WorldWideScience

Sample records for fabricating amorphous silicon

  1. Fabrication and Modeling of Ambipolar Hydrogenated Amorphous Silicon Thin Film Transistors.

    Science.gov (United States)

    1986-08-01

    that over 150 die can be fabricated on a single 2in Si wafer. Individual die are 4 -- ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ - -- rM M- ri- PA NX RA "’K Kno ’--tx...Kusian, and B. Bullemer, "An Ambipolar Amorphous- Silicon Field-Effect Transistor," Siemens Forsch.-u. Entwickl.-Ber., vol. 14, no. 3, pp. 114-119...1985. 99. H. Pfleiderer, W. Kusian, and B. Bullemer, "An Ambipolar Field-Effect Transistor Model," Siemens Forsch.-u. Entwicki.-Ber., vol. 14, no. 2, pp

  2. Fabrication of amorphous micro-ring arrays in crystalline silicon using ultrashort laser pulses

    Science.gov (United States)

    Fuentes-Edfuf, Yasser; Garcia-Lechuga, Mario; Puerto, Daniel; Florian, Camilo; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2017-05-01

    We demonstrate a simple way to fabricate amorphous micro-rings in crystalline silicon using direct laser writing. This method is based on the fact that the phase of a thin surface layer can be changed into the amorphous phase by irradiation with a few ultrashort laser pulses (800 nm wavelength and 100 fs duration). Surface-depressed amorphous rings with a central crystalline disk can be fabricated without the need for beam shaping, featuring attractive optical, topographical, and electrical properties. The underlying formation mechanism and phase change pathway have been investigated by means of fs-resolved microscopy, identifying fluence-dependent melting and solidification dynamics of the material as the responsible mechanism. We demonstrate that the lateral dimensions of the rings can be scaled and that the rings can be stitched together, forming extended arrays of structures not limited to annular shapes. This technique and the resulting structures may find applications in a variety of fields such as optics, nanoelectronics, and mechatronics.

  3. Fabrication and characterization of monolithically integrated microchannel plates based on amorphous silicon.

    Science.gov (United States)

    Franco, Andrea; Geissbühler, Jonas; Wyrsch, Nicolas; Ballif, Christophe

    2014-04-04

    Microchannel plates are vacuum-based electron multipliers for particle--in particular, photon--detection, with applications ranging from image intensifiers to single-photon detectors. Their key strengths are large signal amplification, large active area, micrometric spatial resolution and picosecond temporal resolution. Here, we present the first microchannel plate made of hydrogenated amorphous silicon (a-Si:H) instead of lead glass. The breakthrough lies in the possibility of realizing amorphous silicon-based microchannel plates (AMCPs) on any kind of substrate. This achievement is based on mastering the deposition of an ultra-thick (80-120 μm) stress-controlled a-Si:H layer from the gas phase at temperatures of about 200 °C and micromachining the channels by dry etching. We fabricated AMCPs that are vertically integrated on metallic anodes of test structures, proving the feasibility of monolithic integration of, for instance, AMCPs on application-specific integrated circuits for signal processing. We show an electron multiplication factor exceeding 30 for an aspect ratio, namely channel length over aperture, of 12.5:1. This result was achieved for input photoelectron currents up to 100 pA, in the continuous illumination regime, which provides a first evidence of the a-Si:H effectiveness in replenishing the electrons dispensed in the multiplication process.

  4. Laser fabrication of crystalline silicon nanoresonators from an amorphous film for low-loss all-dielectric nanophotonics

    CERN Document Server

    Dmitriev, P A; Milichko, V A; Mukhin, I S; Gudovskikh, A S; Sitnikova, A A; Samusev, A K; Krasnok, A E; Belov, P A

    2015-01-01

    The concept of high refractive index subwavelength dielectric nanoresonators, supporting electric and magnetic optical resonances, is a promising platform for waveguiding, sensing, and nonlinear nanophotonic devices. However, high concentration of defects in the nanoresonators diminishes their resonant properties, which are crucially dependent on their internal losses. Therefore, it seems to be inevitable to use initially crystalline materials for fabrication of the nanoresonators. Here, we show that the fabrication of crystalline (low-loss) resonant silicon nanoparticles by femtosecond laser ablation of amorphous (high-loss) silicon thin films is possible. We apply two conceptually different approaches: recently proposed laser-induced transfer and a novel laser writing technique for large-scale fabrication of the crystalline nanoparticles. The crystallinity of the fabricated nanoparticles is proven by Raman spectroscopy and electron transmission microscopy, whereas optical resonant properties of the nanopart...

  5. Laser fabrication of crystalline silicon nanoresonators from an amorphous film for low-loss all-dielectric nanophotonics

    Science.gov (United States)

    Dmitriev, P. A.; Makarov, S. V.; Milichko, V. A.; Mukhin, I. S.; Gudovskikh, A. S.; Sitnikova, A. A.; Samusev, A. K.; Krasnok, A. E.; Belov, P. A.

    2016-02-01

    The concept of high refractive index subwavelength dielectric nanoresonators, supporting electric and magnetic optical resonance, is a promising platform for waveguiding, sensing, and nonlinear nanophotonic devices. However, high concentration of defects in the nanoresonators diminishes their resonant properties, which are crucially dependent on their internal losses. Therefore, it seems to be inevitable to use initially crystalline materials for fabrication of the nanoresonators. Here, we show that the fabrication of crystalline (low-loss) resonant silicon nanoparticles by femtosecond laser ablation of amorphous (high-loss) silicon thin films is possible. We apply two conceptually different approaches: recently proposed laser-induced transfer and a novel laser writing technique for large-scale fabrication of the crystalline nanoparticles. The crystallinity of the fabricated nanoparticles is proven by Raman spectroscopy and electron transmission microscopy, whereas optical resonant properties of the nanoparticles are studied using dark-field optical spectroscopy and full-wave electromagnetic simulations.

  6. Fabrication of hydrogenated amorphous silicon carbide films by decomposition of hexamethyldisilane with microwave discharge flow of Ar

    Science.gov (United States)

    Ito, Haruhiko; Kumakura, Motoki; Suzuki, Tsuneo; Niibe, Masahito; Kanda, Kazuhiro; Saitoh, Hidetoshi

    2016-06-01

    Hydrogenated amorphous silicon carbide films have been fabricated by the decomposition of hexamethyldisilane with a microwave discharge flow of Ar. Mechanically hard films were obtained by applying radio-frequency (RF) bias voltages to the substrate. The atomic compositions of the films were analyzed by a combination of Rutherford backscattering and elastic recoil detection, X-ray photoelectron spectroscopy (XPS), and glow discharge optical emission spectroscopy. The chemical structure was analyzed by carbon-K near-edge X-ray absorption fine structure spectroscopy, high-resolution XPS, and Fourier transform infrared absorption spectroscopy. The structural changes upon the application of RF bias were investigated, and the concentration of O atoms near the film surface was found to play a key role in the mechanical hardness of the present films.

  7. RF power control for fabricating amorphous silicon nitride without Si-nanocrystals and its effect on defects and luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Seunghun [Department of Physics, University of Seoul, Seoul 130-743 (Korea, Republic of); Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Han, Moonsup, E-mail: mhan@uos.ac.kr [Department of Physics, University of Seoul, Seoul 130-743 (Korea, Republic of)

    2014-11-25

    Highlights: • We fabricated a-SiN{sub x} without Si-nanocrystals by using PECVD. • We investigated comprehensively the defects in a-SiN{sub x} and the relation between their defects and PL by providing energy-level diagram. • We succeeded to tune efficiently the whole range of visible luminescence with one system based material. • We conclude that RF power-control provides an efficient way to tune the color. - Abstract: We studied defect and luminescence properties of amorphous silicon nitride (a-SiN{sub x}) without silicon nanocrystals (Si-NC) fabricated by plasma-enhanced chemical vapor deposition under a controlled radio-frequency (RF) power with subsequent post-annealing. The photoluminescence (PL) intensity became stronger and the central PL peak position shifted from 2.85 eV to 1.35 eV as the applied RF power decreased from 100 W to 60 W. Through the analyses of the PL and the photoluminescence excitation (PLE) spectra we classified different kinds of defect states that each sample contains. On the basis of a further analysis of the chemical states of the Si 2p and the N 1s core-levels by X-ray photoelectron spectroscopy, we discuss the reason that the 60 W sample contains more defect states than other samples and clarify the origin of the strong luminescence observed in the 60 W sample without Si-NC fabricated at relatively low RF power. In addition, this work shows also that the RF power control could provide an efficient way to select a color or all colors for the display devices by tuning the various kinds of defects in a-SiN{sub x} thin films.

  8. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A R M Yusoff; M N Syahrul; K Henkel

    2007-08-01

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the effect of tie coats on film adhesion.

  9. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu; Holman, Zachary C. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States)

    2015-08-14

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  10. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  11. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  12. Amorphous silicon carbonitride diaphragm for environmental-cell transmission electron microscope fabricated by low-energy ion beam induced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Matsutani, Takaomi, E-mail: matutani@ele.kindai.ac.jp [Kindai University, 3-4-1 Kowakae, Higashi-osaka, Osaka 577-8502 (Japan); Yamasaki, Kayo [Kindai University, 3-4-1 Kowakae, Higashi-osaka, Osaka 577-8502 (Japan); Imaeda, Norihiro; Kawasaki, Tadahiro [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-12-15

    An amorphous silicon carbonitride (a-SiCN) diaphragm for an environmental-cell transmission electron microscope (E-TEM) was fabricated by low-energy ion beam induced chemical vapor deposition (LEIBICVD) with hexamethyldisilazane (HMDSN). The films were prepared by using gaseous HMDSN and N{sub 2}{sup +} ions with energies ranging from 300 to 600 eV. The diaphragms were applied to Si (1 0 0) and a Cu grid with 100-μm-diameter holes. With increasing ion energy, these diaphragms became perfectly smooth surfaces (RMS = 0.43 nm at 600 eV), as confirmed by atomic force microscopy and TEM. The diaphragms were amorphous and transparent to 200 kV electrons, and no charge-up was observed. Fourier transform infrared spectra and X-ray photoelectron spectra revealed that the elimination of organic compounds and formation of Si–N and C–N bonds can be promoted in diaphragms by increasing the ion impact energy. The resistance to electron beams and reaction gases in the E-cell was improved when the diaphragm was formed with high ion energy.

  13. Amorphous molybdenum silicon superconducting thin films

    Directory of Open Access Journals (Sweden)

    D. Bosworth

    2015-08-01

    Full Text Available Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using WxSi1−x, though other amorphous superconductors such as molybdenum silicide (MoxSi1−x offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc reaches a maximum of 7.6 K at a composition of Mo83Si17. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz, there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  14. The potential for the fabrication of wires embedded in the crystalline silicon substrate using the solid phase segregation of gold in crystallising amorphous volumes

    Energy Technology Data Exchange (ETDEWEB)

    Liu, A.C.Y.; McCallum, J.C

    2004-05-15

    The refinement of gold in crystallising amorphous silicon volumes was tested as a means of creating a conducting element embedded in the crystalline matrix. Amorphous silicon volumes were created by self-ion-implantation through a mask. Five hundred kiloelectronvolt Au{sup +} was then implanted into the volumes. The amorphous volumes were crystallised on a hot stage in air, and the crystallisation was characterised using cross sectional transmission electron microscopy. It was found that the amorphous silicon volumes crystallised via solid phase epitaxy at all the lateral and vertical interfaces. The interplay of the effects of the gold and also the hydrogen that infilitrated from the surface oxide resulted in a plug of amorphous material at the surface. Further annealing at this temperature demonstrated that the gold, once it had reached a certain critical concentration nucleated poly-crystalline growth instead of solid phase epitaxy. Time resolved reflectivity and Rutherford backscattering and channeling measurements were performed on large area samples that had been subject to the same implantation regime to investigate this system further. It was discovered that the crystallisation dynamics and zone refinement of the gold were complicated functions of both gold concentration and temperature. These findings do not encourage the use of this method to obtain conducting elements embedded in the crystalline silicon substrate.

  15. Tritiated amorphous silicon for micropower applications

    Energy Technology Data Exchange (ETDEWEB)

    Kherani, N.P. [Ontario Hydro Technologies, Toronto, Ontario (Canada)]|[Univ. of Toronto, Ontario (Canada); Kosteski, T.; Zukotynski, S. [Univ. of Toronto, Ontario (Canada); Shmayda, W.T. [Ontario Hydro Technologies, Toronto, Ontario (Canada)

    1995-10-01

    The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for radioluminescent structures and betavoltaic devices is presented. Theoretical analysis of the betavoltaic application shows an overall efficiency of 18% for tritiated amorphous silicon. This is equivalent to a 330 Ci intrinsic betavoltaic device producing 1 mW of power for 12 years. Photoluminescence studies of hydrogenated amorphous silicon, a-Si:H, show emission in the infra-red with a maximum quantum efficiency of 7.2% at 50 K; this value drops by 3 orders of magnitude at a temperature of 300 K. Similar studies of hydrogenated amorphous carbon show emission in the visible with an estimated quantum efficiency of 1% at 300 K. These results suggest that tritiated amorphous carbon may be the more promising candidate for room temperature radioluminescence in the visible. 18 refs., 5 figs.

  16. Raman Amplifier Based on Amorphous Silicon Nanoparticles

    Directory of Open Access Journals (Sweden)

    M. A. Ferrara

    2012-01-01

    Full Text Available The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.

  17. Solution-processed amorphous silicon surface passivation layers

    Energy Technology Data Exchange (ETDEWEB)

    Mews, Mathias, E-mail: mathias.mews@helmholtz-berlin.de; Sontheimer, Tobias; Korte, Lars; Rech, Bernd [Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics, Kekuléstraße 5, D-12489 Berlin (Germany); Mader, Christoph; Traut, Stephan; Wunnicke, Odo [Evonik Industries AG, Creavis Technologies and Innovation, Paul-Baumann-Straße 1, D-45772 Marl (Germany)

    2014-09-22

    Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37 ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724 mV was achieved, demonstrating excellent silicon surface passivation.

  18. Electron energy-loss spectroscopy study of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Burnham, N.A.; Fisher, R.F.; Asher, S.E.; Kazmerski, L.L.

    1987-07-01

    Electron energy-loss spectroscopy is used to study hydrogenated amorphous silicon (a-Si:H). Core-level and plasma excitations were examined as a function of hydrogen content. This technique and its interpretation reveals a consistent picture of the electron excitations within this important material. The a-Si:H thin films were fabricated by rf sputtering. Their hydrogen concentrations ranged from 0% to 15%. Hydrogen content was determined by infrared spectroscopy and secondary ion mass spectroscopy. X-ray photoelectron spectroscopy and inspection of the silicon Auger-KLL peak confirmed the silicon core levels.

  19. Silicon heterojunction solar cell and crystallization of amorphous silicon

    Science.gov (United States)

    Lu, Meijun

    The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (˜100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells. Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers. Another trend for solar cell industry is thin film solar cells, since they use less materials resulting in lower cost. Polycrystalline silicon (poly-Si) is one promising thin-film material. It has the potential advantages to not only retain the performance and stability of c

  20. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  1. Towards upconversion for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    de Wild, J.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Meijerink, A. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Condensed Matter and Interfaces, P.O. Box 80000, 3508 TA Utrecht (Netherlands); van Sark, W.G.J.H.M. [Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands)

    2010-11-15

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR-vis upconverter {beta}-NaYF{sub 4}:Yb{sup 3+}(18%) Er{sup 3+}(2%) at the back of an amorphous silicon solar cell in combination with a white back reflector and its response to infrared irradiation. Current-voltage measurements and spectral response measurements were done on experimental solar cells. An enhancement of 10 {mu}A/cm{sup 2} was measured under illumination with a 980 nm diode laser (10 mW). A part of this was due to defect absorption in localized states of the amorphous silicon. (author)

  2. Formation of iron disilicide on amorphous silicon

    Science.gov (United States)

    Erlesand, U.; Östling, M.; Bodén, K.

    1991-11-01

    Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

  3. Neutron irradiation induced amorphization of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Hay, J.C. [Oak Ridge National Lab., TN (United States)

    1998-09-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 {times} 10{sup 25} n/m{sup 2}. Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density ({minus}10.8%), elastic modulus as measured using a nanoindentation technique ({minus}45%), hardness as measured by nanoindentation ({minus}45%), and standard Vickers hardness ({minus}24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C.

  4. Amorphous Silicon 16—bit Array Photodetector①

    Institute of Scientific and Technical Information of China (English)

    ZHANGShaoqiang; XUZhongyang; 等

    1997-01-01

    An amorphous silicon 16-bit array photodetector with the a-SiC/a-Si heterojunction diode is presented.The fabrication processes of the device were studied systematically.By the optimum of the diode structure and the preparation procedures,the diode with Id<10-12A/mm2 and photocurrentIp≥0.35A/W has been obtained at the wavelength of 632nm.

  5. Noise and degradation of amorphous silicon devices

    NARCIS (Netherlands)

    Bakker, J.P.R.

    2003-01-01

    Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenated amorphous silicon (a-Si:H). The material is applied in sandwich structures and in thin-film transistors (TFTs). In a sandwich configuration of an intrinsic layer and two thin doped layers, the obse

  6. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addres

  7. Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Matsuki, Yasuo [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Yokkaichi Research Center, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552 (Japan); Shimoda, Tatsuya [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 (Japan)

    2012-08-31

    The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of Si-Si bonds are concluded for the pyrolysis temperature T{sub p} = 270 to 360 Degree-Sign C. The appearance of amorphous silicon phonon bands in Raman spectra for films prepared at T{sub p} {>=} 330 Degree-Sign C suggests the construction of a three-dimensional amorphous silicon network. Films prepared at T{sub p} {>=} 360 Degree-Sign C exhibit a hydrogen content near 10 at.% and an optical gap near 1.6 eV similar to device-grade vacuum processed a-Si:H. However, the infrared microstructure factor, the spin density, and the photosensitivity require significant improvements. - Highlights: Black-Right-Pointing-Pointer We fabricate hydrogenated amorphous silicon (a-Si:H) films by a solution process. Black-Right-Pointing-Pointer The a-Si:H films are prepared by pyrolytic transformation in polysilane solution. Black-Right-Pointing-Pointer We investigate basic properties in relation to the pyrolysis temperature. Black-Right-Pointing-Pointer Raman spectra, hydrogen content, and optical gap are similar to device-grade a-Si:H. Black-Right-Pointing-Pointer Microstructure factor, spin density, and photoconductivity show poor quality.

  8. The reliability and stability of multijunction amorphous silicon PV modules

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D.E. [Solarex, Newtown, PA (United States)

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  9. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  10. Hybrid photovoltaics based on semiconductor nanocrystals and amorphous silicon.

    Science.gov (United States)

    Sun, Baoquan; Findikoglu, Alp T; Sykora, Milan; Werder, Donald J; Klimov, Victor I

    2009-03-01

    Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and, perhaps, increased conversion efficiency in the ultraviolet region through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC energy states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared region. The hybrid silicon/PbS NC solar cells show external quantum efficiencies of approximately 7% at infrared energies and 50% in the visible and a power conversion efficiency of up to 0.9%. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs.

  11. Nickel-induced crystallization of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J A; Arce, R D; Buitrago, R H [INTEC (CONICET-UNL), Gueemes 3450, S3000GLN Santa Fe (Argentina); Budini, N; Rinaldi, P, E-mail: jschmidt@intec.unl.edu.a [FIQ - UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

    2009-05-01

    The nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) is used to obtain large grained polycrystalline silicon thin films on glass substrates. a-Si:H is deposited by plasma enhanced chemical vapour deposition at 200 deg. C, preparing intrinsic and slightly p-doped samples. Each sample was divided in several pieces, over which increasing Ni concentrations were sputtered. Two crystallization methods are compared, conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The crystallization was followed by optical microscopy and scanning electron microscopy observations, X-ray diffraction, and reflectance measurements in the UV region. The large grain sizes obtained - larger than 100{mu}m for the samples crystallized by CFA - are very encouraging for the preparation of low-cost thin film polycrystalline silicon solar cells.

  12. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

    Science.gov (United States)

    Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

    1987-02-01

    A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

  13. Three-Terminal Amorphous Silicon Solar Cells

    OpenAIRE

    Cheng-Hung Tai; Chu-Hsuan Lin; Chih-Ming Wang; Chun-Chieh Lin

    2011-01-01

    Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si...

  14. Studies of photodegradation in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Clare, B.W. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Cornish, J.C.L. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Hefter, G.T. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Jennings, P.J. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Lund, C.P. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Santjojo, D.J. [Murdoch Univ., WA (Australia). Sch. of Phys. Sci., Eng. and Technol.; Talukder, M.O.G. [Dept. of Applied Physics and Electronics, Rajshahi Univ. (Bangladesh)

    1996-11-15

    IR absorption spectroscopy was used to study light-induced structural changes in hydrogenated amorphous silicon (a-Si:H) films. Our results suggest that illumination causes migration of H atoms from the interior of the film towards the illuminated surface. As a consequence, a transformation occurs in the bulk of the material leading to the formation of dangling bonds in the i-layer which could act as traps for minority carriers in solar cells. Using these results, we have formulated a model for the photodegradation of a-Si:H alloys. (orig.)

  15. Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Gritsenko, V A [Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2008-07-31

    In addition to amorphous SiO{sub 2} and Si{sub 3}N{sub 4}, the two key dielectric film materials used in modern silicon devices, the fabrication technology of nonstoichiometric SiO{sub x}N{sub y}, SiN{sub x}, and SiO{sub x} compounds is currently under development. Varying the chemical composition of these compounds allows a wide range of control over their physical - specifically, optical and electrical - properties. The development of technology for synthesizing such films requires a detailed understanding of their atomic structure. Current views on the atomic structure of nonstoichiometric silicon nitrides and oxides are reviewed and summarized. (reviews of topical problems)

  16. SIMILAR POINT-DEFECTS IN CRYSTALLINE AND AMORPHOUS-SILICON

    NARCIS (Netherlands)

    LIANG, ZN; NIESEN, L; VANDENHOVEN, GN; CUSTER, JS

    1994-01-01

    The microscopic nature of defects in ion-implanted crystalline silicon (c-Si) and amorphous silicon (a-Si) has been studied using Mossbauer spectroscopy. The evolution of the local structure around the probe atoms is followed during thermal annealing of ion-beam-created amorphous and ion-beam-damage

  17. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  18. Energy landscape of relaxed amorphous silicon

    Science.gov (United States)

    Valiquette, Francis; Mousseau, Normand

    2003-09-01

    We analyze the structure of the energy landscape of a well-relaxed 1000-atom model of amorphous silicon using the activation-relaxation technique (ART nouveau). Generating more than 40 000 events starting from a single minimum, we find that activated mechanisms are local in nature, that they are distributed uniformly throughout the model, and that the activation energy is limited by the cost of breaking one bond, independently of the complexity of the mechanism. The overall shape of the activation-energy-barrier distribution is also insensitive to the exact details of the configuration, indicating that well-relaxed configurations see essentially the same environment. These results underscore the localized nature of relaxation in this material.

  19. Dynamics of hydrogen in hydrogenated amorphous silicon

    Indian Academy of Sciences (India)

    Ranber Singh; S Prakash

    2003-07-01

    The problem of hydrogen diffusion in hydrogenated amorphous silicon (a-Si:H) is studied semiclassically. It is found that the local hydrogen concentration fluctuations-induced extra potential wells, if intense enough, lead to the localized electronic states in a-Si:H. These localized states are metastable. The trapping of electrons and holes in these states leads to the electrical degradation of the material. These states also act as recombination centers for photo-generated carriers (electrons and holes) which in turn may excite a hydrogen atom from a nearby Si–H bond and breaks the weak (strained) Si–Si bond thereby apparently enhancing the hydrogen diffusion and increasing the light-induced dangling bonds.

  20. Tunable plasticity in amorphous silicon carbide films.

    Science.gov (United States)

    Matsuda, Yusuke; Kim, Namjun; King, Sean W; Bielefeld, Jeff; Stebbins, Jonathan F; Dauskardt, Reinhold H

    2013-08-28

    Plasticity plays a crucial role in the mechanical behavior of engineering materials. For instance, energy dissipation during plastic deformation is vital to the sufficient fracture resistance of engineering materials. Thus, the lack of plasticity in brittle hybrid organic-inorganic glasses (hybrid glasses) often results in a low fracture resistance and has been a significant challenge for their integration and applications. Here, we demonstrate that hydrogenated amorphous silicon carbide films, a class of hybrid glasses, can exhibit a plasticity that is even tunable by controlling their molecular structure and thereby leads to an increased and adjustable fracture resistance in the films. We decouple the plasticity contribution from the fracture resistance of the films by estimating the "work-of-fracture" using a mean-field approach, which provides some insight into a potential connection between the onset of plasticity in the films and the well-known rigidity percolation threshold.

  1. N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.

    Science.gov (United States)

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Sang-Hoon; Song, Jean-Ho; Hwang, Nong-Moon

    2011-09-01

    Since n-type crystalline silicon films have the electric property much better than those of hydrogenated amorphous and microcrystalline silicon films, they can enhance the performance of advanced electronic devices such as solar cells and thin film transistors (TFTs). Since the formation of amorphous silicon is unavoidable in the low temperature deposition of microcrystalline silicon on a glass substrate at temperatures less than 550 degrees C in the plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition (HWCVD), crystalline silicon films have not been deposited directly on a glass substrate but fabricated by the post treatment of amorphous silicon films. In this work, by adding the HCl gas, amorphous silicon-free n-type crystalline silicon films could be deposited directly on a glass substrate by HWCVD. The resistivity of the n-type crystalline silicon film for the flow rate ratio of [HCl]/[SiH4] = 7.5 and [PH3]/[SiH4] = 0.042 was 5.31 x 10(-4) ohms cm, which is comparable to the resistivity 1.23 x 10(-3) ohms cm of films prepared by thermal annealing of amorphous silicon films. The absence of amorphous silicon in the film could be confirmed by high resolution transmission electron microscopy.

  2. Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride

    Science.gov (United States)

    Serpenguzel, Ali; Aydinli, Atilla; Bek, Alpan

    1998-07-01

    Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.

  3. RF Sputtering for preparing substantially pure amorphous silicon monohydride

    Science.gov (United States)

    Jeffrey, Frank R.; Shanks, Howard R.

    1982-10-12

    A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  4. Stability of deuterated amorphous silicon solar cells

    CERN Document Server

    Munyeme, G; Van der Meer, L F G; Dijkhuis, J I; Van der Weg, W F; Schropp, R

    2004-01-01

    In order to elucidate the microscopic mechanism for the earlier observed enhanced stability of deuterated amorphous silicon solar cells we conducted a side by-side study of fully deuterated intrinsic layers on crystalline silicon substrates using the free-electron laser facility at Nieuwegein (FELIX) to resonantly excite the Si-D stretching vibration and measure the various relaxation channels available to these modes, and of p-i-n solar cells with identical intrinsic absorber layers on glass/TCO substrates to record the degradation and stabilization of solar cell parameters under prolonged light soaking treatments. From our comparative study it is shown that a-Si:D has a superior resistance against light-induced defect creation as compared to a-Si:H and that this can now be explained in the light of the 'H collision model' since the initial step in the process, the release of H, is more likely than that of D. Thus, a natural explanation for the stability as observed in a-Si:D solar cells is provided.

  5. Using amorphous silicon solar cells to boost the viability of luminescent solar concentrators

    NARCIS (Netherlands)

    Farrell, D.J.; van Sark, W.G.J.H.M.; Velthuijsen, S.; Schropp, R.E.I.

    2010-01-01

    We have, for the first time, designed and fabricated hydrogenated amorphous silicon solar cells to be used in conjunction with Luminescent Solar Concentrators (LSCs). LSCs are planar plastic sheets doped with organic dyes that absorb solar illumination and down shift the energy to narrowband

  6. Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon

    Institute of Scientific and Technical Information of China (English)

    ZHU Xian-Fang; WANG Zhan-Guo

    2005-01-01

    @@ We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation.

  7. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    Energy Technology Data Exchange (ETDEWEB)

    Fortmann, C.M.; Hegedus, S.S. (Institute of Energy Conversion, Newark, DE (United States))

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  8. Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

    Science.gov (United States)

    Bai, Feng; Li, Hong-Jin; Huang, Yuan-Yuan; Fan, Wen-Zhong; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo; Zhao, Quan-Zhong

    2016-10-01

    We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser.

  9. Hydrogen effusion from tritiated amorphous silicon

    Science.gov (United States)

    Kherani, N. P.; Liu, B.; Virk, K.; Kosteski, T.; Gaspari, F.; Shmayda, W. T.; Zukotynski, S.; Chen, K. P.

    2008-01-01

    Results for the effusion and outgassing of tritium from tritiated hydrogenated amorphous silicon (a-Si:H:T) films are presented. The samples were grown by dc-saddle field glow discharge at various substrate temperatures between 150 and 300°C. The tracer property of radioactive tritium is used to detect tritium release. Tritium effusion measurements are performed in a nonvacuum ion chamber and are found to yield similar results as reported for standard high vacuum technique. The results suggest for decreasing substrate temperature the growth of material with an increasing concentration of voids. These data are corroborated by analysis of infrared absorption data in terms of microstructure parameters. For material of low substrate temperature (and high void concentration) tritium outgassing in air at room temperature was studied, and it was found that after 600h about 0.2% of the total hydrogen (hydrogen+tritium) content is released. Two rate limiting processes are identified. The first process, fast tritium outgassing with a time constant of 15h, seems to be related to surface desorption of tritiated water (HTO) with a free energy of desorption of 1.04eV. The second process, slow tritium outgassing with a time constant of 200-300h, appears to be limited by oxygen diffusivity in a growing oxide layer. This material of lowest H stability would lose half of the hydrogen after 60years.

  10. Bulk fabrication and properties of solar grade silicon microwires

    Directory of Open Access Journals (Sweden)

    F. A. Martinsen

    2014-11-01

    Full Text Available We demonstrate a substrate-free novel route for fabrication of solar grade silicon microwires for photovoltaic applications. The microwires are fabricated from low purity starting material via a bulk molten-core fibre drawing method. In-situ segregation of impurities during the directional solidification of the fibres yields solar grade silicon cores (microwires where the concentration of electrically detrimental transition metals has been reduced between one and two orders of magnitude. The microwires show bulk minority carrier diffusion lengths measuring ∼40 μm, and mobilities comparable to those of single-crystal silicon. Microwires passivated with amorphous silicon yield diffusion lengths comparable to those in the bulk.

  11. Laser assisted patterning of hydrogenated amorphous silicon for interdigitated back contact silicon heterojunction solar cell

    Science.gov (United States)

    De Vecchi, S.; Desrues, T.; Souche, F.; Muñoz, D.; Lemiti, M.

    2012-10-01

    This work reports on the elaboration of a new industrial process based on laser selective ablation of dielectric layers for Interdigitated Back Contact Silicon Heterojunction (IBC Si-HJ) solar cells fabrication. Choice of the process is discussed and cells are processed to validate its performance. A pulsed green laser (515nm) with 10-20ns pulse duration is used for hydrogenated amorphous silicon (a-Si:H) layers patterning steps, whereas metallization is made by screen printed. High Open-Circuit Voltage (Voc=699mV) and Fill Factor (FF=78.5%) values are obtained simultaneously on IBC Si-HJ cells, indicating a high surface passivation level and reduced resistive losses. An efficiency of 19% on non textured 26 cm² solar cells has been reached with this new industrial process.

  12. Optical and electrical characterization of crystalline silicon films formed by rapid thermal annealing of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Baldus-Jeursen, Christopher, E-mail: cjbaldus@uwaterloo.ca; Tarighat, Roohollah Samadzadeh, E-mail: rsamadza@uwaterloo.ca; Sivoththaman, Siva, E-mail: sivoththaman@uwaterloo.ca

    2016-03-31

    The effect of rapid thermal annealing (RTA) on n-type hydrogenated amorphous silicon (a-Si:H) films deposited on single-crystal silicon (c-Si) wafers was studied by electrical and optical methods. Deposition of a-Si:H films by plasma-enhanced chemical vapor deposition (PECVD) was optimized for high deposition rate and maximum film uniformity. RTA processed films were characterized by spreading resistance profiling (SRP), Hall effect, spectroscopic ellipsometry, defect etching, and transmission electron microscopy (TEM). It was found that the films processed between 600 °C and 1000 °C were highly crystalline and that the defect density in the films diminished with increasing thermal budget. Junctions formed by the RTA processed n-type a-Si:H films on p-type c-Si wafers were tested for device applicability. It was established that these films can be used as the emitter layer in n{sup +}p photovoltaic (PV) devices with over 14% conversion efficiency. - Highlights: • Rapid thermal annealing of doped amorphous silicon deposited on single-crystal silicon (c-Si) wafers resulted in highly crystalline films for photovoltaic devices. • As the annealing temperature increased, the electrical and optical properties of the films became increasingly similar to single-crystal silicon. • Annealing temperatures between 500-1000 oC were investigated. Solar cell devices fabricated after annealing at 750 oC were found to be the most suitable compromise between good quality crystalline films and minimal dopant diffusion into the c-Si wafer. • Annealed films were highly conductive without the need for a transparent conducting oxide.

  13. Progress in amorphous silicon solar cells produced by reactive sputtering

    Science.gov (United States)

    Moustakas, T. D.

    The photovoltaic properties of reactively sputtered amorphous silicon are reviewed and it is shown that efficient PIN solar cells can be fabricated by the method of sputtering. The photovoltaic properties of the intrinsic films correlate with their structural and compositional inhomogeneities. Hydrogen incorporation and small levels of phosphorus and boron impurities also affect the photovoltaic properties through reduction of residual dangling bond related defects and modification of their occupation. The optical and transport properties of the doped P and N-films were found to depend sensitively on the amount of hydrogen and boron or phosphorus incorporation into the films as well as on their degree of crystallinity. Combination of the best intrinsic and doped films leads to PIN solar cell structures generating J(sc) of 13 mA/sq cm and V(oc) of between 0.85 to 0.95 volts. The efficiency of these devices, 5 to 6 percent, is limited by the low FF, typically about 50 percent. As a further test to the potential of this technology efficient tandem solar cell structures were fabricated, and device design concepts, such as the incorporation of optically reflective back contacts were tested.

  14. Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2016-08-01

    Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

  15. Plasma deposition of amorphous silicon-based materials

    CERN Document Server

    Bruno, Giovanni; Madan, Arun

    1995-01-01

    Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

  16. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  17. Magneto-optical switch with amorphous silicon waveguides on magneto-optical garnet

    Science.gov (United States)

    Ishida, Eiichi; Miura, Kengo; Shoji, Yuya; Mizumoto, Tetsuya; Nishiyama, Nobuhiko; Arai, Shigehisa

    2016-08-01

    We fabricated a magneto-optical (MO) switch with a hydrogenated amorphous silicon waveguide on an MO garnet. The switch is composed of a 2 × 2 Mach-Zehnder interferometer (MZI). The switch state is controlled by an MO phase shift through a magnetic field generated by a current flowing in an electrode located on the MZI. The switching operation was successfully demonstrated with an extinction ratio of 11.7 dB at a wavelength of 1550 nm.

  18. Tandem solar cells made from amorphous silicon and polymer bulk heterojunction sub-cells.

    Science.gov (United States)

    Park, Sung Heum; Shin, Insoo; Kim, Kwang Ho; Street, Robert; Roy, Anshuman; Heeger, Alan J

    2015-01-14

    A tandem solar cell based on a combination of an amorphous silicon (a-Si) and polymer solar cell (PSC) is demonstrated. As these tandem devices can be readily fabricated by low-cost methods, they require only a minor increase in the total manufacturing cost. Therefore, a combination of a-Si and PSC provides a compelling solution to reduce the cost of electricity produced by photovoltaics.

  19. Amorphous silicon thin-film solar cells on glass fiber textiles

    Energy Technology Data Exchange (ETDEWEB)

    Plentz, Jonathan, E-mail: jonathan.plentz@leibniz-ipht.de; Andrä, Gudrun; Pliewischkies, Torsten; Brückner, Uwe; Eisenhawer, Björn; Falk, Fritz

    2016-02-15

    Graphical abstract: - Highlights: • Amorphous silicon solar cells on textile glass fiber fabrics are demonstrated. • Open circuit voltages of 883 mV show shunt-free contacting on non-planar fabrics. • Short-circuit current densities of 3.7 mA/cm{sup 2} are limited by transmission losses. • Fill factors of 43.1% and pseudo fill factors of 70.2% show high series resistance. • Efficiencies of 1.4% and pseudo efficiencies of 2.1% realized on textile fabrics. - Abstract: In this contribution, amorphous silicon thin-film solar cells on textile glass fiber fabrics for smart textiles are prepared and the photovoltaic performance is characterized. These solar cells on fabrics delivered open circuit voltages up to 883 mV. This shows that shunt-free contacting of the solar cells was successful, even in case of non-planar fabrics. The short-circuit current densities up to 3.7 mA/cm{sup 2} are limited by transmission losses in a 10 nm thin titanium layer, which was used as a semi-transparent contact. The low conductivity of this layer limits the fill factor to 43.1%. Pseudo fill factors, neglecting the series resistance, up to 70.2% were measured. Efficiencies up to 1.4% and pseudo efficiencies up to 2.1% were realized on textile fabrics. A transparent conductive oxide could further improve the efficiency to above 5%.

  20. Threshold irradiation dose for amorphization of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

  1. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    Science.gov (United States)

    Chowdhury, Zahidur R.; Kherani, Nazir P.

    2014-12-01

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide-plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are VOC of 666 mV, JSC of 29.5 mA-cm-2, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  2. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    Science.gov (United States)

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.

  3. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Keya, Kimitaka; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2015-09-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  4. Ab initio modelling of boron related defects in amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Tiago A.; Torres, Vitor J.B. [Department of Physics, University of Aveiro, Campus Santiago, 3810-193 Aveiro (Portugal)

    2012-10-15

    We have modeled boron related point defects in amorphous silicon, using an ab initio method, the Density functional theory-pseudopotential code Aimpro. The boron atoms were embedded in 64 atom amorphous silicon cubic supercells. The calculations were performed using boron defects in 15 different supercells. These supercells were developed using a modified Wooten-Winer-Weaire bond switching mechanism. In average, the properties of the 15 supercells agree with the observed radial and bond angle distributions, as well the electronic and vibrational density of states and Raman spectra. In amorphous silicon it has been very hard to find real self-interstitials, since for almost all the tested configurations, the amorphous lattice relaxes overall. We found that substitutional boron prefers to be 4-fold coordinated. We find also an intrinsic hole-trap in the non-doped amorphous lattice, which may explain the low efficiency of boron doping. The local vibrational modes are, in average, higher than the correspondent crystalline values (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Comprehensive modeling of ion-implant amorphization in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mok, K.R.C. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain) and Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore)]. E-mail: g0202446@nus.edu.sg; Jaraiz, M. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Martin-Bragado, I. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Synopsys, Karl-Hammerschmidt Strasse 34, D-85609 Aschheim/Dornach (Germany); Rubio, J.E. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Castrillo, P. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Pinacho, R. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Srinivasan, M.P. [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore); Benistant, F. [Chartered Semiconductor Manufacturing. 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2005-12-05

    A physically based model has been developed to simulate the ion-implant induced damage accumulation up to amorphization in silicon. Based on damage structures known as amorphous pockets (AP), which are three-dimensional, irregularly shaped agglomerates of interstitials (I) and vacancies (V) surrounded by crystalline silicon, the model is able to reproduce a wide range of experimental observations of damage accumulation and amorphization with interdependent implantation parameters. Instead of recrystallizing the I's and V's instantaneously, the recrystallization rate of an AP containing nI and mV is a function of its effective size, defined as min(n, m), irrespective of its internal spatial configuration. The parameters used in the model were calibrated using the experimental silicon amorphous-crystalline transition temperature as a function of dose rate for C, Si, and Ge. The model is able to show the superlinear damage build-up with dose, the extent of amorphous layer and the superadditivity effect of polyatomic ions.

  6. Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators

    CERN Document Server

    Pelc, Jason S; Vo, Sonny; Santori, Charles; Fattal, David A; Beausoleil, Raymond G

    2014-01-01

    We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microring. In comparison with telecom-band optical switching in crystalline silicon microrings, a-Si:H exhibits substantially higher switching speeds due to reduced impact of free-carrier processes.

  7. Supercontinuum generation in hydrogenated amorphous silicon waveguides at telecommunication wavelengths.

    Science.gov (United States)

    Safioui, Jassem; Leo, François; Kuyken, Bart; Gorza, Simon-Pierre; Selvaraja, Shankar Kumar; Baets, Roel; Emplit, Philippe; Roelkens, Gunther; Massar, Serge

    2014-02-10

    We report supercontinuum (SC) generation centered on the telecommunication C-band (1550 nm) in CMOS compatible hydrogenated amorphous silicon waveguides. A broadening of more than 550 nm is obtained in 1cm long waveguides of different widths using as pump picosecond pulses with on chip peak power as low as 4 W.

  8. First-principles study of hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2009-01-01

    We use a molecular-dynamics simulation within density-functional theory to prepare realistic structures of hydrogenated amorphous silicon. The procedure consists of heating a crystalline structure of Si64H8 to 2370 K, creating a liquid and subsequently cooling it down to room temperature. The effect

  9. Atomistic models of hydrogenated amorphous silicon nitride from first principles

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2010-01-01

    We present a theoretical study of hydrogenated amorphous silicon nitride (a-SiNx:H), with equal concentrations of Si and N atoms (x=1), for two considerably different densities (2.0 and 3.0 g/cm3). Densities and hydrogen concentration were chosen according to experimental data. Using

  10. Performance of amorphous silicon photovoltaic systems, 1985--1989

    Energy Technology Data Exchange (ETDEWEB)

    1990-04-01

    This report discusses the performance of commercial amorphous silicon modules used in photovoltaic power systems from 1985 through 1989. Topics discussed include initial degradation, reliability, durability, and effects of temperature and solar irradiance on peak power and energy production. 6 refs., 18 figs.

  11. Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica.

    Science.gov (United States)

    Mehonic, Adnan; Buckwell, Mark; Montesi, Luca; Munde, Manveer Singh; Gao, David; Hudziak, Stephen; Chater, Richard J; Fearn, Sarah; McPhail, David; Bosman, Michel; Shluger, Alexander L; Kenyon, Anthony J

    2016-09-01

    Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.

  12. First-principles study of hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2009-01-01

    We use a molecular-dynamics simulation within density-functional theory to prepare realistic structures of hydrogenated amorphous silicon. The procedure consists of heating a crystalline structure of Si64H8 to 2370 K, creating a liquid and subsequently cooling it down to room temperature. The effect

  13. Silicon nanoparticle optimization and integration into amorphous silicon via PECVD for use in photovoltaics

    Science.gov (United States)

    Klafehn, Grant W.

    An alternative approach to traditional growth methods of nanocrystalline material is co-deposition by injection of separately synthesized silicon nanoparticles into amorphous silicon. Current methods of co-deposition of silicon nanoparticles and amorphous silicon via plasma enhanced chemical vapor deposition allow the two reactors' pressures to affect each other, leading to either poor amorphous silicon quality or uncontrollable nanoparticle size and deposition rate. In this thesis, a technique for greater control of stand-alone silicon nanoparticle size and quality grown was achieved by using a slit nozzle. The nozzle was used to separate the nanoparticle and amorphous reactors, allowing for the ability to control nanoparticle size, crystallinity, and deposition rate during co-deposition, while still allowing for high quality amorphous silicon growth. Changing the width of the nozzle allowed for control of the size of the nanoparticles from 10 to 4.5 nm in diameter, and allowed for the precursor gas flow rate, and thus deposition rate, to be changed with only a 6 % change in size estimated from luminescence emission wavelength. Co-deposited samples were grown within a broad range of flow rates for the silicon nanoparticle precursor gas, resulting in each sample having a different crystal fraction. FTIR, PL, Raman, and XRD were used to analyze their composition. The silicon nanoparticle synthesis was separately optimized to control size and crystallinity, and the influence of the nanoparticle process gases on amorphous silicon growth was also explored. Finally, COMSOL simulations were performed to support and possibly predict Si-NP growth variables that pertain to Si-NP size.

  14. Novel Scheme of Amorphous/Crystalline Silicon Heterojunction Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    De Iuliis, S.; Geerligs, L.J. [ECN Solar Energy, Petten (Netherlands); Tucci, M.; Serenelli, L.; Salza, E. [ENEA Research Center Casaccia, Roma (Italy); De Cesare, G.; Caputo, D.; Ceccarelli, M. [University ' Sapienza' , Department of Electronic Engineering, Roma (Italy)

    2007-01-15

    In this paper we investigate in detail how the heterostructure concept can be implemented in an interdigitated back contact solar cell, in which both the emitters are formed on the back side of the c-Si wafer by amorphous/crystalline silicon heterostructure, and at the same time the grid-less front surface is passivated by a double layer of amorphous silicon and silicon nitride, which also provides an anti-reflection coating. The entire process, held at temperature below 300C, is photolithography-free, using a metallic self-aligned mask to create the interdigitated pattern, and we show that the alignment is feasible. An open-circuit voltage of 687 mV has been measured on a p-type monocrystalline silicon wafer. The mask-assisted deposition process does not influence the uniformity of the deposited amorphous silicon layers. Photocurrent limits factor has been investigated with the aid of one-dimensional modeling and quantum efficiency measurements. On the other hand several technological aspects that limit the fill factor and the short circuit current density still need improvements.

  15. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scattering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  16. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

    Science.gov (United States)

    Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2004-11-01

    Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material-namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)-for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10cm2V-1s-1, which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9cm2V-1s-1, and device characteristics are stable during repetitive bending of the TTFT sheet.

  17. Enhanced performance of a structured cyclo olefin copolymer-based amorphous silicon solar cell

    Science.gov (United States)

    Zhan, Xinghua; Chen, Fei; Gao, Mengyu; Tie, Shengnian; Gao, Wei

    2017-07-01

    The submicron array was fabricated onto a cyclo olefin copolymer (COC) film by a hot embossing method. An amorphous silicon p-i-n junction and transparent conductive layers were then deposited onto it through a plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering. The efficiency of the fabricated COC-based solar cell was measured and the result demonstrated 18.6% increase of the solar cell efficiency when compared to the sample without array structure. The imprinted polymer solar cells with submicron array indeed increase their efficiency.

  18. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  19. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss....... A sample double ring add-drop filter is presented....

  20. High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; van Sark, W.G.J.H.M.; Rath, J.K.

    2011-01-01

    We investigate the influence of thermal annealing on the passivation quality of crystalline silicon (c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For temperatures up to 255 C, we find an increase in surface passivation quality, corresponding to a decreased da

  1. Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide

    Science.gov (United States)

    Chang, Geng-rong; Ma, Fei; Ma, Da-yan; Xu, Ke-wei

    2010-11-01

    Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized by a magnetron co-sputtering process and post-annealing. X-ray photoelectron spectroscopy, glancing x-ray diffraction, Raman spectroscopy and high-resolution transmission electron microscopy were used to characterize the chemical composition and the microstructural properties. The results show that the sizes and size distribution of silicon quantum dots can be tuned by changing the annealing atmosphere and the atom ratio of silicon and carbon in the matrix. A physicochemical mechanism is proposed to demonstrate this formation process. Photoluminescence measurements indicate a multi-band configuration due to the quantum confinement effect of silicon quantum dots with different sizes. The PL spectra are further widened as a result of the existence of amorphous silicon quantum dots. This multi-band configuration would be extremely advantageous in improving the photoelectric conversion efficiency of photovoltaic solar cells.

  2. Low Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Ching-In Wu

    2013-01-01

    Full Text Available The authors propose a methodology to improve both the deposition rate and SiH4 consumption during the deposition of the amorphous silicon intrinsic layer of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate. It was found that the most important issue is to find out the saturation point of deposition rate which guarantees saturated utilization of the sourcing gas. It was also found that amorphous silicon intrinsic layers with the same k value will result in the same degradation of the fabricated modules. Furthermore, it was found that we could significantly reduce the production cost of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate by fine-tuning the process parameters.

  3. Light-induced metastable structural changes in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsche, H. [Univ. of Chicago, IL (United States)

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  4. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires.

    Science.gov (United States)

    Yu, Linwei; O'Donnell, Benedict; Foldyna, Martin; Roca i Cabarrocas, Pere

    2012-05-17

    Constructing radial junction hydrogenated amorphous silicon (a-Si:H) solar cells on top of silicon nanowires (SiNWs) represents a promising approach towards high performance and cost-effective thin film photovoltaics. We here develop an all-in situ strategy to grow SiNWs, via a vapour-liquid-solid (VLS) mechanism on top of ZnO-coated glass substrate, in a plasma-enhanced chemical vapour deposition (PECVD) reactor. Controlling the distribution of indium catalyst drops allows us to tailor the as-grown SiNW arrays into suitable size and density, which in turn results in both a sufficient light trapping effect and a suitable arrangement allowing for conformal coverage of SiNWs by subsequent a-Si:H layers. We then demonstrate the fabrication of radial junction solar cells and carry on a parametric study designed to shed light on the absorption and quantum efficiency response, as functions of the intrinsic a-Si:H layer thickness and the density of SiNWs. These results lay a solid foundation for future structural optimization and performance ramp-up of the radial junction thin film a-Si:H photovoltaics.

  5. Silicon fabric for multi-functional applications

    KAUST Repository

    Sevilla, Galo T.

    2013-06-01

    This paper reports a generic process flow to fabricate mechanically flexible and optically semi-transparent thermoelectric generators (TEGs), micro lithium-ion batteries (μLIB) and metal-oxide-semiconductor capacitors (MOSCAPs) on mono-crystalline silicon fabric platforms from standard bulk silicon (100) wafers. All the fabricated devices show outstanding mechanical flexibility and performance, making an important step towards monolithic integration of Energy Chip (self-powered devices) including energy harvesters and electronic devices on flexible platforms. We also report a recyclability process for the remaining bulk substrate after release, allowing us to achieve a low cost flexible platform for high performance applications. © 2013 IEEE.

  6. Excimer laser crystallization of amorphous silicon on metallic substrate

    Science.gov (United States)

    Delachat, F.; Antoni, F.; Slaoui, A.; Cayron, C.; Ducros, C.; Lerat, J.-F.; Emeraud, T.; Negru, R.; Huet, K.; Reydet, P.-L.

    2013-06-01

    An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J cm-2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J cm-2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites' columnar growth.

  7. The role of hydrogenated amorphous silicon oxide buffer layer on improving the performance of hydrogenated amorphous silicon germanium single-junction solar cells

    Science.gov (United States)

    Sritharathikhun, Jaran; Inthisang, Sorapong; Krajangsang, Taweewat; Krudtad, Patipan; Jaroensathainchok, Suttinan; Hongsingtong, Aswin; Limmanee, Amornrat; Sriprapha, Kobsak

    2016-12-01

    Hydrogenated amorphous silicon oxide (a-Si1-xOx:H) film was used as a buffer layer at the p-layer (μc-Si1-xOx:H)/i-layer (a-Si1-xGex:H) interface for a narrow band gap hydrogenated amorphous silicon germanium (a-Si1-xGex:H) single-junction solar cell. The a-Si1-xOx:H film was deposited by plasma enhanced chemical vapor deposition (PECVD) at 40 MHz in a same processing chamber as depositing the p-type layer. An optimization of the thickness of the a-Si1-xOx:H buffer layer and the CO2/SiH4 ratio was performed in the fabrication of the a-Si1-xGex:H single junction solar cells. By using the wide band gap a-Si1-xOx:H buffer layer with optimum thickness and CO2/SiH4 ratio, the solar cells showed an improvement in the open-circuit voltage (Voc), fill factor (FF), and short circuit current density (Jsc), compared with the solar cells fabricated using the conventional a-Si:H buffer layer. The experimental results indicated the excellent potential of the wide-gap a-Si1-xOx:H buffer layers for narrow band gap a-Si1-xGex:H single junction solar cells.

  8. Electrochemical degradation of amorphous-silicon photovoltaic modules

    Science.gov (United States)

    Mon, G. R.; Ross, R. G., Jr.

    Techniques of module electrochemical corrosion research, developed during reliability studies of crystalline-silicon modules (C-Si), have been applied to this new investigation into amorphous-silicon (a-Si) module reliability. Amorphous-Si cells, encapsulated in the polymers polyvinyl butyral (PVB) and ethylene vinyl acetate (EVA), were exposed for more than 1200 hours in a controlled 85 C/85 percent RH environment, with a constant 500 volts applied between the cells and an aluminum frame. Plotting power output reduction versus charge transferred reveals that about 50 percent a-Si cell failures can be expected with the passage of 0.1 to 1.0 Coulomb/cm of cell-frame edge length; this threshold is somewhat less than that determined for C-Si modules.

  9. High thermal conductivity of a hydrogenated amorphous silicon film.

    Science.gov (United States)

    Liu, Xiao; Feldman, J L; Cahill, D G; Crandall, R S; Bernstein, N; Photiadis, D M; Mehl, M J; Papaconstantopoulos, D A

    2009-01-23

    We measured the thermal conductivity kappa of an 80 microm thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3omega (80-300 K) and the time-domain thermo-reflectance (300 K) methods. The kappa is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher kappa for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

  10. Infrared electroabsorption spectra in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lyou, J.H.; Schiff, E.A.; Hegedus, S.S.; Guha, S.; Yang, J.

    1999-07-01

    The authors report measurements of the infrared spectrum detected by modulating the reverse-bias voltage across amorphous silicon pin solar cells and Schottky barrier diodes. They find a band with a peak energy of 0.8 eV. The existence of this band has not, to their knowledge, been reported previously. The strength of the infrared band depends linearly upon applied bias, as opposed to the quadratic dependence for interband electroabsorption in amorphous silicon. The band's peak energy agrees fairly well with the known optical transition energies for dangling bond defects, but the linear dependence on bias and the magnitude of the signal are surprising if interpreted using an analogy to interband electroabsorption. A model based on absorption by defects near the n/i interface of the diodes accounts well for the infrared spectrum.

  11. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    Energy Technology Data Exchange (ETDEWEB)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E. [Bilkent Univ., Ankara (Turkey). Dept. of Physics

    2001-07-01

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation. (orig.)

  12. Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

    Science.gov (United States)

    Bayindir, M.; Tanriseven, S.; Aydinli, A.; Ozbay, E.

    We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.

  13. Evolution of the potential-energy surface of amorphous silicon

    OpenAIRE

    Kallel, Houssem; Mousseau, Normand; Schiettekatte, François

    2010-01-01

    The link between the energy surface of bulk systems and their dynamical properties is generally difficult to establish. Using the activation-relaxation technique (ART nouveau), we follow the change in the barrier distribution of a model of amorphous silicon as a function of the degree of relaxation. We find that while the barrier-height distribution, calculated from the initial minimum, is a unique function that depends only on the level of distribution, the reverse-barrier height distributio...

  14. Optical characterization and density of states determination of silicon nanocrystals embedded in amorphous silicon based matrix

    Science.gov (United States)

    van Sebille, M.; Vasudevan, R. A.; Lancee, R. J.; van Swaaij, R. A. C. M. M.; Zeman, M.

    2015-08-01

    We present a non-destructive measurement and simple analysis method for obtaining the absorption coefficient of silicon nanocrystals (NCs) embedded in an amorphous matrix. This method enables us to pinpoint the contribution of silicon NCs to the absorption spectrum of NC containing films. The density of states (DOS) of the amorphous matrix is modelled using the standard model for amorphous silicon while the NCs are modelled using one Gaussian distribution for the occupied states and one for the unoccupied states. For laser annealed a-Si0.66O0.34:H films, our analysis shows a reduction of the NC band gap from approximately 2.34-2.08 eV indicating larger mean NC size for increasing annealing laser fluences, accompanied by a reduction in NC DOS distribution width from 0.28-0.26 eV, indicating a narrower size distribution.

  15. Two-phase electrochemical lithiation in amorphous silicon.

    Science.gov (United States)

    Wang, Jiang Wei; He, Yu; Fan, Feifei; Liu, Xiao Hua; Xia, Shuman; Liu, Yang; Harris, C Thomas; Li, Hong; Huang, Jian Yu; Mao, Scott X; Zhu, Ting

    2013-02-13

    Lithium-ion batteries have revolutionized portable electronics and will be a key to electrifying transport vehicles and delivering renewable electricity. Amorphous silicon (a-Si) is being intensively studied as a high-capacity anode material for next-generation lithium-ion batteries. Its lithiation has been widely thought to occur through a single-phase mechanism with gentle Li profiles, thus offering a significant potential for mitigating pulverization and capacity fade. Here, we discover a surprising two-phase process of electrochemical lithiation in a-Si by using in situ transmission electron microscopy. The lithiation occurs by the movement of a sharp phase boundary between the a-Si reactant and an amorphous Li(x)Si (a-Li(x)Si, x ~ 2.5) product. Such a striking amorphous-amorphous interface exists until the remaining a-Si is consumed. Then a second step of lithiation sets in without a visible interface, resulting in the final product of a-Li(x)Si (x ~ 3.75). We show that the two-phase lithiation can be the fundamental mechanism underpinning the anomalous morphological change of microfabricated a-Si electrodes, i.e., from a disk shape to a dome shape. Our results represent a significant step toward the understanding of the electrochemically driven reaction and degradation in amorphous materials, which is critical to the development of microstructurally stable electrodes for high-performance lithium-ion batteries.

  16. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    Science.gov (United States)

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    2016-07-01

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline silicon wafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450 °C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450 °C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltage of over 710 mV and an efficiency of over 19%.

  17. Continuum simulation of solid phase epitaxial regrowth of amorphized silicon including most advanced physical interactions

    Energy Technology Data Exchange (ETDEWEB)

    Delalleau, Julien; Simola, Roberto [STMicroelectronics, ZI de Rousset, BP 2, 13106 Rousset (France); Pakfar, Ardechir; Tavernier, Clement [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Bazizi, El-Medhi [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); LAAS/CNRS, University of Toulouse, 7 av. Col. Roche, 31077 Toulouse (France); CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse (France)

    2011-03-15

    Solid-phase-epitaxial regrowth (SPER) of Si amorphized by ion implantation is considered as a potential solution for the fabrication of highly-activated ultra-shallow junctions for future technology nodes of Si CMOS devices. In the frame of 32 and 22 nm technologies node development, SPER occurs after amorphizing implantations used in source/drain regions. To get an accurate simulation of dopant activation and junction depth position, a suitable continuum SPER model, implemented into a commercial simulator, is now mandatory. This TCAD model must consider the different physical effects associated with SPER: silicon regrowth rate, dopants redistribution snow plough effect, and interaction with silicon point defects. In this work, using a previously established model, we have implemented an improved physically based model for SPER and, several formulations have been developed to enable a robust/accurate modeling of the recrystallization velocity. It takes into account the direct interaction between amorphous/crystalline interface kinetics and point defects, and a regrowth rate dependent on temperature. Simulation results of dopant concentration profiles are in good agreement with experimental data and can provide important insight for optimizing the bulk silicon process as well in one dimension as two dimensions. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Surface bioactivity of plasma implanted silicon and amorphous carbon

    Institute of Scientific and Technical Information of China (English)

    Paul K CHU

    2004-01-01

    Plasma immersion ion implantation and deposition (PⅢ&D) has been shown to be an effective technique to enhance the surface bioactivity of materials. In this paper, recent progress made in our laboratory on plasma surface modification single-crystal silicon and amorphous carbon is reviewed. Silicon is the most important material in the integrated circuit industry but its surface biocompatibility has not been investigated in details. We have recently performed hydrogen PⅢ into silicon and observed the biomimetic growth of apatite on its surface in simulated body fluid. Diamond-like carbon (DLC) is widely used in the industry due to its excellent mechanical properties and chemical inertness. The use of this material in biomedical engineering has also attracted much attention. It has been observed in our laboratory that doping DLC with nitrogen by means of PⅢ can improve the surface blood compatibility. The properties as well as in vitro biological test results will be discussed in this article.

  19. Fabrication of 3D Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kok, A.; Hansen, T.E.; Hansen, T.A.; Lietaer, N.; Summanwar, A.; /SINTEF, Oslo; Kenney, C.; Hasi, J.; /SLAC; Da Via, C.; /Manchester U.; Parker, S.I.; /Hawaii U.

    2012-06-06

    Silicon sensors with a three-dimensional (3-D) architecture, in which the n and p electrodes penetrate through the entire substrate, have many advantages over planar silicon sensors including radiation hardness, fast time response, active edge and dual readout capabilities. The fabrication of 3D sensors is however rather complex. In recent years, there have been worldwide activities on 3D fabrication. SINTEF in collaboration with Stanford Nanofabrication Facility have successfully fabricated the original (single sided double column type) 3D detectors in two prototype runs and the third run is now on-going. This paper reports the status of this fabrication work and the resulted yield. The work of other groups such as the development of double sided 3D detectors is also briefly reported.

  20. Growth model of lantern-like amorphous silicon oxide nanowires

    Science.gov (United States)

    Wu, Ping; Zou, Xingquan; Chi, Lingfei; Li, Qiang; Xiao, Tan

    2007-03-01

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO2 and active carbon at 1000 °C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 µm. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiOx nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  1. Growth model of lantern-like amorphous silicon oxide nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wu Ping; Zou Xingquan; Chi Lingfei; Li Qiang; Xiao Tan [Department of Physics, Shantou University, Shantou 515063 (China)

    2007-03-28

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO{sub 2} and active carbon at 1000 deg. C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 {mu}m. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiO{sub x} nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  2. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (production technology for amorphous silicon solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (amorphous taiyo denchi module seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of amorphous Si solar cell modules in fiscal 1994. (1) On process technology for prototype film substrate solar cells, an advanced preprocessing equipment for film substrates, stepping roll type film forming technology, and prototype submodules were studied. A conversion efficiency of 7.2% was achieved by use of the submodule formed in an effective region of 40 {times} 40cm{sup 2}. (2) On efficiency improvement technology for film substrate solar cells, p/i and n/i interfaces, forming condition for Ag film electrodes, film thickness of transparent electrode ITO, and optimum transmissivity were studied. (3) On technology for advanced solar cells, high-quality a-SiGe: H film, ion control in plasma CVD, and a-Si film formation by plasma CVD using SiH2Cl2 were studied as production technology of narrow gap materials. (4) On advanced two-layer tandem solar cells, the defect density in optical degradation of a-Si cells by reverse bias dark current was evaluated, and outdoor exposure data were analyzed. 4 figs., 1 tab.

  3. Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

    Energy Technology Data Exchange (ETDEWEB)

    Barbe, Jeremy, E-mail: jeremy.barbe@hotmail.com [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); Xie, Ling; Leifer, Klaus [Department of Engineering Sciences, Uppsala University, Box 534, S-751 21 Uppsala (Sweden); Faucherand, Pascal; Morin, Christine; Rapisarda, Dario; De Vito, Eric [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Makasheva, Kremena; Despax, Bernard [Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); CNRS, LAPLACE, F-31062 Toulouse (France); Perraud, Simon [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2012-11-01

    The present study demonstrates the growth of silicon nanocrystals on amorphous silicon carbide alloy thin films. Amorphous silicon carbide films [a-Si{sub 1-x}C{sub x}:H (with x < 0.3)] were obtained by plasma enhanced chemical vapor deposition from a mixture of silane and methane diluted in hydrogen. The effect of varying the precursor gas-flow ratio on the film properties was investigated. In particular, a wide optical band gap (2.3 eV) was reached by using a high methane-to-silane flow ratio during the deposition of the a-Si{sub 1-x}C{sub x}:H layer. The effect of short-time annealing at 700 Degree-Sign C on the composition and properties of the layer was studied by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was observed that the silicon-to-carbon ratio in the layer remains unchanged after short-time annealing, but the reorganization of the film due to a large dehydrogenation leads to a higher density of SiC bonds. Moreover, the film remains amorphous after the performed short-time annealing. In a second part, it was shown that a high density (1 Multiplication-Sign 10{sup 12} cm{sup -2}) of silicon nanocrystals can be grown by low pressure chemical vapor deposition on a-Si{sub 0.8}C{sub 0.2} surfaces at 700 Degree-Sign C, from silane diluted in hydrogen. The influence of growth time and silane partial pressure on nanocrystals size and density was studied. It was also found that amorphous silicon carbide surfaces enhance silicon nanocrystal nucleation with respect to SiO{sub 2}, due to the differences in surface chemical properties. - Highlights: Black-Right-Pointing-Pointer Silicon nanocrystals (Si-NC) growth on amorphous silicon carbide alloy thin films Black-Right-Pointing-Pointer Plasma deposited amorphous silicon carbide films with well-controlled properties Black-Right-Pointing-Pointer Study on the thermal effect of 700 Degree-Sign C short-time annealing on the layer properties Black-Right-Pointing-Pointer Low pressure

  4. Photoluminescence in silicon implanted with silicon ions at amorphizing doses

    Energy Technology Data Exchange (ETDEWEB)

    Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Kalyadin, A. E.; Kyutt, R. N.; Sakharov, V. I.; Serenkov, I. T.; Shek, E. I.; Afrosimov, V. V. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Tetel' baum, D. I. [Lobachevsky State University, Physicotechnical Research Institute (Russian Federation)

    2011-09-15

    Luminescent and structural properties of n-FZ-Si and n-Cz-Si implanted with Si ions at amorphizing doses and annealed at 1100 Degree-Sign C in a chlorine-containing atmosphere have been studied. An analysis of proton Rutherford backscattering spectra of implanted samples demonstrated that an amorphous layer is formed, and its position and thickness depend on the implantation dose. An X-ray diffraction analysis revealed that defects of the interstitial type are formed in the samples upon annealing. Photoluminescence spectra measured at 78 K and low excitation levels are dominated by the dislocation-related line D1, which is also observed at 300 K. The peak position of this line, its full width at half-maximum, and intensity depend on the conduction type of Si and implantation dose. As the luminescence excitation power is raised, a continuous band appears in the spectrum. A model is suggested that explains the fundamental aspects of the behavior of the photoluminescence spectra in relation to the experimental conditions.

  5. Enhanced crystallization of amorphous silicon thin films using embedded silicon nanocrystals

    Science.gov (United States)

    Anderson, Curtis Michael

    This thesis is concerned with the production of silicon thin films for photovoltaic applications. Much research has been carried out to find a stable, more efficient alternative to amorphous silicon, resulting in a number of various amorphous/crystalline mixed-phase film structures with properties superior to amorphous silicon. This thesis work details a completely new approach to mixed-phase film deposition, focusing on the fast crystallization of these films. The deposition of amorphous silicon films with embedded nanocrystals was carried out via a dual-plasma system. It is known that plasma conditions to produce high quality films are much different from those to produce particles. Hence the experimental system used here involved two separate plasmas to allow the optimum production of the crystalline nanoparticles and the amorphous film. Both plasmas use 13.56 MHz excitation voltage with diluted silane as the silicon precursor. The nanoparticle production reactor is a flow-through device that can be altered to control the size of the particles from around 5--30 nm average diameter. The film production reactor is a parallel-plate capacitively-coupled plasma system, into which the aerosol-suspended nanoparticles were injected. The nanocrystals could either be "co-deposited" simultaneously with the amorphous film, or be deposited separately in a layer-by-layer technique; both approaches are discussed in detail. Measurements of the film conductivity provide for the first time unambiguous evidence that the presence of nanocrystallites above 5 nm in the amorphous film have a direct impact on the electronic properties of co-deposited films. Further measurements of the film structure by transmission electron microscopy (TEM) and Raman spectroscopy demonstrate clearly the effect of embedded nanocrystals on the annealed crystallization process; the immediate growth of the crystal seeds has been observed. Additionally, a newly discovered mechanism of film crystallization

  6. AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Theuring, Martin, E-mail: martin.theuring@next-energy.de; Vehse, Martin; Maydell, Karsten von; Agert, Carsten

    2014-05-02

    Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes.

  7. Fabrication of silicon molds for polymer optics

    DEFF Research Database (Denmark)

    Nilsson, Daniel; Jensen, Søren; Menon, Aric Kumaran

    2003-01-01

    A silicon mold used for structuring polymer microcavities for optical applications is fabricated, using a combination of DRIE (deep reactive ion etching) and anisotropic chemical wet etching with KOH + IPA. For polymer optical microcavities, low surface roughness and vertical sidewalls are often...

  8. Interference filter with amorphous silicon layer and direct laser recording on it

    Science.gov (United States)

    Kutanov, A.; Sydyk uluu, Nurbek; Snimshikov, I.; Kazakbaeva, Z.

    2016-08-01

    The interference spectral filters with amorphous silicon layer deposited by magnetron sputtering on the reflective metal layer on a glass substrate are developed. Interference filter select from white light source components corresponding to quasimonochromatic wavelength with a narrow bandwidth. The thickness of the amorphous silicon layer determines the center wavelength of the pass band of the filter. It proposed to use interference filter with amorphous silicon layer for direct laser recoding on it. Results on direct laser recording on amorphous silicon layer of the interference filter by single-mode Blu Ray laser (X = 405 nm) with high contrast reflected image are demonstrated.

  9. Grain boundary resistance to amorphization of nanocrystalline silicon carbide

    Science.gov (United States)

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-11-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized.

  10. Recent developments in amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Beneking, C.; Rech, B.; Foelsch, J.; Wagner, H. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Schicht- und Ionentechnik

    1996-03-01

    Two examples of recent advances in the field of thin-film, amorphous hydrogenated silicon (a-Si:H) pin solar cells are described: the improved understanding and control of the p/i interface, and the improvement of wide-bandgap a-Si:H material deposited at low substrate temperature as absorber layer for cells with high stabilized open-circuit voltage. Stacked a-Si:H/a-Si:H cells incorporating these concepts exhibit less than 10% (relative) efficiency degradation and show stabilized efficiencies as high as 9 to 10% (modules 8 to 9%). The use of low-gap a-Si:H and its alloys like a-SiGe:H as bottom cell absorber materials in multi-bandgap stacked cells offers additional possibilities. The combination of a-Si:H based top cells with thin-film crystalline silicon-based bottom cells appears as a promising new trend. It offers the perspective to pass significantly beyond the present landmark of 10% module efficiency reached by the technology utilizing exclusively amorphous silicon-based absorber layers, while keeping its advantages of potentially low-cost production. (orig.) 47 refs.

  11. FTIR study of silicon carbide amorphization by heavy ion irradiations

    Science.gov (United States)

    Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier

    2017-03-01

    We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C–SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C–SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

  12. Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD

    Directory of Open Access Journals (Sweden)

    B. M. Monroy

    2011-01-01

    Full Text Available Silicon nanocrystals embedded in amorphous silicon matrix were obtained by plasma enhanced chemical vapor deposition using dichlorosilane as silicon precursor. The RF power and dichlorosilane to hydrogen flow rate ratio were varied to obtain different crystalline fractions and average sizes of silicon nanocrystals. High-resolution transmission electron microscopy images and RAMAN measurements confirmed the existence of nanocrystals embedded in the amorphous matrix with average sizes between 2 and 6 nm. Different crystalline fractions (from 12% to 54% can be achieved in these films by regulating the selected growth parameters. The global optical constants of the films were obtained by UV-visible transmittance measurements. Effective band gap variations from 1.78 to 2.3 eV were confirmed by Tauc plot method. Absorption coefficients higher than standard amorphous silicon were obtained in these thin films for specific growth parameters. The relationship between the optical properties is discussed in terms of the different internal nanostructures of the samples.

  13. Eigenmode Splitting in all Hydrogenated Amorphous Silicon Nitride Coupled Microcavity

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xian-Gao; HUANG Xin-Fan; CHEN Kun-Ji; QIAN Bo; CHEN San; DING Hong-Lin; LIU Sui; WANG Xiang; XU Jun; LI Wei

    2008-01-01

    Hydrogenated amorphous silicon nitride based coupled optical microcavity is investigated theoretically and experimentally. The theoretical calculation of the transmittance spectra of optical microcavity with one cavity and coupled microcavity with two-cavity is performed.The optical eigenmode splitting for coupled microcavity is found due to the interaction between the neighbouring localized cavities.Experimentally,the coupled cavity samples are prepared by plasma enhanced chemical vapour deposition and characterized by photoluminescence measurements.It is found that the photoluminescence peak wavelength agrees well with the cavity mode in the calculated transmittance spectra.This eigenmode splitting is analogous to the electron state energy splitting in diatom molecules.

  14. Comment on ``Electron drift mobility in doped amorphous silicon''

    Science.gov (United States)

    Overhof, H.; Silver, M.

    1989-05-01

    Experimental drift-mobility data obtained by different methods in doped amorphous silicon are compared. It is shown that the presence of a long-range random potential will lead to a modification of the drift mobility in one experiment while the corresponding values in other experiments are virtually unaffected. It is shown that this effect accounts for the apparent discrepancy between the results of these experiments rather than the shift of the mobility edge upon doping which was recently proposed by Street, Kakalios, and Hack [Phys. Rev. B 38, 5603 (1988)] in order to understand their data.

  15. Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Konagai, M. [Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on interface of amorphous silicon for solar cells. In research on amorphous solar cells using ZnO for transparent electrically conductive films, considerations were given on a growth mechanism of a ZnO film using the MOCVD process. It was made clear that the ZnO film grows with Zn(OH)2 working as a film forming species. It was also shown that the larger the ZnO particle size is, the more the solar cell efficiency is improved. Furthermore, theoretical elucidation was made on effects of rear face of an interface on cell characteristics, and experimental discussions were given subsequently. In research on solar cells using hydrogen diluted `i` layers, delta-doped solar cells were fabricated based on basic data obtained in the previous fiscal year, and the hydrogen dilution effect was evaluated from the cell characteristics. When the hydrogen dilution ratio is increased from zero to one, the conversion efficiency has improved from 12.2% to 12.6%. In addition, experiments and discussions were given on solar cells fabricated by using SiH2Cl2. 9 figs.

  16. Determining the Onset of Amorphization of Crystalline Silicon due to Hypervelocity Impact

    Science.gov (United States)

    Poletti, C. Shane; Bachlechner, Martina E.

    2009-03-01

    Atomistic simulations were performed to study a hypervelocity impactor striking a silicon/silicon nitride interface with varying silicon substrate thicknesses. Visualization indicates that the crystalline silicon amorphizes upon impact. The objective of the present study is to determine where the boundary between amorphous and crystalline silicon occurrs. In the analysis, the silicon substrate is separated into sixty layers and for each layer the average z displacement is determined. Our results show that the boundary between amorphous and crystalline silicon occurs between layers 20 and 22 for an impactor traveling at 5 km/s. This corresponds to a depth of approximately 32 Angstroms into the silicon. More detailed analyses reveals that the z displacement is noticeably larger for the layers that do not have a silicon atom bonded beneath them compared to the ones that do.

  17. Two-dimensional modeling of the back amorphous-crystalline silicon heterojunction (BACH) photovoltaic device

    Science.gov (United States)

    Chowdhury, Zahidur R.; Chutinan, Alongkarn; Gougam, Adel B.; Kherani, Nazir P.; Zukotynski, Stefan

    2010-06-01

    Back Amorphous-Crystalline Silicon Heterojunction (BACH)1 solar cell can be fabricated using low temperature processes while integrating high efficiency features of heterojunction silicon solar cells and back-contact homojunction solar cells. This article presents a two-dimensional modeling study of the BACH cell concept. A parametric study of the BACH cell has been carried out using Sentaurus after benchmarking the software. A detailed model describing the optical generation is defined. Solar cell efficiency of 24.4% is obtained for AM 1.5 global spectrum with VOC of greater than 720 mV and JSC exceeding 40 mA/cm2, considering realistic surface passivation quality and other dominant recombination processes.

  18. Flexible amorphous silicon solar cells and their application to PV systems

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, Y.; Fujikake, S.; Yoshida, T.; Sakai, H.; Natsume, F. [Fuji Electric Co. Ltd., Yokosuka, Kanagawa (Japan). New Energy Lab.

    1996-12-31

    Hydrogenated amorphous silicon (a-Si:H) solar cells are regarded as the next generation product following crystalline silicon (c-Si) solar cells. The performance of the large area cells has been improved to a practical application level and the durability has been confirmed by a number of outdoor tests at demonstration sites under various climatic conditions. The mass production technology for realizing low cost a-Si photovoltaic (PV) modules, however, has not been developed very well and is still in an elementary stage. A flexible a-Si:H PV module has been developed, which is rolled up around a cylindrical core, has a width of about 1 m, and is able to be cut to any length. The amorphous solar cell fabricated on a heat resistant plastic film with a thickness of 50 {mu}m has a new monolithic series connected structure named SCAF (Series-Connection through Apertures formed on Film) to obtain a high output voltage required for practical use. The details of the structure and the technology of the fabrication process are described as well as some of its applications. (author). 11 figs., 3 refs.

  19. Silica nanoparticles on front glass for efficiency enhancement in superstrate-type amorphous silicon solar cells

    Science.gov (United States)

    Das, Sonali; Banerjee, Chandan; Kundu, Avra; Dey, Prasenjit; Saha, Hiranmay; Datta, Swapan K.

    2013-10-01

    Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO2: F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm-2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system.

  20. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    NARCIS (Netherlands)

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

  1. Using amorphous silicon solar cells to boost the viability of luminescent solar concentrators

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, Daniel J. [Physics Department, Imperial College London, South Kensington campus, SW7 2AZ, London (United Kingdom); Sark, Wilfried G.J.H.M. van [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands); Velthuijsen, Steven T.; Schropp, Ruud E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

    2010-04-15

    We have, for the first time, designed and fabricated hydrogenated amorphous silicon solar cells to be used in conjunction with Luminescent Solar Concentrators (LSCs). LSCs are planar plastic sheets doped with organic dyes that absorb solar illumination and down shift the energy to narrowband luminescence which is collected by solar cells attached to the sheet edge. We fabricated an LSC module with two bonded solar cells and performed characterisation with the cells connected in series and parallel configurations. We find that the LSC module has an optical collection efficiency of 9.5% and an optimum power conversion efficiency of approaching 1% when the cells are in a parallel connection. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Layered amorphous silicon as negative electrodes in lithium-ion batteries

    Science.gov (United States)

    Zhao, Leyi; Dvorak, D. J.; Obrovac, M. N.

    2016-11-01

    Chemical delithiation is used to prepare bulk quantities of amorphous silicon powder from lithium-silicon compounds. The amorphous silicon materials formed are air and water stable and are found to have layered structures. When cycled in Li-ion half cells, coatings containing layered amorphous silicon are found to have significantly lower volume expansion during lithiation and improved cycling characteristics compared to that of bulk crystalline Si. We suggest chemical delithiation as a convenient method to synthesize bulk quantities of Si powders containing self-organized void spaces that can accommodate volume expansion during lithiation.

  3. Amorphous Silicon Carbide Passivating Layers to Enable Higher Processing Temperature in Crystalline Silicon Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu [Arizona State Univ., Mesa, AZ (United States); Holman, Zachary [Arizona State Univ., Mesa, AZ (United States)

    2015-04-06

    "Very efficient crystalline silicon (c-Si) solar cells have been demonstrated when thin layers of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) are used for passivation and carrier selectivity in a heterojunction device. One limitation of this device structure is the (parasitic) absorption in the front passivation/collection a-Si:H layers; another is the degradation of the a-Si:H-based passivation upon temperature, limiting the post-processes to approximately 200°C thus restricting the contacting possibilities and potential tandem device fabrication. To alleviate these two limitations, we explore the potential of amorphous silicon carbide (a-SiC:H), a widely studied material in use in standard a-Si:H thin-film solar cells, which is known for its wider bandgap, increased hydrogen content and stronger hydrogen bonding compared to a-Si:H. We study the surface passivation of solar-grade textured n-type c-Si wafers for symmetrical stacks of 10-nm-thick intrinsic a-SiC:H with various carbon content followed by either p-doped or n-doped a-Si:H (referred to as i/p or i/n stacks). For both doping types, passivation (assessed through carrier lifetime measurements) is degraded by increasing the carbon content in the intrinsic a-SiC:H layer. Yet, this hierarchy is reversed after annealing at 350°C or more due to drastic passivation improvements upon annealing when an a-SiC:H layer is used. After annealing at 350°C, lifetimes of 0.4 ms and 2.0 ms are reported for i/p and i/n stacks, respectively, when using an intrinsic a-SiC:H layer with approximately 10% of carbon (initial lifetimes of 0.3 ms and 0.1 ms, respectively, corresponding to a 30% and 20-fold increase, respectively). For stacks of pure a-Si:H material the lifetimes degrade from 1.2 ms and 2.0 ms for i/p and i/n stacks, respectively, to less than 0.1 ms and 1.1 ms (12-fold and 2-fold decrease, respectively). For complete solar cells using pure a-Si:H i/p and i/n stacks, the open-circuit voltage (Voc

  4. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

    Directory of Open Access Journals (Sweden)

    Jia Ge

    2014-01-01

    Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

  5. Similarities in the electrical conduction processes in hydrogenated amorphous silicon oxynitride and silicon nitride

    CERN Document Server

    Kato, H; Ohki, Y; Seol, K S; Noma, T

    2003-01-01

    Electrical conduction at high fields was examined in a series of hydrogenated amorphous silicon oxynitride and silicon nitride films with different nitrogen contents deposited by plasma-enhanced chemical vapour deposition. It was shown that the conduction is attributable to the Poole-Frenkel (PF) emission in the two materials. The energy depths of the PF sites and the dependences on the sample's chemical composition are quite similar for the two samples. It is considered that the PF sites in the two materials are identical.

  6. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  7. Fabrication and Modification of Nanoporous Silicon Particles

    Science.gov (United States)

    Ferrari, Mauro; Liu, Xuewu

    2010-01-01

    Silicon-based nanoporous particles as biodegradable drug carriers are advantageous in permeation, controlled release, and targeting. The use of biodegradable nanoporous silicon and silicon dioxide, with proper surface treatments, allows sustained drug release within the target site over a period of days, or even weeks, due to selective surface coating. A variety of surface treatment protocols are available for silicon-based particles to be stabilized, functionalized, or modified as required. Coated polyethylene glycol (PEG) chains showed the effective depression of both plasma protein adsorption and cell attachment to the modified surfaces, as well as the advantage of long circulating. Porous silicon particles are micromachined by lithography. Compared to the synthesis route of the nanomaterials, the advantages include: (1) the capability to make different shapes, not only spherical particles but also square, rectangular, or ellipse cross sections, etc.; (2) the capability for very precise dimension control; (3) the capacity for porosity and pore profile control; and (4) allowance of complex surface modification. The particle patterns as small as 60 nm can be fabricated using the state-of-the-art photolithography. The pores in silicon can be fabricated by exposing the silicon in an HF/ethanol solution and then subjecting the pores to an electrical current. The size and shape of the pores inside silicon can be adjusted by the doping of the silicon, electrical current application, the composition of the electrolyte solution, and etching time. The surface of the silicon particles can be modified by many means to provide targeted delivery and on-site permanence for extended release. Multiple active agents can be co-loaded into the particles. Because the surface modification of particles can be done on wafers before the mechanical release, asymmetrical surface modification is feasible. Starting from silicon wafers, a treatment, such as KOH dipping or reactive ion

  8. Properties of interfaces in amorphous/crystalline silicon heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Olibet, Sara; Vallat-Sauvain, Evelyne; Fesquet, Luc; Damon-Lacoste, Jerome; De Wolf, Stefaan; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), IMT, Photovoltaics and Thin Film Electronics Laboratory, Breguet 2, 2000 Neuchatel (Switzerland); Monachon, Christian; Hessler-Wyser, Aicha [Ecole Polytechnique Federale de Lausanne (EPFL), Interdisciplinary Centre for Electron Microscopy (CIME), 1015 Lausanne (Switzerland)

    2010-03-15

    To study recombination at the amorphous/crystalline Si (a-Si:H/c-Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechanisms, yielding an excellent interface defect density reduction by intrinsic a-Si:H and tunable field-effect passivation by doped layers. The potential of this model's applicability to recombination at other Si heterointerfaces is demonstrated. Solar cell properties of a-Si:H/c-Si heterojunctions are in good accordance with the microscopic interface properties revealed by modeling, that are, e.g., slight asymmetries in the neutral capture cross-sections and band offsets. The importance of atomically abrupt interfaces and the difficulties to obtain them on pyramidally textured c-Si is studied in combination with transmission electron microscopy. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. Si-H bond dynamics in hydrogenated amorphous silicon

    Science.gov (United States)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  10. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  11. Correlating the properties of amorphous silicon with its flexibility volume

    Science.gov (United States)

    Fan, Zhao; Ding, Jun; Li, Qing-Jie; Ma, Evan

    2017-04-01

    For metallic glasses, "flexibility volume" has recently been introduced as a property-revealing indicator of the structural state the glass is in. This parameter incorporates the atomic volume and the vibrational mean-square displacement, to combine both static structure and dynamics information. Flexibility volume was shown to quantitatively correlate with the properties of metallic glasses [J. Ding et al., Nat. Commun. 7, 13733 (2016), 10.1038/ncomms13733]. However, it remains to be examined if this parameter is useful for other types of glasses with bonding characteristics, atomic packing structures, as well as properties that are distinctly different from metallic glasses. In this paper, we tackle this issue through systematic molecular-dynamics simulations of amorphous silicon (a -Si) models produced with different cooling rates, as a -Si is a prototypical covalently bonded network glass whose structure and properties cannot be characterized using structural parameters such as free volume used for metallic and polymeric glasses. Specifically, we demonstrate a quantitative prediction of the shear modulus of a -Si from the flexibility for atomic motion. This flexibility volume descriptor, when evaluated on the atomic scale, is shown to also correlate well with local packing, as well as with the propensity for thermal relaxations and shear transformations, providing a metric to map out and explain the structural and mechanical heterogeneity in the amorphous material. This case study of a model of covalently bonded network a -Si, together with our earlier demonstration for metallic glasses, points to the universality of flexibility volume as an indicator of the structure state to link with properties, applicable across amorphous materials with different chemical bonding and atomic packing structures.

  12. Advanced Silicone-based Coatings for Flexible Fabric Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — High performance silicone coatings are desired for flexible fabrics used in several space and consumer applications. For instance, the total weight of silicone...

  13. Novel fabrication of silicon carbide based ceramics for nuclear applications

    Science.gov (United States)

    Singh, Abhishek Kumar

    Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

  14. Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

    Institute of Scientific and Technical Information of China (English)

    DING Wen-ge; YU Wei; ZHANG Jiang-yong; HAN Li; FU Guang-sheng

    2006-01-01

    The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the microstructures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

  15. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Directory of Open Access Journals (Sweden)

    Yaser Abdulraheem

    2014-05-01

    Full Text Available An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si wafers by plasma enhanced chemical vapor deposition (PECVD. The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause

  16. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

    2014-05-15

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  17. Systems and Methods for Fabricating Objects Including Amorphous Metal Using Techniques Akin to Additive Manufacturing

    Science.gov (United States)

    Hofmann, Douglas (Inventor)

    2017-01-01

    Systems and methods in accordance with embodiments of the invention fabricate objects including amorphous metals using techniques akin to additive manufacturing. In one embodiment, a method of fabricating an object that includes an amorphous metal includes: applying a first layer of molten metallic alloy to a surface; cooling the first layer of molten metallic alloy such that it solidifies and thereby forms a first layer including amorphous metal; subsequently applying at least one layer of molten metallic alloy onto a layer including amorphous metal; cooling each subsequently applied layer of molten metallic alloy such that it solidifies and thereby forms a layer including amorphous metal prior to the application of any adjacent layer of molten metallic alloy; where the aggregate of the solidified layers including amorphous metal forms a desired shape in the object to be fabricated; and removing at least the first layer including amorphous metal from the surface.

  18. Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique

    Energy Technology Data Exchange (ETDEWEB)

    LeBoeuf, J. L., E-mail: jerome.leboeuf@mail.mcgill.ca; Brodusch, N.; Gauvin, R.; Quitoriano, N. J. [Department of Mining and Materials Engineering, McGill University, Montreal (Canada)

    2014-12-28

    A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor–liquid–solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30% single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the (1 0 0) surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.

  19. Electronic properties of intrinsic and doped amorphous silicon carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Vetter, M. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)]. E-mail: mvetter@eel.upc.edu; Voz, C. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Ferre, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Martin, I. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Orpella, A. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Puigdollers, J. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Andreu, J. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E-08028 Barcelona (Spain); Alcubilla, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)

    2006-07-26

    Hydrogenated amorphous silicon carbide (a-SiC{sub x} : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms{sup -1} is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC{sub x} : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T {sub s}{approx}80 deg. C and T {sub s}{approx}170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E {sub a}) and conductivity pre-factor ({sigma} {sub 0}) were calculated for a large number of samples with different composition. A correlation between E {sub a} and {sigma} {sub 0} was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T {sub m} = 400 deg. C, and an intercept at {sigma} {sub 00} = 0.1 {omega}{sup -1}cm{sup -1}.

  20. The specific heat of pure and hydrogenated amorphous silicon

    Science.gov (United States)

    Queen, Daniel Robert

    At low temperature, amorphous materials have low energy excitations that result in a heat capacity that is in excess of the Debye heat capacity calculated from the sound velocity. These excitations are ubiquitous to the glassy state and occur with roughly the same density for all glasses. The specific heat has a linear temperature dependence below 1K that has been described by the phenomenological two-level systems (TLS) model in addition to a T 3 temperature dependence which is in excess of the T3 Debye specific heat. It is still unknown what exact mechanism gives rise to the TLS but it is assumed that groups of atoms have configurations that are close in energy and, at low temperature, these atoms can change configurations by tunneling through the energy barrier separating them. It has been an open question as to whether tetrahedrally bonded materials, like amorphous silicon, can support TLS due to the over-constrained nature of their bonding. It is shown in this work that amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) have specific heat CP in excess of the Debye specific heat which depends on the details of the growth process. There is a linear term that is due to TLS in addition to an excess T3 contribution. We find that the TLS density depends on number density of atoms in the a-Si film and that the presence of hydrogen in a-Si:H increases CP further. We suggest that regions of low density are sufficiently under-constrained to support tunneling between structural configurations at low temperature as described by the TLS model. The presence of H further lowers the energy barriers for the tunneling process resulting in an increase in TLS density in a-Si:H. The presence of H in a-Si:H network is found to be metastable. Annealing causes H to diffuse away from clustered regions which reduces the density of TLS. A low temperature anomaly is found in the a-Si:H films in their as prepared state that is of unknown origin but appears to take the

  1. Advanced Silicone-based Coatings for Flexible Fabric Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicone coatings are the system of choice for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts,...

  2. Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures.

    Science.gov (United States)

    Hilali, Mohamed M; Yang, Shuqiang; Miller, Mike; Xu, Frank; Banerjee, Sanjay; Sreenivasan, S V

    2012-10-12

    In this paper, we have explored manufacturable approaches to sub-wavelength controlled three-dimensional (3D) nano-patterns with the goal of significantly enhancing the photocurrent in amorphous silicon solar cells. Here we demonstrate efficiency enhancement of about 50% over typical flat a-Si thin-film solar cells, and report an enhancement of 20% in optical absorption over Asahi textured glass by fabricating sub-wavelength nano-patterned a-Si on glass substrates. External quantum efficiency showed superior results for the 3D nano-patterned thin-film solar cells due to enhancement of broadband optical absorption. The results further indicate that this enhanced light trapping is achieved with minimal parasitic absorption losses in the deposited transparent conductive oxide for the nano-patterned substrate thin-film amorphous silicon solar cell configuration. Optical simulations are in good agreement with experimental results, and also show a significant enhancement in optical absorption, quantum efficiency and photocurrent.

  3. On the effect of the amorphous silicon microstructure on the grain size of solid phase crystallized polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kashish; Branca, Annalisa; Illiberi, Andrea; Creatore, Mariadriana; Sanden, Mauritius C.M. van de [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Tichelaar, Frans D. [Kavli Institute of Nanoscience, Delft University of Technology (Netherlands)

    2011-05-15

    In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstructure parameter values R* (which represents the distribution of SiH{sub x} bonds in amorphous silicon), at constant hydrogen content. Amorphous silicon films undergo a phase transformation during solid-phase crystallization and the process results in fully (poly-)crystallized films. An increase in amorphous film structural disorder (i.e., an increase in R*), leads to the development of larger grain sizes (in the range of 700-1100 nm). When the microstructure parameter is reduced, the grain size ranges between 100 and 450 nm. These results point to the microstructure parameter having a key role in controlling the grain size of the polycrystalline silicon films and thus the performance of polycrystalline silicon solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Fabrication of silicon inverse woodpile photonic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Hermatschweiler, Martin; Wegener, Martin [DFG-Center for Functional Nanostructures (CFN) and Institut fuer Angewandte Physik, Universitaet Karlsruhe (TH), 76131 Karlsruhe (Germany); Ozin, Geoffrey A. [Department of Chemistry, University of Toronto, Toronto, Ontario M5S 3H6 (Canada); Ledermann, Alexandra; Freymann, Georg von [Institut fuer Nanotechnologie, Forschungszentrum Karlsruhe in der Helmholtz-Gemeinschaft, 76021 Karlsruhe (Germany)

    2007-07-01

    We fabricate silicon inverse woodpile structures for the first time. Direct laser writing of polymeric templates and a novel silicon-singleinversion procedure lead to structures with gap/midgap ratios of 14.2% centered at 2.5 {mu}m wavelength. First, polymer templates are fabricated by direct laser writing or other means. Next, we deposit a thin silica coating via atomic layer deposition (ALD) on the polymer and - without removing the polymer - infiltrate the composite structure with Si via Si chemical vapor deposition (CVD). The silica shell provides sufficient and reliable stabilization for the high temperature CVD process. Finally, the silica is etched out and the polymer is calcined in air, leading to a Si inverse woodpile structure. Optical measurements and comparison to bandstructure and scattering-matrix calculations reveal a gap/midgap ratio of 14.2% centered at 2.5 {mu}m. An optimized structure could open a band gap with a gap/midgap ratio of up to 20.5%.

  5. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, Jeroen; Berenschot, Erwin; Maury, Pascale; Jansen, Henri

    2006-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7–20 nm wide, 40–100 nm high and centimeters long. All dimensions are easily a

  6. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, Jeroen; Berenschot, Erwin; Maury, Pascale; Jansen, Henri

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily a

  7. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

    Directory of Open Access Journals (Sweden)

    Jiyoon Nam

    2016-01-01

    Full Text Available We demonstrate a compact amorphous silicon (a-Si solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any desired shapes with high areal densities. Using the photolithographic technique, we fabricate a compact a-Si solar module with noticeable photovoltaic characteristics as compared with the reported values for high-voltage power supplies.

  8. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    Science.gov (United States)

    Theodorakos, I.; Zergioti, I.; Vamvakas, V.; Tsoukalas, D.; Raptis, Y. S.

    2014-01-01

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  9. Environmental life cycle assessment of roof-integrated flexible amorphous silicon/nanocrystalline silicon solar cell laminate

    NARCIS (Netherlands)

    N.J. Mohr; A. Meijer; M.A.J. Huijbregts; L. Reijnders

    2013-01-01

    This paper presents an environmental life cycle assessment of a roof-integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a-Si/nc-Si). The a-Si/nc-Si cells are considered to have 10% conversion efficiency. Their expected service life

  10. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

    Directory of Open Access Journals (Sweden)

    P.D. Rybalko

    2016-10-01

    Full Text Available Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

  11. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  12. A fax-machine amorphous silicon sensor for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

    1996-10-01

    Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

  13. Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

    Science.gov (United States)

    Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

    2007-01-01

    Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

  14. Optimization of large amorphous silicon and silica structures for molecular dynamics simulations of energetic impacts

    Energy Technology Data Exchange (ETDEWEB)

    Samela, Juha, E-mail: juha.samela@helsinki.fi [Department of Physics and Helsinki Institute of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Norris, Scott A. [Southern Methodist University, Dallas, TX 75205 (United States); Nordlund, Kai [Department of Physics and Helsinki Institute of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Aziz, Michael J. [School of Engineering and Applied Sciences, Harvard University, 29 Oxford St., Cambridge, MA 02138 (United States)

    2011-07-15

    A practical method to create optimized amorphous silicon and silica structures for molecular dynamics simulations is developed and tested. The method is based on the Wooten, Winer, and Weaire algorithm and combination of small optimized blocks to larger structures. The method makes possible to perform simulations of either very large cluster hypervelocity impacts on amorphous targets or small displacements induced by low energy ion impacts in silicon.

  15. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content. Annual subcontract report, 1 March 1991--31 January 1992

    Energy Technology Data Exchange (ETDEWEB)

    Fortmann, C.M.; Hegedus, S.S. [Institute of Energy Conversion, Newark, DE (United States)

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  16. Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

    Institute of Scientific and Technical Information of China (English)

    Liao Yan-Ping; Shao Xi-Bin; Gao Feng-Li; Luo Wen-Sheng; Wu Yuan; Fu Guo-Zhu; Jing Hai; Ma Kai

    2006-01-01

    Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi2) assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si.The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILCwithout migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.

  17. Piezoresistive effect in top-down fabricated silicon nanowires

    DEFF Research Database (Denmark)

    Reck, Kasper; Richter, Jacob; Hansen, Ole

    2008-01-01

    We have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference...... resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up...

  18. Fabricating Zr-Based Bulk Metallic Glass Microcomponent by Suction Casting Using Silicon Micromold

    Directory of Open Access Journals (Sweden)

    Zhijing Zhu

    2014-08-01

    Full Text Available A suction casting process for fabricating Zr55Cu30Al10Ni5 bulk metallic glass microcomponent using silicon micromold has been studied. A complicated BMG microgear with 50 μm in module has been cast successfully. Observed by scanning electron microscopy and laser scanning confocal microscopy, we find that the cast microgear duplicates the silicon micromold including the microstructure on the surface. The amorphous state of the microgear is confirmed by transmission election microscopy. The nanoindentation hardness and elasticity modulus of the microgear reach 6.5 GPa and 94.5 GPa. The simulation and experimental results prove that the suction casting process with the silicon micromold is a promising one-step method to fabricate bulk metallic glass microcomponents with high performance for applications in microelectromechanical system.

  19. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    Science.gov (United States)

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  20. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  1. Experiment and Simulation Study on the Amorphous Silicon Photovoltaic Walls

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2014-01-01

    Full Text Available Based on comparative study on two amorphous silicon photovoltaic walls (a-Si PV walls, the temperature distribution and the instant power were tested; and with EnergyPlus software, similar models of the walls were built to simulate annual power generation and air conditioning load. On typical sunshine day, the corresponding position temperature of nonventilated PV wall was generally 0.5~1.5°C higher than that of ventilated one, while the power generation was 0.2%~0.4% lower, which was consistent with the simulation results with a difference of 0.41% in annual energy output. As simulation results, in summer, comparing the PV walls with normal wall, the heat per unit area of these two photovoltaic walls was 5.25 kWh/m2 (nonventilated and 0.67 kWh/m2 (ventilated higher, respectively. But in winter the heat loss of nonventilated one was smaller, while ventilated PV wall was similar to normal wall. To annual energy consumption of heating and cooling, the building with ventilated PV wall and normal wall was also similar but slightly better than nonventilated one. Therefore, it is inferred that, at low latitudes, such as Zhuhai, China, air gap ventilation is suitable, while the length to thickness ratio of the air gap needs to be taken into account.

  2. Effects of relaxation on the energy landscape of amorphous silicon

    Science.gov (United States)

    Kallel, Houssem; Mousseau, Normand; Schiettekatte, Francois

    2008-03-01

    Amorphous silicon is used in many devices around us, included as a thin-film transistor in most flat screens, it also serves as the reference for the study of disordered network systems. Recently, differential scanning calorimetry and nanocalorimetry measurements (DSC) ^1 have shown that the heat released as the temperature of the sample is raised following implantation, is temperature independent. To understand this behaviour, we characterize the energy landscape of model a-Si. Using the activation-relaxation technique (ART nouveau) with the modified Stillinger-Weber potential, we generate models at four levels of relaxation and identify the relaxation mechanisms by analysing 100 000 events for each model. We find that while the distribution of the activation barriers shifts to higher energy as the system is relaxed, the distribution of the relaxation energies is almost unchanged. The relation between these two phenomena is consistent with the DSC measurements. This work is supported, in part, by NSERC, FQRNT and the CRC Foundation. HK is grateful for a scholarship from the Tunisian Ministry of Higher Education, Scientific Research and Technology. ^1 R. Karmouch et al., Phys. Rev. B 75, 075304 (2007)

  3. Hydrogenated amorphous silicon thin film anode for proton conducting batteries

    Science.gov (United States)

    Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

    2016-01-01

    Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

  4. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    Science.gov (United States)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  5. Diffusion of Gold and Platinum in Amorphous Silicon

    CERN Multimedia

    Voss, T L

    2002-01-01

    By means of radiotracer experiments the diffusion of Au and Pt in radio-frequency-sputtered amorphous silicon (a-Si) was investigated. Specimens of a-Si with homogeneous doping concentrations of Au or Pt in the range 0$\\, - \\,$1,7~at.\\% were produced by co-sputtering of Si and Au or Pt, respectively. An additional tiny concentration of radioactive $^{195}$Au or $^{188}$Pt, about 10~at.ppm, was implanted at ISOLDE. The resulting Gaussian distribution of the implanted atoms served as a probe for measuring diffusion coefficients at various doping concentrations. It was found that for a given doping concentration the diffusion coefficients show Arrhenius-type temperature dependences, where the diffusion enthalpy and the pre-exponential factor depend on the doping concentration. From these results it was concluded that in a-Si Au and Pt undergo direct, interstitial-like diffusion that is retarded by temporary trapping of the radiotracer atoms at vacancy-type defects with different binding enthalpies. In the case o...

  6. Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Newby, Pascal J. [Institut des Nanotechnologies de Lyon, Universite de Lyon, INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne 69621 (France); Institut Interdisciplinaire d' Innovation Technologique (3IT), Universite de Sherbrooke, CNRS UMI-LN2, Sherbrooke, Quebec J1K0A5 (Canada); Canut, Bruno; Bluet, Jean-Marie; Lysenko, Vladimir [Institut des Nanotechnologies de Lyon, Universite de Lyon, INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne 69621 (France); Gomes, Severine [Centre de Thermique de Lyon, Universite de Lyon, CETHIL-UMR5008, CNRS, INSA de Lyon, Villeurbanne 69621 (France); Isaiev, Mykola; Burbelo, Roman [Faculty of Physics, Taras Shevchenko National University of Kyiv, 64/13, Volodymyrs' ka St., Kyiv 01601 (Ukraine); Termentzidis, Konstantinos [Laboratoire LEMTA, Universite de Lorraine-CNRS UMR 7563, 54506 Vandoeuvre-les-Nancy cedex (France); Chantrenne, Patrice [Universite de Lyon, INSA de Lyon, MATEIS-UMR CNRS 5510, Villeurbanne 69621 (France); Frechette, Luc G. [Institut Interdisciplinaire d' Innovation Technologique (3IT), Universite de Sherbrooke, CNRS UMI-LN2, Sherbrooke, Quebec J1K0A5 (Canada)

    2013-07-07

    In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first time such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 Degree-Sign C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.

  7. Preparation of fine silicon particles from amorphous silicon monoxide by the disproportionation reaction

    Science.gov (United States)

    Mamiya, Mikito; Takei, Humihiko; Kikuchi, Masae; Uyeda, Chiaki

    2001-07-01

    Fine Si particles have been prepared by the disproportionation reaction of silicon monoxide (SiO), that is: 2SiO→Si+SiO 2. Amorphous powders of SiO are heated between 900°C and 1400°C in a flow of Ar and the obtained specimens are analyzed by X-ray powder diffraction and high-resolution transmission electron microscopy. The treatments between 1000°C and 1300°C for more than 0.5 h result in origination of Si particles dispersed in amorphous oxide media. The particle size varies from 1-3 to 20-40 nm, depending on the heating temperature. Kinetic analyses of the reaction reveal that the activation energy is 1.1 eV (82.1 kJ mol -1). The specimens annealed above 1350°C changes into a mixture of Si and cristobalite, suggesting a solid state transformation in the surrounding oxides from the amorphous to crystalline states.

  8. Realistic inversion of diffraction data for an amorphous solid: The case of amorphous silicon

    Science.gov (United States)

    Pandey, Anup; Biswas, Parthapratim; Bhattarai, Bishal; Drabold, D. A.

    2016-12-01

    We apply a method called "force-enhanced atomic refinement" (FEAR) to create a computer model of amorphous silicon (a -Si) based upon the highly precise x-ray diffraction experiments of Laaziri et al. [Phys. Rev. Lett. 82, 3460 (1999), 10.1103/PhysRevLett.82.3460]. The logic underlying our calculation is to estimate the structure of a real sample a -Si using experimental data and chemical information included in a nonbiased way, starting from random coordinates. The model is in close agreement with experiment and also sits at a suitable energy minimum according to density-functional calculations. In agreement with experiments, we find a small concentration of coordination defects that we discuss, including their electronic consequences. The gap states in the FEAR model are delocalized compared to a continuous random network model. The method is more efficient and accurate, in the sense of fitting the diffraction data, than conventional melt-quench methods. We compute the vibrational density of states and the specific heat, and we find that both compare favorably to experiments.

  9. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

    Science.gov (United States)

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca i.; Kleider, Jean-Paul; Yao, Fei; Lee, Young Hee

    2016-10-01

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq-1 to 1260 Ω sq-1 for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm2 V-1 s-1 indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  10. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    Science.gov (United States)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  11. Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

    KAUST Repository

    Ramadan, Khaled S.

    2013-02-08

    This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF2, which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using ;-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 m) and thick (130 m). The process was tested fabricating MEMS switches, capacitors and thermal actuators. © 2013 IOP Publishing Ltd.

  12. Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

    NARCIS (Netherlands)

    Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

    2008-01-01

    The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

  13. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres [Research School of Engineering, The Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  14. Performance improvement in amorphous silicon based uncooled microbolometers through pixel design and materials development

    Science.gov (United States)

    Ajmera, Sameer; Brady, John; Hanson, Charles; Schimert, Tom; Syllaios, A. J.; Taylor, Michael

    2011-06-01

    Uncooled amorphous silicon microbolometers have been established as a field-worthy technology for a broad range of applications where performance and form factor are paramount, such as soldier-borne systems. Recent developments in both bolometer materials and pixel design at L-3 in the 17μm pixel node have further advanced the state-of-the-art. Increasing the a-Si material temperature coefficient of resistance (TCR) has the impact of improving NETD sensitivity without increasing thermal time constant (TTC), leading to an improvement in the NETD×TTC product. By tuning the amorphous silicon thin-film microstructure using hydrogen dilution during deposition, films with high TCR have been developed. The electrical properties of these films have been shown to be stable even after thermal cycling to temperatures greater than 300oC enabling wafer-level vacuum packaging currently performed at L-3 to reduce the size and weight of the vacuum packaged unit. Through appropriate selection of conditions during deposition, amorphous silicon of ~3.4% TCR has been integrated into the L-3 microbolometer manufacturing flow. By combining pixel design enhancements with improvements to amorphous silicon thin-film technology, L-3's amorphous silicon microbolometer technology will continue to provide the performance required to meet the needs to tomorrow's war-fighter.

  15. Phosphorus- and boron-doped hydrogenated amorphous silicon films prepared using vaporized liquid cyclopentasilane

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, 923-1292 (Japan); Takagishi, Hideyuki; Shen, Zhongrong; Ohdaira, Keisuke; Shimoda, Tatsuya [Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, 923-1292 (Japan); Japan Science and Technology Agency, ALCA, Nomi, Ishikawa, 923-1211 (Japan)

    2015-08-31

    A simple, inexpensive method for fabricating a hydrogenated amorphous silicon (a-Si:H) film using thermal chemical vapor deposition from cyclopentasilane (CPS) at atmospheric pressure with a substrate temperature of 370 °C is described. The reactant gas was generated from liquid CPS by vaporization in the deposition chamber. The vaporized CPS gas was transformed immediately into a-Si:H film on a heated substrate. The a-Si:H films could be doped either n- or p-type by dissolving appropriate amounts of white phosphorus or decaborane, respectively, in the liquid CPS before vaporization. This process allows deposition of doped a-Si:H films of photovoltaic device-quality without the need for handling, storage, or transportation of large amounts of gaseous reactants. - Highlights: • B and P doped a-Si:H films made from liquid materials is presented. • Decaborane and white phosphorus is dissolved in the liquid materials. • A simple, inexpensive method for fabricating a-Si:H films using non-vacuum process. • The doped a-Si:H films with usable quality for photovoltaic devices are deposited.

  16. Amorphous Silicon Single-Junction Thin-Film Solar Cell Exceeding 10% Efficiency by Design Optimization

    Directory of Open Access Journals (Sweden)

    Mohammed Ikbal Kabir

    2012-01-01

    Full Text Available The conversion efficiency of a solar cell can substantially be increased by improved material properties and associated designs. At first, this study has adopted AMPS-1D (analysis of microelectronic and photonic structures simulation technique to design and optimize the cell parameters prior to fabrication, where the optimum design parameters can be validated. Solar cells of single junction based on hydrogenated amorphous silicon (a-Si:H have been analyzed by using AMPS-1D simulator. The investigation has been made based on important model parameters such as thickness, doping concentrations, bandgap, and operating temperature and so forth. The efficiency of single junction a-Si:H can be achieved as high as over 19% after parametric optimization in the simulation, which might seem unrealistic with presently available technologies. Therefore, the numerically designed and optimized a-SiC:H/a-SiC:H-buffer/a-Si:H/a-Si:H solar cells have been fabricated by using PECVD (plasma-enhanced chemical vapor deposition, where the best initial conversion efficiency of 10.02% has been achieved ( V,  mA/cm2 and for a small area cell (0.086 cm2. The quantum efficiency (QE characteristic shows the cell’s better spectral response in the wavelength range of 400 nm–650 nm, which proves it to be a potential candidate as the middle cell in a-Si-based multijunction structures.

  17. Core-shell amorphous silicon-carbon nanoparticles for high performance anodes in lithium ion batteries

    Science.gov (United States)

    Sourice, Julien; Bordes, Arnaud; Boulineau, Adrien; Alper, John P.; Franger, Sylvain; Quinsac, Axelle; Habert, Aurélie; Leconte, Yann; De Vito, Eric; Porcher, Willy; Reynaud, Cécile; Herlin-Boime, Nathalie; Haon, Cédric

    2016-10-01

    Core-shell silicon-carbon nanoparticles are attractive candidates as active material to increase the capacity of Li-ion batteries while mitigating the detrimental effects of volume expansion upon lithiation. However crystalline silicon suffers from amorphization upon the first charge/discharge cycle and improved stability is expected in starting with amorphous silicon. Here we report the synthesis, in a single-step process, of amorphous silicon nanoparticles coated with a carbon shell (a-Si@C), via a two-stage laser pyrolysis where decomposition of silane and ethylene are conducted in two successive reaction zones. Control of experimental conditions mitigates silicon core crystallization as well as formation of silicon carbide. Auger electron spectroscopy and scanning transmission electron microscopy show a carbon shell about 1 nm in thickness, which prevents detrimental oxidation of the a-Si cores. Cyclic voltammetry demonstrates that the core-shell composite reaches its maximal lithiation during the first sweep, thanks to its amorphous core. After 500 charge/discharge cycles, it retains a capacity of 1250 mAh.g-1 at a C/5 rate and 800 mAh.g-1 at 2C, with an outstanding coulombic efficiency of 99.95%. Moreover, post-mortem observations show an electrode volume expansion of less than 20% and preservation of the nanostructuration.

  18. Effect of light trapping in an amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Iftiquar, S.M., E-mail: iftiquar@skku.edu [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Juyeon; Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, Jaehyun; Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jinjoo [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Bong, Sungjae [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Sunbo [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-07-31

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V{sub oc}) of 0.87, 0.90 V, short circuit current densities (J{sub sc}) of 14.2, 15.36 mA/cm{sup 2} respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d{sub i}) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d{sub i} while the V{sub oc} and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d{sub i} = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J{sub sc} and red response of the external quantum efficiency to 16.6 mA/cm{sup 2} and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J{sub sc} increases and V{sub oc} decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J{sub sc} improved from 15.4 mA/cm{sup 2} to 16.6 mA/cm{sup 2} due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE.

  19. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

    Directory of Open Access Journals (Sweden)

    Michael A. Marrs

    2016-07-01

    Full Text Available Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  20. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    Science.gov (United States)

    Marrs, Michael A; Raupp, Gregory B

    2016-07-26

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  1. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

    Science.gov (United States)

    Marrs, Michael A.; Raupp, Gregory B.

    2016-01-01

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

  2. Infrared Insight into the Network of Hydrogenated Amorphous and Polycrystalline Silicon thin Films

    Directory of Open Access Journals (Sweden)

    Jarmila Mullerova

    2006-01-01

    Full Text Available IR measurements were carried out on both amorphous and polycrystalline silicon samples deposited by PECVDon glass substrate. The transition from amorphous to polycrystalline phase was achieved by increasing dilution of silaneplasma at the deposition process. The samples were found to be mixed phase materials. Commonly, infrared spectra ofhydrogenated silicon thin films yield information about microstructure, hydrogen content and hydrogen bonding to silicon. Inthis paper, additional understanding was retrieved from infrared response. Applying standard optical laws, effective mediatheory and Clausius-Mossoti approach concerning the Si-Si and Si-H bonds under IR irradiation as individual oscillators,refractive indices in the long wavelength limit, crystalline, amorphous and voids volume fractions and the mass density of thefilms were determined. The mass density was found to decrease with increasing crystalline volume fraction, which can beattributed to the void-dominated mechanism of network formation.

  3. Photoemission studies of amorphous silicon induced by P + ion implantation

    Science.gov (United States)

    Petö, G.; Kanski, J.

    1995-12-01

    An amorphous Si layer was formed on a Si (1 0 0) surface by P + implantation at 80 keV. This layer was investigated by means of photoelectron spectroscopy. The resulting spectra are different from earlier spectra on amorphous Si prepared by e-gun evaporation or cathode sputtering. The differences consist of a decreased intensity in the spectral region corresponding to p-states, and appearace of new states at higher binding energy. Qualitativity similar results have been reported for Sb implanted amorphous Ge and the modification seems to be due to the changed short range order.

  4. In situ observation of shear-driven amorphization in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

    2016-09-19

    Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in the newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.

  5. Amorphization of silicon induced by nanodroplet impact: A molecular dynamics study

    Science.gov (United States)

    Saiz, Fernan; Gamero-Castaño, Manuel

    2012-09-01

    The hypervelocity impact of electrosprayed nanodroplets on crystalline silicon produces an amorphous layer with a thickness comparable to the droplet diameters. The phase transition is puzzling considering that amorphization has not been observed in macroscopic shock compression of silicon, the only apparent difference being the several orders of magnitude disparity between the sizes of the macroscopic and nanodroplet projectiles. This article investigates the physics of the amorphization by modeling the impact of a nanodrop on single-crystal silicon via molecular dynamics. The simulation shows that the amorphization results from the heating and subsequent melting of a thin layer of silicon surrounding the impact area, followed by an ultrafast quenching with cooling rates surpassing 1013 K/s. These conditions impede crystalline growth in the supercooled liquid phase, which finally undergoes a glass transition to render a disordered solid phase. The high temperature field near the impact interface is a localized effect. The significantly different temperatures and cooling rates near the surface and in the bulk explain why amorphization occurs in nanodroplet impact, while it is absent in macroscopic shock compression. Since these high temperatures and ultrafast quenching rates are likely to occur in other materials, nanodroplet impact may become a general amorphatization technique for treating the surfaces of most crystalline substrates.

  6. Light Entrapping, Modeling & Effect of Passivation on Amorphous Silicon Based PV Cell

    OpenAIRE

    Md Mostafizur Rahman; Md. Moidul Islam; Mission Kumar Debnath; Saifullah, S.M.; Samera Hossein; Nusrat Jahan Bristy

    2016-01-01

    This research paper present efforts to enhance the performance of amorphous silicon p-i-n type solar cell using sidewall passivation. For sidewall passivation, MEMS insulation material Al2O3 was used. The main objective of this paper is to observe the effect of sidewall passivation in amorphous silicon solar cell and increase the conversion efficiency of the solar cell. Passivation of Al2O3 is found effective to subdue reverse leakage. It increases the electric potential generated in the desi...

  7. Origin of the ESR signal with g=2.0055 in amorphous silicon

    OpenAIRE

    1990-01-01

    Defect-state wave functions for threefold- and fivefold-coordinated Si atoms in amorphous silicon clusters have been calculated with use of a first-principles linear combination of the atomic orbitals method in order to clarify the origin of the ESR signal with g=2.0055 in amorphous silicon. The wave function of the defect state originating from the threefold-coordinated Si atom is strongly localized on this atom. On the other hand, that for the fivefold-coordinated Si atom is extended on thi...

  8. Elastic behavior of amorphous-crystalline silicon nanocomposite: An atomistic view

    Science.gov (United States)

    Das, Suvankar; Dutta, Amlan

    2017-01-01

    In the context of mechanical properties, nanocomposites with homogeneous chemical composition throughout the matrix and the dispersed phase are of particular interest. In this study, the elastic moduli of amorphous-crystalline silicon nanocomposite have been estimated using atomistic simulations. A comparison with the theoretical model reveals that the elastic behavior is significantly influenced by the crystal-amorphous interphase. On observing the effect of volume-fraction of the crystalline phase, an anomalous trend for the bulk modulus is obtained. This phenomenon is attributed to the relaxation displacements of the amorphous atoms.

  9. Anode properties of silicon-rich amorphous silicon suboxide films in all-solid-state lithium batteries

    Science.gov (United States)

    Miyazaki, Reona; Ohta, Narumi; Ohnishi, Tsuyoshi; Takada, Kazunori

    2016-10-01

    This paper reports the effects of introducing oxygen into amorphous silicon films on their anode properties in all-solid-state lithium batteries. Although poor cycling performance is a critical issue in silicon anodes, it has been effectively improved by introducing even a small amount of oxygen, that is, even in Si-rich amorphous silicon suboxide (a-SiOx) films. Because of the small amount of oxygen in the films, high cycling performance has been achieved without lowering the capacity and power density: an a-Si film delivers discharge capacity of 2500 mAh g-1 under high discharge current density of 10 mA cm-2 (35 C). These results demonstrate that a-SiOx is a promising candidate for high-capacity anode materials in solid-state batteries.

  10. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  11. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  12. Femtosecond laser-controlled self-assembly of amorphous-crystalline nanogratings in silicon

    Science.gov (United States)

    Puerto, Daniel; Garcia-Lechuga, Mario; Hernandez-Rueda, Javier; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2016-07-01

    Self-assembly (SA) of molecular units to form regular, periodic extended structures is a powerful bottom-up technique for nanopatterning, inspired by nature. SA can be triggered in all classes of solid materials, for instance, by femtosecond laser pulses leading to the formation of laser-induced periodic surface structures (LIPSS) with a period slightly shorter than the laser wavelength. This approach, though, typically involves considerable material ablation, which leads to an unwanted increase of the surface roughness. We present a new strategy to fabricate high-precision nanograting structures in silicon, consisting of alternating amorphous and crystalline lines, with almost no material removal. The strategy can be applied to static irradiation experiments and can be extended into one and two dimensions by scanning the laser beam over the sample surface. We demonstrate that lines and areas with parallel nanofringe patterns can be written by an adequate choice of spot size, repetition rate and scan velocity, keeping a constant effective pulse number (N eff) per area for a given laser wavelength. A deviation from this pulse number leads either to inhomogeneous or ablative structures. Furthermore, we demonstrate that this approach can be used with different laser systems having widely different wavelengths (1030 nm, 800 nm, 400 nm), pulse durations (370 fs, 100 fs) and repetition rates (500 kHz, 100 Hz, single pulse) and that the grating period can also be tuned by changing the angle of laser beam incidence. The grating structures can be erased by irradiation with a single nanosecond laser pulse, triggering recrystallization of the amorphous stripes. Given the large differences in electrical conductivity between the two phases, our structures could find new applications in nanoelectronics.

  13. Physics and technology of amorphous-crystalline heterostructure silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sark, Wilfried G.J.H.M. van [Utrecht Univ. (Netherlands). Copernicus Institute, Science Technology and Society; Roca, Francesco [Unita Tecnologie Portici, Napoli (Italy). ENEA - Agenzia Nazionale per le Nuove Tecnologie, l' Energia e lo Sviluppo Economico Sostenibile; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie (Germany). Inst. Silizium-Photovoltaik

    2012-07-01

    The challenge of developing photovoltaic (PV) technology to a cost-competitive alternative for established energy sources can be achieved using simple, high-throughput mass-production compatible processes. Issues to be addressed for large scale PV deployment in large power plants or in building integrated applications are enhancing the performance of solar energy systems by increasing solar cell efficiency, using low amounts of materials which are durable, stable, and abundant on earth, and reducing manufacturing and installation cost. Today's solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both ''emitter'' and ''base-contact/back surface field'' on both sides of a thin crystalline silicon wafer-base (c-Si) where the photogenerated electrons and holes are generated; at the same time, a Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. (orig.)

  14. Fabricating solar cells with silicon nanoparticles

    Science.gov (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  15. Fabrication and microstructure of Fe-based amorphous composite coatings by laser cladding

    Institute of Scientific and Technical Information of China (English)

    Zhu Qingjun; Zou Zengda; Qu Shiyao; Wang Xinhong

    2008-01-01

    Fe-based amorphous composite coatings were fabricated on AISI 1045 steel by laser cladding. The results of the X-ray diffraction and transmission electron microscopy analyses show the coating is composed of an amorphous phase in majority and a nanocrystalline phase in minority. Phase composition of the coating changes along the depth of the coating. The reasonable scanning speed for fabricating an amorphous composite coating is 3 500mm/min when the laser power is 4 800W and the laser beam diameter is 2mm. If the scanning speed is lower than 3 500mm/min, the intensity of the two main diffraction peaks in X-ray diffraction patterns of the coatings decreases with the scanning speeds increasing. At the same time, a broad halo peak emerges and enlarges. High laser power and fast scanning speed are the essential conditions of amorphization. The coating exhibits high microhardness.

  16. Research on fabricating Fe base amorphous alloy by bar plasma spraying

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Since amorphous alloys have wider application, they can not be fabricated using the conventional cooling velocity. The bar material plasma spraying is adopted to fabricate Fe base amorphous alloy in this investigation. The crystallization degree, microstructure, micro-hardness, composition, crystallization temperature of the amorphous alloy and the flying rules of the atomized particles in the process of the plasma spray are tested. The results show that the alloy prepared has the high amorphous degree and homogeneous microstructure, micro-hardness and the crystallization temperature can reach 1187HV and 531℃ respectively. The atomization is very well during the process of plasma spraying; and there is high thermal gradient, the cooling velocity reaches 6.07×107K/s.

  17. Improvement of small-area, amorphous-silicon thin-film photovoltaics on polymer substrate

    Energy Technology Data Exchange (ETDEWEB)

    Weber, M.F. (Minnesota Mining and Mfg. Co., St. Paul, MN (USA). Applied Technologies Lab.)

    1990-02-01

    This report describes a contract to produce, using roll-to-roll deposition on polyamide substrate, a small-area amorphous-silicon p-i-n photovoltaic (PV) cell with an energy conversion efficiency of 10% under air mass 1.5 insolation. Three improvements were attempted to achieve this goal: (1) zinc oxide, a transparent conducting oxide, was used as a top contact; the zinc oxide conductivity was improved to 8--9 ohms/square sheet resistance with less than 8% average optical absorption. (2) The red light response was improved with dielectric enhanced metal reflecting electrodes, which increased the short-circuit current density by more than 1 mA/Cm{sup 2}; a three-layer dielectric mirror coating was also designed that can increase the current density by another 1 mA/cm{sup 2}. (3) Improving the fill factor of the n-i-p (reverse structured) devices was also achieved in a multichamber deposition system. The overall energy conversion efficiency of the PV cell was 8.36%. Major obstacles to higher efficiencies are (1) controlling the thin-film defects that cause electrical shunts in devices fabricated on enhanced reflection electrodes, and (2) controlling impurities and introducing dopant profiles near the p/i interface in a continuous web deposition system.

  18. Memory effect in MOS structures containing amorphous or crystalline silicon nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Sebastian; Brueggemann, Rudolf; Bauer, Gottfried Heinrich [Institute of Physics, Carl von Ossietzky University Oldenburg, D-26111 Oldenburg (Germany); Nedev, Nicola [Istituto de Ingenieria, Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California (Mexico); Manolov, Emmo; Nesheva, Diana; Levi, Zelma [Insitute of Solid State Physics, Bulgarian Academy of Science, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria)

    2008-07-01

    Amorphous and crystalline silicon nanoparticles (Si-NPs) embedded in a SiO{sub 2} matrix are fabricated by thermal annealing of Metal/SiO{sub 2}/SiO{sub x}/c-Si structures (x=1.15) at 700 C or 1000 C in N{sub 2} atmosphere for 30 or 60 minutes. High frequency C-V measurements show that the samples can be charged negatively or positively by applying a positive or negative bias voltage to the gate. A memory effect, due to the Si-NPs in the SiO{sub 2} matrix, is observed. The method of measurement with open circuit between two measurements leads to the retention characteristic where the structures retain about 50% of negative charge trapped in Si-NPs for 24 hours. A second method, where the flat-band voltage is applied as bias voltage, shows shorter retention characteristics. There the Si-NPs retain 50% of their charge after 10 hours.

  19. Amorphization of silicon by bombardment with oxygen ions of energy below 5 keV

    Energy Technology Data Exchange (ETDEWEB)

    Zhukovskii, P.V.; Stel' makh, V.F.; Tkachev, V.D.

    1977-04-01

    Silicon was bombarded with /sup 16/O/sup +/ ions of 1.0 and 3.0 keV energies at room temperature. This bombardment created point defects which joined up to form amorphous layers about 100 A thick. (AIP)

  20. Amorphous silicon solar cells on natively textured ZnO grown by PECVD

    NARCIS (Netherlands)

    Löffler, J.; Groenen, R.; Linden, J.L.; Sanden, M.C.M. van de; Schropp, R.E.I.

    2001-01-01

    Natively textured ZnO layers deposited by the expanding thermal plasma CVD technique between 150 and 350°C at a deposition rate between 0.65 and 0.75 nm/s have been investigated with respect to their suitability as front electrode material for amorphous silicon pin solar cells in comparison to refer

  1. Photoselective Metal Deposition on Amorphous Silicon p-i-n Solar Cells

    NARCIS (Netherlands)

    Kooij, E.S.; Hamoumi, M.; Kelly, J.J.; Schropp, R.E.I.

    1997-01-01

    A novel method is described for the patternwise metallization of amorphous silicon solar cells, based on photocathodic deposition. The electric field of the p-i-n structure is used for the separation of photogenerated charge carriers. The electrons are driven to the interface of the n+-layer with th

  2. Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2007-07-01

    We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs.

  3. Four-wave mixing Bragg scattering in hydrogenated amorphous silicon waveguides.

    Science.gov (United States)

    Li, Kangmei; Sun, Hongcheng; Foster, Amy C

    2017-04-15

    We demonstrate 15% on-chip conversion efficiency of four-wave mixing Bragg scattering in a hydrogenated amorphous silicon waveguide with only 55 and 194 mW peak pump powers in the waveguide. The lightwaves can be maintained in the telecommunication band, and the operational bandwidth is measured to be larger than 4 nm.

  4. Light Entrapping, Modeling & Effect of Passivation on Amorphous Silicon Based PV Cell

    Directory of Open Access Journals (Sweden)

    Md. Mostafizur Rahman

    2016-07-01

    Full Text Available This research paper present efforts to enhance the performance of amorphous silicon p-i-n type solar cell using sidewall passivation. For sidewall passivation, MEMS insulation material Al2O3 was used. The main objective of this paper is to observe the effect of sidewall passivation in amorphous silicon solar cell and increase the conversion efficiency of the solar cell. Passivation of Al2O3 is found effective to subdue reverse leakage. It increases the electric potential generated in the designed solar cell. It also increases the current density generated in the solar cell by suppressing the leakage. Enhancement in J-V curve was observed after adding sidewall passivation. The short circuit current density (Jsc increased from 14.7 mA/cm2 to 18.5 mA/cm2, open circuit voltage (Voc improved from 0.87 V to 0.89 V, and the fill factor also slightly increased. Due to the sidewall of passivation of Al2O3, conversion efficiency of amorphous silicon solar cell increased by 29.07%. At the end, this research was a success to improve the efficiency of the amorphous silicon solar cell by adding sidewall passivation.

  5. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

    Science.gov (United States)

    Sharp, Kenneth G.; D'Errico, John J.

    1988-01-01

    The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

  6. Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, 28040 Madrid (Spain); Ferrando, A. [CIEMAT, 28040 Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, 28040 Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria (IFCA), CSIC-University of Cantabria Santander (Spain)] (and others)

    2008-08-11

    We present the measured performance of a new generation of large sensitive area (28x28 mm{sup 2}) semitransparent amorphous silicon position detector sensors. More than 100 units have been characterized. They show a very high performance. To illustrate a multipoint application, we present results from the monitoring of five sensors placed in a 5.5-m-long light path.

  7. Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A., E-mail: antonio.ferrando@ciemat.e [CIEMAT, Madrid (Spain); Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain)

    2010-12-01

    This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90{sup o} using a pentaprism.

  8. Construction process and read-out electronics of amorphous silicon position detectors for multipoint alignment monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, C.; Schubert, M.B.; Lutz, B.; Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F. [Instituto de Fisica de Cantabria IFCA/CSIC-University of Cantabria, Santander (Spain)] (and others)

    2009-09-01

    We describe the construction process of large-area high-performance transparent amorphous silicon position detecting sensors. Details about the characteristics of the associated local electronic board (LEB), specially designed for these sensors, are given. In addition we report on the performance of a multipoint alignment monitoring application of 12 sensors in a 13 m long light path.

  9. Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells

    NARCIS (Netherlands)

    Kind, R.; Van Swaaij, R.A.C.M.M.; Rubinelli, F.A.; Solntsev, S.; Zeman, M.

    2011-01-01

    The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate

  10. A comparison of degradation in three amorphous silicon PV module technologies

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C.; van Dyk, E.E. [Physics Department, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2010-03-15

    Three commercial amorphous silicon modules manufactured by monolithic integration and consisting of three technology types were analysed in this study. These modules were deployed outdoors for 14 months and underwent degradation. All three modules experienced the typical light-induced degradation (LID) described by the Staebler-Wronski effect, and this was followed by further degradation. A 14 W single junction amorphous silicon module degraded by about 45% of the initial measured maximum power output (P{sub MAX}) at the end of the study. A maximum of 30% of this has been attributed to LID and the further 15% to cell mismatch and cell degradation. The other two modules, a 64 W triple junction amorphous silicon module, and a 68 W flexible triple junction amorphous silicon module, exhibited LID followed by seasonal variation in the degraded P{sub MAX}. The 64 W module showed a maximum degradation in P{sub MAX} of about 22%. This is approximately 4% more than the manufacturer allowed for the initial LID. However, the seasonal variation in P{sub MAX} seems to be centred around the manufacturer's rating ({+-}4%). The 68 W flexible module has shown a maximum decrease in P{sub MAX} of about 27%. This decrease is about 17% greater than the manufacturer allowed for the initial LID. (author)

  11. Modelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbon

    Energy Technology Data Exchange (ETDEWEB)

    Dalgic, Seyfettin; Gonzalez, Luis Enrique; Baer, Shalom; Silbert, Moises

    2002-12-01

    We present the results of calculations of the static structure factor S(k) and the pair distribution function g(r) of the tetrahedral amorphous semiconductors germanium, silicon and carbon using the structural diffusion model (SDM). The results obtained with the SDM for S(k) and g(r) are of comparable quality with those obtained by the unconstrained Reverse Monte Carlo simulations and existing ab initio molecular dynamics simulations for these systems. We have found that g(r) exhibits a small peak, or shoulder, a weak remnant of the prominent third neighbour peak present in the crystalline phase of these systems. This feature has been experimentally found to be present in recently reported high energy X-ray experiments of amorphous silicon (Phys. Rev. B 60 (1999) 13520), as well as in the previous X-ray diffraction of as-evaporated amorphous germanium (Phys. Rev. B 50 (1994) 539)

  12. Laser annealing study of PECVD deposited hydrogenated amorphous silicon carbon alloy films

    Science.gov (United States)

    Coscia, U.; Ambrosone, G.; Gesuele, F.; Grossi, V.; Parisi, V.; Schutzmann, S.; Basa, D. K.

    2007-12-01

    The influence of carbon content on the crystallization process has been investigated for the excimer laser annealed hydrogenated amorphous silicon carbon alloy films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) technique, using silane methane gas mixture diluted in helium, as well as for the hydrogenated microcrystalline silicon carbon alloy films prepared by PECVD from silane methane gas mixture highly diluted in hydrogen, for comparison. The study demonstrates clearly that the increase in the carbon content prevents the crystallization process in the hydrogen diluted samples while the crystallization process is enhanced in the laser annealing of amorphous samples because of the increase in the absorbed laser energy density that occurs for the amorphous films with the higher carbon content. This, in turn, facilitates the crystallization for the laser annealed samples with higher carbon content, resulting in the formation of SiC crystallites along with Si crystallites.

  13. Towards neuromorphic electronics: Memristors on foldable silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-11-01

    The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex\\'s folded pattern for ultra-compact design.

  14. CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Said-Bacar, Z., E-mail: zabardjade@yahoo.fr [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Prathap, P. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Cayron, C. [CEA, LITEN, DEHT, Minatec, 17 rue des Martyrs, 38054 Cedex 9 (France); Mermet, F. [IREPA LASER, Pole API - Parc d' Innovation, 67400 Illkirch (France); Leroy, Y.; Antoni, F.; Slaoui, A.; Fogarassy, E. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer The effect of hydrogen in CW laser crystallization of hydrogenated amorphous silicon thin films has been investigated. Black-Right-Pointing-Pointer Large hydrogen content results in decohesion of the films due to hydrogen effusion. Black-Right-Pointing-Pointer Very low hydrogen content or hydrogen free amorphous silicon film are suitable for crystallization induced by CW laser. Black-Right-Pointing-Pointer Grains of size between 20 and 100 {mu}m in width and about 200 {mu}m in long in scanning direction are obtained with these latter films. - Abstract: This work presents the Continuous Wave (CW) laser crystallization of thin amorphous silicon (a-Si) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Electron Beam Evaporation (EBE) on low cost glass substrate. The films are characterized by Elastic Recoil Detection Analysis (ERDA) and by Fourier-Transform Infrared (FTIR) spectroscopy to evaluate the hydrogen content. Analysis shows that the PECVD films contain a high hydrogen concentration ({approx}10 at.%) while the EBE films are almost hydrogen-free. It is found that the hydrogen is in a bonding configuration with the a-Si network and in a free form, requiring a long thermal annealing for exodiffusion before the laser treatment to avoid explosive effusion. The CW laser crystallization process of the amorphous silicon films was operated in liquid phase regime. We show by Electron Backscatter Diffraction (EBSD) that polysilicon films with large grains can be obtained with EBE as well as for the PECVD amorphous silicon provided that for the latest the hydrogen content is lower than 2 at.%.

  15. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  16. Plasmonic enhancement of amorphous silicon solar photovoltaic cells with hexagonal silver arrays made with nanosphere lithography

    Science.gov (United States)

    Zhang, C.; Guney, D. O.; Pearce, J. M.

    2016-10-01

    Nanosphere lithography (NSL) provides an opportunity for a low-cost and scalable method to optically engineer solar photovoltaic (PV) cells. For PV applications, NSL is widely used in rear contact scenarios to excite surface plasmon polariton and/or high order diffractions, however, the top contact scenarios using NSL are rare. In this paper a systematic simulation study is conducted to determine the capability of achieving efficiency enhancement in hydrogenated amorphous silicon (a-Si:H) solar cells using NSL as a top contact plasmonic optical enhancer. The study focuses on triangular prism and sphere arrays as they are the most commonly and easily acquired through direct deposition or low-temperature annealing, respectively. For optical enhancement, a characteristic absorption profile is generated and analyzed to determine the effects of size, shape and spacing of plasmonic structures compared to an un-enhanced reference cell. The factors affecting NSL-enhanced PV performance include absorption, shielding effects, diffraction, and scattering. In the triangular prism array, parasitic absorption of the silver particles proves to be problematic, and although it can be alleviated by increasing the particle spacing, no useful enhancement was observed in the triangular prism arrays that were simulated. Sphere arrays, on the other hand, have broad scattering cross-sections that create useful scattering fields at several sizes and spacing intervals. For the simulated sphere arrays the highest enhancement found was 7.4%, which was fabricated with a 250 nm radius nanosphere and a 50 nm silver thickness, followed by annealing in inert gas. These results are promising and provide a path towards the commercialization of plasmonic a-Si:H solar cells using NSL fabrication techniques.

  17. AMORPHOUS SILICON ELECTRONIC STRUCTURE MODELING AND BASIC ELECTRO-PHYSICAL PARAMETERS CALCULATION

    Directory of Open Access Journals (Sweden)

    B. A. Golodenko

    2014-01-01

    Full Text Available Summary. The amorphous semiconductor has any unique processing characteristics and it is perspective material for electronic engineering. However, we have not authentic information about they atomic structure and it is essential knot for execution calculation they electronic states and electro physical properties. The author's methods give to us decision such problem. This method allowed to calculation the amorphous silicon modeling cluster atomics Cartesian coordinates, determined spectrum and density its electronic states and calculation the basics electro physical properties of the modeling cluster. At that determined numerical means of the energy gap, energy Fermi, electron concentration inside valence and conduction band for modeling cluster. The find results provides real ability for purposeful control to type and amorphous semiconductor charge carriers concentration and else provides relation between atomic construction and other amorphous substance physical properties, for example, heat capacity, magnetic susceptibility and other thermodynamic sizes.

  18. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp; Miyokawa, Norihiko; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  19. Ultrafast optical control using the Kerr nonlinearity in hydrogenated amorphous silicon microcylindrical resonators

    Science.gov (United States)

    Vukovic, N.; Healy, N.; Suhailin, F. H.; Mehta, P.; Day, T. D.; Badding, J. V.; Peacock, A. C.

    2013-10-01

    Microresonators are ideal systems for probing nonlinear phenomena at low thresholds due to their small mode volumes and high quality (Q) factors. As such, they have found use both for fundamental studies of light-matter interactions as well as for applications in areas ranging from telecommunications to medicine. In particular, semiconductor-based resonators with large Kerr nonlinearities have great potential for high speed, low power all-optical processing. Here we present experiments to characterize the size of the Kerr induced resonance wavelength shifting in a hydrogenated amorphous silicon resonator and demonstrate its potential for ultrafast all-optical modulation and switching. Large wavelength shifts are observed for low pump powers due to the high nonlinearity of the amorphous silicon material and the strong mode confinement in the microcylindrical resonator. The threshold energy for switching is less than a picojoule, representing a significant step towards advantageous low power silicon-based photonic technologies.

  20. Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Yang-Shin Lin

    2011-01-01

    Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

  1. Sub-amorphous thermal conductivity in ultrathin crystalline silicon nanotubes.

    Science.gov (United States)

    Wingert, Matthew C; Kwon, Soonshin; Hu, Ming; Poulikakos, Dimos; Xiang, Jie; Chen, Renkun

    2015-04-08

    Thermal transport behavior in nanostructures has become increasingly important for understanding and designing next generation electronic and energy devices. This has fueled vibrant research targeting both the causes and ability to induce extraordinary reductions of thermal conductivity in crystalline materials, which has predominantly been achieved by understanding that the phonon mean free path (MFP) is limited by the characteristic size of crystalline nanostructures, known as the boundary scattering or Casimir limit. Herein, by using a highly sensitive measurement system, we show that crystalline Si (c-Si) nanotubes (NTs) with shell thickness as thin as ∼5 nm exhibit a low thermal conductivity of ∼1.1 W m(-1) K(-1). Importantly, this value is lower than the apparent boundary scattering limit and is even about 30% lower than the measured value for amorphous Si (a-Si) NTs with similar geometries. This finding diverges from the prevailing general notion that amorphous materials represent the lower limit of thermal transport but can be explained by the strong elastic softening effect observed in the c-Si NTs, measured as a 6-fold reduction in Young's modulus compared to bulk Si and nearly half that of the a-Si NTs. These results illustrate the potent prospect of employing the elastic softening effect to engineer lower than amorphous, or subamorphous, thermal conductivity in ultrathin crystalline nanostructures.

  2. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    Science.gov (United States)

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

  3. Fabrication of the GLAST Silicon Tracker Readout Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Baldini, Luca; Brez, Alessandro; Himel, Thomas; Johnson, R.P.; Latronico, Luca; Minuti, Massimo; Nelson, David; Sadrozinski, H.F.-W.; Sgro, Carmelo; Spandre, Gloria; Sugizaki, Mutsumi; Tajima, Hiro; Cohen Tanugi, Johann; Young, Charles; Ziegler, Marcus; /Pisa U. /INFN, Pisa /SLAC /UC, Santa Cruz

    2006-03-03

    A unique electronics system has been built and tested for reading signals from the silicon-strip detectors of the Gamma-ray Large Area Space Telescope mission. The system amplifies and processes signals from 884,736 36-cm long silicon strips in a 4 x 4 array of tower modules. An aggressive mechanical design fits the readout electronics in narrow spaces between the tower modules, to minimize dead area. This design and the resulting departures from conventional electronics packaging led to several fabrication challenges and lessons learned. This paper describes the fabrication processes and how the problems peculiar to this design were overcome.

  4. Reactive Infiltration of Silicon Melt Through Microporous Amorphous Carbon Preforms

    Science.gov (United States)

    Sangsuwan, P.; Tewari, S. N.; Gatica, J. E.; Singh, M.; Dickerson, R.

    1999-01-01

    The kinetics of unidirectional capillary infiltration of silicon melt into microporous carbon preforms have been investigated as a function of the pore morphology and melt temperature. The infiltrated specimens showed alternating bands of dark and bright regions, which corresponded to the unreacted free carbon and free silicon regions, respectively. The decrease in the infiltration front velocity for increasing infiltration distances, is in qualitative agreement with the closed-form solution of capillarity driven fluid flow through constant cross section cylindrical pores. However, drastic changes in the thermal response and infiltration front morphologies were observed for minute differences in the preforms microstructure. This suggests the need for a dynamic percolation model that would account for the exothermic nature of the silicon-carbon chemical reaction and the associated pore closing phenomenon.

  5. Scaling silicon photonic switch fabrics for data center interconnection networks.

    Science.gov (United States)

    Nikolova, Dessislava; Rumley, Sébastien; Calhoun, David; Li, Qi; Hendry, Robert; Samadi, Payman; Bergman, Keren

    2015-01-26

    With the rapidly increasing aggregate bandwidth requirements of data centers there is a growing interest in the insertion of optically interconnected networks with high-radix transparent optical switch fabrics. Silicon photonics is a particularly promising and applicable technology due to its small footprint, CMOS compatibility, high bandwidth density, and the potential for nanosecond scale dynamic connectivity. In this paper we analyze the feasibility of building silicon photonic microring based switch fabrics for data center scale optical interconnection networks. We evaluate the scalability of a microring based switch fabric for WDM signals. Critical parameters including crosstalk, insertion loss and switching speed are analyzed, and their sensitivity with respect to device parameters is examined. We show that optimization of physical layer parameters can reduce crosstalk and increase switch fabric scalability. Our analysis indicates that with current state-of-the-art devices, a high radix 128 × 128 silicon photonic single chip switch fabric with tolerable power penalty is feasible. The applicability of silicon photonic microrings for data center switching is further supported via review of microring operations and control demonstrations. The challenges and opportunities for this technology platform are discussed.

  6. 3D Printing Fabrication of Amorphous Thermoelectric Materials with Ultralow Thermal Conductivity.

    Science.gov (United States)

    He, Minhong; Zhao, Yan; Wang, Biao; Xi, Qing; Zhou, Jun; Liang, Ziqi

    2015-11-25

    Thermoelectric materials are prepared by developing 3D printing technology. The 3D fabricated Bi0.5 Sb1.5 Te3 samples exhibit amorphous characteristics and thus show an ultralow thermal conductivity of 0.2 W m(-1) K(-1) . 3D printing fabrication readily generates bulk thermoelectric samples of any shape, which is not the case with traditional hot-pressing and spark plasma sintering methods.

  7. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  8. Unusually High and Anisotropic Thermal Conductivity in Amorphous Silicon Nanostructures.

    Science.gov (United States)

    Kwon, Soonshin; Zheng, Jianlin; Wingert, Matthew C; Cui, Shuang; Chen, Renkun

    2017-03-28

    Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (κ), which is ∼1 W·m(-1) K(-1) for a-Si. However, recent work suggested that κ of micrometer-thick a-Si films can be greater than 3 W·m(-1) K(-1), which is contributed to by propagating vibrational modes, referred to as "propagons". However, precise determination of κ in a-Si has been elusive. Here, we used structures of a-Si nanotubes and suspended a-Si films that enabled precise in-plane thermal conductivity (κ∥) measurement within a wide thickness range of 5 nm to 1.7 μm. We showed unexpectedly high κ∥ in a-Si nanostructures, reaching ∼3.0 and 5.3 W·m(-1) K(-1) at ∼100 nm and 1.7 μm, respectively. Furthermore, the measured κ∥ is significantly higher than the cross-plane κ on the same films. This unusually high and anisotropic thermal conductivity in the amorphous Si nanostructure manifests the surprisingly broad propagon mean free path distribution, which is found to range from 10 nm to 10 μm, in the disordered and atomically isotropic structure. This result provides an unambiguous answer to the century-old problem regarding mean free path distribution of propagons and also sheds light on the design and performance of numerous a-Si based electronic and optoelectronic devices.

  9. Thermal Conductivity of Amorphous and Nanocrystalline Silicon Films Prepared by Hot-Wire Chemical-Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nemeth, William M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jugdersuren, B. [Sotera Defense Solutions, Inc.; Kearney, B. T. [Naval Research Laboratory; Queen, D. R. [Naval Research Laboratory; Metcalf, T. H. [Naval Research Laboratory; Culbertson, J. C. [Naval Research Laboratory; Chervin, C. N. [Naval Research Laboratory; Stroud, R. M. [Naval Research Laboratory; Wang, Q. [Formerly NREL; Liu, Xiao [Naval Research Laboratory

    2017-07-31

    We report 3..omega.. thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 degrees C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline silicon is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.

  10. Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jugdersuren, B.; Kearney, B. T.; Queen, D. R.; Metcalf, T. H.; Culbertson, J. C.; Chervin, C. N.; Stroud, R. M.; Nemeth, W.; Wang, Q.; Liu, Xiao

    2017-07-01

    We report 3..omega.. thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 degrees C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline silicon is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.

  11. Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition

    Science.gov (United States)

    Jugdersuren, B.; Kearney, B. T.; Queen, D. R.; Metcalf, T. H.; Culbertson, J. C.; Chervin, C. N.; Stroud, R. M.; Nemeth, W.; Wang, Q.; Liu, Xiao

    2017-07-01

    We report 3 ω thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 ∘C . They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline silicon is approximately 60 % crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.

  12. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Da; Kunz, Thomas [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Wolf, Nadine [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Energy Efficiency, Am Galgenberg 87, 97074 Wuerzburg (Germany); Liebig, Jan Philipp [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Göken, Mathias [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Brabec, Christoph J. [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Institute of Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstr. 7, 91058 Erlangen (Germany)

    2015-05-29

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm{sup 2} aperture area on the graphite substrate. The optical properties of the SiN{sub x}/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN{sub x}/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN{sub x}/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance.

  13. Characterization of transparent conductive oxide films and their effect on amorphous/crystalline silicon heterojunction solar cells

    Science.gov (United States)

    Meng, Fanying; Shi, Jianhua; Shen, Leilei; Zhang, Liping; Liu, Jinning; Liu, Yucheng; Yu, Jian; Bao, Jian; Liu, Zhengxin

    2017-04-01

    Three different dopant indium oxide thin films were fabricated at low temperatures by reactive plasma deposition and sputtering. The optical and electrical characteristics of these films were analyzed as a function of the Hall electron concentration. Furthermore, these films were applied to amorphous/crystalline silicon heterojunction solar cells as transparent electrodes. Consequently, it was demonstrated that the high Hall mobility, high refractive index, and low extinction coefficient of transparent conductive oxide (TCO) films contribute to the high product of short-circuit current density and fill factor and conversion efficiency. Furthermore, it was found that the solar cell with a finger spacing of 1.9 mm on a 125 × 125 mm2 Si wafer is highly tolerant to TCO film resistivity when the electron concentration is less than 4.0 × 1020 cm-3.

  14. Method for fabricating transistors using crystalline silicon devices on glass

    Science.gov (United States)

    McCarthy, A.M.

    1997-09-02

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

  15. In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

    CERN Document Server

    Kessels, W M M; Sanden, M C M; Aydil, E S

    2002-01-01

    An in situ method based on attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) is presented for detecting surface silicon hydrides on plasma deposited hydrogenated amorphous silicon (a-Si:H) films and for determining their surface concentrations. Surface silicon hydrides are desorbed by exposing the a-Si:H films to low energy ions from a low density Ar plasma and by comparing the infrared spectrum before and after this low energy ion bombardment, the absorptions by surface hydrides can sensitively be separated from absorptions by bulk hydrides incorporated into the film. An experimental comparison with other methods that utilize isotope exchange of the surface hydrogen with deuterium showed good agreement and the advantages and disadvantages of the different methods are discussed. Furthermore, the determination of the composition of the surface hydrogen bondings on the basis of the literature data on hydrogenated crystalline silicon surfaces is presented, and quantification of the h...

  16. Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 1 February 2005 - 31 July 2008

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.; Williams, G. A.

    2009-09-01

    Electron spin resonance and nuclear magnetic resonance was done on amorphous silicon samples (modules with a-Si:H and a-SixGe1-x:H intrinsic layer) to study defects that contribute to Staebler-Wronski effect.

  17. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  18. Solar cell fabricated on welded thin flexible silicon

    Directory of Open Access Journals (Sweden)

    Hessmann Maik Thomas

    2015-01-01

    Full Text Available We present a thin-film crystalline silicon solar cell with an AM1.5 efficiency of 11.5% fabricated on welded 50 μm thin silicon foils. The aperture area of the cell is 1.00 cm2. The cell has an open-circuit voltage of 570 mV, a short-circuit current density of 29.9 mA cm-2 and a fill factor of 67.6%. These are the first results ever presented for solar cells on welded silicon foils. The foils were welded together in order to create the first thin flexible monocrystalline band substrate. A flexible band substrate offers the possibility to overcome the area restriction of ingot-based monocrystalline silicon wafers and the feasibility of a roll-to-roll manufacturing. In combination with an epitaxial and layer transfer process a decrease in production costs can be achieved.

  19. Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser

    Directory of Open Access Journals (Sweden)

    R. Černý

    2000-01-01

    Full Text Available An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental procedure on the mechanisms of pc-Si lateral growth is studied. Among these parameters, the energy density of the applied laser and the thickness of the amorphous silicon (a-Si layer are identified as the most significant. As an optimum solution, the mechanism of pc-Si growth consisting in repeated melting of a part of already crystallized pc-Si layer by the scanning laser is proposed.

  20. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  1. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Wensheng, E-mail: yws118@gmail.com; Gu, Min, E-mail: mgu@swin.edu.au [Centre for Micro-Photonics, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, Victoria 3122 (Australia); Tao, Zhikuo [College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Ong, Thiam Min Brian [Plasma Sources and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

  2. An alternative system for mycotoxin detection based on amorphous silicon sensors

    Science.gov (United States)

    Caputo, D.; de Cesare, G.; De Rossi, P.; Fanelli, C.; Nascetti, A.; Ricelli, A.; Scipinotti, R.

    2007-05-01

    In this work we investigate, for the first time, the performances of a system based on hydrogenated amorphous silicon photosensors for the detection of Ochratoxin A. The sensor is a n-type/intrinsic/p-type amorphous silicon stacked structure deposited on a glass substrate. The mycotoxin is deposited on a thin layer chromatographic plate and aligned with the sensor. An ultraviolet radiation excites the ochratoxin A, whose fluorescence produces a photocurrent in the sensor. The photocurrent value is proportional to the deposited mycotoxin quantity. An excellent linearity of the detector response over more than two orders of magnitude of ochratoxin A amount is observed. The minimum detected mycotoxin quantity is equal to 0.1ng, suggesting that the presented detection system could be a good candidate to perform rapid and analytical ochratoxin A analysis in different kind of samples.

  3. A fast method to diagnose phase transition from amorphous to microcrystalline silicon

    Institute of Scientific and Technical Information of China (English)

    HOU; GuoFu

    2007-01-01

    A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose the phase transition, was analyzed theoretically.……

  4. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, D. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain)], E-mail: delfina@eel.upc.edu; Voz, C.; Blanque, S. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain); Ibarz, D.; Bertomeu, J. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain); Alcubilla, R. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain)

    2009-03-15

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances ({rho}{sub c} {approx} 10 m{omega} cm{sup 2}) have been obtained on 2.8 {omega} cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  5. Comprehensive analysis of passive generation of parabolic similaritons in tapered hydrogenated amorphous silicon photonic wires.

    Science.gov (United States)

    Mei, Chao; Li, Feng; Yuan, Jinhui; Kang, Zhe; Zhang, Xianting; Yan, Binbin; Sang, Xinzhu; Wu, Qiang; Zhou, Xian; Zhong, Kangping; Wang, Liang; Wang, Kuiru; Yu, Chongxiu; Wai, P K A

    2017-06-19

    Parabolic pulses have important applications in both basic and applied sciences, such as high power optical amplification, optical communications, all-optical signal processing, etc. The generation of parabolic similaritons in tapered hydrogenated amorphous silicon photonic wires at telecom (λ ~ 1550 nm) and mid-IR (λ ≥ 2100 nm) wavelengths is demonstrated and analyzed. The self-similar theory of parabolic pulse generation in passive waveguides with increasing nonlinearity is presented. A generalized nonlinear Schrödinger equation is used to describe the coupled dynamics of optical field in the tapered hydrogenated amorphous silicon photonic wires with either decreasing dispersion or increasing nonlinearity. The impacts of length dependent higher-order effects, linear and nonlinear losses including two-photon absorption, and photon-generated free carriers, on the pulse evolutions are characterized. Numerical simulations show that initial Gaussian pulses will evolve into the parabolic pulses in the waveguide taper designed.

  6. Efficient nanorod-based amorphous silicon solar cells with advanced light trapping

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Y. [Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, High Tech Campus, Building 21, 5656 AE Eindhoven (Netherlands); Department of Applied Physics, Plasma & Materials Processing, Eindhoven University of Technology (TUE), P.O. Box 513, 5600 MB Eindhoven (Netherlands); Lare, M. C. van; Polman, A. [Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam (Netherlands); Veldhuizen, L. W.; Schropp, R. E. I., E-mail: r.e.i.schropp@tue.nl [Department of Applied Physics, Plasma & Materials Processing, Eindhoven University of Technology (TUE), P.O. Box 513, 5600 MB Eindhoven (Netherlands); Rath, J. K. [Physics of Devices, Debye Institute for Nanomaterials Science, Utrecht University, High Tech Campus, Building 21, 5656 AE Eindhoven (Netherlands)

    2015-11-14

    We present a simple, low-cost, and scalable approach for the fabrication of efficient nanorod-based solar cells. Templates with arrays of self-assembled ZnO nanorods with tunable morphology are synthesized by chemical bath deposition using a low process temperature at 80 °C. The nanorod templates are conformally coated with hydrogenated amorphous silicon light absorber layers of 100 nm and 200 nm thickness. An initial efficiency of up to 9.0% is achieved for the optimized design. External quantum efficiency measurements on the nanorod cells show a substantial photocurrent enhancement both in the red and the blue parts of the solar spectrum. Key insights in the light trapping mechanisms in these arrays are obtained via a combination of three-dimensional finite-difference time-domain simulations, optical absorption, and external quantum efficiency measurements. Front surface patterns enhance the light incoupling in the blue, while rear side patterns lead to enhanced light trapping in the red. The red response in the nanorod cells is limited by absorption in the patterned Ag back contact. With these findings, we develop and experimentally realize a further advanced design with patterned front and back sides while keeping the Ag reflector flat, showing significantly enhanced scattering from the back reflector with reduced parasitic absorption in the Ag and thus higher photocurrent generation. Many of the findings in this work can serve to provide insights for further optimization of nanostructures for thin-film solar cells in a broad range of materials.

  7. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  8. Full breast digital mammography with an amorphous silicon-based flat panel detector: Physical characteristics of a clinical prototype

    OpenAIRE

    2000-01-01

    The physical characteristics of a clinical prototype amorphous silicon-based flat panel imager for full-breast digital mammography have been investigated. The imager employs a thin thallium doped CsI scintillator on an amorphous silicon matrix of detector elements with a pixel pitch of 100 μm. Objective criteria such as modulation transfer function (MTF), noise power spectrum, detective quantum efficiency (DQE), and noise equivalent quanta were employed for this evaluation. The presampling MT...

  9. Improved stability of hydrogenated amorphous-silicon photosensitivity by ultraviolet illumination

    Science.gov (United States)

    Branz, Howard M.; Xu, Yueqin; Heck, Stephan; Gao, Wei

    2002-10-01

    Postdeposition ultraviolet (UV) illumination, followed by etching, improves the stability of hydrogenated amorphous-silicon thin films against subsequent light-induced degradation of photosensitivity. The etch removes a heavily damaged layer extending about 100 nm below the surface, but beneath the damage, the UV has improved the stability of 200 to 300 nm of bulk film. The open-circuit voltage of Schottky solar cells is also stabilized by UV-etch treatment. Possible mechanisms are discussed.

  10. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  11. First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2004-07-01

    We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5{mu}m, an spatial point reconstruction precision better than 10 {mu}m, deflection angles smaller than 10{mu}rad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm''3. (Author) 10 refs.

  12. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

    Science.gov (United States)

    Wienkes, Lee Raymond

    Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

  13. 2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Under electron beam irradiation, the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed. The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.

  14. The structure and physical properties of paracrystalline atomistic models of amorphous silicon.

    Energy Technology Data Exchange (ETDEWEB)

    Voyles, P. M.; Zotov, N.; Nakhmanson, S. M.; Drabold, D. A.; Gibson, J. M.; Treacy, M. M. J.; Keblinski, P.; Materials Science Division; Univ. of Illinois; Univ. Bayreuth; Ohio Univ.; NEC Research Inst.; Rensselaer Polytechnic Inst.

    2001-11-01

    We have examined the structure and physical properties of paracrystalline molecular dynamics models of amorphous silicon. Simulations from these models show qualitative agreement with the results of recent mesoscale fluctuation electron microscopy experiments on amorphous silicon and germanium. Such agreement is not found in simulations from continuous random network models. The paracrystalline models consist of topologically crystalline grains which are strongly strained and a disordered matrix between them. We present extensive structural and topological characterization of the medium range order present in the paracrystalline models and examine their physical properties, such as the vibrational density of states, Raman spectra, and electron density of states. We show by direct simulation that the ratio of the transverse acoustic mode to transverse optical mode intensities I{sub TA}/I{sub TO} in the vibrational density of states and the Raman spectrum can provide a measure of medium range order. In general, we conclude that the current paracrystalline models are a good qualitative representation of the paracrystalline structures observed in the experiment and thus provide guidelines toward understanding structure and properties of medium-range-ordered structures of amorphous semiconductors as well as other amorphous materials.

  15. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  16. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  17. Fabrication of hexagonal gallium nitride films on silicon (111) substrates

    Institute of Scientific and Technical Information of China (English)

    YANG Li; XUE Chengshan; WANG Cuimei; LI Huaixiang; REN Yuwen

    2003-01-01

    Hexagonal gallium nitride films were successfully fabricated through ammoniating Ga2O3 films deposited on silicon (111 ) substrates by electrophoresis. The structure, composition, and surface morphology of the formed films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM),and transmission electron microscopy (TEM). The measurement results reveal that the polycrystalline GaN films with hexagonal wurtzite structure were successfully grown on the silicon (111) substrates. Preliminary results suggest that varying the ammoniating temperature has obvious effect on the quality of the GaN films formed with this method.

  18. Improving the organic/Si heterojunction hybrid solar cell property by optimizing PEDOT:PSS film and with amorphous silicon as back surface field

    Science.gov (United States)

    Wen, Hongbin; Cai, Hongkun; Du, Yangyang; Dai, Xiaowan; Sun, Yun; Ni, Jian; Li, Juan; Zhang, Dexian; Zhang, Jianjun

    2017-01-01

    Organic/Si hybrid heterojunction hybrid solar cells have got a great progress. The hybrid device may be promising in terms of reducing cost due to its simple technological process. It is crucial for high efficiency solar cells to form better coating films on the Si substrate. Here, the performance of organic/Si heterojunction hybrid solar cells is obviously enhanced by adding surfactant (FS300) into poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) film and the device with amorphous silicon as back surface field is successfully fabricated. The proper amount of surfactant addition improves the uniformity and homogeneous of the polymer film that can be reflected by scanning electron microscope and atomic force microscope, which allows good contact on the texture-Si substrate resulting in excellent device property. Also, the power conversion efficiency of cells is boosted to 9.37 from 7.31% displayed a 28% enhancement by embedding amorphous silicon thin film layer at rear interface as holes blocking layer. The insertion layer of amorphous silicon enhances the extraction of photon-generated carrier and suppresses the recombination of hole-electron at the rear cathode. Which results all improvement in the short-circuit current density, the open-circuit voltage and the fill factor. By optimizing the polymer film property and inserting the hole blocking layer, the performance of hybrid Si/organic hybrid solar cells is greatly improved.

  19. Raman study of localized recrystallization of amorphous silicon induced by laser beam

    KAUST Repository

    Tabet, Nouar A.

    2012-06-01

    The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.

  20. Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys

    Science.gov (United States)

    Perrin, Jérôme; Takeda, Yoshihiko; Hirano, Naoto; Matsuura, Hideharu; Matsuda, Akihisa

    1989-01-01

    We report a systematic investigation of the effect of ion bombardment during the growth of amorphous silicon-germanium alloy films from silane and germane rf-glow discharge. Independent control of the plasma and the ion flux and energy is obtained by using a triode configuration. The ion contribution to the total deposition rate can reach 20% on negatively biased substrates. Although the Si and Ge composition of the film does not depend on the ion flux and energy, the optical, structural and electronic properties are drastically modified at low deposition temperatures when the maximum ion energy increases up to 50 eV, and remain constant above 50 eV. For a Ge atomic concentration of 37% and a temperature of 135°C, the optical gap decreases from 1.67 to 1.45 eV. This is correlated with a modification of hydrogen bonding configurations. Silicon dihydride sites disappear and preferential attachment of hydrogen to silicon is reduced in favour of germanium. Moreover the photoconductivity increases which shows that ion bombardment is a key parameter to optimize the quality of low band gap amorphous silicon-germanium alloys.

  1. Bandgap and Carrier Transport Engineering of Quantum Confined Mixed Phase Nanocrystalline/Amorphous Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Guan, Tianyuan; Klafehn, Grant; Kendrick, Chito; Theingi, San; Airuoyo, Idemudia; Lusk, Mark T.; Stradins, Paul; Taylor, Craig; Collins, Reuben T.

    2016-11-21

    Mixed phase nanocrystalline/amorphous-silicon (nc/a-Si:H) thin films with band-gap higher than bulk silicon are prepared by depositing silicon nanoparticles (SiNPs), prepared in a separate deposition zone, and hydrogenated amorphous silicon (a-Si:H), simultaneously. Since the two deposition phases are well decoupled, optimized parameters for each component can apply to the growth process. Photoluminescence spectroscopy (PL) shows that the embedded SiNPs are small enough to exhibit quantum confinement effects. The low temperature PL measurements on the mixed phase reveal a dominant emission feature, which is associated with SiNPs surrounded by a-Si:H. In addition, we compare time dependent low temperature PL measurements for both a-Si:H and mixed phase material under intensive laser exposure for various times up to two hours. The PL intensity of a-Si:H with embedded SiNPs degrades much less than that of pure a-Si:H. We propose this improvement of photostability occurs because carriers generated in the a-Si:H matrix quickly transfer into SiNPs and recombine there instead of recombining in a-Si:H and creating defect states (Staebler-Wronski Effect).

  2. Calculating formation range of binary amorphous alloys fabricated by electroless plating

    Science.gov (United States)

    Zhang, Bangwei; Liao, Shuzhi; Shu, Xiaolin; Xie, Haowen

    2016-06-01

    A lot of amorphous alloy deposits in the binary (Ni, Co, Cu)-(P, B) alloy systems fabricated by electroless plating (EP) have been reported up to date. But no one reported their theoretical modeling of the amorphous formation and calculated their concentration range of amorphous formation (RAF). Using Miedema model and subregular model scheme, the RAFs for the six EP (Ni, Co, Cu)-(P, B) alloys and three Ni-Cu, Ni-Co and Co-Cu alloys have been calculated systematically for the first time. The calculated results are in agreement with experimental observations. Experiments and calculations for the RAFs in the latter three alloy systems reveal that not any RAF formed except crystalline states. The huge difference between the six metal-metalloid alloys and three metal-metal alloys in RAF has been discussed in detail in the paper.

  3. Numerical simulation and fabrication of silicon sheet via spin casting.

    Science.gov (United States)

    Lee, Jaewoo; Kim, Hyunhui; Lee, Changbum; Kim, Joonsoo; Jang, Bo-Yun; Lee, Jinseok; Ahn, Youngsoo; Yoon, Wooyoung

    2013-05-01

    A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of thin silicon sheets without a mold and via spin casting is feasible. The faster the rotation speed of graphite mold, the thinner the thickness of sheet. After the spread of the molten silicon to cover the graphite mold with rotation speed of above 500 rpm, the solidification has to start. Silicon sheets can be produced by using the centrifugal force under appropriate experimental conditions. The spin-cast sheet had a vertical columnar microstructure due to the normal heat extraction to the substrate, and the sheet lifetime varied from 0.1 microS to 0.3 microS measured by using the microwave photoconductance decay (MW-PCD) to confirm that the spin-cast silicon sheet is applicable to photovoltaics.

  4. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (improvement of conversion efficiency of amorphous silicon solar cells after degradation); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (amorphous taiyo denchi no shoki rekkago koritsu kojo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development for qualitative improvement of a-Si solar cells after initial degradation in fiscal 1994. On the fabrication technology of light-stable a-Si films, the film formation method possible to control combined hydrogen by repetitive formation/treatment was developed. The obtained high-quality light-stable a-Si film was featured by low defect density in a wide optical band gap range, and defect density of nearly 3 {times} 10{sup 16}/cm{sup -3} after light irradiation. The light degradation rate of the cell where the a-Si film was applied to i layer was relatively stable by 10% or less. The a-Si/a-Si double-layer tandem cell fabricated by this technology produced a high conversion efficiency of 10.5%. By applying {mu}c-Si material to photoactive layer as narrow band gap material, the cell with optical sensitivity even in long wavelength ranges more than 1000nm was obtained. The a-Si/{mu}c-Si double-layer tandem cell produced an initial efficiency of 8.0% and an efficiency after degradation of 7.5%. 12 figs., 3 tabs.

  5. Accelerated growth from amorphous clusters to metallic nanoparticles observed in electrochemical deposition of platinum within nanopores of porous silicon

    NARCIS (Netherlands)

    Munoz-Noval, Alvaro; Fukami, Kazuhiro; Koyama, Akira; Gallach, Dario; Hermida-Merino, Daniel; Portale, Giuseppe; Kitada, Atsushi; Murase, Kuniaki; Abe, Takeshi; Hayakawa, Shinjiro; Sakka, Tetsuo

    2016-01-01

    This study examined the formation of amorphous platinum (Pt) clusters in nanopores of porous silicon at an initial stage of pore filling. The time dependency of the chemical state and local structure of Pt in the nanoporous silicon were characterized by X-ray absorption fine structure spectroscopy (

  6. Ion beam assisted deposition of hydrogenated amorphous silicon nitride

    Science.gov (United States)

    Hubler, G. K.; Donovan, E. P.; Gossett, C. R.

    1994-06-01

    Hydrogenated silicon nitride films were produced near room temperature by electron beam evaporation of Si and simultaneous bombardment with a 500 eV ammonia ion beam from a Kaufman ion source and for a variety of ratios of incident charge to evaporant fluxes. The composition of N, Si and H in the films as a function of ion current density was measured by means of Rutherford backscattering and elastic recoil detection analyses. Reflection and transmission spectroscopy in the wavelength range 400 nm to 3125 nm were employed to measure optical thickness and refractive index. From the data we extracted the number of nitrogen atoms in the ammonia beam per unit charge collected, the sputtering coefficient for ammonia incident on Si, and the refractive index versus composition of the alloys. At the highest N composition, the films were clear in the visible with the UV cut-off less than 400 nm, the index was 1.80 which is lower than that of pure Si3N4 and the H content was as high as 27 at.%.

  7. Structural and magnetic properties of FeNi thin films fabricated on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tashiro, T. Y.; Mizuguchi, M., E-mail: mizuguchi@imr.tohoku.ac.jp; Kojima, T.; Takanashi, K. [Institute for Materials Research, Tohoku University, Aoba-ku, Sendai 980-8577 (Japan); Koganezawa, T.; Kotsugi, M.; Ohtsuki, T. [Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), Sayo, Hyogo 679-5198 (Japan)

    2015-05-07

    FeNi films were fabricated by sputtering and rapid thermal annealing on thermally amorphous substrates to realize the formation of an L1{sub 0}-FeNi phase by a simple method. Structural and magnetic properties of FeNi films were investigated by varying the annealing temperature. L1{sub 0}-FeNi superlattice peaks were not observed in X-ray diffraction patterns, indicating no formation of L1{sub 0}-ordered phase, however, the surface structure systematically changed with the annealing temperature. Magnetization curves also revealed a drastic change depending on the annealing temperature, which indicates the close relation between the morphology and magnetic properties of FeNi films fabricated on amorphous substrates.

  8. Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Oh, Kyonghwan; Kwon, Oh-Kyong

    2012-03-01

    A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

  9. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

    Science.gov (United States)

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.

  10. Low-mobility solar cells: a device physics primer with application to amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schiff, E.A. [Syracuse University, New York (United States). Department of Physics

    2003-07-01

    The properties of pin solar cells based on photogeneration of charge carriers into low-mobility materials were calculated for two models. Ideal p- and n-type electrode layers were assumed in both cases. The first, elementary case involves only band mobilities and direct electron-hole recombination. An analytical approximation indicates that the power in thick cells rises as the 1/4 power of the lower band mobility, which reflects the buildup of space-charge under illumination. The approximation agrees well with computer simulation. The second model includes exponential bandtail trapping, which is commonly invoked to account for very low hole drift mobilities in amorphous silicon and other amorphous semiconductors. The two models have similar qualitative behavior. Predictions for the solar conversion efficiency of amorphous silicon-based cells that are limited by valence bandtail trapping are presented. The predictions account adequately for the efficiencies of present a-Si : H cells in their 'as-prepared' state (without light-soaking), and indicate the improvement that may be expected if hole drift mobilities (and valence bandtail widths) can be improved. (author)

  11. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaoqiang, E-mail: lxq_suse@sina.com [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China); Hao, Junying, E-mail: jyhao@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Xie, Yuntao [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China)

    2016-08-30

    Highlights: • Evolution of nanostructure and properties of the polymeric amorphous carbon films were firstly studied. • Si doping enhanced polymerization of the hydrocarbon chains and Al doping resulted in increase in the ordered carbon clusters of polymeric amorphous carbon films. • Soft polymeric amorphous carbon films exhibited an unconventional frictional behaviors with a superior wear resistance. • The mechanical and vacuum tribological properties of the polymeric amorphous carbon films were significantly improved by Si and Al co-doping. - Abstract: Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  12. Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy

    Science.gov (United States)

    Liao, Bolin; Najafi, Ebrahim; Li, Heng; Minnich, Austin J.; Zewail, Ahmed H.

    2017-09-01

    Charge carrier dynamics in amorphous semiconductors has been a topic of intense research that has been propelled by modern applications in thin-film solar cells, transistors and optical sensors. Charge transport in these materials differs fundamentally from that in crystalline semiconductors owing to the lack of long-range order and high defect density. Despite the existence of well-established experimental techniques such as photoconductivity time-of-flight and ultrafast optical measurements, many aspects of the dynamics of photo-excited charge carriers in amorphous semiconductors remain poorly understood. Here, we demonstrate direct imaging of carrier dynamics in space and time after photo-excitation in hydrogenated amorphous silicon (a-Si:H) by scanning ultrafast electron microscopy (SUEM). We observe an unexpected regime of fast diffusion immediately after photoexcitation, together with spontaneous electron-hole separation and charge trapping induced by the atomic disorder. Our findings demonstrate the rich dynamics of hot carrier transport in amorphous semiconductors that can be revealed by direct imaging based on SUEM.

  13. Band offsets at the crystalline / hydrogenated amorphous silicon interface from first-principles

    Science.gov (United States)

    Hazrati, Ebrahim; Jarolimek, Karol; de Wijs, Gilles A.; InstituteMolecules; Materials Team

    2015-03-01

    The heterojunction formed between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H) is a key component of a new type of high-efficiency silicon solar cell. Since a-Si:H has a larger band gap than c-Si, band offsets are formed at the interface. A band offset at the minority carrier band will mitigate recombination and lead to an increased efficiency. Experimental values of band offsets scatter in a broad range. However, a recent meta-analysis of the results (W. van Sark et al.pp. 405, Springer 2012) gives a larger valence offset (0.40 eV) than the conduction offset (0.15 eV). In light of the conflicting reports our goal is to calculate the band offsets at the c-Si/a-Si:H interface from first-principles. We have prepared several atomistic models of the interface. The crystalline part is terminated with (111) surfaces on both sides. The amorphous structure is generated by simulating an annealing process at 1100 K, with DFT molecular dynamics. Once the atomistic is ready it can be used to calculate the electronic structure of the interface. Our preliminary results show that the valence offset is larger than the conduction band offset.

  14. Absorption enhancement in amorphous silicon thin films via plasmonic resonances in nickel silicide nanoparticles

    Science.gov (United States)

    Hachtel, Jordan; Shen, Xiao; Pantelides, Sokrates; Sachan, Ritesh; Gonzalez, Carlos; Dyck, Ondrej; Fu, Shaofang; Kalnayaraman, Ramki; Rack, Phillip; Duscher, Gerd

    2013-03-01

    Silicon is a near ideal material for photovoltaics due to its low cost, abundance, and well documented optical properties. The sole detriment of Si in photovoltaics is poor absorption in the infrared. Nanoparticle surface plasmon resonances are predicted to increase absorption by scattering to angles greater than the critical angle for total internal reflection (16° for a Si/air interface), trapping the light in the film. Experiments confirm that nickel silicide nanoparticles embedded in amorphous silicon increases absorption significantly in the infrared. However, it remains to be seen if electron-hole pair generation is increased in the solar cell, or whether the light is absorbed by the nanoparticles themselves. The nature of the absorption is explored by a study of the surface plasmon resonances through electron energy loss spectrometry and scanning transmission electron microscopy experiments, as well as first principles density functional theory calculations. Initial experimental results do not show strong plasmon resonances on the nanoparticle surfaces. Calculations of the optical properties of the nickel silicide particles in amorphous silicon are performed to understand why this resonance is suppressed. Work supported by NSF EPS 1004083 (TN-SCORE).

  15. Investigation of the crystallization process of amorphous silicon thin films%非晶硅薄膜晶化过程的研究

    Institute of Scientific and Technical Information of China (English)

    黄木香; 杨琳; 刘玉琪; 王江涌

    2012-01-01

    Polycrystalline silicon thin film is a high quality material for micro - electronic components, thin film transistors and large flat-panel LCD displays because of its high electrical mobility and stable photoelectric properties. Moreover, it has been regarded as a candidate material for making high efficiency, lower energy consumption and optimized thin film solar cells. Therefore, how to fabricate polycrystalline silicon thin film is a very meaningful research topic. Solid phase crystallization is a usual method to fabricate polycrystalline silicon thin film, by high temperature annealing to transfer amorphous film to polycrystalline phase, In this paper, the solid phase crystallization process of amorphous silicon thin films fabricated by different techniques are studied systematically by XRD and Raman spectroscopy.%多晶硅薄膜具有较高的电迁移率和稳定的光电性能,是制备微电子器件、薄膜晶体管、大面积平板液晶显示的优质材料.多晶硅薄膜被公认为是制备高效、低耗、最理想的薄膜太阳能电池的材料.因此,如何制备多晶硅薄膜是一个非常有意义的研究课题.固相法是制备多晶硅薄膜的一种常用方法,它是在高温退火的条件下,使非晶硅薄膜通过固相相变而成为多晶硅薄膜.本文采用固相法,利用X-ray衍射及拉曼光谱,对用不同方法制备的非晶硅薄膜的晶化过程进行了系统地研究.

  16. Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries.

    Science.gov (United States)

    Hwang, Jeongwoon; Ihm, Jisoon; Lee, Kwang-Ryeol; Kim, Seungchul

    2015-10-13

    We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1-16 eV). As the incident energy decreases, the ratio of sp² carbons increases, that of sp³ decreases, and the carbon films become more porous. The films prepared with very low incident energy contain lithium-ion conducting channels. Also, those films are electrically conductive to supplement the poor conductivity of silicon and can restore their structure after large deformation to accommodate the volume change during the operations. As a result of this study, we suggest that graphite-like porous carbon coating on silicon will extend the lifetime of the silicon anodes of lithium-ion batteries.

  17. Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

    Directory of Open Access Journals (Sweden)

    Gammon P.M.

    2017-01-01

    Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

  18. Crystallization of amorphous silicon by self-propagation of nanoengineered thermites

    Science.gov (United States)

    Hossain, Maruf; Subramanian, Senthil; Bhattacharya, Shantanu; Gao, Yuanfang; Apperson, Steve; Shende, Rajesh; Guha, Suchi; Arif, Mohammad; Bai, Mengjun; Gangopadhyay, Keshab; Gangopadhyay, Shubhra

    2007-03-01

    Crystallization of amorphous silicon (a-Si) thin film occurred by the self-propagation of copper oxide/aluminum thermite nanocomposites. Amorphous Si films were prepared on glass at a temperature of 250°C by plasma enhanced chemical vapor deposition. The platinum heater was patterned on the edge of the substrate and the CuO /Al nanoengineered thermite was spin coated on the substrate that connects the heater and the a-Si film. A voltage source was used to ignite the thermites followed by a piranha solution (4:1 of H2SO4:H2O2) etch for the removal of residual products of thermite reaction. Raman spectroscopy was used to confirm the crystallization of a-Si.

  19. Enhancement of hydrogenated amorphous silicon solar cells with front-surface hexagonal plasmonic arrays from nanoscale lithography

    Science.gov (United States)

    Zhang, Chenlong; Gwamuri, Jephias; Cvetanovic, Sandra; Sadatgol, Mehdi; Guney, Durdu O.; Pearce, Joshua M.

    2017-07-01

    The study first uses numerical simulations of hexagonal triangle and sphere arrays to optimize the performance of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices. The simulations indicated the potential for a sphere array to provide optical enhancement (OE) up to 7.4% compared to a standard cell using a nanosphere radius of 250 nm and silver film thickness of 50 nm. Next a detailed series of a-Si:H cells were fabricated and tested for quantum efficiency and characteristic and current-voltage (I-V) profiles using a solar simulator. Triangle and sphere array based cells, as well as the uncoated reference cells are analyzed and the results find that the simulation does not precisely predict the observed enhancement, but it forecasts a trend and can be used to guide fabrication. In general, the measured OE follows the simulated trend: (1) for triangular arrays no enhancement is observed and as the silver thickness increases the more degradation of the cell; (2) for annealed arrays both measured and simulated OE occur with the thinner silver thickness. Measured efficiency enhancement reached 20.2% and 10.9% for nanosphere diameter D = 500 nm, silver thicknesses h = 50 nm and 25 nm, respectively. These values, which surpass simulation results, indicate that this method is worth additional investigation.

  20. Near-field optical study of 3rd order nonlinear properties of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Yun Jin; Park, J.H.; Kim, M.R.; Jhe, Won Ho [Seoul National University, Seoul (Korea, Republic of); Rhee, B.K. [Sogang University, Seoul (Korea, Republic of)

    1999-07-01

    The 3rd order nonlinear properties show optical bleaching (Saturation) and Reverse saturation in absorption aspect, whereas self-focusing and self-defocusing in refraction aspect. Optical bleaching and self-focusing phenomena of those properties in particular can be useful to make the optical beam spot size smaller for application on the higher optical storage density. In this experiment, amorphous silicon layer is used to investigate the effect of 3rd order nonlinear material(1) on the spot size. The amorphous silicon (A-Si) layer is deposited by the method of PECVD on the corning 1737 fusion glass and its thickness is 300 nm. Two experiments are carried out in this work. One is the far-field Z-Scan and the other is the near-field Z-scan where the laser beam spot is scanned by NSOM in the near field region of the material. The former is for investigating the general 3rd order nonlinear properties of amorphous silicon and the latter is for measuring the change of the beam spot size directly. The far-field Z-scan shows Reverse saturation (Im{chi}{sup (3)} {approx} 8 X 10{sup -3} esu) and self-focusing (Re{chi}{sup (3)} {approx} 2 X 10{sup -2} esu) properties for the A-Si layer. In the second experiment, we present the change the beam spot size as a function of the input beam intensity for the A-Si layer. As a result, we find that the stronger the input beam intensity is, the smaller a beam spot size is obtained for A-Si layer. (author)

  1. Stability of amorphous silicon alloy triple-junction solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K.; Aiga, M.; Otsubo, M.

    1987-06-25

    Results on reliability test for amorphous silicon alloy triple-junction solar cells and modules are described. It has been found that, for a-SiGe:H pin cells, reduction of the stress in the film is of first importance for stability. Application of low-temperature-deposited microcrystalline p-layer for each sub cell and of thinner i-layers for the middle and the bottom cells improves stability of triple-junction cells, by enhancing the electric field in the i-layers.

  2. Review of amorphous silicon based particle detectors: the quest for single particle detection

    Science.gov (United States)

    Wyrsch, N.; Ballif, C.

    2016-10-01

    Hydrogenated amorphous silicon (a-Si:H) is attractive for radiation detectors because of its radiation resistance and processability over large areas with mature Si microfabrication techniques. While the use of a-Si:H for medical imaging has been very successful, the development of detectors for particle tracking and minimum-ionizing-particle detection has lagged, with almost no practical implementation. This paper reviews the development of various types of a-Si:H-based detectors and discusses their respective achievements and limitations. It also presents more recent developments of detectors that could potentially achieve single particle detection and be integrated in a monolithic fashion into a variety of applications.

  3. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  4. Thin metal layer as transparent electrode in n-i-p amorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Theuring Martin

    2014-07-01

    Full Text Available In this paper, transparent electrodes, based on a thin silver film and a capping layer, are investigated. Low deposition temperature, flexibility and low material costs are the advantages of this type of electrode. Their applicability in structured n-i-p amorphous silicon solar cells is demonstrated in simulation and experiment. The influence of the individual layer thicknesses on the solar cell performance is discussed and approaches for further improvements are given. For the silver film/capping layer electrode, a higher solar cell efficiency could be achieved compared to a reference ZnO:Al front contact.

  5. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Martinez-Rivero, C. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Matorras, F. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Rodrigo, T. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Sobron, M. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Vila, I. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Alberdi, J. [CIEMAT, Madrid (Spain); Arce, P. [CIEMAT, Madrid (Spain); Barcala, J.M. [CIEMAT, Madrid (Spain); Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)]. E-mail: antonio.ferrando@ciemat.es; Josa, M.I. [CIEMAT, Madrid (Spain); Luque, J.M. [CIEMAT, Madrid (Spain); Molinero, A. [CIEMAT, Madrid (Spain); Navarrete, J. [CIEMAT, Madrid (Spain); Oller, J.C. [CIEMAT, Madrid (Spain); Yuste, C. [CIEMAT, Madrid (Spain); Koehler, C. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Lutz, B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Schubert, M.B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany)

    2006-09-15

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm{sup 2}) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3{mu}m, a spatial-point reconstruction precision better than 10{mu}m, deflection angles smaller than 10{mu}rad and a transmission power in the visible and NIR higher than 70%.

  6. Amorphous Silicon Solar cells with a Core-Shell Nanograting Structure

    CERN Document Server

    Yang, L; Okuno, Y; He, S

    2011-01-01

    We systematically investigate the optical behaviors of an amorphous silicon solar cell based on a core-shell nanograting structure. The horizontally propagating Bloch waves and Surface Plasmon Polariton (SPP) waves lead to significant absorption enhancements and consequently short-circuit current enhancements of this structure, compared with the conventional planar one. The perpendicular carrier collection makes this structure optically thick and electronically thin. An optimal design is achieved through full-field numerical simulation, and physical explanation is given. Our numerical results show that this configuration has ultrabroadband, omnidirectional and polarization-insensitive responses, and has a great potential in photovoltaics.

  7. Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides

    DEFF Research Database (Denmark)

    Kuyken, B.; Ji, Hua; Clemmen, S.

    2011-01-01

    We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of the nonlinear parameter of these photonic nanowires reveals a figure of merit larger than 2. It is observed that the nonlinear optical properties...... of these waveguides degrade with time, but that this degradation can be reversed by annealing the samples. A four wave mixing conversion efficiency of + 12 dB is demonstrated in a 320 Gbit/s serial optical waveform data sampling experiment in a 4 mm long photonic nanowire....

  8. Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition

    Science.gov (United States)

    Rocheleau, Richard E.; Hegedus, Steven S.; Buchanan, Wayne A.; Jackson, Scott C.

    1987-07-01

    A novel photochemical vapor deposition (photo-CVD) reactor having a flexible ultraviolet-transparent Teflon curtain and a secondary gas flow to eliminate deposition on the window has been used to deposit amorphous silicon films and p-i-n solar cells. The background levels of atmospheric contaminants (H2O, CO2, N2) depend strongly on the vacuum procedures but not on the presence of a Teflon curtain in the reactor. Intrinsic films with a midgap density of states of 3×1015 eV-1 cm-3 and all-photo-CVD pin solar cells with efficiencies of 8.5% have been deposited.

  9. Defects left after regrowth of amorphous silicon on crystalline Si : C (V) and DLTS studies

    OpenAIRE

    Castaing, J.; Cass, T.

    1985-01-01

    n and p-type silicon have been self-ion implanted at 77 K with multi-energetic beams. This process was used to amorphize a 0.4 μm layer with a minimum amount of damage in the underlying crystal. After regrowth by a 550 °C anneal, the remaining defects were assessed by capacitance-voltage (C(V )) measurements and deep level transient spectroscopy (DLTS). In n-type Si, a buried layer of deep donors in large concentration was found, whereas in p-type Si, their concentration was small. These trap...

  10. The model of solid phase crystallization of amorphous silicon under elastic stress

    OpenAIRE

    2000-01-01

    Solid phase crystallization of an amorphous silicon (a-Si) film stressed by a Si3N4 cap was studied by laser Raman spectroscopy. The a-Si films were deposited on Si3N4 (50 nm)/Si(100) substrate by rf sputtering. The stress in an a-Si film was controlled by thickness of a Si3N4 cap layer. The Si3N4 films were also deposited by rf sputtering. It was observed that the crystallization was affected by the stress in a-Si films introduced by the Si3N4 cap layer. The study suggests that the elastic s...

  11. Microfabricated silicon gas chromatographic micro-channels: fabrication and performance

    Energy Technology Data Exchange (ETDEWEB)

    Matzke, C.M.; Kottenstette, R.J.; Casalnuovo, S.A.; Frye-Mason, G.C.; Hudson, M.L.; Sasaki, D.Y.; Manginell, R.P.; Wong, C.C.

    1998-11-01

    Using both wet and plasma etching, we have fabricated micro-channels in silicon substrates suitable for use as gas chromatography (GC) columns. Micro-channel dimensions range from 10 to 80 {micro}m wide, 200 to 400 {micro}m deep, and 10 cm to 100 cm long. Micro-channels 100 cm long take up as little as 1 cm{sup 2} on the substrate when fabricated with a high aspect ratio silicon etch (HARSE) process. Channels are sealed by anodically bonding Pyrex lids to the Si substrates. We have studied micro-channel flow characteristics to establish model parameters for system optimization. We have also coated these micro-channels with stationary phases and demonstrated GC separations. We believe separation performance can be improved by increasing stationary phase coating uniformity through micro-channel surface treatment prior to stationary phase deposition. To this end, we have developed microfabrication techniques to etch through silicon wafers using the HARSE process. Etching completely through the Si substrate facilitates the treatment and characterization of the micro- channel sidewalls, which domminate the GC physico-chemical interaction. With this approach, we separately treat the Pyrex lid surfaces that form the top and bottom surfaces of the GC flow channel.

  12. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Science.gov (United States)

    Lee, Hyoung-Rae; Park, Jea-Gun

    2014-10-01

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage ( V th ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO X distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O2. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  13. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    Science.gov (United States)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  14. Hydex Glass and Amorphous Silicon for Integrated Nonlinear Optical Signal Processing

    CERN Document Server

    Morandotti, Roberto

    2015-01-01

    Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. Although silicon-on-insulator has been the leading platform for nonlinear optics for some time, its high two-photon absorption at telecommunications wavelengths poses a fundamental limitation. We review the recent achievements based in new CMOS-compatible platforms that are better suited than SOI for nonlinear optics, focusing on amorphous silicon and Hydex glass. We highlight their potential as well as the challenges to achieving practical solutions for many key applications. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation and ultrafast optical pulse generation and measurement.

  15. Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation

    CERN Document Server

    Krzeminski, Christophe; 10.1140/epjb/e2011-10958-7

    2011-01-01

    The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to solar cells, more knowledge of the mechanisms governing the migration of the silicon amorphous/crystalline interface and dopant diffusion during solid phase epitaxy is needed. In this work, silicon recrystallisation in the framework of solid phase epitaxy and the influence on orientation effects have been investigated at the atomic level using empirical molecular dynamics simulations. The morphology and the migration process of the interface has been observed to be highly dependent on the original inter-facial atomic structure. The [100] interface migration is a quasi-planar ideal process whereas the cases [110] and [111] are much more complex with a more diffuse interface. For [110], the interface migration corresponds to the formation and dissolution of nanofacets whereas for [111] a defective based bilayer reor...

  16. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    Science.gov (United States)

    Mutch, Michael J.; Lenahan, Patrick M.; King, Sean W.

    2016-08-01

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  17. Study of the amorphization of surface silicon layers implanted by low-energy helium ions

    Science.gov (United States)

    Lomov, A. A.; Myakon'kikh, A. V.; Oreshko, A. P.; Shemukhin, A. A.

    2016-03-01

    The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2-5)-keV helium ions to a dose of D = 6 × 1015-5 × 1017 cm-2 have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ( z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 1016 cm-2 leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

  18. From Plastic to Silicone: The Novelties in Porous Polymer Fabrications

    Directory of Open Access Journals (Sweden)

    Soumaya Berro

    2015-01-01

    Full Text Available Porous polymers are gaining increased interest in several areas due, in great part, to their large surface area and unique physiochemical properties. Porous polymers are conventionally manufactured using specific processes related to the chemical structure of each polymer. With the wide variety of porous polymers that have been designed, fabricated, and tested to date, this review aims to provide an overview of the advances and recent progress in the preparation processes and fabrication techniques. A detailed comparison between these techniques is also provided. Some of these techniques offer the advantage of controlling the porosity and the possibility to obtain porous 3D polymers. A new generic fabrication process that can be applied to all liquid polymers to texture their outer surfaces with a desired porosity is also presented. The proposed process, which is based on two micromolding steps, offers flexibility in terms of tailoring the texture of the final polymer by simply using porous silicon templates with different pore sizes and configurations. The anticipated process was successfully implemented to texture polyethyl hydrosiloxane (PMHS using porous silicon and polymethyl methacrylate (PMMA scaffolds.

  19. Fourier transform infrared analysis of ceramic powders: Quantitative determination of alpha, beta, and amorphous phases of silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Trout, T.K.; Bellama, J.M.; Brinckman, F.E.; Faltynek, R.A.

    1989-03-01

    Fourier transform infrared spectroscopy (FT-IR) forms the basis for determining the morphological composition of mixtures containing alpha, beta, and amorphous phases of silicon nitride. The analytical technique, involving multiple linear regression treatment of Kubelka-Munk absorbance values from diffuse reflectance measurements, yields specific percent composition data for the amorphous phase as well as the crystalline phases in ternary mixtures of 0--1% by weight Si/sub 3/N/sub 4/ in potassium bromide.

  20. Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

    Science.gov (United States)

    Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

    2016-01-01

    A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

  1. Achieving thermography with a thermal security camera using uncooled amorphous silicon microbolometer image sensors

    Science.gov (United States)

    Wang, Yu-Wei; Tesdahl, Curtis; Owens, Jim; Dorn, David

    2012-06-01

    Advancements in uncooled microbolometer technology over the last several years have opened up many commercial applications which had been previously cost prohibitive. Thermal technology is no longer limited to the military and government market segments. One type of thermal sensor with low NETD which is available in the commercial market segment is the uncooled amorphous silicon (α-Si) microbolometer image sensor. Typical thermal security cameras focus on providing the best image quality by auto tonemaping (contrast enhancing) the image, which provides the best contrast depending on the temperature range of the scene. While this may provide enough information to detect objects and activities, there are further benefits of being able to estimate the actual object temperatures in a scene. This thermographic ability can provide functionality beyond typical security cameras by being able to monitor processes. Example applications of thermography[2] with thermal camera include: monitoring electrical circuits, industrial machinery, building thermal leaks, oil/gas pipelines, power substations, etc...[3][5] This paper discusses the methodology of estimating object temperatures by characterizing/calibrating different components inside a thermal camera utilizing an uncooled amorphous silicon microbolometer image sensor. Plots of system performance across camera operating temperatures will be shown.

  2. Solid state photochemistry. Subpanel A-2(b): Metastability in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D. [Solarex Corporation, Newton, PA (United States)

    1996-09-01

    All device quality amorphous silicon based materials exhibit degradation in electronic properties when exposed to sunlight. The photo-induced defects are associated with Si dangling bonds that are created by the recombination and/or trapping of photogenerated carriers. The defects are metastable and can be annealed out at temperatures of about 150 to 200 degrees Centigrade. The density of metastable defects is larger in films that are contaminated with > 10{sup 19} per cubic cm of impurities such as oxygen, carbon and nitrogen. However, recent experimental results indicate that some metastable defects are still present in films with very low impurity concentrations. The photo-induced defects typically saturate after 100 to 1000 hours of exposure to one sun illumination depending on the deposition conditions. There is also experimental evidence that photo-induced structural changes are occurring in the amorphous silicon based materials and that hydrogen may be playing an important role in both the photo-induced structural changes and in the creation of metastable defects.

  3. Amorphous silicon pixel layers with cesium iodide converters for medical radiography

    Energy Technology Data Exchange (ETDEWEB)

    Jing, T.; Cho, G. [Lawrence Berkeley Lab., CA (United States); Goodman, C.A. [Air Techniques, Inc., Hicksville, NY (United States)] [and others

    1993-11-01

    We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220{mu}m. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1--0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200--300C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately l{mu}m thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less then 50{mu}m. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on pattered substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level.

  4. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kezzoula, F., E-mail: kezzoula@usa.com [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Hammouda, A. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Kechouane, M. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Simon, P. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Abaidia, S.E.H. [Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Keffous, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Cherfi, R. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Menari, H.; Manseri, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria)

    2011-09-15

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  5. Depth profile study on Raman spectra of high-energy-electron-irradiated hydrogenated amorphous silicon films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    According to the different penetration depths for the incident lights of 472 nm and 532 nm in hydrogenated amorphous silicon (a-Si:H) thin films, the depth profile study on Raman spectra of a-Si:H films was carried out. The network ordering evolution in the near surface and interior region of the unirradiated and irradiated a-Si:H films was investigated. The results show that there is a structural improvement in the shortand intermediate-range order towards the surface of the unirradiated a-Si:H films. The amorphous silicon network in the near and interior region becomes more disordered on the shortand intermediate-range scales after being irradiated with high energy electrons. However, the surface of the irradiated films becomes more disordered in comparison with their interior region, indicating that the created defects caused by electron irradiation are concentrated in the near surface of the irradiated films. Annealing eliminates the irradiation effects on a-Si:H thin films and the structural order of the irradiated films is similar to that of the unirradiated ones after being annealed. There exists a structural improvement in the shortand intermediate-range order towards the surface of the irradiated a-Si:H films after being annealed.

  6. Amorphous silicon based p-i-i-n photodetectors for point-of-care testing

    Energy Technology Data Exchange (ETDEWEB)

    Furin, Dominik; Proll, Guenther; Gauglitz, Guenther [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, 72076 Tuebingen (Germany); Thielmann, Johannes; Harendt, Christine [Institut fuer Mikroelektronik Stuttgart, Allmandring 30a, 70569 Stuttgart (Germany); Pfaefflin, Albrecht; Schleicher, Erwin [Universitaetsklinikum und Medizinische Fakultaet, Universitaetsklinikum Tuebingen, Geissweg 3, 72076 Tuebingen (Germany); Schubert, Markus B. [Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Saemann, Marc

    2010-04-15

    Modern medical diagnostics demands point-of-care testing (POCT) systems for quick tests in clinical or out-patient environments. This investigation combines the Reflectometric Interference Spectroscopy (RIfS) with thin film technology for a highly sensitive, direct optical and label-free detection of proteins, e.g. inflammation or cardiovascular markers. Amorphous silicon (a-Si) based thin film photodetectors replace the so far needed spectrometer and permit downsizing of the POCT system. Photodetectors with p-i-i-n structure adjust their spectral sensitivity according to the applied read-out voltage. The use of amorphous silicon carbide in the p-type and the first intrinsic layer enhances the sensitivity through very low dark currents of the photodetectors and enables the adjustment of their absorption characteristics. Integrating the thin film photodetectors on the rear side of the RIfS substrate eliminates optical losses and distortions, as compared to the standard RIfS setup. An integrated Application Specific Integrated Circuit (ASIC) chip performs a current-frequency conversion to accurately detect the photocurrent of up to eight parallel photodetector channels. In addition to the optimization of the photo-detectors, this contribution presents first successful direct optical and label-free RIfS measurements of C-reactive protein (CRP) and D-dimer in buffer solution in physiological relevant concentrations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Amorphous SiC layers for electrically conductive Rugate filters in silicon based solar cells

    Science.gov (United States)

    Janz, S.; Peters, M.; Künle, M.; Gradmann, R.; Suwito, D.

    2010-05-01

    The subject of this work is the development of an electrically conductive Rugate filter for photovoltaic applications. We think that the optical as well as the electrical performance of the filter can be adapted especially to the requirements of crystalline Si thin-film and amorphous/crystalline silicon tandem solar cells. We have deposited amorphous hydrogenated Silicon Carbide layers (a-SixC1-x:H) with the precursor gases methane (CH4), silane (SiH4) and diborane (B2H6) applying Plasma Enhanced Chemical Vapour Deposition (PECVD). Through changing just the precursor flows a floating refractive index n from 1.9 to 3.5 (at 633 nm) could be achieved quite accurately. Different complex layer stacks (up to 200 layers) with a sinusoidal refractive index variation normal to the incident light were deposited in just 80 min on 100x100 mm2. Transmission measurements show good agreement between simulation and experiment which proofs our ability to control the deposition process, the good knowledge of the optical behaviour of the different SiC single layers and the advanced stage of our simulation model. The doped single layers show lateral conductivities which were extremely dependent on the Si/C ratio.

  8. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. Band Offsets at the Interface between Crystalline and Amorphous Silicon from First Principles

    Science.gov (United States)

    Jarolimek, K.; Hazrati, E.; de Groot, R. A.; de Wijs, G. A.

    2017-07-01

    The band offsets between crystalline and hydrogenated amorphous silicon (a -Si ∶H ) are key parameters governing the charge transport in modern silicon heterojunction solar cells. They are an important input for macroscopic simulators that are used to further optimize the solar cell. Past experimental studies, using x-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurements, have yielded conflicting results on the band offset. Here, we present a computational study on the band offsets. It is based on atomistic models and density-functional theory (DFT). The amorphous part of the interface is obtained by relatively long DFT first-principles molecular-dynamics runs at an elevated temperature on 30 statistically independent samples. In order to obtain a realistic conduction-band position the electronic structure of the interface is calculated with a hybrid functional. We find a slight asymmetry in the band offsets, where the offset in the valence band (0.29 eV) is larger than in the conduction band (0.17 eV). Our results are in agreement with the latest XPS measurements that report a valence-band offset of 0.3 eV [M. Liebhaber et al., Appl. Phys. Lett. 106, 031601 (2015), 10.1063/1.4906195].

  10. Non-negligible Contributions to Thermal Conductivity From Localized Modes in Amorphous Silicon Dioxide

    Science.gov (United States)

    Lv, Wei; Henry, Asegun

    2016-10-01

    Thermal conductivity is important for almost all applications involving heat transfer. The theory and modeling of crystalline materials is in some sense a solved problem, where one can now calculate their thermal conductivity from first principles using expressions based on the phonon gas model (PGM). However, modeling of amorphous materials still has many open questions, because the PGM itself becomes questionable when one cannot rigorously define the phonon velocities. In this report, we used our recently developed Green-Kubo modal analysis (GKMA) method to study amorphous silicon dioxide (a-SiO2). The predicted thermal conductivities exhibit excellent agreement with experiments and anharmonic effects are included in the thermal conductivity calculation for all the modes in a-SiO2 for the first time. Previously, localized modes (locons) have been thought to have a negligible contribution to thermal conductivity, due to their highly localized nature. However, in a-SiO2 our results indicate that locons contribute more than 10% to the total thermal conductivity from 400 K to 800 K and they are largely responsible for the increase in thermal conductivity of a-SiO2 above room temperature. This is an effect that cannot be explained by previous methods and therefore offers new insight into the nature of phonon transport in amorphous/glassy materials.

  11. Non-negligible Contributions to Thermal Conductivity From Localized Modes in Amorphous Silicon Dioxide.

    Science.gov (United States)

    Lv, Wei; Henry, Asegun

    2016-10-21

    Thermal conductivity is important for almost all applications involving heat transfer. The theory and modeling of crystalline materials is in some sense a solved problem, where one can now calculate their thermal conductivity from first principles using expressions based on the phonon gas model (PGM). However, modeling of amorphous materials still has many open questions, because the PGM itself becomes questionable when one cannot rigorously define the phonon velocities. In this report, we used our recently developed Green-Kubo modal analysis (GKMA) method to study amorphous silicon dioxide (a-SiO2). The predicted thermal conductivities exhibit excellent agreement with experiments and anharmonic effects are included in the thermal conductivity calculation for all the modes in a-SiO2 for the first time. Previously, localized modes (locons) have been thought to have a negligible contribution to thermal conductivity, due to their highly localized nature. However, in a-SiO2 our results indicate that locons contribute more than 10% to the total thermal conductivity from 400 K to 800 K and they are largely responsible for the increase in thermal conductivity of a-SiO2 above room temperature. This is an effect that cannot be explained by previous methods and therefore offers new insight into the nature of phonon transport in amorphous/glassy materials.

  12. Characteristics of Amorphous Silicon Nitride Films Deposited by LF-PECVD from SiH4/N2

    Institute of Scientific and Technical Information of China (English)

    ZHONG Zhi-qin; ZHANG Yi; YU Zhi-wei; DAI Li-ping; ZHANG Guo-jun; WANG Yu-mei; WANG Gang; WANG Shu-ya

    2009-01-01

    Amorphous silicon nitride films were deposited by low-frequency plasma-enhanced chemical vapor deposition(LF-PECVD) using silane and nitrogen as precursors. Characteristics such as deposition rate,surface morphology,and chemical composition were measured by spectroscopic ellipsometry(SE),atomic force microscope(AFM) and x-ray photoelectron spectroscopy(XPS).It was shown that amorphous silicon nitride film could be prepared by LF-PECVD with good uniformity and even surface.The XPS result indicated that a small quantity of oxygen was involved in the sample,which was discussed in this paper.

  13. Fabrication-Technology Research of New Type Silicon Magnetic-Sensitive Transistor

    Institute of Scientific and Technical Information of China (English)

    Xiaofeng Zhao; Dianzhong Wen

    2006-01-01

    This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with rectangle-plank-cubic structure fabricated on silicon wafer by MEMS technique. An experiment research on basic characteristic of the silicon magnetic-sensitive transistor was done. Anisotropic etching and reliable technique project were provided and applied in order to fabricate SMST with rectangle-plank-cubic construction. This means that a new kind of fabrication technology for silicon magnetic-sensitive transistor was provided. The result shows that the technique can be not only compatible with IC technology but also integrated easily, and has a wide application field.

  14. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    Science.gov (United States)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  15. Fabrication of PIN diode detectors on thinned silicon wafers

    CERN Document Server

    Ronchin, Sabina; Dalla Betta, Gian Franco; Gregori, Paolo; Guarnieri, Vittorio; Piemonte, Claudio; Zorzi, Nicola

    2004-01-01

    Thin substrates are one of the possible choices to provide radiation hard detectors for future high-energy physics experiments. Among the advantages of thin detectors are the low full depletion voltage, even after high particle fluences, the improvement of the tracking precision and momentum resolution and the reduced material budget. In the framework of the CERN RD50 Collaboration, we have developed p-n diode detectors on membranes obtained by locally thinning the silicon substrate by means of tetra-methyl ammonium hydroxide etching from the wafer backside. Diodes of different shapes and sizes have been fabricated on 57 and 99mum thick membranes. They have been tested, showing a very low leakage current ( less than 0.4nA/cm**2) and, as expected, a very low depletion voltage ( less than 1V for the 57mum membrane). The paper describes the technological approach used for devices fabrication and reports selected results from the electrical characterization.

  16. Rapid fabrication of a silicon modification layer on silicon carbide substrate.

    Science.gov (United States)

    Bai, Yang; Li, Longxiang; Xue, Donglin; Zhang, Xuejun

    2016-08-01

    We develop a kind of magnetorheological (MR) polishing fluid for the fabrication of a silicon modification layer on a silicon carbide substrate based on chemical theory and actual polishing requirements. The effect of abrasive concentration in MR polishing fluid on material removal rate and removal function shape is investigated. We conclude that material removal rate will increase and tends to peak value as the abrasive concentration increases to 0.3 vol. %, and the removal function profile will become steep, which is a disadvantage to surface frequency error removal at the same time. The removal function stability is also studied and the results show that the prepared MR polishing fluid can satisfy actual fabrication requirements. An aspheric reflective mirror of silicon carbide modified by silicon is well polished by combining magnetorheological finishing (MRF) using two types of MR polishing fluid and computer controlled optical surfacing (CCOS) processes. The surface accuracy root mean square (RMS) is improved from 0.087λ(λ=632.8  nm) initially to 0.020λ(λ=632.8  nm) in 5.5 h total and the tool marks resulting from MRF are negligible. The PSD analysis results also shows that the final surface is uniformly polished.

  17. Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer

    Directory of Open Access Journals (Sweden)

    Hideharu Matsuura

    2015-05-01

    Full Text Available Inexpensive high-resolution silicon (Si X-ray detectors are required for on-site surveys of traces of hazardous elements in food and soil by measuring the energies and counts of X-ray fluorescence photons radially emitted from these elements. Gated silicon drift detectors (GSDDs are much cheaper to fabricate than commercial silicon drift detectors (SDDs. However, previous GSDDs were fabricated from \\(10\\-k\\(\\Omega \\cdot\\cm Si wafers, which are more expensive than \\(2\\-k\\(\\Omega \\cdot\\cm Si wafers used in commercial SDDs. To fabricate cheaper portable X-ray fluorescence instruments, we investigate GSDDs formed from \\(2\\-k\\(\\Omega \\cdot\\cm Si wafers. The thicknesses of commercial SDDs are up to \\(0.5\\ mm, which can detect photons with energies up to \\(27\\ keV, whereas we describe GSDDs that can detect photons with energies of up to \\(35\\ keV. We simulate the electric potential distributions in GSDDs with Si thicknesses of \\(0.5\\ and \\(1\\ mm at a single high reverse bias. GSDDs with one gate pattern using any resistivity Si wafer can work well for changing the reverse bias that is inversely proportional to the resistivity of the Si wafer.

  18. Photoluminescence of amorphous carbon films fabricated by layer-by-layer hydrogen plasma chemical annealing method

    Institute of Scientific and Technical Information of China (English)

    徐骏; 黄晓辉; 李伟; 王立; 陈坤基

    2002-01-01

    A method in which nanometre-thick film deposition was alternated with hydrogen plasma annealing (layer-by-layermethod) was applied to fabricate hydrogenated amorphous carbon films in a conventional plasma-enhanced chemicalvapour deposition system. It was found that the hydrogen plasma treatment could decrease the hydrogen concentrationin the films and change the sp2/sp3 ratio to some extent by chemical etching. Blue photoluminescence was observed atroom temperature, as a result of the reduction of sp2 clusters in the films.

  19. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    Science.gov (United States)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  20. Design and characterization of ultra-stretchable monolithic silicon fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-10-13

    Stretchable electronic systems can play instrumental role for reconfigurable macro-electronics such as distributed sensor networks for wearable and bio-integrated electronics. Typically, polymer composite based materials and its deterministic design as interconnects are used to achieve such systems. Nonetheless, non-polymeric inorganic silicon is the predominant material for 90% of electronics. Therefore, we report the design and fabrication of an all silicon based network of hexagonal islands connected through spiral springs to form an ultra-stretchable arrangement for complete compliance to highly asymmetric shapes. Several design parameters are considered and their validation is carried out through finite element analysis. The fabrication process is based on conventional microfabrication techniques and the measured stretchability is more than 1000% for single spirals and area expansions as high as 30 folds in arrays. The reported method can provide ultra-stretchable and adaptable electronic systems for distributed network of high-performance macro-electronics especially useful for wearable electronics and bio-integrated devices.

  1. Multi-diameter silicon nanowires: Fabrication, characterization, and modeling

    Science.gov (United States)

    Alagoz, Arif Sinan

    Nanotechnology is a rapidly expanding interdisciplinary field offering novel devices for broad range of applications. Quantum effects and surface to volume ratio of nanostructures are strongly size dependent, and redefine material properties at nanoscale. Silicon is one of the most promising materials for next generation nanostructured transistors, photonics devices, Li-ion batteries, photovoltaic solar cells, and thermoelectric energy generators. Since electrical, optical, and mechanical properties of nanostructures strongly depend on their shape, size, periodicity, and crystal structure; it is crucial to control these parameters in order to optimize device performance for targeted applications. This dissertation is intended to develop a low-cost, low-temperature, high-throughput, and large-area nanowire fabrication method that can produce well-ordered arrays of hierarchical single-crystal silicon nanowires at large scale by using nanosphere lithography and metal-assisted chemical etching. Nanowire morphology was characterized by using scanning electron microscope and optical properties of nanowire arrays were modeled with the help of finite-difference-time domain method. These novel multi-diameter silicon nanowire arrays have the potential applications in many fields including but not limited to next generation nanowire solar cells to field ionization gas sensors.

  2. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    Science.gov (United States)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-08-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  3. Fabrication of Optical Multilayer Devices from Porous Silicon Coatings with Closed Porosity by Magnetron Sputtering.

    Science.gov (United States)

    Caballero-Hernández, Jaime; Godinho, Vanda; Lacroix, Bertrand; Jiménez de Haro, Maria C; Jamon, Damien; Fernández, Asunción

    2015-07-01

    The fabrication of single-material photonic-multilayer devices is explored using a new methodology to produce porous silicon layers by magnetron sputtering. Our bottom-up methodology produces highly stable amorphous porous silicon films with a controlled refractive index using magnetron sputtering and incorporating a large amount of deposition gas inside the closed pores. The influence of the substrate bias on the formation of the closed porosity was explored here for the first time when He was used as the deposition gas. We successfully simulated, designed, and characterized Bragg reflectors and an optical microcavity that integrates these porous layers. The sharp interfaces between the dense and porous layers combined with the adequate control of the refractive index and thickness allowed for excellent agreement between the simulation and the experiments. The versatility of the magnetron sputtering technique allowed for the preparation of these structures for a wide range of substrates such as polymers while also taking advantage of the oblique angle deposition to prepare Bragg reflectors with a controlled lateral gradient in the stop band wavelengths.

  4. Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching

    Directory of Open Access Journals (Sweden)

    Nikulin Valery

    2011-01-01

    Full Text Available Abstract Films of nanocrystalline silicon (nc-Si were prepared from hydrogenated amorphous silicon (a-Si:H by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.

  5. Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Schuettauf, J.W.A.; Van der Werf, C.H.M.; Kielen, I.M.; Van Sark, W.G.J.H.M.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics, Physics of Devices, Princetonplein 5, 3584 CC Utrecht (Netherlands)

    2012-09-15

    The influence of thermal annealing on the crystalline silicon surface passivating properties of selected amorphous silicon containing layer stacks (including intrinsic and doped films), as well as the correlation with silicon heterojunction solar cell performance has been investigated. All samples have been isochronally annealed for 1 h in an N{sub 2} ambient at temperatures between 150C and 300C in incremental steps of 15C. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation quality is observed up to 255C and 270C, respectively, and a deterioration at higher temperatures. For intrinsic/n-type a-Si:H layer stacks, a maximum minority carrier lifetime of 13.3 ms at an injection level of 10{sup 15} cm{sup -3} has been measured. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed upon annealing over the whole temperature range. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is inferred that the intrinsic/p-layer stack is limiting device performance. Furthermore, thermal annealing of p-type layers should be avoided entirely. We therefore propose an adapted processing sequence, leading to a substantial improvement in efficiency to 16.7%, well above the efficiency of 15.8% obtained with the 'standard' processing sequence.

  6. Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Jan

    2011-09-26

    single-chamber process for the fabrication of amorphous hydrogenated silicon thin-film solar cells. The main aspect is the suppression of boron cross-contamination. Before the deposition of the i-layer a boron doped p-layer is deposited and thus, after the p-layer deposition some of the boron remains in the recipient. In this work different solar cell configurations and reactor treatments are examined for their suppression of the boron cross-contamination. The various treatments are compared for their effectivity, their working principle, and their time consumption. Amongst the investigated reactor treatments the application of a H{sub 2}O-flush or a process chamber evacuation to 9 x 10{sup -7} mbar turned out to be most favourable in order to suppress the boron cross-contamination. (orig.)

  7. Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells

    NARCIS (Netherlands)

    Löffler, J.; Schropp, R.E.I.; Groenen, Ft.; Van De Sanden, M.C.M.; Linden, J.L.

    2000-01-01

    Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by Expanding Thermal Plasma Chemical Vapor Deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been char

  8. On the effect of the underlying ZnO:Al layer on the crystallization kinetics of hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Sharma, K.; Ponomarev, M. V.; M. C. M. van de Sanden,; Creatore, M.

    2013-01-01

    In this contribution, we analyze the thickness effect of the underlying aluminum doped-zinc oxide (ZnO:Al) layers on the structural properties and crystallization kinetics of hydrogenated amorphous silicon (a-Si:H) thin films. It is shown that the disorder in as-deposited a-Si:H films, as probed by

  9. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    NARCIS (Netherlands)

    Jobson, K.W.; Wells, J.P.R.; Schropp, R.E.I.; Vinh, N.Q.; Dijkhuis, J.I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si–H and Ge–H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe:H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to th

  10. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    NARCIS (Netherlands)

    Jobson, K. W.; Wells, J. P. R.; Schropp, R. E. I.; Vinh, N. Q.; Dijkhuis, J. I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si-H and Ge-H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe: H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to t

  11. Thermal stability of the optical band gap and structural order in hot-wire-deposited amorphous silicon

    CSIR Research Space (South Africa)

    Arendse, CJ

    2009-01-01

    Full Text Available The material properties of hydrogenated amorphous silicon (a-Si:H) have been known to change when exposed to elevated temperatures. In this work researchers report on the thermal stability of the optical band gap and structural disorder in hot...

  12. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  13. Fabrication of silicon based glass fibres for optical communication

    Indian Academy of Sciences (India)

    Vivek P Kude; R S Khairnar

    2004-02-01

    Silicon based glass fibres are fabricated by conventional fibre drawing process. First, preform fabrication is carried out by means of conventional MCVD technique by using various dopants such as SiCl4, GeCl4, POCl3, and FeCl3. The chemicals are used in such a way that step index single mode fibre can be drawn. The fibre drawing process consists of various steps such as heating the preform at elevated temperature, diameter monitor, primary and secondary coating, and ultra violet radiation curing. The fibres are then characterized for their geometrical and optical properties. The drawn fibre has diameter of core and cladding to be 8.3 m and 124.31 m, respectively whereas non-circularity is found to be 4.17% for core and 0.26% for cladding as seen from phase plot. Mode field diameter is found to be 8.9 m and 9.2 m using Peterman II and Gaussian method, respectively. The fabricated fibres showed the signal attenuation of 0.35 dB/km and 0.20 dB/km for 1310 nm and 1550 nm, respectively as measured by the optical time domain reflectometer (OTDR).

  14. Fabrication of Porous Silicon Based Humidity Sensing Elements on Paper

    Directory of Open Access Journals (Sweden)

    Tero Jalkanen

    2015-01-01

    Full Text Available A roll-to-roll compatible fabrication process of porous silicon (pSi based sensing elements for a real-time humidity monitoring is described. The sensing elements, consisting of printed interdigitated silver electrodes and a spray-coated pSi layer, were fabricated on a coated paper substrate by a two-step process. Capacitive and resistive responses of the sensing elements were examined under different concentrations of humidity. More than a three orders of magnitude reproducible decrease in resistance was measured when the relative humidity (RH was increased from 0% to 90%. A relatively fast recovery without the need of any refreshing methods was observed with a change in RH. Humidity background signal and hysteresis arising from the paper substrate were dependent on the thickness of sensing pSi layer. Hysteresis in most optimal sensing element setup (a thick pSi layer was still noticeable but not detrimental for the sensing. In addition to electrical characterization of sensing elements, thermal degradation and moisture adsorption properties of the paper substrate were examined in connection to the fabrication process of the silver electrodes and the moisture sensitivity of the paper. The results pave the way towards the development of low-cost humidity sensors which could be utilized, for example, in smart packaging applications or in smart cities to monitor the environment.

  15. Fabrication of silicon-based shape memory alloy micro-actuators

    Science.gov (United States)

    Johnson, A. David; Busch, John D.; Ray, Curtis A.; Sloan, Charles L.

    1992-01-01

    Thin film shape memory alloy has been integrated with silicon in a new actuation mechanism for microelectromechanical systems. This paper compares nickel-titanium film with other actuators, describes recent results of chemical milling processes developed to fabricate shape memory alloy microactuators in silicon, and describes simple actuation mechanisms which have been fabricated and tested.

  16. An overview of uncooled infrared sensors technology based on amorphous silicon and silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, Roberto; Mireles, Jose Jr. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, 32310 Chihuahua (Mexico); Moreno, Mario; Torres, Alfonso; Kosarev, Andrey [National Institute for Astrophysics Optics and Electronics INAOE, Luis E. Erro 1, PO Box 51 and 216, 7200 Puebla (Mexico); Heredia, Aurelio [Universidad Popular Autonoma del Estado de Puebla, 21 sur 1103 Col. Santiago, 72160 Puebla (Mexico)

    2010-04-15

    At the present time there are commercially available large un-cooled micro-bolometer arrays (as large as 1024 x 768 pixels) for a variety of thermal imaging applications. Different thermo-sensing materials have been employed as thermo sensing elements as Vanadium Oxide (VO{sub x}), metals, and amorphous and polycrystalline semiconductors. Those materials present good characteristics but also have some disadvantages. As a consequence none of the commercially available arrays contain optimum pixels with an optimum thermo-sensing material. This paper reviews the development of the un-cooled bolometer technology and the research achievements on this area, with special attention on the key factors that would lead to improve the pixels performance characteristics. The work considers the R and D of microbolometer arrays and the integration with MEMS and IC technologies. A comparative study with the state of the art and data reported in literature is presented. Finally, further directions of uncooled bolometer based in thin films materials are also discussed in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics

    Science.gov (United States)

    Kanechika, Masakazu; Mitsushima, Yasuichi

    2000-12-01

    A new process to fabricate a silicon needle, whose tip radius is about 5 nm and aspect ratio is about 7, was developed. The silicon needles were fabricated by highly selective anisotropic dry etching. The etching mask was oxygen precipitation, which was formed by nitrogen ion implantation and the subsequent oxidation. The process is simple enough to be integrated with complementary metal-oxide-semiconductor (CMOS) circuits. The density of the silicon needle can be controlled by adjusting the dose for nitrogen ion implantation. The position of the silicon needle can be controlled by adjusting the position for nitrogen ion implantation, because silicon needles are formed only in the nitrogen ion implantation area. Furthermore, using these silicon needles as micro emitters, a field emission diode was fabricated. The Fowler-Nordheim plot shows that the field around the tip of the silicon needles was highly enhanced.

  18. Nanometric Cutting of Silicon with an Amorphous-Crystalline Layered Structure: A Molecular Dynamics Study

    Science.gov (United States)

    Wang, Jinshi; Fang, Fengzhou; Zhang, Xiaodong

    2017-01-01

    Materials with specific nanometric layers are of great value in both theoretical and applied research. The nanometric layer could have a significant influence on the response to the mechanical loading. In this paper, the nanometric cutting on the layered systems of silicon has been studied by molecular dynamics. This kind of composite structure with amorphous layer and crystalline substrate is important for nanomachining. Material deformation, stress status, and chip formation, which are the key issues in nano-cutting, are analyzed. A new chip formation mechanism, i.e., the mixture of extrusion and shear, has been observed. In addition, from the perspective of engineering, some specific composite models show the desired properties due to the low subsurface damage or large material removal rate. The results enrich the cutting theory and provide guidance on nanometric machining.

  19. High-Sensitivity X-ray Polarimetry with Amorphous Silicon Active-Matrix Pixel Proportional Counters

    Science.gov (United States)

    Black, J. K.; Deines-Jones, P.; Jahoda, K.; Ready, S. E.; Street, R. A.

    2003-01-01

    Photoelectric X-ray polarimeters based on pixel micropattern gas detectors (MPGDs) offer order-of-magnitude improvement in sensitivity over more traditional techniques based on X-ray scattering. This new technique places some of the most interesting astronomical observations within reach of even a small, dedicated mission. The most sensitive instrument would be a photoelectric polarimeter at the focus of 2 a very large mirror, such as the planned XEUS. Our efforts are focused on a smaller pathfinder mission, which would achieve its greatest sensitivity with large-area, low-background, collimated polarimeters. We have recently demonstrated a MPGD polarimeter using amorphous silicon thin-film transistor (TFT) readout suitable for the focal plane of an X-ray telescope. All the technologies used in the demonstration polarimeter are scalable to the areas required for a high-sensitivity collimated polarimeter. Leywords: X-ray polarimetry, particle tracking, proportional counter, GEM, pixel readout

  20. Photoelectronic properties of hydrogenated amorphous silicon films deposited by R. F sputtering and glow discharge methods

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Rahman, M.; Madkour, H. (Faculty of Science, Aswan (Egypt)); Hassan, H.H.; El-Desouki, S. (Cairo Univ., Giza (Egypt))

    1989-09-01

    Hydrogenated amorphous silicon films a-Si:H were deposited by both R.F. sputtering in a planar magnetron configuration and glow discharge methods on Corning glass substrates at different substrate temperatures. The dc and ac photoconductivities of the deposited films were extensively studied as a function of temperature, photon energy and photo-excitation intensity. The results showed that, the dark and photoconductivities have different dependency regions on temperature with different activation energies in the range of 0.08-0.20 eV. It has been also found that the photoconductivity is influenced by the method of deposition and the deposition parameters, indicating that the density of gap states is sensitive to the deposition conditions. The photoconductivity ({sigma}{sub ph}) has a power dependence on the illumination intensity (I) of the form {sigma}{sub ph} {alpha} I {sup {nu}}, where {nu} is a constant and was found also to be increase with temperature.

  1. 10.5% efficient polymer and amorphous silicon hybrid tandem photovoltaic cell.

    Science.gov (United States)

    Kim, Jeehwan; Hong, Ziruo; Li, Gang; Song, Tze-bin; Chey, Jay; Lee, Yun Seog; You, Jingbi; Chen, Chun-Chao; Sadana, Devendra K; Yang, Yang

    2015-03-04

    Thin-film solar cells made with amorphous silicon (a-Si:H) or organic semiconductors are considered as promising renewable energy sources due to their low manufacturing cost and light weight. However, the efficiency of single-junction a-Si:H or organic solar cells is typically photovoltaic cell by employing an a-Si:H film as a front sub-cell and a low band gap polymer:fullerene blend film as a back cell on planar glass substrates. Monolithic integration of 6.0% efficienct a-Si:H and 7.5% efficient polymer:fullerene blend solar cells results in a power conversion efficiency of 10.5%. Such high-efficiency thin-film tandem cells can be achieved by optical management and interface engineering of fully optimized high-performance front and back cells without sacrificing photovoltaic performance in both cells.

  2. 10.5% efficient polymer and amorphous silicon hybrid tandem photovoltaic cell

    Science.gov (United States)

    Kim, Jeehwan; Hong, Ziruo; Li, Gang; Song, Tze-Bin; Chey, Jay; Lee, Yun Seog; You, Jingbi; Chen, Chun-Chao; Sadana, Devendra K.; Yang, Yang

    2015-03-01

    Thin-film solar cells made with amorphous silicon (a-Si:H) or organic semiconductors are considered as promising renewable energy sources due to their low manufacturing cost and light weight. However, the efficiency of single-junction a-Si:H or organic solar cells is typically photovoltaic cell by employing an a-Si:H film as a front sub-cell and a low band gap polymer:fullerene blend film as a back cell on planar glass substrates. Monolithic integration of 6.0% efficienct a-Si:H and 7.5% efficient polymer:fullerene blend solar cells results in a power conversion efficiency of 10.5%. Such high-efficiency thin-film tandem cells can be achieved by optical management and interface engineering of fully optimized high-performance front and back cells without sacrificing photovoltaic performance in both cells.

  3. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

    1994-10-01

    We describe the characteristics of thin (1 {mu}m) and thick (>30 {mu}m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and {gamma} rays. For x-ray, {gamma} ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed.

  4. Direct visualization of photoinduced glassy dynamics on the amorphous silicon carbide surface by STM movies

    Science.gov (United States)

    Nguyen, Duc; Nienhaus, Lea; Haasch, Richard T.; Lyding, Joseph; Gruebele, Martin

    2015-03-01

    Glassy dynamics can be controlled by light irradiation. Sub- and above-bandgap irradiation cause numerous phenomena in glasses including photorelaxation, photoexpansion, photodarkening and pohtoinduced fluidity. We used scanning tunneling microscopy to study surface glassy dynamics of amorphous silicon carbide irradiated with above- bandgap 532 nm light. Surface clusters of ~ 4-5 glass forming unit in diameter hop mostly in a two-state fashion, both without and with irradiation. Upon irradiation, the average surface hopping activity increases by a factor of 3. A very long (~1 day) movie of individual clusters with varying laser power density provides direct evidence for photoinduced enhanced hopping on the glass surfaces. We propose two mechanisms: heating and electronic for the photoenhanced surface dynamics.

  5. Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films

    CERN Document Server

    Ebothe, J; Cabarrocas, P R I; Godet, C; Equer, B

    2003-01-01

    Acoustically induced second harmonic generation (AISHG) in hydrogenated amorphous silicon (a-Si : H) films of different morphology has been observed. We have found that with increasing acoustical power, the optical SHG of Gd : YAB laser light (lambda = 2.03 mu m) increases and reaches its maximum value at an acoustical power density of about 2.10 W cm sup - sup 2. With decreasing temperature, the AISHG signal strongly increases below 48 K and correlates well with the temperature behaviour of differential scanning calorimetry indicating near-surface temperature phase transition. The AISHG maxima were observed at acoustical frequencies of 10-11, 14-16, 20-22 and 23-26 kHz. The independently performed measurements of the acoustically induced IR spectra have shown that the origin of the observed phenomenon is the acoustically induced electron-phonon anharmonicity in samples of different morphology.

  6. Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

    Energy Technology Data Exchange (ETDEWEB)

    van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2007-01-23

    The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

  7. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

    Science.gov (United States)

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

    2014-10-07

    In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

  8. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

    KAUST Repository

    Mughal, Asad Jahangir

    2014-01-01

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material\\'s luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon. This journal is

  9. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

    Science.gov (United States)

    Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

    2014-12-14

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

  10. Effect of back reflectors on photon absorption in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Hossain, Mohammad I.; Qarony, Wayesh; Hossain, M. Khalid; Debnath, M. K.; Uddin, M. Jalal; Tsang, Yuen Hong

    2017-08-01

    In thin-film solar cells, the photocurrent conversion productivity can be distinctly boosted-up utilizing a proper back reflector. Herein, the impact of different smooth and textured back reflectors was explored and effectuated to study the optical phenomena with interface engineering strategies and characteristics of transparent contacts. A unique type of wet-chemically textured glass-substrate 3D etching mask used in superstrate (p-i-n) amorphous silicon-based solar cell along with legitimated back reflector permits joining the standard light-trapping methodologies, which are utilized to upgrade the energy conversion efficiency (ECE). To investigate the optical and electrical properties of solar cell structure, the optical simulations in three-dimensional measurements (3D) were performed utilizing finite-difference time-domain (FDTD) technique. This design methodology allows to determine the power losses, quantum efficiencies, and short-circuit current densities of various layers in such solar cell. The short-circuit current densities for different reflectors were varied from 11.50 to 13.27 and 13.81 to 16.36 mA/cm2 for the smooth and pyramidal textured solar cells, individually. Contrasted with the comparable flat reference cell, the short-circuit current density of textured solar cell was increased by around 24%, and most extreme outer quantum efficiencies rose from 79 to 86.5%. The photon absorption was fundamentally improved in the spectral region from 600 to 800 nm with no decrease of photocurrent shorter than 600-nm wavelength. Therefore, these optimized designs will help to build the effective plans next-generation amorphous silicon-based solar cells.

  11. Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Laxmi Karki Gautam

    2016-02-01

    Full Text Available Optimization of thin film photovoltaics (PV relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in the full hydrogenated amorphous silicon (a-Si:H PV device configuration. The nucleation and evolution of crystallites forming from the amorphous phase were studied using in situ near-infrared to ultraviolet spectroscopic ellipsometry during growth of films prepared as a function of hydrogen to reactive gas flow ratio R = [H2]/[SiH4]. In conjunction with higher photon energy measurements, the presence and relative absorption strength of silicon-hydrogen infrared modes were measured by infrared extended ellipsometry measurements to gain insight into chemical bonding. Structural and optical models have been developed for the back reflector (BR structure consisting of sputtered undoped zinc oxide (ZnO on top of silver (Ag coated glass substrates. Characterization of the free-carrier absorption properties in Ag and the ZnO + Ag interface as well as phonon modes in ZnO were also studied by spectroscopic ellipsometry. Measurements ranging from 0.04 to 5 eV were used to extract layer thicknesses, composition, and optical response in the form of complex dielectric function spectra (ε = ε1 + iε2 for Ag, ZnO, the ZnO + Ag interface, and undoped a-Si:H layer in a substrate n-i-p a-Si:H based PV device structure.

  12. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  13. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    CERN Document Server

    Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

  14. Plasma induced by pulsed laser and fabrication of silicon nanostructures

    Science.gov (United States)

    Hang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Liu, Liu Shi-Rong; Huang, Zhong-Mei; Miao, Xin-Jian; Lv, Quan; Qin, Chao-Jian

    2015-08-01

    It is interesting that in preparing process of nanosilicon by pulsed laser, the periodic diffraction pattern from plasmonic lattice structure in the Purcell cavity due to interaction between plasmons and photons is observed. This kind of plasmonic lattice structure confined in the cavity may be similar to the Wigner crystal structure. Emission manipulation on Si nanostructures fabricated by the plasmonic wave induced from pulsed laser is studied by using photoluminescence spectroscopy. The electronic localized states and surface bonding are characterized by several emission bands peaked near 600 nm and 700 nm on samples prepared in oxygen or nitrogen environment. The electroluminescence wavelength is measured in the telecom window on silicon film coated by ytterbium. The enhanced emission originates from surface localized states in band gap due to broken symmetry from some bonds on surface bulges produced by plasmonic wave in the cavity. Project supported by the National Natural Science Foundation of China (Grant Nos. 11264007 and 61465003).

  15. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  16. The fabrication of quantum wires in silicon utilising the characteristics of solid phase epitaxial regrowth of crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liu, A.C.Y.; McCallum, J.C. [Melbourne Univ. Parkville, VIC (Australia). School of Physics, Microanalytical Research Centre

    1998-06-01

    The process of solid phase epitaxy (SPE) in semiconductor materials is one which has been intensively researched due to possible applications in the semiconductor industry. SPE is a solid phase transformation, in which an amorphous layer can be recrystallized either through heating or a combination of heating and ion bombardment. The transformation is believed to occur exclusively at the interface between the amorphous and crystalline layers, with individual atoms from the amorphous phase being incorporated into the crystalline phase by some point defect mechanism. The process has been observed to follow an Arrhenius temperature dependence. A wafer silicon was subjected to a multi-energy silicon implant through a fine nickel grid to amorphise region to a depth of 5{mu}m creating an array of amorphous wells. Metal impurity atoms were then implanted in this region at energy of 500 keV. Samples were examined using an optical microscope and the Alphastep profiler at RMIT. It was confirmed that burgeoning wells were about 2 {mu}m wide and rose about 0.01 {mu}m above the silicon substrate. Extended abstract. 4 refs., 3 figs.

  17. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  18. DRIE fabrication of notch-free silicon structures using a novel silicon-on-patterned metal and glass wafer

    Science.gov (United States)

    Kim, Ki Hoon; Kim, Sang Cheol; Park, Kyu Yeon; Yang, Sang Sik

    2011-04-01

    This paper presents a method of fabricating a silicon structure without notches using a new kind of substrate consisting of silicon-on-patterned metal and glass (SOMG). It has a metal interlayer with a thickness of 0.1 µm between a silicon wafer and glass wafer as an insulation layer to eliminate the micro-charging effect on the insulation surface for the silicon dry etching process. This substrate is fabricated by anodic bonding and polishing. To ascertain the effect of the SOMG substrate, 100 µm deep silicon structures with 5 and 20 µm wide trenches have been etched on SOG (silicon-on-glass) and SOMG substrates under similar conditions. In order to perform the deep silicon etching process, a thick photoresist of AZ9260 is used as a dry etch mask. In the results, no notches are on SOMG, while notches occur on SOG. Also, regardless of the over-etching time as the dimensions of the area to be etched, no notches are formed at the bottom of the silicon structure. This results in a notchless silicon structure. This research shows the feasibility of applying this technique to many applications using silicon devices.

  19. Numerical Analysis of Lamellar Gratings for Light-Trapping in Amorphous Silicon Solar Cells

    CERN Document Server

    Gablinger, David I

    2015-01-01

    In this paper, we calculate the material specific absorption accurately using a modal method by determining the integral of the Poynting vector around the boundary of a specific material. Given that the accuracy of our method is only determined by the number of modes included, the material specific absorption can be used as a quality measure for the light-trapping performance. We use this method to investigate metallic gratings and find nearly degenerate plasmons at the interface between metal and amorphous silicon (a-Si). The plasmons cause large undesired absorption in the metal part of a grating as used in a-Si cells. We explore ways to alleviate the parasitic absorption in the metal by appropriate choice of the geometry. Separating the diffraction grating from the back reflector helps, lining silver or aluminum with a dielectric helps as well. Gratings with depth > 60nm are preferred, and periods > 600nm are not useful. Maximum absorption in silicon can occur for less thick a-Si than is standard. We also ...

  20. The Effects of Hydrogen on the Potential-Energy Surface of Amorphous Silicon

    Science.gov (United States)

    Joly, Jean-Francois; Mousseau, Normand

    2012-02-01

    Hydrogenated amorphous silicon (a-Si:H) is an important semiconducting material used in many applications from solar cells to transistors. In 2010, Houssem et al. [1], using the open-ended saddle-point search method, ART nouveau, studied the characteristics of the potential energy landscape of a-Si as a function of relaxation. Here, we extend this study and follow the impact of hydrogen doping on the same a-Si models as a function of doping level. Hydrogen atoms are first attached to dangling bonds, then are positioned to relieve strained bonds of fivefold coordinated silicon atoms. Once these sites are saturated, further doping is achieved with a Monte-Carlo bond switching method that preserves coordination and reduces stress [2]. Bonded interactions are described with a modified Stillinger-Weber potential and non-bonded Si-H and H-H interactions with an adapted Slater-Buckingham potential. Large series of ART nouveau searches are initiated on each model, resulting in an extended catalogue of events that characterize the evolution of potential energy surface as a function of H-doping. [4pt] [1] Houssem et al., Phys Rev. Lett., 105, 045503 (2010)[0pt] [2] Mousseau et al., Phys Rev. B, 41, 3702 (1990)

  1. Band engineering of amorphous silicon ruthenium thin film and its near-infrared absorption enhancement combined with nano-holes pattern on back surface of silicon substrate

    Science.gov (United States)

    Guo, Anran; Zhong, Hao; Li, Wei; Gu, Deen; Jiang, Xiangdong; Jiang, Yadong

    2016-10-01

    Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its bandgap limit. In this study, a narrow bandgap silicon rich semiconductor is achieved by introducing ruthenium (Ru) into amorphous silicon (a-Si) to form amorphous silicon ruthenium (a-Si1-xRux) thin films through co-sputtering. The increase of Ru concentration leads to an enhancement of light absorption and a narrower bandgap. Meanwhile, a specific light trapping technique is employed to realize high absorption of a-Si1-xRux thin film in a finite thickness to avoid unnecessary carrier recombination. A double-layer absorber comprising of a-Si1-xRux thin film and silicon random nano-holes layer is formed on the back surface of silicon substrates, and significantly improves near-infrared absorption while the leaky light intensity is less than 5%. This novel absorber, combining narrow bandgap thin film with light trapping structure, may have a potential application in near-infrared photoelectronic devices.

  2. Microcrystalline B-doped window layers prepared near amorphous to microcrystalline transition by HWCVD and its application in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, P. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany)]. E-mail: kumarp@rhrk.uni-kl.de; Kupich, M. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany); Grunsky, D. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany); Schroeder, B. [Department of Physics/Center of Optical Technologies and Laser Controlled Processes, University of Kaiserslautern, P.O. Box 3049, Kaiserslautern D-67653 (Germany)

    2006-04-20

    The electronic and structural properties of p-type microcrystalline silicon films prepared near the microcrystalline to amorphous ({mu}c-amorphous) transition by hot-wire chemical vapor deposition are studied. Silane is used as a source gas while H{sub 2} as diluent and trimethylboron (TMB) and boron trifluoride (BF{sub 3}) as doping gases. Increasing TMB concentration from 0.01% to 5% favors the amorphous growth whereas for BF{sub 3} the crystalline fraction remains constant. The dark conductivity ({sigma} {sub d}) of {mu}c-Si:H p-layers remains approximately constant for TMB 1-5% at constant crystalline fraction X {sub c}. This dark conductivity behavior is attributed to the decrease in doping efficiency with increasing TMB concentration. The best initial efficiency obtained for a 400 nm amorphous pin solar cell with optimized {mu}c-Si:H p-layer is 7.7% (V {sub oc} = 874 mV, J {sub sc} = 12.91 mA/cm{sup 2}, FF = 68%)

  3. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  4. Fabrication of nanoporous silver by de-alloying Cu-Zr-Ag amorphous alloys

    Science.gov (United States)

    Wang, Hui; Xiao, Shang-gang; Zhang, Tao

    2016-07-01

    Nanoporous silver (NPS) with a ligament size ranging from 15 to 40 nm was fabricated by de-alloying (Cu50Zr50)100- x Ag x ( x = 10at%, 20at%, 30at%, and 40at%) amorphous ribbons in a mixed aqueous solution of hydrofluoric (HF) acid and nitric acid under free corrosion conditions. Nanoporous silver ligaments and pore sizes were able to be fine-tuned through tailoring the chemical composition, corrosion conditions, and de-alloying time. The ligament size increases with an increase in Ag content and de-alloying time, but decreases with an increase in HF concentration. This phenomenon may be attributed to the dissolution of Zr/Cu and the diffusion, aggregation, nucleation, and recrystallization of Ag, leading to an oriented attachment of adjacent nanocrystals as revealed by TEM analysis.

  5. Fabrication of nanoporous silver by de-alloying CuZrAg amorphous alloys

    Institute of Scientific and Technical Information of China (English)

    Hui Wang; Shang-gang Xiao; Tao Zhang

    2016-01-01

    Nanoporous silver (NPS) with a ligament size ranging from 15 to 40 nm was fabricated by de-alloying (Cu50Zr50)100-xAgx (x = 10at%, 20at%, 30at%, and 40at%) amorphous ribbons in a mixed aqueous solution of hydrofluoric (HF) acid and nitric acid under free cor-rosion conditions. Nanoporous silver ligaments and pore sizes were able to be fine-tuned through tailoring the chemical composition, corro-sion conditions, and de-alloying time. The ligament size increases with an increase in Ag content and de-alloying time, but decreases with an increase in HF concentration. This phenomenon may be attributed to the dissolution of Zr/Cu and the diffusion, aggregation, nucleation, and recrystallization of Ag, leading to an oriented attachment of adjacent nanocrystals as revealed by TEM analysis.

  6. Development of ultrafine and pure amorphous and crystalline new materials and their fabrication process

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Myung Seung; Kim, Y. E.; Kim, J. G.; Gu, J. H. [Korea Atomic Energy Research Inst., Taejon (Korea, Republic of); Yoon, N. K.; Seong, S. Y. [Myongseong Ceramics Co., Taejon (Korea, Republic of); Ryu, S. E. [Paichai Univ., Taejon (Korea, Republic of); Lee, J. C. [Myongji Univ., Taejon (Korea, Republic of)

    1996-07-01

    Based on an estimation of annual rice production of 5.2 Million tons, rice husks by-production reaches to 1.17 Million tons per year in Korea. distinguished to other corns, rice contains a lot of Si; 10 {approx} 20 % by weight in rice husks calculated as silica. The aim of this research project is to develop technologies for ceramic powders and materials utilizing the silica in rice husks called phytoliths. In this researches of the following subjects were performed; decomposition of the organic components, acid treatments, extraction of the organic matter, effect of gamma-ray irradiation on the acid treatment, plasma treatment, crystallization of silica powder, dispersion of amorphous silica powder, fabrication of ultrafine crystalline fibrous materials.. (author). 18 refs., 5 tabs., 55 figs.

  7. Fabrication, Characterization, and Functionalization of Porous Nanocrystalline Silicon Membranes

    Science.gov (United States)

    Fang, David Z.

    Porous nanocrystalline silicon (pnc-Si) membranes are promising for a wide range of applications from biofiltration to use as a platform for cell culture. It is an order of magnitude thinner than any commercially available or experimentally fabricated membrane. Because the thickness of a pnc-Si membrane is between 15 nm and 30 nm, comparable to the size of molecules to be separated, mass transport through the membrane is greatly enhanced. The first part of this work focuses on the fabrication of pnc-Si. For applications involving separation and concentration of molecular species, it is crucial that a membrane passes certain species while rejecting others. One manner in which this can be achieved is by tuning the size and density of the pores by changing key fabrication conditions. These parameters are identified and a systematic study was performed to determine their effect on pore morphology. In the second part of this work, a phenomenological model for pore formation is presented based on empirical observations and prior studies on polycrystalline materials. Next, the structural, optical, and mechanical properties of pnc-Si are examined using an array of characterization tools. In the final part of this thesis, post-production methods for pore size control and functionalization are discussed. It is demonstrated that the hydraulic permeability of pnc-Si, in both the unmodified and modified forms, follows theoretical predications for transport through an ultrathin porous material. Additonally, nanoparticle and protein separations are presented as a demonstration of the potential use of pnc-Si membranes in biomedical research and industry.

  8. Method of Stabilizing the Surface Energy of Fabrics Coated with Silicone

    Institute of Scientific and Technical Information of China (English)

    Di Jianfeng(狄剑峰); Perwueiz Anne; Gueguen Virginie; Lam Thanh My

    2001-01-01

    Silicone coatings have been used in this study. The method adopted was the liquid drop analysis on the coated fabrics. The contact angle between a liquid drop and the fabric surface was measured with two liquids continuously and recorded by a computer. The surface energy was calculated by means of Owens method.Kinetic measurement was adopted. The contact angle of liquids on the fabric coated silicone decreased with time was found. A compound solution DX has been found, so that the contact angle of the liquids on the fabric washed with DX becomes constant, and the surface energy of the fabric can be reduced to below 15 mJ/m2.

  9. Nanocrystalline silicon and silicon quantum dots formation within amorphous silicon carbide by plasma enhanced chemical vapour deposition method controlling the Argon dilution of the process gases

    Energy Technology Data Exchange (ETDEWEB)

    Kole, Arindam; Chaudhuri, Partha, E-mail: erpc@iacs.res.in

    2012-11-01

    Structural and optical properties of the amorphous silicon carbide (a-SiC:H) thin films deposited by radio frequency plasma enhanced chemical vapour deposition method from a mixture of silane (SiH{sub 4}) and methane (CH{sub 4}) diluted in argon (Ar) have been studied with variation of Ar dilution from 94% to 98.4%. It is observed that nanocrystalline silicon starts to form within the a-SiC:H matrix by increasing the dilution to 96%. With further increase in Ar dilution to 98% formation of the silicon nanocrystals (nc-Si) with variable size is enhanced. The optical band gap (E{sub g}) of the a-SiC:H film decreases from 2.0 eV to 1.9 eV with increase in Ar dilution from 96% to 98% as the a-SiC:H films gradually become Si rich. On increasing the Ar dilution further to 98.4% leads to the appearance of crystalline silicon quantum dots (c-Si q-dots) of nearly uniform size of 3.5 nm. The quantum confinement effect is apparent from the sharp increase in the E{sub g} value to 2.6 eV. The phase transformation phenomenon from nc-Si within the a-SiC:H films to Si q-dot were further studied by high resolution transmission electron microscopy and the grazing angle X-ray diffraction spectra. A relaxation in the lattice strain has been observed with the formation of Si q-dots.

  10. A critical appraisal of the factors affecting energy production from amorphous silicon photovoltaic arrays in a maritime climate

    Energy Technology Data Exchange (ETDEWEB)

    Gottschalg, R.; Betts, T.R.; Williams, S.R.; Sauter, D.; Infield, D.G. [Loughborough University (United Kingdom). Department of Electronic and Electrical Engineering, Centre for Renewable Energy Systems Technology; Kearney, M.J. [University of Surrey, Guildford (United Kingdom). School of Electronics and Physical Sciences, Advanced Technology Institute

    2004-12-01

    Contradictory reports exist in the literature regarding the energy production from amorphous silicon photovoltaic arrays. The majority claims high-energy output compared to crystalline silicon arrays of the same power rating (i.e. high kW h/kW{sub p}), but some reports point to less favourable comparisons. The reasons for these conflicting reports are investigated using long-term measurements of the I-V characteristics of a number of amorphous silicon devices, in conjunction with in situ measurements of the solar spectrum and other relevant environmental parameters. It is shown that the variation in the performance of devices produced by different manufacturers is so significant that one cannot speak of the performance of amorphous silicon devices in general; one has to investigate each type of amorphous silicon panel separately. The causes of differences in energy production are investigated in detail. The major factor impacting on the seasonal performance in the UK is identified to be variations in the solar spectrum. Single junction devices exhibit some seasonal thermal annealing but multi-junctions do not show this effect at a significant level. Scope for further improvement is identified, largely in the photon absorption. The response to different spectra can be modified to some extent, which would bridge the gap between the best and the worst performers in the field. It is also shown that in the case of multi-junction devices an optimised current matching might bring a 5% increase in energy production for this location. Differences in the magnitude of the fill factor have been identified to be the second most significant cause for performance variation between the different samples in the test, suggesting additional scope for improvement. (author)

  11. Physical Properties of Polyester Fabrics Treated with Nano, Micro and Macro Emulsion Silicones

    Science.gov (United States)

    Parvinzadeh, M.; Hajiraissi, R.

    2007-08-01

    The processing of textile to achieve a particular handle is one of the most important aspects of finishing technology. Fabrics softeners are liquid composition added to washing machines during the rinse cycle to make clothes feel better to the touch. The first fabric softeners were developed by the textile industry during the early twentieth century. In this research polyester fabrics were treated with nano, micro and macro emulsion silicone softeners. Some of the physical properties of the treated fabric samples are discussed. The drapeability of treated samples was improved after treatment with nano silicone softeners. The colorimetric measurement of softener-treated fabrics is evaluated with a reflectance spectrophotometer. Moisture regain of treated samples is increased due to coating of silicone softeners. There is some increase in the weight of softener-treated samples. Samples treated with nano emulsion silicones gave better results compared to micro- and macro-emulsion treated ones.

  12. SILICON COMPATIBLE ACOUSTIC WAVE RESONATORS: DESIGN, FABRICATION AND PERFORMANCE

    Directory of Open Access Journals (Sweden)

    Aliza Aini Md Ralib

    2014-12-01

    Full Text Available ABSTRACT: Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growth in wireless products. The bulky size of discrete vibrating mechanical devices such as quartz crystals and surface acoustic wave resonators impedes the ultimate miniaturization of single-chip transceivers. Fabrication of acoustic wave resonators on silicon allows complete integration of a resonator with its accompanying circuitry.  Integration leads to enhanced performance, better functionality with reduced cost at large volume production. This paper compiles the state-of-the-art technology of silicon compatible acoustic resonators, which can be integrated with interface circuitry. Typical acoustic wave resonators are surface acoustic wave (SAW and bulk acoustic wave (BAW resonators.  Performance of the resonator is measured in terms of quality factor, resonance frequency and insertion loss. Selection of appropriate piezoelectric material is significant to ensure sufficient electromechanical coupling coefficient is produced to reduce the insertion loss. The insulating passive SiO2 layer acts as a low loss material and aims to increase the quality factor and temperature stability of the design. The integration technique also is influenced by the fabrication process and packaging.  Packageless structure using AlN as the additional isolation layer is proposed to protect the SAW device from the environment for high reliability. Advancement in miniaturization technology of silicon compatible acoustic wave resonators to realize a single chip transceiver system is still needed. ABSTRAK: Kemajuan yang berterusan dalam teknologi tanpa wayar dan silikon telah menguatkan pertumbuhan yang menarik dalam produk tanpa wayar. Saiz yang besar bagi peralatan mekanikal bergetar seperti kristal kuarza menghalang pengecilan untuk merealisasikan peranti cip. Silikon serasi  gelombang akustik resonator mempunyai potensi yang besar untuk menggantikan unsur

  13. Tailoring the Mechanical Properties of High-Aspect-Ratio Carbon Nanotube Arrays using Amorphous Silicon Carbide Coatings

    NARCIS (Netherlands)

    Poelma, R.H.; Morana, B.; Vollebregt, S.; Schlangen, H.E.J.G.; Van Zeijl, H.W.; Fan, X.; Zhang, G.Q.

    2014-01-01

    The porous nature of carbon nanotube (CNT) arrays allows for the unique opportunity to tailor their mechanical response by the infiltration and deposition of nanoscale conformal coatings. Here, we fabricate novel photo-lithographically defined CNT pillars that are conformally coated with amorphous s

  14. Tailoring the Mechanical Properties of High-Aspect-Ratio Carbon Nanotube Arrays using Amorphous Silicon Carbide Coatings

    NARCIS (Netherlands)

    Poelma, R.H.; Morana, B.; Vollebregt, S.; Schlangen, H.E.J.G.; Van Zeijl, H.W.; Fan, X.; Zhang, G.Q.

    2014-01-01

    The porous nature of carbon nanotube (CNT) arrays allows for the unique opportunity to tailor their mechanical response by the infiltration and deposition of nanoscale conformal coatings. Here, we fabricate novel photo-lithographically defined CNT pillars that are conformally coated with amorphous

  15. Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions

    Science.gov (United States)

    Maslova, O. A.; Alvarez, J.; Gushina, E. V.; Favre, W.; Gueunier-Farret, M. E.; Gudovskikh, A. S.; Ankudinov, A. V.; Terukov, E. I.; Kleider, J. P.

    2010-12-01

    Heterojunctions made of hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) are examined by conducting probe atomic force microscopy. Conductive channels at both (n )a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the c-Si surface in agreement with previous planar conductance measurements. The presence of a hole gas in (p )a-Si:H/(n)c-Si structures implies a quite large valence band offset (EVc-Si-EVa-Si:H>0.25 eV).

  16. Deformation of an amorphous polymer during the fused-filament-fabrication method for additive manufacturing

    Science.gov (United States)

    McIlroy, Claire; Olmsted, Peter D.

    2017-03-01

    3D printing is rapidly becoming an effective means of prototyping and creating custom consumer goods. The most common method for printing a polymer melt is fused filament fabrication (FFF), and involves extrusion of a thermoplastic material through a heated nozzle; the material is then built up layer-by-layer to fabricate a three-dimensional object. Under typical printing conditions the melt experiences high strain rates within the FFF nozzle, which are able to significantly stretch and orient the polymer molecules. In this paper, we model the deformation of an amorphous polymer melt during the extrusion process, where the fluid must make a 90$^\\text{o}$ turn. The melt is described by a modified version of the Rolie-Poly model, which allows for flow-induced changes in the entanglement density. The complex polymer configurations in the cross-section of a printed layer are quantified and visualised. The deposition process involving the corner flow geometry dominates the deformation and significantly disentangles the melt.

  17. Lab-on-chip system combining a microfluidic-ELISA with an array of amorphous silicon photosensors for the detection of celiac disease epitopes

    National Research Council Canada - National Science Library

    Francesca Costantini; Cristiana Sberna; Giulia Petrucci; Cesare Manetti; Giampiero de Cesare; Augusto Nascetti; Domenico Caputo

    2015-01-01

    This work presents a lab-on-chip system, which combines a glass-polydimethilsiloxane microfluidic network and an array of amorphous silicon photosensors for the diagnosis and follow-up of Celiac disease...

  18. Fabrication and secondary-phase crystallization of rare-earth disilicate-silicon nitride ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Cinibulk, M.K.; Thomas, G. (Lawrence Berkeley Lab., CA (United States). Center for Advanced Materials); Johnson, S.M. (SRI International, Menlo Park, CA (United States). Materials Research Lab.)

    1992-08-01

    In this paper, the fabrication and intergranular-phase devitrification of silicon nitride densified with rare-earth (RE) oxide additives is investigated. The additions of the oxides of Sm, Gd, Dy, Er, and Yb, having high melting points and behaving similarly to Y[sub 2]O[sub 3], were compositionally controlled to tailor a microstructure with a crystalline secondary phase of RE[sub 2]Si[sub 2]O[sub 7]. The lanthanide oxides were found to be ass effective as Y[sub 2]O[sub 3] in densifying Si[sub 3]N[sub 4], resulting in identical microstructures and densities of 98-99% of theoretical density. The crystallization behavior of all six disilicates was similar, characterized by a limited nucleation and rapid growth mechanism resulting in large single crystals. Complete crystallization of the intergranular phase was obtained with the exception of a thin residual amorphous film which was observed at interfaces and believed to be rich in impurities, the cause of incomplete devitrification.

  19. Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Senouci, D. [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Baghdad, R., E-mail: r_baghdad@mail.univ-tiaret.dz [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); Belfedal, A.; Chahed, L. [LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Portier, X. [CIMAP, CEA, CNRS UMR 6252-ENSICAEN, UCBN, 6 Bvd Marechal Juin, 14050 Caen Cedex (France); Charvet, S. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France); Kim, K.H. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); TOTAL S.A., Gas and Power, R and D Division, Courbevoie (France); Roca i Cabarrocas, P. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); Zellama, K. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France)

    2012-11-01

    We present an investigation on the transition from amorphous to nanocrystalline silicon and associated hydrogen changes during the first steps of hydrogenated nanocrystalline silicon growth for films elaborated by reactive radiofrequency magnetron sputtering at a substrate temperature as low as room temperature and for deposition times varying from 3 to 60 min. Complementary experimental techniques have been used to characterize the films in their as-deposited state. They are completed by thermal hydrogen effusion experiments conducted in the temperature range, from room temperature to 800 Degree-Sign C. The results show that, during the initial stages of growth, the presence of a hydrogen-rich layer is necessary to initiate the crystallization process. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline silicon growth at room temperature. Black-Right-Pointing-Pointer Transition from amorphous to nanocrystalline silicon. Black-Right-Pointing-Pointer Chemical reactions of H atoms with strained Si-Si bonds. Black-Right-Pointing-Pointer H selective etching and chemical transport caused the silicon nucleation.

  20. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    Energy Technology Data Exchange (ETDEWEB)

    Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  1. The Temperature Dependence Coefficients of Amorphous Silicon and Crystalline Photovoltaic Modules Using Malaysian Field Test Investigation

    Directory of Open Access Journals (Sweden)

    Sulaiman Shaari

    2009-01-01

    Full Text Available The temperature dependence coefficients of amorphous silicon and crystalline photovoltaic (PV modules using Malaysian field data have been obtained using linear regression technique. This is achieved by studying three test stand-alone PV-battery systems using 62 Wp a-Si, 225 Wp multi-crystalline and 225 Wp mono-crystalline PV modules. These systems were designed to provide electricity for rural domestic loads at 200 W, 500 W and 530 W respectively. The systems were installed in the field with data monitored using data loggers. Upon analysis, the study found that the normalized power output per operating array temperature for the amorphous silicon modules, multi-crystalline modules and mono-crystalline modules were: +0.037 per°C, +0.0225 per °C and +0.0263 per °C respectively. In addition, at a solar irradiance value of 500 Wm-2, the current, voltage, power and efficiency dependence coefficients on operating array temperatures obtained from linear regression were: +37.0 mA per °C, -31.8 mV per °C, -0.1036 W per °C and -0.0214% per °C, for the a-Si modules, +22.5 mA per °C, -39.4 mV per °C, -0.2525 W per °C, -0.072 % per °C for the multi-crystalline modules and +26.3 mA per °C, -32.6 mV per °C, -0.1742 W per °C, -0.0523 % per °C for the mono-crystalline modules. These findings have a direct impact on all systems design and sizing in similar climate regions. It is thus recommended that the design and sizing of PV systems in the hot and humid climate regions of the globe give due address to these findings.

  2. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual technical report, April 1, 1995--March 31, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, R.G.; Sato, H.; Liang, H.; Liu, X.; Thornton, J. [Harvard Univ., Cambridge, MA (United States)

    1996-08-01

    The general objective is to develop methods to deposit materials which can be used to make more efficient solar cells. The work is organized into three general tasks: Task 1. Develop improved methods for depositing and using transparent conductors of fluorine-doped zinc oxide in amorphous silicon solar cells Task 2. Deposit and evaluate titanium oxide as a reflection-enhancing diffusion barrier between amorphous silicon and an aluminum or silver back-reflector. Task 3. Deposit and evaluate electrically conductive titanium oxide as a transparent conducting layer on which more efficient and more stable superstrate cells can be deposited. About one-third of the current project resources are allocated to each of these three objectives.

  3. Photostability Assessment in Amorphous-Silicon Solar Cells; Determinacion de la Fotoestabilidad en Celulas Solares de Silicio Amorfo

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M. [Ciemat, Madrid (Spain)

    2000-07-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled-photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characteristics in well established conditions. This method is suitable for a kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs.

  4. Irreversible lithium storage during lithiation of amorphous silicon thin film electrodes studied by in-situ neutron reflectometry

    Science.gov (United States)

    Jerliu, Bujar; Hüger, Erwin; Horisberger, Michael; Stahn, Jochen; Schmidt, Harald

    2017-08-01

    Amorphous silicon is a promising high-capacity anode material for application in lithium-ion batteries. However, a huge drawback of the material is that the large capacity losses taking place during cycling lead to an unstable performance. In this study we investigate the capacity losses occurring during galvanostatic lithiation of amorphous silicon thin film electrodes by in-situ neutron reflectometry experiments for the first ten cycles. As determined from the analysis of the neutron scattering length density and of the film thickness, the capacity losses are due to irreversible storage of lithium in the electrode. The amount of stored lithium increases during cycling to 20% of the maximum theoretical capacity after the 10th cycle. Possible explanations are discussed.

  5. Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure.

    Science.gov (United States)

    Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

    2016-06-01

    Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper "Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure" (Kichou et al., 2016) [1].

  6. Growth and Physical Structure of Amorphous Boron Carbide Deposited by Magnetron Sputtering on a Silicon Substrate with a Titanium Interlayer

    Directory of Open Access Journals (Sweden)

    Roberto Caniello

    2013-01-01

    Full Text Available Multilayer amorphous boron carbide coatings were produced by radiofrequency magnetron sputtering on silicon substrates. To improve the adhesion, titanium interlayers with different thickness were interposed between the substrate and the coating. Above three hundreds nanometer, the enhanced roughness of the titanium led to the growth of an amorphous boron carbide with a dense and continuing columnar structure, and no delamination effect was observed. Correspondingly, the adhesion of the coating became three time stronger than in the case of a bare silicon substrate. Physical structure and microstructural proprieties of the coatings were investigated by means of a scan electron microscopy, atomic force microscopy and X-ray diffraction. The adhesion of the films was measured by a scratch tester.

  7. Thin-film amorphous silicon alloy research partnership, Phase I. Annual technical progress report, February 2, 1995--February 1, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S. [United Solar Systems Corp., Troy, MI (United States)

    1996-04-01

    The principal objective of this R&D program is to expand, enhance and accelerate knowledge and capabilities for the development of high-performance, two-terminal multifunction amorphous silicon (a-Si) alloy modules. The near-term goal of the program is to achieve 12% stable module efficiency by 1998 using the multifunction approach. This report describes research on back reflectors of Ag/TiO{sub 2}/ZnO.

  8. Very high frequency plasma deposited amorphous/nanocrystalline silicon tandem solar cells on flexible substrates

    Science.gov (United States)

    Liu, Y.

    2010-02-01

    The work in this thesis is to develop high quality intrinsic layers (especially nc-Si:H) for micromorph silicon tandem solar cells/modules on plastic substrates following the substrate transfer method or knows as the Helianthos procedure. Two objectives are covered in this thesis: (1) preliminary work on trial and optimization of single junction and tandem cells on glass substrate, (2) silicon film depositions on Al foil, and afterwards the characterization and development of these cells/modules on a plastic substrate. The first objective includes the development of suitable ZnO:Al TCO for nc Si:H single junction solar cells, fabrication of the aimed micromorph tandem solar cells on glass, and finally the optimization of the nc-Si:H i-layer for the depositions afterwards on Al foil. Chapter 3 addresses the improvement of texture etching of ZnO:Al by studying the HCl etching effect on ZnO:Al films sputter-deposited in a set substrate heater temperature series. With the texture-etched ZnO:Al front TCO, a single junction nc-Si:H solar cell was deposited with an initial efficiency of 8.33%. Chapter 4 starts with studying the light soaking and annealing effects on micromorph tandem solar cell. In the end, a highly stabilized bottom cell current limited tandem cell was made. The tandem shows an initial efficiency of 10.2%, and degraded only 6.9% after 1600 h of light soaking. In Chapter 5, the nc-Si:H i-layers were studied in 3 pressure and inter-electrode distance series. The correlations between plasma physics and the consequent i-layers’ properties are investigated. We show that the Raman crystalline ratio and porosity of the nc-Si:H layer have an interesting relation with the p•d product. By varying p and d, device quality nc-Si:H layer can be deposited at a high rate of 0.6 nm/s. These results in fact are a very important step for the second objective. The second objective is covered by the entire Chapter 6. All silicon layers are deposited on special aluminum

  9. Synthesis of Bioactive Three-dimensional Silicon-oxide Nanofibrous Structures on the Silicon Substrate for Bionic Devices’ Fabrication

    Directory of Open Access Journals (Sweden)

    Candace Colpitts

    2016-02-01

    Full Text Available Bionic devices are implants that replace biological functions that have been lost due to damaged or lost tissue. The challenge of this area is to find the appropriate materials to match the biocompatible criteria with the same mechanical and electrical performance. In this research, a new method is introduced for the enhance‐ ment of silicon biocompatibility by fabrication of a 3D nanofibrous layer on the silicon surface, induced by nanosecond laser pulses at a high repetition rate and power. It was found that the laser treatment with small‐ er line spacing and a higher overlap number enhanced the biocompatibility of silicon. The results display a promis‐ ing improvement in the biocompatibility of silicon for the production of biomedical devices such as sensors, bio- MEMS and nano-biomaterial fabrications.

  10. Fabrication of porous silicon based tunable distributed Bragg reflectors by anodic etching of irradiated silicon

    Energy Technology Data Exchange (ETDEWEB)

    Vendamani, V.S. [School of Physics, University of Hyderabad, Hyderabad 500046 (India); Department of Physics, Pondicherry University, Puducherry 605014 (India); Dang, Z.Y. [Department of Physics, Centre for Ion Beam Applications (CIBA), National University of Singapore, Singapore 117542 (Singapore); Ramana, P.; Pathak, A.P. [School of Physics, University of Hyderabad, Hyderabad 500046 (India); Ravi Kanth Kumar, V.V. [Department of Physics, Pondicherry University, Puducherry 605014 (India); Breese, M.B.H. [Department of Physics, Centre for Ion Beam Applications (CIBA), National University of Singapore, Singapore 117542 (Singapore); Nageswara Rao, S.V.S., E-mail: svnsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Hyderabad 500046 (India)

    2015-09-01

    Highlights: • Fabrication of tunable distributed Bragg reflectors (DBRs) by gamma/ion irradiation of Si and subsequent formation of porous silicon multilayers has been described. • The central wavelength and the width of the stop band are found to decrease with increase in irradiation fluence. • The Si samples irradiated with highest fluence of 2 × 10{sup 13} ions/cm{sup 2} (100 MeV Ag ions) and 60 kGy (gamma) showed a central reflection at λ = 476 nm and 544 nm respectively, in contrast to un-irradiated sample, where λ = 635 nm. • The observed changes in the central wavelengths are attributed to the density of defects generated by gamma and ion irradiation in c-Si. • This study is expected to provide useful information for fabricating tunable wave reflectors for optical communication and other device applications. - Abstract: We report a study on the fabrication of tunable distributed Bragg reflectors (DBRs) by gamma/ion irradiation of Si and subsequent formation of porous silicon multilayers. Porous Si multilayers with 50 bilayers were designed to achieve high intensity of reflection. The reflection spectra appear to have a broad continuous band between 400 and 800 nm with a distinct central wavelength corresponding to different wave reflectors. The central wavelength and the width of the stop band are found to decrease with increase in irradiation fluence. The Si samples irradiated with highest fluence of 2 × 10{sup 13} ions/cm{sup 2} (100 MeV Ag ions) and 60 kGy (gamma) showed a central reflection at λ = 476 nm and 544 nm respectively, in contrast to un-irradiated sample, where λ = 635 nm. The observed changes are attributed to the density of defects generated by gamma and ion irradiation in c-Si. These results suggest that the gamma irradiation is a convenient and alternative method to tune the central wavelength of reflection without creating high density of defects by high energy ion implantation. This study is expected to provide useful

  11. Low-Cost, Silicon Carbide Replication Technique for LWIR Mirror Fabrication Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG proposes an innovative optical manufacturing approach that will enable the low-cost fabrication of lightweighted, Long Wave Infrared (LWIR) Silicon Carbide (SiC)...

  12. Effective interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using ultraviolet laser photocarrier radiometry

    Science.gov (United States)

    Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.

    2013-12-01

    Ultraviolet photocarrier radiometry (UV-PCR) was used for the characterization of thin-film (nanolayer) intrinsic hydrogenated amorphous silicon (i-a-Si:H) on c-Si. The small absorption depth (approximately 10 nm at 355 nm laser excitation) leads to strong influence of the nanolayer parameters on the propagation and recombination of the photocarrier density wave (CDW) within the layer and the substrate. A theoretical PCR model including the presence of effective interface carrier traps was developed and used to evaluate the transport parameters of the substrate c-Si as well as those of the i-a-Si:H nanolayer. Unlike conventional optoelectronic characterization methods such as photoconductance, photovoltage, and photoluminescence, UV-PCR can be applied to more complete quantitative characterization of a-Si:H/c-Si heterojunction solar cells, including transport properties and defect structures. The quantitative results elucidate the strong effect of a front-surface passivating nanolayer on the transport properties of the entire structure as the result of effective a-Si:H/c-Si interface trap neutralization through occupation. A further dramatic improvement of those properties with the addition of a back-surface passivating nanolayer is observed and interpreted as the result of the interaction of the increased excess bulk CDW with, and more complete occupation and neutralization of, effective front interface traps.

  13. Light trapping in amorphous silicon solar cells with periodic grating structures

    Energy Technology Data Exchange (ETDEWEB)

    Lia, Haihua; Wang, Qingkang; Chen, Jian [National Key Laboratory of Micro /Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240 (China); Krc, J. [University of Ljubljana, Faculty of Electrical Engineering, Trzaska25, 1000 Ljubljana (Slovenia); Soppe, W.J. [Energy research Center of the Netherlands ECN, P. O. Box 1, 1755 ZG Pettern (Netherlands)

    2012-03-15

    We report on the design of amorphous silicon solar cells with the periodic grating structures. It is a combination of an anti-reflection structure and the metallic reflection grating. Optical coupling and light trapping in thin-film solar cells are studied numerically using the Rigorous Coupled Wave Analysis enhanced by the Modal Transmission Line theory. The impact of the structure parameters of the gratings is investigated. The results revealed that within the incident angles of - 40{sup 0} to + 40{sup 0} the reflectivity of the cell with a period of 0.5 {mu}m, a filling factor of 0.1 and a groove depth of 0.4 {mu}m is 4%-22.7% in the wavelength range of 0.3-0.6 {mu}m and 1%-20.8% in the wavelength range of 0.6-0.84 {mu}m, the absorption enhancement of the a-Si layer is 0.4%-10.8% and 20%-385%, respectively.

  14. Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

    Science.gov (United States)

    Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

    2017-06-01

    N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

  15. Synchrotron radiation photoemission study of metal overlayers on hydrogenated amorphous silicon at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Pi, J.

    1990-09-21

    In this dissertation, metals deposited on a hydrogenated amorphous silicon (a-Si:H) film at room temperature are studied. The purpose of this work is mainly understanding the electronic properties of the interface, using high-resolution synchrotron radiation photoemission techniques as a probe. Atomic hydrogen plays an important role in passivating dangling bonds of a-Si:H films, thus reducing the gap-state distribution. In addition, singly bonded hydrogen also reduces states at the top of the valence band which are now replaced by deeper Si-H bonding states. The interface is formed by evaporating metal on an a-Si:H film in successive accumulations at room temperature. Au, Ag, and Cr were chosen as the deposited metals. Undoped films were used as substrates. Since some unique features can be found in a-Si:H, such as surface enrichment of hydrogen diffused from the bulk and instability of the free surface, we do not expect the metals/a-Si:H interface to behave exactly as its crystalline counterpart. Metal deposits, at low coverages, are found to gather preferentially around regions deficient in hydrogen. As the thickness is increased, some Si atoms in those regions are likely to leave their sites to intermix with metal overlayers like Au and Cr. 129 refs., 30 figs.

  16. Field collapse due to band-tail charge in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States); Schiff, E.A. [Syracuse Univ., NY (United States)

    1996-05-01

    It is common for the fill factor to decrease with increasing illumination intensity in hydrogenated amorphous silicon solar cells. This is especially critical for thicker solar cells, because the decrease is more severe than in thinner cells. Usually, the fill factor under uniformly absorbed red light changes much more than under strongly absorbed blue light. The cause of this is usually assumed to arise from space charge trapped in deep defect states. The authors model this behavior of solar cells using the Analysis of Microelectronic and Photonic Structures (AMPS) simulation program. The simulation shows that the decrease in fill factor is caused by photogenerated space charge trapped in the band-tail states rather than in defects. This charge screens the applied field, reducing the internal field. Owing to its lower drift mobility, the space charge due to holes exceeds that due to electrons and is the main cause of the field screening. The space charge in midgap states is small compared with that in the tails and can be ignored under normal solar-cell operating conditions. Experimentally, the authors measured the photocapacitance as a means to probe the collapsed field. They also explored the light intensity dependence of photocapacitance and explain the decrease of FF with the increasing light intensity.

  17. Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes

    Institute of Scientific and Technical Information of China (English)

    Yu Wei; Wang Xin-Zhan; Dai Wan-Lei; Lu Wan-Bing; Liu Yu-Mei; Fu Guang-Sheng

    2013-01-01

    Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC∶H) films,and the influences of Ag island films on the optical properties of the α-SiC∶H films are investigated.Atomic force microscope images show that Ag nanoislands are formed after Ag coating,and the size of the Ag islands increases with increasing Ag deposition time.The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained,and the resonance peak shifts toward longer wavelength with increasing Ag island size.The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands,and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min.Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands,and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light.

  18. Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    GUO Yu; ZHANG Xiwen; HAN Gaorong

    2007-01-01

    Hydrogenated amorphous silicon (a-Si:H) films were deposited on Si (100) and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition (DBD-CVD)in (SiH4+H2) atmosphere at room temperature.Results of the thickness measurement,SEM (scanning electron microscope),Raman,and FTIR (Fourier transform infrared spectroscopy) show that with the increase in the applied peak voltage,the deposition rate and network order of the films increase,and the hydrogen bonding configurations mainly in di-hydrogen (Si-H2) and poly hydrogen (SiH2)n are introduced into the films.The UV-visible transmission spectra show that with the decrease in Sill4/ (SiH4+H2) the thin films'band gap shifts from 1.92 eV to 2.17 eV.These experimental results are in agreement with the theoretic analysis of the DBD discharge.The deposition of a-Si:H films by the DBD-CVD method as reported here for the first time is attractive because it allows fast deposition of a-Si:H films on large-area low-melting-point substrates and requires only a low cost of production without additional heating or pumping equipment.

  19. 25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon.

    Science.gov (United States)

    Sirringhaus, Henning

    2014-03-05

    Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3-4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm(2) V(-1) s(-1) have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future.

  20. Morphological and Chemical Analysis Of Degraded Single Junction Amorphous Silicon Module.

    Science.gov (United States)

    Osayemwenre, Gilbert; Meyer, Edson; Mamphweli, Sampson

    2017-01-01

    Photovoltaic solar modules have different defects and degradation characteristic modes. These defects/degradation modes normally heats up some regions in the PV module, depending on the degree and size of the localised heat or hot spot, the localized heat can rise above the temperature limit of the module thereby cause damage to the structural orientation. The presence of severe defect and degradation correlates with high temperature gradients that usually results in morphological damage especially under outdoor conditions. The present study investigates the effect of defect/degradation on the surface morphology of the single junction amorphous silicon modules (a-Si:H) during outdoor deployment. The observed structural damage was analysed using scanning electron microscope (SEM) and energy dispersion X-ray (EDX) to ascertain the elemental composition. Results show huge discrepancies in the chemical composition constitute alone different regions. The presence of high concentration of carbon and oxygen was found in the affected region. The authors sincerely thank GMDRC University of Fort Hare for financial support. The authors also wish to thank Eskom for financing this project.

  1. Low-level boron doping and light-induced effects in amorphous silicon pin solar cells

    Science.gov (United States)

    Moeller, M.; Rauscher, B.; Kruehler, W.; Plaettner, R.; Pfleiderer, H.

    Amorphous silicon solar cells with the structure pin/ITO produced in the laboratory show an AM1 efficiency of up to 7.4 percent on 6 sq mm. The impact of doping the i-layer slightly with boron on the cell performance was studied together with its possible influence on the cell stability. Cells exposed to continuous AM1 illumination (up to 2000 hours) show a degradation of the efficiency. Differences in the bias-voltage during the deposition lead to significant differences in the stability whereas the influence of boron doping was not so prominent. The nu-tau-products for electrons and holes were shown to degrade differently through light-soaking for different doping-level. A further investigation was made by evaluating the frequency dependence of the capacitance via a new p i n junction model to obtain the density of states and the drift field in the i-layer for doping and light-soaking.

  2. Electric properties of undoped hydrogenated amorphous silicon semiconductors irradiated with self-ions

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp [Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sai, Hitoshi [National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Imaizumi, Mitsuru; Shimazaki, Kazunori [Japan Aerospace Exploration Agency (JAXA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan); Kondo, Michio [National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2012-08-15

    This paper reports dark conductivity (DC), photoconductivity (PC), and Seebeck coefficient variations of undoped hydrogenated amorphous silicon semiconductors irradiated with protons and Si ions. Both the DC and PC values show nonmonotonic variations with increasing a fluence in the case of proton irradiation, whereas the monotonic decreases are observed in the case of Si ion irradiation. From results of the Seebeck coefficient variation due to proton irradiation, it is shown that the increase in DC and PC in the low fluence regime is caused by donor-center generation. Also, it is shown by analyzing the proton energy dependence and the energy deposition process that the donor-center generation is based on the electronic excitation effect. On the other hand, the decrease in DC and PC in the high fluence regime is attributed to the carrier removal effect and the carrier lifetime decrease due to the accumulation of dangling bonds, respectively. The dangling bond generation due to ion irradiation is mainly caused by the displacement damage effect and therefore it is different from the generation process in the Staebler-Wronski effect.

  3. Anomalous enhancement in radiation induced conductivity of hydrogenated amorphous silicon semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp [Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sai, Hitoshi [National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Imaizumi, Mitsuru; Shimazaki, Kazunori [Japan Aerospace Exploration Agency (JAXA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan); Kondo, Michio [National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2012-09-01

    Electric conductivity variations of undoped hydrogenated amorphous silicon (a-Si:H) semiconductors induced by swift protons are investigated. The results show that the conductivity drastically increases at first and then decreases on further irradiation. The conductivity enhancement is observed only in the low fluence regime and lasts for a prolonged period of time when proton irradiation stops in this fluence regime. On the other hand, the photosensitivity has a minimum value around the conductivity peak. This fact indicates that non-equilibrium carriers do not play a dominant role in the electric conduction in this fluence regime. It is found that the anomalous conductivity enhancement in the low fluence regime is dominated by donor center generation. At higher fluences the conductivity during irradiation is dominated by non-equilibrium carriers as the generated donor centers disappear. It is also found that the RIC in the high fluence regime is proportional to the carrier generation rate. This indicates that the recombination process of non-equilibrium carriers is dominated by indirect recombination via defect levels.

  4. Image quality vs. radiation dose for a flat-panel amorphous silicon detector: a phantom study.

    Science.gov (United States)

    Geijer, H; Beckman, K W; Andersson, T; Persliden, J

    2001-01-01

    The aim of this study was to investigate the image quality for a flat-panel amorphous silicon detector at various radiation dose settings and to compare the results with storage phosphor plates and a screen-film system. A CDRAD 2.0 contrast-detail phantom was imaged with a flat-panel detector (Philips Medical Systems, Eindhoven, The Netherlands) at three different dose levels with settings for intravenous urography. The same phantom was imaged with storage phosphor plates at a simulated system speed of 200 and a screen-film system with a system speed of 160. Entrance surface doses were recorded for all images. At each setting, three images were read by four independent observers. The flat-panel detector had equal image quality at less than half the radiation dose compared with storage phosphor plates. The difference was even larger when compared with film with the flat-panel detector having equal image quality at approximately one-fifth the dose. The flat-panel detector has a very favourable combination of image quality vs radiation dose compared with storage phosphor plates and screen film.

  5. Image quality vs radiation dose for a flat-panel amorphous silicon detector: a phantom study

    Energy Technology Data Exchange (ETDEWEB)

    Geijer, H.; Andersson, T. [Dept. of Radiology, Oerebro Medical Centre Hospital (Sweden); Beckman, K.W.; Persliden, J. [Dept. of Medical Physics, Oerebro Medical Centre Hospital (Sweden)

    2001-09-01

    The aim of this study was to investigate the image quality for a flat-panel amorphous silicon detector at various radiation dose settings and to compare the results with storage phosphor plates and a screen-film system. A CDRAD 2.0 contrast-detail phantom was imaged with a flat-panel detector (Philips Medical Systems, Eindhoven, The Netherlands) at three different dose levels with settings for intravenous urography. The same phantom was imaged with storage phosphor plates at a simulated system speed of 200 and a screen-film system with a system speed of 160. Entrance surface doses were recorded for all images. At each setting, three images were read by four independent observers. The flat-panel detector had equal image quality at less than half the radiation dose compared with storage phosphor plates. The difference was even larger when compared with film with the flat-panel detector having equal image quality at approximately one-fifth the dose. The flat-panel detector has a very favourable combination of image quality vs radiation dose compared with storage phosphor plates and screen film. (orig.)

  6. In vivo Characterization of Amorphous Silicon Carbide As a Biomaterial for Chronic Neural Interfaces.

    Science.gov (United States)

    Knaack, Gretchen L; McHail, Daniel G; Borda, German; Koo, Beomseo; Peixoto, Nathalia; Cogan, Stuart F; Dumas, Theodore C; Pancrazio, Joseph J

    2016-01-01

    Implantable microelectrode arrays (MEAs) offer clinical promise for prosthetic devices by enabling restoration of communication and control of artificial limbs. While proof-of-concept recordings from MEAs have been promising, work in animal models demonstrates that the obtained signals degrade over time. Both material robustness and tissue response are acknowledged to have a role in device lifetime. Amorphous Silicon carbide (a-SiC), a robust material that is corrosion resistant, has emerged as an alternative encapsulation layer for implantable devices. We systematically examined the impact of a-SiC coating on Si probes by immunohistochemical characterization of key markers implicated in tissue-device response. After implantation, we performed device capture immunohistochemical labeling of neurons, astrocytes, and activated microglia/macrophages after 4 and 8 weeks of implantation. Neuron loss and microglia activation were similar between Si and a-SiC coated probes, while tissue implanted with a-SiC displayed a reduction in astrocytes adjacent to the probe. These results suggest that a-SiC has a similar biocompatibility profile as Si, and may be suitable for implantable MEA applications as a hermetic coating to prevent material degradation.

  7. Pulsed laser deposition of silicon dioxide thin films with silicone targets for fabricating waveguide devices

    Science.gov (United States)

    Okoshi, Masayuki; Kuramatsu, Masaaki; Inoue, Narumi

    2002-06-01

    Silicon dioxide (SiO2) thin films were deposited at room temperature by 193-nm ArF excimer laser ablation of silicone in oxygen atmosphere. Only the side chains of the target were photo-dissociated during ablation to deposit Si-O bonds on a substrate in high laser fluence at about 10 J/cm2. Oxygen gas worked to oxidize the Si-O bonds ejected from the target to from SiO2 thin films at the gas pressure of 4.4 X 10-2 Torr, in addition to reducing the isolated carbon mixed into the films. We also found that the deposited rate could control refractive index of the films. The refractive index of the film deposited at 0.05 nm/pulse is greater than that of the film at 0.1 nm/pulse. Thus, a 0.2-micrometers thick SiO2 cladding film deposited at 0.1 nm/pulse was firstly formed on the whole surface of a 100- micrometers -thick polyester film, and then a 0.6 micrometers -thick SiO2 core film at 0.05 nm/pulse was fabricated in a line on the sample. The sample functioned as a waveguide device for a 633-nm line of He-Ne laser.

  8. Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

    2010-01-01

    A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

  9. Optimization, analysis, and fabrication of silicon-germanium heterojunction bipolar transistors

    Science.gov (United States)

    Kwok, Kai Hay

    This thesis deals with the optimization, analysis, and fabrication of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). Two vertical base profile optimization studies for improving the high-frequency performance of SiGe HBTs are presented. In the first study, the Ge profile is optimized for the minimum contribution of the emitter and base delay times to the transition frequency in the low-injection regime. A fixed Ge dose is used as the optimization constraint. Non-quasi-static effects at high frequencies are taken into account. It is shown that the graded Ge profile is more effective than the box Ge profile in minimizing the two delay time contributors for SiGe HBTs with today's typical emitter and base dimensions. In the second optimization study, the base doping and Ge profiles are optimized for minimum base delay time in low- and high-injection regimes before the onset of Kirk effect. Fixed Ge dose, intrinsic base resistance, and base concentration near the emitter are adopted as optimization constraints. The effect of plasma-induced bandgap narrowing in high injection is considered. An iteration scheme for calculating the base delay time for a wide range of collector current densities is developed. It is shown that the retrograde base doping profile with graded Ge profiles gives the minimum base delay time in both low- and high-injection regimes. An analysis of the retrograde portion of a base retrograde doping profile in a SiGe HBT is also performed. A closed-form analytical expression of the base delay time is derived with various physical effects taken into consideration. The relative importance of the physical effects is assessed. It is found that the adverse effect of the retrograde portion of the base retrograde doping profile on the base delay time is less pronounced than expected, especially when a high Ge grading exists across the base. It is also shown that the effect of the field dependency of the electron diffusivity needs to be

  10. Fabrication Method for LOBSTER-Eye Optics in Silicon

    Science.gov (United States)

    Chervenak, James; Collier, Michael; Mateo, Jennette

    2013-01-01

    Soft x-ray optics can use narrow slots to direct x-rays into a desirable pattern on a focal plane. While square-pack, square-pore, slumped optics exist for this purpose, they are costly. Silicon (Si) is being examined as a possible low-cost replacement. A fabrication method was developed for narrow slots in Si demonstrating the feasibility of stacked slot optics to replace micropores. Current micropore optics exist that have 20-micron-square pores on 26-micron pitch in glass with a depth of 1 mm and an extent of several square centimeters. Among several proposals to emulate the square pore optics are stacked slot chips with etched vertical slots. When the slots in the stack are positioned orthogonally to each other, the component will approach the soft x-ray focusing observed in the micropore optics. A specific improvement Si provides is that it can have narrower sidewalls between slots to permit greater throughput of x-rays through the optics. In general, Si can have more variation in slot geometry (width, length). Further, the sidewalls can be coated with high-Z materials to enhance reflection and potentially reduce the surface roughness of the reflecting surface. Narrow, close-packed deep slots in Si have been produced using potassium hydroxide (KOH) etching and a patterned silicon nitride (SiN) mask. The achieved slot geometries have sufficient wall smoothness, as observed through scanning electron microscope (SEM) imaging, to enable evaluation of these slot plates as an optical element for soft x-rays. Etches of different angles to the crystal plane of Si were evaluated to identify a specific range of etch angles that will enable low undercut slots in the Si material. These slots with the narrow sidewalls are demonstrated to several hundred microns in depth, and a technical path to 500-micron deep slots in a precision geometry of narrow, closepacked slots is feasible. Although intrinsic stress in ultrathin wall Si is observed, slots with walls approaching 1

  11. Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips

    NARCIS (Netherlands)

    Vermeer, Rolf; Berenschot, Erwin; Sarajlic, Edin; Tas, Niels; Jansen, Henri

    2014-01-01

    In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using (111) silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom surface enclosed by th

  12. Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

    OpenAIRE

    Roca i Cabarrocas, Pere; Cariou, Romain; Labrune, Martin

    2012-01-01

    International audience; We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of silicon nanocrystals and point toward silicon nanocrystals being the most p...

  13. Band engineering of amorphous silicon ruthenium thin film and its near-infrared absorption enhancement combined with nano-holes pattern on back surface of silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Anran; Zhong, Hao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Wei, E-mail: wli@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gu, Deen; Jiang, Xiangdong [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2016-10-30

    Highlights: • The increase of Ru concentration leads to a narrower bandgap of a-Si{sub 1-x}Ru{sub x} thin film. • The absorption coefficient of a-Si{sub 1-x}Ru{sub x} is higher than that of SiGe. • A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} film and Si nano-holes layer is achieved. - Abstract: Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its bandgap limit. In this study, a narrow bandgap silicon rich semiconductor is achieved by introducing ruthenium (Ru) into amorphous silicon (a-Si) to form amorphous silicon ruthenium (a-Si{sub 1-x}Ru{sub x}) thin films through co-sputtering. The increase of Ru concentration leads to an enhancement of light absorption and a narrower bandgap. Meanwhile, a specific light trapping technique is employed to realize high absorption of a-Si{sub 1-x}Ru{sub x} thin film in a finite thickness to avoid unnecessary carrier recombination. A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} thin film and silicon random nano-holes layer is formed on the back surface of silicon substrates, and significantly improves near-infrared absorption while the leaky light intensity is less than 5%. This novel absorber, combining narrow bandgap thin film with light trapping structure, may have a potential application in near-infrared photoelectronic devices.

  14. Classical molecular dynamics and quantum abs-initio studies on lithium-intercalation in interconnected hollow spherical nano-spheres of amorphous Silicon

    DEFF Research Database (Denmark)

    Bhowmik, Arghya; Malik, R.; Prakash, S.;

    2016-01-01

    interconnected hollow nano-spheres of amorphous silicon have been found to exhibit high cyclability. The absence of fracture upon lithiation and the high cyclability has been attributed to reduction in intercalation stress due to hollow spherical geometry of the silicon nano-particles. The present work argues...

  15. Metamaterials with tunable refractive index fabricated from amorphous ferromagnetic microwires and optical Magnus effect

    Science.gov (United States)

    Ivanov, Andrey; Vedyayev, Anatoly; Galkin, Vladimir; Shalygin, Alexander; Ivanov, Valery

    2009-03-01

    For homogeneous NPVM (negative phase--velocity mediums) [V. G. Veselago, Soviet Physics - Uspekhi 10 (1968) 509; T. G. Mackay, A. Lakhtakia, Phys. Rev. E 69 (2004) 026602] anomalous effects such as negative refraction, light pressure, Doppler shift, Cherenkov-Vavilov radiation, Goos-Hanchen effect have been discovered in different frequency ranges. In this presentation the optical circular polarized effect is calculated for inhomogeneous mediums (optical Magnus effect) and it is shown that it is anomalous in NPVM with respect to ``right-handed'' materials. The proposed metamaterials fabricated from glass coated amorphous ferromagnetic Co-Fe-Cr-B-Si microwires are shown to exhibit a negative refractive index for electromagnetic waves over scale of GHz frequencies [A.V. Ivanov, A.N. Shalygin, A.V. Vedyayev, V.A. Ivanov, JETP Letters 85 (2007) 565]. The magnetostatic interaction between microwires has been taken into account. The phase and group velocities in proposed metamaterial have been calculated. The ratio of thereof depends monotonically on the size of the microwires. Optical properties of such metamaterials are tunable by an external magnetic field and mechanical stress.

  16. Electrochemical Impedance Spectroscopy study in micro-grain structured amorphous silicon anodes for lithium-ion batteries

    Science.gov (United States)

    Paloukis, Fotis; Elmasides, Costas; Farmakis, Filippos; Selinis, Petros; Neophytides, Stylianos G.; Georgoulas, Nikolaos

    2016-11-01

    In this paper, a study of the lithiation mechanism of micro-grain structured silicon anode is presented. Micro-grain amorphous silicon was deposited on special copper foil and it is shown that after several decades of galvanostatic cycles, it preserves its granular nature with minor degradation. In order to shed light on the lithiation mechanisms of the micro-grain silicon, Electrochemical Impedance Spectroscopy (EIS) was conducted on silicon half-cells at various State-of-Charge (SoC) and various discharging current values and the Solid-Electrolyte Interphase (SEI) RSEI and polarization resistance Rpol were determined. Results reveal that Rpol highly increases for cell voltages lower than 0.2 V and it strongly depends on the discharging C-rate. From X-ray Photoelectron Spectroscopy (XPS) measurements combined with surface sputtering, the existence of a LixSiyOz interlayer between SEI and silicon is confirmed, which is believed to play an important role to the lithium kinetics. Finally, combining our results, a lithiation mechanism of the micro-grain silicon anode is proposed.

  17. Self-assembled peptide nanotubes as an etching material for the rapid fabrication of silicon wires

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget; Andersen, Karsten Brandt; Svendsen, Winnie Edith

    2011-01-01

    This study has evaluated self-assembled peptide nanotubes (PNTS) and nanowires (PNWS) as etching mask materials for the rapid and low-cost fabrication of silicon wires using reactive ion etching (RIE). The self-assembled peptide structures were fabricated under mild conditions and positioned on c...

  18. Fabrication of a 100% fill-factor silicon microlens array

    Institute of Scientific and Technical Information of China (English)

    Yan Jianhua; Ou Wen; Ou Yi

    2012-01-01

    A simple method has been developed for the fabrication of a silicon microlens array with a 100% fill factor and a smooth configuration.The microlens array is fabricated by using the processes of photoresist (SU8-2005) spin coating,thermal reflow,thermal treatment and reactive ion etching (RIE).First,a photoresist microlens array on a single-polished silicon substrate is fabricated by both thermal reflow and thermal treatment technologies.A typical microlens has a square bottom with size of 25 μm,and the distance between every two adjacent microlenses is 5 μm.Secondly,the photoresist microlens array is transferred to the silicon substrate by RIE to fabricate the silicon microlens array.Experimental results reveal that the silicon microlens array could be formed by adjusting the quantities of the reactive ion gases of SF6 and O2 to proper values.In this paper,the quantities of SF6 and 02 are 60 sccm and 50 sccm,respectively,the corresponding etch ratio of the photoresist and the silicon substrate is 1 to1.44.The bottom size and height of a typical silicon microlens are 30.1μm and 3μm,respectively.The focal lengths of the microlenses ranged from 15.4 to 16.6μm.

  19. Application of metal nanowire networks on hydrogenated amorphous silicon thin film solar cells

    Science.gov (United States)

    Xie, Shouyi; Hou, Guofu; Chen, Peizhuan; Jia, Baohua; Gu, Min

    2017-02-01

    We demonstrate the application of metal nanowire (NW) networks as a transparent electrode on hydrogenated amorphous Si (a-Si:H) solar cells. We first systematically investigate the optical performances of the metal NW networks on a-Si:H solar cells in different electrode configurations through numerical simulations to fully understand the mechanisms to guide the experiments. The theoretically optimized configuration is discovered to be metal NWs sandwiched between a 40 nm indium tin oxide (ITO) layer and a 20 nm ITO layer. The overall performances of the solar cells integrated with the metal NW networks are experimentally studied. It has been found the experimentally best performing NW integrated solar cell deviates from the theoretically predicated design due to the performance degradation induced by the fabrication complicity. A 6.7% efficiency enhancement was achieved for the solar cell with metal NW network integrated on top of a 60 nm thick ITO layer compared to the cell with only the ITO layer due to enhanced electrical conductivity by the metal NW network.

  20. Application of metal nanowire networks on hydrogenated amorphous silicon thin film solar cells.

    Science.gov (United States)

    Xie, Shouyi; Hou, Guofu; Chen, Peizhuan; Jia, Baohua; Gu, Min

    2017-02-24

    We demonstrate the application of metal nanowire (NW) networks as a transparent electrode on hydrogenated amorphous Si (a-Si:H) solar cells. We first systematically investigate the optical performances of the metal NW networks on a-Si:H solar cells in different electrode configurations through numerical simulations to fully understand the mechanisms to guide the experiments. The theoretically optimized configuration is discovered to be metal NWs sandwiched between a 40 nm indium tin oxide (ITO) layer and a 20 nm ITO layer. The overall performances of the solar cells integrated with the metal NW networks are experimentally studied. It has been found the experimentally best performing NW integrated solar cell deviates from the theoretically predicated design due to the performance degradation induced by the fabrication complicity. A 6.7% efficiency enhancement was achieved for the solar cell with metal NW network integrated on top of a 60 nm thick ITO layer compared to the cell with only the ITO layer due to enhanced electrical conductivity by the metal NW network.

  1. Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process

    KAUST Repository

    Ghoneim, Mohamed T.

    2013-11-20

    We report the inherent increase in capacitance per unit planar area of state-of-the art high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process. We methodically study and show that our approach to transform bulk silicon (100) into a flexible fabric adds an inherent advantage of enabling higher integration density dynamic random access memory (DRAM) on the same chip area. Our approach is to release an ultra-thin silicon (100) fabric (25 μm thick) from the bulk silicon wafer, then build MIMCAPs using sputtered aluminium electrodes and successive atomic layer depositions (ALD) without break-ing the vacuum of a high-κ aluminium oxide sandwiched between two tantalum nitride layers. This result shows that we can obtain flexible electronics on silicon without sacrificing the high density integration aspects and also utilize the non-planar geometry associated with fabrication process to obtain a higher integration density compared to bulk silicon integration due to an increased normalized capacitance per unit planar area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

    Energy Technology Data Exchange (ETDEWEB)

    Kyoung Ryu, Yu; Garcia, Ricardo, E-mail: r.garcia@csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Aitor Postigo, Pablo; Garcia, Fernando [Instituto de Microelectrónica de Madrid (IMM-CNM-CSIC), 28760 Tres Cantos, Madrid (Spain)

    2014-06-02

    Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained with a top-down lithography method.

  3. Fabrication of High-Temperature-Stable Thermoelectric Generator Modules Based on Nanocrystalline Silicon

    Science.gov (United States)

    Kessler, V.; Dehnen, M.; Chavez, R.; Engenhorst, M.; Stoetzel, J.; Petermann, N.; Hesse, K.; Huelser, T.; Spree, M.; Stiewe, C.; Ziolkowski, P.; Schierning, G.; Schmechel, R.

    2014-05-01

    High-temperature-stable thermoelectric generator modules (TGMs) based on nanocrystalline silicon have been fabricated, characterized by the Harman technique, and measured in a generator test facility at the German Aerospace Center. Starting with highly doped p- and n-type silicon nanoparticles from a scalable gas-phase process, nanocrystalline bulk silicon was obtained using a current-activated sintering technique. Electrochemical plating methods were employed to metalize the nanocrystalline silicon. The specific electrical contact resistance ρ c of the semiconductor-metal interface was characterized by a transfer length method. Values as low as ρ c cold-side temperature of 300°C.

  4. Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers

    OpenAIRE

    2012-01-01

    Microstructures of stacked silicon-nitride/amorphous-silicon/crystalline-silicon (SiN_x/a-Si/c-Si) layers prepared by catalytic chemical vapor deposition were investigated with scanning transmission electron microscopy to clarify the origin of the sensitive dependence of surface recombination velocities (SRVs) of the stacked structure on the thickness of the a-Si layer. Stacked structures with a-Si layers with thicknesses greater than 10 nm exhibit long effective carrier lifetimes, while thos...

  5. Quantification of absorption contributions in microstructured silicon fabricated by femtosecond laser pulses

    Science.gov (United States)

    Peng, Yan; Chen, XiangQian; Zhou, YunYan; Luo, Kun; Xu, Jian; Henderson, Ron; Dai, JianMing; Zhu, YiMing

    2015-06-01

    Microstructured silicon material, fabricated by femtosecond laser pulses, has a lot of crucial applications in silicon-based photovoltaics, photo-detectors, and super-hydrophobic devices etc., due mainly to the high absorption in both visible and infrared regions. However, the mechanisms attributed to its high-absorption characteristics have never been accurately quantified, which limits further the exploitation of this kind of material. Here, we experimentally quantify different absorption contributions in microstructured silicon fabricated by femtosecond laser pulses, which can be attributed to dopant impurities in the silicon substrate, doping impurities induced during the laser fabrication process, absorption enhancement from the light-trapping structure, and surface disordered material formed also during the laser fabrication process. From these analyses, we determine that with the assist of a light-trapping structure, dopant impurities in the silicon substrate contribute much more to the infrared absorption than those of the doping sulfur impurities induced during the fabrication process. Furthermore, the infrared absorption of material can be annealing-insensitive. These results have important implications for the design and fabrication of high-efficiency optoelectronic devices.

  6. Accelerated kinetics of amorphous silicon using an on-the-fly off-lattice kinetic Monte-Carlo method

    Science.gov (United States)

    Joly, Jean-Francois; El-Mellouhi, Fedwa; Beland, Laurent Karim; Mousseau, Normand

    2011-03-01

    The time evolution of a series of well relaxed amorphous silicon models was simulated using the kinetic Activation-RelaxationTechnique (kART), an on-the-fly off-lattice kinetic Monte Carlo method. This novel algorithm uses the ART nouveau algorithm to generate activated events and links them with local topologies. It was shown to work well for crystals with few defects but this is the first time it is used to study an amorphous material. A parallel implementation allows us to increase the speed of the event generation phase. After each KMC step, new searches are initiated for each new topology encountered. Well relaxed amorphous silicon models of 1000 atoms described by a modified version of the empirical Stillinger-Weber potential were used as a starting point for the simulations. Initial results show that the method is faster by orders of magnitude compared to conventional MD simulations up to temperatures of 500 K. Vacancy-type defects were also introduced in this system and their stability and lifetimes are calculated.

  7. Structural, electronic, and vibrational properties of high-density amorphous silicon: a first-principles molecular-dynamics study.

    Science.gov (United States)

    Morishita, Tetsuya

    2009-05-21

    We report a first-principles study of the structural, electronic, and dynamical properties of high-density amorphous (HDA) silicon, which was found to be formed by pressurizing low-density amorphous (LDA) silicon (a normal amorphous Si) [T. Morishita, Phys. Rev. Lett. 93, 055503 (2004); P. F. McMillan, M. Wilson, D. Daisenberger, and D. Machon, Nature Mater. 4, 680 (2005)]. Striking structural differences between HDA and LDA are revealed. The LDA structure holds a tetrahedral network, while the HDA structure contains a highly distorted tetrahedral network. The fifth neighboring atom in HDA tends to be located at an interstitial position of a distorted tetrahedron composed of the first four neighboring atoms. Consequently, the coordination number of HDA is calculated to be approximately 5 unlike that of LDA. The electronic density of state (EDOS) shows that HDA is metallic, which is consistent with a recent experimental measurement of the electronic resistance of HDA Si. We find from local EDOS that highly distorted tetrahedral configurations enhance the metallic nature of HDA. The vibrational density of state (VDOS) also reflects the structural differences between HDA and LDA. Some of the characteristic vibrational modes of LDA are dematerialized in HDA, indicating the degradation of covalent bonds. The overall profile of the VDOS for HDA is found to be an intermediate between that for LDA and liquid Si under pressure (high-density liquid Si).

  8. Photothermal performance of an amorphous silicon photovoltaic panel integrated in a membrane structure

    Science.gov (United States)

    Zhao, Bing; Hu, Jianhui; Chen, Wujun; Qiu, Zhenyu; Zhou, Jinyu; Qu, Yegao; Ge, Binbin

    2016-10-01

    The amorphous silicon photovoltaic (a-Si PV) cells are widely used for electricity generation from solar energy. When the a-Si PV cells are integrated into building roofs, such as ETFE (ethylene-tetrafouoroethylene) cushions, the temperature characteristics are indispensible for evaluating the thermal performances of a-Si PV and its constructions. This temperature value is directly dependent on the solar irradiance, wind velocity, ambient temperature and installation form. This paper concerns the field experiments and numerical modeling on the temperature characteristics and temperature value of the a-Si PV integrated in a double-layer ETFE cushion structure. To this end, an experimental model composed of two a-Si PV cells and a double-layer ETFE cushion was developed, and the corresponding experiments were carried out under two typical weather conditions (summer sunny and summer cloudy). The theoretical thermal model was developed based on an energy balance equation taking the short wave radiation, long wave radiation, convection and generated power into account. The measured solar irradiance and air temperature were used as real weather conditions for the thermal model. The corresponding differential equation of the a-Si PV temperature varying with the solar irradiance and air temperature was solved by a newly developed program based on the numerical method. The measured results show that the influence of solar irradiance on the temperature is much more significant than the other parameters, and the maximum temperature variation under sunny conditions is greater than that under cloudy conditions. The comparative study between the experimental and numerical results shows the correct predictions of the a-Si PV temperature under the sunny and cloudy conditions. The maximum difference is 3.9 °C with the acceptable reasons of the solar irradiance fluctuation and the PV thermal response time. These findings will provide useful observations and explanations for

  9. Multidetector-row CT with a 64-row amorphous silicon flat panel detector

    Science.gov (United States)

    Shapiro, Edward G.; Colbeth, Richard E.; Daley, Earl T.; Job, Isaias D.; Mollov, Ivan P.; Mollov, Todor I.; Pavkovich, John M.; Roos, Pieter G.; Star-Lack, Josh M.; Tognina, Carlo A.

    2007-03-01

    A unique 64-row flat panel (FP) detector has been developed for sub-second multidetector-row CT (MDCT). The intent was to explore the image quality achievable with relatively inexpensive amorphous silicon (a-Si) compared to existing diagnostic scanners with discrete crystalline diode detectors. The FP MDCT system is a bench-top design that consists of three FP modules. Each module uses a 30 cm x 3.3 cm a-Si array with 576 x 64 photodiodes. The photodiodes are 0.52 mm x 0.52 mm, which allows for about twice the spatial resolution of most commercial MDCT scanners. The modules are arranged in an overlapping geometry, which is sufficient to provide a full-fan 48 cm diameter scan. Scans were obtained with various detachable scintillators, e.g. ceramic Gd IIO IIS, particle-in-binder Gd IIO IIS:Tb and columnar CsI:Tl. Scan quality was evaluated with a Catphan-500 performance phantom and anthropomorphic phantoms. The FP MDCT scans demonstrate nearly equivalent performance scans to a commercial 16-slice MDCT scanner at comparable 10 - 20 mGy/100mAs doses. Thus far, a high contrast resolution of 15 lp/cm and a low contrast resolution of 5 mm @ 0.3 % have been achieved on 1 second scans. Sub-second scans have been achieved with partial rotations. Since the future direction of MDCT appears to be in acquiring single organ coverage per scan, future efforts are planned for increasing the number of detector rows beyond the current 64- rows.

  10. Intrinsic stress mitigation via elastic softening during two-step electrochemical lithiation of amorphous silicon

    Science.gov (United States)

    Jia, Zheng; Li, Teng

    2016-06-01

    Recent experiments and first-principles calculations show the two-step lithiation of amorphous silicon (a-Si). In the first step, the lithiation progresses by the movement of a sharp phase boundary between a pristine a-Si phase and an intermediate L iη Si phase until the a-Si phase is fully consumed. Then the second step sets in without a visible interface, with the L iη Si phase continuously lithiating to a L i3.75 Si phase. This unique feature of lithiation is believed to have important consequences for mechanical durability of a-Si anodes in lithium ion batteries, however the mechanistic understanding of such consequences is still elusive so far. Here, we reveal an intrinsic stress mitigation mechanism due to elastic softening during two-step lithiation of a-Si, via chemo-mechanical modeling. We find that lithiation-induced elastic softening of a-Si leads to effective stress mitigation in the second step of lithiation. These mechanistic findings allow for the first time to quantitatively predict the critical size of an a-Si anode below which the anode becomes immune to lithiation-induced fracture, which is in good agreement with experimental observations. Further studies on lithiation kinetics suggest that the two-step lithiation also results in a lower stress-induced energy barrier for lithiation. The present study reveals the physical underpinnings of previously unexplained favorable lithiation kinetics and fracture behavior of a-Si anodes, and thus sheds light on quantitative design guidelines toward high-performance anodes for lithium ion batteries.

  11. The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

    Science.gov (United States)

    Hanak, Joseph J.; Kaschmitter, Jim

    1991-01-01

    Ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) was identified as a potential low cost power source for small satellites. A survey was conducted of the status of the a-Si PV array technology with respect to present and future performance, availability, cost, and risks. For existing, experimental array blankets made of commercial cell material, utilizing metal foil substrates, the Beginning of Life (BOL) performance at Air Mass Zero (AM0) and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated End of Life (EOL) power output after 10 years in a nominal low earth orbit would be 80 pct. of BOL, the degradation being due to largely light induced effects (-10 to -15 pct.) and in part (-5 pct.) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing U.S. national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. Cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long range development program toward developing of this important power source for space.

  12. Hybrid electrolytes based on ionic liquids and amorphous porous silicon nanoparticles: Organization and electrochemical properties

    KAUST Repository

    Tchalala, Mohammed

    2017-05-06

    Ionic liquids (ILs) and ionic liquid-nanoparticle (IL-NP) hybrid electrolytes have garnered a lot of interest due to their unique properties that stimulate their use in various applications. Herein, we investigate the electrochemical and photo-physical properties of organic-inorganic hybrid electrolytes based on three imidazolium-based ionic liquids, i.e., 1-buthyl-3-methylimidazolium thiocyanate ([bmim] [SCN]), 1-ethyl-3-methylimidazolium tetrafluoroborate ([emim] [BF4]) and 1-buthyl-3-methylimidazolium acetate ([bmim] [Ac]) that are covalently tethered to amorphous porous silicon nanoparticles (ap-Si NPs). We found that the addition of ap-Si NPs confer to the ILs a pronounced boost in the electrocatalytic activity, and in mixtures of ap-Si NPs and [bmim] [SCN], the room-temperature current transport is enhanced by more than 5 times compared to bare [bmim] [SCN]. A detailed structural investigation by transmission electron microscope (TEM) showed that the ap-Si NPs were well dispersed, stabilized and highly aggregated in [bmim] [SCN], [emim] [BF4] and [bmim] [Ac] ILs, respectively. These observations correlate well with the enhanced current transport observed in ap-Si NPs/[bmim] [SCN] evidenced by electrochemical measurements. We interpreted these observations by the use of UV–vis absorbance, photoluminescence (PL), FTIR and solid-state NMR spectroscopy. We found that the ap-Si NPs/[bmim] [SCN] hybrid stands out due to its stability and optical transparency. This behavior is attributed to the iron(III) thiocyanate complexion as per the experimental findings. Furthermore, we found that the addition of NPs to [emim] [BF4] alters the equilibrium of the IL, which consequently improved the stability of the NPs through intermolecular interactions with the two ionic layers (anionic and cationic layers) of the IL. While in the case of [bmim] [Ac], the dispersion of ap-Si NPs was restrained because of the high viscosity of this IL.

  13. Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, Florian

    2010-02-05

    Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

  14. Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, Florian

    2010-02-05

    Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

  15. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  16. CMOS-compatible fabrication, micromachining, and bonding strategies for silicon photonics

    Science.gov (United States)

    Heck, John; Jones, Richard; Paniccia, Mario J.

    2011-02-01

    The adoption of optical technologies by high-volume consumer markets is severely limited by the cost and complexity of manufacturing complete optical transceiver systems. This is in large part because "boutique" semiconductor fabrication processes are required for III-V lasers, modulators, and photodetectors; furthermore, precision bonding and painstaking assembly are needed to integrate or assemble such dissimilar devices and materials together. On the other hand, 200mm and 300mm silicon process technology has been bringing ever-increasing computing power to the masses by relentless cost reduction for several decades. Intel's silicon photonics program aims to marry this CMOS infrastructure and recent developments in MEMS manufacturing with the burgeoning field of microphotonics to make low cost, high-speed optical links ubiquitous. In this paper, we will provide an overview of several aspects of silicon photonics technology development in a CMOS fabrication line. First, we will describe fabrication strategies from the MEMS industry for micromachining silicon to create passive optical devices such as mirrors, waveguides, and facets, as well as alignment features. Second, we will discuss some of the challenges of fabricating hybrid III-V lasers on silicon, including such aspects as hybrid integration of InP-based materials with silicon using various bonding methods, etching of InP films, and contact formation using CMOS-compatible metals.

  17. Silicon carbide high performance optics: a cost-effective, flexible fabrication process

    Science.gov (United States)

    Casstevens, John M.; Rashed, Abuagela; Plummer, Ronald; Bray, Don; Gates, Rob L.; Lara-Curzio, Edgar; Ferber, Matt K.; Kirkland, Tim

    2001-12-01

    Silicon carbide may well be the best known material for the manufacture of high performance optical components. This material offers many advantages over glasses and metals that have historically been used in high performance optical systems. A combination of extremely high specific stiffness (E/r), high thermal conductivity and outstanding dimensional stability make silicon carbide superior overall to beryllium and low-expansion glass ceramics. A major impediment to wide use of silicon carbide in optical systems has been the cost associated with preliminary shaping and final finishing of silicon carbide. Because silicon carbide is an extremely hard and strong material, precision machining can only be done with expensive diamond tooling on very stiff high quality machine tools. Near-net-shape slip casting of silicon carbide can greatly reduce the cost of silicon carbide mirror substrates but this process still requires significant diamond grinding of the cast components. The process described here begins by machining the component from all special type of graphite. This graphite can rapidly be machined with conventional multi-axis CNC machine tools to achieve any level of complexity and lightweighting required. The graphite is then directly converted completely to silicon carbide with very small and very predictable dimensional change. After conversion to silicon carbide the optical surface is coated with very fine grain CVD silicon carbide which is easily polished to extreme smoothness. Details of the fabrication process are described and photos and performance specifications of an eight-inch elliptical demonstration mirror are provided.

  18. Fabrication and optical characterization of macroporous silicon photonic crystals

    OpenAIRE

    Balbo, Matteo

    2014-01-01

    The computer revolution experienced in recent years has been possible thanks to semiconductor materials, such as silicon, germanium and gallium arsenide. The success of the silicon-based microelectronics is due to the ability to integrate multiple elements on the same chip such as processors, memories, and interfaces. However, the increasing miniaturization and the realization of faster devices have revealed the difficulty to overcome the intrinsic limits of these materials. For example, devi...

  19. Amorphous Silicon Film Deposition from SiH4 by Chemical Vapor Deposition with Argon Excimer Lamp

    Science.gov (United States)

    Toshikawa, Kiyohiko; Yokotani, Atsushi; Kurosawa, Kou

    2005-11-01

    We have deposited amorphous silicon thin films from monosilane (SiH4) gas by photochemical vapor deposition using a vacuum ultraviolet excimer lamp (VUV-CVD). We used an argon excimer lamp (λ=126 nm, hν=9.8 eV) whose photons are strongly absorbed by SiH4 gas. The substrate temperatures were changed from 25 to 300°C. When the temperature was lower than 150°C, the films included H--Si--H units and H2 molecules in its structure. When it was higher than 150°C, the main structural unit was Si--H.

  20. Laser-induced ferroelectric domain engineering in LiNbO3 crystals using an amorphous silicon overlayer

    Science.gov (United States)

    Zisis, G.; Martinez-Jimenez, G.; Franz, Y.; Healy, N.; Masaud, T. M.; Chong, H. M. H.; Soergel, E.; Peacock, A. C.; Mailis, S.

    2017-08-01

    We report laser-induced poling inhibition and direct poling in lithium niobate crystals (LiNbO3), covered with an amorphous silicon (a-Si) light-absorbing layer, using a visible (488 nm) continuous wave laser source. Our results show that the use of the a-Si overlayer produces deeper poling inhibited domains with minimum surface damage, as compared to previously reported UV laser writing experiments on uncoated crystals, thus increasing the applicability of this method in the production of ferroelectric domain engineered structures for nonlinear optical applications. The characteristics of the poling inhibited domains were investigated using differential etching and piezoresponse force microscopy.

  1. Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering

    Science.gov (United States)

    Hajakbari, Fatemeh; Mojtahedzadeh Larijani, Majid; Ghoranneviss, Mahmood; Aslaninejad, Morteza; Hojabri, Alireza

    2010-09-01

    The structural and optical properties of aluminum nitride (AlN) films deposited on glass and silicon substrates by single ion beam sputtering technique have been investigated. The X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) study revealed the formation of the amorphous phase of AlN. The optical characteristics of films, such as refractive index, extinction coefficient, and average thickness, were calculated by Swanepoel's method using transmittance measurements. The refractive index and average roughness values of the films increased with film thickness. Moreover, it was found that thickness augmentation leads to a decrease in optical band gap energy calculated using Tauc's relation.

  2. Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Tatsuya, E-mail: mtatsuya@jaist.ac.jp, E-mail: mtakashi@jaist.ac.jp [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Masuda, Takashi, E-mail: mtatsuya@jaist.ac.jp, E-mail: mtakashi@jaist.ac.jp; Inoue, Satoshi; Shimoda, Tatsuya [Green Device Research Center, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1211 (Japan); Yano, Hiroshi; Iwamuro, Noriyuki [Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennoudai, Tsukuba, Ibaraki 305-8573 (Japan)

    2016-05-15

    Phosphorus-doped amorphous silicon carbide films were prepared using a polymeric precursor solution. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage, providing semiconducting properties in the films. The valence and conduction states of resultant films were determined directly through the combination of inverse photoemission spectroscopy and photoelectron yield spectroscopy. The incorporated carbon widened energy gap and optical gap comparably in the films with lower carbon concentrations. In contrast, a large deviation between the energy gap and the optical gap was observed at higher carbon contents because of exponential widening of the band tail.

  3. Low Cost Fabrication of Silicon Carbide Based Ceramics and Fiber Reinforced Composites

    Science.gov (United States)

    Singh, M.; Levine, S. R.

    1995-01-01

    A low cost processing technique called reaction forming for the fabrication of near-net and complex shaped components of silicon carbide based ceramics and composites is presented. This process consists of the production of a microporous carbon preform and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture with very good control of pore volume and pore size thereby yielding materials with tailorable microstructure and composition. Mechanical properties (elastic modulus, flexural strength, and fracture toughness) of reaction-formed silicon carbide ceramics are presented. This processing approach is suitable for various kinds of reinforcements such as whiskers, particulates, fibers (tows, weaves, and filaments), and 3-D architectures. This approach has also been used to fabricate continuous silicon carbide fiber reinforced ceramic composites (CFCC's) with silicon carbide based matrices. Strong and tough composites with tailorable matrix microstructure and composition have been obtained. Microstructure and thermomechanical properties of a silicon carbide (SCS-6) fiber reinforced reaction-formed silicon carbide matrix composites are discussed.

  4. 非晶硅锗电池性能的调控研究%Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

    Institute of Scientific and Technical Information of China (English)

    刘伯飞; 白立沙; 魏长春; 孙建; 侯国付; 赵颖; 张晓丹

    2013-01-01

    采用射频等离子体增强化学气相沉积技术,研究了非晶硅锗薄膜太阳电池。针对非晶硅锗薄膜材料的本身特性,通过调控硅锗合金中硅锗的比例,实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制。借助于本征层硅锗材料帯隙梯度的设计,获得了可有效用于多结叠层电池中的非晶硅锗电池。%In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium mate-rial, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.

  5. Preparation of microcrystalline single junction and amorphous-microcrystalline tandem silicon solar cells entirely by hot-wire CVD

    Energy Technology Data Exchange (ETDEWEB)

    Kupich, M.; Grunsky, D.; Kumar, P.; Schroeder, B. [University of Kaiserslautern (Germany). Department of Physics

    2004-01-25

    The hot-wire chemical vapour deposition (HWCVD) has been used to prepare highly conducting p- and n-doped microcrystalline silicon thin layers as well as highly photoconducting, low defect density intrinsic microcrystalline silicon films. These films were incorporated in all-HWCVD, all-microcrystalline nip and pin solar cells, achieving conversion efficiencies of {eta}=5.4% and 4.5%, respectively. At present, only the nip-structures are found to be stable against light-induced degradation. Furthermore, microcrystalline nip and pin structures have been successfully incorporated as bottom cells in all-hot-wire amorphous-microcrystalline nipnip- and pinpin-tandem solar cells for the first time. So far, the highest conversion efficiencies of the 'micromorph' tandem structures are {eta}=5.7% for pinpin-solar cells and 7.0% for nipnip solar cells. (author)

  6. Optimization of amorphous silicon double junction solar cells for an efficient photoelectrochemical water splitting device based on a bismuth vanadate photoanode.

    Science.gov (United States)

    Han, Lihao; Abdi, Fatwa F; Perez Rodriguez, Paula; Dam, Bernard; van de Krol, Roel; Zeman, Miro; Smets, Arno H M

    2014-03-07

    A photoelectrochemical water splitting device (PEC-WSD) was designed and fabricated based on cobalt-phosphate-catalysed and tungsten-gradient-doped bismuth vanadate (W:BiVO4) as the photoanode. A simple and cheap hydrogenated amorphous silicon (a-Si:H) double junction solar cell has been used to provide additional bias. The advantage of using thin film silicon (TF-Si) based solar cells is that this photovoltaic (PV) technology meets the crucial requirements for the PV component in PEC-WSDs based on W:BiVO4 photoanodes. TF-Si PV devices are stable in aqueous solutions, are manufactured by simple and cheap fabrication processes and their spectral response, voltage and current density show an excellent match with the photoanode. This paper is mainly focused on the optimization of the TF-Si solar cell with respect to the remaining solar spectrum transmitted through the W:BiVO4 photoanode. The current matching between the top and bottom cells is studied and optimized by varying the thickness of the a-Si:H top cell. We support the experimental optimization of the current balance between the two sub-cells with simulations of the PV devices. In addition, the impact of the light induced degradation of the a-Si:H double junction, the so-called Staebler-Wronski Effect (SWE), on the performance of the PEC-WSD has been studied. The light soaking experiments on the a-Si:H/a-Si:H double junctions over 1000 hours show that the efficiency of a stand-alone a-Si:H/a-Si:H double junction cell is significantly reduced due to the SWE. Nevertheless, the SWE has a significantly smaller effect on the performance of the PEC-WSD.

  7. Single-walled carbon nanotube/polyaniline/n-silicon solar cells: fabrication, characterization, and performance measurements.

    Science.gov (United States)

    Tune, Daniel D; Flavel, Benjamin S; Quinton, Jamie S; Ellis, Amanda V; Shapter, Joseph G

    2013-02-01

    Carbon nanotube-silicon solar cells are a recently investigated photovoltaic architecture with demonstrated high efficiencies. Silicon solar-cell devices fabricated with a thin film of conductive polymer (polyaniline) have been reported, but these devices can suffer from poor performance due to the limited lateral current-carrying capacity of thin polymer films. Herein, hybrid solar-cell devices of a thin film of polyaniline deposited on silicon and covered by a single-walled carbon nanotube film are fabricated and characterized. These hybrid devices combine the conformal coverage given by the polymer and the excellent electrical properties of single-walled carbon nanotube films and significantly outperform either of their component counterparts. Treatment of the silicon base and carbon nanotubes with hydrofluoric acid and a strong oxidizer (thionyl chloride) leads to a significant improvement in performance.

  8. Use of self-assembled peptide nanostructures for the fabrication of silicon nanowires

    DEFF Research Database (Denmark)

    Andersen, Karsten Brandt; Castillo, Jaime; Bakmand, Tania

    2011-01-01

    it a promising candidate for controlled nanofabrication without organic solvents [1]. The present work demonstrates how this unique structure can be used as both an etching mask in a dry etching procedure and as a lift-off material. As a further demonstration of the potential of this technique, the peptide...... nanotubes were utilized to fabricate silicon nanowire devices and gold nanoslits. 2. RESULTS Silicon nanowire devices were fabricated from a silicon-on-isolator (SOI) wafer, in this case with a device layer of 50 nm and a buried oxide layer of 380 nm. Metal electrodes were first patterned using standard...... photolithography, and after deposition of the electrodes, self-assembled peptide nanotubes (PNT), figure 1, were positioned on top of the electrodes. The silicon nanowires were then etched in a reactive ion etching process masked by the positioned peptide nanotubes. Finally, the peptide nanotubes were dissolved...

  9. Fabrication of silicon nitride/boron nitride nanocomposite powder

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Si3N4/BN nanocomposite powders with the microstructure of the micro-sized α-Si3N4 particles coated with nano-sized BN particles were synthesized via the chemical reaction of boric acid, urea, and α-Si3N4 powder in a hydrogen gas. The results of XRD, TEM, and selected area electron diffraction showed that amorphous BN and a little amount of turbostratic BN(t-BN) were coated on Si3N4 particles as the second phase after reaction at 1100℃. After reheating the composite powders at 1450℃ in a nitrogen gas, the amorphous and turbostratic BN is transformed into h-BN. These nanocomposite powders can be used to prepare Si3N4/BN ceramic composites by hot-pressing at 1800℃, which have perfect machinability and can be drilled with normal metal tools.

  10. High hydrogen dilution and low substrate temperature cause columnar growth of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Bronsveld, Paula C.P.; Rath, Jatindra K.; Schropp, Ruud E.I. [Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, Utrecht University, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Mates, Tomas; Fejfar, Antonin; Kocka, Jan [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Praha 6 (Czech Republic)

    2010-03-15

    Columnar growth was observed in the amorphous part of mixed phase layers deposited at very low substrate temperatures. The width of the columns and the layer thickness at which they are first distinguishable in a cross-sectional transmission electron microscope (X-TEM) image, about 120 nm, is similar for the substrate temperature range of 40-100 C, but the columns are less well developed when either the substrate temperature is increased or the dilution ratio is lowered. This growth behaviour and the incubation layer are attributed to hydrogen-induced surface diffusion of growth precursors resulting in an amorphous-amorphous roughness transition. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  11. Surface-enhanced Raman scattering dendritic substrates fabricated by deposition of gold and silver on silicon.

    Science.gov (United States)

    Cheng, Mingfei; Fang, Jinghuai; Cao, Min; Jin, Yonglong

    2010-11-01

    This paper reports a study on the preparation of gold nanoparticles and silver dendrites on silicon substrates by immersion plating. Firstly, gold was deposited onto silicon wafer from HF aqueous solution containing HAuCl4. Then, the silicon wafer deposited gold was dipped into HF aqueous solution of AgNO3 to form silver coating gold film. Scanning electron microscopy reveals a uniform gold film consisted of gold nanoparticles and rough silver coating gold film containing uniform dendritic structures on silicon surface. By SERS (surface-enhanced Raman scattering) measurements, the fabricated gold and silver coating gold substrates activity toward SERS is assessed. The SERS spectra of crystal violet on the fabricated substrates reflect the different SERS activities on gold nanoparticles film and silver coating gold dendrites film. Compared with pure gold film on silicon, the film of silver coating gold dendrites film significantly increased the SERS intensity. As the fabrication process is very simple, cost-effective and reproducible, and the fabricated silver coating gold substrate is of excellent enhancement ability, spatial uniformity and good stability.

  12. DEVELOPMENT OF A FURNACE TO FABRICATE SILICON SOLAR CELLS

    Directory of Open Access Journals (Sweden)

    Sérgio Boscato Garcia

    2012-06-01

    Full Text Available Solar cell world market had an exponential growth in the last decade and nowadays it continues in expansion. To produce solar cells, dopants need to be introduced into the crystalline silicon wafer in order to form the pn junction. This process is carried out in diffusion furnaces. The aim of this paper is to present the development of a compact diffusion furnace to process up to 156 mm × 156 mm silicon wafers and to operate at temperature up to 1100°C. The furnace is automated and it is constituted by a heating system with three zones and systems to introduce the wafers inside the furnace as well as to control of gas flows. This equipment is the first one developed in Brazil to promote impurity diffusions in order to produce silicon solar cells and it was manufactured jointly with a Brazilian company.

  13. Fabrication and Characterisation of Silicon Waveguides for High-Speed Optical Signal Processing

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup

    This Ph.D. thesis treats various aspects of silicon photonics. From the limitations of silicon as a linear and nonlinear waveguide medium to its synergy with other waveguide materials. Various methods for reducing sidewall roughness and line edge roughness of silicon waveguides are attempted....... The methods include enhancements of etch mask roughness as well as etch isotropy and direct reduction of already present sidewall roughness. Although promising roughness assessments were made based on electron microscopy images it did not translate into significantly lower propagation loss in fabricated...... signal processing could be demonstrated. This includes four wave mixing based wavelength conversion of a 320Gb/s Nyquist OTDM signal and cross phase modulation based signal regeneration of a 40Gb/s OTDM signal. Finally, a new type of low loss electrically driven optical modulator in silicon and silicon...

  14. Fully-depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holland, Stephen E.; Groom, Donald E.; Palaio, Nick P.; Stover, Richard J.; Wei, Mingzhi

    2002-03-28

    Charge-coupled devices (CCD's) have been fabricated on high-resistivity silicon. The resistivity, on the order of 10,000 {Omega}-cm, allows for depletion depths of several hundred microns. Fully-depleted, back-illuminated operation is achieved by the application of a bias voltage to a ohmic contact on the wafer back side consisting of a thin in-situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for good short wavelength response, while the relatively large depleted thickness results in good near-infrared response.

  15. Research and development of photovoltaic power system. Study on growth mechanism of a-Si:H and preparation of the stable, high quality films; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon no seimaku kiko to kohinshitsuka

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, M. [Hiroshima University, Hiroshima (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a film forming mechanism for amorphous silicon for solar cells and its quality improvement. In in-situ observation on plasma CVD surface reaction by using the total reflection infrared absorbing spectroscopy, an observation on a real time basis was performed on the reaction process of an a-Si:H surface in contact with gas mixture plasma composed of SiH4 + CH4. In microscopic observation on initial processes of amorphous silicon growth, surface morphological change before and after a-Si:H deposition at 200{degree}C was observed by using an inter-atomic force microscope. The observation verified that a-Si:H has grown to an atomic layer. In research on defect density in a-Si:H fabricated under high-speed film forming conditions, analysis was made on correlation between the film forming speed at 250{degree}C and defect density in the film. Other research works include those on a high-quality a-SiGe:H film fabricated by using the nanometer film forming/hydrogen plasma annealing method, modulated doping into multi-layer films of a-Si:H/a-Ge:H, and thin film transistor using very thin multi layer films of a-Si:H/a-Ge:H. 5 refs., 12 figs.

  16. DEVELOPMENT OF A FURNACE TO FABRICATE SILICON SOLAR CELLS

    OpenAIRE

    Sérgio Boscato Garcia; Adriano Moehlecke; Izete Zanesco

    2012-01-01

    Solar cell world market had an exponential growth in the last decade and nowadays it continues in expansion. To produce solar cells, dopants need to be introduced into the crystalline silicon wafer in order to form the pn junction. This process is carried out in diffusion furnaces. The aim of this paper is to present the development of a compact diffusion furnace to process up to 156 mm × 156 mm silicon wafers and to operate at temperature up to 1100°C. The furnace is automated an...

  17. Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects

    Science.gov (United States)

    Hsieh, I.-Wei

    In recent years, the research field of silicon photonics has been developing rapidly from a concept to a demonstrated technology, and has gathered much attention from both academia and industry communities. Its many potential applications in long-haul telecommunication, mid-range data-communication, on-chip optical interconnection networks, and nano-scale sensing as well as its compatibility with electronic integrated circuits have driven much effort in realizing silicon photonics both as a disruptive technology for existing markets and as an enabling technology for new ones. Despite the promising future of silicon photonics, many fundamental issues still remain to be understood---both in the linear- and nonlinear-optical regimes. There are also many engineering challenges to make silicon photonics the gold standard in photonic integrated circuits. In this thesis, we focus on the design, fabrication, and characterization of active and passive silicon-on-insulator (SOI) photonic devices. The SOI material system differs from most conventional optical material platforms because of its high-refractive-index-contrast, which enables engineers to design very compact integrated photonic networks with sub-micron transverse waveguide dimensions and sharp bends. On the other hand, because most analytical formulas for designing waveguide devices are valid only in low-index-contrast cases, SOI photonic devices need to be analyzed numerically for accurate results. The second chapter of this thesis describes some common numerical methods such as Beam Propagation Method (BPM) and Finite Element Method (FEM) for waveguide-design simulations, and presents two design studies based on these methods. The compatibility of silicon photonic integrated circuits with conventional CMOS fabrication technology is another important aspect that distinguishes silicon photonics from others such as III-V materials and lithium niobate. However, the requirements for fabricating silicon photonic

  18. Full breast digital mammography with an amorphous silicon-based flat panel detector: physical characteristics of a clinical prototype.

    Science.gov (United States)

    Vedantham, S; Karellas, A; Suryanarayanan, S; Albagli, D; Han, S; Tkaczyk, E J; Landberg, C E; Opsahl-Ong, B; Granfors, P R; Levis, I; D'Orsi, C J; Hendrick, R E

    2000-03-01

    The physical characteristics of a clinical prototype amorphous silicon-based flat panel imager for full-breast digital mammography have been investigated. The imager employs a thin thallium doped CsI scintillator on an amorphous silicon matrix of detector elements with a pixel pitch of 100 microm. Objective criteria such as modulation transfer function (MTF), noise power spectrum, detective quantum efficiency (DQE), and noise equivalent quanta were employed for this evaluation. The presampling MTF was found to be 0.73, 0.42, and 0.28 at 2, 4, and 5 cycles/mm, respectively. The measured DQE of the current prototype utilizing a 28 kVp, Mo-Mo spectrum beam hardened with 4.5 cm Lucite is approximately 55% at close to zero spatial frequency at an exposure of 32.8 mR, and decreases to approximately 40% at a low exposure of 1.3 mR. Detector element nonuniformity and electronic gain variations were not significant after appropriate calibration and software corrections. The response of the imager was linear and did not exhibit signal saturation under tested exposure conditions.

  19. DESIGN, FABRICATION AND RF CHARACTERIZATION OF KA-BAND SILICON IMPATT DIODE

    Directory of Open Access Journals (Sweden)

    TAPAS KUMAR PAL,

    2010-09-01

    Full Text Available A silicon (p+nn+ SDR IMPATT diode for Ka-band operation has been designed by using a double iterative DC and Small signal simulation which involves simultaneous solution of Poisson’s equation and Carrier continuity equation, satisfying appropriate boundary conditions in the depletion layer edges. Using the design parameters,silicon epitaxial n/n+ wafers of appropriate thickness and resistivity of the epitaxial layer have been selected for fabrication of (p+nn+ SDR IMPATT diode for Ka-band operation. The (p+nn+ SDR IMPATT diode has been fabricated through diffusion technique. The optimized process steps of fabrication, starting from wafer cleaningto packaging have been described in details. The DC V-I and RF characteristics of fabricated IMPATT diode have been measured by using an integrated heat sink cum resonant cap waveguide cavity.

  20. Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

    Science.gov (United States)

    Yu, Linwei; Fortuna, Franck; O'Donnell, Benedict; Jeon, Taewoo; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

    2012-08-08

    Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.

  1. Design and Fabrication of Silicon Carbide Semiconductor Detectors

    Institute of Scientific and Technical Information of China (English)

    MENG; Xin; LIU; Yang; HE; Gao-kui

    2015-01-01

    The potential of silicon carbide(SiC)for use in semiconductor nuclear radiation detectors has been recognized for years.SiC detectors have now been demonstrated for high-resolution alpha particle and X-ray energy spectrometry,beta ray,gamma-ray,thermal-and fast-neutron

  2. Fabrication of silicon nanowire arrays by macroscopic galvanic cell-driven metal catalyzed electroless etching in aerated HF solution.

    Science.gov (United States)

    Liu, Lin; Peng, Kui-Qing; Hu, Ya; Wu, Xiao-Ling; Lee, Shuit-Tong

    2014-03-05

    Macroscopic galvanic cell-driven metal catalyzed electroless etching (MCEE) of silicon in aqueous hydrofluoric acid (HF) solution is devised to fabricate silicon nanowire (SiNW) arrays with dissolved oxygen acting as the one and only oxidizing agent. The key aspect of this strategy is the use of a graphite or other noble metal electrode that is electrically coupled with silicon substrate.

  3. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-08-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  4. Fabrication of a ZnO:Al/Amorphous-FeSi2 Heterojunction at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    XU Jia-Xiong; YAO Ruo-He; LIU Yu-Rong

    2011-01-01

    A prototype ZnO:A1/amorphous-FeSi2 heterojunction was successfully prepared on a glass substrate by magnetron sputtering at room temperature.The structural and electrical properties of as-deposited FeSi2 thin fihns were investigated using x-ray diffraction,Raman scattering,resistivity.and carrier lifetime measurement.The FeSi2 thin film showed an amorphous phase with resistivity of 9.685Ω·cm and carrier lifetime of 9.5μs.The prototype ZnO:Al/amorphous-FeSi2 heterojunction exhibited a rectifying property of the diode from the dark current-voltage characteristic.This propert was evaluated using the shunt resistance and diode ideal factor.The experimental results suggest that the amorphous-FeSi2 thin film has promising applications in hetero junction devices with low thermal budget and low product cost.Recently,the β-FeSi2 thin film has been proposed as a promising material for applications in optoelectronic and microelectronic devices.Its band gap of about 0.85eV leads to a light emission at about 1.55 μm,which matches with the minimum absorption window of silica-based optical fibers.[1] The extremely high optical absorption coefficient (higher than 1 × 105cm-1 at 1.0eV) makes it useful as a thin film solar cell material.[2] In addition,β-FeSi2 is environmentally friendly since Fe and Si are non-toxic and abundant in the Earth's crust.[3]%A prototype ZnO:Al/amorphous-FeSi2 heterojunction was successfully prepared on a glass substrate by magnetron sputtering at room temperature. The structural and electrical properties of as-deposited FeSi2 thin Rims were investigated using x-ray diffraction, Raman scattering, resistivity, and carrier lifetime measurement. The FeSi'2 thin film showed an amorphous phase with resistivity of 9.685 Ω·cm and carrier lifetime of 9.5 μs. The prototype ZnO:Al/amorphous-FeSi2 heterojunction exhibited a rectifying property of the diode from the dark current-voltage characteristic. This propert was evaluated using the shunt resistance

  5. The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

    NARCIS (Netherlands)

    Demontis, V.; Sanna, C.; Melskens, J.; Santbergen, R.; Smets, A.H.M.; Damiano, A.; Zeman, M.

    2013-01-01

    Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxid

  6. The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

    NARCIS (Netherlands)

    Demontis, V.; Sanna, C.; Melskens, J.; Santbergen, R.; Smets, A.H.M.; Damiano, A.; Zeman, M.

    2013-01-01

    Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxid

  7. Fabrication Characteristics of Silicon Nanowires via the Electrochemical Electroless Etching Method.

    Science.gov (United States)

    Kang, ByeongSu; Jeong, Chae Hwan; Kim, Changheon; Kim, Min-Young; Choi, Bum Ho; Lee, Moo Sung; Kim, Ho-Sung

    2015-07-01

    A silicon nanowire structure was fabricated using the electrochemical electroless etching method, involving electroless plating and the electrochemical etching process. The reflection of the absorption layer with the nanowires' structure was about 5%, which is better than a bulk-type solar cell (10%).

  8. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias

    Science.gov (United States)

    Gee, James M; Schmit, Russell R.

    2007-01-30

    Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.

  9. Fabrication of Silicon Nanobelts and Nanopillars by Soft Lithography for Hydrophobic and Hydrophilic Photonic Surfaces.

    Science.gov (United States)

    Baquedano, Estela; Martinez, Ramses V; Llorens, José M; Postigo, Pablo A

    2017-05-11

    Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiOx (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.

  10. Mechanical Properties and Microstructure of Biomorphic Silicon Carbide Ceramics Fabricated from Wood Precursors

    Science.gov (United States)

    Singh, Mrityunjay; Salem, J. A.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide based, environment friendly, biomorphic ceramics have been fabricated by the pyrolysis and infiltration of natural wood (maple and mahogany) precursors. This technology provides an eco-friendly route to advanced ceramic materials. These biomorphic silicon carbide ceramics have tailorable properties and behave like silicon carbide based materials manufactured by conventional approaches. The elastic moduli and fracture toughness of biomorphic ceramics strongly depend on the properties of starting wood preforms and the degree of molten silicon infiltration. Mechanical properties of silicon carbide ceramics fabricated from maple wood precursors indicate the flexural strengths of 3441+/-58 MPa at room temperature and 230136 MPa at 1350C. Room temperature fracture toughness of the maple based material is 2.6 +/- 0.2 MPa(square root of)m while the mahogany precursor derived ceramics show a fracture toughness of 2.0 +/- 0.2 Mpa(square root of)m. The fracture toughness and the strength increase as the density of final material increases. Fractographic characterization indicates the failure origins to be pores and chipped pockets of silicon.

  11. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

    Science.gov (United States)

    Tsai, Shu-Ju; Wang, Chiang-Lun; Lee, Hung-Chun; Lin, Chun-Yeh; Chen, Jhih-Wei; Shiu, Hong-Wei; Chang, Lo-Yueh; Hsueh, Han-Ting; Chen, Hung-Ying; Tsai, Jyun-Yu; Lu, Ying-Hsin; Chang, Ting-Chang; Tu, Li-Wei; Teng, Hsisheng; Chen, Yi-Chun; Chen, Chia-Hao; Wu, Chung-Lin

    2016-06-01

    In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these dielectrics are still limited by various structural defects on the hetero-interfaces and inside the dielectrics. Here, we show that another insulating silicon compound, amorphous silicon nitride (a-Si3N4), is a promising candidate of effective electrical insulator for use as a high-k dielectric. We have examined a-Si3N4 deposited using the plasma-assisted atomic beam deposition (PA-ABD) technique in an ultra-high vacuum (UHV) environment and demonstrated the absence of defect-related luminescence; it was also found that the electronic structure across the a-Si3N4/Si heterojunction approaches the intrinsic limit, which exhibits large band gap energy and valence band offset. We demonstrate that charge transport properties in the metal/a-Si3N4/Si (MNS) structures approach defect-free limits with a large breakdown field and a low leakage current. Using PA-ABD, our results suggest a general strategy to markedly improve the performance of gate dielectric using a nearly defect-free insulator.

  12. Design and fabrication of wraparound contact silicon solar cells

    Science.gov (United States)

    Scott-Monck, J. A.; Stella, P. M.; Avery, J. E.

    1972-01-01

    Both dielectric insulation and etched junction contact techniques were evaluated for use in wraparound contact cell fabrication. Since a suitable process for depositing the dielectrics was not achieved, the latter approach was taken. The relationship between loss of back contact and power degradation due to increased series resistance was established and used to design a simple contact configuration for 10 ohm-cm etched wraparound junction contact N/P cells. A slightly deeper junction significantly improved cell curve shape and the associated loss of current was regained by using thinner contact grid fingers. One thousand cells with efficiencies greater than 10.5% were fabricated to demonstrate the process.

  13. Feasibility study for double-sided silicon microstrip detector fabrication at IRST

    CERN Document Server

    Betta, G F D; Bosisio, L; Carmel-Barnea, N; Ferrario, L; Pignatel, Giogrio Umberto; Rachevskaia, I; Zen, M; Zorzi, N

    1999-01-01

    This paper is concerned with the preliminary results of a technological study aimed at the development of a fabrication process for double-sided AC-coupled silicon microstrip detectors. The approach adopted for the fabrication of both single-sided and double-sided detectors is presented, and the results from electrical tests performed on detectors and test structures are reported and discussed. Good electrical characteristics as well as an acceptable number of process-related defects have been obtained for these prototype detectors, thus demonstrating the feasibility of fabricating such devices at the IRST facility. (author)

  14. Role of the buffer layer in the active junction in amorphous-crystalline silicon heterojunction solar cells

    Science.gov (United States)

    Pallarès, J.; Schropp, R. E. I.

    2000-07-01

    We fabricated pn and pin a-SiC:H/c-Si heterojunction solar cells following two different processes. In the first approach, wafers were subjected to an extra atomic hydrogen (produced by hot wire chemical vapor deposition) prior to the deposition of the amorphous layer. A reduction in the open-circuit voltage was observed for the passivated cells due to their higher leakage current. In the second process, pin solar cells with two different quality intrinsic a-Si:H buffer layers were fabricated using plasma enhanced chemical vapor deposition. The cells with a device quality buffer layer (deposited at higher temperature) showed better performance than those with a buffer layer with high hydrogen content and higher defect density (deposited at lower temperatures).

  15. Fabrication and thermal characterization of amorphous and nanocrystalline Al{sub 9}FeNi/Al{sub 3}Ti compound

    Energy Technology Data Exchange (ETDEWEB)

    Tavoosi, Majid, E-mail: ma.tavoosi@gmail.com

    2017-01-15

    In this study, the fabrication and structural characterization of amorphous/nanocrystalline Al{sub 9}FeNi/Al{sub 3}Ti phase has been performed. In this regards, milling and annealing processes were applied on Al{sub 80}Fe{sub 10}Ti{sub 5}Ni{sub 5} (at. %) powder mixture for different periods of time. The prepared samples were characterized using X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM and TEM) and differential scanning calorimetery (DSC). According to the results, supersaturated solid solution, nanocrystalline Al{sub 9}FeNi/Al{sub 3}Ti (with average crystallite size of about 7 nm) and amorphous phases indicated three different microstructures which can be formed in Al{sub 80}Fe{sub 10}Ti{sub 5}Ni{sub 5} system during milling process. The formed supersaturated solid solution and amorphous phases were unstable and transformed to Al{sub 9}FeNi/Al{sub 3}Ti intermetallic compound during annealing process. It is shown that, Al{sub 9}FeNi phase in Al{sub 9}FeNi/Al{sub 3}Ti intermetallic compound can decompose into Al{sub 3}Ni, Al{sub 13}Fe{sub 4} and liquid phases during a reversible peritectic reaction at 809 °C. - Highlights: • We study the effect of milling process on Al{sub 80}Fe{sub 10}Ti{sub 5}Ni{sub 5} alloy. • We study the effect of annealing on Al{sub 80}Fe{sub 10}Ti{sub 5}Ni{sub 5} supersaturated solid solution phase. • We study the effect of annealing on Al{sub 80}Fe{sub 10}Ti{sub 5}Ni{sub 5} amorphous phase. • We study the thermal behaviour of Al{sub 9}FeNi/Al{sub 3}Ti compound.

  16. Top-down Fabrication and Enhanced Active Area Electronic Characteristics of Amorphous Oxide Nanoribbons for Flexible Electronics.

    Science.gov (United States)

    Jang, Hyun-June; Joong Lee, Ki; Jo, Kwang-Won; Katz, Howard E; Cho, Won-Ju; Shin, Yong-Beom

    2017-07-18

    Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either "bottom-up" growth techniques or by "top-down" e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm(2)/Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.

  17. Complex microstructure fabrication by integrating silicon anisotropic etching and UV-LIGA technology

    Institute of Scientific and Technical Information of China (English)

    Jing Xiangmeng; Chen Di; Huang Chuang; Chen Xiang; Liu Jingquan; Zhu Jun

    2007-01-01

    A fabrication method which integrates silicon anisotropic etching micromachining with UV-LIGA technology to make complex microstructures is presented.This proposod combined process enables the fabrication of high-aspect-ratio and three-dimensional(3D)microstmctures,which cannot be fabricated by silicon bulk micromachining or UV-LIGA alone.To demonstrate this combined method.the 100μm thick SU-8 micro gears were fabricated on the silicon convex square structure.which is 100μm×100μm×80μm in dimension.In the subsequent micro hot embossing process,a novel type of plastics polyethylene terephtalate glycol(PETG)Was tried for use.Through optimizing process parameters,PETG shows the potential of being used as plastic replica in micro-electro-mechanical system(MEMS).This fabrication technology provides a new option for the increasing need of functionality,quality and economy of MEMS.

  18. Sub-15 nm Silicon Lines Fabrication via PS-b-PDMS Block Copolymer Lithography

    Directory of Open Access Journals (Sweden)

    Sozaraj Rasappa

    2013-01-01

    Full Text Available This paper describes the fabrication of nanodimensioned silicon structures on silicon wafers from thin films of a poly(styrene-block-poly(dimethylsiloxane (PS-b-PDMS block copolymer (BCP precursor self-assembling into cylindrical morphology in the bulk. The structure alignment of the PS-b-PDMS (33 k–17 k was conditioned by applying solvent and solvothermal annealing techniques. BCP nanopatterns formed after the annealing process have been confirmed by scanning electron microscope (SEM after removal of upper PDMS wetting layer by plasma etching. Silicon nanostructures were obtained by subsequent plasma etching to the underlying substrate by an anisotropic dry etching process. SEM images reveal the formation of silicon nanostructures, notably of sub-15 nm dimensions.

  19. Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-10-01

    Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

  20. Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

    NARCIS (Netherlands)

    Ponomarev, M. V.; Sharma, K.; Verheijen, M. A.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Plasma-deposited aluminum-doped ZnO (ZnO:Al) demonstrated a resistivity gradient as function of the film thickness, extending up to about 600 nm. This gradient decreased sharply when the ZnO:Al was capped by a hydrogenated amorphous silicon layer (a-Si:H) and subsequently treated according to the so

  1. Transmission Electron Microscopy of Amorphous Tandem Thin-Film Silicon Modules Produced by A Roll-to-Roll Process on Plastic Foil

    DEFF Research Database (Denmark)

    Couty, P.; Duchamp, Martial; Söderström, K.;

    2011-01-01

    An improvement of the photo-current is expected when amorphous silicon solar cells are grown on a ZnO texture. A full understanding of the relationship between cell structure and electrical performance is essential for the rapid development of high efficiency VHF-tandem cells on textured substrates...

  2. Hydrogenated amorphous silicon p-i-n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

    NARCIS (Netherlands)

    Wank, M. A.; van Swaaij, R.; R. van de Sanden,; Zeman, M.

    2012-01-01

    We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200 degrees C and growth rates of about 1?nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densification with incr

  3. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters; Preparacion y Caracterizacion de Dispositivos Fotovoltaicos de Silicio Amorfo con Emisiones Microcristalinos

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J. [CIEMAT. Madrid (Spain)

    1999-11-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p-and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)

  4. Amorphous silicon carbon films prepared by hybrid plasma enhanced chemical vapor/sputtering deposition system: Effects of r.f. power

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Nur Maisarah Abdul, E-mail: nurmaisarahrashid@gmail.com [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ritikos, Richard; Othman, Maisara; Khanis, Noor Hamizah; Gani, Siti Meriam Ab. [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Muhamad, Muhamad Rasat [Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Rahman, Saadah Abdul, E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2013-02-01

    Silicon carbon films were deposited using a hybrid radio frequency (r.f.) plasma enhanced chemical vapor deposition (PECVD)/sputtering deposition system at different r.f. powers. This deposition system combines the advantages of r.f. PECVD and sputtering techniques for the deposition of silicon carbon films with the added advantage of eliminating the use of highly toxic silane gas in the deposition process. Silicon (Si) atoms were sputtered from a pure amorphous silicon (a-Si) target by argon (Ar) ions and carbon (C) atoms were incorporated into the film from C based growth radicals generated through the discharge of methane (CH{sub 4}) gas. The effects of r.f. powers of 60, 80, 100, 120 and 150 W applied during the deposition process on the structural and optical properties of the films were investigated. Raman spectroscopic studies showed that the silicon carbon films contain amorphous silicon carbide (SiC) and amorphous carbon (a-C) phases. The r.f. power showed significant influence on the C incorporation in the film structure. The a-C phases became more ordered in films with high C incorporation in the film structure. These films also produced high photoluminescence emission intensity at around 600 nm wavelength as a result of quantum confinement effects from the presence of sp{sup 2} C clusters embedded in the a-SiC and a-C phases in the films. - Highlights: ► Effects of radio frequency (r.f.) power on silicon carbon (SiC) films were studied. ► Hybrid plasma enhanced chemical vapor deposition/sputtering technique was used. ► r.f. power influences C incorporation in the film structure. ► High C incorporation results in higher ordering of the amorphous C phase. ► These films produced high photoluminescence emission intensity.

  5. Fabrication and optical simulation of vertically aligned silicon nanowires

    Science.gov (United States)

    Hossain, M. K.; Salhi, B.; Mukhaimer, A. W.; Al-Sulaiman, F. A.

    2016-10-01

    Silicon nanowires (Si-NWs) have been considered widely as a perfect light absorber with strong evidence of enhanced optical functionalities. Here we report finite-difference time-domain simulations for Si-NWs to elucidate the key factors that determine enhanced light absorption, energy flow behavior, electric field profile, and excitons generation rate distribution. To avoid further complexity, a single Si-NW of cylindrical shape was modeled on c-Si and optimized to elucidate the aforementioned characteristics. Light absorption and energy flow distribution confirmed that Si-NW facilitates to confine photon absorption of several orders of enhancement whereas the energy flow is also distributed along the wire itself. With reference to electric field and excitons generation distribution it was revealed that Si-NW possesses the sites of strongest field distributions compared to those of flat silicon wafer. To realize the potential of Si-NWs-based thin film solar cell, a simple process was adopted to acquire vertically aligned Si-NWs grown on c-Si wafer. Further topographic characterizations were conducted through scanning electron microscope and tunneling electron microscope-coupled energy-dispersive spectroscopy.

  6. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching.

    Science.gov (United States)

    Li, Zhiqin; Chen, Yiqin; Zhu, Xupeng; Zheng, Mengjie; Dong, Fengliang; Chen, Peipei; Xu, Lihua; Chu, Weiguo; Duan, Huigao

    2016-09-09

    Single-crystal silicon nanostructures have attracted much attention in recent years due in part to their unique optical properties. In this work, we demonstrate direct fabrication of single-crystal silicon nanotubes with sub-10 nm walls which show low reflectivity. The fabrication was based on a cryogenic inductively coupled plasma reactive ion etching process using high-resolution hydrogen silsesquioxane nanostructures as the hard mask. Two main etching parameters including substrate low-frequency power and SF6/O2 flow rate ratio were investigated to determine the etching mechanism in the process. With optimized etching parameters, high-aspect-ratio silicon nanotubes with smooth and vertical sub-10 nm walls were fabricated. Compared to commonly-used antireflection silicon nanopillars with the same feature size, the densely packed silicon nanotubes possessed a lower reflectivity, implying possible potential applications of silicon nanotubes in photovoltaics.

  7. Fabricating 40 µm-thin silicon solar cells with different orientations by using SLiM-cut method

    Science.gov (United States)

    Wang, Teng-Yu; Chen, Chien-Hsun; Shiao, Jui-Chung; Chen, Sung-Yu; Du, Chen-Hsun

    2017-10-01

    Thin silicon foils with different crystal orientations were fabricated using the stress induced lift-off (SLiM-cut) method. The thickness of the silicon foils was approximately 40 µm. The ≤ft foil had a smoother surface than the ≤ft foil. With surface passivation, the minority carrier lifetimes of the ≤ft and ≤ft silicon foil were 1.0 µs and 1.6 µs, respectively. In this study, 4 cm2-thin silicon solar cells with heterojunction structures were fabricated. The energy conversion efficiencies were determined to be 10.74% and 14.74% for the ≤ft and ≤ft solar cells, respectively. The surface quality of the silicon foils was determined to affect the solar cell character. This study demonstrated that fabricating the solar cell by using silicon foil obtained from the SLiM-cut method is feasible.

  8. Wavelength dependence of silicon avalanche photodiode fabricated by CMOS process

    Science.gov (United States)

    Mohammed Napiah, Zul Atfyi Fauzan; Hishiki, Takuya; Iiyama, Koichi

    2017-07-01

    Avalanche photodiodes fabricated by CMOS process (CMOS-APDs) have features of high avalanche gain below 10 V, wide bandwidth over 5 GHz, and easy integration with electronic circuits. In CMOS-APDs, guard ring structure is introduced for high-speed operation by canceling photo-generated carriers in the substrate at the sacrifice of the responsivity. We describe here wavelength dependence of the responsivity and the bandwidth of the CMOS-APDs with shorted and opened guard ring structure.

  9. A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases

    Directory of Open Access Journals (Sweden)

    A. Kole

    2011-01-01

    Full Text Available Structural evolution of the hydrogenated amorphous silicon carbide (a-SiC:H films deposited by rf-PECVD from a mixture of SiH4 and CH4 diluted in Ar shows that a smooth transition from amorphous to nanocrystalline phase occurs in the material by increasing the Ar dilution. The optical band gap (Eg decreases from 1.99 eV to 1.91 eV and the H-content (CH decreases from 14.32 at% to 5.29 at% by increasing the dilution from 94 % to 98 %. at 98 % Ar dilution, the material contains irregular shape Si nanocrystallites with sizes over 10 nm. Increasing the Ar dilution further to 98.4 % leads to a reduction of the size of the Si nanocrystals to regular shape Si quantum dots of size about 5 nm. The quantum confinement effect is apparent from the increase in the Eg value to 2.6 eV at 98.4 % Ar dilution. Formation of Si quantum dots may be explained by the etching of the nanocrystallites of Si by the energetic ion bombardment from the plasma.

  10. Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    Seung Yeop Myong

    2007-01-01

    Full Text Available The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H- based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

  11. Study on the effect of process conditions on the thermo-optic coefficient of amorphous silicon films

    Science.gov (United States)

    Zhou, Xiang; Liu, Shuang; Tang, Haihua; Zhong, Zhiyong; Liu, Yong

    2016-05-01

    A thermo-optical coefficient (TOC) test platform based on FILMeasure-20 was designed and the thermal coefficient of hydrogenated amorphous silicon (a-Si:H) thin films material at 1330 nm was tested. a-Si:H were deposited on the quartz glass using a plasma-enhanced chemical vapor deposition (PECVD) system. Fourier transform infrared spectrometer (FTIR) was used to characterize the infrared spectral feature of films. The hydrogen content of films was influenced by different radio frequency (RF) power and deposition pressure conditions according to the FTIR spectra and theoretical analysis, and the thermo-optic effect of a-Si:H varied with temperature characteristics. Experimental results indicated that selecting the appropriate process conditions to prepare a-Si:H films can effectively increase or avoid the impact of thermo-optical effect on the optical devices.

  12. PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

    Institute of Scientific and Technical Information of China (English)

    Xu Jun; Ma Tian-fu; Li Wei; Chen Kun-ji; Li Zhi-feng; Lu Wei

    2000-01-01

    Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown byusing an organic source, xylene (C8H{10), instead of methane(CH4) in a conventional plasma enhanced chemical vapor depositionsystem. The optical band gap of these samples was increased gradually bychanging the gas ratio of C8H10 to SiH4. The film with highoptical band gap was soft and polymer-like and intense photoluminescencewere obtained. Room temperature electro-luminescence was also achievedwith peak energy at 2.05 eV (600 nm) for the a-SiC:H film withoptical band gap of 3.2 eV.1.8mm

  13. Kinetics of the laser-induced solid phase crystallization of amorphous silicon-Time-resolved Raman spectroscopy and computer simulations

    Science.gov (United States)

    Očenášek, J.; Novák, P.; Prušáková, L.

    2017-01-01

    This study demonstrates that a laser-induced crystallization instrumented with Raman spectroscopy is, in general, an effective tool to study the thermally activated crystallization kinetics. It is shown, for the solid phase crystallization of an amorphous silicon thin film, that the integral intensity of Raman spectra corresponding to the crystalline phase grows linearly in the time-logarithmic scale. A mathematical model, which assumes random nucleation and crystal growth, was designed to simulate the crystallization process in the non-uniform temperature field induced by laser. The model is based on solving the Eikonal equation and the Arhenius temperature dependence of the crystal nucleation and the growth rate. These computer simulations successfully approximate the crystallization process kinetics and suggest that laser-induced crystallization is primarily thermally activated.

  14. Solar Hydrogen Production by Amorphous Silicon Photocathodes Coated with a Magnetron Sputter Deposited Mo2C Catalyst.

    Science.gov (United States)

    Morales-Guio, Carlos G; Thorwarth, Kerstin; Niesen, Bjoern; Liardet, Laurent; Patscheider, Jörg; Ballif, Christophe; Hu, Xile

    2015-06-10

    Coupling of Earth-abundant hydrogen evolution catalysts to photoabsorbers is crucial for the production of hydrogen fuel using sunlight. In this work, we demonstrate the use of magnetron sputtering to deposit Mo2C as an efficient hydrogen evolution reaction catalyst onto surface-protected amorphous silicon (a-Si) photoabsorbers. The a-Si/Mo2C photocathode evolves hydrogen under simulated solar illumination in strongly acidic and alkaline electrolytes. Onsets of photocurrents are observed at potentials as positive as 0.85 V vs RHE. Under AM 1.5G (1 sun) illumination, the photocathodes reach current densities of -11.2 mA cm(-2) at the reversible hydrogen potential in 0.1 M H2SO4 and 1.0 M KOH. The high photovoltage and low-cost of the Mo2C/a-Si assembly make it a promising photocathode for solar hydrogen production.

  15. Vibrational mean free paths and thermal conductivity of amorphous silicon from non-equilibrium molecular dynamics simulations

    Science.gov (United States)

    Sääskilahti, K.; Oksanen, J.; Tulkki, J.; McGaughey, A. J. H.; Volz, S.

    2016-12-01

    The frequency-dependent mean free paths (MFPs) of vibrational heat carriers in amorphous silicon are predicted from the length dependence of the spectrally decomposed heat current (SDHC) obtained from non-equilibrium molecular dynamics simulations. The results suggest a (frequency)- 2 scaling of the room-temperature MFPs below 5 THz. The MFPs exhibit a local maximum at a frequency of 8 THz and fall below 1 nm at frequencies greater than 10 THz, indicating localized vibrations. The MFPs extracted from sub-10 nm system-size simulations are used to predict the length-dependence of thermal conductivity up to system sizes of 100 nm and good agreement is found with independent molecular dynamics simulations. Weighting the SDHC by the frequency-dependent quantum occupation function provides a simple and convenient method to account for quantum statistics and provides reasonable agreement with the experimentally-measured trend and magnitude.

  16. Vibrational mean free paths and thermal conductivity of amorphous silicon from non-equilibrium molecular dynamics simulations

    CERN Document Server

    Sääskilahti, K; Tulkki, J; McGaughey, A J H; Volz, S

    2016-01-01

    The frequency-dependent mean free paths (MFPs) of vibrational heat carriers in amorphous silicon are predicted from the length dependence of the spectrally decomposed heat current (SDHC) obtained from non-equilibrium molecular dynamics simulations. The results suggest a (frequency)$^{-2}$ scaling of the room-temperature MFPs below 5 THz. The MFPs exhibit a local maximum at a frequency of 8 THz and fall below 1 nm at frequencies greater than 10 THz, indicating localized vibrations. The MFPs extracted from sub-10 nm system-size simulations are used to predict the length-dependence of thermal conductivity up to system sizes of 100 nm and good agreement is found with separate molecular dynamics simulations. Weighting the SDHC by the frequency-dependent quantum occupation function provides a simple and convenient method to account for quantum statistics and provides reasonable agreement with the experimentally-measured trend and magnitude.

  17. Spatially-Resolved Crystallization of Amorphous Silicon Films on the Glass Substrate by Multi-beam Laser Interference

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Laser interference induced crystallization of amorphous silicon (a-Si) on the glass substrate was performed using a Q-switched Nd:YAG (yttrium aluminum garnet) laser. White light interferometer (WLI) and atomic force microscope (AFM) were used to characterize the morphology of the structured films, while X-ray diffraction (XRD), combined with the AFM, was used to analyse the crystalline structure of the film. The experimental results show that the laser energy density above a certain threshold, in the range of 400-500 mJ/cm2,triggers the patterned crystallizations which take the form similar to the laser intensity distribution. For the patterned crystallization under multipulse exposure, a definite polycrystalline structure with individual phases was observed by XRD. The difference in feature form, e.g., deepened craters or heightened lines, is related to the laser energy density relative to the threshold of evaporation of the material.

  18. The correlation of open-circuit voltage with bandgap in amorphous silicon-based pin solar cells

    Science.gov (United States)

    Crandall, R. S.; Schiff, E. A.

    1996-01-01

    We briefly review the correlation of open-circuit voltages VOC with the bandgap of the intrinsic layer in amorphous silicon based pin solar cells. We discuss two mechanisms which limit VOC: intrinsic layer recombination, and the built-in potential VBI. In particular we discuss Li's proposal that the open-circuit voltages in higher bandgap cells (EG>1.9 eV) are VBI-limited. Based on computer simulations of pin solar cells we propose that VBI limitation occurs when the recombination limit to VOC exceeds the cell's field-reversal voltage VR. For a-Si:H based cells this field-reversal voltage occurs at about VBI-0.3 V. This proposal would account for the observation that VBI limitation occurs for VOC significantly smaller than VBI.

  19. Amorphous silicon films with high deposition rate prepared using argon and hydrogen diluted silane for stable solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gogoi, Purabi; Agarwal, Pratima [Department of Physics, IIT Guwahati, Guwahati 781039 (India); Dixit, P.N. [Plasma Processed Materials Division, National Physical Laboratory, New Delhi 110012 (India)

    2007-08-15

    Hydrogenated amorphous silicon films with high deposition rate (4-5 Aa/s) and reduced Staebler-Wronski effect are prepared using a mixture of silane (SiH{sub 4}), hydrogen and argon. The films show an improvement in short and medium range order. The structural, transport and stability studies on the films are done using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman scattering studies, electrical conductivity and diffusion length measurement. Presence of both atomic hydrogen and Ar{sup *} in the plasma causes breaking of weak Si-Si bonds and subsequent reconstruction of strong bonds resulting in improvement of short and medium range order. The improved structural order enhances the stability of these films against light soaking. High deposition rate is due to the lesser etching of growing surface compared to the case of only hydrogen diluted silane. (author)

  20. Fabrication of novel poly(lactic acid)/amorphous magnesium phosphate bionanocomposite fibers for tissue engineering applications via electrospinning

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Huan, E-mail: Huan.Zhou@Rockets.utoledo.edu [Department of Mechanical, Industrial and Manufacturing Engineering, The University of Toledo, Toledo, OH (United States); Nabiyouni, Maryam [Department of Bioengineering, The University of Toledo, Toledo, OH (United States); Lin, Boren [Department of Biological Sciences, The University of Toledo, Toledo, OH (United States); Bhaduri, Sarit B. [Department of Mechanical, Industrial and Manufacturing Engineering, The University of Toledo, Toledo, OH (United States); Department of Surgery (Dentistry), The University of Toledo, Toledo, OH (United States)

    2013-05-01

    Fibrous bionanocomposites consisting of amorphous magnesium phosphate (AMP) nanospheres and polylactic acid (PLA) were fabricated by electrospinning. There are two important signatures of this paper. First, AMP, as an alternative to well-known calcium phosphate (CaP) materials, is added to PLA as the second phase. To the best of our knowledge, it is the first attempt to fabricate magnesium phosphate (MgP)/biopolymer composite. This is made possible by our previously reported research on the successful synthesis of AMP nanospheres via microwave processing. Second, the sustained release of magnesium and phosphate ions from PLA matrix can stimulate a series of cell responses. The structure of the composites and their bone-like apatite-forming abilities in simulated body fluid (SBF) were examined. Additionally, the effects on the proliferation and differentiation of preosteoblast cells were evaluated by performing in vitro cell culture and monitoring markers such as Osteocalcin (OCN), Osteopontin (OPN), Alkaline phosphatase (ALP) and Collagen type-I (Col I) using real-time polymerase chain reaction (PCR). For better dispersion of AMP in the fibers, a surfactant, 12-hydroxysteric acid (HSA), as previously reported in the literature, was used. However, HSA significantly inhibited the proliferation and differentiation of preosteoblast cells, indicating the potential risk in using HSA in the combination of AMP or MgP in tissue engineering applications. - Highlights: ► Amorphous magnesium phosphate (AMP) nanospheres was synthesized. ► AMP/poly lactic acid (PLA) matrix was fabricated via electrospinning. ► AMP was found to be beneficial to MC3T3 preosteoblast cells proliferation. ► Surfactant 12-hydroxysteric acid (HSA) was toxic to preosteoblast cells.