Additional ion bombardment in PVD processes generated by a superimposed pulse bias voltage

International Nuclear Information System (INIS)

Olbrich, W.; Kampschulte, G.

1993-01-01

The superimposed pulse bias voltage is a tool to apply an additional ion bombardment during deposition in physical vapour deposition (PVD) processes. It is generated by the combination of a d.c. ground voltage and a higher d.c. pulse voltage. Using a superimposed pulse bias voltage in ion-assisted PVD processes effects an additional all-around ion bombardment on the surface with ions of higher energy. Both metal and reactive or inert-gas ions are accelerated to the surface. The basic principles and important characteristics of this newly developed process such as ion fluxes or deposition rates are shown. Because of pulsing the high voltage, the deposition temperature does not increase much. The adhesion, structure, morphology and internal stresses are influenced by these additional ion impacts. The columnar growth of the deposited films could be suppressed by using the superimposed pulse bias voltage without increasing the deposition temperature. Different metallizations (Cr and Cu) produced by arc and sputter ion plating are investigated. Carbon-fibre-reinforced epoxy are coated with PVD copper films for further treatment in electrochemical processes. (orig.)

Bias voltage effect on electron tunneling across a junction with a ferroelectric–ferromagnetic two-phase composite barrier

International Nuclear Information System (INIS)

Wang Jian; Ju Sheng; Li, Z.Y.

2012-01-01

The effect of bias voltage on electron tunneling across a junction with a ferroelectric–ferromagnetic composite barrier is investigated theoretically. Because of the inversion symmetry breaking of the spontaneous ferroelectric polarization, bias voltage dependence of the electron tunneling shows significant differences between the positive bias and the negative one. The differences of spin filtering or tunnel magnetoresistance increase with the increasing absolute value of bias voltage. Such direction preferred electron tunneling is found intimately related with the unusual asymmetry of the electrical potential profile in two-phase composite barrier and provides a unique change to realize rectifying functions in spintronics. - Highlights: ► Electron tunneling across a ferroelectric–ferromagnetic composite barrier junction. ► TMR effect is different under the same value but opposite direction bias voltage. ► This directionality of the electron tunneling enhances with increasing bias voltage.

Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

International Nuclear Information System (INIS)

Lytvynenko, Ia.M.; Hauet, T.; Montaigne, F.; Bibyk, V.V.; Andrieu, S.

2015-01-01

Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height

Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

DEFF Research Database (Denmark)

Gloos, K.; Utko, P.; Aagesen, M.

2006-01-01

We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

Improvement of stability of sinusoidally driven atmospheric pressure plasma jet using auxiliary bias voltage

Directory of Open Access Journals (Sweden)

Hyun-Jin Kim

2015-12-01

Full Text Available In this study, we have proposed the auxiliary bias pulse scheme to improve the stability of atmospheric pressure plasma jets driven by an AC sinusoidal waveform excitation source. The stability of discharges can be significantly improved by the compensation of irregular variation in memory voltage due to the effect of auxiliary bias pulse. From the parametric study, such as the width, voltage, and onset time of auxiliary bias pulse, it has been demonstrated that the auxiliary bias pulse plays a significant role in suppressing the irregular discharges caused by the irregular variation in memory voltage and stable discharge can be initiated with the termination of the auxiliary bias pulse. As a result of further investigating the effects of the auxiliary pulse scheme on the jet stability under various process conditions such as the distance between the jet head and the counter electrode, and carrier gas flow, the jet stability can be improved by adjusting the amplitude and number of the bias pulse depending on the variations in the process conditions.

A voltage biased superconducting quantum interference device bootstrap circuit

International Nuclear Information System (INIS)

Xie Xiaoming; Wang Huiwu; Wang Yongliang; Dong Hui; Jiang Mianheng; Zhang Yi; Krause, Hans-Joachim; Braginski, Alex I; Offenhaeusser, Andreas; Mueck, Michael

2010-01-01

We present a dc superconducting quantum interference device (SQUID) readout circuit operating in the voltage bias mode and called a SQUID bootstrap circuit (SBC). The SBC is an alternative implementation of two existing methods for suppression of room-temperature amplifier noise: additional voltage feedback and current feedback. Two circuit branches are connected in parallel. In the dc SQUID branch, an inductively coupled coil connected in series provides the bias current feedback for enhancing the flux-to-current coefficient. The circuit branch parallel to the dc SQUID branch contains an inductively coupled voltage feedback coil with a shunt resistor in series for suppressing the preamplifier noise current by increasing the dynamic resistance. We show that the SBC effectively reduces the preamplifier noise to below the SQUID intrinsic noise. For a helium-cooled planar SQUID magnetometer with a SQUID inductance of 350 pH, a flux noise of about 3 μΦ 0 Hz -1/2 and a magnetic field resolution of less than 3 fT Hz -1/2 were obtained. The SBC leads to a convenient direct readout electronics for a dc SQUID with a wider adjustment tolerance than other feedback schemes.

A 50–60 GHz mm-wave rectifier with bulk voltage bias in 65-nm CMOS

NARCIS (Netherlands)

Gao, H.; Matters-Kammerer, M.; Harpe, P.; Baltus, P.

2016-01-01

This letter presents a 50∼60 GHz fully integrated 3-stage rectifier with bulk voltage bias for threshold voltage modulation in a 65-nm CMOS technology, which can be integrated in a mm-wave hybrid rectifier structure as the main rectifier. In this letter, the new technique of bulk voltage bias is

An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2011-01-01

Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

Linearity optimizations of analog ring resonator modulators through bias voltage adjustments

Science.gov (United States)

Hosseinzadeh, Arash; Middlebrook, Christopher T.

2018-03-01

The linearity of ring resonator modulator (RRM) in microwave photonic links is studied in terms of instantaneous bandwidth, fabrication tolerances, and operational bandwidth. A proposed bias voltage adjustment method is shown to maximize spur-free dynamic range (SFDR) at instantaneous bandwidths required by microwave photonic link (MPL) applications while also mitigating RRM fabrication tolerances effects. The proposed bias voltage adjustment method shows RRM SFDR improvement of ∼5.8 dB versus common Mach-Zehnder modulators at 500 MHz instantaneous bandwidth. Analyzing operational bandwidth effects on SFDR shows RRMs can be promising electro-optic modulators for MPL applications which require high operational frequencies while in a limited bandwidth such as radio-over-fiber 60 GHz wireless network access.

Quantum dynamics of a Josephson junction driven cavity mode system in the presence of voltage bias noise

Science.gov (United States)

Wang, Hui; Blencowe, M. P.; Armour, A. D.; Rimberg, A. J.

2017-09-01

We give a semiclassical analysis of the average photon number as well as photon number variance (Fano factor F ) for a Josephson junction (JJ) embedded microwave cavity system, where the JJ is subject to a fluctuating (i.e., noisy) bias voltage with finite dc average. Through the ac Josephson effect, the dc voltage bias drives the effectively nonlinear microwave cavity mode into an amplitude squeezed state (F Armour et al., Phys. Rev. Lett. 111, 247001 (2013), 10.1103/PhysRevLett.111.247001], but bias noise acts to degrade this squeezing. We find that the sensitivity of the Fano factor to bias voltage noise depends qualitatively on which stable fixed point regime the system is in for the corresponding classical nonlinear steady-state dynamics. Furthermore, we show that the impact of voltage bias noise is most significant when the cavity is excited to states with large average photon number.

Investigations of a voltage-biased microwave cavity for quantum measurements of nanomechanical resonators

Science.gov (United States)

Rouxinol, Francisco; Hao, Hugo; Lahaye, Matt

2015-03-01

Quantum electromechanical systems incorporating superconducting qubits have received extensive interest in recent years due to their promising prospects for studying fundamental topics of quantum mechanics such as quantum measurement, entanglement and decoherence in new macroscopic limits, also for their potential as elements in technological applications in quantum information network and weak force detector, to name a few. In this presentation we will discuss ours efforts toward to devise an electromechanical circuit to strongly couple a nanomechanical resonator to a superconductor qubit, where a high voltage dc-bias is required, to study quantum behavior of a mechanical resonator. Preliminary results of our latest generation of devices integrating a superconductor qubit into a high-Q voltage biased microwave cavities are presented. Developments in the circuit design to couple a mechanical resonator to a qubit in the high-Q voltage bias CPW cavity is discussed as well prospects of achieving single-phonon measurement resolution. National Science Foundation under Grant No. DMR-1056423 and Grant No. DMR-1312421.

Impurity effects on electrical conductivity of doped bilayer graphene in the presence of a bias voltage

International Nuclear Information System (INIS)

Lotfi, E; Rezania, H; Arghavaninia, B; Yarmohammadi, M

2016-01-01

We address the electrical conductivity of bilayer graphene as a function of temperature, impurity concentration, and scattering strength in the presence of a finite bias voltage at finite doping, beginning with a description of the tight-binding model using the linear response theory and Green’s function approach. Our results show a linear behavior at high doping for the case of high bias voltage. The effects of electron doping on the electrical conductivity have been studied via changing the electronic chemical potential. We also discuss and analyze how the bias voltage affects the temperature behavior of the electrical conductivity. Finally, we study the behavior of the electrical conductivity as a function of the impurity concentration and scattering strength for different bias voltages and chemical potentials respectively. The electrical conductivity is found to be monotonically decreasing with impurity scattering strength due to the increased scattering among electrons at higher impurity scattering strength. (paper)

Effect of bias voltage on microstructure and mechanical properties of ...

Indian Academy of Sciences (India)

In the present study, authors report on the effect that substrate bias voltage has on the ... ings and at high deposition rates, having a wide range of .... The coatings were then ultra- ... The results of a typical compositional analysis carried out.

Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

Science.gov (United States)

Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.;

Simulations of momentum transfer process between solar wind plasma and bias voltage tethers of electric sail thruster

Science.gov (United States)

Xia, Guangqing; Han, Yajie; Chen, Liuwei; Wei, Yanming; Yu, Yang; Chen, Maolin

2018-06-01

The interaction between the solar wind plasma and the bias voltage of long tethers is the basic mechanism of the electric sail thruster. The momentum transfer process between the solar wind plasma and electric tethers was investigated using a 2D full particle PIC method. The coupled electric field distribution and deflected ion trajectory under different bias voltages were compared, and the influence of bias voltage on momentum transfer process was analyzed. The results show that the high potential of the bias voltage of long tethers will slow down, stagnate, reflect and deflect a large number of ions, so that ion cavities are formed in the vicinity of the tether, and the ions will transmit the axial momentum to the sail tethers to produce the thrust. Compared to the singe tether, double tethers show a better thrust performance.

Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

International Nuclear Information System (INIS)

Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

2014-01-01

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V bias ) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V bias for Ga 0.51 In 0.49 P/Ga 0.99 In 0.01 As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V bias measurements. The profile of SR−V bias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell

Effects of the location of a biased limiter on turbulent transport in the IR-T1 tokamak plasma

International Nuclear Information System (INIS)

Alipour, R.; Ghoranneviss, M.; Salar Elahi, A.; Meshkani, S.

2017-01-01

Plasma confinement plays an important role in fusion study. Applying an external voltage using limiter biasing system is proved to be an efficient approach for plasma confinement. In this study, the position of the limiter biasing system was changed to investigate the effect of applying external voltages at different places to the plasma. The external voltages of ±200 V were applied at the different positions of edge, 5 mm and 10 mm inside the plasma. Then, the main plasma parameters were measured. The results show that the poloidal turbulent transport and radial electric field increased about 25-35% and 35-45%, respectively (specially when the limiter biasing system was placed 5 mm inside the plasma). Also, the Reynolds stress has experienced its maximum reduction about 5-10% when the limiter biasing system was at 5 mm inside the plasma and the voltage of +200 V was applied to the plasma. When the limiter biasing system move 10 mm inside the plasma, the main plasma parameters experienced more instabilities and fluctuations than other positions. (authors)

Influence of substrate bias voltage on structure and properties of the CrAlN films deposited by unbalanced magnetron sputtering

Science.gov (United States)

Lv, Yanhong; Ji, Li; Liu, Xiaohong; Li, Hongxuan; Zhou, Huidi; Chen, Jianmin

2012-02-01

The CrAlN films were deposited on silicon and stainless steel substrates by unbalanced magnetron sputtering system. The influence of substrate bias on deposition rate, composition, structure, morphology and properties of the CrAlN films was investigated. The results showed that, with the increase of the substrate bias voltage, the deposition rate decreased accompanied by a change of the preferred orientation of the CrAlN film from (2 2 0) to (2 0 0). The grain size and the average surface roughness of the CrAlN films declined as the bias voltage increases above -100 V. The morphology of the films changed from obviously columnar to dense glass-like structure with the increase of the bias voltage from -50 to -250 V. Meanwhile, the films deposited at moderate bias voltage had better mechanical and tribological properties, while the films deposited at higher bias voltage showed better corrosion resistance. It was found that the corrosion resistance improvement was not only attributed to the low pinhole density of the film, but also to chemical composition of films.

Accurate reconstruction of the jV-characteristic of organic solar cells from measurements of the external quantum efficiency

Science.gov (United States)

Meyer, Toni; Körner, Christian; Vandewal, Koen; Leo, Karl

2018-04-01

In two terminal tandem solar cells, the current density - voltage (jV) characteristic of the individual subcells is typically not directly measurable, but often required for a rigorous device characterization. In this work, we reconstruct the jV-characteristic of organic solar cells from measurements of the external quantum efficiency under applied bias voltages and illumination. We show that it is necessary to perform a bias irradiance variation at each voltage and subsequently conduct a mathematical correction of the differential to the absolute external quantum efficiency to obtain an accurate jV-characteristic. Furthermore, we show that measuring the external quantum efficiency as a function of voltage for a single bias irradiance of 0.36 AM1.5g equivalent sun provides a good approximation of the photocurrent density over voltage curve. The method is tested on a selection of efficient, common single-junctions. The obtained conclusions can easily be transferred to multi-junction devices with serially connected subcells.

Tuning of the microstructure, mechanical and tribological properties of a-C:H films by bias voltage of high frequency unipolar pulse

International Nuclear Information System (INIS)

Wang, Jia; Cao, Zhongyue; Pan, Fuping; Wang, Fuguo; Liang, Aimin; Zhang, Junyan

2015-01-01

Highlights: • a-C:H films deposited by high frequency unipolar pulse PECVD. • The film structures can be adjusted by bias voltage. • More graphitic structures form at high bias voltage. • The mechanical and tribological properties are improved by these structures. - Abstract: Amorphous hydrogenated carbon (a-C:H) films were prepared by high frequency unipolar pulse plasma-enhanced chemical vapor deposition in CH 4 , Ar, and H 2 atmosphere with the bias voltage in the range of −800 –−1600 V. The microstructures and mechanical properties of a-C:H films were investigated via high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and Nanoindenter. The results reveal that the curved and straight graphitic microstructures appear in amorphous carbon matrix, and their contents increase obviously with the bias voltage. At the same time, the corresponding hardness decreases and elastic recovery increases, however even in such a case films still possess excellent mechanical properties. According to the tribological property characterization, we believe that the bias voltage also influences their tribological performances significantly, the higher the bias voltage finally gets, the lower the friction coefficient and wear rate occur. These results indicate that the microstructures of a-C:H films can be tuned efficiently by bias voltage and the films with good mechanical and tribological properties can be obtained at a higher range.

Tuning of the microstructure, mechanical and tribological properties of a-C:H films by bias voltage of high frequency unipolar pulse

Energy Technology Data Exchange (ETDEWEB)

Wang, Jia; Cao, Zhongyue; Pan, Fuping [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Fuguo, E-mail: fgwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Liang, Aimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang, Junyan, E-mail: zhangjunyan@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2015-11-30

Highlights: • a-C:H films deposited by high frequency unipolar pulse PECVD. • The film structures can be adjusted by bias voltage. • More graphitic structures form at high bias voltage. • The mechanical and tribological properties are improved by these structures. - Abstract: Amorphous hydrogenated carbon (a-C:H) films were prepared by high frequency unipolar pulse plasma-enhanced chemical vapor deposition in CH{sub 4}, Ar, and H{sub 2} atmosphere with the bias voltage in the range of −800 –−1600 V. The microstructures and mechanical properties of a-C:H films were investigated via high resolution transmission electron microscope (HRTEM), Raman spectroscopy, and Nanoindenter. The results reveal that the curved and straight graphitic microstructures appear in amorphous carbon matrix, and their contents increase obviously with the bias voltage. At the same time, the corresponding hardness decreases and elastic recovery increases, however even in such a case films still possess excellent mechanical properties. According to the tribological property characterization, we believe that the bias voltage also influences their tribological performances significantly, the higher the bias voltage finally gets, the lower the friction coefficient and wear rate occur. These results indicate that the microstructures of a-C:H films can be tuned efficiently by bias voltage and the films with good mechanical and tribological properties can be obtained at a higher range.

Non-equilibrium scaling analysis of the Kondo model with voltage bias

International Nuclear Information System (INIS)

Fritsch, Peter; Kehrein, Stefan

2009-01-01

The quintessential description of Kondo physics in equilibrium is obtained within a scaling picture that shows the buildup of Kondo screening at low temperature. For the non-equilibrium Kondo model with a voltage bias, the key new feature are decoherence effects due to the current across the impurity. In the present paper, we show how one can develop a consistent framework for studying the non-equilibrium Kondo model within a scaling picture of infinitesimal unitary transformations (flow equations). Decoherence effects appear naturally in third order of the β-function and dominate the Hamiltonian flow for sufficiently large voltage bias. We work out the spin dynamics in non-equilibrium and compare it with finite temperature equilibrium results. In particular, we report on the behavior of the static spin susceptibility including leading logarithmic corrections and compare it with the celebrated equilibrium result as a function of temperature.

Effect of negative bias voltage on CrN films deposited by arc ion plating. I. Macroparticles filtration and film-growth characteristics

International Nuclear Information System (INIS)

Wang Qimin; Kim, Kwang Ho

2008-01-01

Chromium nitride (CrN) films were deposited on Si wafers by arc ion plating (AIP) at various negative bias voltages and several groups of N 2 /Ar gas flux ratios and chamber gas pressures. The authors systematically investigated the influence of negative bias voltage on the synthesis, composition, microstructure, and properties of the AIP CrN films. In this part (Part I), the investigations were mainly focused on the macroparticle distributions and film-growth characteristics. The results showed that macroparticle densities on the film surfaces decreased greatly by applying negative bias voltage, which can be affected by partial pressure of N 2 and Ar gases. From the statistical analysis of the experimental results, they proposed a new hybrid mechanism of ion bombardment and electrical repulsion. Also, the growth of the AIP CrN films was greatly altered by applying negative bias voltage. By increasing the bias voltage, the film surfaces became much smoother and the films evolved from apparent columnar microstructures to an equiaxed microstructure. The impinging high-energy Cr ions accelerated by negative bias voltages were deemed the inherent reason for the evolution of growth characteristics

Effects of detector–source distance and detector bias voltage variations on time resolution of general purpose plastic scintillation detectors

International Nuclear Information System (INIS)

Ermis, E.E.; Celiktas, C.

2012-01-01

Effects of source-detector distance and the detector bias voltage variations on time resolution of a general purpose plastic scintillation detector such as BC400 were investigated. 133 Ba and 207 Bi calibration sources with and without collimator were used in the present work. Optimum source-detector distance and bias voltage values were determined for the best time resolution by using leading edge timing method. Effect of the collimator usage on time resolution was also investigated. - Highlights: ► Effect of the source-detector distance on time spectra was investigated. ► Effect of the detector bias voltage variations on time spectra was examined. ► Optimum detector–source distance was determined for the best time resolution. ► Optimum detector bias voltage was determined for the best time resolution. ► 133 Ba and 207 Bi radioisotopes were used.

Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

Science.gov (United States)

Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

2011-03-22

A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2011-01-01

The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

Energy Technology Data Exchange (ETDEWEB)

Sogabe, Tomah, E-mail: Sogabe@mbe.rcast.u-tokyo.ac.jp; Ogura, Akio; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan)

2014-02-21

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

DEFF Research Database (Denmark)

Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

2003-01-01

Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...

Effect of Advanced Plasma Source bias voltage on properties of HfO2 films prepared by plasma ion assisted electron evaporation from metal hafnium

International Nuclear Information System (INIS)

Zhu, Meiping; Yi, Kui; Arhilger, Detlef; Qi, Hongji; Shao, Jianda

2013-01-01

HfO 2 films, using metal hafnium as starting material, are deposited by plasma-ion assisted electron evaporation with different Advanced Plasma Source (APS) bias voltages. The refractive index and extinction coefficient are calculated, the chemical state and composition, as well as the stress and aging behavior is investigated. Laser induced damage threshold (LIDT) and damage mechanism are also evaluated and discussed. Optical, structural, mechanical and laser induced damage properties of HfO 2 films are found to be sensitive to APS bias voltage. The film stress can be tuned by varying the APS bias voltage. Damage morphologies indicate the LIDT of the HfO 2 films at 1064 nm and 532 nm are dominated by the nodular-defect density in coatings, while the 355 nm LIDT is dominated by the film absorption. HfO 2 films with higher 1064 nm LIDT than samples evaporated from hafnia are achieved with bias voltage of 100 V. - Highlights: • HfO 2 films are evaporated with different Advanced Plasma Source (APS) bias voltages. • Properties of HfO 2 films are sensitive to APS bias voltage. • With a bias voltage of 100 V, HfO 2 coatings without any stress can be achieved. • Higher 1064 nm laser induced damage threshold is achieved at a bias voltage of 100 V

Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Jinlong Jiang

2014-01-01

Full Text Available The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3 carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2 ratio of the films.

Relationship between bias voltage and microstructure as well as properties of CrAlYN films

International Nuclear Information System (INIS)

Fu Ying-Ying; Li Hong-Xuan; Ji Li; Liu Xiao-Hong; Zhou Hui-Di; Chen Jian-Min; Liu Liu

2015-01-01

In this work, a series of CrAlYN films doped with 1 at.% yttrium were deposited by unbalanced reactive magnetron sputtering under different bias voltages. The effects of bias voltage on microstructure and properties of the CrAlYN films were subsequently investigated. It is found that all the as-deposited films have similar chemical composition and crystalline structure. However, the bias voltage has significant impact on the mechanical properties and oxidation resistance of the resulting films. Namely, the film deposited at 100 V has the highest hardness and best oxidation resistance, which are mainly attributed to its denser structure and higher Al content than others. In addition, the film obtained at 100 V exhibits superior oxidation resistance even at 1000 °C, and good friction and wear properties at 600 and 800 °C, and the latter two are mainly ascribed to the formation of compact transfer layer on the worn surfaces. However, this film experienced obvious wear loss at low testing temperatures (i.e., 200 and 400 °C) due to the serious abrasive wear. (paper)

Influence of bias voltage on the stability of CsI photocathodes exposed to air

CERN Document Server

Nitti, M A; Nappi, E; Singh, B K; Valentini, A

2002-01-01

We describe a possible correlation between the bias voltage applied to the substrate during the growth of CsI photocathodes and the variation of quantum efficiency (QE) after one day exposure to humid air. It was found that fresh samples are much less sensitive to humid air when a high negative bias voltage was applied during film growth. A model based on surface film interaction with water molecules is presented for the observed effect. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements have been performed to examine, respectively, the bulk structure and the surface of fresh and exposed CsI samples. Also reported are transmittance measurements for fresh and aged CsI samples in the wavelength range 190-850 nm.

Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

Science.gov (United States)

Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo

2014-12-01

We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.

A scanning tunneling microscope break junction method with continuous bias modulation.

Science.gov (United States)

Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

2015-09-28

Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule.

Investigating the effect of externalizing perspectives on cognitives biases

DEFF Research Database (Denmark)

Madsen, Fredrik Huitfeldt; Hicks, David L., David

2007-01-01

of intelligence analysis. We propose that complexity of maintaining multiple different perspectives the same data is one of the reasons for this. We further propose that a tool that facillitates the externalization multiple perspectives would reduce these biases and hence increase the overall quality...... the number of attacks that “get through”. There are many subproblems of this main problem, one of which is that relative quality of the intelligence analysis is too low [39, We observe that the analysts suffer from cognitive biases, and we assume that this is one of the reasons behind “low” quality...... of intelligence analyses....

The central tendency bias in color perception: effects of internal and external noise.

Science.gov (United States)

Olkkonen, Maria; McCarthy, Patrice F; Allred, Sarah R

2014-09-05

Perceptual estimates can be biased by previously seen stimuli in delayed estimation tasks. These biases are often toward the mean of the whole stimulus set. Recently, we demonstrated such a central tendency bias in delayed color estimation. In the Bayesian framework of perceptual inference, perceptual biases arise when noisy sensory measurements are combined with prior information about the world. Here, we investigate this idea in color perception by manipulating stimulus range and stimulus noise while characterizing delayed color estimates. First, we manipulated the experimental prior for stimulus color by embedding stimuli in collections with different hue ranges. Stimulus range affected hue bias: Hue estimates were always biased toward the mean of the current set. Next, we studied the effect of internal and external noise on the amount of hue bias. Internal noise was manipulated by increasing the delay between the reference and test from 0.4 to 4 s. External noise was manipulated by increasing the amount of chromatic noise in the reference stimulus, while keeping the delay between the reference and test constant at 2 s. Both noise manipulations had a reliable effect on the strength of the central tendency bias. Furthermore, there was a tendency for a positive relationship between variability of the estimates and bias in both noise conditions. In conclusion, observers are able to learn an experimental hue prior, and the weight on the prior can be manipulated by introducing noise in the estimation process. © 2014 ARVO.

Effects of doping and bias voltage on the screening in AAA-stacked trilayer graphene

Science.gov (United States)

Mohammadi, Yawar; Moradian, Rostam; Shirzadi Tabar, Farzad

2014-09-01

We calculate the static polarization of AAA-stacked trilayer graphene (TLG) and study its screening properties within the random phase approximation (RPA) in all undoped, doped and biased regimes. We find that the static polarization of undoped AAA-stacked TLG is a combination of the doped and undoped single-layer graphene static polarization. This leads to an enhancement of the dielectric background constant along a Thomas-Fermi screening with the Thomas-Fermi wave vector which is independent of carrier concentrations and a 1/r3 power law decay for the long-distance behavior of the screened Coulomb potential. We show that effects of a bias voltage can be taken into account by a renormalization of the interlayer hopping energy to a new bias-voltage-dependent value, indicating screening properties of AAA-stacked TLG can be tuned electrically. We also find that screening properties of doped AAA-stacked TLG, when μ exceeds √{2}γ, are similar to that of doped SLG only depending on doping. While for μ<√{2}γ, its screening properties are combination of SLG and AA-stacked bilayer graphene screening properties and they are determined by doping and the interlayer hopping energy.

Influence of bias voltage on properties of AlCrN coatings prepared by cathodic arc deposition

International Nuclear Information System (INIS)

Lomello, F.; Sanchette, F.; Schuster, F.; Tabarant, M.; Billard, A.

2013-01-01

AlCrN coatings were prepared by vacuum cathodic arc deposition. This low-temperature technique has been chosen due to its versatility, allowing the industrial up-scaling. In this study, the attention was focused on the correlation of the bias voltage with the resulting mechanical-tribological properties. For this purpose, the bias voltage was varied from 0 to -150 V. Indeed, the variation of grain sizes from 24 to 16 nm as well as the residual stresses from -0.68 to -8.94 GPa lead to obtain different mechanical-tribological properties. In this context, the sample deposited at -100 V exhibited an enhanced hardness (50 ± 2 GPa) and an acceptable wear resistance. (authors)

Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

International Nuclear Information System (INIS)

Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

2012-01-01

A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

International Nuclear Information System (INIS)

Calnan, Sonya; Upadhyaya, Hari M.; Dann, Sandra E.; Thwaites, Mike J.; Tiwari, Ayodhya N.

2007-01-01

Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V. All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivity was lowest at 500 V with values of 1.8 x 10 -4 Ω cm and 2.4 x 10 -4 Ω cm on glass and polyimide, respectively but was still less than 5 x 10 -4 Ω cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity

Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

2015-08-28

In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

Effects of detector-source distance and detector bias voltage variations on time resolution of general purpose plastic scintillation detectors.

Science.gov (United States)

Ermis, E E; Celiktas, C

2012-12-01

Effects of source-detector distance and the detector bias voltage variations on time resolution of a general purpose plastic scintillation detector such as BC400 were investigated. (133)Ba and (207)Bi calibration sources with and without collimator were used in the present work. Optimum source-detector distance and bias voltage values were determined for the best time resolution by using leading edge timing method. Effect of the collimator usage on time resolution was also investigated. Copyright © 2012 Elsevier Ltd. All rights reserved.

Increased particle confinement with the use of external dc bias field in the CTX spheromak

International Nuclear Information System (INIS)

Barnes, C.W.; Hoida, H.W.; Henins, I.; Fernandez, J.C.; Jarboe, T.R.; Marklin, G.J.

1985-01-01

Spheromaks are formed in a mesh flux conserver in the presence of an external dc bias field. The spheromaks remain stable to tilt instabilities with ratios of bias-to-spheromak flux of up to 47 +- 7%. Normally applied bias flux puts the spheromak separatrix inside the metal mesh and improves the particle confinement

The Effect of Bias Voltage and Gas Pressure on the Structure, Adhesion and Wear Behavior of Diamond Like Carbon (DLC Coatings With Si Interlayers

Directory of Open Access Journals (Sweden)

Liam Ward

2014-04-01

Full Text Available In this study diamond like carbon (DLC coatings with Si interlayers were deposited on 316L stainless steel with varying gas pressure and substrate bias voltage using plasma enhanced chemical vapor deposition (PECVD technology. Coating and interlayer thickness values were determined using X-ray photoelectron spectroscopy (XPS which also revealed the presence of a gradient layer at the coating substrate interface. Coatings were evaluated in terms of the hardness, elastic modulus, wear behavior and adhesion. Deposition rate generally increased with increasing bias voltage and increasing gas pressure. At low working gas pressures, hardness and modulus of elasticity increased with increasing bias voltage. Reduced hardness and modulus of elasticity were observed at higher gas pressures. Increased adhesion was generally observed at lower bias voltages and higher gas pressures. All DLC coatings significantly improved the overall wear resistance of the base material. Lower wear rates were observed for coatings deposited with lower bias voltages. For coatings that showed wear tracks considerably deeper than the coating thickness but without spallation, the wear behavior was largely attributed to deformation of both the coating and substrate with some cracks at the wear track edges. This suggests that coatings deposited under certain conditions can exhibit ultra high flexible properties.

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

International Nuclear Information System (INIS)

Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

2008-01-01

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

International Nuclear Information System (INIS)

Lee, Gyeo-Re; Hwang, Sung-Wook; Min, Jae-Ho; Moon, Sang Heup

2002-01-01

The dependence of the SiO 2 etch rate on the angle of ions incident on the substrate surface was studied over a bias voltage range from -20 to -600 V in a high-density CHF 3 plasma using a Faraday cage to control the ion incident angle. The effect of the bottom plane on the sidewall etching was also examined. Differences in the characteristics of the etch rate as a function of the ion angle were observed for different bias voltage regions. When the absolute value of the bias voltage was smaller than 200 V, the normalized etch rate (NER) defined as the etch rate normalized by the rate on the horizontal surface, changed following a cosine curve with respect to the ion incident angle, defined as the angle between the ion direction and the normal of the substrate surface. When the magnitude of the bias voltage was larger than 200 V, the NER was deviated to higher values from those given by a cosine curve at ion angles between 30 deg. and 70 deg. , and then drastically decreased at angles higher than 70 deg. until a net deposition was observed at angles near 90 deg. . The characteristic etch-rate patterns at ion angles below 70 deg. were determined by the ion energy transferred to the surface, which affected the SiO 2 etch rate and, simultaneously, the rate of removal of a fluorocarbon polymer film formed on the substrate surface. At high ion angles, particles emitted from the bottom plane contributed to polymer formation on and affected the etching characteristics of the substrate

Effect of Anode Floating Voltage and its Applications in Characterizing Silicon Drift Detectors

International Nuclear Information System (INIS)

Guang-Guo, Wu; Hong-Ri, Li; Kun, Liang; Ru, Yang; De-Jun, Han; Xue-Lei, Cao; Huan-Yu, Wang; Jun-Ming, An; Xiong-Wei, Hu

2009-01-01

Anode Boating voltage is predicted and investigated for silicon drift detectors (SDDs) with an active area of 5 mm 2 fabricated by a double-side parallel technology. It is demonstrated that the anode Boating voltage increases with the increasing inner ring voltage, and is almost unchanged with the external ring voltage. The anode Boating voltage will not be affected by the back electrode biased voltage until it reaches the full-depleted voltage (−50 V) of the SDD. Theoretical analysis and experimental results show that the anode Boating voltage is equal to the sum of the inner ring voltage and the built-in potential between the p + inner ring and the n + anode. A fast checking method before detector encapsulation is proposed by employing the anode Boating voltage along with checking the leakage current, potential distribution and drift properties

Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

Directory of Open Access Journals (Sweden)

Aleksei Obrosov

2017-02-01

Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

On-chip active gate bias circuit for MMIC amplifier applications with 100% threshold voltage variation compensation

NARCIS (Netherlands)

Hek, A.P. de; Busking, E.B.

2006-01-01

In this paper the design and performance of an on-chip active gate bias circuit for application in MMIC amplifiers, which gives 100% compensation for threshold variation and at the same time is insensitive to supply voltage variations, is discussed. Design equations have been given. In addition, the

Magnetoresistance and negative differential resistance in Ni/graphene/Ni vertical heterostructures driven by finite bias voltage: a first-principles study

DEFF Research Database (Denmark)

Saha, Kamal K.; Blom, Anders; Thygesen, Kristian S.

2012-01-01

Using the nonequilibrium Green's function formalism combined with density functional theory, we study finite bias quantum transport in Ni/Grn/Ni vertical heterostructures where n graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that the recently predicted “pess...... differential resistance as the bias voltage is increased from Vb=0 V to Vb≃0.5 V. We confirm that both of these nonequilibrium transport effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers....... “pessimistic” magnetoresistance of 100% for n≥5 junctions at zero bias voltage Vb→0 persists up to Vb≃0.4 V, which makes such devices promising for spin-torque-based device applications. In addition, for parallel orientations of the Ni magnetizations, the n=5 junction exhibits a pronounced negative...

Mathematical model of voltage-current characteristics of Bi(2223)/Ag magnets under an external magnetic field

CERN Document Server

Pitel, J; Lehtonen, J; Kovács, P

2002-01-01

We have developed a mathematical model, which enables us to predict the voltage-current V(I) characteristics of a solenoidal high-temperature superconductor (HTS) magnet subjected to an external magnetic field parallel to the magnet axis. The model takes into account the anisotropy in the critical current-magnetic field (I sub c (B)) characteristic and the n-value of Bi(2223)Ag multifilamentary tape at 20 K. From the power law between the electric field and the ratio of the operating and critical currents, the voltage on the magnet terminals is calculated by integrating the contributions of individual turns. The critical current of each turn, at given values of operating current and external magnetic field, is obtained by simple linear interpolation between the two suitable points of the I sub c (B) characteristic, which corresponds to the angle alpha between the vector of the resulting magnetic flux density and the broad tape face. In fact, the model is valid for any value and orientation of external magneti...

Low-bias flat band-stop filter based on velocity modulated gaussian graphene superlattice

Science.gov (United States)

Sattari-Esfahlan, S. M.; Shojaei, S.

2018-05-01

Transport properties of biased planar Gaussian graphene superlattice (PGGSL) with Fermi velocity barrier is investigated by transfer matrix method (TMM). It is observed that enlargement of bias voltage over miniband width breaks the miniband to WSLs leads to suppressing resonant tunneling. Transmission spectrum shows flat wide stop-band property controllable by external bias voltage with stop-band width of near 200 meV. The simulations demonstrate that strong velocity barriers prevent tunneling of Dirac electrons leading to controllable enhancement of stop-band width. By increasing ratio of Fermi velocity in barriers to wells υc stop-band width increase. As wide transmission stop-band width (BWT) of filter is tunable from 40 meV to 340 meV is obtained by enhancing ratio of υc from 0.2 to 1.5, respectively. Proposed structure suggests easy tunable wide band-stop electronic filter with a modulated flat stop-band characteristic by height of electrostatic barrier and structural parameters. Robust sensitivity of band width to velocity barrier intensity in certain bias voltages and flat band feature of proposed filter may be opens novel venue in GSL based flat band low noise filters and velocity modulation devices.

Adjustability of resonance frequency by external magnetic field and bias electric field of sandwich magnetoelectric PZT/NFO/PZT composites

Energy Technology Data Exchange (ETDEWEB)

Xu, Ling-Fang; Feng, Xing; Sun, Kang; Liang, Ze-Yu; Xu, Qian; Liang, Jia-Yu; Yang, Chang-Ping [Hubei University, Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices, Faculty of Physics and Electronic Science, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Wuhan (China)

2017-07-15

Sandwich magnetoelectric composites of PZT/NFO/PZT (PNP) have been prepared by laminating PZT5, NiFe{sub 2}O{sub 4}, and PZT5 ceramics in turn with polyvinyl alcohol (PVA) paste. A systematic study of structural, magnetic and ferroelectric properties is undertaken. Structural studies carried out by X-ray diffraction indicate formation of cubic perovskite phase of PZT5 ceramic and cubic spinel phase of NiFe{sub 2}O{sub 4} ceramic. As increasing the content of PZT5 phase, ferroelectric loops and magnetic loops of PNP composites showed increasing remnant electric polarizations and decreasing remnant magnetic moments separately. Both external magnetic fields and bias voltages could regulate the basal radial resonance frequency of the composites, which should be originated with the transformation and coupling of the stress between the piezoelectric phase and magnetostrictive phase. Such magnetoelectric composite provides great opportunities for electrostatically tunable devices. (orig.)

Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

Energy Technology Data Exchange (ETDEWEB)

Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

2014-04-24

Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

International Nuclear Information System (INIS)

Yu Jun-Ting; Chen Shu-Ming; Chen Jian-Jun; Huang Peng-Cheng; Song Rui-Qiang

2016-01-01

Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. (paper)

Quantum phase slips and voltage fluctuations in superconducting nanowires

Energy Technology Data Exchange (ETDEWEB)

Semenov, Andrew G. [I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physics Institute, Moscow (Russian Federation); National Research University Higher School of Economics, Moscow (Russian Federation); Zaikin, Andrei D. [I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physics Institute, Moscow (Russian Federation); Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)

2017-06-15

We argue that quantum phase slips (QPS) may generate non-equilibrium voltage fluctuations in superconducting nanowires. In the low frequency limit we evaluate all cumulants of the voltage operator which obey Poisson statistics and show a power law dependence on the external bias. We specifically address quantum shot noise which power spectrum S{sub Ω} may depend non-monotonously on temperature. In the long wire limit S{sub Ω} decreases with increasing frequency Ω and vanishes beyond a threshold value of Ω at T → 0. Our predictions can be directly tested in future experiments with superconducting nanowires. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Regression Analysis of the Effect of Bias Voltage on Nano- and Macrotribological Properties of Diamond-Like Carbon Films Deposited by a Filtered Cathodic Vacuum Arc Ion-Plating Method

Directory of Open Access Journals (Sweden)

Shojiro Miyake

2014-01-01

Full Text Available Diamond-like carbon (DLC films are deposited by bend filtered cathodic vacuum arc (FCVA technique with DC and pulsed bias voltage. The effects of varying bias voltage on nanoindentation and nanowear properties were evaluated by atomic force microscopy. DLC films deposited with DC bias voltage of −50 V exhibited the greatest hardness at approximately 50 GPa, a low modulus of dissipation, low elastic modulus to nanoindentation hardness ratio, and high nanowear resistance. Nanoindentation hardness was positively correlated with the Raman peak ratio Id/Ig, whereas wear depth was negatively correlated with this ratio. These nanotribological properties highly depend on the films’ nanostructures. The tribological properties of the FCVA-DLC films were also investigated using a ball-on-disk test. The average friction coefficient of DLC films deposited with DC bias voltage was lower than that of DLC films deposited with pulse bias voltage. The friction coefficient calculated from the ball-on-disk test was correlated with the nanoindentation hardness in dry conditions. However, under boundary lubrication conditions, the friction coefficient and specific wear rate had little correlation with nanoindentation hardness, and wear behavior seemed to be influenced by other factors such as adhesion strength between the film and substrate.

The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

Science.gov (United States)

Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

2009-01-01

CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

Effect of substrate bias voltage on tensile properties of single crystal silicon microstructure fully coated with plasma CVD diamond-like carbon film

Science.gov (United States)

Zhang, Wenlei; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

2018-06-01

Tensile strength and strength distribution in a microstructure of single crystal silicon (SCS) were improved significantly by coating the surface with a diamond-like carbon (DLC) film. To explore the influence of coating parameters and the mechanism of film fracture, SCS microstructure surfaces (120 × 4 × 5 μm3) were fully coated by plasma enhanced chemical vapor deposition (PECVD) of a DLC at five different bias voltages. After the depositions, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), thermal desorption spectrometry (TDS), surface profilometry, atomic force microscope (AFM) measurement, and nanoindentation methods were used to study the chemical and mechanical properties of the deposited DLC films. Tensile test indicated that the average strength of coated samples was 13.2-29.6% higher than that of the SCS sample, and samples fabricated with a -400 V bias voltage were strongest. The fracture toughness of the DLC film was the dominant factor in the observed tensile strength. Deviations in strength were reduced with increasingly negative bias voltage. The effect of residual stress on the tensile properties is discussed in detail.

Multipacting in a coaxial coupler with bias voltage for SRF operation with a large beam current

Science.gov (United States)

Liu, Z.-K.; Wang, Ch.; Chang, F.-Y.; Chang, L.-H.; Chang, M.-H.; Chen, L.-J.; Chung, F.-T.; Lin, M.-C.; Lo, C.-H.; Tsai, C.-L.; Tsai, M.-H.; Yeh, M.-S.; Yu, T.-C.

2016-09-01

A superconducting radio-frequency (SRF) module is commonly used for a high-energy accelerator; its purpose is to provide energy to the particle beam. Because of the low power dissipation and smaller impedance of a higher-order mode for this module, it can provide more power to the particle beam with better stability through decreasing the couple bunch instability. A RF coupler is necessary to transfer the high power from a RF generator to the cavity. A coupler of coaxial type is a common choice. With high-power operation, it might suffer from multipacting, which is a resonance phenomenon due to re-emission of secondary electrons. Applying a bias voltage between inner and outer conductors of the coaxial coupler might increase or decrease the strength of the multipacting effect. We studied the effect of a bias voltage on multipacting using numerical simulation to track the motion of the electrons. The simulation results and an application for SRF operation with a large beam current are presented in this paper.

Modular high-voltage bias generator powered by dual-looped self-adaptive wireless power transmission.

Science.gov (United States)

Xie, Kai; Huang, An-Feng; Li, Xiao-Ping; Guo, Shi-Zhong; Zhang, Han-Lu

2015-04-01

We proposed a modular high-voltage (HV) bias generator powered by a novel transmitter-sharing inductive coupled wireless power transmission technology, aimed to extend the generator's flexibility and configurability. To solve the problems caused through an uncertain number of modules, a dual-looped self-adaptive control method is proposed that is capable of tracking resonance frequency while maintaining a relatively stable induction voltage for each HV module. The method combines a phase-locked loop and a current feedback loop, which ensures an accurate resonance state and a relatively constant boost ratio for each module, simplifying the architecture of the boost stage and improving the total efficiency. The prototype was built and tested. The input voltage drop of each module is less than 14% if the module number varies from 3 to 10; resonance tracking is completed within 60 ms. The efficiency of the coupling structure reaches up to 95%, whereas the total efficiency approaches 73% for a rated output. Furthermore, this technology can be used in various multi-load wireless power supply applications.

External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor

Science.gov (United States)

Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K.; Shi, Yingtang; Wagner, Paul G.; Pivaroff-Ward, Kendra; Sassic, Jessica K.; Bayliss, Douglas A.

2013-01-01

The Ether-a-go-go (EAG) superfamily of voltage-gated K+ channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K+ currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K+ channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance–voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn2+. Low pH similarly reduces Mg2+ sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca2+. Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K+ currents observed in vivo. PMID:23712551

External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor.

Science.gov (United States)

Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K; Shi, Yingtang; Wagner, Paul G; Pivaroff-Ward, Kendra; Sassic, Jessica K; Bayliss, Douglas A; Jegla, Timothy

2013-06-01

The Ether-a-go-go (EAG) superfamily of voltage-gated K(+) channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K(+) currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K(+) channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance-voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn(2+). Low pH similarly reduces Mg(2+) sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca(2+). Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K(+) currents observed in vivo.

The effect of external visible light on the breakdown voltage of a long discharge tube

Science.gov (United States)

Shishpanov, A. I.; Ionikh, Yu. Z.; Meshchanov, A. V.

2016-06-01

The breakdown characteristics of a discharge tube with a configuration typical of gas-discharge light sources and electric-discharge lasers (a so-called "long discharge tube") filled with argon or helium at a pressure of 1 Torr have been investigated. A breakdown has been implemented using positive and negative voltage pulses with a linear leading edge having a slope dU/ dt ~ 10-107 V/s. Visible light from an external source (halogen incandescent lamp) is found to affect the breakdown characteristics. The dependences of the dynamic breakdown voltage of the tube on dU/ dt and on the incident light intensity are measured. The breakdown voltage is found to decrease under irradiation of the high-voltage anode of the tube in a wide range of dU/ dt. A dependence of the effect magnitude on the light intensity and spectrum is obtained. Possible physical mechanisms of this phenomenon are discussed.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

Science.gov (United States)

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

Development of a broadband reflective T-filter for voltage biasing high-Q superconducting microwave cavities

International Nuclear Information System (INIS)

Hao, Yu; Rouxinol, Francisco; LaHaye, M. D.

2014-01-01

We present the design of a reflective stop-band filter based on quasi-lumped elements that can be utilized to introduce large dc and low-frequency voltage biases into a low-loss superconducting coplanar waveguide (CPW) cavity. Transmission measurements of the filter are seen to be in good agreement with simulations and demonstrate insertion losses greater than 20 dB in the range of 3–10 GHz. Moreover, transmission measurements of the CPW's fundamental mode demonstrate that loaded quality factors exceeding 10 5 can be achieved with this design for dc voltages as large as 20 V and for the cavity operated in the single-photon regime. This makes the design suitable for use in a number of applications including qubit-coupled mechanical systems and circuit QED

Light emitting diode driver with differential voltage supply

NARCIS (Netherlands)

2015-01-01

The current invention relates to a driver for driving one or a plurality of LEDs (D1, D2), comprising at least one driving unit (201, 202) adapted to be supplied with a differential voltage, between one first bias voltage (VB1) and one second bias voltage (VB2), the differential voltage being

Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

2010-04-15

The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

International Nuclear Information System (INIS)

Zhang Yong; Yang Jianhong; Cai Xueyuan; Wang Zaixing

2010-01-01

The exponential dependence of the potential barrier height φ c on the biased voltages of the inorganic/organic static induction transistor (SIT/OSIT) through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of φ c on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description of φ c can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics. (semiconductor devices)

Dynamic range of low-voltage cascode current mirrors

DEFF Research Database (Denmark)

Bruun, Erik; Shah, Peter Jivan

1995-01-01

Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use....... The proposed configuration has the advantage of simplicity combined with a complete elimination of the need for fixed bias voltages or bias currents in the current mirror. A disadvantage is that it requires a higher input voltage to the current mirror...

Influence of substrate bias voltage on the properties of TiO2 deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

Science.gov (United States)

Bait, L.; Azzouz, L.; Madaoui, N.; Saoula, N.

2017-02-01

The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to -100 V, on the structure and properties of the TiO2 thin films for biomaterials applications. The TiO2 films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O2 gas mixture. The variation of substrate bias voltage from 0 to -100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO2 films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = -100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0-50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO2 films deposited at -100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the study of the electrochemical properties. Comparison between the corrosion resistance of the uncoated and coated samples showed a reduction in corrosion current density for coated samples compared to the uncoated one. The best corrosion current density of the film deposited at -75 V was 5.9 nA/cm2, which is about 11 times less than that of the uncoated steel 68.3 nA/cm2). The

Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

Energy Technology Data Exchange (ETDEWEB)

Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M., E-mail: m.gregg@qub.ac.uk [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Ashcroft, C. M. [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Canalias, C. [Department of Applied Physics, Royal Institute of Technology, Roslagstullsbacken 21, 10691 Stockholm (Sweden); Gruverman, A. [Department of Physics and Astronomy, University of Nebraska Lincoln, Nebraska 68588–0299 (United States)

2014-08-14

Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

International Nuclear Information System (INIS)

Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

2012-01-01

Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

Wideband Electrostatic Vibration Energy Harvester (e-VEH) Having a Low Start-Up Voltage Employing a High-Voltage Integrated Interface

International Nuclear Information System (INIS)

Dudka, A; Galayko, D; Basset, P; Cottone, F; Blokhina, E

2013-01-01

This paper reports on an electrostatic Vibration Energy Harvester (e-VEH) system, for which the energy conversion process is initiated with a low bias voltage and is compatible with wideband stochastic external vibrations. The system employs the auto-synchronous conditioning circuit topology with the use of a novel dedicated integrated low-power high-voltage switch that is needed to connect the charge pump and flyback – two main parts of the used conditioning circuit. The proposed switch is designed and implemented in AMS035HV CMOS technology. Thanks to the proposed switch device, which is driven with a low-voltage ground-referenced logic, the e-VEH system may operate within a large voltage range, from a pre-charge low voltage up to several tens volts. With such a high-voltage e-VEH operation, it is possible to obtain a strong mechanical coupling and a high rate of vibration energy conversion. The used transducer/resonator device is fabricated with a batch-processed MEMS technology. When excited with stochastic vibrations having an acceleration level of 0.8 g rms distributed in the band 110–170 Hz, up to 0.75 μW of net electrical power has been harvested with our system. This work presents an important milestone in the challenge of designing a fully integrated smart conditioning interface for the capacitive e-VEHs

Effect of combined external uniaxial stress and dc bias on the dielectric property of BaTiO3-based dielectrics in multilayer ceramic capacitor: thermodynamics and experiments

International Nuclear Information System (INIS)

Yang Gang; Yue Zhenxing; Sun Tieyu; Gou Huanlin; Li Longtu

2008-01-01

The dielectric properties of (Nb, Y)-doped BaTiO 3 in a multilayer ceramic capacitor (MLCC) under combined external uniaxial compressive stress and dc bias field were investigated at room temperature by using a modified Ginsburg-Landau-Devonshire thermodynamic theory and the dielectric measurement. It is found that although dc bias decreases the dielectric properties dominantly, the influence of the external uniaixial compressive stress should not be neglected. When applied along a direction perpendicular to the internal electrode layer in the MLCC, the external uniaixal compressive stress will strengthen the negative effect of dc bias. In contrast, the external uniaxial compressive stress along a direction parallel to the internal electrode layer in the MLCC will increase the dielectric permittivity under dc bias field, i.e. improve the ε-V response of the MLCC. Furthermore, although there is a difference between the calculated permittivity and the measured permittivity, the effects of the combined external uniaxial compressive stress and dc bias field on the dielectric permittivity described through two approaches are in good agreement

Design of a Novel Voltage Controller for Conversion of Carbon Dioxide into Clean Fuels Using the Integration of a Vanadium Redox Battery with Solar Energy

Directory of Open Access Journals (Sweden)

Ting-Chia Ou

2018-02-01

Full Text Available This letter presents a design for a novel voltage controller (NVC which can exhibit three different reactions using the integration of a vanadium redox battery (VRB with solar energy, and uses only electrochemical potentials with optimal external bias voltage control to carry out hydrogen production and the conversion of carbon dioxide (CO2 into methane and methanol. This NVC is simply constructed by using dynamic switch and control strategies with a time-variant control system. In this design, the interval voltage bias solutions obtained by the proposed NVC exhibit better voltage ranges and good agreement with the practical scenarios, which will bring significant benefits to operation for continuous reduction of CO2 into value-added clean fuels using the integration of a VRB with solar energy or any other renewable energy resource for future applications.

Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

Energy Technology Data Exchange (ETDEWEB)

Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

2016-07-25

In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

Influence of substrate bias voltage on the properties of TiO2 deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

International Nuclear Information System (INIS)

Bait, L.; Azzouz, L.; Madaoui, N.; Saoula, N.

2017-01-01

Highlights: • TiO 2 films were deposited on stainless steel 304L RF magnetron sputtering at different substrate bias. • The hardness of TiO 2 coated 304L are higher than those obtained for uncoated substrate. • TiO 2 films provide good protection for stainless steel against corrosion in Ringer solution. - Abstract: The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to −100 V, on the structure and properties of the TiO 2 thin films for biomaterials applications. The TiO 2 films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O 2 gas mixture. The variation of substrate bias voltage from 0 to −100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO 2 films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = −100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0–50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO 2 films deposited at −100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the study of the electrochemical properties

Efficient 2,4-dichloronitrobenzene removal in the coupled BES-UASB reactor: Effect of external voltage mode.

Science.gov (United States)

Chen, Hui; Gao, Xinyi; Wang, Caiqin; Shao, Junjie; Xu, Xiangyang; Zhu, Liang

2017-10-01

In this study, bioelectrochemical-upflow anaerobic sludge blanket (BES-UASB) system was developed for treatment of 2,4-dichloronitrobenzen (DClNB) containing wastewater to investigate the effect of external voltage with different supplying modes. Results showed that 2,4-dichloroaniline (DClAN) was under detection limit in R1 (applied with intermittent voltage) and R2 (applied with continuous voltage) when the DClNB loading increased from 25 to 100gm 3 d -1 (hydraulic retention time (HRT) was decreased from 24 to 6h) while sudden accumulation of DClAN (1.7mgL -1 ) was observed in R0 (control). Dechlorination efficiency (DE) decreased to 32.7%, 45.0% and 45.3% in R0, R1 and R2 when HRT was further shortened to 4h. Microbial community analysis indicated the significant enrichment of dechlorination-related species in R1 and R2 compared with R0, e.g., Dehalobacter and Dehalococcoides. In summary, the BES-UASB system with intermittent voltage is an alternative process for efficient treatment of DClNB containing wastewater, and the energy input was reduced markedly. Copyright © 2017 Elsevier Ltd. All rights reserved.

Effect of self-bias voltage on the wettability, chemical functionality and nanomechanical properties of hexamethyldisiloxane films

Energy Technology Data Exchange (ETDEWEB)

Albuquerque, M.D.F. [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil); Santos, E. [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil); Faculty of Civil Engineering, University Center of Volta Redonda (UniFOA), Volta Redonda, RJ (Brazil); Perdone, R.R.T. [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil); Simao, R.A., E-mail: renata@metalmat.ufrj.br [Program of Metallurgical and Materials Engineering, COPPE, Federal University of Rio de Janeiro (UFRJ), P.O. Box 68505, 21941-972 Rio de Janeiro, RJ (Brazil)

2014-08-01

Copper and silicon substrates were coated by chemical vapor deposition using hexamethyldisiloxane (HMDSO) as the precursor gas. Substrates were placed both at the anode and cathode of a glow discharge reactor, and films were deposited using different self-bias voltages. This study focuses on comparing the differences between the hydrophilicity, polymeric character, chemical structure and nanomechanical properties of HMDSO films produced at the cathode and anode of the reactor at different self-bias voltages. Fourier transform infrared spectroscopy and Raman confocal spectroscopy indicated a significant increase in the content of organic groups when films were deposited at the anode. Analyzing the nanomechanical properties of the cathode and anode films indicated that the penetration depth was higher for samples prepared at the cathode (lower hardness) compared with the samples produced at the anode. The measured contact angles indicated that all samples became hydrophobic with water contact angles close to 100°; however, a different lyophobic character was observed when diiodomethane was used. Films produced at the anode with diiodomethane exhibited higher contact angles than did films produced at the cathode. - Highlights: • Hexamethyldisiloxane (HMDSO) films deposited by CVD on Si and Cu substrates • HMDSO films produced at the anode have greater content of organic SiO{sub 4} groups. • Films produced at the anode are harder than those deposited at the cathode. • HMDSO films produced at the cathode exhibited higher elastic recovery. • All films are hydrophobic (θ close to 100°)

Effect of self-bias voltage on the wettability, chemical functionality and nanomechanical properties of hexamethyldisiloxane films

International Nuclear Information System (INIS)

Albuquerque, M.D.F.; Santos, E.; Perdone, R.R.T.; Simao, R.A.

2014-01-01

Copper and silicon substrates were coated by chemical vapor deposition using hexamethyldisiloxane (HMDSO) as the precursor gas. Substrates were placed both at the anode and cathode of a glow discharge reactor, and films were deposited using different self-bias voltages. This study focuses on comparing the differences between the hydrophilicity, polymeric character, chemical structure and nanomechanical properties of HMDSO films produced at the cathode and anode of the reactor at different self-bias voltages. Fourier transform infrared spectroscopy and Raman confocal spectroscopy indicated a significant increase in the content of organic groups when films were deposited at the anode. Analyzing the nanomechanical properties of the cathode and anode films indicated that the penetration depth was higher for samples prepared at the cathode (lower hardness) compared with the samples produced at the anode. The measured contact angles indicated that all samples became hydrophobic with water contact angles close to 100°; however, a different lyophobic character was observed when diiodomethane was used. Films produced at the anode with diiodomethane exhibited higher contact angles than did films produced at the cathode. - Highlights: • Hexamethyldisiloxane (HMDSO) films deposited by CVD on Si and Cu substrates • HMDSO films produced at the anode have greater content of organic SiO 4 groups. • Films produced at the anode are harder than those deposited at the cathode. • HMDSO films produced at the cathode exhibited higher elastic recovery. • All films are hydrophobic (θ close to 100°)

High-output microwave detector using voltage-induced ferromagnetic resonance

International Nuclear Information System (INIS)

Shiota, Yoichi; Suzuki, Yoshishige; Miwa, Shinji; Tamaru, Shingo; Nozaki, Takayuki; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji

2014-01-01

We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque

High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

Science.gov (United States)

Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

2010-10-01

White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

Voltage Dependence of Supercapacitor Capacitance

Directory of Open Access Journals (Sweden)

Szewczyk Arkadiusz

2016-09-01

Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

Science.gov (United States)

Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

2011-11-30

We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

Energy Technology Data Exchange (ETDEWEB)

Niang, K. M.; Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Barquinha, P. M. C.; Martins, R. F. P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Cobb, B. [Holst Centre/TNO, High Tech Campus 31, 5656AE Eindhoven (Netherlands); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

2016-02-29

Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

Model of 1/f noise in ion implanted resistors as a function of the resistance, determined by a reverse bias voltage

International Nuclear Information System (INIS)

Beck, H.G.E.

1979-01-01

A model is presented for the 1/f noise in ion-implanted resistors. The resistance was changed by a reverse bias voltage. The model explains the experimentally found square dependence between the relative 1/f noise intensity C/C 0 and the relative change in resistance R/R 0 . (author)

Simulation of HPIB propagation in biased charge collector

International Nuclear Information System (INIS)

Li Hongyu; Qiu Aici

2004-01-01

A 2.5D PIC simulation using KARAT code for inner charge propagation within biased charge collector for measuring HPIB is presented. The simulation results indicate that the charges were neutralized but the current non-neutralized in the biased charge collector. The influence of ions collected vs biased voltage of the collector was also simulated. -800 V biased voltage can meet the measurement of 500 keV HPIB, and this is consistent with the experimental results

Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

Science.gov (United States)

Ho, Teck Seng; Charles, Christine; Boswell, Rod

2018-05-01

In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

Hydrogen Permeation, and Mechanical and Tribological Behavior, of CrNx Coatings Deposited at Various Bias Voltages on IN718 by Direct Current Reactive Sputtering

Directory of Open Access Journals (Sweden)

Egor B. Kashkarov

2018-02-01

Full Text Available In the current work, the microstructure, hydrogen permeability, and properties of chromium nitride (CrNx thin films deposited on the Inconel 718 superalloy using direct current reactive sputtering are investigated. The influence of the substrate bias voltage on the crystal structure, mechanical, and tribological properties before and after hydrogen exposure was studied. It was found that increasing the substrate bias voltage leads to densification of the coating. X-ray diffraction (XRD results reveal a change from mixed fcc-CrN + hcp-Cr2N to the approximately stoichiometric hcp-Cr2N phase with increasing substrate bias confirmed by wavelength-dispersive X-ray spectroscopy (WDS. The texture coefficients of (113, (110, and (111 planes vary significantly with increasing substrate bias voltage. The hydrogen permeability was measured by gas-phase hydrogenation. The CrN coating deposited at 60 V with mixed c-CrN and (113 textured hcp-Cr2N phases exhibits the lowest hydrogen absorption at 873 K. It is suggested that the crystal orientation is only one parameter influencing the permeation resistance of the CrNx coating together with the film structure, the presence of mixing phases, and the packing density of the structure. After hydrogenation, the hardness increased for all coatings, which could be related to the formation of a Cr2O3 oxide film on the surface, as well as the defect formation after hydrogen loading. Tribological tests reveal that hydrogenation leads to a decrease of the friction coefficient by up to 40%. The lowest value of 0.25 ± 0.02 was reached for the CrNx coating deposited at 60 V after hydrogenation.

Bias-dependent high saturation solar LBIC scanning of solar cells

Energy Technology Data Exchange (ETDEWEB)

Vorster, F.J.; van Dyk, E.E. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

2007-06-15

A light beam-induced current measurement system that uses concentrated solar radiation as a beam probe to map spatially distributed defects on a solar cell has been developed and tested [F.J. Vorster, E.E. van Dyk, Rev. Sci. Instrum., submitted for review]. The induced current response from a flat plate EFG Si solar cell was mapped as a function of surface position and cell bias by using a solar light beam induced current (S-LBIC) mapping system while at the same time dynamically biasing the whole cell with an external voltage. This paper examines the issues relating to transient capacitive effects as well as the electrical behaviour of typical solar cell defect mechanisms under spot illumination. By examining the bias dependence of the S-LBIC maps, various defect mechanisms of photovoltaic (PV) cells under concentrated solar irradiance may be identified. The techniques employed to interpret the spatially distributed IV curves as well as initial results are discussed. (author)

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

Energy Technology Data Exchange (ETDEWEB)

Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

2014-04-07

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

Enhanced Corrosion Resistance and Interfacial Conductivity of TiC x/a-C Nanolayered Coatings via Synergy of Substrate Bias Voltage for Bipolar Plates Applications in PEMFCs.

Science.gov (United States)

Yi, Peiyun; Zhang, Weixin; Bi, Feifei; Peng, Linfa; Lai, Xinmin

2018-06-06

Proton-exchange membrane fuel cells are one kind of renewable and clean energy conversion device, whose metallic bipolar plates are one of the key components. However, high interfacial contact resistance and poor corrosion resistance are still great challenges for the commercialization of metallic bipolar plates. In this study, we demonstrated a novel strategy for depositing TiC x /amorphous carbon (a-C) nanolayered coatings by synergy of 60 and 300 V bias voltage to enhance corrosion resistance and interfacial conductivity. The synergistic effects of bias voltage on the composition, microstructure, surface roughness, electrochemical corrosion behaviors, and interfacial conductivity of TiC x /a-C coatings were explored. The results revealed that the columnar structures in the inner layer were suppressed and the surface became rougher with the 300 V a-C layer outside. The composition analysis indicated that the sp 2 content increased with an increase of 300 V sputtering time. Due to the synergy strategy of bias voltage, lower corrosion current densities were achieved both in potentiostatic polarization (1.6 V vs standard hydrogen electrode) and potentiodynamic polarization. With the increase of 300 V sputtering time, the interfacial conductivity was improved. The enhanced corrosion resistance and interfacial conductivity of the TiC x /a-C coatings would provide new opportunities for commercial bipolar plates.

Influence of substrate bias voltage on the properties of TiO{sub 2} deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications

Energy Technology Data Exchange (ETDEWEB)

Bait, L. [Division Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, CDTA,Cité du 20 aout 1956, Baba Hassen, BP n°. 17, Alger (Algeria); Azzouz, L. [Université de Amar Telidji, Laghouat (Algeria); Madaoui, N. [Division Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, CDTA,Cité du 20 aout 1956, Baba Hassen, BP n°. 17, Alger (Algeria); Saoula, N., E-mail: nsaoula@cdta.dz [Division Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, CDTA,Cité du 20 aout 1956, Baba Hassen, BP n°. 17, Alger (Algeria)

2017-02-15

Highlights: • TiO{sub 2} films were deposited on stainless steel 304L RF magnetron sputtering at different substrate bias. • The hardness of TiO{sub 2} coated 304L are higher than those obtained for uncoated substrate. • TiO{sub 2} films provide good protection for stainless steel against corrosion in Ringer solution. - Abstract: The aim of this paper is to investigate the effect of the substrate bias, varied from 0 to −100 V, on the structure and properties of the TiO{sub 2} thin films for biomaterials applications. The TiO{sub 2} films were grown onto 304L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure titanium target in Ar-O{sub 2} gas mixture. The variation of substrate bias voltage from 0 to −100 V produces variations of structure and mechanical properties of the films. The deposited films were characterized by X-rays diffraction, nanoindentation and potentiodynamic polarization. Also, the friction and wear properties of TiO{sub 2} films sliding against alumina ball in air were investigated. Experimental results showed that the thickness increases for non-biased substrate voltage to Vs = −100 V from 820 nm to 1936 nm respectively. The roughness is in the range of 50 nm and 14 nm. XRD results show that all structures of the films are crystalline and changed with varying the bias voltage. The anatase phase is predominant in the low negative bias range (0–50 V). The hardness significantly increased from 2.2 to 6.4 GPa when the bias voltage was increased from 0 to 75 V and then slightly decrease to 5.1 GPa as further increased to 100 V. At the same time, the results indicate that TiO{sub 2} films deposited at −100 V exhibited better wear resistance compared to the other samples, i.e. the minimum wear rates and the lower coefficient of friction of 0.16. In order to simulate natural biological conditions, physiological serum (pH = 6.3), thermostatically controlled at 37 °C, was used as the electrolyte for the

Voltage-Controlled Reconfigurable Spin-Wave Nanochannels and Logic Devices

Science.gov (United States)

Rana, Bivas; Otani, YoshiChika

2018-01-01

Propagating spin waves (SWs) promise to be a potential information carrier in future spintronics devices with lower power consumption. Here, we propose reconfigurable nanochannels (NCs) generated by voltage-controlled magnetic anisotropy (VCMA) in an ultrathin ferromagnetic waveguide for SW propagation. Numerical micromagnetic simulations are performed to demonstrate the confinement of magnetostatic forward volumelike spin waves in NCs by VCMA. We demonstrate that the NCs, with a width down to a few tens of a nanometer, can be configured either into a straight or curved structure on an extended SW waveguide. The key advantage is that either a single NC or any combination of a number of NCs can be easily configured by VCMA for simultaneous propagation of SWs either with the same or different wave vectors according to our needs. Furthermore, we demonstrate the logic operation of a voltage-controlled magnonic xnor and universal nand gate and propose a voltage-controlled reconfigurable SW switch for the development of a multiplexer and demultiplexer. We find that the NCs and logic devices can even be functioning in the absence of the external-bias magnetic field. These results are a step towards the development of all-voltage-controlled magnonic devices with an ultralow power consumption.

Forward-biased nanophotonic detector for ultralow-energy dissipation receiver

Science.gov (United States)

Nozaki, Kengo; Matsuo, Shinji; Fujii, Takuro; Takeda, Koji; Shinya, Akihiko; Kuramochi, Eiichi; Notomi, Masaya

2018-04-01

Generally, reverse-biased photodetectors (PDs) are used for high-speed optical receivers. The forward voltage region is only utilized in solar-cells, and this photovoltaic operation would not be concurrently obtained with high efficiency and high speed operation. Here we report that photonic-crystal waveguide PDs enable forward-biased high-speed operation at 40 Gbit/s with keeping high responsivity (0.88 A/W). Within our knowledge, this is the first demonstration of the forward-biased PDs with high responsivity. This achievement is attributed to the ultracompactness of our PD and the strong light confinement within the absorber and depleted regions, thereby enabling efficient photo-carrier generation and fast extraction. This result indicates that it is possible to construct a high-speed and ultracompact photo-receiver without an electrical amplifier nor an external bias circuit. Since there is no electrical energy required, our estimation shows that the consumption energy is just the optical energy of the injected signal pulse which is about 1 fJ/bit. Hence, it will lead to an ultimately efficient and highly integrable optical-to-electrical converter in a chip, which will be a key ingredient for dense nanophotonic communication and processors.

Forward-biased nanophotonic detector for ultralow-energy dissipation receiver

Directory of Open Access Journals (Sweden)

Kengo Nozaki

2018-04-01

Full Text Available Generally, reverse-biased photodetectors (PDs are used for high-speed optical receivers. The forward voltage region is only utilized in solar-cells, and this photovoltaic operation would not be concurrently obtained with high efficiency and high speed operation. Here we report that photonic-crystal waveguide PDs enable forward-biased high-speed operation at 40 Gbit/s with keeping high responsivity (0.88 A/W. Within our knowledge, this is the first demonstration of the forward-biased PDs with high responsivity. This achievement is attributed to the ultracompactness of our PD and the strong light confinement within the absorber and depleted regions, thereby enabling efficient photo-carrier generation and fast extraction. This result indicates that it is possible to construct a high-speed and ultracompact photo-receiver without an electrical amplifier nor an external bias circuit. Since there is no electrical energy required, our estimation shows that the consumption energy is just the optical energy of the injected signal pulse which is about 1 fJ/bit. Hence, it will lead to an ultimately efficient and highly integrable optical-to-electrical converter in a chip, which will be a key ingredient for dense nanophotonic communication and processors.

Electrical properties of fluorine-doped ZnO nanowires formed by biased plasma treatment

Science.gov (United States)

Wang, Ying; Chen, Yicong; Song, Xiaomeng; Zhang, Zhipeng; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-05-01

Doping is an effective method for tuning electrical properties of zinc oxide nanowires, which are used in nanoelectronic devices. Here, ZnO nanowires were prepared by a thermal oxidation method. Fluorine doping was achieved by a biased plasma treatment, with bias voltages of 100, 200, and 300 V. Transmission electron microscopy indicated that the nanowires treated at bias voltages of 100 and 200 V featured low crystallinity. When the bias voltage was 300 V, the nanowires showed single crystalline structures. Photoluminescence measurements revealed that concentrations of oxygen and surface defects decreased at high bias voltage. X-ray photoelectron spectroscopy suggested that the F content increased as the bias voltage was increased. The conductivity of the as-grown nanowires was less than 103 S/m; the conductivity of the treated nanowires ranged from 1 × 104-5 × 104, 1 × 104-1 × 105, and 1 × 103-2 × 104 S/m for bias voltage treatments at 100, 200, and 300 V, respectively. The conductivity improvements of nanowires formed at bias voltages of 100 and 200 V, were attributed to F-doping, defects and surface states. The conductivity of nanowires treated at 300 V was attributed to the presence of F ions. Thus, we provide a method of improving electrical properties of ZnO nanowires without altering their crystal structure.

Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

Directory of Open Access Journals (Sweden)

Chaichana Amornchai

2017-01-01

Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma

International Nuclear Information System (INIS)

Lee, Jin-Kwan; Lee, Gyeo-Re; Min, Jae-Ho; Moon, Sang Heup

2007-01-01

The dependence of Si 3 N 4 etch rates and the etch selectivity of SiO 2 to Si 3 N 4 on ion-incident angles was studied for different bias voltages in a high-density C 4 F 8 plasma. A Faraday cage and specially designed substrate holders were used to accurately control the angles of incident ions on the substrate surface. The normalized etch yield (NEY), defined as the etch yield obtained at a given ion-incident angle normalized to that obtained on a horizontal surface, was unaffected by the bias voltage in Si 3 N 4 etching, but it increased with the bias voltage in SiO 2 etching in the range of -100 to -300 V. The NEY changed showing a maximum with an increase in the ion-incident angle in the etching of both substrates. In the Si 3 N 4 etching, a maximum NEY of 1.7 was obtained at 70 deg. in the above bias voltage range. However, an increase in the NEY at high ion-incident angles was smaller for SiO 2 than for Si 3 N 4 and, consequently, the etch selectivity of SiO 2 to Si 3 N 4 decreased with an increase in the ion-incident angle. The etch selectivity decreased to a smaller extent at high bias voltage because the NEY of SiO 2 had increased. The characteristic changes in the NEY for different substrates could be correlated with the thickness of a steady-state fluorocarbon (CF x ) film formed on the substrates

Bias stress effect and recovery in organic field effect transistors : proton migration mechanism

NARCIS (Netherlands)

Sharma, A.; Mathijssen, S.G.J.; Kemerink, M.; Leeuw, de D.M.; Bobbert, P.A.; Bao, Z.; McCulloch, I.

2010-01-01

Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of

A novel high voltage start up circuit for an integrated switched mode power supply

Energy Technology Data Exchange (ETDEWEB)

Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2010-09-15

A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

Effects of bias voltage and annealing on the structure and mechanical properties of WC0.75N0.25 thin films

International Nuclear Information System (INIS)

Su, Y.D.; Hu, C.Q.; Wen, M.; Wang, C.; Liu, D.S.; Zheng, W.T.

2009-01-01

We investigated the effects of both bias voltage and annealing on the structure and mechanical properties of WC 0.75 N 0.25 thin films, deposited on Si (1 0 0) substrates by a direct current reactive magnetron sputtering system, in which the negative substrate bias voltage (V b ) was varied from floating (-1.6 V) to -200 V, and the deposited films were annealed at 800 deg. C for 2 h. The X-ray photoelectron spectroscopy and selected area electron diffraction analyses, along with the density-functional theory (DFT) calculations on the electronic structure, showed that WC 0.75 N 0.25 films were a single-phase of carbonitrides. After annealing, a significant decrease in hardness for the films was observed, being a result of point-defect annihilation as V b was in the range of floating to -120 V. However, when V b was in the range of -160 to -200 V, the hardness increased from ∼37 GPa for the as-deposited film to a maximum of ∼43 GPa for the annealed one. This increase in hardness after annealing might be attributed to age-hardening.

Note: Self-biased voltage to suppress secondary electrons by a ZnO varistor in a compact pulsed neutron generator

Science.gov (United States)

Yang, Z.; Li, X.; Li, J.; Long, J. D.; Lan, C. H.; Wang, T.; Dong, P.; He, J. L.

2017-03-01

A large amount of back streaming electrons will bring about a part of current drain on power supply, cause sparking or high-voltage breakdowns, and affect the neutron yield and waveform for a compact sealed-tube pulsed neutron generator. A novel idea which uses a ZnO varistor to provide a constant self-biased voltage to suppress the secondary electrons is introduced. The I-V curve for the ZnO varistor was measured in the experiment. The effects of suppressing the secondary electrons were investigated using a ZnO varistor, linear resistors, and an independent power supply, respectively. The results show that the secondary electrons are suppressed effectively by the compact ZnO varistor, while not increasing the size and the component of the device. It is a promising design for compact sealed-tube neutron generators.

Gyromagnetic nonlinear transmission line generator of high voltage pulses modulated at 4 GHz frequency with 1000 Hz pulse repetition rate

International Nuclear Information System (INIS)

Ulmasculov, M R; Sharypov, K A; Shunailov, S A; Shpak, V G; Yalandin, M I; Pedos, M S; Rukin, S N

2017-01-01

Results of testing of a generator based on a solid-state drive and the parallel gyromagnetic nonlinear transmission lines with external bias are presented. Stable rf-modulated high-voltage nanosecond pulses were shaped in each of the four channels in 1 s packets with 1000 Hz repetition frequencies. Pulse amplitude reaches -175 kV, at a modulation depth of rf-oscillations to 50 % and the effective frequency ∼4 GHz. (paper)

Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions

Directory of Open Access Journals (Sweden)

Chip-Hong Chang

2016-08-01

Full Text Available Static Random Access Memory (SRAM has recently been developed into a physical unclonable function (PUF for generating chip-unique signatures for hardware cryptography. The most compelling issue in designing a good SRAM-based PUF (SPUF is that while maximizing the mismatches between the transistors in the cross-coupled inverters improves the quality of the SPUF, this ironically also gives rise to increased memory read/write failures. For this reason, the memory cells of existing SPUFs cannot be reused as storage elements, which increases the overheads of cryptographic system where long signatures and high-density storage are both required. This paper presents a novel design methodology for dual-mode SRAM cell optimization. The design conflicts are resolved by using word-line voltage modulation, dynamic voltage scaling, negative bit-line and adaptive body bias techniques to compensate for reliability degradation due to transistor downsizing. The augmented circuit-level techniques expand the design space to achieve a good solution to fulfill several otherwise contradicting key design qualities for both modes of operation, as evinced by our statistical analysis and simulation results based on complementary metal–oxide–semiconductor (CMOS 45 nm bulk Predictive Technology Model.

Friends' knowledge of youth internalizing and externalizing adjustment: accuracy, bias, and the influences of gender, grade, positive friendship quality, and self-disclosure.

Science.gov (United States)

Swenson, Lance P; Rose, Amanda J

2009-08-01

Some evidence suggests that close friends may be knowledgeable of youth's psychological adjustment. However, friends are understudied as reporters of adjustment. The current study examines associations between self- and friend-reports of internalizing and externalizing adjustment in a community sample of fifth-, eighth-, and eleventh-grade youth. The study extends prior work by considering the degree to which friends' reports of youth adjustment are accurate (i.e., predicted by youths' actual adjustment) versus biased (i.e., predicted by the friend reporters' own adjustment). Findings indicated stronger bias effects than accuracy effects, but the accuracy effects were significant for both internalizing and externalizing adjustment. Additionally, friends who perceived their relationships as high in positive quality, friends in relationships high in disclosure, and girls perceived youths' internalizing symptoms most accurately. Knowledge of externalizing adjustment was not influenced by gender, grade, relationship quality, or self-disclosure. Findings suggest that friends could play an important role in prevention efforts.

High Voltage GaN Schottky Rectifiers

Energy Technology Data Exchange (ETDEWEB)

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

Theory and experimental study of biased charge collector for measuring HPIB

International Nuclear Information System (INIS)

He Xiaoping; Wang Haiyang; Sun Jianfeng; Yang Hailiang; Qiu Aici; Tang Junping; Li Jingya; Li Hongyu

2004-01-01

Structure of the biased charge collector for measuring HPIB (High-power ion beam) is introduced in this paper. The inner charge propagation process of HPIB in the biased charge collector was simulated with KARAT PIC code. The simulation results indicated that charge was neutralized but current was not neutralized in the biased charge collector. The influence of biased voltage and aperture diameter were also simulated. A -800V biased voltage can meet the requirement for measuring 500 keV HPIB, and this is consistent with the experimental results

Design of Low Voltage Low Power CMOS OP-AMPS with Rail-to-Rail Input/Output Swing

OpenAIRE

Gopalaiah, SV; Shivaprasad, AP; Panigrahi, Sukanta K

2004-01-01

A novel input and output biasing circuit to extend the input common mode (CM) voltage range and the output swing to rail-to-rail in a low voltage op-amp in standard CMOS technology is presented. The input biasing circuit uses a Switched Capacitor Based Attenuator (SCBA) approach to establish rail-to-rail common mode input voltage range. And the output biasing circuit uses an Output Driver (OD), with floating bias to give the rail-to-rail swing at output stage. Three different OD schemes in op...

High voltage capacitor design and the determination of solid dielectric voltage breakdown

International Nuclear Information System (INIS)

Hutapea, S.

1976-01-01

The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

International Nuclear Information System (INIS)

Manis-Levy, Hadar; Mintz, Moshe H.; Livneh, Tsachi; Zukerman Ido; Raveh, Avi

2014-01-01

The effect of radio-frequency (RF) or low-frequency (LF) bias voltage on the formation of amorphous hydrogenated carbon (a-C:H) films was studied on silicon substrates with a low methane (CH 4 ) concentration (2–10 vol.%) in CH 4 +Ar mixtures. The bias substrate was applied either by RF (13.56 MHz) or by LF (150 kHz) power supply. The highest hardness values (∼18–22 GPa) with lower hydrogen content in the films (∼20 at.%) deposited at 10 vol.% CH 4 , was achieved by using the RF bias. However, the films deposited using the LF bias, under similar RF plasma generation power and CH 4 concentration (50 W and 10 vol.%, respectively), displayed lower hardness (∼6–12 GPa) with high hydrogen content (∼40 at.%). The structures analyzed by Fourier Transform Infrared (FTIR) and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency (LF) bias under identical radio-frequency (RF) powered electrode and identical PECVD (plasma enhanced chemical vapor deposition) system configuration. (plasma technology)

Bias-dependent oscillatory electron transport of monatomic sulfur chains

KAUST Repository

Yu, Jing-Xin; Cheng, Yan; Sanvito, Stefano; Chen, Xiang-Rong

2012-01-01

The bias-dependent oscillatory electron transport of monatomic sulfur chains sandwiched between gold electrodes is investigated with density functional theory and non-equilibrium Green's function method. At zero bias, in contrast to the typical odd-even oscillations observed in most metallic chains, we find that the conductance oscillates with a period of four atoms. However, as the bias voltage is increased the current displays a two-atom periodicity. This emerges gradually, first for the longer chains and then, at voltages larger than 0.7 V, for lengths. The oscillatory behaviors are analyzed by the density of states and the energy-dependent and bias-dependent transmission coefficients. © 2012 American Institute of Physics.

Bias-dependent oscillatory electron transport of monatomic sulfur chains

KAUST Repository

Yu, Jing-Xin

2012-01-01

The bias-dependent oscillatory electron transport of monatomic sulfur chains sandwiched between gold electrodes is investigated with density functional theory and non-equilibrium Green\\'s function method. At zero bias, in contrast to the typical odd-even oscillations observed in most metallic chains, we find that the conductance oscillates with a period of four atoms. However, as the bias voltage is increased the current displays a two-atom periodicity. This emerges gradually, first for the longer chains and then, at voltages larger than 0.7 V, for lengths. The oscillatory behaviors are analyzed by the density of states and the energy-dependent and bias-dependent transmission coefficients. © 2012 American Institute of Physics.

Particle flows to shape and voltage surface discontinuities in the electron sheath surrounding a high voltage solar array in LEO

Science.gov (United States)

Metz, Roger N.

1991-01-01

This paper discusses the numerical modeling of electron flows from the sheath surrounding high positively biased objects in LEO (Low Earth Orbit) to regions of voltage or shape discontinuity on the biased surfaces. The sheath equations are derived from the Two-fluid, Warm Plasma Model. An equipotential corner and a plane containing strips of alternating voltage bias are treated in two dimensions. A self-consistent field solution of the sheath equations is outlined and is pursued through one cycle. The electron density field is determined by numerical solution of Poisson's equation for the electrostatic potential in the sheath using the NASCAP-LEO relation between electrostatic potential and charge density. Electron flows are calculated numerically from the electron continuity equation. Magnetic field effects are not treated.

Discreteness-induced resonances and ac voltage amplitudes in long one-dimensional Josephson junction arrays

International Nuclear Information System (INIS)

Duwel, A.E.; Watanabe, S.; Trias, E.; Orlando, T.P.; van der Zant, H.S.; Strogatz, S.H.

1997-01-01

New resonance steps are found in the experimental current-voltage characteristics of long, discrete, one-dimensional Josephson junction arrays with open boundaries and in an external magnetic field. The junctions are underdamped, connected in parallel, and dc biased. Numerical simulations based on the discrete sine-Gordon model are carried out, and show that the solutions on the steps are periodic trains of fluxons, phase locked by a finite amplitude radiation. Power spectra of the voltages consist of a small number of harmonic peaks, which may be exploited for possible oscillator applications. The steps form a family that can be numbered by the harmonic content of the radiation, the first member corresponding to the Eck step. Discreteness of the arrays is shown to be essential for appearance of the higher order steps. We use a multimode extension of the harmonic balance analysis, and estimate the resonance frequencies, the ac voltage amplitudes, and the theoretical limit on the output power on the first two steps. copyright 1997 American Institute of Physics

Front-side biasing of n-in-p silicon strip detectors

CERN Document Server

Baselga Bacardit, Marta; Dierlamm, Alexander Hermann; Dragicevic, Marko Gerhart; Konig, Axel; Pree, Elias; Metzler, Marius

2018-01-01

Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is affected by the resistance of the edge region and the sensor current. The measurements of n-in-p sensors performed to qualify this concept have shown that the voltage drop emerging from this resistance is negligible before irradiation. After irradiation, however, the resistivity of the edge region increases with fluence and saturates in the region of 10$^{7}\\,\\Omega$ at a fluence of 1$\\,\\cdot\\,10^{15}\\,$n$_{\\textrm{eq}}$cm$^{-2}$. The measurements are complemented by TCAD simulations and interpretations of the observed effects.

Transition of poloidal viscosity by electrode biasing in the Large Helical Device

International Nuclear Information System (INIS)

Kitajima, S.; Ishii, K.; Takahashi, H.

2012-11-01

Electrode biasing experiments were tried in various magnetic configurations on the Large Helical Device (LHD). The transitions of poloidal viscosity, which were accompanied with bifurcation phenomena characterized by a negative resistance, were clearly observed on LHD by the electrode biasing. The critical external driving force required for transition were compared with the local maximum in ion viscosity, and the radial resistivity before the transition also compared with the expected value from a neoclassical theory. The critical driving force increased and the radial resistivity decreased with the major radius of the magnetic axis R ax going outward. The configuration dependence of the transition condition and the radial resistivity qualitatively agreed with neoclassical theories. The radial electric field and the viscosity were also evaluated by the neoclassical transport code for a non-axisymmetric system, and estimated electrode voltage required for the transition, which was consistent with the experimental results. (author)

Conduction channels at finite bias in single-atom gold contacts

DEFF Research Database (Denmark)

Brandbyge, Mads; Kobayashi, Nobuhiko; Tsukada, Masaru

1999-01-01

We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilib......We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using...... of the eigenchannels projected onto tight-binding orbitals. We find a single almost fully transmitting channel with mainly s character for low bias while for high bias this channel becomes less transmitting and additional channels involving only d orbitals start to conduct....

Biasing of Capacitive Micromachined Ultrasonic Transducers.

Science.gov (United States)

Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

2017-02-01

Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm 2 ) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.

Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

International Nuclear Information System (INIS)

Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

2011-01-01

Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

Hard coatings on magnesium alloys by sputter deposition using a pulsed d.c. bias voltage

Energy Technology Data Exchange (ETDEWEB)

Reiners, G. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Griepentrog, M. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany)

1995-12-01

An increasing use of magnesium-based light-metal alloys for various industrial applications was predicted in different technological studies. Companies in different branches have developed machine parts made of magnesium alloys (e.g. cars, car engines, sewing and knitting machines). Hence, this work was started to evaluate the ability of hard coatings obtained by physical vapour deposition (PVD) in combination with coatings obtained by electrochemical deposition to protect magnesium alloys against wear and corrosion. TiN hard coatings were deposited onto magnesium alloys by unbalanced magnetron sputter deposition. A bipolar pulsed d.c. bias voltage was used to limit substrate temperatures to 180 C during deposition without considerable loss of microhardness and adhesion. Adhesion, hardness and load-carrying capacity of TiN coatings deposited directly onto magnesium alloys are compared with the corresponding values of TiN coatings deposited onto substrates which had been coated electroless with an Ni-P alloy interlayer prior to the PVD. (orig.)

Low voltage excess noise and shot noise in YBCO bicrystal junctions

DEFF Research Database (Denmark)

Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.

2002-01-01

The spectral density of background noise emitted by symmetric bicrystal YBaCuO Josephson junctions on sapphire substrates have been measured by a low noise cooled HEMT amplifier for bias voltages up to V approximate to 50 mV. At relatively low voltages V noise rise has been...... registered. At large bias voltages V > 30 mV a clear dependence of noise power. exactly coinciding to the asymptote of the Schottky shot noise function, has been observed for the first time. Experimental results are discussed in terms of multiple Andreev reflections which may take place in d...

Transition of poloidal viscosity by electrode biasing in the Large Helical Device

International Nuclear Information System (INIS)

Kitajima, S.; Ishii, K.; Sato, Y.; Kanno, M.; Tachibana, J.; Okamoto, A.; Sasao, M.; Takahashi, H.; Masuzaki, S.; Shoji, M.; Ashikawa, N.; Tokitani, M.; Yokoyama, M.; Suzuki, Y.; Satake, S.; Ido, T.; Shimizu, A.; Suzuki, C.; Inagaki, S.; Takayama, M.

2013-01-01

Electrode biasing experiments were carried out in various magnetic configurations on the Large Helical Device (LHD). The transitions of poloidal viscosity, which were accompanied with bifurcation phenomena characterized by a negative resistance in an electrode characteristic, were clearly observed on LHD by the electrode biasing. The critical external driving force required for transition was compared with the local maximum in ion viscosity, and the radial resistivity before the transition also compared with the expected value from a neoclassical theory. The critical driving force increased and the radial resistivity decreased with the major radius of the magnetic axis R ax going outwards. The configuration dependence of the transition condition and the radial resistivity qualitatively agreed with neoclassical theories. The radial electric field and the viscosity were also evaluated by the neoclassical transport code for a non-axisymmetric system, and estimated electrode voltage required for the transition, which was consistent with the experimental results. (paper)

Estimates of bias and uncertainty in recorded external dose

International Nuclear Information System (INIS)

Fix, J.J.; Gilbert, E.S.; Baumgartner, W.V.

1994-10-01

A study is underway to develop an approach to quantify bias and uncertainty in recorded dose estimates for workers at the Hanford Site based on personnel dosimeter results. This paper focuses on selected experimental studies conducted to better define response characteristics of Hanford dosimeters. The study is more extensive than the experimental studies presented in this paper and includes detailed consideration and evaluation of other sources of bias and uncertainty. Hanford worker dose estimates are used in epidemiologic studies of nuclear workers. A major objective of these studies is to provide a direct assessment of the carcinogenic risk of exposure to ionizing radiation at low doses and dose rates. Considerations of bias and uncertainty in the recorded dose estimates are important in the conduct of this work. The method developed for use with Hanford workers can be considered an elaboration of the approach used to quantify bias and uncertainty in estimated doses for personnel exposed to radiation as a result of atmospheric testing of nuclear weapons between 1945 and 1962. This approach was first developed by a National Research Council (NRC) committee examining uncertainty in recorded film badge doses during atmospheric tests (NRC 1989). It involved quantifying both bias and uncertainty from three sources (i.e., laboratory, radiological, and environmental) and then combining them to obtain an overall assessment. Sources of uncertainty have been evaluated for each of three specific Hanford dosimetry systems (i.e., the Hanford two-element film dosimeter, 1944-1956; the Hanford multi-element film dosimeter, 1957-1971; and the Hanford multi-element TLD, 1972-1993) used to estimate personnel dose throughout the history of Hanford operations. Laboratory, radiological, and environmental sources of bias and uncertainty have been estimated based on historical documentation and, for angular response, on selected laboratory measurements

Summary of transient high-voltage calculations for the FRX-C experiment

International Nuclear Information System (INIS)

Kewish, R.W. Jr.; Rej, D.J.

1982-06-01

Calculations of the electrical circuit equations are performed over a wide range of parameters corresponding to the FRX-C field-reversed THETA-pinch experiment at Los Alamos. Without any plasma or external damping, serious voltage doubling and quadrupling of the main capacitor bank charge voltage are observed. These oscillating high voltages are found to be adequately suppressed by the strategic placement of external snubber circuitry. On the other hand, no doubling of the THETA-pinch preionization bank charge voltage is found. Calculations of the equations for the z-pinch preionization circuit are also performed

Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se{sub 2} thin films investigated by conductive atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Shin, R.H.; Jo, W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Kim, D.W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Ewha Womans University, Department of Chemistry and Nanosciences, Seoul (Korea, Republic of); Yun, Jae Ho; Ahn, S. [Korea Institute of Energy Research, Daejeon (Korea, Republic of)

2011-09-15

Electrical transport properties on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) (Ga/(In+Ga) {approx}35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

Biasing vector network analyzers using variable frequency and amplitude signals

Science.gov (United States)

Nobles, J. E.; Zagorodnii, V.; Hutchison, A.; Celinski, Z.

2016-08-01

We report the development of a test setup designed to provide a variable frequency biasing signal to a vector network analyzer (VNA). The test setup is currently used for the testing of liquid crystal (LC) based devices in the microwave region. The use of an AC bias for LC based devices minimizes the negative effects associated with ionic impurities in the media encountered with DC biasing. The test setup utilizes bias tees on the VNA test station to inject the bias signal. The square wave biasing signal is variable from 0.5 to 36.0 V peak-to-peak (VPP) with a frequency range of DC to 10 kHz. The test setup protects the VNA from transient processes, voltage spikes, and high-frequency leakage. Additionally, the signals to the VNA are fused to ½ amp and clipped to a maximum of 36 VPP based on bias tee limitations. This setup allows us to measure S-parameters as a function of both the voltage and the frequency of the applied bias signal.

Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

International Nuclear Information System (INIS)

Bora, B.

2015-01-01

On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found to work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage

Spin-polarization and spin-flip in a triple-quantum-dot ring by using tunable lateral bias voltage and Rashba spin-orbit interaction

Energy Technology Data Exchange (ETDEWEB)

Molavi, Mohamad, E-mail: Mo_molavi@yahoo.com [Faculty of Physics, Kharazmi University, Tehran (Iran, Islamic Republic of); Faizabadi, Edris, E-mail: Edris@iust.ac.ir [School of Physics, Iran University of Science and Technology, 16846 Tehran (Iran, Islamic Republic of)

2017-04-15

By using the Green's function formalism, we investigate the effects of single particle energy levels of a quantum dot on the spin-dependent transmission properties through a triple-quantum-dot ring structure. In this structure, one of the quantum dots has been regarded to be non-magnetic and the Rashba spin-orbit interaction is imposed locally on this dot while the two others can be magnetic. The on-site energy of dots, manipulates the interference of the electron spinors that are transmitted to output leads. Our results show that the effects of magnetic dots on spin-dependent transmission properties are the same as the difference of on-site energies of the various dots, which is applicable by a controllable lateral bias voltage externally. Besides, by tuning the parameters such as Rashba spin-orbit interaction, and on-site energy of dots and magnetic flux inside the ring, the structure can be indicated the spin-flip effect and behave as a full spin polarizer or splitter. - Highlights: • The effects of magnetic dots on spin-dependent transmission properties are the same as the difference of on-site energies of the various dots. • In the situation that the QDs have non-zero on-site energies, the system can demonstrate the full spin-polarization. • By tuning the Rashba spin-orbit strength and magnetic flux encountered by the ring the system operates as a Stern-Gerlach apparatus.

New method for determining avalanche breakdown voltage of silicon photomultipliers

International Nuclear Information System (INIS)

Chirikov-Zorin, I.

2017-01-01

The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

Luminous flux improvement of xenon fluorescent lamps by applying synchronized high-voltage pulse to the auxiliary external electrode

Energy Technology Data Exchange (ETDEWEB)

Motomura, Hideki; Oka, Kojiro; Sogabe, Toru; Jinno, Masafumi, E-mail: hmoto@mayu.ee.ehime-u.ac.jp [Department of Electrical and Electronic Engineering, Ehime University 3 Bunkyo-cho, Matsuyama, Ehime 790-8577 (Japan)

2011-06-08

As the environmental awareness of people becomes stronger, the demand for mercury-free light sources also becomes stronger. The authors have been developing cold cathode fluorescent lamps in which xenon gas is filled as an ultraviolet radiator instead of mercury. Previously the authors reported the luminous flux enhancement method using a grounded auxiliary external electrode (AEE). In this paper, in order to improve the luminous flux much more, a positive voltage pulse which was synchronized to the main driving negative voltage pulse was applied to the AEE. As a result, the maximum input power increased under which the positive column did not constrict and the luminous flux improved by 70% at the xenon filling pressure of 6.7 kPa. It is proved that the positive voltage pulse application to the AEE with the amplitude of more than 2 kV expands the positive column in the radial direction. It is attributed to the phenomenon that the residual ions and electrons, which are generated by dielectric barrier discharge between the AEE and the anode during the falling edge of the negative pulse to the cathode, spread the discharge path from the anode towards the AEE during the cold cathode discharge mode. By increasing the xenon filling pressure, luminous efficacy was improved to 25 lm W{sup -1}.

Indium tin oxide thin films by bias magnetron rf sputtering for heterojunction solar cells application

International Nuclear Information System (INIS)

Zhao Liang; Zhou Zhibin; Peng Hua; Cui Rongqiang

2005-01-01

In this investigation ITO thin films were prepared by bias magnetron rf sputtering technique at substrate temperature of 180 deg. C and low substrate-target distance for future a-Si:H/c-Si heterojunction (HJ) solar cells application. Microstructure, surface morphology, electrical and optical properties of these films were characterized and analyzed. The effects of ion bombardments on growing ITO films are well discussed. XRD analysis revealed a change in preferential orientation of polycrystalline structure from (2 2 2) to (4 0 0) plane with the increase of negative bias voltage. Textured surface were observed on AFM graphs of samples prepared at high negative bias. Hall measurements showed that the carrier density and Hall mobility of these ITO films are sensitive to the bias voltage applied. We attributed these effects to the sensitivity of energy of Ar + ions bombarding on growing films to the applied bias voltage in our experiments. At last the figure of merit was calculated to evaluate the quality of ITO thin films, the results of which show that sample prepared at bias voltage of -75 V is good to be used in HJ cells application

Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

Science.gov (United States)

Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

2018-03-01

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.

Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

Energy Technology Data Exchange (ETDEWEB)

Murata, Koichi; Mitomo, Satoshi; Matsuda, Takuma; Yokoseki, Takashi [Saitama University, Sakuraku (Japan); National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Makino, Takahiro; Onoda, Shinobu; Takeyama, Akinori; Ohshima, Takeshi [National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki (Japan); Okubo, Shuichi; Tanaka, Yuki; Kandori, Mikio; Yoshie, Toru [Sanken Electric Co., Ltd., Niiza, Saitama (Japan); Hijikata, Yasuto [Saitama University, Sakuraku (Japan)

2017-04-15

Gamma-ray irradiation into vertical type n-channel hexagonal (4H)-silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) was performed under various gate biases. The threshold voltage for the MOSFETs irradiated with a constant positive gate bias showed a large negative shift, and the shift slightly recovered above 100 kGy. For MOSFETs with non- and a negative constant biases, no significant change in threshold voltage, V{sub th}, was observed up to 400 kGy. By changing the gate bias from positive bias to either negative or non-bias, the V{sub th} significantly recovered from the large negative voltage shift induced by 50 kGy irradiation with positive gate bias after only 10 kGy irradiation with either negative or zero bias. It indicates that the positive charges generated in the gate oxide near the oxide-SiC interface due to irradiation were removed or recombined instantly by the irradiation under zero or negative biases. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Quantifying transition voltage spectroscopy of molecular junctions: Ab initio calculations

DEFF Research Database (Denmark)

Chen, Jingzhe; Markussen, Troels; Thygesen, Kristian Sommer

2010-01-01

Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform extensive ab initio calculations of the nonlinear current...

Two coupled Josephson junctions: dc voltage controlled by biharmonic current

International Nuclear Information System (INIS)

Machura, L; Spiechowicz, J; Kostur, M; Łuczka, J

2012-01-01

We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junctions (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters such as the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g. changing the dc voltages across the first and second junctions from positive to negative values and vice versa. (paper)

Programming Arduino to Control Bias Voltages to Temperature-Depedndent Gamma-ray Detectors aboard TRYAD Mission

Science.gov (United States)

Stevons, C. E.; Jenke, P.; Briggs, M. S.

2016-12-01

Terrestrial Gamma-ray Flashes (TGFs) are sub-millisecond gamma-ray flashes that are correlated with lightning have been observed with numerous satellites since their discovery in the early 1990s. Although substantial research has been conducted on TGFs, puzzling questions regarding their origin are still left unanswered. Consequently, the Terrestrial RaYs Analysis and Detection (TRYAD) mission is designed to solve many issues about TGFs by measuring the beam profile and orientation of TGFs in low Earth orbit. This project consists of sending two CubeSats into low-Earth orbit where they will independently sample TGF beams. Both of the TRYAD CubeSats will contain a gamma-ray detector composed of lead doped plastic scintillator coupled to silicon photomultiplier (SiPM) arrays. The gain readings of the SiPMs vary with temperature and the bias voltage must be corrected to compensate. Using an Arduino micro-controller, circuitry and software was developed to control the gain in response to the resistance of a thermistor. I will present the difficulties involved with this project along with our solutions.

Variation of microchannel plate resistance with temperature and applied voltage

International Nuclear Information System (INIS)

Pearson, J.F.; Fraser, G.W.; Whiteley, M.J.

1987-01-01

The resistance of microchannel plate electron multiplier is well known to be a function of both applied voltage and detector temperature. We show that the apparent variation of resistance with bias voltage is simply due to plate temperature increases resulting from resistive heating. (orig.)

Electrode and limiter biasing experiments on the tokamak ISTTOK

International Nuclear Information System (INIS)

Silva, C.; Figueiredo, H.; Cabral, J.A.C.; Nedzelsky, I.; Varandas, C.A.F.

2003-01-01

In this contribution limiter and electrode biasing experiments are compared, in particular in what concerns their effects on the edge plasma parameters. For electrode AC bias a substantial increase (>50%) in the average plasma density is observed with positive voltage, without significant changes in the edge density, leading to steeper profiles. The ratio n e /Hα also increases significantly (>20%), indicating an improvement in gross particle confinement. The plasma potential profile is strongly modified as both the edge E r and its shear increase significantly. For positive limiter bias an increase in the average plasma density and the radiation losses is observed, resulting in almost no modification, or a slight, in particle confinement. Preliminary results of simultaneous electrode and limiter bias experiments show that the control of the plasma potential profile is very limited, since negative voltages do not modify the plasma parameters significantly. (author)

Bias voltage dependence of molecular orientation of dialkyl ketone and fatty acid alkyl ester at the liquid–graphite interface

Energy Technology Data Exchange (ETDEWEB)

Hibino, Masahiro, E-mail: hibino@mmm.muroran-it.ac.jp [Department of Applied Sciences, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Tsuchiya, Hiroshi [Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)

2014-10-30

Graphical abstract: - Highlights: • Self-assembled monolayers (SAMs) of 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) were formed on a graphite surface at the liquid–solid interface. • Orientations of the molecules in SAMs on the substrate were studied by scanning tunneling microscopy. • A perpendicular carbon skeleton-plane orientation with the CO pointing up on the surface is favorable for a substrate with negative charge and vice versa. - Abstract: Molecular orientations of self-assembled 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) monolayers adsorbed on a graphite surface were studied by scanning tunneling microscopy (STM) at the liquid–solid interface. At a positive sample bias, the central areas of the dialkyl ketone and fatty acid alkyl ester molecules in the STM images appeared as two bright regions on both sides of a dim spot and a bright region on one side of a dim spot, whereas at a negative sample bias, the areas appeared dim. This contrast variation indicates that a perpendicular carbon skeleton-plane orientation with the CO pointing down on the surface is favorable for a substrate with positive charge and vice versa because of the greater electronegativity of the oxygen atom. Upon the bias voltage reversal, the delay time for the STM image contrast change in the region was observed on a time scale of minutes. The difference between the delay time lengths for the direction of bias polarity change indicates that the perpendicular configuration with CO pointing up is more stable than that with CO pointing down. These results indicate that the use of an electric field along a direction vertical to the monolayer on the substrate provides control over the orientations of the molecules between two stable states at the liquid–solid interface.

Application of a substrate bias to control the droplet density on Cu(In,Ga)Se{sub 2} thin films grown by Pulsed Electron Deposition

Energy Technology Data Exchange (ETDEWEB)

Rampino, S. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Pattini, F., E-mail: rampino@imem.cnr.it [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Malagù, C.; Pozzetti, L. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1-44122 Ferrara (Italy); Stefancich, M. [LENS Laboratory, Masdar Institute of Science and Technology, Masdar City, PO Box 54224, Abu Dhabi (United Arab Emirates); Bronzoni, M. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma (Italy)

2014-07-01

One of the main shortcomings in the fabrication of thin-film solar cells by pulsed high-energy deposition techniques (i.e. Pulsed Laser Deposition or Pulsed Electron Deposition — PED), is the presence of a significant number of particulates on the film surface. This affects the morphological properties of the cell active layers and, ultimately, the performance of the final device. To reduce the density of these defects, we deposited a Cu(In,Ga)Se{sub 2} (CIGS) thin film by PED and studied the effect on the film morphology when a DC bias was applied between the substrate and the target. Our results show that a negative substrate voltage, comprised between 0 and − 300 V, can not only reduce the droplet density on the CIGS film surface of about one order of magnitude with respect to the standard unbiased case (from 6 × 10{sup 5} to 5 × 10{sup 4} cm{sup −2}), but also lower the maximum particulate size and the surface smoothness. When a positive voltage is applied, we observed that a significant increase in the droplet surface density (up to 10{sup 8} cm{sup −2}) occurs. The abrupt change in the preferred crystal orientation (switching from (112) to (220)/(204) by applying negative and positive biases, respectively) is also a direct consequence of the applied DC voltage. These results confirm that the external DC bias could be used as an additional parameter to control the physical properties of thin films grown by PED. - Highlights: • Cu(In,Ga)Se{sub 2} (CIGS) films were grown by Pulsed Electron Deposition (PED). • Positive and negative DC biases were applied between the target and the substrate. • The droplet density can be reduced by one order of magnitude by DC negative bias. • Chemical composition and grain orientation of CIGS are influenced by the DC bias. • The DC bias can be an additional parameter of PED for controlling the film properties.

Bias-stress characterization of solution-processed organic field-effect transistor based on highly ordered liquid crystals

Science.gov (United States)

Kunii, M.; Iino, H.; Hanna, J.

2017-06-01

Bias-stress effects in solution-processed, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) field effect transistors (FETs) are studied under negative and positive direct current bias. The bottom gate, bottom contact polycrystalline Ph-BTBT-10 FET with a hybrid gate dielectric of polystyrene and SiO2 shows high field effect mobility as well as a steep subthreshold slope when fabricated with a highly ordered smectic E liquid crystalline (SmE) film as a precursor. Negative gate bias-stress causes negative threshold voltage shift (ΔVth) for Ph-BTBT-10 FET in ambient air, but ΔVth rapidly decreases as the gate bias decreases and approaches to near zero when the gate bias goes down to 9 V in amplitude. In contrast, positive gate bias-stress causes negligible ΔVth even with a relatively high bias voltage. These results conclude that Ph-BTBT-10 FET has excellent bias-stress stability in ambient air in the range of low to moderate operating voltages.

Piezo Voltage Controlled Planar Hall Effect Devices.

Science.gov (United States)

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-06-22

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

Science.gov (United States)

Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

2014-04-24

A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A system for biasing a differential amplifier

International Nuclear Information System (INIS)

Barbier, Daniel; Ittel, J.M.; Poujois, Robert

1975-01-01

This invention concerns a system for biasing a differential amplifier. It particularly applies to the integrated differential amplifiers designed with MOS field effect transistors. Variations in the technological parameters may well cause the amplifying transistors to work outside their usual operational area, in other words outside the linear part of the transfer characteristic. To ensure that these transistors function correctly, it is necessary that the value of the voltage difference at the output be equally null. To do this and to centre on the so called 'rest' point of the amplifier transfer charateristic, the condition will be set that the output potentials of each amplifier transistor should have a zero value or a constant value as sum. With this in view, the bias on the source (generally a transistor powered by its grid bias voltage) supplying current to the two amplifying transistors fitted in parallel, is permanently adjusted in a suitable manner [fr

Nonlinear rolling of a biased ship in a regular beam wave under external and parametric excitations

Energy Technology Data Exchange (ETDEWEB)

El-Bassiouny, A.F. [Mathematics Dept., Benha Univ., Benha (Egypt)

2007-10-15

We consider a nonlinear oscillator simultaneously excited by external and parametric functions. The oscillator has a bias parameter that breaks the symmetry of the motion. The example that we use to illustrate the problem is the rolling oscillation of a biased ship in longitudinal waves, but many mechanical systems display similar features. The analysis took into consideration linear, quadratic, cubic, quintic, and seven terms in the polynomial expansion of the relative roll angle. The damping moment consists of the linear term associated with radiation and viscous damping and a cubic term due to frictional resistance and eddies behind bilge keels and hard bilge corners. Two methods (the averaging and the multiple time scales) are used to investigate the first-order approximate analytical solution. The modulation equations of the amplitudes and phases are obtained. These equations are used to obtain the stationary state. The stability of the proposed solution is determined applying Liapunov's first method. Effects of different parameters on the system behaviour are investigated numerically. Results are presented graphically and discussed. The results obtained by two methods are in excellent agreement. (orig.)

Study on the drain bias effect on negative bias temperature instability degradation of an ultra-short p-channel metal-oxide-semiconductor field-effect transistor

International Nuclear Information System (INIS)

Yan-Rong, Cao; Xiao-Hua, Ma; Yue, Hao; Shi-Gang, Hu

2010-01-01

This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Voltage control of cavity magnon polariton

Energy Technology Data Exchange (ETDEWEB)

Kaur, S., E-mail: kaurs3@myumanitoba.ca; Rao, J. W.; Gui, Y. S.; Hu, C.-M., E-mail: hu@physics.umanitoba.ca [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Yao, B. M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

2016-07-18

We have experimentally investigated the microwave transmission of the cavity-magnon-polariton (CMP) generated by integrating a low damping magnetic insulator onto a 2D microwave cavity. The high tunability of our planar cavity allows the cavity resonance frequency to be precisely controlled using a DC voltage. By appropriately tuning the voltage and magnetic bias, we can observe the cavity photon magnon coupling and the magnetic coupling between a magnetostatic mode and the generated CMP. The dispersion of the generated CMP was measured by either tuning the magnetic field or the applied voltage. This electrical control of CMP may open up avenues for designing advanced on-chip microwave devices that utilize light-matter interaction.

Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

Science.gov (United States)

Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

2018-04-01

Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

Science.gov (United States)

Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

2018-06-01

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

Emissive limiter bias experiment for improved confinement of tokamaks

International Nuclear Information System (INIS)

Choe, W.; Ono, M.; Darrow, D.S.; Pribyl, P.A.; Liberati, J.R.; Taylor, R.J.

1992-01-01

Experiments have been performed in Ohmic discharges of the UCLA CCT tokamak with a LaB 6 biased limiter, capable of emitting energetic electrons as a technique to improve confinement in tokamaks. To study the effects of emitted electrons, the limiter position, bias voltage, and plasma position were varied. The results have shown that the plasma positioning with respect to the emissive limiter plays an important role in obtaining H-mode plasmas. The emissive cathode must be located close to the last closed flux surface in order to charge up the plasma. As the cathode is moved closer to the wall, the positioning of the plasma becomes more critical since the plasma can easily detach from the cathode and reattach to the wall, resulting in the termination of H-mode. The emissive capability appears to be important for operating at lower bias voltage and reducing impurity levels in the plasma. With a heated cathode, transition to H-mode was observed for V bias ≤ 50 V and I inj ≥ 30 A. At a lower cathode heater current, a higher bias voltage is required for the transition. Moreover, with a lower cathode heater current, the time delay for inducing H-mode becomes longer, which can be attributed to the required time for the self-heating of the cathode to reach the emissive temperature. From this result, we conclude that the capacity for emission can significantly improve the performance of limiter biasing for inducing H-mode transition. With L-mode plasmas, the injection current flowing out of the cathode was generally higher than 100 A

Profile Control by Biased Electrodes in Large Diameter RF Produced Pl asma

Science.gov (United States)

Shinohara, Shunjiro; Matsuoka, Norikazu; Yoshinaka, Toshiro

1998-10-01

Control of the plasma profile has been carried out, using the voltage biasing method in the large diameter (45 cm) RF (radio frequency) produced plasma in the presence of the uniform magnetic field (less than 1200 G). Under the low filling pressure condition of 0.16 mTorr, changing the biasing voltages to the three individual end plates with concentric circular ring shapes, the radial electron density (about 10^10 cm-3) profile could be changed from the hollow to the peaked one. On the contrary, the nearly flat electron temperature (several eV) profile did not change appreciably. The azimuthal rotation velocity measured by the Mach probe, i.e. directional probe, showed the different radial profiles (but nearly uniform along the axis) depending on the biasing voltage. This velocity became slower with the low magnetic field (less than 200 G) or in the higher pressure regime up to 20 mTorr with the higher electron density. The experimental results by other biasing methods will also be presented.

AC bias operation of the perpendicular biased ferrite tuned cavity for the TRIUMF KAON Factory booster synchrotron

International Nuclear Information System (INIS)

Poirier, R.L.; Enegren, T.A.; Enchevich, I.B.

1991-05-01

The RF cavity for the booster synchrotron requires a frequency swing from 46 MHz at a repetition rate of 50 Hz and a maximum accelerating gap voltage of 65 kV. A DC biased prototype cavity built at LANL using perpendicular-biased yttrium-garnet ferrites, rather than the more conventional parallel-biased NiZn ferrites, has now undergone major reconstruction at TRIUMF for AC bias operation. RF signal level measurements have shown that the frequency swing at a repetition rate of 50 Hz can be accomplished and still handle the eddy current losses in the cavity structures with minimal effect on the magnetizing field. The prototype cavity is now undergoing high power RF tests with full power AC bias operation. The results of these tests and operational experience is reported. (Author) ref., 6 figs

Strong mechanically induced effects in DC current-biased suspended Josephson junctions

Science.gov (United States)

McDermott, Thomas; Deng, Hai-Yao; Isacsson, Andreas; Mariani, Eros

2018-01-01

Superconductivity is a result of quantum coherence at macroscopic scales. Two superconductors separated by a metallic or insulating weak link exhibit the AC Josephson effect: the conversion of a DC voltage bias into an AC supercurrent. This current may be used to activate mechanical oscillations in a suspended weak link. As the DC-voltage bias condition is remarkably difficult to achieve in experiments, here we analyze theoretically how the Josephson effect can be exploited to activate and detect mechanical oscillations in the experimentally relevant condition with purely DC current bias. We unveil how changing the strength of the electromechanical coupling results in two qualitatively different regimes showing dramatic effects of the oscillations on the DC-voltage characteristic of the device. These include the appearance of Shapiro-type plateaus for weak coupling and a sudden mechanically induced retrapping for strong coupling. Our predictions, measurable in state-of-the-art experimental setups, allow the determination of the frequency and quality factor of the resonator using DC only techniques.

High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography

Energy Technology Data Exchange (ETDEWEB)

Balci, Soner; Czaplewski, David A.; Jung, Il Woong; Kim, Ju-Hyung; Hatami, Fariba; Kung, Patrick; Kim, Seongsin Margaret

2017-07-01

Besides having perfect control on structural features, such as vertical alignment and uniform distribution by fabricating the wires via e-beam lithography and etching process, we also investigated the THz emission from these fabricated nanowires when they are applied DC bias voltage. To be able to apply a voltage bias, an interdigitated gold (Au) electrode was patterned on the high-quality InGaAs epilayer grown on InP substrate bymolecular beam epitaxy. Afterwards, perfect vertically aligned and uniformly distributed nanowires were fabricated in between the electrodes of this interdigitated pattern so that we could apply voltage bias to improve the THz emission. As a result, we achieved enhancement in the emitted THz radiation by ~four times, about 12 dB increase in power ratio at 0.25 THz with a DC biased electric field compared with unbiased NWs.

Externally controlled local magnetic field in a conducting mesoscopic ring coupled to a quantum wire

International Nuclear Information System (INIS)

Maiti, Santanu K.

2015-01-01

In the present work, the possibility of regulating local magnetic field in a quantum ring is investigated theoretically. The ring is coupled to a quantum wire and subjected to an in-plane electric field. Under a finite bias voltage across the wire a net circulating current is established in the ring which produces a strong magnetic field at its centre. This magnetic field can be tuned externally in a wide range by regulating the in-plane electric field, and thus, our present system can be utilized to control magnetic field at a specific region. The feasibility of this quantum system in designing spin-based quantum devices is also analyzed

A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

KAUST Repository

Tayyab, Umais; Alzaher, Hussain A.

2017-01-01

An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC

Application of the voltage biased digital relay for the optimal protection of high inertia drive induction motors

International Nuclear Information System (INIS)

Choi, D. B.

1999-01-01

This paper describes typical protection schemes for large-size high inertia drive motor that are generally rotor thermal limited. Difficult and variable starting conditions of the large-size high inertia drive motor and compromises in the selection and setting of the protective devices are frequently encountered. The motors that typically encounter severe starting duty and present difficulties in achieving full motor protection are reactor coolant pumps (RCPs), blowers and compressors. For difficult starting conditions that are encountered by the large-size high inertia drive motors, state-of-the-art computer based calculations are capable of providing realistic predictions of the band of margin available for applying the protective relay. Based on the analysis of starting characteristics of large-size high inertia drive motors, this paper recommends that the optimal protection scheme for high inertia drive motors for nuclear power plants can be achieved by using the voltage biased digital relay instead of a speed switch and conventional overcurrent relays. (author)

Analysis of the giant magnetostrictive actuator with strong bias magnetic field

Energy Technology Data Exchange (ETDEWEB)

Xue, Guangming, E-mail: yy0youxia@163.com; He, Zhongbo; Li, Dongwei; Yang, Zhaoshu; Zhao, Zhenglong

2015-11-15

Giant magnetostrictive actuator with strong bias magnetic field is designed to control the injector bullet valve opening and closing. The relationship between actuator displacement amplitude and input signal direction is analyzed. And based on the approximate linearity of strain-magnetic field, second-order system model of the actuator displacement is established. Experimental system suitable for the actuator is designed. The experimental results show that, the square voltage amplitude being 12 V, the actuator displacement amplitude is about 17 μm with backward direction signal input while being 1.5 μm under forward direction signal. From the results, the suitable input direction is confirmed to be backward. With exciting frequncy lower than 200 Hz, the error between the model and experimental result is less than 1.7 μm. So the model is validated under the low-frequency signal input. The testing displacement-voltage curves are approximately straight lines. But due to the biased position, the line slope and the displacement-voltage linearity change as the input voltage changes. - Highlights: • Giant magnetostrictive actuator with strong bias magnetic field is designed. • The relationship between actuator displacement amplitude and input current direction is analyzed. • The model of the actuator displacement is established and its accuracy is verified by the test. • The actuator displacement-voltage curves are achieved by the test, and the curves’ characteristics are analyzed theoretically.

Solvent-induced crystallization for hybrid perovskite thin-film photodetector with high-performance and low working voltage

International Nuclear Information System (INIS)

Hu, Wei; Yang, Shuzhen; Fan, Peng; Pan, Anlian; Wu, Runsheng; Yang, Junliang

2017-01-01

Organometal trihalide perovskites have emerged as a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. Using a high-quality perovskite thin film prepared by solvent-induced crystallization method and adopting a novel device configuration based on photon recycling effect, a perovskite thin-film photodetector has been constructed with the highest external quantum efficiency of 4.1  ×  10 4 % and responsivity of 219 A W −1 at a low bias of 1 V so far. The device working mechanism was further disclosed based on energy band bending model. The high-performance and low working-voltage perovskite thin-film photodetector will find potential applications in photodetection and optoelectronic integrated circuits. (paper)

Complete low power controller for high voltage power systems

International Nuclear Information System (INIS)

Sumner, R.; Blanar, G.

1997-01-01

The MHV100 is a custom CMOS integrated circuit, developed for the AMS experiment. It provides complete control for a single channel high voltage (HV) generator and integrates all the required digital communications, D to A and A to D converters, the analog feedback loop and output drivers. This chip has been designed for use in both distributed high voltage systems or for low cost single channel high voltage systems. The output voltage and current range is determined by the external components

Hot Cathode Biasing Experiment in Compact Helical System

Energy Technology Data Exchange (ETDEWEB)

Takahashi, H.; Utoh, H.; Kitajima, S.; Isobe, M.; Suzuki, C.; Takeuchi, M.; Ikeda, R.; Tanaka, Y.; Yokoyama, M.; Toi, K.; Okamura, S.; Sasao, M.

2005-07-01

One of the H mode characteristics is a sudden formation of a radial electric field at LH transition. To date, H mode was widely observed in various tokamaks [1-3] and stellarator devices [4, 5], and the importance of the radial electric field has been shown in both experiments and in theory. However, it is difficult to investigate the behaviour of a radial electric field in detail at LH transition induced by NBI heating because the radial electric field is self-organised and changes suddenly. Electrode bias experiments are methods for active control of the radial electric field. The electrode bias experiment has the advantage of the ability to control the radial electric field externally by controlling the electrode voltage and/or the electrode current and to estimate the driving force from the electrode current. The neoclassical theory indicates the criterion of LH transition from the viewpoint of the ion viscosity. In this theory, the ion viscosity has local maxima against the rotation velocity [6-8]. When the driving force in the poloidal direction exceeds a critical value, the poloidal rotation velocity increases rapidly and the plasma undergoes a transition to the H mode. This means that the LH transition mechanism is a bifurcation phenomenon due to the existence of local maxima in the ion viscosity. Here, we carried out the electrode biasing experiment in TU-Heliac and CHS to investigate the effect of ripple structure on ion viscosity and to clarify the role of ion viscosity in triggering the transition from the degraded state to enhanced confinement. (Author)

Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

2008-06-15

To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

Food or Thought? Assessing Internal and External Factors Affecting Evaluations of Instructor Effectiveness

Science.gov (United States)

Wood, John; Kiggins, Ryan; Kickham, Kenneth

2017-01-01

Within the broader literature concerned with potential bias in student measures of instructor effectiveness, two broad types of bias have been shown to operate in a course: internal and external. Missing is an assessment of the relative influence of each bias type in the classroom. Do internal or external types of bias matter more or less to…

“Virtual IED sensor” at an rf-biased electrode in low-pressure plasma

Energy Technology Data Exchange (ETDEWEB)

Bogdanova, M. A.; Zyryanov, S. M. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, SINP MSU, Moscow (Russian Federation); Faculty of Physics, Moscow State University, MSU, Moscow (Russian Federation); Lopaev, D. V.; Rakhimov, A. T. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, SINP MSU, Moscow (Russian Federation)

2016-07-15

Energy distribution and the flux of the ions coming on a surface are considered as the key-parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) measurements at the treated surface during plasma processing are often hardly possible, there is an opportunity for virtual ones. This work is devoted to the possibility of such indirect IED and ion flux measurements at an rf-biased electrode in low-pressure rf plasma by using a “virtual IED sensor” which represents “in-situ” IED calculations on the absolute scale in accordance with a plasma sheath model containing a set of measurable external parameters. The “virtual IED sensor” should also involve some external calibration procedure. Applicability and accuracy of the “virtual IED sensor” are validated for a dual-frequency reactive ion etching (RIE) inductively coupled plasma (ICP) reactor with a capacitively coupled rf-biased electrode. The validation is carried out for heavy (Ar) and light (H{sub 2}) gases under different discharge conditions (different ICP powers, rf-bias frequencies, and voltages). An EQP mass-spectrometer and an rf-compensated Langmuir probe (LP) are used to characterize plasma, while an rf-compensated retarded field energy analyzer (RFEA) is applied to measure IED and ion flux at the rf-biased electrode. Besides, the pulsed selfbias method is used as an external calibration procedure for ion flux estimating at the rf-biased electrode. It is shown that pulsed selfbias method allows calibrating the IED absolute scale quite accurately. It is also shown that the “virtual IED sensor” based on the simplest collisionless sheath model allows reproducing well enough the experimental IEDs at the pressures when the sheath thickness s is less than the ion mean free path λ{sub i} (s < λ{sub i}). At higher pressure (when s > λ{sub i}), the difference between calculated and experimental IEDs due to ion collisions in the sheath is observed in the low

Rf-biasing of highly idealized plasmas

NARCIS (Netherlands)

Westermann, R.H.J.; Blauw, M.A.; Goedheer, W.J.; Sanden, van de M.C.M.; Schmidt, J.; Simek, M.; Pekarek, S.; Prukner, V.

2007-01-01

Remote plasmas, which are subjected to a radio-frequency (RF) biased surface, have been investigated theoretically and experimentally for decades. The relation between the complex power (DC) voltage characteristics, the ion energy distribution and control losses of the ion bombardment are of

Is there bias in editorial choice? Yes

OpenAIRE

Moustafa, Khaled

2018-01-01

Nature has recently published a Correspondence claiming the absence of fame biases in the editorial choice. The topic is interesting and deserves a deeper analysis than it was presented because the reported brief analysis and its conclusion are somewhat biased for many reasons, some of them are discussed here. Since the editorial assessment is a form of peer-review, the biases reported on external peer-reviews would, thus, apply to the editorial assessment, too. The biases would be proportion...

Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth

NARCIS (Netherlands)

Profijt, H. B.; M. C. M. van de Sanden,; Kessele, W. M. M.

2013-01-01

Two substrate-biasing techniques, i.e., substrate-tuned biasing and RF biasing, have been implemented in a remote plasma configuration, enabling control of the ion energy during plasma-assisted atomic layer deposition (ALD). With both techniques, substrate bias voltages up to -200 V have been

Voltage-Ratio Calibration System up to 50 kHz

Science.gov (United States)

Trigo, Leonardo; Slomovitz, Daniel; Faverio, Carlos; Kyriazis, Gregory

2018-03-01

This paper describes a voltage-ratio measuring system that can be used up to 50 kHz with high accuracy. It is based on two Keysight 3458A digital multimeters, working in DCV sampling mode. An external trigger based on a rubidium clock, drives both digital multimeters. It is applied to the calibration of a set of voltage dividers with primary voltages from 4 V to 1024 V.

Effects of negative bias on structure and surface topography of titanium films deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Duan Linglong

2008-01-01

Pure Ti films were fabricated by bias sputtering. The deposition rate, the density and the surface topography of the Ti films at different negative bias were studied. The results show that the deposition rate is weakly affected when the bias power is low. As the bias voltage increases, the deposition rate decreases strongly due to the increase of the layer density and the resputtering phenomena. The film density increased and saturated to nearly bulk value at a bias voltage of -119.1 V. SEM view indicates that the columnar-type structure of Ti films can be destroyed by applying negative bias. The experiments demonstrated that a dense Ti film with more smooth surface can be produced by applying negative bias. (authors)

Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor

International Nuclear Information System (INIS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Lin, Kun-Yao; Wu, Yi-Chun; Huang, Shih-Feng; Chiang, Cheng-Lung; Chen, Po-Lin; Lai, Tzu-Chieh; Lo, Chang-Cheng; Lien, Alan

2014-01-01

This study investigates the impact of gate bias stress with and without light illumination in a-Si:H thin film transistors. It has been observed that the I–V curve shifts toward the positive direction after negative and positive gate bias stress due to interface state creation at the gate dielectric. However, this study found that threshold voltages shift negatively and that the transconductance curve maxima are anomalously degraded under illuminated positive gate bias stress. In addition, threshold voltages shift positively under illuminated negative gate bias stress. These degradation behaviors can be ascribed to charge trapping in the passivation layer dominating degradation instability and are verified by a double gate a-Si:H device. - Highlights: • There is abnormal V T shift induced by illuminated gate bias stress in a-Si:H thin film transistors. • Electron–hole pair is generated via trap-assisted photoexcitation. • Abnormal transconductance hump is induced by the leakage current from back channel. • Charge trapping in the passivation layer is likely due to the fact that a constant voltage has been applied to the top gate

On the theory of non-self-maintained low voltage arc discharge

International Nuclear Information System (INIS)

Shcherbinin, P.P.; Cherednichenko, Yu.G.

1980-01-01

In the approximation of constant temperature of plasma electrons for two emitter temperatures 1440 and 1830 K calculated are the volt-ampere characteristics and components of the voltage internal drop in a thermionic converter in the cases of self-maintained discharge in cesium and with an external source of atom ionization and electron heating. It is obtained, that using an external ionization source the decrease of voltage drop in the interelectrode gap with account of ionization energy constitutes about 0.1 V. Electron heating is not effective. For further reduction of voltage losses it is necessary to search for ways for decreasing electron Coulomb scattering on ions

Origin of the transition voltage in gold–vacuum–gold atomic junctions

International Nuclear Information System (INIS)

Wu Kunlin; Bai Meilin; Hou Shimin; Sanvito, Stefano

2013-01-01

The origin and the distance dependence of the transition voltage of gold–vacuum–gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold–vacuum–gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold–vacuum–gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments. (paper)

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

Science.gov (United States)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

Synthesis of sheath voltage drops in asymmetric radio-frequency discharges

International Nuclear Information System (INIS)

Yonemura, Shigeru; Nanbu, Kenichi; Iwata, Naoaki

2004-01-01

A sheath voltage drop in asymmetric discharges is one of the most important parameters of radio-frequency capacitively coupled plasmas because it determines the kinetic energy of the ions incident on the target or substrate. In this study, we developed a numerical simulation code to estimate the sheath voltage drops and, consequently, the self-bias voltage. We roughly approximated general asymmetric rf discharges to one-dimensional spherical ones. The results obtained by using our simulation code are consistent with measurements and Lieberman's theory

Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

International Nuclear Information System (INIS)

Kim, N.; Cheong, Y.; Song, W.

2010-01-01

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress

International Nuclear Information System (INIS)

Hsieh, Tien-Yu; Chang, Ting-Chang; Chen, Te-Chih; Tsai, Ming-Yen; Chen, Yu-Te

2013-01-01

This paper investigates the degradation mechanism of amorphous InGaZnO thin-film transistors under DC and AC gate bias stress. Comparing the degradation behavior at equal accumulated effective stress time, more pronounced threshold voltage shift under AC positive gate bias stress in comparison with DC stress indicates extra electron-trapping phenomenon that occurs in the duration of rising/falling time in pulse. Contrarily, illuminated AC negative gate bias stress exhibits much less threshold voltage shift than DC stress, suggesting that the photo-generated hole does not have sufficient time to drift to the interface of IGZO/gate insulator and causes hole-trapping under AC operation. Since the evolution of threshold voltage fits the stretched-exponential equation well, the different degradation tendencies under DC/AC stress can be attributed to the different electron- and hole-trapping efficiencies, and this is further verified by varying pulse waveform. - Highlights: ► Static and dynamic gate bias stresses are imposed on InGaZnO TFTs. ► Dynamic positive gate bias induces more pronounced threshold voltage shift. ► Static negative-bias illumination stress induces more severe threshold voltage shift. ► Evolution of threshold voltage fits the stretched-exponential equation well

Voltage Recovery of Grid-Connected Wind Turbines with DFIG After a Short-Circuit Fault

DEFF Research Database (Denmark)

Sun, Tao; Chen, Zhe; Blaabjerg, Frede

2004-01-01

The fast development of wind power generation brings new requirements for wind turbine integration to the network. After clearance of an external short-circuit fault, the voltage at the wind turbine terminal should be re-established with minimized power losses. This paper concentrates on voltage......-establish the wind turbine terminal voltage after the clearance of an external short-circuit fault, and the restore the normal operation of the variable speed wind turbine with DFIG, which has been demonstrated by simulation results....

Theoretical study of the electromechanical efficiency of a loaded tubular dielectric elastomer actuator

DEFF Research Database (Denmark)

Rechenbach, Björn; Willatzen, Morten; Lassen, Benny

2016-01-01

The electromechanical efficiency of a loaded tubular dielectric elastomer actuator (DEA) is investigated theoretically. In previous studies, the external system, on which the DEA performs mechanical work, is implemented implicitly by prescribing the stroke of the DEA in a closed operation cycle....... Here, a more generic approach, modelling the external system by a frequency-dependent mechanical impedance which exerts a certain force on the DEA depending on its deformation, is chosen. It admits studying the dependence of the electromechanical efficiency of the DEA on the external system. A closed...... operation cycle is realized by exciting the DEA electrically by a sinusoidal voltage around a bias voltage. A detailed parametric study shows that the electromechanical efficiency is highly dependent on the frequency, amplitude, and bias of the excitation voltage and the mechanical impedance of the external...

Practical investigation of the gate bias effect on the reverse recovery behavior of the body diode in power MOSFETs

DEFF Research Database (Denmark)

Lindberg-Poulsen, Kristian; Petersen, Lars Press; Ouyang, Ziwei

2014-01-01

This work considers an alternative method of reducing the body diode reverse recovery by taking advantage of the MOSFET body effect, and applying a bias voltage to the gate before reverse recovery. A test method is presented, allowing the accurate measurement of voltage and current waveforms during...... reverse recovery at high di=dt. Different bias voltages and dead times are combined, giving a loss map which makes it possible to evaluate the practical efficacy of gate bias on reducing the MOSFET body diode reverse recovery, while comparing it to the well known methods of dead time optimization...

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

Science.gov (United States)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Influence of 60Co γ-ray irradiation and applied bias voltages on dielectric properties of Al/SiO2/p-Si (MIS) structures

International Nuclear Information System (INIS)

Tascioglu, I.; Uslu, H.; Aydemir, U.

2010-01-01

The MIS structures were exposed to 6 0Co γ-ray source at 5 kGy and radiation effect on dielectric properties has been investigated using admittance method (C-V and G/ω-V) by applying a small ac signal of 40 mV amplitude at 1 MHz and room temperature. The voltage dependent dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), electric modulus(M*) and ac electrical conductivity (σ a c) profiles show an intersection behavior about 1.6 V. The ε', ε'', tanδ and σ a c values decrease with increasing dose before intersection point after than they become increase. Such behavior can be explained on the basis of Maxwell-Wagner interfacial polarization and restructuring and reordering of interface states charges due to the effect of γ-ray irradiation. Also, the imaginer part of M* exhibits a peak. It is concluded that all these parameters of MIS structure are strongly dependent on the radiation dose and applied bias voltage especially in depletion region.

Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2 2.5 nm) after constant voltage stresses

Science.gov (United States)

Petit, C.; Zander, D.

2007-10-01

It has been shown that the low voltage gate current in ultrathin oxide metal-oxide-semiconductor devices is very sensitive to electrical stresses. Therefore, it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used. In this work, we present a study on n-MOSCAP devices at negative gate bias in the direct tunneling (DT) regime. If the low voltage stress-induced leakage current (LVSILC) depends strongly on the low sense voltages, it also depends strongly on the stress voltage magnitude. We show that two LVSILC peaks appear as a function of the sense voltage in the LVSILC region and that their magnitude, one compared to the other, depends strongly on the stress voltage magnitude. One is larger than the other at low stress voltage and smaller at high stress voltage. From our experimental results, different conduction mechanisms are analyzed. To explain LVSILC variations, we propose a model of the conduction through the ultrathin gate oxide based on two distinctly different trap-assisted tunneling mechanisms: inelastic of gate electron (INE) and trap-assisted electron (ETAT).

Comparative Study of Voltage Recovery Behaviors of Grid-Connected Wind Turbines

DEFF Research Database (Denmark)

Sun, Tao; Chen, Zhe; Blaabjerg, Frede

2004-01-01

on voltage recovery of variable speed wind turbines. The models of two different kinds of variable speed wind turbines, respectively with slip control and with doubly fed induction generator (DFIG), are developed in PSCAD/EMTDC. In both wind power generation systems, control strategies are proposed to re......The fast development of wind power generation brings new requirements for wind turbine integration to the network. After the clearance of an external short-circuit fault, the voltage at the wind turbine terminal should be re-established with minimized power losses. This paper concentrates......-establish the wind turbine terminal voltage after the clearance of an external short-circuit fault, which have been demonstrated by simulation results....

Adaptive Sliding Mode Control of MEMS AC Voltage Reference Source

Directory of Open Access Journals (Sweden)

Ehsan Ranjbar

2017-01-01

Full Text Available The accuracy of physical parameters of a tunable MEMS capacitor, as the major part of MEMS AC voltage reference, is of great importance to achieve an accurate output voltage free of the malfunctioning noise and disturbance. Even though strenuous endeavors are made to fabricate MEMS tunable capacitors with desiderated accurate physical characteristics and ameliorate exactness of physical parameters’ values, parametric uncertainties ineluctably emerge in fabrication process attributable to imperfections in micromachining process. First off, this paper considers applying an adaptive sliding mode controller design in the MEMS AC voltage reference source so that it is capable of giving off a well-regulated output voltage in defiance of jumbling parametric uncertainties in the plant dynamics and also aggravating external disturbance imposed on the system. Secondly, it puts an investigatory comparison with the designed model reference adaptive controller and the pole-placement state feedback one into one’s prospective. Not only does the tuned adaptive sliding mode controller show remarkable robustness against slow parameter variation and external disturbance being compared to the pole-placement state feedback one, but also it immensely gets robust against the external disturbance in comparison with the conventional adaptive controller. The simulation results are promising.

Origin of the transition voltage in gold–vacuum–gold atomic junctions

KAUST Repository

Wu, Kunlin

2012-12-13

The origin and the distance dependence of the transition voltage of gold-vacuum-gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold-vacuum-gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold-vacuum-gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments. © 2013 IOP Publishing Ltd.

Thermally-induced voltage alteration for integrated circuit analysis

Energy Technology Data Exchange (ETDEWEB)

Cole, E.I. Jr.

2000-06-20

A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

The impact of the biasing radial electric field on the SOL in a divertor tokamak

International Nuclear Information System (INIS)

Rozhansky, V.; Tendler, M.

1993-01-01

Strong radial electric field can be induced within the SOL in a divertor tokamak by applying a voltage to divertor plates with respect to the first wall. This biasing scheme results in the strong radial electric field which is much larger than the natural electric field, usually of the order T e /e. Experiments employing this biasing scheme were carried out on the tokamak TdeV. Many interesting effects such as - modifications of the density profile and radial transport of impurities as a function of the polarity and the magnitude of the biasing voltage, the generation of the flux surface average toroidal rotation proportional to the applied voltage, redistribution of the plasma outflow onto divertor plates and so on - were demonstrated to result from the biasing. Furthermore, in contrast to studies carried out employing a different biasing scheme which primarily results in a poloidal electric field, the strong radial electric field impacts more significantly within SOL than the poloidal electric field. Here, we aim to show that the main effects observed experimentally follow from the analysis, provided continuity and momentum balances are employed invoking anomalous viscosity and inertia. (author) 4 refs

Analytical solution of the PNP equations at AC applied voltage

International Nuclear Information System (INIS)

Golovnev, Anatoly; Trimper, Steffen

2012-01-01

A symmetric binary polymer electrolyte subjected to an AC voltage is considered. The analytical solution of the Poisson–Nernst–Planck equations (PNP) is found and analyzed for small applied voltages. Three distinct time regimes offering different behavior can be discriminated. The experimentally realized stationary behavior is discussed in detail. An expression for the external current is derived. Based on the theoretical result a simple method is suggested of measuring the ion mobility and their concentration separately. -- Highlights: ► Analytical solution of Poisson–Nernst–Planck equations. ► Binary polymer electrolyte subjected to an external AC voltage. ► Three well separated time scales exhibiting different behavior. ► The experimentally realized stationary behavior is discussed in detail. ► A method is proposed measuring the mobility and the concentration separately.

TCABR Tokamak scrape-off layer turbulence with DC biasing

International Nuclear Information System (INIS)

Heller, M.V.A.P.; Ferreira, A.A.; Caldas, I.L.; Nascimento, I.C.

2004-01-01

Turbulence and particle transport in plasma scrape-off layer have been controlled by external electric fields. This control can be achieved by a biasing electrode located inside the plasma. We investigate plasma turbulence changes in the scrape-off layer of TCABR tokamak introduced by DC biasing an electrode inside the plasma. Our investigation is based on the alterations observed on the wavelet power spectra and on the intermittent burst sequences of plasma potential and density fluctuations measured by a set of Langmuir probes. Biasing the electrode changes the turbulence statistics and the bursts intermittence. With the imposed external electric field, fluctuation amplitudes, phase velocities, and anomalous particle transport are modified. Transport reduction for higher frequencies induced by the biasing could be due to the strong de-phasing between density and potential fluctuations. The mode coupling increases with the perturbation for the high frequency broadband fluctuations. The total (laminar and bursting) radial particle transport is reduced by about 25% by DC biasing. Bursts contribution to total transport is 15% and for the studied conditions this contribution does not change much with the bias perturbation

Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

Science.gov (United States)

Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

2018-05-01

The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

The high voltage system for the novel MPGD-based photon detectors of COMPASS RICH-1

CERN Document Server

Dalla Torre, S.; Birsa, R.; Bradamante, F.; Bressan, A.; Chatterjee, C.; Ciliberti, P.; Dasgupta, S.; Gobbo, B.; Gregori, M.; Hamar, G.; Levorato, S.; Martin, A.; Menon, G.; Tessarotto, F.; Zhao, Y.

2018-01-01

The architecture of the novel MPGD-based photon detectors of COMPASS RICH-1 consists in a large-size hybrid MPGD multilayer layout combining two layers of Thick-GEMs and a bulk resistive MICROMEGAS. Concerning biasing voltage, the Thick-GEMs are segmented in order to reduce the energy released in case of occasional discharges, while the MICROMEGAS anode is segmented in pads individually biased at positive voltage, while the micromesh is grounded. In total, there are ten different electrode types and more than 20000 electrodes supplied by more than 100 HV channels. Commercial power supply units are used. The original elements of the power supply system are the architecture of the voltage distribution net, the compensation, by voltage adjustment, of the effects of pressure and temperature variation affecting the detector gain and a sophisticated control software, which allows to protect the detectors against errors by the operator, to monitor and log voltages and current at 1 Hz rate and to automatically react ...

Characteristics of voltage regulators with serial NPN transistor in the fields of medium and high energy photons

International Nuclear Information System (INIS)

Vukic, V.; Osmokrovic, P.

2007-01-01

Variation of collector - emitter dropout voltage on serial transistors of voltage regulators LM2990T-5 and LT1086CT5 were used as the parameter for detection of examined devices' radiation hardness in X and ? radiation fields. Biased voltage regulators with serial super-β transistor in the medium dose rate X radiation field had significantly different response from devices with conventional serial NPN transistor. Although unbiased components suffered greater damage in most cases, complete device failure happened only among the biased components with serial super-β transistor in Bremsstrahlung field. Mechanisms of transistors degradation in ionizing radiation fields were analysed [sr

Relationship between the DC Bias and Debye Length in a Complex Plasma

OpenAIRE

Kong, Jie; Reyes, Jorge C.; Creel, James; Hyde, Truell

2007-01-01

The levitation height of a dust particle layer within a RF discharge plasma sheath is known to be related to the DC bias, the background pressure, and the Debye length. In this paper, a new experimental technique for measurement of the Debye length is introduced. This technique is based on the relationship between an externally applied DC bias and the particle levitation height and shows that under appropriate conditions, the addition of an externally applied DC bias provides a mechanism for ...

Dual-electrode biasing experiments in KT-5C device

International Nuclear Information System (INIS)

Yu Yi; Lu Ronghua; Wang Chen; Pan Geshen; Wen Yizhi; Yu Changxuan; Ma Jinxiu; Wan Shude; Liu Wandong

2005-01-01

Based on the single biasing electrode experiments to optimize the confinement of plasma in the device of KT-5C tokamak, dual-biasing electrodes were inserted into the KT5C plasma for the first time to explore the enhancement of the effects of biasing and the mechanisms of the biasing. By means of applying different combinations of biasing voltages to the dual electrodes, the changes in E r , which is the key factor for boosting up the Er x B flow shear, were observed. The time evolution showed the inner electrode played a major role in dual-biasing, for it always drew a larger current than the outer one. The outer electrode made little influence. It turned out that the dual-biasing electrodes were as effective as a single one, in improving plasma confinement, for the mechanism of biasing was essentially an edge effect. (author)

One-dimensional modulation instability in biased two-photon photorefractive-photovoltaic crystals

International Nuclear Information System (INIS)

Zhan Kaiyun; Hou Chunfeng; Li Xin

2010-01-01

The one-dimensional modulation instability of broad optical beams in biased two-photon photorefractive-photovoltaic crystals is investigated under steady-state conditions. Our analysis indicates that the modulation instability growth rate depends on the external bias field, the bulk photovoltaic effect and the ratio of the intensity of the incident beam to that of the dark irradiance. Moreover, our results show that this modulation instability growth rate is the same as that in two-photon photorefractive-photovoltaic crystals under open circuit conditions in the absence of an external bias field, and the modulation instability growth rate in two-photon biased photorefractive-nonphotovoltaic crystals can be predicted when the bulk photovoltaic effect is neglected.

Effect of applied bias voltage on corrosion-resistance for TiC1-xNx and Ti1-xNbxC1-yNy coatings

International Nuclear Information System (INIS)

Caicedo, J.C.; Amaya, C.; Yate, L.; Aperador, W.; Zambrano, G.; Gomez, M.E.; Alvarado-Rivera, J.; Munoz-Saldana, J.; Prieto, P.

2010-01-01

Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and 'impurities' of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

Exciplex-triplet energy transfer: A new method to achieve extremely efficient organic light-emitting diode with external quantum efficiency over 30% and drive voltage below 3 V

Science.gov (United States)

Seo, Satoshi; Shitagaki, Satoko; Ohsawa, Nobuharu; Inoue, Hideko; Suzuki, Kunihiko; Nowatari, Hiromi; Yamazaki, Shunpei

2014-04-01

A novel approach to enhance the power efficiency of an organic light-emitting diode (OLED) by employing energy transfer from an exciplex to a phosphorescent emitter is reported. It was found that excitation energy of an exciplex formed between an electron-transporting material with a π-deficient quinoxaline moiety and a hole-transporting material with aromatic amine structure can be effectively transferred to a phosphorescent iridium complex in an emission layer of a phosphorescent OLED. Moreover, such an exciplex formation increases quantum efficiency and reduces drive voltage. A highly efficient, low-voltage, and long-life OLED based on this energy transfer is also demonstrated. This OLED device exhibited extremely high external quantum efficiency of 31% even without any attempt to enhance light outcoupling and also achieved a low drive voltage of 2.8 V and a long lifetime of approximately 1,000,000 h at a luminance of 1,000 cd/m2.

Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

Science.gov (United States)

Mamedov, R. K.; Aslanova, A. R.

2018-06-01

The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2016-01-01

: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

Current-voltage-temperature characteristics of DNA origami

Energy Technology Data Exchange (ETDEWEB)

Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

2009-04-29

The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

Current-voltage-temperature characteristics of DNA origami

International Nuclear Information System (INIS)

Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M; Zhong Hong; Norton, Michael L; Sinitskii, Alexander

2009-01-01

The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of ∼0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

Directory of Open Access Journals (Sweden)

Chih-Lung Shen

2013-01-01

Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

Universal Majorana thermoelectric noise

Science.gov (United States)

Smirnov, Sergey

2018-04-01

Thermoelectric phenomena resulting from an interplay between particle flows induced by electric fields and temperature inhomogeneities are extremely insightful as a tool providing substantial knowledge about the microscopic structure of a given system. By tuning, e.g., parameters of a nanoscopic system coupled via tunneling mechanisms to two contacts, one may achieve various situations where the electric current induced by an external bias voltage competes with the electric current excited by the temperature difference of the two contacts. Even more exciting physics emerges when the system's electronic degrees freedom split to form Majorana fermions which make the thermoelectric dynamics universal. Here, we propose revealing these unique universal signatures of Majorana fermions in strongly nonequilibrium quantum dots via noise of the thermoelectric transport beyond linear response. It is demonstrated that whereas mean thermoelectric quantities are only universal at large-bias voltages, the noise of the electric current excited by an external bias voltage and the temperature difference of the contacts is universal at any bias voltage. We provide truly universal, i.e., independent of the system's parameters, thermoelectric ratios between nonlinear response coefficients of the noise and mean current at large-bias voltages where experiments may easily be performed to uniquely detect these truly universal Majorana thermoelectric signatures.

Liquid–Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing

KAUST Repository

Zhang, Yu

2017-10-17

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid–liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the “sensing channel” can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

Science.gov (United States)

Zhang, Yu; Li, Jun; Li, Rui; Sbircea, Dan-Tiberiu; Giovannitti, Alexander; Xu, Junling; Xu, Huihua; Zhou, Guodong; Bian, Liming; McCulloch, Iain; Zhao, Ni

2017-11-08

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

Science.gov (United States)

Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

2012-03-01

High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

Directory of Open Access Journals (Sweden)

S. Demirezen

Full Text Available In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of ε′, ε′, tanδ, electric modulus (M′ and M″ and σac of PrBaCoO nanofiber capacitor have been investigated by using impedance spectroscopy method. The obtained experimental results show that the values of ε′, ε′, tanδ, M′, M″ and σac of the PrBaCoO nanofiber capacitor are strongly dependent on frequency of applied bias voltage. The values of ε′, ε″ and tanδ show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of σac and the electric modulus increase with increasing frequency. The high dispersion in ε′ and ε″ values at low frequencies may be attributed to the Maxwell–Wagner and space charge polarization. The high values of ε′ may be due to the interfacial effects within the material, PrBaCoO nanofibers interfacial layer and electron effect. The values of M′ and M″ reach a maximum constant value corresponding to M∞ ≈ 1/ε∞ due to the relaxation process at high frequencies, but both the values of M′ and M″ approach almost to zero at low frequencies. The changes in the dielectric and electrical properties with frequency can be also attributed to the existence of Nss and Rs of the capacitors. As a result, the change in the ε′, ε″, tanδ, M′, M″ and ac electric conductivity (σac is a result of restructuring and reordering of charges at the PrBaCoO/n-Si interface under an external electric field or voltage and interface polarization. Keywords: Thin films, Electrical properties, Interface/interphase

Attributional biases about the origins of attitudes: externality, emotionality, and rationality.

Science.gov (United States)

Kenworthy, Jared B; Miller, Norman

2002-05-01

Pilot work and 3 studies investigated the ways people explain the origins of attitudes. Study I examined the use of 3 dimensions (externality, rationality, emotionality) to explain the origin of people's own, in-group, and out-group attitudes. Attributions for own attitudes were the least externally and emotionally based and the most rationally based. By comparison with the out-group, less externality, less emotionality, and more rationality also were attributed to in-group attitudes. Studies 2 and 3 examined the effects of intergroup threat on attributions for in- and out-group attitude positions. Under high threat, more externality and emotionality but less rationality were attributed to out-group attitudes than under low threat. Intergroup differentiation mediated the difference between out-group attributions under high and low threat.

Direct detection of the parametrically generated half-harmonic voltage in a Josephson tunnel junction

DEFF Research Database (Denmark)

Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

1976-01-01

The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions...

Interpreting anomalies observed in oxide semiconductor TFTs under negative and positive bias stress

NARCIS (Netherlands)

Jin, J.W.; Nathan, A.; Barquinha, P.; Pereira, L.; Fortunato, E.; Martins, R.; Cobb, B.

2016-01-01

Oxide semiconductor thin-film transistors can show anomalous behavior under bias stress. Two types of anomalies are discussed in this paper. The first is the shift in threshold voltage (VTH) in a direction opposite to the applied bias stress, and highly dependent on gate dielectric material. We

Operator Bias in the Estimation of Arc Efficiency in Gas Tungsten Arc Welding

Directory of Open Access Journals (Sweden)

Fredrik Sikström

2015-03-01

Full Text Available In this paper the operator bias in the measurement process of arc efficiency in stationary direct current electrode negative gas tungsten arc welding is discussed. An experimental study involving 15 operators (enough to reach statistical significance has been carried out with the purpose to estimate the arc efficiency from a specific procedure for calorimetric experiments. The measurement procedure consists of three manual operations which introduces operator bias in the measurement process. An additional relevant experiment highlights the consequences of estimating the arc voltage by measuring the potential between the terminals of the welding power source instead of measuring the potential between the electrode contact tube and the workpiece. The result of the study is a statistical evaluation of the operator bias influence on the estimate, showing that operator bias is negligible in the estimate considered here. On the contrary the consequences of neglecting welding leads voltage drop results in a significant under estimation of the arc efficiency.

Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

Directory of Open Access Journals (Sweden)

P. Pipinys

2010-01-01

Full Text Available Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy are also explicable in the framework of the PhAT model.

Microwave integrated circuit for Josephson voltage standards

Science.gov (United States)

Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

1980-01-01

A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

Science.gov (United States)

Winands, G. J. J.; Liu, Z.; Pemen, A. J. M.; van Heesch, E. J. M.; Yan, K.; van Veldhuizen, E. M.

2006-07-01

In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh)-1. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh)-1, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.

Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

Energy Technology Data Exchange (ETDEWEB)

Winands, G J J [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Liu, Z [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Pemen, A J M [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Heesch, E J M van [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Yan, K [EPS Group, Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands); Veldhuizen, E M van [EPG Group, Department of Applied Physics, Eindhoven University of Technology, 5600 MB, Eindhoven (Netherlands)

2006-07-21

In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh){sup -1}. For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh){sup -1}, still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second.

Temporal development and chemical efficiency of positive streamers in a large scale wire-plate reactor as a function of voltage waveform parameters

International Nuclear Information System (INIS)

Winands, G J J; Liu, Z; Pemen, A J M; Heesch, E J M van; Yan, K; Veldhuizen, E M van

2006-01-01

In this paper a large-scale pulsed corona system is described in which pulse parameters such as pulse rise-time, peak voltage, pulse width and energy per pulse can be varied. The chemical efficiency of the system is determined by measuring ozone production. The temporal and spatial development of the discharge streamers is recorded using an ICCD camera with a shortest exposure time of 5 ns. The camera can be triggered at any moment starting from the time the voltage pulse arrives on the reactor, with an accuracy of less than 1 ns. Measurements were performed on an industrial size wire-plate reactor. The influence of pulse parameters like pulse voltage, DC bias voltage, rise-time and pulse repetition rate on plasma generation was monitored. It was observed that for higher peak voltages, an increase could be seen in the primary streamer velocity, the growth of the primary streamer diameter, the light intensity and the number of streamers per unit length of corona wire. No significant separate influence of DC bias voltage level was observed as long as the total reactor voltage (pulse + DC bias) remained constant and the DC bias voltage remained below the DC corona onset. For those situations in which the plasma appearance changed (e.g. different streamer velocity, diameter, intensity), a change in ozone production was also observed. The best chemical yields were obtained for low voltage (55 kV), low energetic pulses (0.4 J/pulse): 60 g (kWh) -1 . For high voltage (86 kV), high energetic pulses (2.3 J/pulse) the yield decreased to approximately 45 g (kWh) -1 , still a high value for ozone production in ambient air (RH 42%). The pulse repetition rate has no influence on plasma generation and on chemical efficiency up to 400 pulses per second

Active Power Filter DC Bus Voltage Piecewise Reaching Law Variable Structure Control

OpenAIRE

Liu, Baolian; Ding, Zujun; Zhao, Huanyu; Jin, Defei

2014-01-01

The DC bus voltage stability control is one key technology to ensure that Active Power Filter (APF) operates stably. The external disturbances such as power grid and load fluctuation and the system parameters changing may affect the stability of APF DC bus voltage and the normal operation of APF. The mathematical model of DC bus voltage is established according to power balance principle and a DC bus voltage piecewise reaching law variable structure control algorithm is proposed to solve the ...

Allosteric substrate switching in a voltage-sensing lipid phosphatase.

Science.gov (United States)

Grimm, Sasha S; Isacoff, Ehud Y

2016-04-01

Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We found that the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), has not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage-sensing domain (VSD). Using fast fluorescence resonance energy transfer (FRET) reporters of PIPs to monitor enzyme activity and voltage-clamp fluorometry to monitor conformational changes in the VSD, we found that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage-sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This two-step allosteric control over a dual-specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility, endocytosis and exocytosis.

Allosteric substrate switching in a voltage sensing lipid phosphatase

Science.gov (United States)

Grimm, Sasha S.; Isacoff, Ehud Y.

2016-01-01

Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We find the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), to have not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage sensing domain (VSD). Using fast FRET reporters of PIPs to monitor enzyme activity and voltage clamp fluorometry to monitor conformational changes in the VSD, we find that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This novel 2-step allosteric control over a dual specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility and endo/exocytosis. PMID:26878552

Analysis of bias effects on the total ionizing dose response in a 180 nm technology

International Nuclear Information System (INIS)

Liu Zhangli; Hu Zhiyuan; Zhang, Zhengxuan; Shao Hua; Chen Ming; Bi Dawei; Ning Bingxu; Zou Shichang

2011-01-01

The effects of gamma ray irradiation on the shallow trench isolation (STI) leakage current in a 180 nm technology are investigated. The radiation response is strongly influenced by the bias modes, gate bias during irradiation, substrate bias during irradiation and operating substrate bias after irradiation. We found that the worst case occurs under the ON bias condition for the ON, OFF and PASS bias mode. A positive gate bias during irradiation significantly enhances the STI leakage current, indicating the electric field influence on the charge buildup process during radiation. Also, a negative substrate bias during irradiation enhances the STI leakage current. However a negative operating substrate bias effectively suppresses the STI leakage current, and can be used to eliminate the leakage current produced by the charge trapped in the deep STI oxide. Appropriate substrate bias should be introduced to alleviate the total ionizing dose (TID) response, and lead to acceptable threshold voltage shift and subthreshold hump effect. Depending on the simulation results, we believe that the electric field distribution in the STI oxide is the key parameter influencing bias effects on the radiation response of transistor. - Highlights: → ON bias is the worst bias condition for the ON, PASS and OFF bias modes. → Larger gate bias during irradiation leads to more pronounced characteristic degradation. → TID induced STI leakage can be suppressed by negative operating substrate bias voltage. → Negative substrate bias during irradiation leads to larger increase of off-state leakage. → Electric field in the STI oxide greatly influences the device's radiation effect.

Voltage Quench Dynamics of a Kondo System.

Science.gov (United States)

Antipov, Andrey E; Dong, Qiaoyuan; Gull, Emanuel

2016-01-22

We examine the dynamics of a correlated quantum dot in the mixed valence regime. We perform numerically exact calculations of the current after a quantum quench from equilibrium by rapidly applying a bias voltage in a wide range of initial temperatures. The current exhibits short equilibration times and saturates upon the decrease of temperature at all times, indicating Kondo behavior both in the transient regime and in the steady state. The time-dependent current saturation temperature connects the equilibrium Kondo temperature to a substantially increased value at voltages outside of the linear response. These signatures are directly observable by experiments in the time domain.

Large time-dependent coercivity and resistivity modification under sustained voltage application in a Pt/Co/AlOx/Pt junction.

NARCIS (Netherlands)

Brink, van den A.; van der Heijden, M.A.J.; Swagten, H.J.M.; Koopmans, B.

2015-01-01

The coercivity and resistivity of a Pt/Co/AlOx/Pt junction are measured under sustained voltage application. High bias voltages of either polarity are determined to cause a strongly enhanced, reversible coercivity modification compared to low voltages. Time-resolved measurements show a logarithmic

Ultra-Low Voltage Class AB Switched Current Memory Cell

DEFF Research Database (Denmark)

Igor, Mucha

1996-01-01

This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

Flow reversal at low voltage and low frequency in a microfabricated ac electrokinetic pump

DEFF Research Database (Denmark)

Gregersen, Misha Marie; Olesen, Laurits Højgaard; Brask, Anders

2007-01-01

measured in a regime, where both the applied voltage and the frequency are low, Vrms1.5 V and f20 kHz, compared to previously investigated parameter ranges. The impedance spectrum has been thoroughly measured and analyzed in terms of an equivalent circuit diagram to rule out trivial circuit explanations......Microfluidic chips have been fabricated in Pyrex glass to study electrokinetic pumping generated by a low-voltage ac bias applied to an in-channel asymmetric metallic electrode array. A measurement procedure has been established and followed carefully resulting in a high degree of reproducibility...... of the measurements over several days. A large coverage fraction of the electrode array in the microfluidic channels has led to an increased sensitivity allowing for pumping measurements at low bias voltages. Depending on the ionic concentration a hitherto unobserved reversal of the pumping direction has been...

Device and methods for writing and erasing analog information in small memory units via voltage pulses

Science.gov (United States)

El Gabaly Marquez, Farid; Talin, Albert Alec

2018-04-17

Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

Performance of an X-ray single pixel TES microcalorimeter under DC and AC biasing

International Nuclear Information System (INIS)

Gottardi, L.; Kuur, J. van der; Korte, P. A. J. de; Den Hartog, R.; Dirks, B.; Popescu, M.; Hoevers, H. F. C.; Bruijn, M.; Borderias, M. Parra; Takei, Y.

2009-01-01

We are developing Frequency Domain Multiplexing (FDM) for the read-out of TES imaging microcalorimeter arrays for future X-ray missions like IXO. In the FDM configuration the TES is AC voltage biased at a well defined frequencies (between 0.3 to 10 MHz) and acts as an AM modulating element. In this paper we will present a full comparison of the performance of a TES microcalorimeter under DC bias and AC bias at a frequency of 370 kHz. In both cases we measured the current-to-voltage characteristics, the complex impedance, the noise, the X-ray responsivity, and energy resolution. The behaviour is very similar in both cases, but deviations in performances are observed for detector working points low in the superconducting transition (R/R N <0.5). The measured energy resolution at 5.89 keV is 2.7 eV for DC bias and 3.7 eV for AC bias, while the baseline resolution is 2.8 eV and 3.3 eV, respectively.

Silicon photomultiplier's gain stabilization by bias correction for compensation of the temperature fluctuations

International Nuclear Information System (INIS)

Dorosz, P.; Baszczyk, M.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

2013-01-01

Gain of the silicon photomultiplier is strongly dependent on the value of bias voltage and temperature. This paper proposes a method for gain stabilization just by compensation of temperature fluctuations by bias correction. It has been confirmed that this approach gives good results and the gain can be kept very stable

Enhanced Emission by Accumulated Charges at Organic/Metal Interfaces Generated during the Reverse Bias of Organic Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Soichiro Nozoe

2017-10-01

Full Text Available A high frequency rectangular alternating voltage was applied to organic light emitting diodes (OLEDs with the structure ITO/TPD/Alq3/Al and ITO/CoPc/Alq3/Al, where ITO is indium-tin-oxide, TPD is 4,4′-bis[N-phenyl-N-(m-tolylamino]biphenyl, CoPc is cobalt phthalocyanine, and Alq3 is Tris(8-quinolinolatoaluminum, and the effect on emission of the reverse bias was examined. The results reveal that the emission intensity under an alternating reverse-forward bias is greater than that under an alternating zero-forward bias. The difference in the emission intensity (∆I increased both for decreasing frequency and increasing voltage level of the reverse bias. In particular, the change in emission intensity was proportional to the voltage level of the reverse bias given the same frequency. To understand ΔI, this paper proposes a model in which an OLED works as a capacitor under reverse bias, where positive and negative charges accumulate on the metal/organic interfaces. In this model, the emission enhancement that occurs during the alternating reverse-forward bias is rationalized as a result of the charge accumulation at the organic/metal interfaces during the reverse bias, which possibly modulates the vacuum level shifts at the organic/metal interfaces to reduce both the hole injection barrier at the organic/ITO interface and the electron injection barrier at the organic/Al interface under forward bias.

System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

Science.gov (United States)

Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

1993-01-01

A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

Bias temperature instability in tunnel field-effect transistors

Science.gov (United States)

Mizubayashi, Wataru; Mori, Takahiro; Fukuda, Koichi; Ishikawa, Yuki; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Liu, Yongxun; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Matsukawa, Takashi; Masahara, Meishoku; Endo, Kazuhiko

2017-04-01

We systematically investigated the bias temperature instability (BTI) of tunnel field-effect transistors (TFETs). The positive BTI and negative BTI mechanisms in TFETs are the same as those in metal-oxide-semiconductor FETs (MOSFETs). In TFETs, although traps are generated in high-k gate dielectrics by the bias stress and/or the interface state is degraded at the interfacial layer/channel interface, the threshold voltage (V th) shift due to BTI degradation is caused by the traps and/or the degradation of the interface state locating the band-to-band tunneling (BTBT) region near the source/gate edge. The BTI lifetime in n- and p-type TFETs is improved by applying a drain bias corresponding to the operation conditions.

Active voltage contrast imaging of cross-sectional surface of multilayer ceramic capacitor using helium ion microscopy

Energy Technology Data Exchange (ETDEWEB)

Sakai, C., E-mail: SAKAI.Chikako@nims.go.jp; Ishida, N.; Masuda, H.; Nagano, S.; Kitahara, M.; Fujita, D. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Ogata, Y. [TAIYO YUDEN CO., LTD., Takasaki-shi, Gunma 370-3347 (Japan)

2016-08-01

We studied active voltage contrast (AVC) imaging using helium ion microscopy (HIM). We observed secondary electron (SE) images of the cross-sectional surface of multilayer ceramic capacitors (MLCCs) with and without a voltage applied to the internal electrodes. When no voltage was applied, we obtained an image reflecting the material contrast between the Ni internal electrode region and the BaTiO{sub 3} dielectric region of the cross-sectional surface of the MLCC. When a voltage was applied, the electrical potential difference between the grounded and the positively biased internal electrodes affected the contrast (voltage contrast). Moreover, attenuation of the SE intensity from the grounded to the positively biased internal electrodes was observed in the dielectric region. Kelvin probe force microscopy (KPFM) measurements of the contact potential difference (CPD) were performed on the same sample. By using the AVC image from the HIM observation and the CPD image from the KPFM measurement, we could quantitatively evaluate the electrical potential. We think that the results of this study will lead to an expansion in the number of applications of HIM.

Determination of Shift/Bias in Digital Aerial Triangulation of UAV Imagery Sequences

Science.gov (United States)

Wierzbicki, Damian

2017-12-01

Currently UAV Photogrammetry is characterized a largely automated and efficient data processing. Depicting from the low altitude more often gains on the meaning in the uses of applications as: cities mapping, corridor mapping, road and pipeline inspections or mapping of large areas e.g. forests. Additionally, high-resolution video image (HD and bigger) is more often use for depicting from the low altitude from one side it lets deliver a lot of details and characteristics of ground surfaces features, and from the other side is presenting new challenges in the data processing. Therefore, determination of elements of external orientation plays a substantial role the detail of Digital Terrain Models and artefact-free ortophoto generation. Parallel a research on the quality of acquired images from UAV and above the quality of products e.g. orthophotos are conducted. Despite so fast development UAV photogrammetry still exists the necessity of accomplishment Automatic Aerial Triangulation (AAT) on the basis of the observations GPS/INS and via ground control points. During low altitude photogrammetric flight, the approximate elements of external orientation registered by UAV are burdened with the influence of some shift/bias errors. In this article, methods of determination shift/bias error are presented. In the process of the digital aerial triangulation two solutions are applied. In the first method shift/bias error was determined together with the drift/bias error, elements of external orientation and coordinates of ground control points. In the second method shift/bias error was determined together with the elements of external orientation, coordinates of ground control points and drift/bias error equals 0. When two methods were compared the difference for shift/bias error is more than ±0.01 m for all terrain coordinates XYZ.

Attribution bias and social anxiety in schizophrenia

Directory of Open Access Journals (Sweden)

Amelie M. Achim

2016-06-01

Full Text Available Studies on attribution biases in schizophrenia have produced mixed results, whereas such biases have been more consistently reported in people with anxiety disorders. Anxiety comorbidities are frequent in schizophrenia, in particular social anxiety disorder, which could influence their patterns of attribution biases. The objective of the present study was thus to determine if individuals with schizophrenia and a comorbid social anxiety disorder (SZ+ show distinct attribution biases as compared with individuals with schizophrenia without social anxiety (SZ− and healthy controls. Attribution biases were assessed with the Internal, Personal, and Situational Attributions Questionnaire in 41 individual with schizophrenia and 41 healthy controls. Results revealed the lack of the normal externalizing bias in SZ+, whereas SZ− did not significantly differ from healthy controls on this dimension. The personalizing bias was not influenced by social anxiety but was in contrast linked with delusions, with a greater personalizing bias in individuals with current delusions. Future studies on attribution biases in schizophrenia should carefully document symptom presentation, including social anxiety.

High voltage power supplies for INDUS-2 RF system

International Nuclear Information System (INIS)

Badapanda, M.K.; Hannurkar, P.R.

2003-01-01

The RF system of Indus-2 employs klystron amplifiers operating at 505.812 MHz. A precession controlled high voltage DC supply of appropriate rating is needed for each klystron amplifier, as its bias supply. Since internal flashover and arcing are common with the operation of these klystrons and stored energies beyond particular limit inside its bias power supply is detrimental to this device, a properly designed crowbar is incorporated between each klystron and its power supply. This crowbar bypass these stored energies and helps protecting klystron under any of these unfavorable conditions. In either case, power supply sees a near short circuit across its load. So, its power circuit is designed to reduce the fault current level and its various components are also designed to withstand these fault currents, as and when it appears. Finally, operation of these high voltage power supplies (HVPS) generates lot of harmonics on the source side, which distort the input waveform substantially and reduces the input power factor also. Source multiplication between two power supplies are planned to improve upon above parameters and suitable detuned line filters are incorporated to keep the input voltage total harmonics distortion (THD) below 5 % and input power factor (IFF) near unity. (author)

Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

DEFF Research Database (Denmark)

Igor, Mucha

1997-01-01

The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...

Dielectric-spectroscopy approach to ferrofluid nanoparticle clustering induced by an external electric field.

Science.gov (United States)

Rajnak, Michal; Kurimsky, Juraj; Dolnik, Bystrik; Kopcansky, Peter; Tomasovicova, Natalia; Taculescu-Moaca, Elena Alina; Timko, Milan

2014-09-01

An experimental study of magnetic colloidal particles cluster formation induced by an external electric field in a ferrofluid based on transformer oil is presented. Using frequency domain isothermal dielectric spectroscopy, we study the influence of a test cell electrode separation distance on a low-frequency relaxation process. We consider the relaxation process to be associated with an electric double layer polarization taking place on the particle surface. It has been found that the relaxation maximum considerably shifts towards lower frequencies when conducting the measurements in the test cells with greater electrode separation distances. As the electric field intensity was always kept at a constant value, we propose that the particle cluster formation induced by the external ac electric field accounts for that phenomenon. The increase in the relaxation time is in accordance with the Schwarz theory of electric double layer polarization. In addition, we analyze the influence of a static electric field generated by dc bias voltage on a similar shift in the relaxation maximum position. The variation of the dc electric field for the hysteresis measurements purpose provides understanding of the development of the particle clusters and their decay. Following our results, we emphasize the utility of dielectric spectroscopy as a simple, complementary method for detection and study of clusters of colloidal particles induced by external electric field.

Resistance and resistance fluctuations in random resistor networks under biased percolation.

Science.gov (United States)

Pennetta, Cecilia; Reggiani, L; Trefán, Gy; Alfinito, E

2002-06-01

We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased processes consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady state of the RRN focusing on the properties of the non-Ohmic regime. In constant-voltage conditions, a scaling relation is found between /(0) and V/V(0), where is the average network resistance, (0) the linear regime resistance, and V0 the threshold value for the onset of nonlinearity. A similar relation is found in constant-current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the prebreakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.

Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)

2016-07-11

High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

Differential effects of approach bias and eating style on unhealthy food consumption in overweight and normal weight women.

Science.gov (United States)

Kakoschke, Naomi; Kemps, Eva; Tiggemann, Marika

2017-11-01

The current study aimed to examine the effects of approach bias for unhealthy food and trait eating style on consumption of unhealthy food in overweight and normal weight individuals. Participants were 245 undergraduate women aged 17 - 26 years. They completed an Approach-Avoidance Task, the Dutch Eating Behaviour Questionnaire (to assess restrained, emotional, and external eating), and a taste test to measure consumption of unhealthy food. An external eating style predicted increased consumption of unhealthy food. Among overweight participants, external and emotional eating style individually moderated the relationship between approach bias for unhealthy food and subsequent consumption. Specifically, approach bias was positively related to consumption in high external and emotional eaters, but negatively related to consumption in low emotional eaters. These interactions were not observed among normal weight participants. Practically, the results suggest that overweight individuals who are external or emotional eaters may benefit from interventions that aim to modify approach bias towards unhealthy food cues to reduce problematic eating behaviour.

Current-voltage characteristic of a Josephson junction with randomly distributed Abrikosov vortices

International Nuclear Information System (INIS)

Fistul, M.V.; Giuliani, G.F.

1997-01-01

We have developed a theory of the current-voltage characteristic of a Josephson junction in the presence of randomly distributed, pinned misaligned Abrikosov vortices oriented perpendicularly to the junction plane. Under these conditions the Josephson phase difference var-phi acquires an interesting stochastic dependence on the position in the plane of the junction. In this situation it is possible to define an average critical current which is determined by the spatial correlations of this function. Due to the inhomogeneity, we find that for finite voltage bias the electromagnetic waves propagating in the junction display a broad spectrum of wavelengths. This is at variance with the situation encountered in homogeneous junctions. The amplitude of these modes is found to decrease as the bias is increased. We predict that the presence of these excitations is directly related to a remarkable feature in the current-voltage characteristic. The dependence of the position and the magnitude of this feature on the vortex concentration has been determined. copyright 1997 The American Physical Society

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-10-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

Directory of Open Access Journals (Sweden)

Sangeeta Singh

2016-03-01

Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

A novel on-chip high to low voltage power conversion circuit

International Nuclear Information System (INIS)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong; Lai Xinquan; Ye Qiang; Li Xianrui

2009-01-01

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm 2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

A novel on-chip high to low voltage power conversion circuit

Energy Technology Data Exchange (ETDEWEB)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong [Institute of Mechano-electronic Engineering, Xidian University, Xi' an 71007 (China); Lai Xinquan; Ye Qiang; Li Xianrui, E-mail: whui94@126.co [Institute of Electronic CAD, Xidian University, Xi' an 710071 (China)

2009-03-15

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 mum BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm{sup 2} area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

Slow voltage oscillations in Ag-doped superconducting Y-Ba-Cu-O

International Nuclear Information System (INIS)

Altinkok, A.; Yetis, H.; Kilic, K.; Kilic, A.; Olutas, M.

2008-01-01

The time effects in Ag-doped YBa 2 Cu 3 O 7-x sample (YBCO/Ag) were examined by means of transport relaxation measurements (V-t curves). At well-defined values of transport current (I), temperature (T) and external magnetic field (H), an abrupt rise in sample voltage was observed at the early stage of the relaxation process. After reducing the initial current to a finite value, the sample voltage levels off within a very short time. The rapid voltage drops seen in V-t curves were attributed to the rapid dynamic reorganization of flux lines traversing the sample edges. These observations were also interpreted as an indication of doping of YBCO with Ag and easy suppression of superconducting order parameter due to the presence of Ag. In addition, we investigated the influence of bidirectional square wave (BSW) current on the evolution of V-t curves at different temperatures and external magnetic fields. It was observed that a nonlinear response seen in V-t curves to BSW current with sufficiently short periods or sufficiently low amplitude reflects itself as regular sinusoidal- type voltage oscillations, which were discussed mainly in terms of the dynamic competition between pinning and depinning

Internal hiring or external recruitment?

OpenAIRE

DeVaro, Jed

2016-01-01

Hiring is one of a firm’s most important decisions. When an employer fills a vacancy with one of its own workers (through promotion or lateral transfer), it forgoes the opportunity to fill the position with a new hire from outside the firm. Although both internal and external hiring methods are used, firms frequently have a bias favoring insiders. Internal and external hires differ in observable characteristics (such as skill levels), as do the employers making each type of hiring decision. U...

Capacitance-voltage characteristics of GaAs ion-implanted structures

Directory of Open Access Journals (Sweden)

Privalov E. N.

2008-08-01

Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

Self-powered photogalvanic phosphorene photodetectors with high polarization sensitivity and suppressed dark current.

Science.gov (United States)

Li, Shuaishuai; Wang, Tao; Chen, Xiaoshuang; Lu, Wei; Xie, Yiqun; Hu, Yibin

2018-04-26

High polarization sensitivity, suppressed dark current and low energy consumption are all desirable device properties for photodetectors. In this work, we propose phosphorene-based photodetectors that are driven using photogalvanic effects (PGEs). The inversion symmetry of pristine phosphorene is broken using either application of an out-of-plane gate voltage or a heterostructure that is composed of the original phosphorene and blue phosphorene. The potential asymmetry enables PGEs under illumination by polarized light. Quantum transport calculations show that robust photocurrents are indeed generated by PGEs under a zero external bias voltage because of the broken inversion symmetry. These results indicate that the proposed photodetector is self-powered. In addition, the zero bias voltage eliminates the dark currents that are caused by application of an external bias voltage to traditional photodetectors. High polarization sensitivity to both linearly and circularly polarized light can also be realized, with extinction ratios ranging up to 102. The photoresponse of the proposed phosphorene/blue phosphorene heterostructure can be greatly enhanced by gating and is several orders of magnitude higher than that in gated phosphorene.

Effect of applied bias voltage on corrosion-resistance for TiC 1- xN x and Ti 1- xNb xC 1- yN y coatings

Science.gov (United States)

Caicedo, J. C.; Amaya, C.; Yate, L.; Aperador, W.; Zambrano, G.; Gómez, M. E.; Alvarado-Rivera, J.; Muñoz-Saldaña, J.; Prieto, P.

2010-02-01

Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and "impurities" of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

Listening to membrane potential: photoacoustic voltage-sensitive dye recording

Science.gov (United States)

Zhang, Haichong K.; Yan, Ping; Kang, Jeeun; Abou, Diane S.; Le, Hanh N. D.; Jha, Abhinav K.; Thorek, Daniel L. J.; Kang, Jin U.; Rahmim, Arman; Wong, Dean F.; Boctor, Emad M.; Loew, Leslie M.

2017-04-01

Voltage-sensitive dyes (VSDs) are designed to monitor membrane potential by detecting fluorescence changes in response to neuronal or muscle electrical activity. However, fluorescence imaging is limited by depth of penetration and high scattering losses, which leads to low sensitivity in vivo systems for external detection. By contrast, photoacoustic (PA) imaging, an emerging modality, is capable of deep tissue, noninvasive imaging by combining near-infrared light excitation and ultrasound detection. Here, we show that voltage-dependent quenching of dye fluorescence leads to a reciprocal enhancement of PA intensity. We synthesized a near-infrared photoacoustic VSD (PA-VSD), whose PA intensity change is sensitive to membrane potential. In the polarized state, this cyanine-based probe enhances PA intensity while decreasing fluorescence output in a lipid vesicle membrane model. A theoretical model accounts for how the experimental PA intensity change depends on fluorescence and absorbance properties of the dye. These results not only demonstrate PA voltage sensing but also emphasize the interplay of both fluorescence and absorbance properties in the design of optimized PA probes. Together, our results demonstrate PA sensing as a potential new modality for recording and external imaging of electrophysiological and neurochemical events in the brain.

Equilibrium fluctuation relations for voltage coupling in membrane proteins.

Science.gov (United States)

Kim, Ilsoo; Warshel, Arieh

2015-11-01

A general theoretical framework is developed to account for the effects of an external potential on the energetics of membrane proteins. The framework is based on the free energy relation between two (forward/backward) probability densities, which was recently generalized to non-equilibrium processes, culminating in the work-fluctuation theorem. Starting from the probability densities of the conformational states along the "voltage coupling" reaction coordinate, we investigate several interconnected free energy relations between these two conformational states, considering voltage activation of ion channels. The free energy difference between the two conformational states at zero (depolarization) membrane potential (i.e., known as the chemical component of free energy change in ion channels) is shown to be equivalent to the free energy difference between the two "equilibrium" (resting and activated) conformational states along the one-dimensional voltage couplin reaction coordinate. Furthermore, the requirement that the application of linear response approximation to the free energy functionals of voltage coupling should satisfy the general free energy relations, yields a novel closed-form expression for the gating charge in terms of other basic properties of ion channels. This connection is familiar in statistical mechanics, known as the equilibrium fluctuation-response relation. The theory is illustrated by considering the coupling of a unit charge to the external voltage in the two sites near the surface of membrane, representing the activated and resting states. This is done using a coarse-graining (CG) model of membrane proteins, which includes the membrane, the electrolytes and the electrodes. The CG model yields Marcus-type voltage dependent free energy parabolas for the response of the electrostatic environment (electrolytes etc.) to the transition from the initial to the final configuratinal states, leading to equilibrium free energy difference and free

Coincident ion acceleration and electron extraction for space propulsion using the self-bias formed on a set of RF biased grids bounding a plasma source

International Nuclear Information System (INIS)

Rafalskyi, D; Aanesland, A

2014-01-01

We propose an alternative method to accelerate ions in classical gridded ion thrusters and ion sources such that co-extracted electrons from the source may provide beam space charge neutralization. In this way there is no need for an additional electron neutralizer. The method consists of applying RF voltage to a two-grid acceleration system via a blocking capacitor. Due to the unequal effective area of the two grids in contact with the plasma, a dc self-bias is formed, rectifying the applied RF voltage. As a result, ions are continuously accelerated within the grid system while electrons are emitted in brief instants within the RF period when the RF space charge sheath collapses. This paper presents the first experimental results and a proof-of-principle. Experiments are carried out using the Neptune thruster prototype which is a gridded Inductively Coupled Plasma (ICP) source operated at 4 MHz, attached to a larger beam propagation chamber. The RF power supply is used both for the ICP discharge (plasma generation) and powering the acceleration grids via a capacitor for ion acceleration and electron extraction without any dc power supplies. The ion and electron energies, particle flux and densities are measured using retarding field energy analyzers (RFEA), Langmuir probes and a large beam target. The system operates in Argon and N 2 . The dc self-bias is found to be generated within the gridded extraction system in all the range of operating conditions. Broad quasi-neutral ion-electron beams are measured in the downstream chamber with energies up to 400 eV. The beams from the RF acceleration method are compared with classical dc acceleration with an additional external electron neutralizer. It is found that the two acceleration techniques provide similar performance, but the ion energy distribution function from RF acceleration is broader, while the floating potential of the beam is lower than for the dc accelerated beam. (paper)

Silicon photomultiplier's gain stabilization by bias correction for compensation of the temperature fluctuations

Energy Technology Data Exchange (ETDEWEB)

Dorosz, P., E-mail: pdorosz@agh.edu.pl [AGH University of Science and Technology, Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Electronics, 30-059 Krakow (Poland); Baszczyk, M.; Glab, S. [AGH University of Science and Technology, Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Electronics, 30-059 Krakow (Poland); Kucewicz, W., E-mail: kucewicz@agh.edu.pl [AGH University of Science and Technology, Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Electronics, 30-059 Krakow (Poland); Mik, L.; Sapor, M. [AGH University of Science and Technology, Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Electronics, 30-059 Krakow (Poland)

2013-08-01

Gain of the silicon photomultiplier is strongly dependent on the value of bias voltage and temperature. This paper proposes a method for gain stabilization just by compensation of temperature fluctuations by bias correction. It has been confirmed that this approach gives good results and the gain can be kept very stable.

A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

Directory of Open Access Journals (Sweden)

Bradley D. Christiansen

2012-01-01

Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

One-carrier free space charge motion under applied voltage

International Nuclear Information System (INIS)

Camargo, P.C.; Ferreira, G.F.L.

1976-01-01

The system of partial differential equations describing the one-carrier free space-charge motion under a given applied voltage is transformed into a system of two ordinary differential equations. The method is applied to find the external current injection [pt

Properties of TiO{sub 2} thin films deposited by rf reactive magnetron sputtering on biased substrates

Energy Technology Data Exchange (ETDEWEB)

Nezar, Sawsen, E-mail: snezar@cdta.dz [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Saoula, Nadia [Equipe Plasma & Applications, Division des Milieux Ionisés et Lasers, Centre de Développement des Technologies Avancées, Cité du 20 Aout 1956, Baba Hassen, Alger (Algeria); Sali, Samira [Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE Algiers) (Algeria); Faiz, Mohammed; Mekki, Mogtaba [Physics Department, King Fahd University of Petroleum and Minerals, Dhahran (Saudi Arabia); Laoufi, Nadia Aïcha [Laboratoire des phénomènes de transfert, génie chimique, Faculté de Génie des procèdes, USTHB, BP 32 El-alia, Bab Ezzouar, Alger (Algeria); Tabet, Nouar [Qatar Environment and Energy Research Institute, Hamad Bin Khalifa University (HBKU), Doha (Qatar)

2017-02-15

Highlights: • TiO{sub 2} thin films were deposited on negatively biased substrates by rf magnetron sputtering technique. • The bias favors the formation of TiO{sub 2} crystalline phase. • The roughness of the films increases and the grain size decreases as the bias voltage is varied between (0 and −100 V). • XPS reveals the presence of adsorbed humidity of the surface and Ti{sup 4+} oxidation state in the as prepared samples. - Abstract: TiO{sub 2} thin films are of paramount importance due to their pervasive applications. In contrast to previous published works where the substrate was heated at high temperatures to obtain TiO{sub 2} crystalline phase, we show in this study that it is possible to deposit crystalline TiO{sub 2} thin films on biased and unbiased substrate at room temperature using reactive rf magnetron sputtering. The bias voltage was varied from 0 V to −100 V. The deposited films were characterized using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV–vis spectroscopy, Raman spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and atomic force microscopy (AFM). The average crystallite size was estimated using x-ray diffraction. The results showed that the application of negative bias affects the surface roughness of the films and favors the formation of the rutile phase. The root mean square roughness (R{sub rms}), the average grain size and the optical band gap of the films decreased as the substrate bias voltage was varied from 0 to −100 V. The UV–visible transmittance spectra showed that the films were transparent in the visible range and absorb strongly in the UV range. This study shows that biasing the substrate could be a promising and effective alternative to deposit TiO{sub 2} crystallized thin films of engineered properties at room temperature.

Influence of an external voltage on the conductance through a quantum dot side-coupled to a short quantum wire

International Nuclear Information System (INIS)

Zhang Zhiyong; Xiong Shijie

2005-01-01

We investigate the influence of an external voltage V 0 on conductance G through a quantum dot (QD), which is side-coupled to a quantum wire of length L W , whose two ends are weakly connected to leads. In our calculation, the poor man's scaling law and slave-boson mean-field method are employed. With V 0 increased, a series of resonant regions is formed and G exhibits different properties in and out of these regions, which is the universal result of the finite-size effect on the Kondo correlation. In symmetric structures, the would-be resonant regions corresponding to odd wavefunctions are removed. If the symmetry is broken by changing the QD position, those regions will be recovered. In two asymmetric structures with their wire lengths being L W and L W +1, respectively, the two sets of resonant regions intersect with each other. These symmetry-related phenomena characterize side-coupled QD structures. With the barrier width increased, the number of resonant regions is increased, too

Contamination effects on fixed-bias Langmuir probes

Energy Technology Data Exchange (ETDEWEB)

Steigies, C. T. [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, 24098 Kiel (Germany); Barjatya, A. [Department of Physical Sciences, Embry-Riddle Aeronautical University, Daytona Beach, Florida 32114 (United States)

2012-11-15

Langmuir probes are standard instruments for plasma density measurements on many sounding rockets. These probes can be operated in swept-bias as well as in fixed-bias modes. In swept-bias Langmuir probes, contamination effects are frequently visible as a hysteresis between consecutive up and down voltage ramps. This hysteresis, if not corrected, leads to poorly determined plasma densities and temperatures. With a properly chosen sweep function, the contamination parameters can be determined from the measurements and correct plasma parameters can then be determined. In this paper, we study the contamination effects on fixed-bias Langmuir probes, where no hysteresis type effect is seen in the data. Even though the contamination is not evident from the measurements, it does affect the plasma density fluctuation spectrum as measured by the fixed-bias Langmuir probe. We model the contamination as a simple resistor-capacitor circuit between the probe surface and the plasma. We find that measurements of small scale plasma fluctuations (meter to sub-meter scale) along a rocket trajectory are not affected, but the measured amplitude of large scale plasma density variation (tens of meters or larger) is attenuated. From the model calculations, we determine amplitude and cross-over frequency of the contamination effect on fixed-bias probes for different contamination parameters. The model results also show that a fixed bias probe operating in the ion-saturation region is affected less by contamination as compared to a fixed bias probe operating in the electron saturation region.

Worst-Case Bias During Total Dose Irradiation of SOI Transistors

International Nuclear Information System (INIS)

Ferlet-Cavrois, V.; Colladant, T.; Paillet, P.; Leray, J.-L; Musseau, O.; Schwank, James R.; Shaneyfelt, Marty R.; Pelloie, J.L.; Du Port de Poncharra, J.

2000-01-01

The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL and from CEA/LETI) is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide

Classification based upon gene expression data: bias and precision of error rates.

Science.gov (United States)

Wood, Ian A; Visscher, Peter M; Mengersen, Kerrie L

2007-06-01

Gene expression data offer a large number of potentially useful predictors for the classification of tissue samples into classes, such as diseased and non-diseased. The predictive error rate of classifiers can be estimated using methods such as cross-validation. We have investigated issues of interpretation and potential bias in the reporting of error rate estimates. The issues considered here are optimization and selection biases, sampling effects, measures of misclassification rate, baseline error rates, two-level external cross-validation and a novel proposal for detection of bias using the permutation mean. Reporting an optimal estimated error rate incurs an optimization bias. Downward bias of 3-5% was found in an existing study of classification based on gene expression data and may be endemic in similar studies. Using a simulated non-informative dataset and two example datasets from existing studies, we show how bias can be detected through the use of label permutations and avoided using two-level external cross-validation. Some studies avoid optimization bias by using single-level cross-validation and a test set, but error rates can be more accurately estimated via two-level cross-validation. In addition to estimating the simple overall error rate, we recommend reporting class error rates plus where possible the conditional risk incorporating prior class probabilities and a misclassification cost matrix. We also describe baseline error rates derived from three trivial classifiers which ignore the predictors. R code which implements two-level external cross-validation with the PAMR package, experiment code, dataset details and additional figures are freely available for non-commercial use from http://www.maths.qut.edu.au/profiles/wood/permr.jsp

Monte Carlo simulations of microchannel plate detectors I: steady-state voltage bias results

Energy Technology Data Exchange (ETDEWEB)

Ming Wu, Craig Kruschwitz, Dane Morgan, Jiaming Morgan

2008-07-01

X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and timeresolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a microchannel plate under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured microchannel plate sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

Energy Technology Data Exchange (ETDEWEB)

Baszczyk, M., E-mail: baszczyk@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Dorosz, P.; Glab, S.; Kucewicz, W. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Mik, L. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); State Higher Vocational School, Tarnow (Poland); Sapor, M. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland)

2016-07-11

Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

Science.gov (United States)

Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

2016-07-01

Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

International Nuclear Information System (INIS)

Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

2016-01-01

Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

Some device implications of voltage controlled magnetic anisotropy in Co/Gd2O3 thin films through REDOX chemistry

Science.gov (United States)

Hao, Guanhua; Noviasky, Nicholas; Cao, Shi; Sabirianov, Ildar; Yin, Yuewei; Ilie, Carolina C.; Kirianov, Eugene; Sharma, Nishtha; Sokolov, Andrei; Marshall, Andrew; Xu, Xiaoshan; Dowben, Peter A.

2018-04-01

The effect of intermediate interfacial oxidation on the in-plane magnetization of multilayer stack Pt/Co/Gd2O3, on a p-type silicon substrate, has been investigated by magneto-optical Kerr effect (MOKE) measurements, the anomalous Hall effect, and magnetoresistance measurements. While voltage controlled perpendicular magnetic anisotropy of a metal/oxide heterostructure is known, this heterostructure displays an inverse relationship between voltage and coercivity. The anomalous Hall effect demonstrates a significant change in hysteresis, with the applied bias sign. There is a higher perpendicular magnetic anisotropy with positive bias exposure.

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

Science.gov (United States)

Tang, Lan-Feng; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Qian, Hui-Min; Zhou, Dong; Zhang, Rong; Zheng, You-Dou; Huang, Xiao-Ming

2015-08-01

The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed. Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China.

Spectroscopic and impedance studies of reverse biased degraded dye solar cells

CSIR Research Space (South Africa)

Le Roux, Lukas J

2011-03-01

Full Text Available The work that is presented here is focused on the results that were obtained during studies of the performance of Dye Solar Cells under certain reverse bias conditions. This reverse voltage could permanently modify or damage a cell...

Carrier accumulation and depletion in point-contact capacitance-voltage measurements

Science.gov (United States)

Naitou, Yuichi

2017-11-01

Scanning capacitance microscopy (SCM) is a variation of atomic force microscopy in which a conductive probe tip detects the bias modulated capacitance for the purpose of measuring the nanoscale semiconductor carrier concentration. SCM can be regarded as a point-contact capacitance-voltage system, and its capacitance-voltage properties are different from those of a conventional parallel-plate capacitor. In this study, the charge accumulation and depletion behavior of a semiconductor sample were closely investigated by SCM. By analyzing the tip-sample approach curve, the effective probe tip area and charge depletion depth could be quantitatively determined.

Slow voltage oscillations in Ag-doped superconducting Y-Ba-Cu-O

Energy Technology Data Exchange (ETDEWEB)

Altinkok, A. [Abant Izzet Baysal University, Department of Physics, Turgut Gulez Research Laboratory, 14280 Bolu (Turkey)], E-mail: altinkok_a@ibu.edu.tr; Yetis, H.; Kilic, K.; Kilic, A.; Olutas, M. [Abant Izzet Baysal University, Department of Physics, Turgut Gulez Research Laboratory, 14280 Bolu (Turkey)

2008-09-15

The time effects in Ag-doped YBa{sub 2}Cu{sub 3}O{sub 7-x} sample (YBCO/Ag) were examined by means of transport relaxation measurements (V-t curves). At well-defined values of transport current (I), temperature (T) and external magnetic field (H), an abrupt rise in sample voltage was observed at the early stage of the relaxation process. After reducing the initial current to a finite value, the sample voltage levels off within a very short time. The rapid voltage drops seen in V-t curves were attributed to the rapid dynamic reorganization of flux lines traversing the sample edges. These observations were also interpreted as an indication of doping of YBCO with Ag and easy suppression of superconducting order parameter due to the presence of Ag. In addition, we investigated the influence of bidirectional square wave (BSW) current on the evolution of V-t curves at different temperatures and external magnetic fields. It was observed that a nonlinear response seen in V-t curves to BSW current with sufficiently short periods or sufficiently low amplitude reflects itself as regular sinusoidal- type voltage oscillations, which were discussed mainly in terms of the dynamic competition between pinning and depinning.

Observations of sensor bias dependent cluster centroid shifts in a prototype sensor for the LHCb Vertex Locator detector

CERN Document Server

Papadelis, Aras

2006-01-01

We present results from a recent beam test of a prototype sensor for the LHCb Vertex Locator detector, read out with the Beetle 1.3 front-end chip. We have studied the effect of the sensor bias voltage on the reconstructed cluster positions in a sensor placed in a 120GeV pion beam at a 10° incidence angle. We find an unexplained sysematic shift in the reconstructed cluster centroid when increasing the bias voltage on an already overdepleted sensor. The shift is independent of strip pitch and sensor thickness.

The self-attribution bias and paranormal beliefs

NARCIS (Netherlands)

van Elk, M.

The present study investigated the relation between paranormal beliefs, illusory control and the self-attribution bias, i.e., the motivated tendency to attribute positive outcomes to oneself while negative outcomes are externalized. Visitors of a psychic fair played a card guessing game and

A low-voltage fully balanced CMFF transconductor with improved linearity

Science.gov (United States)

Calvo, B.; Celma, S.; Alegre, J. P.; Sanz, M. T.

2007-05-01

This paper presents a new low-voltage pseudo-differential continuous-time CMOS transconductor for wideband applications. The proposed cell is based on a feedforward cancellation of the input common-mode signal and keeps the input common mode voltage constant, while the transconductance is easily tunable through a continuous bias voltage. Linearity is preserved during the tuning process for a moderate range of transconductance values. Simulation results for a 0.35 μm CMOS design show a 1:2 G m tuning range with an almost constant bandwidth over 600 MHz. Total harmonic distortion figures are below -60 dB over the whole range at 10 MHz up to a 200 μA p-p differential output. The proposed cell consumes less than 1.2 mW from a single 2.0 V supply.

An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Shift Method Compared with the Forward Voltage Method

International Nuclear Information System (INIS)

He Su-Ming; Wang Jin-Bin; Luo Xiang-Dong; Zhang Bo; Fu Lei; Cheng Li-Wen; Lu Wei

2012-01-01

The junction temperature of red, green and blue high power light emitting diodes (LEDs) is measured by using the emission peak shift method and the forward voltage method. Both the emission peak shift and the forward voltage decrease show a linear relationship relative to junction temperature. The linear coefficients of the red, green and blue LEDs for the peak shift method and the forward voltage method range from 0.03 to 0.15 nm/°C and from 1.33 to 3.59 mV/°C, respectively. Compared with the forward voltage method, the peak shift method is almost independent of bias current and sample difference. The variation of the slopes is less than 2% for the peak shift method and larger than 30% for the forward voltage method, when the LEDs are driven by different bias currents. It is indicated that the peak shift method gives better stability than the forward voltage method under different LED working conditions

Body Bias usage in UTBB FDSOI designs: A parametric exploration approach

Science.gov (United States)

Puschini, Diego; Rodas, Jorge; Beigne, Edith; Altieri, Mauricio; Lesecq, Suzanne

2016-03-01

Some years ago, UTBB FDSOI has appeared in the horizon of low-power circuit designers. With the 14 nm and 10 nm nodes in the road-map, the industrialized 28 nm platform promises highly efficient designs with Ultra-Wide Voltage Range (UWVR) thanks to extended Body Bias properties. From the power management perspective, this new opportunity is considered as a new degree of freedom in addition to the classic Dynamic Voltage Scaling (DVS), increasing the complexity of the power optimization problem at design time. However, so far no formal or empiric tool allows to early evaluate the real need for a Dynamic Body Bias (DBB) mechanism on future designs. This paper presents a parametric exploration approach that analyzes the benefits of using Body Bias in 28 nm UTBB FDSOI circuits. The exploration is based on electrical simulations of a ring-oscillator structure. These experiences show that a Body Bias strategy is not always required but, they underline the large power reduction that can be achieved when mandatory. Results are summarized in order to help designers to analyze how to choose the best dynamic power management strategy for a given set of operating conditions in terms of temperature, circuit activity and process choice. This exploration contributes to the identification of conditions that make DBB more efficient than DVS, and vice versa, and when both methods are mandatory to optimize power consumption.

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Directory of Open Access Journals (Sweden)

Peter Hornak

2017-12-01

Full Text Available Tungsten carbide (WC/C layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT, indentation modulus (EIT and coefficient of friction (COF values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.

High voltage switch triggered by a laser-photocathode subsystem

Science.gov (United States)

Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

2013-01-08

A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

The Coefficient of the Voltage Induced Frequency Shift Measurement on a Quartz Tuning Fork

Directory of Open Access Journals (Sweden)

Yubin Hou

2014-11-01

Full Text Available We have measured the coefficient of the voltage induced frequency shift (VIFS of a 32.768 KHz quartz tuning fork. Three vibration modes were studied: one prong oscillating, two prongs oscillating in the same direction, and two prongs oscillating in opposite directions. They all showed a parabolic dependence of the eigen-frequency shift on the bias voltage applied across the fork, due to the voltage-induced internal stress, which varies as the fork oscillates. The average coefficient of the VIFS effect is as low as several hundred nano-Hz per millivolt, implying that fast-response voltage-controlled oscillators and phase-locked loops with nano-Hz resolution can be built.

Modifications of plasma edge electric field and confinement properties by limiter biasing on the KT-5C tokamak

International Nuclear Information System (INIS)

Hui Gao; Kan Zhai; Yizhi Wen; Shude Wan; Guiding Wang; Changxun Yu

1995-01-01

Experiments using a biased multiblock limiter in the KT-5C tokamak show that positive biasing is more effective than negative biasing in modifying the edge electric field, suppressing fluctuations and improving plasma confinement. The biasing effect varies with the limiter area, the toroidal magnetic field and the biasing voltage. By positive biasing, the edge profiles of the plasma potential, the electron temperature and the density become steeper, resulting in a reduced edge particle flux, an increased global particle confinement time and lower fluctuation levels of the edge plasma. (author)

Decomposition of methane to hydrogen using nanosecond pulsed plasma reactor with different active volumes, voltages and frequencies

International Nuclear Information System (INIS)

Khalifeh, Omid; Mosallanejad, Amin; Taghvaei, Hamed; Rahimpour, Mohammad Reza; Shariati, Alireza

2016-01-01

Highlights: • CH 4 conversion into H 2 is investigated in a nanosecond pulsed DBD reactor. • The absence of CO and CO 2 in the product gas is highly favorable. • Effects of external electrode length, applied voltage and frequency are examined. • The maximum efficiency of 7.23% is achieved at the electrode length of 15 cm. • The maximum CH 4 conversion of 87.2% is obtained at discharge power 268.92 W. - Abstract: In this paper, the methane conversion into hydrogen is investigated experimentally in a nanosecond pulsed DBD reactor. In order to achieve pure hydrogen production with minimum power consumption, effects of some operating parameters including external electrode length, applied voltage and pulse repetition frequency have been evaluated. Results show that although higher CH 4 conversion and H 2 concentration can be obtained at longer electrode lengths, higher applied voltages and pulse repetition frequencies, these parameters should be optimized for efficient hydrogen production. Actually, the maximum CH 4 conversion of 87.2% and maximum hydrogen percentage of 80% are obtained at the external electrode length, discharge power, voltage and frequency of 15 cm, 268.92 W, 12 kV and 10 kHz, respectively. However, the maximum efficiency of 7.23% is achieved at the external electrode length of 15 cm, applied voltage of 6 kV, pulse repetition frequency of 0.9 kHz and discharge power of 4 W. Furthermore, at this condition, due to low temperature of discharge zone very little amount of solid carbon was observed on the inner electrode surface of the reactor.

Recording membrane potential changes through photoacoustic voltage sensitive dye

DEFF Research Database (Denmark)

Zhang, Haichong K.; Kang, Jeeun; Yan, Ping

2017-01-01

Monitoring of the membrane potential is possible using voltage sensitive dyes (VSD), where fluorescence intensity changes in response to neuronal electrical activity. However, fluorescence imaging is limited by depth of penetration and high scattering losses, which leads to low sensitivity in vivo...... systems for external detection. In contrast, photoacoustic (PA) imaging, an emerging modality, is capable of deep tissue, noninvasive imaging by combining near infrared light excitation and ultrasound detection. In this work, we develop the theoretical concept whereby the voltage-dependent quenching...... the experimental PA intensity change depends on fluorescence and absorbance properties of the dye. These results not only demonstrate the voltage sensing capability of the dye, but also indicate the necessity of considering both fluorescence and absorbance spectral sensitivities in order to optimize...

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

Science.gov (United States)

Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

2017-07-01

Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

Biased and flow driven Brownian motion in periodic channels

Science.gov (United States)

Martens, S.; Straube, A.; Schmid, G.; Schimansky-Geier, L.; Hänggi, P.

2012-02-01

In this talk we will present an expansion of the common Fick-Jacobs approximation to hydrodynamically as well as by external forces driven Brownian transport in two-dimensional channels exhibiting smoothly varying periodic cross-section. We employ an asymptotic analysis to the components of the flow field and to stationary probability density for finding the particles within the channel in a geometric parameter. We demonstrate that the problem of biased Brownian dynamics in a confined 2D geometry can be replaced by Brownian motion in an effective periodic one-dimensional potential ψ(x) which takes the external bias, the change of the local channel width, and the flow velocity component in longitudinal direction into account. In addition, we study the influence of the external force magnitude, respectively, the pressure drop of the fluid on the particle transport quantities like the averaged velocity and the effective diffusion coefficient. The critical ratio between the external force and pressure drop where the average velocity equals zero is identified and the dependence of the latter on the channel geometry is derived. Analytic findings are confirmed by numerical simulations of the particle dynamics in a reflection symmetric sinusoidal channel.

Influence of pulsed substrate bias on the structure and properties of Ti-Al-N films deposited by cathodic vacuum arc

Energy Technology Data Exchange (ETDEWEB)

Zhang, G.P., E-mail: princeterry@163.com [Institute of Physics, Chinese Academy of Science, Beijing 100080 (China); Gao, G.J. [Changchun University of Science and Technology, College of Science, Changchun 130000 (China); Wang, X.Q.; Lv, G.H.; Zhou, L.; Chen, H.; Pang, H.; Yang, S.Z. [Institute of Physics, Chinese Academy of Science, Beijing 100080 (China)

2012-07-15

Ti-Al-N films were deposited by cathodic vacuum arc (CVA) technique in N{sub 2} atmosphere with different pulsed substrate bias. The influence of pulsed substrate bias (0 to -800 V) on the deposition rate, surface morphology, crystal structure, and mechanical properties of the Ti-Al-N films were systematically investigated. Increasing pulsed bias voltage resulted in the decrease of deposition rate but the increase of surface roughness. It was found that there was a strong correlation between the pulsed bias and film structure. All the films studied in this paper were composed of TiN, AlN, and Ti-Al-N ternary phases. The grains changed from equiaxial to columnar and exhibited preferred orientation when the pulsed bias increased. With the increase of pulsed bias voltage, the atomic ratio of Ti to Al element increased gradually, while the N to (Ti + Al) ratio decreased. The composite films present an enhanced nanohardness compared with binary TiN and ZrN films. The film deposited with pulsed bias of -200 V possessed the maximum scratch critical load and nanohardness. The minimum friction coefficient with pulsed bias of -300 V was obtained.

Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Xin, Qian; Yan, Linlong; Luo, Yi [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Physics, Shandong University, Jinan 250100 (China); School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

2015-03-16

In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

International Nuclear Information System (INIS)

Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

2015-01-01

In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate

Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

DEFF Research Database (Denmark)

Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

2014-01-01

-out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

Neural signal for counteracting pre-action bias in the centromedian thalamic nucleus

Directory of Open Access Journals (Sweden)

Takafumi eMinamimoto

2014-01-01

Full Text Available Most of our daily actions are selected and executed involuntarily under familiar situations by the guidance of internal drives, such as motivation. The behavioral tendency or biasing towards one over others reflects the action-selection process in advance of action execution (i.e., pre-action bias. Facing unexpected situations, however, pre-action bias should be withdrawn and replaced by an alternative that is suitable for the situation (i.e., counteracting bias. To understand the neural mechanism for the counteracting process, we studied the neural activity of the thalamic centromedian (CM nucleus in monkeys performing GO-NOGO task with asymmetrical or symmetrical reward conditions. The monkeys reacted to GO signal faster in large-reward condition, indicating behavioral bias toward large reward. In contrast, they responded slowly in small-reward condition, suggesting a conflict between internal drive and external demand. We found that neurons in the CM nucleus exhibited phasic burst discharges after GO and NOGO instructions especially when they were associated with small reward. The small-reward preference was positively correlated with the strength of behavioral bias toward large reward. The small-reward preference disappeared when only NOGO action was requested. The timing of activation predicted the timing of action opposed to bias. These results suggest that CM signals the discrepancy between internal pre-action bias and external demand, and mediates the counteracting process — resetting behavioral bias and leading to execution of opposing action.

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Liu, Kuan-Hsien; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan; Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No. 1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsinchu 30078, Taiwan (China)

2014-03-31

This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

Science.gov (United States)

Chen, Horng-Shyang; Liu, Zhan Hui; Shih, Pei-Ying; Su, Chia-Ying; Chen, Chih-Yen; Lin, Chun-Han; Yao, Yu-Feng; Kiang, Yean-Woei; Yang, C C

2014-04-07

A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

Design and Analysis of a Slope Voltage Control for a DFIG Wind Power Plant

DEFF Research Database (Denmark)

Martínez, J.; Kjær, P. C.; Rodriguez, Pedro

2012-01-01

This paper addresses a detailed design of a wind power plant and turbine slope voltage control in the presence of communication delays for a wide short-circuit ratio range operation. The implemented voltage control scheme is based upon the secondary voltage control concept, which offers fast...... of connection with the grid. The performance has been tested using PSCAD/EMTDC program. The plant layout used in the simulations is based on an installed wind power plant, composed of 23 doubly fed generator wind turbines. The resulting performance is evaluated using a compilation of grid code voltage control...... response to grid disturbances, despite the communication delays, i.e., this concept is based on a primary voltage control, located in the wind turbine, which follows an external voltage reference sent by a central controller, called secondary voltage control, which is controlling the voltage at the point...

Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors

Science.gov (United States)

Jeong, Chan-Yong; Kim, Hee-Joong; Hong, Sae-Young; Song, Sang-Hun; Kwon, Hyuck-In

2017-08-01

In this study, we show that the two-stage unified stretched-exponential model can more exactly describe the time-dependence of threshold voltage shift (ΔV TH) under long-term positive-bias-stresses compared to the traditional stretched-exponential model in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). ΔV TH is mainly dominated by electron trapping at short stress times, and the contribution of trap state generation becomes significant with an increase in the stress time. The two-stage unified stretched-exponential model can provide useful information not only for evaluating the long-term electrical stability and lifetime of the a-IGZO TFT but also for understanding the stress-induced degradation mechanism in a-IGZO TFTs.

Relaxation of Isolated Ventricular Cardiomyocytes by a Voltage-Dependent Process

Science.gov (United States)

Bridge, John H. B.; Spitzer, Kenneth W.; Ershler, Philip R.

1988-08-01

Cell contraction and relaxation were measured in single voltage-clamped guinea pig cardiomyocytes to investigate the contribution of sarcolemmal Na+-Ca2+ exchange to mechanical relaxation. Cells clamped from -80 to 0 millivolts displayed initial phasic and subsequent tonic contractions; caffeine reduced or abolished the phasic and enlarged the tonic contraction. The rate of relaxation from tonic contractions was steeply voltage-dependent and was significantly slowed in the absence of a sarcolemmal Na+ gradient. Tonic contractions elicited in the absence of a Na+ gradient promptly relaxed when external Na+ was applied, reflecting activation of Na+-Ca2+ exchange. It appears that a voltage-dependent Na+-Ca2+ exchange can rapidly mechanically relax mammalian heart muscle.

Integrated reconfigurable high-voltage transmitting circuit for CMUTs

DEFF Research Database (Denmark)

Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

2015-01-01

In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes with voltages up to 100 V, maximum pulse range of 50 V, frequencies up to 5 MHz and different driving slew rates. Measurements are performed on the circuit in order to assess its functionality and power consumption...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

The design and development of low- and high-voltage ASICs for space-borne CCD cameras

Science.gov (United States)

Waltham, N.; Morrissey, Q.; Clapp, M.; Bell, S.; Jones, L.; Torbet, M.

2017-12-01

The CCD remains the pre-eminent visible and UV wavelength image sensor in space science, Earth and planetary remote sensing. However, the design of space-qualified CCD readout electronics is a significant challenge with requirements for low-volume, low-mass, low-power, high-reliability and tolerance to space radiation. Space-qualified components are frequently unavailable and up-screened commercial components seldom meet project or international space agency requirements. In this paper, we describe an alternative approach of designing and space-qualifying a series of low- and high-voltage mixed-signal application-specific integrated circuits (ASICs), the ongoing development of two low-voltage ASICs with successful flight heritage, and two new high-voltage designs. A challenging sub-system of any CCD camera is the video processing and digitisation electronics. We describe recent developments to improve performance and tolerance to radiation-induced single event latchup of a CCD video processing ASIC originally developed for NASA's Solar Terrestrial Relations Observatory and Solar Dynamics Observatory. We also describe a programme to develop two high-voltage ASICs to address the challenges presented with generating a CCD's bias voltages and drive clocks. A 0.35 μm, 50 V tolerant, CMOS process has been used to combine standard low-voltage 3.3 V transistors with high-voltage 50 V diffused MOSFET transistors that enable output buffers to drive CCD bias drains, gates and clock electrodes directly. We describe a CCD bias voltage generator ASIC that provides 24 independent and programmable 0-32 V outputs. Each channel incorporates a 10-bit digital-to-analogue converter, provides current drive of up to 20 mA into loads of 10 μF, and includes current-limiting and short-circuit protection. An on-chip telemetry system with a 12-bit analogue-to-digital converter enables the outputs and multiple off-chip camera voltages to be monitored. The ASIC can drive one or more CCDs and

A voltage regulator system with dynamic bandwidth boosting for passive UHF RFID transponders

International Nuclear Information System (INIS)

Shen Jinpeng; Wang Xin'an; Liu Shan; Li Shoucheng; Ruan Zhengkun

2013-01-01

This paper presents a voltage regulator system for passive UHF RFID transponders, which contains a rectifier, a limiter, and a regulator. The rectifier achieves power by rectifying the incoming RF energy. Due to the huge variation of the rectified voltage, a limiter at the rectifier output is used to clamp the rectified voltage. In this paper, the design of a limiter circuit is discussed in detail, which can provide a stable limiting voltage with low sensitivity to temperature variation and process dispersion. The key aspect of the voltage regulator system is the dynamic bandwidth boosting in the regulator. By sensing the excess current that is bypassed in the limiter during periods of excess energy, the bias current as well as the bandwidth of the regulator are increased, the output supply voltage can recover quickly from line transients during the periods of no RF energy to a full blast of RF energy. This voltage regulator system is implemented in a 0.18 μm CMOS process. (semiconductor integrated circuits)

An auto-biased 0.5 um CMOS transconductor for very high frequency applications

OpenAIRE

Garrido, Nuno; Franca, José E.

1998-01-01

This paper describes a CMOS transconductance cell for the implementation of very high frequency current-mode gm-C filters. It features simple pseudo-differential circuitry employing small device size transistors and yielding a power dissipation of less than 1 mW/pole at nominal 3.0 V supply voltage. Self-biased common-mode voltage designed to minimize mismatch errors, improves noise and stability behavior. Short channel effects are analyzed and simulation results are presented.

Voltage-controlled spin selection in a magnetic resonant tunneling diode.

Science.gov (United States)

Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

2003-06-20

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

Boron doped bcc-W films: Achieving excellent mechanical properties and tribological performance by regulating substrate bias voltage

Science.gov (United States)

Yang, Lina; Zhang, Kan; Zeng, Yi; Wang, Xin; Du, Suxuan; Tao, Chuanying; Ren, Ping; Cui, Xiaoqiang; Wen, Mao

2017-11-01

Boron doped bcc-W (WBx, x = B/W) films were deposited on Si(100) substrates by magnetron co-sputtering pure W and B targets. Our results reveal that when the absolute value of substrate bias voltage (Vb) increases from floating to 240 V, the value of x monotonously decreases from 0.18 to 0.04, accompanied by a phase transition from a mixture of tetragonal γ-W2B and body-centered cubic α-W(B) phase (-Vb ≤ 60 V) to α-W(B) single phase (-Vb > 60 V). Hardness, depending on Vb, increases first and then drops, where the maximum hardness of 30.8 GPa was obtained at -Vb = 60 V and far higher than pure W and W2B theoretical value. In the mixed phase structure, the grain boundaries strengthening, Hall-Petch effect and solid-solution strengthening induced by B dominate the strengthening mechanism. Astonishingly, the film grown at -Vb = 120 V still possesses twice higher hardness than pure W, wherein unexpectedly low (6.7 at.%) B concentration and only the single α-W(B) phase can be identified. In this case, both Hall-Petch effect and solid-solution strengthening work. Besides, low friction coefficient of ∼0.18 can be obtained for the films with α-W(B) phase, which is competitive to that of reported B-rich transition-metal borides, such as TiB2, CrB and CrB2.

The self-attribution bias and paranormal beliefs.

Science.gov (United States)

van Elk, Michiel

2017-03-01

The present study investigated the relation between paranormal beliefs, illusory control and the self-attribution bias, i.e., the motivated tendency to attribute positive outcomes to oneself while negative outcomes are externalized. Visitors of a psychic fair played a card guessing game and indicated their perceived control over randomly selected cards as a function of the congruency and valence of the card. A stronger self-attribution bias was observed for paranormal believers compared to skeptics and this bias was specifically related to traditional religious beliefs and belief in superstition. No relation between paranormal beliefs and illusory control was found. Self-report measures indicated that paranormal beliefs were associated to being raised in a spiritual family and to anomalous experiences during childhood. Thereby this study suggests that paranormal beliefs are related to specific cognitive biases that in turn are shaped by socio-cultural factors. Copyright © 2017 Elsevier Inc. All rights reserved.

Tetrode bias power supply for Indus-1, synchrotron radiation source

International Nuclear Information System (INIS)

Tripathi, A.; Badapanda, M.K.; Tyagi, R.; Upadhyay, R.; Bohrey, A.; Hannurkar, P.R.

2009-01-01

An AC regulator based 7 kV, 3 A high voltage DC power supply is designed, fabricated and tested on dummy load for BEL make Tetrode type 15000CX, used in the high power RF amplifier at 31.613 MHz employed with INDUS-1, Synchrotron Radiation Source (SRS). Various protections features like over voltage, under voltage, over current, phase failure and phase reversal are incorporated in this power supply and presented in this paper. As Tetrode amplifier requires various other power supplies in addition to this bias power supply and they are operated in a particular sequence for its healthy operation, suitable interlock arrangements have been incorporated and also presented in this paper. The reliable operation of protection and interlock features incorporated in this power supply has been checked with dummy load under simulated conditions. Three numbers of series limiting inductors, one in each phase, have been incorporated in this power supply to limit fault currents under unfavourable conditions and there by increasing the overall life of this power supply. It will replace existing 7 kV, 3 A HVDC power supply, which is in operation for more than fifteen years with Indus-1 SRS and is likely to be helpful in reducing the down time of Indus-1 SRS. It has better performance features than the existing power supply. The long term voltage stability better than 0.3 % and output ripple less than 0.3 % have been achieved for this Tetrode bias power supply. This power supply is likely to be integrated with INDUS-1 SRS soon. (author)

Using a Voltage Domain Programmable Technique for Low-Power Management Cell-Based Design

Directory of Open Access Journals (Sweden)

Ching-Hwa Cheng

2011-09-01

Full Text Available The Multi-voltage technique is an effective way to reduce power consumption. In the proposed cell-based voltage domain programmable (VDP technique, the high and low voltages applied to logic gates are programmable. The flexible voltage domain reassignment allows the chip performance and power consumption to be dynamically adjusted. In the proposed technique, the power switches possess the feature of flexible programming after chip manufacturing. This VDP method does not use an external voltage regulator to regulate the supply voltage level from outside of the chip but can be easily integrated within the design. This novel technique is proven by use of a video decoder test chip, which shows 55% and 61% power reductions compared to conventional single-Vdd and low-voltage designs, respectively. This power-aware performance adjusting mechanism shows great power reduction with a good power-performance management mechanism.

Diffusion of Brownian particles in a tilted periodic potential under the influence of an external Ornstein-Uhlenbeck noise

Science.gov (United States)

Bai, Zhan-Wu; Zhang, Wei

2018-01-01

The diffusion behaviors of Brownian particles in a tilted periodic potential under the influence of an internal white noise and an external Ornstein-Uhlenbeck noise are investigated through numerical simulation. In contrast to the case when the bias force is smaller or absent, the diffusion coefficient exhibits a nonmonotonic dependence on the correlation time of the external noise when bias force is large. A mechanism different from locked-to-running transition theory is presented for the diffusion enhancement by a bias force in intermediate to large damping. In the underdamped regime and the presence of external noise, the diffusion coefficient is a monotonically decreasing function of low temperature rather than a nonmonotonic function when external noise is absent. The diffusive process undergoes four regimes when bias force approaches but is less than its critical value and noises intensities are small. These behaviors can be attributed to the locked-to-running transition of particles.

Computer simulation model of reflex e-beam systems coupled to an external circuit

International Nuclear Information System (INIS)

Jungwirth, K.; Stavinoha, P.

1982-01-01

Dynamics of ions and relativistic electrons in various high-voltage reflexing systems (reflex diodes and triodes) was investigated numerically by means of 1 1/2-dimensional PIC simulation model OREBIA. Its perfected version OREBIA-REX also accounts for system coupling to an external power source circuit, thus yielding the currents and applied voltage self-consistently. Various modes of operation of reflex diode and triode were studied using both models. It is shown that neglecting the influence of the external circuit can lead to seve--re overestimation of both ion currents and electron accumulation rates. In coupled systems with ions repeated collapses of impedance due to electron-ion relaxation processes are observed. The current and voltage pulses calculated for several reflex diodes and triodes with and without ions are presented. (J.U.)

Substrate bias effects on composition and coercivity of CoCrTa/Cr thin films on canasite and glass

Science.gov (United States)

Deng, Y.; Lambeth, D. N.; Sui, X.; Lee, L.-L.; Laughlin, D. E.

1993-05-01

CoCrTa/Cr thin films were prepared by rf diode sputtering onto canasite and glass substrates at various bias voltages from two targets of different compositions (Co82.8Cr14.6Ta2.6 and Co86Cr12Ta2). While Auger depth profile analysis indicates that there is some broadening at the CoCrTa-Cr interface, x-ray fluorescence spectroscopy reveals that changes in alloy composition due to the resputtering processes are even more prominent. For both targets, as the substrate bias increases the Co content in the films declines, and the magnetization decreases. The maximum film coercivity appears to correlate to the final film composition. By investigating the results from both targets, it is concluded that the coercivity reaches a maximum when the film composition is in the neighborhood of Co84Cr13Ta3. Thus, to optimize the coercivity different bias voltages are required for each target. Excessive substrate bias, however, leads to films with low magnetization and coercivity.

A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

Science.gov (United States)

Yan Lu; Wing-Hung Ki

2014-06-01

A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

Voltage color tunable OLED with (Sm,Eu)-β-diketonate complex blend

Science.gov (United States)

Reyes, R.; Cremona, M.; Teotonio, E. E. S.; Brito, H. F.; Malta, O. L.

2004-09-01

Light emission from organic electroluminescent diodes (OLEDs) in which mixed samarium and europium β-diketonate complexes, [Sm 0.7Eu 0.3(TTA) 3(TPPO) 2], was used as the emitting layer is described. The electroluminescence spectra exhibit narrow peaks arising from 4f-intraconfigurational transitions of the Sm 3+ and Eu 3+ ions and a broad emission band attributed to the electrophosphorescence of the TTA ligand. The intensity ratio of the peaks determined by the bias voltage applied to the OLED, together with the ligand electrophosphorescence, allows to obtain a voltage-tunable color light source.

Effect of Substrate Bias on Friction Coefficient, Adhesion Strength and Hardness of TiN-COATED Tool Steel

Science.gov (United States)

Hamzah, Esah; Ali, Mubarak; Toff, Mohd Radzi Hj. Mohd

In the present study, TiN coatings have been deposited on D2 tool steel substrates by using cathodic arc physical vapor deposition technique. The objective of this research work is to determine the usefulness of TiN coatings in order to improve the micro-Vickers hardness and friction coefficient of TiN coating deposited on D2 tool steel, which is widely used in tooling applications. A Pin-on-Disc test was carried out to study the coefficient of friction versus sliding distance of TiN coating deposited at various substrate biases. The standard deviation parameter during tribo-test result showed that the coating deposited at substrate bias of -75 V was the most stable coating. A significant increase in micro-Vickers hardness was recorded, when substrate bias was reduced from -150 V to zero. Scratch tester was used to compare the critical loads for coatings deposited at different bias voltages and the adhesion achievable was demonstrated with relevance to the various modes, scratch macroscopic analysis, critical load, acoustic emission and penetration depth. A considerable improvement in TiN coatings was observed as a function of various substrate bias voltages.

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

KAUST Repository

Oh, Se Chung

2009-10-25

Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

KAUST Repository

Oh, Se Chung; Park, Seung Young; Manchon, Aurelien; Chshiev, Mairbek; Han, Jae Ho; Lee, Hyun Woo; Lee, Jang Eun; Nam, Kyung Tae; Jo, Younghun; Kong, Yo Chan; Dieny, Bernard; Lee, Kyung Jin

2009-01-01

Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

Design concept for radiation hardening of low power and low voltage dynamic memories

International Nuclear Information System (INIS)

Schleifer, H.; Ropp, T.V.D.; Reczek, W.

1995-01-01

A radiation hard low power, low voltage dynamic memory is obtained by the use of a dummy cell concept. Compared to conventional dummy cell concepts, this concept applies a fully sized dummy cell. By optimizing the dummy cell precharge voltage for 5 V and 3 V operation and the timing of the dummy word-line, the overall soft error rate (SER) of the chip is improved by 2 orders of magnitude. An additional improvement of 1 order of magnitude is possible for 3 V operation by adjusting substrate bias and cell plate voltage. The results are verified by an accelerated SER measurement with a radium 226 source and an additional field soft error study

High-voltage pulsed generator for dynamic fragmentation of rocks.

Science.gov (United States)

Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

2010-10-01

A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

High-voltage pulsed generator for dynamic fragmentation of rocks

Science.gov (United States)

Kovalchuk, B. M.; Kharlov, A. V.; Vizir, V. A.; Kumpyak, V. V.; Zorin, V. B.; Kiselev, V. N.

2010-10-01

A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ˜50 ns, current amplitude of ˜6 kA with the 40 Ω active load, and ˜20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

Linear induction accelerators made from pulse-line cavities with external pulse injection

International Nuclear Information System (INIS)

Smith, I.

1979-01-01

Two types of linear induction accelerator have been reported previously. In one, unidirectional voltage pulses are generated outside the accelerator and injected into the accelerator cavity modules, which contain ferromagnetic material to reduce energy losses in the form of currents induced, in parallel with the beam, in the cavity structure. In the other type, the accelerator cavity modules are themselves pulse-forming lines with energy storage and switches; parallel current losses are made zero by the use of circuits that generate bidirectional acceleration waveforms with a zero voltage-time integral. In a third type of design described here, the cavities are externally driven, and 100% efficient coupling of energy to the beam is obtained by designing the external pulse generators to produce bidirectional voltage waveforms with zero voltage-time integral. A design for such a pulse generator is described that is itself one hundred percent efficient and which is well suited to existing pulse power techniques. Two accelerator cavity designs are described that can couple the pulse from such a generator to the beam; one of these designs provides voltage doubling. Comparison is made between the accelerating gradients that can be obtained with this and the preceding types of induction accelerator

A high PSRR Class-D audio amplifier IC based on a self-adjusting voltage reference

OpenAIRE

Huffenus , Alexandre; Pillonnet , Gaël; Abouchi , Nacer; Goutti , Frédéric; Rabary , Vincent; Cittadini , Robert

2010-01-01

International audience; In a wide range of applications, audio amplifiers require a large Power Supply Rejection Ratio (PSRR) that the current Class-D architecture cannot reach. This paper proposes a self-adjusting internal voltage reference scheme that sets the bias voltages of the amplifier without losing on output dynamics. This solution relaxes the constraints on gain and feedback resistors matching that were previously the limiting factor for the PSRR. Theory of operation, design and IC ...

Online Voltage Stability Assessment for Load Areas Based on the Holomorphic Embedding Method

DEFF Research Database (Denmark)

Liu, Chengxi; Wang, Bin; Hu, Fengkai

2018-01-01

This paper proposes an online steady-state voltage stability assessment scheme to evaluate the proximity to voltage collapse at each bus of a load area. Using a non-iterative holomorphic embedding method (HEM) with a proposed physical germ solution, an accurate loading limit at each load bus can...... be calculated based on online state estimation on the entire load area and a measurement-based equivalent for the external system. The HEM employs a power series to calculate an accurate Power-Voltage (P-V) curve at each load bus and accordingly evaluates the voltage stability margin considering load variations...... and then demonstrated on a load area of the Northeast Power Coordinating Council (NPCC) 48-generator, 140-bus power system....

Simulation and resolution of voltage reversal in microbial fuel cell stack.

Science.gov (United States)

Sugnaux, Marc; Savy, Cyrille; Cachelin, Christian Pierre; Hugenin, Gérald; Fischer, Fabian

2017-08-01

To understand the biotic and non-biotic contributions of voltage reversals in microbial fuel cell stacks (MFC) they were simulated with an electronic MFC-Stack mimic. The simulation was then compared with results from a real 3L triple MFC-Stack with shared anolyte. It showed that voltage reversals originate from the variability of biofilms, but also the external load plays a role. When similar biofilm properties were created on all anodes the likelihood of voltage reversals was largely reduced. Homogenous biofilms on all anodes were created by electrical circuit alternation and electrostimulation. Conversely, anolyte recirculation, or increased nutriment supply, postponed reversals and unfavourable voltage asymmetries on anodes persisted. In conclusion, voltage reversals are often a negative event but occur also in close to best MFC-Stack performance. They were manageable and this with a simplified MFC architecture in which multiple anodes share the same anolyte. Copyright © 2017 Elsevier Ltd. All rights reserved.

Application of source biasing technique for energy efficient DECODER circuit design: memory array application

Science.gov (United States)

Gupta, Neha; Parihar, Priyanka; Neema, Vaibhav

2018-04-01

Researchers have proposed many circuit techniques to reduce leakage power dissipation in memory cells. If we want to reduce the overall power in the memory system, we have to work on the input circuitry of memory architecture i.e. row and column decoder. In this research work, low leakage power with a high speed row and column decoder for memory array application is designed and four new techniques are proposed. In this work, the comparison of cluster DECODER, body bias DECODER, source bias DECODER, and source coupling DECODER are designed and analyzed for memory array application. Simulation is performed for the comparative analysis of different DECODER design parameters at 180 nm GPDK technology file using the CADENCE tool. Simulation results show that the proposed source bias DECODER circuit technique decreases the leakage current by 99.92% and static energy by 99.92% at a supply voltage of 1.2 V. The proposed circuit also improves dynamic power dissipation by 5.69%, dynamic PDP/EDP 65.03% and delay 57.25% at 1.2 V supply voltage.

A ferrite LTCC based dual purpose helical antenna providing bias for tunability

KAUST Repository

Ghaffar, Farhan A.

2015-03-30

Typically, magnetically tunable antennas utilize large external magnets or coils to provide the magneto-static bias. In this work, we present a novel concept of combining the antenna and the bias coil in one structure. A helical antenna has been optimized to act as the bias coil in a ten layer ferrite LTCC package, thus performing two functions. This not only reduces the overall size of the system by getting rid of the external bias source but also eliminates demagnetization effect (fields lost at air-to-substrate interface), which reduces the required magneto-static field strength and makes the design efficient. RF choking inductor and DC blocking capacitor have been monolithically integrated as package elements to allow the magnetostatic and microwave excitation at the same time. The design has been optimized for its low frequency and high frequency performance in two different simulators. A measured tuning range of 10% is achieved at a center frequency of 13 GHz. The design is highly suitable for low cost, compact, light-weight and tunable microwave systems. © 2002-2011 IEEE.

A ferrite LTCC based dual purpose helical antenna providing bias for tunability

KAUST Repository

Ghaffar, Farhan A.; Shamim, Atif

2015-01-01

Typically, magnetically tunable antennas utilize large external magnets or coils to provide the magneto-static bias. In this work, we present a novel concept of combining the antenna and the bias coil in one structure. A helical antenna has been optimized to act as the bias coil in a ten layer ferrite LTCC package, thus performing two functions. This not only reduces the overall size of the system by getting rid of the external bias source but also eliminates demagnetization effect (fields lost at air-to-substrate interface), which reduces the required magneto-static field strength and makes the design efficient. RF choking inductor and DC blocking capacitor have been monolithically integrated as package elements to allow the magnetostatic and microwave excitation at the same time. The design has been optimized for its low frequency and high frequency performance in two different simulators. A measured tuning range of 10% is achieved at a center frequency of 13 GHz. The design is highly suitable for low cost, compact, light-weight and tunable microwave systems. © 2002-2011 IEEE.

Application of Photocurrent Model on Polymer Solar Cells Under Forward Bias Stress

DEFF Research Database (Denmark)

Rizzo, Antonio; Torto, Lorenzo; Wrachien, Nicola

2017-01-01

We performed a constant current stress at forward bias on organic heterojunction solar cells. We measured current voltage curves in both dark and light at each stress step to calculate the photocurrent. An existing model applied to photocurrent experimental data allows the estimation of several...

Skip or Stay: Users' Behavior in Dealing with Onsite Information Interaction Crowd-Bias

NARCIS (Netherlands)

Hashemi, S.H.; Kamps, J.

2017-01-01

Mobile devices and the internet of things blend our virtual online behavior with our actions in the real-world. The physical context creates numerous external factors that play a role in the user's online interactions, thus creating new external biases in the collected information interaction logs.

Active Power Filter DC Bus Voltage Piecewise Reaching Law Variable Structure Control

Directory of Open Access Journals (Sweden)

Baolian Liu

2014-01-01

Full Text Available The DC bus voltage stability control is one key technology to ensure that Active Power Filter (APF operates stably. The external disturbances such as power grid and load fluctuation and the system parameters changing may affect the stability of APF DC bus voltage and the normal operation of APF. The mathematical model of DC bus voltage is established according to power balance principle and a DC bus voltage piecewise reaching law variable structure control algorithm is proposed to solve the above problem, and the design method is given. The simulation and experiment results proved that the proposed variable structure control algorithm can eliminate the chattering problem existing in traditional variable structure control effectively, is insensitive to system disturbance, and has good robustness and fast dynamic response speed and stable DC bus voltage with small fluctuation. The above advantages ensure the compensation effect of APF.

Application of Load Compensation in Voltage Controllers of Large Generators in the Polish Power Grid

Directory of Open Access Journals (Sweden)

Bogdan Sobczak

2014-03-01

Full Text Available The Automatic Voltage Regulator normally controls the generator stator terminal voltage. Load compensation is used to control the voltage which is representative of the voltage at a point either within or external to the generator. In the Polish Power Grid (PPG compensation is ready to use in every AVR of a large generator, but it is utilized only in the case of generators operating at the same medium voltage buses. It is similar as in most European Power Grids. The compensator regulating the voltage at a point beyond the machine terminals has significant advantages in comparison to the slower secondary Voltage and Reactive Power Control System (ARNE1. The compensation stiffens the EHV grid, which leads to improved voltage quality in the distribution grid. This effect may be particularly important in the context of the dynamic development of wind and solar energy.

Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

Institute of Scientific and Technical Information of China (English)

Long Yun-ze; Yin Zhi-Hua; Li Meng-Meng; Gu Chang-Zhi; Duvail Jean-Luc; Jin Ai-zi; Wan Mei-xiang

2009-01-01

We report the current-voltage (Ⅰ-Ⅴ) characteristics of individual polypyrrole nanotubes and poly(3,4-ethylenedioxythiophene) (PEDOT) nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling (FIT) and thermal excitation model (Kaiser expression) to fit the temperature and electric-field dependent Ⅰ-Ⅴ curves. It is found that the Ⅰ-Ⅴ data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation (or zero-bias conductance suppression)could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition,similar Ⅰ-Ⅴ characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.

The effects of an external electric field on the dynamics of cold plasma jets—experimental and computational studies

International Nuclear Information System (INIS)

Naidis, G V; Walsh, J L

2013-01-01

Atmospheric pressure plasma jets provide a convenient and stable means to transport highly reactive plasma species beyond the confines of the plasma generating electrodes and into the ambient air; such characteristics make them an ideal tool for many emerging plasma processing applications. As the guided streamer exits the jet capillary, the application of an external electric field can significantly influence the dynamics of propagation, potentially providing a means to manipulate the transport of plasma species to a downstream substrate. In this paper the influence of positive and negative voltages pulses applied to an external electrode situated along the axis of streamer propagation is examined experimentally and computationally using a simplified 1.5D model. It is shown that application of a positive voltage pulse to the external electrode reduces the velocity of propagation of the cathode-directed streamer and the application of a negative voltage pulse increases the velocity of propagation. Further to this, the application of high positive voltages to the external electrodes effectively inhibits propagation and results in a significant decrease in the emission intensity from excited states populated by energetic electrons. The results obtained experimentally are compared and contrasted with those from the computational model to uncover the underlying physical mechanisms at play. (paper)

Voltage Mode Universal Biquad Using CCCII

Directory of Open Access Journals (Sweden)

Ashish Ranjan

2011-01-01

Full Text Available This paper proposes a multi-input single-output (MISO second-order active-C voltage mode (VM universal filter using two second-generation current-controlled current conveyors (CCCIIs and two equal-valued capacitors. The proposed circuit realizes low pass, band pass, high pass, all pass, and notch responses from the same topology. The filter uses-minimum number of passive components and no resistor which is suitable for IC Design. The filter enjoys low-sensitivity performance and exhibits electronic and orthogonal tunability of pole frequency (0 and quality factor (0 via bias current of CCCIIs. PSPICE simulation results confirm the theory.

Observation of electrostatically released DNA from gold electrodes with controlled threshold voltages.

Science.gov (United States)

Takeishi, Shunsaku; Rant, Ulrich; Fujiwara, Tsuyoshi; Buchholz, Karin; Usuki, Tatsuya; Arinaga, Kenji; Takemoto, Kazuya; Yamaguchi, Yoshitaka; Tornow, Marc; Fujita, Shozo; Abstreiter, Gerhard; Yokoyama, Naoki

2004-03-22

DNA oligo-nucleotides, localized at Au metal electrodes in aqueous solution, are found to be released when applying a negative bias voltage to the electrode. The release was confirmed by monitoring the intensity of the fluorescence of cyanine dyes (Cy3) linked to the 5' end of the DNA. The threshold voltage of the release changes depending on the kind of linker added to the DNA 3'-terminal. The amount of released DNA depends on the duration of the voltage pulse. Using this technique, we can retain DNA at Au electrodes or Au needles, and release the desired amount of DNA at a precise location in a target. The results suggest that DNA injection into living cells is possible with this method. (c) 2004 American Institute of Physics

Subcell Light Current-Voltage Characterization of Irradiated Multijunction Solar Cell

Directory of Open Access Journals (Sweden)

Walker Don

2017-01-01

Full Text Available The degradation of individual subcell J-V parameters, such as short circuit current, open circuit voltage, fill factor, and power of a GaInP/GaInAs/Ge triple junction solar cell by 1 MeV electrons were derived utilizing the spectral reciprocity relation between electroluminescence and external quantum efficiency. After exposure to a fluence of 1 × 1015 1 MeV electrons, it was observed that up to 67% of the voltage loss is from the middle, GaInAs subcell. Also, the dark saturation current of the Ge and GaInAs subcells increased but a simultaneous decrease in ideality factor caused a reduction of the open circuit voltage. The reduced ideality factor further indicates a change in the primary recombination mechanism.

External Aiding Methods for IMU-Based Navigation

Science.gov (United States)

2016-11-26

Modeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3.2.1 Startup Bias...Figure Page 1 Three Distributions Implemented for Error Parameters in SAIMUN . . . . . . . . . . . . 5 2 Accelerometer Output Corrupted by Startup ...external aiding, simulate the error sources encountered in the acquisition of measurement data, emulate the navigation software, and perform a range of

Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

Energy Technology Data Exchange (ETDEWEB)

Kiazadeh, Asal [Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Universidade do Algarve, FCT, 8000-139 Faro (Portugal); Gomes, Henrique L. [Universidade do Algarve, FCT, 8000-139 Faro (Portugal); IT-Instituto de Telecomunicações, Av. Rovisco, Pais, 1, 1049-001 Lisboa (Portugal); Barquinha, Pedro; Martins, Jorge; Rovisco, Ana; Pinto, Joana V.; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, i3N/CENIMAT, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

2016-08-01

The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75%, and the light induced instability is reduced by 35%. The operational stability is quantified by fitting the threshold voltage shift with a stretched exponential model. Storage time as long as 7 months does not cause any measurable degradation on the electrical performance. It is proposed that parylene plays not only the role of an encapsulation layer but also of a defect passivation on the top semiconductor surface. It is also reported that depletion-mode TFTs are less sensitive to light induced instabilities. This is attributed to a defect neutralization process in the presence of free electrons.

Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

Directory of Open Access Journals (Sweden)

William J.B. Heffernan

2014-12-01

Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

Science.gov (United States)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

rf power dependence of subharmonic voltage spectra of two-dimensional Josephson-junction arrays

International Nuclear Information System (INIS)

Hebboul, S.E.; Garland, J.C.

1993-01-01

We have measured the rf-bias-current dependence of the ν/2 subharmonic spectral response of planar 300x300 Nb-Au-Nb proximity-coupled Josephson-junction arrays. The ν/2 subharmonic voltage spectrum was examined at two rf-bias frequencies, ν/ν c ∼1.4, 2.0 (ν c ∼120 MHz), and in applied magnetic fields corresponding to f=0,1/2 flux quantum per plaquette. The measurements were compared to analytical predictions for an rf-biased asymmetric superconducting quantum interference device with non-negligble loop inductance and large rf-bias-current amplitudes, based on the resistively shunted Josephson-junction model. Reasonable agreement was found between experiment and theory, suggesting that a possible origin for the observed subharmonic behavior in arrays involves an interplay between array plaquette inductances and junction critical-current variations

A measurement system for two-dimensional DC-biased properties of magnetic materials

International Nuclear Information System (INIS)

Enokizono, M.; Matsuo, H.

2003-01-01

So far, the DC-biased magnetic properties have been measured in one dimension (scalar). However, these scalar magnetic properties are not enough to clarify the DC-biased magnetic properties because the scalar magnetic properties cannot exactly take into account the phase difference between the magnetic flux density B vector and the magnetic filed strength H vector. Thus, the magnetic field strength H and magnetic flux density B in magnetic materials must be measured as vector quantities (two-dimensional), directly. We showed the measurement system using a single-sheet tester (SST) to clarify the two-dimensional DC-biased magnetic properties. This system excited AC in Y-direction and DC in X-direction. This paper shows the measurement system using an SST and presents the measurement results of two-dimensional DC-biased magnetic properties when changing the DC exciting voltage and the iron loss

Possibility of persistent voltage observation in a system of asymmetric superconducting rings

International Nuclear Information System (INIS)

Burlakov, A.A.; Gurtovoi, V.L.; Ilin, A.I.; Nikulov, A.V.; Tulin, V.A.

2012-01-01

The possibility of observing persistent voltage in superconducting rings of different arm widths is experimentally investigated. It was previously found that switching of the arms between superconducting and normal states by an AC current induces DC voltage oscillation in the magnetic field with a period corresponding to the flux quantum inside the ring. We used systems with a large number of asymmetric rings connected in series to investigate the possibility of observing this quantum phenomenon near the superconducting transition, where thermal fluctuations lead to switching of ring segments without an external influence and the persistent current is much smaller than in the superconducting state. -- Highlights: ► A possibility to observe the persistent voltage is investigated experimentally. ► The persistent voltage is a DC voltage observed at thermodynamic equilibrium. ► It oscillates in magnetic field like the persistent current in superconducting ring. ► The period of the oscillations corresponds to the flux quantum inside the ring. ► The quantum oscillations of the DC voltage were observed on asymmetric rings.

Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions

Directory of Open Access Journals (Sweden)

D. Abou-Ras

2015-07-01

Full Text Available Electron-beam-induced current (EBIC measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short-circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe2 solar cells. From the EBIC profiles acquired across ZnO/CdS/CuInSe2/Mo stacks exhibiting p-n junctions with different net doping densities in the CuInSe2 layers, values for the width of the space-charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w2 and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance-voltage measurements.

Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

Energy Technology Data Exchange (ETDEWEB)

Wu, Mingzhong [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Tian, Xiubo, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Li, Muqin [School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Gong, Chunzhi [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Wei, Ronghua [Southwest Research Institute, San Antonio, TX 78238 (United States)

2016-07-15

Highlights: • A novel Meshed Plasma Immersion Ion Deposition is proposed. • The deposited Si-DLC films possess denser structures and high deposition rate. • It is attributed to ion bombardment of the deposited films. • The ion energy can be independently controlled by an additional bias (novel set up). - Abstract: Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C{sub 2}H{sub 2} and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H{sup 3}/E{sup 2} and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this

A 60 GOPS/W, -1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology

Science.gov (United States)

Rossi, Davide; Pullini, Antonio; Loi, Igor; Gautschi, Michael; Gürkaynak, Frank K.; Bartolini, Andrea; Flatresse, Philippe; Benini, Luca

2016-03-01

Ultra-low power operation and extreme energy efficiency are strong requirements for a number of high-growth application areas, such as E-health, Internet of Things, and wearable Human-Computer Interfaces. A promising approach to achieve up to one order of magnitude of improvement in energy efficiency over current generation of integrated circuits is near-threshold computing. However, frequency degradation due to aggressive voltage scaling may not be acceptable across all performance-constrained applications. Thread-level parallelism over multiple cores can be used to overcome the performance degradation at low voltage. Moreover, enabling the processors to operate on-demand and over a wide supply voltage and body bias ranges allows to achieve the best possible energy efficiency while satisfying a large spectrum of computational demands. In this work we present the first ever implementation of a 4-core cluster fabricated using conventional-well 28 nm UTBB FD-SOI technology. The multi-core architecture we present in this work is able to operate on a wide range of supply voltages starting from 0.44 V to 1.2 V. In addition, the architecture allows a wide range of body bias to be applied from -1.8 V to 0.9 V. The peak energy efficiency 60 GOPS/W is achieved at 0.5 V supply voltage and 0.5 V forward body bias. Thanks to the extended body bias range of conventional-well FD-SOI technology, high energy efficiency can be guaranteed for a wide range of process and environmental conditions. We demonstrate the ability to compensate for up to 99.7% of chips for process variation with only ±0.2 V of body biasing, and compensate temperature variation in the range -40 °C to 120 °C exploiting -1.1 V to 0.8 V body biasing. When compared to leading-edge near-threshold RISC processors optimized for extremely low power applications, the multi-core architecture we propose has 144× more performance at comparable energy efficiency levels. Even when compared to other low-power processors

Ion acceleration in a helicon source due to the self-bias effect

International Nuclear Information System (INIS)

Wiebold, Matt; Sung, Yung-Ta; Scharer, John E.

2012-01-01

Time-averaged plasma potential differences up to 165 V over several hundred Debye lengths are observed in low pressure (p n i ≈ 7 kT e in some cases. RF power up to 500 W at 13.56 MHz is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field, adjustable up to 1 kG. A retarding potential analyzer (RPA) measures the ion energy distribution function (IEDF) and a swept emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in density as RF power is increased. In the capacitive (E) mode, large fluctuations of the plasma potential (V p-p ≳140V, V p-p /V p ≈150%) exist at the RF frequency and its harmonics. The more mobile electrons can easily respond to RF-timescale gradients in the plasma potential whereas the inertially constrained ions cannot, leading to an initial flux imbalance and formation of a self-bias voltage between the source and expansion chambers. In the capacitive mode, the ion acceleration is not well described by an ambipolar relation, while in the inductive and helicon modes the ion acceleration more closely follows an ambipolar relation. The scaling of the potential gradient with the argon flow rate and RF power are investigated, with the largest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees with that predicted for RF self-bias at a wall. Rapid fluctuations in the plasma potential result in a time-dependent axial electron flux that acts to “neutralize” the accelerated ion population, resulting in a zero net time-averaged current through the acceleration region when an insulating upstream boundary condition is enforced. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate.

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

CERN Document Server

Benoit, M.

2016-07-21

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

DEFF Research Database (Denmark)

Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

2013-01-01

Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

Electro-optical effect of a magnetically biased ferronematic liquid crystal.

Science.gov (United States)

Chen, S H; Liang, B J

1988-09-01

The electro-optical effect of a magnetically biased ferronematic liquid-crystal film is investigated by using birefringence measurements. When a magnetic field is applied, the threshold voltage of the Freedericksz transition no longer exists. The dependence of the birefringence on the magnetic field strength in the low field regime is presented. A theory that accounts for the results is given.

Modulation of low-frequency oscillations in GaAs MESFETs' channel current by sidegating bias

Institute of Scientific and Technical Information of China (English)

DING Yong; LU Shengli; ZHAO Fuchuan

2005-01-01

Low-frequency oscillations in channel current are usually observed when measuring the GaAs MESFET's output characteristics. This paper studies the oscillations by testing the MESFET's output characteristics under different sidegate bias conditions. It is shown that the low-frequency oscillations of channel current are directly related to the sidegate bias. In other words, the sidegate bias can modulate the oscillations. Whether the sidegate bias varies positively or negatively, there will inevitably be a threshold voltage after which the low-frequency oscillations disappear. The observation is strongly dependent upon the peculiarities of channel-substrate (C-S) junction and impact ionization of traps-EL2 under high field. This conclusion is of particular pertinence to the design of low-noise GaAs IC's.

Current and Voltage Mode Multiphase Sinusoidal Oscillators Using CBTAs

Directory of Open Access Journals (Sweden)

M. Sagbas

2013-04-01

Full Text Available Current-mode (CM and voltage-mode (VM multiphase sinusoidal oscillator (MSO structures using current backward transconductance amplifier (CBTA are proposed. The proposed oscillators can generate n current or voltage signals (n being even or odd equally spaced in phase. n+1 CBTAs, n grounded capacitors and a grounded resistor are used for nth-state oscillator. The oscillation frequency can be independently controlled through transconductance (gm of the CBTAs which are adjustable via their bias currents. The effects caused by the non-ideality of the CBTA on the oscillation frequency and condition have been analyzed. The performance of the proposed circuits is demonstrated on third-stage and fifth-stage MSOs by using PSPICE simulations based on the 0.25 µm TSMC level-7 CMOS technology parameters.

Intra- and inter-layer charge redistribution in biased bilayer graphene

Directory of Open Access Journals (Sweden)

Rui-Ning Wang

2016-03-01

Full Text Available We investigate the spatial redistribution of the electron density in bilayer graphene in the presence of an interlayer bias within density functional theory. It is found that the interlayer charge redistribution is inhomogeneous between the upper and bottom layers and the transferred charge from the upper layer to the bottom layer linearly increases with the external voltage which further makes the gap at K point linearly increase. However, the band gap will saturate to 0.29 eV in the strong-field regime, but it displays a linear field dependence at the weak-field limit. Due to the AB-stacked way, two carbon atoms per unit cell in the same layer are different and there is also a charge transfer between them, making the widths of π valence bands reduced. In the bottom layer, the charge transfers from the direct atoms which directly face another carbon atom to the indirect atoms facing the center of the hexagon on the opposite layer, while the charge transfers from the indirect atoms to the direct atoms in the upper layer. Furthermore, there is a diploe between the upper and bottom layers which results in the reduction of the interlayer hopping interaction.

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors.

Science.gov (United States)

Chaudhry, Mujeeb Ullah; Tetzner, Kornelius; Lin, Yen-Hung; Nam, Sungho; Pearson, Christopher; Groves, Chris; Petty, Michael C; Anthopoulos, Thomas D; Bradley, Donal D C

2018-05-21

We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In 2 O 3 /ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm 2 /(V s)) with appreciable current on/off ratios (≈10 3 ) and an external quantum efficiency of 2 × 10 -2 % at 700 cd/m 2 . The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer

Science.gov (United States)

An, Yanbin; Behnam, Ashkan; Pop, Eric; Bosman, Gijs; Ural, Ant

2015-09-01

Metal-semiconductor Schottky junction devices composed of chemical vapor deposition grown monolayer graphene on p-type silicon substrates are fabricated and characterized. Important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance, are extracted from forward bias current-voltage characteristics using a previously established method modified to take into account the interfacial native oxide layer present at the graphene/silicon junction. It is found that the ideality factor can be substantially increased by the presence of the interfacial oxide layer. Furthermore, low frequency noise of graphene/silicon Schottky junctions under both forward and reverse bias is characterized. The noise is found to be 1/f dominated and the shot noise contribution is found to be negligible. The dependence of the 1/f noise on the forward and reverse current is also investigated. Finally, the photoresponse of graphene/silicon Schottky junctions is studied. The devices exhibit a peak responsivity of around 0.13 A/W and an external quantum efficiency higher than 25%. From the photoresponse and noise measurements, the bandwidth is extracted to be ˜1 kHz and the normalized detectivity is calculated to be 1.2 ×109 cm Hz1/2 W-1. These results provide important insights for the future integration of graphene with silicon device technology.

5.0 kV breakdown-voltage vertical GaN p-n junction diodes

Science.gov (United States)

Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

2018-04-01

A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

DC-dynamic biasing for >50× switching time improvement in severely underdamped fringing-field electrostatic MEMS actuators

International Nuclear Information System (INIS)

Small, J; Liu, X; Fruehling, A; Garg, A; Peroulis, D

2012-01-01

This paper presents the design and experimental validation of dc-dynamic biasing for > 50× switching time improvement in severely underdamped fringing-field electrostatic MEMS actuators. The electrostatic fringing-field actuator is used to demonstrate the concept due to its robust device design and inherently low damping conditions. In order to accurately quantify the gap height versus voltage characteristics, a heuristic model is developed. The difference between the heuristic model and numerical simulation is less than 5.6% for typical MEMS geometries. MEMS fixed–fixed beams are fabricated and measured for experimental validation. Good agreement is observed between the calculated and measured results. For a given voltage, the measured and calculated displacements are typically within 10%. Lastly, the derived model is used to design a dc-dynamic bias waveform to improve the switching time of the underdamped MEMS actuators. With dynamic biasing, the measured up-to-down and down-to-up switching time of the actuator is ∼35 μs. On the other hand, coventional step biasing results in a switching time of ∼2 ms for both up-to-down and down-to-up states. (paper)

Zero bias thermally stimulated currents in synthetic diamond

Science.gov (United States)

Mori, R.; Miglio, S.; Bruzzi, M.; Bogani, F.; De Sio, A.; Pace, E.

2009-06-01

Zero bias thermally stimulated currents (ZBTSCs) have been observed in single crystal high pressure high temperature (HPHT) and polycrystalline chemical vapor deposited (pCVD) diamond films. The ZBTSC technique is characterized by an increased sensitivity with respect to a standard TSC analysis. Due to the absence of the thermally activated background current, new TSC peaks have been observed in both HPHT and pCVD diamond films, related to shallow activation energies usually obscured by the emission of the dominant impurities. The ZBTSC peaks are explained in terms of defect discharge in the nonequilibrium potential distribution created by a nonuniform traps filling at the metal-diamond junctions. The electric field due to the charged defects has been estimated in a quasizero bias TSC experiment by applying an external bias.

Conductance of single-atom platinum contacts: Voltage dependence of the conductance histogram

DEFF Research Database (Denmark)

Nielsen, S.K.; Noat, Y.; Brandbyge, Mads

2003-01-01

The conductance of a single-atom contact is sensitive to the coupling of this contact atom to the atoms in the leads. Notably for the transition metals this gives rise to a considerable spread in the observed conductance values. The mean conductance value and spread can be obtained from the first...... peak in conductance histograms recorded from a large set of contact-breaking cycles. In contrast to the monovalent metals, this mean value for Pt depends strongly on the applied voltage bias and other experimental conditions and values ranging from about 1 G(0) to 2.5 G(0) (G(0)=2e(2)/h) have been...... reported. We find that at low bias the first peak in the conductance histogram is centered around 1.5 G(0). However, as the bias increases past 300 mV the peak shifts to 1.8 G(0). Here we show that this bias dependence is due to a geometric effect where monatomic chains are replaced by single-atom contacts...

10-bit rapid single flux quantum digital-to-analog converter for ac voltage standard

International Nuclear Information System (INIS)

Maezawa, M; Hirayama, F

2008-01-01

Digital-to-analog (D/A) converters based on rapid single flux quantum (RSFQ) technology are under development for ac voltage standard applications. We present design and test results on a prototype 10-bit version integrated on a single chip. The 10-bit chip includes over 6000 Josephson junctions and consumes a bias current exceeding 1 A. To reduce the effects of the high bias current on circuit operation, a custom design method was employed in part and large circuit blocks were divided into smaller ones. The 10-bit chips were fabricated and tested at low speed. The test results suggested that our design approach could manage large bias currents on the order of 1 A per chip

Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

International Nuclear Information System (INIS)

Yamada, Takahiro; Maezawa, Masaaki; Urano, Chiharu

2015-01-01

Highlights: • We demonstrated RSFQ digital components of a new quantum voltage noise source. • A pseudo-random number generator and variable pulse number multiplier are designed. • Fabrication process is based on four Nb wiring layers and Nb/AlOx/Nb junctions. • The circuits successfully operated with wide dc bias current margins, 80–120%. - Abstract: We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80–120%, with respect to the designed bias currents.

Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

Energy Technology Data Exchange (ETDEWEB)

Yamada, Takahiro, E-mail: yamada-takahiro@aist.go.jp [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Maezawa, Masaaki [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Urano, Chiharu [National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Central 3, Umezono 1-1-1, Tsukuba, Ibaraki 305-8563 (Japan)

2015-11-15

Highlights: • We demonstrated RSFQ digital components of a new quantum voltage noise source. • A pseudo-random number generator and variable pulse number multiplier are designed. • Fabrication process is based on four Nb wiring layers and Nb/AlOx/Nb junctions. • The circuits successfully operated with wide dc bias current margins, 80–120%. - Abstract: We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80–120%, with respect to the designed bias currents.

High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

CERN Document Server

Marzocchi, Badder

2017-01-01

The CMS Electromagnetic Calorimeter is made of scintillating lead tungstate crystals, using avalanche photodiodes (APD) as photo-detectors in the barrel part. The high voltage system, consisting of 1224 channels, biases groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

A Novel Programmable CMOS Fuzzifiers Using Voltage-to-Current Converter Circuit

Directory of Open Access Journals (Sweden)

K. P. Abdulla

2012-01-01

Full Text Available This paper presents a new voltage-input, current-output programmable membership function generator circuit (MFC using CMOS technology. It employs a voltage-to-current converter to provide the required current bias for the membership function circuit. The proposed MFC has several advantageous features. This MFC can be reconfigured to perform triangular, trapezoidal, S-shape, Z-Shape, and Gaussian membership forms. This membership function can be programmed in terms of its width, slope, and its center locations in its universe of discourses. The easily adjustable characteristics of the proposed circuit and its accuracy make it suitable for embedded system and industrial control applications. The proposed MFC is designed using the spice software, and simulation results are obtained.

The high voltage divider - a tool for comparison of measurement equipment in diagnostic radiology

International Nuclear Information System (INIS)

Slavchev, A.; Litchev, A.; Constantinov, B.

2004-01-01

The high voltage divider (HVD) is designed for control and analysis of the characteristics of the X-ray generator. The low voltage analogous signals produced by the divider are proportional to the high voltage (kVp) applied to the x-ray tube by a ratio 1:1000 or 1:10000 and can be measured with external test devices like storage oscilloscope (or digital multimeter). The exposure duration and the wave form may be visualized, too. Apart of this invasive way the high voltage also may be measured non-invasively by means of appropriate devices as well as indirectly through calculations. Since the invasive method of measurement with the high voltage divider is distinguished by a high accuracy, it may be utilized as an effective tool for calibration of different devices and for comparison of the measurement methods. (authors)

A dynamic-biased dual-loop-feedback CMOS LDO regulator with fast transient response

International Nuclear Information System (INIS)

Wang Han; Sun Maomao

2014-01-01

This paper presents a low-dropout regulator (LDO) for portable applications with dual-loop feedback and a dynamic bias circuit. The dual-loop feedback structure is adopted to reduce the output voltage spike and the response time of the LDO. The dynamic bias circuit enhances the slew rate at the gate of the power transistor. In addition, an adaptive miller compensation technique is employed, from which a single pole system is realized and over a 59° phase margin is achieved under the full range of the load current. The proposed LDO has been implemented in a 0.6-μm CMOS process. From the experimental results, the regulator can operate with a minimum dropout voltage of 200 mV at a maximum 300 mA load and I Q of 113 μA. The line regulation and load regulation are improved to 0.1 mV/V and 3.4 μV/mA due to the sufficient loop gain provided by the dual feedback loops. Under a full range load current step, the voltage spikes and the recovery time of the proposed LDO is reduced to 97 mV and 0.142 μs respectively. (semiconductor integrated circuits)

Individual Performance: From Common Source Bias to Institutionalized Assessment

DEFF Research Database (Denmark)

Andersen, Lotte Bøgh; Heinesen, Eskil; Pedersen, Lene Holm

2016-01-01

theory and the sociology of professions. Empirically, we ask whether different measures of individual performance produce different results. The investigated performance measures vary with regard to risk of common data source bias, standardization of assessment criteria, and external verification...... dimension for the same teachers: the teachers' self-reported contributions to students' academic skills, the students' marks for the year's work given by the teacher, marks in oral exams with one external examiner and the teacher, and marks in written exams with at least one external examiner....... The associations are systematically stronger when the performance measure comes from the same data source as the explanatory variables, but when separate data sources are used and the measurement scale is institutionalized, the level of external verification does not matter much. Based on institutional theory...

Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA MOSFET using center potential

Directory of Open Access Journals (Sweden)

K.P. Pradhan

2015-12-01

Full Text Available In this paper, an analytical threshold voltage model is proposed for a cylindrical gate-all-around (CGAA MOSFET by solving the 2-D Poisson’s equation in the cylindrical coordinate system. A comparison is made for both the center and the surface potential model of CGAA MOSFET. This paper claims that the calculation of threshold voltage using center potential is more accurate rather than the calculation from surface potential. The effects of the device parameters like the drain bias (VDS, oxide thickness (tox, channel thickness (r, etc., on the threshold voltage are also studied in this paper. The model is verified with 3D numerical device simulator Sentaurus from Synopsys Inc.

Laser ablation of titanium in liquid in external electric field

Energy Technology Data Exchange (ETDEWEB)

Serkov, A.A. [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); The Federal State Educational Institution of Higher Professional Education, “Moscow Institute of Physics and Technology (State University)”, 9 Institutskiy per., 141700, Dolgoprudny, Moscow Region (Russian Federation); Barmina, E.V., E-mail: barminaev@gmail.com [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); Shafeev, G.A. [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31, Kashirskoye Highway, 115409 Moscow (Russian Federation); Voronov, V.V. [A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation)

2015-09-01

Highlights: • Ablation of a bulk Ti target by 10 ps laser pulses in liquid is experimentally studied in external DC electric field. • Applied cathodic bias leads to increase in average size of self-organized nanostructures formed upon ablation of titanium target. • Laser ablation of Ti target in external electric field results in generation of elongated titanium oxide nanoparticles. - Abstract: Ablation of a bulk Ti target by 10 ps laser pulses in water is experimentally studied in external DC electric field. It is demonstrated that both lateral size of nanostructures (NS) on Ti surface and their density depend on the electric field applied to the target. Scanning Electron Microscopy of NS reveals the shift of their size distribution function toward larger sizes with applied field (cathodic bias, 25 V DC). Density of mushroom-like NS with applied electric field amounts to 10{sup 10} cm{sup −2}. X-ray diffraction of generated nanoparticles (NPs) shows difference in the crystallographic structure of NPs of non-stoichiometric Ti oxides generated with and without electric field. This conclusion is corroborated with the optical absorption spectroscopy of obtained colloids. Transmission Electron Microscopy of NPs also shows difference in morphology of particles produced with and without cathodic bias. The results are interpreted on the basis of instability of the melt on Ti surface in the electric field.

Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

International Nuclear Information System (INIS)

Povzner, A.A.; Volkov, A.G.

2017-01-01

Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

Energy Technology Data Exchange (ETDEWEB)

Povzner, A.A., E-mail: a.a.povzner@urfu.ru; Volkov, A.G., E-mail: agvolkov@yandex.ru

2017-06-15

Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

Voltage adjusting characteristics in terahertz transmission through Fabry-Pérot-based metamaterials

Directory of Open Access Journals (Sweden)

Jun Luo

2015-10-01

Full Text Available Metallic electric split-ring resonators (SRRs with featured size in micrometer scale, which are connected by thin metal wires, are patterned to form a periodically distributed planar array. The arrayed metallic SRRs are fabricated on an n-doped gallium arsenide (n-GaAs layer grown directly over a semi-insulating gallium arsenide (SI-GaAs wafer. The patterned metal microstructures and n-GaAs layer construct a Schottky diode, which can support an external voltage applied to modify the device properties. The developed architectures present typical functional metamaterial characters, and thus is proposed to reveal voltage adjusting characteristics in the transmission of terahertz waves at normal incidence. We also demonstrate the terahertz transmission characteristics of the voltage controlled Fabry-Pérot-based metamaterial device, which is composed of arrayed metallic SRRs. To date, many metamaterials developed in earlier works have been used to regulate the transmission amplitude or phase at specific frequencies in terahertz wavelength range, which are mainly dominated by the inductance-capacitance (LC resonance mechanism. However, in our work, the external voltage controlled metamaterial device is developed, and the extraordinary transmission regulation characteristics based on both the Fabry-Pérot (FP resonance and relatively weak surface plasmon polariton (SPP resonance in 0.025-1.5 THz range, are presented. Our research therefore shows a potential application of the dual-mode-resonance-based metamaterial for improving terahertz transmission regulation.

Pixel detector bias supply and control using embedded multicore processors

CERN Document Server

AUTHOR|(CDS)2099144; Akram Alomainy

The aim of the project is to create a software controlled, open source, low footprint and low power high voltage bias supply and current monitor for a pixelated radiation sensor. The solution is based on the LT3905 integrated circuit and the multi-core XMOS xCore 200 microcontroller and it is intended to be used in a battery powered, mobile platform for educational settings.

''SensArray'' voltage sensor analysis in an inductively coupled plasma

International Nuclear Information System (INIS)

Titus, M. J.; Hsu, C. C.; Graves, D. B.

2010-01-01

A commercially manufactured PlasmaVolt sensor wafer was studied in an inductively coupled plasma reactor in an effort to validate sensor measurements. A pure Ar plasma at various powers (25-420 W), for a range of pressures (10-80 mT), and bias voltages (0-250 V) was utilized. A numerical sheath simulation was simultaneously developed in order to interpret experimental results. It was found that PlasmaVolt sensor measurements are proportional to the rf-current through the sheath. Under conditions such that the sheath impedance is dominantly capacitive, sensor measurements follow a scaling law derived from the inhomogeneous sheath model of Lieberman and Lichtenberg, [Principles of Plasma Discharges and Materials Processing (Wiley, New York, 2005)]. Under these conditions, sensor measurements are proportional to the square root of the plasma density at the plasma-sheath interface, the one-fourth root of the electron temperature, and the one-fourth root of the rf bias voltage. When the sheath impedance becomes increasingly resistive, the sensor measurements deviate from the scaling law and tend to be directly proportional to the plasma density. The measurements and numerical sheath simulation demonstrate the scaling behavior as a function of changing sheath impedance for various plasma conditions.

Capacitively coupled radio-frequency plasmas excited by tailored voltage waveforms

International Nuclear Information System (INIS)

Lafleur, T; Delattre, P A; Booth, J P; Johnson, E V

2013-01-01

By applying certain types of ‘tailored’ voltage waveforms (TVWs) to capacitively coupled plasmas, a dc self-bias and an asymmetric plasma response can be produced, even in geometrically symmetric reactors. Furthermore, these arbitrary applied waveforms can produce a number of interesting phenomena that are not present in typical single-frequency sinusoidal discharges. This electrical asymmetry effect presents emerging possibilities for the improved control of the ion energy and ion flux in these systems; parameters of vital importance to both etching and deposition applications for materials processing. With a combined research approach utilizing both experimental measurements, and particle-in-cell simulations, we review and extend recent investigations that study a particular class of TVW. The waveforms used have a pulse-type shape and are composed of a varying number of harmonic frequencies. This allows a strong self-bias to be produced, and causes most of the applied voltage to be dropped across a single sheath. Additionally, decreasing the pulse width (by increasing the number of harmonics), allows the plasma density and ion flux to be increased. Simulation and experimental results both demonstrate that this type of waveform can be used to separately control the ion flux and ion energy, while still producing a uniform plasma over large area (50 cm diameter) rf electrodes. (paper)

A Floquet-Green's function approach to mesoscopic transport under ac bias

International Nuclear Information System (INIS)

Wu, B H; Cao, J C

2008-01-01

The current response of a mesoscopic system under a periodic ac bias is investigated by combining the Floquet theorem and the nonequilibrium Green's function method. The band structure of the lead under ac bias is fully taken into account by using appropriate self-energies in an enlarged Floquet space. Both the retarded and lesser Green's functions are obtained in the Floquet basis to account for the interference and interaction effects. In addition to the external ac bias, the time-varying Coulomb interaction, which is treated at the self-consistent Hartree-Fock level, provides another internal ac field. The numerical results show that the time-varying Coulomb field yields decoherence and reduces the ringing behavior of the current response to a harmonic bias

Frequency and voltage dependent electrical responses of poly(triarylamine thin film-based organic Schottky diode

Directory of Open Access Journals (Sweden)

Mohamad Khairul Anuar

2017-01-01

Full Text Available A metal-organic-metal (MOM type Schottky diode based on poly (triarylamine (PTAA thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f and capacitance-voltage (C-V-f characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit. Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz but decreases at high frequency (1 – 10 kHz. The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV−1cm−2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC signal.

Optoelectronic insights into the photovoltaic losses from photocurrent, voltage, and energy perspectives

Science.gov (United States)

Shang, Aixue; An, Yidan; Ma, Dong; Li, Xiaofeng

2017-08-01

Photocurrent and voltage losses are the fundamental limitations for improving the efficiency of photovoltaic devices. It is indeed that a comprehensive and quantitative differentiation of the performance degradation in solar cells will promote the understanding of photovoltaic physics as well as provide a useful guidance to design highly-efficient and cost-effective solar cells. Based on optoelectronic simulation that addresses electromagnetic and carrier-transport responses in a coupled finite-element method, we report a detailed quantitative analysis of photocurrent and voltage losses in solar cells. We not only concentrate on the wavelength-dependent photocurrent loss, but also quantify the variations of photocurrent and operating voltage under different forward electrical biases. Further, the device output power and power losses due to carrier recombination, thermalization, Joule heat, and Peltier heat are studied through the optoelectronic simulation. The deep insight into the gains and losses of the photocurrent, voltage, and energy will contribute to the accurate clarifications of the performance degradation of photovoltaic devices, enabling a better control of the photovoltaic behaviors for high performance.

Control of Compact-Toroid Characteristics by External Copper Shell

Science.gov (United States)

Matsumoto, T.; Sekiguchi, J.; Asai, T.; Gota, H.; Roche, T.; Allfrey, I.; Cordero, M.; Garate, E.; Kinley, J.; Valentine, T.; Waggoner, W.; the TAE Team

2015-11-01

A collaborative research project by Tri Alpha Energy and Nihon University has been conducted for several years, which led to the development of a new compact toroid (CT) injector for efficient FRC particle refueling in the C-2U experiment. The CT is formed by a magnetized coaxial plasma gun (MCPG), consisting of coaxial cylindrical electrodes. In CT formation via MCPG, the magnetic helicity content of the generated CT is one of the critical parameters. A bias coil is inserted into the inner electrode to generate a poloidal flux. The resultant bias magnetic field is spread out of MCPG with time due to its low-frequency bias current. To obtain a more effectively distributed bias magnetic field as well as to improve the voltage breakdown between electrodes, the MCPG incorporates a novel ~ 1 mm thick copper shell mounted outside of the outer electrode. This allows for reliable and controlled operation and more robust CT generation. A detailed discussion of the copper shell and experimental test results will be presented.

External validity of sentiment mining reports: Can current methods identify demographic biases, event biases, and manipulation of reviews?

NARCIS (Netherlands)

Wijnhoven, Alphonsus B.J.M.; Bloemen, Oscar

2014-01-01

Many publications in sentiment mining provide new techniques for improved accuracy in extracting features and corresponding sentiments in texts. For the external validity of these sentiment reports, i.e., the applicability of the results to target audiences, it is important to well analyze data of

Electronic properties of a biased graphene bilayer

International Nuclear Information System (INIS)

Castro, Eduardo V; Lopes dos Santos, J M B; Novoselov, K S; Morozov, S V; Geim, A K; Peres, N M R; Nilsson, Johan; Castro Neto, A H; Guinea, F

2010-01-01

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system-a biased bilayer. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its four-band and two-band continuum approximations, and the four-band model is shown to always be a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, made out of either SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point for understanding the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, such as the second-nearest-neighbour hopping energies t' (in-plane) and γ 4 (inter-layer), and the on-site energy Δ.

High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

Science.gov (United States)

Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

2016-02-01

The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

Interpretation bias towards vague faces in individuals with paranoid personality disorder traits

OpenAIRE

Mohsen Doustkam; Sepideh Pourheidari; Ahmad Mansouri

2017-01-01

Introduction: According to the social cognitive theories, information processing biases can play an important role in social perception, interpretation of interpersonal relationships, and social interactions. These theories along with cognitive theories emphasize on information processing i.e. the way in which people perceive and interpret external stimuli in different ways. Therefore, the purpose of this study was to investigate interpretation bias towards vague faces in individuals with par...

Efficiency enhancement using voltage biasing for ferroelectric polarization in dye-sensitized solar cells

Science.gov (United States)

Kim, Sangmo; Song, Myoung Geun; Bark, Chung Wung

2018-01-01

Dye-sensitized solar cells (DSSCs) are one of the most promising third generation solar cells that have been extensively researched over the past decade as alternative to silicon-based solar cells, due to their low production cost and high energy-conversion efficiency. In general, a DSSC consists of a transparent electrode, a counter electrode, and an electrolyte such as dye. To achieve high power-conversion efficiency in cells, many research groups have focused their efforts on developing efficient dyes for liquid electrolytes. In this work, we report on the photovoltaic properties of DSSCs fabricated using a mixture of TiO2 with nanosized Fe-doped bismuth lanthanum titanate (nFe-BLT) powder). Firstly, nFe-BLT powders were prepared using a high-energy ball milling process and then, TiO2 and nFe-BLT powders were stoichiometrically blended. Direct current (DC) bias of 20 MV/m was applied to lab-made DSSCs. With the optimal concentration of nFe-BLT doped in the electrode, their light-to-electricity conversion efficiency could be improved by ∼64% compared with DSSCs where no DC bias was applied.

Improvements in the bias illumination stability of amorphous InGaZnO thin-film transistors by using thermal treatments

International Nuclear Information System (INIS)

Kim, Woo-Byung; Ryu, Sang Ouk; Lee, Dong-Keun

2014-01-01

The a-IGZO deposited by using the rf sputtering method features a conductive or an insulator characteristic based on amount of oxygen. We demonstrated that a post-treatment affects the resistance patterns of particular-sized InGaZnO(IGZO) thin films in a-IGZO thin-film transistors (TFTs). Post-annealing shifted the driving voltage of a-IGZO TFT to positive or negative values, depending on the annealing temperatures. Post-annealing may introduce oxygen vacancies or desorbed oxygen in the IGZO thin film. The changed driving voltage of IGZO TFTs coincides with the shift of the resistance pattern of IGZO. The fabricated a-IGZO TFTs exhibited a field effect mobility of 6.2 cm 2 /Vs, an excellent subthreshold gate swing of 0.32 V/decade, and a high I on/off ratio of > 10 9 . Under positive bias illumination stress (PBIS) and negative bias illumination stress (NBIS), after 3,600 seconds, the device threshold voltage shifted about 0.2 V and 0.3 V, respectively.

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

Science.gov (United States)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

2017-09-01

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.

Transient stability of DFIG wind turbines at an external short-circuit fault

DEFF Research Database (Denmark)

Sun, Tao; Chen, Zhe; Blaabjerg, Frede

2005-01-01

The fast development of wind power generation brings new requirements for wind turbine integration into the network. After clearance of an external short-circuit fault, gridconnected wind turbines should restore their normal operation without power loss caused by disconnections. This article...... are described in detail. The transient process of grid-connected wind turbines with DFIGs at an external shortcircuit fault is analysed, and in critical post-fault situations a measure is proposed for the voltage recovery of DFIG wind turbines after fault clearance. Simulation results demonstrate...... that in uncritical post-fault situations the control schemes are able to restore the wind turbine's normal operation without disconnections.lt is also proved that the proposed measure is effective in re-establishing the voltage at the wind turbine terminal in critical post-fault situations....

Large self-biased and multi-peak magnetoelectric coupling in transducer of Pb(Zr,Ti)O3 plates and H-type magnetization-graded ferromagnetic fork

Science.gov (United States)

Shen, Yongchun; Ling, Zhihao; Lu, Caijiang

2015-12-01

This paper develops a self-biased magnetoelectric (ME) composite Metglas/H-type-FeNi/PZT (MHFP) of H-type magnetization-graded Metglas/H-type-FeNi fork and piezoelectric Pb(Zr,Ti)O3 (PZT) plate. By using the magnetization-graded magnetostrictive layer and symmetrical H-type structure, giant self-biased ME coupling and multi-peak phenomenon are observed. The zero-biased ME voltage coefficient of MHFP composite reaches ˜63.8 V/cm Oe, which is ˜37.5 times higher than that of traditional FeNi/PZT laminate. The output ME voltage has a good near linear relation with Hac and is determined to be ˜5.1 V/Oe and ˜10.6 mV/Oe at ˜65 kHz and 1 kHz, respectively. These indicate that the proposed composite show promising applications for ME transducers and high-sensitivity self-biased magnetic sensors.

Recording membrane potential changes through photoacoustic voltage sensitive dye

Science.gov (United States)

Zhang, Haichong K.; Kang, Jeeun; Yan, Ping; Abou, Diane S.; Le, Hanh N. D.; Thorek, Daniel L. J.; Kang, Jin U.; Gjedde, Albert; Rahmim, Arman; Wong, Dean F.; Loew, Leslie M.; Boctor, Emad M.

2017-03-01

Monitoring of the membrane potential is possible using voltage sensitive dyes (VSD), where fluorescence intensity changes in response to neuronal electrical activity. However, fluorescence imaging is limited by depth of penetration and high scattering losses, which leads to low sensitivity in vivo systems for external detection. In contrast, photoacoustic (PA) imaging, an emerging modality, is capable of deep tissue, noninvasive imaging by combining near infrared light excitation and ultrasound detection. In this work, we develop the theoretical concept whereby the voltage-dependent quenching of dye fluorescence leads to a reciprocal enhancement of PA intensity. Based on this concept, we synthesized a novel near infrared photoacoustic VSD (PA-VSD) whose PA intensity change is sensitive to membrane potential. In the polarized state, this cyanine-based probe enhances PA intensity while decreasing fluorescence output in a lipid vesicle membrane model. With a 3-9 μM VSD concentration, we measured a PA signal increase in the range of 5.3 % to 18.1 %, and observed a corresponding signal reduction in fluorescence emission of 30.0 % to 48.7 %. A theoretical model successfully accounts for how the experimental PA intensity change depends on fluorescence and absorbance properties of the dye. These results not only demonstrate the voltage sensing capability of the dye, but also indicate the necessity of considering both fluorescence and absorbance spectral sensitivities in order to optimize the characteristics of improved photoacoustic probes. Together, our results demonstrate photoacoustic sensing as a potential new modality for sub-second recording and external imaging of electrophysiological and neurochemical events in the brain.

Moderately nonlinear diffuse-charge dynamics under an ac voltage.

Science.gov (United States)

Stout, Robert F; Khair, Aditya S

2015-09-01

The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of V_{o}/(k_{B}T/e), where V_{o} is the amplitude of the driving voltage and k_{B}T/e is the thermal voltage with k_{B} as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D/λ_{D}L, where D is the ion diffusivity, λ_{D} is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O(V_{o}^{3}) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in V_{o}. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing V_{o}. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

Moderately nonlinear diffuse-charge dynamics under an ac voltage

Science.gov (United States)

Stout, Robert F.; Khair, Aditya S.

2015-09-01

The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of Vo/(kBT /e ) , where Vo is the amplitude of the driving voltage and kBT /e is the thermal voltage with kB as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D /λDL , where D is the ion diffusivity, λD is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O (Vo3) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in Vo. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing Vo. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics

Science.gov (United States)

Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.

2017-12-01

We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7-δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

Possible effects of external electrical fields on the corrosion of copper in bentonite

Energy Technology Data Exchange (ETDEWEB)

Taxen, Claes (Swerea KIMAB (Sweden))

2011-12-15

External potentials that develop across a repository may interact with the copper canister. A study was undertaken to investigate the potential corrosion effects of voltage differences in a repository. A set of experiments was performed to study the tendency of copper in bentonite to corrode under influence of an externally applied electrical field. A model study was made to estimate possible corrosion effects of an external electrical field on a full-scale canister in the KBS-3 concept. The interaction between the repository represented by a copper canister in bentonite, and an external electrical field is illustrated with an example

Voltage control of magnetic monopoles in artificial spin ice

Science.gov (United States)

Chavez, Andres C.; Barra, Anthony; Carman, Gregory P.

2018-06-01

Current research on artificial spin ice (ASI) systems has revealed unique hysteretic memory effects and mobile quasi-particle monopoles controlled by externally applied magnetic fields. Here, we numerically demonstrate a strain-mediated multiferroic approach to locally control the ASI monopoles. The magnetization of individual lattice elements is controlled by applying voltage pulses to the piezoelectric layer resulting in strain-induced magnetic precession timed for 180° reorientation. The model demonstrates localized voltage control to move the magnetic monopoles across lattice sites, in CoFeB, Ni, and FeGa based ASI’s. The switching is achieved at frequencies near ferromagnetic resonance and requires energies below 620 aJ. The results demonstrate that ASI monopoles can be efficiently and locally controlled with a strain-mediated multiferroic approach.

Low noise constant current source for bias dependent noise measurements

International Nuclear Information System (INIS)

Talukdar, D.; Bose, Suvendu; Bardhan, K. K.; Chakraborty, R. K.

2011-01-01

A low noise constant current source used for measuring the 1/f noise in disordered systems in ohmic as well as nonohmic regime is described. The source can supply low noise constant current starting from as low as 1 μA to a few tens of milliampere with a high voltage compliance limit of around 20 V. The constant current source has several stages, which can work in a standalone manner or together to supply the desired value of load current. The noise contributed by the current source is very low in the entire current range. The fabrication of a low noise voltage preamplifier modified for bias dependent noise measurements and based on the existing design available in the MAT04 data sheet is also described.

Effect of applied bias voltage on corrosion-resistance for TiC{sub 1-x}N{sub x} and Ti{sub 1-x}Nb{sub x}C{sub 1-y}N{sub y} coatings

Energy Technology Data Exchange (ETDEWEB)

Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Amaya, C. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Laboratorio de Recubrimientos Duros DT-ASTIN SENA, Cali (Colombia); Yate, L. [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Aperador, W.; Zambrano, G.; Gomez, M.E. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Alvarado-Rivera, J.; Munoz-Saldana, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro (Mexico); Prieto, P. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Centro de Excelencia en Nuevos Materiales, Calle 13 100-00 Edificio 320, espacio 1026, Cali (Colombia)

2010-02-15

Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and 'impurities' of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

Science.gov (United States)

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-11-17

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

High-power high-voltage pulse generator for supplying electrostatic precipitators of dust

International Nuclear Information System (INIS)

Radu, A.; Martin, D.

1992-01-01

The study and development of an experimental high voltage generator specialized in the supply of electrostatic precipitators are presented. The main parameters of the pulse generator are: U = -30 kV, I = 8.8 A, τ = 120μs, f r = 150 Hz. The pulse generator was tested on a laboratory electrostatic precipitator with nominal capacitance C = 25 nF, biased at -40 kV by means of a separate high voltage rectifier. The experimental results will be used for the creation of a more powerful pulse generator, a prototype for the supply of a real industrial electrostatic precipitator: U = -50 kV, I = 313 A, τ = 100μs, f r = 300 Hz, C = 100 nF. (Author)

Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

DEFF Research Database (Denmark)

Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

2017-01-01

This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

Noise performance in AlGaN/GaN HEMTs under high drain bias

International Nuclear Information System (INIS)

Pang Lei; Pu Yan; Lin Xinyu; Wang Liang; Liu Jian

2009-01-01

The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias. (semiconductor devices)

Biased HiPIMS technology for superconducting rf accelerating cavities coating

CERN Document Server

G. Rosaz, G.; Sonato, D.; Calatroni, S.; Ehiasarian, A.; Junginger, T.; Taborelli, M.

2016-01-01

In the last few years the interest of the thin film science and technology community on High Impulse Power Magnetron Sputtering (HIPIMS) coatings has steadily increased. HIPIMS literature shows that better thin film morphology, denser and smoother films can be achieved when compared with standard dc Magnetron Sputtering (dcMS) coating technology. Furthermore the capability of HIPIMS to produce a high quantity of ionized species can allow conformal coatings also for complex geometries. CERN already studied the possibility to use such a coating method for SRF accelerating cavities. Results are promising but not better from a RF point of view than dcMS coatings. Thanks to these results the next step is to go towards a biased HiPIMS approach. However the geometry of the cavities leads to complex changes in the coating setup in order to apply a bias voltage. Coating system tweaking and first superconducting properties of biased samples are presented.

On the estimation of bias in post-closure performance assessment of underground radioactive waste disposal

International Nuclear Information System (INIS)

Thompson, B.G.J.; Gralewski, Z.A.; Grindrod, P.

1995-01-01

This paper proposes a systematic method for recording and evaluating bias in performance assessments for underground radioactive waste disposal facilities. The bias estimation approach comprises three principal components: (1) creation of a relational database containing historical assumptions and decisions made during the assessment, (2) investigation of the impact of some identified sources of internal bias through alternative assessment calculations, and (3) investigation of the impact of some identified sources of external bias by estimating degrees of belief probability. Bias corrections may help avoid unnecessary concerns by explaining and scoping the impacts of principal differences without the need to undertake additional site investigation, research, and performance analysis

Low-bias negative differential conductance controlled by electrode separation

International Nuclear Information System (INIS)

Yi Xiao-Hua; Liu Ran; Bi Jun-Jie; Jiao Yang; Wang Chuan-Kui; Li Zong-Liang

2016-01-01

The electronic transport properties of a single thiolated arylethynylene molecule with 9,10-dihydroanthracene core, denoted as TADHA, is studied by using non-equilibrium Green’s function formalism combined with ab initio calculations. The numerical results show that the TADHA molecule exhibits excellent negative differential conductance (NDC) behavior at lower bias regime as probed experimentally. The NDC behavior of TADHA molecule originates from the Stark effect of the applied bias voltage, by which the highest occupied molecular orbital (HOMO) and the HOMO-1 are pulled apart and become localized. The NDC behavior of TADHA molecular system is tunable by changing the electrode distance. Shortening the electrode separation can enhance the NDC effect which is attributed to the possible increase of coupling between the two branches of TADHA molecule. (paper)

Bias against research on gender bias.

Science.gov (United States)

Cislak, Aleksandra; Formanowicz, Magdalena; Saguy, Tamar

2018-01-01

The bias against women in academia is a documented phenomenon that has had detrimental consequences, not only for women, but also for the quality of science. First, gender bias in academia affects female scientists, resulting in their underrepresentation in academic institutions, particularly in higher ranks. The second type of gender bias in science relates to some findings applying only to male participants, which produces biased knowledge. Here, we identify a third potentially powerful source of gender bias in academia: the bias against research on gender bias. In a bibliometric investigation covering a broad range of social sciences, we analyzed published articles on gender bias and race bias and established that articles on gender bias are funded less often and published in journals with a lower Impact Factor than articles on comparable instances of social discrimination. This result suggests the possibility of an underappreciation of the phenomenon of gender bias and related research within the academic community. Addressing this meta-bias is crucial for the further examination of gender inequality, which severely affects many women across the world.

Ion acceleration in a helicon source due to the self-bias effect

Energy Technology Data Exchange (ETDEWEB)

Wiebold, Matt; Sung, Yung-Ta; Scharer, John E. [University of Wisconsin-Madison, Electrical and Computer Engineering, Madison, Wisconsin 53706 (United States)

2012-05-15

Time-averaged plasma potential differences up to 165 V over several hundred Debye lengths are observed in low pressure (p{sub n} < 1 mTorr) expanding argon plasmas in the Madison Helicon eXperiment (MadHeX). The potential gradient leads to ion acceleration greater than that predicted by ambipolar expansion, exceeding E{sub i} Almost-Equal-To 7 kT{sub e} in some cases. RF power up to 500 W at 13.56 MHz is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field, adjustable up to 1 kG. A retarding potential analyzer (RPA) measures the ion energy distribution function (IEDF) and a swept emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in density as RF power is increased. In the capacitive (E) mode, large fluctuations of the plasma potential (V{sub p-p} Greater-Than-Or-Equivalent-To 140V, V{sub p-p}/V{sub p} Almost-Equal-To 150%) exist at the RF frequency and its harmonics. The more mobile electrons can easily respond to RF-timescale gradients in the plasma potential whereas the inertially constrained ions cannot, leading to an initial flux imbalance and formation of a self-bias voltage between the source and expansion chambers. In the capacitive mode, the ion acceleration is not well described by an ambipolar relation, while in the inductive and helicon modes the ion acceleration more closely follows an ambipolar relation. The scaling of the potential gradient with the argon flow rate and RF power are investigated, with the largest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees with that predicted for RF self-bias at a wall. Rapid fluctuations in the plasma potential result in a time-dependent axial electron flux that acts to 'neutralize' the accelerated ion

Impurity-induced anisotropic semiconductor-semimetal transition in monolayer biased black phosphorus

Science.gov (United States)

Bui, D. H.; Yarmohammadi, Mohsen

2018-07-01

Taking into account the electron-impurity interaction within the continuum approximation of tight-binding model, the Born approximation, and the Green's function method, the main features of anisotropic electronic phase transition are investigated in monolayer biased black phosphorus (BP). To this end, we concentrated on the disordered electronic density of states (DOS), which gives useful information for electro-optical devices. Increasing the impurity concentration in both unbiased and biased impurity-infected single-layer BP, in addition to the decrease of the band gap, independent of the direction, leads to the midgap states and an extra Van Hove singularity inside and outside of the band gap, respectively. Furthermore, strong impurity scattering potentials lead to a semiconductor-semimetal transition and one more Van Hove singularity in x-direction of unbiased BP and surprisingly, this transition does not occur in biased BP. We found that there is no phase transition in y-direction. Since real applications require structures with modulated band gaps, we have studied the influence of different bias voltages on the disordered DOS in both directions, resulting in the increase of the band gap.

Cognitive biases to healthy and unhealthy food words predict change in BMI.

Science.gov (United States)

Calitri, Raff; Pothos, Emmanuel M; Tapper, Katy; Brunstrom, Jeffrey M; Rogers, Peter J

2010-12-01

The current study explored the predictive value of cognitive biases to food cues (assessed by emotional Stroop and dot probe tasks) on weight change over a 1-year period. This was a longitudinal study with undergraduate students (N = 102) living in shared student accommodation. After controlling for the effects of variables associated with weight (e.g., physical activity, stress, restrained eating, external eating, and emotional eating), no effects of cognitive bias were found with the dot probe. However, for the emotional Stroop, cognitive bias to unhealthy foods predicted an increase in BMI whereas cognitive bias to healthy foods was associated with a decrease in BMI. Results parallel findings in substance abuse research; cognitive biases appear to predict behavior change. Accordingly, future research should consider strategies for attentional retraining, encouraging individuals to reorient attention away from unhealthy eating cues.

Induction sensor for measuring the accelerating voltage in an iron-free induction accelerator

International Nuclear Information System (INIS)

Bol'nykh, N.S.; Il'in, Yu.M.; Kostyushok, A.A.; Suvorov, V.A.

1987-01-01

An inductive sensor is described for measuring the amplitude and form of the accelerating-voltage pulse in the storage coils in a radial iron-free linear induction accelerator. The sensor does not respond to interference from external fields and does not require adjustment after calibration

Distributed Secondary Voltage and Frequency Control for Islanded Microgrids with Uncertain Communication Links

DEFF Research Database (Denmark)

Lu, Xiaoqing; Yu, Xinghuo; Lai, Jingang

2017-01-01

energy resources (DERs) in a MG to achieve the voltage/frequency restoration and active power sharing accuracy, respectively. In special, the secondary control inputs are merely updated at the end of each round of iteration, and thus each DER only needs to share information with its neighbors...... theory. The proposed controllers are implemented on local DERs, and thus no central controller is required. Moreover, the desired control objective can also be guaranteed even if all DERs are subject to internal uncertainties and external noises including initial voltage and/or frequency resetting errors...

Voltage control of a magnetization easy axis in piezoelectric/ferromagnetic hybrid films

International Nuclear Information System (INIS)

Kim, Sang-Koog; Lee, Jeong-Won; Shin, Sung-Chul; Song, Han Wook; Lee, Chang Ho; No, Kwangsoo

2003-01-01

We have established a spontaneous magnetization-axis switching in ferromagnetic films by applying a low voltage to a piezoelectric layer in a newly developed hybrid system comprised of the ferromagnetic and piezoelectric films. The magnetization easy axis along which a spontaneous magnetization is oriented, is readily switchable by a voltage without applying an external magnetic field through both the inverse magnetostrictive and piezoelectric effects of CoPd and lead-zirconate-titanate alloy films, respectively. This challenging work provides a new way into the memory writing as well as storage means of ultrahigh bit densities in nonvolatile magnetic random access memory

The ability of external immobilizers to restrict movement of the cervical spine: a systematic review

NARCIS (Netherlands)

Holla, M.; Huisman, J.M.; Verdonschot, N.; Goosen, J.; Hosman, A.J.; Hannink, G.

2016-01-01

PURPOSE: To review the ability of various types of external immobilizers to restrict cervical spine movement. METHODS: With a systematical review of original scientific articles, data on range of motion, type of used external immobilization device and risk of bias were extracted. The described

The ability of external immobilizers to restrict movement of the cervical spine: a systematic review

NARCIS (Netherlands)

Holla, M.; Huisman, J.M.; Verdonschot, Nicolaas Jacobus Joseph; Goosen, J.; Hosman, A.J.; Hannink, G.

2016-01-01

Purpose To review the ability of various types of external immobilizers to restrict cervical spine movement. Methods With a systematical review of original scientific articles, data on range of motion, type of used external immobilization device and risk of bias were extracted. The described

Intrinsic non-radiative voltage losses in fullerene-based organic solar cells

Science.gov (United States)

Benduhn, Johannes; Tvingstedt, Kristofer; Piersimoni, Fortunato; Ullbrich, Sascha; Fan, Yeli; Tropiano, Manuel; McGarry, Kathryn A.; Zeika, Olaf; Riede, Moritz K.; Douglas, Christopher J.; Barlow, Stephen; Marder, Seth R.; Neher, Dieter; Spoltore, Donato; Vandewal, Koen

2017-06-01

Organic solar cells demonstrate external quantum efficiencies and fill factors approaching those of conventional photovoltaic technologies. However, as compared with the optical gap of the absorber materials, their open-circuit voltage is much lower, largely due to the presence of significant non-radiative recombination. Here, we study a large data set of published and new material combinations and find that non-radiative voltage losses decrease with increasing charge-transfer-state energies. This observation is explained by considering non-radiative charge-transfer-state decay as electron transfer in the Marcus inverted regime, being facilitated by a common skeletal molecular vibrational mode. Our results suggest an intrinsic link between non-radiative voltage losses and electron-vibration coupling, indicating that these losses are unavoidable. Accordingly, the theoretical upper limit for the power conversion efficiency of single-junction organic solar cells would be reduced to about 25.5% and the optimal optical gap increases to 1.45-1.65 eV, that is, 0.2-0.3 eV higher than for technologies with minimized non-radiative voltage losses.

Model Predictive Voltage Control of Wind Power Plants

DEFF Research Database (Denmark)

Zhao, Haoran; Wu, Qiuwei

2018-01-01

the efficacy of the proposed WFVC, two case scenarios were designed: the wind farm is under normal operating conditions and the internal wind power fluctuation is considered; and besides internal power fluctuation, the impact of the external grid on the wind farm is considered.......This chapter proposes an autonomous wind farm voltage controller (WFVC) based on model predictive control (MPC). It also introduces the analytical expressions for the voltage sensitivity to tap positions of a transformer. The chapter then describes the discrete models for the wind turbine...... generators (WTGs) and static var compensators (SVCs)/static var generators (SVGs). Next, it describes the implementation of the on‐load tap changing (OLTC) in the MPC. Furthermore, the chapter examines the cost function as well as the constraints of the MPC‐based WFVC for both control modes. In order to test...

Evaluation of Niobium as Candidate Electrode Material for DC High Voltage Photoelectron Guns

Science.gov (United States)

BastaniNejad, M.; Mohamed, Abdullah; Elmustafa, A. A.; Adderley, P.; Clark, J.; Covert, S.; Hansknecht, J.; Hernandez-Garcia, C.; Poelker, M.; Mammei, R.;

Boolean decision problems with competing interactions on scale-free networks: Equilibrium and nonequilibrium behavior in an external bias

Science.gov (United States)

Zhu, Zheng; Andresen, Juan Carlos; Moore, M. A.; Katzgraber, Helmut G.

2014-02-01

We study the equilibrium and nonequilibrium properties of Boolean decision problems with competing interactions on scale-free networks in an external bias (magnetic field). Previous studies at zero field have shown a remarkable equilibrium stability of Boolean variables (Ising spins) with competing interactions (spin glasses) on scale-free networks. When the exponent that describes the power-law decay of the connectivity of the network is strictly larger than 3, the system undergoes a spin-glass transition. However, when the exponent is equal to or less than 3, the glass phase is stable for all temperatures. First, we perform finite-temperature Monte Carlo simulations in a field to test the robustness of the spin-glass phase and show that the system has a spin-glass phase in a field, i.e., exhibits a de Almeida-Thouless line. Furthermore, we study avalanche distributions when the system is driven by a field at zero temperature to test if the system displays self-organized criticality. Numerical results suggest that avalanches (damage) can spread across the whole system with nonzero probability when the decay exponent of the interaction degree is less than or equal to 2, i.e., that Boolean decision problems on scale-free networks with competing interactions can be fragile when not in thermal equilibrium.

Novel semiconducting boron carbide/pyridine polymers for neutron detection at zero bias

Energy Technology Data Exchange (ETDEWEB)

Echeverria, Elena; Enders, A.; Dowben, P.A. [University of Nebraska-Lincoln, Department of Physics and Astronomy, Lincoln, NE (United States); James, Robinson; Chiluwal, Umesh; Gapfizi, Richard; Tae, Jae-Do; Driver, M. Sky; Kelber, Jeffry A. [University of North Texas, Department of Chemistry, Denton, TX (United States); Pasquale, Frank L. [University of North Texas, Department of Chemistry, Denton, TX (United States); Lam Research Corporation, PECVD Business Unit, Tualatin, OR (United States); Colon Santana, Juan A. [Center for Energy Sciences Research, Lincoln, NE (United States)

2014-09-19

Thin films containing aromatic pyridine moieties bonded to boron, in the partially dehydrogenated boron-rich icosahedra (B{sub 10}C{sub 2}H{sub X}), prove to be an effective material for neutron detection applications when deposited on n-doped (100) silicon substrates. The characteristic I-V curves for the heterojunction diodes exhibit strong rectification and largely unperturbed normalized reverse bias leakage currents with increasing pyridine content. The neutron capture generated pulses from these heterojunction diodes were obtained at zero bias voltage although without the signatures of complete electron-hole collection. These results suggest that modifications to boron carbide may result in better neutron voltaic materials. (orig.)

Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

DEFF Research Database (Denmark)

Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

2013-01-01

Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

A Developmental Neuroscience Perspective on Affect-Biased Attention

Science.gov (United States)

Morales, Santiago; Fu, Xiaoxue; Pérez-Edgar, Koraly E.

2016-01-01

There is growing interest regarding the impact of affect-biased attention on psychopathology. However, most of the research to date lacks a developmental approach. In the present review, we examine the role affect-biased attention plays in shaping socioemotional trajectories within a developmental neuroscience framework. We propose that affect-biased attention, particularly if stable and entrenched, acts as a developmental tether that helps sustain early socioemotional and behavioral profiles over time, placing some individuals on maladaptive developmental trajectories. Although most of the evidence is found in the anxiety literature, we suggest that these relations may operate across multiple domains of interest, including positive affect, externalizing behaviors, drug use, and eating behaviors. We also review the general mechanisms and neural correlates of affect-biased attention, as well as the current evidence for the co-development of attention and affect. Based on the reviewed literature, we propose a model that may help us better understand the nuances of affect-biased attention across development. The model may serve as a strong foundation for ongoing attempts to identify neurocognitive mechanisms and intervene with individuals at risk. Finally, we discuss open issues for future research that may help bridge existing gaps in the literature. PMID:27606972

An externally heated copper vapour laser

International Nuclear Information System (INIS)

Rochefort, P.A.; Sopchyshyn, F.C.; Selkirk, E.B.; Green, L.W.

1993-08-01

A pulsed Copper Vapour Laser (CVL), with a nominal 6 kHz repetition rate, was designed, build, and commissioned at Chalk River laboratories. The laser was required for Resonant Ionization Mass Spectroscopy (RIMS) experiments and for projects associated with Atomic Vapour laser Isotope Separation (AVLIS) studies. For the laser to operate, copper coupons position along the length of a ceramic tube must be heated sufficiently to create an appropriate vapour pressure. The AECL CVL uses an external heater element with a unique design to raise the temperature of the tube. The Cylindrical graphite heating element is shaped to compensate for the large radiation end losses of the laser tube. The use of an external heater saves the expensive high-current-voltage switching device from heating the laser tube, as in most commercial lasers. This feature is especially important given the intermittent usage typical of experimental research. As well, the heater enables better parametric control of the laser output when studying the lasing of copper (or other) vapour. This report outlines the lasing process in copper vapour, describes in detail all three major laser sub-systems: the laser body; the laser tube heater; the high voltage pulsed discharge; and, reports parametric measurements of the individual sub-systems and the laser system as a whole. Also included are normal operating procedures to heat up, run and shut down the laser