate here that the MIM can spatially resolve the conductivity variation in a dynamic random access memory (DRAM) sample. With DC or low-frequency AC bias applied to the tip, contrast between n-doped and p-doped regions in the dC/dV images is observed, and p-n junctions are highlighted in the dR/dV images. The results can be directly compared with data taken by scanning capacitance microscope (SCM), which uses unshielded cantilevers and resonant electronics, and the MIM reveals more information of the local dopant concentration than SCM.

  19. A modeling method of semiconductor fabrication flows with extended knowledge hybrid Petri nets

    Institute of Scientific and Technical Information of China (English)

    Zhou Binghai; Jiang Shuyu; Wang Shijin; Wu bin

    2008-01-01

    A modeling method of extended knowledge hybrid Petri nets (EKHPNs), incorporating object-oriented methods into hybrid Petri nets (HPNs), was presented and used for the representation and modeling of semiconductor wafer fabrication flows. To model the discrete and continuous parts of a complex semiconductor wafer fabrication flow, the HPNs were introduced into the EKHPNs. Object-oriented methods were combined into the EKHPNs for coping with the complexity of the fabrication flow. Knowledge annotations were introduced to solve input and output conflicts of the EKHPNs.Finally, to demonstrate the validity of the EKHPN method, a real semiconductor wafer fabrication case was used to illustrate the modeling procedure. The modeling results indicate that the proposed method can be used to model a complex semiconductor wafer fabrication flow expediently.

  20. Fabrication and Characterization of MWCNT-Based Bridge Devices

    KAUST Repository

    Chappanda, Karumbaiah N.

    2017-08-21

    Carbon nanotubes (CNTs) are one of the most actively researched structural materials due to their interesting electrical, mechanical, and chemical properties. Unlike single walled carbon nanotubes (SWCNTs), little work has been focused on multi-walled carbon nanotubes (MWCNTs) and their potential for practical devices. Here, we have fabricated bridge-shape devices integrating MWCNTs (> 50 nm in outer diameter) using three processes: optical lithography, electron beam-induced platinum deposition, and surface micromachining. Each device consists of a doubly-clamped nanotube suspended over gold electrodes on a highly conductive Si substrate. The suspended nanotubes are characterized individually using Raman spectroscopy and semiconductor parameters analysis and, overall, show, high crystallinity and low electrical resistance. The spring constants of doubly-clamped nanotubes were characterized using atomic force microscopy force-displacement measurements, with values as high as 70 N/m observed. Highly stiff MWCNTs are promising for a variety of applications, such as resonators and electrical interconnects. Through simulations, we estimate the resonance frequencies and pull-in voltages of these suspended nano-structures. The dependence of key parameters, such as the nanotube\\'s length, Young\\'s modulus, axial stress, and wall thickness is also discussed.

  1. Optical devices combining an organic semiconductor crystal with a two-dimensional inorganic diffraction grating

    Energy Technology Data Exchange (ETDEWEB)

    Kitazawa, Takenori; Yamao, Takeshi, E-mail: yamao@kit.ac.jp; Hotta, Shu [Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

    2016-02-01

    We have fabricated optical devices using an organic semiconductor crystal as an emission layer in combination with a two-dimensional (2D) inorganic diffraction grating used as an optical cavity. We formed the inorganic diffraction grating by wet etching of aluminum-doped zinc oxide (AZO) under a 2D cyclic olefin copolymer (COC) diffraction grating used as a mask. The COC diffraction grating was fabricated by nanoimprint lithography. The AZO diffraction grating was composed of convex prominences arranged in a triangular lattice. The organic crystal placed on the AZO diffraction grating indicated narrowed peaks in its emission spectrum under ultraviolet light excitation. These are detected parallel to the crystal plane. The peaks were shifted by rotating the optical devices around the normal to the crystal plane, which reflected the rotational symmetries of the triangular lattice through 60°.

  2. Simulating charge transport in organic semiconductors and devices: a review

    Science.gov (United States)

    Groves, C.

    2017-02-01

    Charge transport simulation can be a valuable tool to better understand, optimise and design organic transistors (OTFTs), photovoltaics (OPVs), and light-emitting diodes (OLEDs). This review presents an overview of common charge transport and device models; namely drift-diffusion, master equation, mesoscale kinetic Monte Carlo and quantum chemical Monte Carlo, and a discussion of the relative merits of each. This is followed by a review of the application of these models as applied to charge transport in organic semiconductors and devices, highlighting in particular the insights made possible by modelling. The review concludes with an outlook for charge transport modelling in organic electronics.

  3. Short time die attach characterisation of semiconductor devices

    CERN Document Server

    Szabo, P

    2008-01-01

    Thermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this layer may cause higher temperature elevation and thus damage or shorter lifetime. Thermal test of each device in the manufacturing process would be the best solution for eliminating the devices with wrong die attach layer. In this paper we will present the short time thermal transient measurement method and the structure function evaluation through simulations and measurements for die attach characterization. We will also present a method for eliminating the very time consuming calibration process. Using the proposed methods even the in-line testing of LEDs can be accomplished.

  4. 77 FR 25747 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of...

    Science.gov (United States)

    2012-05-01

    ... COMMISSION Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of... the sale within the United States after importation of certain semiconductor integrated circuit... semiconductor integrated circuit devices and products containing same that infringe one or more of claims 1,...

  5. An integrated semiconductor device enabling non-optical genome sequencing.

    Science.gov (United States)

    Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

    2011-07-20

    The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

  6. Microscopic theory of semiconductor-based optoelectronic devices

    Science.gov (United States)

    Iotti, Rita C.; Rossi, Fausto

    2005-11-01

    Since the seminal paper by Esaki and Tsu, semiconductor-based nanometric heterostructures have been the subject of impressive theoretical and experimental activity due to their high potential impact in both fundamental research and device technology. The steady scaling down of typical space and time scales in quantum optoelectronic systems inevitably leads to a regime in which the validity of the traditional Boltzmann transport theory cannot be taken for granted and a more general quantum-transport description is imperative. In this paper, we shall review state-of-the-art approaches used in the theoretical modelling, design and optimization of optoelectronic quantum devices. The primary goal is to provide a cohesive treatment of basic quantum-transport effects, able to explain and predict the performances of new-generation semiconductor devices. With this aim, we shall review and discuss a fully three-dimensional microscopic treatment of time-dependent as well as steady-state quantum-transport phenomena, based on the density matrix formalism. This will allow us to introduce in a quite natural way the separation between coherent and incoherent processes. Starting with this general theoretical framework, we shall analyse two different types of quantum devices, namely periodically repeated structures and quantum systems with open boundaries. For devices within the first class, we will show how a proper use of periodic boundary conditions allows us to reproduce and predict their current-voltage characteristics without resorting to phenomenological parameters. For the second class of devices, we will address the relevant issue of a quantum treatment of charge transport in systems with open boundaries (electrical contacts) when studying and simulating an at least two-terminal device.

  7. Physical modeling of semiconductor heterodimensional devices for photodetector applications

    Science.gov (United States)

    Tait, Gregory B.; Nabet, Bahram

    2004-06-01

    Efforts to exploit reduced dimensionality systems in semiconductor devices are presently driven by the continuing need to improve speed performance, transport efficiency, device density, and power management. In this work, we investigate the performance of novel GaAs/AlGaAs and InGaAs/InAlAs heterostructures for high-speed photodetector devices. First, a modulation-doped AlGaAs/GaAs device, suitable for monolithic integration with planar HEMT and FET devices, produces a built-in electric field that aids in the high-speed collection of photogenerated carriers. Surface Schottky electrodes on this structure form a planar interdigitated metal-semiconductor-metal (MSM) device for use at 850-nm wavelength. A second structure, an InGaAs/InAlAs quantum-well MSM photodetector for use at 1550-nm wavelength, utilizes recessed electrodes to contact directly the two-dimensional (2D) transport channel. Unfortunately, rather low Schottky barrier heights on undoped InGaAs lead to excessive dark currents when metal contacts are deposited directly on this material. To remedy this situation, we propose to form barrier-enhancement regions between the optically active 2D-quantum well and the lateral 3D-metal contacts by means of ion-implantation-induced quantum-well intermixing. Results indicate a reduction in dark current of nearly three orders of magnitude. Additionally, the high-speed performance appears not to be adversely affected under normal operating conditions by the potentially deleterious effects of carrier emission and accumulation at these heterojunction interfaces. The Fourier transform of a simulated transient current response to a light impulse indicates an electrical 3-dB bandwidth in excess of 50 GHz in a device with a recessed electrode gap of 1 μm.

  8. Semiconductor ferroelectric compositions and their use in photovoltaic devices

    Science.gov (United States)

    Rappe, Andrew M; Davies, Peter K; Spanier, Jonathan E; Grinberg, Ilya; West, Don Vincent

    2016-11-01

    Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

  9. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    Energy Technology Data Exchange (ETDEWEB)

    Chamorovskiy, A Yu; Okhotnikov, Oleg G [Optoelectronics Research Center, Tampere University of Technology, Tampere (Finland)

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  10. Sub-10 nm device fabrication in a transmission electron microscope.

    Science.gov (United States)

    Fischbein, Michael D; Drndić, Marija

    2007-05-01

    We show that a high-resolution transmission electron microscope can be used to fabricate metal nanostructures and devices on insulating membranes by nanosculpting metal films. Fabricated devices include nanogaps, nanodiscs, nanorings, nanochannels, and nanowires with tailored curvatures and multi-terminal nanogap devices with nanoislands or nanoholes between the terminals. The high resolution, geometrical flexibility, and yield make this fabrication method attractive for many applications including nanoelectronics and nanofluidics.

  11. Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology

    Institute of Scientific and Technical Information of China (English)

    Wang Wei; Huang Bei-Ju; Dong Zan; Chen Hong-Da

    2011-01-01

    A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

  12. 77 FR 60721 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Notice of...

    Science.gov (United States)

    2012-10-04

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Notice of... importation, and the sale within the United States after importation of certain semiconductor...

  13. 77 FR 39510 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Determination Not...

    Science.gov (United States)

    2012-07-03

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Determination Not... the sale within the United States after importation of certain semiconductor integrated...

  14. Irradiation damages of semiconductor devices and their improvement

    Energy Technology Data Exchange (ETDEWEB)

    Uwatoko, Yoshiya [Saitama Univ., Urawa (Japan); Ohyama, Hidenori; Hayama, Kiyoteru; Hakata, Tetsuya; Kudou, Tomohiro

    1998-01-01

    In this study, effect of radiation on semiconductor devices was evaluated at both sides of electrical and crystalline properties for two years from 1995 fiscal years. And, damage of Si(sub 1-x)Ge(sub x) device was considered at viewpoints of Ge content and sprung-out atomic number and non ionization energy loss of constituting atom formed by radiation on its radiation source dependency of damage. This paper was a report on proton beam damage of the Si(sub 1-x)Ge(sub x) device, neutron damage of InGaAs photodiode, and effect of Ga content and kinds of beam on their damages. (G.K.)

  15. Theory of semiconductor junction devices a textbook for electrical and electronic engineers

    CERN Document Server

    Leck, J H

    1967-01-01

    Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

  16. Irradiation damage of SiC semiconductor device (I)

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2000-09-01

    This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

  17. Systems and methods for scalable perovskite device fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Jinsong; Dong, Qingfeng; Sao, Yuchuan

    2017-02-28

    Continuous processes for fabricating a perovskite device are described that include using a doctor blade for continuously forming a perovskite layer and using a conductive tape lamination process to form an anode or a cathode layer on the perovskite device.

  18. Novel planarization and passivation in the integration of III-V semiconductor devices

    Science.gov (United States)

    Zheng, Jun-Fei; Hanberg, Peter J.; Demir, Hilmi V.; Sabnis, Vijit A.; Fidaner, Onur; Harris, James S., Jr.; Miller, David A. B.

    2004-06-01

    III-V semiconductor devices typically use structures grown layer-by-layer and require passivation of sidewalls by vertical etching to reduce leakage current. The passivation is conventionally achieved by sealing the sidewalls using polymer and the polymer needs to be planarized by polymer etch-back method to device top for metal interconnection. It is very challenging to achieve perfect planarization needed for sidewalls of all the device layers including the top layer to be completely sealed. We introduce a novel hard-mask-assisted self-aligned planarization process that allows the polymer in 1-3 μm vicinity of the devices to be planarized perfectly to the top of devices. The hard-mask-assisted process also allows self-aligned via formation for metal interconnection to device top of μm size. The hard mask is removed to expose a very clean device top surface for depositing metals for low ohmic contact resistance metal interconnection. The process is robust because it is insensitive to device height difference, spin-on polymer thickness variation, and polymer etch non-uniformity. We have demonstrated high yield fabrication of monolithically integrated optical switch arrays with mesa diodes and waveguide electroabsorption modulators on InP substrate with yield > 90%, high breakdown voltage of > 15 Volts, and low ohmic contact resistance of 10-20 Ω.

  19. Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

    Science.gov (United States)

    Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

    2016-10-01

    A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (techniques. The measurements were carried out on epitaxial Heusler alloy (Co2FeSi or Co2MnSi)/n-GaAs heterostructures. Lateral spin valve devices were fabricated by electron beam and photolithography. We compare measurements carried out by the new FMR-based technique with traditional non-local and three-terminal Hanle measurements. A full model appropriate for the measurements will be introduced, and a broader discussion in the context of spin pumping experimenments will be included in the talk. The new technique provides a simple and powerful means for detecting spin accumulation at high temperatures. Reference: C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

  20. Design and fabrication of a MEMS Lamb wave device based on ZnO thin film

    Energy Technology Data Exchange (ETDEWEB)

    Liu Mengwei; Li Junhong; Ma Jun; Wang Chenghao, E-mail: liumw@mail.ioa.ac.cn [Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190 (China)

    2011-04-15

    This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film. The Lamb waves were respectively launched and received by both Al interdigital transducers. In order to reduce the stress of the thin membrane, the ZnO/Al/LTO/Si{sub 3}N{sub 4}/Si multilayered thin plate was designed and fabricated. A novel method to obtain the piezoelectric constant of the ZnO film was used. The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A{sub 0} and symmetric S{sub 0} modes Lamb wave agree with the theoretical predictions. The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application. (semiconductor devices)

  1. Modeling and simulation of bulk gallium nitride power semiconductor devices

    Directory of Open Access Journals (Sweden)

    G. Sabui

    2016-05-01

    Full Text Available Bulk gallium nitride (GaN power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

  2. III-nitride semiconductors and their modern devices

    CERN Document Server

    2013-01-01

    This book is dedicated to GaN and its alloys AlGaInN (III-V nitrides), semiconductors with intrinsic properties well suited for visible and UV light emission and electronic devices working at high temperature, high frequency, and harsh environments. There has been a rapid growth in the industrial activity relating to GaN, with GaN now ranking at the second position (after Si) among all semiconductors. This is mainly thanks to LEDs, but also to the emergence of lasers and high power and high frequency electronics. GaN-related research activities are also diversifying, ranging from advanced optical sources and single electron devices to physical, chemical, and biological sensors, optical detectors, and energy converters. All recent developments of nitrides and of their technology are gathered here in a single volume, with chapters written by world leaders in the field. This third book of the series edited by B. Gil is complementary to the preceding two, and is expected to offer a modern vision of nitrides and...

  3. Binary copper oxide semiconductors: From materials towards devices

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, B.K.; Polity, A.; Reppin, D.; Becker, M.; Hering, P.; Klar, P.J.; Sander, T.; Reindl, C.; Benz, J.; Eickhoff, M.; Heiliger, C.; Heinemann, M. [1. Physics Institute, Justus-Liebig University of Giessen (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics (IEP), Otto-von-Guericke University Magdeburg (Germany); Shokovets, S. [Institute of Physics, Ilmenau University of Technology (Germany); Mueller, C.; Ronning, C. [Institute of Solid State Physics, Friedrich Schiller University Jena (Germany)

    2012-08-15

    Copper-oxide compound semiconductors provide a unique possibility to tune the optical and electronic properties from insulating to metallic conduction, from bandgap energies of 2.1 eV to the infrared at 1.40 eV, i.e., right into the middle of the efficiency maximum for solar-cell applications. Three distinctly different phases, Cu{sub 2}O, Cu{sub 4}O{sub 3}, and CuO, of this binary semiconductor can be prepared by thin-film deposition techniques, which differ in the oxidation state of copper. Their material properties as far as they are known by experiment or predicted by theory are reviewed. They are supplemented by new experimental results from thin-film growth and characterization, both will be critically discussed and summarized. With respect to devices the focus is on solar-cell performances based on Cu{sub 2}O. It is demonstrated by photoelectron spectroscopy (XPS) that the heterojunction system p-Cu{sub 2}O/n-AlGaN is much more promising for the application as efficient solar cells than that of p-Cu{sub 2}O/n-ZnO heterojunction devices that have been favored up to now. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  5. Antimonide-Based Compound Semiconductors for Electronic Devices: A Review

    Science.gov (United States)

    2005-04-01

    currents, apparently due to exten- sive interface recombination [137]. Dodd et al. fabricated npn InAs bipolar transistors on InP in an attempt to achieve...Demonstration of npn InAs bipolar transistors with inverted base doping. IEEE Electron Dev Lett 1996;17(4):166–8. [139] Moran PD, Chow D, Hunter A, Kuech TF...based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors (HBTs

  6. SEMICONDUCTOR DEVICES: Simulation for signal charge transfer of charge coupled devices

    Science.gov (United States)

    Zujun, Wang; Yinong, Liu; Wei, Chen; Benqi, Tang; Zhigang, Xiao; Shaoyan, Huang; Minbo, Liu; Yong, Zhang

    2009-12-01

    Physical device models and numerical processing methods are presented to simulate a linear buried channel charge coupled devices (CCDs). The dynamic transfer process of CCD is carried out by a three-phase clock pulse driver. By using the semiconductor device simulation software MEDICI, dynamic transfer pictures of signal charges cells, electron concentration and electrostatic potential are presented. The key parameters of CCD such as charge transfer efficiency (CTE) and dark electrons are numerically simulated. The simulation results agree with the theoretic and experimental results.

  7. Invited Review Nanoscale devices fabricated by dynamic ploughing with an atomic force microscope

    Science.gov (United States)

    Kunze, Ulrich

    2002-01-01

    A review is given on the dynamic ploughing technique and its application on the fabrication of nanoscale semiconductor structures. The vibrating tip of an atomic force microscope is used to dynamically plough furrows into a polymer layer of a few nm thickness on top of the semiconductor surface. Wet-chemical etching transfers the desired line pattern. The resulting grooves of 50-100 nm width form an arrangement of barriers in the electron layer of a conventional modulation-doped GaAs/AlGaAs heterostructure. A new type of heterostructure with a compensating p-type doped cap layer shows an electron enhancement if the cap layer is selectively removed. Etching a groove in these structures enables one to induce a one-dimensional electron system. Both types of structures are used to fabricate various ballistic quantum devices and Coulomb-blockade structures.

  8. Wide-Bandgap Semiconductor Devices for Automotive Applications

    Science.gov (United States)

    Sugimoto, M.; Ueda, H.; Uesugi, T.; Kachi, T.

    2007-06-01

    In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

  9. Field-effect and frequency dependent transport in semiconductor-enriched single-wall carbon nanotube network device.

    Science.gov (United States)

    Jaiswal, Manu; Sangeeth, C S Suchand; Wang, Wei; Sun, Ya-Ping; Menon, Reghu

    2009-11-01

    The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that uses facile fabrication techniques along with a small-ion as the gate electrolyte-and this is accomplished as a result of the semiconductor enhancement of the tubes. The optical transparency and electrical resistance of the device are modulated with gate voltage. A time-response study of the modulation of optical transparency and electrical resistance upon application of gate voltage suggests the percolative charge transport in the network. Also the ac response in the network is investigated as a function of frequency and temperature down to 5 K. An empirical relation between onset frequency and temperature is determined.

  10. Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

    Science.gov (United States)

    Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

    2017-02-01

    Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

  11. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer

    KAUST Repository

    Nayak, Pradipta K.

    2014-04-14

    We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n-and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.

  12. Majorana fermions in hybrid superconductor-semiconductor nanowire devices

    Science.gov (United States)

    Mourik, V.; Zuo, K.; van Woerkom, D. J.; de Vries, F. R.; Gul, O.; Zhang, H.; de Moor, M. A. W.; Car, D.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.

    2015-03-01

    Our experiment carried out in hybrid superconductor-semiconductor nanowire devices gave the first experimental indications for the existence of Majorana fermions, but many open questions need to be answered. Majorana fermions have to come in pairs, before we were only capable of probing one Majorana fermion. Majorana fermions should be fully gate controllable, which could not be demonstrated convincingly. Upon bringing Majorana fermions closer together, an energy splitting between the two is expected, giving rise to a pair of split peaks instead of a single zero bias peak (ZBP). We are performing new experiments in similar but improved three terminal normal-superconductor-normal InSb nanowire devices. This enables the possibility to probe Majorana fermions occurring at the ends of the superconducting contact by using tunneling spectroscopy. Furthermore, the devices have an improved gate design enabling more efficient gating under the superconducting contact and they have improved contact interfaces resulting in less undesired resonant states. We have observed ZBP's in a large magnetic field range, an oscillatory behavior from ZBP to split peak and back, and tunability of ZBP's by gates underneath the superconducting contact.

  13. Semiconductor Devices Inspired By and Integrated With Biology

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, John [University of Illinois

    2012-04-25

    Biology is curved, soft and elastic; silicon wafers are not. Semiconductor technologies that can bridge this gap in form and mechanics will create new opportunities in devices that adopt biologically inspired designs or require intimate integration with the human body. This talk describes the development of ideas for electronics that offer the performance of state-of-the-art, wafer- based systems but with the mechanical properties of a rubber band. We explain the underlying materials science and mechanics of these approaches, and illustrate their use in (1) bio- integrated, ‘tissue-like’ electronics with unique capabilities for mapping cardiac and neural electrophysiology, and (2) bio-inspired, ‘eyeball’ cameras with exceptional imaging properties enabled by curvilinear, Petzval designs.

  14. Physically-based modelling of polycrystalline semiconductor devices

    CERN Document Server

    Lee, S

    2000-01-01

    model and characterisation method are introduced to study the effects of the multienergetic trap states on the electrical characteristics of poly-TFTs using CdSe devices as the experimental example, and the electrical parameters such as the density distribution of the trapping states are extracted. The results show excellent agreement between the simulation and experimental data. The limitations of this proposed physical model are also studied and discussed. Thin-film technology using polycrystalline semiconductors has been widely applied to active-matrix-addressed liquid crystal displays (AMLCDs) where thin-film transistors act as digital pixel switches. Research and development is in progress to integrate the driver circuits around the peripheral of the display, resulting in significant cost reduction of connections between rows and columns and the peripheral circuitry. For this latter application, where for instance it is important to control the greyscale voltage level delivered to the pixel, an understan...

  15. Conductance matrix of multiterminal semiconductor devices with edge channels

    Energy Technology Data Exchange (ETDEWEB)

    Danilovskii, E. Yu., E-mail: danilovskii@mail.ioffe.ru; Bagraev, N. T. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2014-12-15

    A method for determining the conductance matrix of multiterminal semiconductor structures with edge channels is proposed. The method is based on the solution of a system of linear algebraic equations based on Kirchhoff equations, made up of potential differences U{sub ij} measured at stabilized currents I{sub kl}, where i, j, k, l are terminal numbers. The matrix obtained by solving the system of equations completely describes the structure under study, reflecting its configuration and homogeneity. This method can find wide application when using the known Landauer-Buttiker formalism to analyze carrier transport in the quantum Hall effect and quantum spin Hall effect modes. Within the proposed method, the contribution of the contact area resistances R{sub c} to the formation of conductance matrix elements is taken into account. The possibilities of practical application of the results obtained in developing analog cryptographic devices are considered.

  16. Nonequilibrium drift-diffusion model for organic semiconductor devices

    Science.gov (United States)

    Felekidis, Nikolaos; Melianas, Armantas; Kemerink, Martijn

    2016-07-01

    Two prevailing formalisms are currently used to model charge transport in organic semiconductor devices. Drift-diffusion calculations, on the one hand, are time effective but assume local thermodynamic equilibrium, which is not always realistic. Kinetic Monte Carlo models, on the other hand, do not require this assumption but are computationally expensive. Here, we present a nonequilibrium drift-diffusion model that bridges this gap by fusing the established multiple trap and release formalism with the drift-diffusion transport equation. For a prototypical photovoltaic system the model is shown to quantitatively describe, with a single set of parameters, experiments probing (1) temperature-dependent steady-state charge transport—space-charge limited currents, and (2) time-resolved charge transport and relaxation of nonequilibrated photocreated charges. Moreover, the outputs of the developed kinetic drift-diffusion model are an order of magnitude, or more, faster to compute and in good agreement with kinetic Monte Carlo calculations.

  17. Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals

    Energy Technology Data Exchange (ETDEWEB)

    Stowe, Ashley C.; Burger, Arnold

    2017-04-04

    A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermal neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.

  18. Subbanding, Charge Transport and Related Applications in Semiconductor Devices.

    Science.gov (United States)

    1977-10-01

    These devices use a p-n homo -junction to confine the free electronic charge in the semiconductor to conducting regions so narrow as to exhibit...27.172 Table 6A ~0 ENERGY IN MILLI-ELECTRON VOLTS WC IN ANGSTROMS WC EC(6) ECC 7) EC(8) EC(9) ECC 10) 1.2 3669047 432.986 499.951 566.937 633.941 1.5...VC IN ANGSTROMS (6 ECC ) ECC7) EC(s) EC(9) ECCIS) 3t 236.132 279.167 322.269 365.257 418.319 1,’ 235;907 275;922 321� 364;976 408.013 I. 235,;635

  19. Production planning and control for semiconductor wafer fabrication facilities modeling, analysis, and systems

    CERN Document Server

    Mönch, Lars; Mason, Scott J

    2012-01-01

    Over the last fifty-plus years, the increased complexity and speed of integrated circuits have radically changed our world. Today, semiconductor manufacturing is perhaps the most important segment of the global manufacturing sector. As the semiconductor industry has become more competitive, improving planning and control has become a key factor for business success. This book is devoted to production planning and control problems in semiconductor wafer fabrication facilities. It is the first book that takes a comprehensive look at the role of modeling, analysis, and related information systems

  20. Design and Fabrication of Silicon Carbide Semiconductor Detectors

    Institute of Scientific and Technical Information of China (English)

    MENG; Xin; LIU; Yang; HE; Gao-kui

    2015-01-01

    The potential of silicon carbide(SiC)for use in semiconductor nuclear radiation detectors has been recognized for years.SiC detectors have now been demonstrated for high-resolution alpha particle and X-ray energy spectrometry,beta ray,gamma-ray,thermal-and fast-neutron

  1. Using of the Modern Semiconductor Devices Based on the SiC

    Directory of Open Access Journals (Sweden)

    Pavel Drabek

    2008-01-01

    Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

  2. Electrical device fabrication from nanotube formations

    Science.gov (United States)

    Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

    2013-03-12

    A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

  3. Genetically Modified Collagen-like Triple helix Protein as Biomimetic Template to Fabricate Metal/Semiconductor Nanowires

    Science.gov (United States)

    Bai, Hanying

    Various metal and semiconductor nanowires have been developed as building blocks for electronics, optics, and sensors devices. Among these, new nanowires developed on biomolecular templates got more attention since the molecular recognition functions of these biomolecules with specific ligands can be employed to immobilize nanowires onto specific locations to establish desired device geometries. In order for their application in electronics, optics, and sensors device fabrications, after configuring device geometries with nanowires by the biomolecular recognition, we focused upon the biomineralization function of peptides on the nanotemplate sidewall to develop various material coatings such as metals and semiconductors for electronics and sensor applications. It should be noted that the coating morphology such as particle-domain size and inter-particle distance on the nanotemplates could be tuned by peptide sequences and conformations. We launched the genetically modified recombinant collagen-like triple helix proteins as a biorecognition, size-controlling and rigid biotemplate. This collagen-like triple helix is the genetically engineered polypeptide assembly that contains a fragment from the natural collagen sequence and has attractive features in hybrid nanomaterials. The length of the protein nanowire is uniform since it is determined by the number of amino acids. The length can be flexible if we genetically modify the sequence, which can also add chemical functionality by the genetic engineering procedure. Genetic engineering is more advantageous than the chemical synthesis for the functionalization /deritivization of peptide nanowire because only the desired specific residue of the peptide is functionalized by the genetic approach. The specific sequence can also increase stability so that the mechanical property can be tuned to be suitable for device application in harsh environment. By using the recombinant technology, it is possible to design and amplify a

  4. Active photonic devices based on colloidal semiconductor nanocrystals and organometallic halide perovskites

    Science.gov (United States)

    Suárez Alvarez, Isaac

    2016-10-01

    Semiconductor nanocrystals have arisen as outstanding materials to develop a new generation of optoelectronic devices. Their fabrication under simple and low cost colloidal chemistry methods results in cheap nanostructures able to provide a wide range of optical functionalities. Their attractive optical properties include a high absorption cross section below the band gap, a high quantum yield emission at room temperature, or the capability of tuning the band-gap with the size or the base material. In addition, their solution process nature enables an easy integration on several substrates and photonic structures. As a consequence, these nanoparticles have been extensively proposed to develop several photonic applications, such as detection of light, optical gain, generation of light or sensing. This manuscript reviews the great effort undertaken by the scientific community to construct active photonic devices based on these nanoparticles. The conditions to demonstrate stimulated emission are carefully studied by comparing the dependence of the optical properties of the nanocrystals with their size, shape and composition. In addition, this paper describes the design of different photonic architectures (waveguides and cavities) to enhance the generation of photoluminescence, and hence to reduce the threshold of optical gain. Finally, semiconductor nanocrystals are compared to organometallic halide perovskites, as this novel material has emerged as an alternative to colloidal nanoparticles.

  5. Stretchable semiconductor elements and stretchable electrical circuits

    Science.gov (United States)

    Rogers, John A.; Khang, Dahl-Young; Menard, Etienne

    2009-07-07

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  6. Recent topics on modeling of semiconductor processes, devices, and circuits

    CERN Document Server

    Topaloglu, Rasit Onur

    2011-01-01

    The last couple of years have been very busy for the semiconductor industry and researchers. The rapid speed of production channel length reduction has brought lithographic challenges to semiconductor modeling. These include stress optimization, transistor reliability and efficient circuit design with respect to interconnects, power and leakage at the chip level. This e-book focuses on the latest semiconductor techniques devised to address these issues. It should be a useful resource for electronic engineers and semiconductor chip designers.

  7. Femtosecond laser fabrication of optofluidic devices for single cell manipulation

    Directory of Open Access Journals (Sweden)

    Bragheri Francesca

    2015-01-01

    Full Text Available In this work we fabricate and validate two optofludic devices for the manipulation and analysis of single cells. The chips are fabricated by femtosecond laser micromachining exploiting the 3D capabilities of the technique and the inherent perfect alignment between microfluidic channels and optical networks. Both devices have been validated by probing the mechanical properties of different cancer cell lines, which are expected to show different elasticity because of their different metastatic potential.

  8. Clear Castable Polyurethane Elastomer for Fabrication of Microfluidic Devices

    Science.gov (United States)

    Domansky, Karel; Leslie, Daniel C.; McKinney, James; Fraser, Jacob P.; Sliz, Josiah D.; Hamkins-Indik, Tiama; Hamilton, Geraldine A.; Bahinski, Anthony; Ingber, Donald E.

    2013-01-01

    Polydimethylsiloxane (PDMS) has numerous desirable properties for fabricating microfluidic devices, including optical transparency, flexibility, biocompatibility, and fabrication by casting; however, partitioning of small hydrophobic molecules into the bulk of PDMS hinders industrial acceptance of PDMS microfluidic devices for chemical processing and drug development applications. Here we describe an attractive alternative material that is similar to PDMS in terms of optical transparency, flexibility and castability, but that is also resistant to absorption of small hydrophobic molecules. PMID:23954953

  9. III-V aresenide-nitride semiconductor materials and devices

    Science.gov (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)

    1997-01-01

    III-V arsenide-nitride semiconductor crystals, methods for producing such crystals and devices employing such crystals. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  10. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    Science.gov (United States)

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

    2015-04-01

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  11. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  12. 2007 IEEE Device Research Conference: Tour de Force Multigate and Nanowire Metal Oxide Semiconductor Field-Effect Transistors and Their Application.

    Science.gov (United States)

    Zhang, Pengpeng; Mayer, Theresa S; Jackson, Thomas N

    2007-08-01

    Scaling of the conventional planar complementary metal oxide semiconductor (CMOS) faces many challenges. Top-down fabricated gate-all-around Si nanowire FinFETs, which are compatible with the CMOS processes, offer an opportunity to circumvent these limitations to boost the device scalability and performance. Beyond applications in CMOS technology, the thus fabricated Si nanowire arrays can be explored as biosensors, providing a possible route to multiplexed label-free electronic chips for molecular diagnostics.

  13. All-polymer organic semiconductor laser chips: Parallel fabrication and encapsulation

    DEFF Research Database (Denmark)

    Vannahme, Christoph; Klinkhammer, Sönke; Christiansen, Mads Brøkner

    2010-01-01

    Organic semiconductor lasers are of particular interest as tunable visible laser light sources. For bringing those to market encapsulation is needed to ensure practicable lifetimes. Additionally, fabrication technologies suitable for mass production must be used. We introduce all-polymer chips...... comprising encapsulated distributed feedback organic semiconductor lasers. Several chips are fabricated in parallel by thermal nanoimprint of the feedback grating on 4? wafer scale out of poly(methyl methacrylate) (PMMA) and cyclic olefin copolymer (COC). The lasers consisting of the organic semiconductor...... tris(8- hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2- methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM) are hermetically sealed by thermally bonding a polymer lid. The organic thin film is placed in a basin within the substrate and is not in direct contact to the lid...

  14. Device fabrication: Three-dimensional printed electronics

    Science.gov (United States)

    Lewis, Jennifer A.; Ahn, Bok Y.

    2015-02-01

    Can three-dimensional printing enable the mass customization of electronic devices? A study that exploits this method to create light-emitting diodes based on 'quantum dots' provides a step towards this goal.

  15. SEMICONDUCTOR DEVICES: CuPc/C60 heterojunction thin film optoelectronic devices

    Science.gov (United States)

    Murtaza, Imran; Qazi, Ibrahim; Karimov, Khasan S.

    2010-06-01

    The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C60/Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C60, where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons.

  16. Colloidal Sb2S3 Nanocrystals: Synthesis, Characterization and Fabrication of Solid-State Semiconductor Sensitized Solar Cell

    KAUST Repository

    Abulikemu, Mutalifu

    2015-12-26

    Inorganic nanocrystals composed of earth-abundant and non-toxic elements are crucial to fabricated sustainable photovoltaic devices in large scale. In this study, various-shaped and different phases of antimony sulfide nanocrystals, which is composed of non-scarce and non-toxic elements, are synthesized using hot-injection colloidal method. The effect of various synthetic parameters on the final morphology is explored. Also, foreign ion (Chlorine) effects on the morphology of Sb2S3 nanocrystals have been observed. Structural, optical and morphological properties of the nanocrystals were investigated, and Sb2S3 nanocrystal-based solid-state semiconductor-sensitized solar cells were fabricated using as-prepared nanocrystals. We achieved promising power conversion efficiencies of 1.48%.

  17. Selective laser etching or ablation for fabrication of devices

    KAUST Repository

    Buttner, Ulrich

    2017-01-12

    Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can be used to fabricate a variety of features, including an electrode, an interconnect, a channel, a reservoir, a contact hole, a trench, a pad, or a combination thereof. A variety of devices fabricated according to the methods are also provided. In some aspects, capacitive humidity sensors are provided that can be fabricated according to the provided methods. The capacitive humidity sensors can be fabricated with intricate electrodes, e.g. having a fractal pattern such as a Peano curve, a Hilbert curve, a Moore curve, or a combination thereof.

  18. IV-VI semiconductor growth on silicon substrates and new mid-infrared laser fabrication methods

    Science.gov (United States)

    McCann; Chao; Sachar; McAlister; Li; Fang; Wu; Namjou

    1999-09-01

    This paper reviews results from research conducted at the University of Oklahoma on the development of new IV-VI semiconductor (lead salt) epitaxial growth and laser fabrication procedures that can ultimately lead to dramatic increases in mid-IR laser operating temperatures. Work has focused on growth of IV-VI semiconductor laser structures on silicon substrates using buffer layers that contain BaF2. Recent experiments show that it is possible to obtain high crystalline quality IV-VI semiconductor layer structures on (111)-oriented silicon substrates using molecular beam epitaxy (MBE) or on (100)-oriented silicon using a combination of MBE and liquid phase epitaxy (LPE). Experimental data for IV-VI semiconductor layer structures grown on silicon substrates including crystalline quality information as determined by high resolution X-ray diffraction (HRXRD) measurements and absorption edge information as determined by Fourier transform infrared (FTIR) transmission measurements are presented. Results show that these materials can be used to fabricate lasers that cover the 3 microns (3333 cm-1) to 16 microns (625 cm-1) spectral range. Removal of IV-VI semiconductor laser structures from the silicon growth substrate by dissolving BaF2 buffer layers with water is also demonstrated. This allows epitaxially-grown laser structures to be sandwiched between two heat sinks with a minimum of thermally resistive IV-VI semiconductor material. Theoretical modeling predicts that IV-VI lasers fabricated this way will have maximum continuous wave (cw) operating temperatures at least 60 degrees higher than those of IV-VI lasers fabricated on PbSe or PbTe substrates.

  19. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

    Science.gov (United States)

    Moustakas, Theodore D.; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  20. Optical Biosensors: A Revolution Towards Quantum Nanoscale Electronics Device Fabrication

    Directory of Open Access Journals (Sweden)

    D. Dey

    2011-01-01

    Full Text Available The dimension of biomolecules is of few nanometers, so the biomolecular devices ought to be of that range so a better understanding about the performance of the electronic biomolecular devices can be obtained at nanoscale. Development of optical biomolecular device is a new move towards revolution of nano-bioelectronics. Optical biosensor is one of such nano-biomolecular devices that has a potential to pave a new dimension of research and device fabrication in the field of optical and biomedical fields. This paper is a very small report about optical biosensor and its development and importance in various fields.

  1. Effects of device size and material on the bending performance of resistive-switching memory devices fabricated on flexible substrates

    Science.gov (United States)

    Lee, Won-Ho; Yoon, Sung-Min

    2017-05-01

    The resistive change memory (RCM) devices using amorphous In-Ga-Zn-O (IGZO) and microcrystalline Al-doped ZnO (AZO) thin films were fabricated on plastic substrates and characterized for flexible electronic applications. The device cell sizes were varied to 25 × 25, 50 × 50, 100 × 100, and 200 × 200 μm2 to examine the effects of cell size on the resistive-switching (RS) behaviors at a flat state and under bending conditions. First, it was found that the high-resistance state programmed currents markedly increased with the increase in the cell size. Second, while the AZO RCM devices did not exhibit RESET operations at a curvature radius smaller than 8.0 mm, the IGZO RCM devices showed sound RS behaviors even at a curvature radius of 4.5 mm. Third, for the IGZO RCM devices with the cell size bigger than 100 × 100 μm2, the RESET operation could not be performed at a curvature radius smaller than 6.5 mm. Thus, it was elucidated that the RS characteristics of the flexible RCM devices using oxide semiconductor thin films were closely related to the types of RS materials and the cell size of the device.

  2. Advanced numerical methods and software approaches for semiconductor device simulation

    Energy Technology Data Exchange (ETDEWEB)

    CAREY,GRAHAM F.; PARDHANANI,A.L.; BOVA,STEVEN W.

    2000-03-23

    In this article the authors concisely present several modern strategies that are applicable to drift-dominated carrier transport in higher-order deterministic models such as the drift-diffusion, hydrodynamic, and quantum hydrodynamic systems. The approaches include extensions of upwind and artificial dissipation schemes, generalization of the traditional Scharfetter-Gummel approach, Petrov-Galerkin and streamline-upwind Petrov Galerkin (SUPG), entropy variables, transformations, least-squares mixed methods and other stabilized Galerkin schemes such as Galerkin least squares and discontinuous Galerkin schemes. The treatment is representative rather than an exhaustive review and several schemes are mentioned only briefly with appropriate reference to the literature. Some of the methods have been applied to the semiconductor device problem while others are still in the early stages of development for this class of applications. They have included numerical examples from the recent research tests with some of the methods. A second aspect of the work deals with algorithms that employ unstructured grids in conjunction with adaptive refinement strategies. The full benefits of such approaches have not yet been developed in this application area and they emphasize the need for further work on analysis, data structures and software to support adaptivity. Finally, they briefly consider some aspects of software frameworks. These include dial-an-operator approaches such as that used in the industrial simulator PROPHET, and object-oriented software support such as those in the SANDIA National Laboratory framework SIERRA.

  3. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    Science.gov (United States)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of

  4. Microplasma devices fabricated in silicon, ceramic, and metal/polymer structures: arrays, emitters and photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Eden, J G [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Park, S-J [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Ostrom, N P [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); McCain, S T [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Wagner, C J [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Vojak, B A [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Chen, J [Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Liu, C [Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Allmen, P von [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Zenhausern, F [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Sadler, D J [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Jensen, C [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Wilcox, D L [Motorola Laboratories, Solid State Research Center, Tempe, AZ 85284 (United States); Ewing, J J [Ewing Technology Associates, 5416 143rd Avenue, SE, Bellevue, WA 98006 (United States)

    2003-12-07

    Recent advances in the development of microplasma devices fabricated in a variety of materials systems (Si, ceramic multilayers, and metal/polymer structures) and configurations are reviewed. Arrays of microplasma emitters, having inverted pyramidal Si electrodes or produced in ceramic multilayer sandwiches with integrated ballasting for each pixel, have been demonstrated and arrays as large as 30 x 30 pixels are described. A new class of photodetectors, hybrid semiconductor/microplasma devices, is shown to exhibit photoresponsivities in the visible and near-infrared that are more than an order of magnitude larger than those typical of semiconductor avalanche photodiodes. Microdischarge devices having refractory or piezoelectric dielectric films such as Al{sub 2}O{sub 3} or BN have extended lifetimes ({approx}86% of initial radiant output after 100 h with an Al{sub 2}O{sub 3} dielectric) and controllable electrical characteristics. A segmented, linear array of microdischarges, fabricated in a ceramic multilayer structure and having an active length of {approx}1 cm and a clear aperture of 80 x 360 {mu}m{sup 2}, exhibits evidence of gain on the 460.3 nm transition of Xe{sup +}, making it the first example of a microdischarge-driven optical amplifier.

  5. Microplasma devices fabricated in silicon, ceramic, and metal/polymer structures: arrays, emitters and photodetectors

    Science.gov (United States)

    Eden, J. G.; Park, S.-J.; Ostrom, N. P.; McCain, S. T.; Wagner, C. J.; Vojak, B. A.; Chen, J.; Liu, C.; von Allmen, P.; Zenhausern, F.; Sadler, D. J.; Jensen, C.; Wilcox, D. L.; Ewing, J. J.

    2003-12-01

    Recent advances in the development of microplasma devices fabricated in a variety of materials systems (Si, ceramic multilayers, and metal/polymer structures) and configurations are reviewed. Arrays of microplasma emitters, having inverted pyramidal Si electrodes or produced in ceramic multilayer sandwiches with integrated ballasting for each pixel, have been demonstrated and arrays as large as 30 × 30 pixels are described. A new class of photodetectors, hybrid semiconductor/microplasma devices, is shown to exhibit photoresponsivities in the visible and near-infrared that are more than an order of magnitude larger than those typical of semiconductor avalanche photodiodes. Microdischarge devices having refractory or piezoelectric dielectric films such as Al2O3 or BN have extended lifetimes (~86% of initial radiant output after 100 h with an Al2O3 dielectric) and controllable electrical characteristics. A segmented, linear array of microdischarges, fabricated in a ceramic multilayer structure and having an active length of ~1 cm and a clear aperture of 80 × 360 µm2, exhibits evidence of gain on the 460.3 nm transition of Xe+, making it the first example of a microdischarge-driven optical amplifier.

  6. Fabrication of paper based microfluidic devices

    CSIR Research Space (South Africa)

    Govindasamy, K

    2012-07-01

    Full Text Available application in the area of point of care/in the field testing. This is due to their ease of operation which requires no supporting equipment and external power and ability to provide results that are easily interpreted [1]. Home pregnancy tests (lateral... to mechanical stresses such as bending and folding [4]. Wax printing uses a solid ink printer which deposits wax onto the surface of paper. The wax is then melted into the depth of the paper using a hot plate or an oven. Total fabrication time is less than 5...

  7. Fabrication of contamination-free CVD Graphene devices using soak and peel method

    Science.gov (United States)

    Sebastian, Abhilash; Kakatkar, Aniket; de Alba, Roberto; Zhelev, Nikolay; McEuen, Paul; Craighead, Harold; Parpia, Jeevak

    2014-03-01

    Large area graphene-based devices are commonly fabricated by transferring the CVD grown graphene from metal foils to semiconductor substrates. However, during device fabrication, the transfer process involves chemical etching of metal that leads to the degradation of electrical properties of graphene. Recently, a clean transfer of graphene to devices with improved electrical properties, by delamination of graphene from metal substrates by soak and peel using DI-water has been demonstrated. We employed the soak and peel scheme to fabricate graphene transistor arrays on a SiO2/Si substrate with a back gate configuration. The source-drain contacts are patterned using Ti/Pt with graphene channel length varying from 2-50um. The graphene is transferred subsequently to the substrate and yields a high quality junction between metal electrodes and graphene. The contact resistance is low and the Dirac peak is observed across the array. The suitability of the graphene transistors for chemical functionalization will be presented. Possible application of this transfer technique for fabricating large area suspended nano-electro mechanical systems will be discussed.

  8. Modeling of semiconductor devices for high-speed all-optical signal processing

    DEFF Research Database (Denmark)

    Bischoff, Svend; Højfeldt, Sune; Mørk, Jesper

    2001-01-01

    The all-optical signal processing performance of devices based on active semiconductor waveguides is investigated. A large signal model is used to analyse the physical mechanisms limiting the high-speed performance of both semiconductor optical amplifiers (SOAs) and electro-absorption modulators ...

  9. Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

    Science.gov (United States)

    Fujita, Shizuo; Oda, Masaya; Kaneko, Kentaro; Hitora, Toshimi

    2016-12-01

    The recent progress and development of corundum-structured III-oxide semiconductors are reviewed. They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. This is favorable for the wide commercial use of devices at low cost. The III-oxide semiconductors are promising candidates for new devices contributing to sustainable social, economic, and technological development for the future.

  10. MOF positioning technology and device fabrication.

    Science.gov (United States)

    Falcaro, Paolo; Ricco, Raffaele; Doherty, Cara M; Liang, Kang; Hill, Anita J; Styles, Mark J

    2014-08-21

    Metal organic frameworks (MOFs) offer the highest surface areas per gram of any known material. As such, they epitomise resource productivity in uses where specific surface area is critical, such as adsorption, storage, filtration and catalysis. However, the ability to control the position of MOFs is also crucial for their use in devices for applications such as sensing, delivery, sequestration, molecular transport, electronics, energy production, optics, bioreactors and catalysis. In this review we present the current technologies that enable the precise positioning of MOFs onto different platforms. Methods for permanent localisation, dynamic localisation, and spatial control of functional materials within MOF crystals are described. Finally, examples of devices in which the control of MOF position and functionalisation will play a major technological role are presented.

  11. Device Fabrication and Probing of Discrete Carbon Nanostructures

    KAUST Repository

    Batra, Nitin M

    2015-05-06

    Device fabrication on multi walled carbon nanotubes (MWCNTs) using electrical beam lithography (EBL), electron beam induced deposition (EBID), ion beam induced deposition (IBID) methods was carried out, followed by device electrical characterization using a conventional probe station. A four-probe configuration was utilized to measure accurately the electrical resistivity of MWCNTs with similar results obtained from devices fabricated by different methods. In order to reduce the contact resistance of the beam deposited platinum electrodes, single step vacuum thermal annealing was performed. Microscopy and spectroscopy were carried out on the beam deposited electrodes to follow the structural and chemical changes occurring during the vacuum thermal annealing. For the first time, a core-shell type structure was identified on EBID Pt and IBID Pt annealed electrodes and analogous free standing nanorods previously exposed to high temperature. We believe this observation has important implications for transport properties studies of carbon materials. Apart from that, contamination of carbon nanostructure, originating from the device fabrication methods, was also studied. Finally, based on the observations of faster processing time together with higher yield and flexibility for device preparation, we investigated EBID to fabricate devices for other discrete carbon nanostructures.

  12. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  14. Frequency-Domain Thermal Modelling and Characterization of Power Semiconductor Devices

    DEFF Research Database (Denmark)

    Ma, Ke; He, Ning; Liserre, Marco

    2016-01-01

    their limits to correctly predict the device temperatures, especially when considering the thermal grease and heat sink attached to the power semiconductor devices. In this paper, frequency-domain approach is applied to the modelling of the thermal dynamics for power devices. The limits of the existing RC lump...

  15. Nano-scaled semiconductor devices physics, modelling, characterisation, and societal impact

    CERN Document Server

    Gutiérrez-D, Edmundo A

    2016-01-01

    This book describes methods for the characterisation, modelling, and simulation prediction of these second order effects in order to optimise performance, energy efficiency and new uses of nano-scaled semiconductor devices.

  16. Enhancement of superconducting critical current by injection of quasiparticles in superconductor semiconductor devices

    DEFF Research Database (Denmark)

    Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Sørensen, C. B.

    2000-01-01

    We report new measurements on 3-terminal superconductor semiconductor injection devices, demonstrating enhancement of the supercurrent by injection from a superconducting injector electrode. Two other electrodes were used as detectors. Applying a small voltage to the injector, reduced the maximum...

  17. Microcontact printing-based fabrication of digital microfluidic devices.

    Science.gov (United States)

    Watson, Michael W L; Abdelgawad, Mohamed; Ye, George; Yonson, Neal; Trottier, Justin; Wheeler, Aaron R

    2006-11-15

    Digital microfluidics is a fluid manipulation technique in which discrete droplets are actuated on patterned arrays of electrodes. Although there is great enthusiasm for the application of this technique to chemical and biological assays, development has been hindered by the requirement of clean room fabrication facilities. Here, we present a new fabrication scheme, relying on microcontact printing (microCP), an inexpensive technique that does not require clean room facilities. In microCP, an elastomeric poly(dimethylsiloxane) stamp is used to deposit patterns of self-assembled monolayers onto a substrate. We report three different microCP-based fabrication techniques: (1) selective etching of gold-on-glass substrates; (2) direct printing of a suspension of palladium colloids; and (3) indirect trapping of gold colloids from suspension. In method 1, etched gold electrodes are used for droplet actuation; in methods 2 and 3, colloid patterns are used to seed electroless deposition of copper. We demonstrate, for the first time, that digital microfluidic devices can be formed by microCP and are capable of the full range of digital microfluidics operations: dispensing, merging, motion, and splitting. Devices formed by the most robust of the new techniques were comparable in performance to devices formed by conventional methods, at a fraction of the fabrication time. These new techniques for digital microfluidics device fabrication have the potential to facilitate expansion of this technology to any research group, even those without access to conventional microfabrication tools and facilities.

  18. Underwater laser fabrication method and device

    Energy Technology Data Exchange (ETDEWEB)

    Okazaki, Yuki; Ito, Arata; Sano, Yuji; Mukai, Naruhiko; Aoki, Nobutada; Konagai, Chikara [Toshiba Corp., Kawasaki, Kanagawa (Japan); Kikunaga, Muneyoshi

    1996-08-13

    The present invention concerns an underwater laser fabrication method which comprises irradiating laser beams having a visible wavelength at high power and of short pulse to the surface of structural components immersed in coolants to improve residual stresses on the surface of the materials of the structural components and eliminate cracks or remove cruds. Laser beams having a visible wavelength and a pulse width of not greater than 100n sec are irradiated to the materials on the surface of inner structural components of a reactor under the conditions of a peak power of from 0.1 to 10GW/cm{sup 2} per 1 pulse, and overlapping ratio of irradiation beams of not less than 100%, to improve the residual stresses on the surface of the materials of the structural components and form them into compressed stresses. Then, the irradiation is conducted while monitoring the state to remove crackings by abrasion. Further, the stresses on the surface of the materials after removing crackings are improved. In the present invention, since the laser beams, namely, visible rays can be transmitted directly under water, the operation can be conducted directly in coolants. Therefore, it is not necessary to drain coolants in the reactor before the operation. Further, reduction in an operator`s radiation exposure can be expected. (T.M.)

  19. Temperature control of power semiconductor devices in traction applications

    Science.gov (United States)

    Pugachev, A. A.; Strekalov, N. N.

    2017-02-01

    The peculiarity of thermal management of traction frequency converters of a railway rolling stock is highlighted. The topology and the operation principle of the automatic temperature control system of power semiconductor modules of the traction frequency converter are designed and discussed. The features of semiconductors as an object of temperature control are considered; the equivalent circuit of thermal processes in the semiconductors is suggested, the power losses in the two-level voltage source inverters are evaluated and analyzed. The dynamic properties and characteristics of the cooling fan induction motor electric drive with the scalar control are presented. The results of simulation in Matlab are shown for the steady state of thermal processes.

  20. Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures.

    Science.gov (United States)

    Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

    2015-12-05

    Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal-semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω(-) (1) cm(-) (1), with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed

  1. CVD polymers fabrication of organic surfaces and devices

    CERN Document Server

    Gleason, Karen K

    2015-01-01

    The method of CVD (chemical vapor deposition) is a versatile technique to fabricate high-quality thin films and structured surfaces in the nanometer regime from the vapor phase. Already widely used for the deposition of inorganic materials in the semiconductor industry, CVD has become the method of choice in many applications to process polymers as well. This highly scalable technique allows for synthesizing high-purity, defect-free films and for systematically tuning their chemical, mechanical and physical properties. In addition, vapor phase processing is critical for the deposition of insol

  2. Classification of methods for measuring current-voltage characteristics of semiconductor devices

    Directory of Open Access Journals (Sweden)

    Iermolenko Ia. O.

    2014-06-01

    Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

  3. Method for fabricating transistors using crystalline silicon devices on glass

    Science.gov (United States)

    McCarthy, A.M.

    1997-09-02

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

  4. Fabrication and Characterization of Suspended Carbon Nanotube Devices in Liquid

    Energy Technology Data Exchange (ETDEWEB)

    Artyukhin, A; Stadermann, M; Stroeve, P; Bakajin, O; Noy, A

    2006-10-30

    Suspended carbon nanotube devices are a promising platform for future bio-electronic applications. Suspended carbon nanotube transistors have been previously fabricated in air; however all previous attempts to bring them into liquid failed. We analyze forces acting on the suspended nanotube devices during immersion into liquids and during device operation and show that surface tension forces acting on the suspended nanotubes during transfer into the liquid phase are responsible for the nanotube damage. We have developed a new strategy that circumvents these limitations by coating suspended nanotubes with a rigid inorganic shell in the gas phase. The coating reinforces the nanotubes and allows them to survive transfer through the interface. Subsequent removal of the coating in the solution phase restores pristine suspended nanotubes. We demonstrate that devices fabricated using this technique preserve their original electrical characteristics.

  5. Fabrication and Performance of a Photonic-Microfluidic Integrated Device

    Directory of Open Access Journals (Sweden)

    Benjamin R. Watts

    2012-02-01

    Full Text Available Fabrication and performance of a functional photonic-microfluidic flow cytometer is demonstrated. The devices are fabricated on a Pyrex substrate by photolithographically patterning the microchannels and optics in a SU-8 layer that is sealed via a poly(dimethylsiloxane (PDMS layer through a unique chemical bonding method. The resulting devices eliminate the free-space excitation optics through integration of microlenses onto the chip to mimic conventional cytometry excitation. Devices with beam waists of 6 μm and 12 μm in fluorescent detection and counting tests using 2.5 and 6 μm beads-show CVs of 9%–13% and 23% for the two devices, respectively. These results are within the expectations for a conventional cytometer (5%–15% and demonstrate the ability to integrate the photonic components for excitation onto the chip and the ability to maintain the level of reliable detection.

  6. Fabrication of quantum-dot devices in graphene

    Directory of Open Access Journals (Sweden)

    Satoshi Moriyama, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya, Shinya Uji, Maki Shimizu and Koji Ishibashi

    2010-01-01

    Full Text Available We describe our recent experimental results on the fabrication of quantum-dot devices in a graphene-based two-dimensional system. Graphene samples were prepared by micromechanical cleavage of graphite crystals on a SiO2/Si substrate. We performed micro-Raman spectroscopy measurements to determine the number of layers of graphene flakes during the device fabrication process. By applying a nanofabrication process to the identified graphene flakes, we prepared a double-quantum-dot device structure comprising two lateral quantum dots coupled in series. Measurements of low-temperature electrical transport show the device to be a series-coupled double-dot system with varied interdot tunnel coupling, the strength of which changes continuously and non-monotonically as a function of gate voltage.

  7. Control and automation of multilayered integrated microfluidic device fabrication.

    Science.gov (United States)

    Kipper, Sarit; Frolov, Ludmila; Guy, Ortal; Pellach, Michal; Glick, Yair; Malichi, Asaf; Knisbacher, Binyamin A; Barbiro-Michaely, Efrat; Avrahami, Dorit; Yavets-Chen, Yehuda; Levanon, Erez Y; Gerber, Doron

    2017-01-31

    Integrated microfluidics is a sophisticated three-dimensional (multi layer) solution for high complexity serial or parallel processes. Fabrication of integrated microfluidic devices requires soft lithography and the stacking of thin-patterned PDMS layers. Precise layer alignment and bonding is crucial. There are no previously reported standards for alignment of the layers, which is mostly performed using uncontrolled processes with very low alignment success. As a result, integrated microfluidics is mostly used in academia rather than in the many potential industrial applications. We have designed and manufactured a semiautomatic Microfluidic Device Assembly System (μDAS) for full device production. μDAS comprises an electrooptic mechanical system consisting of four main parts: optical system, smart media holder (for PDMS), a micropositioning xyzθ system and a macropositioning XY mechanism. The use of the μDAS yielded valuable information regarding PDMS as the material for device fabrication, revealed previously unidentified errors, and enabled optimization of a robust fabrication process. In addition, we have demonstrated the utilization of the μDAS technology for fabrication of a complex 3 layered device with over 12 000 micromechanical valves and an array of 64 × 64 DNA spots on a glass substrate with high yield and high accuracy. We increased fabrication yield from 25% to about 85% with an average layer alignment error of just ∼4 μm. It also increased our protein expression yields from 80% to over 90%, allowing us to investigate more proteins per experiment. The μDAS has great potential to become a valuable tool for both advancing integrated microfluidics in academia and producing and applying microfluidic devices in the industry.

  8. Method for manufacturing electrical contacts for a thin-film semiconductor device

    Science.gov (United States)

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1988-11-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  9. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp; Miyokawa, Norihiko; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  10. Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems

    Science.gov (United States)

    Welch, James D.

    2003-09-23

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced carriers in essentially intrinsic, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at substantially equal doping levels, essentially homogeneously simultaneously containing both N and P-type metallurgical dopants at different doping levels, and containing a single metallurgical doping type, and functional combinations thereof. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents utilizing material(s) which form rectifying junctions with both N and P-type semiconductor whether metallurigically or field induced.

  11. Analysis of Interface Charge Densities for High-k Dielectric Materials based Metal Oxide Semiconductor Devices

    Science.gov (United States)

    Maity, N. P.; Thakur, R. R.; Maity, Reshmi; Thapa, R. K.; Baishya, S.

    2016-10-01

    In this paper, the interface charge densities (Dit) are studied and analyzed for ultra thin dielectric metal oxide semiconductor (MOS) devices using different high-k dielectric materials such as Al2O3, ZrO2 and HfO2. The Dit have been calculated by a new approach using conductance method and it indicates that by reducing the thickness of the oxide, the Dit increases and similar increase is also found by replacing SiO2 with high-k. For the same oxide thickness, SiO2 has the lowest Dit and found to be the order of 1011cm-2eV-1. Linear increase in Dit has been observed as the dielectric constant of the oxide increases. The Dit is found to be in good agreement with published fabrication results at p-type doping level of 1×1017cm-3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

  12. Study of Periodic Fabrication Error of Optical Splitter Device Performance

    Directory of Open Access Journals (Sweden)

    Mohammad Syuhaimi Ab-Rahman

    2012-01-01

    Full Text Available In this paper, the effect of fabrication errors (FEs on the performance of 1×4 optical power splitter is investigated in details. The FE, which is assumed to take regular shape, is considered in each section of the device. Simulation result show that FE has a significant effect on the output power especially when it occurs in coupling regions.

  13. Methods and devices for fabricating three-dimensional nanoscale structures

    Science.gov (United States)

    Rogers, John A.; Jeon, Seokwoo; Park, Jangung

    2010-04-27

    The present invention provides methods and devices for fabricating 3D structures and patterns of 3D structures on substrate surfaces, including symmetrical and asymmetrical patterns of 3D structures. Methods of the present invention provide a means of fabricating 3D structures having accurately selected physical dimensions, including lateral and vertical dimensions ranging from 10s of nanometers to 1000s of nanometers. In one aspect, methods are provided using a mask element comprising a conformable, elastomeric phase mask capable of establishing conformal contact with a radiation sensitive material undergoing photoprocessing. In another aspect, the temporal and/or spatial coherence of electromagnetic radiation using for photoprocessing is selected to fabricate complex structures having nanoscale features that do not extend entirely through the thickness of the structure fabricated.

  14. Microfluidic device fabrication by thermoplastic hot-embossing.

    Science.gov (United States)

    Yang, Shuang; Devoe, Don L

    2013-01-01

    Due to their low cost compatibility with replication-based fabrication methods, thermoplastics represent an exceptionally attractive family of materials for the fabrication of lab-on-a-chip platforms. A diverse range of thermoplastic materials suitable for microfluidic fabrication is available, offering a wide selection of mechanical and chemical properties that can be leveraged and further tailored for specific applications. While high-throughput embossing methods such as reel-to-reel processing of thermoplastics is an attractive method for industrial microfluidic chip production, the use of single chip hot embossing is a cost-effective technique for realizing high-quality microfluidic devices during the prototyping stage. Here we describe methods for the replication of microscale features in two thermoplastics, polymethylmethacrylate (PMMA) and polycarbonate (PC), using hot embossing from a silicon template fabricated by deep reactive-ion etching.

  15. Characterization of the first prototypes of Silicon Photomultipliers with bulk-integrated quench resistor fabricated at MPI semiconductor laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Jendrysik, Christian, E-mail: jendrysik@hll.mpg.de [Max-Planck-Institut Halbleiterlabor, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Max-Planck-Institut für Physik, Föhringer Ring 6, D-80805 Munich (Germany); Andriček, Ladislav; Liemann, Gerhard; Moser, Hans-Günther; Ninković, Jelena; Richter, Rainer [Max-Planck-Institut Halbleiterlabor, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Max-Planck-Institut für Physik, Föhringer Ring 6, D-80805 Munich (Germany); Schopper, Florian [Max-Planck-Institut Halbleiterlabor, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Max-Planck-Institut für extraterrestrische Physik, Giessenbachstraße, D-85748 Garching (Germany)

    2013-08-01

    In this paper new results of the characterization of Silicon Photomultipliers (SiPMs) with bulk-integrated quench resistor will be presented. The novel detector concept was developed at the Max-Planck-Institute (MPI) semiconductor laboratory and allows a metal and polysilicon free entrance window which offers an improvement in photon detection efficiency (PDE). For electrical separation and suppression of optical cross talk (OCT) an insensitive area (gap) between neighboring cells is required. Based on simulations the first prototypes with devices of different combinations of cell size and gap were fabricated, providing the opportunity to study the influence of these parameters on the detector performance. First PDE measurements of the new detector are presented together with results of the influence of geometrical variations. Also an outlook on possible future developments of the concept with single cell read-out is given.

  16. Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

    Directory of Open Access Journals (Sweden)

    Gammon P.M.

    2017-01-01

    Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

  17. Organic Lasers: Recent Developments on Materials, Device Geometries, and Fabrication Techniques.

    Science.gov (United States)

    Kuehne, Alexander J C; Gather, Malte C

    2016-11-09

    Organic dyes have been used as gain medium for lasers since the 1960s, long before the advent of today's organic electronic devices. Organic gain materials are highly attractive for lasing due to their chemical tunability and large stimulated emission cross section. While the traditional dye laser has been largely replaced by solid-state lasers, a number of new and miniaturized organic lasers have emerged that hold great potential for lab-on-chip applications, biointegration, low-cost sensing and related areas, which benefit from the unique properties of organic gain materials. On the fundamental level, these include high exciton binding energy, low refractive index (compared to inorganic semiconductors), and ease of spectral and chemical tuning. On a technological level, mechanical flexibility and compatibility with simple processing techniques such as printing, roll-to-roll, self-assembly, and soft-lithography are most relevant. Here, the authors provide a comprehensive review of the developments in the field over the past decade, discussing recent advances in organic gain materials, which are today often based on solid-state organic semiconductors, as well as optical feedback structures, and device fabrication. Recent efforts toward continuous wave operation and electrical pumping of solid-state organic lasers are reviewed, and new device concepts and emerging applications are summarized.

  18. Optoelectronic devices based on graded bandgap structures utilising electroplated semiconductors

    OpenAIRE

    2016-01-01

    The main aim of the work presented in this thesis is to develop low-cost multi-junction graded bandgap solar cells using electroplated semiconductors. The semiconductor materials explored in this research are CdSe, ZnTe, CdS, CdMnTe and CdTe thin films. These layers were characterised for their structural, compositional, morphological, optical, and electrical features using XRD, Raman spectroscopy, EDX, SEM, UV-Vis spectroscopy, PEC cell, C-V, I-V and UPS measurement techniques respectively. ...

  19. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.

    2015-02-13

    Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

  20. Fabrication of polyimide based microfluidic channels for biosensor devices

    Science.gov (United States)

    Zulfiqar, Azeem; Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

    2015-03-01

    The ever-increasing complexity of the fabrication process of Point-of-care (POC) devices, due to high demand of functional versatility, compact size and ease-of-use, emphasizes the need of multifunctional materials that can be used to simplify this process. Polymers, currently in use for the fabrication of the often needed microfluidic channels, have limitations in terms of their physicochemical properties. Therefore, the use of a multipurpose biocompatible material with better resistance to the chemical, thermal and electrical environment, along with capability of forming closed channel microfluidics is inevitable. This paper demonstrates a novel technique of fabricating microfluidic devices using polyimide (PI) which fulfills the aforementioned properties criteria. A fabrication process to pattern microfluidic channels, using partially cured PI, has been developed by using a dry etching method. The etching parameters are optimized and compared to those used for fully cured PI. Moreover, the formation of closed microfluidic channel on wafer level by bonding two partially cured PI layers or a partially cured PI to glass with high bond strength has been demonstrated. The reproducibility in uniformity of PI is also compared to the most commonly used SU8 polymer, which is a near UV sensitive epoxy resin. The potential applications of PI processing are POC and biosensor devices integrated with microelectronics.

  1. Quantitative Determination of Organic Semiconductor Microstructure from the Molecular to Device Scale

    KAUST Repository

    Rivnay, Jonathan

    2012-10-10

    A study was conducted to demonstrate quantitative determination of organic semiconductor microstructure from the molecular to device scale. The quantitative determination of organic semiconductor microstructure from the molecular to device scale was key to obtaining precise description of the molecular structure and microstructure of the materials of interest. This information combined with electrical characterization and modeling allowed for the establishment of general design rules to guide future rational design of materials and devices. Investigations revealed that a number and variety of defects were the largest contributors to the existence of disorder within a lattice, as organic semiconductor crystals were dominated by weak van der Waals bonding. Crystallite size, texture, and variations in structure due to spatial confinement and interfaces were also found to be relevant for transport of free charge carriers and bound excitonic species over distances that were important for device operation.

  2. Monitoring elbow isometric contraction by novel wearable fabric sensing device

    Science.gov (United States)

    Wang, Xi; Tao, Xiaoming; So, Raymond C. H.; Shu, Lin; Yang, Bao; Li, Ying

    2016-12-01

    Fabric-based wearable technology is highly desirable in sports, as it is light, flexible, soft, and comfortable with little interference to normal sport activities. It can provide accurate information on the in situ deformation of muscles in a continuous and wireless manner. During elbow flexion in isometric contraction, upper arm circumference increases with the contraction of elbow flexors, and it is possible to monitor the muscles’ contraction by limb circumferential strains. This paper presents a new wireless wearable anthropometric monitoring device made from fabric strain sensors for the human upper arm. The materials, structural design and calibration of the device are presented. Using an isokinetic testing system (Biodex3®) and the fabric monitoring device simultaneously, in situ measurements were carried out on elbow flexors in isometric contraction mode with ten subjects for a set of positions. Correlations between the measured values of limb circumferential strain and normalized torque were examined, and a linear relationship was found during isometric contraction. The average correlation coefficient between them is 0.938 ± 0.050. This wearable anthropometric device thus provides a useful index, the limb circumferential strain, for upper arm muscle contraction in isometric mode.

  3. Intersubband transitions in III-V semiconductors for novel infrared optoelectronic devices

    Science.gov (United States)

    Hossain, Mohammed Imrul

    the mid-infrared range. Our results provide insights in the detail charge transport and optical properties of this design concept. We are also investigating the possibility of inversionless lasing of this type of dual wavelength. My research encompasses the fabrication and processing of nanoscale semiconductor devices on high quality MBE grown wafers from our collaborators. The fabrication includes e-beam evaporation, photolithography, dry and wet etching, rapid thermal annealing, step height analysis, plasma etching, PECVD and also mask designing. The characterization and analysis of the optoelectronic devices is performed through FTIR (Fourier transform infra-red) spectroscopy. The material systems I have directly worked on are Silicon, GaAs/AlGaAs and InGaAs/InAlAs lattice matched to InP. Very recently I have also done some device processing in the InAlN/GaN material system.

  4. Solid state technology: A compilation. [on semiconductor devices

    Science.gov (United States)

    1973-01-01

    A compilation, covering selected solid state devices developed and integrated into systems by NASA to improve performance, is presented. Data are also given on device shielding in hostile radiation environments.

  5. Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

    OpenAIRE

    PARK, J.; Ho, J; Yun, H; Park, M.; Lee, J. H.; Seo, M.; Campbell, Eleanor E. B.; Lee, C; Pyo, S.; Lee, Sangwook

    2013-01-01

    We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

  6. Fabrication of polyimide based microfluidic channels for biosensor devices

    DEFF Research Database (Denmark)

    Zulfiqar, Azeem; Pfreundt, Andrea; Svendsen, Winnie Edith

    2015-01-01

    The ever-increasing complexity of the fabrication process of Point-of-care (POC) devices, due to high demand of functional versatility, compact size and ease-of-use, emphasizes the need of multifunctional materials that can be used to simplify this process. Polymers, currently in use for the fabr...... in uniformity of PI is also compared to the most commonly used SU8 polymer, which is a near UV sensitive epoxy resin. The potential applications of PI processing are POC and biosensor devices integrated with microelectronics....

  7. Fabrication of fine imaging devices using an external proton microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, T., E-mail: sakai.takuro@jaea.go.jp [Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), Tokai, Ibaraki 319-1195 (Japan); Yasuda, R.; Iikura, H.; Nojima, T. [Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), Tokai, Ibaraki 319-1195 (Japan); Koka, M.; Satoh, T.; Ishii, Y. [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan); Oshima, A. [Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047 (Japan)

    2014-08-01

    We have successfully fabricated novel microscopic imaging devices made from UV/EB curable resin using an external scanning proton microbeam. The devices are micro-structured fluorescent plates that consist of an array of micro-pillars that align periodically. The base material used in the pillars is UV/EB curable resin and each pillar contains phosphor grains. The pattern exposures were performed using a proton beam writing technique. The height of the pillars depends on the range of the proton beam. Optical microscopy and scanning electron microscopy have been used to characterize the samples. The results show that the fabricated fluorescent plates are expected to be compatible with both spatial resolution and detection efficiency.

  8. Device Concepts Based on Spin-dependent Transmission in Semiconductor Heterostructures

    Science.gov (United States)

    Ting, David Z. - Y.; Cartoixa, X.

    2004-01-01

    We examine zero-magnetic-field spin-dependent transmission in nonmagnetic semiconductor heterostructures with structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA), and report spin devices concepts that exploit their properties. Our modeling results show that several design strategies could be used to achieve high spin filtering efficiencies. The current spin polarization of these devices is electrically controllable, and potentially amenable to highspeed spin modulation, and could be integrated in optoelectronic devices for added functionality.

  9. High Power Semiconductor Devices and Solid State Switches for Pulsed Discharge Applications

    OpenAIRE

    Fleischmann, W.; Welleman, A.

    2006-01-01

    Based on long term experience, collected mainly with military applications like Rail Guns and Active Armour, a range of optimized semiconductor devices for pulsed applications was developed by ABB Switzerland Ltd and described in this presentation. The presented devices are optimized for pulsed discharge and fit very well for switching the short but high electrical power demand used for magnetic forming. Devices are available in different versions with silicon wafer diameters up to 120 mm and...

  10. RFID and Memory Devices Fabricated Integrally on Substrates

    Science.gov (United States)

    Schramm, Harry F.

    2004-01-01

    Electronic identification devices containing radio-frequency identification (RFID) circuits and antennas would be fabricated integrally with the objects to be identified, according to a proposal. That is to say, the objects to be identified would serve as substrates for the deposition and patterning of the materials of the devices used to identify them, and each identification device would be bonded to the identified object at the molecular level. Vacuum arc vapor deposition (VAVD) is the NASA derived process for depositing layers of material on the substrate. This proposal stands in contrast to the current practice of fabricating RFID and/or memory devices as wafer-based, self-contained integrated-circuit chips that are subsequently embedded in or attached to plastic cards to make smart account-information cards and identification badges. If one relies on such a chip to store data on the history of an object to be tracked and the chip falls off or out of the object, then one loses both the historical data and the means to track the object and verify its identity electronically. Also, in contrast is the manufacturing philosophy in use today to make many memory devices. Today s methods involve many subtractive processes such as etching. This proposal only uses additive methods, building RFID and memory devices from the substrate up in thin layers. VAVD is capable of spraying silicon, copper, and other materials commonly used in electronic devices. The VAVD process sprays most metals and some ceramics. The material being sprayed has a very strong bond with the substrate, whether that substrate is metal, ceramic, or even wood, rock, glass, PVC, or paper. An object to be tagged with an identification device according to the proposal must be compatible with a vacuum deposition process. Temperature is seldom an issue as the substrate rarely reaches 150 F (66 C) during the deposition process. A portion of the surface of the object would be designated as a substrate for

  11. Symmetrical waveguide devices fabricated by direct UV writing

    DEFF Research Database (Denmark)

    Færch, Kjartan Ullitz; Svalgaard, Mikael

    2002-01-01

    Power splitters and directional couplers fabricated by direct UV writing in index matched silica-on-silicon samples can suffer from an asymmetrical device performance, even though the UV writing is carried out in a symmetrical fashion. This effect originates from a reduced photosensitivity...... in the vicinity of previous exposed areas. The imbalance can be counteracted by an appropriate reduction of the applied scan velocity in areas, where a previous scan has been carried out nearby...

  12. Fabrication of Micro -Optical Devices by a Femtosecond Laser

    Institute of Scientific and Technical Information of China (English)

    Kazuyuki; Hirao

    2003-01-01

    Femtosecond laser is a perfect laser source for materials processing when high accuracy and small structure size are required. Due to the ultra short interaction time and the high peak power, the process is generally characterized by the absence of heat diffusion and, consequently molten layers. Various induced structures have been observed in materials after the femtosecond laser irradiation. Here, we report on fabrication of micro-optical devices by the femtosecond laser. 1) formation of optical waveg...

  13. Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

    Institute of Scientific and Technical Information of China (English)

    Du Gang; Liu Xiao-Yan; Han Ru-Qi

    2006-01-01

    A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.

  14. Two-photon polymerization for fabrication of biomedical devices

    Science.gov (United States)

    Ovsianikov, Aleksandr; Doraiswamy, Anand; Narayan, R.; Chichkov, B. N.

    2007-01-01

    Two-photon polymerization (2PP) is a novel technology which allows the fabrication of complex three-dimensional (3D) microstructures and nanostructures. The number of applications of this technology is rapidly increasing; it includes the fabrication of 3D photonic crystals [1-4], medical devices, and tissue scaffolds [5-6]. In this contribution, we discuss current applications of 2PP for microstructuring of biomedical devices used in drug delivery. While in general this sector is still dominated by oral administration of drugs, precise dosing, safety, and convenience are being addressed by transdermal drug delivery systems. Currently, main limitations arise from low permeability of the skin. As a result, only few types of pharmacological substances can be delivered in this manner [7]. Application of microneedle arrays, whose function is to help overcome the barrier presented by the epidermis layer of the skin, provides a very promising solution. Using 2PP we have fabricated arrays of hollow microneedles with different geometries. The effect of microneedle geometry on skin penetration is examined. Our results indicate that microneedles created using 2PP technique are suitable for in vivo use, and for integration with the next generation of MEMS- and NEMS-based drug delivery devices.

  15. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    Energy Technology Data Exchange (ETDEWEB)

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D. [Department of Material Science and Engineering, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Ankonina, G. [Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Photovoltaic Laboratory, Technion, Haifa 3200 (Israel)

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  16. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    Science.gov (United States)

    Mikhelashvili, V.; Padmanabhan, R.; Meyler, B.; Yofis, S.; Atiya, G.; Cohen-Hyams, Z.; Weindling, S.; Ankonina, G.; Salzman, J.; Kaplan, W. D.; Eisenstein, G.

    2015-10-01

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  17. A novel approach for the fabrication of all-inorganic nanocrystal solids: Semiconductor matrix encapsulated nanocrystal arrays

    Science.gov (United States)

    Moroz, Pavel

    Growing fossil fuels consumption compels researchers to find new alternative pathways to produce energy. Along with new materials for the conversion of different types of energy into electricity innovative methods for efficient processing of energy sources are also introduced. The main criteria for the success of such materials and methods are the low cost and compelling performance. Among different types of materials semiconductor nanocrystals are considered as promising candidates for the role of the efficient and cheap absorbers for solar energy applications. In addition to the anticipated cost reduction, the integration of nanocrystals (NC) into device architectures is inspired by the possibility of tuning the energy of electrical charges in NCs via nanoparticle size. However, the stability of nanocrystals in photovoltaic devices is limited by the stability of organic ligands which passivate the surface of semiconductors to preserve quantum confinement. The present work introduces a new strategy for low-temperature processing of colloidal nanocrystals into all-inorganic films: semiconductor matrix encapsulated nanocrystal arrays (SMENA). This methodology goes beyond the traditional ligand-interlinking scheme and relies on the encapsulation of morphologically-defined nanocrystal arrays into a matrix of a wide-band gap semiconductor, which preserves optoelectronic properties of individual nanoparticles. Fabricated solids exhibit excellent thermal stability, which is attributed to the heteroepitaxial structure of nanocrystal-matrix interfaces. The main characteristics and properties of these solids were investigated and compared with ones of traditionally fabricated nanocrystal films using standard spectroscopic, optoelectronic and electronic techniques. As a proof of concept, we. We also characterized electron transport phenomena in different types of nanocrystal films using all-optical approach. By measuring excited carrier lifetimes in either ligand-linked or

  18. Fabricating thin-film photovoltaic devices using ultra-sonic spray-coating (Presentation Recording)

    Science.gov (United States)

    Lidzey, David G.

    2015-10-01

    The scale-up of thin-film electronic devices requires a manufacture tool set that is capable of fabricating thin films at high speed over large areas. One such technique capable of such a task is ultra-sonic spray coating. Here, a target solution is fed onto a vibrating tip that breaks the solution up into very fine droplets, with such droplets being carried to a surface by a gas stream. Such ultra-sonic coating processes are already widely used in Electronics, Medical and Displays industries to create films having excellent smoothness and homogeneity. In this talk, I describe the use of ultra-sonic spray-coating to deposit a range of materials for thin-film optoelectronics. As our spray-coating system operates in air, it was first necessary to explore the relative sensitivity of various conjugated polymer / fullerene blends to an air-based process route. It is found that carbazole based co-polymers are particularly stable, and can be processed in air (by spin-coating) into organic photovoltaic devices (OPV) without any apparent loss in device efficiency. I then show that spray-coating can be used to deposit a range of semiconductor materials into smooth, thin-films, including PEDOT:PSS, MoOx (from a precursor) and a series of polymer:fullerene blends. Using such a technique, we are able to scale up an array of devices having an area of 7 cm2, and using a PBDTTT-EFT:PC70BM blend, obtain OPVs having a power conversion efficiency (PCE) of 8.7%. I then discuss spray-coating as a method to fabricate photovoltaic devices based on CH3NH3PbI(3-x)Clx perovskite films. Here, by optimization of deposition parameters, devices are created having a PCE of 11.1%.

  19. Thermoelectric Device Fabrication Using Thermal Spray and Laser Micromachining

    Science.gov (United States)

    Tewolde, Mahder; Fu, Gaosheng; Hwang, David J.; Zuo, Lei; Sampath, Sanjay; Longtin, Jon P.

    2016-02-01

    Thermoelectric generators (TEGs) are solid-state devices that convert heat directly into electricity. They are used in many engineering applications such as vehicle and industrial waste-heat recovery systems to provide electrical power, improve operating efficiency and reduce costs. State-of-art TEG manufacturing is based on prefabricated materials and a labor-intensive process involving soldering, epoxy bonding, and mechanical clamping for assembly. This reduces their durability and raises costs. Additive manufacturing technologies, such as thermal spray, present opportunities to overcome these challenges. In this work, TEGs have been fabricated for the first time using thermal spray technology and laser micromachining. The TEGs are fabricated directly onto engineering component surfaces. First, current fabrication techniques of TEGs are presented. Next, the steps required to fabricate a thermal spray-based TEG module, including the formation of the metallic interconnect layers and the thermoelectric legs are presented. A technique for bridging the air gap between two adjacent thermoelectric elements for the top layer using a sacrificial filler material is also demonstrated. A flat 50.8 mm × 50.8 mm TEG module is fabricated using this method and its performance is experimentally characterized and found to be in agreement with expected values of open-circuit voltage based on the materials used.

  20. Technology of Quantum Devices

    CERN Document Server

    Razeghi, Manijeh

    2010-01-01

    Technology of Quantum Devices offers a multi-disciplinary overview of solid state physics, photonics and semiconductor growth and fabrication. Readers will find up-to-date coverage of compound semiconductors, crystal growth techniques, silicon and compound semiconductor device technology, in addition to intersubband and semiconductor lasers. Recent findings in quantum tunneling transport, quantum well intersubband photodetectors (QWIP) and quantum dot photodetectors (QWDIP) are described, along with a thorough set of sample problems.

  1. Photon absorption models in nanostructured semiconductor solar cells and devices

    CERN Document Server

    Luque, Antonio

    2015-01-01

    This book is intended to be used by materials and device physicists and also solar cells researchers. It models the performance characteristics of nanostructured solar cells and resolves the dynamics of transitions between several levels of these devices. An outstanding insight into the physical behaviour of these devices is provided, which complements experimental work. This therefore allows a better understanding of the results, enabling the development of new experiments and optimization of new devices. It is intended to be accessible to researchers, but also to provide engineering tools w

  2. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Weihs, Timothy P. (Baltimore, MD); Barbee, Jr., Troy W. (Palto Alto, CA)

    2002-01-01

    Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

  3. Quantum transport through complex networks - from light-harvesting proteins to semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Kreisbeck, Christoph

    2012-06-18

    Electron transport through small systems in semiconductor devices plays an essential role for many applications in micro-electronics. One focus of current research lies on establishing conceptually new devices based on ballistic transport in high mobility AlGaAs/AlGa samples. In the ballistic regime, the transport characteristics are determined by coherent interference effects. In order to guide experimentalists to an improved device design, the characterization and understanding of intrinsic device properties is crucial. We develop a time-dependent approach that allows us to simulate experimentally fabricated, complex devicegeometries with an extension of up to a few micrometers. Particularly, we explore the physical origin of unexpected effects that have been detected in recent experiments on transport through Aharonov-Bohm waveguide-interferometers. Such interferometers can be configured as detectors for transfer properties of embedded quantum systems. We demonstrate that a four-terminal waveguide-ring is a suitable setup for measuring the transmission phase of a harmonic quantum dot. Quantum effects are not restricted exclusively to artificial devices but have been found in biological systems as well. Pioneering experiments reveal quantum effects in light-harvesting complexes, the building blocks of photosynthesis. We discuss the Fenna-Matthews-Olson complex, which is a network of coupled bacteriochlorophylls. It acts as an energy wire in the photosynthetic apparatus of green sulfur bacteria. Recent experimental findings suggest that energy transfer takes place in the form of coherent wave-like motion, rather than through classical hopping from one bacteriochlorophyll to the next. However, the question of why and how coherent transfer emerges in light-harvesting complexes is still open. The challenge is to merge seemingly contradictory features that are observed in experiments on two-dimensional spectroscopy into a consistent theory. Here, we provide such a

  4. Charge transport in nanoscale vertical organic semiconductor pillar devices

    Science.gov (United States)

    Wilbers, Janine G. E.; Xu, Bojian; Bobbert, Peter A.; de Jong, Michel P.; van der Wiel, Wilfred G.

    2017-01-01

    We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106 A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.

  5. Advanced Semiconductor Heterostructures Novel Devices, Potential Device Applications and Basic Properties

    CERN Document Server

    Stroscio, Michael A

    2003-01-01

    This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the pr

  6. On the design and fabrication of nanostructures and devices

    Science.gov (United States)

    Wei, Wei

    Nanotechnology is emerging into a new frontier in science and technology with potential impact on every aspect of human life. One of the major breakthroughs in today's nanotechnology is the discovery and preparation of new classes of nanomaterials and nanostructures. A large number of nanomaterials and nanostructures are synthesized and characterized with either new or profoundly enhanced properties or phenomena. However, there are several major challenges ahead need to be overcome before any substantial benefits can be brought to the market. One of the challenges that we need to address today is how to effectively integrate useful nanomaterials and nanostrucrures into functional devices and systems. Our mother nature gives us a classic example of how living organisms are built. Starting from a single cell, through its division and growth, it can self-assemble and become functional tissues and organs. Similar self-assemble approach has been adopted as a nano-fabrication technique to assemble nanomaterials and nanostructures into functional nanodevices. This technique has advantages of high precision and nanometer scale resolution. However, it requires a lot of effort to construct a single device and since the properties of individual nanostructures can be different, the fabricated devices may have different properties. In this dissertation, we design and fabricate nanostructures and devices using novel microfabrication techniques. In the first part of the dissertation, the design and fabrication of a variety of nanostructures, such as metal nanowires array, polymer nanowells, and nanostructured surfaces are discussed. In the second part, carbon nanotubes as a novel material has been explored as an example to demonstrate the integration of nanomaterials with novel microfabrication techniques to form a functional device. First, a resistive heating technique is developed to grow carbon nanotubes in localized regions, such as a nichrome heating coil. Then, MEMS micro

  7. GaN Nanowire Devices: Fabrication and Characterization

    Science.gov (United States)

    Scott, Reum

    The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

  8. Design and Fabrication of Complementary Metal-Oxide-Semiconductor Sensor Chip for Electrochemical Measurement

    Science.gov (United States)

    Yamazaki, Tomoyuki; Ikeda, Takaaki; Kano, Yoshiko; Takao, Hidekuni; Ishida, Makoto; Sawada, Kazuaki

    2010-04-01

    An electrochemical sensor has been developed on a single chip in which potentiostat and sensor electrodes are integrated. Sensor chips were fabricated using 5.0 µm complementary metal-oxide-semiconductor (CMOS) technology. All processes including the CMOS process, postprocessing for fabricating sensor electrodes and passivation layers, and packaging were performed at Toyohashi University of Technology. The integration makes it possible to measure electrochemical signals without having to use a bulky external electrochemical system. The potential between the working electrode and the reference electrode was controlled using an on-chip potentiostat composed of CMOS transistors. The chip characteristics were verified by electrochemical measurement, namely, by cyclic voltammetry. Potassium ferricyanide solution was measured to obtain results that fit well to the theoretical formula. A clear proportional relationship between peak height and the concentration of the sample solution was obtained using the proposed sensor chip, and the dynamic range obtained was 0.10 to 8.0 mM.

  9. Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hai-Ou; Cao, Gang; Xiao, Ming, E-mail: maaxiao@ustc.edu.cn; You, Jie; Wei, Da; Tu, Tao; Guo, Guang-Can; Guo, Guo-Ping, E-mail: gpguo@ustc.edu.cn [Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei, Anhui 230026 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Jiang, Hong-Wen [Department of Physics and Astronomy, University of California, Los Angeles, California 90095 (United States)

    2014-11-07

    We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise was measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.

  10. Interface Design Principles for High-Performance Organic Semiconductor Devices.

    Science.gov (United States)

    Nie, Wanyi; Gupta, Gautam; Crone, Brian K; Liu, Feilong; Smith, Darryl L; Ruden, P Paul; Kuo, Cheng-Yu; Tsai, Hsinhan; Wang, Hsing-Lin; Li, Hao; Tretiak, Sergei; Mohite, Aditya D

    2015-06-01

    Precise manipulation of organic donor-acceptor interfaces using spacer layers is demonstrated to suppress interface recombination in an organic photo-voltaic device. These strategies lead to a dramatic improvement in a model bilayer system and bulk-heterojunction system. These interface strategies are applicable to a wide variety of donor-acceptor systems, making them both fundamentally interesting and technologically relevant for achieving high efficiency organic electronic devices.

  11. Fabrication and Characterization of Organic/Inorganic Photovoltaic Device

    Science.gov (United States)

    Guvenc, Ali Bilge

    Energy is central to achieving the goals of sustainable development and will continue to be a primary engine for economic development. In fact, access to and consumption of energy is highly effective on the quality of life. The consumption of all energy sources have been increasing and the projections show that this will continue in the future. Unfortunately, conventional energy sources are limited and they are about to run out. Solar energy is one of the major alternative energy sources to meet the increasing demand. Photovoltaic devices are one way to harvest energy from sun and as a branch of photovoltaic devices organic bulk heterojunction photovoltaic devices have recently drawn tremendous attention because of their technological advantages for actualization of large-area and cost effective fabrication. The research in this dissertation focuses on both the mathematical modelling for better and more efficient characterization and the improvement of device power conversion efficiency. In the first part, we studied the effect of incident light power on the space charge regions of the Schottky barriers of the organic bulk heterojunction photovoltaic devices, the current-voltage characteristics and performance of the devices and built a current-voltage model for the devices that involves these effects. The incident light power showed an effect on the Schottky barriers of the devices by changing the width of the space charge regions. This change directly affects the reverse bias current-voltage curves by increasing the current values and the slope of the curves. But under excessive incident light power; the space charge regions merge, the devices break down and work as ohmic devices. In the second part, we combined the two improvement methods, improving the charge carrier transport and improving absorption of the organic bulk heterojunction photovoltaic devices. For charge carrier transport improvement, we presented deoxyribonucleic acid complexes as hole collecting

  12. Center for Semiconductor Materials and Device Modeling: expanding collaborative research opportunities between government, academia, and industry

    Science.gov (United States)

    Perconti, Philip; Bedair, Sarah S.; Bajaj, Jagmohan; Schuster, Jonathan; Reed, Meredith

    2016-09-01

    To increase Soldier readiness and enhance situational understanding in ever-changing and complex environments, there is a need for rapid development and deployment of Army technologies utilizing sensors, photonics, and electronics. Fundamental aspects of these technologies include the research and development of semiconductor materials and devices which are ubiquitous in numerous applications. Since many Army technologies are considered niche, there is a lack of significant industry investment in the fundamental research and understanding of semiconductor technologies relevant to the Army. To address this issue, the US Army Research Laboratory is establishing a Center for Semiconductor Materials and Device Modeling and seeks to leverage expertise and resources across academia, government and industry. Several key research areas—highlighted and addressed in this paper—have been identified by ARL and external partners and will be pursued in a collaborative fashion by this Center. This paper will also address the mechanisms by which the Center is being established and will operate.

  13. Surface micromachined PDMS microfluidic devices fabricated using a sacrificial photoresist

    Science.gov (United States)

    Ganapathy Subramani, Balasubramanian; Selvaganapathy, Ponnambalam Ravi

    2009-01-01

    PDMS is a widely used material for construction of microfluidic devices. The traditional PDMS microfabrication process, although versatile, cannot be used to form microfluidic devices with embedded tall topological features, such as thick-film electrodes and porous reactor beds. This paper presents an elegant surface micromachining process for microfluidic devices that allows complete leak-proof sealing and a conformal contact of the PDMS with tall pre-existing topographical features and demonstrates this approach by embedding 6 µm thick Ag/AgCl (high capacity 1680 µA s) electrodes inside the microchannels. In this process, thin spin-cast films of the PDMS are used as the structural material and a photoresist is used as the sacrificial material. A crucial parameter, namely adhesion of the spun-cast structural layer to the substrate, was characterized for different pre-polymer ratios using a standard tensile test, and a 1:3 (curing agent:base) combination was found to be the best with a maximum adhesion strength of 7.2 MPa. The elastic property of the PDMS allowed extremely fast release times of ~1 min of the fabricated microchannels. The versatility of this process was demonstrated by the fabrication of a pneumatic microvalve with multi-layered microchannel geometry. The valve closure occurred at 6.37 kPa. Preliminary results of this paper have been presented at the Canadian Workshop on MEMS and Microfluidics, Montréal, Canada, August 2007.

  14. Off-axis electron holography for the measurement of active dopants in silicon semiconductor devices

    Science.gov (United States)

    Cooper, David

    2016-11-01

    There is a need in the semiconductor industry for a dopant profiling technique with nm-scale resolution. Here we demonstrate that off-axis electron holography can be used to provide maps of the electrostatic potential in semiconductor devices with nm-scale resolution. In this paper we will discuss issues regarding the spatial resolution and precision of the technique. Then we will discuss problems with specimen preparation and how this affects the accuracy of the measurements of the potentials. Finally we show results from experimental off-axis electron holography applied to nMOS and pMOS CMOS devices grown on bulk silicon and silicon- on-insulator type devices and present solutions to common problems that are encountered when examining these types of devices.

  15. SEMICONDUCTOR DEVICES: Characteristics of a novel biaxial capacitive MEMS accelerometer

    Science.gov (United States)

    Linxi, Dong; Yongjie, Li; Haixia, Yan; Lingling, Sun

    2010-05-01

    A novel MEMS accelerometer with grid strip capacitors is developed. The mechanical and electrical noise can be reduced greatly for the novel structure design. ANSOFT-Maxwell software was used to analyze the fringing electric field of the grid strip structure and its effects on the designed accelerometer. The effects of the width, thickness and overlapping width of the grid strip on the sensing capacitance are analyzed by using the ANSOFT-Maxwell software. The results show that the parameters have little effect on the characteristics of the presented accelerometer. The designed accelerometer was fabricated based on deep RIE and silicon-glass bonding processes. The preliminary tested sensitivities are 0.53 pF/g and 0.49 pF/g in the x and y axis directions, respectively. A resonator with grid strip structure was also fabricated whose tested quality factor is 514 in air, which proves that the grid strip structure can reduce mechanical noise.

  16. Characteristic finite difference fractional step methods for three-dimensional semiconductor device of heat conduction

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The mathematical model of the semiconductor device of heat conduction has been described by a system of four equations. The optimal order estimates in L2 norm are derived for the error in the approximates solution, putting forward a kind of characteristic finite difference fractional step methods.

  17. Ultrafast dynamics in semiconductor optical amplifiers and all-optical processing: Bulk versus quantum dot devices

    DEFF Research Database (Denmark)

    Mørk, Jesper; Berg, Tommy Winther; Magnúsdóttir, Ingibjörg

    2003-01-01

    We discuss the dynamical properties of semiconductor optical amplifiers and the importance for all-optical signal processing. In particular, the dynamics of quantum dot amplifiers is considered and it is suggested that these may be operated at very high bit-rates without significant patterning...... effects, as opposed to quantum well or bulk devices....

  18. Injection induced enhancement of supercurrent in a mesoscopic three terminal superconductor semiconductor device

    DEFF Research Database (Denmark)

    Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Jensen, S

    2001-01-01

    The studied devices consist of three superconducting (Al) electrodes connected to the same piece of degenerate Semiconductor (n++ GaAs) in a planar geometry. When a current is injected from one of the superconducting electrodes at an injection bias V = Delta (T)/e, the critical supercurrent betwe...

  19. Localized plasmon-coupled semiconductor nanocrystal emitters for innovative device applications

    OpenAIRE

    Soğancı, İbrahim Murat

    2007-01-01

    Ankara : The Department of Electrical and Electronics Engineering and the Institute of Engineering and Sciences of Bilkent University, 2007. Thesis (Master's) -- Bilkent University, 2007. Includes bibliographical references leaves 74-83 Quantum confinement allows for the development of novel luminescent materials such as colloidal semiconductor quantum dots for a variety of photonic applications spanning from biomedical labeling to white light generation. However, such devic...

  20. A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Muscato, Orazio; Di Stefano, Vincenza [Univ. degli Studi di Catania (Italy). Dipt. di Matematica e Informatica; Wagner, Wolfgang [Weierstrass-Institut fuer Angewandte Analysis und Stochastik (WIAS) Leibniz-Institut im Forschungsverbund Berlin e.V., Berlin (Germany)

    2012-11-01

    This paper is concerned with electron transport and heat generation in semiconductor devices. An improved version of the electrothermal Monte Carlo method is presented. This modification has better approximation properties due to reduced statistical fluctuations. The corresponding transport equations are provided and results of numerical experiments are presented.

  1. Development of heavy-ion irradiation technique for single-event in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

    1997-03-01

    Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

  2. Roll-to-roll fabricated lab-on-a-chip devices

    DEFF Research Database (Denmark)

    Vig, Asger Laurberg; Mäkelä, Tapio; Majander, Päivi;

    2011-01-01

    We present a high-volume fabrication technique for making polymer lab-on-a-chip devices. Microfluidic separation devices, relying on pinched flow fraction, are roll-to-roll fabricated in a cellulose acetate (CA) film at a volume of 360 devices h−1 for a cost of approximately 0.5 euro/device. The ...

  3. Femtosecond laser fabrication of microfluidic channels for organic photonic devices.

    Science.gov (United States)

    Chaitanya Vishnubhatla, Krishna; Clark, Jenny; Lanzani, Guglielmo; Ramponi, Roberta; Osellame, Roberto; Virgili, Tersilla

    2009-11-01

    We report on innovative application of microchannels with access holes fabricated by femtosecond laser irradiation followed by chemical etching. This technique allows us to demonstrate a novel approach to the achievement of organic photonic devices in which the properties of a conjugated polymer in solution are exploited in a microfluidic configuration to produce an easy-to-integrate photonic device. Filling the microchannel with a diluted polyfluorene solution, we exploit the unique properties of isolated polymeric chains such as ultrafast gain switching (switching response time of 150 fs) with a 100% on-off ratio. In addition, by dispersing nanoparticles in the polymeric solution we are able to achieve random lasing in the microchannel.

  4. Fabrication of Hybrid Organic Photovoltaic Devices Using Electrostatic Spray Method

    Directory of Open Access Journals (Sweden)

    Zhe-Wei Chiu

    2014-01-01

    Full Text Available Hybrid organic photovoltaic devices (OPVDs are fabricated using the electrostatic spray (e-spray method and their optical and electrical properties are investigated. E-spray is used to deposit a hybrid film (P3HT: PCBM/nanodiamond with morphology and optical characteristics onto OPVDs. The root-mean-square roughness and optical absorption increase with increasing nanodiamond content. The performance of e-spray is comparable to that of the spin-coating method under uniform conditions. The device takes advantage of the high current density, power conversion efficiency, and low cost. Nanodiamond improves the short-circuit current density and power conversion efficiency. The best performance was obtained with 1.5 wt% nanodiamond content, with a current density of 7.28 mA/cm2 and a power conversion efficiency of 2.25%.

  5. Liquid-crystalline ordering as a concept in materials science: from semiconductors to stimuli-responsive devices.

    Science.gov (United States)

    Fleischmann, Eva-Kristina; Zentel, Rudolf

    2013-08-19

    While the unique optical properties of liquid crystals (LCs) are already well exploited for flat-panel displays, their intrinsic ability to self-organize into ordered mesophases, which are intermediate states between crystal and liquid, gives rise to a broad variety of additional applications. The high degree of molecular order, the possibility for large scale orientation, and the structural motif of the aromatic subunits recommend liquid-crystalline materials as organic semiconductors, which are solvent-processable and can easily be deposited on a substrate. The anisotropy of liquid crystals can further cause a stimuli-responsive macroscopic shape change of cross-linked polymer networks, which act as reversibly contracting artificial muscles. After illustrating the concept of liquid-crystalline order in this Review, emphasis will be placed on synthetic strategies for novel classes of LC materials, and the design and fabrication of active devices.

  6. Inorganic photovoltaic devices fabricated using nanocrystal spray deposition.

    Science.gov (United States)

    Foos, Edward E; Yoon, Woojun; Lumb, Matthew P; Tischler, Joseph G; Townsend, Troy K

    2013-09-25

    Soluble inorganic nanocrystals offer a potential route to the fabrication of all-inorganic devices using solution deposition techniques. Spray processing offers several advantages over the more common spin- and dip-coating procedures, including reduced material loss during fabrication, higher sample throughput, and deposition over a larger area. The primary difference observed, however, is an overall increase in the film roughness. In an attempt to quantify the impact of this morphology change on the devices, we compare the overall performance of spray-deposited versus spin-coated CdTe-based Schottky junction solar cells and model their dark current-voltage characteristics. Spray deposition of the active layer results in a power conversion efficiency of 2.3 ± 0.3% with a fill factor of 45.7 ± 3.4%, Voc of 0.39 ± 0.06 V, and Jsc of 13.3 ± 3.0 mA/cm(2) under one sun illumination.

  7. Device overshield for mass-sensing enhancement (DOME) structure fabrication

    Science.gov (United States)

    Sauer, Vincent T. K.; Freeman, Mark R.; Hiebert, Wayne K.

    2010-10-01

    Nanoelectromechanical systems (NEMS) have demonstrated excellent sensitivity in their ability to measure small particle masses even to the point of being able to differentiate between different chemical species based on their mass. NEMS mass responsivity, however, depends upon mechanical mode profile and adsorption location, a fact which considerably complicates mass-sensing analysis and reduces overall sensitivity. We introduce a fabrication scheme-termed device overshield for mass-sensing enhancement (DOME) involving structures which physically limit the position at which a flux of material is deposited onto a NEMS resonating sensor. This surface nanomachining process uses silicon-on-insulator, silicon dioxide and silicon nitride layers to produce multiple, independent structural levels. It could be used to create MEMS over NEMS structures, to fabricate integrated shadow-masks resistant to high temperature processing, or for enhancing the mass-sensing performance of underlying nanomechanical devices. The DOME structures do not appear to significantly affect the resonator response and are shown to successfully block incoming mass from being deposited on specified portions of a NEMS beam.

  8. Accelerated Aging System for Prognostics of Power Semiconductor Devices

    Science.gov (United States)

    Celaya, Jose R.; Vashchenko, Vladislav; Wysocki, Philip; Saha, Sankalita

    2010-01-01

    Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

  9. Energy Conversion Application of Chemicurrents Induced in Metal-Semiconductor Nanostructured Devices

    Science.gov (United States)

    Dasari, Suhas Kiran

    Hydrogen is one the most attractive and suitable energy systems for generation of power in the future with high efficiencies and renewable properties. Nanoscale materials, because of their surface and physical properties are the promising candidates for the development of high performance energy conversion devices, essential components to ensure the efficient operation of the infrastructure and to facilitate the wide spread implementation of hydrogen technologies. This work realizes the use of solid state energy conversion concept to develop metal-semiconductor, metal-oxide architecture devices for electrolyte free conversion of chemical energy to electrical energy by hydrogen oxidation process. This investigation addresses the synthesis of these nanostructure devices by selection of suitable system material combinations, electrical and surface morphological characterization leading to the successful implementation in generation of chemicurrents. Also, the hydrogen oxidation process on each nanostructure device is elucidated with the help of corresponding mechanisms and the performance of each system developed was evaluated based on the resulting output efficiency. The two systems (metal-semiconductor and metal-oxide) realized, showed excellent chemical to electrical energy conversion abilities. Compared to metal-semiconductor nanostructure devices, metal-oxide systems exhibited better energy conversion abilities for indefinitely long duration of time at room temperature. The electron yield observed in considered metal-oxide systems can be sufficient for their use in practical applications. A continued realization of these metal-oxide systems with different material combinations would lead to more ecologically friendly and sustainable energy economics.

  10. Using Deep Level Transient Spectroscopy (DLTS) to characterize defects in semiconductor devices

    Science.gov (United States)

    Lang, David

    2012-02-01

    Deep Level Transient Spectroscopy (DLTS) is a member of the class of instrumentation methods that utilizes the detection of trapped electronic charge to characterize defects in solids. Such methods detect this charge either directly, e.g. via capacitance measurements, or indirectly, e.g. via the current associated with the release of trapped charge. These types of instrumentation have been widely used since the dawn of solid-state physics, particularly for nonradiative defects in semiconductors and insulators. In the case of semiconductor devices, the highly sensitive capacitive detection of trapped charge in the junction depletion layer makes these methods particularly powerful. The DLTS method introduced the concept of time-domain filtering (the so-called ``rate window'') to create a defect spectrum from the transient response of the device versus temperature. This talk will give an overview of DLTS, with particular emphasis on the correlation between defects and device performance.

  11. A semiconductor device noise model: integration of Poisson type stochastic ohmic contact conditions with semiclassical transport

    Science.gov (United States)

    Noaman, B. A.; Korman, C. E.; Piazza, A. J.

    2007-06-01

    In this paper we show an approach to couple two stochastic processes to describe the dynamics of independent carriers in semiconductor devices: the launch time of carriers from the contacts is described by independent Poisson launch processes, and the stochastic motion of carriers due to scattering inside the device is described by inhomogeneous Poisson type Markov processes according to the semiclassical transport theory. The coupling of the Poisson type stochastic launch process to the semiclassical dynamics will be shown, and the resulting Ohmic contact boundary conditions will be derived. For proof of concept, an expression for the autocovariance for terminal current noise for one point contact will be shown which can be easily extended to a real semiconductor device with multiple contacts.

  12. SEMICONDUCTOR DEVICES: Trench gate IGBT structure with floating P region

    Science.gov (United States)

    Mengliang, Qian; Zehong, Li; Bo, Zhang; Zhaoji, Li

    2010-02-01

    A new trench gate IGBT structure with a floating P region is proposed, which introduces a floating P region into the trench accumulation layer controlled IGBT (TAC-IGBT). The new structure maintains a low on-state voltage drop and large forward biased safe operating area (FBSOA) of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage. In addition, it enlarges the short circuit safe operating area (SCSOA) of the TAC-IGBT, and is simple in fabrication and design. Simulation results indicate that, for IGBT structures with a breakdown voltage of 1200 V, the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.

  13. SEMICONDUCTOR DEVICES: Deep submicron PDSOI thermal resistance extraction

    Science.gov (United States)

    Jianhui, Bu; Jinshun, Bi; Linmao, Xi; Zhengsheng, Han

    2010-09-01

    Deep submicron partially depleted silicon on insulator (PDSOI) MOSFETs with H-gate were fabricated based on the 0.35 μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect (SHE) has a great influence on SOI, extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer. The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET; and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel. This offers a great help to SHE modeling and parameter extraction.

  14. Degradation, Reliability, and Failure of Semiconductor Electronic Devices

    Science.gov (United States)

    2006-11-01

    determines its ability to conduct heat away that is generated by the operation of the device and therefore its operating temperature. The temperature...an AlN cap heated to (a) 1650ºC or (b) 1700ºC for 30 min. Though we are now able to anneal the implanted SiC up to temperatures as high as...outweighed the negative effects of th stent defects. Thus, as shown in Fig. 12b, the regio anted near the junctions was implanted with 1019 cm Al, while

  15. Neural-Based Models of Semiconductor Devices for SPICE Simulator

    Directory of Open Access Journals (Sweden)

    Hanene B. Hammouda

    2008-01-01

    Full Text Available The paper addresses a simple and fast new approach to implement Artificial Neural Networks (ANN models for the MOS transistor into SPICE. The proposed approach involves two steps, the modeling phase of the device by NN providing its input/output patterns, and the SPICE implementation process of the resulting model. Using the Taylor series expansion, a neural based small-signal model is derived. The reliability of our approach is validated through simulations of some circuits in DC and small-signal analyses.

  16. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  17. Characterization of the electronic properties of magnetic and semiconductor devices using scanning probe techniques

    Science.gov (United States)

    Schaadt, Daniel Maria

    In the first part of this dissertation, scanning probe techniques are used in the study of localized charge deposition and subsequent transport in Co nanoclusters embedded in a SiO2 matrix are presented, and the application of this material in a hybrid magneto-electronic device for magnetic field sensing is described. Co nanoclusters are charged by applying a bias voltage pulse between a conductive tip and the sample, and electrostatic force microscopy is used to image charged areas. An exponential decay in the peak charge density is observed with decay times dependent on the nominal Co film thickness and on the sign of the deposited charge. The results are interpreted as a consequence of Coulomb-blockade effects. This study leads to the design of a hybrid magneto-electronic device, in which Co nanoclusters embedded in SiO2 are incorporated into the gate of a Si metal-oxide-semiconductor field-effect transistor. Current flow through the Co nanoclusters leads to a buildup of electronic charge within the gate, and consequently to a transistor threshold voltage shift that varies with applied external magnetic field. The shift in threshold voltage results in an exponential change in subthreshold current and a quadratic change in saturation current. A detailed analysis of the device operation is presented. The second part of this dissertation focuses on the characterization of electronic properties of GaN-based heterostructure devices. Scanning capacitance microscopy (SCM) and spectroscopy (SCS) are used to investigate lateral variations in the transistor threshold voltage and the frequency-dependent response of surface charges and of charge in the two-dimensional electron gas (2DEG). The technique is described in detail, electrostatic simulations performed to study the influence of the probe tip geometry on the measured dC/dV spectra are presented, and the limitations of the SCS technique in a variety of applications are evaluated. Features in SCM images and maps of

  18. The electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

    CERN Document Server

    Ohshima, T; Ishida, Y

    2003-01-01

    The n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100 degC. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200degC for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260cm sup 2 /V centre dot s. The leakage current of gate oxide was of a few tens of nA/cm sup 2 at an electric field range below 8.5 MV/cm, and breakdown began around 8.5MV/cm. (author)

  19. Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

    Science.gov (United States)

    Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

    2015-09-01

    We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10-2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

  20. A new method to fabricate size-selected compound semiconductor nanocrystals: aerotaxy

    Science.gov (United States)

    Deppert, Knut; Bovin, Jan-Olov; Malm, Jan-Olle; Samuelson, Lars

    1996-11-01

    A new method of fabrication is proposed to produce compound semiconductor nanocrystals with very narrow size distribution. It utilizes the formation of an aerosol of ultrafine group-III particles and their self-limited reaction with a group-V containing precursor at elevated temperatures. Since the new material grows in a self-organized fashion within the aerosol phase we call this process aerotaxy. GaAs nanocrystals, of approximate diameter 10 nm, have been produced by this method employing the reaction of Ga particles with arsine. The size of the final GaAs particle is self-limited by the size of the introduced size-selected Ga particle. This size can be tuned carefully. Transmission electron microscopy images exhibit good crystallinity of the particles. The kinetics of the transformation of Ga particles into GaAs nanocrystals depend on temperature and arsine flow. The starting temperature of this conversion was found to be as low as 200°C, which may be the result of a very high {V}/{III} ratio. Studies on the variation of particle diameter with the conditions of formation have indicated activation energies for different process steps. Our approach opens the possibility to produce large quantities of size-selected nanocrystals of compound semiconductors.

  1. Hot-Electron Transfer from Semiconductor Nanocrystals

    National Research Council Canada - National Science Library

    William A. Tisdale; Kenrick J. Williams; Brooke A. Timp; David J. Norris; Eray S. Aydil; X.-Y. Zhu

    2010-01-01

    ... that limits device efficiency. Although fabricating the semiconductor in a nanocrystalline morphology can slow this cooling, the transfer of hot carriers to electron and hole acceptors has not yet been thoroughly demonstrated...

  2. Floating substrate luminescence from silicon rich oxide metal-oxide-semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sánchez, A., E-mail: alfredo.morales@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S. C., Unidad Monterrey-PIIT, 66600 Apodaca, Nuevo León (Mexico); Domínguez, C. [Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC). 08193 Barcelona (Spain); Barreto, J. [Nanoscale Physics Research Laboratory, University of Birmingham, Birmingham, B15 2TT (United Kingdom); Aceves-Mijares, M. [INAOE, Electronics Department, Apartado 51, 72000 Puebla (Mexico); Licea-Jiménez, L. [Centro de Investigación en Materiales Avanzados S. C., Unidad Monterrey-PIIT, 66600 Apodaca, Nuevo León (Mexico); Luna-López, J.A.; Carrillo, J. [CIDS-ICUAP. Benemérita Universidad Autónoma de Puebla. 72570 Puebla (Mexico)

    2013-03-01

    The electro-optical properties of metal-oxide-semiconductor devices with embedded Si nanoparticles in silicon-rich (4 at.%) oxide films have been studied. Devices show intense visible continuous luminescence not only in the regular metal-oxide-semiconductor configuration, but when biased via surface electrodes (floating substrate) separated 10 μm. Electroluminescence manifests as extremely bright randomly scattered discrete spots on the gate area or the periphery of the devices depending on the bias direction. The mechanism responsible for the surface-electroluminescence has been related to the recombination of electron–hole pairs injected through enhanced current paths within the silicon-rich oxide film. - Highlights: ► Silicon rich oxide (SRO) based metal-oxide-semiconductor like luminescent devices. ► Electroluminescence (EL) in floating-substrate, horizontal electrodes configuration. ► EL is observed as multiple shining spots with surface electrodes. ► Preferential current paths established in the SRO between several electrodes.

  3. Distributed and coupled 2D electro-thermal model of power semiconductor devices

    Science.gov (United States)

    Belkacem, Ghania; Lefebvre, Stéphane; Joubert, Pierre-Yves; Bouarroudj-Berkani, Mounira; Labrousse, Denis; Rostaing, Gilles

    2014-05-01

    The development of power electronics in the field of transportations (automotive, aeronautics) requires the use of power semiconductor devices providing protection and diagnostic functions. In the case of series protections power semiconductor devices which provide protection may operate in shortcircuit and act as a current limiting device. This mode of operations is very constraining due to the large dissipation of power. In these particular conditions of operation, electro-thermal models of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors based on the coupling between two computation softwares (Matlab and Cast3M) is described in this paper. The 2D electro-thermal model is able to predict (i) the temperature distribution on chip surface well as in the volume under short-circuit operations, (ii) the effect of the temperature on the distribution of the current flowing within the die and (iii) the effects of the ageing of the metallization layer on the current density and the temperature. In this paper, the electrical and thermal models are described as well as the implemented coupling scheme.

  4. Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

    Science.gov (United States)

    Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

    2015-05-26

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

  5. An occupational exposure assessment for engineered nanoparticles used in semiconductor fabrication.

    Science.gov (United States)

    Shepard, Michele Noble; Brenner, Sara

    2014-03-01

    Engineered nanoparticles of alumina, amorphous silica, and ceria are used in semiconductor device fabrication during wafer polishing steps referred to as 'chemical mechanical planarization' (CMP). Some metal oxide nanoparticles can impact the biological response of cells and organ systems and may cause adverse health effects; additional research is necessary to better understand potential risks from nanomaterial applications and occupational exposure scenarios. This study was conducted to assess potential airborne exposures to nanoparticles and agglomerates using direct-reading instruments and filter-based samples to characterize workplace aerosols by particle number, mass, size, composition, and morphology. Sampling was repeated for tasks in three work areas (fab, subfab, wastewater treatment) at a facility using engineered nanoparticles for CMP. Real-time measurements were collected using a condensation particle counter (CPC), optical particle counter, and scanning mobility particle spectrometer (SMPS). Filter-based samples were analyzed for total mass or the respirable fraction, and for specific metals of interest. Additional air sample filters were analyzed by transmission electron microscopy with energy dispersive x-ray spectroscopy (TEM/EDX) for elemental identification and to provide data on particle size, morphology, and concentration. Peak concentrations measured on the CPC ranged from 1 to 16 particles per cubic centimeter (P cm(-3)) for background and from 4 to 74 P cm(-3) during tasks sampled in the fab; from 1 to 60 P cm(-3) for background and from 3 to 84 P cm(-3) for tasks sampled in the subfab; and from 1160 to 45 894 P cm(-3) for background and from 1710 to 45 519 P cm(-3) during wastewater treatment system filter change tasks. Significant variability was seen among the repeated task measurements and among background comparisons in each area. Several data analysis methods were used to compare each set of task and background measurements. Increased

  6. Fabrication of Micro -Optical Devices by a Femtosecond Laser

    Institute of Scientific and Technical Information of China (English)

    Jianrong Qiu; Kazuyuki Hirao

    2003-01-01

    Femtosecond laser is a perfect laser source for materials processing when high accuracy and small structure size are required. Due to the ultra short interaction time and the high peak power, the process is generally characterized by the absence of heat diffusion and, consequently molten layers. Various induced structures have been observed in materials after the femtosecond laser irradiation. Here, we report on fabrication of micro-optical devices by the femtosecond laser. 1) formation of optical waveguide with internal loss less than 0.5dB/cm in the wavelength region from 1.2 to 1.6 mm, by translating a silica glass perpendicular to the axis of the focused femtosecond laser beam; 2) nano-scale valence state manipulation of active ions inside transparent materials; 3) space-selective precipitation and control of metal nanoparticles inside transparent materials; The mechanisms and applications of the femtosecond laser induced phenomena were also discussed.

  7. Tritium Systems Test Assembly: design for major device fabrication review

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, J.L.; Sherman, R.H.

    1977-06-01

    This document has been prepared for the Major Device Fabrication Review for the Tritium Systems Test Assembly (TSTA). The TSTA is dedicated to the development, demonstration, and interfacing of technologies related to the deuterium-tritium fuel cycle for fusion reactor systems. The principal objectives for TSTA are: (a) demonstrate the fuel cycle for fusion reactor systems; (b) develop test and qualify equipment for tritium service in the fusion program; (c) develop and test environmental and personnel protective systems; (d) evaluate long-term reliability of components; (e) demonstrate long-term safe handling of tritium with no major releases or incidents; and (f) investigate and evaluate the response of the fuel cycle and environmental packages to normal, off-normal, and emergency situations. This document presents the current status of a conceptual design and cost estimate for TSTA. The total cost to design, construct, and operate TSTA through FY-1981 is estimated to be approximately $12.2 M.

  8. Micro fabrication of biodegradable polymer drug delivery devices

    DEFF Research Database (Denmark)

    Nagstrup, Johan

    The pharmaceutical industry is presently facing several obstacles in developing oral drug delivery systems. This is primarily due to the nature of the discovered drug candidates. The discovered drugs often have poor solubility and low permeability across the gastro intestinal epithelium. Furtherm...... the developed devices. Additionally, it has been shown that it is possible to control the release of drug by adding polymeric coatings........ Furthermore, they are often degraded before they can be absorbed. The result is low bioavailability of the drugs. To overcome these challenges, better drug delivery systems need to be developed. Recently, micro systems have emerged as promising candidates to solve the challenges of poor solubility, low...... permeability and degradation. These systems are for the majority based on traditional materials used in micro technology, such as SU-8, silicon, poly(methyl methacrylate). The next step in developing these new drug delivery systems is to replace classical micro fabrication materials with biodegradable polymers...

  9. Biaxial testing for fabrics and foils optimizing devices and procedures

    CERN Document Server

    Beccarelli, Paolo

    2015-01-01

    This book offers a well-structured, critical review of current design practice for tensioned membrane structures, including a detailed analysis of the experimental data required and critical issues relating to the lack of a set of design codes and testing procedures. The technical requirements for biaxial testing equipment are analyzed in detail, and aspects that need to be considered when developing biaxial testing procedures are emphasized. The analysis is supported by the results of a round-robin exercise comparing biaxial testing machines that involved four of the main research laboratories in the field. The biaxial testing devices and procedures presently used in Europe are extensively discussed, and information is provided on the design and implementation of a biaxial testing rig for architectural fabrics at Politecnico di Milano, which represents a benchmark in the field. The significance of the most recent developments in biaxial testing is also explored.

  10. Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information

    DEFF Research Database (Denmark)

    Ma, Ke; Bahman, Amir Sajjad; Beczkowski, Szymon;

    2015-01-01

    loading but also the device rating as input variables. The quantified correlation between the power loss, thermal impedance and silicon area of Insulated Gate Bipolar Transistor (IGBT) is mathematically established. By this new modeling approach, all factors that have impacts to the loss and thermal......Thermal loading of power devices are closely related to the reliability performance of the whole converter system. The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices. In the existing loss and thermal...... models, only the electrical loadings are focused and treated as design variables, while the device rating is normally pre-defined by experience with limited design flexibility. Consequently, a more complete loss and thermal model is proposed in this paper, which takes into account not only the electrical...

  11. Accelerator-based electron beam technologies for modification of bipolar semiconductor devices

    Science.gov (United States)

    Pavlov, Y. S.; Surma, A. M.; Lagov, P. B.; Fomenko, Y. L.; Geifman, E. M.

    2016-09-01

    Radiation processing technologies for static and dynamic parameters modification of silicon bipolar semiconductor devices implemented. Devices of different classes with wide range of operating currents (from a few mA to tens kA) and voltages (from a few volts to 8 kV) were processed in large scale including power diodes and thyristors, high-frequency bipolar and IGBT transistors, fast recovery diodes, pulsed switching diodes, precise temperature- compensated Zener diodes (in general more than fifty 50 device types), produced by different enterprises. The necessary changes in electrical parameters and characteristics of devices caused by formation in the device structures of electrically active and stable in the operating temperature range sub-nanoscale recombination centres. Technologies implemented in the air with high efficiency and controllability, and are an alternative to diffusion doping of Au or Pt, γ-ray, proton and low-Z ion irradiation.

  12. Loss and thermal model for power semiconductors including device rating information

    DEFF Research Database (Denmark)

    Ma, Ke; Bahman, Amir Sajjad; Beczkowski, Szymon;

    2014-01-01

    The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices. In the existing loss and thermal models, only the electrical loadings are focused and treated as design variables, while the device rating is normally...... pre-defined by experience with poor design flexibility. Consequently a more complete loss and thermal model is proposed in this paper, which takes into account not only the electrical loading but also the device rating as input variables. The quantified correlation between the power loss, thermal...... impedance and silicon area of Insulated Gate Bipolar Transistor (IGBT) is mathematically established. By this new modeling approach, all factors that have impacts to the loss and thermal profiles of power devices can be accurately mapped, enabling more design freedom to optimize the efficiency and thermal...

  13. Complete Loss and Thermal Model of Power Semiconductors Including Device Rating Information

    DEFF Research Database (Denmark)

    Ma, Ke; Bahman, Amir Sajjad; Beczkowski, Szymon

    2015-01-01

    profiles of the power devices can accurately be mapped, enabling more design freedom to optimize the efficiency and thermal loading of the power converter. The proposed model can be further improved by experimental tests, and it is well agreed by both circuit and Finite Element Method (FEM) simulation......Thermal loading of power devices are closely related to the reliability performance of the whole converter system. The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices. In the existing loss and thermal...... models, only the electrical loadings are focused and treated as design variables, while the device rating is normally pre-defined by experience with limited design flexibility. Consequently, a more complete loss and thermal model is proposed in this paper, which takes into account not only the electrical...

  14. Loss and thermal model for power semiconductors including device rating information

    DEFF Research Database (Denmark)

    Ma, Ke; Bahman, Amir Sajjad; Beczkowski, Szymon

    2014-01-01

    impedance and silicon area of Insulated Gate Bipolar Transistor (IGBT) is mathematically established. By this new modeling approach, all factors that have impacts to the loss and thermal profiles of power devices can be accurately mapped, enabling more design freedom to optimize the efficiency and thermal......The electrical loading and device rating are both important factors that determine the loss and thermal behaviors of power semiconductor devices. In the existing loss and thermal models, only the electrical loadings are focused and treated as design variables, while the device rating is normally...... pre-defined by experience with poor design flexibility. Consequently a more complete loss and thermal model is proposed in this paper, which takes into account not only the electrical loading but also the device rating as input variables. The quantified correlation between the power loss, thermal...

  15. Design of Contact Electrodes for Semiconductor Nanowire Solar Energy Harvesting Devices.

    Science.gov (United States)

    Lin, Tzuging; Ramadurgam, Sarath; Yang, Chen

    2017-03-06

    Transparent, low-resistive contacts are critical for efficient solar energy harvesting devices. It is important to reconsider the material choices and electrode design as devices move from 2D films to 1D nanostructures. In this paper, we study the effectiveness of indium tin oxide (ITO) and metals, such as Ag and Cu, as contacts in 2D and 1D systems. Although ITO has been studied extensively and developed into an effective transparent contact for 2D devices, our results show that effectiveness does not translate to 1D systems. Particularly with consideration of resistance requirement, nanowires with metal shells as contacts enable better absorption within the semiconductor as compared to ITO. Furthermore, there is a strong dependence of contact performance on the semiconductor band gap and diameter of nanowires. We found that metal contacts outperform ITO for nanowire devices, regardless of the sheet resistance constraint, in the regime of diameters less than 100 nm and band-gaps greater than 1 eV. These metal shells optimized for best absorption are significantly thinner than ITO, which enables for the design of devices with high nanowire number density and consequently higher device efficiencies.

  16. Progress in high-efficient solution process organic photovoltaic devices fundamentals, materials, devices and fabrication

    CERN Document Server

    Li, Gang

    2015-01-01

    This book presents an important technique to process organic photovoltaic devices. The basics, materials aspects and manufacturing of photovoltaic devices with solution processing are explained. Solution processable organic solar cells - polymer or solution processable small molecules - have the potential to significantly reduce the costs for solar electricity and energy payback time due to the low material costs for the cells, low cost and fast fabrication processes (ambient, roll-to-roll), high material utilization etc. In addition, organic photovoltaics (OPV) also provides attractive properties like flexibility, colorful displays and transparency which could open new market opportunities. The material and device innovations lead to improved efficiency by 8% for organic photovoltaic solar cells, compared to 4% in 2005. Both academic and industry research have significant interest in the development of this technology. This book gives an overview of the booming technology, focusing on the solution process fo...

  17. Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography

    DEFF Research Database (Denmark)

    Yazdi, Sadegh; Kasama, Takeshi; Beleggia, Marco;

    2015-01-01

    Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron...... holography to characterize an electrically-biased Si p-. n junction by measuring its electrostatic potential, electric field and charge density distributions under working conditions. A comparison between experimental electron holographic phase images and images obtained using three-dimensional electrostatic...

  18. Optoelectronic Devices and Related Physical Phenomena in Thin Film Semiconductor Configurations.

    Science.gov (United States)

    1986-05-01

    Robinson, W. K. Marshall, J. Katz, J. S. Smith, and A. Yariv, " Monolithically Integrated Array of GaAlAs Electroabsorption Modulators," Electron... monolithic array of GaAlAs electroabsorption modulator has been demonstrated by reverse bias operation of the separate contact array. This device may be...Katz, C. Lindsey, S. Margalit, A. Yariv, "Control of Mutual Phase Locking of Monolithically Integrated Semiconductor Lasers," Appl. Phys. Lett., 43

  19. Diluted-Magenetic Semiconductor (DMS) Tunneling Devices for the Terahertz Regime

    Science.gov (United States)

    2014-12-10

    are dealing with the semiconductor GaN, which when doped with chrome becomes magnetic with a Curie temperature in excess of 900K [8]. Device Length...that are common to the cladding regions of resonant tunneling structures. Also included in the structure are heavily doped boundaries to mimic low...placed the magnetic ions in the cladding regions. In this DDE study we do not have any barriers, we are dealing with a classical structure and the

  20. Evaluation of semiconductor devices for Electric and Hybrid Vehicle (EHV) ac-drive applications, volume 1

    Science.gov (United States)

    Lee, F. C.; Chen, D. Y.; Jovanovic, M.; Hopkins, D. C.

    1985-01-01

    The results of evaluation of power semiconductor devices for electric hybrid vehicle ac drive applications are summarized. Three types of power devices are evaluated in the effort: high power bipolar or Darlington transistors, power MOSFETs, and asymmetric silicon control rectifiers (ASCR). The Bipolar transistors, including discrete device and Darlington devices, range from 100 A to 400 A and from 400 V to 900 V. These devices are currently used as key switching elements inverters for ac motor drive applications. Power MOSFETs, on the other hand, are much smaller in current rating. For the 400 V device, the current rating is limited to 25 A. For the main drive of an electric vehicle, device paralleling is normally needed to achieve practical power level. For other electric vehicle (EV) related applications such as battery charger circuit, however, MOSFET is advantageous to other devices because of drive circuit simplicity and high frequency capability. Asymmetrical SCR is basically a SCR device and needs commutation circuit for turn off. However, the device poses several advantages, i.e., low conduction drop and low cost.

  1. Gene Detection in Complex Biological Media Using Semiconductor Nanorods within an Integrated Microfluidic Device.

    Science.gov (United States)

    Bi, Xinyan; Adriani, Giulia; Xu, Yang; Chakrabortty, Sabyasachi; Pastorin, Giorgia; Ho, Han Kiat; Ang, Wee Han; Chan, Yinthai

    2015-10-20

    The salient optical properties of highly luminescent semiconductor nanocrystals render them ideal fluorophores for clinical diagnostics, therapeutics, and highly sensitive biochip applications. Microfluidic systems allow miniaturization and integration of multiple biochemical processes in a single device and do not require sophisticated diagnostic tools. Herein, we describe a microfluidic system that integrates RNA extraction, reverse transcription to cDNA, amplification and detection within one integrated device to detect histidine decarboxylase (HDC) gene directly from human white blood cells samples. When anisotropic semiconductor nanorods (NRs) were used as the fluorescent probes, the detection limit was found to be 0.4 ng of total RNA, which was much lower than that obtained using spherical quantum dots (QDs) or organic dyes. This was attributed to the large action cross-section of NRs and their high probability of target capture in a pull-down detection scheme. The combination of large scale integrated microfluidics with highly fluorescent semiconductor NRs may find widespread utility in point-of-care devices and multitarget diagnostics.

  2. Low-temperature sintering of nanoscale silver paste for semiconductor device interconnection

    Science.gov (United States)

    Bai, Guofeng

    This research has developed a lead-free semiconductor device interconnect technology by studying the processing-microstructure-property relationships of low-temperature sintering of nanoscale silver pastes. The nanoscale silver pastes have been formulated by adding organic components (dispersant, binder and thinner) into nano-silver particles. The selected organic components have the nano-particle polymeric stabilization, paste processing quality adjustment, and non-densifying diffusion retarding functions and thus help the pastes sinter to ˜80% bulk density at temperatures no more than 300°C. It has been found that the low-temperature sintered silver has better electrical, thermal and overall thermomechanical properties compared with the existing semiconductor device interconnecting materials such as solder alloys and conductive epoxies. After solving the organic burnout problems associated with the covered sintering, a lead-free semiconductor device interconnect technology has been designed to be compatible with the existing surface-mounting techniques with potentially low-cost. It has been found that the low-temperature sintered silver joints have high electrical, thermal, and mechanical performance. The reliability of the silver joints has also been studied by the 50-250°C thermal cycling experiment. Finally, the bonging strength drop of the silver joints has been suggested to be ductile fracture in the silver joints as micro-voids nucleated at microscale grain boundaries during the temperature cycling. The low-temperature silver sintering technology has enabled some benchmark packaging concepts and substantial advantages in future applications.

  3. The 1.7 kilogram microchip: energy and material use in the production of semiconductor devices.

    Science.gov (United States)

    Williams, Eric D; Ayres, Robert U; Heller, Miriam

    2002-12-15

    The scale of environmental impacts associated with the manufacture of microchips is characterized through analysis of material and energy inputs into processes in the production chain. The total weight of secondary fossil fuel and chemical inputs to produce and use a single 2-gram 32MB DRAM chip are estimated at 1600 g and 72 g, respectively. Use of water and elemental gases (mainly N2) in the fabrication stage are 32,000 and 700 g per chip, respectively. The production chain yielding silicon wafers from quartz uses 160 times the energy required for typical silicon, indicating that purification to semiconductor grade materials is energy intensive. Due to its extremely low-entropy, organized structure, the materials intensity of a microchip is orders of magnitude higher than that of "traditional" goods. Future analysis of semiconductor and other low entropy high-tech goods needs to include the use of secondary materials, especially for purification.

  4. A review of the physics and response models for burnout of semiconductor devices

    Science.gov (United States)

    Orvis, W. J.; Khanaka, G. H.; Yee, J. H.

    1984-12-01

    Physical mechanisms that cause semiconductor devices to fail from electrical overstress--particularly, EMP-induced electrical stress--are described in light of the current literature and the authors' own research. A major concern is the cause and effects of second breakdown phenomena in p-n junction devices. Models of failure thresholds are evaluated for their inherent errors and for their ability to represent the relevant physics. Finally, the response models that relate electromagnetic stress parameters to appropriate failure-threshold parameters are discussed.

  5. Semiconductor device-based sensors for gas, chemical, and biomedical applications

    CERN Document Server

    Ren, Fan

    2011-01-01

    Sales of U.S. chemical sensors represent the largest segment of the multi-billion-dollar global sensor market, which includes instruments for chemical detection in gases and liquids, biosensors, and medical sensors. Although silicon-based devices have dominated the field, they are limited by their general inability to operate in harsh environments faced with factors such as high temperature and pressure. Exploring how and why these instruments have become a major player, Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications presents the latest research, including or

  6. Numerical simulation of shock wave phenomena in hydrodynamic model of semiconductor devices

    Institute of Scientific and Technical Information of China (English)

    XU Ning; YANG Geng

    2007-01-01

    We propose a finite element method to investigate the phenomena of shock wave and to simulate the hydrodynamic model in semiconductor devices. An introduction of this model is discussed first. Then some scaling factors and a relationship between the changing variables are discussed. And then, we use a finite element method (P1-iso-P2 element) to discrete the equations. Some boundary conditions are also discussed. Finally,a sub-micron n+-n-n+ silicon diode and Si MESFET device are simulated and the results are analyzed. Numerical results show that electronic fluids are transonic under some conditions.

  7. Underwater laser fabrication device and underwater operation method using the device

    Energy Technology Data Exchange (ETDEWEB)

    Uraki, Keiichi; Satsuta, Toshitaka; Konuma, Akira; Nakamura, Mitsuo; Konuma, Tsutomu; Matsumoto, Toshimi; Tamai, Yasumasa; Yamauchi, Hiroshi; Hayashi, Eisaku; Morinaka, Ren

    1996-04-23

    The present invention provides a device for and a method of repairing structural materials and equipments by applying surface treatment and welding while irradiating laser beams in a state where reactor water is filled in a pressure vessel of a nuclear power plant. Namely, a chamber is disposed for containing a laser torch and a laser torch-driving mechanism for changing the irradiation position of the laser torch. The chamber has one end opened to the outer circumstance. It comprises a partition wall for preventing water intruded to a portion between the opened end and the laser torch when the laser beams are not irradiated. The partition wall comprises an opening/closing mechanism, and also comprises a forwarding mechanism for approaching the laser torch to the surface of the material to be fabricated. The opened end has a mechanism in contact with the surface of the material to be fabricated for preventing intrusion of water. Further, it has a mechanism for substituting water to the air. The device for and the method of the present invention can form a surface treated portion and welded portion at high quality without involving water by irradiating laser beams to the surface of the material to be fabricated under water. Troubles and abnormal oscillation due to deposition of water on a laser optical system can be eliminated. (I.S.)

  8. Abatement of waste gases and water during the processes of semiconductor fabrication

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The purpose of this article is to examine the methodsand equipment for abating waste gases and water produced during themanufacture of semiconductor materials and devices. Threeseparating methods and equipment are presented in this article tocontrol three different groups of electronic wastes. The firstgroup includes arsine and phosphine emitted during the processes ofsemiconductor materials manufacture. The abatement procedure forthis group of pollutants consists of adding iodates, cupric andmanganese salts to a multiple shower tower (MST) structure. Thesecond group includes pollutants containing arsenic, phosphorus,HF, HCl, NO2, and SO3 emitted during the manufacture ofsemiconductor materials and devices. The abatement procedureinvolves mixing oxidants and bases in an oval column with aseparator in the middle. The third group consists of the ions ofAs, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in aflocculation-sedimentation compact device equipment. Test resultsshowed that all waste gases and water after the abatementprocedures presented in this article passed the discharge standardsset by the state Environmental Protection Administrationof china.

  9. Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

    Science.gov (United States)

    Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

    2014-02-21

    The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

  10. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Borisova, Svetlana

    2012-05-23

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  11. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Borisova, Svetlana

    2012-05-23

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  12. EDITORIAL: Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications

    Science.gov (United States)

    Goodnick, Stephen; Korkin, Anatoli; Krstic, Predrag; Mascher, Peter; Preston, John; Zaslavsky, Alex

    2010-04-01

    Electronic and photonic information technology and renewable energy alternatives, such as solar energy, fuel cells and batteries, have now reached an advanced stage in their development. Cost-effective improvements to current technological approaches have made great progress, but certain challenges remain. As feature sizes of the latest generations of electronic devices are approaching atomic dimensions, circuit speeds are now being limited by interconnect bottlenecks. This has prompted innovations such as the introduction of new materials into microelectronics manufacturing at an unprecedented rate and alternative technologies to silicon CMOS architectures. Despite the environmental impact of conventional fossil fuel consumption, the low cost of these energy sources has been a long-standing economic barrier to the development of alternative and more efficient renewable energy sources, fuel cells and batteries. In the face of mounting environmental concerns, interest in such alternative energy sources has grown. It is now widely accepted that nanotechnology offers potential solutions for securing future progress in information and energy technologies. The Canadian Semiconductor Technology Conference (CSTC) forum was established 25 years ago in Ottawa as an important symbol of the intrinsic strength of the Canadian semiconductor research and development community, and the Canadian semiconductor industry as a whole. In 2007, the 13th CSTC was held in Montreal, moving for the first time outside the national capital region. The first three meetings in the series of 'Nano and Giga Challenges in Electronics and Photonics'— NGCM2002 in Moscow, NGCM2004 in Krakow, and NGC2007 in Phoenix— were focused on interdisciplinary research from the fundamentals of materials science to the development of new system architectures. In 2009 NGC2009 and the 14th Canadian Semiconductor Technology Conference (CSTC2009) were held as a joint event, hosted by McMaster University (10

  13. Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices

    Institute of Scientific and Technical Information of China (English)

    XIONG Guang-Cheng; CHEN Yuan-Sha; CHEN Li-Ping; LIAN Gui-Jun

    2008-01-01

    Charge carrier injection is performed in Pro.TCao.aMnOa (PCMO) hetero-structure junctions, exhibiting the stability without electric fields and dramatic changes in both resistance and interface barriers, which are entirely different from behaviour of semiconductor devices. The disappearance and reversion of interface barriers suggest that the adjustable resistance switching of such hereto-structure oxide devices should associate with motion of charge carriers across interfaces. The results suggest that injected carriers should be still staying in devices and result in changes of properties, which lead to a carrier self-trapping and releasing picture in a strongly correlated electronic framework. Observations in PCMO and oxygen deficient CeO2-δ devices show that oxides as functional materials could be used in microelectronics with some novel properties, in which the interface is very important.

  14. Spin polarized state filter based on semiconductor–dielectric–iron–semiconductor multi-nanolayer device

    Energy Technology Data Exchange (ETDEWEB)

    Makarov, Vladimir I., E-mail: vmvimakarov@gmail.com [Department of Physics, University of Puerto Rico, Rio Piedras, PO Box 23343, San Juan, PR 00931-3343 (United States); Khmelinskii, Igor [Universidade do Algarve, FCT, DQF, and CIQA, 8005-139 Faro (Portugal)

    2015-04-15

    Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Presently we report spin-polarized state transport in semiconductor–dielectric–iron–semiconductor (SDIS) four-nanolayer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-nanolayer devices. The theoretical model developed earlier is extended and used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment is also performed. The model predicts an exchange spectrum comprising a series of peaks, with the spectral structure determined by several factors, discussed in the paper.

  15. Developing high mobility emissive organic semiconductors towards integrated optoelectronic devices (Conference Presentation)

    Science.gov (United States)

    Dong, Huanli; Hu, Wenping; Heeger, Alan J.

    2016-09-01

    The achievement of organic semiconductors with both high mobility and strong fluorescence emission remains a challenge. High mobility requires molecules which pack densely and periodically, while serious fluorescence quenching typically occurs when fluorescent materials begin to aggregate (aggregation-induced quenching (AIQ)). Indeed, classical materials with strong fluorescent emission always exhibit low mobility, for example, tris(8-hydroxyquinoline) aluminium (ALQ) and phenylenevinylene-based polymers with mobility only 10-6-10-5 cm2V-1s-1, and benchmark organic semiconductors with high mobility demonstrate very weak emission, for example, rubrene exhibits a quantum yield 1% in crystalline state and pentacene shows very weak fluorescence in the solid state. However, organic semiconductors with high mobility and strong fluorescence are necessary for the achievement of high efficiency organic light-emitting transistors (OLETs) and electrically pumped organic lasers. Therefore, it is necessary for developing high mobility emissive organic/polymeric semiconductors towards a fast mover for the organic optoelectronic integrated devices and circuits.

  16. Low-temperature optical processing of semiconductor devices using photon effects

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.L.; Cudzinovic, M.; Symko, M. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1995-08-01

    In an RTA process the primary purpose of the optical energy incident on the semiconductor sample is to increase its temperature rapidly. The activation of reactions involved in processes such as the formation of junctions, metal contacts, deposition of oxides or nitrides, takes place purely by the temperature effects. We describe the observation of a number of new photonic effects that take place within the bulk and at the interfaces of a semiconductor when a semiconductor device is illuminated with a spectrally broad-band light. Such effects include changes in the diffusion properties of impurities in the semiconductor, increased diffusivity of impurities across interfaces, and generation of electric fields that can alter physical and chemical properties of the interface. These phenomena lead to certain unique effects in an RTA process that do not occur during conventional furnace annealing under the same temperature conditions. Of particular interest are observations of low-temperature alloying of Si-Al interfaces, enhanced activation of phosphorus in Si during drive-in, low-temperature oxidation of Si, and gettering of impurities at low-temperatures under optical illumination. These optically induced effects, in general, diminish with an increase in the temperature, thus allowing thermally activated reaction rates to dominate at higher temperatures.

  17. Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices

    OpenAIRE

    2015-01-01

    Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [−12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is deposited on the m-plane ZnO thin films. It is interesting to observe the near-infrared random lasin...

  18. Highly entangled photons from hybrid piezoelectric-semiconductor quantum dot devices.

    Science.gov (United States)

    Trotta, Rinaldo; Wildmann, Johannes S; Zallo, Eugenio; Schmidt, Oliver G; Rastelli, Armando

    2014-06-11

    Entanglement resources are key ingredients of future quantum technologies. If they could be efficiently integrated into a semiconductor platform, a new generation of devices could be envisioned, whose quantum-mechanical functionalities are controlled via the mature semiconductor technology. Epitaxial quantum dots (QDs) embedded in diodes would embody such ideal quantum devices, but a fine-structure splitting (FSS) between the bright exciton states lowers dramatically the degree of entanglement of the sources and hampers severely their real exploitation in the foreseen applications. In this work, we overcome this hurdle using strain-tunable optoelectronic devices, where any QD can be tuned for the emission of photon pairs featuring the highest degree of entanglement ever reported for QDs, with concurrence as high as 0.75 ± 0.02. Furthermore, we study the evolution of Bell's parameters as a function of FSS and demonstrate for the first time that filtering-free violation of Bell's inequalities requires the FSS to be smaller than 1 μeV. This upper limit for the FSS also sets the tuning range of exciton energies (∼1 meV) over which our device operates as an energy-tunable source of highly entangled photons. A moderate temporal filtering further increases the concurrence and the tunability of exciton energies up to 0.82 and 2 meV, respectively, though at the expense of 60% reduction of count rate.

  19. Fabrication of p-type ZnO nanofibers by electrospinning for field-effect and rectifying devices

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Shuai; Liu, Shu-Liang; Liu, Ling-Zhi; Liu, Yi-Chen [College of Physics, Qingdao University, Qingdao 266071 (China); Long, Yun-Ze, E-mail: yunze.long@163.com [College of Physics, Qingdao University, Qingdao 266071 (China); Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), Qingdao 266071 (China); State Key Laboratory Cultivation Base of New Fiber Materials and Modern Textile, Qingdao University, Qingdao 266071 (China); Collaborative Innovation Center for Marine Biomass Fibers, Materials and Textiles of Shandong Province, Qingdao 266071 (China); Zhang, Hong-Di; Zhang, Jun-Cheng; Han, Wen-Peng [College of Physics, Qingdao University, Qingdao 266071 (China); Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), Qingdao 266071 (China)

    2014-01-27

    Ce-doped p-type ZnO nanofibers were synthesized by electrospinning and followed calcinations. The surface morphology, elementary composition, and crystal structure of the nanofibers were investigated. The field effect curve confirms that the resultant Ce-doped ZnO nanofibers are p-type semiconductor. A p-n heterojunction device consisting of Ce-doped p-type ZnO nanofibers and n-type indium tin oxide (ITO) thin film was fabricated on a piece of quartz substrate. The current-voltage (I-V) characteristic of the p-n heterojunction device shows typical rectifying diode behavior. The turn-on voltage appears at about 7 V under the forward bias and the reverse current is impassable.

  20. Modeling of semiconductor devices for high-speed all-optical signal processing

    DEFF Research Database (Denmark)

    Bischoff, Svend; Højfeldt, Sune; Mørk, Jesper

    2001-01-01

    The all-optical signal processing performance of devices based on active semiconductor waveguides is investigated. A large signal model is used to analyse the physical mechanisms limiting the high-speed performance of both semiconductor optical amplifiers (SOAs) and electro-absorption modulators...... (EAMs). Wavelength conversion and signal regeneration in EAMs is discussed at 10 and 40 Gbit/s. The finite carrier sweep-out time is shown to limit the EAM performance. Four-wave mixing (FWM) in SOAs is almost instantaneous. However, with increasing bit rates and advanced processing functionalities some...... limitations arise. These limitations are elucidated by studying bi-directional simultaneous clear and drop (de-multiplexing) for a 4x40 Gbit/s signal. The simultaneous clearing and de-multiplexing (drop) of an optical time division multiplexing signal channel for an 8x40 Gbit/s signal is investigated...

  1. Aligned carbon nanotubes physics, concepts, fabrication and devices

    CERN Document Server

    Ren, Zhifeng; Wang, Yang

    2012-01-01

    This book surveys the physics and fabrication of carbon nanotubes and their applications in optics, electronics, chemistry and biotechnology. The text illustrates major fabrication methods in detail, particularly the most widely used PECVD growth techniques.

  2. Simple 3D Printed Scaffold-Removal Method for the Fabrication of Intricate Microfl uidic Devices

    NARCIS (Netherlands)

    Saggiomo, V.; Velders, A.H.

    2015-01-01

    An easy and cheap fabrication method for intricate polydimethylsiloxane microfluidic devices is presented. The acrylonitrile butadiene styrene scaffold-removal method uses cheap, off-the-shelf materials and equipment for the fabrication of intricate microfluidic devices. The versatility of the metho

  3. Carbon material based microelectromechanical system (MEMS): Fabrication and devices

    Science.gov (United States)

    Xu, Wenjun

    silicon and metal based microsystems. In this thesis, this mature technique was exploited to generate a variety of microelectrode structures to facilitate the micropatterning and manipulation of the CNTs. Selective deposition of electrically charged CNTs onto desired locations was realized in an EPD process through patterning of electric field lines created by the microelectrodes fabricated through MEMS techniques. A variety of 2-D and 3-D micropatterns of CNTs with waferscale areas have been successfully achieved in both rigid and elastic systems. The thickness and morphology of the generated CNT patterns was found to be readily controllable through the parameters of the fabrication process. Studies also showed that for this technique, high surface hydrophobicity of the non-conductive regions in microstructures was critical to accomplish well-defined selective micropatterning of CNTs. Upon clearing the hurdles of the CNT manipulation, a patterned PDMS/CNT nanocomposite was fabricated through the aforementioned approach and was incorporated, investigated and validated in elastic force/strain microsensors. The gauge factor of the sensor exhibited a strong dependence on both the initial resistance of the device and the applied strain. Detailed analysis of the data suggests that the piezoresistive effect of this specially constructed bi-layer composite could be due to three mechanisms, and the sensing mechanism may vary when physical properties of the CNT network embedded in the polymer matrix alter. The feasibility of the PDSM/CNT composite being utilized as an elastic electret was further explored. The nanocomposite composed of these two non-traditional electret materials exhibited electret characteristics with reasonable charge storage stability when charged using a corona discharge. The power generation capacity of the corona-charged composite has been characterized and successfully demonstrated in both a ball drop experiment and cyclic mechanical load experiments

  4. H+-type and OH- -type biological protonic semiconductors and complementary devices.

    Science.gov (United States)

    Deng, Yingxin; Josberger, Erik; Jin, Jungho; Roudsari, Anita Fadavi; Rousdari, Anita Fadavi; Helms, Brett A; Zhong, Chao; Anantram, M P; Rolandi, Marco

    2013-10-03

    Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H(+) hop along chains of hydrogen bonds between water molecules and hydrophilic residues - proton wires. These wires also support the transport of OH(-) as proton holes. Discriminating between H(+) and OH(-) transport has been elusive. Here, H(+) and OH(-) transport is achieved in polysaccharide- based proton wires and devices. A H(+)- OH(-) junction with rectifying behaviour and H(+)-type and OH(-)-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H(+) and OH(-) to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems.

  5. Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

    Science.gov (United States)

    Oulachgar, El Hassane

    As the semiconductors industry is moving toward nanodevices, there is growing need to develop new materials and thin films deposition processes which could enable strict control of the atomic composition and structure of thin film materials in order to achieve precise control on their electrical and optical properties. The accurate control of thin film characteristics will become increasingly important as the miniaturization of semiconductor devices continue. There is no doubt that chemical synthesis of new materials and their self assembly will play a major role in the design and fabrication of next generation semiconductor devices. The objective of this work is to investigate the chemical vapor deposition (CVD) process of thin film using a polymeric precursor as a source material. This process offers many advantages including low deposition cost, hazard free working environment, and most importantly the ability to customize the polymer source material through polymer synthesis and polymer functionalization. The combination between polymer synthesis and CVD process will enable the design of new generation of complex thin film materials with a wide range of improved chemical, mechanical, electrical and optical properties which cannot be easily achieved through conventional CVD processes based on gases and small molecule precursors. In this thesis we mainly focused on polysilanes polymers and more specifically poly(dimethylsilanes). The interest in these polymers is motivated by their distinctive electronic and photonic properties which are attributed to the delocalization of the sigma-electron along the Si-Si backbone chain. These characteristics make polysilane polymers very promising in a broad range of applications as a dielectric, a semiconductor and a conductor. The polymer-based CVD process could be eventually extended to other polymer source materials such as polygermanes, as well as and a variety of other inorganic and hybrid organic-inorganic polymers

  6. Device Fabrication of 60 μm Resonant Cavity Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    J. J. C. Reyes

    2004-12-01

    Full Text Available An array of 60-mm-diameter resonant cavity light-emitting diodes suited for coupling with fiber opticwere fabricated using standard device fabrication technique. I-V characterization was used to determinethe viability of the device fabricating process. Under forward bias, the turn-on voltage of the devices is1.95–2.45 V with a series resistance of 17–14 kW. Under reverse bias, the devices showed a breakdownvoltage of 35 V.

  7. Radiation effects on semiconductor devices in high energy heavy ion accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Belousov, Anton

    2014-10-20

    Radiation effects on semiconductor devices in GSI Helmholtz Center for Heavy Ion Research are becoming more and more significant with the increase of beam intensity due to upgrades. Moreover a new accelerator is being constructed on the basis of GSI within the project of facility for antiproton and ion research (FAIR). Beam intensities will be increased by factor of 100 and energies by factor of 10. Radiation fields in the vicinity of beam lines will increase more than 2 orders of magnitude and so will the effects on semiconductor devices. It is necessary to carry out a study of radiation effects on semiconductor devices considering specific properties of radiation typical for high energy heavy ion accelerators. Radiation effects on electronics in accelerator environment may be divided into two categories: short-term temporary effects and long-term permanent degradation. Both may become critical for proper operation of some electronic devices. This study is focused on radiation damage to CCD cameras in radiation environment of heavy ion accelerator. Series of experiments with irradiation of devices under test (DUTs) by secondary particles produced during ion beam losses were done for this study. Monte Carlo calculations were performed to simulate the experiment conditions and conditions expected in future accelerator. Corresponding comparisons and conclusions were done. Another device typical for accelerator facilities - industrial Ethernet switch was tested in similar conditions during this study. Series of direct irradiations of CCD and MOS transistors with heavy ion beams were done as well. Typical energies of the primary ion beams were 0.5-1 GeV/u. Ion species: from Na to U. Intensities of the beam up to 10{sup 9} ions/spill with spill length of 200-300 ns. Criteria of reliability and lifetime of DUTs in specific radiation conditions were formulated, basing on experimental results of the study. Predictions of electronic device reliability and lifetime were

  8. SEMICONDUCTOR DEVICES A compressed wide period-tunable grating working at low voltage

    Science.gov (United States)

    Xiang, Liu; Tie, Li; Anjie, Ming; Yuelin, Wang

    2010-10-01

    A MEMS compressed period-tunable grating device with a wide tuning range has been designed, fabricated and characterized. To increase the tuning range, avoid instability with tuning and improve the performance, we propose in this paper a period-tunable grating which is compressed by large-displacement comb actuators with tilted folded beams. The experimental results show that the designed grating device has a compression range of up to 144 μm within 37 V driving voltage. The period of the grating can be adjusted continuously from 16 to 14 μm with a tuning range of 12.5%. The maximum tuning range of the first-order diffraction angle is 0.34° at 632.8 nm and the reflectivity of the grating is more than 92.6% in the mid-infrared region. The grating device can be fabricated by simple processes and finds applications in mid-infrared spectrometers.

  9. Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth.

    Science.gov (United States)

    Song, Ji-Min; Lee, Jang-Sik

    2016-01-07

    Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switching memory devices were fabricated with nano-template-assisted bottom up growth. The electrochemical deposition was adopted to achieve the bottom-up growth of nickel nanodot electrodes. Nickel oxide layer was formed by oxygen plasma treatment of nickel nanodots at low temperature. The structures of fabricated nanoscale memory devices were analyzed with scanning electron microscope and atomic force microscope (AFM). The electrical characteristics of the devices were directly measured using conductive AFM. This work demonstrates the fabrication of resistive switching memory devices using self-assembled nanoscale masks and nanomateirals growth from bottom-up electrochemical deposition.

  10. Micro and nanophotonics for semiconductor infrared detectors towards an ultimate uncooled device

    CERN Document Server

    Jakšic, Zoran

    2014-01-01

    The advent of microelectromechanic system (MEMS) technologies and nanotechnologies has resulted in a multitude of structures and devices with ultra compact dimensions and with vastly enhanced or even completely novel properties. In the field of photonics it resulted in the appearance of new paradigms, including photonic crystals that exhibit photonic bandgap and represent an optical analog of semiconductors and metamaterials that have subwavelength features and may have almost arbitrary values of effective refractive index, including those below zero. In addition to that, a whole new field of

  11. Evaluation of dosimetric parameters of a commercial semiconductor device in computed tomography

    Energy Technology Data Exchange (ETDEWEB)

    Magalhaes, C. M. S.; Sobrinho, M. C.; Souza, D. N. [Departmento de Fisica, Universidade Federale de Sergipe, Av. Marechal Rondon s/n, 49.100-000, Rosa Elze, Sao Cristovao-SE (Brazil); Santos, L. A. P. [Laboratorio de Instrumentacao Nuclear, Centro Regional de Ciencias Nucleares, Av. Professor Luiz Freire, 200, 50.740-540 Recife-PE (Brazil)

    2009-10-15

    Semiconductor devices have been widely used for dosimetry in radiotherapy and more recently in diagnostic radiology. In order to evaluate the performance of a phototransistor as a radiation detector in computed tomography (CT), some dosimetric parameters were evaluated, such as: repetitive, angular dependence, response for different tube potentials, dose and dose rate dependence. The irradiation was performed with the detector on the axis of rotation of a X-ray tube in CT scanner. The results showed that, making the necessary corrections, it is possible to use the phototransistor for dosimetry in tomography. (Author)

  12. Electron beam effects in the analysis of compound semiconductors and devices

    Energy Technology Data Exchange (ETDEWEB)

    Kazmerski, L.L.; Burnham, N.A.; Swartzlander, A.B.; Nelson, A.J.; Asher, S.E.

    1987-09-01

    The effects of electron beams on the analysis of CuInSe/sub 2/ surfaces are examined in this paper. Potential changes in the surface chemistry: including oxidation and desorption: under a range of incident probe conditions, are investigated for possible artifactual information generation. Emphasis is placed on the relationships between beam conditions and oxygen chemisorption and physisorption, since oxygen treatments of devices utilizing this semiconductor are critical to performance. Single crystals and polycrystalline thin films are analyzed and compared to establish the beam-induced phenomena.

  13. 22nd RD50 Workshop on Radiation Hard Semiconductor Devices for High Luminosity Colliders

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, Sally [Univ. of New Mexico, Albuquerque, NM (United States)

    2013-05-06

    The 22nd RD50 Workshop on Radiation Hard Semiconductor Devices for High Luminosity Colliders was held on the campus of the University of New Mexico from June 3 to 5, 2013. This was the first North American meeting of the series going back to 2001. The sessions covered Material and Defect Characterization, Detector Characterization, Full Detector Systems, and New Structures. A half-day mini-workshop was allocated to radiation damage at LHC experiments. All talks are archived permanently available to the public at rd50.web.cern.ch. Financial support was used for room rental audiovisual equipment rental, and document preparation services.

  14. Non-Parabolic Hydrodynamic Formulations for the Simulation of Inhomogeneous Semiconductor Devices

    Science.gov (United States)

    Smith, A. W.; Brennan, K. F.

    1996-01-01

    Hydrodynamic models are becoming prevalent design tools for small scale devices and other devices in which high energy effects can dominate transport. Most current hydrodynamic models use a parabolic band approximation to obtain fairly simple conservation equations. Interest in accounting for band structure effects in hydrodynamic device simulation has begun to grow since parabolic models cannot fully describe the transport in state of the art devices due to the distribution populating non-parabolic states within the band. This paper presents two different non-parabolic formulations or the hydrodynamic model suitable for the simulation of inhomogeneous semiconductor devices. The first formulation uses the Kane dispersion relationship ((hk)(exp 2)/2m = W(1 + alphaW). The second formulation makes use of a power law ((hk)(exp 2)/2m = xW(exp y)) for the dispersion relation. Hydrodynamic models which use the first formulation rely on the binomial expansion to obtain moment equations with closed form coefficients. This limits the energy range over which the model is valid. The power law formulation readily produces closed form coefficients similar to those obtained using the parabolic band approximation. However, the fitting parameters (x,y) are only valid over a limited energy range. The physical significance of the band non-parabolicity is discussed as well as the advantages/disadvantages and approximations of the two non-parabolic models. A companion paper describes device simulations based on the three dispersion relationships; parabolic, Kane dispersion and power law dispersion.

  15. Non-Parabolic Hydrodynamic Formulations for the Simulation of Inhomogeneous Semiconductor Devices

    Science.gov (United States)

    Smith, A. W.; Brennan, K. F.

    1996-01-01

    Hydrodynamic models are becoming prevalent design tools for small scale devices and other devices in which high energy effects can dominate transport. Most current hydrodynamic models use a parabolic band approximation to obtain fairly simple conservation equations. Interest in accounting for band structure effects in hydrodynamic device simulation has begun to grow since parabolic models cannot fully describe the transport in state of the art devices due to the distribution populating non-parabolic states within the band. This paper presents two different non-parabolic formulations or the hydrodynamic model suitable for the simulation of inhomogeneous semiconductor devices. The first formulation uses the Kane dispersion relationship ((hk)(exp 2)/2m = W(1 + alphaW). The second formulation makes use of a power law ((hk)(exp 2)/2m = xW(exp y)) for the dispersion relation. Hydrodynamic models which use the first formulation rely on the binomial expansion to obtain moment equations with closed form coefficients. This limits the energy range over which the model is valid. The power law formulation readily produces closed form coefficients similar to those obtained using the parabolic band approximation. However, the fitting parameters (x,y) are only valid over a limited energy range. The physical significance of the band non-parabolicity is discussed as well as the advantages/disadvantages and approximations of the two non-parabolic models. A companion paper describes device simulations based on the three dispersion relationships; parabolic, Kane dispersion and power law dispersion.

  16. Device reliability challenges for modern semiconductor circuit design – a review

    Directory of Open Access Journals (Sweden)

    C. Schlünder

    2009-05-01

    Full Text Available Product development based on highly integrated semiconductor circuits faces various challenges. To ensure the function of circuits the electrical parameters of every device must be in a specific window. This window is restricted by competing mechanisms like process variations and device degradation (Fig. 1. Degradation mechanisms like Negative Bias Temperature Instability (NBTI or Hot Carrier Injection (HCI lead to parameter drifts during operation adding on top of the process variations.

    The safety margin between real lifetime of MOSFETs and product lifetime requirements decreases at advanced technologies. The assignment of tasks to ensure the product lifetime has to be changed for the future. Up to now technology development has the main responsibility to adjust the technology processes to achieve the required lifetime. In future, reliability can no longer be the task of technology development only. Device degradation becomes a collective challenge for semiconductor technologist, reliability experts and circuit designers. Reliability issues have to be considered in design as well to achieve reliable and competitive products. For this work, designers require support by smart software tools with built-in reliability know how. Design for reliability will be one of the key requirements for modern product designs.

    An overview will be given of the physical device damage mechanisms, the operation conditions within circuits leading to stress and the impact of the corresponding device parameter degradation on the function of the circuit. Based on this understanding various approaches for Design for Reliability (DfR will be described. The function of aging simulators will be explained and the flow of circuit-simulation will be described. Furthermore, the difference between full custom and semi custom design and therefore, the different required approaches will be discussed.

  17. Nanolithography the art of fabricating nanoelectronic and nanophotonic devices and systems

    CERN Document Server

    2014-01-01

    Lithography is the process of patterning and etching to create integrated circuits and other devices on semiconductor wafers. Photolithography cannot be scaled down much further so in order to cope with the future reduction in size of semiconductor chips to nanoscale dimensions, scientists have turned to alternative nanolithography technologies. In addition to scaling issues, the increasing integration of multiple functions within a single device poses further challenges which drive innovations in nanolithography and nanofabrication. Chapters cover lithographic techniques, including optical projection, extreme ultraviolet (EUV), nanoimprint, electron beam and ion beam lithography, and applications of nanolithography in nanoelectronics, nanophotonics and microfluidics.

  18. Present and Future of Semiconductor Pulsed Power Generator ˜Role of Power Semiconductor Devices in Plasma Research˜ 6.High-Speed, Large-Current Power Semiconductors for Pulse Power Generation

    Science.gov (United States)

    Takata, Ikunori

    This paper describes the operation principles and limits of power semiconductors. In addition, operation mechanisms of the new pulse power devices, SOS (Semiconductor Opening Switch) and dynistors, are explained qualitatively. The fastest operating power device is the series connection of comparatively low-voltage devices. For large-current operation, a uniformly operating pin-diode structure device is essential. An SOS is constructed from dozens of medium voltage (about 3kV) special hard-recovery diodes. This can shut off 2kA current at 10kV with in 10ns. The dynistor has n+pnp+ four layers and two electrodes. Serial-connected dynistors have the potential to replace thyratrons. These new devices can endure over 10 kA/cm2 at much higher voltage than their static breakdown values in the repetitive use more than 1011 times.

  19. Error analysis of the semi-discrete local discontinuous Galerkin method for semiconductor device simulation models

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    In this paper we continue our effort in Liu-Shu (2004) and Liu-Shu (2007) for developing local discontinuous Galerkin (LDG) finite element methods to discretize moment models in semiconductor device simulations. We consider drift-diffusion (DD) and high-field (HF) models of one-dimensional devices, which involve not only first derivative convection terms but also second derivative diffusion terms, as well as a coupled Poisson potential equation. Error estimates are obtained for both models with smooth solutions. The main technical difficulties in the analysis include the treatment of the inter-element jump terms which arise from the discontinuous nature of the numerical method, the nonlinearity, and the coupling of the models. A simulation is also performed to validate the analysis.

  20. Quantitative electron holographic tomography for the 3D characterisation of semiconductor device structures

    Energy Technology Data Exchange (ETDEWEB)

    Twitchett-Harrison, Alison C. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)], E-mail: a.harrison@imperial.ac.uk; Yates, Timothy J.V.; Dunin-Borkowski, Rafal E.; Midgley, Paul A. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

    2008-10-15

    Electron tomography and electron holography experiments have been combined to investigate the 3D electrostatic potential distribution in semiconductor devices. The experimental procedure for the acquisition and data reconstruction of holographic tilt series of silicon p-n junction specimens is described. A quantitative analysis of the experimental results from specimens of two different thicknesses is presented, revealing the 3D electrostatic potential variations arising from the presence of surfaces and damage generated by focused ion beam (FIB) sample preparation. Close to bulk-like properties are measured in the centre of the tomographic reconstruction of the specimen, revealing higher electrically active dopant concentrations compared to the measurements obtained at the specimen surfaces. A comparison of the experimental results from the different thickness specimens has revealed a 'critical' thickness for this specimen preparation method of 350 nm that is required for this device structure to retain 'bulk'-like properties in the centre of the membrane.

  1. Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Yazdi, Sadegh, E-mail: sadegh.yazdi@cen.dtu.dk [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); Center for Electron Nanoscopy, Technical University of Denmark, DK 2800 Lyngby (Denmark); Kasama, Takeshi; Beleggia, Marco; Samaie Yekta, Maryam [Center for Electron Nanoscopy, Technical University of Denmark, DK 2800 Lyngby (Denmark); McComb, David W. [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); Department of Materials Science and Engineering, The Ohio State University, Columbus, OH 43210 (United States); Twitchett-Harrison, Alison C. [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); Dunin-Borkowski, Rafal E. [Center for Electron Nanoscopy, Technical University of Denmark, DK 2800 Lyngby (Denmark); Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 Jülich (Germany)

    2015-05-15

    Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron holography to characterize an electrically-biased Si p–n junction by measuring its electrostatic potential, electric field and charge density distributions under working conditions. A comparison between experimental electron holographic phase images and images obtained using three-dimensional electrostatic potential simulations highlights several remaining challenges to quantitative analysis. Our results illustrate how the determination of reliable potential distributions from phase images of electrically biased devices requires electrostatic fringing fields, surface charges, specimen preparation damage and the effects of limited spatial resolution to be taken into account.

  2. Inclusion of degeneracy in the analysis of heavily doped regions in silicon solar cells and other semiconductor devices

    Science.gov (United States)

    Shibib, M. A.

    1981-02-01

    A simple analytic approximation of Fermi-Dirac integrals of order 1/2 is presented and is used to derive an expression for the square of the effective intrinsic carrier concentration (n sub ie squared) in a semiconductor with energy band gap narrowing and degeneracy of the charge carriers. This expression is useful in the analysis of solar cells and of other semiconductor devices containing regions of heavy doping concentration.

  3. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Vittone, E., E-mail: ettore.vittone@unito.it [Department of Physics, NIS Research Centre and CNISM, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Pastuovic, Z. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Breese, M.B.H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Garcia Lopez, J. [Centro Nacional de Aceleradores (CNA), Sevilla University, J. Andalucia, CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jaksic, M. [Department for Experimental Physics, Ruder Boškovic Institute (RBI), P.O. Box 180, 10002 Zagreb (Croatia); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland); Siegele, R. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Simon, A. [International Atomic Energy Agency (IAEA), Vienna International Centre, P.O. Box 100, 1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary); Vizkelethy, G. [Sandia National Laboratories (SNL), PO Box 5800, Albuquerque, NM (United States)

    2016-04-01

    Highlights: • We study the electronic degradation of semiconductors induced by ion irradiation. • The experimental protocol is based on MeV ion microbeam irradiation. • The radiation induced damage is measured by IBIC. • The general model fits the experimental data in the low level damage regime. • Key parameters relevant to the intrinsic radiation hardness are extracted. - Abstract: This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

  4. Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

    Science.gov (United States)

    Acharyya, Aritra; Banerjee, J. P.

    2014-01-01

    In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

  5. Superlattice of stress domains in nanometer-size semiconductor devices predicted from atomistic simulations

    Science.gov (United States)

    Bachlechner, Martina E.; Ebbsjö, Ingvar; Kalia, Rajiv K.; Kodiyalam, Sanjay; Madhukar, Anupam; Nakano, Aiichiro; Omeltchenko, Andrey; Walsh, Phillip; Vashishta, Priya

    2001-03-01

    Semiconductor industry association estimates pixel sizes in next generation devices to be on the order of 70 nm by the year of 2008. Although recent measurements of local strain distributions2 and strain relaxation in nano wires have reached 100-nm spatial resolution, experimental tools for determining stresses for sub 100 nm, feature sizes are still to be developed4. On the other hand, recent developments in efficient simulation algorithms on state-of-the-art parallel computers5 enable us to gain valuable information on interface structure and atomic level stresses in nanopixels of < 100 nm size. Here, we present results for a 27.5-million atom molecular-dynamics simulations of a 70 nm x 70 nm crystalline silicon nanopixel covered with amorphous silicon nitride and placed on a 140 nm x 140 nm crystalline silicon substrate. The stresses parallel to the silicon/silicon nitride interface exhibit a hexagonal superlattice of stress domains with a lattice constant of 12.8 (±1.8) nm. From our analysis of the 70 nm x 70 nm pixel and on comparing with a smaller 25 nm x 25 nm nanopixel, we conclude that for square pixels the superlattice constant is independent of the pixel size and is entirely determined by the mismatch between silicon and silicon nitride. Such stress inhomogeneity with values of up to ±2 GPa will have a significant impact on the performance of semiconductor devices with sub 100 nm features.

  6. SEMICONDUCTOR DEVICES: Total ionizing dose effects and annealing behavior for domestic VDMOS devices

    Science.gov (United States)

    Bo, Gao; Xuefeng, Yu; Diyuan, Ren; Gang, Liu; Yiyuan, Wang; Jing, Sun; Jiangwei, Cui

    2010-04-01

    Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown voltage, leakage current, and on-state resistance upon total dose were discussed. We also observed the relationships between these parameters and annealing time. The experiment results show that: the threshold voltage negatively shifts with the increasing of total dose and continues to decrease at the beginning of 100 °C annealing; the breakdown voltage under the drain bias voltage has passed through the pre-irradiation threshold voltage during annealing behaving with a “rebound" effect; there is a latent interface-trap buildup (LITB) phenomenon in the VDMOS devices; the leakage current is suppressed; and on-state resistance is almost kept constant during irradiation and annealing. Our experiment results are meaningful and important for further improvements in the design and processing.

  7. Fundamentals and practice of metal contacts to wide band gap semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Borysiewicz, M.A.; Kaminska, E.; Mysliwiec, M.; Wzorek, M.; Piotrowska, A. [Institute of Electron Technology, Warsaw (Poland); Kuchuk, A. [Institute of Electron Technology, Warsaw (Poland); V.E. Lashkaryov Institute of Semiconductor Physics, Kyiv (Ukraine); Barcz, A.; Dynowska, E. [Institute of Electron Technology, Warsaw (Poland); Institute of Physic PAS, Warsaw (Poland); Di Forte-Poisson, M.A. [Alcatel-Thales III-V Lab, Marcoussis (France); Giesen, C. [AIXTRON SE, Herzogenrath (Germany)

    2012-03-15

    Presented are the theoretical and experimental fundamentals of the fabrication of ohmic contacts to n- and p-type wide band gap semiconductors such as SiC and GaN. In particular, the Ni-Si/n-SiC, Al-Ti/p-SiC, Ti-Al/n-GaN and Ni-Au/p-GaN systems are discussed with the focus on the thermally activated chemical reactions taking place at the metal-semiconductor interface, that lead to the appearance of ohmic behaviour in the contact. Examples of reactions at very intimate interfaces are shown, which are irresolvable using even such sophisticated characterisation methods as high-resolution transmission electron microscopy and can only be explained using modelling. The issue of thermal stability of the contacts is discussed and the introduction of specifically designed diffusion barriers (eg. Ta-Si-N) into the contact metallisation stack is presented as a solution improving drastically the thermal stability of the contacts without degrading their electrical properties. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

    Science.gov (United States)

    Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

    1994-01-01

    Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

  9. Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

    Science.gov (United States)

    Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

    1994-10-18

    Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

  10. Use of Vacuum Bagging for Fabricating Thermoplastic Microfluidic Devices

    Science.gov (United States)

    Cassano, Christopher L.; Simon, Andrew J.; Liu, Wei; Fredrickson, Carl; Fan, Z. Hugh

    2014-01-01

    In this work we present a novel thermal bonding method for thermoplastic microfluidic devices. This simple method employs a modified vacuum bagging technique, a concept borrowed from the aerospace industry, to produce conventional thick substrate microfluidic devices, as well as multi-layer film devices. The bonds produced using this method are superior to those obtained using conventional thermal bonding methods, including thermal lamination, and are capable of sustaining burst pressures in excess of 550 kPa. To illustrate the utility of this method, thick substrate devices were produced, as well as a six-layer film device that incorporated several complex features. PMID:25329244

  11. Simulation and Modeling of Submicron Semiconductor Devices by a New Hydrodynamic Method.

    Science.gov (United States)

    Lin, Qi.

    Robust numerical methods for the solution of the hydrodynamic model are developed and implemented for the simulation of submicron semiconductor devices. The hydrodynamic equations are reformulated into readily solvable self-adjoint forms with the aid of newly defined HD-Slotboom state variables. A new discretization strategy is developed to resolve the rapid variation in the carrier densities and carrier temperatures. The approach also yields a coefficient matrix for each discretized hydrodynamic equation, which is guaranteed to be diagonally dominant. The hydrodynamic equations are decoupled by using a Gummel block iteration method. A fixed-point iteration technique is employed to solve the discretized equations, which guarantees that each decoupled equation converges for any starting value. Furthermore, the decoupling of equations and use of the fixed-point iteration scheme obviate the need for direct solutions of large matrix equations, and thereby eliminate the need for large memory allocations. The algorithm is inherently parallel, so it can be readily implemented on parallel machines to increase computation speed. Using these methods, several simulation packages are developed for the analysis of one-dimensional (1-D) n^+-n-n^+ devices, and square electric fields, two-dimensional (2-D) & three-dimensional (3-D) MOSFET's, and two-dimensional SOI MOSFET's. Various simulation results for these devices are presented. Some one-dimensional simulation results are compared with Monte Carlo calculations, and a good agreement is observed. Also convergence, stability, and efficiency of the methods are examined by a set of numerical experiments. The device simulators are applied to investigate the hot-electron induced degradation in submicron SOI devices and EPROM's. The impact of localized interface charge on device characteristics is studied. Some measured results are used to calibrate the process parameters in the simulators so that the simulators can predict device

  12. Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

    Science.gov (United States)

    Sargentis, Ch.; Giannakopoulos, K.; Travlos, A.; Tsamakis, D.

    2007-04-01

    Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO 2 layer and are then fully covered by a HfO 2 layer. The HfO 2 is a high- k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance-voltage and conductance-voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.

  13. The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

    Science.gov (United States)

    Chantis, Athanasios

    2009-03-01

    I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

  14. Theory of potential distributions in abrupt heterojunction crystalline semiconductor devices: Treatment of Schottky barriers and rectifiers

    Science.gov (United States)

    Mohammad, S. Noor

    1988-03-01

    A theoretical method for potential distribution in abrupt heterojunctions (HJs) made of uniformly doped degenerate semiconductors has been developed. The method reduces automatically to that in HJs from nondegenerate semiconductors in the limits of low carrier concentrations. For the development of the method the rigid band approximation of degenerate semiconductors has been considered to be valid. The transport equations of Marshak and Van Vliet [Solid-State Electron. 21, 417 (1978)] and an analytical approximation for the Fermi-Dirac integral of order half by the present author [Solid-State Electron. 30, 713 (1987)] have been employed for the formulation. The average of the scattered experimental data for band-gap narrowing of n-Si, n-Ge, p-GaAs, and n-InP have been fitted to the same form as that for the Fermi-Dirac integral of order 1/2 to ease this formulation. Local electrostatic field and local electrostatic potentials obtained from the formulation reduce to those of Chatterjee and Marshak [Solid-State Electron. 24, 1111 (1981)], Cserveny [Int. J. Electron. 25, 65 (1968)], and Kroemer [J. Appl. Phys. 52, 873 (1981)] under special conditions. It is noted that band-gap narrowing and consideration of Fermi-Dirac statistics represent opposite effects for effective intrinsic carrier concentration and local electrostatic field. At some critical concentration belonging to the degenerate limit of a semiconductor, these two effects cancel the influence of each other on effective intrinsic carrier concentration of the semiconductor and on transition region properties of an HJ. Below this critical concentration, band-gap narrowing rather than a consideration of Fermi-Dirac statistics dominantly influences the device properties. However, above this critical concentration, consideration of Fermi-Dirac statistics dominates over the other. Applications of electrostatic field and electrostatic potential to isotype and anisotype HJs have been discussed. On the basis of

  15. SEMICONDUCTOR DEVICES: Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices

    Science.gov (United States)

    Shifeng, Zhang; Koubao, Ding; Yan, Han; Chenggong, Han; Jiaxian, Hu; Bin, Zhang

    2010-09-01

    Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented. A constant current pulse stressing test is applied to the device. Two different degradation mechanisms are identified by analysis of electrical data, technology computer-aided design (TCAD) simulations and charge pumping measurements. The first mechanism is attributed to positive oxide-trapped charges in the N-type drift region, and the second one is due to decreased electron mobility upon interface state formation in the drift region. Both of the mechanisms are enhanced with increasing avalanche breakdown current.

  16. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul, E-mail: masiulelt@gmail.com; Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P. [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India); Mukherjee, Rabibrata [Department of Chemical Engineering, Indian Institute of Technology, Kharagpur 721302 (India)

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  17. Lattice matched semiconductor growth on crystalline metallic substrates

    Science.gov (United States)

    Norman, Andrew G; Ptak, Aaron J; McMahon, William E

    2013-11-05

    Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

  18. Flash μ-fluidics: a rapid prototyping method for fabricating microfluidic devices

    KAUST Repository

    Buttner, Ulrich

    2016-08-01

    Microfluidics has advanced in terms of design and structures; however, fabrication methods are time-consuming or expensive relative to facility costs and equipment needed. This work demonstrates a fast and economically viable 2D/3D maskless digital light-projection method based on a stereolithography process. Unlike other fabrication methods, one exposure step is used to form the whole device. Flash microfluidics is achieved by incorporating bonding and channel fabrication of complex structures in just 2.5 s to 4 s and by fabricating channel heights between 25 μm and 150 μm with photopolymer resin. The features of this fabrication technique, such as time and cost saving and easy fabrication, are used to build devices that are mostly needed in microfluidic/lab-on-chip systems. Due to the fast production method and low initial setup costs, the process could be used for point of care applications. © 2016 The Royal Society of Chemistry.

  19. Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

    Science.gov (United States)

    Aveline, David C.; Adell, Philippe C.; Allen, Gregory R.; Guertin, Steven M.; McClure, Steven S.

    2011-01-01

    Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all

  20. Thin film lithium-based batteries and electrochromic devices fabricated with nanocomposite electrode materials

    Energy Technology Data Exchange (ETDEWEB)

    Gillaspie, Dane T; Lee, Se-Hee; Tracy, C. Edwin; Pitts, John Roland

    2014-02-04

    Thin-film lithium-based batteries and electrochromic devices (10) are fabricated with positive electrodes (12) comprising a nanocomposite material composed of lithiated metal oxide nanoparticles (40) dispersed in a matrix composed of lithium tungsten oxide.

  1. SEMICONDUCTOR DEVICES: A new integrated SOI power device based on self-isolation technology

    Science.gov (United States)

    Huanmei, Gao; Xiaorong, Luo; Wei, Zhang; Hao, Deng; Tianfei, Lei

    2010-08-01

    A new SOI LDMOS structure with buried n-islands (BNIs) on the top interface of the buried oxide (BOX) is presented in a p-SOI high voltage integrated circuits (p-SOI HVICs), which exhibits good self-isolation performance between the power device and low-voltage control circuits. Furthermore, both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm, but also modulate the lateral electric field distribution, resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS. A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.

  2. Fabrication and Optical Recombination in III-Nitride Microstructures and Devices

    Science.gov (United States)

    2003-10-01

    Fabrication and optical investigations of III-nitride microstructures Our group has pioneered the fabrication of micro - and nano -size photonic... pumped individual III-nitride micro -size LEDs and micro -LED arrays and observed enhanced quantum efficiencies. The micro -size LEDs were fabricated...quality III-nitride QWs, heterostructures, microstructures, and micro -devices and to study their optical and optoeletronic properties. By optimizing

  3. Fabrication of polystyrene microfluidic devices using a pulsed CO2 laser system

    KAUST Repository

    Li, Huawei

    2013-10-10

    In this article, we described a simple and rapid method for fabrication of droplet microfluidic devices on polystyrene substrate using a CO2 laser system. The effects of the laser power and the cutting speed on the depth, width and aspect ratio of the microchannels fabricated on polystyrene were investigated. The polystyrene microfluidic channels were encapsulated using a hot press bonding technique. The experimental results showed that both discrete droplets and laminar flows could be obtained in the device.

  4. Fabrication of CVD graphene-based devices via laser ablation for wafer-scale characterization

    DEFF Research Database (Denmark)

    Mackenzie, David; Buron, Jonas Christian Due; Whelan, Patrick Rebsdorf;

    2015-01-01

    Selective laser ablation of a wafer-scale graphene film is shown to provide flexible, high speed (1 wafer/hour) device fabrication while avoiding the degradation of electrical properties associated with traditional lithographic methods. Picosecond laser pulses with single pulse peak fluences of 140......-effect mobility, doping level, on–off ratio, and conductance minimum before and after laser ablation fabrication....

  5. SEMICONDUCTOR DEVICES: A high-performance enhancement-mode AlGaN/GaN HEMT

    Science.gov (United States)

    Zhihong, Feng; Shengyin, Xie; Rui, Zhou; Jiayun, Yin; Wei, Zhou; Shujun, Cai

    2010-08-01

    An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment. The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current density of 667 mA/mm at a gate bias of 4 V and a peak transconductance of 201 mS/mm at a gate bias of 0.8 V. The current-gain cut-off frequency and the maximum oscillation frequency of the enhancement-mode device with a gate length of 1 μm are 10.3 GHz and 12.5 GHz, respectively, which is comparable with the depletion-mode device. A numerical simulation supported by SIMS results was employed to give a reasonable explanation that the fluorine ions act as an acceptor trap center in the barrier layer.

  6. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure

    Science.gov (United States)

    Chu, T. L.

    1975-01-01

    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  7. Fabrication and characterisation of carbon-based devices

    OpenAIRE

    2012-01-01

    Thin film material properties and measurement characterisation techniques are crucial for the development of micro-electromechanical systems (MEMS) devices. Furthermore, as the technology scales down from microtechnology towards nanotechnology, nanoscale materials such as carbon nanotubes (CNTs) are required in electronic devices to overcome the limitations encountered by conventional materials at the nanoscale. The integration of CNTs into micro-electronics and material app...

  8. Fabrication and performance of contamination free individual single-walled carbon nanotube optical devices.

    Science.gov (United States)

    Zhou, Yuxiu; Cheng, Rong; Liu, Jianqiang; Li, Tie

    2014-06-01

    Contamination free individual single-walled carbon nanotube (SWCNT) optical devices are fabricated using a hybrid method in the purpose of increase sensitivity as well as further understanding the sensing mechanism. The devices were tested in vacuum to avoid contamination. Three typical devices are discussed comparatively. Under infrared lamp illumination, photovoltaic and photoconductive properties are revealed in device A and B respectively, while device C shows no detectable signal. The photoresponse of device B reaches 108% at 78 K, much larger than that of horizontally aligned or network carbon nanotube devices, indicating priority of the individual nanotube device structure. Interestingly, the temperature characteristics of device A and B are just the opposite. The individual SWCNT devices hold promise in high performance and low cost optical sensors as well as nano-scale solar cells.

  9. Heterodyne mixing of millimetre electromagnetic waves and sub-THz sound in a semiconductor device

    Science.gov (United States)

    Heywood, Sarah L.; Glavin, Boris A.; Beardsley, Ryan P.; Akimov, Andrey V.; Carr, Michael W.; Norman, James; Norton, Philip C.; Prime, Brian; Priestley, Nigel; Kent, Anthony J.

    2016-08-01

    We demonstrate heterodyne mixing of a 94 GHz millimetre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of frequency ~100 GHz, generated by pulsed laser excitation of a semiconductor surface. The mixing takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal is in the 1–12 GHz range. The mixing process preserves all the spectral content in the acoustic signal that falls within the intermediate frequency bandwidth. Therefore this technique may find application in high-frequency acoustic spectroscopy measurements, exploiting the nanometre wavelength of sub-THz sound. The result also points the way to exploiting acoustoelectric effects in photonic devices working at sub-THz and THz frequencies, which could provide functionalities at these frequencies, e.g. acoustic wave filtering, that are currently in widespread use at lower (GHz) frequencies.

  10. Finite difference method and analysis for three-dimensional semiconductor device of heat conduction

    Institute of Scientific and Technical Information of China (English)

    袁益让

    1996-01-01

    The mathematical model of the three-dimensional semiconductor devices of heat conduction is described by a system of four quasilinear partial differential equations for initial boundary value problem. One equation in elliptic form is for the electric potential; two equations of convection-dominated diffusion type are for the electron and hole concentration; and one heat conduction equation is for temperature. Characteristic finite difference schemes for two kinds of boundary value problems are put forward. By using the thick and thin grids to form a complete set and treating the product threefold-quadratic interpolation, variable time step method with the boundary condition, calculus of variations and the theory of prior estimates and techniques, the optimal error estimates in L2 norm are derived in the approximate solutions.

  11. Fabric-based integrated energy devices for wearable activity monitors.

    Science.gov (United States)

    Jung, Sungmook; Lee, Jongsu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

    2014-09-01

    A wearable fabric-based integrated power-supply system that generates energy triboelectrically using human activity and stores the generated energy in an integrated supercapacitor is developed. This system can be utilized as either a self-powered activity monitor or as a power supply for external wearable sensors. These demonstrations give new insights for the research of wearable electronics.

  12. Fabrication and bonding of thiol-ene-based microfluidic devices

    DEFF Research Database (Denmark)

    Sikanen, Tiina M; Lafleur, Josiane P.; Moilanen, Maria-Elisa

    2013-01-01

    In this work, the bonding strength of microchips fabricated by thiol-ene free-radical polymerization was characterized in detail by varying the monomeric thiol/allyl composition from the stoichiometric ratio (1:1) up to 100% excess of thiol (2:1) or allyl (1:2) functional groups. Four different t...

  13. Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

    Directory of Open Access Journals (Sweden)

    K. Hiruma

    2012-01-01

    Full Text Available The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the 〈111〉B or 〈111〉A crystallographic orientation from lithography-defined SiO2 mask openings on a group III-V semiconductor substrate surface. An InGaAs quantum well (QW in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescence spectra from QWs with various thicknesses. Transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements have been used to analyze the crystal structure and the atomic composition profile for the nanowires. GaAs/AlGaAs, InP/InAs/InP, and GaAs/GaAsP core-shell structures have been found to be effective for the radial heterostructures to increase photoluminescence intensity and have enabled laser emissions from a single GaAs/GaAsP nanowire waveguide. The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.

  14. The Influence of the Construction of the Cooling System of Semiconductor Devices on the Watt-Hour Efficiency of DC-DC Converters

    Science.gov (United States)

    Zarębski, Janusz; Górecki, Krzysztof

    In the paper the influence of cooling conditions of semiconductor devices on the characteristics of a boost converter is considered. The form of the thermal model of semiconductor devices is proposed and some results of calculations and measurements of the characteristics of this converter are shown. The investigations were performed for the selected types of power MOSFETs operating at different cooling conditions.

  15. Transmission line pulse system for avalanche characterization of high power semiconductor devices

    Science.gov (United States)

    Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

    2013-05-01

    Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different

  16. Co-deposition methods for the fabrication of organic optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, Mark E.; Liu, Zhiwei; Wu, Chao

    2016-09-06

    A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

  17. Rapid fabrication of microfluidic PDMS devices from reusable PDMS molds using laser ablation

    Science.gov (United States)

    Isiksacan, Ziya; Tahsin Guler, M.; Aydogdu, Berkan; Bilican, Ismail; Elbuken, Caglar

    2016-03-01

    The conventional fabrication methods for microfluidic devices require cleanroom processes that are costly and time-consuming. We present a novel, facile, and low-cost method for rapid fabrication of polydimethylsiloxane (PDMS) molds and devices. The method consists of three main fabrication steps: female mold (FM), male mold (MM), and chip fabrication. We use a CO2 laser cutter to pattern a thin, spin-coated PDMS layer for FM fabrication. We then obtain reusable PDMS MM from the FM using PDMS/PDMS casting. Finally, a second casting step is used to replicate PDMS devices from the MM. Demolding of one PDMS layer from another is carried out without any potentially hazardous chemical surface treatment. We have successfully demonstrated that this novel method allows fabrication of microfluidic molds and devices with precise dimensions (thickness, width, length) using a single material, PDMS, which is very common across microfluidic laboratories. The whole process, from idea to device testing, can be completed in 1.5 h in a standard laboratory.

  18. Development of a Handmade Conductivity Measurement Device for a Thin-Film Semiconductor and Its Application to Polypyrrole

    Science.gov (United States)

    Seng, Set; Shinpei, Tomita; Yoshihiko, Inada; Masakazu, Kita

    2014-01-01

    The precise measurement of conductivity of a semiconductor film such as polypyrrole (Ppy) should be carried out by the four-point probe method; however, this is difficult for classroom application. This article describes the development of a new, convenient, handmade conductivity device from inexpensive materials that can measure the conductivity…

  19. MULTISTEP FINITE VOLUME APPROXIMATIONS TO THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE ON GENERAL 2D OR 3D MESHES

    Institute of Scientific and Technical Information of China (English)

    Min Yang

    2007-01-01

    In this paper, we consider a hydrodynamic model of the semiconductor device. The approximate solutions are obtained by a mixed finite volume method for the potential equation and multistep upwind finite volume methods for the concentration equations.Error estimates in some discrete norms are derived under some regularity assumptions on the exact solutions.

  20. Development of a Handmade Conductivity Measurement Device for a Thin-Film Semiconductor and Its Application to Polypyrrole

    Science.gov (United States)

    Seng, Set; Shinpei, Tomita; Yoshihiko, Inada; Masakazu, Kita

    2014-01-01

    The precise measurement of conductivity of a semiconductor film such as polypyrrole (Ppy) should be carried out by the four-point probe method; however, this is difficult for classroom application. This article describes the development of a new, convenient, handmade conductivity device from inexpensive materials that can measure the conductivity…

  1. New photovoltaic devices based on the sensitization of p-type semiconductors: challenges and opportunities.

    Science.gov (United States)

    Odobel, Fabrice; Le Pleux, Loïc; Pellegrin, Yann; Blart, Errol

    2010-08-17

    Because solar energy is the most abundant renewable energy resource, the clear connection between human activity and global warming has strengthened the interest in photovoltaic science. Dye-sensitized solar cells (DSSCs) provide a promising low-cost technology for harnessing this energy source. Until recently, much of the research surrounding DSSCs had been focused on the sensitization of n-type semiconductors, such as titanium dioxide (Gratzel cells). In an n-type dye-sensitized solar cell (n-DSSC), an electron is injected into the conduction band of an n-type semiconductor (n-SC) from the excited state of the sensitizer. Comparatively few studies have examined the sensitization of wide bandgap p-type semiconductors. In a p-type DSSC (p-DSSC), the photoexcited sensitizer is reductively quenched by hole injection into the valence band of a p-type semiconductor (p-SC). The study of p-DSSCs is important both to understand the factors that control the rate of hole photoinjection and to aid the rational design of efficient p-DSSCs. In theory, p-DSSCs should be able to work as efficiently as n-DSSCs. In addition, this research provides a method for preparing tandem DSSCs consisting of a TiO(2)-photosensitized anode and a photosensitized p-type SC as a cathode. Tandem DSSCs are particularly important because they represent low-cost photovoltaic devices whose photoconversion efficiencies could exceed 15%. This Account describes recent research results on p-DSSCs. Because these photoelectrochemical devices are the mirror images of conventional n-DSSCs, they share some structural similarities, but they use different materials and have different charge transfer kinetics. In this technology, nickel oxide is the predominant p-SC material used, but much higher photoconversion efficiencies could be achieved with new p-SCs materials with deeper valence band potential. Currently, iodide/triiodide is the main redox mediator of electron transport within these devices, but we expect

  2. Design, fabrication and SNOM investigation of plasmonic devices

    DEFF Research Database (Denmark)

    Malureanu, Radu; Zenin, Vladimir A.; Andryieuski, Andrei

    . In this work we will present an overview of our simulation, fabrication and characterisation activity in the plasmonic field where we tackle these issues. We start with presenting an optimised nanoantenna for coupling of free-propagating waves into a subwavelength slot waveguide modes. Optimised antennae show...... an increase in coupling efficiency up to 185 times compared to a bare waveguide. Once optimized, the nanoantennae were fabricated and the propagation in the slot waveguides was characterised. The characterisation shows an increase in the effective area (proportional to the coupling efficiency) of up to 175...... a field enhancement of up to ∼ 12000 evenly distributed in a volume of ∼ 30x 30 x 10 nm3. The same taper can be used also for modifying the waveguide profile from a wide strip waveguide to a nanorod waveguide showing both the flexibility of our taper design as well as allowing to measure and compare...

  3. Growth and characterization of rutile TiO2 nanorods on various substrates with fabricated fast-response metal-semiconductor-metal UV detector based on Si substrate

    Science.gov (United States)

    Selman, Abbas M.; Hassan, Z.

    2015-07-01

    Rutile-phase titanium dioxide nanorods (NRs) were synthesized successfully on p-type silicon (Si) (1 1 1), c-plane sapphire (Al2O3), glass coated with fluorine-doped tin oxide (FTO), glass, and quartz substrates via chemical bath deposition method. All substrates were seeded with a TiO2 seed layer synthesized with a radio frequency reactive magnetron sputtering system prior to NRs growth. The effect of substrate type on structural, morphological, and optical properties of rutile TiO2 NRs was studied. X-ray diffraction, Raman spectroscopy, and field-emission scanning electron microscopy analyses showed the tetragonal rutile structure of the synthesized TiO2 NRs. Optical properties were examined with photoluminescence (PL) spectroscopy of the grown rutile NRs on all substrates, with the spectra exhibiting one strong ultraviolet emission peak intensity compared with broad visible peak. The optimal sample of rutile NRs was grown on Si substrate. Thus, a fast-response metal-semiconductor-metal ultraviolet (UV) detector was fabricated. Upon exposure to 365 nm light (2.3 mW/cm2) at 5 V bias, the device displays 2.62 × 10-5 A photocurrent, and the response and recovery times are calculated as 18.5 and 19.1 ms, respectively. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  4. Templated Chemically Deposited Semiconductor Optical Fiber Materials

    Science.gov (United States)

    Sparks, Justin R.; Sazio, Pier J. A.; Gopalan, Venkatraman; Badding, John V.

    2013-07-01

    Chemical deposition is a powerful technology for fabrication of planar microelectronics. Optical fibers are the dominant platform for telecommunications, and devices such as fiber lasers are forming the basis for new industries. High-pressure chemical vapor deposition (HPCVD) allows for conformal layers and void-free wires of precisely doped crystalline unary and compound semiconductors inside the micro-to-nanoscale-diameter pores of microstructured optical fibers (MOFs). Drawing the fibers to serve as templates into which these semiconductor structures can be fabricated allows for geometric design flexibility that is difficult to achieve with planar fabrication. Seamless coupling of semiconductor optoelectronic and photonic devices with existing fiber infrastructure thus becomes possible, facilitating all-fiber technological approaches. The deposition techniques also allow for a wider range of semiconductor materials compositions to be exploited than is possible by means of preform drawing. Gigahertz bandwidth junction-based fiber devices can be fabricated from doped crystalline semiconductors, for example. Deposition of amorphous hydrogenated silicon, which cannot be drawn, allows for the exploitation of strong nonlinear optical function in fibers. Finally, crystalline compound semiconductor fiber cores hold promise for high-power infrared light-guiding fiber devices and subwavelength-resolution, large-area infrared imaging.

  5. Fabrication of efficient thermoacoustic device with an interdigitated-like electrode on indium tin oxide glass

    Science.gov (United States)

    Tsai, Ming-shan; Yang, Ko-kang; Chen, Sy-hann; Ting, Chen-ching; Jiang, I.-min

    2016-10-01

    A thermoacoustic device was fabricated on indium tin oxide (ITO) glass, exhibiting an interdigitated-like electrode pattern. Our fabrication method enhanced the sound performance by approximately 20 dB compared with that of plain ITO film. Two approaches were adopted in this study to enhance the sound pressure level (SPL). One was to decrease the heat capacity per unit area of the device by reducing the thickness of the conductor film, and the other was to increase the thermal diffusivity of the device by applying a thin Au film on the electrode. We observed that heat generated by electron accumulation on ITO protrusions resulted in a large temperature oscillation of the surroundings and induced an SPL increase. A 4 nm Au film coating on the fabricated thermoacoustic device assisted thermal energy exchange with close-proximity air, improving the efficiency by an SPL of 7 dB.

  6. Tailored surface-enhanced Raman nanopillar arrays fabricated by laser-assisted replication for biomolecular detection using organic semiconductor lasers.

    Science.gov (United States)

    Liu, Xin; Lebedkin, Sergei; Besser, Heino; Pfleging, Wilhelm; Prinz, Stephan; Wissmann, Markus; Schwab, Patrick M; Nazarenko, Irina; Guttmann, Markus; Kappes, Manfred M; Lemmer, Uli

    2015-01-27

    Organic semiconductor distributed feedback (DFB) lasers are of interest as external or chip-integrated excitation sources in the visible spectral range for miniaturized Raman-on-chip biomolecular detection systems. However, the inherently limited excitation power of such lasers as well as oftentimes low analyte concentrations requires efficient Raman detection schemes. We present an approach using surface-enhanced Raman scattering (SERS) substrates, which has the potential to significantly improve the sensitivity of on-chip Raman detection systems. Instead of lithographically fabricated Au/Ag-coated periodic nanostructures on Si/SiO2 wafers, which can provide large SERS enhancements but are expensive and time-consuming to fabricate, we use low-cost and large-area SERS substrates made via laser-assisted nanoreplication. These substrates comprise gold-coated cyclic olefin copolymer (COC) nanopillar arrays, which show an estimated SERS enhancement factor of up to ∼ 10(7). The effect of the nanopillar diameter (60-260 nm) and interpillar spacing (10-190 nm) on the local electromagnetic field enhancement is studied by finite-difference-time-domain (FDTD) modeling. The favorable SERS detection capability of this setup is verified by using rhodamine 6G and adenosine as analytes and an organic semiconductor DFB laser with an emission wavelength of 631.4 nm as the external fiber-coupled excitation source.

  7. Fabrication of smart chemical sensors based on transition-doped-semiconductor nanostructure materials with µ-chips.

    Science.gov (United States)

    Rahman, Mohammed M; Khan, Sher Bahadar; Asiri, Abdullah M

    2014-01-01

    Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm(2)) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r(2) = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm(-2)mM(-1) and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I-V sensors on μ-chips.

  8. Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

    Energy Technology Data Exchange (ETDEWEB)

    Gilbertson, A. M.; Cohen, L. F. [Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ (United Kingdom); Sadeghi, Hatef; Lambert, C. J. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Panchal, V.; Kazakova, O. [National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Solin, S. A. [Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2BZ (United Kingdom); Department of Physics and Institute for Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130 (United States)

    2015-12-07

    We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

  9. Growth and Characterization of III-V Semiconductors for Device Applications

    Science.gov (United States)

    Williams, Michael D.

    2000-01-01

    The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars.

  10. On the coherence/incoherence of electron transport in semiconductor heterostructure optoelectronic devices

    Science.gov (United States)

    Harrison, P.; Indjin, D.; Savić, I.; Ikonić, Z.; Evans, C. A.; Vukmirović, N.; Kelsall, R. W.; McTavish, J.; Jovanović, V. D.; Milanović, V.

    2008-02-01

    This paper compares and contrasts different theoretical approaches based on incoherent electron scattering transport with experimental measurements of optoelectronic devices formed from semiconductor heterostructures. The Monte Carlo method which makes no a priori assumptions about the carrier distribution in momentum or phase space is compared with less computationally demanding energy-balance rate equation models which assume thermalised carrier distributions. It is shown that the two approaches produce qualitatively similar results for hole transport in p-type Si 1-xGe x/Si superlattices designed for terahertz emission. The good agreement of the predictions of rate equation calculations with experimental measurements of mid- and far-infrared quantum cascade lasers, quantum well infrared photodetectors and quantum dot infrared photodetectors substantiate the assumption of incoherent scattering dominating the transport in these quantum well based devices. However, the paper goes on to consider the possibility of coherent transport through the density matrix method and suggests an experiment that could allow coherent and incoherent transport to be distinguished from each other.

  11. Semiconductor diode laser material and devices with emission in visible region of the spectrum

    Science.gov (United States)

    Ladany, I.; Kressel, H.

    1975-01-01

    Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

  12. Fabrication of three-dimensional scaffolds using precision extrusion deposition with an assisted cooling device

    Energy Technology Data Exchange (ETDEWEB)

    Hamid, Q; Snyder, J; Wang, C; Guceri, S; Sun, W [Department of Mechanical Engineering and Mechanics, Drexel University, Philadelphia, PA (United States); Timmer, M; Hammer, J, E-mail: sunwei@drexel.edu [Advanced Technologies and Regenerative Medicine, Somerville, NJ (United States)

    2011-09-15

    In the field of biofabrication, tissue engineering and regenerative medicine, there are many methodologies to fabricate a building block (scaffold) which is unique to the target tissue or organ that facilitates cell growth, attachment, proliferation and/or differentiation. Currently, there are many techniques that fabricate three-dimensional scaffolds; however, there are advantages, limitations and specific tissue focuses of each fabrication technique. The focus of this initiative is to utilize an existing technique and expand the library of biomaterials which can be utilized to fabricate three-dimensional scaffolds rather than focusing on a new fabrication technique. An expanded library of biomaterials will enable the precision extrusion deposition (PED) device to construct three-dimensional scaffolds with enhanced biological, chemical and mechanical cues that will benefit tissue generation. Computer-aided motion and extrusion drive the PED to precisely fabricate micro-scaled scaffolds with biologically inspired, porosity, interconnectivity and internal and external architectures. The high printing resolution, precision and controllability of the PED allow for closer mimicry of tissues and organs. The PED expands its library of biopolymers by introducing an assisting cooling (AC) device which increases the working extrusion temperature from 120 to 250 deg. C. This paper investigates the PED with the integrated AC's capabilities to fabricate three-dimensional scaffolds that support cell growth, attachment and proliferation. Studies carried out in this paper utilized a biopolymer whose melting point is established to be 200 deg. C. This polymer was selected to illustrate the newly developed device's ability to fabricate three-dimensional scaffolds from a new library of biopolymers. Three-dimensional scaffolds fabricated with the integrated AC device should illustrate structural integrity and ability to support cell attachment and proliferation.

  13. Application of kinetic flux vector splitting scheme for solving multi-dimensional hydrodynamical models of semiconductor devices

    Science.gov (United States)

    Nisar, Ubaid Ahmed; Ashraf, Waqas; Qamar, Shamsul

    In this article, one and two-dimensional hydrodynamical models of semiconductor devices are numerically investigated. The models treat the propagation of electrons in a semiconductor device as the flow of a charged compressible fluid. It plays an important role in predicting the behavior of electron flow in semiconductor devices. Mathematically, the governing equations form a convection-diffusion type system with a right hand side describing the relaxation effects and interaction with a self consistent electric field. The proposed numerical scheme is a splitting scheme based on the kinetic flux-vector splitting (KFVS) method for the hyperbolic step, and a semi-implicit Runge-Kutta method for the relaxation step. The KFVS method is based on the direct splitting of macroscopic flux functions of the system on the cell interfaces. The second order accuracy of the scheme is achieved by using MUSCL-type initial reconstruction and Runge-Kutta time stepping method. Several case studies are considered. For validation, the results of current scheme are compared with those obtained from the splitting scheme based on the NT central scheme. The effects of various parameters such as low field mobility, device length, lattice temperature and voltage are analyzed. The accuracy, efficiency and simplicity of the proposed KFVS scheme validates its generic applicability to the given model equations. A two dimensional simulation is also performed by KFVS method for a MESFET device, producing results in good agreement with those obtained by NT-central scheme.

  14. Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

    Science.gov (United States)

    Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

    1995-07-25

    A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

  15. Charicteristic of a novel optoelectronic polymer and related device fabrication

    Institute of Scientific and Technical Information of China (English)

    SUN Jian-yuan; HE Zhi-qun; HAN Xiao; WANG Bin; WANG Yong-sheng; LlU Ying-liang; CAO Shao-kui

    2007-01-01

    In this paper a preliminary investigation of a novel optoelectronic polymer, poly (p-phenylene N-4-n-butylphenyl-N,N-bis-4-vinylenephenylamine) (PNB), is reported. A single layer structure of ITO/PNB/Al was prepared via spin-coating of PNB solution as a thin film on the top of an ITO substrate, while aluminum top electrode was vacuum evaporated. Dark currentvoltage characteristics of this device showed a typical rectifying behaviour. Photovoltaic response under a monochromatic illumination at 420 nm was observed, with an open circuit voltage of 0.3 V and fill factor of 0.21. Spectral response and optical absorption were found to be matched well. It was also discovered that the device showed a green electroluminescent emission at a forward bias. Turn-on voltage of the device was about 6 V and light output about 22.6 nW at a forward bias of 10 V. The work demonstrated that the PNB material might possess dual exciton sites resulting in a competition for excitons to be either separated or recombined. Both effects were associated with each other, which limited the photovoltaic or electroluminescence to some degrees.

  16. Sinterless Fabrication Of Contact Pads On InP Devices

    Science.gov (United States)

    Weizer, Victor G.; Fatemi, Navid S.; Korenyi-Both, Andras L.

    1995-01-01

    Research has shown that with proper choice of material, low-resistance contact pads deposited on solar cells and other devices by improved technique that does not involve sintering. Research directed at understanding mechanisms involved in contact-sintering process has resulted in identification of special group of materials that includes phosphides of gold, silver, and nickel; specifically, Au(2)P(3), AgP(2), and Ni(3)P. Incorporation of phosphide interlayer substantially reduces resistivity between gold current-carrying layer and indium phosphide substrate. Further research indicated only very thin interlayer of any of these compounds needed to obtain low contact resistance, without subjecting contact to destructive sintering process.

  17. Fabrication of fluidic devices with 30 nm nanochannels by direct imprinting

    DEFF Research Database (Denmark)

    Cuesta, Irene Fernandez; Palmarelli, Anna Laura; Liang, Xiaogan

    2011-01-01

    . Furthermore, the devices are made of all-transparent materials, and the method allows flexibility for the type of substrates used. The active material (an inorganic-organic hybrid polymer) used for the fabrication of the device has been carefully chosen, so it has adequate surface properties (inert...... for liquid input. A master silicon stamp with the multilevel structures is fabricated first, and then a negative replica is made, to be used as a stamp for ultraviolet nanoimprint lithography (UV-NIL). Afterwards, just one single UV-NIL step is necessary for patterning all the the micro and nanostructures...

  18. Contactless graphene conductance measurements: the effect of device fabrication on terahertz time-domain spectroscopy

    DEFF Research Database (Denmark)

    Mackenzie, David; Buron, Jonas Christian Due; Bøggild, Peter

    2016-01-01

    We perform contactless full-wafer maps of the electrical conductance of a 4-inch wafer of single-layer CVD graphene using terahertz time-domain spectroscopy both before and after deposition of metal contacts and fabrication of devices via laser ablation. We find that there is no significant change...... in the measured conductance of graphene before and after device fabrication. We also show that precise terahertz time-domain spectroscopy can be performed when the beam spot is at sufficient distance (>1.2 mm) from metal contacts....

  19. The effects of heat treatment on microfluidic devices fabricated in silica glass by femtosecond lasers

    Institute of Scientific and Technical Information of China (English)

    Li Yan; Qu Shi-Liang

    2012-01-01

    We fabricated complex microfluidic devices in silica glass by water-assisted femtosecond laser ablation and sub-sequent heat treatment.The experimental results show that after heat treatment,the diameter of the microchannels is significantly reduced and the internal surface roughness is improved.The diameters of the fabricated microchannels can be modulated by changing the annealing temperature and the annealing time.During annealing,the temperature affects the diameter and shape of the protrusions in microfluidic devices very strongly,and these changes are mainly caused by uniform expansion and the action of surface tension.

  20. Plant virus directed fabrication of nanoscale materials and devices.

    Science.gov (United States)

    Culver, James N; Brown, Adam D; Zang, Faheng; Gnerlich, Markus; Gerasopoulos, Konstantinos; Ghodssi, Reza

    2015-05-01

    Bottom-up self-assembly methods in which individual molecular components self-organize to form functional nanoscale patterns are of long-standing interest in the field of materials sciences. Such self-assembly processes are the hallmark of biology where complex macromolecules with defined functions assemble from smaller molecular components. In particular, plant virus-derived nanoparticles (PVNs) have drawn considerable attention for their unique self-assembly architectures and functionalities that can be harnessed to produce new materials for industrial and biomedical applications. In particular, PVNs provide simple systems to model and assemble nanoscale particles of uniform size and shape that can be modified through molecularly defined chemical and genetic alterations. Furthermore, PVNs bring the added potential to "farm" such bio-nanomaterials on an industrial scale, providing a renewable and environmentally sustainable means for the production of nano-materials. This review outlines the fabrication and application of several PVNs for a range of uses that include energy storage, catalysis, and threat detection.

  1. 半导体器件辐射效应研究%Research trends of radiation effects in semiconductor device

    Institute of Scientific and Technical Information of China (English)

    刘忠立

    2012-01-01

    Basing on the retrospect for rich research fruits of radiation effects in semiconductor device, this paper introduces some research trends of radiation effects in semiconductor devices, such as single event effects in avionics and on the ground, radiation effects in synthetic radiation environments, single event effects in compound semiconductor devices, radiation effects in photoelectric devices, radiation effects in power semiconductor devices, radiation effects in Silicon on Insulator(SOI) CMOS integrated circuits and design techniques of radiation hardening for mixed-signal circuits. Some typical research results are given and some research directions which should be continued also are pointed out.%在回顾半导体器件辐射效应取得丰富研究成果的基础上,介绍近年来半导体辐射效应研究的一些动向,其中包括航空及地面环境的单粒子效应、综合辐射环境下的辐射效应、化合物半导体器件的单粒子效应、光电器件的辐射效应、功率半导体器件的辐射效应、绝缘体上硅(SOI)CMOS集成电路的辐射效应及混合信号电路辐射加固设计技术,给出了一些典型的研究结果,并指出在这些效应方面应该继续研究的方向.

  2. Inorganic nanotubes and electro-fluidic devices fabricated therefrom

    Science.gov (United States)

    Yang, Peidong; Majumdar, Arunava; Fan, Rong; Karnik, Rohit

    2011-03-01

    Nanofluidic devices incorporating inorganic nanotubes fluidly coupled to channels or nanopores for supplying a fluid containing chemical or bio-chemical species are described. In one aspect, two channels are fluidly interconnected with a nanotube. Electrodes on opposing sides of the nanotube establish electrical contact with the fluid therein. A bias current is passed between the electrodes through the fluid, and current changes are detected to ascertain the passage of select molecules, such as DNA, through the nanotube. In another aspect, a gate electrode is located proximal the nanotube between the two electrodes thus forming a nanofluidic transistor. The voltage applied to the gate controls the passage of ionic species through the nanotube selected as either or both ionic polarities. In either of these aspects the nanotube can be modified, or functionalized, to control the selectivity of detection or passage.

  3. An empirical formula for yield estimation from singly truncated performance data of qualified semiconductor devices

    Institute of Scientific and Technical Information of China (English)

    Liang Tao; Jia Xinzhang

    2012-01-01

    The problem of yield estimation merely from performance test data of qualified semiconductor devices is studied.An empirical formula is presented to calculate the yield directly by the sample mean and standard deviation of singly truncated normal samples based on the theoretical relation between process capability indices and the yield.Firstly,we compare four commonly used normality tests under different conditions,and simulation results show that the Shapiro-Wilk test is the most powerful test in recognizing singly truncated normal samples.Secondly,the maximum likelihood estimation method and the empirical formula are compared by Monte Carlo simulation.The results show that the simple empirical formulas can achieve almost the same accuracy as the maximum likelihood estimation method but with a much lower amount of calculations when estimating yield from singly truncated normal samples.In addition,the empirical formula can also be used for doubly truncated normal samples when some specific conditions are met.Practical examples of yield estimation from academic and IC test data are given to verify the effectiveness of the proposed method.

  4. Enhancement in the gain recovery of a semiconductor optical amplifier by device temperature control

    Indian Academy of Sciences (India)

    YOGESH KUMAR; M R SHENOY

    2016-12-01

    We present a numerical investigation on the temperature dependence of gain recovery, of a semiconductor optical amplifier (SOA). It is shown that the decrease in temperature significantly speed-up the gain recovery of the SOA. Under typical operating conditions, a 20 K reduction in temperature of the SOA results in a decrease of 150 ps in the gain recovery time. A comparative estimation of device temperature and assisted-light power requirements for enhancing the gain recovery has also been carried out. It is found that, a decrease of 8 K in the temperature of the SOA, is as effective in enhancing the gain recovery as injection of 25 dBm assistedlight power in the counter-propagating mode. Our study shows that under moderate current biasing conditions, temperature reduction is a better and convenient option to speed-up the gain recovery of an SOA, than the use of external assisted-light injection, which requires an additional laser source and wavelength division multiplexing(WDM) components for coupling and de-coupling, leading to insertion losses in the communication channel.

  5. Heavy ion elastic recoil detection analysis of optoelectronic and semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Dytlewski, N.; Cohen, D.D. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Johnston, P.; Walker, S. [Royal Melbourne Inst. of Tech., VIC (Australia); Whitlow, H.; Hult, M. [Lund Univ. (Sweden); Oestling, M.; Zaring, C. [Royal Inst. of Tech., Stockholm (Sweden)

    1993-12-31

    In recent years, the use of heavy ion time-of-flight elastic recoil spectrometry (HIERDA) has been applied to analyse multi-phase, thin layer devices used in optoelectronics, semiconductors and solar power generation. HIERDA gives simultaneously, mass resolved elemental concentration vs depth profiles of the matrix constituents, and is particularly suited to the determination of light elements in a heavy matrix. The beam/target interaction process is similar to RBS, but has the difference that the recoiling target atoms are detected instead of the scattered projectile. High energy, heavy ions beams bombard the sample, ejecting recoil atoms which are detected at a forward angle of 45 deg. A time-of-flight and total energy detection system enables the ejected particle`s mass to be identified, and allows energy spectra to be obtained and interpreted in an analogous way to RBS, but with the important difference that the elemental spectra are separated, and not superimposed on a background as in RBS. Some of the measurements made with a HIERDA system on the ANTARES Tandem Accelerator at ANSTO are described. 1 refs., 4 figs.

  6. The way to zeros: The future of semiconductor device and chemical mechanical polishing technologies

    Science.gov (United States)

    Tsujimura, Manabu

    2016-06-01

    For the last 60 years, the development of cutting-edge semiconductor devices has strongly emphasized scaling; the effort to scale down current CMOS devices may well achieve the target of 5 nm nodes by 2020. Planarization by chemical mechanical polishing (CMP), is one technology essential for supporting scaling. This paper summarizes the history of CMP transitions in the planarization process as well as the changing degree of planarity required, and, finally, introduces innovative technologies to meet the requirements. The use of CMP was triggered by the replacement of local oxidation of silicon (LOCOS) as the element isolation technology by shallow trench isolation (STI) in the 1980s. Then, CMP’s use expanded to improving embedability of aluminum wiring, tungsten (W) contacts, Cu wiring, and, more recently, to its adoption in high-k metal gate (HKMG) and FinFET (FF) processes. Initially, the required degree of planarity was 50 nm, but now 0 nm is required. Further, zero defects on a post-CMP wafer is now the goal, and it is possible that zero psi CMP loading pressure will be required going forward. Soon, it seems, everything will have to be “zero” and perfect. Although the process is also chemical in nature, the CMP process is actually mechanical with a load added using slurry particles several tens of nm in diameter. Zero load in the loading process, zero nm planarity with no trace of processing, and zero residual foreign material, including the very slurry particles used in the process, are all required. This article will provide an overview of how to achieve these new requirements and what technologies should be employed.

  7. GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01

    Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

  8. New Organic Semiconductor Materials Applied in Organic Photovoltaic and Optical Devices

    National Research Council Canada - National Science Library

    Andre F. S. Guedes; Vilmar P. Guedes; Simone Tartari; Mônica L. Souza; Idaulo J. Cunha

    2015-01-01

    The development of flexible organic photovoltaic solar cells, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry...

  9. Achieving high performance polymer optoelectronic devices for high efficiency, long lifetime and low fabrication cost

    Science.gov (United States)

    Huang, Jinsong

    This thesis described three types of organic optoelectronic devices: polymer light emitting diodes (PLED), polymer photovoltaic solar cell, and organic photo detector. The research in this work focuses improving their performance including device efficiency, operation lifetime simplifying fabrication process. With further understanding in PLED device physics, we come up new device operation model and improved device architecture design. This new method is closely related to understanding of the science and physics at organic/metal oxide and metal oxide/metal interface. In our new device design, both material and interface are considered in order to confine and balance all injected carriers, which has been demonstrated very be successful in increasing device efficiency. We created two world records in device efficiency: 18 lm/W for white emission fluorescence PLED, 22 lm/W for red emission phosphorescence PLED. Slow solvent drying process has been demonstrated to significantly increase device efficiency in poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61-butyric acid methyl ester (PCBM) mixture polymer solar cell. From the mobility study by time of flight, the increase of efficiency can be well correlated to the improved carrier transport property due to P3HT crystallization during slow solvent drying. And it is found that, similar to PLED, balanced carrier mobility is essential in high efficient polymer solar cell. There is also a revolution in our device fabrication method. A unique device fabrication method is presented by an electronic glue based lamination process combined with interface modification as a one-step polymer solar cell fabrication process. It can completely skip the thermal evaporation process, and benefit device lifetime by several merits: no air reactive. The device obtained is metal free, semi-transparent, flexible, self-encapsulated, and comparable efficiency with that by regular method. We found the photomultiplication (PM) phenomenon in C

  10. Structure and application of galvanomagnetic devices

    CERN Document Server

    Weiss, H

    1969-01-01

    International Series of Monographs on Semiconductors, Volume 8: Structure and Application of Galvanomagnetic Devices focuses on the composition, reactions, transformations, and applications of galvanomagnetic devices. The book first ponders on basic physical concepts, design and fabrication of galvanomagnetic devices, and properties of galvanomagnetic devices. Discussions focus on changes in electrical properties on irradiation with high-energy particles, magnetoresistor field-plate, Hall generator, preparation of semiconductor films by vacuum deposition, structure of field-plate magnetoresist

  11. Fabrication and assembly of MEMS accelerometer-based heart monitoring device with simplified, one step placement.

    Science.gov (United States)

    Tjulkins, Fjodors; Nguyen, Anh-Tuan Thai; Andreassen, Erik; Aasmundtveit, Knut; Hoivik, Nils; Hoff, Lars; Halvorsen, Per Steinar; Grymyr, Ole-Johannes; Imenes, Kristin

    2015-01-01

    An accelerometer-based heart monitoring system has been developed for real-time evaluation of heart wall movement. In this paper, assembly and fabrication of an improved device is presented along with system characterization and test data from an animal experiment. The new device is smaller and has simplified the implantation procedure compared to earlier prototypes. Leakage current recordings were well below those set by the corresponding standards.

  12. Silica optical fiber technology for devices and components design, fabrication, and international standards

    CERN Document Server

    Oh, Kyunghwan

    2012-01-01

    From basic physics to new products, Silica Optical Fiber Technology for Device and Components examines all aspects of specialty optical fibers. Moreover, the inclusion of the latest international standards governing optical fibers enables you to move from research to fabrication to commercialization. Reviews all the latest specialty optical fiber technologies, including those developed for high capacity WDM applications; broadband fiber amplifiers; fiber filleters based on periodic coupling; fiber branching devices; and fiber terminations Discusses key differences among sing

  13. Frequency and Temperature Dependence of Fabrication Parameters in Polymer Dispersed Liquid Crystal Devices

    Directory of Open Access Journals (Sweden)

    Juan C. Torres

    2014-05-01

    Full Text Available A series of polymer dispersed liquid crystal devices using glass substrates have been fabricated and investigated focusing on their electrical properties. The devices have been studied in terms of impedance as a function of frequency. An electric equivalent circuit has been proposed, including the influence of the temperature on the elements into it. In addition, a relevant effect of temperature on electrical measurements has been observed.

  14. Detection of ferromagnetic domain wall pinning and depinning with a semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Malec, Chris E.; Bennett, Brian R.; Johnson, Mark B. [Naval Research Laboratory, Washington, D.C. 20375 (United States)

    2015-12-21

    We demonstrate the detection of a ferromagnetic domain wall using a nanoscale Hall cross. A narrow permalloy wire is defined lithographically on top of a Hall cross fabricated from an InAs quantum well. The width of the Hall cross (500 nm–1 μm) is similar to the width of the ferromagnetic wire (200–500 nm), and a geometric pinning site is fabricated in the ferromagnetic wire to trap a domain wall within the area of the Hall cross. The devices provide a signal that is often the same order of magnitude as the offset Hall voltage when a domain wall is located above the Hall cross, and may be useful for memory applications. Different geometries for the Hall cross and ferromagnetic wire are tested, and radiofrequency pulses are sent into the wire to demonstrate current driven domain wall motion. Further changes to the Hall bar geometry with respect to the wire geometry are investigated by numerical computation. A large gain in signal is seen for Hall bars only slightly wider than the ferromagnetic wires as compared to those twice as wide, as well as a larger sensitivity to the exact position of the domain wall with respect to the center of the Hall cross.

  15. Bistable liquid crystal device fabricated via microscale liquid crystal alignment

    Science.gov (United States)

    Honma, Michinori; Toyoshima, Wataru; Nose, Toshiaki

    2016-10-01

    Bistable liquid crystal (LC) molecular orientation properties in micropatterned LC cells were investigated experimentally and theoretically. When an LC cell was heated to the phase-transition temperature and then cooled, an LC orientation with ±π/2-twist domains (±π/2-twist mode) was obtained. Furthermore, a different LC orientation with ±π-twist domains (±π-twist mode) was observed when a 10-V potential was applied across a sample LC cell. Both orientation states were stably retained over a long period. Herein, cross-sectional LC orientation models in the ±π/2- and ±π-twist modes are proposed to explain the generation and behavior of two different disclination lines. The total energies within one period in the ±π/2- and ±π-twist modes (F±π/2 and F±π, respectively) were estimated theoretically. These energies were found to depend on the LC layer thickness and to cross over at a certain thickness; this indicates that F±π is equal to F±π/2 at this equilibrium thickness. The best temporal stability is likely attained at this equilibrium thickness. We demonstrated a bistable color-switching device by combining a full-wave plate and crossed polarizers. When these optical components were configured properly, stable bistable switching between two colors was achieved.

  16. NiCu-based superconducting devices: fabrication and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Ruotolo, A [Universita di Napoli Federico II, Dip. Scienze Fisiche, Facolta d' Ingegneria, P.le Tecchio 80, 80125 Naples (Italy); Pullini, D [Centro Ricerche FIAT, Strada Torino 50, 10043 Orbassano, Turin (Italy); Adamo, C [Universita di Salerno, Dip. Scienze Fisiche, Via S. Allende 1, 84081 Baronissi, Salerno (Italy); Pepe, G P [Universita di Napoli Federico II, Dip. Scienze Fisiche, Facolta d' Ingegneria, P.le Tecchio 80, 80125 Naples (Italy); Maritato, L [Universita di Salerno, Dip. Scienze Fisiche, Via S. Allende 1, 84081 Baronissi, Salerno (Italy); Innocenti, G [Centro Ricerche FIAT, Strada Torino 50, 10043 Orbassano, Turin (Italy); Perlo, P [Centro Ricerche FIAT, Strada Torino 50, 10043 Orbassano, Turin (Italy)

    2006-06-01

    The critical Josephson current (I{sub C}) in superconducting/ferromagnetic (S/F) multilayer-based junctions can be controlled by changing the relative directions of the magnetization in the F-layers. Recent experimental works show that an enhancement of I{sub C} is achieved in S/F weak links when the alternating F-layers are antiparallel aligned. We present preliminary experimental results concerning the dependence of I{sub C} on the relative orientation of the ferromagnetic layers in S/F{sub 1}/I/F{sub 2}/S tunnel junctions where the F-layers are obtained by changing the relative composition of NiCu alloys. The multilayers were grown by electron beam deposition, and processed by Focused Ion Beam lithography. The magnetic state of the devices was directly determined by measuring the current perpendicular to plane (CPP) magnetoresistance (MR) at high bias. I{sub C} was found to be larger when the F-layers are antiparallel aligned. The maximum change of I{sub C} corresponds to the maximum change of MR. The application of a magnetic field induces a transition in the shape of the currentvoltage curve that seems to suggest Coulomb blockade effect.

  17. NiCu-based superconducting devices: fabrication and characterization

    Science.gov (United States)

    Ruotolo, A.; Pullini, D.; Adamo, C.; Pepe, G. P.; Maritato, L.; Innocenti, G.; Perlo, P.

    2006-06-01

    The critical Josephson current (IC) in superconducting/ferromagnetic (S/F) multilayer-based junctions can be controlled by changing the relative directions of the magnetization in the F-layers. Recent experimental works [1, 2] show that an enhancement of IC is achieved in S/F weak links when the alternating F-layers are antiparallel aligned. We present preliminary experimental results concerning the dependence of IC on the relative orientation of the ferromagnetic layers in S/F1/I/F2/S tunnel junctions where the F-layers are obtained by changing the relative composition of NiCu alloys. The multilayers were grown by electron beam deposition, and processed by Focused Ion Beam lithography. The magnetic state of the devices was directly determined by measuring the current perpendicular to plane (CPP) magnetoresistance (MR) at high bias. IC was found to be larger when the F-layers are antiparallel aligned. The maximum change of IC corresponds to the maximum change of MR. The application of a magnetic field induces a transition in the shape of the currentvoltage curve that seems to suggest Coulomb blockade effect.

  18. Solvent-resistant photocurable liquid fluoropolymers for microfluidic device fabrication [corrected].

    Science.gov (United States)

    Rolland, Jason P; Van Dam, R Michael; Schorzman, Derek A; Quake, Stephen R; DeSimone, Joseph M

    2004-03-01

    We report the first fabrication of a solvent-compatible microfluidic device based on photocurable "Liquid Teflon" materials. The materials are highly fluorinated functionalized perfluoropolyethers (PFPEs) that have liquidlike viscosities that can be cured into tough, highly durable elastomers that exhibit the remarkable chemical resistance of fluoropolymers such as Teflon. Poly(dimethylsiloxane) (PDMS) elastomers have rapidly become the material of choice for many recent microfluidic device applications. Despite the advantages of PDMS in relation to microfluidics technology, the material suffers from a serious drawback in that it swells in most organic solvents. The swelling of PDMS-based devices in organic solvents greatly disrupts the micrometer-sized features and makes it impossible for fluids to flow inside the channels. Our approach to this problem has been to replace PDMS with photocurable perfluoropolyethers. Device fabrication and valve actuation were accomplished using established procedures for PDMS devices. The additional advantage of photocuring allows fabrication time to be decreased from several hours to a matter of minutes. The PFPE-based device exhibited mechanical properties similar to those of Sylgard 184 before and after curing as well as remarkable resistance to organic solvents. This work has the potential to expand the field of microfluidics to many novel applications.

  19. Fabrication of Polymerase Chain Reaction Plastic Lab-on-a-Chip Device for Rapid Molecular Diagnoses.

    Science.gov (United States)

    Trinh, Kieu The Loan; Zhang, Hainan; Kang, Dong-Jin; Kahng, Sung-Hyun; Tall, Ben D; Lee, Nae Yoon

    2016-05-01

    We aim to fabricate a thermoplastic poly(methylmethacrylate) (PMMA) Lab-on-a-Chip device to perform continuous- flow polymerase chain reactions (PCRs) for rapid molecular detection of foodborne pathogen bacteria. A miniaturized plastic device was fabricated by utilizing PMMA substrates mediated by poly(dimethylsiloxane) interfacial coating, enabling bonding under mild conditions, and thus avoiding the deformation or collapse of microchannels. Surface characterizations were carried out and bond strength was measured. The feasibility of the Lab-on-a-Chip device for performing on-chip PCR utilizing a lab-made, portable dual heater was evaluated. The results were compared with those obtained using a commercially available thermal cycler. A PMMA Lab-on-a-Chip device was designed and fabricated for conducting PCR using foodborne pathogens as sample targets. A robust bond was established between the PMMA substrates, which is essential for performing miniaturized PCR on plastic. The feasibility of on-chip PCR was evaluated using Escherichia coli O157:H7 and Cronobacter condimenti, two worldwide foodborne pathogens, and the target amplicons were successfully amplified within 25 minutes. In this study, we present a novel design of a low-cost and high-throughput thermoplastic PMMA Lab-on-a-Chip device for conducting microscale PCR, and we enable rapid molecular diagnoses of two important foodborne pathogens in minute resolution using this device. In this regard, the introduced highly portable system design has the potential to enable PCR investigations of many diseases quickly and accurately.

  20. Integration of Multiple Components in Polystyrene-based Microfluidic Devices Part 1: Fabrication and Characterization

    Science.gov (United States)

    Johnson, Alicia S.; Anderson, Kari B.; Halpin, Stephen T.; Kirkpatrick, Douglas C.; Spence, Dana M.; Martin, R. Scott

    2012-01-01

    In Part I of a two-part series, we describe a simple, and inexpensive approach to fabricate polystyrene devices that is based upon melting polystyrene (from either a Petri dish or powder form) against PDMS molds or around electrode materials. The ability to incorporate microchannels in polystyrene and integrate the resulting device with standard laboratory equipment such as an optical plate reader for analyte readout and micropipettors for fluid propulsion is first described. A simple approach for sample and reagent delivery to the device channels using a standard, multi-channel micropipette and a PDMS-based injection block is detailed. Integration of the microfluidic device with these off-chip functions (sample delivery and readout) enables high throughput screens and analyses. An approach to fabricate polystyrene-based devices with embedded electrodes is also demonstrated, thereby enabling the integration of microchip electrophoresis with electrochemical detection through the use of a palladium electrode (for a decoupler) and carbon-fiber bundle (for detection). The device was sealed against a PDMS-based microchannel and used for the electrophoretic separation and amperometric detection of dopamine, epinephrine, catechol, and 3,4-dihydroxyphenylacetic acid. Finally, these devices were compared against PDMS-based microchips in terms of their optical transparency and absorption of an anti-platelet drug, clopidogrel. Part I of this series lays the foundation for Part II, where these devices were utilized for various on-chip cellular analysis. PMID:23120747

  1. In Situ Fabrication of ZnS Semiconductor Nanoparticles in Layered Organic-inorganic Solid Template

    Institute of Scientific and Technical Information of China (English)

    Bao Lin ZHU; Xiao CHEN; Zhen Ming SUI; Li Mei XU; Chun Jie YANG; Ji Kuan ZHAO; Jie LIU

    2004-01-01

    Ordered ZnS semiconductor nanoparticles were in situ synthesized in metal halide perovskite organic/inorganic layered hybrids (CnH2n+1NH3)2ZnCl4 (n=10 and 12) by reaction of their spin-casting films with H2S gas. Transmission electron microscopy, UV-vis spectroscopy and small-angle X-ray diffraction were used to characterize the morphology and the structure of formed nanoparticles. Obtained results indicate an effective way to incorporate functional inorganic nanoparticles into structured organic matrices.

  2. A THz semiconductor hybrid plasmonic waveguide with fabrication-error tolerance

    Science.gov (United States)

    Eldlio, Mohamed; Ma, Youqiao; Che, Franklin; Maeda, Hiroshi; Cada, Michael

    2017-01-01

    In this letter, a novel waveguide based on semiconductor THz hybrid surface plasmon polariton (STHSPP) is proposed and numerically analyzed. The structure under study can confine light in the ultradeep-subwavelength region (ranging from λ2/360 to λ2/156) with a large propagation length ranging from 374 to 506 µm. Compared with a conventional hybrid SPP (HSPP) waveguide without a ridge, our proposed structure with the same propagation length has a much higher mode confinement with a one order of magnitude smaller normalized mode area.

  3. Matrix-dependent Strain Distributions of Au and Ag Nanoparticles in a Metal-oxide-semiconductor-based Nonvolatile Memory Device

    OpenAIRE

    Honghua Huang; Ying Zhang; Wenyan Wei; Ting Yu; Xingfang Luo; Cailei Yuan

    2015-01-01

    The matrix-dependent strain distributions of Au and Ag nanoparticles in a metal-oxide-semiconductor based nonvolatile memory device are investigated by finite element calculations. The simulation results clearly indicate that both Au and Ag nanoparticles incur compressive strain by high-k Al2O3 and conventional SiO2 dielectrics. The strain distribution of nanoparticles is closely related to the surrounding matrix. Nanoparticles embedded in different matrices experience different compressive s...

  4. IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

    Institute of Scientific and Technical Information of China (English)

    陈蔚

    2003-01-01

    The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density.The electric potential equation is discretized by a mixed finite element method.The electron and hole density equations are treated by implicit-explicit multistep finite element methods.The schemes are very efficient.The optimal order error estimates both in time and space are derived.

  5. Research progress of high mobility germanium based metal oxide semiconductor devices%高迁移率 Ge沟道器件研究进展∗

    Institute of Scientific and Technical Information of China (English)

    安霞; 黄如; 李志强; 云全新; 林猛; 郭岳; 刘朋强; 黎明; 张兴

    2015-01-01

    Germanium based metal oxide semiconductor (MOS) device has been a research hotspot and considered as a po-tential candidate for future complementary MOS (CMOS) technology due to its high and symmetric carrier mobility. However, the poor quality of gate dielectric/channel interface significantly restricts the performance of germanium based MOS devices. Besides, the solid-solubility and activation concentration of dopants in Ge are both quite low, and the dopants diffuse fast in Ge, which makes it difficult to achieve ultra-shallow junction with high dopant concentration, especially for Ge NMOS devices. To solve these problems, different techniques are proposed and overviewed. The proposed nitrogen-plasma-passivation method can effectively suppress the regrowth of germanium sub-oxide and reduce the interface state density. Thus the performance of the fabricated Ge NMOS device is significantly improved. To enhance the n-type dopant ac-tivation in Ge, the multiple implantation technique and the multiple annealing technique are proposed. High electrical activation over 1 × 1020 cm−3 is achieved, and the corresponding contact resistivity is reduced to 3.8 × 10−7 Ω·cm2. Besides, the implantation after germanide (IAG) technique is first proposed to modulate the Schottky barrier height (SBH). The record-low electron SBH of 0.10 eV is obtained by IAG technique, and the optimized process window is given. In addition, the poor thermal stability of NiGe restricts the further improvement of performance of Ge MOS device. P and Sb co-implantation technique and novel ammonium fluoride pretreatment method are proposed to improve the thermal stability of NiGe. The electrical characteristic of NiGe/Ge diode is also improved simultaneously. The results provide the guidelines for further enhancing the performances of germanium-based MOS devices.

  6. Investigation of Surface Breakdown on Semiconductor Devices Using Optical Probing Techniques.

    Science.gov (United States)

    1990-01-01

    18] L. Bovino , T. Burke, R. Youmans, M. Weiner, and J. Car, r, "Recent Advances in Optically C’ntrolled Bulk Semiconductor Switches," Digest of...Comp. Simul. 5 (3), 175 (1988). [321 M. Weiner, L. Bovino , R. Youmans, and T. Burke, "Modeling of the Optically Conrolled Semiconductor Switch," J

  7. Fabrication of nanogradient coatings for laser devices using the method of magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Abramov, N F; Volpyan, O D; Obod, Yu A [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation); Dronskii, R V [' Fotron-Auto' Scientific Manufacture Enterprise, Moscow (Russian Federation)

    2013-09-30

    Significant advantages of the magnetron sputtering method for producing complex high-quality optical coatings for laser devices are shown. Technology aspects of efficient fabrication of such coatings are considered. The capabilities of the developed automated technological and control equipment are described. (nanogradient dielectric coatings and metamaterials)

  8. Fused Deposition Modeling 3D Printing for (Bio)analytical Device Fabrication : Procedures, Materials, and Applications

    NARCIS (Netherlands)

    Salentijn, Gert Ij; Oomen, Pieter E; Grajewski, Maciej; Verpoorte, Elisabeth

    2017-01-01

    In this work, the use of fused deposition modeling (FDM) in a (bio)analytical/lab-on-a-chip research laboratory is described. First, the specifications of this 3D printing method that are important for the fabrication of (micro)devices were characterized for a benchtop FDM 3D printer. These include

  9. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Energy Technology Data Exchange (ETDEWEB)

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2017-04-04

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  10. Electronic interconnects and devices with topological surface states and methods for fabricating same

    Energy Technology Data Exchange (ETDEWEB)

    Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

    2016-05-03

    An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

  11. Surface treatment of flow channels in microfluidic devices fabricated by stereolithography.

    Science.gov (United States)

    Ohtani, Kanako; Tsuchiya, Masaki; Sugiyama, Hitomi; Katakura, Toru; Hayakawa, Masatoshi; Kanai, Toshimitsu

    2014-01-01

    A microfluidic device with three-dimensional flow channels was fabricated by stereolithography, and hydrophilic surface treatment of the flow channel was performed by coating the wall of the channel with a silica layer. After the treatment, the device produced monodisperse oil-in-water (O/W) emulsions. The silica layer on the channel surface was then coated with a fluorinated silane coupling agent to make it hydrophobic, thus enabling the treated device to produce monodisperse inverted water-in-oil (W/O) emulsions.

  12. Applications of Secondary Electron Composition Contrast Imaging Method in Microstructure Studies on Heterojunction Semiconductor Devices and Multilayer Materials

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    The principle, imaging condition and experimental method for obtaining high resolution composition contrast in secondary electron image were described. A new technique of specimen preparation for secondary electron composition contrast observation was introduced and discussed. By using multilayer P+-Si1-xGex/p-Si heterojunction internal photoemission infrared detector as an example, the applications of secondary electron composition contrast imaging in microstructure studies on heterojunction semiconducting materials and devices were stated. The characteristics of the image were compared with the ordinary transmission electron diffraction contrast image. The prospects of applications of the imaging method in heterojunction semiconductor devices and multilayer materials are also discussed.

  13. Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

    Science.gov (United States)

    Norman, Andrew

    2016-08-23

    A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

  14. Fabrication and characterization of PbSe nanostructures on van der Waals surfaces of GaSe layered semiconductor crystals

    Science.gov (United States)

    Kudrynskyi, Z. R.; Bakhtinov, A. P.; Vodopyanov, V. N.; Kovalyuk, Z. D.; Tovarnitskii, M. V.; Lytvyn, O. S.

    2015-11-01

    The growth morphology, composition and structure of PbSe nanostructures grown on the atomically smooth, clean, nanoporous and oxidized van der Waals (0001) surfaces of GaSe layered crystals were studied by means of atomic force microscopy, x-ray diffractometry, photoelectron spectroscopy and Raman spectroscopy. Semiconductor heterostructures were grown by the hot-wall technique in vacuum. Nanoporous GaSe substrates were fabricated by the thermal annealing of layered crystals in a molecular hydrogen atmosphere. The irradiation of the GaSe(0001) surface by UV radiation was used to fabricate thin Ga2O3 layers with thickness clusters with a square or rectangular symmetry on the clean low-energy (0001) GaSe surface, and (001)-oriented growth of PbSe thin films takes place on this surface. Using this growth technique it is possible to grow PbSe nanostructures with different morphologies: continuous epitaxial layers with thickness quantum dots with a high lateral density (more than 1011 cm-2) on the oxidized van der Waals (0001) surfaces and faceted square pillar-like nanostructures with a low lateral density (˜108 cm-2) on the nanoporous GaSe substrates. We exploit the ‘vapor-liquid-solid’ growth with low-melting metal (Ga) catalyst of PbSe crystalline branched nanostructures via a surface-defect-assisted mechanism.

  15. Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M.; Gessert, T. A.

    2012-06-01

    Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-performance superstrate devices ({approx}17%) because of significantly lower open-circuit voltage (Voc) and fill factor (FF). In our recent device development efforts, we have found that processing parameters required to fabricate high-efficiency substrate CdTe PV devices differ from those necessary for traditional superstrate CdTe devices. Here, we investigate how oxygen incorporation in the CdTe deposition, CdCl2 heat treatment, CdS deposition, and post-deposition heat treatment affect device characteristics through their effects on the junction. By adjusting whether oxygen is incorporated during these processing steps, we have achieved Voc values greater than 860 mV and efficiencies greater than 10%.

  16. Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates

    Directory of Open Access Journals (Sweden)

    C.K. Sumesh

    2011-01-01

    Full Text Available Metal-semiconductor field-effect transistors (MESFETs based on DVT grown MoSe2 crystals and Cu Schottky gate have been fabricated and studied. When Schottky gate voltage (Vgs changes from 0 to 10 V, the source-drain current (Ids increases exponentially with Vgs and the conductance shows a drastic increase with positive Vgs. The fabricated n-MoSe2 MESFET have a saturated current level of about 100 mA and maximum transconductance of about 53 mA/V. Their results suggest a way of fabricating MESFETs from layered metal dichalcogenide semiconducting materials.

  17. Design and fabrication of a MEMS Lamb wave device based on ZnO thin film*

    Institute of Scientific and Technical Information of China (English)

    Liu Mengwei; Li Junhong; Ma Jun; Wang Chenghao

    2011-01-01

    This paper presents the design and fabrication of a Lamb wave device based on ZnO piezoelectric film.The Lamb waves were respectively launched and received by both Al interdigital transducers. In order to reduce the stress of the thin membrane, the ZnO/A1/LTO/Si3N4/Si multilayered thin plate was designed and fabricated. A novel method to obtain the piezoelectric constant of the ZnO film was used. The experimental results for characterizing the wave propagation modes and their frequencies of the Lamb wave device indicated that the measured center frequency of antisymmetric A0 and symmetric S0 modes Lamb wave agree with the theoretical predictions. The mass sensitivity of the MEMS Lamb wave device was also characterized for gravimetric sensing application.

  18. Effect of Electric Field and Polarity on Light Emission in Metal-Insulator-Semiconductor Structure Thin-Film Electroluminescent Devices

    Science.gov (United States)

    Ohwaki, Jun-ichi; Kozawaguchi, Haruki; Tsujiyama, Bunjiro

    1983-01-01

    Changes in the emission intensities and spectra with applied electric fields in Metal-Insulator-Semiconductor (MIS) structure thin-film electroluminescent (TFEL) devices have been investigated using devices with stacked emitting layer structures, such as ITO/ZnS: Mn/ZnS: Tb/Sm2O3/Al. In MIS-TFEL devices, the emission distribution in the direction of the ZnS film thickness is nonhomogeneous. In particular, the emission intensity in the region near the ZnS-insulator interface increases with increasing applied voltage more than in the other region in the ZnS layer, when electrons exciting emission centers are accelerated from the insulator side. On the other hand, the emission is homogeneous at the opposite polarity. It is found that the emission color for stacked emitting layer MIS-TFEL devices can be modulated by changing the applied voltage.

  19. Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires.

    Science.gov (United States)

    Zhang, Jun; Zhang, Lide; Jiang, Feihong; Yang, Yongdong; Li, Jianping

    2005-01-13

    Quasi one-dimensional GaN-SiO(2) nanostructures, with a silicon oxide layer coated on semiconductor GaN nanowires, were successfully synthesized through as-synthesized SiO(2) nanoparticles-assisted reaction. The experimental results indicate that the nanostructure consists of single-crystalline wurtzite GaN nanowire core, an amorphous SiO(2) outer shell separated in the radial direction. These quasi one-dimensional nanowires have the diameters of a few tens of nanometers and lengths up to several hundreds of micrometers. The photoluminescence spectrum of the GaN-SiO(2) nanostructures consists of one broad blue-light emission peak at 480 nm and another weak UV emission peak at 345 nm. The novel method, which may results in high yield and high reproducibility, is demonstrated to be a unique technique for producing nanostructures with controlled morphology.

  20. PopupCAD: a tool for automated design, fabrication, and analysis of laminate devices

    Science.gov (United States)

    Aukes, Daniel M.; Wood, Robert J.

    2015-05-01

    Recent advances in laminate manufacturing techniques have driven the development of new classes of millimeter-scale sensorized medical devices, robots capable of terrestrial locomotion and sustained flight, and new techniques for sensing and actuation. Recently, the analysis of laminate micro-devices has focused more manufacturability concerns and not on mechanics. Considering the nature of such devices, we draw from existing research in composites, origami kinematics, and finite element methods in order to identify issues related to sequential assembly and self-folding prior to fabrication as well as the stiffness of composite folded systems during operation. These techniques can be useful for understanding how such devices will bend and flex under normal operating conditions, and when added to new design tools like popupCAD, will give designers another means to develop better devices throughout the design process.

  1. Design and Fabrication of Acoustic Wave Actuated Microgenerator for Portable Electronic Devices

    CERN Document Server

    Lai, Tenghsien; Tsou, Chingfu

    2008-01-01

    The past few years have seen an increasing focus on energy harvesting issue, including power supply for portable electric devices. Utilize scavenging ambient energy from the environment could eliminate the need for batteries and increase portable device lifetimes indefinitely. In addition, through MEMS technology fabricated micro-generator could easy integrate with these small or portable devices. Several different ambient sources, including solar, vibration and temperature effect, have already exploited [1-3]. Each energy source should be used in suitable environment, therefore to produce maximum efficiency. In this paper, we present an acoustic wave actuated micro-generator for power system by using the energy of acoustic waves, such as the sound from human voices or speakerphone, to actuate a MEMS-type electromagnetic transducer. This provides a longer device lifetime and greater power system convenience. Moreover, it is convenient to integrate MEMS-based microgenerators with small or porta le devices

  2. Three-dimensional photonic devices fabricated by ultrafast lasers for optical sensing in lab-on-a-chip

    NARCIS (Netherlands)

    Martínez Vázquez, R.; Osellame, R.; Crespi, A.; Dongre, C.; Hoekstra, H.J.W.M.; Pollnau, M.; Vlekkert, van den H.; Weeghel, van R.; Watts, P.; Ramponi, R.; Cerullo, G.; Neev, Joseph; Nolte, Stefan; Heisterkamp, Alexander; Trebino, Rick P.

    2009-01-01

    We report on the use of femtosecond laser pulses to fabricate photonic devices (waveguides and interferometers) inside commercial CE chips without affecting the manufacturing procedure of the microfluidic part of the device. The fabrication of single waveguides intersecting the channels allows one t

  3. Fabrication of multianalyte CeO2 nanograin electrolyte–insulator–semiconductor biosensors by using CF4 plasma treatment

    Directory of Open Access Journals (Sweden)

    Chyuan Haur Kao

    2015-09-01

    Full Text Available Multianalyte CeO2 biosensors have been demonstrated to detect pH, glucose, and urine concentrations. To enhance the multianalyte sensing capability of these biosensors, CF4 plasma treatment was applied to create nanograin structures on the CeO2 membrane surface and thereby increase the contact surface area. Multiple material analyses indicated that crystallization or grainization caused by the incorporation of flourine atoms during plasma treatment might be related to the formation of the nanograins. Because of the changes in surface morphology and crystalline structures, the multianalyte sensing performance was considerably enhanced. Multianalyte CeO2 nanograin electrolyte–insulator–semiconductor biosensors exhibit potential for use in future biomedical sensing device applications.

  4. Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device.

    Science.gov (United States)

    Sanctis, Shawn; Hoffmann, Rudolf C; Eiben, Sabine; Schneider, Jörg J

    2015-01-01

    Tobacco mosaic virus (TMV) has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET). A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO) nanoparticles, employing a molecular precursor. Insightful studies of the decomposition of the precursor were done using NMR spectroscopy and material characterization of the hybrid material derived from the decomposition was achieved using dynamic light scattering (DLS), transmission electron microscopy (TEM), grazing incidence X-ray diffractometry (GI-XRD) and atomic force microscopy (AFM). TEM and DLS data confirm the formation of crystalline ZnO nanoparticles tethered on top of the virus template. GI-XRD investigations exhibit an orientated nature of the deposited ZnO film along the c-axis. FET devices fabricated using the zinc oxide mineralized virus template material demonstrates an operational transistor performance which was achieved without any high-temperature post-processing steps. Moreover, a further improvement in FET performance was observed by adjusting an optimal layer thickness of the deposited ZnO on top of the TMV. Such a bio-inorganic nanocomposite semiconductor material accessible using a mild and straightforward microwave processing technique could open up new future avenues within the field of bio-electronics.

  5. Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device

    Directory of Open Access Journals (Sweden)

    Shawn Sanctis

    2015-03-01

    Full Text Available Tobacco mosaic virus (TMV has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET. A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO nanoparticles, employing a molecular precursor. Insightful studies of the decomposition of the precursor were done using NMR spectroscopy and material characterization of the hybrid material derived from the decomposition was achieved using dynamic light scattering (DLS, transmission electron microscopy (TEM, grazing incidence X-ray diffractometry (GI-XRD and atomic force microscopy (AFM. TEM and DLS data confirm the formation of crystalline ZnO nanoparticles tethered on top of the virus template. GI-XRD investigations exhibit an orientated nature of the deposited ZnO film along the c-axis. FET devices fabricated using the zinc oxide mineralized virus template material demonstrates an operational transistor performance which was achieved without any high-temperature post-processing steps. Moreover, a further improvement in FET performance was observed by adjusting an optimal layer thickness of the deposited ZnO on top of the TMV. Such a bio-inorganic nanocomposite semiconductor material accessible using a mild and straightforward microwave processing technique could open up new future avenues within the field of bio-electronics.

  6. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng

    2016-06-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  7. Fabrication of a LCP-based conductivity cell and resistive temperature device via PCB MEMS technology

    Science.gov (United States)

    Broadbent, Heather A.; Ivanov, Stanislav Z.; Fries, David P.

    2007-04-01

    Printed circuit board microelectromechanical systems are a set of fabrication techniques that use traditional inexpensive printed circuit board processes to construct microsensors. These techniques keep gaining popularity and are utilized herein. The design, fabrication and construction of a miniature, low-cost conductivity cell and resistive temperature device transducers are presented. The transducers utilize a liquid crystal polymer (LCP), a thin-film material, which exhibits moisture resistant properties that makes it suitable for aquatic applications. Novel processing techniques that are reported here include the use of a direct-write photolithography tool eliminating the use of photomasks and chemical catalytic metallization of LCP material. The rapid fabrication of these devices and the repeatability of the fabrication are demonstrated by comparing the calibration of multiple devices. The sensors' sensitivities are found to be 1082.40 ± 144.18 mS cm-1 per siemens and 5.910 ± 0.765 °C per ohm for the conductivity and temperature transducers, respectively.

  8. Biomedical microfluidic devices by using low-cost fabrication techniques: A review.

    Science.gov (United States)

    Faustino, Vera; Catarino, Susana O; Lima, Rui; Minas, Graça

    2016-07-26

    One of the most popular methods to fabricate biomedical microfluidic devices is by using a soft-lithography technique. However, the fabrication of the moulds to produce microfluidic devices, such as SU-8 moulds, usually requires a cleanroom environment that can be quite costly. Therefore, many efforts have been made to develop low-cost alternatives for the fabrication of microstructures, avoiding the use of cleanroom facilities. Recently, low-cost techniques without cleanroom facilities that feature aspect ratios more than 20, for fabricating those SU-8 moulds have been gaining popularity among biomedical research community. In those techniques, Ultraviolet (UV) exposure equipment, commonly used in the Printed Circuit Board (PCB) industry, replaces the more expensive and less available Mask Aligner that has been used in the last 15 years for SU-8 patterning. Alternatively, non-lithographic low-cost techniques, due to their ability for large-scale production, have increased the interest of the industrial and research community to develop simple, rapid and low-cost microfluidic structures. These alternative techniques include Print and Peel methods (PAP), laserjet, solid ink, cutting plotters or micromilling, that use equipment available in almost all laboratories and offices. An example is the xurography technique that uses a cutting plotter machine and adhesive vinyl films to generate the master moulds to fabricate microfluidic channels. In this review, we present a selection of the most recent lithographic and non-lithographic low-cost techniques to fabricate microfluidic structures, focused on the features and limitations of each technique. Only microfabrication methods that do not require the use of cleanrooms are considered. Additionally, potential applications of these microfluidic devices in biomedical engineering are presented with some illustrative examples.

  9. Fabrication of 3D Microfluidic Devices by Thermal Bonding of Thin Poly(methyl methacrylate) Films

    KAUST Repository

    Perez, Paul

    2012-07-01

    The use of thin-film techniques for the fabrication of microfluidic devices has gained attention over the last decade, particularly for three-dimensional channel structures. The reasons for this include effective use of chip volume, mechanical flexibility, dead volume reduction, enhanced design capabilities, integration of passive elements, and scalability. Several fabrication techniques have been adapted for use on thin films: laser ablation and hot embossing are popular for channel fabrication, and lamination is widely used for channel enclosure. However, none of the previous studies have been able to achieve a strong bond that is reliable under moderate positive pressures. The present work aims to develop a thin-film process that provides design versatility, speed, channel profile homogeneity, and the reliability that others fail to achieve. The three building blocks of the proposed baseline were fifty-micron poly(methyl methacrylate) thin films as substrates, channel patterning by laser ablation, and device assembly by thermal-fusion bonding. Channel fabrication was characterized and tuned to produce the desired dimensions and surface roughness. Thermal bonding was performed using an adapted mechanical testing device and optimized to produce the maximum bonding strength without significant channel deformation. Bonding multilayered devices, incorporating conduction lines, and integrating various types of membranes as passive elements demonstrated the versatility of the process. Finally, this baseline was used to fabricate a droplet generator and a DNA detection chip based on micro-bead agglomeration. It was found that a combination of low laser power and scanning speed produced channel surfaces with better uniformity than those obtained with higher values. In addition, the implemented bonding technique provided the process with the most reliable bond strength reported, so far, for thin-film microfluidics. Overall, the present work proved to be versatile

  10. Fabrication and characterization of photovoltaic devices based on perovskite compounds with TiO2 nanoparticles

    Science.gov (United States)

    Kanayama, Masato; Oku, Takeo; Suzuki, Atsushi; Yamada, Masahiro; Fukunishi, Sakiko; Kohno, Kazufumi; Sakamoto, Hiroki

    2015-02-01

    Perovskite-type photovoltaic devices were fabricated by a spin-coating method using a mixture solution. The compact and meso-porous TiO2 of the solar cells were fabricated from TiO2 nanoparticles and sol, and the photovoltaic properties and microstructures were characterized. The conversion efficiencies were improved by the combination of TiO2 nanoparticles and sol. Current density was also improved by increasing numbers of spin-coatings of meso-porous TiO2. Thick meso-porous TiO2 layers would assist the construction of perovskite layers and block of the leak current.

  11. Method of fabricating a back-contact solar cell and device thereof

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bo; Smith, David; Cousins, Peter

    2016-08-02

    Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

  12. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

    DEFF Research Database (Denmark)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao

    2013-01-01

    material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled...

  13. Optical systems fabricated by printing-based assembly

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

    2017-03-21

    Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

  14. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

    Energy Technology Data Exchange (ETDEWEB)

    Hui, Rongqing (Lenexa, KS); Jiang,Hong-Xing (Manhattan, KS); Lin, Jing-Yu (Manhattan, KS)

    2008-03-18

    The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

  15. Fabrication and characterization of semiconductor ion traps for quantum information processing

    Science.gov (United States)

    Stick, Daniel Lynn

    The electromagnetic manipulation of isolated ions has led to many advances in atomic physics, from laser cooling to precision metrology and quantum control. As technical capability in this area has grown, so has interest in building miniature electromagnetic traps for the development of large-scale quantum information processors. This thesis will primarily focus on using microfabrication techniques to build arrays of miniature ion traps, similar to techniques used in fabricating high component density microprocessors. A specific focus will be on research using a gallium arsenide/aluminum gallium arsenide heterostructure as a trap architecture, as well as the recent testing of different ion traps fabricated at outside foundries. The construction and characterization of a conventional ceramic trap capable of shuttling an ion through a junction will also be detailed, and reveal the need for moving towards lithographically fabricated traps. Combined, these serve as a set of proof-of-principle experiments pointing to methods for designing and building large scale arrays of ion traps capable of constituting a quantum information processor. As traps become smaller, electrical potentials on the electrodes have greater influence on the ion. This not only pertains to intentionally applied voltages, but also to deleterious noise sources, such as thermal Johnson noise and the more significant "patch potential" noise, which both cause motional heating of the ion. These problematic noise sources dovetail with my thesis research into trap miniaturization since their effects become more pronounced and impossible to ignore for small trap sizes. Therefore characterizing them and investigating ways to suppress them have become an important component of my research. I will describe an experiment using a pair of movable needle electrodes to measure the ion heating rate corresponding to the harmonic frequency of the trap, the ion-electrode distance, and the electrode temperature. This

  16. A simple method of fabricating mask-free microfluidic devices for biological analysis.

    KAUST Repository

    Yi, Xin

    2010-09-07

    We report a simple, low-cost, rapid, and mask-free method to fabricate two-dimensional (2D) and three-dimensional (3D) microfluidic chip for biological analysis researches. In this fabrication process, a laser system is used to cut through paper to form intricate patterns and differently configured channels for specific purposes. Bonded with cyanoacrylate-based resin, the prepared paper sheet is sandwiched between glass slides (hydrophilic) or polymer-based plates (hydrophobic) to obtain a multilayer structure. In order to examine the chip\\'s biocompatibility and applicability, protein concentration was measured while DNA capillary electrophoresis was carried out, and both of them show positive results. With the utilization of direct laser cutting and one-step gas-sacrificing techniques, the whole fabrication processes for complicated 2D and 3D microfluidic devices are shorten into several minutes which make it a good alternative of poly(dimethylsiloxane) microfluidic chips used in biological analysis researches.

  17. A miniature rigid/flex salinity measurement device fabricated using printed circuit processing techniques

    Science.gov (United States)

    Broadbent, H. A.; Ketterl, T. P.; Reid, C. S.

    2010-08-01

    The design, fabrication and initial performance of a single substrate, miniature, low-cost conductivity, temperature, depth (CTD) sensor board with interconnects are presented. In combination these sensors measure ocean salinity. The miniature CTD device board was designed and fabricated as the main component of a 50 mm × 25 mm × 25 mm animal-attached biologger. The board was fabricated using printed circuit processes and consists of two distinct regions on a continuous single liquid crystal polymer substrate: an 18 mm × 28 mm rigid multi-metal sensor section and a 72 mm long flexible interconnect section. The 95% confidence intervals for the conductivity, temperature and pressure sensors were demonstrated to be ±0.083 mS cm-1, 0.01 °C, and ±0.135 dbar, respectively.

  18. Optimized fabrication protocols of microfluidic devices for X-ray analysis

    KAUST Repository

    Catalano, Rossella

    2014-07-01

    Microfluidics combined with X-ray scattering techniques allows probing conformational changes or assembly processes of biological materials. Our aim was to develop a highly X-ray transparent microfluidic cell for detecting small variations of X-ray scattering involved in such processes. We describe the fabrication of a polyimide microfluidic device based on a simple, reliable and inexpensive lamination process. The implemented microstructured features result in windows with optimized X-ray transmission. The microfluidic device was characterized by X-ray microbeam scattering at the ID13 beamline of the European Synchrotron Radiation Facility. © 2014 Elsevier B.V. All rights reserved.

  19. Fabrication and characterization of perovskite photovoltaic devices with TiO2 nanoparticle layers

    Science.gov (United States)

    Oku, Takeo; Ueoka, Naoki; Suzuki, Kohei; Suzuki, Atsushi; Yamada, Masahiro; Sakamoto, Hiroki; Minami, Satoshi; Fukunishi, Sakiko; Kohno, Kazufumi; Miyauchi, Shinsuke

    2017-01-01

    TiO2/CH3NH3PbI3-based photovoltaic devices were fabricated by a spin-coating method using mixture solutions with TiO2 nanoparticles. Compact TiO2 layers were prepared from titanium diisopropoxide bis(acetyl acetonate) and TiO2 nanoparticles with different particle sizes. The performance of the photovoltaic devices was improved by sequential deposition of the TiO2 layers, which resulted in microstructural change of the perovskite layers.

  20. Systems and Methods for Fabricating Carbon Nanotube-Based Vacuum Electronic Devices

    Science.gov (United States)

    Manohara, Harish (Inventor); Toda, Risaku (Inventor); Del Castillo, Linda Y. (Inventor); Murthy, Rakesh (Inventor)

    2015-01-01

    Systems and methods in accordance with embodiments of the invention proficiently produce carbon nanotube-based vacuum electronic devices. In one embodiment a method of fabricating a carbon nanotube-based vacuum electronic device includes: growing carbon nanotubes onto a substrate to form a cathode; assembling a stack that includes the cathode, an anode, and a first layer that includes an alignment slot; disposing a microsphere partially into the alignment slot during the assembling of the stack such that the microsphere protrudes from the alignment slot and can thereby separate the first layer from an adjacent layer; and encasing the stack in a vacuum sealed container.