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Sample records for external voltage bias

  1. Experimental investigation of SDBD plasma actuator driven by AC high voltage with a superimposed positive pulse bias voltage

    Science.gov (United States)

    Qi, Xiao-Hua; Yan, Hui-Jie; Yang, Liang; Hua, Yue; Ren, Chun-Sheng

    2017-08-01

    In this work, a driven voltage consisting of AC high voltage with a superimposed positive pulse bias voltage ("AC+ Positive pulse bias" voltage) is adopted to study the performance of a surface dielectric barrier discharge plasma actuator under atmospheric conditions. To compare the performance of the actuator driven by single-AC voltage and "AC+ Positive pulse bias" voltage, the actuator-induced thrust force and power consumption are measured as a function of the applied AC voltage, and the measured results indicate that the thrust force can be promoted significantly after superimposing the positive pulse bias voltage. The physical mechanism behind the thrust force changes is analyzed by measuring the optical properties, electrical characteristics, and surface potential distribution. Experimental results indicate that the glow-like discharge in the AC voltage half-cycle, next to the cycle where a bias voltage pulse has been applied, is enhanced after applying the positive pulse bias voltage, and this perhaps is the main reason for the thrust force increase. Moreover, surface potential measurement results reveal that the spatial electric field formed by the surface charge accumulation after positive pulse discharge can significantly affect the applied external electric field, and this perhaps can be responsible for the experimental phenomenon that the decrease of thrust force is delayed by pulse bias voltage action after the filament discharge occurs in the glow-like discharge region. The schlieren images further verify that the actuator-induced airflow velocity increases with the positive pulse voltage.

  2. Perspectives of voltage control for magnetic exchange bias in multiferroic heterostructures

    Science.gov (United States)

    Yang, Q.; Zhou, Z.; Sun, N. X.; Liu, M.

    2017-04-01

    Exchange bias, as an internal magnetic bias induced by a ferromagnetic-antiferromagnetic exchange coupling, is extremely important in many magnetic applications such as memories, sensors and other devices. Voltage control of exchange bias in multiferroics provides an energy-efficient way to achieve a rapidly 180° deterministic switching of magnetization, which has been considered as a key challenge in realizing next generation of fast, compact and ultra-low power magnetoelectric memories and sensors. Additionally, exchange bias can enhance dynamic magnetoelectric coupling strength in an external-field-free manner. In this paper, we provide a perspective on voltage control of exchange bias in different multiferroic heterostructures. Brief mechanization and related experiments are discussed as well as future trend and challenges that can be overcome by electrically tuning of exchange bias in state-of-the-art magnetoelectric devices.

  3. Optimal condition of memristance enhancement circuit using external voltage source

    Directory of Open Access Journals (Sweden)

    Hiroya Tanaka

    2014-05-01

    Full Text Available Memristor provides nonlinear response in the current-voltage characteristic and the memristance is modulated using an external voltage source. We point out by solving nonlinear equations that an optimal condition of the external voltage source exists for maximizing the memristance in such modulation scheme. We introduce a linear function to describe the nonlinear time response and derive an important design guideline; a constant ratio of the frequency to the amplitude of the external voltage source maximizes the memristance. The analysis completely accounts for the memristance behavior.

  4. Does Monetary Policy Have Expansionary Bias with External Wealth?

    OpenAIRE

    Takamatsu, Satoko

    2008-01-01

    This paper investigates how the accumulation of external wealth affects a monetary policy. We demonstrate that though an expansionary bias emerges in a monetary policy, a fiscal method can eliminate such a bias.

  5. Break Cohesion of Metal Contacts due to Voltage Bias

    Institute of Scientific and Technical Information of China (English)

    LI Yu-Xian

    2006-01-01

    @@ The instability of metal point contacts under voltage bias is calculated based on scattering theory. When the bias is applied, the transport channels will be closed and the chemical bonds will be broken, which modify the cohesive force of the point contact.

  6. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, Paul M., E-mail: paul.jordan@namlab.com; Simon, Daniel K.; Dirnstorfer, Ingo [Nanoelectronic Materials Laboratory gGmbH (NaMLab), Nöthnitzer Straße 64, 01187 Dresden (Germany); Mikolajick, Thomas [Nanoelectronic Materials Laboratory gGmbH (NaMLab), Nöthnitzer Straße 64, 01187 Dresden (Germany); Technische Universität Dresden, Institut für Halbleiter- und Mikrosystemtechnik, 01062 Dresden (Germany)

    2015-02-09

    A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

  7. Hysteresis analysis in dye-sensitized solar cells based on external bias field effects

    Science.gov (United States)

    Wu, Fan; Li, Xiaoyi; Tong, Yanhua; Zhang, Tiansheng

    2017-02-01

    The current density-voltage (J-V) hysteresis phenomenon occurs in perovskite solar cells as well as dye-sensitized solar cells (DSCs); however, it has received little attention in DSCs. We consider that the trapping-detrapping-induced variation of the charge collection efficiency might cause J-V hysteresis. Therefore, we conduct a systematic study on the influence of an external bias field during and before J-V measurements in typical DSCs. We find that the J-V performance of DSCs significantly depends on the scan bias direction and the external bias field before and during measurements. Our results indicate that the external-bias-field-modulated charge injection, trapping-detrapping, and accumulation processes in DSCs are possible causes for the anomalous J-V behavior.

  8. Photoresponse of resonant tunneling diode photodetectors as a function of bias voltage

    Science.gov (United States)

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the photocurrent-voltage relation of resonant tunneling diode (RTD) photodetectors by means of electrooptical transport measurements. The investigated RTDs are based on an Al0.6Ga0.4As/GaAs double barrier resonant tunneling structure (RTS) with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ= 1.3 μm. Under illumination, photogenerated holes can be captured for accumulation in vicinity to the RTS and modulate the resonant tunneling current that is highly sensitive to changes in the local electrostatic potential. The resulting photocurrent-voltage relation is found to be a nonlinear function of the applied bias voltage, and governed by the interplay of the electronic transport properties of the RTS and the dynamics of photogenerated holes. Time-resolved photocurrent measurements were employed to analyze the dynamics of photogenerated holes. From the photocurrent-time traces the quantum-efficiency and mean lifetime of photogenerated holes can be separately determined. We found that the photoresponse is suppressed by a low quantum efficiency for bias voltages below V 1 V, the built-in field is compensated by the external bias, and η(V) takes on a constant value. In this regime, the RTD photoresponse is mainly determined by the lifetime of holes accumulated at the RTS. The lifetime is limited by thermionic carrier escape and was found to decrease exponentially with the applied bias voltage.

  9. Low input voltage converter/regulator minimizes external disturbances

    Science.gov (United States)

    1966-01-01

    Low-input voltage converter/regulator constructed in a coaxial configuration minimizes external magnetic field disturbance, suppresses radio noise interference, and provides excellent heat transfer from power transistors. It converts the output of fuel and solar cells, thermionic diodes, thermoelectric generators, and electrochemical batteries to a 28 V dc output.

  10. Voltage biased Varistor-Transistor Hybrid Devices: Properties and Applications

    Directory of Open Access Journals (Sweden)

    Raghvendra K Pandey

    2015-08-01

    Full Text Available The paper describes the properties and potential applications of a novel hybrid varistor device originating from biased voltage induced modified nonlinear current-voltage (I-V characteristics. Single crystal of an oxide semiconductor in the family of iron-titanates with the chemical formula of Fe2TiO5 (pseudobrookite has been used as substrate for the varistor. The modifications of the varistor characteristics are achieved by superimposition of a bias voltage in the current path of the varistor. These altered I-V characteristics, when analyzed, reveal the existence of embedded transistors coexisting with the varistor. These transistors exhibit mutual conductance, signal amplification and electronic switching which are the defining signatures of a typical transistor. The tuned varistors also acquire the properties of signal amplification and mutual conductance which expand the range of applications for a varistor beyond its traditional use as circuit protector. Both tuned varistors and the embedded transistors have attributes which make them suitable for many applications in electronics including at high temperatures and for radiation dominated environments such as space.

  11. Investigating the effect of externalizing perspectives on cognitives biases

    DEFF Research Database (Denmark)

    Madsen, Fredrik Huitfeldt; Hicks, David L., David

    2007-01-01

    the number of attacks that “get through”. There are many subproblems of this main problem, one of which is that relative quality of the intelligence analysis is too low [39, We observe that the analysts suffer from cognitive biases, and we assume that this is one of the reasons behind “low” quality...... of intelligence analysis. We propose that complexity of maintaining multiple different perspectives the same data is one of the reasons for this. We further propose that a tool that facillitates the externalization multiple perspectives would reduce these biases and hence increase the overall quality...

  12. Energy-aware Supply Voltage and Body Biasing Voltage Scheduling Algorithm for Real-time Distributed Systems

    Institute of Scientific and Technical Information of China (English)

    SUYajuan; WEIShaojun

    2005-01-01

    Technique of energy minimization by combining Dynamic voltage scheduling (DVS) and Adaptive body biasing voltage (ABB) method for distributed realtime system at design level is proposed. First, a simplified energy optimizing model is illustrated where the supply voltage or body biasing voltage is kept as constant according to each separated frequency region, thus calculation of exceeding equation is avoided. Divergence of simplified and analytic model within 5% indicates the accuracy of this model. Based on it, the proposed approach named LEVVS (Low energy supply voltage and body biasing voltage scheduling algorithm) explores space of minimizing energy consumption by finding optimal trade-off between dynamic and static energy. The corresponding optimal supply voltage and body biasing voltage are determined by an iterative method in which the supply voltage and body biasing voltage of tasks are adjusted according to the value of energy latency differential coefficient of each task and slack time distribution of the system. Experiments show that using LEVVS approach, 51% more average energy reduction can be obtained than employing DVS method alone. Furthermore the effects of switch capacitance and global slack on the energy saving efficiency of LEVVS are investigated. The smaller the global slack or average switch capacitance is, the more the energy saving of LEVVS compared with DVS is.

  13. Interface circuit with adjustable bias voltage enabling maximum power point tracking of capacitive energy harvesting devices

    Science.gov (United States)

    Wei, J.; Lefeuvre, E.; Mathias, H.; Costa, F.

    2016-12-01

    The operation analysis of a new interface circuit for electrostatic vibration energy harvesting with adjustable bias voltage is carried out in this paper. Two configurations determined by the open or closed states of an electronic switch are examined. The increase of the voltage across a biasing capacitor, occurring when the switch is open, is proved theoretically and experimentally. With the decrease of this biasing voltage which occurs naturally when the switch is closed due to imperfections of the circuit, the bias voltage can be maintained close to a target value by appropriate ON and OFF control of the switch. As the energy converted by the variable capacitor on each cycle depends on the bias voltage, this energy can be therefore accurately controlled. This feature opens up promising perspectives for optimization the power harvested by electrostatic devices. Simulation results with and without electromechanical coupling effect are presented. In experimental tests, a simple switch control enabling to stabilize the bias voltage is described.

  14. Structural transformation of Ge dimers on Ge(001) surfaces induced by bias voltage

    Institute of Scientific and Technical Information of China (English)

    Qin Zhi-Hui; Shi Dong-Xia; Gao Hong-Jun

    2008-01-01

    Scanning tunnelling microscopy is utilized to investigate the local bias voltage tunnelling dependent transformation between (2×1) and c(4×2) structures on Ge(001) surfaces, which is reversibly observed at room temperature and a critical bias voltage of -0.80 V. Similar transformation is also found on an epitaxial Ge islands but at a slightly different critical bias voltage of -1.00V. It is found that the interaction between the topmost atoms on the STM tip and the atoms of the dimers, and the pinning effect induced by Sb atoms, the vacancies or the epitaxial clusters, can drive the structural transformation at the critical bias voltage.

  15. Characteristics of Single Cathode Cascaded Bias Voltage Arc Plasma

    Science.gov (United States)

    Ou, Wei; Deng, Baiquan; Zeng, Xianjun; Gou, Fujun; Xue, Xiaoyan; Zhang, Weiwei; Cao, Xiaogang; Yang, Dangxiao; Cao, Zhi

    2016-06-01

    A single cathode with a cascaded bias voltage arc plasma source has been developed with a new quartz cathode chamber, instead of the previous copper chambers, to provide better diagnostic observation and access to the plasma optical emission. The cathode chamber cooling scheme is also modified to be naturally cooled only by light emission without cooling water to improve the optical thin performance in the optical path. A single-parameter physical model has been developed to describe the power dissipated in the cascaded bias voltage arc discharge argon plasmas, which have been investigated by utilizing optical emission spectroscopy (OES) and Langmuir probe. In the experiments, discharge currents from 50 A to 100 A, argon flow rates from 800 sccm to 2000 sccm and magnetic fields of 0.1 T and 0.2 T were chosen. The results show: (a) the relationship between the averaged resistivity and the averaged current density exhibits an empirical scaling law as \\barη \\propto \\bar {j}-0.63369 and the power dissipated in the arc has a strong relation with the filling factor; (b) through the quartz, the argon ions optical emission lines have been easily observed and are dominating with wavelengths between 340 nm and 520 nm, which are the emissions of Ar+-434.81 nm and Ar+-442.60 nm line, and the intensities are increasing with the arc current and decreasing with the inlet argon flow rate; and (c) the electron density and temperature can reach 2.0 × 1019 m-3 and 0.48 eV, respectively, under the conditions of an arc current of 90 A and a magnetic field of 0.2 T. The half-width of the ne radial profile is approximatively equal to a few Larmor radii of electrons and can be regarded as the diameter of the plasma jet in the experiments. supported by the International Thermonuclear Experimental Reactor (ITER) Program Special of Ministry of Science and Technology (No. 2013GB114003), and National Natural Science Foundation of China (Nos. 11275135, 11475122)

  16. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2016-08-01

    Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  17. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

    Science.gov (United States)

    Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

    2016-08-10

    This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  18. Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage

    Institute of Scientific and Technical Information of China (English)

    MA Ying; WANG Lin-jun; LIU Jian-min; SU Qing-feng; XU Run; PENG Hong-yan; SHI Wei-min; XIA Yi-ben

    2006-01-01

    The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology,X-ray diffraction (XRD),RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth,making the growth of the high quality diamond film easier and cheaper than using other methods.

  19. Tuning the Effective Anisotropy in a Voltage-Susceptible Exchange-Bias Heterosystem

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    2017-03-01

    Voltage- and temperature-tuned ferromagnetic hysteresis is investigated by a superconducting quantum-interference device and Kerr magnetometry in a thin-film heterostructure of a perpendicular anisotropic Co/Pd ferromagnet exchange coupled to the magnetoelectric antiferromagnet Cr2O3 . An abrupt disappearance of exchange bias with a simultaneous more than twofold increase in coercivity is observed and interpreted as a competition between the effective anisotropy of Cr2O3 and the exchange-coupling energy between boundary magnetization and the adjacent ferromagnet. The effective anisotropy energy is given by the intrinsic anisotropy energy density multiplied by the effective volume separated from the bulk through a horizontal antiferromagnetic domain boundary. Kerr measurements show that the anisotropy of the interfacial Cr2O3 can be tuned isothermally and in the absence of an external magnetic field by application of an electric field. A generalized Meiklejohn-Bean model accounts for the change in exchange bias and coercivity as well as the asymmetric evolution of the hysteresis loop. In support of this model, the reversal of the boundary magnetization is experimentally confirmed as a contribution to the magnetic hysteresis loop.

  20. Bistability in voltage-biased normal-metal/insulator/superconductor/insulator/normal-metal structures

    NARCIS (Netherlands)

    Snyman, I.; Nazarov, Y.V.

    2009-01-01

    As a generic example of a voltage-driven superconducting structure, we study a short superconductor connected to normal leads by means of low transparency tunnel junctions with a voltage bias V between the leads. The superconducting order parameter Δ is to be determined self-consistently. We study t

  1. Study of the Dependence on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    Science.gov (United States)

    Bandler, Simon

    2011-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in the AC bias configuration. For x-ray photons at 6keV the AC biased pixel shows a best energy resolution of 3.7eV, which is about a factor of 2 worse than the energy resolution observed in identical DC-biased pixels. To better understand the reasons of this discrepancy, we investigated the detector performance as a function of temperature, bias working point and applied magnetic field. A strong periodic dependence of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recent weak-link behaviour observed inTES microcalorimeters.

  2. Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

    Science.gov (United States)

    Green, Ron; Lelis, Aivars; Habersat, Daniel

    2016-04-01

    This work reports on three important aspects of threshold-voltage instability in SiC power MOSFETs: (1) the threshold-voltage bias-temperature instability observed in commercial devices from two leading manufacturers, (2) a summary of the basic mechanisms driving this instability, and (3) the need for an improved test method for evaluating these devices. Even under significant overstress conditions, no negative threshold-voltage shift was observed in the most-recent-vintage commercial devices from one of the manufacturers during a -15 V, 175 °C negative-bias temperature stress lasting 120 h.

  3. Current-Voltage Characteristics of Molecular Devices at Low Bias

    Institute of Scientific and Technical Information of China (English)

    LIAO Yun-Xing; CHEN Hao; R.Note; H.Mizuseki; Y.Kawazoe

    2004-01-01

    We use density functional theory and the Green function formalism with charge energy effect included in the self-consistent calculation of the Ⅰ- Ⅴ characteristics of a single benzene ring with an appendage of cf3, and identify some interesting properties of the Ⅰ-Ⅴ characteristics at low bias. The molecule picks up a fractional charge at zero bias, then the additional fractional charge produces a barrier on the junction of the molecule and contacts to perturb current flow on the molecule. This phenomenon may be useful for the design of future molecular devices.

  4. Effects of DC bias voltages on the RF-excited plasma-tissue interaction

    Science.gov (United States)

    Yang, Aijun; Liu, Dingxin; Wang, Xiaohua; Li, Jiafeng; Chen, Chen; Rong, Mingzhe; Kong, Michael G.

    2016-10-01

    We present in this study how DC bias voltage impacts on the fluxes of reactive species on the skin tissue by means of a plasma-tissue interaction model. The DC bias voltage inputs less than 2% of the total discharge power, and hence it has little influence on the whole plasma characteritics including the volume-averaged densities of reactive species and the heating effect. However, it pushes the plasma bulk towards the skin surface, which significantly changes the local plasma characteristics in the vicinity of the skin surface, and in consequence remarkably enhances the flux densities of reactive species on the skin tissue. With the consideration of plasma dosage and heat damage on the skin tissue, DC bias voltage is a better approach compared with the common approach of increasing the plasma power. Since the DC voltage is easy to apply on the human body, it is a promising approach for use in clincial applications.

  5. Output pressure and harmonic characteristics of a CMUT as function of bias and excitation voltage

    DEFF Research Database (Denmark)

    Lei, Anders; Diederichsen, Søren Elmin; Hansen, Sebastian Molbech

    2015-01-01

    The large bandwidth makes CMUT based transducers interesting for both conventional and harmonic imaging. The inherent nonlinear behavior of the CMUT, however, poses an issue for harmonic imaging as it is difficult to dissociate the harmonics generated in the tissue from the harmonic content...... of the transmitted signal. The generation of intrinsic harmonics by the CMUT can be minimized by decreasing the excitation signal. This, however, leads to lower fundamental pressure which limits the desired generation of harmonics in the medium. This work examines the output pressure and harmonic characteristics...... of a CMUT as function of bias and excitation voltage. The harmonic to fundamental ratio of the surface pressures declines for decreasing excitation voltage and increasing bias voltage. The ratio, however, becomes unchanged for bias levels close to the pull-in voltage. The harmonic limitations of the CMUT...

  6. An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2011-01-01

    Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

  7. Analysis of bias voltage scan data recorded with hybrid Timepix1 silicon pixel assemblies at the DESY testbeam

    CERN Document Server

    Maimon, Shir

    2014-01-01

    This report will present results from the analysis of bias voltage scans in Timepix1 testbeam data. Three assemblies of varying sensor thickness were used to collect data. The effect of the bias voltage on charge sharing, in particular cluster size, was investigated and found to have a significant impact. The effect of the bias voltage on energy collection was also studied, leading to estimates for the depletion voltage, donor concentration, mobility and resistivity of each assembly. Finally, the effect of the bias voltage on the two-hit cluster resolution and detection efficiency was investigated. This report contains extracts from a longer document (LCD-OPEN-2014-001).

  8. Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    Science.gov (United States)

    Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.; Chervenak, J.; Eckart, M.; Finkbeiner, F.; Kelley, R.; Kilbourne, C.; Porter, F.; Sadlier, J.; Smith, S.

    2012-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Delta E(sub FWHM) = 3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterized the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

  9. ZnO films deposited by optimized PLD technique with bias voltages

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, Hiroyuki; Shitara, Tamae; Komiyama, Takao; Chonan, Yasunori; Aoyama, Takashi [Department of Electronics and Information Systems, Akita Prefectural University, 84-4 Tsuchiya Ebinokuchi, 015-0055 Yuri-Honjo (Japan)

    2010-02-15

    The pulsed laser deposition (PLD) technique with bias voltage application for formation of high quality ZnO films was investigated. Oxygen ambient in the PLD chamber significantly decreased the photoluminescence (PL) intensity of near band edge (NBE) emission. Then, instead of using oxygen ambient, the PLD technique with bias voltage application was optimized to attain the stoichiometric composition of the ZnO films. As the deposition temperature was increased, the X-ray spectrum width diffracted from the (0002) planes was decreased and it showed a minimum value at 700 C. The PL intensity of the NBE emission also had its maximum value for the film deposited at 700 C. For the ZnO films deposited at 700 C, the X-ray spectrum width showed the minimum value under a bias voltage of -50 V. The PL intensity of the NBE emission also had a maximum value under the same bias voltage. Thus, ZnO films deposited under a bias voltage of -50 V at 700 C had strong NBE emission intensities. These results could be explained not only by attaining the stoichiometric composition of the ZnO film but also by decreasing the number of high energy O{sup 2-} ions which caused non-radiative recombination centers in the film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Voltage biasing, cyclic voltammetry, & electrical impedance spectroscopy for neural interfaces.

    Science.gov (United States)

    Wilks, Seth J; Richner, Tom J; Brodnick, Sarah K; Kipke, Daryl R; Williams, Justin C; Otto, Kevin J

    2012-02-24

    Electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) measure properties of the electrode-tissue interface without additional invasive procedures, and can be used to monitor electrode performance over the long term. EIS measures electrical impedance at multiple frequencies, and increases in impedance indicate increased glial scar formation around the device, while cyclic voltammetry measures the charge carrying capacity of the electrode, and indicates how charge is transferred at different voltage levels. As implanted electrodes age, EIS and CV data change, and electrode sites that previously recorded spiking neurons often exhibit significantly lower efficacy for neural recording. The application of a brief voltage pulse to implanted electrode arrays, known as rejuvenation, can bring back spiking activity on otherwise silent electrode sites for a period of time. Rejuvenation alters EIS and CV, and can be monitored by these complementary methods. Typically, EIS is measured daily as an indication of the tissue response at the electrode site. If spikes are absent in a channel that previously had spikes, then CV is used to determine the charge carrying capacity of the electrode site, and rejuvenation can be applied to improve the interface efficacy. CV and EIS are then repeated to check the changes at the electrode-tissue interface, and neural recordings are collected. The overall goal of rejuvenation is to extend the functional lifetime of implanted arrays.

  11. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    Science.gov (United States)

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-01-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction. PMID:27759080

  12. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    Science.gov (United States)

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-10-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction.

  13. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases

    Institute of Scientific and Technical Information of China (English)

    Wang Yiyuan; Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Gao Bo

    2011-01-01

    A linear voltage regulator was irradiated by 60Co γ at high and low dose rates with two bias conditions to investigate the dose rate effect.The devices exhibit enhanced low dose rate sensitivity (ELDRS) under both biases.Comparing the enhancement factors between zero and working biases,it was found that the ELDRS is more severe under zero bias conditions.This confirms that the ELDRS is related to the low electric field in a bipolar structure.The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator.This may be helpful for designing radiation hardened devices.

  14. Tuning the defect mode in ternary photonic crystal with external voltage for designing a controllable optical filter

    Science.gov (United States)

    Jamshidi-Ghaleh, Kazem; Rashidi, Shiva; Vahedi, Ali

    2015-09-01

    In this work, behavior of defect mode in one-dimensional ternary photonic crystal (1DTPC) structure with arrangement of (MgF2/Ag/TiO2)5LiNbO3(TiO2/Ag/MgF2)5 was investigated under the applied external electric dc voltage. The defect layer is lithium niobate (LiNbO3), an electro-optical (EO) material whose refractive index is voltage-dependent with high EO coefficient. In comparison, magnesium fluoride (MgF2) and titanium dioxide (TiO2) layers have very low EO coefficients. A narrow localized defect mode with perfect transmittance was appeared inside the photonic band gap. Under applying the positive or negative biases, red shift and blue shift was observed in the defect mode, respectively. More than 120 nm tunability was obtained under externally applied voltage in the range of -200 V to 200 V. The physical interpretation is very simple. Change in optical path-length displaces the localized wavelength of the defect mode due to Bragg interface condition. The externally tunable localized mode can be employed in designing a controllable optical filter, one of the essential devices for new-generation all-optical integrated circuits.

  15. Improvement of stability of sinusoidally driven atmospheric pressure plasma jet using auxiliary bias voltage

    Directory of Open Access Journals (Sweden)

    Hyun-Jin Kim

    2015-12-01

    Full Text Available In this study, we have proposed the auxiliary bias pulse scheme to improve the stability of atmospheric pressure plasma jets driven by an AC sinusoidal waveform excitation source. The stability of discharges can be significantly improved by the compensation of irregular variation in memory voltage due to the effect of auxiliary bias pulse. From the parametric study, such as the width, voltage, and onset time of auxiliary bias pulse, it has been demonstrated that the auxiliary bias pulse plays a significant role in suppressing the irregular discharges caused by the irregular variation in memory voltage and stable discharge can be initiated with the termination of the auxiliary bias pulse. As a result of further investigating the effects of the auxiliary pulse scheme on the jet stability under various process conditions such as the distance between the jet head and the counter electrode, and carrier gas flow, the jet stability can be improved by adjusting the amplitude and number of the bias pulse depending on the variations in the process conditions.

  16. Estimates of bias and uncertainty in recorded external dose

    Energy Technology Data Exchange (ETDEWEB)

    Fix, J.J.; Gilbert, E.S.; Baumgartner, W.V.

    1994-10-01

    A study is underway to develop an approach to quantify bias and uncertainty in recorded dose estimates for workers at the Hanford Site based on personnel dosimeter results. This paper focuses on selected experimental studies conducted to better define response characteristics of Hanford dosimeters. The study is more extensive than the experimental studies presented in this paper and includes detailed consideration and evaluation of other sources of bias and uncertainty. Hanford worker dose estimates are used in epidemiologic studies of nuclear workers. A major objective of these studies is to provide a direct assessment of the carcinogenic risk of exposure to ionizing radiation at low doses and dose rates. Considerations of bias and uncertainty in the recorded dose estimates are important in the conduct of this work. The method developed for use with Hanford workers can be considered an elaboration of the approach used to quantify bias and uncertainty in estimated doses for personnel exposed to radiation as a result of atmospheric testing of nuclear weapons between 1945 and 1962. This approach was first developed by a National Research Council (NRC) committee examining uncertainty in recorded film badge doses during atmospheric tests (NRC 1989). It involved quantifying both bias and uncertainty from three sources (i.e., laboratory, radiological, and environmental) and then combining them to obtain an overall assessment. Sources of uncertainty have been evaluated for each of three specific Hanford dosimetry systems (i.e., the Hanford two-element film dosimeter, 1944-1956; the Hanford multi-element film dosimeter, 1957-1971; and the Hanford multi-element TLD, 1972-1993) used to estimate personnel dose throughout the history of Hanford operations. Laboratory, radiological, and environmental sources of bias and uncertainty have been estimated based on historical documentation and, for angular response, on selected laboratory measurements.

  17. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing.

    Science.gov (United States)

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm(2)) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  18. Age-dependent recall bias for material of internal versus external origin.

    Science.gov (United States)

    Barrett, Anna M; Crucian, Gregory P; Wingard, Ellen M; Graybeal, Laura A; Heilman, Kenneth M

    2003-09-01

    To learn whether young and aged subjects exhibit different recall biases for internally derived (Internal) versus externally supplied (External) material. Internally derived knowledge, prized by educators and therapists, can bring about dramatic behavioral change. Such information, seldom assessed on formal memory testing, may be preferentially recalled compared with external-origin material. Under some circumstances, however, subjects may demonstrate a recall advantage for externally supplied over internally generated material. We compared Internal and External word recall in young and aged subjects with and without explicit intent to remember. Although overall the young and aged subjects recalled the same number of words, we did find a word-origin recall bias. This recall bias differed by age group (P = 0.005). When not instructed to remember words, the young subjects tended to remember more External words, while aged subjects remembered more Internal words. The differences in the brain mechanisms mediating Internal versus External recall bias are unknown. However, aging may modify an Internal-External memory bias.

  19. Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Harvey, Steven P.; Johnston, Steve; Teeter, Glenn

    2016-11-21

    We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ~1014 cm-3 to ~1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

  20. Estimates of External Validity Bias When Impact Evaluations Select Sites Nonrandomly

    Science.gov (United States)

    Bell, Stephen H.; Olsen, Robert B.; Orr, Larry L.; Stuart, Elizabeth A.

    2016-01-01

    Evaluations of educational programs or interventions are typically conducted in nonrandomly selected samples of schools or districts. Recent research has shown that nonrandom site selection can yield biased impact estimates. To estimate the external validity bias from nonrandom site selection, we combine lists of school districts that were…

  1. Voltage Control of Exchange Bias in a Chromium Oxide Based Thin Film Heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3. In this study the electrically-controlled exchange bias is investigated in an all thin film Cr2O3/PdCo exchange bias heterosystem where an MBE grown ferromagnetic and perpendicular anisotropic Pd/Co multilayer has been deposited on a PLD grown (0001) Cr2O3 thin film. Prototype devices are fabricated using lithography techniques. Using a process of magnetoelectric annealing, voltage control of exchange bias in Cr2O3 heterostructures is demonstrated with significant implications for scalability of ultra-low power memory and logical devices. In addition, the dependence of the exchange bias on the applied electric and magnetic fields are independently studied at 300K and isothermal voltage-controlled switching is investigated. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  2. Low-Voltage Process-Compensated VCO with On-Chip Process Monitoring and Body-Biasing Circuit Techniques

    OpenAIRE

    Ueno, Ken; Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

    2009-01-01

    A voltage-controlled oscillator (VCO) tolerant to process variations at lower supply voltage was proposed. The circuit consists of an on-chip threshold-voltage-monitoring circuit, a current-source circuit, a body-biasing control circuit, and the delay cells of the VCO. Because variations in low-voltage VCO frequency are mainly determined by that of the current in delay cells. a current-compensation technique was adopted by using an on-chip threshold-voltage-monitoring circuit and body-biasing...

  3. Removal of shells of multi-wall carbon nanotubes by repeatedly scanning bias voltage

    Institute of Scientific and Technical Information of China (English)

    LI Qiuhong; WANG Taihong

    2004-01-01

    Carbon nanotubes can either be metallic or semiconducting, depending on their chirality. IBM converted multi-wall nanotubes into either a metallic or a semicon- ducting conductor by selectively removing the shells of the MWNTs. This was realized by applying a constant voltage to the tubes in air. Here we report a new method to remove the shells of a single MWNT just by repeatedly scanning the bias voltage in vacuum. Both the direct contact of the outmost shell with the electrodes and the high anisotropy of thermal conductivity help to remove the shells one by one.

  4. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...... and tip Fermi levels. STM here involves coherent two-step interfacial electron transfer between the redox level and the enclosing substrate and tip. We have also extended previous experimental in situ STM studies of the blue copper protein Pseudomonas aeruginosa azurin, adsorbed on Au(111), to cover...

  5. SEMICONDUCTOR DEVICES Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

    Science.gov (United States)

    Yan, Pu; Liang, Wang; Tingting, Yuan; Sihua, Ouyang; Lei, Pang; Guoguo, Liu; Weijun, Luo; Xinyu, Liu

    2010-10-01

    The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate—source and gate—drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate—source and gate—drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.

  6. Design of a Low Voltage CMOS LNA at 2 GHz with Substrate-Bias

    Science.gov (United States)

    Wan Muhamad Hatta, S. F.; Soin, N.

    2008-11-01

    A low-voltage (1.5V), 2 GHz cascode CMOS low noise amplifier (LNA) has been designed and simulated using Silvaco's SMARTSPICE RF. The proposed design employs substrate bias of 0.5V and utilizes inductive source degeneration. This paper further presents an analysis on the effect of substrate bias on the MOSFET's threshold voltage as well as the transconductance. The simulated power gain (S21) is of 5.2 dB and a noise figure (NF) of 2.2975 dB is achieved at the operating frequency of 2 GHz. The Input Referred 1dB Compression Point (P1dB) and the third-order intercept point (IP3) are -12.891 dB and -1.6844 dB respectively.

  7. Influence of bias voltage on the stability of CsI photocathodes exposed to air

    CERN Document Server

    Nitti, M A; Nappi, E; Singh, B K; Valentini, A

    2002-01-01

    We describe a possible correlation between the bias voltage applied to the substrate during the growth of CsI photocathodes and the variation of quantum efficiency (QE) after one day exposure to humid air. It was found that fresh samples are much less sensitive to humid air when a high negative bias voltage was applied during film growth. A model based on surface film interaction with water molecules is presented for the observed effect. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements have been performed to examine, respectively, the bulk structure and the surface of fresh and exposed CsI samples. Also reported are transmittance measurements for fresh and aged CsI samples in the wavelength range 190-850 nm.

  8. Ultra-Low-Voltage Self-Body Biasing Scheme and Its Application to Basic Arithmetic Circuits

    Directory of Open Access Journals (Sweden)

    Ramiro Taco

    2015-01-01

    Full Text Available The gate level body biasing (GLBB is assessed in the context of ultra-low-voltage logic designs. To this purpose, a GLBB mirror full adder is implemented by using a commercial 45 nm bulk CMOS triple-well technology and compared to equivalent conventional zero body-biased CMOS and dynamic threshold voltage MOSFET (DTMOS circuits under different running conditions. Postlayout simulations demonstrate that, at the parity of leakage power consumption, the GLBB technique exhibits a significant concurrent reduction of the energy per operation and the delay in comparison to the conventional CMOS and DTMOS approaches. The silicon area required by the GLBB full adder is halved with respect to the equivalent DTMOS implementation, but it is higher in comparison to conventional CMOS design. Performed analysis also proves that the GLBB solution exhibits a high level of robustness against temperature fluctuations and process variations.

  9. Influence of bias voltage on structural and optical properties of TiNx thin films

    Science.gov (United States)

    Singh, Omveer; Dahiya, Raj P.; Malik, Hitendra K.; Kumar, Parmod

    2015-08-01

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H2 and N2 gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  10. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...... promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed....

  11. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...... promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed....

  12. Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage

    Institute of Scientific and Technical Information of China (English)

    GUO Yang-Ming; MO Dang; LI Zhe-Yi; LIU Yi; HE Zhen-Hui; CHEN Di-Hu

    2004-01-01

    @@ Tetrahedral amorphous hydrogenated carbon (ta-C:H) films on Si(100) substrates were prepared by using a magnetic-field-filter plasma stream deposition system. Samples with different ratios of spa-bond to sp2-bond were obtained by changing the bias voltage applied to the substrates. The ellipsometric spectra of various carbon films in the photon energy range of 1.9-5.4eV were measured. The refractive index n and the relative sp3 C ratio of these films were obtained by simulating their ellipsometric spectra using the Forouhi-Bloomer model and by using the Bruggeman effective medium approximation, respectively. The haemocompatibility of these ta-C:H films was analysed by observation of platelet adhesion and measurement of kinetic clotting time. The results show that the sp3 C fraction is dependent on the substrate bias voltage, and the haemocompatibility is dependent on the ratio of sp3-bond to sp2-bond. A good haemocompatibility material of ta-C:H films with a suitable sp3 C fraction can be prepared by changing the substrate bias voltage.

  13. Relationship between bias voltage and microstructure as well as properties of CrAlYN films

    Institute of Scientific and Technical Information of China (English)

    付英英; 李红轩; 吉利; 刘晓红; 刘流; 周惠娣; 陈建敏

    2015-01-01

    In this work, a series of CrAlYN films doped with 1 at.%yttrium were deposited by unbalanced reactive magnetron sputtering under different bias voltages. The effects of bias voltage on microstructure and properties of the CrAlYN films were subsequently investigated. It is found that all the as-deposited films have similar chemical composition and crystalline structure. However, the bias voltage has significant impact on the mechanical properties and oxidation resistance of the resulting films. Namely, the film deposited at 100 V has the highest hardness and best oxidation resistance, which are mainly attributed to its denser structure and higher Al content than others. In addition, the film obtained at 100 V exhibits superior oxidation resistance even at 1000 ◦C, and good friction and wear properties at 600 and 800 ◦C, and the latter two are mainly ascribed to the formation of compact transfer layer on the worn surfaces. However, this film experienced obvious wear loss at low testing temperatures (i.e., 200 and 400◦C) due to the serious abrasive wear.

  14. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

    DEFF Research Database (Denmark)

    Gloos, K.; Utko, P.; Aagesen, M.;

    2006-01-01

    We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our...... analysis is based on a single scaling factor, extracted from the experimental I(V) characteristics. For both polarities, this scaling factor transforms the change of bias voltage into a change of electron energy. The latter is determined with respect to the top of the potential barrier of the contact....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

  15. Dynamical Localization in a Two-Electron Quantum Dot Molecule Biased by a dc Voltage

    Institute of Scientific and Technical Information of China (English)

    王立民; 段素青; 赵宪庚; 刘承师; 马本堃

    2003-01-01

    We study the dynamics of two interacting electrons in a coupled-quantum-dot system with a time-dependent external electric field. The numerical results of the two-particle states reveal that the dynamical localization still exists under appropriate dc and ac voltage amplitudes. Such localization is different from the stationary localization phenomenon. Our conclusion is instructive for the field of quantum function devices.

  16. Influence of external voltage on the reprotonated polyaniline films by Fourier Transform Infrared spectroscopy.

    Science.gov (United States)

    Zhou, Tieli; Xing, Shuangxi; Zhang, Chuanzhou; Wu, Yan; Zhao, Chun

    2009-07-01

    In this paper, we reported the electrical fourier transform infrared (FT-IR) spectra measurements on the reprotonated polyaniline (PANI) thin films. Application of external voltage reduced the intensity in FT-IR spectra and resulted in the shift of band situation. The FT-IR spectra as a function of temperature were also conducted in order to investigate the effect of Joule heating. We found that the influence of CC of phenyl units and the CC of quinoid were quite different as a function of external voltage and temperature. The current-voltage (I-V) curves of the PANI film measured in the range of 0-175 V showed that the resistance kept constant at 0-75 V while it increased from 75 to 175 V. The I-V curves confirmed the presence of Joule heating effect during 75-175 V. According to the experiment results, we concluded that external voltage could produce large average hopping energy, which allowed the charge transfer by hopping between the conducting domains during 0-75 V. The deprotonation of PANI was caused by Joule heating effect, resulting in the decreasing conductivity from 75 to 175 V.

  17. Voltage Controlled Exchange Bias in a Cr2O3 based heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Binek, Christian

    2015-03-01

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3, which has a voltage controlled net magnetization at the (0001) surface. Voltage control of magnetism in a Cr2O3 thin film system has presented significant challenges. In this study we explore the electric control of exchange bias in an all-thin-film system of decreasing chromia film thickness with significant implications for scalability of ultra-low power memory and logical devices. Cross-sectional HRTEM indicates that grain boundaries in the metallic bottom electrode propagate into the Cr2O3 thin film with detrimental effects on leakage currents. We address this issue via a three-step growth method for the deposition of epitaxial Pd on sapphire. The resulting microstructure of the films is analyzed by reflection high-energy electron diffraction, tunneling electron microscopy and x-ray diffraction. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  18. Performance of external cavity mode-locked semiconductor lasers employing reverse biased saturable absorbers

    DEFF Research Database (Denmark)

    Yvind, Kresten; Skovgaard, P.M.W.; Mørk, Jesper;

    2002-01-01

    We have experimentally investigated the performance of external cavity mode-locked semiconductor lasers employing reverse biased saturable absorbers. We have measured the magnitude of trailing pulses when varying the chip length and studied the pulse quality when changing the driving conditions...

  19. Negative Bias Temperature Instability "Recovery" under Negative Stress Voltage with Different Oxide Thicknesses

    Institute of Scientific and Technical Information of China (English)

    CAO Yan-Rong; MA Xiao-Hua; HAO Yue; ZHU Min-Bo; TIAN Wen-Chao; ZHANG Yue

    2011-01-01

    Different phenomena are observed under negative gate voltage stress which is smaller than the previous degradation stress in PMOSFETs with different oxide thicknesses. We adopt the real time method to make a point of the drain current to study the degradation and recovery of negative bias temperature instability (NBTI). For the device with thin oxide, recovery phenomenon appears when smaller negative voltage stress was applied, due to the more influencing oxide charges detrapping effects than the interface states. For the device with thick oxide, not recovery but degradation phenomenon comes forth. As many charges are trapped in the deeper position and higher energy level in the oxide, these charges can not be detrapped. Therefore, the effect of the charge detrapping is smaller than that of the interface states in the thick oxide. The degradation presents itself during the 'recovery' time.

  20. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

  1. Random walk with nonuniform angular distribution biased by an external periodic pulse

    Science.gov (United States)

    Acharyya, Aranyak

    2016-11-01

    We studied the motion of a random walker in two dimensions with nonuniform angular distribution biased by an external periodic pulse. Here, we analytically calculated the mean square displacement (end-to-end distance of a walk after n time steps), without bias and with bias. We determined the average x-component of the final displacement of the walker. Interestingly, we noted that for a particular periodicity of the bias, this average x-component of the final displacement becomes approximately zero. The average y-component of the final displacement is found to be zero for any perodicity of the bias, and its reason can be attributed to the nature of the probability density function of the angle (subtended by the displacement vector with the x-axis). These analytical results are also supported by computer simulations. The present study may be thought of as a model for arresting the bacterial motion (along a preferred direction) by an external periodic bias. This article will be useful for undergraduate students of physics, statistics and biology as an example of an interdisciplinary approach to understand a way to control bacterial motion.

  2. Adjustability of resonance frequency by external magnetic field and bias electric field of sandwich magnetoelectric PZT/NFO/PZT composites

    Science.gov (United States)

    Xu, Ling-Fang; Feng, Xing; Sun, Kang; Liang, Ze-Yu; Xu, Qian; Liang, Jia-Yu; Yang, Chang-Ping

    2017-07-01

    Sandwich magnetoelectric composites of PZT/NFO/PZT (PNP) have been prepared by laminating PZT5, NiFe2O4, and PZT5 ceramics in turn with polyvinyl alcohol (PVA) paste. A systematic study of structural, magnetic and ferroelectric properties is undertaken. Structural studies carried out by X-ray diffraction indicate formation of cubic perovskite phase of PZT5 ceramic and cubic spinel phase of NiFe2O4 ceramic. As increasing the content of PZT5 phase, ferroelectric loops and magnetic loops of PNP composites showed increasing remnant electric polarizations and decreasing remnant magnetic moments separately. Both external magnetic fields and bias voltages could regulate the basal radial resonance frequency of the composites, which should be originated with the transformation and coupling of the stress between the piezoelectric phase and magnetostrictive phase. Such magnetoelectric composite provides great opportunities for electrostatically tunable devices.

  3. Voltage controlled exchange bias in an all-thin-film Cr2O3 based heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Binek, Christian

    2014-03-01

    Spintronics utilizes the electron's spin degree of freedom for an advanced generation of electronic devices with novel functionalities. Controlling magnetism by electrical means has been identified as a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Previously, robust isothermal electric control of exchange bias has been achieved near room temperature utilizing a bulk single crystal of Cr2O3. In this study electric control of exchange bias in an all-thin-film system is demonstrated with significant implications for device realization. In particular, voltage controlled switching of exchange bias in a Cr2O3 based magnetoelectric magnetic tunnel junction enables nonvolatile memory storage with virtually dissipationless writing at, or above, room temperature. Additionally, unique physical properties which arise due to the Cr2O3 thin film geometry are highlighted. This project is supported by NSF through MRSEC DMR 0213808, by the NRC/NRI supplement to MRSEC, and by CNFD and C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program.

  4. Enhancement of the spin Hall voltage in a reverse-biased planar p -n junction

    Science.gov (United States)

    Nádvorník, L.; Olejník, K.; Němec, P.; Novák, V.; Janda, T.; Wunderlich, J.; Trojánek, F.; Jungwirth, T.

    2016-08-01

    We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p -n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μ m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p -n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p -n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p -n bias.

  5. TiAlN coatings deposited by triode magnetron sputtering varying the bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Devia, D.M. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Laboratorio de Materiales, Universidad Nacional de Colombia Sede Medellin, Sede Medellin, Antioquia (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Tschiptschin, A.P. [Escola Politecnica da Universidade de Sao Paulo, Depto. de Engenharia Metalurgica e de Materiais, Sao Paulo, SP (Brazil); Velez, J.M. [Laboratorio de Materiales, Universidad Nacional de Colombia Sede Medellin, Sede Medellin, Antioquia (Colombia)

    2011-05-01

    TiAlN films were deposited on AISI O1 tool steel using a triode magnetron sputtering system. The bias voltage effect on the composition, thickness, crystallography, microstructure, hardness and adhesion strength was investigated. The coatings thickness and elemental composition analyses were carried out using scanning electron microscopy (SEM) together with energy dispersive X-ray (EDS). The re-sputtering effect due to the high-energy ions bombardment on the film surface influenced the coatings thickness. The films crystallography was investigated using X-ray diffraction characterization. The X-ray diffraction (XRD) data show that TiAlN coatings were crystallized in the cubic NaCl B1 structure, with orientations in the {l_brace}1 1 1{r_brace}, {l_brace}2 0 0{r_brace} {l_brace}2 2 0{r_brace} and {l_brace}3 1 1{r_brace} crystallographic planes. The surface morphology (roughness and grain size) of TiAlN coatings was investigated by atomic force microscopy (AFM). By increasing the substrate bias voltage from -40 to -150 V, hardness decreased from 32 GPa to 19 GPa. Scratch tester was used for measuring the critical loads and for measuring the adhesion.

  6. Effect of bias voltage on microstructure and mechanical properties of arc evaporated (Ti, Al)N hard coatings

    Indian Academy of Sciences (India)

    F Aliaj; N Syla; S Avdiaj; T Dilo

    2013-06-01

    In the present study, authors report on the effect that substrate bias voltage has on the microstructure and mechanical properties of (Ti, Al)N hard coatings deposited with cathodic arc evaporation (CAE) technique. The coatings were deposited from a Ti0.5Al0.5 powder metallurgical target in a reactive nitrogen atmosphere at three different bias voltages: UB = −25, −50 and −100 V. The coatings were characterized in terms of compositional, microstructural and mechanical properties. Microstructure of the coatings was investigated with the aid of X-ray diffraction in glancing angle mode, which revealed information on phase composition, crystallite size, stress-free lattice parameter and residual stress. Mechanical properties were deduced from nano-indentation measurements. The residual stress in all the coatings was compressive and increased with increasing bias voltage in a manner similar to that reported in literature for Ti–Al–N coatings deposited with CAE. The bias voltage was also found to significantly influence the phase composition and crystallite size. At −25 V bias voltage the coating was found in single phase fcc-(Ti, Al)N and with relatively large crystallites of ∼9 nm. At higher bias voltages (−50 and −100 V), the coatings were found in dual phase fcc-(Ti, Al)N and fcc-AlN and the size of crystallites reduced to approximately 5 nm. The reduction of crystallite size and the increase of compressive residual stress with increasing bias voltage both contributed to an increase in hardness of the coatings.

  7. Eliminating leakage current in voltage-controlled exchange-bias devices

    Science.gov (United States)

    Mahmood, Ather; Echtenkamp, Will; Street, Michael; Binek, Christian; Magnetic Heterostructures Team

    Manipulation of magnetism by electric field has drawn much attention due to the technological importance for low-power devices, and for understanding fundamental magnetoelectric phenomena. A manifestation of electrically controlled magnetism is voltage control of exchange bias (EB). Robust isothermal voltage control of EB was demonstrated near room temperature using a heterostructure of Co/Pd thin film and an exchange coupled single crystal of the antiferromagnetic Cr2O3 (Chromia). A major obstacle for EB in lithographically patterned Chromia based thin-film devices is to minimize the leakage currents at high electric fields (>10 kV/mm). By combining electrical measurements on patterned devices and conductive Atomic Force Microscopy of Chromia thin-films, we investigate the defects which form conducting paths impeding the application of sufficient voltage for demonstrating the isothermal EB switching in thin film heterostructures. Technological challenges in the device fabrication will be discussed. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC Abstract DMR-0820521.

  8. Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Lytvynenko, Ia.M. [Sumy State University, 2, Rimskogo-Korsakova Str., 40007 Sumy (Ukraine); Hauet, T., E-mail: thomas.hauet@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France); Montaigne, F. [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France); Bibyk, V.V. [Sumy State University, 2, Rimskogo-Korsakova Str., 40007 Sumy (Ukraine); Andrieu, S. [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France)

    2015-12-15

    Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height.

  9. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  10. Externalized attributional bias in the Ultra High Risk (UHR) for psychosis population.

    Science.gov (United States)

    Thompson, Andrew; Papas, Alicia; Bartholomeusz, Cali; Nelson, Barnaby; Yung, Alison

    2013-04-30

    Specific externalizing attributional biases appear to be common in early psychosis. They may represent trait risk factors for the later development of a psychotic disorder, yet few studies have investigated this in clinical "at risk" populations. We aimed to investigate one particular bias, the Locus of Control of reinforcement (LOC) in a "Ultra High Risk" (UHR) for psychosis group. We recruited UHR individuals from an established at risk clinical service and a community control group. LOC was measured using the Adult Nowicki Strickland Internal External scale (ANSIE). Neuropsychological functioning, social functioning and psychopathology were assessed. We analyzed data from 30 controls and 30 UHR individuals. The UHR sample had a significantly more externalized LOC (control for events perceived to be external to the person) than controls. This difference remained statistically significant after adjusting for covariates (age, gender and IQ). More externalized LOC scores were negatively correlated with social and occupational functioning scores in the control group but not in the UHR group and positively correlated with negative symptoms and paranoid symptoms in the UHR group. These findings have implications for identifying potential psychological vulnerabilities for the development of psychosis and informing treatment approaches within the at risk group.

  11. Effect of applied dc bias voltage on composition, chemical bonding and mechanical properties of carbon nitride films prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    LI Hong-xuan; XU Tao; HAO Jun-ying; CHEN Jian-min; ZHOU Hui-di; XUE Qun-ji; LIU Hui-wen

    2004-01-01

    Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.

  12. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    Science.gov (United States)

    Degtiarenko, Pavel V.; Popov, Vladimir E.

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  13. Effect of external and internal magnetic fields on the bias stability in a Zeeman laser gyroscope

    Energy Technology Data Exchange (ETDEWEB)

    Kolbas, Yu Yu; Saveliev, I I; Khokhlov, N I [Open Joint-Stock Company M.F. Stel' makh Polyus Research Institute, Moscow (Russian Federation)

    2015-06-30

    With the specific features of electronic systems of a Zeeman laser gyroscope taken into account, the basic physical mechanisms of the magnetic field effect on the bias stability and the factors giving rise to the internal magnetic fields are revealed. The hardware-based methods of reducing the effect of external and internal magnetic fields are considered, as well as the algorithmic methods for increasing the stability of the bias magnetic component by taking into account its reproducible temperature and time dependences. Typical experimental temperature and time dependences of the magnetic component of the Zeeman laser gyro bias are presented, and by their example the efficiency of the proposed methods for reducing the effect of magnetic fields is shown. (laser gyroscopes)

  14. Correlation between Barrier Width, Barrier Height, and DC Bias Voltage Dependences on the Magnetoresistance Ratio in Ir-Mn Exchange Biased Single and Double Tunnel Junctions

    Science.gov (United States)

    Saito, Yoshiaki; Amano, Minoru; Nakajima, Kentaro; Takahashi, Shigeki; Sagoi, Masayuki; Inomata, Koichiro

    2000-10-01

    Dual spin-valve-type double tunnel junctions (DTJs) of Ir-Mn/CoFe/AlOx/Co90Fe10/AlOx/CoFe/Ir-Mn and spin-valve-type single tunnel junctions (STJs) of Ir-Mn/CoFe/AlOx/CoFe/Ni-Fe were fabricated using an ultrahigh vacuum sputtering system, conventional photolithography and ion-beam milling. The STJs could be fabricated with various barrier heights by changing the oxidization conditions during deposition and changing the annealing temperature after deposition, while the AlOx layer thickness remained unchanged. There was a correlation between barrier width, height estimated using Simmons’ expressions, and dc bias voltage dependence on the MR ratio. The VB dependence on the tunneling magnetoresistance (TMR) ratio was mainly related to the barrier width, and the decrease in the TMR ratio with increasing bias voltage is well explained, taking into account the spin-independent two-step tunneling via defect states in the barrier, as a main mechanism, at room temperature. Under optimized oxidization and annealing conditions, the maximum TMR ratio at a low bias voltage, and the dc bias voltage value at which the TMR ratio decreases in value by half (V1/2) were 42.4% and 952 mV in DTJs, and 49.0% and 425 mV in STJs, respectively.

  15. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Science.gov (United States)

    Hernández-Rosales, E.; Cedeño, E.; Hernandez-Wong, J.; Rojas-Trigos, J. B.; Marin, E.; Gandra, F. C. G.; Mansanares, A. M.

    2016-07-01

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  16. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

    2016-07-25

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  17. Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions

    Directory of Open Access Journals (Sweden)

    Chip-Hong Chang

    2016-08-01

    Full Text Available Static Random Access Memory (SRAM has recently been developed into a physical unclonable function (PUF for generating chip-unique signatures for hardware cryptography. The most compelling issue in designing a good SRAM-based PUF (SPUF is that while maximizing the mismatches between the transistors in the cross-coupled inverters improves the quality of the SPUF, this ironically also gives rise to increased memory read/write failures. For this reason, the memory cells of existing SPUFs cannot be reused as storage elements, which increases the overheads of cryptographic system where long signatures and high-density storage are both required. This paper presents a novel design methodology for dual-mode SRAM cell optimization. The design conflicts are resolved by using word-line voltage modulation, dynamic voltage scaling, negative bit-line and adaptive body bias techniques to compensate for reliability degradation due to transistor downsizing. The augmented circuit-level techniques expand the design space to achieve a good solution to fulfill several otherwise contradicting key design qualities for both modes of operation, as evinced by our statistical analysis and simulation results based on complementary metal–oxide–semiconductor (CMOS 45 nm bulk Predictive Technology Model.

  18. Single-artificial-atom lasing using a voltage-biased superconducting charge qubit

    Energy Technology Data Exchange (ETDEWEB)

    Ashhab, S; Johansson, J R; Zagoskin, A M; Nori, Franco [Frontier Research System, Institute of Physical and Chemical Research (RIKEN), Wako-shi, Saitama 351-0198 (Japan)], E-mail: ashhab@riken.jp

    2009-02-15

    We consider a system composed of a single artificial atom coupled to a cavity mode. The artificial atom is biased such that the most dominant relaxation process in the system takes the atom from its ground state to its excited state, thus ensuring population inversion. A recent experimental manifestation of this situation was achieved using a voltage-biased superconducting charge qubit. Even under the condition of 'inverted relaxation', lasing action can be suppressed if the 'relaxation' rate is larger than a certain threshold value. Using simple transition-rate arguments and a semiclassical calculation, we derive analytic expressions for the lasing suppression condition and the state of the cavity in both the lasing and suppressed-lasing regimes. The results of numerical calculations agree very well with the analytically derived results. We start by analyzing a simplified two-level-atom model, and we then analyze a three-level-atom model that should describe accurately the recently realized superconducting artificial-atom laser.

  19. Crystalline polarity of ZnO thin films deposited under dc external bias on various substrates

    Science.gov (United States)

    Ohsawa, Takeo; Tsunoda, Kei; Dierre, Benjamin; Zellhofer, Caroline; Grachev, Sergey; Montigaud, Hervé; Ishigaki, Takamasa; Ohashi, Naoki

    2017-04-01

    Effects of the nature of substrates, either crystalline or non-crystalline, on the structure and properties of ZnO films deposited by sputtering were investigated. This study focuses mainly on the role of the external electric bias applied to substrates during magnetron sputtering deposition in controlling crystalline polarity, i.e., Zn-face or O-face, and the resulting film properties. It was found that polarity control was achieved on silica and silicon substrates but not on sapphire substrates. The substrate bias did influence the lattice parameters in the structural formation; however, the selection of the substrate type had a significant influence on the defect structures and the film properties.

  20. Influence of Negative Bias Voltage on the Mechanical and Tribological Properties of MoS2/Zr Composite Films

    Institute of Scientific and Technical Information of China (English)

    SONG Wenlong; DENG Jianxin; YAN Pei; WU Ze; ZHANG Hui; ZHAO dun; AI Xing

    2011-01-01

    MoS2/Zr composite films were deposited on the cemented carbide YT 14 (WC+14%TiC+6%Co)by medium-frequency magnetron sputtered and coupled with multi-arc ion plated techniques. The influence of negative bias voltage on the composite film properties, including adhesion strength, micro-hardness, thickness and tribological properties were investigated. The results showed that proper negative bias voltage could significantly improve the mechanical and tribological properties of composite films. The effects of negative bias voltage on film properties were also put forward. The optimal negative bias voltage was -200 V under this experiment conditions. The obtained composite films were dense, the adhesion strength was about 60 N, the thickness was about 2.4 μm, and the micro-hardness was about 9.0 GPa. The friction coefficient and wear rate was 0.12 and 2. 1 x 10-7 cm/3N·m respectively after 60 m sliding operation against hardened steel under a load of 20 N and a sliding speed of 200 rev · min 1.

  1. Trace-gas sensing using the compliance voltage of an external cavity quantum cascade laser

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, Mark C.; Taubman, Matthew S.

    2013-06-04

    Quantum cascade lasers (QCLs) are increasingly being used to detect, identify, and measure levels of trace gases in the air. External cavity QCLs (ECQCLs) provide a broadly-tunable infrared source to measure absorption spectra of chemicals and provide high detection sensitivity and identification confidence. Applications include detecting chemical warfare agents and toxic industrial chemicals, monitoring building air quality, measuring greenhouse gases for atmospheric research, monitoring and controlling industrial processes, analyzing chemicals in exhaled breath for medical diagnostics, and many more. Compact, portable trace gas sensors enable in-field operation in a wide range of platforms, including handheld units for use by first responders, fixed installations for monitoring air quality, and lightweight sensors for deployment in unmanned aerial vehicles (UAVs). We present experimental demonstration of a new chemical sensing technique based on intracavity absorption in an external cavity quantum cascade laser (ECQCL). This new technique eliminates the need for an infrared photodetector and gas cell by detecting the intracavity absorption spectrum in the compliance voltage of the laser device itself. To demonstrate and characterize the technique, we measure infrared absorption spectra of chemicals including water vapor and Freon-134a. Sub-ppm detection limits in one second are achieved, with the potential for increased sensitivity after further optimization. The technique enables development of handheld, high-sensitivity, and high-accuracy trace gas sensors for in-field use.

  2. Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI

    Science.gov (United States)

    Taco, Ramiro; Levi, Itamar; Lanuzza, Marco; Fish, Alexander

    2016-03-01

    In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SOI technology. In addition, the possibility to integrate PMOS and NMOS devices into a single common well configuration allows significant area reduction, as compared to an equivalent triple well implementation. Some arithmetic circuits were designed using GLBB approach and compared to their conventional CMOS and DTMOS counterparts under different running conditions at low voltage regime. Simulation results shows that, for 300 mV of supply voltage, a 4 × 4-bit GLBB Baugh Wooley multiplier allows performance improvement of about 30% and area reduction of about 35%, while maintaining low energy consumption as compared to the conventional CMOS ⧹ DTMOS solutions. Performance and energy benefits are maintained over a wide range of process-voltage-temperature (PVT) variations.

  3. Substrate bias voltage and deposition temperature dependence on properties of rf-magnetron sputtered titanium films on silicon (100)

    Indian Academy of Sciences (India)

    B Geetha Priyadarshini; Shampa Aich; Madhusudan Chakraborty

    2014-12-01

    Thin films or a coating of any sort prior to its application into real world has to be studied for the dependence of process variables on their structural and functional properties. One such study based on the influence of substrate conditions viz. substrate-bias voltage and substrate temperature on the structural and morphological properties, could be of great interest as far as Ti thin films are concerned. From X-ray texture pole figure and electron microscopy analysis, it was found that substrate bias voltage strongly influence preferential orientation and morphology of Ti films grown on Si (100) substrate. Deposition at higher substrate temperature causes the film to react with Si forming silicides at the film/Si substrate interface. Ti film undergoes a microstructural transition from hexagonal plate-like to round-shaped grains as the substrate temperature was raised from 300 to 50 °C during film deposition.

  4. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  5. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

    Energy Technology Data Exchange (ETDEWEB)

    Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M., E-mail: m.gregg@qub.ac.uk [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Ashcroft, C. M. [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Canalias, C. [Department of Applied Physics, Royal Institute of Technology, Roslagstullsbacken 21, 10691 Stockholm (Sweden); Gruverman, A. [Department of Physics and Astronomy, University of Nebraska Lincoln, Nebraska 68588–0299 (United States)

    2014-08-14

    Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

  6. Output voltage regulation of a k15 mode piezoelectric transformer by an external L/C component.

    Science.gov (United States)

    Hu, Junhui; Chan, Kuang Hwee; Ng, Boon Siang

    2009-06-01

    Smooth regulation of output voltage of piezoelectric transformers can significantly widen the application range of piezoelectric transformers. So far the driving frequency of piezoelectric transformers has been used to regulate the output voltage at a matching load. However, the regulation range of voltage gain achieved by the method is usually very narrow within the acceptable range of efficiency. In this work, we investigate the possibility to regulate the output voltage of a k15 mode piezoelectric transformer by an external L/C component. The effects of an L/C component in series or parallel with the input and output ports on the voltage gain are investigated theoretically and experimentally. It is found that the voltage gain can be smoothly regulated in a relatively wide range by a tunable inductor that is in series with the input port. At a matching load of 80 Omega, the voltage gain can be regulated between 0.31 and 0.94 with efficiency larger than 90% and between 0.34 and 1.18 with efficiency about 80%. It is also found that a tunable capacitor in parallel or series with the output port can be used to regulate the voltage gain with efficiency higher than 90%.

  7. Effect of bias voltage on TiAlSiN nanocomposite coatings deposited by HiPIMS

    Science.gov (United States)

    Ma, Quansheng; Li, Liuhe; Xu, Ye; Gu, Jiabin; Wang, Lei; Xu, Yi

    2017-01-01

    TiAlSiN nanocomposite coatings were deposited onto cemented carbide (WC-10 wt.%, Co) substrates by high power impulse magnetron sputtering (HiPIMS). The effect of substrate bias voltage on plasma discharge characterization of HiPIMS, element concentration, deposition rate, microstructure, surface/cross-sectional morphology, hardness and adhesion strength of coatings were studied. Compared with those deposited with direct current magnetic sputtering (DCMS), HiPIMS-deposited TiAlSiN coatings show improvements in some properties, including the surface roughness, the grain size, the hardness and adhesion strength, but a decrease in the deposition rate. When the bias voltage increases, the discharge current rose up from 118A to 165A. HiPIMS-deposited TiAlSiN coatings show a shift of the preferred crystallographic orientation from (220) to (200) and decreases in surface roughness from 14.1 nm down to 7.4 nm and grain size from 10.5 nm to 7.4 nm. Meanwhile, a change in crystal morphology from columnar to equiaxial and a grain refinement, as well as an increase of hardness from 30 GPa up to 42 GPa of those TiAlSiN coatings were observed with the increasing bias voltage and a decrease in adhesion strength from HF2 to HF5 of those coatings were revealed by indentation adhesion test.

  8. The effect of gas mixing and biased disc voltage on the preglow transient of electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Tarvainen, O.; Toivanen, V.; Komppula, J.; Kalvas, T.; Koivisto, H. [Department of Physics, University of Jyvaeskylae, Jyvaeskylae 40500 (Finland)

    2012-02-15

    The effect of gas mixing and biased disc voltage on the preglow of electron cyclotron resonance ion source plasma has been studied with the AECR-U type 14 GHz ion source. It was found that gas mixing has a significant effect on the preglow. The extracted transient beam currents and efficiency of the heavier species increase, while the currents and efficiency of the lighter species decrease when gas mixing is applied. The effect of the biased disc was found to be pronounced in continuous operation mode in comparison to preglow. The data provide information on the time scales of the plasma processes explaining the effects of gas mixing and biased disc. The results also have implications on production of radioactive ion beams in preglow mode for the proposed Beta Beam neutrino factory.

  9. Dependence of the electrical and optical properties on the bias voltage for ZnO:Al films deposited by r.f. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Hyeong [School of Electronics and Information Engineering, Kunsan National University, Kunsan (Korea, Republic of)], E-mail: jhyi@kunsan.ac.kr; Song, Jun-Tae [School of Information and Communication Engineering, Sungkyunkwan University, Suwon (Korea, Republic of)

    2008-02-15

    Aluminum-doped zinc oxide (ZnO:Al) thin films were deposited on glass, polycarbonate (PC), and polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The substrate dc bias voltage varied from 0 V to 50 V. Structural, electrical and optical properties of the films were investigated. The deposition rate of ZnO:Al films on glass substrate initially increased with the bias voltage, and then decreased with further increasing bias voltage. It was found that the best films on glass substrate with a low as 6.2 x 10{sup -4} {omega} cm and an average transmittance over 80% at the wavelength range of 500-900 nm can be obtained by applying the bias voltage of 30 V. The properties of the films deposited on polymer substrate, such as PC and PET, have a similar tendency, with slightly inferior values to those on glass substrate.

  10. Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Jinlong Jiang

    2014-01-01

    Full Text Available The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3 carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2 ratio of the films.

  11. Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe (001 ) junctions: Comparative study with Fe/MgO/Fe(001) junctions

    Science.gov (United States)

    Masuda, Keisuke; Miura, Yoshio

    2017-08-01

    We investigate bias voltage effects on the spin-dependent transport properties of Fe/MgAl 2O 4 /Fe(001) magnetic tunneling junctions (MTJs) by comparing them with those of Fe/MgO/Fe(001) MTJs. By means of the nonequilibrium Green's function method and the density functional theory, we calculate bias voltage dependencies of magnetoresistance (MR) ratios in both the MTJs. We find that in both the MTJs, the MR ratio decreases as the bias voltage increases and finally vanishes at a critical bias voltage Vc. We also find that the critical bias voltage Vc of the MgAl 2O 4 -based MTJ is clearly larger than that of the MgO-based MTJ. Since the in-plane lattice constant of the Fe/MgAl 2O 4 /Fe(001) supercell is twice that of the Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl 2O 4 -based MTJs have an identical band structure to that obtained by folding the Fe band structure of the MgO-based MTJs in the Brillouin zone of the in-plane wave vector. We show that such a difference in the Fe band structure is the origin of the difference in the critical bias voltage Vc between the MgAl 2O 4 - and MgO-based MTJs.

  12. Low frequency voltage noise in current biased HTCS thin films. [BiSrCaCuO

    Energy Technology Data Exchange (ETDEWEB)

    Gierlowski, P. (Inst. Fizyki PAN, Warszawa (Poland)); Jung, G. (Inst. Fizyki PAN, Warszawa (Poland) Physics Dept., Ben Gurion Univ. of the Negev, Beer-Sheva (Israel) Dipt. di Fisica, Univ. di Salerno (Italy)); Kula, W. (Inst. Fizyki PAN, Warszawa (Poland) Electrical Engineering Dept., Univ. of Rochester, NY (United States)); Lewandowski, S.J. (Inst. Fizyki PAN, Warszawa (Poland)); Savo, B. (Dipt. di Fisica, Univ. di Salerno (Italy)); Sobolewski, R. (Inst. Fizyki PAN, Warszawa (Poland) Electrical Engineering Dept., Univ. of Rochester, NY (United States)); Tebano, A. (Dipt. di Ingegneria Meccanica, Univ. di Roma Tor-Vergata (Italy)); Vecchione, A. (Physics Dept., Ben Gurion Univ. of the Negev, Beer-Sheva (Israel) Dipt. di Fisica, Univ. di Salerno (Italy))

    1994-02-01

    Pronounced changes in low-frequency noise power spectra have been observed, close to the transition temperature, in current biased high-T[sub c] superconducting thin films. Generally, the spectra scale as 1/f[sup [alpha

  13. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NARCIS (Netherlands)

    Niang, K.M.; Barquinha, P.M.C.; Martins, R.F.P.; Cobb, B.; Powell, M.J.; Flewitt, A.J.

    2016-01-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analyse

  14. Lack of negatively charged residues at the external mouth of Kir2.2 channels enable the voltage-dependent block by external Mg2+.

    Directory of Open Access Journals (Sweden)

    Junwei Li

    Full Text Available Kir channels display voltage-dependent block by cytosolic cations such as Mg2+ and polyamines that causes inward rectification. In fact, cations can regulate K channel activity from both the extracellular and intracellular sides. Previous studies have provided insight into the up-regulation of Kir channel activity by extracellular K+ concentration. In contrast, extracellular Mg2+ has been found to reduce the amplitude of the single-channel current at milimolar concentrations. However, little is known about the molecular mechanism of Kir channel blockade by external Mg2+ and the relationship between the Mg2+ blockade and activity potentiation by permeant K+ ions. In this study, we applied an interactive approach between theory and experiment. Electrophysiological recordings on Kir2.2 and its mutants were performed by heterologous expression in Xenopus laevis oocytes. Our results confirmed that extracellular Mg2+ could reduce heterologously expressed WT Kir2.2 currents in a voltage dependent manner. The kinetics of inhibition and recovery of Mg2+ exhibit a 3∼4s time constant. Molecular dynamics simulation results revealed a Mg2+ binding site located at the extracellular mouth of Kir2.2 that showed voltage-dependent Mg2+ binding. The mutants, G119D, Q126E and H128D, increased the number of permeant K+ ions and reduced the voltage-dependent blockade of Kir2.2 by extracellular Mg2+.

  15. External validity of sentiment mining reports: Can current methods identify demographic biases, event biases, and manipulation of reviews?

    NARCIS (Netherlands)

    Wijnhoven, Fons; Bloemen, Oscar

    2014-01-01

    Many publications in sentiment mining provide new techniques for improved accuracy in extracting features and corresponding sentiments in texts. For the external validity of these sentiment reports, i.e., the applicability of the results to target audiences, it is important to well analyze data of t

  16. The effect of the dc bias voltage on the x-ray bremsstrahlung and beam intensities of medium and highly charged ions of argon.

    Science.gov (United States)

    Rodrigues, G; Lakshmy, P S; Baskaran, R; Kanjilal, D; Roy, A

    2010-02-01

    X-ray bremsstrahlung measurements from the 18 GHz High Temperature Superconducting Electron Cyclotron Resonance Ion Source, Pantechnik-Delhi Ion Source were measured as a function of negative dc bias voltage, keeping all other source operating parameters fixed and the extraction voltage in the off condition. The optimization of medium and highly charged ions of argon with similar source operating parameters is described. It is observed that the high temperature component of the electron is altered significantly with the help of bias voltage, and the electron population has to be maximized for obtaining higher current.

  17. Improvement in nano-hardness and corrosion resistance of low carbon steel by plasma nitriding with negative DC bias voltage

    Science.gov (United States)

    Alim, Mohamed Mounes; Saoula, Nadia; Tadjine, Rabah; Hadj-Larbi, Fayçal; Keffous, Aissa; Kechouane, Mohamed

    2016-10-01

    In this work, we study the effect of plasma nitriding on nano-hardness and corrosion resistance of low carbon steel samples. The plasma was generated through a radio-frequency inductively coupled plasma source. The substrate temperature increased (by the self-induced heating mechanism) with the treatment time for increasing negative bias voltages. X-rays diffraction analysis revealed the formation of nitride phases (ɛ-Fe2-3N and γ'-Fe4N) in the compound layer of the treated samples. A phase transition occurred from 3.5 kV to 4.0 kV and was accompanied by an increase in the volume fraction of the γ'-Fe4N phase and a decrease in that of the ɛ-Fe2-3N phase. Auger electron spectroscopy revealed a deep diffusion of the implanted nitrogen beyond 320 nm. The nano-hardness increased by ~400% for the nitrogen-implanted samples compared to the untreated state, the nitride phases are believed to participate to the hardening. Potentiodynamic polarization measurements revealed that the plasma nitriding has improved the corrosion resistance behavior of the material. When compared to the untreated state, the sample processed at 4.0 kV exhibits a shift of +500 mV and a reduction to 3% in its corrosion current. These results were obtained for relatively low bias voltages and short treatment time (2 h).

  18. Current-oscillator correlation and Fano factor spectrum of quantum shuttle with finite bias voltage and temperature.

    Science.gov (United States)

    Lai, Wenxi; Cao, Yunshan; Ma, Zhongshui

    2012-05-01

    A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show that current through the oscillating island at low temperature appears to have step-like characteristics as a function of the bias voltage and the steps depend on the mean phonon number of the oscillator. At higher temperatures the current steps would disappear and this event is accompanied by the emergence of thermal noise of the charge transfer. When the system is mainly in the ground state, the zero frequency Fano factor of current manifests sub-Poissonian noise and when the system is partially driven into its excited states it exhibits super-Poissonian noise. The difference in the current noise would almost be removed for the situation in which the dissipation rate of the oscillator is much larger than the bare tunneling rates of electrons.

  19. Monte Carlo simulations of microchannel plate detectors I: steady-state voltage bias results

    Energy Technology Data Exchange (ETDEWEB)

    Ming Wu, Craig Kruschwitz, Dane Morgan, Jiaming Morgan

    2008-07-01

    X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and timeresolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a microchannel plate under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured microchannel plate sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

  20. The Effect of Bias Voltage and Gas Pressure on the Structure, Adhesion and Wear Behavior of Diamond Like Carbon (DLC Coatings With Si Interlayers

    Directory of Open Access Journals (Sweden)

    Liam Ward

    2014-04-01

    Full Text Available In this study diamond like carbon (DLC coatings with Si interlayers were deposited on 316L stainless steel with varying gas pressure and substrate bias voltage using plasma enhanced chemical vapor deposition (PECVD technology. Coating and interlayer thickness values were determined using X-ray photoelectron spectroscopy (XPS which also revealed the presence of a gradient layer at the coating substrate interface. Coatings were evaluated in terms of the hardness, elastic modulus, wear behavior and adhesion. Deposition rate generally increased with increasing bias voltage and increasing gas pressure. At low working gas pressures, hardness and modulus of elasticity increased with increasing bias voltage. Reduced hardness and modulus of elasticity were observed at higher gas pressures. Increased adhesion was generally observed at lower bias voltages and higher gas pressures. All DLC coatings significantly improved the overall wear resistance of the base material. Lower wear rates were observed for coatings deposited with lower bias voltages. For coatings that showed wear tracks considerably deeper than the coating thickness but without spallation, the wear behavior was largely attributed to deformation of both the coating and substrate with some cracks at the wear track edges. This suggests that coatings deposited under certain conditions can exhibit ultra high flexible properties.

  1. Bias voltage dependence of molecular orientation of dialkyl ketone and fatty acid alkyl ester at the liquid–graphite interface

    Energy Technology Data Exchange (ETDEWEB)

    Hibino, Masahiro, E-mail: hibino@mmm.muroran-it.ac.jp [Department of Applied Sciences, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Tsuchiya, Hiroshi [Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)

    2014-10-30

    Graphical abstract: - Highlights: • Self-assembled monolayers (SAMs) of 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) were formed on a graphite surface at the liquid–solid interface. • Orientations of the molecules in SAMs on the substrate were studied by scanning tunneling microscopy. • A perpendicular carbon skeleton-plane orientation with the CO pointing up on the surface is favorable for a substrate with negative charge and vice versa. - Abstract: Molecular orientations of self-assembled 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) monolayers adsorbed on a graphite surface were studied by scanning tunneling microscopy (STM) at the liquid–solid interface. At a positive sample bias, the central areas of the dialkyl ketone and fatty acid alkyl ester molecules in the STM images appeared as two bright regions on both sides of a dim spot and a bright region on one side of a dim spot, whereas at a negative sample bias, the areas appeared dim. This contrast variation indicates that a perpendicular carbon skeleton-plane orientation with the CO pointing down on the surface is favorable for a substrate with positive charge and vice versa because of the greater electronegativity of the oxygen atom. Upon the bias voltage reversal, the delay time for the STM image contrast change in the region was observed on a time scale of minutes. The difference between the delay time lengths for the direction of bias polarity change indicates that the perpendicular configuration with CO pointing up is more stable than that with CO pointing down. These results indicate that the use of an electric field along a direction vertical to the monolayer on the substrate provides control over the orientations of the molecules between two stable states at the liquid–solid interface.

  2. Externalizing psychopathology and behavioral disinhibition: working memory mediates signal discriminability and reinforcement moderates response bias in approach-avoidance learning.

    Science.gov (United States)

    Endres, Michael J; Rickert, Martin E; Bogg, Tim; Lucas, Jesolyn; Finn, Peter R

    2011-05-01

    Research has suggested that reduced working memory capacity plays a key role in disinhibited patterns of behavior associated with externalizing psychopathology. In this study, participants (N = 365) completed 2 versions of a go/no-go mixed-incentive learning task that differed in the relative frequency of monetary rewards and punishments for correct and incorrect active-approach responses, respectively. Using separate structural equation models for conventional (hit and false alarm rates) and signal detection theory (signal discriminability and response bias) performance indices, distinct roles for working memory capacity and changes in payoff structure were found. Specifically, results showed that (a) working memory capacity mediated the effects of externalizing psychopathology on false alarms and discriminability of go versus no-go signals; (b) these effects were not moderated by the relative frequency of monetary rewards and punishments; (c) the relative frequency of monetary rewards and punishments moderated the effects of externalizing psychopathology on hits and response bias for go versus no-go responses; and (d) these effects were not mediated by working memory capacity. The findings implicate distinct roles for reduced working memory capacity and poorly modulated active approach and passive avoidance in the link between externalizing psychopathology and behavioral disinhibition.

  3. SPEAR-1: An experiment to measure current collection in the ionosphere by high voltage biased conductors

    Science.gov (United States)

    Raitt, W. John; Myers, Neil B.; Roberts, Jon A.; Thompson, D. C.

    1990-01-01

    An experiment is described in which a high electrical potential difference, up to 45 kV, was applied between deployed conducting spheres and a sounding rocket in the ionosphere. Measurements were made of the applied voltage and the resulting currents for each of 24 applications of different high potentials. In addition, diagnostic measurements of optical emissions in the vicinity of the spheres, energetic particle flow to the sounding rocket, dc electric field and wave data were made. The ambient plasma and neutral environments were measured by a Langmuir probe and a cold cathode neutral ionization gauge, respectively. The payload is described and examples of the measured current and voltage characteristics are presented. The characteristics of the measured currents are discussed in terms of the diagnostic measurements and the in-situ measurements of the vehicle environment. In general, it was found that the currents observed were at a level typical of magnetically limited currents from the ionospheric plasma for potentials less than 12 kV, and slightly higher for larger potentials. However, due to the failure to expose the plasma contactor, the vehicle sheath modified the sphere sheaths and made comparisons with the analytic models of Langmuir-Blodgett and Parker-Murphy less meaningful. Examples of localized enhancements of ambient gas density resulting from the operation of the attitude control system thrusters (cold nitrogen) were obtained. Current measurements and optical data indicated localized discharges due to enhanced gas density that reduced the vehicle-ionosphere impedance.

  4. Effect of external resonant fields and limiter biasing on hard X-ray intensity and mirnov oscillations in IR-T1 Tokamak

    Science.gov (United States)

    Ghanbari, K.; Ghoranneviss, M.; Elahi, A. Salar

    2015-01-01

    Runaway electrons in tokamaks can cause serious damage to the first wall of the reactor and decrease its life time. Also, hard x-ray emission generated from high energy runaway electrons lead to the plasma energy loss. Therefore, suggesting methods to minimize runaway electron in tokamaks are very important. Applying external resonant field is one of the methods for controlling the Magneto Hydrodynamic (MHD) activity. Relation between the MHD activity and runaway electrons has already been studied (Jaspers et al. 1994; Ghanbari et al. 2012) Jaspers, R., et al. 1994 Phys. Rev. Lett. 72, 4093; Ghanbari, M. R., et al. 2012a Phys. Scr. 83, 055501. Present study attempts to investigate the effects of limiter biasing and Resonant Helical magnetic Field (RHF) on the generation of runaway electrons. For this purpose, plasma parameters such as plasma current, MHD oscillation, loop voltage, emitted hard x-ray intensity, Halpha impurity, safety factor in the presence and absence of external fields, were measured. Frequency activity was investigated with FFT analysis. The results show that applying resonant fields can control the MHD activity, and then hard x-ray emitted from the runaway electrons.

  5. Multiphosphine-Oxide Hosts for Ultralow-Voltage-Driven True-Blue Thermally Activated Delayed Fluorescence Diodes with External Quantum Efficiency beyond 20.

    Science.gov (United States)

    Zhang, Jing; Ding, Dongxue; Wei, Ying; Han, Fuquan; Xu, Hui; Huang, Wei

    2016-01-20

    Highly efficient low-voltage-driven -true-blue thermally activated -delayed fluorescence diodes are realized through employing a tri-phosphine oxide host (2,2',4-tris(di(phenyl) -phosphoryl)-diphenylether (DPETPO)) with a record external quantum efficiency of 23.0% and the lowest onset voltage of 2.8 V to date.

  6. Comparison of Procedures for Detecting Test-Item Bias with Both Internal and External Ability Criteria.

    Science.gov (United States)

    Shepard, Lorrie, And Others

    1981-01-01

    Sixteen approaches for detecting item bias were compared on samples of Black, White, and Chicano elementary school pupils using the Lorge-Thorndike and Raven's Coloured Progressive Matrices tests. Recommendations for practical use are made. (JKS)

  7. Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Kugler, Zoe, E-mail: zkugler@physik.uni-bielefeld.d [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany); Drewello, Volker; Schaefers, Markus; Schmalhorst, Jan; Reiss, Guenter; Thomas, Andy [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany)

    2011-01-15

    Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.

  8. Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias

    Science.gov (United States)

    Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B.; Macheret, Sergey O.

    2008-08-01

    Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

  9. Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

    Institute of Scientific and Technical Information of China (English)

    Zheng Zhi; Li Wei; Li Ping

    2013-01-01

    A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper.Based on this principle,the floating layer can pin the potential for modulating bulk field.In particular,the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX).At variation of back-gate bias,the shielding charges of NFL can alsoeliminate back-gate effects.The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS,yielding a 77% improvement.Furthermore,due to the field shielding effect of the NFL,the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

  10. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  11. Attributional biases about the origins of attitudes: externality, emotionality, and rationality.

    Science.gov (United States)

    Kenworthy, Jared B; Miller, Norman

    2002-05-01

    Pilot work and 3 studies investigated the ways people explain the origins of attitudes. Study I examined the use of 3 dimensions (externality, rationality, emotionality) to explain the origin of people's own, in-group, and out-group attitudes. Attributions for own attitudes were the least externally and emotionally based and the most rationally based. By comparison with the out-group, less externality, less emotionality, and more rationality also were attributed to in-group attitudes. Studies 2 and 3 examined the effects of intergroup threat on attributions for in- and out-group attitude positions. Under high threat, more externality and emotionality but less rationality were attributed to out-group attitudes than under low threat. Intergroup differentiation mediated the difference between out-group attributions under high and low threat.

  12. THE EFFECTS OF PULSE BIAS VOLTAGE AND N2 PARTIAL PRESSURE ON TiAIN FILMS OF ARC ION PLATING (AIP)

    Institute of Scientific and Technical Information of China (English)

    M.S. Li; S.L. Zhu; Fuhui Wang; C. Sun; L.S. Wen

    2001-01-01

    Owing to the characteristics of arc ion plating(AIP) technique, the structure and com-position of TiAlN films can be tailored by controlling of various parameters such ascompositions of target materials, N2 partial pressure, substrate bias and so on. ln thisstudy, several titanium aluminum nitride films were deposited on 1Cr11Ni2 W2Mo Vsteel for compressor blade of areo-engine under different d.c pulse bias voltage and ni-trogen partial pressure. The effects of substrate pulse bias and nitrogen partial pressureon the deposition rate, droplet formation, microstruture and elemental component ofthe films were investigated.

  13. Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liangyu

    2015-01-01

    This work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.

  14. The Development, Validation and Application of an External Criterion Measure of Achievement Test Item Bias.

    Science.gov (United States)

    Harms, Robert A.

    Based on John Rawls' theory of justice as fairness, a nine-item rating scale was developed to serve as a criterion in studies of test item bias. Two principles underlie the scale: (1) Within a defined usage, test items should not affect students so that they are unable to do as well as their abilities would indicate; and (2) within the domain of a…

  15. The Development, Validation and Application of an External Criterion Measure of Achievement Test Item Bias.

    Science.gov (United States)

    Harms, Robert A.

    Based on John Rawls' theory of justice as fairness, a nine-item rating scale was developed to serve as a criterion in studies of test item bias. Two principles underlie the scale: (1) Within a defined usage, test items should not affect students so that they are unable to do as well as their abilities would indicate; and (2) within the domain of a…

  16. Active and passive vibration isolation in piezoelectric phononic rods with external voltage excitation

    Science.gov (United States)

    Zhang, Qicheng; Lan, Yu; Lu, Wei; Wang, Shuai

    2017-05-01

    Active piezoelectric materials are applied to one-dimensional phononic crystals, for the control of longitudinal vibration propagation both in active and passive modes. Based on the electromechanical coupling between the acoustical vibration and electric field, the electromechanical equivalent method is taken to theoretically predict the transmission spectrum of the longitudinal vibration. It is shown that the phononic rod can suppress the vibration efficiently at the frequencies of interest, by actively optimizing the motions of piezoelectric elements. In an illustrated phononic rod of 11.2cm long, active tunable isolations of more than 20dB at low frequencies (500Hz-14kHz) are generated by controlling the excitation voltages of piezoelectric elements. Meanwhile, passive fixed isolation at high frequencies (14k-63kHz) are presented by its periodicity characteristics. Finite element simulations and vibration experiments on the rod demonstrate the effectiveness of the approach in terms of its vibration isolation capabilities and tunable characteristics. This phononic rod can be manufactured easily and provides numerous potential applications in designing isolation mounts and platforms.

  17. Active and passive vibration isolation in piezoelectric phononic rods with external voltage excitation

    Directory of Open Access Journals (Sweden)

    Qicheng Zhang

    2017-05-01

    Full Text Available Active piezoelectric materials are applied to one-dimensional phononic crystals, for the control of longitudinal vibration propagation both in active and passive modes. Based on the electromechanical coupling between the acoustical vibration and electric field, the electromechanical equivalent method is taken to theoretically predict the transmission spectrum of the longitudinal vibration. It is shown that the phononic rod can suppress the vibration efficiently at the frequencies of interest, by actively optimizing the motions of piezoelectric elements. In an illustrated phononic rod of 11.2cm long, active tunable isolations of more than 20dB at low frequencies (500Hz-14kHz are generated by controlling the excitation voltages of piezoelectric elements. Meanwhile, passive fixed isolation at high frequencies (14k-63kHz are presented by its periodicity characteristics. Finite element simulations and vibration experiments on the rod demonstrate the effectiveness of the approach in terms of its vibration isolation capabilities and tunable characteristics. This phononic rod can be manufactured easily and provides numerous potential applications in designing isolation mounts and platforms.

  18. Programming Arduino to Control Bias Voltages to Temperature-Depedndent Gamma-ray Detectors aboard TRYAD Mission

    Science.gov (United States)

    Stevons, C. E.; Jenke, P.; Briggs, M. S.

    2016-12-01

    Terrestrial Gamma-ray Flashes (TGFs) are sub-millisecond gamma-ray flashes that are correlated with lightning have been observed with numerous satellites since their discovery in the early 1990s. Although substantial research has been conducted on TGFs, puzzling questions regarding their origin are still left unanswered. Consequently, the Terrestrial RaYs Analysis and Detection (TRYAD) mission is designed to solve many issues about TGFs by measuring the beam profile and orientation of TGFs in low Earth orbit. This project consists of sending two CubeSats into low-Earth orbit where they will independently sample TGF beams. Both of the TRYAD CubeSats will contain a gamma-ray detector composed of lead doped plastic scintillator coupled to silicon photomultiplier (SiPM) arrays. The gain readings of the SiPMs vary with temperature and the bias voltage must be corrected to compensate. Using an Arduino micro-controller, circuitry and software was developed to control the gain in response to the resistance of a thermistor. I will present the difficulties involved with this project along with our solutions.

  19. Low bias stress and reduced operating voltage in SnCl{sub 2}Pc based n-type organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Obaidulla, SK. Md., E-mail: obaidulla20@gmail.com; Goswami, D. K., E-mail: xdipak@gmail.com, E-mail: dipak@phy.iitkgp.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Giri, P. K., E-mail: giri@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India)

    2014-05-26

    Vacuum deposited tin (IV) phthalocyanine dichloride (SnCl{sub 2}Pc) field-effect transistors were fabricated on polymethylmethacrylate/aluminum oxide (PMMA/Al{sub 2}O{sub 3}) bilayer gate dielectric, with reduced operating voltage and low contact resistance. The devices with top contact Ag electrodes exhibit excellent n-channel behavior with electron mobility values of 0.01 cm{sup 2}/Vs, low threshold voltages ∼4 V, current on/off ratio ∼10{sup 4} with an operating voltage of 10 V. Bias stress instability effects are investigated during long term operation using thin film devices under vacuum. We find that the amount of bias stress of SnCl{sub 2}Pc based thin film transistor is extremely small with characteristic relaxation time >10{sup 5} s obtained using stretched exponential model. Stressing the SnCl{sub 2}Pc devices by applying 10 V to the gate for half an hour results in a decrease of the source drain current, I{sub DS} of only ∼10% under low vacuum. These devices show highly stable electrical behavior under multiple scans and low threshold voltage instability under electrical dc bias stress (V{sub DS} = V{sub GS} = 10 V, for 2 h) even after 40 days.

  20. Influence of bias voltage on the optical and structural properties of nc-Si:H films grown by layer-by-layer (LBL) deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Tong, Goh Boon, E-mail: boontong77@yahoo.co [Solid State Research Laboratory, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Gani, Siti Meriam Ab.; Muhamad, Muhamad Rasat; Rahman, Saadah Abdul [Solid State Research Laboratory, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2009-07-01

    The effects of applying a positive bias of 25 to 100 V on the optical, structural and photoluminescence (PL) properties of hydrogenated nanocrystalline silicon (nc-Si:H) films produced by layer-by-layer (LBL) deposition technique has been studied. Optical characterization of the films has been obtained from UV-VIS-NIR spectroscopy measurements. Structural characterization has been performed using X-ray diffraction, micro-Raman spectroscopy and field emission scanning electron microscope (FESEM). PL spectroscopy technique has been used to investigate the PL properties of the films. In general, the films formed shows a mixed phase of silicon (Si) nanocrystallites embedded within an amorphous phase of the Si matrix. The crystalline volume fraction and grain size of the Si nanocrystallites have been shown to be strongly dependent on the applied bias voltage. High applied bias voltage enhances the growth rate of the films but reduces the refractive index and the optical energy gap of the films. Higher crystalline volume fraction of the films prepared at low bias voltages exhibits room temperature PL at around 1.8 eV (700 nm).

  1. Influence of deposition temperature and bias voltage on the crystalline phase of Er{sub 2}O{sub 3} thin films deposited by filtered cathodic arc

    Energy Technology Data Exchange (ETDEWEB)

    Adelhelm, Christoph, E-mail: christoph.adelhelm@ipp.mpg.de [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Pickert, Thomas [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Koch, Freimut, E-mail: freimut.koch@ipp.mpg.de [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Balden, Martin; Jahn, Stephan [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Rinke, Monika [Forschungszentrum Karlsruhe, Institute for Materials Research I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Maier, Hans [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany)

    2011-10-01

    Er{sub 2}O{sub 3} thin films on Eurofer steel substrates were produced by a filtered cathodic arc device, varying the substrate temperature (RT - 700 deg. C) and sample bias (0 to -450 V). The crystallographic phase was analyzed by X-ray diffraction and Raman spectroscopy. Deposition at {>=}600 deg. C without bias lead to solely formation of the cubic Er{sub 2}O{sub 3} phase. Thin films of the uncommon, monoclinic B-phase were prepared with a negative bias voltage of {>=}100 V at RT, and at temperatures {<=}500 deg. C for -250 V bias. The B-phase films exhibit a strongly textured film structure. Residual stress measurements show high compressive stress for B-phase films deposited at RT.

  2. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage

    Science.gov (United States)

    Hwang, J. D.; Lin, G. S.

    2016-09-01

    By varying the bias voltage of an Mg x Zn1-x O/ZnO metal-semiconductor-metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1-x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1-x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1-x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1-x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345-400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1-2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1-x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1-x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1-x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1-x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345-400 nm), the MSM-PDs demonstrate a short-wavelength band (320-345 nm) at a 3 V bias voltage.

  3. Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer

    Institute of Scientific and Technical Information of China (English)

    H0 Chi-Hon; LIAO Chen-Nan; CHIEN Feng-Tso; TSAI Yao-Tsung

    2009-01-01

    This work presents the optimal design of a silicon-on-insulator (SOI) diode structure to eliminate the back gate bias effect and to improve breakdown voltage. The SOI structure is characterized by inserting a silicon low doping buried layer (LDBL) between the silicon layer and the buried oxide layer. The LDBL thickness is a key parameter that affects the strong inversion condition of the back MOS capacitor of the new SOI diode. The optimal LDBL thickness in the SOI diode is 2.65μm. The LDBL shielding layer improved the breakdown voltage.

  4. Magnetoresistance and negative differential resistance in Ni/graphene/Ni vertical heterostructures driven by finite bias voltage: a first-principles study

    DEFF Research Database (Denmark)

    Saha, Kamal K.; Blom, Anders; Thygesen, Kristian S.

    2012-01-01

    Using the nonequilibrium Green's function formalism combined with density functional theory, we study finite bias quantum transport in Ni/Grn/Ni vertical heterostructures where n graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that the recently predicted...... differential resistance as the bias voltage is increased from Vb=0 V to Vb≃0.5 V. We confirm that both of these nonequilibrium transport effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers....

  5. Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

    Science.gov (United States)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-09-01

    Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths.

  6. Solid-state charge-based device for control of catalytic carbon monoxide oxidation on platinum nanofilms using external bias and light.

    Science.gov (United States)

    Baker, L Robert; Hervier, Antoine; Kennedy, Griffin; Somorjai, Gabor A

    2012-05-09

    Using a Pt/Si catalytic nanodiode, we externally control the rate of CO oxidation on a Pt nanofilm. The catalytic reaction can be turned on and off by alternating between bias states of the device. Additionally, the reaction rate is sensitive to photocurrent induced by visible light. The effects of both bias and light show that negative charge on the Pt increases catalytic activity, while positive charge on the Pt decreases catalytic activity for CO oxidation.

  7. A microbial fuel cell with the three-dimensional electrode applied an external voltage for synthesis of hydrogen peroxide from organic matter

    Science.gov (United States)

    Chen, Jia-yi; Zhao, Lin; Li, Nan; Liu, Hang

    2015-08-01

    The study experimentally investigates the changing performance of three-dimensional electrode H2O2-producting MFCs coupled with simultaneous wastewater treatment at various external cell voltages from 0.1 V to 0.8 V, in order to explore the optimal applied voltage and its reasons. The graphite particle electrodes made of graphite powders with polytetrafluoroethene (PTFE) as the binder are used as three-dimensional cathode. The results indicate that applied voltage is demonstrated to increase the productive rate and output of H2O2 and the efficiency of acetate degradation. Besides, a relatively high current density caused by a high applied voltage has a positive impact on anode performance in terms of organic degradation and coulombic efficiency. In addition, a relatively high voltage leads to the reduction of H2O2 and the evolution of H2. Considering H2O2 concentration, anodic COD removal and current efficiencies of MFCs at various voltages, the optimal voltage is chosen to be 0.4 V, achieving the H2O2 generation of 705.6 mg L-1 at a rate of 2.12 kg m-3 day-1 and 76% COD removal in 8 h, with energy input of 0.659 kWh per kg H2O2. Coulombic efficiency, faradic efficiency and COD conversion efficiency are 92%, 96%, and 88% respectively.

  8. CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

    Science.gov (United States)

    Wang, Ruey-Lue; Fu, Chien-Cheng; Yu, Chi; Hao, Yi-Fan; Shi, Jian-Liang; Lin, Chen-Fu; Liao, Hsin-Hao; Tsai, Hann-Huei; Juang, Ying-Zong

    2014-01-01

    A high-linearity CMOS temperature sensor with pulse output is presented. The temperature core is a resistively degenerated common-source amplifier which gate is biased by a proportional-to-absolute-temperature (PTAT) voltage generator. The source resistor is made of polysilicon which resistance has a PTAT characteristic. The current flowing through the resistor exhibits a PTAT characteristic with high linearity of 99.99% at least for a temperature range from 0 to 125 °C. The PTAT voltage generator can be adjusted by a bias voltage Vb and hence the PTAT current can also be adjusted by the Vb. The PTAT current is mirrored to an added current controlled oscillator which output pulse frequencies also exhibit a PTAT characteristic. For the chip using the 0.35 µm process, the plots of measured pulse frequencies against temperature exhibit the sensitivity of 2.30 to 2.24 kHz/°C with linearity of more than 99.99% at the Vb of 1 to 1.2 V.

  9. 负偏压法测试大电压LED器件热阻%Measuring thermal resistance for high voltage LED device and module by applying negative bias voltage

    Institute of Scientific and Technical Information of China (English)

    陈国龙; 雷瑞瑞; 陈焕庭; 陈莹亮; 吕毅军; 高玉琳; 朱丽虹; 陈忠

    2012-01-01

    热阻是衡量LED器件散热性能的重要热学参数.采用外接负偏压恒压源方法,分别使用T3Ster/Teraled热光参数测试仪和NC2991热阻仪对正向电压超过仪器量程的同一型号功率型LED的热阻进行测试,并对两种测试结果的误差进行比较分析讨论.该方法拓展了热阻仪测量范围,使正向电压大于5V的LED器件/模块的热阻测试成为可能.%Thermal resistance is a key parameter on rating the heat dissipating capability of LEDs, so its measurement becomes particularly essential. A thermal resistance measurement method for high voltage LED device and module is provided here, which can measure LED sample with forward voltage larger than 5V by applying negative bias voltage to the T3Ster/Teraled and the NC2991 thermal resistance testers respectively. The results are further compared and discussed and prove to effectively expand the testing range of thermal resistance tester.

  10. Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

    KAUST Repository

    Oh, Se Chung

    2009-10-25

    Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

  11. Simple Floquet-Wannier-Stark-Andreev viewpoint and emergence of low-energy scales in a voltage-biased three-terminal Josephson junction

    Science.gov (United States)

    Mélin, Régis; Caputo, Jean-Guy; Yang, Kang; Douçot, Benoît

    2017-02-01

    A three-terminal Josephson junction consists of three superconductors coupled coherently to a small nonsuperconducting island, such as a diffusive metal, a single or double quantum dot. A specific resonant single quantum dot three-terminal Josephson junction (Sa,Sb,Sc) biased with voltages (V ,-V ,0 ) is considered, but the conclusions hold more generally for resonant semiconducting quantum wire setups. A simple physical picture of the steady state is developed, using Floquet theory. It is shown that the equilibrium Andreev bound states (for V =0 ) evolve into nonequilibrium Floquet-Wannier-Stark-Andreev (FWS-Andreev) ladders of resonances (for V ≠0 ). These resonances acquire a finite width due to multiple Andreev reflection (MAR) processes. We also consider the effect of an extrinsic linewidth broadening on the quantum dot, introduced through a Dynes phenomenological parameter. The dc-quartet current manifests a crossover between the extrinsic relaxation dominated regime at low voltage to an intrinsic relaxation due to MAR processes at higher voltage. Finally, we study the coupling between the two FWS-Andreev ladders due to Landau-Zener-Stückelberg transitions, and its effect on the crossover in the relaxation mechanism. Three important low-energy scales are identified, and a perspective is to relate those low-energy scales to a recent noise cross-correlation experiment (Y. Cohen et al., arXiv:1606.08436).

  12. Bias in Self-Perceptions and Internalizing and Externalizing Problems in Adjustment During Early Adolescence: A Prospective Investigation

    Science.gov (United States)

    DuBois, David L.; Silverthorn, Naida

    2004-01-01

    We investigated bias in self-perceptions of competence (relative to parent ratings) for family, school, and peer domains as predictors of adjustment problems among 139 young adolescents over a 1-year period using a prospective design. Regressions examined measures of bias at Time 1 (T1) as predictors of ratings of internalizing and externalizing…

  13. An assessment of bias and uncertainty in recorded dose from external sources of radiation for workers at the Hanford Site

    Energy Technology Data Exchange (ETDEWEB)

    Fix, J.J.; Gilbert, E.S.; Baumgartner, W.V.

    1994-08-01

    Worker dose estimates are used in epidemiologic studies of nuclear workers. A major objective of these studies is to provide a direct assessment of the carcinogenic risk of exposure to ionizing radiation at low doses and dose rates. If dose estimates used in analyses of worker data are biased, then risk estimates expressed per unit of dose will also be biased. In addition, random error in dose estimates may lead to underestimation of risk coefficients and can also distort dose-response analyses. Analyses of data from nuclear worker studies, including Hanford, have typically not been adjusted for biases and uncertainties in dose estimates in part because of the lack of adequate information on the nature and magnitude of these biases and uncertainties. This report describes an approach used to assess bias and uncertainty in radiation dose for Hanford dosimetry systems. The approach can be considered as an elaboration of work conducted by a technical committee appointed by the National Academy of Sciences (NAS) used to quantify the bias and uncertainty in estimated doses for personnel exposed to radiation as a result of atmospheric testing of nuclear weapons between 1945 and 1962. In addition, laboratory studies were conducted to measure bias for selected sources of photon radiation resulting from angular response characteristics of Hanford dosimeter systems. An overall assessment is presented of bias and uncertainty for photon radiation greater than 100 keV. This radiation is expected to have caused the vast majority of recorded dose for Hanford workers.

  14. Development of theoretical approach for describing electronic properties of hetero-interface systems under applied bias voltage

    Science.gov (United States)

    Iida, Kenji; Noda, Masashi; Nobusada, Katsuyuki

    2017-02-01

    We have developed a theoretical approach for describing the electronic properties of hetero-interface systems under an applied electrode bias. The finite-temperature density functional theory is employed for controlling the chemical potential in their interfacial region, and thereby the electronic charge of the system is obtained. The electric field generated by the electronic charging is described as a saw-tooth-like electrostatic potential. Because of the continuum approximation of dielectrics sandwiched between electrodes, we treat dielectrics with thicknesses in a wide range from a few nanometers to more than several meters. Furthermore, the approach is implemented in our original computational program named grid-based coupled electron and electromagnetic field dynamics (GCEED), facilitating its application to nanostructures. Thus, the approach is capable of comprehensively revealing electronic structure changes in hetero-interface systems with an applied bias that are practically useful for experimental studies. We calculate the electronic structure of a SiO2-graphene-boron nitride (BN) system in which an electrode bias is applied between the graphene layer and an electrode attached on the SiO2 film. The electronic energy barrier between graphene and BN is varied with an applied bias, and the energy variation depends on the thickness of the BN film. This is because the density of states of graphene is so low that the graphene layer cannot fully screen the electric field generated by the electrodes. We have demonstrated that the electronic properties of hetero-interface systems are well controlled by the combination of the electronic charging and the generated electric field.

  15. Regression Analysis of the Effect of Bias Voltage on Nano- and Macrotribological Properties of Diamond-Like Carbon Films Deposited by a Filtered Cathodic Vacuum Arc Ion-Plating Method

    Directory of Open Access Journals (Sweden)

    Shojiro Miyake

    2014-01-01

    Full Text Available Diamond-like carbon (DLC films are deposited by bend filtered cathodic vacuum arc (FCVA technique with DC and pulsed bias voltage. The effects of varying bias voltage on nanoindentation and nanowear properties were evaluated by atomic force microscopy. DLC films deposited with DC bias voltage of −50 V exhibited the greatest hardness at approximately 50 GPa, a low modulus of dissipation, low elastic modulus to nanoindentation hardness ratio, and high nanowear resistance. Nanoindentation hardness was positively correlated with the Raman peak ratio Id/Ig, whereas wear depth was negatively correlated with this ratio. These nanotribological properties highly depend on the films’ nanostructures. The tribological properties of the FCVA-DLC films were also investigated using a ball-on-disk test. The average friction coefficient of DLC films deposited with DC bias voltage was lower than that of DLC films deposited with pulse bias voltage. The friction coefficient calculated from the ball-on-disk test was correlated with the nanoindentation hardness in dry conditions. However, under boundary lubrication conditions, the friction coefficient and specific wear rate had little correlation with nanoindentation hardness, and wear behavior seemed to be influenced by other factors such as adhesion strength between the film and substrate.

  16. Simultaneous Kerr and Faraday investigations of boundary magnetization and order parameter switching in voltage-controllable exchange bias films

    Science.gov (United States)

    Wang, Junlei; Echtenkamp, Will; Street, Mike; Binek, Christian

    2015-03-01

    Magnetoelectric oxides are of great interest for ultra-low power spintronics with memory and logic function. A key property for the realization of electrically switchable state variables is the voltage-controlled boundary magnetization in magnetoelectric antiferromagnets. It allows electric switching of an adjacent exchange coupled ferromagnetic layer in the absence of dissipative currents. Previous surface sensitive measurements of boundary magnetization in thin films of the archetypical magnetoelectric antiferromagnet chromia lacked explicit demonstration of the predicted rigid coupling between the bulk antiferromagnetic order parameter and the boundary magnetization. We designed a magneto-optical setup allowing simultaneous measurement of Kerr and Faraday rotation. Our experiments correlate electric field induced bulk magneto-optical effects (non-reciprocal rotation), including the response on switching of the antiferromagnetic order parameter, with the boundary magnetization. Our results suggest that switching of a ferromagnetic film strongly exchange coupled to a magnetoelectric antiferromagnetic ultra-thin film allows switching of the antiferromagnetic order parameter. We investigate the possibility that this switching phenomenon might induce a voltage pulse via a generalized variation of the inverse linear magnetoelectric effect. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC.

  17. Use of external cavity quantum cascade laser compliance voltage in real-time trace gas sensing of multiple chemicals

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, Mark C.; Taubman, Matthew S.; Kriesel, Jason M.

    2015-02-08

    We describe a prototype trace gas sensor designed for real-time detection of multiple chemicals. The sensor uses an external cavity quantum cascade laser (ECQCL) swept over its tuning range of 940-1075 cm-1 (9.30-10.7 µm) at a 10 Hz repetition rate.

  18. Friends’ Knowledge of Youth Internalizing and Externalizing Adjustment: Accuracy, Bias, and the Influences of Gender, Grade, Positive Friendship Quality, and Self-Disclosure

    Science.gov (United States)

    Rose, Amanda J.

    2012-01-01

    Some evidence suggests that close friends may be knowledgeable of youth’s psychological adjustment. However, friends are understudied as reporters of adjustment. The current study examines associations between self- and friend-reports of internalizing and externalizing adjustment in a community sample of fifth-, eighth-, and eleventh-grade youth. The study extends prior work by considering the degree to which friends’ reports of youth adjustment are accurate (i.e., predicted by youths’ actual adjustment) versus biased (i.e., predicted by the friend reporters’ own adjustment). Findings indicated stronger bias effects than accuracy effects, but the accuracy effects were significant for both internalizing and externalizing adjustment. Additionally, friends who perceived their relationships as high in positive quality, friends in relationships high in disclosure, and girls perceived youths’ internalizing symptoms most accurately. Knowledge of externalizing adjustment was not influenced by gender, grade, relationship quality, or self-disclosure. Findings suggest that friends could play an important role in prevention efforts. PMID:19377867

  19. Effect of bias voltage on tunneling mechanism in Co{sub 40}Fe{sub 40}B{sub 20}/MgO/Co{sub 40}Fe{sub 40}B{sub 20} pseudo-spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Yıldırım, Mustafa; Öksüzoğlu, Ramis Mustafa, E-mail: rmoksuzoglu@anadolu.edu.tr

    2015-04-01

    Bias voltage dependence of tunneling mechanism has been systematically investigated in Co{sub 40}Fe{sub 40}B{sub 20} (2.1 nm)/MgO (2 nm)/Co{sub 40}Fe{sub 40}B{sub 20} (1.7 nm) pseudo-spin valve magnetic tunnel junction deposited using the combination of the pulsed DC unbalanced magnetron and RF magnetron sputtering techniques. Structural investigations revealed polycrystalline and partially (001) oriented growth of CoFeB/MgO(001) MTJ with similar low interface roughness on both side of the MgO barrier. The junction with a 25×25 µm{sup 2} area indicates a giant tunnel magnetoresistance in the order of 505% at room temperature. The magnetoresistance ratio decreases with increasing applied bias voltage ranging from 0.5 to 1.8 V. Reasonable values for barrier thickness and heights were obtained using the combination of Brinkman and Gundlach models, including average barrier height and symmetry. Both barrier parameters and the tunneling mechanism vary in dependence of applied bias voltage. The tunneling mechanism indicates a change from direct to the FN tunneling, especially when reaching high bias voltages. Effect of the tunneling mechanism on the bias dependence of the magnetoresistance was also discussed. - Highlights: • Polycrystalline and partially (001) oriented CoFeB/MgO MTJ with similar interface roughness was produced. • TMR ratio of 505% was obtained at room temperature, decreasing with increasing bias. • Similar interface roughness with low barrier asymmetry results in high TMR ratio. • Tunneling mechanism changes from direct to Fowler–Nordheim for applied biases >0.8 V. • Bias dependence of TMR is correlated with change of the tunneling mechanism.

  20. Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

    Institute of Scientific and Technical Information of China (English)

    DAI Zhen-Hong; NI Jun

    2006-01-01

    @@ We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonanttunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage (I - V) curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.

  1. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  2. Transverse voltage in zero external magnetic fields, its scaling and violation of the time-reversal symmetry in MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Vasek, P. [Institute of Physics ASCR, Cukrovarnicka 10, 162 53 Prague 6 (Czech Republic)]. E-mail: vasek@fzu.cz; Shimakage, H. [KARC, National Institute of Information and Communication Technology, 588-2 Iwaoka, Kobe, 651-2492 (Japan); Wang, Z. [KARC, National Institute of Information and Communication Technology, 588-2 Iwaoka, Kobe, 651-2492 (Japan)

    2004-09-15

    The longitudinal and transverse voltages (resistances) have been measured for MgB{sub 2} in zero external magnetic fields. Samples were prepared in the form of thin film and patterned into the usual Hall bar shape. In close vicinity of the critical temperature T{sub c} non-zero transverse resistance has been observed. Its dependence on the transport current has been also studied. New scaling between transverse and longitudinal resistivities has been observed in the form {rho}{sub xy} {approx} d{rho}{sub xx}/dT. Several models for explanation of the observed transverse resistances and breaking of reciprocity theorem are discussed. One of the most promising explanation is based on the idea of time-reversal symmetry violation.

  3. Dynamic modelling and robust current control of wind-turbine driven DFIG during external AC voltage dip

    Institute of Scientific and Technical Information of China (English)

    HU Jia-bing; HE Yi-kang

    2006-01-01

    Doubly-FedInduction Generator (DFIG), with vector control applied, is widely used in Variable-Speed ConstantFrequency (VSCF) windenergy generation system and shows good performance in maximum wind energy capture. But in two traditional vector control schemes, the equivalent stator magnetizing current is considered invariant in order to simplify the rotor current inner-loop controller. The two schemes can perform very well when the grid is in normal condition. However, when grid disturbance such as grid voltage dip or swell fault occurs, the control performance worsens, the rotor over current occurs and the Fault Ride-Through (FRT) capability of the DFIG wind energy generation system gets seriously deteriorated. An accurate DFIG model was used to deeply investigate the deficiency of the traditional vector control. The improved control schemes of two typical traditional vector control schemes used in DFIG were proposed, and simulation study of the proposed and traditional control schemes, with robust rotor current control using Internal Model Control (IMC) method, was carried out. The validity of the proposed modified schemes to control the rotor current and to improve the FRT capability of the DFIG wind energy generation system was proved by the comparison study.

  4. Poor reliability between Cochrane reviewers and blinded external reviewers when applying the Cochrane risk of bias tool in physical therapy trials.

    Directory of Open Access Journals (Sweden)

    Susan Armijo-Olivo

    Full Text Available OBJECTIVES: To test the inter-rater reliability of the RoB tool applied to Physical Therapy (PT trials by comparing ratings from Cochrane review authors with those of blinded external reviewers. METHODS: Randomized controlled trials (RCTs in PT were identified by searching the Cochrane Database of Systematic Reviews for meta-analysis of PT interventions. RoB assessments were conducted independently by 2 reviewers blinded to the RoB ratings reported in the Cochrane reviews. Data on RoB assessments from Cochrane reviews and other characteristics of reviews and trials were extracted. Consensus assessments between the two reviewers were then compared with the RoB ratings from the Cochrane reviews. Agreement between Cochrane and blinded external reviewers was assessed using weighted kappa (κ. RESULTS: In total, 109 trials included in 17 Cochrane reviews were assessed. Inter-rater reliability on the overall RoB assessment between Cochrane review authors and blinded external reviewers was poor (κ  =  0.02, 95%CI: -0.06, 0.06]. Inter-rater reliability on individual domains of the RoB tool was poor (median κ  = 0.19, ranging from κ  =  -0.04 ("Other bias" to κ  =  0.62 ("Sequence generation". There was also no agreement (κ  =  -0.29, 95%CI: -0.81, 0.35] in the overall RoB assessment at the meta-analysis level. CONCLUSIONS: Risk of bias assessments of RCTs using the RoB tool are not consistent across different research groups. Poor agreement was not only demonstrated at the trial level but also at the meta-analysis level. Results have implications for decision making since different recommendations can be reached depending on the group analyzing the evidence. Improved guidelines to consistently apply the RoB tool and revisions to the tool for different health areas are needed.

  5. Do iatrogenic factors bias the placement of external ventricular catheters?--a single institute experience and review of the literature.

    Science.gov (United States)

    Woernle, Christoph M; Burkhardt, Jan-Karl; Bellut, David; Krayenbuehl, Niklaus; Bertalanffy, Helmut

    2011-01-01

    Placement of external ventricular drainage (EVD) catheters is the gold standard for managing acute hydrocephalus, but the range of complications varies in different studies. The objective of this present single institute study is to analyze iatrogenic factors, which may influence the EVD device placement and the patient's outcome. A total of 137 EVD placements in 120 patients at the University Hospital Zurich were analyzed retrospectively. Discriminative findings between the pre- and postoperative imaging were obtained and evaluated in detail with regards to the postoperative course, ventriculostomy-related infection, and acute neurological deterioration directly related to the EVD placement. These findings were correlated to iatrogenic factors including education level of the neurosurgeon and surgical setting. Overall EVD-related complication rate was 16.1%, including infection rate of 10.2%, catheter malplacement rate of 2.2%, and hemorrhage rate of 3.6%. Although not statistically significant, catheter-associated hemorrhages and malplacements were found mostly in primary EVD surgery, with a higher complication rate associated with junior residents as the performing surgeon. In contrast, ventriculostomy-related infection was most likely present in patients with more than one EVD placement and in patients treated by more experienced physicians. Complications related to EVD are common. The rate and character of the complication depends on the education level of the surgeon.

  6. Controlling metastable native point-defect populations in Cu(In,Ga)Se2 and Cu2ZnSnSe4 materials and solar cells through voltage-bias annealing

    Science.gov (United States)

    Teeter, G.; Harvey, S. P.; Johnston, S.

    2017-01-01

    This contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu2ZnSnSe4 (CZTSe), Cu(In,Ga)Se2 (CIGS), and CdS material properties and solar cell performance. To quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 °C to 215 °C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 °C for CIGS and 110 °C-215 °C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including

  7. Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se2 and Cu2ZnSnSe4 Materials and Solar Cells through Voltage-Bias Annealing

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

    2017-01-28

    This contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu2ZnSnSe4 (CZTSe), Cu(In,Ga)Se2 (CIGS), and CdS material properties and solar cell performance. To quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non

  8. Effect of bias voltage on the structural, optical and electrical properties of ZnO.Zr thin films%衬底偏压对ZnO:Zr薄膜结构及光电性能的影响

    Institute of Scientific and Technical Information of China (English)

    张化福

    2012-01-01

    以Zn:Zr(Zr片贴在金属Zn靶上面)为溅射靶材,利用直流反应磁控溅射法在Ar/O_2混合气氛中制备Zr掺杂ZnO(ZnO:Zr)薄膜.在制备ZnO:Zr薄膜时,衬底偏压在0~60V之间变化.研究结果表明,衬底偏压对薄膜的结构、光学及电学性能有很大影响.当衬底偏压从0增大到60V时,薄膜的平均光学透过率和平均折射率都单调增大,而薄膜的晶粒尺寸先增大后减小.ZnO:Zr薄膜电阻率的变化规律与晶粒尺寸相反.%Zr-doped ZnO thin films were fabricated in Ar/O2 mixture gas by DC reactive magne- tron sputtering from a Zn:Zr target where Zr chips were attached on the surface of the metallic Zn target. During the process of deposition, the substrate bias voltage ranges from 0 to 60 V. Re- sults indicate that the bias voltage plays an important role in the structure, optical and electrical properties of the deposited films. When the bias voltage increases from 0 to 60V, the average op- tical transmittance and refractive index of ZnO: Zr films monotoneously increase. However, the crystallite size increases initially and then decreases with increasing bias voltage. For the resistivi- ty of ZnO:Zr films, the variation is on the contrary.

  9. Experimental verification of an equivalent circuit for the characterization of electrothermal micropumps: high pumping velocities induced by the external inductance at driving voltages below 5 V.

    Science.gov (United States)

    Stubbe, Marco; Gyurova, Anna; Gimsa, Jan

    2013-02-01

    Electrothermal micropumps (ETμPs) use local heating to create conductivity and permittivity gradients in the pump medium. In the presence of such gradients, an external AC electric field influences smeared spatial charges in the bulk of the medium. When there is also a symmetry break, the field-charge interaction results in an effective volumetric force resulting in medium pumping. The advantages of the ETμP principle are the absence of moving parts, the opportunity to passivate all the pump structures, homogeneous pump-channel cross-sections, as well as force plateaus in broad frequency ranges. The ETμPs consisted of a DC-heating element and AC field electrodes arranged in a 1000 μm × 250 μm × 60 μm (length × width × height) channel. They were processed as platinum structures on glass carriers. An equivalent-circuit diagram allowed us to model the frequency-dependent pumping velocities of passivated and nonpassivated ETμPs, which were measured at medium conductivities up to 1.0 S/m in the 300 kHz to 52 MHz frequency range. The temperature distributions within the pumps were controlled by thermochromic beads. Under resonance conditions, an additional inductance induced a tenfold pump-velocity increase to more than 50 μm/s at driving voltages of 5 V(rms). A further miniaturization of the pumps is viewed as quite feasible.

  10. External quantum efficiency of p-i-n solar cells incorporating oligothiophene: Fullerene heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Seifert, Holger; Schueppel, Rico; Riede, Moritz K.; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany); Brier, Eduard; Reinold, Egon; Baeuerle, Peter [Institut fuer Organische Chemie II und Neue Materialien, Universitaet Ulm (Germany)

    2008-07-01

    We investigate organic p-i-n solar cells with an oligothiophene derivative as donor and Fullerene C{sub 60} as acceptor materials. This donor-acceptor heterojunction leads to solar cells with an open circuit voltage as high as 1.0 V and a reasonable power conversion efficiency of up to 3.4%. Measuring current-voltage characteristics under monochromatic illumination of low intensity (non-standard reporting conditions), we find a wavelength dependent fill factor of these photovoltaic devices. Furthermore, we determine the external quantum efficiency (EQE) from the photoresponse of these devices using a modulated monochromatic illumination on top of a white light bias as well as an external voltage bias. The EQE spectrum can be attributed to the spectrally different absorption of donor and acceptor. We discuss the dependence of the EQE spectrum from the applied external voltage with respect to the charge generation mechanism.

  11. Development of high-voltage pulse generator with variable amplitude and duration

    Science.gov (United States)

    Upadhyay, J.; Sharma, M. L.; Ahuja, Aakash B.; Navathe, C. P.

    2014-06-01

    A high voltage pulse generator with variable amplitude (100-3000 V) and duration (100-2000 μs) has been designed and developed. The variable duration pulse has been generated by adopting a simple and novel technique of varying the turn off delay time of a high voltage Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based switch by varying external gate resistance. The pulse amplitude is made variable by adjusting biasing supply of the high voltage switch. The high voltage switch has been developed using a MOSFET based stack of 3 kV rating with switching time of 7 ns.

  12. Enhanced thermal stability and mechanical properties of nitrogen deficient titanium aluminum nitride (Ti0.54Al0.46Ny) thin films by tuning the applied negative bias voltage

    Science.gov (United States)

    Calamba, K. M.; Schramm, I. C.; Johansson Jõesaar, M. P.; Ghanbaja, J.; Pierson, J. F.; Mücklich, F.; Odén, M.

    2017-08-01

    Aspects on the phase stability and mechanical properties of nitrogen deficient (Ti0.54Al0.46)Ny alloys were investigated. Solid solution alloys of (Ti,Al)N were grown by cathodic arc deposition. The kinetic energy of the impinging ions was altered by varying the substrate bias voltage from -30 V to -80 V. Films deposited with a high bias value of -80 V showed larger lattice parameter, finer columnar structure, and higher compressive residual stress resulting in higher hardness than films biased at -30 V when comparing their as-deposited states. At elevated temperatures, the presence of nitrogen vacancies and point defects (anti-sites and self-interstitials generated by the ion-bombardment during coating deposition) in (Ti0.54Al0.46)N0.87 influence the driving force for phase separation. Highly biased nitrogen deficient films have point defects with higher stability during annealing, which cause a delay of the release of the stored lattice strain energy and then accelerates the decomposition tendencies to thermodynamically stable c-TiN and w-AlN. Low biased nitrogen deficient films have retarded phase transformation to w-AlN, which results in the prolongment of age hardening effect up to 1100 °C, i.e., the highest reported temperature for Ti-Al-N material system. Our study points out the role of vacancies and point defects in engineering thin films with enhanced thermal stability and mechanical properties for high temperature hard coating applications.

  13. Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

    Science.gov (United States)

    Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

    2012-03-01

    High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

  14. Characterization of DBD Plasma Actuators Performance without External Flow . Part I; Thrust-Voltage Quadratic Relationship in Logarithmic Space for Sinusoidal Excitation

    Science.gov (United States)

    Ashpis, David E.; Laun, Matthew C.

    2016-01-01

    We present results of thrust measurements of Dielectric Barrier Discharge (DBD) plasma actuators. We have used a test setup, measurement, and data processing methodology that we developed in prior work. The tests were conducted with High Density Polyethylene (HDPE) actuators of three thicknesses. The applied voltage driving the actuators was a pure sinusoidal waveform. The test setup was suspended actuators with a partial liquid interface. The tests were conducted at low ambient humidity. The thrust was measured with an analytical balance and the results were corrected for anti-thrust to isolate the plasma generated thrust. Applying this approach resulted in smooth and repeatable data. It also enabled curve fitting that yielded quadratic relations between the plasma thrust and voltage in log-log space at constant frequencies. The results contrast power law relationships developed in literature that appear to be a rough approximation over a limited voltage range.

  15. 外加电压对沥青碳纤维/ABS树脂复合材料导电性的影响%INFLUENCE OF EXTERNAL VOLTAGE ON THE CONDUCTIVITY OF COMPOSITES COMPOSED OF CARBON FIBERS AND ABS RESIN

    Institute of Scientific and Technical Information of China (English)

    梁晓怿; 凌立成; 吕春祥; 刘朗

    2001-01-01

    通用级沥青碳纤维与ABS树脂通过单螺杆挤出机共混后模压成型, 所制复合材料的电阻率随材料中纤维添加量的增多而迅速降低.当复合材料中纤维添加量较少时,材料的电流电压关系不满足欧姆定律所描述的线性关系,材料电阻随外电压的增大而减小.随着纤维含量的增加,材料电流电压关系的线性度逐渐增大.当纤维含量达到40 wt%时,材料电阻不随外电压的增大而变化,材料满足欧姆定律.经外加高电压处理后,材料电阻率发生永久性降低,其电流电压关系的线性度提高.隧道跃迁理论能够较好地解释上述现象.%Conductive ABS resin composites filled with general pitch-based carbon fibers were fabricated by hot-press moulding after raw materials were preblended through a single screw extruder. The composite resistivity decreases with fibers content going up. And the electrical current displays non-linear dependence on the external voltage acted on composites and the resistance of composites varies down with the raise of voltage, which implies that the composites don't meet Ohm's Law. When fibers fraction increases, the linearity between current and voltage goes up correspondingly. For the sample containing fillers of 40 wt%, its resistance remains constant and it satisfies Ohm's Law very well. It is interesting that the high voltage can result in the permanent reduction of composite resistance. And the voltage, which makes the permanent reduction of composites resistance, goes up with the increase of fillers loading. Moreover, the linearity of current and voltage rises after composites were treated by high voltage. All these phenomena can be explained by quantum tunneling model the results of this paper provide a new method for improving the conductivity and stability to varied voltage of composites.

  16. Ion current rectification inversion in conic nanopores: nonequilibrium ion transport biased by ion selectivity and spatial asymmetry.

    Science.gov (United States)

    Yan, Yu; Wang, Lin; Xue, Jianming; Chang, Hsueh-Chia

    2013-01-28

    We show both theoretically and experimentally that the ion-selectivity of a conic nanopore, as defined by a normalized density of the surface charge, significantly affects ion current rectification across the pore. For weakly selective negatively charged pores, intra-pore ion transport controls the current and internal ion enrichment/depletion at positive/reverse biased voltage (current enters/leaves through the tip, respectively), which is responsible for current rectification. For strongly selective negatively charged pores under positive bias, the current can be reduced by external field focusing and concentration depletion at the tip at low ionic strengths and high voltages, respectively. These external phenomena produce a rectification inversion for highly selective pores at high (low) voltage (ionic strength). With an asymptotic analysis of the intra-pore and external ion transport, we derive simple scaling laws to quantitatively capture empirical and numerical data for ion current rectification and rectification inversion of conic nanopores.

  17. Effect of applied bias voltage on corrosion-resistance for TiC{sub 1-x}N{sub x} and Ti{sub 1-x}Nb{sub x}C{sub 1-y}N{sub y} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Amaya, C. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Laboratorio de Recubrimientos Duros DT-ASTIN SENA, Cali (Colombia); Yate, L. [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Aperador, W.; Zambrano, G.; Gomez, M.E. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Alvarado-Rivera, J.; Munoz-Saldana, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro (Mexico); Prieto, P. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Centro de Excelencia en Nuevos Materiales, Calle 13 100-00 Edificio 320, espacio 1026, Cali (Colombia)

    2010-02-15

    Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and 'impurities' of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

  18. Electric control of exchange bias training.

    Science.gov (United States)

    Echtenkamp, W; Binek, Ch

    2013-11-01

    Voltage-controlled exchange bias training and tunability are introduced. Isothermal voltage pulses are used to reverse the antiferromagnetic order parameter of magnetoelectric Cr(2)O(3), and thus continuously tune the exchange bias of an adjacent CoPd film. Voltage-controlled exchange bias training is initialized by tuning the antiferromagnetic interface into a nonequilibrium state incommensurate with the underlying bulk. Interpretation of these hitherto unreported effects contributes to new understanding in electrically controlled magnetism.

  19. Electric Control of Exchange Bias Training

    Science.gov (United States)

    Echtenkamp, W.; Binek, Ch.

    2013-11-01

    Voltage-controlled exchange bias training and tunability are introduced. Isothermal voltage pulses are used to reverse the antiferromagnetic order parameter of magnetoelectric Cr2O3, and thus continuously tune the exchange bias of an adjacent CoPd film. Voltage-controlled exchange bias training is initialized by tuning the antiferromagnetic interface into a nonequilibrium state incommensurate with the underlying bulk. Interpretation of these hitherto unreported effects contributes to new understanding in electrically controlled magnetism.

  20. Child and adolescent internalizing and externalizing problems 12 months postburn : the potential role of preburn functioning, parental posttraumatic stress, and informant bias

    NARCIS (Netherlands)

    Egberts, M.R.; van de Schoot, R.; Boekelaar, A.; Hendrickx, H.; Geenen, R.; Van Loey, N.E.E.

    2016-01-01

    Adjustment after pediatric burn injury may be a challenge for children as well as their parents. This prospective study examined associations of internalizing and externalizing problems in children and adolescents 12 months postburn with preburn functioning, and parental acute and chronic posttrauma

  1. Friends' Knowledge of Youth Internalizing and Externalizing Adjustment: Accuracy, Bias, and the Influences of Gender, Grade, Positive Friendship Quality, and Self-Disclosure

    Science.gov (United States)

    Swenson, Lance P.; Rose, Amanda J.

    2009-01-01

    Some evidence suggests that close friends may be knowledgeable of youth's psychological adjustment. However, friends are understudied as reporters of adjustment. The current study examines associations between self- and friend-reports of internalizing and externalizing adjustment in a community sample of fifth-, eighth-, and eleventh-grade youth.…

  2. Effect of bias voltage and temperature on lifetime of wireless neural interfaces with Al ₂O₃ and parylene bilayer encapsulation.

    Science.gov (United States)

    Xie, Xianzong; Rieth, Loren; Caldwell, Ryan; Negi, Sandeep; Bhandari, Rajmohan; Sharma, Rohit; Tathireddy, Prashant; Solzbacher, Florian

    2015-02-01

    The lifetime of neural interfaces is a critical challenge for chronic implantations, as therapeutic devices (e.g., neural prosthetics) will require decades of lifetime. We evaluated the lifetime of wireless Utah electrode array (UEA) based neural interfaces with a bilayer encapsulation scheme utilizing a combination of alumina deposited by Atomic Layer Deposition (ALD) and parylene C. Wireless integrated neural interfaces (INIs), equipped with recording version 9 (INI-R9) ASIC chips, were used to monitor the encapsulation performance through radio-frequency (RF) power and telemetry. The wireless devices were encapsulated with 52 nm of ALD Al2O3 and 6 μm of parylene C, and tested by soaking in phosphate buffered solution (PBS) at 57 °C for 4× accelerated lifetime testing. The INIs were also powered continuously through 2.765 MHz inductive power and forward telemetry link at unregulated 5 V. The bilayer encapsulated INIs were fully functional for ∼35 days (140 days at 37 °C equivalent) with consistent power-up frequencies (∼910 MHz), stable RF signal (∼-75 dBm), and 100 % command reception rate. This is ∼10 times of equivalent lifetime of INIs with parylene-only encapsulation (13 days) under same power condition at 37 °C. The bilayer coated INIs without continuous powering lasted over 1860 equivalent days (still working) at 37 °C. Those results suggest that bias stress is a significant factor to accelerate the failure of the encapsulated devices. The INIs failed completely within 5 days of the initial frequency shift of RF signal at 57 °C, which implied that the RF frequency shift is an early indicator of encapsulation/device failure.

  3. Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

    2010-04-15

    The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Electrolytes as Cathode Interlayers in Inverted Organic Solar Cells: Influence of the Cations on Bias-Dependent Performance.

    Science.gov (United States)

    Li, Yaru; Liu, Xiaohui; Li, Xiaodong; Zhang, Wenjun; Xing, Feifei; Fang, Junfeng

    2017-03-08

    The performance of organic solar cells (OSCs) with edetate electrolytes depends on external bias, and ions are speculated to be responsible for this phenomenon. To clarify the detailed relationship between the ions of electrolytes and the bias-dependent behaviors of devices, this work introduces four edetate cathode interlayers (EDTA-X, X = nH(4-n)Na, n = 0, 1, 2, and 4) containing different kinds and number of cations into inverted OSCs. The results show that the devices initial and saturated (after external bias treatment) power conversion efficiencies (PCEs) both decrease with the increase in the number of H(+). Moreover, the bias-dependent degrees increase with the increase in H(+) number; with that, the PCE increment of EDTA-4H device is 53.4%, while that of the EDTA-4Na device is almost unchanged. The electrical impedance spectroscopy and capacitance-voltage tests reveal that the interfacial recombination is greatly suppressed by external bias treatment, which is not a result of the decreased density of defect states. The results indicate that the ion's motion, specifically the H(+) motion, under external electrical field is responsible for the bias-dependent behavior, which is conducive to the design of new efficient electrolytic interlayers without bias-dependent performance.

  5. 国内媒介对外传播的偏向及引导路径研究%Research on the bias of the external communication of domestic media and the guiding path

    Institute of Scientific and Technical Information of China (English)

    丁慧民; 孙金晶

    2016-01-01

    In order to study the external communication of domestic media in international multi-net-work media environment and achieve the discourse power of the domestic media in such environment,this paper analyzed the cause of external communication bias of domestic media on the basis of its influence by combing the principles of communication theory.In addition,the guiding paths were proposed:communi-cation content innovation,network leadership system improvement,social platform construction,skillful use of the elite and the monitoring of network public opinion.%为研究国际多元网络媒介环境中国内媒介对外传播问题,实现国内媒介在国际网络环境中的话语权,结合传播学原理,在分析国内媒介对外传播偏向影响的基础上分析当下多元网络媒介环境中国内媒介对外传播偏向产生的原因,提出了引导路径:创新传播内容、完善网络领导体制、搭建社会化平台、巧用精英人物和监控网络舆情。

  6. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  7. Distinguishing Selection Bias and Confounding Bias in Comparative Effectiveness Research.

    Science.gov (United States)

    Haneuse, Sebastien

    2016-04-01

    Comparative effectiveness research (CER) aims to provide patients and physicians with evidence-based guidance on treatment decisions. As researchers conduct CER they face myriad challenges. Although inadequate control of confounding is the most-often cited source of potential bias, selection bias that arises when patients are differentially excluded from analyses is a distinct phenomenon with distinct consequences: confounding bias compromises internal validity, whereas selection bias compromises external validity. Despite this distinction, however, the label "treatment-selection bias" is being used in the CER literature to denote the phenomenon of confounding bias. Motivated by an ongoing study of treatment choice for depression on weight change over time, this paper formally distinguishes selection and confounding bias in CER. By formally distinguishing selection and confounding bias, this paper clarifies important scientific, design, and analysis issues relevant to ensuring validity. First is that the 2 types of biases may arise simultaneously in any given study; even if confounding bias is completely controlled, a study may nevertheless suffer from selection bias so that the results are not generalizable to the patient population of interest. Second is that the statistical methods used to mitigate the 2 biases are themselves distinct; methods developed to control one type of bias should not be expected to address the other. Finally, the control of selection and confounding bias will often require distinct covariate information. Consequently, as researchers plan future studies of comparative effectiveness, care must be taken to ensure that all data elements relevant to both confounding and selection bias are collected.

  8. Media Bias

    OpenAIRE

    Sendhil Mullainathan; Andrei Shleifer

    2002-01-01

    There are two different types of media bias. One bias, which we refer to as ideology, reflects a news outlet's desire to affect reader opinions in a particular direction. The second bias, which we refer to as spin, reflects the outlet's attempt to simply create a memorable story. We examine competition among media outlets in the presence of these biases. Whereas competition can eliminate the effect of ideological bias, it actually exaggerates the incentive to spin stories.

  9. Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings

    OpenAIRE

    2007-01-01

    We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tu...

  10. Experimental phase diagram of zero-bias conductance peaks in superconductor/semiconductor nanowire devices.

    Science.gov (United States)

    Chen, Jun; Yu, Peng; Stenger, John; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Stanescu, Tudor D; Frolov, Sergey M

    2017-09-01

    Topological superconductivity is an exotic state of matter characterized by spinless p-wave Cooper pairing of electrons and by Majorana zero modes at the edges. The first signature of topological superconductivity is a robust zero-bias peak in tunneling conductance. We perform tunneling experiments on semiconductor nanowires (InSb) coupled to superconductors (NbTiN) and establish the zero-bias peak phase in the space of gate voltage and external magnetic field. Our findings are consistent with calculations for a finite-length topological nanowire and provide means for Majorana manipulation as required for braiding and topological quantum bits.

  11. Analytical Bias Exceeding Desirable Quality Goal in 4 out of 5 Common Immunoassays: Results of a Native Single Serum Sample External Quality Assessment Program for Cobalamin, Folate, Ferritin, Thyroid-Stimulating Hormone, and Free T4 Analyses.

    Science.gov (United States)

    Kristensen, Gunn B B; Rustad, Pål; Berg, Jens P; Aakre, Kristin M

    2016-09-01

    We undertook this study to evaluate method differences for 5 components analyzed by immunoassays, to explore whether the use of method-dependent reference intervals may compensate for method differences, and to investigate commutability of external quality assessment (EQA) materials. Twenty fresh native single serum samples, a fresh native serum pool, Nordic Federation of Clinical Chemistry Reference Serum X (serum X) (serum pool), and 2 EQA materials were sent to 38 laboratories for measurement of cobalamin, folate, ferritin, free T4, and thyroid-stimulating hormone (TSH) by 5 different measurement procedures [Roche Cobas (n = 15), Roche Modular (n = 4), Abbott Architect (n = 8), Beckman Coulter Unicel (n = 2), and Siemens ADVIA Centaur (n = 9)]. The target value for each component was calculated based on the mean of method means or measured by a reference measurement procedure (free T4). Quality specifications were based on biological variation. Local reference intervals were reported from all laboratories. Method differences that exceeded acceptable bias were found for all components except folate. Free T4 differences from the uncommonly used reference measurement procedure were large. Reference intervals differed between measurement procedures but also within 1 measurement procedure. The serum X material was commutable for all components and measurement procedures, whereas the EQA materials were noncommutable in 13 of 50 occasions (5 components, 5 methods, 2 EQA materials). The bias between the measurement procedures was unacceptably large in 4/5 tested components. Traceability to reference materials as claimed by the manufacturers did not lead to acceptable harmonization. Adjustment of reference intervals in accordance with method differences and use of commutable EQA samples are not implemented commonly. © 2016 American Association for Clinical Chemistry.

  12. Effects of negative bias voltage on tribological properties of W-C-N thin films by magnetron sputtering%基体负偏压对W-C-N薄膜摩擦磨损性能的影响

    Institute of Scientific and Technical Information of China (English)

    喻利花; 王蕊; 许俊华

    2013-01-01

    采用多靶反应磁控溅射设备制备了一系列不同基体负偏压的W-C-N复合膜.采用X射线衍射仪、扫描电镜、能量色散谱仪、纳米压痕仪和摩擦磨损仪对薄膜进行表征.结果表明:当负偏压小于等于80 V时,薄膜表现出六方α-WCN相结构,增加到120 V时,转变为立方β-WCN相,薄膜硬度、弹性模量和膜基结合力出现对应最佳性能点的峰值;随着负偏压的增大,薄膜质量得到改善,磨损率和摩擦系数明显降低,负偏压达到200 V时,磨损率和摩擦系数分别出现最低值4.22×10-6 mm3·N-1 ·m-1和0.27;薄膜的磨损机制主要是磨粒磨损.%W-C-N nano-composite films were fabricated by reactive magnetron sputtering technique with different negative bias voltage (Vb) Microstructure and properties of the films were investigated by X-ray diffraction, scan electron microscopy, energy dispersive spectrometer, nano-indentor and tribometer. The results show that hexagonal a-WCN phase occurs in the films as Vb is lower than or equal to 80 V. However, as Vb further increases to 120 V, β-WCN forms. Raising Vb leads to increasing of hardness, elastic modulus and binding strength of the films to peak valuse. The inerease of Vb results in improvement of surface quality and decrease of friction coefficient and wear rate for the W-C-N films. As Vb increases to 120 V, the films get the minimum wear rate and coefficient of friction , which are 4. 22 ×10-6 mm3 ·N-1·m-1 and 0. 27, respectively. Abrasive wear is the main wear mechanism.

  13. Intergroup bias.

    Science.gov (United States)

    Hewstone, Miles; Rubin, Mark; Willis, Hazel

    2002-01-01

    This chapter reviews the extensive literature on bias in favor of in-groups at the expense of out-groups. We focus on five issues and identify areas for future research: (a) measurement and conceptual issues (especially in-group favoritism vs. out-group derogation, and explicit vs. implicit measures of bias); (b) modern theories of bias highlighting motivational explanations (social identity, optimal distinctiveness, uncertainty reduction, social dominance, terror management); (c) key moderators of bias, especially those that exacerbate bias (identification, group size, status and power, threat, positive-negative asymmetry, personality and individual differences); (d) reduction of bias (individual vs. intergroup approaches, especially models of social categorization); and (e) the link between intergroup bias and more corrosive forms of social hostility.

  14. External Force Damage Simulation of Submarine High-voltage Cable Based on Distributed Fiber Optic Sensor Technology%基于分布式光纤传感技术的高压海底电缆外力损坏仿真

    Institute of Scientific and Technical Information of China (English)

    陆莹; 黄辉

    2012-01-01

    高压海底电缆的安全稳定运行对于海上能源的开发具有重要的作用,海缆电缆的损坏主要由外力引起,针对分布式光纤传感器在线监测高压海底电缆运行状况的方法,利用有限元软件ANSYS建立XLPE高压海底电缆模型,仿真分析海底电缆受到外力损坏时,内部物理量的变化,为分布式光纤传感器在线监测高压海底电缆运行状态提供参考。%Safety and stable operation of submarine high-voltage cable has played an important role in the development of Marine energy. However, submarine high-voltage cable was mainly damaged by external forces. According to the method for operation state of submarine high-voltage cable using on-line monitoring technology based on distributed fiber optic sensor, the model of the XLPE submarine high-voltage cable was gained by using finite element software ANSYS. Then, based on the model, the change of internal physical quantities were researched ,when submarine high-voltage cable was damaged by external force, with the function to provide the practical reference for running state of submarine high-voltage cable monitoring on-line based on distributed fiber optic sensor.

  15. Self-bias Dependence on Process Parameters in Asymmetric Cylindrical Coaxial Capacitively Coupled Plasma

    CERN Document Server

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Phillips, L; Vušković, L

    2015-01-01

    An rf coaxial capacitively coupled Ar/Cl2 plasma is applied to processing the inner wall of superconducting radio frequency cavities. A dc self-bias potential is established across the inner electrode sheath due to the surface area difference between inner and outer electrodes of the coaxial plasma. The self-bias potential measurement is used as an indication of the plasma sheath voltage asymmetry. The understanding of the asymmetry in sheath voltage distribution in coaxial plasma is important for the modification of the inner surfaces of three dimensional objects. The plasma sheath voltages were tailored to process the outer wall by providing an additional dc current to the inner electrode with the help of an external dc power supply. The dc self-bias potential is measured for different diameter electrodes and its variation on process parameters such as gas pressure, rf power and percentage of chlorine in the Ar/Cl2 gas mixture is studied. The dc current needed to overcome the self-bias potential to make it ...

  16. High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Gui, Y. S.; Bai, L. H.; Hu, C.-M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Xiao, Y.; Guo, H. [Department of Physics, Center for the Physics of Materials, McGill University, Montreal, Quebec H3A 2T8 (Canada); Hemour, S.; Zhao, Y. P.; Wu, K. [Ecole Polytechnique de Montreal, Montreal, Quebec H3T 1J4 (Canada); Houssameddine, D. [Everspin Technologies, 1347 N. Alma School Road, Chandler, Arizona 85224 (United States)

    2015-04-13

    In the absence of any external applied magnetic field, we have found that a magnetic tunnel junction (MTJ) can produce a significant output direct voltage under microwave radiation at frequencies, which are far from the ferromagnetic resonance condition, and this voltage signal can be increase by at least an order of magnitude by applying a direct current bias. The enhancement of the microwave detection can be explained by the nonlinear resistance/conductance of the MTJs. Our estimation suggests that optimized MTJs should achieve sensitivities for non-resonant broadband microwave detection of about 5000 mV/mW.

  17. Piezo Voltage Controlled Planar Hall Effect Devices

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K. W.; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  18. Piezo Voltage Controlled Planar Hall Effect Devices.

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  19. 负偏压离子鞘及气体压强影响表面波放电过程的粒子模拟%Particle-in-cell simulation on surface-wave discharge pro cess influenced by gas pressure and negative-biased voltage along ion sheath layer

    Institute of Scientific and Technical Information of China (English)

    陈兆权; 胡希伟; 殷志祥; 陈明功; 刘明海; 徐公林; 胡业林; 夏广庆; 宋晓; 贾晓芬

    2014-01-01

    Due to surface electromagnetic waves propagating along the dielectric-plasma interface, the application of surface-wave plasma (SWP) is limited in view of the fact that it is very difficult to realize metal sputtering by using negative-biased voltage in traditional SWP sources. Recently, this problem is overcome by a type of SWP source based on the guided wave in ion sheath layer driven by negative-biased voltage. And the plasma heating mechanism is originated from gas discharges excited by the local-enhanced electric field of surface plasmon polariton (SPP). However, the best discharge condition is not obtained because the influence factors affecting the discharge process studied is not clear. In this paper, the discharge mechanism of SWP ionization process influenced by gas pressure and negative-biased voltage along the ion sheath layer is investigated. The simulation method is by means of combining particle-in-cell (PIC) with Monte Carlo collision (MCC). Simulated results suggest that the values of negative-biased voltage and gas pressure can influence the thickness of ion sheath layer, the excitation of SPP, and the spatio-temporal conversion of wave mode, which further induces the different discharge performances. Moreover, the discussed analysis states that a better discharge performance can be obtained when approximately a negative-biased voltage of-200 V and a gas pressure of 40 Pa applied.%由于表面电磁波沿着介质-等离子体分界面传播,而很难通过对传统的表面波等离子体(SWP)源施加负偏压实现金属材料溅射,因此限制了SWP源的使用范围。近期,一种基于负偏压离子鞘导波的SWP源克服了这个问题,且其加热机理是表面等离激元(SPP)的局域增强电场激励气体放电产生。但是该SWP源放电过程的影响因素并未研究清晰,导致其最佳放电条件没有获得。本文采用粒子(PIC)和蒙特卡罗碰撞(MCC)相结合的模拟方法,探讨了负偏压离子

  20. Structure and Corrosion Resistance of Multi-layer Ti/TiN Films Prepared on Uranium by Arc Ion Plating Under Different Bias Voltages%偏压对铀表面多弧离子镀Ti/TiN多层膜的结构及抗腐蚀性能影响研究

    Institute of Scientific and Technical Information of China (English)

    刘天伟; 王小英; 江帆; 唐凯; 魏强

    2011-01-01

    Multi-layer Ti/TiN films were prepared on U and Si by using arc ion plating in different bias voltages. The microstructure and cross section morphology were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results indicate that the pulse bias not only affects the diffraction peak strength, but also induces a new Ti2 N phase. The multi-layer films grow layer by layer or by island expansion. As the bias voltage is increased, the directional crystals become fine, and the films become denser. Corrosion tests in 50 μg/g Cl~ solution indicate that the multilayer films are corroded by layers, which make it difficult for corrosion solution to reach the substrate. In this way the corrosion resistance is enhanced.%在不同偏压下,利用多弧离子镀技术在U和Si基体上制备了Ti/TiN多层薄膜.利用X射线衍射仪和扫描电镜对多层膜的组织结构和薄膜界面形貌进行了分析.研究表明:脉冲偏压不但影响多层膜物相各衍射峰的强度,还诱导新相Ti2N的出现.制备的多层膜呈“犬牙”交错的层状、柱状结构生长.随脉冲偏压的增加,柱状晶结构细化,薄膜变得更加致密.通过50 μg/g Cl-溶液腐蚀研究表明:Ti/TiN多层膜提高抗腐蚀性能源于层状失效,使得腐蚀介质到达基体更加困难,抗腐蚀性能优良.

  1. P Voltage Control of DFIG with Two-Mass-Shaft Turbine Model Under Utility Voltage Disturbance

    Directory of Open Access Journals (Sweden)

    Hengameh Kojooyan Jafari

    2016-06-01

    Full Text Available Doubly fed induction generators as a variable speed induction generators are applied instead of other electric machines in wind power plants to be connected to the grid with flexible controllers. Nowadays one of the most important subjects in wind farms is control of output power delivered to the grid under utility disturbance. In this paper, a doubly-fed induction generator with external rotor resistance and power converters model as an external voltage source having an adjustable phase and amplitude with an ordinary turbine connected to one mass shaft model and also two mass shaft model, is used and controlled by a P voltage controller to control the output active power for typical high and low wind speeds under two conditions of utility disturbance; while time of disturbance is not too long to change the domain of external rotor voltage source and also while time is long and the domain of external rotor voltage decreases.Simulation results show that P voltage controller can control output active power under 27% stator voltage drop down for typical low wind speed and 11% stator voltage drop down for typical high wind speed in long time disturbance while 80% of rotor external voltage domain drops down under short time utility disturbance.

  2. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  3. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  4. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  5. Cu Films Deposited by Unbalanced Magnetron Sputtering Enhanced by ICP and External Magnetic Field Confinement

    Institute of Scientific and Technical Information of China (English)

    QI Xuelian; REN Chunsheng; MA Tengcai; WANG Younian

    2008-01-01

    Metallic copper(Cu) films were deposited on a Si (100) substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confine-ment. The morphology and structure of the films were examined by scanning electron microscopy (SEM), atomic force microscope (AFM) and X-ray diffraction (XRD). The surface average rough-ness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.

  6. Influence of Negative Bias Voltage on Microparticles Morphology and Pixel Distribution of TiN Coatings Deposited by Multi-arc Ion Plating%负偏压对多弧离子镀TiN涂层大颗粒形貌及像素分布的影响

    Institute of Scientific and Technical Information of China (English)

    陈昌浩; 金永中; 刘东亮; 余学金

    2015-01-01

    Objective To analyze the microparticles ( MPs) morphology and pixel distribution of TiN coatings under different negative bias voltage (0, 100, 200, 300 and 400V), so as to provide basic data for industrial applications of multi-arc ion plating. Methods TiN coatings were deposited on hard alloy surface by multi-arc ion plating at different bias voltage. The surface morpholo- gy of TiN coatings was characterized by scanning electron microscope ( SEM) . At the same time, the amount and size of MPs were analyzed and the distribution of pixel was counted by ImageJ software. Results The amount of MPs on coating surface increased at first and then decreased with the increase of bias voltage. The maximum value was 1364 at 100 V and the minimum was 750 at 300 V. In addition, the area ratio of MPs on coating surface decreased gradually with the increase of bias voltage. The maximum value with worst mechanical properties was 6. 9% at 0 V and the minimum with best mechanical properties was 3. 3% at 400 V. The amount of light and dark pixel reached a maximum of 8302 at 300 V and a minimum of 4067 at 400 V. Conclusion The TiN coa-tings with best mechanical properties, low amount and small size of MPs were deposited at 400 V for 1 h with 30% duty cycle.%目的 分析不同负偏压下TiN涂层表面的大颗粒数量、尺寸和面积以及像素分布,为多弧离子镀技术的工业化应用提供基础数据. 方法 采用多弧离子镀膜技术,以脉冲负偏压为变量,在硬质合金表面沉积TiN涂层. 用扫描电子显微镜对涂层表面形貌进行表征,并利用ImageJ软件对表面大颗粒的数量和尺寸进行分析,对像素分布进行统计. 结果 随着负偏压的增加,涂层表面大颗粒的数量先增多,后减少. 负偏压为100 V时,大颗粒数量最多,为1364;负偏压为300 V时,大颗粒数量最少,为750. 此外随着负偏压的增加,大颗粒所占涂层面积比逐渐减小. 未加负偏压时,涂层表面大颗

  7. High Input Impedance Voltage-Mode Biquad Filter Using VD-DIBAs

    Directory of Open Access Journals (Sweden)

    W. Jaikla

    2014-09-01

    Full Text Available This paper deals with a single-input multiple-output biquadratic filter providing three functions (low-pass, high-pass and band-pass based on voltage differencing differential input buffered amplifier (VD-DIBA. The quality factor and pole frequency can be electronically tuned via the bias current. The proposed circuit uses two VD-DIBAs and two grounded capacitors without any external resistors, which is suitable to further develop into an integrated circuit. Moreover, the circuit possesses high input impedance, providing easy voltage-mode cascading. It is shown that the filter structure can be easily extended to multi-input filter without any additional components, providing also all-pass and band-reject properties. The PSPICE simulation and experimental results are included, verifying the key characteristics of the proposed filter. The given results agree well with the theoretical presumptions.

  8. A battery-based, low-noise voltage source

    Science.gov (United States)

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of ±15 and ±5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7×10-7 over 6.5 h and a noise level equal or smaller than 30 nV/√Hz is achieved.

  9. Voltage controlled spintronics device for logic applications.

    Energy Technology Data Exchange (ETDEWEB)

    Bader, S. D.; You, C.-Y.

    1999-09-03

    We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure--two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistor-like concepts and re-programmable logic gates based on VCR elements.

  10. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; vercation of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence th...

  11. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Parkes, C; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; verification of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence...

  12. Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

    Directory of Open Access Journals (Sweden)

    Chaichana Amornchai

    2017-01-01

    Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

  13. Joint voltages resulting from lightning currents.

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, William Arthur; Warne, Larry Kevin; Merewether, Kimball O.; Chen, Kenneth C.

    2007-03-01

    Simple formulas are given for the interior voltages appearing across bolted joints from exterior lightning currents. External slot and bolt inductances as well as internal slot and bolt diffusion effects are included. Both linear and ferromagnetic wall materials are considered. A useful simplification of the slot current distribution into linear stripline and cylindrical parts (near the bolts) allows the nonlinear voltages to be estimated in closed form.

  14. Radiatively heated high voltage pyroelectric crystal pulser

    Energy Technology Data Exchange (ETDEWEB)

    Antolak, A.J., E-mail: antolak@sandia.gov [Sandia National Laboratories, Livermore, CA 94550 (United States); Chen, A.X. [Sandia National Laboratories, Livermore, CA 94550 (United States); Leung, K.-N. [Sandia National Laboratories, Livermore, CA 94550 (United States); Nuclear Engineering Department, University of California, Berkeley (United States); Morse, D.H.; Raber, T.N. [Sandia National Laboratories, Livermore, CA 94550 (United States)

    2014-01-21

    Thin lithium tantalate pyroelectric crystals in a multi-stage pulser were heated by quartz lamps during their charging phase to generate high voltage pulses. The charging voltage was determined empirically based on the measured breakdown voltage in air and verified by the induced breakdown voltage of an external high voltage power supply. A four-stage pyroelectric crystal device generated pulse discharges of up to 86 kV using both quartz lamps (radiative) and thermoelectric (conductive) heating. Approximately 50 mJ of electrical energy was harvested from the crystals when radiatively heated in air, and up to 720 mJ was produced when the crystals were submerged in a dielectric fluid. It is anticipated that joule-level pulse discharges could be obtained by employing additional stages and optimizing the heating configuration.

  15. Advantages and limitations of transition voltage spectroscopy: A theoretical analysis

    NARCIS (Netherlands)

    Mirjani, F.; Thijssen, J.M.; Van der Molen, S.J.

    2011-01-01

    In molecular charge transport, transition voltage spectroscopy (TVS) holds the promise that molecular energy levels can be explored at bias voltages lower than required for resonant tunneling. We investigate the theoretical basis of this tool using a generic model. In particular, we study the length

  16. Dynamic range of low-voltage cascode current mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik; Shah, Peter Jivan

    1995-01-01

    Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use...

  17. Electrical characterization of Cu(In,Ga)Se{sub 2}-solar cells by voltage dependent time-resolved photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Maiberg, Matthias, E-mail: matthias.maiberg@physik.uni-halle.de; Spindler, Conrad; Jarzembowski, Enrico; Scheer, Roland

    2015-05-01

    Time-resolved photoluminescence (TRPL) is a promising method for the investigation of charge carrier dynamics and recombination kinetics in semiconductor devices. To characterize Cu(In,Ga)Se{sub 2} (CIGSe) solar cells, we measured TRPL for different applied external forward voltages. We show that the TRPL decay time increases with increasing voltage in case of a high excitation intensity. This result is valid for a wide range of excitation frequencies of the laser. By simulation of the measured transients we determined semiconductor parameters which allow fitting the experimental photoluminescence transients for different voltages. The deduced quantities are the lifetime for deep defect assisted Schockley-Read-Hall recombination, doping density and charge carrier mobilities of the solar cell's absorber layer with values of 10 ns, 2 × 10{sup 15} cm{sup −3} and 1 cm{sup 2} V{sup −1} s{sup −1}, respectively, for a standard CIGSe solar cell. We further studied the appearance of a photovoltage in TRPL experiments with single-photon-counting methods. By experimental results we show a dependence of the open circuit voltage on the laser repetition rate, which influences the TRPL decay. - Highlights: • Time-resolved photoluminescence on Cu(In,Ga)Se{sub 2}-solar for different bias voltages • Build up of a photovoltage that varies luminescence decay for open circuit conditions • Inhibition of luminescence decay for increasing bias forward voltages • Determination of charge carrier mobilities and minority carrier lifetime by simulations.

  18. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  19. Nanoscopic oxidation of p-type and un-doped Si (100) surfaces using un-externally biased atomic force microscope tips (AFM) in the presence of selected organic solvents

    Science.gov (United States)

    McCausland, Jeffrey; Withanage, Sajeevi; Mallik, Robert; Lyuksyutov, Sergei

    A conductive un-biased AFM tip oscillating above p-type or un-doped Si (100) treated with toluene, butan-2-ol, and propan-2-ol creates nanostructures ranging in height from 1-100 nm. The tip was oscillated in ambient conditions (30-70% Rel. Humidity) at frequencies in the 102 kHz range. It was repeatable with various concentrations of solvent in aqueous solution. It is suggested that mechanical oscillations of the AFM tip polarizes the solvent molecules deposited on the surface resulting in electron transfer from the tip to the surface followed by feature formation. This process effectively creates an electrochemical cell at the microscopic level and the miscibility of the solvents is the key to enabling the process. Species which ionize during the process may be consumed in irreversible reactions whereas the alcohols act as catalysts and are not consumed. The influence of boron defects in the Si substrates is also discussed. It appears that the observed oxidation is different from all other similar reported phenomena including local anodic oxidation, and chemo-mechanical lithographic techniques utilizing AFM.

  20. Linearity Limits of Biased 1337 Trap Detectors

    CERN Document Server

    Balling, Petr

    2015-01-01

    The upper power limit of linear response of light trap detectors was recently measured [2,3]. We have completed this measurement with test of traps with bias voltage at several visible wavelengths using silicon photodiodes Hamamatsu S1337 1010 and made a brief test of S5227 1010. Bias extends the linearity limit by factor of more than 10 for very narrow beams and more than 30 for wide beams [5]. No irreversible changes were detected even for the highest irradiance of 33 W/cm2 at 406nm. Here we present measurement of minimal bias voltage necessary for 99%, 99.8% and 99.95% linearity for several beam sizes.

  1. An investigation of breakdown voltage in AMTECs

    Science.gov (United States)

    Momozaki, Yoichi; El-Genk, Mohamed S.

    2002-01-01

    Experiments are conducted to investigate the DC electrical breakdown voltage in cesium vapor between two planner molybdenum electrodes, 1.6 cm in diameter, separated by a 0.5 mm gap, and relate the results to the potential electrical breakdown on the cathode side of Alkali Metal Thermal-to-Electric Converters (AMTECs). In the first set of experiments, in which the electrodes are kept at 560 and 650 K, while varying the cesium pressure from 0.71 to 29 Pa, when the cooler electrode is positively biased, breakdown occurs at ~500 V, but at 700 V when the cooler electrode is negatively biased. In the second set of experiments, in which the electrodes are held at 625 and 1100 K and the cesium pressure varied from 1.7 to 235 Pa, when the cooler electrode is positively biased, breakdown voltage is <4 V, but in excess of 400 V when the cooler electrode is negatively biased. Since the first ionization potential and the ionization rate constant of cesium are lower and higher, respectively, than for the sodium (5.14 V) and potassium (4.34 V) vapors in AMTECs, the DC electrical breakdown voltage in an AMTEC is expected to be higher than measured in this work for cesium vapor. .

  2. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  3. Auto bias control and bias hold circuit for IQ-modulator in flexible optical QAM transmitter with Nyquist filtering.

    Science.gov (United States)

    Kawakami, Hiroto; Kobayashi, Takayuki; Yoshida, Mitsuteru; Kataoka, Tomoyoshi; Miyamoto, Yutaka

    2014-11-17

    An Auto Bias Control (ABC) technique for the IQ-modulator of a flexible optical QAM transmitter is described. This technique can support various optical QAM signal formats with Nyquist filtering and electronic dispersion pre-compensation. 16, 32 and 64-QAM signals (21 Gbaud) are successfully generated, and all bias voltages are held to their optimum value even when signal format is changed.

  4. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  5. Low Voltage CMOS op-amp with Rail-to-Rail Input/Output Swing

    OpenAIRE

    Gopalaiah, SV; Shivaprasad, AP

    2004-01-01

    As the supply voltage to a standard CMOS op-amp is reduced, the input common mode range and the output swing get reduced drastically. Special biasing circuits have to be used to raise them up to rail-to-rail supply voltage. Three low voltage op-amps with new biasing circuits have been proposed in this paper and their performance evaluated. The op-amp design is focused on dynamic range and high drive capability.

  6. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  7. A random resistor network model of voltage trimming

    Energy Technology Data Exchange (ETDEWEB)

    Grimaldi, C [Laboratoire de Production Microtechnique, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Maeder, T [Laboratoire de Production Microtechnique, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Ryser, P [Laboratoire de Production Microtechnique, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Straessler, S [Laboratoire de Production Microtechnique, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland)

    2004-08-07

    In industrial applications, the controlled adjustment (trimming) of resistive elements via the application of high voltage pulses is a promising technique, with several advantages with respect to more classical approaches such as the laser cutting method. The microscopic processes governing the response to high voltage pulses depend on the nature of the resistor and on the interaction with the local environment. Here we provide a theoretical statistical description of voltage discharge effects on disordered composites by considering random resistor network models with different properties and processes due to the voltage discharge. We compare standard percolation results with biased percolation effects and provide a tentative explanation of the different scenarios observed during trimming processes.

  8. Attribution bias and social anxiety in schizophrenia

    Directory of Open Access Journals (Sweden)

    Amelie M. Achim

    2016-06-01

    Full Text Available Studies on attribution biases in schizophrenia have produced mixed results, whereas such biases have been more consistently reported in people with anxiety disorders. Anxiety comorbidities are frequent in schizophrenia, in particular social anxiety disorder, which could influence their patterns of attribution biases. The objective of the present study was thus to determine if individuals with schizophrenia and a comorbid social anxiety disorder (SZ+ show distinct attribution biases as compared with individuals with schizophrenia without social anxiety (SZ− and healthy controls. Attribution biases were assessed with the Internal, Personal, and Situational Attributions Questionnaire in 41 individual with schizophrenia and 41 healthy controls. Results revealed the lack of the normal externalizing bias in SZ+, whereas SZ− did not significantly differ from healthy controls on this dimension. The personalizing bias was not influenced by social anxiety but was in contrast linked with delusions, with a greater personalizing bias in individuals with current delusions. Future studies on attribution biases in schizophrenia should carefully document symptom presentation, including social anxiety.

  9. Awareness Reduces Racial Bias

    OpenAIRE

    2014-01-01

    Can raising awareness of racial bias subsequently reduce that bias? We address this question by exploiting the widespread media attention highlighting racial bias among professional basketball referees that occurred in May 2007 following the release of an academic study. Using new data, we confirm that racial bias persisted in the years after the study's original sample, but prior to the media coverage. Subsequent to the media coverage though, the bias completely disappeared. We examine poten...

  10. Influence of Discharge Parameters on Tuned Substrate Self-Bias in an Radio-Frequency Inductively Coupled Plasma

    Institute of Scientific and Technical Information of China (English)

    Ding Zhenfeng; Sun Jingchao; Wang Younian

    2005-01-01

    The tuned substrate self-bias in an rf inductively coupled plasma source is controlled by means of varying the impedance of an external LC network inserted between the substrate and the ground. The influencing parameters such as the substrate axial position, different coupling coils and inserted resistance are experimentally studied. To get a better understanding of the experimental results, the axial distributions of the plasma density, electron temperature and plasma potential are measured with an rf compensated Langmuir probe; the coil rf peak-to-peak voltage is measured with a high voltage probe. As in the case of changing discharge power, it is found that continuity, instability and bi-stability of the tuned substrate bias can be obtained by means of changing the substrate axial position in the plasma source or the inserted resistance. Additionally,continuity can not transit directly into bi-stability, but evolves via instability. The inductance of the coupling coil has a substantial effect on the magnitude and the property of the tuned substrate bias.

  11. Bias-field controlled phasing and power combination of gyromagnetic nonlinear transmission lines.

    Science.gov (United States)

    Reale, D V; Bragg, J-W B; Gonsalves, N R; Johnson, J M; Neuber, A A; Dickens, J C; Mankowski, J J

    2014-05-01

    Gyromagnetic Nonlinear Transmission Lines (NLTLs) generate microwaves through the damped gyromagnetic precession of the magnetic moments in ferrimagnetic material, and are thus utilized as compact, solid-state, frequency agile, high power microwave (HPM) sources. The output frequency of a NLTL can be adjusted by control of the externally applied bias field and incident voltage pulse without physical alteration to the structure of the device. This property provides a frequency tuning capability not seen in many conventional e-beam based HPM sources. The NLTLs developed and tested are mesoband sources capable of generating MW power levels in the L, S, and C bands of the microwave spectrum. For an individual NLTL the output power at a given frequency is determined by several factors including the intrinsic properties of the ferrimagnetic material and the transmission line structure. Hence, if higher power levels are to be achieved, it is necessary to combine the outputs of multiple NLTLs. This can be accomplished in free space using antennas or in a transmission line via a power combiner. Using a bias-field controlled delay, a transient, high voltage, coaxial, three port, power combiner was designed and tested. Experimental results are compared with the results of a transient COMSOL simulation to evaluate combiner performance.

  12. Attributional biases, paranoia, and depression in early psychosis.

    Science.gov (United States)

    Langdon, Robyn; Still, Megan; Connors, Michael H; Ward, Philip B; Catts, Stanley V

    2013-11-01

    Attributional biases to externalize blame for negative events (externalizing bias) and to target other people for blame (personalizing bias) may constitute a vulnerability to psychosis. However, most research to date has only examined attributional biases in chronic patients. We examined attributional style, paranoia, and depression in early psychosis patients to assess the primacy of attributional biases in psychosis. A quasi-experimental design was adopted to compare the attributional style of patients and controls. Correlates of attributional style were also examined. Early psychosis patients and age- and gender-matched healthy controls completed the 'Internal, Personal and Situational Attributions Questionnaire'. Paranoid tendencies, suspiciousness, and depression were also assessed in both groups, while severity of current symptoms was assessed in patients. A high proportion of patients had persecutory delusions. These patients, however, did not differ from controls in externalizing or personalizing bias. Whereas suspiciousness and persecutory delusions in patients associated with externalizing bias, no bias measures associated with paranoid tendencies in either patients or controls. Counter to the pattern seen for endogenous depression, depression in patients was associated with an increased tendency to attribute events to self and a decreased tendency to attribute events to circumstances. These preliminary findings raise doubts about the primacy of attributional biases in psychosis. The novel findings with regard to depression warrant further investigation and suggest that young people, who develop depression after the onset of psychosis, may experience a need to re-establish a sense of personal control over life events that appear unpredictable. © 2013 The British Psychological Society.

  13. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  14. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zheng; Chen, Wei

    2016-07-05

    A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

  15. Low-Voltage MOS Current Mode Logic Multiplexer

    Directory of Open Access Journals (Sweden)

    K. Gupta

    2013-04-01

    Full Text Available In this paper, a new low-voltage MOS current mode logic (MCML multiplexer based on the triple-tail cell concept is proposed. An analytical model for static parameters is formulated and is applied to develop a design approach for the proposed low-voltage MCML multiplexer. The delay of the proposed low-voltage MCML multiplexer is expressed in terms of the bias current and the voltage swing so that it can be traded off with the power consumption. The proposed low-voltage MCML multiplexer is analyzed for the three design cases namely high-speed, power-efficient, and low-power. Finally, a comparison in performance of the proposed low-voltage MCML multiplexer with the traditional MCML multiplexer is carried out for all the cases.

  16. External Otitis (Swimmer's Ear)

    Science.gov (United States)

    ... to Pneumococcal Vaccine Additional Content Medical News External Otitis (Swimmer's Ear) By Bradley W. Kesser, MD, Associate ... the Outer Ear Ear Blockages Ear Tumors External Otitis (Swimmer's Ear) Malignant External Otitis Perichondritis External otitis ...

  17. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  18. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  19. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  20. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    OpenAIRE

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar; Cecati, Carlo

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbala...

  1. Plasma response to transient high voltage pulses

    Indian Academy of Sciences (India)

    S Kar; S Mukherjee

    2013-07-01

    This review reports on plasma response to transient high voltage pulses in a low pressure unmagnetized plasma. Mainly, the experiments are reviewed, when a disc electrode (metallic and dielectric) is biased pulsed negative or positive. The main aim is to review the electron loss in plasmas and particle balance during the negative pulse electrode biasing, when the applied pulse width is less than the ion plasma period. Though the applied pulse width is less than the ion plasma period, ion rarefaction waves are excited. The solitary electron holes are reviewed for positive pulsed bias to the electrode. Also the excitation of waves (solitary electron and ion holes) is reviewed for a metallic electrode covered by a dielectric material. The wave excitation during and after the pulse withdrawal, excitation and propagation characteristics of various electrostatic plasma waves are reviewed here.

  2. Precise method for determining avalanche breakdown voltage of silicon photomultipliers

    Science.gov (United States)

    Chirikov-Zorin, I.

    2017-07-01

    A physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDErel) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDErel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts.

  3. Bias-dependent high saturation solar LBIC scanning of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vorster, F.J.; van Dyk, E.E. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2007-06-15

    A light beam-induced current measurement system that uses concentrated solar radiation as a beam probe to map spatially distributed defects on a solar cell has been developed and tested [F.J. Vorster, E.E. van Dyk, Rev. Sci. Instrum., submitted for review]. The induced current response from a flat plate EFG Si solar cell was mapped as a function of surface position and cell bias by using a solar light beam induced current (S-LBIC) mapping system while at the same time dynamically biasing the whole cell with an external voltage. This paper examines the issues relating to transient capacitive effects as well as the electrical behaviour of typical solar cell defect mechanisms under spot illumination. By examining the bias dependence of the S-LBIC maps, various defect mechanisms of photovoltaic (PV) cells under concentrated solar irradiance may be identified. The techniques employed to interpret the spatially distributed IV curves as well as initial results are discussed. (author)

  4. Voltage verification unit

    Science.gov (United States)

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  5. Optical voltage sensors: principle, problem and research proposal

    Science.gov (United States)

    Li, Changsheng

    2016-10-01

    Sensing principles and main problems to be solved for optical voltage sensors are briefly reviewed. Optical effects used for voltage sensing usually include electro-optic Pockels and Kerr effects, electro-gyration effect, elasto-optical effect, and electroluminescent effects, etc. In principle, typical optical voltage sensor is based on electro-optic Pockels crystals and closed-loop signal detection scheme. Main problems to be solved for optical voltage sensors include: how to remove influence of unwanted multiple optical effects on voltage sensing performance; how to select or develop a proper voltage sensing material and element; how to keep optical phase bias to be stable under temperature fluctuation and vibration; how to achieve dc voltage sensing, etc. In order to suppress the influence of unwanted optical effects and light beam coupling-related loss on voltage sensing signals, we may pay more attention to all-fiber and waveguide voltage sensors. Voltage sensors based on electroluminescent effects are also promising in some application fields due to their compact configuration, low cost and potential long-term reliability.

  6. "Virtual IED sensor" at an rf-biased electrode in low-pressure plasma

    Science.gov (United States)

    Bogdanova, M. A.; Lopaev, D. V.; Zyryanov, S. M.; Rakhimov, A. T.

    2016-07-01

    Energy distribution and the flux of the ions coming on a surface are considered as the key-parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) measurements at the treated surface during plasma processing are often hardly possible, there is an opportunity for virtual ones. This work is devoted to the possibility of such indirect IED and ion flux measurements at an rf-biased electrode in low-pressure rf plasma by using a "virtual IED sensor" which represents "in-situ" IED calculations on the absolute scale in accordance with a plasma sheath model containing a set of measurable external parameters. The "virtual IED sensor" should also involve some external calibration procedure. Applicability and accuracy of the "virtual IED sensor" are validated for a dual-frequency reactive ion etching (RIE) inductively coupled plasma (ICP) reactor with a capacitively coupled rf-biased electrode. The validation is carried out for heavy (Ar) and light (H2) gases under different discharge conditions (different ICP powers, rf-bias frequencies, and voltages). An EQP mass-spectrometer and an rf-compensated Langmuir probe (LP) are used to characterize plasma, while an rf-compensated retarded field energy analyzer (RFEA) is applied to measure IED and ion flux at the rf-biased electrode. Besides, the pulsed selfbias method is used as an external calibration procedure for ion flux estimating at the rf-biased electrode. It is shown that pulsed selfbias method allows calibrating the IED absolute scale quite accurately. It is also shown that the "virtual IED sensor" based on the simplest collisionless sheath model allows reproducing well enough the experimental IEDs at the pressures when the sheath thickness s is less than the ion mean free path λi (s λi), the difference between calculated and experimental IEDs due to ion collisions in the sheath is observed in the low energy range. The effect of electron impact ionization in the sheath on the origin and

  7. Diffusion voltage in polymer light emitting diodes measured with electric field induced second harmonic generation

    Science.gov (United States)

    Kristensen, P. K.; Rafaelsen, J.; Pedersen, T. G.; Pedersen, K.

    2005-12-01

    We apply electric field induced second harmonic (EFISH) to polymer light emitting diodes (PLEDs) and demonstrate the ability to determine the diffusion voltage in PLED devices. The EFISH signal is proportional to the square of the effective field, which is the sum of the diffusion voltage and the applied voltage. By minimizing the EFISH-signal as a function of the applied voltage, the diffusion voltage is determined by measuring the applied voltage that cancels out the diffusion voltage. The PLEDs are fabricated with indium tin oxide (ITO) as the hole injecting contact and two different electron injecting contacts, namely aluminum and calcium. The diffusion voltage originates from the rearranged charges caused by the difference in Fermi levels in the materials in the PLEDs. Different contacts will thus cause different diffusion voltages. We demonstrate here that the EFISH signal is proportional to the square of the effective field in both reverse and forward bias, and discuss the dependence on contact materials.

  8. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

    Science.gov (United States)

    Vizkelethy, G.; King, M. P.; Aktas, O.; Kizilyalli, I. C.; Kaplar, R. J.

    2017-08-01

    Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories' nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. The displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

  9. Nonlinear resonance converse magnetoelectric effect modulated by voltage for the symmetrical magnetoelectric laminates under magnetic and thermal loadings

    Science.gov (United States)

    Zhou, Hao-Miao; Liu, Hui; Zhou, Yun; Hu, Wen-Wen

    2016-12-01

    Based on the tri-layer symmetrical magnetoelectric laminates, a equivalent circuit for the nonlinear resonance converse magnetoelectric coupling effect is established. Because the nonlinear thermo-magneto-mechanical constitutive equations of magnetostrictive material were introduced, a converse magnetoelectric coefficient model was derived from the equivalent circuit, which can describe the influence of bias electric field, bias magnetic field and ambient temperature on the resonance converse magnetoelectric coupling effect. Especially, the model can well predict the modulation effect of bias electric field/voltage on the magnetism of magnetoelectric composite or the converse magnetoelectric coefficient, which is absolutely vital in applications. Both of the converse magnetoelectric coefficient and the resonance frequency predicted by the model have good agreements with the existing experimental results in qualitatively and quantitatively, and the validity of the model is confirmed. On this basis, according to the model, the nonlinear trends of the resonance converse magnetoelectric effect under different bias voltages, bias magnetic fields and ambient temperatures are predicted. From the results, it can be found that the bias voltage can effectively modulate the curve of the resonance converse magnetoelectric coefficient versus bias magnetic field, and then change the corresponding optimal bias magnetic field of the maximum converse magnetoelectric coefficient; with the increasing volume ratio of piezoelectric layers, the modulation effect of bias voltage becomes more obvious; under different bias magnetic fields, the modulation effect of bias voltage on the converse magnetoelectric effect has nonvolatility in a wide temperature region.

  10. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  11. Bias-dependent oscillatory electron transport of monatomic sulfur chains

    KAUST Repository

    Yu, Jing-Xin

    2012-01-01

    The bias-dependent oscillatory electron transport of monatomic sulfur chains sandwiched between gold electrodes is investigated with density functional theory and non-equilibrium Green\\'s function method. At zero bias, in contrast to the typical odd-even oscillations observed in most metallic chains, we find that the conductance oscillates with a period of four atoms. However, as the bias voltage is increased the current displays a two-atom periodicity. This emerges gradually, first for the longer chains and then, at voltages larger than 0.7 V, for lengths. The oscillatory behaviors are analyzed by the density of states and the energy-dependent and bias-dependent transmission coefficients. © 2012 American Institute of Physics.

  12. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  13. The physics of positively biased conductors surrounded by dielectrics in contact with a plasma

    Science.gov (United States)

    Hastings, Daniel E.; Chang, Patrick

    1989-01-01

    The physics of a positively biased conductor surrounded by dielectrics in contact with plasma is investigated. It is shown that because of the presence of secondary emission from the surrounding dielectrics, the voltage of the surfaces near the conductor has three solutions. The high- and low-voltage solutions are stable, while the intermediate-voltage solution is unstable. This theory is applied to explain the snapover effect observed on high-voltage solar arrays that involve the use of highly biased surfaces in contact with the space environment.

  14. First priciples simulations of a bias-dependent electrochemical cell

    CERN Document Server

    Pedroza, Luana S; Rocha, Alexandre Reily; Fernández-Serra, Marivi

    2016-01-01

    Understanding the local structure of liquid water at the interfaces of metallic electrodes is a key problem in aqueous-based electrochemistry. Notably the system is under an external potential bias, which makes the task of simulating this setup difficult. To correctly compute the effect of an external bias potential applied to electrodes, we combine density functional theory and non-equilibrium Green's functions methods. Our method now allows to explicitly consider an external applied bias, in direct correspondence to the experiments. In this work, we apply this methodology to study the electronic properties and atomic forces of one water molecule at the interface of gold electrodes. We find that, as expected, the water molecule is sensitive to the sign and magnitude of the applied bias.

  15. Low-voltage gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  16. CPI Bias in Korea

    Directory of Open Access Journals (Sweden)

    Chul Chung

    2007-12-01

    Full Text Available We estimate the CPI bias in Korea by employing the approach of Engel’s Law as suggested by Hamilton (2001. This paper is the first attempt to estimate the bias using Korean panel data, Korean Labor and Income Panel Study(KLIPS. Following Hamilton’s model with non­linear specification correction, our estimation result shows that the cumulative CPI bias over the sample period (2000-2005 was 0.7 percent annually. This CPI bias implies that about 21 percent of the inflation rate during the period can be attributed to the bias. In light of purchasing power parity, we provide an interpretation of the estimated bias.

  17. Bias in research.

    Science.gov (United States)

    Simundić, Ana-Maria

    2013-01-01

    By writing scientific articles we communicate science among colleagues and peers. By doing this, it is our responsibility to adhere to some basic principles like transparency and accuracy. Authors, journal editors and reviewers need to be concerned about the quality of the work submitted for publication and ensure that only studies which have been designed, conducted and reported in a transparent way, honestly and without any deviation from the truth get to be published. Any such trend or deviation from the truth in data collection, analysis, interpretation and publication is called bias. Bias in research can occur either intentionally or unintentionally. Bias causes false conclusions and is potentially misleading. Therefore, it is immoral and unethical to conduct biased research. Every scientist should thus be aware of all potential sources of bias and undertake all possible actions to reduce or minimize the deviation from the truth. This article describes some basic issues related to bias in research.

  18. Biasing vector network analyzers using variable frequency and amplitude signals

    Science.gov (United States)

    Nobles, J. E.; Zagorodnii, V.; Hutchison, A.; Celinski, Z.

    2016-08-01

    We report the development of a test setup designed to provide a variable frequency biasing signal to a vector network analyzer (VNA). The test setup is currently used for the testing of liquid crystal (LC) based devices in the microwave region. The use of an AC bias for LC based devices minimizes the negative effects associated with ionic impurities in the media encountered with DC biasing. The test setup utilizes bias tees on the VNA test station to inject the bias signal. The square wave biasing signal is variable from 0.5 to 36.0 V peak-to-peak (VPP) with a frequency range of DC to 10 kHz. The test setup protects the VNA from transient processes, voltage spikes, and high-frequency leakage. Additionally, the signals to the VNA are fused to ½ amp and clipped to a maximum of 36 VPP based on bias tee limitations. This setup allows us to measure S-parameters as a function of both the voltage and the frequency of the applied bias signal.

  19. Two-fluid biasing simulations of the large plasma device

    Science.gov (United States)

    Fisher, Dustin M.; Rogers, Barrett N.

    2017-02-01

    External biasing of the Large Plasma Device (LAPD) and its impact on plasma flows and turbulence are explored for the first time in 3D simulations using the Global Braginskii Solver code. Without external biasing, the LAPD plasma spontaneously rotates in the ion diamagnetic direction. The application of a positive bias increases the plasma rotation in the simulations, which show the emergence of a coherent Kelvin Helmholtz (KH) mode outside of the cathode edge with poloidal mode number m ≃6 . Negative biasing reduces the rotation in the simulations, which exhibit KH turbulence modestly weaker than but otherwise similar to unbiased simulations. Biasing either way, but especially positively, forces the plasma potential inside the cathode edge to a spatially constant, KH-stable profile, leading to a more quiescent core plasma than the unbiased case. A moderate increase in plasma confinement and an associated steepening of the profiles are seen in the biasing runs. The simulations thus show that the application of external biasing can improve confinement while also driving a Kelvin-Helmholtz instability. Ion-neutral collisions have only a weak effect in the biased or unbiased simulations.

  20. On commercial media bias

    OpenAIRE

    Germano, Fabrizio

    2008-01-01

    Within the spokes model of Chen and Riordan (2007) that allows for non-localized competition among arbitrary numbers of media outlets, we quantify the effect of concentration of ownership on quality and bias of media content. A main result shows that too few commercial outlets, or better, too few separate owners of commercial outlets can lead to substantial bias in equilibrium. Increasing the number of outlets (commercial and non-commercial) tends to bring down this bias; but the strongest ef...

  1. Interpretation biases in paranoia.

    Science.gov (United States)

    Savulich, George; Freeman, Daniel; Shergill, Sukhi; Yiend, Jenny

    2015-01-01

    Information in the environment is frequently ambiguous in meaning. Emotional ambiguity, such as the stare of a stranger, or the scream of a child, encompasses possible good or bad emotional consequences. Those with elevated vulnerability to affective disorders tend to interpret such material more negatively than those without, a phenomenon known as "negative interpretation bias." In this study we examined the relationship between vulnerability to psychosis, measured by trait paranoia, and interpretation bias. One set of material permitted broadly positive/negative (valenced) interpretations, while another allowed more or less paranoid interpretations, allowing us to also investigate the content specificity of interpretation biases associated with paranoia. Regression analyses (n=70) revealed that trait paranoia, trait anxiety, and cognitive inflexibility predicted paranoid interpretation bias, whereas trait anxiety and cognitive inflexibility predicted negative interpretation bias. In a group comparison those with high levels of trait paranoia were negatively biased in their interpretations of ambiguous information relative to those with low trait paranoia, and this effect was most pronounced for material directly related to paranoid concerns. Together these data suggest that a negative interpretation bias occurs in those with elevated vulnerability to paranoia, and that this bias may be strongest for material matching paranoid beliefs. We conclude that content-specific biases may be important in the cause and maintenance of paranoid symptoms.

  2. Evaluation of fecal recovering and long term bias of internal and external markers in a digestion assay with cattle Recuperação fecal e vício de tempo longo de indicadores internos e externos em ensaio de digestão com bovinos

    Directory of Open Access Journals (Sweden)

    Cláudia Batista Sampaio

    2011-01-01

    Full Text Available The objective of this work was to estimate the total recovering and the long term bias of the estimates of fecal excretion using the external markers chromic oxide and titanium dioxide and internal markers indigestible dry matter (iDM, indigestible neutral detergent fiber (iNDF and indigestible acid detergent fiber (iADF in a digestion assay with cattle fed different diets. Fourteen F1 Red Angus x Nellore averaging 12 months and 287 kg were used. The animals were fed with elephant grass silage, corn silage or signal grass hay and supplemented or not with 20% of concentrate. The experiment consisted of two 13-days experimental periods according to a 2 x 2 Latin square design with seven squares. The animals received 10 g/d of chromic oxide and titanium dioxide through esophageal sounder. There was no effect of forage, concentrate or their interaction on fecal recovering of external and internal markers. The average fecal recovering of chromic oxide and titanium dioxide were 99.50% and 101.95%, respectively. iDM, iNDF and iADF presented average fecal recovering of 99.02%, 98.87% and 102.07%, respectively. For all markers the fecal recovering was found to be 100% and all of them presented no long term bias. However, higher precision was observed for fecal excretion estimates obtained with internal markers.Objetivou-se estimar a recuperação total e o vício de tempo longo das estimativas de excreção fecal obtidas com os indicadores externos óxido crômico e dióxido de titânio e com os indicadores internos matéria seca indigestível (MSi, fibra em detergente neutro indigestível (FDNi e fibra em detergente ácido indigestível (FDAi em ensaio de digestão com bovinos alimentados com diferentes dietas. Foram utilizados 14 novilhos F1 Red Angus x Nelore, não-castrados, com idade e peso médios de 12 meses e 287 kg. Os animais foram alimentados com silagem de capim-elefante, silagem de milho ou feno de capim-braquiária, suplementados ou n

  3. Implementation of an outline of transformer induced voltage tests

    Directory of Open Access Journals (Sweden)

    Orestes Hernández Areu

    2010-02-01

    Full Text Available The results of the developed work for the implementation of the induced voltage test to be applied to single phase distribution transformers in the Researches and Electroenergetic Tests Center (CIPEL of Cuba, are presented, The test outline was obtained starting from the employment of a motor - generator group, with an external voltage regulator and using a frequency converter to obtain the necessary frequency for this type of test.

  4. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  5. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  6. Zero-voltage nondegenerate parametric mode in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig

    1976-01-01

    A new parametric mode in a Josephson tunnel junction biased in the zero-voltage mode is suggested. It is a nondegenerate parametric excitation where the junction plasma resonance represents the input circuit, and a junction geometrical resonance represents the idler circuit. This nondegenerate mo...... for such a coupling. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  7. Control of ion energy and angular distributions using voltage waveform

    Energy Technology Data Exchange (ETDEWEB)

    Rauf, S.

    1999-07-01

    A number of plasma-aided microelectronics manufacturing processes sensitively depend on the ion characteristics at the substrate, in particular the ion energy (IEDF) and angular (IADF) distribution functions. The outcome of these processes can be much more precisely controlled if one has direct control over the IEDFs and IADFs. Past studies have explored the influence of rb bias voltage amplitude and frequency, inductive power deposition and gas pressure on the ion characteristics at the substrate. The factor that influences the ion dynamics most is however the time-dependent sheath voltage and, as demonstrated in this paper, sheath voltage can be accurately controlled using the rf bias voltage waveform. In this paper, the authors computationally examine the influence of the rf bias voltage waveform on the IEDFs and IADFs at the substrate in an inductively coupled plasma (ICP) reactor. This study has been conducted using a coupled set of the Hybrid Plasma Equipment Model (HPEM) and a circuit model, and the Plasma Chemistry Monte Carlo Simulation (PCMCS).

  8. Dielectric-spectroscopy approach to ferrofluid nanoparticle clustering induced by an external electric field.

    Science.gov (United States)

    Rajnak, Michal; Kurimsky, Juraj; Dolnik, Bystrik; Kopcansky, Peter; Tomasovicova, Natalia; Taculescu-Moaca, Elena Alina; Timko, Milan

    2014-09-01

    An experimental study of magnetic colloidal particles cluster formation induced by an external electric field in a ferrofluid based on transformer oil is presented. Using frequency domain isothermal dielectric spectroscopy, we study the influence of a test cell electrode separation distance on a low-frequency relaxation process. We consider the relaxation process to be associated with an electric double layer polarization taking place on the particle surface. It has been found that the relaxation maximum considerably shifts towards lower frequencies when conducting the measurements in the test cells with greater electrode separation distances. As the electric field intensity was always kept at a constant value, we propose that the particle cluster formation induced by the external ac electric field accounts for that phenomenon. The increase in the relaxation time is in accordance with the Schwarz theory of electric double layer polarization. In addition, we analyze the influence of a static electric field generated by dc bias voltage on a similar shift in the relaxation maximum position. The variation of the dc electric field for the hysteresis measurements purpose provides understanding of the development of the particle clusters and their decay. Following our results, we emphasize the utility of dielectric spectroscopy as a simple, complementary method for detection and study of clusters of colloidal particles induced by external electric field.

  9. Graphene nanoribbon devices at high bias

    Science.gov (United States)

    Han, Melinda Y.; Kim, Philip

    2014-02-01

    We present the electron transport in graphene nanoribbons (GNRs) at high electric bias conduction. When graphene is patterned into a few tens of nanometer width of a ribbon shape, the carriers are confined to a quasi-one-dimensional (1D) system. Combining with the disorders in the system, this quantum confinement can lead into a transport gap in the energy spectrum of the GNRs. Similar to CNTs, this gap depends on the width of the GNR. In this review, we examine the electronic properties of lithographically fabricated GNRs, focusing on the high bias transport characteristics of GNRs as a function of density tuned by a gate voltage. We investigate the transport behavior of devices biased up to a few volts, a regime more relevant for electronics applications. We find that the high bias transport behavior in this limit can be described by hot electron scattered by the surface phonon emission, leading to a carrier velocity saturation. We also showed an enhanced current saturation effect in the GNRs with an efficient gate coupling. This effect results from the introduction of the charge neutrality point into the channel, and is similar to pinch-off in MOSFET devices. We also observe that heating effects in graphene at high bias are significant.

  10. The External Degree.

    Science.gov (United States)

    Houle, Cyril O.

    This book examines the external degree in relation to the extremes of attitudes, myths, and data. Emphasis is placed on the emergence of the American external degree, foreign external-degree programs, the purpose of the external degree, the current scene, institutional issues, and problems of general policy. (MJM)

  11. Voltage Mode Universal Biquad Using CCCII

    Directory of Open Access Journals (Sweden)

    Ashish Ranjan

    2011-01-01

    Full Text Available This paper proposes a multi-input single-output (MISO second-order active-C voltage mode (VM universal filter using two second-generation current-controlled current conveyors (CCCIIs and two equal-valued capacitors. The proposed circuit realizes low pass, band pass, high pass, all pass, and notch responses from the same topology. The filter uses-minimum number of passive components and no resistor which is suitable for IC Design. The filter enjoys low-sensitivity performance and exhibits electronic and orthogonal tunability of pole frequency (0 and quality factor (0 via bias current of CCCIIs. PSPICE simulation results confirm the theory.

  12. Political bias is tenacious.

    Science.gov (United States)

    Ditto, Peter H; Wojcik, Sean P; Chen, Eric Evan; Grady, Rebecca Hofstein; Ringel, Megan M

    2015-01-01

    Duarte et al. are right to worry about political bias in social psychology but they underestimate the ease of correcting it. Both liberals and conservatives show partisan bias that often worsens with cognitive sophistication. More non-liberals in social psychology is unlikely to speed our convergence upon the truth, although it may broaden the questions we ask and the data we collect.

  13. Biases in categorization

    NARCIS (Netherlands)

    Das-Smaal, E.A.

    1990-01-01

    On what grounds can we conclude that an act of categorization is biased? In this chapter, it is contended that in the absence of objective norms of what categories actually are, biases in categorization can only be specified in relation to theoretical understandings of categorization. Therefore, the

  14. Adaptive coordinated control of engine speed and battery charging voltage

    Institute of Scientific and Technical Information of China (English)

    Jiangyan ZHANG; Xiaohong JIAO

    2008-01-01

    In this paper, the control problem of auxiliary power unit (APU) for hybrid electric vehicles is investigated. An adaptive controller is provided to achieve the coordinated control between the engine speed and the battery charging voltage. The proposed adaptive coordinated control laws for the throttle angle of the engine and the voltage of the power-converter can guarantee not only the asymptotic tracking performance of the engine speed and the regulation of the battery charging voltage, but also the robust stability of the closed loop system under external load changes. Simulation results are given to verify the performance of the proposed adaptive controller.

  15. Summary of transient high-voltage calculations for the FRX-C experiment

    Energy Technology Data Exchange (ETDEWEB)

    Kewish, R.W. Jr.; Rej, D.J.

    1982-06-01

    Calculations of the electrical circuit equations are performed over a wide range of parameters corresponding to the FRX-C field-reversed THETA-pinch experiment at Los Alamos. Without any plasma or external damping, serious voltage doubling and quadrupling of the main capacitor bank charge voltage are observed. These oscillating high voltages are found to be adequately suppressed by the strategic placement of external snubber circuitry. On the other hand, no doubling of the THETA-pinch preionization bank charge voltage is found. Calculations of the equations for the z-pinch preionization circuit are also performed.

  16. Voltage Regulators for Photovoltaic Systems

    Science.gov (United States)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  17. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  18. Tunable sensor response by voltage-control in biomimetic hair flow sensors

    NARCIS (Netherlands)

    Droogendijk, H.; Krijnen, G.J.M.

    2012-01-01

    We report improvements in detection limit and responsivity of biomimetic hair flow sensors by electrostatic spring-softening (ESS). Applying a DC-bias voltage to our capacitive flow sensors mediates large (80% and more) voltage-controlled electromechanical amplification of the flow signal for freque

  19. Tunable sensor response by voltage-control in biomimetic hair flow sensors

    NARCIS (Netherlands)

    Droogendijk, H.; Krijnen, G.J.M.

    2012-01-01

    We report improvements in detection limit and responsivity of biomimetic hair flow sensors by electrostatic spring-softening (ESS). Applying a DC-bias voltage to our capacitive flow sensors mediates large (80% and more) voltage-controlled electro-mechanical amplification of the flow signal for frequ

  20. Low voltage excess noise and shot noise in YBCO bicrystal junctions

    DEFF Research Database (Denmark)

    Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.;

    2002-01-01

    The spectral density of background noise emitted by symmetric bicrystal YBaCuO Josephson junctions on sapphire substrates have been measured by a low noise cooled HEMT amplifier for bias voltages up to V approximate to 50 mV. At relatively low voltages V <4 mV a noticeable noise rise has been reg...

  1. Studying Voltage Transformer Ferroresonance

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-09-01

    Full Text Available This study studies the effect of Circuit Breaker Shunt Resistance (CBSR, Metal Oxide Vaistor (MOV and Neutral earth Resistance (NR on the control of ferroresonance in the voltage transformer. It is expected that NR can controlled ferroresonance better than MOV and CBSR. Study has been done on a one phase voltage transformer rated 100 VA, 275 kV. The simulation results reveal that considering the CBSR and MOV exhibits a great mitigating effect on ferroresonance overvoltages, but these resistances cannot control these phenomena for all range of parameters. By applying NR to the system structure, ferroresonance has been controlled and its amplitude has been damped for all parameters values.

  2. Reverse bias protected solar array with integrated bypass battery

    Science.gov (United States)

    Landis, Geoffrey A (Inventor)

    2012-01-01

    A method for protecting the photovoltaic cells in a photovoltaic (PV) array from reverse bias damage by utilizing a rechargeable battery for bypassing current from a shaded photovoltaic cell or group of cells, avoiding the need for a bypass diode. Further, the method mitigates the voltage degradation of a PV array caused by shaded cells.

  3. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the magnetic system and stabilizers asynchronous generator of electricity parameters confirmed by the patents for the invention of the Russian Federation. The proposed technical solution voltage stabilizer asynchronous generators, can reduce the weight of the block capacitors excitation and reactive power compensation, as well as to simplify the control system power circuit which has less power electronic devices. For wind power plants it is an important issue not only to stabilize the voltage of the generator, but also the frequency of the current. Recommend functionality stabilizer schemes parameters of electric power made for direct frequency converters with artificial and natural switching power electronic devices. It is also proposed as part of stabilization systems use single-phase voltage, three-phase transformers with rotating magnetic field, reduce the level of electromagnetic interference generated by power electronic devices for switching, enhance the efficiency and reliability of the stabilizer.

  4. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  5. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  6. Media Bias and Reputation

    OpenAIRE

    Matthew Gentzkow; Jesse M. Shapiro

    2005-01-01

    A Bayesian consumer who is uncertain about the quality of an information source will infer that the source is of higher quality when its reports conform to the consumer's prior expectations. We use this fact to build a model of media bias in which firms slant their reports toward the prior beliefs of their customers in order to build a reputation for quality. Bias emerges in our model even though it can make all market participants worse off. The model predicts that bias will be less severe w...

  7. Biased predecision processing.

    Science.gov (United States)

    Brownstein, Aaron L

    2003-07-01

    Decision makers conduct biased predecision processing when they restructure their mental representation of the decision environment to favor one alternative before making their choice. The question of whether biased predecision processing occurs has been controversial since L. Festinger (1957) maintained that it does not occur. The author reviews relevant research in sections on theories of cognitive dissonance, decision conflict, choice certainty, action control, action phases, dominance structuring, differentiation and consolidation, constructive processing, motivated reasoning, and groupthink. Some studies did not find evidence of biased predecision processing, but many did. In the Discussion section, the moderators are summarized and used to assess the theories.

  8. Regulating multiple externalities

    DEFF Research Database (Denmark)

    Waldo, Staffan; Jensen, Frank; Nielsen, Max

    2016-01-01

    Open access is a well-known externality problem in fisheries causing excess capacity and overfishing. Due to global warming, externality problems from CO2 emissions have gained increased interest. With two externality problems, a first-best optimum can be achieved by using two regulatory instrume......Open access is a well-known externality problem in fisheries causing excess capacity and overfishing. Due to global warming, externality problems from CO2 emissions have gained increased interest. With two externality problems, a first-best optimum can be achieved by using two regulatory...

  9. Voltage-induced reduction of graphene oxide

    Science.gov (United States)

    Faucett, Austin C.

    Graphene Oxide (GO) is being widely researched as a precursor for the mass production of graphene, and as a versatile material in its own right for flexible electronics, chemical sensors, and energy harvesting applications. Reduction of GO, an electrically insulating material, into reduced graphene oxide (rGO) restores electrical conductivity via removal of oxygen-containing functional groups. Here, a reduction method using an applied electrical bias, known as voltage-induced reduction, is explored. Voltage-induced reduction can be performed under ambient conditions and avoids the use of hazardous chemicals or high temperatures common with standard methods, but little is known about the reduction mechanisms and the quality of rGO produced with this method. This work performs extensive structural and electrical characterization of voltage-reduced GO (V-rGO) and shows that it is competitive with standard methods. Beyond its potential use as a facile and eco-friendly processing approach, V-rGO reduction also offers record high-resolution patterning capabilities. In this work, the spatial resolution limits of voltage-induced reduction, performed using a conductive atomic force microscope probe, are explored. It is shown that arbitrary V-rGO conductive features can be patterned into insulating GO with nanoscale resolution. The localization of voltage-induced reduction to length scales < 10 nm allows studies of reduction reaction kinetics, using electrical current obtained in-situ, with statistical robustness. Methods for patterning V-rGO nanoribbons are then developed. After presenting sub-10nm patterning of V-rGO nanoribbons in GO single sheets and films, the performance of V-rGO nanoribbon field effect transistors (FETs) are demonstrated. Preliminary measurements show an increase in electrical current on/off ratios as compared to large-area rGO FETs, indicating transport gap modulation that is possibly due to quantum confinement effects.

  10. Admittance Spectroscopy in CZTSSe: Metastability Behavior and Voltage Dependent Defect Study

    Energy Technology Data Exchange (ETDEWEB)

    Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

    2016-11-21

    Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.

  11. ExternE National Implementation Finland

    Energy Technology Data Exchange (ETDEWEB)

    Pingoud, K.; Maelkki, H.; Wihersaari, M.; Pirilae, P. [VTT Energy, Espoo (Finland); Hongisto, M. [Imatran Voima Oy, Vantaa (Finland); Siitonen, S. [Ekono Energy Ltd, Espoo (Finland); Johansson, M. [Finnish Environment Institute, Helsinki (Finland)

    1999-07-01

    ExternE National Implementation is a continuation of the ExternE Project, funded in part by the European Commission's Joule III Programme. This study is the result of the ExternE National Implementation Project for Finland. Three fuel cycles were selected for the Finnish study: coal, peat and wood-derived biomass, which together are responsible for about 40% of total electricity generation in Finland and about 75% of the non-nuclear fuel based generation. The estimated external costs or damages were dominated by the global warming (GW) impacts in the coal and peat fuel cycles, but knowledge of the true GW impacts is still uncertain. From among other impacts that were valued in monetary terms the human health damages due to airborne emissions dominated in all the three fuel cycles. Monetary valuation for ecosystem impacts is not possible using the ExternE methodology at present. The Meri-Pori power station representing the coal fuel cycle is one of the world's cleanest and most efficient coal-fired power plants with a condensing turbine. The coal is imported mainly from Poland. The estimated health damages were about 4 mECU/kWh, crop damages an order of magnitude lower and damages caused to building materials two orders of magnitude lower. The power stations of the peat and biomass fuel cycles are of CHP type, generating electricity and heat for the district heating systems of two cities. Their fuels are of domestic origin. The estimated health damages allocated to electricity generation were about 5 and 6 mECU/kWh, respectively. The estimates were case-specific and thus an generalisation of the results to the whole electricity generation in Finland is unrealistic. Despite the uncertainties and limitations of the methodology, it is a promising tool in the comparison of similar kinds of fuel cycles, new power plants and pollution abatement technologies and different plant locations with each other. (orig.)

  12. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  13. Berkson’s bias, selection bias, and missing data

    OpenAIRE

    Westreich, Daniel

    2012-01-01

    While Berkson’s bias is widely recognized in the epidemiologic literature, it remains underappreciated as a model of both selection bias and bias due to missing data. Simple causal diagrams and 2×2 tables illustrate how Berkson’s bias connects to collider bias and selection bias more generally, and show the strong analogies between Berksonian selection bias and bias due to missing data. In some situations, considerations of whether data are missing at random or missing not at random is less i...

  14. Introduction to Unconscious Bias

    Science.gov (United States)

    Schmelz, Joan T.

    2010-05-01

    We all have biases, and we are (for the most part) unaware of them. In general, men and women BOTH unconsciously devalue the contributions of women. This can have a detrimental effect on grant proposals, job applications, and performance reviews. Sociology is way ahead of astronomy in these studies. When evaluating identical application packages, male and female University psychology professors preferred 2:1 to hire "Brian” over "Karen” as an assistant professor. When evaluating a more experienced record (at the point of promotion to tenure), reservations were expressed four times more often when the name was female. This unconscious bias has a repeated negative effect on Karen's career. This talk will introduce the concept of unconscious bias and also give recommendations on how to address it using an example for a faculty search committee. The process of eliminating unconscious bias begins with awareness, then moves to policy and practice, and ends with accountability.

  15. Increasingly minimal bias routing

    Energy Technology Data Exchange (ETDEWEB)

    Bataineh, Abdulla; Court, Thomas; Roweth, Duncan

    2017-02-21

    A system and algorithm configured to generate diversity at the traffic source so that packets are uniformly distributed over all of the available paths, but to increase the likelihood of taking a minimal path with each hop the packet takes. This is achieved by configuring routing biases so as to prefer non-minimal paths at the injection point, but increasingly prefer minimal paths as the packet proceeds, referred to herein as Increasing Minimal Bias (IMB).

  16. Biased causal inseparable game

    CERN Document Server

    Bhattacharya, Some Sankar

    2015-01-01

    Here we study the \\emph{causal inseparable} game introduced in [\\href{http://www.nature.com/ncomms/journal/v3/n10/full/ncomms2076.html}{Nat. Commun. {\\bf3}, 1092 (2012)}], but it's biased version. Two separated parties, Alice and Bob, generate biased bits (say input bit) in their respective local laboratories. Bob generates another biased bit (say decision bit) which determines their goal: whether Alice has to guess Bob's bit or vice-verse. Under the assumption that events are ordered with respect to some global causal relation, we show that the success probability of this biased causal game is upper bounded, giving rise to \\emph{biased causal inequality} (BCI). In the \\emph{process matrix} formalism, which is locally in agreement with quantum physics but assume no global causal order, we show that there exist \\emph{inseparable} process matrices that violate the BCI for arbitrary bias in the decision bit. In such scenario we also derive the maximal violation of the BCI under local operations involving tracele...

  17. Application of Load Compensation in Voltage Controllers of Large Generators in the Polish Power Grid

    Directory of Open Access Journals (Sweden)

    Bogdan Sobczak

    2014-03-01

    Full Text Available The Automatic Voltage Regulator normally controls the generator stator terminal voltage. Load compensation is used to control the voltage which is representative of the voltage at a point either within or external to the generator. In the Polish Power Grid (PPG compensation is ready to use in every AVR of a large generator, but it is utilized only in the case of generators operating at the same medium voltage buses. It is similar as in most European Power Grids. The compensator regulating the voltage at a point beyond the machine terminals has significant advantages in comparison to the slower secondary Voltage and Reactive Power Control System (ARNE1. The compensation stiffens the EHV grid, which leads to improved voltage quality in the distribution grid. This effect may be particularly important in the context of the dynamic development of wind and solar energy.

  18. ASH External Web Portal (External Portal) -

    Data.gov (United States)

    Department of Transportation — The ASH External Web Portal is a web-based portal that provides single sign-on functionality, making the web portal a single location from which to be authenticated...

  19. Deployment of low-voltage regulator considering existing voltage control in medium-voltage distribution systems

    Directory of Open Access Journals (Sweden)

    Hiroshi Kikusato

    2016-01-01

    Full Text Available Many photovoltaic (PV systems have been installed in distribution systems. This installation complicates the maintenance of all voltages within the appropriate range in all low-voltage distribution systems (LVDSs because the trends in voltage fluctuation differ in each LVDS. The installation of a low-voltage regulator (LVR that can accordingly control the voltage in each LVDS has been studied as a solution to this problem. Voltage control in a medium-voltage distribution system must be considered to study the deployment of LVRs. In this study, we installed LVRs in the LVDSs in which the existing voltage-control scheme cannot prevent voltage deviation and performed a numerical simulation by using a distribution system model with PV to evaluate the deployment of the LVRs.

  20. Giant magnetoelectric effect in self-biased laminates under zero magnetic field

    Science.gov (United States)

    Li, Menghui; Wang, Zhiguang; Wang, Yaojin; Li, Jiefang; Viehland, D.

    2013-02-01

    A giant magnetoelectric (ME) effect in self-biased annealed Metglas/Pb(Zr,Ti)O3/Metglas laminates under zero magnetic bias is reported. The remanent magnetization was increased by annealing Metglas, which generated an internal bias field. This shifted the M-H hysteresis loops, yielding large values for the ME voltage coefficient of αME = 12 V/cm.Oe and 380 V/cm.Oe at 1 kHz and electromechanical resonance under zero magnetic bias, respectively. This self-biased laminate is shown to have a high sensitivity to ac magnetic fields.

  1. Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2014-01-01

    -out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

  2. Externally programmed variable timer

    Science.gov (United States)

    Gulbis, P. R.

    1971-01-01

    Device satisfies 1-sec, 5-sec, and 10-min timing requirements. Temperature and voltage range accuracy is plus or minus 3.9 percent with voltage variations of 24 to 31 Vdc over temperature range of minus 55 deg C to plus 125 deg C.

  3. Design of A Low Power Low Voltage CMOS Opamp

    CERN Document Server

    Baruah, Ratul Kr

    2010-01-01

    In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on bias current. The unique behaviour of the MOS transistors in subthreshold region not only allows a designer to work at low input bias current but also at low voltage. While operating the device at weak inversion results low power dissipation but dynamic range is degraded. Optimum balance between power dissipation and dynamic range results when the MOS transistors are operated at moderate inversion. Power is again minimised by the application of input dependant bias current using feedback loops in the input transistors of the differential pair with two current substractors. In comparison with the reported low power low voltage opamps at 0.8 micron technology, this opamp has very low standby power consumption with a high driving capability and operates at low voltage. The opamp ...

  4. Analyzing of Dynamic Voltage Restorer in Series Compensation Voltage

    Directory of Open Access Journals (Sweden)

    Naser Parhizgar

    2012-02-01

    Full Text Available The Dynamic Voltage Restorer (DVR is a series-connected compensator to generate a controllable voltage to against the short-term voltage disturbances. The technique of DVR is an effective and cost competitive approach to improve voltage quality at the load side. This study presents a single-phase and threephase DVR system with reduced switch-count topology to protect the sensitive load against abnormal voltage conditions. Most basic function, the DVR configuration consist of a two level Voltage Source Converter (VSC, a dc energy storage device, a coupling transformer Connected in shunt with the ac system This study presents the application of Dynamic Voltage Restorer (DVR on power distribution systems for mitigation of voltage sag at critical loads. DVR is one of the compensating types of custom power devices. The DVR, which is based on forced-commutated Voltage Source Converter (VSC has been proved suitable for the task of compensating voltage sags/swells. Simulation results are presented to illustrate and understand the performances of DVR in supporting load voltages under voltage sags/swells conditions.

  5. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  6. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  7. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  8. Observatory crustal magnetic biases during CHAMP satellite mission

    Science.gov (United States)

    Verbanac, G.; Mandea, M.; Bandić, M.; Subašić, S.

    2015-01-01

    Taking advantage of nine years of CHAMP satellite mission (June 2000-August 2009), we investigate the temporal evolution of the observatory monthly crustal magnetic biases. To determine biases we compute X (northward), Y (eastward) and Z (vertically downward) monthly means from 42 observatory one-minute or hourly values, and compare them to synthetic monthly means obtained from a GRIMM3 core field model (V. Lesur, personal communication, 2014). Both short period variations and long term trends in the monthly bias time series are analyzed. A comparison with biases based on MAGSAT and Ørsted satellite data, related to the 1979.92 and 1992.92 epochs is performed. Generally, the larger biases averaged over nine years and the larger differences between biases based on different models are found in Z component. This can be the signature of the induced magnetic fields. Although annual trends in most bias series are observed, no clear evidence that the constant crustal field changed significantly over the studied period is found. Time series of monthly biases exhibit distinct oscillatory pattern in the whole time span, which we assign to the external field contributions. The amplitudes of these variations are linked with the phase of the solar cycle, being significantly larger in the period 2000-2005 than in the period 2006-2009. Clear semi-annual variations are evident in all components, with extremes in spring and fall months of each year. Common external field pattern is found for European monthly biases. A dependence of the bias monthly variations on geomagnetic latitudes is not found for the non-European observatories. The results from this study represent a base to further exploit the observatory and repeat stations magnetic biases together with the data from the new satellite mission SWARM.

  9. Analytical Model for Voltage-Dependent Photo and Dark Currents in Bulk Heterojunction Organic Solar Cells

    OpenAIRE

    2016-01-01

    A physics-based explicit mathematical model for the external voltage-dependent forward dark current in bulk heterojunction (BHJ) organic solar cells is developed by considering Shockley-Read-Hall (SRH) recombination and solving the continuity equations for both electrons and holes. An analytical model for the external voltage-dependent photocurrent in BHJ organic solar cells is also proposed by incorporating exponential photon absorption, dissociation efficiency of bound electron-hole pairs (...

  10. Bias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene)

    OpenAIRE

    Liu, YR; Liao, R.; Lai, PT; Yao, RH

    2012-01-01

    A polymer thin-film transistor (PTFT) based on poly(3-hexylthiophene) (P3HT) is fabricated by a spin-coating process and characterized. Its bias-stress-induced instability during operation is investigated as a function of time and temperature. For negative gate-bias stress, the carrier mobility remains unchanged, the off-state current decreases, and the threshold voltage shifts toward the negative direction. On the other hand, for negative drain-bias stress, the carrier mobility decreases sli...

  11. Practical investigation of the gate bias effect on the reverse recovery behavior of the body diode in power MOSFETs

    DEFF Research Database (Denmark)

    Lindberg-Poulsen, Kristian; Petersen, Lars Press; Ouyang, Ziwei

    2014-01-01

    This work considers an alternative method of reducing the body diode reverse recovery by taking advantage of the MOSFET body effect, and applying a bias voltage to the gate before reverse recovery. A test method is presented, allowing the accurate measurement of voltage and current waveforms during...... reverse recovery at high di=dt. Different bias voltages and dead times are combined, giving a loss map which makes it possible to evaluate the practical efficacy of gate bias on reducing the MOSFET body diode reverse recovery, while comparing it to the well known methods of dead time optimization...

  12. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar;

    2013-01-01

    problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0....

  13. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    . An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  14. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  15. Switchable voltage control of the magnetic coercive field via magnetoelectric effect

    Science.gov (United States)

    Wang, Jing; Ma, Jing; Li, Zheng; Shen, Yang; Lin, Yuanhua; Nan, C. W.

    2011-08-01

    Switchable voltage modulation of the magnetic properties is reported in different multiferroic bilayers with magnetic films grown on pre-poled ferroelectric substrates, based on the magneto-optical Kerr effect observations. The dynamic voltage control of the magnetic coercive field (Hc) is dependent not only on the materials properties of each ferroic layer, but also on the bias voltage history. The Hc versus electric field behaviors essentially track the dependence of the piezostrains of the substrates on the bias voltage. The observations demonstrate that Hc in such multiferroic bilayers can be controlled by voltage via strain-mediated magnetoelectric coupling and that the Hc change is not an artifact due to a heating effect.

  16. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  17. The first results of electrode biasing experiments in the IR-T1 tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Ghoranneviss, M; Salar Elahi, A; Mohammadi, S; Arvin, R, E-mail: salari_phy@yahoo.co [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, PO Box 14665-678, Tehran (Iran, Islamic Republic of)

    2010-09-15

    We report here the first results of our movable electrode biasing experiments performed in the IR-T1 tokamak. For this study, a movable electrode biasing system was designed, constructed and installed on the IR-T1 tokamak. A positive voltage was applied to an electrode inserted in the tokamak limiter. The plasma current, poloidal and radial components of the magnetic fields, loop voltage and diamagnetic flux in the absence and presence of the biased electrode were measured. Results of the improvement done to plasma equilibrium behaviour are compared and discussed in this paper.

  18. Time resolved measurements of the biased disk effect at an Electron Cyclotron Resonance Ion Source

    Directory of Open Access Journals (Sweden)

    K. E. Stiebing

    1999-12-01

    Full Text Available First results are reported from time resolved measurements of ion currents extracted from the Frankfurt 14 GHz Electron Cyclotron Resonance Ion Source with pulsed biased-disk voltage. It was found that the ion currents react promptly to changes of the bias. From the experimental results it is concluded that the biased disk effect is mainly due to improvements of the extraction conditions for the source and/or an enhanced transport of ions into the extraction area. By pulsing the disk voltage, short current pulses of highly charged ions can be generated with amplitudes significantly higher than the currents obtained in continuous mode.

  19. Effects of Potassium Currents upon Action Potential of Cardiac Cells Exposed to External Electric fields

    Institute of Scientific and Technical Information of China (English)

    An-Ying Zhang; Xiao-Feng Pang

    2008-01-01

    Previous studies show that exposure to high-voltage electric fields would influence the electro cardiogram both in experimental animate and human beings. The effects of the external electric fields upon action potential of cardiac cells are studied in this paper based on the dynamical model, LR91. Fourth order Runger-Kuta is used to analyze the change of potassium ion channels exposed to external electric fields in detail. Results indicate that external electric fields could influence the current of potassium ion by adding an induced component voltage on membrane. This phenomenon might be one of the reasons of heart rate anomaly under the high-voltage electric fields.

  20. A Voltage Controlled Oscillator using Ring Structure in CMOS Technology

    Directory of Open Access Journals (Sweden)

    Mrs. Devendra Rani

    2012-06-01

    Full Text Available Voltage-Controlled Ring Oscillators are crucial components in many wireless communication systems. The goal of this project is to design a high speed and lower power consumption, a voltage controlled oscillator (VCO, based on ring oscillators in 250nm CMOS technology, which provides a frequency of 2.4GHz. This CMOS based VCO is used for high speed wireless communication applications. A design of VCO includes delay cell, bias circuitry, and tuning circuitry using Tanner 13.0v software.

  1. The ability of external immobilizers to restrict movement of the cervical spine: a systematic review

    NARCIS (Netherlands)

    Holla, M.; Huisman, J.M.; Verdonschot, N.J.J.; Goosen, J.; Hosman, A.J.; Hannink, G.

    2016-01-01

    Purpose To review the ability of various types of external immobilizers to restrict cervical spine movement. Methods With a systematical review of original scientific articles, data on range of motion, type of used external immobilization device and risk of bias were extracted. The described extern

  2. DFB laser with attached external intensity modulator

    Energy Technology Data Exchange (ETDEWEB)

    Marcuse, D. (AT and T Bell Labs. Holmdel, NJ (US))

    1990-02-01

    This paper presents a theoretical study of the frequency pulling effect exerted on a DFB laser by an external amplitude modulator that is directly attached to it. The modulator consists of a piece of waveguide whose loss is modulated by means of an externally applied voltage. The modulator affects the laser due to residual reflections from its far end which appear as a variable effective reflectivity to the output end of the DFB laser. Modulation affects the magnitude as well as the phase of the effective reflection coefficient presented to the laser due to the coupling of the real and imaginary parts of the effective refractive index of the modulator waveguide. The tuning problem is formulated as an eigenvalue equation for the DFB laser in the presence of an externally attached lossy cavity.

  3. Modulation Instability in Biased Photorefractive-Photovoltaic Crystals

    Institute of Scientific and Technical Information of China (English)

    LU Ke-Qing; ZHAO Wei; YANG Yan-Long; SUN Chuan-Dong; GAO Hong-Wen; LI Jin-Ping; ZHANG Yan-Peng

    2004-01-01

    @@ We show the modulation instability of broad optical beams in biased photorefractive-photovoltaic crystals under steady-state conditions. This modulation instability growth rate depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam intensity to that of the dark irradiance. Under appropriate conditions, this modulation instability growth rate is the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals, and the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals can be predicted.

  4. High Voltage Operation of heavily irradiated silicon microstrip detectors

    CERN Document Server

    Gu, W H; Angarano, M M; Bader, A; Biggeri, U; Boemi, D; Braibant, S; Breuker, H; Bruzzi, Mara; Caner, A; Catacchini, E; Civinini, C; Creanza, D; D'Alessandro, R; Demaria, N; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; Fürtjes, A; Glessing, B; Hall, G; Hammerstrom, R; Dollan, Ralph; Huhtinen, M; Karimäki, V; König, S; Lenzi, M; Lübelsmeyer, K; Maggi, G; Mannelli, M; Marchioro, A; Mariotti, C; Mättig, P; McEvoy, B; Meschini, M; My, S; Pandoulas, D; Parrini, G; Pieri, M; Dollan, Ralph; Potenza, R; Raso, G; Raymond, M; Schmitt, B; Selvaggi, G; Siedling, R; Silvestris, L; Skog, K; Stefanini, G; Tempesta, P; Tricomi, A; Watts, S; Wittmer, B; De Palma, M

    1999-01-01

    We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits.

  5. Conduction channels at finite bias in single-atom gold contacts

    DEFF Research Database (Denmark)

    Brandbyge, Mads; Kobayashi, Nobuhiko; Tsukada, Masaru

    1999-01-01

    We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilib......We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using...... the nonequilibrium-Green-function formalism. We calculate the voltage drop through the contacts and find the main drop located near the negative electrode. We argue that this is due to the filled d-state resonances. The conduction is analyzed in terms of transmission eigenchannels and density of states...

  6. Measuring Agricultural Bias

    DEFF Research Database (Denmark)

    Jensen, Henning Tarp; Robinson, Sherman; Tarp, Finn

    . For the 15 sample countries, the results indicate that the agricultural price incentive bias, which was generally perceived to exist during the 1980s, was largely eliminated during the 1990s. The results also demonstrate that general equilibrium effects and country-specific characteristics - including trade...... shares and intersectoral linkages - are crucial for determining the sign and magnitude of trade policy bias. The GE-ERP measure is therefore uniquely suited to capture the full impact of trade policies on agricultural price incentives. A Monte Carlo procedure confirms that the results are robust...

  7. Measuring agricultural policy bias

    DEFF Research Database (Denmark)

    Jensen, Henning Tarp; Robinson, Sherman; Tarp, Finn

    2010-01-01

    Measurement is a key issue in the literature on price incentive bias induced by trade policy. We introduce a general equilibrium measure of the relative effective rate of protection, which generalizes earlier protection measures. For our fifteen sample countries, results indicate that the agricul......Measurement is a key issue in the literature on price incentive bias induced by trade policy. We introduce a general equilibrium measure of the relative effective rate of protection, which generalizes earlier protection measures. For our fifteen sample countries, results indicate...... protection measure is therefore uniquely suited to capture the full impact of trade policies on relative agricultural price incentives....

  8. No-Voltage Meter

    Science.gov (United States)

    1976-02-01

    VW- IKft, 1/4 H4 -Wv- IK!1, I/4W INTERNAL VOLTAGE NOTE ALL TRANSISTORS ARE 2N43A OR EQUIVALENT GERMANIUM ALLOY PNP AA ALKALINE BATTERY...D-,, regardless of polarity. This signal is then full-wave rectified by the diode-connected Germanium transistor bridge, T,, T-,, T3, and T4... Transistor T5 acts as a second current limiter. Resistor R2 was selected to give 90 f# of full-scale meter deflection with an input signal of 115 volts

  9. Moderately nonlinear diffuse-charge dynamics under an ac voltage

    Science.gov (United States)

    Stout, Robert F.; Khair, Aditya S.

    2015-09-01

    The response of a symmetric binary electrolyte between two parallel, blocking electrodes to a moderate amplitude ac voltage is quantified. The diffuse charge dynamics are modeled via the Poisson-Nernst-Planck equations for a dilute solution of point-like ions. The solution to these equations is expressed as a Fourier series with a voltage perturbation expansion for arbitrary Debye layer thickness and ac frequency. Here, the perturbation expansion in voltage proceeds in powers of Vo/(kBT /e ) , where Vo is the amplitude of the driving voltage and kBT /e is the thermal voltage with kB as Boltzmann's constant, T as the temperature, and e as the fundamental charge. We show that the response of the electrolyte remains essentially linear in voltage amplitude at frequencies greater than the RC frequency of Debye layer charging, D /λDL , where D is the ion diffusivity, λD is the Debye layer thickness, and L is half the cell width. In contrast, nonlinear response is predicted at frequencies below the RC frequency. We find that the ion densities exhibit symmetric deviations from the (uniform) equilibrium density at even orders of the voltage amplitude. This leads to the voltage dependence of the current in the external circuit arising from the odd orders of voltage. For instance, the first nonlinear contribution to the current is O (Vo3) which contains the expected third harmonic but also a component oscillating at the applied frequency. We use this to compute a generalized impedance for moderate voltages, the first nonlinear contribution to which is quadratic in Vo. This contribution predicts a decrease in the imaginary part of the impedance at low frequency, which is due to the increase in Debye layer capacitance with increasing Vo. In contrast, the real part of the impedance increases at low frequency, due to adsorption of neutral salt from the bulk to the Debye layer.

  10. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...... to guide these grid-connected distributed power generation systems. In order to verify the response of such systems for voltage disturbance, mainly for evaluation of voltage sags/dips, a Voltage Sag Generator (VSG) is needed. This paper evaluates such sag test devices according to IEC 61000 in order...... to provide cheaper solutions to test against voltage sags. Simulation and experimental results demonstrate that the shunt impedance based VSG solution is the easiest and cheapest one for laboratory test applications. The back-to-back fully controlled converter based VSG is the most flexible solution...

  11. Influence of mechanical load bias on converse magnetoelectric laminate composites

    Science.gov (United States)

    Wu, Tao; Emmons, Michael; Chung, Tien-Kan; Sorge, Jian; Carman, Gregory P.

    2010-05-01

    A piezofiber/Metglas (PFM) magnetoelectric (ME) laminate has been integrated into a graphite epoxy composite (GEC) to study the converse ME effect (CME). Experimental data on a PFM/GEC subjected to both a dc magnetic field bias and a dc mechanical load bias while exciting it with an ac electric driving voltage are presented. Results of these tests indicate that both the mechanical load and the dc magnetic field strongly influence the CME response. Furthermore, an optimum mechanical load exists to maximize the CME coefficient, which should also be present in standalone ME laminates. These results reveal that the CME coefficient can be further increased with a proper mechanical load bias. Therefore, the selection of an appropriate mechanical preload as well as dc magnetic bias will maximize the CME response and sensitivity in ME laminates as well as integrated structural systems.

  12. External radiation surveillance

    Energy Technology Data Exchange (ETDEWEB)

    Antonio, E.J.

    1995-06-01

    This section of the 1994 Hanford Site Environmental Report describes how external radiation was measured, how surveys were performed, and the results of these measurements and surveys. External radiation exposure rates were measured at locations on and off the Hanford Site using thermoluminescent dosimeters (TLD). External radiation and contamination surveys were also performed with portable radiation survey instruments at locations on and around the Hanford Site.

  13. Current-voltage characteristics of carbon nanotubes with substitutional nitrogen

    DEFF Research Database (Denmark)

    Kaun, C.C.; Larade, B.; Mehrez, H.;

    2002-01-01

    We report ab initio analysis of current-voltage (I-V) characteristics of carbon nanotubes with nitrogen substitution doping. For zigzag semiconducting tubes, doping with a single N impurity increases current flow and, for small radii tubes, narrows the current gap. Doping a N impurity per nanotube...... unit cell generates a metallic transport behavior. Nonlinear I-V characteristics set in at high bias and a negative differential resistance region is observed for the doped tubes. These behaviors can be well understood from the alignment/mis-alignment of the current carrying bands in the nanotube leads...... due to the applied bias voltage. For a armchair metallic nanotube, a reduction of current is observed with substitutional doping due to elastic backscattering by the impurity....

  14. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... analysis, which is simple for computation and requires moderate automation and communication infrastructure. The proposed method is suitable for a hierarchical control structure where a supervisory controller has the provision to adapt the settings of local PV inverter controllers for overall system...

  15. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  16. Simulating currency substitution bias

    NARCIS (Netherlands)

    M. Boon (Martin); C.J.M. Kool (Clemens); C.G. de Vries (Casper)

    1989-01-01

    textabstractThe sign and size of estimates of the elasticity of currency substitution critically depend on the definition of the oppurtunity costs of holding money. We investigate possible biases by means of Monte Carlo experiments, as sufficient real data are not available.

  17. Sex Bias in Children.

    Science.gov (United States)

    Zalk, Sue Rosenberg; And Others

    This study investigated children's sex biased attitudes as a function of the sex, age, and race of the child as well as a geographical-SES factor. Two attitudes were measured on a 55-item questionnaire: Sex Pride (attributing positive characteristics to a child of the same sex) and Sex Prejudice (attributing negative characteristics to a child of…

  18. Voltage Swells Improvement in Low Voltage Network Using Dynamic Voltage Restorer

    Directory of Open Access Journals (Sweden)

    R. Omar

    2011-01-01

    Full Text Available Problem statement: Voltage disturbances are the most common power quality problem due to the increased use of a large numbers of sophisticated electronic equipment in industrial distribution system. The voltage disturbances such as voltage sags, swells, harmonics, unbalance and flickers. High quality in the power supply is needed, since failures due to such disturbances usually have a high impact on production cost. There are many different solutions to compensate voltage disturbances but the use of a DVR is considered to be the most cost effective method. The objective of this study is to propose a new topology of a DVR in order to mitigate voltage swells using a powerful power custom device namely the Dynamic Voltage Restorer (DVR. Approach: New configuration of a DVR with an improvement of a controller based on direct-quadrature-zero method has been introduced to compensate voltage swells in the network. Results: The effectiveness of the DVR with its controller were verify using Matlab/Simulinks SimPower Toolbox and then implemented using 5KVA DVR experimental setup. Simulations and experimental results demonstrate the effective dynamic performance of the proposed configuration. Conclusion: The implimentation of the proposed DVR validate the capabilities in mitigating of voltage swells effectiveness.During voltage swells, the DVR injects an appropriate voltage to maintain the load voltage at its nominal value.

  19. Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2013-01-01

    Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

  20. Exchange bias in nano-ferrihydrite

    Science.gov (United States)

    Balaev, D. A.; Krasikov, A. A.; Dubrovskiy, A. A.; Popkov, S. I.; Stolyar, S. V.; Iskhakov, R. S.; Ladygina, V. P.; Yaroslavtsev, R. N.

    2016-11-01

    We report the results of investigations of the effect of cooling in an external magnetic field starting from the temperature over superparamagnetic blocking temperature TB on the shift of magnetic hysteresis loops in systems of ferrihydrite nanoparticles from ˜2.5 to ˜5 nm in size with different TB values. In virtue of high anisotropy fields of ferrihydrite nanoparticles and open hysteresis loops in the range of experimentally attainable magnetic fields, the shape of hysteresis loops of such objects in the field-cooling mode is influenced by the minor hysteresis loop effect. A technique is proposed for distinguishing the exchange bias effect among the effects related to the minor hysteresis loops caused by high anisotropy fields of ferrihydrite particles. The exchange bias in ferrihydrite is stably observed for particles not less than 3 nm in size or with TB over 40 K, and its characteristic value increases with the particle size.

  1. Biased liquid crystal infiltrated photonic bandgap fiber

    DEFF Research Database (Denmark)

    Weirich, Johannes; Lægsgaard, Jesper; Scolari, Lara

    2009-01-01

    A simulation scheme for the transmission spectrum of a photonic crystal fiber infiltrated with a nematic liquid crystal and subject to an external bias is presented. The alignment of the biased liquid crystal is simulated using the finite element method to solve the relevant system of coupled...... partial differential equations. From the liquid crystal alignment the full tensorial dielectric permittivity in the capillaries is derived. The transmission spectrum for the photonic crystal fiber is obtained by solving the generalized eigenvalue problem deriving from Maxwell’s equations using a vector...... element based finite element method. We demonstrate results for a splay aligned liquid crystal infiltrated into the capillaries of a four-ring photonic crystal fiber and compare them to corresponding experiments....

  2. Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal-oxide-semiconductor field-effect transistors

    Institute of Scientific and Technical Information of China (English)

    Cao Yan-Rong; Hao Yue; Ma Xiao-Hua; Hu Shi-Gang

    2009-01-01

    The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage stress applied, the degradation of negative bias temperature instability (NBTI) is enhanced, and there comes forth an inflexion point. The degradation pace turns larger when the substrate bias is higher than the inflexion point. The substrate hot holes can be injected into oxide and generate additional oxide traps, inducing an inflexion phenomenon. When a constant substrate bias stress is applied, as the gate voltage stress increases, an inflexion comes into being also. The higher gate voltage causes the electrons to tunnel into the substrate from the poly, thereby generating the electron-hole pairs by impact ionization. The holes generated by impact ionization and the holes from the substrate all can be accelerated to high energies by the substrate bias. More additional oxide traps can be produced, and correspondingly, the degradation is strengthened by the substrate bias. The results of the alternate stress experiment show that the interface traps generated by the hot holes cannot be annealed, which is different from those generated by common holes.

  3. Isomerically Pure Tetramethylrhodamine Voltage Reporters.

    Science.gov (United States)

    Deal, Parker E; Kulkarni, Rishikesh U; Al-Abdullatif, Sarah H; Miller, Evan W

    2016-07-27

    We present the design, synthesis, and application of a new family of fluorescent voltage indicators based on isomerically pure tetramethylrhodamines. These new Rhodamine Voltage Reporters, or RhoVRs, use photoinduced electron transfer (PeT) as a trigger for voltage sensing, display excitation and emission profiles in the green to orange region of the visible spectrum, demonstrate high sensitivity to membrane potential changes (up to 47% ΔF/F per 100 mV), and employ a tertiary amide derived from sarcosine, which aids in membrane localization and simultaneously simplifies the synthetic route to the voltage sensors. The most sensitive of the RhoVR dyes, RhoVR 1, features a methoxy-substituted diethylaniline donor and phenylenevinylene molecular wire at the 5'-position of the rhodamine aryl ring, exhibits the highest voltage sensitivity to date for red-shifted PeT-based voltage sensors, and is compatible with simultaneous imaging alongside green fluorescent protein-based indicators. The discoveries that sarcosine-based tertiary amides in the context of molecular-wire voltage indicators prevent dye internalization and 5'-substituted voltage indicators exhibit improved voltage sensitivity should be broadly applicable to other types of PeT-based voltage-sensitive fluorophores.

  4. Voltage controlled terahertz transmission through GaN quantum wells

    OpenAIRE

    Laurent, T.; Sharma, R.; Torres, J.; Nouvel, P; Blin, S.; Varani, L.; Cordier, Y.; Chmielowska, M.; Chenot, S.; Faurie, JP; Beaumont, B.; P. Shiktorov; Starikov, E.; Gruzinskis, V.; Korotyevyev, V.

    2011-01-01

    We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement ...

  5. Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse

    Science.gov (United States)

    Xiaowen, Xi; Changchun, Chai; Xingrong, Ren; Yintang, Yang; Zhenyang, Ma; Jing, Wang

    2010-07-01

    A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse (EMP) into the bipolar transistor (BJT) is carried out. Research shows that the increase of the external resistor Rb at base makes the burnout time of the device decrease slightly, the increase of the external voltage source Vbe at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage, and the increase of the external resistor Re can remarkably reduce the voltage drops added to the device and improve the durability of the device. In the final analysis, the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.

  6. Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse

    Energy Technology Data Exchange (ETDEWEB)

    Xi Xiaowen; Chai Changchun; Ren Xingrong; Yang Yintang; Ma Zhenyang; Wang Jing, E-mail: xixiaowen523103@163.co [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-07-15

    A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse (EMP) into the bipolar transistor (BJT) is carried out. Research shows that the increase of the external resistor R{sub b} at base makes the burnout time of the device decrease slightly, the increase of the external voltage source V{sub be} at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage, and the increase of the external resistor R{sub e} can remarkably reduce the voltage drops added to the device and improve the durability of the device. In the final analysis, the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.

  7. Emissive limiter bias experiment for improved confinement of tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Choe, W.; Ono, M.; Darrow, D.S. (Princeton Univ., NJ (United States). Plasma Physics Lab.); Pribyl, P.A.; Liberati, J.R.; Taylor, R.J. (California Univ., Los Angeles, CA (United States). Tokamak Fusion Lab.)

    1992-01-01

    Experiments have been performed in Ohmic discharges of the UCLA CCT tokamak with a LaB[sub 6] biased limiter, capable of emitting energetic electrons as a technique to improve confinement in tokamaks. To study the effects of emitted electrons, the limiter position, bias voltage, and plasma position were varied. The results have shown that the plasma positioning with respect to the emissive limiter plays an important role in obtaining H-mode plasmas. The emissive cathode must be located close to the last closed flux surface in order to charge up the plasma. As the cathode is moved closer to the wall, the positioning of the plasma becomes more critical since the plasma can easily detach from the cathode and reattach to the wall, resulting in the termination of H-mode. The emissive capability appears to be important for operating at lower bias voltage and reducing impurity levels in the plasma. With a heated cathode, transition to H-mode was observed for V[sub bias] [le] 50 V and I[sub inj] [ge] 30 A. At a lower cathode heater current, a higher bias voltage is required for the transition. Moreover, with a lower cathode heater current, the time delay for inducing H-mode becomes longer, which can be attributed to the required time for the self-heating of the cathode to reach the emissive temperature. From this result, we conclude that the capacity for emission can significantly improve the performance of limiter biasing for inducing H-mode transition. With L-mode plasmas, the injection current flowing out of the cathode was generally higher than 100 A.

  8. Emissive limiter bias experiment for improved confinement of tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Choe, W.; Ono, M.; Darrow, D.S. [Princeton Univ., NJ (United States). Plasma Physics Lab.; Pribyl, P.A.; Liberati, J.R.; Taylor, R.J. [California Univ., Los Angeles, CA (United States). Tokamak Fusion Lab.

    1992-10-01

    Experiments have been performed in Ohmic discharges of the UCLA CCT tokamak with a LaB{sub 6} biased limiter, capable of emitting energetic electrons as a technique to improve confinement in tokamaks. To study the effects of emitted electrons, the limiter position, bias voltage, and plasma position were varied. The results have shown that the plasma positioning with respect to the emissive limiter plays an important role in obtaining H-mode plasmas. The emissive cathode must be located close to the last closed flux surface in order to charge up the plasma. As the cathode is moved closer to the wall, the positioning of the plasma becomes more critical since the plasma can easily detach from the cathode and reattach to the wall, resulting in the termination of H-mode. The emissive capability appears to be important for operating at lower bias voltage and reducing impurity levels in the plasma. With a heated cathode, transition to H-mode was observed for V{sub bias} {le} 50 V and I{sub inj} {ge} 30 A. At a lower cathode heater current, a higher bias voltage is required for the transition. Moreover, with a lower cathode heater current, the time delay for inducing H-mode becomes longer, which can be attributed to the required time for the self-heating of the cathode to reach the emissive temperature. From this result, we conclude that the capacity for emission can significantly improve the performance of limiter biasing for inducing H-mode transition. With L-mode plasmas, the injection current flowing out of the cathode was generally higher than 100 A.

  9. A Perpendicular Biased 2nd Harmonic Cavity for the Fermilab Booster

    Energy Technology Data Exchange (ETDEWEB)

    Tan, C. Y.; Dey, J. [Fermilab; Madrak, R. L. [Fermilab; Pellico, W. [Fermilab; Romanov, G. [Fermilab; Sun, D. [Fermilab; Terechkine, I. [Fermilab

    2015-07-13

    A perpendicular biased 2nd harmonic cavity is currently being designed for the Fermilab Booster. Its purpose cavity is to flatten the bucket at injection and thus change the longitudinal beam distribution so that space charge effects are decreased. It can also with transition crossing. The reason for the choice of perpendicular biasing over parallel biasing is that the Q of the cavity is much higher and thus allows the accelerating voltage to be a factor of two higher than a similar parallel biased cavity. This cavity will also provide a higher accelerating voltage per meter than the present folded transmission line cavity. However, this type of cavity presents technical challenges that need to be addressed. The two major issues are cooling of the garnet material from the effects of the RF and the cavity itself from eddy current heating because of the 15 Hz bias field ramp. This paper will address the technical challenge of preventing the garnet from overheating.

  10. System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

    Science.gov (United States)

    Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

    1993-01-01

    A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

  11. Generation of Radial Electric Field with Electrode Biasing

    Institute of Scientific and Technical Information of China (English)

    WANG Cheng; PAN Ge-Sheng; WEN Yi-Zhi; YU Chang-Xuan; WAN Shu-De; LIU Wan-Dong; WANG Zhi-Jiang; SUN Xuan

    2001-01-01

    Time and space resolved measurements of the radial electric field (Er) have been conducted during the electrode biasing experiments on the KT-5C tokamak. The suppression of the turbulent transport with the change of Er induced by the biased electrode is observed. It is found that the poloidal flow contributes to the main part of the Er, and the change of the poloidal flow has a lead of about 20μs to the formation of Er. These observations suggest that a radialcurrent, responding to an induced voltage on the electrode, drives a poloidal flow which in turn drives the radial electric field.

  12. Josephson effects in an alternating current biased transition edge sensor

    CERN Document Server

    Gottardi, Luciano; Akamatsu, Hiroki; van der Kuur, Jan; Bruijn, Marcel P; Hartog, Roland H den; Hijmering, Richard; Khosropanah, Pourya; Lambert, Colin; van der Linden, Anton J; Ridder, Marcel L; Suzuki, Toyo; Gao, Jan R

    2016-01-01

    We report the experimental evidence of the ac Josephson effect in a transition edge sensor (TES) operating in a frequency domain multiplexer and biased by ac voltage at MHz frequencies. The effect is observed by measuring the non-linear impedance of the sensor. The TES is treated as a weakly linked superconducting system and within the resistively shunted junction model framework. We provide a full theoretical explanation of the results by finding the analytic solution of the non-inertial Langevian equation of the system and calculating the non-linear response of the detector to a large ac bias current in the presence of noise.

  13. Low voltage drop plasma switch for inverter and modulator applications

    Science.gov (United States)

    Goebel, D. M.; Poeschel, R. L.; Schumacher, R. W.

    1993-08-01

    A low forward voltage drop plasma switch has been developed for high-efficiency inverter and modulator applications. The switch, called the HOLLOTRON, is based on a grid-controlled, thermionic hollow-cathode discharge. A low forward voltage drop (10-20 V) is achieved by operating the hollow-cathode discharge in a static gas pressure of xenon. The dense plasma generated in the Ba-oxide dispenser hollow cathode is spread over a relatively large control grid area by a diverging magnetic field superimposed on the discharge. Interruption of the discharge current at high current densities (≳4 A/cm2) over the grid area is achieved by biasing the control grid sufficiently negative with respect to the plasma. The HOLLOTRON switch has demonstrated voltage stand-off of up to 20 kV, switching times of ≤0.3 μs, and pulse repetition frequencies of 20 kHz at 50% duty.

  14. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  15. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger;

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  16. High voltage switch triggered by a laser-photocathode subsystem

    Science.gov (United States)

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  17. Temperature trend biases

    Science.gov (United States)

    Venema, Victor; Lindau, Ralf

    2016-04-01

    In an accompanying talk we show that well-homogenized national dataset warm more than temperatures from global collections averaged over the region of common coverage. In this poster we want to present auxiliary work about possible biases in the raw observations and on how well relative statistical homogenization can remove trend biases. There are several possible causes of cooling biases, which have not been studied much. Siting could be an important factor. Urban stations tend to move away from the centre to better locations. Many stations started inside of urban areas and are nowadays more outside. Even for villages the temperature difference between the centre and edge can be 0.5°C. When a city station moves to an airport, which often happened around WWII, this takes the station (largely) out of the urban heat island. During the 20th century the Stevenson screen was established as the dominant thermometer screen. This screen protected the thermometer much better against radiation than earlier designs. Deficits of earlier measurement methods have artificially warmed the temperatures in the 19th century. Newer studies suggest we may have underestimated the size of this bias. Currently we are in a transition to Automatic Weather Stations. The net global effect of this transition is not clear at this moment. Irrigation on average decreases the 2m-temperature by about 1 degree centigrade. At the same time, irrigation has increased significantly during the last century. People preferentially live in irrigated areas and weather stations serve agriculture. Thus it is possible that there is a higher likelihood that weather stations are erected in irrigated areas than elsewhere. In this case irrigation could lead to a spurious cooling trend. In the Parallel Observations Science Team of the International Surface Temperature Initiative (ISTI-POST) we are studying influence of the introduction of Stevenson screens and Automatic Weather Stations using parallel measurements

  18. Bias in collegiate courts

    OpenAIRE

    Olowofoyeku, AA

    2016-01-01

    This article addresses the issues attending common law collegiate courts’ engagements with allegations of bias within their own ranks. It will be argued that, in such cases, it would be inappropriate to involve the collegiate panel or any member thereof in the decision, since such involvement inevitably encounters difficulties. The common law’s dilemmas require drastic solutions, but the common law arguably is illequipped to implement the required change. The answer, it will be argued, is ...

  19. Voltage Stability Improvement of Grid Connected Wind Driven Induction Generator Using Svc

    Directory of Open Access Journals (Sweden)

    Ruchi Aggarwal

    2014-05-01

    Full Text Available Voltage stability is one of the major problem associated with wind power generating system which may be due to fluctuating nature of wind, heavy load, fault occurrence or insufficient reactive power supply. The wind power generating system most commonly employed with squirrel cage induction generator(SCIG that needs the support of an external device such as capacitor bank, FACTS devices etc. to support reactive power in order to remain connected with the grid during voltage dips. The voltage stability of a wind driven induction generator can be improved by using FACTS devices such as SVC, STATCOM.In this paper svc is used for voltage stability improvement.

  20. Chemical detection and laser wavelength stabilization employing spectroscopic absorption via laser compliance voltage sensing

    Energy Technology Data Exchange (ETDEWEB)

    Taubman, Matthew S.; Phillips, Mark C.

    2016-01-12

    Systems and methods are disclosed that provide a direct indication of the presence and concentration of an analyte within the external cavity of a laser device that employ the compliance voltage across the laser device. The systems can provide stabilization of the laser wavelength. The systems and methods can obviate the need for an external optical detector, an external gas cell, or other sensing region and reduce the complexity and size of the sensing configuration.

  1. Behavioral Biases in Interpersonal Contexts

    NARCIS (Netherlands)

    N. Liu (Ning)

    2017-01-01

    markdownabstractThis thesis presents evidence suggesting that the same types of biases in individual decision making under uncertainty pertain in interpersonal contexts. The chapters above demonstrate in specific contexts how specific interpersonal factors attenuate, amplify, or replicate these bias

  2. High-frequency graphene voltage amplifier.

    Science.gov (United States)

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

  3. High-voltage pulsed generator for dynamic fragmentation of rocks.

    Science.gov (United States)

    Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  4. Direct detection of the parametrically generated half-harmonic voltage in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1976-01-01

    The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions a l...... a large-amplitude microwave signal is emitted at fp provided the input power exceeds a threshold value. The results are compared to existing theory. Applied Physics Letters is copyrighted by The American Institute of Physics.......The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions...

  5. Origin of the transition voltage in gold–vacuum–gold atomic junctions

    KAUST Repository

    Wu, Kunlin

    2012-12-13

    The origin and the distance dependence of the transition voltage of gold-vacuum-gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold-vacuum-gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold-vacuum-gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments. © 2013 IOP Publishing Ltd.

  6. Origin of the transition voltage in gold-vacuum-gold atomic junctions.

    Science.gov (United States)

    Wu, Kunlin; Bai, Meilin; Sanvito, Stefano; Hou, Shimin

    2013-01-18

    The origin and the distance dependence of the transition voltage of gold-vacuum-gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold-vacuum-gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold-vacuum-gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments.

  7. A METHOD FOR DETERMINING LOCATION OF VOLTAGE FLUCTUATIONS SOURCE IN ELECTRIC GRID

    Directory of Open Access Journals (Sweden)

    G.A. Senderovich

    2016-06-01

    Full Text Available Purpose. The purpose of work is development of a method of definition of the location of a source of fluctuations of voltage. Methodology. The reasons of emergence of fluctuations of voltage at an arrangement of a source both in power lines, and in the consumer's networks, are connected with changes of consumption and active and reactive capacities. As criterion for definition of the location of a source of fluctuations of voltage we choose change of size of the active power received by reception substation on equivalent communication with system. The source of fluctuations of voltage is external for the consumer if emergence of fluctuations of voltage leads to the coordinated changes of tension and consumed in the area of active power that corresponds to a condition of the positive regulating effect of active loading on voltage (1. The source of fluctuations of voltage is internal for the consumer if emergence of fluctuations of voltage leads to counter changes of tension and consumed in the area of active power that resembles a condition of the negative regulating effect of active loading on voltage superficially (6. Results. The method of definition of the location of a source of fluctuations of voltage in an electric network which, works by the principle of an assessment of correlation of change of power and tension in a power supply network is developed. The method allows to consider shift between extrema of curves of change of voltage of U(t and power of Pload(t. Originality. The method of definition of an arrangement of a source of fluctuations of voltage is developed. Practical value. The answer to this question where the source of fluctuations of voltage (in the territory of the consumer is located or in an external network confirmed with the determined calculation, can form a basis of the expert opinion for the solution of legal disputes at an assessment of the damages caused by poor quality of electric energy.

  8. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  9. Assessing Bias in Search Engines.

    Science.gov (United States)

    Mowshowitz, Abbe; Kawaguchi, Akira

    2002-01-01

    Addresses the measurement of bias in search engines on the Web, defining bias as the balance and representation of items in a collection retrieved from a database for a set of queries. Assesses bias by measuring the deviation from the ideal of the distribution produced by a particular search engine. (Author/LRW)

  10. Theory of quantum transport in disordered systems driven by voltage pulse

    Science.gov (United States)

    Zhou, Chenyi; Chen, Xiaobin; Guo, Hong

    2016-08-01

    Predicting time-dependent quantum transport in the transient regime is important for understanding the intrinsic dynamic response of a nanodevice and for predicting the limit of how such a device can switch on or off a current. Theoretically, this problem becomes quite difficult to solve when the nanodevice contains disorder because the calculated transient current must be averaged over many disorder configurations. In this work, we present a theoretical formalism to calculate the configuration averaged time-dependent current flowing through a phase coherent device containing disorder sites where the transient current is driven by sharply turning on and off the external bias voltage. Our theory is based on the Keldysh nonequilibrium Green's function (NEGF) formalism and is applicable in the far from equilibrium nonlinear response quantum transport regime. The effects of disorder scattering are dealt with by the coherent potential approximation (CPA) extended in the time domain. We show that after approximations such as CPA and vertex corrections for calculating the multiple impurity scattering in the transient regime, the derived NEGFs perfectly satisfy a Ward identity. The theory is quantitatively verified by comparing its predictions to the exact solution for a tight-binding model of a disordered two-probe transport junction.

  11. Externally Verifiable Oblivious RAM

    Directory of Open Access Journals (Sweden)

    Gancher Joshua

    2017-04-01

    Full Text Available We present the idea of externally verifiable oblivious RAM (ORAM. Our goal is to allow a client and server carrying out an ORAM protocol to have disputes adjudicated by a third party, allowing for the enforcement of penalties against an unreliable or malicious server. We give a security definition that guarantees protection not only against a malicious server but also against a client making false accusations. We then give modifications of the Path ORAM [15] and Ring ORAM [9] protocols that meet this security definition. These protocols both have the same asymptotic runtimes as the semi-honest original versions and require the external verifier to be involved only when the client or server deviates from the protocol. Finally, we implement externally verified ORAM, along with an automated cryptocurrency contract to use as the external verifier.

  12. External Beam Therapy (EBT)

    Science.gov (United States)

    ... Esophageal Cancer Treatment Head and Neck Cancer Treatment Lung Cancer Treatment Prostate Cancer Treatment Brain Tumor Treatment Why is ... Radiation Oncology) Breast Cancer Treatment Esophageal Cancer Treatment Lung Cancer Treatment Images related to External Beam Therapy (EBT) Sponsored ...

  13. MALIGNANT EXTERNAL OTITIS

    OpenAIRE

    Massoud Moghaddam

    1993-01-01

    Two case reports of malignant external otitis in the elderly diabetics and their complications and management with regard to our experience at Amir Alam Hospital, Department of ENT will be discussed here.

  14. Checklists for external validity

    DEFF Research Database (Denmark)

    Dyrvig, Anne-Kirstine; Kidholm, Kristian; Gerke, Oke;

    2014-01-01

    RATIONALE, AIMS AND OBJECTIVES: The quality of the current literature on external validity varies considerably. An improved checklist with validated items on external validity would aid decision-makers in judging similarities among circumstances when transferring evidence from a study setting...... to an implementation setting. In this paper, currently available checklists on external validity are identified, assessed and used as a basis for proposing a new improved instrument. METHOD: A systematic literature review was carried out in Pubmed, Embase and Cinahl on English-language papers without time restrictions....... The retrieved checklist items were assessed for (i) the methodology used in primary literature, justifying inclusion of each item; and (ii) the number of times each item appeared in checklists. RESULTS: Fifteen papers were identified, presenting a total of 21 checklists for external validity, yielding a total...

  15. The self-attribution bias and paranormal beliefs.

    Science.gov (United States)

    van Elk, Michiel

    2017-02-22

    The present study investigated the relation between paranormal beliefs, illusory control and the self-attribution bias, i.e., the motivated tendency to attribute positive outcomes to oneself while negative outcomes are externalized. Visitors of a psychic fair played a card guessing game and indicated their perceived control over randomly selected cards as a function of the congruency and valence of the card. A stronger self-attribution bias was observed for paranormal believers compared to skeptics and this bias was specifically related to traditional religious beliefs and belief in superstition. No relation between paranormal beliefs and illusory control was found. Self-report measures indicated that paranormal beliefs were associated to being raised in a spiritual family and to anomalous experiences during childhood. Thereby this study suggests that paranormal beliefs are related to specific cognitive biases that in turn are shaped by socio-cultural factors.

  16. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M; de Mendizabal, J. Bilbao; Chen, H; Chen, K; Di Bello, F.A; Ferrere, D; Golling, T; Gonzalez-Sevilla, S; Iacobucci, G; Lanni, F; Liu, H; Meng, L; Miucci, A; Muenstermann, D; Nessi, M; Peric, I; Rimoldi, M; Ristic, B; Pinto, M. Vicente Barrero; Vossebeld, J; Weber, M; Wu, W; Xu, L

    2016-01-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  17. Migration with fiscal externalities.

    Science.gov (United States)

    Hercowitz, Z; Pines, D

    1991-11-01

    "This paper analyses the distribution of a country's population among regions when migration involves fiscal externalities. The main question addressed is whether a decentralized decision making [by] regional governments can produce an optimal population distribution...or a centralized intervention is indispensable, as argued before in the literature.... It turns out that, while with costless mobility the fiscal externality is fully internalized by voluntary interregional transfers, with costly mobility, centrally coordinated transfers still remain indispensable for achieving the socially optimal allocation."

  18. Sen cycles and externalities

    OpenAIRE

    Piggins, Ashley; Salerno, Gillian

    2016-01-01

    It has long been understood that externalities of some kind are responsible for Sen’s (1970) theorem on the impossibility of a Paretian liberal. However, Saari and Petron (2006) show that for any social preference cycle generated by combining the weak Pareto principle and individual decisiveness, every decisive individual must suffer at least one strong negative externality. We show that this fundamental result only holds when individual preferences are strict. Building on their contribution,...

  19. Unlikely Combination of Experiments With a Novel High-Voltage CIGS Photovoltaic Array: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Sekulic, B. R.

    2006-05-01

    A new high-voltage array comprising bipolar strings of copper indium gallium diselenide (CIGS) photovoltaic (PV) modules was inaugurated in 2005. It is equipped with a unique combination of tests, which likely have never before been deployed simultaneously within a single array: full current-voltage (I-V) traces, high-voltage leakage current measurements, and peak-power tracking or temporal stepped-bias profiling. The array nominally produces 1 kW power at 1 sun. The array's electrical characteristics are continuously monitored and controlled with a programmable electronic load interfaced to a data acquisition system (DAS), that also records solar and meteorological data. The modules are mounted with their frames electrically isolated from earth ground, in order to facilitate measurement of the leakage currents that arise between the high voltage bias developed in the series-connected cells and modules and their mounting frames. Because the DAS can perform stepped biasing of the array as a function of time, synchronous detection of the leakage current data with alternating bias is available. Leakage current data and their dependence on temperature and voltage are investigated. Array power data are analyzed across a wide range of varying illuminations and temperatures from the I-V traces. Array performance is also analyzed from an energy output perspective using peak-power tracking data.

  20. Flow reversal at low voltage and low frequency in a microfabricated ac electrokinetic pump

    DEFF Research Database (Denmark)

    Gregersen, Misha Marie; Olesen, Laurits Højgaard; Brask, Anders

    2007-01-01

    Microfluidic chips have been fabricated in Pyrex glass to study electrokinetic pumping generated by a low-voltage ac bias applied to an in-channel asymmetric metallic electrode array. A measurement procedure has been established and followed carefully resulting in a high degree of reproducibility...... of the measurements over several days. A large coverage fraction of the electrode array in the microfluidic channels has led to an increased sensitivity allowing for pumping measurements at low bias voltages. Depending on the ionic concentration a hitherto unobserved reversal of the pumping direction has been...

  1. Electronic properties of a biased graphene bilayer

    Energy Technology Data Exchange (ETDEWEB)

    Castro, Eduardo V; Lopes dos Santos, J M B [CFP and Departamento de Fisica, Faculdade de Ciencias Universidade do Porto, P-4169-007 Porto (Portugal); Novoselov, K S; Morozov, S V; Geim, A K [Department of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Peres, N M R [Centre of Physics and Departamento de Fisica, Universidade do Minho, P-4710-057 Braga (Portugal); Nilsson, Johan; Castro Neto, A H [Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, MA 02215 (United States); Guinea, F [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid (Spain)

    2010-05-05

    We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system-a biased bilayer. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its four-band and two-band continuum approximations, and the four-band model is shown to always be a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, made out of either SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point for understanding the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, such as the second-nearest-neighbour hopping energies t' (in-plane) and {gamma}{sub 4} (inter-layer), and the on-site energy {Delta}.

  2. Electronic properties of a biased graphene bilayer.

    Science.gov (United States)

    Castro, Eduardo V; Novoselov, K S; Morozov, S V; Peres, N M R; Lopes dos Santos, J M B; Nilsson, Johan; Guinea, F; Geim, A K; Castro Neto, A H

    2010-05-01

    We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system-a biased bilayer. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its four-band and two-band continuum approximations, and the four-band model is shown to always be a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, made out of either SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point for understanding the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, such as the second-nearest-neighbour hopping energies t' (in-plane) and γ(4) (inter-layer), and the on-site energy Δ.

  3. Effect of Discharge Voltage on an Ion Sheath Formed at a Grid in a Multi-Dipole Discharge Plasma

    Institute of Scientific and Technical Information of China (English)

    M.K.Mishra; A.Phukan

    2008-01-01

    @@ It is experimentally demonstrated that a relatively strong ion-rich sheath formed at a fixed negative bias of the grid can be changed to arather weak ion sheath(sheath potential weakly retards dectrons)only by increasing the discharge voltage in the system.At sufficiently high negative grid bias,an increase of discharge voltage enhances the ion collection current at the grid.An explanation is put forward in support of this experimental observation.A slight density enhancement with a fall in plasma electron temperature is also observed with the increasing negative grid bias.

  4. External ionization mechanisms for advanced thermionic converters

    Science.gov (United States)

    Hatziprokopiou, M. E.

    Ion generation and recombination mechanisms in the cesium plasma were investigated as they pertain to the advanced mode thermionic energy converters. The changes in plasma density and temperature within the converter were studied under the influence of several promising auxiliary ionization candidate sources. Three novel approaches of external cesium ion generation were investigated in some detail, namely vibrationally excited N2 as an energy source of ionization of Cs ions in a DC discharge, microwave power as a means of resonant sustenance of the cesium plasma, and ion generation in a pulse N2-Cs mixture. The experimental data obtained and discussed in this work show that all three techniques--i.e. the non-LTE high-voltage pulsing, the energy transfer from vibrationally excited diatomic gases, and the external pumping with a microwave power--have considerable promise as schemes in auxiliary ion generation applicable to the advanced thermionic energy converter.

  5. Current-biased Transition-edge Sensors Based on Re-entrant Superconductors

    Science.gov (United States)

    Gulian, A.; Nikoghosyan, V.; Tollaksen, J.; Vardanyan, V.; Kuzanyan, A.

    Transition-edge sensors are widely recognized as one of the most sensitive tools for the photon and particles detection in many areas, from astrophysics to quantum computing. Their application became practical after understanding that rather than being biased in a constant current mode, they should be biased in a constant voltage mode. Despite the methods of voltage biasing of these sensors are well developed since then, generally the current biasing is more convenient for superconducting circuits. Thus transition-edge sensors designed inherently to operate in the current-biased mode are desirable. We developed a design for such detectors based on re-entrant superconductivity. In this case constant current biasing takes place in the normal state, below the superconducting transition, so that following the absorption of a photon it does not yield a latching. Rather, the sensor gains energy and shifts towards the lower resistant (e.g., superconducting) state, and then cools down faster (since Joule heating is now reduced), and resets in a natural way to be able to detect the next photon. We prototyped this kind of transition edge sensors and tested them operational in accordance with the outlined physics. The samples used in experiments were modified compositions of YBCO-superconductors in a ceramic form (which, as we discovered, reproducibly demonstrates re-entrant superconductivity). In this presentation we report their composition, methods of preparation, and the detection results. This approach, in some areas, may have practical advantage over the traditional voltage-biased devices.

  6. Bias aware Kalman filters

    DEFF Research Database (Denmark)

    Drecourt, J.-P.; Madsen, H.; Rosbjerg, Dan

    2006-01-01

    . The colored noise filter formulation is extended to correct both time correlated and uncorrelated model error components. A more stable version of the separate filter without feedback is presented. The filters are implemented in an ensemble framework using Latin hypercube sampling. The techniques...... are illustrated on a simple one-dimensional groundwater problem. The results show that the presented filters outperform the standard Kalman filter and that the implementations with bias feedback work in more general conditions than the implementations without feedback. 2005 Elsevier Ltd. All rights reserved....

  7. Operation and biasing for single device equivalent to CMOS

    Science.gov (United States)

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  8. Low frequency fluctuation with two external cavity reflectors

    Institute of Scientific and Technical Information of China (English)

    王春林; 伍剑; 林金桐

    2003-01-01

    The dynamics of a semiconductor laser with two optical feedbacks is studied in this paper. A new set of nonlinear rate equations that can describe external cavity semiconductor lasers with any amount of two optical feedbacks is proposed. It is found that when the laser is biased above the threshold and subjected to one feedback, the other feedback can induce low-frequency fluctuations.

  9. Cardiac stimulation with high voltage discharge from stun guns.

    Science.gov (United States)

    Nanthakumar, Kumaraswamy; Massé, Stephane; Umapathy, Karthikeyan; Dorian, Paul; Sevaptsidis, Elias; Waxman, Menashe

    2008-05-20

    The ability of an electrical discharge to stimulate the heart depends on the duration of the pulse, the voltage and the current density that reaches the heart. Stun guns deliver very short electrical pulses with minimal amount of current at high voltages. We discuss external stimulation of the heart by high voltage discharges and review studies that have evaluated the potential of stun guns to stimulate cardiac muscle. Despite theoretical analyses and animal studies which suggest that stun guns cannot and do not affect the heart, 3 independent investigators have shown cardiac stimulation by stun guns. Additional research studies involving people are needed to resolve the conflicting theoretical and experimental findings and to aid in the design of stun guns that are unable to stimulate the heart.

  10. Reduction in plasma potential by applying negative DC cathode bias in RF magnetron sputtering

    Science.gov (United States)

    Isomura, Masao; Yamada, Toshinori; Osuga, Kosuke; Shindo, Haruo

    2016-11-01

    We applied a negative DC bias voltage to the cathode of an RF magnetron sputtering system and successfully reduced the plasma potential in both argon plasma and hydrogen-diluted argon plasma. The crystallinity of the deposited Ge films is improved by increasing the negative DC bias voltage. It is indicated that the reduction in plasma potential is effective for reducing the plasma damage on deposited materials, caused by the electric potential between the plasma and substrates. In addition, the deposition rate is increased by the increased electric potential between the plasma and the cathode owing to the negative DC bias voltage. The present method successfully gives us higher speed and lower damage sputtering deposition. The increased electric potential between the plasma and the cathode suppresses the evacuation of electrons from the plasma and also enhances the generation of secondary electrons on the cathode. These probably suppress the electron loss from the plasma and result in the reduction in plasma potential.

  11. 境内个人直接对外证券投资对A股市场的影响——以资金"本土偏好"为视角%The Influence of the Domestic Personal Direct External Securities Investment on A-Stock Market: from the Perspective of the "Home Bias" of Capital

    Institute of Scientific and Technical Information of China (English)

    陈蕾

    2007-01-01

    从行为金融学的"本土偏好(Home Bias)"理论谈起,结合国际经验与我国A股市场的特点,分析国家外汇管理局允许境内个人直接对外证券投资政策将对我国A股市场所造成的影响.

  12. Implementation of a Capacitor Less Low Dropout Voltage Regulator on Chip (SOC

    Directory of Open Access Journals (Sweden)

    Shailika Sharma

    2014-06-01

    Full Text Available — In this paper we have implemented a linear voltage low drop out regulator for efficient power management considering the fact in mind that voltage regulators provide a constant voltage supply to the circuits. We replace the common drain by common source pass element to improve efficiency and reduce the voltage drop across the device. This research paper includes the process to remove the external capacitor allowing for greater power system (soc application. A compensation scheme is presented that provides both a fast transient response and full range alternating current (ac stability from 0 to 50 mA load current even if the output load is as high as 100 pf. A 2.7-v capacitorless LDO voltage regulator with a power supply 3 v was designed with a dropout voltage of 300 mv.

  13. Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies

    Energy Technology Data Exchange (ETDEWEB)

    Brendel, Moritz, E-mail: moritz.brendel@fbh-berlin.de; Helbling, Markus; Knigge, Andrea; Brunner, Frank; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2015-12-28

    A comprehensive study on top- and bottom-illuminated Al{sub 0.5}Ga{sub 0.5}N/AlN metal-semiconductor-metal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external quantum efficiency (EQE) shows pronounced threshold and saturation behavior as a function of applied bias voltage up to 50 V reaching about 50% for 0.1 μm and 67% for 0.5 μm thick absorber layers under bottom illumination. All experimental findings are in very good accordance with two-dimensional drift-diffusion modeling results. By taking into account macroscopic polarization effects in the hexagonal metal-polar +c-plane AlGaN/AlN heterostructures, new insights into the general device functionality of AlGaN-based MSM photodetectors are obtained. The observed threshold/saturation behavior is caused by a bias-dependent extraction of photoexcited holes from the Al{sub 0.5}Ga{sub 0.5}N/AlN interface. While present under bottom illumination for any AlGaN layer thickness, under top illumination this mechanism influences the EQE-bias characteristics only for thin layers.

  14. Voltage Sensors Monitor Harmful Static

    Science.gov (United States)

    2009-01-01

    A tiny sensor, small enough to be worn on clothing, now monitors voltage changes near sensitive instruments after being created to alert Agency workers to dangerous static buildup near fuel operations and avionics. San Diego s Quasar Federal Systems received a Small Business Innovation Research (SBIR) contract from Kennedy Space Center to develop its remote voltage sensor (RVS), a dime-sized electrometer designed to measure triboelectric changes in the environment. One of the unique qualities of the RVS is that it can detect static at greater distances than previous devices, measuring voltage changes from a few centimeters to a few meters away, due to its much-improved sensitivity.

  15. Environmental external effects from wind power based on the EU ExternE methodology

    DEFF Research Database (Denmark)

    Ibsen, Liselotte Schleisner; Nielsen, Per Sieverts

    1998-01-01

    The European Commission has launched a major study project, ExternE, to develop a methodology to quantify externalities. A “National Implementation Phase”, was started under the Joule II programme with the purpose of implementing the ExternE methodology in all member states. The main objective...

  16. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Marzocchi, Badder

    2017-01-01

    The CMS Electromagnetic Calorimeter is made of scintillating lead tungstate crystals, using avalanche photodiodes (APD) as photo-detectors in the barrel part. The high voltage system, consisting of 1224 channels, biases groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  17. Editorial bias in scientific publications.

    Science.gov (United States)

    Matías-Guiu, J; García-Ramos, R

    2011-01-01

    Many authors believe that there are biases in scientific publications. Editorial biases include publication bias; which refers to those situations where the results influence the editor's decision, and editorial bias refers to those situations where factors related with authors or their environment influence the decision. This paper includes an analysis of the situation of editorial biases. One bias is where mainly articles with positive results are accepted, as opposed to those with negative results. Another is latent bias, where positive results are published before those with negative results. In order to examine editorial bias, this paper analyses the influence of where the article originated; the country or continent, academic centre of origin, belonging to cooperative groups, and the maternal language of the authors. The article analyses biases in the editorial process in the publication of funded clinical trials. Editorial biases exists. Authors, when submitting their manuscript, should analyse different journals and decide where their article will receive adequate treatment. Copyright © 2010 Sociedad Española de Neurología. Published by Elsevier Espana. All rights reserved.

  18. Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

    Science.gov (United States)

    Yen, Cheng-Tyng; Hung, Chien-Chung; Hung, Hsiang-Ting; Lee, Chwan-Ying; Lee, Lurng-Shehng; Huang, Yao-Feng; Hsu, Fu-Jen

    2016-01-01

    We investigated the negative bias temperature instability (NBTI) characteristics of 4H-SiC metal oxide semiconductor field effect transistor (MOSFET) and metal oxide semiconductor capacitor (MOSCAP). The shift of threshold voltage approached saturation with time, and the different magnitude of mid-gap voltage shift with different starting biases observed in capacitance-voltage (CV) curves taken from MOSCAP and MOSFET suggested that the hole trapping was the primary mechanism contributing to the NBTI in this study. The trend of mid-gap voltage shift with starting bias and threshold voltage shift with stress bias showed steep change before -10 V and approached saturation after -10 V which can be explained by a process where the hole trapping was assisted by positively charged interface states. The positively charged interface states may have acted as an intermediate state which reduced the overall energy barrier and facilitated the process of hole trapping. The split-CV sweeps with 0 s and 655 s of hold time were essentially overlapped which was consistent with the time evolution characteristic of hole trapping and supported the interface trap assisted hole trapping mechanism.

  19. Externality or sustainability economics?

    Energy Technology Data Exchange (ETDEWEB)

    Bergh, Jeroen C.J.M. van den [ICREA, Barcelona (Spain); Department of Economics and Economic History and Institute for Environmental Science and Technology, Universitat Autonoma de Barcelona (Spain)

    2010-09-15

    In an effort to develop 'sustainability economics' Baumgaertner and Quaas (2010) neglect the central concept of environmental economics-'environmental externality'. This note proposes a possible connection between the concepts of environmental externality and sustainability. In addition, attention is asked for other aspects of 'sustainability economics', namely the distinction weak/strong sustainability, spatial sustainability and sustainable trade, distinctive sustainability policy, and the ideas of early 'sustainability economists'. I argue that both sustainability and externalities reflect a systems perspective and propose that effective sustainability solutions require that more attention is given to system feedbacks, notably other-regarding preferences and social interactions, and energy and environmental rebound. The case of climate change and policy is used to illustrate particular statements. As a conclusion, a list of 20 insights and suggestions for research is offered. (author)

  20. Metasurface external cavity laser

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Luyao, E-mail: luyaoxu.ee@ucla.edu; Curwen, Christopher A.; Williams, Benjamin S. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); California NanoSystems Institute, University of California, Los Angeles, California 90095 (United States); Hon, Philip W. C.; Itoh, Tatsuo [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Chen, Qi-Sheng [Northrop Grumman Aerospace Systems, Redondo Beach, California 90278 (United States)

    2015-11-30

    A vertical-external-cavity surface-emitting-laser is demonstrated in the terahertz range, which is based upon an amplifying metasurface reflector composed of a sub-wavelength array of antenna-coupled quantum-cascade sub-cavities. Lasing is possible when the metasurface reflector is placed into a low-loss external cavity such that the external cavity—not the sub-cavities—determines the beam properties. A near-Gaussian beam of 4.3° × 5.1° divergence is observed and an output power level >5 mW is achieved. The polarized response of the metasurface allows the use of a wire-grid polarizer as an output coupler that is continuously tunable.

  1. External quantum efficiency of Pt/n-GaN Schottky diodes in the spectral range 5-500nm

    Energy Technology Data Exchange (ETDEWEB)

    Aslam, Shahid [Raytheon ITSS, 4400 Forbes Boulevard, Lanham, MD 20706 (United States) and Goddard Space Flight Center, NASA, Bld. 11, Rm E015, Greenbelt, MD 20771 (United States)]. E-mail: saslam@pop200.gsfc.nasa.gov; Vest, Robert E. [National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899 (United States); Franz, David [Raytheon ITSS, 4400 Forbes Boulevard, Lanham, MD 20706 (United States); Goddard Space Flight Center, NASA, Bld. 11, Rm E015, Greenbelt, MD 20771 (United States); Yan Feng [Raytheon ITSS, 4400 Forbes Boulevard, Lanham, MD 20706 (United States); Goddard Space Flight Center, NASA, Bld. 11, Rm E015, Greenbelt, MD 20771 (United States); Zhao Yuegang [Keithley Instruments, Inc., 30500 Bainbridge Rd., Cleveland, OH 44139-2216 (United States); Mott, Brent [Goddard Space Flight Center, NASA, Bld. 11, Rm E015, Greenbelt, MD 20771 (United States)

    2005-02-21

    The external quantum efficiency in the spectral wavelength range 5-500nm of a large active area Pt/n-type GaN Schottky photodiode that exhibits low reverse bias leakage current, is reported. The Schottky photodiodes were fabricated from n{sup -}/n{sup +} epitaxial layers grown by low pressure metalorganic vapour phase epitaxy on single crystal c-plane sapphire. The current-voltage (I-V) characteristics of several 0.25cm{sup 2} devices are presented together with the capacitance-voltage (C-V) characteristics of one of these devices. A leakage current as low as 14 pA at 0.5V reverse bias is reported, for a 0.25cm{sup 2} diode. The ultraviolet quantum efficiency measurements show that the diodes can be used as radiation hard detectors for the 5-365nm spectral range without the use of visible blocking filters. A peak responsivity of 77.5mA/W at 320nm is reported for one of the fabricated devices, corresponding to a spectral detectivity, D*=1.5x10{sup 14}cmHz{sup 1/2}W{sup -1}. The average detectivity between 250 and 350nm, for the same device, is reported to be D-bar*=1.3x10{sup 14}cmHz{sup 1/2}W{sup -1}. The spatial responsivity uniformity variation was established, using H{sub 2} Lyman-{alpha} radiation, to be +/-3% across the surface of a typical 0.25cm{sup 2} diode.

  2. Outcome predictability biases learning.

    Science.gov (United States)

    Griffiths, Oren; Mitchell, Chris J; Bethmont, Anna; Lovibond, Peter F

    2015-01-01

    Much of contemporary associative learning research is focused on understanding how and when the associative history of cues affects later learning about those cues. Very little work has investigated the effects of the associative history of outcomes on human learning. Three experiments extended the "learned irrelevance" paradigm from the animal conditioning literature to examine the influence of an outcome's prior predictability on subsequent learning of relationships between cues and that outcome. All 3 experiments found evidence for the idea that learning is biased by the prior predictability of the outcome. Previously predictable outcomes were readily associated with novel predictive cues, whereas previously unpredictable outcomes were more readily associated with novel nonpredictive cues. This finding highlights the importance of considering the associative history of outcomes, as well as cues, when interpreting multistage designs. Associative and cognitive explanations of this certainty matching effect are discussed.

  3. Low Voltage Power Supply Incorporating Ceramic Transformer

    CERN Document Server

    Imori, M

    2007-01-01

    A low voltage power supply provides the regulated output voltage of 1 V from the supply voltage around 48 V. The low voltage power supply incorporates a ceramic transformer which utilizes piezoelectric effect to convert voltage. The ceramic transformer isolates the secondary from the primary, thus providing the ground isolation between the supply and the output voltages. The ceramic transformer takes the place of the conventional magnetic transformer. The ceramic transformer is constructed from a ceramic bar and does not include any magnetic material. So the low voltage power supply can operate under a magnetic field. The output voltage is stabilized by feedback. A feedback loop consists of an error amplifier, a voltage controlled oscillator and a driver circuit. The amplitude ratio of the transformer has dependence on the frequency, which is utilized to stabilize the output voltage. The low voltage power supply is investigated on the analogy of the high voltage power supply similarly incorporating the cerami...

  4. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  5. Correlation between exchange bias and pinned interfacial spins.

    Science.gov (United States)

    Ohldag, H; Scholl, A; Nolting, F; Arenholz, E; Maat, S; Young, A T; Carey, M; Stöhr, J

    2003-07-04

    Using x-ray magnetic circular dichroism, we have detected the very interfacial spins that are responsible for the horizontal loop shift in three different exchange bias sandwiches, chosen because of their potential for device applications. The "pinned" uncompensated interfacial spins constitute only a fraction of a monolayer and do not rotate in an external magnetic field since they are tightly locked to the antiferromagnetic lattice. A simple extension of the Meiklejohn and Bean model is proposed to account quantitatively for the exchange bias fields in the three studied systems from the experimentally determined number of pinned moments and their sizes.

  6. Manakov Soliton Pairs in Biased Photovoltaic Photorefractive Crystals

    Institute of Scientific and Technical Information of China (English)

    侯春风; 杜春光; 阿不都热苏力; 李师群

    2002-01-01

    We study, theoretically, incoherently coupled screening-photovoltaic soliton pairs in biased photovoltaic photorefractive crystals. It is shown that when the total intensity of two coupled solitons is much lower than the effective dark irradiance, the coupled soliton equations reduce to the Manakov equations. The dark-dark, bright-bright and dark-bright soliton pair solutions of these Manakov equations are obtained under an appropriate external bias field and a photovoltaic field, and the characteristics of these Manakov soliton pairs are also discussed in detail.

  7. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, Jr., Edward I. (Albuquerque, NM)

    2000-01-01

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  8. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, E.I. Jr.

    2000-06-20

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  9. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W.; Silverstein, Brian L. [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  10. A Voltage Quality Detection Method

    DEFF Research Database (Denmark)

    Chen, Zhe; Wei, Mu

    2008-01-01

    This paper presents a voltage quality detection method based on a phase-locked loop (PLL) technique. The technique can detect the voltage magnitude and phase angle of each individual phase under both normal and fault power system conditions. The proposed method has the potential to evaluate vario...... power quality disturbances, such as interruptions, sags and imbalances. Simulation studies have been performed. The effectiveness of the proposed method has been demonstrated under the simulated typical power disturbances....

  11. Self-calibration method of the bias of a space electrostatic accelerometer

    Science.gov (United States)

    Qu, Shao-Bo; Xia, Xiao-Mei; Bai, Yan-Zheng; Wu, Shu-Chao; Zhou, Ze-Bing

    2016-11-01

    The high precision space electrostatic accelerometer is an instrument to measure the non-gravitational forces acting on a spacecraft. It is one of the key payloads for satellite gravity measurements and space fundamental physics experiments. The measurement error of the accelerometer directly affects the precision of gravity field recovery for the earth. This paper analyzes the sources of the bias according to the operating principle and structural constitution of the space electrostatic accelerometer. Models of bias due to the asymmetry of the displacement sensing system, including the mechanical sensor head and the capacitance sensing circuit, and the asymmetry of the feedback control actuator circuit are described separately. According to the two models, a method of bias self-calibration by using only the accelerometer data is proposed, based on the feedback voltage data of the accelerometer before and after modulating the DC biasing voltage (Vb) applied on its test mass. Two types of accelerometer biases are evaluated separately using in-orbit measurement data of a space electrostatic accelerometer. Based on the preliminary analysis, the bias of the accelerometer onboard of an experiment satellite is evaluated to be around 10-4 m/s2, about 4 orders of magnitude greater than the noise limit. Finally, considering the two asymmetries, a comprehensive bias model is analyzed. A modified method to directly calibrate the accelerometer comprehensive bias is proposed.

  12. A matter of quantum voltages.

    Science.gov (United States)

    Sellner, Bernhard; Kathmann, Shawn M

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V(o))--the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V(o) from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V(o) for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V(o) as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  13. Obesity, the endocannabinoid system, and bias arising from pharmaceutical sponsorship.

    Directory of Open Access Journals (Sweden)

    John M McPartland

    Full Text Available BACKGROUND: Previous research has shown that academic physicians conflicted by funding from the pharmaceutical industry have corrupted evidence based medicine and helped enlarge the market for drugs. Physicians made pharmaceutical-friendly statements, engaged in disease mongering, and signed biased review articles ghost-authored by corporate employees. This paper tested the hypothesis that bias affects review articles regarding rimonabant, an anti-obesity drug that blocks the central cannabinoid receptor. METHODS/PRINCIPAL FINDINGS: A MEDLINE search was performed for rimonabant review articles, limited to articles authored by USA physicians who served as consultants for the company that manufactures rimonabant. Extracted articles were examined for industry-friendly bias, identified by three methods: analysis with a validated instrument for monitoring bias in continuing medical education (CME; analysis for bias defined as statements that ran contrary to external evidence; and a tally of misrepresentations about the endocannabinoid system. Eight review articles were identified, but only three disclosed authors' financial conflicts of interest, despite easily accessible information to the contrary. The Takhar CME bias instrument demonstrated statistically significant bias in all the review articles. Biased statements that were nearly identical reappeared in the articles, including disease mongering, exaggerating rimonabant's efficacy and safety, lack of criticisms regarding rimonabant clinical trials, and speculations about surrogate markers stated as facts. Distinctive and identical misrepresentations regarding the endocannabinoid system also reappeared in articles by different authors. CONCLUSIONS: The findings are characteristic of bias that arises from financial conflicts of interest, and suggestive of ghostwriting by a common author. Resolutions for this scenario are proposed.

  14. Diffusion voltage in polymer light emitting diodes measured with electric field induced second harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Kristensen, P.K.; Rafaelsen, J.; Pedersen, T.G.; Pedersen, K. [Department of Physics and Nanotechnology, Aalborg University, Pontoppidanstraede 103, 9220 Aalborg East (Denmark)

    2005-12-01

    We apply electric field induced second harmonic (EFISH) to polymer light emitting diodes (PLEDs) and demonstrate the ability to determine the diffusion voltage in PLED devices. The EFISH signal is proportional to the square of the effective field, which is the sum of the diffusion voltage and the applied voltage. By minimizing the EFISH-signal as a function of the applied voltage, the diffusion voltage is determined by measuring the applied voltage that cancels out the diffusion voltage. The PLEDs are fabricated with indium tin oxide (ITO) as the hole injecting contact and two different electron injecting contacts, namely aluminum and calcium. The diffusion voltage originates from the rearranged charges caused by the difference in Fermi levels in the materials in the PLEDs. Different contacts will thus cause different diffusion voltages. We demonstrate here that the EFISH signal is proportional to the square of the effective field in both reverse and forward bias, and discuss the dependence on contact materials. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK

    African Journals Online (AJOL)

    VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK: A CASE STUDY OF RUMUOLA DISTRIBUTION NETWORK. ... The artificial neural networks controller engaged to controlling the dynamic voltage ... Article Metrics.

  16. Theoretical investigation of exchange bias

    Institute of Scientific and Technical Information of China (English)

    Xiong Zhi-Jie; Wang Huai-Yu; Ding Ze-Jun

    2007-01-01

    The exchange bias of bilayer magnetic films consisting of ferromagnetic (FM) and antiferromagnetic (AFM) layers in an uncompensated case is studied by use of the many-body Green's function method of quantum statistical theory.The effects of the layer thickness and temperature and the interfacial coupling strength on the exchange bias HE are investigated. The dependence of the exchange bias HE on the FM layer thickness and temperature is qualitatively in agreement with experimental results. When temperature varies, both the coercivity HC and HE decrease with the temperature increasing. For each FM thickness, there exists a least AFM thickness in which the exchange bias occurs,which is called pinning thickness.

  17. Stochastic Control - External Models

    DEFF Research Database (Denmark)

    Poulsen, Niels Kjølstad

    2005-01-01

    This note is devoted to control of stochastic systems described in discrete time. We are concerned with external descriptions or transfer function model, where we have a dynamic model for the input output relation only (i.e.. no direct internal information). The methods are based on LTI systems...

  18. Productivity Change and Externalities

    DEFF Research Database (Denmark)

    Kravtsova, Victoria

    2014-01-01

    firms and the economy as a whole. The approach used in the current research accounts for different internal as well as external factors that individual firms face and evaluates the effect on changes in productivity, technology as well as the efficiency of domestic firms. The empirical analysis focuses...... change in different types of firms and sectors of the economy...

  19. Multiple external root resorption.

    Science.gov (United States)

    Yusof, W Z; Ghazali, M N

    1989-04-01

    Presented is an unusual case of multiple external root resorption. Although the cause of this resorption was not determined, several possibilities are presented. Trauma from occlusion, periodontal and pulpal inflammation, and resorption of idiopathic origin are all discussed as possible causes.

  20. Capacitance-voltage characteristics of GaAs ion-implanted structures

    Directory of Open Access Journals (Sweden)

    Privalov E. N.

    2008-08-01

    Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

  1. Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

    NARCIS (Netherlands)

    Mathijssen, Simon G. J.; Colle, Michael; Gomes, Henrique; Smits, Edsger C. P.; de Boer, Bert; McCulloch, Iain; Bobbert, Peter A.; de Leeuw, Dago M.; Cölle, Michael

    2007-01-01

    The electrical instability of organic field-effect transistors is investigated. We observe that the threshold-voltage shift (see figure) shows a stretched-exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors repor

  2. Cosmic Shear Bias and Calibration in Cosmic Shear Studies

    CERN Document Server

    Taylor, A N

    2016-01-01

    With the advent of large-scale weak lensing surveys there is a need to understand how realistic, scale-dependent systematics bias cosmic shear and dark energy measurements, and how they can be removed. Here we describe how spatial variations in the amplitude and orientation of realistic image distortions convolve with the measured shear field, mixing the even-parity convergence and odd-parity modes, and bias the shear power spectrum. Many of these biases can be removed by calibration to external data, the survey itself, or by modelling in simulations. The uncertainty in the calibration must be marginalised over and we calculate how this propagates into parameter estimation, degrading the dark energy Figure-of-Merit. We find that noise-like biases affect dark energy measurements the most, while spikes in the bias power have the least impact, reflecting their correlation with the effect of cosmological parameters. We argue that in order to remove systematic biases in cosmic shear surveys and maintain statistica...

  3. On the reliability of voltage and power as input parameters for the characterization of high power ultrasound applications

    Science.gov (United States)

    Haller, Julian; Wilkens, Volker

    2012-11-01

    For power levels up to 200 W and sonication times up to 60 s, the electrical power, the voltage and the electrical impedance (more exactly: the ratio of RMS voltage and RMS current) have been measured for a piezocomposite high intensity therapeutic ultrasound (HITU) transducer with integrated matching network, two piezoceramic HITU transducers with external matching networks and for a passive dummy 50 Ω load. The electrical power and the voltage were measured during high power application with an inline power meter and an RMS voltage meter, respectively, and the complex electrical impedance was indirectly measured with a current probe, a 100:1 voltage probe and a digital scope. The results clearly show that the input RMS voltage and the input RMS power change unequally during the application. Hence, the indication of only the electrical input power or only the voltage as the input parameter may not be sufficient for reliable characterizations of ultrasound transducers for high power applications in some cases.

  4. Electrode voltage fall and total voltage of a transient arc

    Science.gov (United States)

    Valensi, F.; Ratovoson, L.; Razafinimanana, M.; Masquère, M.; Freton, P.; Gleizes, A.

    2016-06-01

    This paper deals with an experimental study of the components of a transient arc total voltage with duration of a few tens of ms and a current peak close to 1000 A. The cathode tip is made of graphite whereas the flat anode is made either of copper or of graphite; the electrodes gap is a few mm. The analysis of the electrical parameters is supported and validated by fast imaging and by two models: the first one is a 2D physical model of the arc allowing to calculate both the plasma temperature field and the arc voltage; the second model is able to estimate the transient heating of the graphite electrode. The main aim of the study was to detect the possible change of the cathode voltage fall (CVF) during the first instants of the arc. Indeed it is expected that during the first ms the graphite cathode is rather cool and the main mechanism of the electron emission should be the field effect emission, whereas after several tens of ms the cathode is strongly heated and thermionic emission should be predominant. We have observed some change in the apparent CVF but we have shown that this apparent change can be attributed to the variation of the solid cathode resistance. On the other hand, the possible change of CVF corresponding to the transition between a ‘cold’ and a ‘hot’ cathode should be weak and could not be characterized considering our measurement uncertainty of about 2 V. The arc column voltage (ACV) was estimated by subtracting the electrode voltage fall from the total arc voltage. The experimental transient evolution of the ACV is in very good agreement with the theoretical variation predicted by the model, showing the good ability of the model to study this kind of transient arc.

  5. Manipulating the voltage dependence of tunneling spin torques

    KAUST Repository

    Manchon, Aurelien

    2012-10-01

    Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

  6. Implementation strategy for soft switching PFC with low output voltage

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    This paper proposes a novel implementation strategy for soft switching PFC whose circuit is simple and can achieve low voltage output directly. The main circuit adopts current mode full-bridge converter and all the power switches can realize ZCS or ZVS in the way of phase-shifted control, using the leakage inductance of the transformer, the junction capacitor of the switches and the stored energy of the output capacitor. The problems such as the function of phase-shifted link in control circuit, the implementation conditions of soft switching and bias restrained are analyzed. The adoption of constant frequency PWM control makes the design of the input and output filter link and the high frequency transformer simple. The transformation ratio regulation so as to achieve low voltage output and electrical insulation can be realized by using high frequency transformer.

  7. Unbalanced Voltage Compensation in Low Voltage Residential AC Grids

    DEFF Research Database (Denmark)

    Trintis, Ionut; Douglass, Philip; Munk-Nielsen, Stig

    2016-01-01

    This paper describes the design and test of a control algorithm for active front-end rectifiers that draw power from a residential AC grid to feed heat pump loads. The control algorithm is able to control the phase to neutral or phase to phase RMS voltages at the point of common coupling....... The voltage control was evaluated with either active or reactive independent phase load current control. The control performance in field operation in a residential grid situated in Bornholm, Denmark was investigated for different use cases....

  8. Current-voltage-temperature characteristics of DNA origami

    Energy Technology Data Exchange (ETDEWEB)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

    2009-04-29

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  9. VFT PHASE VOLTAGE MEASUREMENT IN THREE-PHASE ENCLOSED GIS

    Institute of Scientific and Technical Information of China (English)

    邹建华; 岳子丁; 李洋

    2002-01-01

    The measuring of VFT phase voltage in three-phase enclosed GIS is more complex and difficult than in single-phase ones. There are 3 capacitive sensors in the measuring system, the outputs of which are with a linear relation to the three phase voltages. This linear relation is presented with a factorial matrix. Because each capacitive sensor is coupled with the electric field of three phases (A, B, and C), the electric coupling coefficients are introduced. In order to determine the matrix of electric coupling coefficients, the numerical calculation method can be used. From the discussion on two types of three-phase enclosed GIS bus, i.e. standard arrangement and biased arrangement, the dominant electric coupling coefficients are named, which can be simply and approximately calculated by an analytic expression. Finally, as an example, the waveforms of VFT phase voltage generated on a three-phase enclosed GIS bus model are displayed. When a capacitive sensor is located at the 'shortest point' of phase A (or B, or C), the VFT phase voltage VA (or VB, or VC) can almost be measured by that capacitive sensor alone.

  10. Bias in clinical intervention research

    DEFF Research Database (Denmark)

    Gluud, Lise Lotte

    2006-01-01

    Research on bias in clinical trials may help identify some of the reasons why investigators sometimes reach the wrong conclusions about intervention effects. Several quality components for the assessment of bias control have been suggested, but although they seem intrinsically valid, empirical...

  11. Bias in the Mass Media.

    Science.gov (United States)

    Cirino, Robert

    Non-language elements of bias in mass media--such as images, sounds, tones of voices, inflection, and facial expressions--are invariably integrated with the choice of language. Further, they have an emotional impact that is often greater than that of language. It is essential that the teacher of English deal with this non-language bias since it is…

  12. Sequential biases in accumulating evidence

    Science.gov (United States)

    Huggins, Richard; Dogo, Samson Henry

    2015-01-01

    Whilst it is common in clinical trials to use the results of tests at one phase to decide whether to continue to the next phase and to subsequently design the next phase, we show that this can lead to biased results in evidence synthesis. Two new kinds of bias associated with accumulating evidence, termed ‘sequential decision bias’ and ‘sequential design bias’, are identified. Both kinds of bias are the result of making decisions on the usefulness of a new study, or its design, based on the previous studies. Sequential decision bias is determined by the correlation between the value of the current estimated effect and the probability of conducting an additional study. Sequential design bias arises from using the estimated value instead of the clinically relevant value of an effect in sample size calculations. We considered both the fixed‐effect and the random‐effects models of meta‐analysis and demonstrated analytically and by simulations that in both settings the problems due to sequential biases are apparent. According to our simulations, the sequential biases increase with increased heterogeneity. Minimisation of sequential biases arises as a new and important research area necessary for successful evidence‐based approaches to the development of science. © 2015 The Authors. Research Synthesis Methods Published by John Wiley & Sons Ltd. PMID:26626562

  13. Field-angle and DC-bias dependence of spin-torque diode in giant magnetoresistive microstripe

    Science.gov (United States)

    Li, X.; Zhou, Y.; Zheng, C.; Chan, P. H.; Chan, M.; Pong, Philip W. T.

    2016-11-01

    The spin torque diode effect in all metal spintronic devices has been proposed as a microwave detector with a high power limit and resistivity to breakdown. The previous works have revealed the field-angle dependence of the rectified DC voltage (VDC) in the ferromagnetic stripe. The giant magnetoresistive (GMR) microstripe exhibits higher sensitivity compared with the ferromagnetic stripe. However, the influence of the magnetic field direction and bias current in the spin rectification of GMR microstripe is not yet reported. In this work, the angular dependence and bias dependence of resonant frequency (fR) and VDC are investigated. A macrospin model concerning the contribution of magnetic field, shape anisotropy, and unidirectional anisotropy is engaged to interpret the experimental data. fR exhibits a |sin δH| dependence on the in-plane field angle (δH). VDC presents either |sin δH| or |sin2 δH cos δH | relation, depending on the magnitude of Hext. Optimized VDC of 24 μV is achieved under 4 mT magnetic field applied at δH = 170°. Under out-of-plane magnetic field, fR shows a cos 2θH reliance on the polar angle (θH), whereas VDC is sin θH dependent. The Oersted field of the DC bias current (IDC) modifies the effective field, resulting in shifted fR. Enhanced VDC with increasing IDC is attributed to the elevated contribution of spin-transfer torque. Maximum VDC of 35.2 μV is achieved, corresponding to 47% increase compared with the optimized value under zero bias. Higher IDC also results in enlarged damping parameter in the free layer, resulting in increased linewidth in the spin torque diode spectra. This work experimentally and analytically reveals the angular dependence of fR and VDC in the GMR microstripe. The results further demonstrate a highly tunable fR and optimized VDC by bias current without the external magnetic field. GMR microstripe holds promise for application as a high-power, frequency-tunable microwave detector that works under small

  14. Automated Voltage Control in LHCb

    CERN Document Server

    Granado Cardoso, L; Jacobsson, R

    2011-01-01

    LHCb is one of the 4 LHC experiments. In order to ensure the safety of the detector and to maximize efficiency, LHCb needs to coordinate its own operations, in particular the voltage configuration of the different subdetectors, according to the accelerator status. A control software has been developed for this purpose, based on the Finite State Machine toolkit and the SCADA system used for control throughout LHCb (and the other LHC experiments). This software permits to efficiently drive both the Low Voltage (LV) and High Voltage (HV) systems of the 10 different sub-detectors that constitute LHCb, setting each sub-system to the required voltage (easily configurable at run-time) based on the accelerator state. The control software is also responsible for monitoring the state of the Sub-detector voltages and adding it to the event data in the form of status-bits. Safe and yet flexible operation of the LHCb detector has been obtained and automatic actions, triggered by the state changes of the ...

  15. ExternE transport methodology for external cost evaluation of air pollution

    DEFF Research Database (Denmark)

    Jensen, S. S.; Berkowicz, R.; Brandt, J.

    The report describes how the human exposure estimates based on NERI's human exposure modelling system (AirGIS) can improve the Danish data used for exposure factors in the ExternE Transport methodology. Initially, a brief description of the ExternE Tranport methodology is given and it is summaris...

  16. The External Mind

    DEFF Research Database (Denmark)

    The External Mind: an Introduction by Riccardo Fusaroli, Claudio Paolucci pp. 3-31 The sign of the Hand: Symbolic Practices and the Extended Mind by Massimiliano Cappuccio, Michael Wheeler pp. 33-55 The Overextended Mind by Shaun Gallagher pp. 57-68 The "External Mind": Semiotics, Pragmatism......, Extended Mind and Distributed Cognition by Claudio Paolucci pp. 69-96 The Social Horizon of Embodied Language and Material Symbols by Riccardo Fusaroli pp. 97-123 Semiotics and Theories of Situated/Distributed Action and Cognition: a Dialogue and Many Intersections by Tommaso Granelli pp. 125-167 Building...... Action in Public Environments with Diverse Semiotic Resources by Charles Goodwin pp. 169-182 How Marking in Dance Constitutes Thinking with the Body by David Kirsh pp. 183-214 Ambiguous Coordination: Collaboration in Informal Science Education Research by Ivan Rosero, Robert Lecusay, Michael Cole pp. 215-240...

  17. External-Memory Multimaps

    CERN Document Server

    Angelino, Elaine; Mitzenmacher, Michael; Thaler, Justin

    2011-01-01

    Many data structures support dictionaries, also known as maps or associative arrays, which store and manage a set of key-value pairs. A \\emph{multimap} is generalization that allows multiple values to be associated with the same key. For example, the inverted file data structure that is used prevalently in the infrastructure supporting search engines is a type of multimap, where words are used as keys and document pointers are used as values. We study the multimap abstract data type and how it can be implemented efficiently online in external memory frameworks, with constant expected I/O performance. The key technique used to achieve our results is a combination of cuckoo hashing using buckets that hold multiple items with a multiqueue implementation to cope with varying numbers of values per key. Our external-memory results are for the standard two-level memory model.

  18. Large-Scale Galaxy Bias

    CERN Document Server

    Desjacques, Vincent; Schmidt, Fabian

    2016-01-01

    This review presents a comprehensive overview of galaxy bias, that is, the statistical relation between the distribution of galaxies and matter. We focus on large scales where cosmic density fields are quasi-linear. On these scales, the clustering of galaxies can be described by a perturbative bias expansion, and the complicated physics of galaxy formation is absorbed by a finite set of coefficients of the expansion, called bias parameters. The review begins with a pedagogical proof of this very important result, which forms the basis of the rigorous perturbative description of galaxy clustering, under the assumptions of General Relativity and Gaussian, adiabatic initial conditions. Key components of the bias expansion are all leading local gravitational observables, which includes the matter density but also tidal fields and their time derivatives. We hence expand the definition of local bias to encompass all these contributions. This derivation is followed by a presentation of the peak-background split in i...

  19. Publication bias in epidemiological studies.

    Science.gov (United States)

    Siddiqi, Nazish

    2011-06-01

    Communication of research findings is the utmost responsibility of all scientists. Publication bias occurs if scientific studies with negative or null results fail to get published. This can happen due to bias in submitting, reviewing, accepting, publishing or aggregating scientific literature that fails to show positive results on a particular topic. Publication bias can make scientific literature unrepresentative of the actual research studies. This can give the reader a false impression about the beneficial effects of a particular treatment or intervention and can influence clinical decision making. Publication bias is more common than it is actually considered to be, but there are ways to detect and prevent it. This paper comments on the occurrence, types and consequences of publication bias and the strategies employed to detect and control it.

  20. Structure design and driving voltage optimization of a novel giant magnetostrictive actuator

    Science.gov (United States)

    Xue, Guangming; Zhang, Peilin; He, Zhongbo; Li, Dongwei; Cai, Canwei

    2017-01-01

    Typical giant magnetostrictive actuator (GMA) cannot meet the requirement of driving a high-speed on-off valve for limitation in bias magnetic field exerted on giant magnetostrictive material. To solve this problem, a novel GMA is designed with zero bias magnetic field. Furthermore, to satisfy the requirement of the displacement direction, a “T” type transfer rod is joined to convert material’s elongating into actuator’s shortening. Simultaneously, long responding time of the actuator, especially the rising time of coil current, is also considered in this paper. The transient-state current is modeled based on the equivalent circuit considering parallel resistance of the coil, and from computed result, high opening voltage can be taken to promote responding speed of the actuator, and then an optimized driving voltage wave is presented. At last, with the help of an experimental system, the current model is verified and the driving effect of optimized voltage wave is tested and analyzed.

  1. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Arash Toudeshki; Norman Mariun; Hashim Hizam; Noor Izzri Abdul Wahab

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  2. Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

    OpenAIRE

    Okuma, Takanori; Yasuura, Hiroto

    2001-01-01

    This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

  3. Simple buck/boost voltage regulator

    Science.gov (United States)

    Paulkovich, J.; Rodriguez, G. E.

    1980-01-01

    Circuit corrects low or high supply voltage, produces regulated output voltage. Circuit has fewer components because inductory/transformer combination and pulse-width modulator serve double duty. Regulator handles input voltage variation from as low as one half output voltage to as high as input transistor rating. Solar arrays, fuel cells, and thermionic generators might use this regulator.

  4. 30 CFR 18.47 - Voltage limitation.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Voltage limitation. 18.47 Section 18.47 Mineral... § 18.47 Voltage limitation. (a) A tool or switch held in the operator's hand or supported against his... particular voltage(s) are provided in the design and construction of the equipment, its wiring,...

  5. Toward a comprehensive understanding of executive cognitive function in implicit racial bias.

    Science.gov (United States)

    Ito, Tiffany A; Friedman, Naomi P; Bartholow, Bruce D; Correll, Joshua; Loersch, Chris; Altamirano, Lee J; Miyake, Akira

    2015-02-01

    Although performance on laboratory-based implicit bias tasks often is interpreted strictly in terms of the strength of automatic associations, recent evidence suggests that such tasks are influenced by higher-order cognitive control processes, so-called executive functions (EFs). However, extant work in this area has been limited by failure to account for the unity and diversity of EFs, focus on only a single measure of bias and/or EF, and relatively small sample sizes. The current study sought to comprehensively model the relation between individual differences in EFs and the expression of racial bias in 3 commonly used laboratory measures. Participants (N = 485) completed a battery of EF tasks (Session 1) and 3 racial bias tasks (Session 2), along with numerous individual difference questionnaires. The main findings were as follows: (a) measures of implicit bias were only weakly intercorrelated; (b) EF and estimates of automatic processes both predicted implicit bias and also interacted, such that the relation between automatic processes and bias expression was reduced at higher levels of EF; (c) specific facets of EF were differentially associated with overall task performance and controlled processing estimates across different bias tasks; (d) EF did not moderate associations between implicit and explicit measures of bias; and (e) external, but not internal, motivation to control prejudice depended on EF to reduce bias expression. Findings are discussed in terms of the importance of global and specific EF abilities in determining expression of implicit racial bias.

  6. Toward a Comprehensive Understanding of Executive Cognitive Function in Implicit Racial Bias

    Science.gov (United States)

    Ito, Tiffany A.; Friedman, Naomi P.; Bartholow, Bruce D.; Correll, Joshua; Loersch, Chris; Altamirano, Lee J.; Miyake, Akira

    2014-01-01

    Although performance on laboratory-based implicit bias tasks often is interpreted strictly in terms of the strength of automatic associations, recent evidence suggests that such tasks are influenced by higher-order cognitive control processes, so-called executive functions (EFs). However, extant work in this area has been limited by failure to account for the unity and diversity of EFs, focus on only a single measure of bias and/or EF, and relatively small sample sizes. The current study sought to comprehensively model the relation between individual differences in EFs and the expression of racial bias in three commonly used laboratory measures. Participants (N=485) completed a battery of EF tasks (session 1) and three racial bias tasks (session 2), along with numerous individual difference questionnaires. The main findings were as follows: (1) measures of implicit bias were only weakly intercorrelated; (2) EF and estimates of automatic processes both predicted implicit bias and also interacted, such that the relation between automatic processes and bias expression was reduced at higher levels of EF; (3) specific facets of EF were differentially associated with overall task performance and controlled processing estimates across different bias tasks; (4) EF did not moderate associations between implicit and explicit measures of bias; and (5) external, but not internal, motivation to control prejudice depended on EF to reduce bias expression. Findings are discussed in terms of the importance of global and specific EF abilities in determining expression of implicit racial bias. PMID:25603372

  7. Voltage stability issues for a benchmark grid model including large scale wind power

    DEFF Research Database (Denmark)

    Eek, Jarle; Lund, Torsten; Di Marzio, Guiseppe

    2006-01-01

    The objective of the paper is to investigate how the voltage stability of a relatively weak network after a grid fault is affected by the connection of a large wind park. A theoretical discussion of the stationary and dynamic characteristics of the Short Circuit Induction Generator and the Doubly...... of the network and saturation of the external reactive power compensation units provides a good basis for evaluation of the voltage stability. For the DFIG it is concluded that the speed stability limit is mainly determined by the voltage limitation of the rotor converter...

  8. Cavity Voltage Phase Modulation MD

    CERN Document Server

    Mastoridis, Themistoklis; Molendijk, John; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The LHC RF/LLRF system is currently configured for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would exceed the peak klystron power and lead to saturation. A new scheme has therefore been proposed: for beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam will not be corrected (transient beam loading), but the strong RF feedback and One-Turn Delay feedback will still be active for loop and beam stability in physics. To achieve this, the voltage set point will be adapted for each bunch. The goal of this MD was to test a new algorithm that would adjust the voltage set point to achieve the cavity phase modulation that would minimize klystron forward power.

  9. Portable High Voltage Impulse Generator

    Directory of Open Access Journals (Sweden)

    S. Gómez

    2011-07-01

    Full Text Available This paper presents a portable high voltage impulse generator which was designed and built with insulation up to 20 kV. This design was based on previous work in which simulation software for standard waves was developed. Commercial components and low-cost components were used in this work; however, these particular elements are not generally used for high voltage applications. The impulse generators used in industry and laboratories are usually expensive; they are built to withstand extra high voltage and they are big, making them impossible to transport. The proposed generator is portable, thereby allowing tests to be made on devices that cannot be moved from their location. The results obtained with the proposed impulse generator were satisfactory in terms of time and waveforms compared to other commercial impulse generators and the standard impulse wave simulator.

  10. Study on Detection of Negative Corona Discharge Generated in Rod-Plane Air Gap by Using External Electrode Method

    Institute of Scientific and Technical Information of China (English)

    N.ICHIKAWA

    2007-01-01

    A detective method of a negative corona discharge by means of an external electrode is presented.The relationship between an area of the external electrode and a detected voltage waveform is examined experimentally.This experimental study is carried out with the use of a rod-plane air gap.The results obtained will be applicable to problems associated with silos,ducts,and high-voltage equipment.

  11. A low voltage CMOS low drop-out voltage regulator

    Science.gov (United States)

    Bakr, Salma Ali; Abbasi, Tanvir Ahmad; Abbasi, Mohammas Suhaib; Aldessouky, Mohamed Samir; Abbasi, Mohammad Usaid

    2009-05-01

    A low voltage implementation of a CMOS Low Drop-Out voltage regulator (LDO) is presented. The requirement of low voltage devices is crucial for portable devices that require extensive computations in a low power environment. The LDO is implemented in 90nm generic CMOS technology. It generates a fixed 0.8V from a 2.5V supply which on discharging goes to 1V. The buffer stage used is unity gain configured unbuffered OpAmp with rail-to-rail swing input stage. The simulation result shows that the implemented circuit provides load regulation of 0.004%/mA and line regulation of -11.09mV/V. The LDO provides full load transient response with a settling time of 5.2μs. Further, the dropout voltage is 200mV and the quiescent current through the pass transistor (Iload=0) is 20μA. The total power consumption of this LDO (excluding bandgap reference) is only 80μW.

  12. Implementation of Dynamic Voltage Restorer for Mitigation of Voltage Sag

    Directory of Open Access Journals (Sweden)

    K.Vinod Kumar

    2013-07-01

    Full Text Available Power quality is one of major concerns in the present. It has become important, especially with the introduction of sophisticated devices, whose performance is very sensitive to the quality of power supply. The dynamic voltage restorer (DVR is one of the modern devices used in distribution systems to improve the power quality. In this paper, emergency control in distribution systems is discussed by using the proposed multifunctional DVR control strategy.Also, themultiloop controller using the Posicast and P+Resonant controllers is proposed in order to improve the transient response and eliminate the steady state error in DVR response,respectively.The proposed process is applied to some riots in load voltage effected by induction motors starting, and a three-phase short circuit fault. The three-phase short circuits, and the large induction motors are suddenly started then voltage sags areoccurred.The innovation here is that by using the Multifunctional Dynamic Voltage Restorer, improve the power quality in distribution side. Simulation results show the capability of the DVR to control the emergency conditions of the distribution systems by using MATLAB/Simulink software.

  13. The high voltage homopolar generator

    Science.gov (United States)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  14. Resilient architecture design for voltage variation

    CERN Document Server

    Reddi, Vijay Janapa

    2013-01-01

    Shrinking feature size and diminishing supply voltage are making circuits sensitive to supply voltage fluctuations within the microprocessor, caused by normal workload activity changes. If left unattended, voltage fluctuations can lead to timing violations or even transistor lifetime issues that degrade processor robustness. Mechanisms that learn to tolerate, avoid, and eliminate voltage fluctuations based on program and microarchitectural events can help steer the processor clear of danger, thus enabling tighter voltage margins that improve performance or lower power consumption. We describe

  15. Administrative bias in South Africa

    Directory of Open Access Journals (Sweden)

    E S Nwauche

    2005-01-01

    Full Text Available This article reviews the interpretation of section 6(2(aii of the Promotion of Administrative Justice Act which makes an administrator “biased or reasonably suspected of bias” a ground of judicial review. In this regard, the paper reviews the determination of administrative bias in South Africa especially highlighting the concept of institutional bias. The paper notes that inspite of the formulation of the bias ground of review the test for administrative bias is the reasonable apprehension test laid down in the case of President of South Africa v South African Rugby Football Union(2 which on close examination is not the same thing. Accordingly the paper urges an alternative interpretation that is based on the reasonable suspicion test enunciated in BTR Industries South Africa (Pty Ltd v Metal and Allied Workers Union and R v Roberts. Within this context, the paper constructs a model for interpreting the bias ground of review that combines the reasonable suspicion test as interpreted in BTR Industries and R v Roberts, the possibility of the waiver of administrative bias, the curative mechanism of administrative appeal as well as some level of judicial review exemplified by the jurisprudence of article 6(1 of the European Convention of Human Rights, especially in the light of the contemplation of the South African Magistrate Court as a jurisdictional route of judicial review.

  16. Cognitive Bias in Systems Verification

    Science.gov (United States)

    Larson, Steve

    2012-01-01

    Working definition of cognitive bias: Patterns by which information is sought and interpreted that can lead to systematic errors in decisions. Cognitive bias is used in diverse fields: Economics, Politics, Intelligence, Marketing, to name a few. Attempts to ground cognitive science in physical characteristics of the cognitive apparatus exceed our knowledge. Studies based on correlations; strict cause and effect is difficult to pinpoint. Effects cited in the paper and discussed here have been replicated many times over, and appear sound. Many biases have been described, but it is still unclear whether they are all distinct. There may only be a handful of fundamental biases, which manifest in various ways. Bias can effect system verification in many ways . Overconfidence -> Questionable decisions to deploy. Availability -> Inability to conceive critical tests. Representativeness -> Overinterpretation of results. Positive Test Strategies -> Confirmation bias. Debiasing at individual level very difficult. The potential effect of bias on the verification process can be managed, but not eliminated. Worth considering at key points in the process.

  17. Cognitive Bias in Systems Verification

    Science.gov (United States)

    Larson, Steve

    2012-01-01

    Working definition of cognitive bias: Patterns by which information is sought and interpreted that can lead to systematic errors in decisions. Cognitive bias is used in diverse fields: Economics, Politics, Intelligence, Marketing, to name a few. Attempts to ground cognitive science in physical characteristics of the cognitive apparatus exceed our knowledge. Studies based on correlations; strict cause and effect is difficult to pinpoint. Effects cited in the paper and discussed here have been replicated many times over, and appear sound. Many biases have been described, but it is still unclear whether they are all distinct. There may only be a handful of fundamental biases, which manifest in various ways. Bias can effect system verification in many ways . Overconfidence -> Questionable decisions to deploy. Availability -> Inability to conceive critical tests. Representativeness -> Overinterpretation of results. Positive Test Strategies -> Confirmation bias. Debiasing at individual level very difficult. The potential effect of bias on the verification process can be managed, but not eliminated. Worth considering at key points in the process.

  18. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire

    Science.gov (United States)

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya

    2016-02-01

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin.

  19. Theoretical analysis of a biased photonic crystal fiber infiltrated with a negative dielectric anisotropy liquid crystal

    DEFF Research Database (Denmark)

    Weirich, Johannes; Wei, Lei; Lægsgaard, Jesper;

    2009-01-01

    We simulate the PBG mode of a biased Photonic Crystal Fiber (PCF) infiltrated with a Liquid Crystal (LC) with negative dielectric anisotropy. We analyse the voltage induced change of the transmission spectrum, dispersion and losses and compare them to the experimental values....

  20. Simplification of the Plasma Load of Negative-Pulse-Bias Source Used in Arc Ion Plating

    Institute of Scientific and Technical Information of China (English)

    Dong QI; Ninghui WANG; Guoqiang LIN; Zhenfeng DING

    2003-01-01

    Based on the voltage and current fluctuating phenomenon in the arc plasma load under the negative-pulse-bias, usingthe plasma physics theory and analysis of computer simulation expatiates that the nature of plasma load in vacuumarc plasma is a capacitance

  1. Application of Photocurrent Model on Polymer Solar Cells Under Forward Bias Stress

    DEFF Research Database (Denmark)

    Rizzo, Antonio; Torto, Lorenzo; Wrachien, Nicola

    2017-01-01

    We performed a constant current stress at forward bias on organic heterojunction solar cells. We measured current voltage curves in both dark and light at each stress step to calculate the photocurrent. An existing model applied to photocurrent experimental data allows the estimation of several...

  2. 脉冲偏压电弧离子镀Cr-O薄膜结构及光学性能研究∗%Structure and optical prop erty of Cr-O films dep osited by pulsed bias arc ion plating

    Institute of Scientific and Technical Information of China (English)

    刘海永; 张敏; 林国强; 韩克昌; 张林

    2015-01-01

    A series of uniform and transparent Cr-O films were synthesized on the silicon and quartz glass substrates at different bias voltages by pulsed bias arc ion plating. Effects of bias voltage on surface morphology, phase structure, composition, chemical valence states, hardness and optical property of the films were investigated by field emission scanning electron microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, nanoindentation and ultraviolet-visible spectrophotometer, respectively. Results indicate that the bias voltage can improve the quality of the films significantly and plays an important role in the film properties. Macroparticles and holes are observed on the surface of the films if without application of bias voltage, while the films prepared with bias voltage are uniform and smooth. The crystalline phase of the film is of amorphous structure if without bias voltage. While the bias voltage applies and increases from−100 V to−500 V, the Cr2O3 phase appears and changes into CrO phase. The crystal plane (104), (116) of the Cr2O3 phase and (200) of the Cr phase are observed in the film at the bias voltage of−100 V. When the bias voltage is above−200 V, the crystal planes (311) and (400) of the CrO phase can be observed. In order to further obtain the structure information, a detailed XPS study is performed. Chromium in the films shows different valence states, namely metallic Cr, Cr2+, Cr3+and Cr6+. Thereby, the main components of the polycrystalline films are Cr2O3 and CrO phases, meanwhile, and the films also contain a small amount of CrO3 and metal Cr phases. The films under different bias voltage show good mechanical properties and the hardness of all the films is above 19 GPa. With the increase of bias voltage the hardness first increases and then decreases, reaching a maximum value of 24.4 GPa at the bias voltage of−300 V. The films show good optical transmittance and its highest value can be up to 72%. As the

  3. Modulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method

    Science.gov (United States)

    Haug, Halvard; Olibet, Sara; Nordseth, Ørnulf; Stensrud Marstein, Erik

    2013-11-01

    In this paper, we study the surface passivation properties of thermally oxidized silicon wafers with controlled surface band bending, using a recently developed characterization technique combining calibrated photoluminescence imaging with the application of an external voltage over the rear side passivation layer. Various aspects of the technique and possible errors in the determination of the effective surface recombination velocity are discussed, including lateral carrier diffusion, leakage currents, and optical effects related to the presence of metal electrodes on the investigated samples. In order to quantitatively describe the recombination activity at the SiO2/c-Si interface and the effect of fixed charges in the oxide layer, the measured effective carrier lifetime vs. voltage curves have been analyzed in the framework of an extended Shockley-Read Hall recombination model. Furthermore, the results have been compared with corresponding results from microwave detected photoconductance decay measurements after depositing corona charges. We find an excellent agreement between the two techniques and between complementary measurements of the oxide charge density. Photoluminescence imaging under applied bias gives fast and repeatable measurements and allows for simultaneous data collection from multiple areas on the sample, and has thus been proven to be powerful tool for quantitative characterization of surface passivation layers.

  4. Analysis of the giant magnetostrictive actuator with strong bias magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Guangming, E-mail: yy0youxia@163.com; He, Zhongbo; Li, Dongwei; Yang, Zhaoshu; Zhao, Zhenglong

    2015-11-15

    Giant magnetostrictive actuator with strong bias magnetic field is designed to control the injector bullet valve opening and closing. The relationship between actuator displacement amplitude and input signal direction is analyzed. And based on the approximate linearity of strain-magnetic field, second-order system model of the actuator displacement is established. Experimental system suitable for the actuator is designed. The experimental results show that, the square voltage amplitude being 12 V, the actuator displacement amplitude is about 17 μm with backward direction signal input while being 1.5 μm under forward direction signal. From the results, the suitable input direction is confirmed to be backward. With exciting frequncy lower than 200 Hz, the error between the model and experimental result is less than 1.7 μm. So the model is validated under the low-frequency signal input. The testing displacement-voltage curves are approximately straight lines. But due to the biased position, the line slope and the displacement-voltage linearity change as the input voltage changes. - Highlights: • Giant magnetostrictive actuator with strong bias magnetic field is designed. • The relationship between actuator displacement amplitude and input current direction is analyzed. • The model of the actuator displacement is established and its accuracy is verified by the test. • The actuator displacement-voltage curves are achieved by the test, and the curves’ characteristics are analyzed theoretically.

  5. Biases from neutrino bias: to worry or not to worry?

    OpenAIRE

    Raccanelli, Alvise; Verde, Licia; Villaescusa-Navarro, Francisco

    2017-01-01

    The relation between the halo field and the matter fluctuations (halo bias), in the presence of massive neutrinos depends on the total neutrino mass, massive neutrinos introduce an additional scale-dependence of the bias which is usually neglected in cosmological analyses. We investigate the magnitude of the systematic effect on interesting cosmological parameters induced by neglecting this scale dependence, finding that while it is not a problem for current surveys, it is non-negligible for ...

  6. VOLTAGE REGULATORS OF SYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available Synchronous generators are the primary source of electrical power autonomous electrosupply systems, including backup systems. They are also used in a structure of rotating electricity converters and are widely used in renewable energy as part of wind power plants of small, mini and micro hydroelectric plants. Increasing the speed and the accuracy of the system of the voltage regulation of synchronous generators is possible due to the development of combined systems containing more stabilizers. The article illustrates the functional schemes of circuit voltage stabilizers and frequency synchronous generators (with electromagnetic excitation and permanent magnet excitation and describes the features of their work, including two and three-aggregate rotating converters of electricity used in uninterruptible power supply systems. To improve the technical characteristics of the system of stabilization we have proposed functional solutions for stabilizers of synchronous generators made on the base of direct frequency converters and using a transformer with a rotating magnetic field. To improve the reliability of and to improve the operational characteristics of the autonomous independent sources of electricity we suggest creating the main functional blocks and the elements of the stabilization system in a modular way. The functional circuit solutions of voltage regulators of synchronous generators and the characteristics of their work considered in the article, are able to improve the efficiency of pre-design work in the development of new technical solutions for stabilizing the voltage and the frequency in synchronous generators of electrosupply autonomous systems

  7. Frequency-controlled voltage regulator

    Science.gov (United States)

    Mclyman, W. T.

    1980-01-01

    Converting input ac to higher frequency reduce size and weight and makes possible unique kind of regulation. Since conversion frequency is above range of human hearing, supply generated on audible noise. It also exploits highfrequency conversion features to regulate its output voltage in novel way. Circuit is inherently short-circuit proof.

  8. Regularization by External Variables

    DEFF Research Database (Denmark)

    Bossolini, Elena; Edwards, R.; Glendinning, P. A.

    2016-01-01

    Regularization was a big topic at the 2016 CRM Intensive Research Program on Advances in Nonsmooth Dynamics. There are many open questions concerning well known kinds of regularization (e.g., by smoothing or hysteresis). Here, we propose a framework for an alternative and important kind of regula...... of regularization, by external variables that shadow either the state or the switch of the original system. The shadow systems are derived from and inspired by various applications in electronic control, predator-prey preference, time delay, and genetic regulation....

  9. A fiber optic hybrid multifunctional AC voltage sensor

    Energy Technology Data Exchange (ETDEWEB)

    Sokolovsky, A.; Zadvornov, S. [IRE, Moscow (Russian Federation); Ryabko, M. [UFD, Moscow (Russian Federation)

    2008-07-01

    Hybrid sensors have the advantages of both electronic and optical technologies. Their sensing element is based on conventional transducers and the optical fiber is used as a transmission media for the optical signal encoded with information between the local module and the remote module. The power supply for the remote module is usually provided by a built-in photoelectric converter illuminated by the optical radiation going through the same or another optical fiber. Electro-optic hybrid sensors have been widely used because of the electrical isolation provided by optical fiber. In the conventional fiber optic voltage sensor, piezoelectric or electro-optic transducers are implemented. Processing and conditioning measurement information is a complex task in these sensors. Moreover, the considerable drawback of most of these systems is that only one parameter, usually voltage value, is measured. This paper presented a novel fiber optic hybrid sensor for alternating current voltage measurements. This instrument provides the simultaneous measurement of four parameters, notably voltage value, frequency, phase angle and the external temperature. The paper described the measurement technology of the instrument including the remote module and optical powering as well as the unique modulation algorithm. The results and conclusions were also presented. 7 refs., 4 figs.

  10. Voltage-gated Proton Channels

    Science.gov (United States)

    DeCoursey, Thomas E.

    2014-01-01

    Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

  11. The construction of an electrode biasing system for driving plasma rotation in J-TEXT tokamak

    Science.gov (United States)

    Zhu, T. Z.; Chen, Z. P.; Sun, Yue; Nan, J. Y.; Liu, H.; Zhuang, G.; Wang, Z. J.

    2014-05-01

    A newly designed electrode biasing system has been constructed for driving plasma rotation in J-TEXT tokamak. To reduce the influence to the plasma, the system contains a pneumatic driving system so that it can reciprocate in a single discharge, with a stroke of about 5 cm in 100 ms. The power supply of the system can provide stable and adjustable dc voltage in the range of 0-700 V, with adjustable duration of 10-200 ms; its instantaneous power output can reach up to more than 200 kW. In addition, the power supply can also provide a multi-cycle voltage waveform, with adjustable pulse width and voltage amplitude. When applying a positive bias to the plasma, both an improvement of plasma confinement and the speed-up of plasma-edge toroidal rotation in the same direction of plasma current are observed in the experiments.

  12. Magnetic bearings with zero bias

    Science.gov (United States)

    Brown, Gerald V.; Grodsinsky, Carlos M.

    1991-01-01

    A magnetic bearing operating without a bias field has supported a shaft rotating at speeds up to 12,000 rpm with the usual four power supplies and with only two. A magnetic bearing is commonly operated with a bias current equal to half of the maximum current allowable in its coils. This linearizes the relation between net force and control current and improves the force slewing rate and hence the band width. The steady bias current dissipates power, even when no force is required from the bearing. The power wasted is equal to two-thirds of the power at maximum force output. Examined here is the zero bias idea. The advantages and disadvantages are noted.

  13. MLE's bias pathology motivates MCMLE

    OpenAIRE

    Yatracos, Yannis G.

    2013-01-01

    Maximum likelihood estimates are often biased. It is shown that this pathology is inherent to the traditional ML estimation method for two or more parameters, thus motivating from a different angle the use of MCMLE.

  14. Cognitive biases and language universals

    CERN Document Server

    Baronchelli, Andrea; Puglisi, Andrea

    2013-01-01

    Language universals have been longly attributed to an innate Universal Grammar. An alternative explanation states that linguistic universals emerged independently in every language in response to shared cognitive, though non language-specific, biases. A computational model has recently shown how this could be the case, focusing on the paradigmatic example of the universal properties of color naming patterns, and producing results in accurate agreement with the experimental data. Here we investigate thoroughly the role of a cognitive bias in the framework of this model. We study how, and to what extent, the structure of the bias can influence the corresponding linguistic universal patterns. We show also that the cultural history of a group of speakers introduces population-specific constraints that act against the uniforming pressure of the cognitive bias, and we clarify the interplay between these two forces. We believe that our simulations can help to shed light on the possible mechanisms at work in the evol...

  15. Minimum Bias Trigger in ATLAS

    CERN Document Server

    Kwee, R E; The ATLAS collaboration

    2010-01-01

    Since the restart of the LHC in November 2009, ATLAS has collected inelastic pp-collisions to perform first measurements on charged particle densities. These measurements will help to constrain various models describing phenomenologically soft parton interactions. Understanding the trigger efficiencies for different event types are therefore crucial to minimize any possible bias in the event selection. ATLAS uses two main minimum bias triggers, featuring complementary detector components and trigger levels. While a hardware based first trigger level situated in the forward regions with 2.09 < |eta| < 3.8 has been proven to select pp-collisions very efficiently, the Inner Detector based minimum bias trigger uses a random seed on filled bunches and central tracking detectors for the event selection. Both triggers were essential for the analysis of kinematic spectra of charged particles. Their performance and trigger efficiency measurements as well as studies on possible bias sources will be presen...

  16. Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

    Directory of Open Access Journals (Sweden)

    P. Pipinys

    2010-01-01

    Full Text Available Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy are also explicable in the framework of the PhAT model.

  17. DC-bias Cancellation for Phase Shift Controlled Dual Active Bridge

    DEFF Research Database (Denmark)

    Alzola, Rafael Pena; Mathe, Laszlo; Liserre, Marco;

    2013-01-01

    The dual active bridge topology allows bidirectional power flow and galvanic isolation for DC/DC energy conversion. These features have made it the possible backbone of the future smart transformer for distribution. The different voltage drops and commutation dead-times of the semiconductor...... switches result in DC-voltage at the transformer terminals. Even small DCvoltage components produce large DC-bias currents as they are only limited by the transformer resistances. The DC-bias degrades the transformer performance by increasing the losses. If the core saturates the resulting current pulses...... can damage the converter. A typical approach to avoid the DC-bias is placing a capacitor in series with the transformer. This capacitor suffers large current variations, reducing its reliability, and complicates the control. The dual active bridge usually handles the power flow by modifying the phase...

  18. Effect of a Biased Probe on the Afterglow Operation of an ECR4 Ion Source

    CERN Document Server

    Hill, C E; Wenander, F; Wolf, B H

    2000-01-01

    Various experiments have been performed on a 14.5 GHz ECR4 in order to improve the ion yield. The source runs in pulsed afterglow mode, and provides currents ~120 emA of Pb27+ to the CERN Heavy Ion Facility on an operational basis. In the search for higher beam intensities, the effects of a pulsed biased disk on axis at the injection side were investigated with different pulse timing and voltage settings. No proof for absolute higher intensities was seen for any of these modifications. However, the yield from a poorly tuned/low-performing source could be improved and the extracted pulse was less noisy with bias voltage applied. The fast response on the bias implies that increases/decreases are not due to ionisation processes. A good tune for high yield of high charge states during the afterglow coincides with a high plasma potential.

  19. Deaf Individuals Show a Leftward Bias in Numerical Bisection.

    Science.gov (United States)

    Cattaneo, Zaira; Cecchetto, Carlo; Papagno, Costanza

    2016-01-01

    Consistent evidence suggests that deaf individuals conceive of numerical magnitude as a left-to-right-oriented mental number line, as typically observed in hearing individuals. When accessing this spatial representation of numbers, normally hearing individuals typically show an attentional bias to the left (pseudoneglect), resembling the attentional bias they show in physical space. Deaf individuals do not show pseudoneglect in representing external space, as assessed by a visual line bisection task. However, whether deaf individuals show attentional biases in representing numerical space has never been investigated before. Here we instructed groups of deaf and hearing individuals to quickly estimate (without calculating) the midpoint of a series of numerical intervals presented in ascending and descending order. Both hearing and deaf individuals were significantly biased toward lower numbers (i.e., the leftward side of the mental number line) in their estimations. Nonetheless, the underestimation bias was smaller in deaf individuals than in the hearing when bisecting pairs of numbers given in descending order. This result may depend on the use of different strategies by deaf and hearing participants or a less pronounced lateralization of deaf individuals in the control of spatial attention.

  20. A developmental neuroscience perspective on affect-biased attention

    Directory of Open Access Journals (Sweden)

    Santiago Morales

    2016-10-01

    Full Text Available There is growing interest regarding the impact of affect-biased attention on psychopathology. However, most of the research to date lacks a developmental approach. In the present review, we examine the role affect-biased attention plays in shaping socioemotional trajectories within a developmental neuroscience framework. We propose that affect-biased attention, particularly if stable and entrenched, acts as a developmental tether that helps sustain early socioemotional and behavioral profiles over time, placing some individuals on maladaptive developmental trajectories. Although most of the evidence is found in the anxiety literature, we suggest that these relations may operate across multiple domains of interest, including positive affect, externalizing behaviors, drug use, and eating behaviors. We also review the general mechanisms and neural correlates of affect-biased attention, as well as the current evidence for the co-development of attention and affect. Based on the reviewed literature, we propose a model that may help us better understand the nuances of affect-biased attention across development. The model may serve as a strong foundation for ongoing attempts to identify neurocognitive mechanisms and intervene with individuals at risk. Finally, we discuss open issues for future research that may help bridge existing gaps in the literature.

  1. Preferences, country bias, and international trade

    NARCIS (Netherlands)

    S. Roy (Santanu); J.M.A. Viaene (Jean-Marie)

    1998-01-01

    textabstractAnalyzes international trade where consumer preferences exhibit country bias. Why country biases arise; How trade can occur in the presence of country bias; Implication for the pattern of trade and specialization.

  2. Preferences, country bias, and international trade

    NARCIS (Netherlands)

    S. Roy (Santanu); J.M.A. Viaene (Jean-Marie)

    1998-01-01

    textabstractAnalyzes international trade where consumer preferences exhibit country bias. Why country biases arise; How trade can occur in the presence of country bias; Implication for the pattern of trade and specialization.

  3. The Coefficient of the Voltage Induced Frequency Shift Measurement on a Quartz Tuning Fork

    Directory of Open Access Journals (Sweden)

    Yubin Hou

    2014-11-01

    Full Text Available We have measured the coefficient of the voltage induced frequency shift (VIFS of a 32.768 KHz quartz tuning fork. Three vibration modes were studied: one prong oscillating, two prongs oscillating in the same direction, and two prongs oscillating in opposite directions. They all showed a parabolic dependence of the eigen-frequency shift on the bias voltage applied across the fork, due to the voltage-induced internal stress, which varies as the fork oscillates. The average coefficient of the VIFS effect is as low as several hundred nano-Hz per millivolt, implying that fast-response voltage-controlled oscillators and phase-locked loops with nano-Hz resolution can be built.

  4. Spin-torque diode radio-frequency detector with voltage tuned resonance

    Energy Technology Data Exchange (ETDEWEB)

    Skowroński, Witold, E-mail: skowron@agh.edu.pl; Frankowski, Marek; Stobiecki, Tomasz [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Wrona, Jerzy [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Singulus Technologies, Kahl am Main 63796 (Germany); Ogrodnik, Piotr [Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland); AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Barnaś, Józef [Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland); Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań (Poland)

    2014-08-18

    We report on a voltage-tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.

  5. Effects of dielectric charging on the output voltage of a capacitive accelerometer

    Science.gov (United States)

    Qu, Hao; Yu, Huijun; Zhou, Wu; Peng, Bei; Peng, Peng; He, Xiaoping

    2016-11-01

    Output voltage drifting observed in one typical capacitive microelectromechanical system (MEMS) accelerometer is discussed in this paper. Dielectric charging effect is located as one of the major determinants of this phenomenon through a combination of experimental and theoretical studies. A theoretical model for the electromechanical effects of the dielectric surface charges within the electrode gap is established to analyze the dielectric charge effect on the output voltage. Observations of output voltage drift against time are fitted to this model in order to estimate the possible dielectric layer thickness. Meanwhile, Auger electron spectroscopy is carried out to analyze the electrode surface material composition and confirms a mixture layer of dielectric SiO2 and Si with a thickness about 5 nm, which is very close to the model estimation. In addition, observation of time-varing output drift in the variable bias voltage experiment indicates the movement of dielectric charge can be controlled by the applied electric field.

  6. Low-bias negative differential conductance controlled by electrode separation

    Science.gov (United States)

    Yi, Xiao-Hua; Liu, Ran; Bi, Jun-Jie; Jiao, Yang; Wang, Chuan-Kui; Li, Zong-Liang

    2016-12-01

    The electronic transport properties of a single thiolated arylethynylene molecule with 9,10-dihydroanthracene core, denoted as TADHA, is studied by using non-equilibrium Green’s function formalism combined with ab initio calculations. The numerical results show that the TADHA molecule exhibits excellent negative differential conductance (NDC) behavior at lower bias regime as probed experimentally. The NDC behavior of TADHA molecule originates from the Stark effect of the applied bias voltage, by which the highest occupied molecular orbital (HOMO) and the HOMO-1 are pulled apart and become localized. The NDC behavior of TADHA molecular system is tunable by changing the electrode distance. Shortening the electrode separation can enhance the NDC effect which is attributed to the possible increase of coupling between the two branches of TADHA molecule. Project supported by the National Natural Science Foundation of China (Grant Nos. 11374195 and 11405098) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2013FM006).

  7. Modulation instability of quasi-plane-wave optical beams in biased photorefractive- photovoltaic crystals

    Institute of Scientific and Technical Information of China (English)

    Lu Ke-Qing; Zhao Wei; Yang Yan-Long; Zhu Xiang-Ping; Li Jin-Ping; Zhang Yan-Peng

    2004-01-01

    We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals when the external bias field is absent.

  8. The North Atlantic Cold Bias

    Science.gov (United States)

    Greatbatch, Richard; Drews, Annika; Ding, Hui; Latif, Mojib; Park, Wonsun

    2016-04-01

    The North Atlantic cold bias, associated with a too zonal path of the North Atlantic Current and a missing "northwest corner", is a common problem in coupled climate and forecast models. The bias affects the North Atlantic and European climate mean state, variability and predictability. We investigate the use of a flow field correction to adjust the path of the North Atlantic Current as well as additional corrections to the surface heat and freshwater fluxes. Results using the Kiel Climate Model show that the flow field correction allows a northward flow into the northwest corner, largely eliminating the bias below the surface layer. A surface cold bias remains but can be eliminated by additionally correcting the surface freshwater flux, without adjusting the surface heat flux seen by the ocean model. A model version in which only the surface fluxes of heat and freshwater are corrected continues to exhibit the incorrect path of the North Atlantic Current and a strong subsurface bias. Removing the bias impacts the multi-decadal time scale variability in the model and leads to a better representation of the SST pattern associated with the Atlantic Multidecadal Variability than the uncorrected model.

  9. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Energy Technology Data Exchange (ETDEWEB)

    Baszczyk, M., E-mail: baszczyk@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Dorosz, P.; Glab, S.; Kucewicz, W. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Mik, L. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); State Higher Vocational School, Tarnow (Poland); Sapor, M. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland)

    2016-07-11

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  10. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Science.gov (United States)

    Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

    2016-07-01

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  11. The estimation method of GPS instrumental biases

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A model of estimating the global positioning system (GPS) instrumental biases and the methods to calculate the relative instrumental biases of satellite and receiver are presented. The calculated results of GPS instrumental biases, the relative instrumental biases of satellite and receiver, and total electron content (TEC) are also shown. Finally, the stability of GPS instrumental biases as well as that of satellite and receiver instrumental biases are evaluated, indicating that they are very stable during a period of two months and a half.

  12. Electronically Tunable High Input Impedance Voltage-Mode Multifunction Filter

    Science.gov (United States)

    Chen, Hua-Pin; Yang, Wan-Shing

    A novel electronically tunable high input impedance voltage-mode multifunction filter with single inputs and three outputs employing two single-output-operational transconductance amplifiers, one differential difference current conveyor and two capacitors is proposed. The presented filter can be realized the highpass, bandpass and lowpass functions, simultaneously. The input of the filter exhibits high input impedance so that the synthesized filter can be cascaded without additional buffers. The circuit needs no any external resistors and employs two grounded capacitors, which is suitable for integrated circuit implementation.

  13. Harmonic Analysis of Currents and Voltages Obtained in the Result of Computational Experiment

    Directory of Open Access Journals (Sweden)

    I. V. Novash

    2011-01-01

    Full Text Available The paper considers a methodology for execution of a harmonic analysis of current and voltage numerical values obtained in the result of a computational experiment and saved in an external data file. The harmonic analysis has been carried out in the Mathcad mathematical packet environment.

  14. External Measures of Cognition

    Directory of Open Access Journals (Sweden)

    Osvaldo eCairo

    2011-10-01

    Full Text Available The human brain is undoubtedly the most impressive, complex and intricate organ that has evolved over time. It is also probably the least understood, and for that reason, the one that is currently attracting the most attention. In fact, the number of comparative analyses that focus on the evolution of brain size in Homo sapiens and other species has increased dramatically in recent years. In neuroscience, no other issue has generated so much interest and been the topic of so many heated debates as the difference in brain size between socially defined population groups, both its connotations and implications. For over a century, external measures of cognition have been related to intelligence. However, it is still unclear whether these measures actually correspond to cognitive abilities. In summary, this paper must be reviewed with this premise in mind.

  15. Laser ablation of titanium in liquid in external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Serkov, A.A. [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); The Federal State Educational Institution of Higher Professional Education, “Moscow Institute of Physics and Technology (State University)”, 9 Institutskiy per., 141700, Dolgoprudny, Moscow Region (Russian Federation); Barmina, E.V., E-mail: barminaev@gmail.com [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); Shafeev, G.A. [Wave Research Center of A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31, Kashirskoye Highway, 115409 Moscow (Russian Federation); Voronov, V.V. [A.M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38, Vavilov Street, 119991 Moscow (Russian Federation)

    2015-09-01

    Highlights: • Ablation of a bulk Ti target by 10 ps laser pulses in liquid is experimentally studied in external DC electric field. • Applied cathodic bias leads to increase in average size of self-organized nanostructures formed upon ablation of titanium target. • Laser ablation of Ti target in external electric field results in generation of elongated titanium oxide nanoparticles. - Abstract: Ablation of a bulk Ti target by 10 ps laser pulses in water is experimentally studied in external DC electric field. It is demonstrated that both lateral size of nanostructures (NS) on Ti surface and their density depend on the electric field applied to the target. Scanning Electron Microscopy of NS reveals the shift of their size distribution function toward larger sizes with applied field (cathodic bias, 25 V DC). Density of mushroom-like NS with applied electric field amounts to 10{sup 10} cm{sup −2}. X-ray diffraction of generated nanoparticles (NPs) shows difference in the crystallographic structure of NPs of non-stoichiometric Ti oxides generated with and without electric field. This conclusion is corroborated with the optical absorption spectroscopy of obtained colloids. Transmission Electron Microscopy of NPs also shows difference in morphology of particles produced with and without cathodic bias. The results are interpreted on the basis of instability of the melt on Ti surface in the electric field.

  16. Over-voltage protection system and method

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Song; Dong, Dong; Lai, Rixin

    2017-05-02

    An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diode indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.

  17. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  18. External meeting: Geneva University

    CERN Multimedia

    2006-01-01

    Université de Genève Ecole de physique 24 quai Ernest Ansermet 1211 Genève 4 Tél : + 41 22 379 63 83 (secrétariat) Tél : + 41 22 379 62 56 (réception) Fax: + 41 22 379 69 22 Lundi 20 novembre 2006 COLLOQUIUM 17:00 - Auditoire Stückelberg Electrical correlation measurements in quantum nano-structures Dr. Stefan Oberholzer / Basel University Measuring the current-voltage characteristics of small conductors is widely used to characterize their electronic transport properties. In addition to such time-averaged measurements, correlation measurements between temporal fluctuations (noise) around the time-averaged mean current provide us with very important supplementary information about electrical transport. In this talk, I review our experimental work on shot noise, noise which originates from the granularity of charge and the diffraction of the electronic wave-function, and especially address the fundamental relation between electronic scattering experiments and the statistical properties of indist...

  19. A influência do número de barras na resistência à compressão axial dos fixadores externos monoplanares em modelos de tíbias de poliuretano The influence of the number of bars on the axial compressive strength of uniplanar external fixators in polyurethane tibia models

    Directory of Open Access Journals (Sweden)

    Márcio Hiroaki Kume

    2010-02-01

    Full Text Available OBJETIVO: Analisar a resistência (rigidez do sistema de fixação externa tubular uniplanar, com hastes de conexão única e dupla, com traços de fraturas estáveis e instáveis. MÉTODOS: Foram utilizados 48 modelos semelhantes à tíbia. Em todos foi deixado um intervalo de 0,5 cm entre os fragmentos e realizados cortes com angulações de 15º e 45º para simular fraturas estáveis e instáveis, respectivamente. Os modelos foram divididos em quatro grupos de acordo com o traço fraturário (15º e 45º e o número de barras metálicas na montagem (1 e 2 barras. Os modelos de prova foram adaptados à uma máquina de testes Instron®, pelas suas extremidades, e submetidos à compressão axial até que os fragmentos tiveram contato total. Avaliou-se a força necessária para efetuar o completo contato dos fragmentos do modelo. RESULTADOS: As forças instabilizadoras na montagem do fixador com barra dupla foram bastante superiores às com barra única. Observou-se ainda que o grupo com barra única instável apresentou variabilidade muito menor que os demais grupos, ou seja, apresenta resultados mais homogêneos, além de ter apresentado a menor média. CONCLUSÃO: A montagem do fixador externo com uma haste longitudinal dupla nos modelos estudados é mais estável que as demais quando submetidas à uma força de compressão axial.OBJECTIVE: This is an experimental study with the objective of analyses the increase of rigidity in synthetic tibia bones with external fixators, with single and double connecting rods and with stable and unstable fracture patterns. METHODS: The external fixators were used in the monoplanar, half pin configuration submitted to an axial compression load using the connecting bar in different patterns. Forty-eight similar models to the human tibia had been used. In all the models were left an interval of 0,5 cm between the fragments and were made cuts of 15º and 45º to simulate stable and unstable fracture patterns

  20. Advances in high voltage engineering

    CERN Document Server

    Haddad, A

    2005-01-01

    This book addresses the very latest research and development issues in high voltage technology and is intended as a reference source for researchers and students in the field, specifically covering developments throughout the past decade. This unique blend of expert authors and comprehensive subject coverage means that this book is ideally suited as a reference source for engineers and academics in the field for years to come.

  1. High Voltage Pulse Testing Survey.

    Science.gov (United States)

    1985-10-01

    Cryogenic 23 E. Liquids 26 F. Solids 28 1. Polyethylene 28 2. Cross-Linked Polyethylene ( XLPE ) 29 3. Polyimide and Polyvenylchloride (PVC) 31 VI Benefits 35 A...Strength of XLPE Cables 29 vii * 4" I PROGRAM OBJECTIVES The Pulse Test Survey summarizes government, industry, and technical reports on high voltage pulse...system of silicone oil on a XLPE (cross-linked polyethylene) spacer tends to lower the impulse breakdown by approximately 10 percent. The negative impulse

  2. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  3. Communication: Impact of inertia on biased Brownian transport in confined geometries

    Science.gov (United States)

    Martens, S.; Sokolov, I. M.; Schimansky-Geier, L.

    2012-03-01

    We consider the impact of inertia on biased Brownian motion of point-size particles in a two-dimensional channel with sinusoidally varying width. If the time scales of the problem separate, the adiabatic elimination of the transverse degrees of freedom leads to an effective description for the motion along the channel given by the potential of mean force. The possibility of such description is intimately connected with equipartition. Numerical simulations show that in the presence of external bias the equipartition may break down leading to non-monotonic dependence of mobility on external force and several other interesting effects.

  4. Bright-Dark Vector Screening-Photovoltaic Spatial Solitons in Biased Photorefractive-Photovoltaic Crystals

    Institute of Scientific and Technical Information of China (English)

    卢克清; 钱士雄; 窦春升; 吴振森

    2002-01-01

    We show that the vector beam evolution equations in properly oriented biased photorefractive-photovoltaic crystals can exhibit bright-dark vector solitons, which result from both the bulk photovoltaic effect and the spatially non-uniform screening of the external bias field. By adjusting the polarization of the incident beam to obtain the appropriate ratio of two orthogonal components, these vector solitons can be established. When the bulk photovoltaic effect is negligible, these vector solitons are bright-dark vector screening solitons. When the external field is absent, these vector solitons predict bright-dark vector photovoltaic solitons.

  5. Voltage Recovery of Dynamic Slip Control Wind Turbines with a STATCOM

    DEFF Research Database (Denmark)

    Chen, Zhe; Blaabjerg, Frede; Hu, Y.

    2005-01-01

    operating condition quickly for power system stability. This paper studies the voltage recovery of a dynamic slip and turbine pitch controlled wind turbine. A simulation model of a dynamic slip controlled wind turbine in PSCAD/EMTDC is presented, and the control schemes are described. The function......The fast development of wind power generation presents new requirements for the wind turbines integrated into the network. After the clearance of an external short-circuit fault, the voltage at the generator terminal needs to be re-established and the wind turbine should restore its normal...... of a STATCOM in re-establishing the system voltage after the clearance of an external short-circuit fault and restoring the normal operation of the wind turbine has been investigated....

  6. Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

    Science.gov (United States)

    Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

    2014-04-24

    A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements.

  7. Bias stress effect and recovery in organic field effect transistors: proton migration mechanism

    Science.gov (United States)

    Sharma, A.; Mathijssen, Simon G. J.; Kemerink, M.; de Leeuw, Dago M.; Bobbert, Peter A.

    2010-08-01

    Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric. We propose a mechanism in which holes in the semiconductor are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric to explain the instabilities in organic transistors. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we explain in detail the recovery of a pres-stressed transistor on applying zero gate bias. We show that recovery dynamics depends strongly on the extent of stressing. Our mechanism is consistent with the known aspects of bias-stress effect like acceleration due to humidity, constant activation energy and reversibility.

  8. Low voltage electron beam accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Ochi, Masafumi [Iwasaki Electric Co., Ltd., Tokyo (Japan)

    2003-02-01

    Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

  9. Key Elements of a Low Voltage, Ultracompact Plasma Spectrometer

    Science.gov (United States)

    Scime, E. E.; Barrie, A.; Dugas, M.; Elliott, D.; Ellison, S.; Keesee, A. M.; Pollock, C. J.; Rager, A.; Tersteeg, J.

    2016-01-01

    Taking advantage of technological developments in wafer-scale processing over the past two decades, such as deep etching, 3-D chip stacking, and double-sided lithography, we have designed and fabricated the key elements of an ultracompact 1.5cm (exp 3)plasma spectrometer that requires only low-voltage power supplies, has no microchannel plates, and has a high aperture area to instrument volume ratio. The initial design of the instrument targets the measurement of charged particles in the 3-20keV range with a highly directional field of view and a 100 duty cycle; i.e., the entire energy range Is continuously measured. In addition to reducing mass, size, and voltage requirements, the new design will affect the manufacturing process of plasma spectrometers, enabling large quantities of identical instruments to be manufactured at low individual unit cost. Such a plasma spectrometer is ideal for heliophysics plasma investigations, particularly for small satellite and multispacecraft missions. Two key elements of the instrument have been fabricated: the collimator and the energy analyzer. An initial collimator transparency of 20 with 3deg x 3deg angular resolution was achieved. The targeted 40 collimator transparency appears readily achievable. The targeted energy analyzer scaling factor of 1875 was achieved; i.e.20 keV electrons were selected for only a 10.7V bias voltage in the energy analyzer.

  10. Electrically controlled exchange bias for spintronic applications

    Science.gov (United States)

    He, Xi; Polisetty, Srinivas; Binek, Christian

    2006-03-01

    Electrically controlled exchange bias (EB) is proposed for novel spintronic applications [1]. Basic effects of electrically controlled EB and its magnetoelectric (ME) switching are studied in a Cr2O3(111)/(Co/Pt)3 heterostructure. Exchange coupling between the ME antiferromagnet Cr2O3 and a ferromagnetic CoPt multilayer exhibits perpendicular EB. The latter is controlled by applied axial electric fields inducing excess magnetization at the interface. The enhancement of this hitherto weak tuning effect is explored when replacing ME bulk pinning systems by epitaxal thin films. Recently, the sign of the EB field has been tuned via field cooling the system in either parallel or antiparallel axial magnetic and electric fields [2].Here, the crossover from bulk to thin film ME pinning systems is studied and spintronic applications are suggested based on the electrically controlled EB. Pure voltage control of magnetic configurations of tunneling magnetoresistance spin valves is proposed as an alternative to current-induced magnetization switching. In addition we suggest an XOR operation realized in a MEally pinned giant magneto resistance structure. [1] Ch. Binek, B.Doudin, J. Phys. Condens. Matter 17, L39 (2005). [2] P. Borisov et al., Phys. Rev. Lett. 94, 117203 (2005).

  11. Piezo Voltage Controlled Planar Hall Effect Devices

    OpenAIRE

    Bao Zhang; Kang-Kang Meng; Mei-Yin Yang; Edmonds, K. W.; Hao Zhang; Kai-Ming Cai; Yu Sheng; Nan Zhang; Yang Ji; Jian-Hua Zhao; Hou-Zhi Zheng; Kai-You Wang

    2015-01-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the pie...

  12. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  13. Examining Event-Related Potential (ERP correlates of decision bias in recognition memory judgments.

    Directory of Open Access Journals (Sweden)

    Holger Hill

    Full Text Available Memory judgments can be based on accurate memory information or on decision bias (the tendency to report that an event is part of episodic memory when one is in fact unsure. Event related potentials (ERP correlates are important research tools for elucidating the dynamics underlying memory judgments but so far have been established only for investigations of accurate old/new discrimination. To identify the ERP correlates of bias, and observe how these interact with ERP correlates of memory, we conducted three experiments that manipulated decision bias within participants via instructions during recognition memory tests while their ERPs were recorded. In Experiment 1, the bias manipulation was performed between blocks of trials (automatized bias and compared to trial-by-trial shifts of bias in accord with an external cue (flexibly controlled bias. In Experiment 2, the bias manipulation was performed at two different levels of accurate old/new discrimination as the memory strength of old (studied items was varied. In Experiment 3, the bias manipulation was added to another, bottom-up driven manipulation of bias induced via familiarity. In the first two Experiments, and in the low familiarity condition of Experiment 3, we found evidence of an early frontocentral ERP component at 320 ms poststimulus (the FN320 that was sensitive to the manipulation of bias via instruction, with more negative amplitudes indexing more liberal bias. By contrast, later during the trial (500-700 ms poststimulus, bias effects interacted with old/new effects across all three experiments. Results suggest that the decision criterion is typically activated early during recognition memory trials, and is integrated with retrieved memory signals and task-specific processing demands later during the trial. More generally, the findings demonstrate how ERPs can help to specify the dynamics of recognition memory processes under top-down and bottom-up controlled retrieval conditions.

  14. Examining Event-Related Potential (ERP) Correlates of Decision Bias in Recognition Memory Judgments

    Science.gov (United States)

    Hill, Holger; Windmann, Sabine

    2014-01-01

    Memory judgments can be based on accurate memory information or on decision bias (the tendency to report that an event is part of episodic memory when one is in fact unsure). Event related potentials (ERP) correlates are important research tools for elucidating the dynamics underlying memory judgments but so far have been established only for investigations of accurate old/new discrimination. To identify the ERP correlates of bias, and observe how these interact with ERP correlates of memory, we conducted three experiments that manipulated decision bias within participants via instructions during recognition memory tests while their ERPs were recorded. In Experiment 1, the bias manipulation was performed between blocks of trials (automatized bias) and compared to trial-by-trial shifts of bias in accord with an external cue (flexibly controlled bias). In Experiment 2, the bias manipulation was performed at two different levels of accurate old/new discrimination as the memory strength of old (studied) items was varied. In Experiment 3, the bias manipulation was added to another, bottom-up driven manipulation of bias induced via familiarity. In the first two Experiments, and in the low familiarity condition of Experiment 3, we found evidence of an early frontocentral ERP component at 320 ms poststimulus (the FN320) that was sensitive to the manipulation of bias via instruction, with more negative amplitudes indexing more liberal bias. By contrast, later during the trial (500–700 ms poststimulus), bias effects interacted with old/new effects across all three experiments. Results suggest that the decision criterion is typically activated early during recognition memory trials, and is integrated with retrieved memory signals and task-specific processing demands later during the trial. More generally, the findings demonstrate how ERPs can help to specify the dynamics of recognition memory processes under top-down and bottom-up controlled retrieval conditions. PMID

  15. CMS Preshower (ES) : proposal for Protective Earthing of the subdetector and of its Silicon bias supply system

    CERN Document Server

    Wertelaers, P

    2010-01-01

    There are no good arguments to apply for a derogatory "IT" (Isolé/Terre) earthing scheme for the Preshower, and thus, an appropriate earthing of on-detector active parts is discussed. Complication comes from the absence of a strong DC link between the modules' grounds and the structure, and the safety tying must be obstructed. Fortunately, the bias system is the only Low Voltage supplying system, the other powering is Extra-Low Voltage. The bias supplies have a (very) limited maximum current, and the proposed obstructed tying can even deal with the most extreme type of insulation fault. (Initial electrical safety clearance was based upon elements from this Note.)

  16. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  17. 49 CFR 234.221 - Lamp voltage.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Lamp voltage. 234.221 Section 234.221 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION..., Inspection, and Testing Maintenance Standards § 234.221 Lamp voltage. The voltage at each lamp shall...

  18. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  19. Gender bias in academic recruitment

    DEFF Research Database (Denmark)

    Abramo, Giovanni; D’Angelo, Ciriaco Andrea; Rosati, Francesco

    2016-01-01

    It is well known that women are underrepresented in the academic systems of many countries. Gender discrimination is one of the factors that could contribute to this phenomenon. This study considers a recent national academic recruitment campaign in Italy, examining whether women are subject...... to more or less bias than men. The findings show that no gender-related differences occur among the candidates who benefit from positive bias, while among those candidates affected by negative bias, the incidence of women is lower than that of men. Among the factors that determine success in a competition...... for an academic position, the number of the applicant’s career years in the same university as the committee members assumes greater weight for male candidates than for females. Being of the same gender as the committee president is also a factor that assumes greater weight for male applicants. On the other hand...

  20. Anchoring Bias in Online Voting

    CERN Document Server

    Yang, Zimo; Zhou, Tao

    2012-01-01

    Voting online with explicit ratings could largely reflect people's preferences and objects' qualities, but ratings are always irrational, because they may be affected by many unpredictable factors like mood, weather, as well as other people's votes. By analyzing two real systems, this paper reveals a systematic bias embedding in the individual decision-making processes, namely people tend to give a low rating after a low rating, as well as a high rating following a high rating. This so-called \\emph{anchoring bias} is validated via extensive comparisons with null models, and numerically speaking, the extent of bias decays with interval voting number in a logarithmic form. Our findings could be applied in the design of recommender systems and considered as important complementary materials to previous knowledge about anchoring effects on financial trades, performance judgements, auctions, and so on.