Mechanical Properties of Organic Semiconductors for Stretchable, Highly Flexible, and Mechanically Robust Electronics.

Science.gov (United States)

Root, Samuel E; Savagatrup, Suchol; Printz, Adam D; Rodriquez, Daniel; Lipomi, Darren J

2017-05-10

Mechanical deformability underpins many of the advantages of organic semiconductors. The mechanical properties of these materials are, however, diverse, and the molecular characteristics that permit charge transport can render the materials stiff and brittle. This review is a comprehensive description of the molecular and morphological parameters that govern the mechanical properties of organic semiconductors. Particular attention is paid to ways in which mechanical deformability and electronic performance can coexist. The review begins with a discussion of flexible and stretchable devices of all types, and in particular the unique characteristics of organic semiconductors. It then discusses the mechanical properties most relevant to deformable devices. In particular, it describes how low modulus, good adhesion, and absolute extensibility prior to fracture enable robust performance, along with mechanical "imperceptibility" if worn on the skin. A description of techniques of metrology precedes a discussion of the mechanical properties of three classes of organic semiconductors: π-conjugated polymers, small molecules, and composites. The discussion of each class of materials focuses on molecular structure and how this structure (and postdeposition processing) influences the solid-state packing structure and thus the mechanical properties. The review concludes with applications of organic semiconductor devices in which every component is intrinsically stretchable or highly flexible.

Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Tallarida, M.

2005-05-15

This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

Infrared magneto-optical properties of (III, Mn)V ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Sinova, J.; Jungwirth, Tomáš; Kučera, Jan; MacDonald, A. H.

2003-01-01

Roč. 67, č. 23 (2003), s. 235203-1 - 235203-11 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-optical properties ac-Hall conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

Emergent properties resulting from type-II band alignment in semiconductor nanoheterostructures.

Science.gov (United States)

Lo, Shun S; Mirkovic, Tihana; Chuang, Chi-Hung; Burda, Clemens; Scholes, Gregory D

2011-01-11

The development of elegant synthetic methodologies for the preparation of monocomponent nanocrystalline particles has opened many possibilities for the preparation of heterostructured semiconductor nanostructures. Each of the integrated nanodomains is characterized by its individual physical properties, surface chemistry, and morphology, yet, these multicomponent hybrid particles present ideal systems for the investigation of the synergetic properties that arise from the material combination in a non-additive fashion. Of particular interest are type-II heterostructures, where the relative band alignment of their constituent semiconductor materials promotes a spatial separation of the electron and hole following photoexcitation, a highly desirable property for photovoltaic applications. This article highlights recent progress in both synthetic strategies, which allow for material and architectural modulation of novel nanoheterostructures, as well as the experimental work that provides insight into the photophysical properties of type-II heterostructures. The effects of external factors, such as electric fields, temperature, and solvent are explored in conjunction with exciton and multiexciton dynamics and charge transfer processes typical for type-II semiconductor heterostructures.

FDTD simulations of near-field mediated semiconductor molecular optical properties

Energy Technology Data Exchange (ETDEWEB)

Zhang, Dai; Sakrow, Marcus; Mihaljevic, Josip; Meixner, Alfred J. [Institute of Physical and Theoretical Chemistry, University Tuebingen, Auf der Morgenstelle 8, Tuebingen (Germany)

2010-07-01

The optical properties of molecules can be dramatically altered when they are in a close proximity of an excited metal antenna. In order to get insight into how the antenna generated near-field influences the optical properties of low quantum yield molecules, we carried out FDTD simulations of a sharp laser-illuminated Au tip approaching to a semiconductor thin film. The time-averaged field distribution between the semiconductor thin film and the tip antenna is calculated regarding to different distances. Our calculation demonstrates that the coupling between the localized plasmon at the tip apex and semiconductor polariton can be achieved building up a distance-dependent high field enhancement. Our experimental results show that such a high field strength enhances not only the excitation process by a factor of 104, but alters the radiative: non-radiative decay rate giving approx. 15 times stronger photoluminescence emission.

Optical properties of hybrid semiconductor-metal structures

Energy Technology Data Exchange (ETDEWEB)

Kreilkamp, L.E.; Pohl, M.; Akimov, I.A.; Yakovlev, D.R.; Bayer, M. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Belotelov, V.I.; Zvezdin, A.K. [A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, 119992 Moscow (Russian Federation); Karczewski, G.; Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences, 02668 Warsaw (Poland); Rudzinski, A.; Kahl, M. [Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund (Germany)

2012-07-01

We study the optical properties of hybrid nanostructures comprising a semiconductor CdTe quantum well (QW) separated by a thin CdMgTe cap layer of 40 nm from a patterned gold film. The CdTe/CdMgTe QW structure with a well width of 10nm was grown by molecular beam epitaxy. The one-dimensional periodic gold films on top were made using e-beam lithography and lift-off process. The investigated structures can be considered as plasmonic crystals because the metal films attached to the semiconductor are patterned with a period in the range from 475 to 600 nm, which is comparable to the surface plasmon-polariton (SPP) wavelength. Angle dependent reflection spectra at room temperature clearly show plasmonic resonances. PL spectra taken at low temperatures of about 10 K under below- and above-barrier illumination show significant modifications compared to the unstructured QW sample. The number of emission lines and their position shift change depending on the excitation energy. The role of exciton-SPP coupling and Schottky barrier at the semiconductor-metal interface are discussed.

Electronic properties and phase transitions in low-dimensional semiconductors

International Nuclear Information System (INIS)

Panich, A M

2008-01-01

We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX 2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, nonlinear effects in their I-V characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, relaxor behavior and potential applications for optoelectronic devices. We review the crystal structure of TlX and TlMX 2 compounds, their transport properties under ambient conditions, experimental and theoretical studies of the electronic structure, transport properties and semiconductor-metal phase transitions under high pressure, and sequences of temperature-induced structural phase transitions with intermediate incommensurate states. The electronic nature of the ferroelectric phase transitions in the above-mentioned compounds, as well as relaxor behavior, nanodomains and possible occurrence of quantum dots in doped and irradiated crystals is discussed. (topical review)

Electronic and optical properties of diamond/organic semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Gajewski, Wojciech; Garrido, Jose; Niedermeier, Martin; Stutzmann, Martin [Walter Schottky Institute, TU Muenchen, Am Coulombwall 3, 85748 Garching (Germany); Williams, Oliver; Haenen, Ken [Institute for Materials Research, University of Hasselt, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

2007-07-01

Different diamond substrates (single crystalline: SCD, poly-crystalline: PCD and nano-crystalline: NCD) were used to investigate the electronic and optical properties of the diamond/organic semiconductor heterostructures. Layers of a poly[ethynyl-(2-decyloxy-5methoxy)benzene] - PEB, pentacene and 4-nitro-biphenyl-4-diazonium cations - Ph-Ph-NO{sub 2} were prepared by spin coating, thermal evaporation and grafting, respectively. The measurements of the electronic transport along the organic layer were performed using a Hg probe as well as Hall effect measurements in the temperature range 70-400 K. The I-V characteristics of the B-doped diamond/organic semiconductor heterostructures were measured at room temperature by means of the Hg probe. Undoped IIa and undoped PCD films were used for a study of the optical and optoelectronic properties of prepared heterostructures. The influence of the organic layer homogeneity and layer thickness on the optical properties will be discussed. Furthermore, preliminary data on perpendicular and parallel transport in the heterostructures layer will be reported.

Noise properties of semiconductor waveguides with alternating sections of saturable gain and absorption

DEFF Research Database (Denmark)

Öhman, Filip; Bischoff, Svend; Tromborg, Bjarne

We investigate the dynamical noise properties of saturable semiconductor devices for optical signal processing. A trade-off between noise redistribution and extinction ratio improvement has to be made for all-optical regeneration.......We investigate the dynamical noise properties of saturable semiconductor devices for optical signal processing. A trade-off between noise redistribution and extinction ratio improvement has to be made for all-optical regeneration....

Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application

Directory of Open Access Journals (Sweden)

Lili Yang

2017-11-01

Full Text Available Since the initial discovery of surface-enhanced Raman scattering (SERS in the 1970s, it has exhibited a huge potential application in many fields due to its outstanding advantages. Since the ultra-sensitive noble metallic nanostructures have increasingly exposed themselves as having some problems during application, semiconductors have been gradually exploited as one of the critical SERS substrate materials due to their distinctive advantages when compared with noble metals. ZnO is one of the most representative metallic oxide semiconductors with an abundant reserve, various and cost-effective fabrication techniques, as well as special physical and chemical properties. Thanks to the varied morphologies, size-dependent exciton, good chemical stability, a tunable band gap, carrier concentration, and stoichiometry, ZnO nanostructures have the potential to be exploited as SERS substrates. Moreover, other distinctive properties possessed by ZnO such as biocompatibility, photocatcalysis and self-cleaning, and gas- and chemo-sensitivity can be synergistically integrated and exerted with SERS activity to realize the multifunctional potential of ZnO substrates. In this review, we discuss the inevitable development trend of exploiting the potential semiconductor ZnO as a SERS substrate. After clarifying the root cause of the great disparity between the enhancement factor (EF of noble metals and that of ZnO nanostructures, two specific methods are put forward to improve the SERS activity of ZnO, namely: elemental doping and combination of ZnO with noble metals. Then, we introduce a distinctive advantage of ZnO as SERS substrate and illustrate the necessity of reporting a meaningful average EF. We also summarize some fabrication methods for ZnO nanostructures with varied dimensions (0–3 dimensions. Finally, we present an overview of ZnO nanostructures for the versatile SERS application.

Microscopic properties of ionic liquid/organic semiconductor interfaces revealed by molecular dynamics simulations.

Science.gov (United States)

Yokota, Yasuyuki; Miyamoto, Hiroo; Imanishi, Akihito; Takeya, Jun; Inagaki, Kouji; Morikawa, Yoshitada; Fukui, Ken-Ichi

2018-05-09

Electric double-layer transistors based on ionic liquid/organic semiconductor interfaces have been extensively studied during the past decade because of their high carrier densities at low operation voltages. Microscopic structures and the dynamics of ionic liquids likely determine the device performance; however, knowledge of these is limited by a lack of appropriate experimental tools. In this study, we investigated ionic liquid/organic semiconductor interfaces using molecular dynamics to reveal the microscopic properties of ionic liquids. The organic semiconductors include pentacene, rubrene, fullerene, and 7,7,8,8-tetracyanoquinodimethane (TCNQ). While ionic liquids close to the substrate always form the specific layered structures, the surface properties of organic semiconductors drastically alter the ionic dynamics. Ionic liquids at the fullerene interface behave as a two-dimensional ionic crystal because of the energy gain derived from the favorable electrostatic interaction on the corrugated periodic substrate.

Microscopical Studies of Structural and Electronic Properties of Semiconductors

CERN Multimedia

2002-01-01

The electronic and structural properties of point defects in semiconductors, e.g. radiation defects, impurities or passivating defects can excellently be studied by the hyperfine technique of Perturbed Angular Correlation (PAC). The serious limitation of this method, the small number of chemically different radioactive PAC probe atoms can be widely overcome by means of ISOLDE. Providing shortliving isotopes, which represent common dopants as well as suitable PAC probe atoms, the ISOLDE facility enables a much broader application of PAC to problems in semiconductor physics.\\\\ Using the probe atom $^{111m}$ Cd , the whole class of III-V compounds becomes accessible for PAC investigations. First successful experiments in GaAs, InP and GaP have been performed, concerning impurity complex formation and plasma induced defects. In Si and Ge, the electronic properties~-~especially their influence on acceptor-donor interaction~-~could be exemplarily st...

Fundamentals of semiconductor devices

CERN Document Server

Lindmayer, Joseph

1965-01-01

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

All-optical packet envelope detection using a slow semiconductor saturable absorber gate and a semiconductor optical amplifier

NARCIS (Netherlands)

Porzi, C.; Fresi, F.; Poti, L.; Bogoni, A.; Guina, M.; Orsila, L.; Okhotnikov, O.; Calabretta, N.

2008-01-01

Abstract—We propose a simple and effective scheme for alloptical packet envelope detection (AO-PED), exploiting a slow saturable absorber-based vertical cavity semiconductor gate and a semiconductor optical amplifier. A high extinction ratio of 15 dB was measured for the recovered envelope signal.

NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

International Nuclear Information System (INIS)

Reshak, A.H.; Khan, Saleem Ayaz; Kamarudin, H.; Bila, Jiri

2014-01-01

Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor

NaAuS chicken-wire-like semiconductor: Electronic structure and optical properties

Energy Technology Data Exchange (ETDEWEB)

Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Khan, Saleem Ayaz, E-mail: sayaz_usb@yahoo.com [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Kamarudin, H. [Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bila, Jiri [Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, 166 07 Prague 6 (Czech Republic)

2014-01-05

Highlights: • Chicken wire like semiconductor NaAuS was investigated. • Good agreement with experimental data was found. • Electronic charge density of chicken wire like semiconductor NaAuS was obtained. • The calculated uniaxial anisotropy is −0.0005, indicating the strong anisotropy. -- Abstract: The electronic structure, charge density and optical properties of NaAuS a chicken-wire-like semiconductor was calculated using full potential linear augmented plane wave based on density functional theory. The Ceperley-Alder local density approximation, Perdew Becke Ernzerhof Generalized gradient approximation and Engel Voskov Generalized Gradient Approximation were applied to solve the exchange correlation potential. The investigation of band structures and density of states elucidates that Engle Vasko Generalized Gradient Approximation shows close agreement to the experimental data. The calculated valence charge density shows pure ionic nature of Au–Au bond. It becomes partially covalent when Au is connected with two Na atoms. The linear optical susceptibilities of chicken-wire-like NaAuS semiconductor are calculated so as to obtain further insight into the electronic properties. The uniaxial anisotropy is −0.0005, indicating the strong anisotropy of the dielectric function in the NaAuS a chicken-wire-like semiconductor.

Physicochemical and Electrophysical Properties of Metal/Semiconductor Containing Nanostructured Composites

Science.gov (United States)

Gerasimov, G. N.; Gromov, V. F.; Trakhtenberg, L. I.

2018-06-01

The properties of nanostructured composites based on metal oxides and metal-polymer materials are analyzed, along with ways of preparing them. The effect the interaction between metal and semiconductor nanoparticles has on the conductivity, photoconductivity, catalytic activity, and magnetic, dielectric, and sensor properties of nanocomposites is discussed. It is shown that as a result of this interaction, a material can acquire properties that do not exist in systems of isolated particles. The transfer of electrons between metal particles of different sizes in polymeric matrices leads to specific dielectric losses, and to an increase in the rate and a change in the direction of chemical reactions catalyzed by these particles. The interaction between metal-oxide semiconductor particles results in the electronic and chemical sensitization of sensor effects in nanostructured composite materials. Studies on creating molecular machines (Brownian motors), devices for magnetic recording of information, and high-temperature superconductors based on nanostructured systems are reviewed.

Quantum theory of the optical and electronic properties of semiconductors

CERN Document Server

Haug, Hartmut

1990-01-01

The current technological revolution in the development of computing devices has created a demand for a textbook on the quantum theory of the electronic and optical properties of semiconductors and semiconductor devices. This book successfully fulfills this need. Based on lectures given by the authors, it is a comprehensive introduction for researchers or graduate-level students to the subject. Certain sections can also serve as a graduate-level textbook for use in solid state physics courses or for more specialized courses. The final chapters establish a direct link to current research in sem

Semiconductor devices for entangled photon pair generation: a review

Science.gov (United States)

Orieux, Adeline; Versteegh, Marijn A. M.; Jöns, Klaus D.; Ducci, Sara

2017-07-01

Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.

Photoelectrical properties of semiconductor tips in scanning tunneling microscopy

NARCIS (Netherlands)

Prins, M.W.J.; Jansen, R.; Groeneveld, R.H.M.; Gelder, Van A.P.; Kempen, van H.

1996-01-01

We describe a model as well as experiments on the electrical properties of a photoexcited tunnel junction between a metal and a semiconductor material, as is established in a scanning tunneling microscope. The model treats the case in which carrier transport is mediated by capture and relaxation in

Electric properties of organic and mineral electronic components, design and modelling of a photovoltaic chain for a better exploitation of the solar energy

International Nuclear Information System (INIS)

Aziz, A.

2006-11-01

The research carried out in this thesis relates to the mineral, organic electronic components and the photovoltaic systems. Concerning the mineral semiconductors, we modelled the conduction properties of the structures metal/oxide/semiconductor (MOS) strongly integrated in absence and in the presence of charges. We proposed a methodology allowing characterizing the ageing of structures MOS under injection of the Fowler Nordheim (FN) current type. Then, we studied the Schottky diodes in polymers of type metal/polymer/metal. We concluded that: The mechanism of the charges transfer, through the interface metal/polymer, is allotted to the thermo-ionic effect and could be affected by the lowering of the potential barrier to the interface metal/polymer. In the area of photovoltaic energy, we conceived and modelled a photovoltaic system of average power (100 W). We showed that the adaptation of the generator to the load allows a better exploitation of solar energy. This is carried out by the means of the converters controlled by an of type MPPT control provided with a detection circuit of dysfunction and restarting of the system. (author)

Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Sinova, J.; Wang, K. Y.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Foxon, C. T.; Niu, Q.; MacDonald, A. H.

2003-01-01

Roč. 83, č. 2 (2003), s. 320-322 ISSN 0003-6951 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * dc transport properties * (Ga, Mn)As Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.049, year: 2003

Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

CERN Multimedia

Wagner, F E

2002-01-01

Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

Semiconductor properties and protective role of passive films of iron base alloys

International Nuclear Information System (INIS)

Fujimoto, Shinji; Tsuchiya, Hiroaki

2007-01-01

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H 2 SO 4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other hand, the passive film of the Fe-18Cr alloy in the sulphuric acid consists of p-type oxide and n-type hydroxide layers. The behaviour of passive film growth and corrosion was discussed in terms of the electronic structure in the passive film

Network connectivity enhancement by exploiting all optical multicast in semiconductor ring laser

Science.gov (United States)

Siraj, M.; Memon, M. I.; Shoaib, M.; Alshebeili, S.

2015-03-01

The use of smart phone and tablet applications will provide the troops for executing, controlling and analyzing sophisticated operations with the commanders providing crucial documents directly to troops wherever and whenever needed. Wireless mesh networks (WMNs) is a cutting edge networking technology which is capable of supporting Joint Tactical radio System (JTRS).WMNs are capable of providing the much needed bandwidth for applications like hand held radios and communication for airborne and ground vehicles. Routing management tasks can be efficiently handled through WMNs through a central command control center. As the spectrum space is congested, cognitive radios are a much welcome technology that will provide much needed bandwidth. They can self-configure themselves, can adapt themselves to the user requirement, provide dynamic spectrum access for minimizing interference and also deliver optimal power output. Sometimes in the indoor environment, there are poor signal issues and reduced coverage. In this paper, a solution utilizing (CR WMNs) over optical network is presented by creating nanocells (PCs) inside the indoor environment. The phenomenon of four-wave mixing (FWM) is exploited to generate all-optical multicast using semiconductor ring laser (SRL). As a result same signal is transmitted at different wavelengths. Every PC is assigned a unique wavelength. By using CR technology in conjunction with PC will not only solve network coverage issue but will provide a good bandwidth to the secondary users.

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

Physical principles of semiconductor detectors

International Nuclear Information System (INIS)

Micek, S.L.

1979-01-01

The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

Science.gov (United States)

Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

2017-02-01

semiconductor NCs with LSPRs covering the entire spectral range, from the mid- to the NIR. We focus on copper chalcogenide NCs and impurity doped metal oxide NCs as the most investigated alternatives to noble metals. We shed light on the structural changes upon LSPR tuning in vacancy doped copper chalcogenide NCs and deliver a picture for the fundamentally different mechanism of LSPR modification of impurity doped metal oxide NCs. We review on the peculiar optical properties of plasmonic degenerately doped NCs by highlighting the variety of different optical measurements and optical modeling approaches. These findings are merged in an exhaustive section on new and exciting applications based on the special characteristics that plasmonic semiconductor NCs bring along.

Optical properties and quantum confinement of nanocrystalline II-IV semiconductor particles

NARCIS (Netherlands)

Dijken, Albert van

1999-01-01

In this thesis, experiments are described that were performed on suspensions of nanocrystalline II-IV semiconductor particles.The object of this research is to study quantum size effects in relation to the luminescence properties of these particles. A pre-requisite for performing studies of

Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

International Nuclear Information System (INIS)

Fritsche, J.

2003-01-01

In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

Manipulating semiconductor colloidal stability through doping.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

International Nuclear Information System (INIS)

Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2006-01-01

Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials

Hydrogenated dilute nitride semiconductors theory, properties, and applications

CERN Document Server

Ciatto, Gianluca

2015-01-01

""The electrical and optical properties of the technologically and scientifically important dilute nitride semiconductors are strongly influenced by the introduction of atomic hydrogen. This volume is an excellent summary and resource for the most recent understanding of experimental results and state-of-the-art theoretical studies of the formation, reversibility, and microscopic structure of nitrogen-hydrogen complexes in these materials. The book details how a wide variety of experimental techniques have provided a detailed understanding of the role of hydrogen. It is the premier sourc

Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

Science.gov (United States)

Martín-Sánchez, Javier; Trotta, Rinaldo; Mariscal, Antonio; Serna, Rosalía; Piredda, Giovanni; Stroj, Sandra; Edlinger, Johannes; Schimpf, Christian; Aberl, Johannes; Lettner, Thomas; Wildmann, Johannes; Huang, Huiying; Yuan, Xueyong; Ziss, Dorian; Stangl, Julian; Rastelli, Armando

2018-01-01

The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots (QDs) embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials’ emission properties such as their emission energy, fine-structure-splitting in self-assembled InAs QDs and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs QDs. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary QDs. Future research directions and prospects are discussed.

Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

International Nuclear Information System (INIS)

Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

1998-01-01

Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

International Nuclear Information System (INIS)

Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien; Deleporte, Emmanuelle; Audebert, Pierre; Galmiche, Laurent

2009-01-01

We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH 2 ) n NH 3 ) 2 PbX 4 . These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH 2 ) n NH 3 + ) to study the relationship between their structures and the optical properties of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH 2 ) n NH 3 ) 2 PbX 4 . A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

Science.gov (United States)

Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

2014-09-24

Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites

Directory of Open Access Journals (Sweden)

Beata Bajorowicz

2014-09-01

Full Text Available Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD, UV-Vis diffuse reflectance spectroscopy (DRS, scanning electron microscopy (SEM, Brunauer–Emmett–Teller (BET specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

Optoelectronic properties of transparent p-type semiconductor Cu{sub x}S thin films

Energy Technology Data Exchange (ETDEWEB)

Parreira, P.; Valente, J. [ICEMS, IST-UTL, Lisboa (Portugal); Lavareda, G. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); Nunes, F.T. [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); Amaral, A. [Departamento de Fisica, IST-UTL, Lisboa (Portugal); ICEMS, IST-UTL, Lisboa (Portugal); Carvalho, C.N. de [Departamento de Ciencia dos Materiais, FCT-UNL, Caparica (Portugal); ICEMS, IST-UTL, Lisboa (Portugal)

2010-07-15

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InO{sub x}, ITO, ZnO{sub x} or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu{sub 2}S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu{sub 2}S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work Cu{sub x}S thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our Cu{sub x}S thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Electric properties of organic and mineral electronic components, design and modelling of a photovoltaic chain for a better exploitation of the solar energy; Proprietes electriques des composants electroniques mineraux et organiques, conception et modelisation d'une chaine photovoltaique pour une meilleure exploitation de l'energie solaire

Energy Technology Data Exchange (ETDEWEB)

Aziz, A

2006-11-15

The research carried out in this thesis relates to the mineral, organic electronic components and the photovoltaic systems. Concerning the mineral semiconductors, we modelled the conduction properties of the structures metal/oxide/semiconductor (MOS) strongly integrated in absence and in the presence of charges. We proposed a methodology allowing characterizing the ageing of structures MOS under injection of the Fowler Nordheim (FN) current type. Then, we studied the Schottky diodes in polymers of type metal/polymer/metal. We concluded that: The mechanism of the charges transfer, through the interface metal/polymer, is allotted to the thermo-ionic effect and could be affected by the lowering of the potential barrier to the interface metal/polymer. In the area of photovoltaic energy, we conceived and modelled a photovoltaic system of average power (100 W). We showed that the adaptation of the generator to the load allows a better exploitation of solar energy. This is carried out by the means of the converters controlled by an of type MPPT control provided with a detection circuit of dysfunction and restarting of the system. (author)

Organic semiconductor crystals.

Science.gov (United States)

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Structural and elastic properties of AIBIIIC 2 VI semiconductors

Science.gov (United States)

Kumar, V.; Singh, Bhanu P.

2018-01-01

The plane wave pseudo-potential method within density functional theory has been used to calculate the structural and elastic properties of AIBIIIC 2 VI semiconductors. The electronic band structure, density of states, lattice constants (a and c), internal parameter (u), tetragonal distortion (η), energy gap (Eg), and bond lengths of the A-C (dAC) and B-C (dBC) bonds in AIBIIIC 2 VI semiconductors have been calculated. The values of elastic constants (Cij), bulk modulus (B), shear modulus (G), Young's modulus (Y), Poisson's ratio (υ), Zener anisotropy factor (A), Debye temperature (ϴD) and G/B ratio have also been calculated. The values of all 15 parameters of CuTlS2 and CuTlSe2 compounds, and 8 parameters of 20 compounds of AIBIIIC 2 VI family, except AgInS2 and AgInSe2, have been calculated for the first time. Reasonably good agreement has been obtained between the calculated, reported and available experimental values.

Redox properties of small semiconductor particles

International Nuclear Information System (INIS)

Liver, N.; Nitzan, A.

1992-01-01

The size dependence of electrical and thermodynamic quantities of intermediate-sized semiconductor particles in an electrolyte solution with a given redox pair are studied. The equilibrium constant for this system is then derived based on the relationship of the electrolytic redox components to the size, charges, and concentration of the semiconductor particles. 25 refs., 9 figs., 1 tab

Semiconductor Laser Measurements Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

Exploitation of Unique Properties of Zeolites in the Development of Gas Sensors

Directory of Open Access Journals (Sweden)

Prabir K. Dutta

2012-04-01

Full Text Available The unique properties of microporous zeolites, including ion-exchange properties, adsorption, molecular sieving, catalysis, conductivity have been exploited in improving the performance of gas sensors. Zeolites have been employed as physical and chemical filters to improve the sensitivity and selectivity of gas sensors. In addition, direct interaction of gas molecules with the extraframework cations in the nanoconfined space of zeolites has been explored as a basis for developing new impedance-type gas/vapor sensors. In this review, we summarize how these properties of zeolites have been used to develop new sensing paradigms. There is a considerable breadth of transduction processes that have been used for zeolite incorporated sensors, including frequency measurements, optical and the entire gamut of electrochemical measurements. It is clear from the published literature that zeolites provide a route to enhance sensor performance, and it is expected that commercial manifestation of some of the approaches discussed here will take place. The future of zeolite-based sensors will continue to exploit its unique properties and use of other microporous frameworks, including metal organic frameworks. Zeolite composites with electronic materials, including metals will lead to new paradigms in sensing. Use of nano-sized zeolite crystals and zeolite membranes will enhance sensor properties and make possible new routes of miniaturized sensors.

Investigation of porosity and fractal properties of the sintered metal and semiconductor layers in the MDS capacitor structure

Directory of Open Access Journals (Sweden)

Skatkov Leonid

2012-01-01

Full Text Available MDS capacitor (metal - dielectric - semiconductor is a structure in which metal plate is represented by compact bulk-porous pellets of niobium sintered powder, and semiconductor plate - by pyrolytic layer of MnO2. In the present paper we report the results of investigation of microporosity of sintered Nb and pyrolytic MnO2 and also the fractal properties of semiconductor layer.

A New Approach for Evaluating Charge Transport Properties of Semiconductor Detectors

International Nuclear Information System (INIS)

Kim, Kyung O; Kim, Jong Kyung; Kim, Soon Young; Ha, Jang Ho

2009-01-01

The semiconductor detectors (e.g., CdTe, CdZnTe, and HgI 2 ) have been widely used for radiation detection and medical imaging because of its various outstanding features such as excellent energy resolution, wide bandgap energy, room temperature operation, and so on. Unfortunately, the performance of these detectors is mainly limited by the charge transport properties of semiconductor, especially the mobility-lifetime products (i.e., (μτ) e and ((μτ) h ). Hence, the analysis on the mobility-lifetime products is very important for evaluating correct characteristics of semiconductor detectors. A commonly used method to analyze the mobilitylifetime products is based on their responses to α particle. However, the α particle method cannot evaluate the ((μτ)h product in many cases, because a semiconductor detector operating at positive bias voltages often yields the energy spectrum without the peaks. This method is also known to be very sensitive to the experimental conditions as well as surface conditions of the detector. In this study, a new approach with gamma-ray instead of α particle was carried out to solve the determination difficulty of the ((μτ) h product with common method. The special relation between the two mobility-lifetime products, which we call the 'Nural equation', was also developed to simply obtain each parameter based on Hecht equation

Synthesis and optical properties of novel organic-inorganic hybrid nanolayer structure semiconductors

Energy Technology Data Exchange (ETDEWEB)

Zhang Sanjun; Lanty, Gaetan; Lauret, Jean-Sebastien [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Deleporte, Emmanuelle, E-mail: Emmanuelle.Deleporte@lpqm.ens-cachan.fr [Laboratoire de Photonique Quantique et Moleculaire de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France); Audebert, Pierre; Galmiche, Laurent [Laboratoire de Photophysique et Photochimie Supramoleculaires et Macromoleculaires de l' Ecole Normale Superieure de Cachan, 61 avenue du President Wilson, 94235 Cachan (France)

2009-06-15

We report on the synthesis of some novel organic-inorganic hybrid 2D perovskite semiconductors (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. These semiconductors are self-assembled intercalation nanolayers and have a multi-quantum-well energy level structure. We systematically vary the characteristic of organic groups (R-(CH{sub 2}){sub n}NH{sub 3}{sup +}) to study the relationship between their structures and the optical properties of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. From optical absorption and photoluminescence spectroscopy experiments performed on series of samples, we find some trends of choosing the organic groups to improve the optical performance of (R-(CH{sub 2}){sub n}NH{sub 3}){sub 2}PbX{sub 4}. A new organic group, which allows synthesis of nanolayer perovskite semiconductors with quite high photoluminescence efficiency and better long-term stability, has been found.

Physics of semiconductor lasers

CERN Document Server

Mroziewicz, B; Nakwaski, W

2013-01-01

Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

Electric properties of organic and mineral electronic components, design and modelling of a photovoltaic chain for a better exploitation of the solar energy; Proprietes electriques des composants electroniques mineraux et organiques, conception et modelisation d'une chaine photovoltaique pour une meilleure exploitation de l'energie solaire

Energy Technology Data Exchange (ETDEWEB)

Aziz, A

2006-11-15

The research carried out in this thesis relates to the mineral, organic electronic components and the photovoltaic systems. Concerning the mineral semiconductors, we modelled the conduction properties of the structures metal/oxide/semiconductor (MOS) strongly integrated in absence and in the presence of charges. We proposed a methodology allowing characterizing the ageing of structures MOS under injection of the Fowler Nordheim (FN) current type. Then, we studied the Schottky diodes in polymers of type metal/polymer/metal. We concluded that: The mechanism of the charges transfer, through the interface metal/polymer, is allotted to the thermo-ionic effect and could be affected by the lowering of the potential barrier to the interface metal/polymer. In the area of photovoltaic energy, we conceived and modelled a photovoltaic system of average power (100 W). We showed that the adaptation of the generator to the load allows a better exploitation of solar energy. This is carried out by the means of the converters controlled by an of type MPPT control provided with a detection circuit of dysfunction and restarting of the system. (author)

Plasmon-induced carrier polarization in semiconductor nanocrystals

Science.gov (United States)

Yin, Penghui; Tan, Yi; Fang, Hanbing; Hegde, Manu; Radovanovic, Pavle V.

2018-06-01

Spintronics1 and valleytronics2 are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In2O3 nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes11 with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

Contacts to semiconductors

International Nuclear Information System (INIS)

Tove, P.A.

1975-08-01

Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

Porous and Nanoporous Semiconductors and Emerging Applications

Directory of Open Access Journals (Sweden)

Helmut Föll

2006-01-01

Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

Non-equilibrium carrier efect in the optical properties of semiconductors

International Nuclear Information System (INIS)

Teschke, O.

1980-01-01

The time-resolved reflectivity of picosecond pulses from optically excited carrier distributions can provide important information about the energy relaxation rates of hot electrons and holes in semiconductors. the basic optical properties of non-equilibrium carrier distributions of GaAs are discussed. A semi-empirical analysis of the reflectivity spectrum is presented and the contributions of different effects are estimated. The results are in qualitative agreement with recent experiments employing dye lasers. (Author) [pt

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Photocatalytic Hybrid Semiconductor-Metal Nanoparticles; from Synergistic Properties to Emerging Applications.

Science.gov (United States)

Waiskopf, Nir; Ben-Shahar, Yuval; Banin, Uri

2018-04-14

Hybrid semiconductor-metal nanoparticles (HNPs) manifest unique combined and often synergetic properties stemming from the materials combination. These structures exhibit spatial charge separation across the semiconductor-metal junction upon light absorption, enabling their use as photocatalysts. So far, the main impetus of photocatalysis research in HNPs addresses their functionality in solar fuel generation. Recently, it was discovered that HNPs are functional in efficient photocatalytic generation of reactive oxygen species (ROS). This has opened the path for their implementation in diverse biomedical and industrial applications where high spatially temporally resolved ROS formation is essential. Here, the latest studies on the synergistic characteristics of HNPs are summarized, including their optical, electrical, and chemical properties and their photocatalytic function in the field of solar fuel generation is briefly discussed. Recent studies are then focused concerning photocatalytic ROS formation with HNPs under aerobic conditions. The emergent applications of this capacity are then highlighted, including light-induced modulation of enzymatic activity, photodynamic therapy, antifouling, wound healing, and as novel photoinitiators for 3D-printing. The superb photophysical and photocatalytic properties of HNPs offer already clear advantages for their utility in scenarios requiring on-demand light-induced radical formation and the full potential of HNPs in this context is yet to be revealed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Device Physics of Narrow Gap Semiconductors

CERN Document Server

Chu, Junhao

2010-01-01

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Doping Properties of Ferromagnetic Semiconductors Investigated by the Hyperfine Interaction of Implanted Radioisotopes

CERN Multimedia

2002-01-01

One of the most promising prospective applications of semiconductors will be in the field of spinelectronics. Thereby polarized spins must be injected into semiconductor structures. Ferromagnetic semiconductors (FMS) have a potential for such applications because of the coexistence of semiconducting and ferromagnetic properties. A special group of such FMS are the chromium chalcogenides of type AB$_{2}$C$_{4}$ with B = Cr. They crystallise in the structure of normal spinel. In this Proposal the application of the perturbed angular correlation technique (= PAC) for the investigation of nuclear probes in these substances is described. The radioactive probes will be implanted at the ISOLDE separator. We will start these investigations with the substances CdCr$_{2}$Se$_{4}$, CdCr$_{2}$S$_{4}$, HgCr$_{2}$Se$_{4}$, CuCr$_{2}$Se$_{4}$ and CuCr$_{2}$S$_{4}$ which are ferromagnetic with Curie temperatures between 84.5 and 460 K. In addition to the popular $^{111}$In($^{111}$Cd), which we get from other facilities, we ...

Properties of Semiconductors: Synthesis of Oriented ZnO for Photoelectrochemistry and Photoremediation

Science.gov (United States)

Koenig, Emma; Jacobs, Ari; Lisensky, George

2017-01-01

Semiconductors are an important class of materials; preparing ZnO nanorods allows semiconducting properties to be easily observed. The week before lab, groups of four students take 15 min to setup two fluorine-doped tin oxide glass (FTO) slides in a zinc nitrate and hexamethylenetetramine solution stored at 90°C until the next lab. Hexagonal ZnO…

Thermoelectric properties of semiconductor nanowire networks

Science.gov (United States)

Roslyak, Oleksiy; Piryatinski, Andrei

2016-03-01

To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

Thienoacene-based organic semiconductors.

Science.gov (United States)

Takimiya, Kazuo; Shinamura, Shoji; Osaka, Itaru; Miyazaki, Eigo

2011-10-11

Thienoacenes consist of fused thiophene rings in a ladder-type molecular structure and have been intensively studied as potential organic semiconductors for organic field-effect transistors (OFETs) in the last decade. They are reviewed here. Despite their simple and similar molecular structures, the hitherto reported properties of thienoacene-based OFETs are rather diverse. This Review focuses on four classes of thienoacenes, which are classified in terms of their chemical structures, and elucidates the molecular electronic structure of each class. The packing structures of thienoacenes and the thus-estimated solid-state electronic structures are correlated to their carrier transport properties in OFET devices. With this perspective of the molecular structures of thienoacenes and their carrier transport properties in OFET devices, the structure-property relationships in thienoacene-based organic semiconductors are discussed. The discussion provides insight into new molecular design strategies for the development of superior organic semiconductors. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thiophene-Based Organic Semiconductors.

Science.gov (United States)

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-10-24

Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

Handbook of luminescent semiconductor materials

CERN Document Server

Bergman, Leah

2011-01-01

Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

Science.gov (United States)

Lau, Wayne Heung

This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

Development of microwave amplifier based on gallium nitride semiconductor structures

International Nuclear Information System (INIS)

Pavlov, D.Yi.; Prokopenko, O.V.; Tsvyirko, Yu.A.; Pavlov, Yi.L.

2014-01-01

Microwave properties of microwave amplifier based on gallium nitride (GN) semiconductor structures has been calculated numerically. We proposed the method of numerical calculation of device. This method is accurately sets the value of its characteristics depending on the elements that are used in design of amplifier. It is shown that the device based on GN HEMT-transistors could have amplification factor about 50 dB, while its sizes are 27x18x5.5 mm 3 . Also was provided the absolute stability an amplifier in the whole operating frequency range. It is quite important when using this type of amplifiers in different conditions of exploitation and various fields of use the radioelectronic equipment

EXPLOITATION OF GRANITE BOULDER

Directory of Open Access Journals (Sweden)

Ivan Cotman

1994-12-01

Full Text Available The processes of forming, petrography, features, properties and exploitation of granite boulders are described. The directional drilling and black powder blasting is the succesful method in exploitation of granite boulders (boulder technology (the paper is published in Croatian.

Quantum theory of the optical and electronic properties of semiconductors

CERN Document Server

Haug, Hartmut

2009-01-01

This invaluable textbook presents the basic elements needed to understand and research into semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. Fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, the optical Stark effect, the semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects, are covered. The material is presented in sufficient detail for graduate students and researchers with a general background in quantum mechanics.This fifth edition includes an additional chapter on 'Quantum Optical Effects' where the theory of quantum optical effects in semiconductors is detailed. Besides deriving the 'semiconductor luminescence equations' and the expression for the stationary luminescence spectrum, the resu...

Epitaxy of semiconductor-superconductor nanowires

DEFF Research Database (Denmark)

Krogstrup, P.; Ziino, N.L.B.; Chang, W.

2015-01-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

On properties of multilayer semiconductor nZnSe-nGaAs structures

CERN Document Server

Duysenbaev, M; Auezov, S A

2002-01-01

Electrical and optoelectronic properties of multilayer semiconductor nZnSe-nGaAs structures have been investigated. The volt-current characteristics showed that the relation I approx V holds at the voltages lower than 0.8 v, then the current decreases with increasing the applied voltage. The spectral sensitive range (0.47-1.7 mu m) and parameters of the structures have been determined. Negative differential conductivity mechanism is discussed. (author)

Suppressing molecular vibrations in organic semiconductors by inducing strain.

Science.gov (United States)

Kubo, Takayoshi; Häusermann, Roger; Tsurumi, Junto; Soeda, Junshi; Okada, Yugo; Yamashita, Yu; Akamatsu, Norihisa; Shishido, Atsushi; Mitsui, Chikahiko; Okamoto, Toshihiro; Yanagisawa, Susumu; Matsui, Hiroyuki; Takeya, Jun

2016-04-04

Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic single-crystal field-effect transistors, by taking advantage of the inherent softness of organic semiconductors. We compress the crystal lattice uniaxially by bending the flexible devices, leading to an improved charge transport. The mobility increases from 9.7 to 16.5 cm(2) V(-1) s(-1) by 70% under 3% strain. In-depth analysis indicates that compressing the crystal structure directly restricts the vibration of the molecules, thus suppresses dynamic disorder, a unique mechanism in organic semiconductors. Since strain can be easily induced during the fabrication process, we expect our method to be exploited to build high-performance organic devices.

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

DEFF Research Database (Denmark)

Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

2009-01-01

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

Engineering charge transport by heterostructuring solution-processed semiconductors

Science.gov (United States)

Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

2017-06-01

Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

Metallic nanoshells with semiconductor cores: optical characteristics modified by core medium properties.

Science.gov (United States)

Bardhan, Rizia; Grady, Nathaniel K; Ali, Tamer; Halas, Naomi J

2010-10-26

It is well-known that the geometry of a nanoshell controls the resonance frequencies of its plasmon modes; however, the properties of the core material also strongly influence its optical properties. Here we report the synthesis of Au nanoshells with semiconductor cores of cuprous oxide and examine their optical characteristics. This material system allows us to systematically examine the role of core material on nanoshell optical properties, comparing Cu(2)O core nanoshells (ε(c) ∼ 7) to lower core dielectric constant SiO(2) core nanoshells (ε(c) = 2) and higher dielectric constant mixed valency iron oxide nanoshells (ε(c) = 12). Increasing the core dielectric constant increases nanoparticle absorption efficiency, reduces plasmon line width, and modifies plasmon energies. Modifying the core medium provides an additional means of tailoring both the near- and far-field optical properties in this unique nanoparticle system.

Charge regulation at semiconductor-electrolyte interfaces.

Science.gov (United States)

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Quantum transport in semiconductor nanowires

NARCIS (Netherlands)

Van Dam, J.

2006-01-01

This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals.

Science.gov (United States)

Niazi, Muhammad R; Li, Ruipeng; Qiang Li, Er; Kirmani, Ahmad R; Abdelsamie, Maged; Wang, Qingxiao; Pan, Wenyang; Payne, Marcia M; Anthony, John E; Smilgies, Detlef-M; Thoroddsen, Sigurdur T; Giannelis, Emmanuel P; Amassian, Aram

2015-11-23

Solution-printed organic semiconductors have emerged in recent years as promising contenders for roll-to-roll manufacturing of electronic and optoelectronic circuits. The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. Here we present a new method based on blade coating of a blend of conjugated small molecules and amorphous insulating polymers to produce OTFTs with consistently excellent performance characteristics (carrier mobility as high as 6.7 cm(2) V(-1) s(-1), low threshold voltages oforganic semiconductor films with transport properties and other figures of merit on par with their single-crystal counterparts.

Novel room temperature ferromagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

2004-06-01

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

Tunable electronic transport properties of silicon-fullerene-linked nanowires: Semiconductor, conducting wire, and tunnel diode

OpenAIRE

Nishio, Kengo; Ozaki, Taisuke; Morishita, Tetsuya; Mikami, Masuhiro

2010-01-01

We explore the possibility of controllable tuning of the electronic transport properties of silicon-fullerene-linked nanowires by encapsulating guest atoms into their cages. Our first-principles calculations demonstrate that the guest-free nanowires are semiconductors, and do not conduct electricity. The iodine or sodium doping improves the transport properties, and makes the nanowires metallic. In the junctions of I-doped and Na-doped NWs, the current travels through the boundary by quantum ...

The control of stoichiometry in Epitaxial semiconductor structures. Interfacial Chemistry: Property relations. A workshop review

Science.gov (United States)

Bachmann, Klaus J.

1995-01-01

A workshop on the control of stoichiometry in epitaxial semiconductor structures was held on August 21-26, 1995 in the hotel Stutenhaus at Vesser in Germany. The secluded location of the workshop in the forest of Thuringia and its informal style stimulated extensive private discussions among the participants and promoted new contacts between young scientists from Eastern and Western Europe and the USA. Topics addressed by the presentations were interactions of precursors to heteroepitaxy and doping with the substrate surface, the control of interfacial properties under the conditions of heteroepitaxy for selected materials systems, methods of characterization of interfaces and native point defects in semiconductor heterostructures and an in depth evaluation of the present status of the control and characterization of the point defect chemistry for one specific semiconductor (ZnGeP2), including studies of both heterostructures and bulk single crystals. The selected examples of presentations and comments given here represent individual choices - made by the author to highlight major points of the discussions.

Modeling of semiconductor optical amplifiers

DEFF Research Database (Denmark)

Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

Composite nanomaterials of semiconductors and noble metals as plasmonic photocatalysts

DEFF Research Database (Denmark)

Engelbrekt, Christian; Law, Matt; Zhang, Jingdong

behavior, and can be more stable under operating conditions. Composite photocatalysts of semiconductor nanoparticles (SNPs) and PNPs exploit broadly the solar spectrum, provide new catalytic routes and expand the scope of solar photocatalysis. The newly initiated project aims at developing composite...

Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

Science.gov (United States)

Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

2017-02-01

Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of CdSe-nanocrystals used in semiconductors for aerospace applications: Production and optical properties

Directory of Open Access Journals (Sweden)

Maroof A. Hegazy

2014-06-01

Full Text Available Semiconductor nanocrystals (NC’s are the materials with dimensions less than 10 nm. When the dimensions of nanocrystals are reduced the bulk bohr diameter, the photo generated electron-hole pair becomes confined and nanocrystal exhibits size dependent upon optical properties. This work is focused on the studying of CdSe semiconductor nanocrystals. These nanocrystals are considered as one of the most widely studies semiconductors because of their size – tunable optical properties from the visible spectrum. CdSe-nanocrystals are produced and obtained throughout the experimental setup initiated at Nano-NRIAG Unit (NNU, which has been constructed and assembled at NRIAG institute. This unit has a specific characterization for preparing chemical compositions, which may be used for solar cell fabrications and space science technology. The materials prepared included cadmium oxide and selinid have sizes ranging between 2.27 nm and 3.75 nm. CdSe-nanocrystals are synthesized in “TOP/TOPO (tri–octyl phosphine/tri–octyl phosphine oxide. Diagnostic tools, include UV analysis, TEM microscope, and X-ray diffraction, which are considered for the analytical studies of the obtained materials. The results show that, in this size regime, the generated particles have unique optical properties, which is achieved from the UV analysis. Also, the TEM image analysis shows the size and shape of the produced particles. These studies are carried out to optimize the photoluminescent efficiency of these nanoparticles. Moreover, the data revealed that, the grain size of nanocrystals is dependent upon the growth time in turn, it leads to a change in the energy gap. Some applications of this class of materials are outlined.

Compound Semiconductor Radiation Detectors

CERN Document Server

Owens, Alan

2012-01-01

Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

Photocatalytic semiconductors synthesis, characterization, and environmental applications

CERN Document Server

Hernández-Ramírez, Aracely

2014-01-01

This critical volume examines the different methods used for the synthesis of a great number of photocatalysts, including TiO2, ZnO and other modified semiconductors, as well as characterization techniques used for determining the optical, structural and morphological properties of the semiconducting materials. Additionally, the authors discuss photoelectrochemical methods for determining the light activity of the photocatalytic semiconductors by means of measurement of properties such as band gap energy, flat band potential and kinetics of hole and electron transfer. Photocatalytic Semiconductors: Synthesis, Characterization and Environmental Applications provide an overview of the semiconductor materials from first- to third-generation photocatalysts and their applications in wastewater treatment and water disinfection. The book further presents economic and toxicological aspects in the production and application of photocatalytic materials.

Semiconductors bonds and bands

CERN Document Server

Ferry, David K

2013-01-01

As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

Science.gov (United States)

Narang, Prineha

This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the

Two-fluid hydrodynamic model for semiconductors

DEFF Research Database (Denmark)

Maack, Johan Rosenkrantz; Mortensen, N. Asger; Wubs, Martijn

2018-01-01

The hydrodynamic Drude model (HDM) has been successful in describing the optical properties of metallic nanostructures, but for semiconductors where several different kinds of charge carriers are present an extended theory is required. We present a two-fluid hydrodynamic model for semiconductors...

Microscopic theory of coherent and incoherent optical properties of semiconductor heterostructures

Energy Technology Data Exchange (ETDEWEB)

Schaefer, Martin

2008-09-02

An important question is whether there is a regime in which lasing from indirect semiconductors is possible. Thus, we discuss this question in this thesis. It is shown that under incoherent emission conditions it is possible to create an exciton condensate in multiple-quantum-well (MQW) systems. The influence of a MQW structure on the exciton lifetime is investigated. For the description of the light-matter interaction of a QW in the coherent excitation regime, the semiconductor Bloch equation (SBE) are used. The incoherent regime is described by the semiconductor luminescence equations (SLE). In principle it is even possible to couple SBE and SLE. The resulting theory is able to describe interactions between coherent and incoherent processes we investigate both, the coherent and the incoherent light-emission regime. Thus we define the investigated system and introduce the many-body Hamiltonian that describes consistently the light-matter interaction in the classical and the quantum limit. We introduce the SBE that allow to compute the light-matter interaction in the coherent scenario. The extended scattering model is used to investigate the absorption of a Ge QW for different time delays after the excitations. In this context, we analyze whether there is a regime in which optical gain can be realized. Then we apply a transfer-matrix method to include into our calculations the influence of the dielectric environment on the optical response. Thereafter the SLE for a MQW system are introduced. We derive a scheme that allows for decoupling environmental effects from the pure PL-emission properties of the QW. The PL of the actual QW system is obtained by multiplying this filter function and the free-space PL that describes the quantum emission into a medium with spatially constant background-refractive index. It is studied how the MQW-Bragg structure influences the PL-emission properties compared to the emission of a single QW device. As a last feature, it is shown

InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors. Growth and properties

Energy Technology Data Exchange (ETDEWEB)

Tran, Lien

2011-04-13

host material InSb during growth. I have investigated the properties of the samples with a range of low Mn content (x<1%). Mn decreases the lattice constant as well as the degree of relaxation of (In,Mn)Sb films. Mn also distributes itself to result in two different and distinct magnetic materials: the diluted magnetic semiconductor (In,Mn)Sb and clusters of ferromagnetic MnSb. The MnSb clusters dominate only on the surface as indicated by the structural characterization. The measured values of Curie temperature T{sub c} for these two materials are found to be highly dependent on Mn concentration. For the DMS alloy (In,Mn)Sb, the Curie temperature appears to be smaller than 50 K, whereas it is greater than 300 K for the MnSb clusters. The occurrence of the high T{sub c} and and MnSb clusters on the surface suggest the possibility to obtain higher T{sub c} by adding more Mn into the host material and etching the samples down to several ten nanometers from the surface to eliminate the MnSb clusters as well as annealing at low temperature to remove the Mn interstitial sites. (orig.)

Predicting suitable optoelectronic properties of monoclinic VON semiconductor crystals for photovoltaics using accurate first-principles computations

KAUST Repository

Harb, Moussab

2015-01-01

Using accurate first-principles quantum calculations based on DFT (including the perturbation theory DFPT) with the range-separated hybrid HSE06 exchange-correlation functional, we predict essential fundamental properties (such as bandgap, optical absorption coefficient, dielectric constant, charge carrier effective masses and exciton binding energy) of two stable monoclinic vanadium oxynitride (VON) semiconductor crystals for solar energy conversion applications. In addition to the predicted band gaps in the optimal range for making single-junction solar cells, both polymorphs exhibit relatively high absorption efficiencies in the visible range, high dielectric constants, high charge carrier mobilities and much lower exciton binding energies than the thermal energy at room temperature. Moreover, their optical absorption, dielectric and exciton dissociation properties are found to be better than those obtained for semiconductors frequently utilized in photovoltaic devices like Si, CdTe and GaAs. These novel results offer a great opportunity for this stoichiometric VON material to be properly synthesized and considered as a new good candidate for photovoltaic applications.

Predicting suitable optoelectronic properties of monoclinic VON semiconductor crystals for photovoltaics using accurate first-principles computations

KAUST Repository

Harb, Moussab

2015-08-26

Using accurate first-principles quantum calculations based on DFT (including the perturbation theory DFPT) with the range-separated hybrid HSE06 exchange-correlation functional, we predict essential fundamental properties (such as bandgap, optical absorption coefficient, dielectric constant, charge carrier effective masses and exciton binding energy) of two stable monoclinic vanadium oxynitride (VON) semiconductor crystals for solar energy conversion applications. In addition to the predicted band gaps in the optimal range for making single-junction solar cells, both polymorphs exhibit relatively high absorption efficiencies in the visible range, high dielectric constants, high charge carrier mobilities and much lower exciton binding energies than the thermal energy at room temperature. Moreover, their optical absorption, dielectric and exciton dissociation properties are found to be better than those obtained for semiconductors frequently utilized in photovoltaic devices like Si, CdTe and GaAs. These novel results offer a great opportunity for this stoichiometric VON material to be properly synthesized and considered as a new good candidate for photovoltaic applications.

Synthesis, characterization, and photo-physical properties of nano-crystallites of CdyZn1-yS semiconductors

International Nuclear Information System (INIS)

Cizeron, Joel

1996-01-01

This research thesis reports the study of the synthesis of particles of semiconductor with a hybrid composition (Cd y Zn 1-y S) in an inverse micellar system. This system is made of nano-scopic water droplets suspended in oil by Brownian movement. Inverse micelles of AOT/water/alkane have been successfully used in laboratory to synthesize semiconductor particles (CdS, Ag 2 S, AgI, PbS) and metallic particles (Ag, Cu, Co) with a diameter of few nanometers. The objective has been to demonstrate the feasibility of synthesises of solid solution with a composition controlled by colloidal techniques. It was then possible to identify new information on the mechanism which governs the size of semiconductor particles. Optical properties of these particles were then studied. These nano-particles exhibit a displacement of their exciton towards high energies; it is the so-called size quantum effect. This effect has been analysed for the particles and their fluorescence [fr

Optical Biosensors Based on Semiconductor Nanostructures

Directory of Open Access Journals (Sweden)

Raúl J. Martín-Palma

2009-06-01

Full Text Available The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented.

Magnetic properties of diluted magnetic semiconductors

NARCIS (Netherlands)

Jonge, de W.J.M.; Swagten, H.J.M.

1991-01-01

A review will be given of the magnetic characteristics of diluted magnetic semiconductors and the relation with the driving exchange mechanisms. II–VI as well as IV–VI compounds will be considered. The relevance of the long-range interaction and the role of the carrier concentration will be

X-ray absorption spectroscopy of semiconductors

CERN Document Server

Ridgway, Mark

2015-01-01

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

Semiconductor spintronics

International Nuclear Information System (INIS)

Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

2007-01-01

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

Organic semiconductors in a spin

CERN Document Server

Samuel, I

2002-01-01

A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

Where science fiction meets reality? With oxide semiconductors.

Energy Technology Data Exchange (ETDEWEB)

Fortunato, E.; Martins, R. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

2011-09-15

Transparent electronics is today one of the most advanced topics for a wide range of device applications, where the key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive components but also as active components similar to what we observe in conventional semiconductors. As passive components they include the use of these materials as dielectrics for a wide range of electronic devices and also as transparent electrical conductors for use in several optoelectronic applications, such as liquid crystal displays, organic light emitting diodes, solar cells, optical sensors etc. As active materials, they exploit the use of truly electronic semiconductors where the main emphasis is being put on transparent thin film transistors, light emitting diodes, lasers, ultraviolet sensors and integrated circuits among others. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals

KAUST Repository

Niazi, Muhammad Rizwan; Li, Ruipeng; Li, Erqiang; Kirmani, Ahmad R.; Abdelsamie, Maged; Wang, Qingxiao; Pan, Wenyang; Payne, Marcia M.; Anthony, John E.; Smilgies, Detlef-M.; Thoroddsen, Sigurdur T; Giannelis, Emmanuel P.; Amassian, Aram

2015-01-01

Solution-printed organic semiconductors have emerged in recent years as promising contenders for roll-to-roll manufacturing of electronic and optoelectronic circuits. The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. Here we present a new method based on blade coating of a blend of conjugated small molecules and amorphous insulating polymers to produce OTFTs with consistently excellent performance characteristics (carrier mobility as high as 6.7 cm2 V−1 s−1, low threshold voltages of<1 V and low subthreshold swings <0.5 V dec−1). Our findings demonstrate that careful control over phase separation and crystallization can yield solution-printed polycrystalline organic semiconductor films with transport properties and other figures of merit on par with their single-crystal counterparts.

Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals

KAUST Repository

Niazi, Muhammad Rizwan

2015-11-23

Solution-printed organic semiconductors have emerged in recent years as promising contenders for roll-to-roll manufacturing of electronic and optoelectronic circuits. The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. Here we present a new method based on blade coating of a blend of conjugated small molecules and amorphous insulating polymers to produce OTFTs with consistently excellent performance characteristics (carrier mobility as high as 6.7 cm2 V−1 s−1, low threshold voltages of<1 V and low subthreshold swings <0.5 V dec−1). Our findings demonstrate that careful control over phase separation and crystallization can yield solution-printed polycrystalline organic semiconductor films with transport properties and other figures of merit on par with their single-crystal counterparts.

Ternary chalcopyrite semiconductors

CERN Document Server

Shay, J L; Pamplin, B R

2013-01-01

Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

33rd International Conference on the Physics of Semiconductors

International Nuclear Information System (INIS)

2017-01-01

Preface to the Proceedings of the 33rd International Conference on the Physics of Semiconductors, Beijing, 2016 Shaoyun Huang 1 , Yingjie Xing 1 , Yang Ji 2 , Dapeng Yu 3 , and Hongqi Xu 1 1 Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China 2 SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China From July 31 st to August 5 th , 2016, the 33rd International Conference on the Physics of Semiconductors (ICPS 2016) was held in Beijing, China, with a great success. The International Conference on the Physics of Semiconductors began in the 1950’s and is a premier biennial meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties. Reflecting the state of the art developments in semiconductor physics, ICPS 2016 served as an international forum for scholars, researchers, and specialists across the globe to discuss future research directions and technological advancements. The main topics of ICPS 2016 included: • Material growth, structural properties and characterization, phonons • Wide-bandgap semiconductors • Narrow-bandgap semiconductors • Carbon: nanotubes and graphene • 2D Materials beyond graphene • Organic semiconductors • Topological states of matter, topological Insulators and Weyl semimetals • Transport in heterostructures • Quantum Hall effects • Spintronics and spin phenomena • Electron devices and applications • Optical properties, optoelectronics, solar cells • Quantum optics, nanophotonics • Quantum information • Other topics in semiconductor physics and devices • Special topic: Majorana fermions in solid state (paper)

Nonadiabatic geometrical quantum gates in semiconductor quantum dots

International Nuclear Information System (INIS)

Solinas, Paolo; Zanghi, Nino; Zanardi, Paolo; Rossi, Fausto

2003-01-01

In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented

Engineering of Semiconductor Nanocrystals for Light Emitting Applications

Directory of Open Access Journals (Sweden)

Francesco Todescato

2016-08-01

Full Text Available Semiconductor nanocrystals are rapidly spreading into the display and lighting markets. Compared with liquid crystal and organic LED displays, nanocrystalline quantum dots (QDs provide highly saturated colors, wide color gamut, resolution, rapid response time, optical efficiency, durability and low cost. This remarkable progress has been made possible by the rapid advances in the synthesis of colloidal QDs and by the progress in understanding the intriguing new physics exhibited by these nanoparticles. In this review, we provide support to the idea that suitably engineered core/graded-shell QDs exhibit exceptionally favorable optical properties, photoluminescence and optical gain, while keeping the synthesis facile and producing QDs well suited for light emitting applications. Solid-state laser emitters can greatly profit from QDs as efficient gain materials. Progress towards fabricating low threshold, solution processed DFB lasers that are optically pumped using one- and two-photon absorption is reviewed. In the field of display technologies, the exploitation of the exceptional photoluminescence properties of QDs for LCD backlighting has already advanced to commercial levels. The next big challenge is to develop the electroluminescence properties of QD to a similar state. We present an overview of QLED devices and of the great perspectives for next generation display and lighting technologies.

A three-dimensional microstructuring technique exploiting the positive photoresist property

International Nuclear Information System (INIS)

Hirai, Yoshikazu; Sugano, Koji; Tsuchiya, Toshiyuki; Tabata, Osamu

2010-01-01

The present paper describes a three-dimensional (3D) thick-photoresist microstructuring technique that exploits the effect of exposure wavelength on dissolution rate distributions in a thick-film diazonaphthoquinone (DNQ) photoresist. In fabricating 3D microstructure with specific applications, it is important to control the spatial dissolution rate distribution in the photoresist layer, since the lithographic performance for 3D microstructuring is largely determined by the details of the dissolution property. To achieve this goal, the effect of exposure wavelength on dissolution rate distributions was applied for 3D microstructuring. The parametric experimental results demonstrated (1) the advantages of the fabrication technique for 3D microstructuring and (2) the necessity of a dedicated simulation approach based on the measured thick-photoresist property for further verification. Thus, a simple and practical photolithography simulation model that makes use of the Fresnel diffraction theory and an empirically characterized DNQ photoresist property was adopted. Simulations revealed good quantitative agreement between the photoresist development profiles of the standard photolithography and the moving-mask UV lithography process. The simulation and experimental results conclude that the g-line (λ = 436 nm) process can reduce the dimensional limitation or complexity of the photolithography process for the 3D microstructuring which leads to nanoscale microstructuring.

Electron spin and nuclear spin manipulation in semiconductor nanosystems

International Nuclear Information System (INIS)

Hirayama, Yoshiro; Yusa, Go; Sasaki, Satoshi

2006-01-01

Manipulations of electron spin and nuclear spin have been studied in AlGaAs/GaAs semiconductor nanosystems. Non-local manipulation of electron spins has been realized by using the correlation effect between localized and mobile electron spins in a quantum dot- quantum wire coupled system. Interaction between electron and nuclear spins was exploited to achieve a coherent control of nuclear spins in a semiconductor point contact device. Using this device, we have demonstrated a fully coherent manipulation of any two states among the four spin levels of Ga and As nuclei. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Hard gap in epitaxial semiconductor-superconductor nanowires

DEFF Research Database (Denmark)

Chang, W.; Albrecht, S. M.; Jespersen, T. S.

2015-01-01

a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate...

Basic semiconductor physics

CERN Document Server

Hamaguchi, Chihiro

2017-01-01

This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

Electrical conductivity, optical properties and mechanical stability of 3, 4, 9, 10-perylenetetracarboxylic dianhidride based organic semiconductor

Science.gov (United States)

Pandey, Mayank; Joshi, Girish M.; Deshmukh, Kalim; Nath Ghosh, Narendra; Nambi Raj, N. Arunai

2015-05-01

The 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) doped polymer films were prepared with Polypyrrole (PPy) and Polyvinyl alcohol (PVA) polymers by solution-casting. The change in structure and chemical composition of samples was identified by XRD and FTIR respectively. The UV-visible spectroscopy demonstrates the optical characteristics and band gap properties of sample. The homogeneous morphology of sample for higher wt% of PTCDA was examined by atomic force microscopy (AFM). The differential scanning calorimetry (DSC) results demonstrate the decrease in melting temperature (Tm) and degree of crystallinity (χc%) of polymeric organic semiconductor. The mechanical property demonstrates the high tensile strength and improved plasticity nature. Impedance spectroscopy was evaluated to determine the conductivity response of polymeric organic semiconductor. The highest DC conductivity (2.08×10-3 S/m) was obtained for 10 wt% of PTCDA at 140 °C. The decrease in activation energy (Ea) represents the non-Debye process and was evaluated from the slope of ln σdc vs. 103/T plot.

Semiconductor Quantum Dots with Photoresponsive Ligands.

Science.gov (United States)

Sansalone, Lorenzo; Tang, Sicheng; Zhang, Yang; Thapaliya, Ek Raj; Raymo, Françisco M; Garcia-Amorós, Jaume

2016-10-01

Photochromic or photocaged ligands can be anchored to the outer shell of semiconductor quantum dots in order to control the photophysical properties of these inorganic nanocrystals with optical stimulations. One of the two interconvertible states of the photoresponsive ligands can be designed to accept either an electron or energy from the excited quantum dots and quench their luminescence. Under these conditions, the reversible transformations of photochromic ligands or the irreversible cleavage of photocaged counterparts translates into the possibility to switch luminescence with external control. As an alternative to regulating the photophysics of a quantum dot via the photochemistry of its ligands, the photochemistry of the latter can be controlled by relying on the photophysics of the former. The transfer of excitation energy from a quantum dot to a photocaged ligand populates the excited state of the species adsorbed on the nanocrystal to induce a photochemical reaction. This mechanism, in conjunction with the large two-photon absorption cross section of quantum dots, can be exploited to release nitric oxide or to generate singlet oxygen under near-infrared irradiation. Thus, the combination of semiconductor quantum dots and photoresponsive ligands offers the opportunity to assemble nanostructured constructs with specific functions on the basis of electron or energy transfer processes. The photoswitchable luminescence and ability to photoinduce the release of reactive chemicals, associated with the resulting systems, can be particularly valuable in biomedical research and can, ultimately, lead to the realization of imaging probes for diagnostic applications as well as to therapeutic agents for the treatment of cancer.

Isotopically controlled semiconductors

Energy Technology Data Exchange (ETDEWEB)

Haller, Eugene E.

2006-06-19

The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Optical properties of Amorphous Semiconductors Part- II: Theory and analysis of optical properties

International Nuclear Information System (INIS)

Hogarth, C. A.

1997-01-01

The atomic and band structural properties of solids have been studied. Reflectance is concerned in spectroscopic measurement of transmission and absorption, since the incident light intensity must be corrected for the loss of light by reflection and which does not penetrate beyond the surface of the material studied.The procedure for estimating E opt and n from the absorption edge of an amorphous semiconductor has been discussed. In high refractive index glasses there is a general correlation between n and the density of the glasses and in designing a particular glass for an optical purpose this can provide a useful guide to composition. The Gladstone-Dale refractivity and the Newton-Drude refractivity have been calculated for different value of b and these relations have been tested for telluride semiconducting glasses and give reasonable agreement in estimations of n directly from the density ρ. 33 refs., 10 figs

Controlling Molecular Doping in Organic Semiconductors.

Science.gov (United States)

Jacobs, Ian E; Moulé, Adam J

2017-11-01

The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Some Exploitation Properties of Wood Plastic Hybrid Composites Based on Polypropylene and Plywood Production Waste

Science.gov (United States)

Kajaks, Janis; Kalnins, Karlis; Uzulis, Sandris; Matvejs, Juris

2015-12-01

During the last 20-30 years many researchers have paid attention to the studies of properties of thewood polymer composites (WPC). A lot of works are closely related to investigations of exploitation properties of wood fibres or wood flour containing polyolefine composites [1, 2]. The most useful from wide selection of polyolefines are polypropylenes, but timber industry waste materials comprising lignocellulose fibres are often used as reinforcement of WPC [3-12]. Plywood industry is not an exception - part of waste materials (by-products) are used for heat energy, i.e. burned. In this work we have approbated reinforcing of polypropylene (PP) with one of the plywood industry by-products, such as birch plywood sawdust (PSWD),which containswood fibre fractions with different length [13]. The main fraction (50%) includes fibres with length l = 0.5 - 1 mm. Our previous study [13] has confirmed that PSWD is a promising filler for PP reinforcing. Addition of PSWD up to 40-50 wt.% has increased WPC tensile and flexural modulus, but decreased deformation ability of PP matrix, impact strength, water resistance and fluidity of composite melts. It was shown [13] that modification of the composites with interfacial modifier - coupling agent maleated polypropylene (MAPP content up to 5-7 wt.%) considerably improved all the abovementioned properties. SEM investigations also confirmed positive action of coupling agent on strengthening of adhesion interaction between components wood and PP matrix. Another way how to make better properties of the WPC is to form hybridcomposites [1, 14-24]. Very popular WPC modifiers are nanoparticle additions like organonanoclays, which increase WPC physical-mechanical properties - microhardness, water resistance and diminish barrier properties and combustibility [1, 2, 14-17, 19, 20]. The goal of this study was to investigate organonanoclays influence on plywood production industry by-product birch plywood sawdust (PSWD) containing

Ballistic superconductivity in semiconductor nanowires

Science.gov (United States)

Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

2017-01-01

Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

Selective photochemical dry etching of compound semiconductors

International Nuclear Information System (INIS)

Ashby, C.I.H.

1988-01-01

When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors: Growth and properties

International Nuclear Information System (INIS)

Tran, Lien

2011-01-01

This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In 1-x Mn x Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 μm, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm 2 /V s Vs with associated electron concentration of 2.9.10 6 cm -3 at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm 2 /V s measured at 300 K, with an associated carrier concentration of 2.6.10 1 6 cm -3 is found for the best sample that was grown at 340 C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In 1-x Mn x Sb/GaAs (001) is prepared by adding a few percent of Mn into the host material InSb during growth. I have

Electronic, Optical, and Thermal Properties of Reduced-Dimensional Semiconductors

Science.gov (United States)

Huang, Shouting

Reduced-dimensional materials have attracted tremendous attention because of their new physics and exotic properties, which are of great interests for fundamental science. More importantly, the manipulation and engineering of matter on an atomic scale yield promising applications for many fields including nanoelectronics, nanobiotechnology, environments, and renewable energy. Because of the unusual quantum confinement and enhanced surface effect of reduced-dimensional materials, traditional empirical models suffer from necessary but unreliable parameters extracted from previously-studied bulk materials. In this sense, quantitative, parameter-free approaches are highly useful for understanding properties of reduced-dimensional materials and, furthermore, predicting their novel applications. The first-principles density functional theory (DFT) is proven to be a reliable and convenient tool. In particular, recent progress in many-body perturbation theory (MBPT) makes it possible to calculate excited-state properties, e.g., quasiparticle (QP) band gap and optical excitations, by the first-principles approach based on DFT. Therefore, during my PhD study, I employed first-principles calculations based on DFT and MBPT to systematically study fundamental properties of typical reduced-dimensional semiconductors, i.e., the electronic structure, phonons, and optical excitations of core-shell nanowires (NWs) and graphene-like two-dimensional (2D) structures of current interests. First, I present first-principles studies on how to engineer band alignments of nano-sized radial heterojunctions, Si/Ge core-shell NWs. Our calculation reveals that band offsets in these one-dimensional (1D) nanostructures can be tailored by applying axial strain or varying core-shell sizes. In particular, the valence band offset can be efficiently tuned across a wide range and even be diminished via applied strain. Two mechanisms contribute to this tuning of band offsets. Furthermore, varying the

The Dynamics of Semiconductor Optical Amplifiers – Modeling and Applications

DEFF Research Database (Denmark)

Mørk, Jesper; Nielsen, Mads Lønstrup; Berg, Tommy Winther

2003-01-01

The importance of semiconductor optical amplifiers is discussed. A semiconductor optical amplifier (SOA) is a semiconductor laser with anti-reflection coated facets that amplifies an injected light signal by means of stimulated emission. SOAs have a number of unique properties that open up...

Traditional Semiconductors in the Two-Dimensional Limit.

Science.gov (United States)

Lucking, Michael C; Xie, Weiyu; Choe, Duk-Hyun; West, Damien; Lu, Toh-Ming; Zhang, S B

2018-02-23

Interest in two-dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac fermion in graphene, but also as a new paradigm in which stacking layers of distinct two-dimensional materials may enable different functionality or devices. Here, through first-principles theory, we reveal a large new class of two-dimensional materials which are derived from traditional III-V, II-VI, and I-VII semiconductors. It is found that in the ultrathin limit the great majority of traditional binary semiconductors studied (a series of 28 semiconductors) are not only kinetically stable in a two-dimensional double layer honeycomb structure, but more energetically stable than the truncated wurtzite or zinc-blende structures associated with three dimensional bulk. These findings both greatly increase the landscape of two-dimensional materials and also demonstrate that in the double layer honeycomb form, even ordinary semiconductors, such as GaAs, can exhibit exotic topological properties.

Squeezing in an injection-locked semiconductor laser

Science.gov (United States)

Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

1993-09-01

The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

Science.gov (United States)

Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

2017-07-28

Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

Directory of Open Access Journals (Sweden)

Lin Wen

2017-07-01

Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

Fabrication and application of amorphous semiconductor devices

International Nuclear Information System (INIS)

Kumurdjian, Pierre.

1976-01-01

This invention concerns the design and manufacture of elecric switching or memorisation components with amorphous semiconductors. As is known some compounds, particularly the chalcogenides, have a resistivity of the semiconductor type in the amorphous solid state. These materials are obtained by the high temperature homogeneisation of several single elements such as tellurium, arsenic, germanium and sulphur, followed by water or air quenching. In particular these compounds have useful switching and memorisation properties. In particular they have the characteristic of not suffering deterioration when placed in an environment subjected to nuclear radiations. In order to know more about the nature and properties of these amorphous semiconductors the French patent No. 71 28048 of 30 June 1971 may be consulted with advantage [fr

Preparations and Characterizations of Luminescent Two Dimensional Organic-inorganic Perovskite Semiconductors

Directory of Open Access Journals (Sweden)

Sanjun Zhang

2010-05-01

Full Text Available This article reviews the synthesis, structural and optical characterizations of some novel luminescent two dimensional organic-inorganic perovskite (2DOIP semiconductors. These 2DOIP semiconductors show a self-assembled nano-layered structure, having the electronic structure of multi-quantum wells. 2DOIP thin layers and nanoparticles have been prepared through different methods. The structures of the 2DOIP semiconductors are characterized by atomic force microscopy and X-ray diffraction. The optical properties of theb DOIP semiconductors are characterized from absorption and photoluminescence spectra measured at room and low temperatures. Influences of different components, in particular the organic parts, on the structural and optical properties of the 2DOIP semiconductors are discussed.

Advanced Semiconductor Heterostructures Novel Devices, Potential Device Applications and Basic Properties

CERN Document Server

Stroscio, Michael A

2003-01-01

This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the pr

Liquid Crystalline Semiconductors Materials, properties and applications

CERN Document Server

Kelly, Stephen; O'Neill, Mary

2013-01-01

This is an exciting stage in the development of organic electronics. It is no longer an area of purely academic interest as increasingly real applications are being developed, some of which are beginning to come on-stream. Areas that have already been commercially developed or which are under intensive development include organic light emitting diodes (for flat panel displays and solid state lighting), organic photovoltaic cells, organic thin film transistors (for smart tags and flat panel displays) and sensors. Within the family of organic electronic materials, liquid crystals are relative newcomers. The first electronically conducting liquid crystals were reported in 1988 but already a substantial literature has developed. The advantage of liquid crystalline semiconductors is that they have the easy processability of amorphous and polymeric semiconductors but they usually have higher charge carrier mobilities. Their mobilities do not reach the levels seen in crystalline organics but they circumvent all of t...

Magnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Bihler, Christoph

2009-04-15

In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

Development and characterization of a semi-conductor laser sensor for real time measurement and identification of atmospheric pollutants

International Nuclear Information System (INIS)

Boulos, F.; Zaatar, Y.; Atanas, J.P.; Bechara, J.

2004-01-01

Full text.Tunable diode laser absorption spectroscopy (TDLAS) in the near infrared (NIR) using semiconductor lasers of compounds between elements of group III (Ga, Al and In) and group V (P, As and Sb) is being increasingly used in various environmental and industrial process control applications. This technique exploits the unique properties of these laser materials i.e., high coherence, high monochromaticity, low divergence and high brightness to permit rapid sensitive detection with high selectivity and spectral resolution. A computer-interfaced near infrared semiconductor laser sensor has been developed in our laboratory for spectroscopic applications in air pollution monitoring. The sensor can be operated in two configurations: open path free beam coupled to a multiple pass White cell and fiber optic guided beam coupled to an evanescent wave sensor. This paper will present an overview of the system's modulation, sensing and data acquisition methods and some recent measurement results, together with a description of ongoing research and development for the improvement of the system's performance and sensitivity

The pursuit of electrically-driven organic semiconductor lasers

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

2014-01-01

Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

Transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure

International Nuclear Information System (INIS)

Wang Zhigang; Zheng Zhiren; Yu Junhua

2007-01-01

The transient gain property of a weak probe field in an asymmetric semiconductor coupled double quantum well structure is reported. The transient process of the system, which is induced by the external coherent coupling field, shows the property of no inverse gain. We find that the transient behavior of the probe field can be tuned by the change of tunneling barrier. Both the amplitude of the transient gain and the frequency of the oscillation can be affected by the lifetime broadening

Fundamentals and Applications of Semiconductor Nanocrystals : A study on the synthesis, optical properties, and interactions of quantum dots

NARCIS (Netherlands)

Koole, R.

2008-01-01

This thesis focuses on both the fundamental aspects as well as applications of colloidal semiconductor nanocrystals, also called quantum dots (QDs). Due to the unique size-dependent optical and electronic properties of QDs, they hold great promise for a wide range of applications like solar cells,

Developing New Nanoprobes from Semiconductor Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Fu, Aihua [Univ. of California, Berkeley, CA (United States)

2006-01-01

In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

Studies of Thermophysical Properties of Metals and Semiconductors by Containerless Processing Under Microgravity

Science.gov (United States)

Seidel, A.; Soellner, W.; Stenzel, C.

2012-01-01

Electromagnetic levitation under microgravity provides unique opportunities for the investigation of liquid metals, alloys and semiconductors, both above and below their melting temperatures, with minimized disturbances of the sample under investigation. The opportunity to perform such experiments will soon be available on the ISS with the EML payload which is currently being integrated. With its high-performance diagnostics systems EML allows to measure various physical properties such as heat capacity, enthalpy of fusion, viscosity, surface tension, thermal expansion coefficient, and electrical conductivity. In studies of nucleation and solidification phenomena the nucleation kinetics, phase selection, and solidification velocity can be determined. Advanced measurement capabilities currently being studied include the measurement and control of the residual oxygen content of the process atmosphere and a complementary inductive technique to measure thermophysical properties.

Structures and electronics of buried and unburied semiconductor interfaces

International Nuclear Information System (INIS)

Kamiya, Itaru

2011-01-01

The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

Science.gov (United States)

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nonlinear optics response of semiconductor quantum wells under high magnetic fields

International Nuclear Information System (INIS)

Chemla, D.S.

1993-07-01

Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW's as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H → ∞. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed

Phase transitions and doping in semiconductor nanocrystals

Science.gov (United States)

Sahu, Ayaskanta

Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

Large Bandgap Semiconductors for Solar Water Splitting

DEFF Research Database (Denmark)

Malizia, Mauro

Photoelectrochemical water splitting represents an eco-friendly technology that could enable the production of hydrogen using water as reactant and solar energy as primary energy source. The exploitation of solar energy for the production of hydrogen would help modern society to reduce the reliance...... on fossil fuels as primary feedstock for hydrogen production and diminish the emission of greenhouse gases in the atmosphere, weakening the global warming phenomenon.The dissertation reports the development of GaP (gallium phosphide) photocathodes as a large bandgap semiconductor for photoelectrochemical...... water splitting devices having tandem design. The increase of the photovoltage produced by GaP under illumination was the main goal of this work. GaP has a bandgap of 2.25 eV and could in theory produce a photovoltage of approximately 1.7 V. Instead, the photovoltage produced by the semiconductor...

Structural, optical and morphological studies of Cd2+ doping in CH3NH3PbI3 perovskite semiconductor at Pb2+ site for photovoltaic applications

Science.gov (United States)

Parrey, Khursheed; Warish, Mohd.; Devi, Nisha; Niazi, A.; Aziz, A.; Ansari, S. G.

2018-05-01

Doping of semiconductors in a controlled mannner have paramount technological importance as far as the optical and electronic properties of the devices are concerned. Hybrid organic-inorganic perovskites (HOPs) as intrinsic semiconductors have sensational properties required for both the solar photovoltaics and perovskite light emitting diodes. However, undoped and complexity in the dpoing process of HOPs have limited their exploitation in the field of elcronics. In this papper we present the synthesis of HOP semiconductor (CH3NH3PbI3) doped in Pb2+ position by Cd2+. We studied the effect of the incorporation of Cd2+ into the crystalline structure and analysed the changes in the properties like crystal structure, optical absorption and the surface morphology. The structure of HOPs confirmed by X-ray diffraction analysis is tetragonal perovskite type. It can be found that the crystallinity of the samples was enhanced with the doping concentration as the intensity of diffraction peaks were observed to increase with doping. The absorption spectra as obtained from UV-Visible spectrophotometry and Tauc plot analysis indicated that the band gap observed (1.73 eV) is direct type and gets reduced to 1.67 eV with the doping concentration. The red shift may be due to the increase in the size of nanocrystalline material with doping.

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

International Nuclear Information System (INIS)

Luo, Zhaochu; Zhang, Xiaozhong

2015-01-01

Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally

Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions.

Science.gov (United States)

Wu, Bing; Zhao, Yinghe; Nan, Haiyan; Yang, Ziyi; Zhang, Yuhan; Zhao, Huijuan; He, Daowei; Jiang, Zonglin; Liu, Xiaolong; Li, Yun; Shi, Yi; Ni, Zhenhua; Wang, Jinlan; Xu, Jian-Bin; Wang, Xinran

2016-06-08

Precise assembly of semiconductor heterojunctions is the key to realize many optoelectronic devices. By exploiting the strong and tunable van der Waals (vdW) forces between graphene and organic small molecules, we demonstrate layer-by-layer epitaxy of ultrathin organic semiconductors and heterostructures with unprecedented precision with well-defined number of layers and self-limited characteristics. We further demonstrate organic p-n heterojunctions with molecularly flat interface, which exhibit excellent rectifying behavior and photovoltaic responses. The self-limited organic molecular beam epitaxy (SLOMBE) is generically applicable for many layered small-molecule semiconductors and may lead to advanced organic optoelectronic devices beyond bulk heterojunctions.

Structural properties of III-V zinc-blende semiconductors under pressure

International Nuclear Information System (INIS)

Froyen, S.; Cohen, M.L.

1983-01-01

The pseudopotential method within the local-density approximation is used to investigate the static and structural properties of some III-V compound semiconductors. Comparisons of calculated total energies as a function of volume and structure yield information about solid-solid phase transformations. At high pressures the results indicate that several metallic structures are lower in energy than the zinc-blende structure. From our results the compounds (AlP, AlAs, GaP, and GaAs) can be divided into two classes. In the Ga compounds, we find a pressure-induced phase transformation to either rocksalt, β-Sn, or NiAs, whereas in the Al compounds rocksalt and NiAs are stabilized with respect to β-Sn. All structures except zinc blende are metallic. We discuss the electronic structure of each phase and show how it relates to structural stability

Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS

Directory of Open Access Journals (Sweden)

Sandra Andrea Mayén-Hernández

2014-01-01

Full Text Available The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloys ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS were investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an aqueous methylene blue solution. The thin film of ZnxCd1-xS annealed under vacuum at 300°C exhibited the highest photocatalytic activity.

Effect of pressure on some physical properties of gallium based semiconductors

International Nuclear Information System (INIS)

Vyas, P S; Thakore, B Y; Jani, A R; Gajjar, P N

2012-01-01

The gallium based semiconductor compounds are very useful materials for optical spectroscopy and optoelectronic applications, we have studied the effect of pressure on various physical properties like total energy, static bulk modulus, energy band gap at the point X on the Jones-zone face, pressure derivative of bulk modulus and equation of state of gallium based binary compounds GaSb, GaAs, GaP and GaN using pseudopotential theory beyond second order with our well established single parametric model potential. We have incorporated Nagy's static local field correction function to include exchange and correlation effects. The results are compared with those obtained using few other local field correction functions. The present results agree satisfactorily with available experimental and other such theoretical data confirming the application.

Synthesis and exploitation of InP/ZnS quantum dots for bioimaging

Science.gov (United States)

Massadeh, Salam; Xu, Shu; Nann, Thomas

2009-02-01

Nano- and cytotoxicity becomes increasingly more important with an increasing number of potential bio-medical applications for semiconductor Quantum Dots (QDs). Therefore, the frequently used CdSe-based QDs are unsuitable per-se, since cadmium is a highly toxic heavy metal and may leach out of QDs. Cadmium-free QDs have not been available for a long time, because the synthesis of e.g. monodisperes and highly crystalline InP QDs caused many problems. We report on the synthesis of InP/ZnS QDs with optical properties similar to those displayed by typical CdSe/ZnS QDs. A major break-through has been reached by addition of zinc ions into the reaction mixture. Furthermore, the transfer of the InP/ZnS QDs to water and their exploitation for bioanalytical applications are reported. It is shown that InP/ZnS QDs can be used to replace CdSe-based ones for almost any bio-medical application.

Influence of hydrostatic pressure on nuclear radiation detector's properties based on semiconductor alloy CdZnTe

International Nuclear Information System (INIS)

Kutnij, V.E.; Kutnij, D.V.; Rybka, A.V.; Nakonechnyj, D.V.; Babun, A.V.

2003-01-01

The influence of hydrostatic pressure on properties of CdZnTe semiconductor detectors (Cd-50,Zn-2,Te-48 mas.%, 5 centre dot 5 centre dot 2 mm) was investigated. Were considered different types of hydrostatic treatment at 100 MPa, second hydrostatic treatment at 100 MPa and 200 MPa. Hydrostatic pressure influence on detectors electric resistance, J-V characteristics and spectrometric parameters was determined

The origin of magnetism in anatase Co-doped TiO2 magnetic semiconductors

NARCIS (Netherlands)

Lee, Y.J.

2010-01-01

Dilute magnetic semiconductors (DMS) can be tailored by doping a small amount of elements containing a magnetic moment into host semiconductors, which leads to a new class of semiconductors with the functionality of tunable magnetic properties. Recently, oxide semiconductors have attained interests

Plasmonic finite-thickness metal-semiconductor-metal waveguide as ultra-compact modulator

DEFF Research Database (Denmark)

Babicheva, Viktoriia; Malureanu, Radu; Lavrinenko, Andrei

2013-01-01

We propose a plasmonic waveguide with semiconductor gain material for optoelectronic integrated circuits. We analyze properties of a finite-thickness metal-semiconductor-metal (F-MSM) waveguide to be utilized as an ultra-compact and fast plasmonic modulator. The InP-based semiconductor core allows...

Semiconductors and semimetals epitaxial microstructures

CERN Document Server

Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

1994-01-01

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

Influence of semiconductor surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts

Energy Technology Data Exchange (ETDEWEB)

Mirowska, Nella [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)]. E-mail: nella.mirowska@pwr.wroc.pl; Misiewicz, Jan [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

2006-06-15

The Schottky barriers formed by Al on Zn{sub 3}P{sub 2} p-type crystals have been studied. Three types of crystals (monocrystal, large-grain crystal and polycrystal) were used for device fabrication. The samples were separated in two groups according to the type of structure and the methods of surface preparation. The samples from the first group were different in structure (monocrystal, large-grain crystal and polycrystals) but prepared in the same way. Three polycrystals with differently prepared surfaces were collected in the second group. Two samples from this group were also annealed in open air at 523 K for 24 h. Measurements of photovoltaic effect at room temperature were carried out to test the impact of surface preparation on photoelectric properties of Al-Zn{sub 3}P{sub 2} contacts. Substantial differences in shape and intensity of PV signal were observed depending on whether the surface of semiconductor was mechanically polished, chemically etched or/and heat treated. The height of potential barrier, {phi} {sub B}, and optical transitions in semiconductor were determined. The value of {phi} {sub B} changed from 0.747 to 0.767 eV for unheated samples and from 0.724 to 0.755 eV for the heated ones. The quality of semiconductor surface seems to have an essential influence on spectral characteristics of Al-Zn{sub 3}P{sub 2} junctions, especially in the case of polycrystals. It appeared that thorough preliminary mechanical polishing of crystals surface provides quite good photoelectric properties of Al-Zn{sub 3}P{sub 2} junctions.

n-Channel semiconductor materials design for organic complementary circuits.

Science.gov (United States)

Usta, Hakan; Facchetti, Antonio; Marks, Tobin J

2011-07-19

Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features are essential for a variety of next-generation electronic products, including low-power flexible displays, inexpensive radio frequency identification (RFID) tags, and printable sensors, among many other applications. Accordingly, the preparation of new materials based on π-conjugated organic molecules or polymers has been a central scientific and technological research focus over the past decade. Currently, p-channel (hole-transporting) materials are the leading class of organic semiconductors. In contrast, high-performance n-channel (electron-transporting) semiconductors are relatively rare, but they are of great significance for the development of plastic electronic devices such as organic field-effect transistors (OFETs). In this Account, we highlight the advances our team has made toward realizing moderately and highly electron-deficient n-channel oligomers and polymers based on oligothiophene, arylenediimide, and (bis)indenofluorene skeletons. We have synthesized and characterized a "library" of structurally related semiconductors, and we have investigated detailed structure-property relationships through optical, electrochemical, thermal, microstructural (both single-crystal and thin-film), and electrical measurements. Our results reveal highly informative correlations between structural parameters at various length scales and charge transport properties. We first discuss oligothiophenes functionalized with perfluoroalkyl and perfluoroarene substituents, which represent the initial examples of high-performance n-channel semiconductors developed in this project. The OFET characteristics of these compounds are presented with an

Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors

Energy Technology Data Exchange (ETDEWEB)

Narducci, Dario, E-mail: dario.narducci@unimib.it [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Consorzio DeltaTi Research (Italy); Selezneva, Ekaterina [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Cerofolini, Gianfranco [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Consorzio DeltaTi Research (Italy); Frabboni, Stefano; Ottaviani, Giampiero [Department of Physics, University of Modena and Reggio Emilia, via Campi 213, 41100 Modena (Italy)

2012-09-15

Energy filtering has been widely considered as a suitable tool to increase the thermoelectric performances of several classes of materials. In its essence, energy filtering provides a way to increase the Seebeck coefficient by introducing a strongly energy-dependent scattering mechanism. Under certain conditions, however, potential barriers may lead to carrier localization, that may also affect the thermoelectric properties of a material. A model is proposed, actually showing that randomly distributed potential barriers (as those found, e.g., in polycrystalline films) may lead to the simultaneous occurrence of energy filtering and carrier localization. Localization is shown to cause a decrease of the actual carrier density that, along with the quantum tunneling of carriers, may result in an unexpected increase of the power factor with the doping level. The model is corroborated toward experimental data gathered by several authors on degenerate polycrystalline silicon and lead telluride. - Graphical abstract: In heavily doped semiconductors potential barriers may lead to both carrier energy filtering and localization. This may lead to an enhancement of the thermoelectric properties of the material, resulting in an unexpected increase of the power factor with the doping level. Highlights: Black-Right-Pointing-Pointer Potential barriers are shown to lead to carrier localization in thermoelectric materials. Black-Right-Pointing-Pointer Evidence is put forward of the formation of a mobility edge. Black-Right-Pointing-Pointer Energy filtering and localization may explain the enhancement of power factor in degenerate semiconductors.

Ionization annealing of semiconductor crystals. Part two: the experiment

Directory of Open Access Journals (Sweden)

Garkavenko A. S.

2014-12-01

Full Text Available There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a continuous flow, the current density in such accelerators is 10–5—10–6 A/cm2, the energy — 0,3—1 MeV. All changes in the properties after such irradiation are resistant at room temperature, and marked properties recovery to baseline values is observed only after prolonged heating of the crystals to a high temperature. In contrast, the authors in their studies observe an improvement of the structural properties of semiconductor crystals (annealing of defects under irradiation with powerful (high current pulsed electron beams of high energy (E0 = 0,3–1 MeV, t = 0,1—10 ns, Ω = 1—10 Hz, j = 20—300 A/cm2. In their previous paper, the authors presented theoretical basis of this effect. This article describes an experimental study on the influence of high-current pulsed electron beams on the optical homogeneity of semiconductor GaAs and CdS crystals, confirming the theory put forward earlier.

Band Engineering Small Bandgap p-Type Semiconductors: Investigations of their Optical and Photoelectrochemical Properties

Science.gov (United States)

Zoellner, Brandon

Mixed-metal oxides containing Mn(II), Cu(I), Ta(V), Nb(V), and V(V) were investigated for their structures and properties as new p-type semiconductors and in the potential applications involving the photocatalytic conversion of water into hydrogen and oxygen. Engineering of the bandgaps was achieved by combining metal cations that have halffilled (Mn 3d5) or filled (Cu 3d10) d-orbitals together with metal cations that have empty (V/Nb/Ta 3/4/5 d0) d-orbitals. The research described herein focuses on the synthesis, optical, electronic, and photocatalytic properties of the metal-oxide semiconductors MnV2O6, Cu3VO 4, CuNb1-xTaxO3, and Cu5(Ta1-xNbx)11O30. Powder X-ray diffraction was used to probe their phase purity as well as atomic-level crystallographic details, i.e. shifts of lattice parameters, chemical compositions, and changes in local bonding environments. Optical measurements revealed visible-light bandgap sizes of ˜1.17 eV (Cu3VO4), ˜1.45 eV (MnV2O6), ˜1.89-1.97 eV (CuNb1-xTa xO3), and ˜1.97-2.50 eV (Cu5(Ta1-xNb x)11O30). The latter two were found to systematically vary as a function of composition. Electrochemical impedance spectroscopy measurements of MnV2O6 and Cu3VO 4 provided the first experimental characterization of the energetic positions of the valence and conduction bands with respect to the water oxidation and reduction potentials, as well as confirmed the p-type nature of each semiconductor. The valence and conduction band energies were found to be suitable for driving either one or both of the water-splitting half reaction (i.e. 2H+ → H2 and 2H2O → O2 + 4H+). Photoelectrochemical measurements on polycrystalline films of the Cu(I)-based semiconductors under visible-light irradiation produced cathodic currents indicative of p-type semiconductor character and chemical reduction at their surfaces in the electrolyte solution. The stability of the photocurrents was increased by the addition of CuO oxide particles either externally deposited or

Proceedings of wide band gap semiconductors

International Nuclear Information System (INIS)

Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

1992-01-01

This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

Synchrotron radiation studies of inorganic-organic semiconductor interfaces

International Nuclear Information System (INIS)

Evans, D.A.; Steiner, H.J.; Vearey-Roberts, A.R.; Bushell, A.; Cabailh, G.; O'Brien, S.; Wells, J.W.; McGovern, I.T.; Dhanak, V.R.; Kampen, T.U.; Zahn, D.R.T.; Batchelor, D.

2003-01-01

Organic semiconductors (polymers and small molecules) are widely used in electronic and optoelectronic technologies. Many devices are based on multilayer structures where interfaces play a central role in device performance and where inorganic semiconductor models are inadequate. Synchrotron radiation techniques such as photoelectron spectroscopy (PES), near-edge X-ray absorption fine structure (NEXAFS) and X-ray standing wave spectroscopy (XSW) provide a powerful means of probing the structural, electronic and chemical properties of these interfaces. The surface-specificity of these techniques allows key properties to be monitored as the heterostructure is fabricated. This methodology has been directed at the growth of hybrid organic-inorganic semiconductor interfaces involving copper phthalocyanine as the model organic material and InSb and GaAs as the model inorganic semiconductor substrates. Core level PES has revealed that these interfaces are abrupt and chemically inert due to the weak bonding between the molecules and the inorganic semiconductor. NEXAFS studies have shown that there is a preferred orientation of the molecules within the organic semiconductor layers. The valence band offsets for the heterojunctions have been directly measured using valence level PES and were found to be very different for copper phthalocyanine on InSb and GaAs (0.7 and -0.3 eV respectively) although an interface dipole is present in both cases

Organic semiconductor heterojunctions and its application in organic light-emitting diodes

CERN Document Server

Ma, Dongge

2017-01-01

This book systematically introduces the most important aspects of organic semiconductor heterojunctions, including the basic concepts and electrical properties. It comprehensively discusses the application of organic semiconductor heterojunctions as charge injectors and charge generation layers in organic light-emitting diodes (OLEDs). Semiconductor heterojunctions are the basis for constructing high-performance optoelectronic devices. In recent decades, organic semiconductors have been increasingly used to fabricate heterojunction devices, especially in OLEDs, and the subject has attracted a great deal of attention and evoked many new phenomena and interpretations in the field. This important application is based on the low dielectric constant of organic semiconductors and the weak non-covalent electronic interactions between them, which means that they easily form accumulation heterojunctions. As we know, the accumulation-type space charge region is highly conductive, which is an important property for high...

Semiconductor composition containing iron, dysprosium, and terbium

Science.gov (United States)

Pooser, Raphael C.; Lawrie, Benjamin J.; Baddorf, Arthur P.; Malasi, Abhinav; Taz, Humaira; Farah, Annettee E.; Kalyanaraman, Ramakrishnan; Duscher, Gerd Josef Mansfred; Patel, Maulik K.

2017-09-26

An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.

Wide gap semiconductor microwave devices

International Nuclear Information System (INIS)

Buniatyan, V V; Aroutiounian, V M

2007-01-01

A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

Integrating magnetism into semiconductor electronics

Energy Technology Data Exchange (ETDEWEB)

Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

2005-06-30

The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

Integrating magnetism into semiconductor electronics

International Nuclear Information System (INIS)

Zakharchenya, Boris P; Korenev, Vladimir L

2005-01-01

The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

Semiconductor lasers and herterojunction leds

CERN Document Server

Kressel, Henry

2012-01-01

Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

Curvature effects on the electronic and transport properties of semiconductor films

Science.gov (United States)

Batista, F. F.; Chaves, Andrey; da Costa, D. R.; Farias, G. A.

2018-05-01

Within the effective mass approximation, we study the curvature effects on the electronic and transport properties of semiconductor films. We investigate how the geometry-induced potential resulting exclusively from periodic ripples in the film induces electronic confinement and a superlattice band structure. For fixed curvature parameters, such a confinement can be easily tuned by an external electric field, hence features of the superlattice band structure such as its energy gaps and band curvature can be controlled by an external parameter. We also show that, for some values of curvature and electric field, it is possible to obtain massless Dirac bands for a smooth curved structure. Moreover, we use a wave packet propagation method to demonstrate that the ripples are responsible for a significant inter-sub-band transition, specially for moderate values of the ripple height.

Colloidal crystal formation in a semiconductor quantum plasma

International Nuclear Information System (INIS)

Zeba, I.; Uzma, Ch.; Jamil, M.; Salimullah, M.; Shukla, P. K.

2010-01-01

The static shielding and the far-field dynamical oscillatory wake potentials in an ion-implanted piezoelectric semiconductor with colloid ions as test particles have been investigated in detail. The dielectric response function of the semiconductor is contributed by the quantum effect of electrons through the Bohm potential and lattice electron-phonon coupling effects. It is found that the quantum effect causes tighter binding of the electrons reducing the quantum Debye shielding length and the effective length of the wake potential to several angstroms. Hence, a quasiquantum lattice of colloid ions can be formed in the semiconductor in the quantum scales giving rise to drastic modifications of the ion-implanted semiconductor properties.

6th Trieste IUPAP-ICTP Semiconductor Symposium : Festschrift Harbeke (Günther)

CERN Document Server

Stutzmann, M

1991-01-01

Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces

Conductivity-limiting bipolar thermal conductivity in semiconductors

Science.gov (United States)

Wang, Shanyu; Yang, Jiong; Toll, Trevor; Yang, Jihui; Zhang, Wenqing; Tang, Xinfeng

2015-01-01

Intriguing experimental results raised the question about the fundamental mechanisms governing the electron-hole coupling induced bipolar thermal conduction in semiconductors. Our combined theoretical analysis and experimental measurements show that in semiconductors bipolar thermal transport is in general a “conductivity-limiting” phenomenon, and it is thus controlled by the carrier mobility ratio and by the minority carrier partial electrical conductivity for the intrinsic and extrinsic cases, respectively. Our numerical method quantifies the role of electronic band structure and carrier scattering mechanisms. We have successfully demonstrated bipolar thermal conductivity reduction in doped semiconductors via electronic band structure modulation and/or preferential minority carrier scatterings. We expect this study to be beneficial to the current interests in optimizing thermoelectric properties of narrow gap semiconductors. PMID:25970560

Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

CERN Document Server

Seebauer, Edmund G

2009-01-01

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

Science.gov (United States)

Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

2017-11-01

Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations.

Science.gov (United States)

Hart, Lewis; Dale, Sara; Hoye, Sarah; Webb, James L; Wolverson, Daniel

2016-02-10

The rhenium and technetium diselenides and disulfides are van der Waals layered semiconductors in some respects similar to more well-known transition metal dichalcogenides (TMD) such as molybdenum sulfide. However, their symmetry is lower, consisting only of an inversion center, so that turning a layer upside-down (that is, applying a C2 rotation about an in-plane axis) is not a symmetry operation, but reverses the sign of the angle between the two nonequivalent in-plane crystallographic axes. A given layer thus can be placed on a substrate in two symmetrically nonequivalent (but energetically similar) ways. This has consequences for the exploitation of the anisotropic properties of these materials in TMD heterostructures and is expected to lead to a new source of domain structure in large-area layer growth. We produced few-layer ReS2 and ReSe2 samples with controlled "up" or "down" orientations by micromechanical cleavage and we show how polarized Raman microscopy can be used to distinguish these two orientations, thus establishing Raman as an essential tool for the characterization of large-area layers.

Evaluation of electrical, structural, thermal and optical properties of Co_3O_4 semiconductor

International Nuclear Information System (INIS)

Dias, Jeferson A.; Maestrelli, Sylma C.; Morelli, Marcio R.

2016-01-01

Among the new semiconductors, the tricobalt tetraoxide is a material of increasing interest; nevertheless, there is a limited number of studies about its properties. Thus, this work has investigated the structural, thermal, optical and electronic properties of Co_3O_4 and its correlation with structure and microstructure. For that, the commercial material was characterized by X-ray diffraction, thermal analysis, diffuse reflectance, FTIR and impedance spectroscopy. The results have shown that the assessed Co_3O_4 has non-stoichiometric spinel structure, presenting a band gap energy capable to completely absorb the visible spectra (1.75 eV). Furthermore, it can be visualized in infrared spectra the bands related to Co-O bonds. The activation energy of electric conduction was 0.35 eV related to the hopping mechanism. Therefore, the results confirm the potentiality of use of Co_3O_4 in optoelectronic devices due to its promising properties for technological utilization. (author)

Structural and electronic properties of Ga{sub 1-x}In{sub x} As{sub 1-y}N{sub y} quaternary semiconductor alloy on GaAs substrate

Energy Technology Data Exchange (ETDEWEB)

Aslan, Metin, E-mail: maslan@sakarya.edu.tr [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey); Yalc Latin-Small-Letter-Dotless-I n, Battal G.; Uestuendag, Mehmet [Sakarya University, Art, Science Faculty, Department of Physics, Esentepe Campus, 54187 Sakarya (Turkey)

2012-04-05

Highlights: Black-Right-Pointing-Pointer In this study we used DFT in the frame of LDA approach to determine electronic and structural properties of GaInAsN alloy. Black-Right-Pointing-Pointer We calculated lattice parameter and band gap energy of binary (GaAs, InAs, and GaN), ternary (GaInAs, GaAsN) and quaternary (GaInAsN) semiconductor alloys. Black-Right-Pointing-Pointer We formulated lattice parameter of GaInAsN respect to In and N composition. Black-Right-Pointing-Pointer We investigated different In and N composition of GaInAsN/GaAs heterostructure for various device applications. - Abstract: We have presented structural and electronic properties of binary (GaAs, GaN and InAs), ternary (Ga{sub 1-x}In{sub x}As and GaAs{sub 1-y}N{sub y}) and quaternary (Ga{sub 1-x}In{sub x}As{sub 1-y}N{sub y}) semiconductor alloys by using a first-principles pseudopotential technique. The structural and electronic properties of Zinc-Blende phase of these materials have been calculated by using the local density approximation (LDA) of the density-functional theory (DFT). To obtain the lattice parameter and band gap energy of the (GaInAsN) quaternary semiconductor alloy we separately calculated the lattice constant and band gap energies of ternary semiconductor alloys, namely GaAsN and GaInAs. The calculated lattice constant, bulk modulus and the direct band gaps for studied semiconductors showed great parallelism with the previous available theoretical and experimental studies.

General specifications for silicon semiconductors for use in radiation dosimetry

International Nuclear Information System (INIS)

Rikner, G.; Grusell, E.

1987-01-01

Silicon semiconductor detectors used in radiation dosimetry have different properties, just as e.g. ionisation chambers, affecting the interaction of radiation with matter in the vicinity of the sensitive volume of the detector, e.g. wall materials, and also the collection of the charges liberated in the detector by the radiation. The charge collection depends on impurities, lattice imperfections and other properties of the semiconductor crystal. In this paper the relevant parameters of a silicon semiconductor detector intended for dosimetry are reviewed. The influence of doping material, doping level, various effects of radiation damage, mechanical construction, detector size, statistical noise and connection to the electrometer are discussed. (author)

Effect of the depolarization field on coherent optical properties in semiconductor quantum dots

Science.gov (United States)

Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu

2018-06-01

We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.

Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

International Nuclear Information System (INIS)

Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

2013-01-01

We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

Crystalline α-Sm2S3 nanowires: Structure and optical properties of an unusual intrinsically degenerate semiconductor

International Nuclear Information System (INIS)

Marin, Chris M.; Wang, Lu; Brewer, Joseph R.; Mei, Wai-Ning; Cheung, Chin Li

2013-01-01

Highlights: ► Developed a rapid synthetic method to generate thin films of α-Sm 2 S 3 nanowires. ► Calculated the electronic structure of α-Sm 2 S 3 by density functional theory. ► Predicted that α-Sm 2 S 3 is an intrinsically degenerate p-type semiconductor. ► Found that the gap in the band states of α-Sm 2 S 3 could be engineered to 1.3 eV via sulfur vacancy. -- Abstract: The lanthanide sulfides have long been a promising class of semiconductors because of their infrared-to-visible range band gaps and excellent thermoelectric properties. However, their applications have been limited due to their time consuming conventional synthetic processes and the lack of sufficient understanding of their electronic properties. To address these shortcomings, here we report a rapid, chemical vapor deposition route which results in thin films of crystalline α-phase samarium sesquisulfide (α-Sm 2 S 3 ) nanowires within a few hours, rather than the typical 4–7 days required in previous synthetic processes. In addition, density functional theory was, for the first time, utilized to calculate the electronic band structure of α-Sm 2 S 3 in order to shed insight into the interpretation of their UV–Vis absorption spectrum. We found that the theoretical direct gap in the band states of α-Sm 2 S 3 is 1.7 eV. Computation results suggest that this gap can be tuned to a solar optimal ∼1.3 eV via systematic sulfur vacancy sites engineered into the crystal structure. Most significantly, the degenerate semiconductor-like behavior long observed in lanthanide sulfide samples have been shown to be present even in the ideal α-Sm 2 S 3 structure, suggesting that the observed heavily p-type behavior is an unusual intrinsic property of the material resulting from the Fermi level being located significantly below the optically active 1.7 eV band edge

Single photon sources with single semiconductor quantum dots

Science.gov (United States)

Shan, Guang-Cun; Yin, Zhang-Qi; Shek, Chan Hung; Huang, Wei

2014-04-01

In this contribution, we briefly recall the basic concepts of quantum optics and properties of semiconductor quantum dot (QD) which are necessary to the understanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantum emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as optical properties of the QDs. We then review the localization of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and performances in terms of strong coupling regime, efficiency, directionality, and polarization control. Furthermore, we will discuss the recent progress on the fabrication of single photon sources, and various approaches for embedding single QDs into microcavities or photonic crystal nanocavities and show how to extend the wavelength range. We focus in particular on new generations of electrically driven QD single photon source leading to high repetition rates, strong coupling regime, and high collection efficiencies at elevated temperature operation. Besides, new developments of room temperature single photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for practical single-photon sources are also discussed.

Superconductivity in doped semiconductors

Energy Technology Data Exchange (ETDEWEB)

Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

2015-07-15

A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

CO2 laser pulse switching by optically excited semiconductors

International Nuclear Information System (INIS)

Silva, V.L. da.

1986-01-01

The construction and the study of a semi-conductor optical switch used for generating short infrared pulses and to analyse the semiconductor characteristics, are presented. The switch response time depends on semiconductor and control laser characteristics. The results obtained using a Ge switch controlled by N 2 , NdYag and Dye lasers are presented. The response time was 50 ns limited by Ge recombination time. The reflectivity increased from 7% to 59% using N 2 laser to control the switch. A simple model for semiconductor optical properties that explain very well the experimental results, is also presented. (author) [pt

Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys

International Nuclear Information System (INIS)

Navamathavan, R.; Arivuoli, D.; Attolini, G.; Pelosi, C.; Choi, Chi Kyu

2007-01-01

Vicker's microindentation tests have been carried out on InP/InP, GaAs/InP, InGaAs/InP and InGaAsP/InP III-V compound semiconductor alloys. The detailed mechanical properties of these binary, ternary and quaternary epilayers were determined from the indentation experiments. Microindentation studies of (1 1 1) GaAs/InP both A and B faces show that the hardness value increases with load and attains a constant for further increase in load and the microhardness values were found to lie between 3.5 and 4.0 GPa. The microhardness values of InGaAs/InP epilayers with different thickness were found to lie between 3.93 and 4.312 GPa. The microhardness values of InGaAsP/InP with different elemental composition were found to lie between 5.08 and 5.73 GPa. The results show that the hardness of the quaternary alloy drastically increases, the reason may be that the increase in As concentration hardens the lattice when phosphorous concentration is less and hardness decreases when phosphorous is increased. It was interestingly observed that the hardness value increases as we proceed from binary to quaternary III-V compound semiconductor alloys

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Science.gov (United States)

Biyikli, Necmi; Haider, Ali

2017-09-01

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Directory of Open Access Journals (Sweden)

S. Tongay

2012-01-01

Full Text Available Using current-voltage (I-V, capacitance-voltage (C-V, and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene and conventional semiconductors. When chemical-vapor-deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC, and GaN semiconductor substrates, there is a strong van-der-Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky barrier. Thermionic-emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications can be made to sensors, where in forward bias there is exponential sensitivity to changes in the Schottky-barrier height due to the presence of absorbates on the graphene, and to analog devices, for which Schottky barriers are integral components. Such applications are promising because of graphene’s mechanical stability, its resistance to diffusion, its robustness at high temperatures, and its demonstrated capability to embrace multiple functionalities.

Noncovalent Intermolecular Interactions in Organic Electronic Materials: Implications for the Molecular Packing vs Electronic Properties of Acenes

KAUST Repository

Sutton, Christopher

2015-10-30

Noncovalent intermolecular interactions, which can be tuned through the toolbox of synthetic chemistry, determine not only the molecular packing but also the resulting electronic, optical, and mechanical properties of materials derived from π-conjugated molecules, oligomers, and polymers. Here, we provide an overview of the theoretical underpinnings of noncovalent intermolecular interactions and briefly discuss the computational chemistry approaches used to understand the magnitude of these interactions. These methodologies are then exploited to illustrate how noncovalent intermolecular interactions impact important electronic properties-such as the electronic coupling between adjacent molecules, a key parameter for charge-carrier transport-through a comparison between the prototype organic semiconductor pentacene with a series of N-substituted heteropentacenes. Incorporating an understanding of these interactions into the design of organic semiconductors can assist in developing novel materials systems from this fascinating molecular class. © 2015 American Chemical Society.

Optical properties of semiconductors quantum microcavity structures

International Nuclear Information System (INIS)

Afshar, A.M.

1996-12-01

The principal phenomenon investigated in this thesis is vacuum Rabi coupling in semiconductor microcavity structures. In these structures quantum well excitons are embedded in a Fabry - Perot like cavity, defined by two semiconductor dielectric mirrors. In such a system the coupled exciton and cavity photon mode form a mixed - mode polariton, where on - resonance there are two branches, each having 50% exciton and 50% photon character. The separation between the upper and lower branches is a measure of the coupling strength where the strength is dependent on the exciton oscillator strength. This interaction is known as vacuum Rabi coupling, and clear anticrossing is seen when the exciton is tuned through the cavity. In our reflectivity experiments we demonstrate control of the coupling between the cavity mode and the exciton by varying temperature, applied electric or magnetic field. Modelling of the reflectivity spectra and the tuning was done using a Transfer Matrix Reflectivity (TMR) model or a linear dispersion model, where in both cases the excitons are treated as Lorentz oscillators. Temperature tuning is achieved because exciton energy decreases with temperature at a much faster rate than the cavity mode. We have demonstrated vacuum Rabi coupling of the cavity mode with both the heavy - hole and light - hole excitons. Electric field tuning is achieved via the quantum confined Stark effect which decreases the exciton energy with increasing field, whilst at the same time the cavity mode energy remains constant. A study of how the electric field reduction of exciton oscillator strength reduces the vacuum Rabi coupling strength is performed. We report the first observation in a semiconductor structure of motional narrowing, seen in both electric field and in temperature tuning experiments at high magnetic field. In magnetic field studies we show how magnetic field induced increase in exciton oscillator strength affects the vacuum Rabi coupling. We also show by

Luminescence in colloidal Mn2+-doped semiconductor nanocrystals

International Nuclear Information System (INIS)

Beaulac, Remi; Archer, Paul I.; Gamelin, Daniel R.

2008-01-01

Recent advances in nanocrystal doping chemistries have substantially broadened the variety of photophysical properties that can be observed in colloidal Mn 2+ -doped semiconductor nanocrystals. A brief overview is provided, focusing on Mn 2+ -doped II-VI semiconductor nanocrystals prepared by direct chemical synthesis and capped with coordinating surface ligands. These Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation. A brief outlook on future research directions is provided. - Graphical abstract: Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation

Semiconductor Optics

CERN Document Server

Klingshirn, Claus F

2012-01-01

This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

Semiconductor high-energy radiation scintillation detector

International Nuclear Information System (INIS)

Kastalsky, A.; Luryi, S.; Spivak, B.

2006-01-01

We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

Progress in Group III nitride semiconductor electronic devices

International Nuclear Information System (INIS)

Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

2012-01-01

Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

Science.gov (United States)

Calvez, S.; Adams, M. J.

2012-09-01

achievements in the June 1987 Special Issue of IEEE Journal of Quantum Electronics. The Millennium Issue of IEEE Journal of Selected Topics in Quantum Electronics presented a further set of articles on historical aspects of the subject as well as a 'snapshot' of current research in June 2000. It is not the intention here to duplicate any of this historical material that is already available, but rather to complement it with personal recollections from researchers who were involved in laser development in the USA, France, Russia and the UK. Hence, in addition to fascinating accounts of the discovery of the theoretical condition for stimulated emission from semiconductors and of the pioneering work at IBM, there are two complementary views of the laser research at the Lebedev Institute, and personal insights into the developments at STL and at Bell Laboratories. These are followed by an account of the scientific and technological connections between the early pioneering breakthroughs and the commercialisation of semiconductor laser products. Turning to the papers from today's researchers, there is coverage of many of the current 'hot' topics including quantum cascade lasers, mid-infrared lasers, high-power lasers, the exciting developments in understanding and exploiting the nonlinear dynamics of lasers, and photonic integrated circuits with extremely high communication data capacity, as well as reports of recent progress on laser materials such as dilute nitrides and bismides, photonic crystals, quantum dots and organic semiconductors. Thanks are due to Jarlath McKenna for sterling support from IOP Publishing and to Peter Blood for instigating this Special Issue and inviting us to serve as Guest Editors.

Mechanisms of current flow in metal-semiconductor ohmic contacts

International Nuclear Information System (INIS)

Blank, T. V.; Gol'dberg, Yu. A.

2007-01-01

Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning.

Science.gov (United States)

Schlesinger, R; Bianchi, F; Blumstengel, S; Christodoulou, C; Ovsyannikov, R; Kobin, B; Moudgil, K; Barlow, S; Hecht, S; Marder, S R; Henneberger, F; Koch, N

2015-04-15

The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach.

Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

Science.gov (United States)

Schlesinger, R.; Bianchi, F.; Blumstengel, S.; Christodoulou, C.; Ovsyannikov, R.; Kobin, B.; Moudgil, K.; Barlow, S.; Hecht, S.; Marder, S.R.; Henneberger, F.; Koch, N.

2015-01-01

The fundamental limits of inorganic semiconductors for light emitting applications, such as holographic displays, biomedical imaging and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and colour range. Innovative hybrid inorganic/organic structures exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavourable energy level offset at hybrid inorganic/organic structures, which rather facilitates charge transfer that quenches light emission. Here, we introduce a technologically relevant method to optimize the hybrid structure's energy levels, here comprising ZnO and a tailored ladder-type oligophenylene. The ZnO work function is substantially lowered with an organometallic donor monolayer, aligning the frontier levels of the inorganic and organic semiconductors. This increases the hybrid structure's radiative emission yield sevenfold, validating the relevance of our approach. PMID:25872919

The ATLAS semi-conductor tracker operation and performance

International Nuclear Information System (INIS)

Robinson, D.

2013-01-01

The Semi-Conductor Tracker (SCT) is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The SCT was installed and commissioned within ATLAS in 2007, and has been used to exploit fully the physics potential of the LHC since the first proton–proton collisions at 7 TeV were delivered in 2009. In this paper, its operational status throughout data taking up to the end of 2011 is presented, and its tracking performance is reviewed. -- Highlights: ► The operation and performance of the ATLAS Semi-Conductor Tracker (SCT) is reviewed. ► More than 99% of the SCT strips have remained operational in all data taking periods so far. ► Tracking performance indicators have met or exceeded design specifications. ► Radiation damage effects match closely expectations from delivered fluence.

Transistor electronics use of semiconductor components in switching operations

CERN Document Server

Rumpf, Karl-Heinz

2014-01-01

Transistor Electronics: Use of Semiconductor Components in Switching Operations presents the semiconductor components as well as their elementary circuits. This book discusses the scope of application of electronic devices to increase productivity. Organized into eight chapters, this book begins with an overview of the general equation for the representation of integer positive numbers. This text then examines the properties and characteristics of basic electronic components, which relates to an understanding of the operation of semiconductors. Other chapters consider the electronic circuit ar

Organic semiconductors in sensor applications

CERN Document Server

Malliaras, George; Owens, Róisín

2008-01-01

Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

Phototreatment of Water by Organic Photosensitizers and Comparison with Inorganic Semiconductors

Directory of Open Access Journals (Sweden)

Merlyn Thandu

2015-01-01

Full Text Available Phototreatment of water is drawing the attention of many as a promising alternative to replace methods like chlorination, ozonization, and other oxidation processes, used in current disinfection methods limiting harmful side-products and by-products that can cause damage to the fauna and flora. Porphyrins, phthalocyanines, and other related organic dyes are well known for their use in photodynamic therapy (PDT. These photosensitizers cause cell death by generating reactive oxygen species (ROS especially singlet oxygen in the presence of light. Such molecules are also being explored for photodynamically treating microbial infections, killing of unwanted pathogens in the environment, and oxidation of chemical pollutants. The process of photosensitisation (phototreatment can be applied for obtaining clean, microbe-free water, thus exploiting the versatile properties of photosensitizers. This review collects the various attempts carried out for phototreatment of water using organic photosensitizers. For comparison, some reports of semiconductors (especially TiO2 used in photocatalytic treatment of water are also mentioned.

Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review

Science.gov (United States)

Felici, Marco; Pettinari, Giorgio; Biccari, Francesco; Capizzi, Mario; Polimeni, Antonio

2018-05-01

We provide a brief survey of the most recent results obtained by performing spatially selective hydrogen irradiation of dilute nitride semiconductors. The striking effects of the formation of stable N–H complexes in these compounds—coupled to the ultrasharp diffusion profile of H therein—can be exploited to tailor the structural (lattice constant) and optoelectronic (energy gap, refractive index, electron effective mass) properties of the material in the growth plane, with a spatial resolution of a few nm. This can be applied to the fabrication of site-controlled quantum dots (QDs) and wires, but also to the realization of the optical elements required for the on-chip manipulation and routing of qubits in fully integrated photonic circuits. The fabricated QDs—which have shown the ability to emit single photons—can also be deterministically coupled with photonic crystal microcavities, proving their inherent suitability to act as integrated light sources in complex nanophotonic devices.

Electron transport and coherence in semiconductor quantum dots and rings

NARCIS (Netherlands)

Van der Wiel, W.G.

2002-01-01

A number of experiments on electron transport and coherence in semiconductor vertical and lateral quantum dots and semiconductor rings is described. Quantum dots are often referred to as "artificial atoms", because of their similarities with real atoms. Examples of such atom-like properties that

Size-dependent nonlocal effects in plasmonic semiconductor particles

DEFF Research Database (Denmark)

Maack, Johan Rosenkrantz; Mortensen, N. Asger; Wubs, Martijn

2017-01-01

Localized surface plasmons (LSP) in semiconductor particles are expected to exhibit spatial nonlocal response effects as the geometry enters the nanometer scale. To investigate these nonlocal effects, we apply the hydrodynamic model to nanospheres of two different semiconductor materials: intrinsic...... InSb and n-doped GaAs. Our results show that the semiconductors indeed display nonlocal effects, and that these effects are even more pronounced than in metals. In a 150 nm InSb particle at 300 K, the LSP frequency is blueshifted 35%, which is orders of magnitude larger than the blueshift in a metal...... particle of the same size. This property, together with their tunability, makes semiconductors a promising platform for experiments in nonlocal effects. Copyright (C)EPLA, 2017...

Synthesis and characterization of a new organic semiconductor material

Energy Technology Data Exchange (ETDEWEB)

Tiffour, Imane [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); Dehbi, Abdelkader [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Mourad, Abdel-Hamid I., E-mail: ahmourad@uaeu.ac.ae [Mechanical Engineering Department, Faculty of Engineering, United Arab Emirates University, Al-Ain, P.O. Box 15551 (United Arab Emirates); Belfedal, Abdelkader [Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); LPCMME, Département de Physique, Université d' Oran Es-sénia, 3100 Oran (Algeria)

2016-08-01

The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε{sub r}, the activation energy E{sub a}, the optical transmittance T and the gap energy E{sub g} have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10{sup −5} S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10{sup −4} S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ{sub max}) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

Synthesis and characterization of a new organic semiconductor material

International Nuclear Information System (INIS)

Tiffour, Imane; Dehbi, Abdelkader; Mourad, Abdel-Hamid I.; Belfedal, Abdelkader

2016-01-01

The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε_r, the activation energy E_a, the optical transmittance T and the gap energy E_g have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10"−"5 S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10"−"4 S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ_m_a_x) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

Introduction to the Physics of Diluted Magnetic Semiconductors

CERN Document Server

Gaj, Jan A

2010-01-01

The book deals with diluted magnetic semiconductors, a class of materials important to the emerging field of spintronics. In these materials semiconducting properties, both transport and optical, are influenced by the presence of magnetic ions. It concentrates on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions) and resulting phenomena (e.g. magnetic polaron formation and spin relaxation). Introduction to the Physics of Diluted Magnetic Semiconductors is addressed to graduate-level and doctoral students and young researchers entering the field. The authors have been actively involved in the creation of this branch of semiconductor physics.

EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

Science.gov (United States)

Chambers, Scott A.; Gallagher, Bryan

2008-05-01

This focus issue of New Journal of Physics is devoted to the materials science of dilute magnetic semiconductors (DMS). A DMS is traditionally defined as a diamagnetic semiconductor doped with a few to several atomic per cent of some transition metal with unpaired d electrons. Several kinds of dopant-dopant interactions can in principle couple the dopant spins leading to a ferromagnetic ground state in a dilute magnetic system. These include superexchange, which occurs principally in oxides and only between dopants with one intervening oxygen, and double exchange, in which dopants of different formal charges exchange an electron. In both of these mechanisms, the ferromagnetic alignment is not critically dependent on free carriers in the host semiconductor because exchange occurs via bonds. A third mechanism, discovered in the last few years, involves electrons associated with lattice defects that can apparently couple dopant spins. This mechanism is not well understood. Finally, the most desirable mechanism is carrier-mediated exchange interaction in which the dopant spins are coupled by itinerant electrons or holes in the host semiconductor. This mechanism introduces a fundamental link between magnetic and electrical transport properties and offers the possibility of new spintronic functionalities. In particular electrical gate control of ferromagnetism and the use of spin polarized currents to carry signals for analog and digital applications. The spin light emitting diode is a prototypical device of this kind that has been extensively used to characterize the extent of spin polarization in the active light emitting semiconductor heterostructure. The prototypical carrier mediated ferromagnetic DMS is Mn-doped GaAs. This and closely related narrow gap III-V materials have been very extensively studied. Their properties are generally quite well understood and they have led to important insights into fundamental properties of ferromagnetic systems with strong spin

Anisotropy-based crystalline oxide-on-semiconductor material

Science.gov (United States)

McKee, Rodney Allen; Walker, Frederick Joseph

2000-01-01

A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

Elucidation and control of electronic properties related to organic semiconductors

International Nuclear Information System (INIS)

Yamane, Hiroyuki; Ueno, Nobuo; Seki, Kazuhiko

2009-01-01

The electronic structure of organic solids and interfaces plays a crucial role in the performance of optoelectronic devices using organic semiconductors such as light-emitting diodes, field-effect transistors, and photovoltaic cells. The functionality of these organic devices is seriously dominated by the geometric structure, which varies depending on the molecular structure and the sample preparation condition. Due to the rapid progress in sample preparation methods and surface science techniques, we can now discuss in detail the correlation of the electronic structure with the geometric structure of organic solids, films, and interfaces. This paper reviews the recent progress of studies in the geometric and electronic structures related to organic semiconductors. (author)

Foreword: Focus on Superconductivity in Semiconductors

Directory of Open Access Journals (Sweden)

Yoshihiko Takano

2008-01-01

Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

Carrier scattering in metals and semiconductors

CERN Document Server

Gantmakher, VF

1987-01-01

The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental

32nd International Conference on the Physics of Semiconductors

Energy Technology Data Exchange (ETDEWEB)

Chelikowsky, James [Univ. of Texas, Austin, TX (United States)

2016-10-17

The International Conference on the Physics of Semiconductors (ICPS) continues a series of biennial conferences that began in the 1950's. ICPS is the premier meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties with an emphasis on new materials and their applications. The meeting will reflect the state of art in the semiconductor physics field and will serve as a forum where scholars, researchers, and specialists can interact to discuss future research directions and technological advancements. The conference typically draws 1,000 international physicists, scientists, and students. This is one of the largest science meetings on semiconductors and related materials to be held in the United States.

Optical properties of quasiperiodically arranged semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Werchner, Marco

2009-12-18

This work consists of two parts which are entitled ''One-Dimensional Resonant Fibonacci Quasicrystals'' and ''Resonant Tunneling of Light in Silicon Nanostructures''. A microscopic theory has been applied to investigate the optical properties of the respective semiconductor nanostructures. The studied one-dimensional resonant Fibonacci quasicrystals consist of GaAs quantum wells (QW) that are separated by either a large spacer L or a small one S. These spacers are arranged according to the Fibonacci sequence LSLLSLSL.. The average spacing satisfies a generalized Bragg condition with respect to the 1s-exciton resonance of the QWs. A theory, that makes use of the transfer-matrix method and that allows for the microscopic description of many-body effects such as excitation-induced dephasing caused by the Coulomb scattering of carriers, has been applied to compute the optical spectra of such structures. A pronounced sharp reflectivity minimum is found in the vicinity of the heavy-hole resonance both in the measured as well as in the calculated linear 54-QW spectra. Specifically, the influence of the carrier density, of the QW arrangement, of a detuning away from the exact Bragg condition, of the average spacing as well as of the ratio of the optical path lengths of the large and small spacers L and S, respectively, and of the QW number on the optical properties of the samples have been studied. Additionally, self-similarity among reflection spectra corresponding to different QW numbers that exceed a Fibonacci number by one is observed, which identifies certain spectral features as true fingerprints of the Fibonacci spacing. In the second part, resonant tunneling of light in stacked structures consisting of alternating parallel layers of silicon and air have been studied theoretically.Light may tunnel through the air barrier due to the existence of evanescent waves inside the air layers if the neighboring silicon layer is close

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

Directory of Open Access Journals (Sweden)

Zheng Huang

2015-09-01

Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

Wave mechanics applied to semiconductor heterostructures

International Nuclear Information System (INIS)

Bastard, G.

1990-01-01

This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

International Nuclear Information System (INIS)

Tan Zhen; Zhao Lian-Feng; Wang Jing; Xu Jun

2014-01-01

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO 2 or Al 2 O 3 dielectric layers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Electrical properties of nanosized non-barrier inhomogeneities in Zn-based metal-semiconductor contacts to InP

DEFF Research Database (Denmark)

Clausen, Thomas; Leistiko, Otto

1998-01-01

We have found that the electrical properties of carriers across the metal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area...... resulting in high values of the specific contact resistance to p-InP. For n(-)-InP, thermionic emission across nanosized inhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V....

The Effects of Different Electron-Phonon Couplings on the Spectral and Transport Properties of Small Molecule Single-Crystal Organic Semiconductors

Directory of Open Access Journals (Sweden)

Carmine Antonio Perroni

2014-03-01

Full Text Available Spectral and transport properties of small molecule single-crystal organic semiconductors have been theoretically analyzed focusing on oligoacenes, in particular on the series from naphthalene to rubrene and pentacene, aiming to show that the inclusion of different electron-phonon couplings is of paramount importance to interpret accurately the properties of prototype organic semiconductors. While in the case of rubrene, the coupling between charge carriers and low frequency inter-molecular modes is sufficient for a satisfactory description of spectral and transport properties, the inclusion of electron coupling to both low-frequency inter-molecular and high-frequency intra-molecular vibrational modes is needed to account for the temperature dependence of transport properties in smaller oligoacenes. For rubrene, a very accurate analysis in the relevant experimental configuration has allowed for the clarification of the origin of the temperature-dependent mobility observed in these organic semiconductors. With increasing temperature, the chemical potential moves into the tail of the density of states corresponding to localized states, but this is not enough to drive the system into an insulating state. The mobility along different crystallographic directions has been calculated, including vertex corrections that give rise to a transport lifetime one order of magnitude smaller than the spectral lifetime of the states involved in the transport mechanism. The mobility always exhibits a power-law behavior as a function of temperature, in agreement with experiments in rubrene. In systems gated with polarizable dielectrics, the electron coupling to interface vibrational modes of the gate has to be included in addition to the intrinsic electron-phonon interaction. While the intrinsic bulk electron-phonon interaction affects the behavior of mobility in the coherent regime below room temperature, the coupling with interface modes is dominant for the

Organic semiconductor growth and morphology considerations for organic thin-film transistors.

Science.gov (United States)

Virkar, Ajay A; Mannsfeld, Stefan; Bao, Zhenan; Stingelin, Natalie

2010-09-08

Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

The ATLAS Semi-Conductor Tracker Operation and Performance

CERN Document Server

Robinson, D; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT), is a silicon strip detector and one of the key precision tracking devices in the Inner Detector of the ATLAS experiment at the CERN Large Hadron Collider (LHC). The SCT was installed and commissioned within ATLAS in 2007, and has been has been used to fully exploit the physics potential of the LHC since the first proton-proton collisions at 7 TeV were delivered in 2009. In this paper, its operational status throughout data taking up to the end of 2011 is presented, and its tracking performance is reviewed.

Wannier-Frenkel hybrid exciton in organic-semiconductor quantum dot heterostructures

International Nuclear Information System (INIS)

Birman, Joseph L.; Huong, Nguyen Que

2007-01-01

The formation of a hybridization state of Wannier Mott exciton and Frenkel exciton in different hetero-structure configurations involving quantum dots is investigated. The hybrid excitons exist at the interfaces of the semiconductors quantum dots and the organic medium, having unique properties and a large optical non-linearity. The coupling at resonance is very strong and tunable by changing the parameters of the systems (dot radius, dot-dot distance, generation of the organic dendrites and the materials of the system etc...). Different semiconductor quantum dot-organic material combination systems have been considered such as a semiconductor quantum dot lattice embedded in an organic host, a semiconductor quantum dot at the center of an organic dendrite, a semiconductor quantum dot coated by an organic shell

Synthesis, Characterization, and Ultrafast Dynamics of Metal, Metal Oxide, and Semiconductor Nanomaterials

OpenAIRE

Wheeler, Damon Andreas

2013-01-01

SYNTHESIS, CHARACTERIZATION, AND ULTRAFAST DYNAMICS OF METAL, METAL OXIDE, AND SEMICONDUCTOR NANOMATERIALSABSTRACTThe optical properties of each of the three main classes of inorganic nanomaterials, metals, metal oxides, and semiconductors differ greatly due to the intrinsically different nature of the materials. These optical properties are among the most fascinating and useful aspects of nanomaterials with applications spanning cancer treatment, sensors, lasers, and solar cells. One techn...

Modification of semiconductors with proton beams. A review

International Nuclear Information System (INIS)

Kozlovskii, V.V.; Lomasov, V.N.; Kozlov, V.A.

2000-01-01

Analysis is given of the progress in the modification of semiconductors by proton beams in fields such as proton-enhanced diffusion, ion-beam mixing, and formation of porous layers. This method of modification (doping) is shown to have high potential in monitoring the properties of semiconductor materials and designing devices of micro and nano electronics as compared to the conventional doping techniques such as thermal diffusion, epitaxy, and ion implantation

Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

KAUST Repository

Ng, Tien Khee; Zhao, Chao; Priante, Davide; Ooi, Boon S.; Hussein, Mohamed Ebaid Abdrabou

2018-01-01

Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

KAUST Repository

Ng, Tien Khee

2018-02-01

Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

Theory of semiconductor junction devices a textbook for electrical and electronic engineers

CERN Document Server

Leck, J H

1967-01-01

Theory of Semiconductor Junction Devices: A Textbook for Electrical and Electronic Engineers presents the simplified numerical computation of the fundamental electrical equations, specifically Poisson's and the Hall effect equations. This book provides the fundamental theory relevant for the understanding of semiconductor device theory. Comprised of 10 chapters, this book starts with an overview of the application of band theory to the special case of semiconductors, both intrinsic and extrinsic. This text then describes the electrical properties of conductivity, semiconductors, and Hall effe

Ag-based semiconductor photocatalysts in environmental purification

Energy Technology Data Exchange (ETDEWEB)

Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

2015-12-15

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Ag-based semiconductor photocatalysts in environmental purification

International Nuclear Information System (INIS)

Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

2015-01-01

Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Gain and Index Dynamics in Semiconductor Lasers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher

Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

Radiation-hard semiconductor detectors for SuperLHC

CERN Document Server

Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

2005-01-01

An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

Organic Donor-Acceptor Complexes as Novel Organic Semiconductors.

Science.gov (United States)

Zhang, Jing; Xu, Wei; Sheng, Peng; Zhao, Guangyao; Zhu, Daoben

2017-07-18

Organic donor-acceptor (DA) complexes have attracted wide attention in recent decades, resulting in the rapid development of organic binary system electronics. The design and synthesis of organic DA complexes with a variety of component structures have mainly focused on metallicity (or even superconductivity), emission, or ferroelectricity studies. Further efforts have been made in high-performance electronic investigations. The chemical versatility of organic semiconductors provides DA complexes with a great number of possibilities for semiconducting applications. Organic DA complexes extend the semiconductor family and promote charge separation and transport in organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). In OFETs, the organic complex serves as an active layer across extraordinary charge pathways, ensuring the efficient transport of induced charges. Although an increasing number of organic semiconductors have been reported to exhibit good p- or n-type properties (mobilities higher than 1 or even 10 cm 2 V -1 s -1 ), critical scientific challenges remain in utilizing the advantages of existing semiconductor materials for more and wider applications while maintaining less complicated synthetic or device fabrication processes. DA complex materials have revealed new insight: their unique molecular packing and structure-property relationships. The combination of donors and acceptors could offer practical advantages compared with their unimolecular materials. First, growing crystals of DA complexes with densely packed structures will reduce impurities and traps from the self-assembly process. Second, complexes based on the original structural components could form superior mixture stacking, which can facilitate charge transport depending on the driving force in the coassembly process. Third, the effective use of organic semiconductors can lead to tunable band structures, allowing the operation mode (p- or n-type) of the transistor to be

Gain dynamics and saturation in semiconductor quantum dot amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher

2004-01-01

Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

Progress of pyrene-based organic semiconductor in organic field effect transistors

Institute of Scientific and Technical Information of China (English)

Yanbin; Gong; Xuejun; Zhan; Qianqian; Li; Zhen; Li

2016-01-01

Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes(OLEDs), organic field effect transistors(OFETs), and organic solar cells(OSCs). Especially, great progresses have been made of pyrene-based organic semiconductors for OFETs in past decades. Due to the difference of molecular structure, pyrene-based organic semiconductors are divided into three categories, pyrene as terminal group, pyrene as center core and fused pyrene derivatives. This minireview gives a brief introduction of the structure-property relationship and application in OFETs about most of pyrene-based semiconducting materials since 2006,illustrating that pyrene is a good building block to construct semiconductors with superior transport property for OFETs. Finally, we provide a summary concerning the methodology to improve the transport property of the pyrene-based semiconducting materials as well as an outlook.

Achieving Optimal Self-Adaptivity for Dynamic Tuning of Organic Semiconductors through Resonance Engineering.

Science.gov (United States)

Tao, Ye; Xu, Lijia; Zhang, Zhen; Chen, Runfeng; Li, Huanhuan; Xu, Hui; Zheng, Chao; Huang, Wei

2016-08-03

Current static-state explorations of organic semiconductors for optimal material properties and device performance are hindered by limited insights into the dynamically changed molecular states and charge transport and energy transfer processes upon device operation. Here, we propose a simple yet successful strategy, resonance variation-based dynamic adaptation (RVDA), to realize optimized self-adaptive properties in donor-resonance-acceptor molecules by engineering the resonance variation for dynamic tuning of organic semiconductors. Organic light-emitting diodes hosted by these RVDA materials exhibit remarkably high performance, with external quantum efficiencies up to 21.7% and favorable device stability. Our approach, which supports simultaneous realization of dynamically adapted and selectively enhanced properties via resonance engineering, illustrates a feasible design map for the preparation of smart organic semiconductors capable of dynamic structure and property modulations, promoting the studies of organic electronics from static to dynamic.

Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

Science.gov (United States)

Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

2013-09-01

Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

Bandgap Optimization of Perovskite Semiconductors for Photovoltaic Applications.

Science.gov (United States)

Xiao, Zewen; Zhou, Yuanyuan; Hosono, Hideo; Kamiya, Toshio; Padture, Nitin P

2018-02-16

The bandgap is the most important physical property that determines the potential of semiconductors for photovoltaic (PV) applications. This Minireview discusses the parameters affecting the bandgap of perovskite semiconductors that are being widely studied for PV applications, and the recent progress in the optimization of the bandgaps of these materials. Perspectives are also provided for guiding future research in this area. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code

International Nuclear Information System (INIS)

Sedlakova, K.; Sagatova, A.; Necas, V.; Zatko, B.

2013-01-01

The potential of silicon carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. The wide bandgap of SiC (3.25 eV for 4H-SiC polytype) compared to that for more conventionally used semiconductors, such as silicon (1.12 eV) and germanium (0.67 eV), makes SiC an attractive semiconductor for use in high dose rate and high ionization nuclear environments. The present work focused on the simulation of particle transport in SiC detectors of fast neutrons using statistical analysis of Monte Carlo radiation transport code MCNPX. Its possibilities in detector design and optimization are presented.(authors)

Retraction of “Accurate Prediction of Essential Fundamental Properties for Semiconductors Used in Solar-Energy Conversion Devices from Range-Separated Hybrid Density Functional Theory”

KAUST Repository

Harb, Moussab

2016-01-01

The author retracts this article due to similarities with a previously published article by Le Bahers, T.; Rerat, M.; Sautet, ́ P. Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT. J. Phys

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

Energy Technology Data Exchange (ETDEWEB)

Kanaki, Toshiki, E-mail: kanaki@cryst.t.u-tokyo.ac.jp; Asahara, Hirokatsu; Ohya, Shinobu, E-mail: ohya@cryst.t.u-tokyo.ac.jp; Tanaka, Masaaki, E-mail: masaaki@ee.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2015-12-14

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

International Nuclear Information System (INIS)

Kanaki, Toshiki; Asahara, Hirokatsu; Ohya, Shinobu; Tanaka, Masaaki

2015-01-01

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I DS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I DS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale

Optical properties of semiconductor nanostructures in magnetic field

Energy Technology Data Exchange (ETDEWEB)

Grochol, M.

2007-04-03

In this work, the near bandgap linear optical properties of semiconductor quantum structures under applied magnetic field are investigated. First, the exciton theory is developed starting with the one-electron Hamiltonian in a crystal, continuing with the Luttinger and Bir-Pikus Hamiltonian, and ending with the exciton Hamiltonian in the envelope function approximation. Further, concentrating on the quantum well and thus assuming strong confinement in the growth direction, the motion parallel and perpendicular to the xy-plane is factorized leading to the well-known single sublevel approximation. A magnetic field perpendicular to the xy-plane is applied, and a general theorem describing the behavior of the energy eigenvalues is derived. The strain calculation within the isotropic elasticity approach is described in detail. The Schroedinger equation is solved numerically for both the full model and the factorization with artificially generated disorder potentials. Furthermore the statistical properties of the disorder in a real quantum well have been analyzed. In particular, temperature dependent photoluminescence spectra and diamagnetic shift statistics, have been compared with the experimental ones and very good agreement has been found. The second part of this thesis deals predominantly with highly symmetrical structures embedded in the quantum well: namely quantum rings and dots. First, adopting an ansatz for the wave function, the Hamiltonian matrix is derived discussing which matrix elements are non-zero according to the symmetry of the potential. Additionally, the expectation values of the current and magnetization operators are evaluated. Then, concentrating on the case of the highest (circular) symmetry, the model of zero width ring is introduced. Within this model the close relation between the oscillatory component of the exciton energy (exciton Aharonov-Bohm effect) and the persistent current is revealed. Examples for different material systems follow

Semiconductor Manufacturing equipment introduction

International Nuclear Information System (INIS)

Im, Jong Sun

2001-02-01

This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors

International Nuclear Information System (INIS)

Brudnyi, V. N.; Kolin, N. G.; Smirnov, L. S.

2007-01-01

A model is developed to analyze numerically the electrical properties and the steady-state (limiting) position of the Fermi level (F lim ) in tetrahedral semiconductors irradiated with high-energy particles. It is shown that an irradiated semiconductor represents a highly compensated material, in which F lim is identical to G >/2, where G > is the average energy gap between the conduction band and valence band within the entire Brillouin zone of the crystal. The experimental values of F lim , the calculated values of G >/2, and the data on the electrical properties of irradiated semiconductors are presented. The chemical trends controlling the variation in the quantity F lim in groups of semiconductors with the similar types of chemical bonding are analyzed

Estimation of Bulk modulus and microhardness of tetrahedral semiconductors

International Nuclear Information System (INIS)

Gorai, Sanjay Kumar

2012-01-01

A general empirical formula was found for calculating of bulk modulus (B) and microhardness (H) from electronegativity and principal quantum number of II-VI, III-V semiconductors. Constant C1, appearing the in the expression of bulk modulus and constants C2 and C3, appearing in the expression of microhardness and the exponent M have following values respectively The numerical values of C1,C2, C3 and M are respectively 206.6, 8.234, 1.291, -1.10 for II-VI 72.4, 31.87, 7.592, -0.95 for III-V semiconductors. Both electro-negativity and principal quantum number can effectively reflect on the chemical bonding behaviour of constituent atoms in these semiconductors. The calculated values of bulk modulus and microhardness are in good agreement with the reported values in the literature. Present study helps in designing novel semiconductor materials, and to further explore the mechanical properties of these semiconductors.

Using of the Modern Semiconductor Devices Based on the SiC

Directory of Open Access Journals (Sweden)

Pavel Drabek

2008-01-01

Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

Modulation doping and delta doping of III-V compound semiconductors

NARCIS (Netherlands)

Hendriks, P.; Zwaal, E.A.E.; Haverkort, J.E.M.; Wolter, J.H.; Razeghi, M.

1991-01-01

The transport properties of the 2D electron gas produced by modulation doping of compound semiconductors are reviewed with attention given to the properties at high electric fields. Experimental studies are discussed in which the transport properties lead to insights into current instabilities and

Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

KAUST Repository

Song, Zhibo; Schultz, Thorsten; Ding, Zijing; Lei, Bo; Han, Cheng; Amsalem, Patrick; Lin, Tingting; Chi, Dongzhi; Wong, Swee Liang; Zheng, Yu Jie; Li, Ming-yang; Li, Lain-Jong; Chen, Wei; Koch, Norbert; Huang, Yu Li; Wee, Andrew Thye Shen

2017-01-01

Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.

Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

KAUST Repository

Song, Zhibo

2017-07-28

Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.

Nanostructured Basaltfiberconcrete Exploitational Characteristics

Science.gov (United States)

Saraykina, K. A.; Shamanov, V. A.

2017-11-01

The article demonstrates that the mass use of basalt fiber concrete (BFC) is constrained by insufficient study of their durability and serviceability in a variety of environments. This research is aimed at the study of the basalt fiber corrosion processes in the cement stone of BFC, the control of the new products structure formation in order to protect the reinforcing fiber from alkaline destruction and thereby improve the exploitational characteristics of the composite. The research result revealed that the modification of basaltfiber concrete by the dispersion of MWNTs contributes to the directional formation of new products in the cement matrix. The HAM additive in basaltfiberconcrete provides for the binding of portlandite to low-basic calcium hydroaluminosilicates, thus reducing the aggressive effect of the cement environment on the reinforcing fibers properties. The complex modification of BFC with nanostructured additives provides for an increase in its durability and exploitational properties (strength, frost resistance and water resistance) due to basalt fiber protection from alkali corrosion on account of the compacting of the contact zone “basalt fiber - cement stone” and designing of the new products structure and morphology of cement matrix over the fiber surface.

Highly Sensitive and Very Stretchable Strain Sensor Based on a Rubbery Semiconductor.

Science.gov (United States)

Kim, Hae-Jin; Thukral, Anish; Yu, Cunjiang

2018-02-07

There is a growing interest in developing stretchable strain sensors to quantify the large mechanical deformation and strain associated with the activities for a wide range of species, such as humans, machines, and robots. Here, we report a novel stretchable strain sensor entirely in a rubber format by using a solution-processed rubbery semiconductor as the sensing material to achieve high sensitivity, large mechanical strain tolerance, and hysteresis-less and highly linear responses. Specifically, the rubbery semiconductor exploits π-π stacked poly(3-hexylthiophene-2,5-diyl) nanofibrils (P3HT-NFs) percolated in silicone elastomer of poly(dimethylsiloxane) to yield semiconducting nanocomposite with a large mechanical stretchability, although P3HT is a well-known nonstretchable semiconductor. The fabricated strain sensors exhibit reliable and reversible sensing capability, high gauge factor (gauge factor = 32), high linearity (R 2 > 0.996), and low hysteresis (degree of hysteresis wearable smart gloves. Systematic investigations in the materials design and synthesis, sensor fabrication and characterization, and mechanical analysis reveal the key fundamental and application aspects of the highly sensitive and very stretchable strain sensors entirely from rubbers.

Synthesis, optical properties and photostability of novel fluorinated organic–inorganic hybrid (R–NH3)2PbX4 semiconductors

International Nuclear Information System (INIS)

Wei, Y; Lauret, J-S; Deleporte, E; Audebert, P; Galmiche, L

2013-01-01

We report on the synthesis and the optical properties of several novel semiconductors (R–NH 3 ) 2 PbX 4 (X = Br − , I − or Cl − ). These semiconductors are two-dimensional organic–inorganic perovskite (2DOIP) materials and have multiple quantum-well energy level structures. We vary the organic components (R-NH 3 + ), introducing fluorine atoms into the organic part, on the phenyl ring of the amine. We discuss its influence on the self-organization ability and long-term photostability of the 2DOIPs. The trends of introducing fluorine atoms on the self-organization and long-term photostability of 2DOIPs are obtained by analysing the optical experimental results, and show that the influence of the fluorine position on the benzene ring is quite important. The most promising compounds seem to be the ones with the fluorine atom sitting on the para position of the phenyl group. (paper)

Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires.

Science.gov (United States)

Zamani, Reza R; Hage, Fredrik S; Lehmann, Sebastian; Ramasse, Quentin M; Dick, Kimberly A

2018-03-14

Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

Science.gov (United States)

Tongay, Sefaattin; Suh, Joonki; Ataca, Can; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Raghunathanan, Rajamani; Zhou, Jian; Ogletree, Frank; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao

2013-01-01

Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering. PMID:24029823

Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

Science.gov (United States)

Isik, Dilek

This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

Semiconductor Quantum Dash Broadband Emitters: Modeling and Experiments

KAUST Repository

Khan, Mohammed Zahed Mustafa

2013-10-01

Broadband light emitters operation, which covers multiple wavelengths of the electromagnetic spectrum, has been established as an indispensable element to the human kind, continuously advancing the living standard by serving as sources in important multi-disciplinary field applications such as biomedical imaging and sensing, general lighting and internet and mobile phone connectivity. In general, most commercial broadband light sources relies on complex systems for broadband light generation which are bulky, and energy hungry. \\tRecent demonstration of ultra-broadband emission from semiconductor light sources in the form of superluminescent light emitting diodes (SLDs) has paved way in realization of broadband emitters on a completely novel platform, which offered compactness, cost effectiveness, and comparatively energy efficient, and are already serving as a key component in medical imaging systems. The low power-bandwidth product is inherent in SLDs operating in the amplified spontaneous emission regime. A quantum leap in the advancement of broadband emitters, in which high power and large bandwidth (in tens of nm) are in demand. Recently, the birth of a new class of broadband semiconductor laser diode (LDs) producing multiple wavelength light in stimulated emission regime was demonstrated. This very recent manifestation of a high power-bandwidth-product semiconductor broadband LDs relies on interband optical transitions via quantum confined dot/dash nanostructures and exploiting the natural inhomogeneity of the self-assembled growth technology. This concept is highly interesting and extending the broad spectrum of stimulated emission by novel device design forms the central focus of this dissertation. \\tIn this work, a simple rate equation numerical technique for modeling InAs/InP quantum dash laser incorporating the properties of inhomogeneous broadening effect on lasing spectra was developed and discussed, followed by a comprehensive experimental analysis

Semiconductor electrolyte photovoltaic energy converter

Science.gov (United States)

Anderson, W. W.; Anderson, L. B.

1975-01-01

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications

DEFF Research Database (Denmark)

Berg, Tommy Winther

2004-01-01

This thesis describes the physics and applications of quantum dot semiconductor optical amplifiers based on numerical simulations. These devices possess a number of unique properties compared with other types of semiconductor amplifiers, which should allow enhanced performance of semiconductor...... respects is comparable to those of fiber amplifiers. The possibility of inverting the optically active states to a large degree is essential in order to achieve this performance. Optical signal processing through cross gain modulation and four wave mixing is modeled and described. For both approaches...... and QW devices and to experiments on quantum dot amplifiers. These comparisons outline the qualitative differences between the different types of amplifiers. In all cases focus is put on the physical processes responsible the differences....

Study on optoelectronic properties of Spiro-CN for developing an efficient OLED

Science.gov (United States)

Mishra, Ashok Kumar

2018-05-01

There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) Spiro-CN (spirobifluorene skeletons) Spiro is one of these reported noble metal-free TADF molecules which offers unique optical and electronic properties arising from the efficient transition and reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the Spiro-CN compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the Spiro-CN organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

Materials for n-type organic electronics: synthesis and properties of fluoroarene-thiophene semiconductors

Science.gov (United States)

Facchetti, Antonio; Yoon, Myung-Han; Katz, Howard E.; Marks, Tobin J.

2003-11-01

Recent progress in the field of organic electronics is due to a fruitful combination of both innovative molecular design and promising low-cost material/device assembly. Targeting the first strategy, we present here the general synthesis of fluoroarene-containing thiophene-based semiconductors and the study of their properties with respect to the corresponding fluorine-free hole-transporting analogues. The new compounds have been characterized by elemental analysis, mass spectrometry, and 1H- and 19F NMR. The dramatic influence of fluorine substitution and molecular architecture has been investigated by solution/film optical absorption, fluorescence emission, and cyclic voltammetry. Single crystal data for all of the oligomers have been obtained and will be presented. Film microstructure and morphology of this new class of materials have been studied by XRD and SEM. Particular emphasis will be posed on the solution-processable oligomers and polymers.

Probing and exploiting the chaotic dynamics of a hydrodynamic photochemical oscillator to implement all the basic binary logic functions

Energy Technology Data Exchange (ETDEWEB)

Hayashi, Kenta [Department of Mechanical Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu-shi, Shiga 525-8577 (Japan); Department of Chemistry, Biology, and Biotechnology, University of Perugia, 06123 Perugia (Italy); Gotoda, Hiroshi [Department of Mechanical Engineering, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585 (Japan); Gentili, Pier Luigi, E-mail: pierluigi.gentili@unipg.it [Department of Chemistry, Biology, and Biotechnology, University of Perugia, 06123 Perugia (Italy)

2016-05-15

The convective motions within a solution of a photochromic spiro-oxazine being irradiated by UV only on the bottom part of its volume, give rise to aperiodic spectrophotometric dynamics. In this paper, we study three nonlinear properties of the aperiodic time series: permutation entropy, short-term predictability and long-term unpredictability, and degree distribution of the visibility graph networks. After ascertaining the extracted chaotic features, we show how the aperiodic time series can be exploited to implement all the fundamental two-inputs binary logic functions (AND, OR, NAND, NOR, XOR, and XNOR) and some basic arithmetic operations (half-adder, full-adder, half-subtractor). This is possible due to the wide range of states a nonlinear system accesses in the course of its evolution. Therefore, the solution of the convective photochemical oscillator results in hardware for chaos-computing alternative to conventional complementary metal-oxide semiconductor-based integrated circuits.

Temperature dependent electronic conduction in semiconductors

International Nuclear Information System (INIS)

Roberts, G.G.; Munn, R.W.

1980-01-01

This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

Energy Technology Data Exchange (ETDEWEB)

Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

2014-06-30

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

Electrostatic separation for recycling conductors, semiconductors, and nonconductors from electronic waste.

Science.gov (United States)

Xue, Mianqiang; Yan, Guoqing; Li, Jia; Xu, Zhenming

2012-10-02

Electrostatic separation has been widely used to separate conductors and nonconductors for recycling e-waste. However, the components of e-waste are complex, which can be classified as conductors, semiconductors, and nonconductors according to their conducting properties. In this work, we made a novel attempt to recover the mixtures containing conductors (copper), semiconductors (extrinsic silicon), and nonconductors (woven glass reinforced resin) by electrostatic separation. The results of binary mixtures separation show that the separation of conductor and nonconductor, semiconductor and nonconductor need a higher voltage level while the separation of conductor and semiconductor needs a higher roll speed. Furthermore, the semiconductor separation efficiency is more sensitive to the high voltage level and the roll speed than the conductor separation efficiency. An integrated process was proposed for the multiple mixtures separation. The separation efficiency of conductors and semiconductors can reach 82.5% and 88%, respectively. This study contributes to the efficient recycling of valuable resources from e-waste.

Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

Science.gov (United States)

Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

2017-12-13

A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends.

Science.gov (United States)

Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

2016-08-02

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed.

Temperature control of power semiconductor devices in traction applications

Science.gov (United States)

Pugachev, A. A.; Strekalov, N. N.

2017-02-01

The peculiarity of thermal management of traction frequency converters of a railway rolling stock is highlighted. The topology and the operation principle of the automatic temperature control system of power semiconductor modules of the traction frequency converter are designed and discussed. The features of semiconductors as an object of temperature control are considered; the equivalent circuit of thermal processes in the semiconductors is suggested, the power losses in the two-level voltage source inverters are evaluated and analyzed. The dynamic properties and characteristics of the cooling fan induction motor electric drive with the scalar control are presented. The results of simulation in Matlab are shown for the steady state of thermal processes.

Directional Scattering of Semiconductor Nanoparticles Embedded in a Liquid Crystal

Directory of Open Access Journals (Sweden)

Braulio García-Cámara

2014-04-01

Full Text Available Light scattering by semiconductor nanoparticles has been shown to be more complex than was believed until now. Both electric and magnetic responses emerge in the visible range. In addition, directional effects on light scattering of these nanoparticles were recently obtained. In particular, zero backward and minimum-forward scattering are observed. These phenomena are very interesting for several applications such as, for instance, optical switches or modulators. The strong dependence of these phenomena on the properties of both the particle and the surrounding medium can be used to tune them. The electrical control on the optical properties of liquid crystals could be used to control the directional effects of embedded semiconductor nanoparticles. In this work, we theoretically analyze the effects on the directional distribution of light scattering by these particles when the refractive index of a surrounded liquid crystal changes from the ordinary to the extraordinary configuration. Several semiconductor materials and liquid crystals are studied in order to optimize the contrast between the two states.

Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI Mass Spectrometric Approaches to Proteome Analysis

Directory of Open Access Journals (Sweden)

Suresh Kumar Kailasa

2013-12-01

Full Text Available Semiconductor quantum dots (QDs or nanoparticles (NPs exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis.

Optical generation and control of quantum coherence in semiconductor nanostructures

CERN Document Server

Slavcheva, Gabriela

2010-01-01

The unprecedented control of coherence that can be exercised in quantum optics of atoms and molecules has stimulated increasing efforts in extending it to solid-state systems. One motivation to exploit the coherent phenomena comes from the emergence of the quantum information paradigm, however many more potential device applications ranging from novel lasers to spintronics are all bound up with issues in coherence. The book focuses on recent advances in the optical control of coherence in excitonic and polaritonic systems as model systems for the complex semiconductor dynamics towards the goal

Trap level spectroscopy in amorphous semiconductors

CERN Document Server

Mikla, Victor V

2010-01-01

Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.Provides information on the most used spectroscopic techniquesDiscusses the advantages and disadvantages of each technique

Laser action on rare earth doped nitride semiconductor thin layers

International Nuclear Information System (INIS)

Oussif, A.; Diaf, M.

2010-01-01

Complete text of publication follows. The structure, chemical composition, properties, and their relationships in solids lay the foundation of materials science. Recently, great interest in rare-earth (RE)-doped wide-bandgap semiconductors, which combine the electronic properties of semiconductors with the unique luminescence features of RE ions, is from the fundamental standpoint of structure-composition-properties of solids. At first, a significant amount of work has been reported on the study of infrared emissions from Er 3+- doped semiconductors because Er 3+ exhibits luminescence at 1.54 μm, a wavelength used in optical communications. Since Steckl and Birkhahn first reported visible emission associated with Er from GaN:Er films, the RE-doped semiconductors have received considerable interest for possible application in light emitting devices. Molecular-beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) have been used mainly to grow GaN host films. The RE dopants were typically incorporated into the host films by in situ doping during the growth or by ion implantation after the growth. GaN doped with rare-earth elements (RE) hold significant potential for applications in optical devices, since they show sharp intense luminescence which is only minimally affected by temperature variations. Among the various RE dopants, Eu seems to be the most interesting, since it yields red luminescence 622 nm which has not been realized in commercially available light emitting devices (LEDs) that use InGaN active layers. We have earlier reported single crystalline growth of Eu-doped GaN and nearly temperature independent red luminescence at 622 nm originating from the intra-4f-4f transition of the Eu 3+ ion. The red luminescence was analyzed and determined to be generated through trap-level-mediated energy transfer from the semiconductor host.

Semiconductor quantum dot-sensitized solar cells.

Science.gov (United States)

Tian, Jianjun; Cao, Guozhong

2013-10-31

Semiconductor quantum dots (QDs) have been drawing great attention recently as a material for solar energy conversion due to their versatile optical and electrical properties. The QD-sensitized solar cell (QDSC) is one of the burgeoning semiconductor QD solar cells that shows promising developments for the next generation of solar cells. This article focuses on recent developments in QDSCs, including 1) the effect of quantum confinement on QDSCs, 2) the multiple exciton generation (MEG) of QDs, 3) fabrication methods of QDs, and 4) nanocrystalline photoelectrodes for solar cells. We also make suggestions for future research on QDSCs. Although the efficiency of QDSCs is still low, we think there will be major breakthroughs in developing QDSCs in the future.

Electronic and optical properties of defect CdIn_2Te_4 chalcopyrite semiconductor: A first principle approach

International Nuclear Information System (INIS)

Mishra, S.; Ganguli, B.

2016-01-01

We present detailed study of structural, electronic and optical properties of CdIn_2Te_4 compound. The calculations are carried out using Density Functional theory based Tight Binding Linear Muffin Tin Orbital method. The compound is found to be direct band gap semiconductor with a band gap of 1.03 eV. The band gap is within the limit of LDA underestimation. The calculated structural parameters agree well with the available experimental values. We find a decrements of 9.6% in band gap and significant effects on overall electronic and optical properties due to structural distortions. These effects on optical properties come mainly from the change in transition probability. An-isotropic nature of optical properties get enhanced due to structural distortion. The Calculated real & imaginary parts of dielectric constant and static dielectric constant agree well with the available experimental result. - Highlights: • We present ab-initio calculations of electronic & optical properties of CdIn_2Te_4. • Band gap get reduced by 9.6% due to structural distortion. • Structural distortion has significant effects on optical properties. • Anisotropic nature of optical response functions get enhanced by structural distortion. • Calculated dielectric constant agrees with experimental value.

Microbial synthesis of chalcogenide semiconductor nanoparticles: a review.

Science.gov (United States)

Jacob, Jaya Mary; Lens, Piet N L; Balakrishnan, Raj Mohan

2016-01-01

Chalcogenide semiconductor quantum dots are emerging as promising nanomaterials due to their size tunable optoelectronic properties. The commercial synthesis and their subsequent integration for practical uses have, however, been contorted largely due to the toxicity and cost issues associated with the present chemical synthesis protocols. Accordingly, there is an immediate need to develop alternative environment-friendly synthesis procedures. Microbial factories hold immense potential to achieve this objective. Over the past few years, bacteria, fungi and yeasts have been experimented with as eco-friendly and cost-effective tools for the biosynthesis of semiconductor quantum dots. This review provides a detailed overview about the production of chalcogen-based semiconductor quantum particles using the inherent microbial machinery. © 2015 The Authors. Microbial Biotechnology published by John Wiley & Sons Ltd and Society for Applied Microbiology.

Physical properties and analytical models of band-to-band tunneling in low-bandgap semiconductors

International Nuclear Information System (INIS)

Shih, Chun-Hsing; Dang Chien, Nguyen

2014-01-01

Low-bandgap semiconductors, such as InAs and InSb, are widely considered to be ideal for use in tunnel field-effect transistors to ensure sufficient on-current boosting at low voltages. This work elucidates the physical and mathematical considerations of applying conventional band-to-band tunneling models in low-bandgap semiconductors, and presents a new analytical alternative for practical use. The high-bandgap tunneling generates most at maximum field region with shortest tunnel path, whereas the low-bandgap generations occur dispersedly because of narrow tunnel barrier. The local electrical field associated with tunneling-electron numbers dominates in low-bandgap materials. This work proposes decoupled electric-field terms in the pre-exponential factor and exponential function of generation-rate expressions. Without fitting, the analytical results and approximated forms exhibit great agreements with the sophisticated forms both in high- and low-bandgap semiconductors. Neither nonlocal nor local field is appropriate to be used in numerical simulations for predicting the tunneling generations in a variety of low- and high-bandgap semiconductors

Positron annihilation and Wheeler complexes in semiconductors

International Nuclear Information System (INIS)

Prokop'ev, E.P.

1995-01-01

Properties of Ps-Ex (positron-exciton) complex nature Wheeler complexes that may be formed at irradiation of semiconductors and ion crystals by positrons at low temperature under conditions of optical excitation by excitons are studied. Binding energy of similar and more complex systems regarding decomposition in Ps and Ex and/or Ex ± exceeds, at least, 0.1 eV, while lifetime regarding biquantum-self-annihilation constitutes τ 2γ ∼5.02x10 - 10 κ c 3 c (κ c -phenomenological parameter of the effective mass method). The lifetime estimations enabled to conclude that Ps-Ex complexes may be detected in some oxide semiconductors, in zinc sulfide, as well as, in alkaline-haloid crystals. At the same time, in silicon, gallium arsenide and in other semiconductors of A 3 B 5 and A 2 B 6 it is highly improbable to observe these complexes. 27 refs

A comparative study of semiconductor-based plasmonic metamaterials

DEFF Research Database (Denmark)

Naik, Gururaj V.; Boltasseva, Alexandra

2011-01-01

and very large negative real permittivity values, and in addition, their optical properties cannot be tuned. These issues that put severe constraints on the device applications of MMs could be overcome if semiconductors are used as plasmonic materials instead of metals. Heavily doped, wide bandgap oxide...... semiconductors could exhibit both a small negative real permittivity and relatively small losses in the NIR. Heavily doped oxides of zinc and indium were already reported to be good, low loss alternatives to metals in the NIR range. Here, we consider these transparent conducting oxides (TCOs) as alternative...

Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

Science.gov (United States)

Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

2018-04-01

The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

Magnetic and transoprt properties of (III, Mn)V ferromagnetic semiconductors

Czech Academy of Sciences Publication Activity Database

Jungwirth, Tomáš; Sinova, J.; MacDonald, A. H.

2003-01-01

Roč. 104, - (2003), s. 103-112 ISSN 0587-4246 R&D Projects: GA ČR GA202/98/0085 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.473, year: 2003

Radiation tolerance of amorphous semiconductors

International Nuclear Information System (INIS)

Nicolaides, R.V.; DeFeo, S.; Doremus, L.W.

1976-01-01

In an attempt to determine the threshold radiation damage in amorphous semiconductors, radiation tests were performed on amorphous semiconductor thin film materials and on threshold and memory devices. The influence of flash x-rays and neutron radiation upon the switching voltages, on- and off-state characteristics, dielectric response, optical transmission, absorption band edge and photoconductivity were measured prior to, during and following irradiation. These extensive tests showed the high radiation tolerance of amorphous semiconductor materials. Electrical and optical properties, other than photoconductivity, have a neutron radiation tolerance threshold above 10 17 nvt in the steady state and 10 14 nvt in short (50 μsec to 16 msec) pulses. Photoconductivity increases by 1 1 / 2 orders of magnitude at the level of 10 14 nvt (short pulses of 50 μsec). Super flash x-rays up to 5000 rads (Si), 20 nsec, do not initiate switching in off-state samples which are voltage biased up to 90 percent of the threshold voltage. Both memory and threshold amorphous devices are capable of switching on and off during nuclear radiation transients at least as high as 2 x 10 14 nvt in 50 μsec pulses

Structural properties and sensing characteristics of high-k Ho2O3 sensing film-based electrolyte-insulator-semiconductor

International Nuclear Information System (INIS)

Pan, Tung-Ming; Huang, Ming-De

2011-01-01

Highlights: → We report the structural properties and sensing characteristics of Ho 2 O 3 sensing membranes deposited on Si substrates by reactive sputtering. → We applied X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy to study the structural and morphological features of these films after they had been subjected to annealing at various temperatures (700 deg. C, 800 deg. C, and 900 deg. C). → The Ho 2 O 3 electrolyte-insulator-semiconductor device annealed at 800 deg. C exhibited a higher sensitivity, a lower hysteresis voltage, and a smaller drift rate than other annealing temperatures. - Abstract: In this study, we report a Ho 2 O 3 electrolyte-insulator-semiconductor (EIS) device films deposited on Si substrates through reactive sputtering. The effect of thermal annealing (700, 800, and 900 deg. C) on the structural and surface properties of Ho 2 O 3 sensing film was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. We found that the EIS device with a Ho 2 O 3 sensing film annealed at 800 deg. C exhibited a higher sensitivity of ∼57 mV/pH, a lower hysteresis voltage of 2.68 mV, and a smaller drift rate of 2.83 mV h -1 compared to those at other annealing conditions. This improvement can be attributed to the well-crystallized Ho 2 O 3 structure and the large surface roughness.

A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory

Science.gov (United States)

Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme M.; Da Silva, Juarez L. F.

2018-02-01

Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal footing, is due to the unphysical self-interaction problem that mainly affects the band gap and spin-orbit splitting (SOC) in semiconductors and, in particular, III-V systems with similar magnitude of the band gap and SOC. In this work, we report a consistent study of the structural and electronic properties of the III-V semiconductors by using the screening hybrid-density functional theory framework, by fitting the α parameters for 12 different III-V compounds, namely, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb, to minimize the deviation between the theoretical and experimental values of the band gap and SOC. Structural relaxation effects were also included. Except for AlP, whose α = 0.127, we obtained α values that ranged from 0.209 to 0.343, which deviate by less than 0.1 from the universal value of 0.25. Our results for the lattice parameter and elastic constants indicate that the fitting of α does not affect those structural parameters when compared with the HSE06 functional, where α = 0.25. Our analysis of the band structure based on the k ṡ p method shows that the effective masses are in agreement with the experimental values, which can be attributed to the simultaneous fitting of the band gap and SOC. Also, we estimate the values of g-factors, extracted directly from the band structure, which are close to experimental results, which indicate that the obtained band structure produced a realistic set of k ṡ p parameters.

Design and exploration of semiconductors from first principles: A review of recent advances

Science.gov (United States)

Oba, Fumiyasu; Kumagai, Yu

2018-06-01

Recent first-principles approaches to semiconductors are reviewed, with an emphasis on theoretical insight into emerging materials and in silico exploration of as-yet-unreported materials. As relevant theory and methodologies have developed, along with computer performance, it is now feasible to predict a variety of material properties ab initio at the practical level of accuracy required for detailed understanding and elaborate design of semiconductors; these material properties include (i) fundamental bulk properties such as band gaps, effective masses, dielectric constants, and optical absorption coefficients; (ii) the properties of point defects, including native defects, residual impurities, and dopants, such as donor, acceptor, and deep-trap levels, and formation energies, which determine the carrier type and density; and (iii) absolute and relative band positions, including ionization potentials and electron affinities at semiconductor surfaces, band offsets at heterointerfaces between dissimilar semiconductors, and Schottky barrier heights at metal–semiconductor interfaces, which are often discussed systematically using band alignment or lineup diagrams. These predictions from first principles have made it possible to elucidate the characteristics of semiconductors used in industry, including group III–V compounds such as GaN, GaP, and GaAs and their alloys with related Al and In compounds; amorphous oxides, represented by In–Ga–Zn–O transparent conductive oxides (TCOs), represented by In2O3, SnO2, and ZnO; and photovoltaic absorber and buffer layer materials such as CdTe and CdS among group II–VI compounds and chalcopyrite CuInSe2, CuGaSe2, and CuIn1‑ x Ga x Se2 (CIGS) alloys, in addition to the prototypical elemental semiconductors Si and Ge. Semiconductors attracting renewed or emerging interest have also been investigated, for instance, divalent tin compounds, including SnO and SnS; wurtzite-derived ternary compounds such as ZnSnN2 and Cu

Analysis of optical properties of strained semiconductor quantum dots for electromagnetically induced transparency

DEFF Research Database (Denmark)

Barettin, D.; Houmark-Nielsen, Jakob; Lassen, B.

2010-01-01

different k*p band structure models. In addition to the separation of the heavy and light holes due to the biaxial strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band mixing effects. We furthermore find a non......Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and identify an optimal height and size for efficient EIT...... operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four...

An effective pair potential for liquid semiconductor, Se: Structure and ...

Indian Academy of Sciences (India)

This model potential is then used to describe through low-order perturbation theory, the structure and related dynamical properties like self-diffusion coefficient and shear viscosity of this complex liquid over a wide range of temperatures. Keywords. Liquid semiconductor; pair potential; structure and dynamical properties.

2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

Energy Technology Data Exchange (ETDEWEB)

Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)

2012-08-17

The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

Amorphous Semiconductors: From Photocatalyst to Computer Memory

Science.gov (United States)

Sundararajan, Mayur

encouraging but inconclusive. Then the method was successfully demonstrated on mesoporous TiO2SiO 2 by showing a shift in its optical bandgap. One of the special class of amorphous semiconductors is chalcogenide glasses, which exhibit high ionic conductivity even at room temperature. When metal doped chalcogenide glasses are under an electric field, they become electronically conductive. These properties are exploited in the computer memory storage application of Conductive Bridging Random Access Memory (CBRAM). CBRAM is a non-volatile memory that is a strong contender to replace conventional volatile RAMs such as DRAM, SRAM, etc. This technology has already been commercialized, but the working mechanism is still not clearly understood especially the nature of the conductive bridge filament. In this project, the CBRAM memory cells are fabricated by thermal evaporation method with Agx(GeSe 2)1-x as the solid electrolyte layer, Ag as the active electrode and Au as the inert electrode. By careful use of cyclic voltammetry, the conductive filaments were grown on the surface and the bulk of the solid electrolyte. The comparison between the two filaments revealed major differences leading to contradiction with the existing working mechanism. After compiling all the results, a modified working mechanism is proposed. SAXS is a powerful tool to characterize nanostructure of glasses. The analysis of the SAXS data to get useful information are usually performed by different programs. In this project, Irena and GIFT programs were compared by performing the analysis of the SAXS data of glass and glass ceramics samples. Irena was shown to be not suitable for the analysis of SAXS data that has a significant contribution from interparticle interactions. GIFT was demonstrated to be better suited for such analysis. Additionally, the results obtained by programs for samples with low interparticle interactions were shown to be consistent.

Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE

Science.gov (United States)

Nattermann, L.; Ludewig, P.; Sterzer, E.; Volz, K.

2017-07-01

Bi containing III/V semiconductors are frequently mentioned for their importance as part of the next generation of optoelectronic devices. Bi containing ternary and quaternary materials like Ga(AsBi), Ga(NAsBi) or Ga(PAsBi) are promising candidates to meet the requirements for new laser structures for telecommunications and solar cell applications. However, in previous studies it was determined that the incorporation of sufficient amounts of Bi still poses a challenge, especially when using MOVPE (metalorganic vapour phase epitaxy) as the growth technique. In order to figure out which mechanisms are responsible for the limitation of Bi incorporation, this work deals with the question of whether there is a relationship between strain, induced by the large Bi atoms, and the saturation level of Bi incorporation in Ga(AsBi). Ga(NAsBi) structures were grown by MOVPE at a low temperature, 400 °C, and compared to Ga(PAsBi) as well as Ga(AsBi) growth. By using the two group V atoms P and N, which have a smaller covalent radius than Bi, the effect of local strain compensation was investigated systematically. The comparison of Bi incorporation in the two quaternary materials systems proved the importance of local strain for the limitation of Bi incorporation, in addition to other effects, like Bi surface coverage and hydrocarbon groups at the growth surface. This, of course, also opens up ways to strain-state-engineer the Bi incorporation in semiconductor alloys.

Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

International Nuclear Information System (INIS)

Filippov, V. V.; Bormontov, E. N.

2013-01-01

A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material’s anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors

Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

Energy Technology Data Exchange (ETDEWEB)

Filippov, V. V., E-mail: wwfilippow@mail.ru [Lipetsk State Pedagogical University (Russian Federation); Bormontov, E. N. [Voronezh State University (Russian Federation)

2013-07-15

A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends

Science.gov (United States)

Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

2016-01-01

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed. PMID:28773772

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Science.gov (United States)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Tuning polarity and improving charge transport in organic semiconductors

Science.gov (United States)

Oh, Joon Hak; Han, A.-Reum; Yu, Hojeong; Lee, Eun Kwang; Jang, Moon Jeong

2013-09-01

Although state-of-the-art ambipolar polymer semiconductors have been extensively reported in recent years, highperformance ambipolar polymers with tunable dominant polarity are still required to realize on-demand, target-specific, high-performance organic circuitry. Herein, dithienyl-diketopyrrolopyrrole (TDPP)-based polymer semiconductors with engineered side-chains have been synthesized, characterized and employed in ambipolar organic field-effect transistors, in order to achieve controllable and improved electrical properties. Thermally removable tert-butoxycarbonyl (t-BOC) groups and hybrid siloxane-solubilizing groups are introduced as the solubilizing groups, and they are found to enable the tunable dominant polarity and the enhanced ambipolar performance, respectively. Such outstanding performance based on our molecular design strategies makes these ambipolar polymer semiconductors highly promising for low-cost, large-area, and flexible electronics.

Synthesis and spectroscopic properties of silica-dye-semiconductor nanocrystal hybrid particles.

Science.gov (United States)

Ren, Ting; Erker, Wolfgang; Basché, Thomas; Schärtl, Wolfgang

2010-12-07

We prepared silica-dye-nanocrystal hybrid particles and studied the energy transfer from semiconductor nanocrystals (= donor) to organic dye molecules (= acceptor). Multishell CdSe/CdS/ZnS semiconductor nanocrystals were adsorbed onto monodisperse Stöber silica particles with an outer silica shell of thickness 2-23 nm containing organic dye molecules (Texas Red). The thickness of this dye layer has a strong effect on the energy transfer efficiency, which is explained by the increase in the number of dye molecules homogeneously distributed within the silica shell, in combination with an enhanced surface adsorption of nanocrystals with increasing dye amount. Our conclusions were underlined by comparison of the experimental results with numerically calculated FRET efficiencies and by control experiments confirming attractive interaction between the nanocrystals and Texas Red freely dissolved in solution.

Simulation and Performance Test Technology Development for Semiconductor Radiation Detection Instrument Fabrication

International Nuclear Information System (INIS)

Kim, Jong Kyung; Lee, W. G.; Kim, S. Y.; Shin, C. H.; Kim, K. O.; Park, J. M.; Jang, D. Y.; Kang, J. S.

2010-06-01

- Analysis on the Absorbed Dose and Electron Generation by Using MCNPX Code - Analysis on the Change of Measured Energy Spectrum As a Function of Bias Voltage Applied in Semiconductor Detector - Comparison of Monte Carlo Simulation Considering the Charge Collection Efficiency and Experimental Result - Development of Semiconductor Sensor Design Code Based on the Graphic User Interface - Analysis on Depth Profile of Ion-implanted Semiconductor Wafer Surface and Naturally Generated SiO2 Insulation Layer Using Auger Electron Spectroscopy - Measurement of AFM Images and Roughness to Abalyze Surface of Semiconductor Wafer with respect to Annealing and Cleaning Process - Measurement of Physical Properties for Semiconductor Detector Surface after CZT Passivation Process - Evaluation of Crystal Structure and Specific Resistance of CZT - Measurement/Analysis on Band Structure of CZT Crystal - Evaluation of Neutron Convertor Layer with respect to Change in Temperature - Measurement/Evaluation of physical characteristics for lattice parameter, specific resistance, and band structure of CZT crystal - Measurement/Evaluation of lattice transition of SiC semiconductor detector after radiation irradiation - Measurement/Evaluation of performance of semiconductor detector with respect to exposure in high temperature environment

Programmable and coherent crystallization of semiconductors

KAUST Repository

Yu, Liyang

2017-03-04

The functional properties and technological utility of polycrystalline materials are largely determined by the structure, geometry, and spatial distribution of their multitude of crystals. However, crystallization is seeded through stochastic and incoherent nucleation events, limiting the ability to control or pattern the microstructure, texture, and functional properties of polycrystalline materials. We present a universal approach that can program the microstructure of materials through the coherent seeding of otherwise stochastic homogeneous nucleation events. The method relies on creating topographic variations to seed nucleation and growth at designated locations while delaying nucleation elsewhere. Each seed can thus produce a coherent growth front of crystallization with a geometry designated by the shape and arrangement of seeds. Periodic and aperiodic crystalline arrays of functional materials, such as semiconductors, can thus be created on demand and with unprecedented sophistication and ease by patterning the location and shape of the seeds. This approach is used to demonstrate printed arrays of organic thin-film transistors with remarkable performance and reproducibility owing to their demonstrated spatial control over the microstructure of organic and inorganic polycrystalline semiconductors.

Spectra of magnetoplasma polaritons in a semiconductor layer on a metallic substrate

International Nuclear Information System (INIS)

Beletsekii, N.N.; Gasan, E.A.; Yakovenko, V.M.

1988-01-01

The dispersion properties of volume and surface magnetoplasma polaritons in a three-layer metal-semiconductor-insulator structure are studied. It is predicted that surface magnetoplasma polaritons propagating on the two boundaries of the semiconductor layer interact resonantly. It is shown that for a certain direction of propagation the dispersion curves of surface and volume magnetoplasma polaritons contain sections with negative dispersion. Nonreciprocal propagation of volume magnetoplasma polaritons has been observed. Losses in the semiconductor layer split the starting spectral lines into dispersion curves of two types, corresponding to forward and backward waves

Retraction of “Accurate Prediction of Essential Fundamental Properties for Semiconductors Used in Solar-Energy Conversion Devices from Range-Separated Hybrid Density Functional Theory”

KAUST Repository

Harb, Moussab

2016-03-08

The author retracts this article due to similarities with a previously published article by Le Bahers, T.; Rerat, M.; Sautet, ́ P. Semiconductors Used in Photovoltaic and Photocatalytic Devices: Assessing Fundamental Properties from DFT. J. Phys. Chem. C 2014, 118 (12), 5997−6008 (DOI: 10.1021/jp409724c).

Vacancy induced half-metallicity in half-Heusler semiconductors

KAUST Repository

Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlö gl, Udo

2011-01-01

First-principles calculations are performed to investigate the effect of vacancies on the electronic structure and magnetic properties of the two prototypical half-Heusler semiconductors NiTiSn and CoTiSb. The spin degeneracy of the host materials

Electronic, elastic and optical properties of ZnGeP{sub 2} semiconductor under hydrostatic pressures

Energy Technology Data Exchange (ETDEWEB)

Tripathy, S.K.; Kumar, V., E-mail: vkumar52@hotmail.com

2014-03-15

The electronic, elastic and optical properties of zinc germanium phosphide, ZnGeP{sub 2}, semiconductor have been studied using local density approximation (LDA) method within the density functional theory (DFT). The lattice constants (a and c), band structure, density of states (DOS), bulk modulus (B) and pressure derivative of bulk modulus (B′) have been discussed. The value of pseudo-direct band gap (E{sub g}) at Γ point has been calculated. The pressure dependences of elastic stiffness coefficients (C{sub ij}), Zener anisotropy factor (A), Poisson's ratio (ν), Young modulus (Y) and shear modulus (G) have also been calculated. The ratio of B/G shows that that ZnGeP{sub 2} is ductile in nature. The optical properties have been discussed in detail under three different pressures in the energy range 0–22 eV. The calculated values of all parameters are compared with the available experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.

The Electrical Characteristics of The N-Organic Semiconductor/P-Inorganic Semiconductor Diode

International Nuclear Information System (INIS)

Aydin, M. E.

2008-01-01

n-organic semiconductor (PEDOT) / p-inorganic semiconductor Si diode was formed by deep coating method. The method has been achieved by coating n-inorganic semiconductor PEDOT on top of p-inorganic semiconductor. The n-organic semiconductor PEDOT/ p-inorganic semiconductor diode demonstrated rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The barrier height , ideality factor values were obtained as of 0.88 eV and 1.95 respectively. The diode showed non-ideal I-V behavior with an ideality factor greater than unity that could be ascribed to the interfacial layer

Propagation and collision of soliton rings in quantum semiconductor plasmas

International Nuclear Information System (INIS)

El-Shamy, E.F.; Gohman, F.S.

2014-01-01

The intrinsic localization of electrostatic wave energies in quantum semiconductor plasmas can be described by solitary pulses. The collision properties of these pulses are investigated. In the present study, the fundamental model includes the quantum term, degenerate pressure of the plasma species, and the electron/hole exchange–correlation effects. In cylindrical geometry, using the extended Poincaré–Lighthill–Kuo (PLK) method, the Korteweg–de Vries (KdV) equations and the analytical phase shifts after the collision of two soliton rings are derived. Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. In addition, the degenerate pressure terms of electrons and holes have strong impact on the phase shift. The present theory may be useful to analyze the collision of localized coherent electrostatic waves in quantum semiconductor plasmas. - Highlights: • The propagation and the collision of pulses in quantum semiconductor plasmas are studied. • Numerical calculations reveal that pulses may exist only in dark soliton rings for electron–hole quantum plasmas. • Typical values for GaSb and GaN semiconductors are used to estimate the basic features of soliton rings. • It is found that the pulses of GaSb semiconductor carry more energies than the pulses of GaN semiconductor. • The degenerate pressure terms of electrons and holes have strong impact on the phase shift

Consensual exploitation : the moral wrong in exploitation and legal restrictions on consensual exploitative transactions

OpenAIRE

van der Neut, Wendy

2014-01-01

This thesis is about so-­‐called consensual exploitative transactions: transactions to which all parties agree voluntarily, and which are beneficial for all parties, but which are still widely considered exploitative, and for that reason legally restricted in many countries. The thesis asks two main questions: 1. What is wrong with consensual exploitation? 2.What implications does the answer to this question have for the legal restriction of consensual transactions ...

Electron emission from individual indium arsenide semiconductor nanowires

NARCIS (Netherlands)

Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

2007-01-01

A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

International Nuclear Information System (INIS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-01-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

Accuracy of dielectric-dependent hybrid functionals in the prediction of optoelectronic properties of metal oxide semiconductors: a comprehensive comparison with many-body GW and experiments

Science.gov (United States)

Gerosa, M.; E Bottani, C.; Di Valentin, C.; Onida, G.; Pacchioni, G.

2018-01-01

Understanding the electronic structure of metal oxide semiconductors is crucial to their numerous technological applications, such as photoelectrochemical water splitting and solar cells. The needed experimental and theoretical knowledge goes beyond that of pristine bulk crystals, and must include the effects of surfaces and interfaces, as well as those due to the presence of intrinsic defects (e.g. oxygen vacancies), or dopants for band engineering. In this review, we present an account of the recent efforts in predicting and understanding the optoelectronic properties of oxides using ab initio theoretical methods. In particular, we discuss the performance of recently developed dielectric-dependent hybrid functionals, providing a comparison against the results of many-body GW calculations, including G 0 W 0 as well as more refined approaches, such as quasiparticle self-consistent GW. We summarize results in the recent literature for the band gap, the band level alignment at surfaces, and optical transition energies in defective oxides, including wide gap oxide semiconductors and transition metal oxides. Correlated transition metal oxides are also discussed. For each method, we describe successes and drawbacks, emphasizing the challenges faced by the development of improved theoretical approaches. The theoretical section is preceded by a critical overview of the main experimental techniques needed to characterize the optoelectronic properties of semiconductors, including absorption and reflection spectroscopy, photoemission, and scanning tunneling spectroscopy (STS).

Semiconductor Physical Electronics

CERN Document Server

Li, Sheng

2006-01-01

Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

Parameterization of the dielectric function of semiconductor nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Petrik, P., E-mail: petrik@mfa.kfki.hu

2014-11-15

Optical methods like spectroscopic ellipsometry are sensitive to the structural properties of semiconductor films such as crystallinity or grain size. The imaginary part of the dielectric function is proportional to the joint density of electronic states. Consequently, the analysis of the dielectric function around the critical point energies provides useful information about the electron band structure and all related parameters like the grain structure, band gap, temperature, composition, phase structure, and carrier mobility. In this work an attempt is made to present a selection of the approaches to parameterize and analyze the dielectric function of semiconductors, as well as some applications.

Two dimensional tunable photonic crystals and n doped semiconductor materials

International Nuclear Information System (INIS)

Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

2015-01-01

In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

Designing Selectivity in Metal-Semiconductor Nanocrystals: Synthesis, Characterization, and Self-Assembly

Science.gov (United States)

Pavlopoulos, Nicholas George

This dissertation contains six chapters detailing recent advances that have been made in the synthesis and characterization of metal-semiconductor hybrid nanocrystals (HNCs), and the applications of these materials. Primarily focused on the synthesis of well-defined II-VI semiconductor nanorod (NR) and tetrapod (TP) based constructs of interest for photocatalytic and solar energy applications, the research described herein discusses progress towards the realization of key design rules for the synthesis of functional semiconductor nanocrystals (NCs). As such, a blend of novel synthesis, advanced characterization, and direct application of heterostructured nanoparticles are presented. The first chapter is a review summarizing the design, synthesis, properties, and applications of multicomponent nanomaterials composed of disparate semiconductor and metal domains. By coupling two compositionally distinct materials onto a single nanocrystal, synergistic properties can arise that are not present in the isolated components, ranging from self-assembly to photocatalysis. For semiconductor nanomaterials, this was first realized in the ability to tune nanomaterial dimensions from 0-D quantum dot (QD) structures to cylindrical (NR) and branched (TP) structures by exploitation of advanced colloidal synthesis techniques and understandings of NC facet reactivities. The second chapter is focused on the synthesis and characterization of well-defined CdSe-seeded-CdS (CdSe CdS) NR systems synthesized by overcoating of wurtzite (W) CdSe quantum dots with W-CdS shells. 1-dimensional NRs have been interesting constructs for applications such as solar concentrators, optical gains, and photocatalysis. Through synthetic control over CdSe CdS NR systems, materials with small and large CdSe seeds were prepared, and for each seed size, multiple NR lengths were prepared. Through transient absorption studies, it was found that band alignment did not affect the efficiency of charge localization

Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

International Nuclear Information System (INIS)

Mario Agio

2002-01-01

This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser

Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals

Energy Technology Data Exchange (ETDEWEB)

Agio, Mario [Iowa State Univ., Ames, IA (United States)

2002-12-31

This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface reflectance proves the existence of selection rules for coupling an external wave to a certain photonic mode. Such rules can be directly derived from symmetry considerations. Lastly, the control of wave propagation in weak-index contrast photonic-crystal slabs is tackled in view of designing building blocks for photonic integrated circuits. The proposed designs are found to comply with the major requirements of low-loss propagation, high and single-mode transmission. These notions are then collected to model a photonic-crystal combiner for an integrated multi-wavelength-source laser.

Non-markovian effects in semiconductor cavity QED: Role of phonon-mediated processes

DEFF Research Database (Denmark)

Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from the pola......We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from...... the polaritonic quasi-particle nature of the carrier-photon system interacting with the phonon reservoir....

Semiconductor Mode-Locked Lasers for Optical Communication Systems

DEFF Research Database (Denmark)

Yvind, Kresten

2003-01-01

The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

1/f Fluctuations in ion implanted metal semiconductor contacts

International Nuclear Information System (INIS)

Stojanovic, M.; Marjanovic, N.; Radojevic, B.

1998-01-01

Ion implanted Metal-Semiconductor contacts is the most widely used structures in electrical devices. Weather complete devices or some parts are of interest, properties of metal-semiconductor junction strongly influence the quality and external characteristic of electronic devices. That is the reason why special attention is paid to the investigation of factor (noise for example) that could influence given junction. Low frequency 1/f fluctuations (noise) are constantly present in metal-semiconductor junction, so measurement of their level as well as the dependence on factors such as temperature must be taken into account in detailed analysis of electrical characteristics of devices such as contact, nuclear detector with surface barrier etc. In this paper we present the results of low frequency noise level measurements on TiN-Ti-Si structures produced by As + ion implantation. (author)

Molecular fingerprints in the electronic properties of crystalline organic semiconductors

DEFF Research Database (Denmark)

Ciuchi, S.; Hatch, R.C.; Höchst, H.

2012-01-01

bands can be achieved in organic semiconductors provided that one properly accounts for the coupling to molecular vibrational modes and the presence of disorder. Our findings rationalize the growing experimental evidence that even the best band structure theories based on a many-body treatment...... of electronic interactions cannot reproduce the experimental photoemission data in this important class of materials....

Effects of Coupling Lens on Optical Refrigeration of Semiconductors

International Nuclear Information System (INIS)

Kai, Ding; Yi-Ping, Zeng

2008-01-01

Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Spectroscopic characterization of III-V semiconductor nanomaterials

Science.gov (United States)

Crankshaw, Shanna Marie

III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

Defects and diffusion in semiconductors XIV

CERN Document Server

Fisher, David J

2012-01-01

This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and

Problems and progress in radiation physics of semiconductors

International Nuclear Information System (INIS)

Vinetskij, V.L.

1982-01-01

A survey of the current status of radiation physics of semiconductors comprises the analysis of some new problems and poses the statement of concern. The essential difference between the probability of interstitial-vacancy pair occurrence W(T) in elastic collisions and the generally accepted step distribution with a typical ''threshold'' energy Tsub(d) is indicated. The role of diffusion and reaction evolution of primary defects leading to specific properties of the cluster formation process is shown. Special features of defect formation in spatially inhomogeneous semiconductors, in particular for elastic stresses present, are described. Among most important advances in the radiation physics of semiconductors there are the discovery of non-activation motion of the ''extra'' atom in silicon, the observation of a low activation energy value for the vacancy diffusion, the understanding of subthreshold mechanism of defect formation and radiation-induced diffusion, the effects of laser annealing of defects and oriented crystallization

Compound Semiconductor Radiation Detector

International Nuclear Information System (INIS)

Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

2005-01-01

In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

Solid spectroscopy: semiconductors

International Nuclear Information System (INIS)

Silva, C.E.T.G. da

1983-01-01

Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

NARCIS (Netherlands)

2008-01-01

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

Evidence for molecular N2 bubble formation in a (Ga,Fe)N magnetic semiconductor

DEFF Research Database (Denmark)

Kovács, András; Schaffer, B.; Moreno, M. S.

2011-01-01

Fe-doped GaN semiconductors are of interest for combining the properties of semiconductors and magnetic materials [1]. Depending on the growth temperature used, Fe can either be distributed homogenously in the GaN host lattice or it can accumulate in the form of Fe-N nanocrystals. As a result of ...

Dielectric function of semiconductor superlattice

International Nuclear Information System (INIS)

Qin Guoyi.

1990-08-01

We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

Ultrafast Dynamics of Quantum-Dot Semiconductor Optical Amplifiers

DEFF Research Database (Denmark)

Poel, Mike van der; Hvam, Jørn Märcher

2007-01-01

We report on a series of experiments on the dynamical properties of quantum-dot semiconductor optical amplifiers. We show how the amplifier responds to one or several ultrafast (170 fs) pulses in rapid succession and our results demonstrate applicability and ultimate limitations to application...

Two-Dimensional Charge Transport in Disordered Organic Semiconductors

NARCIS (Netherlands)

Brondijk, J. J.; Roelofs, W. S. C.; Mathijssen, S. G. J.; Shehu, A.; Cramer, T.; Biscarini, F.; Blom, P. W. M.; de Leeuw, D. M.

2012-01-01

We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides

Testing of defects in Si semiconductor apparatus by using single-photon detection

International Nuclear Information System (INIS)

Zhongliang, Pan; Ling, Chen; Guangju, Chen

2013-01-01

The failure analysis of semiconductor apparatus is very needed for ensuring product quality, which can find several types of defects in the semiconductor apparatus. A new testing method for the defects in Si semiconductor apparatus is presented in this paper, the method makes use of photon emissions to find out the failure positions or failure components by taking advantage of the infrared photo emission characteristics of semiconductor apparatus. These emitted photons carry the information of the apparatus structure. If there are defects in the apparatus, these photons can help in understanding the apparatus properties and detecting the defects. An algorithm for the generation of circuit input vectors are presented in this paper to enhance the strength of the emitted photons for the given components in the semiconductor apparatus. The multiple-valued logic, the static timing analysis and path sensitizations, are used in the algorithm. A lot of experimental results for the Si semiconductor apparatus show that many types of defects such as contact spiking and latchup failure etc., can be detected accurately by the method proposed in this paper

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji-Won; Rondinone, Adam Justin; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

2017-09-19

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

Science.gov (United States)

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

2014-06-24

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

Plastic Deformation as a Means to Achieve Stretchable Polymer Semiconductors

Science.gov (United States)

O'Connor, Brendan

Developing intrinsically stretchable semiconductors will seamlessly transition traditional devices into a stretchable platform. Polymer semiconductors are inherently soft materials due to the weak van der Waal intermolecular bonding allowing for flexible devices. However, these materials are not typically stretchable and when large strains are applied they either crack or plastically deform. Here, we study the use of repeated plastic deformation as a means of achieving stretchable films. In this talk, critical aspects of polymer semiconductor material selection, morphology and interface properties will be discussed that enable this approach of achieving stretchable films. We show that one can employ high performance donor-acceptor polymer semiconductors that are typically brittle through proper polymer blending to significantly increase ductility to achieve stretchable films. We demonstrate a polymer blend film that can be repeatedly deformed over 65%, while maintaining charge mobility consistently above 0.15 cm2/Vs. During the stretching process we show that the films follow a well-controlled repeated deformation pattern for over 100 stretching cycles.

Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

Directory of Open Access Journals (Sweden)

Stanković Koviljka

2009-01-01

Full Text Available The wide-spread use of semiconductor and gas-filled diodes for non-linear over-voltage protection results in a variety of possible working conditions. It is therefore essential to have a thorough insight into their reliability in exploitation environments which imply exposure to ionizing radiation. The aim of this paper is to investigate the influence of irradiation on over-voltage diode characteristics by exposing the diodes to californium-252 combined neutron/gamma radiation field. The irradiation of semiconductor over-voltage diodes causes severe degradation of their protection characteristics. On the other hand, gas-filled over-voltage diodes exhibit a temporal improvement of performance. The results are presented with the accompanying theoretical interpretations of the observed changes in over-voltage diode behaviour, based on the interaction of radiation with materials constituting the diodes.

The structural, elastic, electronic and dynamical properties of chalcopyrite semiconductor BeGeAs{sub 2} from first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Ciftci, Yasemin Oe. [Gazi University Teknikokullar, Department of Physics, Faculty of Sciences, Ankara (Turkey); Evecen, Meryem; Aldirmaz, Emine [Amasya University, Department of Physics, Faculty of Arts and Sciences, Amasya (Turkey)

2017-01-15

First-principles calculations for the structural, elastic, electronic and vibrational properties of BeGeAs{sub 2} with chalcopyrite structure have been reported in the frame work of the density functional theory. The calculated ground state properties are in good agreement with the available data. By considering the electronic band structure and electronic density of states calculation, it is found that this compound is a semiconductor which confirmed the previous work. Single-crystal elastic constants and related properties such as Young's modulus, Poisson ratio, shear modulus and bulk modulus have been predicted using the stress-finite strain technique. It can be seen from the calculated elastic constants that this compound is mechanically stable in the chalcopyrite structure. Pressure dependences of elastic constants and band gap are also reported. Finally, the phonon dispersion curves and total and partial density of states were calculated and discussed. The calculated phonon frequencies BeGeAs{sub 2} are positive, indicating the dynamical stability of the studied compound. (orig.)

Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

Science.gov (United States)

Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

2014-01-01

The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

Comprehensive and fully self-consistent modeling of modern semiconductor lasers

International Nuclear Information System (INIS)

Nakwaski, W.; Sarzał, R. P.

2016-01-01

The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers depends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered conditions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-burning effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. (paper)

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

Science.gov (United States)

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

Science.gov (United States)

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Effect of Nuclear Reactions on the Properties of Al-Mg-Si Alloys after Long-Time Exploitation in Research Reactors

CERN Document Server

Hofmann, A; Szteke, W; Hajewska, E; Wagner, T; Semina, V K

2004-01-01

Effect of fast neutron ($E>$ 0.1~?eV) irradiation on the mechanical properties and fracture morphology of the Al-Mg-Si alloys (PAR-1 and ???-1) after 40 years of exploitation in research nuclear reactors has been studied. Tested specimens were cut from structural elements of reactor EWA ($\\acute{\\rm S}$wierk, Poland). Irradiation induces degradation in mechanical properties, namely yield strength and ultimate strength increase, but elongation reduces. The mechanical property changes are caused by ageing of Al--Mg--Si alloy. During irradiation Si is formed from Al by the Al($n, \\gamma $)Si reaction. The presence of Si might cause strengthening of the Al--Mg--Si alloys by increasing precipitation of Mg$_{2}$Si or pure Si in the Al matrix. Post-irradiation activity studies of EWA reactor structural elements show that the high-activity $^{60}$Co and $^{65}$Zn isotopes have been formed by the nuclear reactions.

Effect of nuclear reactions on the properties of Al-Mg-Si alloys after long-time exploitation in research reactors

International Nuclear Information System (INIS)

Hofman, A.; Didyk, A.Yu.; Semina, V.K.; Szteke, W.; Hajewska, E.; Wagner, T.

2004-01-01

Effect of fast neutron (E > 0.1 MeV) irradiation on the mechanical properties and fracture morphology of the Al-Mg-Si alloys (PAR-1 and CAB-1) after 40 years of exploitation in research nuclear reactors has been studied. Tested specimens were cut from structural elements of reactor EWA (Swierk, Poland). Irradiation induces degradation in mechanical properties, namely yield strength and ultimate strength increase, but elongation reduces. The mechanical property changes are caused by ageing of Al-Mg-Si alloys. During irradiation Si is formed from Al by the Al(n, γ)Si reaction. The presence of Si might cause strengthening of the Al-Mg-Si alloys by increasing precipitation of Mg 2 Si or pure Si in the Al matrix. Post-irradiation activity studies of EWA reactor structural elements show that the high-activity 60 Co and 65 Zn isotopes have been formed by the nuclear reactions

Barrier height enhancement of metal/semiconductor contact by an enzyme biofilm interlayer

Science.gov (United States)

Ocak, Yusuf Selim; Gul Guven, Reyhan; Tombak, Ahmet; Kilicoglu, Tahsin; Guven, Kemal; Dogru, Mehmet

2013-06-01

A metal/interlayer/semiconductor (Al/enzyme/p-Si) MIS device was fabricated using α-amylase enzyme as a thin biofilm interlayer. It was observed that the device showed an excellent rectifying behavior and the barrier height value of 0.78 eV for Al/α-amylase/p-Si was meaningfully larger than the one of 0.58 eV for conventional Al/p-Si metal/semiconductor (MS) contact. Enhancement of the interfacial potential barrier of Al/p-Si MS diode was realized using enzyme interlayer by influencing the space charge region of Si semiconductor. The electrical properties of the structure were executed by the help of current-voltage and capacitance-voltage measurements. The photovoltaic properties of the structure were executed under a solar simulator with AM1.5 global filter between 40 and 100 mW/cm2 illumination conditions. It was also reported that the α-amylase enzyme produced from Bacillus licheniformis had a 3.65 eV band gap value obtained from optical method.

Onset of itinerant ferromagnetism associated with semiconductor ...

Indian Academy of Sciences (India)

In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

Positron studies of metal-oxide-semiconductor structures

Science.gov (United States)

Au, H. L.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

1993-03-01

Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

Method of manufacturing a semiconductor sensor device and semiconductor sensor device

NARCIS (Netherlands)

2009-01-01

The invention relates to a method of manufacturing a semiconductor sensor device (10) for sensing a substance comprising a plurality of mutually parallel mesa-shaped semiconductor regions (1) which are formed on a surface of a semiconductor body (11) and which are connected at a first end to a first

A Novel Defect Inspection Method for Semiconductor Wafer Based on Magneto-Optic Imaging

Science.gov (United States)

Pan, Z.; Chen, L.; Li, W.; Zhang, G.; Wu, P.

2013-03-01

The defects of semiconductor wafer may be generated from the manufacturing processes. A novel defect inspection method of semiconductor wafer is presented in this paper. The method is based on magneto-optic imaging, which involves inducing eddy current into the wafer under test, and detecting the magnetic flux associated with eddy current distribution in the wafer by exploiting the Faraday rotation effect. The magneto-optic image being generated may contain some noises that degrade the overall image quality, therefore, in this paper, in order to remove the unwanted noise present in the magneto-optic image, the image enhancement approach using multi-scale wavelet is presented, and the image segmentation approach based on the integration of watershed algorithm and clustering strategy is given. The experimental results show that many types of defects in wafer such as hole and scratch etc. can be detected by the method proposed in this paper.

Flexible photonic-crystal Fano filters based on transferred semiconductor nanomembranes

Energy Technology Data Exchange (ETDEWEB)

Zhou Weidong; Yang Hongjun; Qiang Zexuan; Chen Li; Yang Weiquan; Chuwongin, Santhad; Zhao Deyin [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, TX 76019 (United States); Ma Zhenqiang; Qin Guoxuan; Pang Huiqing, E-mail: wzhou@uta.ed, E-mail: mazq@engr.wisc.ed [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI 53706 (United States)

2009-12-07

Crystalline semiconductor nanomembranes (NMs), which are transferable, stackable, bondable and manufacturable, offer unprecedented opportunities for unique and novel device applications. We report and review here nanophotonic devices based on stacked semiconductor NMs that were built on Si, glass and flexible PET substrates. Photonic-crystal Fano resonance based surface-normal optical filters and broadband reflectors have been demonstrated with unique angle and polarization properties. Such a low temperature NM stacking process can lead to a paradigm shift on silicon photonic integration and inorganic flexible photonics.

Measuring the Edge Recombination Velocity of Monolayer Semiconductors.

Science.gov (United States)

Zhao, Peida; Amani, Matin; Lien, Der-Hsien; Ahn, Geun Ho; Kiriya, Daisuke; Mastandrea, James P; Ager, Joel W; Yablonovitch, Eli; Chrzan, Daryl C; Javey, Ali

2017-09-13

Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing this material for high performance electronic and optoelectronic devices. WS 2 monolayers patterned into disks of varying diameters are used to experimentally explore the influence of edges on the material's optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τ effective , as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on nonradiative carrier recombination. The unpassivated WS 2 monolayer disks yield an ERV ∼ 4 × 10 4 cm/s. This work quantifies the nonradiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization approach that can be used to experimentally explore edge passivation methods for 2D materials.

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Directory of Open Access Journals (Sweden)

Bingqi Sun

2018-06-01

Full Text Available Two-dimensional (2D semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal–oxide–semiconductor (CMOS devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs, and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

Semiconductors put spin in spintronics

International Nuclear Information System (INIS)

Weiss, Dieter

2000-01-01

Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

Semiconductor statistics

CERN Document Server

Blakemore, J S

1987-01-01

In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

Calculations of quasi-particle spectra of semiconductors under pressure

DEFF Research Database (Denmark)

Christensen, Niels Egede; Svane, Axel; Cardona, M.

2011-01-01

Different approximations in calculations of electronic quasiparticle states in semiconductors are compared and evaluated with respect to their validity in predictions of optical properties. The quasi-particle self-consistent GW (QSGW) approach yields values of the band gaps which are close...

Tunable omnidirectional absorber and mode splitter based on semiconductor photonic crystal

International Nuclear Information System (INIS)

Ding, Guo-Wen; Liu, Shao-Bin; Zhang, Hai-Feng; Kong, Xiang-Kun; Li, Hai-Ming

2015-01-01

In this paper, the properties of one-dimensional (1D) photonic crystals (PCs) composed of the semiconductor (GaAs) and dielectric layers are theoretically investigated by the transfer matrix method (TMM). The absorption of semiconductor layers is investigated theoretically. Due to the magneto-optical Voigt effect, the dielectric constant of the semiconductor is modified differently in different modes and frequency ranges. If the frequency range of the incident wave is larger than the plasma frequency, TE and TM modes of the incident wave will be absorbed in a wide incident angle. TM wave will be absorbed but TE wave will be reflected while the frequency range is less than the plasma frequency. The absorption of semiconductor can also be tuned by varying the external magnetic field. The proposed PCs have a reconfigurable application to design a tunable omnidirectional absorber and mode splitter at same time

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Energy Technology Data Exchange (ETDEWEB)

Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

2015-06-15

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

Semiconductor quantum dots for bioimaging and biodiagnostic applications.

Science.gov (United States)

Kairdolf, Brad A; Smith, Andrew M; Stokes, Todd H; Wang, May D; Young, Andrew N; Nie, Shuming

2013-01-01

Semiconductor quantum dots (QDs) are light-emitting particles on the nanometer scale that have emerged as a new class of fluorescent labels for chemical analysis, molecular imaging, and biomedical diagnostics. Compared with traditional fluorescent probes, QDs have unique optical and electronic properties such as size-tunable light emission, narrow and symmetric emission spectra, and broad absorption spectra that enable the simultaneous excitation of multiple fluorescence colors. QDs are also considerably brighter and more resistant to photobleaching than are organic dyes and fluorescent proteins. These properties are well suited for dynamic imaging at the single-molecule level and for multiplexed biomedical diagnostics at ultrahigh sensitivity. Here, we discuss the fundamental properties of QDs; the development of next-generation QDs; and their applications in bioanalytical chemistry, dynamic cellular imaging, and medical diagnostics. For in vivo and clinical imaging, the potential toxicity of QDs remains a major concern. However, the toxic nature of cadmium-containing QDs is no longer a factor for in vitro diagnostics, so the use of multicolor QDs for molecular diagnostics and pathology is probably the most important and clinically relevant application for semiconductor QDs in the immediate future.

Majorana zero modes in superconductor-semiconductor heterostructures

Science.gov (United States)

Lutchyn, R. M.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Krogstrup, P.; Marcus, C. M.; Oreg, Y.

2018-05-01

Realizing topological superconductivity and Majorana zero modes in the laboratory is a major goal in condensed-matter physics. In this Review, we survey the current status of this rapidly developing field, focusing on proposals for the realization of topological superconductivity in semiconductor-superconductor heterostructures. We examine materials science progress in growing InAs and InSb semiconductor nanowires and characterizing these systems. We then discuss the observation of robust signatures of Majorana zero modes in recent experiments, paying particular attention to zero-bias tunnelling conduction measurements and Coulomb blockade experiments. We also outline several next-generation experiments probing exotic properties of Majorana zero modes, including fusion rules and non-Abelian exchange statistics. Finally, we discuss prospects for implementing Majorana-based topological quantum computation.

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Molecular and polymeric organic semiconductors for applications in photovoltaic devices

International Nuclear Information System (INIS)

Meinhardt, G.

2000-01-01

Photovoltaic devices based on molecular as well as polymeric semiconductors were investigated and characterized. The organic materials presented here exhibit the advantages of low price, low processing costs and the possibility of tuning their optical properties. The photovoltaic properties were investigated by photocurrent action spectroscopy and I/V-characterization and the electric field distribution in each layer by electroabsorption spectroscopy. Single layer devices of molecular semiconductors and semiconducting polymers like methyl-substituted polyparaphenylene, CN-Ether-PPV, copper-phthalocyanine, the terryleneimide DOTer, the perylene derivatives BBP-perylene and polyBBP-perylene show low photocurrents as well as a small photovoltaic effect in their pristine form. One way to enhance the performance is to blend the active layer with molecular dopands like a soluble form of titaniumoxophthalocyanine or the aromatic macromolecule RS19 or to combine two organic semiconductors in heterostructure devices. The motivation for these experiments was the optimization of either charge transfer or energy transfer from one molecule to its neighbor molecule. A model based on the internal filter effect was used for fitting the photoresponse of single layer devices. For optimising heterostructure solar cells a more sophisticated theoretical model taking into account interference effects was used. (author)

B₁₂P₂: Improved Epitaxial Growth and Evaluation of Alpha Irradiation on its Electrical Transport Properties

Energy Technology Data Exchange (ETDEWEB)

Frye, Clint D. [Kansas State Univ., Manhattan, KS (United States)

2016-10-17

The wide bandgap (3.35 eV) semiconductor icosahedral boron phosphide (B₁₂P₂) has been reported to self-heal from radiation damage from β particles (electrons) with energies up to 400 keV by demonstrating no lattice damage using transmission electron microscopy. This property could be exploited to create radioisotope batteries–semiconductor devices that directly convert the decay energy from a radioisotope to electricity. Such devices potentially have enormous power densities and decades-long lifetimes. To date, the radiation hardness of B₁₂P₂ has not been characterized by electrical measurements nor have B₁₂P₂ radioisotope batteries been realized. Therefore, this study was undertaken to evaluate the radiation hardness of B₁₂P₂ after improving its epitaxial growth, developing ohmic electrical contacts, and reducing the residual impurities. Subsequently, the effects of radiation from a radioisotope on the electrical transport properties of B₁₂P₂ were tested.

Elucidation of the structure-property relationship of p-type organic semiconductors through rapid library construction via a one-pot, Suzuki-Miyaura coupling reaction.

Science.gov (United States)

Fuse, Shinichiro; Matsumura, Keisuke; Wakamiya, Atsushi; Masui, Hisashi; Tanaka, Hiroshi; Yoshikawa, Susumu; Takahashi, Takashi

2014-09-08

The elucidation of the structure-property relationship is an important issue in the development of organic electronics. Combinatorial synthesis and the evaluation of systematically modified compounds is a powerful tool in the work of elucidating structure-property relationships. In this manuscript, D-π-A structure, 32 p-type organic semiconductors were rapidly synthesized via a one-pot, Suzuki-Miyaura coupling with subsequent Knoevenagel condensation. Evaluation of the solubility and photovoltaic properties of the prepared compounds revealed that the measured solubility was strongly correlated with the solubility parameter (SP), as reported by Fedors. In addition, the SPs were correlated with the Jsc of thin-film organic solar cells prepared using synthesized compounds. Among the evaluated photovoltaic properties of the solar cells, Jsc and Voc had strong correlations with the photoconversion efficiency (PCE).

Thermoelectric transport properties of high mobility organic semiconductors

Science.gov (United States)

Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

2016-09-01

Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

Concept Maps as Expressions of Teachers' Meaning-Making While Beginning to Teach Semiconductors

Science.gov (United States)

Rollnick, Marissa; Mundalamo, Fhatuwani; Booth, Shirley

2013-01-01

The challenge of teaching new subject matter is a familiar one for most teachers. This paper investigates the content knowledge gains made by seven teachers as they learn to teach the topic of semiconductors through a process of self-study. "Semiconductors" is a new topic in the curriculum which looks at the sub-microscopic properties of…

Steady-state photoconductivity and multi-particle interactions in high-mobility organic semiconductors.

Science.gov (United States)

Irkhin, P; Najafov, H; Podzorov, V

2015-10-19

Fundamental understanding of photocarrier generation, transport and recombination under a steady-state photoexcitation has been an important goal of organic electronics and photonics, since these processes govern such electronic properties of organic semiconductors as, for instance, photoconductivity. Here, we discovered that photoconductivity of a highly ordered organic semiconductor rubrene exhibits several distinct regimes, in which photocurrent as a function of cw (continuous wave) excitation intensity is described by a power law with exponents sequentially taking values 1, 1/3 and ¼. We show that in pristine crystals this photocurrent is generated at the very surface of the crystals, while the bulk photocurrent is drastically smaller and follows a different sequence of exponents, 1 and ½. We describe a simple experimental procedure, based on an application of "gauge effect" in high vacuum, that allows to disentangle the surface and bulk contributions to photoconductivity. A model based on singlet exciton fission, triplet fusion and triplet-charge quenching that can describe these non-trivial effects in photoconductivity of highly ordered organic semiconductors is proposed. Observation of these effects in photoconductivity and modeling of the underlying microscopic mechanisms described in this work represent a significant step forward in our understanding of electronic properties of organic semiconductors.

High-resolution photoluminescence studies of single semiconductor quantum dots

DEFF Research Database (Denmark)

Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

2000-01-01

Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...

Optical and optoelectronic properties of nanostructures based on wide-bandgap semiconductors

International Nuclear Information System (INIS)

Kalden, Joachim

2010-01-01

approach to achieve semiconductor waveguides is the growth of self assembled nanowires, as this kind of nanostructure possesses promising crystalline properties, and no processing is necessary to obtain pillar-like geometries. The last part of the work contains an analysis of the optical properties of nanowires. Furthermore, the influence of doping on these structures is investigated by electron microscopy and PL measurements. Also the integration of quantum well heterostructures is presented and examined. (orig.)

Comparison of stress and total energy methods for calculation of elastic properties of semiconductors.

Science.gov (United States)

Caro, M A; Schulz, S; O'Reilly, E P

2013-01-16

We explore the calculation of the elastic properties of zinc-blende and wurtzite semiconductors using two different approaches: one based on stress and the other on total energy as a function of strain. The calculations are carried out within the framework of density functional theory in the local density approximation, with the plane wave-based package VASP. We use AlN as a test system, with some results also shown for selected other materials (C, Si, GaAs and GaN). Differences are found in convergence rate between the two methods, especially in low symmetry cases, where there is a much slower convergence for total energy calculations with respect to the number of plane waves and k points used. The stress method is observed to be more robust than the total energy method with respect to the residual error in the elastic constants calculated for different strain branches in the systems studied.

The Ethics of Exploitation

Directory of Open Access Journals (Sweden)

Paul McLaughlin

2008-11-01

Full Text Available Philosophical inquiry into exploitation has two major deficiencies to date: it assumes that exploitation is wrong by definition; and it pays too much attention to the Marxian account of exploitation. Two senses of exploitation should be distinguished: the ‘moral’ or pejorative sense and the ‘non-moral’ or ‘non-prejudicial’ sense. By demonstrating the conceptual inadequacy of exploitation as defined in the first sense, and by defining exploitation adequately in the latter sense, we seek to demonstrate the moral complexity of exploitation. We contend, moreover, that moral evaluation of exploitation is only possible once we abandon a strictly Marxian framework and attempt, in the long run, to develop an integral ethic along Godwinian lines.

Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

International Nuclear Information System (INIS)

Kozlov, V.A.; Kozlovski, V.V.

2001-01-01

One of the modern methods for modifying semiconductors using beams of protons and alpha particles is analyzed; this modification is accomplished by the controlled introduction of radiation defects into the semiconductor. It is shown that doping semiconductors with radiation defects produced by irradiation with light ions opens up fresh opportunities for controlling the properties of semiconducting materials and for the development of new devices designed for optoelectronics, microelectronics, and nanoelectronics based on these materials; these devices differ favorably from those obtained by conventional doping methods, i.e., by diffusion, epitaxy, and ion implantation

Semi-infinite photocarrier radiometric model for the characterization of semiconductor wafer

International Nuclear Information System (INIS)

Liu Xianming; Li Bincheng; Huang Qiuping

2010-01-01

The analytical expression is derived to describe the photocarrier radiometric (PCR) signal for a semi-infinite semiconductor wafer excited by a square-wave modulated laser. For comparative study, the PCR signals are calculated by the semi-infinite model and the finite thickness model with several thicknesses. The fitted errors of the electronic transport properties by semi-infinite model are analyzed. From these results it is evident that for thick samples or at high modulation frequency, the semiconductor can be considered as semi-infinite.

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

Science.gov (United States)

Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

2012-08-28

Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis.

Semiconductor electrochemistry of coal pyrite. Final technical report, September 1990--September 1995

Energy Technology Data Exchange (ETDEWEB)

Osseo-Asare, K.; Wei, Dawei

1996-01-01

This project seeks to advance the fundamental understanding of the physico-chemical processes occurring at the pyrite/aqueous interface, in the context of coal cleaning, coal desulfurization, and acid mine drainage. Central to this research is the use of synthetic microsize particles of pyrite as model microelectrodes to investigate the semiconductor electrochemistry of pyrite. The research focuses on: (a) the synthesis of microsize particles of pyrite in aqueous solution at room temperature, (b) the formation of iron sulfide complex, the precursor of FeS or FeS{sub 2}, and (c) the relationship between the semiconductor properties of pyrite and its interfacial electrochemical behavior in the dissolution process. In Chapter 2, 3 and 4, a suitable protocol for preparing microsize particles of pyrite in aqueous solution is given, and the essential roles of the precursors elemental sulfur and ``FeS`` in pyrite formation are investigated. In Chapter 5, the formation of iron sulfide complex prior to the precipitation of FeS or FeS{sub 2} is investigated using a fast kinetics technique based on a stopped-flow spectrophotometer. The stoichiometry of the iron sulfide complex is determined, and the rate and formation constants are also evaluated. Chapter 6 provides a summary of the semiconductor properties of pyrite relevant to the present study. In Chapters 7 and 8, the effects of the semiconductor properties on pyrite dissolution are investigated experimentally and the mechanism of pyrite dissolution in acidic aqueous solution is examined. Finally, a summary of the conclusions from this study and suggestions for future research are presented in Chapter 9.

Neutron detection using boron gallium nitride semiconductor material

Directory of Open Access Journals (Sweden)

Katsuhiro Atsumi

2014-03-01

Full Text Available In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Semiconductor detectors in current energy dispersive X-ray spectral analysis

Energy Technology Data Exchange (ETDEWEB)

Betin, J; Zhabin, E; Krampit, I; Smirnov, V

1980-04-01

A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc.

Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

Science.gov (United States)

Samedov, Victor V.

2018-01-01

Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

Compact semiconductor lasers

CERN Document Server

Yu, Siyuan; Lourtioz, Jean-Michel

2014-01-01

This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Semiconductor spintronics

CERN Document Server

Xia, Jianbai; Chang, Kai

2012-01-01

Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

International Nuclear Information System (INIS)

Di Bartolomeo, Antonio

2016-01-01

In the past decade graphene has been one of the most studied materials for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the existing semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.

Method of doping a semiconductor

International Nuclear Information System (INIS)

Yang, C.Y.; Rapp, R.A.

1983-01-01

A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

Semiconductor detectors in current energy dispersive X-ray spectral analysis

International Nuclear Information System (INIS)

Betin, J.; Zhabin, E.; Krampit, I.; Smirnov, V.

1980-01-01

A review is presented of the properties of semiconductor detectors and of the possibilities stemming therefrom of using the detectors in X-ray spectral analysis in industries, in logging, in ecology and environmental control, in medicine, etc. (M.S.)

Development of a new technique of localised analysis of electrically active defects in semiconductors

International Nuclear Information System (INIS)

Heiser, T.

1988-07-01

An analysis technique derived from minority carrier transient spectroscopy (MCTS) was developed. By giving this technique spatial resolution via a focused optical beam, it is possible to exploit the high sensitivity and the spectroscopic nature of the technique to develop a method called scanning MCTS (SMCTS) which can be used to acquire information on lateral distribution of electrically active flaws in semiconductors or associated chemical impurities. The optimum conditions, corresponding to the maximum signal for the highest resolution, can be expressed by the value of a signal parameter. The transients system was digitized, considerably reducing background noise. In order to link the SMCTS to a given flaw, two methods for exploiting the transients are used. The method was verified in tests with artificial defects created by laser and on real cases, arising in industrial processes [fr

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

Semiconductor-metal transition induced by giant Stark effect in blue phosphorene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Xiong, Peng-Yu; Chen, Shi-Zhang; Zhou, Wu-Xing; Chen, Ke-Qiu, E-mail: keqiuchen@hnu.edu.cn

2017-06-28

The electronic structures and transport properties in monolayer blue phosphorene nanoribbons (BPNRs) with transverse electric field have been studied by using density functional theory and nonequilibrium Green's functions method. The results show that the band gaps of BPNRs with both armchair and zigzag edges are linearly decreased with the increasing of the strength of transverse electric field. A semiconductor-metal transition occurs when the electric field strength reaches to 5 V/nm. The Stark coefficient presents a linear dependency on BPNRs widths, and the slopes of both zBPNRs and aBPNRs are 0.41 and 0.54, respectively, which shows a giant Stark effect occurs. Our studies show that the semiconductor-metal transition originates from the giant Stark effect. - Highlights: • The electronic transport in blue phosphorene nanoribbons. • Semiconductor-metal transition can be observed. • The semiconductor-metal transition originates from the giant Stark effect.

A Designed Room Temperature Multilayered Magnetic Semiconductor

Science.gov (United States)

Bouma, Dinah Simone; Charilaou, Michalis; Bordel, Catherine; Duchin, Ryan; Barriga, Alexander; Farmer, Adam; Hellman, Frances; Materials Science Division, Lawrence Berkeley National Lab Team

2015-03-01

A room temperature magnetic semiconductor has been designed and fabricated by using an epitaxial antiferromagnet (NiO) grown in the (111) orientation, which gives surface uncompensated magnetism for an odd number of planes, layered with the lightly doped semiconductor Al-doped ZnO (AZO). Magnetization and Hall effect measurements of multilayers of NiO and AZO are presented for varying thickness of each. The magnetic properties vary as a function of the number of Ni planes in each NiO layer; an odd number of Ni planes yields on each NiO layer an uncompensated moment which is RKKY-coupled to the moments on adjacent NiO layers via the carriers in the AZO. This RKKY coupling oscillates with the AZO layer thickness, and it disappears entirely in samples where the AZO is replaced with undoped ZnO. The anomalous Hall effect data indicate that the carriers in the AZO are spin-polarized according to the direction of the applied field at both low temperature and room temperature. NiO/AZO multilayers are therefore a promising candidate for spintronic applications demanding a room-temperature semiconductor.

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Directory of Open Access Journals (Sweden)

Paul C. McIntyre

2012-07-01

Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

Integration of semiconductor and ceramic superconductor devices for microwave applications

NARCIS (Netherlands)

Klopman, B.B.G.; Klopman, B.B.G.; Wijers, H.W.; Gao, J.; Gao, J.; Gerritsma, G.J.; Rogalla, Horst

1991-01-01

Due to the very-low-loss properties of ceramic superconductors, high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature facilitates integration with semiconductor devices. Examples are bandpass amplifiers,

STM and synchrotron radiation studies of prototypical metal/semiconductor systems

DEFF Research Database (Denmark)

Lay, G. le; Aristov, V.Y.; Seehofer, L.

1994-01-01

Since the origin of surface science noble metal/elemental semiconductor couples have been considered as ''prototypical'' systems. After three decades of research their structural and electronic properties remain an intriguing maze despite recent advances made, especially thanks to the development...

Polymer and Polymer Gel of Liquid Crystalline Semiconductors

Institute of Scientific and Technical Information of China (English)

Teppei Shimakawa; Naoki Yoshimoto; Jun-ichi Hanna

2004-01-01

It prepared a polymer and polymer gel of a liquid crystalline (LC) semiconductor having a 2-phenylnaphthalene moiety and studied their charge carrier transport properties by the time-of-flight technique. It is found that polyacrylate having the mesogenic core moiety of 2-phenylnaphtalene (PNP-acrylate) exhibited a comparable mobility of 10-4cm2/Vs in smectic A phase to those in smectic A (SmA) phase of small molecular liquid crystals with the same core moiety, e.g., 6-(4'-octylphenyl)- 2-dodecyloxynaphthalene (8-PNP-O12), and an enhanced mobility up to 10-3cm2/Vs in the LC-glassy phase at room temperature, when mixed with a small amount of 8-PNP-O12. On the other hand, the polymer gel consisting of 20 wt %-hexamethylenediacrylate (HDA)-based cross-linked polymer and 8-PNP-O12 exhibited no degraded mobility when cross-linked at the mesophase. These results indicate that the polymer and polymer composite of liquid crystalline semiconductors provide us with an easy way to realize a quality organic semiconductor thin film for the immediate device applications.

Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

International Nuclear Information System (INIS)

Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

2015-01-01

Electron doped SrTiO 3 , a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO 3 systems show reasonably strong rectification even when SrTiO 3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO x in between the metal and n-SrTiO 3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO 3 ) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO 3 . The non-linear permittivity of n-SrTiO 3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors

New Icosahedral Boron Carbide Semiconductors

Science.gov (United States)

Echeverria Mora, Elena Maria

Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

Charge-transfer mobility and electrical conductivity of PANI as conjugated organic semiconductors.

Science.gov (United States)

Zhang, Yahong; Duan, Yuping; Song, Lulu; Zheng, Daoyuan; Zhang, Mingxing; Zhao, Guangjiu

2017-09-21

The intramolecular charge transfer properties of a phenyl-end-capped aniline tetramer (ANIH) and a chloro-substituted derivative (ANICl) as organic semiconductors were theoretically studied through the first-principles calculation based on the Marcus-Hush theory. The reorganization energies, intermolecular electronic couplings, angular resolution anisotropic mobilities, and density of states of the two crystals were evaluated. The calculated results demonstrate that both ANIH and ANICl crystals show the higher electron transfer mobilities than the hole-transfer mobilities, which means that the two crystals should prefer to function as n-type organic semiconductors. Furthermore, the angle dependence mobilities of the two crystals show remarkable anisotropic character. The maximum mobility μ max of ANIH and ANICl crystals is 1.3893 and 0.0272 cm 2 V -1 s -1 , which appear at the orientation angles near 176°/356° and 119°/299° of a conducting channel on the a-b reference plane. It is synthetically evaluated that the ANIH crystal possesses relatively lower reorganization energy, higher electronic coupling, and electron transfer mobility, which means that the ANIH crystal may be the more ideal candidate as a high performance n-type organic semiconductor material. The systematic theoretical studies on organic crystals should be conducive to evaluating the charge-transport properties and designing higher performance organic semiconductor materials.

Pressure-induced structural and semiconductor-semiconductor transitions in C o0.5M g0.5C r2O4

Science.gov (United States)

Rahman, S.; Saqib, Hajra; Zhang, Jinbo; Errandonea, D.; Menéndez, C.; Cazorla, C.; Samanta, Sudeshna; Li, Xiaodong; Lu, Junling; Wang, Lin

2018-05-01

The effect of pressure on the structural, vibrational, and electronic properties of Mg-doped Cr bearing spinel C o0.5M g0.5C r2O4 was studied up to 55 GPa at room-temperature using x-ray diffraction, Raman spectroscopy, electrical transport measurements, and ab initio calculations. We found that the ambient-pressure phase is cubic (spinel-type, F d 3 ¯m ) and underwent a pressure-induced structural transition to a tetragonal phase (space group I 4 ¯m 2 ) above 28 GPa. The ab initio calculation confirmed this first-order phase transition. The resistivity of the sample decreased at low pressures with the existence of a low-pressure (LP) phase and started to increase with the emergence of a high-pressure (HP) phase. The temperature dependent resistivity experiments at different pressures illustrated the wide band gap semiconducting nature of both the LP and HP phases with different activation energies, suggesting a semiconductor-semiconductor transition at HP. No evidence of chemical decomposition or a semiconductor-metal transition was observed in our studies.

Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

Science.gov (United States)

Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

2018-06-01

Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

Development of an integrated response generator for Si/CdTe semiconductor Compton cameras

International Nuclear Information System (INIS)

Odaka, Hirokazu; Sugimoto, Soichiro; Ishikawa, Shin-nosuke; Katsuta, Junichiro; Koseki, Yuu; Fukuyama, Taro; Saito, Shinya; Sato, Rie; Sato, Goro; Watanabe, Shin

2010-01-01

We have developed an integrated response generator based on Monte Carlo simulation for Compton cameras composed of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. In order to construct an accurate detector response function, the simulation is required to include a comprehensive treatment of the semiconductor detector devices and the data processing system in addition to simulating particle tracking. Although CdTe is an excellent semiconductor material for detection of soft gamma rays, its ineffective charge transport property distorts its spectral response. We investigated the response of CdTe pad detectors in the simulation and present our initial results here. We also performed the full simulation of prototypes of Si/CdTe semiconductor Compton cameras and report on the reproducibility of detection efficiencies and angular resolutions of the cameras, both of which are essential performance parameters of astrophysical instruments.

Decoherence in semiconductor cavity QED systems due to phonon couplings

DEFF Research Database (Denmark)

Nielsen, Per Kær; Mørk, Jesper

2014-01-01

We investigate the effect of electron-phonon interactions on the coherence properties of single photons emitted from a semiconductor cavity QED (quantum electrodynamics) system, i.e., a quantum dot embedded in an optical cavity. The degree of indistinguishability, governing the quantum mechanical...

Charge transport in organic semiconductors.

Science.gov (United States)

Bässler, Heinz; Köhler, Anna

2012-01-01

Modern optoelectronic devices, such as light-emitting diodes, field-effect transistors and organic solar cells require well controlled motion of charges for their efficient operation. The understanding of the processes that determine charge transport is therefore of paramount importance for designing materials with improved structure-property relationships. Before discussing different regimes of charge transport in organic semiconductors, we present a brief introduction into the conceptual framework in which we interpret the relevant photophysical processes. That is, we compare a molecular picture of electronic excitations against the Su-Schrieffer-Heeger semiconductor band model. After a brief description of experimental techniques needed to measure charge mobilities, we then elaborate on the parameters controlling charge transport in technologically relevant materials. Thus, we consider the influences of electronic coupling between molecular units, disorder, polaronic effects and space charge. A particular focus is given to the recent progress made in understanding charge transport on short time scales and short length scales. The mechanism for charge injection is briefly addressed towards the end of this chapter.

Semiconductor lasers stability, instability and chaos

CERN Document Server

Ohtsubo, Junji

2017-01-01

This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

Terahertz semiconductor nonlinear optics

DEFF Research Database (Denmark)

Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

2013-01-01

In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

Ferromagnetic semiconductor-metal transition in europium monoxide

International Nuclear Information System (INIS)

Arnold, M.

2007-10-01

We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO 1-x or Gd-doped Gd x Eu 1-x 0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

Nano-/microstructure improved photocatalytic activities of semiconductors.

Science.gov (United States)

Zhao, Tianyi; Zhao, Yong; Jiang, Lei

2013-10-13

Photocatalysis has emerged as a promising technique owing to its valuable applications in environmental purification. With the demand of building effective photocatalyst materials, semiconductor investigation experienced a developing process from simple chemical modification to complicated morphology design. In this review, the general relationship between morphology structures and photocatalytic properties is mainly discussed. Various nano-/microsized structures from zero- to three-dimensional are discussed, and the photocatalytic efficiency correspon- ding to the structures is analysed. The results showed that simple structures can be easily obtained and can facilitate chemical modification, whereas one- or three-dimensional structures can provide structure-enhanced properties such as surface area increase, multiple reflections of UV light, etc. Those principles of structure-related photocatalytic properties will afford basic ideology in designing new photocatalytic materials with more effective catalytic properties.

Relativistic quantum metrology: exploiting relativity to improve quantum measurement technologies.

Science.gov (United States)

Ahmadi, Mehdi; Bruschi, David Edward; Sabín, Carlos; Adesso, Gerardo; Fuentes, Ivette

2014-05-22

We present a framework for relativistic quantum metrology that is useful for both Earth-based and space-based technologies. Quantum metrology has been so far successfully applied to design precision instruments such as clocks and sensors which outperform classical devices by exploiting quantum properties. There are advanced plans to implement these and other quantum technologies in space, for instance Space-QUEST and Space Optical Clock projects intend to implement quantum communications and quantum clocks at regimes where relativity starts to kick in. However, typical setups do not take into account the effects of relativity on quantum properties. To include and exploit these effects, we introduce techniques for the application of metrology to quantum field theory. Quantum field theory properly incorporates quantum theory and relativity, in particular, at regimes where space-based experiments take place. This framework allows for high precision estimation of parameters that appear in quantum field theory including proper times and accelerations. Indeed, the techniques can be applied to develop a novel generation of relativistic quantum technologies for gravimeters, clocks and sensors. As an example, we present a high precision device which in principle improves the state-of-the-art in quantum accelerometers by exploiting relativistic effects.

Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

Energy Technology Data Exchange (ETDEWEB)

Tikhov, S. V.; Gorshkov, O. N.; Koryazhkina, M. N., E-mail: mahavenok@mail.ru; Kasatkin, A. P.; Antonov, I. N.; Vihrova, O. V.; Morozov, A. I. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

2016-12-15

The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

Defects in semiconductors

CERN Document Server

Romano, Lucia; Jagadish, Chennupati

2015-01-01

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

Selective, electrochemical etching of a semiconductor

Science.gov (United States)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

2018-03-20

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Binding Energy, Vapor Pressure and Melting Point of Semiconductor Nanoparticles

International Nuclear Information System (INIS)

H. H. Farrell; C. D. Van Siclen

2007-01-01

Current models for the cohesive energy of nanoparticles generally predict a linear dependence on the inverse particle diameter for spherical clusters, or, equivalently, on the inverse of the cube root of the number of atoms in the cluster. Although this is generally true for metals, we find that for the group IV semiconductors, C, Si and Ge, this linear dependence does not hold. Instead, using first principles, density functional theory calculations to calculate the binding energy of these materials, we find a quadratic dependence on the inverse of the particle size. Similar results have also been obtained for the metallic group IV elements Sn and Pb. This is in direct contradiction to current assumptions. Further, as a consequence of this quadratic behavior, the vapor pressure of semiconductor nanoparticles rises more slowly with decreasing size than would be expected. In addition, the melting point of these nanoparticles will experience less suppression than experienced by metal nanoparticles with comparable bulk binding energies. This non-linearity also affects sintering or Ostwald ripening behavior of these nanoparticles as well as other physical properties that depend on the nanoparticle binding energy. The reason for this variation in size dependence involves the covalent nature of the bonding in semiconductors, and even in the 'poor' metals. Therefore, it is expected that this result will hold for compound semiconductors as well as the elemental semiconductors

Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

Energy Technology Data Exchange (ETDEWEB)

Klimov, V.; McBranch, D.; Schwarz, C.

1998-08-10

Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

Fabrication of combinatorial nm-planar electrode array for high throughput evaluation of organic semiconductors

International Nuclear Information System (INIS)

Haemori, M.; Edura, T.; Tsutsui, K.; Itaka, K.; Wada, Y.; Koinuma, H.

2006-01-01

We have fabricated a combinatorial nm-planar electrode array by using photolithography and chemical mechanical polishing processes for high throughput electrical evaluation of organic devices. Sub-nm precision was achieved with respect to the average level difference between each pair of electrodes and a dielectric layer. The insulating property between the electrodes is high enough to measure I-V characteristics of organic semiconductors. Bottom-contact field-effect-transistors (FETs) of pentacene were fabricated on this electrode array by use of molecular beam epitaxy. It was demonstrated that the array could be used as a pre-patterned device substrate for high throughput screening of the electrical properties of organic semiconductors

Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features

Directory of Open Access Journals (Sweden)

M. Melvin David Kumar

2014-01-01

Full Text Available Metal/semiconductor and transparent conductive oxide (TCO/semiconductor heterojunctions have emerged as an effective modality in the fabrication of photoelectric devices. This review is following a recent shift toward the engineering of TCO layers and structured Si substrates, incorporating metal nanoparticles for the development of next-generation photoelectric devices. Beneficial progress which helps to increase the efficiency and reduce the cost, has been sequenced based on efficient technologies involved in making novel substrates, TCO layers, and electrodes. The electrical and optical properties of indium tin oxide (ITO and aluminum doped zinc oxide (AZO thin films can be enhanced by structuring the surface of TCO layers. The TCO layers embedded with Ag nanoparticles are used to enhance the plasmonic light trapping effect in order to increase the energy harvesting nature of photoelectric devices. Si nanopillar structures which are fabricated by photolithography-free technique are used to increase light-active surface region. The importance of the structure and area of front electrodes and the effect of temperature at the junction are the value added discussions in this review.

On increasing the efficiency of a streamer semiconductor laser

International Nuclear Information System (INIS)

Rusakov, K I; Parashchuk, V V

2007-01-01

The influence of intense electric and optical fields produced by a streamer discharge in wide-gap semiconductors on their spectroscopic properties is studied. The effect is manifested in the reversible change of the luminescence parameters of the active medium. Methods are proposed for increasing the service life and efficiency of a streamer laser in limiting regimes, which are based on the use of semiconductor protective layers of a certain crystallographic orientation and a crystal microrelief with the size of elements of the order of the wavelength of light. Streamer emission was observed and studied in new promising Eu:CaGa 2 S 4 and Eu:Ca 4 Ga 2 S 7 materials. (lasers)

Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

International Nuclear Information System (INIS)

Tao Zhikuo; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Xin; Xie Zili; Zheng Youdou; Li Li; Zheng Rongkun; Ringer, Simon P

2012-01-01

We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3 N clusters are observed with Fe 3 N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn 6 N 2.58 phases are observed with Mn 6 N 2.58 (0002) parallel to GaN(0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN(0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe 3 N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn 6 N 2.58 . (semiconductor materials)

Inelastic light scattering by low-lying excitations of electrons in low-dimensional semiconductors

Energy Technology Data Exchange (ETDEWEB)

Pellegrini, V. [NEST CNR-INFM and Scuola Normale Superiore, Pisa (Italy); Pinczuk, A. [Department of Physics, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey (United States)

2006-11-15

The low-dimensional electron systems that reside in artificial semiconductor heterostructures of great perfection are a contemporary materials base for explorations of collective phenomena. Studies of low-lying elementary excitations by inelastic light scattering offer insights on properties such energetics, interactions and spin magnetization. We review here recent light scattering results obtained from two-dimensional (2D) quantum fluids in semiconductor heterostructures under extreme conditions of low temperature and large magnetic field, where the quantum Hall phases are archetypes of novel behaviors. We also consider recent light scattering experiments that have probed the excitation spectra of few-electron states in semiconductor quantum dots. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Cathodoluminescence of semiconductors in the scanning electron microscope

International Nuclear Information System (INIS)

Noriegas, Javier Piqueras de

2008-01-01

Full text: Cathodoluminescence (CL) in the scanning electron microscope (SEM) is a nondestructive technique, useful for characterization of optical and electronic properties of semiconductors, with spatial resolution. The contrast in the images of CL is related to the presence of crystalline defects, precipitates or impurities and provides information on their spatial distribution. CL spectra allows to study local energy position of localized electronic states. The application of the CL is extended to semiconductor very different characteristics, such as bulk material, heterostructures, nanocrystalline film, porous semiconductor, nanocrystals, nanowires and other nano-and microstructures. In the case of wafers, provides information on the homogeneity of their electronic characteristics, density of dislocations, grain sub frontiers, distribution of impurities and so on. while on the study of heterostructures CL images can determine, for example, the presence of misfit dislocations at the interface between different sheets, below the outer surface of the sample. In the study of other low dimensional structures, such as nanocrystalline films, nanoparticles and nano-and microstructures are observed elongated in some cases quantum confinement effects from the CL spectra. Moreover, larger structures, the order of hundreds of nanometers, with forms of wires, tubes or strips, is that in many semiconductor materials, mainly oxides, the behavior of luminescence is different from bulk material. The microstructures have a different structure of defects and a greater influence of the surface, which in some cases leads to a higher emission efficiency and a different spectral distribution. The presentation describes the principle of the CL technique and examples of its application in the characterization of a wide range of both semiconductor materials of different composition, and of different sizes ranging from nanostructures to bulk samples

Enhanced performance of semiconductor optical amplifier at high direct modulation speed with birefringent fiber loop

Directory of Open Access Journals (Sweden)

K. E. Zoiros

2014-07-01

Full Text Available We employ a birefringent fiber loop (BFL for enhancing the performance of a semiconductor optical amplifier (SOA which is directly modulated. By properly exploiting the BFL comb-like spectral response, we show that the SOA can be directly modulated at a data rate which is more than five times faster than that enabled by the SOA electrical bandwidth. The experimental results, which include chirp measurements, demonstrate the significant improvements achieved in the performance of the directly modulated SOA with the help of the BFL.

Optical properties of crystalline semiconductors and dielectrics

International Nuclear Information System (INIS)

Forouhi, A.R.; Bloomer, I.

1988-01-01

A new formulation for the complex index of refraction, N(E) = n(E)-ik(E), as a function of photon energy E, for crystalline semiconductors and dielectrics is developed based on our previous derivation of N(E) for amorphous materials. The extinction coefficient k(E) is deduced from a one-electron model with finite lifetime for the excited electron state. The refractive index n(E) is then derived from the Kramers-Kronig relation as the Hilbert transform of k(E). It is shown that n(∞)>1. Excellent agreement is found between our equations for n(E) and k(E) and published measured values for crystalline Si, Ge, GaP, GaAs, GaSb, InP, InAs, InSb, SiC, cubic C, and α-SiO 2 , over a wide range of energies (∼0--20 eV). Far fewer parameters, all of which have physical significance, are required and they can be determined for a particular material from the position and strength of the peaks in the k spectrum

Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Raju [Department of Electrical and Electronic Engineering, Shahjalal University of Science and Technology, Sylhet 3114 (Bangladesh); Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Moslehuddin, A.S.M.; Mahmood, Zahid Hasan [Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Hossain, A.K.M. Akther, E-mail: akmhossain@phy.buet.ac.bd [Department of Physics, Bangladesh University of Engineering and Technology, Dhaka 1000 (Bangladesh)

2015-03-15

Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

Physics with isotopically controlled semiconductors

International Nuclear Information System (INIS)

Haller, E.E.

1994-08-01

Control of the isotopic composition of semiconductors offers a wide range of new scientific opportunities. In this paper a number of recent results obtained with isotopically pure as well as deliberately mixed diamond and Ge bulk single crystals and Ge isotope superlattices will be reviewed. Isotopic composition affects several properties such as phonon energies, bandstructure and lattice constant in subtle but theoretically well understood ways. Large effects are observed for thermal conductivity, local vibrational modes of impurities and after neutron transmutation doping (NTD). Several experiments which could profit greatly from isotope control are proposed

Defect identification in semiconductors with positron annihilation: experiment and theory

Science.gov (United States)

Tuomisto, Filip

2015-03-01

Positron annihilation spectroscopy is a very powerful technique for the detection, identification and quantification of vacancy-type defects in semiconductors. In the past decades, it has been used to reveal the relationship between opto-electronic properties and specific defects in a wide variety of materials - examples include parasitic yellow luminescence in GaN, dominant acceptor defects in ZnO and broad-band absorption causing brown coloration in natural diamond. In typical binary compound semiconductors, the selective sensitivity of the technique is rather strongly limited to cation vacancies that possess significant open volume and suitable charge (negative of neutral). On the other hand, oxygen vacancies in oxide semiconductors are a widely debated topic. The properties attributed to oxygen vacancies include the inherent n-type conduction, poor p-type dopability, coloration (absorption), deep level luminescence and non-radiative recombination, while the only direct experimental evidence of their existence has been obtained on the crystal surface. We will present recent advances in combining state-of-the-art positron annihilation experiments and ab initio computational approaches. The latter can be used to model both the positron lifetime and the electron-positron momentum distribution - quantities that can be directly compared with experimental results. We have applied these methods to study vacancy-type defects in III-nitride semiconductors (GaN, AlN, InN) and oxides such as ZnO, SnO2, In2O3andGa2O3. We will show that cation-vacancy-related defects are important compensating centers in all these materials when they are n-type. In addition, we will show that anion (N, O) vacancies can be detected when they appear as complexes with cation vacancies.

Semiconductors data handbook

CERN Document Server

Madelung, Otfried

2004-01-01

This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

Organic-inorganic semiconductor devices and 3, 4, 9, 10 perylenetetracarboxylic dianhydride: an early history of organic electronics

International Nuclear Information System (INIS)

Forrest, S R

2003-01-01

The demonstration, over 20 years ago, of an organic-inorganic heterojunction (OI HJ) device along with investigations of the growth and physical properties of the archetypal crystalline molecular organic semiconductor 3, 4, 9, 10 perylenetetracarboxylic dianhydride are discussed. Possible applications of OI HJ devices are introduced and the dramatic change in conductive properties of these materials when exposed to high-energy ion beams is described. The past and future prospects for hybrid organic-on-inorganic semiconductor structures for use in electronic and photonic applications are also presented

Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

International Nuclear Information System (INIS)

Chang-Hwan Kim

2003-01-01

Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms

Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

Energy Technology Data Exchange (ETDEWEB)

Kim, Chang-Hwan [Iowa State Univ., Ames, IA (United States)

2003-01-01

Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

Magnetic resonance of semiconductors and their nanostructures basic and advanced applications

CERN Document Server

Baranov, Pavel G; Jelezko, Fedor; Wrachtrup, Jörg

2017-01-01

This book explains different magnetic resonance (MR) techniques and uses different combinations of these techniques to analyze defects in semiconductors and nanostructures. It also introduces novelties such as single defects MR and electron-paramagnetic-resonance-based methods: electron spin echo, electrically detected magnetic resonance, optically detected magnetic resonance and electron-nuclear double resonance – the designated tools for investigating the structural and spin properties of condensed systems, living matter, nanostructures and nanobiotechnology objects. Further, the authors address problems existing in semiconductor and nanotechnology sciences that can be resolved using MR, and discuss past, current and future applications of MR, with a focus on advances in MR methods. The book is intended for researchers in MR studies of semiconductors and nanostructures wanting a comprehensive review of what has been done in their own and related fields of study, as well as future perspectives.

Carrier-phonon interaction in semiconductor quantum dots

Energy Technology Data Exchange (ETDEWEB)

Seebeck, Jan

2009-03-10

In recent years semiconductor quantum dots have been studied extensively due to their wide range of possible applications, predominantly for light sources. For successful applications, efficient carrier scattering processes as well as a detailed understanding of the optical properties are of central importance. The aims of this thesis are theoretical investigations of carrier scattering processes in InGaAs/GaAs quantum dots on a quantum-kinetic basis. A consistent treatment of quasi-particle renormalizations and carrier kinetics for non-equilibrium conditions is presented, using the framework of non-equilibrium Green's functions. The focus of our investigations is the interaction of carriers with LO phonons. Important for the understanding of the scattering mechanism are the corresponding quasi-particle properties. Starting from a detailed study of quantum-dot polarons, scattering and dephasing processes are discussed for different temperature regimes. The inclusion of polaron and memory effects turns out to be essential for the description of the carrier kinetics in quantum-dot systems. They give rise to efficient scattering channels and the obtained results are in agreement with recent experiments. Furthermore, a consistent treatment of the carrier-LO-phonon and the carrier-carrier interaction is presented for the optical response of semiconductor quantum dots, both giving rise to equally important contributions to the dephasing. Beside the conventional GaAs material system, currently GaN based light sources are of high topical interest due to their wide range of possible emission frequencies. In this material additionally intrinsic properties like piezoelectric fields and strong band-mixing effects have to be considered. For the description of the optical properties of InN/GaN quantum dots a procedure is presented, where the material properties obtained from an atomistic tight-binding approach are combined with a many-body theory for non

Band anticrossing effects in highly mismatched semiconductor alloys

Energy Technology Data Exchange (ETDEWEB)

Wu, Junqiao [Univ. of California, Berkeley, CA (United States)

2002-01-01

The first five chapters of this thesis focus on studies of band anticrossing (BAC) effects in highly electronegativity- mismatched semiconductor alloys. The concept of bandgap bowing has been used to describe the deviation of the alloy bandgap from a linear interpolation. Bowing parameters as large as 2.5 eV (for ZnSTe) and close to zero (for AlGaAs and ZnSSe) have been observed experimentally. Recent advances in thin film deposition techniques have allowed the growth of semiconductor alloys composed of significantly different constituents with ever- improving crystalline quality (e.g., GaAs_1-xN_x and GaP_1-xN_x with x ~< 0.05). These alloys exhibit many novel and interesting properties including, in particular, a giant bandgap bowing (bowing parameters > 14 eV). A band anticrossing model has been developed to explain these properties. The model shows that the predominant bowing mechanism in these systems is driven by the anticrossing interaction between the localized level associated with the minority component and the band states of the host. In this thesis I discuss my studies of the BAC effects in these highly mismatched semiconductors. It will be shown that the results of the physically intuitive BAC model can be derived from the Hamiltonian of the many-impurity Anderson model. The band restructuring caused by the BAC interaction is responsible for a series of experimental observations such as a large bandgap reduction, an enhancement of the electron effective mass, and a decrease in the pressure coefficient of the fundamental gap energy. Results of further experimental investigations of the optical properties of quantum wells based on these materials will be also presented. It will be shown that the BAC interaction occurs not only between localized states and conduction band states at the Brillouin zone center, but also exists over all of k-space. Finally, taking ZnSTe and ZnSeTe as examples, I show that BAC also

Proceedings of defect engineering in semiconductor growth, processing and device technology

International Nuclear Information System (INIS)

Ashok, S.; Chevallier, J.; Sumino, K.; Weber, E.

1992-01-01

This volume results from a symposium that was part of the 1992 Spring Meeting of the Materials Research Society, held in San Francisco from April 26 to May 1, 1992. The symposium, entitled Defect Engineering in Semiconductor Growth, Processing and Device Technology, was the first of its kind at MRS and brought together academic and industrial researchers with varying perspectives on defects in semiconductors. Its aim was to go beyond defect control, and focus instead on deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. While the concept of defect engineering has at least a vague perception in techniques such as impurity/defect gettering and the use of the EL2 level in GaAs, more extensive as well as subtle uses of defects are emerging to augment the field. This symposium was intended principally to encourage creative new applications of defects in all aspects of semiconductor technology. The organization of this proceedings volume closely follows the topics around which the sessions were built. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects, their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. The issues addressed by the papers on defects in thin films include impurity and stoichiometry control, defects created by plasmas and the use of electron/ion irradiation for doping control

Studies of optical properties and applications of some mixed ternary semiconductors

International Nuclear Information System (INIS)

Ghosh, P.S.; Ghosh, D.K.; Samanta, L.K.

1989-01-01

Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author)

Effect of van der Waals interaction on the properties of SnS2 layered semiconductor

International Nuclear Information System (INIS)

Seminovski, Y.; Palacios, P.; Wahnón, P.

2013-01-01

Nowadays, dispersion correction applied on layered semiconductors is a topic of interest. Among the known layered semiconductors, SnS 2 polytypes are wide gap semiconductors with a van der Waals interaction between their layers, which could form good materials to be used in photovoltaic applications. The present work gives an approach to the SnS 2 geometrical and electronic characterization using an empirical dispersion correction added to the Perdew–Burke–Ernzerhof functional and subsequent actualization of the electronic charge density using the screened hybrid Heyd–Scuseria–Ernzerhof functional using a density functional code. The obtained interlayer distance and band-gap are in good agreement with experimental values when van der Waals dispersion forces are included. - Highlights: ► Tin disulphide (SnS 2 ) has been calculated using density functional theory methods. ► A dispersion correction was also applied for two different SnS 2 polytypes. ► Geometrical parameters and band-gaps were obtained using both approaches. ► Our calculations give a good agreement of the computed band gap with experiment

Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

International Nuclear Information System (INIS)

Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

2013-01-01

Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

Cultural Work as a Site of Struggle: Freelancers and Exploitation

Directory of Open Access Journals (Sweden)

Nicole S. Cohen

2012-05-01

Full Text Available This paper argues that Marxist political economy is a useful framework for understanding contemporary conditions of cultural work. Drawing on Karl Marx’s foundational concepts, labour process theory, and a case study of freelance writers, I argue that the debate over autonomy and control in cultural work ignores exploitation in labour-capital relationships, which is a crucial process shaping cultural work. To demonstrate the benefits of this approach, I discuss two methods media firms use to extract surplus value from freelance writers: exploitation of unpaid labour time and exploitation of intellectual property through aggressive copyright regimes. I argue that a Marxist perspective can uncover the dynamics that are transforming cultural industries and workers’ experiences. From this perspective, cultural work is understood as a site of struggle.

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

Science.gov (United States)

Ólafsson, Sveinn; Sveinbjörnsson, Einar

2010-12-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

Modulating the electronic and magnetic properties of bilayer borophene via transition metal atoms intercalation: from metal to half metal and semiconductor.

Science.gov (United States)

Zhang, Xiuyun; Sun, Yi; Ma, Liang; Zhao, Xinli; Yao, Xiaojing

2018-07-27

Borophene, a two-dimensional monolayer made of boron atoms, has attracted wide attention due to its appealing properties. Great efforts have been devoted to fine tuning its electronic and magnetic properties for desired applications. Herein, we theoretically investigate the versatile electronic and magnetic properties of bilayer borophene (BLB) intercalated by 3d transition metal (TM) atoms, TM@BLBs (TM = Ti-Fe), using ab initio calculations. Four allotropes of AA-stacking (α 1 -, β-, β 12 - and χ 3 -) BLBs with different intercalation concentrations of TM atoms are considered. Our results show that the TM atoms are strongly bonded to the borophene layers with fairly large binding energies, around 6.31 ∼ 15.44 eV per TM atom. The BLBs with Cr and Mn intercalation have robust ferromagnetism, while for the systems decorated with Fe atoms, fruitful magnetic properties, such as nonmagnetic, ferromagnetic or antiferromagnetic, are identified. In particular, the α 1 - and β-BLBs intercalated by Mn or Fe atom can be transformed into a semiconductor, half metal or graphene-like semimetal. Moreover, some heavily doped TM@BLBs expose high Curie temperatures above room temperature. The attractive properties of TM@BLBs entail an efficient way to modulate the electronic and magnetic properties of borophene sheets for advanced applications.

Photoelectrochemical processes in organic semiconductor: Ambipolar perylene diimide thin film

Science.gov (United States)

Kim, Jung Yong; Chung, In Jae

2018-03-01

A thin film of N,N‧-dioctadecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C18) is spin-coated on indium tin oxide (ITO) glass. Using the PTCDI-C18/ITO electrode, we fabricate a photoelectrochemical cell with the ITO/PTCDI-C18/Redox Electrolyte/Pt configuration. The electrochemical properties of this device are investigated as a function of hydroquinone (HQ) concentration, bias voltage, and wavelength of light. Anodic photocurrent is observed at V ≥ -0.2 V vs. Ag/AgCl, indicating that the PTCDI-C18 film acts as an n-type semiconductor as usual. However, when benzoquinone (BQ) is inserted into the electrolyte system instead of HQ, cathodic photocurrent is observed at V ≤ 0.0 V, displaying that PTCDI-C18 abnormally serves as a p-type semiconductor. Hence the overall results reveal that the PTCDI-C18 film can be an ambipolar functional semiconductor depending on the redox couple in the appropriate voltage.

Solution processing of polymer semiconductor: Insulator blends-Tailored optical properties through liquid-liquid phase separation control

KAUST Repository

Hellmann, Christoph; Treat, Neil D.; Scaccabarozzi, Alberto D.; Razzell Hollis, Joseph; Fleischli, Franziska D.; Bannock, James H.; de Mello, John; Michels, Jasper J.; Kim, Ji-Seon; Stingelin, Natalie

2014-01-01

© 2014 Wiley Periodicals, Inc. It has been demonstrated that the 0-0 absorption transition of poly(3-hexylthiophene) (P3HT) in blends with poly(ethylene oxide) (PEO) could be rationally tuned through the control of the liquid-liquid phase separation process during solution deposition. Pronounced J-like aggregation behavior, characteristic for systems of a low exciton band width, was found for blends where the most pronounced liquid-liquid phase separation occurred in solution, leading to domains of P3HT and PEO of high phase purity. Since liquid-liquid phase separation could be readily manipulated either by the solution temperature, solute concentration, or deposition temperature, to name a few parameters, our findings promise the design from the out-set of semiconductor:insulator architectures of pre-defined properties by manipulation of the interaction parameter between the solutes as well as the respective solute:solvent system using classical polymer science principles.

Solution processing of polymer semiconductor: Insulator blends-Tailored optical properties through liquid-liquid phase separation control

KAUST Repository

Hellmann, Christoph

2014-12-17

© 2014 Wiley Periodicals, Inc. It has been demonstrated that the 0-0 absorption transition of poly(3-hexylthiophene) (P3HT) in blends with poly(ethylene oxide) (PEO) could be rationally tuned through the control of the liquid-liquid phase separation process during solution deposition. Pronounced J-like aggregation behavior, characteristic for systems of a low exciton band width, was found for blends where the most pronounced liquid-liquid phase separation occurred in solution, leading to domains of P3HT and PEO of high phase purity. Since liquid-liquid phase separation could be readily manipulated either by the solution temperature, solute concentration, or deposition temperature, to name a few parameters, our findings promise the design from the out-set of semiconductor:insulator architectures of pre-defined properties by manipulation of the interaction parameter between the solutes as well as the respective solute:solvent system using classical polymer science principles.

Raman spectroscopy as an advanced structural nanoprobe for conjugated molecular semiconductors

International Nuclear Information System (INIS)

Wood, Sebastian; Hollis, Joseph Razzell; Kim, Ji-Seon

2017-01-01

Raman spectroscopy has emerged as a powerful and important characterisation tool for probing molecular semiconducting materials. The useful optoelectronic properties of these materials arise from the delocalised π -electron density in the conjugated core of the molecule, which also results in large Raman scattering cross-sections and a strong coupling between its electronic states and vibrational modes. For this reason, Raman spectroscopy offers a unique insight into the properties of molecular semiconductors, including: chemical structure, molecular conformation, molecular orientation, and fundamental photo- and electro-chemical processes—all of which are critically important to the performance of a wide range of optical and electronic organic semiconductor devices. Experimentally, Raman spectroscopy is non-intrusive, non-destructive, and requires no special sample preparation, and so is suitable for a wide range of in situ measurements, which are particularly relevant to issues of thermal and photochemical stability. Here we review the development of the family of Raman spectroscopic techniques, which have been applied to the study of conjugated molecular semiconductors. We consider the suitability of each technique for particular circumstances, and the unique insights it can offer, with a particular focus on the significance of these measurements for the continuing development of stable, high performance organic electronic devices. (topical review)

Optoelectronic and Photovoltaic Properties of the Air-Stable Organohalide Semiconductor (CH 3 NH 3 ) 3 Bi 2 I 9

KAUST Repository

Abulikemu, Mutalifu

2016-07-14

Lead halide perovskite materials have shown excellent optoelectronic as well as photovoltaic properties. However, the presence of lead and the chemical instability relegate lead halide perovskites to research applications only. Here, we investigate an emerging lead-free and air stable compound (CH3NH3)3Bi2I9 as a non-toxic potential alternative to lead halide perovskites. We have synthesized thin films, powders and millimeter-scale single crystals of (CH3NH3)3Bi2I9 and investigated their structural and optoelectronic properties. We demonstrate that the degree of crystallinity strongly affects the optoelectronic properties of the material, resulting in significantly different band gaps in polycrystalline thin films and single crystals. Surface photovoltage spectroscopy reveals outstanding photocharge generation in the visible (<700 nm), while transient absorption spectroscopy and space charge limited current measurements point to a long exciton lifetime and a high carrier mobility, respectively, similar to lead halide perovskites, pointing to the remarkable potential of this semiconductor. Photovoltaic devices fabricated using this material yield low power conversion efficiency (PCE) to date, but the PCE is expected to rise with improvements in thin film processing and device engineering.

Metastable states in amorphous chalcogenide semiconductors

CERN Document Server

Mikla, Victor I

2009-01-01

This book addresses an interesting and technologically important class of materials, the amorphous chalcogenide semiconductors. Experimental results on the structural and electronic metastable states in Se-rich chalcogenides are presented. Special attention is paid to the states in the mobility gap and their sensitivity to various factors such as irradiation, annealing and composition. Photoinduced changes of structure and physical properties are also considered and structural transformation at photocrystallization is studied in detail. Finally, the authors discuss potential applications of th

Defects in semiconductors

International Nuclear Information System (INIS)

Pimentel, C.A.F.

1983-01-01

Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

Damage induced in semiconductors by swift heavy ion irradiation

International Nuclear Information System (INIS)

Levalois, M.; Marie, P.

1999-01-01

The behaviour of semiconductors under swift heavy ion irradiation is different from that of metals or insulators: no spectacular effect induced by the inelastic energy loss has been reported in these materials. We present here a review of irradiation effects in the usual semiconductors (silicon, germanium and gallium arsenide). The damage is investigated by means of electrical measurements. The usual mechanisms of point defect creation can account for the experimental results. Besides, some results obtained on the wide gap semiconductor silicon carbide are reported. Concerning the irradiation effects induced by heavy ions in particle detectors, based on silicon substrate, we show that the deterioration of the detector performances can be explained from the knowledge of the substrate properties which are strongly perturbed after high doses of irradiation. Finally, some future ways of investigation are proposed. The silicon substrate is a good example to compare the irradiation effects with different particles such as electrons, neutrons and heavy ions. It is then necessary to use parameters which account for the local energy deposition, in order to describe the damage in the material

Spectroscopy of organic semiconductors from first principles

Science.gov (United States)

Sharifzadeh, Sahar; Biller, Ariel; Kronik, Leeor; Neaton, Jeffery

2011-03-01

Advances in organic optoelectronic materials rely on an accurate understanding their spectroscopy, motivating the development of predictive theoretical methods that accurately describe the excited states of organic semiconductors. In this work, we use density functional theory and many-body perturbation theory (GW/BSE) to compute the electronic and optical properties of two well-studied organic semiconductors, pentacene and PTCDA. We carefully compare our calculations of the bulk density of states with available photoemission spectra, accounting for the role of finite temperature and surface effects in experiment, and examining the influence of our main approximations -- e.g. the GW starting point and the application of the generalized plasmon-pole model -- on the predicted electronic structure. Moreover, our predictions for the nature of the exciton and its binding energy are discussed and compared against optical absorption data. We acknowledge DOE, NSF, and BASF for financial support and NERSC for computational resources.

Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors

International Nuclear Information System (INIS)

Blumers, Mathias

2012-01-01

The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S 2 .σ/k, where S is the Seebeck-coefficient, σ is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb 1-x Sr x Te and Bi 2 (Se x Te 1-x ) 3 , respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, σ and κ parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,σ,κ) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

Probing the defects in nano-semiconductors using positrons

Energy Technology Data Exchange (ETDEWEB)

Nambissan, P M G, E-mail: pmg.nambissan@saha.ac.in [Nuclear and Atomic Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India)

2011-01-10

Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS{sub 2} nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn{sup 2+}-doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

Probing the defects in nano-semiconductors using positrons

International Nuclear Information System (INIS)

Nambissan, P M G

2011-01-01

Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS 2 nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn 2+ -doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

Probing the defects in nano-semiconductors using positrons

Science.gov (United States)

Nambissan, P. M. G.

2011-01-01

Positron annihilation spectroscopy (PAS) is a very useful tool to study the defect properties of nanoscale materials. The ability of thermalized positrons to diffuse over to the surfaces of nanocrystallites prior to annihilation helps to explore the disordered atomic arrangement over there and is very useful in understanding the structure and properties of nanomaterials. As examples, the results of studies on FeS2 nanorods and ZnS nanoparticles are presented. In semiconductor nanoparticles, there are positron trapping sites within the grains also and these are characterised by using appropriate models on the measured positron lifetimes. We have observed vivid changes in the measured positron lifetimes and Doppler broadened gamma ray spectral lineshapes during structural transformations prompted by substitutional effects in Mn2+-doped ZnS nanorods. Interestingly, the nanoparticles did not exhibit the transformation, implying the morphologies of the nanosystems playing a decisive role. Quantum confinement effect in CdS nanoparticles was another phenomenon that could be seen through positron annihilation experiments. Coincidence Doppler broadening measurements have been useful to identify the elemental environment around the vacancy clusters that trap positrons. Recent studies on nanocrystalline oxide and sulphide semiconductors are also discussed.

Semiconductor devices as track detectors in high energy colliding beam experiments

International Nuclear Information System (INIS)

Ludlam, T.

1980-01-01

In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems

Semiconductor devices as track detectors in high energy colliding beam experiments

Energy Technology Data Exchange (ETDEWEB)

Ludlam, T

1980-01-01

In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems.

Metal semiconductor contacts and devices

CERN Document Server

Cohen, Simon S; Einspruch, Norman G

1986-01-01

VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

Reducing leakage current in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Mercury telluride as a zero-gap semiconductor