Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

Science.gov (United States)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

Applying low-energy multipulse excimer laser annealing to improve charge retention of Au nanocrystals embedded MOS capacitors

International Nuclear Information System (INIS)

Shen, Kuan-Yuan; Chen, Hung-Ming; Liao, Ting-Wei; Kuan, Chieh-Hsiung

2015-01-01

The low-energy multipulse excimer laser annealing (LEM-ELA) is proposed to anneal the nanostructure of nanocrystal (NC) embedded in a SiO 2 thin film without causing atomic diffusion and damaging the NCs, since the LEM-ELA combining the advantages of laser annealing and UV curing features rapid heating and increasing oxide network connectivity. A Fourier transform infrared spectroscopy (FTIR) characterization of SiO 2 thin films annealed using LEM-ELA indicated that the quality was improved through the removal of water-related impurities and the reconstruction of the network Si–O–Si bonds. Then, LEM-ELA was applied to a SiO 2 thin film embedded with Au NCs, which were fabricated as MOS capacitors. The charge retention was greatly improved and the percentage of retained charges was about 10% after 3  ×  10 8  s. To investigate and differentiate the effects of LEM-ELA on charges stored in both oxide traps and in the Au NCs, a double-mechanism charge relaxation analysis was performed. The results indicated that the oxide traps were removed and the confinement ability of Au NCs was enhanced. The separated memory windows contributed from the charges in Au NCs and those in oxide traps were obtained and further confirmed that the LEM-ELA removed oxide traps without damaging the Au NCs. (paper)

Electrodeless excimer laser

International Nuclear Information System (INIS)

Lisi, N.

2001-01-01

In this paper it is proposed how to build an excimer laser based on an electrodeless discharge (or Dielectric Barrier Discharge). Such laser could operate with a low energy per pulse ( 2 excimer molecule, whose emission wavelength in the VUV range (157 nm) at high reprate is particularly interesting in the micro-lithography field [it

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

International Nuclear Information System (INIS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N; Uraoka, Yukiharu; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ∼13 cm 2 V −1 s −1 and small threshold voltage which varied from ∼0–3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs. (paper)

Optical and electronic properties of HWCVD and PECVD silicon films irradiated using excimer and Nd:Yag lasers

International Nuclear Information System (INIS)

Shaikh, M.Z.; O'Neill, K.A.; Anthony, S.; Persheyev, S.K.; Rose, M.J.

2006-01-01

Thin silicon film samples were deposited using HWCVD and PECVD techniques to study the influence of laser annealing on their optical and electronic properties. Samples were annealed in air using a XeCl excimer and Nd:Yag lasers. Excimer laser annealing (ELA) at 50 to 222 mJ/cm 2 increased conductivity in PECVD films by 2 to 3 orders of magnitude and in HWCVD films by 1 to 2 orders of magnitude. ELA was also seen to decrease the optical gap in PECVD films by 0.5 eV and HWCVD films by 0.15 eV. Silicon-oxygen bond content was higher in as-deposited HWCVD films than PECVD films. Hydrogen content (at.%) in PECVD films was higher than HWCVD for higher H dilution ratios. A Nd:Yag laser 3-beam interference pattern was used to produce a periodic array of crystals in both PECVD and HWCVD films

Structural and morphological transformations of TiO2 nanotube arrays induced by excimer laser treatment

International Nuclear Information System (INIS)

Hsu, Ming-Yi; Thang, Nguyen Van; Wang Chih; Leu Jihperng

2012-01-01

The structural and morphological transformations of TiO 2 nanotube arrays (TNAs) treated by excimer laser annealing (ELA) were investigated as a function of the laser fluence using parallel and tilted modes. Results showed that the crystallinity of the ELA-treated TNAs reached only about 50% relative to that of TNAs treated by furnace anneal at 400 °C for 1 h. The phase transformation starts from the top surface of the TNAs with surface damage resulting from short penetration depth and limited one-dimensional heat transport from the surface to the bottom under extremely short pulse duration (25 ns) of the excimer laser. When a tilted mode was used, the crystallinity of TNAs treated by ELA at 85° was increased to 90% relative to that by the furnace anneal. This can be attributed to the increased area of the laser energy interaction zone and better heat conduction to both ends of the TNAs. - Highlights: ► We examined the morphology and microstructure of TNAs treated by ELA. ► Crystallinity of parallel ELA-treated TNAs reached ∼50% of furnace anneal. ► Tilted ELA at 85o enhanced the degree of crystallization in TNAs to 90%.

Excimer laser corneal surgery and free oxygen radicals.

Science.gov (United States)

Bilgihan, K; Bilgihan, A; Akata, F; Hasanreisoğlu, B; Türközkan, N

1996-01-01

Corneal photoablation with 193 nm argon fluoride excimer laser is a new technique for the treatment of refractive errors and for removing corneal opacities and irregularities. Ultraviolet radiation and thermal injury induce free radical formation in the tissues. The aim of this study was to confirm the production of free radicals by excimer laser photoablation in rabbits. The thermal changes of the posterior corneal surface were recorded during excimer laser photoablation. The lipid peroxide (LPO) levels and superoxide dismutase (SOD) activities of aqueous humour were measured after excimer laser keratectomy. The aqueous LPO levels were not changed after excimer laser ablation, but both the thermal increase in the cornea during the photoablation and the decreased aqueous SOD activities suggest that free radicals are formed in the cornea during excimer laser keratectomy, and that they may be responsible for some of the complications of excimer laser corneal surgery.

Laser annealed HWCVD and PECVD thin silicon films. Electron field emission

International Nuclear Information System (INIS)

O'Neill, K.A.; Shaikh, M.Z.; Lyttle, G.; Anthony, S.; Fan, Y.C.; Persheyev, S.K.; Rose, M.J.

2006-01-01

Electron Field Emission (FE) properties of various laser annealed thin silicon films on different substrates were investigated. HWCVD microcrystalline and PECVD amorphous silicon films were irradiated with Nd : YAG and XeCl Excimer lasers at varying energy densities. Encouraging FE results were mainly from XeCl Excimer laser processed PECVD and HWCVD films on metal backplanes. FE measurements were complemented by the study of film surface morphology. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE properties of the films were also found to be particularly influenced by the backplane material

Excimer laser decontamination

Science.gov (United States)

Sentis, Marc L.; Delaporte, Philippe C.; Marine, Wladimir; Uteza, Olivier P.

2000-04-01

The application of excimer laser ablation process to the decontamination of radioactive surfaces is discussed. This technology is very attractive because it allows to efficiently remove the contaminated particles without secondary waste production. To demonstrate the capability of such technology to efficiently decontaminate large area, we studied and developed a prototype which include a XeCl laser, an optical fiber delivery system and an ablated particles collection cell. The main physical processes taking place during UV laser ablation will be explained. The influence of laser wavelength, pulse duration and absorption coefficient of material will be discussed. Special studies have been performed to understand the processes which limit the transmission of high average power excimer laser through optical fiber, and to determine the laser conditions to optimize the value of this transmission. An in-situ spectroscopic analysis of laser ablation plasma allows the real time control of the decontamination. The results obtained for painting or metallic oxides removal from stainless steel surfaces will be presented.

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

NARCIS (Netherlands)

Fujii, M.; Ishikawa, Y.; Ishihara, R.; Van der Cingel, J.; Mofrad, M.R.T.; Horita, M.; Uraoka, Y.

2013-01-01

In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C

308nm Excimer Laser in Dermatology

Science.gov (United States)

Mehraban, Shadi

2014-01-01

308nm xenon-chloride excimer laser, a novel mode of phototherapy, is an ultraviolet B radiation system consisting of a noble gas and halide. The aim of this systematic review was to investigate the literature and summarize all the experiments, clinical trials and case reports on 308-nm excimer laser in dermatological disorders. 308-nm excimer laser has currently a verified efficacy in treating skin conditions such as vitiligo, psoriasis, atopic dermatitis, alopecia areata, allergic rhinitis, folliculitis, granuloma annulare, lichen planus, mycosis fungoides, palmoplantar pustulosis, pityriasis alba, CD30+ lympho proliferative disorder, leukoderma, prurigo nodularis, localized scleroderma and genital lichen sclerosus. Although the 308-nm excimer laser appears to act as a promising treatment modality in dermatology, further large-scale studies should be undertaken in order to fully affirm its safety profile considering the potential risk, however minimal, of malignancy, it may impose. PMID:25606333

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

Energy Technology Data Exchange (ETDEWEB)

Machida, Emi [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472 (Japan); Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ikenoue, Hiroshi [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395 (Japan)

2012-12-17

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

Electrodeless excimer laser; Laser a eccimeri senza elettrodi

Energy Technology Data Exchange (ETDEWEB)

Lisi, N. [ENEA, Divisione Nuovi Materiali, Centro Ricerche Casaccia, Rome (Italy)

2001-07-01

In this paper it is proposed how to build an excimer laser based on an electrodeless discharge (or Dielectric Barrier Discharge). Such laser could operate with a low energy per pulse (<100 mJ) and a high repetition rate (<100 kHz). The most relevant advantage an electrodeless DBD laser is the much longer gas mixture lifetime. This feature could allow the operation of a sealed laser emitting higher average power with respect to commercially available excimer lasers. Such discharge scheme could be advantageous in order to excite the F{sub 2} excimer molecule, whose emission wavelength in the VUV range (157 nm) at high reprate is particularly interesting in the micro-lithography field. [Italian] In questo documento viene proposto come costruire un laser a eccimeri basato su una scarica priva di elettrodi, o Dielectric Barrier Discharge. Tale laser puo' funzionare con una bassa energia per impulso (<100 mJ) ad alta frequenza di ripetizione (<100 kHz). Il vantaggio fondamentale di un laser a DBD e quindi privo di elettrodi e' la vita media della miscela gassosa molto piu' alta che potrebbe permettere alla camera laser di operare sigillata ad una potenza media superiore a quella dei laser a eccimeri attuali. Tale schema di pompaggio potrebbe essere particolarmente vantaggioso per eccitare la molecola eccimero F{sub 2} la cui lunghezza di emissione nel VUV (157 nm) ad elevata frequenza di ripetizione presenta un notevole interesse nel campo della produzione di microcircuiti.

Overview on the high power excimer laser technology

Science.gov (United States)

Liu, Jingru

2013-05-01

High power excimer laser has essential applications in the fields of high energy density physics, inertial fusion energy and industry owing to its advantages such as short wavelength, high gain, wide bandwidth, energy scalable and repetition operating ability. This overview is aimed at an introduction and evaluation of enormous endeavor of the international high power excimer laser community in the last 30 years. The main technologies of high power excimer laser are reviewed, which include the pumping source technology, angular multiplexing and pulse compressing, beam-smoothing and homogenous irradiation, high efficiency and repetitive operation et al. A high power XeCl laser system developed in NINT of China is described in detail.

[Glycosaminoglycans in subepithelial opacity after excimer laser keratectomy].

Science.gov (United States)

Nakayasu, K; Gotoh, T; Ishikawa, T; Kanai, A

1996-05-01

We evaluated histochemically the characteristics of glycosaminoglycans and proteoglycans in the corneal subepithelial opacity after excimer laser keratectomy on rabbit corneas. We also performed the same evaluations on the cornea after mechanical keratectomy. Twenty days after the operations, the area immediately subjacent to the epithelium showed strong staining with toluidine blue, alcian blue, and colloidal iron. However, after treatment with chondroitinase ABC or chondroitinase AC, alcian blue staining in this area decreased dramatically. Antilarge proteoglycan antibody also reacted strongly in this area. Histochemical and immunohistochemical examination of the cornea where mechanical keratectomy was done showed basically similar findings with the cornea of excimer laser keratectomy. These results suggest that large-molecula proteoglycans with chondroitine sulfate side chains become localized in the subepithelial area after two different kinds of keratectomies. We presume from histochemical and immunohistochemical observations that the subepithelial opacity observed after excimer laser keratectomy is not a special reaction to excimer laser but simply a corneal scar formed after stromal resection.

The Excimer Laser: Its Impact on Science and Industry

Science.gov (United States)

Basting, Dirk

2010-03-01

After the laser was demonstrated in 1960, 15 years were required to develop a practical method for extending laser emission into the UV: the Excimer laser. This historical review will describe the challenges with the new medium and provide an insight into the technological achievements. In the transition from Science to Industry it will be shown how start-ups successfully commercialized laboratory prototypes. The pioneers in this rapidly expanding field will be identified and the influence of government-funded research as well as the role of venture capital will be discussed. In scientific applications, the fields of photochemistry and material research were particularly stimulated by the advent of a reliable UV light source. Numerous industrial applications and worldwide research in novel applications were fueled In the early and mid 80's by progress in excimer laser performance and technology. The discovery of ablative photocomposition of polymer materials by Srinivasan at IBM opened the door to a multitude of important excimer applications. Micromachining with extreme precision with an excimer laser enabled the success of the inkjet printer business. Biological materials such as the human cornea can also be ``machined'' at 193nm, as proposed in 1983 by Trokel and Srinivasan. This provided the foundation of a new medical technology and an industry relying on the excimer laser to perform refractive surgery to correct vision Today, by far the largest use of the excimer laser is in photolithography to manufacture semiconductor chips, an application discovered by Jain at IBM in the early 80's. Moore's law of shrinking the size of the structure to multiply the number of transistors on a chip could not have held true for so long without the deep UV excimer laser as a light source. The presentation will conclude with comments on the most recent applications and latest market trends.

Excimer laser: a module of the alopecia areata common protocol.

Science.gov (United States)

McMichael, Amy J

2013-12-01

Alopecia areata (AA) is an autoimmune condition characterized by T cell-mediated attack of the hair follicle. The inciting antigenic stimulus is unknown. A dense perbulbar lymphocytic infiltrate and reproducible immunologic abnormalities are hallmark features of the condition. The cellular infiltrate primarily consists of activated T lymphocytes and antigen-presenting Langerhans cells. The xenon chloride excimer laser emits its total energy at the wavelength of 308 nm and therefore is regarded as a "super-narrowband" UVB light source. Excimer laser treatment is highly effective in psoriasis, another T cell-mediated disorder that shares many immunologic features with AA. The excimer laser is superior in inducing T cell apoptosis in vitro compared with narrowband UVB, with paralleled improved clinical efficacy. The excimer laser has been used successfully in patients with AA. In this context, evaluation of the potential benefit of 308-nm excimer laser therapy in the treatment of AA is clinically warranted. Herein, the use of a common treatment protocol with a specifically designed module to study the outcome of excimer laser treatment on moderate-to-severe scalp AA in adults is described.

Tunable excimer lasers

International Nuclear Information System (INIS)

Sze, R.C.

1990-01-01

The wide bandwidth nature of the rare-gas halide excimer transitions allow reasonable tuning of the laser oscillation wavelength that makes it useful for a number of applications. At the same time this wide bandwidth makes narrow band operation difficult and special techniques are needed to insure narrow frequency lasing as well as absolute frequency resettability. The author discusses briefly some of the classical frequency narrowing techniques and then goes on to some recent work that require lasers of special frequency characteristics for special applications including KrF laser fusion

308-nm excimer laser in endodontics

Science.gov (United States)

Liesenhoff, Tim

1992-06-01

Root canal preparation was performed on 20 extracted human teeth. After opening the coronal pulp, the root canals were prepared by 308 nm excimer laser only. All root canals were investigated under SEM after separation in the axial direction. By sagittal separation of the mandibles of freshly slaughtered cows, it was possible to get access to the tissues and irradiate under optical control. Under irradiation of excimer laser light, tissue starts to fluoresce. It was possible to demonstrate that each tissue (dentin, enamel, bone, pulpal, and connective tissue) has a characteristic spectral pattern. The SEM analyses showed that it is well possible to prepare root canals safely. All organic soft tissue has been removed by excimer laser irradiation. There was no case of via falsa. The simultaneous spectroscopic identification of the irradiated tissue provides a safe protection from overinstrumentation. First clinical trials on 20 patients suffering of chronical apical parodontitis have been carried out successfully.

Excimer Laser Curing Of Polymer Coatings

Science.gov (United States)

Klick, David; Akerman, M. Alfred; Paul, George L.; Supurovic, Darko; Tsuda, Haruki

1988-12-01

The use of the excimer laser as a source of energy for photo-assisted curing of industrial polymeric coatings was investigated. Presently, UV lamps are sometimes used to excite a photoinitiating molecule mixed with the starting monomers and oligomers of a coating. The resulting polymeric chain reaction multiplies the effect of the initial photons, making economical use of the light source. The high cost of laser photons may thus be justifiable if lasers provide advantages over lamps. A series of visibly transparent 7 μm coatings (a typical thickness for 'slick' magazine coatings) with various photoinitiators, monomers, and oligomers was illuminated with excimer laser light of various wavelengths, fluences, and pulse repetition rates. For the optimum parameters, it was found that the laser had large advantages in curing speed over existing UV lamp processes, due to its monochromaticity. Pigmented coatings (20 μm TiO2 mixtures typical of appliance or automotive finishes) are not easily cured with UV lamps due to the inability of light to penetrate the absorbing and scattering pigmented layer. However, economically-viable cure rates were achieved with certain photoinitiators using a tunable excimer-pumped dye laser. A prototype of such a laser suitable for factory use was built and used to cure these coatings. Results are scaled to a factory situation, and costs are calculated to show the advantages of the laser method over currently used processes.

Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films

Energy Technology Data Exchange (ETDEWEB)

Boukhicha, Rym, E-mail: rym.boukhicha@polytechnique.edu [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Charpentier, Coralie [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Prod' Homme, Patricia [Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Roca i Cabarrocas, Pere [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Lerat, Jean-François; Emeraud, Thierry [Photovoltaic Business Unit, Excico Group NV, Kempische Steenweg 305/2, B-3500 Hasselt (Belgium); Johnson, Erik [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France)

2014-03-31

We explore the influence of the sputtering deposition conditions on the outcome of an excimer laser anneal and chemical etching process with the goal of producing highly textured substrates for thin film silicon solar cells. Aluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency magnetron sputtering from a ceramic target at room temperature. The effects of the process pressure (0.11–1.2 Pa) and oxygen flow (0–2 sccm) on the optical and electrical properties of ZnO:Al thin films have been studied both before and after an excimer laser annealing treatment followed by a dilute HCl chemical etch. The as-deposited films varied from completely opaque to yellowish. Thin film laser annealing dramatically improves the optical properties of the most opaque thin films. After laser annealing at the optimum fluence, the average transmittance in the visible wavelength range was around 80% for most films, and reasonable electrical performance was obtained for the films deposited at lower pressures and without oxygen flux (7 Ω/□ for films of 1 μm). After etching, all films displayed a dramatic improvement in haze, but only the low pressure, low oxygen films retained acceptable electrical properties (< 11 Ω/□). - Highlights: • Al:ZnO thin films were deposited at room temperature. • The ZnO:Al films were excimer laser annealed and then wet-etched. • The optical and electrical properties were studied in details.

Laser spectroscopy of the products of photoevaporation with a short-wavelength (λ = 193 nm) excimer laser

International Nuclear Information System (INIS)

Gochelashvili, K S; Zemskov, M E; Evdokimova, O N; Mikhkel'soo, V T; Prokhorov, A M

1999-01-01

An excimer laser spectrometer was designed and constructed. It consists of a high-vacuum interaction chamber, a short-wavelength (λ = 193 nm) excimer ArF laser used for evaporation, a probe dye laser pumped by an XeCl excimer laser, and a system for recording a laser-induced fluorescence signal. This spectrometer was used to investigate nonthermal mechanisms of photoevaporation of a number of wide-gap dielectrics. (laser applications and other topics in quantum electronics)

Combination treatment with excimer laser and narrowband UVB light in vitiligo patients.

Science.gov (United States)

Shin, Sungsik; Hann, Seung-Kyung; Oh, Sang Ho

2016-01-01

For the treatment of vitiligo, narrowband UVB (NBUVB) light is considered the most effective for nonsegmental vitiligo, while excimer laser treatment is commonly used for localized vitiligo. However, treatment areas may potentially be missed with excimer laser treatment. We aimed to evaluate the effect of combinational treatment with NBUVB light and excimer laser on vitiligo. All patients were first treated with NBUVB; excimer laser was then applied in conjunction with NBUVB phototherapy due to a slow response or no further improvement with continuous NBUVB treatment alone. To minimize adverse effects, a fixed dose of NBUVB was administered, and the dose of excimer laser was increased based on patient response. Among 80 patients, 54 patients showed responses after combination with excimer laser; however, 26 patients (32.5%) showed no remarkable change after combination therapy. Of the 26 patients who showed no further response, 12 patients (46.1%) presented with vitiligo on the acral areas, which are known to the least responsive sites. Our study suggests that combined treatment of NBUVB and excimer laser in vitiligo may enhance the treatment response without remarkable side effects, therefore might also increase the compliance of the patients to the treatment. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Matrix metalloproteinase expression in excimer laser wounded rabbit corneas

Science.gov (United States)

Hahn, Taewon; Chamon, Wallace; Akova, Yonja; Stark, Walter J.; Stetler-Stevenson, William G.; Azar, Dimitri T.

1994-06-01

This study was performed to obtain information about matrix metalloproteinase (MMP) expression in excimer-wounded corneas and to determine whether MMPs expression correlates with the depth of the ablation. 6-mm excimer keratectomy (60 or 180 micrometers ) was performed using the 193-mm ArF excimer laser on 12 NZW rabbits. Corneas treated with mechanical epithelial debridement and untreated corneas served as controls. Rabbits were killed at 20 and 30 hr after laser ablation. Zymography after SDS extraction was performed on regenerated central epithelium and the central stroma to determine MMPs expression. We observed enzymatic activity of a 92 KDa band in the epithelium of excimer-ablated corneas but not in that following debridement wounds and untreated controls. The expression of the 92 KDa MMP was most pronounced with the deeper excimer ablation. A 72 KDa band of enzymatic activity present in the stroma of all treated and control eyes was also seen in the epithelium of excimer-ablated corneas. These proteolytic enzymes may play an important role in wound healing and remodelling after excimer keratectomy.

The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

International Nuclear Information System (INIS)

Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Italia, M.; Privitera, V.; Fortunato, G.; Cuscuna, M.; Mariucci, L.

2005-01-01

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of ∼4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA

Recent advances in excimer laser technology at Los Alamos

International Nuclear Information System (INIS)

Bigio, I.J.; Czuchlewski, S.; McCown, A.W.; Taylor, A.J.

1991-01-01

This paper reports that current research in excimer laser technology at Los Alamos progresses in two major areas: In the Bright Source program, the development of ultra-high brightness (sub-piosecond) laser systems, based on discharge -pumped excimer laser amplifiers, continues Recently the authors have completed rigorous measurements of the saturation parameter for ultra-short pulses. In the laser fusion program, implementation of the large KrF laser fusion amplifiers have been accompanied by numerous studies of the laser physics and kinetics of large e-beam pumped devices

High power excimer laser

International Nuclear Information System (INIS)

Oesterlin, P.; Muckenheim, W.; Basting, D.

1988-01-01

Excimer lasers emitting more than 200 W output power are not commercially available. A significant increase requires new technological efforts with respect to both the gas circulation and the discharge system. The authors report how a research project has yielded a laser which emits 0.5 kW at 308 nm when being UV preionized and operated at a repetition rate of 300 Hz. The laser, which is capable of operating at 500 Hz, can be equipped with an x-ray preionization module. After completing this project 1 kW output power will be available

Laser dentistry: A new application of excimer laser in root canal therapy

International Nuclear Information System (INIS)

Pini, R.; Salimbeni, R.; Vannini, M.; Barone, R.; Clauser, C.

1989-01-01

We report the first study of the application of excimer lasers in dentistry for the treatment of dental root canals. High-energy ultraviolet (UV) radiation emitted by an XeCl excimer laser (308 nm) and delivered through suitable optical fibers can be used to remove residual organic tissue from the canals. To this aim, UV ablation thresholds of dental tissues have been measured, showing a preferential etching of infiltrated dentin in respect to healthy dentin, at laser fluences of 0.5-1.5 J/cm 2 . This technique has been tested on extracted tooth samples, simulating a clinical procedure. Fibers of decreasing core diameters have been used to treat different sections of the root canal down to its apical portion, resulting in an effective, easy, and fast cleaning action. Possible advantages of excimer laser clinical applications in respect to usual procedures are also discussed

Advances in 193 nm excimer lasers for mass spectrometry applications

Science.gov (United States)

Delmdahl, Ralph; Esser, Hans-Gerd; Bonati, Guido

2016-03-01

Ongoing progress in mass analysis applications such as laser ablation inductively coupled mass spectrometry of solid samples and ultraviolet photoionization mediated sequencing of peptides and proteins is to a large extent driven by ultrashort wavelength excimer lasers at 193 nm. This paper will introduce the latest improvements achieved in the development of compact high repetition rate excimer lasers and elaborate on the impact on mass spectrometry instrumentation. Various performance and lifetime measurements obtained in a long-term endurance test over the course of 18 months will be shown and discussed in view of the laser source requirements of different mass spectrometry tasks. These sampling type applications are served by excimer lasers delivering pulsed 193 nm output of several mJ as well as fast repetition rates which are already approaching one Kilohertz. In order to open up the pathway from the laboratory to broader market industrial use, sufficient component lifetimes and long-term stable performance behavior have to be ensured. The obtained long-term results which will be presented are based on diverse 193 nm excimer laser tube improvements aiming at e.g. optimizing the gas flow dynamics and have extended the operational life the laser tube for the first time over several billion pulses even under high duty-cycle conditions.

Treatment of alopecia areata with the 308-nm xenon chloride excimer laser: case report of two successful treatments with the excimer laser.

Science.gov (United States)

Gundogan, Cuneyt; Greve, Bärbel; Raulin, Christian

2004-01-01

Alopecia areata is a common disease of unknown etiology; it causes significant cosmetic and psycho-social distress for most of the people it affects. We report on an innovative form of treatment in two patients with typical alopecia areata on the capillitium. We successfully treated two patients whose alopecia areata had worsened progressively for 3 and 14 weeks. The treatment involved the use of a 308 nm xenon chloride excimer laser (dosage 300-2,300 mJ/cm(2) per session). After 11 and 12 sessions within a 9-week and 11-week period, the entire affected focus showed homogenous and thick regrowth. No relapse was observed during the follow-up period of 5 and 18 months. The use of the excimer laser is an effective, elegant, and safe means of treatment and has good tolerability. Analogous to topical treatment of alopecia areata, the immunosuppressive mechanism of the excimer laser can be interpreted as an induction of T-cell apoptosis. This new means of treatment has yet to be discussed in medical literature. Further studies with greater numbers are needed to assess its potential more precisely and evaluate the excimer laser in treating alopecia areata. Copyright 2004 Wiley-Liss, Inc.

Myopic keratomileusis by excimer laser on a lathe.

Science.gov (United States)

Ganem, S; Aron-Rosa, D; Gross, M; Rosolen, S

1994-01-01

We designed an excimer laser keratomileusis delivery system to increase the regularity of the refractive cut surface and allow greater precision in the level and shape of the ablated zone. A parallel faced corneal disc was produced by microkeratectomy from six human eyes and surgical keratectomy in 12 beagle corneas. A 193-nanometer excimer laser that was used to project an oval beam onto the corneal disc was rotated on a flat surface to ensure overlapping of the ovally ablated areas between pulses. Electron microscopy of eye bank lenticules demonstrated a circular smooth regularly concave ablation zone. Histological examination of nine clear corneas confirmed thinning of the stroma without fibroblastic reaction and no epithelial hypertrophy. Mean preoperative corneal power of 43.15 +/- 2.18 decreased postoperatively to 33.61 +/- 2.34. The new technique of excimer laser keratomileusis has the advantage of a cut surface smoother and the clear zone is devoid of the stepwise concavity and irregularity seen in diaphragm based photoablation delivery systems.

Optical design of high power excimer laser system

International Nuclear Information System (INIS)

Zhang Yongsheng; Zhao Jun; Ma Lianying; Yi Aiping; Liu Jingru

2011-01-01

Image relay and angular multiplexing,which should be considered together in the design of high power excimer laser system, is reviewed. It's important to select proper illumination setup and laser beam shaping techniques. Given the complex and special angular multiplexing scheme in high power excimer laser systems, some detailed conceptual layout schemes are given in the paper. After a brief description of lens array and reflective telescope objective, which combine the incoming beams to a common focus, a new schematic layout which uses the final targeting optics and one optical delay line array, to realize multiplexing and de-multiplexing simultaneously is first proposed in the paper. (authors)

Excimer laser technology

International Nuclear Information System (INIS)

Mace, P.N.

1980-01-01

Scaling presently available excimer laser systems to lasers designed to operate at high average power and high pulse repetition rates for long periods of time requires advances in many areas of engineering technology. For economical application to industrial processes, the efficiency must be increased. This leads to more stringent requirements on preionization techniques, energy delivery systems, and system chemistry. Long life operation (> 10 9 to 10 10 pulses) requires development of new pulse power components, optical elements and flow system components. A broad-based program underway at the Los Alamos Scientific Laboratory is addressing these key technology issues, with the help of advanced component and systems development programs in industry. A prototype XeCl laser meeting all requirements for efficiency, system performance and life is scheduled for completion in 1984

Excimer laser processing of ZnO thin films prepared by the sol-gel process

International Nuclear Information System (INIS)

Winfield, R.J.; Koh, L.H.K.; O'Brien, Shane; Crean, Gabriel M.

2007-01-01

ZnO thin films were prepared on soda-lime glass from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C 2 H 3 O 2 ) 2 ], monoethanolamine [H 2 NC 2 H 4 OH] and isopropanol. The deposited films were dried at 50 and 300 deg. C. X-ray analysis showed that the films were amorphous. Laser annealing was performed using an excimer laser. The laser pulse repetition rate was 25 Hz with a pulse energy of 5.9 mJ, giving a fluence of 225 mJ cm -2 on the ZnO film. Typically, five laser pulses per unit area of the film were used. After laser processing, the hexagonal wurtzite phase of zinc oxide was observed from X-ray diffraction pattern analysis. The thin films had a transparency of greater than 70% in the visible region. The optical band-gap energy was 3.454 eV. Scanning electron microscopy and profilometry analysis highlighted the change in morphology that occurred as a result of laser processing. This comparative study shows that our sol-gel processing route differs significantly from ZnO sol-gel films prepared by conventional furnace annealing which requires temperatures above 450 deg. C for the formation of crystalline ZnO

Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

International Nuclear Information System (INIS)

Gontad, F.; Conde, J.C.; Filonovich, S.; Cerqueira, M.F.; Alpuim, P.; Chiussi, S.

2013-01-01

We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p + -nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm 2 is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm 2 promote partial crystallization of the amorphous structures

Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

Energy Technology Data Exchange (ETDEWEB)

Gontad, F., E-mail: fran_gontad@yahoo.es [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Conde, J.C. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Filonovich, S.; Cerqueira, M.F.; Alpuim, P. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); Chiussi, S. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain)

2013-06-01

We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p{sup +}-nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm{sup 2} is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm{sup 2} promote partial crystallization of the amorphous structures.

Excimer laser irradiation of metal surfaces

Science.gov (United States)

Kinsman, Grant

In this work a new method of enhancing CO2 laser processing by modifying the radiative properties of a metal surface is studied. In this procedure, an excimer laser (XeCl) or KrF) exposes the metal surface to overlapping pulses of high intensity, 10(exp 8) - 10(exp 9) W cm(exp -2), and short pulse duration, 30 nsec FWHM (Full Width Half Maximum), to promote structural and chemical change. The major processing effect at these intensities is the production of a surface plasma which can lead to the formation of a laser supported detonation wave (LSD wave). This shock wave can interact with the thin molten layer on the metal surface influencing to a varying degree surface oxidation and roughness features. The possibility of the expulsion, oxidation and redeposition of molten droplets, leading to the formation of micron thick oxide layers, is related to bulk metal properties and the incident laser intensity. A correlation is found between the expulsion of molten droplets and a Reynolds number, showing the interaction is turbulent. The permanent effects of these interactions on metal surfaces are observed through scanning electron microscopy (SEM), transient calorimetric measurements and Fourier transform infrared (FTIR) spectroscopy. Observed surface textures are related to the scanning procedures used to irradiate the metal surface. Fundamental radiative properties of a metal surface, the total hemispherical emissivity, the near-normal spectral absorptivity, and others are examined in this study as they are affected by excimer laser radiation. It is determined that for heavily exposed Al surface, alpha' (10.6 microns) can be increased to values close to unity. Data relating to material removal rates and chemical surface modification for excimer laser radiation is also discussed. The resultant reduction in the near-normal reflectivity solves the fundamental problem of coupling laser radiation into highly reflective and conductive metals such as copper and aluminum. The

Excimer laser for the treatment of psoriasis: safety, efficacy, and patient acceptability

Directory of Open Access Journals (Sweden)

Abrouk M

2016-12-01

Full Text Available Michael Abrouk,1 Ethan Levin,2 Merrick Brodsky,1 Jessica R Gandy,1 Mio Nakamura,2 Tian Hao Zhu,3 Benjamin Farahnik,4 John Koo,2 Tina Bhutani2 1Irvine School of Medicine, Irvine, 2Department of Dermatology, Psoriasis and Skin Treatment Center, University of California, San Francisco, 3Department of Dermatology, University of Southern California Keck School of Medicine, Los Angeles, CA, 4Department of Dermatology, University of Vermont College of Medicine, Burlington, VT, USA Introduction: The 308 nm excimer laser is a widely used device throughout the field of dermatology for many diseases including psoriasis. Although the laser has demonstrated clinical efficacy, there is a lack of literature outlining the safety, efficacy, and patient acceptability of the excimer laser. Methods: A literature search on PubMed was used with combinations of the terms “excimer”, “excimer laser”, “308 nm”, “psoriasis”, “protocol”, “safety”, “efficacy”, acceptability”, “side effects”, and “dose”. The search results were included if they contained information pertaining to excimer laser and psoriasis treatment and description of the safety, efficacy, and patient acceptability of the treatment. Results: The 308 nm excimer laser is generally safe and well tolerated with minimal side effects including erythema, blistering, and pigmentary changes. It has a range of efficacies depending on the protocol used with several different treatment protocols, including the induration protocol, the minimal erythema dose protocol, and the newer minimal blistering dose protocol. Conclusion: Although the excimer laser is not a first-line treatment, it remains an excellent treatment option for psoriasis patients and has been demonstrated to be an effective treatment with little to no side effects. Keywords: excimer, laser, 308 nm, psoriasis, safety, efficacy

Laser drilling of metals with a XeCl excimer laser

NARCIS (Netherlands)

Schoonderbeek, A.

2005-01-01

This thesis is about laser drilling with a unique excimer laser with a nearly diffraction-limited beam and relatively long optical pulse duration of 175 ns. The combination of high processing speed and high processing quality suitable for industrial applications can be obtained because the excellent

Alkali-vapor laser-excimer pumped alkali laser

International Nuclear Information System (INIS)

Yue Desheng; Li Wenyu; Wang Hongyan; Yang Zining; Xu Xiaojun

2012-01-01

Based on the research internal and overseas, the principle of the excimer pumped alkali laser (XPAL) is explained, and the advantages and disadvantages of the XPAL are analyzed. Taking into consideration the difficulties that the diode pumped alkali laser (DPAL) meets on its development, the ability to solve or avoid these difficulties of XPAL is also analyzed. By summing up the achievements of the XPAL, the possible further prospect is proposed. The XPAL is of possibility to improve the performance of the DPAL. (authors)

Nano-crystallization in ZnO-doped In_2O_3 thin films via excimer laser annealing for thin-film transistors

International Nuclear Information System (INIS)

Fujii, Mami N.; Ishikawa, Yasuaki; Bermundo, Juan Paolo Soria; Uraoka, Yukiharu; Ishihara, Ryoichi; Cingel, Johan van der; Mofrad, Mohammad R. T.; Kawashima, Emi; Tomai, Shigekazu; Yano, Koki

2016-01-01

In a previous work, we reported the high field effect mobility of ZnO-doped In_2O_3 (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii et al., Appl. Phys. Lett. 102, 122107 (2013)]. However, a deeper understanding of the effect of ELA on the IZO film characteristics based on crystallinity, carrier concentrations, and optical properties is needed to control localized carrier concentrations for fabricating self-aligned structures in the same oxide film and to adequately explain the physical characteristics. In the case of as-deposited IZO film used as the channel, a high carrier concentration due to a high density of oxygen vacancies was observed; such a film does not show the required TFT characteristics but can act as a conductive film. We achieved a decrease in the carrier concentration of IZO films by crystallization using ELA. This means that ELA can form localized conductive or semi-conductive areas on the IZO film. We confirmed that the reason for the carrier concentration decrease was the decrease of oxygen-deficient regions and film crystallization. The annealed IZO films showed nano-crystalline phase, and the temperature at the substrate was substantially less than the temperature limit for flexible films such as plastic, which is 50°C. This paves the way for the formation of self-aligned structures and separately formed conductive and semi-conductive regions in the same oxide film.

Treatment of oral lichen planus using 308-nm excimer laser.

Science.gov (United States)

Liu, Wei-Bing; Sun, Li-Wei; Yang, Hua; Wang, Yan-Fei

2017-09-01

Oral lichen planus (OLP) is a chronic inflammatory disease, has prolonged courses, repeated attacks and resistance to treatment. The traditional narrow spectrum UVB treatment has an established efficacy on skin lichen planus, and high safety. However, most of ultraviolet phototherapy devices have a huge volume, thereby cannot be used in the treatment of OLP. Lymphocytic infiltration is evident in the lesions of lichen planus, and the direct irradiation of 308-nm excimer laser can induce apoptosis of the T lymphocytes in skin lesions, thereby has a unique therapeutic effect on the diseases involving T lymphocytes. This study aims to investigate the efficacy of 308-nm excimer laser in the treatment of OLP. A total of six OLP patients were enrolled into this study, and further pathological diagnosis was conducted, then 308-nm excimer laser was used in the treatment. The efficacy of 308-nm excimer laser in the treatment of OLP was satisfactory. The clinical symptoms of five patients were significantly improved. In two patients, the erosion surface based on congestion and the surrounding white spots completely disappeared, and clinical recovery was achieved. Three patients achieved partial remission, that is, the erosion surface healed, congestion and white spot area shrunk by more than 1/2 of the primary skin lesions. In the remaining one patient, the erosion surface had not completely healed after treatment, and congestion and white spot area shrunk by less than 1/2 of the primary skin lesions. Only one patients had developed mild pain during the treatment, and this symptom alleviated by itself. The 308-nm excimer laser therapy can serve as a safe and effective treatment for OLP. © 2017 Wiley Periodicals, Inc.

Photochemical and Spectroscopic Effects Resulting from Excimer Laser Excitation.

Science.gov (United States)

Wang, Xuan Xiao

I. Photochemical production of ozone from pure oxygen using excimer lasers. Production of ozone was observed from experiments when oxygen was under a broadband pulsed KrF laser radiation. The production process was found to be autocatalytic. Mechanisms for the ozone formation were proposed. Experimental results over a range of oxygen pressure and laser pulse energy (irradiance) provided evidences in favor of the proposed mechanisms. Experiments were also numerically modeled. Good agreement between the experimental and the numerical results were observed, which provided further evidence to support the proposed mechanisms. Cross sections for some photochemical processes in the mechanisms were estimated. Production of ozone from pure oxygen under a ArF excimer laser radiation (193 nm) was also studied and numerically modeled. Effects of ambient water vapor on ozone production were investigated. Experimental results showed a fast ozone destruction when water vapor was present in the cell. However, numerical results obtained from the well-known OH and HO _2 chain ozone destruction mechanism predicted a slower ozone destruction. Possible reasons for the discrepancy are discussed. II. Resonance-enhanced multiphoton ionization of N_2 at 193 and 248 nm detected by N_sp{2}{+} fluorescence. Using a broadband excimer laser operating at 193 and 248 nm multiphoton ionization at high pressures in air and pure nitrogen has been detected by fluorescence from N_sp{2}{+} in the B-X firstnegative system. Measurements of the fluorescence intensity as a function of beam irradiance indicate resonance in N_2 at the energy of two 193 nm photons (2 + 1 REMPI) and three 248 nm photons (3 + 1 REMPI). Possible intermediate states are discussed. III. Excimer laser-induced fluorescence from some organic solvents. Fluorescence was observed from vapor phase benzene, toluene, p-xylene, benzyl chloride, methyl benzoate, acetic anhydride, ether, methanol, ethyl acetone, acetone, and 2-butanone using

Calculation of high-pressure argon plasma parameters produced by excimer laser

International Nuclear Information System (INIS)

Tsuda, Norio; Yamada, Jun

2000-01-01

When a XeCl excimer laser light was focused in a high-pressure argon gas up to 150 atm, a dense plasma developed not only backward but also forward. It is important to study on the electron density and temperature of the laser-induced plasma in the high-pressure gas. The electron density and temperature in high-pressure argon plasma produced by XeCl excimer laser has been calculated and compared with the experimental data. (author)

The effect of excimer laser keratectomy on corneal glutathione-related enzymes in rabbits.

Science.gov (United States)

Bilgihan, Ayşe; Bilgihan, Kamil; Yis, Ozgür; Yis, Nilgün Safak; Hasanreisoglu, Berati

2003-04-01

Glutathione related enzymes are involved in the metabolism and detoxification of cytotoxic and carcinogenic compounds as well as reactive oxygen species. Excimer laser is a very useful tool for the treatment of refractive errors and removing superficial corneal opacities. Previous studies have shown that excimer laser may initiate free radical formation in the cornea. In the present study, we evaluated the effect of excimer laser keratectomy on corneal glutathione-related enzyme activities in rabbits. Animals were divided into five groups, and all groups were compared with the controls (group 1), after epithelial scraping (group 2), transepithelial photorefractive keratectomy (PRK) (group 3), traditional PRK (group 4) and deep traditional PRK (group 5). Corneal glutathione peroxidase (GPx), glutathione S-transferase (GST) and glutathione reductase (GR) activities were measured after 24h. Corneal GPx and GR activities significantly decreased only in group 5 (p < 0.05) but GST activities significantly decreased in all groups when compared with the control group (p < 0.05). In conclusion, excimer laser inhibits the glutathione dependent defense system in the cornea, this effect becomes more prominent after high doses of excimer laser energy and antioxidants may be useful to reduce free radical mediated complications.

308-nm excimer laser for the treatment of alopecia areata.

Science.gov (United States)

Al-Mutairi, Nawaf

2007-12-01

Alopecia areata is loss of hair from localized or diffuse areas of hair-bearing area of the skin. Recently there are reports of efficacy of the 308-nm excimer radiation for this condition. To study the effect of the 308-nm excimer laser in the treatment of alopecia areata. Eighteen patients with 42 recalcitrant patches (including 1 adult with alopecia totalis) were enrolled in this study. The lesions were treated with the 308-nm excimer laser twice a week for a period of 12 weeks; one lesion on each patient was left as a control for comparison. There were 7 males and 11 females in this study. Regrowth of hair was observed in 17 (41.5%) patches. Thirteen of the 18 lesions in scalp showed a complete regrowth of hair. The extremity regions failed to show a response. Atopic diatheses had an unfavorable effect on the outcome in our patients. The 308-nm excimer laser is an effective therapeutic option for patchy alopecia areata of the scalp and for some cases with patchy alopecia areata of the beard area. It does not work for patchy alopecia areata of the extremities.

Time Evolution of the Excimer State of a Conjugated Polymer Laser

Directory of Open Access Journals (Sweden)

Wafa Musa Mujamammi

2017-11-01

Full Text Available An excited dimer is an important complex formed in nano- or pico-second time scales in many photophysics and photochemistry applications. The spectral and temporal profile of the excimer state of a laser from a new conjugated polymer, namely, poly (9,9-dioctylfluorenyl-2,7-diyl (PFO, under several concentrations in benzene were investigated. These solutions were optically pumped by intense pulsed third-harmonic Nd:YAG laser (355-nm to obtain the amplified spontaneous emission (ASE spectra of a monomer and an excimer with bandwidths of 6 and 7 nm, respectively. The monomer and excimer ASEs were dependent on the PFO concentration, pump power, and temperature. Employing a sophisticated picosecond spectrometer, the time evolution of the excimer state of this polymer, which is over 400 ps, can be monitored.

KrF excimer laser precision machining of hard and brittle ceramic biomaterials

International Nuclear Information System (INIS)

Huang, Yao-Xiong; Lu, Jian-Yi; Huang, Jin-Xia

2014-01-01

KrF excimer laser precision machining of porous hard–brittle ceramic biomaterials was studied to find a suitable way of machining the materials into various desired shapes and sizes without distorting their intrinsic structure and porosity. Calcium phosphate glass ceramics (CPGs) and hydroxyapatite (HA) were chosen for the study. It was found that KrF excimer laser can cut both CPGs and HA with high efficiency and precision. The ablation rates of CPGs and HA are respectively 0.081 µm/(pulse ⋅ J cm −2 ) and 0.048 µm/(pulse ⋅ J cm −2 ), while their threshold fluences are individually 0.72 and 1.5 J cm −2 . The cutting quality (smoothness of the cut surface) is a function of laser repetition rate and cutting speed. The higher the repetition rate and lower the cutting speed, the better the cutting quality. A comparison between the cross sections of CPGs and HA cut using the excimer laser and using a conventional diamond cutting blade indicates that those cut by the excimer laser could retain their intrinsic porosity and geometry without distortion. In contrast, those cut by conventional machining had distorted geometry and most of their surface porosities were lost. Therefore, when cutting hard–brittle ceramic biomaterials to prepare scaffold and implant or when sectioning them for porosity evaluation, it is better to choose KrF excimer laser machining. (paper)

Analyses of surface coloration on TiO2 film irradiated with excimer laser

International Nuclear Information System (INIS)

Zheng, H.Y.; Qian, H.X.; Zhou, W.

2008-01-01

TiO 2 film of around 850 nm in thickness was deposited on a soda-lime glass by PVD sputtering and irradiated using one pulse of krypton-fluorine (KrF) excimer laser (wavelength of 248 nm and pulse duration of 25 ns) with varying fluence. The color of the irradiated area became darker with increasing laser fluence. Irradiated surfaces were characterized using optical microscopy, scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Surface undergoes thermal annealing at low laser fluence of 400 and 590 mJ/cm 2 . Microcracks at medium laser fluence of 1000 mJ/cm 2 are attributed to surface melting and solidification. Hydrodynamic ablation is proposed to explain the formation of micropores and networks at higher laser fluence of 1100 and 1200 mJ/cm 2 . The darkening effect is explained in terms of trapping of light in the surface defects formed rather than anatase to rutile phase transformation as reported by others. Controlled darkening of TiO 2 film might be used for adjustable filters

Comparative study of excimer and erbium:YAG lasers for ablation of structural components of the knee

Science.gov (United States)

Vari, Sandor G.; Shi, Wei-Qiang; van der Veen, Maurits J.; Fishbein, Michael C.; Miller, J. M.; Papaioannou, Thanassis; Grundfest, Warren S.

1991-05-01

This study was designed to compare the efficiency and thermal effect of a 135 ns pulsed-stretched XeCl excimer laser (308 nm) and a free-running Erbium:YAG laser (2940 nm) with 200 microsecond(s) pulse duration for ablation of knee joint structures (hyaline and fibrous cartilage, tendon and bone). The radiant exposure used for tissue ablation ranged from 2 to 15 J/cm2 for the XeCl excimer and from 33 to 120 J/cm2 for Er:YAG. The excimer and Er:YAG lasers were operated at 4 and 5 Hz respectively. The ablative laser energy was delivered to tissue through fibers. Ablation rates of soft tissues (hyaline and fibrous cartilage, tendon) varied from 8.5 to 203 micrometers /pulse for excimer and from 8.2 to 273 micrometers /pulse for Er:YAG lasers. Ablation rates of soft tissues are linearly dependent on the radiant exposure. Within the range of parameters tested all the tissues except the bone could be rapidly ablated by both lasers. Bone ablation was much less efficient, requiring 15 J/cm2 and 110 J/cm2 radiant exposure for excimer and Er:YAG lasers to ablate 9.5 and 8.2 micrometers tissue per pulse. However, excimer laser ablation produced less thermal damage in the tissues studied compared to Er:YAG at the same laser parameters. The authors conclude that both lasers are capable of efficient knee joint tissue ablation. XeCl excimer laser requires an order of magnitude less energy than Er:YAG laser for comparable tissue ablation.

3-D ASE calculation for high power output XeCl excimer lasers

International Nuclear Information System (INIS)

Tu Qinfen; Zhang Jianquan; Wu Baosheng

1996-01-01

The 3-dimensional ASE calculation for electron beam pumping XeCl excimer laser is presented by M-C method. In the model wall-reflected ASE is included. This calculation also includes non-saturable absorption and mirror that reflect ASE flux back into the active gain medium. Results show optimum scaling of injected flux. It can provide theoretical basis and experimental references for experiments on excimer lasers, and be extrapolated to any other type of laser

Excimer pulsed laser deposition and annealing of YSZ nanometric films on Si substrates

International Nuclear Information System (INIS)

Caricato, A.P.; Barucca, G.; Di Cristoforo, A.; Leggieri, G.; Luches, A.; Majni, G.; Martino, M.; Mengucci, P.

2005-01-01

We report experimental results obtained for electrical and structural characteristics of yttria-stabilised zirconia (YSZ) thin films deposited by pulsed laser deposition (PLD) on Si substrates at room temperature. Some samples were submitted to thermal treatments in different ambient atmospheres (vacuum, N 2 and O 2 ) at a moderate temperature. The effects of thermal treatments on the film electrical properties were studied by C-V and I-V measurements. Structural characteristics were obtained by X-ray diffraction (XRD), X-ray reflectivity (XRR) and transmission electron microscopy (TEM) analyses. The as-deposited film was amorphous with an in-depth non-uniform density. The annealed films became polycrystalline with a more uniform density. The sample annealed in O 2 was uniform over all the thickness. Electrical characterisation showed large hysteresis, high leakage current and positive charges trapped in the oxide in the as-deposited film. Post-deposition annealing, especially in O 2 atmosphere, improved considerably the electrical properties of the films

Microencapsulation of silicon cavities using a pulsed excimer laser

KAUST Repository

Sedky, Sherif M.

2012-06-07

This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal required for the migration process, the proposed technique uses short excimer laser pulses (24ns), focused onto an area of 23mm 2, to locally heat the top few microns of the substrate, while the bulk substrate remains near ambient temperature. The treatment can be applied to selected regions of the substrate, without the need for special surface treatments or a controlled environment. This work investigates the effect of varying the laser pulse energy from 400 mJ cm 2to 800 mJ cm 2, the pulse rate from 1Hz to 50Hz and the pulse count from 200 to 3000 pulses on sealing microfabricated cavities in silicon. An analytical model for the effect of holes on the surface temperature distribution is derived, which shows that much higher temperatures can be achieved by increasing the hole density. A mechanism for sealing the cavities is proposed, which indicates how complete sealing is feasible. © 2012 IOP Publishing Ltd.

Investigation on gas medium parameters for an ArF excimer laser through orthogonal experimental design

Science.gov (United States)

Song, Xingliang; Sha, Pengfei; Fan, Yuanyuan; Jiang, R.; Zhao, Jiangshan; Zhou, Yi; Yang, Junhong; Xiong, Guangliang; Wang, Yu

2018-02-01

Due to complex kinetics of formation and loss mechanisms, such as ion-ion recombination reaction, neutral species harpoon reaction, excited state quenching and photon absorption, as well as their interactions, the performance behavior of different laser gas medium parameters for excimer laser varies greatly. Therefore, the effects of gas composition and total gas pressure on excimer laser performance attract continual research studies. In this work, orthogonal experimental design (OED) is used to investigate quantitative and qualitative correlations between output laser energy characteristics and gas medium parameters for an ArF excimer laser with plano-plano optical resonator operation. Optimized output laser energy with good pulse to pulse stability can be obtained effectively by proper selection of the gas medium parameters, which makes the most of the ArF excimer laser device. Simple and efficient method for gas medium optimization is proposed and demonstrated experimentally, which provides a global and systematic solution. By detailed statistical analysis, the significance sequence of relevant parameter factors and the optimized composition for gas medium parameters are obtained. Compared with conventional route of varying single gas parameter factor sequentially, this paper presents a more comprehensive way of considering multivariables simultaneously, which seems promising in striking an appropriate balance among various complicated parameters for power scaling study of an excimer laser.

Excimer lasers utilizing XeF and XeCl molecules

Energy Technology Data Exchange (ETDEWEB)

Bychkov, Yu I; Konovalov, I N; Losev, V F; Mesyats, G A; Ryzhov, V V; Tarasenko, V F; Fedorov, A I; Shemyakina, S B; Yastremskii, A G

1978-12-01

The results are given of an experimental and theoretical study of XeF (wavelength approx. 350 nm) and XeCl (wavelength approx. 308 nm) lasers excited by an electron beam, a discharge stabilized by an electron beam, and a rapid discharge. These lasers are representative of ones employing halides of noble gases, which are the most powerful sources of stimulated emission in the uv region. The XeCl laser is shown to have good emission characteristics with various methods of excitation. An analysis of the kinetics of processes in the plasma of lasers utilizing halides of noble gases showed that the main channel for the transfer of the beam's energy to the formation of excimer molecules is the ionic channel. An efficiency of about 2.6 percent and a specific radiant energy of 10 J.l/sup -1/ showed that XeCl* is one of the most effective excimer molecules.

Nano-crystallization in ZnO-doped In{sub 2}O{sub 3} thin films via excimer laser annealing for thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Fujii, Mami N., E-mail: f-mami@ms.naist.jp; Ishikawa, Yasuaki; Bermundo, Juan Paolo Soria; Uraoka, Yukiharu [Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan); Ishihara, Ryoichi; Cingel, Johan van der; Mofrad, Mohammad R. T. [Delft University of Technology, Feldmannweg 17, P.O. Box 5053, 2600 GB Delft (Netherlands); Kawashima, Emi; Tomai, Shigekazu; Yano, Koki [Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, Chiba, 299-0293 (Japan)

2016-06-15

In a previous work, we reported the high field effect mobility of ZnO-doped In{sub 2}O{sub 3} (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii et al., Appl. Phys. Lett. 102, 122107 (2013)]. However, a deeper understanding of the effect of ELA on the IZO film characteristics based on crystallinity, carrier concentrations, and optical properties is needed to control localized carrier concentrations for fabricating self-aligned structures in the same oxide film and to adequately explain the physical characteristics. In the case of as-deposited IZO film used as the channel, a high carrier concentration due to a high density of oxygen vacancies was observed; such a film does not show the required TFT characteristics but can act as a conductive film. We achieved a decrease in the carrier concentration of IZO films by crystallization using ELA. This means that ELA can form localized conductive or semi-conductive areas on the IZO film. We confirmed that the reason for the carrier concentration decrease was the decrease of oxygen-deficient regions and film crystallization. The annealed IZO films showed nano-crystalline phase, and the temperature at the substrate was substantially less than the temperature limit for flexible films such as plastic, which is 50°C. This paves the way for the formation of self-aligned structures and separately formed conductive and semi-conductive regions in the same oxide film.

Assessment of the suitability of excimer lasers in treating onychomycosis

International Nuclear Information System (INIS)

Kymplová, Jaroslava; Dušek, Karel; Jelínek, Miroslav; Urzová, Jana; Mikšovský, Jan; Bauerová, Lenka

2014-01-01

Since it is known that UV-C radiation kills fungus, we wanted to verify the hypothesis that the use of excimer laser could be an alternative method for treating onychomycosis - nail fungus. The aim of the first stage of this work was to determine the transmission, reflection and absorption of nails. In the following stage we focused on irradiation of fungi. Our final task is to assess whether it is possible to determine the parameters of radiation (a total dose,a dose per pulse frequency, a repetition rate, a number of pulses) for which the elimination of fungi would be the most effective but without damaging the nail and soft tissue underneath it. The results so far have showed that UV-C radiation does not pass through a fingernail to such an extent that it could damage the soft tissue beneath it. Fungi are destroyed by the application of only small doses of radiation using the excimer laser. Additional measurements will be required to determine the modulation parameters of the excimer laser radiation for the treatment of onychomycosis.

The argon excimer laser

International Nuclear Information System (INIS)

Wrobel, W.G.

1981-02-01

The electron-beam-pumped argon eximer laser is investigated and tuned for the first time. The electron beam is generated by means of an improved coaxial field emmision diode in which argon gas is excited with power densities of 0.3 GW/cm 3 for 18 ns. The processes in the excited gas of 20 to 65 bar are described in the context of a kinetic model as a sequence of stationary states. Investigations of the amplified spontaneous emission (superfluorescence) confirm the predictions of this model. Only the absorption due to the excited Ar atoms is anomalously high. Reproducible operation of the argon eximer laser was achieved in a wide pressure range with various resonator arrangements. The wavelength of this shortest wavelength of this shortest wavelength excimer laser is 126 nm, the laser line width approx. 1.7 nm, the pulse length 7 to 13 ns, and the laser power 250 kW. The laser emission is tuned from 123.2 nm to 128.4 nm by two different methods (diffraction grating and prism). This tunable laser is thus the one with the shortest wavelength at present. Its line width is 0.25 to 0.4 nm, and the power ue 1.7 kW. (orig.)

Surface modification of polyethylene terephthalate using excimer and CO2 laser

International Nuclear Information System (INIS)

Mirzadeh, H.; Dadsetan, M.

2002-01-01

Complete text of publication follows. Attempts have been made to evaluate microstructuring which affects cell behaviour, physical and chemical changes produced by laser irradiation onto the polyethylene terephthalate (PET) surface. The surfaces of PET were irradiated using the CO 2 laser and KrF excimer pulsed laser. The changes in chemical and physical properties of the irradiated PET surface were investigated by attenuated total reflectance infrared spectroscopy (ATR-IR) and contact angle measurements. ATR-IR Spectra showed that the crystallinity in the surface region decreased due to the CO 2 laser and excimer laser irradiation. Scanning electron microscopy observations showed that the morphology of the laser irradiated PET surface changed due to laser irradiation. The results obtained from the cell behaviour studies revealed that changes of physico-chemical properties of the laser treated PET film have significantly changed in comparison with the unmodified PET

Surface processing by high power excimer laser

Energy Technology Data Exchange (ETDEWEB)

Stehle, M [SOPRA, 92 - Bois-Colombes (France)

1995-03-01

Surface processing with lasers is a promising field of research and applications because lasers bring substantial advantages : laser beams work at distance, laser treatments are clean in respect of environment consideration and they offer innovative capabilities for surface treatment which cannot be reached by other way. Excimer lasers are pulsed, gaseous lasers which emit in UV spectral range - the most common are XeCl (308 nm), KrF (248 nm), ArF (193 nm). From 1980 up to 1994, many of them have been used for research, medical and industrial applications such as spectroscopy, PRK (photo-refractive keratotomy) and micro-machining. In the last six years, from 1987 up to 1993, efforts have been done in order to jump from 100 W average power up to 1 kW for XeCl laser at {lambda} = 308 nm. It was the aim of AMMTRA project in Japan as EU205 and EU213 Eureka projects in Europe. In this framework, SOPRA developed VEL (Very large Excimer Laser). In 1992, 1 kW (10 J x 100 Hz) millstone has been reached for the first time, this technology is based on X-Ray preionization and large laser medium (5 liters). Surface treatments based on this laser source are the main purpose of VEL Lasers. Some of them are given for instance : (a) Turbine blades made with metallic substrate and ceramic coatings on the top, are glazed in order to increase corrosion resistance of ceramic and metal sandwich. (b) Selective ablation of organic coatings deposited on fragile composite material is investigated in Aerospace industry. (c) Chock hardening of bulk metallic materials or alloys are investigated for automotive industry in order to increase wear resistance. (d) Ablation of thin surface oxides of polluted steels are under investigation in nuclear industry for decontamination. (J.P.N.).

Surface processing by high power excimer laser

International Nuclear Information System (INIS)

Stehle, M.

1995-01-01

Surface processing with lasers is a promising field of research and applications because lasers bring substantial advantages : laser beams work at distance, laser treatments are clean in respect of environment consideration and they offer innovative capabilities for surface treatment which cannot be reached by other way. Excimer lasers are pulsed, gaseous lasers which emit in UV spectral range - the most common are XeCl (308 nm), KrF (248 nm), ArF (193 nm). From 1980 up to 1994, many of them have been used for research, medical and industrial applications such as spectroscopy, PRK (photo-refractive keratotomy) and micro-machining. In the last six years, from 1987 up to 1993, efforts have been done in order to jump from 100 W average power up to 1 kW for XeCl laser at λ = 308 nm. It was the aim of AMMTRA project in Japan as EU205 and EU213 Eureka projects in Europe. In this framework, SOPRA developed VEL (Very large Excimer Laser). In 1992, 1 kW (10 J x 100 Hz) millstone has been reached for the first time, this technology is based on X-Ray preionization and large laser medium (5 liters). Surface treatments based on this laser source are the main purpose of VEL Lasers. Some of them are given for instance : a) Turbine blades made with metallic substrate and ceramic coatings on the top, are glazed in order to increase corrosion resistance of ceramic and metal sandwich. b) Selective ablation of organic coatings deposited on fragile composite material is investigated in Aerospace industry. c) Chock hardening of bulk metallic materials or alloys are investigated for automotive industry in order to increase wear resistance. d) Ablation of thin surface oxides of polluted steels are under investigation in nuclear industry for decontamination. (J.P.N.)

Treatment of onychomycosis using radiation of excimer laser

Czech Academy of Sciences Publication Activity Database

Urzová, J.; Jelínek, Miroslav; Mikšovský, Jan; Kymplová, J.

2013-01-01

Roč. 647, JAN (2013), s. 636-641 ISSN 1022-6680 R&D Projects: GA MŠk LD12069 Institutional support: RVO:68378271 Keywords : excimer laser * UV-C radiation * nails * onychomycosis Subject RIV: BM - Solid Matter Physics ; Magnetism

XeCl Excimer Laser For Micro - Machining Of Materials: Preliminary Theoretical And Experimental Works.

Science.gov (United States)

Iwanejko, Leszek; Pokora, Ludwik; Stefanski, Miroslaw; Ujda, Zbigniew

1987-10-01

The paper presents the results of preliminary investigations, both theoretical and experimental, of XeC1 excimer laser pumped by transverse electric discharge with UU preionization. The medium was a mixture of gases He-Xe-HC1. A theoretical model of the XeC1 laser was worked out and a lot of laser parameters calculations were done. In the same time an excimer laser operating on the mixture He-Xe-HC1 was started, the generation of laser radiation was of energy about 20mJ.

Transparent Conducting Nb-Doped TiO2 Electrodes Activated by Laser Annealing for Inexpensive Flexible Organic Solar Cells

Science.gov (United States)

Lee, Jung-Hsiang; Lin, Chia-Chi; Lin, Yi-Chang

2012-01-01

A KrF excimer laser (λ= 248 nm) has been adopted for annealing cost-effective Nb-doped TiO2 (NTO) films. Sputtered NTO layers were annealed on SiO2-coated flexible poly(ethylene terephthalate) (PET) substrates. This local laser annealing technique is very useful for the formation of anatase NTO electrodes used in flexible organic solar cells (OSCs). An amorphous NTO film with a high resistivity and a low transparency was transformed significantly into a conductive and transparent anatase NTO electrode by laser irradiation. The 210 nm anatase NTO film shows a sheet resistance of 50 Ω and an average optical transmittance of 83.5% in the wavelength range from 450 to 600 nm after annealing at 0.25 J/cm2. The activation of Nb dopants and the formation of the anatase phase contribute to the high conductivity of the laser-annealed NTO electrode. Nb activation causes an increase in the optical band gap due to the Burstein-Moss effect. The electrical properties are in agreement with the material characteristics determined by X-ray diffraction (XRD) analysis and secondary ion mass spectrometry (SIMS). The irradiation energy for the NTO electrode also affects the performance of the organic solar cell. The laser annealing technique provides good properties of the anatase NTO film used as a transparent electrode for flexible organic solar cells (OSCs) without damage to the PET substrate or layer delamination from the substrate.

A comparison of the characteristics of excimer and femtosecond laser ablation of acrylonitrile butadiene styrene (ABS)

International Nuclear Information System (INIS)

See, Tian Long; Liu, Zhu; Li, Lin; Zhong, Xiang Li

2016-01-01

Highlights: • Ablation threshold for excimer laser is lower compared to femtosecond laser. • Effective optical penetration depth for excimer laser is lower compared to femtosecond laser. • Two ablation characteristic regimes are observed for femtosecond laser ablation. • Reduction of C=C bond following excimer or fs laser ablation is observed. • Addition of oxygen- and nitrogen-rich functional groups is observed. - Abstract: This paper presents an investigation on the ablation characteristics of excimer laser (λ = 248 nm, τ = 15 ns) and femtosecond laser (λ = 800 nm, τ = 100 fs) on ABS polymer sheets. The laser–material interaction parameters (ablation threshold, optical penetration depth and incubation factor) and the changes in material chemical properties were evaluated and compared between the two lasers. The work shows that the ablation threshold and effective optical penetration depth values are dependent on the wavelength of laser beam (photon energy) and the pulse width. The ablation threshold value is lower for the excimer laser ablation of ABS (F_t_h = 0.087 J/cm"2) than that for the femtosecond laser ablation of ABS (F_t_h = 1.576 J/cm"2), demonstrating a more dominating role of laser wavelength than the pulse width in influencing the ablation threshold. The ablation depth versus the logarithmic scale of laser fluence shows two linear regions for the fs laser ablation, not previously known for polymers. The effective optical penetration depth value is lower for excimer laser ablation (α"−"1 = 223 nm) than that for femtosecond laser ablation (α"−"1 = 2917 nm). The ablation threshold decreases with increasing number of pulses (NOP) due to the chain scission process that shortens the polymeric chains, resulting in a weaker polymeric configuration and the dependency is governed by the incubation factor. Excimer laser treatment of ABS eliminates the C=C bond completely through the chain scission process whereas C=C bond is partially

A comparison of the characteristics of excimer and femtosecond laser ablation of acrylonitrile butadiene styrene (ABS)

Energy Technology Data Exchange (ETDEWEB)

See, Tian Long, E-mail: tianlong.see@postgrad.manchester.ac.uk [Corrosion and Protection Centre, School of Materials, The Mill, The University of Manchester, M13 9PL Manchester (United Kingdom); Laser Processing Research Centre, School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, M13 9PL Manchester (United Kingdom); Liu, Zhu [Corrosion and Protection Centre, School of Materials, The Mill, The University of Manchester, M13 9PL Manchester (United Kingdom); Li, Lin [Laser Processing Research Centre, School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, M13 9PL Manchester (United Kingdom); Zhong, Xiang Li [Corrosion and Protection Centre, School of Materials, The Mill, The University of Manchester, M13 9PL Manchester (United Kingdom)

2016-02-28

Highlights: • Ablation threshold for excimer laser is lower compared to femtosecond laser. • Effective optical penetration depth for excimer laser is lower compared to femtosecond laser. • Two ablation characteristic regimes are observed for femtosecond laser ablation. • Reduction of C=C bond following excimer or fs laser ablation is observed. • Addition of oxygen- and nitrogen-rich functional groups is observed. - Abstract: This paper presents an investigation on the ablation characteristics of excimer laser (λ = 248 nm, τ = 15 ns) and femtosecond laser (λ = 800 nm, τ = 100 fs) on ABS polymer sheets. The laser–material interaction parameters (ablation threshold, optical penetration depth and incubation factor) and the changes in material chemical properties were evaluated and compared between the two lasers. The work shows that the ablation threshold and effective optical penetration depth values are dependent on the wavelength of laser beam (photon energy) and the pulse width. The ablation threshold value is lower for the excimer laser ablation of ABS (F{sub th} = 0.087 J/cm{sup 2}) than that for the femtosecond laser ablation of ABS (F{sub th} = 1.576 J/cm{sup 2}), demonstrating a more dominating role of laser wavelength than the pulse width in influencing the ablation threshold. The ablation depth versus the logarithmic scale of laser fluence shows two linear regions for the fs laser ablation, not previously known for polymers. The effective optical penetration depth value is lower for excimer laser ablation (α{sup −1} = 223 nm) than that for femtosecond laser ablation (α{sup −1} = 2917 nm). The ablation threshold decreases with increasing number of pulses (NOP) due to the chain scission process that shortens the polymeric chains, resulting in a weaker polymeric configuration and the dependency is governed by the incubation factor. Excimer laser treatment of ABS eliminates the C=C bond completely through the chain scission process whereas

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Krivyakin, G. K.; Volodin, V. A., E-mail: volodin@isp.nsc.ru; Kochubei, S. A.; Kamaev, G. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Purkrt, A.; Remes, Z. [Institute of Physics ASCR (Czech Republic); Fajgar, R. [Institute of Chemical Process Fundamentals of the ASCR (Czech Republic); Stuchliková, T. H.; Stuchlik, J. [Institute of Physics ASCR (Czech Republic)

2016-07-15

Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.

Collagen crosslinking for ectasia following PRK performed in excimer laser-assisted keratoplasty for keratoconus.

Science.gov (United States)

Spadea, Leopoldo

2012-01-01

To report the results of corneal collagen crosslinking (CXL) in a patient with corneal ectasia developed after excimer laser-assisted lamellar keratoplasty for keratoconus and a secondary photorefractive keratectomy (PRK) for residual refractive error. A 33-year-old woman, who had originally been treated for keratoconus in the right eye by excimer laser-assisted lamellar keratoplasty, subsequently had her residual ametropia treated by topographically guided, transepithelial excimer laser PRK. Five years after PRK, the patient developed corneal ectasia showing concomitant visual changes of best spectacle-corrected visual acuity (BSCVA) reduced to 20/33 with a refraction of -6.00 +6.00 × 30. The minimum corneal thickness at the ectasia apex was 406 µm. A treatment of riboflavin-UVA-induced corneal CXL was performed on the right eye. Two years after the CXL treatment, the right eye improved to 20/20 BSCVA with a refraction of plano +1.00 × 50 while exhibiting a clear lamellar graft. Corneal CXL provided safe and effective management of ectasia developed after excimer laser-assisted lamellar keratoplasty and PRK.

A design of energy detector for ArF excimer lasers

Science.gov (United States)

Feng, Zebin; Han, Xiaoquan; Zhou, Yi; Bai, Lujun

2017-08-01

ArF excimer lasers with short wavelength and high photon energy are widely applied in the field of integrated circuit lithography, material processing, laser medicine, and so on. Excimer laser single pulse energy is a very important parameter in the application. In order to detect the single pulse energy on-line, one energy detector based on photodiode was designed. The signal processing circuit connected to the photodiode was designed so that the signal obtained by the photodiode was amplified and the pulse width was broadened. The amplified signal was acquired by a data acquisition card and stored in the computer for subsequent data processing. The peak of the pulse signal is used to characterize the single pulse energy of ArF excimer laser. In every condition of deferent pulse energy value levels, a series of data about laser pulses energy were acquired synchronously using the Ophir energy meter and the energy detector. A data set about the relationship between laser pulse energy and the peak of the pulse signal was acquired. Then, by using the data acquired, a model characterizing the functional relationship between the energy value and the peak value of the pulse was trained based on an algorithm of machine learning, Support Vector Regression (SVR). By using the model, the energy value can be obtained directly from the energy detector designed in this project. The result shows that the relative error between the energy obtained by the energy detector and by the Ophir energy meter is less than 2%.

Change of wettability of PTFE surface by sputter etching and excimer laser. Sputter etching oyobi excimer laser ni yoru PTFE hyomen no shinsuika

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, S. (Nitto Denko Corp., Osaka (Japan)); Kubo, U. (Kinki University, Osaka (Japan))

1994-06-20

The wettability of PTFE (polytetrafluoroethylene) surfaces was improved by sputter etching and excimer laser irradiation. In sputter etching, the PTFE surface was treated by reactive sputter etching with H2O gas to give active groups on the surface. In laser irradiation, the surface was irradiated in pure water by high-energy KrF excimer laser. As the surface wettability was evaluated with a contact angle to water, the contact angle decreased remarkably in both treatments resulting in a good improvement effect. In sputter etching, various new chemical bonds such as F-C=O, F2C-FC-O, F2C-C-O and C-O were observed because of a decrease in F and incorporation of oxygen. Such chemical bonds could be eliminated by ultraviolet ray irradiation, and the treated surface condition approached the initial condition after irradiation of 200 hours. In laser irradiation, it was suggested that C-F bonds were broken, and OH groups were added to the surface by dissociation of H2O to H and OH. 7 refs., 8 figs., 1 tab.

Excimer laser recrystallization of nanocrystalline-Si films deposited by inductively coupled plasma chemical vapour deposition at 150 deg. C

International Nuclear Information System (INIS)

Park, Joong-Hyun; Han, Sang-Myeon; Park, Sang-Geun; Han, Min-Koo; Shin, Moon-Young

2006-01-01

Polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated at low temperature (under 200 deg. C) have been widely investigated for flexible substrate applications such as a transparent plastic substrate. Unlike the conventional TFT process using glass substrate, the maximum process temperature should be kept less than 200 deg. C in order to avoid thermal damage on flexible substrates. We report the characteristics of nanocrystalline silicon (nc-Si) irradiated by an excimer laser. Nc-Si precursors were deposited on various buffer layers by inductively coupled plasma chemical vapour deposition (ICP-CVD) at 150 deg. C. We employed various buffer layers, such as silicon nitride (SiN X ) and silicon dioxide (SiO 2 ), in order to report recrystallization characteristics in connection with a buffer layer of a different thermal conductivity. The dehydrogenation and recrystallization was performed by step-by-step excimer laser annealing (ELA) (XeCl,λ=308 nm) in order to prevent the explosive release of hydrogen atoms. The grain size of the poly-Si film, which was recrystallized on the various buffer layers, was measured by scanning electron microscopy (SEM) at each laser energy density. The process margin of step-by-step ELA employing the SiN X buffer layer is wider than SiO 2 and the maximum grain size slightly increased

Investigation of excimer laser ablation threshold of polymers using a microphone

Energy Technology Data Exchange (ETDEWEB)

Krueger, Joerg; Niino, Hiroyuki; Yabe, Akira

2002-09-30

KrF excimer laser ablation of polyethylene terephthalate (PET), polyimide (PI) and polycarbonate (PC) in air was studied by an in situ monitoring technique using a microphone. The microphone signal generated by a short acoustic pulse represented the etch rate of laser ablation depending on the laser fluence, i.e., the ablation 'strength'. From a linear relationship between the microphone output voltage and the laser fluence, the single-pulse ablation thresholds were found to be 30 mJ cm{sup -2} for PET, 37 mJ cm{sup -2} for PI and 51 mJ cm{sup -2} for PC (20-pulses threshold). The ablation thresholds of PET and PI were not influenced by the number of pulses per spot, while PC showed an incubation phenomenon. A microphone technique provides a simple method to determine the excimer laser ablation threshold of polymer films.

Triggering Excimer Lasers by Photoionization from Corona Discharges

Science.gov (United States)

Xiong, Zhongmin; Duffey, Thomas; Brown, Daniel; Kushner, Mark

2009-10-01

High repetition rate ArF (192 nm) excimer lasers are used for photolithography sources in microelectronics fabrication. In highly attaching gas mixtures, preionization is critical to obtaining stable, reproducible glow discharges. Photoionization from a separate corona discharge is one technique for preionization which triggers the subsequent electron avalanche between the main electrodes. Photoionization triggering of an ArF excimer laser sustained in multi-atmosphere Ne/Ar/F2/Xe gas mixtures has been investigated using a 2-dimensional plasma hydrodynamics model including radiation transport. Continuity equations for charged and neutral species, and Poisson's equation are solved coincident with the electron temperature with transport coefficients obtained from solutions of Boltzmann's equation. Photoionizing radiation is produced by a surface discharge which propagates along a corona-bar located adjacent to the discharge electrodes. The consequences of pulse power waveform, corona bar location, capacitance and gas mixture on uniformity, symmetry and gain of the avalanche discharge will be discussed.

Prototype of an excimer laser for microprocessing

Science.gov (United States)

Iwanejko, Leszek; Pokora, Ludwik J.; Wolinski, Wieslaw L.

1991-08-01

The paper presents a brief description of a prototype of a XeC1 excimer laser for micraprocessing of materials. The planned main parameters of the laserare as follows: wavelength . . . . . . . . . . . . . . . . . . . . . . . . . 308 nm -''energyofapulse. . . . . . . . . . . . . lOOmJ -pulseduration (FWHM) . . . . . . . . . . . . . . . 2Ons repetition frequency . . . . . . . . . . . . . . 1O Hz peak power of a pulse . . . . . . . . . . . . . . . 5 MW With respect to currently carrried works with the prototype we show only preliminary results of testing of a laser head. The obtained maximum laser pulse energy exceeded 90 ml. However it should be pointed out that this value was obtained without any opt i mi z at i on of the 1 aser.

High Efficiency Mask Based Laser Materials Processing with TEA-CO2 - and Excimer Laser

DEFF Research Database (Denmark)

Bastue, Jens; Olsen, Flemmming Ove

1997-01-01

In general, mask based laser materials processing techniques suffer from a very low energy efficiency. We have developed a simple device called an energy enhancer, which is capable of increasing the energy efficiency of typical mask based laser materials processing systems. A short review of the ...... line marking with TEA-CO2 laser of high speed canning lines. The second one is manufactured for marking or microdrilling with excimer laser....

308-nm excimer laser for the treatment of alopecia areata in children.

Science.gov (United States)

Al-Mutairi, Nawaf

2009-01-01

Alopecia areata (AA) is a common skin disease which is characterized by nonscarring localized or diffused hair loss. In this study we assessed the efficacy of 308-nm Excimer laser in the treatment of alopecia areata in children. A total of 9 children with 30 recalcitrant patches alopecia areata and two children with alopecia areata totalis were enrolled in this study which included seven male and four female patients, aged between 4 and 14 years and the durations of their disease were between 7 and 25 months. All of these patients had more than one lesion of alopecia areata and at least one of them was left as a control for comparison. The lesions were treated with the 308-nm Excimer laser twice a week for a period of 12 weeks. Regrowth of hair was observed in 18 (60%) alopecia patches in the scalp, while there was no response in the control patches and over the extremities. Only four patients with scalp lesions showed a recurrence of alopecia after 6 months post laser therapy. So, 308-nm Excimer laser is considered an effective safe therapeutic option for patchy alopecia areata in children.

XeCl Excimer Laser with Three- and Four-Component Mixture of Active Gases

International Nuclear Information System (INIS)

Iwanejko, L.; Pokora, L.

1998-01-01

Selected results of investigations of a XeCl excimer laser employing a new type (four-component)of mixture of gases, He-Kr:Xe-HCl, are presented. The mixture includes, instead of Xe, a mixture of not-separated Kr and Xe gases, much less expensive than pure xenon. A comparison of durations and energies of pulses generated in the XeCl excimer laser using three- or four-component gaseous active medium (He-Xe-HCl or He-Kr:Xe-HCl) is made. The investigations have been carried out with the use of a laser system with UV preionization and self sustained pumping discharge. (author)

FEM for modelling 193 nm excimer laser treatment of SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub x} heterostructures on SOI substrates

Energy Technology Data Exchange (ETDEWEB)

Conde, J.C.; Chiussi, S.; Gontad, F.; Gonzalez, P. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas, Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain)

2011-03-15

Research on epitaxial crystalline silicon (c-Si) and silicon-germanium (Si{sub 1-x}Ge{sub x}) alloys growth and annealing for microelectronic purposes, such as Micro- or Nano-Electro-Mechanical Systems (MEMS or NEMS) and Silicon-On-Nothing (SON) devices is continuously in progress. Laser assisted annealing techniques using commercial ArF Excimer Laser sources are based on ultra-rapid heating and cooling cycles induced by the 193 nm pulses of 20 ns, which are absorbed in the near surface region of the heterostructures. During and after the absorption of these laser pulses, complex physical processes appear that strongly depend on sample structure and applied laser pulse energy densities. The control of the experimental parameters is therefore a key task for obtaining high quality alloys. The Finite ElementsMethod (FEM) is a powerful tool for the optimization of such treatments, because it provides the spatial and temporal temperature fields that are produced by the laser pulses. In this work, we have used a FEM commercial software, to predict the temperatures gradients induced by ArF excimer laser over a wide energy densities range, 0.1<{phi}<0.4 J/cm{sup 2}, on different SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub (x)} thin films deposited on SOI substrate. These numerical results allow us to predict the threshold energies needed to reach the melting point (MP) of the Si and SiGe alloy without oxidation of the thin films system. Therefore, it is possible to optimize the conditions to achieve high quality epitaxy films. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Pattern Laser Annealing by a Pulsed Laser

Science.gov (United States)

Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

1981-10-01

Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

Application of optical tweezers and excimer laser to study protoplast fusion

Science.gov (United States)

Kantawang, Titirat; Samipak, Sompid; Limtrakul, Jumras; Chattham, Nattaporn

2015-07-01

Protoplast fusion is a physical phenomenon that two protoplasts come in contact and fuse together. Doing so, it is possible to combine specific genes from one protoplast to another during fusion such as drought resistance and disease resistance. There are a few possible methods to induce protoplast fusion, for example, electrofusion and chemical fusion. In this study, chemical fusion was performed with laser applied as an external force to enhance rate of fusion and observed under a microscope. Optical tweezers (1064 nm with 100X objective N.A. 1.3) and excimer laser (308 nm LMU-40X-UVB objective) were set with a Nikon Ti-U inverted microscope. Samples were prepared by soaking in hypertonic solution in order to induce cell plasmolysis. Elodea Canadensis and Allium cepa plasmolysed leaves were cut and observed under microscope. Concentration of solution was varied to induce difference turgor pressures on protoplasts pushing at cell wall. Free protoplasts in solution were trapped by optical tweezers to study the effect of Polyethylene glycol (PEG) solution. PEG was diluted by Ca+ solution during the process to induced protoplast cell contact and fusion. Possibility of protoplast fusion by excimer laser was investigated and found possible. Here we report a novel tool for plant cell fusion using excimer laser. Plant growth after cell fusion is currently conducted.

Excimer laser beam profile recording based on electrochemical etched polycarbonate

International Nuclear Information System (INIS)

Parvin, P.; Jaleh, B.; Zangeneh, H.R.; Zamanipour, Z.; Davoud-Abadi, Gh.R.

2008-01-01

There is no polymeric detector used to register the beam profile of UV lasers. Here, a method is proposed for the measurement of intensive UV beam pattern of the excimer lasers based on the photoablated polycarbonate detector after coherent UV exposure and the subsequent electrochemical etching. UV laser induced defects in the form of self-microstructuring on polycarbonate are developed to replicate the spatial intensity distribution as a beam profiler

Excimer laser beam profile recording based on electrochemical etched polycarbonate

Energy Technology Data Exchange (ETDEWEB)

Parvin, P. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of); Laser Research Center, AEOI, P.O. Box 1165-8486, Tehran (Iran, Islamic Republic of)], E-mail: parvin@aut.ac.ir; Jaleh, B. [Physics Department, Bu-Ali Sina University, Postal Code 65174, Hamedan (Iran, Islamic Republic of); Zangeneh, H.R. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of); Zamanipour, Z. [Laser Research Center, AEOI, P.O. Box 1165-8486, Tehran (Iran, Islamic Republic of); Davoud-Abadi, Gh.R. [Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Hafez Ave, Tehran (Iran, Islamic Republic of)

2008-08-15

There is no polymeric detector used to register the beam profile of UV lasers. Here, a method is proposed for the measurement of intensive UV beam pattern of the excimer lasers based on the photoablated polycarbonate detector after coherent UV exposure and the subsequent electrochemical etching. UV laser induced defects in the form of self-microstructuring on polycarbonate are developed to replicate the spatial intensity distribution as a beam profiler.

Automatic alignment of double optical paths in excimer laser amplifier

Science.gov (United States)

Wang, Dahui; Zhao, Xueqing; Hua, Hengqi; Zhang, Yongsheng; Hu, Yun; Yi, Aiping; Zhao, Jun

2013-05-01

A kind of beam automatic alignment method used for double paths amplification in the electron pumped excimer laser system is demonstrated. In this way, the beams from the amplifiers can be transferred along the designated direction and accordingly irradiate on the target with high stabilization and accuracy. However, owing to nonexistence of natural alignment references in excimer laser amplifiers, two cross-hairs structure is used to align the beams. Here, one crosshair put into the input beam is regarded as the near-field reference while the other put into output beam is regarded as the far-field reference. The two cross-hairs are transmitted onto Charge Coupled Devices (CCD) by image-relaying structures separately. The errors between intersection points of two cross-talk images and centroid coordinates of actual beam are recorded automatically and sent to closed loop feedback control mechanism. Negative feedback keeps running until preset accuracy is reached. On the basis of above-mentioned design, the alignment optical path is built and the software is compiled, whereafter the experiment of double paths automatic alignment in electron pumped excimer laser amplifier is carried through. Meanwhile, the related influencing factors and the alignment precision are analyzed. Experimental results indicate that the alignment system can achieve the aiming direction of automatic aligning beams in short time. The analysis shows that the accuracy of alignment system is 0.63μrad and the beam maximum restoration error is 13.75μm. Furthermore, the bigger distance between the two cross-hairs, the higher precision of the system is. Therefore, the automatic alignment system has been used in angular multiplexing excimer Main Oscillation Power Amplification (MOPA) system and can satisfy the requirement of beam alignment precision on the whole.

Comparing laser induced plasmas formed in diode and excimer pumped alkali lasers.

Science.gov (United States)

Markosyan, Aram H

2018-01-08

Lasing on the D 1 transition (6 2 P 1/2 → 6 2 S 1/2 ) of cesium can be reached in both diode and excimer pumped alkali lasers. The first uses D 2 transition (6 2 S 1/2 → 6 2 P 3/2 ) for pumping, whereas the second is pumped by photoexcitation of ground state Cs-Ar collisional pairs and subsequent dissociation of diatomic, electronically-excited CsAr molecules (excimers). Despite lasing on the same D 1 transition, differences in pumping schemes enables chemical pathways and characteristic timescales unique for each system. We investigate unavoidable plasma formation during operation of both systems side by side in Ar/C 2 H 6 /Cs.

Performance characteristics of an excimer laser (XeCl) with single ...

Indian Academy of Sciences (India)

2017-01-10

Jan 10, 2017 ... Performance characteristics of an excimer laser (XeCl) with single-stage magnetic ... the stress can increase the lifetime of the switches and ..... work. References. [1] Ying-Tung Chen, Kris Naessens, Roel Bates, Yunn-Shiuan.

Composition of the excimer laser-induced plume produced during LASIK refractive surgery

Science.gov (United States)

Glickman, Randolph D.; Liu, Yun; Mayo, George L.; Baribeau, Alan D.; Starck, Tomy; Bankhead, Tom

2003-07-01

Because of concerns about potential hazards to surgical personnel of the plume associated with laser refractive surgery, this study was performed to characterize the composition of such plumes. Filter elements were removed from the smoke evacuator of a VISX S3 excimer laser (filter pore size ~0.3 microns) and from a Mastel Clean Room ( filter pore size ~0.2 microns) used with a LADARVISION excimer laser. The filters from both laser systems captured the laser-induced plumes from multiple, routine, LASIK patient procedures. Some filters were processed for scanning electron microscopy, while others were extracted with methanol and chloroform for biochemical analysis. Both the VISX "Final Air" filter and the Mastel "Clean Room" filter captured material that was not observed in filters that had clean operating room air only passed through them. In the VISX system, air flows through the filter unit parallel to the filter matrix. SEM analysis showed these filters captured discrete particles of 0.3 to 3.0 microns in size. In the Mastel Clean Room unit, air flows orthogonally through the filter, and the filter matrix was heavily layered with captured debris so that individual particles were not readily distinguished. Amino acid analysis and gel electrophoresis of extracted material revealed proteinaceous molecules as large as 5000 molecular weight. Such large molecules in the laser plume are not predicted by the existing theory of photochemical ablation. The presence of relatively large biomolecules may constitute a risk of allergenic reactions in personnel exposed to the plume, and also calls into question the precise mechanism of excimer laser photochemical ablation. Supported by the RMG Research Endowment, and Research to Prevent Blindness

Effectiveness of 308-nm Excimer Laser Therapy in Treating Alopecia Areata, Determined by Examining the Treated Sides of Selected Alopecic Patches.

Science.gov (United States)

Byun, Ji Won; Moon, Jong Hyuk; Bang, Chan Yl; Shin, Jeonghyun; Choi, Gwang Seong

2015-01-01

Some studies have reported the use of 308-nm excimer laser therapy for treating alopecia areata (AA); however, the effectiveness of this therapy on a theoretical basis has not yet been comparatively analyzed. To determine the therapeutic effect of excimer laser therapy on AA. One alopecic patch was divided into control and treated sides in 10 patients with AA. Then, 308-nm excimer laser therapy was administered twice a week for 12 weeks. Photograph and phototrichogram analyses were performed. Photographic assessments by both dermatologists and individuals of the general population showed objective improvements after excimer laser therapy. On the treated side, the hair count and hair diameter had statistically increased after treatment. However, only the hair diameter was found to be significantly high in the treated half when it was compared with the control side. The 308-nm excimer laser has a therapeutic effect on AA, which is proven by photograph and phototrichogram analysis by a side-by-side comparison. © 2015 S. Karger AG, Basel.

Stability of a 1-kW excimer laser with long optical pulses

NARCIS (Netherlands)

Timmermans, J.C.M.; Hofmann, T.; Hofmann, Th.; van Goor, F.A.; Witteman, W.J.

1996-01-01

For high repetition operation of excimer-lasers care has to be taken of the changing performance of the electrical circuit, gas dynamic effects and contamination of the gas mixture to avoid deterioration of the laser performance. The parameters that influence the stability of the discharge are

Measurement of radiation and temperature of cathod spots in excimer laser discharge; Ekishima reza reiki hodennai ni fukumareru inkyoku kiten no kogakuteki kansoku to ondo no sokutei

Energy Technology Data Exchange (ETDEWEB)

Minamitani, Y.; Nakatani, H. [Mitsubishi Electric Corp., Tokyo (Japan)

1996-08-20

Excimer laser is used in various fields such as luminous source for steppers, annealing treatment, ablation process, nuclear fusion and so on. In this paper, the radiation timing and gas temperature of cathode spots, streamer discharges and glow discharges in KrF excimer are measured by observing the radiating spectra thereof. The following conclusions are obtained from the results of the present study. Cathode spots begin to radiate at about 20ns after the discharge initiation, then the first and second radiation peaks are observed respectively when the discharge current reversing after passing zero point and the reserved discharged current approaching zero point. Streamer discharge makes flashover between electrodes at the second radiation peak of cathode spots, while the glow discharges almost disappear when streamer discharges occurring. The temperatures of cathode spots and glow discharge as 5500K and 2600K respectively are almost constant and independent upon the discharging voltage of laser. 14 refs., 12 figs.

Excimer laser decomposition of silicone

International Nuclear Information System (INIS)

Laude, L.D.; Cochrane, C.; Dicara, Cl.; Dupas-Bruzek, C.; Kolev, K.

2003-01-01

Excimer laser irradiation of silicone foils is shown in this work to induce decomposition, ablation and activation of such materials. Thin (100 μm) laminated silicone foils are irradiated at 248 nm as a function of impacting laser fluence and number of pulsed irradiations at 1 s intervals. Above a threshold fluence of 0.7 J/cm 2 , material starts decomposing. At higher fluences, this decomposition develops and gives rise to (i) swelling of the irradiated surface and then (ii) emission of matter (ablation) at a rate that is not proportioned to the number of pulses. Taking into consideration the polymer structure and the foil lamination process, these results help defining the phenomenology of silicone ablation. The polymer decomposition results in two parts: one which is organic and volatile, and another part which is inorganic and remains, forming an ever thickening screen to light penetration as the number of light pulses increases. A mathematical model is developed that accounts successfully for this physical screening effect

Excimer laser superficial keratectomy for proud nebulae in keratoconus.

Science.gov (United States)

Moodaley, L; Liu, C; Woodward, E G; O'Brart, D; Muir, M K; Buckley, R

1994-06-01

Contact lens intolerance in keratoconus may be due to the formation of a proud nebula at or near the apex of the cone. Excimer laser superficial keratectomy was performed as an outpatients with proud nebulae as treatment patients with proud nebulae as treatment for their contact lens intolerance. The mean period of contact lens wear before the development of intolerance was 13.4 years (range 2 to 27 years). Following the development of intolerance, three patients abandoned contact lens wear in the affected eye while the remainder experienced a reduction in comfortable wearing time (mean = 3.75 hours; range: 0-14 hours). All patients had good potential Snellen visual acuity with a contact lens of 6/9 (nine eyes) and 6/12 (one eye). The proud nebulae were directly ablated with a 193 nm ArF excimer laser using a 1 mm diameter beam. Between 100-150 pulses were sufficient to ablate the raised area. Patients experienced no pain during the procedure and reported minimal discomfort postoperatively. In all cases flattening of the proud nebulae was achieved. Seven patients were able to resume regular contact lens wear (mean wearing time = 10.17 hours; range 8 to 16 hours). In three patients, resumption of contact lens wear was unsuccessful because of cone steepness. All patients achieved postoperative Snellen visual acuity of 6/12 or better with a contact lens. Four patients experienced a loss of one line in Snellen acuity. The mean follow up period was 8.3 months (range 2 to 17 months). Excimer laser superficial keratectomy is a useful technique for the treatment of contact lens intolerance caused by proud nebulae in patients with keratoconus. Penetrating keratoplasty is thus avoided.

Effect of excimer laser (Arf, 193 nm) on aqueous humor during photorefractive keratectomy biophysical and biochemical study

International Nuclear Information System (INIS)

Mahmoud, S.S.; Mahmoud, A.A.

2004-01-01

Ultraviolet light (193 nm) produced by an excimer laser has been used to produce precise tissue ablation with minimal thermal damage to adjacent tissue. The present study was designed to investigate the effect of excimer laser during photo refractive keratectomy (PRK) on aqueous humor constituents and also the effect of antioxidant enzyme superoxide dismutase (SOD)- applied topically- on these changes if exist. Five groups of schenchilla rabbits were involved in this study, where four groups underwent corneal stromal ablation using argon fluoride excimer laser (Ar F, 193 nm). Two of these four groups were treated with superoxide dismutase intra operatively. The fifth group was used as control one. The obtained results revealed depletion of aqueous humor ascorbate and glutathione contents. Aqueous humor refractive index, cholesterol, phospholipids, malondialdehyde (MDA) and total protein were measured. In conclusion, the excimer laser can induce changes in aqueous humor constituents during PRK. These changes lasted at least for 24 hours and as the time increased to 4 weeks, these changes became limited. The use of exogenous SOD seems to exert beneficial effect on aqueous humor refractive index and total protein

The development and progress of XeCl Excimer laser system

Science.gov (United States)

Zhang, Yongsheng; Ma, Lianying; Wang, Dahui; Zhao, Xueqing; Zhu, Yongxiang; Hu, Yun; Qian, Hang; Shao, Bibo; Yi, Aiping; Liu, Jingru

2015-05-01

A large angularly multiplexed XeCl Excimer laser system is under development at the Northwest Institute of Nuclear Technology (NINT). It is designed to explore the technical issues of uniform and controllable target illumination. Short wavelength, uniform and controllable target illumination is the fundamental requirement of high energy density physics research using large laser facility. With broadband, extended light source and multi-beam overlapping techniques, rare gas halide Excimer laser facility will provide uniform target illumination theoretically. Angular multiplexing and image relay techniques are briefly reviewed and some of the limitations are examined to put it more practical. The system consists of a commercial oscillator front end, three gas discharge amplifiers, two electron beam pumped amplifiers and the optics required to relay, encode and decode the laser beam. An 18 lens array targeting optics direct and focus the laser in the vacuum target chamber. The system is operational and currently undergoing tests. The total 18 beams output energy is more than 100J and the pulse width is 7ns (FWHM), the intensities on the target will exceed 1013W/cm2. The aberration of off-axis imaging optics at main amplifier should be minimized to improve the final image quality at the target. Automatic computer controlled alignment of the whole system is vital to efficiency and stability of the laser system, an array of automatic alignment model is under test and will be incorporated in the system soon.

Random noise can help to improve synchronization of excimer laser pulses.

Science.gov (United States)

Mingesz, Róbert; Barna, Angéla; Gingl, Zoltán; Mellár, János

2016-02-01

Recently, we have reported on a compact microcontroller-based unit developed to accurately synchronize excimer laser pulses (Mingesz et al. 2012 Fluct. Noise Lett. 11, 1240007 (doi:10.1142/S021947751240007X)). We have shown that dithering based on random jitter noise plus pseudorandom numbers can be used in the digital control system to radically reduce the long-term drift of the laser pulse from the trigger and to improve the accuracy of the synchronization. In this update paper, we present our new experimental results obtained by the use of the delay-controller unit to tune the timing of a KrF excimer laser as an addition to our previous numerical simulation results. The hardware was interfaced to the laser using optical signal paths in order to reduce sensitivity to electromagnetic interference and the control algorithm tested by simulations was applied in the experiments. We have found that the system is able to reduce the delay uncertainty very close to the theoretical limit and performs well in real applications. The simple, compact and flexible system is universal enough to also be used in various multidisciplinary applications.

High efficiency metal marking with CO2 laser and glass marking with excimer laser

DEFF Research Database (Denmark)

Bastue, Jens; Olsen, Flemmming Ove

1997-01-01

with a thoroughly tested ray-tracing model is presented and compared with experimental results. Special emphasis is put on two different applications namely marking in metal with TEA-CO2 laser and marking in glass with excimer laser. The results are evaluated on the basis of the achievable energy enhancement......Today, mask based laser materials processing and especially marking is widely used. However, the energy efficiency in such processes is very low [1].This paper gives a review of the results, that may be obtained using the energy enhancing technique [1]. Results of simulations performed...

Scattered UV irradiation during VISX excimer laser keratorefractive surgery.

Science.gov (United States)

Hope, R J; Weber, E D; Bower, K S; Pasternak, J P; Sliney, D H

2008-04-01

To evaluate the potential occupational health hazards associated with scattered ultraviolet (UV) radiation during photorefractive keratectomy (PRK) using the VISX Star S3 excimer laser. The Laser Vision Center, National Naval Medical Center, Bethesda, Maryland, USA. Intraoperative radiometric measurements were made with the Ophir Power/Energy Meter (LaserStar Model PD-10 with silicon detector) during PRK treatments as well as during required calibration procedures at a distance of 20.3 cm from the left cornea. These measurements were evaluated using a worst-case scenario for exposure, and then compared with the American Conference of Governmental Industrial Hygeinists (ACGIH) Threshold Value Limits (TVL) to perform a risk/hazard analysis. During the PRK procedures, the highest measured value was 248.4 nJ/pulse. During the calibration procedures, the highest measured UV scattered radiation level was 149.6 nJ/pulse. The maximum treatment time was 52 seconds. Using a worst-case scenario in which all treatments used the maximum power and time, the total energy per eye treated was 0.132 mJ/cm2 and the total UV radiation at close range (80 cm from the treated eye) was 0.0085 mJ/cm2. With a workload of 20 patients, the total occupational exposure at 80 cm to actinic UV radiation in an 8-hour period would be 0.425 mJ/cm2. The scattered actinic UV laser radiation from the VISX Star S3 excimer laser did not exceed occupational exposure limits during a busy 8-hour workday, provided that operating room personnel were at least 80 cm from the treated eye. While the use of protective eyewear is always prudent, this study demonstrates that the trace amounts of scattered laser emissions produced by this laser do not pose a serious health risk even without the use of protective eyewear.

Electrical properties and annealing kinetics study of laser-annealed ion-implanted silicon

International Nuclear Information System (INIS)

Wang, K.L.; Liu, Y.S.; Kirkpatrick, C.G.; Possin, G.E.

1979-01-01

This paper describes measurements of electrical properties and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. The experimental results include: (1) a determination of threshold energy density required for melting using a transient optical reflectivity technique, (2) measurements of dopant distribution using Rutherford backscattering spectroscopy, (3) characterization of electrical properties by measuring reverse leakage current densities of laser-annealed and thermal-annealed mesa diodes, (4) determination of annealed junction depth using an electron-beam-induced-current technique, and (5) a deep-level-transient spectroscopic study of residual defects. In particular, by measuring these properties of a diode annealed at a condition near the threshold energy density for liquid phase epitaxial regrowth, we have found certain correlations among these various annealing behaviors and electrical properties of laser-annealed ion-implanted silicon diodes

Excimer laser beam delivery systems for medical applications

Science.gov (United States)

Kubo, Uichi; Hashishin, Yuichi; Okada, Kazuyuki; Tanaka, Hiroyuki

1993-05-01

We have been doing the basic experiments of UV laser beams and biotissue interaction with both KrF and XeCl lasers. However, the conventional optical fiber can not be available for power UV beams. So we have been investigating about UV power beam delivery systems. These experiments carry on with the same elements doped quartz fibers and the hollow tube. The doped elements are OH ion, chlorine and fluorine. In our latest work, we have tried ArF excimer laser and biotissue interactions, and the beam delivery experiments. From our experimental results, we found that the ArF laser beam has high incision ability for hard biotissue. For example, in the case of the cow's bone incision, the incision depth by ArF laser was ca.15 times of KrF laser. Therefore, ArF laser would be expected to harden biotissue therapy as non-thermal method. However, its beam delivery is difficult to work in this time. We will develop ArF laser beam delivery systems.

Excimer-laser-induced activation of Mg-doped GaN layers

International Nuclear Information System (INIS)

Lin, Y.-J.; Liu, W.-F.; Lee, C.-T.

2004-01-01

In this study, we investigated the 248 nm excimer-laser-induced activation of the Mg-doped GaN layers. According to the observed photoluminescence results and the x-ray photoelectron spectroscopy measurements, we found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies (i.e., V Ga H 2 ) and/or the Ga vacancies occupied by interstitial Mg during the laser irradiation process, led to an increase in the hole concentration

Comparison of KrF and ArF excimer laser treatment of biopolymer surface

Energy Technology Data Exchange (ETDEWEB)

Michaljaničová, I. [Department of Solid State Engineering, University of Chemistry and Technology, 166 28 Prague (Czech Republic); Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, University of Chemistry and Technology, 166 28 Prague (Czech Republic); Heitz, J.; Barb, R.A. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Sajdl, P. [Department of Power Engineering, University of Chemistry and Technology, 166 28 Prague (Czech Republic); Švorčík, V. [Department of Solid State Engineering, University of Chemistry and Technology, 166 28 Prague (Czech Republic)

2015-06-01

Highlights: • The influence of ArF and KrF laser on biopolymer surface was determined. • ArF laser acts predominantly on biopolymer surface. • PHB roughness is increased similarly for both applied wavelengths. • Roughness of nanostructures can be precisely controlled. • ArF laser introduces nitrogen on PHB surface. - Abstract: The goal of this work was the investigation of the impact of two different excimer lasers on two biocompatible and biodegradable polymers (poly-L-lactide and poly hydroxybutyrate). Both polymers find usage in medical and pharmaceutical fields. The polymers were modified by KrF and ArF excimer lasers. Subsequently the impact on surface morphology, surface chemistry changes, and thermal properties was studied by means of confocal and AFM microscopy, FTIR and XPS spectroscopy and DSC calorimetry. Under the same conditions of laser treatment it was observed that ArF laser causes more significant changes on surface chemistry, surface morphology and pattern formation on the polymers under investigation. The data obtained in this work can be used for a wide range of possible applications, in tissue engineering or in combination with metallization in electronics, e.g. for biosensors.

Excimer Pumped Pulsed Tunable Dye Laser

Science.gov (United States)

Littman, Michael G.

1988-06-01

It has been recently shown and reported for the first time at this meeting, that Excimer pumping of a single-mode, short-cavity, grazing-incidence, longitudinally-pumped pulsed dye laser is feasible. In this paper the key concepts upon which this latest development is based are presented and are in a somewhat unusual form. This manuscript describes five specific dye laser examples. The five examples represent a progression from the simplest type of dye laser to the single-mode version mentioned above. The examples thus serve as a tutorial introduction to potential users of dye lasers. The article is organized into five sections or STEPS, each of which describes a different pulsed dye laser. Since the subtle points about dye lasers are best appreciated only after one actually attempts to build a working model, a PROCEDURES category is included in which details about the construction of the particular form of laser are given. As one reads through this category, think of it as looking over the shoulder of the laser builder. The NOTES category which follows is a brief but essential discussion explaining why various components and procedures are used, as well as how laser performance specifications are obtained. This subsection can he viewed as a discussion with the laser builder concerning the reasons for specific actions and choices made in the assembly of the example laser. The last category contains COMMENTS which provide additional related information pertaining to the example laser that goes beyond the earlier annotated discussion. If you like, these are the narrator's comments. At the end of the article, after the five sequential forms of the laser have been presented, there is a brief summation.

Corneal aldehyde dehydrogenase and glutathione S-transferase activity after excimer laser keratectomy in guinea pigs.

Science.gov (United States)

Bilgihan, K; Bilgihan, A; Hasanreisoğlu, B; Turkozkan, N

1998-03-01

The free radical balance of the eye may be changed by excimer laser keratectomy. Previous studies have demonstrated that excimer laser keratectomy increases the corneal temperature, decreases the superoxide dismutase activity of the aqueous, and induces lipid peroxidation in the superficial corneal stroma. Aldehyde dehydrogenase (ALDH) and glutathione S-transferase (GST) are known to play an important role in corneal metabolism, particularly in detoxification of aldehydes, which are generated from free radical reactions. In three groups of guinea pigs mechanical corneal de-epithelialisation was performed in group I, superficial corneal photoablation in group II, and deep corneal photoablation in group III, and the corneal ALDH and GST activities measured after 48 hours. The mean ALDH and GST activities of group I and II showed no differences compared with the controls (p > 0.05). The corneal ALDH activities were found to be significantly decreased (p < 0.05) and GST activities increased (p < 0.05) in group III. These results suggest that excimer laser treatment of high myopia may change the ALDH and GST activities, metabolism, and free radical balance of the cornea.

Subjective results of excimer laser correction of myopia. Review

Directory of Open Access Journals (Sweden)

V. N. Trubilin

2012-01-01

Full Text Available In review presents data of various authors regarding the subjective results excimer laser correction of myopia by LASIK. It was revealed that a group of patients with a high degree of dissatisfaction amounts to 4.6% of the total in all studies. High subjective results are confirmed by the positive dynamics of the «quality of life» of the patient.

Ultraviolet excimer laser ablation: the effect of wavelength and repetition rate on in vivo guinea pig skin

Energy Technology Data Exchange (ETDEWEB)

Morelli, J.; Kibbi, A.G.; Farinelli, W.; Boll, J.; Tan, O.T.

1987-06-01

Multiple dermatologic conditions that are currently treated with traditional cold-knife surgery are amenable to laser therapy. The ideal surgical treatment would be precise and total removal of abnormal tissue with maximal sparing of remaining structures. The ultraviolet (UV) excimer laser is capable of such precise tissue removal due to the penetration depth of 193 nm and 248 nm irradiation of 1 micron per pulse. This type of ablative tissue removal requires a high repetition rate for efficient lesional destruction. Excimer laser radiation at 193 nm is capable of high repetition rates, which are necessary while 248 nm radiation causes increasing nonspecific thermal injury as the laser repetition rate is increased.

The application of excimer lasers for corneal sculpturing

International Nuclear Information System (INIS)

King, M.C.

1990-01-01

Of the broad selection of lasers available for surgery, the argon fluoride excimer laser offers a set of attributes that make it uniquely suited for the removal of corneal tissue. With ultraviolet radiation at 193mm, the energy of an individual photon (6.3 electron volts) is sufficient to break bonds in protein molecules without generating molecular vibration (heat). A single laser pulse is capable of removing 0.25 microns of corneal tissue over a well defined area 80 mm 2 in extent. This excision with a lateral precision to a fraction of a micron causes no discernible damage to neighboring cells. The smooth surface left after the tissue is removed promotes a quick and predictable regrowth of the epithelium. The penetration of radiation into the underlying tissue is the order of a micron so there is no potential harm to the lens or retinal tissue. Insignificant mutagenesis or unscheduled DNA synthesis has been detected as a result of tissue irradiation at this wavelength. In the past few years major progress has been made towards developing ophthalmic procedures which utilize the unique properties of this laser. To date there are FDA IDE's (Investigational Device Exemptions) for the following procedures: Photorefractive Keratectomy (PRK) or corneal reshaping for correcting near-sightedness, far-sightedness and astigmatism without the need for eye glasses, contact lenses or conventional refractive surgery (Radial Keratotomy); Partial Excimer Trabeculectomy for relieving the pressure build-up caused by glaucoma; T-Excisons for reducing astigmatism; Myopic Keratomileusis (MKM) for the refractive correction of severe myopia; superficial Keratectomy (corneal smoothing) for treating various corneal scars, dystrophies, recurrent corneal erosion etc. In this paper the fundamentals of beam tissue interaction at 193nm will be discussed

Krypton excimer laser oscillation by discharge pumping

International Nuclear Information System (INIS)

Shirai, Takahiro; Tabe, Yoshitaka; Kubodera, Shoichi; Sasaki, Wataru; Kawanaka, Junji

2001-01-01

We have demonstrated vacuum ultraviolet (VUV) laser oscillation of the krypton excimer (Kr 2 *) excited by a compact self-sustained discharge device. We have observed a spectral narrowing of the Kr 2 * emission centered at 147.8 nm. A deconvoluted spectral width is 0.5 nm (FWHM), which reveals a contrast to a 13 nm spectral width of the spontaneous emission. The Kr 2 * intensity has increased one order of magnitude when a charging voltage was increased larger than 29 kV. The success of the lasing in the VUV spectral region has been attributed to the success of a stable glow discharge of Kr at 10 atm. The pulse width of the VUV laser radiation is 400 ns (FWHM). The maximum output energy measured is as large as 150 μJ. (author)

Refractive microlenses produced by excimer laser machining of poly(methyl methacrylate)

DEFF Research Database (Denmark)

Jensen, Martin Frøhling; Krühne, Ulrich; H., L.

2005-01-01

A method has been developed whereby refractive microlenses can be produced in poly (methyl methacrylate) by excimer laser irradiation at λ = 248 nm. The lenses are formed by a combined photochemical and thermal process. The lenses are formed as depressions in the substrate material (negative foca...

[The 308 nm Excimer laser for the treatment of psoriasis and inflammatory skin diseases].

Science.gov (United States)

Fritz, K; Salavastru, C

2018-01-01

Overall, the 308 nm Excimer laser enables not only a more effective and safer UVB therapy than classical UV phototherapy, but also targeted irradiation in higher doses with a lower cumulative load, which results in faster healing of mainly circumscribed skin changes. This also applies to therapy-resistant residual lesions which, despite systemic therapy, did not diminish. Combination therapies usually improve the result and enable the dose of UVB and systemic medication to be reduced. Excimer laser therapy can be used for an increasing number of skin diseases, especially those that respond to phototherapy or photochemotherapy.

Fabrication of biosynthetic vascular prostheses by 193-nm excimer laser radiation

Science.gov (United States)

Husinsky, Wolfgang; Csek, Ch.; Bartel, A.; Grabenwoeger, M.; Fitzal, F.; Wolner, Ernst

1998-05-01

This study was undertaken to investigate the feasibility of transmural capillary ingrowth into the inner surface of biosynthetic vascular prostheses (OmniflowTM) through perforations created by an excimer-laser, thus inducing an endothelial cell coverage. The biosynthetic vascular prostheses (10 cm length, 6 mm (phi) ) were perforated with an excimer laser ((phi) of the holes 50 - 100 micrometer, distance 4 mm) and implanted into the carotid arteries of 8 sheep. The laser tissue interaction process of 193 nm radiation ensures minimal thermal damage to the prostheses. They were compared to untreated OmniflowTM prostheses implanted at the contralateral side. Three months after implantation the prostheses were explanted and evaluated by gross morphology, histological examination and scanning electron microscopy. Scanning electron microscopy showed endothelial cells in the midgraft portion of all perforated prostheses, whereas collagen fibers, fibrin meshwork and activated platelets formed the inner layer in 6 out of 8 untreated OmniflowTM prostheses. It can be concluded, that spontaneous endothelialization of biosynthetic vascular prostheses can be achieved by transmural capillary ingrowth through perforations in the wall of the prostheses in an experimental sheep model.

Visual and refractive outcomes following myopic laser-assisted subepithelial keratectomy with a flying-spot excimer laser.

Science.gov (United States)

McAlinden, Colm; Skiadaresi, Eirini; Moore, Jonathan E

2011-05-01

To investigate the visual and refractive outcomes following laser-assisted subepithelial keratectomy (LASEK) surgery with a flying-spot excimer laser. Private practice, Ireland. Case series. In this prospective study, the mean manifest spherical equivalent (SE), sphere, and cylinder were measured preoperatively. All eyes had LASEK surgery with an aberration-free algorithm with the Schwind Amaris excimer laser. Outcomes measured at 1 month, 6 months, and 1 year were uncorrected distance visual acuity (UDVA), manifest refraction, corrected distance visual acuity, contrast sensitivity, aberrometry, and complications. Accuracy, efficacy, and safety were evaluated at 1 year. Preoperatively, the mean SE, sphere, and cylinder in the 80 eyes (48 patients) were -3.58 diopters (D) ± 2.00 (SD), -3.23 ± 1.93 D, and -0.85 ± 0.65 D, respectively. One year postoperatively, the mean SE was -0.00 ± 0.22 D; 57 eyes (71%) were within -0.13 to +0.13 D of the SE, and 71 eyes (98%) were within ±0.50 D. The mean UDVA was -0.06 ± 0.07 logMAR, with an efficacy index of 1.04. The postoperative SE was stable between 1 month, 3 months, and 1 year. One eye (1%) had a change in SE by more than 0.50 D at 6 months and 1 year. There were no statistically significant differences in any aberrations at 1 year. The contrast sensitivity improved from 1.66 ± 0.17 log units preoperatively to 1.72 ± 0.15 log units at 1 month postoperatively (P=.0003), which was unchanged at 6 months and 1 year. This study demonstrated the effectiveness of LASEK for the treatment of myopia with this flying-spot excimer laser. Copyright © 2011 ASCRS and ESCRS. Published by Elsevier Inc. All rights reserved.

Fabrication of SERS Active Surface on Polyimide Sample by Excimer Laser Irradiation

Directory of Open Access Journals (Sweden)

T. Csizmadia

2014-01-01

Full Text Available A possible application of excimer laser irradiation for the preparation of surface enhanced Raman spectroscopy (SERS substrate is demonstrated. A polyimide foil of 125 μm thickness was irradiated by 240 pulses of focused ArF excimer laser beam (λ = 193 nm, FWHM = 20 ns. The applied fluence was varied between 40 and 80 mJ/cm2. After laser processing, the sample was coated with 40 nm silver by PLD in order to create a conducting layer required for the SERS application. The SERS activity of the samples was tested by Raman microscopy. The Raman spectra of Rhodamine 6G aqueous solution (c=10−3 mol/dm3 were collected from the patterned and metalized areas. For areas prepared at 40–60 mJ/cm2 laser fluences, the measured Raman intensities have shown a linear dependence on the applied laser fluence, while above 60 mJ/cm2 saturation was observed. The morphology of the SERS active surface areas was investigated by scanning electron microscopy. Finite element modeling was performed in order to simulate the laser-absorption induced heating of the polyimide foil. The simulation resulted in the temporal and spatial distribution of the estimated temperature in the irradiated polyimide sample, which are important for understanding the structure formation process.

Physical and optical limitations using ArF-excimer and Er:YAG lasers for PRK

Science.gov (United States)

Semchishen, Vladimir A.; Mrochen, Michael; Seiler, Theo

1998-06-01

The Erbium:YAG laser emitting at a wavelength of 2,94 micrometer have been promised as an alternative laser for the ArF-excimer laser (193 nm) in photorefractive keratectomy (PRK). This report discusses the limitations of laser parameters such as wavelength, energy density and pulse duration for the ablation of the cornea. In addition, the melting process during ablation on the corneal surface roughness may play a role.

Excimer laser processing of inkjet-printed and sputter-deposited transparent conducting SnO2:Sb for flexible electronics

International Nuclear Information System (INIS)

Cranton, Wayne M.; Wilson, Sharron L.; Ranson, Robert; Koutsogeorgis, Demosthenes C.; Chi Kuangnan; Hedgley, Richard; Scott, John; Lipiec, Stephen; Spiller, Andrew; Speakman, Stuart

2007-01-01

The feasibility of low-temperature fabrication of transparent electrode elements from thin films of antimony-doped tin oxide (SnO 2 :Sb, ATO) has been investigated via inkjet printing, rf magnetron sputtering and post-deposition excimer laser processing. Laser processing of thin films on both glass and plastic substrates was performed using a Lambda Physik 305i excimer laser, with fluences in the range 20-100 mJ cm -2 reducing sheet resistance from as-deposited values by up to 3 orders of magnitude. This is consistent with TEM analysis of the films that shows a densification of the upper 200 nm of laser-processed regions

The effect of microarc oxidation and excimer laser processing on the microstructure and corrosion resistance of Zr–1Nb alloy

International Nuclear Information System (INIS)

Yang, Jiaoxi; Wang, Xin; Wen, Qiang; Wang, Xibing; Wang, Rongshan; Zhang, Yanwei; Xue, Wenbin

2015-01-01

The main purpose of this research was to investigate the effect of microarc oxidation (MAO) and excimer laser processing on the corrosion resistance of Zr–1Nb alloy in service environment. The pre-oxide film was fabricated on the surface of Zr–1Nb cladding tubes by MAO processing, and then subjected to KrF excimer laser irradiation. The surface morphology of the pre-oxide film was observed using a scanning electron microscope; phase compositions and quantities were determined using an X-ray diffraction; surface roughness was determined using a profilometer; and thermal expansion coefficient was measured using a dilatometer. Autoclave experiments were conducted for 94 days in an aqueous condition of 360 °C under 18.6 MPa in 0.01 mol/L LiOH solutions. The results showed that MAO + laser treatment resulted in a significant increase in the corrosion resistance of Zr–1Nb cladding tubes at high temperatures, because laser melting and etching could lead to a reduction in surface roughness and an increase in compactness of the pre-oxide film, and laser processing could promote the transformation of m-ZrO 2 phase to t-ZrO 2 phase. The best corrosion resistance was obtained when the pulse energy was 500 mJ, scanning speed was 0.13 mm/s, and pulse number was 2400. - Highlights: • Pre-oxide film was fabricated on Zr–1Nb cladding tube by MAO+ excimer laser processing. • Excimer laser processing induced the transformation of m-ZrO 2 to t-ZrO 2 . • The Rietveld quantitative analysis of the pre-oxide film was made. • We investigated the high temperature corrosion and corrosion mechanism of the oxide film. • The parameters of MAO+ excimer laser processing were optimized.

The effect of microarc oxidation and excimer laser processing on the microstructure and corrosion resistance of Zr–1Nb alloy

Energy Technology Data Exchange (ETDEWEB)

Yang, Jiaoxi, E-mail: yangjiaoxi@bjut.edu.cn [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Wang, Xin; Wen, Qiang; Wang, Xibing [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Wang, Rongshan; Zhang, Yanwei [Suzhou Nuclear Power Research Institute, Suzhou 215004 (China); Xue, Wenbin [College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China)

2015-12-15

The main purpose of this research was to investigate the effect of microarc oxidation (MAO) and excimer laser processing on the corrosion resistance of Zr–1Nb alloy in service environment. The pre-oxide film was fabricated on the surface of Zr–1Nb cladding tubes by MAO processing, and then subjected to KrF excimer laser irradiation. The surface morphology of the pre-oxide film was observed using a scanning electron microscope; phase compositions and quantities were determined using an X-ray diffraction; surface roughness was determined using a profilometer; and thermal expansion coefficient was measured using a dilatometer. Autoclave experiments were conducted for 94 days in an aqueous condition of 360 °C under 18.6 MPa in 0.01 mol/L LiOH solutions. The results showed that MAO + laser treatment resulted in a significant increase in the corrosion resistance of Zr–1Nb cladding tubes at high temperatures, because laser melting and etching could lead to a reduction in surface roughness and an increase in compactness of the pre-oxide film, and laser processing could promote the transformation of m-ZrO{sub 2} phase to t-ZrO{sub 2} phase. The best corrosion resistance was obtained when the pulse energy was 500 mJ, scanning speed was 0.13 mm/s, and pulse number was 2400. - Highlights: • Pre-oxide film was fabricated on Zr–1Nb cladding tube by MAO+ excimer laser processing. • Excimer laser processing induced the transformation of m-ZrO{sub 2} to t-ZrO{sub 2}. • The Rietveld quantitative analysis of the pre-oxide film was made. • We investigated the high temperature corrosion and corrosion mechanism of the oxide film. • The parameters of MAO+ excimer laser processing were optimized.

Laser annealing of ion implanted silicon

International Nuclear Information System (INIS)

White, C.W.; Narayan, J.; Young, R.T.

1978-11-01

The physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit

Outcomes for Myopic LASIK With the MEL 90 excimer laser.

Science.gov (United States)

Reinstein, Dan Z; Carp, Glenn I; Lewis, Tariq A; Archer, Timothy J; Gobbe, Marine

2015-05-01

To evaluate the visual outcomes of myopic LASIK performed with the MEL 90 excimer laser (Carl Zeiss Meditec AG, Jena, Germany) using the Triple-A profile with a 500-Hz pulse rate. Retrospective analysis of the first 286 myopic LASIK procedures (147 patients) by two experienced surgeons in which the VisuMax femtosecond laser and MEL 90 excimer laser (Carl Zeiss Meditec) were used following a standardized surgical technique. Inclusion criteria were preoperative spherical equivalent refraction (SEQ) up to -10.38 diopters (D), cylinder up to 5.00 D, and corrected distance visual acuity (CDVA) of 20/25 or better. No nomogram adjustments were made. Patients were observed for 3 months. Flap thickness was between 80 and 110 µm and optical zone was between 6 and 7 mm. Standard outcomes analysis was performed. Preoperatively, mean SEQ was -3.83 ± 1.83 D (range: -0.13 to -10.38 D) and mean cylinder was -0.94 ± 0.86 D (range: 0.00 to -5.00 D). Mean age was 36.4 years (range: 18.2 to 74.1 years) with 50% female patients. Of this population, 138 eyes were treated by one surgeon and 148 eyes by another. The mean predictability of SEQ was -0.13 ± 0.34 D (range: -1.00 to +1.00 D). Postoperative SEQ was ± 0.50 D in 88% and ± 1.00 D in 100% of eyes. Preoperative CDVA was 20/20 or better in 97% of eyes. Postoperative uncorrected distance visual acuity was 20/20 or better in 92% and 20/25 or better in 99% of eyes. One line of CDVA was lost in 6% of eyes and no eyes lost two or more lines. There was statistically significant improvement in mesopic contrast sensitivity (CSV-1000) at 3 (P = .021), 6, 12, and 18 (all P ≤.001) cycles per degree. The MEL 90 excimer laser using the Triple-A ablation profile with a 500-Hz pulse rate was found to achieve a small but real increase in contrast sensitivity and high efficacy for myopia up to -10.00 D and cylinder up to 5.00 D without the need for a nomogram adjustment. Copyright 2015, SLACK Incorporated.

Excimer laser surface modification: Process and properties

Energy Technology Data Exchange (ETDEWEB)

Jervis, T.R.; Nastasi, M. [Los Alamos National Lab., NM (United States); Hirvonen, J.P. [Technical Research Institute, Espoo (Finland). Metallurgy Lab.

1992-12-01

Surface modification can improve materials for structural, tribological, and corrosion applications. Excimer laser light has been shown to provide a rapid means of modifying surfaces through heat treating, surface zone refining, and mixing. Laser pulses at modest power levels can easily melt the surfaces of many materials. Mixing within the molten layer or with the gas ambient may occur, if thermodynamically allowed, followed by rapid solidification. The high temperatures allow the system to overcome kinetic barriers found in some ion mixing experiments. Alternatively, surface zone refinement may result from repeated melting-solidification cycles. Ultraviolet laser light couples energy efficiently to the surface of metallic and ceramic materials. The nature of the modification that follows depends on the properties of the surface and substrate materials. Alloying from both gas and predeposited layer sources has been observed in metals, semiconductors, and ceramics as has surface enrichment of Cr by zone refinement of stainless steel. Rapid solidification after melting often results in the formation of nonequilibrium phases, including amorphous materials. Improved surface properties, including tribology and corrosion resistance, are observed in these materials.

Clinical results of PRK touch-up using Chiron/Technolas Keracor 116 excimer laser

Science.gov (United States)

Davidian, Mary E.; Keates, Richard H.; Ren, Qiushi

1995-05-01

Regression of effect as well as undercorrection are well established complications of excimer photorefractive keratectomy for the correction of myopia. In thirteen eyes initially treated with the VISX Taunton excimer laser and then retreated with the Chiron Technolas laser, the minimum follow-up time was six months. The mean postoperative refraction at six months was -0.442 +/- 0.996 D (diopters), significantly different from the pretreatment mean of -1.904 +/- 1.297 D. At six months after retreatment (10/13 eyes) 76.9% had an uncorrected visual acuity greater than or equal to 20/40 and (10/13 eyes) 76.9% were within 1 diopter of emmetropia. Only one eye had a significant increase in postoperative haze. The results of this study indicate that the majority of photorefractive keratectomy regressions and undercorrections can be successfully retreated.

SBS pulse compression for excimer inertial fusion energy drivers

International Nuclear Information System (INIS)

Linford, G.J.

1994-01-01

A key requirement for the development of commercial fusion power plants utilizing inertial confinement fusion (ICF) as a source of thermonuclear power is the availability of reliable, efficient laser drivers. These laser drivers must be capable of delivering UV optical pulses having energies of the order of 5MJ to cryogenic deuterium-tritium (D/T) ICF targets. The current requirements for laser ICF target irradiation specify the laser wavelength, λ ca. 250 nm, pulse duration, τ p ca. 6 ns, bandwidth, Δλ ca. 0.1 nm, polarization state, etc. Excimer lasers are a leading candidate to fill these demanding ICF driver requirements. However, since excimer lasers are not storage lasers, the excimer laser pulse duration, τ pp , is determined primarily by the length of the excitation pulse delivered to the excimer laser amplifier. Pulsed power associated with efficiently generating excimer laser pulses has a time constant, τ pp which falls in the range, 30 τ p pp p . As a consequence, pulse compression is needed to convert the long excimer laser pulses to pulses of duration τ p . These main ICF driver pulses require, in addition, longer, lower power precursor pulses delivered to the ICF target before the arrival of the main pulse. Although both linear and non-linear optical (NLO) pulse compression techniques have been developed, computer simulations have shown that a ''chirped,'' self-seeded, stimulated Brillouin scattering (SBS) pulse compressor cell using SF 6 at a density, ρ ca. 1 amagat can efficiently compress krypton fluoride (KrF) laser pulses at λ=248 nm. In order to avoid the generation of output pulses substantially shorter than τ p , the optical power in the chirped input SBS ''seed'' beams was ramped. Compressed pulse conversion efficiencies of up to 68% were calculated for output pulse durations of τ p ca. ns

Green synthesis of selenium nanoparticles by excimer pulsed laser ablation in water

OpenAIRE

O. Van Overschelde; G. Guisbiers; R. Snyders

2013-01-01

Pure selenium nanoparticles were successfully synthesized by Liquid Phase - Pulsed Laser Ablation (LP-PLA) in de-ionized water. Excimer laser (248 nm) operating at low fluence (F ∼ 1 J/cm2) was used to generate colloidal solutions of selenium nanoparticles. The obtained selenium nanoparticles were characterized by UV-visible spectroscopy, Raman spectroscopy, Dynamic Light Scattering, and Transmission Electron Microscopy. We describe the multi-modal size distributions generated and use the cen...

Nebulae at keratoconus--the result after excimer laser removal.

Science.gov (United States)

Fagerholm, P; Fitzsimmons, T; Ohman, L; Orndahl, M

1993-12-01

Ten patients underwent excimer laser ablation due to nebula formation at keratoconus. The nebulae interfered significantly with contact lens fit or wearing time. The mean follow-up time in these patients was 16.5 months. Following surgery all patients could be successfully fitted with a contact lens and thereby obtain good visual acuity. Furthermore, contact lens wearing time was 8 hours or more in all cases. In 2 patients the nebulae recurred but were successfully retreated.

Excimer laser phototherapeutic keratectomy.

Science.gov (United States)

Ayres, Brandon D; Rapuano, Christopher J

2006-10-01

Anterior corneal pathology, such as corneal scars and corneal stromal dystrophies, can be visually devastating. Over the past decade, there was a shift in treatment of these conditions from corneal transplantation to phototherapeutic keratectomy (PTK) using the 193 nm excimer laser for visual restoration. We have reviewed the recent literature on techniques for performing and refining PTK and also on various pathologic conditions that can be treated with PTK. The primary indications for PTK include anterior corneal dystrophies, such as lattice, granular, and Reis-Bückler's dystrophy. PTK can produce significant visual improvement in these patients, and corneal transplantation or retransplantation can be delayed. Corneal degenerations, such as Salzmann's nodular degeneration, keratoconus nodules, and climatic droplet keratopathy, also can be successfully treated with PTK. Additionally, anterior corneal scars from such etiologies as trauma, corneal ulcers, and prior refractive surgery can have visual improvement with PTK. In summary, PTK is a powerful tool for the management of anterior corneal pathology. In a properly selected and well-counseled patient, PTK can significantly improve vision and quality of life.

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

Science.gov (United States)

Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

2017-11-01

High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

Agglomeration of amorphous silicon film with high energy density excimer laser irradiation

International Nuclear Information System (INIS)

He Ming; Ishihara, Ryoichi; Metselaar, Wim; Beenakker, Kees

2007-01-01

In this paper, agglomeration phenomena of amorphous Si (α-Si) films due to high energy density excimer laser irradiation are systematically investigated. The agglomeration, which creates holes or breaks the continuous Si film up into spherical beads, is a type of serious damage. Therefore, it determines an upper energy limit for excimer laser crystallization. It is speculated that the agglomeration is caused by the boiling of molten Si. During this process, outbursts of heterogeneously nucleated vapor bubbles are promoted by the poor wetting property of molten silicon on the SiO 2 layer underneath. The onset of the agglomeration is defined by extrapolating the hole density as a function of the energy density of the laser pulse. A SiO 2 capping layer (CL) is introduced on top of the α-Si film to investigate its influence on the agglomeration. It is found that effects of the CL depend on its thickness. The CL with a thickness less than 300 nm can be used to suppress the agglomeration. A thin CL acts as a confining layer and puts a constraint on bubble burst, and hence suppresses the agglomeration

XeCl excimer laser with new prism resonator configurations and its performance characteristics

Energy Technology Data Exchange (ETDEWEB)

Benerji, N. S., E-mail: nsb@rrcat.gov.in, E-mail: bsingh@rrcat.gov.in; Singh, A.; Varshnay, N.; Singh, Bijendra, E-mail: nsb@rrcat.gov.in, E-mail: bsingh@rrcat.gov.in [Excimer Laser Section, LMPD, Raja Ramanna Center for Advanced Technology, Indore 452013 (India)

2015-07-15

New resonator cavity configurations, namely, the prism resonator and unstable prism resonator, are demonstrated for the first time in an excimer (XeCl) laser with interesting and novel results. High misalignment tolerance ∼50 mrad is achieved with considerably reduced beam divergence of less than ∼1 mrad without reduction in output power capabilities of the laser. The misalignment tolerance of ∼50 mrad is a dramatic improvement of ∼25 times compared to ∼2 mrad normally observed in standard excimer laser with plane-plane cavity. Increase in depth of focus from 3 mm to 5.5 mm was also achieved in case of prism resonator configuration with an improvement of about 60%. Unstable prism resonator configuration is demonstrated here in this paper with further reduction in beam divergence to about 0.5 mrad using plano-convex lens as output coupler. The misalignment tolerance in case of unstable prism resonator was retained at about 30 mrad which is a high value compared to standard unstable resonators. The output beam spot was completely filled with flat-top profile with prism resonator configurations, which is desired for various material processing applications. Focusing properties and beam divergence in case of prism resonator have been investigated using SEM (scanning electron microscope) images. SEM images of the focused spot size (∼20 μm holes) on metal sheet indicate beam divergence of about 0.05 mrad which is about 1.5 times diffraction limit. Energy contained in this angle is thus sufficient for micro-machining applications. Clean and sharp edges of the micro-holes show high pointing stability with multiple shot exposures. Such characteristics of the excimer laser system will be extremely useful in micro-machining and other field applications.

Excimer-laser-induced permanent electrical conductivity in solid C60 films

International Nuclear Information System (INIS)

Ning, D.; Lou, Q.H.; Dong, J.X.; Wei, Y.R.

1996-01-01

After being irradiated in air by a XeCl (308 nm) excimer laser, the electrical conductivity of solid thin-film C 60 has been improved by more than six orders of magnitudes. The products resulting from laser irradiation of C 60 films have been investigated by Raman scattering and the onset of conductivity can be attributed to laser-induced oxygenation and disintegration of the fullerene. Irradiated by ∼40 ns laser pulses with different fluence, products with different microstructure were observed. At lower fluence, the Raman features of microcrystalline graphite and fullerene polymer were observed. At a fluence just below the ablation threshold (36 mJ/cm 2 ), the fullerene molecules in the film were disintegrated completely and transformed to amorphous graphite. (orig.). With 5 figs

SBS pulse compression for excimer inertial fusion energy drivers

Energy Technology Data Exchange (ETDEWEB)

Linford, G.J. [TRW Space and Electronics Group, Redondo Beach, CA (United States). Space and Technology Div.

1994-12-31

A key requirement for the development of commercial fusion power plants utilizing inertial confinement fusion (ICF) as a source of thermonuclear power is the availability of reliable, efficient laser drivers. These laser drivers must be capable of delivering UV optical pulses having energies of the order of 5MJ to cryogenic deuterium-tritium (D/T) ICF targets. The current requirements for laser ICF target irradiation specify the laser wavelength, {lambda} ca. 250 nm, pulse duration, {tau}{sub p} ca. 6 ns, bandwidth, {Delta}{lambda} ca. 0.1 nm, polarization state, etc. Excimer lasers are a leading candidate to fill these demanding ICF driver requirements. However, since excimer lasers are not storage lasers, the excimer laser pulse duration, {tau}{sub pp}, is determined primarily by the length of the excitation pulse delivered to the excimer laser amplifier. Pulsed power associated with efficiently generating excimer laser pulses has a time constant, {tau}{sub pp} which falls in the range, 30 {tau}{sub p}<{tau}{sub pp}<100{tau}{sub p}. As a consequence, pulse compression is needed to convert the long excimer laser pulses to pulses of duration {tau}{sub p}. These main ICF driver pulses require, in addition, longer, lower power precursor pulses delivered to the ICF target before the arrival of the main pulse. Although both linear and non-linear optical (NLO) pulse compression techniques have been developed, computer simulations have shown that a ``chirped,`` self-seeded, stimulated Brillouin scattering (SBS) pulse compressor cell using SF{sub 6} at a density, {rho} ca. 1 amagat can efficiently compress krypton fluoride (KrF) laser pulses at {lambda}=248 nm. In order to avoid the generation of output pulses substantially shorter than {tau}{sub p}, the optical power in the chirped input SBS ``seed`` beams was ramped. Compressed pulse conversion efficiencies of up to 68% were calculated for output pulse durations of {tau}{sub p} ca. ns.

AFM study of excimer laser patterning of block-copolymer: Creation of ordered hierarchical, hybrid, or recessed structures

International Nuclear Information System (INIS)

Švanda, Jan; Siegel, Jakub; Švorčík, Vaclav; Lyutakov, Oleksiy

2016-01-01

Highlights: • Combination of bottom-up (BCP separation) and top-down (laser patterning) technologies allows obtaining hierarchical structures. • Surface morphologies were determined by the order of patterning steps (laser modification, annealing, surface reconstruction). • Tuning the order of steps enables the reorientation of BCP domain at large scale, fabrication of hierarchical, hybrid or recessed structures. • The obtained structures can find potential applications in nanotechnology, plasmonics, information storage, sensors and smart surfaces. - Abstract: We report fabrication of the varied range of hierarchical structures by combining bottom-up self-assembly of block copolymer poly(styrene-block-vinylpyridine) (PS-b-P4VP) with top-down excimer laser patterning method. Different procedures were tested, where laser treatment was applied before phase separation and after phase separation or phase separation and surface reconstruction. Laser treatment was performed using either polarized laser light with the aim to create periodical pattern on polymer surface or non-polarized light for preferential removing of polystyrene (PS) part from PS-b-P4VP. Additionally, dye was introduced into one part of block copolymer (P4VP) with the aim to modify its response to laser light. Resulting structures were analyzed by XPS, UV–vis and AFM techniques. Application of polarized laser light leads to creation of structures with hierarchical, recessed or hybrid geometries. Non-polarized laser beam allows pronouncing the block copolymer phase separated structure. Tuning the order of steps or individual step conditions enables the efficient reorientation of block-copolymer domain at large scale, fabrication of hierarchical, hybrid or recessed structures. The obtained structures can find potential applications in nanotechnology, photonics, plasmonics, information storage, optical devices, sensors and smart surfaces.

Effect of volatile compounds on excimer laser power delivery.

Science.gov (United States)

Van Horn, Stewart D; Hovanesian, John A; Maloney, Robert K

2002-01-01

To determine whether vapors from perfume, hairspray, oil-based paint, or water-based paint affect excimer laser beam power delivery at the corneal surface. We measured the power delivery of an Apex Plus laser before, during, and after exposure to vapors from the following volatile compounds: three types of perfume, hair spray, an oil-based paint, and a water-based paint. A digital calorimeter was used to measure the steady-state beam power of the laser during laser discharge at the corneal plane. Multiple trials were run with each compound, and the change in laser energy over time was examined to determine if any of the compounds caused degradation of the laser optics. The presence of a volatile compound in the room caused no change in mean laser energy in comparison to before and after the compound was present. However, perfumes caused a progressive decline in laser beam power throughout the trials. Controlling for this progressive decline, there was no significant difference from perfume to perfume. None of the compounds tested caused a decline in laser beam power while present in the room. However, the presence of any perfume caused a deterioration in beam power over time, suggesting a degradation of the laser optics for all perfumes. Laser centers should consider advising their patients and staff to not wear perfumes in the laser suite.

Time-resolved spectroscopy and fluorescence resonance energy transfer in the study of excimer laser damage of chromatin

Energy Technology Data Exchange (ETDEWEB)

Radu, L. [Department of Molecular Genetics and Radiobiology, Babes National Institute, Bucharest (Romania)], E-mail: lilianajradu@yahoo.fr; Mihailescu, I. [Department of Lasers, Laser, Plasma and Radiation Physics Institute, Bucharest (Romania); Radu, S. [Department of Computer Science, Polytechnics University, Bucharest (Romania); Gazdaru, D. [Department of Biophysics, Bucharest University (Romania)

2007-09-21

The analysis of chromatin damage produced by a 248 nm excimer laser radiation, for doses of 0.3-3 MJ/m{sup 2} was carried out by time-resolved spectroscopy and fluorescence resonance energy transfer (FRET). The chromatin was extracted from a normal and a tumoral tissue of Wistar rats. The decrease with laser dose of the relative contribution of the excited state lifetimes of ethidium bromide (EtBr) bounded to chromatin constitutes an evidence of the reduction of chromatin deoxyribonucleic acid (DNA) double-strand structure. FRET was performed from dansyl chloride to acridine orange, both coupled to chromatin. The increase of the average distance between these ligands, under the action of laser radiation, reflects a loosening of the chromatin structure. The radiosensitivity of tumor tissue chromatin is higher than that of a normal tissue. The determination of the chromatin structure modification in an excimer laser field can be of interest in laser therapy.

Time-resolved spectroscopy and fluorescence resonance energy transfer in the study of excimer laser damage of chromatin

International Nuclear Information System (INIS)

Radu, L.; Mihailescu, I.; Radu, S.; Gazdaru, D.

2007-01-01

The analysis of chromatin damage produced by a 248 nm excimer laser radiation, for doses of 0.3-3 MJ/m 2 was carried out by time-resolved spectroscopy and fluorescence resonance energy transfer (FRET). The chromatin was extracted from a normal and a tumoral tissue of Wistar rats. The decrease with laser dose of the relative contribution of the excited state lifetimes of ethidium bromide (EtBr) bounded to chromatin constitutes an evidence of the reduction of chromatin deoxyribonucleic acid (DNA) double-strand structure. FRET was performed from dansyl chloride to acridine orange, both coupled to chromatin. The increase of the average distance between these ligands, under the action of laser radiation, reflects a loosening of the chromatin structure. The radiosensitivity of tumor tissue chromatin is higher than that of a normal tissue. The determination of the chromatin structure modification in an excimer laser field can be of interest in laser therapy

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

International Nuclear Information System (INIS)

Frigerio, J; Ballabio, A; Isella, G; Gallacher, K; Millar, R; Paul, D; Gilberti, V; Baldassarre, L; Ortolani, M; Milazzo, R; Napolitani, E; Maiolo, L; Minotti, A; Pecora, A; Bottegoni, F; Biagioni, P

2017-01-01

High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  10 19 cm −3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  10 20 cm −3 . Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved. (paper)

Green synthesis of selenium nanoparticles by excimer pulsed laser ablation in water

Directory of Open Access Journals (Sweden)

O. Van Overschelde

2013-10-01

Full Text Available Pure selenium nanoparticles were successfully synthesized by Liquid Phase - Pulsed Laser Ablation (LP-PLA in de-ionized water. Excimer laser (248 nm operating at low fluence (F ∼ 1 J/cm2 was used to generate colloidal solutions of selenium nanoparticles. The obtained selenium nanoparticles were characterized by UV-visible spectroscopy, Raman spectroscopy, Dynamic Light Scattering, and Transmission Electron Microscopy. We describe the multi-modal size distributions generated and use the centrifugation method to isolate the smallest nanoparticles (∼60 nm in diameter.

Improving the ablation efficiency of excimer laser systems with higher repetition rates through enhanced debris removal and optimized spot pattern.

Science.gov (United States)

Arba-Mosquera, Samuel; Klinner, Thomas

2014-03-01

To evaluate the reasons for the required increased radiant exposure for higher-repetition-rate excimer lasers and determine experimentally possible compensations to achieve equivalent ablation profiles maintaining the same single-pulse energies and radiant exposures for laser repetition rates ranging from 430 to 1000 Hz. Schwind eye-tech-solutions GmbH and Co. KG, Kleinostheim, Germany. Experimental study. Poly(methyl methacrylate) (PMMA) plates were photoablated. The pulse laser energy was maintained during all experiments; the effects of the flow of the debris removal, the shot pattern for the correction, and precooling the PMMA plates were evaluated in terms of achieved ablation versus repetition rate. The mean ablation performance ranged from 88% to 100%; the variability between the profile measurements ranged from 1.4% to 6.2%. Increasing the laser repetition rate from 430 Hz to 1000 Hz reduced the mean ablation performance from 98% to 91% and worsened the variability from 1.9% to 4.3%. Increasing the flow of the debris removal, precooling the PMMA plates to -18°C, and adapting the shot pattern for the thermal response of PMMA to excimer ablation helped stabilize the variability. Only adapting the shot pattern for the thermal response of PMMA to excimer ablation helped stabilize the mean ablation performance. The ablation performance of higher-repetition-rate excimer lasers on PMMA improved with improvements in the debris removal systems and shot pattern. More powerful debris removal systems and smart shot patterns in terms of thermal response improved the performance of these excimer lasers. Copyright © 2014 ASCRS and ESCRS. Published by Elsevier Inc. All rights reserved.

Keratomodelling with low-intensity ultraviolet radiation of excimer laser

International Nuclear Information System (INIS)

Vitrishchak, I.B.; Vorontsov, V.V.; Murzin, A.G.; Polikarpov, S.S.; Soms, L.N.

1990-01-01

A study was made on possibility of keratomodelling with low-intensive UV-radiation of excimer laser with subablation energy density in a pulse. Model specimens of polymers and cornea tissue were used. It is shown that the range of threshold energy density in a pulse expands with increase of UV-radiation wave length and contracts with increase of pulse repetition frequency. This range appeared to be different for polymers and cornea tissue. It was revealed that cornea tissue represented a complex high-molecular bipolymer with high water content

Excimer-laser-irradiation-induced effects in C60 films for photovoltaic applications

International Nuclear Information System (INIS)

Narayanan, K.L.; Yamaguchi, M.; Azuma, H.

2002-01-01

Thin films of fullerene C 60 deposited by the molecular-beam epitaxy method have been subjected to a 248 nm excimer laser for various timings. Reduction in the electrical resistance of the films and the spectral evolution of the D and G bands in the Raman spectra, due to the sharp tendency towards graphitization accompanied by an increasing level of structural disorder, are observed during laser irradiation. Based on the above results, an attempt has been carried out on these irradiated C 60 films to make a device sandwiched with n-type Si, and the photovoltaic parameters are reported as a function of the laser exposure times

Melting phenomenon and laser annealing in semiconductors

International Nuclear Information System (INIS)

Narayan, J.

1981-03-01

The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

Krypton Gas for High Quality Single Wall Carbon Nanotubes Synthesis by KrF Excimer Laser Ablation

Directory of Open Access Journals (Sweden)

Jasim Al-Zanganawee

2015-01-01

Full Text Available We report for the first time the production of single wall carbon nanotubes (SWCNTs by KrF excimer laser ablation method under the krypton gas atmosphere. For the ablation experiment 450 mJ energy and 30 Hz repetition rate KrF excimer laser was used, and the target was prepared with the following composition: 0.6% Ni, 0.6% Co, and 98.8% C (atomic percentage. The ablation product was characterized by confocal Raman microspectroscopy, transmission electron microscopy (TEM, scanning electron microscopy (SEM, and thermogravimetric analysis (TGA. The SWCNTs obtained are a mixture of semiconducting and metallic types with narrow diameters distribution of 1.26 to 1.49 nm, are micrometers long, and contain low amount of graphite and amorphous carbon.

Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures induced by laser irradiation

International Nuclear Information System (INIS)

Bayati, M. R.; Molaei, R.; Narayan, J.; Joshi, S.; Narayan, R. J.

2013-01-01

We have demonstrated dark hydrophilicity of single crystalline rutile TiO 2 (100) thin films, in which rapid switching from a hydrophobic to a hydrophilic surface was achieved using nanosecond excimer laser irradiation. The TiO 2 /YSZ/Si(001) single crystalline heterostructures were grown by pulsed laser deposition and were subsequently irradiated by a single pulse of a KrF excimer laser at several energies. The wettability of water on the surfaces of the samples was evaluated. The samples were hydrophobic prior to laser annealing and turned hydrophilic after laser annealing. Superhydrophilic surfaces were obtained at higher laser energy densities (e.g., 0.32 J.cm −2 ). The stoichiometries of the surface regions of the samples before and after laser annealing were examined using XPS. The results revealed the formation of oxygen vacancies on the surface, which are surmised to be responsible for the observed superhydrophilic behavior. According to the AFM images, surface smoothening was greater in films that were annealed at higher laser energy densities. The samples exhibited hydrophobic behavior after being placed in ambient atmosphere. The origin of laser induced wetting behavior was qualitatively understood to stem from an increase of point defects near the surface, which lowered the film/water interfacial energy. This type of rapid hydrophobic/hydrophilic switching may be used to facilitate fabrication of electronic and photonic devices with novel properties.

Advanced excimer-based crystallization systems for production solutions

International Nuclear Information System (INIS)

Simon, F.; Brune, J.; Herbst, L.

2006-01-01

Line beam excimer laser annealing (ELA) is a well-known technique for thin Si-film crystallization and established in LTPS mass production. With introduction of sequential lateral solidification (SLS) some aspects such as crystalline quality, throughput and flexibility regarding the substrate size could be improved, but for OLED manufacturing still further process development is necessary. This paper discusses line beam ELA and SLS-techniques that might enable process engineers to make polycrystalline-silicon (poly-Si) films with a high degree of uniformity and quality as required for system on glass (SOG) and active matrix organic light emitting displays (AMOLED). Equipment requirements are discussed and compared to previous standards. SEM-images of process examples are shown in order to demonstrate the viability

LASIK for myopia and astigmatism using the SCHWIND AMARIS excimer laser: an international multicenter trial.

Science.gov (United States)

Arbelaez, Maria Clara; Aslanides, Ioannis M; Barraquer, Carmen; Carones, Francesco; Feuermannova, Alena; Neuhann, Tobias; Rozsival, Pavel

2010-02-01

To assess the efficacy, predictability, and safety of LASIK for the surgical correction of low to moderate myopia with astigmatism using the SCHWIND AMARIS excimer laser. Six international study sites enrolled 358 eyes with a manifest refraction spherical equivalent (MRSE) from -0.50 to -7.38 diopters (D) (mean sphere: -3.13+/-1.58 D) with up to -5.00 D of astigmatism (mean: -0.69+/-0.67 D). All eyes underwent treatment with the nonwavefront-guided aspheric algorithm of the SCHWIND AMARIS excimer laser. All eyes were targeted for emmetropia. Refractive outcomes and corneal higher order aberrations were analyzed pre- and postoperatively. Visual quality was assessed using photopic and mesopic contrast sensitivity. Six-month postoperative outcomes are reported. At 6 months postoperative, the MRSE for all eyes was -0.21+/-0.20 D, and 96% (343/358) of eyes had MRSE within +/-0.50 D. Uncorrected visual acuity was 20/20 or better in 98% (351/358) of eyes, and no eyes lost 2 or more lines of best spectacle-corrected visual acuity. The total corneal higher order aberrations root-mean-square increased by 0.09 microm, spherical aberration increased by 0.08 microm, and coma increased by 0.04 microm postoperatively. Photopic and mesopic contrast sensitivity did not change 6 months postoperatively. Treatment of myopia with astigmatism using the SCHWIND AMARIS excimer laser is safe, efficacious, predictable, and maintains visual quality.

Annealing effects on electron-beam evaporated Al2O3 films

International Nuclear Information System (INIS)

Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

2005-01-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

Annealing effects on electron-beam evaporated Al 2O 3 films

Science.gov (United States)

Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

2005-04-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

Influence of Selected Parameters of XeCl Excimer Laser System on Characteristics of Radiation Pulses

International Nuclear Information System (INIS)

Pokora, L.; Iwanejko, L.

1998-01-01

We present the dependences of energy and duration of radiation pulses as well as efficiency of XeCl laser on selected parameters of the laser system such as: C 2 capacitance, the separating inductance, L S , the distance between electrodes in laser's chamber, d K and also the supply voltage, U 0 , composition, and pressure of the active-medium mixture of gases. Results of numerical computations relate to a three-component mixture of gases, He-Xe-HCl, of the active medium of the excimer laser. (author)

Micro flow-through PCR in a PMMA chip fabricated by KrF excimer laser.

Science.gov (United States)

Yao, Liying; Liu, Baoan; Chen, Tao; Liu, Shibing; Zuo, Tiechuan

2005-09-01

As the third PCR technology, micro flow-through PCR chip can amplify DNA specifically in an exponential fashion in vitro. Nowadays many academies in the world have successfully amplified DNA using their own-made flow-through PCR chip. In this paper, the ablation principle of PMMA at 248 nm excimer laser was studied, then a PMMA based flow-through PCR chip with 20 cycles was fabricated by excimer laser at 19 kv and 18 mm/min. The chip was bonded together with another cover chip at 105( composite function)C, 160 N and 20 minutes. In the end, it was integrated with electrical thermal thin films and Pt 100 temperature sensors. The temperature controllers was built standard PID digital temperature controller, the temperature control precision was +/- 0.2( composite function)C. The temperature grads between the three temperature zones were 16.5 and 22.2( composite function)C respectively, the gaps between the temperature zones could realize heat insulation.

A pulsed electron injector using a metal photocathode irradiated by an excimer laser

International Nuclear Information System (INIS)

Kauppila, T.J.; Builta, L.A.; Crutcher, J.K.; Elliott, J.C.; Moir, D.C.

1987-01-01

The hot cathode of an electron gun is replaced by a metallic photocathode driven by an excimer laser. The current, current density, and emittance of the 500-kV electron beam produced by the photoelectron source are presented. In addition, the temperature of the photocathode is varied to study the possibility of a hybrid source

Laser-annealed GaP OHMIC contacts for high-temperature devices

International Nuclear Information System (INIS)

Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

1980-01-01

The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

Excimer laser processing of Ti-6Al-4V

International Nuclear Information System (INIS)

Folkes, J.A.; Shibata, K.

1994-01-01

The effect of the excimer laser on the surface of Ti-6Al-4V is reported. Particular concentration is given to surface modification for potential materials processing applications. Results showed that: (1) there is an optimum energy for smoothing titanium; (2) at this energy density increasing the number of pulses has some, but not a significant, effect on the smoothing process; and (3) relatively smooth surfaces could be achieved at higher energy densities if the sample was processed in a helium atmosphere. Other typical surface modifications and features are also reported, including the effect of different gases on the process

Excimer laser coronary atherectomy in septal collaterals during retrograde recanalization of a chronic total occlusion

Directory of Open Access Journals (Sweden)

Bernward Lauer

2011-09-01

Full Text Available Management of chronic total occlusions has been refined through the development of a retrograde approach via collateral pathways. We describe the use of Excimer Laser Coronary Atherectomy in the septal collaterals. This appraoch was not yet described in the literature.

cw argon laser annealing of anodic oxide on GaAs

International Nuclear Information System (INIS)

Chakravarti, S.N.; Das, P.; Webster, R.T.; Bhat, K.N.

1981-01-01

Anodic oxide films (850 +- 50 A thick) grown on n + (100) bulk GaAs were subjected to selective area annealing using a cw argon laser operating at an output power of 1.2 W. Capacitance-voltage (C-V) measurements performed on Al-anodic oxide-GaAs MOS capacitor structures show that laser-annealed capacitor dots have greatly reduced field-induced hysteresis effects in their capacitance-voltage characteristics compared to the unannealed ones. The oxide leakage current also shows a significant improvement: the leakage current magnitude of MOS capacitors in laser-annealed oxide island is over four orders of magnitude less than the oxide region which was not exposed to the laser radiation. Dielectric breakdown measurement indicates that laser-annealed capacitors have considerably higher breakdown voltages, about a factor of 2 higher than the unannealed capacitors

Laser annealing heals radiation damage in avalanche photodiodes

Energy Technology Data Exchange (ETDEWEB)

Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

2017-12-15

Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

Excimer laser assisted very fast exfoliation and reduction of graphite oxide at room temperature under air ambient for Supercapacitors electrode

Science.gov (United States)

Malek Hosseini, S. M. B.; Baizaee, S. M.; Naderi, Hamid Reza; Dare Kordi, Ali

2018-01-01

Excimer laser was used for reduction and exfoliation of graphite oxide (GO) at room temperature under air ambient. The prepared excimer laser reduced graphite oxide (XLRGO) is characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), nitrogen adsorption/desorption (BET method), X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and UV-vis absorption techniques for surface, structural functional groups and band gap analysis. Electrochemical properties are investigated using cyclic voltammetry, galvanostatic charge-discharge, electrochemical impedance spectroscopy (EIS) and continues cyclic voltammetry (CCV) in 0.5 M Na2SO4 as electrolyte. Electrochemical investigations revealed that XLRGO electrode has enhanced supercapacitive performance including specific capacitance of 299 F/g at a scan rate of 2 mV/s. Furthermore, CCV measurement showed that XLRGO electrode kept 97.8% of its initial capacitance/capacity after 4000 cycles. The obtained results from electrochemical investigations confirm that the reduction of GO by using an excimer laser produces high-quality graphene for supercapacitor applications without the need for additional operations.

Microstructures induced by excimer laser surface melting of the SiC{sub p}/Al metal matrix composite

Energy Technology Data Exchange (ETDEWEB)

Qian, D.S., E-mail: Daishu.qian@postgrad.manchester.ac.uk; Zhong, X.L.; Yan, Y.Z.; Hashimoto, T.; Liu, Z.

2017-08-01

Highlights: • Microstructural analysis of the excimer laser-melted SiC{sub p}/AA2124;. • Analytical, FEM, and SPH simulation of the laser-material interaction;. • Mechanism of the formation of the laser-induced microstructure. - Abstract: Laser surface melting (LSM) was carried out on the SiC{sub p}/Al metal matrix composite (MMC) using a KrF excimer laser with a fluence of 7 J/cm{sup 2}. The re-solidification microstructure was characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM) equipped with energy dispersive X-ray detector, and X-ray diffraction (XRD) analysis. It was found that a 2.5 μm thick melted layer was formed in the near-surface region, in which dissolution of the intermetallics and removal of the SiC particles occurred. The thermal and material response upon laser irradiation was simulated using three models, i.e. analytical model, finite element model (FEM) and smoothed-particle hydrodynamics (SPH) model. The effect of SiC particles on the LSM process, the mechanism of the SiC removal and the re-solidification microstructures in the melted layer were discussed. The simulation results were in good agreement with the experimental results and contributed to the generic understanding of the re-solidification microstructures induced by ns-pulsed lasers.

Levels of interleukin-6 in tears before and after excimer laser treatment

OpenAIRE

Resan Mirko; Stanojević Ivan; Petković-Ćurčin Aleksandra; Pajić Bojan; Vojvodić Danilo

2015-01-01

Background/Aim. Immune response and consequent inflammatory process which originate on ocular surface after a trauma are mediated by cytokines. Photoablation of corneal stroma performed by excimer laser causes surgically induced trauma. Interleukin-6 (IL-6) is mostly known as a proinflammatory cytokine. However, it also has regenerative and anti-inflammatory effects. It is supposed that this cytokine is likely to play a significant role in the process of co...

Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon

International Nuclear Information System (INIS)

Wilson, S.R.; Appleton, B.R.; White, C.W.; Narayan, J.; Greenwald, A.C.

1978-11-01

Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As + ions to a dose of approx. 1 x 10 16 ions/cm 2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery

In-vitro ablation of fibrocartilage by XeCl excimer laser

Science.gov (United States)

Buchelt, Martin; Papaioannou, Thanassis; Fishbein, Michael C.; Peters, Werner; Beeder, Clain; Grundfest, Warren S.

1991-07-01

A 308 nm excimer laser was employed for ablation of human fibrocartilage. Experiments were conducted in vitro. The tissue response was investigated with respect to dosimetry (ablation rate versus radiant exposure) and thermal effect (thermographic analysis). Irradiation was performed via a 600 um fiber, with radiant exposures ranging between 20mj/mm2 and 80mj/mm2, at 20Hz. The ablation rates were found to range from 3um/pulse to 80um/pulse depending on the radiant exposure and/or the applied pressure on the delivery system. Thermographic analysis, during ablation, revealed maximum average temperatures of about 65 degree(s)C. Similar measurements performed, for the purpose of comparison, with a CW Nd:YAG and a CW CO2 laser showed higher values, of the order of 200 degree(s)C.

Excimer laser assisted re-oxidation of BaTiO3 thin films on Ni metal foils

International Nuclear Information System (INIS)

Bharadwaja, S. S. N.; Ko, S. W.; Qu, W.; Clark, T.; Rajashekhar, A.; Motyka, M.; Podraza, N.; Randall, C. A.; Trolier-McKinstry, S.

2016-01-01

Excimer laser assisted re-oxidation for reduced, crystallized BaTiO 3 thin films on Ni-foils was investigated. It was found that the BaTiO 3 can be re-oxidized at an oxygen partial pressure of ∼50 mTorr and substrate temperature of 350 °C without forming a NiO x interface layer between the film and base metal foil. The dielectric permittivity of re-oxidized films was >1000 with loss tangent values <2% at 100 Hz, 30 mV rms excitation signal. Electron Energy Loss Spectroscopy indicated that BaTiO 3 thin films can be re-oxidized to an oxygen stoichiometry close to ∼3 (e.g., stoichiometric). High resolution cross sectional transmission electron microscopy showed no evidence of NiO x formation between the BaTiO 3 and the Ni foil upon excimer laser re-oxidation. Spectroscopic ellipsometry studies on laser re-oxidized [001] C and [111] C BaTiO 3 single crystals indicate that the re-oxidation of BaTiO 3 single crystals is augmented by photo-excitation of the ozone, as well as laser pulse induced temperature and local stress gradients

Excimer laser crystallization of InGaZnO4 on SiO2 substrate

NARCIS (Netherlands)

Chen, T.; Wu, M.Y.; Ishihara, R.; Nomura, K.; Kamiya, T.; Hosono, H.; Beenakker, C.I.M.

2011-01-01

In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating

ArF Excimer Laser-induced Deposition of Ag/C Nanocomposite Thin Films in the Presence of n-Hexane

Czech Academy of Sciences Publication Activity Database

Gondal, M.A.; Fajgar, Radek; Chang, X.; Shen, K.; Xu, Q.

2014-01-01

Roč. 311, AUG 30 (2014), s. 95-100 ISSN 0169-4332 Grant - others:NNSFCH(CN) 51172044; NSFJP(CN) BK2011617; KFUPM(CN) RG 1311-1 Institutional support: RVO:67985858 Keywords : ArF excimer laser * nanocomposite * laser deposition Subject RIV: CH - Nuclear ; Quantum Chemistry Impact factor: 2.711, year: 2014

308-nm excimer laser ablation of human cartilage

Science.gov (United States)

Prodoehl, John A.; Rhodes, Anthony L.; Meller, Menachem M.; Sherk, Henry H.

1993-07-01

The XeCl excimer laser was investigated as an ablating tool for human fibrocartilage and hyaline cartilage. Quantitative measurements were made of tissue ablation rates as a function of fluence in meniscal fibrocartilage and articular hyaline cartilage. A force of 1.47 Newtons was applied to an 800 micrometers fiber with the laser delivering a range of fluences (40 to 190 mj/mm2) firing at a frequency of 5 Hz. To assess the effect of repetition rate on ablation rate, a set of measurements was made at a constant fluence of 60 mj/mm2, with the repetition rate varying from 10 to 40 Hz. Histologic and morphometric analysis was performed using light microscopy. The results of these studies revealed that the ablation rate was directly proportional to fluence over the range tested. Fibrocartilage was ablated at a rate 2.56 times faster than hyaline cartilage at the maximum fluence tested. Repetition rate had no effect on the penetration per pulse. Adjacent tissue damage was noted to be minimal (10 - 70 micrometers ).

Endobronchial Forceps-Assisted and Excimer Laser-Assisted Inferior Vena Cava Filter Removal: The Data, Where We Are, and How It Is Done.

Science.gov (United States)

Chen, James X; Montgomery, Jennifer; McLennan, Gordon; Stavropoulos, S William

2018-06-01

The recognition of inferior vena cava filter related complications has motivated increased attentiveness in clinical follow-up of patients with inferior vena cava filters and has led to development of multiple approaches for retrieving filters that are challenging or impossible to remove using conventional techniques. Endobronchial forceps and excimer lasers are tools for designed to aid in complex inferior vena cava filter removals. This article discusses endobronchial forceps-assisted and excimer laser-assisted inferior vena cava filter retrievals. Copyright © 2018 Elsevier Inc. All rights reserved.

Regrowth zones in laser annealed radiation damaged diamond

International Nuclear Information System (INIS)

Jamieson, D.N.; Prawer, S.; Dooley, S.P.; Kalish, R.; Technion-Israel Inst. of Tech., Haifa

1993-01-01

Focused laser annealing of ion implanted diamond with a 15 μm diameter laser spot produces as variety of effects that depend on the power density of the laser. Channeling Contrast Microscopy (CCM) provides a relatively straight forward, rapid, method to analyse the annealed regions of the diamond to characterize the effects. In order of increasing laser power density, effects that are observed include: regrowth of the end of range damage of the ion implantation, formation of a buried graphitic layer and complete graphitization of the surface of the diamond down to the bottom of the original damage layer. Information provided by CCM leads to an understanding the causes of these effects and provides insight into the carbon phase diagram in the neighbourhood of the graphite to diamond phase transition. Analysis of the effects of laser annealing by CCM are complicated by the swelling of the diamond lattice caused by the original ion implantation, compaction following regrowth and the effect of the analysis beam irradiation itself. 12 refs., 5 figs

Hydrophilicity and morphological investigation of polycarbonate irradiated by ArF excimer laser

Energy Technology Data Exchange (ETDEWEB)

Jaleh, B. [Bu-Ali-Sina University, Physics Department, Postal Code 65174, Hamedan (Iran, Islamic Republic of)], E-mail: jaleh@basu.ac.ir; Parvin, P. [Amir Kabir University of Technology, Physics Department, P.O. Box: 15875-4413, Tehran (Iran, Islamic Republic of); Laser Research Center, AEOI, P.O. Box: 11365-8486, Tehran (Iran, Islamic Republic of); Sheikh, N. [Nuclear Science and Technology Research Institute, Radiation Applications Research School, Tehran (Iran, Islamic Republic of); Zamanipour, Z. [Laser Research Center, AEOI, P.O. Box: 11365-8486, Tehran (Iran, Islamic Republic of); Sajad, B. [Azzahra University, Physics Department, Tehran (Iran, Islamic Republic of)

2007-12-15

Lasers are used to modify polymeric materials. In this work, a number of polycarbonate (PC) pieces were exposed by ArF excimer laser, 193 nm, at various UV doses from 10 to 100 J/cm{sup 2} with 50-500 mJ/pulse at 10 Hz pulse repetition rate. Morphology of PC has been investigated by scanning electron microscope (SEM) at three regimes pre-ablation, slow and fast ablation. SEM identifies that the conical defects are created on the polymer surface to grow opposite to the direction of laser irradiation. It increases the superficial absorptivity of the material dependent on the ArF laser induced conical microstructure geometry. The contact angle measurement was performed here, in order to determine the hydrophilicity of the irradiated polymer at various coherent doses. It is shown that the contact angle of PC samples which are exposed to the ArF laser significantly alters with UV dose below 7 J/cm{sup 2}.

Measurements of barium photocathode quantum yields at four excimer laser wavelengths

International Nuclear Information System (INIS)

Van Loy, M.D.; Young, A.T.; Leung, K.N.

1992-06-01

The electron quantum yields from barium cathodes excited by excimer laser radiation at 193, 248, 308, and 351 nm have been determined. Experiments with different cathode surface preparation techniques reveal that deposition of barium film a few microns thick on a clean copper surface under moderate vacuum conditions achieves relatively high quantum efficiencies. Quantum yields measured from surfaces prepared in this manner are 2.3 x 10 -3 at 193 nm, 7.6 x 10 - 4 at 248 nm, 6.1 x 10 -4 at 308 nm, and 4.0 x 10 -4 at 351 nm. Other preparation techniques, such as laser cleaning of a solid barium surface, produced quantum yields that were at least an order of magnitude lower than these values

Early outcome of high energy Laser (Excimer) facilitated coronary angioplasty ON hARD and complex calcified and balloOn-resistant coronary lesions: LEONARDO Study

International Nuclear Information System (INIS)

Ambrosini, Vittorio; Sorropago, Giovanni; Laurenzano, Eugenio; Golino, Luca; Casafina, Alfredo; Schiano, Vittorio; Gabrielli, Gabriele; Ettori, Federica; Chizzola, Giuliano; Bernardi, Guglielmo; Spedicato, Leonardo; Armigliato, Pietro; Spampanato, Carmine; Furegato, Martina

2015-01-01

Aim: An innovative xenon–chlorine (excimer) pulsed laser catheter (ELCA X80) has been recently used for the treatment of complex coronary lesions, as calcified stenosis, chronic total occlusions and non-compliant plaques. Such complex lesions are difficult to adequately treat with balloon angioplasty and/or intracoronary stenting. The aim of this study was to examine the acute outcome of this approach on a cohort of patients with coronary lesions. Methods and Results: Eighty patients with 100 lesions were enrolled through four centers, and excimer laser coronary angioplasty was performed on 96 lesions (96%). Safety and effectiveness data were compared between patients treated with standard laser therapy and those treated with increased laser therapy. Laser success was obtained in 90 lesions (93.7%), procedural success was reached in 88 lesions (91.7%), and clinical success in was obtained in 87 lesions (90.6%). There was no perforation, major side branch occlusion, spasm, no-reflow phenomenon, dissection nor acute vessel closure. Increased laser parameters were used successfully for 49 resistant lesions without complications. Conclusions: This study suggests that laser-facilitated coronary angioplasty is a simple, safe and effective device for the management of complex coronary lesions. Furthermore, higher laser energy levels delivered by this catheter improved the device performance without increasing complications. - Highlights: • We planned this multicenter study to examine the acute outcome of an innovative xenon–chlorine (excimer) pulsed laser catheter (ELCA X80) for treatment of complex coronary lesions. • We enrolled 80 patients with 100 lesions and performed excimer laser coronary angioplasty in 96 lesions (96%). • Laser success was obtained in 90 lesions (93.7%), procedural success was reached in 88 lesions (91.7%), and clinical success was obtained in 87 lesions (90.6%). • Increased laser parameters were used successfully for 49 resistant

Early outcome of high energy Laser (Excimer) facilitated coronary angioplasty ON hARD and complex calcified and balloOn-resistant coronary lesions: LEONARDO Study

Energy Technology Data Exchange (ETDEWEB)

Ambrosini, Vittorio; Sorropago, Giovanni; Laurenzano, Eugenio [Montevergine Clinic, Mercogliano (Italy); Golino, Luca, E-mail: lucagolino.jazz@alice.it [Montevergine Clinic, Mercogliano (Italy); Moriggia-Pelascini Hospital, Gravedona, Como (Italy); Casafina, Alfredo; Schiano, Vittorio [Montevergine Clinic, Mercogliano (Italy); Gabrielli, Gabriele [University Hospital Ospedali Riuniti, Ancona (Italy); Ettori, Federica; Chizzola, Giuliano [Spedali Civili University Hospital, Brescia (Italy); Bernardi, Guglielmo; Spedicato, Leonardo [University Hospital S. Maria Misericordia, Udine (Italy); Armigliato, Pietro [Istituto Italiano Ricerche Mediche, Verona (Italy); Spampanato, Carmine [Telethon Institute of Genetics and Medicine (TIGEM), Naples (Italy); Furegato, Martina [Istituto Italiano Ricerche Mediche, Verona (Italy)

2015-04-15

Aim: An innovative xenon–chlorine (excimer) pulsed laser catheter (ELCA X80) has been recently used for the treatment of complex coronary lesions, as calcified stenosis, chronic total occlusions and non-compliant plaques. Such complex lesions are difficult to adequately treat with balloon angioplasty and/or intracoronary stenting. The aim of this study was to examine the acute outcome of this approach on a cohort of patients with coronary lesions. Methods and Results: Eighty patients with 100 lesions were enrolled through four centers, and excimer laser coronary angioplasty was performed on 96 lesions (96%). Safety and effectiveness data were compared between patients treated with standard laser therapy and those treated with increased laser therapy. Laser success was obtained in 90 lesions (93.7%), procedural success was reached in 88 lesions (91.7%), and clinical success in was obtained in 87 lesions (90.6%). There was no perforation, major side branch occlusion, spasm, no-reflow phenomenon, dissection nor acute vessel closure. Increased laser parameters were used successfully for 49 resistant lesions without complications. Conclusions: This study suggests that laser-facilitated coronary angioplasty is a simple, safe and effective device for the management of complex coronary lesions. Furthermore, higher laser energy levels delivered by this catheter improved the device performance without increasing complications. - Highlights: • We planned this multicenter study to examine the acute outcome of an innovative xenon–chlorine (excimer) pulsed laser catheter (ELCA X80) for treatment of complex coronary lesions. • We enrolled 80 patients with 100 lesions and performed excimer laser coronary angioplasty in 96 lesions (96%). • Laser success was obtained in 90 lesions (93.7%), procedural success was reached in 88 lesions (91.7%), and clinical success was obtained in 87 lesions (90.6%). • Increased laser parameters were used successfully for 49 resistant

Pulse repetition frequency effects in a high average power x-ray preionized excimer laser

International Nuclear Information System (INIS)

Fontaine, B.; Forestier, B.; Delaporte, P.; Canarelli, P.

1989-01-01

Experimental study of waves damping in a high repetition rate excimer laser is undertaken. Excitation of laser active medium in a subsonic loop is achieved by means of a classical discharge, through transfer capacitors. The discharge stability is controlled by a wire ion plasma (w.i.p.) X-rays gun. The strong acoustic waves induced by the active medium excitation may lead to a decrease, at high PRF, of the energy per pulse. First results of the influence of a damping of induced density perturbations between two successive pulses are presented

Excimer laser correction of hyperopia, hyperopic and mixed astigmatism: past, present, and future.

Science.gov (United States)

Lukenda, Adrian; Martinović, Zeljka Karaman; Kalauz, Miro

2012-06-01

The broad acceptance of "spot scanning" or "flying spot" excimer lasers in the last decade has enabled the domination of corneal ablative laser surgery over other refractive surgical procedures for the correction of hyperopia, hyperopic and mixed astigmatism. This review outlines the most important reasons why the ablative laser correction of hyperopia, hyperopic and mixed astigmatism for many years lagged behind that of myopia. Most of today's scanning laser systems, used in the LASIK and PRK procedures, can safely and effectively perform low, moderate and high hyperopic and hyperopic astigmatic corrections. The introduction of these laser platforms has also significantly improved the long term refractive stability of hyperopic treatments. In the future, further improvements in femtosecond and nanosecond technology, eye-tracker systems, and the development of new customized algorithms, such as the ray-tracing method, could additionally increase the upper limit for the safe and predictable corneal ablative laser correction ofhyperopia, hyperopic and mixed astigmatism.

Levels of interleukin-6 in tears before and after excimer laser treatment

Directory of Open Access Journals (Sweden)

Resan Mirko

2015-01-01

Full Text Available Background/Aim. Immune response and consequent inflammatory process which originate on ocular surface after a trauma are mediated by cytokines. Photoablation of corneal stroma performed by excimer laser causes surgically induced trauma. Interleukin-6 (IL-6 is mostly known as a proinflammatory cytokine. However, it also has regenerative and anti-inflammatory effects. It is supposed that this cytokine is likely to play a significant role in the process of corneal wound healing response after photoablation of stroma carried out by laser in situ keratomileusis (LASIK or photorefractive keratectomy (PRK methods. The aim of this study was to determine and compare the levels of IL-6 in tears before and after treatment with LASIK and PRK methods. Methods. The study included 68 shortsighted eyes up to -3.0 diopter sphere, i.e. 198 samples of tears (per three samples taken from each of the eyes, divided into two groups according to the kind of excimer laser intervention performed: the group 1 - eyes treated by LASIK method (n = 31, and the group 2 - eyes treated by the PRK method (n = 37. The samples of tears were taken from each eye at the following time points: before excimer laser treatment (0 h, the control group, 1 h after the treatment (1 h and 24 h after the treatment (24 h. The patients did not use anti-inflammatory therapy 24 h after the intervention. Tear samples were collected using microsurgical sponge. Level of IL-6 in tear fluid was determined by the flow cytometry method, applying a commercial test kit which allowed cytokine detection from a small sample volume. Results. The values of IL-6 were detectable in 16% of samples before LASIK treatment and in 30% of samples before PRK treatment. One h after the treatment IL-6 was detectable in 29% of samples for the LASIK group and 43% of samples for the PRK group, and 24 h after the treatment it was detectable in 19% of samples for the LASIK group and in 57% of samples for the PRK group. When we

Levels of interleukin-6 in tears before and after excimer laser treatment.

Science.gov (United States)

Resan, Mirko; Stanojević, Ivan; Petković, Aleksandra; Pajić, Bojan; Vojvodić, Danilo

2015-04-01

Immune response and consequent inflammatory process which originate on ocular surface after a trauma are mediated by cytokines. Photoablation of corneal stroma performed by excimer laser causes surgically induced trauma. Interleukin-6 (IL-6) is mostly known as a proinflammatory cytokine. However, it also has regenerative and anti-inflammatory effects. It is supposed that this cytokine is likely to play a significant role in the process of corneal wound healing response after photoablation of stroma carried out by laser in situ keratomileusis (LASIK) or photorefractive keratectomy (PRK) methods. The aim of this study was to determine and compare the levels of IL-6 in tears before and after treatment with LASIK and PRK methods. The study included 68 shortsighted eyes up to -3.0 diopter sphere, i.e. 198 samples of tears (per three samples taken from each of the eyes), divided into two groups according to the kind of excimer laser intervention performed: the group 1--eyes treated by LASIK method (n=31), and the group 2--eyes treated by the PRK method (n=37). The samples of tears were taken from each eye at the following time points: before excimer laser treatment (0 h, the control group), 1 h after the treatment (1 h) and 24 h after the treatment (24 h). The patients did not use anti-inflammatory therapy 24 h after the intervention. Tear samples were collected using microsurgical sponge. Level of IL-6 in tear fluid was determined by the flow cytometry method, applying a commercial test kit which allowed cytokine detection from a small sample volume. Results. The values of IL-6 were detectable in 16% of samples before LASIK treatment and in 30% of samples before PRK treatment. One h after the treatment IL-6 was detectable in 29% of samples for the LASIK group and 43% of samples for the PRK group, and 24 h after the treatment it was detectable in 19% of samples for the LASIK group and in 57% of samples for the PRK group. When we analyzed the dynamics of IL76 production

Photo-triggering and secondary electron produced ionization in electric discharge ArF* excimer lasers

Science.gov (United States)

Xiong, Zhongmin; Kushner, Mark J.

2011-10-01

Electric discharge excimer lasers are sustained in multi-atmosphere attaching gas mixtures that are typically preionized to enable a reproducible, uniform glow, which maximizes optical quality and gain. This preionization is often accomplished using UV light produced by a corona discharge within the plasma cavity. To quantify the relationship between corona discharge properties and those of the laser discharge, the triggering of electron avalanche by preionizing UV light in an electric discharge-pumped ArF* excimer laser was numerically investigated using a two-dimensional model. The preionizing UV fluxes were generated by a corona-bar discharge driven by the same voltage pulse as the main discharge sustained in a multi-atmospheric Ne/Ar/Xe/F2 gas mixture. The resulting peak photo-electron density in the inter-electrode spacing is around 108 cm-3, and its distribution is biased toward the UV source. The preionization density increases with increasing dielectric constant and capacitance of the corona bar. The symmetry and uniformity of the discharge are, however, improved significantly once the main avalanche develops. In addition to bulk electron impact ionization, the ionization generated by sheath accelerated secondary electrons was found to be important in sustaining the discharge current at experimentally observed values. At peak current, the magnitude of the ionization by sheath accelerated electrons is comparable to that from bulk electron impact in the vicinity of the cathode.

Defect evolution and dopant activation in laser annealed Si and Ge

DEFF Research Database (Denmark)

Cristiano, F.; Shayesteh, M.; Duffy, R.

2016-01-01

Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly...... doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show...

Update on excimer laser photorefractive keratectomy (PRK) at Cedars-Sinai Medical Center: two-year experience

Science.gov (United States)

Maguen, Ezra I.; Salz, James J.; Warren, Cathy; Papaioannou, Thanassis; Nesburn, Anthony B.; Macy, Jonathan I.; Hofbauer, John; Grundfest, Warren S.

1993-06-01

Our two year experience with excimer laser photorefractive keratectomy for the correction of myopia on 160 eyes of 128 patients is described. All eyes were treated with a VISX Twenty- Twenty excimer laser, with the following parameters: radiant exposure 160 mJ/cm2, frequency 5 Hz, ablation zone diameter 5.0 to 5.5 mm, and stromal ablation rate 0.18 to 0.33 (mu) /pulse. A suction fixation ring was used in all cases either with nitrogen flow (79 eyes) or without nitrogen flow (81 eyes) across the cornea. Follow-up ranged from one month (152 eyes) to 24 months (12 eyes). The results are stable between 3 and 24 months with less than 0.25 D change in the mean postoperative spherical equivalents. In eyes with a follow-up of 6 to 24 months, 77% to 100% were 20/40 or better uncorrected, and 84% to 92% were corrected to within +/- 1 D of emmetropia. Further follow-up is needed to assess the long term safety and efficacy of the procedure.

IGZO TFT-based circuit with tunable threshold voltage by laser annealing

Science.gov (United States)

Huang, Xiaoming; Yu, Guang; Wu, Chenfei

2017-11-01

In this work, a high-performance inverter based on amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) has been fabricated, which consists of a driver TFT and a load TFT. The threshold voltage (Vth) of the load TFT can be tuned by applying an area-selective laser annealing. The transfer curve of the load TFT shows a parallel shift into the negative bias direction upon laser annealing. Based on x-ray photoelectron spectroscopy analyses, the negative Vth shift can be attributed to the increase of oxygen vacancy concentration within the device channel upon laser irradiation. Compared to the untreated inverter, the laser annealed inverter shows much improved switching characteristics, including a large output swing range which is close to full swing, as well as an enhanced output voltage gain. Furthermore, the dynamic performance of ring oscillator based on the laser-annealed inverter is improved.

An experimental study on laser drilling and cutting of composite materials for the aerospace industry using excimer and CO2 sources

Science.gov (United States)

dell'Erba, M.; Galantucci, L. M.; Miglietta, S.

This paper reports on the results of research which investigated the potential for the application of an excimer laser in the field of composite material drilling and cutting, by comparing this technology with that using CO2 sources. In particular, the scope of the work was to check whether the interaction between excimer lasers and composite materials, whose characteristic feature is the absence of thermal transfer, could yield better results than those obtainable with CO2 sources once heat transfer-induced difficulties had been eliminated. The materials selected for the experiments were multilayer composites having an epoxy resin matrix (65 percent in volume), with aramid fiber (Kevlar), carbon fiber and glass fiber as reinforcing materials, all of considerable interest for the aerospace industry. Optimal operational parameters were identified in relation to each source with a view to obtaining undersize holes or through cuts exhibiting severed areas of good quality. A comparison between the two types of processing carried out show that rims processed by excimer lasers are of better quality - particularly so with Kevlar - whereas the ablation rate is undoubtedly rather low compared with the CO2 technology.

Evaluation and diffusion of excimer laser treatment of myopia in the United States and in the Netherlands

NARCIS (Netherlands)

Vondeling, H.; Rosendal, H.; Banta, D.

1995-01-01

Excimer laser photorefractive keratectomy (PRK) is an experimental treatment to correct myopia (short-sightedness) that is diffusing into use without convincing evidence of safety and efficacy. It has been claimed that PRK may render conventional methods of correcting myopia, such as wearing glasses

Excimer laser-assisted anterior lamellar keratoplasty for keratoconus, corneal problems after laser in situ keratomileusis, and corneal stromal opacities.

Science.gov (United States)

Bilgihan, Kamil; Ozdek, Sengül C; Sari, Ayça; Hasanreisoğlu, Berati

2006-08-01

To evaluate excimer laser-assisted anterior lamellar keratoplasty to augment thin corneas as in keratoconus ( .05). This technique presents a different modality for the treatment of keratoconus, post-LASIK corneal problems, and other corneal stromal opacities with anterior lamellar keratoplasty. Additional studies with more patients and longer follow-up will help determine the role of this technique as a substitute for penetrating keratoplasty in these patients.

Advanced excimer laser technologies enable green semiconductor manufacturing

Science.gov (United States)

Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

2014-03-01

"Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

Improved AMOLED with aligned poly-Si thin-film transistors by laser annealing and chemical solution treatments

International Nuclear Information System (INIS)

Wu, G.M.; Chen, C.N.; Feng, W.S.; Lu, H.C.

2009-01-01

Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFT) were prepared for the active-matrix organic light-emitting displays (AMOLED). The excimer laser annealing (ELA) recrystallization technique was employed with a chemical solution treatment process to improve the TFT characteristic uniformity and the AMOLED display image quality. The characteristics of the poly-Si array thin films were influenced by XeCl ELA optic module design, TFT device channel direction, and laser irradiation overlap ratio. The ELA system module provided aligned poly-Si grain size of 0.3 μm by the homogenization lens design. The chemical solution treatment process included a dilute HF solution (DHF), ozone (O 3 ) water, and buffer oxide etching solution (BOE). The PMOS TFT showed better field effect mobility of 87.6 cm 2 /V s, and the threshold voltage was -1.35 V. The off current (I off ) was 1.25x10 -11 A, and the on/off current ratio was 6.27x10 6 . In addition, the image quality of the AMOLED display was highly improved using the 2T1C structure design without any compensation circuit.

Deposition of high Tc superconductor thin films by pulsed excimer laser ablation and their post-synthesis processing

International Nuclear Information System (INIS)

Ogale, S.B.

1992-01-01

This paper describes the use of pulsed excimer laser ablation technique for deposition of high quality superconductor thin films on different substrate materials such as Y stabilized ZrO 2 , SrTiO 3 , LiNbO 3 , Silicon and Stainless Steels, and dopant incorporation during the film depositions. Processing of deposited films using ion and laser beams for realisation of device features are presented. 28 refs., 16 figs

Very low temperature rise laser annealing of radiation-damaged solar cells in orbit

International Nuclear Information System (INIS)

Poulek, V.

1988-01-01

Solar cells of all space objects are damaged by radiation in orbit. This damage, however, can be removed by laser annealing. A new in-orbit laser regeneration system for both body- and spin-stabilized space objects is proposed. For successful annealing of solar cells damaged by 10 years' radiation dose in orbit it is necessary for the temperature rise in the incidence point of the laser beam to reach about 400 0 C. By continuous regeneration, however, between two annealing cycles the solar cells are hit by about two orders of magnitude lower radiation dose. This makes it possible to carry out the regeneration at a temperature rise well under 1 0 C! If an optimal laser regeneration system is used, such low temperature rise laser annealing of radiation-damaged solar cells is possible. A semiconductor GaAlAs diode laser with output power up to 10 mW CW was used for annealing. Some results of the very low temperature rise annealing experiment are given in this paper. (author)

Preparation of PZT thin films on YBCO electrodes by KrF excimer laser ablation technique

International Nuclear Information System (INIS)

Kurogi, H.; Yamagata, Y.; Ebihara, K.

1998-01-01

Pb(Zr X Ti 1-X )O 3 (PZT) films have excellent ferroelectric, optical, piezoelectric, and pyroelectric properties. We prepared PZT thin films by the excimer laser ablation technique. A pulsed KrF excimer laser (Lambda Physik LPX305icc, pulse duration of 25 ns, λ=248 nm, 850 mJ Max.) was used to ablate the bulk targets. We investigated the influence of bottom electrode materials on the characteristics of the PZT thin films prepared on Pt and YBCO underlayers. The X-ray diffraction (XRD) patterns showed that the PZT films prepared with a laser fluence of 2 Jcm -2 on YBCO/MgO(100) substrate at a wide temperature range of 550-680 C have a perovskite (001) structure. At the same laser fluence, the PZT films prepared on Pt/MgO(100) substrate have a perovskite (001) structure only at 650 C. The polarization-electric field (P-E) characteristics and fatigue properties of PZT thin films were measured by the Sawyer-Tower circuit. The remnant polarization and coercive field have been found to be P r =15 μC cm -2 , 30 μC cm -2 and E c =200 kV cm -1 , 100 kV cm -1 for Au/PZT/Pt/MgO and Au/PZT/YBCO/MgO correspondingly. The remnant polarization of Au/PZT/YBCO/MgO thin film was reduced to one-half after about 10 8 cycles of switching. (orig.)

Improved model for the angular dependence of excimer laser ablation rates in polymer materials

Science.gov (United States)

Pedder, J. E. A.; Holmes, A. S.; Dyer, P. E.

2009-10-01

Measurements of the angle-dependent ablation rates of polymers that have applications in microdevice fabrication are reported. A simple model based on Beer's law, including plume absorption, is shown to give good agreement with the experimental findings for polycarbonate and SU8, ablated using the 193 and 248 nm excimer lasers, respectively. The modeling forms a useful tool for designing masks needed to fabricate complex surface relief by ablation.

The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

Science.gov (United States)

Oh, Min-Suk

2018-04-01

We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

SF{sub 6} decomposition and layer formation due to excimer laser photoablation of SiO{sub 2} surface at gas-solid system

Energy Technology Data Exchange (ETDEWEB)

Sajad, Batool [Physics Department, Amirkabir University, PO Box 15875-4413, Tehran (Iran, Islamic Republic of); Parvin, Parviz [Physics Department, Amirkabir University, PO Box 15875-4413, Tehran (Iran, Islamic Republic of); Bassam, Mohamad Amin [Excimer Laser Lab, Emam Hussain University, PO Box 16575-4347, Tehrann (Iran, Islamic Republic of)

2004-12-21

In this work, the effect of an excimer laser has been studied for presenting a method for SF{sub 6} decomposition and simultaneous formation of a SiF{sub 2} layer on amorphous SiO{sub 2}. Though the excimer laser did not establish a gas phase photodissociation, we have shown that UV photoablation leads strongly to molecular decomposition in the SF{sub 6}-SiO{sub 2} system. Moreover, the dependence of the decomposition process on the exposure parameters such as the wavelength and intensity as well as the gas pressure and the focal point distance from the gas-solid interface has been investigated.

Strain of laser annealed silicon surfaces

Science.gov (United States)

Nemanich, R. J.; Haneman, D.

1982-05-01

High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10-2-10-3 in all except the polished samples.

Nd:YAG laser annealing investigation of screen-printed CIGS layer on PET: Layer annealing method for photovoltaic cell fabrication process

KAUST Repository

Alsaggaf, Ahmed

2014-06-01

Cu(In, Ga)Se2 (CIGS) ink was formulated from CIGS powder, polyvinyl butyral PVB, terpineol and polyester/polyamine co-polymeric dispersant KD-1. Thin films with different thicknesses were deposited on PET substrate using screen-printing followed by heat treatment using a Nd:YAG laser. The structure and morphology of the heated thin films were studied. The characterization of the CIGS powder, ink, and film was done using TGA, SEM, FIB, EDS, and XRD. TGA analysis shows that the CIGS ink is drying at 200 °C, which is well below the decomposition temperature of the PET substrate. It was observed by SEM that 20 pulses of 532nm and 60 mJ/cm2 Nd:YAG laser annealing causes atomic diffusion on the near surface area. Furthermore, FIB cross section images were utilized to monitor the effect of laser annealing in the depth of the layer. Laser annealing effects were compared to as deposited layer using XRD in reference to CIGS powder. The measurement shows that crystallinity of deposited CIGS is retained while EDS quantification and atomic ratio result in gradual loss of selenium as laser energy increases. The laser parameters were tuned in an effort to utilize laser annealing of screen-printed CIGS layer as a layer annealing method for solar cell fabrication process.

Optical coherence tomography following percutaneous coronary intervention with Excimer laser coronary atherectomy

Energy Technology Data Exchange (ETDEWEB)

Rawlins, John, E-mail: john.rawlins@doctors.net.uk; Talwar, Suneel; Green, Mark; O’Kane, Peter

2014-01-15

The indications for Excimer laser coronary atherectomy (ELCA) have been refined in modern interventional practice. With the expanding role for optical coherence tomography (OCT) providing high-resolution intra-coronary imaging, this article examines the appearance of the coronary lumen after ELCA. Each indication for ELCA is discussed and illustrated with a clinical case, followed by detailed analysis of the OCT imaging pre and post ELCA. The aim of the article is to provide information to interventional cardiologists to facilitate decision making during PCI, when ELCA has been used as part of the interventional strategy.

On the analysis of the activation mechanisms of sub-melt laser anneals

DEFF Research Database (Denmark)

Clarysse, T.; Bogdanowicz, J.; Goosens, J.

2008-01-01

electrically active concentration level as well as the concurrent mobility is dependent on the dopant concentration level. This implies that the activation of B through the laser anneal process in the explored temperature–time space is governed by kinetic processes (i.e. the dissolution of B–I pairs......In order to fabricate carrier profiles with a junction depth (15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt laser anneal is a promising route to explore. As laser annealed junctions seem to outperform standard anneal approaches, a detailed......) and not by the (temperature related) solid solubility....

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

Science.gov (United States)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

A 223-nm KrCl excimer laser on a He-Kr-HCl mixture

International Nuclear Information System (INIS)

Razhev, A M; Zhupikov, A A; Kargapol'tsev, E S

2004-01-01

The results of experimental studies of the parameters of a 223-nm electric-discharge KrCl excimer laser on a He-Kr-HCl mixture depending on the excitation conditions and the composition of the active gaseous medium are presented. To achieve the maximum values of the output energy and the efficiency of the KrCl laser on mixtures with buffer gaseous helium, an excitation system was used that included a circuit with an LC inverter with a high-voltage switch based on an RU-65 spark gap. An output energy of 320 mJ with an efficiency of 0.5% relative to the energy stored in the capacitors is obtained in a KrCl laser with an active medium based on the buffer He gas at a charging voltage of 30 kV. Radiation pulses with a duration of 22±1 ns and a pulse power of 15 MW are obtained. (lasers)

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

Science.gov (United States)

Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

2012-06-01

Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

Preparation of PZT thin films on YBCO electrodes by KrF excimer laser ablation technique

Energy Technology Data Exchange (ETDEWEB)

Kurogi, H; Yamagata, Y; Ebihara, K [Kumamoto Univ. (Japan). Dept. of Electr. Eng. and Comput. Sci.; Inoue, N [Kyushu Electric Power Co., Inc., Suizenji, 1-6-36, Kumamoto 862 (Japan)

1998-03-01

Pb(Zr{sub X}Ti{sub 1-X})O{sub 3} (PZT) films have excellent ferroelectric, optical, piezoelectric, and pyroelectric properties. We prepared PZT thin films by the excimer laser ablation technique. A pulsed KrF excimer laser (Lambda Physik LPX305icc, pulse duration of 25 ns, {lambda}=248 nm, 850 mJ Max.) was used to ablate the bulk targets. We investigated the influence of bottom electrode materials on the characteristics of the PZT thin films prepared on Pt and YBCO underlayers. The X-ray diffraction (XRD) patterns showed that the PZT films prepared with a laser fluence of 2 Jcm{sup -2} on YBCO/MgO(100) substrate at a wide temperature range of 550-680 C have a perovskite (001) structure. At the same laser fluence, the PZT films prepared on Pt/MgO(100) substrate have a perovskite (001) structure only at 650 C. The polarization-electric field (P-E) characteristics and fatigue properties of PZT thin films were measured by the Sawyer-Tower circuit. The remnant polarization and coercive field have been found to be P{sub r}=15 {mu}C cm{sup -2}, 30 {mu}C cm{sup -2} and E{sub c}=200 kV cm{sup -1}, 100 kV cm{sup -1} for Au/PZT/Pt/MgO and Au/PZT/YBCO/MgO correspondingly. The remnant polarization of Au/PZT/YBCO/MgO thin film was reduced to one-half after about 10{sup 8} cycles of switching. (orig.) 7 refs.

DNA damage in cultured human skin fibroblasts exposed to excimer laser radiation

Energy Technology Data Exchange (ETDEWEB)

Rimoldi, D.; Miller, A.C.; Freeman, S.E.; Samid, D. (Department of Pathology, Uniformed Services University of the Health Sciences, Bethesda, MD (USA))

1991-06-01

Ultraviolet excimer lasers are being considered for use in a variety of refractive and therapeutic procedures, the long-term biologic consequences of which are unknown. The effect of sublethal doses of 193-nm laser radiation on cellular DNA was examined in cultured human skin fibroblasts. In contrast to 248 nm, treatments with the 193-nm laser radiation below 70 J/m2 did not cause significant pyrimidine dimer formation in the skin cells. This was indicated by the lack of excision repair activities (unscheduled DNA synthesis assay), and further demonstrated by direct analysis of pyrimidine dimers in DNA from irradiated cells. However, a low level of unscheduled DNA synthesis could be detected following irradiation at 193 nm with 70 J/m2. Both the 193-nm and 248-nm radiation were able to induce chromosomal aberrations, as indicated by a micronucleus assay. A dose-dependent increase in micronuclei frequency was observed 48 and 72 h after laser irradiation. These results indicate that exposure of actively replicating human skin fibroblasts to sublethal doses of either 193- or 248-nm laser radiation can result in genotoxicity.

Safety, efficacy, predictability and stability of laser in situ keratomileusis (LASIK) with a 1000-Hz scanning spot excimer laser.

Science.gov (United States)

Khoramnia, Ramin; Salgado, Josefina P; Wuellner, Christian; Donitzky, Christof; Lohmann, Chris P; Winkler von Mohrenfels, Christoph

2012-09-01

To evaluate the safety, efficacy, predictability and stability of laser in situ keratomileusis (LASIK) with a 1000-Hz scanning spot excimer laser (Concept System 1000; WaveLight GmbH, Erlangen, Germany). LASIK was performed on twenty eyes with myopia or myopic astigmatism (mean spherical equivalent refraction: -3.97±1.72 dioptres (D); mean cylinder: -0.84±0.77 D) using a microkeratome for flap creation and the Concept System 1000 for photoablation. Patients were examined preoperatively as well as 1, 3 and 6 months after the treatment. Manifest sphere and cylinder, uncorrected (UCDVA) and best corrected (BCDVA) distance visual acuity, corneal topography and pachymetry were analysed. We observed no adverse events that might have been associated with the use of a repetition rate of 1000 Hz. All eyes maintained or had improved BCDVA at 6 months after treatment when compared to preoperative values. Six months after LASIK, UCDVA was 20/20 or better in 85% and 20/25 or better in 100% of the eyes. The spherical equivalent refraction was within ±0.50 D in 95% of the eyes at 6 months after surgery. The refraction stayed stable over time; 95% of the eyes changedLASIK with the prototype 1000-Hz excimer laser was safe, efficient and predictable. The postoperative refraction was stable over time. There were no specific clinical side-effects that might be associated with the use of such a high repetition rate. © 2011 The Authors. Acta Ophthalmologica © 2011 Acta Ophthalmologica Scandinavica Foundation.

Unscheduled DNA synthesis in human skin after in vitro ultraviolet-excimer laser ablation

International Nuclear Information System (INIS)

Green, H.A.; Margolis, R.; Boll, J.; Kochevar, I.E.; Parrish, J.A.; Oseroff, A.R.

1987-01-01

DNA damage repaired by the excision repair system and measured as unscheduled DNA synthesis (UDS) was assessed in freshly excised human skin after 193 and 248 nm ultraviolet (UV)-excimer laser ablative incisions. Laser irradiation at 248 nm induced DNA damage throughout a zone of cells surrounding the ablated and heat-damaged area. In contrast, with 193 nm irradiation UDS was not detected in cells adjacent to the ablated area, even though DNA strongly absorbs this wavelength. Our results suggest that the lack of UDS after 193 nm irradiation is due to: ''shielding'' of DNA by the cellular interstitium, membrane, and cytoplasm, DNA damage that is not repaired by excision repair, or thermal effects that either temporarily or permanently inhibit the excision repair processes

Pulsed Q-switched ruby laser annealing of Bi implanted Si crystals investigated by channeling

International Nuclear Information System (INIS)

Deutch, B.I.; Shih-Chang, T.; Shang-Hwai, L.; Zu-Yao, Z.; Jia-Zeng, H.; Ren-Zhi, D.; Te-Chang, C.; De-Xin, C.

1979-01-01

Channeling was used to investigate pulsed, Q switched ruby-laser annealed and thermally annealed Si single crystals implanted with 40-keV Bi ions to a dose of 10 15 atoms/cm 2 . After thermal annealing, residual damage decreased with increasing annealing temperature to a minimum value of 30% at 900 0 C. The Bi atoms in substitutional sites reached a maximum value (50%) after annealing at 750 0 C but decreased with increasing annealing temperature. Out diffusion of Bi atoms occurred at temperatures higher than 625 0 C. For comparison, the residual damage disappeared almost completely after pulsed-laser annealing (30 ns pulse width, Energy, E = 3J/cm 2 ). The concentration of Bi in Si exceeded its solid solubility by an order of magnitude; 95% of Bi atoms were annealed to substitutional sites. Laser pulses of different energies were used to investigate the efficiency of annealing. (author)

The effect of excimer laser keratectomy on corneal glutathione peroxidase activities and aqueous humor selenium levels in rabbits.

Science.gov (United States)

Yis, Ozgür; Bilgihan, Ayşe; Bilgihan, Kamil; Yis, Nilgün Safak; Hasanreisoğlu, Berati

2002-06-01

The formation of free oxygen radicals has been demonstrated in the corneal tissue after 193 nm laser irradiation. Cornea has several defense mechanisms that protect against oxidative damage. One of them, glutathione peroxidase (GPx), catalyzes the destruction of hydrogen peroxide and lipid hydroperoxide. Selenium is a trace element which is incorporated into the selenoenzyme GPx. In the present study, the effect of excimer laser keratectomy on corneal GPx activities and aqueous humor selenium concentrations in rabbits was evaluated. Animals were divided into five groups, and all groups were compared: controls (group 1), after epithelial scraping (group 2), transepithelial photorefractive keratectomy(PRK; group 3), superficial traditional PRK (50 microm; group 4) and deep traditional PRK (100 microm; group 5). Corneal GPx activities were measured by a modification of the coupled assay procedure. Aqueous humor selenium concentrations were determined using hydride generation atomic absorption spectrometry. Corneal GPx activities were significantly lower only in group 5 ( P<0.05), and the selenium concentration in the aqueous humor did not change in any group. Deep corneal photoablation inhibits GPx enzyme activities in the cornea. Therefore, antioxidants may be useful in reducing free radical-mediated complications after excimer laser corneal photoablation.

Periodic morphological modification developed on the surface of polyethersulfone by XeCl excimer laser photoablation

International Nuclear Information System (INIS)

Niino, H.; Nakano, M.; Nagano, S.; Yabe, A.; Miki, T.; Center for Structure Analyses, Teijin Limited, Asahigaoka, Hino, Tokyo, 191 Japan)

1989-01-01

Periodic and stable micropatterns appeared on the surface of amorphous polyethersulfone etched with an excimer laser at 308 nm in ambient air and a vacuum. The control of such radiative conditions as fluence and incident angle enables us to modify the spacing and pattern of the microstructures. A topographical investigation with scanning electron microscopy and an experiment with x-ray photoelectron spectroscopy to determine its composition is reported

308-nm excimer lamp for the treatment of alopecia areata: Clinical trial on 16 cases

Directory of Open Access Journals (Sweden)

Akiko Ohtsuki

2013-01-01

Full Text Available Background: Alopecia areata (AA is considered as a T-cell mediated autoimmune disorder. The 308-nm excimer laser is thought to be capable of inducing T-cell apoptosis in vitro, suggesting that the 308-nm excimer lamp (not laser might be effective for the treatment of AA. We examined the effectiveness of the 308-nm excimer lamp for treating AA. Materials and Methods: We treated 16 patients with single AA and multiple AA (MAA. The lesions were irradiated with a 308-nm excimer lamp at 2-week intervals. Results: Hair regrowth was observed in 14 patients. Among them, 10 patients showed more than 50% hair re-growth. Our results suggested that the 308-nm excimer lamp system is effective and safe for the treatment of single AA and MAA. Conclusion: Our results suggest that the 308-nm excimer lamp is a good therapeutic alternative without serious side effect for treating AA.

Unscheduled DNA synthesis in human skin after in vitro ultraviolet-excimer laser ablation

Energy Technology Data Exchange (ETDEWEB)

Green, H.A.; Margolis, R.; Boll, J.; Kochevar, I.E.; Parrish, J.A.; Oseroff, A.R.

1987-08-01

DNA damage repaired by the excision repair system and measured as unscheduled DNA synthesis (UDS) was assessed in freshly excised human skin after 193 and 248 nm ultraviolet (UV)-excimer laser ablative incisions. Laser irradiation at 248 nm induced DNA damage throughout a zone of cells surrounding the ablated and heat-damaged area. In contrast, with 193 nm irradiation UDS was not detected in cells adjacent to the ablated area, even though DNA strongly absorbs this wavelength. Our results suggest that the lack of UDS after 193 nm irradiation is due to: ''shielding'' of DNA by the cellular interstitium, membrane, and cytoplasm, DNA damage that is not repaired by excision repair, or thermal effects that either temporarily or permanently inhibit the excision repair processes.

ArF excimer laser modulation of TNF-alpha and gelatinase B in NIH 3T3 cells

International Nuclear Information System (INIS)

Naudy-Vives, C.; Courant, D.; Perot, J.C.; Garcia, J.; Fretier, P.; Court, L.; Dormont, D.

1995-01-01

The effects on TNF-alpha and gelatinase B activity in mammalian cells induced by 193 nm argon fluoride excimer laser have been investigated. The data show that a secretion of 92 kDa type IV collagenase and TNF-alpha were increased in cell culture supernatants. Moreover, the 193 nm laser radiation produces a decrease of cell proliferation and an increase of cell activation 8 hours after irradiation. The total protein amount increases with the delivered dose. Same, but less effects were obtained after exposure to a conventional UV lamp at 254 nm. (author)

A retrospective comparison of efficacy and safety of 680 consecutive lasik treatments for high myopia performed with two generations of flying-spot excimer lasers.

Science.gov (United States)

Gazieva, Lola; Beer, Mette Hjuler; Nielsen, Kim; Hjortdal, Jesper

2011-12-01

To compare the visual refractive outcome and complication of laser in situ keratomileusis (LASIK) carried out with a Carl Zeiss-Meditec MEL-70 Excimer laser and a MEL-80 laser for treatment of high myopia. Journal records of 680 consecutive eyes that underwent LASIK with a Schwind Supratome microkeratome and a MEL-70 Excimer laser (Group A), or a Moria M2 microkeratome and a MEL-80 Excimer laser (Group B) were reviewed. Manifest refraction, uncorrected and best spectacle-corrected visual acuity (BSCVA), corneal topography and central corneal thickness (CCT) were recorded before and 3 months after treatment. Pre- and postoperative complications, visual and refractive outcome and frequency of retreatments were registered. Mean preoperative spherical equivalent refraction was -8.52 dioptres (-5.50- -18 dioptres), and the mean attempted laser correction was -8.02 dioptres (-5.50- -11 dioptres). Three months after LASIK, the average treatment error (difference between achieved and attempted correction) was 1.20 (SD=1.19) dioptres of under correction in Group A and 0.52 (SD=1.00) dioptres in Group B. Four eyes lost more than two lines of BSCVA (0.6%). In 110 eyes (16%), a re-LASIK procedure was performed to reduce remaining myopia after the primary procedure. Laser in situ keratomileusis treatment for high myopia can effectively reduce high degrees of myopia. Under correction was observed in both treatment groups but Group B has a slightly better predictability. Significant loss of BSCVA occurs infrequently after LASIK for even considerable grades of myopia (0.6% in each group). © 2010 The Authors. Journal compilation © 2010 Acta Ophthalmol.

Laser applications in the electronics and optoelectronics industry in Japan

Science.gov (United States)

Washio, Kunihiko

1999-07-01

This paper explains current status and technological trends in laser materials processing applications in electronics and optoelectronics industry in Japan. Various laser equipment based on solid state lasers or gas lasers such as excimer lasers or CO2 lasers has been developed and applied in manufacturing electronic and optoelectronic devices to meet the strong demands for advanced device manufacturing technologies for high-performance, lightweight, low power-consumption portable digital electronic appliances, cellular mobile phones, personal computers, etc. Representative applications of solid-state lasers are, opaque and clear defects repairing of photomasks for LSIs and LCDs, trimming of thick-film chip resistors and low resistance metal resistors, laser cutting and drilling of thin films for high-pin count semiconductor CSP packages, laser patterning of thin-film amorphous silicon solar cells, and laser welding of electronic components such as hard-disk head suspensions, optical modules, miniature relays and lithium ion batteries. Compact and highly efficient diode- pumped and Q-switched solid-state lasers in second or third harmonic operation mode are now being increasingly incorporated in various laser equipment for fine material processing. Representative applications of excimer lasers are, sub-quarter micron design-rule LSI lithography and low- temperature annealing of poly-silicon TFT LCD.

Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

Science.gov (United States)

Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

2017-10-01

Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

International Nuclear Information System (INIS)

Conde, J.C.; Martín, E.; Stefanov, S.; Alpuim, P.; Chiussi, S.

2012-01-01

Highlights: ► nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. ► UV-ELA technique causes a rapid heating that provokes the H 2 desorption from the Si surface and bulk material. ► Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. ► These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO 2 . ► To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. ► The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25 ns pulse length and energy densities ranging from 50 mJ/cm 2 to 400 mJ/cm 2 have been calculated. Numerical results allowed us to estimate the dehydrogenation

Topography-guided treatment of irregular astigmatism with the wavelight excimer laser.

Science.gov (United States)

Jankov, Mirko R; Panagopoulou, Sophia I; Tsiklis, Nikolaos S; Hajitanasis, Georgos C; Aslanides, loannis M; Pallikaris, loannis G

2006-04-01

To evaluate the feasibility, safety, and predictability of correcting high irregular astigmatism in symptomatic eyes with the use of topography-guided photoablation. In a prospective, non-comparative case series, 16 consecutive symptomatic eyes of 11 patients with small hyperopic and myopic excimer laser optical zones, decentered and irregular ablation after corneal graft, and corneal scars were operated. Uncorrected visual acuity (UCVA), best spectacle-corrected visual acuity (BSCVA), manifest and cycloplegic refraction, and corneal topography, with asphericity and regularity, were analyzed. LASIK (n = 10) and photorefractive keratectomy (n = 6) were performed using the ALLEGRETTO WAVE excimer laser and T-CAT software (Topography-guided Customized Ablation Treatment; WaveLight Laser Technologie AG, Erlangen, Germany). In the LASIK group, UCVA improved from 0.81 +/- 0.68 IogMAR (20/130) (range: 0.2 to 2.0) to 0.29 +/- 0.21 logMAR (20/39) (range: 0.1 to 0.7) at 6 months. In the PRK group, mean UCVA improved from 0.89 +/- 0.87 IogMAR (20/157) (range: 0.1 to 2.0) to 0.42 +/- 0.35 logMAR (20/53) (range: 0.1 to 1.0) at 6 months. Best spectacle-corrected visual acuity did not change significantly in either group. One PRK patient lost one line of BSCVA. Refractive cylinder for the LASIK group improved from -2.53 +/- 1.71 diopters (D) (range: -0.75 to -5.75 D) to -1.28 +/- 0.99 D (range: 0 to -2.50 D) at 6 months. Refractive cylinder in the PRK group improved from -2.21 +/- 2.11 D (range: -0.25 to -5.50 D) to -1.10 +/- 0.42 D (range: -0.50 to -1.50 D). Index of surface irregularity showed a decrease from 60 +/- 12 (range: 46 to 89) to 50 +/- 9 (range: 32 to 63) at 6 months in the LASIK group whereas no significant change was noted in the PRK group. Subjective symptoms, such as glare, halos, ghost images, starbursts, and monocular diplopia, were not present postoperatively. Topography-guided LASIK and PRK resulted in a significant reduction of refractive cylinder and

A comparative study of via drilling and scribing on PEN and PET substrates for flexible electronic applications using excimer and Nd:YAG laser sources

NARCIS (Netherlands)

Mandamparambil, R.; Fledderus, H.; Brand, J. van den; Saalmink, M.; Kusters, R.; Podprocky, T.; Steenberge, G. van; Baets, J. de; Dietzel, A.H.

2009-01-01

A study on via drilling and channel scribing on PEN and PET substrates for flexible electronic application is discussed in this paper. For the experiments, both KIF excimer laser (248 nm) and frequency tripled Nd:YAG (355 nm) laser are used. Different measurement techniques like optical microscopy,

Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

International Nuclear Information System (INIS)

Park, Taesoon; Kim, Dongsik

2015-01-01

Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10 −4 Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively

Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

Energy Technology Data Exchange (ETDEWEB)

Park, Taesoon; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

2015-03-02

Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10{sup −4} Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively.

Influence of laser fluence in ArF-excimer laser assisted crystallisation of a-SiGe:H films

International Nuclear Information System (INIS)

Chiussi, S.; Lopez, E.; Serra, J.; Gonzalez, P.; Serra, C.; Leon, B.; Fabbri, F.; Fornarini, L.; Martelli, S.

2003-01-01

Polycrystalline silicon germanium (poly-SiGe) coatings are drawing increasing attention as active layers in solar cells, bolometers and various microelectronic devices. As a consequence, alternative low-cost production techniques, capable to produce such alloys with uniform and controlled grain size, become more and more attractive. Excimer laser assisted crystallisation, already assessed in thin film transistor production, has proved to be a valuable 'low-thermal budget' technique for the crystallisation of amorphous silicon. Main advantages are the high process quality and reproducibility as well as the possibility of tailoring the grain size in both, small selected regions and large areas. The feasibility of this technique for producing poly-SiGe films has been studied irradiating hydrogenated amorphous SiGe films with spatially uniform ArF-laser pulses of different fluences. Surface morphology, structure and chemical composition have been extensively characterised, demonstrating the need of using a 'step-by-step' process and a careful adjustment of both, total number of shots and laser fluence at each 'step' in order to diminish segregation effects and severe damages of the film surface and of segregation effects

Laser Annealing on the Surface Treatment of Thin Super Elastic NiTi Wire

Science.gov (United States)

Samal, S.; Heller, L.; Brajer, J.; Tyc, O.; Kadrevek, L.; Sittner, P.

2018-05-01

Here the aim of this research is annealing the surface of NiTi wire for shape memory alloy, super-elastic wire by solid state laser beam. The laser surface treatment was carried out on the NiTi wire locally with fast, selective, surface heat treatment that enables precisely tune the localized material properties without any precipitation. Both as drawn (hard) and straight annealing NiTi wire were considered for laser annealing with input power 3 W, with precisely focusing the laser beam height 14.3 % of the Z-axis with a spot size of 1 mm. However, straight annealing wire is more interest due to its low temperature shape setting behavior and used by companies for stent materials. The variable parameter such as speed of the laser scanning and tensile stress on the NiTi wire were optimized to observe the effect of laser response on the sample. Superelastic, straight annealed NiTi wires (d: 0.10 mm) were held prestrained at the end of the superelastic plateau (ε: 5 ∼6.5 %) above the superelastic region by a tensile machine ( Mitter: miniature testing rig) at room temperature (RT). Simultaneously, the hardness of the wires along the cross-section was performed by nano-indentation (NI) method. The hardness of the NiTi wire corresponds to phase changes were correlated with NI test. The laser induced NiTi wire shows better fatigue performance with improved 6500 cycles.

Properties of the ablation process for excimer laser ablation of Y1Ba2Cu3O7

International Nuclear Information System (INIS)

Neifeld, R.A.; Potenziani, E.; Sinclair, W.R.; Hill III, W.T.; Turner, B.; Pinkas, A.

1991-01-01

The process of excimer laser ablation has been studied while varying the laser fluence from 0.237 to 19.1 J/cm 2 . Ion time-of-flight, total charge, target etch depth per pulse, and etch volume per pulse have been measured. Results indicate a maximum ablation volume and minimum ionization fraction occur near 5 J/cm 2 . Several of the parameters measured vary rapidly in the 1--5 J/cm 2 range. Variation in these parameters strongly influences the properties of films grown by this technique

Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

KAUST Repository

Baumgardner, William J.

2011-09-27

We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

UV excimer laser and low temperature plasma treatments of polyamide materials

Science.gov (United States)

Yip, Yiu Wan Joanne

Polyamides have found widespread application in various industrial sectors, for example, they are used in apparel, home furnishings and similar uses. However, the requirements for high quality performance products are continually increasing and these promote a variety of surface treatments for polymer modification. UV excimer laser and low temperature plasma treatments are ideally suited for polyamide modification because they can change the physical and chemical properties of the material without affecting its bulk features. This project aimed to study the modification of polyamides by UV excimer laser irradiation and low temperature plasma treatment. The morphological changes in the resulting samples were analysed by scanning electron microscopy (SEM) and tapping mode atomic force microscopy (TM-AFM). The chemical modifications were studied by x-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS) and chemical force microscopy (CFM). Change in degree of crystallinity was examined by differential scanning calorimetry (DSC). After high-fluence laser irradiation, topographical results showed that ripples of micrometer size form on the fibre surface. By contrast, sub-micrometer size structures form on the polyamide surface when the applied laser energy is well below its ablation threshold. After high-fluence laser irradiation, chemical studies showed that the surface oxygen content of polyamide is reduced. A reverse result is obtained with low-fluence treatment. The DSC result showed no significant change in degree of crystallinity in either high-fluence or low-fluence treated samples. The same modifications in polyamide surfaces were studied after low temperature plasma treatment with oxygen, argon or tetrafluoromethane gas. The most significant result was that the surface oxygen content of polyamide increased after oxygen and argon plasma treatments. Both treatments induced many hydroxyl (-OH) and carboxylic acid (-COOH

Pulsed laser deposition of Tl-Ca-Ba-Cu-O films

International Nuclear Information System (INIS)

Ianno, N.J.; Liou, S.H.; Woollam, J.A.; Thompson, D.; Johs, B.

1990-01-01

Pulsed laser deposition is a technique commonly used to deposit high quality thin films of high temperature superconductors. This paper discusses the results obtained when this technique is applied to the deposition of Tl-Ca-Ba-Cu-O thin films using a frequency doubled Nd:YAG laser operating at 532 nm and an excimer laser operating at 248 nm. Films with onset temperatures of 125 K and zero resistance temperatures of 110 K deposited on (100) oriented MgO from a composite Tl2Ca2Ba2Cu3Ox target were obtained at both wavelengths upon appropriate post deposition annealing. Films deposited at 532 nm exhibit a rough surface, while those deposited at 248 nm are smooth and homogeneous. Upon annealing, films deposited at both wavelengths are single phase Tl2Ca2Ba2Cu3Ox. 12 refs

Laser annealing of ion implanted silicon by the aid of a Q-switched neodymium glass laser

International Nuclear Information System (INIS)

Exner, H.; Laemmel, B.; Zscherpe, G.

1984-01-01

Experimental results of laser annealing of arsenic implanted silicon are presented. Different depths of melting are obtained by varying the energy flux density of the Q-switched neodymium glass laser. The annealed samples are studied by the aid of optical microscopy, scanning electron microscopy, Rutherford backscattering spectrometry (RBS) combined with ion channeling, and of resistance measurements. Not any defect could be found by RBS and no surface structure could be determined by microscopy

Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

KAUST Repository

Baumgardner, William J.; Choi, Joshua J.; Bian, Kaifu; Fitting Kourkoutis, Lena; Smilgies, Detlef-M.; Thompson, Michael O.; Hanrath, Tobias

2011-01-01

We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC

Surface modification of Al–Si alloy by excimer laser pulse processing

Energy Technology Data Exchange (ETDEWEB)

Mahanty, S., E-mail: soumitro@iitk.ac.in; Gouthama

2016-04-15

The laser irradiation on Al-Si alloy sample is carried out by excimer laser in ambient conditions for 30 or 45 pulses. Microstructural investigation of laser treated sample is done by OM, SEM and TEM and the surface hardness is evaluated by Vickers micro indentation. Laser treated, samples suggested the dissolution of coarse primary Si and β-AlFeSi particle in α-Al matrix. The SEM/EDS study shows the enhancement of retained Si in α-Al matrix. The interface analysis of laser treated sample suggested the effected modified depth is ∼6 μm. TEM investigation shows the formation of nanocrystalline Si in size ∼2–15 nm. The cellular structures of size range ∼30–50 nm are observed after 45 pulses. The α-Al cells and Si precipitates sizes were considerably refined at higher number of pulses. The fine Si precipitates are found to be dispersed in the intercellular boundaries. An improvement in surface hardness from ∼1.6 to 1.8 is observed 30 and 45 pulse treatment, respectively. The mechanism involves for improvement in surface properties are non-equilibrium solidification, metastable phase formation and microstructural refinement. - Highlights: • Coarse Si and β phase intermetallic are melted and the constituent elements dispersed into the matrix during re-solidification. • The solid solubility of the Si at the surface enhanced after the laser treatment. • The Cellular structure with the size range ∼30–50 nm observed in α-Al after 45 laser pulses. • Si nano particles in size ∼ 2–15 nm were observed in the intercellular region. • Surface hardness increased after laser processing.

The theory of laser annealing of disordered semiconductors

International Nuclear Information System (INIS)

Noga, M.

1980-01-01

A theoretical explanation of the disorder-order phase transition concerning the ion implanted Si pulsed laser annealing is given. The phase transition is related to the Bose condensation of electron-hole plasmons. (author)

Latest result of PRK with excimer laser

Science.gov (United States)

Okamoto, Shinseiro; Okamoto, Michika

1996-05-01

We have in the last two years, performed PRK operation on over 300 human myopic eyes using ArF excimer laser with a Summit 'Omnimed' machine. For the initial 53 myopic eyes we treated, results were very good for those with correction less than minus 6 diopters. However, as previously reported, we also witnessed some regression for those eyes exceeding correction of more than minus 6 diopters. To counter such ill results of PRK we devised and suggested many new procedures for PRK with very good results. One such invention is the 'Okamoto-type' cooling machine for the cornea which reduces and stabilizes cornea temperature at 0 degrees Celsius while simultaneously bathing the cornea with special cooling fluid. After the operation, EGF, fibronectin and hexapeptide were administered using eyedrops. Soft contact lenses were used to protect the cornea, improve delivery of medication to the operated area, prevent infection and inflammation and also promote uniform and faster ephiterium regrowth. We were able to document very good post-operative results using this method, thereby giving us strong assurance that we have reached a significant milestone in PRK operation. Our report today covers post operative results of the 52 eyes we operated on and tracked for more than one year.

Effects of DC gate and drain bias stresses on the degradation of excimer laser crystallized polysilicon thin film transistors

International Nuclear Information System (INIS)

Kouvatsos, D N; Michalas, L; Voutsas, A T; Papaioannou, G J

2005-01-01

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V GS = V DS /2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated grains resulted in similar threshold voltage shift but in substantially decreased subthreshold swing and transconductance degradation. The immunity of ultra-thin active layer devices to degradation under hot carrier stress clearly suggests the implementation of ultra thin SLS ELA polysilicon films for the fabrication of TFTs exhibiting not only high performance but, especially, the high reliability needed for integrated systems on panel

Resistive switching behavior in single crystal SrTiO{sub 3} annealed by laser

Energy Technology Data Exchange (ETDEWEB)

Pan, Xinqiang [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Shuai, Yao, E-mail: yshuai@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Wu, Chuangui, E-mail: cgwu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Luo, Wenbo [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Sun, Xiangyu [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yuan, Ye; Zhou, Shengqiang [Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden (Germany); Ou, Xin [State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Wanli [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Collaboration Innovation Center of Electronic Materials and Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2016-12-15

Highlights: • Laser annealing was used to introduce oxygen vacancies into the single crystal SrTiO{sub 3}. • The effect of laser annealing with different fluence on the single crystal SrTiO{sub 3} was systematically studied. • The concentration of oxygen vacancies can be tuned by changing the fluence of laser. • Resistive switching behavior was observed in the sample with relatively high laser fluence after an electro-forming process. - Abstract: Single crystal SrTiO{sub 3} (STO) wafers were annealed by XeCl laser (λ = 308 nm) with different fluences of 0.4 J/cm{sup 2}, 0.6 J/cm{sup 2} and 0.8 J/cm{sup 2}, respectively. Ti/Pt electrodes were sputtered on the surface of STO wafer to form co-planar capacitor-like structures of Pt/Ti/STO/Ti/Pt. Current-Voltage measurements show that the leakage current is enhanced by increasing laser fluence. Resistive switching behavior is only observed in the sample annealed by laser with relatively high fluence after an electro-forming process. The X-ray photoelectron spectroscopy measurements indicate that the amount of oxygen vacancies increases with the increase of laser fluence. This work indicates resistive switching appears when enough oxygen vacancies are generated by the laser, which form conductive filaments under an external electric field.

Aqueous transforming growth factor-beta-I levels in rabbit eyes after excimer laser photoablation.

Science.gov (United States)

Bilgihan, K; Gürelik, G; Okur, H; Bilgihan, A; Hasanreisoglu, B; Imir, T

1997-01-01

Transforming growth factor beta (TGF-beta) plays an important role in anterior segment wound healing, by controlling the cell proliferation and differentiation, angiogenesis, extracellular matrix composition and mediating the immunosuppressive properties of the aqueous humor. The present study was undertaken to clarify the possible changes of aqueous humor TGF-betaI levels after excimer laser photoablation. Twenty-eight New Zealand rabbits were divided into four groups of 7 rabbits each. Group 1 served as control, the central 7 mm of corneal epithelium was removed in groups 2, 3 and 4. We performed 50-microm corneal photoablation in group 3, and 100-microm ablation in group 4. After 48 h we measured the TGF-betaI levels of the aqueous humor by ELISA method. The mean TGF-betaI value of the aqueous humor was found to be 162.94+/-13.73 pg/ml in the control group. Mechanical deepithelialization did not change the TGF-betaI levels of the aqueous humor (p > 0.05). There was no significant difference between the 50-microm photoablated group and the controls (p > 0.05), but the TGF-betaI levels of the 100-microm photoablated group were found to be significantly higher than those of both the control group and 50-microm photoablated group (p < 0.05). Many factors and cytokines may induce corneal haze and myopic regression after excimer laser photoablation; our study demonstrated that TGF-betaI is one of these factors and there is a positive correlation between the depth of corneal photoablation and aqueous TGF-betaI concentrations.

80 A/cm2 electron beams from metal targets irradiated by KrCl and XeCl excimer lasers

Science.gov (United States)

Beloglazov, A.; Martino, M.; Nassisi, V.

1996-05-01

Due to the growing demand for high-current and long-duration electron-beam devices, laser electron sources were investigated in our laboratory. Experiments on electron-beam generation and propagation from aluminium and copper targets illuminated by XeCl (308 nm) and KrCl (222 nm) excimer lasers, were carried out under plasma ignition due to laser irradiation. This plasma supplied a spontaneous accelerating electric field of about 370 kV/m without an external accelerating voltage. By applying the modified one-dimensional Poisson equation, we computed the expected current and we also estimated the plasma concentration during the accelerating process. At 40 kV of accelerating voltage, an output current pulse of about 80 A/cm2 was detected from an Al target irradiated by the shorter wavelength laser.

Excimer laser doping technique for application in an integrated CdTe imaging device

CERN Document Server

Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

1999-01-01

CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...

Comparative studies of laser annealing technique and furnace annealing by X-ray diffraction and Raman analysis of lithium manganese oxide thin films for lithium-ion batteries

International Nuclear Information System (INIS)

Pröll, J.; Weidler, P.G.; Kohler, R.; Mangang, A.; Heißler, S.; Seifert, H.J.; Pfleging, W.

2013-01-01

The structure and phase formations of radio frequency magnetron sputtered lithium manganese oxide thin films (Li 1.1 Mn 1.9 O 4 ) under ambient air were studied. The influence of laser annealing and furnace annealing, respectively, on the bulk structure and surface phases was compared by using ex-situ X-ray diffraction and Raman analysis. Laser annealing technique formed a dominant (440)-reflection, furnace annealing led to both, (111)- and (440)-reflections within a cubic symmetry (S.G. Fd3m (227)). Additionally, in-situ Raman and in-situ X-ray diffraction were applied for online detection of phase transformation temperatures. In-situ X-ray diffraction measurements clearly identified the starting temperature for the (111)- and (440)-reflections around 525 °C and 400 °C, respectively. The 2θ Bragg peak positions of the characteristic (111)- and (440)-reflections were in good agreement with those obtained through conventional furnace annealing. Laser annealing of lithium manganese oxide films provided a quick and efficient technique and delivered a dominant (440)-reflection which showed the expected electrochemical behavior of the well-known two-step de-/intercalation process of lithium-ions into the cubic spinel structure within galvanostatic testing and cyclic voltammetry. - Highlights: ► Formation of cubic spinel-like phase of Li–Mn–O thin films by rapid laser annealing ► Laser annealing at 680 °C and 100 s was demonstrated as quick crystallization method. ► 400 °C was identified as characteristic onset temperature for (440)-reflex formation

Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

DEFF Research Database (Denmark)

Hellings, G.; Rosseel, E.; Simoen, E.

2011-01-01

Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3......) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy...

FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Conde, J.C., E-mail: jconde@uvigo.es [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Martin, E. [Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Stefanov, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Alpuim, P. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Chiussi, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. Black-Right-Pointing-Pointer UV-ELA technique causes a rapid heating that provokes the H{sub 2} desorption from the Si surface and bulk material. Black-Right-Pointing-Pointer Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. Black-Right-Pointing-Pointer These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO{sub 2}. Black-Right-Pointing-Pointer To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. Black-Right-Pointing-Pointer The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25

Investigations of an excimer laser working with a four-component gaseous mixture He-Kr:Xe-HCl

Science.gov (United States)

Iwanejko, Leszek; Pokora, Ludwik J.

1991-08-01

The paper presnts working conditions of an XCI excimer laser untypical gas mixture based on KrzXe instead of pure Xe. Such a choice was influenced by the necessity of Findin9 the way to replace imported and expensive Xe by gaseous components accesible in Poland. Determining the range of changes of laser extrnal parameters which enables its proper work with the new gas mixture was the aim of same investigations results of which are presented in this paper. The laser pulse output energy and the pulse duration as a Function of supply voltage and the mixture composition are presented. The range of proper conditions for the laser working with the new mixture He-Kr:Xe--HC1 was determined. The analysis of experimental results showed that using the new mixture ensures value of energy and pulse duration comparable with the ones obtained for the mixture He-''Xe--HCl. Spectral investigations showed the lack of influence of Kr presence in the mixture on the generation spectrum of the laser. L.

Simultaneous determinations of U-Pb age and REE abundances for zircons using AfF excimer laser ablation-ICPMS

International Nuclear Information System (INIS)

Iizuka, Tsuyoshi; Hirata, Takafumi

2004-01-01

Using a laser-ablation-inductively coupled plasma mass spectrometer (LA-ICPMS), U-Pb age and rare earth element (REE) abundances have been determined simultaneously from a single 20 μm ablation pit of zircon. The laser ablation system utilizing 193 nm wave-length ArF excimer laser produces stable and reproducible signal intensities resulted in good precisions on measurements of element concentrations and isotopic ratios. Because of the higher energy density of the deep ultra-violet laser beam, ablation fractionation between Pb and U were reduced even with the prolonged ablation, and thus accuracy of Pb-U age was improved significantly. A chicane-type ion lens system was applied to a quadrupole-based ICPMS instrument. With the chicane ion lens, higher elemental sensitivity (4 times or light mass range and 3 times for mid to heavy mass range) and lower white background ( 238 U- 206 Pb ages for Nancy standard zircon (Nancy 91500), SHRIMP calibration standard zircon (SL13) and Antarctic zircon (PMA7) obtained in this study were 1064 ± 24 Ma, 569 ± 78 Ma and 2438 ± 101 Ma (2-sigma), respectively. Relative age differences from previous reports were 0.2%, 0.4% and 3.2% respectively, demonstrative of high reliability of the method. The REE abundances in zircon samples were calibrated using a NIST 610 glass standard reference material. The resulting REE abundance data for zircons (Nancy 91500 and SL13) show good agreement with those for literature values within the analytical precision of ∼20%. The matrix effect that may occur between the synthetic glass standard and zircon crystals is obviously smaller than the precision and thus negligible for this precision levels. The data presented here demonstrate clearly that the combination of ArF excimer laser an ICPMS equipped with the chicane ion lens has a potential to become a significant tool for zircon geochemistry. (author)

Putative photoacoustic damage in skin induced by pulsed ArF excimer laser

Energy Technology Data Exchange (ETDEWEB)

Watanabe, S.; Flotte, T.J.; McAuliffe, D.J.; Jacques, S.L.

1988-05-01

Argon-fluoride excimer laser ablation of guinea pig stratum corneum causes deeper tissue damage than expected for thermal or photochemical mechanisms, suggesting that photoacoustic waves have a role in tissue damage. Laser irradiation (193 nm, 14-ns pulse) at two different radiant exposures, 62 and 156 mJ/cm2 per pulse, was used to ablate the 15-microns-thick stratum corneum of the skin. Light and electron microscopy of immediate biopsies demonstrated damage to fibroblasts as deep as 88 and 220 microns, respectively, below the ablation site. These depths are far in excess of the optical penetration depth of 193-nm light (1/e depth = 1.5 micron). The damage is unlikely to be due to a photochemical mechanism because (a) the photons will not penetrate to these depths, (b) it is a long distance for toxic photoproducts to diffuse, and (c) damage is proportional to laser pulse intensity and not the total dose that accumulates in the residual tissue; therefore, reciprocity does not hold. Damage due to a thermal mechanism is not expected because there is not sufficient energy deposited in the tissue to cause significant heating at such depths. The damage is most likely due to a photoacoustic mechanism because (a) photoacoustic waves can propagate deep into tissue, (b) the depth of damage increases with increasing laser pulse intensity rather than with increasing total residual energy, and (c) the effects are immediate. These effects should be considered in the evaluation of short pulse, high peak power laser-tissue interactions.

Improving the performance of nickel-coated fluorine-doped tin oxide thin films by magnetic-field-assisted laser annealing

Energy Technology Data Exchange (ETDEWEB)

Li, Bao-jia, E-mail: li_bjia@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Huang, Li-jing [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Kong, Xia; Cai, Yun-long; Zhang, Jie-lu [Jiangsu Tailong Reduction Box Co. Ltd., Taixing 225400 (China)

2015-10-01

Highlights: • Ni/FTO films were prepared by sputtering Ni layers on commercial FTO glass. • The as-prepared Ni/FTO films underwent magnetic-field-assisted laser annealing. • Magnetic field and laser fluence were crucial for improving quality of the films. • All Ni/FTO films displayed enhanced compactness after magnetic laser annealing. • Magnetic laser annealing using a fluence of 0.9 J/cm{sup 2} led to the best film quality. - Abstract: Nickel-coated fluorine-doped tin oxide (Ni/FTO) thin films were prepared by sputtering Ni layers on commercial FTO glass. The as-prepared Ni/FTO films underwent nanosecond pulsed laser annealing in an external magnetic field (0.4 T). The effects of the presence of magnetic field and laser fluence on surface morphology, crystal structure and photoelectric properties of the films were investigated. All the films displayed enhanced compactness after magnetic-field-assisted laser annealing. It was notable that both crystallinity and grain size of the films gradually increased with increasing laser fluence from 0.6 to 0.9 J/cm{sup 2}, and then decreased slightly with an increase in laser fluence to 1.1 J/cm{sup 2}. As a result, the film obtained by magnetic-field-assisted laser annealing using a fluence of 0.9 J/cm{sup 2} had the best overall photoelectric property with an average transmittance of 81.2%, a sheet resistance of 5.5 Ω/sq and a figure of merit of 2.27 × 10{sup −2} Ω{sup −1}, outperforming that of the film obtained by pure laser annealing using the same fluence.

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

DEFF Research Database (Denmark)

Shayesteh, Maryam; O' Connell, Dan; Gity, Farzan

2014-01-01

In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier...... implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance....

[Excimer laser therapy of alopecia areata--side-by-side evaluation of a representative area].

Science.gov (United States)

Raulin, Christian; Gündogan, Cüneyt; Greve, Bärbel; Gebert, Susanne

2005-07-01

We report for the first time on hair regrowth in alopecia areata of the scalp achieved with the 308-nm xenon-chloride excimer laser in a prospective side-by-side trial. The alopecia areata had shown progression over a period of three years, and various treatments had not been effective. Out of a number of affected areas, one representative lesion was chosen; one half of it was treated, the other half remained untreated. After 27 sessions (200 - 4000 mJ/cm2, cumulative dose 52.6 J/cm2) over 3 months, only the treated area showed hair growth; which suggests that this was most probably not a spontaneous remission.

One-kilohertz eye tracker and active intraoperative torsion detection in the NIDEK CXIII and Quest excimer lasers.

Science.gov (United States)

Waring, George O

2009-10-01

To describe recent technological additions to the NIDEK CXIII and Quest excimer lasers. A summary article with data from previous published studies outlining the benefits of newer technology. The addition of a 1-kHz infrared eye tracker decreased the spread of laser spot placement from a mean of 228.79 microm without a tracker to 38.47 microm with the eye tracker. The addition of real-time torsion error correction produced a statistically significantly lower cylinder dispersion, mean manifest refractive cylinder, and error of angle postoperatively in eyes that underwent LASIK. The incorporation of an ultrahigh speed eye tracker and active cyclotorsion correction surpasses the minimal technology criteria required for accurate wavefront-based ablations. Copyright 2009, SLACK Incorporated.

Laser annealing of ion implanted silicon

International Nuclear Information System (INIS)

White, C.W.; Appleton, B.R.; Wilson, S.R.

1980-01-01

Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes at the interface occurring during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k') and the maximum substitutional solubilities (C/sub s//sup max/) are far greater than equilibrium values. Both K' and C/sub s//sup max/ are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed. 5 figures, 2 tables

Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing.

Science.gov (United States)

Jiang, Jing; Jacobs, Alan G; Wenning, Brandon; Liedel, Clemens; Thompson, Michael O; Ober, Christopher K

2017-09-20

Laser spike annealing was applied to PS-b-PDMS diblock copolymers to induce short-time (millisecond time scale), high-temperature (300 to 700 °C) microphase segregation and directed self-assembly of sub-10 nm features. Conditions were identified that enabled uniform microphase separation in the time frame of tens of milliseconds. Microphase ordering improved with increased temperature and annealing time, whereas phase separation contrast was lost for very short annealing times at high temperature. PMMA brush underlayers aided ordering under otherwise identical laser annealing conditions. Good long-range order for sub-10 nm cylinder morphology was achieved using graphoepitaxy coupled with a 20 ms dwell laser spike anneal above 440 °C.

Impact of Angioscopic Evaluation for Femoropopliteal In-Stent Restenosis Before and After Excimer Laser Atherectomy.

Science.gov (United States)

Idemoto, Akiko; Okamoto, Naotaka; Tanaka, Akihiro; Mori, Naoki; Nakamura, Daisuke; Yano, Masamichi; Makino, Nobuhiko; Egami, Yasuyuki; Shutta, Ryu; Tanouchi, Jun; Nishino, Masami

2017-07-01

In-stent restenosis (ISR) is a prevalent problem following stenting of femoropopliteal lesions. A potential novel treatment modality for ISR including excimer laser atherectomy (ELA) has become available. We performed ELA for in-stent chronic total occlusion (CTO) of femoropopliteal lesions and evaluated lesion morphology before and after ELA by angioscopy in 2 patients. The angioscopic findings clearly showed removal of in-stent thrombi after ELA. Thus, ELA may be effective for in-stent CTO of femoropopliteal lesions. This is the first report describing the direct visualization of ELA effect for vaporization of thrombi in femoropopliteal in-stent lesions by angioscopy.

Outcomes of excimer laser enhancements in pseudophakic patients with multifocal intraocular lens

Directory of Open Access Journals (Sweden)

Schallhorn SC

2016-04-01

Full Text Available Steven C Schallhorn,1–3 Jan A Venter,2 David Teenan,2 Julie M Schallhorn,3 Keith A Hettinger,2 Stephen J Hannan,2 Martina Pelouskova2 1Department of Ophthalmology, University of California, San Francisco, CA, USA; 2Optical Express, Glasgow, UK; 3Department of Ophthalmology, University of Southern California, Los Angeles, CA, USA Purpose: The aim of this study was to assess visual and refractive outcomes of laser vision correction (LVC to correct residual refraction after multifocal intraocular lens (IOL implantation. Patients and methods: In this retrospective study, 782 eyes that underwent LVC to correct unintended ametropia after multifocal IOL implantation were evaluated. Of all multifocal lenses implanted during primary procedure, 98.7% were refractive and 1.3% had a diffractive design. All eyes were treated with VISX STAR S4 IR excimer laser using a convectional ablation profile. Refractive outcomes, visual acuities, patient satisfaction, and quality of life were evaluated at the last available visit. Results: The mean time between enhancement and last visit was 6.3±4.4 months. Manifest spherical equivalent changed from -0.02±0.83 D (-3.38 D to +2.25 D pre-enhancement to 0.00±0.34 D (-1.38 D to +1.25 D post-enhancement. At the last follow-up, the percentage of eyes within 0.50 D and 1.00 D of emmetropia was 90.4% and 99.5%, respectively. Of all eyes, 74.9% achieved monocular uncorrected distance visual acuity 20/20 or better. The mean corrected distance visual acuity remained the same before (-0.04±0.06 logMAR [logarithm of the minimum angle of resolution] and after LVC procedure (-0.04±0.07 logMAR; P=0.70. There was a slight improvement in visual phenomena (starburst, halo, glare, ghosting/double vision following the enhancement. No sight-threatening complications related to LVC occurred in this study. Conclusion: LVC in pseudophakic patients with multifocal IOL was safe, effective, and predictable in a large cohort of

Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

CERN Document Server

Gentile, C A; Hartfield, J W; Hawryluk, R J; Hegeler, F; Heitzenroeder, P J; Jun, C H; Ku, L P; Lamarche, P H; Myers, M C; Parker, J J; Parsells, R F; Payen, M; Raftopoulos, S; Sethian, J D

2002-01-01

The Princeton Plasma Physics Laboratory (PPPL), in collaboration with the Naval Research Laboratory (NRL), is currently investigating various novel materials (single crystal silicon, , and ) for use as electron-beam transmission windows in a KrF excimer laser system. The primary function of the window is to isolate the active medium (excimer gas) from the excitation mechanism (field-emission diodes). Chosen window geometry must accommodate electron energy transfer greater than 80% (750 keV), while maintaining structural integrity during mechanical load (1.3 to 2.0 atm base pressure differential, approximate 0.5 atm cyclic pressure amplitude, 5 Hz repetition rate) and thermal load across the entire hibachi area (approximate 0.9 W centre dot cm superscript ''-2''). In addition, the window must be chemically resistant to attack by fluorine free-radicals (hydrofluoric acid, secondary). In accordance with these structural, functional, and operational parameters, a 22.4 mm square silicon prototype window, coated w...

Post-annealing effects on pulsed laser deposition-grown GaN thin films

International Nuclear Information System (INIS)

Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

2015-01-01

In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H

International Nuclear Information System (INIS)

Poliani, E.; Somaschini, C.; Sanguinetti, S.; Grilli, E.; Guzzi, M.; Le Donne, A.; Binetti, S.; Pizzini, S.; Chrastina, D.; Isella, G.

2009-01-01

We report the effect of laser annealing on the structural and electronic properties of nc-Si/a-Si:H samples grown close to the amorphous to nanocrystalline transition. The nc-Si/a-Si:H thin films were produced by low-energy plasma-enhanced chemical vapor deposition through a gas discharge containing SiH 4 . The samples were subjected to different laser fluencies and were characterized for changes in their structural and electronic properties via Raman spectroscopy and photoluminescence measurements. The laser annealing effects are twofold: i) the nanocrystalline phase grows, during the laser treatment, respect to the amorphous phase; ii) the photoluminescence spectra show the suppression, after laser annealing, of the frequencies above the crystalline Si band-gap.

Activation of visible up-conversion luminescence in transparent and conducting ZnO:Er:Yb films by laser annealing

International Nuclear Information System (INIS)

Lluscà, M.; López-Vidrier, J.; Lauzurica, S.; Sánchez-Aniorte, M.I.; Antony, A.; Molpeceres, C.; Hernández, S.; Garrido, B.; Bertomeu, J.

2015-01-01

Transparent and conducting ZnO:Er:Yb thin films with visible up-conversion (660-nm emission under 980-nm excitation) were fabricated by RF magnetron sputtering. The as-deposited films were found to be transparent and conducting and the activation of the Er ions in these films to produce up-conversion luminescence was achieved by different post-deposition annealing treatments in air, vacuum or by laser annealing using a Nd:YVO 4 laser. The structural, electrical and optical properties and the up-conversion efficiency of these films were found to be strongly influenced by the annealing method, and a detailed study is reported in this paper. It has been demonstrated that, although the air annealing was the most efficient in terms of up-conversion, laser annealing was the only method capable of activating Er ions while preserving the electrical conductivity of the doped films. It has been shown that a minimum energy was needed in laser annealing to optically activate the rare earth ions in the ZnO host material to produce up-conversion. Up-converting and transparent conducting ZnO:Er:Yb films with an electrical resistivity of 5×10 −2 Ω cm and transparency ~80% in the visible wavelength range has been achieved by laser annealing. - Highlights: • Transparent and conducting ZnO:Er:Yb films were grown via magnetron sputtering. • Post-annealing ZnO:Er:Yb is needed to optically activate Er ions. • Visible up-conversion emission at 660 nm is observed under 980 nm excitation. • A transparent and conducting up-converter is achieved by laser annealing

Analysis of excimer laser radiant exposure effect toward corneal ablation volume at LASIK procedure

Science.gov (United States)

Adiati, Rima Fitria; Rini Rizki, Artha Bona; Kusumawardhani, Apriani; Setijono, Heru; Rahmadiansah, Andi

2016-11-01

LASIK (Laser Asissted In Situ Interlamelar Keratomilieusis) is a technique for correcting refractive disorders of the eye such as myopia and astigmatism using an excimer laser. This procedure use photoablation technique to decompose corneal tissues. Although preferred due to its efficiency, permanency, and accuracy, the inappropriate amount radiant exposure often cause side effects like under-over correction, irregular astigmatism and problems on surrounding tissues. In this study, the radiant exposure effect toward corneal ablation volume has been modelled through several processes. Data collecting results is laser data specifications with 193 nm wavelength, beam diameter of 0.065 - 0.65 cm, and fluence of 160 mJ/cm2. For the medical data, the myopia-astigmatism value, cornea size, corneal ablation thickness, and flap data are taken. The first modelling step is determining the laser diameter between 0.065 - 0.65 cm with 0.45 cm increment. The energy, power, and intensity of laser determined from laser beam area. Number of pulse and total energy is calculated before the radiant exposure of laser is obtained. Next is to determine the parameters influence the ablation volume. Regression method used to create the equation, and then the spot size is substituted to the model. The validation used is statistic correlation method to both experimental data and theory. By the model created, it is expected that any potential complications can be prevented during LASIK procedures. The recommendations can give the users clearer picture to determine the appropriate amount of radiant exposure with the corneal ablation volume necessary.

Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

Science.gov (United States)

Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.

1988-09-01

The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Lee, Daeho; Pan, Heng; Kim, Eunpa; Grigoropoulos, Costas P. [University of California, Department of Mechanical Engineering, Berkeley, CA (United States); Ko, Seung Hwan [Korea Advanced Institute of Science and Technology (KAIST), Department of Mechanical Engineering, Daejeon (Korea, Republic of); Park, Hee K. [AppliFlex LLC, Sunnyvale, CA (United States)

2012-04-15

A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75 x 10{sup -2} {omega} cm, exhibiting a factor of 10{sup 5} higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors. (orig.)

Structuring of poly ether ether ketone by ArF excimer laser radiation in different atmospheres

International Nuclear Information System (INIS)

Feng, Y.; Gottmann, J.; Kreutz, E.W.

2003-01-01

Structuring of poly ether ether ketone (PEEK) by 193 nm ArF excimer laser radiation has been investigated. Experiments were carried out in different atmospheres (air, vacuum, Ar, O 2 ) in order to study its influence on the quality of the structures and the formation of the debris. Repetition rate makes little effect on the ablation rate and roughness of the structure in presence of any kind of atmosphere, indicating for the structuring of PEEK by ArF laser radiation a large window of processing. The roughness at the bottom of the structures and the morphology of the side walls are strongly affected by the properties of the atmosphere. The smallest roughness is achieved at 0.6 J/cm 2 for all kinds of processing gases. Debris around the structures can be diminished by structuring in vacuum. Plasma expansion speed has been measured by using high speed photography

Gasochromic performance of WO3-nanorod thin films fabricated with an ArF excimer laser

International Nuclear Information System (INIS)

Yaacob, M. H.; Ou, J. Z.; Wlodarski, W.; Kim, C. S.; Lee, J. Y.; Kim, Y. H.; Oh, C. M.; Dhakal, K. P.; Kim, J. Y.; Kang, J. H.

2012-01-01

Thin films with tungsten trioxide (WO 3 ) nanorods were fabricated by using an ArF pulsed laser deposition system. Because the ArF excimer laser operates at a very short wavelength of 193 nm, short enough to expect strong absorption of the photons in the semiconductor oxide targets, and because the clusters incoming to the substrates have high momentum, we could build thin films with good surface morphology. Highly homogeneous arrays of nanorods with sizes mostly in the range of 30 - 40 nm were observed. The absorbance response towards hydrogen (H 2 ) gas was investigated for a WO 3 film coated with 25-A-thick palladium (Pd). The Pd/WO 3 -nanorod thin films exhibited excellent gasochromic response when measured in the visible-NIR range (400 - 1000 nm). As low as 0.06% H 2 concentration was clearly sensed. A significant reversible absorbance change and fast recovery ( 2 at different concentrations.

Preparation of PZT/YBCO/YAlO heterostructure thin films by KrF excimer laser ablation

International Nuclear Information System (INIS)

Ebihara, Kenji; Kurogi, Hiromitsu; Yamagata, Yukihiko; Ikegami, Tomoaki; Grishin, A.M.

1998-01-01

The perovskite oxide YBa 2 Cu 3 O 7-x (YBCO) and Pb(Zr x Ti 1-x )O 3 (PZT) thin films have been deposited for superconducting-ferroelectric devices. KrF excimer laser ablation technique was used at the deposition conditions of 200--600 mTorr O 2 , 2-3J/cm 2 and 5--10 Hz operation frequency. Heterostructures of PZT-YBCO-YAlO 3 :Nd show the zero resistivity critical temperature of 82 K and excellent ferroelectric properties of remnant polarization 32 microC/cm 2 , coercive force of 80 kV/cm and dielectric constant 800. Cycling fatigue characteristics and leakage current are also discussed

Reduction in L10 phase transition temperature of PLD grown FePt thin by pre-annealing pulse laser exposure

International Nuclear Information System (INIS)

Wang, Y.; Rawat, R.S.; Bisht, A.

2013-01-01

A pre-annealing atmospheric pulsed laser exposure was applied to decrease the phase transition (from chemically disordered A1 phase to chemically ordered L1 0 phase) temperature of FePt nano-particles on a Si (100) substrate. Different pre-annealing laser energy densities of 0.024 and 0.079 J/cm2 were utilized to expose the pulsed laser deposition (PLD) FePt thin film samples under atmospheric conditions. Subsequently, FePt thin film samples were annealed at different temperatures of 300 and 400 ºC to observe the influence of laser exposure on the phase transition temperature. The phase transition temperature was decreased from conventional 600 ºC to 400 ºC by one shot pre-annealing atmospheric pulsed laser exposure. (author)

Laser Physics and Physics with Lasers - Recent Advances

International Nuclear Information System (INIS)

Marowsky, G.

2008-01-01

This contribution reviews the development as well as recent technological advances in the field of optics with lasers and laser-related applications. Topics ranging from 'attoscience' to 'zero-modes' shall be dealt with in this presentation. Further reading in the following references is suggested: Springer Handbook of Lasers and Optics (F. Trager, ed.), 2007, ISBN-13: 978-0-387-95579-7; Chapter 11.7, Part C: Ultraviolet Lasers: Excimers, Fluorine (F2), Nitrogen (N2), pp. 764-776; Excimer Laser Technology (D. Basting, G. Marowsky, eds.) 2005, Springer, ISBN-13 978-3-540-20056-7

Study on the surface chemical properties of UV excimer laser irradiated polyamide by XPS, ToF-SIMS and CFM

International Nuclear Information System (INIS)

Yip, Joanne; Chan, Kwong; Sin, Kwan Moon; Lau, Kai Shui

2002-01-01

Polyamide (nylon 6) was irradiated by a pulsed ultraviolet (UV) excimer laser with a fluence below its ablation threshold. Chemical modifications on laser treated nylon were studied by X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (Tof-SIMS) and chemical force microscopy (CFM). XPS study provides information about changes in chemical composition and the chemical-state of atom types on the fiber surface. The high sensitivity of ToF-SIMS to the topmost layers was used to detect crosslinking after the laser treatment. Gold-coated AFM tips modified with -COOH terminated self-assembled alkanethiol monolayers (SAMs) were used to measure adhesion forces on the untreated and laser treated samples. XPS results revealed that the irradiated samples have higher oxygen content than prior to laser irradiation. Tof-SIMS analysis illustrated that carbonyl groups in nylon 6 decrease significantly but hydroxyl groups increase after low-fluence laser irradiation. The adhesion force measurements by CFM showed spatial distribution of hydroxyl groups on nylon 6 after the laser treatment

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

KAUST Repository

Al-Jabr, Ahmad

2016-07-28

We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (Ith), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (ηi), from 63% to 68%, and increased internal losses αi, from 14.3 to 18.6  cm−1. Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs.

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Science.gov (United States)

Al-Jabr, Ahmad A.; Mishra, Pawan; Majid, Mohammed A.; Ng, Tien Khee; Ooi, Boon S.

2016-07-01

We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ˜30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (Ith), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (ηi), from 63% to 68%, and increased internal losses αi, from 14.3 to 18.6 cm-1. Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs.

Pulsed Er:YAG- and 308 nm UV-excimer laser: an in vitro and in vivo study of skin-ablative effects

Energy Technology Data Exchange (ETDEWEB)

Kaufmann, R.; Hibst, R.

1989-01-01

Using a pulsed XeCl excimer laser (308 nm) and a pulsed Er:YAG laser (2,940 nm), we investigated skin ablation as a function of pulse number, radiant energy, and repetition rate. In vitro analysis of lesions performed in freshly excised human skin were consistent with in vivo results obtained from experiments on pig skin. Pulsed 308 nm laser radiation caused considerable nonspecific thermal tissue injury followed by an inflammatory reaction and impaired healing of lesions in vivo. These findings were especially pronounced with higher repetition rates, which would be required for efficient destruction of larger lesions. On the other hand, the 2.94 microns Er:YAG laser radiation produced clean and precise lesions with only minimal adjacent injury. In vivo skin ablation caused intraoperative bleeding with deeper penetration. The Er:YAG laser offers a promising surgical tool for careful removal of superficial epidermal lesions, if higher repetition rates, and an appropriate laser beam delivery system are available for clinical use.

Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

Energy Technology Data Exchange (ETDEWEB)

Conde, J.C., E-mail: jconde@uvigo.e [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas y Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Gontad, F.; Chiussi, S. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Fornarini, L. [Enea-Frascati, Via Enrico Fermi 45, I-00044 Frascati (Roma) (Italy); Leon, B. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain)

2010-02-26

A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

International Nuclear Information System (INIS)

Conde, J.C.; Martin, E.; Gontad, F.; Chiussi, S.; Fornarini, L.; Leon, B.

2010-01-01

A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

Topography-guided hyperopic and hyperopic astigmatism femtosecond laser-assisted LASIK: long-term experience with the 400 Hz eye-Q excimer platform

Directory of Open Access Journals (Sweden)

Kanellopoulos AJ

2012-06-01

Full Text Available Anastasios John KanellopoulosDepartment of Ophthalmology, New York University Medical School, New York, NY, and LaserVision.gr Eye Institute, Athens, GreeceBackground: The purpose of this study was to evaluate the safety and efficacy of topography-guided ablation using the WaveLight 400 Hz excimer laser in laser-assisted in situ keratomileusis (LASIK for hyperopia and/or hyperopic astigmatism.Methods: We prospectively evaluated 208 consecutive LASIK cases for hyperopia with or without astigmatism using the topography-guided platform of the 400 Hz Eye-Q excimer system. The mean preoperative sphere value was +3.04 ± 1.75 (range 0.75–7.25 diopters (D and the mean cylinder value was –1.24 ± 1.41 (–4.75–0 D. Flaps were created either with Intralase FS60 (AMO, Irvine, CA or FS200 (Alcon, Fort Worth, TX femtosecond lasers. Parameters evaluated included age, preoperative and postoperative refractive error, uncorrected distance visual acuity, corrected distance visual acuity, flap diameter and thickness, topographic changes, higher order aberration changes, and low contrast sensitivity. These measurements were repeated postoperatively at regular intervals for at least 24 months.Results: Two hundred and two eyes were available for follow-up at 24 months. Uncorrected distance visual acuity improved from 5.5/10 to 9.2/10. At 24 (8–37 months, 75.5% of the eyes were in the ±0.50 D range and 94.4% were in the ±1.00 D range of the refractive goal. Postoperatively, the mean sphere value was –0.39 ± 0.3 and the cylinder value was –0.35 ± 0.25. Topographic evidence showed that ablation was made in the visual axis and not in the center of the cornea, thus correlating with the angle kappa. No significant complications were encountered in this small group of patients.Conclusion: Hyperopic LASIK utilizing the topography-guided platform of the 400 Hz Eye-Q Allegretto excimer and a femtosecond laser flap appears to be safe and effective for

Laser microstructuring and annealing processes for lithium manganese oxide cathodes

International Nuclear Information System (INIS)

Proell, J.; Kohler, R.; Torge, M.; Ulrich, S.; Ziebert, C.; Bruns, M.; Seifert, H.J.; Pfleging, W.

2011-01-01

It is expected that cathodes for lithium-ion batteries (LIB) composed out of nano-composite materials lead to an increase in power density of the LIB due to large electrochemically active surface areas but cathodes made of lithium manganese oxides (Li-Mn-O) suffer from structural instabilities due to their sensitivity to the average manganese oxidation state. Therefore, thin films in the Li-Mn-O system were synthesized by non-reactive radiofrequency magnetron sputtering of a spinel lithium manganese oxide target. For the enhancement of the power density and cycle stability, large area direct laser patterning using UV-laser radiation with a wavelength of 248 nm was performed. Subsequent laser annealing processes were investigated in a second step in order to set up a spinel-like phase using 940 nm laser radiation at a temperature of 680 deg. C. The interaction processes between UV-laser radiation and the material was investigated using laser ablation inductively coupled plasma mass spectroscopy. The changes in phase, structure and grain shape of the thin films due to the annealing process were recorded using Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The structured cathodes were cycled using standard electrolyte and a metallic lithium anode. Different surface structures were investigated and a significant increase in cycling stability was found. Surface chemistry of an as-deposited as well as an electrochemically cycled thin film was investigated via X-ray photoelectron spectroscopy.

Properties of the ablation process for excimer laser ablation of Y sub 1 Ba sub 2 Cu sub 3 O sub 7

Energy Technology Data Exchange (ETDEWEB)

Neifeld, R.A.; Potenziani, E. (United States Army, Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey 07703-5000 (US)); Sinclair, W.R. (Martin Goffman Associates, 3 Dellview Drive, Edison, New Jersey 08820-2545 (US)); Hill III, W.T.; Turner, B.; Pinkas, A. (Institute for Physical Science and Technology, University of Maryland, College Park, Maryland 20742 (US))

1991-01-15

The process of excimer laser ablation has been studied while varying the laser fluence from 0.237 to 19.1 J/cm{sup 2}. Ion time-of-flight, total charge, target etch depth per pulse, and etch volume per pulse have been measured. Results indicate a maximum ablation volume and minimum ionization fraction occur near 5 J/cm{sup 2}. Several of the parameters measured vary rapidly in the 1--5 J/cm{sup 2} range. Variation in these parameters strongly influences the properties of films grown by this technique.

Annealing of SnO2 thin films by ultra-short laser pulses

NARCIS (Netherlands)

Scorticati, D.; Illiberi, A.; Bor, T.; Eijt, S.W.H.; Schut, H.; Römer, G.R.B.E.; Lange, D.F. de; Huis In't Veld, A.J.

2014-01-01

Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO2 thin films by means of thermal processing. Industrial grade SnO2 films exhibited improved optical properties after picosecond laser irradiation, at the expense of a slightly increased sheet resistance

Structural defects in laser- and electron-beam annealed silicon

International Nuclear Information System (INIS)

Narayan, J.

1979-01-01

Laser and electron beam pulses provide almost an ideal source of heat by which thin layers of semiconductors can be rapidly melted and solidified with heating and cooling rates exceeding 10 80 C/sec. Microstructural modifications obtained as a function of laser parameters are examined and it is shown that both laser and electron beam pulses can be used to remove displacement damage, dislocations, dislocation loops and precipitates. Annealing of defects underneath the oxide layers in silicon is possible within a narrow energy window. The formation of cellular structure provides a rather clear evidence of melting which leads to segregation and supercooling, and subsequent cell formation

Excimers of organic molecules

Science.gov (United States)

Barashkov, Nikolai N.; Sakhno, T. V.; Nurmukhametov, Ravil'N.; Khakhel', O. A.

1993-06-01

Studies devoted to excimers in organic systems are surveyed. Processes leading to the excitation of the excimer luminescence are examined. Examples of the excimer-like glow of dimers are described. The relation between the structure of the complexes and their fluorescence properties is demonstrated. The bibliography includes 218 references.

Study on Laser Induced Plasma Produced in Liquid

International Nuclear Information System (INIS)

Tsuda, N.; Yamada, J.

2003-01-01

When an intense laser light is focused in liquid, a hot plasma is produced at the focal spot. The breakdown threshold and the transmittance of sodium choroids solution are observed using excimer laser or YAG laser. The breakdown threshold decreases with increasing NaCl concentration. Threshold intensity of plasma produced by YAG laser is lower than excimer laser. The behavior of plasma development is observed by a streak camera. The plasma produced by a YAG laser develops only backward. However, the plasma produced by excimer laser develops not only backward but also forward same as the plasma development in high-pressure gases

Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing.

Science.gov (United States)

Bell, Robert T; Jacobs, Alan G; Sorg, Victoria C; Jung, Byungki; Hill, Megan O; Treml, Benjamin E; Thompson, Michael O

2016-09-12

A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing, exploiting the temperature gradients created by a lateral gradient laser spike anneal (lgLSA), is presented. Laser scans generate spatial thermal gradients of up to 5 °C/μm with peak temperatures ranging from ambient to in excess of 1400 °C, limited only by laser power and materials thermal limits. Discrete spatial property measurements across the temperature gradient are then equivalent to independent measurements after varying temperature anneals. Accurate temperature calibrations, essential to quantitative analysis, are critical and methods for both peak temperature and spatial/temporal temperature profile characterization are presented. These include absolute temperature calibrations based on melting and thermal decomposition, and time-resolved profiles measured using platinum thermistors. A variety of spatially resolved measurement probes, ranging from point-like continuous profiling to large area sampling, are discussed. Examples from annealing of III-V semiconductors, CdSe quantum dots, low-κ dielectrics, and block copolymers are included to demonstrate the flexibility, high throughput, and precision of this technique.

Laser annealed in-situ P-doped Ge for on-chip laser source applications (Conference Presentation)

Science.gov (United States)

Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clement; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris

2016-05-01

Realization of a monolithically integrated on-chip laser source remains the holy-grail of Silicon Photonics. Germanium (Ge) is a promising semiconductor for lasing applications when highly doped with Phosphorous (P) and or alloyed with Sn [1, 2]. P doping makes Ge a pseudo-direct band gap material and the emitted wavelengths are compatible with fiber-optic communication applications. However, in-situ P doping with Ge2H6 precursor allows a maximum active P concentration of 6×1019 cm-3 [3]. Even with such active P levels, n++ Ge is still an indirect band gap material and could result in very high threshold current densities. In this work, we demonstrate P-doped Ge layers with active n-type doping beyond 1020 cm-3, grown using Ge2H6 and PH3 and subsequently laser annealed, targeting power-efficient on-chip laser sources. The use of Ge2H6 precursors during the growth of P-doped Ge increases the active P concentration level to a record fully activated concentration of 1.3×1020 cm-3 when laser annealed with a fluence of 1.2 J/cm2. The material stack consisted of 200 nm thick P-doped Ge grown on an annealed 1 µm Ge buffer on Si. Ge:P epitaxy was performed with PH3 and Ge2H6 at 320oC. Low temperature growth enable Ge:P epitaxy far from thermodynamic equilibrium, resulting in an enhanced incorporation of P atoms [3]. At such high active P concentration, the n++ Ge layer is expected to be a pseudo-direct band gap material. The photoluminescence (PL) intensities for layers with highest active P concentration show an enhancement of 18× when compared to undoped Ge grown on Si as shown in Fig. 1 and Fig. 2. The layers were optically pumped with a 640 nm laser and an incident intensity of 410 mW/cm2. The PL was measured with a NIR spectrometer with a Hamamatsu R5509-72 NIR photomultiplier tube detector whose detectivity drops at 1620 nm. Due to high active P concentration, we expect band gap narrowing phenomena to push the PL peak to wavelengths beyond the detection limit

TEM studies of P+ implanted and subsequently laser annealed Si

International Nuclear Information System (INIS)

Sadana, D.K.; Wilson, M.C.; Booker, G.R.; Washburn, J.

1979-05-01

The present investigation is concerned with laser annealing of P + implanted Si. The aim of the work was to study the crystallization behavior of damage structure occurring due to high dose rate implantation using transmission electron microscopy (TEM) as the method of examination

CO2 Laser annealing of n-doped hydrogenated amorphous silicon

International Nuclear Information System (INIS)

Bertolotti, M.; Ferrari, A.; Evangelisti, F.; Fiorini, P.; Proietti, M.G.

1985-01-01

Low power CO 2 laser annealing of n-doped a-Si:H is reported. Conductivity and its activation energy, photoconductivity, absorption coefficient and dependence of photoconductivity on light power show changes which can be interpreted as due to a better doping efficiency

On the analysis of the activation mechanisms of sub-melt laser anneals

International Nuclear Information System (INIS)

Clarysse, T.; Bogdanowicz, J.; Goossens, J.; Moussa, A.; Rosseel, E.; Vandervorst, W.; Petersen, D.H.; Lin, R.; Nielsen, P.F.; Hansen, Ole; Merklin, G.; Bennett, N.S.; Cowern, N.E.B.

2008-01-01

In order to fabricate carrier profiles with a junction depth (∼15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt laser anneal is a promising route to explore. As laser annealed junctions seem to outperform standard anneal approaches, a detailed assessment of the basics of laser induced activation seem appropriate. In this work the electrical activation is studied from a comparison between the dopant profiles as measured by Secondary Ion Mass Spectrometry, and the electrically active fraction as extracted from sheet resistance and mobility measurements. The latter is based on a large variety of techniques. For the sheet resistance we use conventional Four-Point Probe (FPP), Variable Probe Spacing (VPS), contactless junction photo voltage (JPV), Micro Four-Point Probe (M4PP) and an optical technique, namely Model Based Infra-red spectroscopic Reflectrometry (MBIR). For the sheet carrier density and sheet mobility extraction we use conventional Hall (without cloverleaf van der Pauw patterning, to reflect the need for fast turn-round sheet measurements), MBIR, and a recently developed new Hall-like capability using M4PP. By recognizing the interaction between the various parameters as they are not completely independent, it is possible to test the consistency of the various methods and to identify potential short comings. This concept is applied to the activation behavior of low and high implanted Boron doses and indicates that the obtained electrically active concentration level as well as the concurrent mobility is dependent on the dopant concentration level. This implies that the activation of B through the laser anneal process in the explored temperature-time space is governed by kinetic processes (i.e. the dissolution of B-I pairs) and not by the (temperature related) solid solubility

Enabling laser applications in microelectronics manufacturing

Science.gov (United States)

Delmdahl, Ralph; Brune, Jan; Fechner, Burkhard; Senczuk, Rolf

2016-02-01

In this experimental study, we report on high-pulse-energy excimer laser drilling into high-performance build-up films which are pivotal in microelectronics manufacturing. Build-up materials ABF-GX13 from Ajinomoto as well as ZS-100 from Zeon Corporation are evaluated with respect to their viability for economic excimer laser-based micro-via formation. Excimer laser mask imaging projection at laser wavelengths of 193, 248 and 308 nm is employed to generate matrices of smaller micro-vias with different diameters and via pitches. High drilling quality is achievable for all excimer laser wavelengths with the fastest ablation rates measured in the case of 248 and 308 nm wavelengths. The presence of glass fillers in build-up films as in the ABF-GX13 material poses some limitations to the minimum achievable via diameter. However, surprisingly good drilling results are obtainable as long as the filler dimensions are well below the diameter of the micro-vias. Sidewall angles of vias are controllable by adjusting the laser energy density and pulse number. In this work, the structuring capabilities of excimer lasers in build-up films as to taper angle variations, attainable via diameters, edge-stop behavior and ablation rates will be elucidated.

Four-year to seven-year outcomes of advanced surface ablation with excimer laser for high myopia

DEFF Research Database (Denmark)

Hansen, Rasmus Søgaard; Lyhne, Niels; Grauslund, Jakob

2015-01-01

Purpose: To evaluate and compare long-term outcomes ofafter photorefractive keratectomy with cooling (cPRK) and laser-assisted subepithelial keratectomy (LASEK) for high myopia. Methods: Retrospective single-masked follow-up study of patients treated for myopia between 2007 and 2009 with cPRK...... or LASEK, using a high-frequency flying-spot excimer laser with eye-tracker (MEL80; Carl Zeiss, Jena, Germany). One eye of each patient was randomly chosen for analysis. Re-treated eyes were excluded. Results: Forty-six cPRK patients and 35 LASEK patients were included. Spherical equivalent averaged -7.......69 ± 1.47 diopters (D) in cPRK eyes and -7.98 ± 2.06 D in LASEK eyes (P=0.31) before surgery. Average follow-up time was 4.6 years in cPRK patients and 6.0 years in LASEK patients (PPRK eyes and 1 LASEK eye (P=0.46) had lost 2 lines of corrected distance visual acuity...

O impacto da cirurgia de ceratectomia fotorrefrativa (PRK e ceratomileuse assistida por excimer laser in situ (LASIK na qualidade visual e de vida em pacientes com ametropias The impact of photorefractive excimer laser keratectomy (PRK and laser in situ keratomileusis (LASIK on visual quality and life in patients with ametropias

Directory of Open Access Journals (Sweden)

Ricardo Belfort

2008-02-01

Full Text Available OBJETIVO: Avaliar a qualidade de vida e de visão e o estresse de pacientes portadores de ametropias submetidos a procedimentos cirúrgicos. MÉTODOS: Estudo longitudinal observacional em que foram estudados 100 pacientes; 54 usuários de óculos, 21 usuários de lentes de contato interessados no procedimento cirúrgico e 25 controles usuários de óculos ou lentes de contato, mas que não desejavam ser operados no período de um ano. Os questionários aplicados foram o National Eye Institute Visual Function Questionnaire (NEI-VFQ-25 de qualidade de vida e o Self Reporting Questionnaire - SRQ-20 para avaliação da saúde mental. Os pacientes que se submeteram à cirurgia responderam aos questionários aplicados por uma observadora antes da mesma, três, seis e doze meses após a intervenção. O grupo controle respondeu de forma auto-aplicada no início do estudo, seis e doze meses após a primeira avaliação. RESULTADOS: No grupo da cirugia dos 54 pacientes que usavam óculos 39 fizeram cirurgia de ceratectomia fotorrefrativa por excimer laser(PRK e 15 fizeram ceratomileuse assistida por excimer laserin situ (LASIK e dos 21 que usavam lentes de contato 12 fizeram cirurgia de ceratectomia fotorrefrativa e nove fizeram ceratomileuse assistida por excimer laser in situ (LASIK. O grupo controle esteve estável durante os 12 meses em relação aos instrumentos aplicados. Três meses após a cirurgia o grupo da cirurgia apresentou melhora significante da qualidade de vida e de visão em relação ao pré-operatório independentemente do tipo de cirurgia realizada. Um ano após a cirurgia os índices de qualidade de vida e de saúde mental, foram semelhantes aos do grupo controle. O Self Reporting Questionnaire - SRQ 20 mostrou diminuição significante do índice de sintomas a partir dos três meses de pós-operatório. CONCLUSÃO: A qualidade de visão e de vida dos pacientes submetidos à cirurgia de correção de ametropia mudou

excimer laser

Indian Academy of Sciences (India)

2014-01-07

Jan 7, 2014 ... is necessary to deposit one order higher input electric power into gas medium than ... cross-sectional view of the laser system is shown in figure 2A. The system mainly consists ... Considering the simplicity and reliability of the.

Screening for psychiatric distress and low self-esteem in patients presenting for excimer laser surgery for myopia.

Science.gov (United States)

Kidd, B; Stark, C; McGhee, C N

1997-01-01

Patients presenting for photorefractive keratectomy (PRK) may have unusual psychological profiles. Certain psychological variables may impact treatment outcome, making early identification crucial. We report a controlled questionnaire study of psychiatric "anxiety/distress" and self-esteem in myopic patients who presented for excimer laser treatment. Ninety consecutive myopic individuals (patients) who presented for excimer laser PRK and 50 consecutive myopic individuals who presented to an optometrist for contact lens fitting (controls) were assessed using two self-completion questionnaires-the GHQ30 and Hudson Index of Self-Esteem ISE. The questionnaires were distributed during assessment for treatment. PRK patients had a 90% response rate for both questionnaires and control patients, 98% for GHQ30 and 100% for Hudson ISE. PRK patients were significantly older (p = 0.000003), had a greater myopic spherical equivalent refraction (p = 0.012) and had better spectacle-corrected visual acuity (p = 0.0096). No significant differences were demonstrated with regard to anxiety/distress in terms of absolute scores (p = 0.07), or the proportion of patients being positive or negative (p = 0.10). Similarly, self-esteem was not significantly different between the two groups (absolute scores p = 0.69; positive/negative p = 0.29). The high response rate shows that the GHQ30 and Hudson ISE are easy to use and well tolerated by myopes in a busy clinic setting. The fact that the patients were older, with a greater refractive error, may partly reflect the onset of contact lens intolerance. The psychological findings suggest that PRK patients cannot be considered more distressed or anxious than other myopic individuals. There is no evidence that their decision to undergo surgery is driven by abnormally low self-esteem.

Excimer PRK testing in the clinic

Science.gov (United States)

Forrest, Gary T.

1994-06-01

Testing of the excimer lasers used in PRK requires special considerations in terms of ease of use, day-to-day reliability, and high resolution to see details of beam interference effects. SensorPhysics employs a patented photochromic material on a polyester substrate to record permanent, instant records of the laser and laser system output. Since each SensorCard is used only once concerns about detection device deterioration are not an issue. The SensorCards have a demonstrated resolving power on the order of 0.1 micrometers . A small, portable reading device is used to convert the SensorCard optical density to a mJ/cm2 value. Special software also measures beam uniformity to +/- 1% to provide both qualitative and quantitative analysis. Results of use in clinic environments will be presented. In particular detection of exposure `islands' will be demonstrated. The techniques employed are similar to those we developed for UV laser micromachining and lithography four years ago.

Excimer laser texturing of natural composite polymer surfaces for studying cell-to-substrate specific response

Energy Technology Data Exchange (ETDEWEB)

Dinca, V., E-mail: dincavalentina@yahoo.com [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, Magurele, Bucharest (Romania); Alloncle, P.; Delaporte, P. [Aix-Marseille University, CNRS, LP3 Laboratory, Campus de Luminy, 13288 Marseille (France); Ion, V. [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, Magurele, Bucharest (Romania); Faculty of Physics, University of Bucharest, 077125 Magurele (Romania); Rusen, L.; Filipescu, M. [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, Magurele, Bucharest (Romania); Mustaciosu, C. [Horia Hulubei National Institute of Physics and Nuclear Engineering – IFIN HH, Magurele, Bucharest (Romania); Luculescu, C.; Dinescu, M. [NILPRP, National Institute for Lasers, Plasma and Radiation Physics, Magurele, Bucharest (Romania)

2015-10-15

Highlights: • Roughness gradients are obtained in one step by applying single laser pulses and sample tilting. • BSA protein and cell dependence behavior onto gradient characteristics was studied. • The degradation of the samples by lysozyme was correlated to its ability to access the textured area. - Abstract: Surface modifications of biocompatible materials are among the main factors used for enhancing and promoting specific cellular activities (e.g. spreading, adhesion, migration, and differentiation) for various types of medical applications such as implants, microfluidic devices, or tissue engineering scaffolds. In this work an excimer laser at 193 nm was used to fabricate chitosan–collagen roughness gradients. The roughness gradients were obtained in one step by applying single laser pulses and sample tilting. Fourier transform infrared spectroscopy measurements, atomic force microscopy (AFM), scanning electron microscopy (SEM), and spectro-ellipsometry (SE) were used for sample characterization. The goal is to determine the optimal morpho-chemical characteristics of these structures for in vitro tailoring of protein adsorption and cell behavior. The response induced by the roughness gradient onto various cell lines (i.e. L 929 fibroblasts, HEP G2 hepatocytes, OLN 93 oligodendrocytes, M63 osteoblasts) and bovine serum albumin (BSA) protein absorption was investigated.

Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions

DEFF Research Database (Denmark)

Petersen, Dirch Hjorth; Lin, Rong; Hansen, Torben Mikael

2008-01-01

have been used to characterize the sheet resistance uniformity of millisecond laser annealed USJs. They verify, both experimentally and theoretically, that the probe pitch of a four-point probe can strongly affect the measured sheet resistance. Such effect arises from the sensitivity (or "spot size......In this comparative study, the authors demonstrate the relationship/correlation between macroscopic and microscopic four-point sheet resistance measurements on laser annealed ultra-shallow junctions (USJs). Microfabricated cantilever four-point probes with probe pitch ranging from 1.5 to 500 mu m......") of an in-line four-point probe. Their study shows the benefit of the spatial resolution of the micro four-point probe technique to characterize stitching effects resulting from the laser annealing process....

A study on electric properties for pulse laser annealing of ITO film after wet etching

International Nuclear Information System (INIS)

Lee, C.J.; Lin, H.K.; Li, C.H.; Chen, L.X.; Lee, C.C.; Wu, C.W.; Huang, J.C.

2012-01-01

The electric properties of ITO thin film after UV or IR laser annealing and wet etching was analyzed via grazing incidence in-plane X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectra and residual stress measurement. The laser annealing process readily induced microcracks or quasi-microcracks on the ITO thin film due to the residual tension stress of crystalline phase transformation between irradiated and non-irradiated areas, and these defects then became the preferred sites for a higher etching rate, resulting in discontinuities in the ITO thin film after the wet etching process. The discontinuities in the residual ITO thin film obstruct carrier transmission and further result in electric failure. - Highlights: ► The laser annealing process induces microcracks in InSnO 2 thin films. ► The defects result in higher local etching rate during wet etching. ► These process defects originate from residual tension stress. ► Decreasing the thermal shock is suggested in order to reduce these process defects.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

International Nuclear Information System (INIS)

Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D.; Pavesi, M.

2014-01-01

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

Energy Technology Data Exchange (ETDEWEB)

Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Pavesi, M. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Istituto di Fisica e Scienze della Terra, Università degli Studi di Parma, Parma (Italy)

2014-06-23

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

Randomized controlled study of excimer laser atherectomy for treatment of femoropopliteal in-stent restenosis: initial results from the EXCITE ISR trial (EXCImer Laser Randomized Controlled Study for Treatment of FemoropopliTEal In-Stent Restenosis).

Science.gov (United States)

Dippel, Eric J; Makam, Prakash; Kovach, Richard; George, Jon C; Patlola, Raghotham; Metzger, D Christopher; Mena-Hurtado, Carlos; Beasley, Robert; Soukas, Peter; Colon-Hernandez, Pedro J; Stark, Matthew A; Walker, Craig

2015-01-01

The purpose of this study was to evaluate the safety and efficacy of excimer laser atherectomy (ELA) with adjunctive percutaneous transluminal angioplasty (PTA) versus PTA alone for treating patients with chronic peripheral artery disease with femoropopliteal bare nitinol in-stent restenosis (ISR). Femoropopliteal stenting has shown superiority to PTA for lifestyle-limiting claudication and critical limb ischemia, although treating post-stenting artery reobstruction, or ISR, remains challenging. The multicenter, prospective, randomized, controlled EXCITE ISR (EXCImer Laser Randomized Controlled Study for Treatment of FemoropopliTEal In-Stent Restenosis) trial was conducted across 40 U.S. centers. Patients with Rutherford Class 1 to 4 and lesions of target lesion length ≥4 cm, vessel diameter 5 to 7 mm were enrolled and randomly divided into ELA + PTA and PTA groups by a 2:1 ratio. The primary efficacy endpoint was target lesion revascularization (TLR) at 6-month follow up. The primary safety endpoint was major adverse event (death, amputation, or TLR) at 30 days post-procedure. Study enrollment was stopped at 250 patients due to early efficacy demonstrated at a prospectively-specified interim analysis. A total of 169 ELA + PTA subjects (62.7% male; mean age 68.5 ± 9.8 years) and 81 PTA patients (61.7% male; mean age 67.8 ± 10.3 years) were enrolled. Mean lesion length was 19.6 ± 12.0 cm versus 19.3 ± 11.9 cm, and 30.5% versus 36.8% of patients exhibited total occlusion. ELA + PTA subjects demonstrated superior procedural success (93.5% vs. 82.7%; p = 0.01) with significantly fewer procedural complications. ELA + PTA and PTA subject 6-month freedom from TLR was 73.5% versus 51.8% (p < 0.005), and 30-day major adverse event rates were 5.8% versus 20.5% (p < 0.001), respectively. ELA + PTA was associated with a 52% reduction in TLR (hazard ratio: 0.48; 95% confidence interval: 0.31 to 0.74). The EXCITE ISR trial is the first large, prospective, randomized study

Lasers '89

International Nuclear Information System (INIS)

Harris, D.G.; Shay, T.M.

1990-01-01

This book covers the following topics: XUV, X-Ray and Gamma-Ray Lasers, excimer lasers, chemical lasers, nuclear pumped lasers, high power gas lasers, solid state lasers, laser spectroscopy. The paper presented include: Development of KrF lasers for fusion and Nuclear driven solid-state lasers

Excimer Laser Surgery: Biometrical Iris Eye Recognition with Cyclorotational Control Eye Tracker System.

Science.gov (United States)

Pajic, Bojan; Cvejic, Zeljka; Mijatovic, Zoran; Indjin, Dragan; Mueller, Joerg

2017-05-25

A prospective comparative study assessing the importance of the intra-operative dynamic rotational tracking-especially in the treatment of astigmatisms in corneal refractive Excimer laser correction-concerning clinical outcomes is presented. The cyclotorsion from upright to supine position was measured using iris image comparison. The Group 1 of patients was additionally treated with cyclorotational control and Group 2 only with X-Y control. Significant differences were observed between the groups regarding the mean postoperative cylinder refraction ( p < 0.05). The mean cyclotorsion can be calculated to 3.75° with a standard deviation of 3.1°. The total range of torsion was from -14.9° to +12.6°. Re-treatment rate was 2.2% in Group 1 and 8.2% in Group 2, which is highly significant ( p < 0.01). The investigation confirms that the dynamic rotational tracking system used for LASIK results in highly predictable refraction quality with significantly less postoperative re-treatments.

Acute effects of pulsed-laser irradiation on the arterial wall

Science.gov (United States)

Nakamura, Fumitaka; Kvasnicka, Jan; Lu, Hanjiang; Geschwind, Herbert J.; Levame, Micheline; Bousbaa, Hassan; Lange, Francoise

1992-08-01

Pulsed laser coronary angioplasty with an excimer or a holmium-yttrium-aluminum-garnet (Ho:YAG) laser may become an alternative treatment for patients with coronary artery disease. However, little is known about its acute consequences on the normal arterial wall. This study was designed to examine the acute histologic consequences of these two pulsed lasers on the arterial wall of normal iliac arteries in rabbits. Irradiation with each laser was performed in 15 normal iliac sites on eight male New Zealand white rabbits. The excimer laser was operated at 308 nm, 25 Hz, 50 mJ/mm2/pulse, and 135 nsec/pulse and the Ho:YAG laser was operated at 2.1 micrometers , 3/5 Hz, 400 mJ/pulse, and 250 microsecond(s) ec/pulse. The excimer and Ho:YAG laser were coupled into a multifiber wire-guided catheter of 1.4 and 1.5 mm diameter, respectively. The sites irradiated with excimer or Ho:YAG laser had the same kinds of histologic features, consisting of exfoliation of the endothelium, disorganization of internal elastic lamina, localized necrosis of vascular smooth muscle cells, and fissures in the medial layer. However, the sites irradiated with excimer laser had lower grading scores than those irradiated with Ho:YAG laser (p vascular injury.

Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

DEFF Research Database (Denmark)

Shayesteh, M.; O'Connell, D.; Gity, F.

2014-01-01

The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ide...

Lasing of Some Red Laser Dyes in Annealed Silica Xerogel

Science.gov (United States)

Bezkrovnaya, O. N.; Maslov, V. V.; Pritula, I. M.; Yurkevich, A. G.

2018-01-01

The spectral and energy characteristics of generation in the red spectral region 650-720 nm were measured and analyzed for three laser dyes in preliminarily annealed SiO2 xerogel matrices under laser excitation λp = 588 nm in a nonselective cavity. The specific laser-energy output for two of them (LK678 and Ox170) in the matrices was 10-13% higher than in MeOH. NBA dye in the matrix generated two laser radiation bands in the 700-720 nm region with pumping E p ≥ 80 mJ whereas its generation threshold in MeOH exceeded the maximum pumping energy of 140 mJ so that NBA generation was not observed. Laser emission spectra of the studied matrices in a nonselective cavity were red-shifted by 1000 cm-1 from the fluorescence maximum. Such a shift could improve the characteristics of biosensors based on these matrices.

Suppression of dewetting phenomena during excimer laser melting of thin metal films on SiO2

International Nuclear Information System (INIS)

Kline, J.E.; Leonard, J.P.

2005-01-01

Pulsed excimer laser irradiation has been used to fully melt 200 nm films of elemental Au and Ni on SiO 2 substrates. With the use of a capping layer of SiO 2 and line irradiation via projection optics, the typical liquid-phase dewetting processes associated with these metals on SiO 2 has been suppressed. In a series of experiments varying line widths and fluence, a process region is revealed immediately above the complete melting threshold for which the films remain continuous and smooth after melting and resolidification. Simple energetic arguments for mechanisms leading to initiation of dewetting support these observations, and a gas-mediated model is proposed to describe the process conditions that are necessary for the suppression of dewetting

Modeling of excimer laser radiation induced defect generation in fluoride phosphate glasses

International Nuclear Information System (INIS)

Natura, U.; Ehrt, D.

2001-01-01

Fluoride phosphate (FP) glasses with low phosphate content are high-transparent in the deep ultraviolet (UV) range and attractive candidates for UV-optics. Their optical properties are complementary to fluoride crystals. The anomalous partial dispersion makes them desirable for optical lens designs to reduce the secondary spectrum. Their UV transmission is limited by trace impurities introduced by raw materials and decreases when exposed to UV-radiation (lamps, lasers). The experiments of the paper published previously in this journal were used in order to separate radiation induced absorption bands in the fluoride phosphate glass FP10. In this paper the generation mechanism of the phosphorus-oxygen related hole center POHC 2 is investigated in detail in glasses of various compositions (various phosphate and impurity contents) in order to predict the transmission loss in case of long-time irradiation. Experiments were carried out using ArF- and KrF-excimer lasers (ns-pulses). POHC 2 generation strongly depends on the phosphate content and on the content of Pb 2+ . A model was developed on these terms. Rate equations are formulated, incorporating the influence of the Pb 2+ -content on the defect generation, a two-step creation term including an energy transfer process and a one-photon bleaching term. This results in a set of coupled nonlinear differential equations. Absorption coefficients and lifetimes of the excited states were calculated as well. Experimental results compared well with the numerical analysis of the theoretical rate equations

Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

Science.gov (United States)

Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

2018-03-01

Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

Gasochromic performance of WO{sub 3}-nanorod thin films fabricated with an ArF excimer laser

Energy Technology Data Exchange (ETDEWEB)

Yaacob, M. H. [RMIT University, Melbourne (Australia); Universiti Putra Malaysia, Selangor (Malaysia); Ou, J. Z.; Wlodarski, W. [RMIT University, Melbourne (Australia); Kim, C. S.; Lee, J. Y. [KAIST, Daejon (Korea, Republic of); Kim, Y. H. [KIST, Seoul (Korea, Republic of); Oh, C. M.; Dhakal, K. P.; Kim, J. Y.; Kang, J. H. [University of Incheon, Incheon (Korea, Republic of)

2012-02-15

Thin films with tungsten trioxide (WO{sub 3}) nanorods were fabricated by using an ArF pulsed laser deposition system. Because the ArF excimer laser operates at a very short wavelength of 193 nm, short enough to expect strong absorption of the photons in the semiconductor oxide targets, and because the clusters incoming to the substrates have high momentum, we could build thin films with good surface morphology. Highly homogeneous arrays of nanorods with sizes mostly in the range of 30 - 40 nm were observed. The absorbance response towards hydrogen (H{sub 2}) gas was investigated for a WO{sub 3} film coated with 25-A-thick palladium (Pd). The Pd/WO{sub 3}-nanorod thin films exhibited excellent gasochromic response when measured in the visible-NIR range (400 - 1000 nm). As low as 0.06% H{sub 2} concentration was clearly sensed. A significant reversible absorbance change and fast recovery (<2 min) were observed when the films were exposed to H{sub 2} at different concentrations.

Consistent comparison of angle Kappa adjustment between Oculyzer and Topolyzer Vario topography guided LASIK for myopia by EX500 excimer laser.

Science.gov (United States)

Sun, Ming-Shen; Zhang, Li; Guo, Ning; Song, Yan-Zheng; Zhang, Feng-Ju

2018-01-01

To evaluate and compare the uniformity of angle Kappa adjustment between Oculyzer and Topolyzer Vario topography guided ablation of laser in situ keratomileusis (LASIK) by EX500 excimer laser for myopia. Totally 145 cases (290 consecutive eyes )with myopia received LASIK with a target of emmetropia. The ablation for 86 cases (172 eyes) was guided manually based on Oculyzer topography (study group), while the ablation for 59 cases (118 eyes) was guided automatically by Topolyzer Vario topography (control group). Measurement of adjustment values included data respectively in horizontal and vertical direction of cornea. Horizontally, synclastic adjustment between manually actual values (dx manu ) and Oculyzer topography guided data (dx ocu ) accounts 35.5% in study group, with mean dx manu /dx ocu of 0.78±0.48; while in control group, synclastic adjustment between automatically actual values (dx auto ) and Oculyzer topography data (dx ocu ) accounts 54.2%, with mean dx auto /dx ocu of 0.79±0.66. Vertically, synclastic adjustment between dy manu and dy ocu accounts 55.2% in study group, with mean dy manu /dy ocu of 0.61±0.42; while in control group, synclastic adjustment between dy auto and dy ocu accounts 66.1%, with mean dy auto /dy ocu of 0.66±0.65. There was no statistically significant difference in ratio of actual values/Oculyzer topography guided data in horizontal and vertical direction between two groups ( P =0.951, 0.621). There is high consistency in angle Kappa adjustment guided manually by Oculyzer and guided automatically by Topolyzer Vario topography during corneal refractive surgery by WaveLight EX500 excimer laser.

Corneal ablation depth readout of the MEL 80 excimer laser compared to Artemis three-dimensional very high-frequency digital ultrasound stromal measurements.

Science.gov (United States)

Reinstein, Dan Z; Archer, Timothy J; Gobbe, Marine

2010-12-01

To evaluate the accuracy of the ablation depth readout for the MEL 80 excimer laser (Carl Zeiss Meditec). Artemis 1 very high-frequency digital ultrasound measurements were obtained before and at least 3 months after LASIK in 121 eyes (65 patients). The Artemis-measured ablation depth was calculated as the maximum difference in stromal thickness before and after treatment. Laser in situ keratomileusis was performed using the MEL 80 excimer laser and the Hansatome microkeratome (Bausch & Lomb). The Aberration Smart Ablation profile was used in 56 eyes and the Tissue Saving Ablation profile was used in 65 eyes. All ablations were centered on the corneal vertex. Comparative statistics and linear regression analysis were performed between the laser readout ablation depth and Artemis-measured ablation depth. The mean maximum myopic meridian was -6.66±2.40 diopters (D) (range: -1.50 to -10.00 D) for Aberration Smart Ablation-treated eyes and -6.50±2.56 D (range: -1.34 to -11.50 D) for Tissue Saving Ablation-treated eyes. The MEL 80 readout was found to overestimate the Artemis-measured ablation depth by 20±12 μm for Aberration Smart Ablation and by 21±12 μm for Tissue Saving Ablation profiles. The accuracy of ablation depth measurement was improved by using the Artemis stromal thickness profile measurements before and after surgery to exclude epithelial changes. The MEL 80 readout was found to overestimate the achieved ablation depth. The linear regression equations could be used by MEL 80 users to adjust the ablation depth for predicted residual stromal thickness calculations without increasing the risk of ectasia due to excessive keratectomy depth as long as a suitable flap thickness bias is included. Copyright 2010, SLACK Incorporated.

Does imiquimod pretreatment optimize 308-nm excimer laser (UVB) therapy in psoriasis patients?

Science.gov (United States)

Tacastacas, Joselin D; Oyetakin-White, Patricia; Soler, David C; Young, Andrew; Groft, Sarah; Honda, Kord; Cooper, Kevin D; McCormick, Thomas S

2017-07-01

Psoriasis continues to be a debilitating skin disease affecting 1-3% of the United States population. Although the effectiveness of several current biologic therapies have described this pathology as a IL-23, TNF-a and Th17-mediated disease, less invasive approaches are still in use and in need of refinement. One of these is the usage of narrow band-UVB (NB-UVB) therapy to deplete specifically intra-epidermal CD3+, CD4+ and CD8+ cells to clear psoriatic plaques. In order to improve NB-UVB therapy, we sought to determine whether skin pre-treatment with the TLR7 agonist imiquimod (IMQ) would help increase the efficiency of the former at resolving psoriatic plaques. Eucerin ® Original Moisturizing Lotion (topical vehicle) or Aldara ® (imiquimod 5% topical cream) were applied for 5 days once daily to a maximum contiguous area of 25 cm 2 (5 cm × 5 cm area). Patients were provided with sachets containing 12.5 mg of imiquimod each and were instructed to apply imiquimod (I) to two psoriasis plaques (5 sachets of imiquimod allotted to each plaque). A PHAROS excimer Laser EX-308 (Ra Medical Systems, Inc. Carlsbad, CA, USA) with an output of monochromatic 308-nm light and pulse width of 20-50 ns was used for all patients. Punch biopsies of psoriatic lesions (6 mm) were taken at 4 and 48 h after final application of topical treatment with or without excimer laser treatment. Real-time quantitative RT-PCR was performed according to manufacturer's instructions and Inmunohistochemistry was used as described before. Our results suggests that although IMQ seemed to activate the type I interferon pathway as previously described, its concomitant usage with NB-UVB for clearing psoriatic skin was ineffective. Although upregulation of genes MxA, GRAMD1A and DMXL2 suggested that IMQ treatment did induce skin changes in psoriasis patients, more optimal dosing of IMQ and NB-UVB might be necessary to achieve desired treatment responses. The observation that psoriasis involvement was not

Development in high speed and high quality laser cutting process in fiber reinforced plastics; FRP no laser ni yoru kosoku, kohinshitsu setsudan gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

Ishide, T.; Shirota, H.; Matsumoto, O. [Mitsubishi Heavy Industries, Ltd., Tokyo (Japan)

1996-06-01

Trimming was performed and studied by cutting KFRP, an epoxy matrix with Kevlar fiber woven thereinto, using various laser beams. The CO2 laser is capable of high-speed cutting but the product is low in quality. The surface of a cut by the YAG laser is not high in quality even with its peak output elevated. The thermally affected area is smaller under the excimer laser but it is low in cutting speed. The ablation properties of the excimer laser were investigated and the beam was shaped into a linear beam for another experiment, but it failed to attain the target speed of cutting. Next, a combination of excimer laser and CO2 laser was used for cutting. It was so designed that the preceding CO2 laser cuts the KFRP at a high speed to leave behind a carbonized layer, which is followed by a linear beam which vaporizes the carbonized layer for removal. An optical system is adopted for reshaping the excimer oscillated beam into a tube-like beam. Optical conditions were determined for a fluence value required for the removal of the carbonized layer. When the CO2 laser was set at 160W and the excimer laser at 20W, a 1mm-thick sheet was successfully cut at a speed of 16.7mm/sec. 3 refs., 7 figs.

Surface studies on benzophenone doped PDMS microstructures fabricated using KrF excimer laser direct write lithography

International Nuclear Information System (INIS)

Kant, Madhushree Bute; Shinde, Shashikant D.; Bodas, Dhananjay; Patil, K.R.; Sathe, V.G.; Adhi, K.P.; Gosavi, S.W.

2014-01-01

Graphical abstract: - Highlights: • Use of KrF Laser micromachining for Lab-On-Chip applications at lower fluence. • Addition of Benzophenone in PDMS enhances its self development sensitivity. • Benzophenone helps efficient energy transfer for equal density of bond scissioning. • Correlation of chemical composition with laser dose and microstructure. • Microstructures with well defined clean sidewalls. - Abstract: This paper discusses microfabrication process for benzophenone doped polydimethylsiloxane (PDMS) using laser lithography. KrF excimer laser of 248 nm with 20 ns pulse width at repetition rate of 1 Hz was used for microfabrication of undoped and benzophenone doped PDMS. The doped-PDMS shows sensitivity below 365 nm, permitting processing under ambient light. The analysis of etch depth revealed that doped PDMS shows self developable sensitivity at lower fluence of ∼250 mJ/cm 2 . The unexposed and exposed surface was studied using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Scanning electron microscopy (SEM). Spectrocopic analysis indicated increase in C-O, C=O, Si-O 3 and Si-O 4 bonding at the expense of Si-C and Si-O 2 bonds of PDMS. In case of laser exposed doped-PDMS, removal of benzophenone from probe depth of spectroscopy was observed. Whereas the surface morphology of exposed and unexposed doped-PDMS was observed to be same, indicating clean development of PDMS micropatterns. The present study indicates that addition of 3.0 wt.% benzophenone in PDMS enhance self development sensitivity of PDMS. The self developable results on doped-PDMS are quite encouraging for its potential use in point of care Lab-On-Chip applications, for fabricating micropatterns using direct write laser lithography technology

Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

Science.gov (United States)

Lao, Pudong; Tang, Wade C.; Rajkumar, K. C.; Guha, S.; Madhukar, A.; Liu, J. K.; Grunthaner, F. J.

1990-01-01

The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

Simulation of beam pointing stability on targeting plane of high power excimer laser system

International Nuclear Information System (INIS)

Wang Dahui; Zhao Xueqing; Zhang Yongsheng; Zheng Guoxin; Hu Yun; Zhao Jun

2011-01-01

Based on characteristics of image-relaying structure in high power excimer MOPA laser system, simulation and analysis software of targeting beam's barycenter stability was designed by using LABVIEW and MATLAB. Simulation was made to measured results of every optical component in laboratory environment. Simulation and validation of budget values for optical components was and optimization of error budget of system was accomplished via post-allocation for several times. It is shown that targeting beam's barycenter stability in the condition of current laboratory environment can't satisfy needs and index of high demand optical components can be allotted to 1.7 μrad when index of low demand optical components have some stability margin. These results can provide a guide to construction of system and design and machining of optical components and optimization of system. Optical components of laboratory on work can satisfy optimized distributed index, which reduce the demand of structure to some extent. (authors)

Excimer-mediated photoionization of covalently-linked diaryl compounds: Energy thresholds for excimer formation and excimer-assisted photoionization of jet-cooled bis (9-Fluorenyl) methane

International Nuclear Information System (INIS)

Lee, Jae Kwang; Kang, Heun Kag; Cho, Han Joung; Boo, Bong Hyun; Lim, Edward C.

2001-01-01

Diarylakanes capable of adopting a face-to face arrangement of the two aromatic rings are ideal systems in which to probe the excited-state dynamics leading to excimer formation and the role of the singlet excimer in the photoionization of covalently linked bichromophoric molecules. Bis (9-eluorenyl) methane, BFM, is a good example of such diaryl compounds. Boo and co-workers have shown that BFM exhibits excrimer fluorescence in solution at ambient temperatures. An Arrhenius plot of the temperature-dependent excimer formation rate yielded activation energy of about 15 kJ·mol -1 . It has been proposed that the activation energy is related to the barrier for transforming the initial S 1 geometry to the face-to face (sandwich-pair) geometry of the intramolecular singlet excimer. This is accord with the study of an intramolecular excimer formation in jet-cooled 1, 3-diphenylpropane (DPP), and that of an intramolecular exciplex formation in 1-(9-anthryl)-3-(4-N, N-dimethylaniline) propane, which indicate that the energy threshold for such conformational changes is about 11 kJ·mol -1 .

Insight into excimer laser crystallization exploiting ellipsometry: Effect of silicon film precursor

Energy Technology Data Exchange (ETDEWEB)

Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)], E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, Maria M.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Mariucci, Luigi; Fortunato, Guglielmo [IFN-CNR, Via Cineto Romano, 42 - 00156 Rome (Italy)

2007-07-16

The optical diagnostic of spectroscopic ellipsometry is shown to be an effective tool to investigate the mechanism of excimer laser crystallization (ELC) of silicon thin films. A detailed spectroscopic ellipsometric investigation of the microstructures of polycrystalline Si films obtained on SiO{sub 2}/Si wafers by ELC of a-Si:H and nc-Si films deposited, respectively, by SiH{sub 4} plasma enhanced chemical vapor deposition (PECVD) and SiF{sub 4}-PECVD is presented. It is shown that ellipsometric spectra of the pseudodielectric function of polysilicon thin films allows to discern the three different ELC regimes of partial melting, super lateral growth and complete melting. Exploiting ellipsometry and atomic force microscopy, it is shown that ELC of nc-Si has very low energy density threshold of 95 mJ/cm{sup 2} for complete melting, and that re-crystallization to large grains of {approx} 2 {mu}m can be achieved by multi-shot irradiation at an energy density as low as 260 mJ/cm{sup 2} when using nc-Si when compared to 340 mJ/cm{sup 2} for the ELC of a-Si films.

3D plasmonic transducer based on gold nanoparticles produced by laser ablation on silica nanowires

Science.gov (United States)

Gontad, F.; Caricato, A. P.; Manera, M. G.; Colombelli, A.; Resta, V.; Taurino, A.; Cesaria, M.; Leo, C.; Convertino, A.; Klini, A.; Perrone, A.; Rella, R.; Martino, M.

2016-05-01

Silica two-dimensional substrates and nanowires (NWs) forests have been successfully decorated with Au nanoparticles (NPs) through laser ablation by using a pulsed ArF excimer laser, for sensor applications. A uniform coverage of both substrate surfaces with NPs has been achieved controlling the number of laser pulses. The annealing of the as-deposited particles resulted in a uniform well-defined distribution of spherical NPs with an increased average diameter up to 25 nm. The deposited samples on silica NWs forest present a very good plasmonic resonance which resulted to be very sensitive to the changes of the environment (ethanol/water solutions with increasing concentration of ethanol) allowing the detection of changes on the second decimal digit of the refractive index, demonstrating its potentiality for further biosensing functionalities.

Growth and annealing effect of SrTiO{sub 3} thin films grown by pulsed laser deposition using fourth harmonic Nd:YAG pulsed laser

Energy Technology Data Exchange (ETDEWEB)

Takamura, Koji; Fujiwara, Takumi; Yokota, Akinobu; Nakamura, Motonori; Yoshimoto, Ken' ichi [National Institute of Technology, Asahikawa College, 2-2-1-6 Shunkodai, Asahikawa 071-8142 (Japan)

2017-06-15

SrTiO{sub 3} homoepitaxial films were grown by pulsed laser deposition (PLD) using a fourth harmonic Nd:YAG pulsed laser. The substrate temperature was kept constant at 600, 700, or 800 C. The laser energy was set at 9-25 mJ on the polycrystal SrTiO{sub 3} target. Post-procedure annealing was performed in the air for 24 h. The X-ray diffraction measurement results showed that the lattice constant of the film was only 0.010 Aa larger than that of the substrate and was not dependent on the annealing temperature. We demonstrated the possibility of growing near-stoichiometric SrTiO{sub 3} film by PLD using an Nd:YAG laser. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Microstructure of pulsed-laser deposited PZT on polished and annealed MGO substrates

NARCIS (Netherlands)

King, S.L.; Coccia, L.G.; Gardeniers, Johannes G.E.; Boyd, I.W.

1996-01-01

Thin films of Lead-Zirconate-Titanate (PZT) have been grown by pulsed-laser-deposition (PLD) onto polished MgO substrates both with and without pre-annealing. The surface morphology of polished MgO substrates, which are widely used for deposition, is examined by AFM. Commercially available,

Excimer laser phototherapeutic keratectomy : Indications, results and its role in the Indian scenario

Directory of Open Access Journals (Sweden)

Rao Srinivas

1999-01-01

Full Text Available PURPOSE: To report indications, technique, and results of excimer phototherapeutic keratectomy (PTK, and describe possible reasons for the small numbers of such procedures performed in a referral institute in India. METHODS: Retrospective review of case records of 10 patients (11 eyes who underwent excimer PTK at our institute between February 1994 and September 1997. RESULTS: Corneal scars were the most common indication for treatment. Best-corrected visual acuity (BCVA improved in 6 eyes (mean: 2 lines of Snellen acuity. All eyes had BCVA > or = 6/12 after treatment. None of the patients experienced loss of BCVA after treatment. Unaided visual acuity improved in 3 eyes and decreased in 2 eyes. Change in spherical equivalent refraction > or = 1 diopter occurred in 77.8% of eyes after treatment. Treating central corneal scars resulted in a significant hyperopic shift in refraction. CONCLUSIONS: Excimer PTK is a safe and effective procedure for the treatment of superficial corneal opacities. Post-treatment ametropia may require further correction with optical aids. Inappropriate referrals, deep corneal scars, and cost of the procedure could have contributed to the small numbers of PTK performed at our institute. Improved understanding of procedural strengths and limitations could lead to increased use of this procedure, with satisfying results in selected patients.

Laser annealing effects of the Raman laser on nitrogen implanted glassy carbon

International Nuclear Information System (INIS)

Barbara, D.; Prawer, S.; Jamieson, D.N.

1996-01-01

Raman analysis is a popular method of investigating crystallite sizes, ordering and the types of bonds that exist in ion irradiated carbon materials, namely graphite, diamond and glassy carbon (G.C.). In particular Raman spectroscopy is used in determining the tetrahedral bonding required for the elusive and potentially important new material called carbon nitride. Carbon nitride, β-C 3 N 4 , is predicted to exist in several forms. Forming the tetrahedral bond between C and N has proved troublesome bain of many experimenters. A proven method for synthesizing novel materials is ion implantation. Thus G.C. was implanted with N at low temperatures so that diffusion of the implanted N would be hindered. G.C. is a relatively hard, chemically inert, graphitic material. The opaque property of G.C. means that Raman spectroscopy will only give information about the structures that exist at the surface and near surface layers. It was decided, after observing conflicting Raman spectra at different laser powers, that an investigation of the laser annealing effects of the Raman laser on the N implanted G.C. was warranted. The results of the preliminary investigation of the effects of increasing the Raman laser power and determining a power density threshold for high dose N implanted G.C. are discussed. 4 refs., 4 figs

Surface studies on benzophenone doped PDMS microstructures fabricated using KrF excimer laser direct write lithography

Energy Technology Data Exchange (ETDEWEB)

Kant, Madhushree Bute; Shinde, Shashikant D. [Department of Physics, University of Pune, Pune 411007 (India); Bodas, Dhananjay [Centre for Nanobioscience, Agharkar Research Institute, Agharkar road, Pune 411004 (India); Patil, K.R. [Center for Materials Characterization, National Chemical Laboratories, Pune 411008 (India); Sathe, V.G. [UGC DAE Inter University Consortium, Indore 452017 (India); Adhi, K.P. [Department of Physics, University of Pune, Pune 411007 (India); Gosavi, S.W., E-mail: swg@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India)

2014-09-30

Graphical abstract: - Highlights: • Use of KrF Laser micromachining for Lab-On-Chip applications at lower fluence. • Addition of Benzophenone in PDMS enhances its self development sensitivity. • Benzophenone helps efficient energy transfer for equal density of bond scissioning. • Correlation of chemical composition with laser dose and microstructure. • Microstructures with well defined clean sidewalls. - Abstract: This paper discusses microfabrication process for benzophenone doped polydimethylsiloxane (PDMS) using laser lithography. KrF excimer laser of 248 nm with 20 ns pulse width at repetition rate of 1 Hz was used for microfabrication of undoped and benzophenone doped PDMS. The doped-PDMS shows sensitivity below 365 nm, permitting processing under ambient light. The analysis of etch depth revealed that doped PDMS shows self developable sensitivity at lower fluence of ∼250 mJ/cm{sup 2}. The unexposed and exposed surface was studied using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Scanning electron microscopy (SEM). Spectrocopic analysis indicated increase in C-O, C=O, Si-O{sub 3} and Si-O{sub 4} bonding at the expense of Si-C and Si-O{sub 2} bonds of PDMS. In case of laser exposed doped-PDMS, removal of benzophenone from probe depth of spectroscopy was observed. Whereas the surface morphology of exposed and unexposed doped-PDMS was observed to be same, indicating clean development of PDMS micropatterns. The present study indicates that addition of 3.0 wt.% benzophenone in PDMS enhance self development sensitivity of PDMS. The self developable results on doped-PDMS are quite encouraging for its potential use in point of care Lab-On-Chip applications, for fabricating micropatterns using direct write laser lithography technology.

Growth of superconducting MgB2 films by pulsed-laser deposition using a Nd-YAG laser

International Nuclear Information System (INIS)

Badica, P; Togano, K; Awaji, S; Watanabe, K

2006-01-01

Thin films of MgB 2 on r-cut Al 2 O 3 substrates have been grown by pulsed-laser deposition (PLD) using a Nd-YAG laser (fourth harmonic-266 nm) instead of the popular KrF excimer laser. The growth window to obtain superconducting films is laser energy 350-450 mJ and vacuum pressure with Ar-buffer gas of 1-8/10 Pa (initial background vacuum 0.5-1 x 10 -3 Pa). Films were deposited at room temperature and post-annealed in situ and ex situ at temperatures of 500-780 0 C and up to 1 h. Films are randomly oriented with maximum critical temperature (offset of resistive transition) of 27 K. SEM/TEM/EDS investigations show that they are mainly composed of small sphere-like particles (≤20 nm), and contain oxygen and some carbon, uniformly distributed in the flat matrix, but the amount of Mg and/or oxygen is higher in the aggregates-droplets (100-1000 nm) observed on the surface of the film's matrix. Some aspects of the processing control and dependences on film characteristics are discussed. The technique is promising for future development of coated conductors

Optoelectronic study and annealing stability of room temperature pulsed laser ablated ZnSe polycrystalline thin films

Energy Technology Data Exchange (ETDEWEB)

Khan, Taj Muhammad, E-mail: tajakashne@gmail.com; Zakria, M.; Ahmad, Mushtaq; Shakoor, Rana I.

2014-03-15

In principal, we described stability of the room temperature ZnSe thin films with thermal annealing deposited onto glass by pulsed laser deposition technique using third harmonic 355 nm of Nd: YAG laser beam. Optoelectronic analysis and stability with thermal annealing was described in terms of structural and optical properties. These properties were investigated via X-ray diffraction, atomic force microscope, scanning electron microscope, Raman, Fourier transform infrared and photoluminescence spectroscopies. From the strong reflection corresponding to the (1 1 1) plane (2θ=27.48°) and the longitudinal optical “LO” phonon modes at 250 cm{sup −1} and 500 cm{sup −1} in the X-ray diffraction and Raman spectra, a polycrystalline zincblende structure of the film was established. At 300 and 350 °C annealing temperatures, the film crystallites were preferentially oriented with the (1 1 1) plane parallel to the substrate and became amorphous at 400 °C. Atomic force microscopic images showed that the morphologies of ZnSe films became smooth with root mean squared roughness 9.86 nm after annealing at 300 and 350 °C while a rougher surface was observed for the amorphous film at 400 °C. Fourier transform infrared study illustrated the chemical nature and Zn–Se bonding in the deposited films. For the as-deposited and annealed samples at 300 and 350 °C, scanning electron micrographs revealed mono-dispersed indistinguishable ZnSe grains and smooth morphological structure which changed to a cracking and bumpy surface after annealing at 400 °C. The physical phenomenon of annealing induced morphological changes could be explained in terms of “structure zone model”. Excitonic emission at 456 nm was observed for both as-deposited and annealed film at 350 °C. The transmission spectrum shows oscillatory behavior because of the thin film interference and exhibited a high degree of transparency down to a wavelength ∼500 nm in the IR region. Energy band-gap was

Excimer UV curing in printing

International Nuclear Information System (INIS)

Mehnert, R.

1999-01-01

It is the aim of this study to investigate the potential of 308 run excimer UV curing in web and sheet fed offset printing and to discuss its present status. Using real-time FTIR-ATR and stationary or pulsed monochromatic (313 nm) irradiation chemical and physical factors affecting the curing speed of printing inks such as nature and concentration of photo-initiators, reactivity of the ink binding system, ink thickness and pigmentation, irradiance in the curing plane, oxygen concentration and nitrogen inerting, multiple pulse exposure, the photochemical dark reaction and temperature dependence were studied. The results were used to select optimum conditions for excimer UV curing in respect to ink reactivity, nitrogen inerting and UV exposure and to build an excimer UV curing unit consisting of two 50 W/cm 308 run excimer lamps, power supply, cooling and inerting unit. The excimer UV curing devices were tested under realistic conditions on a web offset press zirkon supra forte and a sheet fed press Heidelberg GTO 52. Maximum curing speeds of 300 m/min in web offset and 8000 sheets per hour in sheet fed offset were obtained

Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

Science.gov (United States)

Huang, Hang; Hu, Hailong; Zhu, Jingguang; Guo, Tailiang

2017-07-01

Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm2/V s, threshold voltage of -8.5 V, and on/off current ratio >106. Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

Energy Technology Data Exchange (ETDEWEB)

Palneedi, Haribabu [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Maurya, Deepam; Priya, Shashank [Bio-inspired Materials and Devices Laboratory (BMDL), Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Kim, Gi-Yeop; Choi, Si-Young, E-mail: youngchoi@kims.re.kr [Materials Modeling and Characterization Department, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Kang, Suk-Joong L. [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Kim, Kwang-Ho [School of Materials Science and Engineering, Pusan National University, Busan 609-735 (Korea, Republic of); Ryu, Jungho, E-mail: jhryu@kims.re.kr [Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of)

2015-07-06

A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

Single application on iris localization technology in excimer laser for astigmatism

Directory of Open Access Journals (Sweden)

Jun-Hua Hao

2014-06-01

Full Text Available AIM:To discuss the single application on iris localization technology in excimer laser for the treatment of astigmatism. METHODS:Totally 203 cases(406 eyesof laser in situ keratomileusis(LASIKin the treatment of compound myopic astigmatism patients were operated from November 2011 to November 2012 in our hospital. They were divided into two groups. One was observation group using iris localization and the other was control group using routine operation. Patients in the observation group of 100 cases(200 eyes, aged 18-43 years old, spherical diopter was -1.25 to -8.75D, astigmatism was -1.0 to -3.25D. In control group, 103 patients(206 eyes, aged 19-44 years old, spherical diopter was -1.75-9.50D, astigmatism was -1.0 to -3.25D. The patients in the observation group before the application of WaveScan aberrometer check for iris image, spherical lens, cylindrical lens and astigmatism axis data operation, only single application of iris location, without using wavefront aberration guided technology, laser cutting patterns for conventional LASIK model, spherical, cylindrical mirror and astigmatism axis data source to preoperative wavefront aberration results. The control group received routine LASIK. It was applicated comprehensive optometry optometry respectively to examine astigmatism and axial, based on the computer analysis during the preoperative, 1wk after the operation, and 6mo. Analysis of using SPSS 17 statistical software, it was independent-sample t test between the two groups of residual astigmatism and astigmatism axis. RESULTS:Postoperative residual astigmatism, the observation group was significantly better than the control group. Astigmatism axial measurement after operation, the observation group was significantly less than that of the control group. Postoperative visual acuity at 6mo, the observation group was better than that of the control group. The difference was statistically significant. CONCLUSION: For patients who cannot

Laser annealing effects of the Raman laser on nitrogen implanted glassy carbon

Energy Technology Data Exchange (ETDEWEB)

Barbara, D.; Prawer, S.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1996-12-31

Raman analysis is a popular method of investigating crystallite sizes, ordering and the types of bonds that exist in ion irradiated carbon materials, namely graphite, diamond and glassy carbon (G.C.). In particular Raman spectroscopy is used in determining the tetrahedral bonding required for the elusive and potentially important new material called carbon nitride. Carbon nitride, {beta}-C{sub 3}N{sub 4}, is predicted to exist in several forms. Forming the tetrahedral bond between C and N has proved troublesome bain of many experimenters. A proven method for synthesizing novel materials is ion implantation. Thus G.C. was implanted with N at low temperatures so that diffusion of the implanted N would be hindered. G.C. is a relatively hard, chemically inert, graphitic material. The opaque property of G.C. means that Raman spectroscopy will only give information about the structures that exist at the surface and near surface layers. It was decided, after observing conflicting Raman spectra at different laser powers, that an investigation of the laser annealing effects of the Raman laser on the N implanted G.C. was warranted. The results of the preliminary investigation of the effects of increasing the Raman laser power and determining a power density threshold for high dose N implanted G.C. are discussed. 4 refs., 4 figs.

Laser annealing effects of the Raman laser on nitrogen implanted glassy carbon

Energy Technology Data Exchange (ETDEWEB)

Barbara, D; Prawer, S; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

1997-12-31

Raman analysis is a popular method of investigating crystallite sizes, ordering and the types of bonds that exist in ion irradiated carbon materials, namely graphite, diamond and glassy carbon (G.C.). In particular Raman spectroscopy is used in determining the tetrahedral bonding required for the elusive and potentially important new material called carbon nitride. Carbon nitride, {beta}-C{sub 3}N{sub 4}, is predicted to exist in several forms. Forming the tetrahedral bond between C and N has proved troublesome bain of many experimenters. A proven method for synthesizing novel materials is ion implantation. Thus G.C. was implanted with N at low temperatures so that diffusion of the implanted N would be hindered. G.C. is a relatively hard, chemically inert, graphitic material. The opaque property of G.C. means that Raman spectroscopy will only give information about the structures that exist at the surface and near surface layers. It was decided, after observing conflicting Raman spectra at different laser powers, that an investigation of the laser annealing effects of the Raman laser on the N implanted G.C. was warranted. The results of the preliminary investigation of the effects of increasing the Raman laser power and determining a power density threshold for high dose N implanted G.C. are discussed. 4 refs., 4 figs.

Preparation, characterization and optical properties of Gadolinium doped ceria thin films by pulsed laser deposition technique

International Nuclear Information System (INIS)

Nagaraju, P.; Vijaya Kumar, Y.; Vishnuvardhan Reddy, C.; Ramana Reddy, M.V.; Phase, D.M; Raghavendra Reddy, V.

2013-01-01

The growth of Gadolinium doped ceria thin films with controlled surface structure for device quality applications presents a significant problem for experimental investigation. In the present study gadolinium doped cerium oxide thin films were prepared by pulsed laser deposition (PLD) and were studied for their surface structure evaluation in relation to the optimized operating conditions during the stage of film preparation. The deposition was made with gadolinium concentration of 10 mole% to ceria pellets. The films were deposited on quartz substrate in the presence of oxygen partial pressure of 1.5 x 10 -3 torr using KrF Excimer laser with laser energy 220 mJ at a substrate temperature 700℃. The effect of annealing temperature on 10 mole% GDC thin film was investigated. The film thickness was measured by using AMBIOS make XP-l stylus profiler. As prepared and annealed thin films were characterized for crystallinity, particle size and orientation by using G.I.XRD. The films were characterized using atomic force microscopy (AFM). The AFM results gave a consistent picture of the evolution of GDC film surface morphologies and microstructures in terms of surface roughness, grain distribution and mean grain size. The optical transmittance spectra was used to determine the optical constants such as optical band gap, refractive index, extinction coefficient of as prepared and annealed thin films. (author)

Preparation of the La0.8Sr0.2MnO3 films on STO and LAO substrates by excimer laser-assisted metal organic deposition using the KrF laser

International Nuclear Information System (INIS)

Tsuchiya, T.; Daoudi, K.; Manabe, T.; Yamaguchi, I.; Kumagai, T.

2007-01-01

La 0.8 Sr 0.2 MnO 3 films were prepared on SrTiO 3 (STO) and LaAlO 3 (LAO) substrates using excimer laser-assisted metal organic deposition (ELAMOD). For the LAO substrate, no epitaxial La 0.8 Sr 0.2 MnO 3 film was obtained by laser irradiation in the fluence range from 60 to 110 mJ/cm 2 with heating at 500 deg. C. On the other hand, an epitaxial La 0.8 Sr 0.2 MnO 3 film on the STO substrate was formed by laser irradiation in the fluence range from 60 to 100 mJ/cm 2 with heating at 500 deg. C. To optimize the electrical properties for an IR sensor, the effects of the laser fluence, the irradiation time and the film thickness on the temperature dependence of the resistance and temperature coefficient of resistance (TCR: defined as 1/R.(dR/dT)) of the LSMO films were investigated. An LSMO film on the STO substrate that showed the maximum TCR of 3.9% at 265 K was obtained by the ELAMOD process using the KrF laser

Contrasting the beam interaction characteristics of selected lasers with a partially stabilized zirconia bio-ceramic

International Nuclear Information System (INIS)

Lawrence, J.

2002-01-01

Differences in the beam interaction characteristics of a CO 2 laser, a Nd:YAG laser, a high power diode laser (HPDL) and an excimer laser with a partially stabilized zirconia bio-ceramic have been studied. A derivative of Beer-Lambert's law was applied and the laser beam absorption lengths of the four lasers were calculated as 33.55x10 -3 cm for the CO 2 laser, 18.22x10 -3 cm for the Nd : YAG laser, 17.17x10 -3 cm for the HPDL and 8.41x10 -6 cm for the excimer laser. It was determined graphically that the fluence threshold values at which significant material removal was effected by the CO 2 laser, the Nd:YAG laser, the HPDL and the excimer laser were 52 J cm -2 , 97 J cm -2 , 115 J cm -2 and 0.48 J cm -2 , respectively. The thermal loading value for the CO 2 laser, the Nd : YAG laser, the HPDL and the excimer laser were calculated as being 1.55 kJ cm -3 , 5.32 kJ cm 3 , 6.69 kJ cm -3 and 57.04 kJ cm -3 , respectively. (author)

Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors

International Nuclear Information System (INIS)

Kwon, Hyuk-Jun; Grigoropoulos, Costas P.; Kim, Sunkook; Jang, Jaewon

2015-01-01

To realize the proper electrical characteristics of field-effect transistors, the quality of the contact and interface must be improved because they can substantially distort the extracted mobility, especially for materials with low densities of states like molybdenum disulfide (MoS 2 ). We show that mechanically flexible MoS 2 thin-film transistors (TFTs) with selectively laser annealed source/drain electrodes achieve enhanced device performance without plastic deformation including higher field-effect mobility (from 19.59 to 45.91 cm 2  V −1  s −1 ) in the linear regime, decreased subthreshold swing, and enhanced current saturation. Furthermore, numerical thermal simulations, measured current-voltage characteristics, and contact-free mobility extracted from the Y-function method suggest that the enhanced performance originated from a decrease in the Schottky barrier effect at the contact and an improvement of the channel interface. These results demonstrate that picosecond laser annealing can be a promising technology for building high performance flexible MoS 2 TFTs in flexible/stretchable circuitry, which should be processed at low temperatures

Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

International Nuclear Information System (INIS)

Gentile, C.A.; Fan, H.M.; Hartfield, J.W.; Hawryluk, R.J.; Hegeler, F.; Heitzenroeder, P.J.; Jun, C.H.; Ku, L.P.; LaMarche, P.H.; Myers, M.C.; Parker, J.J.; Parsells, R.F.; Payen, M.; Raftopoulos, S.; Sethian, J.D.

2002-01-01

The Princeton Plasma Physics Laboratory (PPPL), in collaboration with the Naval Research Laboratory (NRL), is currently investigating various novel materials (single crystal silicon, , and ) for use as electron-beam transmission windows in a KrF excimer laser system. The primary function of the window is to isolate the active medium (excimer gas) from the excitation mechanism (field-emission diodes). Chosen window geometry must accommodate electron energy transfer greater than 80% (750 keV), while maintaining structural integrity during mechanical load (1.3 to 2.0 atm base pressure differential, approximate 0.5 atm cyclic pressure amplitude, 5 Hz repetition rate) and thermal load across the entire hibachi area (approximate 0.9 W · cm superscript ''-2''). In addition, the window must be chemically resistant to attack by fluorine free-radicals (hydrofluoric acid, secondary). In accordance with these structural, functional, and operational parameters, a 22.4 mm square silicon prototype window, coated with 500 nm thin-film silicon nitride (Si 3 N 4 ), has been fabricated. The window consists of 81 square panes with a thickness of 0.019 mm ± 0.001 mm. Stiffened (orthogonal) sections are 0.065 mm in width and 0.500 mm thick (approximate). Appended drawing (Figure 1) depicts the window configuration. Assessment of silicon (and silicon nitride) material properties and CAD modeling and analysis of the window design suggest that silicon may be a viable solution to inherent parameters and constraints

Visual and refractive outcomes of LASIK with the SCHWIND ESIRIS and WaveLight ALLEGRETTO WAVE Eye-q excimer lasers: a prospective, contralateral study.

Science.gov (United States)

Mearza, Ali A; Muhtaseb, Mohammed; Aslanides, Ioannis M

2008-11-01

To compare the safety, efficacy, and predictability of LASIK with the SCHWIND ESIRIS and WaveLight ALLEGRETTO WAVE Eye-Q excimer laser platforms. This prospective study comprised 44 eyes of 22 consecutive patients who were treated with LASIK using the Moria M2 microkeratome. One eye was treated with the SCHWIND ESIRIS laser and the fellow eye treated with the WaveLight ALLEGRETTO WAVE Eye-Q laser. All eyes operated with the SCHWIND ESIRIS were treated with standard aspheric ablation, whereas the eyes operated with the WaveLight ALLEGRETTO WAVE Eye-Q received treatment with three different ablation types according to the common practice at our clinic. Outcome measures were uncorrected visual acuity (UCVA), best spectacle-corrected visual acuity (BSCVA), manifest refraction, and proximity to target refraction at 6-month follow-up. At 6 months postoperative, mean decimal UCVA was 0.96+/-0.22 (range: 0.3 to 1.2) for ESIRIS eyes and 0.98+/-0.17 (range: 0.6 to 1.2) for ALLEGRETTO eyes (P=.57). Mean postoperative spherical equivalent refraction was -0.02+/-0.28 diopters (D) (range: -0.75 to +0.75 D) for ESIRIS eyes and 0.11+/-0.91 D (range: -1.00 to +3.88 D) for ALLEGRETTO eyes (P=.49). Of the ESIRIS eyes, 20/22 (91%) were within +/-1.00 D of target refraction and 20/22 (91%) were within +/-0.50 D of target refraction. Of the ALLEGRETTO eyes, 20/22 (91%) and 19/22 (86%) were within +/-1.00 D and +/-0.50 D, respectively, of target refraction. No patient lost > or =2 lines of BSCVA in either group. No differences were seen in safety and efficacy outcome parameters between the SCHWIND ESIRIS and WaveLight ALLEGRETTO WAVE Eye-Q excimer lasers when used according to a previously established treatment algorithm at our clinic in the treatment of refractive error.

Structural and electrical properties of room temperature pulsed laser deposited and post-annealed thin SrRuO3 films

International Nuclear Information System (INIS)

Gautreau, O.; Harnagea, C.; Normandin, F.; Veres, T.; Pignolet, A.

2007-01-01

Good quality strontium ruthenate (SrRuO 3 ) thin continuous films (15 to 125 nm thick) have been synthesized on silicon (100) substrates by room temperature pulsed laser deposition under vacuum followed by a post-deposition annealing, a route unexplored and yet not reported for SrRuO 3 film growth. The presence of an interfacial Sr 2 SiO 4 layer has been identified for films annealed at high temperature, and the properties of this interface layer as well as the properties of the SrRuO 3 film have been analyzed and characterized as a function of the annealing temperature. The room temperature resistivity of the SrRuO 3 films deposited by laser ablation at room temperature and post-annealed is 2000 μΩ.cm. A critical thickness of 120 nm has been determined above which the influence of the interface layer on the resistivity becomes negligible

Effect of KrF excimer laser irradiation on the surface changes and photoelectric properties of ZnO single crystal

Energy Technology Data Exchange (ETDEWEB)

Zeng, Yong [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China); Zhao, Yan [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Jiang, Yijian, E-mail: yjjiang@bjut.edu.cn [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China)

2016-06-25

In this paper, the effect of KrF pulsed excimer laser irradiation on the structural, surface morphology, photoluminescence and electrical properties of ZnO single crystal was investigated. Compared to the as-grown sample, at an irradiation energy density of 257 mJ/cm{sup 2}, the ZnO single crystal exhibits a series of phenomenon: XRD and Raman results show that the crystallization of ZnO quality change slightly, resistivity is decreased by two orders of magnitude, carrier concentration is increased by one order of magnitude. After laser irradiation, the surface shows some strip lines and no cracks. Formula calculation and simulation results show that the stripes are not caused by surface melting. We speculate that these stripes are caused by the precipitation of ZnO material inside to the surface. Due to the reduction of oxygen vacancies, UV emission has been enhanced and visible emission has been declined after irradiation. After the laser irradiation, the visible light of ZnO surface can be regulated. The experimental results show that KrF laser irradiation could effectively improve the optical and electrical properties of ZnO single crystal, which is important for the application of high performance of emitting optoelectronic devices. - Highlights: • After laser irradiation, the surface shows some strip lines and no cracks. • The visible light of as-irradiated ZnO surface can be regulated to four colors. • The electrical properties of as-irradiated ZnO has been improved greatly.

Theoretical study of annealed proton-exchanged Nd $LiNbO_{3}$ channel waveguide lasers with variational method

CERN Document Server

De Long Zhang; Yuan Guo Xie; Guilan, Ding; Yuming, Cui; Cai He Chen

2001-01-01

The controllable fabrication parameters, including anneal time, initial exchange time, channel width, dependences of TM/sub 00/ mode size, corresponding effective refractive index, effective pump area, and coupling efficiency between pump and laser modes in z-cut annealed proton-exchanged (APE) Nd:LiNbO/sub 3/ channel waveguide lasers were studied by using variational method. The effect of channel width on the surface index increment and the waveguide depth was taken into account. The features of mode size and effective refractive index were summarized, discussed, and compared with previously published experimental results. The effective pump area, which is directly proportional to threshold pump power, increases strongly, slightly, and very slightly with the increase of anneal time, channel width, and initial exchange time, respectively. However, the coupling efficiency, which is directly proportional to slope efficiency, remains constant (around 0.82) no matter what changes made to these parameters. The var...

Fabrication of three-dimensional crystalline silicon-on-carbon nanotube nanocomposite anode by sputtering and laser annealing for high-performance lithium-ion battery

Science.gov (United States)

Kim, Ilwhan; Hyun, Seungmin; Nam, Seunghoon; Lee, Hoo-Jeong; Kang, Chiwon

2018-05-01

In this study, we fabricate a three-dimensional (3D) crystalline Si (c-Si)/carbon nanotube (CNT) nanocomposite anode by sputtering Si on 3D CNTs followed by laser annealing for Si crystallization — a simple, cost-effective route — for advanced Li-ion battery (LIB) applications. We use scanning electron microscopy, X-ray diffraction spectroscopy, and Raman spectroscopy to analyze the samples annealed at different laser energy densities. As a result, we confirm that laser annealing enables Si crystallization without damaging the CNTs. We assemble half-type coin cells for the battery performance test: the 3D c-Si/CNT anode sample demonstrates a specific capacity superior to that of its control counterpart; the cyclic stability is also enhanced significantly.

Study of Nd:YAG laser annealing of electroless Ni-P film on spiegel-iron plate by Taguchi method and grey system theory

Energy Technology Data Exchange (ETDEWEB)

Liu, W.L. [Department of Materials Science and Engineering, National Formosa University, 64, Wunhua Road, Huwei, Yunlin 632, Taiwan (China); Chien, W.T.; Jiang, M.H. [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuehfu Road, Neipu, Pingtung 912, Taiwan (China); Chen, W.J., E-mail: chenwjau@yuntech.edu.t [Graduate School of Materials Science, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan (China)

2010-04-09

An electroless Ni-P film was first deposited on a spiegel-iron plate and then annealed by an Nd:YAG pulsed wave laser. In order to obtain the optimal laser annealing parameters for maximizing the hardness and minimizing the surface roughness of electroless Ni-P films, the Taguchi method and grey system theory were used to analyze the experimental data. The electroless Ni-P film was also characterized by scanning electron microscopy for the morphology, and transmission electron microscopy for the microstructure and crystal structure. The results showed that the hardness and the surface roughness of electroless Ni-P films can be, at the same time, improved to 50.8% and 68%, respectively, by the laser annealing with the optimal parameters.

Study of Nd:YAG laser annealing of electroless Ni-P film on spiegel-iron plate by Taguchi method and grey system theory

International Nuclear Information System (INIS)

Liu, W.L.; Chien, W.T.; Jiang, M.H.; Chen, W.J.

2010-01-01

An electroless Ni-P film was first deposited on a spiegel-iron plate and then annealed by an Nd:YAG pulsed wave laser. In order to obtain the optimal laser annealing parameters for maximizing the hardness and minimizing the surface roughness of electroless Ni-P films, the Taguchi method and grey system theory were used to analyze the experimental data. The electroless Ni-P film was also characterized by scanning electron microscopy for the morphology, and transmission electron microscopy for the microstructure and crystal structure. The results showed that the hardness and the surface roughness of electroless Ni-P films can be, at the same time, improved to 50.8% and 68%, respectively, by the laser annealing with the optimal parameters.

Comparison of Placido disc and Scheimpflug image-derived topography-guided excimer laser surface normalization combined with higher fluence CXL: the Athens Protocol, in progressive keratoconus

Directory of Open Access Journals (Sweden)

Kanellopoulos AJ

2013-07-01

Full Text Available Anastasios John Kanellopoulos,1,2 George Asimellis11Laservision.gr Eye Institute, Athens, Greece; 2New York University School of Medicine, Department of Opthalmology, NY, NY, USABackground: The purpose of this study was to compare the safety and efficacy of two alternative corneal topography data sources used in topography-guided excimer laser normalization, combined with corneal collagen cross-linking in the management of keratoconus using the Athens protocol, ie, a Placido disc imaging device and a Scheimpflug imaging device.Methods: A total of 181 consecutive patients with keratoconus who underwent the Athens protocol between 2008 and 2011 were studied preoperatively and at months 1, 3, 6, and 12 postoperatively for visual acuity, keratometry, and anterior surface corneal irregularity indices. Two groups were formed, depending on the primary source used for topoguided photoablation, ie, group A (Placido disc and group B (Scheimpflug rotating camera. One-year changes in visual acuity, keratometry, and seven anterior surface corneal irregularity indices were studied in each group.Results: Changes in visual acuity, expressed as the difference between postoperative and preoperative corrected distance visual acuity were +0.12 ± 0.20 (range +0.60 to -0.45 for group A and +0.19 ± 0.20 (range +0.75 to -0.30 for group B. In group A, K1 (flat keratometry changed from 45.202 ± 3.782 D to 43.022 ± 3.819 D, indicating a flattening of -2.18 D, and K2 (steep keratometry changed from 48.670 ± 4.066 D to 45.865 ± 4.794 D, indicating a flattening of -2.805 D. In group B, K1 (flat keratometry changed from 46.213 ± 4.082 D to 43.190 ± 4.398 D, indicating a flattening of -3.023 D, and K2 (steep keratometry changed from 50.774 ± 5.210 D to 46.380 ± 5.006 D, indicating a flattening of -4.394 D. For group A, the index of surface variance decreased to -5.07% and the index of height decentration to -26.81%. In group B, the index of surface variance

Excimer Laser Phototherapeutic Keratectomy for the Treatment of Clinically Presumed Fungal Keratitis

Directory of Open Access Journals (Sweden)

Liang-Mao Li

2014-01-01

Full Text Available This retrospective study was to evaluate treatment outcomes of excimer laser phototherapeutic keratectomy (PTK for clinically presumed fungal keratitis. Forty-seven eyes of 47 consecutive patients underwent manual superficial debridement and PTK. All corneal lesions were located in the anterior stroma and were resistant to medication therapy for at least one week. Data were collected by a retrospective chart review with at least six months of follow-up data available. After PTK, infected corneal lesions were completely removed and the clinical symptoms resolved in 41 cases (87.2%. The mean ablation depth was 114.39±45.51 μm and diameter of ablation was 4.06±1.07 mm. The mean time for healing of the epithelial defect was 8.8±5.6 days. Thirty-four eyes (82.9% showed an improvement in best spectacle-corrected visual acuity of two or more lines. PTK complications included mild to moderate corneal haze, hyperopic shift, irregular astigmatism, and thinning cornea. Six eyes (12.8% still showed progressed infection, and conjunctival flap covering, amniotic membrane transplantation, or penetrating keratoplasty were given. PTK is a valuable therapeutic alternative for superficial infectious keratitis. It can effectively eradicate lesions, hasten reepithelialization, and restore and preserve useful visual function. However, the selection of surgery candidates should be conducted carefully.

High mobility amorphous InGaZnO{sub 4} thin film transistors formed by CO{sub 2} laser spike annealing

Energy Technology Data Exchange (ETDEWEB)

Chung, Chen-Yang; Zhu, Bin; Ast, Dieter G.; Thompson, Michael O. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Greene, Raymond G. [Corning Incorporated, Corning, New York 14831 (United States)

2015-03-23

Amorphous InGaZnO{sub 4} (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO{sub 2} laser. For peak annealing temperatures near 430 °C and a 1 ms dwell, TFTs exhibit saturation field-effect mobilities above 70 cm{sup 2}/V-s (V{sub on} ∼ −3 V), a value over 4 times higher than furnace-annealed control samples (∼16 cm{sup 2}/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

Laser plasmas as x-ray sources for lithographic imaging of submicron structures

International Nuclear Information System (INIS)

Bijkerk, F.; van Dorssen, G.E.; van der Wiel, M.J.

1988-01-01

Laser radiation can be used efficiently to generate x-rays for lithographic imaging of submicron patterns, e.g., for VLSI device fabrication. Due to their short wavelength and high average power, excimer lasers show much potential for this application. Results are presented of scaling studies for high repetition rate excimer laser application, using the frequency doubled output of a low repetition rate Nd:YAG/Glass laser. Spectral and spatial characteristics of x-ray emission of the laser plasma are shown. The power density in the laser focus was 3 x 10 12 W/cm 2 . With this source Si x-ray masks with submicron Au absorber profiles are imaged into high sensitivity x-ray photoresist. For the exposures 80 laser shots sufficed to yield high quality submicron structures. Extrapolation of the results to a high power excimer laser reduces the exposure time of the photoresists to several seconds, enabling a wafer throughput at an industrial level

Studies of free radicals by ultraviolet excimer laser photolysis. Progress report, 1 April 1980-1 November 1980

International Nuclear Information System (INIS)

Leone, S.R.

1980-01-01

An experimental technique has been developed to produce and directly study vibrationally excited free radicals. Pulses of light from an ultraviolet excimer laser are used to photodissociate small molecules to generate free radicals with high internal excitation. The radicals are detected directly by the technique of time and wavelength-resolved infrared emission spectroscopy using a background-limited copper-doped germanium infrared detector. New results have been obtained on the CH 3 radical. A complete spectrum of the CH 3 umbrella band reveals for the first time accurate positions of the vibrational progression in this band. Photofragmentation of (CH 3 ) 2 Hg has yielded detailed information on the vibrational distribution, rotational temperature, and deactivation rates of the CH 3 stretch mode. A technique to study chemical chain reactions using low power, radical-specific, laser initiation and realtime kinetics detection had previously been demonstrated. The results provide a general method to study a large number of chain reaction combustion systems in greater detail. New results on more complex chain reactions such as Cl 2 /butane reveal that highly detailed infrared emission spectra of various products of the chain and their time evolution is possible. Partitioning of energy between vibrational degrees of freedom and translational heating is obtained over the course of the combustion

Characterization of the excimers of poly(N-vinylcarbazole) using TRANES

International Nuclear Information System (INIS)

Ghosh, Debanjana; Chattopadhyay, Nitin

2011-01-01

Time-resolved emission spectra (TRES) and time-resolved area normalized emission spectra (TRANES) are exploited to characterize the excimers of poly(N-vinylcarbazole) (PNVC) in toluene and water. The time-resolved study together with the steady state measurements, decipher the fluorescence of the system containing pendant carbazole moieties in the polymer backbone unambiguously. Isoemissive point in the TRANES establishes that there are only two excimers of PNVC, the partially overlapped excimer emitting at high energy and the sandwich type excimer emitting at lower energy, and they are formed exclusively in the photoexcited state. The study substantiates an equilibrium between the two excimers. - Graphical Abstract: Highlights: → TRES and TRANES are exploited to decipher the emission of PNVC in toluene and water. → The emission comes from two excimers: partially overlapped and sandwich type. → TRANES shows single isoemissive point establishing presence of two excimers only. → Sandwich excimer is formed from the partially overlapped one in the excited state. → Existence of an equilibrium is established.

New laser research and development

International Nuclear Information System (INIS)

Anon.

1976-01-01

New types of lasers must be developed to provide the desired energy per pulse, pulse length, pulse shape, wavelength, and efficiency for laser-fusion applications. This advanced laser research has focused on rare-gas oxides and on Hg 2 excimers

Diode laser probe of CO2 vibrational excitation produced by collisions with hot deuterium atoms from the 193 nm excimer laser photolysis D2S

International Nuclear Information System (INIS)

O'Neill, J.A.; Cai, J.Y.; Flynn, G.W.; Weston, R.E. Jr.

1986-01-01

The 193 nm excimer laser photolysis of D 2 S in D 2 S/CO 2 mixtures produces fast deuterium atoms (E/sub TR/approx.2.2 eV) which vibrationally excite CO 2 molecules via inelastic translation--vibration/rotation (T--V/R) energy exchange processes. A high resolution (10 -3 cm -1 ) cw diode laser probe was used to monitor the excitation of ν 3 (antisymmetric stretch) and ν 2 (bend) vibrations in CO 2 . The present results are compared with previous experiments involving hot hydrogen atom excitation of CO 2 in H 2 S/CO 2 mixtures as well as with theoretical calculations of the excitation probability. The probability for excitation of a ν 3 quantum in CO 2 is about 1%--2% per gas kinetic D/CO 2 collision. Bending (ν 2 ) quanta are produced about eight times more efficiently than antisymmetric stretching (ν 3 ) quanta. The thermalization rate for cooling hot D atoms below the threshold for production of a ν 3 vibrational quantum corresponds to less than 2 D*/D 2 S collisions or 15 D*/CO 2 collisions

Excimer laser ablation of the cornea

Science.gov (United States)

Pettit, George H.; Ediger, Marwood N.; Weiblinger, Richard P.

1995-03-01

Pulsed ultraviolet laser ablation is being extensively investigated clinically to reshape the optical surface of the eye and correct vision defects. Current knowledge of the laser/tissue interaction and the present state of the clinical evaluation are reviewed. In addition, the principal findings of internal Food and Drug Administration research are described in some detail, including a risk assessment of the laser-induced-fluorescence and measurement of the nonlinear optical properties of cornea during the intense UV irradiation. Finally, a survey is presented of the alternative laser technologies being explored for this ophthalmic application.

Synthesis of Cu/Cu2O nanoparticles by laser ablation in deionized water and their annealing transformation into CuO nanoparticles

KAUST Repository

Gondal, M. A.; Qahtan, Talal F.; Dastageer, Mohamed Abdulkader; Maganda, Yasin W.; Anjum, Dalaver H.

2013-01-01

Nano-structured Cupric Oxide (CuO) has been synthesized using pulsed laser ablation of pure copper in water using Q-switched pulsed laser beam of 532 nm wavelength and, 5 nanosecond pulse duration and laser pulse energy of 100 mJ/pulse. In the initial unannealed colloidal suspension, the nanoparticles of Copper (Cu) and Cuprious oxide (Cu2O) were identified. Further the suspension was dried and annealed at different temperatures and we noticed the product (Cu/Cu2O) was converted predominantly into CuO at annealing temperature of 300 'C for 3 hours. As the annealing temperature was raised from 300 to 900 'C, the grain sizes of CuO reduced to the range of 9 to 26 nm. The structure and the morphology of the prepared samples were investigated using X-ray diffraction and Transmission Electron Microscope. Photoluminescence and UV absorption spectrometrystudies revealed that the band gap and other optical properties of nano-structured CuO were changed due to post annealing. Fourier transform spectrometry also confirmed the transformation of Cu/Cu2O into CuO. Copyright © 2013 American Scientific Publishers All rights reserved.

Synthesis of Cu/Cu2O nanoparticles by laser ablation in deionized water and their annealing transformation into CuO nanoparticles

KAUST Repository

Gondal, M. A.

2013-08-01

Nano-structured Cupric Oxide (CuO) has been synthesized using pulsed laser ablation of pure copper in water using Q-switched pulsed laser beam of 532 nm wavelength and, 5 nanosecond pulse duration and laser pulse energy of 100 mJ/pulse. In the initial unannealed colloidal suspension, the nanoparticles of Copper (Cu) and Cuprious oxide (Cu2O) were identified. Further the suspension was dried and annealed at different temperatures and we noticed the product (Cu/Cu2O) was converted predominantly into CuO at annealing temperature of 300 \\'C for 3 hours. As the annealing temperature was raised from 300 to 900 \\'C, the grain sizes of CuO reduced to the range of 9 to 26 nm. The structure and the morphology of the prepared samples were investigated using X-ray diffraction and Transmission Electron Microscope. Photoluminescence and UV absorption spectrometrystudies revealed that the band gap and other optical properties of nano-structured CuO were changed due to post annealing. Fourier transform spectrometry also confirmed the transformation of Cu/Cu2O into CuO. Copyright © 2013 American Scientific Publishers All rights reserved.

Effect of annealing on structural and optical properties of Cu_2ZnSnS_4 thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Surgina, G.D.; Nevolin, V.N.; Sipaylo, I.P.; Teterin, P.E.; Medvedeva, S.S.; Lebedinsky, Yu.Yu.; Zenkevich, A.V.

2015-01-01

In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu_2ZnSnS_4 (CZTS) thin films grown by reactive Pulsed Laser Deposition in H_2S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N_2 at the optimized conditions. - Highlights: • Cu_2ZnSnS_4 (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H_2S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N_2 effectively inhibits the formation of Sn_xS secondary phases.

Clinical results of excimer laser photorefractive keratectomy: a multicenter study of 265 eyes.

Science.gov (United States)

Aron-Rosa, D S; Colin, J; Aron, B; Burin, N; Cochener, B; Febraro, J L; Gallinaro, C; Ganem, S; Valdes, R

1995-11-01

Efficacy, predictability, and safety of excimer laser photorefractive keratectomy were evaluated at centers in Paris and Brest, France. Photoablation was performed with the VISX laser on 265 eyes (151 at the Paris center and 114 at the Brest center). The eyes were clinically and statistically evaluated over a six month follow-up. Initial myopia ranged from -0.7 to -19.4 diopters (D) (mean spherical equivalent [SE] -5.9 D) in the Paris center and from -0.9 to -14.5 D (SE -4.5 D) in the Brest center. At both centers, the mean uncorrected visual acuity was worse than 20/200; over 90% of cases in each center had a best uncorrected visual acuity of 20/100 or worse. Results are reported globally and for subgroups of myopia: Group A, SE better than or equal to -3.0 D; Group B, SE worse than -3.0 D and better than or equal to -7.0 D; Group C, SE worse than -7.0 D. Uncorrected visual acuity was significantly improved in the patients followed for six months; 64% of Paris cases and 62% of Brest cases obtained an uncorrected visual acuity of 20/40 or better. Predictability of the treatment was good; 67% of Paris eyes and 74% of Brest eyes were less than 1.0 D from the intended correction after six months. The data suggest that the initial myopia affected the efficacy and predictability of the treatment; results in the mild to moderate myopia eyes were significantly better than results in the severe myopia eyes. One case of visual acuity regression (less than one line) was observed in the two groups. This was associated with corneal haze of moderate intensity.

Fast wettability transition from hydrophilic to superhydrophobic laser-textured stainless steel surfaces under low-temperature annealing

Science.gov (United States)

Ngo, Chi-Vinh; Chun, Doo-Man

2017-07-01

Recently, the fabrication of superhydrophobic metallic surfaces by means of pulsed laser texturing has been developed. After laser texturing, samples are typically chemically coated or aged in ambient air for a relatively long time of several weeks to achieve superhydrophobicity. To accelerate the wettability transition from hydrophilicity to superhydrophobicity without the use of additional chemical treatment, a simple annealing post process has been developed. In the present work, grid patterns were first fabricated on stainless steel by a nanosecond pulsed laser, then an additional low-temperature annealing post process at 100 °C was applied. The effect of 100-500 μm step size of the textured grid upon the wettability transition time was also investigated. The proposed post process reduced the transition time from a couple of months to within several hours. All samples showed superhydrophobicity with contact angles greater than 160° and sliding angles smaller than 10° except samples with 500 μm step size, and could be applied in several potential applications such as self-cleaning and control of water adhesion.

Local annealing of shape memory alloys using laser scanning and computer vision

Science.gov (United States)

Hafez, Moustapha; Bellouard, Yves; Sidler, Thomas C.; Clavel, Reymond; Salathe, Rene-Paul

2000-11-01

A complete set-up for local annealing of Shape Memory Alloys (SMA) is proposed. Such alloys, when plastically deformed at a given low temperature, have the ability to recover a previously memorized shape simply by heating up to a higher temperature. They find more and more applications in the fields of robotics and micro engineering. There is a tremendous advantage in using local annealing because this process can produce monolithic parts, which have different mechanical behavior at different location of the same body. Using this approach, it is possible to integrate all the functionality of a device within one piece of material. The set-up is based on a 2W-laser diode emitting at 805nm and a scanner head. The laser beam is coupled into an optical fiber of 60(mu) in diameter. The fiber output is focused on the SMA work-piece using a relay lens system with a 1:1 magnification, resulting in a spot diameter of 60(mu) . An imaging system is used to control the position of the laser spot on the sample. In order to displace the spot on the surface a tip/tilt laser scanner is used. The scanner is positioned in a pre-objective configuration and allows a scan field size of more than 10 x 10 mm2. A graphical user interface of the scan field allows the user to quickly set up marks and alter their placement and power density. This is achieved by computer controlling X and Y positions of the scanner as well as the laser diode power. A SMA micro-gripper with a surface area less than 1 mm2 and an opening of the jaws of 200(mu) has been realized using this set-up. It is electrically actuated and a controlled force of 16mN can be applied to hold and release small objects such as graded index micro-lenses at a cycle time of typically 1s.

Fiscal 2000 survey report. Research on laser-aided photolysis of environmental pollutant in liquid phase system; 2000 nendo ekisokei ni okeru kankyo osen busshitsu no laser hikari bunkai gijutsu ni kansuru kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Experiments were conducted on laser-aided decomposition and removal of chemical substances in liquid phase systems on the assumption that there existed chemical pollutants in wastewater or water after washing burned ash. The aim of the research was to split carbon-chlorine bonds and break benzene rings, the two being the cause of harmfulness, and experiments were conducted using chlorophenol. The photolytic lasers were ArF excimer laser and KrF excimer laser. It was found that the reduction rate of chlorophenol in a water solution under excimer laser irradiation was 1.7 times higher under KrF laser than under ArF laser. For mediums other than water, isopropanol was used, more convenient than chlorophenol in separating organic pollutants from burned ash and the like. In this case, organochlorine compounds were generated at the beginning, but they disappeared when irradiation was prolonged. It was demonstrated that the laser-aided environmental cleaning technology would find a very wide scope of application as an effective photolytic means. (NEDO)

Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

Science.gov (United States)

Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

2015-03-01

In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing

Science.gov (United States)

2015-02-15

of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing 5a. CONTRACT NUMBER FA2386-11-1-4077 5b. GRANT NUMBER Grant AOARD...MOSFET Using Defect-Free Gate Recess and Laser Annealing ”. Under the USAF-Taiwan research program, the partner institution was National Chiao Tung...CHAPTER 1: In Situ Atomic Layer Deposition Half Cycle Study of Al2O3 Growth on AlGaN/GaN - Initial and wet chemical treated AlGaN surfaces were

ArF excimer laser modulation of TNF-alpha and gelatinase B in NIH 3T3 cells; Modulation de l`expression du TNF-alpha et de la gelatinase B, apres irradiation de fibroblastes NIH 3T3 par un laser a excimeres a 193 NM

Energy Technology Data Exchange (ETDEWEB)

Naudy-Vives, C.; Courant, D.; Perot, J.C.; Garcia, J.; Fretier, P.; Court, L.; Dormont, D.

1995-12-31

The effects on TNF-alpha and gelatinase B activity in mammalian cells induced by 193 nm argon fluoride excimer laser have been investigated. The data show that a secretion of 92 kDa type IV collagenase and TNF-alpha were increased in cell culture supernatants. Moreover, the 193 nm laser radiation produces a decrease of cell proliferation and an increase of cell activation 8 hours after irradiation. The total protein amount increases with the delivered dose. Same, but less effects were obtained after exposure to a conventional UV lamp at 254 nm. (author). 8 refs.

Laser materials processing with diode lasers

OpenAIRE

Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

1996-01-01

Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

Microstructure and Property Modifications of Cold Rolled IF Steel by Local Laser Annealing

Science.gov (United States)

Hallberg, Håkan; Adamski, Frédéric; Baïz, Sarah; Castelnau, Olivier

2017-10-01

Laser annealing experiments are performed on cold rolled IF steel whereby highly localized microstructure and property modification are achieved. The microstructure is seen to develop by strongly heterogeneous recrystallization to provide steep gradients, across the submillimeter scale, of grain size and crystallographic texture. Hardness mapping by microindentation is used to reveal the corresponding gradients in macroscopic properties. A 2D level set model of the microstructure development is established as a tool to further optimize the method and to investigate, for example, the development of grain size variations due to the strong and transient thermal gradient. Particular focus is given to the evolution of the beneficial γ-fiber texture during laser annealing. The simulations indicate that the influence of selective growth based on anisotropic grain boundary properties only has a minor effect on texture evolution compared to heterogeneous stored energy, temperature variations, and nucleation conditions. It is also shown that although the α-fiber has an initial frequency advantage, the higher probability of γ-nucleation, in combination with a higher stored energy driving force in this fiber, promotes a stronger presence of the γ-fiber as also observed in experiments.

Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

Science.gov (United States)

Boninelli, S.; Milazzo, R.; Carles, R.; Houdellier, F.; Duffy, R.; Huet, K.; La Magna, A.; Napolitani, E.; Cristiano, F.

2018-05-01

Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at low energy densities, the P electrical activation was poor while the dopant distribution was mainly localized in the polycrystalline Ge resulting from the anneal. Conversely, full dopant activation (up to 1 × 1020 cm-3) in a perfectly recrystallized material was observed after annealing at higher energy densities. Measurements of lattice parameters performed on the fully activated structures show that P doping results in a lattice expansion, with a perpendicular lattice strain per atom βPs = +0.7 ± 0.1 Å3. This clearly indicates that, despite the small atomic radius of P compared to Ge, the "electronic contribution" to the lattice parameter modification (due to the increased hydrostatic deformation potential in the conduction band of P doped Ge) is larger than the "size mismatch contribution" associated with the atomic radii. Such behavior, predicted by theory, is observed experimentally for the first time, thanks to the high sensitivity of the measurement techniques used in this work.

Comparación de la medición del grosor corneal central medido con el paquímetro incluido en el Wavelight® Ex500 Excimer Laser y el tomógrafo de cámara de Scheimpflug Pentacam® en sujetos sanos

Directory of Open Access Journals (Sweden)

Manuel Garza León

2017-01-01

Conclusiones: Nuestros resultados demuestran que el paquímetro incluido en el Wavelight® Ex500 Excimer Laser es una buena alternativa para la medición del grosor corneal central al Pentacam® en pacientes sanos.

Excimer laser development for fusion

International Nuclear Information System (INIS)

Giovanielli, D.

1985-01-01

The future utility of inertial confinement fusion requires a new driver. Successful experiments coupling laser energy to targets, and our understanding of fuel capsule behavior strongly suggest that a laboratory thermonuclear source is attainable and power production may be considered if a suitable driver with high efficiency, high repetition rate, and most importantly, low capital cost, can be identified. No adequate driver exists today; however, the krypton fluoride laser holds great promise. By the end of this decade, driver development can be brought to the point that a technically justifiable choice can be made for the future direction of ICF

Influence of spatial and temporal spot distribution on the ocular surface quality and maximum ablation depth after photoablation with a 1050 Hz excimer laser system.

Science.gov (United States)

Mrochen, Michael; Schelling, Urs; Wuellner, Christian; Donitzky, Christof

2009-02-01

To investigate the effect of temporal and spatial distributions of laser spots (scan sequences) on the corneal surface quality after ablation and the maximum ablation of a given refractive correction after photoablation with a high-repetition-rate scanning-spot laser. IROC AG, Zurich, Switzerland, and WaveLight AG, Erlangen, Germany. Bovine corneas and poly(methyl methacrylate) (PMMA) plates were photoablated using a 1050 Hz excimer laser prototype for corneal laser surgery. Four temporal and spatial spot distributions (scan sequences) with different temporal overlapping factors were created for 3 myopic, 3 hyperopic, and 3 phototherapeutic keratectomy ablation profiles. Surface quality and maximum ablation depth were measured using a surface profiling system. The surface quality factor increased (rough surfaces) as the amount of temporal overlapping in the scan sequence and the amount of correction increased. The rise in surface quality factor was less for bovine corneas than for PMMA. The scan sequence might cause systematic substructures at the surface of the ablated material depending on the overlapping factor. The maximum ablation varied within the scan sequence. The temporal and spatial distribution of the laser spots (scan sequence) during a corneal laser procedure affected the surface quality and maximum ablation depth of the ablation profile. Corneal laser surgery could theoretically benefit from smaller spot sizes and higher repetition rates. The temporal and spatial spot distributions are relevant to achieving these aims.

Ablation of polymers by ultraviolet pulsed laser

International Nuclear Information System (INIS)

Brezini, A.; Benharrats, N.

1993-08-01

The surface modifications of different polymers treated by far UV-Excimer laser (λ = 193mn, 248, 308nm) are analysed by X-Ray Photoelectrons Spectroscopy. The main feature observed depends strongly on the absorption coefficients. For the high absorbing polymers such (PVC, PS, PI,...) the mechanism of the UV-Excimer Laser interaction appears to be governed by an ablative photodecomposition process (APD) with an APD threshold. In the other limit, i.e. low absorbing polymer the interaction leads to a photothermal process. (author). 51 refs, 24 figs, 7 tabs

193nm high power lasers for the wide bandgap material processing

Science.gov (United States)

Fujimoto, Junichi; Kobayashi, Masakazu; Kakizaki, Koji; Oizumi, Hiroaki; Mimura, Toshio; Matsunaga, Takashi; Mizoguchi, Hakaru

2017-02-01

Recently infrared laser has faced resolution limit of finer micromachining requirement on especially semiconductor packaging like Fan-Out Wafer Level Package (FO-WLP) and Through Glass Via hole (TGV) which are hard to process with less defect. In this study, we investigated ablation rate with deep ultra violet excimer laser to explore its possibilities of micromachining on organic and glass interposers. These results were observed with a laser microscopy and Scanning Electron Microscope (SEM). As the ablation rates of both materials were quite affordable value, excimer laser is expected to be put in practical use for mass production.

CEMS Investigations of Fe-Silicide Phases Formed by the Method of Concentration Controlled Phase Selection

Energy Technology Data Exchange (ETDEWEB)

Moodley, M. K.; Bharuth-Ram, K. [University of Durban-Westville, Physics Department (South Africa); Waal, H. de; Pretorius, R. [University of Stellenbosch, Physics Department (South Africa)

2002-03-15

Conversion electron Moessbauer spectroscopy (CEMS) measurements have been made on Fe-silicide samples formed using the method of concentration controlled phase selection. To prepare the samples a 10 nm layer of Fe{sub 30}M{sub 70} (M=Cr, Ni) was evaporated onto Si(100) surfaces, followed by evaporation of a 60 nm Fe layer. Diffusion of the Fe into the Si substrate and the formation of different Fe-Si phases was achieved by subjecting the evaporated samples to a series of heating stages, which consisted of (a) a 10 min anneal at 800 deg. C plus etch of the residual surface layer, (b) a further 3 hr anneal at 800 deg. C, (c) a 60 mJ excimer laser anneal to an energy density of 0.8 J/cm{sup 2}, and (d) a final 3 hr anneal at 800 deg. C. CEMS measurements were used to track the Fe-silicide phases formed. The CEMS spectra consisted of doublets which, based on established hyperfine parameters, could be assigned to {alpha}- or {beta}-FeSi{sub 2} or cubic FeSi. The spectra showed that {beta}-FeSi{sub 2} had formed already at the first annealing stage. Excimer laser annealing resulted in the formation of a phase with hyperfine parameters consistent with those of {alpha}-FeSi{sub 2}. A further 3 hr anneal at 800 deg. C resulted in complete reversal to the semiconducting {beta}-FeSi{sub 2} phase.

Effect of annealing on structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Surgina, G.D., E-mail: silvereye@bk.ru [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation); Nevolin, V.N. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Sipaylo, I.P.; Teterin, P.E. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Medvedeva, S.S. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Lebedinsky, Yu.Yu.; Zenkevich, A.V. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

2015-11-02

In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by reactive Pulsed Laser Deposition in H{sub 2}S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N{sub 2} at the optimized conditions. - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H{sub 2}S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N{sub 2} effectively inhibits the formation of Sn{sub x}S secondary phases.

Laser-driven hydrothermal process studied with excimer laser pulses

Science.gov (United States)

Mariella, Raymond; Rubenchik, Alexander; Fong, Erika; Norton, Mary; Hollingsworth, William; Clarkson, James; Johnsen, Howard; Osborn, David L.

2017-08-01

Previously, we discovered [Mariella et al., J. Appl. Phys. 114, 014904 (2013)] that modest-fluence/modest-intensity 351-nm laser pulses, with insufficient fluence/intensity to ablate rock, mineral, or concrete samples via surface vaporization, still removed the surface material from water-submerged target samples with confinement of the removed material, and then dispersed at least some of the removed material into the water as a long-lived suspension of nanoparticles. We called this new process, which appears to include the generation of larger colorless particles, "laser-driven hydrothermal processing" (LDHP) [Mariella et al., J. Appl. Phys. 114, 014904 (2013)]. We, now, report that we have studied this process using 248-nm and 193-nm laser light on submerged concrete, quartzite, and obsidian, and, even though light at these wavelengths is more strongly absorbed than at 351 nm, we found that the overall efficiency of LDHP, in terms of the mass of the target removed per Joule of laser-pulse energy, is lower with 248-nm and 193-nm laser pulses than with 351-nm laser pulses. Given that stronger absorption creates higher peak surface temperatures for comparable laser fluence and intensity, it was surprising to observe reduced efficiencies for material removal. We also measured the nascent particle-size distributions that LDHP creates in the submerging water and found that they do not display the long tail towards larger particle sizes that we had observed when there had been a multi-week delay between experiments and the date of measuring the size distributions. This is consistent with transient dissolution of the solid surface, followed by diffusion-limited kinetics of nucleation and growth of particles from the resulting thin layer of supersaturated solution at the sample surface.

Evaluation of the performance of small diode pumped UV solid state (DPSS) Nd:YAG lasers as new radiation sources for atmospheric pressure laser ionization mass spectrometry (APLI-MS).

Science.gov (United States)

Kersten, Hendrik; Lorenz, Matthias; Brockmann, Klaus J; Benter, Thorsten

2011-06-01

The performance of a KrF* bench top excimer laser and a compact diode pumped UV solid state (DPSS) Nd:YAG laser as photo-ionizing source in LC-APLI MS is compared. The commonly applied bench-top excimer laser, operating at 248 nm, provides power densities of the order of low MW/cm(2) on an illuminated area of 0.5 cm(2) (8 mJ/pulse, 5 ns pulse duration, beam waist area 0.5 cm(2), 3 MW/cm(2)). The DPSS laser, operating at 266 nm, provides higher power densities, however, on a two orders of magnitude smaller illuminated area (60 μJ/pulse, 1 ns pulse duration, beam waist area 2 × 10(-3) cm(2), 30 MW/cm(2)). In a common LC-APLI MS setup with direct infusion of a 10 nM pyrene solution, the DPSS laser yields a significantly smaller ion signal (0.9%) and signal to noise ratio (1.4%) compared with the excimer laser. With respect to the determined low detection limits (LODs) for PAHs of 0.1 fmol using an excimer laser, LODs in DPSS laser LC-APLI MS in the low pmol regime are expected. The advantages of the DPSS laser with respect to applicability (size, cost, simplicity) may render this light source the preferred one for APLI applications not focusing on ultimately high sensitivities. Furthermore, the impact of adjustable ion source parameters on the performance of both laser systems is discussed in terms of the spatial sensitivity distribution described by the distribution of ion acceptance (DIA) measurements. Perspectives concerning the impact on future APLI-MS applications are given.

The effect of laser irradiation on electrical and structural properties of ZnO thin films

Directory of Open Access Journals (Sweden)

P Kameli

2013-03-01

Full Text Available  In this paper, ZnO thin film was prepared by sol-gel process on glass substrates. The deposited films were dried at 100 and 240 ˚C and then annealed at 300, 400 and 500 ˚C. The two-probe measurement showed that resistance of as-prepared films is very high. The KrF excimer (λ=248 nm laser irradiation with 1000 pulses, frequency of 1 Hz and 90 mJ/cm2 energy on surface of film resulted in the reduction of the films electrical resistance. X-ray diffraction (XRD patterns confirmed the improved hexagonal wurtzite structure of film, and AFM and FE-SEM analyses showed regular and spherical grain was formed on the surface. The particle size was increased from ~10 to ~30 nm after leaser irradiation. Generally, it was showed that electrical, structural and morphological properties of films improve considerably by laser irradiation.

Transformation of medical grade silicone rubber under Nd:YAG and excimer laser irradiation: First step towards a new miniaturized nerve electrode fabrication process

International Nuclear Information System (INIS)

Dupas-Bruzek, C.; Robbe, O.; Addad, A.; Turrell, S.; Derozier, D.

2009-01-01

Medical grade silicone rubber, poly-dimethylsiloxane (PDMS) is a widely used biomaterial. Like for many polymers, its surface can be modified in order to change one or several of its properties which further allow this surface to be functionalized. Laser-induced surface modification of PDMS under ambient conditions is an easy and powerful method for the surface modification of PDMS without altering its bulk properties. In particular, we profit from both UV laser inducing surface modification and of UV laser micromachining to develop a first part of a new process aiming at increasing the number of contacts and tracks within the same electrode surface to improve the nerve selectivity of implantable self sizing spiral cuff electrodes. The second and last part of the process is to further immerse the engraved electrode in an autocatalytic Pt bath leading in a selective Pt metallization of the laser irradiated tracks and contacts and thus to a functionalized PDMS surface. In the present work, we describe the different physical and chemical transformations of a medical grade PDMS as a function of the UV laser and of the irradiation conditions used. We show that the ablation depths, chemical composition, structure and morphology vary with (i) the laser wavelength (using an excimer laser at 248 nm and a frequency-quadrupled Nd:YAG laser at 266 nm), (ii) the conditions of irradiation and (iii) the pulse duration. These different modified properties are expected to have a strong influence on the nucleation and growth rates of platinum which govern the adhesion and the thickness of the Pt layer on the electrodes and thus the DC resistance of tracks.

The influences of anneal temperature and cooling rate on microstructure and tensile properties of laser deposited Ti–4Al–1.5Mn titanium alloy

International Nuclear Information System (INIS)

Tian, X.J.; Zhang, S.Q.; Wang, H.M.

2014-01-01

Highlights: • We study the heat treatment parameters of laser deposited near-α titanium alloy. • Microstructure/tensile property relationships are demonstrated and discussed. • Higher cooling rate leads to finer microstructure and higher strength. • Higher anneal temperature promotes strength without ductility obviously decreased. - Abstract: As a metal near-net-shape manufacturing technology, direct laser fabrication has a great potential to reduce costs and delivery time and received an intense attention in the field of titanium alloy aerospace components fabrications. However, the laser deposited titanium alloys usually have equivalent strength and lower ductility compared to the wrought counterparts due to their lamellar microstructure. To investigate the responses of laser deposit titanium alloy Ti–4Al–1.5Mn to anneal parameters, various anneal temperatures and cooling rates were applied in this study. Microstructures were examined by Optical Microscope (OM) and Scanning Electron Microscope (SEM). Microhardness test and room temperature tensile tests were employed to evaluate the tensile properties of the as-deposited and annealed specimens. Results show that air cooling from the α + β phase region generates a microstructure composed of coarse primary α plates and fine lamellar transformed β, while water quenching produces similar but much finer microstructure. Moreover, higher cooling rate generates more area fraction of fine transformed β. With increasing anneal temperature, the ultimate tensile strength and yield strength increase for both cooling methods. Moreover, higher cooling rate leads to higher strength as expected. It is worth noting that both the strength and ductility of the laser deposited alloy improved by water quenched from the α + β duplex phase region. The improved tensile properties were mainly owing to the fine lamellar transformed β in the special bimodal microstructure

Advances in solid state laser technology for space and medical applications

Science.gov (United States)

Byvik, C. E.; Buoncristiani, A. M.

1988-01-01

Recent developments in laser technology and their potential for medical applications are discussed. Gas discharge lasers, dye lasers, excimer lasers, Nd:YAG lasers, HF and DF lasers, and other commonly used lasers are briefly addressed. Emerging laser technology is examined, including diode-pumped lasers and other solid state lasers.

Rapid fabrication of transparent conductive films with controllable sheet resistance on glass substrates by laser annealing of diamond-like carbon films

International Nuclear Information System (INIS)

Lee, Keunhee; Ki, Hyungson

2016-01-01

We report a laser-based method for directly fabricating large-area, transparent conductive films with customizable electrical resistance on glass. In this method, a diamond-like carbon (DLC) film is deposited first on a glass substrate by pulsed laser deposition, which is then annealed in a helium shielding environment by a 2 kW continuous-wave fiber laser with a wavelength of 1070 nm, which is transparent to glass but is absorbed by DLC to transform the amorphous carbons to graphene. When a 510 nm thick film was annealed at a scanning speed of 1 m/s by a 200 μm top-hat laser beam, the sp 3 fraction was decreased from 43.1% to 8.1% after the annealing process, and the transformed film showed a transparency of ∼80% (at 550 nm) and a sheet resistance of ∼2050 Ω/sq. We also showed that sheet resistance and transparency can be controlled by changing processing parameters. To show the scalability of the method, a 15 mm wide line beam was used to produce a 15 mm × 15 mm film. This method is simple, fully scalable, transfer-free and catalyst-free, and we believe that the fabricated films can have many applications with further research, such as transparent heating films, electromagnetic shielding films, and transparent electrodes.

Nonlocal laser annealing to improve thermal contacts between multi-layer graphene and metals

International Nuclear Information System (INIS)

Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Moshkalev, Stanislav A; Baranov, Alexander V

2013-01-01

The accuracy of thermal conductivity measurements by the micro-Raman technique for suspended multi-layer graphene flakes has been shown to depend critically on the quality of the thermal contacts between the flakes and the metal electrodes used as the heat sink. The quality of the contacts can be improved by nonlocal laser annealing at increased power. The improvement of the thermal contacts to initially rough metal electrodes is attributed to local melting of the metal surface under laser heating, and increased area of real metal–graphene contact. Improvement of the thermal contacts between multi-layer graphene and a silicon oxide surface was also observed, with more efficient heat transfer from graphene as compared with the graphene–metal case. (paper)

Mass-Selective Laser Photoionization.

Science.gov (United States)

Smalley, R. E.

1982-01-01

Discusses the nature and applications of mass-selective laser photoionization. The ionization can be done with a single intense laser pulse lasting a few billionths of a second with no molecular fragmentation. Applications focus on: (1) benzene clusters, excimers, and exciplexes; (2) metal clusters; and (3) triplet formation and decay. (Author/JN)

Combined radiation damage, annealing, and ageing studies of InGaAsP /InP 1310 nm lasers for the CMS tracker optical links

CERN Document Server

Gill, K; Troska, Jan K; Vasey, F

2002-01-01

A summary is presented of the combined effects of radiation damage, accelerated annealing and accelerated ageing in 1310 nm InGaAsP/InP multi-quantum-well lasers, the type chosen for use in the CMS Tracker optical links. The radiation damage effects are compared for a variety of radiation sources: /sup 60/Co-gamma, 0.8 MeV (average energy) neutrons, 20 MeV (average energy) neutrons and 300 MeV/c pions that represent important parts of the spectrum of particles that will be encountered in the CMS Tracker. The relative damage factors of the various sources are calculated by comparing the laser threshold current increase due to radiation damage giving approximately=0 : 0.12 : 0.53 : 1 for /sup 60/Co-gamma, approximately =0.8 MeV neutrons, approximately=20 MeV neutrons with respect to 300 MeV/c pions. The effects of bias current and temperature on the annealing were measured and, in all cases, the annealing is proportional to log(annealing time). A bias current of 60 mA increases the annealing, in terms of the ti...

Necessary conditions for the homogeneous formation of a volume avalanche discharge with specific applications to rare gas-halide excimer laser discharges

International Nuclear Information System (INIS)

Levatter, J.I.

1979-01-01

Self-sustained/avalanche discharges are an efficient method of rare gas-halide excimer laser excitation in small systems. However, with the exceptions of the work reported here, experiments attempting to increase the laser energy output by scaling up the discharge volume and/or pulse duration have not been successful. The major problem encountered in scaling experiments has been the formation of arc channels in the discharge volume. The presence of arcing can totally disrupt proper laser operation. This problem stems from a general lack of understanding of high pressure avalanche discharge phenomena. Therefore, clarifying the basic discharge formation process and establishing a set of criteria under which a homogeneous avalanche discharge can be obtained is of central importance in defining the scaling limits of avalanche discharge lasers. The work presented here reviews the phenomena involved in high E/n (electric field to gas number density ratio) breakdown and its relationship to the formation of spatially homogeneous discharges. This relationship was first explored by A.J. Palmer in 1974. The basic requirement of his model was that the preionization density be large enough to cause an appreciable overlap of the primary electron avalanches and hence smooth out the ensuing space-charge fields to the extent that individual streamer formation would be prevented. This is the same basic model used in the more detailed discharge formation analysis developed here except that the effects of a time varying electric field caused by a finite voltage rise time and the effects due to the various electrochemical properties of the gas mixture are property taken into consideration

Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Gupta, Pranav; Dutta, Titas; Mal, Siddhartha; Narayan, Jagdish [Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606 (United States)

2012-01-01

We report the systematic changes in structural, electrical, and optical properties of NiO thin films on c-sapphire introduced by nanosecond ultraviolet excimer laser pulses. Epitaxial nature of as deposited NiO was determined by x-ray diffraction phi scans and transmission electron microscopy (TEM) and it was established that NiO film growth takes place with twin domains on sapphire where two types of domains have 60 deg. in-plane rotation with respect to each other about the [111] growth direction. We determined that at pulsed laser energy density of 0.275 J/cm{sup 2}, NiO films exhibited conversion from p-type semiconducting to n-type conductive behavior with three orders of magnitude decrease in resistivity, while maintaining its cubic crystal structure and good epitaxial relationship. Our TEM and electron-energy-loss spectroscopy studies conclusively ruled out the presence of any Ni clustering or precipitation due to the laser treatment. The laser-induced n-type carrier transport and conductivity enhancement were shown to be reversible through subsequent thermal annealing in oxygen. This change in conductivity behavior was correlated with the nonequilibrium concentration of laser induced Ni{sup 0}-like defect states.

Phase selection during pulsed laser annealing of Fe-V alloys

International Nuclear Information System (INIS)

Perepezko, J.H.; Follstaedt, D.M.; Peercy, P.S.

1987-01-01

Pulsed laser melting of the low-temperature σ (tetragonal, D8/sub b/) phase has been used to generate a liquid undercooled with respect to the melting point of the higher-temperature, equilibrium α (bcc) solid solution in equiatomic Fe-V alloys. From calculations based on reported thermodynamic data and equilibrium transformation temperatures, the metastable melting point of the σ phase is about 1720 K for an Fe-50 at.% V alloy, which is 54 K below the melting temperature of the α phase. During rapid heating of well-annealed σ-phase material with a 30 ns laser pulse to above melt threshold, the σ → α reaction is suppressed, so that the melt zone is undercooled by -- 54 K with respect to the equilibrium α phase. The α phase nucleates from the undercooled molten surface layer and is retained during the subsequent rapid cooling (-- 10/sup 10/ K/s) because of the relatively sluggish α → σ transformation. X-ray diffraction (Read camera) and TEM identified the σ phase in the near-surface after melting σ with incident laser energies (1.0-1.41 J/cm/sup 2/) which are well above the melt threshold as determined by changes in reflectivity (-- 0.7 J/cm/sup 2/). The α phase nucleated from the undercooled liquid within -- 20 ns

Decontamination by excimer laser

International Nuclear Information System (INIS)

2001-01-01

The process developed in collaboration with the C.N.R.S. has reached the industrial stage. The transport by optical fibre beam has been perfected and allows to work from a distance of 20 m from the source. Demonstration has been made with a laser of a 500 watt power which allows a 5 to 10 m 2 /hour etching efficiency. This process is in the course of qualification in collaboration with the different organisations: C.E.A., COGEMA and E.D.F. This qualification concerns 25 different materials and zircaloy fuel claddings. (author)

Effect of UV laser irradiation on tissue

International Nuclear Information System (INIS)

Nakayama, Takeyoshi; Kubo, Uichi

1992-01-01

Laser-tissue interactions have been investigated through Electron Probe Micro Analysis (EPMA), UV-visible optical absorption and Fourier Transform Infrared Spectroscopy (FTIR). Three excimer lasers, ArF, KrF and XeCl, were used to irradiate tissue; cow thighbone and gelatin thin film. Features of UV laser irradiation are described. (author)

Annealing of KDP crystals in vacuum and under pressure

International Nuclear Information System (INIS)

Pritula, I.M.; Kolybayeva, M.I.; Salo, V.I.

1997-01-01

The effect of the high temperature annealing (T an > 230 degrees C) on the absorption spectra and laser damage threshold of KDP crystals was studied in the present paper. The experiments on isotermal annealing were performed under pressure in the atmosphere with specific properties. The composition of the atmosphere was selected to be chose to that of the desorbing gas component determined during annealing in vacuum. The mentioned conditions allowed to conduct annealing in the temperature range of 230 - 280 degrees C without degradation of the sample. The variations in the absorption spectra showed that the effect of the annealing is most strongly revealed in the short - wave region of the spectrum (λ -1 before and k=0.12 cm -1 after annealing) demonstrate that at temperatures ∼ 230 - 280 degrees C the processes ensuring the improvement of the structure quality are stimulated in the volume of the crystals: (a) before the annealing laser damage threshold was 1.5 10 11 W/cm 2 ; (b) after the annealing (t = 280 degrees C) it became 4 10 11 W/cm 2

Pulsed UV laser technologies for ophthalmic surgery

International Nuclear Information System (INIS)

Razhev, A M; Bagayev, S N; Churkin, D S; Kargapol’tsev, E S; Chernykh, V V; Iskakov, I A; Ermakova, O V

2017-01-01

The paper provides an overview of the results of multiyear joint researches of team of collaborators of Institute of Laser Physics SB RAS together with NF IRTC “Eye Microsurgery” for the period from 1988 to the present, in which were first proposed and experimentally realized laser medical technologies for correction of refractive errors of known today as LASIK, the treatment of ophthalmic herpes and open-angle glaucoma. It is proposed to carry out operations for the correction of refractive errors the use of UV excimer KrCl laser with a wavelength of 222 nm. The same laser emission is the most suitable for the treatment of ophthalmic herpes, because it has a high clinical effect, combined with many years of absence of recrudescence. A minimally invasive technique of glaucoma operations using excimer XeCl laser (λ=308 nm) is developed. Its wavelength allows perform all stages of glaucoma operations, while the laser head itself has high stability and lifetime, will significantly reduce operating costs, compared with other types of lasers. (paper)

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

Energy Technology Data Exchange (ETDEWEB)

Siraj, K., E-mail: khurram.uet@gmail.com [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z. [Advance Physics Laboratory, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Naseem, S.; Riaz, S. [Center for Solid State Physics, University of Punjab, Lahore (Pakistan)

2011-05-15

Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

Pulsed laser deposition and characterization of multilayer metal-carbon thin films

International Nuclear Information System (INIS)

Siraj, K.; Khaleeq-ur-Rahman, M.; Rafique, M.S.; Munawar, M.Z.; Naseem, S.; Riaz, S.

2011-01-01

Cobalt-DLC multilayer films were deposited with increasing content of cobalt, keeping carbon content constant by pulsed laser deposition technique. A cobalt free carbon film was also deposited for comparison. Excimer laser was employed to ablate the materials onto silicon substrate, kept at 250 deg. C, while post-deposition annealing at 400 deg. C was also performed in situ. The formation of cobalt grains within the carbon matrix in Co-DLC films can be seen through scanning electron and atomic force micrographs while no grains on the surface of the cobalt-free DLC film were observed. Raman spectra of all the films show D- and G-bands, which is a confirmation that the films are DLC in nature. According to Vibrating sample magnetometer (VSM) measurements, the DLC films with cobalt revealed ferromagnetic behaviour whereas the cobalt free DLC film exhibited diamagnetic behaviour. The pure DLC film also shows ferromagnetic nature when diamagnetic background is subtracted. Spectroscopic Ellipsometry (SE) analysis showed that the optical band gaps, refractive indices and extinction coefficients of Co-DLC films can be effectively tuned with increasing content of cobalt.

FY 1997 report on the study on cryogenic aggregate target PLD process by multi-laser excitation for using gaseous materials; 1997 nendo chosa hokokusho (kitai genryo riyo no tame no taju laser reiki ni yoru gokuteion gyoshutai target PLD process ni kansuru kenkyu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

This paper reports the result in fiscal 1995 of the study on PLD (pulse laser deposition) thin film formation process having been made since 1993. In fiscal 1995, the effect of irradiation of excimer laser and YGA(SHG) on ablation of aggregates of N2, CH4, Ar, Kr and Xe, and the effect of time-delayed irradiation of YGA(SHG) and KrF excimer laser on ablation of N2 aggregate were studied aiming at exciting ablation by cryogenic aggregate alone. Experimental results by a newly developed multi-laser excitation experiment equipment are as follows. Ablation was not caused by KrF excimer laser irradiation, while caused by YGA(SHG) irradiation. Ablation was caused by 1mm thick N2 or CH4 aggregate alone. Kr target was the most promising among rare gas solid targets expected as seed of ablation occurrence. Multi-irradiation showed a different ablation behavior as compared with single YGA(SHG) irradiation, and in some cases, multi-irradiation not increased scattering of particles. Time-delayed multi- irradiation (YGA(SHG) excitation after excimer excitation) was effective. 23 figs., 4 tabs.

LASEK for the correction of hyperopia with mitomycin C using SCHWIND AMARIS excimer laser: one-year follow-up

Directory of Open Access Journals (Sweden)

Khosrow Jadidi

2015-11-01

Full Text Available AIM: To evaluate the efficacy, safety and predictability of laser-assisted sub-epithelial keratectomy(LASEKfor the correction of hyperopia using the SCHWIND AMARIS platform.METHODS: This retrospective single-surgeon study includes 66 eyes of 33 patients with hyperopia who underwent LASEK with mitomycin C(MMC. The median age of patients was 35.42±1.12y(ranging 18 to 56y. In each patient LASEK was performed using SCHWIND AMARIS excimer laser. Postoperatively clinical outcomes were evaluated in terms of predictability, safety, efficacy, subjective and objective refractions, uncorrected visual acuity(UCVA, best spectacle-corrected visual acuity(BSCVAand adverse events. RESULTS: The mean baseline refraction was 3.2±1.6 diopters(D(ranging 0 to 7 D. The mean pre-operative and postoperative spherical equivalent(SEwere 2.34±1.76(ranging -1.25 to 7 Dand 0.30±0.84(ranging -0.2 to 0.8 Drespectively(P=0.001. The mean hyperopia was 0.63±0.84 D(ranging -1.75 to 2.76 D6 to 12mo postoperatively. Likewise, the mean astigmatism was 0.68±0.43 D(range 0 to 2 Dwith 51(77.3%and 15(22.7%eyes within ±1 and ±0.50 D respectively. The safety index and efficacy index were 1.08 and 1.6 respectively.CONCLUSION:LASEK using SCHWIND AMARIS with MMC yields good visual and refractive results for hyperopia. Moreover, there were no serious complications.

Lasers '90: Proceedings of the 13th International Conference on Lasers and Applications, San Diego, CA, Dec. 10-14, 1990

International Nuclear Information System (INIS)

Harris, D.G.; Herbelin, J.

1991-01-01

The general topics considered are: x-ray lasers; FELs; solid state lasers; techniques and phenomena of ultrafast lasers; optical filters and free space laser communications; discharge lasers; tunable lasers; applications of lasers in medicine and surgery; lasers in materials processing; high power lasers; dynamics gratings, wave mixing, and holography; up-conversion lasers; lidar and laser radar; laser resonators; excimer lasers; laser propagation; nonlinear and quantum optics; blue-green technology; imaging; laser spectroscopy; chemical lasers; dye lasers; and lasers in chemistry

Microencapsulation of silicon cavities using a pulsed excimer laser

KAUST Repository

Sedky, Sherif M.; Tawfik, Hani H.; Ashour, Mohamed; Graham, Andrew B.; Provine, John W.; Wang, Qingxiao; Zhang, Xixiang; Howe, Roger T.

2012-01-01

This work presents a novel low thermal-budget technique for sealing micromachined cavities in silicon. Cavities are sealed without deposition, similar to the silicon surface-migration sealing process. In contrast to the 1100°C furnace anneal

Excimer laser phototherapeutic keratectomy in conjunction with mitomycin C in corneal macular and granular dystrophies.

Science.gov (United States)

Yuksel, Erdem; Cubuk, Mehmet Ozgur; Eroglu, Hulya Yazıcı; Bilgihan, Kamil

2016-04-01

To evaluate the visual outcomes, recurrence patterns, safety, and efficacy of excimer laser phototherapeutic keratectomy (PTK) in conjunction with mitomycin C (MMC) for corneal macular and granular diystrophies. The patients were divided into two groups. Group 1 included patients with macular corneal dystrophy (MCD) that caused superficial corneal plaque opacities, and Group 2 included patients with granular corneal dystrophy (GCD). Patients in both groups were pre-, peri-, and postoperatively evaluated. The groups were compared in terms of uncorrected visual acuity (VA), best spectacle-corrected VA, presence of mild or significant recurrence, and time of recurrence. Eighteen eyes (nine with MCD and nine with GCD) of 18 patients (10 men and eight women) were included. PTK was performed for each eye that was included in this study. The mean ablation amount was 117.8 ± 24.4 µm and 83.5 ± 45.7 µm in MCD and GCD, respectively, (p=0.18). The postoperative improvement of the mean VA was similar between the two groups before recurrences (p>0.43) and after recurrences (p>0.71). There were no statistically significant differences in the recurrence rate and the recurrence-free period for any recurrence type. PTK was an effective, safe, and minimally invasive procedure for patients with MCD and GCD. PTK in conjunction with MMC was similarly effective for both groups in terms of recurrence and visual outcomes.

Improvement in the electronic quality of pulsed laser deposited CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films via post-deposition elemental sulfur annealing process

Energy Technology Data Exchange (ETDEWEB)

Beres, M., E-mail: matthewcberes@gmail.com [University of California, Department of Mechanical Engineering, 6141 Etcheverry Hall, Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); Yu, K.M., E-mail: kinmanyu@cityu.edu.hk [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); City University of Hong Kong, Department of Physics and Materials Science, 83 Tat Chee Avenue, Kowloon, Hong Kong Special Administrative Region (Hong Kong); Syzdek, J., E-mail: jego.mejl@gmail.com [Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States); Bio-Logic USA, 9050 Executive Park Dr NW, Knoxville, TN 37923 (United States); Mao, S.S., E-mail: ssmao@me.berkeley.edu [University of California, Department of Mechanical Engineering, 6141 Etcheverry Hall, Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States)

2016-06-01

We synthesized CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} thin films on soda lime glass substrates using pulsed laser deposition and post-annealing under different conditions. Increasing substrate temperature during deposition and vacuum annealing after deposition both increased grain size but had negligible effect on the electronic properties of the films. As-deposited films demonstrated P-type conductivities with high carrier concentrations and low Hall mobilities, but annealing in elemental sulfur environment significantly improved the electronic properties of the films. We found that the incorporation of even small quantities of sulfur into the films reduced carrier concentrations by over three orders of magnitude and increased Hall mobilities by an order of magnitude. This resulted in films with resistivity ~ 5 Ω·cm suitable for photovoltaic applications. - Highlights: • CIGSe thin films were deposited by pulsed laser deposition. • Laser deposition parameters and annealing parameters were investigated. • As-deposited films demonstrated high hole concentrations and low Hall mobilities. • Elemental sulfur annealing significantly enhanced the electronic quality of films.

Phenylethynylpyrene excimer forming hybridization probes for fluorescence SNP detection

DEFF Research Database (Denmark)

Prokhorenko, Igor A.; Astakhova, Irina V.; Momynaliev, Kuvat T.

2009-01-01

Excimer formation is a unique feature of some fluorescent dyes (e.g., pyrene) which can be used for probing the proximity of biomolecules. Pyrene excimer fluorescence has previously been used for homogeneous detection of single nucleotide polymorphism (SNP) on DNA. 1-Phenylethynylpyrene (1-1-PEPy...

The effect of residual thermal stresses on the fatigue crack growth of laser-surface-annealed AISI 304 stainless steel Part I: computer simulation

International Nuclear Information System (INIS)

Shiue, R.K.; Chang, C.T.; Young, M.C.; Tsay, L.W.

2004-01-01

The effect of residual thermal stresses on the fatigue crack growth of the laser-surface-annealed AISI 304 stainless steel, especially the effect of stress redistribution ahead of the crack tip was extensively evaluated in the study. Based on the finite element simulation, the longitudinal residual tensile stress field has a width of roughly 20 mm on the laser-irradiated surface and was symmetric with respect to the centerline of the laser-annealed zone (LAZ). Meanwhile, residual compressive stresses distributed over a wide region away from the LAZ. After introducing a notch perpendicular to the LAZ, the distribution of longitudinal residual stresses became unsymmetrical about the centerline of LAZ. High residual compressive stresses exist within a narrow range ahead of notch tip. The improved crack growth resistance of the laser-annealed specimen might be attributed to those induced compressive stresses. As the notch tip passed through the centerline of the LAZ, the residual stress ahead of the notch tip was completely reverted into residual tensile stresses. The existence of unanimous residual tensile stresses ahead of the notch tip was maintained, even if the notch tip extended deeply into the LAZ. Additionally, the presence of the residual tensile stress ahead of the notch tip did not accelerate the fatigue crack growth rate in the compact tension specimen

Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films

NARCIS (Netherlands)

Scorticati, D.; Illiberi, A.; Bor, Teunis Cornelis; Eijt, S.W.H.; Schut, H.; Römer, Gerardus Richardus, Bernardus, Engelina; Klein Gunnewiek, Michel; Lenferink, Aufrid T.M.; Kniknie, B.; Joy, R.M.; Dorenkamper, M.S.; de Lange, D.F.; Otto, Cornelis; Borsa, D.; Soppe, W.J.; Huis in 't Veld, Bert

2015-01-01

Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400–1000 nm range did not change significantly. We studied the

Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films

NARCIS (Netherlands)

Scorticati, D.; Illiberi, A.; Bor, T.C.; Eijt, S.W.H.; Schut, H.; Römer, G.R.B.E.; Klein Gunnewiek, M.; Lenferink, A.T.M.; Kniknie, B.J.; Mary Joy, R.; Dorenkamper, M.S.; Lange, D.F. de; Otto, C.; Borsa, D.; Soppe, W.J.; Huis in 't Veld, A.J.

2015-01-01

Abstract Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400-1000 nm range did not change significantly. We studied the

[Reduction of decentration after LASIK using a modified eye tracker ring for the MEL-70 excimer laser].

Science.gov (United States)

Schulze, S; Nietgen, G; Sekundo, W

2004-07-01

The aim of this study was to determine and compare the rate of eccentric laser ablation after LASIK depending on the eye tracker ring used. All LASIK treatments were carried out using the MEL-70 flying spot excimer laser (Zeiss-Meditec, Jena). The flap was produced using a Corneal Shaper trade mark or Hansatome trade mark Microkeratome (B and L Surgical, Heidelberg). Initially we used an 11 mm eye tracker ring without hinge protector. At the end of February 2001 this ring was replaced by a 10 mm and a 9.5 mm ring with built-in hinge protector. An additional modification was introduced by us: at 1 mm separations little teeth-like spikes were engraved into the eyeward side of the ring, thus stabilising the position of the ring on the globe and allowing free liquid to flow through the spaces between each spike. The built-in calibration system of the corneal topography (TMS 3, Tomey, Erlangen) from patients with a follow-up of one month or longer was used to determine the distance between the centre of the ablation zone from the fixation point. In group I patients (old ring) 42 eyes were treated. In 4 eyes ablation was perfect, in 21 eyes the ablation centre was located 0.1 to 0.49 mm from the fixation point, in 11 eyes 0.51 to 0.99 mm and in 5 eyes 1.1 to 1.49 mm whereas one eye showed a decentred ablation of 1.53 mm. In group II (new ring) 42 eyes were investigated also. In 11 eyes ablation was perfect, in 20 eyes the ablation centre was located 0.1 to 0.49 mm from the fixation point, in 10 eyes 0.5 to 0.99 mm and one eye had an eccentric ablation of 1.28 mm from the fixation point. The further development of our eye tracker ring for the MEL-70 laser considerably reduced the rate of decentred ablations. An enhanced grip of the ring onto the globe reduces a slow slide during the laser procedure.

Implantation annealing in GaAs by incoherent light

International Nuclear Information System (INIS)

Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

1983-01-01

Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

Identification of photoacoustic transients during pulsed laser ablation of the human temporal bone: an experimental model.

Science.gov (United States)

Wong, B J; Dickinson, M R; Berns, M W; Neev, J

1996-12-01

Laser ablation of hard tissues during neurotologic operations has been accomplished with continuous-wave (CW) lasers in the visible and midinfrared spectrum. The mechanism of ablation at these wavelengths is secondary to photothermal-induced tissue destruction. As a result, significant thermal damage to surrounding tissue may occur. Pulsed ultraviolet (UV) lasers have been suggested as an alternative to the argon, KTP-532, and CO2 lasers currently used in clinical practice. The pulse length of Excimer lasers are considerably shorter than the thermal diffusion time of bone tissue, and as a consequence thermal injury is minimal. This makes pulsed lasers an attractive tool for tissue ablation in the ear: in essence a "cold knife." However, the short pulse width of Excimer lasers (typically 10-150 ns) can create large thermoelastic stresses in the ablation specimen. This study identifies the presence of these photoacoustic waves during the Excimer laser treatment of the cadaveric human temporal bone. A XeCl (lambda = 308 nm, tau p = 12 ns) excimer laser was used to ablate hard tissue surrounding the oval window and facial ridge with energies of 75, 45, 25, and 12 mJ/pulse. Spot size was estimated to be 0.5 mm2. Custom high-frequency polyvinyldifluoride (PVDF) piezoelectric film transducers were fabricated and attached to the promontory, round window niche, and facial ridges. The signals were amplified using a low-noise preamplifier and recorded on a digitizing oscilloscope. Photoacoustic waves were clearly identified. Notably, large acoustic waves were measured on the promontory and on both sides of the facial ridge. The implications and clinical relevance of these findings is discussed and compared to findings obtained from a model system.

Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.

Science.gov (United States)

Wu, Chien-Hung; Chang, Kow-Ming; Chen, Yi-Ming; Huang, Bo-Wen; Zhang, Yu-Xin; Wang, Shui-Jinn

2018-03-01

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm2 laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7×107, high channel mobility of 10 cm2/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.