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Sample records for fabricate thick aln

  1. Fabrication of piezoelectric AlN thin film for FBARs

    Institute of Scientific and Technical Information of China (English)

    LIU Wei-Kuo; TAY Kok-Wan; KUO Sin-Cha; WU Menq-Jion

    2009-01-01

    This paper focuses on the fabrication of film bulk acoustic-wave resonator (FBAR) comprising an alu-minum nitride (AlN) piezoelectric thin film sandwiched between two metal electrodes and located on a silicon substrate with a low-stress silicon nitride (Si3N4) support membrane for high frequency wireless applications, and analyzes the optimization of the thin AlN film deposition parameters on Mo electrodes using the reactive RF magnetron sputter system. Several critical parameters of the sputtering process such as RF power and Ar/N2 flow rate ratio were studied to clarify their effects on different electrodes characteristics of the AlN films. The experiment indicated that the process for Mo electrode was easier compared with that of the Pt/Ti or Au/Cr bi-layer electrode as it entailed only one photo resist and metal deposition step. Besides, Pt/Ti or Au/Cr electrodes reduced the resonance frequency due to their high mass density and low bulk acoustic velocity. Compared with the case of the AI bottom electrode, there is no evident amorphous layer between the Mo bottom electrode and the deposited AlN film. The characteristics of the FBAR devices depend not only upon the thickness and quality of the AlN film, but also upon the thickness of the top electrode and the materials used. The results indicate that decreas-ing the thickness of either the AlN film or the top electrode increases the resonance frequency. This suggests the potential of tuning the performance of the FBAR device by carefully controlling AlN film thickness. Besides, increasing either the thickness of the AlN film or higher RF power has improved a stronger c-axis orientation and tended to promote a narrower rocking curve full-width at half-maximum (FWHM), but increased both the grain size and the surface roughness. An FBAR device fabricated un-der optimal AlN deposition parameters has demonstrated the effective electromechanical coupling co-efficient (Keff2) and the quality factor (Qfx) are about 1

  2. Fabrication of piezoelectric AlN thin film for FBARs

    Institute of Scientific and Technical Information of China (English)

    TAY; Kok-Wan; KUO; Sin-Cha; WU; Menq-Jion

    2009-01-01

    This paper focuses on the fabrication of film bulk acoustic-wave resonator (FBAR) comprising an alu- minum nitride (AlN) piezoelectric thin film sandwiched between two metal electrodes and located on a silicon substrate with a low-stress silicon nitride (Si3N4) support membrane for high frequency wireless applications, and analyzes the optimization of the thin AlN film deposition parameters on Mo electrodes using the reactive RF magnetron sputter system. Several critical parameters of the sputtering process such as RF power and Ar/N2 flow rate ratio were studied to clarify their effects on different electrodes characteristics of the AlN films. The experiment indicated that the process for Mo electrode was easier compared with that of the Pt/Ti or Au/Cr bi-layer electrode as it entailed only one photo resist and metal deposition step. Besides, Pt/Ti or Au/Cr electrodes reduced the resonance frequency due to their high mass density and low bulk acoustic velocity. Compared with the case of the Al bottom electrode, there is no evident amorphous layer between the Mo bottom electrode and the deposited AlN film. The characteristics of the FBAR devices depend not only upon the thickness and quality of the AlN film, but also upon the thickness of the top electrode and the materials used. The results indicate that decreas- ing the thickness of either the AlN film or the top electrode increases the resonance frequency. This suggests the potential of tuning the performance of the FBAR device by carefully controlling AlN film thickness. Besides, increasing either the thickness of the AlN film or higher RF power has improved a stronger c-axis orientation and tended to promote a narrower rocking curve full-width at half-maximum (FWHM), but increased both the grain size and the surface roughness. An FBAR device fabricated un- der optimal AlN deposition parameters has demonstrated the effective electromechanical coupling co- efficient (k2eff) and the quality factor (Qfx) are about

  3. Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

    Science.gov (United States)

    Kumagai, Yoshinao; Enatsu, Yuuki; Ishizuki, Masanari; Kubota, Yuki; Tajima, Jumpei; Nagashima, Toru; Murakami, Hisashi; Takada, Kazuya; Koukitu, Akinori

    2010-09-01

    Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50-200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H 2 and NH 3, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10 8 cm -2.

  4. In Situ Fabrication of AlN Coating by Reactive Plasma Spraying of Al/AlN Powder

    Directory of Open Access Journals (Sweden)

    Mohammed Shahien

    2011-10-01

    Full Text Available Reactive plasma spraying is a promising technology for the in situ formation of aluminum nitride (AlN coatings. Recently, it became possible to fabricate cubic-AlN-(c-AlN based coatings through reactive plasma spraying of Al powder in an ambient atmosphere. However, it was difficult to fabricate a coating with high AlN content and suitable thickness due to the coalescence of the Al particles. In this study, the influence of using AlN additive (h-AlN to increase the AlN content of the coating and improve the reaction process was investigated. The simple mixing of Al and AlN powders was not suitable for fabricating AlN coatings through reactive plasma spraying. However, it was possible to prepare a homogenously mixed, agglomerated and dispersed Al/AlN mixture (which enabled in-flight interaction between the powder and the surrounding plasma by wet-mixing in a planetary mill. Increasing the AlN content in the mixture prevented coalescence and increased the nitride content gradually. Using 30 to 40 wt% AlN was sufficient to fabricate a thick (more than 200 µm AlN coating with high hardness (approximately 1000 Hv. The AlN additive prevented the coalescence of Al metal and enhanced post-deposition nitriding through N2 plasma irradiation by allowing the nitriding species in the plasma to impinge on a larger Al surface area. Using AlN as a feedstock additive was found to be a suitable method for fabricating AlN coatings by reactive plasma spraying. Moreover, the fabricated coatings consist of hexagonal (h-AlN, c-AlN (rock-salt and zinc-blend phases and certain oxides: aluminum oxynitride (Al5O6N, cubic sphalerite Al23O27N5 (ALON and Al2O3. The zinc-blend c-AlN and ALON phases were attributed to the transformation of the h-AlN feedstock during the reactive plasma spraying. Thus, the zinc-blend c

  5. Influence of thickness on strain state and surface morphology of AlN grown by HVPE

    Science.gov (United States)

    Maosong, Sun; Jicai, Zhang; Jun, Huang; Xuewei, Li; Linjun, Wang; Xuehua, Liu; Jianfeng, Wang; Ke, Xu

    2016-12-01

    AlN thick films were grown on c-plane sapphire substrates by hydride vapor phase epitaxy at high temperature. The evolution of the strain state and crystal quality of AlN with increase of thickness were investigated by transmission electron microscopy, field-emission scanning electron microscopy, Raman spectra and atomic force microscopy (AFM). As the thickness increased, the stress in the epilayers decreased gradually, which was attributed to the reaction of dislocations at the first several microns in thickness. When the thickness was more than 20 μm, the stress was almost fully relaxed due to the formation of cracks. Wet etching experiments indicated that the dislocation density decreased with the increase of thickness. The AFM images showed that the density of dark spots on the surface obviously decreased and the atomic steps became straight as the thickness increased. Project supported by the National Basic Research Program of China (No. 2012CB619305), the National Natural Science Foundation of China (Nos. 61274127, 61474133, 61325022), and the CAS Project of Introduction of Outstanding Technical Talent.

  6. Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, H. [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Dai, J.N., E-mail: daijiangnan@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Hui, Xiong; Fang, Y.Y.; Tian, W.; Fu, D.X. [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, C.Q., E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Li, Mingkai; He, Yunbin [Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Faculty of Materials Science and Engineering, Hubei University, Wuhan 430062 (China)

    2013-03-25

    Highlights: ► High-quality c-plane ZnO films can be achieved by PLD. ► The rocking curve with FWHM of 0.09° by using 150 nm-thickness AlN/c-sapphire template. ► The properties of ZnO films were studied by AFM, XRD, PL and Raman measurements. ► We report on the fabrication of ZnO films with different thicknesses of AlN buffer layers. -- Abstract: In this work, ZnO films with high crystal quality were grown by pulsed laser deposition (PLD) on different c-plane AlN/c-sapphire template thereby the thicknesses of AlN buffer layers varied from 150 to 300 nm. The properties of ZnO thin films were studied by using high-resolution X-ray diffraction, atomic force microscopy, photoluminescence spectroscopy, and Raman measurement. The comparative investigation results show that inserting an AlN buffer layer is an effective way to improve the crystal quality of ZnO films. Furthermore, the thickness of the AlN buffer layer plays an important role on the quality of ZnO films. The result of (0 0 0 2) ω-rocking curve with the full width at half maximum (FWHM) of 0.09° indicates that high-quality c-plane ZnO films can be achieved by using a 150 nm-thickness AlN/c-sapphire template. In the best knowledge of the authors, this is the minimum value reported at present for ZnO films grown on AlN/c-sapphire templates by PLD.

  7. Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

    Institute of Scientific and Technical Information of China (English)

    LIN Guo-Qiang; ZENG Yi-Ping; WANG Xiao-Liang; LIU Hong-Xin

    2008-01-01

    Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy(GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72nm. When the thickness of AlN buffer is 36nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72nm.

  8. Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films

    Institute of Scientific and Technical Information of China (English)

    GU Hao-Shuang; ZHANG Kai; HU Guang; LI Wei-Yong

    2006-01-01

    @@ Thin film bulk acoustic resonators are fabricated by using silicon bulk micromachining technology, which are constructed mainly from aluminium nitride (AlN) piezoelectric films. The results of x-ray diffraction, scanning electron microscopy and atomic force microscopy show that the AlN films exhibit highly c-axis orientation with good surface morphology. The resonators with the AlN films possessed a reflection coefficient -10.6 dB at the resonant frequency 2.537 GHz, an effective electromechanical coupling coefficient 3.75%, series quality 101.8, and parallel quality 79.7.

  9. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    Science.gov (United States)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  10. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    Directory of Open Access Journals (Sweden)

    Takeshi Aoki

    2015-08-01

    Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  11. Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    Liu Bo; Zhang Sen; Yin Jia-Yun; Zhang Xiong-Wen; Dun Shao-Bo; Feng Zhi-Hong; Cai Shu-Jun

    2013-01-01

    The effect of an initially grown high-temperature AlN buffer (HT-AlN) layer's thickness on the quality of an AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) in a two-step growth process is investigated.The characteristics of AIN epilayers are analyzed by using triple-axis crystal X-ray diffraction (XRD) and atomic force microscopy (AFM).It is shown that the crystal quality of the AlN epilayer is closely related to its correlation length.The correlation length is determined by the thickness of the initially grown HT-AIN buffer layer.We find that the optimal HT-AlN buffer thickness for obtaining a high-quality AlN epilayer grown on sapphire substrate is about 20 nm.

  12. Preparation of graphite and graphene thick film on AlN substrate

    Science.gov (United States)

    Gao, Saijie; Shen, Yue; Gu, Feng; Xu, Mengjie; Wu, Xiafan; Xu, Jindong

    2013-12-01

    High-purity AlN ceramic substrate was prepared by conventional sintering in N2 atmosphere at 1710°C for 3 hours. Measurement results of SEM, X-ray Diffraction (XRD) indicated that the AlN substrate was sintered completely, average particle size is about 1-3 μm and the porosity is very low. Graphite and graphene electrodes were obtained by simple doctor-blade coating method on AlN substrate. The samples were investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscope (SEM). Sheet resistance is measured by the four-probe method. Annealing at H2 reduction atmosphere can slow down graphitized trend of graphene and protect it's structure. The graphite electrode was applied in typical sandwich-structure DSSCs with ZnO as photoanodes, and the photoelectric conversion efficiency (η) was about 0.78%, which can be optimized and applied in DSSCs by process optimization.

  13. Fabrication and Dielectric Properties of AlN Filled Epoxy Nano-composites

    Energy Technology Data Exchange (ETDEWEB)

    Gao Naiui; Yu Xin; Jin Haiyun; He Bo; Dong Pu [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an, 710049 (China); Gao Chao, E-mail: hyjin@mail.xjtu.edu.cn

    2011-10-29

    Epoxy resins were materials with excellent mechanical, electrical properties and good chemical stability. Thus, they had been used in various fields, especially in electrical and electronic application. However, because they were brittle material, the fields of application were limited. Adding nano-Aluminum Nitride (AlN) into Epoxy resins could improve the toughness of the composites, the thermal behaviors of composites could also be improved, but the influence on dielectric properties was not very clear. In this research, epoxy resin based composites were fabricated. The relationships between the dielectric properties and the nano-AlN particle content were investigated. The results showed that, both relative permittivity ({epsilon}{sub r}) and dielectric loss tangent (tan{delta}) decreased to be less than that of monolithic epoxy when nano-AlN particle content was no more than certain amount, the DC volume resistivity ({rho}{sub v}) and low frequency resistivity decreased with increasing nano-AlN content (in certain range of content). AC breakdown strength (E{sub B}) did not have an obvious tendency with nano-AlN content.

  14. Fabrication of AlN thin films on different substrates at ambient temperature

    CERN Document Server

    Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

    2002-01-01

    Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

  15. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhou, Shizhong; Lin, Zhiting [State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641 (China); Li, Guoqiang, E-mail: msgli@scut.edu.cn [State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510641 (China); Department of Electronic Materials, South China University of Technology, Guangzhou 510641 (China)

    2015-05-14

    AlN films with various thicknesses have been grown on Si(111) substrates by pulsed laser deposition (PLD). The surface morphology and structural property of the as-grown AlN films have been investigated carefully to comprehensively explore the epitaxial behavior. The ∼2 nm-thick AlN film initially grown on Si substrate exhibits an atomically flat surface with a root-mean-square surface roughness of 0.23 nm. As the thickness increases, AlN grains gradually grow larger, causing a relatively rough surface. The surface morphology of ∼120 nm-thick AlN film indicates that AlN islands coalesce together and eventually form AlN layers. The decreasing growth rate from 240 to 180 nm/h is a direct evidence that the growth mode of AlN films grown on Si substrates by PLD changes from the islands growth to the layer growth. The evolution of AlN films throughout the growth is studied deeply, and its corresponding growth mechanism is hence proposed. These results are instructional for the growth of high-quality nitride films on Si substrates by PLD, and of great interest for the fabrication of AlN-based devices.

  16. Synthesis and characterization of 10 nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices

    Science.gov (United States)

    Zaghloul, Usama; Piazza, Gianluca

    2014-06-01

    The scaling of piezoelectric nanoelectromechanical systems (NEMS) is challenged by the synthesis of ultrathin and high quality piezoelectric films on very thin electrodes. We report the synthesis and characterization of the thinnest piezoelectric aluminum nitride (AlN) films (10 nm) ever deposited on ultrathin platinum layers (2-5 nm) using reactive sputtering. X-ray diffraction, high-resolution transmission electron microscopy, and fast Fourier transform analyses confirmed the proper crystal orientation, fine columnar texture, and the continuous lattice structure within individual grains in the deposited AlN nanometer thick films. The average extracted d31 piezoelectric coefficient for the synthesized films is -1.73 pC/N, which is comparable to the reported values for micron thick and highly c-axis oriented AlN films. The 10 nm AlN films were employed to demonstrate two different types of optimized piezoelectric nanoactuators. The unimorph actuators exhibit vertical displacements as large as 1.1 μm at 0.7 V for 25 μm long and 30 nm thick beams. These results have a great potential to realize miniaturized NEMS relays with extremely low voltage, high frequency resonators, and ultrasensitive sensors.

  17. Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films

    Directory of Open Access Journals (Sweden)

    Ali Tariq

    2009-01-01

    Full Text Available Abstract Samarium (Sm doped aluminum nitride (AlN thin films are deposited on silicon (100 substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100–200 watts RF power and 5–8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of4G5/2 → 6H5/2,4G5/2 → 6H7/2,4G5/2 → 6H9/2, and4G5/2 → 6H11/2transitions. Photoluminescence (PL provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.

  18. Thick film fabrication of aluminum nitride microcircuits. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Perdieu, L.H.

    1994-03-01

    A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

  19. Thickness Effect of Micro Speaker Copper Coil Fabrication Process

    Directory of Open Access Journals (Sweden)

    F. L. AYAT

    2011-07-01

    Full Text Available This paper present the advantage of using electroplating for making the thick layer of copper over the sputtering. The purpose of this paper is to fabricate the copper coil for microspeaker. The design and simulation of this copper coil shows that the 15 um thickness is needed. In order to fabricate this coil, copper plating is used. The electro-deposition process is well suited to make films of metals such as copper, gold and nickel. The films can be made in any thickness from ~1 µm to >100 µm. The deposition is best controlled when used with an external electrical potentiostate. However, it requires electrical contact to the substrate when immersed in the liquid bath. In any process, the surface of the substrate must have an electrically conducting coating before the deposition can be done. The result of this experimental research shows the easy and cheap way to fabricate the thick layer of copper for microspeacker fabrication.

  20. Microstructure and Properties of AlN Coating/Graphite Fabricated via In-situ Reaction

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A novel method was used to fabricate AIN coating on graphite substrate. This approach included two steps: firstly, the emulsion composed of BN and anhydrous ethanol was sprayed on the surface of the graphite substrate; secondly, AIN coating was formed through the in-situ reaction of Al with the sprayed BN. The reaction was investigated by thermogravimetric-differential thermal analysis (TG-DTA), and the phase composition in the synthetic process was characterized by X-ray diffraction (XRD). Scanning electronic microscopy (SEM) was used to observe the morphology, and electron probe microanalysis (EPMA) was used to observe the distribution of the elements. The experimental results show that the AIN coating is dense and bonded with graphite tightly.

  1. Fabrication of BIT thick films patterned by proton beam writing

    Science.gov (United States)

    Yamaguchi, Masaki; Watanabe, Kazuki; Nishikawa, Hiroyuki; Masuda, Yoichiro

    2017-07-01

    In this study, we fabricated thick films with polyvinylpyrrolidone (PVP) added to bismuth titanate (Bi4Ti3O12) to form a lead-free ferroelectric material. We examined the direct patterning of these materials by using proton-beam irradiation. When 50% PVP was added to the organic source solution, the c-axis orientation was promoted and cracks were suppressed due to stress relaxation. In addition, a dot and an arbitrary-shape micro-pattern were formed on bismuth-titanate thick film by micromachining using a proton beam.

  2. Economical Fabrication of Thick-Section Ceramic Matrix Composites

    Science.gov (United States)

    Babcock, Jason; Ramachandran, Gautham; Williams, Brian; Benander, Robert

    2010-01-01

    A method was developed for producing thick-section [>2 in. (approx.5 cm)], continuous fiber-reinforced ceramic matrix composites (CMCs). Ultramet-modified fiber interface coating and melt infiltration processing, developed previously for thin-section components, were used for the fabrication of CMCs that were an order of magnitude greater in thickness [up to 2.5 in. (approx.6.4 cm)]. Melt processing first involves infiltration of a fiber preform with the desired interface coating, and then with carbon to partially densify the preform. A molten refractory metal is then infiltrated and reacts with the excess carbon to form the carbide matrix without damaging the fiber reinforcement. Infiltration occurs from the inside out as the molten metal fills virtually all the available void space. Densification to 41 ksi (approx. 283 MPa) flexural strength.

  3. Optimization of Thick Negative Photoresist for Fabrication of Interdigitated Capacitor Structures

    Science.gov (United States)

    2015-04-01

    ARL-TR-7258 ● APR 2015 US Army Research Laboratory Optimization of Thick Negative Photoresist for Fabrication of Interdigitated ...TR-7258 ● APR 2015 US Army Research Laboratory Optimization of Thick Negative Photoresist for Fabrication of Interdigitated Capacitor...of Thick Negative Photoresist for Fabrication of Interdigitated Capacitor Structures 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  4. Electrical characteristics of AlO sub x N sub y prepared by oxidation of sub-10-nm-thick AlN films for MOS gate dielectric applications

    CERN Document Server

    Jeon, S H; Kim, H S; Noh, D Y; Hwang, H S

    2000-01-01

    In this research, the feasibility of ultrathin AlO sub x N sub y prepared by oxidation of sub 100-A-thick AlN thin films for metal-oxide-semiconductor (MOS) gate dielectric applications was investigated. Oxidation of 51-A-and 98-A-thick as-deposited AlN at 800 .deg. C was used to form 72-A-and 130-A-thick AlO sub x N sub y , respectively. Based on the capacitance-voltage (C-V) measurements of the MOS capacitor, the dielectric constants of 72 A-thick and 130 A-thick Al-oxynitride were 5.15 and 7, respectively. The leakage current of Al-oxynitride at low field was almost the same as that of thermal SiO sub 2. based on the CV data, the interface state density of Al-oxynitride was relatively higher than that of SiO sub 2. Although process optimization is still necessary, the Al-oxynitride exhibits some possibility for future MOS gate dielectric applications.

  5. Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

    Science.gov (United States)

    Fukuyama, Hiroyuki; Miyake, Hideto; Nishio, Gou; Suzuki, Shuhei; Hiramatsu, Kazumasa

    2016-05-01

    The N2-CO gas annealing technique was demonstrated to improve the crystalline quality of the AlN layer on sapphire. 300-nm-thick AlN layers were fabricated on sapphire substrates by a metal-organic vapor phase epitaxy method. The AlN layers were annealed in N2 and/or N2-CO gas atmosphere at 1923-1973 K for 0.5-4 h. Many pits and voids were observed on the AlN surface annealed in N2 atmosphere at 1973 K for 2 h. The rough surface was, however, much improved for the AlN annealed in N2-CO gas atmosphere. The thermodynamic principle of the N2-CO gas annealing technique is explained in this paper on the basis of the phase stability diagram of the Al2O3-AlN-C-N2-CO system. Voids and γ-aluminum oxynitride (γ-AlON) at the AlN/sapphire interface formed during the annealing, which is also explained on the basis of the phase stability diagram. The in-plane epitaxial relationships among AlN, γ-AlON, and sapphire are presented, and misfits among them are discussed.

  6. Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H{sub 2}/N{sub 2} plasma

    Energy Technology Data Exchange (ETDEWEB)

    Goerke, Sebastian, E-mail: sebastian.goerke@ipht-jena.de [Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena (Germany); Ziegler, Mario; Ihring, Andreas; Dellith, Jan [Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena (Germany); Undisz, Andreas [Otto Schott Institute of Materials Research, Friedrich-Schiller-University, Löbdergraben 32, 07743 Jena (Germany); Diegel, Marco; Anders, Solveig; Huebner, Uwe [Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena (Germany); Rettenmayr, Markus [Otto Schott Institute of Materials Research, Friedrich-Schiller-University, Löbdergraben 32, 07743 Jena (Germany); Meyer, Hans-Georg [Leibniz Institute of Photonic Technology (IPHT), Albert-Einstein-Str. 9, 07745 Jena (Germany)

    2015-05-30

    Highlights: • AlN films grown at 150 °C by ALD using trimethylaluminum and H{sub 2}/N{sub 2}-plasma. • Nearly stoichiometric AlN films (ratio Al:N = 0.938), polycrystalline by XRD/TEM. • Refractive index of n = 1.908 and low thermal conductivity of κ = 1.66 W/(m K). • Free-standing AlN membranes mechanically stable and buckling free (tensile strain). • Membrane patterning by focused ion beam etching possible. - Abstract: Aluminum nitride (AlN) thin films with thicknesses from 20 to 100 nm were deposited on silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic layer deposition (PE-ALD). Trimethylaluminum (TMA) and a H{sub 2}/N{sub 2} plasma mixture were used as precursors. We investigated the influence of deposition temperature and plasma parameters on the growth characteristics and the film properties of AlN. Stable PE-ALD growth conditions were obtained from 150 °C to the highest tested temperature of 300 °C. The growth rate, refractive index, and thickness homogeneity on 4″ wafers were determined by spectroscopic ellipsometry. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) were carried out to analyze crystallinity and composition of the films. Furthermore, the thermal conductivity and the film stress were determined. The stress was sufficiently low to fabricate mechanically stable free-standing AlN membranes with lateral dimensions of up to 2.2 × 2.2 mm{sup 2}. The membranes were patterned with focused ion beam etching. Thus, these AlN membranes qualify as dielectric support material for a variety of potential applications.

  7. Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

    Science.gov (United States)

    Goerke, Sebastian; Ziegler, Mario; Ihring, Andreas; Dellith, Jan; Undisz, Andreas; Diegel, Marco; Anders, Solveig; Huebner, Uwe; Rettenmayr, Markus; Meyer, Hans-Georg

    2015-05-01

    Aluminum nitride (AlN) thin films with thicknesses from 20 to 100 nm were deposited on silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic layer deposition (PE-ALD). Trimethylaluminum (TMA) and a H2/N2 plasma mixture were used as precursors. We investigated the influence of deposition temperature and plasma parameters on the growth characteristics and the film properties of AlN. Stable PE-ALD growth conditions were obtained from 150 °C to the highest tested temperature of 300 °C. The growth rate, refractive index, and thickness homogeneity on 4″ wafers were determined by spectroscopic ellipsometry. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) were carried out to analyze crystallinity and composition of the films. Furthermore, the thermal conductivity and the film stress were determined. The stress was sufficiently low to fabricate mechanically stable free-standing AlN membranes with lateral dimensions of up to 2.2 × 2.2 mm2. The membranes were patterned with focused ion beam etching. Thus, these AlN membranes qualify as dielectric support material for a variety of potential applications.

  8. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition

    Science.gov (United States)

    Altuntas, Halit; Bayrak, Turkan

    2017-03-01

    In this work, we aimed to investigate the effects of two different plasma sources on the electrical properties of low-temperature plasma-assisted atomic layer deposited (PA-ALD) AlN thin films. To compare the electrical properties, 50 nm thick AlN films were grown on p-type Si substrates at 200 °C by using an inductively coupled RF-plasma (ICP) and a stainless steel hollow cathode plasma-assisted (HCPA) ALD systems. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor devices were fabricated and capacitance versus voltage ( C- V) and current-voltage ( I- V) measurements performed to assess the basic important electrical parameters such as dielectric constant, effective charge density, flat-band voltage, breakdown field, and threshold voltage. In addition, structural properties of the films were presented and compared. The results show that although HCPA-ALD deposited AlN thin films has structurally better and has a lower effective charge density ( N eff ) value than ICP-ALD deposited AlN films, those films have large leakage current, low dielectric constant, and low breakdown field. This situation was attributed to the involvement of Si atoms into the AlN layers during the HCPA-ALD processing leads to additional current path at AlN/Si interface and might impair the electrical properties.

  9. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition

    Science.gov (United States)

    Altuntas, Halit; Bayrak, Turkan

    2016-12-01

    In this work, we aimed to investigate the effects of two different plasma sources on the electrical properties of low-temperature plasma-assisted atomic layer deposited (PA-ALD) AlN thin films. To compare the electrical properties, 50 nm thick AlN films were grown on p-type Si substrates at 200 °C by using an inductively coupled RF-plasma (ICP) and a stainless steel hollow cathode plasma-assisted (HCPA) ALD systems. Al/AlN/p-Si metal-insulator-semiconductor (MIS) capacitor devices were fabricated and capacitance versus voltage (C-V) and current-voltage (I-V) measurements performed to assess the basic important electrical parameters such as dielectric constant, effective charge density, flat-band voltage, breakdown field, and threshold voltage. In addition, structural properties of the films were presented and compared. The results show that although HCPA-ALD deposited AlN thin films has structurally better and has a lower effective charge density (N eff ) value than ICP-ALD deposited AlN films, those films have large leakage current, low dielectric constant, and low breakdown field. This situation was attributed to the involvement of Si atoms into the AlN layers during the HCPA-ALD processing leads to additional current path at AlN/Si interface and might impair the electrical properties.

  10. Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

    2015-07-01

    GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

  11. Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

    Energy Technology Data Exchange (ETDEWEB)

    Kyoung Ryu, Yu; Garcia, Ricardo, E-mail: r.garcia@csic.es [Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Aitor Postigo, Pablo; Garcia, Fernando [Instituto de Microelectrónica de Madrid (IMM-CNM-CSIC), 28760 Tres Cantos, Madrid (Spain)

    2014-06-02

    Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained with a top-down lithography method.

  12. Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage...... of bimorph vibration energy harvesters is that strain energy is not lost in mechanical support materials since only Pb(ZrxTi1-x)O3 (PZT) is strained; as a result, the effective system coupling coefficient is increased, and thus a potential for significantly higher output power is released. In addition, when...... the two layers are connected in series, the output voltage is increased, and as a result the relative power loss in the necessary rectifying circuit is reduced. We describe an improved process scheme for the energy harvester, which resulted in a robust fabrication process with a record high fabrication...

  13. Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers

    Science.gov (United States)

    Wu, C. H.; Lee, P. Y.; Chen, K. Y.; Tseng, Y. T.; Wang, Y. L.; Cheng, K. Y.

    2016-11-01

    Selective area growth (SAG) of high-density (2.5×109 cm-2) GaN nanowires (NWs) on Si(111) substrate by plasma-assisted molecular beam epitaxy is presented. The effects of morphology and thickness of the AlN seeding layer on the quality of SAG GaN NWs are investigated. A thin AlN seeding layer of 30 nm thick with a surface roughness of less than 0.5 nm is suitable for high quality SAG GaN NWs growth. High-density AlN nanopedestal arrays used as seeds for SAG GaN NWs are fabricated from thin AlN seeding layers using soft nanoimprint lithography. By adjusting the growth temperature and Ga/N flux ratio, hexagonal shaped SAG GaN NWs are realized. The quality of SAG GaN NWs is evaluated by low temperature photoluminescence (PL) measurements. Three major groups of PL peaks at 3.47, 3.45, and 3.41 eV are identified. The peak at 3.471 eV is related to the neutral donor-bound exciton emission, and the 3.41 eV broadband emission is attributed to stacking faults or structural defects. The 3.45 eV peak is identified as the emission due to exciton recombination at polar inversion domain boundaries of NWs.

  14. Fabrication of Fully Inkjet-Printed Vias and SIW Structures on Thick Polymer Substrates

    KAUST Repository

    Kim, Sangkil

    2016-02-11

    In this paper, a novel fully inkjet-printed via fabrication technology and various inkjet-printed substrate-integrated waveguide (SIW) structures on thick polymer substrates are presented. The electrical properties of polymethyl methacrylate (PMMA) are thoroughly studied up to 8 GHz utilizing the T-resonator method, and inkjet-printable silver nanoparticle ink on PMMA is characterized. A long via fabrication process up to 1 mm utilizing inkjet-printing technology is demonstrated, and its characteristics are presented for the first time. The inkjet-printed vias on 0.8-mm-thick substrate have a resistance of ∼ 0.2~ Ω . An equivalent circuit model of the inkjet-printed stepped vias is also discussed. An inkjet-printed microstrip-to-SIW interconnect and an SIW cavity resonator utilizing the proposed inkjet-printed via fabrication process are also presented. The design of the components and the fabrication steps are discussed, and the measured performances over the microwave frequency range of the prototypes are presented.

  15. Thickness design, fabrication, and evaluation of 100-MHz polyurea ultrasonic transducer.

    Science.gov (United States)

    Nakazawa, Marie; Tabaru, Masaya; Aoyagi, Takahiro; Nakamura, Kentaro; Ueha, Sadayuki

    2013-10-01

    In this paper, we present a polyurea transducer that works at 100 MHz under water. The transducer was designed using an equivalent circuit model so that an aluminum (top)-polyurea-aluminum (bottom)-polyimide layer had a resonant frequency of 100 MHz and output sound pressure became maximum at that frequency. The thicknesses of the top aluminum electrode, polyurea, and bottom aluminum electrode were determined to be 3.3, 3.5, and 1.7 μm, respectively. A 100-MHz polyurea transducer with the designed thickness was fabricated using deposition equipment. To evaluate the performance of the designed and fabricated polyurea transducer, transmission-reception experiments with pulsed and burst waves were carried out. The results show that transmitting and receiving ultrasounds at a frequency of 100 MHz are possible as expected with the thickness design. To evaluate actual use, B-mode imaging of an onion was also performed using the transducer, which was formed into a line-focused shape. The result shows that the outer layer of the onion, of 0.1 to 0.2 mm thickness, was successfully imaged.

  16. Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Robert Koncki

    2006-04-01

    Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

  17. Growth and Characterization of Polyimide-Supported AlN Films for Flexible Surface Acoustic Wave Devices

    Science.gov (United States)

    Li, Qi; Liu, Hongyan; Li, Gen; Zeng, Fei; Pan, Feng; Luo, Jingting; Qian, Lirong

    2016-06-01

    Highly c-axis oriented aluminum nitride (AlN) films, which can be used in flexible surface acoustic wave (SAW) devices, were successfully deposited on polyimide (PI) substrates by direct current reactive magnetron sputtering without heating. The sputtering power, film thickness, and deposition pressure were optimized. The characterization studies show that at the optimized conditions, the deposited AlN films are composed of columnar grains, which penetrate through the entire film thickness (~2 μm) and exhibit an excellent (0002) texture with a full width at half maximum value of the rocking curve equal to 2.96°. The film surface is smooth with a root mean square value of roughness of 3.79 nm. SAW prototype devices with a center frequency of about 520 MHz and a phase velocity of Rayleigh wave of about 4160 m/s were successfully fabricated using the AlN/PI composite structure. The obtained results demonstrate that the highly c-axis oriented AlN films with a smooth surface and low stress can be produced on relatively rough, flexible substrates, and this composite structure can be possibly used in flexible SAW devices.

  18. AlN antiresonant layer ARROW waveguides

    Science.gov (United States)

    Pelegrini, M. V.; Carvalho, D. O.; Alayo, M. I.; Pereyra, I.

    2010-02-01

    Aluminum Nitride (AlN) is a wide band gap III-V semiconductor material often used for optical applications due to its transparency and high refractive index. We have produced and characterized AlN thin films by reactive r.f. magnetron sputtering in different Ar-N2 atmospheres in order to verify the best gaseous concentration to be utilized as anti-resonant layer in ARROW waveguides. The corresponding films were characterized by Fourier transform infrared spectroscopy (FTIR), Rutherford backscattering spectroscopy (RBS), Ellipsometry and visible optical absorption. The AlN properties did not varied significantly between the films deposited with 20 and 70 sccm of N2, most of the variations occurred for films deposited with 18 sccm of N2 or below. The film deposited with 20 sccm was selected to be used as the first ARROW layer in the fabricated waveguides. Two routines were used to design the waveguides parameters, the transfer matrix method (TMM) and the semi-vectorial non-uniform finite difference method (NU-FDM). Attenuation as low as 3.5dB/cm was obtained for a 7 μm wide waveguide.

  19. Investigation of the fabrication parameters of thick film metal oxide-polymer pH electrodes

    CERN Document Server

    Gac, A

    2002-01-01

    This thesis describes a study into the development of an optimum material and fabrication process for the production of thick film pH electrodes. These devices consist of low cost, miniature and rugged pH sensors formed by screen printing a metal oxide bearing paste onto a high temperature (approx 850 deg C) fired metal back contact supported on a standard alumina substrate. The pH sensitive metal oxide layer must be fabricated at relatively low temperatures (<300 deg C) in order to maintain the pH sensitivity of the layer and hence requires the use of a suitably stable low temperature curing binder. Bespoke fabricated inks are derived from a Taguchi style factorial experimental plans in which, different binder types, curing temperatures, hydration level and percentage mixtures of different metal oxides and layer thicknesses were investigated. The pH responses of 18 printed electrodes per batch were assessed in buffer solutions with respect to a commercial reference electrode forming a complete potentiomet...

  20. Research on High Layer Thickness Fabricated of 316L by Selective Laser Melting

    Directory of Open Access Journals (Sweden)

    Shuo Wang

    2017-09-01

    Full Text Available Selective laser melting (SLM is a potential additive manufacturing (AM technology. However, the application of SLM was confined due to low efficiency. To improve efficiency, SLM fabrication with a high layer thickness and fine powder was systematically researched, and the void areas and hollow powders can be reduced by using fine powder. Single-track experiments were used to narrow down process parameter windows. Multi-layer fabrication relative density can be reached 99.99% at the exposure time-point distance-hatch space of 120 μs-40 μm-240 μm. Also, the building rate can be up to 12 mm3/s, which is about 3–10 times higher than the previous studies. Three typical defects were found by studying deeply, including the un-melted defect between the molten pools, the micro-pore defect within the molten pool, and the irregular distribution of the splashing phenomenon. Moreover, the microstructure is mostly equiaxed crystals and a small amount of columnar crystals. The averages of ultimate tensile strength, yield strength, and elongation are 625 MPa, 525 MPa, and 39.9%, respectively. As exposure time increased from 80 μs to 200 μs, the grain size is gradually grown up from 0.98 μm to 2.23 μm, the grain aspect ratio is close to 1, and the tensile properties are shown as a downward trend. The tensile properties of high layer thickness fabricated are not significantly different than those with a coarse-powder layer thickness of low in previous research.

  1. Fabrication and Test of Pixelated CZT Detectors with Different Pixel Pitches and Thicknesses

    CERN Document Server

    Li, Q; Dowkontt, P; Martín, J; Beilicke, M; Jung, I; Groza, M; Bürger, A; De Geronimo, G; Krawczynski, H

    2008-01-01

    The main methods grown Cadmium Zinc Telluride (CZT) crystals with high yield and excellent homogeneity are Modified Horizontal Bridgman (MHB) and High Pressure Bridgman (HPB) processes, respectively. In this contribution, the readout system based on two 32-channel NCI-ASICs for pixellated CZT detector arrays has been developed and tested. The CZT detectors supplied by Orbotech (MHB) and eV products (HPB) are tested by NCI-ASIC readout system. The CZT detectors have an array of 8x8 or 11x11 pixel anodes fabricated on the anode surface with the area up to 2 cm x2 cm and the thickness of CZT detectors ranges from 0.5 cm to 1 cm. Energy spectra resolution and electron mobility-lifetime products of 8x8 pixels CZT detector with different thicknesses have been investigated.

  2. High-aspect-ratio photoresist processing for fabrication of high resolution and thick micro-windings

    Science.gov (United States)

    Anthony, Ricky; Laforge, Elias; Casey, Declan P.; Rohan, James F.; O'Mathuna, Cian

    2016-10-01

    DC winding losses remain a major roadblock in realizing high efficiency micro-magnetic components (inductors/transformers). This paper reports an optimized photoresist process using negative tone and acrylic based THB-151N (from JSR Micro), to achieve one of the highest aspect ratio (17:1) and resolution (~5 µm) resist patterns for fabrication of thick (~80 µm) micro-winding using UV lithography. The process was optimized to achieve photoresist widths from 5 µm to 20 µm with resist thickness of ~85 µm in a single spin step. Unlike SU-8, this resist can be readily removed and shows a near-vertical (~91°) electroplated Cu side-wall profile. Moreover, the high resolution compared to available resist processes enables a further reduction in the footprint area and can potentially increase the number of winding thereby increasing the inductance density for micro-magnetic components. Resistance measurements of electroplated copper winding of air-core micro-inductors within the standard 0402 size (0.45 mm2 footprint area) suggested a 42% decrease in resistance (273 mΩ-159 mΩ) with the increase in electroplated Cu thickness (from 50 µm to 80 µm). Reduction of the spacings (from 10 µm to 5 µm) enabled further miniaturisation of the device footprint area (from 0.60 mm2 to 0.45 mm2) without significant increase in resistance.

  3. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

    Science.gov (United States)

    Miyake, Hideto; Lin, Chia-Hung; Tokoro, Kenta; Hiramatsu, Kazumasa

    2016-12-01

    The annealing of sputtered AlN films with different thicknesses grown on sapphire in nitrogen ambient was investigated. In the annealing, two AlN films on sapphire were overlapped "face-to-face" to suppress the thermal decomposition of the AlN films. The sputtered AlN films with small grains consisted of columnar structure were initially aligned with (0002) orientation but became slightly inclined with increasing film thickness resulting in the formation of a two-layer structure. After annealing, films became a single crystalline layer regardless of the film thickness, and their crystallinity markedly improved after annealing at 1600-1700 °C. The full widths at half maximum of the (0002)- and (10 1 bar2)-plane X-ray rocking curves were improved to 49 and 287 arcsec, respectively, owing to the annihilation of domain boundaries in the sputtered AlN films, which concurrently increased the compressive stress in the films.

  4. GHz spurious mode free AlN lamb wave resonator with high figure of merit using one dimensional phononic crystal tethers

    Science.gov (United States)

    Wu, Guoqiang; Zhu, Yao; Merugu, Srinivas; Wang, Nan; Sun, Chengliang; Gu, Yuandong

    2016-07-01

    This letter reports a spurious mode free GHz aluminum nitride (AlN) lamb wave resonator (LWR) towards high figure of merit (FOM). One dimensional gourd-shape phononic crystal (PnC) tether with large phononic bandgaps is employed to reduce the acoustic energy dissipation into the substrate. The periodic PnC tethers are based on a 1 μm-thick AlN layer with 0.26 μm-thick Mo layer on top. A clean spectrum over a wide frequency range is obtained from the measurement, which indicates a wide-band suppression of spurious modes. Experimental results demonstrate that the fabricated AlN LWR has an insertion loss of 5.2 dB and a loaded quality factor (Q) of 1893 at 1.02 GHz measured in air. An impressive ratio of the resistance at parallel resonance (Rp) to the resistance at series resonance (Rs) of 49.8 dB is obtained, which is an indication of high FOM for LWR. The high Rp to Rs ratio is one of the most important parameters to design a radio frequency filter with steep roll-off.

  5. Bamboo Fabric: A Study of Using Thick Bamboo Fiber for Producing and Developing Thai Textiles

    Directory of Open Access Journals (Sweden)

    Sisika Wannajun

    2011-01-01

    them. (2 In terms of current situations and the difficulties of Thai textile production, it reveals that an economic and a political change at both local and international levels is the indirect factor but the direct factor which affects Thai textile production is the pollutants resulted from all processes of a supply chain such as a process of fiber production, a process of fiber spinning, a process of fiber weaving, a process of fabric dyeing, a process of fabric completion and a process of making clothes for wearing or decorating. (3 In terms of the use of thick bamboo fiber for producing and developing Thai textiles, it revealed that using thick bamboo fiber gave us a lot of benefits; for example reducing pollutants were harmful to environment, reducing the importation of weaving materials and encouraging economic and income growth of community. Conclusion/Recommendation: The persons involved should apply these research results to develop their textile production and to search for the ways to use thick bamboo fiber for other advanced purposes.

  6. The Effect of Deposition Time on Textured Magnesium Diboride Thick Films Fabricated by Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    W. G. Mutia

    2004-12-01

    Full Text Available MgB2 powders suspended in ethanol were electrophoretically deposited on high-purity molybdenum substrates having dimensions of 1 x 0.3 x 0.01 cm. The said substrate was set as the cathode and was placed 0.5 cm away from a graphite rod anode. A current density of ~0.02 mA/cm2 and a voltage of 600 V were applied. The effect of deposition time was studied by varying it as follows: 15 s, 30 s, 1 min, and 2 min. Heat treatment at 950 oC for 3 h was done after deposition. MgB2 thick films were successfully fabricated for the deposition carried out for 2 min. Deposition times less than 2 min resulted in insufficient deposited powder; hence formation of MgB2 was not facilitated. Films deposited at 15 and 30 s have good surface characteristics, wherein no microcracks were present. X-ray diffraction and surface image analysis reveal that the deposited films have a preferred orientation along the (10l direction.

  7. Energy harvesting using piezoelectric thick films fabricated by a sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Shih, J.L. [McGill Univ., Montreal, PQ (Canada). Dept. of Electrical and Computer Engineering; Kobayashi, M.; Moisan, J.F.; Jen, C.K. [National Research Council of Canada, Boucherville, PQ (Canada). Industrial Materials Inst.

    2008-07-01

    Energy harvesting has been touted as a promising technology to power wireless devices. One of the common energies to be harvested is induced by mechanical vibrations. Piezoelectric materials are often used to get such energy. This study focused on a vibration-based energy harvesting device. Very flexible vibrators using lead-zirconate-titanate (PZT) ceramics were needed. Therefore, a sol-gel spray technology was used to fabricate PZT thick film directly onto metal membranes to serve as mechanical vibrators. The sol-gel process is an economical approach with excellent mass production appeal for both unimorph and bimorph sensors. For this study, the density of the PZT film was less than 85 per cent of the bulk PZT. Using a 20 mm diameter unimorph, the voltage generated from a 5 mm deflection displacement was 13.6 volts peak-to-peak at 10 Hz. With a load resistance of 150 K ohms, the measured average power generated by this sensor was estimated to be 41 {mu}W. A vibration test that lasted for 60 days with a frequency of 10 Hz and at a displacement of approximately 1 mm showed that the sensor is both durable and rugged. 14 refs., 7 figs.

  8. Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting.

    Science.gov (United States)

    Qin, Lifeng; Sun, Yingying; Wang, Qing-Ming; Zhong, Youliang; Ou, Ming; Jiang, Zhishui; Tian, Wei

    2012-12-01

    In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tape-casting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ε(T)(33)/ε(0) measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e(33) in the range of 15 to 26 C/m(2), piezoelectric strain constants (d(31)) in the range of -169 × 10(-12) C/N to -314 × 10(-12) C/N, electromechanical coupling coefficients (k(t)) in the range of 0.48 to 0.53, and k(31) in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.

  9. Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors

    Science.gov (United States)

    Banal, Ryan G.; Imura, Masataka; Liu, Jiangwei; Koide, Yasuo

    2016-09-01

    Significant improvements in electrical properties are achieved from AlN/Al2O3 stack gate H-terminated diamond metal-insulator-semiconductor field-effect transistors (MISFETs) upon improving the structural quality of an AlN insulating layer. The 5-nm-thick Al2O3 layer and 175-nm-thick AlN film are successively deposited by atomic layer deposition and sputter deposition techniques, respectively, on a (100) H-diamond epitaxial layer substrate. The AlN layer exhibits a poly-crystalline structure with the hexagonal wurtzite phase. The crystallite growth proceeds along the c-axis direction and perpendicular to the substrate surface, resulting in a columnar grain structure with an average grain size of around ˜40 nm. The MIS diode fabricated provides a leak current density as low as ˜10-5 A/cm2 at gate voltage bias in the range of -8 V and +4 V. The MISFET fabricated shows normally off enhancement mode transfer characteristic. The drain-source current maximum, threshold voltage, and maximum extrinsic conductance of the FET with 4 μm gate length are -8.89 mA/mm, -0.22 V, and 6.83 mS/mm, respectively.

  10. Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT

    Science.gov (United States)

    Jena, Kanjalochan; Swain, Raghunandan; Lenka, T. R.

    2016-04-01

    In this work, a detailed investigation of the impact of spacer layer thickness on analog performance of an AlInN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) is carried out. A thorough analysis of the key figure-of-merits such as threshold voltage (V th), two-dimensional electron gas sheet charge density (n s), drain current (I d), transconductance (g m), and gate leakage current are performed for various spacer thicknesses ranging from 0.5 nm to 1.8 nm. From the two-dimensional ATLAS device simulation results, it is observed that the performance of AlInN/AlN/GaN MOSHEMT is affected by the variation of spacer thickness. Also, we have developed mathematical expressions for the evaluation of V th , n s , I d , g m and gate leakage current for the proposed device. The model results and technology computer-aided design simulation results are verified and also found to be satisfactory. Improved sheet charge density and superior analog performance is observed due to the insertion of the AlN spacer. Suppression in the forward gate current is observed due to the insertion of the AlN spacer which made it possible to apply a high gate voltage in the transistor operation. From the fabrication point of view, it is also feasible to utilize the existing complementary metal-oxide-semiconductor process flows to fabricate the proposed device.

  11. Enhancing the piezoelectric properties of flexible hybrid AlN materials using semi-crystalline parylene

    Science.gov (United States)

    Jackson, Nathan; Mathewson, Alan

    2017-04-01

    Flexible piezoelectric materials are desired for numerous applications including biomedical, wearable, and flexible electronics. However, most flexible piezoelectric materials are not compatible with CMOS fabrication technology, which is desired for most MEMS applications. This paper reports on the development of a hybrid flexible piezoelectric material consisting of aluminium nitride (AlN) and a semi-crystalline polymer substrate. Various types of semi-crystalline parylene and polyimide materials were investigated as the polymer substrate. The crystallinity and surfaces of the polymer substrates were modified by micro-roughening and annealing in order to determine the effects on the AlN quality. The AlN crystallinity and piezoelectric properties decreased when the polymer surfaces were treated with O2 plasma. However, increasing the crystallinity of the parylene substrate prior to deposition of AlN caused enhanced c-axis (002) AlN crystallinity and piezoelectric response of the AlN. Piezoelectric properties of 200 °C annealed parylene-N substrate resulted in an AlN d 33 value of 4.87 pm V-1 compared to 2.17 pm V-1 for AlN on polyimide and 4.0 pm V-1 for unannealed AlN/parylene-N. The electrical response measurements to an applied force demonstrated that the parylene/AlN hybrid material had higher V pp (0.918 V) than commercial flexible piezoelectric material (PVDF) (V pp 0.36 V). The results in this paper demonstrate that the piezoelectric properties of a flexible AlN hybrid material can be enhanced by increasing the crystallinity of the polymer substrate, and the enhanced properties can function better than previous flexible piezoelectrics.

  12. Activating Mg acceptors in AlN by oxygen: first principles calculations

    CERN Document Server

    Wu, R Q

    2007-01-01

    First principles calculations based on density functional theory (DFT) are performed to study the electronic properties of Mg acceptors in AlN at the presence of oxygen. It is found that Mg and O tend to form complexes like Mg-O, Mg$_2$-O, Mg$_3$-O and Mg$_4$-O which have activation energies about 0.23 eV lower than that of Mg (except of the passive Mg-O). The lower activation energies originate from the extra states over valence band top of AlN induced by the passive Mg-O. By comparing to the well-established case of GaN, it is possible to fabricate Mg and O codoped AlN without MgO precipitate. These results suggest the possibility of achieving higher hole concentration in AlN by Mg and O codoping.

  13. Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (1 1 1) substrates

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Lin, Yunhao; Zhou, Shizhong; Qian, Huirong; Gao, Fangliang; Yang, Hui; Li, Guoqiang

    2014-03-01

    The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (1 1 1) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (1 1 1) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (1 1 1) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within ∼321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes.

  14. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347 (United States); Gougousi, Theodosia [Physics Department, University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States); Evans, Keith R. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

    2014-09-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm{sup 2}/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  15. Coating thickness control in continuously fabricating metallic glass-coated composite wires

    Science.gov (United States)

    Zhang, Bao-yu; Chen, Xiao-hua; Lu, Zhao-ping; Hui, Xi-dong

    2013-05-01

    A continuous production process was developed for coating bulk metallic glasses on the metallic wire surface. The effects of processing parameters, including the drawing velocity and coating temperature, on the coating thickness were investigated. It is found that the coating thickness increases with the increase in drawing velocity but decreases with the increase in coating temperature. A fluid mechanical model was developed to quantify the coating thickness under various processing conditions. By using this theoretical model, the coating thickness was calculated, and the calculated values are in good agreement with the experimental data.

  16. Fabrication of tunnel junctions on thick X-ray absorbing substrates of Nb and Ta

    NARCIS (Netherlands)

    Hamster, A.W.; Ferrari, E.; Adelerhof, D.J.; Brons, G.C.S.; Schoofs, I.J.E.; Flokstra, J.; Rogalla, H.; Bruijn, M.P.; Kiewiet, F.; Luiten, O.J.; Korte, de P.A.J.

    1996-01-01

    X-ray detectors based on absorber-junction combinations can combine a large detector area with position resolution and good energy resolution. We plan to use a thick, single crystal Nb or Ta absorber with readout tunnel junctions integrated on top as our next generation X-ray detector. The thickness

  17. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Balaji, M. [Science et Ingenierie des Materiaux et des Procedes, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Heres (France); ACERDE, 452 rue des sources, 38920 Crolles (France); Crystal Growth Centre, Anna University-Chennai, Chennai 600025 (India); Claudel, A. [ACERDE, 452 rue des sources, 38920 Crolles (France); Fellmann, V. [Science et Ingenierie des Materiaux et des Procedes, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Heres (France); Gelard, I. [ACERDE, 452 rue des sources, 38920 Crolles (France); Blanquet, E., E-mail: elisabeth.blanquet@simap.grenoble-inp.fr [Science et Ingenierie des Materiaux et des Procedes, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Heres (France); Boichot, R. [Science et Ingenierie des Materiaux et des Procedes, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Heres (France); Pierret, A. [Departement de Mesures Physiques, ONERA, Chemin de la Huniere, 91761 Palaiseau Cedex (France); CEA-CNRS Group ' NanoPhysique et SemiConducteurs' , INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble, Cedex 9 (France); and others

    2012-06-15

    Highlights: Black-Right-Pointing-Pointer Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. Black-Right-Pointing-Pointer AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. Black-Right-Pointing-Pointer Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 Degree-Sign C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction {theta} - 2{theta} scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 Degree-Sign C using a NL grown at 850 Degree-Sign C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 Degree-Sign C and 1400 Degree-Sign C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

  18. PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

    Science.gov (United States)

    Liu, Sanjie; Peng, Mingzeng; Hou, Caixia; He, Yingfeng; Li, Meiling; Zheng, Xinhe

    2017-04-01

    Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film and Si (100). It is consistent with high-resolution image of the sharp interface analyzed by transmission electron microscope (TEM). The highly uniform thickness throughout the 2-inch size AlN film with blue covered surface was determined by spectroscopic ellipsometry (SE). Grazing incident X-ray diffraction (GIXRD) patterns indicate that the AlN films are polycrystalline with wurtzite structure and have a tendency to form (002) preferential orientation with increasing of the thickness. The obtained AlN films could open up a new approach of research in the use of AlN as the template to support gallium nitride (GaN) growth on silicon substrates.

  19. Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Ali Haider

    2014-09-01

    Full Text Available Aluminum nitride (AlN/boron nitride (BN bishell hollow nanofibers (HNFs have been fabricated by successive atomic layer deposition (ALD of AlN and sequential chemical vapor deposition (CVD of BN on electrospun polymeric nanofibrous template. A four-step fabrication process was utilized: (i fabrication of polymeric (nylon 6,6 nanofibers via electrospinning, (ii hollow cathode plasma-assisted ALD of AlN at 100 °C onto electrospun polymeric nanofibers, (iii calcination at 500 °C for 2 h in order to remove the polymeric template, and (iv sequential CVD growth of BN at 450 °C. AlN/BN HNFs have been characterized for their chemical composition, surface morphology, crystal structure, and internal nanostructure using X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction. Measurements confirmed the presence of crystalline hexagonal BN and AlN within the three dimensional (3D network of bishell HNFs with relatively low impurity content. In contrast to the smooth surface of the inner AlN layer, outer BN coating showed a highly rough 3D morphology in the form of BN nano-needle crystallites. It is shown that the combination of electrospinning and plasma-assisted low-temperature ALD/CVD can produce highly controlled multi-layered bishell nitride ceramic hollow nanostructures. While electrospinning enables easy fabrication of nanofibrous template, self-limiting reactions of plasma-assisted ALD and sequential CVD provide control over the wall thicknesses of AlN and BN layers with sub-nanometer accuracy.

  20. Berkovich Nanoindentation on AlN Thin Films

    Directory of Open Access Journals (Sweden)

    Jian Sheng-Rui

    2010-01-01

    Full Text Available Abstract Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM and cross-sectional transmission electron microscopy (XTEM techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD derived Si-doped (2 × 1017 cm−3 GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

  1. Design and fabrication of optical thin film layers with variable thickness profile for producing variable reflectivity mirrors

    Directory of Open Access Journals (Sweden)

    Hamid R fallah

    2006-12-01

    Full Text Available   The design method and fabrication of mirrors with variable reflectivity are presented. To fabricate such a mirror a fixed mask with a circular aperture is used. The circular aperture is considered as an extended source with cosx(θas its diffusion distribution function and is the parameter for the distribution function of the particles through the aperture. The thickness profile of deposited layer is a function of this distribution. In this work, the coating system is calibrated for the materials which are used and then the parameter of the diffusion distribution function of the particles through the circular aperture is defined by experiments. Using these results, a graph is presented which connects the parameter of the circular aperture to the parameters of the thickness profile. It is then possible to deposit any type of variable reflectivity mirror using this graph. Finally, the effect of the uncertainty in measuring layer thicknesses on the phase of reflected wave and transmitted wave is investigated.

  2. Fabrication and Characterization of PZT Thick Films for Sensing and Actuation

    Directory of Open Access Journals (Sweden)

    Kuo-Ching Kuo

    2007-04-01

    Full Text Available Lead Zirconate Titanate oxide (PZT thick films with thicknesses of up to 10 μmwere developed using a modified sol-gel technique. Usually, the film thickness is less than1 μm by conventional sol-gel processing, while the electrical charge accumulation whichreveals the direct effect of piezoelectricity is proportional to the film thickness and thereforerestricted. Two approaches were adopted to conventional sol-gel processing – precursorconcentration modulation and rapid thermal annealing. A 10 μm thick film was successfullyfabricated by coating 16 times via this technique. The thickness of each coating layer wasabout 0.6 μm and the morphology of the film was dense with a crack-free area as large as 16mm2. In addition, the structure, surface morphology and physical properties werecharacterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and atomicforce microscopy (AFM and electrical performance. The dielectric constant and hysteresisloops were measured as electric characteristics. This study investigates the actuation andsensing performance of the vibrating structures with the piezoelectric thick film. Theactuation tests demonstrated that a 4 mm x 4 mm x 6.5 μm PZT film drove a 40 mm x 7 mmx 0.5 mm silicon beam as an actuator. Additionally, it generated an electrical signal of 60mVpp as a sensor, while vibration was input by a shaker. The frequencies of the first twomodes of the beam were compared with the theoretical values obtained by Euler-Bernoullibeam theory. The linearity of the actuation and sensing tests were also examined.

  3. Development of automated welding process for field fabrication of thick walled pressure vessels. Fourth quarter technical progress report for period ending September 30, 1979

    Energy Technology Data Exchange (ETDEWEB)

    None

    1979-01-01

    Progress in developing an automated welding process for the field fabrication of thick walled pressure vessels is reported. Plans for the demonstration facility, for nondestructive testing, and for the procurement of materials are discussed. (LCL)

  4. Copper foils with gradient structure in thickness direction and diff erent roughnesses on two surfaces fabricated by double rolling

    Institute of Scientific and Technical Information of China (English)

    Xi-yong Wang; Xue-feng Liu; Wen-jiang Zou; Jian-xin Xie

    2013-01-01

    Copper foils with gradient structure in thickness direction and diff erent roughnesses on two surfaces were fabricated by double rolling. The two surface morphologies of double-rolled copper foils are quite diff erent, and the surface roughness values are 61 and 1095 nm, respectively. The roughness value of matt surface can meet the requirement for bonding the resin matrix with copper foils used for flexible printed circuit boards, thus may omit traditional roughening treatment;the microstructure of double-rolled copper foils demonstrates an obviously asymmetric gradient feature. From bright surface to matt surface in thickness direction, the average grain size first increases from 2.3 to 7.4 µm and then decreases to 3.6 µm; compared with conventional rolled copper foils, the double-rolled copper foils exhibit a remarkably increased bending fatigue life, and the increased range is about 16.2%.

  5. Potentiometric RuO2-Ta2O5 pH sensors fabricated using thick film and LTCC technologies.

    Science.gov (United States)

    Manjakkal, Libu; Zaraska, Krzysztof; Cvejin, Katarina; Kulawik, Jan; Szwagierczak, Dorota

    2016-01-15

    The paper reports on the preparation, properties and application of potentiometric pH sensors with thick film RuO2-Ta2O5 sensing electrode and Ag/AgCl/KCl reference electrode screen printed on an alumina substrate. Furthermore, it presents fabrication procedure and characterization of a new miniaturized pH sensor on LTCC (low temperature cofired ceramics) substrate, destined for wireless monitoring. The crystal structure, phase and elemental composition, and microstructure of the films were investigated by X-ray diffractometry, Raman spectroscopy, scanning electron microscopy and energy dispersive spectroscopy. Potentiometric characterization was performed in a wide pH range of 2-12 for different storage conditions and pH loops. The advantages of the proposed thick film pH sensors are: (a) low cost and easy fabrication, (b) excellent sensitivity close to the Nernstian response (56mV/pH) in the wide pH range, (c) fast response, (d) long lifetime, (e) good reproducibility, (f) low hysteresis and drift effects, and (g) low cross-sensitivity towards Li(+), Na(+) and K(+) as interfering ions. The applicability of the sensors for pH measurement of river, tap and distilled water, and some drinks was also tested.

  6. Fabrication and characterization of micromachined high-frequency tonpilz transducers derived by PZT thick films.

    Science.gov (United States)

    Zhou, Qifa; Cannata, Jonathan M; Meyer, Richard J; van Tol, David J; Tadigadapa, Srinivas; Hughes, W Jack; Shung, K Kirk; Trolier-McKinstry, Susan

    2005-03-01

    Miniaturized tonpilz transducers are potentially useful for ultrasonic imaging in the 10 to 100 MHz frequency range due to their higher efficiency and output capabilities. In this work, 4 to 10-microm thick piezoelectric thin films were used as the active element in the construction of miniaturized tonpilz structures. The tonpilz stack consisted of silver/lead zirconate titanate (PZT)/lanthanum nickelate (LaNiO3)/silicon on insulator (SOI) substrates. First, conductive LaNiO3 thin films, approximately 300 nm in thickness, were grown on SOI substrates by a metalorganic decomposition (MOD) method. The room temperature resistivity of the LaNiO3 was 6.5 x 10(-6) omega x m. Randomly oriented PZT (52/48) films up to 7-microm thick were then deposited using a sol-gel process on the LaNiO3-coated SOI substrates. The PZT films with LaNiO3 bottom electrodes showed good dielectric and ferroelectric properties. The relative dielectric permittivity (at 1 kHz) was about 1030. The remanent polarization of PZT films was larger than 26 microC/cm2. The effective transverse piezoelectric e31,f coefficient of PZT thick films was about -6.5 C/m2 when poled at -75 kV/cm for 15 minutes at room temperature. Enhanced piezoelectric properties were obtained on poling the PZT films at higher temperatures. A silver layer about 40-microm thick was prepared by silver powder dispersed in epoxy and deposited onto the PZT film to form the tail mass of the tonpilz structure. The top layers of this wafer were subsequently diced with a saw, and the structure was bonded to a second wafer. The original silicon carrier wafer was polished and etched using a Xenon difluoride (XeF2) etching system. The resulting structures showed good piezoelectric activity. This process flow should enable integration of the piezoelectric elements with drive/receive electronics.

  7. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

    Directory of Open Access Journals (Sweden)

    Shuo-Wei Chen

    2016-04-01

    Full Text Available The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs with ex-situ sputtered physical vapor deposition (PVD aluminum nitride (AlN nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

  8. Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering

    Science.gov (United States)

    Hajakbari, Fatemeh; Mojtahedzadeh Larijani, Majid; Ghoranneviss, Mahmood; Aslaninejad, Morteza; Hojabri, Alireza

    2010-09-01

    The structural and optical properties of aluminum nitride (AlN) films deposited on glass and silicon substrates by single ion beam sputtering technique have been investigated. The X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) study revealed the formation of the amorphous phase of AlN. The optical characteristics of films, such as refractive index, extinction coefficient, and average thickness, were calculated by Swanepoel's method using transmittance measurements. The refractive index and average roughness values of the films increased with film thickness. Moreover, it was found that thickness augmentation leads to a decrease in optical band gap energy calculated using Tauc's relation.

  9. Fabricating Nanometer-Thick Simultaneously Oleophobic/Hydrophilic Polymer Coatings via a Photochemical Approach.

    Science.gov (United States)

    Wang, Yongjin; Dugan, Michael; Urbaniak, Brian; Li, Lei

    2016-07-05

    The simultaneously oleophobic/hydrophilic coatings are highly desirable in antifogging, oil-water separation, and detergent-free cleaning. However, such coatings require special chemical structure, i.e., perfluorinated backbone and polar end-groups, and are too expensive for real-life application. Here, we have developed an UV-based photochemical approach to make nanometer-thick perfluoropolyethers without polar end-groups, which are not intrinsically simultaneously oleophobic/hydrophilic but cost-effective, become simultaneously oleophobic/hydrophilic. The contact angle, ellipsometry, and X-ray photoelectron spectroscopy (XPS) results indicated that the UV irradiation results in the covalent bonding between the polymer and the substrate, which renders more ordered packing of polymer chains and thus the appropriately small interchain distance. As a result, the small water molecules penetrate the polymer network while large oil molecules do not. As a result, the oil contact angle is larger than the water contact angle and the coating shows the simultaneous oleophobicity/hydrophilicity. Moreover, we also demonstrated that this nanometer-thick simultaneously oleophobic/hydrophilic coating has improved long-term antifogging performance and detergent-free cleaning capability and is mechanically robust. The photochemical approach established here potentially can be applied on many other polymers and greatly accelerate the development and application of simultaneously oleophobic/hydrophilic coatings.

  10. Growth of AlN nanostructure on GaN using MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Loganathan, R.; Ramesh, R.; Jayasakthi, M.; Prabakaran, K.; Kuppulingam, B.; Sankaranarayanan, M.; Balaji, M.; Arivazhagan, P.; Singh, Subra; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2015-06-24

    Aluminum nitride (AlN) nanowalls have been epitaxially grown on dislocation assisted GaN/Al{sub 2}O{sub 3} template by metal organic chemical vapor deposition (MOCVD) without any help of metal catalysts. A large number of nanowalls with thicknesses of 1.5-2.0 µm and height 400 nm have been deposited. The AlN nanowalls were found to have a preferred c-axis oriented with a hexagonal crystal structure. The AlN nanowalls and GaN/Al{sub 2}O{sub 3} template have been characterize at room temperature photoluminescence (PL) and high resolution X-ray diffraction (HRXRD)

  11. Piezoelectric and magnetoelectric thick films for fabricating power sources in wireless sensor nodes.

    Science.gov (United States)

    Priya, Shashank; Ryu, Jungho; Park, Chee-Sung; Oliver, Josiah; Choi, Jong-Jin; Park, Dong-Soo

    2009-01-01

    In this manuscript, we review the progress made in the synthesis of thick film-based piezoelectric and magnetoelectric structures for harvesting energy from mechanical vibrations and magnetic field. Piezoelectric compositions in the system Pb(Zr,Ti)O(3)-Pb(Zn(1/3)Nb(2/3))O(3) (PZNT) have shown promise for providing enhanced efficiency due to higher energy density and thus form the base of transducers designed for capturing the mechanical energy. Laminate structures of PZNT with magnetostrictive ferrite materials provide large magnitudes of magnetoelectric coupling and are being targeted to capture the stray magnetic field energy. We analyze the models used to predict the performance of the energy harvesters and present a full system description.

  12. Piezoelectric and Magnetoelectric Thick Films for Fabricating Power Sources in Wireless Sensor Nodes

    Directory of Open Access Journals (Sweden)

    Jong-Jin Choi

    2009-08-01

    Full Text Available In this manuscript, we review the progress made in the synthesis of thick film-based piezoelectric and magnetoelectric structures for harvesting energy from mechanical vibrations and magnetic field. Piezoelectric compositions in the system Pb(Zr,TiO3–Pb(Zn1/3Nb2/3O3 (PZNT have shown promise for providing enhanced efficiency due to higher energy density and thus form the base of transducers designed for capturing the mechanical energy. Laminate structures of PZNT with magnetostrictive ferrite materials provide large magnitudes of magnetoelectric coupling and are being targeted to capture the stray magnetic field energy. We analyze the models used to predict the performance of the energy harvesters and present a full system description.

  13. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    Science.gov (United States)

    Lin, Jianliang; Chistyakov, Roman

    2017-02-01

    Highly c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm-2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm-2 improved the orientation. Further increasing the peak target current density to above 0.53 Acm-2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  14. Versatile fabrication of nanocomposite microcapsules with controlled shell thickness and low permeability.

    Science.gov (United States)

    Yang, Yu; Wei, Zengjiang; Wang, Chaoyang; Tong, Zhen

    2013-04-10

    Novel ethyl phenylacetate (EPA)-loaded nanocomposite microcapsules with polyurea (PU) /poly (melamine formaldehyde) (PMF) shells were facilely and fabricated: by using silica nanoparticle-stabilized oil-in-water (o/w) emulsion template and subsequent interfacial reaction and in situ polymerization. SiO2 nanoparticles absorbed at the interface between oil and water to stabilize the o/w emulsions. The oil droplets containing EPA, isophorone diisocyanate (IPDI) and tolylene 2,4-diisocyanate-terminated poly (propylene glycol) (PPG-TDI) were subsequently reacted with MF prepolymer (pre-MF) dissolved in water phases. The interfacial reaction between pre-MF and IPDI produced interior PU walls. Meanwhile, the in situ polymerization of pre-MF generated exterior PMF walls. It was found that these in/out double walls were compact together. The resulting capsules had spherical shapes and rough exterior surfaces, and could be easily isolated, dried, and redispersed in epoxy resins. The size of the produced microcapsules was dependent on the concentration of SiO2 nanoparticles. The dynamic thermal gravimetric analysis (TGA) demonstrated that the capsules showed excellent thermal stability with little weight loss when exposed at 150 °C for 2 h. Interestingly, with a double PU/PMF shell, these capsules exhibited an extra-low permeability. Moreover, these microcapsules can also demonstrate exceelent magnetic responsiveness after introducing magnetic nanoparticles inside. We believe our microcapsules could be potential candidates in microcapsule engineering, self-healing composites, and drug-carrying systems.

  15. Fabrication of SnO2 based CO gas sensor device using thick film technology

    Science.gov (United States)

    Hermida, I. D. P.; Wiranto, G.; Hiskia; Nopriyanti, R.

    2016-11-01

    This research was aimed at fabricating a CO gas sensor based on SnO2 material synthesized using sol-gel method. The sensor components include thin film gold electrode and a PdAg heater screen printed on the backside of the alumina substrate. The device was tested to study the effect of temperature variation on the resistivity of the heater component, and the response of the SnO2 sensitive layer to 10 ppm CO gas. The SnO2 layer was characterized using SEM and EDS to determine the morphology and composition of the material. It was found that the SnO2 sensitive layer contained 21.21% C atoms, 22.43% O atoms, 14.98% Si atoms, 0.34% Cr atoms, 1.16% Ag atoms, 1.78% Sn atoms, and 38.11% Au atoms. The sensor sensitivity to CO gas increased with increasing temperature. The Operational temperature of this sensor was 95° C with the highest sensitivity value obtained was 16.59.

  16. A novel in-situ technique to fabricate thin films with controlled lateral thickness modulations

    Science.gov (United States)

    Zhang, Chi

    Surfaces having well-defined morphologies like periodic arrays of dots or lines, promise useful applications. Magnetic nanodots of Co and Fe-alloys are useful in patterned magnetic recording media. Well controlled grain size and surface area of nanostructured TiO2 are useful to develop efficient photocatalysts. However, there is a continuing need to develop techniques to make such surfaces in a simple and economical manner. In this thesis, a previously unexplored in-situ approach to assemble lateral patterns in thin films was proposed and investigated. Simple models of film growth on a defect free surface show that under uniform areal deposition rates and surface temperatures, nucleation occurs at random positions on the surface. We proposed that by exposing a growing thin film to a spatially varying surface temperature distribution, nucleation and growth can be confined to specific spatial locations. Consequently, a film with a desired pattern or thickness modulation could be achieved. The experimental approach consists of irradiating the substrate surface with a laser interference pattern simultaneous with physical vapor deposition (PVD). To perform such film growth experiments, a vibration minimized and multifunctional ultra-high vacuum chamber was integrated with a Nd:YAG laser. The laser output is a beam of 266 nm with a coherence length of approximately 2 m and an area of ˜0.8 x 0.8 cm2. The laser has a pulse width of 9 ns, a constant repetition rate of 50 Hz, with a rated peak output of 44 mJ/pulse. The typical laser energy density used in this work was about 10 mJ/cm2. Since sub-micron length scales were of interest, vibration studies were performed by recording the interference patterns on kapton films. Results from the kapton films, measurements using a shear accelerometer and recent growth results showed that peak-to-peak vibration amplitudes on the substrate surface were less than +/-25 nm. Well-established PVD techniques like pulsed laser deposition

  17. Fabrication of CIS Absorber Layers with Different Thicknesses Using A Non-Vacuum Spray Coating Method.

    Science.gov (United States)

    Diao, Chien-Chen; Kuo, Hsin-Hui; Tzou, Wen-Cheng; Chen, Yen-Lin; Yang, Cheng-Fu

    2014-01-03

    In this study, a new thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CuInSe₂ absorber layers. The spray coating method developed in this study was a non-vacuum process, based on dispersed nano-scale CuInSe₂ precursor and could offer a simple, inexpensive, and alternative formation technology for CuInSe₂ absorber layers. After spraying on Mo/glass substrates, the CuInSe₂ thin films were annealed at 550 °C by changing the annealing time from 5 min to 30 min in a selenization furnace, using N₂ as atmosphere. When the CuInSe₂ thin films were annealed, without extra Se or H₂Se gas used as the compensation source during the annealing process. The aim of this project was to investigate the influence of annealing time on the densification and crystallization of the CuInSe₂ absorber layers to optimize the quality for cost effective solar cell production. The thickness of the CuInSe₂ absorber layers could be controlled as the volume of used dispersed CuInSe₂-isopropyl alcohol solution was controlled. In this work, X-ray diffraction patterns, field emission scanning electron microscopy, and Hall parameter measurements were performed in order to verify the quality of the CuInSe₂ absorber layers obtained by the Spray Coating Method.

  18. Fabrication of a nanometer thick nitrogen delta doped layer at the sub-surface region of (100) diamond

    Science.gov (United States)

    Chandran, Maneesh; Michaelson, Shaul; Saguy, Cecile; Hoffman, Alon

    2016-11-01

    In this letter, we report on the proof of a concept of an innovative delta doping technique to fabricate an ensemble of nitrogen vacancy centers at shallow depths in (100) diamond. A nitrogen delta doped layer with a concentration of ˜1.8 × 1020 cm-3 and a thickness of a few nanometers was produced using this method. Nitrogen delta doping was realized by producing a stable nitrogen terminated (N-terminated) diamond surface using the RF nitridation process and subsequently depositing a thin layer of diamond on the N-terminated diamond surface. The concentration of nitrogen on the N-terminated diamond surface and its stability upon exposure to chemical vapor deposition conditions are determined by x-ray photoelectron spectroscopy analysis. The SIMS profile exhibits a positive concentration gradient of 1.9 nm/decade and a negative gradient of 4.2 nm/decade. The proposed method offers a finer control on the thickness of the delta doped layer than the currently used ion implantation and delta doping techniques.

  19. Ohmic and rectifying contacts on bulk AlN for radiation detector applications

    Energy Technology Data Exchange (ETDEWEB)

    Erlbacher, Tobias; Kallinger, Birgit; Meissner, Elke; Bauer, Anton J. [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Bickermann, Matthias [CrystAl-N GmbH, Am Weichselgarten 7, 91058 Erlangen (Germany); Department of Materials Science 6 (I-MEET), University of Erlangen-Nuernberg, Martensstrasse 7, 91058 Erlangen (Germany); Frey, Lothar [Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany); Chair of Electron Devices, University of Erlangen-Nuernberg, Cauerstrasse 6, 91058 Erlangen (Germany)

    2012-03-15

    In this paper we report on ohmic and rectifying contacts fabricated on undoped bulk AlN substrates for radiation detector applications. The ohmic Ni contacts exhibit negligible contact resistances. Current conduction is dominated by field enhanced thermal emission from traps 0.4 to 0.6 eV below the conduction band. The Pt Schottky contacts show excellent rectifying behaviour. In forward conduction, device current is again limited by the Poole-Frenkel effect. The Schottky barrier features very low reverse leakage currents, and voltages of up to -200 V can be applied. The capability of bulk AlN for radiation detectors at room temperature is demonstrated. Suitability is deduced from both X-ray absorption experiments and low reverse leakage currents of the fabricated Schottky diodes. Additionally, the AlN substrate is almost blind to sun light due to its wide band gap. Still, reduction of recombination sites in AlN is required to achieve maximum detector performance. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

    Science.gov (United States)

    1992-06-01

    AD-A253 331 Semiannual Report Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication...Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and the Subsequent Fabrication of Superlattice Structures Using...34 substrates, such as using a graded AlxGal-xN solid solution as a buffer layer. E. Conclusion We have shown that in the use of our modified gas source MBE

  1. The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

    Science.gov (United States)

    Tran, A. T.; Pandraud, G.; Tichelaar, F. D.; Nguyen, M. D.; Schellevis, H.; Sarro, P. M.

    2013-11-01

    The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN grains of the interlayer, and show the same columnar grain structure as the sample without interlayer. Hence, the structure of the AlN top layer is independent of the presence of an AlN interlayer below the Ti layer and is mainly determined by the Ti layer microstructure.

  2. Achieving high thermal conductivity from AlN films deposited by high-power impulse magnetron sputtering

    Science.gov (United States)

    Ait Aissa, K.; Semmar, N.; Achour, A.; Simon, Q.; Petit, A.; Camus, J.; Boulmer-Leborgne, C.; Djouadi, M. A.

    2014-09-01

    We report on thermal conductivity measurements of aluminum nitride (AlN) films using the fast pulsed photo-thermal technique. The films were deposited by high-power impulse magnetron sputtering with different thicknesses ranging from 1000 to 8000 nm on (1 0 0) oriented silicon substrates. The films were characterized by x-ray diffraction (XRD), Raman spectroscopy, profilometry, scanning electron microscopy and atomic force microscopy. The XRD measurements showed that AlN films were textured along the (0 0 2) direction. Moreover, x-ray rocking curve measurements indicated that the crystalline quality of AlN was improved with the increase in film thickness. The thermal conductivities of the samples were found to rapidly increase when the film thickness increased up to 3300 nm and then showed a tendency to remain constant. A thermal boundary resistance as low as 8 × 10-9 W-1 K m2 and a thermal conductivity as high as 250 ± 50 W K-1 m-1 were obtained for the AlN films, at room temperature. This high thermal conductivity value is close to that of an AlN single crystal and highlights the potential of these films as a dielectric material for thermal management.

  3. Infrared blocking, microwave and terahertz low-loss transmission AlN films grown on flexible polymeric substrates

    Science.gov (United States)

    Rudenko, E.; Tsybrii, Z.; Sizov, F.; Korotash, I.; Polotskiy, D.; Skoryk, M.; Vuichyk, M.; Svezhentsova, K.

    2017-04-01

    Aluminum nitride (AlN) film coatings on flexible substrates (polymeric Teflon, Mylar) have been obtained using a hybrid helicon-arc ion-plasma deposition technique with high adhesion of coatings. Studies of optical, morphological, and structural properties of AlN films have been carried out. It was found that AlN coatings on Teflon and Mylar thin-film substrates substantially suppress transmission of infrared (IR) radiation within the spectral range λ ˜ 5-20 μm at certain technological parameters and thickness of AlN. Transmission in THz regions by using quasioptics attains T ≈ 79%-95%, and losses measured in the channels within the microwave region 2 to 36 GHz are <0.06 dB. The obtained composite structures (AlN coatings on Teflon and Mylar thin-film substrates), due to a high thermal conductivity of AlN, could be used as efficient blocking structures in the infrared spectral range ("infrared stealth") withdrawing the heat from filters warmed by IR radiation. At the same time, they can be used as the transparent ones in the microwave and THz regions, which can be important for low-temperature detector components of navigation, positioning, and telecommunication systems due to reducing the background noise.

  4. Development of automated welding process for field fabrication of thick walled pressure vessels. Fourth quarter technical progress report for period ending September 28, 1980

    Energy Technology Data Exchange (ETDEWEB)

    1980-01-01

    Progress is reported in research aimed at optimizing an automated welding process for the field fabrication of thick-walled pressure vessels and for evaluating the welded joints. Information is included on the welding equipment, mechanical control of the process, joint design, filler wire optimization, in-process nondestructive testing of welds, and repair techniques. (LCL)

  5. Fabrication and sensing behavior of NASICON thick film SO{sub 2} gas sensor by screen-printing method

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.T.; Bae, J.C.; Jun, H.K.; Huh, J.S. [Dept. of Materials Science and Metallurgy, Kyungpook National Univ., Daegu (Korea); Lee, D.D. [Dept. of Electronics, Kyungpook National Univ., Daegu, Korea, Daegu (Korea)

    2003-07-01

    The thick type sensor having Pt/Na super ionic conductor (NASICON) Pt/Na{sub 2}SO{sub 4}/Pt catalyst system for SO{sub 2} gas sensing was fabricated by screen printing method. The phases of NASICON with the variation of sintering temperature (1050 C, 1150 C, 1250 C) and sintering time (1.5 hr, 2.5 hr, 3.5 hr) were investigated by XRD. The variation of electromotive force of the sensor with SO{sub 2} concentration and operation temperature were also investigated. The major phase of NASICON film sintered at 1150 C for 3.5 hr was sodium zirconium silicon phosphate (Na{sub 3}Zr{sub 2}Si{sub 2}PO{sub 12}). The Nernest's slope of NASICON sensor for SO{sub 2} gas with the variation of concentration from 10 to 100 ppm was 176.12 mV/decade at the operating temperature of 500 C. The increase of oxygen partial pressure was not affected to the variation of Nernst's slope. (orig.)

  6. The effect of ceramic thickness and number of firings on the color of a zirconium oxide based all ceramic system fabricated using CAD/CAM technology

    Science.gov (United States)

    Aras, Meena Ajay

    2011-01-01

    PURPOSE Ceramics have a long history in fixed prosthodontics for achieving optimal esthetics and various materials have been used to improve ceramic core strength. However, there is a lack of information on how color is affected by fabrication procedure. The purpose of this study was to evaluate the effects of various dentin ceramic thicknesses and repeated firings on the color of zirconium oxide all-ceramic system (Lava™) fabricated using CAD/CAM technology. MATERIALS AND METHODS Thirty disc-shaped cores, 12 mm in diameter with a 1 mm thickness were fabricated from zirconium oxide based all ceramic systems (Lava™, 3M ESPE, St Paul, MN, USA) and divided into three groups (n = 10) according to veneering with dentin ceramic thicknesses: as 0.5, 1, or 1.5 mm. Repeated firings (3, 5, 7, or 9) were performed, and the color of the specimens was compared with the color after the initial firing. Color differences among ceramic specimens were measured using a spectrophotometer (VITA Easyshade, VITA Zahnfabrik, Bad Säckingen, Germany) and data were expressed in CIELAB system coordinates. A repeated measures ANOVA and Bonferroni post hoc test were used to analyze the data (n = 10, α=.05). RESULTS L*a*b* values of the ceramic systems were affected by the number of firings (3, 5, 7, or 9 firings) (P<.001) and ceramic thickness (0.5, 1, or 1.5 mm) (P<.001). Significant interactions were present in L*a*b* values between the number of firings and ceramic thickness (P<.001). An increase in number of firings resulted in significant increase in L* values for both 0.5 mm and 1.5 mm thicknesses (P<.01, P=.013); however it decreased for 1 mm thickness (P<.01). The a* values increased for 1 mm and 1.5 mm thicknesses (P<.01), while it decreased for 0.5 mm specimens. The b* values increased significantly for all thicknesses (P<.01, P=.022). As the dentin ceramic thickness increased, significant reductions in L* values (P<.01) were recorded. There were significant increases in both a

  7. Synthesis of high-purity Ti2AlN ceramic by hot pressing

    Institute of Scientific and Technical Information of China (English)

    YAN Ming; CHEN Yan-lin; MEI Bing-chu; ZHU Jiao-qun

    2008-01-01

    High-purity Ti2AlN ceramic was prepared at 1300 ℃ by hot pressing(HP) of Ti/Al/TiN powders in stoichiometric proportion. The sintered product was characterized using X-ray diffraction(XRD) and MDI Jade 5.0 software (Materials Data Inc, Liverpool, CA). Scanning electron microscopy(SEM) and electron probe micro-analysis(EPMA) coupled with energy-dispersive spectroscopy(EDS) were utilized to investigate the morphology characteristics. The results show that Ti2AlN phase is well-developed with a close and lamellar structure. The grains are plate-like with the size of 3-5 μm, thickness of 8-10 μm and elongated dimension. The density of Ti2AlN is measured to be 4.22 g/cm3, which reaches 97.9% of its theory value. The distribution of Ti2AlN grains is homogeneous.

  8. Thickness dependence of critical current density in MgB{sub 2} films fabricated by ex situ annealing of CVD-grown B films in Mg vapor

    Energy Technology Data Exchange (ETDEWEB)

    Hanna, Mina; Salama, Kamel [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Wang, Shufang; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16801 (United States); Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16801 (United States)], E-mail: ksalama@uh.edu

    2009-01-15

    A study was performed to examine the J{sub c} behavior as a function of thickness in MgB{sub 2} films fabricated by ex situ annealing at 840 deg. C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thicknesses range between 300 nm and 10 {mu}m. The values of J{sub c} range from 1.2 x 10{sup 7} A cm{sup -2} for 300 nm to 1.9 x 10{sup 5} A cm{sup -2} for 10 {mu}m film thicknesses at 20 K and self-field. The study shows that the critical current density (J{sub c}) in MgB{sub 2} films decreases with increasing film thickness, similar to that observed in YBCO-coated conductors. Moreover, our study shows that critical current (I{sub c}) reaches its maximum value of 728 A cm{sup -1} width at {approx}1 {mu}m thick MgB{sub 2} films at 20 K and self-field, which is, interestingly, the same thickness of pulsed-laser-deposited YBCO-coated conductors at which I{sub c} reaches its maximum value. The high J{sub c} values carried by our films show that the ex situ fabrication method can produce high quality MgB{sub 2} films at low processing temperatures, which is promising for RF cavity applications and coated-conductor wires and tapes.

  9. Getting Better: ALN and Student Success

    Science.gov (United States)

    Moore, Janet C.; Sener, John; Fetzner, Marie

    2009-01-01

    In the U.S., only 38 of every 100 ninth graders enroll in college; of these 38, only 18 complete bachelors' degrees within six years. Asynchronous learning networks (ALN)--asynchronous, highly interactive, instructor-led, resource-rich, cohort-based learning--can yield high success rates. Growing demand for online education and the expectation…

  10. Magma transport in sheet intrusions of the Alnö carbonatite complex, central Sweden.

    Science.gov (United States)

    Andersson, Magnus; Almqvist, Bjarne S G; Burchardt, Steffi; Troll, Valentin R; Malehmir, Alireza; Snowball, Ian; Kübler, Lutz

    2016-06-10

    Magma transport through the Earth's crust occurs dominantly via sheet intrusions, such as dykes and cone-sheets, and is fundamental to crustal evolution, volcanic eruptions and geochemical element cycling. However, reliable methods to reconstruct flow direction in solidified sheet intrusions have proved elusive. Anisotropy of magnetic susceptibility (AMS) in magmatic sheets is often interpreted as primary magma flow, but magnetic fabrics can be modified by post-emplacement processes, making interpretation of AMS data ambiguous. Here we present AMS data from cone-sheets in the Alnö carbonatite complex, central Sweden. We discuss six scenarios of syn- and post-emplacement processes that can modify AMS fabrics and offer a conceptual framework for systematic interpretation of magma movements in sheet intrusions. The AMS fabrics in the Alnö cone-sheets are dominantly oblate with magnetic foliations parallel to sheet orientations. These fabrics may result from primary lateral flow or from sheet closure at the terminal stage of magma transport. As the cone-sheets are discontinuous along their strike direction, sheet closure is the most probable process to explain the observed AMS fabrics. We argue that these fabrics may be common to cone-sheets and an integrated geology, petrology and AMS approach can be used to distinguish them from primary flow fabrics.

  11. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang

    2015-03-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  12. Thickness Effect of Nb-Doped TiO2 Transparent Conductive Oxide Grown on Glass Substrates Fabricated by RF Sputtering

    Science.gov (United States)

    Tseng, Zong-Liang; Chen, Lung-Chien; Tang, Jian-Fu; Shih, Meng-Fu; Chu, Sheng-Yuan

    2017-03-01

    Transparent conducting Nb-doped titanium oxide (NTO) films were deposited on a non-alkali glass substrate using an RF magnetron sputtering method with post-annealing. Structural, electrical and optical properties of the NTO films were found to be strongly dependent on film thickness. A resistivity of 4.2 × 10-3 Ω cm and an average visible transmittance of ˜70% were obtained at the film thickness of 360 nm, indicating that the polycrystalline NTO fabricated by the sputtering method has sufficient potential as a transparent conducting oxide (TCO) candidate for practical applications.

  13. Thickness Effect of Nb-Doped TiO2 Transparent Conductive Oxide Grown on Glass Substrates Fabricated by RF Sputtering

    Science.gov (United States)

    Tseng, Zong-Liang; Chen, Lung-Chien; Tang, Jian-Fu; Shih, Meng-Fu; Chu, Sheng-Yuan

    2016-12-01

    Transparent conducting Nb-doped titanium oxide (NTO) films were deposited on a non-alkali glass substrate using an RF magnetron sputtering method with post-annealing. Structural, electrical and optical properties of the NTO films were found to be strongly dependent on film thickness. A resistivity of 4.2 × 10-3 Ω cm and an average visible transmittance of ˜70% were obtained at the film thickness of 360 nm, indicating that the polycrystalline NTO fabricated by the sputtering method has sufficient potential as a transparent conducting oxide (TCO) candidate for practical applications.

  14. Fabrication

    Directory of Open Access Journals (Sweden)

    E.M.S. Azzam

    2013-12-01

    Full Text Available In the present work, the nanoclay composites were fabricated using the synthesized poly 6-(3-aminophenoxy hexane-1-thiol, poly 8-(3-aminophenoxy octane-1-thiol and poly 10-(3-aminophenoxy decane-1-thiol surfactants with gold nanoparticles. The polymeric thiol surfactants were first assembled on gold nanoparticles and then impregnated into the clay matrix. Different spectroscopic and microscopic techniques such as X-ray diffraction (XRD, Scanning electron microscope (SEM and Transmission microscope (TEM were used to characterize the fabricated nanoclay composites. The results showed that the polymeric thiol surfactants assembled on gold nanoparticles are located in the interlayer space of the clay mineral and affected the clay structure.

  15. Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer

    Science.gov (United States)

    Huang, Jun; Niu, Mu Tong; Zhang, Ji Cai; Wang, Wei; wang, Jian Feng; Xu, Ke

    2017-02-01

    Crystalline qualities of three AlN films grown by cold-wall high temperature hydride vapor phase epitaxy (CW-HT-HVPE) on c-plane sapphire substrates, with different AlN buffer layers (BLs) deposited either by CW-HT-HVPE or by hot-wall low temperature hydride vapor phase epitaxy (HW-LT-HVPE), have been studied. The best film quality was obtained on a 500-nm-thick AlN BL grown by HW-LT-HVPE at 1000 ℃. In this case,the AlN epilayer has the lowest full-width at half-maximum (FWHM) values of the (0002) and (10-12) x-ray rocking curve peaks of 295 and 306 arcsec, respectively, corresponding to the screw and edge threading dislocation (TD) densities of 1.9×108 cm-2 and 5.2×108 cm-2. This improvement in crystal quality of the AlN film can be attributed to the high compressive-stress of BL grown by HW-LT-HVPE,which facilitate the inclination and annihilation of TDs.

  16. AlN thin films deposited by DC reactive magnetron sputtering: effect of oxygen on film growth

    Science.gov (United States)

    García Molleja, Javier; José Gómez, Bernardo; Ferrón, Julio; Gautron, Eric; Bürgi, Juan; Abdallah, Bassam; Abdou Djouadi, Mohamed; Feugeas, Jorge; Jouan, Pierre-Yves

    2013-11-01

    Aluminum nitride is a ceramic compound with many technological applications in many fields, for example optics, electronics and resonators. Contaminants play a crucial role in the AlN performance. This paper focuses mainly in the effect of oxygen when AlN, with O impurities in its structure, is grown on oxidized layers. In this study, AlN thin films have been deposited at room temperature and low residual vacuum on SiO2/Si (1 0 0) substrates. AlN films were grown by DC reactive magnetron sputtering (aluminum target) and atmosphere composed by an argon/nitrogen mixture. Working pressure was 3 mTorr. Film characterization was performed by AES, XRD, SEM, EDS, FTIR, HRTEM, SAED and band-bending method. Our results show that oxidized interlayer imposes compressive stresses to AlN layer, developing a polycrystalline deposition. Indeed, when film thickness is over 900 nm, influence of oxidized interlayer diminishes and crystallographic orientation changes to the (0 0 0 2) one, i.e., columnar structure, and stress relief is induced (there is a transition from compressive to tensile stress). Also, we propose a growth scenario to explain this behaviour.

  17. Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation.

    Science.gov (United States)

    Jaramillo-Fernandez, J; Ordonez-Miranda, J; Ollier, E; Volz, S

    2015-03-28

    The effect of the structural inhomogeneity and oxygen defects on the thermal conductivity of polycrystalline aluminum nitride (AlN) thin films deposited on single-crystal silicon substrates is experimentally and theoretically investigated. The influence of the evolution of crystal structure, grain size, and out-of plane disorientation along the cross plane of the films on their thermal conductivity is analyzed. The impact of oxygen-related defects on thermal conduction is studied in AlN/AlN multilayered samples. Microstructure, texture, and grain size of the films were characterized by X-ray diffraction and scanning and transmission electron microscopy. The measured thermal conductivity obtained with the 3-omega technique for a single and multiple layers of AlN is in fairly good agreement with the theoretical predictions of our model, which is developed by considering a serial assembly of grain distributions. An effective thermal conductivity of 5.92 W m(-1) K(-1) is measured for a 1107.5 nm-thick multilayer structure, which represents a reduction of 20% of the thermal conductivity of an AlN monolayer with approximately the same thickness, due to oxygen impurities at the interface of AlN layers. Our results show that the reduction of the thermal conductivity as the film thickness is scaled down, is strongly determined by the structural inhomogeneities inside the sputtered films. The origin of this non-homogeneity and the effect on phonon scattering are also discussed.

  18. Effects of phosphoric acid on the surface morphology and reflectance of AlN grown by MBE under Al-rich conditions

    Energy Technology Data Exchange (ETDEWEB)

    Flynn, Chris, E-mail: chris.flynn@silanna.com; Sim, Lim Wu

    2015-08-31

    Aluminium nitride (AlN) films grown by molecular beam epitaxy (MBE) were exposed to phosphoric acid (H{sub 3}PO{sub 4}) heated to 70 °C for 10 min. The H{sub 3}PO{sub 4} treatment removed excess aluminium (Al) from the surface of AlN grown under Al-rich conditions. A side effect of the H{sub 3}PO{sub 4} process was the formation of hexagonal etch pits up to 180 nm in size. Reflectance measurements were performed before and after the removal of excess Al from the film surface. Excess surface Al in the form of droplets was found to strongly influence the reflectance of the AlN films. Consequently the Al surface droplets (AlSD) introduced an error into film thickness values derived from Lorentz oscillator model fitting of the specular reflectance. The film thickness measurement error due to excess surface Al was quantified as a function of the AlSD surface coverage percentage. The effect of AlSD on reflectance-based film thickness measurements must be taken into account when using AlN grown in the Al droplet regime to characterize the nitrogen (N) growth rate. - Highlights: • Phosphoric acid was used to remove excess Al from the AlN surface. • Phosphoric acid heated to 70 °C created hexagonal etch pits in the AlN films. • Excess surface Al reduced the specular component of reflectance. • Excess surface Al introduced an error of up to 7.6% in the measured AlN thickness.

  19. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    Science.gov (United States)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  20. Study on the Thickness Change of Nickel-Plated Layer in Fabrication of the Silver Hollow Nickel Waveguides by the Outer-Coating Method of the Liquid Phase Process

    CERN Document Server

    Ro, Sok-Bong; Kim, Uo-Hyon

    2016-01-01

    A metallic hollow waveguide is promising fiber for the delivery of laser radiation. Thickness of the nickel plated layer for supporting of the waveguide in fabrication of a dielectric coated silver hollow nickel waveguide is very important factor. In this paper, the change characteristic in the thickness of the nickel plated layer along the length of the silver coated glass mandrel during fabricating the silver hollow nickel waveguide by the outer-coating method of the liquid phase process has been studied both experimentally and analytically. Waveguides with uniform thickness of the nickel plated layer along the length of the silver coated glass mandrel have been fabricated.

  1. Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

    Energy Technology Data Exchange (ETDEWEB)

    Basu, T.; Kumar, M.; Som, T., E-mail: tsom@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India); Nandy, S. [CENIMAT, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa, Caparica 2829 516 (Portugal); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, Kolkata 700 064 (India); Saini, C. P.; Kanjilal, A. [Department of Physics, School of Natural Sciences, Shiv Nadar University, Gautam Budh Nagar, Uttar Pradesh 201 314 (India)

    2015-09-14

    Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature and are compared with similar films deposited on pristine-Si substrates (without ripples). It is observed that morphology of self-organized AZO films is driven by the underlying substrate morphology. For instance, for pristine-Si substrates, a granular morphology evolves for all AZO films. On the other hand, for rippled-Si substrates, morphologies having chain-like arrangement (anisotropic in nature) are observed up to a thickness of 20 nm, while a granular morphology evolves (isotropic in nature) for 30 nm-thick film. Photoluminescence studies reveal that excitonic peaks corresponding to 5–15 nm-thick AZO films, grown on rippled-Si templates, show a blue shift of 8 nm and 3 nm, respectively, whereas the peak shift is negligible for 20-nm thick film (with respect to their pristine counter parts). The observed blue shifts are substantiated by diffuse reflectance study and attributed to quantum confinement effect, associated with the size of the AZO grains and their spatial arrangements driven by the anisotropic morphology of underlying rippled-Si templates. The present findings will be useful for making tunable AZO-based light-emitting devices.

  2. Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system

    Science.gov (United States)

    Aramaki, Masaaki; Kariya, Kento; Yoshimura, Takeshi; Murakami, Shuichi; Fujimura, Norifumi

    2016-10-01

    The piezoelectric property of BiFeO3 films prepared on a (100) LaNiO3/Si(100) substrate using an rf magnetron sputtering system was investigated for their applications in MEMS vibration energy harvesters. The X-ray diffraction profiles indicate that (100)-oriented BiFeO3 films with thicknesses from 450 to 1750 nm were obtained at a deposition temperature of 510 °C. All the films showed well-defined ferroelectric hysteresis loops at room temperature. The thickness dependence of crystallinity and electrical properties indicated that the films have a bottom layer with a high defect density. The e 31,f piezoelectric coefficient and electromechanical coupling factor (k\\text{31,f}2) increase with increasing film thickness and reach -3.2 C/m2 and 3.3%, respectively, at a thickness of 1750 nm, which is considered to be caused by the decrease in defect density.

  3. Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices[Metal-Insulator-Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Vispute, R.D.; Patel, A.; Baynes, K. [and others

    2000-07-01

    The authors report on the fabrication of device-quality AlN heterostructures grown on SiC for high-temperature electronic devices. The AlN films were grown by pulsed laser deposition (PLD) at substrate temperatures ranging from 25 C (room temperature) to 1000 C. The as-grown films were investigated using x-ray diffraction, Rutherford backscattering spectroscopy, ion channeling, atomic force microscopy, and transmission electron microscopy. The AlN films grown above 700 C were highly c-axis oriented with rocking curve FWHM of 5 to 6 arc-min. The ion channeling minimum yields near the surface region for the AlN films were {approximately}2 to 4%, indicating their high degree of crystallinity. TEM studies indicated that AlN films were epitaxial and single crystalline in nature with a large number of stacking faults as a result of lattice mismatch and growth induced defects. The surface roughness for the films was about 0.5 nm, which is close to the unit cell height of the AlN. Epitaxial TiN ohmic contacts were also developed on SiC, GaN, and AlN by in-situ PLD. Epitaxial TiN/AlN/SiC MIS capacitors with gate areas of 4 {sup {minus}} 10{sup {minus}4} cm{sup 2} were fabricated, and high-temperature current-voltage (I-V) characteristics were studied up to 450 C. The authors have measured leakage current densities of low 10{sup {minus}8} A/cm{sup 2} at room temperature, and have mid 10{sup {minus}3} A/cm{sup 2} at 450 C under a field of 2 MV/cm.

  4. Design, Modelling and Fabrication of a 40-330 Hz Dual-Mass MEMS Gyroscope on Thick-SOI Technology

    NARCIS (Netherlands)

    Rajaraman, V.; Sabageh, I.; French, P.; Pansraud, G.; Cretu, E.

    2011-01-01

    This work reports the design, modelling, fabrication and preliminary functionality testing of a dual-mass MEMS vibratory gyroscope for application in medical instrumentation, among others. The two-framed gyro has drive and sense mode resonance frequencies of 2500Hz and 2830Hz, with its bandwidth tun

  5. Development of automated welding process for field fabrication of thick walled pressure vessels. Fourth quarter, FY 1980

    Energy Technology Data Exchange (ETDEWEB)

    1980-12-19

    Progress is reported in research on the automated welding of heavy steel plate for the fabrication of pressure vessels. Information is included on: torch and shield adaptation; mechanical control of the welding process; welding parameters; joint design; filler wire optimizaton; nondestructive testing of welds; and weld repair. (LCL)

  6. AlN growth on sapphire substrate by ammonia MBE

    Science.gov (United States)

    Mansurov, V. G.; Nikitin, A. Yu.; Galitsyn, Yu. G.; Svitasheva, S. N.; Zhuravlev, K. S.; Osvath, Z.; Dobos, L.; Horvath, Z. E.; Pecz, B.

    2007-03-01

    Kinetics of (0 0 0 1) Al 2O 3 surface nitridation and subsequent growth of AlN films on the sapphire substrate by ammonia molecular beam epitaxy (MBE) are investigated. Surface morphology evolution during AlN growth is studied in situ by reflection high energy electron diffraction and ex situ by atomic force microscopy. It is found that the surfaces of AlN layers thicker than 100 nm have two major features: a quite smooth background and noticeable amount of hillocks. The influence of growth conditions on the AlN surface morphology is studied in order to find a way for reducing of the hillocks density. A modification of nitridated sapphire surface by small amount of Al (1-2 monolayers) with subsequent treatment of the surface under ammonia flux is proposed. An improvement of AlN surface morphology of the layers grown on the modified surfaces is demonstrated.

  7. Synthesis and characterization of mesoporous α-Fe2O3 nanoparticles and investigation of electrical properties of fabricated thick films

    Directory of Open Access Journals (Sweden)

    Ali Mirzaei

    2016-12-01

    Full Text Available In this work, α-Fe2O3 nanoparticles (NPs have been synthesized by using a simple Pechini sol-gel method from iron nitrate, citric acid as complexing agent and ethylene glycol as polymerization agent. The calcined α-Fe2O3 NPs were fully characterized by different techniques. It was confirmed that ultrafine and highly crystalline α-Fe2O3 NPs with high purity and mesoporous nature can be obtained after calcination at 550 °C for 3 h. In addition, the results of electrical resistance measurements of the fabricated Fe2O3 thick films showed that α-Fe2O3 thick films have stable electrical properties which are beneficial for electrical applications such as gas sensing and field effect transistors.

  8. Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers

    Science.gov (United States)

    Ohnishi, Kazuki; Kanoh, Masaya; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Mukai, Takashi; Matsuoka, Takashi

    2017-10-01

    Halide vapor phase epitaxy of thick GaN films was demonstrated on ScAlMgO4 (SCAM) substrates, and their self-separation was achieved. The 320-µm-thick GaN film was self-separated from the SCAM substrate during the cooling process after the growth. This separation phenomenon occurred because of both the c-plane cleavability of SCAM and the difference in the thermal-expansion coefficients between GaN and SCAM. The dark-spot densities for the GaN films on the SCAM substrates were approximately 30% lower than those on sapphire substrates. These results indicate that SCAM substrates are promising for fabricating a high-quality freestanding GaN wafer at a low cost.

  9. Study on the Thickness Change of Nickel-Plated Layer in Fabrication of the Silver Hollow Nickel Waveguides by the Outer-Coating Method of the Liquid Phase Process

    OpenAIRE

    2016-01-01

    A metallic hollow waveguide is promising fiber for the delivery of laser radiation. Thickness of the nickel plated layer for supporting of the waveguide in fabrication of a dielectric coated silver hollow nickel waveguide is very important factor. In this paper, the change characteristic in the thickness of the nickel plated layer along the length of the silver coated glass mandrel during fabricating the silver hollow nickel waveguide by the outer-coating method of the liquid phase process ha...

  10. Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

    Energy Technology Data Exchange (ETDEWEB)

    Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

    2011-01-01

    AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

  11. Charged vacancy induced enhanced piezoelectric response of reactive assistive IBSD grown AlN thin films

    Science.gov (United States)

    Sharma, Neha; Rath, Martando; Ilango, S.; Ravindran, T. R.; Ramachandra Rao, M. S.; Dash, S.; Tyagi, A. K.

    2017-01-01

    Piezoelectric response of AlN thin films was investigated in a AlN/Ti/Si(1 0 0) layer structure prepared by ion beam sputter deposition (IBSD) in reactive assistance of N+/\\text{N}2+ ions. The samples were characterized for their microstructure, piezoelectric response and charged defects using high resolution x-ray diffraction (HR-XRD), piezo force microscopy (PFM) and photoluminescence (PL) spectroscopy respectively. Our results show that the films are highly textured along the a-axis and charged native point defects are present in the microstructure. Phase images of these samples obtained from PFM show that the films are predominantly N-polar. The measured values of piezoelectric coefficient d 33(eff) for these samples are as high as 206  ±  20 pm V-1 and 668  ±  60 pm V-1 calculated by piezo response loop for AlN films of a thickness of 235 nm and 294 nm respectively. A mechanism for high d 33(eff) values is proposed with a suitable model based on the charged defects induced enhanced polarization in the dielectric continuum of AlN.

  12. The photovoltaic efficiency of the fabrication of copolymer P3HT:PCBM on different thickness nano-anatase titania as solar cell

    Science.gov (United States)

    Lazim, Haidar Gazy; Ajeel, Khalid I.; Badran, Hussain A.

    2015-06-01

    Organic solar cells based on (3-hexylthiophene):[6,6]-phenyl C61-butyric acid methylester (P3HT:PCBM) bulk heterojunction (BHJ) with an inverted structure have been fabricated using nano-anatase crystalline titanium dioxide (TiO2) as their electron transport layer, which was prepared on the indium tin oxide coated glass (ITO-glass), silicon wafer and glass substrates by sol-gel method at different spin speed by using spin-coating (1000, 2000 and 3000 rpm) for nano-thin film 58, 75 and 90 nm respectively. The effect of thickness on the surface morphology and optical properties of TiO2 layer were investigated by atomic force microscopy (AFM), X-ray diffraction and UV-visible spectrophotometer. The optical band gap of the films has been found to be in the range 3.63-3.96 eV for allowed direct transition and to be in the range 3.23-3.69 eV for forbidden direct transition to the different TiO2 thickness. The samples were examined to feature current and voltages darkness and light extraction efficiency of the solar cell where they were getting the highest open-circuit voltage, Voc, and power conversion efficiency were 0.66% and 0.39% fabricated with 90 nm respectively.

  13. Design and Fabrication of Low Cost Thick Film pH Sensor using Silver Chlorinated Reference Electrodes with Integrated Temperature Sensor

    Directory of Open Access Journals (Sweden)

    Wiranto Goib

    2016-01-01

    Full Text Available This paper describes the design and fabrication of thick film pH sensor, in which the reference electrode has been formed by chlorination of Ag using FeCl3. The process was aimed to replace Ag/AgCl paste commonly used as reference electrodes. Fabricated using thick film screen printing technology on Al2O3 substrate, the pH sensor showed a measured sensitivity of -52.97, -53.17 and -53.68 mV/pH at 25°C, 45°C, and 65°C, respectively. The measured values were close to the theoretical Nernstian slope of -59 mV/pH 25°C.The sensor was also designed with an integrated Ruthenium based temperature sensor for future temperature compensation. The measured resistance temperature characteristics showed a linear reasponse over the range of 25 – 80°C. This miniaturised planar sensor should find wide application, especially in field water quality monitoring, replacing their glass type counterparts.

  14. Fabrication and Optimization of Brush-Printed n-type Bi2Te3 Thick Films for Thermoelectric Cooling Devices

    Science.gov (United States)

    Liu, Xing; Zhao, Wen-yu; Zhou, Hong-yu; Mu, Xin; He, Dan-qi; Zhu, Wan-ting; Wei, Ping; Wu, Han; Zhang, Qing-jie

    2016-03-01

    A simple, efficient and rapid brush-printing method has been developed for preparation of n-type Bi2Te2.7Se0.3 films approximately 100-150 μm thick. X-ray diffraction, scanning electron microscopy, electron probe microanalysis, and four-point probe measurements were used to characterize the crystal structure, composition, microstructure, and electrical properties of the films. The results showed that all the n-type Bi2Te2.7Se0.3 thick films were composed of single-phase Bi2Te2.7Se0.3; the grains in the films were randomly distributed in the low-temperature-annealed samples and predominantly oriented along the (00 l) plane in samples annealed at temperatures >673 K. σ and the absolute value of α first increased substantially with increasing the annealing temperature in the range 573-673 K then decreased when the annealing temperature was increased further. The dependence of σ and α on annealing temperature may be reasonably explained on the basis of the change in the microstructure induced by annealing. The performance of a prototype cooling device containing n-type Bi2Te2.7Se0.3 thick films was evaluated for temperature differences produced by use of different DC currents.

  15. Dependence of Ohmic Contact Resistance on Barrier Thickness of AlN/GaN HEMT Structures

    Science.gov (United States)

    2010-01-01

    thickness of AlN/ GaN HEMT structures 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER 5e. TASK NUMBER...Electronics journal homepage: www.elsevier .com/locate /sseLetter Dependence of ohmic contact resistance on barrier thickness of AlN/ GaN HEMT ...Available online x The review of this paper was arranged by Prof. E. Calleja Keywords: AlN GaN HEMT Ohmic contact Heterostructure0038-1101/$ - see

  16. Effects of AlN buffer layers on the structural and the optical properties of GaN epilayers grown on Al{sub 2}O{sub 3} substrates by using plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Heechang; Lee, Seungjoo; Kumar, Sunil; Kang, Taewon [Dongguk University, Seoul (Korea, Republic of); Lee, Namhyun; Kim, Taewhan [Hanyang University, Seoul (Korea, Republic of)

    2014-04-15

    GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substrates by using plasma-assisted molecular-beam epitaxy. The GaN epilayer with an AlN buffer layer was much smaller than the GaN epilayer without an AlN buffer layer. The crystal quality of the GaN active layer was improved by utilizing an AlN layer, which acted as a nucleation layer. The reduced defect density promoted GaN coalition. The double-crystal rocking curves and the photoluminescence spectra showed that the GaN epilayer grown on a 4-nm AlN buffer layer had the best quality among the several kinds of samples. The photoluminescence intensity of the GaN epilayer which is related to the density of the crystal defects was lower when an AlN buffer layer was used the thin AlN nucleation layer protected against stain propagation. These results indicate that GaN epilayers grown on AIN buffer layers hold promise for applications in short-wavelength optoelectronic devices.

  17. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

    Science.gov (United States)

    El-Zammar, G.; Khalfaoui, W.; Oheix, T.; Yvon, A.; Collard, E.; Cayrel, F.; Alquier, D.

    2015-11-01

    Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiOx) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H3PO4 at 120 °C for AlN and in HF (10%) for SiOx. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

  18. Ferromagnetism in Cr-doped passivated AlN nanowires

    KAUST Repository

    Kanoun, Mohammed

    2014-01-01

    We apply first principles calculations to predict the effect of Cr doping on the electronic and magnetic properties of passivated AlN nanowires. We compare the energetics of the possible dopant sites and demonstrate the favorable configuration ferromagnetic ordering. The charge density of the pristine passivated AlN nanowires is used to elucidate the bonding character. Spin density maps demonstrate an induced spin polarization for N atoms next to dopant atoms, though most of the magnetism is carried by the Cr atoms. Cr-doped AlN nanowires turn out to be interesting for spintronic devices. © 2014 the Partner Organisations.

  19. Mechanism and kinetics analysis of AlN combustion synthesis

    Institute of Scientific and Technical Information of China (English)

    郑永挺; 张宇民; 赫晓东; 刘长青

    2004-01-01

    Mechanism of AlN combustion synthesis was studied by DSC analysis and "quenching" experiment of combustion wave. In preheating region, Al powder melted at 660 ℃ and became spherical because of surface tension. In reaction region, Al volatilized rapidly at 1 000 ℃ and Al vapor reacted with N2 to form AlN, which nucleated and grew on the surface of AlN formed precedently as a diluent. Based on the experiment analysis,kinetics equations and modeling were established. Analysis showed the dramatic effect of temperature, aluminum particle size and nitrogen pressure on the reaction speed.

  20. Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    Lung-Chien Chen

    2012-01-01

    Full Text Available This study investigates an aluminum nitride (AlN nanorod structure sputtered by glancing angle deposition (GLAD and its application as a buffer layer for GaN-based light-emitting diodes (LEDs that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.

  1. Thermoluminescence properties of AlN ceramics

    DEFF Research Database (Denmark)

    Trinkler, L.; Christensen, P.; Agersnap Larsen, N.

    1998-01-01

    The paper describes thermoluminescence (TL) properties of AlN:Y2O3 ceramics irradiated with ionising radiation. A high TL sensitivity of AlN:Y2O3 ceramics to radiation encouraged a study of the AlN ceramics for application as a dosimetric material. The paper presents experimental data on: glow...... curve, emission spectrum, dose response, energy dependence, influence of heating rate and fading rate. The measured TL characteristics were compared with those of well-known, widely used TLDs, i.e. LiF:Mg,Ti, LiF:Mg,Cu,P and Al2O3:C. It is concluded that AlN:Y2O3 ceramics showing a radiation sensitivity...

  2. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    Science.gov (United States)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ˜5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  3. Fabrication and convergent X-ray nanobeam diffraction characterization of submicron-thickness SrTiO3 crystalline sheets

    Directory of Open Access Journals (Sweden)

    J. A. Tilka

    2016-12-01

    Full Text Available The creation of thin SrTiO3 crystals from (001-oriented SrTiO3 bulk single crystals using focused ion beam milling techniques yields sheets with submicron thickness and arbitrary orientation within the (001 plane. Synchrotron x-ray nanodiffraction rocking curve widths of these SrTiO3 sheets are less than 0.02°, less than a factor of two larger than bulk SrTiO3, making these crystals suitable substrates for epitaxial thin film growth. The change in the rocking curve width is sufficiently small that we deduce that dislocations are not introduced into the SrTiO3 sheets. Observed lattice distortions are consistent with a low concentration of point defects.

  4. Fabrication and convergent X-ray nanobeam diffraction characterization of submicron-thickness SrTiO3 crystalline sheets

    Science.gov (United States)

    Tilka, J. A.; Park, J.; Sampson, K. C.; Cai, Z.; Evans, P. G.

    2016-12-01

    The creation of thin SrTiO3 crystals from (001)-oriented SrTiO3 bulk single crystals using focused ion beam milling techniques yields sheets with submicron thickness and arbitrary orientation within the (001) plane. Synchrotron x-ray nanodiffraction rocking curve widths of these SrTiO3 sheets are less than 0.02°, less than a factor of two larger than bulk SrTiO3, making these crystals suitable substrates for epitaxial thin film growth. The change in the rocking curve width is sufficiently small that we deduce that dislocations are not introduced into the SrTiO3 sheets. Observed lattice distortions are consistent with a low concentration of point defects.

  5. AlN Based Extreme Ultraviolet (EUV) Detectors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I project is to investigate the feasibility for achieving EUV detectors for space applications by exploiting the ultrahigh bandgap semiconductor - AlN. We...

  6. Broadband dielectric response of AlN ceramic composites

    Directory of Open Access Journals (Sweden)

    Iryna V. Brodnikovska

    2014-03-01

    Full Text Available Aluminium nitride (AlN is considered as a substrate material for microelectronic applications. AlN ceramic composites with different amount of TiO2 (up to 4 vol.% were obtained using hot pressing at different sintering temperature from 1700 to 1900 °C. It was shown that milling of the raw AlN powder has strongly influence on sintering and improves densification. Broadband dielectric spectroscopy was used as a nondestructive method for monitoring of the ceramic microstructures. TiO2 additive affects the key properties of AlN ceramics. Thus, porosity of 0.1 %, dielectric permeability of σ = 9.7 and dielectric loss tangent of tanδ = 1.3·10-3 can be achieved if up to 2 vol.% TiO2 is added.

  7. Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Lin Zhi-Yu; Hao Yue; Zhang Jin-Cheng; Zhou Hao; Li Xiao-Gang; Meng Fan-Na; Zhang Lin-Xia; Ai Shan; Xu Sheng-Rui; Zhao Yi

    2012-01-01

    In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers.The buffer layer consists of a low-temperature (LT) AlN layer and a high-temperature (HT) AlN layer that are grown at 600 ℃ and 1000 ℃,respectively.It is observed that the thickness of the LT-AlN layer drastically influences the quality of GaN thin film,and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film.The reason for the improved properties is discussed in this paper.

  8. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

    Science.gov (United States)

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-03

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  9. Thick detection zone single-photon avalanche diode fabricated in 0.35 μm complementary metal-oxide semiconductors

    Science.gov (United States)

    Steindl, Bernhard; Enne, Reinhard; Zimmermann, Horst

    2015-05-01

    An avalanche photodiode (APD) fabricated in 0.35 μm high-voltage complementary metal-oxide semiconductor (CMOS) technology, which was originally optimized for linear mode applications, is characterized in Geiger mode operation. This work shows that the used design concept is also suitable for single-photon detection applications and achieves a photon detection efficiency of 22.1% at 785 nm due to a thick detection zone and 3.5 V excess bias. At this operation point, the single-photon APD achieves good results regarding afterpulsing probability (3.4%) and dark count rate (46 kHz) with respect to the large active diameter of 86 μm.

  10. Improvement of the critical temperature of superconducting NbTiN and NbN thin films using the AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Shiino, Tatsuya; Shiba, Shoichi; Sakai, Nami; Yamamoto, Satoshi [Department of Physics, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Yamakura, Tetsuya [Institute of Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Ten-nodai, Tsukuba, Ibaraki 305-8577 (Japan); Jiang, Ling [College of Information Science and Technology, Nanjing Forestry University, Nanjing 210037, Jiangsu (China); Uzawa, Yoshinori [National Astronomical Observatory of Japan, Osawa, Mitaka, Tokyo 181-8588 (Japan); Maezawa, Hiroyuki, E-mail: shiino@taurus.phys.s.u-tokyo.ac.j [Solar-Terrestrial Environment Laboratory, Nagoya University, Furo-cho, Chigusa-ku, Nagoya 464-8602 (Japan)

    2010-04-15

    Thin superconducting NbTiN and NbN films with a few nm thickness are used in various device applications including in hot electron bolometer mixers. Such thin films have lower critical temperature (T{sub c}) and higher resistivity than corresponding bulk materials. In an effort to improve them, we have investigated an effect of the AlN buffer layer between the film and the substrate (quartz or soda lime glass). The AlN film is deposited by DC magnetron sputtering, and the process condition is optimized so that the x-ray diffraction intensity from the 002 surface of wurtzite AlN becomes the highest. By use of this well-characterized buffer layer, T{sub c} and the resistivity of the NbTiN film with a few nm thickness are remarkably increased and decreased, respectively, in comparison with those without the buffer layer. More importantly, the AlN buffer layer is found to be effective for NbN. With the AlN buffer layer, T{sub c} is increased from 7.3 to 10.5 K for the 8 nm NbN film. The improvement of T{sub c} and the resistivity originates from the good lattice matching between the 002 surface of AlN and the 111 surface of NbTiN or NbN, which results in better crystallization of the NbTiN or NbN film. This is further confirmed by the x-ray diffraction measurement.

  11. High strain-rate deformation fabrics characterize a kilometers-thick Paleozoic fault zone in the Eastern Sierras Pampeanas, central Argentina

    Science.gov (United States)

    Whitmeyer, Steven J.; Simpson, Carol

    2003-06-01

    High strain rate fabrics that transgress a crustal depth range of ca. 8-22 km occur within a major Paleozoic fault zone along the western margin of the Sierras de Córdoba, central Argentina. The NNW-striking, east-dipping 'Tres Arboles' fault zone extends for at least 250 km and separates two metamorphic terranes that reached peak temperatures in the middle Cambrian and Ordovician, respectively. Exposed fault zone rocks vary from a 16-km-thickness of ultramylonite and mylonite in the southern, deepest exposures to 520 °C. Reaction-enhanced grain size reduction and grain boundary sliding were the predominant deformation mechanisms in these high strain rate rocks. Ultramylonites in the intermediate depth section also contain evidence for grain boundary sliding and diffusional mass transfer, although overprinted by late stage chlorite. In the shallowest exposed section, rocks were deformed at or near to the brittle-ductile transition to produce mylonite, cataclasite, shear bands and pseudotachylyte. The overall structure of the Tres Arboles zone is consistent with existing fault zone models and suggests that below the brittle-ductile transition, strain compatibility may be accommodated through very thick zones of high temperature ultramylonite.

  12. The mechanical and tribological properties of UHMWPE loaded ALN after mechanical activation for joint replacements.

    Science.gov (United States)

    Gong, Kemeng; Qu, Shuxin; Liu, Yumei; Wang, Jing; Zhang, Yongchao; Jiang, Chongxi; Shen, Ru

    2016-08-01

    Ultra-high molecular weight polyethylene (UHMWPE) loaded with alendronate sodium (ALN) has tremendous potential as an orthopeadic biomaterial for joint replacements. However, poor mechanical and tribological properties of UHMWPE-ALN are still obstacle for further application. The purpose of this study was to investigate the effect and mechanism of mechanical activation on mechanical and tribological properties of 1wt% ALN-loaded UHMWPE (UHMWPE-ALN-ma). In this study, tensile test, small punch test and reciprocating sliding wear test were applied to characterize the mechanical and tribological properties of UHMWPE-ALN-ma. Scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) were employed to characterize UHMWPE-ALN-ma. Tensile test and small punch test showed that Young׳s modulus, tensile strength and work-to-failure (WTF) of UHMWPE-ALN-ma increased significantly compared to those of UHMWPE-ALN. The friction coefficients and wear factors of UHMWPE-ALN-ma both decreased significantly compared to those of UHMWPE-ALN. Mechanical activation obviously reduced type 1 (void) and type 2 (the disconnected and dislocated machining marks) fusion defects of UHMWPE-ALN-ma, which were revealed by SEM images of freeze fracture surfaces after etching and lateral surfaces of specimens after extension to fracture, respectively. It was attributed to peeled-off layers and chain scission of molecular chains of UHMWPE particles after mechanical activation, which were revealed by SEM images and FTIR spectra of UHMWPE-ALN-ma and UHMWPE-ALN, respectively. Moreover, EDS spectra revealed the more homogeneous distribution of ALN in UHMWPE-ALN-ma compared to that of UHMWPE-ALN. The present results showed that mechanical activation was a potential strategy to improve mechanical and tribological properties of UHMWPE-ALN-ma as an orthopeadic biomaterial for joint replacements.

  13. Puente Alnö – Suecia

    Directory of Open Access Journals (Sweden)

    Editorial, Equipo

    1974-07-01

    Full Text Available This bridge that joins the island of Alnô with the peninsula near the port of Sundsvall In the north of Sweden is one of the many of prestressed concrete that have been constructed lately all over the world with the system of successive corbels. Until recently it was the longest bridge in the country and distinguishes itself by the elegance and slenderness of its longer arches and by the deep foundation system used to construct the four central bridge piers. It has been planned and constructed by Skanska Cementgjuteriet, a firm that is specializing in this type of structure.Este puente, que une la isla de Alno con la península, cerca del puerto de Sundsvall, en el norte de Suecia, es uno de los muchos de hormigón pretensado que se han construido últimamente en todo el mundo por el sistema de voladizos sucesivos. Hasta hace poco era el puente más largo del país y destaca por la elegancia y esbeltez de sus arcos más largos y por el sistema de cimentación profunda empleado para construir las cuatro pilas centrales. Ha sido proyectado y construido por Skanska Cementgjuteriet, empresa que se ha especializado en este tipo de estructura.

  14. The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Lei; Liu, Lei; Wang, Lei; Li, Ding; Song, Jie; Liu, Ningyang; Chen, Weihua; Wang, Yuzhou; Yang, Zhijian; Hu, Xiaodong [Peking University, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Beijing (China)

    2012-09-15

    AlN with different thicknesses were grown as interlayers (ILs) between GaN and p-type Al{sub 0.15}Ga{sub 0.85}N/GaN superlattices (SLs) by metal organic vapor phase epitaxy (MOVPE). It was found that the edge-type threading dislocation density (TDD) increased gradually from the minimum of 2.5 x 10{sup 9} cm{sup -2} without AlN IL to the maximum of 1 x 10{sup 10} cm{sup -2} at an AlN thickness of 20 nm, while the screw-type TDD remained almost unchanged due to the interface-related TD suppression and regeneration mechanism. We obtained that the edge-type dislocations acted as acceptors in p-type Al{sub x} Ga{sub 1-x} N/GaN SLs, through the comparison of the edge-type TDD and hole concentration with different thicknesses of AlN IL. The Mg activation energy was significantly decreased from 153 to 70 meV with a 10-nm AlN IL, which was attributed to the strain modulation between AlGaN barrier and GaN well. The large activation efficiency, together with the TDs, led to the enhanced hole concentration. The variation trend of Hall mobility was also observed, which originated from the scattering at TDs. (orig.)

  15. Improved thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Yan-Qiang; Li, Xin; Zhu, Lin; Cao, Zheng-Yi; Wu, Di; Li, Ai-Dong, E-mail: adli@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

    2015-01-15

    The thermal stability and electrical properties of atomic layer deposited HfO{sub 2}/AlN high-k gate dielectric stacks on GaAs were investigated. Compared to HfO{sub 2}/Al{sub 2}O{sub 3} gate dielectric, significant improvements in interfacial quality as well as electrical characteristics after postdeposition annealing are confirmed by constructing HfO{sub 2}/AlN dielectric stacks. The chemical states were carefully explored by the x-ray photoelectron spectroscopy, which indicates the AlN layers effectively prevent from the formation of defective native oxides at elevated temperatures. In addition, it is found that NH{sub 3} plasma during AlN plasma-enhanced atomic layer deposition also has the self-cleaning effect as Al(CH{sub 3}){sub 3} in removing native oxides. The passivating AlN layers suppress the formation of interfacial oxide and trap charge, leading to the decrease of capacitance equivalent thickness after annealing. Moreover, HfO{sub 2}/AlN/GaAs sample has a much lower leakage current density of 2.23 × 10{sup −4} A/cm{sup 2} than HfO{sub 2}/Al{sub 2}O{sub 3}/GaAs sample of 2.58 × 10{sup −2} A/cm{sup 2}. For the HfO{sub 2}/AlN/GaAs sample annealed at 500 °C, it has a lowest interface trap density value of 2.11 × 10{sup 11} eV{sup −1} cm{sup −2}. These results indicate that adopting HfO{sub 2}/AlN dielectric stacks may be a promising approach for the realization of high quality GaAs-based transistor devices.

  16. Comparison between AlN thin films with different crystal orientations for MEMS applications

    Science.gov (United States)

    Ababneh, A.; Marchand, G.; Seidel, H.; Hernando, J.; Sánchez-Rojas, J. L.; Sökmen, Ü.; Peiner, E.; Schmid, U.

    2009-05-01

    Aluminium nitride (AlN) reactively sputter deposited from an aluminium target is an interesting compound material due to its CMOS compatible fabrication process and its piezoelectric properties. The crystal structure obtained during sputtering is a very importance criterion to obtain a good piezoelectric performance. To demonstrate this, we focused our investigations on two types of films. The first type shows a good c- axis orientation with round grain geometry. The second type is (101) oriented having a triangular grain shape. For measuring the out-of-plane displacements for dij determination, a MSV 400 Polytec scanning laser Doppler vibrometer was used. To obtain the piezoelectric constants d33 and d31 a fitting procedure between experimental and theoretical predicted results is used. Effective values for d33 and d31 in c-axis oriented films are about 3.0 pm/V and -1.0 pm/V, respectively. By contrast, films with (101) orientation show a lower effective longitudinal piezoelectric coefficients, consistent with this different orientation. Finally, both types of AlN layers were deposited on 640 μm long micro-cantilevers. The average displacement of the first mode on the vertical axis was about 12 nm for the film with good c -axis orientation and 0.3 nm for that with (101)- orientation when applying the same excitation.

  17. Growth and microstructure of AlN whiskers and dendrites

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    AlN whiskers or dendrites were synthesized with a sublimation-recrystallization method by using Al, AlN powders and some additives as raw materials. Whiskers with different sizes that featured high purity and good crystallinity were obtained by controlling temperature and gas supersaturation in the reaction container. The whiskers were described as long and straight single crystals of approximately 1-30 (m in diameter by the centimeter range in length. However, AlN dendrites were about 1 mm in diameter by 0.5 cm in length, and showed an obviously preferential growth orientation, i.e., perpendicular to and planes. It is concluded that the whiskers or dendrites grow via the vapor-solid mechanism.

  18. Arc Discharge Synthesis and Photoluminescence of 3D Feather-like AlN Nanostructures

    Directory of Open Access Journals (Sweden)

    Zou ZY

    2011-01-01

    Full Text Available Abstract A complex three-dimensional (3D feather-like AlN nanostructure was synthesized by a direct reaction of high-purity Al granules with nitrogen using an arc discharge method. By adjusting the discharge time, a coral-like nanostructure, which evolved from the feather-like nanostructure, has also been observed. The novel 3D feather-like AlN nanostructure has a hierarchical dendritic structure, which means that the angle between the trunk stem and its branch is always about 30° in any part of the structure. The fine branches on the surface of the feather-like nanostructure have shown a uniform fish scale shape, which are about 100 nm long, 10 nm thick and several tens of nanometers in width. An alternate growth model has been proposed to explain the novel nanostructure. The spectrum of the feather-like products shows a strong blue emission band centered at 438 nm (2.84 eV, which indicates their potential application as blue light-emitting diodes.

  19. Inversion domains in AlN grown on (0001) sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Jasinski, J.; Liliental-Weber, Z.; Paduano, Q.S.; Weyburne, D.W.

    2003-08-25

    Al-polarity inversion domains formed during AlN layer growth on (0001) sapphire were identified using transmission electron microscopy (TEM). They resemble columnar inversion domains reported for GaN films grown on (0001) sapphire. However, for AlN, these columns have a V-like shape with boundaries that deviate by 2 {+-} 0.5{sup o} from the c-axis. TEM identification of these defects agrees with the post-growth surface morphology as well as with the microstructure revealed by etching in hot aqueous KOH.

  20. AlN Bandgap Temperature Dependence from its Optical Properties

    Science.gov (United States)

    2008-06-07

    AlN bandgap temperature dependence from its optical properties E. Silveira a,, J.A. Freitas b, S.B. Schujman c, L.J. Schowalter c a Depto. de Fisica ...range. The energy gap in semiconductors in general changes due to contributions from the electron–phonon interaction and due to the lattice thermal

  1. PEALD AlN: controlling growth and film crystallinity

    NARCIS (Netherlands)

    Banerjee, Sourish; Aarnink, Antonius A.I.; Kruijs, van de Robbert; Kovalgin, Alexey Y.; Schmitz, Jurriaan

    2015-01-01

    We report on the growth kinetics and material properties of aluminium nitride (AlN) films deposited on Si(111), with plasma enhanced atomic layer deposition (PEALD). Tri-methyl aluminium (TMA) and NH3-plasma were used as the precursors. The ALD window was identified in terms of the process parameter

  2. High temperature electrical transport study of Si-doped AlN

    Science.gov (United States)

    Contreras, Sylvie; Konczewicz, Leszek; Ben Messaoud, Jaweb; Peyre, Hervé; Al Khalfioui, Mohamed; Matta, Samuel; Leroux, Mathieu; Damilano, Benjamin; Brault, Julien

    2016-10-01

    Electrical transport (resistivity and Hall Effect) have been studied in silicon doped aluminum nitride (AlN) thick epitaxial layers from 250 K up to 1000 K. The investigated samples, grown by molecular beam epitaxy were characterized by n-type conduction with an ambient temperature free carrier concentration of about ∼ 1 × 1015 cm-3. The donor level, situated about 250 meV below the conduction band edge, was found to be responsible for the experimentally observed increase of free carrier concentration with temperature. The temperature dependence of carrier mobility has been analyzed in the framework of a multimode scattering model. In the investigated samples the main scattering mechanism is supposed to be dislocation scattering.

  3. Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Moreira, Milena A. [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala, Sweden and School of Electrical and Computer Engineering, University of Campinas, CEP 13.083-852 Campinas-SP (Brazil); Törndahl, Tobias; Katardjiev, Ilia; Kubart, Tomas, E-mail: tomas.kubart@angstrom.uu.se [Department of Solid State Electronics, Ångström Laboratory, Uppsala University, Box 534, SE-752 21 Uppsala (Sweden)

    2015-03-15

    Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

  4. Fabrication of interdigitated back-contact silicon heterojunction solar cells on a 53-µm-thick crystalline silicon substrate by using the optimized inkjet printing method for etching mask formation

    Science.gov (United States)

    Takagishi, Hideyuki; Noge, Hiroshi; Saito, Kimihiko; Kondo, Michio

    2017-04-01

    Inkjet-printing-based fabrication process of the interdigitated back-contact silicon heterojunction solar cells has the potential to reduce the manufacturing costs because of its low machine and material costs and its applicability to thinner fragile silicon substrates than 100 µm. In this study, ink and printing parameters were investigated to obtain the desirable fine patterns and the resultant accuracy of the linewidths was less than ±0.05 mm on a flat surface. The completed cells using inkjet-printing showed almost the same performance of that fabricated by photolithography. In addition, flexible and free-standing cell on a 53-µm-thick Si substrate has been successfully fabricated.

  5. Development of automated welding processes for field fabrication of thick-walled pressure vessels: electron beam method. Seventh quarterly report, April 1-June 30, 1979. [8-in. thick 2 1/4 Cr-1 Mo plate

    Energy Technology Data Exchange (ETDEWEB)

    Weber, C.M.

    1979-01-01

    A total of 449 experimental welds have been made to date. Partial penetration welding procedures capable of producing defect-free, 4-inch deep welds have been developed in the horizontal position. The travel speed that can be acceptably used for partial penetration welding of 2 1/4 Cr-1 Mo is larger for 6-inch thick plate than for 8-inch thick plate. Although defect-free welds can be made with soft vacuum conditions, hard vacuum conditions produce the most reliable performance. A procedure for welding an 8-inch thick joint has been developed. A small test plate was welded, radiographed, and cross sectioned and found to be acceptable. A large 8-inch thick test plate was welded and found to contain porosity. Difficulties in uniformly moving this large plate appear to be responsible for the porosity encountered. A mechanical modification to the welding equipment is being made and the large plate will be welded again. 3 figures.

  6. Fabrication of YBCO/YSZ and YBCO/MgO thick films using electrophoretic deposition with top-seeded melt growth process

    Institute of Scientific and Technical Information of China (English)

    Zhu Ya-Bin; Zhou Yue-Liang; Wang Shu-Fang; Liu Zhen; Zhang Qin; Chen Zheng-Hao; Lü Hui-Bin; Yang Guo-Zhen

    2004-01-01

    Superconducting thick films were grown on single crystals MgO and YSZ by electrophoretic deposition with Y2BaCuOs(Y211) addition. YBCO thick films were then accomplished by sintering the precursor films above the peritectic temperature. Single crystals of MgO (3×3×0.5mm3) were used as top-seed to control crystal structure of the thick films. As shown by scanning electron microscopy, the morphologies of YBCO/YSZ and YBCO/MgO thick films are spherulitic texture and platelet type. The critical temperature is ~89 K for the YBCO/YSZ thick film; the onset transition temperature is 86.4 K and the transition width is ~3 K for YBCO/MgO thick film. The critical current densities (as determined by Bean model) are, in A/cm2, 3870 (77K) for YBCO/YSZ thick films and 2399 (77K) for YBCO/MgO thick films, which are comparable to the best Jc reported of the thick films prepared by the same method.

  7. AlN hollow-nanofilaments by electrospinning

    Science.gov (United States)

    Gerges, Tony; Salles, Vincent; Bernard, Samuel; Journet, Catherine; Jaurand, Xavier; Chiriac, Rodica; Ferro, Gabriel; Brioude, Arnaud

    2015-02-01

    We present for the first time an original method to elaborate AlN nanofilaments (NFs) by using a preceramic-based electrospinning process. Initially, an Al-containing precursor (poly(ethylimino)alane) is mixed with an organic spinnable polymer to be electrospun and generate polymeric filaments with a homogeneous diameter. A ceramization step at 1000 °C under ammonia and a crystallization step at 1400 °C under nitrogen are performed to get the final product made of AlN NFs with a diameter ranging from 150 to 200 nm. Studies carried out by high resolution electron microscopy and 3D tomography show their regular morphology, with high chemical purity and polycrystalline nature.

  8. Thermal conductivity of single crystal and ceramic AlN

    Science.gov (United States)

    AlShaikhi, A.; Srivastava, G. P.

    2008-04-01

    We have applied the Callaway theory and used a detailed account of three-phonon scattering processes to calculate the thermal conductivity of three AlN single crystal samples containing different amounts of oxygen and two AlN ceramic samples with different grain sizes and oxygen contamination levels. The N-drift contribution to the total conductivity has been quantified. The influence on the thermal conductivity of oxygen-related defects, and grain boundaries in ceramic samples, has been investigated. The theoretical results obtained from this work are in good agreement with available experimental data. Our calculations suggest that the "effective" boundary length is greater than the reported grain size for each of the two ceramic samples studied by Watari et al. [J. Mater. Res. 17, 2940 (2002)].

  9. Luminescence, vibrational and XANES studies of AlN nanomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Bellucci, S. [INFN-Laboratori Nazionali di Frascati, Via E. Fermi 40, 00044 Frascati (Italy); Popov, A.I. [Institut Laue-Langevin, 6 rue Jules Horowitz, 38042 Grenoble (France); Institute for Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga (Latvia); Balasubramanian, C. [INFN-Laboratori Nazionali di Frascati, Via E. Fermi 40, 00044 Frascati (Italy); Department of Environmental, Occupational and Social Medicine, University of Rome Tor Vergata, 00133 Rome (Italy); Cinque, G.; Marcelli, A. [INFN-Laboratori Nazionali di Frascati, Via E. Fermi 40, 00044 Frascati (Italy); Karbovnyk, I. [Ivan Franko National University of Lviv, Faculty of Electronics, 107 Tarnavskogo str., 79017 Lviv (Ukraine)], E-mail: ivan_karbovnyck@yahoo.com; Savchyn, V.; Krutyak, N. [Ivan Franko National University of Lviv, Faculty of Electronics, 107 Tarnavskogo str., 79017 Lviv (Ukraine)

    2007-04-15

    The paper reports comparative studies on synthesized aluminium nitride nanotubes, nanoparticles and commercially available micron-sized AlN powder using different spectroscopic techniques: cathodoluminescence measurements (CL), X-ray absorption near edge spectroscopy (XANES) and Fourier-transform infrared spectroscopy (FTIR). Crucial distinctions in CL spectra are observed for nano- and microsized aluminium nitride powders; systematic shift of the IR absorption maximum has been detected for nanostructured aluminium nitride as compared to commercial samples. Through XANES experiments on Al K-edge structural differences between nano- and bulk AlN are revealed, intensity of features in absorption spectra has been found to be a function of wurtzite and zincblend phases amount in nanostructured samples.

  10. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

    Directory of Open Access Journals (Sweden)

    Weihuang Yang

    2013-05-01

    Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

  11. Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Bing, E-mail: zhoubing@tyut.edu.cn [Research institute of surface engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Liu, Zhubo; Tang, Bin [Research institute of surface engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Rogachev, A.V. [Department of Physics, Gomel State University, Gomel 246019 (Belarus)

    2015-01-30

    Highlights: • DLC and CN{sub x} bilayers with Al (AlN) interlayer were fabricated by cathode arc technique. • Complete diffusion of Al and C atoms occurs at the interface of Al/DLC (CN{sub x}) bilayer. • Al/CN{sub x} bilayer presents a higher content of Csp{sup 3}/Csp{sup 2} bonds. • The hardness of Al/DLC bilayer decreases but increases for the other bilayers. • Morphology of the bilayers was explained by growth mechanism of DLC and surface state of substrate. - Abstract: Diamond-like carbon (DLC) and carbon nitride (CN{sub x}) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CN{sub x} bilayer. Al interlayer induces the increase of the size and ordering of Csp{sup 2} clusters in the films but AlN interlayer increases the disordering degree of Csp{sup 2} clusters. XPS results showed that a higher content of Csp{sup 3}/Csp{sup 2} bonds presents in the Al/CN{sub x} bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CN{sub x}) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CN{sub x} bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain

  12. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  13. AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

    Science.gov (United States)

    Gautier, S.; Aggerstam, T.; Pinos, A.; Marcinkevičius, S.; Liu, K.; Shur, M.; O'Malley, S. M.; Sirenko, A. A.; Djebbour, Z.; Migan-Dubois, A.; Moudakir, T.; Ougazzaden, A.

    2008-11-01

    Al xGa 1-xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.

  14. Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

    Science.gov (United States)

    Okumura, H.; Hamaguchi, H.; Koizumi, T.; Balakrishnan, K.; Ishida, Y.; Arita, M.; Chichibu, S.; Nakanishi, H.; Nagatomo, T.; Yoshida, S.

    1998-06-01

    Cubic GaN, AlGaN and AlN epilayers were grown on 3C-SiC(0 0 1) substrates by gas source molecular beam epitaxy using radio-frequency N 2 plasma containing atomic nitrogen species. Due to the enhancement of growth rate by this plasma source, cubic GaN epilayers with the thickness of several micrometers were obtained, and the quality of epilayers was so much improved that they showed an X-ray diffraction peak width as small as 9 min. Cubic Al xGa 1- xN and cubic AlN epilayers were also grown, and the variations of X-ray diffraction peak position and emission energy were observed according to the Al content.

  15. Ionic versus metallic bonding in AlnNam and AlnMgm (m ≤ 3, n + m ≤ 15) clusters

    Science.gov (United States)

    Grover, Cameron J.; Reber, Arthur C.; Khanna, Shiv N.

    2017-06-01

    First principles electronic structure studies on the ground state geometries, stability, and the electronic structure of AlnNam and AlnMgm (m ≤ 3, n + m ≤ 15) clusters have been carried out to examine the nature of bonding between Na or Mg and Al. Identifying whether the bonding is ionic or metallic in bulk materials is typically straightforward; however, in small clusters where quantum confinement is important, the nature of bonding may become unclear. We have performed a critical analysis of the bonding in these bimetallic clusters using charge analysis, electrical dipole moments, hybridization of the atomic orbitals, the Laplacian of the charge density at the bond critical points, and the change in the bonding energy between neutral and anionic forms of the cluster. For NanAlm clusters, we find that the Na binding is primarily ionic, while the bonding in AlnMgm is primarily metallic. We find that the Mulliken population of the 3p orbital of Na and Mg can provide a rapid assessment of the nature of bonding. We also find that the Hirshfeld charge and dipole moments are effective indicators, when placed in context. We found that the Laplacian of the charge density at the bond critical points can be misleading in identifying whether the bonding is ionic or metallic in small clusters.

  16. Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

    Science.gov (United States)

    Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

    2017-02-01

    Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

  17. Differences in the thickness of mouthguards fabricated from ethylene vinyl acetate copolymer sheets with differently arranged v-shaped grooves: part 2 - effect of shape on the working model.

    Science.gov (United States)

    Takahashi, Mutsumi; Koide, Kaoru; Mizuhashi, Fumi

    2014-12-01

    The aim of this study was to evaluate the change in thickness of a working model mouthguard sheet due to different shape. Mouthguards were fabricated with ethylene vinyl acetate (EVA) sheets (4.0 mm thick) using a vacuum-forming machine. Two shapes of the sheet were compared: normal sheet or v-shaped groove 10-40 mm from the anterior end. Additionally, two shapes of the working model were compared; the basal plane was vertical to the tooth axis of the maxillary central incisor (condition A), and the occlusal plane was parallel to the basal plane (condition B). Sheets were heated until they sagged 15 mm below the clamp. Postmolding thickness was determined for the incisal portion (incisal edge and labial surface) and molar portion (cusp and buccal surface). Differences in the change in thickness due to the shape of the sheets and model were analyzed using two-way anova followed by a Bonferroni's multiple comparison tests. The thickness of the mouthguard sheet with v-shaped grooves was more than that of the normal sheet at all measuring points under condition A and condition B (P < 0.01). The thickness of condition B was less than that of condition A, there the incisal portion in the normal sheet and the incisal edge in the sheet with v-shaped grooves (P < 0.01). The present results suggested that thickness after molding was secured by the use of the sheet with v-shaped grooves. In particular, the model with the undercut on the labial surface may be clinically useful.

  18. Fabrication of AlN-TiC/Al composites by gas injection processing

    Institute of Scientific and Technical Information of China (English)

    YU Huashun; CHEN Hongmei; MA Rendian; MIN Guanghui

    2006-01-01

    The fabrication of AlN-TiC/Al composites by carbon-and nitrogen-containing gas injection into Al-Mg-Ti melts was studied. It was shown that AlN and TiC particles could be formed by the in situ reaction of mixture gas (N2+C2H2+NH3) with Al-Mg-Ti melts. The condition for the formation of AlN was that the treatment temperature must be higher than 1373 K, and the amounts of AlN and TiC increased with the increase of the treatment temperature and the gas injection time.It was considered that AlN was formed by the direct reaction of Al with nitrogen-containing gas at the interface of the gas bubble and the melt. However, the mechanism of TiC formation is a combination mechanism of solution-precipitation and solid-liquid reaction.

  19. Fabrication and Characterization of Brush-Printed p-Type Bi0.5Sb1.5Te3 Thick Films for Thermoelectric Cooling Devices

    Science.gov (United States)

    Wu, Han; Liu, Xing; Wei, Ping; Zhou, Hong-Yu; Mu, Xin; He, Dan-Qi; Zhu, Wan-Ting; Nie, Xiao-Lei; Zhao, Wen-Yu; Zhang, Qing-Jie

    2016-11-01

    Bismuth telluride alloys are promising thermoelectric materials used for portable and wearable cooling devices due to their excellent thermoelectric properties near the ambient temperature. Here, a simple and cost-effective brush-printing technique, together with a subsequent annealing treatment, has been used to prepare Bi2Te3-based thick films and prototype devices. The composition, microstructure, and electrical properties of the brush-printed p-type Bi0.5Sb1.5Te3 thick films at different annealing temperatures are investigated. It is found that annealing temperature plays an important role in promoting densification and preventing the film from cracking, hence improving the electrical transport properties. The maximum power factor of the brush-printed thick films is 0.15 mW K-2 m-1 when annealed at 673 K for 4 h. A prototype thermoelectric device is manufactured by connecting the brush-printed p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.7Se0.3 thick films with Cu thick-film electrodes on an Al2O3 substrate. The cooling performance of the thermoelectric device is evaluated by measuring the temperature difference produced under applied currents.

  20. Strain-relaxation in NH{sub 3}-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates

    Energy Technology Data Exchange (ETDEWEB)

    Koyama, T.; Onuma, T.; Chichibu, S.F. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); NICP, ERATO, Japan Science and Technology Agency (JST), Kawaguchi 332-0012 (Japan); Sugawara, M.; Uchinuma, Y. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Kaeding, J.F.; Sharma, R. [Department of Materials Engineering, University of California, Santa Barbara, CA 93106 (United States); Nakamura, S. [NICP, ERATO, Japan Science and Technology Agency (JST), Kawaguchi 332-0012 (Japan); Department of Materials Engineering, University of California, Santa Barbara, CA 93106 (United States)

    2006-05-15

    Temporal evolution of surface morphology in AlN epilayers grown by NH{sub 3}-source molecular beam epitaxy on the GaN/(0001) Al{sub 2}O{sub 3} epitaxial templates was correlated with changes in the degree of the residual strain and the layer thickness. They began to crack for the thickness as thin as 10 nm. However, atomic-layer step-and-terrace surface structures were maintained for the thickness up to 32 nm. Tensile biaxial stress decreased with further increase in the thickness due to the lattice relaxation, which caused surface roughening. An 1580-nm-thick, nearly strain-compensated AlN epilayer, of which threading dislocation density was reduced down to 6 x 10{sup 9} cm{sup -2}, exhibited excitonic photoluminescence peaks at 6.002 and 6.023 eV at 9 K and a near-band-edge peak at 5.872 eV at 293 K. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Growth and characterization of piezoelectric AlN thin films for diamond-based surface acoustic wave devices

    Energy Technology Data Exchange (ETDEWEB)

    Benetti, M. [C.N.R. Istituto di Acustica ' O. M. Corbino' , Via del Fosso del Cavaliere 100, 00133 Rome (Italy); Cannata, D. [C.N.R. Istituto di Acustica ' O. M. Corbino' , Via del Fosso del Cavaliere 100, 00133 Rome (Italy); Di Pietrantonio, F. [C.N.R. Istituto di Acustica ' O. M. Corbino' , Via del Fosso del Cavaliere 100, 00133 Rome (Italy); Verona, E. [C.N.R. Istituto di Acustica ' O. M. Corbino' , Via del Fosso del Cavaliere 100, 00133 Rome (Italy)]. E-mail: enrico.verona@idac.rm.cnr.it; Generosi, A. [C.N.R. Istituto di Struttura della Materia, Via del Fosso del Cavaliere 100, 00133 Rome (Italy); Paci, B. [C.N.R. Istituto di Struttura della Materia, Via del Fosso del Cavaliere 100, 00133 Rome (Italy); Rossi Albertini, V. [C.N.R. Istituto di Struttura della Materia, Via del Fosso del Cavaliere 100, 00133 Rome (Italy)

    2006-02-21

    We report on the preparation and structural characterization of piezoelectric films of aluminium nitride onto diamond substrates. The samples were fabricated by sequential radio frequency reactive diode sputtering processes, carried out at various temperatures, in a head vacuum system starting from stechiometric targets. The structural characterization of the films was performed by energy dispersive X-ray diffraction analysis. The deposition temperature was found to play a relevant role to obtain highly textured films with the c-axis perpendicular to the substrate surface, as required by surface-acoustic-wave applications. In particular, a minimum substrate temperature of 300 deg. C was needed in order to obtain any internal order along the c-axis while, increasing the temperature, the AlN <002> orientation becomes preferential. The rocking curve analysis revealed a good crystalline quality of the AlN films whose degree of epitaxy can be well described by a linearly increasing function of the temperature at which the films are grown.

  2. MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.

    Science.gov (United States)

    E, Yanxiong; Hao, Zhibiao; Yu, Jiadong; Wu, Chao; Liu, Runze; Wang, Lai; Xiong, Bing; Wang, Jian; Han, Yanjun; Sun, Changzheng; Luo, Yi

    2015-12-01

    By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

  3. AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy.

    Science.gov (United States)

    Tamura, Yosuke; Hane, Kazuhiro

    2015-12-01

    AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec.

  4. Flexible Surface Acoustic Wave Device with AlN Film on Polymer Substrate

    Directory of Open Access Journals (Sweden)

    Jian Zhou

    2012-01-01

    Full Text Available Surface acoustic wave device with c-axis-oriented aluminum nitride (AlN piezoelectric thin films on polymer substrates can be potentially used for development of flexible sensors, flexible microfluidic applications, microsystems, and lab-on-chip systems. In this work, the AlN films have been successfully deposited on polymer substrates using the DC reactive magnetron-sputtering method at room temperature, and the XRD, SEM, and AFM methods reveal that low deposition pressure is beneficial to the highly c-axis-oriented AlN film on polymer substrates. Studies toward the development of AlN thin film-based flexible surface acoustic wave devices on the polymer substrates are initiated and the experimental and simulated results demonstrate the devices showing the acoustic wave velocity of 9000–10000 m/s, which indicate the AlN lamb wave.

  5. Ambient carbon dioxide capture by different dimensional AlN nanostructures: A comparative DFT study

    Science.gov (United States)

    Esrafili, Mehdi D.; Nurazar, Roghaye; Nematollahi, Parisa

    2016-08-01

    Strong binding of an isolated carbon dioxide molecule over three different aluminium nitride (AlN) nanostructures (nanocage, nanotube and nanosheet) is verified using density functional calculations. Equilibrium geometries, electronic properties, adsorption energies and thermodynamic stability of each adsorbed configuration are also identified. Optimized configurations are shown at least one corresponding physisorption and chemisorption of CO2 molecule over different AlN nanostructures. Also, the effect of chirality on the adsorption of CO2 molecule is studied over two different finite-sized zigzag (6,0) and armchair (4,4) AlN nanotubes. It is found that the electronic properties of the Al12N12 nanocage are more sensitive to the CO2 molecule than other AlN nanostructures. This indicates the significant potential of Al12N12 nanocage toward the CO2 adsorption, fixation and catalytic applications in contrast to other AlN nanostructures.

  6. Development of automated welding processes for field fabrication of thick-walled pressure vessels: electron beam method. Sixth quarterly report, January 1-March 31, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Weber, C.M.

    1979-01-01

    Research is reported of a project to develop and demonstrate an electron beam welding procedure for welding 8'' thick SA 387 Grade 22 Class 2 (2-1/4 Cr-1 Mo) steel. A total of 414 welds have been made to date. Partial penetration welding procedures capable of producing defect-free, 4'' welds have been developed in the horizontal position. Beam oscillation conditions strongly influence welding performance. Defect-free, partial penetration welds have been made at vacuum pressures of up to 30 microns. Several 8'' thick, defect-free welds have been made in the horizontal position. Attempts to produce defect-free, partial penetration welds in the vertical position have been unsuccessful.

  7. High quality MgB{sub 2} thick films and large-area films fabricated by hybrid physical-chemical vapor deposition with a pocket heater

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S F; Chen, Ke; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, C-H; Soukiassian, A; DeFrain, R; Redwing, J M; Schlom, D G [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D R [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States)], E-mail: suw16@psu.edu

    2008-08-15

    A hybrid physical-chemical vapor deposition process using a pocket heater was developed for the growth of high quality epitaxial large-area MgB{sub 2} thin films and c-axis textured MgB{sub 2} thick films. This technique is able to independently control the substrate and Mg source temperatures and maintain sufficient Mg overpressure to ensure phase stability. The two-inch large-area MgB{sub 2} thin films showed uniform superconducting properties with the superconducting transition temperature T{sub c} of about 40 K, residual resistivity ratio (RRR) of about 10, and critical current density J{sub c} of about 10{sup 7} A cm{sup -2} (0 T, 5 K). The thick films ({approx}10 {mu}m) on sapphire substrates showed a maximum T{sub c} of 40 K and RRR of 15, and a J{sub c} of 1.6 x 10{sup 6} A cm{sup -2} at low applied magnetic fields even at 20 K. High quality thick films also have been obtained on metal substrates.

  8. Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

    Energy Technology Data Exchange (ETDEWEB)

    Chae, Kyo-Suk [MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701 (Korea, Republic of); Shim, Tae-Hun; Park, Jea-Gun, E-mail: parkjgL@hanyang.ac.kr [MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-07-21

    We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J{sub ex}) of a [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer fabricated with Co{sub 2}Fe{sub 6}B{sub 2}/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J{sub ex} peaked at a certain Ru spacer-thickness: specifically, a J{sub ex} of 0.78 erg/cm{sup 2} at 0.6 nm, satisfying the J{sub ex} criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J{sub ex} rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J{sub ex} criteria. However, the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co{sub 2}Fe{sub 6}B{sub 2} free layer/MgO tunneling barrier/Co{sub 2}Fe{sub 6}B{sub 2} pinned layer, although Co{sub 2}Fe{sub 6}B{sub 2}/MgO based p-MTJ spin-valves ex-situ annealed at 275 °C achieved a TMR of ∼70% at a RA of ∼20 Ω μm{sup 2}.

  9. 化学溶液法制备Bi-2212超导厚膜及表征%FABRICATION AND CHARACTERIZATION FOR Bi-2212 THICK FILM BASED ON THE CHEMICAL SOLUTION METHOD

    Institute of Scientific and Technical Information of China (English)

    王三胜; 范留彬; 张丽

    2012-01-01

    在柔性衬底上制备的Bi-2212(Bi2Sr2CaCu2O8+x)超导厚膜在高场低温下有高的临界电流密度、可塑性好、易加工成材等特点,因而有广阔的应用前景.所以制备低成本、高性能的Bi-2212厚膜技术已经成为此类高温超导材料实用化的关键.本文系统的研究了采用Bi系超导粉前驱化学溶液的方法进行Bi-2212超导厚膜的制备和表征.对制备超导厚膜过程中的关键步骤做了系统的研究,主要包括局部熔融烧结温度、固相烧结温度、匀胶机最高转速、涂层的厚度等对超导转变温度和转变宽度的影响.我们得出最佳的烧结温度和固相温度分别是888℃、845℃,并发现随着匀胶机转速和涂层厚度的增加,超导膜的转变温度逐步提高,当最高转速为4000r/min,涂层厚度设定为七层,制备出的超导膜R~T曲线的第二个相转变点消失了.制备出的超导膜的转变温度在90K左右.与此同时还进行了XRD、SEM测试表征.最终可以得到均匀平整无裂纹的高质量Bi-2212超导厚膜.%The Bi-2212 superconductive thick film fabricated on flexible substrate was equipped with the excellent performance of high threshold current density, deformability and easiness to manufacture which guarantee the wide range of application. So, the techniques of fabricating Bi-2212 thick film with excellent performance have become the critical point for practical application of Bismuth Cobalt oxide high temperature superconducting material. The article reported the approaches of fabricating the Bi-2212 thick film based on the method of precursor chemical solution and the analysis of surface characteristics. It discusses the critical steps and factors during the process of fabricating, including the influence of partial melting of sintered temperature, solid-phase sintering temperature, speed of spin coating machine and the thickness of the film on the point and the width of the superconducting transition

  10. Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, S. K., E-mail: syadav@lanl.gov, E-mail: yadav.satyesh@gmail.com, E-mail: xyliu@lanl.gov; Liu, X.-Y., E-mail: syadav@lanl.gov, E-mail: yadav.satyesh@gmail.com, E-mail: xyliu@lanl.gov [Materials Science and Technology Division, MST-8, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Wang, J. [Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)

    2016-06-14

    An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. The formation of a zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamically driven process.

  11. Investigation on the Effect of the CdCl2 Treatment on CdTe Thin-film Solar Cells of Variable Thickness Fabricated Using Combinatorial Pulsed Laser Deposition

    Science.gov (United States)

    Kadhim, Ali Saber

    Cadmium Chloride (CdCl2) post annealing process has significant impacts on the performance of the CdS/CdTe solar cells since it affects the microstructure, crystallinity and charge carrier doping in CdTe films and also the CdS/CdTe p-n junction formed through S and Te interdiffusion at the junction interface. Therefore, this process has been investigated extensively during the past two decades, and has been optimized for polycrystalline CdS/CdTe thick film solar cells, in which the CdTe thickness is typically in the range of 3-8 microm. Nevertheless, the recent effort to develop cost-performance balanced thin film CdS/CdTe solar cells (with CdTe thickness on the order of 1 microm or less) has encountered difficulties through direct applications of the thick-film CdCl2 post annealing process. These difficulties stem from the large CdTe grain sizes typically in the range of microns in the thick film case. Grain boundaries between such large grains result in through-thickness shorts when the CdTe film thickness is comparable to or smaller than the grain size. Overcoming these difficulties to achieve precise controls of grain morphology, crystallinity and CdS/CdTe interface is important to high-performance CdS/CdTe thin film solar cells and will be the main objective of this thesis. In order to accelerate the study, a combinatorial Pulsed Laser Deposition technique (cPLD) was developed for deposition of CdTe films with different thicknesses on each sample to elucidate important physical properties of Cl diffusion through the selected thickness range at a given CdCl 2 annealing condition. Two sets of samples A and B of CdTe solar cells of multiple thicknesses of 1.5, 1.25, 1.0, and 0.75 microm have been fabricated by using cPLD. Sample A was completed without CdCl2 treatment as a reference, and sample B was treated with CdCl2 in different durations (10, 12, 15, and 17 min) at 360°C in mixed vapor of O2 and Argon (25 sccm:100 sccm). The sample that was treated at 15

  12. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    Science.gov (United States)

    Gassenq, A.; Guilloy, K.; Osvaldo Dias, G.; Pauc, N.; Rouchon, D.; Hartmann, J.-M.; Widiez, J.; Tardif, S.; Rieutord, F.; Escalante, J.; Duchemin, I.; Niquet, Y.-M.; Geiger, R.; Zabel, T.; Sigg, H.; Faist, J.; Chelnokov, A.; Reboud, V.; Calvo, V.

    2015-11-01

    High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance to high strains induced via shaping of the Ge layers into micro-bridges. Building on the high crystalline quality, we demonstrate bi-axial tensile strain of 1.9%, which is currently the highest reported value measured in thick (350 nm) Ge layer. Since this strain is generally considered as the onset of the direct bandgap in Ge, our realization paves the way towards mid-infrared lasers fully compatible with CMOS fab technology.

  13. A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors

    Institute of Scientific and Technical Information of China (English)

    HU Wei-Guo; PAN Yi; LIU Xiang-Lin; ZHANG Pan-Feng; ZHAO Feng-Ai; JIAO Chun-Mei; WEI Hong-Yuan; ZHANG Ri-Qing; WU Jie-Jun; CONG Guang-Wei

    2007-01-01

    Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Ω scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002)AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nm. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

  14. High-Q AlN Contour Mode Resonators with Unattached, Voltage-Actuated Electrodes

    Science.gov (United States)

    Schneider, Robert Anthony

    High-Q narrowband filters at ultra-high frequencies hold promise for reducing noise and suppressing interferers in wireless transceivers, yet research efforts confront a daunting challenge. So far, no existing resonator technology can provide the simultaneous high-Q, high electromechanical coupling ( k2eff), frequency tunability, low motional resistance (Rx), stopband rejection, self-switchability, frequency accuracy, and power handling desired to select individual channels or small portions of a band over a wide RF range. Indeed, each technology provides only a subset of the desired properties. Recently introduced "capacitive-piezoelectric" resonators, i.e., piezoelectric resonators with non-contacting transduction electrodes, known for achieving very good Q's, have recently emerged (in the early 2010's) as a contender among existing technologies to address the needs of RF narrowband selection. Several reports of such devices, made from aluminum nitride (AlN), have demonstrated improved Q's over attached electrode counterparts at frequencies up to 1.2 GHz, albeit with reduced transduction efficiency due to the added capacitive gaps. Fabrication challenges, while still allowing for a glimpse of the promise of this technology, have, until now, hindered attempts at more complex devices than just simple resonators with improved Q's. This thesis project demonstrates several key improvements to capacitive-piezo technology, which, taken together, further bolster its case for deployment for frequency control applications. (Abstract shortened by ProQuest.).

  15. Synthesis of TiAl-Ti2AlN composites by in-situ crystallization

    Institute of Scientific and Technical Information of China (English)

    ZHU Jian-feng; GAO Ji-qiang; WANG Fen

    2006-01-01

    The amorphization process during mechanical alloying (MA) was investigated for the Ti-50%/Al (mole fraction) powder mixtures with no special protection conditions. During the milling process, with the milling time prolonging, the metallic powder Ti and Al were finely mixed, gradually, aluminum completely dissolved into titanium to form an Ti(Al) hcp supersaturated solid solution, and finally, transformed to the amorphous phase after milled for about 39 h. As a result of heat treatment in hot press sintering processing for the mechanically alloyed amorphous powders in vacuum, a submicrostructure intermetallics of TiAl/Ti2AlN composite can be produced by in-situ crystallization. Furthermore, the structure evolution, phase formation and transformation during the heat treatment were also investigated by X-ray diffractometry and differential thermal analysis. The results show that the reaction involves many transitional stages, including formation of TiAl3 and transformation into TiAl and Ti3Al. The examination show that the composite materials fabricated by this in-situ crystallization from amorphization have good mechanical properties due to fine grain size and uniform microstructure.

  16. Morphology of AlN whiskers grown by reacting N2 gas and Al vapor

    Science.gov (United States)

    Matsumoto, M.; Saitou, H.; Takeuchi, Y.; Harada, S.; Tagawa, M.; Ujihara, T.

    2017-06-01

    We have investigated the morphology of AlN whiskers on a polycrystalline AlN substrate by using Fe-Al alloy melts under the different synthesis conditions. Formation density of the AlN whiskers increases and the diameter of the whisker decreases with increasing Al content of the Fe-Al alloy melt. Most of the AlN whiskers were zigzag shape with the hexagonal cross section. The longitudinal direction was the [0001] direction. The facet with the zigzag shape was the {1 1 bar 01} or {1 1 bar 0 1 bar } pyramidal plane and the period of the zigzag facet was almost constant. The average diameter of the whiskers and the period of the zigzag facet decrease with increasing Al content. At the initial stage of the whisker formation, the island of AlN formed on the AlN substrate and the pyramidal facet grows via step-flow growth. From the observation, we discussed the possible mechanism for the formation of the zigzag-shape AlN whiskers.

  17. A thermochemical pathway for controlled synthesis of AlN nanoparticles in non-isothermal conditions

    Energy Technology Data Exchange (ETDEWEB)

    Nersisyan, Hayk H. [Department of Nanomaterials Engineering, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); RASOM, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Yoo, Bung Uk [Graduate School of Energy Science and Technology, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Lee, Kab Ho [Department of Nanomaterials Engineering, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Lee, Jong Hyeon, E-mail: jonglee@cnu.ac.kr [Department of Nanomaterials Engineering, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Graduate School of Energy Science and Technology, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); RASOM, Chungnam National University, 79 Daehak-ro, Yuseong-gu, Daejeon 305-764 (Korea, Republic of)

    2015-03-20

    Highlights: • A non-isothermal combustion process was developed for synthesizing AlN nanoparticles. • Temperature-time profiles and combustion parameters were recorded and discussed. • AlN nanoparticles (50–200 nm) with a specific surface of 7.9–20.8 m{sup 2}/g were prepared. • The thermochemical mechanism of AlN formation in the combustion wave was clarified. - Abstract: The synthesis of AlN nanoparticles in non-isothermal high-temperature conditions was developed. The process involved Al{sub 2}O{sub 3}–Mg–NH{sub 4}Cl mixtures preparation and combustion in nitrogen atmosphere. Temperature profiles in the combustion waves were recorded by thermocouples, and the values of combustion temperature and wave velocity were determined from the recorded profiles. The existence of two independed combustion regimes with maximum temperatures of about 850 °C and 1400–1600 °C were revealed based on concentrations of NH{sub 4}Cl. AlN nanocrystals were obtained and investigated by X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, and Brunauer–Emmett–Teller surface area. AlN nanocrystals prepared under non-isothermal combustion process were comprised well distributed multi-faceted particles with an average size of 50–200 nm. The chemical reactions in the combustion wave were discussed and a possible thermochemical pathway for the synthesis of AlN nanoparticles was proposed.

  18. Development of automated welding processes for field fabrication of thick-walled pressure vessels: electron beam method. Fifth quarterly report, October 1--December 31, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Weber, C.M.

    1978-01-01

    This is the fifth quarterly report of a project to develop and demonstrate an electron beam welding procedure for welding 8'' thick SA 387 Grade 22 Class 2 (2-1/4 Cr--1 Mo) steel. A total of 324 welds have been made to date. Much difficulty has been encountered in the past in attempts to make partial penetration welds (4-1/2'' deep) which do not have a necklace defect. However, a beam oscillation pattern, the horseshoe pattern, has been successfully used to make defect-free, partial penetration welds in the horizontal position. An 8'' thick, defect-free weld was made. Determination of the optimum welding procedure has not yet been made though. For welding in the vertical position, a shoe was designed and used to make void-free, partial penetration welds. A welding procedure which produces defect-free welds in the vertical position has not yet been developed.

  19. A Method to Improve the SGADER Process and Fabricate Ultra-thick Proof Mass Inertial Sensors under the Same DRIE Technique

    Directory of Open Access Journals (Sweden)

    Haifeng DONG

    2010-04-01

    Full Text Available The Silicon Glass Anodic-bonding and Deep Etching Release (SGADER is a standardized MEMS process that has been used to fabricate various MEMS devices, especially accelerometers and gyroscopes. However, the height of SGADER structure is limited by the aspect ratio of the DRIE technique. The effect of the structure height to the resolution of the devices is analyzed. After that, an improvement to the SGADER process, so called Fusion-bonding-added SGADER (F-SGADER process, is proposed, which avoids the aspect ratio limitation, LAG and Footing effect of DRIE and improve the resolution of SGADER devices at the same time. Another advantage of this process is that its structural vibration modes vary linearly with those of the SGADER process, which facilitates the devices’ transition from the SGADER process to the F-SGADER process. Furthermore, FEM simulation is performed to verify this property.

  20. Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes: tubes, spirals, and curved sheets.

    Science.gov (United States)

    Mei, Yongfeng; Thurmer, Dominic J; Deneke, Christoph; Kiravittaya, Suwit; Chen, Yuan-Fu; Dadgar, Armin; Bertram, Frank; Bastek, Barbara; Krost, Alois; Christen, Jürgen; Reindl, Thomas; Stoffel, Mathieu; Coric, Emica; Schmidt, Oliver G

    2009-07-28

    Ultrathin AlN/GaN crystalline porous freestanding nanomembranes are fabricated on Si(111) by selective silicon etching, and self-assembled into various geometries such as tubes, spirals, and curved sheets. Nanopores with sizes from several to tens of nanometers are produced in nanomembranes of 20-35 nm nominal thickness, caused by the island growth of AlN on Si(111). No crystal-orientation dependence is observed while releasing the AlN/GaN nanomembranes from the Si substrate indicating that the driving stress mainly originates from the zipping effect among islands during growth. Competition between different relaxation mechanisms is experimentally revealed for different nanomembrane geometries and well-described by numerical calculations. The cathodoluminescence emission from GaN nanomembranes reveals a weak peak close to the GaN bandgap, which is dramatically enhanced by electron irradiation.

  1. Anomalous elongation of c-axis of AlN on Al2O3 grown by MBE using NH3-cluster ions

    Science.gov (United States)

    Ichinohe, Yoshihiro; Imai, Kazuaki; Suzuki, Kazuhiko; Saito, Hiroshi

    2016-11-01

    AlN thin films were grown on Al2O3 (0001) by MBE using NH3-clusters ionized with the energy of 4-7 eV/molecule at 960 °C. The a-axis is shrunken and the c-axis is extremely elongated at the initial growth stage (up to the film thickness of about 20 nm). The films thicker than 20 nm have the relaxed a- and c-axis lengths close to the unstrained values, which obey the Poisson relation.

  2. Thermodynamical consideration of the synthesis of solid AlN from thermal plasma

    Directory of Open Access Journals (Sweden)

    NIKOLA PEKAS

    2001-08-01

    Full Text Available The synthesis process of solid AlN in thermal plasmas was investigated theoretically by computing the equilibrium composition of the gas mixture involving nitrogen and various amounts of aluminum, oxygen and hydrogen for the temperature range between 1000 and 5500 K. The results obtained by treating the plasma as a single-gas system were combined with those which take into account the presence of solid AlN and liquid Al, to find the optimal conditions for the deposition of solid AlN. The factors determining the efficiency of this process are discussed.

  3. Investigation on the Electrical Conductivity of Transformer Oil-Based AlN Nanofluid

    Directory of Open Access Journals (Sweden)

    M. Dong

    2013-01-01

    Full Text Available Aluminum-nitride-(AlN-transformer oil-based nanofluid was prepared by dispersing AlN nanoparticles in transformer oil. The composition-dependent electrical conductivity of AlN-transformer oil nanofluid was investigated at different ambient temperatures. The results indicate the nonlinear dependences of the electrical conductivity on volumetric fraction and temperature. In comparison to the pure transformer oil, the electrical conductivity of nanofluid containing 0.5% AlN nanoparticles has increased by 1057 times at 60°C. By considering the electrophoresis of the AlN nanoparticles, a straightforward electrical conductivity model is established to modulate and understand the experiment results.

  4. Direct selective metallization of AlN ceramics induced by laser radiation

    Science.gov (United States)

    Antończak, Arkadiusz J.; Kozioł, Paweł E.; Stepak, Bogusz; Szymczyk, Patrycja; Abramski, Krzysztof M.

    2014-03-01

    Aluminum nitride (AlN) ceramics has a unique characteristic, namely the ability to form conductive structures on its surface directly by laser-induced decomposition of the base material. Various research has been carried out on obtaining low-ohmic structures depending on process parameters such as the laser power, overlap of subsequent pulses and the type of shielding gas (air, nitrogen and argon). This paper focuses on explaining which factors have the greatest impact on the resistance (resistivity) value of obtained structures. In order to explain the effect of the laser fluence (below and above the ablation threshold of aluminum nitride) on the chemical structure of the conductive layers, qualitative EDX analyses were performed. Optimization of the process allowed obtaining a resistivity of the conductive layers at a level of ρ = 0.64·10-6 Ω·m, with a thickness of aluminum up to 10 μm (sheet resistance RS = 10 mΩ/Sr). This technology can be useful in making printed circuit boards (PCB), various types of sensors as well as radio-frequency identification (RFID) and Lab-On-a-Chip (LOC) structures. This technology can also be useful for the production of metamaterials.

  5. Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy.

    Science.gov (United States)

    Liu, Ting; Zhang, Jicai; Su, Xujun; Huang, Jun; Wang, Jianfeng; Xu, Ke

    2016-05-17

    Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN.

  6. Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

    Science.gov (United States)

    Liu, Ting; Zhang, Jicai; Su, Xujun; Huang, Jun; Wang, Jianfeng; Xu, Ke

    2016-05-01

    Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN.

  7. Application of the multi-step EPD technique to fabricate thick TiO2 layers: effect of organic medium viscosity on the layer microstructure.

    Science.gov (United States)

    Sadeghi, A A; Ebadzadeh, T; Raissi, B; Ghashghaie, S; Fateminia, S M A

    2013-02-14

    In the present study, electrophoretic deposition (EPD) was used to obtain dense layers of TiO(2) in four organic media-methanol, ethanol, 1-propanol, and butanol-with different TiO(2) nanoparticle concenterations of 1-8 g/L. Microstructural study of the obtained layers by scanning electron (SEM) and optical microscope (OM) revealed that the multistep EPD technique could effectively prevent crack formation across the layer compared with the single-step method and will consequently increase the critical cracking thickness (CCT). The quality of EPD layers was also affected by viscosity. According to SEM and atomic force microscope (AFM) results, as the viscosity of the medium increased, more compact layers were formed which can be attributed to the lower deposition rates in heavier alcohols. High deposition rate in methanol and ethanol was also confirmed by zeta potential results. Suspension viscosity was interestingly observed to control the threshold concentration above which crack formation would occur. These values were measured to be 3 and 5 g/L for methanol and ethanol, respectively. However, in suspensions based on more viscous alcohols, the threshold concentration increased to 8 g/L which implied the decisive role of medium on concentration limits. It indicates that by employing organic vehicles of higher viscosity it is possible to maintain the CCT values obtained in less viscous media with no need to decrease the colloidal concentration of the suspension.

  8. Development of automated welding processes for field fabrication of thick-walled pressure vessels: electron beam method. Fourth quarterly report, July 1--September 30, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Weber, C.M.

    1978-01-01

    This report is the fourth quarterly report of a project to develop and demonstrate an electron beam welding procedure for welding 8'' thick SA 387 Grade 22 Class 2 (2-1/4 Cr--1 Mo) steel. Due to the late arrival of the steel to be used in this project, a six month extension in the completion date has been made. Work is in progress for developing 4-1/2'' deep partial penetration electron beam welding procedures. A total of 257 welds have been made to date. Several defects have been encountered and successfully eliminated. The occurrence of a necklace defect, which has been shown to be a cold shut resulting from improper solidification, has not yet been eliminated. It has been observed that the beam oscillation pattern is influential on the behavior of the weld cavity during welding. In the vertical welding position, it has been determined that the use of a welding shoe is required.

  9. Electronic Structures of the Filled Tetrahedral Semiconductor Li3AlN2

    Institute of Scientific and Technical Information of China (English)

    MA Chun-Lan; PAN Tao

    2006-01-01

    The first-principles total energy calculations with the local density approximation (LDA) and the plane wave pseudopotential method are employed to investigate the structural properties and electronic structures of Li3AlN2. The calculated lattice constants and internal coordination of atoms agree well with the experimental results. Detailed studies of the electronic structure and the charge-density redistribution reveal the features of the strong ionicity bonding of Al-N and Al-Li, and strong hybridizations between Li and N in Li3AlN2. Our band structure calculation verifies Li3AlN2 is a direct gap semiconductor with the LDA gap value of about 2.97eV and transition at Γ.

  10. The Oxidation of AlN in Dry and Wet Oxygen

    Science.gov (United States)

    Opila, Elizabeth; Humphrey, Donald; Jacobson, Nathan; Yoshio, Tetsuo; Oda, Kohei

    1998-01-01

    The oxidation kinetics of AlN containing 3.5 wt% Y2O3 were studied by thermogravimetric analysis in dry oxygen and 10% H2O/balance oxygen at temperatures between 1000 and 1200 C for times between 48 and 100 h. The oxidation kinetics for AlN in dry oxygen were parabolic and of approximately the same magnitude and temperature dependence as other alumina forming materials. In this case, diffusion of oxygen and/or aluminum through the alumina scale is the rate limiting mechanism. The oxidation kinetics for AlN in wet oxygen were nearly linear and much more rapid than rates observed in dry oxygen. Numerous micropores were observed in the alumina formed on AIN in wet oxygen. These pores provide a fast path for oxygen transport. The linear kinetics observed in this case suggest that the interface reaction rate of AlN with wet oxygen is the oxidation rate limiting step.

  11. Comparative research of plasma-assisted milling and traditional milling in synthesizing AlN

    Science.gov (United States)

    Wang, Sen; Wang, Wenchun; Liu, Zhijie; Yang, Dezheng

    2017-06-01

    In this paper, traditional milling and discharge plasma-assisted milling are employed to synthesize aluminum nitride (AlN) powder at nanometer scale by milling the mixture of aluminum and lithium hydroxide monohydrate. AlN powders can be generated in traditional milling and plasma-assisted milling in an hour milling time. Differential thermal analysis curves show that the reaction temperature of the powders treated by plasma-assisted milling is lower than that of traditional milling. These results indicate that plasma-assisted milling has higher efficiency in the synthesis of AlN, getting smaller crystallite size and activating powder. Moreover, an optical emission spectrum is employed to demonstrate the active species in plasma. The different formation process of AlN in the two-milling process, and the promotion effects of plasma in the milling process are discussed.

  12. 压力容器封头最小成形厚度标注探讨%Discussion Dimensioning of Minimum Required Fabrication Thickness of the Formed Head of Pressure Vessel

    Institute of Scientific and Technical Information of China (English)

    张志辉

    2013-01-01

      封头是压力容器中的主要承压零部件之一,其质量好坏对压力容器的安全运行起着重要作用。厚度是封头最主要的结构参数,是在规定的载荷条件下,保证结构强度、刚度以及使用寿命的基本条件之一。针对GB 150.1~GB 150.4—2011《压力容器》中关于封头最小成形厚度的规定进行了探讨,分析了几种不同情况下设计图样中封头最小厚度的标注方法,并通过举例对封头最小成形厚度标注方法进行了讨论。%The head is one of the main pressure parts of pressure vessel and its quality plays a vi‐tal role on the safe operation of pressure vessel .T hickness is the main structure parameters of the head ,it guarantees the structure strength and the structure stiffness and the service life under prescribed loading conditions .The minimum required fabrication thickness of the head specified by GB 150 .1~GB 150 .4—2011 “Pressure V essels” discussed and several different cases to mark the minimum thickness of the head is analyzed .Marked method of the minimum required fabrica‐tion thickness of the head is discussed through the example .

  13. Superconductivity in Group III-V Semiconductor AlN Under High Pressure

    Directory of Open Access Journals (Sweden)

    G. Selva Dancy

    2015-09-01

    Full Text Available The electronic properties of cubic zinc blende type group III-V semiconductor AlN under pressure is studied using full potential linear muffin-tin orbital (FP-LMTO method. At normal pressure, AlN is an indirect bandgap semiconductor with band gap value 4.56 eV. When the pressure is increased, there is enhanced overlapping between the wave functions of the neighboring atoms. As a result the widths of the valence and empty conduction bands increase. These changes lead to the narrowing and indirect closing of the band gaps in AlN (metallization. On further increase of pressure, AlN becomes a superconductor and AlN comes under the class of electron-phonon-mediated high pressure superconductors. The superconducting transition temperatures (Tc of AlN are obtained as a function of pressure for the CsCl structure. It is also confirmed that the metallization, structural phase transition and onset of superconductivity do not occur simultaneously in this compound. DOI: http://dx.doi.org/10.17807/orbital.v7i3.628

  14. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111 substrate

    Directory of Open Access Journals (Sweden)

    Dennis Christy

    2014-10-01

    Full Text Available The crack-free metal-organic chemical vapor deposition (MOCVD grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

  15. A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

    Institute of Scientific and Technical Information of China (English)

    YANG Yuan; GAO Yong; GONG Peng-Liang

    2008-01-01

    @@ A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.

  16. Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

    2014-10-30

    Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

  17. Ultra-high frequency, high Q/volume micromechanical resonators in a planar AlN phononic crystal

    Science.gov (United States)

    Ghasemi Baboly, M.; Alaie, S.; Reinke, C. M.; El-Kady, I.; Leseman, Z. C.

    2016-07-01

    This paper presents the first design and experimental demonstration of an ultrahigh frequency complete phononic crystal (PnC) bandgap aluminum nitride (AlN)/air structure operating in the GHz range. A complete phononic bandgap of this design is used to efficiently and simultaneously confine elastic vibrations in a resonator. The PnC structure is fabricated by etching a square array of air holes in an AlN slab. The fabricated PnC resonator resonates at 1.117 GHz, which corresponds to an out-of-plane mode. The measured bandgap and resonance frequencies are in very good agreement with the eigen-frequency and frequency-domain finite element analyses. As a result, a quality factor/volume of 7.6 × 1017/m3 for the confined resonance mode was obtained that is the largest value reported for this type of PnC resonator to date. These results are an important step forward in achieving possible applications of PnCs for RF communication and signal processing with smaller dimensions.

  18. Effect of initial growth on the quality of GaN on patterned sapphire substrate with ex situ physical vapor deposition AlN seed layer

    Science.gov (United States)

    Wang, Hongbo; Daigo, Yoshiaki; Seino, Takuya; Ishibashi, Sotaro; Sugiyama, Masakazu

    2016-10-01

    GaN epitaxy was explored on a cone-patterned sapphire substrate with an ex situ AlN seed layer prepared by physical vapor deposition (PVD). The effect of initial growth on the quality of the GaN epilayer was investigated using both ex situ PVD-AlN seed layers with various thicknesses and various deposition parameters such as temperature and reactor pressure in metal-organic vapor-phase epitaxy (MOVPE). It was found that the quality of GaN is insensitive to both the thickness of the ex situ PVD-AlN seed layer and the MOVPE growth conditions. A high-quality GaN film was realized, as indicated by room-temperature CL mapping (dark spot density of 1.6 × 108 cm-2), on a patterned sapphire substrate with a wide growth condition window by simply employing an ex situ PVD-AlN seed layer.

  19. Electronic structures, elastic properties, and minimum thermal conductivities of cermet M{sub 3}AlN

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jin [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Key Laboratory of Liquid–Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Chen, ZhiQian, E-mail: chen_zq@swu.edu.cn [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Li, ChunMei; Li, Feng; Nie, ChaoYin [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China)

    2014-08-15

    The electronic structures and elastic anisotropies of cubic Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN are investigated by pseudopotential plane-wave method based on density functional theory. At the Fermi level, the electronic structures of these compounds are successive with no energy gap between conduct and valence bands, and exhibit metallicity in ground states. In valence band of each partial density of states, the different orbital electrons indicate interaction of corresponding atoms. In addition, the anisotropy of Hf{sub 3}AlN is found to be significantly different from that of Ti{sub 3}AlN and Zr{sub 3}AlN, which involve the differences in the bonding strength. It is notable that Hf{sub 3}AlN is a desired thermal barrier material with the lowest thermal conductivity at high temperature among the three compounds. - Graphical abstract: 1.Young's moduli of anti-perovskite Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN in full space. 2.Electron density differences on crystal planes (1 0 0), (2 0 0), and (1 1 0) of anti-perovskite Zr{sub 3}AlN. - Highlights: • We calculated three anti-perovskite cermets with first-principles theory. • We illustrated 3D Young modulus and found the anomalous anisotropy. • We explained the anomaly and calculated the minimum thermal conductivities.

  20. Growth of Single Crystals and Fabrication of GaN and AlN Wafers

    Science.gov (United States)

    2006-03-01

    in nature and thus must be synthesized. Crystal growth of this group using standard methods ( Czochralski , Bridgman) is extremely difficult because of...reaction zone in which deposition occurs. High growth rates of up to 0.5 mm/h were obtained with this method ; however, the crystals grew only for short...Chapter Five presents the growth of GaN on sapphire with a modified sandwich growth method which is a variation of vapor phase transport process. Optimum

  1. Influence of high-temperature processing on the surface properties of bulk AlN substrates

    Science.gov (United States)

    Tojo, Shunsuke; Yamamoto, Reo; Tanaka, Ryohei; Thieu, Quang Tu; Togashi, Rie; Nagashima, Toru; Kinoshita, Toru; Dalmau, Rafael; Schlesser, Raoul; Murakami, Hisashi; Collazo, Ramón; Koukitu, Akinori; Monemar, Bo; Sitar, Zlatko; Kumagai, Yoshinao

    2016-07-01

    Deep-level luminescence at 3.3 eV related to the presence of Al vacancies (VAl) was observed in room temperature photoluminescence (RT-PL) spectra of homoepitaxial AlN layers grown at 1450 °C by hydride vapor-phase epitaxy (HVPE) and cooled to RT in a mixture of H2 and N2 with added NH3. However, this luminescence disappeared after removing the near surface layer of AlN by polishing. In addition, the deep-level luminescence was not observed when the post-growth cooling of AlN was conducted without NH3. Secondary ion mass spectrometry (SIMS) studies revealed that although the point defect density of the interior of the AlN layers remained low, the near surface layer cooled in the presence of NH3 was contaminated by Si impurities due to both suppression of the surface decomposition by the added NH3 and volatilization of Si by decomposition of the quartz reactor walls at high temperatures. The deep-level luminescence reappeared after the polished AlN wafers were heated in presence of NH3 at temperatures above 1400 °C. The surface contamination by Si is thought to generate VAl near the surface by lowering their formation energy due to the Fermi level effect, resulting in deep-level luminescence at 3.3 eV caused by the shallow donor (Si) to VAl transition.

  2. Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

    Energy Technology Data Exchange (ETDEWEB)

    Kita, Takashi; Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan); Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro [YUMEX INC., 400 Itoda, Yumesaki, Himeji, Hyogo 671-2114 (Japan); Ishihara, Tsuguo; Izumi, Hirokazu [Hyogo Prefectural Institute of Technology, 3-1-12 Yukihira, Suma, Kobe 654-0037 (Japan)

    2015-04-28

    We studied energy transfer from AlN to doped Gd{sup 3+} ions as a function of the post-thermal annealing temperature. Gd-doped AlN thin films were deposited on fused-silica substrates using a reactive radio-frequency magnetron sputtering technique. The film is a c-axis oriented polycrystal. The intra-orbital electron transition in Gd{sup 3+} showed an atomically sharp luminescence at 3.9 eV (318 nm). The photoluminescence (PL) excitation spectrum exhibited a resonant peak, indicating efficient energy transfer from the host AlN crystal to Gd{sup 3+} ions. The PL intensity increases approximately ten times by thermal annealing. The PL decay lifetime becomes long with annealing, and mid-gap luminescence relating to the crystal defects in AlN was also found to be reduced by annealing. These results suggest that energy dissipation of excited carriers in AlN was suppressed by annealing, and the efficiency of energy transfer into Gd{sup 3+} was improved.

  3. Synthesis of Single Hexagonal-Phase AlN Nanocrystallines by a Liquid-Solid Metathetical Reaction in an Organic Solution

    Institute of Scientific and Technical Information of China (English)

    YAN Guojun; CHEN Guangde; LU Huiming; GUO Lei

    2008-01-01

    A liquid-solid metathetical reaction method (LSMRM) of synthesizing AlN nanocrystallines is presented. AlN nanocrystallines made through LSMRM are characterized by X-ray diffractions (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Fourier transformation infrared (FT-IR) spectroscopy, and Raman spectroscopy. The results show that the samples are single hexagonal-phase AlN and the size of the AlN samples is about tens of nanometer.

  4. 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm

    Science.gov (United States)

    Inoue, Shin-ichiro; Tamari, Naoki; Taniguchi, Manabu

    2017-04-01

    High-power 265 nm deep-ultraviolet (DUV) AlGaN-based light-emitting diodes (LEDs) with large-area AlN nanophotonic light-extraction structures that were fabricated by a nanoimprint lithography process are presented. Each DUV-LED has a large active area (mesa size of ˜0.35 mm2) and a uniform current spreading design that allows high injection current operation. We have shown that these DUV-LEDs with their large-area nanoimprinted AlN nanophotonic structures exhibit wider near-field emitting areas, stronger far-field extracted light intensities, and an approximately 20-fold increase in output power when compared with a conventional flat-surface DUV-LED. A large-area nanoimprinted single-chip DUV-LED operating in the UV-C wavelength regime has demonstrated a record continuous-wave output power in excess of 150 mW for an injection current of 850 mA at a peak emission wavelength of 265 nm.

  5. Adhesion strength and nucleation thermodynamics of four metals (Al, Cu, Ti, Zr) on AlN substrates

    Science.gov (United States)

    Tao, Yuan; Ke, Genshui; Xie, Yan; Chen, Yigang; Shi, Siqi; Guo, Haibo

    2015-12-01

    Devices based on AlN generally require adherent and strong interfaces between AlN and other materials, whereas most metals are known to be nonwetting to AlN and form relatively weak interfaces with AlN. In this study, we selected four representative metals (Al, Cu, Ti, and Zr) to study the adhesion strength of the AlN/metal interfaces. Mathematical models were constructed between the adhesion strength and enthalpy of formation of Al-metal solid solutions, the surface energies of the metals, and the lattice mismatch between the metals and AlN, based on thermodynamic parameters calculated using density functional theory. It appears that the adhesion strength is mainly determined by the lattice mismatch, and is in no linear correlation with either the Al-metal solution's formation enthalpies or the metals' surface energies. We also investigated the nucleation thermodynamics of the four metals on AlN substrates. It was found that Ti forms the strongest interface with AlN, and has the largest driving force for nucleation on AlN substrates among the four metals.

  6. Epitaxial growth of ZnO thin films on AlN substrates deposited at low temperature by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Rahmane, S.; Soussou, A.; Gautron, E.; Jouan, P.Y.; Le Brizoual, L.; Barreau, N.; Djouadi, M.A. [Institut des Materiaux Jean Rouxel -IMN-, UMR CNRS 6502, Nantes (France); Abdallah, B. [Institut des Materiaux Jean Rouxel -IMN-, UMR CNRS 6502, Nantes (France); Atomic Energy Commission Syrian (AECS), Damascus (Syria); Soltani, A. [IEMN, UMR CNRS 8520, USTL, Villeneuve d' Ascq (France)

    2010-07-15

    Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on AlN substrate. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) analysis of the synthesized AlN film on ZnO buffer layer have shown some amorphous zones close to the interface followed by a nanocrystalline layer exhibiting (10-10) and (0002) orientations of the hexagonal AlN crystalline phase. At the top of the film, a relatively well-crystallized layer with a single (0002) orientation has been observed. We have related the relatively bad interface to the presence of oxygen coming from ZnO substrate. This behaviour was different for the growth of ZnO film when AlN was used as substrate. In fact, we have observed thanks to HRTEM images and selected area electron diffraction patterns, that the ZnO film deposited on AlN substrate exhibits an epitaxial growth which is strongly dependent on the crystalline quality of AlN film. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  7. CEMS study of defect annealing in Fe implanted AlN

    Science.gov (United States)

    Bharuth-Ram, K.; Geburt, S.; Ronning, C.; Masenda, H.; Naidoo, D.

    2016-12-01

    An AlN thin film grown on sapphire substrate was implanted with 45 keV 57Fe and 56Fe ions at several energies to achieve a homogeneous concentration profile of approximately 2.6 at.%. in the AlN film. Conversion electron Mössbauer Spectroscopy data were collected after annealing the sample up to 900 °C. The spectra were fitted with three components, a single line attributed to small Fe clusters, and two quadrupole split doublets attributed to Fe substituting Al in the wurtzite AlN lattice and to Fe located in implantation induced lattice damage. The damage component shows significant decrease on annealing up to 900 °C, accompanied by corresponding increases in the singlet component and the substitutional Fe.

  8. Hot-wall low pressure chemical vapor deposition growth and characterization of AlN thin films

    Science.gov (United States)

    Heinselman, Karen N.; Brown, Richard J.; Shealy, James R.

    2017-10-01

    Hot-wall low pressure chemical vapor deposition (LPCVD) of highly crystalline epitaxial thin-film AlN grown on silicon (1 1 1) substrates is reported for the first time. Deposition was carried out in a modified commercial LPCVD at 1000 °C and 2 torr. Preflow time for the aluminum precursor, trimethylaluminum, was varied to nucleate Al, and the resulting variation in X-ray diffraction (XRD) crystalline AlN peaks is presented. With a 30 s dichlorosilane (SiH2Cl2) pretreatment at 700 °C and the optimal TMAl preflow time, the FWHM of the resulting film was 1116 arcsec for the AlN (0 0 2) 2 θ - ω peak, and the AlN (0 0 2) peak had an omega rocking curve FWHM of 1.6°. This AlN film was shown to be epitaxially aligned to the Si (1 1 1) substrate.

  9. Post-CMOS compatible high-throughput fabrication of AlN-based piezoelectric microcantilevers

    Science.gov (United States)

    Pérez-Campos, A.; Iriarte, G. F.; Hernando-Garcia, J.; Calle, F.

    2015-02-01

    A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoelectric cantilevers has been developed. The fabrication process is suitable for standard silicon technology and provides low-cost and high-throughput manufacturing. This work reports design, fabrication and characterization of piezoelectric cantilevers based on aluminum nitride (AlN) thin films synthesized at room temperature. The proposed microcantilever system is a sandwich structure composed of chromium (Cr) electrodes and a sputtered AlN film. The key issue for cantilever fabrication is the growth at room temperature of the AlN layer by reactive sputtering, making possible the innovative compatibility of piezoelectric MEMS devices with CMOS circuits already processed. AlN and Cr have been etched by inductively coupled plasma (ICP) dry etching using a BCl3-Cl2-Ar plasma chemistry. As part of the novelty of the post-CMOS micromachining process presented here, a silicon Si (1 0 0) wafer has been used as substrate as well as the sacrificial layer used to release the microcantilevers. In order to achieve this, the Si surface underneath the structure has been wet etched using an HNA (hydrofluoric acid + nitric acid + acetic acid) based solution. X-ray diffraction (XRD) characterization indicated the high crystalline quality of the AlN film. An atomic force microscope (AFM) has been used to determine the Cr electrode surface roughness. The morphology of the fabricated devices has been studied by scanning electron microscope (SEM). The cantilevers have been piezoelectrically actuated and their out-of-plane vibration modes were detected by vibrometry.

  10. Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Li Xin-Hua; Zhong Fei; Qiu Kai; Yin Zhi-Jun; Ji Chang-Jian

    2008-01-01

    This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire (0001) substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature (HT) AlN layer and a low-temperature (LT) AlN layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-AlN layer can result in the growth of GaN epilayer in Ga-polarity and the LT-AlN layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm2/V.s at room temperature when the thickness of LT-AlN layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilayers by the utilization of LT-AlN layer.

  11. Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AlN substrate

    Science.gov (United States)

    Shahedipour-Sandvik, F.; Grandusky, J. R.; Jamil, M.; Jindal, V.; Schujman, S. B.; Schowalter, L. J.; Liu, R.; Ponce, F. A.; Cheung, M.; Cartwright, A.

    2005-09-01

    Relatively intense deep-green/yellow photoluminescence emission at ~600 nm is observed for InGaN/GaN multi quantum well (MQW) structures grown on bulk AlN substrates, demonstrating the potential to extend commercial III-Nitride LED technology to longer wavelengths. Optical spectroscopy has been performed on InGaN MQWs with an estimated In concentration of greater than 50% grown by metalorganic chemical vapor phase epitaxy at 750oC. Temperature- and power-dependence, time-resolved photoluminescence as well as spatially resolved cathodoluminescence measurements and transmission electron microscopy have been applied to understand and elucidate the nature of the mechanism responsible for radiative recombination at 600nm as well as higher energy emission band observed in the samples. A comparison between samples grown on bulk AlN and sapphire substrates indicate a lower degree of compositional and/or thickness fluctuation in the latter case. Our results indicate the presence of alloy compositional fluctuation in the active region despite the lower strain expected in the structure contrary to that of low In composition active regions deposited on bulk GaN substrates. Transient photoluminescence measurements signify a stretched exponential followed by a power decay to best fit the luminescence decay indicative of carrier hopping in the active region. Our results point to the fact that at such high In composition (>30%) InGaN compositional fluctuation is still a dominant effect despite lower strain at the substrate-epi interface.

  12. High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy.

    Science.gov (United States)

    Xenogiannopoulou, E; Tsipas, P; Aretouli, K E; Tsoutsou, D; Giamini, S A; Bazioti, C; Dimitrakopulos, G P; Komninou, Ph; Brems, S; Huyghebaert, C; Radu, I P; Dimoulas, A

    2015-05-07

    Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe2/Bi2Se3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3.

  13. Structural and optical properties of AlN grown by solid source solution growth method

    Science.gov (United States)

    Kangawa, Yoshihiro; Suetsugu, Hiroshige; Knetzger, Michael; Meissner, Elke; Hazu, Kouji; Chichibu, Shigefusa F.; Kajiwara, Takashi; Tanaka, Satoru; Iwasaki, Yosuke; Kakimoto, Koichi

    2015-08-01

    Structural and optical properties of AlN grown on AlN(0001) by the solid source solution growth (3SG) method were investigated. Transmission electron microscopy (TEM) analysis revealed that the geometrical relationship between the growth directions and slip planes influenced the dislocation propagation behaviors and annihilation mechanisms. Panchromatic and monochromatic images in the cathodoluminescence (CL) spectrum further revealed that C impurities were segregated near the surface, while Al vacancies were widely distributed in the AlN/AlN(0001) grown using the 3SG method.

  14. Characterization and Evaluation of TiB2-AlN Composites for Armor Applications

    Science.gov (United States)

    2013-09-01

    titanium diboride (TiB2) and aluminum nitride (AlN) of varying compositions were consolidated by hot pressing. The compositions examined were 30-vol% TiB2...ceramic composite of titanium diboride (TiB2) and aluminum nitride (AlN) was chosen to be evaluated. TiB2 has been reported (3) to have high...showed some oxygen, which could be surface contamination , and sulfur impurities. 5 Figure 1. XRD spectrum of TiB2 powder. Figure 2

  15. Synthesis of AlN whiskers using cobalt oxide catalyst and their alignments for the improvement of thermal conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Dang, Thi My Linh [Nano-Convergence Materials Center, Korea Institute of Ceramic Engineering and Technology, Soho-ro 10, Jinju-si, Kyeoungsangnam-do, 660-031 (Korea, Republic of); Electronic Materials Lab., School of Advanced Materials Science and Engineering, SungKyunKwan Univ., Suwon-si, Gyeonggi-do, 440-746 (Korea, Republic of); Yoon, Dae-Ho, E-mail: dhyoon@skku.edu [Electronic Materials Lab., School of Advanced Materials Science and Engineering, SungKyunKwan Univ., Suwon-si, Gyeonggi-do, 440-746 (Korea, Republic of); Kim, Chang-Yeoul, E-mail: cykim15@kicet.re.kr [Nano-Convergence Materials Center, Korea Institute of Ceramic Engineering and Technology, Soho-ro 10, Jinju-si, Kyeoungsangnam-do, 660-031 (Korea, Republic of)

    2016-08-15

    We synthesized one dimensional (1-D) AlN whiskers by using the cobalt oxide catalyst-assisted carbothermal reduction method. The formation of AlN whiskers is investigated by the thermo-gravimetric and differential thermal analysis, Fourier-transformed infrared spectra, X-ray diffraction patterns, scanning electron microscopy and transmission electron microscopy observations. It was found that Co{sub 3}O{sub 4} droplets on the surfaces of Al{sub 2}O{sub 3} acted as a catalyst for the growth of AlN whiskers by vapor-liquid-solid (VLS) mechanism. In addition, AlN whiskers/PVA composites aligned in parallel with the heat flow direction showed an excellent thermal conductivity about three times higher than those of the perpendicularly aligned whisker composites. - Highlights: • AlN whiskers with high aspect ratio were synthesized from Al{sub 2}O{sub 3}. • Co{sub 3}O{sub 4} droplets on the surface of Al{sub 2}O{sub 3} acts as a catalyst for the whisker growth. • AlN whiskers are aligned within PVA in perpendicular and parallel with heat flow. • AlN whisker/PVA composite in perpendicular alignment shows a excellent heat conductivity.

  16. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    Science.gov (United States)

    Sun, Haiding; Wu, Feng; tahtamouni, T. M. Al; Alfaraj, Nasir; Li, Kuang-Hui; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-10-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0 0 0 1) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  17. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  18. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    Science.gov (United States)

    Kukushkin, S. A.; Osipov, A. V.; Sergeeva, O. N.; Kiselev, D. A.; Bogomolov, A. A.; Solnyshkin, A. V.; Kaptelov, E. Yu.; Senkevich, S. V.; Pronin, I. P.

    2016-05-01

    This paper presents the results of pyroelectric and piezoelectric studies of AlN films formed by chloride-hydride epitaxy (CHE) and molecular beam epitaxy (MBE) on epitaxial SiC nanolayers grown on Si by the atom substitution method. The surface topography and piezoelectric and pyroelecrtric responses of AlN films have been analyzed. The results of the study have shown that the vertical component of the piezoresponse in CHE-grown AlN films is more homogeneous over the film area than that in MBE-grown AlN films. However, the signal from the MBE-synthesized AlN films proved to be stronger. The inversion of the polar axis (polarization vector) on passage from MBE-grown AlN films to CHE-grown AlN films has been found experimentally. It has been shown that the polar axis in MBE-grown films is directed from the free surface of the film toward the Si substrate while, in CHE-grown films, the polarization vector is directed toward the free surface.

  19. Thermal conductivity and interfacial conductance of AlN particle reinforced metal matrix composites

    Science.gov (United States)

    Kida, M.; Weber, L.; Monachon, C.; Mortensen, A.

    2011-03-01

    Aluminum nitride (AlN) particle reinforced metal-matrix-composites produced by pressure infiltration are characterized in terms of their thermal conductivity. The composites are designed to cover a wide range of phase contrast between the dispersed particles and the matrix; this is achieved by changing the matrix conductivity using Cu, Al, Sn, and Pb as the matrix. The interface thermal conductance (hc) between AlN and the matrix metals is determined by varying the size of the AlN particles using the Hasselman-Johnson approach and the differential effective medium (DEM) model to calculate hc from measured composite conductivity values. In addition, hc is measured directly at the AlN/Al interface using the transient thermoreflectance (TTR) method on thin aluminum layers deposited on flat AlN substrates to find good agreement with the value derived directly from Al/AlN composites of variable particle size and thus confirm the approach used here to measure hc. Data from the study show that hc at AlN-metal interfaces increases with the metal/AlN Debye temperature ratio; however, the increase is much less than predicted by currently accepted models.

  20. Investigation of AlN Thin Films as Buried Insulator in SOI Structure

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Self-heating effects in silicon-on-insulator (SOI) devices limit the applicability of SOI materials in electronics in cases where high power dissipation is expected. AlN film as a potential candidate for buried insulator material in SOI-structures is investigated. Ion-beam-enhanced deposition (IBED) is used to manufacture large area AlN films. SIMS measurements indicate the formation of AlN films. The characterization of the films reveals that the quality of the films strongly depends on the evaporation rate of Al. For the film with high quality deposited at 0.05nm/s, it has higher component of N, excellent dielectric property and a smoother surface with roughness RMS value of 0.13nm, and can be bonded directly at room temperature by the smart-cut process. SOI structure with the AlN film as buried insulator has formed successfully for the first time, which is confirmed by XTEM micrograph.

  1. Electronic structures of the F-terminated AlN nanoribbons

    Indian Academy of Sciences (India)

    Yu-Ling Song; Dao-Bang Lu; Ben-Liang Cui; Jian-Min Zhang

    2012-03-01

    Using the first-principles calculations, electronic properties for the F-terminated AlN nanoribbons with both zigzag and armchair edges are studied. The results show that both the zigzag and armchair AlN nanoribbons are semiconducting and nonmagnetic, and the indirect band gap of the zigzag AlN nanoribbons and the direct band gap of the armchair ones decrease monotonically with increasing ribbon width. In contrast, the F-terminated AlN nanoribbons have narrower band gaps than those of the H-terminated ones when the ribbons have the same bandwidth. The densityof-states (DOS) and local density-of-states (LDOS) analyses show that the top of the valence band for the F-terminated ribbons is mainly contributed by N atoms, while at the side of the conduction band, the total DOS is mainly contributed by Al atoms. The charge density contour analyses show that Al–F bond is ionic because the electronegativity of F atom is much stronger for F atom than for Al atom, while N–F bond is covalent because of the combined action of the stronger electronegativity and the smaller covalent radius.

  2. Roles of rare earth oxide additives in millimeter-wave sintering of AlN

    Institute of Scientific and Technical Information of China (English)

    Yukio Makino; Takashi Yoshioka; Hiromi Nakano; Toshiyuki Ueno; Shoji Miyake

    2008-01-01

    Roles of rare earth oxide (RE2O3) additives in millimeter-wave(MM) sintering of AlN were investigated from the standpoints of phase diagram, heating characteristics of rare earth oxides, and morphology of intergranular oxide phase. In the millimeter-wave sintering of AlN, densification temperature decreased with the decrease of the ionic radius of rare earth ion and was closely related with the eutectic temperature in the RE2O3-Al2O3 binary system. The lowest densification temperature in the millimeter-wave sintering of AlN with Yb2O3 additive was attributed to the largest heating rate of Yb2O3·Al2O3 binary oxide under millimeter-wave radiation. Furthermore, the lowest densification temperature could be attained while selecting the Yb2O3 content so as to form the intergranular phase with the eutectic composition in the Yb2O3-Al2O3 binary system. The result showed good agreement with the above mentioned during the sintering of Si3N4 with Yb2O3-Al2O3 additive. From TEM observation, it was verified that film-like intergranular oxide phase formed under millimeter-wave radiation was favorable for attaining high thermal conductivity in the Yb2O3 added AlNs.

  3. Magnetron sputtering system stabilisation for high rate desposition of AlN films

    DEFF Research Database (Denmark)

    Fomin, A; Akhmatov, Vladislav; Selishchev, S

    1998-01-01

    The stabilisation of a planar magnetron sputtering system for reactive sputtering of AlN in a gaseous mixture of Ar and highly active NH3 was examined. The helical instability in the cathode plasma sheath was observed and methods for its damping were proposed. It was found that the deposition of c...

  4. Cd doping of AlN via ion implantation studied with perturbed angular correlation

    CERN Document Server

    Kessler, Patrick; Miranda, Sérgio MC; Simon, R; Correia, João Guilherme; Johnston, Karl; Vianden, Reiner

    2012-01-01

    AlN with a wide bandgap of 6.2 eV is a promising candidate for ultraviolet light-emitting diodes and laser diodes. However, the production of the required p-type AlN is still challenging. As a possible dopant Cd was suggested among other Group II atoms (Be, Mg, and Zn). In this study the annealing condition of implanted Cd in AlN was investigated with the method of the perturbed angular correlation (PAC). Therefore radioactive $^{117}$Cd or $^{111m}$Cd ions were implanted into thin AlN films on sapphire substrate with an energy of 30 keV and fluences in the range of 10$^{11}$ ions/cm$^{2}$. After thorough annealing with a proximity cap of the same material most of the Cd-probes occupy substitutional lattice sites and almost all implantation damage can be annealed. This results in a distinct frequency in the PAC spectra which increases with temperature. In contrast to the formation of an indium nitrogen-vacancy complex observed with the probe $^{111}$In on substitutional Al-sites no defects are bound to substi...

  5. Lanthanide impurity level location in GaN, AlN, and ZnO

    NARCIS (Netherlands)

    Dorenbos, P.; Van der Kolk, E.

    2007-01-01

    A method that has proven succesful in locating the energy levels of divalent and trivalent lanthanide ions (Ce, Pr,..., Eu,...Yb, Lu) in wide band gap inorganic compounds like YPO4 and CaF2 is applied to locate lanthanide levels in the wideband semiconductors GaN, AlN, their solid solutions AlxGa1-x

  6. Resonant indirect excitation of Gd{sup 3+} in AlN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ishizu, Yuta; Tsuji, Kazuma; Harada, Yukihiro; Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan); Chigi, Yoshitaka; Nishimoto, Tetsuro; Tanaka, Hiroyuki; Kobayashi, Mikihiro [YUMEX INC., 400 Itoda, Yumesaki, Himeji, Hyogo 671-2114 (Japan); Ishihara, Tsuguo; Izumi, Hirokazu [Hyogo Prefectural Institute of Technology, 3-1-12 Yukihira, Suma, Kobe 654-0037 (Japan)

    2014-05-07

    We studied the efficient indirect excitation of Gd{sup 3+} ions in AlN thin films. C-axis oriented polycrystalline thin films of Al{sub 0.997}Gd{sub 0.003}N/AlN were grown on fused silica substrates using a reactive radio-frequency magnetron sputtering technique. The intra-orbital electron transition in Gd{sup 3+} showed a narrow luminescence line at 3.9 eV. The photoluminescence (PL) excitation (PLE) spectrum exhibited a peak originating from efficient indirect energy transfer from the band edge of AlN to Gd{sup 3+} ions. The PLE peak shifted and the PL intensity showed a dramatic change when the AlN band gap was varied by changing the temperature. Energy scanning performed by changing the band-gap energy of AlN with temperature revealed several resonant channels of energy transfer into the higher excited states of Gd{sup 3+}.

  7. Investigation of Donor and Acceptor Ion Implantation in AlN

    Energy Technology Data Exchange (ETDEWEB)

    Osinsky, Andrei [Agnitron Technology Inc., Eden Prairie, MN (United States)

    2015-09-16

    AlGaN alloys with high Al composition and AlN based electronic devices are attractive for high voltage, high temperature applications, including microwave power sources, power switches and communication systems. AlN is of particular interest because of its wide bandgap of ~6.1eV which is ideal for power electronic device applications in extreme environments which requires high dose ion implantation. One of the major challenges that need to be addressed to achieve full utilization of AlN for opto and microelectronic applications is the development of a doping strategy for both donors and acceptors. Ion implantation is a particularly attractive approach since it allows for selected-area doping of semiconductors due to its high spatial and dose control and its high throughput capability. Active layers in the semiconductor are created by implanting a dopant species followed by very high temperature annealing to reduce defects and thereby activate the dopants. Recovery of implant damage in AlN requires excessively high temperature. In this SBIR program we began the investigation by simulation of ion beam implantation profiles for Mg, Ge and Si in AlN over wide dose and energy ranges. Si and Ge are implanted to achieve the n-type doping, Mg is investigated as a p-type doping. The simulation of implantation profiles were performed in collaboration between NRL and Agnitron using a commercial software known as Stopping and Range of Ions in Matter (SRIM). The simulation results were then used as the basis for ion implantation of AlN samples. The implanted samples were annealed by an innovative technique under different conditions and evaluated along the way. Raman spectroscopy and XRD were used to determine the crystal quality of the implanted samples, demonstrating the effectiveness of annealing in removing implant induced damage. Additionally, SIMS was used to verify that a nearly uniform doping profile was achieved near the sample surface. The electrical characteristics

  8. The electronic structures of AlN and InN wurtzite nanowires

    Science.gov (United States)

    Xiong, Wen; Li, Dong-Xiao

    2017-07-01

    We derive the relations between the analogous seven Luttinger-Kohn parameters and six Rashba-Sheka-Pikus parameters for wurtzite semiconductors, which can be used to investigate the electronic structures of some wurtzite semiconductors such as AlN and InN materials, including their low-dimensional structures. As an example, the electronic structures of AlN and InN nanowires are calculated by using the derived relations and six-band effective-mass k · p theory. Interestingly, it is found that the ground hole state of AlN nanowires is always a pure S state whether the radius R is small (1 nm) or large (6 nm), and the ground hole state only contains | Z > Bloch orbital component. Therefore, AlN nanowires is the ideal low-dimensional material for the production of purely linearly polarized π light, unlike ZnO nanowires, which emits plane-polarized σ light. However, the ground hole state of InN nanowires can be tuned from a pure S state to a mixed P state when the radius R is larger than 2.6 nm, which will make the polarized properties of the lowest optical transition changes from linearly polarized π light to plane-polarized σ light. Meanwhile, the valence band structures of InN nanowires will present strong band-crossings when the radius R increases to 6 nm, and through the detail analysis of possible transitions of InN nanowires at the Γ point, we find some of the neighbor optical transitions are almost degenerate, because the spin-orbit splitting energy of InN material is only 0.001 eV. Therefore, it is concluded that the electronic structures and optical properties of InN nanowires present great differences with that of AlN nanowires.

  9. Lateral arrangement of self-assembled GaN islands on periodically stepped AlN surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Brault, J.; Tanaka, S.; Sarigiannidou, E.; Rouviere, J.L.; Daudin, B. [Departement de Recherche Fondamentale sur la Matiere Condensee, SPMM, LPSC, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Nakagawa, H. [Research Institute for Electronic Science, Hokkaido University, Sapporo 060-0812 (Japan); Feuillet, G. [CEA/LETI, DTS/SRD/LaboSiC, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2002-12-01

    The organisation of GaN quantum dots on vicinal (0001) AlN surfaces has been investigated. Such surfaces were obtained using (0001)-misoriented SiC substrates. It is shown that AlN growth leads to a step bunching instability that can be kinetically controlled by temperature. The study of the GaN growth mechanism reveals a preferential alignment along AlN step edges and facets. Finally, the possibility of obtaining an efficient control of the island spatial distribution via step density and periodicity is demonstrated. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  10. Crystal structure, electronic and elastic properties for novel Hf{sub 3}AlN and Zr{sub 3}AlN ceramics explored by first principles studies

    Energy Technology Data Exchange (ETDEWEB)

    Feng Wenxia, E-mail: wxiafeng@yahoo.com [School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252059 (China); Key Laboratory of Optical Communication Science and Technology of Shandong, Liaocheng 252059 (China); Hu Haiquan; Cui Shouxin; Zhang Guiqing; Lv Zengtao; Xiao Xiaoguang [School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252059 (China); Key Laboratory of Optical Communication Science and Technology of Shandong, Liaocheng 252059 (China); Gong Zizheng [National Key Laboratory of Science and Technology on Reliability and Environment Engineering, Beijing Institute of Spacecraft Environment Engineering, Beijing 100094 (China)

    2012-02-01

    Investigations into crystal structure, electronic and elastic properties of M{sub 3}AlN (M=Hf, Zr) had been conducted by plane-wave pseudopotential calculations. The absence of band gap at the Fermi level and the finite value of the density of states at the Fermi energy reveal the metallic behavior of these two compounds. The charge density distributions and density of states indicate that there exist relatively soft Al-M and strong N-M covalent bonds, which might be contributed to layered chemical bonding character of M{sub 3}AlN. By analyzing Cauchy pressure and the bulk modulus to C{sub 44} ratio, Hf{sub 3}AlN was predicted to be more ductile than Zr{sub 3}AlN.

  11. Possibility of AlN vapor phase epitaxy using Li{sub 3}N as a nitrogen source

    Energy Technology Data Exchange (ETDEWEB)

    Kangawa, Y. [Research Institute for Applied Mechanics (RIAM), Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Graduate School of Engineering, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan); Nagano, T. [Graduate School of Engineering, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Kakimoto, K. [Research Institute for Applied Mechanics (RIAM), Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Graduate School of Engineering, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2009-06-15

    Possibility of AlN vapor phase epitaxy using Al and Li{sub 3}N as source materials was investigated. Grown product on sapphire substrate was identified by XRD and Micro-Raman measurements. The results suggest that AlON was formed under Li-N-rich condition though AlN was formed under Al-rich condition. This is because Li{sub 3}N corroded surface of sapphire and oxygen, which is a constituent element of substrate, was incorporated in the product. Moreover, it is found that AlN nano-wire was formed when excessive Al was supplied during growth. These results imply that it is possible to grow AlN by choosing proper conditions especially Li-N/Al ratio. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. AlN synthesis on AlN/SiC template using Li-Al-N solvent

    Energy Technology Data Exchange (ETDEWEB)

    Kangawa, Yoshihiro [RIAM, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan); Kakimoto, Koichi [RIAM, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2010-06-15

    We investigated the possibility of AlN synthesis using Li-Al-N solvent. In this work, Li-Al-N solvent was obtained by heating a mixture composed of Al and Li{sub 3}N. First, we studied the relationship between Al/Li{sub 3}N composition of the initial mixture and shape of obtained crystal. The results showed that polyhedral crystals instead of needle-like crystals were obtained under an Al-rich condition, i.e., 4/3AlN synthesis on an AlN/SiC template under an Al-rich condition. The results suggested that a large AlN single-phase region was formed by using the template. The possibility of growth of bulk AlN using Li-Al-N solvent was shown by the present investigations. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  13. Design and Fabrication of Nanoscale IDTs Using Electron Beam Technology for High-Frequency SAW Devices

    Directory of Open Access Journals (Sweden)

    Wei-Che Shih

    2014-01-01

    Full Text Available High-frequency Rayleigh-mode surface acoustic wave (SAW devices were fabricated for 4G mobile telecommunications. The RF magnetron sputtering method was adopted to grow piezoelectric aluminum nitride (AlN thin films on the Si3N4/Si substrates. The influence of sputtering parameters on the crystalline characteristics of AlN thin films was investigated. The interdigital transducer electrodes (IDTs of aluminum (Al were then fabricated onto the AlN surfaces by using the electron beam (e-beam direct write lithography method to form the Al/AlN/Si3N4/Si structured SAW devices. The Al electrodes were adopted owing to its low resistivity, low cost, and low density of the material. For 4G applications in mobile telecommunications, the line widths of 937 nm, 750 nm, 562 nm, and 375 nm of IDTs were designed. Preferred orientation and crystalline properties of AlN thin films were determined by X-ray diffraction using a Siemens XRD-8 with CuKα radiation. Additionally, the cross-sectional images of AlN thin films were obtained by scanning electron microscope. Finally, the frequency responses of high-frequency SAW devices were measured using the E5071C network analyzer. The center frequencies of the high-frequency Rayleigh-mode SAW devices of 1.36 GHz, 1.81 GHz, 2.37 GHz, and 3.74 GHz are obtained. This study demonstrates that the proposed processing method significantly contributes to high-frequency SAW devices for wireless communications.

  14. Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Maw-Shung Lee

    2014-01-01

    Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

  15. Band alignment of HfO{sub 2}/AlN heterojunction investigated by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Gang [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wang, Hong, E-mail: ewanghong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); CNRS-International-NTU-THALES Research Alliances/UMI 3288, 50 Nanyang Drive, Singapore 637553 (Singapore); Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), Singapore 117608 (Singapore)

    2016-04-18

    The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO{sub 2} was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 0.4 ± 0.2 eV at HfO{sub 2}/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO{sub 2} and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO{sub 2} and AlN.

  16. Effects of AlN Nanoparticles on the Microstructure, Solderability, and Mechanical Properties of Sn-Ag-Cu Solder

    Science.gov (United States)

    Jung, Do-Hyun; Sharma, Ashutosh; Lim, Dong-Uk; Yun, Jong-Hyun; Jung, Jae-Pil

    2017-09-01

    The addition of nanosized AlN particles to Sn-3.0 wt pctAg-0.5 wt pctCu (SAC305) lead-free solder alloy has been investigated. The various weight fractions of AlN (0, 0.03, 0.12, 0.21, 0.60 wt pct) have been dispersed in SAC305 solder matrix by a mechanical mixing and melting route. The influences of AlN nanosized particles on the microstructure, mechanical properties, and solderability ( e.g., spreadability and wettability) have been carried out. The structural and morphological features of the nanocomposite solder were characterized by scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and transmission electron microscope (TEM). The experimental results show that the best combination of solderability and mechanical properties is obtained at 0.21 wt pct AlN in the solder matrix. The reinforced composite solder with 0.21 wt pct AlN nanoparticles shows ≈25 pct improvement in ultimate tensile strength (UTS), and ≈4 pct increase in the spreadability. In addition, the results of microstructural analyses of composite solders indicate that the nanocomposite solder, especially reinforced with 0.21 wt pct of AlN nanoparticles, exhibits better microstructure and improved elongation percentage, compared with the monolithic SAC305 solder.

  17. A study of microclad thickness variation (1987)

    Energy Technology Data Exchange (ETDEWEB)

    Ramachandran, R.S.; Armstrong, K.P.

    1989-06-22

    A study was conducted to investigate the thickness variation of microclad material used in fabricating 1E38 bridges. For the role sampled (nine reels), standard deviations within reels ranged from 6.11 to 12.07 {mu}in. Thickness variations within reels ranged from 16.2 to 40.9 {mu}in., with the average thickness between 142.90 and 161.28 {mu}in.

  18. An array of Eiffel-tower-shape AlN nanotips and its field emission properties

    Science.gov (United States)

    Tang, Yongbing; Cong, Hongtao; Chen, Zhigang; Cheng, Huiming

    2005-06-01

    An array of Eiffel-tower-shape AlN nanotips has been synthesized and assembled vertically with Si substrate by a chemical vapor deposition method at 700 °C. The single-crystalline AlN nanotips along [001] direction, including sharp tips with 10-100 nm in diameter and submicron-sized bases, are distributed uniformly with density of 106-107tips/cm2. Field emission (FE) measurements show that its turn on field is 4.7 V/μm, which is comparable to that of carbon nanotubes, and the fluctuation of FE current is as small as 0.74% for 4 h. It is revealed this nanostructure is available to optimize the FE properties and make the array a promising field emitter.

  19. Quantum chemical study of small AlnBm clusters: Structure and physical properties

    Science.gov (United States)

    Loukhovitski, Boris I.; Sharipov, Alexander S.; Starik, Alexander M.

    2017-08-01

    The structure and physical properties, including rotational constants, characteristic vibrational temperatures, collision diameter, dipole moment, static polarizability, the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO), and formation enthalpy of the different isomeric forms of AlnBm clusters with n + m ⩽ 7 are studied using density functional theory. The search of the structure of isomers has been carried employing multistep hierarchical algorithm. Temperature dependencies of thermodynamic functions, such as enthalpy, entropy, and specific heat capacity, have been determined both for the individual isomers and for the ensembles with equilibrium and frozen compositions for the each class of clusters taking into account the anharmonicity of cluster vibrations and the contribution of their excited electronic states. The prospects of the application of small AlnBm clusters as the components of energetic materials are also considered.

  20. Synthesis of hexagonal monocrystal AlN microtubes and nanowires at low temperature

    Institute of Scientific and Technical Information of China (English)

    Lv Hui-Min; Chen Guang-De; Yan Guo-Jun; Ye Hong-Gang

    2007-01-01

    This paper reports that pure hexagonal aluminium nitride microtubes and nanowires growing along the [0001] direction have been successfully synthesized by directly reacting AlCl3 with NaN3 at low temperature (450℃) under condition of non-solvent system. The grey-white powder of reacting product was characterized by high-resolution transmission electron microscope (HRTEM), which shows that the powder is long straight-wire morphology with outer diameter from 40 nm to 300 nm and length up to several micrometres. The results of both electron diffraction (ED)and x-ray diffraction (XRD) indicate that the AlN microtubes have a pure hexagonal monocrystal tubular structure with the combination of the curled AlN nanobelts. Room-temperature photoluminescence spectrum of the synthesized sample showed an emission peak, which is closely related to the small size of the microtubes.

  1. First-principle Studies on Ferromagnetism of Fe-doped AlN Diluted Magnetic Semiconductors

    Directory of Open Access Journals (Sweden)

    Honglei WU

    2016-11-01

    Full Text Available We have studied the electronic structures and magnetic properties of Fe-doped AlN by first-principles calculations within density functional theory. The calculated results show that AlN crystals doped by double Fe atoms display ferromagnetic properties, and the total magnetic moment is 10.0 µB per 72-atom supercell (3 × 3 × 2. The calculated energy differences between the antiferromagnetic (AFM and ferromagnetic (FM phases are 207 meV, which means FM state is a stable state. It is also found that the 3d-states of Fe dopants and the 2p-states of N atoms bonding to Fe dopants are the main contributors to the density of states at the Fermi level.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.10750

  2. Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

    Science.gov (United States)

    Bessolov, V.; Kalmykov, A.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Poletaev, N.; Rodin, S.

    2017-01-01

    Hydride vapor phase epitaxy (HVPE) growth of semipolar AlN and GaN layers on planar Si(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid-phase epitaxial formation of a specially oriented SiC nucleation layer followed by epitaxy of AlN layer by HVPE at low rates enables growth of aluminum and gallium nitrides in the semipolar direction. For the best GaN(20-23) layers obtained, the full width at half maximum (FWHM) value for the x-ray diffraction rocking curve is 24 arcmin. The photoluminescence spectrum of the semipolar GaN measured at 4 K exhibits bands related to basal-plane and prismatic stacking faults (BSF and PSF).

  3. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia

    2016-12-15

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  4. A 500 year seasonally resolved δ18O and δ13C, layer thickness and calcite fabric record from a speleothem deposited in equilibrium of the Han-sur-Lesse cave, Belgium

    Directory of Open Access Journals (Sweden)

    M. Van Rampelbergh

    2014-10-01

    Full Text Available Speleothem δ18O and δ13C signals have already proven to enable climate reconstructions at high resolution. However, seasonally resolved speleothem records are still scarce and often difficult to interpret in terms of climate due to the multitude of factors that can affect the proxy signals. In this paper, a fast growing (up to 2 mm yr−1 seasonally laminated speleothem from the Han-sur-Lesse cave (Belgium is analyzed for its δ18O and δ13C values, layer thickness and changes in calcite fabric. The studied part of the speleothem covers the most recent 500 years as indicated by layer counting and confirmed by 20 U/Th-ages. Epikarst recharge occurs mainly in winter and lesser during spring and fall. a good correlation can be established between lower winter temperatures and lower winter precipitation (DJF based on the measured data by the Belgian meteorological institute since 1833 indicating that a dry winter is also a cold winter. Colder and dryer winters cause lower winter recharge and generally drier conditions in the cave. Lower winter recharge decreases the amount of isotopically light (δ18O winter precipitation added to the epikarst in comparison to the heavier spring and fall waters, which leads to a net increase in δ18O value of the water in the epikarst. Increased δ18O values in the Proserpine are consequently interpreted to reflect colder and dryer winters. Higher δ13C signals are interpreted to reflect increased prior calcite precipitation (PCP due to colder and dryer winters, when recharge is lower. Thinner layers and darker calcite relate to slower growth and occur when drip rates are low and when the drip water calcium ion concentration is low due to increased PCP, both caused by lower recharge during periods with colder and dryer winters. Exceptionally cold and dry winters cause the drip discharge to decrease under a certain threshold value inducing anomalies in the measured proxy records. Such anomalies occur from 1565 to

  5. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  6. Role of laser pulse duration and gas pressure in deposition of AlN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gyorgy, Eniko; Ristoscu, Carmen; Mihailescu, I. N.; Klini, Argyro; Vainos, N.; Fotakis, C.; Ghica, C.; Schmerber, G.; Faerber, J.

    2001-07-01

    We investigated the relative merits and limits of pulsed laser deposition from AlN targets in vacuum and low-pressure nitrogen in obtaining stoichiometric and crystalline aluminum nitride thin films. We used two UV excimer laser sources ({lambda}=248 nm): a nanosecond system ({tau}{sub FWHM}=30 ns) and, a subpicosecond ({tau}{sub FWHM}=450 fs) system. The obtained structures were characterized by x-ray diffraction, electron microscopy in cross section, selected area electron diffraction, and profilometry. We demonstrated that the best results are obtained with the sub-ps laser source in vacuum and in low pressure nitrogen when the AlN thin films are very pure, crystalline, clearly exhibiting a tendency to epitaxy. Metallic Al is present in the films deposited with the ns laser source. We believe this is an effect of the gradual decomposition of AlN inside the crater on the target surface under multipulse laser irradiation. {copyright} 2001 American Institute of Physics.

  7. Compression Properties of Polyester Needlepunched Fabric

    Directory of Open Access Journals (Sweden)

    Sanjoy Debnath, Ph.D.

    2009-12-01

    Full Text Available In the present paper, a study of the effects of fabricweight, fiber cross-sectional shapes (round, hollowand trilobal and presence of reinforcing materialon the compression properties (initial thickness,percentage compression, percentage thickness lossand percentage compression resilience of polyesterneedle punched industrial nonwoven fabrics ispresented. It was found that for fabrics with noreinforcing material, the initial thickness,compression, and thickness loss were higher thanfabrics with reinforcing material, irrespectiveoffiber cross-section. Compression resilience datashowed the reverse trend. Initial thickness fortrilobal cross-sectional fabric sample was highestfollowed by round and hollow cross-sectionedpolyester needle punched fabrics. The polyesterfabric made from hollow cross-sectioned fibersshowed the least percentage compression at everylevel of fabric weights. The trilobal cross-sectionedpolyester fabric sample showed higher thicknessloss followed by round and hollow cross-sectionedpolyester fabric samples respectively. The hollowcross-sectioned polyester fabric samples showedmaximum compression resilience followed byround and trilobal cross-sectioned polyestersamples irrespective of fabric weights. The initialthickness increases, but percentage compression,thickness loss and compression resilience decreaseswith the increase in fabric weight irrespective offiber cross-sectional shapes.

  8. Optical, Structural and Paramagnetic Properties of Eu-Doped Ternary Sulfides ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y

    Directory of Open Access Journals (Sweden)

    Vítězslav Jarý

    2015-10-01

    Full Text Available Eu-doped ternary sulfides of general formula ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y are presented as a novel interesting material family which may find usage as X-ray phosphors or solid state white light emitting diode (LED lighting. Samples were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, time-resolved photoluminescence spectroscopy, electron paramagnetic resonance, and X-ray excited fluorescence. Corresponding characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra, and decay kinetics curves, were measured and evaluated in a broad temperature range (8–800 K. Calculations including quantum local crystal field potential and spin-Hamiltonian for a paramagnetic particle in D3d local symmetry and phenomenological model dealing with excited state dynamics were performed to explain the experimentally observed features. Based on the results, an energy diagram of lanthanide energy levels in KLuS2 is proposed. Color model xy-coordinates are used to compare effects of dopants on the resulting spectrum. The application potential of the mentioned compounds in the field of white LED solid state lighting or X-ray phosphors is thoroughly discussed.

  9. Gaussian density-functional study for small neutral (Al n ), positive (Al{/n +}) and negative (Al{/n -}) aluminium clusters ( n=2 5)

    Science.gov (United States)

    Calaminici, Patrizia; Russo, Nino; Toscano, Marirosa

    1995-12-01

    The structures and properties of Al n , Al{/n +}, Al{/n -} ( n=1,5) clusters have been investigated by using the Linear Combination of Gaussian Type Orbitals (LCGTO) method, considering Local (LSD) and Non Local (NLSD) Spin Density Approximations and employing a Model Core Potential (MCP) that allows the explicit treatment of 3 s 2 3 p 1 valence electrons. For each system different geometrical structures and electronic states have been considered. For Al3, Al{3/+}, Al{3/-} the most stable geometry proved to be the equilateral triangle ( D 3 h ). Al4 and Al{4/+} prefer the rhombus ( D 2 h ) structure, while the corresponding anion prefers the square ( D 4 h ) one. The trapezoidal form ( C 2 v ) is the most stable isomer for Al5, Al{5/+} and Al{5/-} clusters. The analysis of vibrational frequencies shows that these structures are minima in the potential energy surface. The binding energies ( D e), the adiabatic ionization potentials (IP) and electron affinities (EA), the chemical potentials or absolute hardnesses (η) and electronegativities (χ) have been computed. Results are in good agreement with the available experimental data and the previous high level theoretical computations.

  10. Preparation of highly c-axis oriented AlN thin films on Hastelloy tapes with Y2O3 buffer layer for flexible SAW sensor applications

    Science.gov (United States)

    Peng, Bin; Jiang, Jianying; Chen, Guo; Shu, Lin; Feng, Jie; Zhang, Wanli; Liu, Xinzhao

    2016-02-01

    Highly c-axis oriented aluminum nitrade (AlN) films were successfully deposited on flexible Hastelloy tapes by middle-frequency magnetron sputtering. The microstructure and piezoelectric properties of the AlN films were investigated. The results show that the AlN films deposited directly on the bare Hastelloy substrate have rough surface with root mean square (RMS) roughness of 32.43nm and its full width at half maximum (FWHM) of the AlN (0002) peak is 12.5∘. However, the AlN films deposited on the Hastelloy substrate with Y2O3 buffer layer show smooth surface with RMS roughness of 5.46nm and its FWHM of the AlN (0002) peak is only 3.7∘. The piezoelectric coefficient d33 of the AlN films deposited on the Y2O3/Hastelloy substrate is larger than three times that of the AlN films deposited on the bare Hastelloy substrate. The prepared highly c-axis oriented AlN films can be used to develop high-temperature flexible SAW sensors.

  11. Temperature-dependent microstructural evolution of Ti{sub 2}AlN thin films deposited by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Jin, Hongmei, E-mail: jinhm@ihpc.a-star.edu.sg [Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis 138632 (Singapore); Chai, Jianwei; Pan, Jisheng; Seng, Hwee Leng; Goh, Glen Tai Wei; Wong, Lai Mun [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Sullivan, Michael B. [Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis 138632 (Singapore); Wang, Shi Jie, E-mail: sj-wang@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore)

    2016-04-15

    Graphical abstract: - Highlights: • We investigate microstructural evolution of Ti{sub 2}AlN MAX thin films with temperature. • The film forms a mixture of Ti, Al and (Ti,Al)N cubic solid solution at 500 °C. • The film nucleates into polycrystalline Ti{sub 2}AlN M{sub n+1}AX{sub n} phases at 600 °C. • The film transforms into a single-crystalline Ti{sub 2}AlN (0 0 0 2) thin film at 750 °C. • The mechanisms behind Ti{sub 2}AlN phase transformation with temperature are discussed. - Abstract: Ti{sub 2}AlN MAX-phase thin films have been deposited on MgO (1 1 1) substrates between 500 and 750 °C using DC reactive magnetron sputtering of a Ti{sub 2}Al compound target in a mixed N{sub 2}/Ar plasma. The composition, crystallinity, morphology and hardness of the thin films have been characterized by X-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and nano-indentation, respectively. The film initially forms a mixture of Ti, Al and (Ti,Al)N cubic solid solution at 500 °C and nucleates into polycrystalline Ti{sub 2}AlN MAX phases at 600 °C. Its crystallinity is further improved with an increase in the substrate temperature. At 750 °C, a single-crystalline Ti{sub 2}AlN (0 0 0 2) thin film is formed having characteristic layered hexagonal surface morphology, high hardness, high Young's modulus and low electrical resistivity. The mechanism behind the evolution of the microstructure with growth temperature is discussed in terms of surface energies, lattice mismatch and enhanced adatom diffusion at high growth temperatures.

  12. Structural evolution of Ag-Cu nano-alloys confined between AlN nano-layers upon fast heating.

    Science.gov (United States)

    Janczak-Rusch, J; Chiodi, M; Cancellieri, C; Moszner, F; Hauert, R; Pigozzi, G; Jeurgens, L P H

    2015-11-14

    The structural evolution of a Ag-Cu/AlN nano-multilayer (NML), as prepared by magnetron-sputtering on a α-Al2O3 substrate, was monitored during fast heating by real-time in situ XRD analysis (at the synchrotron), as well as by ex situ microstructural analysis using SEM, XPS and in-house XRD. The as-deposited NML is constituted of alternating nano-layers (thickness ≈ 10 nm) of a chemically inert AlN barrier and a eutectic Ag-Cu(40at%) nano-alloy. The nano-alloy in the as-deposited state is composed of a fcc matrix of Ag nano-grains (≈6 nm), which are supersaturated by Cu, and some smaller embedded Cu rich nano-grains (≈4 nm). Heating up to 265 °C activates segregation of Cu out of the supersaturated Ag nano-grains phase, thus initiating phase separation. At T > 265 °C, the phase-separated Cu metal partially migrates to the top NML surface, thereby relaxing thermally-accumulated compressive stresses in the confined alloy nano-layers and facilitating grain coarsening of (still confined) phase-separated nano-crystallites. Further heating and annealing up to 420 °C results in complete phase separation, forming extended Ag and Cu domains with well-defined coherent Ag/AlN interfaces. The observed outflow of Cu well below the eutectic melting point of the bulk Ag-Cu alloy might provide new pathways for designing low-temperature nano-structured brazing materials.

  13. Fabrication Facilities

    Data.gov (United States)

    Federal Laboratory Consortium — The Fabrication Facilities are a direct result of years of testing support. Through years of experience, the three fabrication facilities (Fort Hood, Fort Lewis, and...

  14. A biomimic thermal fabric with high moisture permeability

    Directory of Open Access Journals (Sweden)

    Fan Jie

    2013-01-01

    Full Text Available Moisture comfort is an essential factor for functional property of thermal cloth, especially for thick thermal cloth, since thick cloth may hinder effective moisture permeation, and high moisture concentration in the micro-climate between skin and fabric would cause cold feeling. Here, we report a biomimic thermal fabric with excellent warm retention and moisture management properties. In this fabric, the warp yarn system constructs many tree-shaped channel nets in the thickness direction of the fabric. Experimental result indicates that the special hierarchic configuration of warp yarns endows the biomimic thermal fabric with a better warm retention and water vapor management properties compared with the traditional fabrics.

  15. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

    Science.gov (United States)

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-05

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

  16. A Comparative Study of Thermal Conductivity and Tribological Behavior of Squeeze Cast A359/AlN and A359/SiC Composites

    Science.gov (United States)

    Shalaby, Essam. A. M.; Churyumov, Alexander. Yu.; Besisa, Dina. H. A.; Daoud, A.; Abou El-khair, M. T.

    2017-07-01

    A comparative study of thermal and wear behavior of squeeze cast A359 alloy and composites containing 5, 10 and 15 wt.% AlN and SiC particulates was investigated. It was pointed out that A359/AlN composites have a superior thermal conductivity as compared to A359 alloy or even to A359/SiC composites. Composites wear characteristics were achieved by pins-on-disk instrument over a load range of 20-60 N and a sliding speed of 2.75 m/s. Results showed that A359/AlN and A359/SiC composites exhibited higher wear resistance values compared to A359 alloy. Moreover, A359/AlN composites showed superior values of wear resistance than A359/SiC composites at relatively high loads. Friction coefficients and contact surface temperature for A359/AlN specimens decreased as AlN content increased, while they increased for A359/SiC. Investigations of worn surfaces revealed that A359/AlN composites were covered up by aluminum nitrides and iron oxides, which acted as smooth layers. However, A359/SiC composites were mainly covered only by iron oxides. The superior thermal conductivity and the significant wear resistance of the developed A359/AlN composites provided a high durable material suitable for industrial applications.

  17. Macro fluid analysis of laminated fabric permeability

    Directory of Open Access Journals (Sweden)

    Qiu Li

    2016-01-01

    Full Text Available A porous jump model is put forward to predict the breathability of laminated fabrics by utilizing fluent software. To simplify the parameter setting process, the methods of determining the parameters of jump porous model by means of fabric layers are studied. Also, effects of single/multi-layer fabrics and thickness on breathability are analyzed, indicating that fabric breathability reduces with the increase of layers. Multi-layer fabric is simplified into a single layer, and the fabric permeability is calculated by proportion. Moreover, the change curve of fabric layer and face permeability, as well as the equation between the fabric layer and the face permeability are obtained. Then, face permeability and pressure-jump coefficient parameters setting of porous jump model could be integrated into single parameter (i. e. fabric layers, which simplifies the fluent operation process and realizes the prediction of laminated fabric permeability.

  18. Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

    Science.gov (United States)

    Nemoz, Maud; Dagher, Roy; Matta, Samuel; Michon, Adrien; Vennéguès, Philippe; Brault, Julien

    2017-03-01

    AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as confirmed by transmission electron microscopy (TEM) images, up to 75%. Moreover, it is found that annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process. In addition, the morphological properties of the films were determined by atomic force microscopy (AFM) and show that the annealing conditions have a strong impact on the surface morphology and roughness. Finally, an annealing at 1550 °C for 20 min appears as an ideal tradeoff to enhance the structural properties while preserving the initial AlN surface morphology.

  19. AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films.

    Science.gov (United States)

    Choi, Hong Rak; Mohanty, Bhaskar Chandra; Kim, Jong Seong; Cho, Yong Soo

    2010-09-01

    AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain εc of only about 1.13% with a saturated crack density ρs of 0.10 μm(-1) and a fracture energy Γ of 49.6 J m(-2). On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in εc was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of εc and ρs.

  20. Electronic Structure Magnetic Properties and Optical Properties of Co-doped AlN from First Principles

    Institute of Scientific and Technical Information of China (English)

    ZHAO Long; LU Peng-Fei; YU Zhong-Yuan; GUO Xiao-Tao; YE Han; YUAN Gui-Fang; SHEN Yue; LIU Yu-Min

    2011-01-01

    The electronic structure, magnetic properties, and optical properties of Co-doped AlN are investigated based upon the Perdew-Burke-Ernzerhof form of generalized gradient approximation within the density functional theory. The band gaps narrowing of Al1-xCoxN are found with the increase of Co concentrations. The analyses of the band structures and density of states show that Al1-xCoxN alloys exhibit a half-metallic character. Moreover, we have succeeded in demonstrating that Co doped AlN system in x = 0.125 is always antiferromagnetic, which is in good agreement with the experimental results. Besides, it is shown that the insertion of Co atom leads to redshift of the optical absorption edge.Finally, the optical constants of pure AlN and Al1-xCoxN alloy, such as loss function, refractive index and reflectivity,are discussed.

  1. Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

    Institute of Scientific and Technical Information of China (English)

    Zhang Yue-Fei; Wang Li; R. Heiderhoff; A. K. Geinzer; Wei Bin; Ji Yuan; Han Xiao-Dong; L. J. Balk; Zhang Ze

    2012-01-01

    The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature.The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3w method.A thermal conductivity of 308 W/m·K withingrains corresponding to that of high-purity single crystal AlN is obtained.The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations,as demonstrated in the electron backscattered diffraction.A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites,as indicated by energy dispersive X-ray spectroscopy.

  2. Development of automated welding processes for field fabrication of thick-walled pressure vessel: electron beam method. Third quarterly report, April 1--June 30, 1978. [2 1/4 Cr--1 Mo steel

    Energy Technology Data Exchange (ETDEWEB)

    Weber, C.M.

    1978-01-01

    An electron beam welding procedure is being developed for welding 8 in. thick SA 387 Grade 22 Class 2 (2/sup 1///sub 4/ Cr--1 Mo) steel. Work is in progress for developing 4/sup 1///sub 2/ inch deep partial penetration electron beam welding procedures. A total of 95 welds has been made to date in the horizontal position. A welding procedure which produces a defect-free weld has not been developed to date.

  3. Substrate Heating Effect on c-Axis Texture and Piezoelectric Properties of AlN Thin Films Deposited by Unbalanced Magnetron Sputtering

    Science.gov (United States)

    Hasheminiasari, Masood; Lin, Jianliang

    2016-06-01

    Aluminum nitride (AlN) thin films with highly preferred (002) orientations have been reactively deposited by a pulsed-closed field unbalanced magnetron sputtering system using TiN/Ti as the seed/adhesion layer with various substrate temperatures. The texture, orientation and piezoelectric properties of AlN films were characterized by means of x-ray diffraction, rocking curves and laser interferometry. A Michelson laser interferometer was designed and built to obtain the converse piezoelectric response of the deposited AlN thin films. It was found that a slight substrate temperature increase would significantly affect the (002) orientation and the piezoelectric coefficient of AlN thin films compared to the coating obtained with no intentional substrate heating, while higher temperature applications on substrate deteriorated the c-axis texture of the coatings without significant improvement in the piezoelectric response of AlN films.

  4. Precise lattice location of substitutional and interstitial Mg in AlN

    CERN Document Server

    Amorim, Lígia Marina; Pereira, Lino Miguel da Costa; Decoster, Stefan; Silva, Daniel José; Silva, Manuel Ribeiro da; Gottberg, Alexander; Correia, João Guilherme; Temst, Kristiaan; Vantomme, André

    2013-01-01

    The lattice site location of radioactive $^{27}$Mg implanted in AlN was determined by means of emission channeling. The majority of the $^{27}$Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. The activation energy for interstitial Mg diffusion is estimated to be between 1.1 eV and 1.7 eV. Substitutional Mg is shown to occupy ideal Al sites within a 0.1 Å experimental uncertainty. We discuss the absence of significant displacements from ideal Al sites in the context of the current debate on Mg doped nitride semiconductors.

  5. Simuliranje izotermnega QUEOS preskusa mešalne faze eksplozije pare Q08

    OpenAIRE

    Leskovar, Matjaž; Mavko, Borut

    2015-01-01

    Mešalna faza eksplozije pare obsega interakcijo curka taline z vodo pred izbruhom eksplozije pare. Da bi bolje spoznali hidrodinamične procese med mešalno fazo eksplozije pare, izvajajo poleg "vročih" preskusov, pri katerih je pomembno uparjanje vode, tudi "hladne" izotermne preskuse. Značilnost izotermnih preskusov mešalne faze eksplozije pare je, da se od vseh treh faz, to je vode, zraka in kroglic, z drugima dvema fazama pomešajo le kroglice, medtem ko ostaneta voda in zrak ločena z gladko...

  6. Electronic properties of AlN crystal doped with Cr, Mn and Fe Author(s:

    Directory of Open Access Journals (Sweden)

    S.V. Syrotyuk

    2013-03-01

    Full Text Available The spin-resolved electronic energy band spectra, as well as partial and total density of electronic states of the crystal AlN, doped with Cr, Mn and Fe, have been evaluated within the projector augmented waves (PAW approach by means of the ABINIT code. The Hartree-Fock exchange for correlated electrons is used to describe the correlated orbitals in the PAW framework. The calculated one-electron energies for electrons of spin up and down are very different. We have found that all the considered crystals are ferromagnetic.

  7. Modeling of the Formation of AlN Precipitates During Solidification of Steel

    Directory of Open Access Journals (Sweden)

    Kalisz D.

    2013-03-01

    Full Text Available The study was carried out computer simulations of the formation process of AlN precipitates in the solidification of steel. The chemical composition of steel and non-metallic inclusions formed was determined using the commercial software FactSage. Calculated amount of precipitates formed during cooling of steel between the liquidus and solidus temperatures under conditions of thermodynamic equilibrium. In parallel, the computations were performed using your own computer program. It was found that aluminum nitride is formed at the final stage of solidification, and the condition of its formation is low oxygen content in steel.

  8. Modeling of the Formation of AlN Precipitates During Solidification of Steel

    Directory of Open Access Journals (Sweden)

    D. Kalisz

    2013-01-01

    Full Text Available The study was carried out computer simulations of the formation process of AlN precipitates in the solidification of steel. The chemical composition of steel and non-metallic inclusions formed was determined using the commercial software FactSage. Calculated amount of precipitates formed during cooling of steel between the liquidus and solidus temperatures under conditions of thermodynamic equilibrium. In parallel, the computations were performed using your own computer program. It was found that aluminum nitride is formed at the final stage of solidification, and the condition of its formation is low oxygen content in steel.

  9. A first-principles study of the properties of four predicted novel phases of AlN

    Science.gov (United States)

    Yang, Ruike; Zhu, Chuanshuai; Wei, Qun; Du, Zheng

    2017-05-01

    Structural, elastic, thermodynamic, electronic and optical properties of four predicted novel AlN phases (Pmn21-AlN, Pbam-AlN, Pbca-AlN and Cmcm-AlN) are calculated using first-principles according to density function theory (DFT). These phases were found using the CALYPSO method but have not yet been synthesized experimentally. Here we predict some of their properties. The properties are analyzed by means of GGA-PBE and PBE0 respectively. The more precision results are obtained by PBE0. Cmcm-AlN owns better plasticity and it's Young's modulus has clearer anisotropy than Pmn21-AlN, Pbam-AlN and Pbca-AlN. The Debye temperature, under higher temperature, shows weak temperature dependence and approach to a constant value. The Dulong-Petit limit of all four novel AlN phases and wz-AlN is about 48 J mol-1 K-1 and they have almost the same temperature law. The band structures show that the four AlN are the wide direct band gap semiconductors, which band gaps are 5.95 (Pmn21-AlN), 5.99 (Pbam-AlN), 5.88 (Pbca-AlN) and 5.59 eV (Cmcm-AlN). The bonding behaviors are the combination of covalent and ionic nature. The dielectric constants, refractive index, reflectivity, absorption, loss spectra, conductivity and Raman spectra are also calculated in detail. All four phases have a lower plasma frequency than of wz-AlN.

  10. Erratic Dislocations within Funnel Defects in AlN Templates for AlGaNEpitaxial Layer Growth

    Energy Technology Data Exchange (ETDEWEB)

    Hawkridge, Michael E; Liliental-Weber, Zuzanna; Jin Kim, Hee; Choi, Suk; Yoo, Dongwon; Ryou, Jae-Hyun; Dupuis, Russel D

    2009-03-13

    We report our transmission electron microscopy observations of erraticdislocation behavior within funnel-like defects in the top of AlN templates filled withAlGaN from an overlying epitaxial layer. This dislocation behavior is observed inmaterial where phase separation is also observed. Several bare AlN templates wereexamined to determine the formation mechanism of the funnels. Our results suggest that they are formed prior to epitaxial layer deposition due to the presence of impuritiesduring template re-growth. We discuss the erratic dislocation behavior in relation to thepresence of the phase-separated material and the possible effects of these defects on the optoelectronic properties.

  11. Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

    Science.gov (United States)

    2013-02-01

    like HEMTs . A nanolayer of AlGaN over GaN provides extra 2DEG charge density because of the piezoelectric effect of the AlGaN layer. The higher...Control of Defects in Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al) GaN ) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

  12. Electron beam welding in the fabrication of thick-walled large-size pipes of C-Mn steels. Final report; Elektronenstrahlschweissen bei der Fertigung von dickwandigen Grossrohren aus C-Mn-Staehlen. Schlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Woeste, K.

    2001-11-01

    This research project investigates electron beam welding as a method of fabrication of large-size pipes with longitudinal welds. The effects of the welding speed on the mechanical and technological properties of the weld are investigated. From the economic view, electron beam welding is much more favourable than submerged-arc welding. [German] Dieses Forschungsprojekt soll dazu beitragen, das Elektronenstrahlschweissen als Fertigungsverfahren fuer laengsnahtgeschweisste Grossrohre zu qualifizieren. Dabei wird der Einfluss der Schweissgeschwindigkeit auf die mechanisch-technologischen Eigenschaften der Schweissung untersucht. Im Wirtschaftlichkeitsvergleich schneidet Elektronenstrahlschweissverfahren gegenueber dem Unterpulverschweissverfahren eindeutig besser ab.

  13. Fabrication for multilayered composite thin films by dual-channel vacuum arc deposition

    Science.gov (United States)

    Dai, Hua; Shen, Yao; Wang, Jing; Xu, Ming; Li, Liuhe; Li, Xiaoling; Cai, Xun; Chu, Paul K.

    2008-06-01

    A flexible dual-channel curvilinear electromagnetic filter has been designed and constructed to fabricate multilayered composite films in vacuum arc ion plating. The filter possesses two guiding channels and one mixing unit. Multilayered TiN /AlN and TiAlN composite films can be produced by controlling the frequency or interval of the two cathodes. The x-ray photoelectron spectroscopy and low-angle x-ray diffraction results reveal the periodic Ti and Al structures in the TiN /AlN films. The TiAlN films exhibit a smooth surface morphology confirming effective filtering of macroparticles by the filter. High temperature oxidation conducted at 700°C for an hour indicates that the weight increment in the TiAlN films produced by the dual filter is only half of that of the TiAlN films produced without a filter, thereby showing better resistance against surface oxidation.

  14. Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications

    Directory of Open Access Journals (Sweden)

    Meng Zhang

    2015-09-01

    Full Text Available In this paper, the piezoelectric coefficient d33 of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy (PFM measurement and finite element method (FEM simulation. Both the sample without a top electrode and another with a top electrode were measured by PFM to characterize the piezoelectric property effectively. To obtain the numerical solution, an equivalent model of the PFM measurement system was established based on theoretical analysis. The simulation results for two samples revealed the effective measurement value d33-test should be smaller than the intrinsic value d33 due to the clamping effect of the substrate and non-ideal electric field distribution. Their influences to the measurement results were studied systematically. By comparing the experimental results with the simulation results, an experimental model linking the actual piezoelectric coefficient d33 with the measurement results d33-test was given under this testing configuration. A novel and effective approach was presented to eliminate the influences of substrate clamping and non-ideal electric field distribution and extract the actual value d33 of AlN thin films.

  15. Time-resolved photoluminescence characterization of oxygen-related defect centers in AlN

    Energy Technology Data Exchange (ETDEWEB)

    Genji, Kumihiro; Uchino, Takashi, E-mail: uchino@kobe-u.ac.jp [Department of Chemistry, Graduate School of Science, Kobe University, Nada, Kobe 657-8501 (Japan)

    2016-07-11

    Time-resolved photoluminescence (PL) spectroscopy has been employed to investigate the emission characteristics of oxygen-related defects in AlN in the temperature region from 77 to 500 K. Two PL components with different decay constants are observed in the near-ultraviolet to visible regions. One is the PL component with decay time of <10 ns and its peak position shifts to longer wavelengths from ∼350 to ∼500 nm with increasing temperature up to 500 K. This PL component is attributed to the radiative relaxation of photoexcited electrons from the band-edge states to the ground state of the oxygen-related emission centers. In the time region from tens to hundreds of nanoseconds, the second PL component emerges in the wavelength region from 300 to 400 nm. The spectral shape and the decay profiles are hardly dependent on temperature. This temperature-independent PL component most likely results from the transfer of photoexcited electrons from the band-edge states to the localized excited state of the oxygen-related emission centers. These results provide a detailed insight into the radiative relaxation processes of the oxygen-related defect centers in AlN immediately after the photoexcitation process.

  16. Early stages of interface reactions between AlN and Ti thin films

    CERN Document Server

    Pinkas, M; Froumin, N; Pelleg, J; Dariel, M P

    2002-01-01

    The early stages of interface reactions between AlN and Ti thin films were investigated using x-ray diffractions, Auger electron spectroscopy, cross section transmission electron microscopy (XTEM), and high resolution XTEM. The AlN/Ti bilayers were deposited on a molybdenum substrate using reactive and nonreactive magnetron sputtering techniques. After deposition, the bilayers were heat treated for 1-10 h at 600 deg. C in a nitrogen atmosphere. Decomposition of the AlN layer took place at the AlN/Ti interface and its products, Al and N, reacted with Ti to produce a AlN/Al sub 3 Ti/Ti sub 2 N/Ti sub 3 Al/alpha-(Ti, Al)ss phase sequence. This phase sequence is not consistent with the Ti-Al-N phase diagram and is believed to be the outcome of the particular conditions that prevail in the thin film and correspond to a particular set of kinetic parameters. A model that explains the development of the phase sequence and predicts its evolution after prolonged heat treatments is put forward. The applicability of such...

  17. Theoretical study of physical and thermodynamic properties of AlnNm clusters*

    Science.gov (United States)

    Loukhovitski, Boris I.; Sharipov, Alexander S.; Starik, Alexander M.

    2016-11-01

    Geometrical structures and physical properties, such as collision diameter, rotational constants, characteristic vibrational temperatures, dipole moment, static isotropic polarizability, enthalpy of formation of various forms of AlnNm clusters with n = 0,...,5, m = 0,...,5, are analyzed with the usage of density functional theory. Different isomeric forms of these clusters with the isomerization energy up to 5 eV have been identified by using the original multistep heuristic algorithm that was based on semiempirical calculations, ab initio and density functional theory approaches and comprises the elements of genetic algorithms. Temperature dependencies of enthalpy, entropy and specific heat capacity have been calculated both for the individual isomers and for the Boltzmann ensemble of each class of clusters taking into account the anharmonicity of cluster vibrations and the contribution of excited electronic states of clusters. Novel criterion of the stability of isomeric forms, based on the maximal vibrational energy of the modes of cluster, has been proposed. The potentialities of the application of small AlnNm clusters as the components of energetic materials are also considered. Supplementary material in the form of one zip file available from the Journal web page at http://dx.doi.org/10.1140/epjd/e2016-70429-5

  18. GaN growth on silane exposed AlN seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz-Zepeda, F. [Posgrado en Fisica de Materiales, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carret, Tijuana-Ensenada, C.P. 22860, Ensenada, B.C. (Mexico); Contreras, O. [Centro de Ciencias de la Materia Condesada, Universidad Nacional Autonoma de Mexico, Apdo. Postal 356, C.P. 22800, Ensenada, B.C. (Mexico); Dadgar, A.; Krost, A. [Otto-von-Guericke-Universitaet Magdeburg, FNW-IEP, Universitaetsplatz 2, 39106 Magdeburg (Germany)

    2008-07-01

    The microstructure and surface morphology of GaN films grown on AlN seed layers exposed to silane flow has been studied by TEM and AFM. The epilayers were grown on silicon(111) substrates by MOCVD. The AlN seed layer surface was treated at different SiH{sub 4} exposure times prior to the growth of the GaN film. A reduction in the density of threading dislocations is observed in the GaN films and their surface roughness is minimized for an optimal SiH{sub 4} exposure time between 75-90 sec. At this optimal condition a step-flow growth mode of GaN film is predominant. The improvement of the surface and structure quality of the epilayers is observed to be related to an annihilation process of threading dislocations done by SiN{sub x} masking. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Nonlinear thickness-stretch vibration of thin-film acoustic wave resonators

    Science.gov (United States)

    Ji, Xiaojun; Fan, Yanping; Han, Tao; Cai, Ping

    2016-03-01

    We perform a theoretical analysis on nonlinear thickness-stretch free vibration of thin-film acoustic wave resonators made from AlN and ZnO. The third-order or cubic nonlinear theory by Tiersten is employed. Using Green's identify, under the usual approximation of neglecting higher time harmonics, a perturbation analysis is performed from which the resonator frequency-amplitude relation is obtained. Numerical calculations are made. The relation can be used to determine the linear operating range of these resonators. It can also be used to compare with future experimental results to determine the relevant thirdand/or fourth-order nonlinear elastic constants.

  20. Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

    Science.gov (United States)

    Mori, Kazuki; Takeda, Kunihiro; Kusafuka, Toshiki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi

    2016-05-01

    We investigated a V-based electrode for the realization of low ohmic-contact resistivity in n-type AlGaN with a high AlN molar fraction characterized by the circular transmission line model. The contact resistivity of n-type Al0.62Ga0.38N prepared using the V/Al/Ni/Au electrode reached 1.13 × 10-6 Ω cm2. Using this electrode, we also demonstrated the fabrication of UV light-emitting diodes (LEDs) with an emission wavelength of approximately 300 nm. An operating voltage of LED prepared using a V/Al/Ni/Au electrode was 1.6 V lower at 100 mA current injection than that prepared using a Ti/Al/Ti/Au electrode, with a specific contact resistance of approximately 2.36 × 10-4 Ω cm2 for n-type Al0.62Ga0.38N.

  1. First principles calculations of formation energies and elastic constants of inclusions α-Al2O3, MgO and AlN in aluminum alloy

    Science.gov (United States)

    Liu, Yu; Huang, Yuanchun; Xiao, Zhengbing; Yang, Chuge; Reng, Xianwei

    2016-05-01

    In this paper, the formation energies and elastic constants of α-Al2O3, MgO and AlN in both rock salt (cubic) and wurtzite (hexagonal) structures were investigated by first principles calculations. The results show that the formation energy being -17.8, -6.3, -3.06 and -3.46 eV/formula unit for α-Al2O3, MgO, AlN (rock salt) and AlN (wurtzite). It suggests that in the ground state, α-Al2O3 is relatively more stable than MgO and AlN. The elastic properties for a polycrystalline in the ground state were calculated with the obtained elastic constants, the elastic properties reveal the rock salt structure AlN is the hardest particles among all the inclusions, and all of these inclusions are classified as brittle materials, which is detrimental to the ductile nature of aluminum matrix. The calculated anisotropy index shows that the AlN (wurtzite) and α-Al2O3 have a lower degree of anisotropy compared with MgO and AlN (rock salt). The calculated results are in good agreement with the values of experimental and other works.

  2. Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures

    Energy Technology Data Exchange (ETDEWEB)

    Ait Aissa, K.; Achour, A., E-mail: a_aminph@yahoo.fr; Camus, J.; Le Brizoual, L.; Jouan, P.-Y.; Djouadi, M.-A.

    2014-01-01

    Aluminium nitride (AlN) films were deposited by dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) on (100) oriented silicon (Si) substrates, in Ar–N{sub 2} gas mixture, at different working pressures. The films were characterized using X-ray diffraction (XRD), profilometer and transmission electron microscopy (TEM). The effect of the sputtering pressure on the structure, the residual stress and the deposition rate of AlN films deposited by the two processes (dcMS and HiPIMS) was investigated. It was found that the deposition rate is always lower in HiPIMS compared to dcMS. The AlN films are textured along (002) direction in both cases of dcMS and HiPIMS as it is indicated by XRD measurements, with residual stresses which are more important in the case of films deposited by HiMIPS. These residual stresses decrease with the sputtering pressure increase, especially in the case of the films deposited by HiPIMS. TEM analyses have shown a local epitaxial growth of AlN on the Si substrate which would favour thermal evacuation improvement of AlN as thermal interface material. - Highlights: • Highly c-axis oriented AlN films were obtained. • dc magnetron sputtering and high power impulse magnetron sputtering (HiMIPS) were used. • Abrupt interface between AlN and silicon substrate was obtained by HiPIMS.

  3. The optical properties and applications of AlN thin films prepared by a helicon sputtering system

    CERN Document Server

    Chiu, W Y; Kao, H L; Jeng, E S; Chen, J S; Jaing, C C

    2002-01-01

    AlN thin films were grown on SiO sub 2 /Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by x-ray diffraction (XRD) and spectroscopic ellipsometer. The optimized films exhibit highly oriented, with only (002) peak shown in a theta-2 theta scan XRD pattern, and extremely smooth surface with rms roughness of 2 Aa. The extinction coefficient of the film was 4x10 sup - sup 4 , which is lower than that of AlN films grown by conventional sputtering. Double-layer antireflection (DLAR) coating using AlN and Al sub 3 O sub 3 grown on quartz has been demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates with the measurement error less than 0.2%. AlN films prepared by Helicon sputtering thus are potential for optical application.

  4. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

    Science.gov (United States)

    Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Zhang, Chun-Min; Lu, Hong-Liang; Wang, Peng-Fei; Zhang, David Wei

    2015-01-01

    Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

  5. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád;

    2013-01-01

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer,...

  6. RETRACTED: P-type Zno thin films fabricated by Al-N co-doping method at different substrate temperature

    Science.gov (United States)

    Yuan, Guodong; Ye, Zhizhen; Qian, Qing; Zhu, Liping; Huang, Jingyun; Zhao, Binghui

    2005-01-01

    This article has been retracted at the request of the Editor-in-Chief. Please see Elsevier Policy on Article Withdrawal ( http://www.elsevier.com/locate/withdrawalpolicy). The editors and publisher would like to confirm the retraction of this paper at the request of the author Guodong Yuan. Reason: The SIMS profile published in this paper had already been included in articles published in Mater. Lett., 58 (2004) 3741-3744, and Thin Solid Films, 484 (2005) 420-425 describing a sample prepared under different conditions. The author did not notify either the Journal of Crystal Growth Editors or the coauthors of this fact. The author apologizes sincerely to the readers, referees, and Editors for violating the guidelines of ethical publication.Also the author apologizes to the coauthors for mishandling of the manuscript.

  7. Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor

    Directory of Open Access Journals (Sweden)

    N. Kurose

    2014-12-01

    Full Text Available We have grown conductive aluminum nitride (AlN layers using the spontaneous via holes formation technique on an n+-Si substrate for vertical-type device fabrication. The size and density of the via holes are controlled through the crystal growth conditions used for the layer, and this enables the conductance of the layer to be controlled. Using this technique, we demonstrate the fabrication of a vertical-type deep ultraviolet (DUV photo-sensor. This technique opens up the possibility of fabrication of monolithically integrated on-chip DUV sensors and DUV light-emitting devices (LEDs, including amplifiers, controllers and other necessary functional circuits, on a Si substrate.

  8. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

    2012-06-29

    GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

  9. Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

    Directory of Open Access Journals (Sweden)

    Wei-Chun Chen

    2012-01-01

    Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

  10. Development of automated welding processes for field fabrication of thick-walled pressure vessels: electron beam method. Eighth quarterly report, 1 July-30 September 1979. [8-inch SA387 Grade 22 Class 2 (2 1/4 Cr-1Mo)

    Energy Technology Data Exchange (ETDEWEB)

    Weber, C.M.

    1979-01-01

    Objective is to develop and demonstrate an electron beam welding procedure for welding 8-inch thick SA 387 Grade 22 Class (2-1/4 Cr-1 Mo) steel. A total of 469 experimental welds have been made to date. Efforts to develop welding procedures which produce defect-free welds have been successfully completed. Techniques for acceptably starting and stopping electron beam welds were developed. Work on developing an EB repair technique is in progress. It has been learned that re-welding of holes, without metal additions, is unacceptable. Work to define the joint fit-up requirements is nearly complete. A considerable amount of joint mismatch can be readily welded and a joint gap opening in excess of 0.100 inch can be welded without alteration of the welding procedure. Another large test plate was welded using equipment with a modified drive. The weld was unacceptable due to porosity. It appears that poor base metal quality is adversely affecting weld quality. Specimens for testing the as-welded mechanical properties have been machined and are being tested.

  11. Digital fabrication

    CERN Document Server

    2012-01-01

    The Winter 2012 (vol. 14 no. 3) issue of the Nexus Network Journal features seven original papers dedicated to the theme “Digital Fabrication”. Digital fabrication is changing architecture in fundamental ways in every phase, from concept to artifact. Projects growing out of research in digital fabrication are dependent on software that is entirely surface-oriented in its underlying mathematics. Decisions made during design, prototyping, fabrication and assembly rely on codes, scripts, parameters, operating systems and software, creating the need for teams with multidisciplinary expertise and different skills, from IT to architecture, design, material engineering, and mathematics, among others The papers grew out of a Lisbon symposium hosted by the ISCTE-Instituto Universitario de Lisboa entitled “Digital Fabrication – A State of the Art”. The issue is completed with four other research papers which address different mathematical instruments applied to architecture, including geometric tracing system...

  12. Photovoltaic fabrics

    Science.gov (United States)

    2015-04-22

    during wire fabrication. Weaving was demonstrated for both military-type nylon -cotton blend (NYCO) warp fibers and cotton-polyester warp fibers. A...Lowell, MA 01852 14. ABSTRACT This report describes a project to improve photovoltaic fabrics. It had four objectives: 1) Efficiency – make PV wires on...a continuous basis that exhibit 7% efficiency; 2) Automated Welding – demonstrate an automated means of interconnecting the electrodes of one wire

  13. Ballistic Response of Fabrics: Model and Experiments

    Science.gov (United States)

    Orphal, Dennis L.; Walker Anderson, James D., Jr.

    2001-06-01

    Walker (1999)developed an analytical model for the dynamic response of fabrics to ballistic impact. From this model the force, F, applied to the projectile by the fabric is derived to be F = 8/9 (ET*)h^3/R^2, where E is the Young's modulus of the fabric, T* is the "effective thickness" of the fabric and equal to the ratio of the areal density of the fabric to the fiber density, h is the displacement of the fabric on the axis of impact and R is the radius of the fabric deformation or "bulge". Ballistic tests against Zylon^TM fabric have been performed to measure h and R as a function of time. The results of these experiments are presented and analyzed in the context of the Walker model. Walker (1999), Proceedings of the 18th International Symposium on Ballistics, pp. 1231.

  14. Electronic and atomic structure of the AlnHn+2 clusters

    DEFF Research Database (Denmark)

    Martinez, Jose Ignacio; Alonso, J.A.

    2008-01-01

    occupied and the lowest unoccupied molecular orbitals (HOMO-LUMO) and, consequently, they are chemically very stable. The largest gap of 2.81 eV occurs for Al6H8. Five clusters of the family, Al4H6, Al5H7, Al6H8, Al7H9, and Al10H12, fulfill the Wade-Mingos rule. That is, in AlnHn+2, the Al matrix forms...... a polyhedron of n vertices and n H atoms form strong H-Al terminal bonds; one pair of electrons is involved in each of those bonds. The remaining n+1 electron pairs form a delocalized cloud over the surface of the Al cage. The clusters fulfilling the Wade-Mingos rule have wider HOMO-LUMO gaps...

  15. Electronic Structure and Magnetic Properties of Cr-Doped AlN

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    To understand the electronic and magnetic properties,we have studied Cr-doped zinc-blende AlN system in detail by applying a first-principle plane wave pseudopotential method based on the density functional theory within the local spin density approximation.The analyses of the band structures,density of states,exchange interactions,and magnetic moments show that Al1-x CrxN alloys may exhibit a half-metallic ferromagnetism character,that Cr in the diluted doping limit forms near-nddgap deep levels,and that the total magnetization of the cell is 3μB per Cr atom,which does not change with Cr concentration.Moreover,we have succeeded in predicting that Al1-xCrxN alloys in x=0.0625 has a very high Curie temperature,and find that ferromagnetic exchange interaction between magnetic dopants is short-ranged.

  16. Properties of AlN films deposited by reactive ion-plasma sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bert, N. A.; Bondarev, A. D.; Zolotarev, V. V.; Kirilenko, D. A.; Lubyanskiy, Ya. V.; Lyutetskiy, A. V.; Slipchenko, S. O.; Petrunov, A. N.; Pikhtin, N. A., E-mail: nike@hpld.ioffe.ru; Ayusheva, K. R.; Arsentyev, I. N.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2015-10-15

    The properties of SiO{sub 2}, Al{sub 2}O{sub 3}, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film.

  17. Ion implantation of Cd and Ag into AlN and GaN

    CERN Document Server

    Miranda, Sérgio M C; Correia, João Guilherme; Vianden, Reiner; Johnston, Karl; Alves, Eduardo; Lorenz, Katharina

    2012-01-01

    GaN and AlN thin films were implanted with cadmium (Cd) or silver (Ag), to fluences ranging from 1×1013 to 1.7 × 1015 at/cm$^{2}$. The implanted samples were annealed at 950 ºC under flowing nitrogen. While implantation damage could be fully removed for the lowest fluences, for higher fluences the crystal quality was only partially recovered. For the high fluence samples the lattice site location of the ions was studied by Rutherford Backscattering/ channelling (RBS/C). Cd ions are found to be incorporated in substitutional cation sites (Al or Ga) while Ag is slightly displaced from this position. To further investigate the incorporation sites, Perturbed Angular Correlation (PAC) measurements were performed and the electric field gradients at the site of the probe nuclei were determined.

  18. Schottky contact formation on polar and non-polar AlN

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, Pramod; Bryan, Isaac; Bryan, Zachary; Tweedie, James; Kirste, Ronny; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)

    2014-11-21

    The interfaces of m- and c-plane AlN with metals of different work functions and electro-negativities were characterized and the Schottky barrier heights were measured. The Schottky barrier height was determined by measuring the valence band maximum (VBM) with respect to the Fermi level at the surface (interface) before (after) metallization. VBM determination included accurate modeling and curve fitting of density of states at the valence band edge with the XPS data. The experimental behavior of the barrier heights could not be explained by the Schottky-Mott model and was modeled using InterFace-Induced Gap States (IFIGS). A slope parameter (S{sub X}) was used to incorporate the density of surface states and is a measure of Fermi level pinning. The experimental barriers followed theoretical predictions with a barrier height at the surface Fermi level (Charge neutrality level (CNL)) of ∼2.1 eV (∼2.7 eV) on m-plane (c-plane) and S{sub X} ∼ 0.36 eV/Miedema unit. Slope parameter much lower than 0.86 implied a surface/interface states dominated behavior with significant Fermi level pinning and the measured barrier heights were close to the CNL. Titanium and zirconium provided the lowest barriers (1.6 eV) with gold providing the highest (2.3 eV) among the metals analyzed on m-plane. It was consistently found that barrier heights decreased from metal polar to non-polar surfaces, in general, due to an increasing CNL. The data indicated that charged IFIGS compensate spontaneous polarization charge. These barrier height and slope parameter measurements provided essential information for designing Schottky diodes and other contact-based devices on AlN.

  19. 3D magnetotelluric modelling of the Alnö alkaline and carbonatite ring complex, central Sweden

    Science.gov (United States)

    Yan, Ping; Andersson, Magnus; Kalscheuer, Thomas; García Juanatey, María A.; Malehmir, Alireza; Shan, Chunling; Pedersen, Laust B.; Almqvist, Bjarne S. G.

    2016-06-01

    Thirty-four broadband magnetotelluric stations were deployed across the Alnö alkaline and carbonatite ring intrusion in central Sweden. The measurements were designed such that both 2D models along existing seismic profiles and a 3D model can be constructed. Alnö Island and surrounding areas are densely populated and industrialized and in order to reduce the effect of noise, the remote reference technique was utilized in time series processing. Strike and dimensionality analyses together with the induction arrows show that there is no homogeneous regional strike direction in this area. Therefore, only the determinant of the impedance tensor was used for 2D inversion whereas all elements of the impedance tensor were used for 3D inversion. Representative rock samples were collected from existing outcrops and their resistivities were measured in the laboratory to facilitate interpretation of the inversion models. The results from these measurements show that coarse-grained (sövite, white color) and fine-grained (dark color) carbonatites are the most conductive and resistive rock types, respectively. In accordance with the interpretation of the reflection seismic images, the 2D and 3D resistivity models depict the caldera-related ring-type fault system and updoming faulted and fractured systems as major 10-500 Ωm conductors, extending down to about 3 km depth. A central ~ 4000 Ωm resistive unit at about 3 km depth appears to correspond to a solidified fossil magma chamber as speculated from the reflection seismic data and earlier field geological studies.

  20. Intraocular lens fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, M.A.; Foreman, L.R.

    1997-07-08

    This invention describes a method for fabricating an intraocular lens made from clear Teflon{trademark}, Mylar{trademark}, or other thermoplastic material having a thickness of about 0.025 millimeters. These plastic materials are thermoformable and biocompatable with the human eye. The two shaped lenses are bonded together with a variety of procedures which may include thermosetting and solvent based adhesives, laser and impulse welding, and ultrasonic bonding. The fill tube, which is used to inject a refractive filling material is formed with the lens so as not to damage the lens shape. A hypodermic tube may be included inside the fill tube. 13 figs.

  1. Intraocular lens fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Mike A. (Albuquerque, NM); Foreman, Larry R. (Los Alamos, NM)

    1997-01-01

    This invention describes a method for fabricating an intraocular lens made rom clear Teflon.TM., Mylar.TM., or other thermoplastic material having a thickness of about 0.025 millimeters. These plastic materials are thermoformable and biocompatable with the human eye. The two shaped lenses are bonded together with a variety of procedures which may include thermosetting and solvent based adhesives, laser and impulse welding, and ultrasonic bonding. The fill tube, which is used to inject a refractive filling material is formed with the lens so as not to damage the lens shape. A hypodermic tube may be included inside the fill tube.

  2. The thickness of glaciers

    Science.gov (United States)

    Faraoni, Valerio; Vokey, Marshall W.

    2015-09-01

    Basic formulae and results of glacier physics appearing in glaciology textbooks can be derived from first principles introduced in algebra-based first year physics courses. We discuss the maximum thickness of alpine glaciers and ice sheets and the relation between maximum thickness and length of an ice sheet. Knowledge of ordinary differential equations allows one to derive also the local ice thickness.

  3. Screen printed thick film based pMUT arrays

    DEFF Research Database (Denmark)

    Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain;

    2008-01-01

    This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

  4. Effect of pre-deposition RF plasma etching on wafer surface morphology and crystal orientation of piezoelectric AlN thin films.

    Science.gov (United States)

    Felmetsger, V; Mikhov, M; Laptev, P

    2015-02-01

    In this work, we describe the design and operation of a planarized capacitively coupled RF plasma module and investigate the effects of non-reactive RF plasma etching on Si (100) wafer surface morphology and crystal orientation of Al bottom electrodes and subsequently deposited AlN films. To ensure formation of highly (111) textured Al electrode, a thin 25-nm AlN seed layer was grown before the Al deposition. The seed layer's orientation efficiency improved with increasing the RF power from 70 to 300 W and resulted in narrowing the Al (111) rocking curves. AFM and XRD data have shown that crystal orientations of both the electrode and reactively sputtered AlN film are considerably improved when the substrate micro roughness is reduced from an ordinary level of a few nanometers to atomic level corresponding to root mean square roughness as low as about 0.2 to 0.3 nm. The most perfectly crystallized film stacks of 100-nm Al and 500-nm AlN were obtained in this work using etching in Ar plasma optimized to create an atomically smooth, epi-ready Si surface morphology that enables superior AlN seed layer nucleation conditions. X-ray rocking curves around the Al (111) and AlN (0002) diffraction peaks exhibited extremely low FWHM values of 0.68° and 1.05°, respectively.

  5. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Mazumder, Baishakhi; Kaun, Stephen W.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lu, Jing; Keller, Stacia; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2013-03-18

    Atom probe tomography was used to characterize AlN interlayers in AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy (PAMBE), NH{sub 3}-based molecular beam epitaxy (NH{sub 3}-MBE), and metal-organic chemical vapor deposition (MOCVD). The PAMBE-grown AlN interlayer had the highest purity, with nearly 100% of group-III sites occupied by Al. The group-III site concentrations of Al for interlayers grown by NH{sub 3}-MBE and MOCVD were {approx}85% and {approx}47%, respectively. Hall measurements were performed to determine the two-dimensional electron gas mobility and sheet concentration. Sheet concentrations were {approx}25%-45% higher with molecular beam epitaxy than with MOCVD, and these results matched well with atom probe data.

  6. Combinatorial approach to MgHf co-doped AlN thin films for Vibrational Energy Harvesters

    Science.gov (United States)

    Nguyen, H. H.; Oguchi, H.; Kuwano, H.

    2016-11-01

    In this report, we studied MgHf co-doped AlN ((Mg,Hf)xA11-xN) aiming for developing an AlN-based dielectric material with the large piezoelectric coefficient. To rapidly screen the wide range of composition, we applied combinatorial film growth approach. To get continuous composition gradient on a single substrate, films were deposited on Si (100) substrates by sputtering AlN and Mg-Hf targets simultaneously. Crystal structure was investigated by X-ray diffractometer equipped with a two-dimensional detector (2D-XRD). Composition was determined by Energy Dispersive Spectroscopy (EDS). These studies revealed that we successfully covered the widest ever composition range of 0 x x = 0.24, which will lead to the highest enhancement in the piezoelectric coefficient. The results of this study opened the way for high-throughput development of the dielectric materials.

  7. Continuous order-disorder phase transition (2 x 2){yields}(1 x 1) on the (0001)AlN surface

    Energy Technology Data Exchange (ETDEWEB)

    Mansurov, V.G.; Galitsyn, Yu.G.; Nikitin, A.Yu.; Kolosovsky, E.A.; Zhuravlev, K.S. [Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. ak. Lavrent' eva 13, Novosibirsk 630090 (Russian Federation); Osvath, Z.; Dobos, L.; Horvath, Z.E.; Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary)

    2007-06-15

    Smooth (0001)AlN surface on a (0001) sapphire substrate was prepared by ammonia Molecular Beam Epitaxy. A continuous (2 x 2){yields}(1 x 1) reconstruction phase transition on the (0001)AlN surface under ammonia flux was experimentally investigated by RHEED. The intensity of a fractional (0 1/2) streak was studied as a function of the sample temperature under different ammonia fluxes. The temperature of the transition increases with increasing of the ammonia flux (an effective activation energy is about 1.3 eV). The phase transition is described in the frame of the Bethe-Peierls approximation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Generating Tunable Magnetism in AlN Nanoribbons Using Anion/Cation Vacancies:a First-Principles Prediction

    Science.gov (United States)

    Chegeni, Mahdieh; Beiranvand, Razieh; Valedbagi, Shahoo

    2017-04-01

    Using first-principles approach, we theoretically study the effect of anion/cation vacancies on structural and electro-magnetic properties of zigzag AlN nanoribbons (ZAlNNRs). Calculations were performed using a full spin-polarized method within the density functional theory (DFT). Our findings shed light on how the edge states combined with vacancy engineering can affect electro-magnetic properties of ZAlNNRs. We found that depending on the nature and number of vacancies, ZAlNNRs can design as half-metal or semiconductor. Our results reveal a significant amount of spin magnetic moment for ZAlNNR with Al vacancies (VAl). These results may open new applications of AlN nano-materials in spintronics.

  9. Theoretical investigations of phonon intrinsic mean-free path in zinc-blende and wurtzite AlN

    Science.gov (United States)

    Alshaikhi, A.; Srivastava, G. P.

    2007-11-01

    We present theoretical investigations of the anharmonic phonon mean-free path in cubic and hexagonal AlN. The cubic anharmonicity in crystal potential has been modeled within an anharmonic elastic continuum model. Numerical calculations have been carried out within the Fermi’s golden rule scheme and by using the phonon dispersion and group velocity results from a full lattice dynamical model. The calculated mean-free path results for both crystal phases are compared with estimates made previously by Watari [J. Mater. Res. 17, 2940 (2002)] for the hexagonal phase, and a discussion on the level of agreement is provided. Our work predicts that at room temperature and above, the average phonon mean-free path for the zinc-blende phase is approximately four times that for the wurtzite phase, suggesting that AlN will exhibit far better high thermal conductivity behavior in its cubic phase.

  10. Generating Tunable Magnetism in AlN Nanoribbons Using Anion/Cation Vacancies:a First-Principles Prediction

    Science.gov (United States)

    Chegeni, Mahdieh; Beiranvand, Razieh; Valedbagi, Shahoo

    2017-01-01

    Using first-principles approach, we theoretically study the effect of anion/cation vacancies on structural and electro-magnetic properties of zigzag AlN nanoribbons (ZAlNNRs). Calculations were performed using a full spin-polarized method within the density functional theory (DFT). Our findings shed light on how the edge states combined with vacancy engineering can affect electro-magnetic properties of ZAlNNRs. We found that depending on the nature and number of vacancies, ZAlNNRs can design as half-metal or semiconductor. Our results reveal a significant amount of spin magnetic moment for ZAlNNR with Al vacancies (VAl). These results may open new applications of AlN nano-materials in spintronics.

  11. Properties of honeycomb polyester knitted fabrics

    Science.gov (United States)

    Feng, A. F.

    2016-07-01

    The properties of honeycomb polyester weft-knitted fabrics were studied to understand their advantages. Seven honeycomb polyester weft-knitted fabrics and one common polyester weft-knitted fabric were selected for testing. Their bursting strengths, fuzzing and pilling, air permeability, abrasion resistance and moisture absorption and perspiration were studied. The results show that the honeycomb polyester weft-knitted fabrics have excellent moisture absorption and liberation. The smaller their thicknesses and area densities are, the better their moisture absorption and liberation will be. Their anti-fuzzing and anti-pilling is good, whereas their bursting strengths and abrasion resistance are poorer compared with common polyester fabric's. In order to improve the hygroscopic properties of the fabrics, the proportion of the honeycomb microporous structure modified polyester in the fabrics should not be less than 40%.

  12. Surface characterization and luminescence properties of AlN doped with RE elements (Sm, Ho, Gd, Tm)

    OpenAIRE

    Balogun, Ismail Ayodele

    2015-01-01

    Rare‐ earth (RE)‐doped III‐nitride broad band‐gap semiconductors have attracted enormous interest as a foundation for optoelectronics devices, which combine the unique luminescence feature of Rare‐earth ions with the electronic properties of the semiconductors. Recent progress toward nitride‐based light emitting diode and light emitting due to electric current devices have been made using crystalline and amorphous AlN and GaN doped with a different lanthanide elements. The Rare‐earth...

  13. The Effect of Various Fabric Parameters on the Sound Absorption Properties of Circular Knitted Spacer Fabrics

    Directory of Open Access Journals (Sweden)

    Arzu Marmaralı

    2014-07-01

    Full Text Available Spacer fabrics which can be produced through weaving or nonwoven technique beside warp knitting and weft knitting processes, can be used for functional applications such as automotive textiles, medical textiles, geotextiles, sportswear, protective textiles and composites due to the possibility of using a variety of different materials, flexible product range and the three dimensional construction. Additionally they can also be used for sound absorption applications with different pore geometry. In this study, the effect of fabric parameters like material type, fabric thickness and surface structures on the sound absorption properties of circular knitted spacer fabrics was investigated and aimed to determine the optimum fabric parameters for better sound absorption.

  14. Status report, canister fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Andersson, Claes-Goeran; Eriksson, Peter; Westman, Marika [Swedish Nuclear Fuel and Waste Management Co., Stockholm (Sweden); Emilsson, Goeran [CSM Materialteknik AB, Linkoeping (Sweden)

    2004-06-01

    The report gives an account of the development of material and fabrication technology for copper canisters with cast inserts during the period from 2000 until the start of 2004. The engineering design of the canister and the choice of materials in the constituent components described in previous status reports have not been significantly changed. In the reference canister, the thickness of the copper shell is 50 mm. Fabrication of individual components with a thinner copper thickness is done for the purpose of gaining experience and evaluating fabrication and inspection methods for such canisters. As a part of the development of cast inserts, computer simulations of the casting processes and techniques used at the foundries have been performed for the purpose of optimizing the material properties. These properties have been evaluated by extensive tensile testing and metallographic inspection of test material taken from discs cut at different points along the length of the inserts. The testing results exhibit a relatively large spread. Low elongation values in certain tensile test specimens are due to the presence of poorly formed graphite, porosities, slag or other casting defects. It is concluded in the report that it will not be possible to avoid some presence of observed defects in castings of this size. In the deep repository, the inserts will be exposed to compressive loading and the observed defects are not critical for strength. An analysis of the strength of the inserts and formulation of relevant material requirements must be based on a statistical approach with probabilistic calculations. This work has been initiated and will be concluded during 2004. An initial verifying compression test of a canister in an isostatic press has indicated considerable overstrength in the structure. Seamless copper tubes are fabricated by means of three methods: extrusion, pierce and draw processing, and forging. It can be concluded that extrusion tests have revealed a

  15. Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited on c-Plane Sapphire

    Directory of Open Access Journals (Sweden)

    Sheng-Rui Jian

    2012-01-01

    Full Text Available The mechanical properties and deformation behaviors of AlN thin films deposited on c-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nanoindentation and cross-sectional transmission electron microscopy (XTEM. The load-displacement curves show the “pop-ins” phenomena during nanoindentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nanoindentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young’s modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively.

  16. Radiative Properties of Ceramic Al2O3, AlN and Si3N4—II: Modeling

    Science.gov (United States)

    Yang, Peiyan; Cheng, Qiang; Zhang, Zhuomin

    2017-08-01

    In Part I of this study (Cheng et al. in Int J Thermophys 37: 62, 2016), the reflectance and transmittance of dense ceramic plates were measured at wavelengths from 0.4 μm to about 20 μm. The samples of Al2O3 and AlN are semitransparent in the wavelength region from 0.4 μm to about 7 μm, where volume scattering dominates the absorption and scattering behaviors. On the other hand, the Si3N4 plate is opaque in the whole wavelength region. In the mid-infrared region, all samples show phonon vibration bands and surface reflection appears to be strong. The present study focuses on modeling the radiative properties and uses an inverse method to obtain the scattering and absorption coefficients of Al2O3 and AlN in the semitransparent region from the measured directional-hemispherical reflectance and transmittance. The scattering coefficient is also predicted using Mie theory for comparison. The Lorentz oscillator model is applied to fit the reflectance spectra of AlN and Si3N4 from 1.6 μm to 20 μm in order to obtain their optical constants. It is found that the phonon modes for Si3N4 are much stronger in the polycrystalline sample studied here than in amorphous films reported previously.

  17. Fabrication of aluminum nitride and its stability in liquid alkali metals

    Energy Technology Data Exchange (ETDEWEB)

    Natesan, K.; Rink, D.L. [Argonne National Lab., Chicago, IL (United States)

    1995-04-01

    The objective of this task are to (a) evaluate several fabrication procedures for development of aluminum nitride (AlN) coatings on the candidate first-wall structural material V-5wt.%Cr-5wt.%Ti, (b) evaluate the stability of coatings in contact with the structural alloy and liquid Li at temperatures of 200 to 400{degrees}C, (c) measure the electrical resistivity of the coated films after exposure to liquid Li, (d) evaluate the effects of coating defects on electrical resistivity, and (e) establish in-situ repair procedures to maintain adequate electrical insulating properties for the coatings.

  18. Long thickness-extensional waves in thin film bulk acoustic wave filters affected by interdigital electrodes.

    Science.gov (United States)

    Liu, Jing; Du, Jianke; Wang, Ji; Yang, Jiashi

    2017-03-01

    We studied free vibrations of thin-film bulk acoustic wave filters with interdigital electrodes theoretically using the scalar differential equations by Tiersten and Stevens. The filters are made from AlN or ZnO films on Si substrates with ground and driving electrodes. They operate with thickness-extensional modes. The basic vibration characteristics including resonant frequencies and mode shapes were obtained. Their dependence on various geometric parameters was examined. It was found that for properly design filters there exist trapped modes whose vibrations are strong in regions with a driving electrode and decay away from the electrode edges. These trapped modes are essentially long plate thickness-extensional modes modulated by the electrode fingers. The number of trapped modes is sensitive to the geometric parameters.

  19. Fabrication Technology

    Energy Technology Data Exchange (ETDEWEB)

    Blaedel, K.L.

    1993-03-01

    The mission of the Fabrication Technology thrust area is to have an adequate base of manufacturing technology, not necessarily resident at Lawrence Livermore National Laboratory (LLNL), to conduct the future business of LLNL. The specific goals continue to be to (1) develop an understanding of fundamental fabrication processes; (2) construct general purpose process models that will have wide applicability; (3) document findings and models in journals; (4) transfer technology to LLNL programs, industry, and colleagues; and (5) develop continuing relationships with the industrial and academic communities to advance the collective understanding of fabrication processes. The strategy to ensure success is changing. For technologies in which they are expert and which will continue to be of future importance to LLNL, they can often attract outside resources both to maintain their expertise by applying it to a specific problem and to help fund further development. A popular vehicle to fund such work is the Cooperative Research and Development Agreement with industry. For technologies needing development because of their future critical importance and in which they are not expert, they use internal funding sources. These latter are the topics of the thrust area. Three FY-92 funded projects are discussed in this section. Each project clearly moves the Fabrication Technology thrust area towards the goals outlined above. They have also continued their membership in the North Carolina State University Precision Engineering Center, a multidisciplinary research and graduate program established to provide the new technologies needed by high-technology institutions in the US. As members, they have access to and use of the results of their research projects, many of which parallel the precision engineering efforts at LLNL.

  20. Fabrication Technology

    Energy Technology Data Exchange (ETDEWEB)

    Blaedel, K.L.

    1993-03-01

    The mission of the Fabrication Technology thrust area is to have an adequate base of manufacturing technology, not necessarily resident at Lawrence Livermore National Laboratory (LLNL), to conduct the future business of LLNL. The specific goals continue to be to (1) develop an understanding of fundamental fabrication processes; (2) construct general purpose process models that will have wide applicability; (3) document findings and models in journals; (4) transfer technology to LLNL programs, industry, and colleagues; and (5) develop continuing relationships with the industrial and academic communities to advance the collective understanding of fabrication processes. The strategy to ensure success is changing. For technologies in which they are expert and which will continue to be of future importance to LLNL, they can often attract outside resources both to maintain their expertise by applying it to a specific problem and to help fund further development. A popular vehicle to fund such work is the Cooperative Research and Development Agreement with industry. For technologies needing development because of their future critical importance and in which they are not expert, they use internal funding sources. These latter are the topics of the thrust area. Three FY-92 funded projects are discussed in this section. Each project clearly moves the Fabrication Technology thrust area towards the goals outlined above. They have also continued their membership in the North Carolina State University Precision Engineering Center, a multidisciplinary research and graduate program established to provide the new technologies needed by high-technology institutions in the US. As members, they have access to and use of the results of their research projects, many of which parallel the precision engineering efforts at LLNL.

  1. Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Kurai, Satoshi, E-mail: kurai@yamaguchi-u.ac.jp; Yamada, Yoichi [Department of Material Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611 (Japan); Miyake, Hideto; Hiramatsu, Kazumasa [Department of Electrical and Electronic Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507 (Japan)

    2016-01-14

    Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with Si concentrations of 3.0–37 × 10{sup 17 }cm{sup −3} were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractions of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of V{sub Al} did not contribute to the linewidth broadening, unlike the case of the V{sub Al} clusters.

  2. Development of plating thickness standards. Milestone report

    Energy Technology Data Exchange (ETDEWEB)

    Russell, R.J.

    1978-01-01

    Standards which are unavailable from the National Bureau of Standards were developed to support the nondestructive measurement of plating thickness. Their fabrication, measurement, certification, and calibration-recall schedule are discussed. Reference standards that have been put into service include aluminum/Kapton, silver/copper, tin/steel, gold/silver, cadmium/Kovar, silver/iron, rhodium/copper, and gold/ceramic. 6 figures, 3 tables.

  3. Education and "Thick" Epistemology

    Science.gov (United States)

    Kotzee, Ben

    2011-01-01

    In this essay Ben Kotzee addresses the implications of Bernard Williams's distinction between "thick" and "thin" concepts in ethics for epistemology and for education. Kotzee holds that, as in the case of ethics, one may distinguish between "thick" and "thin" concepts of epistemology and, further, that this distinction points to the importance of…

  4. Thick film hydrogen sensor

    Science.gov (United States)

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  5. Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

    Directory of Open Access Journals (Sweden)

    Chodun Rafal

    2015-12-01

    Full Text Available Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.

  6. MBE growth of cubic AlN on 3C-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Schupp, Thorsten; Lischka, Klaus; As, Donat Josef [Department of Physics, University of Paderborn, Warburger Str. 100, 33095 Paderborn (Germany); Rossbach, Georg; Schley, Pascal; Goldhahn, Ruediger [Institut fuer Physik, Technische Universitaet Ilmenau, PF 100565, 98684 Ilmenau (Germany); Roeppischer, Marcus; Esser, Norbert; Cobet, Christoph [Department Berlin, ISAS - Institute for Analytical Sciences, Albert-Einstein-Str. 9, 12489 Berlin (Germany)

    2010-06-15

    We present our recent results on the growth of cubic AlN (001) layers by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3C-SiC (001) substrate. For high-quality c-AlN layers reflection high-electron energy diffraction (RHEED) patterns in all azimuths show RHEED patterns of the cubic lattice, hexagonal reflections are absent. High-resolution X-ray diffraction (HRXRD) measurements confirm the cubic structure of the c-AlN layers with a lattice parameter of 4.373A. Atomic force microscopy (AFM) scans show an atomically smooth surface with a roughness of 0.2 nm RMS. Ellipsometry studies yield the dielectric function (DF) of c-AlN from 1 to 10 eV. The direct gap is determined with 5.93 eV at room temperature, while the indirect one is below 5.3 eV (onset of adsorption). The high-energy part of the DF is dominated by two transitions at 7.20 and 7.95 eV attributed to critical points of the band structure. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  7. Preparation of Al- AlN Bonded Corundum Based Refractories by in-situ Reaction

    Institute of Scientific and Technical Information of China (English)

    ZHU Boquan; FANG Binxiang; ZHANG Wenjie

    2008-01-01

    The Al-AlN bonded corundum based refractories was synthesized with the starting materials of fused alu-mina and metallic aluminium in nitrogen atmosphere through in-situ reaction. The study indicated that with the addition of 14% metallic aluminium (13% of Al powder and 1% of Al fiber) , the material nitridized at 1 100 ℃ for 3 h has excellent physical properties. It is found that a massive quantity of AlN in the forms of both whiskers" and hexagon pellet particles is formed, and a large quantity of Al remained in the matrix. This multiple bonding system resulted in the excellent me-chanical properties of the material. It is also found that the hydration tendency of the prepared material is inhib-ited, and the material exhibited excellent thermal shock resistance. The nature of protective oxidation of the bonding system is characterized. Thus, this material may become a new candidate of carbon-free sliding plate material for continuous casting.

  8. Performances of AlN coatings as hydrogen isotopes permeation barriers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jie; Li, Qun; Xiang, Qing-Yun; Cao, Jiang-Li, E-mail: perov@sina.com

    2016-01-15

    Highlights: • The D-PRF of AlN-HIPB was studied. • The morphologies of AlN-HIPB remained compact after deuterium permeation tests. • The diffraction peaks maintained stable. • The nano-hardness increased after the deuterium permeation tests. - Abstract: Hydrogen isotope permeation barriers (HIPB) have great potential applications in the fields of hydrogen energy and thermonuclear fusion. In this study, the AlN-HIPB were prepared on 316 L stainless steel by RF magnetron sputtering. The properties of AlN-HIPB were studied, including the deuterium permeation reduced factor (D-PRF), structures and nano-hardness. The D-PRF of 0.4 μm AlN-HIPB could reach 36 at 600 °C, and gradually rise with decreasing permeation temperature. The D-PRF reached 53 at 400 °C and 144 at 250 °C, respectively. The coatings remained dense and the grains were spherical after the deuterium permeation test. The AlN (1 0 0) diffraction peaks appeared and maintained stable during the deuterium permeation process. The nano-hardness of the coatings increased from 5.96 GPa to 7.41 GPa and the elasticity modulus also increased from 156.6 GPa to 210.6 GPa after the deuterium permeation.

  9. A computational study on the application of AlN nanotubes in Li-ion batteries

    Science.gov (United States)

    Anaraki-Ardakani, Hossein

    2017-03-01

    We investigated the potential application of the AlN nanotubes (AlNNTs) in Li-ion batteries by means of the density functional theory calculations. To this aim, the interaction of Li atom and Li+ cation with (3 , 3), (4 , 4), (5 , 5), (6 , 6), and (7 , 7) armchair AlNNTs was investigated. By decreasing the curvature of these nanotubes, the HOMO and LUMO levels are shifted to lower and higher energies, thereby enlarging the energy gap. It was found that AlNNTs can produce larger cell voltage in comparison to the carbon nanotubes and may be promising candidate for application in the anode electrode of Li-ion batteries. The calculated cell voltage is in the range of 1.66 to 1.84 V which is significantly increased by increasing the diameter of AlNNTs. The adsorptions of Li and Li+ on the exterior surface of AlNNTs are more favorable than those on its exterior surface. We showed that the interaction of atomic Li with the surface of the AlNNT plays the main rule in determining the cell voltage because of its large dependency on the tube diameter. While the interaction of Li+ is nearly independent of the tube diameter because of the electrostatic nature of the interaction.

  10. Electronic and optical properties of AlN under pressure: DFT calculations

    Science.gov (United States)

    Javaheri, Sahar; Boochani, Arash; Babaeipour, Manuchehr; Naderi, Sirvan

    2017-01-01

    Structural, elastic, optical, and electronic properties of wurtzite (WZ), zinc-blende (ZB), and rocksalt (RS) structures of AlN are investigated using the first-principles method and within the framework of density functional theory (DFT). Lattice parameters, bulk modulus, shear modulus, Young’s modulus, and elastic constants are calculated at zero pressure and compared with other experimental and theoretical results. The wurtzite and zinc-blende structures have a transition to rocksalt phase at the pressures of 12.7 GPa and 14 GPa, respectively. The electronic properties are calculated using both GGA and EV-GGA approximations; the obtained results by EV-GGA approximation are in much better agreement with the available experimental data. The RS phase has the largest bandgap with an amount of 4.98 eV; by increasing pressure, this amount is also increased. The optical properties like dielectric function, energy loss function, refractive index, and extinction coefficient are calculated under pressure using GGA approximation. Inter-band transitions are investigated using the peaks of imaginary part of the dielectric function and these transitions mainly occur from N-2p to Al-3p levels. The results show that the RS structure has more different properties than the WZ and ZB structures.

  11. Mechanical Properties of Additively Manufactured Thick Honeycombs

    Directory of Open Access Journals (Sweden)

    Reza Hedayati

    2016-07-01

    Full Text Available Honeycombs resemble the structure of a number of natural and biological materials such as cancellous bone, wood, and cork. Thick honeycomb could be also used for energy absorption applications. Moreover, studying the mechanical behavior of honeycombs under in-plane loading could help understanding the mechanical behavior of more complex 3D tessellated structures such as porous biomaterials. In this paper, we study the mechanical behavior of thick honeycombs made using additive manufacturing techniques that allow for fabrication of honeycombs with arbitrary and precisely controlled thickness. Thick honeycombs with different wall thicknesses were produced from polylactic acid (PLA using fused deposition modelling, i.e., an additive manufacturing technique. The samples were mechanically tested in-plane under compression to determine their mechanical properties. We also obtained exact analytical solutions for the stiffness matrix of thick hexagonal honeycombs using both Euler-Bernoulli and Timoshenko beam theories. The stiffness matrix was then used to derive analytical relationships that describe the elastic modulus, yield stress, and Poisson’s ratio of thick honeycombs. Finite element models were also built for computational analysis of the mechanical behavior of thick honeycombs under compression. The mechanical properties obtained using our analytical relationships were compared with experimental observations and computational results as well as with analytical solutions available in the literature. It was found that the analytical solutions presented here are in good agreement with experimental and computational results even for very thick honeycombs, whereas the analytical solutions available in the literature show a large deviation from experimental observation, computational results, and our analytical solutions.

  12. Microfluidic fabrication of plasmonic microcapsules

    OpenAIRE

    Wang, J.; Jin, M. L.; Eijkel, J.C.T.; Berg, van den, A.E.; Zhou, G.F.; Shui, L.L.

    2016-01-01

    This paper presents the plasmonic microcapsules with well-ordered nanoparticles embedded in polymer network fabricated by using a microfluidic device. The well-ordered nanoparticle arrays on the microcapsule form high-density uniform “hot-spots” with a deposited metal film, on which the localized surface plasmon resonance effect is obtained. These plasmonic microcapsules can be engineered and modified by nanoparticle size and the metal film thickness. Repeatable Surfaced-Enhanced Raman Scatte...

  13. Oriented Growth of PZT thick film embedded with PZT nanoparticles

    Institute of Scientific and Technical Information of China (English)

    DUAN Zhong-xia; YUAN Jie; ZHAO Quan-liang; LU Ran; CAO Mao-sheng

    2009-01-01

    This paper reports that dense and crack-free (100) oriented lead zirconate titanate (Pb(Zr0.52Ti0.48)O3,PZT) thick film embedded with PZT nanoparticles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive. The thick film possesses single-phase perovskite structure and perfectly (100) oriented. The (100) orientation degree of the PZT films strongly depended on annealing time and for the 4 μm-thick PZT film which was annealed at 700 ℃ for 5 min is the largest. The (100) orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing. The 3 μm-thick PZT thick film which was annealed at 700 ℃ for 5 min has the strongest (100) orientation degree, which is 82. 3%.

  14. Development of (Ti, Al)N coated cBN tool for ADI machining; ADI zai kakoyo (Ti, Al) N coated cBN kogu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Shintani, K.; Sugiyama, H.; Kato, H. [Kanazawa Institute of Technology, Ishikawa (Japan); Goto, M. [Sumitomo Electric Industries, Ltd., Osaka (Japan)

    1998-06-25

    Concerning cBN tools used for machining austempered ductile cast iron (ADI), the effects of difference in the strength of cBN particles themselves on tool life and the tool life extending effects of a (Ti, Al)N coating formed on the tool surface are discussed. In the experiment, three kinds of tool materials, which are C60-F, C60-M, and C60-T, are prepared, which contain 60vol% cBN particles different in strength. The flank abrasion inhibiting effect of the coating is also studied. In this study, C60c and C20c tools are tested, built of parent materials containing 20% 1{mu}m T particles and 60% 3{mu}m T particles and coated by (Ti, Al)N. Some of the conclusions reached are outlined below. The strength of cBN particles present in the specimens exerts virtually no influence on the improvement of flank abrasion characteristics. In a tool provided with a (Ti, Al)N coating, some of the (Ti, Al)N coating is retained between the cutting face near the cutting edge and the flank lower edge, and this suppresses the progress of flank abrasion. A tool provided with a (Ti, Al)N coating has a life which is more than three times the life of uncoated cBN tools. 9 refs., 12 figs., 2 tabs.

  15. Ocean Sediment Thickness Contours

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Ocean sediment thickness contours in 200 meter intervals for water depths ranging from 0 - 18,000 meters. These contours were derived from a global sediment...

  16. Origami of thick panels

    Science.gov (United States)

    Chen, Yan; Peng, Rui; You, Zhong

    2015-07-01

    Origami patterns, including the rigid origami patterns in which flat inflexible sheets are joined by creases, are primarily created for zero-thickness sheets. In order to apply them to fold structures such as roofs, solar panels, and space mirrors, for which thickness cannot be disregarded, various methods have been suggested. However, they generally involve adding materials to or offsetting panels away from the idealized sheet without altering the kinematic model used to simulate folding. We develop a comprehensive kinematic synthesis for rigid origami of thick panels that differs from the existing kinematic model but is capable of reproducing motions identical to that of zero-thickness origami. The approach, proven to be effective for typical origami, can be readily applied to fold real engineering structures.

  17. Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

    Energy Technology Data Exchange (ETDEWEB)

    Penner, J.

    2007-12-20

    After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

  18. Effects of External Electric Field on AlN Precipitation and Recrystallization Texture of Deep-drawing 08Al Killed Steel Sheet

    Institute of Scientific and Technical Information of China (English)

    Xiang ZHAO; Zhuochao HU; Liang ZUO

    2006-01-01

    The effects of an electric field on AlN precipitation and recrystallization texture were investigated. Cold-rolled 08Al killed steel sheets were annealed at 550℃ according to the two-step processes, for various maintaining times, with and without applying an electric field. It was found that the electric field promotes the precipitation of the second phase (AlN particles), strengthens the γ-fiber and weakens the α-fiber texture component in the recrystallized specimens. A possible explanation for the reinforcement of γ-fiber texture by the electric field is that the second phase AlN particle promotes the growth of γ-fiber at the expense of differently oriented grains.

  19. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

    Science.gov (United States)

    Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

    2016-12-01

    Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

  20. Influence of surface structure of (0001 sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer

    Directory of Open Access Journals (Sweden)

    Ryan G. Banal

    2015-09-01

    Full Text Available AlN epilayers were grown on (0001 sapphire substrates by metal-organic vapor phase epitaxy, and the influence of the substrate’s surface structure on the formation of in-plane rotation domain is studied. The surface structure is found to change with increasing temperature under H2 ambient. The ML steps of sapphire substrate formed during high-temperature (HT thermal cleaning is found to cause the formation of small-angle grain boundary (SAGB. To suppress the formation of such structure, the use of LT-AlN BL technique was demonstrated, thereby eliminating the SAGB. The BL growth temperature (Tg is also found to affect the surface morphology and structural quality of AlN epilayer. The optical emission property by cathodoluminescence (CL measurement showed higher emission intensity from AlN without SAGB. The LT-AlN BL is a promising technique for eliminating the SAGB.

  1. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

    Science.gov (United States)

    Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

    2016-03-01

    Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

  2. Fabrication and characterization of a GaN/(4H)SiC vertical pn power diode using direct and interfaced epitaxial-growth approaches

    Institute of Scientific and Technical Information of China (English)

    Bose Srikanta; Mazumder S K

    2013-01-01

    We report the fabrication and characterization of a vertical pn power diode which is realized using two separate epitaxial-growth mechanisms:(a) p-GaN over p-(4H)SiC,and (b) p-GaN over n-(4H)SiC with AlN as the interface layer.In all of the cases,n+-doped (4H)SiC serves as the cathode substrate.Pd(200(A))/Au(10000 (A)) is used for the anode contact while Ni(1000 (A)) is used for the bottom cathode contact.The measured forward drop of the pn diode with AlN as the interface material is found to be around 5.1 V; whereas,it is 3 V for the other sample structure.The measured reverse-blocking voltage is found to be greater than 200 V.

  3. Effect of bias voltage on microstructure and mechanical properties of arc evaporated (Ti, Al)N hard coatings

    Indian Academy of Sciences (India)

    F Aliaj; N Syla; S Avdiaj; T Dilo

    2013-06-01

    In the present study, authors report on the effect that substrate bias voltage has on the microstructure and mechanical properties of (Ti, Al)N hard coatings deposited with cathodic arc evaporation (CAE) technique. The coatings were deposited from a Ti0.5Al0.5 powder metallurgical target in a reactive nitrogen atmosphere at three different bias voltages: UB = −25, −50 and −100 V. The coatings were characterized in terms of compositional, microstructural and mechanical properties. Microstructure of the coatings was investigated with the aid of X-ray diffraction in glancing angle mode, which revealed information on phase composition, crystallite size, stress-free lattice parameter and residual stress. Mechanical properties were deduced from nano-indentation measurements. The residual stress in all the coatings was compressive and increased with increasing bias voltage in a manner similar to that reported in literature for Ti–Al–N coatings deposited with CAE. The bias voltage was also found to significantly influence the phase composition and crystallite size. At −25 V bias voltage the coating was found in single phase fcc-(Ti, Al)N and with relatively large crystallites of ∼9 nm. At higher bias voltages (−50 and −100 V), the coatings were found in dual phase fcc-(Ti, Al)N and fcc-AlN and the size of crystallites reduced to approximately 5 nm. The reduction of crystallite size and the increase of compressive residual stress with increasing bias voltage both contributed to an increase in hardness of the coatings.

  4. Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN

    Energy Technology Data Exchange (ETDEWEB)

    Goni, AR; Kaess, F; Reparaz, JS; Alonso, MI; Garriga, M; Callsen, G; Wagner, MR; Hoffmann, A; Sitar, Z

    2014-07-25

    We have measured both the ordinary and extraordinary refractive index of m-plane cuts of wurtzite ZnO, GaN, and AlN single crystals at room temperature and as a function of hydrostatic pressure up to 8 GPa. For that purpose we have developed an alternative optical interference method, called bisected-beam method, which leads, in general, to high contrast interference fringes. Its main feature, however, is to be particularly suitable for high pressure experiments with the diamond anvil cell, when the refractive index of the sample is low and similar to that of diamond and/or the pressure transmitting medium, as is the case here. For all three wide-gap materials we observe a monotonous decrease of the ordinary and extraordinary refractive indices with increasing pressure, being most pronounced for GaN, less marked for ZnO, and the smallest for AlN. The frequency dependence of the refractive indices was extrapolated to zero energy using a critical-point-plus-Lorentz-oscillator model of the ordinary and extraordinary dielectric function. In this way, we determined the variation with pressure of the electronic part (no-phonon contribution) of the static dielectric constant epsilon(infinity). Its volume derivative, r = d ln epsilon(infinity)/d ln V, serves as single scaling coefficient for comparison with experimental and/or theoretical results for other semiconductors, regarding the pressure effects on the dielectric properties. We have obtained an ordinary/extraordinary average value (r) over bar of 0.49(15) for ZnO, 1.22(9) for GaN, and 0.32(4) for AlN. With the values for the ordinary and extraordinary case being within experimental uncertainty, there is thus no apparent change in dielectric anisotropy under pressure for these wurtzite semiconductors. Results are discussed in terms of the pressure-dependent electronic band structure of the materials.

  5. Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Jonghoon [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)]. E-mail: jhoon6@hotmail.com; Ma, James [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Becker, Michael F. [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Keto, John W. [Department of Physics, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Kovar, Desiderio [Department of Mechanical Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2007-06-25

    Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10{sup -2} Pa (4.5 x 10{sup -4} Torr) of 99.9% purity.

  6. MEMS-based thick film PZT vibrational energy harvester

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Thyssen, Anders

    2011-01-01

    We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechan......We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

  7. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  8. Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The electrical properties of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures using high temperature (HT) AlN interlayers (ITs) grown on c-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD) have been investigated.It is found that the electrical properties (electron mobility and sheet carrier density) are improved compared with those in the conventional AlGaN/GaN heterostructures without HT AlN ITs,and the improved 2DEG properties result in the reduction of the sheet resistance.The results from high resolution X-ray diffraction (HRXRD) and Raman spectroscopy measurements show that HT AlN ITs increase the in-plane compressive strain in the upper GaN layer,which enhances the piezoelectric polarization in it and consequently causes increasing of 2DEG density at the AlGaN/GaN interface.Meanwhile,the compressive strain induced by HT AlN ITs leads to a less tensile strain in AlGaN barrier layer and causes positive and negative effects on the sheet carrier density of 2DEG,which counteract each other.The HT AlN ITs reduce the lattice mismatch between the GaN and AlGaN layers and smooth the interface between them,thus increasing the electric mobility of 2DEG by weakening the alloy-related interface roughness and scattering.In addition,the surface morphology of AlGaN/GaN heterostructures is improved by the insertion of HT AlN ITs.The reason for the improved properties is discussed in this paper.

  9. Improvement of electrical properties of AlGaN/GaN heterostructures using multiple high-temperature AlN interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Ni, J.Y. [School of Science, Xidian University, 710071 Xi' an (China); Hao, Y.; Xue, J.S.; Xu, Z.H.; Zhang, Z.F.; Zhang, J.C.; Yang, L.A.; Zhang, J.F. [Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, 710071 Xi' an (China)

    2010-07-15

    AlGaN/GaN heterostructures with multiple AlN interlayers deposited at a high-temperature (HT) of 900 C were grown by metalorganic chemical vapor deposition. Flat surface with few dark pits was obtained by using multiple HT-AlN interlayers. Hall effect measurements and non-contact sheet resistance mappings demonstrated the improvement of the electrical properties of AlGaN/GaN heterostructure. The sheet carrier density and Hall mobility continuously increased with the increase of the AlN interlayer number. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. An Ethology of Urban Fabric(s)

    DEFF Research Database (Denmark)

    Fritsch, Jonas; Thomsen, Bodil Marie Stavning

    2014-01-01

    The article explores a non-metaphorical understanding of urban fabric(s), shifting the attention from a bird’s eye perspective to the actual, textural manifestations of a variety of urban fabric(s) to be studied in their real, processual, ecological and ethological complexity within urban life. We...... effectuate this move by bringing into resonance a range of intersecting fields that all deal with urban fabric(s) in complementary ways (interaction design and urban design activism, fashion, cultural theory, philosophy, urban computing)....

  11. An Ethology of Urban Fabric(s)

    DEFF Research Database (Denmark)

    Fritsch, Jonas; Thomsen, Bodil Marie Stavning

    2014-01-01

    The article explores a non-metaphorical understanding of urban fabric(s), shifting the attention from a bird’s eye perspective to the actual, textural manifestations of a variety of urban fabric(s) to be studied in their real, processual, ecological and ethological complexity within urban life. We...... effectuate this move by bringing into resonance a range of intersecting fields that all deal with urban fabric(s) in complementary ways (interaction design and urban design activism, fashion, cultural theory, philosophy, urban computing)....

  12. Thermoplastic microcantilevers fabricated by nanoimprint lithography

    DEFF Research Database (Denmark)

    Greve, Anders; Keller, Stephan Urs; Vig, Asger Laurberg;

    2010-01-01

    Nanoimprint lithography has been exploited to fabricate micrometre-sized cantilevers in thermoplastic. This technique allows for very well defined microcantilevers and gives the possibility of embedding structures into the cantilever surface. The microcantilevers are fabricated in TOPAS and are up...... to 500 μm long, 100 μm wide, and 4.5 μm thick. Some of the cantilevers have built-in ripple surface structures with heights of 800 nm and pitches of 4 μm. The yield for the cantilever fabrication is 95% and the initial out-of-plane bending is below 10 μm. The stiffness of the cantilevers is measured...

  13. Heat Generation by Polypyrrole Coated Glass Fabric

    Directory of Open Access Journals (Sweden)

    A. M. Rehan Abbasi

    2013-01-01

    Full Text Available Vapor deposition technique was employed to coat polypyrrole (PPy on glass substrate using FeCl3 as oxidant and p-toluenesulfonic acid (−OTs as doping agent. The Joule heating effect of PPy coated E-glass fabric was studied by supplying various DC electric fields. The coated fabric exhibited reasonable electrical stability, possessed medium electrical conductivity and was effective in heat generation. An increase in temperature of conductive fabric subjected to constant voltage was observed whereas decrease in power consumption was recorded. Thickness of PPy coating on glass fibers was analyzed by Laser confocal microscope and scanning electron microscope.

  14. Influence of the crystal orientation on the electrical properties of AlN thin films on LTCC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bittner, A., E-mail: achim.bittner@tuwien.ac.at [Micromechanics, Microfluidics/Microactuators, Faculty of Natural Sciences and Technology II, Saarland University, D-66123 Saarbruecken (Germany); Ababneh, A.; Seidel, H. [Micromechanics, Microfluidics/Microactuators, Faculty of Natural Sciences and Technology II, Saarland University, D-66123 Saarbruecken (Germany); Schmid, U. [Department for Microsystems Technology, Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria)

    2010-11-15

    In this study, the influence of the crystal orientation on the electrical properties of sputter deposited aluminium nitride (AlN) thin films on low temperature co-fired ceramics (LTCC) substrates is investigated. The degree of c-axis orientation can be tailored by the deposition conditions such as plasma power, gas pressure and gas composition in the deposition chamber. Due to the large surface roughness of LTCC substrates (R{sub a} = {approx}0.4 {mu}m) the quality of thin films is lower compared to silicon. Between areas of columnar grains arranged perpendicular to the LTCC surface, defects like voids are generated due to the wavy surface characteristics. The impact of crystal orientation and temperature up to 400 deg. C on the electrical performance is evaluated, as these layers are targeted as potential candidates for dielectric heat spreaders on multilayered ceramic substrates for high frequency applications. These AlN thin films having a good c-axis orientation exhibit lower leakage current levels over the complete temperature range compared to those with a poor alignment with respect to this crystallographic plane. The leakage current behaviour, however, is dominated according to the Pool-Frenkel electron emission independent of the degree of c-axis orientation.

  15. Calculation of phase diagrams of the Li{sub 3}N-Al system for AlN growth

    Energy Technology Data Exchange (ETDEWEB)

    Yayama, Tomoe [Department of Aeronautics and Astronautics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Kangawa, Yoshihiro [Department of Aeronautics and Astronautics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan); Kakimoto, Koichi [Department of Aeronautics and Astronautics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2011-05-15

    To investigate the possibility of AlN synthesis from Li{sub 3}N and Al as source materials, a phase diagram of the Li{sub 3}N-Al system was constructed by using calculation of the phase diagram (CALPHAD) method. Thermodynamic data of a ternary system was prepared on the basis of data of binary systems, which are Al-Li, Al-N and Li-N. In the present work, we newly incorporated thermodynamic data of Li{sub 3}AlN{sub 2} into the system. Gibbs energy function of Li{sub 3}AlN{sub 2} is described by a stoichiometric compound model and the parameter was determined to reproduce our experimental results. The calculated phase diagram was verified by differential thermal analysis (DTA). The calculated solution temperature of Li{sub 3}AlN{sub 2} agreed with the DTA results and the validity was confirmed. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Van Bui, H., E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl; Wiggers, F. B.; Kovalgin, A. Y.; Jong, M. P. de, E-mail: H.VanBui@utwente.nl, E-mail: M.P.deJong@utwente.nl [MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands); Friedlein, R.; Yamada-Takamura, Y. [School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292 (Japan)

    2015-02-14

    Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB{sub 2}(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH{sub 3}) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH{sub 3} molecules, at temperatures of 300 °C and 400 °C, respectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.

  17. Impact of anharmonic effects on the phase stability, thermal transport, and electronic properties of AlN

    Science.gov (United States)

    Shulumba, Nina; Raza, Zamaan; Hellman, Olle; Janzén, Erik; Abrikosov, Igor A.; Odén, Magnus

    2016-09-01

    Wurtzite aluminium nitride (AlN) is a technologically important wide-band-gap semiconductor with an unusually high thermal conductivity, used in optical applications and as a heatsink substrate. Explaining many of its properties depends on an accurate description of its lattice dynamics, which have thus far only been captured in the quasiharmonic approximation. In this work, we show that anharmonic effects have a considerable impact on its phase stability and transport properties, since they are much stronger in the rocksalt phase. We construct a theoretical pressure-temperature phase diagram of AlN, demonstrating that the rocksalt phase is stabilized by increasing temperature, with respect to the wurtzite phase. We recover the thermal conductivity of the wurtzite phase (320 Wm-1K-1 under ambient conditions) and compute the hitherto unknown thermal conductivity of the rocksalt phase (81 Wm-1K-1 ). We also show that the electronic band gap decreases with temperature. These findings provide further evidence that anharmonic effects cannot be ignored in simulations of materials intended for high-temperature applications.

  18. The Variations of Thermal Contact Resistance and Heat Transfer Rate of the AlN Film Compositing with PCM

    Directory of Open Access Journals (Sweden)

    Huann-Ming Chou

    2015-01-01

    Full Text Available The electrical industries have been fast developing over the past decades. Moreover, the trend of microelements and packed division multiplex is obviously for the electrical industry. Hence, the high heat dissipative and the electrical insulating device have been popular and necessary. The thermal conduct coefficient of aluminum nitride (i.e., AlN is many times larger than the other materials. Moreover, the green technology of composite with phase change materials (i.e., PCMs is worked as a constant temperature cooler. Therefore, PCMs have been used frequently for saving energy and the green environment. Based on the above statements, it does show great potential in heat dissipative for the AlN film compositing with PCM. Therefore, this paper is focused on the research of thermal contact resistance and heat transfer between the AlN/PCM pairs. According to the experimental results, the heat transfer decreases and the thermal contact resistance increases under the melting process of PCM. However, the suitable parameters such as contact pressures can be used to improve the above defects.

  19. Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

    Science.gov (United States)

    Bernard, F.; Casset, F.; Danel, J. S.; Chappaz, C.; Basrour, S.

    2016-08-01

    This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm2. Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system.

  20. Optical Study of Filled Tetrahedral Compounds Li3AlN2 and Li3GaN2

    Science.gov (United States)

    Dadsetani, M.; Namjoo, S.; Nejati, H.

    2010-08-01

    A detailed analysis of the optical properties of filled tetrahedral semiconductors Li3AlN2 and Li3GaN2 has been performed, using the full potential linearized augmented plane wave method within the density functional theory. The real and imaginary parts of the dielectric function ɛ( ω), the optical absorption coefficient I( ω), the reflectivity R( ω), and the electron energy loss function are calculated within the random phase approximation. The interband transitions responsible for the structures in the spectra are specified. Looking at optical matrix element, we note that the major peaks are dominated by transition from metal s, N 2 p states to N 2 p, Ga 3 d states. The theoretical calculated optical properties and electron energy loss spectrum yield a static dielectric constant of 5.34 and a plasmon energy of 19.47 eV for Li3GaN2. In the Li3AlN2 compound, the static dielectric constant decreases to 4.75 and yields a plasmon energy of 18.5 eV. The effect of spin-orbit coupling on the optical properties is also investigated and found to be quite small, especially in the low-energy region. In order to check the reliability of our calculations, analogous results obtained for Be3N2 in the same structure [space group Ia3(206)] are included in this work.

  1. ITER Central Solenoid Module Fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Smith, John [General Atomics, San Diego, CA (United States)

    2016-09-23

    The fabrication of the modules for the ITER Central Solenoid (CS) has started in a dedicated production facility located in Poway, California, USA. The necessary tools have been designed, built, installed, and tested in the facility to enable the start of production. The current schedule has first module fabrication completed in 2017, followed by testing and subsequent shipment to ITER. The Central Solenoid is a key component of the ITER tokamak providing the inductive voltage to initiate and sustain the plasma current and to position and shape the plasma. The design of the CS has been a collaborative effort between the US ITER Project Office (US ITER), the international ITER Organization (IO) and General Atomics (GA). GA’s responsibility includes: completing the fabrication design, developing and qualifying the fabrication processes and tools, and then completing the fabrication of the seven 110 tonne CS modules. The modules will be shipped separately to the ITER site, and then stacked and aligned in the Assembly Hall prior to insertion in the core of the ITER tokamak. A dedicated facility in Poway, California, USA has been established by GA to complete the fabrication of the seven modules. Infrastructure improvements included thick reinforced concrete floors, a diesel generator for backup power, along with, cranes for moving the tooling within the facility. The fabrication process for a single module requires approximately 22 months followed by five months of testing, which includes preliminary electrical testing followed by high current (48.5 kA) tests at 4.7K. The production of the seven modules is completed in a parallel fashion through ten process stations. The process stations have been designed and built with most stations having completed testing and qualification for carrying out the required fabrication processes. The final qualification step for each process station is achieved by the successful production of a prototype coil. Fabrication of the first

  2. Epitaxial AlN layers on sapphire and diamond; Epitaktische AlN-Schichten auf Saphir und Diamant

    Energy Technology Data Exchange (ETDEWEB)

    Hermann, Martin

    2009-04-27

    In this work, epitaxial AlN layers deposited by molecular beam epitaxy on sapphire and diamond substrates were investigated. Starting from this AlN, the dopant silicon was added. The influence of the silicon doping on the structural properties of the host AlN crystal was investigated using high resolution X-ray diffraction. Once the silicon concentration exceeds 1 x 10{sup 19} cm{sup -3}, a significant change of the AlN:Si crystal can be observed: increasing the silicon concentration up to 5 x 10{sup 20} cm{sup -3} results in a decrease of the a lattice parameter by approximately 1.2 pm and an increase of the c lattice parameter by about 1.0 pm. The crystal is stressed additionally by adding silicon resulting in a increase of the biaxial compressive stress of up to 2.0 GPa. Further increase of the silicon concentration leads to lattice relaxation. This result from X-ray diffraction was independently confirmed by Raman spectroscopy investigations. Further increase of the silicon concentration leads to the generation of polycrystalline phases within the epitaxial layer. XTEM measurements detected these polycrystalline phases. In addition, XTEM investigations confirmed also the increase of the lateral crystal size with increasing silicon concentration, as well as a great reduction of the screw dislocation density by more than one order of magnitude as found by X-ray diffraction: in undoped, nitrogen rich grown AlN layers the screw dislocation density is about 3 x 10{sup 8} cm{sup -2}, while AlN layers with a silicon concentration of 5 x 10{sup 20} cm{sup -3} show a screw dislocation density of only 1 x 10{sup 7} cm{sup -2}. In low-doped AlN:Si ([Si]{approx}2 x 10{sup 19} cm{sup -3}) the activation energy of the electronic conductivity is about 250 meV. Increasing the silicon concentration to about 1 x 10{sup 21} cm{sup -3} leads to an increase of the activation energy up to more than 500 meV in the now much more stressed AlN:Si epilayer. Studies of the absorption

  3. Deposición de películas de AlN como dispositivos semiconductores

    Directory of Open Access Journals (Sweden)

    Julio Cesar Caicedo

    2012-10-01

    Full Text Available Películas de AlN fueron depositados por la técnica de deposición por láser pulsado (PLD, utilizando un láser Nd: YAG con una longitud de onda de 1064 nm. Las películas fueron depositadas en una atmósfera de nitrógeno como gas de trabajo; como cátodo se usó aluminio de alta pureza (99,99%. Las películas fueron depositadas con una fluencia del láser de 2,28 J/cm2 durante 10 minutos sobre sustratos de silicio (100. La presión de trabajo fue de 9 x 10-3 mbar y la temperatura del sustrato se varió desde 200 °C a 630 °C. El espesor medido por perfilometría fue de 150 nm para todas las películas. Además se fabricaron los dispositivos de ondas acústicas de superficie (SAW con una configuración Mo/AlN/Si, empleando AlN-bufer y un canal de Mo. La morfología y la composición de las películas se estudiaron mediante microscopía electrónica de barrido (MEB y energía dispersiva de rayos X de análisis (EDX, respectivamente. Los espectros de reflectancia óptica y color de coordenadas de las películas se obtuvieron por la técnica óptica reflectometría espectral en el rango de 400-900 cm-1 por medio de un espectrofotómetro Ocean Optics 2000. En este trabajo se encontró una clara dependencia de las propiedades morfológicas, reflectancia, pureza dominante, longitud de onda del color, la respuesta de frecuencia y velocidad de la onda acústica en términos de la temperatura aplicada al sustrato. Se observó una reducción en la reflectancia de aproximadamente 30% y aumento de velocidad de la onda acústica de aproximadamente 1,3% cuando la temperatura se incrementó desde 200 °C a 630 °C.

  4. Robust Half-Metallicity in a Chromium-Substituted AlN

    Institute of Scientific and Technical Information of China (English)

    S. Arif; Iftikhar Ahmad; B. Amin; H. A. Rahnamaye Aliabad

    2011-01-01

    We investigate half metallicity in a chromium (Cr)-substituted A1N dilute magnetic semiconductor using the full-potential linearized augmented plane-wave method. Our results show that Al0.75Cr0.25N is half metal and holds a net integer magnetic moment of 3μβ with lattice compression. The half-metallic nature is maintained from the relaxed lattice constant 4.36 A to 4.09 A. An abrupt change of the physical properties is observed at a robust transition lattice constant of 4.09 A, and the material transforms from half metal to metal. We find that up to 6% compression, the material maintains its half-metallic nature. Furthermore, we also confirm that the origin of ferromagnetism in Al0.75Cr0.25 N is double exchange.%We investigate half metallicity in a chromium (Cr)-substituted AlN dilute magnetic semiconductor using the full-potential linearized augmented plane-wave method.Our results show that Al0.75Cr0.25N is half metal and holds a net integer magnetic moment of 3μβ with lattice compression.The half-metallic nature is maintained from the relaxed lattice constant 4.36(A) to 4.09(A).An abrupt change of the physical properties is observed at a robust transition lattice constant of 4.09 (A),and the material transforms from half metal to metal.We find that up to 6% compression,the material maintains its half-metallic nature.Furthermore,we also confirm that the origin of ferromagnetism in Al0.75Cr0.25N is double exchange.Spintronics,a newly emerging field of science,is expected to bring revolutionary change in the fields of information technology and telecommunication.One of the possible applications of spintronic devices is in Giga bits memory devices,such as GMR and TMR,whose functions depend on the direction of magnetization and can only be realized using spin degrees of freedom.[1

  5. Magnetotelluric investigation of the Alnö alkaline and carbonatite ring complex, central Sweden

    Science.gov (United States)

    Yan, Ping; Andersson, Magnus; Garcia Juanatey, Maria A.; Shan, Chunling; Malehmir, Alireza; Pedersen, Laust B.

    2014-05-01

    Alnö complex, 553-590 Ma, located in central Sweden, is one of the largest of few known alkaline and carbonatite ring intrusions in the world. The complex primarily consists of alkaline silicate rocks (ijolite, nepheline-syenite and pyroxenite) and a wide range of carbonatite dykes with different compositions (e.g., sövite). To better understand the intrusion mechanism(s) and the deeper structure of the intrusion, three high-resolution reflection seismic, gravity and magnetic profiles, crossing the main intrusion, were acquired in winter 2010. Together with these, petrophysical measurements on various rock samples have also been carried out. These data not only successfully showed the lateral extension of the intrusion at depth but also suggested a solidified saucer-shaped magma chamber at about 3 km depth that is associated with caldera-related ring-type fault systems. To further elucidate these interpretations, magnetotelluric (MT) data were acquired in summer 2013. The MT data were measured at 34 stations across the intrusion and designed so that a 3D conductivity model can be obtained. Most of the sites are located along the seismic profiles, while the rest is distributed over the intrusion area, to provide lateral and off-profile information. The time series were recorded with four broadband MT instruments simultaneously. The used sampling rates were 1000 Hz (two hours after midnight) and 20 Hz (a full day). The collected MT data are highly influenced by noise from cultural sources. Luckily, higher frequencies are less influenced providing a good coverage of the interest depth of about 5 km. Therefore, the data processing and analysis focused solely on the high frequency data. To decrease the effect of noise, the best quality site in one day was chosen for remote referencing the other three. Even if the sites were only 500 to 1000 m apart, better results were obtained, indicating very localized noise sources in the area. The strike analysis of the obtained

  6. Laser sintering of thick-film conductors for microelectronic applications

    Science.gov (United States)

    Kinzel, Edward C.; Sigmarsson, Hjalti H.; Xu, Xianfan; Chappell, William J.

    2007-03-01

    This paper investigates fabrication of functional thick metal films using simultaneous laser sintering and patterning along with the fundamental physical phenomena that govern the laser sintering process. The effects of the processing parameters on the quality of the fabricated components are investigated through a heat transfer analysis. We show that our process has potentials for metallization of microelectronics directly onto substrates whose melting temperatures are much lower than the temperature needed for sintering, which is only possible by properly controlling the temperature field during laser sintering. Optimum properties of the fabricated components are obtained when certain thermal conditions are produced during laser heating.

  7. Determining the applicability of liquid alloy nitriding in fabrication of Al-AlN particle composites

    Directory of Open Access Journals (Sweden)

    J. Śleziona

    2008-08-01

    Full Text Available One of the possible techniques of the fabrication of dispersion-hardened composites is by in situ reaction between the liquid alloy and gas. The study presents the results of the research on nitriding of liquid aluminium alloy containing Mg and Ti as alloying elements under the conditions of high pressure comprised in the range of 150-1000hPa at the temperature of up to 1100oC. It has been stated that under the applied conditions of the synthesis it is possible to obtain the AlN nitride, but it is formed on the liquid alloy surface and as a deposit on the surface of the crucible. Some results of the analysis of the phase constitution obtained in the fabricated products were presented along with the structure of these products.

  8. Fabrication and Prototyping Lab

    Data.gov (United States)

    Federal Laboratory Consortium — Purpose: The Fabrication and Prototyping Lab for composite structures provides a wide variety of fabrication capabilities critical to enabling hands-on research and...

  9. Passivation of In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces by AlN atomic layer deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Weiland, C.; Woick, J. C. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Rumaiz, A. K. [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States); Price, J.; Lysaght, P. [SEMATECH, 257 Fuller Road, Albany, New York 12203 (United States)

    2013-07-21

    Reducing defects at III-V/high-k interfaces is essential for optimizing devices built on these materials. Here, the role of an interfacial AlN process at In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces is investigated by hard x-ray photoelectron spectroscopy (HAXPES) and capacitance/voltage (C-V) measurements. C-V measurements show a significant reduction in the density of interface traps with the interfacial AlN process and a capping TiN layer. To elucidate the specific role of the AlN process, blanket films with various deposition processes are compared. The AlN process alone (without subsequent dielectric deposition) reduces InGaAs oxide levels below the HAXPES detection limit, even though the AlN is ultimately found to be oxidized into AlO{sub x} with only trace N incorporation, yet AlN passivation provides a lower D{sub it} (density of interface traps) when compared with an H{sub 2}O-based Al{sub 2}O{sub 3} deposition. The AlN process does not passivate against re-oxidation of the InGaAs during an O{sub 3} based ZrO{sub 2} deposition process, but it does provide passivation against As-As development during subsequent TiN deposition. The role of chemical defects in the C-V characteristics is also discussed.

  10. A first-principles study of the SCN{sup -} chemisorption on the surface of AlN, AlP, and BP nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Soltani, Alireza, E-mail: Alireza.soltani46@yahoo.com [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Taghartapeh, Mohammad Ramezani [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Mighani, Hossein [Department of Chemistry, Faculty of science, Golestan University, Gorgan (Iran, Islamic Republic of); Pahlevani, Amin Allah [Young Researchers Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Mashkoor, Reza [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of)

    2012-10-15

    Graphical abstract: Adsorption properties of SCN{sup -} on AlN, AlP, and BP nanotubes based on density functional theory. Black-Right-Pointing-Triangle We demonstrate the most stable configurations (N-side) of SCN{sup -} on AlN, AlP, and BP nanotubes models. Highlights: Black-Right-Pointing-Pointer The SCN{sup -} Adsorption on surface of AlN, AlP, and BP nanotubes were studied via density functional theory (DFT). Black-Right-Pointing-Pointer The interaction of SCN{sup -} on the electronic properties and the NBO charge distribution of mentioned configurations are investigated. Black-Right-Pointing-Pointer The studies suggest that the adsorption energies of SCN{sup -} on AlPNT is most notable in comparison with AlNNT and BPNT. - Abstract: We have performed first-principles calculations to explore the adsorption behavior of the SCN{sup -} on electronic properties of AlN, AlP, and BP nanotubes. The adsorption value of SCN{sup -} for the most stable formation on the AlPNT is about -318.16 kJ mol{sup -1}, which is reason via the chemisorptions of SCN anion. The computed density of states (DOS) indicates that a notable orbital hybridization take place between SCN{sup -} and AlP nanotube in adsorption process. Finally, the AlP nanotube can be used to design as useful sensor for nanodevice applications.

  11. Development of AlN and TiB2 Composites with Nb2O5, Y2O3 and ZrO2 as Sintering Aids

    Science.gov (United States)

    González, José C.; Rodríguez, Miguel Á.; Figueroa, Ignacio A.; Villafuerte-Castrejón, María-Elena; Díaz, Gerardo C.

    2017-01-01

    The synthesis of AlN and TiB2 by spark plasma sintering (SPS) and the effect of Nb2O5, Y2O3 and ZrO2 additions on the mechanical properties and densification of the produced composites is reported and discussed. After the SPS process, dense AlN and TiB2 composites with Nb2O5, Y2O3 and ZrO2 were successfully prepared. X-ray diffraction analysis showed that in the AlN composites, the addition of Nb2O5 gives rise to Nb4N3 during sintering. The compound Y3Al5O12 (YAG) was observed as precipitate in the sample with Y2O3. X-ray diffraction analysis of the TiB2 composites showed TiB2 as a single phase in these materials. The maximum Vickers and toughness values were 14.19 ± 1.43 GPa and 27.52 ± 1.75 GPa for the AlN and TiB2 composites, respectively. PMID:28772681

  12. AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

    Science.gov (United States)

    Jeon, Hunsoo; Jeon, Injun; Lee, Gang Seok; Bae, Sung Geun; Ahn, Hyung Soo; Yang, Min; Yi, Sam Nyung; Yu, Young Moon; Honda, Yoshio; Sawaki, Nobuhiko; Kim, Suck-Whan

    2017-01-01

    High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 °C, respectively. The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. When the temperature in the source zone was 800 °C, the crystalline quality of the AlN and AlGaN epilayers increased as the ratio of Ga to Al increased, and the optimum mix ratio of Ga to Al for the growth of AlN epilayers was approximately 0.35-0.42, obtained from a numerical fitting analysis of the X-ray diffraction (XRD) data for these epilayers. It appears that they can be grown directly by our melted-mixed-source HVPE method in a high-temperature source zone.

  13. Fabrication of biopolymer cantilevers using nanoimprint lithography

    DEFF Research Database (Denmark)

    Keller, Stephan Sylvest; Feidenhans'l, Nikolaj Agentoft; Fisker-Bødker, Nis

    2011-01-01

    The biodegradable polymer poly(l-lactide) (PLLA) was introduced for the fabrication of micromechanical devices. For this purpose, thin biopolymer films with thickness around 10 μm were spin-coated on silicon substrates. Patterning of microcantilevers is achieved by nanoimprint lithography. A major...

  14. Fabrication of recyclable superhydrophobic cotton fabrics

    Science.gov (United States)

    Han, Sang Wook; Park, Eun Ji; Jeong, Myung-Geun; Kim, Il Hee; Seo, Hyun Ook; Kim, Ju Hwan; Kim, Kwang-Dae; Kim, Young Dok

    2017-04-01

    Commercial cotton fabric was coated with SiO2 nanoparticles wrapped with a polydimethylsiloxane (PDMS) layer, and the resulting material surface showed a water contact angle greater than 160°. The superhydrophobic fabric showed resistance to water-soluble contaminants and maintained its original superhydrophobic properties with almost no alteration even after many times of absorption-washing cycles of oil. Moreover, superhydrophobic fabric can be used as a filter to separate oil from water. We demonstrated a simple method of fabrication of superhydrophobic fabric with potential interest for use in a variety of applications.

  15. A MEMS AlN transducer array with flexible interconnections for use as a cochlear implant

    Science.gov (United States)

    Knisely, Katherine; Zhao, Chuming; Grosh, Karl

    2015-12-01

    A completely implantable artificial organ of Corti (CIAO) was fabricated using batch MEMS processing techniques. A silicon backbone supports five piezoelectric cantilevers, each of which is designed to have an in vivo resonance corresponding to its tonotopic location in the guinea pig ST (20-40 kHz). An attachable polymer ribbon cable extends 4cm from the probe to an electrode bay, where electrical connections to each cantilever are accessed. The actuation responses of the fabricated devices were measured using laser vibrometry confirming the fluid-loaded resonance conforming to the straight section of the first turn of the guinea pig cochlea. First generation devices have been fabricated and the actuated resonances were measured to range from 80.3-134.2kHz in air and 24.3-41.0 kHz in water.

  16. Properties of conductive thick-film inks

    Science.gov (United States)

    Holtze, R. F.

    1972-01-01

    Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

  17. Investigation of Basalt Woven Fabrics for Military Applications

    Science.gov (United States)

    2011-11-01

    3 Figure 3. Typical VARTM process...Small Business Innovation Research (SBIR) contracts. Typical vacuum-assisted resin transfer molding ( VARTM ) involves layering up plies of unimpregnated...resin across the fabric. Figure 3. Typical VARTM process. Plates for mechanical testing were fabricated to be 25 × 25 in with a 0.2-in thickness

  18. MEMS Accelerometer with Screen Printed Piezoelectric Thick Film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lau-Moeller, R.; Bove, T.

    2006-01-01

    A bulk-micromachined piezoelectric MEMS accelerometer with screen printed piezoelectric Pb(ZrxTil )O3(PZT) thick film (TF) as the sensing material has been fabricated and characterized. The accelerometer has a four beam structure with a central seismic mass (3600x3600x500 pm3) and a total chip size...

  19. Triaxial MEMS accelerometer with screen printed PZT thick film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Almind, Ninia Sejersen; Brodersen, Simon Hedegaard

    2010-01-01

    . In this work integration of a screen printed piezoelectric PZT thick film with silicon MEMS technology is shown. A high bandwidth triaxial accelerometer has been designed, fabricated and characterized. The voltage sensitivity is 0.31 mV/g in the vertical direction, 0.062 mV/g in the horizontal direction...

  20. Fabrication of Metallic Hollow Nanoparticles

    Science.gov (United States)

    Kim, Jae-Woo (Inventor); Choi, Sr., Sang H. (Inventor); Lillehei, Peter T. (Inventor); Chu, Sang-Hyon (Inventor); Park, Yeonjoon (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

    2016-01-01

    Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH.sub.4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.

  1. Rapid, Non-Contact Method for Measurement of Si-Wafer Thickness: Principles and Preliminary Results; Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Sopori, B.; Auriemma, C.; Li, C.; Madjdpour, J.

    2003-08-01

    The thickness of a semiconductor wafer can critically influence mechanical and/or electronic yield of the device(s) fabricated on it. For most microelectronic (surface) devices, the thickness of a wafer is important primarily for mechanical reasons--to provide control and stability of devices by minimizing stresses resulting from various device-fabrication processes. However, for minority-carrier devices, such as solar cells, the entire thickness of the wafer participates in the optical and electronic performance of the device. In either case, control of wafer thickness through careful measurement is a fundamental requirement in the commercial fabrication of electronic devices.

  2. Polymorphous computing fabric

    Science.gov (United States)

    Wolinski, Christophe Czeslaw; Gokhale, Maya B.; McCabe, Kevin Peter

    2011-01-18

    Fabric-based computing systems and methods are disclosed. A fabric-based computing system can include a polymorphous computing fabric that can be customized on a per application basis and a host processor in communication with said polymorphous computing fabric. The polymorphous computing fabric includes a cellular architecture that can be highly parameterized to enable a customized synthesis of fabric instances for a variety of enhanced application performances thereof. A global memory concept can also be included that provides the host processor random access to all variables and instructions associated with the polymorphous computing fabric.

  3. The Influence of Yttrium Isopropoxide on the Mechanical Properties of SiCW-reinforced AlN Ceramics

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    By using self-made metal-alkoxide yttrium isopropoxide as a sintering additive and disperser of whisker,the SiC whisker reinforced AlN ceramics was prepared.Its apparent density is 99.5 percent of the theoretical density;its flexural strength and fracture toughness are 681 MPa and 5.21 MPa*m1/2 respectively.Comparing the result with that by applying Y2O3 powder as a sintering additive,the flexural strength is increased by 25% and the fracture toughness is increased by 33%.The dispersity of whisker by increased yttrium isopropoxide is significantly better than that by Triton X-100.

  4. Transition from bound to free excitons observed in deep- ultraviolet photoluminescence of AlN grown by MOCVD

    Science.gov (United States)

    Wang, Weiying; Jin, Peng; Tang, Ning; Liu, Yali; Fu, Lei; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo

    2016-07-01

    The transition from bound exciton to free exciton and exciton-phonon interaction in an AlN epilayer have been investigated by time resolved deep ultraviolet photoluminescence spectroscopy. Based on the analysis of the energy position (S-shaped dependence with temperature), integrated intensity as well as decay time, the main X peak located at 6.06 eV at 7.7 K is assigned to originate from radiative recombination of excitons bound to some unintentionally doped Si or O impurities. While the other two peaks on the lower energy side should be from the bound exciton’s phonon replicas. The corresponding small Huang-Rhys factor indicates weak interaction between phonon and bound excitons, in comparison to the case of free exciton, for which our experimental results are in good agreement with the theoretical calculation of the Huang-Rhys factors.

  5. How thick is the lithosphere?

    Science.gov (United States)

    Kanamori, H; Press, F

    1970-04-25

    A rapid decrease in shear velocity in the suboceanic mantle is used to infer the thickness of the lithosphere. It is proposed that new and highly precise group velocity data constrain the solutions and imply a thickness near 70 km.

  6. Preparation and Photocatalytic Activity of TiO-Deposited Fabrics

    Directory of Open Access Journals (Sweden)

    Yang Xu

    2012-01-01

    Full Text Available Nanoscale titanium dioxide (TiO2 photocatalytic films were deposited on the surface of polyester nonwovens by using direct current reactive magnetron sputtering. The effects of coating thickness on the surface structures and properties of TiO2-coated fabrics were investigated by X-ray photoelectron spectroscopy (XPS, atomic force microscope (AFM, and scanning electron microscope (SEM. The photocatalytic activity of the functional nonwoven fabrics was evaluated by the degradation of methylene blue. The test results proved that the grain sizes of the sputtered clusters increased and the coating layer became more compact with the increase of film thickness, but the composition of the sputtered films did not have any significant change. At the same time, the photocatalytic activity of TiO2-coated fabrics mostly depended on the film thickness which could lead to the optimum thickness for a particular application.

  7. Estudo da viabilidade de obtenção de cerâmicas de SiC por infiltração espontânea de misturas eutéticas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN Study of the viability to produce SiC ceramics by Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN spontaneous infiltration

    Directory of Open Access Journals (Sweden)

    G. C. R. Garcia

    2008-06-01

    Full Text Available As cerâmicas de carbeto de silício, SiC, apresentam excelentes propriedades quando obtidas por infiltração de determinados líquidos. Na infiltração o tempo de contato entre o líquido e o SiC a temperaturas elevadas é muito curto, diminuindo a probabilidade de formação dos produtos gasosos que interferem negativamente na resistência da peça final, como ocorre na sinterização via fase líquida. O objetivo deste trabalho é mostrar uma correlação entre molhabilidade e capacidade de infiltração de alguns aditivos em compactos de SiC. Foram preparados compactos de SiC por prensagem isostática a frio e posterior pré-sinterização via fase sólida. Nesses compactos foram infiltradas misturas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN, nas composições eutéticas, 10 ºC acima da temperatura de fusão das respectivas misturas por 4, 8 e 12 min. Após infiltração, as amostras foram analisadas quanto à densidade aparente e real, fases cristalinas, microestrutura e grau de infiltração, sendo que as amostras infiltradas com Y2O3-AlN apresentaram melhores resultados.Silicon carbide ceramics, SiC, obtained by liquid infiltration have shown excellent properties. In infiltration process the contact time of the liquid with SiC at elevated temperature is short, decreasing the probability to form gaseous products that contribute negatively in the final product properties. This phenomenon occurs during SiC liquid phase sintering. The purpose of the present study was to investigate the correlation between wettability and infiltration tendency of some additives in SiC compacts. SiC compacts were prepared by cold isostatic pressing followed by solid phase pre-sintering. Into the compacts were introduced Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN liquids with eutectic compositions at a temperature 10 ºC higher than the melting point of each mixture for 4, 8 and 12 min. Before infiltration, the samples were analyzed by determining densities, crystalline phases

  8. Thick-Big Descriptions

    DEFF Research Database (Denmark)

    Lai, Signe Sophus

    The paper discusses the rewards and challenges of employing commercial audience measurements data – gathered by media industries for profitmaking purposes – in ethnographic research on the Internet in everyday life. It questions claims to the objectivity of big data (Anderson 2008), the assumption...... communication systems, language and behavior appear as texts, outputs, and discourses (data to be ‘found’) – big data then documents things that in earlier research required interviews and observations (data to be ‘made’) (Jensen 2014). However, web-measurement enterprises build audiences according...... to a commercial logic (boyd & Crawford 2011) and is as such directed by motives that call for specific types of sellable user data and specific segmentation strategies. In combining big data and ‘thick descriptions’ (Geertz 1973) scholars need to question how ethnographic fieldwork might map the ‘data not seen...

  9. FABRIC QUALITY CONTROL SYSTEMS

    Directory of Open Access Journals (Sweden)

    Özlem KISAOĞLU

    2006-02-01

    Full Text Available Woven fabric quality depends on yarn properties at first, then weaving preparation and weaving processes. Defect control of grey and finished fabric is done manually on the lighted tables or automatically. Fabrics can be controlled by the help of the image analysis method. In image system the image of fabrics can be digitized by video camera and after storing controlled by the various processing. Recently neural networks, fuzzy logic, best wavelet packet model on automatic fabric inspection are developed. In this study the advantages and disadvantages of manual and automatic, on-line fabric inspection systems are given comparatively.

  10. Disentangling The Thick Concept Argument

    DEFF Research Database (Denmark)

    Blomberg, Olle

    2007-01-01

    Critics argue that non-cognitivism cannot adequately account for the existence and nature of some thick moral concepts. They use the existence of thick concepts as a lever in an argument against non-cognitivism, here called the Thick Concept Argument (TCA). While TCA is frequently invoked...

  11. Disentangling The Thick Concept Argument

    DEFF Research Database (Denmark)

    Blomberg, Olle

    2007-01-01

    Critics argue that non-cognitivism cannot adequately account for the existence and nature of some thick moral concepts. They use the existence of thick concepts as a lever in an argument against non-cognitivism, here called the Thick Concept Argument (TCA). While TCA is frequently invoked...

  12. MAGNETIC WOVEN FABRICS - PHYSICAL AND MAGNETIC PROPERTIES

    Directory of Open Access Journals (Sweden)

    GROSU Marian C

    2015-05-01

    Full Text Available A coated material is a composite structure that consists of at least two components: base material and coating layer. The purpose of coating is to provide special properties to base material, with potential to be applied in EMI shielding and diverse smart technical fields. This paper reports the results of a study about some physical and magnetic properties of coated woven fabrics made from cotton yarns with fineness of 17 metric count. For this aim, a plain woven fabric was coated with a solution hard magnetic polymer based. As hard magnetic powder, barium hexaferrite (BaFe12O19 was selected. The plain woven fabric used as base has been coated with five solutions having different amounts of hard magnetic powder (15% - 45% in order to obtain five different magnetic woven fabrics. A comparison of physical properties regarding weight (g/m2, thickness (mm, degree of charging (% and magnetic properties of magnetic woven samples were presented. Saturation magnetizing (emu/g, residual magnetizing (emu/g and coercive force (kA/m of pure hard magnetic powder and woven fabrics have been studied as hysteresis characteristics. The magnetic properties of the woven fabrics depend on the mass percentage of magnetic powder from coating solution. Also, the residual magnetism and coercive field of woven fabrics represents only a part of bulk barium hexafferite residual magnetism and coercive field.

  13. Antarctic Crustal Thickness from Gravity Inversion

    Science.gov (United States)

    Vaughan, A. P.; Kusznir, N. J.; Ferraccioli, F.; Jordan, T. A.

    2013-12-01

    Using gravity anomaly inversion, we have produced the first comprehensive regional maps of crustal thickness and oceanic lithosphere distribution for Antarctica and the Southern Ocean. We determine Moho depth, crustal basement thickness, continental lithosphere thinning (1-1/β) and ocean-continent transition location using a 3D spectral domain gravity inversion method, which incorporates a lithosphere thermal gravity anomaly correction. The continental lithosphere thinning distribution, used to define the initial thermal model temperature perturbation is derived from the gravity inversion and uses no a priori isochron information; as a consequence the gravity inversion method provides a prediction of ocean-continent transition location, which is independent of ocean isochron information. The gravity anomaly contribution from ice thickness is included in the gravity inversion, as is the contribution from sediments which assumes a compaction controlled sediment density increase with depth. Data used in the gravity inversion are elevation and bathymetry, free-air gravity anomaly, the most recent Bedmap2 ice thickness and bedrock topography compilation south of 60 degrees south (Fretwell et al., 2013) and relatively sparse constraints on sediment thickness. Our gravity inversion study predicts thick crust (> 45 km) under interior East Antarctica penetrated by narrow continental rifts that feature relatively thinner crust. The East Antarctic Rift System (EARS) is a major Permian to Cretaceous age rift system that appears to extend from the continental margin at the Lambert Rift to the South Pole region, a distance of 2500 km. This is comparable in scale to the well-studied East African rift system. Intermediate crustal thickness with an inferred linear rift fabric is predicted under Coates Land. An extensive region of either thick oceanic crust or highly thinned continental crust is predicted offshore Oates Land and north Victoria Land, and also off West Antarctica

  14. Thickness-dependent dielectric breakdown and nanopore creation on sub-10-nm-thick SiN membranes in solution

    Science.gov (United States)

    Yanagi, Itaru; Fujisaki, Koji; Hamamura, Hirotaka; Takeda, Ken-ichi

    2017-01-01

    Recently, dielectric breakdown of solid-state membranes in solution has come to be known as a powerful method for fabricating nanopore sensors. This method has enabled a stable fabrication of nanopores down to sub-2 nm in diameter, which can be used to detect the sizes and structures of small molecules. Until now, the behavior of dielectric breakdown for nanopore creation in SiN membranes with thicknesses of less than 10 nm has not been studied, while the thinner nanopore membranes are preferable for nanopore sensors in terms of spatial resolution. In the present study, the thickness dependence of the dielectric breakdown of sub-10-nm-thick SiN membranes in solution was investigated using gradually increased voltage pulses. The increment in leakage current through the membrane at the breakdown was found to become smaller with a decrease in the thickness of the membrane, which resulted in the creation of smaller nanopores. In addition, the electric field for dielectric breakdown drastically decreased when the thickness of the membrane was less than 5 nm. These breakdown behaviors are quite similar to those observed in gate insulators of metal-oxide-semiconductor devices. Finally, stable ionic-current blockades were observed when single-stranded DNA passed through the nanopores created on the membranes with thicknesses of 3-7 nm.

  15. A gyroscope fabrication method for high sensitivity and robustness to fabrication tolerances

    Science.gov (United States)

    Sung, Jungwoo; Kim, Jin Young; Seok, Seyeong; Kwon, Hyuckjin J.; Kim, Minseo; Kim, Geonhwee; Lim, Geunbae

    2014-07-01

    MEMS gyroscopes have favorable characteristics, including small size, high throughput, and low cost. The performance of MEMS gyroscopes depends on the displacement sensitivity of the capacitors. In this paper, we describe the fabrication of 300-µm-thick gyroscopes that can provide high displacement sensitivity and are robust to fabrication tolerances, i.e. deep reactive ion etch (DRIE) rate uniformity. When thick structures are perforated using DRIE to achieve high-aspect-ratio features, footing is commonly observed. However, we describe a fabrication method that circumvents problems associated with footing and side-wall etching, so that the gyroscopes can have uniform dimensions and small variations across the wafer. Using a post-fabrication translation approach, the position of capacitors is modified following DRIE, and the gap in the gyroscopes can be reduced to 3 μm, which leads to an aspect ratio of 100. Using this method, we fabricated MEMS gyroscopes that can overcome the DRIE aspect ratio limit and have capacitors with higher sensitivities than those of other gyroscopes, which typically employ substrates that are less than 100 µm thick. The gyroscope had a resonant frequency of 9.91 kHz, a quality factor of 2500 and a sensitivity of 23 mV/[deg/s].

  16. Arc-Discharge Synthesis and Microstructure Characterization of AlN Nanowires

    Institute of Scientific and Technical Information of China (English)

    Zhijie LI; Zhiqi SHEN; Fu WANG; Lianlong HE

    2006-01-01

    AIN nanowires with a hexagonal structure were synthesized using an improved arc-discharge method and their microstructures were characterized using a high-resolution transmission electron microscope. The synthesized AIN nanowires were of various shapes. Their diameters ranged from 20 to 110 nm and the lengths were up to 20μm. Most of the AIN nanowires were coated by an amorphous layer of aluminum oxide. Fabrication yield was about several grams. The growth mechanism was considered to be a vapor-liquid-solid process and an Al droplet formed on the top of as-grown AIN nanowire played a role of catalyst.

  17. Charging behavior of Al2O3 and AlN under positive and negative charge injection using a kV electron beam

    Science.gov (United States)

    Belhaj, M.; Paulmier, T.; Hanna, R.; Arnaout, M.; Balcon, N.; Payan, D.; Puech, J.

    2014-02-01

    Under electron irradiation, insulating materials may charge either negatively or positively depending on their electron emission properties and characteristics of the incident electrons. The electrical behavior of these materials is linked to the sign of the injected charge. The aim here is to describe an electron beam based method that can be used to study the electrical behaviors of insulators under either positive or negative charge injection. The method was tested on ceramics samples, Al2O3 and AlN. It was shown that the electrical behaviors of both materials under e-irradiation are very different according the sign of the injected charge. Negative charging results to stable space charge for Al2O3 and on the contrary it leads to a fast charge-decay for AlN. Remarkably, reversed trends are observed for positive charge injection. The practical consequences of these results are then discussed.

  18. Effects of external surface charges on the enhanced piezoelectric potential of ZnO and AlN nanowires and nanotubes

    Directory of Open Access Journals (Sweden)

    Seong Min Kim

    2012-12-01

    Full Text Available We theoretically investigate external surface charge effects on piezoelectric potential of ZnO and AlN nanowires (NWs and nanotubes (NTs under uniform compression. The free carrier depletion caused by negative surface charges via surface functionalization on vertically compressed ZnO and AlN NWs/NTs is simulated using finite element calculation; this indicates the enhancement of piezoelectric potential is due to the free carriers (electrons being fully depleted at the critical surface charge density. Numerical simulations reveal that full coverage of surface charges surrounding the NTs increases the piezoelectric output potential exponentially within a relatively smaller range of charge density compared to the case of NWs for a typical donor concentration (∼1017 cm−3. The model can be used to design functional high-power semiconducting piezoelectric nanogenerators.

  19. Charging behavior of Al{sub 2}O{sub 3} and AlN under positive and negative charge injection using a kV electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Belhaj, M., E-mail: Mohamed.Belhaj@onera.fr [ONERA, The French Aerospace Lab, 31055 Toulouse (France); Paulmier, T.; Hanna, R.; Arnaout, M. [ONERA, The French Aerospace Lab, 31055 Toulouse (France); Balcon, N.; Payan, D.; Puech, J. [CNES, Av Edourad Belin, Toulouse (France)

    2014-02-01

    Under electron irradiation, insulating materials may charge either negatively or positively depending on their electron emission properties and characteristics of the incident electrons. The electrical behavior of these materials is linked to the sign of the injected charge. The aim here is to describe an electron beam based method that can be used to study the electrical behaviors of insulators under either positive or negative charge injection. The method was tested on ceramics samples, Al{sub 2}O{sub 3} and AlN. It was shown that the electrical behaviors of both materials under e-irradiation are very different according the sign of the injected charge. Negative charging results to stable space charge for Al{sub 2}O{sub 3} and on the contrary it leads to a fast charge-decay for AlN. Remarkably, reversed trends are observed for positive charge injection. The practical consequences of these results are then discussed.

  20. Tight-binding branch-point energies and band offsets for cubic InN, GaN, AlN, and AlGaN alloys

    Science.gov (United States)

    Mourad, Daniel

    2013-03-01

    Starting with empirical tight-binding band structures, the branch-point (BP) energies and resulting valence band offsets for the zincblende phase of InN, GaN, and AlN are calculated from their k-averaged midgap energy. Furthermore, the directional dependence of the BPs of GaN and AlN is discussed using the Green's function method of Tersoff. We then show how to obtain the BPs for binary semiconductor alloys within a band-diagonal representation of the coherent potential approximation and apply this method to cubic AlGaN alloys. The resulting band offsets show good agreement to available experimental and theoretical data from the literature. Our results can be used to determine the band alignment in isovalent heterostructures involving pure cubic III-nitrides or AlGaN alloys for arbitrary concentrations.

  1. Thermo-Mechanical Optimization of a Gold Thick-film based SiC Die-attach Assembly using Finite Element Analysis

    Science.gov (United States)

    Lin, Shun-Tien; Chen, Liang-Yu

    2002-01-01

    A parametric study of the thermomechanical reliability of a Au thick-film based Sic-die- attach assembly using nonlinear finite element analysis (FEA) was conducted to optimize the die-attach thermo-mechanical performance for operation at temperatures from room temperature to 500 "C. This parametric study centered on material selection, structure design and process control. The die-attach assembly is composed of a 1 mm x 1 mm S i c die attached to a ceramic substrate (either 96% aluminum oxide (A1203) or aluminum nitride (AlN)) with a gold (Au) thick-film attach layer. The effects of die-size, Au attach layer thickness, substrate material, and stress relaxing temperature on the stress/strain distribution and relative fatigue lifetime of the die-attach assembly were numerically analyzed. By comparing the calculated permanent strain in the thick-film attach layer, FEA results indicate that AlN is superior to Al2O3. Thicker Au attach layers and smaller die sizes are recommended to reduce the permanent strain in thick-film die attach layer. Thicker S i c die also reduces the stress near the (top) surface region of the die. A stress relaxing temperature close to the midpoint of the operating temperature range further reduces the maximum stress/strain, thereby improving die-attach thermo-mechanical reliability. These recommendations present guidelines to optimize the thermo-mechanical performance of the die-attach assembly and are valid for a wide range of thermal environments.

  2. Fabrication of highly efficient flexible dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chang, H., E-mail: f10381@ntut.edu.t [Department of Mechanical Engineering, National Taipei University of Technology, No.1 Sec.3, Chung Hsiao E. Rd., Taipei 10608, Taiwan (China); Chen, T.L. [Department of Industrial Design, National Taipei University of Technology, No.1 Sec.3, Chung Hsiao E. Rd., Taipei 10608, Taiwan (China); Huang, K.D. [Department of Vehicle Engineering, National Taipei University of Technology, No.1 Sec.3, Chung Hsiao E. Rd., Taipei 10608, Taiwan (China); Chien, S.H. [Institute of Chemistry, Academia Sinica, No. 128 Sec.2, Academia Rd., Nankang, Taipei 11529, Taiwan (China); Hung, K.C. [Department of Mechanical Engineering, National Taipei University of Technology, No.1 Sec.3, Chung Hsiao E. Rd., Taipei 10608, Taiwan (China)

    2010-08-15

    The paper studies the fabrication of a flexible dye-sensitized solar cell (DSSC). The photoelectrode substrates are flexible stainless steel sheet with thickness 0.07 mm and titanium (Ti) sheet with thickness 0.25 mm. For the photoelectrode fabrication process, eletrophoresis deposition (EPD) was employed for its merits of low-cost and fast fabrication. With an electric field of 40 V/cm, after undergoing EPD process twice, the TiO{sub 2} nanofilm thickness could be controlled to around 13 {mu}m thick. In addition, to achieve counter electrode, sputtering method was applied to deposit Pt on ITO-PET, resulting in thin films with four different thicknesses of 5, 8, 11 and 14 nm. The experimental results showed that the best colloid solution used in EPD process was a mixture of 100 ml isopropyl alcohol (IPA) and 0.4 g commercial TiO{sub 2} nanoparticles, Degussa P25. The best flatness for a 13 {mu}m thick film could be acquired under an electric field of 40 V/cm. Comparing the photoelectric conversion efficiency values of DSSC assembled by counter electrodes with different Pt thicknesses, the experimental results showed that the best Pt thickness was 11 nm, and the conversion efficiency could reach as high as 2.91%.

  3. Structure and lattice dynamics of GaN and AlN. Ab-initio investigations of strained polytypes and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, Jan-Martin

    2004-10-14

    In this dissertation, ab-initio investigations of the strain influence on vibrational properties of GaN and AlN as well as of short-period GaN/AlN superlattices are presented. Based on densityfunctional theory and density-functional perturbation theory, for differently strained structures complete phonon spectra and related properties are calculated using the local-density approximation and norm-conserving pseudopotentials. (orig.)

  4. Increased upper critical field for nanocrystalline MoN thin films deposited on AlN buffered substrates at ambient temperature

    Science.gov (United States)

    Baskaran, R.; Thanikai Arasu, A. V.; Amaladass, E. P.; Vaidhyanathan, L. S.; Baisnab, D. K.

    2016-05-01

    Molybdenum nitride (MoN) thin films have been deposited using reactive DC magnetron sputtering on aluminum nitride buffered oxidized silicon substrates at ambient temperature. GIXRD of aluminum nitride (AlN) deposited under similar conditions has revealed the formation of wurtzite phase AlN. GIXRD characterization of molybdenum thin films deposited on AlN buffered oxidized silicon substrates has indicated the formation of nanocrystalline MoN thin films. The electrical resistivity measurements indicate MoN thin films have a superconducting transition temperature of ~8 K. The minimum transition width of the MoN thin film is 0.05 K at 0 T. The inferred upper critical field B c2(0) for these nanocrystalline MoN thin films obtained by fitting the temperature dependence of critical field with Werthamer, Helfand and Hohenberg theory lies in the range of 17-18 T which is the highest reported in literature for MoN thin films.

  5. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2012-03-15

    We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Besleaga, C.; Stan, G.E.; Pintilie, I. [National Institute of Materials Physics, 405A Atomistilor, 077125 Magurele-Ilfov (Romania); Barquinha, P.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal); Martins, R., E-mail: rm@uninova.pt [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa, and CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

    2016-08-30

    Highlights: • TFTs based on IGZO channel semiconductor and AlN gate dielectric were fabricated. • AlN films – a viable and cheap gate dielectric alternative for transparent TFTs. • Influence of gate dielectric layer thickness on TFTs electrical characteristics. • No degradation of AlN gate dielectric was observed during devices stress testing. - Abstract: The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium–gallium–zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium–gallium–zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

  7. Finite element analysis on stresses field of normalized layer thickness within ceramic coating on aluminized steel

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Multilayer ceramic coatings were fabricated on steel substrate using a combined technique of hot dipping aluminum(HDA)and plasma electrolytic oxidation(PEO). A triangle of normalized layer thickness was created for describing thickness ratios of HDA/PEO coatings. Then, the effect of thickness ratio on stresses field of HDA/PEO coatings subjected to uniform normal contact load was investigated by finite element method. Results show that the surface tensile stress is mainly affected by the thickness ratio of Al layer when the total thickness of coating is unchanged. With the increase of Al layer thickness, the surface tensile stress rises quickly. When Al2O3 layer thickness increases, surface tensile stress is diminished. Meanwhile, the maximum shear stress moves rapidly towards internal part of HDA/PEO coatings. Shear stress at the Al2O3/Al interface is minimal when Al2O3 layer and Al layer have the same thickness.

  8. Mems-based pzt/pzt bimorph thick film vibration energy harvester

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2011-01-01

    We describe fabrication and characterization of a significantly improved version of a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The main advantage of bimorph vibration energy harvesters is that strain energy is not lost in mechanical...... support materials since only PZT is strained, and thus it has a potential for significantly higher output power. An improved process scheme for the energy harvester resulted in a robust fabrication process with a record high fabrication yield of 98.6%. Moreover, the robust fabrication process allowed...... a high pressure treatment of the screen printed PZT thick films prior to sintering, improving the PZT thick film performance and harvester power output reaches 37.1 μW at 1 g....

  9. Optimum thickness of Mossbauer absorber

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    If recoilless fraction fa is available, the optimum absorber thickness dopt can be calculated by maximizing the signal to noise ratio or Q factor. In this work,an approach presented is to get experimental Qexp as a function of the thickness, and then fitting Qexp by its theoretical expression gives fa value. At last the dopt value is deduced from a maximum on the fitted curve. In such a way, thicknesses of six specimens with quadrupole or magnetic hyperfine splitting were optimized.

  10. Relationship between the Physical Properties and Hand of Jean Fabric

    Directory of Open Access Journals (Sweden)

    Kawamura Atsushi

    2016-09-01

    Full Text Available We investigated the distinctive characteristics of jean fabrics (denim fabrics obtained from jeans and compared the physical properties and the hand. We used 13 kinds of jean fabric from commercial jeans and 26 other fabric types. The physical properties were measured using the Kawabata evaluation system, and the fabric hand was evaluated by 20 subjects using a semantic differential method. To characterise the hand of jean fabrics compared with other fabrics, we used principal component analysis and obtained three principal components. We found that jean fabrics were characterised by the second principal component, which was affected by feelings of thickness and weight. We further characterised the jean fabrics according to ‘softness & smoothness’ and ‘non-fullness’, depending on country of origin and type of manufacturer. The three principal components were analysed using multiple linear regression to characterise the components according to the physical properties. We explained the hand of fabrics including jean fabrics using its association with physical properties.

  11. WITHDRAWN: p-Type ZnO thin films fabricated by Al-N co-doping method at different substrate temperature

    Science.gov (United States)

    Yuan, Guodong; Ye, Zhizhen; Qian, Qing; Zhu, Liping; Huang, Jingyun; Zhao, Binghui

    2009-07-01

    This article has been retracted at the request of the Editor-in-Chief of the Journal of Crystal Growth. This article has been retracted; please see Elsevier Policy on Article Withdrawal: http://www.elsevier.com/locate/withdrawalpolicy.

  12. Tensile and Flexural Properties of Cement Composites Reinforced with Flax Nonwoven Fabrics

    Directory of Open Access Journals (Sweden)

    Josep Claramunt

    2017-02-01

    Full Text Available The aim of this study is to develop a process to produce high-performance cement-based composites reinforced with flax nonwoven fabrics, analyzing the influence of the fabric structure—thickness and entanglement—on mechanical behavior under flexural and tensile loadings. For this purpose, composite with flax nonwoven fabrics with different thicknesses were first prepared and their cement infiltration was evaluated with backscattered electron (BSE images. The nonwoven fabrics with the optimized thickness were then subjected to a water treatment to improve their stability to humid environments and the fiber-matrix adhesion. For a fixed thickness, the effect of the nonwoven entanglement on the mechanical behavior was evaluated under flexural and direct tension tests. The obtained results indicate that the flax nonwoven fabric reinforcement leads to cement composites with substantial enhancement of ductility.

  13. Tensile and Flexural Properties of Cement Composites Reinforced with Flax Nonwoven Fabrics

    Science.gov (United States)

    Claramunt, Josep; Ventura, Heura; Fernández-Carrasco, Lucía J; Ardanuy, Mònica

    2017-01-01

    The aim of this study is to develop a process to produce high-performance cement-based composites reinforced with flax nonwoven fabrics, analyzing the influence of the fabric structure—thickness and entanglement—on mechanical behavior under flexural and tensile loadings. For this purpose, composite with flax nonwoven fabrics with different thicknesses were first prepared and their cement infiltration was evaluated with backscattered electron (BSE) images. The nonwoven fabrics with the optimized thickness were then subjected to a water treatment to improve their stability to humid environments and the fiber-matrix adhesion. For a fixed thickness, the effect of the nonwoven entanglement on the mechanical behavior was evaluated under flexural and direct tension tests. The obtained results indicate that the flax nonwoven fabric reinforcement leads to cement composites with substantial enhancement of ductility. PMID:28772573

  14. Static and dynamic through thickness lamina properties of thick laminates

    NARCIS (Netherlands)

    Lahuerta, F.; Nijssen, R.P.L.; Van der Meer, F.P.; Sluys, L.J.

    2015-01-01

    Thick laminates are increasingly present in large composites structures such as wind turbine blades. Different factors are suspected to be involved in the decreased static and dynamic performance of thick laminates. These include the effect of self-heating, the scaling effect, and the manufacturing

  15. Influence of annealing temperature on the magnetic properties of Cr{sup +} implanted AlN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A., E-mail: attaullah77@yahoo.com [National Institute of Lasers and Optronics (NILOP), PO Nilore, Islamabad (Pakistan); Mahmood, Arshad; Ali, Zahid; Ashraf, T. [National Institute of Lasers and Optronics (NILOP), PO Nilore, Islamabad (Pakistan); Ahmed, Ishaq [Experimental Physics Lab, National Center for Physics (NCP), Islamabad (Pakistan); Mehmood, Mazhar [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad Pakistan (Pakistan); Rashid, Rashad [National Institute of Lasers and Optronics (NILOP), PO Nilore, Islamabad (Pakistan); Shakir, Imran, E-mail: shakir@skku.edu [Sustainable Energy Technologies (SET) center building No 3, Room 1c23, College of Engineering, King Saud University, PO-BOX 800, Riyadh 11421 (Saudi Arabia)

    2015-04-01

    Diluted magnetic semiconductor (DMS) AlN:Cr films were produced by implanting various doses Cr{sup +} ions into AlN thin films at room temperature followed by a thermal annealing process. The structural and magnetic characteristics of the samples were investigated as a function of annealing temperature by means of Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Structural analyzes demonstrate that implantation damages gradually decrease with the increasing of annealing temperature. Moreover, better recrystallization in the implanted part of the samples was observed for the sample annealed at 950 °C. Both XRD and Raman pattern illustrate that no secondary phase or metal related-peaks were appear in all the samples. Magnetic analysis reveals that annealed Cr{sup +}-implanted samples exhibit ferromagnetism at room temperature, however, the sample annealed at 950 °C shows improved magnetic characteristics. The saturation magnetization is estimated to be 9.0×10{sup −5} emu/g and the coercive field (H{sub c}) is approximately 200 Oe for the samples annealed 950 °C. In SQUID analysis, FC/ZFC measurements indicate that the Curie temperature (T{sub C}) is well above room temperature.

  16. Influence of compositional changes of source materials on AlN synthesis using Li-Al-N solvent

    Energy Technology Data Exchange (ETDEWEB)

    Nagano, T. [Graduate School of Engineering, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Kangawa, Y. [Graduate School of Engineering, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan); Kakimoto, K. [Graduate School of Engineering, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2009-06-15

    We carried out AlN synthesis using Li-Al-N solvent. In the present work, Al and Li{sub 3}N were used as source materials. In this paper, we discuss the variation in phase stability of the products with change in Li-Al-N composition, i.e., Al/Li{sub 3}N molar ratio. The results suggest that LiAlO{sub 2} extra phase was formed in the products under an Al-rich synthesis condition. The oxide formation seems to be caused by oxidation of the nitrogen source. That is, some of the Li{sub 3}N reacted with H{sub 2}O in the ambient and to be LiOH, though preparation of the source materials was performed in a glove-box. On the other hand, scanning electron microscopy (SEM) images indicate the possibility of reducing nucleation sites and increasing grain size by optimizing the Al/Li{sub 3}N molar ratio. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    PAN Jian-Hai; WANG Xin-Qiang; CHEN Guang; LIU Shi-Tao; FENG Li; XU Fu-Jun; TANG Ning; SHEN Bo

    2011-01-01

    We investigate epitaxy of A1N layers on sapphire substrates by molecular beam epitaxy. It is found that an atomically Bat surface can be obtained under Al-rich conditions at growth temperature of 780°C. However, the growth window to obtain an Al-droplet-free surface is too narrow to be well-controlled. However, the growth window can be greatly broadened by increasing the growth temperature up to 950 "C, where an Al-droplet-free surface with a step-How feature is obtained due to the enhanced re-evaporization rate and migration ability of Al adatoms. The samples grown at the higher temperature also show a higher crystalline quality than those grown at lower temperatures.%@@ We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy.It is found that an atomically fiat surface can be obtained under Al-rich conditions at growth temperature of 780℃.However, the growth window to obtain an Al-droplet-free surface is too narrow to be well-controlled.However, the growth window can be greatly broadened by increasing the growth temperature up to 950℃, where an Al-droplet-free surface with a step-flow feature is obtained due to the enhanced re-evaporization rate and migration ability of Al adatoms.The samples grown at the higher temperature also show a higher crystalline quality than those grown at lower temperatures.

  18. Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers

    Energy Technology Data Exchange (ETDEWEB)

    Cayrel, F., E-mail: frederic.cayrel@univ-tours.fr [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Bazin, A.E. [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Lamhamdi, M.; Benchanaa, Y. [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Menard, O. [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Alquier, D. [Universite Francois Rabelais de Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)

    2012-02-01

    Gallium nitride (GaN) is a promising material for power electronic devices. Due to GaN sensitivity to high temperature treatments, dopant activation, after ion implant, is one of the major critical steps to be overcome. An annealing cap layer is then mandatory during high temperature treatment to avoid degradations. In this work, cap layers, such as AlN and SiO{sub x}, were deposited on Si-implanted N-type GaN. Samples were annealed using both classical (FA) and rapid thermal (RTA) annealing for times ranging from 30 s to 8 h and temperatures from 1000 to 1150 Degree-Sign C. Transmission Electron Microscopy has been done to observe the implanted layer structure. After cap layer removal, samples surface has been investigated through Atomic Force Microscopy measurements. Dopant activity was indirectly evaluated by Specific Contact Resistance (SCR) measurements. This work demonstrates that low SCR value (8.2 Multiplication-Sign 10{sup -5} {Omega} cm{sup 2}) with low surface roughness ({approx}1 nm) can be reached using RTA and an oxide cap layer. However, presence of hexagonal pits in GaN layer is difficult to avoid. Compromise between low SCR with low roughness value and low hexagonal pits density on the GaN surface must be found.

  19. Laser Direct Writing of Thick Hybrid Polymers for Microfluidic Chips

    OpenAIRE

    Akanksha Singh; Gianmario Scotti; Tiina Sikanen; Ville Jokinen; Sami Franssila

    2014-01-01

    This work presents patterning of thick (10–50 µm) hybrid polymer structures of ORMOCER® by laser direct writing. ORMOCER® combine polymer-like fabrication processes with glass-like surface chemistry that is beneficial for many bio-microfluidic applications. ORMOCER® is liquid before exposure, so patterning is done by contact-free lithography, such as proximity exposure. With laser direct writing, we obtained higher resolution patterns, with smaller radius of curvature (~2–4 µm), compared to p...

  20. Facile Fabrication of Multifunctional Hybrid Silk Fabrics with Controllable Surface Wettability and Laundering Durability.

    Science.gov (United States)

    Chen, Fengxiang; Yang, Huiyu; Liu, Xin; Chen, Dongzhi; Xiao, Xingfang; Liu, Keshuai; Li, Jing; Cheng, Fan; Dong, Binhai; Zhou, Yingshan; Guo, Zhiguang; Qin, Yong; Wang, Shimin; Xu, Weilin

    2016-03-02

    To obtain a hydrophobic surface, TiO2 coatings are deposited on the surface of silk fabric using atomic layer deposition (ALD) to realize a hierarchical roughness structure. The surface morphology and topography, structure, and wettability properties of bare silk fabric and TiO2-coated silk fabrics thus prepared are evaluated using scanning electron microscopy (SEM), field-emission scanning electron microscopy (FESEM), scanning probe microscope (SPM), X-ray diffraction (XRD), static water contact angles (WCAs), and roll-off angles, respectively. The surfaces of the silk fabrics with the TiO2 coatings exhibit higher surface roughnesses compared with those of the bare silk fabric. Importantly, the hydrophobic and laundering durability properties of the TiO2-coated silk fabrics are largely improved by increasing the thickness of the ALD TiO2 coating. Meanwhile, the ALD process has a litter effect on the service performance of silk fabric. Overall, TiO2 coating using an ALD process is recognized as a promising approach to produce hydrophobic surfaces for elastic materials.

  1. Ceramic tape fabrication: a review

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    2005-04-01

    The production flow for green tapes can be roughly divided into the production of slip and the tape casting/tape calendering process. A slip usually consists of ceramic powder, solvents, binders, plasticizers and dispersants. The preparation of the slip is a critical step in the fabrication of ceramic tapes. To obtain a homogeneous slip, the organic additives must first be weighed and dissolved in the solvent. The ceramic powder is then dispersed and existing agglomerates destroyed. A dispersant is added to prevent the reformation of agglomerates. If necessary, the viscosity is then adjusted, and the slip filtered. The exact sequence depends on the type of slip and the equipment used. To destroy the agglomerates, a wide range of mills is employed, from ball mills through attritor mills to ultrasonic devices (mainly on laboratory scale). A wide variety of grinding media, with different sizes, geometries and materials, is also used. The selection depends largely on the characteristics of the slip (e.g.: viscosity, wettability, drying behaviour), the required properties of the ceramic tapes (permitted content of impurities, sintering behaviour) and the quantities to be processed. In most cases, an actual grinding effect, i.e. size reduction of the particles, is avoided. Some of the most commonly used devices are described. At present, tapes with a thickness of 5 {mu}m can be fabricated - in the next years, thicknesses of around 1{mu}m must be reached. To enable this, slip preparation must be further improved and production performed in an absolutely clean environment (for specific products clean rooms are already standard, but even higher clean room standards will be needed in the future). Moreover, new, finer ceramic powders are necessary with particle sizes on the nanometer scale (nanopowders). (orig.)

  2. Transparent Oxide TFTs Fabricated by Atomic Layer Deposition

    Science.gov (United States)

    2014-04-17

    Fabrication of ZnO TFTs A diagram of the bottom-gate-type ZnO TFTs fabricated in this study is shown in Fig. 3. Fifty-nanometer-thick SiO2 or Al2O3 gate...Hattori, N. Miyatake, M. Horita, Y. Ishikawa and Y. Uraoka: Jpn. J. Appl. Phys. 51 (2012) 02BF04. [19] R. Martins, P. Barquinha, I. Ferreira, L

  3. Density determination of nano-layers depending to the thickness by non-destructive method

    Energy Technology Data Exchange (ETDEWEB)

    Gacem, A. [Département des Sciences Fondamentales, Faculté des Sciences et Sciences de l' Ingénieur, Université 20 Aout.1955, Skikda, BP 26, DZ-21000 Algérie and Laboratoire des Semi-Conducteurs, Département de Physique (Algeria); Doghmane, A.; Hadjoub, Z. [Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, BP 12, Annaba, DZ-23000 (Algeria)

    2013-12-16

    Non-destructive tests used to characterize and observe the state of the solids near the surface or at depth, without damaging them or damaging them. Density is frequently used to follow the variations of the physical structure of the samples, as well as in the calculation of quantity of material required to fill a given volume, and it is also used to determine the homogeneity of a sample. However, the measurement of the acoustic properties (density, elastic constants,…) of a thin film whose thickness is smaller than several atomic layers is not easy to perform. For that reason, we expose in this work the effects of the thicknesses of thin films on the evolution of the density, where several samples are analyzed. The samples selected structures are thin films deposited on substrates, these coatings have thicknesses varying from a few atomic layers to ten or so micrometers and can change the properties of the substrate on which they are deposited. To do so, we considered a great number of layers (Cr, Al, SiO{sub 2}, ZnO, Cu, AlN, Si{sub 3}N{sub 4}, SiC) deposited on different substrates (Al{sub 2}O{sub 3}, Cu and Quartz). It is first shown that the density exhibits a dispersive behaviour. Such a behaviour is characterized by an initial increase (or decrease) followed by a saturated region. Further investigations of these dependences led to the determination of a semi-empirical universal relations, ρ=f(h/λ{sub T}), for all the investigated layer/substrate combination. Such expression could be of great importance in the density prediction of even layers thicknesses.

  4. Huge thick conglomerate movement induced by full thick longwall mining huge thick coal seam

    Institute of Scientific and Technical Information of China (English)

    Ma Liqiang; Qiu Xiaoxiang; Dong Tao; Zhang Jixiong; Huang Yanli

    2012-01-01

    A discrete elemental method was used to study the thickness of conglomerate layer in a full thick seam mining activities under the influence of the law,pointing out the thickness of the conglomerate at different seam mining,and during the destruction and instability of existing state of laws.At 21141 thick seam mining,the face toward the direction of separation between the thick layer of conglomerate rock and the next bit after reaching its maximum capacity due to pull from the bottom of the plastic zone,formed a stratified and hierarchical down collapse.The shape of caving area is a "triangular block",the length of the plastic zone and face advancement from the linear fit between the height of the plastic zone and the advancing face is a quadratic function of distance,while the top layer of thick gravel layer is the overall bending subsidence trend.Tilting the direction of the face,a thick gob of collapsed conglomerate layer is formed in the coal gob entity on both sides of the thick conglomerate at the top of the overall fracture morphology performance,thus forming a mutual extrusion of articulated block structure.The instability,separation and balance of the thick conglomerate layer in the hinged block stope stress leads to abnormal occurrence of rock burst induced by face as the major factor in the accident.This research reveals the form of stress distribution in the destroyed layer of the thick conglomerate rock,analyzes the stope law of coupling for the pressure burst behavior law for the mining work face,and the choice of preventive measures to provide a theoretical basis and implementation.

  5. Thick-film materials for silicon photovoltaic cell manufacture

    Science.gov (United States)

    Field, M. B.

    1977-01-01

    Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

  6. Development of thick wall welding and cutting tools for ITER

    Energy Technology Data Exchange (ETDEWEB)

    Nakahira, Masataka; Takahashi, Hiroyuki; Akou, Kentaro; Koizumi, Koichi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-04-01

    The Vacuum Vessel, which is a core component of International Thermonuclear Experimental Reactor (ITER), is required to be exchanged remotely in a case of accident such as superconducting coil failure. The in-vessel components such as blanket and divertor are planned to be exchanged or fixed. In these exchange or maintenance operations, the thick wall welding and cutting are inevitable and remote handling tools are necessary. The thick wall welding and cutting tools for blanket are under developing in the ITER R and D program. The design requirement is to weld or cut the stainless steel of 70 mm thickness in the narrow space. Tungsten inert gas (TIG) arc welding, plasma cutting and iodine laser welding/cutting are selected as primary option. Element welding and cutting tests, design of small tools to satisfy space requirement, test fabrication and performance tests were performed. This paper reports the tool design and overview of welding and cutting tests. (author)

  7. Fabricating architectural volume

    DEFF Research Database (Denmark)

    Feringa, Jelle; Søndergaard, Asbjørn

    2015-01-01

    The 2011 edition of Fabricate inspired a number of collaborations, this article seeks to highlight three of these. There is a common thread amongst the projects presented: sharing the ambition to close the rift between design and fabrication while incorporating structural design aspects early on...

  8. Thick-film acoustic emission sensors for use in structurally integrated condition-monitoring applications.

    Science.gov (United States)

    Pickwell, Andrew J; Dorey, Robert A; Mba, David

    2011-09-01

    Monitoring the condition of complex engineering structures is an important aspect of modern engineering, eliminating unnecessary work and enabling planned maintenance, preventing failure. Acoustic emissions (AE) testing is one method of implementing continuous nondestructive structural health monitoring. A novel thick-film (17.6 μm) AE sensor is presented. Lead zirconate titanate thick films were fabricated using a powder/sol composite ink deposition technique and mechanically patterned to form a discrete thick-film piezoelectric AE sensor. The thick-film sensor was benchmarked against a commercial AE device and was found to exhibit comparable responses to simulated acoustic emissions.

  9. Compaction Behavior and Part Thickness Variation in Vacuum Infusion Molding Process

    Science.gov (United States)

    Yang, Jinshui; Xiao, Jiayu; Zeng, Jingcheng; Jiang, Dazhi; Peng, Chaoyi

    2012-06-01

    In vacuum infusion molding process (VIMP), it is difficult to manufacture a composite part with small dimensional tolerance, since the upper mold for the process is flexible. In this study, the static and cyclic compaction responses of five kinds of fabrics were experimentally studied under real VIMP conditions, with the effects of compaction pressure, compaction time, compaction cycle and number of the fabric layers. The static and cyclic compaction responses of the all fabrics follow different power law models and the resulting fiber volume fraction and relaxation factor increase with the number of layers. Although the resulting fiber volume fraction increases with the layer numbers, change of the fiber volume fraction of the composite parts with 10 layers to 100 layers of the all fabrics is less than 2.5%. The thickness of the composite part was monitored and measured using micrometer gauges, and the effects of processing parameters on the final thickness of part was investigated. The part thickness varies as a function of spatial coordinates and time during pre-filling, filling and post-filling stages in VIMP. The variation and the final value of the part thickness would be significantly affected by the processing parameters. Statistical results show that the final part thickness is equivalent to the thickness of the dry preform under the 0.08 MPa vacuum compaction pressure in VIMP. The difference between the fiber volume fraction of the final part and that of the dry preform is 2% ~ 5.7%.

  10. Peripapillary choroidal thickness in childhood.

    Science.gov (United States)

    Read, Scott A; Alonso-Caneiro, David; Vincent, Stephen J; Collins, Michael J

    2015-06-01

    Changes in the thickness of the invivo peripapillary choroid have been documented in a range of ocular conditions in adults; however, choroidal thickness in the peripapillary region of children has not been examined in detail. This study therefore aimed to investigate the thickness of the peripapillary choroid and the overlying retinal nerve fibre layer (RNFL) in a population of normal children with a range of refractive errors. Ninety-three children (37 myopes and 56 non-myopes) aged between 11 and 16 years, had measurements of peripapillary choroidal and RNFL thickness derived from enhanced depth imaging optical coherence tomography images (EDI-OCT, Heidelberg Spectralis). The average thickness was determined in a series of five 0.25 mm width concentric annuli (each divided into 8 equal sized 45° sectors) centred on the optic nerve head boundary, accounting for individual ocular magnification factors and the disc-fovea angle. Significant variations in peripapillary choroidal thickness were found to occur with both annulus location (p choroid (mean 77 ± 16 μm) and the outermost annulus, the thickest choroid (191 ± 52 μm). The choroid was thinnest inferior to the optic nerve head (139 ± 38 μm) and was thickest in the superior temporal sector (157 ± 40 μm). Significant differences in the distribution of choroidal thickness were also associated with myopia, with myopic children having significantly thinner choroids in the inner and outer annuli of the nasal and temporal sectors respectively (p thickness also varied significantly with annulus location and sector (p thickness distribution associated with refractive error. This study establishes the normal variations in the thickness of the peripapillary choroid with radial distance and azimuthal angle from the optic nerve head boundary. A significant thinning of the peripapillary choroid associated with myopia in childhood was also observed in both nasal and temporal regions. The changes in peripapillary RNFL

  11. Spacer Thickness-Dependent Electron Transport Performance of Titanium Dioxide Thick Film for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Reda E. El-Shater

    2015-01-01

    Full Text Available A titanium dioxide (P25 film was deposited by cast coating as conductive photoelectrode and subsequently immersed in dye solution (N719 to fabricate the photoanode of dye-sensitized solar cells (DSSCs. A plastic spacer was used as a separation and sealant layer between the photoanode and the counter electrode. The effect of the thickness of this spacer on the transfer of electrons in the liquid electrolyte of the DSSCs was studied by means of both IV curves and electrochemical impedance. Using a spacer thickness range of 20 μm to 50 μm, efficiency ranges from 3.73% to 7.22%. The highest efficiency of 7.22% was obtained with an optimal spacer thickness of 40 μm.

  12. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    Science.gov (United States)

    Besleaga, C.; Stan, G. E.; Pintilie, I.; Barquinha, P.; Fortunato, E.; Martins, R.

    2016-08-01

    The degradation of thin-film transistors (TFTs) caused by the self-heating effect constitutes a problem to be solved for the next generation of displays. Aluminum nitride (AlN) is a viable alternative for gate dielectric of TFTs due to its good thermal conductivity, matching coefficient of thermal expansion to indium-gallium-zinc-oxide, and excellent stability at high temperatures. Here, AlN thin films of different thicknesses were fabricated by a low temperature reactive radio-frequency magnetron sputtering process, using a low cost, metallic Al target. Their electrical properties have been thoroughly assessed. Furthermore, the 200 nm and 500 nm thick AlN layers have been integrated as gate-dielectric in transparent TFTs with indium-gallium-zinc-oxide as channel semiconductor. Our study emphasizes the potential of AlN thin films for transparent electronics, whilst the functionality of the fabricated field-effect transistors is explored and discussed.

  13. Effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c-plane sapphire by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, J.S.; Hao, Y.; Yang, L.A. [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, 710071 Xi' an (China); Zhang, J.C. [School of Microelectronics, Xidian University, 710071 Xi' an (China)

    2010-10-15

    The effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c-plane sapphire by metal organic chemical vapor deposition has been investigated by high resolution X-ray diffraction (HRXRD) and Raman spectroscopy. It is concluded that the crystalline quality of GaN epilayers is improved significantly by using the high temperature AlN (HT-AlN) interlayer in GaN buffers. The density of threading dislocation is reduced especially for edge type dislocations. Higher compressive stress exists in GaN epilayers with HT-AlN interlayer than with low temperature AlN (LT-AlN) interlayer, which is related to the reduction of strain relaxation caused by the formation of misfit dislocation. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Synthesis of MgO-CaO-Al2O3-SiO2 nanocomposite powder by polymeric complex method as a novel sintering additive of AlN ceramics

    Science.gov (United States)

    Lee, Hwa-Jun; Cho, Woo-Seok; Kim, Hyeong Jun; Pan, Wei; Shahid, Mohammad; Ryu, Sung-Soo

    2016-09-01

    A MgO-CaO-Al2O3-SiO2 (MCAS) nanocomposite powder with a particle size of 50 nm and a specific surface area of 40.6 m2/g was successfully synthesized via heat-treatment of polymeric precursors containing Mg, Ca, Al and Si in air at 700 °C for 5 h. It was characterized as a novel sintering additive for the densification AlN ceramics at a low temperature below 1600 °C. It was found that the nanosized MCAS powder was suitable for the densification of AlN ceramics. In particular, full densification could be achieved when only 1.0 wt% MCAS additive-doped AlN powder compact was sintered for 1 h at 1600 °C, and a thermal conductivity of 84 W/m·K was attained.

  15. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    Science.gov (United States)

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-01-01

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  16. A Wear Geometry Model of Plain Woven Fabric Composites

    Directory of Open Access Journals (Sweden)

    Gu Dapeng

    2014-09-01

    Full Text Available The paper g describes a model meant for analysis of the wear geometry of plain woven fabric composites. The referred model consists of a mathematical description of plain woven fabric based on Peirce’s model coupled with a stratified method for the solution of the wear geometry. The evolutions of the wear area ratio of weft yarn, warp yarn and matrix resin on the worn surface are simulated by MatLab software in combination of warp and weft yarn diameters, warp and weft yarn-to-yarn distances, fabric structure phases (SPs. By comparing theoretical and experimental results from the PTFE/Kevlar fabric wear experiment, it can be concluded that the model can present a trend of the component area ratio variations along with the thickness of fabric, but has a inherently large error in quantitative analysis as an idealized model.

  17. Real-time observation system development for high-temperature liquid/solid interfaces and its application to solid-source solution growth of AlN

    Science.gov (United States)

    Kangawa, Yoshihiro; Kusaba, Akira; Sumiyoshi, Hiroaki; Miyake, Hideto; Boćkowski, Michał; Kakimoto, Koichi

    2015-06-01

    Interfacial phenomena at the liquid/solid interface under high temperatures were observed in real time to understand the growth process of AlN during solid-source solution growth. In this study, we used an AlN/α-Al2O3 template as the substrate; these wide-bandgap materials made the substrate transparent to visible light. Therefore, we observed the morphology of the liquid/solid interface through the template from the bottom. In this investigation, a polycrystal formed because of melt-back etching during the initial stage of growth; nevertheless, we succeeded in obtaining real-time images of interfacial phenomena.

  18. Controlling the morphology of GaN layers grown on AlN in Ga self-surfactant conditions: from quantum wells to quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Adelmann, C.; Daudin, B.; Monroy, E.; Sarigiannidou, E.; Rouviere, J.L.; Hori, Y.; Brault, J.; Gogneau, N. [Departement de Recherche Fondamentale sur la Matiere Condensee, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9 (France); Fanget, S.; Bru-Chevallier, C. [Laboratoire de Physique de la Matiere - CNRS (UMR5511), INSA de Lyon, Batiment Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2002-12-01

    We show that the growth mode of GaN deposited by plasma-assisted molecular beam epitaxy on AlN can be controlled by tuning Ga/N ratio. This enables to grow either quantum dots (Ga/N<1) or quantum wells (Ga/N>>1). The inhibition of 2D/3D transition results from a decrease in effective mismatch induced by the presence of a continuous Ga film on growing GaN surface in Ga-rich conditions. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  19. Beneficial effects of AlN as sintering aid on microstructure and mechanical properties of hot-pressed ZrB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Monteverde, F.; Bellosi, A. [National Research Council, Institute of Science and Technology for Ceramics, Via Granarolo 64, 48018 Faenza (Italy)

    2003-07-01

    Higher density of ZrB{sub 2} ceramics than with the pure material is achieved when 4.6 % of aluminum nitride are added before hot-pressing as a sintering aid. AlN supports densification and prevents grain coarsening, mainly by virtue of its ability to remove the boron oxide layer that otherwise covers ZrB{sub 2} particles. The new material (see Figure for an SEM image of a polished section) has outstanding mechanical properties, e.g. strength values of 600 and 200 MPa at 25 and 1500 C. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  20. GaN Nanowire Devices: Fabrication and Characterization

    Science.gov (United States)

    Scott, Reum

    The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

  1. New polymorphous computing fabric.

    Energy Technology Data Exchange (ETDEWEB)

    Wolinski, C. (Christophe); Gokhale, M. (Maya); McCabe, K. P. (Kevin P.)

    2002-01-01

    This paper introduces a new polymorphous computing Fabric well suited to DSP and Image Processing and describes its implementation on a Configurable System on a Chip (CSOC). The architecture is highly parameterized and enables customization of the synthesized Fabric to achieve high performance for a specific class of application. For this reason it can be considered to be a generic model for hardware accelerator synthesis from a high level specification. Another important innovation is the Fabric uses a global memory concept, which gives the host processor random access to all the variables and instructions on the Fabric. The Fabric supports different computing models including MIMD, SPMD and systolic flow and permits dynamic reconfiguration. We present a specific implementation of a bank of FIR filters on a Fabric composed of 52 cells on the Altera Excalibur ARM running at 33 MHz. The theoretical performance of this Fabric is 1.8 GMACh. For the FIR application we obtain 1.6 GMAC/s real performance. Some automatic tools have been developed like the tool to provide a host access utility and assembler.

  2. Design and fabrication of an E-shaped wearable textile antenna on PVB-coated hydrophobic polyester fabric

    Science.gov (United States)

    Babu Roshni, Satheesh; Jayakrishnan, M. P.; Mohanan, P.; Peethambharan Surendran, Kuzhichalil

    2017-10-01

    In this paper, we investigated the simulation and fabrication of an E-shaped microstrip patch antenna realized on multilayered polyester fabric suitable for WiMAX (Worldwide Interoperability for Microwave Access) applications. The main challenges while designing a textile antenna were to provide adequate thickness, surface uniformity and water wettability to the textile substrate. Here, three layers of polyester fabric were stacked together in order to obtain sufficient thickness, and were subsequently dip coated with polyvinyl butyral (PVB) solution. The PVB-coated polyester fabric showed a hydrophobic nature with a contact angle of 91°. The RMS roughness of the uncoated and PVB-coated polyester fabric was about 341 nm and 15 nm respectively. The promising properties, such as their flexibility, light weight and cost effectiveness, enable effortless integration of the proposed antenna into clothes like polyester jackets. Simulated and measured results in terms of return loss as well as gain were showcased to confirm the usefulness of the fabricated prototype. The fabricated antenna successfully operates at 3.37 GHz with a return loss of 21 dB and a maximum measured gain of 3.6 dB.

  3. High energy-density 0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 thick films fabricated by tape casting for energy-harvesting-device applications

    Science.gov (United States)

    Jeon, Chang Jun; Hwang, Ha Na; Jeong, Young Hun; Yun, Ji Sun; Nam, Joong Hee; Cho, Jeong Ho; Paik, Jong Hoo; Lim, Jong Bong; Nahm, Sahn; Kim, Eung Soo

    2013-11-01

    0.72Pb(Zr0.47Ti0.53)O3-0.28Pb[(Zn0.45Ni0.55)1/3Nb2/3]O3 (0.72PZT-0.28PZNN) thick films were prepared by using a tape casting method to develop new materials with high energy-density applicable to energy-harvesting devices. The piezoelectric strain constant ( d 33), dielectric constant ( ɛ {33/ T }/ ɛ 0), piezoelectric voltage constant ( g 33) and transduction coefficient ( d 33· g 33) of the films were affected by the sintering temperature. These results could be attributed to the crystal structure, microstructures and secondary phases. However, the dielectric loss (tan δ) of the films was not changed remarkably with increasing sintering temperature. Typically, a d 33 of 452 pC/N, ɛ {33/ T }/ ɛ 0 of 1444, d 33· g 33 of 20,340 × 10-15 m2/N and tan δ of 0.15% were obtained for the films sintered at 1050 °C for 1 h. The power generation performance of the piezoelectric unimorph cantilever was assessed to demonstrate the feasibility of the 0.72PZT-0.28PZNN piezoelectric thick film. Also, theoretical models were employed to predict the resonance frequency of the unimorph cantilever generator, and the predicted values were compared with experimental data.

  4. Objective Evaluation of Fabric Drape

    Institute of Scientific and Technical Information of China (English)

    XU Jun; YAO Mu

    2002-01-01

    On the basis of our previous research work, an expressing index was proposed for the lively degree of dynamic fabric drape. Meanwhile, the main factoranalysis for parameters of fabric drape was applied and the 5 main factors, comprehensive indexes of expressing aesthetics of fabric drape, were obtained. Through the scored diagrams of main factors of fabric drape aesthetics, 100 kinds of fabric samples could be identified and catalogued. A new method was found out for the objective evaluation of aesthetics of fabric drape.

  5. Fabrication of complex metallic nanostructures by nanoskiving.

    Science.gov (United States)

    Xu, Qiaobing; Rioux, Robert M; Whitesides, George M

    2007-10-01

    This paper describes the use of nanoskiving to fabricate complex metallic nanostructures by sectioning polymer slabs containing small, embedded metal structures. This method begins with the deposition of thin metallic films on an epoxy substrate by e-beam evaporation or sputtering. After embedding the thin metallic film in an epoxy matrix, sectioning (in a plane perpendicular or parallel to the metal film) with an ultramicrotome generates sections (which can be as thin as 50 nm) of epoxy containing metallic nanostructures. The cross-sectional dimensions of the metal wires embedded in the resulting thin epoxy sections are controlled by the thickness of the evaporated metal film (which can be as small as 20 nm) and the thickness of the sections cut by the ultramicrotome; this work uses a standard 45 degrees diamond knife and routinely generates slabs 50 nm thick. The embedded nanostructures can be transferred to, and positioned on, planar or curved substrates by manipulating the thin polymer film. Removal of the epoxy matrix by etching with an oxygen plasma generates free-standing metallic nanostructures. Nanoskiving can fabricate complex nanostructures that are difficult or impossible to achieve by other methods of nanofabrication. These include multilayer structures, structures on curved surfaces, structures that span gaps, structures in less familiar materials, structures with high aspect ratios, and large-area structures comprising two-dimensional periodic arrays. This paper illustrates one class of application of these nanostructures: frequency-selective surfaces at mid-IR wavelengths.

  6. Tube wall thickness measurement apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Lagasse, P.R.

    1985-06-21

    An apparatus for measuring the thickness of a tube's wall for the tube's entire length and radius by determining the deviation of the tube wall thickness from the known thickness of a selected standard item. The apparatus comprises a base and a first support member having first and second ends. The first end is connected to the base and the second end is connected to a spherical element. A second support member is connected to the base and spaced apart from the first support member. A positioning element is connected to and movable relative to the second support member. An indicator is connected to the positioning element and is movable to a location proximate the spherical element. The indicator includes a contact ball for first contacting the selected standard item and holding it against the spherical element. The contact ball then contacts the tube when the tube is disposed about the spherical element. The indicator includes a dial having a rotatable needle for indicating the deviation of the tube wall thickness from the thickness of the selected standard item.

  7. Tube wall thickness measurement apparatus

    Science.gov (United States)

    Lagasse, P.R.

    1985-06-21

    An apparatus for measuring the thickness of a tube's wall for the tube's entire length and radius by determining the deviation of the tube wall thickness from the known thickness of a selected standard item. The apparatus comprises a base and a first support member having first and second ends. The first end is connected to the base and the second end is connected to a spherical element. A second support member is connected to the base and spaced apart from the first support member. A positioning element is connected to and movable relative to the second support member. An indicator is connected to the positioning element and is movable to a location proximate the spherical element. The indicator includes a contact ball for first contacting the selected standard item and holding it against the spherical element. The contact ball then contacts the tube when the tube is disposed about the spherical element. The indicator includes a dial having a rotatable needle for indicating the deviation of the tube wall thickness from the thickness of the selected standard item.

  8. Tube wall thickness measurement apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Lagasse, Paul R. (Santa Fe, NM)

    1987-01-01

    An apparatus for measuring the thickness of a tube's wall for the tube's entire length and circumference by determining the deviation of the tube wall thickness from the known thickness of a selected standard item. The apparatus comprises a base and a first support member having first and second ends. The first end is connected to the base and the second end is connected to a spherical element. A second support member is connected to the base and spaced apart from the first support member. A positioning element is connected to and movable relative to the second support member. An indicator is connected to the positioning element and is movable to a location proximate the spherical element. The indicator includes a contact ball for first contacting the selected standard item and holding it against the spherical element. The contact ball then contacts the tube when the tube is disposed about the spherical element. The indicator includes a dial having a rotatable needle for indicating the deviation of the tube wall thickness from the thickness of the selected standard item.

  9. Alloy Fabrication Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — At NETL’s Alloy Fabrication Facility in Albany, OR, researchers conduct DOE research projects to produce new alloys suited to a variety of applications, from gas...

  10. Experimental Fabrication Facility

    Data.gov (United States)

    Federal Laboratory Consortium — Provides aviation fabrication support to special operations aircraft residing at Fort Eustis and other bases in the United States. Support is also provided to AATD...

  11. Novel thick-foam ferroelectret with engineered voids for energy harvesting applications

    Science.gov (United States)

    Luo, Z.; Shi, J.; Beeby, S. P.

    2016-11-01

    This work reports a novel thick-foam ferroelectret which is designed and engineered for energy harvesting applications. We fabricated this ferroelectret foam by mixing a chemical blowing agent with a polymer solution, then used heat treatment to activate the agent and create voids in the polymer foam. The dimensions of the foam, the density and size of voids can be well controlled in the fabrication process. Therefore, this ferroelectret can be engineered into optimized structure for energy harvesting applications.

  12. Thickness and fit of mouthguards according to heating methods.

    Science.gov (United States)

    Mizuhashi, Fumi; Koide, Kaoru; Takahashi, Mutsumi

    2014-02-01

    The purpose of this study was to examine the difference in the thickness and fit of mouthguards made by four different heating methods of the mouthguard sheet material. A Sports Mouthguard(®) of 3.8-mm thickness was used in this study. Four heating methods were performed. In one method, the sheet was heated only one side. In the other methods, one side of the sheet was heated first until the center of the sheet was displaced by 0.5 cm, 1.0 cm, and 1.5 cm from the baseline, and then turned upside down and heated. The sheets were adapted using a vacuum former when the heated sheets hung 1.5 cm from the baseline. We measured the thickness and fit of the mouthguard at the areas of the central incisor and first molar. The difference in thickness at the central incisor and first molar regions was analyzed by two-way anova. The difference in fit with different heating methods was analyzed by one-way anova. The results showed that the thickness of the mouthguard differed in the central incisor and first molar areas (P heating methods. The fit of the mouthguard at the central incisor and first molar areas was significantly different among the heating methods (P heated surface of the sheet contacted the surface of the working model. This finding may help to fabricate accurate mouthguards.

  13. Fabric Structures Team Overview

    Science.gov (United States)

    2009-11-01

    SUPPLEMENTARY NOTES 6th Bi-Annual DOD JOCOTAS Meeting with Rigid & Soft Wall Shelter Industry & Indoor & Outdoor Exhibition, 2-4 Nov 2009, Panama City...Maintenance Shelter Demonstrated in July 09 • Designed and fabricated by Hunter Defense Technologies/Vertigo Shelters (prime), Johnson Outdoors ...Congressionally directed program with Nemo , Inc., Nashua, NH f• Designs include novel in latable airbeam technology and tensioned fabric/pole

  14. Nuclear Fabrication Consortium

    Energy Technology Data Exchange (ETDEWEB)

    Levesque, Stephen [EWI, Columbus, OH (United States)

    2013-04-05

    This report summarizes the activities undertaken by EWI while under contract from the Department of Energy (DOE) Office of Nuclear Energy (NE) for the management and operation of the Nuclear Fabrication Consortium (NFC). The NFC was established by EWI to independently develop, evaluate, and deploy fabrication approaches and data that support the re-establishment of the U.S. nuclear industry: ensuring that the supply chain will be competitive on a global stage, enabling more cost-effective and reliable nuclear power in a carbon constrained environment. The NFC provided a forum for member original equipment manufactures (OEM), fabricators, manufacturers, and materials suppliers to effectively engage with each other and rebuild the capacity of this supply chain by : Identifying and removing impediments to the implementation of new construction and fabrication techniques and approaches for nuclear equipment, including system components and nuclear plants. Providing and facilitating detailed scientific-based studies on new approaches and technologies that will have positive impacts on the cost of building of nuclear plants. Analyzing and disseminating information about future nuclear fabrication technologies and how they could impact the North American and the International Nuclear Marketplace. Facilitating dialog and initiate alignment among fabricators, owners, trade associations, and government agencies. Supporting industry in helping to create a larger qualified nuclear supplier network. Acting as an unbiased technology resource to evaluate, develop, and demonstrate new manufacturing technologies. Creating welder and inspector training programs to help enable the necessary workforce for the upcoming construction work. Serving as a focal point for technology, policy, and politically interested parties to share ideas and concepts associated with fabrication across the nuclear industry. The report the objectives and summaries of the Nuclear Fabrication Consortium

  15. Fabrics with tunable oleophobicity

    OpenAIRE

    McKinley, Gareth H.; Choi, Wonjae; Cohen, Robert E.; Tuteja, Anish; Chhatre, Shreerang S.; Mabry, Joseph M.

    2009-01-01

    A simple “dip-coating” process that imbues oleophobicity to various surfaces that inherently possess re-entrant texture, such as commercially available fabrics, is reported. These dip-coated fabric surfaces exhibit reversible, deformation-dependent, tunable wettability, including the capacity to switch their surface wetting properties (between super-repellent and super-wetting) against a wide range of polar and nonpolar liquids.

  16. Modeling, fabrication and high power optical characterization of plasmonic waveguides

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Lysenko, Oleg

    2015-01-01

    This paper describes modeling, fabrication and high power optical characterization of thin gold films embedded in silicon dioxide. The propagation vector of surface plasmon polaritons has been calculated by the effective index method for the wavelength range of 750-1700 nm and film thickness of 1...

  17. Wafer scale coating of polymer cantilever fabricated by nanoimprint lithography

    DEFF Research Database (Denmark)

    Greve, Anders; Dohn, Søren; Keller, Stephan Urs

    2010-01-01

    Microcantilevers can be fabricated in TOPAS by nanoimprint lithography, with the dimensions of 500 ¿m length 4.5 ¿m thickness and 100 ¿m width. By using a plasma polymerization technique it is possible to selectively functionalize individually cantilevers with a polymer coating, on wafer scale...

  18. Fabrication of high-aspect ratio SU-8 micropillar arrays

    DEFF Research Database (Denmark)

    Amato, Letizia; Keller, Stephan S.; Heiskanen, Arto

    2012-01-01

    SU-8 is the preferred photoresist for development and fabrication of high aspect ratio (HAR) three dimensional patterns. However, processing of SU-8 is a challenging task, especially when the film thickness as well as the aspect ratio is increasing and the size of the features is close to the res...

  19. CdZnTe position-sensitive drift detectors with thicknesses up to 5 cm

    Science.gov (United States)

    Bolotnikov, A. E.; Camarda, G. S.; Chen, E.; Cheng, S.; Cui, Y.; Gul, R.; Gallagher, R.; Dedic, V.; De Geronimo, G.; Ocampo Giraldo, L.; Fried, J.; Hossain, A.; MacKenzie, J. M.; Sellin, P.; Taherion, S.; Vernon, E.; Yang, G.; El-hanany, U.; James, R. B.

    2016-02-01

    We investigated the feasibility of long-drift-time CdZnTe (CZT) gamma-ray detectors, fabricated from CZT material produced by Redlen Technologies. CZT crystals with cross-section areas of 5 × 5 mm2 and 6 × 6 mm2 and thicknesses of 20-, 30-, 40-, and 50-mm were configured as 3D position-sensitive drift detectors and were read out using a front-end ASIC. By correcting the electron charge losses caused by defects in the crystals, we demonstrated high performance for relatively thick detectors fabricated from unselected CZT material.

  20. CdZnTe position-sensitive drift detectors with thicknesses up to 5 cm

    OpenAIRE

    Bolotnikov, AE; Camarda, GS; Chen, E.; Cheng, S.; Cui, Y.; Gul, R; Gallagher, R; Dedic, V.; De Geronimo, G.; Giraldo, LO; Fried, J.; Hossain, A; MacKenzie, JM; Sellin, P.; Taherion, S

    2016-01-01

    We investigated the feasibility of long-drift-time CdZnTe (CZT) gamma-ray detectors, fabricated from CZT material produced by Redlen Technologies. CZT crystals with cross-section areas of 5 5 mm2 and 6 6 mm2 and thicknesses of 20-, 30-, 40-, and 50-mm were configured as 3D position-sensitive drift detectors and were read out using a front-end ASIC. By correcting the electron charge losses caused by defects in the crystals, we demonstrated high performance for relatively thick detectors fabric...

  1. Structural properties of Al{sub 2}O{sub 3}/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma

    Energy Technology Data Exchange (ETDEWEB)

    Dallaeva, D.S. [Dagestan State Technical University, av. I. Shamilya 70a, Machachkala, 367015 Dagestan Republic (Russian Federation); Dagestan State University, M. Gadgieva street, Machachkala, 367001 Dagestan Republic (Russian Federation); Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technicka 8, 616 00 Brno (Czech Republic); Bilalov, B.A.; Gitikchiev, M.A.; Kardashova, G.D.; Safaraliev, G.K. [Dagestan State Technical University, av. I. Shamilya 70a, Machachkala, 367015 Dagestan Republic (Russian Federation); Dagestan State University, M. Gadgieva street, Machachkala, 367001 Dagestan Republic (Russian Federation); Tomanek, P., E-mail: tomanek@feec.vutbr.cz [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technicka 8, 616 00 Brno (Czech Republic); Skarvada, P. [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technicka 8, 616 00 Brno (Czech Republic); Smith, S. [South Dakota School of Mines and Technology, Physics Department, 501 E. St. Joseph St, Rapid City, SD 57701 (United States)

    2012-12-30

    A process for ion-plasma formation of aluminum nitride (AlN) nanolayers on nitrided sapphire (Al{sub 2}O{sub 3}) substrates is presented. The method is based on the direct current magnetron sputtering of a high-purity aluminum target in the presence of an argon-nitrogen gas mix and high frequency-activated nitrogen plasma. The method, combined with ion etching, produced matched layers by nitration of Al{sub 2}O{sub 3} in the (0001) plane, and formation of high quality AlN epilayers on this surface was observed. The processing characteristics and morphology dependence on synthesis parameters were studied using atomic force microscopy. - Highlights: Black-Right-Pointing-Pointer Technology based on plasma processes was used. Black-Right-Pointing-Pointer Shemical composition of elements in the layers was analyzed. Black-Right-Pointing-Pointer Near-surface layer was obtained on the sapphire substrate by nitridation. Black-Right-Pointing-Pointer Increasing of substrate temperature stimulates the growth of layer perfection. Black-Right-Pointing-Pointer Morphology is connected with growth mechanism and the structure of substrate.

  2. AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I.-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

    2017-04-01

    We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias ( V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage ( V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

  3. AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties

    Science.gov (United States)

    Cappelli, E.; Trucchi, D. M.; Orlando, S.; Valentini, V.; Mezzi, A.; Kaciulis, S.

    2014-02-01

    Aluminium nitride thin films were deposited on n-Si substrates by RF plasma activated reactive pulsed laser deposition (PLD). An ArF excimer pulsed laser, 10 Hz and 2.5 J/cm2 energy fluence, has been used to ablate a pure Al target in a reactive atmosphere of N2 plasma (generated by a RF source), at varying processing parameters (substrate temperature, time, and N2 plasma configuration). We studied the dependence and correlation of structural and electronic properties with the experimental conditions. The chemical composition of deposited material has been determined by both Raman and X-ray photoelectron spectroscopy (XPS). Electrical resistivity has been evaluated by the sheet resistance method. Both spectroscopic characterizations (Raman and XPS) show a strong dependence in the formation of AlN on the deposition temperature. At low temperatures, there is little formation of nitride, with a prevalence of aluminium oxide, while at higher temperatures the N uptake increases, with AlN formation. Raman analysis also highlights the formation of nano-structures, for temperatures ≥400∘C. These material characteristics have a fundamental influence on the electronic properties. Indeed, electrical resistivity properties have been found to be strongly dependent on the film structure, nitrogen incorporation, and presence of mixed oxide compounds, closely related to deposition temperature.

  4. Engineered alternative skin for partial and full-thickness burns

    Science.gov (United States)

    Wessels, Quenton

    2014-01-01

    Engineered alternative skin in all its forms and shapes serve to provide temporary or permanent wound closure such as in the case of partial and full-thickness burns. The need for collagen-based regeneration templates is motivated by the fact that dermal regeneration of full-thickness injuries does not occur spontaneously and is inundated by contraction and scarring. Partial-thickness burns in turn can regress as a result of infection and improper treatment and require appropriate treatment. Nylon-silicone laminates such as Biobrane®, and more recently AWBAT®, address this by serving as a temporary barrier. Enhanced collagen-based scaffolds today, although not perfect, remain invaluable. Our initial approach was to characterize the design considerations and explore the use of collagen in the fabrication of a dermal regeneration matrix and a silicone-nylon bilaminate. Here we expand our initial research on scaffold fabrication and explore possible strategies to improve the outcome of collagen-scaffold medicated wound healing. PMID:24651001

  5. Engineered alternative skin for partial and full-thickness burns.

    Science.gov (United States)

    Wessels, Quenton

    2014-01-01

    Engineered alternative skin in all its forms and shapes serve to provide temporary or permanent wound closure such as in the case of partial and full-thickness burns. The need for collagen-based regeneration templates is motivated by the fact that dermal regeneration of full-thickness injuries does not occur spontaneously and is inundated by contraction and scarring. Partial-thickness burns in turn can regress as a result of infection and improper treatment and require appropriate treatment. Nylon-silicone laminates such as Biobrane(®), and more recently AWBAT(®), address this by serving as a temporary barrier. Enhanced collagen-based scaffolds today, although not perfect, remain invaluable. Our initial approach was to characterize the design considerations and explore the use of collagen in the fabrication of a dermal regeneration matrix and a silicone-nylon bilaminate. Here we expand our initial research on scaffold fabrication and explore possible strategies to improve the outcome of collagen-scaffold medicated wound healing.

  6. Influence of Laundering on the Quality of Sewn Cotton and Bamboo Woven Fabrics

    Directory of Open Access Journals (Sweden)

    Jurgita KOŽENIAUSKIENĖ

    2013-03-01

    Full Text Available In the presented study the effect of laundering on the quality of sewn cotton and bamboo plain woven fabrics was investigated considering both the textile parameters and the type of chemical treatment. Quality parameters of sewn cotton and bamboo woven fabrics such as: fabric strength, seam strength and seam slippage at the moment of 4 mm seam opening were evaluated before and after washing with “Tide” washing powder without softeners or with softeners: “Surcare” and “Pflege Weicspuler”. There was also determined surface density, warp and weft densities as well as thicknesses under the pressures 0.625 kPa and 3.125 kPa, and calculated the comparative thickness that was considered as softness or porosity of fabrics. Notwithstanding that both the investigated fabrics were cellulosic their behavior after laundering was different. Under the tested conditions, unwashed and laundered with or without chemical softeners cotton fabric didn’t demonstrate seam slippage. The seam slippage resistance of laundered without or with softener specimens of bamboo fabric was increased in respect to control fabric. The larger changes in seam efficiency and seam strength because of laundering were determined for bamboo woven fabric then for cotton fabric. They could be influenced by the higher changes in bamboo fabric’s structure. The highest difference between the structure parameters of both fabrics was determined for comparative thickness. It was significantly increased for cotton fabric and decreased for bamboo fabric after chemical softening comparing to untreated fabrics.DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3831

  7. Nano-fabricated superconducting radio-frequency composites, method for producing nano-fabricated superconducting rf composites

    Science.gov (United States)

    Norem, James H.; Pellin, Michael J.

    2013-06-11

    Superconducting rf is limited by a wide range of failure mechanisms inherent in the typical manufacture methods. This invention provides a method for fabricating superconducting rf structures comprising coating the structures with single atomic-layer thick films of alternating chemical composition. Also provided is a cavity defining the invented laminate structure.

  8. Electrophoretic deposition and constrained sintering of strontium titanate thick films

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, Luís; Vilarinho, Paula M., E-mail: paula.vilarinho@ua.pt; Senos, Ana M.R.

    2015-01-15

    Thick films of functional oxides are currently substituting counterparts bulk ceramics, as in the case of low loss dielectrics. For SrTiO{sub 3} (ST) based compositions it is demonstrated that electrophoretic deposition (EPD), using acetone as a suspension media with iodine addition, is a suitable technology to fabricate 12 μm thick films. The microstructural analysis of the films sintered at 1500 °C shows that highly densified microstructures can be obtained and, by slightly varying the Sr/Ti stoichiometry in the powder composition, increased densification and grain size and enlargement of the distribution with decreasing Sr/Ti ratio can be observed. In spite of the high densification of the films, it is also demonstrated that due to the constraint imposed by the substrate a smaller grain size is observed in thick films as compared to equivalent bulk ceramics. In addition, a preferential vertical pore orientation is observed in ST thick films. These results may have broad implications if one considers that the dielectric losses and dielectric tunability is affected by pore orientation, since it affects the electric field distribution. - Highlights: • Nonstoichiometry effect on microstructure of constrained sintered thick films and bulk is similar. • Increased densification and grain size and enlargement of distribution with decreasing Sr/Ti ratio. • Independent of Sr/Ti ratio smaller grain size for thick films compared to ceramics. • Preferential vertical pore orientation for constrained sintering of thick films. • Anisotropic porosity as tailoring factor to engineer permittivity and tunability.

  9. The Timoshenko-Reissner generalized model of a plate highly nonuniform in thickness

    Science.gov (United States)

    Morozov, N. F.; Tovstik, P. E.; Tovstik, T. P.

    2016-08-01

    A thin plate fabricated of material that is transversally isotropic and nonuniform in thickness is considered. The model of the monolayer transversally homogeneous isotropic plate, which is approximately equivalent to a thickness-nonuniform plate in the deflection and in the lowest frequencies of free vibrations, is constructed. The range of applicability of the model constructed is very wide. The main result of this study is a formula for calculating the transverse-shear rigidity of an equivalent transversally isotropic plate.

  10. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  11. Eddy current thickness measurement apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Rosen, Gary J.; Sinclair, Frank; Soskov, Alexander; Buff, James S.

    2015-06-16

    A sheet of a material is disposed in a melt of the material. The sheet is formed using a cooling plate in one instance. An exciting coil and sensing coil are positioned downstream of the cooling plate. The exciting coil and sensing coil use eddy currents to determine a thickness of the solid sheet on top of the melt.

  12. A damascene platform for controlled ultra-thin nanowire fabrication.

    Science.gov (United States)

    Guilmain, M; Labbaye, T; Dellenbach, F; Nauenheim, C; Drouin, D; Ecoffey, S

    2013-06-21

    This paper presents a damascene process for the fabrication of titanium micro/nanostructures and nanowires with adjustable thickness down to 2 nm. Their depth is precisely controlled by chemical-mechanical planarization together with in-process electrical characterization. The latter, in combination with a model of the titanium resistivity versus thickness, allows control of the metal line depth in the nanometer range. In summary, we have developed a planarization end point detection method for metal nanostructures. In addition, the model adopted covers geometrical influences like oxidation and ageing. The fabricated titanium nanowire test structures have a thickness ranging from 2 to 25 nm and a width ranging between 15 and 230 nm.

  13. Excellent Ballistic Impact Properties Demonstrated By New Fabric

    Science.gov (United States)

    Pereira, J. Michael; Revilock, Duane M.; Hopkins, Dale A.

    2002-01-01

    Recently, a relatively new industrial fiber known by the trade name Zylon has been under commercial development by Toyobo Co., Ltd., Japan. In ballistic impact tests conducted at the NASA Glenn Research Center, it was found that dry fabric braided of Zylon had greater ballistic impact capacity than comparable (braid style and weight) fabric braided of Kevlar. To study the potential use of Zylon fabric in jet engine containment systems, the fabric was tested in Glenn's Structures and Acoustics Division Ballistic Impact Facility under conditions simulating those which occur in a jet engine blade-out event. Circular ring test specimens were fabricated by wrapping five layers of braided Zylon or Kevlar fabric around an inner ring made of a thin sheet of aluminum and a 1-in.-thick layer of aluminum honeycomb. The test specimens had an inner diameter of 40 in., an axial length of 10 in., and a wall thickness of approximately 1.5in. A test specimen is shown in the photograph.

  14. Tube wall thickness measurement apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Lagasse, P.R.

    1987-01-06

    An apparatus is described for measuring the thickness of a tube's wall for the tube's entire length and circumference by determining the deviation of the tube wall thickness from the known thickness of a selected standard item, the apparatus comprising: a. a base; b. a first support member having first and second ends, the first end being connected to the base, the first support member having a sufficiently small circumference that the tube can be slid over the first support member; c. a spherical element, the spherical element being connected to the second end of the first support member. The spherical element has a sufficiently small circumference at its equator that the tube can be slid over the spherical element, the spherical element having at its equator a larger circumference than the first support member; d. a second support member having first and second ends, the first end being connected to the base, the second support member being spaced apart form the first support member; e. a positioning element connected to and moveable relative to the second support member; and f. an indicator connected to the positioning element and being moveable thereby to a location proximate the spherical element. The indicator includes a contact ball for contacting the selected standard item and holding it against the spherical element, the contact ball contacting the tube when the tube is disposed about the spherical element. The indicator includes a dial having a rotatable needle for indicating the deviation of the tube wall thickness from the thickness of the selected standard item, the rotatable needle being operatively connected to and responsive to the position of the contact ball.

  15. Fabrication and properties of multiferroic nanocomposite films

    KAUST Repository

    Al-Nassar, Mohammed Y.

    2015-01-01

    A new type of multiferroic polymer nanocomposite is presented, which exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of a ferroelectric copolymer poly(vinylindene fluoride-trifluoroethylene) [P(VDF-TrFE)] and high aspect ratio ferromagnetic nickel (Ni) nanowires (NWs), which were grown inside anodic aluminum oxide membranes. The fabrication of nanocomposite films with Ni NWs embedded in P(VDF-TrFE) has been successfully carried out via a simple low-temperature spin-coating technique. Structural, ferromagnetic, and ferroelectric properties of the developed nanocomposite have been investigated. The remanent and saturation polarization as well as the coercive field of the ferroelectric phase are slightly affected by the incorporation of the NWs as well as the thickness of the films. While the former two decrease, the last increases by adding the NWs or increasing the thickness. The ferromagnetic properties of the nanocomposite films are found to be isotropic.

  16. Fabrication of PDMS architecture

    Science.gov (United States)

    Adam, Tijjani; Hashim, U.

    2017-03-01

    The study report novel, yet simple and flexible fabrication method for micro channel patterning PDMS thin mold on glass surfaces, the method allows microstructures with critical dimensions to be formed using PDMS. Micro channel production is a two-step process. First, soft photolithography methods are implemented to fabricate a reusable mold. The mold is then used to create the micro channel, which consists of SU8, PDMS and glass. The micro channel design was performed using AutoCAD and the fabrication begins by creating a replicable mold. The mold is created on a glass slide. by spin-coating speed between 500 to 1250rpm with an acceleration of 100 rpm/s for 100 and 15 second ramp up and down speed respectively. Channel flow rate based on concentration were measured by analyzing the recorded flow profiles which was collected from the high powered microscope at. 80µ, 70µm, 50µm for inlet channel 1, 2, 3 respectively the channel flow were compared for flow efficiency at different concentrations and Re. Thus, the simplicity of device structure and fabrication makes it feasible to miniaturize it for the development of point-of-care kits, facilitating its use in both clinical and non-clinical environments. With its simple geometric structure and potential for mass commercial fabrication, the device can be developed to become a portable photo detection sensor that can be use for both environmental and diagnostic application.

  17. Assessment of Nuclear Fuels using Radiographic Thickness Measurement Method

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad Abir; Fahima Islam; Hyoung Koo Lee; Daniel Wachs

    2014-11-01

    The Convert branch of the National Nuclear Security Administration (NNSA) Global Threat Reduction Initiative (GTRI) focuses on the development of high uranium density fuels for research and test reactors for nonproliferation. This fuel is aimed to convert low density high enriched uranium (HEU) based fuel to high density low enriched uranium (LEU) based fuel for high performance research reactors (HPRR). There are five U.S. reactors that fall under the HPRR category, including: the Massachusetts Institute of Technology Reactor (MITR), the National Bureau of Standards Reactor (NBSR), the Missouri University Research Reactor (UMRR), the Advanced Test Reactor (ATR), and the High Flux Isotope Reactor (HFIR). U-Mo alloy fuel phase in the form of either monolithic or dispersion foil type fuels, such as ATR Full-size In center flux trap Position (AFIP) and Reduced Enrichment for Research and Test Reactor (RERTR), are being designed for this purpose. The fabrication process1 of RERTR is susceptible to introducing a variety of fuel defects. A dependable quality control method is required during fabrication of RERTR miniplates to maintain the allowable design tolerances, therefore evaluating and analytically verifying the fabricated miniplates for maintaining quality standards as well as safety. The purpose of this work is to analyze the thickness of the fabricated RERTR-12 miniplates using non-destructive technique to meet the fuel plate specification for RERTR fuel to be used in the ATR.

  18. Understanding core conductor fabrics

    Energy Technology Data Exchange (ETDEWEB)

    Swenson, D E, E-mail: deswenson@affinity-esd.com [Affinity Static Control Consulting, LLC 2609 Quanah Drive, Round Rock, Texas, 78681 (United States)

    2011-06-23

    ESD Association standard test method ANSI/ESD STM2.1 - Garments (STM2.1), provides electrical resistance test procedures that are applicable for materials and garments that have surface conductive or surface dissipative properties. As has been reported in other papers over the past several years{sup 1} fabrics are now used in many industries for electrostatic control purposes that do not have surface conductive properties and therefore cannot be evaluated using the procedures in STM2.1{sup 2}. A study was conducted to compare surface conductive fabrics with samples of core conductor fibre based fabrics in order to determine differences and similarities with regards to various electrostatic properties. This work will be used to establish a new work item proposal within WG-2, Garments, in the ESD Association Standards Committee in the USA.

  19. Tensile test of dumbbell-shaped specimen in thickness direction

    Science.gov (United States)

    Iizuka, Takashi

    2016-10-01

    Sheet metal forming is widely used in manufacturing shops, and evaluation of forming limit for sheet metal is important. However, specimen shape influences on the fracture of the sheet metal. As one of methods to decrease these effects, an uniaxial tensile test using specimen dumbbell-shaped in thickness direction had been examined using FEM analysis. In this study, actually specimen dumbbell-shaped in thickness direction was fabricated using a new incremental sheet forging method, and uniaxial tensile test was conducted. Load-stroke diagram, fracture morphologies, stress-strain curves and shape after fracture were investigated, and effects of specimen shape were considered. Elongation was larger as using specimen dumbbell-shaped in the width direction. Stress-strain curves until necking occurred were less influenced by specimen shape. However, yield stress decreased and local elongation increased as using specimen dumbbell-shaped in the width direction. The reasons why these tendencies showed were considered in the view of specimen shapes.

  20. 溅射Al对AlN的“润湿”与钎焊∗%“Wetting” and brazing of AlN by sputtered Al

    Institute of Scientific and Technical Information of China (English)

    赵博文; 尚海龙; 陈凡; 石恺成; 李荣斌; 李戈扬

    2016-01-01

    The wettabilities of molten metals on ceramics are poor normally. In order to improve the wettability, all existing ceramic brazing methods introduce a compound transition layer that is formed by the reaction of active metal and ceramic. The transition layer between brazing seam and ceramic however creates negative effect on the properties of brazing joints. This paper reports our study of the“wetting”effect of sputtered Al particles on AlN, which enables the direct brazing of AlN using deposited Al-based films as fillers, thereby eliminating the need of a transition layer. The results show that under the bombardment of energetic sputtered Al particles, Al-N chemical bonding is formed at the interface between Al film and AlN, which typically requires temperatures above 850 ◦C, much higher than the melting point of Al. The bonding remained intact even after the Al film has been melted, achieving the“wetting”effect on AlN. As a result, the direct brazing of AlN without the need of a transition layer becomes feasible. The shear strength of Al/AlN joint using this process reaches 104 MPa. The addition of 3.8 at.%Cu to film fillers increases the shear strength to 165 MPa. The fracture is generated in metallic brazing seam in both cases. When Cu content increases to 9.1 at.%, the segregation of Cu at the interface between the brazing seam and the ceramic reduces the shear strength of the joint to 95 MPa. With Al-20 at.%Ge, the brazing temperature can be lowered to 510 ◦C, although the segregation of Ge at interface results in a low shear strength of 48 MPa. Instead of the traditional use of molten metals, utilization of the metallic vapor particles to bombard AlN achieves the “wetting” and the direct brazing of ceramics, with no negative effect of transition layers. This breakthrough method provides a brand new perspective to the technique of ceramic brazing.%由于润湿性不佳,难以实现金属钎料对陶瓷的无过渡层直接钎焊,本文在研

  1. An evaluation of UV protection imparted by cotton fabrics dyed with natural colorants

    Directory of Open Access Journals (Sweden)

    Sarkar Ajoy K

    2004-10-01

    Full Text Available Abstract Background The ultraviolet properties of textiles dyed with synthetic dyes have been widely reported in literature. However, no study has investigated the ultraviolet properties of natural fabrics dyed with natural colorants. This study reports the Ultraviolet Protection Factor (UPF of cotton fabrics dyed with colorants of plant and insect origins. Methods Three cotton fabrics were dyed with three natural colorants. Fabrics were characterized with respect to fabric construction, weight, thickness and thread count. Influence of fabric characteristics on Ultraviolet Protection Factor was studied. Role of colorant concentration on the ultraviolet protection factor was examined via color strength analysis. Results A positive correlation was observed between the weight of the fabric and their UPF values. Similarly, thicker fabrics offered more protection from ultraviolet rays. Thread count appears to negatively correlate with UPF. Dyeing with natural colorants dramatically increased the protective abilities of all three fabric constructions. Additionally, within the same fabric type UPF values increased with higher depths of shade. Conclusion Dyeing cotton fabrics with natural colorants increases the ultraviolet protective abilities of the fabrics and can be considered as an effective protection against ultraviolet rays. The UPF is further enhanced with colorant of dark hues and with high concentration of the colorant in the fabric.

  2. Effect of glass thickness variation on the performance of RPC detectors

    CERN Document Server

    Sadiq, Jafar; Behera, Prafulla Kumar

    2016-01-01

    The India-based Neutrino Observatory(INO) is planning to build a magnetized iron calorimeter detector (ICAL) in which Resistive Plate Chambers(RPCs) will be the active detector elements. Study of the performance of RPC detectors of varying glass thickness is pivotal in optimizing the design parameters of the ICAL RPCs. We fabricated RPCs with glasses of varying thickness and studied their performance in the same ambient conditions. The study of detector efficiency, noise rate, time resolution and charge resolution is presented in this paper. We have observed that the knee voltage of the RPC varies with the thickness of the glass electrode.

  3. Accurate thickness measurement of graphene

    Science.gov (United States)

    Shearer, Cameron J.; Slattery, Ashley D.; Stapleton, Andrew J.; Shapter, Joseph G.; Gibson, Christopher T.

    2016-03-01

    Graphene has emerged as a material with a vast variety of applications. The electronic, optical and mechanical properties of graphene are strongly influenced by the number of layers present in a sample. As a result, the dimensional characterization of graphene films is crucial, especially with the continued development of new synthesis methods and applications. A number of techniques exist to determine the thickness of graphene films including optical contrast, Raman scattering and scanning probe microscopy techniques. Atomic force microscopy (AFM), in particular, is used extensively since it provides three-dimensional images that enable the measurement of the lateral dimensions of graphene films as well as the thickness, and by extension the number of layers present. However, in the literature AFM has proven to be inaccurate with a wide range of measured values for single layer graphene thickness reported (between 0.4 and 1.7 nm). This discrepancy has been attributed to tip-surface interactions, image feedback settings and surface chemistry. In this work, we use standard and carbon nanotube modified AFM probes and a relatively new AFM imaging mode known as PeakForce tapping mode to establish a protocol that will allow users to accurately determine the thickness of graphene films. In particular, the error in measuring the first layer is reduced from 0.1-1.3 nm to 0.1-0.3 nm. Furthermore, in the process we establish that the graphene-substrate adsorbate layer and imaging force, in particular the pressure the tip exerts on the surface, are crucial components in the accurate measurement of graphene using AFM. These findings can be applied to other 2D materials.

  4. Minimum thickness anterior porcelain restorations.

    Science.gov (United States)

    Radz, Gary M

    2011-04-01

    Porcelain laminate veneers (PLVs) provide the dentist and the patient with an opportunity to enhance the patient's smile in a minimally to virtually noninvasive manner. Today's PLV demonstrates excellent clinical performance and as materials and techniques have evolved, the PLV has become one of the most predictable, most esthetic, and least invasive modalities of treatment. This article explores the latest porcelain materials and their use in minimum thickness restoration.

  5. Accurate thickness measurement of graphene.

    Science.gov (United States)

    Shearer, Cameron J; Slattery, Ashley D; Stapleton, Andrew J; Shapter, Joseph G; Gibson, Christopher T

    2016-03-29

    Graphene has emerged as a material with a vast variety of applications. The electronic, optical and mechanical properties of graphene are strongly influenced by the number of layers present in a sample. As a result, the dimensional characterization of graphene films is crucial, especially with the continued development of new synthesis methods and applications. A number of techniques exist to determine the thickness of graphene films including optical contrast, Raman scattering and scanning probe microscopy techniques. Atomic force microscopy (AFM), in particular, is used extensively since it provides three-dimensional images that enable the measurement of the lateral dimensions of graphene films as well as the thickness, and by extension the number of layers present. However, in the literature AFM has proven to be inaccurate with a wide range of measured values for single layer graphene thickness reported (between 0.4 and 1.7 nm). This discrepancy has been attributed to tip-surface interactions, image feedback settings and surface chemistry. In this work, we use standard and carbon nanotube modified AFM probes and a relatively new AFM imaging mode known as PeakForce tapping mode to establish a protocol that will allow users to accurately determine the thickness of graphene films. In particular, the error in measuring the first layer is reduced from 0.1-1.3 nm to 0.1-0.3 nm. Furthermore, in the process we establish that the graphene-substrate adsorbate layer and imaging force, in particular the pressure the tip exerts on the surface, are crucial components in the accurate measurement of graphene using AFM. These findings can be applied to other 2D materials.

  6. Methods and devices for fabricating three-dimensional nanoscale structures

    Science.gov (United States)

    Rogers, John A.; Jeon, Seokwoo; Park, Jangung

    2010-04-27

    The present invention provides methods and devices for fabricating 3D structures and patterns of 3D structures on substrate surfaces, including symmetrical and asymmetrical patterns of 3D structures. Methods of the present invention provide a means of fabricating 3D structures having accurately selected physical dimensions, including lateral and vertical dimensions ranging from 10s of nanometers to 1000s of nanometers. In one aspect, methods are provided using a mask element comprising a conformable, elastomeric phase mask capable of establishing conformal contact with a radiation sensitive material undergoing photoprocessing. In another aspect, the temporal and/or spatial coherence of electromagnetic radiation using for photoprocessing is selected to fabricate complex structures having nanoscale features that do not extend entirely through the thickness of the structure fabricated.

  7. Method for the production of fabricated hollow microspheroids

    Energy Technology Data Exchange (ETDEWEB)

    Wickramanayake, Shan; Luebke, David R.

    2015-06-09

    The method relates to the fabrication of a polymer microspheres comprised of an asymmetric layer surrounding a hollow interior. The fabricated hollow microsphere is generated from a nascent hollow microsphere comprised of an inner core of core fluid surrounded by a dope layer of polymer dope, where the thickness of the dope layer is at least 10% and less than 50% of the diameter of the inner core. The nascent hollow microsphere is exposed to a gaseous environment, generating a vitrified hollow microsphere, which is subsequently immersed in a coagulation bath. Solvent exchange produces a fabricated hollow microsphere comprised of a densified outer skin surrounding a macroporous inner layer, which surrounds a hollow interior. In an embodiment, the polymer is a polyimide or a polyamide-imide, and the non-solvent in the core fluid and the coagulation bath is water. The fabricated hollow microspheres are particularly suited as solvent supports for gas separation processes.

  8. In-situ NC-AFM measurements of high quality AlN(0001 layers grown at low growth rate on 4H-SiC(0001 and Si(111 substrates using ammonia molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Florian Chaumeton

    2015-06-01

    Full Text Available Nitride wide-band-gap semiconductors are used to make high power electronic devices or efficient light sources. The performance of GaN-based devices is directly linked to the initial AlN buffer layer. During the last twenty years of research on nitride growth, only few information on the AlN surface quality have been obtained, mainly by ex-situ characterization techniques. Thanks to a Non Contact Atomic Force Microscope (NC-AFM connected under ultra high vacuum (UHV to a dedicated molecular beam epitaxy (MBE chamber, the surface of AlN(0001 thin films grown on Si(111 and 4H-SiC(0001 substrates has been characterized. These experiments give access to a quantitative determination of the density of screw and edge dislocations at the surface. The layers were also characterized by ex-situ SEM to observe the largest defects such as relaxation dislocations and hillocks. The influence of the growth parameters (substrate temperature, growth speed, III/V ratio and of the initial substrate preparation on the dislocation density was also investigated. On Si(111, the large in-plane lattice mismatch with AlN(0001 (19% induces a high dislocation density ranging from 6 to 12×1010/cm2 depending on the growth conditions. On 4H-SiC(0001 (1% mismatch with AlN(0001, the dislocation density decreases to less than 1010/cm2, but hillocks appear, depending on the initial SiC(0001 reconstruction. The use of a very low growth rate of 10 nm/h at the beginning of the growth process allows to decrease the dislocation density below 2 × 109/cm2.

  9. Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Claudel, A., E-mail: arnaud.claudel@grenoble-inp.org [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Fellmann, V. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Gélard, I. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Coudurier, N. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Sauvage, D. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Balaji, M. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Crystal Growth Center, Anna University, Chennai 600025 (India); and others

    2014-12-31

    Thin (0001) epitaxial aluminum nitride (AlN) layers were grown on c-plane sapphire using high temperature hydride vapor phase epitaxy. The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure in which the reactions take place on a susceptor heated by induction. The reactants used are ammonia and aluminum chlorides in situ formed via hydrogen chloride reaction with high purity aluminum pellets. As-grown AlN layers have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, transmission electron microscopy, photoluminescence and Raman spectroscopies. The influence of the V/III ratio in the gas phase, from 1.5 to 15, on growth rate, surface morphology, roughness and crystalline quality is investigated in order to increase the quality of thin epitaxial AlN layers grown at high temperature. Typical growth rates of around 0.45 μm/h were obtained for such thin epitaxial AlN layers. The growth rate was unaffected by the V/III ratio. An optimum for roughness, crystalline quality and optical properties seems to exist at V/III = 7.5. As a matter of fact, for a V/III ratio of 7.5, best root mean square roughness and crystalline quality — measured on 0002 symmetric reflection — as low as 6.9 nm and 898 arcsec were obtained, respectively. - Highlights: • Growth of thin epitaxial AlN layers by high temperature hydride vapor phase epitaxy • Influence of V/III ratio on growth rate, morphology and crystalline quality • The effect of surface morphology on strain state and crystal quality is established.

  10. Soliton models for thick branes

    Energy Technology Data Exchange (ETDEWEB)

    Peyravi, Marzieh [Ferdowsi University of Mashhad, Department of Physics, School of Sciences, Mashhad (Iran, Islamic Republic of); Riazi, Nematollah [Shahid Beheshti University, Physics Department, Tehran (Iran, Islamic Republic of); Lobo, Francisco S.N. [Faculdade de Ciencias da Universidade de Lisboa, Instituto de Astrofisica e Ciencias do Espaco, Lisbon (Portugal)

    2016-05-15

    In this work, we present new soliton solutions for thick branes in 4+1 dimensions. In particular, we consider brane models based on the sine-Gordon (SG), φ{sup 4} and φ{sup 6} scalar fields, which have broken Z{sub 2} symmetry in some cases and are responsible for supporting and stabilizing the thick branes. The origin of the symmetry breaking in these models resides in the fact that the modified scalar field potential may have non-degenerate vacua. These vacua determine the cosmological constant on both sides of the brane. We also study the geodesic equations along the fifth dimension, in order to explore the particle motion in the neighborhood of the brane. Furthermore, we examine the stability of the thick branes, by determining the sign of the w{sup 2} term in the expansion of the potential for the resulting Schroedinger-like equation, where w is the five-dimensional coordinate. It turns out that the φ{sup 4} brane is stable, while there are unstable modes for certain ranges of the model parameters in the SG and φ{sup 6} branes. (orig.)

  11. Development of a templated approach to fabricate diamond patterns on various substrates.

    Science.gov (United States)

    Shimoni, Olga; Cervenka, Jiri; Karle, Timothy J; Fox, Kate; Gibson, Brant C; Tomljenovic-Hanic, Snjezana; Greentree, Andrew D; Prawer, Steven

    2014-06-11

    We demonstrate a robust templated approach to pattern thin films of chemical vapor deposited nanocrystalline diamond grown from monodispersed nanodiamond (mdND) seeds. The method works on a range of substrates, and we herein demonstrate the method using silicon, aluminum nitride (AlN), and sapphire substrates. Patterns are defined using photo- and e-beam lithography, which are seeded with mdND colloids and subsequently introduced into microwave assisted chemical vapor deposition reactor to grow patterned nanocrystalline diamond films. In this study, we investigate various factors that affect the selective seeding of different substrates to create high quality diamond thin films, including mdND surface termination, zeta potential, surface treatment, and plasma cleaning. Although the electrostatic interaction between mdND colloids and substrates is the main process driving adherence, we found that chemical reaction (esterification) or hydrogen bonding can potentially dominate the seeding process. Leveraging the knowledge on these different interactions, we optimize fabrication protocols to eliminate unwanted diamond nucleation outside the patterned areas. Furthermore, we have achieved the deposition of patterned diamond films and arrays over a range of feature sizes. This study contributes to a comprehensive understanding of the mdND-substrate interaction that will enable the fabrication of integrated nanocrystalline diamond thin films for microelectronics, sensors, and tissue culturing applications.

  12. Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

    Directory of Open Access Journals (Sweden)

    Massimiliano Lucci

    2017-03-01

    Full Text Available We studied the growth and oxidation of niobium nitride (NbN films that we used to fabricate superconductive tunnel junctions. The thin films were deposited by dc reactive magnetron sputtering using a mixture of argon and nitrogen. The process parameters were optimized by monitoring the plasma with an optical spectroscopy technique. This technique allowed us to obtain NbN as well as good quality AlN films and both were used to obtain NbN/AlN/NbN trilayers. Lift-off lithography and selective anodization of the NbN films were used, respectively, to define the main trilayer geometry and/or to separate electrically, different areas of the trilayers. The anodized films were characterized by using Auger spectroscopy to analyze compounds formed on the surface and by means of a nano-indenter in order to investigate its mechanical and adhesion properties. The transport properties of NbN/AlN/NbN Josephson junctions obtained as a result of the above described fabrication process were measured in liquid helium at 4.2 K.

  13. Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-02-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

  14. SILICON COMPATIBLE ACOUSTIC WAVE RESONATORS: DESIGN, FABRICATION AND PERFORMANCE

    Directory of Open Access Journals (Sweden)

    Aliza Aini Md Ralib

    2014-12-01

    Full Text Available ABSTRACT: Continuous advancement in wireless technology and silicon microfabrication has fueled exciting growth in wireless products. The bulky size of discrete vibrating mechanical devices such as quartz crystals and surface acoustic wave resonators impedes the ultimate miniaturization of single-chip transceivers. Fabrication of acoustic wave resonators on silicon allows complete integration of a resonator with its accompanying circuitry.  Integration leads to enhanced performance, better functionality with reduced cost at large volume production. This paper compiles the state-of-the-art technology of silicon compatible acoustic resonators, which can be integrated with interface circuitry. Typical acoustic wave resonators are surface acoustic wave (SAW and bulk acoustic wave (BAW resonators.  Performance of the resonator is measured in terms of quality factor, resonance frequency and insertion loss. Selection of appropriate piezoelectric material is significant to ensure sufficient electromechanical coupling coefficient is produced to reduce the insertion loss. The insulating passive SiO2 layer acts as a low loss material and aims to increase the quality factor and temperature stability of the design. The integration technique also is influenced by the fabrication process and packaging.  Packageless structure using AlN as the additional isolation layer is proposed to protect the SAW device from the environment for high reliability. Advancement in miniaturization technology of silicon compatible acoustic wave resonators to realize a single chip transceiver system is still needed. ABSTRAK: Kemajuan yang berterusan dalam teknologi tanpa wayar dan silikon telah menguatkan pertumbuhan yang menarik dalam produk tanpa wayar. Saiz yang besar bagi peralatan mekanikal bergetar seperti kristal kuarza menghalang pengecilan untuk merealisasikan peranti cip. Silikon serasi  gelombang akustik resonator mempunyai potensi yang besar untuk menggantikan unsur

  15. Fabrication activity for nanophotonics

    DEFF Research Database (Denmark)

    Malureanu, Radu; Chung, Il-Sug; Carletti, Luca

    We present the fabrication and characterization of new structures and materials to be used in nanophotonics. The first structure presented is a fractal metallic metasurface designed to be used as a high-sensitivity sensor for 810nm wavelength. A second structure is a high index contrast grating...

  16. Crimp-Imbalanced Fabrics

    Science.gov (United States)

    2011-03-30

    tows (non-twisted yarns) of alternative cross-sections. Many ballistic fabrics employ non-circular cross-section yarns such as rectangular...coating. The temporary coatings can be wax (paraffin), latex (vinyl acetate , butadiene 27 and acrylic monomers), plastic (poly vinyl chloride

  17. Text-Fabric

    NARCIS (Netherlands)

    Roorda, Dirk

    2016-01-01

    Text-Fabric is a Python3 package for Text plus Annotations. It provides a data model, a text file format, and a binary format for (ancient) text plus (linguistic) annotations. The emphasis of this all is on: data processing; sharing data; and contributing modules. A defining characteristic is that T

  18. Weaving multi-layer fabrics for reinforcement of engineering components

    Science.gov (United States)

    Hill, B. J.; Mcilhagger, R.; Mclaughlin, P.

    1993-01-01

    The performance of interlinked, multi-layer fabrics and near net shape preforms for engineering applications, woven on a 48 shaft dobby loom using glass, aramid, and carbon continuous filament yarns is assessed. The interlinking was formed using the warp yarns. Two basic types of structure were used. The first used a single warp beam and hence each of the warp yarns followed a similar path to form four layer interlinked reinforcements and preforms. In the second two warp beams were used, one for the interlinking yarns which pass from the top to the bottom layer through-the-thickness of the fabric and vice versa, and the other to provide 'straight' yarns in the body of the structure to carry the axial loading. Fabrics up to 15mm in thickness were constructed with varying amounts of through-the-thickness reinforcement. Tapered T and I sections were also woven, with the shaping produced by progressive removal of ends during construction. These fabrics and preforms were impregnated with resin and cured to form composite samples for testing. Using these two basic types of construction, the influence of reinforcement construction and the proportion and type of interlinking yarn on the performance of the composite was assessed.

  19. Dyeing fabrics with metals

    Science.gov (United States)

    Kalivas, Georgia

    2002-06-01

    Traditionally, in textile dyeing, metals have been used as mordants or to improve the color produced by a natural or synthetic dye. In biomedical research and clinical diagnostics gold colloids are used as sensitive signals to detect the presence of pathogens. It has been observed that when metals are finely divided, a distinct color may result that is different from the color of the metal in bulk. For example, when gold is finely divided it may appear black, ruby or purple. This can be seen in biomedical research when gold colloids are reduced to micro-particles. Bright color signals are produced by few nanometer-sized particles. Dr. William Todd, a researcher in the Department of Veterinary Science at the Louisiana State University, developed a method of dyeing fabrics with metals. By using a reagent to bond the metal particles deep into the textile fibers and actually making the metal a part of the chemistry of the fiber. The chemicals of the fabric influence the resulting color. The combination of the element itself, the size of the particle, the chemical nature of the particle and the interaction of the metal with the chemistry of the fabric determine the actual hue. By using different elements, reagents, textiles and solvents a broad range of reproducible colors and tones can be created. Metals can also be combined into alloys, which will produce a variety of colors. The students of the ISCC chapter at the Fashion Institute of Technology dyed fabric using Dr. Todd's method and created a presentation of the results. They also did a demonstration of dyeing fabrics with metals.

  20. Inductive antenna stent: design, fabrication and characterization

    Science.gov (United States)

    Rashidi Mohammadi, Abdolreza; Ali, Mohamed Sultan Mohamed; Lappin, Derry; Schlosser, Colin; Takahata, Kenichi

    2013-02-01

    This paper describes the design, fabrication, and electromechanical characteristics of inductive stents developed for intelligent stent applications. The stents, fabricated out of 316L stainless-steel tubes using laser machining, are patterned to have zigzag loops without bridge struts, and when expanded, become a helix-like structure. Highly conductive metals such as copper and gold are coated on the stents to improve their inductive/antenna function. The Q-factor of the stent is shown to increase by a factor of 7 at 150 MHz with copper coating. The expansion of the stent from 2 to 4 mm diameter results in a 3.2× increase in the inductance, obtaining ˜1 µH at a similar frequency. The stent passivated by Parylene-C film is used to characterize its resonance in different media including saline. The copper-coated inductive stent exhibits a 2.4× radial stiffness for 1 mm strain as well as a 16× bending compliance compared with a commercial stent, each of which is potentially beneficial in preventing/mitigating stent failures such as recoil as well as enabling easier navigation through intricate blood vessels. The mechanical stiffness may be tailored by adjusting stent-wire thickness while maintaining necessary coating thickness to achieve particular mechanical requirements and high inductive performance simultaneously.