Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

Embedding and electropolymerization of terthiophene derivatives in porous n-type silicon

Energy Technology Data Exchange (ETDEWEB)

Badeva, Diyana, E-mail: diyana.badeva@cnrs-imn.fr [Equipe Physique des Materiaux et Nanostructures, IMN, B.P. 32229, 44322 Nantes cedex 3 (France); Tran-Van, Francois, E-mail: francois.tran@univ-tours.fr [Laboratoire de Physico-Chimie des Materiaux et des Electrolytes pour l' Energie (PCM2E), E.A 6299, Universite de Tours, Faculte des Sciences et Techniques, Parc de Grandmont, 37200 Tours (France); Beouch, Layla, E-mail: layla.beouch@u-cergy.fr [Laboratoire de Physicochimie des Polymeres et des Interfaces, 5, mail Gay-Lussac, F-95031 Cergy-Pontoise Cedex (France); Chevrot, Claude, E-mail: claude.chevrot@u-cergy.fr [Laboratoire de Physicochimie des Polymeres et des Interfaces, 5, mail Gay-Lussac, F-95031 Cergy-Pontoise Cedex (France); Markova, Ivania, E-mail: vania@uctm.edu [Laboratory of Nanomaterials and Nanotechnologies, University of Chemical Technology and Metallurgy, 8 St. Kliment Ohridski blvd., 1756 Sofia (Bulgaria); Racheva, Todora, E-mail: todora@uctm.edu [Laboratory of Nanomaterials and Nanotechnologies, University of Chemical Technology and Metallurgy, 8 St. Kliment Ohridski blvd., 1756 Sofia (Bulgaria); Froyer, Gerard, E-mail: gerard.froyer@cnrs-imn.fr [Equipe Physique des Materiaux et Nanostructures, IMN, B.P. 32229, 44322 Nantes cedex 3 (France)

2012-04-16

Highlights: Black-Right-Pointing-Pointer Development of a mesoporous silicon with special morphological and chemical properties. Black-Right-Pointing-Pointer Successful embedding of carboxylic-acid terthiophenic monomer in porous silicon. Black-Right-Pointing-Pointer In situ electrochemical polymerization. Black-Right-Pointing-Pointer Polarized IRTF scattering provides the tendency to preferential organization. - Abstract: A mesoporous n-type silicon/poly (3 Prime -acetic acid-2,2 Prime -5 Prime ,2 Prime Prime terthiophene)-(Poly (3TAA) nanocomposite was elaborated in order to realize new components for optoelectronics. Non-oxidized and oxidized porous silicon substrates is used and their physical and chemical properties have been studied by different techniques such as transmission electron microscopy (TEM), scanning electron microscopy (SEM) and Fourier transformed infrared spectroscopy (FTIR). Terthiophene based conjugated structure has been successfully incorporated inside the pores by capillarity at the melting temperature of the monomer. The filling of the monomer into the porous volume was probed by energy dispersive X-ray spectroscopy (EDX). Polarized infrared absorption spectroscopy results indicated that the monomer molecules show preferential orientation along the pore axis, due to hydrogen bonding, in particular that of the carboxylic groups with silanol-rich oxidized porous silicon surface. The 3TAA monomer molecules embedded in porous silicon matrix were electrochemically polymerized in situ and resonance Raman scattering spectroscopy proved the above-mentioned polymerization.

Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems

International Nuclear Information System (INIS)

Chen, W.; De Geronimo, G.; Carini, G.A.; Gaskin, J.A.; Keister, J.W.; Li, S.; Li, Z.; Ramsey, B.D.; Siddons, D.P.; Smith, G.C.; Verbitskaya, E.

2011-01-01

We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

International Nuclear Information System (INIS)

Tokuda, Yutaka; Shimada, Hitoshi

1998-01-01

Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

Porosity dependence of positive magnetoconductance in n-type porous silicon

Energy Technology Data Exchange (ETDEWEB)

Chouaibi, Bassem; Radaoui, Moufid; Benfredj, Amel; Bouchriha, Habib [Laboratoire Materiaux Avances et Phenomenes Quantiques, Faculte des Sciences de Tunis, Universite El Manar, 2092 Campus universitaire, Tunis (Tunisia); Romdhane, Samir [Laboratoire Materiaux Avances et Phenomenes Quantiques, Faculte des Sciences de Tunis, Universite El Manar, 2092 Campus universitaire, Tunis (Tunisia); Faculte des Sciences de Bizerte, 7021 Zarzouna, Bizerte, Universite de Carthage (Tunisia); Bouaicha, Mongi [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

2012-10-15

Positive magnetoconductance (MC) on n-type porous silicon (PS) based devices was observed at room temperature for low static magnetic field (under 6000 G). We found that the measured MC decreases when the film porosity is increased. Obtained results were analyzed by means of the quasi-1D weak localization (WL) theory. From the dependence of the MC vs. applied magnetic field, we determine the phase coherence length L{sup {phi}}. Good agreement between theoretical and experimental results was found (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Low-temperature radiation damage in silicon - 1: Annealing studies on N-type material

International Nuclear Information System (INIS)

Awadelkarim, O.O.

1986-07-01

The presence of electrically active defects in electron-irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures c - 0.14) eV and (E c - 0.24) eV in the gap are ascribed to the carbon interstitial and the divacancy, respectively. (author)

Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor.

Science.gov (United States)

Ho, Hai Quan; Honda, Yuki; Motoyama, Mizuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

2018-05-01

The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40t/EFPY of 10Ωcm resistivity Si-particles for fabrication of the n-type spherical solar cell. Copyright © 2018 Elsevier Ltd. All rights reserved.

Intrinsic and extrinsic spin Hall effects of Dirac electrons

International Nuclear Information System (INIS)

Fukazawa, Takaaki; Kohno, Hiroshi; Fujimoto, Junji

2017-01-01

We investigate the spin Hall effect (SHE) of electrons described by the Dirac equation, which is used as an effective model near the L-points in bismuth. By considering short-range nonmagnetic impurities, we calculate the extrinsic as well as intrinsic contributions on an equal footing. The vertex corrections are taken into account within the ladder type and the so-called skew-scattering type. The intrinsic SHE which we obtain is consistent with that of Fuseya et al. It is found that the extrinsic contribution dominates the intrinsic one when the system is metallic. The extrinsic SHE due to the skew scattering is proportional to Δ/n i u, where 2Δ is the band gap, n i is the impurity concentration, and u is the strength of the impurity potential. (author)

N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

Science.gov (United States)

Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

2017-06-01

N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

Porous silicon damage enhanced phosphorus and aluminium gettering of p-type Czochralski silicon

International Nuclear Information System (INIS)

Hassen, M.; Ben Jaballah, A.; Hajji, M.; Rahmouni, H.; Selmi, A.; Ezzaouia, H.

2005-01-01

In this work, porous silicon damage (PSD) is presented as a simple sequence for efficient external purification techniques. The method consists of using thin nanoporous p-type silicon on both sides of the silicon substrates with randomly hemispherical voids. Then, two main sample types are processed. In the first type, thin aluminium layers (≥1 μm) are thermally evaporated followed by photo-thermal annealing treatments in N 2 atmosphere at one of several temperatures ranging between 600 and 800 deg. C. In the second type, phosphorus is continually diffused in N 2 /O 2 ambient in a solid phase from POCl 3 solution during heating at one of several temperatures ranging between 750 and 1000 deg. C for 1 h. Hall Effect and Van Der Pauw methods prove the existence of an optimum temperature in the case of phosphorus gettering at 900 deg. C yielding a Hall mobility of about 982 cm 2 V -1 s -1 . However, in the case of aluminium gettering, there is no gettering limit in the as mentioned temperature range. Metal/Si Schottky diodes are elaborated to clarify these improvements. In this study, we demonstrate that enhanced metal solubility model cannot explain the gettering effect. The solid solubility of aluminium is higher than that of P atoms in silicon; however, the device yield confirms the effectiveness of phosphorus as compared to aluminium

Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

International Nuclear Information System (INIS)

Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

2009-01-01

Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

Morphological and optical properties of n-type porous silicon

Indian Academy of Sciences (India)

type silicon wafer have been reported in the present article. Method of PS fabrication is by photo-assisted electrochemical etching with different etching current densities ( J ). Porosity and PS layer thickness, obtained by the gravimetric method, ...

Capacity spectroscopy of minority-carrier radiation traps in n-type silicon

International Nuclear Information System (INIS)

Kuchinskij, P.V.; Lomako, V.M.; Shakhlevich, L.N.

1987-01-01

Minority charge-carrier radiation traps in n-silicon, produced by neutron transmutation doping (NTD) and zone melting method, were studied using unsteady capacity spectroscopy method. Studying the parameters of defects, formed in the lower half of the restricted zone, was performed using minority carrier injection by forward current pulses. Samples were p + -n-structures, produced on the basis of silicon with different oxygen content. It is shown, that a trap with activation energy ≅E v +0.34 eV appears to be the main defect in oxygen p-silicon. Investigation into thermal stability has shown, that centers with E v +0.34 eV and E v +0.27 eV activation energies are annealed within the same temperature interval (300-400 deg C)

P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environment

CERN Document Server

AUTHOR|(CDS)2084505

2015-01-01

In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to $1.5\\times10^{15} n_{eq}/cm^{2}$ corresponding to $3000 fb^{-1}$ after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20~cm${<}R{<}$110~cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolatio...

X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

International Nuclear Information System (INIS)

Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

1998-01-01

We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

Spin relaxation through lateral spin transport in heavily doped n -type silicon

Science.gov (United States)

Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

2017-03-01

We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs

Science.gov (United States)

2015-07-01

A Novel Extraction Approach of Extrinsic and Intrinsic Parameters of InGaAs/GaN pHEMTs Andong Huang1, 2, ZhengZhong2, 3, and Yongxin Guo2, 3...Suzhou Research Institute, Suzhou, China Abstract — A novel extraction approach of extrinsic and intrinsic parameters of InGaAs/GaN pHEMTs is...parameter error function. The extrinsic elements are optimized at multi-bias points and the intrinsic ones at specific bias points. Only broad ranges

Electrodeposition of cadmium on n-type silicon single crystals of ...

African Journals Online (AJOL)

sea

type silicon have been studied as a function of different potential steps. Within appropriate potential ... including progressive nucleation on active sites and diffusion controlled cluster growth. ..... al CdSe nanocrystals on {111} gold. Surf. Sci.

Nanostructure Size Determination in N+-Type Porous Silicon by X-Ray diffractometry and Raman Spectroscopy

International Nuclear Information System (INIS)

Ramirez Porras, A.

1997-01-01

A series of porous silicon surfaces were obtained after different exposition times of electrochemical etching on cristalline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band- to -band recombination processes. In this study, a nanometer size determination of such proposed structures was performed by the use of X-Ray Diffractometry and Raman Spectroscopy. The result suggest the consistency between the so called Quantum Confined Model and the experimental results. (Author) [es

Nanostructure Size Determination in N+-Type Porous Silicon by X-Ray diffractometry and Raman Spectroscopy

CERN Document Server

Ramirez-Porras, A

1997-01-01

A series of porous silicon surfaces were obtained after different exposition times of electrochemical etching on cristalline n+- type silicon in presence of hydrofluoric acid. These kind of surfaces show photoluminescence when illuminated by UV light. One possible explanation for this is that the treated surface is made up of small crystallites the nanometer scale that split away the semiconductor band edges up to optical photon energies for the band- to -band recombination processes. In this study, a nanometer size determination of such proposed structures was performed by the use of X-Ray Diffractometry and Raman Spectroscopy. The result suggest the consistency between the so called Quantum Confined Model and the experimental results. (Author)

Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

DEFF Research Database (Denmark)

Chen, Leifeng; Yu, Hua; Zhong, Jiasong

2015-01-01

The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

Science.gov (United States)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Detection of protein kinases P38 based on reflectance spectroscopy with n-type porous silicon microcavities for diagnosing hydatidosis hydatid disease

Science.gov (United States)

Lv, Xiaoyi; Lv, Guodong; Jia, Zhenhong; Wang, Jiajia; Mo, Jiaqing

2014-11-01

Detection of protein kinases P38 of Echinococcus granulosus and its homologous antibody have great value for early diagnosis and treatment of hydatidosis hydatid disease. In this experiment, n-type mesoporous silicon microcavities have been successfully fabricated without KOH etching or oxidants treatment that reported in other literature. We observed the changes of the reflectivity spectrum before and after the antigen-antibody reaction by n-type mesoporous silicon microcavities. The binding of protein kinases P38 and its homologous antibody causes red shifts in the reflection spectrum of the sensor, and the red shift was proportional to the protein kinases P38 concentration with linear relationship.

Application of neutron transmutation doping method to initially p-type silicon material.

Science.gov (United States)

Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

2009-01-01

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon

International Nuclear Information System (INIS)

Huang, Y.L.; Ma, Y.; Job, R.; Ulyashin, A.G.

2004-01-01

In plasma-hydrogenated p-type Czochralski silicon, rapid thermal donor (TD) formation is achieved, resulting from the catalytic support of hydrogen. The n-type counter doping by TD leads to a p-n junction formation. A simple method for the indirect determination of the diffusivity of hydrogen via applying the spreading resistance probe measurements is presented. Hydrogen diffusion in silicon during both plasma hydrogenation and post-hydrogenation annealing is investigated. The impact of the hydrogenation duration, annealing temperature, and resistivity of the silicon wafers on the hydrogen diffusion is discussed. Diffusivities of hydrogen are determined in the temperature range 270-450 deg. C. The activation energy for the hydrogen diffusion is deduced to be 1.23 eV. The diffusion of hydrogen is interpreted within the framework of a trap-limited diffusion mechanism. Oxygen and hydrogen are found to be the main traps

Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

International Nuclear Information System (INIS)

Palviainen, Tanja; Tuuva, Tuure; Leinonen, Kari

2007-01-01

Detectors with n-type silicon with an n + -type guard ring were investigated. In the present work, a new p + /n/n + detector structure with an n + guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software

Minimizing guard ring dead space in silicon detectors with an n-type guard ring at the edge of the detector

Energy Technology Data Exchange (ETDEWEB)

Palviainen, Tanja [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)]. E-mail: tanja.palviainen@lut.fi; Tuuva, Tuure [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland); Leinonen, Kari [Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta (Finland)

2007-04-01

Detectors with n-type silicon with an n{sup +}-type guard ring were investigated. In the present work, a new p{sup +}/n/n{sup +} detector structure with an n{sup +} guard ring is described. The guard ring is placed at the edge of the detector. The detector depletion region extends also sideways, allowing for signal collection very close to the n-guard ring. In this kind of detector structure, the dead space of the detector is minimized to be only below the guard ring. This is proved by simulations done using Silvaco/ATLAS software.

Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

Science.gov (United States)

Reichel, Christian; Müller, Ralph; Feldmann, Frank; Richter, Armin; Hermle, Martin; Glunz, Stefan W.

2017-11-01

Passivating contacts based on thin tunneling oxides (SiOx) and n- and p-type semi-crystalline or polycrystalline silicon (poly-Si) enable high passivation quality and low contact resistivity, but the integration of these p+/n emitter and n+/n back surface field junctions into interdigitated back contact silicon solar cells poses a challenge due to high recombination at the transition region from p-type to n-type poly-Si. Here, the transition region was created in different configurations—(a) p+ and n+ poly-Si regions are in direct contact with each other ("pn-junction"), using a local overcompensation (counterdoping) as a self-aligning process, (b) undoped (intrinsic) poly-Si remains between the p+ and n+ poly-Si regions ("pin-junction"), and (c) etched trenches separate the p+ and n+ poly-Si regions ("trench")—in order to investigate the recombination characteristics and the reverse breakdown behavior of these solar cells. Illumination- and injection-dependent quasi-steady state photoluminescence (suns-PL) and open-circuit voltage (suns-Voc) measurements revealed that non-ideal recombination in the space charge regions with high local ideality factors as well as recombination in shunted regions strongly limited the performance of solar cells without a trench. In contrast, solar cells with a trench allowed for open-circuit voltage (Voc) of 720 mV, fill factor of 79.6%, short-circuit current (Jsc) of 41.3 mA/cm2, and a conversion efficiencies (η) of 23.7%, showing that a lowly conducting and highly passivating intermediate layer between the p+ and n+ poly-Si regions is mandatory. Independent of the configuration, no hysteresis was observed upon multiple stresses in reverse direction, indicating a controlled and homogeneously distributed breakdown, but with different breakdown characteristics.

Do people differentiate between intrinsic and extrinsic goals for physical activity?

Science.gov (United States)

McLachlan, Sarah; Hagger, Martin S

2011-04-01

The distinction between intrinsic and extrinsic goals, and between goal pursuit for intrinsically and extrinsically motivated reasons, is a central premise of self-determination theory. Proponents of the theory have proposed that the pursuit of intrinsic goals and intrinsically motivated goal striving each predict adaptive psychological and behavioral outcomes relative to the pursuit of extrinsic goals and extrinsically motivated goal striving. Despite evidence to support these predictions, research has not explored whether individuals naturally differentiate between intrinsic and extrinsic goals. Two studies tested whether people make this differentiation when recalling goals for leisure-time physical activity. Using memory-recall methods, participants in Study 1 were asked to freely generate physical activity goals. A subsample (N = 43) was asked to code their freely generated goals as intrinsic or extrinsic. In Study 2, participants were asked to recall intrinsic and extrinsic goals after making a decision regarding their future physical activity. Results of these studies revealed that individuals' goal generation and recall exhibited significant clustering by goal type. Participants encountered some difficulties when explicitly coding goals. Findings support self-determination theory and indicate that individuals discriminate between intrinsic and extrinsic goals.

P-type silicon drift detectors

International Nuclear Information System (INIS)

Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

1995-06-01

Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

Terahertz optical-Hall effect for multiple valley band materials: n-type silicon

International Nuclear Information System (INIS)

Kuehne, P.; Hofmann, T.; Herzinger, C.M.; Schubert, M.

2011-01-01

The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons

CERN Document Server

Holmkvist, William

2014-01-01

Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collision. The usual behavior of the silicon detectors is that they get type inverted and an increase in the depletion voltage can be seen after exposed to significant amounts of radiation. In contrast n-type Magnetic Czochralski (MCz) silicon doesn’t follow FZ silicons pattern of getting type inverted when it comes to high energy particle irradiation, in the range of GeV. However it was observed that MCz silicon diodes that had been irradiated with 23 MeV protons followed the FZ silicon behavior and did type invert. The aim of the project is to find out how the depletion voltage of MCz silicon changes after being irradiated by 70 MeV at fluencies of 1E13, 1E14 and 5E14 neq/cm2, to give a further insight of at what en...

Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

Directory of Open Access Journals (Sweden)

Goyal Prabal

2016-01-01

Full Text Available The use of hexamethyldisiloxane (HMDSO as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm and in-plane dark conductivities over the range from 10-8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells. [using p-n junctions on light receiving surface of base crystal

Science.gov (United States)

Chen, L. Y.; Loferski, J. J.

1975-01-01

Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

Not All Ideals are Equal: Intrinsic and Extrinsic Ideals in Relationships.

Science.gov (United States)

Rodriguez, Lindsey M; Hadden, Benjamin W; Knee, C Raymond

2015-03-01

The ideal standards model suggests that greater consistency between ideal standards and actual perceptions of one's relationship predicts positive relationship evaluations; however, no research has evaluated whether this differs across types of ideals. A self-determination theory perspective was derived to test whether satisfaction of intrinsic ideals buffers the importance of extrinsic ideals. Participants (N=195) in committed relationships directly and indirectly reported the extent to which their partner met their ideal on two dimensions: intrinsic (e.g., warm, intimate) and extrinsic (e.g., attractive, successful). Relationship need fulfillment and relationship quality were also assessed. Hypotheses were largely supported, such that satisfaction of intrinsic ideals more strongly predicted relationship functioning, and satisfaction of intrinsic ideals buffered the relevance of extrinsic ideals for outcomes.

Porous silicon formation by hole injection from a back side p+/n junction for electrical insulation applications

International Nuclear Information System (INIS)

Fèvre, A; Menard, S; Defforge, T; Gautier, G

2016-01-01

In this paper, we propose to study the formation of porous silicon (PS) in low doped (1 × 10 14 cm −3 ) n-type silicon through hole injection from a back side p + /n junction in the dark. This technique is investigated within the framework of electrical insulation. Three different types of junctions are investigated. The first one is an epitaxial n-type layer grown on p + doped silicon wafer. The two other junctions are carried out by boron diffusion leading to p + regions with junction depths of 20 and 115 μm. The resulting PS morphology is a double layer with a nucleation layer (NL) and macropores fully filled with mesoporous material. This result is unusual for low doped n-type silicon. Morphology variations are described depending on the junction formation process, the electrolyte composition, the anodization current density and duration. In order to validate the more interesting industrial potentialities of the p + /n injection technique, a comparison is achieved with back side illumination in terms of resulting morphology and experiments confirm comparable results. Electrical characterizations of the double layer, including NL and fully filled macropores, are then performed. To our knowledge, this is the first electrical investigation in low doped n type silicon with this morphology. Compared to the bulk silicon, the measured electrical resistivities are 6–7 orders of magnitude higher at 373 K. (paper)

P-Type Silicon Strip Sensors for the Future CMS Tracker

CERN Document Server

The Tracker Group of the CMS Collaboration

2016-01-01

The upgrade to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at CMS. Based on these results, the collaboration has chosen to use n-in-p type strip and macro-pixel sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

Science.gov (United States)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

Asian International Graduate Students’ Extrinsic Motivation to Pursue Degrees

OpenAIRE

Naomi Takashiro

2017-01-01

The author examined the types of extrinsic motivation for Asian international graduate students pursuing graduate degrees. The theoretical framework used was extrinsic motivation within Self-Determination Theory. Even though the presence of Asian international graduate students is steadily increasing worldwide, research into their extrinsic motivation is scarce. It is important for educators to explore and understand Asian international graduate students’ extrinsic motivation since such stude...

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

Science.gov (United States)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n{sup ++}/n regions

Energy Technology Data Exchange (ETDEWEB)

Dimassi, Wissem; Jafel, Hayet; Lajnef, Mohamed; Ali Kanzari, M.; Bouaicha, Mongi; Bessais, Brahim; Ezzaouia, Hatem [Laboratoire de Photovoltaique, Centre de Recherche et des Technologies de l' Energie, PB: 95, Hammam Lif 2050 (Tunisia)

2011-06-15

The realization of screen-printed contacts on silicon solar cells requires highly doped regions under the fingers and lowly doped and thin ones between them. In this work, we present a low-cost approach to fabricate selective emitter (n{sup ++}/n doped silicon regions), using oxidized porous silicon (ox-PS) as a mask. Micro-periodic fingers were opened on the porous silicon layer using a micro groove machining process. Optimized phosphorous diffusion through the micro grooved ox-PS let us obtain n{sup ++} doped regions in opened zones and n doped large regions underneath the ox-PS layer. The dark I-V characteristics of the obtained device and Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer show the possibility to use PS as a dielectric layer. The Light Beam Induced Current (LBIC) mapping of the realized device, confirm the presence of a micro periodic n{sup ++}/n type structure. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Porous silicon gettering

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

DEFF Research Database (Denmark)

Reck, Kasper; Dionigi, Fabio; Hansen, Ole

2014-01-01

electrons. Efficiencies above 60% have been predicted theoretically for high solar concentration systems. Silicon is an interesting absorber material for high efficiency PETE solar cells, partly due to its mechanical and thermal properties and partly due to its electrical properties, including a close......Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...... to ideal band gap. The work function of silicon is, however, too high for practical PETE implementations. A well-known method for lowering the work function of silicon (and other materials) is to apply approximately a monolayer of cesium to the silicon surface. We present the first measurements of PETE...

Piezoresistance in p-type silicon revisited

DEFF Research Database (Denmark)

Richter, Jacob; Pedersen, Jesper; Brandbyge, Mads

2008-01-01

We calculate the shear piezocoefficient pi44 in p-type Si with a 6×6 k·p Hamiltonian model using the Boltzmann transport equation in the relaxation-time approximation. Furthermore, we fabricate and characterize p-type silicon piezoresistors embedded in a (001) silicon substrate. We find...... to experiments. Finally, we present a fitting function of temperature and acceptor density to the 6×6 model that can be used to predict the piezoresistance effect in p-type silicon. ©2008 American Institute of Physics...... that the relaxation-time model needs to include all scattering mechanisms in order to obtain correct temperature and acceptor density dependencies. The k·p results are compared to results obtained using a recent tight-binding (TB) model. The magnitude of the pi44 piezocoefficient obtained from the TB model...

Comparison of skin barrier function and sensory nerve electric current perception threshold between IgE-high extrinsic and IgE-normal intrinsic types of atopic dermatitis.

Science.gov (United States)

Mori, T; Ishida, K; Mukumoto, S; Yamada, Y; Imokawa, G; Kabashima, K; Kobayashi, M; Bito, T; Nakamura, M; Ogasawara, K; Tokura, Y

2010-01-01

Background Two types of atopic dermatitis (AD) have been proposed, with different pathophysiological mechanisms underlying this seemingly heterogeneous disorder. The extrinsic type shows high IgE levels presumably as a consequence of skin barrier damage and feasible allergen permeation, whereas the intrinsic type exhibits normal IgE levels and is not mediated by allergen-specific IgE. Objectives To investigate the relationship between pruritus perception threshold and skin barrier function of patients with AD in a comparison between the extrinsic and intrinsic types. Methods Enrolled in this study were 32 patients with extrinsic AD, 17 with intrinsic AD and 24 healthy individuals. The barrier function of the stratum corneum was assessed by skin surface hydration and transepidermal water loss (TEWL), and pruritus perception was evaluated by the electric current perception threshold (CPT) of sensory nerves upon neuroselective transcutaneous electric stimulation. Results Skin surface hydration was significantly lower and TEWL was significantly higher in extrinsic AD than intrinsic AD or normal controls. Although there was no statistically significant difference in CPT among extrinsic AD, intrinsic AD and normal controls, CPT was significantly correlated with skin surface hydration and inversely with TEWL in intrinsic AD and normal controls, but not extrinsic AD. Finally, CPT was correlated with the visual analogue scale of itch in the nonlesional skin of patients with extrinsic but not intrinsic AD. Conclusions Patients with extrinsic AD have an impaired barrier, which increases the pre-existing pruritus but rather decreases sensitivity to external stimuli. In contrast, patients with intrinsic AD retain a normal barrier function and sensory reactivity to external pruritic stimuli.

Profiling N-Type Dopants in Silicon

Czech Academy of Sciences Publication Activity Database

Hovorka, Miloš; Mika, Filip; Mikulík, P.; Frank, Luděk

2010-01-01

Roč. 51, č. 2 (2010), s. 237-242 ISSN 1345-9678 R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803 Institutional research plan: CEZ:AV0Z20650511 Keywords : silicon * dopant contrast * photoemission electron microscopy * scanning electron microscopy Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.779, year: 2010 http://www.jim.or.jp/journal/e/51/02/237.html

The annealing of interstitial carbon atoms in high-resistivity n-type silicon after proton irradiation

CERN Document Server

Kuhnke, M; Lindström, G

2002-01-01

The annealing of interstitial carbon C sub i after 7-10 MeV and 23 GeV proton irradiations at room temperature in high-resistivity n-type silicon is investigated. Deep level transient spectroscopy is used to determine the defect parameters. The annealing characteristics of the impurity defects C sub i , C sub i C sub s , C sub i O sub i and VO sub i suggest that the mobile C sub i atoms are also captured at divacancy VV sites at the cluster peripheries and not only at C sub s and O sub i sites in the silicon bulk. The deviation of the electrical filling characteristic of C sub i from the characteristic of a homogeneously distributed defect can be explained by an aggregation of C sub i atoms in the environment of the clusters. The capture rate of electrons into defects located in the cluster environment is reduced due to a positive space charge region surrounding the negatively charged cluster core. The optical filling characteristic of C sub i suggests that the change of the triangle-shaped electric field dis...

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

Science.gov (United States)

Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

2016-03-07

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

p-type doping by platinum diffusion in low phosphorus doped silicon

Science.gov (United States)

Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

2003-07-01

In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

Substance use by college students: the role of intrinsic versus extrinsic motivation for athletic involvement.

Science.gov (United States)

Rockafellow, Bradley D; Saules, Karen K

2006-09-01

Certain types of athletic involvement may confer risk for substance use by college students. This study investigated whether motivational factors play a role in the relationship between athletic involvement and substance use. Intercollegiate athletes (n=98) and exercisers (n=120) were surveyed about substance use and motivation for athletic involvement. Athletes and exercisers who were extrinsically motivated had significantly higher rates of alcohol use than their intrinsically motivated counterparts. Results suggest that college students who are extrinsically motivated for involvement in physical activity/athletics--particularly those involved in team sports--may be in need of targeted prevention efforts. ((c) 2006 APA, all rights reserved).

The ALU+ concept: n-type silicon solar cells with surface passivated screen-printed aluminum-alloyed rear emitter

NARCIS (Netherlands)

Bock, R.; Schmidt, J.; Mau, S.; Hoex, B.; Kessels, W.M.M.; Brendel, R.

2009-01-01

Aluminum-doped p-type (Al-p+) silicon emitters fabricated by means of screen-printing and firing are effectively passivated by plasma-enhanced chemicalvapor deposited (PECVD) amorphous silicon (a-Si) and atomic-layer-deposited (ALD) aluminum oxide (Al2O3) as well as Al2O3/SiNx stacks, where the

Do intrinsic and extrinsic motivation relate differently to employee outcomes?

OpenAIRE

Kuvaas, Bard; Buch, Robert; Weibel, Antoinette; Dysvik, Anders; Nerstad, Christina

2017-01-01

In most theories that address how individual financial incentives affect work performance, researchers have assumed that two types of motivation—intrinsic and extrinsic—mediate the relationship between incentives and performance. Empirically, however, extrinsic motivation is rarely investigated. To explore the predictive validity of these theories of intrinsic and extrinsic motivation in work settings, we tested how both intrinsic and extrinsic motivation affected supervisor-ra...

Distinguishing subtypes of extrinsic motivation among people with mild to borderline intellectual disability

OpenAIRE

Frielink, N.; Schuengel, C.; Embregts, P.J.C.M.

2017-01-01

Background: According to self-determination theory, motivation is ordered in types, including amotivation, extrinsic motivation and intrinsic motivation. Self-determination theory defines four subtypes of extrinsic motivation: external motivation, introjected motivation, identified motivation and integrated motivation. Although it has been argued theoretically that the different types of motivation are universally applicable, Reid et al. () proposed a dichotomy of broad subtypes of extrinsic ...

Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly doped silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Felix, J.F. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Figueiredo, L.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Mendes, J.B.S. [Universidade Federal de Viçosa-UFV, Departamento de Física, 36570-900 Viçosa, MG (Brazil); Morais, P.C. [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil); Huazhong University of Science and Technology, School of Automation, 430074 Wuhan (China); Araujo, C.I.L. de., E-mail: dearaujo@ufv.br [Universidade de Brasília-UnB, Instituto de Física, Núcleo de Física Aplicada, 70910-900 Brasília, DF (Brazil)

2015-12-01

In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples. - Highlights: • Electrodeposition of Fe nanostructures on high resistive silicon substrates. • Spin polarized current among clusters through Si suggested by isotropic magnetoresistance. • Low field microwave absorption arising from the sample shape anisotropy. • Contactless magnetoresistive device characterization by resonance measurements.

Comb-drive GaN micro-mirror on a GaN-on-silicon platform

International Nuclear Information System (INIS)

Wang, Yongjin; Sasaki, Takashi; Wu, Tong; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl 2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform.

Asian International Graduate Students’ Extrinsic Motivation to Pursue Degrees

Directory of Open Access Journals (Sweden)

Naomi Takashiro

2017-04-01

Full Text Available The author examined the types of extrinsic motivation for Asian international graduate students pursuing graduate degrees. The theoretical framework used was extrinsic motivation within Self-Determination Theory. Even though the presence of Asian international graduate students is steadily increasing worldwide, research into their extrinsic motivation is scarce. It is important for educators to explore and understand Asian international graduate students’ extrinsic motivation since such students would provide unique, distinctive cultural aspects in the classroom in their host countries. The research design employed was qualitative. Semi-structured interviews were conducted with 10 graduate students from four Asian countries. The identified themes were a faculty influence, b personal recognition, and c utility for careers. Asian international graduate students expressed that their ultimate extrinsic motivation was to get professional jobs in academia. The author discussed the implications of these findings for instructors.

Study on 150μm thick n- and p-type epitaxial silicon sensors irradiated with 24 GeV/c protons and 1 MeV neutrons

International Nuclear Information System (INIS)

Kaska, Katharina; Moll, Michael; Fahrer, Manuel

2010-01-01

A study on 150μm epitaxial (EPI) n- and p-type silicon diodes irradiated with neutrons up to 8x10 15 n/cm 2 and protons up to 1.7x10 15 p/cm 2 has been performed by means of CV/IV, charge collection efficiency (CCE) and transient current technique (TCT) measurements. It is found that the effective space charge density increases three times faster after proton than after neutron irradiation with a slightly higher effective space charge generation rate for n-type material compared to p-type material. A drop in charge collection efficiency already at fluences of 1x10 12 n eq /cm 2 can be seen in n-type material, but is absent in p-type material. TCT measurements show space charge sign inversion from positive to negative charge in n-type material after neutron irradiation and from negative to positive space charge in p-type material after proton irradiation. No difference was found in the response of diodes manufactured by different producers out of the same wafer material.

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

International Nuclear Information System (INIS)

Duan Bao-Xing; Yang Yin-Tang

2012-01-01

In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Intrinsic and extrinsic motivation among adolescent ten-pin bowlers in kuala lumpur, malaysia.

Science.gov (United States)

Teo, Eng-Wah; Khoo, Selina; Wong, Rebecca; Wee, Eng-Hoe; Lim, Boon-Hooi; Rengasamy, Shabesan Sit

2015-03-29

Motivation has long been associated with sports engagement. However, to date no research has been performed to understand the domain of motivation among ten-pin bowlers. The purpose of this study was to investigate different types of motivation (i.e., intrinsic vs. extrinsic) based on self-determination theory from the perspective of gender and the bowler type (competitive vs. casual). A total of 240 bowlers (104 male, 136 female; 152 competitive, 88 casual) with a mean age of 16.61 ± 0.78 years were recruited in Kuala Lumpur. The Sport Motivation Scale, a 28-item self-report questionnaire measuring seven subscales (i.e., intrinsic motivation to know, intrinsic motivation to accomplish, intrinsic motivation to experience stimulation, extrinsic motivation to identify regulation, extrinsic motivation for introjection regulation, extrinsic motivation to external regulation, and amotivation) was administered. Results showed significant differences (t=10.43, df=239, p=0.01) between total scores of intrinsic and extrinsic motivation among ten-pin bowlers. There were significant gender differences with respect to intrinsic motivation to know, intrinsic motivation to accomplish, intrinsic motivation to experience stimulation, and extrinsic motivation to identify regulation. However, no significant bowler type differences were found for either the intrinsic (t=-1.15, df=238, p=0.25) or extrinsic (t=-0.51, df=238, p=0.61) motivation dimensions. In conclusion, our study demonstrated substantial intrinsic motivation for gender effects, but no bowler type effects among adolescent ten-pin bowlers.

Intrinsic and Extrinsic Motivation Among Adolescent Ten-Pin Bowlers in Kuala Lumpur, Malaysia

Directory of Open Access Journals (Sweden)

Teo Eng-Wah

2015-03-01

Full Text Available Motivation has long been associated with sports engagement. However, to date no research has been performed to understand the domain of motivation among ten-pin bowlers. The purpose of this study was to investigate different types of motivation (i.e., intrinsic vs. extrinsic based on self-determination theory from the perspective of gender and the bowler type (competitive vs. casual. A total of 240 bowlers (104 male, 136 female; 152 competitive, 88 casual with a mean age of 16.61 ± 0.78 years were recruited in Kuala Lumpur. The Sport Motivation Scale, a 28-item self-report questionnaire measuring seven subscales (i.e., intrinsic motivation to know, intrinsic motivation to accomplish, intrinsic motivation to experience stimulation, extrinsic motivation to identify regulation, extrinsic motivation for introjection regulation, extrinsic motivation to external regulation, and amotivation was administered. Results showed significant differences (t=10.43, df=239, p=0.01 between total scores of intrinsic and extrinsic motivation among tenpin bowlers. There were significant gender differences with respect to intrinsic motivation to know, intrinsic motivation to accomplish, intrinsic motivation to experience stimulation, and extrinsic motivation to identify regulation. However, no significant bowler type differences were found for either the intrinsic (t=-1.15, df=238, p=0.25 or extrinsic (t=-0.51, df=238, p=0.61 motivation dimensions. In conclusion, our study demonstrated substantial intrinsic motivation for gender effects, but no bowler type effects among adolescent ten-pin bowlers.

Intrinsic and Extrinsic Motivation Among Adolescent Ten-Pin Bowlers in Kuala Lumpur, Malaysia

Science.gov (United States)

Teo, Eng-Wah; Khoo, Selina; Wong, Rebecca; Wee, Eng-Hoe; Lim, Boon-Hooi; Rengasamy, Shabesan Sit

2015-01-01

Motivation has long been associated with sports engagement. However, to date no research has been performed to understand the domain of motivation among ten-pin bowlers. The purpose of this study was to investigate different types of motivation (i.e., intrinsic vs. extrinsic) based on self-determination theory from the perspective of gender and the bowler type (competitive vs. casual). A total of 240 bowlers (104 male, 136 female; 152 competitive, 88 casual) with a mean age of 16.61 ± 0.78 years were recruited in Kuala Lumpur. The Sport Motivation Scale, a 28-item self-report questionnaire measuring seven subscales (i.e., intrinsic motivation to know, intrinsic motivation to accomplish, intrinsic motivation to experience stimulation, extrinsic motivation to identify regulation, extrinsic motivation for introjection regulation, extrinsic motivation to external regulation, and amotivation) was administered. Results showed significant differences (t=10.43, df=239, p=0.01) between total scores of intrinsic and extrinsic motivation among ten-pin bowlers. There were significant gender differences with respect to intrinsic motivation to know, intrinsic motivation to accomplish, intrinsic motivation to experience stimulation, and extrinsic motivation to identify regulation. However, no significant bowler type differences were found for either the intrinsic (t=−1.15, df=238, p=0.25) or extrinsic (t=−0.51, df=238, p=0.61) motivation dimensions. In conclusion, our study demonstrated substantial intrinsic motivation for gender effects, but no bowler type effects among adolescent ten-pin bowlers. PMID:25964827

Silicon fiber with p-n junction

International Nuclear Information System (INIS)

Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

2014-01-01

In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

Intrinsic and extrinsic mortality reunited

DEFF Research Database (Denmark)

Koopman, Jacob J E; Wensink, Maarten J; Rozing, Maarten P

2015-01-01

Intrinsic and extrinsic mortality are often separated in order to understand and measure aging. Intrinsic mortality is assumed to be a result of aging and to increase over age, whereas extrinsic mortality is assumed to be a result of environmental hazards and be constant over age. However......, allegedly intrinsic and extrinsic mortality have an exponentially increasing age pattern in common. Theories of aging assert that a combination of intrinsic and extrinsic stressors underlies the increasing risk of death. Epidemiological and biological data support that the control of intrinsic as well...... as extrinsic stressors can alleviate the aging process. We argue that aging and death can be better explained by the interaction of intrinsic and extrinsic stressors than by classifying mortality itself as being either intrinsic or extrinsic. Recognition of the tight interaction between intrinsic and extrinsic...

Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

Directory of Open Access Journals (Sweden)

Ing-Song Yu

2013-01-01

Full Text Available Atomic layer deposition, a method of excellent step coverage and conformal deposition, was used to deposit TiO2 thin films for the surface passivation and antireflection coating of silicon solar cells. TiO2 thin films deposited at different temperatures (200°C, 300°C, 400°C, and 500°C on FZ n-type silicon wafers are in the thickness of 66.4 nm ± 1.1 nm and in the form of self-limiting growth. For the properties of surface passivation, Si surface is effectively passivated by the 200°C deposition TiO2 thin film. Its effective minority carrier lifetime, measured by the photoconductance decay method, is improved 133% at the injection level of  cm−3. Depending on different deposition parameters and annealing processes, we can control the crystallinity of TiO2 and find low-temperature TiO2 phase (anatase better passivation performance than the high-temperature one (rutile, which is consistent with the results of work function measured by Kelvin probe. In addition, TiO2 thin films on polished Si wafer serve as good ARC layers with refractive index between 2.13 and 2.44 at 632.8 nm. Weighted average reflectance at AM1.5G reduces more than half after the deposition of TiO2. Finally, surface passivation and antireflection properties of TiO2 are stable after the cofire process of conventional crystalline Si solar cells.

Metallization of DNA on silicon surface

International Nuclear Information System (INIS)

Puchkova, Anastasiya Olegovna; Sokolov, Petr; Petrov, Yuri Vladimirovich; Kasyanenko, Nina Anatolievna

2011-01-01

New simple way for silver deoxyribonucleic acid (DNA)-based nanowires preparation on silicon surface was developed. The electrochemical reduction of silver ions fixed on DNA molecule provides the forming of tightly matched zonate silver clusters. Highly homogeneous metallic clusters have a size about 30 nm. So the thickness of nanowires does not exceed 30–50 nm. The surface of n-type silicon monocrystal is the most convenient substrate for this procedure. The comparative analysis of DNA metallization on of n-type silicon with a similar way for nanowires fabrication on p-type silicon, freshly cleaved mica, and glass surface shows the advantage of n-type silicon, which is not only the substrate for DNA fixation but also the source of electrons for silver reduction. Images of bound DNA molecules and fabricated nanowires have been obtained using an atomic force microscope and a scanning ion helium microscope. DNA interaction with silver ions in a solution was examined by the methods of ultraviolet spectroscopy and circular dichroism.

Luminescence of porous silicon doped by erbium

International Nuclear Information System (INIS)

Bondarenko, V.P.; Vorozov, N.N.; Dolgij, L.N.; Dorofeev, A.M.; Kazyuchits, N.M.; Leshok, A.A.; Troyanova, G.N.

1996-01-01

The possibility of the 1.54 μm intensive luminescence in the silicon dense porous layers, doped by erbium, with various structures is shown. Low-porous materials of both porous type on the p-type silicon and porous silicon with wood-like structure on the n + type silicon may be used for formation of light-emitting structures

First results on the charge collection properties of segmented detectors made with p-type bulk silicon

International Nuclear Information System (INIS)

Casse, G.; Allport, P.P.; Bowcock, T.J.V.; Greenall, A.; Hanlon, M.; Jackson, J.N.

2002-01-01

Radiation damage of n-type bulk detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon substrate (type inversion) after a fluence of a few times 10 13 protons cm -2 . The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction can be prevented using silicon detectors with p-type substrates. Furthermore, the use of n-side readout gives higher charge collection efficiency for segmented devices operated below the full depletion voltage. Large area (∼6.4x6.4 cm 2 ) capacitively coupled 80 μm pitch detectors using polysilicon bias resistors have been fabricated on p-type substrates (n-in-p diode structure). These detectors have been irradiated with 24 GeV/c protons to an integrated fluence of 3x10 14 cm -2 and kept for 7 days at 25 deg. C to reach the broad minimum of the annealing curve. Results are presented on the comparison of their charge collection properties with detectors using p-strip read-out after corresponding dose and annealing

On the isoperimetric rigidity of extrinsic minimal balls

DEFF Research Database (Denmark)

Markvorsen, Steen; Palmer, V.

2003-01-01

We consider an m-dimensional minimal submanifold P and a metric R-sphere in the Euclidean space R-n. If the sphere has its center p on P, then it will cut out a well defined connected component of P which contains this center point. We call this connected component an extrinsic minimal R-ball of P....... The quotient of the volume of the extrinsic ball and the volume of its boundary is not larger than the corresponding quotient obtained in the space form standard situation, where the minimal submanifold is the totally geodesic linear subspace R-m. Here we show that if the minimal submanifold has dimension...... larger than 3, if P is not too curved along the boundary of an extrinsic minimal R-ball, and if the inequality alluded to above is an equality for the extrinsic minimal ball, then the minimal submanifold is totally geodesic....

Intrinsic and extrinsic mortality reunited.

Science.gov (United States)

Koopman, Jacob J E; Wensink, Maarten J; Rozing, Maarten P; van Bodegom, David; Westendorp, Rudi G J

2015-07-01

Intrinsic and extrinsic mortality are often separated in order to understand and measure aging. Intrinsic mortality is assumed to be a result of aging and to increase over age, whereas extrinsic mortality is assumed to be a result of environmental hazards and be constant over age. However, allegedly intrinsic and extrinsic mortality have an exponentially increasing age pattern in common. Theories of aging assert that a combination of intrinsic and extrinsic stressors underlies the increasing risk of death. Epidemiological and biological data support that the control of intrinsic as well as extrinsic stressors can alleviate the aging process. We argue that aging and death can be better explained by the interaction of intrinsic and extrinsic stressors than by classifying mortality itself as being either intrinsic or extrinsic. Recognition of the tight interaction between intrinsic and extrinsic stressors in the causation of aging leads to the recognition that aging is not inevitable, but malleable through the environment. Copyright © 2015 Elsevier Inc. All rights reserved.

The effects of non-contingent extrinsic and intrinsic rewards on memory consolidation.

Science.gov (United States)

Nielson, Kristy A; Bryant, Ted

2005-07-01

Emotional and arousing treatments given shortly after learning enhance delayed memory retrieval in animal and human studies. Positive affect and reward induced prior to a variety of cognitive tasks enhance performance, but their ability to affect memory consolidation has not been investigated before. Therefore, we investigated the effects of a small, non-contingent, intrinsic or extrinsic reward on delayed memory retrieval. Participants (n=108) studied and recalled a list of 30 affectively neutral, imageable nouns. Experimental groups were then given either an intrinsic reward (e.g., praise) or an extrinsic reward (e.g., US 1 dollar). After a one-week delay, participants' retrieval performance for the word list was significantly better in the extrinsic reward groups, whether the reward was expected or not, than in controls. Those who received the intrinsic reward performed somewhat better than controls, but the difference was not significant. Thus, at least some forms of arousal and reward, even when semantically unrelated to the learned material, can effectively modulate memory consolidation. These types of treatments might be useful for the development of new memory intervention strategies.

Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

Science.gov (United States)

Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

2018-03-14

We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

Electronic properties and morphology of copper oxide/n-type silicon heterostructures

Science.gov (United States)

Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

2017-08-01

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

Intrinsic and Extrinsic Motivations: Classic Definitions and New Directions.

Science.gov (United States)

Ryan; Deci

2000-01-01

Intrinsic and extrinsic types of motivation have been widely studied, and the distinction between them has shed important light on both developmental and educational practices. In this review we revisit the classic definitions of intrinsic and extrinsic motivation in light of contemporary research and theory. Intrinsic motivation remains an important construct, reflecting the natural human propensity to learn and assimilate. However, extrinsic motivation is argued to vary considerably in its relative autonomy and thus can either reflect external control or true self-regulation. The relations of both classes of motives to basic human needs for autonomy, competence and relatedness are discussed. Copyright 2000 Academic Press.

Multiplication in Silicon p-n Junctions

DEFF Research Database (Denmark)

Moll, John L.

1965-01-01

Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

Intrinsic and extrinsic motivation and intention to breast-feed.

Science.gov (United States)

Wells, Kristen J; Thompson, Nancy J; Kloeblen-Tarver, Amy S

2002-01-01

To examine the feasibility of using the cognitive evaluation theory to examine pregnant women's intention to breast-feed. A questionnaire designed to measure intrinsic and extrinsic motivation was administered to 228 pregnant women. Results provide evidence for reliability and validity of the revised instrument in this population. A factor analysis suggests the instrument measures 2 types of intrinsic motivation, one type of extrinsic motivation, and motivation related to the baby. The instrument distinguished differences in motivation between women who intend to breast-feed and those who intend to formula feed. This study helps elucidate motivational factors involved in infant-feeding decisions.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

INTRINSIC AND EXTRINSIC MOTIVATION - AN INVESTIGATION OF PERFORMANCE CORRELATION

Directory of Open Access Journals (Sweden)

Abrudan Maria-Madela

2011-07-01

Full Text Available A series of research untaken in the last decade have revealed some interesting aspects regarding the effects of different types of motivation on performance. Among the researchers who have shown interest in this field we can number: Richard Ryan, Edward Deci, Sam Glucksberg, Dan Ariely, Robert Eisenhower, Linda Shanock, analysts from London School of Economics, and others. Their findings suggest that extrinsic incentives may have a negative impact on overall performance, but a general agreement in this respect has not been reached. In this paper we intend to shed some light upon the relationship between intrinsic and extrinsic motivation and performance. Experts define intrinsic motivation as being the execution of a task or activity because of the inherent satisfaction arising from it rather than due to some separate outcome. In contrast with intrinsic motivation, we speak of extrinsic motivation whenever an activity is done in order to attain some separable outcome. With the purpose of contributing to the clarification of the links between concepts, we initiated and conducted an explanatory research. The research is based on the analysis of the relations between the results obtained by third year students and their predominant type of motivation. For this, we formulated and tested four work hypotheses using a combination of quantitative methods (investigation and qualitative methods (focus group. After the validation of the questionnaires, the respondents were divided into four categories: intrinsically motivated, extrinsically motivated, both intrinsically and extrinsically motivated and unmotivated. To analyze the collected data, we made use of Excel and SPSS. Some of the primary conclusions of the research are as follows: as the average increases, the percent of individuals having both extrinsic and intrinsic motivation is decreasing; the highest percentage of unmotivated students is concentrated in the highest average category; Female

High Sensitivity Detection of CdSe/ZnS Quantum Dot-Labeled DNA Based on N-type Porous Silicon Microcavities.

Science.gov (United States)

Lv, Changwu; Jia, Zhenhong; Lv, Jie; Zhang, Hongyan; Li, Yanyu

2017-01-01

N-type macroporous silicon microcavity structures were prepared using electrochemical etching in an HF solution in the absence of light and oxidants. The CdSe/ZnS water-soluble quantum dot-labeled DNA target molecules were detected by monitoring the microcavity reflectance spectrum, which was characterized by the reflectance spectrum defect state position shift resulting from changes to the structures' refractive index. Quantum dots with a high refractive index and DNA coupling can improve the detection sensitivity by amplifying the optical response signals of the target DNA. The experimental results show that DNA combined with a quantum dot can improve the sensitivity of DNA detection by more than five times.

Formation of copper precipitates in silicon

Science.gov (United States)

Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

1999-12-01

The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

Distinguishing subtypes of extrinsic motivation among people with mild to borderline intellectual disability

NARCIS (Netherlands)

Frielink, N.; Schuengel, C.; Embregts, P.J.C.M.

Background According to self-determination theory, motivation is ordered in types, including amotivation, extrinsic motivation and intrinsic motivation. Self-determination theory defines four subtypes of extrinsic motivation: external motivation, introjected motivation, identified motivation and

Distinguishing subtypes of extrinsic motivation among people with mild to borderline intellectual disability

NARCIS (Netherlands)

Frielink, N.; Schuengel, C.; Embregts, P.J.C.M.

2017-01-01

Background: According to self-determination theory, motivation is ordered in types, including amotivation, extrinsic motivation and intrinsic motivation. Self-determination theory defines four subtypes of extrinsic motivation: external motivation, introjected motivation, identified motivation and

Microstructure and wear behaviour of silicon doped Cr-N nanocomposite coatings

Energy Technology Data Exchange (ETDEWEB)

Bao Mingdong, E-mail: bmingd@yahoo.com.c [School of mechanical engineering, Ningbo University of Technology, Ningbo 315016 (China); Yu Lei; Xu Xuebo [School of mechanical engineering, Ningbo University of Technology, Ningbo 315016 (China); He Jiawen [State Key Lab. for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, 710049 (China); Sun Hailin [Teer Coatings Ltd., Berry Hill Industrial Estate, Droitwich Worcestershire WR9 9AS (United Kingdom); Zhejiang Huijin-Teer Coatings Technolgy Co., Ltd., Lin' an 311305 (China); Teer, D.G. [Teer Coatings Ltd., Berry Hill Industrial Estate, Droitwich Worcestershire WR9 9AS (United Kingdom)

2009-07-01

Hard Cr-N and silicon doped Cr-Si-N nanocomposite coatings were deposited using closed unbalanced magnetron sputtering ion plating system. Coatings doped with various Si contents were synthesized by changing the power applied on Si targets. Composition of the films was analyzed using glow discharge optical emission spectrometry (GDOES). Microstructure and properties of the coatings were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), and nano-indentation. The harnesses and the elastic modulus of Cr-Si-N coatings gradually increased with rising of silicon content and exhibited a maximum at silicon content of 4.1 at.% and 5.5 at.%. The maximum hardness and elastic modulus of the Cr-Si-N nanocomposite coatings were approximately 30 GPa and 352 GPa, respectively. Further increase in the silicon content resulted in a decrease in the hardness and the elastic modulus of the coatings. Results from XRD analyses of CrN coatings indicated that strongly preferred orientations of (111) were detected. The diffraction patterns of Cr-Si-N coatings showed a clear (220) with weak (200) and (311) preferred orientations, but the peak of CrN (111) was decreased with the increase of Si concentration. The XRD data of single-phase Si{sub 3}N{sub 4} was free of peak. The peaks of CrN (111) and (220) were shifted slightly and broadened with the increase of silicon content. SEM observations of the sections of Cr-Si-N coatings with different silicon concentrations showed a typical columnar structure. It was evident from TEM observation that nanocomposite Cr-Si-N coatings exhibited nano-scale grain size. Friction coefficient and specific wear rate (SWR) of silicon doped Cr-N coatings from pin-on-disk test were significantly lower in comparison to that of CrN coatings.

Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

International Nuclear Information System (INIS)

Gessner, T.; Irmer, K.

1983-01-01

A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

Effects of extrinsic point defects in phosphorene: B, C, N, O and F Adatoms

OpenAIRE

Wang, Gaoxue; Pandey, Ravindra; Karna, Shashi P.

2015-01-01

Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic properties of phosphorene using density functional theory. The surface adatoms considered are B, C, N, O and F with a [He] core electronic configuration. Our calculations show that B and C, with electronegativity close to P, prefer to break the sp3 bonds of pho...

Distinguishing subtypes of extrinsic motivation among people with mild to borderline intellectual disability

OpenAIRE

Frielink, N.; Schuengel, C.; Embregts, P.J.C.M.

2017-01-01

Background According to self-determination theory, motivation is ordered in types, including amotivation, extrinsic motivation and intrinsic motivation. Self-determination theory defines four subtypes of extrinsic motivation: external motivation, introjected motivation, identified motivation and integrated motivation. Although it has been argued theoretically that the different types of motivation are universally applicable, Reid et al. (2009) proposed a dichotomy of broad subtypes of extrins...

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Development of the intrinsic and extrinsic innervation of the gut.

Science.gov (United States)

Uesaka, Toshihiro; Young, Heather M; Pachnis, Vassilis; Enomoto, Hideki

2016-09-15

The gastrointestinal (GI) tract is innervated by intrinsic enteric neurons and by extrinsic efferent and afferent nerves. The enteric (intrinsic) nervous system (ENS) in most regions of the gut consists of two main ganglionated layers; myenteric and submucosal ganglia, containing numerous types of enteric neurons and glial cells. Axons arising from the ENS and from extrinsic neurons innervate most layers of the gut wall and regulate many gut functions. The majority of ENS cells are derived from vagal neural crest cells (NCCs), which proliferate, colonize the entire gut, and first populate the myenteric region. After gut colonization by vagal NCCs, the extrinsic nerve fibers reach the GI tract, and Schwann cell precursors (SCPs) enter the gut along the extrinsic nerves. Furthermore, a subpopulation of cells in myenteric ganglia undergoes a radial (inward) migration to form the submucosal plexus, and the intrinsic and extrinsic innervation to the mucosal region develops. Here, we focus on recent progress in understanding the developmental processes that occur after the gut is colonized by vagal ENS precursors, and provide an up-to-date overview of molecular mechanisms regulating the development of the intrinsic and extrinsic innervation of the GI tract. Copyright © 2016 Elsevier Inc. All rights reserved.

Nanostructured silicon ferromagnet collected by a permanent neodymium magnet.

Science.gov (United States)

Okuno, Takahisa; Thürmer, Stephan; Kanoh, Hirofumi

2017-11-30

Nanostructured silicon (N-Si) was prepared by anodic electroetching of p-type silicon wafers. The obtained magnetic particles were separated by a permanent neodymium magnet as a magnetic nanostructured silicon (mN-Si). The N-Si and mN-Si exhibited different magnetic properties: the N-Si exhibited ferromagnetic-like behaviour, whereas the mN-Si exhibited superparamagnetic-like behaviour.

Distinguishing subtypes of extrinsic motivation among people with mild to borderline intellectual disability.

Science.gov (United States)

Frielink, N; Schuengel, C; Embregts, P

2017-07-01

According to self-determination theory, motivation is ordered in types, including amotivation, extrinsic motivation and intrinsic motivation. Self-determination theory defines four subtypes of extrinsic motivation: external motivation, introjected motivation, identified motivation and integrated motivation. Although it has been argued theoretically that the different types of motivation are universally applicable, Reid et al. () proposed a dichotomy of broad subtypes of extrinsic motivation for people with intellectual disability (ID) due to their cognitive limitations. The current study challenges this proposal by testing whether the four subtypes of extrinsic motivation can be differentiated among people with ID as well. The subtypes of extrinsic motivation were measured using two adapted versions of the Self-Regulation Questionnaire, one regarding exercise and one regarding support. In total, 186 adults with mild to borderline ID participated in the study. Results supported the distinction between the four subtypes of extrinsic motivation regarding both exercise and support. In addition, the correlation coefficients supported a quasi-simplex pattern of correlations among the subtypes, indicating that adjacent subtypes were more closely related than non-adjacent subtypes. Moreover, the study showed sufficient Cronbach's alphas and test-retest reliabilities for early stage research. Overall, the results of the current study provide initial evidence for the universality of the four subtypes of extrinsic motivation across populations with and without ID. © 2017 The Authors. Journal of Intellectual Disability Research published by MENCAP and International Association of the Scientific Study of Intellectual and Developmental Disibilities and John Wiley & Sons Ltd.

A kinetic formulation of piezoresistance in N-type silicon: Application to non-linear effects

Science.gov (United States)

Charbonnieras, A. R.; Tellier, C. R.

1999-07-01

This paper is devoted to the theoretical study of the influence of the temperature and of the doping on the piezoresistance of N-type silicon. In the first step the fractional change in the resistivity caused by stresses is calculated in the framework of a multivalley model using a kinetic transport formulation based on the Boltzmann transport equation. In the second step shifts in the minima of the conduction band and the resulting shift of the Fermi level are expressed in terms of deformation potentials and of stresses. General expressions for the fundamental linear, π_{11} and π_{12}, and non-linear, π_{111}, π_{112}, π_{122} and π_{123}, piezoresistance coefficients are then derived. Plots of the non-linear piezoresistance coefficients against the reduced shift of the Fermi level or against temperature allow us to characterize the influence of doping and temperature. Finally some attempts are made to estimate the non-linearity for heavily doped semiconductor gauges. Cette publication est consacrée à l'étude théorique de l'influence de la température et du dopage sur la piezorésistivité du silicium type N. Dans une première étape nous adoptons le modèle de vallées et nous utilisons une formulation cinétique du transport électronique faisant appel à l'équation de transport de Boltzmann pour calculer la variation de la résistivité du semiconducteur sous contrainte. Dans la deuxième étape nous exprimons les déplacements des minima de la bande de conduction et du niveau de Fermi en termes de potentiels de déformation et de contraintes. Nous proposons ensuite des expressions générales pour les coefficients piezorésistifs fondamentaux linéaires, π_{11} et π_{12}, et non-linéaires, π_{111}, π_{112}, π_{122} et π_{123}. Des représentations graphiques des variations des coefficients non-linéaires permettent de caractériser l'influence du dopage et de la température. Enfin nous fournissons une première pré-estimation des effets

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

GaN-on-Silicon - Present capabilities and future directions

Science.gov (United States)

Boles, Timothy

2018-02-01

Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.

Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique

International Nuclear Information System (INIS)

Sheng, Chan Kok; Mahmood Mat Yunus, W.; Yunus, Wan Md. Zin Wan; Abidin Talib, Zainal; Kassim, Anuar

2008-01-01

In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption, energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50-76%) of the studies, our results found that the optical band-gap energy of p-type porous silicon (1.80-2.00 eV) was higher than that of the n-type porous silicon layer (1.70-1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity

ATLAS irradiation studies of n-in-n and p-in-n silicon microstrip detectors

CERN Document Server

Allport, P P; Buttar, C M; Carter, J; Drage, L M; Ferrère, D; Morgan, D; Riedler, P; Robinson, D

1999-01-01

Prior to the module production of the ATLAS silicon microstrip tracker for the barrel and the forward wheels, the characterisation of full-size prototype silicon detectors after radiation to fluences corresponding to 10 years of ATLAS operation is required. The behaviour of p-in-n and n-in-n detectors produced by several manufacturers before and after irradiation to a fluence of 3*10/sup 14/ protons/cm/sup 2/ at the CERN PS facility is discussed. This article summarises some recent results from the ATLAS SCT collaboration. The measurements of leakage current, full depletion voltage, signal-to-noise ratio and charge collection efficiency are presented. Despite the better efficiency performance of n-in-n detectors below depletion, the collaboration chose the p-in-n technology due to its simpler and less costly production since good charge collection efficiencies were achieved at the desired maximum bias voltage. (14 refs).

Electrochemical characteristics of bundle-type silicon nanorods as an anode material for lithium ion batteries

International Nuclear Information System (INIS)

Nguyen, Si Hieu; Lim, Jong Choo; Lee, Joong Kee

2012-01-01

Highlights: ► A metal-assisted chemical etching technique was performed on Si thin films. ► The etching process resulted in the formation of bundle-type Si nanorods. ► The morphology of Si electrodes closely relate to electrochemical characteristics. - Abstract: In order to prepare bundle-type silicon nanorods, a silver-assisted chemical etching technique was used to modify a 1.6 μm silicon thin film, which was deposited on Cu foil by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition. The bundle-type silicon nanorods on Cu foil were employed as anodes for a lithium secondary battery, without further treatment. The electrochemical characteristics of the pristine silicon thin film anodes and the bundle-type silicon nanorod anodes are different from one another. The electrochemical performance of the bundle-type silicon nanorod anodes exceeded that of the pristine Si thin film anodes. The specific capacity of the bundle-type silicon nanorod anodes is much higher than 3000 mAh g −1 at the first charge (Li insertion) cycle. The coulombic efficiency of bundle-type silicon anodes was stable at more than 97%, and the charge capacity remained at 1420 mAh g −1 , even after 100 cycles of charging and discharging. The results from the differential voltage analysis showed a side reaction at around 0.44–0.5 V, and the specific potential of this side reaction decreased after each cycle. The apparent diffusion coefficients of the two anode types were in the range of 10 −13 –10 −16 cm 2 s −1 in the first cycle. In subsequent charge cycles, these values for the silicon thin film anodes and the silicon nanorod bundle anode were approximately 10 −12 –10 −14 and 10 −13 –10 −15 cm 2 s −1 , respectively.

Suppression of photo-leakage current in amorphous silicon thin-film transistors by n-doped nanocrystalline silicon

International Nuclear Information System (INIS)

Lin, Hung-Chien; Ho, King-Yuan; Hsu, Chih-Chieh; Yan, Jing-Yi; Ho, Jia-Chong

2011-01-01

The reduction of photo-leakage current of amorphous silicon thin-film transistors (a-Si TFTs) is investigated and is found to be successfully suppressed by the use of an n-doped nanocrystalline silicon layer (n+ nc-Si) as an ohmic contact layer. The shallow-level defects of n+ nc-Si can become trapping centres of photo-induced electrons as the a-Si TFT is operated under light illumination. A lower oxygen concentration during n+ nc-Si deposition can increase the creation of shallow-level defects and improve the contrast ratio of active matrix organic light-emitting diode panels.

The Attitudes of Israeli Arab and Jewish High School Students towards Extrinsic and Intrinsic Values

Science.gov (United States)

Gross, Zehavit

2013-01-01

The aim of this research was to investigate the attitudes of Israeli Arab (n = 259) and Jewish (n = 259) high school students toward extrinsic and intrinsic values. A questionnaire, which consisted of eight value scales in two groups--extrinsic and intrinsic values--was administered. Participants were asked to state whether they agreed or…

Extrinsic CPT Violation in Neutrino Oscillations

International Nuclear Information System (INIS)

Ohlsson, Tommy

2004-01-01

In this talk, we investigate extrinsic CPT violation in neutrino oscillations in matter with three flavors. Note that extrinsic CPT violation is different from intrinsic CPT violation. Extrinsic CPT violation is one way of quantifying matter effects, whereas intrinsic CPT violation would mean that the CPT invariance theorem is not valid. We present analytical formulas for the extrinsic CPT probability differences and discuss their implications for long-baseline experiments and neutrino factory setups

Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Tuezuen, O., E-mail: Ozge.Tuzun@iness.c-strasbourg.f [InESS, UMR 7163 CNRS-UdS, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Slaoui, A.; Roques, S.; Focsa, A. [InESS, UMR 7163 CNRS-UdS, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Jomard, F.; Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France)

2009-10-01

In this work, undoped amorphous silicon layers were deposited on n-type AIC seed films and then annealed at different temperatures for epitaxial growth. The epitaxy was carried out using halogen lamps (rapid thermal process or RTP) or a tube conventional furnace (CTP). We investigated the morphology of the resulting 2 {mu}m thick epi-layers by means of optical microscopy. An average grain size of about 40 {mu}m is formed after 90 s annealing at 1000 {sup o}C in RTP. The stress and degree of crystallinity of the epi-layers were studied by micro-Raman Spectroscopy and UV-visible spectrometer as a function of annealing time. The presence of compressive stress is observed from the peak position which shifts from 520.0 cm{sup -1} to 521.0 cm{sup -1} and 522.3 cm{sup -1} after CTP annealing for 10 min and 90 min, respectively. It is shown that the full width at half maximum (FWHM) varies from 9.8 cm{sup -1} to 15.6 cm{sup -1}, and the magnitude of stress is changing from 325 MPa to 650 MPa. Finally, the highest crystallinity is achieved after annealing at 1000 {sup o}C for 90 min in a tube furnace exhibiting a crystalline fraction of 81.5%. X-ray diffraction technique was used to determine the preferential orientation of the poly-Si thin films formed by SPE technique on n{sup +} type AIC layer. The preferential orientation is <100> for all annealing times at 1000 {sup o}C.

Photo and electroluminescence of porous silicon layers

International Nuclear Information System (INIS)

Keshmini, S.H.; Samadpour, S.; Haji-Ali, E.; Rokn-Abadi, M.R.

1995-01-01

Porous silicon (PSi) layers were prepared by both chemical and electrochemical methods on n- and p-type Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates. An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emission ranging from dark red to orange yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum and heat treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied. (author)

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

Science.gov (United States)

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Single-particle properties of N = 12 to N = 20 silicon isotopes within the dispersive optical model

Science.gov (United States)

Bespalova, O. V.; Ermakova, T. A.; Klimochkina, A. A.; Spasskaya, T. I.

2017-09-01

Experimental neutron and proton single-particle energies in N = 12 to N = 20 silicon isotopes and data on neutron and proton scattering by nuclei of the isotope 28Si are analyzed on the basis of the dispersive optical model. Good agreement with available experimental data was attained. The occupation probabilities calculated for the single-particle states in question suggest a parallel-type filling of the 1 d and 2 s 1/2 neutron states in the isotopes 26,28,30,32,34Si. The single-particle spectra being considered are indicative of the closure of the Z = 14 proton subshell in the isotopes 30,32,34Si and the N = 20 neutron shell.

Impact of the p53 status of tumor cells on extrinsic and intrinsic apoptosis signaling.

Science.gov (United States)

Wachter, Franziska; Grunert, Michaela; Blaj, Cristina; Weinstock, David M; Jeremias, Irmela; Ehrhardt, Harald

2013-04-17

The p53 protein is the best studied target in human cancer. For decades, p53 has been believed to act mainly as a tumor suppressor and by transcriptional regulation. Only recently, the complex and diverse function of p53 has attracted more attention. Using several molecular approaches, we studied the impact of different p53 variants on extrinsic and intrinsic apoptosis signaling. We reproduced the previously published results within intrinsic apoptosis induction: while wild-type p53 promoted cell death, different p53 mutations reduced apoptosis sensitivity. The prediction of the impact of the p53 status on the extrinsic cell death induction was much more complex. The presence of p53 in tumor cell lines and primary xenograft tumor cells resulted in either augmented, unchanged or reduced cell death. The substitution of wild-type p53 by mutant p53 did not affect the extrinsic apoptosis inducing capacity. In summary, we have identified a non-expected impact of p53 on extrinsic cell death induction. We suggest that the impact of the p53 status of tumor cells on extrinsic apoptosis signaling should be studied in detail especially in the context of therapeutic approaches that aim to restore p53 function to facilitate cell death via the extrinsic apoptosis pathway.

Effects of ion implantation on charges in the silicon--silicon dioxide system

International Nuclear Information System (INIS)

Learn, A.J.; Hess, D.W.

1977-01-01

Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

Synthesis and characterization of silicon-doped polycrystalline GaN ...

Indian Academy of Sciences (India)

Silicon-doped polycrystalline GaN films were successfully deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency (r.f.) magnetron sputtering at a system pressure of ~ 5 Pa. The films were characterized by optical as well as microstructural measurements. The optical ...

Fabrication of Extrinsically Conductive Silicone Rubbers with High Elasticity and Analysis of Their Mechanical and Electrical Characteristics

Directory of Open Access Journals (Sweden)

Anjum Saleem

2010-08-01

Full Text Available Conductive plastics are attracting more and more interest in electronics due to their light weight and inability to rust, which are common problems associated with metals. The field of conducting plastics is not new. Much work has been done to impart electrical conductivity to mechanically strong polymers such as polypropylene, polycarbonate and epoxies, etc. However there is a need to fabricate more flexible and elastic conductive polymers such as conducting silicone rubbers for use in various applications. In this work silicone rubbers reinforced with conductive fillers have been fabricated for use as sensors in textiles to detect the resistance change produced by stretching or relaxing. The variations of electrical resistance have been investigated by stretching and releasing the strands of conductive rubbers as a function of time. Two types of silicone rubbers—addition cured and condensation cured—were compounded with different electrically conductive fillers, among which carbon fibers have shown the best results. The carbon fibers improved the electrical conductance of the rubbers, even in very low weight percentages. The increasing concentration of fillers decreases the elasticity of the rubber. In order to keep the original properties of silicones, the filler concentration was kept as low as possible to produce a significantly detectable signal. The fabricated compounds were analyzed for their mechanical properties by stress strain curves. Such materials find their applications in electronics, antistatic applications, sports and the automotive industry where they can be used as deformation sensors.

An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

International Nuclear Information System (INIS)

Elhamri, S.; Berney, R.; Mitchel, W.C.; Mitchell, W.D.; Roberts, J.C.; Rajagopal, P.; Gehrke, T.; Piner, E.L.; Linthicum, K.J.

2004-01-01

We present results of transport measurements performed on AlGaN/GaN heterostructures grown on silicon substrates. Variable temperature Hall effect measurements revealed that the temperature dependence of the carrier density and mobility were characteristic of a two-dimensional electron gas (2DEG). Carrier densities greater than 1x10 13 cm -2 and Hall mobilities in excess of 1500 cm2/V s were measured at room temperature. Variable field Hall measurements at low temperatures, and in magnetic fields up to 6 T, indicated that conduction is dominated by a single carrier type in these samples. Shubnikov-de Haas (SdH) measurements were also performed, but no oscillations were observed in fields up to 8 T and at temperatures as low as 1.2 K. Illuminating some of the samples with a blue (λ=470 nm) light emitting diode (LED) induced a persistent increase in the carrier density. SdH measurements were repeated and again no oscillations were present following illumination. However, exposing the samples to radiation from an UV (λ=395 nm) LED induced well-defined SdH oscillations in fields as low as 4 T. The observation of SdH oscillations confirmed the presence of a 2DEG in these structures. It is hypothesized that small angle scattering suppressed the oscillations before exposure to UV light. This conclusion is supported by the observed increase in the quantum scattering time, τ q , with the carrier density and the calculated quantum to transport scattering times ratio, τ q /τ c . For instance, in one of the samples the τ q increased by 32% while the τ c changed by only 3% as the carrier density increased; an indication of an increase in the screening of small angle scattering. The absence of SdH oscillations in fields up to 8 T and at temperatures as low as 1.2 K is not unique to AlGaN/GaN on silicon. This behavior was observed in AlGaN/GaN on sapphire and on silicon carbide. SdH oscillations were observed in one AlGaN/GaN on silicon carbide sample following exposure to

The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

International Nuclear Information System (INIS)

Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

1997-01-01

The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

The influence of extrinsic motivation on competition-based selection.

Science.gov (United States)

Sänger, Jessica; Wascher, Edmund

2011-10-10

The biased competition approach to visuo-spatial attention proposes that the selection of competing information is effected by the saliency of the stimulus as well as by an intention-based bias of attention towards behavioural goals. Wascher and Beste (2010) [32] showed that the detection of relevant information depends on its relative saliency compared to irrelevant conflicting stimuli. Furthermore the N1pc, N2pc and N2 of the EEG varied with the strength of the conflict. However, this system could also be modulated by rather global mechanisms like attentional effort. The present study investigates such modulations by testing the influence of extrinsic motivation on the selection of competing stimuli. Participants had to detect a luminance change in various conditions among others against an irrelevant orientation change. Half of the participants were motivated to maximize their performance by the announcement of a monetary reward for correct responses. Participants who were motivated had lower error rates than participants who were not motivated. The event-related lateralizations of the EEG showed no motivation-related effect on the N1pc, which reflects the initial saliency driven orientation of attention towards the more salient stimulus. The subsequent N2pc was enhanced in the motivation condition. Extrinsic motivation was also accompanied by enhanced fronto-central negativities. Thus, the data provide evidence that the improvement of selection performance when participants were extrinsically motivated by announcing a reward was not due to changes in the initial saliency based processing of information but was foremost mediated by improved higher-level mechanisms. Copyright © 2011 Elsevier B.V. All rights reserved.

Particle track etch method for analysis of boron in silicon using 10B(n,α)7Li reaction

International Nuclear Information System (INIS)

Chakarvarti, S.K.; Nagpaul, K.K.

1980-01-01

Boron bulk doped p-type (111) silicon thin wafers of different resistivities (1 to 100 ohm-cm +- 20%) have been analysed for boron using cellulose nitrate-Daicel and red dyed LR-115 type II films as detectors of alpha particles from 10 B(n,α) 7 Li reaction. The two detectors measure the same value of boron (approximately 0.1 ppm) in 1 ohm-cm silicon samples and agree closely with the four-point probe electrical resistivity measurement results whereas large discrepancies are observed in case of samples with resistivity > 1 ohm-cm (B concentration 1 ohm-cm. (author)

Morphological and optical properties of n-type porous silicon: effect ...

Indian Academy of Sciences (India)

Method of PS fabrication is by photo-assisted electrochemical etching with different etching current densities ... Observation of room temperature visible photoluminescence (PL) [4,5] in PS has ... are pre-treated with HF and ethanol in an ultrasonic bath for 5 min to remove any native oxide present on the silicon surface [16].

Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and Silicon

DEFF Research Database (Denmark)

Riskaer, Sven

1966-01-01

The present investigations of the free-carrier piezobirefringence phenomenon verify that in n-type germanium and silicon as well as in p-type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high......-stress piezobirefringence in these materials provides a direct and independent method for determining deformation-potential constants. For n-type germanium we obtain Ξu=18.0±0.5 eV, for n-type silicon Ξu=8.5±0.4 eV; for p-type silicon a rather crude analytical approximation yields b=-3.1 eV and d=-8.3 eV. Finally...

Study of araldite in edge protection of n-type and p-type surface barrier detectors

International Nuclear Information System (INIS)

Alencar, M.A.V.; Jesus, E.F.O.; Lopes, R.T.

1995-01-01

The aim of this work is the realization of a comparative study between the surface barrier detectors performance n and type using the epoxy resin Araldite as edge protection material with the purpose of determining which type of detector (n or p) the use of Araldite is more indicated. The surface barrier detectors were constructed using n and p type silicon wafer with resistivity of 3350Ω.cm and 5850 Ω.cm respectively. In the n type detectors, the metals used as ohmic and rectifier contacts were the Al and Au respectively, while in the p type detectors, the ohmic and rectifier contacts were Au and Al. All metallic contacts were done by evaporation in high vacuum (∼10 -4 Torr) and with deposit of 40 μm/cm 2 . The obtained results for the detectors (reverse current of -350nA and resolution from 21 to 26 keV for p type detectors and reserve current of 1μA and resolution from 44 to 49 keV for n type detectors) tend to demonstrate that use of epoxy resin Araldite in the edge protection is more indicated to p type surface barrier detectors. (author). 3 refs., 4 figs., 1 tab

Iron-59 absorption from soy hulls: intrinsic vs extrinsic labeling

International Nuclear Information System (INIS)

Lykken, G.I.; Mahalko, J.R.; Nielsen, E.J.; Dintzis, F.R.

1986-01-01

As part of an evaluation of the validity of the extrinsic labeling technique for measuring iron absorption, absorption from soy hulls extrinsically labeled ( 59 Fe added to bread dough) was compared with that from soy hulls intrinsically labeled ( 59 Fe incorporated into the soy plant during growth). Century soybeans were grown in a greenhouse. After pods had formed and were filling, each plant was stem injected twice, at 3 day intervals, with 22 μCi 59 Fe as FeCl 2 in 25 μl of 0.5 M HCl solution. After the plants had senesced, the soybeans were harvested, dried, shelled and the hulls removed. Standard meals containing 3.5 mg Fe/meal and up to 0.06 μCi 59 Fe in a soy hull bun were fed on 2 consecutive days to free-living volunteers in a crossover design. Absorption of 59 Fe was greater from intrinsically labeled soy hulls than from extrinsically labeled soy hulls, 20 +/- 20% vs 15 +/- 11% (n=14, p > 0.05 by paired t-test). Apparent absorption ranged from 1.3% to 77% from intrinsically labeled soy hulls and .5% to 29% from extrinsically labeled soy hulls with the highest absorption occurring in persons with low serum ferritin (S.F. < 8 ng/ml). These findings provide additional evidence that the extrinsic labeling method is a valid measure of iron bioavailability to humans

Extrinsic attributes that influence parents' purchase of chocolate milk for their children.

Science.gov (United States)

Li, Xiaomeng E; Lopetcharat, Kannapon; Drake, MaryAnne

2014-07-01

The consumption of milk is essential for children's heath; and flavored milk, especially chocolate milk, is often purchased to increase children's milk consumption. However, the sugar content of chocolate milk has raised health concerns. As such, it is important to understand chocolate milk extrinsic attributes that influence parents' purchase decisions when they are purchasing chocolate milk for their children. The objective of this study was to determine the key extrinsic attributes for parents when they purchase chocolate milk for their children. An online survey with a conjoint analysis design, emotions questions, and Kano questionnaire that focused on chocolate milk was conducted targeting parents. Three hundred and twelve parents participated in the survey. Parents reported positive emotions including good, good natured, happy, loving, and satisfied when purchasing chocolate milk for their kids. Three segments of parents were identified with subtle but distinct differences in their key preferences for chocolate milk attributes for their children. Type of sweetener was the primary driver of choice for purchasing chocolate milk for children followed by fat content. Among sweetener types, natural noncaloric/nonnutritive sweeteners or sucrose were preferred over artificial sweeteners, and reduced fat was preferred over full fat or skim milk. Kano results revealed that reduced fat and sugar with an all natural label and added vitamins, minerals, and protein were attractive to the majority of parents when purchasing chocolate milk for their kids. Understanding the driving extrinsic attributes for parents when they purchase chocolate milk for their children will assist manufacturers to target extrinsic attributes that are attractive to parents for chocolate milk. This study established that sweetener type and fat content are the primary extrinsic attributes affecting parents purchase decisions when choosing chocolate milk for their children. Different segments of

Study of porous silicon morphologies for electron transport

International Nuclear Information System (INIS)

Pang, Y.; Demroff, H.P.; Elliott, T.S.; Lee, B.; Lu, J.; Madduri, V.B.; Mazumdar, T.K.; McIntyre, P.M.; Smith, D.D.; Trost, H.J.

1993-01-01

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron diffraction patterns verified that bulk porous silicon is still a single crystal. In addition, a Scanning Tunnelling Microscope (STM) and an Atomic Force Microscope (AFM) were successfully applied to image the 40 angstrom gold film structure which was coated upon a cooled porous silicon layer. By associating the morphology study with the measured emitting current density of the Oxidized Porous Silicon Field Emission Triode (OPSFET), techniques for the surface treatment of porous silicon will be optimized

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.

2010-06-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

2010-01-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Novel method of separating macroporous arrays from p-type silicon substrate

International Nuclear Information System (INIS)

Peng Bobo; Wang Fei; Liu Tao; Yang Zhenya; Wang Lianwei; Fu, Ricky K. Y.; Chu, Paul K.

2012-01-01

This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed. (semiconductor materials)

Studies of defects in neutron-irradiated p-type silicon by admittance measurements of n+-p diodes

International Nuclear Information System (INIS)

Tokuda, Y.; Usami, A.

1978-01-01

Defects introduced in p-type silicon by neutron irradiation were studied by measuring the admittance of n + -p diodes. It was shown that the energy levels and capture cross sections estimated from the temperature dependence of the admittance had some uncertainty due to the temperature dependence of the concentration of free carriers in the bulk and the high-frequency-junction capacitance. So, we presented the method of determination of the energy levels, capture cross sections, and concentrations of defects from the frequency dependence of the admittance. This method consists of the measurements of G/ω and C as a function of frequency. From this method, assuming that capture cross sections are independent of temperature, the energy levels of E/sub v/+0.16 and E/sub v/+0.36 eV were obtained. For these defects, the calculated values of the hole capture cross section were 2.4 x 10 -14 and 3.7 x 10 -14 cm 2 , respectively. Comparing with other published data, the energy level of E/sub v/+0.36 eV was found to be correlated with the divacancy

Comparison of exit time moment spectra for extrinsic metric balls

DEFF Research Database (Denmark)

Hurtado, Ana; Markvorsen, Steen; Palmer, Vicente

2012-01-01

We prove explicit upper and lower bounds for the $L^1$-moment spectra for the Brownian motion exit time from extrinsic metric balls of submanifolds $P^m$ in ambient Riemannian spaces $N^n$. We assume that $P$ and $N$ both have controlled radial curvatures (mean curvature and sectional curvature...... obtain new intrinsic comparison results for the exit time spectra for metric balls in the ambient manifolds $N^n$ themselves....

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Energy Technology Data Exchange (ETDEWEB)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Hernandez-Balderrama, Luis H.; Haidet, Brian B.; Alden, Dorian; Franke, Alexander; Sarkar, Biplab; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Hayden Breckenridge, M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); REU, Physics Department at Wofford College, Spartanburg, South Carolina 29303 (United States)

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that at free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.

Generational differences in American students' reasons for going to college, 1971-2014: The rise of extrinsic motives.

Science.gov (United States)

Twenge, Jean M; Donnelly, Kristin

2016-01-01

We examined generational differences in reasons for attending college among a nationally representative sample of college students (N = 8 million) entering college between 1971-2014. We validated the items on reasons for attending college against an established measure of extrinsic and intrinsic values among college students in 2014 (n = 189). Millennials (in college 2000s-2010s) and Generation X (1980s-1990s) valued extrinsic reasons for going to college ("to make more money") more, and anti-extrinsic reasons ("to gain a general education and appreciation of ideas") less than Boomers when they were the same age in the 1960s-1970s. Extrinsic reasons for going to college were higher in years with more income inequality, college enrollment, and extrinsic values. These results mirror previous research finding generational increases in extrinsic values begun by GenX and continued by Millennials, suggesting that more recent generations are more likely to favor extrinsic values in their decision-making.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Industrial n-type solar cells with >20% cell efficiency

Energy Technology Data Exchange (ETDEWEB)

Romijn, I.G.; Anker, J.; Burgers, A.R.; Gutjahr, A.; Koppes, M.; Kossen, E.J.; Lamers, M.W.P.E.; Heurtault, Benoit; Saynova-Oosterling, D.S.; Tool, C.J.J. [ECN Solar Energy, Petten (Netherlands)

2013-03-15

To realize high efficiencies at low costs, ECN has developed the n-Pasha solar cell concept. The n-Pasha cell concept is a bifacial solar cell concept on n-Cz base material, with which average efficiencies of above 20% have been demonstrated. In this paper recent developments at ECN to improve the cost of ownership (lower Euro/Wp) of the n-Pasha cell concept are discussed. Two main drivers for the manufacturing costs of n-type solar cells are addressed: the n-type Cz silicon material and the silver consumption. We show that a large resistivity range between 2 and 8 cm can be tolerated for high cell efficiency, and that the costs due to the silver metallization can be significantly reduced while increasing the solar cell efficiency. Combining the improved efficiency and cost reduction makes the n-Pasha cell concept a very cost effective solution to manufacture high efficient solar cells and modules.

Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

Energy Technology Data Exchange (ETDEWEB)

Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

2016-08-21

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

LHCb-VELO module production with n-side read-out on n- and p-type silicon substrates

International Nuclear Information System (INIS)

Affolder, A.; Bowcock, T.J.V.; Carrol, J.L.; Casse, G.; Huse, T.; Patel, G.D.; Rinnert, K.; Smith, N.A.; Turner, P.R.

2007-01-01

The modules for the Vertex Locator detector of the LHCb experiment represent a technical challenge for their complexity. The design of the sensors uses a complex double metal routing of the connection to the read-out strips and a high density of metal lines has to be accommodated in the module. The detectors are n-side read-out to be able to survive the highest radiation damage of any micro-strip sensor used in LHC experiments. The present choice is n-strips on n-type substrates (n-in-n geometry). Double-sided lithography is required, which impact on the cost of the devices and on the module construction. Moreover, the compact size of the hybrid imposes sophisticated technical solutions for cooling the electronics and the detector. The module construction and the possible benefits offered by the choice of p-type substrate detectors compared to the present n-in-n devices are here discussed in details

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface.

Science.gov (United States)

Nishio, Kengo; Yayama, Tomoe; Miyazaki, Takehide; Taoka, Noriyuki; Shimizu, Mitsuaki

2018-01-23

Despite the scientific and technological importance of removing interface dangling bonds, even an ideal model of a dangling-bond-free interface between GaN and an insulator has not been known. The formation of an atomically thin ordered buffer layer between crystalline GaN and amorphous SiO 2 would be a key to synthesize a dangling-bond-free GaN/SiO 2 interface. Here, we predict that a silicon oxynitride (Si 4 O 5 N 3 ) layer can epitaxially grow on a GaN(0001) surface without creating dangling bonds at the interface. Our ab initio calculations show that the GaN/Si 4 O 5 N 3 structure is more stable than silicon-oxide-terminated GaN(0001) surfaces. The electronic properties of the GaN/Si 4 O 5 N 3 structure can be tuned by modifying the chemical components near the interface. We also propose a possible approach to experimentally synthesize the GaN/Si 4 O 5 N 3 structure.

Self-expandable metal stents for malignant esophageal obstruction: a comparative study between extrinsic and intrinsic compression.

Science.gov (United States)

Rhee, K; Kim, J-H; Jung, D H; Han, J W; Lee, Y C; Lee, S K; Shin, S K; Park, J C; Chung, H S; Park, J J; Youn, Y H; Park, H

2016-04-01

Self-expandable metal stents (SEMSs) are effective for malignant esophageal obstruction, but usefulness of SEMSs in extrinsic lesions is yet to be elucidated. This study is aimed at evaluating the clinical usefulness of SEMSs in the extrinsic compression compared with intrinsic. A retrospective review was conducted for 105 patients (intrinsic, 85; extrinsic, 20) with malignant esophageal obstruction who underwent endoscopic SEMSs placement. Technical and clinical success rates were evaluated and clinical outcomes were compared between extrinsic and intrinsic group. Extrinsic group was mostly pulmonary origin. Overall technical and clinical success rate was 100% and 91%, respectively, without immediate complications. Extrinsic and intrinsic group did not differ significantly in clinical success rate. The median stent patency time was 131.3 ± 85.8 days in intrinsic group while that of extrinsic was 54.6 ± 45.1 due to shorter survival after stent insertion. The 4-, 8-, and 12-week patency rates were 90.5%, 78.8%, and 64.9% respectively in intrinsic group, while stents of extrinsic group remained patent until death. Uncovered, fully covered, and double-layered stent were used evenly and the types did not influence patency in both groups. In conclusion, esophageal SEMSs can safely and effectively be used for malignant extrinsic compression as well as intrinsic. © 2015 International Society for Diseases of the Esophagus.

Emotional competence and extrinsic emotion regulation directed toward an ostracized person.

Science.gov (United States)

Nozaki, Yuki

2015-12-01

Positive interpersonal relationships hinge on individuals' competence in regulating others' emotions as well as their own. Nevertheless, little is known about the relationship between emotional competence and specific interpersonal behaviors. In particular, it is unclear which situations require emotional competence for extrinsic emotion regulation and whether emotionally competent individuals actually attempt to regulate others' emotions. To clarify these issues, the current investigation examined the relationship between emotional competence and extrinsic emotion regulation directed toward an ostracized person. The results of Study 1 (N = 39) indicated that interpersonal emotional competence (competence related to others' emotions) was positively associated with participants' efforts to relieve the ostracized person's sadness. In Study 2 (N = 120), this relationship was moderated by the ostracized person's emotional expression. In particular, participants with high interpersonal emotional competence were more likely to attempt to regulate the sadness of ostracized individuals who expressed neutral affect. In contrast, when the ostracized person expressed sadness, there were no significant relationships between high or low interpersonal emotional competence and extrinsic emotion regulation behavior. These results offer novel insight into how emotionally competent individuals use their competence to benefit others. (c) 2015 APA, all rights reserved).

The electronic structure of radial p-n junction silicon nanowires

Science.gov (United States)

Chiou, Shan-Haw; Grossman, Jeffrey

2007-03-01

Silicon nanowires with radial p-n junctions have recently been suggested for photovoltaic applications because incident light can be absorbed along the entire length of the wire, while photogenerated carriers only need to diffuse a maximum of one radius to reach the p-n junction. If the differential of the potential is larger than the binding energy of the electron-hole pair and has a range larger than the Bohr radius of electron-hole pair, then the charge separation mechanism will be similar to traditional silicon solar cells. However, in the small-diameter limit, where quantum confinement effects are prominent, both the exciton binding energy and the potential drop will increase, and the p-n junction itself may have a dramatically different character. We present ab initio calculations based on the generalized gradient approximation (GGA) of silicon nanowires with 2-3 nm diameter in the [111] growth direction. A radial p-n junction was formed by symmetrically doping boron and phosphorous at the same vertical level along the axis of the nanowire. The competition between the slope and character of the radial electronic potential and the exciton binding energy will presented in the context of a charge separation mechanism.

Altered intrinsic and extrinsic connectivity in schizophrenia.

Science.gov (United States)

Zhou, Yuan; Zeidman, Peter; Wu, Shihao; Razi, Adeel; Chen, Cheng; Yang, Liuqing; Zou, Jilin; Wang, Gaohua; Wang, Huiling; Friston, Karl J

2018-01-01

Schizophrenia is a disorder characterized by functional dysconnectivity among distributed brain regions. However, it is unclear how causal influences among large-scale brain networks are disrupted in schizophrenia. In this study, we used dynamic causal modeling (DCM) to assess the hypothesis that there is aberrant directed (effective) connectivity within and between three key large-scale brain networks (the dorsal attention network, the salience network and the default mode network) in schizophrenia during a working memory task. Functional MRI data during an n-back task from 40 patients with schizophrenia and 62 healthy controls were analyzed. Using hierarchical modeling of between-subject effects in DCM with Parametric Empirical Bayes, we found that intrinsic (within-region) and extrinsic (between-region) effective connectivity involving prefrontal regions were abnormal in schizophrenia. Specifically, in patients (i) inhibitory self-connections in prefrontal regions of the dorsal attention network were decreased across task conditions; (ii) extrinsic connectivity between regions of the default mode network was increased; specifically, from posterior cingulate cortex to the medial prefrontal cortex; (iii) between-network extrinsic connections involving the prefrontal cortex were altered; (iv) connections within networks and between networks were correlated with the severity of clinical symptoms and impaired cognition beyond working memory. In short, this study revealed the predominance of reduced synaptic efficacy of prefrontal efferents and afferents in the pathophysiology of schizophrenia.

Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

International Nuclear Information System (INIS)

Chowdhury, Subhra; Biswas, Dhrubes; Chattaraj, Swarnabha

2015-01-01

For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)

Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs

Directory of Open Access Journals (Sweden)

H. MOSBAHI

2014-05-01

Full Text Available This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft and maximum power gain (fmax was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

OpenAIRE

Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

2014-01-01

We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

International Nuclear Information System (INIS)

Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

1996-01-01

Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

THE EFFECT OF EXTRINSIC MOTIVATION ON ADVERSITY QUOTIENT IN PATIENTS WITH HIV/AIDS

Directory of Open Access Journals (Sweden)

Nursalam Nursalam

2017-07-01

Full Text Available Introduction: Patients with HIV/AIDS may have various types of psychological responses. It was very difficult situation for them. Difficulty can measured by using Adversity Quotient. As a nurse, we can give extrinsic motivation to bring back the patient HIV/AIDS’s quality of life. The objective of this study was to identify the presence effect of extrinsic motivation on Adversity Quotient in patients with HIV/AIDS in Infectious Disease Intermediateatery Treatment Unit, Dr. Soetomo Hospital, Surabaya. Method: This study was used a quasy experimental purposive sampling design. The population was taken from ambulatory patients. There were 16 respondents who met to the inclusion criteria. The independent variable was extrinsic motivation and dependent variable was Adversity Quotient. Data were collected by using questionnaire and interview, then analyzed by using Wilcoxon Signed Rank Test and Mann Whitney U Test with significance level p=0.05. Result: The result revealed that there was an effect of extrinsic motivation on Adversity Quotient of patients with HIV/AIDS (p=0.017. The extrinsic motivation was found to have an effect on control response (p=0.027 and origin response (p=0.028, there was no influence of extrinsic motivation on ownership response (p=0.334, reach (p=0.129 and endurance (p=0.161. Discussion: It can be concluded that the extrinsic motivation with intervention of social support has a positive effect on the improvement of Adversity Quotient in patients with HIV/AIDS. Further studies should measure the effectiveness of Adversity Quotient training on acceptance response in patients with HIV/AIDS.

A-centres build-up kinetics in the conductive matrix of pulled n-type silicon with calculation of their recharges at defect clusters

International Nuclear Information System (INIS)

Dolgolenko, A.P.; Fishchuk, I.I.

1981-01-01

Pulled n-Si samples with rho approximately 40 Ωcm are investigated after irradiation with different doses of fast-pile neutrons. It is known that the simple defects are created not only in the conductive matrix but also in the region of the space charge of defect clusters. Then the charge state, for example, of A-centres in the region of the space charge is defined by both, the temperature and the value of the electrostatical potential. If this circumstance is not taken into account the calculation of the conductive volume is not precise enough. In the present paper the temperature dependence of the volume fraction is calculated, in which the space charge of defect clusters occurs, taking into account the recharges of A-centres in the region of the space charge. Using the expression obtained the A-centres build-up kinetics in the conductive matrix of pulled n-type silicon is calculated. (author)

High temperature dielectric function of silicon, germanium and GaN

Energy Technology Data Exchange (ETDEWEB)

Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

2010-07-01

In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

The Effect Of Extrinsic Motivation On Adversity Quotient In Patients With HIV/AIDS

OpenAIRE

Nursalam, Nursalam; Misutarno, Misutarno; Puspitawati, Yulia Dewi

2017-01-01

Introduction: Patients with HIV/AIDS may have various types of psychological responses. It was very difficult situation for them. Difficulty can measured by using Adversity Quotient. As a nurse, we can give extrinsic motivation to bring back the patient HIV/AIDS’s quality of life. The objective of this study was to identify the presence effect of extrinsic motivation on Adversity Quotient in patients with HIV/AIDS in Infectious Disease Intermediateatery Treatment Unit, Dr. Soetomo Hospital, S...

The Effect of Extrinsic Motivation on Adversity Quotient in Patients with Hiv/aids

OpenAIRE

Nursalam, Nursalam; Misutarno, Misutarno; Puspitawati, Yulia Dewi

2008-01-01

Introduction: Patients with HIV/AIDS may have various types of psychological responses. It was very difficult situation for them. Difficulty can measured by using Adversity Quotient. As a nurse, we can give extrinsic motivation to bring back the patient HIV/AIDS’s quality of life. The objective of this study was to identify the presence effect of extrinsic motivation on Adversity Quotient in patients with HIV/AIDS in Infectious Disease Intermediateatery Treatment Unit, Dr. Soetomo Hospital, S...

Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

International Nuclear Information System (INIS)

Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

2005-01-01

Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

Process research of non-CZ silicon material

Science.gov (United States)

Campbell, R. B.

1984-01-01

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

Defining intrinsic vs. extrinsic atopic dermatitis.

Science.gov (United States)

Karimkhani, Chante; Silverberg, Jonathan I; Dellavalle, Robert P

2015-06-16

Atopic dermatitis (AD) is a chronic, relapsing inflammatory skin condition characterized by eczematous lesions, i.e. ill-demarcated erythematous patches and plaques. AD is commonly associated with elevated immunoglobulin E (IgE) and atopic disorders, such as asthma, hay fever, and food allergies. Rackemann and Mallory were some of the first to distinguish between asthma based on the presence ("extrinsic") or absence ("intrinsic") of allergy. This distinction has subsequently been applied to AD based on the presence ("extrinsic") or absence ("intrinsic") of increased IgE and atopic disease. Although the distinction between intrinsic and extrinsic AD is widely used, it remains controversial.

VUV-sensitive silicon-photomultipliers for the nEXO-experiment

Energy Technology Data Exchange (ETDEWEB)

Wrede, Gerrit; Bayerlein, Reimund; Hufschmidt, Patrick; Jamil, Ako; Schneider, Judith; Wagenpfeil, Michael; Ziegler, Tobias; Hoessl, Juergen; Anton, Gisela; Michel, Thilo [ECAP, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (Germany)

2016-07-01

The nEXO (next Enriched Xenon Observatory) experiment will search for the neutrinoless double beta decay of Xe-136 with a liquid xenon TPC (Time ProjectionChamber). The sensitivity of the experiment is related to the energy resolution, which itself depends on the accuracies of the measurements of the amount of drifting electrons and the number of scintillation photons with their wavelength being in the vacuum ultraviolet band. Silicon Photomultipliers (SiPM) shall be used for the detection of the scintillation light, since they can be produced extremely radiopure. Commercially available SiPM do not fulfill all requirements of the nEXO experiment, thus a dedicated development is necessary. To characterize the silicon photomultipliers, we have built a test apparatus for xenon liquefaction, in which a VUV-sensitive photomultiplier tube can be operated together with the SiPM. In this contribution we present our apparatus for the SiPM characterization measurements and our latest results on the test of the silicon photomultipliers for the detection of xenon scintillation light.

Electrochemical characterization of carbon coated bundle-type silicon nanorod for anode material in lithium ion secondary batteries

International Nuclear Information System (INIS)

Halim, Martin; Kim, Jung Sub; Choi, Jeong-Gil; Lee, Joong Kee

2015-01-01

Highlights: • Bundle-type silicon nanorods (BSNR) were synthesized by metal assisted chemical etching. • Novel bundle-type nanorods electrode showed self-relaxant characteristics. • The self-relaxant property was enhanced by increasing the silver concentration. • PAA binder enhanced the self-relaxant property of the silicon material. • Carbon coated BSNR (BSNR@C) has evidently provided better cycle performance. - Abstract: Nanostructured silicon synthesis by surface modification of commercial micro-powder silicon was investigated in order to reduce the maximum volume change over cycle. The surface of micro-powder silicon was modified using an Ag metal-assisted chemical etching technique to produce nanostructured material in the form of bundle-type silicon nanorods. The volume change of the electrode using the nanostructured silicon during cycle was investigated using an in-situ dilatometer. Our result shows that nanostructured silicon synthesized using this method showed a self-relaxant characteristic as an anode material for lithium ion battery application. Moreover, binder selection plays a role in enhancing self-relaxant properties during delithiation via strong hydrogen interaction on the surface of the silicon material. The nanostructured silicon was then coated with carbon from propylene gas and showed higher capacity retention with the use of polyacrylic acid (PAA) binder. While the nano-size of the pore diameter control may significantly affect the capacity fading of nanostructured silicon, it can be mitigated via carbon coating, probably due to the prevention of Li ion penetration into 10 nano-meter sized pores

Electrochemical characterization of carbon coated bundle-type silicon nanorod for anode material in lithium ion secondary batteries

Energy Technology Data Exchange (ETDEWEB)

Halim, Martin [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Energy and Environmental Engineering, Korea University of Science and Technology, Gwahangno, Yuseong-gu, Daejeon, 305-333 (Korea, Republic of); Kim, Jung Sub [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Material Science & Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Choi, Jeong-Gil [Department of Chemical Engineering, Hannam University, 461-1 Junmin-dong, Yusung-gu, Taejon 305-811 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Energy and Environmental Engineering, Korea University of Science and Technology, Gwahangno, Yuseong-gu, Daejeon, 305-333 (Korea, Republic of)

2015-04-15

Highlights: • Bundle-type silicon nanorods (BSNR) were synthesized by metal assisted chemical etching. • Novel bundle-type nanorods electrode showed self-relaxant characteristics. • The self-relaxant property was enhanced by increasing the silver concentration. • PAA binder enhanced the self-relaxant property of the silicon material. • Carbon coated BSNR (BSNR@C) has evidently provided better cycle performance. - Abstract: Nanostructured silicon synthesis by surface modification of commercial micro-powder silicon was investigated in order to reduce the maximum volume change over cycle. The surface of micro-powder silicon was modified using an Ag metal-assisted chemical etching technique to produce nanostructured material in the form of bundle-type silicon nanorods. The volume change of the electrode using the nanostructured silicon during cycle was investigated using an in-situ dilatometer. Our result shows that nanostructured silicon synthesized using this method showed a self-relaxant characteristic as an anode material for lithium ion battery application. Moreover, binder selection plays a role in enhancing self-relaxant properties during delithiation via strong hydrogen interaction on the surface of the silicon material. The nanostructured silicon was then coated with carbon from propylene gas and showed higher capacity retention with the use of polyacrylic acid (PAA) binder. While the nano-size of the pore diameter control may significantly affect the capacity fading of nanostructured silicon, it can be mitigated via carbon coating, probably due to the prevention of Li ion penetration into 10 nano-meter sized pores.

Extrinsic coefficient charcterisation of PZT ceramics near the morphotropic phase boundary

Directory of Open Access Journals (Sweden)

Albareda, A.

2006-06-01

Full Text Available PZT ceramics with high piezoelectric coefficients have high extrinsic contributions. This extrinsic behaviour, which is related to the domain wall movement, produces high non-linear effects that are sometimes inconvenient, for example when it increases the losses in power devices. The relation between extrinsic behaviour and non-linearities could be used to provide a good extrinsic characterization of materials in order to optimise the piezoelectric devices. In all cases the physical explanation of the behaviour is sought. The aim of this work is to study the dependence of the linear and non-linear dielectric, piezoelectric and mechanical coefficients on the Ti fraction in PZT ceramic compositions near the morphotropic phase boundary (MPB. The dependence of these coefficients on the defect concentration is also analysed. Hard ceramics belonging to Ferroperm Piezoceramics, with two different acceptor dopant levels, high and low, have been measured.

Las cerámicas PZT con coeficientes piezoeléctricos elevados poseen contribuciones extrínsecas grandes. Este comportamiento extrínseco, relacionado con el movimiento de las paredes de los dominios, comporta efectos no lineales grandes que no siempre son deseables, por ejemplo, al incrementar las pérdidas de los dispositivos piezoeléctricos. Esta correspondencia entre efectos extrínsecos y no linealidades puede ser utilizada para caracterizar las cerámicas con el fin de optimizar sus propiedades piezoeléctricas. En todos los casos se busca una interpretación física de los resultados obtenidos. El objetivo de este trabajo es el estudio de la dependencia de los coeficientes lineales y no lineales dieléctricos, piezoeléctricos y elásticos con la fracción de Ti en cerámicas PZT con composiciones de Zr-Ti cerca de la transición de fase morfotrópica (MPB. También se analiza la dependencia de estos coeficientes con la concentración de impurezas, utilizando para ello cerámicas de

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

Directory of Open Access Journals (Sweden)

S. Taylor

2012-06-01

Full Text Available In capacitance-voltage (C-V measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value, that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate and the parasitic effects. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled based on a dual frequency technique. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS capacitor on frequency dispersion was also studied. The effect of surface roughness on frequency dispersion is also discussed. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Curie-von Schweidler (CS law, the Kohlrausch-Williams-Watts (KWW relationship and the Havriliak-Negami (HN relationship. Dielectric relaxation mechanisms are also discussed.

Effect of Current Density on Thermal and Optical Properties of p-Type Porous Silicon

International Nuclear Information System (INIS)

Kasra Behzad; Wan Mahmood Mat Yunus; Zainal Abidin Talib; Azmi Zakaria; Afarin Bahrami

2011-01-01

The different parameters of the porous silicon (PSi) can be tuned by changing some parameters in preparation process. We have chosen the anodization as formation method, so the related parameters should be changed. In this study the porous silicon (PSi) layers were formed on p-type Si wafer. The samples were anodized electrically in a fixed etching time under some different current densities. The structural and optical properties of porous silicon (PSi) on silicon (Si) substrates were investigated using photoluminescence (PL) and Photoacoustic Spectroscopy (PAS). (author)

Intrinsic and extrinsic motivation for smoking cessation.

Science.gov (United States)

Curry, S; Wagner, E H; Grothaus, L C

1990-06-01

An intrinsic-extrinsic model of motivation for smoking cessation was evaluated with 2 samples (ns = 1.217 and 151) of smokers who requested self-help materials for smoking cessation. Exploratory and confirmatory principal components analysis on a 36-item Reasons for Quitting (RFQ) scale supported the intrinsic-extrinsic motivation distinction. A 4-factor model, with 2 intrinsic dimensions (concerns about health and desire for self-control) and 2 extrinsic dimensions (immediate reinforcement and social influence), was defined by 20 of the 36 RFQ items. The 20-item measure demonstrated moderate to high levels of internal consistency and convergent and discriminant validity. Logistic regression analyses indicated that smokers with higher levels of intrinsic relative to extrinsic motivation were more likely to achieve abstinence from smoking.

CT Accuracy of Extrinsic Tongue Muscle Invasion in Oral Cavity Cancer.

Science.gov (United States)

Junn, J C; Baugnon, K L; Lacayo, E A; Hudgins, P A; Patel, M R; Magliocca, K R; Corey, A S; El-Deiry, M; Wadsworth, J T; Beitler, J J; Saba, N F; Liu, Y; Aiken, A H

2017-02-01

Extrinsic tongue muscle invasion in oral cavity cancer upstages the primary tumor to a T4a. Despite this American Joint Committee on Cancer staging criterion, no studies have investigated the accuracy or prognostic importance of radiologic extrinsic tongue muscle invasion, the feasibility of standardizing extrinsic tongue muscle invasion reporting, or the degree of agreement across different disciplines: radiology, surgery, and pathology. The purpose of this study was to assess the agreement among radiology, surgery, and pathology for extrinsic tongue muscle invasion and to determine the imaging features most predictive of extrinsic tongue muscle invasion with surgical/pathologic confirmation. Thirty-three patients with untreated primary oral cavity cancer were included. Two head and neck radiologists, 3 otolaryngologists, and 1 pathologist prospectively evaluated extrinsic tongue muscle invasion. Fourteen of 33 patients had radiologic extrinsic tongue muscle invasion; however, only 8 extrinsic tongue muscle invasions were confirmed intraoperatively. Pathologists were unable to determine extrinsic tongue muscle invasion in post-formalin-fixed samples. Radiologic extrinsic tongue muscle invasion had 100% sensitivity, 76% specificity, 57% positive predictive value, and 100% negative predictive value with concurrent surgical-pathologic evaluation of extrinsic tongue muscle invasion as the criterion standard. On further evaluation, the imaging characteristic most consistent with surgical-pathologic evaluation positive for extrinsic tongue muscle invasion was masslike enhancement. Evaluation of extrinsic tongue muscle invasion is a subjective finding for all 3 disciplines. For radiology, masslike enhancement of extrinsic tongue muscle invasion most consistently corresponded to concurrent surgery/pathology evaluation positive for extrinsic tongue muscle invasion. Intraoperative surgical and pathologic evaluation should be encouraged to verify radiologic extrinsic tongue

Positron annihilation lifetime in float-zone n-type silicon irradiated by fast electrons: a thermally stable vacancy defect

International Nuclear Information System (INIS)

Arutyunov, Nikolay; Emtsev, Vadim; Oganesyan, Gagik; Krause-Rehberg, Reinhard; Elsayed, Mohamed; Kozlovskii, Vitalii

2016-01-01

Temperature dependency of the average positron lifetime has been investigated for n-type float-zone silicon, n-FZ-Si(P), subjected to irradiation with 0.9 MeV electrons at RT. In the course of the isochronal annealing a new defect-related temperature-dependent pattern of the positron lifetime spectra has been revealed. Beyond the well known intervals of isochronal annealing of acceptor-like defects such as E-centers, divacancies and A-centers, the positron annihilation at the vacancy defects has been observed in the course of the isochronal annealing from ∝ 320 C up to the limit of reliable detecting of the defect-related positron annihilation lifetime at ≥ 500 C. These data correlate with the ones of recovery of the concentration of the charge carriers and their mobility which is found to continue in the course of annealing to ∝ 570 C; the annealing is accomplished at ∝650 C. A thermally stable complex consisting of the open vacancy volume and the phosphorus impurity atom, V_o_p-P, is suggested as a possible candidate for interpreting the data obtained by the positron annihilation lifetime spectroscopy. An extended couple of semi-vacancies, 2V_s_-_e_x_t, as well as a relaxed inwards a couple of vacancies, 2V_i_n_w, are suggested as the open vacancy volume V_o_p to be probed with the positron. It is argued that a high thermal stability of the V_s_-_e_x_t PV_s_-_e_x_t (or V_i_n_wPV_i_n_w_.) configuration is contributed by the efficiency of PSi_5 bonding. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Intrinsic and extrinsic motivational orientations in the competitive context: an examination of person-situation interactions.

Science.gov (United States)

Abuhamdeh, Sami; Csikszentmihalyi, Mihaly

2009-10-01

The current study examined Intrinsic Motivation Orientation and Extrinsic Motivation Orientation (Work Preference Inventory; Amabile, Hill, Hennessey, & Tighe, 1994) as potential trait-level moderators of the way Internet chess players responded to the intrinsic and extrinsic rewards of the chess games they played. On the basis of the defining characteristics of these 2 types of motivational orientations, we predicted that (a) Intrinsic Motivation Orientation would be associated with a stronger curvilinear relationship between challenge and enjoyment and (b) Extrinsic Motivation Orientation would be associated with a heightened affective responsivity to competitive outcome (i.e., winning vs. losing). Results supported the predictions. Implications of the findings are discussed.

Are competition and extrinsic motivation reliable predictors of academic cheating?

Directory of Open Access Journals (Sweden)

Gábor eOrosz

2013-02-01

Full Text Available Previous studies suggest that extrinsic motivation and competition are reliable predictors of academic cheating. The aim of the present questionnaire study was to separate the effects of motivation- and competition-related variables on academic cheating by Hungarian high school students (N = 620, M = 264, F = 356. Structural equation modeling showed that intrinsic motivation has a negative effect, and amotivation has a positive indirect effect on self-reported academic cheating. In contrast, extrinsic motivation had no significant effect. Indirect positive influence on cheating, based on some characteristics of hypercompetition, was also found, whereas attitudes towards self-developmental competition had a mediated negative influence. Neither constructive nor destructive competitive classroom climate had a significant impact on academic dishonesty. Acceptance of cheating and guilt has significant and direct effect on self-reported cheating. In comparison with them, the effects of motivational and competition-related variables are relatively small, even negligible. These results suggest that extrinsic motivation and competition are not amongst the most reliable predictors of academic cheating behavior.

Depth resolved investigations of boron implanted silicon

Science.gov (United States)

Sztucki, M.; Metzger, T. H.; Milita, S.; Berberich, F.; Schell, N.; Rouvière, J. L.; Patel, J.

2003-01-01

We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6×10 15 ions/cm -2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {1 1 1} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.

Hydrogen Production Using a Molybdenum Sulfide Catalyst on a Titanium-Protected n+p-Silicon Photocathode

DEFF Research Database (Denmark)

Seger, Brian; Laursen, Anders Bo; Vesborg, Peter Christian Kjærgaard

2012-01-01

A low-cost substitute: A titanium protection layer on silicon made it possible to use silicon under highly oxidizing conditions without oxidation of the silicon. Molybdenum sulfide was electrodeposited on the Ti-protected n+p-silicon electrode. This electrode was applied as a photocathode for wat...

Radiation- stimulated adsorption of n-hexane on the surface of silicon

International Nuclear Information System (INIS)

Hajiyeva, N.N.

2014-01-01

Full text : This paper presents the results of studies of radiation-stimulated adsorption of n-hexane on a silicon surface, obtained by infrared reflection-absorption spectroscopy method. It has been used a monocrystal silicon plate with high reflectance coefficient of the surface. Irradiation of the samples was carried out on gamma-quantum source of 60Co

SiN sub x passivation of silicon surfaces

Science.gov (United States)

Olsen, L. C.

1986-01-01

The objectives were to perform surface characterization of high efficiency n+/p and p+/n silicon cells, to relate surface density to substrate dopant concentration, and to identify dominant current loss mechanisms in high efficiency cells. The approach was to measure density of states on homogeneously doped substrates with high frequency C-V and Al/SiN sub x/Si structures; to investigate density of states and photoresponse of high efficiency N+/P and P+/N cells; and to conduct I-V-T studies to identify current loss nechanisms in high efficiency cells. Results are given in tables and graphs.

The study of 1 MeV electron irradiation induced defects in N-type and P-type monocrystalline silicon

Science.gov (United States)

Babaee, S.; Ghozati, S. B.

2017-12-01

Despite extensive use of GaAs cells in space, silicon cells are still being used. The reason is that not only they provide a good compromise between efficiency and cost, but also some countries do not have the required technology for manufacturing GaAs. Behavior of a silicon cell under any levels of charged particle irradiation could be deducted from the results of a damage equivalent 1 MeV electron irradiation using the NASA EQflux open source software package. In this paper for the first time, we have studied the behavior of a silicon cell before and after 1 MeV electron irradiation with 1014, 1015 and 1016 electrons-cm-2 fluences, using SILVACO TCAD simulation software package. Simulation was carried out at room temperature under AM0 condition. Results reveal that open circuit voltage and efficiency decrease after irradiation while short circuit current shows a slight increase in the trend around 5 × 1016 electrons-cm-2, and short circuit current loss plays an important role on efficiency changes rather than open circuit voltage.

Mobility of charge carriers in porous silicon layers

International Nuclear Information System (INIS)

Forsh, P. A.; Martyshov, M. N.; Latysheva, A. P.; Vorontsov, A. S.; Timoshenko, V. Yu.; Kashkarov, P. K.

2008-01-01

The (conduction) mobility of majority charge carriers in porous silicon layers of the n and p types is estimated by joint measurements of electrical conductivity and free charge carrier concentration, which is determined from IR absorption spectra. Adsorption of donor and acceptor molecules leading to a change in local electric fields in the structure is used to identify the processes controlling the mobility in porous silicon. It is found that adsorption of acceptor and donor molecules at porous silicon of the p and n types, respectively, leads to a strong increase in electrical conductivity, which is associated with an increase in the concentration of free carrier as well as in their mobility. The increase in the mobility of charge carriers as a result of adsorption indicates the key role of potential barriers at the boundaries of silicon nanocrystals and may be due to a decrease in the barrier height as a result of adsorption

Selfsupported epitaxial silicon films

International Nuclear Information System (INIS)

Lazarovici, D.; Popescu, A.

1975-01-01

The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

Derivation of the extrinsic values of biological diversity from its intrinsic value and of both from the first principles of evolution.

Science.gov (United States)

White, Peter S

2013-12-01

Conservation ethics have been based on 2 philosophical value systems: extrinsic value (defined broadly to include all values that derive from something external to the thing valued) and intrinsic value. Valuing biological diversity on the basis of an extrinsic value system is problematic because measurement is often difficult; extrinsic value changes as spatial or temporal scales change; extrinsic value differs on the basis of external factors; some species have trivial or negative extrinsic values; and extrinsic value varies across human cultures and societies and with such factors as socioeconomic conditions, individual experiences, and educational backgrounds. Valuing biological diversity on the basis of an intrinsic value system also poses challenges because intrinsic value can be seen as a disguised form of human extrinsic value; intrinsic value is initially ambiguous as to which objects or characteristics of biological diversity are to being valued; all aspects of biological diversity (e.g., species and ecosystems) are transitory; species and ecosystems are not static concrete entities; and intrinsic value of one species is often in conflict with the intrinsic value of other species. Extrinsic and intrinsic value systems share a common origin, such that extrinsic values are always derived from intrinsic value and life mutely expresses both intrinsic and extrinsic values-these are derived from and are products of biological evolution. Probing the values that underlie conservation helps the community clearly articulate its aims. Derivación de los Valores Extrínsecos de la Biodiversidad a Partir de sus Valores Intrínsecos y de Ambos a Partir de los Primeros Principios de la Evolución. © 2013 Society for Conservation Biology.

Surface chemistry of a hydrogenated mesoporous p-type silicon

Energy Technology Data Exchange (ETDEWEB)

Media, El-Mahdi, E-mail: belhadidz@tahoo.fr; Outemzabet, Ratiba, E-mail: oratiba@hotmail.com

2017-02-15

Highlights: • Due to its large specific surface porous silicon is used as substrate for drug therapy and biosensors. • We highlight the evidency of the contribution of the hydrides (SiHx) in the formation of the porous silicon. • The responsible species in the porous silicon formation are identified and quantified at different conditions. • By some chemical treatments we show that silicon surface can be turn from hydrophobic to hydrophilic. - Abstract: The finality of this work is devoted to the grafting of organic molecules on hydrogen passivated mesoporous silicon surfaces. The study would aid in the development for the formation of organic monolayers on silicon surface to be exploited for different applications such as the realisation of biosensors and medical devices. The basic material is silicon which has been first investigated by FTIR at atomistic plane during the anodic forward and backward polarization (i.e. “go” and “return”). For this study, we applied a numerical program based on least squares method to infrared absorbance spectra obtained by an in situ attenuated total reflection on p-type silicon in diluted HF electrolyte. Our numerical treatment is based on the fitting of the different bands of IR absorbance into Gaussians corresponding to the different modes of vibration of molecular groups such as siloxanes and hydrides. An adjustment of these absorbance bands is done systematically. The areas under the fitted bands permit one to follow the intensity of the different modes of vibration that exist during the anodic forward and backward polarization in order to compare the reversibility of the phenomenon of the anodic dissolution of silicon. It permits also to follow the evolution between the hydrogen silicon termination at forward and backward scanning applied potential. Finally a comparison between the states of the initial and final surface was carried out. We confirm the presence of clearly four and three distinct vibration modes

Application of plasma silicon nitride to crystalline thin-film silicon solar cells. Paper

Energy Technology Data Exchange (ETDEWEB)

Schmidt, J.; Oberbeck, L.; Rinke, T.J.; Berge, C.; Bergmann, R.B.

2002-07-01

We use plasma-enhanced chemical vapour deposition to deposit silicon nitride (SiN{sub x}) films at low temperature(400 C) onto the front surface of two different types of crystalline thin-film Si solar cells. The silicon nitride acts as an excellent antireflection coating on Si and provides a very high degree of electronic surface passivation over a wide range of compositions, including near-stoichiometric and Si-rich SiN{sub x}. Application of stoichiometric SiN{sub x} to non-textured thin-film cells, epitaxially grown at low temperature by ion-assisted deposition onto a monocrystalline Si substrate, results in an open-circuit voltage of 622 mV, a short-circuit current density of 26.6 mA/cm{sup 2} and an efficiency of 12.7%. It is shown that the SiN{sub x}-passivated in-situ grown n{sup +}-emitter of this cell type allows to reach open-circuit voltages of up to 667 mV. Silicon-rich SiN{sub x} is applied to the phosphorus-diffused n{sup +}-emitter of a textured thin-film cell on a glass superstrate fabricated by layer-transfer. The emitter saturation current density of these cells is only 40-64 fA/cm{sup 2}, which allows for open-circuit voltages of up to 699 mV. An impressively high open-circuit voltage of 638 mV and a short-circuit current density of 32.0 mA/cm{sup 2} are obtained for a 25 {mu}m thick SiN{sub x}-passivated, random pyramid-textured transfer cell. A transfer cell efficiency of 15.3% is independently confirmed.

Effects of extrinsic point defects in phosphorene: B, C, N, O, and F adatoms

Energy Technology Data Exchange (ETDEWEB)

Wang, Gaoxue, E-mail: gaoxuew@mtu.edu, E-mail: pandey@mtu.edu, E-mail: shashi.p.karna.civ@mail.mil; Pandey, Ravindra, E-mail: gaoxuew@mtu.edu, E-mail: pandey@mtu.edu, E-mail: shashi.p.karna.civ@mail.mil [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Karna, Shashi P., E-mail: gaoxuew@mtu.edu, E-mail: pandey@mtu.edu, E-mail: shashi.p.karna.civ@mail.mil [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, ATTN: RDRL-WM, Aberdeen Proving Ground, Maryland 21005-5069 (United States)

2015-04-27

Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic properties of phosphorene using density functional theory. The surface adatoms considered are B, C, N, O, and F with a [He] core electronic configuration. Our calculations show that B and C, with electronegativity close to P, prefer to break the sp{sup 3} bonds of phosphorene and reside at the interstitial sites in the 2D lattice by forming sp{sup 2} like bonds with the native atoms. On the other hand, N, O, and F, which are more electronegative than P, prefer the surface sites by attracting the lone pairs of phosphorene. B, N, and F adsorption will also introduce local magnetic moment to the lattice. Moreover, B, C, N, and F adatoms will modify the band gap of phosphorene, yielding metallic transverse tunneling characters. Oxygen does not modify the band gap of phosphorene, and a diode like tunneling behavior is observed. Our results therefore offer a possible route to tailor the electronic and magnetic properties of phosphorene by the adatom functionalization and provide the physical insights of the environmental sensitivity of phosphorene, which will be helpful to experimentalists in evaluating the performance and aging effects of phosphorene-based electronic devices.

Diffusion by extrinsic noise in the kicked Harper map

International Nuclear Information System (INIS)

Park, Gunyoung; Chang, C. S.

2001-01-01

A significantly improved analytic understanding of the extrinsically driven diffusion process is presented in a nonlinear dynamical system in which the phase space is divided into periodic two-dimensional tiles of regular motion, separated by a connected separatrix network (web) [previously studied by A. J. Lichtenberg and Blake P. Wood, Phys. Rev. Lett. >62, 2213 (1989)]. The system is represented by the usual 'kicked Harper map' with added extrinsic noise terms. Three different diffusion regimes are found depending upon the strength of the extrinsic perturbation l relative to the web and regular motions. When the extrinsic noise is dominant over the intrinsic stochasticity and the regular rotation motions in the tile, diffusion obeys the random phase scaling l 2 . When the extrinsic noise is dominant over the intrinsic stochasticity, but weaker than the regular rotation motion, the diffusion scales as lK 1/2 , where K is the strength of the intrinsic kick. These findings agree well with numerical simulation results. When the extrinsic noise process is weaker than the stochastic web process, we analytically reproduce the well-known numerical result: The web diffusion is reduced by the ratio of phase-space areas of intrinsic to extrinsic stochasticity

Type I Clathrates as Novel Silicon Anodes: An Electrochemical and Structural Investigation

Science.gov (United States)

Li, Ying; Raghavan, Rahul; Wagner, Nicholas A.; Davidowski, Stephen K.; Baggetto, Loïc; Zhao, Ran; Cheng, Qian; Yarger, Jeffery L.; Veith, Gabriel M.; Ellis‐Terrell, Carol; Miller, Michael A.; Chan, Kwai S.

2015-01-01

Silicon clathrates contain cage‐like structures that can encapsulate various guest atoms or molecules. An electrochemical evaluation of type I silicon clathrates based on Ba8AlySi46−y as the anode material for lithium‐ion batteries is presented here. Postcycling characterization with nuclear magnetic resonance and X‐ray diffraction shows no discernible structural or volume changes even after electrochemical insertion of 44 Li (≈1 Li/Si) into the clathrate structure. The observed properties are in stark contrast with lithiation of other silicon anodes, which become amorphous and suffer from large volume changes. The electrochemical reactions are proposed to occur as single phase reactions at approximately 0.2 and 0.4 V versus Li/Li+ during lithiation and delithiation, respectively, distinct from diamond cubic or amorphous silicon anodes. Reversible capacities as high as 499 mAh g−1 at a 5 mA g−1 rate were observed for silicon clathrate with composition Ba8Al8.54Si37.46, corresponding to ≈1.18 Li/Si. These results show that silicon clathrates could be promising durable anodes for lithium‐ion batteries. PMID:27980951

Thermoelectric characteristics of Pt-silicide/silicon multi-layer structured p-type silicon

International Nuclear Information System (INIS)

Choi, Wonchul; Jun, Dongseok; Kim, Soojung; Shin, Mincheol; Jang, Moongyu

2015-01-01

Electric and thermoelectric properties of silicide/silicon multi-layer structured devices were investigated with the variation of silicide/silicon heterojunction numbers from 3 to 12 layers. For the fabrication of silicide/silicon multi-layered structure, platinum and silicon layers are repeatedly sputtered on the (100) silicon bulk substrate and rapid thermal annealing is carried out for the silicidation. The manufactured devices show ohmic current–voltage (I–V) characteristics. The Seebeck coefficient of bulk Si is evaluated as 195.8 ± 15.3 μV/K at 300 K, whereas the 12 layered silicide/silicon multi-layer structured device is evaluated as 201.8 ± 9.1 μV/K. As the temperature increases to 400 K, the Seebeck coefficient increases to 237.2 ± 4.7 μV/K and 277.0 ± 1.1 μV/K for bulk and 12 layered devices, respectively. The increase of Seebeck coefficient in multi-layered structure is mainly attributed to the electron filtering effect due to the Schottky barrier at Pt-silicide/silicon interface. At 400 K, the thermal conductivity is reduced by about half of magnitude compared to bulk in multi-layered device which shows the efficient suppression of phonon propagation by using Pt-silicide/silicon hetero-junctions. - Highlights: • Silicide/silicon multi-layer structured is proposed for thermoelectric devices. • Electric and thermoelectric properties with the number of layer are investigated. • An increase of Seebeck coefficient is mainly attributed the Schottky barrier. • Phonon propagation is suppressed with the existence of Schottky barrier. • Thermal conductivity is reduced due to the suppression of phonon propagation

Fluorescence and thermoluminescence in silicon oxide films rich in silicon; Fluorescencia y termoluminiscencia en peliculas de oxido de silicio rico en silicio

Energy Technology Data Exchange (ETDEWEB)

Berman M, D.; Piters, T. M. [Centro de Investigacion en Fisica, Universidad de Sonora, Apdo. Postal 5-088, Hermosillo 83190, Sonora (Mexico); Aceves M, M.; Berriel V, L. R. [Instituto Nacional de Astrofisica, Optica y Electronica, Apdo. Postal 51, Puebla 72000, Puebla (Mexico); Luna L, J. A. [CIDS, Benemerita Universidad Autonoma de Puebla, Apdo. Postal 1651, Puebla 72000, Puebla (Mexico)

2009-10-15

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 {omega}-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N{sub 2} at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Neutron irradiation effects on silicon detectors structure, electrical and mechanical characteristics

International Nuclear Information System (INIS)

Rabinovich, E.; Golan, G.; Axelevich, A.; Inberg, A.; Oksman, M.; Rosenwaks, I.; Lubarsky, G.; Seidman, A.; Croitoru, N.; Rancoita, P.G.; Rattaggi, M.

1999-01-01

Neutron irradiation effects on (p-n) and Schottky-junction silicon detectors were studied. It was shown that neutron interactions with monocrystalline silicon create specific types of microstructure defects with morphology differing according to the level of neutron fluences (Φ). The isolated dislocation loops, formed by interstitial atoms were observed in microstructure images for 10 10 ≤ Φ ≤ 10 12 n/cm 2 . A strong change in the dislocation loops density and a cluster formation was observed for Φ ≥ 10 13 n/cm 2 . A drastic silicon damage was found for fluences over 10 14 n/cm 2 . These fluences created zones enriched with all types of dislocations, covering more than 50 % of the total surface area. A mechanical fragility appeared in that fluence range in a form of microcracks. 10 14 n/cm 2 appears to be a critical value of neutron irradiation because of the radiation damage described above and because the characteristics I f -V f of silicon detectors can be differentiated from those obtained at low fluences. (A.C.)

Text Summarization Evaluation: Correlating Human Performance on an Extrinsic Task with Automatic Intrinsic Metrics

National Research Council Canada - National Science Library

President, Stacy F; Dorr, Bonnie J

2006-01-01

This research describes two types of summarization evaluation methods, intrinsic and extrinsic, and concentrates on determining the level of correlation between automatic intrinsic methods and human...

Regularized strings with extrinsic curvature

International Nuclear Information System (INIS)

Ambjoern, J.; Durhuus, B.

1987-07-01

We analyze models of discretized string theories, where the path integral over world sheet variables is regularized by summing over triangulated surfaces. The inclusion of curvature in the action is a necessity for the scaling of the string tension. We discuss the physical properties of models with extrinsic curvature terms in the action and show that the string tension vanishes at the critical point where the bare extrinsic curvature coupling tends to infinity. Similar results are derived for models with intrinsic curvature. (orig.)

Radiation hardness of silicon detectors for collider experiments

International Nuclear Information System (INIS)

Golutvin, I.; Cheremukhin, A.; Fefelova, E.

1995-01-01

The silicon planar detectors before and after fast neutron irradiation ( n o> = 1.35 MeV) at room temperature have been investigated. Maximal neutron fluence has been 8 · 10 13 cm -2 . The detectors have been manufactured of the high resistivity (1 : 10 k Ohm · cm) n-type float-zone silicon (FZ-Si) with the orientation supplied by two different producers: WACKER CHEMITRONIC and Zaporojie Titanium-Magnesium Factory (ZTMF). The influence of fast neutron irradiation of the main parameters of the starting silicon before the technological high temperature treatment has been investigated as well. 30 refs., 17 figs., 5 tabs

Effect of cobalt-60 γ radiation and of thermal neutrons on high resistance P and N silicon. Possibility of obtaining a nuclear compensation for P type silicon

International Nuclear Information System (INIS)

Messier, J.

1965-11-01

Type P silicon has been compensated by the production of a controlled and uniform amount of donor atoms ( 31 P) using thermal neutrons to bring about a nuclear transformation. It is shown that it is possible in this way to reduce by a factor of about one hundred the overall concentration of residual ionised impurities in the purest crystals obtained by floating zone purification (2 x 10 12 atoms/cm 3 ). The degree compensation obtained is limited by the initial inhomogeneity of acceptor impurities which have to be compensated. Lattice defects which still remain after prolonged annealings reduce the life-time of the material to about 10 μs approximately. Particle detectors having thicknesses of 2 to 5 mm have been built by this process; they give good results, particularly at low temperatures. A study has also been made of the number and of the nature of lattice defects produced by thermal neutrons in high resistivity P and N type crystals. These defects have been compared to those produced by γ rays from 60 Co. A discussion is given of the validity of the Wertheim model concerning pronounced recombination at low temperatures (77 deg. K - 300 deg. K) of primary defect-interstitial pairs. The nature of the defects introducing energy levels into the lower half of the forbidden band has been studied. (author) [fr

Associations among teacher-student interpersonal relationships and students’ intrinsic and extrinsic motivation and academic achievement: A cross cultural study

OpenAIRE

Chan, Dawn

2016-01-01

This cross-cultural study explored associations among teacher-student relationship, students’ intrinsic and extrinsic motivation, and students’ academic achievement in grade 5 and 6 students from Vancouver, Canada (n = 102) and Hong Kong, China (n = 207). Hong Kong students perceived their teachers to be more dissatisfied, strict, admonishing, and uncertain, while Vancouver students perceived their teachers to be more helpful and friendly. Students’ levels of intrinsic and extrinsic motivatio...

MOS structures containing silicon nanoparticles for memory device applications

International Nuclear Information System (INIS)

Nedev, N; Zlatev, R; Nesheva, D; Manolov, E; Levi, Z; Brueggemann, R; Meier, S

2008-01-01

Metal-oxide-silicon structures containing layers with amorphous or crystalline silicon nanoparticles in a silicon oxide matrix are fabricated by sequential physical vapour deposition of SiO x (x = 1.15) and RF sputtering of SiO 2 on n-type crystalline silicon, followed by high temperature annealing in an inert gas ambient. Depending on the annealing temperature, 700 deg. C or 1000 deg. C, amorphous or crystalline silicon nanoparticles are formed in the silicon oxide matrix. The annealing process is used not only for growing nanoparticles but also to form a dielectric layer with tunnelling thickness at the silicon/insulator interface. High frequency C-V measurements demonstrate that both types of structures can be charged negatively or positively by applying a positive or negative voltage on the gate. The structures with amorphous silicon nanoparticles show several important advantages compared to the nanocrystal ones, such as lower defect density at the interface between the crystalline silicon wafer and the tunnel silicon oxide, better retention characteristics and better reliability

Extrinsic motivation and job satisfaction of teachers' in public post ...

African Journals Online (AJOL)

This study was aimed at evaluating the relationship between extrinsic motivation and the job satisfaction of teachers' in public post primary schools in Cross River State, Nigeria. A sample of 125 teachers' was randomly drawn for the study. A four point likert-type questionnaire was used to gather data which was analyzed ...

High power n-type metal-wrap-through cells and modules using industrial processes

Energy Technology Data Exchange (ETDEWEB)

Guillevin, N.; Heurtault, B.J.B.; Geerligs, L.J.; Van Aken, B.B.; Bennett, I.J.; Jansen, M.J.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Jianming, Wang; Ziqian, Wang; Jinye, Zhai; Zhiliang, Wan; Shuquan, Tian; Wenchao, Zhao; Zhiyan, Hu; Gaofei, Li; Bo, Yu; Jingfeng, Xiong [Yingli Green Energy Holding Co.,Ltd. 3399 North Chaoyang Avenue, Baoding (China)

2013-10-15

This paper reviews our recent progress in the development of metal wrap through (MWT) cells and modules, produced from n-type Czochralski silicon wafers. The use of n-type silicon as base material allows for high efficiencies: for front emitter-contacted industrial cells, efficiencies above 20% have been reported. N-type MWT (nMWT) cells produced by industrial process technologies allow even higher efficiency due to reduced front metal coverage. Based on the same industrial technology, the efficiency of the bifacial n-MWT cells exceeds the efficiency of the n-type front-and-rear contact and bifacial 'Pasha' technology (n-Pasha) by 0.1-0.2% absolute, with a maximum nMWT efficiency of 20.1% so far. Additionally, full back-contacting of the MWT cells in a module results in reduced cell to module (CTM) fill factor losses. In a direct 60-cell module performance comparison, the n-MWT module, based on integrated backfoil, produced 3% higher power output than the comparable tabbed front emitter-contacted n-Pasha module. Thanks to reduced resistive losses in copper circuitry on the backfoil compared to traditional tabs, the CTM FF loss of the MWT module was reduced by about 2.2%abs. compared to the tabbed front emitter contact module. A full-size module made using MWT cells of 19.6% average efficiency resulted in a power output close to 280W. Latest results of the development of the n-MWT technology at cell and module level are discussed in this paper, including a recent direct comparison run between n-MWT and n-Pasha cells and results of n-MWT cells from 140{mu}m thin mono-crystalline wafers, with only very slight loss (1% of Isc) for the thin cells. Also reverse characteristics and effects of reverse bias for extended time at cell and module level are reported, where we find a higher tolerance of MWT modules than tabbed front contact modules for hotspots.

Quantum conductance in silicon quantum wires

CERN Document Server

Bagraev, N T; Klyachkin, L E; Malyarenko, A M; Gehlhoff, W; Ivanov, V K; Shelykh, I A

2002-01-01

The results of investigations of electron and hole quantum conductance staircase in silicon quantum wires are presented. The characteristics of self-ordering quantum wells of n- and p-types, which from on the silicon (100) surface in the nonequilibrium boron diffusion process, are analyzed. The results of investigations of the quantum conductance as the function of temperature, carrier concentration and modulation degree of silicon quantum wires are given. It is found out, that the quantum conductance of the one-dimensional channels is observed, for the first time, at an elevated temperature (T >= 77 K)

STM-excited luminescence of porous and spark-processed silicon

International Nuclear Information System (INIS)

Andrienko, I.; Kuznetsov, V.; Yuan, J.; Haneman, D.

1998-01-01

Full text: Scanning tunneling microscopy (STM) permits highly local electronic excitation of light emission (LE) from the surface of silicon. Measuring STM LE, one can study simultaneously both the topography and the luminescence properties of areas down to nm dimensions and thus make conclusions about the luminescence mechanism of the material. We have built an STM spectroscopy system which allows measurement of spectra of visible light emitted from areas as small as 13 x 13 nm 2 (porous silicon) and 10 x 10 nm 2 (spark-processed silicon). Porous silicon shows a broad emission band centered at 630 nm, and spark-processed silicon, one at 690 nm. The STM LE spectra of spark-processed silicon obtained for the first time. We have found that visible light is emitted only from areas containing nanometer-scale structures down to around 2 nm in diameter. STM LE occurs under negative bias voltage applied to the tip, i.e. when electrons are injected into the sample. Other workers used p-type silicon for the sample preparations, but it has been found that STM LE can be induced also from n-type silicon. Furthermore, we have shown that STM LE spectra can be resolved using much lover voltages and tunneling currents: -(7-9) V and 25 - 50 nA vs -(25-50) V and 100 nA. To consider different excitation mechanisms, the STM LE measurements are compared with photoluminescence and electroluminescence spectra of similar samples. We suggest that excitation of individual quantum confinement structures has been observed

Microstructure and oxidative degradation behavior of silicon carbide fiber Hi-Nicalon type S

International Nuclear Information System (INIS)

Takeda, M.; Urano, A.; Sakamoto, J.; Imai, Y.

1998-01-01

Polycarbosilane-derived SiC fibers, Nicalon, Hi-Nicalon, and Hi-Nicalon type S were exposed for 1 to 100 h at 1273-1773 K in air. Oxide layer growth and tensile strength change of these fibers were examined after the oxidation test. As a result, three types of SiC fibers decreased their strength as oxide layer thickness increased. Fracture origins were determined at near the oxide layer-fiber interface. Adhered fibers arised from softening of silicon oxide at high temperature were also observed. In this study, Hi-Nicalon type S showed better oxidation resistance than other polycarbosilane-derived SiC fibers after 1673 K or higher temperature exposure in air for 10 h. This result was explained by the poreless silicon oxide layer structure of Hi-Nicalon type S. (orig.)

Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Goto, Masaki; Amano, Ryo; Shimoda, Naotaka [Graduate School of Automotive Science, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Kato, Yoshimine, E-mail: yoshimine.kato@zaiko.kyushu-u.ac.jp [Department of Materials Science and Engineering, Kyushu University, Nishiku, Fukuoka 819-0395 (Japan); Teii, Kungen [Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2014-04-14

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 10{sup 7} at room temperature and 10{sup 4} even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

Extrinsic value orientation and affective forecasting: overestimating the rewards, underestimating the costs.

Science.gov (United States)

Sheldon, Kennon M; Gunz, Alexander; Nichols, Charles P; Ferguson, Yuna

2010-02-01

We examined affective forecasting errors as a possible explanation of the perennial appeal of extrinsic values and goals. Study 1 found that although people relatively higher in extrinsic (money, fame, image) compared to intrinsic (growth, intimacy, community) value orientation (REVO) are less happy, they nevertheless believe that attaining extrinsic goals offers a strong potential route to happiness. Study 2's longitudinal experimental design randomly assigned participants to pursue either 3 extrinsic or 3 intrinsic goals over 4 weeks, and REVO again predicted stronger forecasts regarding extrinsic goals. However, not even extrinsically oriented participants gained well-being benefits from attaining extrinsic goals, whereas all participants tended to gain in happiness from attaining intrinsic goals. Study 3 showed that the effect of REVO on forecasts is mediated by extrinsic individuals' belief that extrinsic goals will satisfy autonomy and competence needs. It appears that some people overestimate the emotional benefits of achieving extrinsic goals, to their potential detriment.

Silicon diode for measurement of integral neutron dose and method of its production

International Nuclear Information System (INIS)

Frank, H.; Seda, J.; Trousil, J.

1978-01-01

The silicon diode consists of an N or P type silicon plate having a specific resistance exceeding 10 ohm.cm and minority carrier life exceeding 100μs. The plate thickness is a quintuple to a ten-tuple of the diffusion length and the plate consists of layers. Ions of, eg., boron, at a concentration exceeding 10 14 cm -2 are implanted into the P + type silicon layer and a layer of a metal, eg., nickel, is deposited onto it. Ions of eg., phosphorus, at a concentration exceeding 10 14 cm -2 are implanted in the N + type layer and a metal layer, eg., nickel is again depositeJ onto it. Implantation proceeds at an ion acceleration voltage of 10 to 200 kV. Metal layer deposition follows, and simultaneously with annealing of the P + and N + types of silicon layers, the metal layers are annealed at 600 to 900 degC for 1 to 60 minutes with subsequent temperature decrease at a rate less than 10 degC/min, down to a temperature of 300 degC. (J.P.)

Influence of the silicon concentration on the optical and electrical properties of reactively sputtered Zr-Si-N nanocomposite coatings

International Nuclear Information System (INIS)

Pilloud, D.; Pierson, J.F.; Pichon, L.

2006-01-01

Zr-Si-N films were deposited on silicon and X38CrMoV5 steel substrates by sputtering composite Zr-Si targets in reactive Ar-N 2 mixture. The silicon concentration in the deposited films was adjusted by the variation of the number of Si chips located on the target erosion zone. As a function of the silicon content, the films exhibited the following structures: insertion of Si into the ZrN lattice, nanocomposite (nc-ZrN/a-SiN x ) and an amorphous-like structure. Addition of silicon into ZrN-based coatings induced a lost of the golden aspect due to the decrease of the metallic behaviour. This result was confirmed by ellipsometric measurements. The films refractive index increased with the silicon concentration. On the other hand, a continuous decrease of the extinction coefficient was noticed. The effect of the silicon content on the optical properties of Zr-Si-N films was discussed as a function of the films structure and the occurrence of new optical absorptions due to the silicon chemical bonds. Finally, the evolution of the films electrical resistivity was discussed in connection to the films structure changes

Potassium-doped n-type bilayer graphene

Science.gov (United States)

Yamada, Takatoshi; Okigawa, Yuki; Hasegawa, Masataka

2018-01-01

Potassium-doped n-type bilayer graphene was obtained. Chemical vapor deposited bilayer and single layer graphene on copper (Cu) foils were used. After etching of Cu foils, graphene was dipped in potassium hydroxide aqueous solutions to dope potassium. Graphene on silicon oxide was characterized by X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), and Raman spectroscopy. Both XPS and EDX spectra indicated potassium incorporation into the bilayer graphene via intercalation between the graphene sheets. The downward shift of the 2D peak position of bilayer graphene after the potassium hydroxide (KOH) treatment was confirmed in Raman spectra, indicating that the KOH-treated bilayer graphene was doped with electrons. Electrical properties were measured using Hall bar structures. The Dirac points of bilayer graphene were shifted from positive to negative by the KOH treatment, indicating that the KOH-treated bilayer graphene was n-type conduction. For single layer graphene after the KOH treatment, although electron doping was confirmed from Raman spectra, the peak of potassium in the X-ray photoelectron spectroscopy (XPS) spectrum was not detected. The Dirac points of single layer graphene with and without the KOH treatment showed positive.

Type I Clathrates as Novel Silicon Anodes: An Electrochemical and Structural Investigation

OpenAIRE

Li, Ying; Raghavan, Rahul; Wagner, Nicholas A.; Davidowski, Stephen K.; Baggetto, Lo?c; Zhao, Ran; Cheng, Qian; Yarger, Jeffery L.; Veith, Gabriel M.; Ellis?Terrell, Carol; Miller, Michael A.; Chan, Kwai S.; Chan, Candace K.

2015-01-01

Silicon clathrates contain cage?like structures that can encapsulate various guest atoms or molecules. An electrochemical evaluation of type I silicon clathrates based on Ba8Al y Si46?y as the anode material for lithium?ion batteries is presented here. Postcycling characterization with nuclear magnetic resonance and X?ray diffraction shows no discernible structural or volume changes even after electrochemical insertion of 44 Li (?1 Li/Si) into the clathrate structure. The observed properties ...

Measurements of possible type inversion in silicon junction detectors by fast neutron irradiation

International Nuclear Information System (INIS)

Li, Z.; Kraner, H.W.

1991-05-01

The successful application of silicon position sensitive detectors in experiments at the SSC or LHC depends on an accurate assessment of the radiation tolerance of this detector species. In particular, fast neutrons (E av = 1 MeV) produce bulk displacement damage that is projected, from estimated fluences, to cause increased generation (leakage) current, charge collection deficiencies, resistivity changes and possibly semiconductor type change or inversion. Whereas the leakage current increase was believed to be the major concern for estimated fluences of 10 12 n/cm 2 experiment year at the initial SSC luminosity of 10 33 /cm 2 -sec, increased luminosity and exposure time has raised the possible exposure to 10 14 n/cm 2 , which opens the door for the several other radiation effects suggested above to play observable and significant roles in detector degradation or change. 17 refs., 19 figs

Off-stoichiometric silver antimony telluride: An experimental study of transport properties with intrinsic and extrinsic doping

Directory of Open Access Journals (Sweden)

Michele D. Nielsen

2015-05-01

Full Text Available AgSbTe2 is a thermoelectric semiconductor with an intrinsically low thermal conductivity and a valence band structure that is favorable to obtaining a high thermoelectric figure of merit zT. It also has a very small energy gap Eg ∼ 7.6 ± 3 meV. As this gap is less than the thermal excitation energy at room temperature, near-intrinsic AgSbTe2 is a two carrier system having both holes (concentration p and electrons (n. Good thermoelectric performance requires heavy p-type doping (p > > n. This can be achieved with native defects or with extrinsic doping, e.g. with transition metal element. The use of defect doping is complicated by the fact that many of the ternary Ag-Sb-Te and pseudo-binary Sb2Te3-Ag2Te phase diagrams are contradictory. This paper determines the compositional region most favorable to creating a single phase material. Through a combination of intrinsic and extrinsic doping, values of zT > 1 are achieved, though not on single-phased material. Additionally, we show that thermal conductivity is not affected by defects, further demonstrating that the low lattice thermal conductivity of I-V-VI2 materials is due to an intrinsic mechanism, insensitive to changes in defect structure.

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

Directory of Open Access Journals (Sweden)

Sandro Rao

2016-01-01

Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

Distinct molecular signatures of mild extrinsic and intrinsic atopic dermatitis

DEFF Research Database (Denmark)

Martel, Britta Cathrina; Litman, Thomas; Hald, Andreas

2016-01-01

Atopic dermatitis (AD) is a common inflammatory skin disease with underlying defects in epidermal function and immune responses. In this study, we used microarray analysis to investigate differences in gene expression in lesional skin from patients with mild extrinsic or intrinsic AD compared...... with mild extrinsic and intrinsic AD similar to previous reports for severe AD. Interestingly, expression of genes involved in inflammatory responses in intrinsic AD resembled that of psoriasis more than that of extrinsic AD. Overall, differences in expression of inflammation-associated genes found among...... patients with mild intrinsic and extrinsic AD correlated with previous findings for patients with severe intrinsic and extrinsic AD....

Electrical Properties Of Amorphous Selenium (aSe)/p-Type Silicon ...

African Journals Online (AJOL)

aSe) on four chemically etched p-type silicon crystals (pSi) each of 5Ω-cm resistivity and carrier concentration of 2.8x1015cm-3. Two of the pSi crystals have surface orientation of (111) while the other two crystals have (100) surface orientation.

Intrinsic and Extrinsic Neuromodulation of Olfactory Processing.

Science.gov (United States)

Lizbinski, Kristyn M; Dacks, Andrew M

2017-01-01

Neuromodulation is a ubiquitous feature of neural systems, allowing flexible, context specific control over network dynamics. Neuromodulation was first described in invertebrate motor systems and early work established a basic dichotomy for neuromodulation as having either an intrinsic origin (i.e., neurons that participate in network coding) or an extrinsic origin (i.e., neurons from independent networks). In this conceptual dichotomy, intrinsic sources of neuromodulation provide a "memory" by adjusting network dynamics based upon previous and ongoing activation of the network itself, while extrinsic neuromodulators provide the context of ongoing activity of other neural networks. Although this dichotomy has been thoroughly considered in motor systems, it has received far less attention in sensory systems. In this review, we discuss intrinsic and extrinsic modulation in the context of olfactory processing in invertebrate and vertebrate model systems. We begin by discussing presynaptic modulation of olfactory sensory neurons by local interneurons (LNs) as a mechanism for gain control based on ongoing network activation. We then discuss the cell-class specific effects of serotonergic centrifugal neurons on olfactory processing. Finally, we briefly discuss the integration of intrinsic and extrinsic neuromodulation (metamodulation) as an effective mechanism for exerting global control over olfactory network dynamics. The heterogeneous nature of neuromodulation is a recurring theme throughout this review as the effects of both intrinsic and extrinsic modulation are generally non-uniform.

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

Science.gov (United States)

Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

1980-01-01

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Superparamagnetic iron oxide nanoparticle attachment on array of micro test tubes and microbeakers formed on p-type silicon substrate for biosensor applications

Directory of Open Access Journals (Sweden)

Raja Sufi

2011-01-01

Full Text Available Abstract A uniformly distributed array of micro test tubes and microbeakers is formed on a p-type silicon substrate with tunable cross-section and distance of separation by anodic etching of the silicon wafer in N, N-dimethylformamide and hydrofluoric acid, which essentially leads to the formation of macroporous silicon templates. A reasonable control over the dimensions of the structures could be achieved by tailoring the formation parameters, primarily the wafer resistivity. For a micro test tube, the cross-section (i.e., the pore size as well as the distance of separation between two adjacent test tubes (i.e., inter-pore distance is typically approximately 1 μm, whereas, for a microbeaker the pore size exceeds 1.5 μm and the inter-pore distance could be less than 100 nm. We successfully synthesized superparamagnetic iron oxide nanoparticles (SPIONs, with average particle size approximately 20 nm and attached them on the porous silicon chip surface as well as on the pore walls. Such SPION-coated arrays of micro test tubes and microbeakers are potential candidates for biosensors because of the biocompatibility of both silicon and SPIONs. As acquisition of data via microarray is an essential attribute of high throughput bio-sensing, the proposed nanostructured array may be a promising step in this direction.

Modification of the properties of porous silicon on adsorption of iodine molecules

International Nuclear Information System (INIS)

Vorontsov, A. S.; Osminkina, L. A.; Tkachenko, A. E.; Konstantinova, E. A.; Elenskii, V. G.; Timoshenko, V. Yu.; Kashkarov, P. K.

2007-01-01

Infrared spectroscopy and electron spin resonance measurements are used to study the properties of porous silicon layers on adsorption of the I 2 iodine molecules. The layers are formed on the p-an n-Si single-crystal wafers. It is established that, in the atmosphere of I 2 molecules, the charge-carrier concentration in the layers produced on the p-type wafers can be noticeably increased: the concentration of holes can attain values on the order of ∼10 18 -10 19 cm -3 . In porous silicon layers formed on the n-type wafers, the adsorption-induced inversion of the type of charge carriers and the partial substitution of silicon-hydrogen bonds by silicon-iodine bonds are observed. A decrease in the concentration of surface paramagnetic defects, P b centers, is observed in the samples with adsorbed iodine. The experimental data are interpreted in the context of the model in which it is assumed that both deep and shallow acceptor states are formed at the surface of silicon nanocrystals upon the adsorption of I 2 molecules

Short p-type silicon microstrip detectors in 3D-stc technology

Energy Technology Data Exchange (ETDEWEB)

Eckert, S. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany)], E-mail: simon.eckert@physik.uni-freiburg.de; Jakobs, K.; Kuehn, S.; Parzefall, U. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany); Dalla-Betta, G.-F.; Zoboli, A. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita degli Studi di Trento, via Sommarive 14, I-38050 Povo di Trento (Italy); Pozza, A.; Zorzi, N. [FBK-irst Trento, Microsystems Division, via Sommarive 18, I-38050 Povo di Trento (Italy)

2008-10-21

The luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, will constitute an extremely challenging radiation environment for tracking detectors. Significant improvements in radiation hardness are needed to cope with the increased radiation dose, requiring new tracking detectors. In the upgraded ATLAS detector the region from 20 to 50 cm distance to the beam will be covered by silicon strip detectors (SSD) with short strips. These will have to withstand a 1 MeV neutron equivalent fluence of about 1x10{sup 15}n{sub eq}/cm{sup 2}, hence extreme radiation resistance is necessary. For the short strips, we propose to use SSD realised in the radiation tolerant 3D technology, where rows of columns-etched into the silicon bulk-are joined together to form strips. To demonstrate the feasibility of 3D SSD for the sLHC, we have built prototype modules using 3D-single-type-column (stc) SSD with short strips and front-end electronics from the present ATLAS SCT. The modules were read out with the SCT Data Acquisition system and tested with an IR-laser. We report on the performance of these 3D modules, in particular the noise at 40 MHz which constitutes a measurement of the effective detector capacitance. Conclusions about options for using 3D SSD detectors for tracking at the sLHC are drawn.

The processing and potential applications of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Syyuan Shieh.

1992-07-01

Stability of a cylindrical pore under the influence of surface energy is important for porous silicon (PS) processing in the integrated circuit industry. Once the zig-zag cylindrical pores of porous silicon or oxidized porous silicon (OPS) are unstable and breakup into rows of isolated spherical pores, oxidation of PS and densification/nitridation of OPS become difficult. Swing to difficulty transport of reactant gas (O{sub 2}, NH{sub 3}) or the trapped gas (for densification of OPS). A first order analysis of the stability of a cylindrical pore or cylinder is considered first. Growth of small sinusoidal perturbations by viscous flow or evaporation/condensation result in dependence of perturbation growth rate on perturbation wavelength. Rapid thermal oxidation (RTO) of porous silicon is proposed as an alternative for the tedious two-step 300 and 800C oxidation process. Transmission electron microscopy, energy dispersive spectroscopy ESCA are used for quality control. Also, rapid thermal nitridation of oxidized porous silicon in ammonia is proposed to enhance OPS resistance to HF solution. Pores breakup of OPS results in a trapped gas problem during densification. Wet helium is proposed as OPS densification ambient gas to shorten densification time. Finally, PS is proposed to be an extrinsic gettering center in silicon wafers. The suppression of oxidation-induced stacking faults is used to demonstrate the gettering ability. Possible mechanism is discussed.

The processing and potential applications of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Shieh, Syyuan [Univ. of California, Berkeley, CA (United States)

1992-07-01

Stability of a cylindrical pore under the influence of surface energy is important for porous silicon (PS) processing in the integrated circuit industry. Once the zig-zag cylindrical pores of porous silicon or oxidized porous silicon (OPS) are unstable and breakup into rows of isolated spherical pores, oxidation of PS and densification/nitridation of OPS become difficult. Swing to difficulty transport of reactant gas (O₂, NH₃) or the trapped gas (for densification of OPS). A first order analysis of the stability of a cylindrical pore or cylinder is considered first. Growth of small sinusoidal perturbations by viscous flow or evaporation/condensation result in dependence of perturbation growth rate on perturbation wavelength. Rapid thermal oxidation (RTO) of porous silicon is proposed as an alternative for the tedious two-step 300 and 800C oxidation process. Transmission electron microscopy, energy dispersive spectroscopy ESCA are used for quality control. Also, rapid thermal nitridation of oxidized porous silicon in ammonia is proposed to enhance OPS resistance to HF solution. Pores breakup of OPS results in a trapped gas problem during densification. Wet helium is proposed as OPS densification ambient gas to shorten densification time. Finally, PS is proposed to be an extrinsic gettering center in silicon wafers. The suppression of oxidation-induced stacking faults is used to demonstrate the gettering ability. Possible mechanism is discussed.

Symmetry and structure of N-O shallow donor complexes in silicon

International Nuclear Information System (INIS)

Alt, H.Ch.; Wagner, H.E.

2012-01-01

Shallow donors in silicon related to nitrogen-oxygen complexes have been investigated by piezospectroscopy of their hydrogenic transitions in the far infrared. Complete stress dependences up to 0.25 GPa were obtained for the 1s→2p 0 and 1s→2p ± transitions of the most prominent members of the (N, O)-family, N-O-3 and N-O-5. Very unusual for shallow donors in silicon, the symmetry of the ground state wave function is T 2 -like. The lifting of orientational degeneracy for stress in the 〈1 0 0〉, 〈1 1 1〉, and 〈1 1 0〉 directions is compatible with a C 2v defect symmetry. Data from the other species of the (N, O)-family are indicative for the same symmetry. The microscopic structure of these centers, in part contradictory to present theoretical models, is discussed.

Doping of silicon carbide by ion implantation

International Nuclear Information System (INIS)

Gimbert, J.

1999-01-01

It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation

International Nuclear Information System (INIS)

Pomaska, M.; Beyer, W.; Neumann, E.; Finger, F.; Ding, K.

2015-01-01

Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiO x :H/intrinsic a-SiO x :H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiO x :H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells. - Highlights: • High surface passivation quality was preserved after μc-SiC:H<n> deposition. • μc-SiC:H<n>/μc-SiO x :H<n>/a-SiO x :H stack a promising front layer configuration • Void expansion at a-SiO x :H/c-Si interface for deteriorated surface passivation • μc-SiC:H<n> provides a high transparency and electrical conductivity.